Nonlinear quantum Rabi model in trapped ions

NASA Astrophysics Data System (ADS)

Cheng, Xiao-Hang; Arrazola, Iñigo; Pedernales, Julen S.; Lamata, Lucas; Chen, Xi; Solano, Enrique

2018-02-01

We study the nonlinear dynamics of trapped-ion models far away from the Lamb-Dicke regime. This nonlinearity induces a blockade on the propagation of quantum information along the Hilbert space of the Jaynes-Cummings and quantum Rabi models. We propose to use this blockade as a resource for the dissipative generation of high-number Fock states. Also, we compare the linear and nonlinear cases of the quantum Rabi model in the ultrastrong and deep strong-coupling regimes. Moreover, we propose a scheme to simulate the nonlinear quantum Rabi model in all coupling regimes. This can be done via off-resonant nonlinear red- and blue-sideband interactions in a single trapped ion, yielding applications as a dynamical quantum filter.

Efficiency at Maximum Power Output of a Quantum-Mechanical Brayton Cycle

NASA Astrophysics Data System (ADS)

Yuan, Yuan; He, Ji-Zhou; Gao, Yong; Wang, Jian-Hui

2014-03-01

The performance in finite time of a quantum-mechanical Brayton engine cycle is discussed, without introduction of temperature. The engine model consists of two quantum isoenergetic and two quantum isobaric processes, and works with a single particle in a harmonic trap. Directly employing the finite-time thermodynamics, the efficiency at maximum power output is determined. Extending the harmonic trap to a power-law trap, we find that the efficiency at maximum power is independent of any parameter involved in the model, but depends on the confinement of the trapping potential.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herbrych, Jacek W.; Feiguin, Adrian E.; Dagotto, Elbio R.

Here, we present a time-dependent density-matrix renormalization group investigation of the quantum distillation process within the Fermi-Hubbard model on a quasi-one-dimensional ladder geometry. The term distillation refers to the dynamical, spatial separation of singlons and doublons in the sudden expansion of interacting particles in an optical lattice, i.e., the release of a cloud of atoms from a trapping potential. Remarkably, quantum distillation can lead to a contraction of the doublon cloud, resulting in an increased density of the doublons in the core region compared to the initial state. As a main result, we show that this phenomenon is not limitedmore » to chains that were previously studied. Interestingly, there are additional dynamical processes on the two-leg ladder such as density oscillations and self-trapping of defects that lead to a less efficient distillation process. An investigation of the time evolution starting from product states provides an explanation for this behavior. Initial product states are also considered since in optical lattice experiments, such states are often used as the initial setup. We propose configurations that lead to a fast and efficient quantum distillation.« less

Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochkareva, N. I.; Sheremet, I. A.; Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru

2016-10-15

Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes with InGaN/GaN quantum wells are analyzed. The results of this analysis demonstrate that the wide tail of defect states in the band gap of GaN facilitates the trap-assisted tunneling of thermally activated carriers into the quantum well, but simultaneously leads to a decrease in the nonradiative-recombination lifetime and to an efficiency droop as the quasi-Fermi levels intersect the defect states with increasing forward bias. The results reveal the dominant role of hydrogen in the recombination activity of defects with danglingmore » bonds and in the efficiency of GaN-based devices.« less

All-optical coherent population trapping with defect spin ensembles in silicon carbide.

PubMed

Zwier, Olger V; O'Shea, Danny; Onur, Alexander R; van der Wal, Caspar H

2015-06-05

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.

Density of Trap States and Auger-mediated Electron Trapping in CdTe Quantum-Dot Solids.

PubMed

Boehme, Simon C; Azpiroz, Jon Mikel; Aulin, Yaroslav V; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Infante, Ivan; Houtepen, Arjan J

2015-05-13

Charge trapping is an ubiquitous process in colloidal quantum-dot solids and a major limitation to the efficiency of quantum dot based devices such as solar cells, LEDs, and thermoelectrics. Although empirical approaches led to a reduction of trapping and thereby efficiency enhancements, the exact chemical nature of the trapping mechanism remains largely unidentified. In this study, we determine the density of trap states in CdTe quantum-dot solids both experimentally, using a combination of electrochemical control of the Fermi level with ultrafast transient absorption and time-resolved photoluminescence spectroscopy, and theoretically, via density functional theory calculations. We find a high density of very efficient electron traps centered ∼0.42 eV above the valence band. Electrochemical filling of these traps increases the electron lifetime and the photoluminescence quantum yield by more than an order of magnitude. The trapping rate constant for holes is an order of magnitude lower that for electrons. These observations can be explained by Auger-mediated electron trapping. From density functional theory calculations we infer that the traps are formed by dicoordinated Te atoms at the quantum dot surface. The combination of our unique experimental determination of the density of trap states with the theoretical modeling of the quantum dot surface allows us to identify the trapping mechanism and chemical reaction at play during charge trapping in these quantum dots.

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

NASA Astrophysics Data System (ADS)

Kondratenko, S. V.; Iliash, S. A.; Mazur, Yu I.; Kunets, V. P.; Benamara, M.; Salamo, G. J.

2017-09-01

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

Towards Quantum Simulation with Circular Rydberg Atoms

NASA Astrophysics Data System (ADS)

Nguyen, T. L.; Raimond, J. M.; Sayrin, C.; Cortiñas, R.; Cantat-Moltrecht, T.; Assemat, F.; Dotsenko, I.; Gleyzes, S.; Haroche, S.; Roux, G.; Jolicoeur, Th.; Brune, M.

2018-01-01

The main objective of quantum simulation is an in-depth understanding of many-body physics, which is important for fundamental issues (quantum phase transitions, transport, …) and for the development of innovative materials. Analytic approaches to many-body systems are limited, and the huge size of their Hilbert space makes numerical simulations on classical computers intractable. A quantum simulator avoids these limitations by transcribing the system of interest into another, with the same dynamics but with interaction parameters under control and with experimental access to all relevant observables. Quantum simulation of spin systems is being explored with trapped ions, neutral atoms, and superconducting devices. We propose here a new paradigm for quantum simulation of spin-1 /2 arrays, providing unprecedented flexibility and allowing one to explore domains beyond the reach of other platforms. It is based on laser-trapped circular Rydberg atoms. Their long intrinsic lifetimes, combined with the inhibition of their microwave spontaneous emission and their low sensitivity to collisions and photoionization, make trapping lifetimes in the minute range realistic with state-of-the-art techniques. Ultracold defect-free circular atom chains can be prepared by a variant of the evaporative cooling method. This method also leads to the detection of arbitrary spin observables with single-site resolution. The proposed simulator realizes an X X Z spin-1 /2 Hamiltonian with nearest-neighbor couplings ranging from a few to tens of kilohertz. All the model parameters can be dynamically tuned at will, making a large range of simulations accessible. The system evolution can be followed over times in the range of seconds, long enough to be relevant for ground-state adiabatic preparation and for the study of thermalization, disorder, or Floquet time crystals. The proposed platform already presents unrivaled features for quantum simulation of regular spin chains. We discuss extensions towards more general quantum simulations of interacting spin systems with full control on individual interactions.

``Flash'' synthesis of ``giant'' Mn-doped CdS/ZnSe/ZnS nanocrystals with ZnSe layer as hole quantum-well

NASA Astrophysics Data System (ADS)

Xu, Ruilin; Zhang, Jiayu

Usually, exciton-Mn energy transfer in Mn-doped CdS/ZnS nanocrystals (NCs) can readily outcompete the exciton trapping by an order of magnitude. However, with the accumulation of non-radiative defects in the giant shell during the rapid growth of the thick shell (up to ~20 monolayers in no more than 10 minutes), the photoluminescence (PL) quantum yield of this kind of ``giant'' NCs is significantly reduced by the accumulation of non-radiative defects during the rapid growth of thick shell. That is because the exciton-Mn energy transfer in Mn-doped CdS/ZnS NCs is significantly inhibited by the hole trapping as the major competing process, resulting from the insufficient hole-confinement in CdS/ZnS NCs. Accordingly ``flash'' synthesis of giant Mn-doped CdS/ZnSe/ZnS NCs with ZnSe layer as hole quantum-well is developed to suppress the inhibition. Meanwhile Mn2+ PL peak changes profoundly from ~620 nm to ~540 nm after addition of ZnSe layer. Studies are under the way to explore the relevant mechanisms.

Tuning and Switching a Plasmonic Quantum Dot "Sandwich" in a Nematic Line Defect.

PubMed

Mundoor, Haridas; Sheetah, Ghadah H; Park, Sungoh; Ackerman, Paul J; Smalyukh, Ivan I; van de Lagemaat, Jao

2018-03-27

We study the quantum-mechanical effects arising in a single semiconductor core/shell quantum dot (QD) controllably sandwiched between two plasmonic nanorods. Control over the position and the "sandwich" confinement structure is achieved by the use of a linear-trap liquid crystal (LC) line defect and laser tweezers that "push" the sandwich together. This arrangement allows for the study of exciton-plasmon interactions in a single structure, unaltered by ensemble effects or the complexity of dielectric interfaces. We demonstrate the effect of plasmonic confinement on the photon antibunching behavior of the QD and its luminescence lifetime. The QD behaves as a single emitter when nanorods are far away from the QD but shows possible multiexciton emission and a significantly decreased lifetime when tightly confined in a plasmonic "sandwich". These findings demonstrate that LC defects, combined with laser tweezers, enable a versatile platform to study plasmonic coupling phenomena in a nanoscale laboratory, where all elements can be arranged almost at will.

Tuning and Switching a Plasmonic Quantum Dot “Sandwich” in a Nematic Line Defect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundoor, Haridas; Sheetah, Ghadah H.; Park, Sungoh

We study the quantum-mechanical effects arising in a single semiconductor core/shell quantum dot (QD) controllably sandwiched between two plasmonic nanorods. Control over the position and the 'sandwich' confinement structure is achieved by the use of a linear-trap liquid crystal (LC) line defect and laser tweezers that 'push' the sandwich together. This arrangement allows for the study of exciton-plasmon interactions in a single structure, unaltered by ensemble effects or the complexity of dielectric interfaces. We demonstrate the effect of plasmonic confinement on the photon antibunching behavior of the QD and its luminescence lifetime. The QD behaves as a single emitter whenmore » nanorods are far away from the QD but shows possible multiexciton emission and a significantly decreased lifetime when tightly confined in a plasmonic 'sandwich'. These findings demonstrate that LC defects, combined with laser tweezers, enable a versatile platform to study plasmonic coupling phenomena in a nanoscale laboratory, where all elements can be arranged almost at will.« less

Tuning and Switching a Plasmonic Quantum Dot “Sandwich” in a Nematic Line Defect

DOE PAGES

Mundoor, Haridas; Sheetah, Ghadah H.; Park, Sungoh; ...

2018-02-28

We study the quantum-mechanical effects arising in a single semiconductor core/shell quantum dot (QD) controllably sandwiched between two plasmonic nanorods. Control over the position and the 'sandwich' confinement structure is achieved by the use of a linear-trap liquid crystal (LC) line defect and laser tweezers that 'push' the sandwich together. This arrangement allows for the study of exciton-plasmon interactions in a single structure, unaltered by ensemble effects or the complexity of dielectric interfaces. We demonstrate the effect of plasmonic confinement on the photon antibunching behavior of the QD and its luminescence lifetime. The QD behaves as a single emitter whenmore » nanorods are far away from the QD but shows possible multiexciton emission and a significantly decreased lifetime when tightly confined in a plasmonic 'sandwich'. These findings demonstrate that LC defects, combined with laser tweezers, enable a versatile platform to study plasmonic coupling phenomena in a nanoscale laboratory, where all elements can be arranged almost at will.« less

From transistor to trapped-ion computers for quantum chemistry.

PubMed

Yung, M-H; Casanova, J; Mezzacapo, A; McClean, J; Lamata, L; Aspuru-Guzik, A; Solano, E

2014-01-07

Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology.

From transistor to trapped-ion computers for quantum chemistry

PubMed Central

Yung, M.-H.; Casanova, J.; Mezzacapo, A.; McClean, J.; Lamata, L.; Aspuru-Guzik, A.; Solano, E.

2014-01-01

Over the last few decades, quantum chemistry has progressed through the development of computational methods based on modern digital computers. However, these methods can hardly fulfill the exponentially-growing resource requirements when applied to large quantum systems. As pointed out by Feynman, this restriction is intrinsic to all computational models based on classical physics. Recently, the rapid advancement of trapped-ion technologies has opened new possibilities for quantum control and quantum simulations. Here, we present an efficient toolkit that exploits both the internal and motional degrees of freedom of trapped ions for solving problems in quantum chemistry, including molecular electronic structure, molecular dynamics, and vibronic coupling. We focus on applications that go beyond the capacity of classical computers, but may be realizable on state-of-the-art trapped-ion systems. These results allow us to envision a new paradigm of quantum chemistry that shifts from the current transistor to a near-future trapped-ion-based technology. PMID:24395054

Photoluminescence Dynamics of Aryl sp 3 Defect States in Single-Walled Carbon Nanotubes

DOE PAGES

Hartmann, Nicolai F.; Velizhanin, Kirill A.; Haroz, Erik H.; ...

2016-08-16

Photoluminescent defect states introduced by sp 3 functionalization of semiconducting carbon nanotubes are rapidly emerging as important routes for boosting emission quantum yields and introducing new functionality. Knowledge of the relaxation dynamics of these states is required for understanding how functionalizing agents (molecular dopants) may be designed to access specific behaviors. We measure photoluminescence (PL) decay dynamics of sp 3 defect states introduced by aryl functionalization of the carbon nanotube surface. Results are given for five different nanotube chiralities, each doped with a range of aryl functionality. We find the PL decays of these sp 3 defect states are biexponential,more » with both components relaxing on timescales of ~ 100 ps. Exciton trapping at defects is found to increases PL lifetimes by a factor of 5-10, in comparison to those for the free exciton. A significant chirality dependence is observed in the decay times, ranging from 77 ps for (7,5) nanotubes to > 600 ps for (5,4) structures. The strong correlation of time constants with emission energy indicates relaxation occurs via multiphonon decay processes, with close agreement to theoretical expectations. Variation of the aryl dopant further modulates decay times by 10-15%. The aryl defects also affect PL lifetimes of the free E 11 exciton. Shortening of the E 11 bright state lifetime as defect density increases provides further confirmation that defects act as exciton traps. A similar shortening of the E11 dark exciton lifetime is found as defect density increases, providing strong experimental evidence that dark excitons are also trapped at such defect sites.« less

Photoluminescence Dynamics of Aryl sp 3 Defect States in Single-Walled Carbon Nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hartmann, Nicolai F.; Velizhanin, Kirill A.; Haroz, Erik H.

Photoluminescent defect states introduced by sp 3 functionalization of semiconducting carbon nanotubes are rapidly emerging as important routes for boosting emission quantum yields and introducing new functionality. Knowledge of the relaxation dynamics of these states is required for understanding how functionalizing agents (molecular dopants) may be designed to access specific behaviors. We measure photoluminescence (PL) decay dynamics of sp 3 defect states introduced by aryl functionalization of the carbon nanotube surface. Results are given for five different nanotube chiralities, each doped with a range of aryl functionality. We find the PL decays of these sp 3 defect states are biexponential,more » with both components relaxing on timescales of ~ 100 ps. Exciton trapping at defects is found to increases PL lifetimes by a factor of 5-10, in comparison to those for the free exciton. A significant chirality dependence is observed in the decay times, ranging from 77 ps for (7,5) nanotubes to > 600 ps for (5,4) structures. The strong correlation of time constants with emission energy indicates relaxation occurs via multiphonon decay processes, with close agreement to theoretical expectations. Variation of the aryl dopant further modulates decay times by 10-15%. The aryl defects also affect PL lifetimes of the free E 11 exciton. Shortening of the E 11 bright state lifetime as defect density increases provides further confirmation that defects act as exciton traps. A similar shortening of the E11 dark exciton lifetime is found as defect density increases, providing strong experimental evidence that dark excitons are also trapped at such defect sites.« less

Experimental Preparation and Measurement of Quantum States of Motion of a Trapped Atom

DTIC Science & Technology

1997-01-01

trapped atom are quantum harmonic oscillators, their couplings to internal atomic levels (described by the Jaynes - Cummings model (JCM) [ l , 21) are... wave approximation in a frame rotating with WO, where hwo is the energy difference of the two internal levels, the interaction of the classical laser... Jaynes - Cummings model , the system is suited to realizing many proposals originally introduced in the realm of quantum optics and cavity quantum

Assessing the Progress of Trapped-Ion Processors Towards Fault-Tolerant Quantum Computation

NASA Astrophysics Data System (ADS)

Bermudez, A.; Xu, X.; Nigmatullin, R.; O'Gorman, J.; Negnevitsky, V.; Schindler, P.; Monz, T.; Poschinger, U. G.; Hempel, C.; Home, J.; Schmidt-Kaler, F.; Biercuk, M.; Blatt, R.; Benjamin, S.; Müller, M.

2017-10-01

A quantitative assessment of the progress of small prototype quantum processors towards fault-tolerant quantum computation is a problem of current interest in experimental and theoretical quantum information science. We introduce a necessary and fair criterion for quantum error correction (QEC), which must be achieved in the development of these quantum processors before their sizes are sufficiently big to consider the well-known QEC threshold. We apply this criterion to benchmark the ongoing effort in implementing QEC with topological color codes using trapped-ion quantum processors and, more importantly, to guide the future hardware developments that will be required in order to demonstrate beneficial QEC with small topological quantum codes. In doing so, we present a thorough description of a realistic trapped-ion toolbox for QEC and a physically motivated error model that goes beyond standard simplifications in the QEC literature. We focus on laser-based quantum gates realized in two-species trapped-ion crystals in high-optical aperture segmented traps. Our large-scale numerical analysis shows that, with the foreseen technological improvements described here, this platform is a very promising candidate for fault-tolerant quantum computation.

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

NASA Astrophysics Data System (ADS)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Quantum synchronization of quantum van der Pol oscillators with trapped ions.

PubMed

Lee, Tony E; Sadeghpour, H R

2013-12-06

The van der Pol oscillator is the prototypical self-sustained oscillator and has been used to model nonlinear behavior in biological and other classical processes. We investigate how quantum fluctuations affect phase locking of one or many van der Pol oscillators. We find that phase locking is much more robust in the quantum model than in the equivalent classical model. Trapped-ion experiments are ideally suited to simulate van der Pol oscillators in the quantum regime via sideband heating and cooling of motional modes. We provide realistic experimental parameters for 171Yb+ achievable with current technology.

Charge transport model in nanodielectric composites based on quantum tunneling mechanism and dual-level traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Guochang; Chen, George, E-mail: gc@ecs.soton.ac.uk, E-mail: sli@mail.xjtu.edu.cn; School of Electronic and Computer Science, University of Southampton, Southampton SO17 1BJ

Charge transport properties in nanodielectrics present different tendencies for different loading concentrations. The exact mechanisms that are responsible for charge transport in nanodielectrics are not detailed, especially for high loading concentration. A charge transport model in nanodielectrics has been proposed based on quantum tunneling mechanism and dual-level traps. In the model, the thermally assisted hopping (TAH) process for the shallow traps and the tunnelling process for the deep traps are considered. For different loading concentrations, the dominant charge transport mechanisms are different. The quantum tunneling mechanism plays a major role in determining the charge conduction in nanodielectrics with high loadingmore » concentrations. While for low loading concentrations, the thermal hopping mechanism will dominate the charge conduction process. The model can explain the observed conductivity property in nanodielectrics with different loading concentrations.« less

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunert, B.; Guo, W.; Mols, Y.

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an activemore » material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.« less

Atom-by-atom assembly of defect-free one-dimensional cold atom arrays.

PubMed

Endres, Manuel; Bernien, Hannes; Keesling, Alexander; Levine, Harry; Anschuetz, Eric R; Krajenbrink, Alexandre; Senko, Crystal; Vuletic, Vladan; Greiner, Markus; Lukin, Mikhail D

2016-11-25

The realization of large-scale fully controllable quantum systems is an exciting frontier in modern physical science. We use atom-by-atom assembly to implement a platform for the deterministic preparation of regular one-dimensional arrays of individually controlled cold atoms. In our approach, a measurement and feedback procedure eliminates the entropy associated with probabilistic trap occupation and results in defect-free arrays of more than 50 atoms in less than 400 milliseconds. The technique is based on fast, real-time control of 100 optical tweezers, which we use to arrange atoms in desired geometric patterns and to maintain these configurations by replacing lost atoms with surplus atoms from a reservoir. This bottom-up approach may enable controlled engineering of scalable many-body systems for quantum information processing, quantum simulations, and precision measurements. Copyright © 2016, American Association for the Advancement of Science.

Analog quantum simulation of generalized Dicke models in trapped ions

NASA Astrophysics Data System (ADS)

Aedo, Ibai; Lamata, Lucas

2018-04-01

We propose the analog quantum simulation of generalized Dicke models in trapped ions. By combining bicromatic laser interactions on multiple ions we can generate all regimes of light-matter coupling in these models, where here the light mode is mimicked by a motional mode. We present numerical simulations of the three-qubit Dicke model both in the weak field (WF) regime, where the Jaynes-Cummings behavior arises, and the ultrastrong coupling (USC) regime, where a rotating-wave approximation cannot be considered. We also simulate the two-qubit biased Dicke model in the WF and USC regimes and the two-qubit anisotropic Dicke model in the USC regime and the deep-strong coupling regime. The agreement between the mathematical models and the ion system convinces us that these quantum simulations can be implemented in the laboratory with current or near-future technology. This formalism establishes an avenue for the quantum simulation of many-spin Dicke models in trapped ions.

The Development of Spectroscopic Techniques to Study Defects in Thin Film Silicon-Dioxide

NASA Astrophysics Data System (ADS)

Zvanut, Mary Ellen

This dissertation research concerns the study of defects in thin film sputtered SiO_2 which is used as an optical coating material. The capacitance-voltage and current-voltage techniques typically used in microelectronics investigations were used to examine the concentration, location, and kinetics of charge in an aluminum-sputtered oxide-native oxide-silicon capacitor. The response of the capacitor to low field bias stress reveals a hysteretic trapping behavior similar to that observed in microelectronic grade oxide films. In an effort to understand this phenomenon, a band-to-trap tunneling model was developed based on the assumption that the defect involved exhibits a delta function spatial distribution and an extended energy distribution. The central feature of this model, defect relaxation, provides a physical explanation for the hysteretic trapping behavior. Analysis yields that the trap is located spatially within 2 nm of the Si/SiO _2 interface and energetically less than 5 eV from the SiO_2 conduction band edge. The relaxation energy associated with the capture of an electron at the trap is 0.1-2.2 eV. Correlation of the electrical measurements executed for this investigation with electron paramagnetic resonance (EPR) data obtained by Dr. P. Caplan provides structural information about the defect involved with the hysteretic trapping phenomenon. EPR results obtained before and after subjecting an oxide-silicon structure to corona discharge suggest that the trapping center is an E^ ' defect. The technique of band-to-trap tunneling spectroscopy combined with the EPR experiments provides the first reported trap depth associated with the capture of a hole at an E^' center located near the silicon surface of an oxide/silicon system.

Experimental realization of quantum teleportation from a photon to the vibration modes of a millimeter-sized diamond

NASA Astrophysics Data System (ADS)

Huang, Yuanyuan; Hou, Panyu; Yuan, Xinxing; Chang, Xiuying; Zu, Chong; He, Li; Duan, Luming; CenterQuantum Information, IIIS, Tsinghua University, Beijing 100084, PR China Team; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA Team

2016-05-01

Quantum teleportation is of great importance to various quantum technologies, and has been realized between light beams, trapped atoms, superconducting qubits, and defect spins in solids. Here we report an experimental demonstration of quantum teleportation from light beams to vibrational states of a macroscopic diamond under ambient conditions. In our experiment, the ultrafast laser technology provides the key tool for fast processing and detection of quantum states within its short life time in macroscopic objects consisting of many strongly interacting atoms that are coupled to the environment, and finally we demonstrate an average teleportation fidelity (90 . 6 +/- 1 . 0) % , clearly exceeding the classical limit of 2/3. Quantum control of the optomechanical coupling may provide efficient ways for realization of transduction of quantum signals, processing of quantum information, and sensing of small mechanical vibrations. Center for Quantum Information, IIIS, Tsinghua University, Beijing 100084, PR China.

Hydrogen behaviour at twist {110} grain boundaries in α-Fe

NASA Astrophysics Data System (ADS)

McEniry, Eunan J.; Hickel, Tilmann; Neugebauer, Jörg

2017-06-01

The behaviour of hydrogen at structural defects such as grain boundaries plays a critical role in the phenomenon of hydrogen embrittlement. However, characterization of the energetics and diffusion of hydrogen in the vicinity of such extended defects using conventional ab initio techniques is challenging due to the relatively large system sizes required when dealing with realistic grain boundary geometries. In order to be able to access the required system sizes, as well as high-throughput testing of a large number of configurations, while remaining within a quantum-mechanical framework, an environmental tight-binding model for the iron-hydrogen system has been developed. The resulting model is applied to study the behaviour of hydrogen at a class of low-energy {110}-terminated twist grain boundaries in α-Fe. We find that, for particular Σ values within the coincidence site lattice description, the atomic geometry at the interface plane provides extremely favourable trap sites for H, which also possess high escape barriers for diffusion. By contrast, via simulated tensile testing, weakly trapped hydrogen at the interface plane of the bulk-like Σ3 boundary acts as a `glue' for the boundary, increasing both the energetic barrier and the elongation to rupture. This article is part of the themed issue 'The challenges of hydrogen and metals'.

Hydrogen behaviour at twist {110} grain boundaries in α-Fe.

PubMed

McEniry, Eunan J; Hickel, Tilmann; Neugebauer, Jörg

2017-07-28

The behaviour of hydrogen at structural defects such as grain boundaries plays a critical role in the phenomenon of hydrogen embrittlement. However, characterization of the energetics and diffusion of hydrogen in the vicinity of such extended defects using conventional ab initio techniques is challenging due to the relatively large system sizes required when dealing with realistic grain boundary geometries. In order to be able to access the required system sizes, as well as high-throughput testing of a large number of configurations, while remaining within a quantum-mechanical framework, an environmental tight-binding model for the iron-hydrogen system has been developed. The resulting model is applied to study the behaviour of hydrogen at a class of low-energy {110}-terminated twist grain boundaries in α -Fe. We find that, for particular Σ values within the coincidence site lattice description, the atomic geometry at the interface plane provides extremely favourable trap sites for H, which also possess high escape barriers for diffusion. By contrast, via simulated tensile testing, weakly trapped hydrogen at the interface plane of the bulk-like Σ3 boundary acts as a 'glue' for the boundary, increasing both the energetic barrier and the elongation to rupture.This article is part of the themed issue 'The challenges of hydrogen and metals'. © 2017 The Author(s).

Electrical and optical characterizations of InAs/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young

2018-03-01

The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.

Less severe processing improves carbon nanotube photovoltaic performance

NASA Astrophysics Data System (ADS)

Shea, Matthew J.; Wang, Jialiang; Flach, Jessica T.; Zanni, Martin T.; Arnold, Michael S.

2018-05-01

Thin film semiconducting single walled carbon nanotube (s-SWCNT) photovoltaics suffer losses due to trapping and quenching of excitons by defects induced when dispersing s-SWCNTs into solution. We study these aspects by preparing photovoltaic devices from (6,5) carbon nanotubes isolated by different processes: extended ultrasonication, brief ultrasonication, and shear force mixing. Peak quantum efficiency increases from 28% to 38% to 49% as the processing harshness decreases and is attributed to both increasing s-SWCNT length and reducing sidewall defects. Fill-factor and open-circuit voltage also improve with shear force mixing, highlighting the importance of obtaining long, defect-free s-SWCNTs for efficient photoconversion devices.

Role of confinements on the melting of Wigner molecules in quantum dots

NASA Astrophysics Data System (ADS)

Bhattacharya, Dyuti; Filinov, Alexei V.; Ghosal, Amit; Bonitz, Michael

2016-03-01

We explore the stability of a Wigner molecule (WM) formed in confinements with different geometries emulating the role of disorder and analyze the melting (or crossover) of such a system. Building on a recent calculation [D. Bhattacharya, A. Ghosal, Eur. Phys. J. B 86, 499 (2013)] that discussed the effects of irregularities on the thermal crossover in classical systems, we expand our studies in the untested territory by including both the effects of quantum fluctuations and of disorder. Our results, using classical and quantum (path integral) Monte Carlo techniques, unfold complementary mechanisms that drive the quantum and thermal crossovers in a WM and show that the symmetry of the confinement plays no significant role in determining the quantum crossover scale n X . This is because the zero-point motion screens the boundary effects within short distances. The phase diagram as a function of thermal and quantum fluctuations determined from independent criteria is unique, and shows "melting" from the WM to both the classical and quantum "liquids". An intriguing signature of weakening liquidity with increasing temperature, T, is found in the extreme quantum regime. The crossover is associated with production of defects. However, these defects appear to play distinct roles in driving the quantum and thermal "melting". Our analyses carry serious implications for a variety of experiments on many-particle systems - semiconductor heterostructure quantum dots, trapped ions, nanoclusters, colloids and complex plasma.

Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes

NASA Astrophysics Data System (ADS)

Hussain, Laiq; Karimi, Mohammad; Berg, Alexander; Jain, Vishal; Borgström, Magnus T.; Gustafsson, Anders; Samuelson, Lars; Pettersson, Håkan

2017-12-01

Radial GaInP/AlGaInP nanowire array light-emitting diodes (LEDs) are promising candidates for novel high-efficiency solid state lighting due to their potentially large strain-free active emission volumes compared to planar LEDs. Moreover, by proper tuning of the diameter of the nanowires, the fraction of emitted light extracted can be significantly enhanced compared to that of planar LEDs. Reports so far on radial growth of nanowire LED structures, however, still point to significant challenges related to obtaining defect-free radial heterostructures. In this work, we present evidence of optically active growth-induced defects in a fairly broad energy range in vertically processed radial GaInP/AlGaInP quantum well nanowire array LEDs using a variety of complementary experimental techniques. In particular, we demonstrate strong infrared electroluminescence in a spectral range centred around 1 eV (1.2 μm) in addition to the expected red light emission from the quantum well. Spatially resolved cathodoluminescence studies reveal a patchy red light emission with clear spectral features along the NWs, most likely induced by variations in QW thickness, composition and barriers. Dark areas are attributed to infrared emission generated by competing defect-assisted radiative transitions, or to trapping mechanisms involving non-radiative recombination processes. Possible origins of the defects are discussed.

Applications of the trilinear Hamiltonian with three trapped ions

NASA Astrophysics Data System (ADS)

Hablutzel Marrero, Roland Esteban; Ding, Shiqian; Maslennikov, Gleb; Gan, Jaren; Nimmrichter, Stefan; Roulet, Alexandre; Dai, Jibo; Scarani, Valerio; Matsukevich, Dzmitry

2017-04-01

The trilinear Hamiltonian a† bc + ab†c† , which describes a nonlinear interaction between harmonic oscillators, can be implemented to study different phenomena ranging from simple quantum models to quantum thermodynamics. We engineer this coupling between three modes of motion of three trapped 171Yb+ ions, where the interaction arises naturally from their mutual (anharmonic) Coulomb repulsion. By tuning our trapping parameters we are able to turn on / off resonant exchange of energy between the modes on demand. We present applications of this Hamiltonian for simulations of the parametric down conversion process in the regime of depleted pump, a simple model of Hawking radiation, and the Tavis-Cummings model. We also discuss the implementation of the quantum absorption refrigerator in such system and experimentally study effects of quantum coherence on its performance. This research is supported by the National Research Foundation, Prime Minister's Office, Singapore and the Ministry of Education, Singapore under the Research Centres of Excellence programme.

Probing the defects in nano-semiconductors using positrons

NASA Astrophysics Data System (ADS)

Nambissan, P. M. G.

2011-01-01

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn2+-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Melting of Boltzmann particles in different 2D trapping potential

NASA Astrophysics Data System (ADS)

Bhattacharya, Dyuti; Filinov, Alexei; Ghosal, Amit; Bonitz, Michael

2015-03-01

We analyze the quantum melting of two dimensional Wigner solid in several confined geometries and compare them with corresponding thermal melting in a purely classical system. Our results show that the geometry play little role in deciding the crossover quantum parameter nX, as the effects from boundary is well screened by the quantum zero point motion. The unique phase diagram in the plane of thermal and quantum fluctuations determined from independent melting criteria separates out the Wigner molecule ``phase'' from the classical and quantum ``liquids''. An intriguing signature of weakening liquidity with increasing temperature T have been found in the extreme quantum regime (n). This crossover is associated with production of defects, just like in case of thermal melting, though the role of them in determining the mechanism of the crossover appears different. Our study will help comprehending melting in a variety of experimental realization of confined system - from quantum dots to complex plasma.

Chiral quantum dot based materials

NASA Astrophysics Data System (ADS)

Govan, Joseph; Loudon, Alexander; Baranov, Alexander V.; Fedorov, Anatoly V.; Gun'ko, Yurii

2014-05-01

Recently, the use of stereospecific chiral stabilising molecules has also opened another avenue of interest in the area of quantum dot (QD) research. The main goal of our research is to develop new types of technologically important quantum dot materials containing chiral defects, study their properties and explore their applications. The utilisation of chiral penicillamine stabilisers allowed the preparation of new water soluble white emitting CdS quantum nanostructures which demonstrated circular dichroism in the band-edge region of the spectrum. It was also demonstrated that all three types of QDs (D-, L-, and Rac penicillamine stabilised) show very broad emission bands between 400 and 700 nm due to defects or trap states on the surfaces of the nanocrystals. In this work the chiral CdS based quantum nanostructures have also been doped by copper metal ions and new chiral penicilamine stabilized CuS nanoparticles have been prepared and investigated. It was found that copper doping had a strong effect at low levels in the synthesis of chiral CdS nanostructures. We expect that this research will open new horizons in the chemistry of chiral nanomaterials and their application in biotechnology, sensing and asymmetric synthesis.

Ultrafast exciton migration in an HJ-aggregate: Potential surfaces and quantum dynamics

NASA Astrophysics Data System (ADS)

Binder, Robert; Polkehn, Matthias; Ma, Tianji; Burghardt, Irene

2017-01-01

Quantum dynamical and electronic structure calculations are combined to investigate the mechanism of exciton migration in an oligothiophene HJ aggregate, i.e., a combination of oligomer chains (J-type aggregates) and stacked aggregates of such chains (H-type aggregates). To this end, a Frenkel exciton model is parametrized by a recently introduced procedure [Binder et al., J. Chem. Phys. 141, 014101 (2014)] which uses oligomer excited-state calculations to perform an exact, point-wise mapping of coupled potential energy surfaces to an effective Frenkel model. Based upon this parametrization, the Multi-Layer Multi-Configuration Time-Dependent Hartree (ML-MCTDH) method is employed to investigate ultrafast dynamics of exciton transfer in a small, asymmetric HJ aggregate model composed of 30 sites and 30 active modes. For a partially delocalized initial condition, it is shown that a torsional defect confines the trapped initial exciton, and planarization induces an ultrafast resonant transition between an HJ-aggregated segment and a covalently bound "dangling chain" end. This model is a minimal realization of experimentally investigated mixed systems exhibiting ultrafast exciton transfer between aggregated, highly planarized chains and neighboring disordered segments.

Topological Defects in Liquid Crystals: Studying the Correlation between Defects and Curvature

NASA Astrophysics Data System (ADS)

Melton, Charles

2015-03-01

Topological defects have recently been the subject of many fascinating studies in soft condensed matter physics. In particular, linking the evolution of topological defects to curvature changes has been a focus, leading possible applications in the areas such as cosmetics, pharmaceuticals, and electronics. In this study, defects in nematic liquid crystal droplets are investigated via laboratory and theoretical techniques. Nematic liquid crystal defects are reproduced via Monte Carlo simulations using a modified 2D XY-Model Hamiltonian. The simulation is performed on a curved surface to replicate a nematic droplet and examine possible defect configurations. To complement this theoretical work, we have trapped nematic droplets inside a dual-beam optical trap. This system allows controllable non-contact droplet deformation on a microscope based platform. Future work will focus on using the trap to stretch nematic droplets, correlating the changing topological defects with theoretical predictions.

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleksandrov, I. A., E-mail: Aleksandrov@isp.nsc.ru; Mansurov, V. G.; Zhuravlev, K. S.

2016-08-15

The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.

Electric field-induced emission enhancement and modulation in individual CdSe nanowires.

PubMed

Vietmeyer, Felix; Tchelidze, Tamar; Tsou, Veronica; Janko, Boldizsar; Kuno, Masaru

2012-10-23

CdSe nanowires show reversible emission intensity enhancements when subjected to electric field strengths ranging from 5 to 22 MV/m. Under alternating positive and negative biases, emission intensity modulation depths of 14 ± 7% are observed. Individual wires are studied by placing them in parallel plate capacitor-like structures and monitoring their emission intensities via single nanostructure microscopy. Observed emission sensitivities are rationalized by the field-induced modulation of carrier detrapping rates from NW defect sites responsible for nonradiative relaxation processes. The exclusion of these states from subsequent photophysics leads to observed photoluminescence quantum yield enhancements. We quantitatively explain the phenomenon by developing a kinetic model to account for field-induced variations of carrier detrapping rates. The observed phenomenon allows direct visualization of trap state behavior in individual CdSe nanowires and represents a first step toward developing new optical techniques that can probe defects in low-dimensional materials.

Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

NASA Astrophysics Data System (ADS)

Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

2018-04-01

We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

Photoionization of radiation-induced traps in quartz and alkali feldspars.

PubMed

Hütt, G; Jaek, I; Vasilchenko, V

2001-01-01

For the optimization of luminescence dating and dosimetry techniques on the basis of the optically stimulated luminescence, the stimulation spectra of quartz and alkali feldspars were measured in the spectral region of 250-1100 nm using optically stimulated afterglow. Optically stimulated luminescence in all studied spectral regions is induced by the same kind of deep traps, that produce thermoluminescence in the regions of palaeodosimetric peaks for both minerals. The mechanism for photoionization of deep traps was proposed as being due to delocalization of the excited state of the corresponding lattice defects. The excited state overlaps the zone states; i.e. is situated in the conduction band. Because of the high quantum yield of deep electron trap ionization in the UV spectral region, the present aim was to study the possibility of using UV-stimulation for palaeodose reconstruction.

Incoherent vs. coherent behavior in the normal state of copper oxide superconductors

NASA Technical Reports Server (NTRS)

Tesanovic, Zlatko

1991-01-01

The self-consistent quantum fluctuations around the mean-field Hartree-Fock state of the Hubbard model provide a very good description of the ground state and low temperature properties of a 2-D itinerant antiferromagnet. Very good agreement with numerical calculations and experimental data is obtained by including the one- and two-loop spin wave corrections to various physical quantities. In particular, the destruction of the long-range order above the Neel temperature can be understood as a spontaneous generation of a length-scale epsilon(T), which should be identified as the spin correlation length. For finite doping, the question of the Hartree-Fock starting point becomes a more complex one since an extra hole tends to self-trap in antiferromagnetic background. Such quantum defects in an underlying antiferromagnetic state can be spin-bags or vortex-like structures and tend to suppress the long-range order. If motion of the holes occurs on a time-scale shorter than the one associated with the motion of these quantum defects of a spin background, one obtains several important empirical features of the normal state of CuO superconductors like linear T-dependence of resistivity, the cusp in the tunneling density of states, etc. As opposed to a familiar Fermi-liquid behavior, the phenomenology of the above system is dominated by a large incoherent piece of a single hole propagator, resulting in many unusual normal state properties.

Control of the conformations of ion Coulomb crystals in a Penning trap

PubMed Central

Mavadia, Sandeep; Goodwin, Joseph F.; Stutter, Graham; Bharadia, Shailen; Crick, Daniel R.; Segal, Daniel M.; Thompson, Richard C.

2013-01-01

Laser-cooled atomic ions form ordered structures in radiofrequency ion traps and in Penning traps. Here we demonstrate in a Penning trap the creation and manipulation of a wide variety of ion Coulomb crystals formed from small numbers of ions. The configuration can be changed from a linear string, through intermediate geometries, to a planar structure. The transition from a linear string to a zigzag geometry is observed for the first time in a Penning trap. The conformations of the crystals are set by the applied trap potential and the laser parameters, and agree with simulations. These simulations indicate that the rotation frequency of a small crystal is mainly determined by the laser parameters, independent of the number of ions and the axial confinement strength. This system has potential applications for quantum simulation, quantum information processing and tests of fundamental physics models from quantum field theory to cosmology. PMID:24096901

Quantum Simulation of the Quantum Rabi Model in a Trapped Ion

NASA Astrophysics Data System (ADS)

Lv, Dingshun; An, Shuoming; Liu, Zhenyu; Zhang, Jing-Ning; Pedernales, Julen S.; Lamata, Lucas; Solano, Enrique; Kim, Kihwan

2018-04-01

The quantum Rabi model, involving a two-level system and a bosonic field mode, is arguably the simplest and most fundamental model describing quantum light-matter interactions. Historically, due to the restricted parameter regimes of natural light-matter processes, the richness of this model has been elusive in the lab. Here, we experimentally realize a quantum simulation of the quantum Rabi model in a single trapped ion, where the coupling strength between the simulated light mode and atom can be tuned at will. The versatility of the demonstrated quantum simulator enables us to experimentally explore the quantum Rabi model in detail, including a wide range of otherwise unaccessible phenomena, as those happening in the ultrastrong and deep strong-coupling regimes. In this sense, we are able to adiabatically generate the ground state of the quantum Rabi model in the deep strong-coupling regime, where we are able to detect the nontrivial entanglement between the bosonic field mode and the two-level system. Moreover, we observe the breakdown of the rotating-wave approximation when the coupling strength is increased, and the generation of phonon wave packets that bounce back and forth when the coupling reaches the deep strong-coupling regime. Finally, we also measure the energy spectrum of the quantum Rabi model in the ultrastrong-coupling regime.

Nongeminate Radiative Recombination of Free Charges in Cation-Exchanged PbS Quantum Dot Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Ashley R.; Beard, Matthew C.; Johnson, Justin C.

2016-06-01

Using photoluminescence (PL) spectroscopy we explore the radiative recombination pathways in PbS quantum dots (QDs) synthesized by two methods. We compare conventionally synthesized PbS from a PbO precursor to PbS synthesized using cation-exchange from CdS QDs. We show that strongly coupled films of PbS QDs from the cation-exchange luminesce with significant efficiency at room temperature. This is in stark contrast to conventional PbS QDs, which have exceedingly weak room temperature emission. Moreover, the power dependence of the emission is quadratic, indicating bimolecular radiative recombination that is reasonably competitive with trap-assisted recombination, a feature previously unreported in coupled PbS QD films.more » We interpret these results in terms of a greatly reduced defect concentration for cation-exchanged QDs that mitigates the influence of trap-assisted recombination. Cation-exchanged QDs have recently been employed in highly efficient and air-stable lead chalcogenide QD devices, and the reduced number of trap states inferred here may lead to improved current collection and higher open circuit voltage.« less

Nongeminate radiative recombination of free charges in cation-exchanged PbS quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Ashley R.; Beard, Matthew C.; Johnson, Justin C.

2016-06-01

Using photoluminescence (PL) spectroscopy we explore the radiative recombination pathways in PbS quantum dots (QDs) synthesized by two methods. We compare conventionally synthesized PbS from a PbO precursor to PbS synthesized using cation-exchange from CdS QDs. We show that strongly coupled films of PbS QDs from the cation-exchange luminesce with significant efficiency at room temperature. This is in stark contrast to conventional PbS QDs, which have exceedingly weak room temperature emission. Moreover, the power dependence of the emission is quadratic, indicating bimolecular radiative recombination that is reasonably competitive with trap-assisted recombination, a feature previously unreported in coupled PbS QD films.more » We interpret these results in terms of a greatly reduced defect concentration for cation-exchanged QDs that mitigates the influence of trap-assisted recombination. Cation-exchanged QDs have recently been employed in highly efficient and air-stable lead chalcogenide QD devices, and the reduced number of trap states inferred here may lead to improved current collection and higher open circuit voltage.« less

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE PAGES

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

2016-10-04

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Quantum-enhanced deliberation of learning agents using trapped ions

NASA Astrophysics Data System (ADS)

Dunjko, V.; Friis, N.; Briegel, H. J.

2015-02-01

A scheme that successfully employs quantum mechanics in the design of autonomous learning agents has recently been reported in the context of the projective simulation (PS) model for artificial intelligence. In that approach, the key feature of a PS agent, a specific type of memory which is explored via random walks, was shown to be amenable to quantization, allowing for a speed-up. In this work we propose an implementation of such classical and quantum agents in systems of trapped ions. We employ a generic construction by which the classical agents are ‘upgraded’ to their quantum counterparts by a nested process of adding coherent control, and we outline how this construction can be realized in ion traps. Our results provide a flexible modular architecture for the design of PS agents. Furthermore, we present numerical simulations of simple PS agents which analyze the robustness of our proposal under certain noise models.

The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Jihyun; Jeon, Sanghun

2016-05-01

Defects in oxide semiconductors not only influence the initial device performance but also affect device reliability. The front channel is the major carrier transport region during the transistor turn-on stage, therefore an understanding of defects located in the vicinity of the interface is very important. In this study, we investigated the dynamics of charge transport in a nanocrystalline hafnium-indium-zinc-oxide thin-film transistor (TFT) by short pulse I-V, transient current and 1/f noise measurement methods. We found that the fast charging behavior of the tested device stems from defects located in both the front channel and the interface, following a multi-trapping mechanism. We found that a silicon-nitride stacked hafnium-indium-zinc-oxide TFT is vulnerable to interfacial charge trapping compared with silicon-oxide counterpart, causing significant mobility degradation and threshold voltage instability. The 1/f noise measurement data indicate that the carrier transport in a silicon-nitride stacked TFT device is governed by trapping/de-trapping processes via defects in the interface, while the silicon-oxide device follows the mobility fluctuation model.

Measurements, modeling, and simulation of semiconductor/gate dielectric defects using random telegraph signals

NASA Astrophysics Data System (ADS)

Nour, Mohamed

Constructing an effective statistical model and a simulation tool that can predict the phenomenon of random telegraph signals (RTS) is the objective of this work. The continuous scaling down of metal oxide -- semiconductor field effect transistors (MOSFETs) makes charging/discharging traps(s) located at the silicon/silicon dioxide interface or deep in the oxide bulk by mobile charge(s) a more pronounced problem for both analog and digital applications. The intent of this work is to develop an RTS statistical model and a simulation tool based on first principles and supported by extensive experimental data. The newly developed RTS statistical model and its simulation tool should be able to replicate and predict the RTS in time and frequency domains. First, room temperature RTS measurements are performed which provide limited information about the trap. They yield the extraction of some trap and RTS characteristics such as average capture and emission times associated with RTS traces, trap position in the oxide with respect to the Si/SiO 2 interface and along the channel with respect to the source, capture cross section, and trap energies in the Si and SiO2 band -- gaps. Variable temperature measurements, on the other hand, yield much more valuable information. Variable temperature RTS measurements from room temperature down to 80 K were performed, with the MOSFET biased from threshold voltage to strong inversion, in the linear and saturation regions. Variable temperature RTS measurements yield the extraction of trap characteristics such as capture cross -- section prefactor, capture and emission activation energies, change in entropy and enthalpy, and relaxation energy associated with a trap from which the nature and origin of a defect center can be identified. The newly developed Random Telegraph Signals Simulation (RTSSIM) is based on several physical principles and mechanisms e.g. (1) capturing and emitting a mobile charge from and to the channel is governed by phonon- assisted- tunneling, (2) traps only within a few kBT of the Fermi energy level are considered electrically active, (3) trap density is taken as U -- shaped in energy in the silicon band-gap, (4) device scalability is accounted for, (5) and temperature dependence of all parameters is considered. RTSSIM reconstructs the RTS traces in time domain from which the power spectral density (PSD) is evaluated. If there is 20 or more active traps, RTSSIM evaluates the PSD from the superposition of the RTS spectra. RTSSIM extracts RTS and trap characteristics from the simulated RTS data and outputs them to MS Excel files for further analyses and study. The novelty of this work is: (1) it is the first time quantum trap states have been accurately assigned to each switching level in a complex RTS corresponding to dependently and independently interacting traps, (2) new physics-based measurement-driven model and simulation tool has been developed for RTS phenomenon in a MOSFET, (3) and it is the first time a species in SiO2 responsible for RTS has been identified through time-domain measurements and extensive analysis using four trap characteristics at the same time.

Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

NASA Astrophysics Data System (ADS)

Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

2018-02-01

The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

Arthur L. Schawlow Prize in Laser Science Talk: Trapped Ion Quantum Networks with Light

NASA Astrophysics Data System (ADS)

Monroe, Christopher

2015-05-01

Laser-cooled atomic ions are standards for quantum information science, acting as qubit memories with unsurpassed levels of quantum coherence while also allowing near-perfect measurement. When qubit state-dependent optical dipole forces are applied to a collection of trapped ions, their Coulomb interaction is modulated in a way that allows the entanglement of the qubits through quantum gates that can form the basis of a quantum computer. Similar optical forces allow the simulation of quantum many-body physics, where recent experiments are approaching a level of complexity that cannot be modelled with conventional computers. Scaling to much larger numbers of qubits can be accomplished by coupling trapped ion qubits through optical photons, where entanglement over remote distances can be used for quantum communication and large-scale distributed quantum computers. Laser sources and quantum optical techniques are the workhorse for such quantum networks, and will continue to lead the way as future quantum hardware is developed. This work is supported by the ARO with funding from the IARPA MQCO program, the DARPA Quiness Program, the ARO MURI on Hybrid Quantum Circuits, the AFOSR MURIs on Quantum Transduction and Quantum Verification, and the NSF Physics Frontier Center at JQI.

Quantum transitions driven by one-bond defects in quantum Ising rings.

PubMed

Campostrini, Massimo; Pelissetto, Andrea; Vicari, Ettore

2015-04-01

We investigate quantum scaling phenomena driven by lower-dimensional defects in quantum Ising-like models. We consider quantum Ising rings in the presence of a bond defect. In the ordered phase, the system undergoes a quantum transition driven by the bond defect between a magnet phase, in which the gap decreases exponentially with increasing size, and a kink phase, in which the gap decreases instead with a power of the size. Close to the transition, the system shows a universal scaling behavior, which we characterize by computing, either analytically or numerically, scaling functions for the low-level energy differences and the two-point correlation function. We discuss the implications of these results for the nonequilibrium dynamics in the presence of a slowly varying parallel magnetic field h, when going across the first-order quantum transition at h=0.

Ionization Spectroscopic Measurement of nP Rydberg Levels of 87Rb Cold Atoms

NASA Astrophysics Data System (ADS)

Li, Yufan; Zaheeruddin, Syed; Zhao, Dongmei; Ma, Xinwen; Yang, Jie

2018-05-01

We created an ultracold plasma via the spontaneous ionization of cold dense Rydberg atoms of 87Rb in a magneto-optical trap (MOT), and measured the nS1/2 (n = 50-80), nP1/2 (n = 16-23), nP3/2 (n = 16-98), and nD5/2 (n = 49-96) Rydberg levels by detecting the electrons in the ultracold plasma. By fitting the energy levels of Rydberg states, the first ionization potential of 33690.950(11) cm-1 and the quantum defects of S, P, and D orbitals were obtained. The absolute transition energies of nS1/2 (n = 66-80), nP1/2 (n = 16-23), nP3/2 (n = 16-98), and nD5/2 (n = 58-96) states of 87Rb, as well as the quantum defects for p1/2 and p3/2 series, are given for the first time.

Defect levels of semi-insulating CdMnTe:In crystals

NASA Astrophysics Data System (ADS)

Kim, K. H.; Bolotinikov, A. E.; Camarda, G. S.; Hossain, A.; Gul, R.; Yang, G.; Cui, Y.; Prochazka, J.; Franc, J.; Hong, J.; James, R. B.

2011-06-01

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

Realizing universal Majorana fermionic quantum computation

NASA Astrophysics Data System (ADS)

Wu, Ya-Jie; He, Jing; Kou, Su-Peng

2014-08-01

Majorana fermionic quantum computation (MFQC) was proposed by S. B. Bravyi and A. Yu. Kitaev [Ann. Phys. (NY) 298, 210 (2002), 10.1006/aphy.2002.6254], who indicated that a (nontopological) fault-tolerant quantum computer built from Majorana fermions may be more efficient than that built from distinguishable two-state systems. However, until now scientists have not known how to realize a MFQC in a physical system. In this paper we propose a possible realization of MFQC. We find that the end of a line defect of a p-wave superconductor or superfluid in a honeycomb lattice traps a Majorana zero mode, which becomes the starting point of MFQC. Then we show how to manipulate Majorana fermions to perform universal MFQC, which possesses possibilities for high-level local controllability through individually addressing the quantum states of individual constituent elements by using timely cold-atom technology.

Trapping behavior of Shockley-Read-Hall recombination centers in silicon solar cells

NASA Astrophysics Data System (ADS)

Gogolin, R.; Harder, N. P.

2013-08-01

We investigate the correlation between increased apparent carrier lifetime in photoconductance-based lifetime measurements and actually reduced recombination lifetime as measured by photoluminescence measurements. These findings are further reconfirmed by I-V curve measurements of solar cells. In particular, we show experimental results for lifetime samples and solar cells with and without hydrogen passivation. In the samples and solar cells without hydrogen passivation, we find both a stronger trapping behavior and a lower recombination lifetime. Our model provides a consistent description of the observation of both, the increased apparent lifetime from carrier trapping and the decreasing recombination lifetime. In our model, both are caused by a single physical mechanism; i.e., by Recombination-Active-Trap (RAT) states. Upon fitting the experimental lifetime data, we find that the RAT-defect parameters for the hydrogen-passivated and non-hydrogen-passivated lifetime samples and solar cells are identical except for the defect concentration: hydrogen-passivation reduced the defect density by 50% in both, the lifetime samples and solar cells. We conclude that trapping should be considered as an indication for hidden, yet potentially strongly increased, low injection recombination activity.

Low quantum defect laser performance

NASA Astrophysics Data System (ADS)

Bowman, Steven R.

2017-01-01

Low quantum defect lasers are possible using near-resonant optical pumping. This paper examines the laser material performance as the quantum defect of the laser is reduced. A steady-state model is developed, which incorporates the relevant physical processes in these materials and predicts extraction efficiency and waste heat generation. As the laser quantum defect is reduced below a few percent, the impact of fluorescence cooling must be included in the analysis. The special case of a net zero quantum defect laser is examined in detail. This condition, referred to as the radiation balance laser (RBL), is shown to provide two orders of magnitude lower heat generation at the cost of roughly 10% loss in extraction efficiency. Numerical examples are presented with the host materials Yb:YAG and Yb:Silica. The general conditions, which yield optimal laser efficiency, are derived and explored.

Efficient energy transfer in light-harvesting systems: Quantum-classical comparison, flux network, and robustness analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu Jianlan; Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139; Liu Fan

2012-11-07

Following the calculation of optimal energy transfer in thermal environment in our first paper [J. L. Wu, F. Liu, Y. Shen, J. S. Cao, and R. J. Silbey, New J. Phys. 12, 105012 (2010)], full quantum dynamics and leading-order 'classical' hopping kinetics are compared in the seven-site Fenna-Matthews-Olson (FMO) protein complex. The difference between these two dynamic descriptions is due to higher-order quantum corrections. Two thermal bath models, classical white noise (the Haken-Strobl-Reineker (HSR) model) and quantum Debye model, are considered. In the seven-site FMO model, we observe that higher-order corrections lead to negligible changes in the trapping time ormore » in energy transfer efficiency around the optimal and physiological conditions (2% in the HSR model and 0.1% in the quantum Debye model for the initial site at BChl 1). However, using the concept of integrated flux, we can identify significant differences in branching probabilities of the energy transfer network between hopping kinetics and quantum dynamics (26% in the HSR model and 32% in the quantum Debye model for the initial site at BChl 1). This observation indicates that the quantum coherence can significantly change the distribution of energy transfer pathways in the flux network with the efficiency nearly the same. The quantum-classical comparison of the average trapping time with the removal of the bottleneck site, BChl 4, demonstrates the robustness of the efficient energy transfer by the mechanism of multi-site quantum coherence. To reconcile with the latest eight-site FMO model which is also investigated in the third paper [J. Moix, J. L. Wu, P. F. Huo, D. F. Coker, and J. S. Cao, J. Phys. Chem. Lett. 2, 3045 (2011)], the quantum-classical comparison with the flux network analysis is summarized in Appendix C. The eight-site FMO model yields similar trapping time and network structure as the seven-site FMO model but leads to a more disperse distribution of energy transfer pathways.« less

Optical characterization of wide-gap detector-grade semiconductors

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a temperature range from 300K to 110K. The experimental data was analyzed using a trapping model. In CZT, because the majority carrier concentration is close to the intrinsic carrier concentration, the trapping time increases exponentially as the temperature decreases below about 160K. While, in TlBr, the majority carrier concentration is many orders of magnitude greater than the intrinsic carrier concentration and the trapping time followed a 1T temperature dependence over the range of temperatures studied. The results of the model suggest that a moderately deep compensation center, located approximately 200 meV from the middle of the bandgap, could be used to significantly increase the room temperature trapping time in TlBr. The results of this model demonstrate that the room temperature trapping time in TlBr can, in principle, approach 0.1ms through the introduction of a moderately deep compensation level but without decreasing the overall trap concentration. This strategy is not possible in CZT, because the band gap is too small to use a moderately deep compensation level while still maintaining high material resistivity. Carrier trapping times were measured in three polycrystalline TlBr samples produced by melting commercial TlBr beads in a sealed quartz ampoule for two hours at three different temperatures near the melting point. The trapping time decreased with increasing melting temperature, presumably due to the thermal generation of a trap state.

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Engineered long-range interactions on a 2D array of trapped ions

NASA Astrophysics Data System (ADS)

Britton, Joseph W.; Sawyer, Brian C.; Bollinger, John J.; Freericks, James K.

2014-03-01

Ising interactions are one paradigm used to model quantum magnetism in condensed matter systems. At NIST Boulder we confine and Doppler laser cool hundreds of 9Be+ ions in a Penning trap. The valence electron of each ion behaves as an ideal spin-1/2 particle and, in the limit of weak radial confinement relative to axial confinement, the ions naturally form a two-dimensional triangular lattice. A variable-range anti-ferromagnetic Ising interaction is engineered with a spin-dependent optical dipole force (ODF) through spin-dependent excitation of collective modes of ion motion. We have also exploited this spin-dependent force to perform spectroscopy and thermometry of the normal modes of the trapped ion crystal. The high spin-count and long-range spin-spin couplings achievable in the NIST Penning trap brings within reach simulation of computationally intractable problems in quantum magnetism. Examples include modeling quantum magnetic phase transitions and propagation of spin correlations resulting from a quantum quench. The Penning system may also be amenable to observation of spin-liquid behavior thought to arise in systems where the underlying lattice structure can frustrate long-range ordering. Supported by DARPA OLE and NIST.

Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices

NASA Astrophysics Data System (ADS)

Wimmer, Yannick; El-Sayed, Al-Moatasem; Gös, Wolfgang; Grasser, Tibor; Shluger, Alexander L.

2016-06-01

Charge capture and emission by point defects in gate oxides of metal-oxide-semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into their characteristics. In particular, these experimental data show a repeated dis- and reappearance (the so-called volatility) of the defect-related signals. We use multiscale modelling to explain the charge capture and emission as well as defect volatility in amorphous SiO2 gate dielectrics. We first briefly discuss the recent experimental results and use a multiphonon charge capture model to describe the charge-trapping behaviour of defects in silicon-based MOSFETs. We then link this model to ab initio calculations that investigate the three most promising defect candidates. Statistical distributions of defect characteristics obtained from ab initio calculations in amorphous SiO2 are compared with the experimentally measured statistical properties of charge traps. This allows us to suggest an atomistic mechanism to explain the experimentally observed volatile behaviour of defects. We conclude that the hydroxyl-E' centre is a promising candidate to explain all the observed features, including defect volatility.

Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Akimoto, Ryoichi

2018-02-01

The recombination-enhanced defect reaction (REDR) effect in single green/yellow emission BeZnCdSe quantum wells (QWs) has been investigated using photoluminescence (PL) microscopy and time-resolved PL measurements. Even though a lattice hardening effect is expected in BeZnCdSe QWs alloyed with beryllium, PL intensity enhancement due to photoannealing as well as subsequent degradation due to generation of dark spot defects (DSDs) and dark line defects (DLDs) were observed. PL microscopy provided insights into the REDR effect during photoannealing. PL images were spatially inhomogeneous in intensity for the as-grown wafer, with the darker areas having size from submicrometer to 1 μm becoming brighter with the progress of photoannealing, revealing a built-in distribution of point defects incorporated in the structure during crystal growth. In addition, we showed that the PL lifetime increased with the progress of photoannealing; hence, the density of point defects decreased due to the REDR effect. A nonradiative decay channel insensitive to the REDR effect was also found in the area free from DSDs and DLDs, suggesting that another type of defect remained in the structure (note that this is not the defect reported in study of slow-mode degradation in long-lived laser diodes). As the degradation progresses, a nonradiative channel such as photocarrier diffusion and subsequent trapping by a patch of DLDs will emerge before radiative recombination.

Topology, localization, and quantum information in atomic, molecular and optical systems

NASA Astrophysics Data System (ADS)

Yao, Norman Ying

The scientific interface between atomic, molecular and optical (AMO) physics, condensed matter, and quantum information science has recently led to the development of new insights and tools that bridge the gap between macroscopic quantum behavior and detailed microscopic intuition. While the dialogue between these fields has sharpened our understanding of quantum theory, it has also raised a bevy of new questions regarding the out-of-equilibrium dynamics and control of many-body systems. This thesis is motivated by experimental advances that make it possible to produce and probe isolated, strongly interacting ensembles of disordered particles, as found in systems ranging from trapped ions and Rydberg atoms to ultracold polar molecules and spin defects in the solid state. The presence of strong interactions in these systems underlies their potential for exploring correlated many-body physics and this thesis presents recent results on realizing fractionalization and localization. From a complementary perspective, the controlled manipulation of individual quanta can also enable the bottom-up construction of quantum devices. To this end, this thesis also describes blueprints for a room-temperature quantum computer, quantum credit cards and nanoscale quantum thermometry.

Recent progress in the understanding of H transport and trapping in W

NASA Astrophysics Data System (ADS)

Schmid, K.; Bauer, J.; Schwarz-Selinger, T.; Markelj, S.; Toussaint, U. v.; Manhard, A.; Jacob, W.

2017-12-01

The retention of hydrogen isotopes (HIs) (H, D and T) in the first, plasma exposed wall is one of the key concerns for the operation of future long pulse fusion devices. It affects the particle-, momentum- and energy balance in the scrape off layer as well as the retention of HIs and their permeation into the coolant. The currently accepted picture that is used for interpreting current laboratory and tokamak experiments is that of diffusion hindered by trapping at lattice defects. This paper summarises recent results that show that this current picture of how HIs are transported and retained in W needs to be extended: the modification of the surface (e.g. blistering) can lead to the formation of fast loss channels for near surface HIs. Trapping at single occupancy traps with fixed de-trapping energy fails to explain isotope exchange experiments, instead a trapping model with multi occupancy traps and fill level dependent de-trapping energies is required. The presence of interstitial impurities like N or C may affect the transport of solute HI. The presence of HIs during damage creation by e.g. neutrons stabilises defects and reduces defect annealing at elevated temperatures.

Single-server blind quantum computation with quantum circuit model

NASA Astrophysics Data System (ADS)

Zhang, Xiaoqian; Weng, Jian; Li, Xiaochun; Luo, Weiqi; Tan, Xiaoqing; Song, Tingting

2018-06-01

Blind quantum computation (BQC) enables the client, who has few quantum technologies, to delegate her quantum computation to a server, who has strong quantum computabilities and learns nothing about the client's quantum inputs, outputs and algorithms. In this article, we propose a single-server BQC protocol with quantum circuit model by replacing any quantum gate with the combination of rotation operators. The trap quantum circuits are introduced, together with the combination of rotation operators, such that the server is unknown about quantum algorithms. The client only needs to perform operations X and Z, while the server honestly performs rotation operators.

Effects produced by iodine irradiation on high resistivity silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazanu, S.; Slav, A.; Lepadatu, A.-M.

2012-12-10

The effects of 5 Multiplication-Sign 10{sup 11} cm{sup -26+}I{sup 127} ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The defects produced by irradiation which act as traps were investigated. Thermally stimulated current measurements without externally applied bias were used, and for this the traps were charged by illuminating samples with 1000, 800, and 400 nm wavelengths. The discharge currents were recorded and modeled, and therefore the parameters of the traps were determined. The presence of I ions, heavier than Si, stopped into the target was modeled as amore » temperature independent electric field.« less

Experimental Trapped-ion Quantum Simulation of the Kibble-Zurek dynamics in momentum space

PubMed Central

Cui, Jin-Ming; Huang, Yun-Feng; Wang, Zhao; Cao, Dong-Yang; Wang, Jian; Lv, Wei-Min; Luo, Le; del Campo, Adolfo; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2016-01-01

The Kibble-Zurek mechanism is the paradigm to account for the nonadiabatic dynamics of a system across a continuous phase transition. Its study in the quantum regime is hindered by the requisite of ground state cooling. We report the experimental quantum simulation of critical dynamics in the transverse-field Ising model by a set of Landau-Zener crossings in pseudo-momentum space, that can be probed with high accuracy using a single trapped ion. We test the Kibble-Zurek mechanism in the quantum regime in the momentum space and find the measured scaling of excitations is in accordance with the theoretical prediction. PMID:27633087

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions.

PubMed

Sherkar, Tejas S; Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Sessolo, Michele; Bolink, Henk J; Koster, L Jan Anton

2017-05-12

Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap-assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p-i-n and n-i-p CH 3 NH 3 PbI 3 solar cells, including the light intensity dependence of the open-circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain boundaries (GBs), their neutral (when filled with photogenerated charges) disposition along with the long-lived nature of holes leads to the high performance of PSCs. The sign of the traps (when filled) is of little importance in efficient solar cells with compact morphologies (fused GBs, low trap density). On the other hand, solar cells with noncompact morphologies (open GBs, high trap density) are sensitive to the sign of the traps and hence to the cell preparation methods. Even in the presence of traps at GBs, trap-assisted recombination at interfaces (between the transport layers and the perovskite) is the dominant loss mechanism. We find a direct correlation between the density of traps, the density of mobile ionic defects, and the degree of hysteresis observed in the current-voltage ( J - V ) characteristics. The presence of defect states or mobile ions not only limits the device performance but also plays a role in the J - V hysteresis.

A scalable quantum computer with ions in an array of microtraps

PubMed

Cirac; Zoller

2000-04-06

Quantum computers require the storage of quantum information in a set of two-level systems (called qubits), the processing of this information using quantum gates and a means of final readout. So far, only a few systems have been identified as potentially viable quantum computer models--accurate quantum control of the coherent evolution is required in order to realize gate operations, while at the same time decoherence must be avoided. Examples include quantum optical systems (such as those utilizing trapped ions or neutral atoms, cavity quantum electrodynamics and nuclear magnetic resonance) and solid state systems (using nuclear spins, quantum dots and Josephson junctions). The most advanced candidates are the quantum optical and nuclear magnetic resonance systems, and we expect that they will allow quantum computing with about ten qubits within the next few years. This is still far from the numbers required for useful applications: for example, the factorization of a 200-digit number requires about 3,500 qubits, rising to 100,000 if error correction is implemented. Scalability of proposed quantum computer architectures to many qubits is thus of central importance. Here we propose a model for an ion trap quantum computer that combines scalability (a feature usually associated with solid state proposals) with the advantages of quantum optical systems (in particular, quantum control and long decoherence times).

Exact mapping of the 2+1 Dirac oscillator onto the Jaynes-Cummings model: Ion-trap experimental proposal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bermudez, A.; Martin-Delgado, M. A.; Solano, E.

2007-10-15

We study the dynamics of the 2+1 Dirac oscillator exactly and find spin oscillations due to a Zitterbewegung of purely relativistic origin. We find an exact mapping of this quantum-relativistic system onto a Jaynes-Cummings model, describing the interaction of a two-level atom with a quantized single-mode field. This equivalence allows us to map a series of quantum optical phenomena onto the relativistic oscillator and vice versa. We make a realistic experimental proposal, in reach with current technology, for studying the equivalence of both models using a single trapped ion.

Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

NASA Astrophysics Data System (ADS)

Morozov, Yurii; Kuno, Masaru K.

2017-02-01

The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

Quantum Stat Mech in a Programmable Spin Chain of Trapped Ions

NASA Astrophysics Data System (ADS)

Monroe, Christopher

2017-04-01

Trapped atomic ions are a versatile and very clean platform for the quantum programming of interacting spin models and the study of quantum nonequilibrium phenomena. When spin-dependent optical dipole forces are applied to a collection of trapped ions, an effective long-range quantum magnetic interaction arises, with reconfigurable and tunable graphs. Following earlier work on many-body spectroscopy and quench dynamics, we have recently studied many body non-thermalization processes in this system. Frustrated Hamiltonian dynamics can lead to prethermalization, and by adding programmable disorder between the sites, we have observed the phenomenon of many body localization (MBL). Finally, by applying a periodically driven Floquet Hamiltonian tempered by MBL, we report the observation of a discrete ``time crystal'' in the stable appearance of a subharmonic response of the system to the periodic drive. This work is supported by the ARO Atomic Physics Program, the AFOSR MURI on Quantum Measurement and Verification, the IARPA LogiQ Program, and the NSF Physics Frontier Center at JQI.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

pH-dependent optical properties of N-acetyl-L-cysteine-capped ZnSe(S) nanocrystals with intense/stable emissions

NASA Astrophysics Data System (ADS)

Soheyli, Ehsan; Sahraei, Reza; Nabiyouni, Gholamreza

2017-03-01

In the present study, a series of aqueous-based ZnSe(S) nanocrystals (NCs) was prepared at different solution pH ranging from 8 to 11.9, and using N-acetyl-L-cysteine (NAC) as capping agent. In addition to zinc blende structure, the X-ray diffraction studies demonstrated the quantum size regime of the ZnSe(S) NCs. To gain further insight toward the influence of the quantum confinement and pH values on optical properties of the as-prepared NCs, their UV-visible absorption and photoluminescence spectra were systematically analyzed. The absorption spectra experienced a red shift from 340 to 382 nm as the pH increased from 8.0 to 11.9, indicating the growth of the as-prepared ZnSe(S) NCs. The emission spectra also show the obvious red shift and the relative area of excitonic to trap emission, firstly increases from pH = 8.0 to 10.7, and then decreases by further increasing of the solution pH. The initial behavior might be due to the improved surface passivation of the trap dangling states by better deprotonation of thiol groups in NAC, whereas at pH >10.7, the faster growth rate of the ZnSe(s) NCs may lead to the formation of many defect sites. All of these phenomena were combined in the scheme which displays the effect of quantum confinement and solution pH on variation of the excitonic and trap-related emissions.

Quantum Error Correction with a Globally-Coupled Array of Neutral Atom Qubits

DTIC Science & Technology

2013-02-01

magneto - optical trap ) located at the center of the science cell. Fluorescence...Bottle beam trap GBA Gaussian beam array EMCCD electron multiplying charge coupled device microsec. microsecond MOT Magneto - optical trap QEC quantum error correction qubit quantum bit ...developed and implemented an array of neutral atom qubits in optical traps for studies of quantum error correction. At the end of the three year

DFT study of anisotropy effects on the electronic properties of diamond nanowires with nitrogen-vacancy center.

PubMed

Solano, Jesús Ramírez; Baños, Alejandro Trejo; Durán, Álvaro Miranda; Quiroz, Eliel Carvajal; Irisson, Miguel Cruz

2017-09-26

In the development of quantum computing and communications, improvements in materials capable of single photon emission are of great importance. Advances in single photon emission have been achieved experimentally by introducing nitrogen-vacancy (N-V) centers on diamond nanostructures. However, theoretical modeling of the anisotropic effects on the electronic properties of these materials is almost nonexistent. In this study, the electronic band structure and density of states of diamond nanowires with N-V defects were analyzed through first principles approach using the density functional theory and the supercell scheme. The nanowires were modeled on two growth directions [001] and [111]. All surface dangling bonds were passivated with hydrogen (H) atoms. The results show that the N-V introduces multiple trap states within the energy band gap of the diamond nanowire. The energy difference between these states is influenced by the growth direction of the nanowires, which could contribute to the emission of photons with different wavelengths. The presence of these trap states could reduce the recombination rate between the conduction and the valence band, thus favoring the single photon emission. Graphical abstract Diamond nanowires with nitrogen-vacancy centerᅟ.

Digital Quantum Simulation of Minimal AdS/CFT.

PubMed

García-Álvarez, L; Egusquiza, I L; Lamata, L; Del Campo, A; Sonner, J; Solano, E

2017-07-28

We propose the digital quantum simulation of a minimal AdS/CFT model in controllable quantum platforms. We consider the Sachdev-Ye-Kitaev model describing interacting Majorana fermions with randomly distributed all-to-all couplings, encoding nonlocal fermionic operators onto qubits to efficiently implement their dynamics via digital techniques. Moreover, we also give a method for probing nonequilibrium dynamics and the scrambling of information. Finally, our approach serves as a protocol for reproducing a simplified low-dimensional model of quantum gravity in advanced quantum platforms as trapped ions and superconducting circuits.

Digital Quantum Simulation of Minimal AdS /CFT

NASA Astrophysics Data System (ADS)

García-Álvarez, L.; Egusquiza, I. L.; Lamata, L.; del Campo, A.; Sonner, J.; Solano, E.

2017-07-01

We propose the digital quantum simulation of a minimal AdS /CFT model in controllable quantum platforms. We consider the Sachdev-Ye-Kitaev model describing interacting Majorana fermions with randomly distributed all-to-all couplings, encoding nonlocal fermionic operators onto qubits to efficiently implement their dynamics via digital techniques. Moreover, we also give a method for probing nonequilibrium dynamics and the scrambling of information. Finally, our approach serves as a protocol for reproducing a simplified low-dimensional model of quantum gravity in advanced quantum platforms as trapped ions and superconducting circuits.

Quantum efficiencies exceeding unity in amorphous silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanmaekelbergh, D.; Lagemaat, J. van de; Schropp, R.E.I.

1994-12-31

The experimental observation of internal quantum efficiencies above unity in crystalline silicon solar cells has brought up the question whether the generation of multiple electron/hole pairs has to be taken into consideration also in solar cells based on direct gap amorphous semiconductors. To study photogenerated carrier dynamics, the authors have applied Intensity Modulated Photocurrent Spectroscopy (IMPS) to hydrogenated amorphous silicon p-i-n solar cells. In the reverse voltage bias region at low illumination intensities it has been observed that the low frequency limit of the AC quantum yield Y increases significantly above unit with decreasing light intensity, indicating that more thanmore » one electron per photon is detected in the external circuit. This phenomenon can be explained by considering trapping and thermal emission of photogenerated carriers at intragap atmospheric dangling bond defect centers.« less

Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

NASA Astrophysics Data System (ADS)

Asano, Tetsuya

Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts. Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10 10 cmHz1/2/W at ˜ 77 K will enable RC-QDIP with detectivites > 1011 cmHz1/2/W that become competitive with other photodetector technologies in the mid IR (3 -- 5 mum) and long wavelength IR (8 -- 12 mum) ranges with the added advantage of materials stability and normal incidence sensitivity. Extended defect-free and size-uniform MQD structures of shallow InAs on GaAs (001) SAQDs capped with In0.15Ga0.85As strain relief layers and separated by GaAs spacer layer were grown up to 20 periods employing a judicious combination of MBE and migration enhanced epitaxy (MEE) techniques and examined by detailed transmission electron microscopy studies to reveal the absence of detectable extended defects (dislocation density < ˜ 107 /cm2). Photoluminescence studies revealed high optical quality. As our focus was on mid-infrared detectors, the MQD structures were grown in n (GaAs) -- i (MQD) -- n (GaAs) structures providing electron occupancy in at least the quantum confined ground energy states of the SAQDs and thus photodetection based upon transitions to electron excited states. Bias and temperature-dependent dark and photocurrent measurements were carried out for a variety of doping profiles and the electron density spatial distribution was determined from the resulting band bending profiles. It is revealed that almost no free electrons are present in the middle SAQD layers in the 10-period and 20-period n--i--n QDIP structures, indicating the existence of a high density (˜1015/cm3) of negative charges which can be attributed to electrons trapped in deep levels. To examine the nature of these deep traps, samples suitable for deep level transient spectroscopy measurement were synthesized and examined. These studies, carried out for the first time for SAQDs, revealed that the deep traps are dominantly present in the GaAs overgrowth layers grown at 500°C by MBE. For structures involving GaAs overgrowths using MEE at temperatures as low as 350°C, the deep trap density in the GaAs overgrowth layer was found to be significantly reduced by factor of ˜ 20. Thus, employing MEE growth for GaAs spacer layers in n--i(20-period MQD)-- n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density. Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 -- 5 mum infrared regime were realized utilizing [(AlAs)1(GaAs)4]4 short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ˜ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ˜ 1010 cmHz 1/2/W at ˜ 77 K competitive with other IR photodetector technologies.

Polarization-dependent atomic dipole traps behind a circular aperture for neutral-atom quantum computing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillen-Christandl, Katharina; Copsey, Bert D.

2011-02-15

The neutral-atom quantum computing community has successfully implemented almost all necessary steps for constructing a neutral-atom quantum computer. We present computational results of a study aimed at solving the remaining problem of creating a quantum memory with individually addressable sites for quantum computing. The basis of this quantum memory is the diffraction pattern formed by laser light incident on a circular aperture. Very close to the aperture, the diffraction pattern has localized bright and dark spots that can serve as red-detuned or blue-detuned atomic dipole traps. These traps are suitable for quantum computing even for moderate laser powers. In particular,more » for moderate laser intensities ({approx}100 W/cm{sup 2}) and comparatively small detunings ({approx}1000-10 000 linewidths), trap depths of {approx}1 mK and trap frequencies of several to tens of kilohertz are achieved. Our results indicate that these dipole traps can be moved by tilting the incident laser beams without significantly changing the trap properties. We also explored the polarization dependence of these dipole traps. We developed a code that calculates the trapping potential energy for any magnetic substate of any hyperfine ground state of any alkali-metal atom for any laser detuning much smaller than the fine-structure splitting for any given electric field distribution. We describe details of our calculations and include a summary of different notations and conventions for the reduced matrix element and how to convert it to SI units. We applied this code to these traps and found a method for bringing two traps together and apart controllably without expelling the atoms from the trap and without significant tunneling probability between the traps. This approach can be scaled up to a two-dimensional array of many pinholes, forming a quantum memory with single-site addressability, in which pairs of atoms can be brought together and apart for two-qubit gates for quantum computing.« less

Slow positrons in the study of surface and near-surface defects

NASA Astrophysics Data System (ADS)

Lynn, K. G.

A general theoretical model is presented which includes the probability of a positron diffusing back to the surface after implantation, and thermalization in samples containing various defects. This model incorporates surface state and thermal desorption from this state, as well as reflection back into the bulk. With this model vacancy formation enthalpies, activation energies of positrons from surface states, and specific trapping rates are deduced from the positronium fraction data. An amorphous Al/sub x/O/sub y/ overlayer on Al is discussed as an example of trapping in overlayers. In well-annealed single crystal samples, the positron is shown to be freely diffusing at low temperatures, whereas in a neutron-irradiatied Al single crystal sample the positron is localized at low positron binding energy defects presumably created during irradiation.

Driven Bose-Hubbard model with a parametrically modulated harmonic trap

NASA Astrophysics Data System (ADS)

Mann, N.; Bakhtiari, M. Reza; Massel, F.; Pelster, A.; Thorwart, M.

2017-04-01

We investigate a one-dimensional Bose-Hubbard model in a parametrically driven global harmonic trap. The delicate interplay of both the local interaction of the atoms in the lattice and the driving of the global trap allows us to control the dynamical stability of the trapped quantum many-body state. The impact of the atomic interaction on the dynamical stability of the driven quantum many-body state is revealed in the regime of weak interaction by analyzing a discretized Gross-Pitaevskii equation within a Gaussian variational ansatz, yielding a Mathieu equation for the condensate width. The parametric resonance condition is shown to be modified by the atom interaction strength. In particular, the effective eigenfrequency is reduced for growing interaction in the mean-field regime. For a stronger interaction, the impact of the global parametric drive is determined by the numerically exact time-evolving block decimation scheme. When the trapped bosons in the lattice are in a Mott insulating state, the absorption of energy from the driving field is suppressed due to the strongly reduced local compressibility of the quantum many-body state. In particular, we find that the width of the local Mott region shows a breathing dynamics. Finally, we observe that the global modulation also induces an effective time-independent inhomogeneous hopping strength for the atoms.

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciurea, Magdalena Lidia, E-mail: ciurea@infim.ro; Lazanu, Sorina, E-mail: ciurea@infim.ro

2014-10-06

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increasemore » of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.« less

Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si

NASA Astrophysics Data System (ADS)

Ciurea, Magdalena Lidia; Lazanu, Sorina

2014-10-01

Multi-quantum well structures and Si wafers implanted with heavy iodine and bismuth ions are studied in order to evaluate the influence of stress on the parameters of trapping centers. The experimental method of thermostimullatedcurrents without applied bias is used, and the trapping centers are filled by illumination. By modeling the discharge curves, we found in multilayered structures the parameters of both 'normal' traps and 'stress-induced' ones, the last having a Gaussian-shaped temperature dependence of the cross section. The stress field due to the presence of stopped heavy ions implanted into Si was modeled by a permanent electric field. The increase of the strain from the neighborhood of I ions to the neighborhood of Bi ions produces the broadening of some energy levels and also a temperature dependence of the cross sections for all levels.

Bosonic anomalies, induced fractional quantum numbers, and degenerate zero modes: The anomalous edge physics of symmetry-protected topological states

NASA Astrophysics Data System (ADS)

Wang, Juven C.; Santos, Luiz H.; Wen, Xiao-Gang

2015-05-01

The boundary of symmetry-protected topological states (SPTs) can harbor new quantum anomaly phenomena. In this work, we characterize the bosonic anomalies introduced by the 1+1D non-onsite-symmetric gapless edge modes of (2+1)D bulk bosonic SPTs with a generic finite Abelian group symmetry (isomorphic to G =∏iZNi=ZN1×ZN2×ZN3×⋯ ). We demonstrate that some classes of SPTs (termed "Type II") trap fractional quantum numbers (such as fractional ZN charges) at the 0D kink of the symmetry-breaking domain walls, while some classes of SPTs (termed "Type III") have degenerate zero energy modes (carrying the projective representation protected by the unbroken part of the symmetry), either near the 0D kink of a symmetry-breaking domain wall, or on a symmetry-preserving 1D system dimensionally reduced from a thin 2D tube with a monodromy defect 1D line embedded. More generally, the energy spectrum and conformal dimensions of gapless edge modes under an external gauge flux insertion (or twisted by a branch cut, i.e., a monodromy defect line) through the 1D ring can distinguish many SPT classes. We provide a manifest correspondence from the physical phenomena, the induced fractional quantum number, and the zero energy mode degeneracy to the mathematical concept of cocycles that appears in the group cohomology classification of SPTs, thus achieving a concrete physical materialization of the cocycles. The aforementioned edge properties are formulated in terms of a long wavelength continuum field theory involving scalar chiral bosons, as well as in terms of matrix product operators and discrete quantum lattice models. Our lattice approach yields a regularization with anomalous non-onsite symmetry for the field theory description. We also formulate some bosonic anomalies in terms of the Goldstone-Wilczek formula.

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence

PubMed Central

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K. L.; Sum, Tze Chien; Huang, Wei

2017-01-01

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 1015 cm−3, defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence. PMID:28239146

Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence.

PubMed

Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K L; Sum, Tze Chien; Huang, Wei

2017-02-27

The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 10 15  cm -3 , defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence.

Ab initio theory of the N2V defect in diamond for quantum memory implementation

NASA Astrophysics Data System (ADS)

Udvarhelyi, Péter; Thiering, Gergő; Londero, Elisa; Gali, Adam

2017-10-01

The N2V defect in diamond is characterized by means of ab initio methods relying on density functional theory calculated parameters of a Hubbard model Hamiltonian. It is shown that this approach appropriately describes the energy levels of correlated excited states induced by this defect. By determining its critical magneto-optical parameters, we propose to realize a long-living quantum memory by N2V defect, i.e., H 3 color center in diamond.

Ion trap architectures and new directions

NASA Astrophysics Data System (ADS)

Siverns, James D.; Quraishi, Qudsia

2017-12-01

Trapped ion technology has seen advances in performance, robustness and versatility over the last decade. With increasing numbers of trapped ion groups worldwide, a myriad of trap architectures are currently in use. Applications of trapped ions include: quantum simulation, computing and networking, time standards and fundamental studies in quantum dynamics. Design of such traps is driven by these various research aims, but some universally desirable properties have lead to the development of ion trap foundries. Additionally, the excellent control achievable with trapped ions and the ability to do photonic readout has allowed progress on quantum networking using entanglement between remotely situated ion-based nodes. Here, we present a selection of trap architectures currently in use by the community and present their most salient characteristics, identifying features particularly suited for quantum networking. We also discuss our own in-house research efforts aimed at long-distance trapped ion networking.

Comprehensive Materials and Morphologies Study of Ion Traps (COMMIT) for Scalable Quantum Computation

DTIC Science & Technology

2012-04-21

the photoelectric effect. The typical shortest wavelengths needed for ion traps range from 194 nm for Hg+ to 493 nm for Ba +, corresponding to 6.4-2.5...REPORT Comprehensive Materials and Morphologies Study of Ion Traps (COMMIT) for scalable Quantum Computation - Final Report 14. ABSTRACT 16. SECURITY...CLASSIFICATION OF: Trapped ion systems, are extremely promising for large-scale quantum computation, but face a vexing problem, with motional quantum

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{supmore » 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.« less

Non-thermalization in trapped atomic ion spin chains

NASA Astrophysics Data System (ADS)

Hess, P. W.; Becker, P.; Kaplan, H. B.; Kyprianidis, A.; Lee, A. C.; Neyenhuis, B.; Pagano, G.; Richerme, P.; Senko, C.; Smith, J.; Tan, W. L.; Zhang, J.; Monroe, C.

2017-10-01

Linear arrays of trapped and laser-cooled atomic ions are a versatile platform for studying strongly interacting many-body quantum systems. Effective spins are encoded in long-lived electronic levels of each ion and made to interact through laser-mediated optical dipole forces. The advantages of experiments with cold trapped ions, including high spatio-temporal resolution, decoupling from the external environment and control over the system Hamiltonian, are used to measure quantum effects not always accessible in natural condensed matter samples. In this review, we highlight recent work using trapped ions to explore a variety of non-ergodic phenomena in long-range interacting spin models, effects that are heralded by the memory of out-of-equilibrium initial conditions. We observe long-lived memory in static magnetizations for quenched many-body localization and prethermalization, while memory is preserved in the periodic oscillations of a driven discrete time crystal state. This article is part of the themed issue 'Breakdown of ergodicity in quantum systems: from solids to synthetic matter'.

Non-thermalization in trapped atomic ion spin chains.

PubMed

Hess, P W; Becker, P; Kaplan, H B; Kyprianidis, A; Lee, A C; Neyenhuis, B; Pagano, G; Richerme, P; Senko, C; Smith, J; Tan, W L; Zhang, J; Monroe, C

2017-12-13

Linear arrays of trapped and laser-cooled atomic ions are a versatile platform for studying strongly interacting many-body quantum systems. Effective spins are encoded in long-lived electronic levels of each ion and made to interact through laser-mediated optical dipole forces. The advantages of experiments with cold trapped ions, including high spatio-temporal resolution, decoupling from the external environment and control over the system Hamiltonian, are used to measure quantum effects not always accessible in natural condensed matter samples. In this review, we highlight recent work using trapped ions to explore a variety of non-ergodic phenomena in long-range interacting spin models, effects that are heralded by the memory of out-of-equilibrium initial conditions. We observe long-lived memory in static magnetizations for quenched many-body localization and prethermalization, while memory is preserved in the periodic oscillations of a driven discrete time crystal state.This article is part of the themed issue 'Breakdown of ergodicity in quantum systems: from solids to synthetic matter'. © 2017 The Author(s).

Separation of Time Scales in a Quantum Newton’s Cradle

DOE PAGES

van den Berg, R.; Wouters, B.; Eliëns, S.; ...

2016-06-01

For strongly repulsive bosons in one dimension, we provide detailed modeling of the Bragg pulse used in quantum Newton's cradle-like settings or in Bragg spectroscopy experiments. By employing the Fermi-Bose mapping for a nite harmonically trapped gas and the Quench Action approach for a thermodynamic system on a ring, we reconstruct the exact post-pulse many-body time evolution of Lieb-Liniger gases in the Tonks-Girardeau limit, together with their changing local density pro le and momentum distribution. Our results display a clear separation of timescales between rapid and trap-insensitive relaxation immediately after the pulse, followed by slow in-trap periodic behaviour.

Electrical flicker-noise generated by filling and emptying of impurity states in injectors of quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamanishi, Masamichi, E-mail: masamiya@crl.hpk.co.jp; Hirohata, Tooru; Hayashi, Syohei

2014-11-14

Free running line-widths (>100 kHz), much broader than intrinsic line-widths ∼100 Hz, of existing quantum-cascade lasers are governed by strong flicker frequency-noise originating from electrical flicker noise. Understanding of microscopic origins of the electrical flicker noises in quantum-cascade lasers is crucially important for the reduction of strength of flicker frequency-noise without assistances of any type of feedback schemes. In this article, an ad hoc model that is based on fluctuating charge-dipoles induced by electron trappings and de-trappings at indispensable impurity states in injector super-lattices of a quantum-cascade laser is proposed, developing theoretical framework based on the model. The validity of the presentmore » model is evaluated by comparing theoretical voltage-noise power spectral densities based on the model with experimental ones obtained by using mid-infrared quantum-cascade lasers with designed impurity-positioning. The obtained experimental results on flicker noises, in comparison with the theoretical ones, shed light on physical mechanisms, such as the inherent one due to impurity states in their injectors and extrinsic ones due to surface states on the ridge-walls and due to residual deep traps, for electrical flicker-noise generation in existing mid-infrared quantum-cascade lasers. It is shown theoretically that quasi-delta doping of impurities in their injectors leads to strong suppression of electrical flicker noise by minimization of the dipole length at a certain temperature, for instance ∼300 K and, in turn, is expected to result in substantial narrowing of the free running line-width down below 10 kHz.« less

Experimental realization of universal geometric quantum gates with solid-state spins.

PubMed

Zu, C; Wang, W-B; He, L; Zhang, W-G; Dai, C-Y; Wang, F; Duan, L-M

2014-10-02

Experimental realization of a universal set of quantum logic gates is the central requirement for the implementation of a quantum computer. In an 'all-geometric' approach to quantum computation, the quantum gates are implemented using Berry phases and their non-Abelian extensions, holonomies, from geometric transformation of quantum states in the Hilbert space. Apart from its fundamental interest and rich mathematical structure, the geometric approach has some built-in noise-resilience features. On the experimental side, geometric phases and holonomies have been observed in thermal ensembles of liquid molecules using nuclear magnetic resonance; however, such systems are known to be non-scalable for the purposes of quantum computing. There are proposals to implement geometric quantum computation in scalable experimental platforms such as trapped ions, superconducting quantum bits and quantum dots, and a recent experiment has realized geometric single-bit gates in a superconducting system. Here we report the experimental realization of a universal set of geometric quantum gates using the solid-state spins of diamond nitrogen-vacancy centres. These diamond defects provide a scalable experimental platform with the potential for room-temperature quantum computing, which has attracted strong interest in recent years. Our experiment shows that all-geometric and potentially robust quantum computation can be realized with solid-state spin quantum bits, making use of recent advances in the coherent control of this system.

Retention and release of hydrogen isotopes in tungsten plasma-facing components: the role of grain boundaries and the native oxide layer from a joint experiment-simulation integrated approach

NASA Astrophysics Data System (ADS)

Hodille, E. A.; Ghiorghiu, F.; Addab, Y.; Založnik, A.; Minissale, M.; Piazza, Z.; Martin, C.; Angot, T.; Gallais, L.; Barthe, M.-F.; Becquart, C. S.; Markelj, S.; Mougenot, J.; Grisolia, C.; Bisson, R.

2017-07-01

Fusion fuel retention (trapping) and release (desorption) from plasma-facing components are critical issues for ITER and for any future industrial demonstration reactors such as DEMO. Therefore, understanding the fundamental mechanisms behind the retention of hydrogen isotopes in first wall and divertor materials is necessary. We developed an approach that couples dedicated experimental studies with modelling at all relevant scales, from microscopic elementary steps to macroscopic observables, in order to build a reliable and predictive fusion reactor wall model. This integrated approach is applied to the ITER divertor material (tungsten), and advances in the development of the wall model are presented. An experimental dataset, including focused ion beam scanning electron microscopy, isothermal desorption, temperature programmed desorption, nuclear reaction analysis and Auger electron spectroscopy, is exploited to initialize a macroscopic rate equation wall model. This model includes all elementary steps of modelled experiments: implantation of fusion fuel, fuel diffusion in the bulk or towards the surface, fuel trapping on defects and release of trapped fuel during a thermal excursion of materials. We were able to show that a single-trap-type single-detrapping-energy model is not able to reproduce an extended parameter space study of a polycrystalline sample exhibiting a single desorption peak. It is therefore justified to use density functional theory to guide the initialization of a more complex model. This new model still contains a single type of trap, but includes the density functional theory findings that the detrapping energy varies as a function of the number of hydrogen isotopes bound to the trap. A better agreement of the model with experimental results is obtained when grain boundary defects are included, as is consistent with the polycrystalline nature of the studied sample. Refinement of this grain boundary model is discussed as well as the inclusion in the model of a thin defective oxide layer following the experimental observation of the presence of an oxygen layer on the surface even after annealing to 1300 K.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

PubMed Central

Rossi, Alessandro; Tanttu, Tuomo; Hudson, Fay E.; Sun, Yuxin; Möttönen, Mikko; Dzurak, Andrew S.

2015-01-01

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization. PMID:26067215

Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

NASA Astrophysics Data System (ADS)

Schuster, Jonathan; Bellotti, Enrico

2013-06-01

We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

Quantum mechanics in rotating-radio-frequency traps and Penning traps with a quadrupole rotating field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abe, K.; Hasegawa, T.

2010-03-15

Quantum-mechanical analysis of ion motion in a rotating-radio-frequency (rrf) trap or in a Penning trap with a quadrupole rotating field is carried out. Rrf traps were introduced by Hasegawa and Bollinger [Phys. Rev. A 72, 043404 (2005)]. The classical motion of a single ion in this trap is described by only trigonometric functions, whereas in the conventional linear radio-frequency (rf) traps it is by the Mathieu functions. Because of the simple classical motion in the rrf trap, it is expected that the quantum-mechanical analysis of the rrf traps is also simple compared to that of the linear rf traps. Themore » analysis of Penning traps with a quadrupole rotating field is also possible in a way similar to the rrf traps. As a result, the Hamiltonian in these traps is the same as the two-dimensional harmonic oscillator, and energy levels and wave functions are derived as exact results. In these traps, it is found that one of the vibrational modes in the rotating frame can have negative energy levels, which means that the zero-quantum-number state (''ground'' state) is the highest energy state.« less

Coherent all-optical control of ultracold atoms arrays in permanent magnetic traps.

PubMed

Abdelrahman, Ahmed; Mukai, Tetsuya; Häffner, Hartmut; Byrnes, Tim

2014-02-10

We propose a hybrid architecture for quantum information processing based on magnetically trapped ultracold atoms coupled via optical fields. The ultracold atoms, which can be either Bose-Einstein condensates or ensembles, are trapped in permanent magnetic traps and are placed in microcavities, connected by silica based waveguides on an atom chip structure. At each trapping center, the ultracold atoms form spin coherent states, serving as a quantum memory. An all-optical scheme is used to initialize, measure and perform a universal set of quantum gates on the single and two spin-coherent states where entanglement can be generated addressably between spatially separated trapped ultracold atoms. This allows for universal quantum operations on the spin coherent state quantum memories. We give detailed derivations of the composite cavity system mediated by a silica waveguide as well as the control scheme. Estimates for the necessary experimental conditions for a working hybrid device are given.

Quantum simulations of the Ising model with trapped ions: Devil's staircase and arbitrary lattice proposal

NASA Astrophysics Data System (ADS)

Korenblit, Simcha

A collection of trapped atomic ions represents one of the most attractive platforms for the quantum simulation of interacting spin networks and quantum magnetism. Spin-dependent optical dipole forces applied to an ion crystal create long-range effective spin-spin interactions and allow the simulation of spin Hamiltonians that possess nontrivial phases and dynamics. We trap linear chains of 171Yb+ ions in a Paul trap, and constrain the occupation of energy levels to the ground hyperne clock-states, creating a qubit or pseudo-spin 1/2 system. We proceed to implement spin-spin couplings between two ions using the far detuned Molmer-Sorenson scheme and perform adiabatic quantum simulations of Ising Hamiltonians with long-range couplings. We then demonstrate our ability to control the sign and relative strength of the interaction between three ions. Using this control, we simulate a frustrated triangular lattice, and for the first time establish an experimental connection between frustration and quantum entanglement. We then scale up our simulation to show phase transitions from paramagnetism to ferromagnetism for nine ions, and to anti-ferromagnetism for sixteen ions. The experimental work culminates with our most complicated Hamiltonian---a long range anti-ferromagnetic Ising interaction between 10 ions with a biasing axial field. Theoretical work presented in this thesis shows how the approach to quantum simulation utilized in this thesis can be further extended and improved. It is shown how appropriate design of laser fields can provide for arbitrary multidimensional spin-spin interaction graphs even for the case of a linear spatial array of ions. This scheme uses currently existing trap technology and is scalable to levels where classical methods of simulation are intractable.

High-fidelity operations in microfabricated surface ion traps

NASA Astrophysics Data System (ADS)

Maunz, Peter

2017-04-01

Trapped ion systems can be used to implement quantum computation as well as quantum simulation. To scale these systems to the number of qubits required to solve interesting problems in quantum chemistry or solid state physics, the use of large multi-zone ion traps has been proposed. Microfabrication enables the realization of surface electrode ion traps with complex electrode structures. While these traps may enable the scaling of trapped ion quantum information processing (QIP), microfabricated ion traps also pose several technical challenges. Here, we present Sandia's trap fabrication capabilities and characterize trap properties and shuttling operations in our most recent high optical access trap (HOA-2). To demonstrate the viability of Sandia's microfabricated ion traps for QIP we realize robust single and two-qubit gates and characterize them using gate set tomography (GST). In this way we are able to demonstrate the first single qubit gates with a diamond norm of less than 1 . 7 ×10-4 , below a rigorous fault tolerance threshold for general noise of 6 . 7 ×10-4. Furthermore, we realize Mølmer-Sørensen two qubit gates with a process fidelity of 99 . 58(6) % also characterized by GST. These results demonstrate the viability of microfabricated surface traps for state of the art quantum information processing demonstrations. This research was funded, in part, by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA).

Fast separation of two trapped ions (Open Access, Publisher’s Version)

DTIC Science & Technology

2015-09-17

of quantum states and separation of ions in a dual rf ion trapQuantum Inf. Comput . 2 257 [10] KaufmannH, Ruster T, SchmiegelowCT, Schmidt-Kaler F...Ruschhaupt et al. Shortcuts to adiabaticity for an ion in a rotating radially-tight trap M Palmero, Shuo Wang, D Guéry-Odelin et al. Optimal shortcuts for...Kiely, J P L McGuinness, J G Muga et al. Quantum simulations with cold trapped ions Michael Johanning, Andrés F Varón and Christof Wunderlich Quantum

Technologies for Trapped-Ion Quantum Information Systems

DTIC Science & Technology

2016-03-21

mate- rials such as graphene and indium tin oxide, integrating devices like optical fibers and mirrors, and exploring alternative ion loading and...trapping techniques. Keywords ion traps · quantum computation · quantum information · trapped ions · ion-photon interface · graphene · indium tin oxide...displays are typically made of indium tin oxide (ITO), a material that is both an elec- trical and an optical conductor. However, using ITO electrodes

Evolution of displacement cascades in Fe-Cr structures with different [001] tilt grain boundaries

NASA Astrophysics Data System (ADS)

Abu-Shams, M.; Haider, W.; Shabib, I.

2017-06-01

Reduced-activation ferritic/martensitic steels of Cr concentration between 2.25 and 12 wt% are candidate structural materials for next-generation nuclear reactors. In this study, molecular dynamics (MD) simulation is used to generate the displacement cascades in Fe-Cr structures with different Cr concentrations by using different primary knock-on atom (PKA) energies between 2 and 10 keV. A concentration-dependent model potential has been used to describe the interactions between Fe and Cr. Single crystals (SCs) of three different coordinate bases (e.g. [310], [510], and [530]) and bi-crystal (BC) structures with three different [001] tilt grain boundaries (GBs) (e.g. Σ5, Σ13, and Σ17) have been simulated. The Wigner-Seitz cell criterion has been used to identify the produced Frenkel pairs. The results show a marked difference between collisions observed in SCs and those in BC structures. The numbers of vacancies and interstitials are found to be significantly higher in BC structures than those found in SCs. The number of point defects exhibits a power relationship with the PKA energies; however, the Cr concentration does not seem to have any influence on the number of survived point defects. In BC models, a large fraction of the total survived point defects (between 59% and 93%) tends accumulate at the GBs, which seem to trap the generated point defects. The BC structure with Σ17 GB is found to trap more defects than Σ5 and Σ13 GBs. The defect trapping is found to be dictated by the crystallographic parameters of the GBs. For all studied GBs, self-interstitial atoms (SIAs) are easily trapped within the GB region than vacancies. An analysis of defect composition reveals an enrichment of Cr in SIAs, and in BC cases, more than half of the Cr-SIAs are found to be located within the GB region.

Fast synthesize ZnO quantum dots via ultrasonic method.

PubMed

Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

2016-05-01

Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

Adiabatic quantum computation with neutral atoms via the Rydberg blockade

NASA Astrophysics Data System (ADS)

Goyal, Krittika; Deutsch, Ivan

2011-05-01

We study a trapped-neutral-atom implementation of the adiabatic model of quantum computation whereby the Hamiltonian of a set of interacting qubits is changed adiabatically so that its ground state evolves to the desired output of the algorithm. We employ the ``Rydberg blockade interaction,'' which previously has been used to implement two-qubit entangling gates in the quantum circuit model. Here it is employed via off-resonant virtual dressing of the excited levels, so that atoms always remain in the ground state. The resulting dressed-Rydberg interaction is insensitive to the distance between the atoms within a certain blockade radius, making this process robust to temperature and vibrational fluctuations. Single qubit interactions are implemented with global microwaves and atoms are locally addressed with light shifts. With these ingredients, we study a protocol to implement the two-qubit Quadratic Unconstrained Binary Optimization (QUBO) problem. We model atom trapping, addressing, coherent evolution, and decoherence. We also explore collective control of the many-atom system and generalize the QUBO problem to multiple qubits. We study a trapped-neutral-atom implementation of the adiabatic model of quantum computation whereby the Hamiltonian of a set of interacting qubits is changed adiabatically so that its ground state evolves to the desired output of the algorithm. We employ the ``Rydberg blockade interaction,'' which previously has been used to implement two-qubit entangling gates in the quantum circuit model. Here it is employed via off-resonant virtual dressing of the excited levels, so that atoms always remain in the ground state. The resulting dressed-Rydberg interaction is insensitive to the distance between the atoms within a certain blockade radius, making this process robust to temperature and vibrational fluctuations. Single qubit interactions are implemented with global microwaves and atoms are locally addressed with light shifts. With these ingredients, we study a protocol to implement the two-qubit Quadratic Unconstrained Binary Optimization (QUBO) problem. We model atom trapping, addressing, coherent evolution, and decoherence. We also explore collective control of the many-atom system and generalize the QUBO problem to multiple qubits. We acknowledge funding from the AQUARIUS project, Sandia National Laboratories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozlovski, V. V.; Lebedev, A. A.; Bogdanova, E. V.

The model of conductivity compensation in SiC under irradiation with high-energy electrons is presented. The following processes are considered to cause a decrease in the free carrier concentration: (i) formation of deep traps by intrinsic point defects, Frenkel pairs produced by irradiation; (ii) 'deactivation' of the dopant via formation of neutral complexes including a dopant atom and a radiation-induced point defect; and (iii) formation of deep compensating traps via generation of charged complexes constituted by a dopant atom and a radiation-induced point defect. To determine the compensation mechanism, dose dependences of the deep compensation of moderately doped SiC (CVD) undermore » electron irradiation have been experimentally studied. It is demonstrated that, in contrast to n-FZ-Si, moderately doped SiC (CVD) exhibits linear dependences (with a strongly nonlinear dependence observed for Si). Therefore, the conductivity compensation in silicon carbide under electron irradiation occurs due to deep traps formed by primary radiation defects (vacancies and interstitial atoms) in the silicon and carbon sublattices. It is known that the compensation in silicon is due to the formation of secondary radiation defects that include a dopant atom. It is shown that, in contrast to n-SiC (CVD), primary defects in only the carbon sublattice of moderately doped p-SiC (CVD) cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice or defects in both sublattices are responsible for the conductivity compensation.« less

Recent developments in trapping and manipulation of atoms with adiabatic potentials

NASA Astrophysics Data System (ADS)

Garraway, Barry M.; Perrin, Hélène

2016-09-01

A combination of static and oscillating magnetic fields can be used to ‘dress’ atoms with radio-frequency (RF), or microwave, radiation. The spatial variation of these fields can be used to create an enormous variety of traps for ultra-cold atoms and quantum gases. This article reviews the type and character of these adiabatic traps and the applications which include atom interferometry and the study of low-dimensional quantum systems. We introduce the main concepts of magnetic traps leading to adiabatic dressed traps. The concept of adiabaticity is discussed in the context of the Landau-Zener model. The first bubble trap experiment is reviewed together with the method used for loading it. Experiments based on atom chips show the production of double wells and ring traps. Dressed atom traps can be evaporatively cooled with an additional RF field, and a weak RF field can be used to probe the spectroscopy of the adiabatic potentials. Several approaches to ring traps formed from adiabatic potentials are discussed, including those based on atom chips, time-averaged adiabatic potentials and induction methods. Several proposals for adiabatic lattices with dressed atoms are also reviewed.

Trap-assisted large gain in Cu{sub 2}O/C{sub 60} hybrid ultraviolet/visible photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lan; Xi, Qiaoyue; Gao, Ge

2016-04-18

Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu{sub 2}O/C{sub 60} hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10{sup 4}% under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu{sub 2}O and C{sub 60} are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu{sub 2}O layers, which can trap photogenerated holes. Such trapped holesmore » will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C{sub 60} primarily acts as a light absorption media to provide free holes.« less

Topological entanglement entropy with a twist.

PubMed

Brown, Benjamin J; Bartlett, Stephen D; Doherty, Andrew C; Barrett, Sean D

2013-11-27

Defects in topologically ordered models have interesting properties that are reminiscent of the anyonic excitations of the models themselves. For example, dislocations in the toric code model are known as twists and possess properties that are analogous to Ising anyons. We strengthen this analogy by using the topological entanglement entropy as a diagnostic tool to identify properties of both defects and excitations in the toric code. Specifically, we show, through explicit calculation, that the toric code model including twists and dyon excitations has the same quantum dimensions, the same total quantum dimension, and the same fusion rules as an Ising anyon model.

In situ plasma removal of surface contaminants from ion trap electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haltli, Raymond A.

2015-05-01

In this thesis, the construction and implementation of an in situ plasma discharge designed to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results. In recent years, many advances have been made in using ion traps for quantum information processing. All of the criteria defined by DiVincenzo for using ion traps for implementing a quantum computer have been individually demonstrated, and in particular surface traps provide a scalable platform for ions. In order to be used for quantum algorithms, trapped ions need to be cooled to their motional (quantum mechanical) ground state. One ofmore » the hurdles in integrating surface ion traps for a quantum computer is minimizing electric field noise, which causes the ion to heat out of its motional ground state and which increases with smaller ion-to-electrode distances realized with surface traps. Surface contamination of trap electrodes is speculated to be the primary source of electric field noise. The main goal achieved by this work was to implement an in situ surface cleaning solution for surface electrode ion traps, which would not modify the ion trap electrode surface metal. Care was taken in applying the RF power in order to localize a plasma near the trap electrodes. A method for characterizing the energy of the plasma ions arriving at the ion trap surface is presented and results for plasma ion energies are shown. Finally, a method for quantifying the effectiveness of plasma cleaning of trap electrodes, using the surface analysis technique of X-ray photoelectron spectroscopy for measuring the amount and kind of surface contaminants, is described. A significant advantage of the trap electrode surface cleaning method presented here is the minimal changes necessary for implementation on a working ion trap experimental system.« less

A generalized Jaynes-Cummings model: The relativistic parametric amplifier and a single trapped ion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ojeda-Guillén, D., E-mail: dojedag@ipn.mx; Mota, R. D.; Granados, V. D.

2016-06-15

We introduce a generalization of the Jaynes-Cummings model and study some of its properties. We obtain the energy spectrum and eigenfunctions of this model by using the tilting transformation and the squeezed number states of the one-dimensional harmonic oscillator. As physical applications, we connect this new model to two important and novelty problems: the relativistic parametric amplifier and the quantum simulation of a single trapped ion.

Modelling deuterium release from tungsten after high flux high temperature deuterium plasma exposure

NASA Astrophysics Data System (ADS)

Grigorev, Petr; Matveev, Dmitry; Bakaeva, Anastasiia; Terentyev, Dmitry; Zhurkin, Evgeny E.; Van Oost, Guido; Noterdaeme, Jean-Marie

2016-12-01

Tungsten is a primary candidate for plasma facing materials for future fusion devices. An important safety concern in the design of plasma facing components is the retention of hydrogen isotopes. Available experimental data is vast and scattered, and a consistent physical model of retention of hydrogen isotopes in tungsten is still missing. In this work we propose a model of non-equilibrium hydrogen isotopes trapping under fusion relevant plasma exposure conditions. The model is coupled to a diffusion-trapping simulation tool and is used to interpret recent experiments involving high plasma flux exposures. From the computational analysis performed, it is concluded that high flux high temperature exposures (T = 1000 K, flux = 1024 D/m2/s and fluence of 1026 D/m2) result in generation of sub-surface damage and bulk diffusion, so that the retention is driven by both sub-surface plasma-induced defects (bubbles) and trapping at natural defects. On the basis of the non-equilibrium trapping model we have estimated the amount of H stored in the sub-surface region to be ∼10-5 at-1, while the bulk retention is about 4 × 10-7 at-1, calculated by assuming the sub-surface layer thickness of about 10 μm and adjusting the trap concentration to comply with the experimental results for the integral retention.

Thermal and Optical Characteristics of Defect Centers in Irradiated TLD-100 Dosimeters.

NASA Astrophysics Data System (ADS)

Sadeghi-Zamani, Hossein

Sensitivity loss of a sensitized LiF:Mg,Ti,Al (TLD-100) dosimeter subject to repeated standard 673 K thermal treatments has been a major problem in radiation dosimetry. The cause for this loss in radiation response of the dosimeters has not been understood. If a used TLD is not annealed at an elevated temperature prior to reuse, there are residual deep electron trap centers still present in the dosimeter. These defect centers will interact with new incoming radiation and produce thermoluminescent trap centers. This will introduce a significant error in low dose measurements. In this research, first, thermal and optical characteristics of various defect centers produced in an irradiated TLD-100 single crystal were investigated and then an improved pre-irradiation isothermal/optical treatment process was introduced to bleach the TLD dosimeters prior to reuse and reduce the loss of sensitivity of sensitized dosimeter. Thermoluminescent materials were irradiated by gamma-rays from Co-60 source to produce sufficient concentration of various defect centers, then the crystals were heated or exposed to UV light at different temperature to change the concentration of various defect centers. The change in concentration of each trap center was determined by measuring the change in absorbance of light at a fixed photon energy as a function of temperature. The thermal activation energy and the frequency factor for each trap center were evaluated assuming a first order kinetic model over a specified temperature range. The value of activation energy and the frequency factor for Z_2 ^', Z_2, Z_3, and F trap centers in TLD-100 single crystals were found to be 1.49 +/- 0.04 eV, 4.76 times 10 ^{15} sec^{ -1}, 2.23 +/- 0.02 eV, 1.65 times 10^{23 } sec^{-1}; 3.01 +/- 0.02 eV, 2.90 times 10^{17} sec ^{-1}; and 2.81 +/- 0.08 eV, 5.43 times 10 ^{17} sec^{ -1}; respectively. After a correlation was made between the trap centers and TL glow peaks, kinetic parameters obtained from absorption spectrum analysis were used to obtain a mathematical model describing different glow peaks.

Resonant quantum transitions in trapped antihydrogen atoms.

PubMed

Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Butler, E; Capra, A; Cesar, C L; Charlton, M; Deller, A; Donnan, P H; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Isaac, C A; Jonsell, S; Kurchaninov, L; Little, A; Madsen, N; McKenna, J T K; Menary, S; Napoli, S C; Nolan, P; Olchanski, K; Olin, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Shields, C R; Silveira, D M; Stracka, S; So, C; Thompson, R I; van der Werf, D P; Wurtele, J S

2012-03-07

The hydrogen atom is one of the most important and influential model systems in modern physics. Attempts to understand its spectrum are inextricably linked to the early history and development of quantum mechanics. The hydrogen atom's stature lies in its simplicity and in the accuracy with which its spectrum can be measured and compared to theory. Today its spectrum remains a valuable tool for determining the values of fundamental constants and for challenging the limits of modern physics, including the validity of quantum electrodynamics and--by comparison with measurements on its antimatter counterpart, antihydrogen--the validity of CPT (charge conjugation, parity and time reversal) symmetry. Here we report spectroscopy of a pure antimatter atom, demonstrating resonant quantum transitions in antihydrogen. We have manipulated the internal spin state of antihydrogen atoms so as to induce magnetic resonance transitions between hyperfine levels of the positronic ground state. We used resonant microwave radiation to flip the spin of the positron in antihydrogen atoms that were magnetically trapped in the ALPHA apparatus. The spin flip causes trapped anti-atoms to be ejected from the trap. We look for evidence of resonant interaction by comparing the survival rate of trapped atoms irradiated with microwaves on-resonance to that of atoms subjected to microwaves that are off-resonance. In one variant of the experiment, we detect 23 atoms that survive in 110 trapping attempts with microwaves off-resonance (0.21 per attempt), and only two atoms that survive in 103 attempts with microwaves on-resonance (0.02 per attempt). We also describe the direct detection of the annihilation of antihydrogen atoms ejected by the microwaves.

First-Principles Study of Native Defects in TlBr: Carrier Trapping, Compensation, and Polarization Phemomenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Mao-Hua

2010-01-01

First-principles calculations are carried out to study the native defect properties in TlBr. Three important results emerge: (1) the native defects are benign in terms of electron trapping because the low-energy defects do not induce electron traps; (2) the dominant defects in nearly stoichiometric TlBr are Schottky defects that pin the Fermi level near the midgap, leading to high resistivity; and (3) the calculated low diffusion barriers for several native defects show that ionic conductivity can occur at room temperature. The important impacts of these material properties on the room-temperature radiation detection using TlBr are discussed.

First-principles study of native defects in TlBr: Carrier trapping, compensation, and polarization phemomenon

NASA Astrophysics Data System (ADS)

Du, Mao-Hua

2010-09-01

First-principles calculations are carried out to study the native defect properties in TlBr. Three important results emerge: (1) the native defects are benign in terms of electron trapping because the low-energy defects do not induce electron traps; (2) the dominant defects in nearly stoichiometric TlBr are Schottky defects that pin the Fermi level near the midgap, leading to high resistivity; and (3) the calculated low diffusion barriers for several native defects show that ionic conductivity can occur at room temperature. The important impacts of these material properties on the room-temperature radiation detection using TlBr are discussed.

Disordered Quantum Gases and Spin-Dependent Lattices

DTIC Science & Technology

2013-07-07

regarding the role of disorder in many-particle quantum systems, such as superconductors and electronic solids. These issues are of great technological...REPORT Disordered Quantum Gases and Spin-Dependent Lattices 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: This grant supported the first realization of...the disordered Bose-Hubbard models using ultra-cold atoms trapped in a disordered optical lattice. Several critical questions regarding this crucial

Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the deep strong coupling regime

NASA Astrophysics Data System (ADS)

Puebla, Ricardo; Casanova, Jorge; Plenio, Martin B.

2018-03-01

The dynamics of the quantum Rabi model (QRM) in the deep strong coupling regime is theoretically analyzed in a trapped-ion set-up. Recognizably, the main hallmark of this regime is the emergence of collapses and revivals, whose faithful observation is hindered under realistic magnetic dephasing noise. Here, we discuss how to attain a faithful implementation of the QRM in the deep strong coupling regime which is robust against magnetic field fluctuations and at the same time provides a large tunability of the simulated parameters. This is achieved by combining standing wave laser configuration with continuous dynamical decoupling. In addition, we study the role that amplitude fluctuations play to correctly attain the QRM using the proposed method. In this manner, the present work further supports the suitability of continuous dynamical decoupling techniques in trapped-ion settings to faithfully realize different interacting dynamics.

A Quantum Non-Demolition Parity measurement in a mixed-species trapped-ion quantum processor

NASA Astrophysics Data System (ADS)

Marinelli, Matteo; Negnevitsky, Vlad; Lo, Hsiang-Yu; Flühmann, Christa; Mehta, Karan; Home, Jonathan

2017-04-01

Quantum non-demolition measurements of multi-qubit systems are an important tool in quantum information processing, in particular for syndrome extraction in quantum error correction. We have recently demonstrated a protocol for quantum non-demolition measurement of the parity of two beryllium ions by detection of a co-trapped calcium ion. The measurement requires a sequence of quantum gates between the three ions, using mixed-species gates between beryllium hyperfine qubits and a calcium optical qubit. Our work takes place in a multi-zone segmented trap setup in which we have demonstrated high fidelity control of both species and multi-well ion shuttling. The advantage of using two species of ion is that we can individually manipulate and read out the state of each ion species without disturbing the internal state of the other. The methods demonstrated here can be used for quantum error correcting codes as well as quantum metrology and are key ingredients for realizing a hybrid universal quantum computer based on trapped ions. Mixed-species control may also enable the investigation of new avenues in quantum simulation and quantum state control. left the group and working in a company now.

Metastable self-trapping of positrons in MgO

NASA Astrophysics Data System (ADS)

Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

1997-01-01

Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

Quantum information processing with trapped ions

NASA Astrophysics Data System (ADS)

Gaebler, John

2013-03-01

Trapped ions are one promising architecture for scalable quantum information processing. Ion qubits are held in multizone traps created from segmented arrays of electrodes and transported between trap zones using time varying electric potentials applied to the electrodes. Quantum information is stored in the ions' internal hyperfine states and quantum gates to manipulate the internal states and create entanglement are performed with laser beams and microwaves. Recently we have made progress in speeding up the ion transport and cooling processes that were the limiting tasks for the operation speed in previous experiments. We are also exploring improved two-qubit gates and new methods for creating ion entanglement. This work was supported by IARPA, ARO contract No. EAO139840, ONR and the NIST Quantum Information Program

Oxford ion-trap quantum computing project.

PubMed

Lucas, D M; Donald, C J S; Home, J P; McDonnell, M J; Ramos, A; Stacey, D N; Stacey, J-P; Steane, A M; Webster, S C

2003-07-15

We describe recent progress in the development of an ion-trap quantum information processor. We discuss the choice of ion species and describe recent experiments on read-out for a ground-state qubit and photoionization trap loading.

Quantum Dots' Photo-luminescence Line Shape Modeling

NASA Astrophysics Data System (ADS)

Hua, Muchuan; Decca, Ricardo

Two usual phenomena observed in quantum dots (QDs) photo-luminescence (PL) spectra are line broadening and energy shift between absorption and emission peaks. They have been attributed to electron-phonon coupling and surface trapping during the PL process. Although many qualitative work describing these phenomena has been carried out, quantitative results are far less common. In this work, a semi-empirical model is introduced to simulate steady state QDs' PL processes at room temperature. It was assumed that the vast majority of radiative recombination happens from surface trapped states. Consequently, the PL line shape should be highly modulated by transition rates between states in the conduction band and between them and surface trapping states. CdSe/ZnS (core/shell) colloidal QD samples with different sizes were used to examine the model. The model was able to successfully reproduce the PL spectra of these samples even when the excitation happens within the emission spectra, giving raise to up-conversion events. This model might help understand and make more precise predictions of QDs' PL spectra and could also aid on the design of QDs' optical devices.

Experimental quantum simulations of many-body physics with trapped ions.

PubMed

Schneider, Ch; Porras, Diego; Schaetz, Tobias

2012-02-01

Direct experimental access to some of the most intriguing quantum phenomena is not granted due to the lack of precise control of the relevant parameters in their naturally intricate environment. Their simulation on conventional computers is impossible, since quantum behaviour arising with superposition states or entanglement is not efficiently translatable into the classical language. However, one could gain deeper insight into complex quantum dynamics by experimentally simulating the quantum behaviour of interest in another quantum system, where the relevant parameters and interactions can be controlled and robust effects detected sufficiently well. Systems of trapped ions provide unique control of both the internal (electronic) and external (motional) degrees of freedom. The mutual Coulomb interaction between the ions allows for large interaction strengths at comparatively large mutual ion distances enabling individual control and readout. Systems of trapped ions therefore exhibit a prominent system in several physical disciplines, for example, quantum information processing or metrology. Here, we will give an overview of different trapping techniques of ions as well as implementations for coherent manipulation of their quantum states and discuss the related theoretical basics. We then report on the experimental and theoretical progress in simulating quantum many-body physics with trapped ions and present current approaches for scaling up to more ions and more-dimensional systems.

Enhanced Luminescent Stability through Particle Interactions in Silicon Nanocrystal Aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Joseph B.; Dandu, Naveen; Velizhanin, Kirill A.

2015-10-27

Close-packed assemblies of ligand-passivated colloidal nanocrystals can exhibit enhanced photoluminescent stability, but the origin of this effect is unclear. Here, we use experiment, simulation, and ab initio computation to examine the influence of interparticle interactions on the photoluminescent stability of silicon nanocrystal aggregates. The time-dependent photoluminescence emitted by structures ranging in size from a single quantum dot to agglomerates of more than a thousand is compared with Monte Carlo simulations of noninteracting ensembles using measured single-particle blinking data as input. In contrast to the behavior typically exhibited by the metal chalcogenides, the measured photoluminescent stability shows an enhancement with respectmore » to the noninteracting scenario with increasing aggregate size. We model this behavior using time-dependent density functional theory calculations of energy transfer between neighboring nanocrystals as a function of nanocrystal size, separation, and the presence of charge and/or surface-passivation defects. Our results suggest that rapid exciton transfer from “bright” nanocrystals to surface trap states in nearest-neighbors can efficiently fill such traps and enhance the stability of emission by promoting the radiative recombination of slowly diffusing excited electrons.« less

Effect of organic materials used in the synthesis on the emission from CdSe quantum dots

NASA Astrophysics Data System (ADS)

Lee, Jae-Won; Yang, Ho-Soon; Hong, K. S.; Kim, S. M.

2013-12-01

Quantum-dot nanocrystals have particular optical properties due to the quantum confinement effect and the surface effect. This study focuses on the effect of surface conditions on the emission from quantum dots. The quantum dots prepared with 1-hexadecylamine (HDA) in the synthesis show strong emission while the quantum dots prepared without HDA show weak emission, as well as emission from surface energy traps. The comparison of the X-ray patterns of these two sets of quantum dots reveals that HDA forms a layer on the surface of quantum dot during the synthesis. This surface passivation with a layer of HDA reduces surface energy traps, therefore the emission from surface trap levels is suppressed in the quantum dots synthesized with HDA.

Quantum Dynamics of H2 Trapped within Organic Clathrate Cages

NASA Astrophysics Data System (ADS)

Strobel, Timothy A.; Ramirez-Cuesta, Anibal J.; Daemen, Luke L.; Bhadram, Venkata S.; Jenkins, Timothy A.; Brown, Craig M.; Cheng, Yongqiang

2018-03-01

The rotational and translational dynamics of molecular hydrogen trapped within β -hydroquinone clathrate (H2 @β -HQ)—a practical example of a quantum particle trapped within an anisotropic confining potential—were investigated using inelastic neutron scattering and Raman spectroscopy. High-resolution vibrational spectra, including those collected from the VISION spectrometer at Oak Ridge National Laboratory, indicate relatively strong attractive interaction between guest and host with a strikingly large splitting of rotational energy levels compared with similar guest-host systems. Unlike related molecular systems in which confined H2 exhibits nearly free rotation, the behavior of H2 @β -HQ is explained using a two-dimensional (2D) hindered rotor model with barrier height more than 2 times the rotational constant (-16.2 meV ).

Quantum Bose-Hubbard model with an evolving graph as a toy model for emergent spacetime

NASA Astrophysics Data System (ADS)

Hamma, Alioscia; Markopoulou, Fotini; Lloyd, Seth; Caravelli, Francesco; Severini, Simone; Markström, Klas

2010-05-01

We present a toy model for interacting matter and geometry that explores quantum dynamics in a spin system as a precursor to a quantum theory of gravity. The model has no a priori geometric properties; instead, locality is inferred from the more fundamental notion of interaction between the matter degrees of freedom. The interaction terms are themselves quantum degrees of freedom so that the structure of interactions and hence the resulting local and causal structures are dynamical. The system is a Hubbard model where the graph of the interactions is a set of quantum evolving variables. We show entanglement between spatial and matter degrees of freedom. We study numerically the quantum system and analyze its entanglement dynamics. We analyze the asymptotic behavior of the classical model. Finally, we discuss analogues of trapped surfaces and gravitational attraction in this simple model.

The Particle inside a Ring: A Two-Dimensional Quantum Problem Visualized by Scanning Tunneling Microscopy

ERIC Educational Resources Information Center

Ellison, Mark D.

2008-01-01

The one-dimensional particle-in-a-box model used to introduce quantum mechanics to students suffers from a tenuous connection to a real physical system. This article presents a two-dimensional model, the particle confined within a ring, that directly corresponds to observations of surface electrons in a metal trapped inside a circular barrier.…

Adjustable Spin-Spin Interaction with 171Yb+ ions and Addressing of a Quantum Byte

NASA Astrophysics Data System (ADS)

Wunderlich, Christof

2015-05-01

Trapped atomic ions are a well-advanced physical system for investigating fundamental questions of quantum physics and for quantum information science and its applications. When contemplating the scalability of trapped ions for quantum information science one notes that the use of laser light for coherent operations gives rise to technical and also physical issues that can be remedied by replacing laser light by microwave (MW) and radio-frequency (RF) radiation employing suitably modified ion traps. Magnetic gradient induced coupling (MAGIC) makes it possible to coherently manipulate trapped ions using exclusively MW and RF radiation. After introducing the general concept of MAGIC, I shall report on recent experimental progress using 171Yb+ ions, confined in a suitable Paul trap, as effective spin-1/2 systems interacting via MAGIC. Entangling gates between non-neighbouring ions will be presented. The spin-spin coupling strength is variable and can be adjusted by variation of the secular trap frequency. In general, executing a quantum gate with a single qubit, or a subset of qubits, affects the quantum states of all other qubits. This reduced fidelity of the whole quantum register may preclude scalability. We demonstrate addressing of individual qubits within a quantum byte (eight qubits interacting via MAGIC) using MW radiation and measure the error induced in all non-addressed qubits (cross-talk) associated with the application of single-qubit gates. The measured cross-talk is on the order 10-5 and therefore below the threshold commonly agreed sufficient to efficiently realize fault-tolerant quantum computing. Furthermore, experimental results on continuous and pulsed dynamical decoupling (DD) for protecting quantum memories and quantum gates against decoherence will be briefly discussed. Finally, I report on using continuous DD to realize a broadband ultrasensitive single-atom magnetometer.

Geometric Defects in Quantum Hall States

NASA Astrophysics Data System (ADS)

Gromov, Andrey

I will describe a geometric analogue of Laughlin quasiholes in fractional quantum Hall (FQH) states. These ``quasiholes'' are generated by an insertion of quantized fluxes of curvature - which can be modeled by branch points of a certain Riemann surface - and, consequently, are related to genons. Unlike quasiholes, the genons are not excitations, but extrinsic defects. Fusion of genons describes the response of an FQH state to a process that changes (effective) topology of the physical space. These defects are abelian for IQH states and non-abelian for FQH states. I will explain how to calculate an electric charge, geometric spin and adiabatic mutual statistics of the these defects. Leo Kadanoff Fellowship.

Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun

2017-04-01

We propose a model that describes the operation characteristics of a two-dimensional electron gas (2DEG) in a monolayer transition-metal dichalcogenide thin-film transistor (TFT) having trapped charges near the channel interface. We calculate the drift mobility of the carriers scattered by charged defects located in the channel or near the channel interfaces. The calculated drift mobility is a function of the 2DEG areal density of interface traps. Finally, we calculate the model transfer (ID-VG S ) and output (ID-VS D ) characteristics and verify them by comparing with the experimental results performed with monolayer MoS2 TFTs. We find the modeled results to be excellently consistent with the experiments. This proposed model can be utilized for measuring the interface-trapped charge and trap site densities from the measured transfer curves directly, avoiding more complicated and expensive measurement methods.

Hybrid quantum systems with trapped charged particles

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Simmonds, Raymond W.; Leibfried, Dietrich; Wineland, David J.

2017-02-01

Trapped charged particles have been at the forefront of quantum information processing (QIP) for a few decades now, with deterministic two-qubit logic gates reaching record fidelities of 99.9 % and single-qubit operations of much higher fidelity. In a hybrid system involving trapped charges, quantum degrees of freedom of macroscopic objects such as bulk acoustic resonators, superconducting circuits, or nanomechanical membranes, couple to the trapped charges and ideally inherit the coherent properties of the charges. The hybrid system therefore implements a "quantum transducer," where the quantum reality (i.e., superpositions and entanglement) of small objects is extended to include the larger object. Although a hybrid quantum system with trapped charges could be valuable both for fundamental research and for QIP applications, no such system exists today. Here we study theoretically the possibilities of coupling the quantum-mechanical motion of a trapped charged particle (e.g., an ion or electron) to the quantum degrees of freedom of superconducting devices, nanomechanical resonators, and quartz bulk acoustic wave resonators. For each case, we estimate the coupling rate between the charged particle and its macroscopic counterpart and compare it to the decoherence rate, i.e., the rate at which quantum superposition decays. A hybrid system can only be considered quantum if the coupling rate significantly exceeds all decoherence rates. Our approach is to examine specific examples by using parameters that are experimentally attainable in the foreseeable future. We conclude that hybrid quantum systems involving a single atomic ion are unfavorable compared with the use of a single electron because the coupling rates between the ion and its counterpart are slower than the expected decoherence rates. A system based on trapped electrons, on the other hand, might have coupling rates that significantly exceed decoherence rates. Moreover, it might have appealing properties such as fast entangling gates, long coherence, and flexible topology that is fully electronic in nature. Realizing such a system, however, is technologically challenging because it requires accommodating both a trapping technology and superconducting circuitry in a compatible manner. We review some of the challenges involved, such as the required trap parameters, electron sources, electrical circuitry, and cooling schemes in order to promote further investigations towards the realization of such a hybrid system.

A Scalable Microfabricated Ion Trap for Quantum Information Processing

NASA Astrophysics Data System (ADS)

Maunz, Peter; Haltli, Raymond; Hollowell, Andrew; Lobser, Daniel; Mizrahi, Jonathan; Rembetski, John; Resnick, Paul; Sterk, Jonathan D.; Stick, Daniel L.; Blain, Matthew G.

2016-05-01

Trapped Ion Quantum Information Processing (QIP) relies on complex microfabricated trap structures to enable scaling of the number of quantum bits. Building on previous demonstrations of surface-electrode ion traps, we have designed and characterized the Sandia high-optical-access (HOA-2) microfabricated ion trap. This trap features high optical access, high trap frequencies, low heating rates, and negligible charging of dielectric trap components. We have observed trap lifetimes of more than 100h, measured trap heating rates for ytterbium of less than 40quanta/s, and demonstrated shuttling of ions from a slotted to an above surface region and through a Y-junction. Furthermore, we summarize demonstrations of high-fidelity single and two-qubit gates realized in this trap. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000. This work was supported by the Intelligence Advanced Research Projects Activity (IARPA).

Towards Quantum Simulations Using a Chip Ion Trap

NASA Astrophysics Data System (ADS)

Cao, Chenglin; Wright, Ken; Brennan, Daniel; Ji, Geoffrey; Monroe, Christopher

2013-05-01

We report our current experimental progress towards using chip ion traps for quantum simulation. Current progress is being made using a micro-fabricated symmetric trap from GTRI. This trap implements a novel two level design that combines the benefits of both surface traps and linear four-rod traps. The trap has 50 electrodes which allow for the fine control of the DC potential needed to create large anharmonic potentials, to join and split ion chains and to shuttle ions along the trapping axis similar to many surface traps. However this trap also has a much deeper trapping depth than conventional surface traps and improved optical access via an angled slot through the chip wide enough to accommodate higher power laser light which could cause surface charging or damage in a traditional chip trap. These advantages should allow trapping of long ion chains. We hope to use these features as the next step in increasing the size of current quantum simulations being done at Univ of Maryland, which are aimed at exploring quantum phenomena in spin systems in a regime inaccessible to classical simulation. This work is supported by grants from the U.S. Army Research Office with funding from the DARPA OLE program, IARPA, and the MURI program; and the NSF Physics Frontier Center at JQI. We acknowledge the GTRI team of J. Amini, K. Brown, A. Harter, F. Shaikh, R. Slusher, and C. Volin for the fabrication of the trap.

PAL spectroscopy of rare-earth doped Ga-Ge-Te/Se glasses

NASA Astrophysics Data System (ADS)

Shpotyuk, Ya.; Ingram, A.; Shpotyuk, O.

2016-04-01

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga-Ge-Te/Se cut-section exemplified by glassy Ga10Ge15Te75 and Ga10Ge15Te72Se3 doped with 500 ppm of Tb3+ or Pr3+. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ2 at the cost of more strong decrease in I2 intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.

Quantum Hall signatures of dipolar Mahan excitons

NASA Astrophysics Data System (ADS)

Schinner, G. J.; Repp, J.; Kowalik-Seidl, K.; Schubert, E.; Stallhofer, M. P.; Rai, A. K.; Reuter, D.; Wieck, A. D.; Govorov, A. O.; Holleitner, A. W.; Kotthaus, J. P.

2013-01-01

We explore the photoluminescence of spatially indirect, dipolar Mahan excitons in a gated double quantum well diode containing a mesoscopic electrostatic trap for neutral dipolar excitons at low temperatures down to 250 mK and in quantizing magnetic fields. Mahan excitons in the surrounding of the trap, consisting of individual holes interacting with a degenerate two-dimensional electron system confined in one of the quantum wells, exhibit strong quantum Hall signatures at integer filling factors and related anomalies around filling factor ν=(2)/(3),(3)/(5), and (1)/(2), reflecting the formation of composite fermions. Interactions across the trap perimeter are found to influence the energy of the confined neutral dipolar excitons by the presence of the quantum Hall effects in the two-dimensional electron system surrounding the trap.

Ion Trap Quantum Computing

DTIC Science & Technology

2011-12-01

quantum computer architecture schemes, but there are several problems that will be discussed later. 15 IV. ION TRAPS Wolfgang Paul was the first...famous physics experiment [62]. Wolfgang Paul demonstrated a similar apparatus during his Nobel Prize speech [63]. This device is hyperbolic-parabolic...Although it does not apply to linear traps, it is useful to understand the interaction between the Coulomb force and the repulsive quantum-mechanical Pauli

Quantum information processing between different atomic ions

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Zheng, Bo; Zhang, Junhua; Um, Mark; An, Shuoming; Zhao, Tianji; Duan, Luming; Kim, Kihwan

2012-06-01

There is increasing interest in utilizing and combining the advantages of different quantum systems. Here, we discuss the experimental generation of entanglement between the quantum states of different atomic ions through the Coulomb interaction at the same linear radio-frequency trap. This scheme would be extended to implement the teleportation of quantum information from one kind of atom to the other. Moreover, the hybrid system of trapped ions is expected to play an essential role in the realization of a large quantum system, where a quantum state of one species is used for quantum operation and that of the other is for the cooling and stabilization of the whole ion chain. Finally, we will report the experimental progress on building the hybrid trapped ion system.

Generation of large coherent states by bang–bang control of a trapped-ion oscillator

PubMed Central

Alonso, J.; Leupold, F. M.; Solèr, Z. U.; Fadel, M.; Marinelli, M.; Keitch, B. C.; Negnevitsky, V.; Home, J. P.

2016-01-01

Fast control of quantum systems is essential to make use of quantum properties before they degrade by decoherence. This is important for quantum-enhanced information processing, as well as for pushing quantum systems towards the boundary between quantum and classical physics. ‘Bang–bang' control attains the ultimate speed limit by making large changes to control fields much faster than the system can respond, but is often challenging to implement experimentally. Here we demonstrate bang–bang control of a trapped-ion oscillator using nanosecond switching of the trapping potentials. We perform controlled displacements with which we realize coherent states with up to 10,000 quanta of energy. We use these displaced states to verify the form of the ion-light interaction at high excitations far outside the usual regime of operation. These methods provide new possibilities for quantum-state manipulation and generation, alongside the potential for a significant increase in operational clock speed for trapped-ion quantum information processing. PMID:27046513

Structure, dynamics and bifurcations of discrete solitons in trapped ion crystals

NASA Astrophysics Data System (ADS)

Landa, H.; Reznik, B.; Brox, J.; Mielenz, M.; Schaetz, T.

2013-09-01

We study discrete solitons (kinks) accessible in the state-of-the-art trapped ion experiments, considering zigzag crystals and quasi-three-dimensional configurations, both theoretically and experimentally. We first extend the theoretical understanding of different phenomena predicted and recently experimentally observed in the structure and dynamics of these topological excitations. Employing tools from topological degree theory, we analyze bifurcations of crystal configurations in dependence on the trapping parameters, and investigate the formation of kink configurations and the transformations of kinks between different structures. This allows us to accurately define and calculate the effective potential experienced by solitons within the Wigner crystal, and study how this (so-called Peierls-Nabarro) potential gets modified to a non-periodic globally trapping potential in certain parameter regimes. The kinks' rest mass (energy) and spectrum of modes are computed and the dynamics of linear and nonlinear kink oscillations are analyzed. We also present novel, experimentally observed, configurations of kinks incorporating a large-mass defect realized by an embedded molecular ion, and of pairs of interacting kinks stable for long times, offering the perspective for exploring and exploiting complex collective nonlinear excitations, controllable on the quantum level.

Versatile microwave-driven trapped ion spin system for quantum information processing

PubMed Central

Piltz, Christian; Sriarunothai, Theeraphot; Ivanov, Svetoslav S.; Wölk, Sabine; Wunderlich, Christof

2016-01-01

Using trapped atomic ions, we demonstrate a tailored and versatile effective spin system suitable for quantum simulations and universal quantum computation. By simply applying microwave pulses, selected spins can be decoupled from the remaining system and, thus, can serve as a quantum memory, while simultaneously, other coupled spins perform conditional quantum dynamics. Also, microwave pulses can change the sign of spin-spin couplings, as well as their effective strength, even during the course of a quantum algorithm. Taking advantage of the simultaneous long-range coupling between three spins, a coherent quantum Fourier transform—an essential building block for many quantum algorithms—is efficiently realized. This approach, which is based on microwave-driven trapped ions and is complementary to laser-based methods, opens a new route to overcoming technical and physical challenges in the quest for a quantum simulator and a quantum computer. PMID:27419233

Dissipative quantum error correction and application to quantum sensing with trapped ions.

PubMed

Reiter, F; Sørensen, A S; Zoller, P; Muschik, C A

2017-11-28

Quantum-enhanced measurements hold the promise to improve high-precision sensing ranging from the definition of time standards to the determination of fundamental constants of nature. However, quantum sensors lose their sensitivity in the presence of noise. To protect them, the use of quantum error-correcting codes has been proposed. Trapped ions are an excellent technological platform for both quantum sensing and quantum error correction. Here we present a quantum error correction scheme that harnesses dissipation to stabilize a trapped-ion qubit. In our approach, always-on couplings to an engineered environment protect the qubit against spin-flips or phase-flips. Our dissipative error correction scheme operates in a continuous manner without the need to perform measurements or feedback operations. We show that the resulting enhanced coherence time translates into a significantly enhanced precision for quantum measurements. Our work constitutes a stepping stone towards the paradigm of self-correcting quantum information processing.

Symmetry breaking, Josephson oscillation and self-trapping in a self-bound three-dimensional quantum ball.

PubMed

Adhikari, S K

2017-11-22

We study spontaneous symmetry breaking (SSB), Josephson oscillation, and self-trapping in a stable, mobile, three-dimensional matter-wave spherical quantum ball self-bound by attractive two-body and repulsive three-body interactions. The SSB is realized by a parity-symmetric (a) one-dimensional (1D) double-well potential or (b) a 1D Gaussian potential, both along the z axis and no potential along the x and y axes. In the presence of each of these potentials, the symmetric ground state dynamically evolves into a doubly-degenerate SSB ground state. If the SSB ground state in the double well, predominantly located in the first well (z > 0), is given a small displacement, the quantum ball oscillates with a self-trapping in the first well. For a medium displacement one encounters an asymmetric Josephson oscillation. The asymmetric oscillation is a consequence of SSB. The study is performed by a variational and a numerical solution of a non-linear mean-field model with 1D parity-symmetric perturbations.

(3 + 1)-dimensional topological phases and self-dual quantum geometries encoded on Heegaard surfaces

NASA Astrophysics Data System (ADS)

Dittrich, Bianca

2017-05-01

We apply the recently suggested strategy to lift state spaces and operators for (2 + 1)-dimensional topological quantum field theories to state spaces and operators for a (3 + 1)-dimensional TQFT with defects. We start from the (2 + 1)-dimensional TuraevViro theory and obtain a state space, consistent with the state space expected from the Crane-Yetter model with line defects.

Structural Defects in Donor-Acceptor Blends: Influence on the Performance of Organic Solar Cells

NASA Astrophysics Data System (ADS)

Sergeeva, Natalia; Ullbrich, Sascha; Hofacker, Andreas; Koerner, Christian; Leo, Karl

2018-02-01

Defects play an important role in the performance of organic solar cells. The investigation of trap states and their origin can provide ways to further improve their performance. Here, we investigate defects in a system composed of the small-molecule oligothiophene derivative DCV5T-Me blended with C60 , which shows power conversion efficiencies above 8% when used in a solar cell. From a reconstruction of the density of trap states by impedance spectroscopy, we obtain a Gaussian distribution of trap states with Et=470 meV below the electron transport level, Nt=8 ×1014 cm-3 , and σt=41 meV . From Voc vs illumination intensity and open-circuit corrected charge carrier extraction measurements, we find that these defects lead to trap-assisted recombination. Moreover, drift-diffusion simulations show that the trap states decrease the fill factor by 10%. By conducting degradation measurements and varying the blend ratio, we find that the observed trap states are structural defects in the C60 phase due to the distortion of the natural morphology induced by the mixing.

Optimal Power and Efficiency of Quantum Thermoacoustic Micro-cycle Working in 1D Harmonic Trap

NASA Astrophysics Data System (ADS)

E, Qing; Wu, Feng; Yin, Yong; Liu, XiaoWei

2017-10-01

Thermoacoustic engines (including heat engines and refrigerators) are energy conversion devices without moving part. They have great potential in aviation, new energy utilization, power technology, refrigerating and cryogenics. The thermoacoustic parcels, which compose the working fluid of a thermoacoustic engine, oscillate within the sound channel with a temperature gradient. The thermodynamic foundation of a thermoacoustic engine is the thermoacoustic micro-cycle (TAMC). In this paper, the theory of quantum mechanics is applied to the study of the actual thermoacoustic micro-cycle for the first time. A quantum mechanics model of the TAMC working in a 1D harmonic trap, which is named as a quantum thermoacoustic micro-cycle (QTAMC), is established. The QTAMC is composed of two constant force processes connected by two straight line processes. Analytic expressions of the power output and the efficiency for QTAMC have been derived. The effects of the trap width and the temperature amplitude on the power output and the thermal efficiency have been discussed. Some optimal characteristic curves of power output versus efficiency are plotted, and then the optimization region of QTAMC is given in this paper. The results obtained here not only enrich the thermoacoustic theory but also expand the application of quantum thermodynamics.

Fused Silica Ion Trap Chip with Efficient Optical Collection System for Timekeeping, Sensing, and Emulation

DTIC Science & Technology

2015-01-22

applications in fast single photon sources, quantum repeater circuitry, and high fidelity remote entanglement of atoms for quantum information protocols. We...fluorescence for motion/force sensors through Doppler velocimetry; and for the efficient collection of single photons from trapped ions for...Doppler velocimetry; and for the efficient collection of single photons from trapped ions for applications in fast single photon sources, quantum

Modular Universal Scalable Ion-trap Quantum Computer

DTIC Science & Technology

2016-06-02

SECURITY CLASSIFICATION OF: The main goal of the original MUSIQC proposal was to construct and demonstrate a modular and universally- expandable ion...Distribution Unlimited UU UU UU UU 02-06-2016 1-Aug-2010 31-Jan-2016 Final Report: Modular Universal Scalable Ion-trap Quantum Computer The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 Ion trap quantum computation, scalable modular architectures REPORT DOCUMENTATION PAGE 11

Dynamic trapping near a quantum critical point

NASA Astrophysics Data System (ADS)

Kolodrubetz, Michael; Katz, Emanuel; Polkovnikov, Anatoli

2015-02-01

The study of dynamics in closed quantum systems has been revitalized by the emergence of experimental systems that are well-isolated from their environment. In this paper, we consider the closed-system dynamics of an archetypal model: spins driven across a second-order quantum critical point, which are traditionally described by the Kibble-Zurek mechanism. Imbuing the driving field with Newtonian dynamics, we find that the full closed system exhibits a robust new phenomenon—dynamic critical trapping—in which the system is self-trapped near the critical point due to efficient absorption of field kinetic energy by heating the quantum spins. We quantify limits in which this phenomenon can be observed and generalize these results by developing a Kibble-Zurek scaling theory that incorporates the dynamic field. Our findings can potentially be interesting in the context of early universe physics, where the role of the driving field is played by the inflaton or a modulus field.

Simulations of defect spin qubits in piezoelectric semiconductors

NASA Astrophysics Data System (ADS)

Seo, Hosung

In recent years, remarkable advances have been reported in the development of defect spin qubits in semiconductors for solid-state quantum information science and quantum metrology. Promising spin qubits include the nitrogen-vacancy center in diamond, dopants in silicon, and the silicon vacancy and divacancy spins in silicon carbide. In this talk, I will highlight some of our recent efforts devoted to defect spin qubits in piezoelectric wide-gap semiconductors for potential applications in mechanical hybrid quantum systems. In particular, I will describe our recent combined theoretical and experimental study on remarkably robust quantum coherence found in the divancancy qubits in silicon carbide. We used a quantum bath model combined with a cluster expansion method to identify the microscopic mechanisms behind the unusually long coherence times of the divacancy spins in SiC. Our study indicates that developing spin qubits in complex crystals with multiple types of atom is a promising route to realize strongly coherent hybrid quantum systems. I will also discuss progress and challenges in computational design of new spin defects for use as qubits in piezoelectric crystals such as AlN and SiC, including a new defect design concept using large metal ion - vacancy complexes. Our first principles calculations include DFT computations using recently developed self-consistent hybrid density functional theory and large-scale many-body GW theory. This work was supported by the National Science Foundation (NSF) through the University of Chicago MRSEC under Award Number DMR-1420709.

Cooling and heating of the quantum motion of trapped cadmium(+) ions

NASA Astrophysics Data System (ADS)

Deslauriers, Louis

The quest for a quantum system best satisfying the stringent requirements of a quantum information processor has made tremendous progress in many fields of physics. In the last decade, trapped ions have been established as one of the most promising architectures to accomplish the task. Internal states of an ion which can have extremely long coherence time can be used to store a quantum bit, and therefore allow many gate operations before the coherence is lost. Entanglement between multiple ions can be established via Coulomb interactions mediated by appropriate laser fields. Entangling schemes usually require the ions to be initialized to near their motional ground state. The interaction of fluctuating electric fields with the motional state of the ion leads to heating and thus to decoherence for entanglement generation limiting the fidelity of quantum logic gates. Effective ground state cooling of trapped ion motion and suppression of motional heating are thus crucial to many applications of trapped ions in quantum information science. In this thesis, I describe the implementation and study of several components of a Cadmium-ion-based quantum information processor, with special emphasis on the control and decoherence of trapped ion motion. I first discuss the building and design of various ion traps that were used in this work. I also report on the use of ultrafast laser pulses to photoionize and load cadmium ions in a variety of rf Paul trap geometries. A detailed analysis of the photoionization scheme is presented, along with its dependence on controlled experimental parameters. I then describe the implementation of Raman sideband cooling on a single trapped 111Cd+ ion to the ground state of motion, where a ground state population of 97% was achieved. The efficacy of this cooling technique is discussed with respect to different initial motional state distributions and its sensitivity to the presence of motional heating. I also present an experiment where the motion of a single trapped 112Cd+ ion is sympathetically cooled by directly Doppler cooling a 114Cd+ ion in the same trap. The implications of this result are relevant to the scaling of a trapped ion quantum computer, where the unwanted motion of an ion crystal can be quenched while not affecting the internal states of the qubit ions. (Abstract shortened by UMI.)

Geometric manipulation of trapped ions for quantum computation.

PubMed

Duan, L M; Cirac, J I; Zoller, P

2001-06-01

We propose an experimentally feasible scheme to achieve quantum computation based solely on geometric manipulations of a quantum system. The desired geometric operations are obtained by driving the quantum system to undergo appropriate adiabatic cyclic evolutions. Our implementation of the all-geometric quantum computation is based on laser manipulation of a set of trapped ions. An all-geometric approach, apart from its fundamental interest, offers a possible method for robust quantum computation.

Cooling the Collective Motion of Trapped Ions to Initialize a Quantum Register

DTIC Science & Technology

2016-09-13

computation [1] provides a gen- eral framework for fundamental investigations into sub- jects such as entanglement, quantum measurement, and quantum ...information theory. Since quantum computation relies on entanglement between qubits, any implementa- tion of a quantum computer must offer isolation from the...for realiz- ing a quantum computer , which is scalable to an arbitrary number of qubits. Their scheme is based on a collection of trapped atomic ions

Coherence properties and quantum state transportation in an optical conveyor belt.

PubMed

Kuhr, S; Alt, W; Schrader, D; Dotsenko, I; Miroshnychenko, Y; Rosenfeld, W; Khudaverdyan, M; Gomer, V; Rauschenbeutel, A; Meschede, D

2003-11-21

We have prepared and detected quantum coherences of trapped cesium atoms with long dephasing times. Controlled transport by an "optical conveyor belt" over macroscopic distances preserves the atomic coherence with slight reduction of coherence time. The limiting dephasing effects are experimentally identified, and we present an analytical model of the reversible and irreversible dephasing mechanisms. Our experimental methods are applicable at the single-atom level. Coherent quantum bit operations along with quantum state transport open the route towards a "quantum shift register" of individual neutral atoms.

Trapped-Ion Quantum Logic with Global Radiation Fields.

PubMed

Weidt, S; Randall, J; Webster, S C; Lake, K; Webb, A E; Cohen, I; Navickas, T; Lekitsch, B; Retzker, A; Hensinger, W K

2016-11-25

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

Free energy landscape and localization of nanoparticles at block copolymer model defects.

PubMed

Kim, Yongjoo; Chen, Hsieh; Alexander-Katz, Alfredo

2014-05-14

Nanoparticle localization in block copolymer model defects is studied using self-consistent field theory simulations. In particular we study the nanoparticle free energy landscape for three different model defects: X, T, Y shape defects. Our results indicate that nanoparticles can be strongly bound to certain locations in these defects. The symmetry of the defects affects in a non-trivial fashion the "stiffness of the trap", with the X shape defect displaying the deepest energy well. The T and Y defects exhibit orientations along which the potential energy well is rather shallow. Furthermore, we find that the free energy well is tunable by the size of the nanoparticles. Our results help to explain recent experimental observations in block copolymer templated assembly of nanoparticles. Furthermore, they may open new avenues to assemble arbitrary heterogeneous patterns with precise nanoparticle positions by carefully controlling the morphology of a block copolymer system by using directed self-assembly techniques.

Ultrafast photocarrier dynamics related to defect states of Si1-xGex nanowires measured by optical pump-THz probe spectroscopy.

PubMed

Bae, Jung Min; Lee, Woo-Jung; Jung, Seonghoon; Ma, Jin Won; Jeong, Kwang-Sik; Oh, Seung Hoon; Kim, Seongsin M; Suh, Dongchan; Song, Woobin; Kim, Sunjung; Park, Jaehun; Cho, Mann-Ho

2017-06-14

Slightly tapered Si 1-x Ge x nanowires (NWs) (x = 0.29-0.84) were synthesized via a vapor-liquid-solid procedure using Au as a catalyst. We measured the optically excited carrier dynamics of Si 1-x Ge x NWs as a function of Ge content using optical pump-THz probe spectroscopy. The measured -ΔT/T 0 signals of Si 1-x Ge x NWs were converted into conductivity in the THz region. We developed a fitting formula to apply to indirect semiconductors such as Si 1-x Ge x , which explains the temporal population of photo-excited carriers in the band structure and the relationship between the trapping time and the defect states on an ultrafast time scale. From the fitting results, we extracted intra- and inter-valley transition times and trapping times of electrons and holes of Si 1-x Ge x NWs as a function of Ge content. On the basis of theoretical reports, we suggest a physical model to interpret the trapping times related to the species of interface defect states located at the oxide/NW: substoichiometric oxide states of Si(Ge) 0+,1+,2+ , but not Si(Ge) 3+ , could function as defect states capturing photo-excited electrons or holes and could determine the different trapping times of electrons and holes depending on negatively or neutrally charged states.

III-V heterostructure tunnel field-effect transistor.

PubMed

Convertino, C; Zota, C B; Schmid, H; Ionescu, A M; Moselund, K E

2018-07-04

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III-V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

III–V heterostructure tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Convertino, C.; Zota, C. B.; Schmid, H.; Ionescu, A. M.; Moselund, K. E.

2018-07-01

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III–V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

Electronic excitations and defects in fluoroperovskite LiBaF3

NASA Astrophysics Data System (ADS)

Springis, Maris; Brikmane, Liga; Tale, Ivar; Kulis, Peteris

2003-08-01

A survey of the present situation with respect to knowledge of lattice defects, electronic excitations, such as excitons and localized excitons, as well as energy storage and transfer phenomena in LiBaF3 crystals is given. Both phenomenological models and experimental interpretations of optical absorption bands, tentatively associated with F-type (electron) centers created by X-ray or electron irradiation, is reviewed. Interpretation of three radiative processes (super-fast core-valence transitions, slow trapped exciton luminescence and luminescence of structure defects) observed in undoped LiBaF3 crystals is analyzed with respect to practical application. Attention is paid to the behavior of ultraviolet emission so far ascribed to self-trapped exciton luminescence and also observed as a result of electron recombination with localized hole at various temperatures (even at room temperature), depending on crystal purity and growth conditions. Finally, some aspects of ionic processes in thermal relaxation of defects are pointed to.

Integrated Visible Photonics for Trapped-Ion Quantum Computing

DTIC Science & Technology

2017-06-10

necessarily reflect the views of the Department of Defense. Abstract- A scalable trapped-ion-based quantum - computing architecture requires the... Quantum Computing Dave Kharas, Cheryl Sorace-Agaskar, Suraj Bramhavar, William Loh, Jeremy M. Sage, Paul W. Juodawlkis, and John...coherence times, strong coulomb interactions, and optical addressability, hold great promise for implementation of practical quantum information

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

PubMed

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Towards Laser Cooling Trapped Ions with Telecom Light

NASA Astrophysics Data System (ADS)

Dungan, Kristina; Becker, Patrick; Donoghue, Liz; Liu, Jackie; Olmschenk, Steven

2015-05-01

Quantum information has many potential applications in communication, atomic clocks, and the precision measurement of fundamental constants. Trapped ions are excellent candidates for applications in quantum information because of their isolation from external perturbations, and the precise control afforded by laser cooling and manipulation of the quantum state. For many applications in quantum communication, it would be advantageous to interface ions with telecom light. We present progress towards laser cooling and trapping of doubly-ionized lanthanum, which should require only infrared, telecom-compatible light. Additionally, we present progress on optimization of a second-harmonic generation cavity for laser cooling and trapping barium ions, for future sympathetic cooling experiments. This research is supported by the Army Research Office, Research Corporation for Science Advancement, and Denison University.

A Study on Fast Gates for Large-Scale Quantum Simulation with Trapped Ions

PubMed Central

Taylor, Richard L.; Bentley, Christopher D. B.; Pedernales, Julen S.; Lamata, Lucas; Solano, Enrique; Carvalho, André R. R.; Hope, Joseph J.

2017-01-01

Large-scale digital quantum simulations require thousands of fundamental entangling gates to construct the simulated dynamics. Despite success in a variety of small-scale simulations, quantum information processing platforms have hitherto failed to demonstrate the combination of precise control and scalability required to systematically outmatch classical simulators. We analyse how fast gates could enable trapped-ion quantum processors to achieve the requisite scalability to outperform classical computers without error correction. We analyze the performance of a large-scale digital simulator, and find that fidelity of around 70% is realizable for π-pulse infidelities below 10−5 in traps subject to realistic rates of heating and dephasing. This scalability relies on fast gates: entangling gates faster than the trap period. PMID:28401945

A Study on Fast Gates for Large-Scale Quantum Simulation with Trapped Ions.

PubMed

Taylor, Richard L; Bentley, Christopher D B; Pedernales, Julen S; Lamata, Lucas; Solano, Enrique; Carvalho, André R R; Hope, Joseph J

2017-04-12

Large-scale digital quantum simulations require thousands of fundamental entangling gates to construct the simulated dynamics. Despite success in a variety of small-scale simulations, quantum information processing platforms have hitherto failed to demonstrate the combination of precise control and scalability required to systematically outmatch classical simulators. We analyse how fast gates could enable trapped-ion quantum processors to achieve the requisite scalability to outperform classical computers without error correction. We analyze the performance of a large-scale digital simulator, and find that fidelity of around 70% is realizable for π-pulse infidelities below 10 -5 in traps subject to realistic rates of heating and dephasing. This scalability relies on fast gates: entangling gates faster than the trap period.

Photoluminescence Spectra From The Direct Energy Gap of a-SiQDs

NASA Astrophysics Data System (ADS)

Abdul-Ameer, Nidhal M.; Abdulrida, Moafak C.; Abdul-Hakeem, Shatha M.

2018-05-01

A theoretical model for radiative recombination in amorphous silicon quantum dots (a-SiQDs) was developed. In this model, for the first time, the coexistence of both spatial and quantum confinements were considered. Also, it is found that the photoluminescence exhibits significant size dependence in the range (1-4) nm of the quantum dots. a-SiQDs show visible light emission peak energies and high radiative quantum efficiency at room temperature,in contrast to bulk a-Si structures. The quantum efficiency is sensitive to any change in defect density (the volume nonradiative centers density and/or the surface nonradiative centers density) but, with small dots sizes, the quantum efficiency is insensitive to such defects. Our analysis shows that the photoluminescence intensity increases or decreases by the effect of radiative quantum efficiency. By controlling the size of a-SiQDs, we note that the energy of emission can be tuned. The blue shift is attributed to quantum confinement effect. Meanwhile, the spatial confinement effect is clearly observed in red shift in emission spectra. we found a good agreement with the experimental published data. Therefore, we assert that a-SiQDs material is a promising candidate for visible, tunable, and high performance devices of light emitting.

Experimental Issues in Coherent Quantum-State Manipulation of Trapped Atomic Ions

PubMed Central

Wineland, D. J.; Monroe, C.; Itano, W. M.; Leibfried, D.; King, B. E.; Meekhof, D. M.

1998-01-01

Methods for, and limitations to, the generation of entangled states of trapped atomic ions are examined. As much as possible, state manipulations are described in terms of quantum logic operations since the conditional dynamics implicit in quantum logic is central to the creation of entanglement. Keeping with current interest, some experimental issues in the proposal for trappedion quantum computation by J. I. Cirac and P. Zoller (University of Innsbruck) are discussed. Several possible decoherence mechanisms are examined and what may be the more important of these are identified. Some potential applications for entangled states of trapped-ions which lie outside the immediate realm of quantum computation are also discussed. PMID:28009379

Quantum-mechanical engines working with an ideal gas with a finite number of particles confined in a power-law trap

NASA Astrophysics Data System (ADS)

Wang, Jianhui; Ma, Yongli; He, Jizhou

2015-07-01

Based on quantum thermodynamic processes, we make a quantum-mechanical (QM) extension of the typical heat engine cycles, such as the Carnot, Brayton, Otto, Diesel cycles, etc., with no introduction of the concept of temperature. When these QM engine cycles are implemented by an ideal gas confined in an arbitrary power-law trap, a relation between the quantum adiabatic exponent and trap exponent is found. The differences and similarities between the efficiency of a given QM engine cycle and its classical counterpart are revealed and discussed.

Quantum memory with optically trapped atoms.

PubMed

Chuu, Chih-Sung; Strassel, Thorsten; Zhao, Bo; Koch, Markus; Chen, Yu-Ao; Chen, Shuai; Yuan, Zhen-Sheng; Schmiedmayer, Jörg; Pan, Jian-Wei

2008-09-19

We report the experimental demonstration of quantum memory for collective atomic states in a far-detuned optical dipole trap. Generation of the collective atomic state is heralded by the detection of a Raman scattered photon and accompanied by storage in the ensemble of atoms. The optical dipole trap provides confinement for the atoms during the quantum storage while retaining the atomic coherence. We probe the quantum storage by cross correlation of the photon pair arising from the Raman scattering and the retrieval of the atomic state stored in the memory. Nonclassical correlations are observed for storage times up to 60 mus.

Novel Physical Model for DC Partial Discharge in Polymeric Insulators

NASA Astrophysics Data System (ADS)

Andersen, Allen; Dennison, J. R.

The physics of DC partial discharge (DCPD) continues to pose a challenge to researchers. We present a new physically-motivated model of DCPD in amorphous polymers based on our dual-defect model of dielectric breakdown. The dual-defect model is an extension of standard static mean field theories, such as the Crine model, that describe avalanche breakdown of charge carriers trapped on uniformly distributed defect sites. It assumes the presence of both high-energy chemical defects and low-energy thermally-recoverable physical defects. We present our measurements of breakdown and DCPD for several common polymeric materials in the context of this model. Improved understanding of DCPD and how it relates to eventual dielectric breakdown is critical to the fields of spacecraft charging, high voltage DC power distribution, high density capacitors, and microelectronics. This work was supported by a NASA Space Technology Research Fellowship.

Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide

NASA Astrophysics Data System (ADS)

Ivády, Viktor; Szász, Krisztián; Falk, Abram L.; Klimov, Paul V.; Christle, David J.; Janzén, Erik; Abrikosov, Igor A.; Awschalom, David D.; Gali, Adam

2015-09-01

Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nuclear hyperpolarization. DNP is therefore an important process in the field of quantum-information processing, sensitivity-enhanced nuclear magnetic resonance, and nuclear-spin-based spintronics. DNP based on optical pumping of point defects has been demonstrated by using the electron spin of nitrogen-vacancy (NV) center in diamond, and more recently, by using divacancy and related defect spins in hexagonal silicon carbide (SiC). Here, we describe a general model for these optical DNP processes that allows the effects of many microscopic processes to be integrated. Applying this theory, we gain a deeper insight into dynamic nuclear spin polarization and the physics of diamond and SiC defects. Our results are in good agreement with experimental observations and provide a detailed and unified understanding. In particular, our findings show that the defect electron spin coherence times and excited state lifetimes are crucial factors in the entire DNP process.

Modeling electronic trap state distributions in nanocrystalline anatase

NASA Astrophysics Data System (ADS)

Le, Nam; Schweigert, Igor

The charge transport properties of nanocrystalline TiO2 films, and thus the catalytic performance of devices that incorporate them, are affected strongly by the spatial and energetic distribution of localized electronic trap states. Such traps may arise from a variety of defects: Ti interstitials, O vacancies, step edges at surfaces, and grain boundaries. We have developed a procedure for applying density functional theory (DFT) and density functional tight binding (DFTB) calculations to characterize distributions of localized states arising from multiple types of defects. We have applied the procedure to investigate how the morphologies of interfaces between pairs of attached anatase nanoparticles determine the energies of trap states therein. Our results complement recent experimental findings that subtle changes in the morphology of highly porous TiO2 aerogel networks can have a dramatic effect on catalytic performance, which was attributed to changes in the distribution of trap states. This work was supported by the U.S. Naval Research Laboratory via the National Research Council and by the Office of Naval Research through the U.S. Naval Research Laboratory.

First-principles engineering of charged defects for two-dimensional quantum technologies

NASA Astrophysics Data System (ADS)

Wu, Feng; Galatas, Andrew; Sundararaman, Ravishankar; Rocca, Dario; Ping, Yuan

2017-12-01

Charged defects in two-dimensional (2D) materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. The advancement of these technologies requires a rational design of ideal defect centers, demanding reliable computation methods for the quantitatively accurate prediction of defect properties. We present an accurate, parameter-free, and efficient procedure to evaluate the quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded the accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h -BN ) for their charge transition levels, stable spin states, and optical excitations. We identify CBVN (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

Open quantum maps from complex scaling of kicked scattering systems

NASA Astrophysics Data System (ADS)

Mertig, Normann; Shudo, Akira

2018-04-01

We derive open quantum maps from periodically kicked scattering systems and discuss the computation of their resonance spectra in terms of theoretically grounded methods, such as complex scaling and sufficiently weak absorbing potentials. In contrast, we also show that current implementations of open quantum maps, based on strong absorptive or even projective openings, fail to produce the resonance spectra of kicked scattering systems. This comparison pinpoints flaws in current implementations of open quantum maps, namely, the inability to separate resonance eigenvalues from the continuum as well as the presence of diffraction effects due to strong absorption. The reported deviations from the true resonance spectra appear, even if the openings do not affect the classical trapped set, and become appreciable for shorter-lived resonances, e.g., those associated with chaotic orbits. This makes the open quantum maps, which we derive in this paper, a valuable alternative for future explorations of quantum-chaotic scattering systems, for example, in the context of the fractal Weyl law. The results are illustrated for a quantum map model whose classical dynamics exhibits key features of ionization and a trapped set which is organized by a topological horseshoe.

Scalable digital hardware for a trapped ion quantum computer

NASA Astrophysics Data System (ADS)

Mount, Emily; Gaultney, Daniel; Vrijsen, Geert; Adams, Michael; Baek, So-Young; Hudek, Kai; Isabella, Louis; Crain, Stephen; van Rynbach, Andre; Maunz, Peter; Kim, Jungsang

2016-12-01

Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them. Modular ion trap quantum computer architectures address scalability by constructing individual quantum processors interconnected via a network of quantum communication channels. Successful operation of such quantum hardware requires a fully programmable classical control system capable of frequency stabilizing the continuous wave lasers necessary for loading, cooling, initialization, and detection of the ion qubits, stabilizing the optical frequency combs used to drive logic gate operations on the ion qubits, providing a large number of analog voltage sources to drive the trap electrodes, and a scheme for maintaining phase coherence among all the controllers that manipulate the qubits. In this work, we describe scalable solutions to these hardware development challenges.

Overflow of a dipolar exciton trap at high magnetic fields

NASA Astrophysics Data System (ADS)

Dietl, Sebastian; Kowalik-Seidl, Katarzyna; Hammer, Lukas; Schuh, Dieter; Wegscheider, Werner; Holleitner, Alexander; Wurstbauer, Ursula

We study the photoluminescence of trapped dipolar excitons (IX) in coupled double GaAs quantum wells at low temperatures and high magnetic fields. A voltage-tunable electrode geometry controls the strength of the quantum confined Stark effect and defines the lateral trapping potential. Furthermore, it enhances the IX lifetime, enabling them to cool down to lattice temperature. We show that a magnetic field in Faraday configuration effectively prevents the escape of unbound photogenerated charge carriers from the trap area, thus increasing the density of dipolar excitons. For large magnetic fields, we observe an overflow of the IX trap and an effectively suppressed quantum confined Stark effect. We acknowledge financial support by the German Excellence Initiative via the Nanosystems Initiative Munich (NIM).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Illera, S., E-mail: sillera@el.ub.edu; Prades, J. D.; Cirera, A.

The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properlymore » reproduced.« less

Tunable Holstein model with cold polar molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herrera, Felipe; Krems, Roman V.

2011-11-15

We show that an ensemble of polar molecules trapped in an optical lattice can be considered as a controllable open quantum system. The coupling between collective rotational excitations and the motion of the molecules in the lattice potential can be controlled by varying the strength and orientation of an external dc electric field as well as the intensity of the trapping laser. The system can be described by a generalized Holstein Hamiltonian with tunable parameters and can be used as a quantum simulator of excitation energy transfer and polaron phenomena. We show that the character of excitation energy transfer canmore » be modified by tuning experimental parameters.« less

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

PubMed

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Ultrafast state detection and 2D ion crystals in a Paul trap

NASA Astrophysics Data System (ADS)

Ip, Michael; Ransford, Anthony; Campbell, Wesley

2016-05-01

Projective readout of quantum information stored in atomic qubits typically uses state-dependent CW laser-induced fluorescence. This method requires an often sophisticated imaging system to spatially filter out the background CW laser light. We present an alternative approach that instead uses simple pulse sequences from a mode-locked laser to affect the same state-dependent excitations in less than 1 ns. The resulting atomic fluorescence occurs in the dark, allowing the placement of non-imaging detectors right next to the atom to improve the qubit state detection efficiency and speed. We also study 2D Coulomb crystals of atomic ions in an oblate Paul trap. We find that crystals with hundreds of ions can be held in the trap, potentially offering an alternative to the use of Penning traps for the quantum simulation of 2D lattice spin models. We discuss the classical physics of these crystals and the metastable states that are supported in 2D. This work is supported by the US Army Research Office.

The quantum defect: Early history and recent developments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rau, A.R.; Inokuti, M.

1997-03-01

The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term {open_quotes}quantum defect{close_quotes} does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schr{umlt o}dinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. We present the early history of the quantum-defect idea, and sketch its recent developments. {copyright}more » {ital 1997 American Association of Physics Teachers.}« less

Rydberg Excitation of a Single Trapped Ion.

PubMed

Feldker, T; Bachor, P; Stappel, M; Kolbe, D; Gerritsma, R; Walz, J; Schmidt-Kaler, F

2015-10-23

We demonstrate excitation of a single trapped cold (40)Ca(+) ion to Rydberg levels by laser radiation in the vacuum ultraviolet at a wavelength of 122 nm. Observed resonances are identified as 3d(2)D(3/2) to 51F, 52F and 3d(2)D(5/2) to 64F. We model the line shape and our results imply a large state-dependent coupling to the trapping potential. Rydberg ions are of great interest for future applications in quantum computing and simulation, in which large dipolar interactions are combined with the superb experimental control offered by Paul traps.

Ultracold few fermionic atoms in needle-shaped double wells: spin chains and resonating spin clusters from microscopic Hamiltonians emulated via antiferromagnetic Heisenberg and t-J models

NASA Astrophysics Data System (ADS)

Yannouleas, Constantine; Brandt, Benedikt B.; Landman, Uzi

2016-07-01

Advances with trapped ultracold atoms intensified interest in simulating complex physical phenomena, including quantum magnetism and transitions from itinerant to non-itinerant behavior. Here we show formation of antiferromagnetic ground states of few ultracold fermionic atoms in single and double well (DW) traps, through microscopic Hamiltonian exact diagonalization for two DW arrangements: (i) two linearly oriented one-dimensional, 1D, wells, and (ii) two coupled parallel wells, forming a trap of two-dimensional, 2D, nature. The spectra and spin-resolved conditional probabilities reveal for both cases, under strong repulsion, atomic spatial localization at extemporaneously created sites, forming quantum molecular magnetic structures with non-itinerant character. These findings usher future theoretical and experimental explorations into the highly correlated behavior of ultracold strongly repelling fermionic atoms in higher dimensions, beyond the fermionization physics that is strictly applicable only in the 1D case. The results for four atoms are well described with finite Heisenberg spin-chain and cluster models. The numerical simulations of three fermionic atoms in symmetric DWs reveal the emergent appearance of coupled resonating 2D Heisenberg clusters, whose emulation requires the use of a t-J-like model, akin to that used in investigations of high T c superconductivity. The highly entangled states discovered in the microscopic and model calculations of controllably detuned, asymmetric, DWs suggest three-cold-atom DW quantum computing qubits.

Quantum Information Experiments with Trapped Ions at NIST

NASA Astrophysics Data System (ADS)

Wilson, Andrew

2015-03-01

We present an overview of recent trapped-ion quantum information experiments at NIST. Advancing beyond few-qubit ``proof-of-principle'' experiments to the many-qubit systems needed for practical quantum simulation and information processing, without compromising on the performance demonstrated with small systems, remains a major challenge. One approach to scalable hardware development is surface-electrode traps. Micro-fabricated planar traps can have a number of useful features, including flexible electrode geometries, integrated microwave delivery, and spatio-temporal tuning of potentials for ion transport and spin-spin interactions. In this talk we report on a number of on-going investigations with surface traps. Experiments feature a multi-zone trap with closely spaced ions in a triangular arrangement (a first step towards 2D arrays of ions with tunable spin-spin interactions), a scheme for smooth transport through a junction in a 2D structure based on switchable RF potentials, and a micro-fabricated photo-detector integrated into a trap. We also give a progress report on our latest efforts to improve the fidelity of both optical and microwave 2-qubit gates. This work was supported by IARPA, ONR and the NIST Quantum Information Program. The 3-ion and switchable-RF-junction traps were developed in collaboration with Sandia National Laboratory.

Hybrid Quantum Systems with Trapped Charged Particles

NASA Astrophysics Data System (ADS)

Kotler, Shlomi; Leibfried, Dietrich; Simmonds, Raymond; Wineland, Dave

We will review a joint effort by the Ion Storage Group and the Advanced Microwave Photonics Group at NIST (Boulder, CO) to design a hybrid system that interfaces charged particles with macroscopic high-Q resonators. We specifically consider coupling trapped charges to superconducting LC resonators, the mechanical modes of Silicon-Nitride membranes, and piezo-electric materials. We aim to achieve the strong coupling regime, where a single quantum of motion of the trapped charge can be coherently exchanged with harmonic motion of the macroscopic entity (electrical and/or mechanical). These kind of devices could potentially take advantage of both macroscopic control techniques and the long quantum coherence of its trapped charged particles.

Trapped-ion quantum logic gates based on oscillating magnetic fields.

PubMed

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

Water-sensitive positron trapping modes in nanoporous magnesium aluminate ceramics

NASA Astrophysics Data System (ADS)

Filipecki, J.; Ingram, A.; Klym, H.; Shpotyuk, O.; Vakiv, M.

2007-08-01

The water-sensitive positron trapping modes in nanoporous MgAl2O4 ceramics with a spinel structure are studied. It is shown that water-sorption processes in magnesium aluminate ceramics leads to corresponding increase in positron trapping rates of extended defects located near intergranual boundaries. This catalytic affect has reversible nature, being strongly dependent on sorption water fluxes in ceramics. The fixation of all water-dependent positron trapping inputs allow to refine the most significant changes in positron trapping rate of extended defects.

Practicality of quantum information processing

NASA Astrophysics Data System (ADS)

Lau, Hoi-Kwan

Quantum Information Processing (QIP) is expected to bring revolutionary enhancement to various technological areas. However, today's QIP applications are far from being practical. The problem involves both hardware issues, i.e., quantum devices are imperfect, and software issues, i.e., the functionality of some QIP applications is not fully understood. Aiming to improve the practicality of QIP, in my PhD research I have studied various topics in quantum cryptography and ion trap quantum computation. In quantum cryptography, I first studied the security of position-based quantum cryptography (PBQC). I discovered a wrong assumption in the previous literature that the cheaters are not allowed to share entangled resources. I proposed entanglement attacks that could cheat all known PBQC protocols. I also studied the practicality of continuous-variable (CV) quantum secret sharing (QSS). While the security of CV QSS was considered by the literature only in the limit of infinite squeezing, I found that finitely squeezed CV resources could also provide finite secret sharing rate. Our work relaxes the stringent resources requirement of implementing QSS. In ion trap quantum computation, I studied the phase error of quantum information induced by dc Stark effect during ion transportation. I found an optimized ion trajectory for which the phase error is the minimum. I also defined a threshold speed, above which ion transportation would induce significant error. In addition, I proposed a new application for ion trap systems as universal bosonic simulators (UBS). I introduced two architectures, and discussed their respective strength and weakness. I illustrated the implementations of bosonic state initialization, transformation, and measurement by applying radiation fields or by varying the trap potential. When comparing with conducting optical experiments, the ion trap UBS is advantageous in higher state initialization efficiency and higher measurement accuracy. Finally, I proposed a new method to re-cool ion qubits during quantum computation. The idea is to transfer the motional excitation of a qubit to another ion that is prepared in the motional ground state. I showed that my method could be ten times faster than current laser cooling techniques, and thus could improve the speed of ion trap quantum computation.

Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

NASA Astrophysics Data System (ADS)

Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

2017-01-01

Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

Rose bengal in poly(2-hydroxyethyl methacrylate) thin films: self-quenching by photoactive energy traps

NASA Astrophysics Data System (ADS)

Ezquerra Riega, Sergio D.; Rodríguez, Hernán B.; San Román, Enrique

2017-03-01

The effect of dye concentration on the fluorescence,ΦF, and singlet molecular oxygen,ΦΔ, quantum yields of rose bengal loaded poly(2-hydroxyethyl methacrylate) thin films (∼200 nm thick) was investigated, with the aim of understanding the effect of molecular interactions on the photophysical properties of dyes in crowded constrained environments. Films were characterized by absorption and fluorescence spectroscopy, singlet molecular oxygen (1O2) production was quantified using a chemical monitor, and the triplet decay was determined by laser flash-photolysis. For the monomeric dilute dye, ΦF = 0.05 ± 0.01 and ΦΔ = 0.76 ± 0.14. The effect of humidity and the photostability of the dye were also investigated. Spectral changes in absorption and fluorescence in excess of 0.05 M and concentration self-quenching after 0.01 M are interpreted in the context of a quenching radius model. Calculations of energy migration and trapping rates were performed assuming random distribution of the dye. Best fits of fluorescence quantum yields with concentration are obtained in the whole concentration range with a quenching radius r Q = 1.5 nm, in the order of molecular dimensions. Agreement is obtained only if dimeric traps are considered photoactive, with an observed fluorescence quantum yield ratio ΦF,trap/ΦF,monomer ≈ 0.35. Fluorescent traps are capable of yielding triplet states and 1O2. Results show that the excited state generation efficiency, calculated as the product between the absorption factor and the fluorescence quantum yield, is maximized at around 0.15 M, a very high concentration for random dye distributions. Relevant information for the design of photoactive dyed coatings is provided.

Imaging Anyons with Scanning Tunneling Microscopy

NASA Astrophysics Data System (ADS)

Papić, Zlatko; Mong, Roger S. K.; Yazdani, Ali; Zaletel, Michael P.

2018-01-01

Anyons are exotic quasiparticles with fractional charge that can emerge as fundamental excitations of strongly interacting topological quantum phases of matter. Unlike ordinary fermions and bosons, they may obey non-Abelian statistics—a property that would help realize fault-tolerant quantum computation. Non-Abelian anyons have long been predicted to occur in the fractional quantum Hall (FQH) phases that form in two-dimensional electron gases in the presence of a large magnetic field, such as the ν =5 /2 FQH state. However, direct experimental evidence of anyons and tests that can distinguish between Abelian and non-Abelian quantum ground states with such excitations have remained elusive. Here, we propose a new experimental approach to directly visualize the structure of interacting electronic states of FQH states with the STM. Our theoretical calculations show how spectroscopy mapping with the STM near individual impurity defects can be used to image fractional statistics in FQH states, identifying unique signatures in such measurements that can distinguish different proposed ground states. The presence of locally trapped anyons should leave distinct signatures in STM spectroscopic maps, and enables a new approach to directly detect—and perhaps ultimately manipulate—these exotic quasiparticles.

A two-qubit logic gate in silicon.

PubMed

Veldhorst, M; Yang, C H; Hwang, J C C; Huang, W; Dehollain, J P; Muhonen, J T; Simmons, S; Laucht, A; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

2015-10-15

Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.

Tailored Codes for Small Quantum Memories

NASA Astrophysics Data System (ADS)

Robertson, Alan; Granade, Christopher; Bartlett, Stephen D.; Flammia, Steven T.

2017-12-01

We demonstrate that small quantum memories, realized via quantum error correction in multiqubit devices, can benefit substantially by choosing a quantum code that is tailored to the relevant error model of the system. For a biased noise model, with independent bit and phase flips occurring at different rates, we show that a single code greatly outperforms the well-studied Steane code across the full range of parameters of the noise model, including for unbiased noise. In fact, this tailored code performs almost optimally when compared with 10 000 randomly selected stabilizer codes of comparable experimental complexity. Tailored codes can even outperform the Steane code with realistic experimental noise, and without any increase in the experimental complexity, as we demonstrate by comparison in the observed error model in a recent seven-qubit trapped ion experiment.

Optimizing Adiabaticity in a Trapped-Ion Quantum Simulator

NASA Astrophysics Data System (ADS)

Richerme, Phil; Senko, Crystal; Korenblit, Simcha; Smith, Jacob; Lee, Aaron; Monroe, Christopher

2013-05-01

Trapped-ion quantum simulators are a leading platform for the study of interacting spin systems, such as fully-connected Ising models with transverse and axial fields. Phonon-mediated spin-dependent optical dipole forces act globally on a linear chain of trapped Yb-171+ ions to generate the spin-spin couplings, with the form and range of such couplings controlled by laser frequencies and trap voltages. The spins are initially prepared along an effective transverse magnetic field, which is large compared to the Ising couplings and slowly ramped down during the quantum simulation. The system remains in the ground state throughout the evolution if the ramp is adiabatic, and the spin ordering is directly measured by state-dependent fluorescence imaging of the ions onto a camera. Two techniques can improve the identification of the ground state at the end of simulations that are unavoidably diabatic. First, we show an optimized ramp protocol that gives a maximal probability of measuring the true ground state given a finite ramp time. Second, we show that no spin ordering is more prevalent than the ground state(s), even for non-adiabatic ramps. This work is supported by grants from the U.S. Army Research Office with funding from the DARPA OLE program, IARPA, and the MURI program; and the NSF Physics Frontier Center at JQI.

Role of bond adaptability in the passivation of colloidal quantum dot solids.

PubMed

Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H

2013-09-24

Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.

Post-Markovian dynamics of quantum correlations: entanglement versus discord

NASA Astrophysics Data System (ADS)

Mohammadi, Hamidreza

2017-02-01

Dynamics of an open two-qubit system is investigated in the post-Markovian regime, where the environments have a short-term memory. Each qubit is coupled to separate environment which is held in its own temperature. The inter-qubit interaction is modeled by XY-Heisenberg model in the presence of spin-orbit interaction and inhomogeneous magnetic field. The dynamical behavior of entanglement and discord has been considered. The results show that quantum discord is more robust than quantum entanglement, during the evolution. Also the asymmetric feature of quantum discord can be monitored by introducing the asymmetries due to inhomogeneity of magnetic field and temperature difference between the reservoirs. By employing proper parameters of the model, it is possible to maintain nonvanishing quantum correlation at high degree of temperature. The results can provide a useful recipe for studying dynamical behavior of two-qubit systems such as trapped spin electrons in coupled quantum dots.

Quantum simulation of transverse Ising models with Rydberg atoms

NASA Astrophysics Data System (ADS)

Schauss, Peter

2018-04-01

Quantum Ising models are canonical models for the study of quantum phase transitions (Sachdev 1999 Quantum Phase Transitions (Cambridge: Cambridge University Press)) and are the underlying concept for many analogue quantum computing and quantum annealing ideas (Tanaka et al Quantum Spin Glasses, Annealing and Computation (Cambridge: Cambridge University Press)). Here we focus on the implementation of finite-range interacting Ising spin models, which are barely tractable numerically. Recent experiments with cold atoms have reached the interaction-dominated regime in quantum Ising magnets via optical coupling of trapped neutral atoms to Rydberg states. This approach allows for the tunability of all relevant terms in an Ising spin Hamiltonian with 1/{r}6 interactions in transverse and longitudinal fields. This review summarizes the recent progress of these implementations in Rydberg lattices with site-resolved detection. Strong correlations in quantum Ising models have been observed in several experiments, starting from a single excitation in the superatom regime up to the point of crystallization. The rapid progress in this field makes spin systems based on Rydberg atoms a promising platform for quantum simulation because of the unmatched flexibility and strength of interactions combined with high control and good isolation from the environment.

Synthesis and Characterizations of Pb-modified CdSe Aqueous Quantum Dots and Their Applications in Quantum Dot-Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Lu, Cheng-Hsin

Quantum Dots (QDs) are semiconductor nanocrystals with typical size ranges around 1-20 nm. They exhibit distinctive size-dependent photoluminescence (PL) properties due to the quantum confinement effect. QDs have great potentials in display, lighting, lasing, bioimaging, fluorescent label, sensor, photodetector, and photovoltaic applications, and have been widely studied in the past decades. Cadmium selenide (CdSe) QDs have been synthesized using an environmentally friendly, aqueous method under low temperature. While traditional QDs synthesized by hot injection method using organic solvent generally exhibit edge-state emission with narrow peaks, aqueous quantum dots (AQDs) tend to have trap-state emissions with broad peaks. The objective of this thesis is to investigate how Pb modifications in CdSe AQDs synthesis can affect the optoelectronic properties of the QDs and how these modifications affect their corresponding photovoltaic performance in quantum dot-sensitized solar cell (QDSSC) applications. Lead (Pb) precursor has been introduced either during the synthesis or after the synthesis of CdSe AQDs forming either Pb-doped or Pb-coated CdSe QDs, respectively. Pb-doped CdSe QDs exhibit red-shift in both absorption and emission spectra while Pb-coated CdSe QDs exhibit blue-shift in both absorption and emission spectra along with the generation of more surface defects. Although blue-shifted absorption indicating a narrower absorption range and the surface defects providing undesired recombination pathways are detrimental to solar cell performance, however surprisingly, we found that QDSSCs made from Pb-coated CdSe QDs actually had better solar cell performance than that made from Pb-doped CdSe QDs. We attributed this finding to a protection/passivation layer formed in-situ when the coated Pb react with the iodide/triiodide electrolyte during solar cell operation resulting in QDSSCs with better charge injection and stability.

Characterization of Defects in Scaled Mis Dielectrics with Variable Frequency Charge Pumping

NASA Astrophysics Data System (ADS)

Paulsen, Ronald Eugene

1995-01-01

Historically, the interface trap has been extensively investigated to determine the effects on device performance. Recently, much attention has been paid to trapping in near-interface oxide traps. Performance of high precision analog circuitry is affected by charge trapping in near-interface oxide traps which produces hysteresis, charge redistribution errors, and dielectric relaxation effects. In addition, the performance of low power digital circuitry, with reduced noise margins, may be drastically affected by the threshold voltage shifts associated with charge trapping in near -interface oxide traps. Since near-interface oxide traps may substantially alter the performance of devices, complete characterization of these defects is necessary. In this dissertation a new characterization technique, variable frequency charge pumping, is introduced which allows charge trapped at the interface to be distinguished from the charge trapped within the oxide. The new experimental technique is an extension of the charge pumping technique to low frequencies such that tunneling may occur from interface traps to near-interface oxide traps. A generalized charge pumping model, based on Shockley-Read-Hall statistics and trap-to-trap tunneling theory, has been developed which allows a more complete characterization of near-interface oxide traps. A pair of coupled differential equations governing the rate of change of occupied interface and near-interface oxide traps have been developed. Due to the experimental conditions in the charge pumping technique the equations may be decoupled, leading to an equation governing the rate of change of occupied interface traps and an equation governing the rate of change of occcupied near-interface oxide traps. Solving the interface trap equation and applying non-steady state charge dynamics leads to an interface trap component of the charge pumping current. In addition, solution to the near-interface oxide trap equation leads to an additional oxide trap component to the charge pumping current. Numerical simulations have been performed to support the analytical development of the generalized charge pumping model. By varying the frequency of the applied charge pumping waveform and monitoring the charge recombined per cycle, the contributions from interface traps may be separated from the contributions of the near-interface oxide traps. The generalized charge pumping model allows characterization of the density and spatial distribution of near-interface oxide traps from this variable frequency charge pumping technique. Characterization of interface and near-interface oxide trap generation has been performed on devices exposed to ionizing radiation, hot electron injection, and high -field/Fowler-Nordheim stressing. Finally, using SONOS nonvolatile memory devices, a framework has been established for experimentally determining not only the spatial distribution of near-interface oxide traps, but also the energetic distribution. An experimental approach, based on tri-level charge pumping, is discussed which allows the energetic distribution of near-interface oxide traps to be determined.

Kinetic Energy of a Trapped Fermi Gas at Finite Temperature.

PubMed

Grela, Jacek; Majumdar, Satya N; Schehr, Grégory

2017-09-29

We study the statistics of the kinetic (or, equivalently, potential) energy for N noninteracting fermions in a 1d harmonic trap of frequency ω at finite temperature T. Remarkably, we find an exact solution for the full distribution of the kinetic energy, at any temperature T and for any N, using a nontrivial mapping to an integrable Calogero-Moser-Sutherland model. As a function of temperature T and for large N, we identify (i) a quantum regime, for T∼ℏω, where quantum fluctuations dominate and (ii) a thermal regime, for T∼Nℏω, governed by thermal fluctuations. We show how the mean and the variance as well as the large deviation function associated with the distribution of the kinetic energy cross over from the quantum to the thermal regime as T increases.

Kinetic Energy of a Trapped Fermi Gas at Finite Temperature

NASA Astrophysics Data System (ADS)

Grela, Jacek; Majumdar, Satya N.; Schehr, Grégory

2017-09-01

We study the statistics of the kinetic (or, equivalently, potential) energy for N noninteracting fermions in a 1 d harmonic trap of frequency ω at finite temperature T . Remarkably, we find an exact solution for the full distribution of the kinetic energy, at any temperature T and for any N , using a nontrivial mapping to an integrable Calogero-Moser-Sutherland model. As a function of temperature T and for large N , we identify (i) a quantum regime, for T ˜ℏω , where quantum fluctuations dominate and (ii) a thermal regime, for T ˜N ℏω , governed by thermal fluctuations. We show how the mean and the variance as well as the large deviation function associated with the distribution of the kinetic energy cross over from the quantum to the thermal regime as T increases.

Microwave quantum logic gates for trapped ions.

PubMed

Ospelkaus, C; Warring, U; Colombe, Y; Brown, K R; Amini, J M; Leibfried, D; Wineland, D J

2011-08-10

Control over physical systems at the quantum level is important in fields as diverse as metrology, information processing, simulation and chemistry. For trapped atomic ions, the quantized motional and internal degrees of freedom can be coherently manipulated with laser light. Similar control is difficult to achieve with radio-frequency or microwave radiation: the essential coupling between internal degrees of freedom and motion requires significant field changes over the extent of the atoms' motion, but such changes are negligible at these frequencies for freely propagating fields. An exception is in the near field of microwave currents in structures smaller than the free-space wavelength, where stronger gradients can be generated. Here we first manipulate coherently (on timescales of 20 nanoseconds) the internal quantum states of ions held in a microfabricated trap. The controlling magnetic fields are generated by microwave currents in electrodes that are integrated into the trap structure. We also generate entanglement between the internal degrees of freedom of two atoms with a gate operation suitable for general quantum computation; the entangled state has a fidelity of 0.76(3), where the uncertainty denotes standard error of the mean. Our approach, which involves integrating the quantum control mechanism into the trapping device in a scalable manner, could be applied to quantum information processing, simulation and spectroscopy.

Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis

NASA Astrophysics Data System (ADS)

Zhao, Peng; Khosravi, Ava; Azcatl, Angelica; Bolshakov, Pavel; Mirabelli, Gioele; Caruso, Enrico; Hinkle, Christopher L.; Hurley, Paul K.; Wallace, Robert M.; Young, Chadwin D.

2018-07-01

Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by C–V characterization. Frequency dependent C–V data shows dispersion in both the depletion and accumulation regions for the MoS2 devices. The border trap density is extracted with a distributed model, and interface traps are analyzed using the high-low frequency and multi-frequency methods. The physical origins of interface traps appear to be caused by impurities/defects in the MoS2 layers, performing as band tail states, while the border traps are associated with the dielectric, likely a consequence of the low-temperature deposition. This work provides a method of using multiple C–V measurements and analysis techniques to analyze the behavior of high-k/TMD gate stacks and deconvolute border traps from interface traps.

Single atom array to form a Rydberg ring

NASA Astrophysics Data System (ADS)

Zhan, Mingsheng; Xu, Peng; He, Xiaodong; Liu, Min; Wang, Jin

2012-02-01

Single atom arrays are ideal quantum systems for studying few-body quantum simulation and quantum computation [1]. Towards realizing a fully controllable array we did a lot of experimental efforts, which include rotating single atoms in a ring optical lattice generated by a spatial light modulator [2], high efficient loading of two atoms into a microscopic optical trap by dynamically reshaping the trap with a spatial light modulator [3], and trapping a single atom in a blue detuned optical bottle beam trap [4]. Recently, we succeeded in trapping up to 6 atoms in a ring optical lattice with one atom in each site. Further laser cooling the array and manipulation of the inner states will provide chance to form Ryberg rings for quantum simulation. [4pt] [1] M. Saffman et al., Rev. Mod. Phys. 82, 2313 (2010)[0pt] [2] X.D. He et al., Opt. Express 17, 21014 (2009)[0pt] [3] X.D. He et al., Opt. Express 18, 13586 (2010)[0pt] [4] P. Xu et al., Opt. Lett. 35, 2164 (2010)

High-fidelity entanglement between a trapped ion and a telecom photon via quantum frequency conversion.

PubMed

Bock, Matthias; Eich, Pascal; Kucera, Stephan; Kreis, Matthias; Lenhard, Andreas; Becher, Christoph; Eschner, Jürgen

2018-05-21

Entanglement between a stationary quantum system and a flying qubit is an essential ingredient of a quantum-repeater network. It has been demonstrated for trapped ions, trapped atoms, color centers in diamond, or quantum dots. These systems have transition wavelengths in the blue, red or near-infrared spectral regions, whereas long-range fiber-communication requires wavelengths in the low-loss, low-dispersion telecom regime. A proven tool to interconnect flying qubits at visible/NIR wavelengths to the telecom bands is quantum frequency conversion. Here we use an efficient polarization-preserving frequency converter connecting 854 nm to the telecom O-band at 1310 nm to demonstrate entanglement between a trapped 40 Ca + ion and the polarization state of a telecom photon with a high fidelity of 98.2 ± 0.2%. The unique combination of 99.75 ± 0.18% process fidelity in the polarization-state conversion, 26.5% external frequency conversion efficiency and only 11.4 photons/s conversion-induced unconditional background makes the converter a powerful ion-telecom quantum interface.

Hybrid Quantum Information Processing with Superconductors and Neutral Atoms

NASA Astrophysics Data System (ADS)

McDermott, Robert

Hybrid approaches to quantum information processing (QIP) aim to capitalize on the strengths of disparate quantum technologies to realize a system whose capabilities exceed those of any single experimental platform. At the University of Wisconsin, we are working toward integration of a fast superconducting quantum processor with a stable, long-lived quantum memory based on trapped neutral atoms. Here we describe the development of a quantum interface between superconducting thin-film cavity circuits and trapped Rydberg atoms, the key technological obstacle to realization of superconductor-atom hybrid QIP. Specific accomplishments to date include development of a theoretical protocol for high-fidelity state transfer between the atom and the cavity; fabrication and characterization of high- Q superconducting cavities with integrated trapping electrodes to enhance zero-point microwave fields at a location remote from the chip surface; and trapping and Rydberg excitation of single atoms within 1 mm of the cavity. We discuss the status of experiments to probe the strong coherent coupling of single Rydberg atoms and the superconducting cavity. Supported by ARO under contract W911NF-16-1-0133.

Magnon edge states in the hardcore- Bose-Hubbard model.

PubMed

Owerre, S A

2016-11-02

Quantum Monte Carlo (QMC) simulation has uncovered nonzero Berry curvature and bosonic edge states in the hardcore-Bose-Hubbard model on the gapped honeycomb lattice. The competition between the chemical potential and staggered onsite potential leads to an interesting quantum phase diagram comprising the superfluid phase, Mott insulator, and charge density wave insulator. In this paper, we present a semiclassical perspective of this system by mapping to a spin-1/2 quantum XY model. We give an explicit analytical origin of the quantum phase diagram, the Berry curvatures, and the edge states using semiclassical approximations. We find very good agreement between the semiclassical analyses and the QMC results. Our results show that the topological properties of the hardcore-Bose-Hubbard model are the same as those of magnon in the corresponding quantum spin system. Our results are applicable to systems of ultracold bosonic atoms trapped in honeycomb optical lattices.

Cooling the center-of-mass motion of a diamond nanocrystal in a magneto-gravitational trap

NASA Astrophysics Data System (ADS)

Hsu, Jen-Feng

A magneto-gravitational trap for micro/nanometer sized diamagnetic particles, such as diamond nanocrystals, is tested and characterized. After exploring various other systems, such as a suspended graphene beam and an optical trap, this magneto-gravitational nanomechanical trapping system for diamond with nitrogen-vacancy (NV) centers presents unique advantages for experiments in fundamental quantum mechanics. Those include, for example, the generation of large quantum superposition states and tests of quantum gravity. Features are demonstrated for this system, such as stable and passive levitation from atmospheric pressure to high vacuum, low resonant frequencies and damping rates, and cooling of the center-of-mass motions to below 1 K. The construction of the trap, vacuum system, optics, and motion detection electronics are described in detail.

Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation

NASA Astrophysics Data System (ADS)

Suproniuk, M.; Pawłowski, M.; Wierzbowski, M.; Majda-Zdancewicz, E.; Pawłowski, Ma.

2018-04-01

The procedure for determination of trap parameters by photo-induced transient spectroscopy is based on the Arrhenius plot that illustrates a thermal dependence of the emission rate. In this paper, we show that the Arrhenius plot obtained by the correlation method is shifted toward lower temperatures as compared to the one obtained with the inverse Laplace transformation. This shift is caused by the model adequacy error of the correlation method and introduces errors to a calculation procedure of defect center parameters. The effect is exemplified by comparing the results of the determination of trap parameters with both methods based on photocurrent transients for defect centers observed in tin-doped neutron-irradiated silicon crystals and in gallium arsenide grown with the Vertical Gradient Freeze method.

Quantum walks with an anisotropic coin II: scattering theory

NASA Astrophysics Data System (ADS)

Richard, S.; Suzuki, A.; de Aldecoa, R. Tiedra

2018-05-01

We perform the scattering analysis of the evolution operator of quantum walks with an anisotropic coin, and we prove a weak limit theorem for their asymptotic velocity. The quantum walks that we consider include one-defect models, two-phase quantum walks, and topological phase quantum walks as special cases. Our analysis is based on an abstract framework for the scattering theory of unitary operators in a two-Hilbert spaces setting, which is of independent interest.

A 2D Array of 100's of Ions for Quantum Simulation and Many-Body Physics in a Penning Trap

NASA Astrophysics Data System (ADS)

Bohnet, Justin; Sawyer, Brian; Britton, Joseph; Bollinger, John

2015-05-01

Quantum simulations promise to reveal new materials and phenomena for experimental study, but few systems have demonstrated the capability to control ensembles in which quantum effects cannot be directly computed. One possible platform for intractable quantum simulations may be a system of 100's of 9Be+ ions in a Penning trap, where the valence electron spins are coupled with an effective Ising interaction in a 2D geometry. Here we report on results from a new Penning trap designed for 2D quantum simulations. We characterize the ion crystal stability and describe progress towards bench-marking quantum effects of the spin-spin coupling using a spin-squeezing witness. We also report on the successful photodissociation of BeH+ contaminant molecular ions that impede the use of such crystals for quantum simulation. This work lays the foundation for future experiments such as the observation of spin dynamics under the quantum Ising Hamiltonian with a transverse field. Supported by a NIST-NRC Research Associateship.

Controlling the Transport of an Ion: Classical and Quantum Mechanical Solutions

DTIC Science & Technology

2014-07-09

quantum systems: tools, achievements, and limitations Christiane P Koch Shortcuts to adiabaticity for an ion in a rotating radially- tight trap M Palmero...Keywords: coherent control, ion traps, quantum information, optimal control theory 1. Introduction Control methods are key enabling techniques in many...figure 6. 3.4. Feasibility analysis of quantum optimal control Numerical optimization of the wavepacket motion is expected to become necessary once

Quantum trajectories in elastic atom-surface scattering: threshold and selective adsorption resonances.

PubMed

Sanz, A S; Miret-Artés, S

2005-01-01

The elastic resonant scattering of He atoms off the Cu(117) surface is fully described with the formalism of quantum trajectories provided by Bohmian mechanics. Within this theory of quantum motion, the concept of trapping is widely studied and discussed. Classically, atoms undergo impulsive collisions with the surface, and then the trapped motion takes place covering at least two consecutive unit cells. However, from a Bohmian viewpoint, atom trajectories can smoothly adjust to the equipotential energy surface profile in a sort of sliding motion; thus the trapping process could eventually occur within one single unit cell. In particular, both threshold and selective adsorption resonances are explained by means of this quantum trapping considering different space and time scales. Furthermore, a mapping between each region of the (initial) incoming plane wave and the different parts of the diffraction and resonance patterns can be easily established, an important issue only provided by a quantum trajectory formalism. (c) 2005 American Institute of Physics.

Exact mapping between different dynamics of isotropically trapped quantum gases

NASA Astrophysics Data System (ADS)

Wamba, Etienne; Pelster, Axel; Anglin, James R.

2016-05-01

Experiments on trapped quantum gases can probe challenging regimes of quantum many-body dynamics, where strong interactions or non-equilibrium states prevent exact theoretical treatment. In this talk, we present a class of exact mappings between all the observables of different experiments, under the experimentally attainable conditions that the gas particles interact via a homogeneously scaling two-body potential which is in general time-dependent, and are confined in an isotropic harmonic trap. We express our result through an identity relating second-quantized field operators in the Heisenberg picture of quantum mechanics which makes it general. It applies to arbitrary measurements on possibly multi-component Bose or Fermi gases in arbitrary initial quantum states, no matter how highly excited or far from equilibrium. We use an example to show how the results of two different and currently feasible experiments can be mapped onto each other by our spacetime transformation. DAMOP sorting category: 6.11 Nonlinear dynamics and out-of-equilibrium trapped gases EW acknowledge the financial support from the Alexander von Humboldt foundation.

Ultrafast, high repetition rate, ultraviolet, fiber-laser-based source: application towards Yb⁺ fast quantum-logic.

PubMed

Hussain, Mahmood Irtiza; Petrasiunas, Matthew Joseph; Bentley, Christopher D B; Taylor, Richard L; Carvalho, André R R; Hope, Joseph J; Streed, Erik W; Lobino, Mirko; Kielpinski, David

2016-07-25

Trapped ions are one of the most promising approaches for the realization of a universal quantum computer. Faster quantum logic gates could dramatically improve the performance of trapped-ion quantum computers, and require the development of suitable high repetition rate pulsed lasers. Here we report on a robust frequency upconverted fiber laser based source, able to deliver 2.5 ps ultraviolet (UV) pulses at a stabilized repetition rate of 300.00000 MHz with an average power of 190 mW. The laser wavelength is resonant with the strong transition in Ytterbium (Yb⁺) at 369.53 nm and its repetition rate can be scaled up using high harmonic mode locking. We show that our source can produce arbitrary pulse patterns using a programmable pulse pattern generator and fast modulating components. Finally, simulations demonstrate that our laser is capable of performing resonant, temperature-insensitive, two-qubit quantum logic gates on trapped Yb⁺ ions faster than the trap period and with fidelity above 99%.

Real-time dynamics of lattice gauge theories with a few-qubit quantum computer

NASA Astrophysics Data System (ADS)

Martinez, Esteban A.; Muschik, Christine A.; Schindler, Philipp; Nigg, Daniel; Erhard, Alexander; Heyl, Markus; Hauke, Philipp; Dalmonte, Marcello; Monz, Thomas; Zoller, Peter; Blatt, Rainer

2016-06-01

Gauge theories are fundamental to our understanding of interactions between the elementary constituents of matter as mediated by gauge bosons. However, computing the real-time dynamics in gauge theories is a notorious challenge for classical computational methods. This has recently stimulated theoretical effort, using Feynman’s idea of a quantum simulator, to devise schemes for simulating such theories on engineered quantum-mechanical devices, with the difficulty that gauge invariance and the associated local conservation laws (Gauss laws) need to be implemented. Here we report the experimental demonstration of a digital quantum simulation of a lattice gauge theory, by realizing (1 + 1)-dimensional quantum electrodynamics (the Schwinger model) on a few-qubit trapped-ion quantum computer. We are interested in the real-time evolution of the Schwinger mechanism, describing the instability of the bare vacuum due to quantum fluctuations, which manifests itself in the spontaneous creation of electron-positron pairs. To make efficient use of our quantum resources, we map the original problem to a spin model by eliminating the gauge fields in favour of exotic long-range interactions, which can be directly and efficiently implemented on an ion trap architecture. We explore the Schwinger mechanism of particle-antiparticle generation by monitoring the mass production and the vacuum persistence amplitude. Moreover, we track the real-time evolution of entanglement in the system, which illustrates how particle creation and entanglement generation are directly related. Our work represents a first step towards quantum simulation of high-energy theories using atomic physics experiments—the long-term intention is to extend this approach to real-time quantum simulations of non-Abelian lattice gauge theories.

Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface

NASA Astrophysics Data System (ADS)

Kawai, Hiroki; Nakasaki, Yasushi; Kanemura, Takahisa; Ishihara, Takamitsu

2018-04-01

Dopant segregation at Si/SiO2 interface has been a serious problem in silicon device technology. This paper reports a comprehensive density-functional study on the segregation mechanisms of boron, phosphorous, and arsenic at the Si/SiO2 interface. We found that three kinds of interfacial defects, namely, interstitial oxygen, oxygen vacancy, and silicon vacancy with two oxygen atoms, are stable in the possible chemical potential range. Thus, we consider these defects as trap sites for the dopants. For these defects, the dopant segregation energies, the electrical activities of the trapped dopants, and the kinetic energy barriers of the trapping/detrapping processes are calculated. As a result, trapping at the interstitial oxygen site is indicated to be the most plausible mechanism of the dopant segregation. The interstitial oxygen works as a major trap site since it has a high areal density at the Si/SiO2 interface due to the low formation energy.

Active stabilization of ion trap radiofrequency potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.

2016-05-15

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

Quantum-assisted Helmholtz machines: A quantum–classical deep learning framework for industrial datasets in near-term devices

NASA Astrophysics Data System (ADS)

Benedetti, Marcello; Realpe-Gómez, John; Perdomo-Ortiz, Alejandro

2018-07-01

Machine learning has been presented as one of the key applications for near-term quantum technologies, given its high commercial value and wide range of applicability. In this work, we introduce the quantum-assisted Helmholtz machine:a hybrid quantum–classical framework with the potential of tackling high-dimensional real-world machine learning datasets on continuous variables. Instead of using quantum computers only to assist deep learning, as previous approaches have suggested, we use deep learning to extract a low-dimensional binary representation of data, suitable for processing on relatively small quantum computers. Then, the quantum hardware and deep learning architecture work together to train an unsupervised generative model. We demonstrate this concept using 1644 quantum bits of a D-Wave 2000Q quantum device to model a sub-sampled version of the MNIST handwritten digit dataset with 16 × 16 continuous valued pixels. Although we illustrate this concept on a quantum annealer, adaptations to other quantum platforms, such as ion-trap technologies or superconducting gate-model architectures, could be explored within this flexible framework.

A noise model for the evaluation of defect states in solar cells

PubMed Central

Landi, G.; Barone, C.; Mauro, C.; Neitzert, H. C.; Pagano, S.

2016-01-01

A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy. PMID:27412097

Modeling Complex Nonlinear Optical Systems

DTIC Science & Technology

2006-07-01

L .k cycycyT kzk kzkkVxV kzkxTzVzTxVV ω β ββ κ 3 trapping cases (GS: ω(v=0) ≈ 0.96) |),,0(| tzxE =+ 2. Trapping into one defect...sech1 2 1 ),(sech2 where ),1)((tanh1 ),5;()()5;()( 22 222 2 22 1 22 21 . ., ., ., .- .k cycycyT kzk kzkkVxV kzkxTzVzTxVV L

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Long, Pengyu; Huang, Jun Z.; Povolotskyi, Michael; Sarangapani, Prasad; Valencia-Zapata, Gustavo A.; Kubis, Tillmann; Rodwell, Mark J. W.; Klimeck, Gerhard

2018-05-01

Tunnel Field Effect Transistors (FETs) have the potential to achieve steep Subthreshold Swing (S.S.) below 60 mV/dec, but their S.S. could be limited by trap-assisted tunneling (TAT) due to interface traps. In this paper, the effect of trap energy and location on OFF-current (IOFF) of tunnel FETs is evaluated systematically using an atomistic trap level representation in a full quantum transport simulation. Trap energy levels close to band edges cause the highest leakage. Wave function penetration into the surrounding oxide increases the TAT current. To estimate the effects of multiple traps, we assume that the traps themselves do not interact with each other and as a whole do not modify the electrostatic potential dramatically. Within that model limitation, this numerical metrology study points to the critical importance of TAT in the IOFF in tunnel FETs. The model shows that for Dit higher than 1012/(cm2 eV) IO F F is critically increased with a degraded IO N/IO F F ratio of the tunnel FET. In order to have an IO N/IO F F ratio higher than 104, the acceptable Dit near Ev should be controlled to no larger than 1012/(cm2 eV) .

High-Fidelity Preservation of Quantum Information During Trapped-Ion Transport

NASA Astrophysics Data System (ADS)

Kaufmann, Peter; Gloger, Timm F.; Kaufmann, Delia; Johanning, Michael; Wunderlich, Christof

2018-01-01

A promising scheme for building scalable quantum simulators and computers is the synthesis of a scalable system using interconnected subsystems. A prerequisite for this approach is the ability to faithfully transfer quantum information between subsystems. With trapped atomic ions, this can be realized by transporting ions with quantum information encoded into their internal states. Here, we measure with high precision the fidelity of quantum information encoded into hyperfine states of a Yb171 + ion during ion transport in a microstructured Paul trap. Ramsey spectroscopy of the ion's internal state is interleaved with up to 4000 transport operations over a distance of 280 μ m each taking 12.8 μ s . We obtain a state fidelity of 99.9994 (-7+6) % per ion transport.

Intrinsic charge trapping in amorphous oxide films: status and challenges

NASA Astrophysics Data System (ADS)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Universal Expression of Efficiency at Maximum Power: A Quantum-Mechanical Brayton Engine Working with a Single Particle Confined in a Power-Law Trap

NASA Astrophysics Data System (ADS)

Ye, Zhuo-Lin; Li, Wei-Sheng; Lai, Yi-Ming; He, Ji-Zhou; Wang, Jian-Hui

2015-12-01

We propose a quantum-mechanical Brayton engine model that works between two superposed states, employing a single particle confined in an arbitrary power-law trap as the working substance. Applying the superposition principle, we obtain the explicit expressions of the power and efficiency, and find that the efficiency at maximum power is bounded from above by the function: η+ = θ/(θ + 1), with θ being a potential-dependent exponent. Supported by the National Natural Science Foundation of China under Grant Nos. 11505091, 11265010, and 11365015, and the Jiangxi Provincial Natural Science Foundation under Grant No. 20132BAB212009

Semiclassical approach to finite-temperature quantum annealing with trapped ions

NASA Astrophysics Data System (ADS)

Raventós, David; Graß, Tobias; Juliá-Díaz, Bruno; Lewenstein, Maciej

2018-05-01

Recently it has been demonstrated that an ensemble of trapped ions may serve as a quantum annealer for the number-partitioning problem [Nat. Commun. 7, 11524 (2016), 10.1038/ncomms11524]. This hard computational problem may be addressed by employing a tunable spin-glass architecture. Following the proposal of the trapped-ion annealer, we study here its robustness against thermal effects; that is, we investigate the role played by thermal phonons. For the efficient description of the system, we use a semiclassical approach, and benchmark it against the exact quantum evolution. The aim is to understand better and characterize how the quantum device approaches a solution of an otherwise difficult to solve NP-hard problem.

Parallel Transport Quantum Logic Gates with Trapped Ions.

PubMed

de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

2016-02-26

We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

Effects of surface and interface traps on exciton and multi-exciton dynamics in core/shell quantum dots

NASA Astrophysics Data System (ADS)

Bozio, Renato; Righetto, Marcello; Minotto, Alessandro

2017-08-01

Exciton interactions and dynamics are the most important factors determining the exceptional photophysical properties of semiconductor quantum dots (QDs). In particular, best performances have been obtained for ingeniously engineered core/shell QDs. We have studied two factors entering in the exciton decay dynamics with adverse effects for the luminescence efficiency: exciton trapping at surface and interface traps, and non-radiative Auger recombination in QDs carrying either net charges or multiple excitons. In this work, we present a detailed study into the optical absorption, fluorescence dynamics and quantum yield, as well as ultrafast transient absorption properties of CdSe/CdS, CdSe/Cd0.5Zn0.5S, and CdSe/ZnS QDs as a function of shell thickness. It turns out that de-trapping processes play a pivotal role in determining steady state emission properties. By studying the excitation dependent photoluminescence quantum yields (PLQY) in different CdSe/CdxZn1-xS (x = 0, 0.5, 1) QDs, we demonstrate the different role played by hot and cold carrier trapping rates in determining fluorescence quantum yields. Finally, the use of global analysis allows us untangling the complex ultrafast transient absorption signals. Smoothing of interface potential, together with effective surface passivation, appear to be crucial factors in slowing down both Auger-based and exciton trapping recombination processes.

Tunable spin-spin interactions and entanglement of ions in separate potential wells.

PubMed

Wilson, A C; Colombe, Y; Brown, K R; Knill, E; Leibfried, D; Wineland, D J

2014-08-07

Quantum simulation--the use of one quantum system to simulate a less controllable one--may provide an understanding of the many quantum systems which cannot be modelled using classical computers. Considerable progress in control and manipulation has been achieved for various quantum systems, but one of the remaining challenges is the implementation of scalable devices. In this regard, individual ions trapped in separate tunable potential wells are promising. Here we implement the basic features of this approach and demonstrate deterministic tuning of the Coulomb interaction between two ions, independently controlling their local wells. The scheme is suitable for emulating a range of spin-spin interactions, but to characterize the performance of our set-up we select one that entangles the internal states of the two ions with a fidelity of 0.82(1) (the digit in parentheses shows the standard error of the mean). Extension of this building block to a two-dimensional network, which is possible using ion-trap microfabrication processes, may provide a new quantum simulator architecture with broad flexibility in designing and scaling the arrangement of ions and their mutual interactions. To perform useful quantum simulations, including those of condensed-matter phenomena such as the fractional quantum Hall effect, an array of tens of ions might be sufficient.

Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks

NASA Astrophysics Data System (ADS)

Atanassova, E.; Stojadinović, N.; Spassov, D.; Manić, I.; Paskaleva, A.

2013-05-01

The time-dependent dielectric breakdown (TDDB) characteristics of 7 nm pure and lightly Al-doped Ta2O5 (equivalent oxide thickness of 2.2 and 1.5 nm, respectively) with W gate electrodes in MOS capacitor configuration are studied using gate injection and constant voltage stress. The effect of both the process-induced defects and the dopant on the breakdown distribution, and on the extracted Weibull slope values, are discussed. The pre-existing traps which provoke weak spots dictate early breakdowns. Their effect is compounded of both the stress-induced new traps generation (percolation model is valid) and the inevitable lower-k interface layer in the region with long time-to-breakdown. The domination of one of these competitive effects defines the mechanism of degradation: the trapping at pre-existing traps appears to dominate in Ta2O5; Al doping reduces defects in Ta2O5, the generation of new traps prevails over the charge trapping in the doped samples, and the mechanism of breakdown is more adequate to the percolation concept. The doping of high-k Ta2O5 even with small amount (5 at.%) may serve as an engineering solution for improving its TDDB characteristics and reliability.

Double quantum dot memristor

NASA Astrophysics Data System (ADS)

Li, Ying; Holloway, Gregory W.; Benjamin, Simon C.; Briggs, G. Andrew D.; Baugh, Jonathan; Mol, Jan A.

2017-08-01

Memristive systems are generalizations of memristors, which are resistors with memory. In this paper, we present a quantum description of quantum dot memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realizing memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e., switching of a trapped charge in the vicinity of the device. We show that quantum dot memristive systems have hysteresis current-voltage characteristics and quantum jump-induced stochastic behavior. While our experiment requires low temperatures, the same setup could, in principle, be realized with a suitable single-molecule transistor and operated at or near room temperature.

Rydberg blockade in three-atom systems

NASA Astrophysics Data System (ADS)

Barredo, Daniel; Ravets, Sylvain; Labuhn, Henning; Beguin, Lucas; Vernier, Aline; Chicireanu, Radu; Nogrette, Florence; Lahaye, Thierry; Browaeys, Antoine

2014-05-01

The control of individual neutral atoms in arrays of optical tweezers is a promising avenue for quantum science and technology. Here we demonstrate unprecedented control over a system of three Rydberg atoms arranged in linear and triangular configurations. The interaction between Rydberg atoms results in the observation of an almost perfect van der Waals blockade. When the single-atom Rabi frequency for excitation to the Rydberg state is comparable to the interaction energy, we directly observe the anisotropy of the interaction between nD-states. Using the independently measured two-body interaction energy shifts we fully reproduce the dynamics of the three-atom system with a model based on a master equation without any adjustable parameter. Combined with our ability to trap single atoms in arbitrary patterns of 2D arrays of up to 100 traps separated by a few microns, these results are very promising for a scalable implementation of quantum simulation of frustrated quantum magnetism with Rydberg atoms.

Forbidden atomic transitions driven by an intensity-modulated laser trap.

PubMed

Moore, Kaitlin R; Anderson, Sarah E; Raithel, Georg

2015-01-20

Spectroscopy is an essential tool in understanding and manipulating quantum systems, such as atoms and molecules. The model describing spectroscopy includes the multipole-field interaction, which leads to established spectroscopic selection rules, and an interaction that is quadratic in the field, which is not often employed. However, spectroscopy using the quadratic (ponderomotive) interaction promises two significant advantages over spectroscopy using the multipole-field interaction: flexible transition rules and vastly improved spatial addressability of the quantum system. Here we demonstrate ponderomotive spectroscopy by using optical-lattice-trapped Rydberg atoms, pulsating the lattice light and driving a microwave atomic transition that would otherwise be forbidden by established spectroscopic selection rules. This ability to measure frequencies of previously inaccessible transitions makes possible improved determinations of atomic characteristics and constants underlying physics. The spatial resolution of ponderomotive spectroscopy is orders of magnitude better than the transition frequency would suggest, promising single-site addressability in dense particle arrays for quantum computing applications.

Control landscapes are almost always trap free: a geometric assessment

NASA Astrophysics Data System (ADS)

Russell, Benjamin; Rabitz, Herschel; Wu, Re-Bing

2017-05-01

A proof is presented that almost all closed, finite dimensional quantum systems have trap free (i.e. free from local optima) landscapes for a large and physically general class of circumstances, which includes qubit evolutions in quantum computing. This result offers an explanation for why gradient-based methods succeed so frequently in quantum control. The role of singular controls is analyzed using geometric tools in the case of the control of the propagator, and thus in the case of observables as well. Singular controls have been implicated as a source of landscape traps. The conditions under which singular controls can introduce traps, and thus interrupt the progress of a control optimization, are discussed and a geometrical characterization of the issue is presented. It is shown that a control being singular is not sufficient to cause control optimization progress to halt, and sufficient conditions for a trap free landscape are presented. It is further shown that the local surjectivity (full rank) assumption of landscape analysis can be refined to the condition that the end-point map is transverse to each of the level sets of the fidelity function. This mild condition is shown to be sufficient for a quantum system’s landscape to be trap free. The control landscape is shown to be trap free for all but a null set of Hamiltonians using a geometric technique based on the parametric transversality theorem. Numerical evidence confirming this analysis is also presented. This new result is the analogue of the work of Altifini, wherein it was shown that controllability holds for all but a null set of quantum systems in the dipole approximation. These collective results indicate that the availability of adequate control resources remains the most physically relevant issue for achieving high fidelity control performance while also avoiding landscape traps.

Response to defects in multipartite and bipartite entanglement of isotropic quantum spin networks

NASA Astrophysics Data System (ADS)

Roy, Sudipto Singha; Dhar, Himadri Shekhar; Rakshit, Debraj; SenDe, Aditi; Sen, Ujjwal

2018-05-01

Quantum networks are an integral component in performing efficient computation and communication tasks that are not accessible using classical systems. A key aspect in designing an effective and scalable quantum network is generating entanglement between its nodes, which is robust against defects in the network. We consider an isotropic quantum network of spin-1/2 particles with a finite fraction of defects, where the corresponding wave function of the network is rotationally invariant under the action of local unitaries. By using quantum information-theoretic concepts like strong subadditivity of von Neumann entropy and approximate quantum telecloning, we prove analytically that in the presence of defects, caused by loss of a finite fraction of spins, the network, composed of a fixed numbers of lattice sites, sustains genuine multisite entanglement and at the same time may exhibit finite moderate-range bipartite entanglement, in contrast to the network with no defects.

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

Photochemical Creation of Fluorescent Quantum Defects in Semiconducting Carbon Nanotube Hosts.

PubMed

Wu, Xiaojian; Kim, Mijin; Kwon, Hyejin; Wang, YuHuang

2018-01-15

Quantum defects are an emerging class of synthetic single-photon emitters that hold vast potential for near-infrared imaging, chemical sensing, materials engineering, and quantum information processing. Herein, we show that it is possible to optically direct the synthetic creation of molecularly tunable fluorescent quantum defects in semiconducting single-walled carbon nanotube hosts through photochemical reactions. By exciting the host semiconductor with light that resonates with its electronic transition, we find that halide-containing aryl groups can covalently bond to the sp 2 carbon lattice. The introduced quantum defects generate bright photoluminescence that allows tracking of the reaction progress in situ. We show that the reaction is independent of temperature but correlates strongly with the photon energy used to drive the reaction, suggesting a photochemical mechanism rather than photothermal effects. This type of photochemical reactions opens the possibility to control the synthesis of fluorescent quantum defects using light and may enable lithographic patterning of quantum emitters with electronic and molecular precision. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

DOE PAGES

Gul, R.; Roy, U. N.; James, R. B.

2017-03-15

In this paper, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτ e) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trappingmore » and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (V Cd -) were identified as a dominant trap. The V Cd - were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at E v + 0.36 eV and E v + 1.1 eV, E c + 76 meV and E v + 0.61 eV, E v + 36 meV and E v + 0.86 eV, E v + 0.52 eV and E c + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (N t), and capture cross-section (σ) and hence trapping (t t) and de-trapping (t dt) times. Finally, the dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.« less

An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; James, R. B.

In this paper, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτ e) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trappingmore » and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (V Cd -) were identified as a dominant trap. The V Cd - were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at E v + 0.36 eV and E v + 1.1 eV, E c + 76 meV and E v + 0.61 eV, E v + 36 meV and E v + 0.86 eV, E v + 0.52 eV and E c + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (N t), and capture cross-section (σ) and hence trapping (t t) and de-trapping (t dt) times. Finally, the dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.« less

Response of the Higgs amplitude mode of superfluid Bose gases in a three-dimensional optical lattice

NASA Astrophysics Data System (ADS)

Nagao, Kazuma; Takahashi, Yoshiro; Danshita, Ippei

2018-04-01

We study the Higgs mode of superfluid Bose gases in a three-dimensional optical lattice, which emerges near the quantum phase transition to the Mott insulator at commensurate fillings. Specifically, we consider responses of the Higgs mode to temporal modulations of the onsite interaction and the hopping energy. In order to calculate the response functions including the effects of quantum and thermal fluctuations, we map the Bose-Hubbard model onto an effective pseudospin-1 model and use a perturbative expansion based on the imaginary-time Green's function theory. We also include the effects of an inhomogeneous trapping potential by means of a local density approximation. We find that the response function for the hopping modulation is equal to that for the interaction modulation within our approximation. At the unit filling rate and in the absence of a trapping potential, we show that the Higgs mode can exist as a sharp resonance peak in the dynamical susceptibilities at typical temperatures. However, the resonance peak is significantly broadened due to the trapping potential when the modulations are applied globally to the entire system. We suggest that the Higgs mode can be detected as a sharp resonance peak by partial modulations around the trap center.

Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

PubMed

Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

2017-09-01

An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

Charge reconfiguration in arrays of quantum dots

NASA Astrophysics Data System (ADS)

Bayer, Johannes C.; Wagner, Timo; Rugeramigabo, Eddy P.; Haug, Rolf J.

2017-12-01

Semiconductor quantum dots are potential building blocks for scalable qubit architectures. Efficient control over the exchange interaction and the possibility of coherently manipulating electron states are essential ingredients towards this goal. We studied experimentally the shuttling of electrons trapped in serial quantum dot arrays isolated from the reservoirs. The isolation hereby enables a high degree of control over the tunnel couplings between the quantum dots, while electrons can be transferred through the array by gate voltage variations. Model calculations are compared with our experimental results for double, triple, and quadruple quantum dot arrays. We are able to identify all transitions observed in our experiments, including cotunneling transitions between distant quantum dots. The shuttling of individual electrons between quantum dots along chosen paths is demonstrated.

Quantum simulation of interacting spin models with trapped ions

NASA Astrophysics Data System (ADS)

Islam, Kazi Rajibul

The quantum simulation of complex many body systems holds promise for understanding the origin of emergent properties of strongly correlated systems, such as high-Tc superconductors and spin liquids. Cold atomic systems provide an almost ideal platform for quantum simulation due to their excellent quantum coherence, initialization and readout properties, and their ability to support several forms of interactions. In this thesis, I present experiments on the quantum simulation of long range Ising models in the presence of transverse magnetic fields with a chain of up to sixteen ultracold 171Yb+ ions trapped in a linear radio frequency Paul trap. Two hyperfine levels in each of the 171Yb+ ions serve as the spin-1/2 systems. We detect the spin states of the individual ions by observing state-dependent fluorescence with single site resolution, and can directly measure any possible spin correlation function. The spin-spin interactions are engineered by applying dipole forces from precisely tuned lasers whose beatnotes induce stimulated Raman transitions that couple virtually to collective phonon modes of the ion motion. The Ising couplings are controlled, both in sign and strength with respect to the effective transverse field, and adiabatically manipulated to study various aspects of this spin model, such as the emergence of a quantum phase transition in the ground state and spin frustration due to competing antiferromagnetic interactions. Spin frustration often gives rise to a massive degeneracy in the ground state, which can lead to entanglement in the spin system. We detect and characterize this frustration induced entanglement in a system of three spins, demonstrating the first direct experimental connection between frustration and entanglement. With larger numbers of spins we also vary the range of the antiferromagnetic couplings through appropriate laser tunings and observe that longer range interactions reduce the excitation energy and thereby frustrate the ground state order. This system can potentially be scaled up to study a wide range of fully connected spin networks with a few dozens of spins, where the underlying theory becomes intractable on a classical computer.

Positron trapping at defects in copper oxide superconductors

NASA Astrophysics Data System (ADS)

McMullen, T.; Jena, P.; Khanna, S. N.; Li, Yi; Jensen, Kjeld O.

1991-05-01

Positron states and lifetimes at defects in the copper oxide superconductors La2-xSrxCuO4, YBa2Cu3O7-x, and Bi2Sr2CaCu2O8+x are calculated with use of the superposed-atom model. In the Bi2Sr2CaCu2O8+x compound, we find that the smaller metal-ion vacancies appear to only bind positrons weakly, while missing oxygens do not trap positrons. In contrast, metal-ion vacancies in La2-xSrxCuO4 and YBa2Cu3O7-x bind positrons by ~1 eV, and oxygen-related defects appear to be the weak-binding sites in these materials. The sites that bind positrons only weakly, by energies ~kBT, are of particular interest in view of the complex temperature dependences of the annihilation characteristics that are observed in these materials.

Blueprint for a microwave trapped ion quantum computer.

PubMed

Lekitsch, Bjoern; Weidt, Sebastian; Fowler, Austin G; Mølmer, Klaus; Devitt, Simon J; Wunderlich, Christof; Hensinger, Winfried K

2017-02-01

The availability of a universal quantum computer may have a fundamental impact on a vast number of research fields and on society as a whole. An increasingly large scientific and industrial community is working toward the realization of such a device. An arbitrarily large quantum computer may best be constructed using a modular approach. We present a blueprint for a trapped ion-based scalable quantum computer module, making it possible to create a scalable quantum computer architecture based on long-wavelength radiation quantum gates. The modules control all operations as stand-alone units, are constructed using silicon microfabrication techniques, and are within reach of current technology. To perform the required quantum computations, the modules make use of long-wavelength radiation-based quantum gate technology. To scale this microwave quantum computer architecture to a large size, we present a fully scalable design that makes use of ion transport between different modules, thereby allowing arbitrarily many modules to be connected to construct a large-scale device. A high error-threshold surface error correction code can be implemented in the proposed architecture to execute fault-tolerant operations. With appropriate adjustments, the proposed modules are also suitable for alternative trapped ion quantum computer architectures, such as schemes using photonic interconnects.

Josephson oscillation and self-trapping in momentum space

NASA Astrophysics Data System (ADS)

Zheng, Yi; Feng, Shiping; Yang, Shi-Jie

2018-04-01

The Creutz ladder model is studied in the presence of unconventional flux induced by complex tunneling rates along and between the two legs. In the vortex phase, the double-minima band structure is regarded as a double well. By introducing a tunable coupling between the two momentum minima, we demonstrate a phenomenon of Josephson oscillations in momentum space. The condensate density locked in one of the momentum valleys is referred to as macroscopic quantum self-trapping. The on-site interaction of the lattice provides an effective analogy to the double-well model within the two-mode approximation which allows for a quantitative understanding of the Josephson effect and the self-trapping in momentum space.

Model for thickness dependence of radiation charging in MOS structures

NASA Technical Reports Server (NTRS)

Viswanathan, C. R.; Maserjian, J.

1976-01-01

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Why Chemical Vapor Deposition Grown MoS2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain ab Initio Analysis.

PubMed

Li, Linqiu; Long, Run; Prezhdo, Oleg V

2018-06-13

Two-dimensional transition metal dichalcogenides (TMDs) have drawn strong attention due to their unique properties and diverse applications. However, TMD performance depends strongly on material quality and defect morphology. Experiments show that samples grown by chemical vapor deposition (CVD) outperform those obtained by physical vapor deposition (PVD). Experiments also show that CVD samples exhibit vacancy defects, while antisite defects are frequently observed in PVD samples. Our time-domain ab initio study demonstrates that both antisites and vacancies accelerate trapping and nonradiative recombination of charge carriers, but antisites are much more detrimental than vacancies. Antisites create deep traps for both electrons and holes, reducing energy gaps for recombination, while vacancies trap primarily holes. Antisites also perturb band-edge states, creating significant overlap with the trap states. In comparison, vacancy defects overlap much less with the band-edge states. Finally, antisites can create pairs of electron and hole traps close to the Fermi energy, allowing trapping by thermal activation from the ground state and strongly contributing to charge scattering. As a result, antisites accelerate charge recombination by more than a factor of 8, while vacancies enhance the recombination by less than a factor of 2. Our simulations demonstrate a general principle that missing atoms are significantly more benign than misplaced atoms, such as antisites and adatoms. The study rationalizes the existing experimental data, provides theoretical insights into the diverse behavior of different classes of defects, and generates guidelines for defect engineering to achieve high-performance electronic, optoelectronic, and solar-cell devices.

Unraveling energy conversion modeling in the intrinsic persistent upconverted luminescence of solids: a study of native point defects in antiferromagnetic Er2O3.

PubMed

Huang, Bolong

2016-05-11

We investigated the mechanism of the intrinsic persistent luminescence of Er2O3 in the A-type lattice based on first-principles calculations. We found that the native point defects were engaged in mutual subtle interactions in the form of chemical reactions between different charge states. The release of energy related to lattice distortion facilitates the conversion of energy for electrons to be transported between the valence band and the trap levels or even between the deep trap levels so as to generate persistent luminescence. The defect transitions that take place along the zero-phonon line release energy to enable optical transitions, with the exact amount of negative effective correlation energy determined by the lattice distortions. Our calculations on the thermodynamic transition levels confirm that both the visible and NIR experimentally observed intrinsic persistent luminescence (phosphor or afterglow) are related to the thermodynamic transition levels of oxygen-related defects, and the thermodynamic transition levels within different charge states for these defects are independent of the chemical potentials of the given species. Lattice distortion defects such as anion Frenkel (a-Fr) pair defects play an important role in transporting O-related defects between different lattice sites. To obtain red persistent luminescence that matches the biological therapeutic window, it is suggested to increase the electron transition levels between high-coordinated O vacancies and related metastable a-Fr defects; a close-packed core-shell structure is required to quench low-coordinated O-related defects so as to reduce the green band luminescence. We further established a conversed chain reaction (CCR) model to interpret the energy conversion process of persistent luminescence in terms of the inter-reactions of native point defects between different charge states. It is advantageous to use the study of defect levels combined with formation energies to suggest limits to doping energy and explain photostimulated luminescence in terms of native point defects.

LASER APPLICATIONS AND OTHER ASPECTS OF QUANTUM ELECTRONICS Nonlinearity, optoelectronic properties, and their correlations for some mixed ternary defect chalcopyrites

NASA Astrophysics Data System (ADS)

Dutta Roy, S.

2010-12-01

The refractive index, optical nonlinearity, lowest energy band gap, and other related parameters of some mixed defect ternary chalcopyrites are calculated using Levine's bond charge model and its modification developed by Samanta et al. for multinary and mixed compounds. The dependence of the band gap energy on the average quantum number, molecular weight, and anion displacement parameter is shown for the first time, which will be very useful for designing various optoelectronic and nonlinear laser devices.

1D array of dark spot traps formed by counter-propagating nested Gaussian laser beams for trapping and moving atomic qubits

NASA Astrophysics Data System (ADS)

Gillen-Christandl, Katharina; Frazer, Travis D.

2017-04-01

The standing wave of two identical counter-propagating Gaussian laser beams constitutes a 1D array of bright spots that can serve as traps for single neutral atoms for quantum information operations. Detuning the frequency of one of the beams causes the array to start moving, effectively forming a conveyor belt for the qubits. Using a pair of nested Gaussian laser beams with different beam waists, however, forms a standing wave with a 1D array of dark spot traps confined in all dimensions. We have computationally explored the trap properties and limitations of this configuration and, trading off trap depth and frequencies with the number of traps and trap photon scattering rates, we determined the laser powers and beam waists needed for useful 1D arrays of dark spot traps for trapping and transporting atomic qubits in neutral atom quantum computing platforms.

Reply to ``Comment on `Quantum time-of-flight distribution for cold trapped atoms' ''

NASA Astrophysics Data System (ADS)

Ali, Md. Manirul; Home, Dipankar; Majumdar, A. S.; Pan, Alok K.

2008-02-01

In their comment Gomes [Phys. Rev. A 77, 026101 (2008)] have questioned the possibility of empirically testable differences existing between the semiclassical time of flight distribution for cold trapped atoms and a quantum distribution discussed by us recently [Ali , Phys. Rev. A 75, 042110 (2007).]. We argue that their criticism is based on a semiclassical treatment having restricted applicability for a particular trapping potential. Their claim does not preclude, in general, the possibility of differences between the semiclassical calculations and fully quantum results for the arrival time distribution of freely falling atoms.

Reply to 'Comment on 'Quantum time-of-flight distribution for cold trapped atoms''

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ali, Md. Manirul; Home, Dipankar; Pan, Alok K.

2008-02-15

In their comment Gomes et al. [Phys. Rev. A 77, 026101 (2008)] have questioned the possibility of empirically testable differences existing between the semiclassical time of flight distribution for cold trapped atoms and a quantum distribution discussed by us recently [Ali et al., Phys. Rev. A 75, 042110 (2007).]. We argue that their criticism is based on a semiclassical treatment having restricted applicability for a particular trapping potential. Their claim does not preclude, in general, the possibility of differences between the semiclassical calculations and fully quantum results for the arrival time distribution of freely falling atoms.

Trapping of quantum particles and light beams by switchable potential wells

NASA Astrophysics Data System (ADS)

Sonkin, Eduard; Malomed, Boris A.; Granot, Er'El; Marchewka, Avi

2010-09-01

We consider basic dynamical effects in settings based on a pair of local potential traps that may be effectively switched on and off, or suddenly displaced, by means of appropriate control mechanisms, such as scanning tunneling microscopy or photo-switchable quantum dots. The same models, based on the linear Schrödinger equation with time-dependent trapping potentials, apply to the description of optical planar systems designed for the switching of trapped light beams. The analysis is carried out in the analytical form, using exact solutions of the Schrödinger equation. The first dynamical problem considered in this work is the retention of a particle released from a trap which was suddenly turned off, while another local trap was switched on at a distance—immediately or with a delay. In this case, we demonstrate that the maximum of the retention rate is achieved at a specific finite value of the strength of the new trap, and at a finite value of the temporal delay, depending on the distance between the two traps. Another problem is retrapping of the bound particle when the addition of the second trap transforms the single-well setting into a double-well potential (DWP). In that case, we find probabilities for the retrapping into the ground or first excited state of the DWP. We also analyze effects entailed by the application of a kick to a bound particle, the most interesting one being a kick-induced transition between the DWP’s ground and excited states. In the latter case, the largest transition probability is achieved at a particular strength of the kick.

Optimal quantum control of multimode couplings between trapped ion qubits for scalable entanglement.

PubMed

Choi, T; Debnath, S; Manning, T A; Figgatt, C; Gong, Z-X; Duan, L-M; Monroe, C

2014-05-16

We demonstrate entangling quantum gates within a chain of five trapped ion qubits by optimally shaping optical fields that couple to multiple collective modes of motion. We individually address qubits with segmented optical pulses to construct multipartite entangled states in a programmable way. This approach enables high-fidelity gates that can be scaled to larger qubit registers for quantum computation and simulation.

Interatomic interaction effects on second-order momentum correlations and Hong-Ou-Mandel interference of double-well-trapped ultracold fermionic atoms

NASA Astrophysics Data System (ADS)

Brandt, Benedikt B.; Yannouleas, Constantine; Landman, Uzi

2018-05-01

Identification and understanding of the evolution of interference patterns in two-particle momentum correlations as a function of the strength of interatomic interactions are important in explorations of the nature of quantum states of trapped particles. Together with the analysis of two-particle spatial correlations, they offer the prospect of uncovering fundamental symmetries and structure of correlated many-body states, as well as opening vistas into potential control and utilization of correlated quantum states as quantum-information resources. With the use of the second-order density matrix constructed via exact diagonalization of the microscopic Hamiltonian, and an analytic Hubbard-type model, we explore here the systematic evolution of characteristic interference patterns in the two-body momentum and spatial correlation maps of two entangled ultracold fermionic atoms in a double well, for the entire attractive- and repulsive-interaction range. We uncover quantum-statistics-governed bunching and antibunching, as well as interaction-dependent interference patterns, in the ground and excited states, and interpret our results in light of the Hong-Ou-Mandel interference physics, widely exploited in photon indistinguishability testing and quantum-information science.

Phonon-mediated repulsion, sharp transitions and (quasi)self-trapping in the extended Peierls-Hubbard model

NASA Astrophysics Data System (ADS)

Sous, John; Chakraborty, Monodeep; Krems, Roman; Berciu, Mona

We study two identical fermions, or two hard-core bosons, in an infinite chain and coupled to phonons by interactions that modulate their hopping as described by the Peierls/Su-Schrieffer- Heeger (SSH) model. We show that exchange of phonons generates effective nearest-neighbor repulsion between particles and also gives rise to interactions that move the pair as a whole. The two-polaron phase diagram exhibits two sharp transitions, leading to light dimers at strong coupling and the flattening of the dimer dispersion at some critical values of the parameters. This dimer (quasi)self-trapping occurs at coupling strengths where single polarons are mobile. This illustrates that, depending on the strength of the phonon-mediated interactions, the coupling to phonons may completely suppress or strongly enhance quantum transport of correlated particles. NSERC, Stewart Blusson Quantum Matter Institute.

Quantum teleportation with atoms trapped in cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Jaeyoon; Lee, Hai-Woong

2004-09-01

We propose a scheme to implement the quantum teleportation protocol with single atoms trapped in cavities. The scheme is based on the adiabatic passage and the polarization measurement. We show that it is possible to teleport the internal state of an atom trapped in a cavity to an atom trapped in another cavity with the success probability of 1/2 and the fidelity of 1. The scheme is resistant to a number of considerable imperfections such as the violation of the Lamb-Dicke condition, weak atom-cavity coupling, spontaneous emission, and detection inefficiency.

Scalable ion-photon quantum interface based on integrated diffractive mirrors

NASA Astrophysics Data System (ADS)

Ghadimi, Moji; Blūms, Valdis; Norton, Benjamin G.; Fisher, Paul M.; Connell, Steven C.; Amini, Jason M.; Volin, Curtis; Hayden, Harley; Pai, Chien-Shing; Kielpinski, David; Lobino, Mirko; Streed, Erik W.

2017-12-01

Quantum networking links quantum processors through remote entanglement for distributed quantum information processing and secure long-range communication. Trapped ions are a leading quantum information processing platform, having demonstrated universal small-scale processors and roadmaps for large-scale implementation. Overall rates of ion-photon entanglement generation, essential for remote trapped ion entanglement, are limited by coupling efficiency into single mode fibers and scaling to many ions. Here, we show a microfabricated trap with integrated diffractive mirrors that couples 4.1(6)% of the fluorescence from a 174Yb+ ion into a single mode fiber, nearly triple the demonstrated bulk optics efficiency. The integrated optic collects 5.8(8)% of the π transition fluorescence, images the ion with sub-wavelength resolution, and couples 71(5)% of the collected light into the fiber. Our technology is suitable for entangling multiple ions in parallel and overcomes mode quality limitations of existing integrated optical interconnects.

Controlling matter waves in momentum space

NASA Astrophysics Data System (ADS)

Lin, De-Hone

2014-07-01

The transformation design method of momentum for matter waves in a harmonic trap is proposed. As applications, we design (1) a momentum invisibility cloak to control the distribution of a wave function in momentum space, (2) a quantum localization cloak that localizes a matter wave around zero momentum, and (3) the unusual quantum states of momentum space. Comprehension of these momentum cloaks in position space through the Fourier transformation is presented. In contrast to the construct of quantum cloaks in position space, the momentum cloaks presented here can only be reached by controlling the spring parameter of the trap and offering a potential there, without needing to control the effective mass of quantum particles themselves. The presented discussions also provide a possible inspiration to help localize and maintain a quantum state in momentum space by way of controlling the shape of a trap and a supplied potential.

Quantum information processing with long-wavelength radiation

NASA Astrophysics Data System (ADS)

Murgia, David; Weidt, Sebastian; Randall, Joseph; Lekitsch, Bjoern; Webster, Simon; Navickas, Tomas; Grounds, Anton; Rodriguez, Andrea; Webb, Anna; Standing, Eamon; Pearce, Stuart; Sari, Ibrahim; Kiang, Kian; Rattanasonti, Hwanjit; Kraft, Michael; Hensinger, Winfried

To this point, the entanglement of ions has predominantly been performed using lasers. Using long wavelength radiation with static magnetic field gradients provides an architecture to simplify construction of a large scale quantum computer. The use of microwave-dressed states protects against decoherence from fluctuating magnetic fields, with radio-frequency fields used for qubit manipulation. I will report the realisation of spin-motion entanglement using long-wavelength radiation, and a new method to efficiently prepare dressed-state qubits and qutrits, reducing experimental complexity of gate operations. I will also report demonstration of ground state cooling using long wavelength radiation, which may increase two-qubit entanglement fidelity. I will then report demonstration of a high-fidelity long-wavelength two-ion quantum gate using dressed states. Combining these results with microfabricated ion traps allows for scaling towards a large scale ion trap quantum computer, and provides a platform for quantum simulations of fundamental physics. I will report progress towards the operation of microchip ion traps with extremely high magnetic field gradients for multi-ion quantum gates.

Trapped atomic ions for quantum-limited metrology

NASA Astrophysics Data System (ADS)

Wineland, David

2017-04-01

Laser-beam-manipulated trapped ions are a candidate for large-scale quantum information processing and quantum simulation but the basic techniques used can also be applied to quantum-limited metrology and sensing. Some examples being explored at NIST are: 1) As charged harmonic oscillators, trapped ions can be used to sense electric fields; this can be used to characterize the electrode-surface-based noisy electric fields that compromise logic-gate fidelities and may eventually be used as a tool in surface science. 2) Since typical qubit logic gates depend on state-dependent forces, we can adapt the gate dynamics to sensitively detect additional forces. 3) We can use extensions of Bell inequality measurements to further restrict the degree of local realism possessed by Bell states. 4) We also briefly describe experiments for creation of Bell states using Hilbert space engineering. This work is a joint effort including the Ion-Storage group, the Quantum processing group, and the Computing and Communications Theory group at NIST, Boulder. Supported by IARPA, ONR, and the NIST Quantum Information Program.

Squeezed coherent states of motion for ions confined in quadrupole and octupole ion traps

NASA Astrophysics Data System (ADS)

Mihalcea, Bogdan M.

2018-01-01

Quasiclassical dynamics of trapped ions is characterized by applying the time dependent variational principle (TDVP) on coherent state orbits, in case of quadrupole and octupole combined (Paul and Penning) or radiofrequency (RF) traps. A dequantization algorithm is proposed, by which the classical Hamilton (energy) function associated to the system results as the expectation value of the quantum Hamiltonian on squeezed coherent states. We develop such method and particularize the quantum Hamiltonian for both combined and RF nonlinear traps, that exhibit axial symmetry. We also build the classical Hamiltonian functions for the particular traps we considered, and find the classical equations of motion.

Entangling spin-spin interactions of ions in individually controlled potential wells

NASA Astrophysics Data System (ADS)

Wilson, Andrew; Colombe, Yves; Brown, Kenton; Knill, Emanuel; Leibfried, Dietrich; Wineland, David

2014-03-01

Physical systems that cannot be modeled with classical computers appear in many different branches of science, including condensed-matter physics, statistical mechanics, high-energy physics, atomic physics and quantum chemistry. Despite impressive progress on the control and manipulation of various quantum systems, implementation of scalable devices for quantum simulation remains a formidable challenge. As one approach to scalability in simulation, here we demonstrate an elementary building-block of a configurable quantum simulator based on atomic ions. Two ions are trapped in separate potential wells that can individually be tailored to emulate a number of different spin-spin couplings mediated by the ions' Coulomb interaction together with classical laser and microwave fields. We demonstrate deterministic tuning of this interaction by independent control of the local wells and emulate a particular spin-spin interaction to entangle the internal states of the two ions with 0.81(2) fidelity. Extension of the building-block demonstrated here to a 2D-network, which ion-trap micro-fabrication processes enable, may provide a new quantum simulator architecture with broad flexibility in designing and scaling the arrangement of ions and their mutual interactions. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA), ONR, and the NIST Quantum Information Program.

Quantum random walks on congested lattices and the effect of dephasing.

PubMed

Motes, Keith R; Gilchrist, Alexei; Rohde, Peter P

2016-01-27

We consider quantum random walks on congested lattices and contrast them to classical random walks. Congestion is modelled on lattices that contain static defects which reverse the walker's direction. We implement a dephasing process after each step which allows us to smoothly interpolate between classical and quantum random walks as well as study the effect of dephasing on the quantum walk. Our key results show that a quantum walker escapes a finite boundary dramatically faster than a classical walker and that this advantage remains in the presence of heavily congested lattices.

Carrier removal and defect behavior in p-type InP

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Qubit Manipulations Techniques for Trapped-Ion Quantum Information Processing

NASA Astrophysics Data System (ADS)

Gaebler, John; Tan, Ting; Lin, Yiheng; Bowler, Ryan; Jost, John; Meier, Adam; Knill, Emanuel; Leibfried, Dietrich; Wineland, David; Ion Storage Team

2013-05-01

We report recent results on qubit manipulation techniques for trapped-ions towards scalable quantum information processing (QIP). We demonstrate a platform-independent benchmarking protocol for evaluating the performance of Clifford gates, which form a basis for fault-tolerant QIP. We report a demonstration of an entangling gate scheme proposed by Bermudez et al. [Phys. Rev. A. 85, 040302 (2012)] and achieve a fidelity of 0.974(4). This scheme takes advantage of dynamic decoupling which protects the qubit against dephasing errors. It can be applied directly on magnetic-field-insensitive states, and provides a number of simplifications in experimental implementation compared to some other entangling gates with trapped ions. We also report preliminary results on dissipative creation of entanglement with trapped-ions. Creation of an entangled pair does not require discrete logic gates and thus could reduce the level of quantum-coherent control needed for large-scale QIP. Supported by IARPA, ARO contract No. EAO139840, ONR, and the NIST Quantum Information Program.

Cooling the Motion of Diamond Nanocrystals in a Magneto-Gravitational Trap in High Vacuum.

PubMed

Hsu, Jen-Feng; Ji, Peng; Lewandowski, Charles W; D'Urso, Brian

2016-07-22

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. We demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

Cooling the motion of diamond nanocrystals in a magneto-gravitational trap in high vacuum

DOE PAGES

Hsu, Jen -Feng; Ji, Peng; Lewandowski, Charles W.; ...

2016-07-22

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamondmore » nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. Furthermore, we demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.« less

Cooling the Motion of Diamond Nanocrystals in a Magneto-Gravitational Trap in High Vacuum

PubMed Central

Hsu, Jen-Feng; Ji, Peng; Lewandowski, Charles W.; D’Urso, Brian

2016-01-01

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. We demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K. PMID:27444654

Complete devil's staircase and crystal-superfluid transitions in a dipolar XXZ spin chain: a trapped ion quantum simulation

NASA Astrophysics Data System (ADS)

Hauke, Philipp; Cucchietti, Fernando M.; Müller-Hermes, Alexander; Bañuls, Mari-Carmen; Cirac, J. Ignacio; Lewenstein, Maciej

2010-11-01

Systems with long-range interactions show a variety of intriguing properties: they typically accommodate many metastable states, they can give rise to spontaneous formation of supersolids, and they can lead to counterintuitive thermodynamic behavior. However, the increased complexity that comes with long-range interactions strongly hinders theoretical studies. This makes a quantum simulator for long-range models highly desirable. Here, we show that a chain of trapped ions can be used to quantum simulate a one-dimensional (1D) model of hard-core bosons with dipolar off-site interaction and tunneling, equivalent to a dipolar XXZ spin-1/2 chain. We explore the rich phase diagram of this model in detail, employing perturbative mean-field theory, exact diagonalization and quasi-exact numerical techniques (density-matrix renormalization group and infinite time-evolving block decimation). We find that the complete devil's staircase—an infinite sequence of crystal states existing at vanishing tunneling—spreads to a succession of lobes similar to the Mott lobes found in Bose-Hubbard models. Investigating the melting of these crystal states at increased tunneling, we do not find (contrary to similar 2D models) clear indications of supersolid behavior in the region around the melting transition. However, we find that inside the insulating lobes there are quasi-long-range (algebraic) correlations, as opposed to models with nearest-neighbor tunneling, that show exponential decay of correlations.

Control of spin defects in wide-bandgap semiconductors for quantum technologies

DOE PAGES

Heremans, F. Joseph; Yale, Christopher G.; Awschalom, David D.

2016-05-24

Deep-level defects are usually considered undesirable in semiconductors as they typically interfere with the performance of present-day electronic and optoelectronic devices. However, the electronic spin states of certain atomic-scale defects have recently been shown to be promising quantum bits for quantum information processing as well as exquisite nanoscale sensors due to their local environmental sensitivity. In this review, we will discuss recent advances in quantum control protocols of several of these spin defects, the negatively charged nitrogen-vacancy (NV -) center in diamond and a variety of forms of the neutral divacancy (VV 0) complex in silicon carbide (SiC). These defectsmore » exhibit a spin-triplet ground state that can be controlled through a variety of techniques, several of which allow for room temperature operation. Microwave control has enabled sophisticated decoupling schemes to extend coherence times as well as nanoscale sensing of temperature along with magnetic and electric fields. On the other hand, photonic control of these spin states has provided initial steps toward integration into quantum networks, including entanglement, quantum state teleportation, and all-optical control. Electrical and mechanical control also suggest pathways to develop quantum transducers and quantum hybrid systems. In conclusion, the versatility of the control mechanisms demonstrated should facilitate the development of quantum technologies based on these spin defects.« less

Zero-point angular momentum of supersymmetric Penning trap

NASA Astrophysics Data System (ADS)

Zhang, Jian-zu; Xu, Qiang

2000-10-01

The quantum behavior of supersymmetric Penning trap, specially the superpartner of its angular momentum, is investigated in the formulation of multi-dimensional semiunitary transformation of supersymmetric quantum mechanics. In the limit case of vanishing kinetic energy it is found that its lowest angular momentum is 3ℏ/2, which provides a possibility of directly checking the idea of supersymmetric quantum mechanics and thus suggests a possible experimental verification about this prediction.

Macroscopic quantum tunneling escape of Bose-Einstein condensates

NASA Astrophysics Data System (ADS)

Zhao, Xinxin; Alcala, Diego A.; McLain, Marie A.; Maeda, Kenji; Potnis, Shreyas; Ramos, Ramon; Steinberg, Aephraim M.; Carr, Lincoln D.

2017-12-01

Recent experiments on macroscopic quantum tunneling reveal a nonexponential decay of the number of atoms trapped in a quasibound state behind a potential barrier. Through both experiment and theory, we demonstrate this nonexponential decay results from interactions between atoms. Quantum tunneling of tens of thousands of 87Rb atoms in a Bose-Einstein condensate is modeled by a modified Jeffreys-Wentzel-Kramers-Brillouin model, taking into account the effective time-dependent barrier induced by the mean field. Three-dimensional Gross-Pitaevskii simulations corroborate a mean-field result when compared with experiments. However, with one-dimensional modeling using time-evolving block decimation, we present an effective renormalized mean-field theory that suggests many-body dynamics for which a bare mean-field theory may not apply.

Blueprint for a microwave trapped ion quantum computer

PubMed Central

Lekitsch, Bjoern; Weidt, Sebastian; Fowler, Austin G.; Mølmer, Klaus; Devitt, Simon J.; Wunderlich, Christof; Hensinger, Winfried K.

2017-01-01

The availability of a universal quantum computer may have a fundamental impact on a vast number of research fields and on society as a whole. An increasingly large scientific and industrial community is working toward the realization of such a device. An arbitrarily large quantum computer may best be constructed using a modular approach. We present a blueprint for a trapped ion–based scalable quantum computer module, making it possible to create a scalable quantum computer architecture based on long-wavelength radiation quantum gates. The modules control all operations as stand-alone units, are constructed using silicon microfabrication techniques, and are within reach of current technology. To perform the required quantum computations, the modules make use of long-wavelength radiation–based quantum gate technology. To scale this microwave quantum computer architecture to a large size, we present a fully scalable design that makes use of ion transport between different modules, thereby allowing arbitrarily many modules to be connected to construct a large-scale device. A high error–threshold surface error correction code can be implemented in the proposed architecture to execute fault-tolerant operations. With appropriate adjustments, the proposed modules are also suitable for alternative trapped ion quantum computer architectures, such as schemes using photonic interconnects. PMID:28164154

Quantum computing with defects.

PubMed

Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

2010-05-11

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

Silicon as a model ion trap: Time domain measurements of donor Rydberg states

PubMed Central

Vinh, N. Q.; Greenland, P. T.; Litvinenko, K.; Redlich, B.; van der Meer, A. F. G.; Lynch, S. A.; Warner, M.; Stoneham, A. M.; Aeppli, G.; Paul, D. J.; Pidgeon, C. R.; Murdin, B. N.

2008-01-01

One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr–Sommerfeld formula, shifted to the far-infrared because of the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multiphoton processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here, we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent a step toward coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times—key to many well known schemes for quantum computing qubits—for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Left-right correlation in coupled F-center defects.

PubMed

Janesko, Benjamin G

2016-08-07

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of "strong" left-right correlation, symptoms similar to those seen in stretched H2. Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centers may fail for adjacent F-centers.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

Exploring the Kibble-Zurek mechanism with homogeneous Bose gases

NASA Astrophysics Data System (ADS)

Beugnon, Jérôme; Navon, Nir

2017-01-01

Out-of-equilibrium phenomena are a subject of considerable interest in many fields of physics. Ultracold quantum gases, which are extremely clean, well-isolated and highly controllable systems, offer ideal platforms to investigate this topic. The recent progress in tailoring trapping potentials now allows the experimental production of homogeneous samples in custom geometries, which is a key advance for studies of the emergence of coherence in interacting quantum systems. Here we review recent experiments in which temperature quenches have been performed across the Bose-Einstein condensation phase transition in an annular geometry and in homogeneous 3D and quasi-2D gases. Combined, these experiments comprehensively explore and validate the Kibble-Zurek (KZ) scenario through complementary measurements of correlation functions and density of topological defects. They allow the measurement of KZ scaling laws, the direct confirmation of the ‘freeze-out’ hypothesis that underlies the KZ theory, and the extraction of critical exponents of the Bose-Einstein condensation transition.

Quantum non demolition measurement of cyclotron excitations in a Penning trap

NASA Technical Reports Server (NTRS)

Marzoli, Irene; Tombesi, Paolo

1993-01-01

The quantum non-demolition measurement of the cyclotron excitations of an electron confined in a Penning trap could be obtained by measuring the resonance frequency of the axial motion, which is coupled to the cyclotron motion through the relativistic shift of the electron mass.

The role of the tunneling matrix element and nuclear reorganization in the design of quantum-dot cellular automata molecules

NASA Astrophysics Data System (ADS)

Henry, Jackson; Blair, Enrique P.

2018-02-01

Mixed-valence molecules provide an implementation for a high-speed, energy-efficient paradigm for classical computing known as quantum-dot cellular automata (QCA). The primitive device in QCA is a cell, a structure with multiple quantum dots and a few mobile charges. A single mixed-valence molecule can function as a cell, with redox centers providing quantum dots. The charge configuration of a molecule encodes binary information, and device switching occurs via intramolecular electron transfer between dots. Arrays of molecular cells adsorbed onto a substrate form QCA logic. Individual cells in the array are coupled locally via the electrostatic electric field. This device networking enables general-purpose computing. Here, a quantum model of a two-dot molecule is built in which the two-state electronic system is coupled to the dominant nuclear vibrational mode via a reorganization energy. This model is used to explore the effects of the electronic inter-dot tunneling (coupling) matrix element and the reorganization energy on device switching. A semi-classical reduction of the model also is made to investigate the competition between field-driven device switching and the electron-vibrational self-trapping. A strong electron-vibrational coupling (high reorganization energy) gives rise to self-trapping, which inhibits the molecule's ability to switch. Nonetheless, there remains an expansive area in the tunneling-reorganization phase space where molecules can support adequate tunneling. Thus, the relationship between the tunneling matrix element and the reorganization energy affords significant leeway in the design of molecules viable for QCA applications.

Metastable defect response in CZTSSe from admittance spectroscopy

DOE PAGES

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; ...

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se) 4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the devicemore » measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.« less

Optical charge state control of spin defects in 4H-SiC

DOE PAGES

Wolfowicz, Gary; Anderson, Christopher P.; Yeats, Andrew L.; ...

2017-11-30

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading themore » electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. As a result, we develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.« less

Optical charge state control of spin defects in 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolfowicz, Gary; Anderson, Christopher P.; Yeats, Andrew L.

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading themore » electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. As a result, we develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.« less

Modeling of photocurrent and lag signals in amorphous selenium x-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siddiquee, Sinchita; Kabir, M. Z., E-mail: kabir@encs.concordia.ca

2015-07-15

A mathematical model for transient photocurrent and lag signal in x-ray imaging detectors has been developed by considering charge carrier trapping and detrapping in the energy distributed defect states under exponentially distributed carrier generation across the photoconductor. The model for the transient and steady-state carrier distributions and hence the photocurrent has been developed by solving the carrier continuity equation for both holes and electrons. The residual (commonly known as lag signal) current is modeled by solving the trapping rate equations considering the thermal release and trap filling effects. The model is applied to amorphous selenium (a-Se) detectors for both chestmore » radiography and mammography. The authors analyze the dependence of the residual current on various factors, such as x-ray exposure, applied electric field, and temperature. The electron trapping and detrapping mostly determines the residual current in a-Se detectors. The lag signal is more prominent in chest radiographic detector than in mammographic detectors. The model calculations are compared with the published experimental data and show a very good agreement.« less

Defect evolution and impurity migration in Na-implanted ZnO

NASA Astrophysics Data System (ADS)

Neuvonen, Pekka T.; Vines, Lasse; Venkatachalapathy, Vishnukanthan; Zubiaga, Asier; Tuomisto, Filip; Hallén, Anders; Svensson, Bengt G.; Kuznetsov, Andrej Yu.

2011-11-01

Secondary ion mass spectrometry (SIMS) and positron annihilation spectroscopy (PAS) have been applied to study impurity migration and open volume defect evolution in Na+ implanted hydrothermally grown ZnO samples. In contrast to most other elements, the presence of Na tends to decrease the concentration of open volume defects upon annealing and for temperatures above 600∘C, Na exhibits trap-limited diffusion correlating with the concentration of Li. A dominating trap for the migrating Na atoms is most likely Li residing on Zn site, but a systematic analysis of the data suggests that zinc vacancies also play an important role in the trapping process.

Ion traps fabricated in a CMOS foundry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehta, K. K.; Ram, R. J.; Eltony, A. M.

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size.more » This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.« less

Strain broadening of the 1042-nm zero phonon line of the NV- center in diamond: A promising spectroscopic tool for defect tomography

NASA Astrophysics Data System (ADS)

Biktagirov, T. B.; Smirnov, A. N.; Davydov, V. Yu.; Doherty, M. W.; Alkauskas, A.; Gibson, B. C.; Soltamov, V. A.

2017-08-01

The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center's infrared (IR) zero-phonon line (ZPL). We develop a model for these effects that accounts for the strain induced by photodependent microscopic distributions of defects. We apply this model to interpret observed variations of the IR ZPL shape with temperature and photoexcitation conditions. We identify an anomalous temperature-dependent broadening mechanism and that defects other than the substitutional nitrogen center significantly contribute to strain broadening. The former conclusion suggests the presence of a strong Jahn-Teller effect in the center's singlet levels and the latter indicates that major sources of broadening are yet to be identified. These conclusions have important implications for the understanding of the center and the engineering of diamond quantum devices. Finally, we propose that, once the major sources of broadening are identified, the IR ZPL has the potential to be a sensitive spectroscopic tool for probing microscopic strain fields and performing defect tomography.

Study of reactive collisions between electrons and molecular cations using multichannel quantum defect theory: Application to HD{sup +} and BeH{sup +}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pop, N., E-mail: nicolina.pop@upt.ro; Ilie, S.; Motapon, O.

2014-11-24

The present work is aimed at performing the computation of cross sections and Maxwell rate coefficients in the framework of the stepwise version of the Multichannel Quantum Defect Theory (MQDT). Cross sections and rate coefficients suitable for the modelling of the kinetics of HD{sup +} and BeH{sup +} in fusion plasmas and in the stellar atmospheres are presented and discussed. A very good agreement is found between our results for rotational transitions for HD{sup +} and other computations, as well as with experiment.

Spontaneous creation of Kibble-Zurek solitons in a Bose-Einstein condensate

NASA Astrophysics Data System (ADS)

Ferrari, Gabriele

2014-03-01

The Kibble-Zurek mechanism (KZM) describes the spontaneous formation of defects in systems that cross a second-order phase transition at a finite rate. The mechanism was first proposed in the context of cosmology to explain how, during the expansion of the early Universe, the rapid cooling below a critical temperature induced a cosmological phase transition resulting in the creation of domain structures. In fact, the KZM is ubiquitous in nature and regards both classical and quantum phase transitions. Experimental evidences have been observed in superfluid 3He, in superconducting films and rings and in ion chains. Bose-Einstein condensation in trapped dilute gases has been considered as an ideal platform for the KZM as the system is extremely clean, controllable and particularly suitable for the investigation of effects arising from the spatial inhomogeneities induced by the confinement. Quantized vortices produced in a pancake-shaped condensate by a fast quench across the transition temperature have been already observed, but their limited statistics prevented a test of the KZM scaling. The KZM has been studied across the quantum superfluid to Mott insulator transition with atomic gases trapped in optical lattices. Here we report on the observation of solitons resulting from phase defects of the order parameter, spontaneously created in an elongated Bose-Einstein condensate of sodium atoms. We show that the number of solitons in the final condensate grows according to a power-law as a function of the rate at which the transition is crossed, consistent with the expectations of the KZM, and provide the first indication of the KZM scaling with the sonic horizon. We support our observations by comparing the estimated speed of the transition front in the gas to the speed of the sonic causal horizon, showing that solitons are produced in a regime of inhomogeneous Kibble-Zurek mechanism.

Spontaneous creation of Kibble-Zurek solitons in a Bose-Einstein condensate

NASA Astrophysics Data System (ADS)

Ferrari, Gabriele

2014-05-01

The Kibble-Zurek mechanism (KZM) describes the spontaneous formation of defects in systems that cross a second-order phase transition at a finite rate. The mechanism was first proposed in the context of cosmology to explain how, during the expansion of the early Universe, the rapid cooling below a critical temperature induced a cosmological phase transition resulting in the creation of domain structures. In fact, the KZM is ubiquitous in nature and regards both classical and quantum phase transitions. Experimental evidences have been observed in superfluid 3He, in superconducting films and rings and in ion chains. Bose-Einstein condensation in trapped dilute gases has been considered as an ideal platform for the KZM as the system is extremely clean, controllable and particularly suitable for the investigation of effects arising from the spatial inhomogeneities induced by the confinement. Quantized vortices produced in a pancake-shaped condensate by a fast quench across the transition temperature have been already observed, but their limited statistics prevented a test of the KZM scaling. The KZM has been studied across the quantum superfluid to Mott insulator transition with atomic gases trapped in optical lattices. Here we report on the observation of solitons resulting from phase defects of the order parameter, spontaneously created in an elongated Bose-Einstein condensate of sodium atoms. We show that the number of solitons in the final condensate grows according to a power-law as a function of the rate at which the transition is crossed, consistent with the expectations of the KZM, and provide the first indication of the KZM scaling with the sonic horizon. We support our observations by comparing the estimated speed of the transition front in the gas to the speed of the sonic causal horizon, showing that solitons are produced in a regime of inhomogeneous Kibble-Zurek mechanism. We will address the role of vortex-solitons in our measurements.

NH2- in a cold ion trap with He buffer gas: Ab initio quantum modeling of the interaction potential and of state-changing multichannel dynamics

NASA Astrophysics Data System (ADS)

Hernández Vera, Mario; Yurtsever, Ersin; Wester, Roland; Gianturco, Franco A.

2018-05-01

We present an extensive range of accurate ab initio calculations, which map in detail the spatial electronic potential energy surface that describes the interaction between the molecular anion NH2 - (1A1) in its ground electronic state and the He atom. The time-independent close-coupling method is employed to generate the corresponding rotationally inelastic cross sections, and then the state-changing rates over a range of temperatures from 10 to 30 K, which is expected to realistically represent the experimental trapping conditions for this ion in a radio frequency ion trap filled with helium buffer gas. The overall evolutionary kinetics of the rotational level population involving the molecular anion in the cold trap is also modelled during a photodetachment experiment and analyzed using the computed rates. The present results clearly indicate the possibility of selectively detecting differences in behavior between the ortho- and para-anions undergoing photodetachment in the trap.

Quantum magnetism in different AMO systems.

NASA Astrophysics Data System (ADS)

Rey, Ana Maria

One of the most important goals of modern quantum sciences is to learn how to control and entangle many-body systems and use them to make powerful and improved quantum devices, materials and technologies. However, since performing full state tomography does not scale favorably with the number of particles, as the size of quantum systems grow, it becomes extremely challenging to identify, and quantify the buildup of quantum correlations and coherence. In this talk I will report on a protocol that we have developed and experimentally demonstrated in a trapped ion quantum magnet in a Penning trap, which can perform quantum simulations of Ising spin models. In those experiments strong spin-spin interactions can be engineered through optical dipole forces that excite phonons of the crystals. The number of ions can be varied from tens to hundreds with high fidelity control. The protocol uses time reversal of the many-body dynamics, to measure out-of-time-order correlation functions (OTOCs). By measuring a family of OTOCs as a function of a tunable parameter we obtain fine-grained information about the state of the system encoded in the multiple quantum coherence spectrum, extract the quantum state purity, and demonstrate the build-up of up to 8-body correlations. We also use the protocol and comparisons to a full solution of the master equation to investigate the impact of spin-motion entanglement and decoherence in the quantum dynamics. Future applications of this protocol could enable studies of manybody localization, quantum phase transitions, and tests of the holographic duality between quantum and gravitational systems. Supported by NSF-PHY-1521080, JILA-NSF PFC-1125844, ARO and AFOSR-MURI.

Quantum computation with trapped ions in an optical cavity.

PubMed

Pachos, Jiannis; Walther, Herbert

2002-10-28

Two-qubit logical gates are proposed on the basis of two atoms trapped in a cavity setup and commonly addressed by laser fields. Losses in the interaction by spontaneous transitions are efficiently suppressed by employing adiabatic transitions and the quantum Zeno effect. Dynamical and geometrical conditional phase gates are suggested. This method provides fidelity and a success rate of its gates very close to unity. Hence, it is suitable for performing quantum computation.

Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Myers, Samuel M.

2014-02-01

A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defectsmore » within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.« less

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takamiya, Kengo; Fukushima, Toshiyuki; Yagi, Shuhei

2013-12-04

We have studied photoluminescence (PL) from individual isoelectronic traps formed by nitrogen-nitrogen (NN) pairs in GaAs. Sharp emission lines due to exciton and biexciton were observed from individual isoelectronic traps in nitrogen atomic-layer doped (ALD) GaAs. The binding energy of biexciton bound to individual isoelectronic traps was approximately 8 meV. Both the exciton and biexciton luminescence lines show completely random polarization and no fine-structure splitting. These results are desirable to the application to the quantum cryptography used in the field of quantum information technology.

Aharonov-Bohm effect in the tunnelling of a quantum rotor in a linear Paul trap.

PubMed

Noguchi, Atsushi; Shikano, Yutaka; Toyoda, Kenji; Urabe, Shinji

2014-05-13

Quantum tunnelling is a common fundamental quantum mechanical phenomenon that originates from the wave-like characteristics of quantum particles. Although the quantum tunnelling effect was first observed 85 years ago, some questions regarding the dynamics of quantum tunnelling remain unresolved. Here we realize a quantum tunnelling system using two-dimensional ionic structures in a linear Paul trap. We demonstrate that the charged particles in this quantum tunnelling system are coupled to the vector potential of a magnetic field throughout the entire process, even during quantum tunnelling, as indicated by the manifestation of the Aharonov-Bohm effect in this system. The tunnelling rate of the structures periodically depends on the strength of the magnetic field, whose period is the same as the magnetic flux quantum φ0 through the rotor [(0.99 ± 0.07) × φ0].

A Wave Chaotic Study of Quantum Graphs with Microwave Networks

NASA Astrophysics Data System (ADS)

Fu, Ziyuan

Quantum graphs provide a setting to test the hypothesis that all ray-chaotic systems show universal wave chaotic properties. I study the quantum graphs with a wave chaotic approach. Here, an experimental setup consisting of a microwave coaxial cable network is used to simulate quantum graphs. Some basic features and the distributions of impedance statistics are analyzed from experimental data on an ensemble of tetrahedral networks. The random coupling model (RCM) is applied in an attempt to uncover the universal statistical properties of the system. Deviations from RCM predictions have been observed in that the statistics of diagonal and off-diagonal impedance elements are different. Waves trapped due to multiple reflections on bonds between nodes in the graph most likely cause the deviations from universal behavior in the finite-size realization of a quantum graph. In addition, I have done some investigations on the Random Coupling Model, which are useful for further research.

Probing defects in ZnO nanostructures by Photoluminescence and Positron Annihilation Spectroscopy

NASA Astrophysics Data System (ADS)

Ghosh, Manoranjan; Raychaudhuri, A. K.; Chaudhuri, S. K.; Das, Dipankar

2008-03-01

We have investigated defect related emission in the blue green region (2.2 eV -- 2.5 eV) of ZnO nanostructures having spherical (5 nm-15 nm) as well as those with hexagonal platelet and rod like morphologies (20nm-100 nm), synthesized by solvo-thermal route. This emission show anomalous size dependence. Emission energy near 2.2 eV, shifts to higher energy (2.5 eV) for increase in size beyond 20nm when shape of the nanostructures changes. This change in photoluminescence has a close correlation with the size (and shape) induced change in the positron trapping rate which is directly proportional to the defect concentration. The trapping rates show non-monotonous dependence on size. It increases initially as the size increases (5nm-15nm) and then decreases as the size increases beyond 20nm. While increase of the trapping rate on size reduction is expected due to accumulation of more defects at the surface, the initial dependence of the trapping rate on the size (below 20nm) is anomalous. The data are explained by the presence of defects like Zn vacancy and confinement due to size reduction.

Temperature-dependent radiative and non-radiative dynamics of photo-excited carriers in extremely high-density and small InGaN nanodisks fabricated by neutral-beam etching using bio-nano-templates

NASA Astrophysics Data System (ADS)

Chen, Yafeng; Kiba, Takayuki; Takayama, Junichi; Higo, Akio; Tanikawa, Tomoyuki; Chen, Shula; Samukawa, Seiji; Murayama, Akihiro

2018-05-01

Temperature-dependent radiative and non-radiative dynamics of photoexcited carriers were studied in In0.3Ga0.7N nanodisks (NDs) fabricated from quantum wells (QWs) by neutral-beam etching using bio-nano-templates. The NDs had a diameter of 5 nm, a thickness of 2 and 3 nm, and a sheet density of 2 × 1011 cm-2. The radiative decay time, reflecting the displacement between the electron and hole wavefunctions, is about 0.2 ns; this value is almost constant as a function of temperature in the NDs and not dependent on their thickness. We observed non-exponential decay curves of photoluminescence (PL) in the NDs, particularly at temperatures above 150 K. The thermal activation energies of PL quenching in the NDs are revealed to be about 110 meV, corresponding to the barrier heights of the valence bands in the disks. Therefore, hole escape is deemed responsible for the PL quenching, while thermal activation energies of 12 meV due to the trapping of carriers by defects were dominant in the mother QWs. The above-mentioned non-exponential PL decay curves can be attributed to variations in the rate of hole escape in the NDs because of fluctuations in the valence-band barrier height, which, in turn, is possibly due to compositional fluctuations in the QWs. We found that non-radiative trapping, characteristic of the original QW, also exists in about 1% of the NDs in a form that is not masked by other newly formable defects. Therefore, we suggest that additional defect formation is not significant during our ND fabrication process.

Trade-off between quantum capacitance and thermodynamic stability of defected graphene: an implication for supercapacitor electrodes

NASA Astrophysics Data System (ADS)

Srivastava, Anurag; SanthiBhushan, Boddepalli

2018-03-01

Defects are inevitable most of the times either at the synthesis, handling or processing stage of graphene, causes significant deviation of properties. The present work discusses the influence of vacancy defects on the quantum capacitance as well as thermodynamic stability of graphene, and the nitrogen doping pattern needs to be followed to attain a trade-off between these two. Density Functional Theory (DFT) calculations have been performed to analyze various vacancy defects and different possible nitrogen doping patterns at the vacancy site of graphene, with an implication for supercapacitor electrodes. The results signify that vacancy defect improves the quantum capacitance of graphene at the cost of thermodynamic stability, while the nitrogen functionalization at the vacancy improves thermodynamic stability and quantum capacitance both. It has been observed that functionalizing all the dangling carbons at the defect site with nitrogen is the key to attain high thermodynamic stability as well as quantum capacitance. Furthermore, the results signify the suitability of these functionalized graphenes for anode electrode of high energy density asymmetric supercapacitors.

Defect states and their energetic position and distribution in organic molecular semiconductors

NASA Astrophysics Data System (ADS)

Sharma, Akanksha; Yadav, Sarita; Kumar, Pramod; Ray Chaudhuri, Sumita; Ghosh, Subhasis

2013-04-01

Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

Improving Defect-Based Quantum Emitters in Silicon Carbide via Inorganic Passivation.

PubMed

Polking, Mark J; Dibos, Alan M; de Leon, Nathalie P; Park, Hongkun

2018-01-01

Defect-based color centers in wide-bandgap crystalline solids are actively being explored for quantum information science, sensing, and imaging. Unfortunately, the luminescent properties of these emitters are frequently degraded by blinking and photobleaching that arise from poorly passivated host crystal surfaces. Here, a new method for stabilizing the photoluminescence and charge state of color centers based on epitaxial growth of an inorganic passivation layer is presented. Specifically, carbon antisite-vacancy pairs (CAV centers) in 4H-SiC, which serve as single-photon emitters at visible wavelengths, are used as a model system to demonstrate the power of this inorganic passivation scheme. Analysis of CAV centers with scanning confocal microscopy indicates a dramatic improvement in photostability and an enhancement in emission after growth of an epitaxial AlN passivation layer. Permanent, spatially selective control of the defect charge state can also be achieved by exploiting the mismatch in spontaneous polarization at the AlN/SiC interface. These results demonstrate that epitaxial inorganic passivation of defect-based quantum emitters provides a new method for enhancing photostability, emission, and charge state stability of these color centers. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Can different quantum state vectors correspond to the same physical state? An experimental test

NASA Astrophysics Data System (ADS)

Nigg, Daniel; Monz, Thomas; Schindler, Philipp; Martinez, Esteban A.; Hennrich, Markus; Blatt, Rainer; Pusey, Matthew F.; Rudolph, Terry; Barrett, Jonathan

2016-01-01

A century after the development of quantum theory, the interpretation of a quantum state is still discussed. If a physicist claims to have produced a system with a particular quantum state vector, does this represent directly a physical property of the system, or is the state vector merely a summary of the physicist’s information about the system? Assume that a state vector corresponds to a probability distribution over possible values of an unknown physical or ‘ontic’ state. Then, a recent no-go theorem shows that distinct state vectors with overlapping distributions lead to predictions different from quantum theory. We report an experimental test of these predictions using trapped ions. Within experimental error, the results confirm quantum theory. We analyse which kinds of models are ruled out.

Fast shuttling of a particle under weak spring-constant noise of the moving trap

NASA Astrophysics Data System (ADS)

Lu, Xiao-Jing; Ruschhaupt, A.; Muga, J. G.

2018-05-01

We investigate the excitation of a quantum particle shuttled in a harmonic trap with weak spring-constant colored noise. The Ornstein-Uhlenbeck model for the noise correlation function describes a wide range of possible noises, in particular for short correlation times the white-noise limit examined by Lu et al. [Phys. Rev. A 89, 063414 (2014)], 10.1103/PhysRevA.89.063414 and, by averaging over correlation times, "1 /f flicker noise." We find expressions for the excitation energy in terms of static (independent of trap motion) and dynamical sensitivities, with opposite behavior with respect to shuttling time, and demonstrate that the excitation can be reduced by proper process timing and design of the trap trajectory.

Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics

NASA Astrophysics Data System (ADS)

Zhou, Ru; Niu, Haihong; Ji, Fengwei; Wan, Lei; Mao, Xiaoli; Guo, Huier; Xu, Jinzhang; Cao, Guozhong

2016-11-01

PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large exciton Bohr radius (18 nm). However, the relatively low conduction band (CB) and high-density surface defects of PbS as two major drawbacks for its use in solar cells severely hamper the photovoltaic performance enhancement. In this work, a modified solution-based successive ionic layer adsorption and reaction (SILAR) utilizing mixed cationic precursors of Pb2+ and Cd2+ is explored, and such a scheme offers two benefits, band-structure tailoring and surface passivation. In-situ deposited CdS suppresses the excessive growth of PbS in the mesopores, thereby facilitating the favorable electron injection from PbS to TiO2 in view of the up-shifted CB level of QDs; the intimate interpenetration of two sulfides with each other leads to superior passivation of trap state defects on PbS, which suppresses the interfacial charge recombination. With the construction of photovoltaics based on such a hybrid (Pb,Cd)S/CdS configuration, impressive power conversion efficiency up to 4.08% has been reached, outperforming that of the conventional PbS/CdS pattern (2.95%). This work highlights the great importance of band-structure tailoring and surface passivation for constructing highly efficient PbS QD photovoltaics.

Spatiotemporal accessible solitons in fractional dimensions.

PubMed

Zhong, Wei-Ping; Belić, Milivoj R; Malomed, Boris A; Zhang, Yiqi; Huang, Tingwen

2016-07-01

We report solutions for solitons of the "accessible" type in globally nonlocal nonlinear media of fractional dimension (FD), viz., for self-trapped modes in the space of effective dimension 2

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Investigation of hydrogen interaction with defects in zirconia

NASA Astrophysics Data System (ADS)

Melikhova, O.; Kuriplach, J.; Čížek, J.; Procházka, I.; Brauer, G.; Anwand, W.

2010-04-01

Defect studies of a ZrO2 + 9 mol. % Y2O3 single crystal were performed in this work using a high resolution positron lifetime spectroscopy combined with slow positron implantation spectroscopy. In order to elucidate the nature of positron trapping sites observed experimentally, the structural relaxations of several types of vacancy-like defects in zirconia were performed and positron characteristics for them were calculated. Relaxed atomic configurations of studied defects were obtained by means of ab initio pseudopotential method within the supercell approach. Theoretical calculations indicated that neither oxygen vacancies nor their neutral complexes with substitute yttrium atoms are capable of positron trapping. On the other hand, zirconium vacancies are deep positron traps and are most probably responsible for the saturated positron trapping observed in yttria stabilized zirconia single crystals. However, the calculated positron lifetime for zirconium vacancy is apparently longer than the experimental value corresponding to a single-component spectrum measured for the cubic ZrO2 + 9 mol. % Y2O3 single crystal. It was demonstrated that this effect can be explained by hydrogen trapped in zirconium vacancies. On the basis of structure relaxations, we found that zirconium vacancy - hydrogen complexes represent deep positron traps with the calculated lifetime close to the experimental one. In zirconium vacancy - hydrogen complexes the hydrogen atom forms an O-H bond with one of the nearest neighbour oxygen atoms. The calculated bond length is close to 1 Å.

Voltage-controlled quantum light from an atomically thin semiconductor

NASA Astrophysics Data System (ADS)

Chakraborty, Chitraleema; Kinnischtzke, Laura; Goodfellow, Kenneth M.; Beams, Ryan; Vamivakas, A. Nick

2015-06-01

Although semiconductor defects can often be detrimental to device performance, they are also responsible for the breadth of functionality exhibited by modern optoelectronic devices. Artificially engineered defects (so-called quantum dots) or naturally occurring defects in solids are currently being investigated for applications ranging from quantum information science and optoelectronics to high-resolution metrology. In parallel, the quantum confinement exhibited by atomically thin materials (semi-metals, semiconductors and insulators) has ushered in an era of flatland optoelectronics whose full potential is still being articulated. In this Letter we demonstrate the possibility of leveraging the atomically thin semiconductor tungsten diselenide (WSe2) as a host for quantum dot-like defects. We report that this previously unexplored solid-state quantum emitter in WSe2 generates single photons with emission properties that can be controlled via the application of external d.c. electric and magnetic fields. These new optically active quantum dots exhibit excited-state lifetimes on the order of 1 ns and remarkably large excitonic g-factors of 10. It is anticipated that WSe2 quantum dots will provide a novel platform for integrated solid-state quantum photonics and quantum information processing, as well as a rich condensed-matter physics playground with which to explore the coupling of quantum dots and atomically thin semiconductors.

Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells

NASA Astrophysics Data System (ADS)

Seyyed, Hossein Asadpour; G, Solookinejad; M, Panahi; E Ahmadi, Sangachin

2016-05-01

We proposed a new model for controlling the optical bistability (OB) and optical multistability (OM) in a defect slab doped with four-level GaAs/AlGaAs multiple quantum wells with 15 periods of 17.5 nm GaAs wells and 15-nm Al0.3 Ga0.7As barriers. The effects of biexciton energy renormalization, exciton spin relaxation, and thickness of the slab on the OB and OM properties of the defect slab were theoretically investigated. We found that the transition from OB to OM or vice versa is possible by adjusting the controllable parameters in a lab. Moreover, the transmission, reflection, and absorption properties of the weak probe light through the slab were also discussed in detail.

Quantum random walks on congested lattices and the effect of dephasing

PubMed Central

Motes, Keith R.; Gilchrist, Alexei; Rohde, Peter P.

2016-01-01

We consider quantum random walks on congested lattices and contrast them to classical random walks. Congestion is modelled on lattices that contain static defects which reverse the walker’s direction. We implement a dephasing process after each step which allows us to smoothly interpolate between classical and quantum random walks as well as study the effect of dephasing on the quantum walk. Our key results show that a quantum walker escapes a finite boundary dramatically faster than a classical walker and that this advantage remains in the presence of heavily congested lattices. PMID:26812924

Optoelectronic engineering of colloidal quantum-dot solar cells beyond the efficiency black hole: a modeling approach

NASA Astrophysics Data System (ADS)

Mahpeykar, Seyed Milad; Wang, Xihua

2017-02-01

Colloidal quantum dot (CQD) solar cells have been under the spotlight in recent years mainly due to their potential for low-cost solution-processed fabrication and efficient light harvesting through multiple exciton generation (MEG) and tunable absorption spectrum via the quantum size effect. Despite the impressive advances achieved in charge carrier mobility of quantum dot solids and the cells' light trapping capabilities, the recent progress in CQD solar cell efficiencies has been slow, leaving them behind other competing solar cell technologies. In this work, using comprehensive optoelectronic modeling and simulation, we demonstrate the presence of a strong efficiency loss mechanism, here called the "efficiency black hole", that can significantly hold back the improvements achieved by any efficiency enhancement strategy. We prove that this efficiency black hole is the result of sole focus on enhancement of either light absorption or charge extraction capabilities of CQD solar cells. This means that for a given thickness of CQD layer, improvements accomplished exclusively in optic or electronic aspect of CQD solar cells do not necessarily translate into tangible enhancement in their efficiency. The results suggest that in order for CQD solar cells to come out of the mentioned black hole, incorporation of an effective light trapping strategy and a high quality CQD film at the same time is an essential necessity. Using the developed optoelectronic model, the requirements for this incorporation approach and the expected efficiencies after its implementation are predicted as a roadmap for CQD solar cell research community.

Direct photonic coupling of a semiconductor quantum dot and a trapped ion.

PubMed

Meyer, H M; Stockill, R; Steiner, M; Le Gall, C; Matthiesen, C; Clarke, E; Ludwig, A; Reichel, J; Atatüre, M; Köhl, M

2015-03-27

Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of a Yb^{+} ion. We ameliorate the effect of the 60-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the σ_{z} projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum-state transfer in a hybrid photonic network.

Quantum Algorithmic Readout in Multi-Ion Clocks.

PubMed

Schulte, M; Lörch, N; Leroux, I D; Schmidt, P O; Hammerer, K

2016-01-08

Optical clocks based on ensembles of trapped ions promise record frequency accuracy with good short-term stability. Most suitable ion species lack closed transitions, so the clock signal must be read out indirectly by transferring the quantum state of the clock ions to cotrapped logic ions of a different species. Existing methods of quantum logic readout require a linear overhead in either time or the number of logic ions. Here we describe a quantum algorithmic readout whose overhead scales logarithmically with the number of clock ions in both of these respects. The scheme allows a quantum nondemolition readout of the number of excited clock ions using a single multispecies gate operation which can also be used in other areas of ion trap technology such as quantum information processing, quantum simulations, metrology, and precision spectroscopy.

Study of defects in an electroresistive Au/La2/3Sr1/3MnO3/SrTiO3(001) heterostructure by positron annihilation

NASA Astrophysics Data System (ADS)

Ferragut, R.; Dupaquier, A.; Brivio, S.; Bertacco, R.; Egger, W.

2011-09-01

Defects in an ultrathin Au/La2/3Sr1/3MnO3/SrTiO3 (Au/LSMO/STO) heterostructure displaying electroresistive behavior were studied using variable energy positron annihilation spectroscopy. Vacancy-like defects were found to be the dominant positron traps in the LSMO and STO thin perovskite oxides with a number density >1017 cm-3 and 2 × 1017 cm-3 in the STO substrate. High defect density was revealed by strong positron trapping at the Au/LSMO interface. Oxygen deficiency in LSMO would be the main source of these traps. Besides, a low density of sub-nano voids of ˜6 Å was found in the substrate and in the thin LSMO/STO films.

Minimally complex ion traps as modules for quantum communication and computing

NASA Astrophysics Data System (ADS)

Nigmatullin, Ramil; Ballance, Christopher J.; de Beaudrap, Niel; Benjamin, Simon C.

2016-10-01

Optically linked ion traps are promising as components of network-based quantum technologies, including communication systems and modular computers. Experimental results achieved to date indicate that the fidelity of operations within each ion trap module will be far higher than the fidelity of operations involving the links; fortunately internal storage and processing can effectively upgrade the links through the process of purification. Here we perform the most detailed analysis to date on this purification task, using a protocol which is balanced to maximise fidelity while minimising the device complexity and the time cost of the process. Moreover we ‘compile down’ the quantum circuit to device-level operations including cooling and shuttling events. We find that a linear trap with only five ions (two of one species, three of another) can support our protocol while incorporating desirable features such as global control, i.e. laser control pulses need only target an entire zone rather than differentiating one ion from its neighbour. To evaluate the capabilities of such a module we consider its use both as a universal communications node for quantum key distribution, and as the basic repeating unit of a quantum computer. For the latter case we evaluate the threshold for fault tolerant quantum computing using the surface code, finding acceptable fidelities for the ‘raw’ entangling link as low as 83% (or under 75% if an additional ion is available).

Vacuum-induced coherence in quantum dot systems

NASA Astrophysics Data System (ADS)

Sitek, Anna; Machnikowski, Paweł

2012-11-01

We present a theoretical study of vacuum-induced coherence in a pair of vertically stacked semiconductor quantum dots. The process consists in a coherent excitation transfer from a single-exciton state localized in one dot to a delocalized state in which the exciton occupation gets trapped. We study the influence of the factors characteristic of quantum dot systems (as opposed to natural atoms): energy mismatch, coupling between the single-exciton states localized in different dots, and different and nonparallel dipoles due to sub-band mixing, as well as coupling to phonons. We show that the destructive effect of the energy mismatch can be overcome by an appropriate interplay of the dipole moments and coupling between the dots which allows one to observe the trapping effect even in a structure with technologically realistic energy splitting of the order of milli-electron volts. We also analyze the impact of phonon dynamics on the occupation trapping and show that phonon effects are suppressed in a certain range of system parameters. This analysis shows that the vacuum-induced coherence effect and the associated long-living trapped excitonic population can be achieved in quantum dots.

Photon-photon entanglement with a single trapped atom.

PubMed

Weber, B; Specht, H P; Müller, T; Bochmann, J; Mücke, M; Moehring, D L; Rempe, G

2009-01-23

An experiment is performed where a single rubidium atom trapped within a high-finesse optical cavity emits two independently triggered entangled photons. The entanglement is mediated by the atom and is characterized both by a Bell inequality violation of S=2.5, as well as full quantum-state tomography, resulting in a fidelity exceeding F=90%. The combination of cavity-QED and trapped atom techniques makes our protocol inherently deterministic--an essential step for the generation of scalable entanglement between the nodes of a distributed quantum network.

Tunable two-dimensional arrays of single Rydberg atoms for realizing quantum Ising models

NASA Astrophysics Data System (ADS)

Labuhn, Henning; Barredo, Daniel; Ravets, Sylvain; de Léséleuc, Sylvain; Macrì, Tommaso; Lahaye, Thierry; Browaeys, Antoine

2016-06-01

Spin models are the prime example of simplified many-body Hamiltonians used to model complex, strongly correlated real-world materials. However, despite the simplified character of such models, their dynamics often cannot be simulated exactly on classical computers when the number of particles exceeds a few tens. For this reason, quantum simulation of spin Hamiltonians using the tools of atomic and molecular physics has become a very active field over the past years, using ultracold atoms or molecules in optical lattices, or trapped ions. All of these approaches have their own strengths and limitations. Here we report an alternative platform for the study of spin systems, using individual atoms trapped in tunable two-dimensional arrays of optical microtraps with arbitrary geometries, where filling fractions range from 60 to 100 per cent. When excited to high-energy Rydberg D states, the atoms undergo strong interactions whose anisotropic character opens the way to simulating exotic matter. We illustrate the versatility of our system by studying the dynamics of a quantum Ising-like spin-1/2 system in a transverse field with up to 30 spins, for a variety of geometries in one and two dimensions, and for a wide range of interaction strengths. For geometries where the anisotropy is expected to have small effects on the dynamics, we find excellent agreement with ab initio simulations of the spin-1/2 system, while for strongly anisotropic situations the multilevel structure of the D states has a measurable influence. Our findings establish arrays of single Rydberg atoms as a versatile platform for the study of quantum magnetism.

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

PubMed Central

2017-01-01

We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport. PMID:28084725

Virial Coefficients from Unified Statistical Thermodynamics of Quantum Gases Trapped under Generic Power Law Potential in d Dimension and Equivalence of Quantum Gases

NASA Astrophysics Data System (ADS)

Bahauddin, Shah Mohammad; Mehedi Faruk, Mir

2016-09-01

From the unified statistical thermodynamics of quantum gases, the virial coefficients of ideal Bose and Fermi gases, trapped under generic power law potential are derived systematically. From the general result of virial coefficients, one can produce the known results in d = 3 and d = 2. But more importantly we found that, the virial coefficients of Bose and Fermi gases become identical (except the second virial coefficient, where the sign is different) when the gases are trapped under harmonic potential in d = 1. This result suggests the equivalence between Bose and Fermi gases established in d = 1 (J. Stat. Phys. DOI 10.1007/s10955-015-1344-4). Also, it is found that the virial coefficients of two-dimensional free Bose (Fermi) gas are equal to the virial coefficients of one-dimensional harmonically trapped Bose (Fermi) gas.

Left-right correlation in coupled F-center defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janesko, Benjamin G., E-mail: b.janesko@tcu.edu

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of “strong” left-right correlation, symptoms similar to those seen in stretched H{sub 2}. Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centersmore » may fail for adjacent F-centers.« less

Distillation of bose-einstein condensates in a double-well potential.

PubMed

Shin, Y; Saba, M; Schirotzek, A; Pasquini, T A; Leanhardt, A E; Pritchard, D E; Ketterle, W

2004-04-16

Bose-Einstein condensates of sodium atoms, prepared in an optical dipole trap, were distilled into a second empty dipole trap adjacent to the first one. The distillation was driven by thermal atoms spilling over the potential barrier separating the two wells and then forming a new condensate. This process serves as a model system for metastability in condensates, provides a test for quantum kinetic theories of condensate formation, and also represents a novel technique for creating or replenishing condensates in new locations.

Intrinsic white-light emission from layered hybrid perovskites.

PubMed

Dohner, Emma R; Jaffe, Adam; Bradshaw, Liam R; Karunadasa, Hemamala I

2014-09-24

We report on the second family of layered perovskite white-light emitters with improved photoluminescence quantum efficiencies (PLQEs). Upon near-ultraviolet excitation, two new Pb-Cl and Pb-Br perovskites emit broadband "cold" and "warm" white light, respectively, with high color rendition. Emission from large, single crystals indicates an origin from the bulk material and not surface defect sites. The Pb-Br perovskite has a PLQE of 9%, which is undiminished after 3 months of continuous irradiation. Our mechanistic studies indicate that the emission has contributions from strong electron-phonon coupling in a deformable lattice and from a distribution of intrinsic trap states. These hybrids provide a tunable platform for combining the facile processability of organic materials with the structural definition of crystalline, inorganic solids.

Non-local propagation of correlations in long-range interacting quantum systems

NASA Astrophysics Data System (ADS)

Lee, A. C.; Richerme, P.; Gong, Z.-X.; Senko, C.; Smith, J.; Foss-Feig, M.; Michalakis, S.; Gorshkov, A. V.; Monroe, C.

2014-05-01

The maximum speed with which information can propagate in a many body quantum system can dictate how demanding the system is to describe numerically and also how quickly disparate sites can become correlated. While these kinds of phenomena may be difficult or even impossible for classical computers to describe, trapped ions provide an excellent platform for investigating this rich quantum many-body physics. Using single-site resolved state-dependent imaging, we experimentally determine the spatial and time-dependent correlations of a far-from-equilibrium quantum many-body system evolving under a long-range Ising- or XY-model Hamiltonian. For varying interaction ranges, we extract the shape of the ``light'' cone and measure the velocity with which correlations propagate through the system. In many cases, we find increasing propagation velocities, which violate the prediction for short-range interactions and, in one instance, cannot be explained by any existing theory. Our results show that even for modest system sizes, trapped ion quantum simulators are well poised to study complex many-body physics which are intractable to classical methods. This work is supported by grants from the U.S. Army Research Office with funding from the DARPA OLE program, IARPA, and the MURI program; and the NSF Physics Frontier Center at JQI.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Coherence Preservation of a Single Neutral Atom Qubit Transferred between Magic-Intensity Optical Traps.

PubMed

Yang, Jiaheng; He, Xiaodong; Guo, Ruijun; Xu, Peng; Wang, Kunpeng; Sheng, Cheng; Liu, Min; Wang, Jin; Derevianko, Andrei; Zhan, Mingsheng

2016-09-16

We demonstrate that the coherence of a single mobile atomic qubit can be well preserved during a transfer process among different optical dipole traps (ODTs). This is a prerequisite step in realizing a large-scale neutral atom quantum information processing platform. A qubit encoded in the hyperfine manifold of an ^{87}Rb atom is dynamically extracted from the static quantum register by an auxiliary moving ODT and reinserted into the static ODT. Previous experiments were limited by decoherences induced by the differential light shifts of qubit states. Here, we apply a magic-intensity trapping technique which mitigates the detrimental effects of light shifts and substantially enhances the coherence time to 225±21  ms. The experimentally demonstrated magic trapping technique relies on the previously neglected hyperpolarizability contribution to the light shifts, which makes the light shift dependence on the trapping laser intensity parabolic. Because of the parabolic dependence, at a certain "magic" intensity, the first order sensitivity to trapping light-intensity variations over ODT volume is eliminated. We experimentally demonstrate the utility of this approach and measure hyperpolarizability for the first time. Our results pave the way for constructing scalable quantum-computing architectures with single atoms trapped in an array of magic ODTs.

Detection of quantum well induced single degenerate-transition-dipoles in ZnO nanorods.

PubMed

Ghosh, Siddharth; Ghosh, Moumita; Seibt, Michael; Rao, G Mohan

2016-02-07

Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission patterns from optical imaging with a multi-dimensional dipole and find that the experimentally observed dipole pattern and model-calculated patterns are in excellent agreement. This agreement suggests the presence of vertically oriented degenerate-transition-dipoles in vertically aligned ZnO nanorods. The HRTEM of the ZnO nanorod shows the presence of a stacking fault, which generates a localised quantum well induced degenerate-transition-dipole. Finally, we elucidate that defocused wide-field imaging can be widely used to characterise defects in nanomaterials to answer many difficult questions concerning the performance of low-dimensional devices, such as in energy harvesting, advanced metal-oxide-semiconductor storage, and nanoelectromechanical and nanophotonic devices.

Performance of a multilevel quantum heat engine of an ideal N-particle Fermi system.

PubMed

Wang, Rui; Wang, Jianhui; He, Jizhou; Ma, Yongli

2012-08-01

We generalize the quantum heat engine (QHE) model which was first proposed by Bender et al. [J. Phys. A 33, 4427 (2000)] to the case in which an ideal Fermi gas with an arbitrary number N of particles in a box trap is used as the working substance. Besides two quantum adiabatic processes, the engine model contains two isoenergetic processes, during which the particles are coupled to energy baths at a high constant energy E(h) and a low constant energy E(c), respectively. Directly employing the finite-time thermodynamics, we find that the power output is enhanced by increasing particle number N (or decreasing minimum trap size L(A)) for given L(A) (or N), without reduction in the efficiency. By use of global optimization, the efficiency at possible maximum power output (EPMP) is found to be universal and independent of any parameter contained in the engine model. For an engine model with any particle-number N, the efficiency at maximum power output (EMP) can be determined under the condition that it should be closest to the EPMP. Moreover, we extend the heat engine to a more general multilevel engine model with an arbitrary 1D power-law potential. Comparison between our engine model and the Carnot cycle shows that, under the same conditions, the efficiency η = 1 - E(c)/E(h) of the engine cycle is bounded from above the Carnot value η(c) =1 - T(c)/T(h).

Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

NASA Astrophysics Data System (ADS)

Thibert, Arthur Joseph, III

Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh laboratory (UCD). The measured signals were decomposed into the constituent dynamics of three transient populations: hot tightly bound excitons, relaxed tightly bound excitons, and separated trapped carriers (holes and electrons). The influenes of three external factors affecting the observed dynamics were explored: (1) excitation wavelength, (2) excitation fluence, and (3) presence of the hole scavenger HS -. Both higher-energy excitation photons and higher-intensity excitation induce slower relaxation of charge carriers to the band edge due to the need to dissipate excess excitation energy. Nonlinear decay kinetics of the relaxed exciton population is observed and demonstrated to arise from bimolecular trapping of excitons with low-density trap sites located at CdSe NR surface sites instead of the commonly resolved multiparticle Auger recombination mechanism. This is supported by the observed linear excitation-fluence dependence of the trapped-carrier population that is n umerically simulated and found to deviate from the excitation fluence dependence expected of Auger recombination kinetics. Introducing hole scavenging HS- has a negligible effect on the exciton kinetics, including migration and dissociation, and instead passivates surface trap states to induce the rapid elimination of holes after exciton dissociation. This increases the lifetime of the reactive electron population and increases measured photocatalytic H2 generation activity. A broad (200 nm) and persistent (20 ps) stimulated emission observed in the tightly bound excitons suggests their potential use as broadband microlasers. In chapter 3 (JPCL, 2688, 2011), the photocatalytic H2O splitting activities of CdSe and CdSe/CdS core/shell quantum dots, which were also synthesized in the Osterloh laboratory (UCD) are contrasted. CdSe/CdS core/shell quantum dots constructed from 4.0 nm CdSe quantum dots are shown to be strongly active for visible-light-driven photocatalytic H2 evolution in 0.1M Na 2S/Na2SO3 solution with a turnover number of 9.94 after 5 h at 103.9 μmol/h. CdSe quantum dots themselves are only marginally active in 0.1 M Na2S/Na2SO3 solution with a turnover number of 1.10 after 5 h at 11.53 μmol/h, while CdSe quantum dots in pure H2O are found to be completely inactive. Broad-band transient absorption spectroscopy is used to elucidate the mechanisms that facilitate the enhancement in the CdSe core/shell quantum dots, which is attributed to passivation of surface-deep trap states with energies lying below the reduction potential necessary for H2O reduction. Thus, it is shown that surface trapping dynamics and energetics can be manipulated to dictate the photocatalytic activities of novel CdSe quantum dot based photocatalytic materials. Chapter 4 builds upon this work examining the differences in dynamics that occur upon passivation of water soluble CdZnS alloy cores with ZnS shells, which were produced in the Snee laboratory (UI Chicago), via 400 nm pump broadband probe ultrafast transient absorption spectroscopy, and global analysis modeling. We also examine the perturbation invoked on charge carrier dynamics caused by growing Pd nanoparticles on the CdZnS/ZnS shell surface in-situ and note the cyclical charge carrier transfer that takes place. Both the CdZnS core and CdZnS/ZnS core/shell quantum dots exhibit unusually long lived excited states (much > 8 ns) while the CdZnS/ZnS.Pd tandem core/shell quantum dots recover much quicker (~3 ns). Additionally, ultrafast excitation fluence dependencies are used to characterize Auger recombination and the presence of two different trap state populations observable in the visible spectrum. In chapter 5 (JACS, 20664, 2011), we switch from examining direct band-gap chalcogenide based quantum dots to Si quantum dots synthesized in the Kauzlarich laboratory (UCD), which exhibit an indirect band-gap. Here a microwave-assisted reaction to produce hydrogen-terminated silicon quantum dots is discussed. The Si quantum dots were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si quantum dots, and a modified Stöber process produced silica-encapsulated Si quantum dots. Both methods produce water-soluble quantum dots with maximum emission at 414 nm, and after purification, the quantum dots exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the quantum dots have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the quantum dots and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si quantum dots is interpreted as a formation and decay of a charge-transfer excited state between the delocalized π electrons of the carbon linker and the Si core excitons. This charge transfer state is stable for ~4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without charge transfer dynamics. Appendix I (Chem. Mat., 1220, 2010), addresses the long-time (μs) transient kinetics associated with TiO2 and layered titanates (TBA2 2Ti4O9), which were synthesized in the Osterloh laboratory (UCD). Transient absorption data reveal that photogenerated electrons become trapped in mid band-gap states, from which they decay exponentially with a time-constant of 43.67 + 0.28 ms in titanates, which is much slower than the 68 + 1 ns observed for TiO2 nanocrystals. The slower kinetics observed for the TBA 2Ti4O9 nanosheets originates either from the presence of deeper trap sites on the sheets vs. the nanoparticles, more trap sites, or from more effective electron-hole separation because of the micrometer dimensions of the 2D lattice. Appendix II, depicts the visible solar spectrum at sea level detailing the percentage of photons and energy that exist within certain wavelength ranges.

Total Dose Hardness Assurance. Volume I. Identification of Techniques.

DTIC Science & Technology

1980-02-01

nonuniformities suggests that this modelss is not valid or at least does not explain the majority of mid-gap states. 29 4. UNIFIED MODEL OF SVENSSON...studies by H. L. Hughes and King (ref. 37) indicate that the surface defects give rise to radiation induced lateral nonuniform - ities (LNU’s) in the trapped...observed charac- teristics used to measure N are actually due to N or a result of 56 lateral nonuniformities (LNU) of trapped charge in the oxide

Construction of a single atom trap for quantum information protocols

NASA Astrophysics Data System (ADS)

Shea, Margaret E.; Baker, Paul M.; Gauthier, Daniel J.; Duke Physics Department Team

2016-05-01

The field of quantum information science addresses outstanding problems such as achieving fundamentally secure communication and solving computationally hard problems. Great progress has been made in the field, particularly using photons coupled to ions and super conducting qubits. Neutral atoms are also interesting for these applications and though the technology for control of neutrals lags behind that of trapped ions, they offer some key advantages: primarily coupling to optical frequencies closer to the telecom band than trapped ions or superconducting qubits. Here we report progress on constructing a single atom trap for 87 Rb. This system is a promising platform for studying the technical problems facing neutral atom quantum computing. For example, most protocols destroy the trap when reading out the neutral atom's state; we will investigate an alternative non-destructive state detection scheme. We detail the experimental systems involved and the challenges addressed in trapping a single atom. All of our hardware components are off the shelf and relatively inexpensive. Unlike many other systems, we place a high numerical aperture lens inside our vacuum system to increase photon collection efficiency. We gratefully acknowledge the financial support of the ARO through Grant # W911NF1520047.

Quantum Corrections to the 'Atomistic' MOSFET Simulations

NASA Technical Reports Server (NTRS)

Asenov, Asen; Slavcheva, G.; Kaya, S.; Balasubramaniam, R.

2000-01-01

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Defects in Quantum Computers

DOE PAGES

Gardas, Bartłomiej; Dziarmaga, Jacek; Zurek, Wojciech H.; ...

2018-03-14

The shift of interest from general purpose quantum computers to adiabatic quantum computing or quantum annealing calls for a broadly applicable and easy to implement test to assess how quantum or adiabatic is a specific hardware. Here we propose such a test based on an exactly solvable many body system–the quantum Ising chain in transverse field–and implement it on the D-Wave machine. An ideal adiabatic quench of the quantum Ising chain should lead to an ordered broken symmetry ground state with all spins aligned in the same direction. An actual quench can be imperfect due to decoherence, noise, flaws inmore » the implemented Hamiltonian, or simply too fast to be adiabatic. Imperfections result in topological defects: Spins change orientation, kinks punctuating ordered sections of the chain. Therefore, the number of such defects quantifies the extent by which the quantum computer misses the ground state, and is imperfect.« less

Defects in Quantum Computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gardas, Bartłomiej; Dziarmaga, Jacek; Zurek, Wojciech H.

The shift of interest from general purpose quantum computers to adiabatic quantum computing or quantum annealing calls for a broadly applicable and easy to implement test to assess how quantum or adiabatic is a specific hardware. Here we propose such a test based on an exactly solvable many body system–the quantum Ising chain in transverse field–and implement it on the D-Wave machine. An ideal adiabatic quench of the quantum Ising chain should lead to an ordered broken symmetry ground state with all spins aligned in the same direction. An actual quench can be imperfect due to decoherence, noise, flaws inmore » the implemented Hamiltonian, or simply too fast to be adiabatic. Imperfections result in topological defects: Spins change orientation, kinks punctuating ordered sections of the chain. Therefore, the number of such defects quantifies the extent by which the quantum computer misses the ground state, and is imperfect.« less

Interaction-induced decay of a heteronuclear two-atom system

PubMed Central

Xu, Peng; Yang, Jiaheng; Liu, Min; He, Xiaodong; Zeng, Yong; Wang, Kunpeng; Wang, Jin; Papoular, D. J.; Shlyapnikov, G. V.; Zhan, Mingsheng

2015-01-01

Two-atom systems in small traps are of fundamental interest for understanding the role of interactions in degenerate cold gases and for the creation of quantum gates in quantum information processing with single-atom traps. One of the key quantities is the inelastic relaxation (decay) time when one of the atoms or both are in a higher hyperfine state. Here we measure this quantity in a heteronuclear system of 87Rb and 85Rb in a micro optical trap and demonstrate experimentally and theoretically the presence of both fast and slow relaxation processes, depending on the choice of the initial hyperfine states. This experimental method allows us to single out a particular relaxation process thus provides an extremely clean platform for collisional physics studies. Our results have also implications for engineering of quantum states via controlled collisions and creation of two-qubit quantum gates. PMID:26199051

Towards a Quantum Interface between Diamond Spin Qubits and Phonons in an Optical Trap

NASA Astrophysics Data System (ADS)

Ji, Peng; Momeen, M. Ummal; Hsu, Jen-Feng; D'Urso, Brian; Dutt, Gurudev

2014-05-01

We introduce a method to optically levitate a pre-selected nanodiamond crystal in air or vacuum. The nanodiamond containing nitrogen-vacancy (NV) centers is suspended on a monolayer of graphene transferred onto a patterned substrate. Laser light is focused onto the sample, using a home-built confocal microscope with a high numerical aperture (NA = 0.9) objective, simultaneously burning the graphene and creating a 3D optical trap that captures the falling nano-diamond at the beam waist. The trapped diamond is an ultra-high-Q mechanical oscillator, allowing us to engineer strong linear and quadratic coupling between the spin of the NV center and the phonon mode. The system could result in an ideal quantum interface between a spin qubit and vibrational phonon mode, potentially enabling applications in quantum information processing and sensing the development of quantum information storage and processing.

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

NASA Technical Reports Server (NTRS)

Li, S. B.; Choi, C. G.; Loo, R. Y.

1985-01-01

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Experiments with trapped ions and ultrafast laser pulses

NASA Astrophysics Data System (ADS)

Johnson, Kale Gifford

Since the dawn of quantum information science, laser-cooled trapped atomic ions have been one of the most compelling systems for the physical realization of a quantum computer. By applying qubit state dependent forces to the ions, their collective motional modes can be used as a bus to realize entangling quantum gates. Ultrafast state-dependent kicks [1] can provide a universal set of quantum logic operations, in conjunction with ultrafast single qubit rotations [2], which uses only ultrafast laser pulses. This may present a clearer route to scaling a trapped ion processor [3]. In addition to the role that spin-dependent kicks (SDKs) play in quantum computation, their utility in fundamental quantum mechanics research is also apparent. In this thesis, we present a set of experiments which demonstrate some of the principle properties of SDKs including ion motion independence (we demonstrate single ion thermometry from the ground state to near room temperature and the largest Schrodinger cat state ever created in an oscillator), high speed operations (compared with conventional atom-laser interactions), and multi-qubit entanglement operations with speed that is not fundamentally limited by the trap oscillation frequency. We also present a method to provide higher stability in the radial mode ion oscillation frequencies of a linear radiofrequency (rf) Paul trap-a crucial factor when performing operations on the rf-sensitive modes. Finally, we present the highest atomic position sensitivity measurement of an isolated atom to date of 0.5 nm Hz. (-1/2) with a minimum uncertaintyof 1.7 nm using a 0.6 numerical aperature (NA) lens system, along with a method to correct aberrations and a direct position measurement of ion micromotion (the inherent oscillations of an ion trapped in an oscillating rf field). This development could be used to directly image atom motion in the quantum regime, along with sensing forces at the yoctonewton [10. (-24) N)] scale forgravity sensing, and 3D imaging of atoms from static to higher frequency motion. These ultrafast atomic qubit manipulation tools demonstrate inherent advantages over conventional techniques, offering a fundamentally distinct regime of control and speed not previously achievable.

Emergence and Frustration of Magnetism with Variable-Range Interactions in a Quantum Simulator

DTIC Science & Technology

2013-05-03

quantum entanglement . Here, we engineer frustrated antiferromagnetic interactions between spins stored in a crystal of up to 16 trapped 171Yb+ atoms. We...individual trapped ion spins (10–14) and the observation of spin frus- tration and quantum entanglement in the smallest system of three spins (15). Here...monroe@umd.edu www.sciencemag.org SCIENCE VOL 340 3 MAY 2013 583 and the excitation gap (Fig. 1A) closes, leading to a finite entropy density in the

Characterization of oxygen defects in diamond by means of density functional theory calculations

NASA Astrophysics Data System (ADS)

Thiering, Gergő; Gali, Adam

2016-09-01

Point defects in diamond are of high interest as candidates for realizing solid state quantum bits, bioimaging agents, or ultrasensitive electric or magnetic field sensors. Various artificial diamond synthesis methods should introduce oxygen contamination in diamond, however, the incorporation of oxygen into diamond crystal and the nature of oxygen-related point defects are largely unknown. Oxygen may be potentially interesting as a source of quantum bits or it may interact with other point defects which are well established solid state qubits. Here we employ plane-wave supercell calculations within density functional theory, in order to characterize the electronic and magneto-optical properties of various oxygen-related defects. Besides the trivial single interstitial and substitutional oxygen defects we also consider their complexes with vacancies and hydrogen atoms. We find that oxygen defects are mostly electrically active and introduce highly correlated orbitals that pose a challenge for density functional theory modeling. Nevertheless, we are able to identify the fingerprints of substitutional oxygen defect, the oxygen-vacancy and oxygen-vacancy-hydrogen complexes in the electron paramagnetic resonance spectrum. We demonstrate that first principles calculations can predict the motional averaging of the electron paramagnetic resonance spectrum of defects that are subject to Jahn-Teller distortion. We show that the high-spin neutral oxygen-vacancy defect exhibits very fast nonradiative decay from its optical excited state that might hinder applying it as a qubit.

Quantum speed limit for arbitrary initial states

PubMed Central

Zhang, Ying-Jie; Han, Wei; Xia, Yun-Jie; Cao, Jun-Peng; Fan, Heng

2014-01-01

The minimal time a system needs to evolve from an initial state to its one orthogonal state is defined as the quantum speed limit time, which can be used to characterize the maximal speed of evolution of a quantum system. This is a fundamental question of quantum physics. We investigate the generic bound on the minimal evolution time of the open dynamical quantum system. This quantum speed limit time is applicable to both mixed and pure initial states. We then apply this result to the damped Jaynes-Cummings model and the Ohimc-like dephasing model starting from a general time-evolution state. The bound of this time-dependent state at any point in time can be found. For the damped Jaynes-Cummings model, when the system starts from the excited state, the corresponding bound first decreases and then increases in the Markovian dynamics. While in the non-Markovian regime, the speed limit time shows an interesting periodic oscillatory behavior. For the case of Ohimc-like dephasing model, this bound would be gradually trapped to a fixed value. In addition, the roles of the relativistic effects on the speed limit time for the observer in non-inertial frames are discussed. PMID:24809395

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

PubMed Central

Hong, Seokjun; Lee, Minjae; Kwon, Yeong-Dae; Cho, Dong-il "Dan"; Kim, Taehyun

2017-01-01

Ions trapped in a quadrupole Paul trap have been considered one of the strong physical candidates to implement quantum information processing. This is due to their long coherence time and their capability to manipulate and detect individual quantum bits (qubits). In more recent years, microfabricated surface ion traps have received more attention for large-scale integrated qubit platforms. This paper presents a microfabrication methodology for ion traps using micro-electro-mechanical system (MEMS) technology, including the fabrication method for a 14 µm-thick dielectric layer and metal overhang structures atop the dielectric layer. In addition, an experimental procedure for trapping ytterbium (Yb) ions of isotope 174 (174Yb+) using 369.5 nm, 399 nm, and 935 nm diode lasers is described. These methodologies and procedures involve many scientific and engineering disciplines, and this paper first presents the detailed experimental procedures. The methods discussed in this paper can easily be extended to the trapping of Yb ions of isotope 171 (171Yb+) and to the manipulation of qubits. PMID:28872137

Ground and excited states of the Rydberg radical H3O: Electron propagator and quantum defect analysis

NASA Astrophysics Data System (ADS)

Melin, Junia; Ortiz, J. V.; Martín, I.; Velasco, A. M.; Lavín, C.

2005-06-01

Vertical excitation energies of the Rydberg radical H3O are inferred from ab initio electron propagator calculations on the electron affinities of H3O+. The adiabatic ionization energy of H3O is evaluated with coupled-cluster calculations. These predictions provide optimal parameters for the molecular-adapted quantum defect orbital method, which is used to determine oscillator strengths. Given that the experimental spectrum of H3O does not seem to be available, comparisons with previous calculations are discussed. A simple model Hamiltonian, suitable for the study of bound states with arbitrarily high energies is generated by these means.

Loop quantum gravity simplicity constraint as surface defect in complex Chern-Simons theory

NASA Astrophysics Data System (ADS)

Han, Muxin; Huang, Zichang

2017-05-01

The simplicity constraint is studied in the context of four-dimensional spinfoam models with a cosmological constant. We find that the quantum simplicity constraint is realized as the two-dimensional surface defect in SL (2 ,C ) Chern-Simons theory in the construction of spinfoam amplitudes. By this realization of the simplicity constraint in Chern-Simons theory, we are able to construct the new spinfoam amplitude with a cosmological constant for an arbitrary simplicial complex (with many 4-simplices). The semiclassical asymptotics of the amplitude is shown to correctly reproduce the four-dimensional Einstein-Regge action with a cosmological constant term.

Dissipative production of a maximally entangled steady state of two quantum bits.

PubMed

Lin, Y; Gaebler, J P; Reiter, F; Tan, T R; Bowler, R; Sørensen, A S; Leibfried, D; Wineland, D J

2013-12-19

Entangled states are a key resource in fundamental quantum physics, quantum cryptography and quantum computation. Introduction of controlled unitary processes--quantum gates--to a quantum system has so far been the most widely used method to create entanglement deterministically. These processes require high-fidelity state preparation and minimization of the decoherence that inevitably arises from coupling between the system and the environment, and imperfect control of the system parameters. Here we combine unitary processes with engineered dissipation to deterministically produce and stabilize an approximate Bell state of two trapped-ion quantum bits (qubits), independent of their initial states. Compared with previous studies that involved dissipative entanglement of atomic ensembles or the application of sequences of multiple time-dependent gates to trapped ions, we implement our combined process using trapped-ion qubits in a continuous time-independent fashion (analogous to optical pumping of atomic states). By continuously driving the system towards the steady state, entanglement is stabilized even in the presence of experimental noise and decoherence. Our demonstration of an entangled steady state of two qubits represents a step towards dissipative state engineering, dissipative quantum computation and dissipative phase transitions. Following this approach, engineered coupling to the environment may be applied to a broad range of experimental systems to achieve desired quantum dynamics or steady states. Indeed, concurrently with this work, an entangled steady state of two superconducting qubits was demonstrated using dissipation.

Ion-photon entanglement and quantum frequency conversion with trapped Ba⁺ ions.

PubMed

Siverns, J D; Li, X; Quraishi, Q

2017-01-20

Trapped ions are excellent candidates for quantum nodes, as they possess many desirable features of a network node including long lifetimes, on-site processing capability, and production of photonic flying qubits. However, unlike classical networks in which data may be transmitted in optical fibers and where the range of communication is readily extended with amplifiers, quantum systems often emit photons that have a limited propagation range in optical fibers and, by virtue of the nature of a quantum state, cannot be noiselessly amplified. Here, we first describe a method to extract flying qubits from a Ba⁺ trapped ion via shelving to a long-lived, low-lying D-state with higher entanglement probabilities compared with current strong and weak excitation methods. We show a projected fidelity of ≈89% of the ion-photon entanglement. We compare several methods of ion-photon entanglement generation, and we show how the fidelity and entanglement probability varies as a function of the photon collection optic's numerical aperture. We then outline an approach for quantum frequency conversion of the photons emitted by the Ba⁺ ion to the telecommunication range for long-distance networking and to 780 nm for potential entanglement with rubidium-based quantum memories. Our approach is significant for extending the range of quantum networks and for the development of hybrid quantum networks compromised of different types of quantum memories.

Semiconductor quantum dot super-emitters: spontaneous emission enhancement combined with suppression of defect environment using metal-oxide plasmonic metafilms

NASA Astrophysics Data System (ADS)

Sadeghi, Seyed M.; Wing, Waylin J.; Gutha, Rithvik R.; Sharp, Christina

2018-01-01

We demonstrate that a metal-oxide plasmonic metafilm consisting of a Si/Al oxide junction in the vicinity of a thin gold layer can quarantine excitons in colloidal semiconductor quantum dots against their defect environments. This process happens while the plasmon fields of the gold layer enhance spontaneous emission decay rates of the quantum dots. We study the emission dynamics of such quantum dots when the distance between the Si/Al oxide junction and the gold thin layer is varied. The results show that for distances less than a critical value the lifetime of the quantum dots can be elongated while they experience intense plasmon fields. This suggests that the metal-oxide metafilm can keep photo-excited electrons in the cores of the quantum dots, suppressing their migration to the surface defect sites. This leads to suppression of Auger recombination, offering quantum dot super-emitters with emission that is enhanced not only by the plasmon fields (Purcell effect), but also by strong suppression of the non-radiative decay caused by the defect sites.

Conditions for order and chaos in the dynamics of a trapped Bose-Einstein condensate in coordinate and energy space

NASA Astrophysics Data System (ADS)

Sakhel, Roger R.; Sakhel, Asaad R.; Ghassib, Humam B.; Balaz, Antun

2016-03-01

We investigate numerically conditions for order and chaos in the dynamics of an interacting Bose-Einstein condensate (BEC) confined by an external trap cut off by a hard-wall box potential. The BEC is stirred by a laser to induce excitations manifesting as irregular spatial and energy oscillations of the trapped cloud. Adding laser stirring to the external trap results in an effective time-varying trapping frequency in connection with the dynamically changing combined external+laser potential trap. The resulting dynamics are analyzed by plotting their trajectories in coordinate phase space and in energy space. The Lyapunov exponents are computed to confirm the existence of chaos in the latter space. Quantum effects and trap anharmonicity are demonstrated to generate chaos in energy space, thus confirming its presence and implicating either quantum effects or trap anharmonicity as its generator. The presence of chaos in energy space does not necessarily translate into chaos in coordinate space. In general, a dynamic trapping frequency is found to promote chaos in a trapped BEC. An apparent means to suppress chaos in a trapped BEC is achieved by increasing the characteristic scale of the external trap with respect to the condensate size.

Deterministic quantum teleportation of atomic qubits.

PubMed

Barrett, M D; Chiaverini, J; Schaetz, T; Britton, J; Itano, W M; Jost, J D; Knill, E; Langer, C; Leibfried, D; Ozeri, R; Wineland, D J

2004-06-17

Quantum teleportation provides a means to transport quantum information efficiently from one location to another, without the physical transfer of the associated quantum-information carrier. This is achieved by using the non-local correlations of previously distributed, entangled quantum bits (qubits). Teleportation is expected to play an integral role in quantum communication and quantum computation. Previous experimental demonstrations have been implemented with optical systems that used both discrete and continuous variables, and with liquid-state nuclear magnetic resonance. Here we report unconditional teleportation of massive particle qubits using atomic (9Be+) ions confined in a segmented ion trap, which aids individual qubit addressing. We achieve an average fidelity of 78 per cent, which exceeds the fidelity of any protocol that does not use entanglement. This demonstration is also important because it incorporates most of the techniques necessary for scalable quantum information processing in an ion-trap system.

The thermally stimulated discharge of ion-irradiated oxide films

NASA Astrophysics Data System (ADS)

Wang, Qiuru; Zeng, Huizhong; Zhang, Wanli

2018-01-01

The ion irradiation technique is utilized to modify the surface structure of amorphous insulating oxide films. While introducing defects, a number of surface charges are injected into the films and captured in the traps during ion irradiation. The variation of surface morphology and the enhancement of emission spectrum corresponding to vacancy defects are respectively verified by atomic force microscopy and photoluminescence measurements. The surface charges trapped in the shallow traps are easy to release caused by thermal excitation, and discharge is observed during heating. Based on the thermally stimulated discharge measurements, the trap parameters of oxide films, such as activation energy and relaxation time, are calculated from experimental data.

Cadmium sulfide quantum dots supported on gallium and indium oxide for visible-light-driven hydrogen evolution from water.

PubMed

Pan, Yun-xiang; Zhuang, Huaqiang; Hong, Jindui; Fang, Zheng; Liu, Hai; Liu, Bin; Huang, Yizhong; Xu, Rong

2014-09-01

In this work, CdS quantum dots (QDs) supported on Ga2O3 and In2O3 are applied for visible-light-driven H2 evolution from aqueous solutions that contain lactic acid. With Pt as the cocatalyst, the H2 evolution rates on CdS/Pt/Ga2O3 and CdS/Pt/In2O3 are as high as 995.8 and 1032.2 μmol h(-1), respectively, under visible light (λ>420 nm) with apparent quantum efficiencies of 43.6 and 45.3% obtained at 460 nm, respectively. These are much higher than those on Pt/CdS (108.09 μmol h(-1)), Pt/Ga2O3 (0.12 μmol h(-1)), and Pt/In2O3 (0.05 μmol h(-1)). The photocatalysts have been characterized thoroughly and their band structures and photocurrent responses have been measured. The band alignment between the CdS QDs and In2O3 can lead to interfacial charge separation, which cannot occur between the CdS QDs and Ga2O3. Among the various possible factors that contribute to the high H2 evolution rates on CdS/Pt/oxide, the surface properties of the metal oxides play important roles, which include (i) the anchoring of CdS QDs and Pt nanoparticles for favorable interactions and (ii) the efficient trapping of photogenerated electrons from the CdS QDs because of surface defects (such as oxygen defects) based on photoluminescence and photocurrent studies. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A comparison of point defects in Cd1-xZnxTe1-ySey crystals grown by Bridgman and traveling heater methods

NASA Astrophysics Data System (ADS)

Gul, R.; Roy, U. N.; Camarda, G. S.; Hossain, A.; Yang, G.; Vanier, P.; Lordi, V.; Varley, J.; James, R. B.

2017-03-01

In this paper, the properties of point defects in Cd1-xZnxTe1-ySey (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the VCd- concentration. In Travelling Heater Method (THM) and Bridgman Method (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of VCd- and two additional traps (attributed to Tei- and TeCd++ appearing at around Ev + 0.26 eV and Ec - 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.

Evaluation of ZnSe(S) Quantum Dots on the Cell Viability of Prostate Cancer Cell (PC3)

NASA Astrophysics Data System (ADS)

Calderón-Ortiz, E. R.; Bailón-Ruiz, S.; Martínez-Ferrer, M.; Rodríguez-Orengo, J. F.; Perales-Pérez, O.

2018-05-01

Nanomedicine is described as the process of diagnosing, treating, and preventing disease using nanostructured materials to improve human health. Quantum dots (QDs) host suitable optical properties for light-driven therapies, e.g., photo-dynamic therapy (PDT), for cancer treatment. The efficacy of QDs-assisted PDT relies on the capability of QDs to generate reactive oxygen species, which can be enhanced by inducing structural defects at the atomic level. Furthermore, data concerning the applicability of QDs-PDT in medicine is scarce, particularly for prostate cancer cells (PC3). On this basis, and as a first step in this research, the present report focused on the direct aqueous-synthesis of water-stable ZnSe(S) QDs via a microwave-assisted synthesis approach in the presence of thioglycolic acid (TGA) and mercaptopropionic acid (MPA). XRD analysis confirmed the face centered cubic structure in host ZnS; the average crystallite size was estimated at 10 nm. The photoluminescence of MPA-capped ZnSe(S) showed a strong main emission peak around 363 nm and a trap emission, attributed to structural defects, centered on 450 nm. The photoluminescence spectrum for TGA-capped ZnSe(S) QDs exhibited only the band gap peak around 390 nm, suggesting the absence of major structural defects. In turn, cell viability assays TGA-capped ZnSe(S) were not toxic at concentrations up to 100 ppm, whereas MPA-capped ZnSe(S) evidenced cytotoxicity at a concentration of 10 ppm. The lethal dose (LD50) for the MPA-capped ZnSe(S) in the PC3 cell line was 36 ppm and 35 ppm for 24 h and 48 h, respectively.

Trapping of drops by wetting defects

PubMed Central

't Mannetje, Dieter; Ghosh, Somnath; Lagraauw, Rudy; Otten, Simon; Pit, Arjen; Berendsen, Christian; Zeegers, Jos; van den Ende, Dirk; Mugele, Frieder

2014-01-01

Controlling the motion of drops on solid surfaces is crucial in many natural phenomena and technological processes including the collection and removal of rain drops, cleaning technology and heat exchangers. Topographic and chemical heterogeneities on solid surfaces give rise to pinning forces that can capture and steer drops in desired directions. Here we determine general physical conditions required for capturing sliding drops on an inclined plane that is equipped with electrically tunable wetting defects. By mapping the drop dynamics on the one-dimensional motion of a point mass, we demonstrate that the trapping process is controlled by two dimensionless parameters, the trapping strength measured in units of the driving force and the ratio between a viscous and an inertial time scale. Complementary experiments involving superhydrophobic surfaces with wetting defects demonstrate the general applicability of the concept. Moreover, we show that electrically tunable defects can be used to guide sliding drops along actively switchable tracks—with potential applications in microfluidics. PMID:24721935

Defect annealing in electron-irradiated boron-doped silicon

NASA Astrophysics Data System (ADS)

Awadelkarim, O. O.; Chen, W. M.; Weman, H.; Monemar, B.

1990-01-01

Defects introduced by room-temperature electron irradiation and subsequent annealing in boron-doped silicon are studied by means of deep-level transient spectroscopy, photoluminescence, and optical detection of magnetic resonance (ODMR) techniques. ODMR reveals a thermally induced paramagnetic (S=(1/2) defect center that is produced following annealing at 400 °C. The center possesses a C3v point-group symmetry with the trigonal axis along <111>. Detailed analysis of the ODMR line shapes indicates the involvement of a silicon atom in the defect center. It appears from the results that boron is either another possible defect component or an essential catalyst for the defect formation. The occurrence of the ODMR signal together with a luminescence band peaking at 0.80 eV is independent of oxygen or carbon contents in the samples. The band does not belong to the center observed by ODMR; however, a decrease in its intensity, under resonance conditions in the ODMR center, is explained in terms of carrier recombination, capture, or energy-transfer processes involving this center. Annealing studies on a metastable hole trap observed at Ev+0.12 eV (Ev being the top of the valence band) establish the trap assignment to a carbon-interstitial-carbon-substitutional pair. The introduction of postannealing traps observed at Ev+0.07 eV, Ev+0.45 eV, and Ec-0.59 eV (Ec being the conduction-band edge) is found to be boron dependent. Isothermal formation of the centers responsible for these traps are observed, and none of the traps appears to be related to either the center observed by ODMR or the 0.80-eV band.

Two-dimensional quantum ring in a graphene layer in the presence of a Aharonov–Bohm flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaro Neto, José; Bueno, M.J.; Furtado, Claudio, E-mail: furtado@fisica.ufpb.br

2016-10-15

In this paper we study the relativistic quantum dynamics of a massless fermion confined in a quantum ring. We use a model of confining potential and introduce the interaction via Dirac oscillator coupling, which provides ring confinement for massless Dirac fermions. The energy levels and corresponding eigenfunctions for this model in graphene layer in the presence of Aharonov–Bohm flux in the centre of the ring and the expression for persistent current in this model are derived. We also investigate the model for quantum ring in graphene layer in the presence of a disclination and a magnetic flux. The energy spectrummore » and wave function are obtained exactly for this case. We see that the persistent current depends on parameters characterizing the topological defect.« less

A review on single photon sources in silicon carbide.

PubMed

Lohrmann, A; Johnson, B C; McCallum, J C; Castelletto, S

2017-03-01

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Quantum dynamics of tunneling dominated reactions at low temperatures

NASA Astrophysics Data System (ADS)

Hazra, Jisha; Balakrishnan, N.

2015-05-01

We report a quantum dynamics study of the Li + HF → LiF + H reaction at low temperatures of interest to cooling and trapping experiments. Contributions from non-zero partial waves are analyzed and results show narrow resonances in the energy dependence of the cross section that survive partial wave summation. The computations are performed using the ABC code and a simple modification of the ABC code that enables separate energy cutoffs for the reactant and product rovibrational energy levels is found to dramatically reduce the basis set size and computational expense. Results obtained using two ab initio electronic potential energy surfaces for the LiHF system show strong sensitivity to the choice of the potential. In particular, small differences in the barrier heights of the two potential surfaces are found to dramatically influence the reaction cross sections at low energies. Comparison with recent measurements of the reaction cross section (Bobbenkamp et al 2011 J. Chem. Phys. 135 204306) shows similar energy dependence in the threshold regime and an overall good agreement with experimental data compared to previous theoretical results. Also, usefulness of a recently introduced method for ultracold reactions that employ the quantum close-coupling method at short-range and the multichannel quantum defect theory at long-range, is demonstrated in accurately evaluating product state-resolved cross sections for D + H2 and H + D2 reactions.

First-principles study of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material

NASA Astrophysics Data System (ADS)

Duan, H.; Dong, Y. Z.; Huang, Y.; Hu, Y. H.; Chen, X. S.

2016-01-01

Electronic structures of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material are investigated using first-principles calculations. Si vacancies are too high in energy to play any role in the persistent luminescence of Sr2MgSi2O7 phosphor. Mg vacancies form easier than Sr vacancies as a result of strain relief. Among all the vacancies, O1 vacancies stand out as a likely candidate because they are the most favorable in energy and introduce an empty triply degenerate state just below the CBM and a fully-occupied singlet state at ~1 eV above the VBM, constituting in this case effective hole trap level and electron trap levels, respectively. Mg vacancies are unlikely to explain the persistent luminescence because of its too shallow electron trap level but they may compensate the hole trap associated with O1 vacancies. We yield consistent evidence for the defect physics of these vacancy defects on the basis of the equilibrium properties of Sr2MgSi2O7, total-energy calculations, and electronic structures. The persistent luminescence mechanism of Sr2MgSi2O7:Eu2+, Dy3+ phosphor is also discussed based on our results for O1 vacancies trap center. Our results provide a guide to more refined experiments to control intrinsic traps, whereby probing synthetic strategies toward new improved phosphors.

Photoexcited emission efficiencies of zinc oxide

NASA Astrophysics Data System (ADS)

Foreman, John Vincent

Optoelectronic properties of the II-VI semiconductor zinc oxide (ZnO) have been studied scientifically for almost 60 years; however, many fundamental questions remain unanswered about its two primary emission bands--the exciton-related luminescence in the ultraviolet and the defect-related emission band centered in the green portion of the visible spectrum. The work in this dissertation was motivated by the surprising optical properties of a ZnO nanowire sample grown by the group of Prof. Jie Liu, Department of Chemistry, Duke University. We found that this nanowire sample exhibited defect-related green/white emission of unprecedented intensity relative to near-band-edge luminescence. The experimental work comprising this dissertation was designed to explain the optical properties of this ZnO nanowire sample. Understanding the physics underlying such exceptional intensity of green emission addresses many of the open questions of ZnO research and assesses the possibility of using ZnO nanostructures as an ultraviolet-excited, broadband visible phosphor. The goal of this dissertation is to provide insight into what factors influence the radiative and nonradiative recombination efficiencies of ZnO by characterizing simultaneously the optical properties of the near-band-edge ultraviolet and the defect-related green emission bands. Specifically, we seek to understand the mechanisms of ultraviolet and green emission, the mechanism of energy transfer between them, and the evolution of their emission efficiencies with parameters such as excitation density and sample temperature. These fundamental but unanswered questions of ZnO emission are addressed here by using a novel combination of ultrafast spectroscopic techniques in conjunction with a systematic set of ZnO samples. Through this systematic investigation, ZnO may be realistically assessed as a potential green/white light phosphor. Photoluminescence techniques are used to characterize the thermal quenching behavior of both emission bands in micrometer-scale ZnO powders. Green luminescence quenching is described by activation energies associated with bound excitons. We find that green luminescence efficiency is maximized when excitons are localized in the vicinity of green-emitting defects. Subsequent photoluminescence excitation measurements performed at multiple temperatures independently verified that green band photoluminescence intensity directly correlates with the photogenerated exciton population. The spatial distributions of green-emitting defects and nonradiative traps are elucidated by an innovative combination of quantum efficiency and time-integrated/resolved photoluminescence measurements. By combining these techniques for the first time, we take advantage of the drastically different absorption coefficients for one- and two-photon excitations to provide details about the types and concentrations of surface and bulk defects and to demonstrate the non-negligible effects of reabsorption. A comparison of results for unannealed and annealed ZnO powders indicates that the annealing process creates a high density of green-emitting defects near the surface of the sample while simultaneously reducing the density of bulk nonradiative traps. These experimental results are discussed in the context of a simple rate equation model that accounts for the quantum efficiencies of both emission bands. For both femtosecond pulsed and continuous-wave excitations, the green band efficiency is found to decrease with increasing excitation density--from 35% to 5% for pulsed excitation spanning 1-1000 muJ/cm--2, and from 60% to 5% for continuous excitation in the range 0.01-10 W/cm --2. On the other hand, near-band-edge emission efficiency increases from 0.4% to 25% for increasing pulsed excitation density and from 0.1% to 0.6% for continuous excitation. It is shown experimentally that these changes in efficiency correspond to a reduction in exciton formation efficiency. The differences in efficiencies for pulsed versus continuous-wave excitation are described by changes in the relative rates of exciton luminescence and exciton capture at green defects based on an extended rate equation model that accounts for the excitation density dependence of both luminescence bands. In using a systematic set of ZnO samples and a novel combination of optical techniques to characterize them, this body of work presents a comprehensive and detailed physical picture of recombination mechanisms in ZnO. The insight provided by these results has immediate implications for material growth/processing techniques and should help material growers control the relative efficiencies of ultraviolet, green/visible, and nonradiative recombination channels in ZnO.

Infrared Quenched Photoinduced Superconductivity

NASA Astrophysics Data System (ADS)

Federici, J. F.; Chew, D.; Guttierez-Solana, J.; Molina, G.; Savin, W.; Wilber, W.

1996-03-01

Persistant photoconductivity (PPC) and photoinduced superconductivity (PISC) in oxygen deficient YBa_2Cu_3O_6+x have received recent attention. It has been suggested that oxygen vacancy defects play an important role in the PISC/PPC mechanism.(J. F. Federici, D. Chew, B. Welker, W. Savin, J. Gutierrez-Solana, and T. Fink, Phys. Rev. B), December 1995 Supported by National Science Foundation In this model, defects trap photogenerated electrons so that electron-hole recombination can not occur thereby allowing photogenerated holes to contribute to the carrier density. Nominally, the photoinduced state is long-lived, persisting for days at low temperature. Experiment results will be presented demonstrating that the photoinduced superconductivity state can be quenched using infrared radiation. Implications for the validity of the PISC/PCC defect model will be discussed.

Generic equilibration dynamics of planar defects in trapped atomic superfluids

DOE PAGES

Scherpelz, Peter; Padavić, Karmela; Murray, Andy; ...

2015-03-18

Here, we investigate equilibration processes shortly after sudden perturbations are applied to ultracold trapped superfluids. We show the similarity of phase imprinting and localized density depletion perturbations, both of which initially are found to produce “phase walls”. These planar defects are associated with a sharp gradient in the phase. Importantly they relax following a quite general sequence. Our studies, based on simulations of the complex time-dependent Ginzburg-Landau equation, address the challenge posed by these experiments: how a superfluid eventually eliminatesa spatially extended planar defect. The processes involved are necessarily more complex than equilibration involving simpler line vortices. An essential mechanismmore » form relaxation involves repeated formation and loss of vortex rings near the trap edge.« less

Trap elimination and reduction of size dispersion due to aging in CdS x Se1- x quantum dots

NASA Astrophysics Data System (ADS)

Verma, Abhishek; Nagpal, Swati; Pandey, Praveen K.; Bhatnagar, P. K.; Mathur, P. C.

2007-12-01

Quantum Dots of CdS x Se1- x embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination. The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to 3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum confinement.

Exciton-polariton trapping and potential landscape engineering

NASA Astrophysics Data System (ADS)

Schneider, C.; Winkler, K.; Fraser, M. D.; Kamp, M.; Yamamoto, Y.; Ostrovskaya, E. A.; Höfling, S.

2017-01-01

Exciton-polaritons in semiconductor microcavities have become a model system for the studies of dynamical Bose-Einstein condensation, macroscopic coherence, many-body effects, nonclassical states of light and matter, and possibly quantum phase transitions in a solid state. These low-mass bosonic quasiparticles can condense at comparatively high temperatures up to 300 K, and preserve the fundamental properties of the condensate, such as coherence in space and time domain, even when they are out of equilibrium with the environment. Although the presence of a confining potential is not strictly necessary in order to observe Bose-Einstein condensation, engineering of the polariton confinement is a key to controlling, shaping, and directing the flow of polaritons. Prototype polariton-based optoelectronic devices rely on ultrafast photon-like velocities and strong nonlinearities exhibited by polaritons, as well as on their tailored confinement. Nanotechnology provides several pathways to achieving polariton confinement, and the specific features and advantages of different methods are discussed in this review. Being hybrid exciton-photon quasiparticles, polaritons can be trapped via their excitonic as well as photonic component, which leads to a wide choice of highly complementary trapping techniques. Here, we highlight the almost free choice of the confinement strengths and trapping geometries that provide powerful means for control and manipulation of the polariton systems both in the semi-classical and quantum regimes. Furthermore, the possibilities to observe effects of the polariton blockade, Mott insulator physics, and population of higher-order energy bands in sophisticated lattice potentials are discussed. Observation of such effects could lead to realization of novel polaritonic non-classical light sources and quantum simulators.

Establishment of a Mouse Model with Misregulated Chromosome Condensation due to Defective Mcph1 Function

PubMed Central

Walther, Diego J.; Dopatka, Monika; Dutrannoy, Véronique; Busche, Andreas; Meyer, Franziska; Nowak, Stefanie; Nowak, Jean; Zabel, Claus; Klose, Joachim; Esquitino, Veronica; Garshasbi, Masoud; Kuss, Andreas W.; Ropers, Hans-Hilger; Mueller, Susanne; Poehlmann, Charlotte; Gavvovidis, Ioannis; Schindler, Detlev; Sperling, Karl; Neitzel, Heidemarie

2010-01-01

Mutations in the human gene MCPH1 cause primary microcephaly associated with a unique cellular phenotype with premature chromosome condensation (PCC) in early G2 phase and delayed decondensation post-mitosis (PCC syndrome). The gene encodes the BRCT-domain containing protein microcephalin/BRIT1. Apart from its role in the regulation of chromosome condensation, the protein is involved in the cellular response to DNA damage. We report here on the first mouse model of impaired Mcph1-function. The model was established based on an embryonic stem cell line from BayGenomics (RR0608) containing a gene trap in intron 12 of the Mcph1 gene deleting the C-terminal BRCT-domain of the protein. Although residual wild type allele can be detected by quantitative real-time PCR cell cultures generated from mouse tissues bearing the homozygous gene trap mutation display the cellular phenotype of misregulated chromosome condensation that is characteristic for the human disorder, confirming defective Mcph1 function due to the gene trap mutation. While surprisingly the DNA damage response (formation of repair foci, chromosomal breakage, and G2/M checkpoint function after irradiation) appears to be largely normal in cell cultures derived from Mcph1gt/gt mice, the overall survival rates of the Mcph1gt/gt animals are significantly reduced compared to wild type and heterozygous mice. However, we could not detect clear signs of premature malignant disease development due to the perturbed Mcph1 function. Moreover, the animals show no obvious physical phenotype and no reduced fertility. Body and brain size are within the range of wild type controls. Gene expression on RNA and protein level did not reveal any specific pattern of differentially regulated genes. To the best of our knowledge this represents the first mammalian transgenic model displaying a defect in mitotic chromosome condensation and is also the first mouse model for impaired Mcph1-function. PMID:20169082

Establishment of a mouse model with misregulated chromosome condensation due to defective Mcph1 function.

PubMed

Trimborn, Marc; Ghani, Mahdi; Walther, Diego J; Dopatka, Monika; Dutrannoy, Véronique; Busche, Andreas; Meyer, Franziska; Nowak, Stefanie; Nowak, Jean; Zabel, Claus; Klose, Joachim; Esquitino, Veronica; Garshasbi, Masoud; Kuss, Andreas W; Ropers, Hans-Hilger; Mueller, Susanne; Poehlmann, Charlotte; Gavvovidis, Ioannis; Schindler, Detlev; Sperling, Karl; Neitzel, Heidemarie

2010-02-16

Mutations in the human gene MCPH1 cause primary microcephaly associated with a unique cellular phenotype with premature chromosome condensation (PCC) in early G2 phase and delayed decondensation post-mitosis (PCC syndrome). The gene encodes the BRCT-domain containing protein microcephalin/BRIT1. Apart from its role in the regulation of chromosome condensation, the protein is involved in the cellular response to DNA damage. We report here on the first mouse model of impaired Mcph1-function. The model was established based on an embryonic stem cell line from BayGenomics (RR0608) containing a gene trap in intron 12 of the Mcph1 gene deleting the C-terminal BRCT-domain of the protein. Although residual wild type allele can be detected by quantitative real-time PCR cell cultures generated from mouse tissues bearing the homozygous gene trap mutation display the cellular phenotype of misregulated chromosome condensation that is characteristic for the human disorder, confirming defective Mcph1 function due to the gene trap mutation. While surprisingly the DNA damage response (formation of repair foci, chromosomal breakage, and G2/M checkpoint function after irradiation) appears to be largely normal in cell cultures derived from Mcph1(gt/gt) mice, the overall survival rates of the Mcph1(gt/gt) animals are significantly reduced compared to wild type and heterozygous mice. However, we could not detect clear signs of premature malignant disease development due to the perturbed Mcph1 function. Moreover, the animals show no obvious physical phenotype and no reduced fertility. Body and brain size are within the range of wild type controls. Gene expression on RNA and protein level did not reveal any specific pattern of differentially regulated genes. To the best of our knowledge this represents the first mammalian transgenic model displaying a defect in mitotic chromosome condensation and is also the first mouse model for impaired Mcph1-function.

Microfabricated Waveguide Atom Traps.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jau, Yuan-Yu

A nanoscale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon-atom interactions . A neutral - atom platform based on this microfabrication technology will be prealigned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading coldmore » atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano-waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.« less

InAs/InGaSb Type-II strained layer superlattice IR detectors

NASA Astrophysics Data System (ADS)

Nathan, Vaidya; Anselm, K. Alex; Lin, C. H. T.; Johnson, Jeffrey L.

2002-05-01

InAs/InGaSb type2 strained layer superlattice (SLS) combines the advantages of III-V materials technology with the strong, broad-band absorption, and wavelength tunability of HgCdTe. In fact, the significantly reduced tunneling and Auger recombination rates in SLS compared to those in HgCdTe should enable SLS detectors to outperform HgCdTe. We report the results of our investigation of InAs/InGaSb type2 strained layer superlattices (SLS)for LWIR photovoltaic detector development. We modeled the band structure, and absorption spectrum of SLS's, and achieved good agreement with experimental data. We systematically investigated the SLS growth conditions, resulting in good uniformity, and the elimination of several defects. We designed, developed and evaluated 16x16 array of 13 micron cutoff photovoltaic detectors. Photodiodes with cutoff wavelengths of 13 and 18microns were demonstrated, which are the longest wavelengths demonstrated for this material system. Quantum efficiencies commensurate with the superlattice thickness were demonstrated and verified at AFRL. The electrical properties show excessive leakage current, most likely due to trap-assisted tunneling.

Quantum criticality and universal scaling of strongly attractive spin-imbalanced Fermi gases in a one-dimensional harmonic trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Xiangguo; Chen Shu; Guan Xiwen

2011-07-15

We investigate quantum criticality and universal scaling of strongly attractive Fermi gases confined in a one-dimensional harmonic trap. We demonstrate from the power-law scaling of the thermodynamic properties that current experiments on this system are capable of measuring universal features at quantum criticality, such as universal scaling and Tomonaga-Luttinger liquid physics. The results also provide insights on recent measurements of key features of the phase diagram of a spin-imbalanced atomic Fermi gas [Y. Liao et al., Nature (London) 467, 567 (2010)] and point to further study of quantum critical phenomena in ultracold atomic Fermi gases.

Automating quantum experiment control

NASA Astrophysics Data System (ADS)

Stevens, Kelly E.; Amini, Jason M.; Doret, S. Charles; Mohler, Greg; Volin, Curtis; Harter, Alexa W.

2017-03-01

The field of quantum information processing is rapidly advancing. As the control of quantum systems approaches the level needed for useful computation, the physical hardware underlying the quantum systems is becoming increasingly complex. It is already becoming impractical to manually code control for the larger hardware implementations. In this chapter, we will employ an approach to the problem of system control that parallels compiler design for a classical computer. We will start with a candidate quantum computing technology, the surface electrode ion trap, and build a system instruction language which can be generated from a simple machine-independent programming language via compilation. We incorporate compile time generation of ion routing that separates the algorithm description from the physical geometry of the hardware. Extending this approach to automatic routing at run time allows for automated initialization of qubit number and placement and additionally allows for automated recovery after catastrophic events such as qubit loss. To show that these systems can handle real hardware, we present a simple demonstration system that routes two ions around a multi-zone ion trap and handles ion loss and ion placement. While we will mainly use examples from transport-based ion trap quantum computing, many of the issues and solutions are applicable to other architectures.

Quantum simulation of the integer factorization problem: Bell states in a Penning trap

NASA Astrophysics Data System (ADS)

Rosales, Jose Luis; Martin, Vicente

2018-03-01

The arithmetic problem of factoring an integer N can be translated into the physics of a quantum device, a result that supports Pólya's and Hilbert's conjecture to demonstrate Riemann's hypothesis. The energies of this system, being univocally related to the factors of N , are the eigenvalues of a bounded Hamiltonian. Here we solve the quantum conditions and show that the histogram of the discrete energies, provided by the spectrum of the system, should be interpreted in number theory as the relative probability for a prime to be a factor candidate of N . This is equivalent to a quantum sieve that is shown to require only o (ln√{N}) 3 energy measurements to solve the problem, recovering Shor's complexity result. Hence the outcome can be seen as a probability map that a pair of primes solve the given factorization problem. Furthermore, we show that a possible embodiment of this quantum simulator corresponds to two entangled particles in a Penning trap. The possibility to build the simulator experimentally is studied in detail. The results show that factoring numbers, many orders of magnitude larger than those computed with experimentally available quantum computers, is achievable using typical parameters in Penning traps.

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duc, Tran Thien; School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi; Pozina, Galia

2016-03-07

Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of twomore » electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.« less

Scaling Trapped Ion Quantum Computers Using Fast Gates and Microtraps

NASA Astrophysics Data System (ADS)

Ratcliffe, Alexander K.; Taylor, Richard L.; Hope, Joseph J.; Carvalho, André R. R.

2018-06-01

Most attempts to produce a scalable quantum information processing platform based on ion traps have focused on the shuttling of ions in segmented traps. We show that an architecture based on an array of microtraps with fast gates will outperform architectures based on ion shuttling. This system requires higher power lasers but does not require the manipulation of potentials or shuttling of ions. This improves optical access, reduces the complexity of the trap, and reduces the number of conductive surfaces close to the ions. The use of fast gates also removes limitations on the gate time. Error rates of 10-5 are shown to be possible with 250 mW laser power and a trap separation of 100 μ m . The performance of the gates is shown to be robust to the limitations in the laser repetition rate and the presence of many ions in the trap array.

Atomic quantum simulation of the lattice gauge-Higgs model: Higgs couplings and emergence of exact local gauge symmetry.

PubMed

Kasamatsu, Kenichi; Ichinose, Ikuo; Matsui, Tetsuo

2013-09-13

Recently, the possibility of quantum simulation of dynamical gauge fields was pointed out by using a system of cold atoms trapped on each link in an optical lattice. However, to implement exact local gauge invariance, fine-tuning the interaction parameters among atoms is necessary. In the present Letter, we study the effect of violation of the U(1) local gauge invariance by relaxing the fine-tuning of the parameters and showing that a wide variety of cold atoms is still a faithful quantum simulator for a U(1) gauge-Higgs model containing a Higgs field sitting on sites. The clarification of the dynamics of this gauge-Higgs model sheds some light upon various unsolved problems, including the inflation process of the early Universe. We study the phase structure of this model by Monte Carlo simulation and also discuss the atomic characteristics of the Higgs phase in each simulator.

Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction

NASA Astrophysics Data System (ADS)

Shin, Ik-Soo; Kim, Jung-Min; Jeun, Jun-Ho; Yoo, Seok-Hyun; Ge, Ziyi; Hong, Jong-In; Ho Bang, Jin; Kim, Yong-Sang

2012-04-01

An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory.

Single-Atom Single-Photon Quantum Interface

NASA Astrophysics Data System (ADS)

Moehring, David; Bochmann, Joerg; Muecke, Martin; Specht, Holger; Weber, Bernhard; Wilk, Tatjana; Rempe, Gerhard

2008-05-01

By combining atom trapping techniques and cavity cooling schemes we are able to trap a single neutral atom inside a high-finesse cavity for several tens of seconds. We show that our coupled atom-cavity system can be used to generate single photons in a controlled way. With our long trapping times and high single-photon production efficiency, the non-classical properties of the emitted light can be shown in the photon correlations of a single atom. In a similar atom-cavity setup, we investigate the interface between atoms and photons by entangling a single atom with a single photon emitted into the cavity and by further mapping the quantum state of the atom onto a second single photon. These schemes are intrinsically deterministic and establish the basic element required to realize a distributed quantum network with individual atoms at rest as quantum memories and single flying photons as quantum messengers. This work was supported by the Deutsche Forschungsgemeinschaft, and the European Union SCALA and CONQUEST programs. D. L. M. acknowledges support from the Alexander von Humboldt Foundation.

Implementation of the semiclassical quantum Fourier transform in a scalable system.

PubMed

Chiaverini, J; Britton, J; Leibfried, D; Knill, E; Barrett, M D; Blakestad, R B; Itano, W M; Jost, J D; Langer, C; Ozeri, R; Schaetz, T; Wineland, D J

2005-05-13

We report the implementation of the semiclassical quantum Fourier transform in a system of three beryllium ion qubits (two-level quantum systems) confined in a segmented multizone trap. The quantum Fourier transform is the crucial final step in Shor's algorithm, and it acts on a register of qubits to determine the periodicity of the quantum state's amplitudes. Because only probability amplitudes are required for this task, a more efficient semiclassical version can be used, for which only single-qubit operations conditioned on measurement outcomes are required. We apply the transform to several input states of different periodicities; the results enable the location of peaks corresponding to the original periods. This demonstration incorporates the key elements of a scalable ion-trap architecture, suggesting the future capability of applying the quantum Fourier transform to a large number of qubits as required for a useful quantum factoring algorithm.

Microstructure Hierarchical Model of Competitive e+-Ps Trapping in Nanostructurized Substances: from Nanoparticle-Uniform to Nanoparticle-Biased Systems.

PubMed

Shpotyuk, Oleh; Ingram, Adam; Bujňáková, Zdenka; Baláž, Peter

2017-12-01

Microstructure hierarchical model considering the free-volume elements at the level of interacting crystallites (non-spherical approximation) and the agglomerates of these crystallites (spherical approximation) was developed to describe free-volume evolution in mechanochemically milled As 4 S 4 /ZnS composites employing positron annihilation spectroscopy in a lifetime measuring mode. Positron lifetime spectra were reconstructed from unconstrained three-term decomposition procedure and further subjected to parameterization using x3-x2-coupling decomposition algorithm. Intrinsic inhomogeneities due to coarse-grained As 4 S 4 and fine-grained ZnS nanoparticles were adequately described in terms of substitution trapping in positron and positronium (Ps) (bound positron-electron) states due to interfacial triple junctions between contacting particles and own free-volume defects in boundary compounds. Compositionally dependent nanostructurization in As 4 S 4 /ZnS nanocomposite system was imagined as conversion from o-Ps trapping sites to positron traps. The calculated trapping parameters that were shown could be useful to characterize adequately the nanospace filling in As 4 S 4 /ZnS composites.

Quantum walks with an anisotropic coin I: spectral theory

NASA Astrophysics Data System (ADS)

Richard, S.; Suzuki, A.; Tiedra de Aldecoa, R.

2018-02-01

We perform the spectral analysis of the evolution operator U of quantum walks with an anisotropic coin, which include one-defect models, two-phase quantum walks, and topological phase quantum walks as special cases. In particular, we determine the essential spectrum of U, we show the existence of locally U-smooth operators, we prove the discreteness of the eigenvalues of U outside the thresholds, and we prove the absence of singular continuous spectrum for U. Our analysis is based on new commutator methods for unitary operators in a two-Hilbert spaces setting, which are of independent interest.

Quantum Prisoner’s Dilemma game on hypergraph networks

NASA Astrophysics Data System (ADS)

Pawela, Łukasz; Sładkowski, Jan

2013-02-01

We study the possible advantages of adopting quantum strategies in multi-player evolutionary games. We base our study on the three-player Prisoner’s Dilemma (PD) game. In order to model the simultaneous interaction between three agents we use hypergraphs and hypergraph networks. In particular, we study two types of networks: a random network and a SF-like network. The obtained results show that in the case of a three-player game on a hypergraph network, quantum strategies are not necessarily stochastically stable strategies. In some cases, the defection strategy can be as good as a quantum one.

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

NASA Technical Reports Server (NTRS)

Lagowski, J.; Lin, D. G.; Chen, T.-P.; Skowronski, M.; Gatos, H. C.

1985-01-01

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

NASA Astrophysics Data System (ADS)

Hamzah, Afiq; Hamid, Fatimah A.; Ismail, Razali

2016-12-01

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped conditions. The UCCM model of highly doped SRGMOSFETs is derived to obtain the exact equivalent expression as in the undoped case. Taking advantage of the undoped explicit charge-based expression, the asymptotic limits for below threshold and above threshold have been redefined to include the effect of trap states for heavily doped cases. After solving the asymptotic limits, an explicit mobile charge expression is obtained which includes the trap state effects. The explicit mobile charge model shows very good agreement with respect to numerical simulation over practical terminal voltages, doping concentration, geometry effects, and trap state effects due to the fixed oxide charges and interface traps. Then, the drain current is obtained using the Pao-Sah's dual integral, which is expressed as a function of inversion charge densities at the source/drain ends. The drain current agreed well with the implicit solution and numerical simulation for all regions of operation without employing any empirical parameters. A comparison with previous explicit models has been conducted to verify the competency of the proposed model with the doping concentration of 1× {10}19 {{cm}}-3, as the proposed model has better advantages in terms of its simplicity and accuracy at a higher doping concentration.

Continuous-time quantum walk on an extended star graph: Trapping and superradiance transition

NASA Astrophysics Data System (ADS)

Yalouz, Saad; Pouthier, Vincent

2018-02-01

A tight-binding model is introduced for describing the dynamics of an exciton on an extended star graph whose central node is occupied by a trap. On this graph, the exciton dynamics is governed by two kinds of eigenstates: many eigenstates are associated with degenerate real eigenvalues insensitive to the trap, whereas three decaying eigenstates characterized by complex energies contribute to the trapping process. It is shown that the excitonic population absorbed by the trap depends on the size of the graph, only. By contrast, both the size parameters and the absorption rate control the dynamics of the trapping. When these parameters are judiciously chosen, the efficiency of the transfer is optimized resulting in the minimization of the absorption time. Analysis of the eigenstates reveals that such a feature arises around the superradiance transition. Moreover, depending on the size of the network, two situations are highlighted where the transport efficiency is either superoptimized or suboptimized.

Measurement-induced operation of two-ion quantum heat machines

NASA Astrophysics Data System (ADS)

Chand, Suman; Biswas, Asoka

2017-03-01

We show how one can implement a quantum heat machine by using two interacting trapped ions, in presence of a thermal bath. The electronic states of the ions act like a working substance, while the vibrational mode is modelled as the cold bath. The heat exchange with the cold bath is mimicked by the projective measurement of the electronic states. We show how such measurement in a suitable basis can lead to either a quantum heat engine or a refrigerator, which undergoes a quantum Otto cycle. The local magnetic field is adiabatically changed during the heat cycle. The performance of the heat machine depends upon the interaction strength between the ions, the magnetic fields, and the measurement cost. In our model, the coupling to the hot and the cold baths is never switched off in an alternative fashion during the heat cycle, unlike other existing proposals of quantum heat engines. This makes our proposal experimentally realizable using current tapped-ion technology.

Measurement-induced operation of two-ion quantum heat machines.

PubMed

Chand, Suman; Biswas, Asoka

2017-03-01

We show how one can implement a quantum heat machine by using two interacting trapped ions, in presence of a thermal bath. The electronic states of the ions act like a working substance, while the vibrational mode is modelled as the cold bath. The heat exchange with the cold bath is mimicked by the projective measurement of the electronic states. We show how such measurement in a suitable basis can lead to either a quantum heat engine or a refrigerator, which undergoes a quantum Otto cycle. The local magnetic field is adiabatically changed during the heat cycle. The performance of the heat machine depends upon the interaction strength between the ions, the magnetic fields, and the measurement cost. In our model, the coupling to the hot and the cold baths is never switched off in an alternative fashion during the heat cycle, unlike other existing proposals of quantum heat engines. This makes our proposal experimentally realizable using current tapped-ion technology.

Scalable loading of a two-dimensional trapped-ion array

PubMed Central

Bruzewicz, Colin D.; McConnell, Robert; Chiaverini, John; Sage, Jeremy M.

2016-01-01

Two-dimensional arrays of trapped-ion qubits are attractive platforms for scalable quantum information processing. Sufficiently rapid reloading capable of sustaining a large array, however, remains a significant challenge. Here with the use of a continuous flux of pre-cooled neutral atoms from a remotely located source, we achieve fast loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive two-dimensional arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux. PMID:27677357

Electric dipole moment of magnetoexciton in concentric quantum rings

NASA Astrophysics Data System (ADS)

García, L. F.; Mikhailov, I. D.; Revinova, S. Yu

2017-12-01

We study properties of exciton in a weakly coupled concentric quantum rings, penetrated by an axially directed magnetic flux and subjected to an electric field in the ring’s plane. To this end, we adopt a simple model of quasi-one-dimensional rotator, for which the wave functions and the corresponding energies we found by using the double Fourier series expansion method. Revealed multiple intersections of the energy levels provide conditions for abrupt changes of the radial and the angular quantum numbers, making possible the tunnelling of carriers between rings and allowing the formation of a permanent large dipole moment. We show that the electric and magnetic polarizability of concentric quantum rings with a trapped exciton are very sensible to external electric and magnetic fields.

Energetic mapping of oxide traps in MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Illarionov, Yury Yu; Knobloch, Theresia; Waltl, Michael; Rzepa, Gerhard; Pospischil, Andreas; Polyushkin, Dmitry K.; Furchi, Marco M.; Mueller, Thomas; Grasser, Tibor

2017-06-01

The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in double-gated MoS2 FETs and show that this issue is nothing else than a combination of threshold voltage shifts resulting from positive and negative bias-temperature instabilities. While these instabilities are well known from silicon devices, they are even more important in 2D devices given the considerably larger defect densities. Most importantly, the magnitudes of these threshold voltage shifts depend strongly on the density and energetic alignment of the active oxide traps. Based on this, we introduce the incremental hysteresis sweep method which allows for an accurate mapping of these defects and extract their energy distributions from simulations. By applying our method to analyze the impact of oxide traps situated in the Al2O3 top gate of several devices, we confirm its versatility. Since all 2D devices investigated so far suffer from a similar hysteresis behavior, the incremental hysteresis sweep method provides a unique and powerful way for the detailed characterization of their defect bands.

Small polarons and point defects in LaFeO3

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

The proton-conductive perovskite-type LaFeO3 is a promising negative-electrode material for Ni/metal-hydride (Ni-MH) batteries. It has a discharge capacity up to 530 mAhg-1 at 333 K, which is significantly higher than commercialized AB5-type alloys. To elucidate the underlying mechanism of this performance, we have investigated the structural and electronic properties of bulk LaFeO3, as well as the effect of point defects, using hybrid density functional methods. LaFeO3 is antiferromagnetic in the ground state with a band gap of 3.54 eV. Small hole and electron polarons can form through self- or point-defect-assisted trapping. We find that La vacancies and Sr substitutional on La sites are shallow acceptors with the induced holes trapped as small polarons, while O and Fe vacancies are deep defect centers. Hydrogen interstitials behave like shallow donors, with the donor electrons localized on nearby iron sites as electron polarons. With a large trapping energy, these polarons can act as electron or hole traps and affect the electrical performance of LaFeO3 as the negative electrode for Ni-MH batteries. We acknowledge DOE for financial support.

Loading an Equidistant Ion Chain in a Ring Shaped Surface Trap and Anomalous Heating Studies with a High Optical Access Trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabakov, Boyan

2015-07-01

Microfabricated segmented surface ion traps are one viable avenue to scalable quantum information processing. At Sandia National Laboratories we design, fabricate, and characterize such traps. Our unique fabrication capabilities allow us to design traps that facilitate tasks beyond quantum information processing. The design and performance of a trap with a target capability of storing hundreds of equally spaced ions on a ring is described. Such a device could aid experimental studies of phenomena as diverse as Hawking radiation, quantum phase transitions, and the Aharonov - Bohm effect. The fabricated device is demonstrated to hold a ~ 400 ion circular crystal,more » with 9 μm average spacing between ions. The task is accomplished by first characterizing undesired electric fields in the trapping volume and then designing and applying an electric field that substantially reduces the undesired fields. In addition, experimental efforts are described to reduce the motional heating rates in a surface trap by low energy in situ argon plasma treatment that reduces the amount of surface contaminants. The experiment explores the premise that carbonaceous compounds present on the surface contribute to the anomalous heating of secular motion modes in surface traps. This is a research area of fundamental interest to the ion trapping community, as heating adversely affects coherence and thus gate fidelity. The device used provides high optical laser access, substantially reducing scatter from the surface, and thus charging that may lead to excess micromotion. Heating rates for different axial mode frequencies are compared before and after plasma treatment. The presence of a carbon source near the plasma prevents making a conclusion on the observed absence of change in heating rates.« less

Multichannel-quantum-defect-theory treatment of preionized and predissociated triplet gerade levels of H2

NASA Astrophysics Data System (ADS)

Matzkin, A.; Jungen, Ch.; Ross, S. C.

2000-12-01

Multichannel quantum defect theory (MQDT) is used to calculate highly excited predissociated and preionized triplet gerade states of H2. The treatment is ab initio and is based on the clamped-nuclei quantum-defect matrices and dipole transition moments derived from quantum-chemical potential energy curves by Ross et al. [Can. J. Phys. (to be published)]. Level positions, predissociation or preionization widths and relative intensities are found to be in good agreement with those observed by Lembo et al. [Phys. Rev. A 38, 3447 (1988); J. Chem. Phys. 92, 2219 (1990)] by an optical-optical double resonance photoionization or depletion technique.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE PAGES

Gul, R.; Roy, U. N.; Camarda, G. S.; ...

2017-03-28

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; Camarda, G. S.

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Spins and photons: connecting quantum registers in diamond

NASA Astrophysics Data System (ADS)

Childress, Lily

2012-06-01

Long-lived electronic and nuclear spin states have made the nitrogen-vacancy (NV) defect in diamond a leading candidate for quantum information processing in the solid state. Multi-qubit quantum registers formed by single defects and nearby nuclear spins can currently be controlled and detected with high fidelity. Nevertheless, development of coherent connections between distant NVs remains an outstanding challenge. One advantage to working with solid-state defects is the opportunity to integrate them with microfabricated mechanical, electronic, or optical devices; in principle, such devices could mediate interactions between registers, turning them into nodes within a larger quantum network. In the last few months, several experiments have made key steps toward realizing a coherent quantum interface between individual NV centers using a mechanical quantum bus [1] or optical channels [2,3]. This talk will explore the current state of the art, and report on recent observation of two photon quantum interference between different gate-tunable defect centers [2]. These results pave the way towards measurement-based entanglement between remote NV centers and the realization of quantum networks with solid-state spins.[4pt] [1] Kolkowitz et al., Science 335, 1603 (2012)[2] Bernien et al., Phys. Rev. Lett. 108, 043604 (2012)[3] Sipahigil et al., http://lanl.arxiv.org/abs/1112.3975

Quantum transport with long-range steps on Watts-Strogatz networks

NASA Astrophysics Data System (ADS)

Wang, Yan; Xu, Xin-Jian

2016-07-01

We study transport dynamics of quantum systems with long-range steps on the Watts-Strogatz network (WSN) which is generated by rewiring links of the regular ring. First, we probe physical systems modeled by the discrete nonlinear schrödinger (DNLS) equation. Using the localized initial condition, we compute the time-averaged occupation probability of the initial site, which is related to the nonlinearity, the long-range steps and rewiring links. Self-trapping transitions occur at large (small) nonlinear parameters for coupling ɛ=-1 (1), as long-range interactions are intensified. The structure disorder induced by random rewiring, however, has dual effects for ɛ=-1 and inhibits the self-trapping behavior for ɛ=1. Second, we investigate continuous-time quantum walks (CTQW) on the regular ring ruled by the discrete linear schrödinger (DLS) equation. It is found that only the presence of the long-range steps does not affect the efficiency of the coherent exciton transport, while only the allowance of random rewiring enhances the partial localization. If both factors are considered simultaneously, localization is greatly strengthened, and the transport becomes worse.

Hidden Linear Quantum States in Proteins: Did Davydov Get the Sign Wrong?

NASA Astrophysics Data System (ADS)

Austin, Robert; Xie, Aihua; Redlich, Britta; van der Meer, Lex

A fair amount of time has been spent hunting down one prospective quantum mechanical model, namely the Davydov solition along the α-helix backbone of the protein. These experiments were challenging, we used a tunable ps mid-IR Free Electron Laser to try and observe the long-term (microsecond or greater) trapping of coherent excitation in proteins which had been proposed by a several theorists. These experiments were successful in the sense that we directly observed vibrational excited state population relaxation on the picsecond time scale, and transfer of coherent excitation into the incoherent themal bath: but we we did not see the trapping on the microsecond time scale of short (ps) coherent light pulses in the amide I band of a generic alpha-helix rich protein, myoglobin. However, we would like to revisit that experiment one more time in this paper to analyze and try to understand something puzzling that we did observe, in the context a possible unusual ``hidden'' quantum phenomena in proteins which probably is of no biological consequences, but bears re-examination.

Electronic and Optical Properties of Core/Shell Pb16X16/Cd52X52 (X =S, Se, Te) Quantum Dots

NASA Astrophysics Data System (ADS)

Tamukong, Patrick; Mayo, Michael; Kilina, Svetlana

2015-03-01

The electronic and optoelectronic properties of semiconductor quantum dots (QDs) are mediated by surface defects due to the presence of dangling bonds producing trap states within the HOMO-LUMO energy gap, and contributing to fluorescence quenching. Surface capping ligands are generally used to alleviate this problem and increase the quantum yields of QDs. An alternative way is to synthesize core-shell QD structures; i.e., a QD core with a shell of another semiconductor material. We have investigated the effects of Cd52X52 shells on the photoexcited dynamics of Pb16X16 (X =S, Se, Te) QDs. The thin (~ 0.50 nm) shells were found to result largely in type I core/shell structures and a blue shift of the absorption spectra. Our studies revealed fairly strong core-shell hybridization in the electronic states close to the conduction band (CB) edge for Pb16S16andPb16Se16 cores, whereas for the Pb16Te16 core, such CB states were largely shell-like in nature. Nonadiabatic DFT-based dynamics, coupled with the surface hopping method, was used to study the effects of the core and shell compositions on energy relaxation rates in these systems.

High-performance solar cells with induced crystallization of perovskite by an evenly distributed CdSe quantum dots seed-mediated underlayer

NASA Astrophysics Data System (ADS)

Qi, Jiabin; Xiong, Hao; Wang, Gang; Xie, Huaqing; Jia, Wei; Zhang, Qinghong; Li, Yaogang; Wang, Hongzhi

2018-02-01

Crystallization and interface engineering of perovskite are the most important factors in achieving high-performance perovskite solar cells (PSCs). Herein, we construct an ultrathin CdSe quantum dots (QDs) underlayer via a solution-processable method, which acts as a seed-mediated layer for perfect perovskite film, with both uniform morphology and better absorption capacity. In addition, CdSe QDs and perovskites form a fully crystalline heterojunction, which is beneficial to minimizing the defect and trap densities. Then, an Ostwald ripening process is adopted to fabricate large-grain, pinhole-free perovskite thin film, by a simple methylammonium bromide treatment. Besides, the first principle is applied in calculating organic/inorganic hybrid perovskite, confirming that electrons can move even quicker and more effectively, as a result of our work. Due to these treatments, representing a very simple method to simultaneously control perovskite crystallization and optimize the interfaces in PSCs, a maximum power conversion efficiency of 15.68% is achieved, 35% higher than the PSC both without CdSe and MABr treatment (11.57%), indicating better performance.

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cipro, R.; Gorbenko, V.; Univ. Grenoble Alpes, F-38000, France CEA-LETI, MINATEC Campus, F-38054 Grenoble

2014-06-30

Metal organic chemical vapor deposition of GaAs, InGaAs, and AlGaAs on nominal 300 mm Si(100) at temperatures below 550 °C was studied using the selective aspect ratio trapping method. We clearly show that growing directly GaAs on a flat Si surface in a SiO{sub 2} cavity with an aspect ratio as low as 1.3 is efficient to completely annihilate the anti-phase boundary domains. InGaAs quantum wells were grown on a GaAs buffer and exhibit room temperature micro-photoluminescence. Cathodoluminescence reveals the presence of dark spots which could be associated with the presence of emerging dislocation in a direction parallel to the cavity. Themore » InGaAs layers obtained with no antiphase boundaries are perfect candidates for being integrated as channels in n-type metal oxide semiconductor field effect transistor (MOSFET), while the low temperatures used allow the co-integration of p-type MOSFET.« less

Electron trapping in the photo-induced conductivity decay in GaAs/SnO2 heterostructure

NASA Astrophysics Data System (ADS)

de Freitas Bueno, Cristina; de Andrade Scalvi, Luis Vicente

2018-06-01

The decay of photo-induced conductivity is measured for GaAs/SnO2 heterostructure, after illumination with appropriate wavelength. The top oxide layer is deposited by sol-gel-dip-coating and doped with Eu3+, and the GaAs bottom layer is deposited by resistive evaporation. It shows quite unusual behavior since the decay rate gets slower as the temperature is raised. The trapping by intrabandgap defects in the SnO2 top layer is expected, but a GaAs/SnO2 interface arrest becomes also evident, mainly for temperatures below 100 K. Concerning the SnO2 layer, trapping by different defects is possible, due to the observed distinct capture time range. Besides Eu3+ centers and oxygen vacancies, this sort of heterostructure also leads to Eu3+ agglomerate areas in the SnO2 top layer surface, which may contribute for electron scattering. The electrical behavior reported here aims to contribute for the understanding of the electrical transport mechanisms which, combined with emission from Eu3+ ions from the top layer of the heterostructure, opens new possibilities for optoelectronic devices because samples in the form of films are desirable for circuit integration. The modeling of the photo-induced decay data yields the capture barrier in the range 620-660 meV, and contributes for the defect rules on the electrical properties of this heterostructure.

Theoretical Investigation of Light Transmission in a Slab Cavity via Kerr Nonlinearity of Carbon Nanotube Quantum Dot Nanostructure

NASA Astrophysics Data System (ADS)

Solookinejad, Gh.; Jabbari, M.; Sangachin, E. Ahmadi; Asadpour, S. H.

2018-01-01

In this paper, we discuss the transmission properties of weak probe laser field propagate through slab cavity with defect layer of carbon-nanotube quantum dot (CNT-QD) nanostructure. We show that due to spin-orbit coupling, the double electromagnetically induced transparency (EIT) windows appear and the giant Kerr nonlinearity of the intracavity medium can lead to manipulating of transmission coefficient of weak probe light. The thickness effect of defect layer medium has also been analyzed on transmission properties of probe laser field. Our proposed model may be useful for integrated photonics devices based on CNT-QD for applications in all-optical systems which require multiple EIT effect.

Experimental quantum compressed sensing for a seven-qubit system

PubMed Central

Riofrío, C. A.; Gross, D.; Flammia, S. T.; Monz, T.; Nigg, D.; Blatt, R.; Eisert, J.

2017-01-01

Well-controlled quantum devices with their increasing system size face a new roadblock hindering further development of quantum technologies. The effort of quantum tomography—the reconstruction of states and processes of a quantum device—scales unfavourably: state-of-the-art systems can no longer be characterized. Quantum compressed sensing mitigates this problem by reconstructing states from incomplete data. Here we present an experimental implementation of compressed tomography of a seven-qubit system—a topological colour code prepared in a trapped ion architecture. We are in the highly incomplete—127 Pauli basis measurement settings—and highly noisy—100 repetitions each—regime. Originally, compressed sensing was advocated for states with few non-zero eigenvalues. We argue that low-rank estimates are appropriate in general since statistical noise enables reliable reconstruction of only the leading eigenvectors. The remaining eigenvectors behave consistently with a random-matrix model that carries no information about the true state. PMID:28513587

Arrays of individually controlled ions suitable for two-dimensional quantum simulations

PubMed Central

Mielenz, Manuel; Kalis, Henning; Wittemer, Matthias; Hakelberg, Frederick; Warring, Ulrich; Schmied, Roman; Blain, Matthew; Maunz, Peter; Moehring, David L.; Leibfried, Dietrich; Schaetz, Tobias

2016-01-01

A precisely controlled quantum system may reveal a fundamental understanding of another, less accessible system of interest. A universal quantum computer is currently out of reach, but an analogue quantum simulator that makes relevant observables, interactions and states of a quantum model accessible could permit insight into complex dynamics. Several platforms have been suggested and proof-of-principle experiments have been conducted. Here, we operate two-dimensional arrays of three trapped ions in individually controlled harmonic wells forming equilateral triangles with side lengths 40 and 80 μm. In our approach, which is scalable to arbitrary two-dimensional lattices, we demonstrate individual control of the electronic and motional degrees of freedom, preparation of a fiducial initial state with ion motion close to the ground state, as well as a tuning of couplings between ions within experimental sequences. Our work paves the way towards a quantum simulator of two-dimensional systems designed at will. PMID:27291425

Charge Transport in Spiro-OMeTAD Investigated through Space-Charge-Limited Current Measurements

NASA Astrophysics Data System (ADS)

Röhr, Jason A.; Shi, Xingyuan; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-04-01

Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density-voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric 2 ,2',7 ,7' -tetrakis(N ,N -di-4-methoxyphenylamine)-9 ,9' -spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density-voltage curves from space-charge-limited current measurements.

Photonic and Phononic Entanglement with Hybrid Species Ion Chains

NASA Astrophysics Data System (ADS)

Crocker, Clayton; Lichtman, Martin; Sosnova, Ksenia; Nguyen, Tuan; Carter, Allison; Inlek, Volkan; Ruth, Hanna; Monroe, Christopher

2017-04-01

Trapped atomic ions represent a leading platform for quantum information networks due to their long coherence times and diverse set of entangling operations. External fields can drive strong local entangling interactions via phonons, and remote qubits can be entangled via emitted photons. Unfortunately, resonant light from the photonic entanglement process can disrupt nearby memory qubits. We resolve this crosstalk by introducing a separate atomic species to the trap for use as a photonic entanglement qubit. We report successful demonstration of both entangling gates between the mixed species qubit pair through their collective motion, and entanglement between our remote entanglement qubit and emitted visible photons. We additionally report our progress on a new trapping apparatus that was implemented to improve these operations to a level required for scaling up the system size. This work is supported by the ARO with funding from the IARPA LogiQ program, the AFOSR, the ARO MURI on Modular Quantum Circuits, the AFOSR MURI on Quantum Transduction, and the ARL Center for Distributed Quantum Information.

Galilean symmetry in a noncommutative gravitational quantum well

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Anirban

2010-06-15

A thorough analysis of Galilean symmetries for the gravitational well problem on a noncommutative plane is presented. A complete closure of the one-parameter centrally extended Galilean algebra is realized for the model. This implies that the field theoretic model constructed to describe noncommutative gravitational quantum well in [A. Saha, Eur. Phys. J. C 51, 199 (2007).] is indeed independent of the coordinate choice. Hence the energy spectrum predicted by the model can be associated with the experimental results to establish the upper bound on a time-space noncommutative parameter. Interestingly, noncommutativity is shown to increase the gravitational pull on the neutronmore » trapped in the gravitational well.« less

Defect production in nonlinear quench across a quantum critical point.

PubMed

Sen, Diptiman; Sengupta, K; Mondal, Shreyoshi

2008-07-04

We show that the defect density n, for a slow nonlinear power-law quench with a rate tau(-1) and an exponent alpha>0, which takes the system through a critical point characterized by correlation length and dynamical critical exponents nu and z, scales as n approximately tau(-alphanud/(alphaznu+1)) [n approximately (alphag((alpha-1)/alpha)/tau)(nud/(znu+1))] if the quench takes the system across the critical point at time t=0 [t=t(0) not = 0], where g is a nonuniversal constant and d is the system dimension. These scaling laws constitute the first theoretical results for defect production in nonlinear quenches across quantum critical points and reproduce their well-known counterpart for a linear quench (alpha=1) as a special case. We supplement our results with numerical studies of well-known models and suggest experiments to test our theory.

Quantum metrology with a single spin-3/2 defect in silicon carbide

NASA Astrophysics Data System (ADS)

Soykal, Oney O.; Reinecke, Thomas L.

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using the novel features of semiconductor high half-spin multiplet defects with easy-to-implement optical detection protocols. To achieve this, we use the spin- 3 / 2 silicon monovacancy deep center in hexagonal silicon carbide based on our rigorous derivation of this defect's ground state and of its electronic and optical properties. For a single VSi- defect, we obtain magnetic field sensitivities capable of detecting individual nuclear magnetic moments. We also show that its zero-field splitting has an exceptional strain and temperature sensitivity within the technologically desirable near-infrared window of biological systems. Other point defects, i.e. 3d transition metal or rare-earth impurities in semiconductors, may also provide similar opportunities in quantum sensing due to their similar high spin (S >= 3 / 2) configurations. This work was supported in part by ONR and by the Office of Secretary of Defense, Quantum Science and Engineering Program.

Fast quantum logic gates with trapped-ion qubits

NASA Astrophysics Data System (ADS)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

Fast quantum logic gates with trapped-ion qubits.

PubMed

Schäfer, V M; Ballance, C J; Thirumalai, K; Stephenson, L J; Ballance, T G; Steane, A M; Lucas, D M

2018-02-28

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural 'speed limit' of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds-less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

Nonextensive statistical mechanics approach to electron trapping in degenerate plasmas

NASA Astrophysics Data System (ADS)

Mebrouk, Khireddine; Gougam, Leila Ait; Tribeche, Mouloud

2016-06-01

The electron trapping in a weakly nondegenerate plasma is reformulated and re-examined by incorporating the nonextensive entropy prescription. Using the q-deformed Fermi-Dirac distribution function including the quantum as well as the nonextensive statistical effects, we derive a new generalized electron density with a new contribution proportional to the electron temperature T, which may dominate the usual thermal correction (∼T2) at very low temperatures. To make the physics behind the effect of this new contribution more transparent, we analyze the modifications arising in the propagation of ion-acoustic solitary waves. Interestingly, we find that due to the nonextensive correction, our plasma model allows the possibility of existence of quantum ion-acoustic solitons with velocity higher than the Fermi ion-sound velocity. Moreover, as the nonextensive parameter q increases, the critical temperature Tc beyond which coexistence of compressive and rarefactive solitons sets in, is shifted towards higher values.

Time-Resolved Photoluminescence Spectroscopy Of The Carrier Dynamics In GaAs/AlxGa1-xAs Quantum Wells

NASA Astrophysics Data System (ADS)

Polland, Hans J.; Kuhl, Jurgen; Gobel, Ernst O.

1988-08-01

Picosecond photoluminescence experiments at low temperature (6K) have been employed to study the trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells for different shapes of the AlxGai_xAs confinement layers. We have obtained the following results by analyzing the spectral and temporal distribution of the photoluminescence after picosecond pulse excitation: Trapping efficiency is ==, 40% for a standard ungraded cladding layer (A10.3G1.7As with constant band gap and 5nm thick wells) but increases to ,-, 60% and 100% for samp es with a spatially parabolic or linear band gap profile of the confinement layers, respectively. Trapping times are appreciably shorter than the luminescence risetime which is between 60ps to 100ps. Thus carrier trapping does not impose severe limitations on the modulation speed of single quantum well devices up to frequencies in the order of 10GHz. Similar results are obtained for a well with a width of 1.2nm. Inhomogeneities in the carrier trapping mechanism due to well width fluctuations are not observed in our samples. In the second part we describe the photoluminescence properties of GaAs/A1,Gai_x As quantum wells (x=0.3) under the influence of electric fields perpendicular to the layers. We observe a drastic red shift and a concomitant strong increase of the electron-hole recombination lifetime for well widths > lOnm due to the quantum-confined Stark effect. At high fields (50-100kV/cm) field ionization due to tunneling leads to a decrease of both the photoluminescence yield and decay time, in accordance with a simple WKB theory

Clues from defect photochemistry

NASA Astrophysics Data System (ADS)

De Angelis, Filippo; Petrozza, Annamaria

2018-05-01

Charge carriers in metal halide perovskites seem to be only marginally affected by defect-related trap states. Filippo De Angelis and Annamaria Petrozza suggest that the key to this behaviour lies in the redox chemistry of halide defects.

Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures

NASA Astrophysics Data System (ADS)

Wahyuono, Ruri Agung; Hermann-Westendorf, Felix; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Plentz, Jonathan; Schulz, Martin; Presselt, Martin; Seyring, Martin; Rettenmeyer, Markus; Dietzek, Benjamin

2017-02-01

Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.

First-principles Investigation of the Structure, Mobility and Optical Properties of Self-Trapped Excitons in Alkali Metal, Lanthanum and Barium Halide Scintillators

NASA Astrophysics Data System (ADS)

Bizarri, Gregory; Del Ben, Mauro; Bourret, Edith; Canning, Andrew

The performance of new and improved materials for gamma ray scintillator detectors is dependant on multiple factors such as quantum efficiency, energy transport etc. In halide scintillator materials the energy transport is often impacted by self-trapped exciton (STE) formation and mobility. We present first-principles calculations at the hybrid density functional theory level for the structure, mobility and optical properties of STEs and their associated lattice defects (VK centers) in two important families of scintillator materials, alkali metal and lanthanum halides (AX and LaX). AX and LaX have been extensively characterized by experiments and serve as benchmark systems to assess the accuracy of our theoretical procedure. We show that hydrid functionals accurately predict the different types of self-trapped excitons (on and off-center) found in AX and LX materials in agreement with EPR experiments. We then applied this approach to perform preliminary studies on classes of new scintillator materials including the barium mixed halides and compared with our new experimental results. These studies have the potential to benefit the development of improved scintillator materials tailored for specific applications. This work is supported by the U.S. Department of Energy/NNSA/DNN R&D and is carried out at Lawrence Berkeley National Laboratory under Contract No. AC02-05CH11231.

Positron lifetime studies of defect structures in Ba(1-x)K(x)BiO3

NASA Astrophysics Data System (ADS)

Obrien, J. C.; Howell, R. H.; Radousky, H. B.; Sterne, P. A.; Hinks, D. G.; Folkerts, T. J.; Shelton, R. N.

1990-12-01

Temperature-dependent positron lifetime experiments have been performed from room temperature to cryogenic temperatures on Ba(1-x)K(x)BiO3, for x = 0.4 and 0.5. From the temperature dependence of the positron lifetime in the normal state, we observe a clear signature of competition between separate defect populations to trap the positron. Theoretical calculations of lifetimes of free or trapped positrons have been performed on Ba(1-x)K(x)BiO3, to help identify these defects. Lifetime measurements separated by long times have been performed and evidence of aging effects in the sample defect populations is seen in these materials.

Positron annihilation studies of vacancy related defects in ceramic and thin film Pb(Zr,Ti)O3 materials

NASA Astrophysics Data System (ADS)

Keeble, D. J.; Krishnan, A.; Umlor, M. T.; Lynn, K. G.; Warren, W. L.; Dimos, D.; Tuttle, B. A.

Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O3 (PZT) materials have been completed. This paper examines effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films, and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.

Circuit quantum acoustodynamics with surface acoustic waves.

PubMed

Manenti, Riccardo; Kockum, Anton F; Patterson, Andrew; Behrle, Tanja; Rahamim, Joseph; Tancredi, Giovanna; Nori, Franco; Leek, Peter J

2017-10-17

The experimental investigation of quantum devices incorporating mechanical resonators has opened up new frontiers in the study of quantum mechanics at a macroscopic level. It has recently been shown that surface acoustic waves (SAWs) can be piezoelectrically coupled to superconducting qubits, and confined in high-quality Fabry-Perot cavities in the quantum regime. Here we present measurements of a device in which a superconducting qubit is coupled to a SAW cavity, realising a surface acoustic version of cavity quantum electrodynamics. We use measurements of the AC Stark shift between the two systems to determine the coupling strength, which is in agreement with a theoretical model. This quantum acoustodynamics architecture may be used to develop new quantum acoustic devices in which quantum information is stored in trapped on-chip acoustic wavepackets, and manipulated in ways that are impossible with purely electromagnetic signals, due to the 10 5 times slower mechanical waves.In this work, Manenti et al. present measurements of a device in which a tuneable transmon qubit is piezoelectrically coupled to a surface acoustic wave cavity, realising circuit quantum acoustodynamic architecture. This may be used to develop new quantum acoustic devices.

Intersecting surface defects and instanton partition functions

NASA Astrophysics Data System (ADS)

Pan, Yiwen; Peelaers, Wolfger

2017-07-01

We analyze intersecting surface defects inserted in interacting four-dimensional N=2 supersymmetric quantum field theories. We employ the realization of a class of such systems as the infrared fixed points of renormalization group flows from larger theories, triggered by perturbed Seiberg-Witten monopole-like configurations, to compute their partition functions. These results are cast into the form of a partition function of 4d/2d/0d coupled systems. Our computations provide concrete expressions for the instanton partition function in the presence of intersecting defects and we study the corresponding ADHM model.

Solution to the satisfiability problem using a complete Grover search with trapped ions

NASA Astrophysics Data System (ADS)

Yang, Wan-Li; Wei, Hua; Zhou, Fei; Chang, Weng-Long; Feng, Mang

2009-07-01

The main idea in the original Grover search (1997 Phys. Rev. Lett. 79 325) is to single out a target state containing the solution to a search problem by amplifying the amplitude of the state, following the Oracle's job, i.e., a black box giving us information about the target state. We design quantum circuits to accomplish a complete Grover search involving both the Oracle's job and the amplification of the target state, which are employed to solve satisfiability (SAT) problems. We explore how to carry out the quantum circuits with currently available ion-trap quantum computing technology.

Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

NASA Astrophysics Data System (ADS)

Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

2018-02-01

Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

Studies of Point Defects and Defect Interactions in Metals Using Perturbed Gamma Gamma Angular Correlations

NASA Astrophysics Data System (ADS)

Shropshire, Steven Leslie

Point defects in plastically deformed Au, Pt, and Ni were studied with atomic-scale sensitivity using the perturbed gamma-gamma angular correlations (PAC) technique by monitoring formation and transformation of complexes of vacancy defects with very dilute ^{111}In/ ^{111}Cd solute probes. Three topics were investigated: (1) Production of vacancy defects during plastic deformation of Au was investigated to differentiate models of defect production. Concentrations of mono-, di-, and tri-vacancy species were measured in Au, and the ratio of mono- to di-vacancies was found to be independent of the amount of deformation. Results indicate that point defects are produced in correlated lattice locations, such as in "strings", as a consequence of dislocation interactions and not at random locations. (2) Hydrogen interactions with vacancy-solute complexes were studied in Pt. From thermal detrapping experiments, binding of hydrogen in complexes with mono-, di- and tri-vacancies was determined using a model for hydrogen diffusing in a medium with traps, with enthalpies all measured in the narrow range 0.23-0.28 eV, proving that the binding is insensitive to the precise structure of small vacancy clusters. Nuclear relaxation of the probe in a trivacancy complex in Pt was studied as a function of temperature, from which an activation energy of 0.34 eV was measured. This value is inconsistent with relaxation caused by diffusion or trapping of hydrogen, but explainable by dynamical hopping of the PAC probe atom in a cage of vacancies. (3) By observing transformations between vacancy-solute complexes induced by annihilation reactions, it was demonstrated that interstitials are produced during plastic deformation. The evolution of concentrations of the different vacancy complexes under an interstitial flux was measured and analyzed using a kinetic-rate model, from which interstitial capture cross-sections for the different vacancy complexes and the relative quantities of interstitial species in the flux were determined. Deformation of Au was found to produce only mono- and di-interstitial fluxes in a 1:2 ratio. Cross-sections increased rapidly with the number of vacancies, which is attributed to the amount of relaxation of lattice strains around solute-vacancy complexes.

Transport of triplet excitons along continuous 100 nm polyfluorene chains

DOE PAGES

Xi, Liang; Bird, Matthew; Mauro, Gina; ...

2014-12-03

Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trappedmore » triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 µs timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into “segments,” perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 µs. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a result, a second set of polyfluorenes with 2-butyloctyl side chains was found to have a much lower completeness of end capping.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xi, Liang; Bird, Matthew; Mauro, Gina

Triplet excitons created in poly-2,7-(9,9-dihexyl)fluorene (pF) chains with end trap groups in solution are efficiently transported to and captured by the end groups. The triplets explore the entire lengths of the chains, even for ~100 nm long chains enabling determination of the completeness of end capping. The results show that the chains continuous: they may contain transient barriers or traps, such as those from fluctuations of dihedral angles, but are free of major defects that stop motion of the triplets. Quantitative determinations are aided by the addition of a strong electron donor, TMPD, which removes absorption bands of the end-trappedmore » triplets. For chains having at least one end trap, triplet capture is quantitative on the 1 µs timescale imposed by the use of the donor. Fractions of chains having no end traps were 0.15 for pF samples with anthraquinone (AQ) end traps and 0.063 with naphthylimide (NI) end traps. These determinations agreed with measurements by NMR for short (<40 polymer repeat units (PRU)) chains, where NMR determinations are accurate. The results find no evidence for traps or barriers to transport of triplets, and places limits on the possible presence of defects as impenetrable barriers to less than one per 300 PRU. The present results present a paradigm different from the current consensus, derived from observations of singlet excitons, that conjugated chains are divided into “segments,” perhaps by some kind of defects. For the present pF chains, the segmentation either does not apply to triplet excitons or is transient so that the defects are healed or surmounted in times much shorter than 1 µs. Triplets on chains without end trap groups transfer to chains with end traps on a slower time scale. Rate constants for these bimolecular triplet transfer reactions were found to increase with the length of the accepting chain, as did rate constants for triplet transfer to the chains from small molecules like biphenyl. As a result, a second set of polyfluorenes with 2-butyloctyl side chains was found to have a much lower completeness of end capping.« less

Microtraps for neutral atoms using superconducting structures in the critical state

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emmert, A.; Brune, M.; Raimond, J.-M.

Recently demonstrated superconducting atom chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the trapping structures. For type-II superconductors, this distribution is hysteretic in the critical state due to the partial penetration of the magnetic field in the thin superconducting film through pinned vortices. We report here an experimental observation of this memory effect. Our results are in good agreement with the predictions of the Bean model of the critical state without adjustable parameters. The memory effect allows to write and store permanentmore » currents in micron-sized superconducting structures and paves the way toward engineered trapping potentials.« less

Progress towards a rapidly rotating ultracold Fermi gas

NASA Astrophysics Data System (ADS)

Hu, Ming-Guang; van de Graaff, Michael; Cornell, Eric; Jin, Deborah

2015-05-01

We are designing an experiment with the goal of creating a rapidly rotating ultracold Fermi gas, which is promising system in which to study quantum Hall physics. We propose to use selective evaporation of a gas that has been initialized with a modest rotation rate to increase the angular momentum per particle in order to reach rapid rotation. We have performed simulations of this evaporation process for a model optical trap potential. Achieving rapid rotation will require a very smooth, very harmonic, and dynamically variable optical trap. We plan to use a setup consisting of two acousto-optical modulators to ``paint'' an optical dipole trapping potential that can be made smooth, radially symmetric, and harmonic. This project is supported by NSF, NIST, NASA.

Coherence properties of nanofiber-trapped cesium atoms.

PubMed

Reitz, D; Sayrin, C; Mitsch, R; Schneeweiss, P; Rauschenbeutel, A

2013-06-14

We experimentally study the ground state coherence properties of cesium atoms in a nanofiber-based two-color dipole trap, localized ∼ 200 nm away from the fiber surface. Using microwave radiation to coherently drive the clock transition, we record Ramsey fringes as well as spin echo signals and infer a reversible dephasing time of T(2)(*) = 0.6 ms and an irreversible dephasing time of T(2)(') = 3.7 ms. By modeling the signals, we find that, for our experimental parameters, T(2)(*) and T(2)(') are limited by the finite initial temperature of the atomic ensemble and the heating rate, respectively. Our results represent a fundamental step towards establishing nanofiber-based traps for cold atoms as a building block in an optical fiber quantum network.

Microfabricated Microwave-Integrated Surface Ion Trap

NASA Astrophysics Data System (ADS)

Revelle, Melissa C.; Blain, Matthew G.; Haltli, Raymond A.; Hollowell, Andrew E.; Nordquist, Christopher D.; Maunz, Peter

2017-04-01

Quantum information processing holds the key to solving computational problems that are intractable with classical computers. Trapped ions are a physical realization of a quantum information system in which qubits are encoded in hyperfine energy states. Coupling the qubit states to ion motion, as needed for two-qubit gates, is typically accomplished using Raman laser beams. Alternatively, this coupling can be achieved with strong microwave gradient fields. While microwave radiation is easier to control than a laser, it is challenging to precisely engineer the radiated microwave field. Taking advantage of Sandia's microfabrication techniques, we created a surface ion trap with integrated microwave electrodes with sub-wavelength dimensions. This multi-layered device permits co-location of the microwave antennae and the ion trap electrodes to create localized microwave gradient fields and necessary trapping fields. Here, we characterize the trap design and present simulated microwave performance with progress towards experimental results. This research was funded, in part, by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA).

Intrinsic defects and spectral characteristics of SrZrO3 perovskite

NASA Astrophysics Data System (ADS)

Li, Zhenzhang; Duan, He; Jin, Yahong; Zhang, Shaoan; Lv, Yang; Xu, Qinfang; Hu, Yihua

2018-04-01

First-principles calculations and experiment analysis were performed to study the internal relation between seven types of intrinsic defects and the persistent luminescence in SrZrO3 host material. The calculation shows that rich zirconium defects have the low energy cost and thus are easy to form. Zr vacancies are too high energy to play any role in defect which is related luminescence phenomenon of SrZrO3 phosphor. However, oxygen vacancies stand out as a likely candidate, because it can yield two carrier reservoirs: a fully-occupied singlet electron's reservoir which lies above the valence band maximum, and an empty triply degenerate hole's reservoir which is just below the conduction band minimum. Sr vacancies are not directly relevant to the persistent luminescence due to its too shallow electron trap level. The characteristics of these defects are fully explained by the equilibrium properties of SrZrO3. An experimental study of the thermoluminescence glow for these defects is conducted and the calculation is consistent with the experimental results. A mechanism of the persistent luminescence for SrZrO3:Pr3+, Eu3+ is explained according to oxygen vacancies trap center. Findings of this study may serve as theoretical references for controlling intrinsic traps by more refined experiments.

Information measures for a local quantum phase transition: Lattice fermions in a one-dimensional harmonic trap

NASA Astrophysics Data System (ADS)

Zhang, Yicheng; Vidmar, Lev; Rigol, Marcos

2018-02-01

We use quantum information measures to study the local quantum phase transition that occurs for trapped spinless fermions in one-dimensional lattices. We focus on the case of a harmonic confinement. The transition occurs upon increasing the characteristic density and results in the formation of a band-insulating domain in the center of the trap. We show that the ground-state bipartite entanglement entropy can be used as an order parameter to characterize this local quantum phase transition. We also study excited eigenstates by calculating the average von Neumann and second Renyi eigenstate entanglement entropies, and compare the results with the thermodynamic entropy and the mutual information of thermal states at the same energy density. While at low temperatures we observe a linear increase of the thermodynamic entropy with temperature at all characteristic densities, the average eigenstate entanglement entropies exhibit a strikingly different behavior as functions of temperature below and above the transition. They are linear in temperature below the transition but exhibit activated behavior above it. Hence, at nonvanishing energy densities above the ground state, the average eigenstate entanglement entropies carry fingerprints of the local quantum phase transition.

Detecting trap states in planar PbS colloidal quantum dot solar cells

PubMed Central

Jin, Zhiwen; Wang, Aiji; Zhou, Qing; Wang, Yinshu; Wang, Jizheng

2016-01-01

The recently developed planar architecture (ITO/ZnO/PbS-TBAI/PbS-EDT/Au) has greatly improved the power conversion efficiency of colloidal quantum dot photovoltaics (QDPVs). However, the performance is still far below the theoretical expectations and trap states in the PbS-TBAI film are believed to be the major origin, characterization and understanding of the traps are highly demanded to develop strategies for continued performance improvement. Here employing impedance spectroscopy we detect trap states in the planar PbS QDPVs. We determined a trap state of about 0.34 eV below the conduction band with a density of around 3.2 × 1016 cm−3 eV−1. Temperature dependent open-circuit voltage analysis, temperature dependent diode property analysis and temperature dependent build-in potential analysis consistently denotes an below-bandgap activation energy of about 1.17–1.20 eV. PMID:27845392

Towards Non-Equilibrium Dynamics with Trapped Ions

NASA Astrophysics Data System (ADS)

Silbert, Ariel; Jubin, Sierra; Doret, Charlie

2016-05-01

Atomic systems are superbly suited to the study of non-equilibrium dynamics. These systems' exquisite isolation from environmental perturbations leads to long relaxation times that enable exploration of far-from-equilibrium phenomena. One example of particular relevance to experiments in trapped ion quantum information processing, metrology, and precision spectroscopy is the approach to thermal equilibrium of sympathetically cooled linear ion chains. Suitable manipulation of experimental parameters permits exploration of the quantum-to-classical crossover between ballistic transport and diffusive, Fourier's Law conduction, a topic of interest not only to the trapped ion community but also for the development of microelectronic devices and other nanoscale structures. We present progress towards trapping chains of multiple co-trapped calcium isotopes geared towards measuring thermal equilibration and discuss plans for future experiments in non-equilibrium statistical mechanics. This work is supported by Cottrell College Science Award from the Research Corporation for Science Advancement and by Williams College.

Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

2017-09-01

Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

Molecular dynamics in an optical trap of glutamate receptors labeled with quantum-dots on living neurons

NASA Astrophysics Data System (ADS)

Kishimoto, Tatsunori; Maezawa, Yasuyo; Kudoh, Suguru N.; Taguchi, Takahisa; Hosokawa, Chie

2017-04-01

Molecular dynamics of glutamate receptor, which is major neurotransmitter receptor at excitatory synapse located on neuron, is essential for synaptic plasticity in the complex neuronal networks. Here we studied molecular dynamics in an optical trap of AMPA-type glutamate receptor (AMPAR) labeled with quantum-dot (QD) on living neuronal cells with fluorescence imaging and fluorescence correlation spectroscopy (FCS). When a 1064-nm laser beam for optical trapping was focused on QD-AMPARs located on neuronal cells, the fluorescence intensity of QD-AMPARs gradually increased at the focal spot. Using single-particle tracking of QD-AMPARs on neurons, the average diffusion coefficient decreased in an optical trap. Moreover, the decay time obtained from FCS analysis increased with the laser power and the initial assembling state of AMPARs depended on culturing day, suggesting that the motion of QD-AMPAR was constrained in an optical trap.

Quantum interference between two phonon paths and reduced heat transport in diamond lattice with atomic-scale planar defects

NASA Astrophysics Data System (ADS)

Kosevich, Yu. A.; Strelnikov, I. A.

2018-02-01

Destructive quantum interference between the waves propagating through laterally inhomogeneous layer can result in their total reflection, which in turn reduces energy flux carried by these waves. We consider the systems of Ge atoms, which fully or partly, in the chequer-wise order, fill a crystal plane in diamond-like Si lattice. We have revealed that a single type of the atomic defects, which are placed in identical positions in different unit cells in the defect crystal plane, can result in double transmission antiresonances of phonon wave packets. This new effect we relate with the complex structure of the diamond-like unit cell, which comprises two atoms in different positions and results in two distinct vibration resonances in two interfering phonon paths. We also consider the propagation of phonon wave packets in the superlatticies made of the defect planes, half-filled in the chequer-wise order with Ge atoms. We have revealed relatively broad phonon stop bands with center frequencies at the transmission antiresonances. We elaborate the equivalent analytical quasi-1D lattice model of the two phonon paths through the complex planar defect in the diamond-like lattice and describe the reduction of phonon heat transfer through the atomic-scale planar defects.

Degradation mechanisms in high-power multi-mode InGaAs-AlGaAs strained quantum well lasers for high-reliability applications

NASA Astrophysics Data System (ADS)

Sin, Yongkun; Presser, Nathan; Brodie, Miles; Lingley, Zachary; Foran, Brendan; Moss, Steven C.

2015-03-01

Laser diode manufacturers perform accelerated multi-cell lifetests to estimate lifetimes of lasers using an empirical model. Since state-of-the-art laser diodes typically require a long period of latency before they degrade, significant amount of stress is applied to the lasers to generate failures in relatively short test durations. A drawback of this approach is the lack of mean-time-to-failure data under intermediate and low stress conditions, leading to uncertainty in model parameters (especially optical power and current exponent) and potential overestimation of lifetimes at usage conditions. This approach is a concern especially for satellite communication systems where high reliability is required of lasers for long-term duration in the space environment. A number of groups have studied reliability and degradation processes in GaAs-based lasers, but none of these studies have yielded a reliability model based on the physics of failure. The lack of such a model is also a concern for space applications where complete understanding of degradation mechanisms is necessary. Our present study addresses the aforementioned issues by performing long-term lifetests under low stress conditions followed by failure mode analysis (FMA) and physics of failure investigation. We performed low-stress lifetests on both MBE- and MOCVD-grown broad-area InGaAs- AlGaAs strained QW lasers under ACC (automatic current control) mode to study low-stress degradation mechanisms. Our lifetests have accumulated over 36,000 test hours and FMA is performed on failures using our angle polishing technique followed by EL. This technique allows us to identify failure types by observing dark line defects through a window introduced in backside metal contacts. We also investigated degradation mechanisms in MOCVD-grown broad-area InGaAs-AlGaAs strained QW lasers using various FMA techniques. Since it is a challenge to control defect densities during the growth of laser structures, we chose to control defect densities by introducing extrinsic point defects to the laser via proton irradiation with different energies and fluences. These lasers were subsequently lifetested to study degradation processes in the lasers with different defect densities and also to study precursor signatures of failures - traps and non-radiative recombination centers (NRCs) in pre- and post-stressed lasers. Lastly, we employed focused ion beam (FIB), electron beam induced current (EBIC), and highresolution TEM (HR-TEM) techniques to further study dark line defects and dislocations in both post-aged and postproton irradiated lasers. We report on our long-term low-stress lifetest results and physics of failure investigation results.

SPECIAL ISSUE DEVOTED TO THE 80TH BIRTHDAY OF S.A. AKHMANOV: Excitation of coherent polaritons in a two-dimensional atomic lattice

NASA Astrophysics Data System (ADS)

Barinov, I. O.; Alodzhants, A. P.; Arakelyan, Sergei M.

2009-07-01

We describe a new type of spatially periodic structure (lattice models): a polaritonic crystal formed by a two-dimensional lattice of trapped two-level atoms interacting with the electromagnetic field in a cavity (or in a one-dimensional array of tunnelling-coupled microcavities), which allows polaritons to be fully localised. Using a one-dimensional polaritonic crystal as an example, we analyse conditions for quantum degeneracy of a lower-polariton gas and those for quantum optical information recording and storage.

Adiabatic Quantum Computation with Neutral Cesium

NASA Astrophysics Data System (ADS)

Hankin, Aaron; Parazzoli, L.; Chou, Chin-Wen; Jau, Yuan-Yu; Burns, George; Young, Amber; Kemme, Shanalyn; Ferdinand, Andrew; Biedermann, Grant; Landahl, Andrew; Ivan H. Deutsch Collaboration; Mark Saffman Collaboration

2013-05-01

We are implementing a new platform for adiabatic quantum computation (AQC) based on trapped neutral atoms whose coupling is mediated by the dipole-dipole interactions of Rydberg states. Ground state cesium atoms are dressed by laser fields in a manner conditional on the Rydberg blockade mechanism, thereby providing the requisite entangling interactions. As a benchmark we study a Quadratic Unconstrained Binary Optimization (QUBO) problem whose solution is found in the ground state spin configuration of an Ising-like model. University of New Mexico: Ivan H. Deutsch, Tyler Keating, Krittika Goyal.

Multiconfigurational quantum propagation with trajectory-guided generalized coherent states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigolo, Adriano, E-mail: agrigolo@ifi.unicamp.br; Aguiar, Marcus A. M. de, E-mail: aguiar@ifi.unicamp.br; Viscondi, Thiago F., E-mail: viscondi@if.usp.br

2016-03-07

A generalized version of the coupled coherent states method for coherent states of arbitrary Lie groups is developed. In contrast to the original formulation, which is restricted to frozen-Gaussian basis sets, the extended method is suitable for propagating quantum states of systems featuring diversified physical properties, such as spin degrees of freedom or particle indistinguishability. The approach is illustrated with simple models for interacting bosons trapped in double- and triple-well potentials, most adequately described in terms of SU(2) and SU(3) bosonic coherent states, respectively.

Paramagnetic defects and charge trapping behavior of ZrO2 films deposited on germanium by plasma-enhanced CVD

NASA Astrophysics Data System (ADS)

Mahata, C.; Bera, M. K.; Bose, P. K.; Maiti, C. K.

2009-02-01

Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping behavior and chemical nature of defects in ultrathin (~14 nm) high-k ZrO2 dielectric films deposited on p-Ge (1 0 0) substrates at low temperature (<200 °C) by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma at a pressure of ~65 Pa. Both the band and defect-related electron states have been characterized using electron paramagnetic resonance, internal photoemission, capacitance-voltage and current-voltage measurements under UV illumination. Capacitance-voltage and photocurrent-voltage measurements were used to determine the centroid of oxide charge within the high-k gate stack. The observed shifts in photocurrent response of the Al/ZrO2/GeO2/p-Ge metal-insulator-semiconductor (MIS) capacitors indicate the location of the centroids to be within the ZrO2 dielectric near to the gate electrode. Moreover, the measured flat band voltage and photocurrent shifts also indicate a large density of traps in the dielectric. The impact of plasma nitridation on the interfacial quality of the oxides has been investigated. Different N sources, such as NO and NH3, have been used for nitrogen engineering. Oxynitride samples show a lower defect density and trapping over the non-nitrided samples. The charge trapping and detrapping properties of MIS capacitors under stressing in constant current and voltage modes have been investigated in detail.

Exponential gain of randomness certified by quantum contextuality

NASA Astrophysics Data System (ADS)

Um, Mark; Zhang, Junhua; Wang, Ye; Wang, Pengfei; Kim, Kihwan

2017-04-01

We demonstrate the protocol of exponential gain of randomness certified by quantum contextuality in a trapped ion system. The genuine randomness can be produced by quantum principle and certified by quantum inequalities. Recently, randomness expansion protocols based on inequality of Bell-text and Kochen-Specker (KS) theorem, have been demonstrated. These schemes have been theoretically innovated to exponentially expand the randomness and amplify the randomness from weak initial random seed. Here, we report the experimental evidence of such exponential expansion of randomness. In the experiment, we use three states of a 138Ba + ion between a ground state and two quadrupole states. In the 138Ba + ion system, we do not have detection loophole and we apply a methods to rule out certain hidden variable models that obey a kind of extended noncontextuality.

Quantum turbulence in cold multicomponent matter

NASA Astrophysics Data System (ADS)

Pshenichnyuk, Ivan A.

2018-02-01

Quantum vortices are pivotal for understanding of phenomena in quantum hydrodynamics. Vortices were observed in different physical systems like trapped dilute Bose-Einstein condensates, liquid helium, exciton-polariton condensates and other types of systems. Foreign particles attached to the vortices often serve for a visualization of the vortex shape and kinematics in superfluid experiments. Fascinating discoveries were made in the field of cold quantum mixtures, where vortices created in one component may interact with the other component. This works raise the fundamental question of the interaction between quantum vortices and matter. The generalized nonlinear Schrodinger equation based formalism is applied here to model three different processes involving the interaction of quantum vortices with foreign particles: propagation of a fast classical particle in a superfluid under the influence of sound waves, scattering of a single fermion by a quantized vortex line and dynamics of vortex pairs doped with heavy bosonic matter. The obtained results allow to to clarify the details of recent experiments and acquire a better understanding of the multicomponent quantum turbulence.

Sustained State-Independent Quantum Contextual Correlations from a Single Ion

NASA Astrophysics Data System (ADS)

Leupold, F. M.; Malinowski, M.; Zhang, C.; Negnevitsky, V.; Alonso, J.; Home, J. P.; Cabello, A.

2018-05-01

We use a single trapped-ion qutrit to demonstrate the quantum-state-independent violation of noncontextuality inequalities using a sequence of randomly chosen quantum nondemolition projective measurements. We concatenate 53 ×106 sequential measurements of 13 observables, and unambiguously violate an optimal noncontextual bound. We use the same data set to characterize imperfections including signaling and repeatability of the measurements. The experimental sequence was generated in real time with a quantum random number generator integrated into our control system to select the subsequent observable with a latency below 50 μ s , which can be used to constrain contextual hidden-variable models that might describe our results. The state-recycling experimental procedure is resilient to noise and independent of the qutrit state, substantiating the fact that the contextual nature of quantum physics is connected to measurements and not necessarily to designated states. The use of extended sequences of quantum nondemolition measurements finds applications in the fields of sensing and quantum information.

Phonons in quantum solids with defects. [lattice vacancies and interstitials in solid helium and metallic hydrogen

NASA Technical Reports Server (NTRS)

Jacobi, N.; Zmuidzinas, J. S.

1974-01-01

A formalism was developed for temperature-dependent, self-consistent phonons in quantum solids with defects. Lattice vacancies and interstitials in solid helium and metallic hydrogen, as well as electronic excitations in solid helium, were treated as defects that modify properties of these systems. The information to be gained from the modified phonon spectrum is discussed.

Quantum correlation of path-entangled two-photon states in waveguide arrays with defects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, Yiling; Xu, Lei; Han, Bin

We study the quantum correlation of path-entangled states of two photons in coupled one-dimensional waveguide arrays with lattice defects. Both off-diagonal and diagonal defects are considered, which show different effects on the quantum correlation of path-entangled two-photon states. Two-photon bunching or anti-bunching effects can be observed and controlled. The two photons are found to have a tendency to bunch at the side lobes with a repulsive off-diagonal defect, and the path-entanglement of the input two-photon state can be preserved during the propagation. We also found that defect modes may play an important role on the two-photon correlation of path-entangled statesmore » in the waveguide arrays. Due to the quantum interference effect, intriguing evolution dynamics of the two-photon correlation matrix elements with oscillation frequencies being either twice of or the same as that of a classical light wave, depending on the position of the correlation matrix element, is observed. Our results show that it is possible to manipulate the two-photon correlation properties of path-entangled states in waveguide arrays with lattice defects.« less

Quantum optical emulation of molecular vibronic spectroscopy using a trapped-ion device.

PubMed

Shen, Yangchao; Lu, Yao; Zhang, Kuan; Zhang, Junhua; Zhang, Shuaining; Huh, Joonsuk; Kim, Kihwan

2018-01-28

Molecules are one of the most demanding quantum systems to be simulated by quantum computers due to their complexity and the emergent role of quantum nature. The recent theoretical proposal of Huh et al. (Nature Photon., 9, 615 (2015)) showed that a multi-photon network with a Gaussian input state can simulate a molecular spectroscopic process. Here, we present the first quantum device that generates a molecular spectroscopic signal with the phonons in a trapped ion system, using SO 2 as an example. In order to perform reliable Gaussian sampling, we develop the essential experimental technology with phonons, which includes the phase-coherent manipulation of displacement, squeezing, and rotation operations with multiple modes in a single realization. The required quantum optical operations are implemented through Raman laser beams. The molecular spectroscopic signal is reconstructed from the collective projection measurements for the two-phonon-mode. Our experimental demonstration will pave the way to large-scale molecular quantum simulations, which are classically intractable, but would be easily verifiable by real molecular spectroscopy.

Multimode Bose-Hubbard model for quantum dipolar gases in confined geometries

NASA Astrophysics Data System (ADS)

Cartarius, Florian; Minguzzi, Anna; Morigi, Giovanna

2017-06-01

We theoretically consider ultracold polar molecules in a wave guide. The particles are bosons: They experience a periodic potential due to an optical lattice oriented along the wave guide and are polarized by an electric field orthogonal to the guide axis. The array is mechanically unstable by opening the transverse confinement in the direction orthogonal to the polarizing electric field and can undergo a transition to a double-chain (zigzag) structure. For this geometry we derive a multimode generalized Bose-Hubbard model for determining the quantum phases of the gas at the mechanical instability, taking into account the quantum fluctuations in all directions of space. Our model limits the dimension of the numerically relevant Hilbert subspace by means of an appropriate decomposition of the field operator, which is obtained from a field theoretical model of the linear-zigzag instability. We determine the phase diagrams of small systems using exact diagonalization and find that, even for tight transverse confinement, the aspect ratio between the two transverse trap frequencies controls not only the classical but also the quantum properties of the ground state in a nontrivial way. Convergence tests at the linear-zigzag instability demonstrate that our multimode generalized Bose-Hubbard model can catch the essential features of the quantum phases of dipolar gases in confined geometries with a limited computational effort.

Interconversion of intrinsic defects in SrTi O3(001 )

NASA Astrophysics Data System (ADS)

Chambers, S. A.; Du, Y.; Zhu, Z.; Wang, J.; Wahila, M. J.; Piper, L. F. J.; Prakash, A.; Yue, J.; Jalan, B.; Spurgeon, S. R.; Kepaptsoglou, D. M.; Ramasse, Q. M.; Sushko, P. V.

2018-06-01

Photoemission features associated with states deep in the band gap of n -SrTi O3(001 ) are found to be ubiquitous in bulk crystals and epitaxial films. These features are present even when there is little signal near the Fermi level. Analysis reveals that these states are deep-level traps associated with defects. The commonly investigated defects—O vacancies, Sr vacancies, and aliovalent impurity cations on the Ti sites—cannot account for these features. Rather, ab initio modeling points to these states resulting from interstitial oxygen and its interaction with donor electrons.

Quantum sensing of the phase-space-displacement parameters using a single trapped ion

NASA Astrophysics Data System (ADS)

Ivanov, Peter A.; Vitanov, Nikolay V.

2018-03-01

We introduce a quantum sensing protocol for detecting the parameters characterizing the phase-space displacement by using a single trapped ion as a quantum probe. We show that, thanks to the laser-induced coupling between the ion's internal states and the motion mode, the estimation of the two conjugated parameters describing the displacement can be efficiently performed by a set of measurements of the atomic state populations. Furthermore, we introduce a three-parameter protocol capable of detecting the magnitude, the transverse direction, and the phase of the displacement. We characterize the uncertainty of the two- and three-parameter problems in terms of the Fisher information and show that state projective measurement saturates the fundamental quantum Cramér-Rao bound.

Modeling photovoltaic performance in periodic patterned colloidal quantum dot solar cells.

PubMed

Fu, Yulan; Dinku, Abay G; Hara, Yukihiro; Miller, Christopher W; Vrouwenvelder, Kristina T; Lopez, Rene

2015-07-27

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention mostly due to their wide absorption spectrum window and potentially low processability cost. The ultimate efficiency of CQD solar cells is highly limited by their high trap state density. Here we show that the overall device power conversion efficiency could be improved by employing photonic structures that enhance both charge generation and collection efficiencies. By employing a two-dimensional numerical model, we have calculated the characteristics of patterned CQD solar cells based of a simple grating structure. Our calculation predicts a power conversion efficiency as high as 11.2%, with a short circuit current density of 35.2 mA/cm2, a value nearly 1.5 times larger than the conventional flat design, showing the great potential value of patterned quantum dot solar cells.

Dirac Equation in (1 +1 )-Dimensional Curved Spacetime and the Multiphoton Quantum Rabi Model

NASA Astrophysics Data System (ADS)

Pedernales, J. S.; Beau, M.; Pittman, S. M.; Egusquiza, I. L.; Lamata, L.; Solano, E.; del Campo, A.

2018-04-01

We introduce an exact mapping between the Dirac equation in (1 +1 )-dimensional curved spacetime (DCS) and a multiphoton quantum Rabi model (QRM). A background of a (1 +1 )-dimensional black hole requires a QRM with one- and two-photon terms that can be implemented in a trapped ion for the quantum simulation of Dirac particles in curved spacetime. We illustrate our proposal with a numerical analysis of the free fall of a Dirac particle into a (1 +1 )-dimensional black hole, and find that the Zitterbewegung effect, measurable via the oscillatory trajectory of the Dirac particle, persists in the presence of gravity. From the duality between the squeezing term in the multiphoton QRM and the metric coupling in the DCS, we show that gravity generates squeezing of the Dirac particle wave function.

Millikelvin cooling of an optically trapped microsphere in vacuum

NASA Astrophysics Data System (ADS)

Li, Tongcang; Kheifets, Simon; Raizen, Mark G.

2011-07-01

Cooling of micromechanical resonators towards the quantum mechanical ground state in their centre-of-mass motion has advanced rapidly in recent years. This work is an important step towards the creation of `Schrödinger cats', quantum superpositions of macroscopic observables, and the study of their destruction by decoherence. Here we report optical trapping of glass microspheres in vacuum with high oscillation frequencies, and cooling of the centre-of-mass motion from room temperature to a minimum temperature of about 1.5mK. This new system eliminates the physical contact inherent to clamped cantilevers, and can allow ground-state cooling from room temperature. More importantly, the optical trap can be switched off, allowing a microsphere to undergo free-fall in vacuum after cooling. This is ideal for studying the gravitational state reduction, a manifestation of the apparent conflict between general relativity and quantum mechanics. A cooled optically trapped object in vacuum can also be used to search for non-Newtonian gravity forces at small scales, measure the impact of a single air molecule and even produce Schrödinger cats of living organisms.

Field-free junctions for surface electrode ion traps

NASA Astrophysics Data System (ADS)

Jordens, Robert; Schmied, R.; Blain, M. G.; Leibfried, D.; Wineland, D.

2015-05-01

Intersections between transport guides in a network of RF ion traps are a key ingredient to many implementations of scalable quantum information processing with trapped ions. Several junction architectures demonstrated so far are limited by varying radial secular frequencies, a reduced trap depth, or a non-vanishing RF field along the transport channel. We report on the design and progress in implementing a configurable microfabricated surface electrode Y-junction that employs switchable RF electrodes. An essentially RF-field-free pseudopotential guide between any two legs of the junction can be established by applying RF potential to a suitable pair of electrodes. The transport channel's height above the electrodes, its depth and radial curvature are constant to within 15%. Supported by IARPA, Sandia, NSA, ONR, and the NIST Quantum Information Program.

Quantum confinement of exciton-polaritons in a structured (Al,Ga)As microcavity

NASA Astrophysics Data System (ADS)

Kuznetsov, Alexander S.; Helgers, Paul L. J.; Biermann, Klaus; Santos, Paulo V.

2018-05-01

The realization of quantum functionalities with polaritons in an all-semiconductor platform requires the control of the energy and spatial overlap of the wave functions of single polaritons trapped in potentials with precisely controlled shape and size. In this study we reach the confinement of microcavity polaritons in traps with an effective potential width down to 1 µm, produced by patterning the active region of the (Al,Ga)As microcavity between two molecular beam epitaxy growth runs. We correlate spectroscopic and structural data to show that the smooth surface relief of the patterned traps translates into a graded confinement potential characterized by lateral interfaces with a finite lateral width. We show that the structuring method is suitable for the fabrication of arrays of proximal traps, supporting hybridization between adjacent lattice sites.

Electronic and transport properties of zigzag carbon nanotubes with the presence of periodical antidot and boron/nitride doping defects

NASA Astrophysics Data System (ADS)

Zoghi, Milad; Yazdanpanah Goharrizi, Arash; Mirjalili, Seyed Mohammad; Kabir, M. Z.

2018-06-01

Electronic and transport properties of Carbon nanotubes (CNTs) are affected by the presence of physical or chemical defects in their structures. In this paper, we present novel platforms of defected zigzag CNTs (Z-CNTs) in which two topologies of antidot and Boron/Nitride (BN) doping defects are periodically imposed throughout the length of perfect tubes. Using the tight binding model and the non-equilibrium Green’s function method, it is realized that the quantum confinement of Z-CNTs is modified by the presence of such defects. This new quantum confinement results in the appearance of mini bands and mini gaps in the transmission spectra, as well as a modified band structure and band gap size. The modified band gap could be either larger or smaller than the intrinsic band gap of a perfect tube, which is determined by the category of Z-CNT. The in-depth analysis shows that the size of the modified band gap is the function of several factors consisting of: the radii of tube (D r), the distance between adjacent defects (d d), the utilized defect topology, and the kind of defect (antidot or BN doping). Furthermore, taking advantage of the tunable band gap size of Z-CNT with the presence of periodical defects, new platforms of defect-based Z-CNT resonant tunneling diode (RTD) are proposed for the first time. Our calculations demonstrate the apparition of resonances in transmission spectra and the negative differential resistance in the I-V characteristics for such RTD platforms.

Compact modeling of total ionizing dose and aging effects in MOS technologies

DOE PAGES

Esqueda, Ivan S.; Barnaby, Hugh J.; King, Michael Patrick

2015-06-18

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimentalmore » I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.« less

Wigner Function Reconstruction in Levitated Optomechanics

NASA Astrophysics Data System (ADS)

Rashid, Muddassar; Toroš, Marko; Ulbricht, Hendrik

2017-10-01

We demonstrate the reconstruction of theWigner function from marginal distributions of the motion of a single trapped particle using homodyne detection. We show that it is possible to generate quantum states of levitated optomechanical systems even under the efect of continuous measurement by the trapping laser light. We describe the opto-mechanical coupling for the case of the particle trapped by a free-space focused laser beam, explicitly for the case without an optical cavity. We use the scheme to reconstruct the Wigner function of experimental data in perfect agreement with the expected Gaussian distribution of a thermal state of motion. This opens a route for quantum state preparation in levitated optomechanics.

Quantum annealing for the number-partitioning problem using a tunable spin glass of ions

PubMed Central

Graß, Tobias; Raventós, David; Juliá-Díaz, Bruno; Gogolin, Christian; Lewenstein, Maciej

2016-01-01

Exploiting quantum properties to outperform classical ways of information processing is an outstanding goal of modern physics. A promising route is quantum simulation, which aims at implementing relevant and computationally hard problems in controllable quantum systems. Here we demonstrate that in a trapped ion setup, with present day technology, it is possible to realize a spin model of the Mattis-type that exhibits spin glass phases. Our method produces the glassy behaviour without the need for any disorder potential, just by controlling the detuning of the spin-phonon coupling. Applying a transverse field, the system can be used to benchmark quantum annealing strategies which aim at reaching the ground state of the spin glass starting from the paramagnetic phase. In the vicinity of a phonon resonance, the problem maps onto number partitioning, and instances which are difficult to address classically can be implemented. PMID:27230802

A new approach to entangling neutral atoms.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jongmin; Martin, Michael J.; Jau, Yuan-Yu

2016-11-01

Our team has developed a new approach to entangling neutral atoms with a Rydberg-dressed interaction. Entangling neutral atoms is an essential key of quantum technologies such as quantum computation, many-body quantum simulation, and high-precision atomic sensors . The demonstrated Rydberg-dressed protocol involves adiabatically imposing a light shift on the ground state by coupling an excited Rydberg state with a tuned laser field. Using this technique, we have demonstrated a strong and tunable dipole - dipole interaction between two individually trapped atoms with energy shifts of order 1 MHz, which has been challenging to achieve in other protocols . During thismore » program, we experimentally demonstrated Bell-state entanglement and the isomorphism to the Jaynes - Cumming model of a Rydberg-dressed two-atom system. Our theoretical calculations of a CPHASE quantum logic gate and arbitrary Dicke state quantum control in this system encourage further work.« less

N multipartite GHZ states in quantum networks

NASA Astrophysics Data System (ADS)

Caprara Vivoli, Valentina; Wehner, Stephanie

Nowadays progress in experimental quantum physics has brought to a significant control on systems like nitrogen-vacancy centres, ion traps, and superconducting qubit clusters. These systems can constitute the key cells of future quantum networks, where tasks like quantum communication at large scale and quantum cryptography can be achieved. It is, though, still not clear which approaches can be used to generate such entanglement at large distances using only local operations on or between at most two adjacent nodes. Here, we analyse three protocols that are able to generate genuine multipartite entanglement between an arbitrary large number of parties. In particular, we focus on the generation of the Greenberger-Horne-Zeilinger state. Moreover, the performances of the three methods are numerically compared in the scenario of a decoherence model both in terms of fidelity and entanglement generation rate. V.C.V. is founded by a NWO Vidi Grant, and S.W. is founded by STW Netherlands.

Pauli structures arising from confined particles interacting via a statistical potential

NASA Astrophysics Data System (ADS)

Batle, Josep; Ciftja, Orion; Farouk, Ahmed; Alkhambashi, Majid; Abdalla, Soliman

2017-09-01

There have been suggestions that the Pauli exclusion principle alone can lead a non-interacting (free) system of identical fermions to form crystalline structures dubbed Pauli crystals. Single-shot imaging experiments for the case of ultra-cold systems of free spin-polarized fermionic atoms in a two-dimensional harmonic trap appear to show geometric arrangements that cannot be characterized as Wigner crystals. This work explores this idea and considers a well-known approach that enables one to treat a quantum system of free fermions as a system of classical particles interacting with a statistical interaction potential. The model under consideration, though classical in nature, incorporates the quantum statistics by endowing the classical particles with an effective interaction potential. The reasonable expectation is that possible Pauli crystal features seen in experiments may manifest in this model that captures the correct quantum statistics as a first order correction. We use the Monte Carlo simulated annealing method to obtain the most stable configurations of finite two-dimensional systems of confined particles that interact with an appropriate statistical repulsion potential. We consider both an isotropic harmonic and a hard-wall confinement potential. Despite minor differences, the most stable configurations observed in our model correspond to the reported Pauli crystals in single-shot imaging experiments of free spin-polarized fermions in a harmonic trap. The crystalline configurations observed appear to be different from the expected classical Wigner crystal structures that would emerge should the confined classical particles had interacted with a pair-wise Coulomb repulsion.

Unified Electromagnetic-Electronic Design of Light Trapping Silicon Solar Cells

PubMed Central

Boroumand, Javaneh; Das, Sonali; Vázquez-Guardado, Abraham; Franklin, Daniel; Chanda, Debashis

2016-01-01

A three-dimensional unified electromagnetic-electronic model is developed in conjunction with a light trapping scheme in order to predict and maximize combined electron-photon harvesting in ultrathin crystalline silicon solar cells. The comparison between a bare and light trapping cell shows significant enhancement in photon absorption and electron collection. The model further demonstrates that in order to achieve high energy conversion efficiency, charge separation must be optimized through control of the doping profile and surface passivation. Despite having a larger number of surface defect states caused by the surface patterning in light trapping cells, we show that the higher charge carrier generation and collection in this design compensates the absorption and recombination losses and ultimately results in an increase in energy conversion efficiency. The fundamental physics behind this specific design approach is validated through its application to a 3 μm thick functional light trapping solar cell which shows 192% efficiency enhancement with respect to the bare cell of same thickness. Such a unified design approach will pave the path towards achieving the well-known Shockley-Queisser (SQ) limit for c-Si in thin-film (<30 μm) geometries. PMID:27499446

Quantum translator-rotator: inelastic neutron scattering of dihydrogen molecules trapped inside anisotropic fullerene cages.

PubMed

Horsewill, A J; Panesar, K S; Rols, S; Johnson, M R; Murata, Y; Komatsu, K; Mamone, S; Danquigny, A; Cuda, F; Maltsev, S; Grossel, M C; Carravetta, M; Levitt, M H

2009-01-09

We report an inelastic neutron scattering investigation of the quantum dynamics of hydrogen molecules trapped inside anisotropic fullerene cages. Transitions among the manifold of quantized rotational and translational states are directly observed. The spectra recorded as a function of energy and momentum transfer are interpreted in terms of the rotational potential and the cage dimensions. The thermodynamics of orthohydrogen and parahydrogen are investigated through temperature dependence measurements.