Si-Ge Nano-Structured with Tungsten Silicide Inclusions

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

Valence Band Control of Metal Silicide Films via Stoichiometry.

PubMed

Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

2016-07-07

The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties.

Formation, structure, and orientation of gold silicide on gold surfaces

NASA Technical Reports Server (NTRS)

Green, A. K.; Bauer, E.

1976-01-01

The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

NASA Astrophysics Data System (ADS)

Geenen, F. A.; Solano, E.; Jordan-Sweet, J.; Lavoie, C.; Mocuta, C.; Detavernier, C.

2018-05-01

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both "thin" (i.e., 9 nm) and "ultra-thin" (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.

Method for forming metallic silicide films on silicon substrates by ion beam deposition

DOEpatents

Zuhr, Raymond A.; Holland, Orin W.

1990-01-01

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Fundamentals of Intrinsic Stress during Silicide Formation

NASA Astrophysics Data System (ADS)

Özçelik, A.; van Bockstael, C.; Detavernier, C.; Vanmeirhaeghe, R.

2007-04-01

Silicides are a very useful group of materials which can be used to make electrical contacts to circuits in electronic devices with an extremely high performance. The stress in thin films is an increasingly important technological issue from the standpoint of reliability and performance in IC processing. Manufacturers of micro electronic devices have to control the stress levels in the contact films to avoid device failures. Phase transitions such as silicidation or even a simple rearrangement of atoms like relaxation in the metal film cause a difference in the volume of the film from its starting value. This volume change produces stress inside the film. In this work we analyzed the stress evolution during the silicidation reaction of some metals such as W and Mo by using a home built in situ stress system at the University of Ghent.

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean

Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such asmore » the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.« less

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

PubMed

Choi, Juyun; Choi, Seongheum; Kang, Yu-Seon; Na, Sekwon; Lee, Hoo-Jeong; Cho, Mann-Ho; Kim, Hyoungsub

2014-08-27

An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Peng; Wu, Dongping, E-mail: dongpingwu@fudan.edu.cn; Kubart, Tomas

Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phasemore » formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.« less

Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh

Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated thatmore » a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.« less

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

PubMed

Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

2009-01-01

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

Texture in thin film silicides and germanides: A review

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C.

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is ofmore » utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.« less

Texture in thin film silicides and germanides: A review

NASA Astrophysics Data System (ADS)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy.more » Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.« less

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

NASA Astrophysics Data System (ADS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering.

PubMed

Gago, R; Jaafar, M; Palomares, F J

2018-07-04

The surface morphology of molybdenum silicide (Mo x Si 1-x ) films has been studied after low-energy Ar + ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si 1-x films with compositions below, equal and above the MoSi 2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si 1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si 1-x . Contrary to silicon, Mo x Si 1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si 1-x films with 1 keV Ar + at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si 1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si 1-x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In conclusion, our work provides some insights into the complex morphological evolution of compound surfaces and solid experimental evidences regarding the mechanisms behind silicide-assisted nanopatterning.

Impact of laser anneal on NiPt silicide texture and chemical composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less

Impact of laser anneal on NiPt silicide texture and chemical composition

NASA Astrophysics Data System (ADS)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

2017-06-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

NASA Astrophysics Data System (ADS)

Zollner, Stefan

2007-03-01

Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration with: P. Grudowski, D. Jawarani, R. Garcia, M.L. Kottke, R.B. Gregory, X.-D. Wang, D. Theodore, P. Fejes, W.J. Taylor, B.Y. Nguyen, C. Capasso, M. Raymond, D. Denning, K. Chang, R. Noble, M. Jahanbani, S. Bolton, P. Crabtree, D. Goedeke, M. Rossow, M. Chowdhury, H. Desjardins, A.Thean.

Cobalt silicide nanocables grown on Co films: synthesis and physical properties.

PubMed

Hsin, Cheng-Lun; Yu, Shih-Ying; Wu, Wen-Wei

2010-12-03

Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples annealed in air ambient at 900 °C for 1 h. The nanocable structure came to a clear conclusion that the thermal stability of the silicide nanowires can be resolved by the shell encapsulation. Cobalt silicide nanowires were obtained from the nanocable structure. The electrical properties of the CoSi nanowires have been found to be compatible with their thin film counterpart and a high maximum current density of the nanowires has been measured. One way to obtain silicate nanowires has been demonstrated. The silicate compound, which is composed of cobalt, silicon and oxygen, was achieved. The Co silicide/oxide nanocables are potentially useful as a key component of silicate nanowires, interconnects and magnetic units in nanoelectronics.

Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

NASA Astrophysics Data System (ADS)

Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

2015-08-01

The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

Oxidation/vaporization of silicide coated columbium base alloys

NASA Technical Reports Server (NTRS)

Kohl, F. J.; Stearns, C. A.

1971-01-01

Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

NASA Astrophysics Data System (ADS)

Gago, R.; Jaafar, M.; Palomares, F. J.

2018-07-01

The surface morphology of molybdenum silicide (Mo x Si1‑x ) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si1‑x films with compositions below, equal and above the MoSi2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si1‑x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si1‑x . Contrary to silicon, Mo x Si1‑x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si1‑x films with 1 keV Ar+ at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si1‑x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si1‑x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In conclusion, our work provides some insights into the complex morphological evolution of compound surfaces and solid experimental evidences regarding the mechanisms behind silicide-assisted nanopatterning.

Symposium Q: Magnetic Thin Films, Heterostructures, and Device Materials

DTIC Science & Technology

2007-05-22

results in the formation of sodium carboxylate groups, that electronics, also known as magnetoelectronics or spintronics. Mn promoted the adsorption of...Q8.29 Magnetic Properties of Microcrystalline Si Thin films and Nickel Silicide Nanowires. Joondong Kim’, Seongjin Jang 2 , Bi-Ching Shih 2 , Hao...Buffalo, New York. The silicides , such as NiSi 2 and CoSi2 , have been attractive materials to crystallize Si and grow an epitaxial Si film with a small

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

NASA Astrophysics Data System (ADS)

Geenen, F. A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, C.

2018-02-01

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of tc = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 ° C , thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of "thickness gradients," which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness tc. The results are discussed in the framework of classical nucleation theory.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Study of nickel silicide formation by physical vapor deposition techniques

NASA Astrophysics Data System (ADS)

Pancharatnam, Shanti

Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

PubMed

Chizh, Kirill V; Chapnin, Valery A; Kalinushkin, Victor P; Resnik, Vladimir Y; Storozhevykh, Mikhail S; Yuryev, Vladimir A

2013-04-17

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.

Development of a fused slurry silicide coating for the protection of tantalum alloys

NASA Technical Reports Server (NTRS)

Packer, C. M.; Perkins, R. A.

1974-01-01

Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

Surface morphology of erbium silicide

NASA Technical Reports Server (NTRS)

Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

1982-01-01

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com; Lavoie, Christian; Jordan-Sweet, Jean

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

Silicide surface phases on gold

NASA Technical Reports Server (NTRS)

Green, A. K.; Bauer, E.

1981-01-01

The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

Scanning tunneling microscopy measurements of the spin Hall effect in tungsten films by using iron-coated tungsten tips

NASA Astrophysics Data System (ADS)

Xie, Ting; Dreyer, Michael; Bowen, David; Hinkel, Dan; Butera, R. E.; Krafft, Charles; Mayergoyz, Isaak

2018-05-01

Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungsten film has been observed. It is argued that this asymmetry is a manifestation of the spin Hall effect in the current-carrying tungsten film. Nanoscale variations of this asymmetry across the tungsten film have been studied by using the scanning tunneling microscopy technique.

Silicide formation process of Er films with Ta and TaN capping layers.

PubMed

Choi, Juyun; Choi, Seongheum; Kim, Jungwoo; Na, Sekwon; Lee, Hoo-Jeong; Lee, Seok-Hee; Kim, Hyoungsub

2013-12-11

The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

ITEP MEVVA ion beam for rhenium silicide production.

PubMed

Kulevoy, T; Gerasimenko, N; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S; Medetov, N; Zaporozhan, O

2010-02-01

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

NASA Astrophysics Data System (ADS)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (Tgr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

PubMed Central

2013-01-01

Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

Mirrorlike pulsed laser deposited tungsten thin film.

PubMed

Mostako, A T T; Rao, C V S; Khare, Alika

2011-01-01

Mirrorlike tungsten thin films on stainless steel substrate deposited via pulsed laser deposition technique in vacuum (10(-5) Torr) is reported, which may find direct application as first mirror in fusion devices. The crystal structure of tungsten film is analyzed using x-ray diffraction pattern, surface morphology of the tungsten films is studied with scanning electron microscope and atomic force microscope. The film composition is identified using energy dispersive x-ray. The specular and diffuse reflectivities with respect to stainless steel substrate of the tungsten films are recorded with FTIR spectra. The thickness and the optical quality of pulsed laser deposition deposited films are tested via interferometric technique. The reflectivity is approaching about that of the bulk for the tungsten film of thickness ∼782 nm.

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

PubMed

Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

2013-10-01

In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

2005-06-01

Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S. K.; Mohan, S.; Bysakh, S.

The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletionmore » of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.« less

Impurity effects in transition metal silicides

NASA Technical Reports Server (NTRS)

Lien, C.-D.; Nicolet, M.-A.

1984-01-01

Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

PubMed

Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

2017-12-01

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi 2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

NMOS contact resistance reduction with selenium implant into NiPt silicide

NASA Astrophysics Data System (ADS)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Growth and characterization of α and β-phase tungsten films on various substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jeong-Seop; Cho, Jaehun; You, Chun-Yeol, E-mail: cyyou@inha.ac.kr

2016-03-15

The growth conditions of tungsten thin films were investigated using various substrates including Si, Si/SiO{sub 2}, GaAs, MgO, and Al{sub 2}O{sub 3}, and recipes were discovered for the optimal growth conditions of thick metastable β-phase tungsten films on Si, GaAs, and Al{sub 2}O{sub 3} substrates, which is an important material in spin orbit torque studies. For the Si/SiO{sub 2} substrate, the crystal phase of the tungsten films was different depending upon the tungsten film thickness, and the transport properties were found to dramatically change with the thickness owing to a change in phase from the α + β phase to the α-phase.more » It is shown that the crystal phase changes are associated with residual stress in the tungsten films and that the resistivity is closely related to the grain sizes.« less

Development of Coatings for Tantalum Alloy Nozzle Vanes

NASA Technical Reports Server (NTRS)

Stetson, A. R.; Wimber, R. T.

1967-01-01

A group of silicide coatings developed for the T222 tantalum-base alloy have afforded over 600 hours of protection at 1600 and 2400 F during cyclic exposure in air. These coatings were applied in two steps. A modifier alloy was applied by slurry techniques and was sintered in vacuum prior to siliciding by pack cementation in argon. Application of the modifier alloy by pack cementation was found to be much less effective. The addition of titanium and vanadium to molybdenum and tungsten yielded beneficial modifier alloys, whereas the addition of chromium showed no improvement. After siliciding, the 15Ti- 35W-15V-35Mo modifier alloy exhibited the best performance; one sample survived 1064 hours of oxidation at 2400 F. This same coating was the only coating to reproducibly provide 600 hours of protection at both 1600 and 2400 F; in the second and third of three experiments, involving oxidation of three to five specimens at each temperature in each experiment, no failures were observed in 600 hours of testing. The slurry coatings were also shown to protect the Cb752 and D43 columbium-base alloys.

Controlled assembly of graphene-capped nickel, cobalt and iron silicides

PubMed Central

Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

2013-01-01

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved. PMID:23835625

Effect of interfacial interactions on the thermal conductivity and interfacial thermal conductance in tungsten–graphene layered structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jagannadham, K., E-mail: jag-kasichainula@ncsu.edu

2014-09-01

Graphene film was deposited by microwave plasma assisted deposition on polished oxygen free high conductivity copper foils. Tungsten–graphene layered film was formed by deposition of tungsten film by magnetron sputtering on the graphene covered copper foils. Tungsten film was also deposited directly on copper foil without graphene as the intermediate film. The tungsten–graphene–copper samples were heated at different temperatures up to 900 °C in argon atmosphere to form an interfacial tungsten carbide film. Tungsten film deposited on thicker graphene platelets dispersed on silicon wafer was also heated at 900 °C to identify the formation of tungsten carbide film by reaction of tungstenmore » with graphene platelets. The films were characterized by scanning electron microscopy, Raman spectroscopy, and x-ray diffraction. It was found that tungsten carbide film formed at the interface upon heating only above 650 °C. Transient thermoreflectance signal from the tungsten film surface on the samples was collected and modeled using one-dimensional heat equation. The experimental and modeled results showed that the presence of graphene at the interface reduced the cross-plane effective thermal conductivity and the interfacial thermal conductance of the layer structure. Heating at 650 and 900 °C in argon further reduced the cross-plane thermal conductivity and interface thermal conductance as a result of formation nanocrystalline tungsten carbide at the interface leading to separation and formation of voids. The present results emphasize that interfacial interactions between graphene and carbide forming bcc and hcp elements will reduce the cross-plane effective thermal conductivity in composites.« less

Multifunctional Ceramic Nanostructured Coatings

DTIC Science & Technology

2010-12-01

silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on

Sputtered Thin Film Research

DTIC Science & Technology

1974-11-01

yield (100) oriented wafers, which were lapped and chemi-mechanically polished in sulf uric-peroxide or sodium hypochlorite etches. Prior to mounting...This material will viot oxidize, melt, or diffuse during the subsequent high temperature processing. Platinum silicide contacts are used because...formation of the platinum silicide contacts, the gate region was opened and the wafer was placed in the sput- tering chamber. The same deposition

A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

NASA Astrophysics Data System (ADS)

Takaloo, Ashkan Vakilipour; Joo, Seung Ki; Es, Firat; Turan, Rasit; Lee, Doo Won

2018-03-01

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 mΩ.cm2 was obtained.

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion

PubMed Central

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems. PMID:24994964

Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion.

PubMed

Noh, Jin-Seo

2014-01-01

Aluminum silicide microparticles with oxidized rough surfaces were formed on Si substrates through a spontaneous granulation process of Al films. This microparticle formation was caused by interdiffusion of Al and Si atoms at hypoeutectic temperatures of Al-Si systems, which was driven by compressive stress stored in Al films. The size, density, and the composition of the microparticles could be controlled by adjusting the annealing temperature, time, and the film thickness. High-density microparticles of a size around 10 μm and with an atomic ratio of Si/Al of approximately 0.8 were obtained when a 90-nm-thick Al film on Si substrate was annealed for 9 h at 550°C. The microparticle formation resulted in a rapid increase of the sheet resistance, which is a consequence of substantial consumption of Al film. This simple route to size- and composition-controllable microparticle formation may lay a foundation stone for the thermoelectric study on Al-Si alloy-based heterogeneous systems.

Work function characterization of solution-processed cobalt silicide

DOE PAGES

Ullah, Syed Shihab; Robinson, Matt; Hoey, Justin; ...

2012-05-08

Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

An XPS study of the adherence of refractory carbide, silicide, and boride RF-sputtered wear-resistant coatings. [X-ray Photoelectron Spectroscopy of steel surfaces

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

Radio frequency sputtering was used to deposit refractory carbide, silicide, and boride coatings on 440-C steel substrates. Both sputter etched and pre-oxidized substrates were used and the films were deposited with and without a substrate bias. The composition of the coatings was determined as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. Friction and wear tests were conducted to evaluate coating adherence. In the interfacial region there was evidence that bias may produce a graded interface for some compounds. Biasing, while generally improving bulk film stoichiometry, can adversely affect adherence by removing interfacial oxide layers. Oxides of all film constituents except carbon and iron were present in all cases but the iron oxide coverage was only complete on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 films. In the case of mixed oxides, preoxidation enhanced film adherence. In the layered case it did not.

Direct Growth of Crystalline Tungsten Oxide Nanorod Arrays by a Hydrothermal Process and Their Electrochromic Properties

NASA Astrophysics Data System (ADS)

Lu, Chih-Hao; Hon, Min Hsiung; Leu, Ing-Chi

2017-04-01

Transparent crystalline tungsten oxide nanorod arrays for use as an electrochromic layer have been directly prepared on fluorine-doped tin oxide-coated glass via a facile tungsten film-assisted hydrothermal process using aqueous tungsten hexachloride solution. X-ray diffraction analysis and field-emission scanning electron microscopy were used to characterize the phase and morphology of the grown nanostructures. Arrays of tungsten oxide nanorods with diameter of ˜22 nm and length of ˜240 nm were obtained at 200°C after 8 h of hydrothermal reaction. We propose a growth mechanism for the deposition of the monoclinic tungsten oxide phase in the hydrothermal environment. The tungsten film was first oxidized to tungsten oxide to provide seed sites for crystal growth and address the poor connection between the growing tungsten oxide and substrate. Aligned tungsten oxide nanorod arrays can be grown by a W thin film-assisted heterogeneous nucleation process with NaCl as a structure-directing agent. The fabricated electrochromic device demonstrated optical modulation (coloration/bleaching) at 632.8 nm of ˜41.2% after applying a low voltage of 0.1 V for 10 s, indicating the potential of such nanorod array films for use in energy-saving smart windows.

Contacts to Semiconductor Nanowires

DTIC Science & Technology

2009-10-03

SiNW diameters and the amount of metal deposited, or alternatively, the atomic ratio between Pt and Si. The uniformity of the silicided NWs was...program. The Schottky contact is a metal silicide formed by rapid thermal annealing of the deposited contact metal . The θ- Ni2Si/n-Si NW Schottky...decision. unless so designated by other documentation. 14. ABSTRACT Metal contacts to semiconductor nanowires share similarities with their thin-film

Long-Wavelength Infrared Surface Plasmons on Ga-Doped ZnO Films Excited via 2D Hole Arrays for Extraordinary Optical Transmission (Preprint)

DTIC Science & Technology

2013-10-01

Express 1, 1090-1099 (2011). [16] Soref, R., Peale, R. E., and Buchwald, W., “Longwave plasmonics on doped silicon and silicides ,” Opt. Express 16, 6507...Soref, R., Drehman, A., and Buchwald, W.R., “IR permittivities for silicides and doped silicon,” J. Opt. Soc. Am. B 27, 730-734 (2010). [19] Ginn

The effect of high-power plasma flows on tungsten plates with multilayer films of tungsten nanoparticles

NASA Astrophysics Data System (ADS)

Gorokhov, M. V.; Kozhevin, V. M.; Yavsin, D. A.; Voronin, A. V.; Gurevich, S. A.

2017-04-01

We have experimentally studied the action of high-power plasma flows on pure tungsten plates covered with multilayer films of tungsten nanoparticles formed by the method of laser electrodeposition. The samples were irradiated using a plasma gun producing hydrogen (helium) plasma flows with power density up to 35 GW/cm2. The resulting surface morphology was studied by scanning electron microscopy (SEM). SEM data showed that tungsten plates coated by nanoparticles are more resistant to the formation of microcracks than are pure tungsten plates.

Interaction of metal layers with polycrystalline Si

NASA Technical Reports Server (NTRS)

Nakamura, K.; Olowolafe, J. O.; Lau, S. S.; Nicolet, M.-A.; Mayer, J. W.; Shima, R.

1976-01-01

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Measurement of uptake and release of tritium by tungsten

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakayama, M.; Torikai, Y.; Saito, M.

2015-03-15

Tungsten is currently contemplated as plasma facing material for the divertor of future fusion machines. In this paper the uptake of tritium by tungsten and its release behavior have been investigated. Tungsten samples have been annealed at various temperatures and loaded at also different temperatures with deuterium containing 7.2 % tritium at a pressure of 1.2 kPa. A specific system was designed to assess the release of tritiated water and molecular tritium by the samples. Due to the rather low solubility of hydrogen isotopes in tungsten it is particularly important to be aware of the presence of hydrogen traps ormore » thin oxide films. As shown in this work, traps or oxide films may affect the retention capability of tungsten and lead to significantly modified release properties. It became clear that there were capture sites that had different thermal stability and different capture intensity in tungsten after polishing, or oxide films that were grown on the surface of tungsten and had barrier effects.« less

Process Of Bonding Copper And Tungsten

DOEpatents

Slattery, Kevin T.; Driemeyer, Daniel E.; Davis, John W.

2000-07-18

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Tungsten-rhenium thin film thermocouples for SiC-based ceramic matrix composites

NASA Astrophysics Data System (ADS)

Tian, Bian; Zhang, Zhongkai; Shi, Peng; Zheng, Chen; Yu, Qiuyue; Jing, Weixuan; Jiang, Zhuangde

2017-01-01

A tungsten-rhenium thin film thermocouple is designed and fabricated, depending on the principle of thermal-electric effect caused by the high temperature. The characteristics of thin film thermocouples in different temperatures are investigated via numerical analysis and analog simulation. The working mechanism and thermo-electric features of the thermocouples are analyzed depending on the simulation results. Then the thin film thermocouples are fabricated and calibrated. The calibration results show that the thin film thermocouples based on the tungsten-rhenium material achieve ideal static characteristics and work well in the practical applications.

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Capping of rare earth silicide nanowires on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Appelfeller, Stephan; Franz, Martin; Kubicki, Milan

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain duemore » to the lattice mismatch between the Si overlayer and the nanowires.« less

Combined effect of Pt and W alloying elements on Ni-silicide formation

NASA Astrophysics Data System (ADS)

Luo, T.; Mangelinck, D.; Descoins, M.; Bertoglio, M.; Mouaici, N.; Hallén, A.; Girardeaux, C.

2018-03-01

A combinatorial study of the combined effect of Pt and W on Ni silicide formation is performed. Ni(Pt, W) films with thickness and composition gradients were prepared by a co-deposition composition spread technique using sputtering deposition from Pt, W, and Ni targets. The deposited Ni(Pt,W) films were characterized by X-ray diffraction, X-ray reflectivity, Rutherford backscattering, and atom probe tomography. The maximum content of alloying elements is close to 27 at. %. Simulations of the thickness and composition were carried out and compared with experimental results. In situ X-ray diffraction and atom probe tomography were used to study the phase formation. Both additive alloying elements (Pt + W) slow down the Ni consumption and the effect of W is more pronounced than the one of Pt. Regarding the effect of alloying elements on Ni silicides formation, three regions could be distinguished in the Ni(Pt,W)/Si wafer. For the region close to the Ni target, the low contents of alloying elements (Pt + W) have little impact on the phase sequence (δ-Ni2Si is the first silicide and NiSi forms when Ni is entirely consumed) but the kinetics of silicide formation slows down. The region close to the Pt target has high contents of (Pt + W) and is rich in Pt and a simultaneous phase formation of δ-Ni2Si and NiSi is observed. For the high (Pt + W) contents and W-rich region, NiSi forms unexpectedly before δ-Ni2Si and the subsequent growth of δ-Ni2Si is accompanied by the NiSi consumption. When Ni is entirely consumed, NiSi regrows at the expense of δ-Ni2Si.

Process Of Bonding Copper And Tungsten

DOEpatents

Slattery, Kevin T.; Driemeyer, Daniel E.

1999-11-23

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Enhanced spin–orbit torques by oxygen incorporation in tungsten films

PubMed Central

Demasius, Kai-Uwe; Phung, Timothy; Zhang, Weifeng; Hughes, Brian P.; Yang, See-Hun; Kellock, Andrew; Han, Wei; Pushp, Aakash; Parkin, Stuart S. P.

2016-01-01

The origin of spin–orbit torques, which are generated by the conversion of charge-to-spin currents in non-magnetic materials, is of considerable debate. One of the most interesting materials is tungsten, for which large spin–orbit torques have been found in thin films that are stabilized in the A15 (β-phase) structure. Here we report large spin Hall angles of up to approximately –0.5 by incorporating oxygen into tungsten. While the incorporation of oxygen into the tungsten films leads to significant changes in their microstructure and electrical resistivity, the large spin Hall angles measured are found to be remarkably insensitive to the oxygen-doping level (12–44%). The invariance of the spin Hall angle for higher oxygen concentrations with the bulk properties of the films suggests that the spin–orbit torques in this system may originate dominantly from the interface rather than from the interior of the films. PMID:26912203

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, X. X.; Wu, Y. Z.; Mu, B.; Qiao, L.; Li, W. X.; Li, J. J.; Wang, P.

2017-03-01

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W2N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W2N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W2N phase was negligible. The complete decomposition of W2N film happened as the temperature reached up to 1473 K.

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarpi, B.; Daineche, R.; Girardeaux, C.

Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicidemore » interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.« less

Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

NASA Astrophysics Data System (ADS)

Naftel, S. J.; Coulthard, I.; Sham, T. K.; Xu, D.-X.; Erickson, L.; Das, S. R.

1999-05-01

We report a Ni and Si L3,2-edge x-ray absorption near edge structures (XANES) study of nickel-silicon interaction in submicron (0.15 and 0.2 μm) lines on a n-Si(100) wafer as well as a series of well characterized Ni-Si blanket films. XANES measurements recorded in both total electron yield and soft x-ray fluorescence yield indicate that under the selected silicidation conditions, the more desirable low resistivity phase, NiSi, is indeed the dominant phase in the subhalf-micron lines although the formation of this phase is less complete as the line becomes narrower and this is accompanied by a Ni rich surface.

The formation of magnetic silicide Fe3Si clusters during ion implantation

NASA Astrophysics Data System (ADS)

Balakirev, N.; Zhikharev, V.; Gumarov, G.

2014-05-01

A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

PubMed

Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

2015-07-10

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

Transport Measurements and Synchrotron-Based X-Ray Absorption Spectroscopy of Iron Silicon Germanide Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Elmarhoumi, Nader; Cottier, Ryan; Merchan, Greg; Roy, Amitava; Lohn, Chris; Geisler, Heike; Ventrice, Carl, Jr.; Golding, Terry

2009-03-01

Some of the iron-based metal silicide and germanide phases have been predicted to be direct band gap semiconductors. Therefore, they show promise for use as optoelectronic materials. We have used synchrotron-based x-ray absorption spectroscopy to study the structure of iron silicon germanide films grown by molecular beam epitaxy. A series of Fe(Si1-xGex)2 thin films (2000 -- 8000å) with a nominal Ge concentration of up to x = 0.04 have been grown. X-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) measurements have been performed on the films. The nearest neighbor co-ordination corresponding to the β-FeSi2 phase of iron silicide provides the best fit with the EXAFS data. Temperature dependent (20 < T < 350 K) magneto transport measurements were done on the Fe(Si1-xGex)2 thin films via Van Der Paw (VDP) Hall configuration using a 0.5-1T magnetic field and a current of 10-200 μA through indium ohmic contacts, the Hall coefficient was calculated. Results suggest semiconducting behavior of the films which is consistent with the EXAFS results.

X-ray spectroscopy study of electronic structure of laser-irradiated Au nanoparticles in a silica film

NASA Astrophysics Data System (ADS)

Jonnard, P.; Bercegol, H.; Lamaignère, L.; Morreeuw, J.-P.; Rullier, J.-L.; Cottancin, E.; Pellarin, M.

2005-03-01

The electronic structure of gold nanoparticles embedded in a silica film is studied, both before and after irradiation at 355nm by a laser. The Au 5d occupied valence states are observed by x-ray emission spectroscopy. They show that before irradiation the gold atoms are in metallic states within the nanoparticles. After irradiation with a fluence of 0.5J/cm2, it is found that gold valence states are close to those of a metal-poor gold silicide; thanks to a comparison of the experimental Au 5d states with the calculated ones for gold silicides using the density-functional theory. The formation of such a compound is driven by the diffusion of the gold atoms into the silica film upon the laser irradiation. At higher fluence, 1J/cm2, we find a higher percentage of metallic gold that could be attributed to annealing in the silica matrix.

Real-time and post-plasma studies of influence of low levels of tungsten on carbon erosion and surface evolution behaviour in D2 plasma

NASA Astrophysics Data System (ADS)

Weilnboeck, F.; Fox-Lyon, N.; Oehrlein, G. S.; Doerner, R. P.

2010-02-01

A profound influence of monolayer tungsten coverage of hard carbon films on the evolution of carbon surface erosion behaviour, surface chemistry and morphology in D2 plasma has been established by real-time ellipsometry, x-ray photoelectron spectroscopy and atomic force microscopy measurements. The erosion of tungsten-covered carbon showed two distinct stages of plasma material interactions: rapid tungsten removal during the initial erosion period and steady-state amorphous carbon removal accompanied by large-scale surface roughness development. The initial removal of tungsten takes place at a rate that significantly exceeds typical sputter yields at the ion energies used here and is attributed to elimination of weakly bonded tungsten from the surface. The tungsten remaining on the a-C : H film surface causes surface roughness development of the eroding carbon surface by a masking effect, and simultaneously leads to a seven fold reduction of the steady-state carbon erosion rate for long plasma surface interaction times (~100 s). Results presented are of direct relevance for material transport and re-deposition, and the interaction of those films with plasma in the divertor region and on mirror surfaces of fusion devices.

Microstructure, optical, and electrochromic properties of sol-gel nanoporous tungsten oxide films

NASA Astrophysics Data System (ADS)

Djaoued, Yahia; Ashrit, P. V.; Badilescu, S.; Bruning, R.

2003-08-01

Porous tungsten oxide films have been prepared by a nonhydrolitic sol-gel method using poly(ethylene glycol) (PEG) as a structure directing agent. The method entails the hydrolysis of an ethanolic solution of tungsten ethoxide (formed by the reaction of WCl6 with ethanol) followed by condensation and polymerization at the PEG-tungsten oxide oligometers interface. A highly porous WO3 framework was obtained after PEG was burned off by calcination at a relativley low temperature. AFM images of the films treated thermally show an ordered material rather than microscopic particulates. Both fibrilar nanostructures and striped phase can be obtained via this approach, depending on the concentration of PEG in the coating solution. XRD data from the fibrils indicate that they are crystalline with very small crystals, whereas the striped phases obtained with 20% PEG correspond to two crystalline phases, one, the stoichiometric WO3 and the other one an oxygen deficient phase, containing larger crystals (~28 nm). The results show that PEG promotes the formation of oxygen deficient phases and delays crystallization. Compared to WO3 with no PEG, the optical and electrochromic properties of the macroporous tungsten oxide films appear to be significantly improved. The formation of organized nanostructures is tentatively accounted for by the strong hydrogen bonding interactions between PEG and the tungsten oxide oligomers.

Effect of tungsten implantation on the switching parameters in V2O5 films

NASA Astrophysics Data System (ADS)

Burdyukh, S. V.; Berezina, O. Ya.; Pergament, A. L.

2017-11-01

The paper examines the effect of doping with tungsten on switching in hydrated vanadium pentoxide films. The switching effect is associated with the metal-insulator transition in a vanadium dioxide channel that forms in the initial film due to the process of electrical forming (EF). Doping is carried out by the plasma immersion ion implantation method. It is shown that implanting small tungsten doses improves the switching parameters after EF. When implanting large doses, switching is observed without EF, and if EF is applied, the switching effect, on the contrary, disappears.

Microstructural and wear properties of sputtered carbides and silicides

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling-element bearing tests were also performed with these sputtered films.

The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

DTIC Science & Technology

2016-02-01

BST barium strontium titanate εr dielectric constant MIM metal /insulator/ metal MOSD metal organic spin deposition PtSi platinum silicide RF...improvement. In addition, BST films processed via solution metal organic spin deposition, which yield a lower dielectric range of 150–335, also...layers. This report details how we used solution and physical deposition to fabricate thin films via radio frequency (RF) sputtering and metal

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

PubMed

Halpern, Jeffrey M; Martin, Heidi B

2014-02-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp 2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes

PubMed Central

Halpern, Jeffrey M.; Martin, Heidi B.

2014-01-01

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes. PMID:25404788

Assembling tungsten oxide hydrate nanocrystal colloids formed by laser ablation in liquid into fast-response electrochromic films.

PubMed

Wang, Shalong; Dou, Kang; Zou, Yousheng; Dong, Yuhang; Li, Jubin; Ju, Dan; Zeng, Haibo

2017-03-01

High-performance electrochromic films based on tungsten oxide hydrate ([WO 2 (O 2 )H 2 O]·1.66H 2 O) colloidal nanocrystals with fast switching speed were fabricated by laser ablation in a mixture of water and hydrogen peroxide followed by electrophoretic methods. Through electrophoretic deposition, the nanoparticles in the colloids synthesized by laser ablation aggregated onto the FTO coated glass substrate forming a lager cell with a uniform size of around 200nm, which subsequently self-assembled into a porous tungsten oxide hydrate film. By optimizing the electrophoretic time (800s) and voltage (-0.5V), the mesh-like porous tungsten oxide hydrate film achieved a wide optical modulation of 32% at 632nm, fast coloration and bleaching response speed of 7.8 s and 1.7s respectively due to the synergetic effect of the unique atomic structure of [WO 2 (O 2 )H 2 O]·1.66H 2 O and porous structure with large surface area that facilitates the ion insertion/extraction. Thus the tungsten oxide hydrate can be a promising electrochromic material for practical applications. Copyright © 2016 Elsevier Inc. All rights reserved.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy.

PubMed

Zou, Zhi-Qiang; Sun, Li-Min; Shi, Gao-Ming; Liu, Xiao-Yong; Li, Xu

2013-12-05

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (-0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (-0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

PubMed Central

2013-01-01

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (−0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (−0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers. PMID:24305438

Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4.

PubMed

Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

2016-02-28

We formed Si-rich W silicide films composed of Sin clusters, each of which encapsulates a W atom (WSi(n) clusters with 8 < n ≤ ∼ 12), by using a gas-phase reaction between WF6 and SiH4 in a hot-wall reactor. The hydrogenated WSi(n)H(x) clusters with reduced F concentration were synthesized in a heated gas phase and subsequently deposited on a substrate heated to 350-420 °C, where they dehydrogenated and coalesced into the film. Under a gas pressure of SiH4 high enough for the WSi(n)H(x) reactant to collide a sufficient number of times with SiH4 molecules before reaching the substrate, the resulting film was composed of WSi(n) clusters with a uniform n, which was determined by the gas temperature. The formed films were amorphous semiconductors with an optical gap of ∼0.8-1.5 eV and an electrical mobility gap of ∼0.05-0.12 eV, both of which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.

Solid-state reaction of iron on β-SiC

NASA Astrophysics Data System (ADS)

Kaplan, R.; Klein, P. H.; Addamiano, A.

1985-07-01

The solid-state reaction between Fe and β-SiC has been studied using Auger-electron and electron-energy-loss spectroscopies and ion sputter profiling. Fe films from submonolayer coverage to 1000 Å thickness were grown in ultrahigh vacuum, and annealed at temperatures up to 550 °C. Auger line-shape changes occurred even for initial Fe coverage at 190 °C, indicating substantial bond alteration in the SiC substrate. A 1000-Å film was largely consumed by reaction with Si and C diffused from the substrate during a 500 °C anneal, and exhibited both Fe silicide and carbide throughout most of its original volume and free C present as graphite primarily at the surface. As an aid in identifying the reaction products studied in this work, Auger line shapes were first determined for the SiLVV peak in Fe silicide and for the CKLL transition in Fe carbide.

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

New oxidation-resistant tungsten alloys for use in the nuclear fusion reactors

NASA Astrophysics Data System (ADS)

Litnovsky, A.; Wegener, T.; Klein, F.; Linsmeier, Ch; Rasinski, M.; Kreter, A.; Tan, X.; Schmitz, J.; Coenen, J. W.; Mao, Y.; Gonzalez-Julian, J.; Bram, M.

2017-12-01

Smart tungsten-based alloys are under development as plasma-facing components for a future fusion power plant. Smart alloys are planned to adjust their properties depending on environmental conditions: acting as a sputter-resistant plasma-facing material during plasma operation and suppressing the sublimation of radioactive tungsten oxide in case of an accident on the power plant. New smart alloys containing yttrium are presently in the focus of research. Thin film smart alloys are featuring an remarkable 105-fold suppression of mass increase due to an oxidation as compared to that of pure tungsten at 1000 °C. Newly developed bulk smart tungsten alloys feature even better oxidation resistance compared to that of thin films. First plasma test of smart alloys under DEMO-relevant conditions revealed the same mass removal as for pure tungsten due to sputtering by plasma ions. Exposed smart alloy samples demonstrate the superior oxidation performance as compared to tungsten-chromium-titanium systems developed earlier.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

NASA Astrophysics Data System (ADS)

Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael

We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.

Deuterium retention in tungsten in dependence of the surface conditions

NASA Astrophysics Data System (ADS)

Ogorodnikova, O. V.; Roth, J.; Mayer, M.

2003-03-01

The paper reviews hydrogen isotope retention and migration in tungsten (W). Due to a large scatter of the deuterium (D) retention database, new measurements of ion-driven D retention in polycrystalline W foil have been performed to clarify the mechanism of hydrogen isotope inventory in W. Deuterium retention has been investigated as a function of ion fluence, implantation temperature, incident energy and surface conditions. Special attention has been given on the investigation of D retention in thin films of tungsten carbide and tungsten oxide which can be formed on W surface in a fusion device. Such kinds of films increase the D retention in W. Several points are reviewed: (i) inventory in pure W, (ii) inventory in W pre-implanted by carbon ions and (iii) inventory in tungsten oxide.

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta 1-x Al x N y Films for Cu Diffusion Barrier Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consiglio, S.; Dey, S.; Yu, K.

2016-01-01

Ultrathin TaN and Ta 1-xAl xN y films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3Si formation and determine the effective activation energy (E a) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (Tmore » c) for Cu silicidation. The Ea values of Cu 3Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the Ea of Cu 3Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase.« less

A slow positron beam generator for lifetime studies

NASA Technical Reports Server (NTRS)

Singh, Jag J.; Eftekhari, Abe; St.clair, Terry L.

1989-01-01

A slow positron beam generator using well-annealed polycrystalline tungsten moderators and a Na-22 positron source was developed. A 250 micro c source, deposited on a 2.54 micron thick aluminized mylar, is sandwiched between two (2.54 cm x 2.54 cm x 0.0127 cm) tungsten pieces. Two (2.54 cm x 2.54 cm x t cm) test polymer films insulate the two tungsten moderator pieces from the aluminized mylar source holder (t=0.00127 to 0.0127). A potential difference of 10 to 100 volts--depending on the test polymer film thickness (t)--is applied between the tungsten pieces and the source foil. Thermalized positrons diffusing out of the moderator pieces are attracted to the source foil held at an appropriate potential below the moderator pieces. These positrons have to pass through the test polymer films before they can reach the source foil. The potential difference between the moderator pieces and the aluminized mylar is so adjusted as to force the positrons to stop in the test polymer films. Thus the new generator becomes an effective source of positrons for assaying thin polymer films for their molecular morphology.

Tungsten nitride coatings obtained by HiPIMS as plasma facing materials for fusion applications

NASA Astrophysics Data System (ADS)

Tiron, Vasile; Velicu, Ioana-Laura; Porosnicu, Corneliu; Burducea, Ion; Dinca, Paul; Malinský, Petr

2017-09-01

In this work, tungsten nitride coatings with nitrogen content in the range of 19-50 at% were prepared by reactive multi-pulse high power impulse magnetron sputtering as a function of the argon and nitrogen mixture and further exposed to a deuterium plasma jet. The elemental composition, morphological properties and physical structure of the samples were investigated by Rutherford backscattering spectrometry, atomic force microscopy and X-ray diffraction. Deuterium implantation was performed using a deuterium plasma jet and its retention in nitrogen containing tungsten films was investigated using thermal desorption spectrometry. Deuterium retention and release behaviour strongly depend on the nitrogen content in the coatings and the films microstructure. All nitride coatings have a polycrystalline structure and retain a lower deuterium level than the pure tungsten sample. Nitrogen content in the films acts as a diffusion barrier for deuterium and leads to a higher desorption temperature, therefore to a higher binding energy.

Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.

2016-01-15

In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecularmore » or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.« less

Tungsten oxide thin film exposed to low energy D and He plasma: evidence for a thermal enhancement of the erosion yield

NASA Astrophysics Data System (ADS)

Hijazi, Hussein; Martin, C.; Roubin, P.; Addab, Y.; Cabie, C.; Pardanaud, C.; Bannister, M.; Meyer, F.

2017-10-01

Nanocrystalline tungsten oxide thin films (25 nm - 250 nm thickness) produced by thermal oxidation of a tungsten substrate were exposed to low energy D and He plasma. Low energy D plasma exposure (11 eV/D+) of these films have resulted in the formation of a tungsten bronze (DxWO3) clearly observed by Raman microscopy. D plasma bombardment (4 1021 m-2) has also induced a color change of the oxide layer which is similar to the well-known electro-chromic effect and has been named ``plasma-chromic effect''. To unravel physical and chemical origins of the modifications observed under exposure, similar tungsten oxide films were also exposed to low energy helium plasma (20 eV/He+) . Due to the low fluence (4 1021 m-2) and low ion energy (20 eV), at room temperature, He exposure has induced only very few morphological and structural modifications. On the contrary, at 673 K, significant erosion is observed, which gives evidence for an unexpected thermal enhancement of the erosion yield. We present here new results concerning He beam exposures at low fluence (4 1021 m-2) varying the He+ energy from 20 eV to 320 eV to measure the tungsten oxide sputtering threshold energy. Detailed analyses before/after exposure to describe the D and He interaction with the oxide layer, its erosion and structural modification at the atomic and micrometer scale will be presented.

Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

DTIC Science & Technology

2014-03-27

scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs

Preparation and evaluation of thin-film sodium tungsten bronzes

NASA Technical Reports Server (NTRS)

Kautz, H. E.; Fielder, W. L.; Singer, J.; Fordyce, J. S.

1974-01-01

Thin films of sodium tungsten bronze (NaxWO3) were investigated as reversible sodium ion electrodes for solid electrolytes. The films were made by electron beam evaporation of the three phases, W metal, Na2WO4, and WO3, followed by sintering. The substrates were sodium beta alumina disks and glass slides. X-ray diffraction analyses of the films showed that sintering in dry nitrogen with prior exposure to air lead to mixed phases. Sintering in vacuum with no air exposure produced tetragonal I bronze with a nominal composition of Na0.31WO3, single phase within the limits of X-ray diffraction detectability. The films were uniform and adherent on sodium beta alumina substrates. The ac and dc conductivities of the beta alumina were measured with the sodium tungsten bronze films as electrodes. These experiments indicated that the tetragonal I bronze electrodes were not completely reversible. This may have resulted from sodium ion blocking within the bronze film or at the bronze beta alumina interface. Methods for attempting to make more completely reversible electrodes are suggested.

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

2017-10-01

High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Studies on nickel-tungsten oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usha, K. S.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-10-15

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created duemore » to the addition of tungsten, respectively.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturingmore » of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.« less

Development of porous metal oxide thin films by co-evaporation

NASA Astrophysics Data System (ADS)

Tesfamichael, T.; Motta, Nunzio; Bostrom, Thor; Bell, J. M.

2007-03-01

This paper focuses on the development of mixed metal oxide thin films and physical characterization of the films. The films were produced by co-evaporation of titanium oxide and tungsten oxide powders. This allowed the development of titanium oxide-tungsten oxide films as analyzed using XPS. Examination in the SEM and AFM showed that the films were nanoporous with the pore size and pore orientation varying as a function of the deposition angle. UV-vis spectra of the films show an increase of transmittance with increasing deposition angle which is attributed to the structure and porosity of the films. Raman analysis indicated that the as-deposited films have broad and weak Raman characteristics, attributed to the nanocrystal nature of the films and the presence of defects, and the peak broadening deceases after annealing the film, as expected.

Thin-film formation of Si clathrates on Si wafers

NASA Astrophysics Data System (ADS)

Ohashi, Fumitaka; Iwai, Yoshiki; Noguchi, Akihiro; Sugiyama, Tomoya; Hattori, Masashi; Ogura, Takuya; Himeno, Roto; Kume, Tetsuji; Ban, Takayuki; Nonomura, Shuichi

2014-04-01

In this study, we prepared Si clathrate films (Na8Si46 and NaxSi136) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10-2 Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na8Si46 and NaxSi136 using the appropriate crystalline orientation of Si substrates.

Electrospark doping of steel with tungsten

DOE Office of Scientific and Technical Information (OSTI.GOV)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru; Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensionalmore » approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.« less

Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

PubMed Central

Babenko, Vitaliy; Murdock, Adrian T.; Koós, Antal A.; Britton, Jude; Crossley, Alison; Holdway, Philip; Moffat, Jonathan; Huang, Jian; Alexander-Webber, Jack A.; Nicholas, Robin J.; Grobert, Nicole

2015-01-01

Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials. PMID:26175062

Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Park, Jae Hyo; Kim, Hyung Yoon; Chae, Hee Jae; Jang, Gil Su; Lee, Yong Hee; Han, Ji Su; Joo, Seung Ki

2016-06-01

Excimer laser annealing (ELA) is known to be the most common crystallization technology for the fabrication of low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) in the mass production industry. This technology, however, cannot be applied to bottom-gate (BG) TFTs, which are well developed for the liquid-crystal display (LCD) back-planes, because strong laser energy of ELA can seriously damage the other layers. Here, we propose a novel high-performance BG poly-Si TFT using Ni silicide seed-induced lateral crystallization (SILC). The SILC technology renders it possible to ensure low damage in the layers, smooth surface, and longitudinal large grains in the channel. It was observed that the electrical properties exhibited a steep subthreshold slope of 110 mV/dec, high field-effect mobility of 304 cm2/Vsec, high I on/ I off ratio of 5.9 × 107, and a low threshold voltage of -3.9 V.

Vapor deposition of thin films

DOEpatents

Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

1992-01-01

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Tuning the metal-insulator transition of VO2 by introducing W dopants via a combinatorial approach

NASA Astrophysics Data System (ADS)

Liang, Yangang; Lee, Seunghun; Zhang, Xiaohang; Takeuchi, Ichiro

We have systematically studied the structural phase transition and the electronic properties of composition spread V1-xWxO2 (0 <= x <= 0.037) thin films fabricated on silicon (001) and c-cut sapphire substrates through combinatorial pulsed laser deposition of a V2O5 target and a WO3 target. Our in-situ temperature-dependent x-ray diffraction measurements reveal a gradual change in the film structure from a monoclinic phase to a tetragonal phase via an intermediate mixture of the two as the concentration of tungsten increases from 0% to 3.7% at 300 K. At 358 K, the film is found to be in a tetragonal phase for the entire composition range we studied. The results also suggest that the volume of the unit cell increases as the concentration of tungsten increases. Electrical transport results further show that both the phase transition temperature and the width of the hysteresis loop decrease with the increasing of the concentration of tungsten. Especially, epitaxial V1-xWxO2 films fabricated on c-cut sapphire substrates show narrower hysteresis loop compared to textured V1-xWxO2 films fabricated on Si (100) substrates. In addition, the Hall effect measurements on the epitaxial V1-xWxO2 thin films at various temperature points provide important information for the change in the electronic structure upon increasing the concentration of tungsten. This work was supported by CNAM.

Room-temperature processed films of colloidal carved rod-shaped nanocrystals of reduced tungsten oxide as interlayers for perovskite solar cells.

PubMed

Masi, Sofia; Mastria, Rosanna; Scarfiello, Riccardo; Carallo, Sonia; Nobile, Concetta; Gambino, Salvatore; Sibillano, Teresa; Giannini, Cinzia; Colella, Silvia; Listorti, Andrea; Cozzoli, P Davide; Rizzo, Aurora

2018-04-25

Thanks to their high stability, good optoelectronic and extraordinary electrochromic properties, tungsten oxides are among the most valuable yet underexploited materials for energy conversion applications. Herein, colloidal one-dimensional carved nanocrystals of reduced tungsten trioxide (WO3-x) are successfully integrated, for the first time, as a hole-transporting layer (HTL) into CH3NH3PbI3 perovskite solar cells with a planar inverted device architecture. Importantly, the use of such preformed nanocrystals guarantees the facile solution-cast-only deposition of a homogeneous WO3-x thin film at room temperature, allowing achievement of the highest power conversion efficiency ever reported for perovskite solar cells incorporating raw and un-doped tungsten oxide based HTL.

Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films

NASA Astrophysics Data System (ADS)

Rubio, E. J.; Ramana, C. V.

2013-05-01

Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. The structure and optical properties of W-incorporated Ga2O3 films were evaluated using X-ray diffraction, scanning electron microscopy, and spectrophotometric measurements. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and optical properties of Ga2O3 films. The bandgap of Ga2O3 films without W-incorporation was ˜5 eV. Red-shift in the bandgap was noted with increasing W-concentration indicating the electronic structure changes in W-Ga2O3 films. A functional relationship between W-concentration and optical property is discussed.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Cobalt disilicide contacts to silicon-germanium alloys

NASA Astrophysics Data System (ADS)

Goeller, Peter Thomas

This dissertation investigated the structure and stability of thin (18--45 nm) cobalt disilicide films, electron beam evaporated onto strained and relaxed Si1--xGex/Si(001) alloy layers. The aim of these investigations was to develop a means of growing smooth, continuous, epitaxial and thermally stable CoSi2 films suitable for use as contacts in SiGe device technology. Previous research on the reaction of Co metal with SiGe alloys has indicated a number of problems, such as film islanding, formation of polycrystalline silicide films, Ge segregation and poor thermal stability. In the present work, we studied the scientific issues underlying these phenomena with a variety of experimental techniques. Our initial studies comparing direct deposition of Co versus co-deposition of Co and Si indicated that co-deposition resulted in CoSi2 formation at much lower temperatures (500°C) than with the direct deposition method (700°C). Furthermore, the co-deposited films were epitaxial to the SiGe layer, whereas the direct deposited films were polycrystalline. Both methods resulting in increasing islanding of the films with increasing annealing temperature. The issues underlying the islanding of the co-deposited films were investigated with an in situ XAFS investigation of the Co/SiGe interface using monolayers of Co. It was determined that Co preferentially bonds with Si atoms as the annealing temperature is increased, leading to segregation of Ge at the interface and faceting of the silicide. A modified template method of silicide growth was devised, in which a sacrificial Si layer was deposited onto the SiGe surface before the CoSi2 template was grown. This growth method was shown to result in smooth, epitaxial and thermally stable films of CoSi2 on Si0.80Ge0.20 alloys. A thickness effect was observed for the direct deposition of Co on SiGe alloys, in which Co layers do not completely convert to CoSi2 until thicknesses greater than 35 nm are deposited. A thermodynamic model was developed, based on the Gibbs free energy change of the CoSi → CoSi2 transition, which indicated that the thickness effect was driven by the presence of Ge in the reaction zone. Finally, the Ge segregation phenomenon accompanying the direct reaction of Co on both strained and relaxed Si0.80Ge0.20 alloys was investigated. It was determined using XRD and EDS in the STEM microscope that Ge segregation on strained SiGe takes the form of Ge-enriched SiGe regions surrounding CoSi and CoSi2 grains at the surface of the film. (Abstract shortened by UMI.)

Coatings for wear and lubrication

NASA Technical Reports Server (NTRS)

Spalvins, T.

1978-01-01

Recent advances in the tribological uses of rf-sputtered and ion plated films of solid film lubricants (laminar solids, soft metals, organic polymers) and wear resistant refractory compounds (carbides, nitrides, silicides) are reviewed. The sputtering and ion plating potentials and the corresponding coatings formed were evaluated relative to the friction coefficient, wear endurance life and mechanical properties. The tribological and mechanical properties for each kind of film are discussed in terms of film adherence, coherence, density, grain size, morphology, internal stresses, thickness, and substrate conditions such as temperature, topography, chemistry and dc-biasing. The ion plated metallic films in addition to improved tribological properties also have better mechanical properties such as tensile strength and fatigue life.

Morphology, structure, and magnetism of FeCo thin films electrodeposited on hydrogen-terminated Si(111) surfaces.

PubMed

Zarpellon, J; Jurca, H F; Mattoso, N; Klein, J J; Schreiner, W H; Ardisson, J D; Macedo, W A A; Mosca, D H

2007-12-15

In this work we describe the fabrication of FeCo alloy (less than 10 at% Co) thin films from aqueous ammonium sulfate solutions onto n-type Si(111) substrates using potentiostatic electrodeposition at room temperature. The incorporation of Co into the deposits tends to inhibit Fe silicide formation and to protect deposits against oxidation under air exposure. As the incorporation of Co was progressively increased, the sizes of nuclei consisting of FeCo alloy increased, leading to films with a highly oriented body-centered cubic structure with crystalline texture, where (110) planes remain preferentially oriented parallel to the film surface.

Reactively sputtered thermochromic tungsten-doped VO2 films

NASA Astrophysics Data System (ADS)

Sobhan, M. A.; Kivaisi, R. T.; Stjerna, B. A.; Granqvist, Claes-Goeran

1994-09-01

Tungsten-doped vanadium oxide (V1-xWxO2) films were prepared by concurrent reactive dc magnetron sputtering of vanadium and tungsten in an Ar + O2 plasma with a controlled oxygen partial pressure. Films were deposited onto glass substrates at 400 degree(s)C. The films had a metal-semiconductor transition at a temperature (tau) t that was depressed when x was increased. Rutherford Back Scattering was used to determine x. X- ray diffraction was employed to confirm the monoclinic low-temperature VO2 phase. The relation between x and (tau) t was studied and compared with results from the literature. It was shown that (tau) t could be set to a value between 17 and 65 degree(s)C by proper choice of x. The optical and electrical properties of the films were investigated around the metal-semiconductor phase transition. The luminous transmittance was rather unaffected by the temperature, whereas the near infrared transmittance showed lower values above (tau) t. The degree of thermochromic modulation decreased for increased x. Electrical measurements showed that the ratio of the resistance above and below (tau) t decreased with increasing x.

Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

NASA Astrophysics Data System (ADS)

De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

2012-09-01

Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

Tungsten Doped TiO2 with Enhanced Photocatalytic and Optoelectrical Properties via Aerosol Assisted Chemical Vapor Deposition

PubMed Central

Sathasivam, Sanjayan; Bhachu, Davinder S.; Lu, Yao; Chadwick, Nicholas; Althabaiti, Shaeel A.; Alyoubi, Abdulrahman O.; Basahel, Sulaiman N.; Carmalt, Claire J.; Parkin, Ivan P.

2015-01-01

Tungsten doped titanium dioxide films with both transparent conducting oxide (TCO) and photocatalytic properties were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concentrations of tungsten ethoxide at 500 °C from a toluene solution. The films were anatase TiO2, with good n-type electrical conductivities as determined via Hall effect measurements. The film doped with 2.25 at.% W showed the lowest resistivity at 0.034 Ω.cm and respectable charge carrier mobility (14.9 cm3/V.s) and concentration (×1019 cm−3). XPS indicated the presence of both W6+ and W4+ in the TiO2 matrix, with the substitutional doping of W4+ inducing an expansion of the anatase unit cell as determined by XRD. The films also showed good photocatalytic activity under UV-light illumination, with degradation of resazurin redox dye at a higher rate than with undoped TiO2. PMID:26042724

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

PubMed

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

NASA Astrophysics Data System (ADS)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.

PubMed

Bhatta, Umananda M; Rath, Ashutosh; Dash, Jatis K; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P V

2009-11-18

Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio ( approximately 15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst.

Electrochemical synthesis of nanoporous tungsten carbide and its application as electrocatalysts for photoelectrochemical cells.

PubMed

Kang, Jin Soo; Kim, Jin; Lee, Myeong Jae; Son, Yoon Jun; Jeong, Juwon; Chung, Dong Young; Lim, Ahyoun; Choe, Heeman; Park, Hyun S; Sung, Yung-Eun

2017-05-04

Photoelectrochemical (PEC) cells are promising tools for renewable and sustainable solar energy conversion. Currently, their inadequate performance and high cost of the noble metals used in the electrocatalytic counter electrode have postponed the practical use of PEC cells. In this study, we report the electrochemical synthesis of nanoporous tungsten carbide and its application as a reduction catalyst in PEC cells, namely, dye-sensitized solar cells (DSCs) and PEC water splitting cells, for the first time. The method employed in this study involves the anodization of tungsten foil followed by post heat treatment in a CO atmosphere to produce highly crystalline tungsten carbide film with an interconnected nanostructure. This exhibited high catalytic activity for the reduction of cobalt bipyridine species, which represent state-of-the-art redox couples for DSCs. The performance of tungsten carbide even surpassed that of Pt, and a substantial increase (∼25%) in energy conversion efficiency was achieved when Pt was substituted by tungsten carbide film as the counter electrode. In addition, tungsten carbide displayed decent activity as a catalyst for the hydrogen evolution reaction, suggesting the high feasibility for its utilization as a cathode material for PEC water splitting cells, which was also verified in a two-electrode water photoelectrolyzer.

Alkali metal-refractory metal biphase electrode for AMTEC

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor); Bankston, Clyde P. (Inventor); Cole, Terry (Inventor); Khanna, Satish K. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Wheeler, Bob L. (Inventor)

1989-01-01

An electrode having increased output with slower degradation is formed of a film applied to a beta-alumina solid electrolyte (BASE). The film comprises a refractory first metal M.sup.1 such as a platinum group metal, suitably platinum or rhodium, capable of forming a liquid or a strong surface adsorption phase with sodium at the operating temperature of an alkali metal thermoelectric converter (AMTEC) and a second refractory metal insoluble in sodium or the NaM.sup.1 liquid phase such as a Group IVB, VB or VIB metal, suitably tungsten, molybdenum, tantalum or niobium. The liquid phase or surface film provides fast transport through the electrode while the insoluble refractory metal provides a structural matrix for the electrode during operation. A trilayer structure that is stable and not subject to deadhesion comprises a first, thin layer of tungsten, an intermediate co-deposited layer of tungsten-platinum and a thin surface layer of platinum.

Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

NASA Astrophysics Data System (ADS)

Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

2015-03-01

Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

The optical and electrochemical properties of electrochromic films: WO3+xV2O5

NASA Astrophysics Data System (ADS)

Li, Zhuying; Liu, Hui; Liu, Ye; Yang, Shaohong; Liu, Yan; Wang, Chong

2010-05-01

Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic films exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission. These films with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic films using magnetron sputter deposition tungsten oxide thin films and vanadium oxide doped tungsten-vanadium oxide thin films on ITO coated glass were investigated. From the UV region of the transmittance spectra, the optical band gap energy from the fundamental absorption edge can be determined. And the Cyclic voltammograms of these thin films in 1 mol LiClO4 propylene carbonate electrolyte (LIPC) were measured and analysed. The anode electrochromic V2O5 doped cathode electrochromic WO3 could make films colour changing while the transmittance of films keeped invariance. These performance characteristics make tungstenvanadium oxide colour changeably thin films are suitable for electrochromic windows applications.

Electrical transport properties of nanoplates shaped tungsten oxide embedded poly(vinyl-alcohol) film

NASA Astrophysics Data System (ADS)

Das, Amit Kumar; Chatterjee, Piyali; Meikap, Ajit Kumar

2018-04-01

Tungsten oxide (WO3) nanoplates have been synthesized via hydrothermal method. The average crystallite size of the nanoplates is 28.9 ± 0.5 nm. The direct and indirect band gap of WO3 is observed. The AC conductivity of PVA-WO3 composite film has been observed and carrier transport mechanism follows correlated barrier hopping model. The maximum barrier height of the composite film is 0.1 eV. The electric modulus reflects the non-Debye type behaviour of relaxation time which is simulated by Kohlrausch-Willims-Watts (KWW) function.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

Synthesis and characterization of barium silicide (BaSi2) nanowire arrays for potential solar applications.

PubMed

Pokhrel, Ankit; Samad, Leith; Meng, Fei; Jin, Song

2015-11-07

In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline BaSi2 NW arrays by reacting with Ba vapor at about 930 °C. Structural characterization by X-ray diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline BaSi2. The optimal conversion reaction conditions allow the phase-pure synthesis of BaSi2 NWs that maintain the original NW morphology, and tuning the reaction parameters led to a controllable synthesis of BaSi2 films on silicon substrates. The optical bandgap and electrochemical measurements of these BaSi2 NWs reveal a bandgap and carrier concentrations comparable to previously reported values for BaSi2 thin films.

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

NASA Technical Reports Server (NTRS)

Mahan, John E.

1989-01-01

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

NASA Astrophysics Data System (ADS)

Hussnain, Ali; Singh Rawat, Rajdeep; Ahmad, Riaz; Hussain, Tousif; Umar, Z. A.; Ikhlaq, Uzma; Chen, Zhong; Shen, Lu

2015-02-01

Nano-crystalline tungsten nitride thin films are synthesized on AISI-304 steel at room temperature using Mather-type plasma focus system. The surface properties of the exposed substrate against different deposition shots are examined for crystal structure, surface morphology and mechanical properties using X-ray diffraction (XRD), atomic force microscope, field emission scanning electron microscope and nano-indenter. The XRD results show the growth of WN and WN2 phases and the development of strain/stress in the deposited films by varying the number of deposition shots. Morphology of deposited films shows the significant change in the surface structure with different ion energy doses (number of deposition shots). Due to the effect of different ion energy doses, the strain/stress developed in the deposited film leads to an improvement of hardness of deposited films.

Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, Stephen K.; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2013-09-01

The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm - 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.

Microstructural and wear properties of sputtered carbides and silicides

NASA Technical Reports Server (NTRS)

Spalvins, T.

1977-01-01

Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.

Interface reactions between silicon carbide and interlayers in silicon carbide copper metal matrix composites

NASA Astrophysics Data System (ADS)

Köck, T.; Brendel, A.; Bolt, H.

2007-05-01

Novel copper matrix composites reinforced with silicon carbide fibres are considered as a new generation of heat sink materials for the divertor of future fusion reactors. The divertor is exposed to intense particle bombardment and heat loads of up to 15 MW m-2. This component consists of the plasma-facing material which is bonded to the actively cooled heat sink. Due to its high thermal conductivity of about 400 W m-1 K-1 copper is a promising material for the heat sink. To increase the mechanical properties of copper at working temperature (823 K), silicon carbide fibres with a diameter of 140 μm are used to reinforce the interface area between the plasma-facing material and the heat sink. Push-out tests show that the adhesion between SiC fibre and Cu matrix without any interlayer is very low. To increase the fibre-matrix bonding the fibres are coated with Cr and W with a thickness of 300-400 nm before Cu deposition by magnetron sputtering. Push-out tests on these modified fibres show a significant increase in adhesion compared to the fibres without interlayer. XRD investigations after a heat treatment at 923 K show a chromium carbide (Cr23C6, Cr3C2) formation and the absence of chromium silicides. In the case of a W interlayer a W2C formation is detected and also no tungsten silicides. Single-fibre tensile tests were performed to investigate the influence of the reaction zone on the ultimate tensile strength of the fibres. The ultimate tensile strength for fibres without interlayer remains constant at about 2200 MPa after annealing at 923 K. The fibres with chromium and tungsten interlayers, respectively, show a decrease of about 30% of the ultimate tensile strength after the heat treatment at 923 K.

Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki

2017-06-01

Low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) are attractive candidates for use in active-matrix flat-panel displays. However, these exhibit a large leakage current due to the nickel silicide being trapped at the grain boundaries of the poly-Si. We reduced the leakage current of the MIC poly-Si TFTs by developing a gettering method to remove the Ni impurities using a Si getter layer and natively-formed SiO2 as the etch stop interlayer. The Ni trap state density (Nt) in the MIC poly-Si film decreased after the Ni silicide gettering, and as a result, the leakage current of the MIC poly-Si TFTs decreased. Furthermore, the leakage current of MIC poly-Si TFTs gradually decreased with additional gettering. To explain the gettering effect on MIC poly-Si TFTs, we suggest an appropriate model. He received the B.S. degree in School of Advanced Materials Engineering from Kookmin University, Seoul, South Korea in 2012, and the M.S. degree in Department of Materials Science and Engineering from Seoul National University, Seoul, South Korea in 2014. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and top-gate polycrystalline-silicon thin-film transistors. He received the M.S. degree in innovation technology from Ecol Polytechnique, Palaiseau, France in 2013. He is currently pursuing the Ph.D. degree with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and copper-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He is currently pursuing the integrated M.S and Ph.D course with the Department of Materials Science and Engineering, Seoul National University, Seoul. He is involved in semiconductor device fabrication technology and bottom-gate polycrystalline-silicon thin-film transistors. He received the B.S. degree in metallurgical engineering from Seoul National University, Seoul, South Korea, in 1974, and the M.S. and Ph.D. degrees in material science and engineering from Stanford University, Stanford, CA, USA, in 1980 and 1983, respectively. He is currently a Professor with the Department of Materials Science and Engineering, Seoul National University, Seoul.

Thin film molybdenum silicide as potential temperature sensors for turbine engines

NASA Technical Reports Server (NTRS)

Ho, C. H.; Prakash, S.; Deshpandey, C. V.; Doerr, H. J.; Bunshah, R. F.

1989-01-01

Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.

Study of Nickel Silicide as a Copper Diffusion Barrier in Monocrystalline Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kale, Abhijit; Beese, Emily; Saenz, Theresa

NiSi as a conductive diffusion barrier to silicon has been studied. We demonstrate that the NiSi films formed using the single step annealing process are as good as the two step process using XRD and Raman. Quality of NiSi films formed using e-beam Ni and electroless Ni process has been compared. Incomplete surface coverage and presence of constituents other than Ni are the main challenges with electroless Ni. We also demonstrate that Cu reduces the thermal stability of NiSi films. The detection of Cu has proven to be difficult due to temperature limitations.

Deuterium diffusion and retention in tungsten coated with barrier layer during ion irradiation

NASA Astrophysics Data System (ADS)

Begrambekov, L. B.; Kaplevsky, A. S.; Dovganyuk, S. S.; Evsin, A. E.; Baryshnikova, I. E.

2017-12-01

The results of the comparative analysis of low-temperature desorption of deuterium from tungsten coated with aluminum and yttrium films under the irradiation by hydrogen plasma with oxygen impurity are presented. The irradiation of aluminum or yttrium coating by H2+1%O2 plasma leads to the desorption of implanted deuterium from the samples. It was shown that the number of atoms desorbed depends on the sign of enthalpy of hydrogen solution in the metal film.

Xenon-Ion Drilling of Tungsten Films

NASA Technical Reports Server (NTRS)

Garner, C. E.

1986-01-01

High-velocity xenon ions used to drill holes of controlled size and distribution through tungsten layer that sheaths surface of controlled-porosity dispenser cathode of traveling wave-tube electron emitter. Controlled-porosity dispenser cathode employs barium/calcium/ aluminum oxide mixture that migrates through pores in cathode surface, thus coating it and reducing its work function. Rapid, precise drilling technique applied to films of other metals and used in other applications where micron-scale holes required. Method requires only few hours, as opposed to tens of hours by prior methods.

Role of atomic bonding for compound and glass formation in Ni-Si, Pd-Si, and Ni-B systems

NASA Astrophysics Data System (ADS)

Tanaka, K.; Saito, T.; Suzuki, K.; Hasegawa, R.

1985-11-01

Valence electronic structures of crystalline compounds and glassy alloys of Ni silicides, Pd silicides, and Ni borides are studied by soft-x-ray spectroscopy over wide ranges of Si and B concentrations. The samples prepared include bulk compounds, glassy ribbons, and amorphous sputtered films. Silicon Kβ emissions of Ni and Pd silicides generally consist of a prominent peak fixed at ~=4.5 and ~=5.8 eV below the Fermi level EF, respectively, with a shoulder near EF which grows and shifts toward lower energy with increasing Si concentration. The former is identified as due to Si p-like states forming Si 3p-Ni 3d or Si 3p-Pd 4d bonding states while the latter as due to the corresponding antibonding states. Ni L3 and Pd L3 emissions of these silicides indicate that Ni 3d and Pd 4d states lie between the above two states. These local electronic configurations are consistent with partial-density-of-states (PDOS) calculations performed by Bisi and Calandra. Similar electronic configurations are suggested for Ni borides from B Kα and Ni L3 emissions. Differences of emission spectra between compounds and glasses of similar compositions are rather small, but some enhancement of the contribution of antibonding states to the PDOS near EF is suggested for certain glasses over that of the corresponding compounds. These features are discussed in connection with the compound stability and glass formability.

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2014-01-01

The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

Tribology of carbide derived carbon films synthesized on tungsten carbide

NASA Astrophysics Data System (ADS)

Tlustochowicz, Marcin

Tribologically advantageous films of carbide derived carbon (CDC) have been successfully synthesized on binderless tungsten carbide manufactured using the plasma pressure compaction (P2CRTM) technology. In order to produce the CDC films, tungsten carbide samples were reacted with chlorine containing gas mixtures at temperatures ranging from 800°C to 1000°C in a sealed tube furnace. Some of the treated samples were later dechlorinated by an 800°C hydrogenation treatment. Detailed mechanical and structural characterizations of the CDC films and sliding contact surfaces were done using a series of analytical techniques and their results were correlated with the friction and wear behavior of the CDC films in various tribosystems, including CDC-steel, CDC-WC, CDC-Si3N4 and CDC-CDC. Optimum synthesis and treatment conditions were determined for use in two specific environments: moderately humid air and dry nitrogen. It was found that CDC films first synthesized at 1000°C and then hydrogen post-treated at 800°C performed best in air with friction coefficient values as low as 0.11. However, for dry nitrogen applications, no dechlorination was necessary and both hydrogenated and as-synthesized CDC films exhibited friction coefficients of approximately 0.03. A model of tribological behavior of CDC has been proposed that takes into consideration the tribo-oxidation of counterface material, the capillary forces from adsorbed water vapor, the carbon-based tribofilm formation, and the lubrication effect of both chlorine and hydrogen.

Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

NASA Astrophysics Data System (ADS)

Radhika, R.; Ramachandra Rao, M. S.

2016-11-01

Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

Research in the Optical Sciences

DTIC Science & Technology

1990-03-12

organics for guided wave devices; nonlinear propagation and wave mixing in sodium vapor: gain/feedback approach to optical instabilities; conical... SODIUM VAPOR: GAIN/FEEDBACK APPROACH TO OPTICAL INSTABILITIES; CONICAL EMISSION; KALEIDOSCOPIC SPATIAL INSTABILITY G. Khitrova and H . M . Gibbs...Falco, "Ex situ characterization of MBE-grown molybdenum silicide thin films, The 8th Annual Symposium of the Arizona chapter of The American Vacuum

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Growth and characterization of Pt-Si droplets for silicon nanowires synthesis

NASA Astrophysics Data System (ADS)

Khumalo, Z. M.; Topić, M.; Mtshali, C. B.; Blumenthal, M.

2018-02-01

The formation of platinum silicide phases as a function of the annealing temperature was investigated using in-situ real-time Rutherford backscattering spectrometry. The in-situ real-time RBS revealed the reaction of platinum and silicon to start at about 220 °C to form platinum silicide phases, Pt2Si and PtSi in sequence. Scanning electron microscope revealed the morphological change in the platinum layer (formation of droplets) at 800 °C. The particle induced X-ray emission analysis showed the variation of platinum intensity, in the droplets areas, between 1600 and 2000 counts. The surrounding areas are left almost uncovered due to platinum film dewetting. In-plane as well as out-of-plane silicon nanowires were observed to form at 800 °C and 1000 °C using pulsed laser ablation and thermal annealing techniques, respectively.

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NASA Astrophysics Data System (ADS)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors.

PubMed

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E; Iacopi, Francesca

2015-10-30

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square(-1) from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g(-1). This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

Smart tungsten alloys as a material for the first wall of a future fusion power plant

NASA Astrophysics Data System (ADS)

Litnovsky, A.; Wegener, T.; Klein, F.; Linsmeier, Ch.; Rasinski, M.; Kreter, A.; Unterberg, B.; Coenen, J. W.; Du, H.; Mayer, J.; Garcia-Rosales, C.; Calvo, A.; Ordas, N.

2017-06-01

Tungsten is currently deemed as a promising plasma-facing material (PFM) for the future power plant DEMO. In the case of an accident, air can get into contact with PFMs during the air ingress. The temperature of PFMs can rise up to 1200 °C due to nuclear decay heat in the case of damaged coolant supply. Heated neutron-activated tungsten forms a volatile radioactive oxide which can be mobilized into the atmosphere. New self-passivating ‘smart’ alloys can adjust their properties to the environment. During plasma operation the preferential sputtering of lighter alloying elements will leave an almost pure tungsten surface facing the plasma. During an accident the alloying elements in the bulk are forming oxides thus protecting tungsten from mobilization. Good plasma performance and the suppression of oxidation are required for smart alloys. Bulk tungsten (W)-chroimum (Cr)-titanium (Ti) alloys were exposed together with pure tungsten (W) samples to the steady-state deuterium plasma under identical conditions in the linear plasma device PSI 2. The temperature of the samples was ~576 °C-715 °C, the energy of impinging ions was 210 eV matching well the conditions expected at the first wall of DEMO. Weight loss measurements demonstrated similar mass decrease of smart alloys and pure tungsten samples. The oxidation of exposed samples has proven no effect of plasma exposure on the oxidation resistance. The W-Cr-Ti alloy demonstrated advantageous 3-fold lower mass gain due to oxidation than that of pure tungsten. New yttrium (Y)-containing thin film systems are demonstrating superior performance in comparison to that of W-Cr-Ti systems and of pure W. The oxidation rate constant of W-Cr-Y thin film is 105 times less than that of pure tungsten. However, the detected reactivity of the bulk smart alloy in humid atmosphere is calling for a further improvement.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates

NASA Astrophysics Data System (ADS)

Lemang, M.; Rodriguez, Ph.; Nemouchi, F.; Juhel, M.; Grégoire, M.; Mangelinck, D.

2018-02-01

Phosphorus diffusion and its distribution during the solid-state reactions between Ni0.9Pt0.1 and implanted Si substrates are studied. Silicidation is achieved through a first rapid thermal annealing followed by a selective etching and a direct surface annealing. The redistribution of phosphorus in silicide layers is investigated after the first annealing for different temperatures and after the second annealing. Phosphorus concentration profiles obtained thanks to time of flight secondary ion mass spectrometry and atom probe tomography characterizations for partial and total reactions of the deposited 7 nm thick Ni0.9Pt0.1 film are presented. Phosphorus segregation is observed at the Ni0.9Pt0.1 surface and at Ni2Si interfaces during Ni2Si formation and at the NiSi surface and the NiSi/Si interface after NiSi formation. The phosphorus is evidenced in low concentrations in the Ni2Si and NiSi layers. Once NiSi is formed, a bump in the phosphorus concentration is highlighted in the NiSi layer before the NiSi/Si interface. Based on these profiles, a model for the phosphorus redistribution is proposed to match this bump to the former Ni2Si/Si interface. It also aims to bind the phosphorus segregation and its low concentration in different silicides to a low solubility of phosphorus in Ni2Si and in NiSi and a fast diffusion of phosphorus at their grain boundaries. This model is also substantiated by a simulation using a finite difference method in one dimension.

Intermetallics as innovative CRM-free materials

NASA Astrophysics Data System (ADS)

Novák, Pavel; Jaworska, Lucyna; Cabibbo, Marcello

2018-03-01

Many of currently used technical materials cannot be imagined without the use of critical raw materials. They require chromium (e.g. in stainless and tool steels), tungsten and cobalt (tool materials, heat resistant alloys), niobium (steels and modern biomaterials). Therefore there is a need to find substitutes to help the European economy. A promising solution can be the application of intermetallics. These materials offer wide variety of interesting properties, such as high hardness and wear resistance or high chemical resistance. In this paper, the overview of possible substitute materials among intermetallics is presented. Intermetallics based on aluminides and silicides are shown as corrosion resistant materials, composites composed of ceramics in intermetallic matrix as possible tool materials. The manufacturing processes are being developed to minimize the disadvantages of these materials, mainly the room-temperature brittleness.

Electrodeposition and characterisation of Al-W alloy films from ionic liquid

NASA Astrophysics Data System (ADS)

Höhlich, D.; Wachner, D.; Müller, M.; Scharf, I.; Lampke, T.

2018-06-01

Al–W alloy films were prepared by electrodeposition using anhydrous 1-ethyl-3-methylimidazolium chloride (EMIMCl) ionic-liquid solution with aluminium chloride in a ratio of 1:1.5. As a commercially available tungsten precursor, tungsten hexachloride was used. The metal is dissolved in the ionic liquid at concentrations up to 0.06 mol/l. The deposition took place outside the glove box with a continuous argon stream over the electrolyte at a temperature of 60 °C with a current density of 1 A/m2. Resulting alloys show a tungsten content higher than 20 wt% (3.5 at%). The phase composition of Al-W alloys was observed by X-ray diffraction (XRD), and the chemical composition was characterised by scanning electron microscopy (SEM) and inductively-coupled plasma optical emission spectroscopy (ICP-OES).

Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization.

PubMed

Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

2016-11-04

Tungsten diselenide (WSe 2 ) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe 2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe 2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe 2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe 2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe 2 film texture. Based on the stress state of the W film, a model for growth of the WSe 2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe 2 film.

Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization

PubMed Central

Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

2016-01-01

Tungsten diselenide (WSe2) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe2 film texture. Based on the stress state of the W film, a model for growth of the WSe2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe2 film. PMID:27812031

TiO2/WO3 photoactive bilayers in the UV-Vis light region

NASA Astrophysics Data System (ADS)

Vasilaki, E.; Vernardou, D.; Kenanakis, G.; Vamvakaki, M.; Katsarakis, N.

2017-04-01

In this work, photoactive bilayered films consisting of anatase TiO2 and monoclinic WO3 were synthesized by a sol-gel route. Titanium isopropoxide and tungsten hexachloride were used as metal precursors and deposition was achieved by spin-coating on Corning glass substrates. The samples were characterized by X-ray diffraction, photoluminescence, UV-Vis, and Raman spectroscopy, as well as field emission scanning electron microscopy. The prepared immobilized catalysts were tested for their photocatalytic performance by the decolorization of methylene blue in aqueous matrices, under UV-Vis light irradiation. The annealing process influenced the crystallinity of the bilayered films, while the concentration of the tungsten precursor solution and the position of the tungsten trioxide layer further affected their photocatalytic performance. In particular, the photocatalytic performance of the bilayered films was optimized at a concentration of 0.1 M of the WO3 precursor solution, when deposited as an overlying layer on TiO2 by two annealing steps ( 76% methylene blue decolorization in 300 min of irradiation versus 59% in the case of a bare TiO2 film). In general, the coupled layer catalysts exhibited superior photoactivity compared to that of bare TiO2 films with WO3 acting as an electron trap, resulting, therefore, in a more efficient electron-hole separation and inhibiting their recombination.

Characterization of tungsten films and their hydrogen permeability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nemanič, Vincenc, E-mail: vincenc.nemanic@ijs.si; Kovač, Janez; Lungu, Cristian

2014-11-01

Prediction of tritium migration and its retention within fusion reactors is uncertain due to a significant role of the structural disorder that is formed on the surface layer after plasma exposure. Tungsten films deposited by any of the suitable methods are always disordered and contain a high density of hydrogen traps. Experiments on such films with hydrogen isotopes present a suitable complementary method, which improves the picture of the hydrogen interaction with fusion relevant materials. The authors report on the morphology, composition, and structure of tungsten films deposited by the thermionic vacuum arc method on highly permeable Eurofer substrates. Subsequently,more » hydrogen permeation studies through these films were carried out in a wide pressure range from 20 to 1000 mbars at 400 °C. The final value of the permeation coefficient for four samples after 24 h at 400 °C was between P = 3.2 × 10{sup −14} mol H{sub 2}/(m s Pa{sup 0.5}) and P = 1.1 × 10{sup −15} mol H{sub 2}/(m s Pa{sup 0.5}). From the time evolution of the permeation flux, it was shown that diffusivity was responsible for the difference in the steady fluxes, as solubility was roughly the same. This is confirmed by XRD data taken on these samples.« less

A cost-effective process to prepare VO{sub 2} (M) powder and films with superior thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiudi; Zhang, Hua; Chai, Guanqi

2014-03-01

Graphical abstract: Combining codeposition and short time post annealing, VO{sub 2} (M) with high quality and excellent phase transition performance is obtained. After mixing the VO{sub 2} powder with acrylic resin, the composite films deposited on glass show superior visible transmission and solar modulation, which can be used as an excellent candidate of low cost smart window in energy saving field. - Highlights: • The VO{sub 2} powder obtained by short time thermolysis method is high purity and crystallinity with superior phase transition performance. • The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w =more » 0.4 at%. • After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite films is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. • Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4%, which means that it is a potential candidate as smart windows. - Abstract: VO{sub 2} powder with superior phase transition performance was prepared by convenient thermolysis method. The results illustrated that VO{sub 2} powder show high purity and crystallinity. VO{sub 2} particles are transformed from cluster to quasi-sphere with the increase of annealing temperature. The DSC analysis proves that VO{sub 2} show superior phase transition performance around 68 °C. The phase transition temperature can be reduced to 33.5 °C by 1.8 at% tungsten doping. The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w = 0.4 at%. After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite thin films on glass is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4% at 2000 nm, which means that it is a potential candidate as smart windows.« less

Fabrication of highly selective tungsten oxide ammonia sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llobet, E.; Molas, G.; Molinas, P.

Tungsten oxide is shown to be a very promising material for the fabrication of highly selective ammonia sensors. Films of WO{sub 3} were deposited onto a silicon substrate by means of the drop-coating method. Then, the films were annealed in dry air at two different temperatures (300 and 400 C). X-ray photoelectron spectroscopy was used to investigate the composition of the films. Tungsten appeared both in WO{sub 2} and WO{sub 3} oxidation states, but the second state was clearly dominant. Scanning electron microscopy results showed that the oxide was amorphous or nanocrystalline. The WO{sub 3}-based devices were sensitive to ammoniamore » vapors when operated between 250 and 350 C. The optimal operating temperature for the highest sensitivity to ammonia was 300 C. Furthermore, when the devices were operated at 300 C, their sensitivity to other reducing species such as ethanol, methane, toluene, and water vapor was significantly lower, and this resulted in a high selectivity to ammonia. A model for the sensing mechanisms of the fabricated sensors is proposed.« less

Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

DOE PAGES

Van Norman, Staci A.; Tringe, Joseph W.; Sain, John D.; ...

2015-04-13

This paper investigated the effective thermal conductivity (k eff) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k eff of the packed beds. For example, the keff of an alumina packed bed was increased by three times after an ~8-nm continuous W film with 20 cycles of W ALD, whereas k eff was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties of thesemore » packed beds is essential for developing thermally conductive supports as alternatives to structured supports.« less

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

NASA Astrophysics Data System (ADS)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

Plasmonic-Enhanced Catalysis

DTIC Science & Technology

2012-05-30

shifts that cannot be merely explained hydride formation. These unexpected LSPR shifts may be explained by Au/Pd interdiffusion or silicide formation...photocurrent on a chemically modified gold thin film of metal -semiconductor (TiO2) Schottky diodes. • Intrinsic correlation between the hot electron flow...reaction to study catalyst nanoparticles at the single particle level. As hydrogen gas dissociates and intercalates into Pd, Pd changes from a metal to

Processing and property evaluation of tungsten-based mixed oxides for photovoltaics and optoelectronics

NASA Astrophysics Data System (ADS)

Vargas, Mirella

Tungsten Oxide (WO3) films and low-dimensional structures have proven to be promising candidates in the fields of photonics and electronics. WO3 is a well-established n-type semiconductor characterized by unique electrochromic behavior, an ideal optical band gap that permits transparency over a wide spectral range, and high chemical integrity. The plethora of diverse properties endow WO3 to be highly effective in applications related to electrochromism, gas sensing, and deriving economical energy. Compared to the bulk films, a materials system involving WO3 and a related species (elements or metal oxides) offer the opportunity to tailor the electrochromic response, and an overall enhancement of the physio-chemical and optical properties. In the present case, WO3 and TiO2 composite films have been fabricated by reactive magnetron sputtering employing W/Ti alloy targets, and individual W and Ti targets for co-sputtering. Composite WO3-TiO2 films were fabricated with variable chemical composition and the effect of variable bulk chemistry on film structure, surface/interface chemistry and chemical valence state of the W and Ti cations was investigated in detail. The process-property relationships between composition and physical properties for the films deposited by using W/Ti alloy targets of variable Ti content are associated with decreases in the deposition rate of the WO3-TiO2 films due to the lower sputter yield of the strongly bonded TiO2 formed on the target surface. Additionally, for the co-sputtered films using variable tungsten power, the optical properties demonstrate unique optical modulation. The changes associated with the physical color of the films demonstrate the potential to tailor the optical behavior for the design and fabrication of multilayer photovoltaic and catalytic devices. The process-structure-property correlation derived in this work will provide a road-map to optimize and produce W-Ti-O thin films with desired properties for a given technological application.

Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hailong; She, Guangwei, E-mail: shegw@mail.ipc.ac.cn; Mu, Lixuan

Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires.more » Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.« less

Epitaxy of Fe/Cu/Si(1 1 1) ultrathin films: an Auger electron diffraction study

NASA Astrophysics Data System (ADS)

Castrucci, P.; Gunnella, R.; Bernardini, R.; Montecchiari, A.; Carboni, R.; De Crescenzi, M.

2001-06-01

Epitaxial Fe films, with thickness in the range between 1 and 50 ML (monolayer, ML), were grown in ultrahigh vacuum conditions on the 7×7 reconstructed (1 1 1)-Si surface. The films were evaporated on a Cu thick buffer layer to avoid iron silicides formation. Auger electron diffraction (AED) technique has been used to investigate the growth of the pseudomorphic film of fcc γ-Fe(1 1 1) and the successive growth of bcc Fe(1 1 0) domains in the Kurdjumov-Sachs orientation. The early stages of growth have been carefully investigated through AED to assess the pseudomorphism of iron γ-phase. AED patterns clearly show the presence of diffraction features that are fingerprints of the existence of a few bcc arranged atomic structures even for 1 ML iron coverage.

Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

PubMed

Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

2017-12-01

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O 2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O 2 , the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O 2 .

Surface acoustic waves/silicon monolithic sensor processor

NASA Technical Reports Server (NTRS)

Kowel, S. T.; Kornreich, P. G.; Fathimulla, M. A.; Mehter, E. A.

1981-01-01

Progress is reported in the creation of a two dimensional Fourier transformer for optical images based on the zinc oxide on silicon technology. The sputtering of zinc oxide films using a micro etch system and the possibility of a spray-on technique based on zinc chloride dissolved in alcohol solution are discussed. Refinements to techniques for making platinum silicide Schottky barrier junctions essential for constructing the ultimate convolver structure are described.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Norman, Staci A.; Falconer, John L.; Weimer, Alan W., E-mail: alan.weimer@colorado.edu

2015-04-13

This study investigated the effective thermal conductivity (k{sub eff}) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k{sub eff} of the packed beds. For example, the k{sub eff} of an alumina packed bed was increased by three times after an ∼8-nm continuous W film with 20 cycles of W ALD, whereas k{sub eff} was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties ofmore » these packed beds is essential for developing thermally conductive supports as alternatives to structured supports.« less

Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

NASA Astrophysics Data System (ADS)

Hussnain, A.; Rawat, R. S.; Ahmad, R.; Umar, Z. A.; Hussain, T.; Lee, P.; Chen, Z.

2015-07-01

Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3 kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN2 that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.

1.5 nm fabrication of test patterns for characterization of metrological systems

DOE PAGES

Babin, Sergey; Calafiore, Giuseppe; Peroz, Christophe; ...

2015-11-06

Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, eachmore » according to its designed width. As a result, the fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope. (C) 2015 American Vacuum Society.« less

Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

DOEpatents

Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

2014-02-04

Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

Characterization of hydrogenated amorphous silicon films obtained from rice husk

NASA Astrophysics Data System (ADS)

Nandi, K. C.; Mukherjee, D.; Biswas, A. K.; Acharya, H. N.

1991-08-01

Hydrogenated amorphous silicon ( a-Si: H) films were prepared by chemical vapour deposition (CVD) of silanes generated by the acid hydrolysis of magnesium silicide (Mg 2Si) obtained from rice husk. The films were deposited at various substrate temperatures ( Ts) ranging from 430 to 520°C. The results show that the films have room temperature (294 K) dark conductivity (σ d) of the order of 10 -8 - 10 -10 (ohm-cm) -1 with single activation energy (Δ Ed) and the photoconductivity (σ ph) decreases with increase of Ts. Optical band gap ( Eopt) lies between 1.60-1.73 eV and hydrogen content ( CH) in the films is at best 8.3 at %. Au/ a-Si: H junction shows that it acts as a rectifier contact with Schottky barrier height ( VB) 0.69 eV. The films are contaminated by traces of impurities like Na, K, Al, Cl and O as revealed by secondary ion mass spectrometric (SIMS) analysis.

Facile fabrication of high-efficiency near-infrared absorption film with tungsten bronze nanoparticle dense layer

NASA Astrophysics Data System (ADS)

Lee, Seong Yun; Kim, Jae Young; Lee, Jun Young; Song, Ho Jun; Lee, Sangkug; Choi, Kyung Ho; Shin, Gyojic

2014-06-01

An excellent transparent film with effective absorption property in near-infrared (NIR) region based on cesium-doped tungsten oxide nanoparticles was fabricated using a facile double layer coating method via the theoretical considerations. The optical performance was evaluated; the double layer-coated film exhibited 10% transmittance at 1,000 nm in the NIR region and over 80% transmittance at 550 nm in the visible region. To optimize the selectivity, the optical spectrum of this film was correlated with a theoretical model by combining the contributions of the Mie-Gans absorption-based localized surface plasmon resonance and reflections by the interfaces of the heterogeneous layers and the nanoparticles in the film. Through comparison of the composite and double layer coating method, the difference of the nanoscale distances between nanoparticles in each layer was significantly revealed. It is worth noting that the nanodistance between the nanoparticles decreased in the double layer film, which enhanced the optical properties of the film, yielding a haze value of 1% or less without any additional process. These results are very attractive for the nanocomposite coating process, which would lead to industrial fields of NIR shielding and thermo-medical applications.

Aligned coaxial tungsten oxide-carbon nanotube sheet: a flexible and gradient electrochromic film.

PubMed

Yao, Zhaojun; Di, Jiangtao; Yong, Zhenzhong; Zhao, Zhigang; Li, Qingwen

2012-08-25

We develop a simple dry wrapping method to fabricate a tungsten oxide (WO(3))/carbon nanotube (CNT) cable, in which WO(3) layers act as an electrochromic component while aligned CNTs as the core provide mechanical support and an anisotropic, continuous electron transport pathway. Interestingly, the resultant cable material exhibits an obvious gradient electrochromic phenomenon.

Influence of oxygen on the carbide formation on tungsten

NASA Astrophysics Data System (ADS)

Luthin, J.; Linsmeier, Ch.

2001-03-01

As a first wall material in nuclear fusion devices, tungsten will interact with carbon and oxygen from the plasma. In this study, we report on the process of thermally induced carbide formation of thin carbon films on polycrystalline tungsten and the influence of oxygen on this process. All investigations are performed using X-ray photoelectron spectroscopy (XPS). Carbon films are supplied through electron beam evaporation of graphite. The carbidization process, monitored during increased substrate temperature, can be divided into four phases. In phase I disordered carbon converts into graphite-like carbon. In phase II significant diffusion and the reaction to W 2C is observed, followed by phase III which is dominated by the presence of W 2C and the beginning reaction to WC. Finally in phase IV only WC is present, but the total carbon amount has strongly decreased. Different mechanisms of oxygen influence on the carbide formation are proposed and measurements of the reaction of carbon on tungsten with intermediate oxide layers are presented in detail. A WO 2+ x intermediate layer completely inhibits the carbide formation, while a WO 2 layer leads to WC formation at temperatures above 1270 K.

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires.

PubMed

Ogata, K; Sutter, E; Zhu, X; Hofmann, S

2011-09-07

A systematic study of the kinetics of axial Ni silicidation of as-grown and oxidized Si nanowires (SiNWs) with different crystallographic orientations and core diameters ranging from ∼ 10 to 100 nm is presented. For temperatures between 300 and 440 °C the length of the total axial silicide intrusion varies with the square root of time, which provides clear evidence that the rate limiting step is diffusion of Ni through the growing silicide phase(s). A retardation of Ni-silicide formation for oxidized SiNWs is found, indicative of a stress induced lowering of the diffusion coefficients. Extrapolated growth constants indicate that the Ni flux through the silicided NW is dominated by surface diffusion, which is consistent with an inverse square root dependence of the silicide length on the NW diameter as observed for (111) orientated SiNWs. In situ TEM silicidation experiments show that NiSi(2) is the first forming phase for as-grown and oxidized SiNWs. The silicide-SiNW interface is thereby atomically abrupt and typically planar. Ni-rich silicide phases subsequently nucleate close to the Ni reservoir, which for as-grown SiNWs can lead to a complete channel break-off for prolonged silicidation due to significant volume expansion and morphological changes.

Ni-Silicide Growth Kinetics in Si and Si/SiO2 Core/Shell Nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofmann, S.; Sutter, E.; Ogata, K.

A systematic study of the kinetics of axial Ni silicidation of as-grown and oxidized Si nanowires (SiNWs) with different crystallographic orientations and core diameters ranging from {approx} 10 to 100 nm is presented. For temperatures between 300 and 440 C the length of the total axial silicide intrusion varies with the square root of time, which provides clear evidence that the rate limiting step is diffusion of Ni through the growing silicide phase(s). A retardation of Ni-silicide formation for oxidized SiNWs is found, indicative of a stress induced lowering of the diffusion coefficients. Extrapolated growth constants indicate that the Nimore » flux through the silicided NW is dominated by surface diffusion, which is consistent with an inverse square root dependence of the silicide length on the NW diameter as observed for <111> orientated SiNWs. In situ TEM silicidation experiments show that NiSi{sub 2} is the first forming phase for as-grown and oxidized SiNWs. The silicide-SiNW interface is thereby atomically abrupt and typically planar. Ni-rich silicide phases subsequently nucleate close to the Ni reservoir, which for as-grown SiNWs can lead to a complete channel break-off for prolonged silicidation due to significant volume expansion and morphological changes.« less

Structural and magnetic properties of nanocomposite iron-containing SiCxNy films

NASA Astrophysics Data System (ADS)

Pushkarev, R. V.; Fainer, N. I.; Maurya, K. K.

2017-02-01

New ferromagnetic films with composition SiCxNyFez were synthesized using chemical vapor deposition technique. Films were deposited using ferrocene, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and hydrogen gaseous mixture. Chemical and phase composition of the films were studied by FTIR, Raman spectroscopy and X-ray diffraction with grazing incidence (GI-XRD). FTIR spectra analysis confirmed the existence of Si-C and Si-N bonds. Graphite inclusions and amorphous carbon were determined by Raman spectra analysis. The surface of the SiCxNyFez films studied by SEM is covered by nanocrystallites of iron oxide Fe3O4 phase. The main purpose of GI-XRD analysis is to describe the layered structure of the films in detail. It was shown by GI-XRD study, that phase composition of the SiCxNyFez films varies from iron oxide Fe3O4 to iron silicide Fe3Si and silicon carbide SiC with the deposition temperature growing. It was established, that SiCxNyFez films are perspective for application in the spintronic field.

Formation of silicon nanodots via ion beam sputtering of ultrathin gold thin film coatings on Si

PubMed Central

2011-01-01

Ion beam sputtering of ultrathin film Au coatings used as a physical catalyst for self-organization of Si nanostructures has been achieved by tuning the incident particle energy. This approach holds promise as a scalable nanomanufacturing parallel processing alternative to candidate nanolithography techniques. Structures of 11- to 14-nm Si nanodots are formed with normal incidence low-energy Ar ions of 200 eV and fluences above 2 × 1017 cm-2. In situ surface characterization during ion irradiation elucidates early stage ion mixing migration mechanism for nanodot self-organization. In particular, the evolution from gold film islands to the formation of ion-induced metastable gold silicide followed by pure Si nanodots formed with no need for impurity seeding. PMID:21711934

Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si

NASA Astrophysics Data System (ADS)

Harith, M. A.; Zhang, J. P.; Campisano, S. U.; Klaar, H.-J.

1987-01-01

The kinetics of Ni2Si growth from pure Ni and from Ni0.93V0.07 films on (111) and (100) silicon has been studied by the combination of He+ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4 5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.

Investigation of the {Fe}/{Si} interface and its phase transformations

NASA Astrophysics Data System (ADS)

Fanciulli, M.; Degroote, S.; Weyer, G.; Langouche, G.

1997-04-01

Thin 57Fe films (3-10 Å) have been grown by molecular beam epitaxy (MBE) on (7 × 7) reconstructed Si(111) and (2 × 1) reconstructed Si(001) surfaces and by e-gun evaporation on an H-terminated Si(111) surface. Conversion electron Mössbauer spectroscopy (CEMS) with high statistical accuracy and resolution allowed a detailed microscopic investigation of the silicide formation mechanism and of the structural phase transformations upon annealing.

Kinetics of silicide formation over a wide range of heating rates spanning six orders of magnitude

DOE Office of Scientific and Technical Information (OSTI.GOV)

Molina-Ruiz, Manel; Lopeandía, Aitor F.; Gonzalez-Silveira, Marta

Kinetic processes involving intermediate phase formation are often assumed to follow an Arrhenius temperature dependence. This behavior is usually inferred from limited data over narrow temperature intervals, where the exponential dependence is generally fully satisfied. However, direct evidence over wide temperature intervals is experimentally challenging and data are scarce. Here, we report a study of silicide formation between a 12 nm film of palladium and 15 nm of amorphous silicon in a wide range of heating rates, spanning six orders of magnitude, from 0.1 to 10{sup 5 }K/s, or equivalently more than 300 K of variation in reaction temperature. The calorimetric traces exhibit severalmore » distinct exothermic events related to interdiffusion, nucleation of Pd{sub 2}Si, crystallization of amorphous silicon, and vertical growth of Pd{sub 2}Si. Interestingly, the thickness of the initial nucleation layer depends on the heating rate revealing enhanced mass diffusion at the fastest heating rates during the initial stages of the reaction. In spite of this, the formation of the silicide strictly follows an Arrhenius temperature dependence over the whole temperature interval explored. A kinetic model is used to fit the calorimetric data over the complete heating rate range. Calorimetry is complemented by structural analysis through transmission electron microscopy and both standard and in-situ synchrotron X-ray diffraction.« less

Surface studies of barium and barium oxide on tungsten and its application to understanding the mechanism of operation of an impregnated tungsten cathode

NASA Technical Reports Server (NTRS)

Forman, R.

1976-01-01

Surface studies have been made of multilayer and monolayer films of barium and barium oxide on a tungsten substrate. The purpose of the investigation was to synthesize the surface conditions that exist on an activated impregnated tungsten cathode and obtain a better understanding of the mechanism of operation of such cathodes. The techniques employed in these measurements were Auger spectroscopy and work-function measurements. The results of this study show that the surface of an impregnated cathode is identical to that observed for a synthesized monolayer or partial monolayer of barium on oxidized tungsten by evaluating Auger spectra and work-function measurements. Data obtained from desorption studies of barium monolayers on a tungsten substrate in conjunction with Auger and work-function results have been interpreted to show that throughout most of its life an impreganated cathode has a partial monolayer, rather than a monolayer, of barium on its surface.

Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung

2013-12-15

Graphical abstract: - Highlights: • The resistive switching characteristics of WN{sub x} thin films. • Excellent CMOS compatibility WN{sub x} films as a resistive switching material. • Resistive switching mechanism revealed trap-controlled space charge limited conduction. • Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately ±2.2 V. The dominant conduction mechanisms at low and high resistancemore » states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.« less

METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

DOEpatents

Bowman, M.G.; Krikorian, N.H.

1961-10-01

A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, J.-G., E-mail: jglee36@kims.re.kr; Nagase, T.; Yasuda, H.

The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation.more » It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.« less

Dynamics of excimer laser ablation of thin tungsten films studied by fast photography

NASA Astrophysics Data System (ADS)

Toth, Zsolt; Hopp, Bela; Kantor, Zoltan; Ignacz, Ferenc; Szoerenyi, Tamas; Bor, Zsolt

1994-09-01

The time evolution of ablation and material transport during ArF excimer laser induced blow off of tungsten films from glass substrates is studied by fast photography using delayed dye laser pulses. The analysis of experimental results combined with heat flow calculations provides evidence that tungsten removal in the solid phase is the dominant mechanism in the 40 - 200 mJ/cm2 fluence domain, while partially inhomogeneous melting is observed between 200 and 800 mJ/cm2. In this fluence range, solid fragments and a halo consisting of molten droplets are observed indicating spatial separation of the two phases. The molten phase advances faster, forming a protective mist in front of the solid piece(s). At yet higher fluences (800 - 1000 mJ/cm2), a well separated solid phase could be recorded under the halo although model calculations suggest full vaporization of the layer. This unexpected phenomenon is explained by the optical shielding effect of the halo.

X Ray Mask Of Gold-Carbon Mixture Absorber On BCN Compound Substrate Fabricated By Plasma Processes

NASA Astrophysics Data System (ADS)

Aiyer, Chandrasekhar R.; Itoh, Satoshi; Yamada, Hitomi; Morita, Shinzo; Hattori, Shuzo

1988-06-01

X-ray mask fabrication based on BCN compound membrane and gold containing polymeric carbon ( Au-C ) absorber by totally dry processes is proposed. The Au-C films were depo-sited by plasma polymerization of propylene or styrene monomers and co-evaporation of gold. These films have 2 to 5 times higher etching rate than that of pure gold for 09 RIE, depending on the Au content. The stress in the films could be reduced to 1.9 E 7 N/m2 by annealing. The BCN films were deposited on silicon wafers by rf (13.56 MHz) plasma CVD with diborane, methane and nitrogen as source gases at typical deposition rate of 30 nm/min. The optical (633nm) and X ray (Pd L~) transparencies were nearly 80% for film thickness of 6 um. Patterning of Au-C was achieved by using tungsten as intermediate layer and PMMA electron beam resist. CF4 RIE was used to etch the tungsten layer which in turn acted as mask for the gold carbide 02 RIE. The process parameters and the characteristics of the Au-C and BCN films are presented.

The atomic nature of polymer-metal interactions in adhesion, friction and wear

NASA Technical Reports Server (NTRS)

Buckley, D. H.; Brainard, W. A.

1973-01-01

Adhesion experiments with polytetra-fluoroethylene (PTFE) and polyimide contacting tungsten indicate that the polymers bond chemically to the clean metal surface. Polymer chain fragments which transfer to the surface of tungsten in field ion microscopy adhesion studies are highly oriented. Auger emission spectroscopy of PTFE transfer films to various metal surfaces indicates that the PTFE is bonded to the metal surface via the carbon atom. With PTFE in sliding contact with different orientations of aluminum, metal orientation is found to influence surfaces in sliding. The lowest friction and least amount of surface damage is detected on the highest atomic density (111) plane. The friction process itself can initiate polymer film formation from simple organic molecules.

Analysis of optical and magnetooptical spectra of Fe{sub 5}Si{sub 3} and Fe{sub 3}Si magnetic silicides using spectral magnetoellipsometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyashchenko, S. A., E-mail: lsa@iph.krasn.ru; Popov, Z. I.; Varnakov, S. N.

The optical, magnetooptical, and magnetic properties of polycrystalline (Fe{sub 5}Si{sub 3}/SiO{sub 2}/Si(100)) and epitaxial Fe{sub 3}Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe{sub 5}Si{sub 3} is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe{sub 5}Si{sub 3} and Fe{sub 3}Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities ofmore » electron states (DOS) calculated from first principles for bulk Fe{sub 5}Si{sub 3} and Fe{sub 3}Si crystals.« less

Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

NASA Technical Reports Server (NTRS)

Grunthaner, P. J.; Grunthaner, F. J.; Scott, D. M.; Nicolet, M.-A.; Mayer, J. W.

1981-01-01

The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

Defense Small Business Innovation Research Program (SBIR). Abstracts of Phase II Awards. 1985.

DTIC Science & Technology

1985-01-01

SILICIDES : NEW SILICON COMPATIBLE ELECTRO-OPTIC MATERIALS TOPIC: 3 OFFICE: DARPA THE GOAL OF THIS WORK IS TO OBTAIN SINGLE CRYSTAL FILMS OF SEMI...CONSTITUENTS. CON- STITUENTS WITH IONIZATION POTENTIALS COMPARABLE TO THE WORK FUNCTION A ARE EVOLVED AS POSITIVE IONS (USUALLY SODIUM ATOMIC IONS FROM... SODIUM COMPOUND IMPURITIES). ARRIVAL OF A PARTICLE AT THE SURFACE CAUSES A BURST OF MANY IONS WHICH ARE DRAWN TO A NEARBY ION COLLECTOR ELECT- RODE

Metal silicides with energetic pulses

NASA Astrophysics Data System (ADS)

D'Anna, E.; Leggieri, G.; Luches, A.; Majni, G.; Nava, F.; Ottaviani, G.

1986-07-01

Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

Effect of Dispersants on Photochromic Behavior of Tungsten Oxide Nanoparticles in Methylcellulose.

PubMed

Yamazaki, Suzuko; Shimizu, Dai; Tani, Seiji; Honda, Kensuke; Sumimoto, Michinori; Komaguchi, Kenji

2018-05-29

Tungsten oxide-based photochromic films that change reversibly in air between colorless-transparent in the dark and dark blue under UV irradiation were prepared by using methylcellulose as a film matrix and various dispersants. Alpha-hydroxyl acid such as glycolic acid (GA) or glyceric acid (GlyA) is the best dispersant because it can make the film transparent by adding a small quantity much less than that of 3-hydroxypropionic acid or ethylene glycol. Fourier-transform infrared spectra and Raman spectra indicate that a strong interaction exists between WO 3 and GA or GlyA. The coloration and bleaching processes of the prepared films were investigated to clarify the effect of the dispersants and the moisture contents. The bleaching rate remarkably decreased in the films containing GA or GlyA but accelerated by increasing the contact with O 2 . Measurements of electron-spin resonance reveals that GA and GlyA as dispersants stabilize the W 5+ state. This paper shows that the coloring rate and the period for keeping the blue-colored state are tunable by changing the dispersants. The photochromic films containing α-hydroxyl acid as the dispersant have the potential for application as rewritable film on which information displayed with blue-colored state can be clearly readable for longer times compared with other dispersants.

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.; D'Anterroches, C.

1988-01-01

A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.

Ultrashort pulse generation in mode-locked erbium-doped fiber lasers with tungsten disulfide saturable absorber

NASA Astrophysics Data System (ADS)

Liu, Mengli; Liu, Wenjun; Pang, Lihui; Teng, Hao; Fang, Shaobo; Wei, Zhiyi

2018-01-01

Tungsten disulfide (WS2), as one of typical transition metal dichalcogenides with the characteristics of strong nonlinear polarization and wide bandgap, has been widely used in such fields as biology and optoelectronics. With the magnetron sputtering technique, the saturable absorber (SA) is prepared by depositing WS2 and Au film on the tapered fiber. The heat elimination and damage threshold can be improved for the WS2 SA with evanescent field interaction. Besides, the Au film is deposited on the surface of the WS2 film to improve their reliability and avoid being oxidized. The fabricated SA has a modulation depth of 14.79%. With this SA, we obtain a relatively stable mode-locked fiber laser with the pulse duration of 288 fs, the repetition rate of 41.4 MHz and the signal to noise ratio of 58 dB.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems

PubMed Central

Tian, Yanpei; Zhang, Sinong; Cui, Yali; Zheng, Yi

2017-01-01

In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film of SiO2 deposited on bulk tungsten. Numerical results presented here are obtained using formulae derived from dyadic Green’s function formalism and Maxwell-Garnett-Mie theory. We show that via the inclusion of tungsten nanoparticles, the thin layer of SiO2 acts like an effective medium that enhances selective radiative heat transfer for the photons above the band gap of GaSb. We analyze thermophotovoltaic (TPV) performance for various volume fractions of tungsten nanoparticles and thicknesses of SiO2. PMID:28773241

Development of a self-consistent free-form approach for studying the three-dimensional morphology of a thin film

NASA Astrophysics Data System (ADS)

Kozhevnikov, Igor V.; Peverini, Luca; Ziegler, Eric

2012-03-01

A method capable of extracting the depth distribution of the dielectric constant of a thin film deposited on a substrate and the three power spectral density (PSD) functions characterizing its roughness is presented. It is based on the concurrent analysis of x-ray reflectivity and scattering measurements obtained at different glancing angle values of the probe beam so that the effect of roughness is taken into account during reconstruction of the dielectric constant profile. Likewise, the latter is taken into account when determining the PSD functions describing the film roughness. This approach is using a numerical computation iterative procedure that demonstrated a rapid convergence for the overall set of data leading to a precise description of the three-dimensional morphology of a film. In the case of a tungsten thin film deposited by dc-magnetron sputtering onto a silicon substrate and characterized under vacuum, the analysis of the x-ray data showed the tungsten density to vary with depth from 95% of the bulk density at the top of the film to about 80% near the substrate, where the presence of an interlayer, estimated to be 0.7 nm thick, was evidenced. The latter may be due to diffusion and/or implantation of tungsten atoms into the silicon substrate. In the reconstruction of the depth profile, the resolution (minimum feature size correctly reconstructed) was estimated to be of the order of 0.4-0.5 nm. The depth distribution of the dielectric constant was shown to affect the roughness conformity coefficient extracted from the measured x-ray scattering distributions, while the deposition process increased the film roughness at high spatial frequency as compared to the virgin substrate. On the contrary, the roughness showed a weak influence on the dielectric constant depth profile extracted, as the sample used in our particular experiment was extremely smooth.

Substrate effect on the growth of Sn thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Suvankar; Menon, Krishnakumar S. R.

2018-05-01

Growth of tin (Sn) on Ag(001), Ag(111) and W(110) substrate has been studied at elevated temperatures (473 K) using x-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). For Sn growth on silver substrates, it is noticed that both Sn 3d and Ag 3d core-level spectra shift in the higher binding energy direction due to the formation of surface alloy with the substrate. In both cases, surface alloy finally transforms into bulk alloy finally reaching bulk Sn value. For Sn growth on W(110) only Sn 3d core-level spectra shift in the higher binding energy direction due to surface core-level effect whereas no shift for tungsten core-level was noticed confirming no alloy formation. Sn is incorporated into the surface of substrate silver layer by removing every alternate or every third silver atoms to relieve the surface tensile stress as confirmed by LEED. On the other hand, tungsten being hard, Sn forms an overlayer structure by sitting in different energetically available positions rather than forming an alloy as energetically also it is not possible. Sn forms alloy with soft substrate silver and form overlayer films with tungsten. These studies are important in understanding the growth mechanism of Sn films on metal substrates.

Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

NASA Astrophysics Data System (ADS)

Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

2018-01-01

This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

Interface Energy Coupling between β-tungsten Nanofilm and Few-layered Graphene

DOE PAGES

Han, Meng; Yuan, Pengyu; Liu, Jing; ...

2017-09-22

We report the thermal conductance induced by few-layered graphene (G) sandwiched between β-phase tungsten (β-W) films of 15, 30 and 40 nm thickness. Our differential characterization is able to distinguish the thermal conductance of β-W film and β-W/G interface. The cross-plane thermal conductivity (k) of β-W films is determined at 1.69~2.41 Wm -1K -1 which is much smaller than that of α-phase tungsten (174 Wm -1K -1). This small value is consistent with the large electrical resistivity reported for β-W in literatures and in this work. The β-W/β-W and β-W/G interface thermal conductance (GW/W and GW/G) are characterized and comparedmore » using multilayered β-W films with and without sandwiched graphene layers. The average GW/W is found to be at 280 MW m -2K -1. GW/G features strong variation from sample to sample, and has a lower-limit of 84 MW m -2K -1, taking into consideration of the uncertainties. This is attributed to possible graphene structure damage and variation during graphene transfer and W sputtering. The difference between G2W/G and GW/W uncovers the finite thermal resistance induced by the graphene layer. Compared with up-to-date reported graphene interface thermal conductance, the β-W/G interface is at the high end in terms of local energy coupling.« less

Interface Energy Coupling between β-tungsten Nanofilm and Few-layered Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Meng; Yuan, Pengyu; Liu, Jing

We report the thermal conductance induced by few-layered graphene (G) sandwiched between β-phase tungsten (β-W) films of 15, 30 and 40 nm thickness. Our differential characterization is able to distinguish the thermal conductance of β-W film and β-W/G interface. The cross-plane thermal conductivity (k) of β-W films is determined at 1.69~2.41 Wm -1K -1 which is much smaller than that of α-phase tungsten (174 Wm -1K -1). This small value is consistent with the large electrical resistivity reported for β-W in literatures and in this work. The β-W/β-W and β-W/G interface thermal conductance (GW/W and GW/G) are characterized and comparedmore » using multilayered β-W films with and without sandwiched graphene layers. The average GW/W is found to be at 280 MW m -2K -1. GW/G features strong variation from sample to sample, and has a lower-limit of 84 MW m -2K -1, taking into consideration of the uncertainties. This is attributed to possible graphene structure damage and variation during graphene transfer and W sputtering. The difference between G2W/G and GW/W uncovers the finite thermal resistance induced by the graphene layer. Compared with up-to-date reported graphene interface thermal conductance, the β-W/G interface is at the high end in terms of local energy coupling.« less

Vacuum Deposition From A Welding Torch

NASA Technical Reports Server (NTRS)

Poorman, R. M.

1993-01-01

Process derived from arc welding produces films of high quality. Modified gas/tungsten-arc welding process developed for use in outer space. Welding apparatus in process includes hollow tungsten electrode through which inert gas flows so arc struck between electrode and workpiece in vacuum of space. Offers advantages of fast deposition, possibility of applying directional impetus to flow of materials, very low pressure at surface being coated, and inert environment.

Microwave absorption properties of Ni/(C, silicides) nanocapsules

PubMed Central

2012-01-01

The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

Determination of magnetic anisotropy constants in Fe ultrathin film on vicinal Si(111) by anisotropic magnetoresistance

PubMed Central

Ye, Jun; He, Wei; Wu, Qiong; Liu, Hao-Liang; Zhang, Xiang-Qun; Chen, Zi-Yu; Cheng, Zhao-Hua

2013-01-01

The epitaxial growth of ultrathin Fe film on Si(111) surface provides an excellent opportunity to investigate the contribution of magnetic anisotropy to magnetic behavior. Here, we present the anisotropic magnetoresistance (AMR) effect of Fe single crystal film on vicinal Si(111) substrate with atomically flat ultrathin p(2 × 2) iron silicide as buffer layer. Owing to the tiny misorientation from Fe(111) plane, the symmetry of magnetocrystalline anisotropy energy changes from the six-fold to a superposition of six-fold, four-fold and a weakly uniaxial contribution. Furthermore, the magnitudes of various magnetic anisotropy constants were derived from torque curves on the basis of AMR results. Our work suggests that AMR measurements can be employed to figure out precisely the contributions of various magnetic anisotropy constants. PMID:23828508

Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

NASA Astrophysics Data System (ADS)

Houweling, Z. S.

2011-10-01

The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to nanocrystallites to closed crystallite films. The crystallinity, chemical structure, atomic composition, optical band gap and internal and external morphology of the WO3-x is studied. Second, the oxygen content of the WO3-x is lowered by the addition of hydrogen during the deposition. Heterogeneous films consisting of layers of various oxygen content result, corresponding to W/WO3-x, WO3/WO3-x configurations. When the air flow is continued upon cooling of the films, additionally WO3-x nanorods are formed on the external surfaces after the deposition. The reduction proceeds more effectively at both low water vapour pressures and at higher temperatures. Third, after synthesising WO3-x nanostructured depositions, atomic hydrogen is used with substrate temperatures of about 730°C to perform reduction. Nanostructured metallic tungsten depositions result consisting of nanofibers, nanocrystallites and closed crystallite films. Furthermore, ultrafine tungsten powder is obtained with particle sizes of 11 nm and very high specific surface areas of 21.5±2 m2·g-1. A novel method for the two-step synthesis of metallic nanostructured tungsten is additionally presented. Fourth, hexagonally ordered arrays of exotic homogeneous hierarchical WO3-x/WO3-x nanocacti are deposited. A novel method for the synthesis of exotic heterogeneous hierarchical WO3-x/WO3-y nanocacti is also presented. Such complex structures are a new foundation of novel applications and enhancements in the field of chromogenics.

Tungsten coating for improved wear resistance and reliability of microelectromechanical devices

DOEpatents

Fleming, James G.; Mani, Seethambal S.; Sniegowski, Jeffry J.; Blewer, Robert S.

2001-01-01

A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 .degree. C. in the presence of gaseous nitrogen trifluoride (NF.sub.3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF.sub.6) at an elevated temperature, preferably about 450.degree. C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

Deposition of tungsten metal by an immersion process

DOE PAGES

Small, Leo J.; Brumbach, Michael T.; Clem, Paul G.; ...

2017-03-23

A new multi-step, solution-phase method for the spontaneous deposition of tungsten from a room temperature ethereal solution is reported. This immersion process relies on the deposition of a sacrificial zinc coating which is galvanically displaced by the ether-mediated reduction of oxophilic WCl 6. Subsequent thermal treatment renders a crystalline, metallic tungsten film. The chemical evolution of the surface and formation of a complex intermediate tungsten species is characterized by X-ray diffraction, infrared spectroscopy, and X-ray photoelectron spectroscopy. Efficient metallic tungsten deposition is first characterized on a graphite substrate and then demonstrated on a functional carbon foam electrode. The resulting electrochemicalmore » performance of the modified electrode is interrogated with the canonical aqueous ferricyanide system. A tungsten-coated carbon foam electrode showed that both electrode resistance and overall electrochemical cell resistance were reduced by 50%, resulting in a concomitant decrease in redox peak separation from 1.902 V to 0.783 V. Furthermore, this process promises voltage efficiency gains in electrodes for energy storage technologies and demonstrates the viability of a new route to tungsten coating for technologies and industries where high conductivity and chemical stability are paramount.« less

Template-Free Mesoporous Electrochromic Films on Flexible Substrates from Tungsten Oxide Nanorods

DOE PAGES

Heo, Sungyeon; Kim, Jongwook; Ong, Gary K.; ...

2017-08-08

Low-temperature processed mesoporous nanocrystal thin films are platforms for fabricating functional composite thin films on flexible substrates. Using a random arrangement of anisotropic nanocrystals can be a facile solution to generate pores without templates. However, the tendency for anisotropic particles to spontaneously assemble into a compact structure must be overcome. Here in this paper, we present a method to achieve random networking of nanorods during solution phase deposition by switching their ligand-stabilized colloidal nature into a charge-stabilized nature by a ligand-stripping chemistry. Ligand-stripped tungsten suboxide (WO 2.72) nanorods result in uniform mesoporous thin films owing to repulsive electrostatic forces preventingmore » nanorods from densely packing. Porosity and pore size distribution of thin films are controlled by changing the aspect ratio of the nanorods. This template-free mesoporous structure, achieved without annealing, provides a framework for introducing guest components, therefore enabling our fabrication of inorganic nanocomposite electrochromic films on flexible substrates. Following infilling of niobium polyoxometalate clusters into pores and successive chemical condensation, a WO x–NbO x composite film is produced that selectively controls visible and near-infrared light transmittance without any annealing required. The composite shows rapid switching kinetics and can be stably cycled between optical states over 2000 times. This simple strategy of using anisotropic nanocrystals gives insight into mesoporous thin film fabrication with broader applications for flexible devices.« less

Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

NASA Astrophysics Data System (ADS)

Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

2015-12-01

Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

Template-Free Mesoporous Electrochromic Films on Flexible Substrates from Tungsten Oxide Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heo, Sungyeon; Kim, Jongwook; Ong, Gary K.

Low-temperature processed mesoporous nanocrystal thin films are platforms for fabricating functional composite thin films on flexible substrates. Using a random arrangement of anisotropic nanocrystals can be a facile solution to generate pores without templates. However, the tendency for anisotropic particles to spontaneously assemble into a compact structure must be overcome. Here in this paper, we present a method to achieve random networking of nanorods during solution phase deposition by switching their ligand-stabilized colloidal nature into a charge-stabilized nature by a ligand-stripping chemistry. Ligand-stripped tungsten suboxide (WO 2.72) nanorods result in uniform mesoporous thin films owing to repulsive electrostatic forces preventingmore » nanorods from densely packing. Porosity and pore size distribution of thin films are controlled by changing the aspect ratio of the nanorods. This template-free mesoporous structure, achieved without annealing, provides a framework for introducing guest components, therefore enabling our fabrication of inorganic nanocomposite electrochromic films on flexible substrates. Following infilling of niobium polyoxometalate clusters into pores and successive chemical condensation, a WO x–NbO x composite film is produced that selectively controls visible and near-infrared light transmittance without any annealing required. The composite shows rapid switching kinetics and can be stably cycled between optical states over 2000 times. This simple strategy of using anisotropic nanocrystals gives insight into mesoporous thin film fabrication with broader applications for flexible devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Small, Leo J.; Brumbach, Michael T.; Clem, Paul G.

A new multi-step, solution-phase method for the spontaneous deposition of tungsten from a room temperature ethereal solution is reported. This immersion process relies on the deposition of a sacrificial zinc coating which is galvanically displaced by the ether-mediated reduction of oxophilic WCl 6. Subsequent thermal treatment renders a crystalline, metallic tungsten film. The chemical evolution of the surface and formation of a complex intermediate tungsten species is characterized by X-ray diffraction, infrared spectroscopy, and X-ray photoelectron spectroscopy. Efficient metallic tungsten deposition is first characterized on a graphite substrate and then demonstrated on a functional carbon foam electrode. The resulting electrochemicalmore » performance of the modified electrode is interrogated with the canonical aqueous ferricyanide system. A tungsten-coated carbon foam electrode showed that both electrode resistance and overall electrochemical cell resistance were reduced by 50%, resulting in a concomitant decrease in redox peak separation from 1.902 V to 0.783 V. Furthermore, this process promises voltage efficiency gains in electrodes for energy storage technologies and demonstrates the viability of a new route to tungsten coating for technologies and industries where high conductivity and chemical stability are paramount.« less

Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Inhye; Park, Jingyu; Jeon, Heeyoung

In this study, the effects of a thin Ru interlayer on the thermal and morphological stability of NiSi have been investigated. Ru and Ni thin films were deposited sequentially to form a Ni/Ru/Si bilayered structure, without breaking the vacuum, by remote plasma atomic layer deposition (RPALD) on a p-type Si wafer. After annealing at various temperatures, the thermal stabilities of the Ni/Ru/Si and Ni/Si structures were investigated by various analysis techniques. The results showed that the sheet resistance of the Ni/Ru/Si sample was consistently lower compared to the Ni/Si sample over the entire temperature range. Although both samples exhibited themore » formation of NiSi{sub 2} phases at an annealing temperature of 800 °C, as seen with glancing angle x-ray diffraction, the peaks of the Ni/Ru/Si sample were observed to have much weaker intensities than those obtained for the Ni/Si sample. Moreover, the NiSi film with a Ru interlayer exhibited a better interface and improved surface morphologies compared to the NiSi film without a Ru interlayer. These results show that the phase transformation of NiSi to NiSi{sub 2} was retarded and that the smooth NiSi/Si interface was retained due to the activation energy increment for NiSi{sub 2} nucleation that is caused by adding a Ru interlayer. Hence, it can be said that the Ru interlayer deposited by RPALD can be used to control the phase transformation and physical properties of nickel silicide phases.« less

Li4SiO4-Based Artificial Passivation Thin Film for Improving Interfacial Stability of Li Metal Anodes.

PubMed

Kim, Ji Young; Kim, A-Young; Liu, Guicheng; Woo, Jae-Young; Kim, Hansung; Lee, Joong Kee

2018-03-14

An amorphous SiO 2 (a-SiO 2 ) thin film was developed as an artificial passivation layer to stabilize Li metal anodes during electrochemical reactions. The thin film was prepared using an electron cyclotron resonance-chemical vapor deposition apparatus. The obtained passivation layer has a hierarchical structure, which is composed of lithium silicide, lithiated silicon oxide, and a-SiO 2 . The thickness of the a-SiO 2 passivation layer could be varied by changing the processing time, whereas that of the lithium silicide and lithiated silicon oxide layers was almost constant. During cycling, the surface of the a-SiO 2 passivation layer is converted into lithium silicate (Li 4 SiO 4 ), and the portion of Li 4 SiO 4 depends on the thickness of a-SiO 2 . A minimum overpotential of 21.7 mV was observed at the Li metal electrode at a current density of 3 mA cm -2 with flat voltage profiles, when an a-SiO 2 passivation layer of 92.5 nm was used. The Li metal with this optimized thin passivation layer also showed the lowest charge-transfer resistance (3.948 Ω cm) and the highest Li ion diffusivity (7.06 × 10 -14 cm 2 s -1 ) after cycling in a Li-S battery. The existence of the Li 4 SiO 4 artificial passivation layer prevents the corrosion of Li metal by suppressing Li dendritic growth and improving the ionic conductivity, which contribute to the low charge-transfer resistance and high Li ion diffusivity of the electrode.

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

A Novel Variable Wide Bandgap Material for High Power, High Frequency Devices

DTIC Science & Technology

2011-01-13

temperature above 1300 °C caused the back side of the Si substrates to soften and form molybdenum silicides with the holder or to simply sublime...copper while Figures 7b, 7d, and 7f show the measured impurity levels of aluminum and sodium in the 4H-SiC substrate, RF sputtered film, and DC... sodium which are completely absent in the 4H- SiC substrate. These impurities are also attributed to the aluminum silicate shell that is evidently

Ferroelectric Tungsten Bronze Bulk Crystals and Epitaxial Thin Films for Electro-Optic Device Applications

DTIC Science & Technology

1984-02-01

110) film orientations. Electro - optic measurements on SBN:60 single crystals have shown a high value for r51 of 80 x 10 to the minus 12th power m/v...showing morphotropic boundary conditions with enhanced dielectric properties. Both systems look promising for future electro - optic development.

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

1999-01-01

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Jeremy Dunklin | NREL

Science.gov Websites

;In Situ Reduction of Gold Nanoparticles on Liquid Exfoliated Tungsten Disulfide Nanosheets," ;Asymmetric reduction of gold nanoparticles into thermoplasmonic polydimethylsiloxane thin films," ACS

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Pike, W. T.

1992-01-01

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Characterization and application of selective all-wet metallization of silicon

NASA Astrophysics Data System (ADS)

Uncuer, Muhammet; Koser, Hur

2012-01-01

We demonstrate selective, two-level metallization of silicon using electroless deposition of copper and gold. In this process, adhesion between the copper and silicon is improved with the formation of intermediary copper-silicide, and the gold layer protects copper from oxidation. The resistivity and residual stress of Au/Cu is 450 Ω nm (220 Ω nm annealed) and 56 MPa (tensile), respectively. These Au/Cu films allow a truly conformal and selective coating of high-aspect-ratio Si structures with good adhesion. We demonstrate the potential of these films in microswitches/relays, accelerometers and sensors by conformally coating the sidewalls of long (up to 1 mm in length), slender microbeams (5 µm × 5 µm) without inducing curvature.

Nanostructured Thin Films Obtained from Fischer Aminocarbene Complexes

PubMed Central

Lazo-Jiménez, Rosa E.; Ortega-Alfaro, M. Carmen; López-Cortés, José G.; Alvarez-Toledano, Cecilio; Chávez-Carvayar, José Á.; Ignés-Mullol, Jordi; González-Torres, Maykel; Carreón-Castro, Pilar

2016-01-01

The synthesis of four amphiphilic organometallic complexes with the general formula RC = M(CO)5NH(CH2)15CH3, where R is a ferrocenyl 2(a-b) or a phenyl 4(a-b) group as a donor moiety and a Fischer carbene of chromium (0) or tungsten (0) as an acceptor group, are reported. These four push-pull systems formed Langmuir (L) monolayers at the air-water interface, which were characterized by isotherms of surface pressure versus molecular area and compression/expansion cycles (hysteresis curves); Brewster angle microscopic images were also obtained. By using the Langmuir–Blodgett (LB) method, molecular monolayers were transferred onto glass substrates forming Z-type multilayers. LB films were characterized through ultraviolet-visible spectroscopy, atomic force microscopy and X-ray diffraction techniques. Results indicated that films obtained from 2b complex [(Ferrocenyl)(hexadecylamine)methylidene] pentacarbonyl tungsten (0) are the most stable and homogeneous; due to their properties, these materials may be incorporated into organic electronic devices. PMID:28773289

Electrochromic and optical properties of tungsten oxide films deposited with DC sputtering by introducing hydrogen.

PubMed

Chen, Hsi-Chao; Jan, Der-Jun; Luo, Yu-Siang; Huang, Kuo-Ting

2014-02-01

Research was undertaken to investigate the electrochromic and optical properties of tungsten oxide (WO3) films deposited by introducing hydrogen with a direct current (DC) and pulsed DC sputtering. The results show that WO3 films have optimum electrochromic properties at a hydrogen flow of 4 and 3 sccm for DC and pulsed DC, respectively. In the Raman spectra, the peak intensity increased with the increase of hydrogen flow at both 770  cm1 and 950  cm(-1) peaks, which resulted in bonds of W(6+)-O and W(6+)=O, respectively. Simultaneously, the transmittance (ΔT550  nm) variations were 65.6% and 64.4%, and the average transmittance (ΔT400-500  nm) variations were 56.7% and 56.4% for DC and pulsed DC, respectively. The bleached/colored ability of the cyclic voltammograms (CVs) was DC>pulsed DC, and the resistances of AC impedance were pulsed DC>DC.

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

NASA Astrophysics Data System (ADS)

Yoon, Kijeong; Song, Ohsung

2009-02-01

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leng, X.; Pereiro, J.; Strle, J.

Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO 3 films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, and a clear insulator-to-metal transition is observed. To clarify the doping mechanism, we have performed a series of incisive operando experiments, ruling out both a purely electronic effect (charge accumulation near the interface) and oxygen-related mechanisms. Wemore » propose instead that hydrogen intercalation is responsible for doping WO 3 into a highly conductive ground state and provide evidence that it can be described as a dense polaronic gas.« less

On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.

Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

NASA Technical Reports Server (NTRS)

Mahan, John E.

1990-01-01

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Preparation of VO2 thin film and its direct optical bit recording characteristics.

PubMed

Fukuma, M; Zembutsu, S; Miyazawa, S

1983-01-15

Vanadium dioxide (VO2) film which has nearly the same transition point as single crystal has been obtained by reactive evaporation of vanadium on glass and subsequent annealing in N2 gas. Relations between optical properties of V02 film and its preparation conditions are presented. We made optical direct bit recording on V02 film using a laser diode as the light source. The threshold recording energy and bit density are 2 mJ/cm 2 and 350 bits/mm, respectively. We also made tungsten doping to lower the V02 film transition temperature.

Evaluation of the Rod-Pinch Diode as a High-Resolution Source for Flashradiography at 2 to 4 MV

DTIC Science & Technology

2001-06-01

Research Laboratory, Washington, DC 20375 Abstract The ASTERIX generator is used to obtain the first evaluation of the rod-pinch electron -beam diode... dosimeters on a few shots are consistent with the RPL doses. Doses are measured at 36 cm from the tungsten tip, and inverse- square scaling is used to...Arrangement of the rod-pinch diode on ASTERIX. Radiation diagnostics include RPLs and TLDs for dose, tungsten rolled-edge and film for source size, and

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

NASA Astrophysics Data System (ADS)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Thickness and surface roughness study of co-sputtered nanostructured alumina/tungsten (Al2O3/W) thin films

NASA Astrophysics Data System (ADS)

Naveen, A.; Krishnamurthy, L.; Shridhar, T. N.

2018-04-01

Tungsten (W) and Alumina (Al2O3) thin films have been developed using co-sputtering technique on SS304, Copper (Cu) and Glass slides using Direct Current magnetron sputtering (DC) and Radio Frequency (RF) magnetron sputtering methods respectively. Central Composite Design (CCD) method approach has been adopted to determine the number of experimental plans for deposition and DC power, RF power and Argon gas flow rate have been input parameters, each at 5 levels for development of thin films. In this research paper, study has been carried out determine the optimized condition of deposition parameters for thickness and surface roughness of the thin films. Thickness and average Surface roughness in terms of nanometer (nm) have been characterized by thickness profilometer and atomic force microscopy respectively. The maximum and minimum average thickness observed to be 445 nm and 130 respectively. The optimum deposition condition for W/Al2O3 thin film growth was determined to be at 1000 watts of DC power and 800 watts of RF power, 20 minutes of deposition time, and almost 300 Standard Cubic Centimeter(SCCM) of Argon gas flow. It was observed that average roughness difference found to be less than one nanometer on SS substrate and one nanometer on copper approximately.

Spectroscopic analysis of temperature dependent growth of WO3 and W0.95Ti0.05O3 thin films

NASA Astrophysics Data System (ADS)

Yun, Young; Manciu, Felicia; William, Durrer; Howard, James; Ramana, Chintalapalle

2011-10-01

We present a comparative spectroscopic study of the morphology and composition of tungsten oxide WO3 and W0.95Ti0.05O3 thin films, grown by radio frequency magnetron reactive sputtering at substrate temperatures varied from room temperature (RT) to 500 ^oC, using Raman and X-ray photoelectron spectroscopy (XPS). The Raman results demonstrate the occurrence of a phase transformation from a monoclinic WO3 structure to an orthorhombic or tetragonal configuration in the W0.95Ti0.05O3 thin films. This remark is based on the observed shifting, with Ti doping, to lower frequencies of the Raman peaks corresponding to W-O-W stretching modes of WO3 at 806 and 711 cm-1, to 793 and 690 cm-1, respectively. Also, higher growth temperatures are required to obtain crystalline microstructure for Ti-doped WO3 films than for WO3 films. XPS data indicate that the doped material has a reduced WO3-x stoichiometry at the surface, with the presence of W^+6 and W^+5 tungsten oxidation states; this observation could also be related to the existence of a different structural phase of this material, corroborating with the Raman measurements.

High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

DTIC Science & Technology

2010-06-02

ceramics with silicide additives may be explained in the following ways: 1) metal oxide, for example Ta2O5, formed at oxidation of TaSi2, in the...practically monophase ones, possibly, the additives of corresponding metals in silicide powders were present in insignificant amounts. For...boride with zirconium silicide we prepared the mixtures with 20 vol. % of silicide , the latter being hot pressed in the temperature range of 1600

Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

DOEpatents

Ishida, Emi [Sunnyvale, CA

1999-08-10

A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

Deuterium trapping in tungsten

NASA Astrophysics Data System (ADS)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D irradiation. Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C+ irradiation; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten.

Photochromic Properties of Tungsten Oxide/Methylcellulose Composite Film Containing Dispersing Agents.

PubMed

Yamazaki, Suzuko; Ishida, Hiroki; Shimizu, Dai; Adachi, Kenta

2015-12-02

Tungsten oxide-based photochromic films which changed reversibly in air between colorless- transparent in the dark and dark blue under UV irradiation were prepared by using methylcellulose as a film matrix and polyols such as ethylene glycol (EG), propylene glycol (PG), and glycerin (Gly) as dispersing agents. Influence of the dispersing agents and water in the films on the photochromic behavior was systematically studied. Under UV irradiation, absorption bands around 640 and 980 nm increased and the coloring rate was the following order: Gly > EG > PG. An increase in the amounts of dispersing agents or water accelerated the coloring rate. By increasing the water content of the film, a new absorption peak appeared at ca. 775 nm and the Raman spectra indicated a shift of W-O-W stretching vibration to lower wavenumber which was due to the formation of hydrogen bonding. All absorption spectra were fit by three Lorentz functions, whose bands were ascribed to various packing of WO6 octahedra. After the light was turned off, the formation of W(5+) was stopped and bleaching occurred by the reaction with O2 in air to recover its original transparent state. We anticipate that the biodegradable photochromic films developed in this study can be applied in recyclable display medium and especially in detachable films for glass windows whose light transmission properties are changed by sunlight, i.e., for usage as an alternative of smart windows without applying voltage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benson, D.K.; Tracy, C.E.

The real and perceived risks of hydrogen fuel use, particularly in passenger vehicles, will require extensive safety precautions including hydrogen leak detection. Conventional hydrogen gas sensors require electrical wiring and may be too expensive for deployment in multiple locations within a vehicle. In this recently initiated project, we are attempting to develop a reversible, thin-film, chemochromic sensor that can be applied to the end of a polymer optical fiber. The presence of hydrogen gas causes the film to become darker. A light beam transmitted from a central instrument in the vehicle along the sensor fibers will be reflected from themore » ends of the fiber back to individual light detectors. A decrease in the reflected light signal will indicate the presence and concentration of hydrogen in the vicinity of the fiber sensor. The typical thin film sensor consists of a layer of transparent, amorphous tungsten oxide covered by a very thin reflective layer of palladium. When the sensor is exposed to hydrogen, a portion of the hydrogen is dissociated, diffuses through the palladium and reacts with the tungsten oxide to form a blue insertion compound, H{sub X}WO{sub 3}- When the hydrogen gas is no longer present, the hydrogen will diffuse out of the H{sub X}WO{sub 3} and oxidize at the palladium/air interface, restoring the tungsten oxide film and the light signal to normal. The principle of this detection scheme has already been demonstrated by scientists in Japan. However, the design of the sensor has not been optimized for speed of response nor tested for its hydrogen selectivity in the presence of hydrocarbon gases. The challenge of this project is to modify the basic sensor design to achieve the required rapid response and assure sufficient selectivity to avoid false readings.« less

CHARACTERISTICS OF ANODIC AND CORROSION FILMS ON ZIRCONIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misch, R.D.

1960-05-01

Zirconium anodizes similarly to tungsten in respect to the change of interference colors with applied voltage. However, the oxide layer on tungsten cannot reach as great a thickness. Hafnium does not anodize in the same way as zirconium but is similar to tantalum. By measuring the interference color and capacitative thicknesses on zirconium (Grades I and III) and a 2.5 wt.% tin ailoy, the film was found to grow less rapidly in terms of capacitance than in terms of iaterference colors. This was interpreted to mean that cracks develop in the oxide as it thickens. The effect was most pronouncedmore » on Grade III zirconium and least pronounced on the tin alloy. The reduction in capacitative thickness was especially noticeable when white oxide appeared. Comparative measurements on Grade I zirconium and 2.5 wt.% tin alloy indicated that the thickness of the oxide film on the tin alloy (after 16 hours in water) increased more rapidly with temperature than the film on zirconium. Tin is believed to act in ways to counteract the tendency of the oxide to form cracks, and to produce vacancies which promote ionic diffusion. (auth)« less

Determining the virtual surface in the thermal evaporation process of magnesium fluoride from a tungsten boat for different deposition rates, to be used in precision optical components

NASA Astrophysics Data System (ADS)

Tejada Esteves, A.; Gálvez de la Puente, G.

2013-11-01

Vacuum thermal evaporation has, for some time now, been the principal method for the deposition of thin films, given, among other aspects, its simplicity, flexibility, and relatively low cost. Therefore, the development of models attempting to predict the deposition patterns of given thin film materials in different locations of a vacuum evaporation chamber are arguably important. With this in mind, we have designed one of such models for the thermal evaporation process of magnesium fluoride (MgF2), a common material used in optical thin films, originating from a tungsten boat source. For this we took several deposition samples in glass slide substrates at different locations in the vacuum chamber, considering as independent variables the mean deposition rate, and the axial and vertical distances of the source to the substrate. After a careful analysis by matrix method from the spectral transmittance data of the samples, while providing as output data the spectral transmittance, as well as the physical thickness of the films, both as functions of the aforementioned variables, the virtual surface of the source was determined.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

PubMed

Polley, Craig M; Clarke, Warrick R; Simmons, Michelle Y

2011-10-03

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

Manipulating mammalian cell morphologies using chemical-mechanical polished integrated circuit chips

NASA Astrophysics Data System (ADS)

Moussa, Hassan I.; Logan, Megan; Siow, Geoffrey C.; Phann, Darron L.; Rao, Zheng; Aucoin, Marc G.; Tsui, Ting Y.

2017-12-01

Tungsten chemical-mechanical polished integrated circuits were used to study the alignment and immobilization of mammalian (Vero) cells. These devices consist of blanket silicon oxide thin films embedded with micro- and nano-meter scale tungsten metal line structures on the surface. The final surfaces are extremely flat and smooth across the entire substrate, with a roughness in the order of nanometers. Vero cells were deposited on the surface and allowed to adhere. Microscopy examinations revealed that cells have a strong preference to adhere to tungsten over silicon oxide surfaces with up to 99% of cells adhering to the tungsten portion of the surface. Cells self-aligned and elongated into long threads to maximize contact with isolated tungsten lines as thin as 180 nm. The orientation of the Vero cells showed sensitivity to the tungsten line geometric parameters, such as line width and spacing. Up to 93% of cells on 10 μm wide comb structures were aligned within ± 20° of the metal line axis. In contrast, only 22% of cells incubated on 0.18 μm comb patterned tungsten lines were oriented within the same angular interval. This phenomenon is explained using a simple model describing cellular geometry as a function of pattern width and spacing, which showed that cells will rearrange their morphology to maximize their contact to the embedded tungsten. Finally, it was discovered that the materials could be reused after cleaning the surfaces, while maintaining cell alignment capability.

Manipulating mammalian cell morphologies using chemical-mechanical polished integrated circuit chips.

PubMed

Moussa, Hassan I; Logan, Megan; Siow, Geoffrey C; Phann, Darron L; Rao, Zheng; Aucoin, Marc G; Tsui, Ting Y

2017-01-01

Tungsten chemical-mechanical polished integrated circuits were used to study the alignment and immobilization of mammalian (Vero) cells. These devices consist of blanket silicon oxide thin films embedded with micro- and nano-meter scale tungsten metal line structures on the surface. The final surfaces are extremely flat and smooth across the entire substrate, with a roughness in the order of nanometers. Vero cells were deposited on the surface and allowed to adhere. Microscopy examinations revealed that cells have a strong preference to adhere to tungsten over silicon oxide surfaces with up to 99% of cells adhering to the tungsten portion of the surface. Cells self-aligned and elongated into long threads to maximize contact with isolated tungsten lines as thin as 180 nm. The orientation of the Vero cells showed sensitivity to the tungsten line geometric parameters, such as line width and spacing. Up to 93% of cells on 10 μm wide comb structures were aligned within ± 20° of the metal line axis. In contrast, only ~22% of cells incubated on 0.18 μm comb patterned tungsten lines were oriented within the same angular interval. This phenomenon is explained using a simple model describing cellular geometry as a function of pattern width and spacing, which showed that cells will rearrange their morphology to maximize their contact to the embedded tungsten. Finally, it was discovered that the materials could be reused after cleaning the surfaces, while maintaining cell alignment capability.

Manipulating mammalian cell morphologies using chemical-mechanical polished integrated circuit chips

PubMed Central

Moussa, Hassan I.; Logan, Megan; Siow, Geoffrey C.; Phann, Darron L.; Rao, Zheng; Aucoin, Marc G.; Tsui, Ting Y.

2017-01-01

Abstract Tungsten chemical-mechanical polished integrated circuits were used to study the alignment and immobilization of mammalian (Vero) cells. These devices consist of blanket silicon oxide thin films embedded with micro- and nano-meter scale tungsten metal line structures on the surface. The final surfaces are extremely flat and smooth across the entire substrate, with a roughness in the order of nanometers. Vero cells were deposited on the surface and allowed to adhere. Microscopy examinations revealed that cells have a strong preference to adhere to tungsten over silicon oxide surfaces with up to 99% of cells adhering to the tungsten portion of the surface. Cells self-aligned and elongated into long threads to maximize contact with isolated tungsten lines as thin as 180 nm. The orientation of the Vero cells showed sensitivity to the tungsten line geometric parameters, such as line width and spacing. Up to 93% of cells on 10 μm wide comb structures were aligned within ± 20° of the metal line axis. In contrast, only ~22% of cells incubated on 0.18 μm comb patterned tungsten lines were oriented within the same angular interval. This phenomenon is explained using a simple model describing cellular geometry as a function of pattern width and spacing, which showed that cells will rearrange their morphology to maximize their contact to the embedded tungsten. Finally, it was discovered that the materials could be reused after cleaning the surfaces, while maintaining cell alignment capability. PMID:29152017

Advanced smart tungsten alloys for a future fusion power plant

NASA Astrophysics Data System (ADS)

Litnovsky, A.; Wegener, T.; Klein, F.; Linsmeier, Ch; Rasinski, M.; Kreter, A.; Tan, X.; Schmitz, J.; Mao, Y.; Coenen, J. W.; Bram, M.; Gonzalez-Julian, J.

2017-06-01

The severe particle, radiation and neutron environment in a future fusion power plant requires the development of advanced plasma-facing materials. At the same time, the highest level of safety needs to be ensured. The so-called loss-of-coolant accident combined with air ingress in the vacuum vessel represents a severe safety challenge. In the absence of a coolant the temperature of the tungsten first wall may reach 1200 °C. At such a temperature, the neutron-activated radioactive tungsten forms volatile oxide which can be mobilized into atmosphere. Smart tungsten alloys are being developed to address this safety issue. Smart alloys should combine an acceptable plasma performance with the suppressed oxidation during an accident. New thin film tungsten-chromium-yttrium smart alloys feature an impressive 105 fold suppression of oxidation compared to that of pure tungsten at temperatures of up to 1000 °C. Oxidation behavior at temperatures up to 1200 °C, and reactivity of alloys in humid atmosphere along with a manufacturing of reactor-relevant bulk samples, impose an additional challenge in smart alloy development. First exposures of smart alloys in steady-state deuterium plasma were made. Smart tungsten-chroimium-titanium alloys demonstrated a sputtering resistance which is similar to that of pure tungsten. Expected preferential sputtering of alloying elements by plasma ions was confirmed experimentally. The subsequent isothermal oxidation of exposed samples did not reveal any influence of plasma exposure on the passivation of alloys.

Interface Properties of Wide Bandgap Semiconductor Structures

DTIC Science & Technology

1994-06-01

resistive than silicides and their chemistry with 126I I Si-based materials more complex. However, in a series of studies, M. 0. Aboelfotoh et al. have...clarification of these issues. CuGe contacts on Ge:GaN and Mg:GaN. To date, the properties of Cu3Ge films have been documented by Aboelfotoh et al., but the...Martin, V. Malhotra, and J. E. Mahan, J. Vac. Sci. Technol. B 3, 836 (1985). 25. L. Krusin-Elbaum and M. 0. Aboelfotoh , Appl. Phys. Lett. 58(12), 1341

Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires.

PubMed

Li, Jian; Kirkwood, Robert A; Baker, Luke J; Bosworth, David; Erotokritou, Kleanthis; Banerjee, Archan; Heath, Robert M; Natarajan, Chandra M; Barber, Zoe H; Sorel, Marc; Hadfield, Robert H

2016-06-27

We present low temperature nano-optical characterization of a silicon-on-insulator (SOI) waveguide integrated SNSPD. The SNSPD is fabricated from an amorphous Mo₈₃Si₁₇ thin film chosen to give excellent substrate conformity. At 350 mK, the SNSPD exhibits a uniform photoresponse under perpendicular illumination, corresponding to a maximum system detection efficiency of approximately 5% at 1550 nm wavelength. Under these conditions 10 Hz dark count rate and 51 ps full width at half maximum (FWHM) timing jitter is observed.

Formation of atomically smooth epitaxial metal films on a chemically reactive interface: Mg on Si(111)

NASA Astrophysics Data System (ADS)

Özer, Mustafa M.; Weitering, Hanno H.

2013-07-01

Deposition of Mg on Si(111)7 × 7 produces an epitaxial magnesium silicide layer. Under identical annealing conditions, the thickness of this Mg2Si(111) layer increases with deposition amount, reaching a maximum of 4 monolayer (ML) and decreasing to ˜3 ML at higher Mg coverage. Excess Mg coalesces into atomically flat, crystalline Mg(0001) films. This surprising growth mode can be attributed to the accidental commensurability of the Mg(0001), Si(111), and Mg2Si(111) interlayer spacing and the concurrent minimization of in-plane Si mass transfer and domain-wall energies. The commensurability of the interlayer spacing defines a highly unique solid-phase epitaxial growth process capable of producing trilayer structures with atomically abrupt interfaces and atomically smooth surface morphologies.

Insulator to metal transition in WO 3 induced by electrolyte gating

DOE PAGES

Leng, X.; Pereiro, J.; Strle, J.; ...

2017-07-03

Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO 3 films by electrolyte gating using both ionic liquids and polymer electrolytes. We are able to tune the resistivity of the gated film by more than five orders of magnitude, and a clear insulator-to-metal transition is observed. To clarify the doping mechanism, we have performed a series of incisive operando experiments, ruling out both a purely electronic effect (charge accumulation near the interface) and oxygen-related mechanisms. Wemore » propose instead that hydrogen intercalation is responsible for doping WO 3 into a highly conductive ground state and provide evidence that it can be described as a dense polaronic gas.« less

Structural, optical and electrical properties of WO3-Ag nanocomposites for the electro-optical devices

NASA Astrophysics Data System (ADS)

Najafi-Ashtiani, Hamed; Bahari, Ali; Gholipour, Samira; Hoseinzadeh, Siamak

2018-01-01

The composites of tungsten trioxide and silver are synthesized by sodium tungstate and silver nitrate precursors. The structural properties of composite coatings are studied by FTIR, XRD, and XPS. The FTIR analysis of synthesized composite powder corroborated the bonds between tungsten and oxygen elements in WO3 molecules. Furthermore, the XRD spectra show crystalline nature while particle size analysis that is investigated by X-powder software shows average particle size of 24 and 25 nm for samples. The structural analyses show that the addition of silver dopant does not change the stoichiometry of tungsten trioxide and only increase the size of the aggregation in the films. Furthermore, these films have an average approximate roughness of about 10.7, 13.1 and 14.2 nm for sample 1, 2 and 3, respectively. The real and imaginative parts of permittivity are investigated using LCR meter in the frequency range 1 Hz-10 GHz. The optical spectra of composite coatings are characterized in the 300-900 nm wavelength range and the calculation of optical band gaps of them exhibited the directly allowed transition with the values of 3.8 and 3.85 eV. From UV-visible spectroscopy studies, the absorption coefficient of the composite thin films is determined to be of the order of 105 cm- 1 and the obtained refraction and extinction indexes indicated normal dispersive coatings. Due to their optical and electrical properties, the synthesized composite material is a promising candidate for use in electro-optical applicants.

Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

PubMed

Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok

2011-07-01

In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.

Effect of Chemistry and Particle Size on the Performance of Calcium Disilicide Primers. Part 1 - Synthesis of Calcium Silicide (CaSi2) by Rotary Atomization

DTIC Science & Technology

2010-02-01

Metallurgist. 45, 267, 2001. 10. Dodero, M. "Electrolytic Preparation of Calcium Silicide ," Compt. Rend.. 198, 1593, 1934. 11. Dodero, M...Allqem. Chem.. 242, 117, 1939. 13. Yamaguchi, Y. and Hayakawa, Y., "The Preparation of Calcium Silicide by Reacting Solid Silicon Carbide and...SYNTHESIS OF CALCIUM SILICIDE (CaSi2) BY ROTARY ATOMIZATION Paul E. Anderson Kin Yee Eugene Homentowski Gartung Cheng Neha Mehta Gary Chen U.S

Monolithic porous magnesium silicide.

PubMed

Hayati-Roodbari, N; Berger, R J F; Bernardi, J; Kinge, S; Hüsing, N; Elsaesser, M S

2017-07-11

Macroporous magnesium silicide monoliths were successfully prepared by a two-step synthesis procedure. The reaction of gaseous magnesium vapor with macro-/mesoporous silicon, which was generated from hierarchically organized meso-/macroporous silica by a magnesiothermic reduction reaction, resulted in monolithic magnesium silicide with a cellular, open macroporous structure. By adjusting the reaction conditions, such as experimental set-up, temperature and time, challenges namely loss of porosity or phase purity of Mg 2 Si were addressed and monolithic magnesium silicide with a cellular network builtup was obtained.

Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Durcan, Chris A.; Balsano, Robert; LaBella, Vincent P., E-mail: vlabella@albany.edu

2015-06-28

The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over a period of 21 days to observe changes in the interface electrostatics. Initially, the average spectrum is fit to a Schottky barrier height of 0.71 eV, and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV, and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at themore » interface, which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period.« less

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.

PubMed

Ratajczak, J; Łaszcz, A; Czerwinski, A; Katcki, J; Phillipp, F; Van Aken, P A; Reckinger, N; Dubois, E

2010-03-01

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700 degrees C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500 degrees C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700 degrees C.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

PubMed

Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

2008-09-17

Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

PubMed Central

2011-01-01

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

Plasmonic-Electronic Transduction

DTIC Science & Technology

2012-01-31

including metal silicides (Pt-, Pd-, Ni-, W- silicides ), semimetals (Sb, Bi, graphite), doped-semiconductors (Si, CuInSe), and conducting polymers... silicides and doped silicon,” J. W. Cleary, R. E. Peale, D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, W.R. Buchwald

One-Step Formation of WO3-Loaded TiO2 Nanotubes Composite Film for High Photocatalytic Performance

PubMed Central

Lee, Wai Hong; Lai, Chin Wei; Abd Hamid, Sharifah Bee

2015-01-01

High aspect ratio of WO3-loaded TiO2 nanotube arrays have been successfully synthesized using the electrochemical anodization method in an ethylene glycol electrolyte containing 0.5 wt% ammonium fluoride in a range of applied voltage of 10–40 V for 30 min. The novelty of this research works in the one-step formation of WO3-loaded TiO2 nanotube arrays composite film by using tungsten as the cathode material instead of the conventionally used platinum electrode. As compared with platinum, tungsten metal has lower stability, forming dissolved ions (W6+) in the electrolyte. The W6+ ions then move towards the titanium foil and form a coherent deposit on titanium foil. By controlling the oxidation rate and chemical dissolution rate of TiO2 during the electrochemical anodization, the nanotubular structure of TiO2 film could be achieved. In the present study, nanotube arrays were characterized using FESEM, EDAX, XRD, as well as Raman spectroscopy. Based on the results obtained, nanotube arrays with average pore diameter of up to 74 nm and length of 1.6 µm were produced. EDAX confirmed the presence of tungsten element within the nanotube arrays which varied in content from 1.06 at% to 3.29 at%. The photocatalytic activity of the nanotube arrays was then investigated using methyl orange degradation under TUV 96W UV-B Germicidal light irradiation. The nanotube with the highest aspect ratio, geometric surface area factor and at% of tungsten exhibited the highest photocatalytic activity due to more photo-induced electron-hole pairs generated by the larger surface area and because WO3 improves charge separation, reduces charge carrier recombination and increases charge carrier lifetime via accumulation of electrons and holes in the two different metal oxide semiconductor components.

Improved high-temperature silicide coatings

NASA Technical Reports Server (NTRS)

Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

1969-01-01

Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

NASA Astrophysics Data System (ADS)

Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

2016-12-01

The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

Low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-infrared applications.

PubMed

Cho, Sang-Yeon; Soref, Richard A

2009-06-15

We report low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-IR applications. The composite modes in silicide ribbon waveguides offer a low-loss and highly confined mode profile, giving excellent plasmon waveguiding for long-wavelength applications. The calculated propagation loss of the composite long-range surface-plasmon polariton mode at a wavelength of 100 microm is 2.18 dB/cm with a mode height of less than 30 microm. The results presented provide important design guidelines for silicide/Si plasmon waveguides.

Manganese silicide nanowires on Si(001).

PubMed

Liu, H J; Owen, J H G; Miki, K; Renner, Ch

2011-05-04

A method for promoting the growth of manganese silicide nanowires on Si(001) at 450 °C is described. The anisotropic surface stress generated by bismuth nanolines blocks the formation of embedded structures and stabilizes the nucleation of manganese silicide islands which grow in a preferred direction, forming nanowires with a band gap of approximately 0.6 eV, matching the reported band gap of MnSi(1.7). This method may also provide a means to form silicide nanowires of other metals where they do not otherwise form. © 2011 IOP Publishing Ltd

Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications.

PubMed

Wu, Yen-Ting; Huang, Chun-Wei; Chiu, Chung-Hua; Chang, Chia-Fu; Chen, Jui-Yuan; Lin, Ting-Yi; Huang, Yu-Ting; Lu, Kuo-Chang; Yeh, Ping-Hung; Wu, Wen-Wei

2016-02-10

Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Stress analysis in tungsten and Si 3N 4 coated silicon wafers

NASA Astrophysics Data System (ADS)

Ogilvie, Robert E.; Nicolich, Jeffrey

2009-08-01

A paper by G. Gerald Stoney [Gerald Stoney, The Tension of Metallic Films Deposited by Electrolysis, Proc. R. Soc. Lond. A 82 (1909) 172-175], entitled "The Tension of Metallic Films deposited by Electrolysis," was presented to the Royal Society of London by the Hon. C. A. Parsons. It was well known at that time that films deposited electrolytically were liable to peel off when exceeding a certain thickness. After examining many thin Steel rules of thickness d which have a thin, t, deposit of Nickel, which curved the Rule to a radius r. Taking the moments about the point b for the steel, Stoney then arrived at the following equation where the integral must be equal to zero; ∫d0(E/r)(b-x)xdx=0sothat b=2/3d From the solution of Eq. (1), we obtain the important fact that the neutral plane is at 2/3 the thickness of the rule from film surface. This also implies that the absolute value of the stress on the film side is twice that on the opposite side of the steel rule. The important point is that if the absolute stress in the silicon on the film side is twice that on the opposite side then the position of the neutral plane must be at 2/3 d. The purpose of this paper is to show that the neutral plane in silicon wafers, which have a thin film (~ 3 μm) of tungsten or Si 3N 4 is indeed at 2/3 the thickness of the wafer.

A Room Temperature Nitric Oxide Gas Sensor Based on a Copper-Ion-Doped Polyaniline/Tungsten Oxide Nanocomposite

PubMed Central

Wang, Shih-Han; Shen, Chi-Yen; Su, Jian-Ming; Chang, Shiang-Wen

2015-01-01

The parts-per-billion-level nitric oxide (NO) gas sensing capability of a copper-ion-doped polyaniline/tungsten oxide nanocomposite (Cu2+/PANI/WO3) film coated on a Rayleigh surface acoustic wave device was investigated. The sensor developed in this study was sensitive to NO gas at room temperature in dry nitrogen. The surface morphology, dopant distribution, and electric properties were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy mapping, and Hall effect measurements, respectively. The Cu2+/PANI/WO3 film exhibited high NO gas sensitivity and selectivity as well as long-term stability. At 1 ppb of NO, a signal with a frequency shift of 4.3 ppm and a signal-to-noise ratio of 17 was observed. The sensor exhibited distinct selectivity toward NO gas with no substantial response to O2, NH3 and CO2 gases. PMID:25811223

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films.

PubMed

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; Hensley, Dale K; Gray, Stephen K; Gupta, Mool C

2015-02-15

Nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control over the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO2 layer. Applications for this structure are explored, including a promising application for solar thermal energy systems.

Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw; Chang, Wei-Cheng; Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw

Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding themore » W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.« less

Effects of SiO 2 overlayer at initial growth stage of epitaxial Y 2O 3 film growth

NASA Astrophysics Data System (ADS)

Cho, M.-H.; Ko, D.-H.; Choi, Y. G.; Lyo, I. W.; Jeong, K.; Whang, C. N.

2000-12-01

We investigated the dependence of the Y 2O 3 film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y 2O 3 film was formed on 1.5 nm thick SiO 2 layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y 2O 3 were provided by the reaction between SiO 2 and Y at the initial growth stage. The SiO 2 layer known to hinder crystal growth is found to enhance the nucleation of Y 2O 3, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO 2 layer is the key to the high-quality epitaxial growth of Y 2O 3 on Si.

Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

PubMed

Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

2013-12-01

We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

PubMed

Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

2011-07-01

Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

PubMed

Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

2015-10-01

We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

Formation of iron disilicide on amorphous silicon

NASA Astrophysics Data System (ADS)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski <111> silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Cathodic electrodeposition of mixed molybdenum tungsten oxides from peroxo-polymolybdotungstate solutions.

PubMed

Kondrachova, Lilia; Hahn, Benjamin P; Vijayaraghavan, Ganesh; Williams, Ryan D; Stevenson, Keith J

2006-12-05

Mixed molybdenum tungsten trioxide films of varying stoichiometry (MoxW1 - xO3, 0 < x < 1) were prepared by cathodic electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous peroxo-polymolybdotungstate solutions. Electrochemical quartz crystal microbalance (EQCM), cyclic voltammetry, and chronocoulometry were used to gain insight into the electrodeposition mechanism. The compositional and structural properties were characterized for MoxW1 - xO3 films deposited at intermediate potentials (-0.35 V vs Ag/AgCl) and sintered at 250 degrees C using energy-dispersive spectroscopy, X-ray diffraction, and Raman spectroscopy. These studies reveal that films consist of homogeneously mixed MoxW1 - xO3, with an enriched Mo content ranging in composition from 0.4 < x < 0.7 depending upon the mol % Mo present in the deposition solution. Chronoamperometry and spectroelectrochemical measurements were conducted to estimate lithium ion diffusion coefficients and coloration efficiencies for the mixed metal oxide films in 1 M LiClO4/propylene carbonate. The subtle interplay between structural and compositional properties due to the uniform mixing of Mo and W oxide components shows that electrochromic and lithium ion transport properties are moderately enhanced relative to those of single-component WO3 and MoO3 and demonstrate improved structural stability over pure MoO3 polymorphs during electrochemical cycling.

PLD deposition of tungsten carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects

NASA Astrophysics Data System (ADS)

Cappelli, E.; Bellucci, A.; Orlando, S.; Trucchi, D. M.; Mezzi, A.; Valentini, V.

2013-08-01

Tungsten carbide, WC, contacts behave as very reliable Schottky contacts for opto-electronic diamond devices. Diamond is characterized by superior properties in high-power, high frequency and high-temperature applications, provided that thermally stable electrode contacts will be realized. Ohmic contacts can be easily achieved by using carbide-forming metals, while is difficult to get stable Schottky contacts at elevated temperatures, due to the interface reaction and/or inter-diffusion between metals and diamond. Novel type of contacts, made of tungsten carbide, WC, seem to be the best solution, for their excellent thermal stability, high melting point, oxidation and radiation resistance and good electrical conductivity. Our research was aimed at using pulsed laser deposition for WC thin film deposition, optimizing experimental parameters, to obtain a final device characterized by excellent electronic properties, as a detector for radiation in deep UV or as X-ray dosimeter. We deposited our films by laser ablation from a target of pure WC, using different reaction conditions (i.e., substrate heating, vacuum or reactive atmosphere (CH4/Ar), RF plasma activated), to optimize both the stoichiometry of the film and its structure. Trying to obtain a material with the best electronic response, we used also two sources of laser radiation for target ablation, i.e., nano-second pulsed excimer laser ArF, and ultra-short fs Ti:Sapphire laser. The structure and chemical aspects have been evaluated by Raman and X-ray photoelectron spectroscopy (XPS), while the dosimeter photodiode response has been tested by the I-V measurements, under soft X-ray irradiation.

All-alkoxide synthesis of strontium-containing metal oxides

DOEpatents

Boyle, Timothy J.

2001-01-01

A method for making strontium-containing metal-oxide ceramic thin films from a precursor liquid by mixing a strontium neo-pentoxide dissolved in an amine solvent and at least one metal alkoxide dissolved in a solvent, said at least one metal alkoxide selected from the group consisting of alkoxides of calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, yttrium, lanthanum, antimony, chromium and thallium, depositing a thin film of the precursor liquid on a substrate, and heating the thin film in the presence of oxygen at between 550 and 700.degree. C.

High efficiency thin-film GaAs solar cells

NASA Technical Reports Server (NTRS)

Stirn, R. J.

1977-01-01

Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizingmore » controllable high-performance stable transistors.« less

Reflectance of evaporated rhenium and tungsten films in the vacuum ultraviolet from 300 to 2000 A.

NASA Technical Reports Server (NTRS)

Cox, J. T.; Hass, G.; Ramsey, J. B.; Hunter, W. R.

1972-01-01

Discussion of the dependence of the reflectance of Re and W on the substrate temperature during deposition, film thickness, and aging during exposure to air. Re and W of 99.99% purity were evaporated with a 6-kW fine-focused electron gun and deposited on glass and fused quartz plates of various temperatures ranging from 40 to 500 C. With Re, films of highest reflectance were obtained by evaporation onto unheated substrates, whereas with W, heating of the substrate greatly increased the reflectance of the deposited films. For both metals, the reflectance losses during extended exposure to air remained rather small, indicating that the oxide films formed on both film materials at room temperature were very thin.

Synergistic effect of sunlight induced photothermal conversion and H2O2 release based on hybridized tungsten oxide gel for cancer inhibition

NASA Astrophysics Data System (ADS)

Wang, Cong; Gao, Yibo; Gao, Xinghua; Wang, Hua; Tian, Jingxuan; Wang, Li; Zhou, Bingpu; Ye, Ziran; Wan, Jun; Wen, Weijia

2016-10-01

A highly efficient photochromic hydrogel was successfully fabricated via casting precursor, which is based on amorphous tungsten oxide and poly (ethylene oxide)-block-poly (propylene oxide)-block-poly (ethylene oxide). Under simulated solar illumination, the hydrogel has a rapid and controlled temperature increasing ratio as its coloration degree. Localized electrons in the amorphous tungsten oxide play a vital role in absorption over a broad range of wavelengths from 400 nm to 1100 nm, encompassing the entire visible light and infrared regions in the solar spectrum. More importantly, the material exhibits sustainable released H2O2 induced by localized electrons, which has a synergistic effect with the rapid surface temperature increase. The amount of H2O2 released by each film can be tuned by the light irradiation, and the film coloration can indicate the degree of oxidative stress. The ability of the H2O2-releasing gels in vitro study was investigated to induce apoptosis in melanoma tumor cells and NIH 3T3 fibroblasts. The in vivo experimental results indicate that these gels have a greater healing effect than the control in the early stages of tumor formation.

Synergistic effect of sunlight induced photothermal conversion and H2O2 release based on hybridized tungsten oxide gel for cancer inhibition

PubMed Central

Wang, Cong; Gao, Yibo; Gao, Xinghua; Wang, Hua; Tian, Jingxuan; Wang, Li; Zhou, Bingpu; Ye, Ziran; Wan, Jun; Wen, Weijia

2016-01-01

A highly efficient photochromic hydrogel was successfully fabricated via casting precursor, which is based on amorphous tungsten oxide and poly (ethylene oxide)-block-poly (propylene oxide)-block-poly (ethylene oxide). Under simulated solar illumination, the hydrogel has a rapid and controlled temperature increasing ratio as its coloration degree. Localized electrons in the amorphous tungsten oxide play a vital role in absorption over a broad range of wavelengths from 400 nm to 1100 nm, encompassing the entire visible light and infrared regions in the solar spectrum. More importantly, the material exhibits sustainable released H2O2 induced by localized electrons, which has a synergistic effect with the rapid surface temperature increase. The amount of H2O2 released by each film can be tuned by the light irradiation, and the film coloration can indicate the degree of oxidative stress. The ability of the H2O2-releasing gels in vitro study was investigated to induce apoptosis in melanoma tumor cells and NIH 3T3 fibroblasts. The in vivo experimental results indicate that these gels have a greater healing effect than the control in the early stages of tumor formation. PMID:27775086

Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

NASA Astrophysics Data System (ADS)

Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

2016-04-01

Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiao; Zhang, Bingsen; Li, Chuang

Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1})more » produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.« less

Molecular dynamics simulations of hydrogen bombardment of tungsten carbide surfaces

NASA Astrophysics Data System (ADS)

Träskelin, P.; Juslin, N.; Erhart, P.; Nordlund, K.

2007-05-01

The interaction between energetic hydrogen and tungsten carbide (WC) is of interest both due to the use of hydrogen-containing plasmas in thin-film manufacturing and due to the presence of WC in the divertor of fusion reactors. In order to study this interaction, we have carried out molecular dynamics simulations of the low-energy bombardment of deuterium impinging onto crystalline as well as amorphous WC surfaces. We find that prolonged bombardment leads to the formation of an amorphous WC surface layer, regardless of the initial structure of the WC sample. Loosely bound hydrocarbons, which can erode by swift chemical sputtering, are formed at the surface. Carbon-terminated surfaces show larger sputtering yields than tungsten-terminated surfaces. In both cumulative and noncumulative simulations, C is seen to sputter preferentially. Implications for mixed material erosion in ITER are discussed.

Thermally Deposited Palladium-Tungsten Carbide and Platinum-Tungsten Carbide Counter Electrodes for a High Performance Dye-Sensitized Solar Cell Based on Organic T-/T₂ Electrolyte.

PubMed

Towannang, Madsakorn; Thiangkaew, Anongnad; Maiaugree, Wasan; Ratchaphonsaenwong, Kunthaya; Jarernboon, Wirat; Pimanpang, Samuk; Amornkitbamrung, Vittaya

2018-02-01

Tungsten carbide (WC) particles (~1 μm) were dispersed in DI water and dropped onto conductive glass. The resulting WC films were used as dye-sensitized solar cell (DSSC) counter electrodes. The performance of the WC DSSC based on the organic thiolate/disulfide (T-/T2) electrolyte was ~0.78%. The cell efficiency was greatly improved after decorating palladium (Pd) or platinum (Pt) nanoparticles on WC particles with a promising efficiency of ~2.15% for Pd-WC DSSC and ~4.62% for Pt-WC DSSC. The efficiency improvement of the composited (Pd-WC and Pt-WC) cells is attributed to co-functioning catalysts, the large electrode interfacial area and a low charge-transfer resistance at the electrolyte/counter electrode interface.

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.

PubMed

Li, Y Z; Wang, Z L; Luo, H; Wang, Y Z; Xu, W J; Ran, G Z; Qin, G G; Zhao, W Q; Liu, H

2010-07-19

A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (approximately 10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V(2)O(5)/ NPB/ CBP: (ppy)(2)Ir(acac)/ Bphen/ Bphen: Cs(2)CO(3)/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V(2)O(5)/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.

Metallic rare-earth silicide nanowires on silicon surfaces.

PubMed

Dähne, Mario; Wanke, Martina

2013-01-09

The formation, atomic structure, and electronic properties of self-assembled rare-earth silicide nanowires on silicon surfaces were studied by scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. Metallic dysprosium and erbium silicide nanowires were observed on both the Si(001) and Si(557) surfaces. It was found that they consist of hexagonal rare-earth disilicides for both surface orientations. On Si(001), the nanowires are characterized by a one-dimensional band structure, while the electronic dispersion is two-dimensional for the nanowires formed on Si(557). This behavior is explained by the different orientations of the hexagonal c axis of the silicide leading to different conditions for the carrier confinement. By considering this carrier confinement it is demonstrated how the one-dimensional band structure of the nanowires on Si(001) can be derived from the two-dimensional one of the silicide monolayer on Si(111).

Magnetic Binary Silicide Nanostructures.

PubMed

Goldfarb, Ilan; Cesura, Federico; Dascalu, Matan

2018-05-02

In spite of numerous advantageous properties of silicides, magnetic properties are not among them. Here, the magnetic properties of epitaxial binary silicide nanostructures are discussed. The vast majority of binary transition-metal silicides lack ferromagnetic order in their bulk-size crystals. Silicides based on rare-earth metals are usually weak ferromagnets or antiferromagnets, yet both groups tend to exhibit increased magnetic ordering in low-dimensional nanostructures, in particular at low temperatures. The origin of this surprising phenomenon lies in undercoordinated atoms at the nanostructure extremities, such as 2D (surfaces/interfaces), 1D (edges), and 0D (corners) boundaries. Uncompensated superspins of edge atoms increase the nanostructure magnetic shape anisotropy to the extent where it prevails over its magnetocrystalline counterpart, thus providing a plausible route toward the design of a magnetic response from nanostructure arrays in Si-based devices, such as bit-patterned magnetic recording media and spin injectors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Process for producing an aggregate suitable for inclusion into a radiation shielding product

DOEpatents

Lessing, Paul A.; Kong, Peter C.

2000-01-01

The present invention is directed to methods for converting depleted uranium hexafluoride to a stable depleted uranium silicide in a one-step reaction. Uranium silicide provides a stable aggregate material that can be added to concrete to increase the density of the concrete and, consequently, shield gamma radiation. As used herein, the term "uranium silicide" is defined as a compound generically having the formula U.sub.x Si.sub.y, wherein the x represents the molecules of uranium and the y represent the molecules of silicon. In accordance with the present invention, uranium hexafluoride is converted to a uranium silicide by contacting the uranium hexafluoride with a silicon-containing material at a temperature in a range between about 1450.degree. C. and about 1750.degree. C. The stable depleted uranium silicide is included as an aggregate in a radiation shielding product, such as a concrete product.

Heusler alloys with bcc tungsten seed layers for GMR junctions

NASA Astrophysics Data System (ADS)

Frost, William; Hirohata, Atsufumi

2018-05-01

We demonstrate that polycrystalline Co2FeSi Heusler alloys films can be grown with perpendicular anisotropy without the use of an MgO interface. By heating the substrate to 400 °C prior to deposition and using a tungsten seed layer perpendicular anisotropy is induced in the Heusler layer. This is maintained as the thickness of the Co2FeSi is increased up to 12.5 nm. The layers with thickness dependent coercivity can be implemented into a giant magnetoresistance structure leading to spin-valve behaviour without the need for an exchange biased pinned layer.

Core-shell chromium silicide-silicon nanopillars: a contact material for future nanosystems.

PubMed

Chang, Mu-Tung; Chen, Chih-Yen; Chou, Li-Jen; Chen, Lih-Juann

2009-11-24

Chromium silicide nanostructures are fabricated inside silicon nanopillars grown by the vapor-liquid-solid mechanism. The remarkable field-emission behavior of these nanostructures results from extensive improvement of carrier transport due to the reduced energy barrier between the metal and semiconductor layers. The results warrant consideration of chromium silicide as a potentially important contact material in future nanosystems.

The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

NASA Astrophysics Data System (ADS)

Munro, T. C.; Gleeson, B.

1996-12-01

The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl3 and a thin inner layer of TiAl2, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1100 °C showed that the interdiffusion between the aluminide coating and the γ-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi2, TiSi, and Ti5Si4, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the γ-TiAl ahead of the silicide/γ-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

Effects of Processing Variables on Tantalum Nitride by Reactive-Ion-Assisted Magnetron Sputtering Deposition

NASA Astrophysics Data System (ADS)

Wei, Chao‑Tsang; Shieh, Han‑Ping D.

2006-08-01

The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N2/Ar flux ratios in view of the hardness and critical load of TaN and Ta1-xWxNy films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxNy films led significant increases in hardness, critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W+Ta)]=0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N2/Ar flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces.

PubMed

Hong, Ie-Hong; Liao, Yung-Cheng; Tsai, Yung-Feng

2013-11-05

The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process.

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

PubMed Central

2013-01-01

The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process. PMID:24188092

Mechanistic, kinetic, and processing aspects of tungsten chemical mechanical polishing

NASA Astrophysics Data System (ADS)

Stein, David

This dissertation presents an investigation into tungsten chemical mechanical polishing (CMP). CMP is the industrially predominant unit operation that removes excess tungsten after non-selective chemical vapor deposition (CVD) during sub-micron integrated circuit (IC) manufacture. This work explores the CMP process from process engineering and fundamental mechanistic perspectives. The process engineering study optimized an existing CMP process to address issues of polish pad and wafer carrier life. Polish rates, post-CMP metrology of patterned wafers, electrical test data, and synergy with a thermal endpoint technique were used to determine the optimal process. The oxidation rate of tungsten during CMP is significantly lower than the removal rate under identical conditions. Tungsten polished without inhibition during cathodic potentiostatic control. Hertzian indenter model calculations preclude colloids of the size used in tungsten CMP slurries from indenting the tungsten surface. AFM surface topography maps and TEM images of post-CMP tungsten do not show evidence of plow marks or intergranular fracture. Polish rate is dependent on potassium iodate concentration; process temperature is not. The colloid species significantly affects the polish rate and process temperature. Process temperature is not a predictor of polish rate. A process energy balance indicates that the process temperature is predominantly due to shaft work, and that any heat of reaction evolved during the CMP process is negligible. Friction and adhesion between alumina and tungsten were studied using modified AFM techniques. Friction was constant with potassium iodate concentration, but varied with applied pressure. This corroborates the results from the energy balance. Adhesion between the alumina and the tungsten was proportional to the potassium iodate concentration. A heuristic mechanism, which captures the relationship between polish rate, pressure, velocity, and slurry chemistry, is presented. In this mechanism, the colloid reacts with the chemistry of the slurry to produce active sites. These active sites become inactive by removing tungsten from the film. The process repeats when then inactive sites are reconverted to active sites. It is shown that the empirical form of the heuristic mechanism fits all of the data obtained. The mechanism also agrees with the limiting cases that were investigated.

Electrochemical way of molybdenum extraction from the Bimetallic systems of Mo-W

NASA Astrophysics Data System (ADS)

Kudreeva, L. K.; Nauryzbaev, M. K.; Kurbatov, A. P.; Kamysbaev, D. H.; Adilbekova, A. O.; Mukataeva, Z. S.

2015-12-01

Electrochemical dissolution of molybdenum and tungsten was investigated in water- dimethylsulfoxide (DMSO) media at different concentrations of lithium chloride and magnesium perchlorate. The terms of efficient extraction of molybdenum from bimetallic systems of Mo-W have been determined. The polarization curves of the electrooxidation of molybdenum in the solution of 0.25 M LiCl in the DMSO at the different rates of rotations and the scan rate equal to 50 mV/s were obtained. In the presence of the addition of water at the potential of 0.1-0.75 V the small area of polarizability occurs, then with increasing potentials above 1.5 V there is a sharp increase of the oxidation current. Comparison of the current values of anodic dissolution of molybdenum and tungsten showed that the rate of anodic dissolution of molybdenum significantly exceeds the rate of anodic dissolution of tungsten. In the case of molybdenum, the dissolution process is limited by diffusion, in the case of tungsten - by the passive film formation on the electrode surface.

Fundamental Studies and Isolation Strategies for Metal Compound Nanoclusters

DTIC Science & Technology

2009-02-28

probe nanocluster structure, bonding and stability, metal oxide, carbide and silicide clusters with up to 50 atoms were investigated with mass...transition metal compounds (carbides, oxides, silicides ) that are expected to have high stability, an essential property for their isolation...Metal carbide, oxide and silicide nanoclusters are studied in the size range from a few up to about 300 atoms. New infrared laser spectroscopy

The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

DTIC Science & Technology

2013-10-01

infrared applications; SiGeSn heterostructure photonics; group IV plasmonics with silicides , germanicides, doped Si, Ge or GeSn; Franz-Keldysh...SPP waveguide in which localized silicide or germanicide “conductors” are introduced to give local plasmonic confinement. Therefore, guided-wave...reconfigurable integrated optoelectronics, electro-optical logic in silicon, silicides for group IV plasmonics, reviews of third-order nonlinear optical

Kinetic manipulation of silicide phase formation in Si nanowire templates.

PubMed

Chen, Yu; Lin, Yung-Chen; Zhong, Xing; Cheng, Hung-Chieh; Duan, Xiangfeng; Huang, Yu

2013-08-14

The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investigated due to their significance in microelectronics. Applying high-quality silicides as contacts in nanoscale silicon (Si) devices has caught considerable attention recently for their potential in improving and introducing new functions in nanodevices. However, nucleation and diffusion mechanisms are found to be very different in one-dimensional (1-D) nanostructures, and thus the phase manipulation of silicides is yet to be achieved there. In this work, we report kinetic phase modulations to selectively enhance or hinder the growth rates of targeted nickel (Ni) silicides in a Si nanowire (NW) and demonstrate that Ni31Si12, δ-Ni2Si, θ-Ni2Si, NiSi, and NiSi2 can emerge as the first contacting phase at the silicide/Si interface through these modulations. First, the growth rates of silicides are selectively tuned through template structure modifications. It is demonstrated that the growth rate of diffusion limited phases can be enhanced in a porous Si NW due to a short diffusion path, which suppresses the formation of interface limited NiSi2. In addition, we show that a confining thick shell can be applied around the Si NW to hinder the growth of the silicides with large volume expansion during silicidation, including Ni31Si12, δ-Ni2Si, and θ-Ni2Si. Second, a platinum (Pt) interlayer between the Ni source and the Si NW is shown to effectively suppress the formation of the phases with low Pt solubility, including the dominating NiSi2. Lastly, we show that with the combined applications of the above-mentioned approaches, the lowest resistive NiSi phase can form as the first phase in a solid NW with a Pt interlayer to suppress NiSi2 and a thick shell to hinder Ni31Si12, δ-Ni2Si, and θ-Ni2Si simultaneously. The resistivity and maximum current density of NiSi agree reasonably to reported values.

Determining thin film properties by fitting optical transmittance

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.; Cogan, S. F.

1990-08-01

The optical transmission spectra of rf sputtered tungsten oxide films on glass substrates were modeled to determine absorption edge behavior, film thickness, and index of refraction. Removal of substrate reflection and absorption phenomena from the experimental spectra allowed direct examination of thin film optical characteristics. The interference fringe pattern allows determination of the film thickness and the dependence of the real index of refraction on wavelength. Knowledge of the interference fringe behavior in the vicinity of the absorption edge was found essential to unambiguous determination of the optical band gap. In particular, the apparently random deviations commonly observed in the extrapolation of as-acquired data are eliminated by explicitly considering interference fringe phenomena. The multivariable optimization fitting scheme employed allows air-film-substrate reflection losses to be compensated without making reflectance measurements.

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp

2015-09-28

Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thinmore » film transistors.« less

Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

NASA Astrophysics Data System (ADS)

Lee, Sol Kyu; Seok, Ki Hwan; Chae, Hee Jae; Lee, Yong Hee; Han, Ji Su; Jo, Hyeon Ah; Joo, Seung Ki

2017-03-01

We report a novel method to reduce source and drain (S/D) resistances, and to form a lightly doped layer (LDL) of bottom-gate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). For application in driving TFTs, which operate under high drain voltage condition, poly-Si TFTs are needed in order to attain reliability against hot-carriers as well as high field-effect mobility (μFE). With an additional doping on the p+ Si layer, sheet resistance on S/D was reduced by 37.5% and an LDL was introduced between the channel and drain. These results contributed to not only a lower leakage current and gate-induced drain leakage, but also high immunity of kink-effect and hot-carrier stress. Furthermore, the measured electrical characteristics exhibited a steep subthreshold slope of 190 mV/dec and high μFE of 263 cm2/Vs.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Silicide formation process of Pt added Ni at low temperature: Control of NiSi2 formation

NASA Astrophysics Data System (ADS)

Ikarashi, Nobuyuki; Masuzaki, Koji

2011-03-01

Transmission electron microscopy (TEM) and ab initio calculations revealed that the Ni-Si reaction around 300 °C is significantly changed by adding Pt to Ni. TEM analysis clarified that NiSi2 was formed in a reaction between Ni thin film (˜1 nm) and Si substrate, while NiSi was formed when Pt was added to the Ni film. We also found that the Ni-adamantane structure, which acts as a precursor for NiSi2 formation around the reaction temperature, was formed in the former reaction but was significantly suppressed in the latter reaction. Theoretical calculations indicated that Pt addition increased stress at the Ni-adamantane structure/Si-substrate interface. The increase in interface stress caused by Pt addition should raise the interface energy to suppress the Ni-adamantane structure formation, leading to NiSi2 formation being suppressed.

Self-Powered Wireless Sensors

NASA Technical Reports Server (NTRS)

Dynys, Fred; Sayir, Ali

2008-01-01

NASA's integrated vehicle health management (IVHM) program offers the potential to improve aeronautical safety, reduce cost and improve performance by utilizing networks of wireless sensors. Development of sensor systems for engine hot sections will provide real-time data for prognostics and health management of turbo-engines. Sustainable power to embedded wireless sensors is a key challenge for prolong operation. Harvesting energy from the environment has emerged as a viable technique for power generation. Thermoelectric generators provide a direct conversion of heat energy to electrical energy. Micro-power sources derived from thermoelectric films are desired for applications in harsh thermal environments. Silicon based alloys are being explored for applications in high temperature environments containing oxygen. Chromium based p-type Si/Ge alloys exhibit Seebeck coefficients on the order of 160 micro V/K and low thermal conductance of 2.5 to 5 W/mK. Thermoelectric properties of bulk and thin film silicides will be discussed

NUCLEAR FUEL MATERIAL

DOEpatents

Goeddel, W.V.

1962-06-26

An improved method is given for making the carbides of nuclear fuel material. The metal of the fuel material, which may be a fissile and/or fertile material, is transformed into a silicide, after which the silicide is comminuted to the desired particle size. This silicide is then carburized at an elevated temperature, either above or below the melting point of the silicide, to produce an intimate mixture of the carbide of the fuel material and the carbide of silicon. This mixture of the fuel material carbide and the silicon carbide is relatively stable in the presence of moisture and does not exhibit the highly reactive surface condition which is observed with fuel material carbides made by most other known methods. (AEC)

Superconductivity of ternary silicide with the AlB(2)-type structure Sr(Ga(0.37),Si(0.63))(2).

PubMed

Imai, M; Abe, E; Ye, J; Nishida, K; Kimura, T; Honma, K; Abe, H; Kitazawa, H

2001-08-13

A ternary silicide Sr(Ga(0.37),Si(0.63))(2) was synthesized by a floating zone method. Electron diffraction and powder x-ray diffraction measurements indicate that the silicide has the AlB(2)-type structure with the lattice constants of a = 4.1427(6) A and c = 4.7998(9) A, where Si and Ga atoms are arranged in a chemically disordered honeycomb lattice and Sr atoms are inercalated between them. The silicide is isostructural with the high-temperature superconductor MgB(2) reported recently. Electrical resistivity and dc magnetization measurements revealed that it is a type-II superconductor with onset temperature of 3.5 K.

Tungsten Incorporation into Gallium Oxide: Crystal Structure, Surface and Interface Chemistry, Thermal Stability and Interdiffusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rubio, E. J.; Mates, T. E.; Manandhar, S.

Tungsten (W) incorporated gallium oxide (Ga2O3) (GWO) thin films were deposited by radio-frequency magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying sputtering power applied to the W-target in order to achieve variable W-content (0-12 at%) into Ga2O3 while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-deposited and annealed GWO films were evaluated as a function of W-content. The structural and chemical analyses indicate that the samples deposited without any W-incorporation are stoichiometric, nanocrystalline Ga2O3 films, which crystallize in β-phase monoclinic structure. While GWO films alsomore » crystallize in monoclinic β-Ga2O3 phase, W-incorporation induces surface amorphization as revealed by structural studies. The chemical valence state of Ga ions probed by X-ray photoelectron spectroscopic (XPS) analyses is characterized by the highest oxidation state i.e., Ga3+. No changes in Ga chemical state are noted for variable W-incorporation in the range of 0-12 at%. Rutherford backscattering spectrometry (RBS) analyses indicate the uniform distribution of W-content in the GWO films. However, XPS analyses indicate the formation of mixed valence states for W ions, which may be responsible for surface amorphization in GWO films. GWO films were stable up to 900 oC, at which point thermally induced secondary phase (W-oxide) formation was observed. A transition to mesoporous structure coupled with W interdiffusion occurs due to thermal annealing as derived from the chemical analyses at the GWO films’ surface as well as depth-profiling towards the GWO-Si interface. A model has been formulated to account for the mechanism of W-incorporation, thermal stability and interdiffusion via pore formation in GWO films.« less

Dynamic SEM wear studies of tungsten carbide cermets. [friction and wear experiments

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Buckley, D. H.

1975-01-01

Dynamic friction and wear experiments were conducted in a scanning electron microscope. The wear behavior of pure tungsten carbide and composite with 6 and 15 weight percent cobalt binder was examined, and etching of the binder was done to selectively determine the role of the binder in the wear process. Dynamic experiments were conducted as the tungsten carbide (WC) and bonded WC cermet surfaces were transversed by a 50 micron radiused diamond stylus. These studies show that the predominant wear process in WC is fracture initiated by plastic deformation, and the wear of the etched cermets is similar to pure WC. The presence of the cobalt binder reduces both friction and wear. The cementing action of the cobalt reduces granular separation, and promotes a dense polished layer because of its low shear strength film-forming properties. The wear debris generated from unetched surface is approximately the same composition as the bulk.

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.Q.; Mayer, J.W.

1989-03-01

Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobaltmore » compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.« less

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction.

PubMed

Hsu, Hsun-Feng; Huang, Wan-Ru; Chen, Ting-Hsuan; Wu, Hwang-Yuan; Chen, Chun-An

2013-05-10

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

PubMed Central

2013-01-01

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

Methodology, Technical Approach and Measurement Techniques for Testing of TPM Thermal Protection Materials in IPM Plasmatrons

DTIC Science & Technology

2000-04-01

system, 8 - experiments on a study of boundary layer spectrum infrared window). before boiling of glass- silicide coating. This simple 3. SAMPLES AND...dependencies of surface temperature of tested materials and make conclusions concerned joint gllass- silicide coating and anode power of generator...obtained using test stagnation point configuration. glass- silicide coating vs anode power of HF-generator. Temperature peak at constant power

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Atwani, Osman; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Gonderman, Sean

We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for amore » time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.« less

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridharan, Kumar; Mariani, Robert; Bai, Xianming

Zirconium-alloy fuel claddings have been used successfully in Light Water Reactors (LWR) for over four decades. However, under high temperature accident conditions, zirconium-alloys fuel claddings exhibit profuse exothermic oxidation accompanied by release of hydrogen gas due to the reaction with water/steam. Additionally, the ZrO 2 layer can undergo monoclinic to tetragonal to cubic phase transformations at high temperatures which can induce stresses and cracking. These events were unfortunately borne out in the Fukushima-Daiichi accident in in Japan in 2011. In reaction to such accident, protective oxidation-resistant coatings for zirconium-alloy fuel claddings has been extensively investigated to enhance safety margins inmore » accidents as well as fuel performance under normal operation conditions. Such surface modification could also beneficially affect fuel rod heat transfer characteristics. Zirconium-silicide, a candidate coating material, is particularly attractive because zirconium-silicide coating is expected to bond strongly to zirconium-alloy substrate. Intermetallic compound phases of zirconium-silicide have high melting points and oxidation of zirconium silicide produces highly corrosion resistant glassy zircon (ZrSiO 4) and silica (SiO 2) which possessing self-healing qualities. Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi 2 coating) during clad quenching experiments is discussed in detail.« less

Oxygen chemisorption and oxide formation on Ni silicide surfaces at room temperature

NASA Astrophysics Data System (ADS)

Valeri, S.; Del Pennino, U.; Lomellini, P.; Sassaroli, P.

1984-10-01

Auger spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) have been used in a comparative study of the room temperature oxidation of Ni silicides of increasing silicon content, from Ni3Si to NiSi2. The results were compared with those for the oxidation of pure Si and Ni. All suicide surfaces in the exposure range between 0.2 and 104 L follow two-step oxidation kinetics: the first step is characterized by an oxygen uptake rate higher than in the second one. Attention was focused on the oxygen induced modifications of metal and silicon AES and XPS spectra in silicides, which are indicative of changes in the local electronic structure and in the chemical bonding. In general oxygen bonds with silicon leaving the metal unaffected; however, at high exposures, characteristic feature of the Ni-oxygen bonds appear in the Ni(MVV) Auger line of the Ni-rich silicides. The presence of Ni atoms enhances considerably the Si oxidation process in silicides with respect to pure Si, in terms both of a higher Si oxidation state and a higher oxygen uptake; this enhancement is stronger in Ni-rich silicides than in Si-rich silicides. The oxygen induced contributions in the Si(LVV) Auger line show structures at 76 and 83 eV, and those in the Si 2p photoemission spectra show binding energy shifts between -1 and -3.8 eV; we conclude that the oxidation products are mainly silicon suboxides, like Si2O3 and SiO; only on Ni3 Si at 104 L, a significant contribution of SiO2 was found. The Ni catalytic effect on Si oxidation has been discussed in terms of the suicide heat of formation, of the breaking of the silicon sp3 configuration in silicides and of the metal atom dissociative effect on the O2 molecule.

Initial Assessment of Environmental Barrier Coatings for the Prometheus Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

M. Frederick

2005-12-15

Depending upon final design and materials selections, a variety of engineering solutions may need to be considered to avoid chemical degradation of components in a notional space nuclear power plant (SNPP). Coatings are one engineered approach that was considered. A comprehensive review of protective coating technology for various space-reactor structural materials is presented, including refractory metal alloys [molybdenum (Mo), tungsten (W), rhenium (Re), tantalum (Ta), and niobium (Nb)], nickel (Ni)-base superalloys, and silicon carbide (Sic). A summary description of some common deposition techniques is included. A literature survey identified coatings based on silicides or iridium/rhenium as the primary methods formore » environmental protection of refractory metal alloys. Modified aluminide coatings have been identified for superalloys and multilayer ceramic coatings for protection of Sic. All reviewed research focused on protecting structural materials from extreme temperatures in highly oxidizing conditions. Thermodynamic analyses indicate that some of these coatings may not be protective in the high-temperature, impure-He environment expected in a Prometheus reactor system. Further research is proposed to determine extensibility of these coating materials to less-oxidizing or neutral environments.« less

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films

DOE PAGES

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; ...

2015-02-06

For this study, nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control overmore » the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO 2 layer. Finally, applications for this structure are explored, including a promising application for solar thermal energy systems.« less

Intrinsic evolutions of dielectric function and electronic transition in tungsten doping Ge{sub 2}Sb{sub 2}Te{sub 5} phase change films discovered by ellipsometry at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, S.; Ding, X. J.; Zhang, J. Z.

2015-02-02

Tungsten (W) doping effects on Ge{sub 2}Sb{sub 2}Te{sub 5} (GSTW) phase change films with different concentrations (3.2, 7.1, and 10.8%) have been investigated by variable-temperature spectroscopic ellipsometry. The dielectric functions from 210 K to 660 K have been evaluated with the aid of Tauc-Lorentz and Drude dispersion models. The analysis of Tauc gap energy (E{sub g}) and partial spectral weight integral reveal the correlation between optical properties and local structural change. The order degree increment and chemical bond change from covalent to resonant should be responsible for band gap narrowing and electronic transition enhancement during the phase change process. It is foundmore » that the elevated crystalline temperature for GSTW can be related to improved disorder degree. Furthermore, the shrinkage of E{sub g} for GSTW should be attributed to the enhanced metallicity compared with undoped GST.« less

Ferroelectric tungsten bronze bulk crystals and epitaxial thin films for electro-optic device applications

NASA Astrophysics Data System (ADS)

Neurgaonkar, R. R.; Cross, L. E.

1984-02-01

SBN:50 and SBN:60 crystals have now been grown with improved optical quality using the Czochralski technique with automatic diameter control. The liquid phase epitaxial (LPE) growth of SBN:50 on SBN substrates has also been successfully demonstrated, with particularly good results for (100) and (110) film orientations. Electro-optic measurements on SBN:60 single crystals have shown a high value for r51 of 80 x 10 to the minus 12th power m/v, nearly a factor a 2 greater than for SBN:75. The tungsten bronze system Pb1-xBaxNb2O6 (PBN) has shown enhanced piezoelectric, dielectric and optical properties near the morphotropic boundary at x = 0.37. Substantial data on the physical properties of PBN single crystals is presented as a function of composition. Work on an appropriate flux system for LPE growth of PBN is in progress, with particular focus on the system Pb2V2O7 - PBN:60. Systematic work on the tungsten bronze system Ba2NaNb5O15 Sr2NaNb5O15 (BNN-SNN) and Pb2KNb5O15 - Ba2NaNb5O15 (PKN-BNN) has been undertaken, with both systems showing morphotropic boundary conditions with enhanced dielectric properties. Both systems look promising for future electro-optic development.

Ion-beam-induced nanodots formation from Au/Si thin films on quartz surface

NASA Astrophysics Data System (ADS)

Datta, D. P.; Siva, V.; Singh, A.; Joshi, S. R.; Kanjilal, D.; Sahoo, P. K.

2016-07-01

We report the synthesis of Si nanodots on quartz surface using ion irradiation. When a bi-layer of ultrathin Au and Si on quartz surface is irradiated by 500 keV Xe-ion beam, the bi-layer spontaneously transforms into nanodots at a fluence of 5 × 1014 ions cm-2. The spatial density and diameter of the nanodots are reduced with increase in applied ion fluence. The nanostructures exhibit photoluminescence in the visible range at room temperature where the intensity and wavelength depends upon ion fluence. The observed evolution seems to be correlated to ion beam mixing induced silicide formation at Au-Si interface.

Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2007-06-01

The surface properties of a plastic substrate were changed by a novel surface treatment called atomic hydrogen annealing (AHA). In this method, a plastic substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. For the substrate, surface roughness was increased and halogen elements (F and Cl) were selectively etched by AHA. AHA was useful for pretreatment before film deposition on a plastic substrate because the changes in surface state relate to adhesion improvement. It is concluded that this method is a promising technique for preparing high-performance plastic substrates at low temperatures.

Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure.

PubMed

Kim, Jongmin; Inamdar, Akbar I; Jo, Yongcheol; Woo, Hyeonseok; Cho, Sangeun; Pawar, Sambhaji M; Kim, Hyungsang; Im, Hyunsik

2016-04-13

This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.

Solidification Based Grain Refinement in Steels

DTIC Science & Technology

2010-07-20

methods which worked in the SVSU foundry. However, additions of NbO powder, FeTi, misch metal , and rare earth silicide were successful. Misch metal ...and rare earth silicide additions at the ladle are the most promising from an industrial stand point. The project group has begun preparing for the... metal and rare earth silicide additions have also reduced grain size and improved hardness. Instructions: You may use this MS Word file to submit the

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Debolina; Mahato, J. C.; Bisi, Bhaskar

Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along theirmore » edges.« less

Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

NASA Astrophysics Data System (ADS)

Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

2018-03-01

In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

Electrochemical properties of magnetron sputtered WO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madhavi, V.; Kondaiah, P.; Hussain, O. M.

2013-02-05

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly inmore » the first few cycles and stabilized at a lesser stage.« less

Superconductivity of lanthanum revisited

NASA Astrophysics Data System (ADS)

Loeptien, Peter; Zhou, Lihui; Wiebe, Jens; Khajetoorians, Alexander Ako; Wiesendanger, Roland

2014-03-01

The thickness dependence of the superconductivity in clean hexagonal lanthanum films grown on tungsten (110) is studied by means of scanning tunneling microscopy (STM) and spectroscopy (STS). Fitting of the measured spectra to BCS theory yields the superconducting energy gaps from which the critical temperatures are determined. For the case of thick, bulk-like films, the bulk energy gap and critical temperature of dhcp lanthanum turn out to be considerably higher as compared to values from the literature measured by other techniques. In thin films the superconductivity is quenched by the boundary condition for the superconducting wavefunction imposed by the substrate and surface, leading to a linear decrease of the superconducting transition temperature as a function of the inverse film thickness. This opens up the possibility to grow lanthanum films with defined superconducting properties.

Controlled Formation of Radial Core-Shell Si/Metal Silicide Crystalline Heterostructures.

PubMed

Kosloff, Alon; Granot, Eran; Barkay, Zahava; Patolsky, Fernando

2018-01-10

The highly controlled formation of "radial" silicon/NiSi  core-shell nanowire heterostructures has been demonstrated for the first time. Here, we investigated the "radial" diffusion of nickel atoms into crystalline nanoscale silicon pillar 11 cores, followed by nickel silicide phase formation and the creation of a well-defined shell structure. The described approach is based on a two-step thermal process, which involves metal diffusion at low temperatures in the range of 200-400 °C, followed by a thermal curing step at a higher temperature of 400 °C. In-depth crystallographic analysis was performed by nanosectioning the resulting silicide-shelled silicon nanopillar heterostructures, giving us the ability to study in detail the newly formed silicide shells. Remarkably, it was observed that the resulting silicide shell thickness has a self-limiting behavior, and can be tightly controlled by the modulation of the initial diffusion-step temperature. In addition, electrical measurements of the core-shell structures revealed that the resulting shells can serve as an embedded conductive layer in future optoelectronic applications. This research provides a broad insight into the Ni silicide "radial" diffusion process at the nanoscale regime, and offers a simple approach to form thickness-controlled metal silicide shells in the range of 5-100 nm around semiconductor nanowire core structures, regardless the diameter of the nanowire cores. These high quality Si/NiSi core-shell nanowire structures will be applied in the near future as building blocks for the creation of utrathin highly conductive optically transparent top electrodes, over vertical nanopillars-based solar cell devices, which may subsequently lead to significant performance improvements of these devices in terms of charge collection and reduced recombination.

Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okada, Naoya, E-mail: okada-naoya@aist.go.jp; Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562; Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573

We investigated the electrical properties and derived the energy band structures of amorphous Si-rich W silicide (a-WSi{sub n}) films and approximately 1-nm-thick crystalline WSi{sub n} epitaxial films (e-WSi{sub n}) on Si (100) substrates with composition n = 8–10, both composed of Si{sub n} clusters each of which encapsulates a W atom (WSi{sub n} clusters). The effect of annealing in the temperature range of 300–500 °C was also investigated. The Hall measurements at room temperature revealed that a-WSi{sub n} is a nearly intrinsic semiconductor, whereas e-WSi{sub n} is an n-type semiconductor with electron mobility of ∼8 cm{sup 2}/V s and high sheet electron density ofmore » ∼7 × 10{sup 12 }cm{sup −2}. According to the temperature dependence of the electrical properties, a-WSi{sub n} has a mobility gap of ∼0.1 eV and mid gap states in the region of 10{sup 19 }cm{sup −3} eV{sup −1} in an optical gap of ∼0.6 eV with considerable band tail states; e-WSi{sub n} has a donor level of ∼0.1 eV with sheet density in the region of 10{sup 12 }cm{sup −2} in a band gap of ∼0.3 eV. These semiconducting band structures are primarily attributed to the open band-gap properties of the constituting WSi{sub n} cluster. In a-WSi{sub n}, the random network of the clusters generates the band tail states, and the formation of Si dangling bonds results in the generation of mid gap states; in e-WSi{sub n}, the original cluster structure is highly distorted to accommodate the Si lattice, resulting in the formation of intrinsic defects responsible for the donor level.« less

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

Probing Transition-Metal Silicides as PGM-Free Catalysts for Hydrogen Oxidation and Evolution in Acidic Medium

PubMed Central

Mittermeier, Thomas; Madkikar, Pankaj; Wang, Xiaodong; Gasteiger, Hubert A.; Piana, Michele

2017-01-01

In this experimental study, we investigate various transition-metal silicides as platinum-group-metal-(PGM)-free electrocatalysts for the hydrogen oxidation reaction (HOR), and for the hydrogen evolution reaction (HER) in acidic environment for the first time. Using cyclic voltammetry in 0.1 M HClO4, we first demonstrate that the tested materials exhibit sufficient stability against dissolution in the relevant potential window. Further, we determine the HOR and HER activities for Mo, W, Ta, Ni and Mo-Ni silicides in rotating disk electrode experiments. In conclusion, for the HOR only Ni2Si shows limited activity, and the HER activity of the investigated silicides is considerably lower compared to other PGM-free HER catalysts reported in the literature. PMID:28773022

Phase transformations in ion-irradiated silicides

NASA Technical Reports Server (NTRS)

Hewett, C. A.; Lau, S. S.; Suni, I.; Hung, L. S.

1985-01-01

The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

The influence of filament temperature and oxygen concentration on tungsten oxide nanostructures by hot filament metal oxide deposition

NASA Astrophysics Data System (ADS)

Lou, J.; Ye, B. J.; Weng, H. M.; Du, H. J.; Wang, Z. B.; Wang, X. P.

2008-08-01

Tungsten oxide (WOx) nanostructures were prepared by a hot filament chemical vapour deposition system and the temperature of the hot tungsten filaments was changed by steps of degrees. The morphology and average growth rate were indicated by scanning electron microscopy which showed that the morphology was highly related to the filament temperature (Tf) and the distance between the filaments and the polished Si (1 0 0) substrates (df). The influence of Tf on the crystalline nature was studied by x-ray diffraction and Raman spectroscopy. The evolution of stoichiometry and types of defects was indicated by x-ray photoelectron spectroscopy and slow positron implantation spectroscopy. When Tf was up to 1750 °C, tungsten oxide nanostructure was synthesized. A turning point of Tf was found at which the nature of crystallinity and of stoichiometry was the best. As Tf increased to 2100 °C or df decreased, the film crystallinity decreased; correspondingly, the component ratio of stoichiometry WO3 decreased and lots of vacancy agglomerates were present. In order to develop the chemical phase from substoichiometry to stoichiometry, the oxygen gas concentration in the mixture gas during deposition should be raised to an appropriate level.

An Inexpensive Device for Studying Electrochromism

ERIC Educational Resources Information Center

Ibanez, Jorge G.; Puente-Caballero, Rodrigo; Torres-Perez, Jonatan; Bustos, Daniel; Carmona-Orbezo, Aranzazu; Sevilla, Fortunato B., III

2012-01-01

A novel procedure for the preparation of electrochromic WO[subscript 3] films from readily available materials is presented. It is based on the electrochemical preparation of potassium tungstate from tungsten filaments of incandescent light bulbs in a potassium hydroxide solution. Tungstic acid is then produced by proton exchange using a…

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

Solidification Based Grain Refinement in Steels

DTIC Science & Technology

2011-09-27

project (Tasks 7-9). An industrial trial on an investment casting was done using rare earth silicide additions in a furnace prior to pouring (Task 7...an investment casting was done using rare earth silicide additions in a furnace prior to pounng (la.sk 7). Some of the test parts had a finer...poured at the end of a six casting batch. One test tree with no RE addition was poured. Before the second test tree was poured, sufficient RE silicide was

Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

NASA Astrophysics Data System (ADS)

Tang, Wei

Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using the conventional field-effect transconductance measurements. In addition to application of silicide in Si NW devices, the fundamental materials science of Ni-Si reaction is also of interest, and in-situ TEM has been shown to be a useful tool in obtaining dynamical phase transformation information and therefore providing insights into the new phase formation process. By using in-situ TEM techniques, a new gold catalyzed solid-liquid-solid (SLS) silicide phase growth mechanism in Si NWs is observed for the first time, which shows the liquid mediating growth can be also used in synthesis of metallic silicide nanowires. SLS is analogous to the VLS in both being liquid-mediated, but is fundamentally different in terms of nucleation and mass transport. In our SLS growth at 700 ºC, the Ni atoms are supplied from remote Ni particles by interstitial diffusion through Si NW into the pre-existing Au particle at the tip. Upon supersaturation of both Ni and Si in Au, octahedral shape of Ni disilicide phase nucleates in the middle of the Au liquid alloy, which thereafter sweeps through the Si NW and transform Si into NiSi2. Dissolution of Si by Au(Si,Ni) liquid mediating layer and growth of NiSi2 are shown to proceed in different manners. Using in-situ TEM technique, we also have the chance to present direct evidence that Si (111) twin boundaries and Si grain boundaries on Si NW surface can be efficient heterogeneous nucleation site for the silicide growth. By analyzing the nucleation site favorability, unlike other typical FCC materials like Cu or Si, we infer (111) twin defects in NiSi2 may have high interfacial energy. These results may provide valuable insights into the MOSFET source/drain (S/D) contact silicide formation process when defects are either unintentionally formed during the process or intentionally introduced to engineering the strain along the channel.

New deposition technique for metal films containing inorganic fullerene-like (IF) nanoparticles.

PubMed

Goldbart, Ohad; Yoffe, Alexander; Cohen, Sidney R; Rosentsveig, Rita; Feldman, Yishay; Rapoport, Lev; Tenne, Reshef

2013-07-22

This study describes a new method for fabrication of thin composite films using physical vapor deposition (PVD). Titanium (Ti) and hybrid films of titanium containing tungsten disulphide nanoparticles with inorganic fullerene-like structure (Ti/IF-WS2) were fabricated with a modified PVD machine. The evaporation process includes the pulsed deposition of IF-WS2 by a sprayer head. This process results in IF-WS2 nanoparticles embedded in a Ti matrix. The layers were characterized by various techniques, which confirm the composition and structure of the hybrid film. The Ti/IF-WS2 shows better wear resistance and a lower friction coefficient when compared to the Ti layer or Ti substrate. The Ti/IF films show very good antireflective properties in the visible and near-IR region. Such films may find numerous applications, for example, in the aerospace and medical technology. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rapid crystallization of WS2 films assisted by a thin nickel layer: An in situ energy-dispersive X-ray diffraction study

NASA Astrophysics Data System (ADS)

Ellmer, K.; Seeger, S.; Mientus, R.

2006-08-01

By rapid thermal crystallization of an amorphous WS3+x film, deposited by reactive magnetron sputtering at temperatures below 150 °C, layer-type semiconducting tungsten disulfide films (WS2) were grown. The rapid crystallization was monitored in real-time by in situ energy-dispersive X-ray diffraction. The films crystallize very fast (>40 nm/s), provided that a thin nickel film acts as nucleation seeds. Experiments on different substrates and the onset of the crystallization only at a temperature between 600 and 700 °C points to the decisive role of seeds for the textured growth of WS2, most probably liquid NiSx drops. The rapidly crystallized WS2 films exhibit a pronounced (001) texture with the van der Waals planes oriented parallel to the surface, leading to photoactive layers with a high hole mobility of about 80 cm2/Vs making such films suitable as absorbers for thin film solar cells.

Optical characteristics of bismuth sulfide (Bi2S3) thin films.

NASA Astrophysics Data System (ADS)

Mahmoud, S.; Eid, A. H.; Omar, H.

Thin films of bismuth sulfide (Bi2S3) were grown by two deposition techniques, by thermal evaporation and by chemical deposition. The thermally deposited reactions consisted in depositing the individual elements, namely bismuth and sulfur, sequentially from a tungsten boat source and allowing the layers to interdiffuse to form the compound during the heat-treatment. The chemical deposition was based on the reaction between the triethanolamine compex of Bi3+ ions and thiourea in basic media. Scanning electron microscope and X-ray diffraction analysis were made on as-deposited and on annealed films to determine their structure. The different electronic transitions and the optical constants are determined from the transmision and reflection data of these thin films for normal incidence. The optical gaps of Bi2S3 films show a remarkable dependence on the preparation method.

Two-dimensional self-organization of an ordered Au silicide nanowire network on a Si(110)-16 x 2 surface.

PubMed

Hong, Ie-Hong; Yen, Shang-Chieh; Lin, Fu-Shiang

2009-08-17

A well-ordered two-dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self-organized on a Si(110)-16 x 2 surface by the direct-current heating of approximately 1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long-range spatial order and a high integration density over a mesoscopic area, and these two self-ordering crossed arrays of parallel-aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as approximately 2 and approximately 5 nm, respectively. The difference in the conductivities of two crossed-NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self-organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 x 2 domains, which are driven by the electrical field of direct-current heating. Prospects for this Au silicide nanomesh are also discussed.

Chromium silicide formation by ion mixing

NASA Technical Reports Server (NTRS)

Shreter, U.; So, F. C. T.; Nicolet, M.-A.

1984-01-01

The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

High temperature thruster technology for spacecraft propulsion

NASA Technical Reports Server (NTRS)

Schneider, Steven J.

1991-01-01

A technology program intended to develop high-temperature oxidation-resistant thrusters for spacecraft applications is considered. The program will provide the requisite material characterizations and fabrication to incorporate iridium coated rhenium material into small rockets for spacecraft propulsion. This material increases the operating temperature of thrusters to 2200 C, a significant increase over the 1400 C of the silicide-coated niobium chambers currently used. Stationkeeping class 22 N engines fabricated from iridium-coated rhenium have demonstrated steady state specific impulses 20-25 seconds higher than niobium chambers. These improved performances are obtained by reducing or eliminating the fuel film cooling requirements in the combustion chamber while operating at the same overall mixture ratio as conventional engines.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr; Han, Won Seok

Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, withmore » a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.« less

Ferroelectric Tungsten Bronze Bulk Crystals and Epitaxial Thin Films for Electro-Optic Device Applications

DTIC Science & Technology

1984-07-01

improved, they show a considerable enhancement in electro - optic and photorefractive properties, specifically for Ce(3+)-doped SBN:60 crystals. The...concentration of impurity ions increased. Undoped SBN:60 single crystals have also been grown and they are almost striation-free and exhibit excellent electro - optic properties.

Synthesis of Au microwires by selective oxidation of Au–W thin-film composition spreads

PubMed Central

Hamann, Sven; Brunken, Hayo; Salomon, Steffen; Meyer, Robert; Savan, Alan; Ludwig, Alfred

2013-01-01

We report on the stress-induced growth of Au microwires out of a surrounding Au–W matrix by selective oxidation, in view of a possible application as ‘micro-Velcro’. The Au wires are extruded due to the high compressive stress in the tungsten oxide formed by oxidation of elemental W. The samples were fabricated as a thin-film materials library using combinatorial sputter deposition followed by thermal oxidation. Sizes and shapes of the Au microwires were investigated as a function of the W to Au ratio. The coherence length and stress state of the Au microwires were related to their shape and plastic deformation. Depending on the composition of the Au–W precursor, the oxidized samples showed regions with differently shaped Au microwires. The Au48W52 composition yielded wires with the maximum length to diameter ratio due to the high compressive stress in the tungsten oxide matrix. The values of wire length (35 μm) and diameter (2 μm) achieved at the Au48W52 composition are suitable for micro-Velcro applications. PMID:27877561

ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

PubMed

Yang, Wenming; Zhu, Rong; Zong, Xianli

2016-12-01

Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

Design and fabrication of a CMOS-compatible MHP gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Ying; Yu, Jun, E-mail: junyu@dlut.edu.cn; Wu, Hao

2014-03-15

A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO{sub 2} film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperaturemore » in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.« less

Enhancing the performance of tungsten doped InZnO thin film transistors via sequential ambient annealing

NASA Astrophysics Data System (ADS)

Park, Hyun-Woo; Song, Aeran; Kwon, Sera; Choi, Dukhyun; Kim, Younghak; Jun, Byung-Hyuk; Kim, Han-Ki; Chung, Kwun-Bum

2018-03-01

This study suggests a sequential ambient annealing process as an excellent post-treatment method to enhance the device performance and stability of W (tungsten) doped InZnO thin film transistors (WIZO-TFTs). Sequential ambient annealing at 250 °C significantly enhanced the device performance and stability of WIZO-TFTs, compared with other post-treatment methods, such as air ambient annealing and vacuum ambient annealing at 250 °C. To understand the enhanced device performance and stability of WIZO-TFT with sequential ambient annealing, we investigate the correlations between device performance and stability and electronic structures, such as band alignment, a feature of the conduction band, and band edge states below the conduction band. The enhanced performance of WIZO-TFTs with sequential ambient annealing is related to the modification of the electronic structure. In addition, the dominant mechanism responsible for the enhanced device performance and stability of WIZO-TFTs is considered to be a change in the shallow-level and deep-level band edge states below the conduction band.

Noise-like pulse generation in an ytterbium-doped fiber laser using tungsten disulphide

NASA Astrophysics Data System (ADS)

Zhang, Wenping; Song, Yanrong; Guoyu, Heyang; Xu, Runqin; Dong, Zikai; Li, Kexuan; Tian, Jinrong; Gong, Shuang

2017-12-01

We demonstrated the noise-like pulse (NLP) generation in an ytterbium-doped fiber (YDF) laser with tungsten disulphide (WS2). Stable fundamental mode locking and second-order harmonic mode locking were observed. The saturable absorber (SA) was a WS2-polyvinyl alcohol film. The modulation depth of the WS2 film was 2.4%, and the saturable optical intensity was 155 MW cm-2. Based on this SA, the fundamental NLP with a pulse width of 20 ns and repetition rate of 7 MHz were observed. The autocorrelation trace of output pulses had a coherent spike, which came from NLP. The average pulse width of the spike was 550 fs on the top of a broad pedestal. The second-order harmonic NLP had a spectral bandwidth of 1.3 nm and pulse width of 10 ns. With the pump power of 400 mW, the maximum output power was 22.2 mW. To the best of our knowledge, this is the first time a noise-like mode locking in an YDF laser based on WS2-SA in an all normal dispersion regime was obtained.

Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices

PubMed Central

Rane, Gayatri K.; Seifert, Marietta; Menzel, Siegfried; Gemming, Thomas; Eckert, Jürgen

2016-01-01

Thin films of tungsten on piezoelectric substrates La3Ga5SiO14 (LGS) and Ca3TaGa3Si2O14 (CTGS) have been investigated as a potential new electrode material for interdigital transducers for surface acoustic wave-based sensor devices operating at high temperatures up to 800 °C under vacuum conditions. Although LGS is considered to be suitable for high-temperature applications, it undergoes chemical and structural transformation upon vacuum annealing due to diffusion of gallium and oxygen. This can alter the device properties depending on the electrode nature, the annealing temperature, and the duration of the application. Our studies present evidence for the chemical stability of W on these substrates against the diffusion of Ga/O from the substrate into the film, even upon annealing up to 800 °C under vacuum conditions using Auger electron spectroscopy and energy-dispersive X-ray spectroscopy, along with local studies using transmission electron microscopy. Additionally, the use of CTGS as a more stable substrate for such applications is indicated. PMID:28787898

Structural and gasochromic properties of WO3 films prepared by reactive sputtering deposition

NASA Astrophysics Data System (ADS)

Yamamoto, S.; Hakoda, T.; Miyashita, A.; Yoshikawa, M.

2015-02-01

The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO3) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO3 films were prepared on SiO2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N2 gas. It was found that (001)-oriented monoclinic WO3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO3 films revealed that (001)-oriented WO3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.

Energetic Materials Laboratory

DTIC Science & Technology

2015-04-30

regolith simulants mixed with magnesium, supported by NASA. It has also been used for studies on combustion synthesis of magnesium silicide , a...ammonium dinitramide based monopropellant.  The laser flash apparatus has been used for thermal diffusivities measurements for magnesium silicide and

Ensuring the Consistency of Silicide Coatings

NASA Technical Reports Server (NTRS)

Ramani, V.; Lampson, F. K.

1982-01-01

Diagram specifies optimum fusing time for given thicknesses of refractory metal-silicide coatings on columbium C-103 substrates. Adherence to indicated fusion times ensures consistent coatings and avoids underdiffusion and overdiffusion. Accuracy of diagram has been confirmed by tests.

Room temperature ferromagnetic gadolinium silicide nanoparticles

DOEpatents

Hadimani, Magundappa Ravi L.; Gupta, Shalabh; Harstad, Shane; Pecharsky, Vitalij; Jiles, David C.

2018-03-06

A particle usable as T₁ and T₂ contrast agents is provided. The particle is a gadolinium silicide (Gd₅Si₄) particle that is ferromagnetic at temperatures up to 290 K and is less than 2 .mu.m in diameter. An MRI contrast agent that includes a plurality of gadolinium silicide (Gd.sub.5Si.sub.4) particles that are less than 1 .mu.m in diameter is also provided. A method for creating gadolinium silicide (Gd₅Si₄) particles is also provided. The method includes the steps of providing a Gd₅Si₄ bulk alloy; grinding the Gd₅Si₄ bulk alloy into a powder; and milling the Gd₅Si₄ bulk alloy powder for a time of approximately 20 minutes or less.

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library.

PubMed

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library Fe x Si y Ge 100-x-y (20

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

NASA Astrophysics Data System (ADS)

Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

2017-08-01

In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

NASA Astrophysics Data System (ADS)

d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

2017-07-01

A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Corrosion of Tungsten Microelectrodes used in Neural Recording Applications

PubMed Central

Patrick, Erin; Orazem, Mark E.; Sanchez, Justin C.; Nishida, Toshikazu

2011-01-01

In neuroprosthetic applications, long-term electrode viability is necessary for robust recording of the activity of neural populations used for generating communication and control signals. The corrosion of tungsten microwire electrodes used for intracortical recording applications was analyzed in a controlled bench-top study and compared to the corrosion of tungsten microwires used in an in vivo study. Two electrolytes were investigated for the benchtop electrochemical analysis: 0.9% phosphate buffered saline (PBS) and 0.9% PBS containing 30 mM of hydrogen peroxide. The oxidation and reduction reactions responsible for corrosion were found by measurement of the open circuit potential and analysis of Pourbaix diagrams. Dissolution of tungsten to form the tungstic ion was found to be the corrosion mechanism. The corrosion rate was estimated from the polarization resistance, which was extrapolated from the electrochemical impedance spectroscopy data. The results show that tungsten microwires in an electrolyte of PBS have a corrosion rate of 300–700 µm/yr. The corrosion rate for tungsten microwires in an electrolyte containing PBS and 30 mM H2O2 is accelerated to 10,000–20,000 µm/yr. The corrosion rate was found to be controlled by the concentration of the reacting species in the cathodic reaction (e.g. O2 and H2O2). The in vivo corrosion rate, averaged over the duration of implantation, was estimated to be 100 µm/yr. The reduced in vivo corrosion rate as compared to the benchtop rate is attributed to decreased rate of oxygen diffusion caused by the presence of a biological film and a reduced concentration of available oxygen in the brain. PMID:21470563

Corrosion of tungsten microelectrodes used in neural recording applications.

PubMed

Patrick, Erin; Orazem, Mark E; Sanchez, Justin C; Nishida, Toshikazu

2011-06-15

In neuroprosthetic applications, long-term electrode viability is necessary for robust recording of the activity of neural populations used for generating communication and control signals. The corrosion of tungsten microwire electrodes used for intracortical recording applications was analyzed in a controlled bench-top study and compared to the corrosion of tungsten microwires used in an in vivo study. Two electrolytes were investigated for the bench-top electrochemical analysis: 0.9% phosphate buffered saline (PBS) and 0.9% PBS containing 30 mM of hydrogen peroxide. The oxidation and reduction reactions responsible for corrosion were found by measurement of the open circuit potential and analysis of Pourbaix diagrams. Dissolution of tungsten to form the tungstic ion was found to be the corrosion mechanism. The corrosion rate was estimated from the polarization resistance, which was extrapolated from the electrochemical impedance spectroscopy data. The results show that tungsten microwires in an electrolyte of PBS have a corrosion rate of 300-700 μm/yr. The corrosion rate for tungsten microwires in an electrolyte containing PBS and 30 mM H₂O₂ is accelerated to 10,000-20,000 μm/yr. The corrosion rate was found to be controlled by the concentration of the reacting species in the cathodic reaction (e.g. O₂ and H₂O₂). The in vivo corrosion rate, averaged over the duration of implantation, was estimated to be 100 μm/yr. The reduced in vivo corrosion rate as compared to the bench-top rate is attributed to decreased rate of oxygen diffusion caused by the presence of a biological film and a reduced concentration of available oxygen in the brain. Copyright © 2011 Elsevier B.V. All rights reserved.

Auger spectroscopy analysis of lubrication with zinc dialkyldithiophosphate of several metal combinations in sliding contact

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1979-01-01

Sliding friction experiments were conducted with aluminum and other riders rubbing on disks of various elemental metals in the presence of a thin film of zinc dialkyldithiophosphate (ZDP). Auger emission spectroscopy was used to in situ monitor the changes in surface chemistry with rubbing under various loads. The metal disks examined included iron, titanium, rhodium, tungsten, molybdenum, and copper. For equivalent films of ZDP the film is a more effective lubricant for some metals than it is for others. The important active element in the compound varies with the metal lubricated and is a function of metal chemistry. The zinc in the ZDP is susceptible to electron beam induced desorption.

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

Deposition of device quality low H content, amorphous silicon films

DOEpatents

Mahan, A.H.; Carapella, J.C.; Gallagher, A.C.

1995-03-14

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content. 7 figs.

Deposition of device quality low H content, amorphous silicon films

DOEpatents

Mahan, Archie H.; Carapella, Jeffrey C.; Gallagher, Alan C.

1995-01-01

A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

Effect of Pt Nanoparticles on the Optical Gas Sensing Properties of WO3 Thin Films

PubMed Central

Qadri, Muhammad U.; Diaz Diaz, Alex Fabian; Cittadini, Michaela; Martucci, Alessandro; Pujol, Maria Cinta; Ferré-Borrull, Josep; Llobet, Eduard; Aguiló, Magdalena; Díaz, Francesc

2014-01-01

Thin films of tungsten trioxide were deposited on quartz substrates by RF magnetron sputtering. Different annealing temperatures in the range from 423 to 973 K were used under ambient atmosphere. The influence of the annealing temperature on the structure and optical properties of the resulting WO3 thin films were studied. The surface morphology of the films is composed of grains with an average size near 70 nm for the films annealed between 773 and 973 K. Some of the WO3 thin films were also coated with Pt nanoparticles of about 45 nm in size. Spectrometric measurements of transmittance were carried out for both types of WO3 samples in the wavelength range from 200–900 nm, to determine the effect of the exposure to two different gases namely H2 and CO. Films showed fast response and recovery times, in the range of few seconds. The addition of Pt nanoparticles enables reducing the operation temperature to room temperature. PMID:24977386

Tuning the band gap of TiO2 by tungsten doping for efficient UV and visible photodegradation of Congo red dye.

PubMed

Ullah, Irfan; Haider, Ali; Khalid, Nasir; Ali, Saqib; Ahmed, Sajjad; Khan, Yaqoob; Ahmed, Nisar; Zubair, Muhammad

2018-06-13

Tungsten-doped TiO 2 (W@TiO 2 ) nanoparticles, with different percentages of atomic tungsten dopant levels (range of 0 to 6 mol%) have been synthesized by the sol-gel method and characterized by UV-Visible spectroscopy, XRD, SEM, EDX, ICP-OES and XPS analysis. By means of UV-Vis spectroscopy, it has been observed that with 6 mol% tungsten doping the wavelength range of excitation of TiO 2 has extended to the visible portion of spectrum. Therefore, we evaluated the photocatalytic activity of W@TiO 2 catalysts for the degradation of Congo red dye under varying experimental parameters such as dopant concentration, catalyst dosage, dye concentrations and pH. Moreover, 6 mol% W@TiO 2 catalyst was deposited on a glass substrate to form thin film using spin coating technique in order to make the photocatalyst effortlessly reusable with approximately same efficiency. The results compared with standard titania, Degussa P25 both in UV- and visible light, suggest that 6 mol% W@TiO 2 can be a cost-effective choice for visible light induced photocatalytic degradation of Congo red dye. Copyright © 2018 Elsevier B.V. All rights reserved.

Characterization of MAPLE deposited WO3 thin films for electrochromic applications

NASA Astrophysics Data System (ADS)

Boyadjiev, S. I.; Stefan, N.; Szilágyi, I. M.; Mihailescu, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Besleaga, C.; Iliev, M. T.; Gesheva, K. A.

2017-01-01

Tungsten trioxide (WO3) is a widely studied material for electrochromic applications. The structure, morphology and optical properties of WO3 thin films, grown by matrix assisted pulsed laser evaporation (MAPLE) from monoclinic WO3 nano-sized particles, were investigated for their possible application as electrochromic layers. A KrF* excimer (λ=248 nm, ζFWHM=25 ns) laser source was used in all experiments. The MAPLE deposited WO3 thin films were studied by atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD) and Fourier transform infrared spectroscopy (FTIR). Cyclic voltammetry measurements were also performed, and the coloring and bleaching were observed. The morpho-structural investigations disclosed the synthesis of single-phase monoclinic WO3 films consisting of crystalline nano-grains embedded in an amorphous matrix. All thin films showed good electrochromic properties, thus validating application of the MAPLE deposition technique for the further development of electrochromic devices.

Nanotwinned metal MEMS films with unprecedented strength and stability

PubMed Central

Sim, Gi-Dong; Krogstad, Jessica A.; Reddy, K. Madhav; Xie, Kelvin Y.; Valentino, Gianna M.; Weihs, Timothy P.; Hemker, Kevin J.

2017-01-01

Silicon-based microelectromechanical systems (MEMS) sensors have become ubiquitous in consumer-based products, but realization of an interconnected network of MEMS devices that allows components to be remotely monitored and controlled, a concept often described as the “Internet of Things,” will require a suite of MEMS materials and properties that are not currently available. We report on the synthesis of metallic nickel-molybdenum-tungsten films with direct current sputter deposition, which results in fully dense crystallographically textured films that are filled with nanotwins. These films exhibit linear elastic mechanical behavior and tensile strengths exceeding 3 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultrahigh strength is attributed to a combination of solid solution strengthening and the presence of dense nanotwins. These films also have excellent thermal and mechanical stability, high density, and electrical properties that are attractive for next-generation metal MEMS applications. PMID:28782015

Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

PubMed

Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

2014-11-01

The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of PLD grown WO3 thin films for gas sensing

NASA Astrophysics Data System (ADS)

Boyadjiev, Stefan I.; Georgieva, Velichka; Stefan, Nicolaie; Stan, George E.; Mihailescu, Natalia; Visan, Anita; Mihailescu, Ion N.; Besleaga, Cristina; Szilágyi, Imre M.

2017-09-01

Tungsten trioxide (WO3) thin films were grown by pulsed laser deposition (PLD) with the aim to be applied in gas sensors. The films were studied by atomic force microscopy (AFM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy and profilometry. To study the gas sensing behavior of these WO3 films, they were deposited on quartz resonators and the quartz crystal microbalance (QCM) method was applied to analyze their gas sensitivity. Synthesis of tetragonal-WO3 films starting from a target with predominantly monoclinic WO3 phase was observed. The films deposited at 300 °C presented a surface topology favorable for the sorption properties, consisting of a film matrix with protruding craters/cavities. QCM prototype sensors with such films were tested for NO2 sensing. The PLD grown WO3 thin films show good sensitivity and fast reaction at room temperature, even in as-deposited state. With the presented technology, the manufacturing of QCM gas sensors is simple, fast and cost-effective, and it is also suitable for energy-effective portable equipment for on-line monitoring of environmental changes.

Hierarchical Assembly of Tungsten Spheres and Epoxy Composites in Three-Dimensional Graphene Foam and Its Enhanced Acoustic Performance as a Backing Material.

PubMed

Qiu, Yunfeng; Liu, Jingjing; Lu, Yue; Zhang, Rui; Cao, Wenwu; Hu, PingAn

2016-07-20

Backing materials play important role in enhancing the acoustic performance of an ultrasonic transducer. Most backing materials prepared by conventional methods failed to show both high acoustic impedance and attenuation, which however determine the bandwidth and axial resolution of acoustic transducer, respectively. In the present work, taking advantage of the structural feature of 3D graphene foam as a confined space for dense packing of tungsten spheres with the assistance of centrifugal force, the desired structural requirement for high impedance is obtained. Meanwhile, superior thermal conductivity of graphene contributes to the acoustic attenuation via the conversion of acoustic waves to thermal energy. The tight contact between tungstate spheres, epoxy matrix, or graphene makes the acoustic wave depleted easily for the absence of air barrier. The as-prepared 3DG/W80 wt %/epoxy film in 1 mm, prepared using ∼41 μm W spheres in diameter, not only displays acoustic impedance of 13.05 ± 0.11 MRayl but also illustrates acoustic attenuation of 110.15 ± 1.23 dB/cm MHz. Additionally, the composite film exhibits a high acoustic absorption coefficient, which is 94.4% at 1 MHz and 100% at 3 MHz, respectively. Present composite film outperforms most of the reported backing materials consisting of metal fillers/polymer blending in terms of the acoustic impedance and attenuation.

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

NASA Astrophysics Data System (ADS)

Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

2017-07-01

In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

1985-01-01

A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

PubMed Central

Kolel-Veetil, Manoj K.; Keller, Teddy M.

2010-01-01

The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

Synthesis and design of silicide intermetallic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrovic, J.J.; Castro, R.G.; Butt, D.P.

1997-04-01

The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has amore » number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.« less

Tungsten-encapsulated gadolinium nanoislands with enhanced magnetocaloric response

DOE PAGES

Logan, Jonathan M.; Rosenmann, Daniel; Sangpo, Tenzin; ...

2017-07-03

Here, we report a method for growing chemically pure, oxide-free, air-stable Gd nanoislands with enhanced magnetic properties. These nanoislands are grown by solid-state dewetting and are fully encapsulated in tungsten such that they remain stable in ambient environments. They display good crystalline properties with hexagonally close-packed crystal structure and strong preferential orientation. We show that the choice of substrate strongly affects their shape, crystal orientation, and magnetic properties. The temperature-dependent magnetic coercivity and remanence of the Gd islands can vary by as much as a factor of three depending on the substrate used. The magneto- caloric properties of Gd islandsmore » grown on a sapphire substrate exceed those of high-quality Gd thin films.« less

In-Line Monitoring of Fab Processing Using X-Ray Diffraction

NASA Astrophysics Data System (ADS)

Gittleman, Bruce; Kozaczek, Kris

2005-09-01

As the materials shift that started with Cu continues to advance in the semiconductor industry, new issues related to materials microstructure have arisen. While x-ray diffraction (XRD) has long been used in development applications, in this paper we show that results generated in real time by a unique, high throughput, fully automated XRD metrology tool can be used to develop metrics for qualification and monitoring of critical processes in current and future manufacturing. It will be shown that these metrics provide a unique set of data that correlate to manufacturing issues. For example, ionized-sputtering is the current deposition method of choice for both the Cu seed and TaNx/Ta barrier layers. The alpha phase of Ta is widely used in production for the upper layer of the barrier stack, but complete elimination of the beta phase requires a TaNx layer with sufficient N content, but not so much as to start poisoning the target and generating particle issues. This is a well documented issue, but traditional monitoring by sheet resistance methods cannot guarantee the absence of the beta phase, whereas XRD can determine the presence of even small amounts of beta. Nickel silicide for gate metallization is another example where monitoring of phase is critical. As well being able to qualify an anneal process that gives only the desired NiSi phase everywhere across the wafer, XRD can be used to determine if full silicidation of the Ni has occurred and characterize the crystallographic microstructure of the Ni to determine any effect of that microstructure on the anneal process. The post-anneal nickel silicide phase and uniformity of the silicide microstructure can all be monitored in production. Other examples of the application of XRD to process qualification and production monitoring are derived from the dependence of certain processes, some types of defect generation, and device performance on crystallographic texture. The data presented will show that CMP dishing problems could be traced to texture of the barrier layer and mitigated by adjusting the barrier process. The density of pits developed during CMP of electrochemically deposited (ECD) Cu depends on the fraction of (111) oriented grains. It must be emphasized that the crystallographic texture is not only a key parameter for qualification of high yielding and reliable processes, but also serves as a critical parameter for monitoring tool health. The texture of Cu and W are sensitive not only to deviations in performance of the tool depositing or annealing a particular film, but also highly sensitive to the texture of the barrier underlayers and thus any performance deviations in those tools. The XRD metrology tool has been designed with production monitoring in mind and has been fully integrated into both 200 mm and 300 mm fabs. Rapid analysis is achieved by using a high intensity fixed x-ray source, coupled with a large area 2D detector. The output metrics from one point are generated while the tool is measuring a subsequent point, giving true on-the-fly analysis; no post-processing of data is necessary. Spatial resolution on the wafer surface ranging from 35 μm to 1 mm is available, making the tool suitable for monitoring of product wafers. Typical analysis times range from 10 seconds to 2 minutes per point, depending on the film thickness and spot size. Current metrics used for process qualification and production monitoring are phase, FWHM of the primary phase peaks (for mean grain size tracking), and crystallographic texture.

Trace hydrogen sulfide gas sensor based on tungsten sulfide membrane-coated thin-core fiber modal interferometer

NASA Astrophysics Data System (ADS)

Deng, Dashen; Feng, Wenlin; Wei, Jianwei; Qin, Xiang; Chen, Rong

2017-11-01

A novel fiber-optic hydrogen sulfide sensor based on a thin-core Mach-Zehnder fiber modal interferometer (TMZFI) is demonstrated and fabricated. This in-line interferometer is composed of a short section of thin-core fiber sandwiched between two standard single mode fibers, and the fast response to hydrogen sulfide is achieved via the construction of tungsten sulfide film on the outside surface of the TMZFI using the dip-coating and calcination technique. The fabricated sensing nanofilm is characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) spectrometer, Fourier transform infrared (FTIR) and spectroscopic analysis technology, etc. Experimental results showed that the WS2 sensing film has a hexagonal structure with a compact and porous morphology. The XPS and FTIR indicate that the existence of two elements (W and S) is demonstrated. With the increasing concentration of hydrogen sulfide, the interference spectra appear blue shift. In addition, a high sensitivity of 18.37 pm/ppm and a good linear relationship are obtained within a measurement range from 0 to 80 ppm. In addition, there is an excellent selectivity for H2S, which has also been proved by the surface adsorption energy results of tungsten sulfide with four gases (H2S, N2, O2 and CO2) by using the density functional theory calculations. This interferometer has the advantages of simple structure, high sensitivity and easy manufacture, and could be used in the safety monitoring field of hydrogen sulfide gas.

Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U.; Lützenkirchen-Hecht, D.

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-raymore » photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.« less

Measurement of thickness of film deposited on the plasma-facing wall in the QUEST tokamak by colorimetry.

PubMed

Wang, Z; Hanada, K; Yoshida, N; Shimoji, T; Miyamoto, M; Oya, Y; Zushi, H; Idei, H; Nakamura, K; Fujisawa, A; Nagashima, Y; Hasegawa, M; Kawasaki, S; Higashijima, A; Nakashima, H; Nagata, T; Kawaguchi, A; Fujiwara, T; Araki, K; Mitarai, O; Fukuyama, A; Takase, Y; Matsumoto, K

2017-09-01

After several experimental campaigns in the Kyushu University Experiment with Steady-state Spherical Tokamak (QUEST), the originally stainless steel plasma-facing wall (PFW) becomes completely covered with a deposited film composed of mixture materials, such as iron, chromium, carbon, and tungsten. In this work, an innovative colorimetry-based method was developed to measure the thickness of the deposited film on the actual QUEST wall. Because the optical constants of the deposited film on the PFW were position-dependent and the extinction coefficient k 1 was about 1.0-2.0, which made the probing light not penetrate through some thick deposited films, the colorimetry method developed can only provide a rough value range of thickness of the metal-containing film deposited on the actual PFW in QUEST. However, the use of colorimetry is of great benefit to large-area inspections and to radioactive materials in future fusion devices that will be strictly prohibited from being taken out of the limited area.

Electrochromic Properties of Tungsten Oxide Films Prepared by Reactive Sputtering

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Kang, Tai Young; Jung, Yu Sup; Kim, Kyung Hwan

2013-05-01

WO3-x thin films were deposited on induim tin oxide (ITO) glass substrates with various oxygen flow ratios from 0.55 to 0.7 by the reactive facing-target sputtering method, at a power density of 4 W/cm2 and room temperature. The structural properties of the WO3-x thin films were measured by X-ray diffractometry and Raman spectral analysis. As-deposited WO3-x thin films had an amorphous structure. In the Raman spectra, WO3-x thin films exhibited two strong peaks at 770 and 950 cm-1 attributed to the vibrations of W6+-O and W6+=O bonds, respectively. The electrochemical and optical properties of WO3-x thin films were measured by cyclic voltammetry and UV/vis spectrometry. The results showed the highest charge density at an oxygen flow ratio of 0.7 and the highest transmittance in the visible range. The maximum coloration efficiency was 30.82 cm2/C at an oxygen flow ratio of 0.7.

Effect of preparation conditions on the properties of Cu3BiS3 thin films grown by a two - step process

NASA Astrophysics Data System (ADS)

Mesa, F.; Gordillo, G.

2009-05-01

Cu3BiS3 thin films were prepared on soda-lime glass substrates by co-evaporation of the precursors in a two-step process; for that, the metallic precursors were evaporated from a tungsten boat in presence of elemental sulfur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, atomic force microscopy AFM and x-ray diffraction (XRD) measurements to investigate the effect of the growth conditions on the optical, morphological and structural properties. The results revealed that, independently of the deposition conditions, the films grow only in the orthorhombic Cu3BiS3 phase. It was also found that the Cu3BiS3 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.41 eV, indicating that this compound has good properties to perform as absorbent layer in thin film solar cells.

A high-strength silicide phase in a stainless steel alloy designed for wear-resistant applications.

PubMed

Bowden, D; Krysiak, Y; Palatinus, L; Tsivoulas, D; Plana-Ruiz, S; Sarakinou, E; Kolb, U; Stewart, D; Preuss, M

2018-04-10

Hardfacing alloys provide strong, wear-resistant and corrosion-resistant coatings for extreme environments such as those within nuclear reactors. Here, we report an ultra-high-strength Fe-Cr-Ni silicide phase, named π-ferrosilicide, within a hardfacing Fe-based alloy. Electron diffraction tomography has allowed the determination of the atomic structure of this phase. Nanohardness testing indicates that the π-ferrosilicide phase is up to 2.5 times harder than the surrounding austenite and ferrite phases. The compressive strength of the π-ferrosilicide phase is exceptionally high and does not yield despite loading in excess of 1.6 GPa. Such a high-strength silicide phase could not only provide a new type of strong, wear-resistant and corrosion-resistant Fe-based coating, replacing more costly and hazardous Co-based alloys for nuclear applications, but also lead to the development of a new class of high-performance silicide-strengthened stainless steels, no longer reliant on carbon for strengthening.

Laser assisted processing; Proceedings of the Meeting, Hamburg, Federal Republic of Germany, Sept. 19, 20, 1988

NASA Astrophysics Data System (ADS)

Laude, Lucien D.; Rauscher, Gerhard

The use of lasers in industrial material processing is discussed in reviews and reports. Sections are devoted to high-precision laser machining, deposition methods, ablation and polymers, and synthesis and oxidation. Particular attention is given to laser cutting of steel sheets, laser micromachining of material surfaces, process control in laser soldering, laser-induced CVD of doped Si stripes on SOS and their characterization by piezoresistivity measurements, laser CVD of Pt spots on glass, laser deposition of GaAs, UV-laser photoablation of polymers, ArF excimer-laser ablation of HgCdTe semiconductor, pulsed laser synthesis of Ti silicides and nitrides, the kinetics of laser-assisted oxidation of metallic films, and excimer-laser-assisted etching of solids for microelectronics.

Search for New Superconductors for Energy and Power Applications

DTIC Science & Technology

2014-10-21

superconductors, borides , carbides, silicides, and chalcogenides. In addition, a number of thin film systems have been explored: A15s, superlattices, arrays of...YBa2Cu3O7 Bi2Se3 Eu-Si-C ErRh4B4 Bi2Sr2CaCu2O8 (UD, OD) Sb2Se3 V-Si-C (Ga,Mn)As CuO ZrSe2 Sm-Si-C Hf(FeCo)P Y1-xCaxCrO3 Fe-Te-Se BORIDES Hf-Fe-C-P...Physics, Warsaw, Poland Table III New superconductors, discovered by UCSD MURI team. BORIDES Tc (K) Nb0.9Zr0.1B 11.2 ZrNbxB 9.0 ZrVxB 9.0

Thin Film Electrodes with an Integral Current Collection Grid for Use with Solid Electrolytes

NASA Technical Reports Server (NTRS)

Ryan, M. A.; Kisor, A.; Williams, R. M.; Jeffries-Nakamura, B.; O'Connor, D.

1994-01-01

Thin film, high performance electrodes which can operate in high temperature environments are necessary for many devices which use a solid electrolyte. Electrodes of rhodium-tungsten alloy have been deposited on solid electrolyte using photolytic chemical vapor deposition (PCVD). A technique for depositing electrodes and current collection grids simultaneously has been developed using the prenucleation characteristics of PCVD. This technique makes it possible to fabricate electrodes which allow vapor transport through the thin (<1 (micro)m) portions of the electrode while integral thick grid lines improve the electronic conductivity of the electrode, thus improving overall performance.

Low Temperature Film Growth of the Oxides of Zinc, Aluminum, and Vanadium (and Related Systems, Oxides of Gold and Germanium, Nitrides of Aluminum and Tungsten) by Reactive Sputter Deposition.

DTIC Science & Technology

1988-02-01

the optical behavior of the material in its preswitched, or A Perkin-Elmer Model 330 UV - Visible -IR double beam ,% spectrophotometer with a specular...S ~ * ." at.* U a * . a. *%~ ~9g 0 ~ --- a.. ’ a * ~ .r~vaa- *a,~ * ~ * ~****.,*a,* *** UV - Visible -IR Optical Behavior of Sputter Deposited Gee x...Films deposited in 0 to 60% Ar were nominally germania. However, transmission in the UV - visible , the strength of the 245nm defect center, the optical

Microelectrode for energy and current control of nanotip field electron emitters

NASA Astrophysics Data System (ADS)

Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

2013-11-01

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10-30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Surface Modification of Poly(ethylene naphthalate) Substrate and Its Effect on SiNx Film Deposition by Atomic Hydrogen Annealing

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2007-07-01

The surface modification of a plastic substrate by atomic hydrogen annealing (AHA) was investigated for flexible displays. In this method, the plastic substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. Both surface roughness and contact angle of water droplet on poly(ethylene naphthalate) (PEN) substrates were increased by AHA. The surface of a PEN substrate was reduced by atomic hydrogen without optical transmittance degradation. In addition, the properties of a silicon nitride (SiNx) film deposited on a PEN substrate were changed by AHA, and the adhesion between the SiNx film and the PEN substrate was excellent for application to flexible displays.

Nanoplate-like tungsten trioxide (hydrate) films prepared by crystal-seed-assisted hydrothermal reaction

NASA Astrophysics Data System (ADS)

Wang, P.; Yang, L.; Dai, B.; Yang, Z.; Guo, S.; Zhu, J.

2017-07-01

Vertically-aligned WO3 nanoplates on transparent conducting fluorine-doped tin oxide (FTO) glass were prepared by a facile template-free crystal-seed-assisted hydrothermal method. The effects of the hydrothermal temperature and reaction time on the crystal structure and morphology of the products were investigated by XRD and SEM. The XRD results showed that the as-prepared thin films obtained below 150∘C comprised orthorhombic WO3 ṡ H2O and completely converted to monoclinic WO3 at 180∘C. It was also noted that there was a phase transformation from orthorhombic to monoclinic by increasing the reaction time from 1 to 12 h. SEM analysis revealed that WO3 thin films are composed of plate-like nanostructures.

Solution synthesis of metal silicide nanoparticles.

PubMed

McEnaney, Joshua M; Schaak, Raymond E

2015-02-02

Transition-metal silicides are part of an important family of intermetallic compounds, but the high-temperature reactions that are generally required to synthesize them preclude the formation of colloidal nanoparticles. Here, we show that palladium, copper, and nickel nanoparticles react with monophenylsilane in trioctylamine and squalane at 375 °C to form colloidal Pd(2)Si, Cu(3)Si, and Ni(2)Si nanoparticles, respectively. These metal silicide nanoparticles were screened as electrocatalysts for the hydrogen evolution reaction, and Pd(2)Si and Ni(2)Si were identified as active catalysts that require overpotentials of -192 and -243 mV, respectively, to produce cathodic current densities of -10 mA cm(-2).

Accelerated Exploration of Multi-principal Element Alloys for Structural Applications (Postprint)

DTIC Science & Technology

2015-04-27

SS phases (BCC, HCP and FCC), three silicide phases (M5Si3, M5Si4 and M3Si3), an ordered B2 phase, and two Laves phases (C14 and C15). In total, 453...alloys containing silicide phases (M5Si3, M5Si4, and M3Si2) is probably due to very negative, often below 50 kJ/mol [51 53] enthalpies of formation of...The majority of equiatomic alloys containing two or more phases are (SSþ IM) alloys.5. BCC, HCP and FCC SS phases, three silicide phases (M5Si3, M5Si4

Ablation properties of carbon/carbon composites with tungsten carbide

NASA Astrophysics Data System (ADS)

Yin, Jian; Zhang, Hongbo; Xiong, Xiang; Huang, Baiyun; Zuo, Jinlv

2009-02-01

The ablation properties and morphologies of carbon/carbon (C/C) composites with tungsten carbide (WC) filaments were investigated by ablation test on an arc heater and scanning electron microscopy. And the results were compared with those without tungsten carbide (WC) filaments tested under the same conditions. It shows that there is a big difference between C/C composites with and without WC filaments on both macroscopic and microscopic ablation morphologies and the ablation rates of the former are higher than the latter. It is found that the ablation process of C/C composites with WC filaments includes oxidation of carbon fibers, carbon matrices and WC, melting of WC and WO 3, and denudation of WC, WO 3 and C/C composites. Oxidation and melting of WC leads to the formation of holes in z directional carbon fiber bundles, which increases the coarseness of the ablation surfaces of the composites, speeds up ablation and leads to the higher ablation rate. Moreover, it is further found that the molten WC and WO 3 cannot form a continuous film on the ablation surface to prevent further ablation of C/C composites.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Lacquer polishing of X-ray optics

NASA Technical Reports Server (NTRS)

Catura, R. C.; Joki, E. G.; Roethig, D. T.; Brookover, W. J.

1987-01-01

Techniques for polishing figured X-ray optics by a lacquer-coating process are described. This acrylic lacquer coating has been applied with an optical quality of an eighth-wave in red light and very effectively covers surface roughness with spatial wavelengths less than about 0.2 mm. Tungsten films have been deposited on the lacquer coatings to provide highly efficient X-ray reflectivity.

Fused slurry silicide coatings for columbium alloy reentry heat shields. Volume 2: Experimental and coating process details

NASA Technical Reports Server (NTRS)

Fitzgerald, B.

1973-01-01

The experimental and coating process details are presented. The process specifications which were developed for the formulation and application of the R-512E fused slurry silicide coating using either an acrylic or nitrocellulose base slurry system is also discussed.

High quality of IWO films prepared at room temperature by reactive plasma deposition for photovoltaic devices

NASA Astrophysics Data System (ADS)

Lu, Zhongdan; Meng, Fanying; Cui, Yanfeng; Shi, Jianhua; Feng, Zhiqiang; Liu, Zhengxin

2013-02-01

High-quality tungsten-doped indium oxide (IWO) films are deposited on glass substrates at room temperature by the reactive plasma deposition (RPD) process under different oxygen/argon (O2/Ar) ratios. It is revealed that the O2/Ar ratio plays an important role in obtaining high conductivity without compromising the optical transmission of the films. The effect of the annealing temperature on the structure, electrical and optical properties of IWO thin films is investigated. The as-deposited film is crystalline and then re-crystallizes by postannealing. In this work, the IWO film with the O2/Ar ratio of 14% annealed at 220 °C exhibits the best electrical conductivity, with a lowest resistivity of 3.34 × 10-4 Ω cm and a highest mobility of 77.8 cm2 V-1 s-1, and which has the average transmittance of 85.50% (visible region) and 94.21% (near-infrared region). These optical and electrical characteristics of IWO films make them suitable for a-Si/C-Si heterojunction solar cell applications.

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

PubMed

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Photo-controllable thermoelectric properties with reversibility and photo-thermoelectric effects of tungsten trioxide accompanied by its photochromic phenomenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azuma, Chiori; Kawano, Takuto; Kakemoto, Hirofumi

2014-11-07

The addition of photo-controllable properties to tungsten trioxide (WO{sub 3}) is of interest for developing practical applications of WO{sub 3} as well as for interpreting such phenomena from scientific viewpoints. Here, a sputtered crystalline WO{sub 3} thin film generated thermoelectric power due to ultraviolet (UV) light-induced band-gap excitation and was accompanied by a photochromic reaction resulting from generating W{sup 5+} ions. The thermoelectric properties (electrical conductivity (σ) and Seebeck coefficient (S)) and coloration of WO{sub 3} could be reversibly switched by alternating the external stimulus between UV light irradiation and dark storage. After irradiating the film with UV light, σmore » increased, whereas the absolute value of S decreased, and the photochromic (coloration) reaction was detected. Notably, the opposite behavior was exhibited by WO{sub 3} after dark storage, and this reversible cycle could be repeated at least three times. Moreover, photo-thermoelectric effects (photo-conductive effect (photo-conductivity, σ{sub photo}) and photo-Seebeck effect (photo-Seebeck coefficient, S{sub photo})) were also detected in response to visible-light irradiation of the colored WO{sub 3} thin films. Under visible-light irradiation, σ{sub photo} and the absolute value of S{sub photo} increased and decreased, respectively. These effects are likely attributable to the excitation of electrons from the mid-gap visible light absorption band (W{sup 5+} state) to the conduction band of WO{sub 3}. Our findings demonstrate that the simultaneous, reversible switching of multiple properties of WO{sub 3} thin film is achieved by the application of an external stimulus and that this material exhibits photo-thermoelectric effects when irradiated with visible-light.« less

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Improved opto-electronic properties of silicon heterojunction solar cells with SiO x /Tungsten-doped indium oxide double anti-reflective coatings

NASA Astrophysics Data System (ADS)

Yu, Jian; Zhou, Jie; Bian, Jiantao; Zhang, Liping; Liu, Yucheng; Shi, Jianhua; Meng, Fanying; Liu, Jinning; Liu, Zhengxin

2017-08-01

Amorphous SiO x was prepared by plasma enhanced chemical vapor deposition (PECVD) to form SiO x /tungsten-doped indium oxide (IWO) double anti-reflective coatings for silicon heterojunction (SHJ) solar cell. The sheet resistance of SiO x /IWO stacks decreases due to plasma treatment during deposition process, which means thinner IWO film would be deposited for better optical response. However, the comparisons of three anti-reflective coating (ARC) structures reveal that SiO x film limits carier transport and the path of IWO-SiO x -Ag structure is non-conductive. The decrease of sheet resistance is defined as pseudo conductivity. IWO film capping with SiO x allows observably reduced reflectance and better response in 300-400 and 600-1200 nm wavelength ranges. Compared with IWO single ARC, the average reflection is reduced by 1.65% with 70 nm SiO x /80 nm IWO double anti-reflective coatings (DARCs) in 500-1200 nm wavelength range, leading to growing external quantum efficiency response, short circuit current density (J sc), and efficiency. After well optimization of SiO x /IWO stacks, an impressive efficiency of 23.08% is obtained with high J sc and without compromising open circuit voltage (V oc) and fill factor. SiO x /IWO DARCs provide better anti-reflective properties over a broad range of wavelength, showing promising application for SHJ solar cells.

Development of fused slurry silicide coatings for tantalum reentry heat shields

NASA Technical Reports Server (NTRS)

Warnock, R. V.; Stetson, A. R.

1972-01-01

A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template.

PubMed

Zhang, Zhang; Liu, Lifeng; Shimizu, Tomohiro; Senz, Stephan; Gösele, Ulrich

2010-02-05

Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

Rapid thermal annealing of Amorphous Hydrogenated Carbon (a-C:H) films

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1987-01-01

Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600 C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.

Direct Observation of the Thickness-Induced Crystallization and Stress Build-Up during Sputter-Deposition of Nanoscale Silicide Films.

PubMed

Krause, Bärbel; Abadias, Gregory; Michel, Anny; Wochner, Peter; Ibrahimkutty, Shyjumon; Baumbach, Tilo

2016-12-21

The kinetics of phase transitions during formation of small-scale systems are essential for many applications. However, their experimental observation remains challenging, making it difficult to elucidate the underlying fundamental mechanisms. Here, we combine in situ and real-time synchrotron X-ray diffraction (XRD) and X-ray reflectivity (XRR) experiments with substrate curvature measurements during deposition of nanoscale Mo and Mo 1-x Si x films on amorphous Si (a-Si). The simultaneous measurements provide direct evidence of a spontaneous, thickness-dependent amorphous-to-crystalline (a-c) phase transition, associated with tensile stress build-up and surface roughening. This phase transformation is thermodynamically driven, the metastable amorphous layer being initially stabilized by the contributions of surface and interface energies. A quantitative analysis of the XRD data, complemented by simulations of the transformation kinetics, unveils an interface-controlled crystallization process. This a-c phase transition is also dominating the stress evolution. While stress build-up can significantly limit the performance of devices based on nanostructures and thin films, it can also trigger the formation of these structures. The simultaneous in situ access to the stress signal itself, and to its microstructural origins during structure formation, opens new design routes for tailoring nanoscale devices.

Combined Photoemission Spectroscopy and Electrochemical Study of a Mixture of (Oxy)carbides as Potential Innovative Supports and Electrocatalysts.

PubMed

Calvillo, Laura; Valero-Vidal, Carlos; Agnoli, Stefano; Sezen, Hikmet; Rüdiger, Celine; Kunze-Liebhäuser, Julia; Granozzi, Gaetano

2016-08-03

Active and stable non-noble metal materials, able to substitute Pt as catalyst or to reduce the Pt amount, are vitally important for the extended commercialization of energy conversion technologies, such as fuel cells and electrolyzers. Here, we report a fundamental study of nonstoichiometric tungsten carbide (WxC) and its interaction with titanium oxycarbide (TiOxCy) under electrochemical working conditions. In particular, the electrochemical activity and stability of the WxC/TiOxCy system toward the ethanol electrooxidation reaction (EOR) and hydrogen evolution reaction (HER) are investigated. The chemical changes caused by the applied potential are established by combining photoemission spectroscopy and electrochemistry. WxC is not active toward the ethanol electrooxidation reaction at room temperature but it is highly stable under these conditions thanks to the formation of a passive thin film on the surface, consisting mainly of WO2 and W2O5, which prevents the full oxidation of WxC. In addition, WxC is able to adsorb ethanol, forming ethoxy groups on the surface, which constitutes the first step for the ethanol oxidation. The interaction between WxC and TiOxCy plays an important role in the electrochemical stability of WxC since specific orientations of the substrate are able to stabilize WxC and prevent its corrosion. The beneficial interaction with the substrate and the specific surface chemistry makes tungsten carbide a good electrocatalyst support or cocatalyst for direct ethanol fuel cells. However, WxC is active toward the HER and chemically stable under hydrogen reduction conditions, since no changes in the chemical composition or dissolution of the film are observed. This makes tungsten carbide a good candidate as electrocatalyst support or cocatalyst for the electrochemical production of hydrogen.

Laser patterning of diamond films

NASA Astrophysics Data System (ADS)

Narayan, J.; Chen, X.

1992-04-01

Selective deposition and fine-scale patterning of hot filament deposited diamond films by the use of pulsed laser irradiation on silicon and copper substrates are reported. The substrates were abraded with diamond and alumina powders before hot-filament chemical vapor deposition. A drastic enhancement in diamond nucleation (using hot-filament chemical vapor deposition) was observed on specimens treated with diamond powder, whereas enhancement on specimens pretreated with alumina powder was relatively insignificant. It is found that the seeding of diamond crystals was substantially reduced by pulsed laser annealing/melting which removes the plastic damage as well as the seed crystals introduced by diamond powder pretreatment. The selective deposition or fine-scale patterning of diamond films was achieved either by a shadow masking or by scanning a focused laser beam to generate desired patterns. The nucleation can also be enhanced by laser deposition of thin films, such as diamond-like carbon and tungsten carbide (WC), and selective deposition and patterning achieved by controlled removal or deposition of the above films.

Constricted glow discharge plasma source

DOEpatents

Anders, Andre; Anders, Simone; Dickinson, Michael; Rubin, Michael; Newman, Nathan

2000-01-01

A constricted glow discharge chamber and method are disclosed. The polarity and geometry of the constricted glow discharge plasma source is set so that the contamination and energy of the ions discharged from the source are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The source is suitable for applying films of nitrides such as gallium nitride and oxides such as tungsten oxide and for enriching other substances in material surfaces such as oxygen and water vapor, which are difficult process as plasma in any known devices and methods. The source can also be used to assist the deposition of films such as metal films by providing low-energy ions such as argon ions.

Analysis of molecular interaction using a pulse-induced ring-down compression ATR-DIRLD step-scan time resolved spectroscopy/2D-IR

NASA Astrophysics Data System (ADS)

Nishikawa, Yuji; Ito, Hiroto; Noda, Isao

2018-03-01

A rheo-optical method, based on pulsed compression ATR dynamic infrared linear dichroism (DIRLD) step scan time-resolved-FT-IR/2D-IR spectroscopy, is further improved. By inserting a tungsten carbide block with massive weight between a film sample and a piezo electric actuator, a ring-down response was successfully generated according to the inertial effect. The improved method is used to analyze molecular interactions in cellulose acetate propionate (CAP) films including tricresyl-phosphate (TCP), as compared with cellulose triacetate (CTA) films with the TCP case. The result suggests that the existence of molecular interaction among propionyl groups in the CAP, the TCP's Methyl, and phenyl rings, which is not observed in the CTA-TCP system.

{sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmening, Thomas; Eckert, Hellmut, E-mail: eckerth@uni-muenster.de; Fehse, Constanze M.

The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients andmore » the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.« less

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

PubMed Central

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-01-01

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

PubMed

Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

2016-06-22

A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2.

Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing.

PubMed

Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

2017-08-10

In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H 2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO 2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 10 3  Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

Microelectrode for energy and current control of nanotip field electron emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lüneburg, S.; Müller, M., E-mail: m.mueller@fhi-berlin.mpg.de; Paarmann, A., E-mail: alexander.paarmann@fhi-berlin.mpg.de

2013-11-18

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Effect of oxygen partial pressure and VO2 content on hexagonal WO3 thin films synthesized by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Kaushal, Ajay; Kaur, Davinder

2011-06-01

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO3 thin films. XRD results show the hexagonal phase of deposited WO3 thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO3 thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO2 content on structural, electrochemical, and optical properties of (WO3)1- x (VO2) x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO2-WO3 thin film electrode with higher VO2 content ( x ≥ 0.2). Increase of VO2 content in (WO3)1- x (VO2) x films leads to red shift in optical band gap.

Preparation and characterization of Pt loaded WO3 films suitable for gas sensing applications

NASA Astrophysics Data System (ADS)

Jolly Bose, R.; Illyasukutty, Navas; Tan, K. S.; Rawat, R. S.; Vadakke Matham, Murukesan; Kohler, Heinz; Mahadevan Pillai, V. P.

2018-05-01

This paper presents the preparation of nanostructured platinum (Pt) loaded tungsten oxide (WO3) thin films by radio frequency (RF) magnetron sputtering technique. Even though, Pt loading does not produce any phase change in WO3 lattice, it deteriorates the crystalline quality and induces defects on WO3 films. The Pt loading in WO3 has profound impact on structural and optical properties of the films by which the particle size, lattice strain and optical band gap energy are reduced. Nanoporous film with reduced particle size is obtained for 5 wt% Pt loaded WO3 sample which is crucial for gas sensors. Hence the sensing response of 5 wt% Pt loaded sample is tested towards carbon monoxide (CO) gas along with pure WO3 sample. The sensing response of Pt loaded sample is nearly 15 times higher than pure WO3 sample in non-humid ambience at an operating temperature 200 °C. This indicates the suitability of the prepared films for gas sensors. The sensing response of pure WO3 film depends on the humidity while the Pt loaded WO3 film shows stable response in both humid and non-humid ambiences.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Advanced small rocket chambers: Option 1, 14 lbf Ir-Re rocket

NASA Technical Reports Server (NTRS)

Jassowski, Donald M.; Gage, Mark L.

1992-01-01

A high performance Ir-Re 14 lbf (62 N) chamber and nozzle which can be a direct replacement for a production engine was designed, built, hot fired and vibration acceptance tested. It passed all acceptance tests satisfactorily and demonstrated a 20 sec increase in specific impulse (Is) over the conventional 14 lbf silicide coated Cb chamber. The high performance engine uses the production valve and injector without modification. Incorporation of a secondary mixing device or Boundary Layer Trip within the combustion chamber results in elimination of the fuel film coolant, improvement in flow uniformity, the 20 sec performance increase, and reduction of a potential source of spacecraft contamination. Measured Is was 305 sec at 75:1 area ratio, with monomenthylhydrazine and nitrogen tetroxide propellants. Qualification tests remain to be done.

Simultaneous nanocalorimetry and fast XRD measurements to study the silicide formation in Pd/a-Si bilayers.

PubMed

Molina-Ruiz, Manel; Ferrando-Villalba, Pablo; Rodríguez-Tinoco, Cristian; Garcia, Gemma; Rodríguez-Viejo, Javier; Peral, Inma; Lopeandía, Aitor F

2015-05-01

The use of a membrane-based chip nanocalorimeter in a powder diffraction beamline is described. Simultaneous wide-angle X-ray scattering and scanning nanocalorimetric measurements are performed on a thin-film stack of palladium/amorphous silicon (Pd/a-Si) at heating rates from 0.1 to 10 K s(-1). The nanocalorimeter works under a power-compensation scheme previously developed by the authors. Kinetic and structural information of the consumed and created phases can be obtained from the combined techniques. The formation of Pd2Si produces a broad calorimetric peak that contains overlapping individual processes. It is shown that Pd consumption precedes the formation of the crystalline Pd2Si phase and that the crystallite size depends on the heating rate of the experiment.

Models of WO x films growth during pulsed laser deposition at elevated pressures of reactive gas

NASA Astrophysics Data System (ADS)

Gnedovets, A. G.; Fominski, V. Y.; Nevolin, V. N.; Romanov, R. I.; Fominski, D. V.; Soloviev, A. A.

2017-12-01

The films of tungsten oxides were prepared by pulsed laser ablation of W target in a reactive gas atmosphere (air of laboratory humidity). Optical analysis and ion signal measurements for the laser plume allowed to recognise a threshold gas pressure that suppresses the deposition of non-scattered atomic flux from the plume. When the pressure exceeds about 40 Pa, the films grow due to the deposition of species that could be formed in collisions of W atoms with reactive molecules (e.g., O2). Kinetic Monte Carlo method was used for modelling film growth. Comparison of the model structures with the experimentally prepared films has shown that the growth mechanism of ballistic deposition at a pressure of 40 Pa could be changed on the diffusion limited aggregation at a pressure of ~100 Pa. Thus, a cauliflower structure of the film transformed to a web-like structure. For good correlation of experimental and model structures of WO x , a dimension of structural elements in the model should coincide with W-O cluster size.

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2009-07-01

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors

NASA Astrophysics Data System (ADS)

Devi, A.; Shivashankar, S. A.; Samuelson, A. G.

2002-06-01

Deposition of Al203 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al203 involves the corrosive reactant AICl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tris-tetramethyl-heptanedionate [ Al(thd)3] and aluminium tris-acetylacetonate [ Al(acac)3] and their application to the CVD of Al203 films. Crystalline A1203 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)3 and AI(acac)3. The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100 °C. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

Experimental characterization of electrochemically polymerized polycarbazole film and study of its behavior with different metals contacts

NASA Astrophysics Data System (ADS)

Srivastava, Aditi; Chakrabarti, P.

2017-12-01

In this paper, we present the method of fabrication, experimental characterization, and comparison of electrical parameters of semiconducting polycarbazole film with different rectifying metals contacts. Electrochemical polymerization and deposition of organic semiconductor, i.e., polycarbazole on ITO-coated glass substrate, were performed using an electrochemical workstation. Experimental characterization of the prepared polymer film was done in respect of morphology, absorption, bandgap, and thickness. The stability and electro-activity of polycarbazole film were verified by the cyclic voltammetric method. Study of the behavior of prepared polycarbazole film with the different metals contacts such as Aluminum, Copper, Tungsten, and Tin has been done using semiconductor device analyzer. Various electrical parameters such as barrier height, ideality factor, and reverse saturation current have been extracted with different metal contacts, and the values were compared and contrasted. The nature of I- V characteristic of polycarbazole film in non-contact mode has also been analyzed using scanning tunneling microscope. The rectifying I- V characteristics obtained with different metals contacts have also been validated by the simulation on Deckbuild platform of the of ATLAS® software tool from Silvaco Inc.

Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.

DTIC Science & Technology

1980-10-01

requires the simultaneous cathodic deposi- tion of silicon and carbon under conditions where reaction to form SiC will occur. In this study sodium or...reactivity with the melt. Nickel suffers from the disadvantage that it reacts with silicon to form nickel silicides , but the concentration of silicides in

Dosimetric evaluation of lead and tungsten eye shields in electron beam treatment.

PubMed

Shiu, A S; Tung, S S; Gastorf, R J; Hogstrom, K R; Morrison, W H; Peters, L J

1996-06-01

The purpose of this study is to report that commercially available eye shields (designed for orthovoltage x-rays) are inadequate to protect the ocular structures from penetrating electrons for electron beam energies equal to or greater than 6 MeV. Therefore, a prototype medium size tungsten eye shield was designed and fabricated. The advantages of the tungsten eye shield over lead are discussed. Electron beams (6-9 MeV) are often used to irradiate eyelid tumors to curative doses. Eye shields can be placed under the eyelids to protect the globe. Film and thermoluminescent dosimeters (TLDs) were used within a specially constructed polystyrene eye phantom to determine the effectiveness of various commercially available internal eye shields (designed for orthovoltage x-rays). The same procedures were used to evaluate a prototype medium size tungsten eye shield (2.8 mm thick), which was designed and fabricated for protection of the globe from penetrating electrons for electron beam energy equal to 9 MeV. A mini-TLD was used to measure the dose enhancement due to electrons backscattered off the tungsten eye shield, both with or without a dental acrylic coating that is required to reduce discomfort, permit sterilization of the shield, and reduce the dose contribution from backscattered electrons. Transmission of a 6 MeV electron beam through a 1.7 mm thick lead eye shield was found to be 50% on the surface (cornea) of the phantom and 27% at a depth of 6 mm (lens). The thickness of lead required to stop 6-9 MeV electron beams is impractical. In place of lead, a prototype medium size tungsten eye shield was made. For 6 to 9 MeV electrons, the doses measured on the surface (cornea) and at 6 mm (lens) and 21 mm (retina) depths were all less than 5% of the maximum dose of the open field (4 x 4 cm). Electrons backscattered off a tungsten eye shield without acrylic coating increased the lid dose from 85 to 123% at 6 MeV and 87 to 119% at 9 MeV. For the tungsten eye shield coated with 2-3 mm of dental acrylic, the lid dose was increased from 85 to 98.5% at 6 MeV and 86 to 106% at 9 MeV. Commercially available eye shields were evaluated and found to be clearly inadequate to protect the ocular structures for electron beam energies equal to or greater than 6 MeV. A tungsten eye shield has been found to provide adequate protection for electrons up to 9 MeV. The increase in lid dose due to electrons backscattered off the tungsten eye shield should be considered in the dose prescription. A minimum thickness of 2 mm dental acrylic on the beam entrance surface of the tungsten eye shield was found to reduce the backscattered electron effect to acceptable levels.

Improving the corrosion properties of magnesium AZ31 alloy GTA weld metal using microarc oxidation process

NASA Astrophysics Data System (ADS)

Siva Prasad, M.; Ashfaq, M.; Kishore Babu, N.; Sreekanth, A.; Sivaprasad, K.; Muthupandi, V.

2017-05-01

In this work, the morphology, phase composition, and corrosion properties of microarc oxidized (MAO) gas tungsten arc (GTA) weldments of AZ31 alloy were investigated. Autogenous gas tungsten arc welds were made as full penetration bead-on-plate welding under the alternating-current mode. A uniform oxide layer was developed on the surface of the specimens with MAO treatment in silicate-based alkaline electrolytes for different oxidation times. The corrosion behavior of the samples was evaluated by potentiodynamic polarization and electrochemical impedance spectroscopy. The oxide film improved the corrosion resistance substantially compared to the uncoated specimens. The sample coated for 10 min exhibited better corrosion properties. The corrosion resistance of the coatings was concluded to strongly depend on the morphology, whereas the phase composition and thickness were concluded to only slightly affect the corrosion resistance.

Guidelines for bottom-up approach of nanocarbon film formation from pentacene using heated tungsten on quartz substrate without metal catalyst

NASA Astrophysics Data System (ADS)

Heya, Akira; Matsuo, Naoto

2018-04-01

The guidelines for a bottom-up approach of nanographene formation from pentacene using heated tungsten were investigated using a novel method called hot mesh deposition (HMD). In this method, a heated W mesh was set between a pentacene source and a quartz substrate. Pentacene molecules were decomposed by the heated W mesh. The generated pentacene-based decomposed precursors were then deposited on the quartz substrate. The pentacene dimer (peripentacene) was obtained from pentacene by HMD using two heated catalysts. As expected from the calculation with the density functional theory in the literature, it was confirmed that the pentacene dimer can be formed by a reaction between pentacene and 6,13-dihydropentacene. This technique can be applied to the formation of novel nanographene on various substrates without metal catalysts.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

ESD protection design for advanced CMOS

NASA Astrophysics Data System (ADS)

Huang, Jin B.; Wang, Gewen

2001-10-01

ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

Magnetron sputtering fabrication and photoelectric properties of WSe2 film solar cell device

NASA Astrophysics Data System (ADS)

Mao, Xu; Zou, Jianpeng; Li, Hongchao; Song, Zhengqi; He, Siru

2018-06-01

Tungsten diselenide (WSe2) films with different growing orientations exhibit diverse photoelectric properties. The WSe2 film with C-axis⊥substrate texture has been prepared and applied to thin-film solar cells. W nanofilms with a thickness of 270 nm were deposited onto the Mo bottom electrode and then heat-treated in selenium vapor to synthesize WSe2 films with a thickness of 1 μm. ZnO films were deposited onto WSe2 films to form a P-N junction and ITO films were deposited subsequently as the conductive layer. X-ray diffractometry, scanning electron microscopy and UV-vis-NIR spectro-analysis instrument were employed to analyze the phase composition, optical absorptivity and micromorphology of WSe2 films and the WSe2 solar cell device. WSe2 films exhibit excellent photoelectric performance with an optical absorption coefficient greater than 105 cm-1 across the visible spectrum. The calculated direct and indirect band gap of the WSe2 films is 1.48 eV and 1.25 eV, respectively. With the application of standard glass/Mo/WSe2/ZnO/ITO/Ag device structure, the open-circuit voltage of the battery device is 82 mV. The short-circuit current density is 2.98 mA/cm2 and the filling factor is 0.32. The photoelectric conversion efficiency of the WSe2 film solar cell device is 0.79%.

Electronic and chemical structure of metal-silicon interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, P. J.; Grunthaner, F. J.

1984-01-01

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Large-area Co-silicide nanodot arrays produced by colloidal nanosphere lithography and thermal annealing.

PubMed

Cheng, S L; Wong, S L; Lu, S W; Chen, H

2008-09-01

We report here the successful fabrication of large-area size-tunable periodic arrays of cobalt and Co-silicide nanodots on silicon substrates by employing the colloidal nanosphere lithography (NSL) technique and heat treatments. The growth of low-resistivity epitaxial CoSi(2) was found to be more favorable for the samples with smaller Co nanodot sizes. The sizes of the epitaxial CoSi(2) nanodots can be tuned from 50 to 100 nm by varying the diameter of the colloidal spheres and annealing temperatures. The epitaxial CoSi(2) nanodots were found to grow with an epitaxial orientation with respect to the (001)Si substrates: [001]CoSi(2)//[001]Si and (200)CoSi(2)//(400)Si. From the results of planview HRTEM, XTEM, and SAED analysis, the epitaxial CoSi(2) nanodots were identified to be inverse pyramids in shape, and the average sizes of the faceted silicide nanodots were measured to decrease with annealing temperature. The observed results present the exciting prospect that with appropriate controls, the colloidal NSL technique promises to facilitate the growth of a variety of well-ordered silicide nanodots with selected shape, size, and periodicity.

Sputter-deposited WO x and MoO x for hole selective contacts

DOE PAGES

Bivour, Martin; Zähringer, Florian; Ndione, Paul F.; ...

2017-09-21

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

Sputter-deposited WO x and MoO x for hole selective contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bivour, Martin; Zähringer, Florian; Ndione, Paul F.

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

PubMed

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Electrical characterization of n/p-type nickel silicide/silicon junctions by Sb segregation.

PubMed

Jun, Myungsim; Park, Youngsam; Hyun, Younghoon; Choi, Sung-Jin; Zyung, Taehyung; Jang, Moongyu

2011-08-01

In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity.

Thermoelectric silicides: A review

NASA Astrophysics Data System (ADS)

Nozariasbmarz, Amin; Agarwal, Aditi; Coutant, Zachary A.; Hall, Michael J.; Liu, Jie; Liu, Runze; Malhotra, Abhishek; Norouzzadeh, Payam; Öztürk, Mehmet C.; Ramesh, Viswanath P.; Sargolzaeiaval, Yasaman; Suarez, Francisco; Vashaee, Daryoosh

2017-05-01

Traditional research on thermoelectric materials focused on improving the figure-of-merit z T to enhance the energy conversion efficiency. With further growth and commercialization of thermoelectric technology beyond niche applications, other factors such as materials availability, toxicity, cost, recyclability, thermal stability, chemical and mechanical properties, and ease of fabrication become important for making viable technologies. Several silicide alloys were identified that have the potential to fulfill these requirements. These materials are of interest due to their abundancy in earth’s crust (e.g., silicon), non-toxicity, and good physical and chemical properties. In this paper, an overview of the silicide thermoelectrics from traditional alloys to advanced material structures is presented. In addition, some of the most effective approaches as well as fundamental physical concepts for designing and developing efficient thermoelectric materials are presented and future perspectives are discussed.

Enhanced light absorption in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe.

PubMed

Guo, Jingshu; Wu, Zhiwei; Zhao, Yanli

2017-05-01

We investigate the light absorption enhancement in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe, which can provide high internal quantum efficiency. By using aab0-quasi-TE hybrid modes for the first time, a high absorptance of 95.6% is achieved in 5 nm thick Au stripe with area of only 0.14 μm², without using resonance structure. In theory, the responsivity, dark current, and 3dB bandwidth of the corresponding device are 0.146 A/W, 8.03 nA, and 88 GHz, respectively. For most silicides, the quasi-TM mode should be used in this device, and an optimized PtSi device has a responsivity of 0.71 A/W and a dark current of 35.9 μA.

Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focusedmore » ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.« less

Absorption and electrochromic modulation of near-infrared light: realized by tungsten suboxide

NASA Astrophysics Data System (ADS)

Li, Guilian; Zhang, Shouhao; Guo, Chongshen; Liu, Shaoqin

2016-05-01

In the present study, needle-like tungsten suboxide W18O49 nanocrystals were fabricated as the optical active substance to realize the aim of optical control of near-infrared light. The W18O49 nanocrystals were selected in this regard due to their unique optical performance. As revealed by the powder absorption result, the needle-like W18O49 nanocrystals show strong and wide photoabsorption in the entire near infrared region of 780-2500 nm, from which thin films with the W18O49 nanocrystal coating thus benefits and can strongly shield off almost all near infrared irradiation, whereas transmitting the majority of visible light. To make it more tunable, the W18O49 nanocrystals were finally assembled onto an ITO glass via the layer-by-layer strategy for later electrochromic investigation. The nanostructured architectures of the W18O49 nanocrystal electrochromic films exhibit high contrast, faster switching response, higher coloration efficiencies (150 cm2 C-1 at 650 nm and 255 cm2 C-1 at 1300 nm), better long-term redox switching stability (reversibility of 98% after 500 cycles) and wide electrochromic spectrum coverage of both the visible and infrared regions.In the present study, needle-like tungsten suboxide W18O49 nanocrystals were fabricated as the optical active substance to realize the aim of optical control of near-infrared light. The W18O49 nanocrystals were selected in this regard due to their unique optical performance. As revealed by the powder absorption result, the needle-like W18O49 nanocrystals show strong and wide photoabsorption in the entire near infrared region of 780-2500 nm, from which thin films with the W18O49 nanocrystal coating thus benefits and can strongly shield off almost all near infrared irradiation, whereas transmitting the majority of visible light. To make it more tunable, the W18O49 nanocrystals were finally assembled onto an ITO glass via the layer-by-layer strategy for later electrochromic investigation. The nanostructured architectures of the W18O49 nanocrystal electrochromic films exhibit high contrast, faster switching response, higher coloration efficiencies (150 cm2 C-1 at 650 nm and 255 cm2 C-1 at 1300 nm), better long-term redox switching stability (reversibility of 98% after 500 cycles) and wide electrochromic spectrum coverage of both the visible and infrared regions. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09147k

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

Evaluation of steam corrosion and water quenching behavior of zirconium-silicide coated LWR fuel claddings

NASA Astrophysics Data System (ADS)

Yeom, Hwasung; Lockhart, Cody; Mariani, Robert; Xu, Peng; Corradini, Michael; Sridharan, Kumar

2018-02-01

This study investigates steam corrosion of bulk ZrSi2, pure Si, and zirconium-silicide coatings as well as water quenching behavior of ZrSi2 coatings to evaluate its feasibility as a potential accident-tolerant fuel cladding coating material in light water nuclear reactor. The ZrSi2 coating and Zr2Si-ZrSi2 coating were deposited on Zircaloy-4 flats, SiC flats, and cylindrical Zircaloy-4 rodlets using magnetron sputter deposition. Bulk ZrSi2 and pure Si samples showed weight loss after the corrosion test in pure steam at 400 °C and 10.3 MPa for 72 h. Silicon depletion on the ZrSi2 surface during the steam test was related to the surface recession observed in the silicon samples. ZrSi2 coating (∼3.9 μm) pre-oxidized in 700 °C air prevented substrate oxidation but thin porous ZrO2 formed on the coating. The only condition which achieved complete silicon immobilization in the oxide scale in aqueous environments was the formation of ZrSiO4 via ZrSi2 coating oxidation in 1400 °C air. In addition, ZrSi2 coatings were beneficial in enhancing quenching heat transfer - the minimum film boiling temperature increased by 6-8% in the three different environmental conditions tested. During repeated thermal cycles (water quenching from 700 °C to 85 °C for 20 s) performed as a part of quench tests, no spallation and cracking was observed and the coating prevented oxidation of the underlying Zircaloy-4 substrate.

Recent developments of x-ray lithography in Canada

NASA Astrophysics Data System (ADS)

Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

1991-08-01

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliabilitymore » of device under NBTIS.« less

Characteristics of a promising new thermoelectric material - Ruthenium silicide

NASA Technical Reports Server (NTRS)

Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

1991-01-01

A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

On the Alloying and Properties of Tetragonal Nb₅Si₃ in Nb-Silicide Based Alloys.

PubMed

Tsakiropoulos, Panos

2018-01-04

The alloying of Nb₅Si₃ modifies its properties. Actual compositions of (Nb,TM)₅X₃ silicides in developmental alloys, where X = Al + B + Ge + Si + Sn and TM is a transition and/or refractory metal, were used to calculate the composition weighted differences in electronegativity (Δχ) and an average valence electron concentration (VEC) and the solubility range of X to study the alloying and properties of the silicide. The calculations gave 4.11 < VEC < 4.45, 0.103 < Δχ < 0.415 and 33.6 < X < 41.6 at.%. In the silicide in Nb-24Ti-18Si-5Al-5Cr alloys with single addition of 5 at.% B, Ge, Hf, Mo, Sn and Ta, the solubility range of X decreased compared with the unalloyed Nb₅Si₃ or exceeded 40.5 at.% when B was with Hf or Mo or Sn and the Δχ decreased with increasing X. The Ge concentration increased with increasing Ti and the Hf concentration increased and decreased with increasing Ti or Nb respectively. The B and Sn concentrations respectively decreased and increased with increasing Ti and also depended on other additions in the silicide. The concentration of Sn was related to VEC and the concentrations of B and Ge were related to Δχ. The alloying of Nb₅Si₃ was demonstrated in Δχ versus VEC maps. Effects of alloying on the coefficient of thermal expansion (CTE) anisotropy, Young's modulus, hardness and creep data were discussed. Compared with the hardness of binary Nb₅Si₃ (1360 HV), the hardness increased in silicides with Ge and dropped below 1360 HV when Al, B and Sn were present without Ge. The Al effect on hardness depended on other elements substituting Si. Sn reduced the hardness. Ti or Hf reduced the hardness more than Cr in Nb₅Si₃ without Ge. The (Nb,Hf)₅(Si,Al)₃ had the lowest hardness. VEC differentiated the effects of additions on the hardness of Nb₅Si₃ alloyed with Ge. Deterioration of the creep of alloyed Nb₅Si₃ was accompanied by decrease of VEC and increase or decrease of Δχ depending on alloying addition(s).

CTAB assisted synthesis of tungsten oxide nanoplates as an efficient low temperature NOX sensor

NASA Astrophysics Data System (ADS)

Mehta, Swati S.; Tamboli, Mohaseen S.; Mulla, Imtiaz S.; Suryavanshi, Sharad S.

2018-02-01

Tungsten oxide nanoplates with porous morphology were effectively prepared by acidification using CTAB (HexadeCetyltrimethyl ammonium bromide) as a surfactant. For characterization, the synthesized materials were subjected to X-Ray powder diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), UV-Visible spectroscopy (UV-Vis) and surface area (BET) measurements. The morphology and size of the particles were controlled by solution acidity. The BET results confirmed that the materials are well crystallized and mesoporous in nature. The nanocrystalline powder was used to prepare thick films by screen printing on alumina substrate for the investigation of gas sensing properties. The gas response measurements revealed that the samples acidified using 10 M H2SO4 exhibits highest response of 91% towards NOX at optimum temperature of 200 °C for 100 ppm, and it also exhibits 35% response at room temperature.

Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study

NASA Astrophysics Data System (ADS)

Lanzillo, Nicholas A.; Dixit, Hemant; Milosevic, Erik; Niu, Chengyu; Carr, Adra V.; Oldiges, Phil; Raymond, Mark V.; Cho, Jin; Standaert, Theodorus E.; Kamineni, Vimal K.

2018-04-01

Several major electron scattering mechanisms in tungsten (W) are evaluated using a combination of first-principles density functional theory, a Non-Equilibrium Green's Function formalism, and thin film Kelvin 4-point sheet resistance measurements. The impact of grain boundary scattering is found to be roughly an order of magnitude larger than the impact of defect scattering. Ab initio simulations predict average grain boundary reflection coefficients for a number of twin grain boundaries to lie in the range r = 0.47 to r = 0.62, while experimental data can be fit to the empirical Mayadas-Schatzkes model with a comparable but slightly larger value of r = 0.69. The experimental and simulation data for grain boundary resistivity as a function of grain size show excellent agreement. These results provide crucial insights for understanding the impact of scaling of W-based contacts between active devices and back-end-of-line interconnects in next-generation semiconductor technology.

Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

PubMed

Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

2016-01-01

We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

Inorganic fullerene-like tungsten disulfide nanocoating for friction reduction of nickel-titanium alloys.

PubMed

Samorodnitzky-Naveh, Gili R; Redlich, Meir; Rapoport, Lev; Feldman, Yishay; Tenne, Reshef

2009-12-01

To fabricate a friction-reducing coating onto different nickel-titanium (NiTi) substrates using inorganic fullerene-like tungsten disulfide (IF-WS(2)) nanoparticles and to estimate in vitro friction reducing extent of the coating. Different NiTi substrates were coated with cobalt and IF-WS(2) nanoparticles film by the electrodeposition procedure. Coating composition analyses was made by scanning-electron microscopy, energy dispersive x-ray spectroscopy, x-ray powder diffractometry and x-ray photoelectron spectroscopy. Friction evaluation was carried out using standard tribological tests and an Instron system. Stable and well-adhered cobalt + IF-WS(2) coating of the NiTi substrates was obtained. Friction tests presented up to 66% reduction of the friction coefficient. NiTi alloy is widely used for many medical appliances; hence, this unique friction-reducing coating could be implemented to provide better manipulation and lower piercing rates.

Preliminary investigation and application of alternate dry gas seal face materials{copyright}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evenson, R.; Peterson, R.; Hanson, R.

1994-01-01

Traditional seal mating ring materials such as tungsten carbide (WC) are commonly used in high pressure centrifugal gas compressor dry gas (gas lubricating film) seal applications. Although these materials possess desirable properties for minimizing thermal distortion and deformation when subjected to pressure and centrifugal force, they have low toughness, i.e., they are brittle and have poor resistance to thermal shock. It has been found that these materials are easily heat checked during seal face touchdown. Heat checking as well as other crack indications inherent in these materials can quickly propagate, resulting in a catastrophic seal ring failure. In this paper,more » an investigation of alternate seal face materials is described. Two ductile, nitrided, low ferrous materials proved to be readily manufacturable into dry gas seal rings and performed comparably to tungsten carbide in natural gas service. 10 refs., 13 figs., 5 tabs.« less

Low-Temperature Selective Growth of Tungsten Oxide Nanowires by Controlled Nanoscale Stress Induction

PubMed Central

Na, Hyungjoo; Eun, Youngkee; Kim, Min-Ook; Choi, Jungwook; Kim, Jongbaeg

2015-01-01

We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750–900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature. PMID:26666843

Dynamic SEM wear studies of tungsten carbide cermets

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Buckley, D. H.

1975-01-01

Dynamic friction and wear experiments were conducted in a scanning electron microscope. The wear behavior of pure tungsten carbide and composite with 6 and 15 weight percent cobalt binder was examined. Etching of the binder was done to selectively determine the role of the binder in the wear process. Dynamic experiments were conducted as the WC and bonded WC cermet surfaces were transversed by a 50 micron radiused diamond stylus. These studies show that the predominant wear process in WC is fracture initiated by plastic deformation. The wear of the etched cermets is similar to pure WC. The presence of the cobalt binder reduces both friction and wear. The cementing action of the cobalt reduces granular separation and promotes a dense polished layer because of its low shear strength film-forming properties. The wear debris generated from unetched surface is approximately the same composition as the bulk.

Signal analysis of voltage noise in welding arcs. [gas tungsten arc welding

NASA Technical Reports Server (NTRS)

Elis, E.; Eagar, T. W.

1982-01-01

Gas tungsten arc welds were made on low alloy steel plates to which intentional defects (discontinuities) were imposed. Disruption of shielding gas, welding over surface films, and tack welds produce changes in what is otherwise a relatively uniform voltage signal. The arc voltage was 15 volts + or - 2 volts with 300 mV ripple noise from the power supply. Changes in this steady noise voltage varied from 50 mV to less than one millivolt depending on the severity and the type of change experienced. In some instances the changes were easily detected by analysis of the signal in real time, while in other cases the signal had to transformed to the frequency domain in order to detect the changes. Discontinuities as small as 1.5 mm in length were detected. The ultimate sensitivity and reproducibility of the technique is still being investigated.