The Rate of Charge Tunneling through Self-Assembled Monolayers is Insensitive to Many Functional Group Substitutions**

PubMed Central

Yoon, Hyo Jae; Shapiro, Nathan D.; Park, Kyeng Min; Thuo, Martin M.; Soh, Siowling

2012-01-01

This paper characterizes the rates of charge transport by tunneling across a series of molecules—arrayed in self-assembled monolayers—containing a common head group and body (HS(CH2)4CONH(CH2)2-) and structurally varied tail groups (-R). These molecules are assembled in junctions of the structure AgTS/SAM//Ga2O3/EGaIn. Over a range of common aliphatic, aromatic, and heteroaromatic organic tail groups, changing the structure of R does not significantly influence the rate of tunneling. PMID:22504880

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Methods for the fabrication of thermally stable magnetic tunnel junctions

DOEpatents

Chang, Y Austin [Middleton, WI; Yang, Jianhua J [Madison, WI; Ladwig, Peter F [Hutchinson, MN

2009-08-25

Magnetic tunnel junctions and method for making the magnetic tunnel junctions are provided. The magnetic tunnel junctions are characterized by a tunnel barrier oxide layer sandwiched between two ferromagnetic layers. The methods used to fabricate the magnetic tunnel junctions are capable of completely and selectively oxidizing a tunnel junction precursor material using an oxidizing gas containing a mixture of gases to provide a tunnel junction oxide without oxidizing the adjacent ferromagnetic materials. In some embodiments the gas mixture is a mixture of CO and CO.sub.2 or a mixture of H.sub.2 and H.sub.2O.

Cryogen-free cryostat for large-scale arrays of superconducting tunnel junction ion detectors in time-of-flight mass spectrometry

NASA Astrophysics Data System (ADS)

Kushino, A.; Ohkubo, M.; Chen, Y. E.; Ukibe, M.; Kasai, S.; Fujioka, K.

2006-04-01

Nb-based superconducting tunnel junction (STJ) detectors have a fast time resolution of a few 100 ns and high operating temperature of 0.3 K. These advantages expand their applicable fields to time-of-flight mass spectrometry (TOF-MS). In order to enlarge effective detection area, we have built arrays based on hundreds of large STJ elements. To realize the fast readout and no-cross talk, coaxial cables made of low-thermal conductivity materials were investigated. From results of thermal conduction measurements, we chose thin coaxial cables with a diameter of 0.33 mm, consisting of CuNi center/outer conductors and Teflon insulator for the wiring between 0.3 K- 3He pot of the sorption pump and 3 K-2nd stage of GM cooler. Even after the installation of coaxial cables and a cold snout to the cryogen-free cryostat, we could keep arrays at 0.3 K for about a week, and reduction of the holding time at 0.3 K and temperature rise at 3He pot due to the installation were small, ˜0.5 day and 10 mK, respectively.

Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohsawa, T.; Ikeda, S.; Hanyu, T.

The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMRmore » ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.« less

Micromachined Millimeter- and Submillimeter-Wave SIS Heterodyne Receivers for Remote Sensing

NASA Technical Reports Server (NTRS)

Hu, Qing

1998-01-01

A heterodyne mixer with a micromachined horn antenna and a superconductor -insulator-superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si3N4 dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30+/-3 K without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

High density processing electronics for superconducting tunnel junction x-ray detector arrays

NASA Astrophysics Data System (ADS)

Warburton, W. K.; Harris, J. T.; Friedrich, S.

2015-06-01

Superconducting tunnel junctions (STJs) are excellent soft x-ray (100-2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays - currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I-V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

Model of inter-cell interference phenomenon in 10 nm magnetic tunnel junction with perpendicular anisotropy array due to oscillatory stray field from neighboring cells

NASA Astrophysics Data System (ADS)

Ohuchida, Satoshi; Endoh, Tetsuo

2018-06-01

In this paper, we propose a new model of inter-cell interference phenomenon in a 10 nm magnetic tunnel junction with perpendicular anisotropy (p-MTJ) array and investigated the interference effect between a program cell and unselected cells due to the oscillatory stray field from neighboring cells by Landau–Lifshitz–Gilbert micromagnetic simulation. We found that interference brings about a switching delay in a program cell and excitation of magnetization precession in unselected cells even when no programing current passes through. The origin of interference is ferromagnetic resonance between neighboring cells. During the interference period, the precession frequency of the program cell is 20.8 GHz, which synchronizes with that of the theoretical precession frequency f = γH eff in unselected cells. The disturbance strength of unselected cells decreased to be inversely proportional to the cube of the distance from the program cell, which is in good agreement with the dependence of stray field on the distance from the program cell calculated by the dipole approximation method.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kan, Jimmy J.; Gottwald, Matthias; Fullerton, Eric E.

We describe low-temperature characterization of magnetic tunnel junctions (MTJs) patterned by reactive ion etching for spin-transfer-torque magnetic random access memory. Magnetotransport measurements of typical MTJs show increasing tunneling magnetoresistance (TMR) and larger coercive fields as temperature is decreased down to 10 K. However, MTJs selected from the high-resistance population of an MTJ array exhibit stable intermediate magnetic states when measured at low temperature and show TMR roll-off below 100 K. These non-ideal low-temperature behaviors arise from edge damage during the etch process and can have negative impacts on thermal stability of the MTJs.

All NbN tunnel junction fabrication

NASA Technical Reports Server (NTRS)

Leduc, H. G.; Khanna, S. K.; Stern, J. A.

1987-01-01

The development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

PubMed Central

Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

2015-01-01

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

Fixed-Gap Tunnel Junction for Reading DNA Nucleotides

PubMed Central

2015-01-01

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events. PMID:25380505

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Recent advances in superconducting-mixer simulations

NASA Technical Reports Server (NTRS)

Withington, S.; Kennedy, P. R.

1992-01-01

Over the last few years, considerable progress have been made in the development of techniques for fabricating high-quality superconducting circuits, and this success, together with major advances in the theoretical understanding of quantum detection and mixing at millimeter and submillimeter wavelengths, has made the development of CAD techniques for superconducting nonlinear circuits an important new enterprise. For example, arrays of quasioptical mixers are now being manufactured, where the antennas, matching networks, filters and superconducting tunnel junctions are all fabricated by depositing niobium and a variety of oxides on a single quartz substrate. There are no adjustable tuning elements on these integrated circuits, and therefore, one must be able to predict their electrical behavior precisely. This requirement, together with a general interest in the generic behavior of devices such as direct detectors and harmonic mixers, has lead us to develop a range of CAD tools for simulating the large-signal, small-signal, and noise behavior of superconducting tunnel junction circuits.

Short-Term Plasticity and Long-Term Potentiation in Magnetic Tunnel Junctions: Towards Volatile Synapses

NASA Astrophysics Data System (ADS)

Sengupta, Abhronil; Roy, Kaushik

2016-02-01

Synaptic memory is considered to be the main element responsible for learning and cognition in humans. Although traditionally nonvolatile long-term plasticity changes are implemented in nanoelectronic synapses for neuromorphic applications, recent studies in neuroscience reveal that biological synapses undergo metastable volatile strengthening followed by a long-term strengthening provided that the frequency of the input stimulus is sufficiently high. Such "memory strengthening" and "memory decay" functionalities can potentially lead to adaptive neuromorphic architectures. In this paper, we demonstrate the close resemblance of the magnetization dynamics of a magnetic tunnel junction (MTJ) to short-term plasticity and long-term potentiation observed in biological synapses. We illustrate that, in addition to the magnitude and duration of the input stimulus, the frequency of the stimulus plays a critical role in determining long-term potentiation of the MTJ. Such MTJ synaptic memory arrays can be utilized to create compact, ultrafast, and low-power intelligent neural systems.

Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.;

Submillimeter-wave antennas on thin membranes

NASA Technical Reports Server (NTRS)

Rebeiz, Gabriel M.; Regehr, Wade G.; Rutledge, David B.; Savage, Richard L.; Luhmann, Neville C., Jr.

1987-01-01

Submillimeter-wave antennas have been fabricated on 1-micron thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 370 GHz and 167 GHz show no sidelobes and 3-dB beamwidths between 40 and 60 deg. A linear imaging array has similar patterns at 700 GHz. Possible applications for membrane antennas include wideband superconducting tunnel-junction receivers for radio astronomy and imaging arrays for radiometry and plasma diagnostics.

Electronic thermometry in tunable tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may bemore » measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.« less

Position sensitive detection of nuclear radiation mediated by non equilibrium phonons at low temperatures

NASA Astrophysics Data System (ADS)

Pröbst, F.; Peterreins, Th.; Feilitzsch, F. v.; Kraus, H.

1990-03-01

Many experiments in nuclear and particle physics would benefit from the development of a device capable of detecting non-ionizing events with a low energy threshold. In this context, we report on experimental tests of a detector based on the registration of nonequilibrium phonons. The device is composed of a silicon single crystal (size: 20×10×3 mm 3) and of an array of superconducting tunnel junctions evaporated onto the surface of the crystal. The junctions serve as sensors for phonons created by absorption of nuclear radiation in the crystal. We show how pulse height analysis and the investigation of time differences between correlated pulses in different junctions can be used to obtain information about the point of absorption.

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction.more » The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Tunneling current spectroscopy of a nanostructure junction involving multiple energy levels.

PubMed

Kuo, David M-T; Chang, Yia-Chung

2007-08-24

A multilevel Anderson model is employed to simulate the system of a nanostructure tunnel junction with any number of one-particle energy levels. The tunneling current, including both shell-tunneling and shell-filling cases, is theoretically investigated via the nonequilibrium Green's function method. We obtain a closed form for the spectral function, which is used to analyze the complicated tunneling current spectra of a quantum dot or molecule embedded in a double-barrier junction. We also show that negative differential conductance can be observed in a quantum dot tunnel junction when the Coulomb interactions with neighboring quantum dots are taken into account.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Large resistance change on magnetic tunnel junction based molecular spintronics devices

NASA Astrophysics Data System (ADS)

Tyagi, Pawan; Friebe, Edward

2018-05-01

Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

2016-02-10

We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

NASA Astrophysics Data System (ADS)

Cadieu, F. J.; Chen, Li; Li, Biao

2002-05-01

We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Cheng-Han; Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Band-pass Fabry-Pèrot magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Sharma, Abhishek; Tulapurkar, Ashwin. A.; Muralidharan, Bhaskaran

2018-05-01

We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass Fabry-Pèrot magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (≈5 × 104%) and nearly 1200% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronic device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

NASA Astrophysics Data System (ADS)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

Laser-assisted electron tunneling in a STM junction

NASA Astrophysics Data System (ADS)

Chang, Shunhua Thomas

2000-10-01

Since its introduction in 1981, the Nobel prize-winning scanning tunneling microscope (STM) has been developed into a powerful yet conceptually simple instrument, replacing traditional scanning and transmission electron microscopes (SEM/TEM) in many of the microscopic surface phenomenon studies. The strength of the STM stems from the sensitive tunneling current-potential barrier width relationship of the electron tunneling process, and has been used to re-examine the frequency-mixing and harmonic generation properties of an non-linear metal- oxide-metal (MOM) tunneling junction. In this research, electron-tunneling events under polarized laser radiation at 514.5-nm argon and 10.6-μm carbon dioxide laser wavelengths were investigated. The objective is to understand the underlying interactive mechanisms between the tunneling junction and the external laser excitation. A commercial scanning tunneling microscope head and controller were incorporated into the experimental setup. Operation characteristics and the electrical properties of the STM junction were determined. Tunneling current and distance responses with respect to different laser polarization, modulation frequency, incident power, and tunneling distance were also conducted. From the experimental results it is shown that thermal expansion effect was the dominant source of response for laser modulation frequency up to about 100 kHz, in quantitative agreement with theoretical calculations. Different laser polarizations as the experiments demonstrated did not contribute significantly to the STM response in the investigated frequency range. The electric field induced by the laser beam was calculated to be one to two order of magnitudes lower than the field required to initiate field emission where the tunneling junction I- V curve is most non-linear. Also, the electrical coupling of the incident laser at the STM junction was determined to be non-critical at visible laser wavelength, and the reflected laser energy from the sample re-entering the junction was shown to be weak and did not influence the ongoing electron tunneling process. In conclusion, the thermal expansion of the physical tunneling junction was found to be responsible to the tunneling current modulation in a laser - STM setup for laser modulation frequencies in the lower frequency range.

Large resistance change on magnetic tunnel junction based molecular spintronics devices

DOE PAGES

Tyagi, Pawan; Friebe, Edward

2018-01-12

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies providedmore » insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.« less

Large resistance change on magnetic tunnel junction based molecular spintronics devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tyagi, Pawan; Friebe, Edward

Here, molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies providedmore » insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.« less

Using granular film to suppress charge leakage in a single-electron latch.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orlov, A. O.; Luo, X.; Yadavalli, K. K.

2008-01-01

A single-electron latch is a device that can be used as a building block for quantum-dot cellular automata circuits. It consists of three nanoscale metal 'dots' connected in series by tunnel junctions; charging of the dots is controlled by three electrostatic gates. One very important feature of a single-electron latch is its ability to store ('latch') information represented by the location of a single electron within the three dots. To obtain latching, the undesirable leakage of charge during the retention time must be suppressed. Previously, to achieve this goal, multiple tunnel junctions were used to connect the three dots. However,more » this method of charge leakage suppression requires an additional compensation of the background charges affecting each parasitic dot in the array of junctions. We report a single-electron latch where a granular metal film is used to fabricate the middle dot in the latch which concurrently acts as a charge leakage suppressor. This latch has no parasitic dots, therefore the background charge compensation procedure is greatly simplified. We discuss the origins of charge leakage suppression and possible applications of granular metal dots for various single-electron circuits.« less

Electrical properties of graphene tunnel junctions with high-κ metal-oxide barriers

NASA Astrophysics Data System (ADS)

Feng, Ying; Trainer, Daniel J.; Chen, Ke

2017-04-01

An insulating barrier is one of the key components in electronic devices that makes use of quantum tunneling principles. Many metal-oxides have been used as a good barrier material in a tunnel junction for their large band gap, stable chemical properties and superb properties for forming a thin and pin-hole-free insulating layer. The reduced dimensions of transistors have led to the need for alternative, high dielectric constant (high-κ) oxides to replace conventional silicon-based dielectrics to reduce the leaking current induced by electron tunneling. On the other hand, a tunnel junction with one or both electrodes made of graphene may lead to novel applications due to the massless Dirac fermions from the graphene. Here we have fabricated sandwich-type graphene tunnel junctions with high-κ metal-oxides as barriers, including Al2O3, HfO2, ZrO2, and TiO2. Tunneling properties are investigated by observing the temperature and time dependences of the tunneling spectra. Our results show the potential for applications of high-κ oxides in graphene tunnel junctions and bringing new opportunities for memory and logic electronic devices.

Josephson junction Q-spoiler

DOEpatents

Clarke, J.; Hilbert, C.; Hahn, E.L.; Sleator, T.

1986-03-25

An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

Josephson junction Q-spoiler

DOEpatents

Clarke, John; Hilbert, Claude; Hahn, Erwin L.; Sleator, Tycho

1988-01-01

An automatic Q-spoiler comprising at least one Josephson tunnel junction connected in an LC circuit for flow of resonant current therethrough. When in use in a system for detecting the magnetic resonance of a gyromagnetic particle system, a high energy pulse of high frequency energy irradiating the particle system will cause the critical current through the Josephson tunnel junctions to be exceeded, causing the tunnel junctions to act as resistors and thereby damp the ringing of the high-Q detection circuit after the pulse. When the current has damped to below the critical current, the Josephson tunnel junctions revert to their zero-resistance state, restoring the Q of the detection circuit and enabling the low energy magnetic resonance signals to be detected.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions.

PubMed

Miao, G X; Park, Y J; Moodera, J S; Seibt, M; Eilers, G; Münzenberg, M

2008-06-20

Oxygen vacancies in the MgO barriers of epitaxial Fe/MgO/Fe magnetic tunnel junctions are observed to introduce symmetry-breaking scatterings and hence open up channels for noncoherent tunneling processes that follow the normal WKB approximation. The evanescent waves inside the MgO barrier thus experience two-step tunneling, the coherent followed by the noncoherent process, and lead to lower tunnel magnetoresistance, higher junction resistance, as well as increased bias and temperature dependence. The characteristic length of the symmetry scattering process is determined to be about 1.6 nm.

Strong Electron Self-Cooling in the Cold-Electron Bolometers Designed for CMB Measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.; Pankratov, A. L.; Gordeeva, A. V.; Zbrozhek, V. O.; Revin, L. S.; Shamporov, V. A.; Masi, S.; de Bernardis, P.

2018-03-01

We have realized cold-electron bolometers (CEB) with direct electron self-cooling of the nanoabsorber by SIN (Superconductor-Insulator-Normal metal) tunnel junctions. This electron self-cooling acts as a strong negative electrothermal feedback, improving noise and dynamic properties. Due to this cooling the photon-noise-limited operation of CEBs was realized in array of bolometers developed for the 345 GHz channel of the OLIMPO Balloon Telescope in the power range from 10 pW to 20 pW at phonon temperature Tph =310 mK. The negative electrothermal feedback in CEB is analogous to TES but instead of artificial heating we use cooling of the absorber. The high efficiency of the electron self-cooling to Te =100 mK without power load and to Te=160 mK under power load is achieved by: - a very small volume of the nanoabsorber (0.02 μm3) and a large area of the SIN tunnel junctions, - effective removal of hot quasiparticles by arranging double stock at both sides of the junctions and close position of the normal metal traps, - self-protection of the 2D array of CEBs against interferences by dividing them between N series CEBs (for voltage interferences) and M parallel CEBs (for current interferences), - suppression of Andreev reflection by a thin layer of Fe in the AlFe absorber. As a result even under high power load the CEBs are working at electron temperature Te less than Tph . To our knowledge, there is no analogue in the bolometers technology in the world for bolometers working at electron temperature colder than phonon temperature.

Analysis of astronomical data from optical superconducting tunnel junctions

NASA Astrophysics Data System (ADS)

de Bruijne, J. H.; Reynolds, A. P.; Perryman, Michael A.; Favata, Fabio; Peacock, Anthony J.

2002-06-01

Currently operating optical superconducting tunnel junction (STJ) detectors, developed at the European Space Agency (ESA), can simultaneously measure the wavelength ((Delta) (gamma) equals 50 nm at 500 nm) and arrival time (to within approximately 5 microsecond(s) ) of individual photons in the range 310 to 720 nm with an efficiency of approximately 70%, and with count rates of the order of 5000 photons s-1 per junction. A number of STJs placed in an array format generates 4-D data: photon arrival time, energy, and array element (X,Y). Such STJ cameras are ideally suited for, e.g., high-time-resolution spectrally resolved monitoring of variable sources or low- resolution spectroscopy of faint extragalactic objects. The reduction of STJ data involves detector efficiency correction, atmospheric extinction correction, sky background subtraction, and, unlike that of data from CCD-based systems, a more complex energy calibration, barycentric arrival time correction, energy range selection, and time binning; these steps are, in many respects, analogous to procedures followed in high-energy astrophysics. We discuss these calibration steps in detail using a representative observation of the cataclysmic variable UZ Fornacis; these data were obtained with ESA's S-Cam2 6 X 6-pixel device. We furthermore discuss issues related to telescope pointing and guiding, differential atmospheric refraction, and atmosphere-induced image motion and image smearing (`seeing') in the focal plane. We also present a simple and effective recipe for extracting the evolution of atmospheric seeing with time from any science exposure and discuss a number of caveats in the interpretation of STJ-based time-binned data, such as light curves and hardness ratio plots.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, M. P.; US Naval Research Laboratory, Washington, DC 20375; Yakes, M. K.

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interfacemore » is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.« less

Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Crook, Adam M.; Bank, Seth R.

2010-05-01

We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10-4 Ω cm-2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.

Planar-type ferromagnetic tunnel junctions fabricated by SPM local oxidation

NASA Astrophysics Data System (ADS)

Tomoda, Y.; Kayashima, S.; Ogino, T.; Motoyama, M.; Takemura, Y.; Shirakashi, J.

Nanometer-scale oxide wires were fabricated by local oxidation nanolithography using scanning probe microscope (SPM). This technique was applied to the fabrication of planar-type Ni/Ni oxide/Ni ferromagnetic tunnel junctions. In order to induce magnetic shape anisotropy, asymmetrical channel structure was patterned by conventional photolithography and wet etching processes. The magnetoresistance (MR) characteristics were clearly shown in the planar-type Ni/Ni oxide/Ni ferromagnetic tunnel junctions. MR ratio of above 100% was obtained at 17 K. This result suggests that the local oxidation nanolithography using SPM is useful for the application to planar-type ferromagnetic tunnel junctions.

Superpoissonian shot noise in organic magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cascales, Juan Pedro; Martinez, Isidoro; Aliev, Farkhad G., E-mail: farkhad.aliev@uam.es

Organic molecules have recently revolutionized ways to create new spintronic devices. Despite intense studies, the statistics of tunneling electrons through organic barriers remains unclear. Here, we investigate conductance and shot noise in magnetic tunnel junctions with 3,4,9,10-perylene-teracarboxylic dianhydride (PTCDA) barriers a few nm thick. For junctions in the electron tunneling regime, with magnetoresistance ratios between 10% and 40%, we observe superpoissonian shot noise. The Fano factor exceeds in 1.5–2 times the maximum values reported for magnetic tunnel junctions with inorganic barriers, indicating spin dependent bunching in tunneling. We explain our main findings in terms of a model which includes tunnelingmore » through a two level (or multilevel) system, originated from interfacial bonds of the PTCDA molecules. Our results suggest that interfaces play an important role in the control of shot noise when electrons tunnel through organic barriers.« less

First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

NASA Astrophysics Data System (ADS)

Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

2018-06-01

Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

PubMed Central

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-01-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories. PMID:28513590

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Ruan, Jieji; Li, Chen; Zheng, Chunyan; Wen, Zheng; Dai, Jiyan; Li, Aidong; Wu, Di

2017-05-01

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope

PubMed Central

Nazin, G. V.; Wu, S. W.; Ho, W.

2005-01-01

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends. PMID:15956189

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

PubMed

Nazin, G V; Wu, S W; Ho, W

2005-06-21

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

Atomically Thin Al2O3 Films for Tunnel Junctions

NASA Astrophysics Data System (ADS)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1992-01-01

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Fabrication and characterization of high current-density, submicron, NbN/MgO/NbN tunnel junctions

NASA Technical Reports Server (NTRS)

Stern, J. A.; Leduc, Henry G.; Judas, A. J.

1992-01-01

At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certain device properties should be scaled. The tunnel-junction's current density should be increased to reduce the RC product. The device's area should be reduced to efficiently couple power from the antenna to the mixer. Finally, the superconductor used should have a large energy gap to minimize RF losses. Most SIS mixers use Nb or Pb-alloy tunnel junctions; the gap frequency for these materials is approximately 725 GHz. Above the gap frequency, these materials exhibit losses similar to those in a normal metal. The gap frequency in NbN films is as-large-as 1440 GHz. Therefore, we have developed a process to fabricate small area (down to 0.13 sq microns), high current density, NbN/MgO/NbN tunnel junctions.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.

The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layersmore » of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.« less

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, J.M.; Kurtz, S.R.

1992-11-24

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Compositional grading of InxGa1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles

NASA Astrophysics Data System (ADS)

Salas, R.; Krivoy, E. M.; Crook, A. M.; Nair, H. P.; Bank, S. R.

2011-10-01

We investigate the electrical conductivity of GaAs-based tunnel junctions enhanced with semimetallic ErAs nanoparticles. In particular, we examine the effects of digitally-graded InGaAs alloys on the n-type side of the tunnel junction, along with different p-type doping levels. Device characteristics of the graded structures indicate that the n-type Schottky barrier may not be the limiting factor in the tunneling current as initially hypothesized. Moreover, significantly improved forward and reverse bias tunneling currents were observed with increased p-type doping, suggesting p-side limitation.

IR detection and energy harvesting using antenna coupled MIM tunnel diodes

NASA Astrophysics Data System (ADS)

Yesilkoy, Filiz

The infrared (IR) spectrum lies between the microwave and optical frequency ranges, which are well suited for communication and energy harvesting purposes, respectively. The long wavelength IR (LWIR) spectrum, corresponding to wavelengths from 8microm to 15microm, includes the thermal radiation emitted by objects at room temperature and the Earth's terrestrial radiation. Therefore, LWIR detectors are very appealing for thermal imaging purposes. Thermal detectors developed so far either demand cryogenic operation for fast detection, or they rely on the accumulation of thermal energy in their mass and subsequent measurable changes in material properties. Therefore, they are relatively slow. Quantum detectors allow for tunable and instantaneous detection but are expensive and require complex processes for fabrication. Bolometer detectors are simple and cheap but do not allow for tunability or for rapid detection. Harvesting the LWIR radiation energy sourced by the Earth's heating/cooling cycle is very important for the development of mobile energy resources. While speed is not as significant an issue here, conversion efficiency is an eminent problem for cheap, large area energy transduction. This dissertation addresses the development of tunable, fast, and low cost wave detectors that can operate at room temperature and, when produced in large array format, can harvest Earth's terrestrial radiation energy. This dissertation demonstrates the design, fabrication and testing of Antenna Coupled Metal-Insulator-Metal (ACMIM) tunnel diodes optimized for 10microm wavelength radiation detection. ACMIM tunnel diodes operate as electromagnetic wave detectors: the incident radiation is coupled by an antenna and converted into a 30 terahertz signal that is rectified by a fast tunneling MIM diode. For efficient IR radiation coupling, the antenna geometry and its critical dimensions are studied using a commercial finite-element based multi-physics simulation tool, and the half-wave dipole-like bow-tie antennas are fabricated using simulation-optimized geometries. The major challenge of this work is designing and fabricating MIM diodes and coupled antennas with internal capacitances and resistances small enough to allow response in the desired frequency range (˜30 THz) and yet capable of efficiently coupling to the incident radiation. It is crucial to keep the RC time constant of the tunnel junction small to achieve the requisite cut-off frequency and adequate rectification efficiency. Moreover, a low junction resistance is necessary to load the coupled AC power across the MIM junction. For energy harvesting applications, the device has to operate without an external bias, which requires asymmetry at the zero bias operation point. To address these requirements, the MIM tunnel junction is established so that one electrode has a field enhancing sharp tip (cathode) and the other is a rectangular patch. This asymmetric geometry not only offers asymmetric current-voltage behavior at the zero bias point, but also it decouples the junction resistance and capacitance by concentrating the charge transport in a small volume around the tip. Various fabrication methods are developed in order to create small junction area (= low parasitic capacitance), low junction resistance (= effective power coupling through antenna), asymmetry (= zero bias operation), high fabrication yield and low cost ACMIM tunnel diodes. High resolution fabrication needs are accomplished by electron beam lithography and nano-accuracy in the junction area is achieved by employing dose modifying proximity effect correction and critical alignment methods. Our Ni/NiOx/Ni ACMIM diodes with an optimized insulation layer created with O2 plasma oxidation are the most successful devices presented to date. A novel fabrication technique called "strain assisted self lift-off process" is used to achieve small junction area devices without relying on lithographic resolution. This technique eliminates the rival parasitic capacitance issue of today's ACMIM tunnel diodes and does not rely on extreme-high resolution lithography technologies.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Ac electronic tunneling at optical frequencies

NASA Technical Reports Server (NTRS)

Faris, S. M.; Fan, B.; Gustafson, T. K.

1974-01-01

Rectification characteristics of non-superconducting metal-barrier-metal junctions deduced from electronic tunneling have been observed experimentally for optical frequency irradiation of the junction. The results provide verification of optical frequency Fermi level modulation and electronic tunneling current modulation.

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, John F.; Zolper, John C.

1997-01-01

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Hybrid tunnel junction contacts to III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-02-01

In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

PubMed Central

Garrigues, Alvar R.; Yuan, Li; Wang, Lejia; Mucciolo, Eduardo R.; Thompon, Damien; del Barco, Enrique; Nijhuis, Christian A.

2016-01-01

We present a theoretical analysis aimed at understanding electrical conduction in molecular tunnel junctions. We focus on discussing the validity of coherent versus incoherent theoretical formulations for single-level tunneling to explain experimental results obtained under a wide range of experimental conditions, including measurements in individual molecules connecting the leads of electromigrated single-electron transistors and junctions of self-assembled monolayers (SAM) of molecules sandwiched between two macroscopic contacts. We show that the restriction of transport through a single level in solid state junctions (no solvent) makes coherent and incoherent tunneling formalisms indistinguishable when only one level participates in transport. Similar to Marcus relaxation processes in wet electrochemistry, the thermal broadening of the Fermi distribution describing the electronic occupation energies in the electrodes accounts for the exponential dependence of the tunneling current on temperature. We demonstrate that a single-level tunnel model satisfactorily explains experimental results obtained in three different molecular junctions (both single-molecule and SAM-based) formed by ferrocene-based molecules. Among other things, we use the model to map the electrostatic potential profile in EGaIn-based SAM junctions in which the ferrocene unit is placed at different positions within the molecule, and we find that electrical screening gives rise to a strongly non-linear profile across the junction. PMID:27216489

Spin-transfer torque in spin filter tunnel junctions

NASA Astrophysics Data System (ADS)

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-12-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-dependent transport in antiferromagnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Merodio, P.; Kalitsov, A.; Béa, H.; Baltz, V.; Chshiev, M.

2014-09-01

We investigate the behaviour of spin transfer torque (STT) and tunnelling magnetoresistance (TMR) in epitaxial antiferromagnetic-based tunnel junctions using tight binding calculations in the framework of the Keldysh formalism. We find that the STT out-of-plane component exhibits a staggered spatial distribution similar to its in-plane component. This behaviour is specific to the use of a tunnel barrier and significantly differs from the out-of-plane torques reported in previous works using a metallic spacer. Additionally, we show that unlike conventional ferromagnetic-based tunnel junctions, the TMR can increase with applied bias and reach values comparable to typical magnetoresistances found for usual spin valves.

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

1992-01-01

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Sub micron area Nb/AlO(x)/Nb tunnel junctions for submillimeter mixer applications

NASA Technical Reports Server (NTRS)

Leduc, Henry G.; Bumble, B.; Cypher, S. R.; Judas, A. J.; Stern, J. A.

1992-01-01

In this paper, we report on a fabrication process developed for submicron area tunnel junctions. We have fabricated Nb/AlO(x)/Nb tunnel junctions with areas down to 0.1 sq micron using these techniques. The devices have shown excellent performance in receiver systems up to 500 GHz and are currently in use in radio astronomy observatories at 115, 230, and 500 GHz.

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, J.F.; Zolper, J.C.

1997-10-21

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

Electronic tunneling currents at optical frequencies

NASA Technical Reports Server (NTRS)

Faris, S. M.; Fan, B.; Gustafson, T. K.

1975-01-01

Rectification characteristics of nonsuperconducting metal-barrier-metal junctions as deduced from electronic tunneling theory have been observed experimentally for optical frequency irradiation of the junction.

Humidity dependence of molecular tunnel junctions with an AlOx/COOH- interface

NASA Astrophysics Data System (ADS)

Zhang, Xiaohang; McGill, Stephen; Xiong, Peng

2006-03-01

We have studied the electron transport in planar tunneling junctions with aluminum oxide and an organic self-assembled monolayer (SAM) as the tunnel barrier. The structure of the junctions is Al/AlOx/SAM/(Au, Pb) with a junction area of ˜ 0.4mm^2. The organic molecules investigated include mercaptohexadecanoic acid (MHA), hexadecanoic acid (HDA), and octadecyltrichlorosilane (OTS); all of which form ordered SAMs on top of aluminum oxide. The use of a superconducting electrode (Al) enables us to determine unambiguously that these are high-quality tunnel junctions. For junctions incorporating MHA, the transport behavior is found to be strongly humidity dependent. The resistance of these junctions drops more than 50% when placed in dry nitrogen and recovers when returned into the ambient. The same drop also occurs when the sample is placed into a vacuum, and backfilling the vacuum with either dry N2 or O2 has negligible effect on the resistance. For comparison, junctions with HDA show the same humidity dependence, while OTS samples do not. Since both MHA and HDA have carboxylic groups and OTS does not, the results suggest that water molecules at the AlOx/COOH- interface play the central role in the observed behavior. Inelastic tunneling spectroscopy (IETS) has also been performed to understand the role of water. This work was supported by a FSU Research Foundation PEG grant.

Quantum shot noise in tunnel junctions

NASA Technical Reports Server (NTRS)

Ben-Jacob, E.; Mottola, E.; Schoen, G.

1983-01-01

The current and voltage fluctuations in a normal tunnel junction are calculated from microscopic theory. The power spectrum can deviate from the familiar Johnson-Nyquist form when the self-capacitance of the junction is small, at low temperatures permitting experimental verification. The deviation reflects the discrete nature of the charge transfer across the junction and should be present in a wide class of similar systems.

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

Nanotunneling Junction-based Hyperspectal Polarimetric Photodetector and Detection Method

NASA Technical Reports Server (NTRS)

Son, Kyung-ah (Inventor); Moon, Jeongsun J. (Inventor); Chattopadhyay, Goutam (Inventor); Liao, Anna (Inventor); Ting, David (Inventor)

2009-01-01

A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

Bloch oscillating transistor as the readout element for hot electron bolometers

NASA Astrophysics Data System (ADS)

Hassel, Juha; Seppä, Heikki; Lindell, Rene; Hakonen, Pertti

2004-10-01

In this paper we analyse the properties of the Bloch oscillating transistor as a preamplifier in cryogenic devices. We consider here especially the readout of hot electron bolometers (HEBs) based on Normal-Superconductor-Insulator tunnel junctions, but the results also apply more generally. We show that one can get an equivalent noise voltage below 1 nV/√Hz with a single BOT. By using N BOTs in a parallel array configuration, a further reduction by factor √N may be achieved.

New Content Addressable Memory (CAM) Technologies for Big Data and Intelligent Electronics Enabled by Magneto-Electric Ternary CAM

DTIC Science & Technology

2017-12-11

provides ultra-low energy search operations. To improve throughput, the in-array pipeline scheme has been developed, allowing the MeTCAM to operate at a...controlled magnetic tunnel junction (VC-MTJ), which not only reduces cell area (thus achieving higher density) but also eliminates standby energy . This...Variations of the cell design are presented and evaluated. The results indicated a potential 90x improvement in the energy efficiency and a 50x

Flip Chip Bonding of 68 x 68 MWIR LED Arrays

DTIC Science & Technology

2009-01-01

transmission of IR light through GaSb material varies between 5%–30% and depends on the type of substrate dopants (n- or p-type). Hence, for bottom...emission regions (8.9/16 monolayer’s (ml) InAs/GaSb) separated by (n InAs/GaSb super lattice grade)/(p+ GaSb) tunnel junctions. Graded super lattices were...flip chip bonding process. Besides four corner LED test pads, there are 296 bonding pads in the CMOS driver to bias each LED pixel independently. The

Real Time Imaging Analysis Using a Terahertz Quantum Cascade Laser and a Microbolometer Focal Plane Array

DTIC Science & Technology

2008-12-01

evident from Figure 7 that, if the applied bias is not correct, it is very likely that electrons will not tunnel into their intended energy state...the theoretical laser contrasts sharply to that of semiconductor lasers. Semiconductor lasers rely on electron hole recombination or interband ...the active layer of a forward- biased pn junction [26]. In contrast to this, the QCL is a unipolar device that uses a quantum well (QW) structure

Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.

PubMed

Bellunato, Amedeo; Vrbica, Sasha D; Sabater, Carlos; de Vos, Erik W; Fermin, Remko; Kanneworff, Kirsten N; Galli, Federica; van Ruitenbeek, Jan M; Schneider, Grégory F

2018-04-11

The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

NASA Astrophysics Data System (ADS)

Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges

PubMed Central

2018-01-01

The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene. PMID:29513997

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions.

PubMed

Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

2015-11-11

We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel current around zero bias and step-like features in the current at larger biases. The voltage separation of these steps suggests that single-electron charging of nanometer-scale defects in the hBN barrier layer are responsible for these signatures. We find that annealing the metal-hBN-metal junctions removes these defects and the Coulomb blockade signatures in the tunneling current.

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

PubMed

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Variability metrics in Josephson Junction fabrication for Quantum Computing circuits

NASA Astrophysics Data System (ADS)

Rosenblatt, Sami; Hertzberg, Jared; Brink, Markus; Chow, Jerry; Gambetta, Jay; Leng, Zhaoqi; Houck, Andrew; Nelson, J. J.; Plourde, Britton; Wu, Xian; Lake, Russell; Shainline, Jeff; Pappas, David; Patel, Umeshkumar; McDermott, Robert

Multi-qubit gates depend on the relative frequencies of the qubits. To reliably build multi-qubit devices therefore requires careful fabrication of Josephson junctions in order to precisely set their critical currents. The Ambegaokar-Baratoff relation between tunnel conductance and critical current implies a correlation between qubit frequency spread and tunnel junction resistance spread. Here we discuss measurement of large numbers of tunnel junctions to assess these resistance spreads, which can exceed 5% of mean resistance. With the goal of minimizing these spreads, we investigate process parameters such as lithographic junction area, evaporation and masking scheme, oxidation conditions, and substrate choice, as well as test environment, design and setup. In addition, trends of junction resistance with temperature are compared with theoretical models for further insights into process and test variability.

Tunneling-Electron-Induced Light Emission from Single Gold Nanoclusters.

PubMed

Yu, Arthur; Li, Shaowei; Czap, Gregory; Ho, W

2016-09-14

The coupling of tunneling electrons with the tip-nanocluster-substrate junction plasmon was investigated by monitoring light emission in a scanning tunneling microscope (STM). Gold atoms were evaporated onto the ∼5 Å thick Al2O3 thin film grown on the NiAl (110) surface where they formed nanoclusters 3-7 nm wide. Scanning tunneling spectroscopy (STS) of these nanoclusters revealed quantum-confined electronic states. Spatially resolved photon imaging showed localized emission hot spots. Size dependent study and light emission from nanocluster dimers further support the viewpoint that coupling of tunneling electrons to the junction plasmon is the main radiative mechanism. These results showed the potential of the STM to reveal the electronic and optical properties of nanoscale metallic systems in the confined geometry of the tunnel junction.

Single-contact tunneling thermometry

DOEpatents

Maksymovych, Petro

2016-02-23

A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, P.; Yu, G. Q.; Wei, H. X.

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E {sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process,more » opening an additional conductance channel and thus enhancing the total conductance.« less

In situ manufacture of magnetic tunnel junctions by a direct-write process

NASA Astrophysics Data System (ADS)

Costanzi, Barry N.; Riazanova, Anastasia V.; Dan Dahlberg, E.; Belova, Lyubov M.

2014-06-01

In situ construction of Co/SiO2/Co magnetic tunnel junctions using direct-write electron-beam-induced deposition is described. Proof-of-concept devices were built layer by layer depositing the specific components one at a time, allowing device manufacture using a strictly additive process. The devices exhibit a magnetic tunneling signature which agrees qualitatively with the Slonczewski model of magnetic tunneling.

Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

DTIC Science & Technology

2016-03-30

have recently implemented Josephson junction superconducting devices into qubits [1-6]. Before a multi -qubit quantum computer is realized, however...Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier* S Oh1,2, K Cicak1, R McDermott3, K B Cooper3, K D Osborn1, R W...growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are

Bloch oscillating transistor-a new mesoscopic amplifier

NASA Astrophysics Data System (ADS)

Delahaye, J.; Hassel, J.; Lindell, R.; Sillanpää, M.; Paalanen, M.; Seppä, H.; Hakonen, P.

2003-05-01

Bloch oscillating transistor (BOT) is a novel, three-terminal Josephson junction device. Its operating principle utilizes the fact that Zener tunneling up to a higher band will lead to a blockade of coherent Cooper-pair tunneling, Bloch oscillation, in a suitably biased Josephson junction. The Bloch oscillation is resumed only after the junction has relaxed to the lowest band by quasiparticle tunneling. In this paper we present a simple model for the operation of the BOT and calculate its gain in terms of the interband transition rates.

A novel reduced symmetry oxide (Mg3B2O6) for magnetic tunnel junctions based on FeCo or Fe leads

NASA Astrophysics Data System (ADS)

Stewart, Derek

2010-03-01

Magnetic tunnel junctions with high TMR values, such as FeMgOFe, capitalize on spin filtering in the oxide due to the band symmetry of incident electrons. However, these structures rely on magnetic leads and oxide regions of the same cubic symmetry class. This raises the question of whether reducing the oxide symmetry can enhance spin filtering. A new magnetic tunnel junction (FeCoMg3B2O6FeCo) is presented that uses a reduced symmetry oxide region (orthorhombic) to filter spins between two cubic magnetic leads. Symmetry analysis of coupling between states in the cubic leads and the orthorhombic oxide indicates that majority carrier tunneling through the oxide should be favored over minority carriers. Complex band structure analysis of Mg3B2O6 shows that the relevant evanescent states in the band gap are due to boron p states and that there is sufficient difference in the decay rates of the imaginary bands for spin filtering to occur. Electronic transport calculations through a FeMg3B2O6Fe magnetic tunnel junction are also performed to address the possible influence of interface states. Some recent experimental studies of FeCoBMgOFeCoB junctions, with B diffusion into the MgO region, indicate that this new type of junction may have already been fabricated. The prospect of developing a general class of magnetic tunnel junctions based on reduced symmetry oxides is also examined.

Low frequency critical current noise and two level system defects in Josephson junctions

NASA Astrophysics Data System (ADS)

Nugroho, Christopher Daniel

The critical current in a Josephson junction is known to exhibit a 1/falpha low frequency noise. Implemented as a superconducting qubit, this low frequency noise can lead to decoherence. While the 1/f noise has been known to arise from an ensemble of two level systems connected to the tunnel barrier, the precise microscopic nature of these TLSs remain a mystery. In this thesis we will present measurements of the 1/f alpha low frequency noise in the critical current and tunneling resistance of Al-AlOx-Al Josephson junctions. Measurements in a wide range of resistively shunted and unshunted junctions confirm the equality of critical current and tunneling resistance noise. That is the critical current fluctuation corresponds to fluctuations of the tunneling resistance. In not too small Al-AlOx-Al junctions we have found that the fractional power spectral density scales linearly with temperature. We confirmed that the 1/falpha power spectrum is the result of a large number of two level systems modulating the tunneling resistance. At small junction areas and low temperatures, the number of thermally active TLSs is insufficient to integrate out a featureless 1/ f spectral shape. By analyzing the spectral variance in small junction areas, we have been able to deduce the TLS defect density, n ≈ 2.53 per micrometer squared per Kelvin spread in the TLS energy per factor e in the TLS lifetimes. This density is consistent with the density of tunneling TLSs found in glassy insulators, as well as the density deduced from coherent TLSs interacting at qubit frequencies. The deduced TLS density combined with the magnitude of the 1/f power spectral density in large area junctions, gives an average TLS effective area, A ˜ 0.3 nanometer squared. In ultra small tunnel junctions, we have studied the time-domain dynamics of isolated TLSs. We have found a TLS whose dynamics is described by the quantum tunneling between the two localized wells, and a one-phonon absorption/emission switching rate. From the quantum limiting rate and the WKB approximation, we estimated that the TLS has a mass and tunneling distance product consistent with an atomic mass tunneling through crystal lattice distances. At higher temperatures TLSs have been found that obey a simple thermal activation dynamics. By analyzing the TLS response to an external electric field, we have deduced that the TLS electric dipole is in the order of, P ˜ 1 electron-Angstrom, consistent with the TLS having the charge of one electron tunneling through a disorder potential of distances, d ˜ 1 Angstrom.

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

PubMed

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Insulator charging limits direct current across tunneling metal-insulator-semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vilan, Ayelet

Molecular electronics studies how the molecular nature affects the probability of charge carriers to tunnel through the molecules. Nevertheless, transport is also critically affected by the contacts to the molecules, an aspect that is often overlooked. Specifically, the limited ability of non-metallic contacts to maintain the required charge balance across the fairly insulating molecule often have dramatic effects. This paper shows that in the case of lead/organic monolayer-silicon junctions, a charge balance is responsible for an unusual current scaling, with the junction diameter (perimeter), rather than its area. This is attributed to the balance between the 2D charging at themore » metal/insulator interface and the 3D charging of the semiconductor space-charge region. A derivative method is developed to quantify transport across tunneling metal-insulator-semiconductor junctions; this enables separating the tunneling barrier from the space-charge barrier for a given current-voltage curve, without complementary measurements. The paper provides practical tools to analyze specific molecular junctions compatible with existing silicon technology, and demonstrates the importance of contacts' physics in modeling charge transport across molecular junctions.« less

InP tunnel junctions for InP/InGaAs tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

1995-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes

PubMed Central

2014-01-01

We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances. PMID:24988469

Molecular series-tunneling junctions.

PubMed

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Magnetization reversal mechanism of magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Liu, Cun-Ye; Li, Jian; Wang, Yue; Chen, Jian-Yong; Xu, Qing-Yu; Ni, Gang; Sang, Hai; Du, You-Wei

2002-01-01

Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

DOE PAGES

Althammer, Matthias; Bavarian Academy of Sciences and Humanities; Vikam Singh, Amit; ...

2016-12-16

In this paper, we experimentally investigate the structural, magnetic, and electrical transport properties of La 0.67 Sr 0.33MnO 3 based magnetic tunnel junctions with a SrSnO 3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier, due to the large lattice mismatch, the observed tunnel magnetoresistance (TMR) is comparable to tunnel junctions with a better lattice matched SrTiO 3 barrier, reaching values of up to 350% at T = 5K. Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease ofmore » the TMR with increasing bias voltage. In addition, the observed TMR vanishes for T > 200K. Finally, our results suggest that by employing a better lattice matched ferromagnetic electrode, and thus reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future.« less

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

NASA Astrophysics Data System (ADS)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

2017-07-01

We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

Charge Transport in 2D DNA Tunnel Junction Diodes.

PubMed

Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D; Park, Sung Ha; Im, Seongil

2017-12-01

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiO x junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiO x ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Predicition and Discovery of High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Crystalline Barriers

NASA Astrophysics Data System (ADS)

Butler, William

2005-03-01

Tunneling magnetoresistance in excess of 200% has recently been observed in magnetic tunnel junctions using bcc Fe or bcc CoFe electrodes with crystalline MgO tunnel barriers[1,2]. These results demonstrate that tunneling magnetoresistance depends on more than the ``electrode polarization''. This talk will describe the calculations that predicted high TMR in these and other systems[3,4,5]. These calculations helped us to understand certain principles that may lead to high TMR through coherent electron tunneling. They can be briefly summarized as follows: (1) If the symmetry of a Bloch state can be preserved as electrons cross the interfaces between the electrode and the tunnel barrier, this be used to advantage for spin filtering. (2) Evanescent states of different symmetries decay at different rates in the barrier. (3) Interfacial bonding can be very important in determining the probability that an electron can traverse the interface. (4) Electrons of disallowed symmetry cannot propagate in an electrode. Once these simple principles are understood, simple band codes can be used to screen and to develop heterostructures with the proper symmetries to obtain high TMR. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant AND S.-H. Yang, ``Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers,'' Nature Materials, Advance Online Publication [2] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, ``Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,'' Nature Materials, Advance Online Publication [3] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, ``Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches'' Phys. Rev. B 63, 054416 (2001) [4] J. Mathon, A. Umerski, ``Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,'' Phys. Rev. B 63, 220403(R) (2001). [5] X.-G. Zhang, and W. H. Butler, ``Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunnel junctions,'' Phys. Rev. B 70, 172407 (2004)

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Photoinduced currents in metal-barrier-metal junctions

NASA Technical Reports Server (NTRS)

Guedes, M. P.; Gustafson, T. K.; Heiblum, M.; Siu, D. P.; Slayman, C. W.; Whinnery, J. R.; Yasuoka, Y.

1978-01-01

The fabrication and application of metal-barrier-metal tunneling junctions for radiative interactions are discussed. Particular attention is given to the photolithographic fabrication of small area devices and the coupling to such devices via surface plasmon waves which play an important role at infrared and optical frequencies. It has been shown that the junction electron tunneling currents can be strongly coupled to surface plasmon junction modes, and spontaneous and stimulated emission of the latter are possible as well as nonlinear interactions. Finally, results demonstrating the photo-excitation of electrons with subsequent tunneling induced by ultraviolet radiation are presented. It is estimated that quantum efficiencies of the order of 5% and higher are possible in the ultraviolet region.

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Jian-Qing, E-mail: djqkust@sina.com

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing tomore » the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.« less

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Quantum-limited detection of millimeter waves using superconducting tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mears, Carl Atherton

1991-09-01

The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit bymore » studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 ± 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker`s theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.« less

Quantum-limited detection of millimeter waves using superconducting tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mears, C.A.

1991-09-01

The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit bymore » studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.« less

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

PubMed

Zhang, Peng

2015-05-19

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions

PubMed Central

Zhang, Peng

2015-01-01

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons’ formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics. PMID:25988951

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

NASA Astrophysics Data System (ADS)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

NASA Astrophysics Data System (ADS)

Chu, In Chang; Song, Min Sung; Chun, Byong Sun; Lee, Seong Rae; Kim, Young Keun

2005-08-01

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlO x)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Lee, Hochul; Ebrahimi, Farbod; Amiri, Pedram Khalili; Wang, Kang L.

2017-05-01

A true random number generator based on perpendicularly magnetized voltage-controlled magnetic tunnel junction devices (MRNG) is presented. Unlike MTJs used in memory applications where a stable bit is needed to store information, in this work, the MTJ is intentionally designed with small perpendicular magnetic anisotropy (PMA). This allows one to take advantage of the thermally activated fluctuations of its free layer as a stochastic noise source. Furthermore, we take advantage of the voltage dependence of anisotropy to temporarily change the MTJ state into an unstable state when a voltage is applied. Since the MTJ has two energetically stable states, the final state is randomly chosen by thermal fluctuation. The voltage controlled magnetic anisotropy (VCMA) effect is used to generate the metastable state of the MTJ by lowering its energy barrier. The proposed MRNG achieves a high throughput (32 Gbps) by implementing a 64 ×64 MTJ array into CMOS circuits and executing operations in a parallel manner. Furthermore, the circuit consumes very low energy to generate a random bit (31.5 fJ/bit) due to the high energy efficiency of the voltage-controlled MTJ switching.

Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

PubMed

Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

2018-01-01

We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

NASA Astrophysics Data System (ADS)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

NbN/MgO/NbN edge-geometry tunnel junctions

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Leduc, H. G.; Cypher, S. R.; Stern, J. A.; Judas, A.

1989-01-01

The fabrication and low-frequency testing of the first edge-geometry NbN/MgO/NbN superconducting tunnel junctions are reported. The use of an edge geometry allows very small junction areas to be obtained, while the all-NbN electrodes permit operation at 8-10 K with a potential maximum operating frequency above 1 THz. Edge definition in the base NbN film was accomplished utilizing Ar ion milling with an Al2O3 milling mask, followed by a lower energy ion cleaning step. This process has produced all-refractory-material tunnel junctions with areas as small as 0.1 sq micron, resistance-area products less than 21 ohm sq micron, and subgap to normal state resistance ratios larger than 18.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Spintronic signatures of Klein tunneling in topological insulators

NASA Astrophysics Data System (ADS)

Xie, Yunkun; Tan, Yaohua; Ghosh, Avik W.

2017-11-01

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show an alternative way to directly measure Klein tunneling for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.

The effect of a nonmagnetic cap layer on the spin-polarized tunneling and magnetoresistance in double-barrier planar junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Bo-Zang; Li, Yu-Xian

2003-10-01

Within the framework of the free-electron model, the tunneling magnetoresistance (TMR) and tunneling conductance (TC) in double magnetic tunnel junctions (DMTJ) with nonmagnetic cap layer, i.e. the NM/FM/I/NM/(FM)/I/FM/NM junction is investigated. FM, NM and I represent the ferromagnetic metal, nonmagnetic metal and insulator, respectively, NM(FM) indicates that the middle layer can be NM or FM. Our results show that, due to the spin-dependent interfacial potential barriers, the influences of the thickness of the FM layer on TC and TMR in DMTJ are large, and when the thicknesses of these two FM layers are suitable a large TMR can be obtained. (

Generation of a frequency comb and applications thereof

DOEpatents

Hagmann, Mark J; Yarotski, Dmitry A

2013-12-03

Apparatus for generating a microwave frequency comb (MFC) in the DC tunneling current of a scanning tunneling microscope (STM) by fast optical rectification, cause by nonlinearity of the DC current vs. voltage curve for the tunneling junction, of regularly-spaced, short pulses of optical radiation from a focused mode-locked, ultrafast laser, directed onto the tunneling junction, is described. Application of the MFC to high resolution dopant profiling in semiconductors is simulated. Application of the MFC to other measurements is described.

Microwave amplification based on quasiparticle SIS up and down frequency converters

NASA Astrophysics Data System (ADS)

Kojima, T.; Uzawa, Y.; Shan, W.

2018-02-01

Heterodyne instruments have recently attained quantum-limited low-noise performance, particularly in radio astronomy, but it is difficult to develop large heterodyne arrays such as a modern radio camera using cryogenic sensitive detectors based on microwave kinetic inductance detectors, transition edge sensors, etc. In the realization of the heterodyne array, the reduction of power dissipation for semiconductor-based amplifiers remains a major challenge. Alternatively, superconducting parametric amplifiers still seem to have several barriers to application, especially in terms of operating temperature. Here, we show a novel concept of microwave amplification based on up and down frequency-conversion processes using quasiparticle superconductor-insulator-superconductor (SIS) tunnel junctions. We demonstrate positive gain using a proof-of-concept test module, which operates with a power dissipation of several μW at a bath temperature of 4 K. The performance of the module suggests great potential for application in large arrays.

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Fluoride barriers in Nb/Pb Josephson junctions

NASA Astrophysics Data System (ADS)

Asano, H.; Tanabe, K.; Michikami, O.; Igarashi, M.; Beasley, M. R.

1985-03-01

Josephson tunnel junctions are fabricated using a new class of artificial barriers, metal fluorides (Al fluoride and Zr fluoride). These fluoride barriers are deposited on the surface of a Nb base electrode, which are previously cleaned using a CF4 cleaning process, and covered by a Pb counterelectrode. The junctions with both Al fluoride and Zr fluoride barriers exhibit good tunneling characteristics and have low specific capacitance. In the case of Zr fluoride, it is observed that reasonable resistances are obtained even at thickness greater than 100 A. This phenomenon might be explained by tunneling via localized states in Zr fluoride.

Terahertz Mixing Characteristics of NbN Superconducting Tunnel Junctions and Related Astronomical Observations

NASA Astrophysics Data System (ADS)

Li, J.

2010-01-01

High-sensitivity superconducting SIS (superconductor-insulator-superconductor) mixers are playing an increasingly important role in the terahertz (THz) astronomical observation, which is an emerging research frontier in modern astrophysics. Superconducting SIS mixers with niobium (Nb) tunnel junctions have reached a sensitivity close to the quantum limit, but have a frequency limit about 0.7 THz (i.e., gap frequency of Nb tunnel junctions). Beyond this frequency Nb superconducting films will absorb energetic photons (i.e., energy loss) to break Cooper pairs, thereby resulting in significant degradation of the mixer performance. Therefore, it is of particular interest to develop THz superconducting SIS mixers incorporating tunnel junctions with a larger energy gap. Niobium-nitride (NbN) superconducting tunnel junctions have been long known for their large energy gap, almost double that of Nb ones. With the introduction of epitaxially grown NbN films, the fabrication technology of NbN superconducting tunnel junctions has been considerably improved in the recent years. Nevertheless, their performances are still not as good as Nb ones, and furthermore they are not yet demonstrated in real astronomical applications. Given the facts mentioned above, in this paper we systematically study the quantum mixing behaviors of NbN superconducting tunnel junctions in the THz regime and demonstrate an astronomical testing observation with a 0.5 THz superconducting SIS mixer developed with NbN tunnel junctions. The main results of this study include: (1) successful design and fabrication of a 0.4˜0.6 THz waveguide mixing circuit with the high-dielectric-constant MgO substrate; (2) successful fabrication of NbN superconducting tunnel junctions with the gap voltage reaching 5.6 mV and the quality factor as high as 15; (3) demonstration of a 0.5 THz waveguide NbN superconducting SIS mixer with a measured receiver noise temperature (no correction) as low as five times the quantum limit (5hω/kB), which is the best among NbN superconducting SIS mixers developed in this frequency band; (4) demonstration of high sensitivity for NbN superconducting SIS mixers operated at temperatures as high as 10 K, and demonstration of much less interference resulting from the Josephson effect; (5) demonstration of the first astronomical observation ever done with an NbN superconducting SIS mixer. This study has provided further understanding of the quantum mixing behaviors of NbN superconducting SIS mixers. It has been demonstrated that NbN superconducting SIS mixers can reach nearly quantum-limited sensitivity and have good stability. Furthermore, NbN superconducting SIS mixers have less stringent requirement for cooling and magnetic field compared with Nb ones. Hence they can be used in astronomical applications, especially for space-borne projects and complex systems such as multi-beam receivers.

Nature and electronic properties of Y-junctions in CNTs and N-doped CNTs obtained by the pyrolysis of organometallic precursors

NASA Astrophysics Data System (ADS)

Deepak, F. L.; John, Neena Susan; Govindaraj, A.; Kulkarni, G. U.; Rao, C. N. R.

2005-08-01

Carbon nanotubes (CNTs) and N-doped CNTs with Y-junctions have been prepared by the pyrolysis of nickelocene-thiophene and nickel phthalocyanine-thiophene mixtures, respectively, the latter being reported for the first time. The junctions are free from the presence of sulfur and contain only carbon or carbon and nitrogen. The electronic properties of the junction nanotubes have been investigated by scanning tunneling microscopy. Tunneling conductance measurements reveal rectifying behavior with regions of coulomb blockade, the effect being much larger in the N-doped junction nanotubes.

Transition from direct to inverted charge transport Marcus regions in molecular junctions via molecular orbital gating

NASA Astrophysics Data System (ADS)

Yuan, Li; Wang, Lejia; Garrigues, Alvar R.; Jiang, Li; Annadata, Harshini Venkata; Anguera Antonana, Marta; Barco, Enrique; Nijhuis, Christian A.

2018-04-01

Solid-state molecular tunnel junctions are often assumed to operate in the Landauer regime, which describes essentially activationless coherent tunnelling processes. In solution, on the other hand, charge transfer is described by Marcus theory, which accounts for thermally activated processes. In practice, however, thermally activated transport phenomena are frequently observed also in solid-state molecular junctions but remain poorly understood. Here, we show experimentally the transition from the Marcus to the inverted Marcus region in a solid-state molecular tunnel junction by means of intra-molecular orbital gating that can be tuned via the chemical structure of the molecule and applied bias. In the inverted Marcus region, charge transport is incoherent, yet virtually independent of temperature. Our experimental results fit well to a theoretical model that combines Landauer and Marcus theories and may have implications for the interpretation of temperature-dependent charge transport measurements in molecular junctions.

Junction size dependence of ferroelectric properties in e-beam patterned BaTiO{sub 3} ferroelectric tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, A. V.; Gupta, A.; Althammer, M.

We investigate the switching characteristics in BaTiO{sub 3}-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both samplemore » stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.« less

Reproducible fabrication and applications of superconducting scanning tunneling microscope tips

NASA Astrophysics Data System (ADS)

Naaman, Ofer; Teizer, Winfried; Dynes, Robert C.

2001-03-01

We report on a method developed in our lab, for the fabrication of superconducting scanning tunneling microscope (STM) tips in a reproducible fashion. The fabrication process relies on sequential deposition of superconducting Pb and a proximity-coupled Ag capping layer onto a Pt/Ir tip. The tips were characterized by tunneling into both normal-metal and superconducting films, and the results confirm that the tips are superconducting with Tc and Δ close to that of bulk lead. The lead phonon structure in the tunneling density of states was observed, indicating a single step tunneling process. In an attempt to form STM Josephson junctions, we used our tips to form S/I/S junctions with R_NN ~50-100 kΩ. Results from spectroscopic measurements of these junctions at 2.0 K are discussed within the framework of the Ivanchenko and Zil'berman theory (Soviet Physics JETP, vol.28, 1272; 1969) of Josephson tunneling in the presence of strong phase fluctuations.

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Magnetostatic effects on switching in small magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bapna, Mukund; Piotrowski, Stephan K.; Oberdick, Samuel D.

Perpendicular CoFeB/MgO/CoFeB magnetic tunnel junctions with diameters under 100 nm are investigated by conductive atomic force microscopy. Minor loops of the tunnel magnetoresistance as a function of applied magnetic field reveal the hysteresis of the soft layer and an offset due to the magnetostatic field of the hard layer. Within the hysteretic region, telegraph noise is observed in the tunnel current. Simulations show that in this range, the net magnetic field in the soft layer is spatially inhomogeneous, and that antiparallel to parallel switching tends to start near the edge, while parallel to antiparallel reversal favors nucleation in the interior ofmore » the soft layer. As the diameter of the tunnel junction is decreased, the average magnitude of the magnetostatic field increases, but the spatial inhomogeneity across the soft layer is reduced.« less

Role of interface layers on Tunneling Magnetoresistance

NASA Astrophysics Data System (ADS)

Yang, See-Hun; Samant, Mahesh; Parkin, Stuart S. P.

2002-03-01

Thin non-magnetic metallic layers inserted at the interface between tunneling barriers and the ferromagnetic electrodes in magnetic tunnel junctions quenches the magnetoresistance (TMR) exhibited by some structures[1]. Studies have been carried out on exchange biased magnetic tunnel junction structures in which one of the ferromagnetic electrodes is pinned by coupling to IrMn or PtMn antiferromagnetic layers. For metallic aluminum interface layers thicknesses of just a few angstrom completely suppress the TMR although this characteristic thickness depends on the roughness of the tunneling barrier. A variety of structures will be discussed in which a number of interface layers have been introduced. In particular results for insertion of Cu, Ru and Cr layers on either side of the tunnel barrier will be presented. A number of techniques including XANES, XMCD and high resolution cross-section transmission electron microscopy have been used to study the structure and morphology of the interface layers and to correlate the structure of these layers with the magneto-transport properties of the tunneling junctions. [1] S.S.P. Parkin, US patent 5,764,567 issued by the United States Patent and Trademark Office, June 9, 1998.

Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

PubMed

Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

2017-11-08

We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

NASA Technical Reports Server (NTRS)

Mcgrath, W. R.; Leduc, H. G.; Stern, J. A.

1990-01-01

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Low-Cost, High-Performance Analog Optical Links

DTIC Science & Technology

2006-12-01

connected by tunnel junctions, which permit the forward conduction of current when they are reverse biased . Hence a key step in the development of the... bias voltage, where the measured IV is shown by the dotted curve. The common tunnel junction IV model assumed a triangular-shaped band structure. A... tunneling characteristics with negative differential resistance and a resistance under reverse bias around 12 Ω. This was higher than the previously grown

20. TUNNEL JUNCTION. STACKED EMERGENCY FOOD RATIONS AT LEFT. LAUNCH ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

20. TUNNEL JUNCTION. STACKED EMERGENCY FOOD RATIONS AT LEFT. LAUNCH CONTROL CAPSULE BLAST DOOR AT CENTER. VIEW TO NORTHEAST. - Minuteman III ICBM Launch Control Facility November-1, 1.5 miles North of New Raymer & State Highway 14, New Raymer, Weld County, CO

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

NASA Astrophysics Data System (ADS)

Julin, J. K.; Maasilta, I. J.

2016-10-01

We have developed a technique to fabricate sub-micron, 0.6 μ {{m}}× 0.6 μ {{m}} Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as determined by the the high measured values of the critical temperature {T}{{C}}˜ 7.5 K and the gap {{Δ }}˜ 1.3 meV. The devices show great promise for local nanoscale thermometry in the temperature range 1-7.5 K. Electrical characterization of the junctions was performed at sub-Kelvin temperatures both with and without an external magnetic field, which was used to suppress superconductivity in Al and thus bring the junction into a normal-metal-insulator-superconductor configuration. We observed excess sub-gap current, which could not be explained by the standard tunneling theory. Evidence points towards materials science issues of the barrier or Nb/AlOx interface as the culprit.

Microscopic theory of the Coulomb based exchange coupling in magnetic tunnel junctions.

PubMed

Udalov, O G; Beloborodov, I S

2017-05-04

We study interlayer exchange coupling based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction. This mechanism complements the known interaction between magnetic layers based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based coupling may exceed the hopping based exchange. We show that the Coulomb based exchange interaction, in contrast to the hopping based coupling, depends strongly on the dielectric constant of the insulating layer. The dependence of the interlayer exchange interaction on the dielectric properties of the insulating layer in magnetic tunnel junction is similar to magneto-electric effect where electric and magnetic degrees of freedom are coupled. We calculate the interlayer coupling as a function of temperature and electric field for magnetic tunnel junction with ferroelectric layer and show that the exchange interaction between magnetic leads has a sharp decrease in the vicinity of the ferroelectric phase transition and varies strongly with external electric field.

Impact of semiconducting electrodes on the electroresistance of ferroelectric tunnel junctions

NASA Astrophysics Data System (ADS)

Asa, M.; Bertacco, R.

2018-02-01

Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digital memories and analog memcomputing devices. In this work, we investigate the impact of a semiconducting layer in series to the junction on the sign of electroresistance. To this scope, we compare tunnel junctions fabricated out of Pt/BaTiO3/La1/3Sr2/3MnO3 (LSMO) and Pt/BaTiO3/Nb:SrTiO3 (Nb:STO) heterostructures, displaying an opposite sign of the electroresistance. By capacitance-voltage profiling, we observe a behavior typical of Metal-Oxide-Semiconductor tunnel devices in both cases but compatible with the opposite sign of charge carriers in the semiconducting layer. While Nb:STO displays the expected n-type semiconducting character, metallic LSMO develops an interfacial p-type semiconducting layer. The different types of carriers at the semiconducting interfaces and the modulation of the depleted region by the ferroelectric charge have a deep impact on electroresistance, possibly accounting for the different sign observed in the two systems.

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance

DOEpatents

Murray, Christopher S.; Wilt, David M.

2000-01-01

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMS), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Ferroelectric tunnel junctions with multi-quantum well structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn; Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Snider, Gregory

2000-03-01

Quantum-dot Cellular Automata (QCA) [1] is a promising architecture which employs quantum dots for digital computation. It is a revolutionary approach that holds the promise of high device density and low power dissipation. A basic QCA cell consists of four quantum dots coupled capacitively and by tunnel barriers. The cell is biased to contain two excess electrons within the four dots, which are forced to opposite "corners" of the four-dot cell by mutual Coulomb repulsion. These two possible polarization states of the cell will represent logic "0" and "1". Properly arranged, arrays of these basic cells can implement Boolean logic functions. Experimental results from functional QCA devices built of nanoscale metal dots defined by tunnel barriers will be presented. The experimental devices to be presented consist of Al islands, which we will call quantum dots, interconnected by tunnel junctions and lithographically defined capacitors. Aluminum/ aluminum-oxide/aluminum tunnel junctions were fabricated using a standard e-beam lithography and shadow evaporation technique. The experiments were performed in a dilution refrigerator at a temperature of 70 mK. The operation of a cell is evaluated by direct measurements of the charge state of dots within a cell as the input voltage is changed. The experimental demonstration of a functioning cell will be presented. A line of three cells demonstrates that there are no metastable switching states in a line of cells. A QCA majority gate will also be presented, which is a programmable AND/OR gate and represents the basic building block of QCA systems. The results of recent experiments will be presented. 1. C.S. Lent, P.D. Tougaw, W. Porod, and G.H. Bernstein, Nanotechnology, 4, 49 (1993).

Self-assembled nanoparticle arrays as nanomasks for pattern transfer

NASA Astrophysics Data System (ADS)

Sachan, M.; Bonnoit, C.; Hogg, C.; Evarts, E.; Bain, J. A.; Majetich, S. A.; Park, J.-H.; Zhu, J.-G.

2008-07-01

Argon ion milling was used to transfer the pattern of sparse 12 nm iron oxide nanoparticles into underlying thin films of Pt and magnetic tunnel junction stacks and quantify their etching rates and morphological evolution. Under typical milling conditions, Pt milled at 10 nm min-1, while the isolated particles of iron oxide used for the mask milled at 5 nm min-1. Dilute dispersions of nanoparticles were used to produce the sparse nanomasks, and high resolution scanning electron microscopy (SEM) and atomic force microscopy were used to monitor the evolution of etched structures as a function of milling time. SEM measurements indicate an apparent 20% increase in feature diameter before the features began to diminish under additional milling, suggesting redeposition as a limiting feature in the milling of dense arrays. Simulations of the milling process in nanoparticle arrays that include redeposition are consistent with this observation. These simulations predict that an edge-to-edge spacing of 3 nm in a dense array is feasible, but that redeposition reduces the final structure aspect ratio from that of the masking array by as much as a factor of two.

Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

PubMed

Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

2010-01-15

Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

Field-induced inversion of resonant tunneling currents through single molecule junctions and the directional photo-electric effect

NASA Astrophysics Data System (ADS)

Kuperman, Maayan; Peskin, Uri

2017-03-01

It has been known for several decades that the electric current through tunneling junctions is affected by irradiation. In particular, photon-assisted currents by asymmetric irradiation of the two leads was demonstrated and studied extensively in tunneling junctions of different compositions and for different radiation wavelengths. In this work, this phenomenon is revisited in the context of single molecule junctions. Restricting the theoretical discussion to adiabatic periodic driving of one lead with respect to the other within a non-interacting electron formulation, the main features of specific molecules are encoded in the discrete electronic energy levels. The detailed level structure of the molecule is shown to yield new effects in the presence of asymmetric driving of the leads. In particular, when the field-free tunneling process is dominated by a single electronic level, the electric current can be suppressed to zero or flow against the direction of an applied static bias. In the presence of a second electronic level, a directional photo-electric effect is predicted, where not only the magnitude but also the direction of the steady state electric current through the tunneling junction can be changed by a monotonous increase of the field intensity. These effects are analyzed and explained by outlying the relevant theory, using analytic expressions in the wide-band limit, as well as numerical simulations beyond this limit.

Prism-coupled light emission from tunnel junctions

NASA Technical Reports Server (NTRS)

Ushioda, S.; Rutledge, J. E.; Pierce, R. M.

1985-01-01

Completely p-polarized light emission has been observed from smooth Al-AlO(x)-Au tunnel junctions placed on a prism coupler. The angle and polarization dependence demonstrate unambiguously that the emitted light is radiated by the fast-mode surface plasmon polariton. The emission spectra suggest that the dominant process for the excitation of the fast mode is through conversion of the slow mode to the fast mode mediated by residual roughness on the junction surface.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

NASA Astrophysics Data System (ADS)

Sun, Jonathan Z.

2016-10-01

Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

High-temperature tunneling electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Xi, Zhongnan; Jin, Qiao; Zheng, Chunyan; Zhang, Yongcheng; Lu, Chaojing; Li, Qiang; Li, Shandong; Dai, Jiyan; Wen, Zheng

2017-09-01

Recently, ferroelectric tunnel junctions (FTJs) have attracted great attention due to promising applications in non-volatile memories. In this study, we report high-temperature tunneling electroresistance (TER) of metal/ferroelectric/semiconductor FTJs. Hysteretic resistance-voltage loops are observed in the Pt/BaTiO3/Nb:SrTiO3 tunnel junction from 300 to 513 K due to the modulation of interfacial Schottky barrier by polarization switching in the 4 u.c.-thick BaTiO3 barrier via a ferroelectric field effect. The Pt/BaTiO3/Nb:SrTiO3 device exhibits a giant ROFF/RON resistance ratio of ˜3 × 105 at 383 K and maintains bipolar resistance switching up to 513 K, suggesting excellent thermal endurance of the FTJs. The temperature-dependent TER behaviors are discussed in terms of the decrease of polarization in the BaTiO3 barrier, and the associated junction barrier profiles are deduced by transport and capacitance analyses. In addition, by extrapolating the retention time at elevated temperature in an Arrhenius-type relation, activation energy of ˜0.93 eV and room-temperature retention time of ˜70 years can be extracted.

Electromagnetic properties of thin-film transformer-coupled superconducting tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finnegan, T.F.; Lacquaniti, V.; Vaglio, R.

1981-09-01

Multisection superconducting microstrip transformers with designed output impedances below 0.1 ..cap omega.. have been fabricated via precise photolithographic techniques to investigate the electromagnetic properties of Nb-Nb oxide-Pb tunnel junctions. The low-impedance transformer sections incorporate a rf sputtered thin-film Ta-oxide dielectric, and the reproducible external coupling achievable with this type of geometry makes possible the systematic investigation of electromagnetic device parameters as a function of tunneling oxide thickness.

Controlling charge transport mechanisms in molecular junctions: Distilling thermally induced hopping from coherent-resonant conduction.

PubMed

Kim, Hyehwang; Segal, Dvira

2017-04-28

The electrical conductance of molecular junctions may depend strongly on the temperature and weakly on molecular length, under two distinct mechanisms: phase-coherent resonant conduction, with charges proceeding via delocalized molecular orbitals, and incoherent thermally assisted multi-step hopping. While in the case of coherent conduction, the temperature dependence arises from the broadening of the Fermi distribution in the metal electrodes, in the latter case it corresponds to electron-vibration interaction effects on the junction. With the objective to distill the thermally activated hopping component, thus exposing intrinsic electron-vibration interaction phenomena on the junction, we suggest the design of molecular junctions with "spacers," extended anchoring groups that act to filter out phase-coherent resonant electrons. Specifically, we study the electrical conductance of fixed-gap and variable-gap junctions that include a tunneling block, with spacers at the boundaries. Using numerical simulations and analytical considerations, we demonstrate that in our design, resonant conduction is suppressed. As a result, the electrical conductance is dominated by two (rather than three) mechanisms: superexchange (deep tunneling) and multi-step thermally induced hopping. We further exemplify our analysis on DNA junctions with an A:T block serving as a tunneling barrier. Here, we show that the electrical conductance is insensitive to the number of G:C base-pairs at the boundaries. This indicates that the tunneling-to-hopping crossover revealed in such sequences truly corresponds to the properties of the A:T barrier.

Phase-dependent noise in Josephson junctions

NASA Astrophysics Data System (ADS)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Ferroelectric switching of band alignments in LSMO/PZT/Co multiferroic tunnel junctions: an ab initio study.

PubMed

Imam, M; Stojić, N; Binggeli, N

2017-08-04

Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in [Formula: see text] (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.

Magnetic Tunnel Junctions Based On Alkanethiol Self Assembled Monolayers

NASA Astrophysics Data System (ADS)

Delprat, Sophie; Quinard, Benoit; Galbiati, Marta; Mattera, Michele; Manas-Valero, Samuel; Forment-Aliaga, Alicia; Tatay, Sergio; Deranlot, Cyrile; Collin, Sophie; Bouzehouane, Karim; Mattana, Richard; Seneor, Pierre; Petroff, Frederic

Molecular spintronics has opened novel and exciting functionalities for spintronics devices. Among them, it was shown that spin dependent hybridization at metal/molecule interfaces could lead to radical tailoring of spintronics properties. In this direction Self-Assembled Monolayers (SAMs) appear to be a very promising candidate with their impressive molecular scale crafting properties. Despite all the promising possibilities, up to now less than a handful of experiments on SAMs as spin-dependent tunnel barriers have been reported at low temperatures, but already showing potential. Towards room temperature spin signal, we studied magnetic tunnel junctions based on alkanethiol and conventional ferromagnets such as Co,NiFe for which we developed a process to recover the ferromagnet from oxidiation. We will present NiFe/SAMs/Co molecular magnetic tunnel junctions with magnetoresistance effects up to 10% observed at 300K.

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

NASA Astrophysics Data System (ADS)

Jiang, Jun; Zhang, X.-G.; Han, X. F.

2016-04-01

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

Tunnel junction of helical edge states: Determining and controlling spin-preserving and spin-flipping processes through transconductance

NASA Astrophysics Data System (ADS)

Sternativo, Pietro; Dolcini, Fabrizio

2014-01-01

When a constriction is realized in a 2D quantum spin Hall system, electron tunneling between helical edge states occurs via two types of channels allowed by time-reversal symmetry, namely spin-preserving (p) and spin-flipping (f) tunneling processes. Determining and controlling the effects of these two channels is crucial to the application of helical edge states in spintronics. We show that, despite that the Hamiltonian terms describing these two processes do not commute, the scattering matrix entries of the related 4-terminal setup always factorize into products of p-term and f-term contributions. Such factorization provides an operative way to determine the transmission coefficients Tp and Tf related to each of the two processes, via transconductance measurements. Furthermore, these transmission coefficients are also found to be controlled independently by a suitable combination of two gate voltages applied across the junction. This result holds for an arbitrary profile of the tunneling amplitudes, including disorder in the tunnel region, enabling us to discuss the effect of the finite length of the tunnel junction, and the space modulation of both magnitude and phase of the tunneling amplitudes.

Distribution of tunnelling times for quantum electron transport.

PubMed

Rudge, Samuel L; Kosov, Daniel S

2016-03-28

In electron transport, the tunnelling time is the time taken for an electron to tunnel out of a system after it has tunnelled in. We define the tunnelling time distribution for quantum processes in a dissipative environment and develop a practical approach for calculating it, where the environment is described by the general Markovian master equation. We illustrate the theory by using the rate equation to compute the tunnelling time distribution for electron transport through a molecular junction. The tunnelling time distribution is exponential, which indicates that Markovian quantum tunnelling is a Poissonian statistical process. The tunnelling time distribution is used not only to study the quantum statistics of tunnelling along the average electric current but also to analyse extreme quantum events where an electron jumps against the applied voltage bias. The average tunnelling time shows distinctly different temperature dependence for p- and n-type molecular junctions and therefore provides a sensitive tool to probe the alignment of molecular orbitals relative to the electrode Fermi energy.

Magnetic-field-controlled negative differential conductance in scanning tunneling spectroscopy of graphene npn junction resonators

NASA Astrophysics Data System (ADS)

Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin

2018-03-01

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.

Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions.

PubMed

Parzefall, M; Bharadwaj, P; Jain, A; Taniguchi, T; Watanabe, K; Novotny, L

2015-12-01

The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

Tunneling readout of hydrogen-bonding based recognition

PubMed Central

Chang, Shuai; He, Jin; Kibel, Ashley; Lee, Myeong; Sankey, Otto; Zhang, Peiming; Lindsay, Stuart

2009-01-01

Hydrogen bonding has a ubiquitous role in electron transport1,2 and in molecular recognition, with DNA base-pairing being the best known example.3 Scanning tunneling microscope (STM) images4 and measurements of the decay of tunnel-current as a molecular junction is pulled apart by the STM tip, 5 are sensitive to hydrogen-bonded interactions. Here we show that these tunnel-decay signals can be used to measure the strength of hydrogen bonding in DNA basepairs. Junctions that are held together by three hydrogen bonds per basepair (e.g., guanine-cytosine interactions) are stiffer than junctions held together by two hydrogen bonds per basepair (e.g., adenine-thymine interactions). Similar, but less-pronounced, effects are observed on the approach of the tunneling probe, implying that hydrogen-bond dependent attractive forces also have a role in determining the rise of current. These effects provide new mechanisms for making sensors that transduce a molecular recognition event into an electronic signal. PMID:19421214

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

1992-01-01

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

FAST TRACK COMMUNICATION: Eight-logic memory cell based on multiferroic junctions

NASA Astrophysics Data System (ADS)

Yang, Feng; Zhou, Y. C.; Tang, M. H.; Liu, Fen; Ma, Ying; Zheng, X. J.; Zhao, W. F.; Xu, H. Y.; Sun, Z. H.

2009-04-01

A model is proposed for a device combining a multiferroic tunnel junction with a magnetoelectric (ME) film in which the magnetic configuration is controlled by the electric field. Calculations embodying the Green's function approach show that the magnetic polarization can be switched on and off by an electric field in the ME film due to the effect of elastic coupling interaction. Using a model including the spin-filter effect and screening of polarization charges, we have produced eight logic states of tunnelling resistance in the tunnel junction and have obtained corresponding laws that control them. The results provide some insights into the realization of an eight-logic memory cell.

Mapping the Transmission Functions of Single-Molecule Junctions.

PubMed

Capozzi, Brian; Low, Jonathan Z; Xia, Jianlong; Liu, Zhen-Fei; Neaton, Jeffrey B; Campos, Luis M; Venkataraman, Latha

2016-06-08

Charge transport phenomena in single-molecule junctions are often dominated by tunneling, with a transmission function dictating the probability that electrons or holes tunnel through the junction. Here, we present a new and simple technique for measuring the transmission functions of molecular junctions in the coherent tunneling limit, over an energy range of 1.5 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different exposed areas, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junction Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction's transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed from first principles. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behaviormore » at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.« less

Tunneling explains efficient electron transport via protein junctions.

PubMed

Fereiro, Jerry A; Yu, Xi; Pecht, Israel; Sheves, Mordechai; Cuevas, Juan Carlos; Cahen, David

2018-05-15

Metalloproteins, proteins containing a transition metal ion cofactor, are electron transfer agents that perform key functions in cells. Inspired by this fact, electron transport across these proteins has been widely studied in solid-state settings, triggering the interest in examining potential use of proteins as building blocks in bioelectronic devices. Here, we report results of low-temperature (10 K) electron transport measurements via monolayer junctions based on the blue copper protein azurin (Az), which strongly suggest quantum tunneling of electrons as the dominant charge transport mechanism. Specifically, we show that, weakening the protein-electrode coupling by introducing a spacer, one can switch the electron transport from off-resonant to resonant tunneling. This is a consequence of reducing the electrode's perturbation of the Cu(II)-localized electronic state, a pattern that has not been observed before in protein-based junctions. Moreover, we identify vibronic features of the Cu(II) coordination sphere in transport characteristics that show directly the active role of the metal ion in resonance tunneling. Our results illustrate how quantum mechanical effects may dominate electron transport via protein-based junctions.

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Buchanan, J. D. R.; Hase, T. P. A.; Tanner, B. K.; Hughes, N. D.; Hicken, R. J.

2002-07-01

The barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

NASA Astrophysics Data System (ADS)

Karbasian, Golnaz

The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials. As described below in detail, the fabrication of ultra-thin (~1nm) tunnel transparent barriers with PEALD is in fact challenging; we demonstrate that in fabrication of SETs with PEALD to form the barrier in the Ni-insulator-Ni tunnel junctions, additional NiO layers are parasitically formed in the Ni layers that form the top and bottom electrodes of the tunnel junctions. The NiO on the bottom electrode is formed due to oxidizing effect of the O 2 plasma used in the PEALD process, while the NiO on the bottom of the top electrode is believed to form during the metal deposition due to oxygen-containing contaminants on the surface of the deposited tunnel barrier. We also show that due to the presence of these surface parasitic layers of NiO, the resistance of Ni-insulator-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with the tunnel barrier in series with compound layers of NiO and possibly, NiSixOy. The parasitic component in the tunnel junctions results in conduction freeze-out at low temperatures, deviation of junction parameters from ideal model, and excessive noise in the device. The reduction of NiO to Ni is therefore necessary to restore the metal-insulator-metal structure of the junctions. We have studied forming gas anneal as well as H2 plasma treatment as techniques to reduce the NiO layers that are parasitically formed in the junctions. Using either of these two techniques, we reduced the NiO formed on the island after being covered with the PEALD dielectric and before defining the top source and drain. Later, the NiO formed on the bottom of the source/drain is reduced during a second reducing step after the source/drain are formed on the tunnel barrier. Electrical characterization of SETs that are made with the proposed reducing treatments enable us to study the effect of each reducing process on the properties of the constituent tunnel junctions. In comparison to the junctions annealed twice in forming gas at 400°C, we consistently observed a ~10x higher conductance in devices treated twice with H2 plasma at 300°C. The possible damage to the barrier during the plasma treatment and thermally induced film deformation during the anneal which respectively, is believed to increase and lower the conductance are among the possible cause of this difference. Although both types of treatments were effective in alleviating the effect of the activated components in the junctions, all the devices that were treated by two anneal steps or by two H2 plasma steps (for reducing the top and bottom NiO) show deviations from ideal simulated MIM SET model and suffer from significant random telegraph signal (RTS) noise. However, our results show that by using forming gas anneal for bottom NiO reduction and H2 plasma for the top NiO reduction, one can achieve devices close to ideal MIM SETs with significantly less noise.

Ramp-edge structured tunneling devices using ferromagnet electrodes

DOEpatents

Kwon, Chuhee [Long Beach, CA; Jia, Quanxi [Los Alamos, NM

2002-09-03

The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La.sub.0.7 Sr.sub.0.3) MnO.sub.3, ferromagnetic electrodes and a SrTiO.sub.3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE PAGES

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; ...

2018-02-13

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Quantum decrease of capacitance in a nanometer-sized tunnel junction

NASA Astrophysics Data System (ADS)

Untiedt, C.; Saenz, G.; Olivera, B.; Corso, M.; Sabater, C.; Pascual, J. I.

2013-03-01

We have studied the capacitance of the tunnel junction defined by the tip and sample of a Scanning Tunnelling Microscope through the measurement of the electrostatic forces and impedance of the junction. A decrease of the capacitance when a tunnel current is present has shown to be a more general phenomenon as previously reported in other systems. On another hand, an unexpected reduction of the capacitance is also observed when increasing the applied voltage above the work function energy of the electrodes to the Field Emission (FE) regime, and the decrease of capacitance due to a single FE-Resonance has been characterized. All these effects should be considered when doing measurements of the electronic characteristics of nanometer-sized electronic devices and have been neglected up to date. Spanish government (FIS2010-21883-C02-01, CONSOLIDER CSD2007-0010), Comunidad Valenciana (ACOMP/2012/127 and PROMETEO/2012/011)

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

DOE PAGES

Newhouse-Illige, Ty; Liu, Yaohua; Xu, M.; ...

2017-05-16

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdO x tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and amore » large proximity-induced magnetization of GdO x, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. Lastly, these results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.« less

Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newhouse-Illige, Ty; Liu, Yaohua; Xu, M.

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdO x tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and amore » large proximity-induced magnetization of GdO x, both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. Lastly, these results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.« less

Thermoelectric effects in superconductor-ferromagnet tunnel junctions on europium sulfide

NASA Astrophysics Data System (ADS)

Kolenda, S.; Sürgers, C.; Fischer, G.; Beckmann, D.

2017-06-01

We report on large thermoelectric effects in superconductor-ferromagnet tunnel junctions in proximity contact with the ferromagnetic insulator europium sulfide. The combination of a spin-splitting field and spin-polarized tunnel conductance in these systems breaks the electron-hole symmetry and leads to spin-dependent thermoelectric currents. We show that the exchange splitting induced by europium sulfide boosts the thermoelectric effect in small applied fields and can therefore eliminate the need to apply large magnetic fields, which might otherwise impede applications in thermometry or cooling.

Memristive switching of MgO based magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Krzysteczko, Patryk; Reiss, Günter; Thomas, Andy

2009-09-01

Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.

Experimental Studies of Josephson Effect

DTIC Science & Technology

1990-09-06

to test predictions that macroscopic variables, such as the flux through a SQUID loop, display quantum mechanical properties such as tunneling and...approximately Oo/L as flux quanta enter the loop. In the Josephson junctions used here are lead-alloy tunnel junc- linear region, for I, <<J, the rate...magnetometer. The junctions ln(F)-AU/kT+In(f/2z). (3) used were nominal I x I pm 2 Nb/AI2O3/Nb tunnel junc- As Fig. 3 shows, the observed dependence is in

Fermi edge singularity in a tunnel junction

NASA Astrophysics Data System (ADS)

Zhang, Jin; Sherkunov, Yury; D'Ambrumenil, Nicholas; Muzykantskii, Boris

2010-03-01

We present results on the non-equilibrium Fermi edge singularity (FES) problem in tunnel junctions. The FES, which is present in a Fermi gas subject to any sudden change of potential, manifests itself in the final state many body interaction between the electrons in the leads [1]. We establish a connection between the FES problem in a tunnel junction and the Full Counting Statistics (FCS) for the device [2]. We find that the exact profile of the changing potential (or the profile for the barrier opening and closing in the tunnel junction case) strongly affects the overlap between the initial and final state of the Fermi gas. We factorize the contribution to the FES into two approximately independent terms: one is connected with the short time opening process while the other is concerned with the long time asymptotic effect, namely the Anderson orthogonality catastrophe. We consider applications to a localized level coupled through a tunnel barrier to a 1D lead driven out of equilibrium [3]. References: [1] G. Mahan, Phys. Rev. 163, 1612 (1967); P. Nozieres and C. T. De Dominicis, Phys. Rev. 178, 1079 (1969); P. Anderson, Phys. Rev. Lett. 18, 1049 (1967) [2] J. Zhang, Y. Sherkunov, N. d'Ambrumenil, and B. Muzykantskii, ArXiv:0909.3427 [3] D. Abanin and L. Levitov, Phys. Rev. Lett. 94, 186803 (2005)

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin; Hwang, Sunyong; Kim, Sung Kyu; Kim, Jong Kyu; Jeong, Hu Young; Hong, Young Joon

2016-09-01

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.

Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less

Towards molecular electronics with large-area molecular junctions.

PubMed

Akkerman, Hylke B; Blom, Paul W M; de Leeuw, Dago M; de Boer, Bert

2006-05-04

Electronic transport through single molecules has been studied extensively by academic and industrial research groups. Discrete tunnel junctions, or molecular diodes, have been reported using scanning probes, break junctions, metallic crossbars and nanopores. For technological applications, molecular tunnel junctions must be reliable, stable and reproducible. The conductance per molecule, however, typically varies by many orders of magnitude. Self-assembled monolayers (SAMs) may offer a promising route to the fabrication of reliable devices, and charge transport through SAMs of alkanethiols within nanopores is well understood, with non-resonant tunnelling dominating the transport mechanism. Unfortunately, electrical shorts in SAMs are often formed upon vapour deposition of the top electrode, which limits the diameter of the nanopore diodes to about 45 nm. Here we demonstrate a method to manufacture molecular junctions with diameters up to 100 microm with high yields (> 95 per cent). The junctions show excellent stability and reproducibility, and the conductance per unit area is similar to that obtained for benchmark nanopore diodes. Our technique involves processing the molecular junctions in the holes of a lithographically patterned photoresist, and then inserting a conducting polymer interlayer between the SAM and the metal top electrode. This simple approach is potentially low-cost and could pave the way for practical molecular electronics.

Exact analytical solution of a classical Josephson tunnel junction problem

NASA Astrophysics Data System (ADS)

Kuplevakhsky, S. V.; Glukhov, A. M.

2010-10-01

We give an exact and complete analytical solution of the classical problem of a Josephson tunnel junction of arbitrary length W ɛ(0,∞) in the presence of external magnetic fields and transport currents. Contrary to a wide-spread belief, the exact analytical solution unambiguously proves that there is no qualitative difference between so-called "small" (W≪1) and "large" junctions (W≫1). Another unexpected physical implication of the exact analytical solution is the existence (in the current-carrying state) of unquantized Josephson vortices carrying fractional flux and located near one of the edges of the junction. We also refine the mathematical definition of critical transport current.

dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lewandowski, S.J.

1991-04-01

A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-{ital T}{sub {ital c}} superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming amore » series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-{ital T}{sub {ital c}} materials are pointed out as a potential source of additional noise.« less

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

PubMed

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions

NASA Astrophysics Data System (ADS)

Meena, Shweta; Choudhary, Sudhanshu

2017-12-01

Spin polarized properties of fluorinated graphene as tunnel barrier with CrO2 as two HMF electrodes are studied using first principle methods based on density functional theory. Fluorinated graphene with different fluorine coverages is explored as tunnel barriers in magnetic tunnel junctions. Density functional computation for different fluorine coverages imply that with increase in fluorine coverages, there is increase in band gap (Eg) of graphene, Eg ˜ 3.466 e V was observed when graphene sheet is fluorine adsorbed on both-side with 100% coverage (CF). The results of CF graphene are compared with C4F (fluorination on one-side of graphene sheet with 25% coverage) and out-of-plane graphene based magnetic tunnel junctions. On comparison of the results it is observed that CF graphene based structure offers high TMR ˜100%, and the transport of carrier is through tunneling as there are no transmission states near Fermi level. This suggests that graphene sheet with both-side fluorination with 100% coverages acts as a perfect insulator and hence a better barrier to the carriers which is due to negligible spin down current (I ↓ ) in both Parallel Configuration (PC) and Antiparallel Configuration (APC).

Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiOxNy tunnel barrier

NASA Astrophysics Data System (ADS)

Nakane, Ryosho; Hada, Takato; Sato, Shoichi; Tanaka, Masaaki

2018-04-01

We studied the spin accumulation signals in phosphorus-doped n+-Si (8 × 1019 cm-3) by measuring the spin transport in three-terminal vertical devices with Fe(3 nm)/Mg(0 and 1 nm)/SiOxNy(1 nm)/n+-Si(001) tunnel junctions, where the amorphous SiOxNy layer was formed by oxnitridation of the Si substrate with radio frequency plasma. Obvious spin accumulation signals were observed at 4-300 K in the spin extraction geometry when the thickness of the Mg insertion layer was 1 nm. We found that by inserting a thin (1 nm) Mg layer, intermixing of Fe and SiOxNy is suppressed, leading to the appearance of the spin accumulation signals, and this result is consistent with the dead layer model recently proposed by our group [S. Sato et al., Appl. Phys. Lett. 107, 032407 (2015)]. We obtained relatively high spin polarization (PS) of electrons tunneling through the junction and long spin lifetime (τS): PS = 16% and τS = 5.6 ns at 4 K and PS = 7.5% and τS = 2.7 ns at 300 K. Tunnel junctions with an amorphous SiOxNy tunnel barrier are very promising for Si-based spintronic devices, since they can be formed by the method compatible with the silicon complementary metal-oxide-semiconductor technology.

Universal Readers Based on Hydrogen Bonding or π-π Stacking for Identification of DNA Nucleotides in Electron Tunnel Junctions.

PubMed

Biswas, Sovan; Sen, Suman; Im, JongOne; Biswas, Sudipta; Krstic, Predrag; Ashcroft, Brian; Borges, Chad; Zhao, Yanan; Lindsay, Stuart; Zhang, Peiming

2016-12-27

A reader molecule, which recognizes all the naturally occurring nucleobases in an electron tunnel junction, is required for sequencing DNA by a recognition tunneling (RT) technique, referred to as a universal reader. In the present study, we have designed a series of heterocyclic carboxamides based on hydrogen bonding and a large-sized pyrene ring based on a π-π stacking interaction as universal reader candidates. Each of these compounds was synthesized to bear a thiolated linker for attachment to metal electrodes and examined for their interactions with naturally occurring DNA nucleosides and nucleotides by 1 H NMR, ESI-MS, computational calculations, and surface plasmon resonance. RT measurements were carried out in a scanning tunnel microscope. All of these molecules generated electrical signals with DNA nucleotides in tunneling junctions under physiological conditions (phosphate buffered aqueous solution, pH 7.4). Using a support vector machine as a tool for data analysis, we found that these candidates distinguished among naturally occurring DNA nucleotides with the accuracy of pyrene (by π-π stacking interactions) > azole carboxamides (by hydrogen-bonding interactions). In addition, the pyrene reader operated efficiently in a larger tunnel junction. However, the azole carboxamide could read abasic (AP) monophosphate, a product from spontaneous base hydrolysis or an intermediate of base excision repair. Thus, we envision that sequencing DNA using both π-π stacking and hydrogen-bonding-based universal readers in parallel should generate more comprehensive genome sequences than sequencing based on either reader molecule alone.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fen; Chen, Aixi; Institute for Quantum Computing & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1 Canada

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsicmore » properties.« less

Gate-controlled current and inelastic electron tunneling spectrum of benzene: a self-consistent study.

PubMed

Liang, Y Y; Chen, H; Mizuseki, H; Kawazoe, Y

2011-04-14

We use density functional theory based nonequilibrium Green's function to self-consistently study the current through the 1,4-benzenedithiol (BDT). The elastic and inelastic tunneling properties through this Au-BDT-Au molecular junction are simulated, respectively. For the elastic tunneling case, it is found that the current through the tilted molecule can be modulated effectively by the external gate field, which is perpendicular to the phenyl ring. The gate voltage amplification comes from the modulation of the interaction between the electrodes and the molecules in the junctions. For the inelastic case, the electron tunneling scattered by the molecular vibrational modes is considered within the self-consistent Born approximation scheme, and the inelastic electron tunneling spectrum is calculated.

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

Enhancement of Spin-transfer torque switching via resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torquemore » thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.« less

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction

NASA Astrophysics Data System (ADS)

Chamoli, Tanuj; Ajay

2018-05-01

The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK < superconducting transition temperature TC). Employing non-equilibrium Green's function approach within mean field approximation, we have obtained expressions for density of states (DOS) and analysed the same using numerical computation to underline the nature of DOS close to Fermi level in S-DQD-S junctions. On the basis of numerical computation, it is pointed out that indirect exchange interaction between impurities (QD) i.e. RKKY interaction suppresses the screening of magnetic QD due to Cooper pair electrons i.e. Kondo effect in the form of reduction in the magnitude of sharp DOS peak close to Fermi level which is in qualitative agreement with the experimental observations in such tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.

Testing the kibble-zurek scenario with annular josephson tunnel junctions

PubMed

Kavoussanaki; Monaco; Rivers

2000-10-16

In parallel with Kibble's description of the onset of phase transitions in the early Universe, Zurek has provided a simple picture for the onset of phase transitions in condensed matter systems, supported by agreement with experiments in 3He and superconductors. We show how experiments with annular Josephson tunnel junctions can, and do, provide further support for this scenario.

Numerical investigation on an array of Helmholtz resonators for the reduction of micro-pressure waves in modern and future high-speed rail tunnel systems

NASA Astrophysics Data System (ADS)

Tebbutt, J. A.; Vahdati, M.; Carolan, D.; Dear, J. P.

2017-07-01

Previous research has proposed that an array of Helmholtz resonators may be an effective method for suppressing the propagation of pressure and sound waves, generated by a high-speed train entering and moving in a tunnel. The array can be used to counteract environmental noise from tunnel portals and also the emergence of a shock wave in the tunnel. The implementation of an array of Helmholtz resonators in current and future high-speed train-tunnel systems is studied. Wave propagation in the tunnel is modelled using a quasi-one-dimensional formulation, accounting for non-linear effects, wall friction and the diffusivity of sound. A multi-objective genetic algorithm is then used to optimise the design of the array, subject to the geometric constraints of a demonstrative tunnel system and the incident wavefront in order to attenuate the propagation of pressure waves. It is shown that an array of Helmholtz resonators can be an effective countermeasure for various tunnel lengths. In addition, the array can be designed to function effectively over a wide operating envelope, ensuring it will still function effectively as train speeds increase into the future.

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, M.; Iverson, E. W.; Wang, C. Y.

2015-11-02

For a direct-gap semiconductor (e.g., a p-n junction), photon-assisted tunneling is known to exhibit a high nonlinear absorption. In a transistor laser, as discussed here, the coherent photons generated at the quantum well interact with the collector junction field and “assist” electron tunneling from base to collector, thus resulting in the nonlinear modulation of the laser and the realization of optical pulse generation. 1 and 2 GHz optical pulses are demonstrated in the transistor laser using collector voltage control.

A Wide Area Bipolar Cascade Resonant Cavity Light Emitting Diode for a Hybrid Range-Intensity Sensor

DTIC Science & Technology

2008-06-19

forward bias voltage and a small amount of current flow- ing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due...flowing due to a forward biased tunnel current. (d) shows a drop in the forward bias current due to the widening of the forbidden band, and fewer...3-14 xii Figure Page 3.10. Energy bands of a tunnel junction at various bias levels. (a) shows the junction under reverse bias with holes in

Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions

NASA Astrophysics Data System (ADS)

Jia, Xingtao; Tang, Huimin; Wang, Shizhuo; Qin, Minghui

2017-02-01

We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions based on first-principles scattering theory. MR as large as ˜100 % is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10-1mV and current density of order 105Acm-2 can switches a junction of three-layer MgO, they are about one order smaller than that in Fe |MgO |Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

PubMed

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

NASA Astrophysics Data System (ADS)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

A directional microphone array for acoustic studies of wind tunnel models

NASA Technical Reports Server (NTRS)

Soderman, P. T.; Noble, S. C.

1974-01-01

An end-fire microphone array that utilizes a digital time delay system has been designed and evaluated for measuring noise in wind tunnels. The directional response of both a four- and eight-element linear array of microphones has enabled substantial rejection of background noise and reverberations in the NASA Ames 40- by 80-foot wind tunnel. In addition, it is estimated that four- and eight-element arrays reject 6 and 9 dB, respectively, of microphone wind noise, as compared with a conventional omnidirectional microphone with nose cone. Array response to two types of jet engine models in the wind tunnel is presented. Comparisons of array response to loudspeakers in the wind tunnel and in free field are made.

Tunnel junction based memristors as artificial synapses

PubMed Central

Thomas, Andy; Niehörster, Stefan; Fabretti, Savio; Shepheard, Norman; Kuschel, Olga; Küpper, Karsten; Wollschläger, Joachim; Krzysteczko, Patryk; Chicca, Elisabetta

2015-01-01

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms. PMID:26217173

Synchronization of Large Josephson-Junction Arrays by Traveling Electromagnetic Waves

NASA Astrophysics Data System (ADS)

Galin, M. A.; Borodianskyi, E. A.; Kurin, V. V.; Shereshevskiy, I. A.; Vdovicheva, N. K.; Krasnov, V. M.; Klushin, A. M.

2018-05-01

Mutual synchronization of many Josephson junctions is required for superradiant enhancement of the emission power. However, the larger the junction array is, the more difficult is the synchronization, especially when the array size becomes much larger than the emitted wavelength. Here, we study experimentally Josephson emission from such larger-than-the-wavelength Nb /NbSi /Nb junction arrays. For one of the arrays we observe a clear superradiant enhancement of emission above a threshold number of active junctions. The arrays exhibit strong geometrical resonances, seen as steps in current-voltage characteristics. However, radiation patterns of the arrays have forward-backward asymmetry, which is inconsistent with the solely geometrical resonance (standing-wave) mechanism of synchronization. We argue that the asymmetry provides evidence for an alternative mechanism of synchronization mediated by unidirectional traveling-wave propagation along the array (such as a surface plasmon). In this case, emission occurs predominantly in the direction of propagation of the traveling wave. Our conclusions are supported by numerical modeling of Josephson traveling-wave antenna. We argue that such a nonresonant mechanism of synchronization opens a possibility for phase locking of very large arrays of oscillators.

Spin-polarized current in Zeeman-split d-wave superconductor/quantum wire junctions

NASA Astrophysics Data System (ADS)

Emamipour, Hamidreza

2016-06-01

We study a thin-film quantum wire/unconventional superconductor junction in the presence of an intrinsic exchange field for a d-wave symmetry of the superconducting order parameter. A strongly spin-polarized current is generated due to an interplay between Zeeman splitting of bands and the nodal structure of the superconducting order parameter. We show that strongly spin-polarized current is achievable for both metallic and tunnel junctions. This is because of the presence of a quantum wire (one-dimensional metal) in our junction. While in two-dimensional junctions with both conventional [F. Giazotto, F. Taddei, Phys. Rev. B 77 (2008) 132501] and unconventional [J. Linder, T. Yokoyama, Y. Tanaka, A. Sudbo, Phys. Rev. B 78 (2008) 014516] pairing states, highly spin polarized current takes place just for a tunnel junction. Also, the obtained spin-polarized current is tunable in sign and magnitude in terms of exchange field and applied bias voltage.

Thermopower of molecular junctions: Tunneling to hopping crossover in DNA

NASA Astrophysics Data System (ADS)

Korol, Roman; Kilgour, Michael; Segal, Dvira

2016-12-01

We study the electrical conductance G and the thermopower S of single-molecule junctions and reveal signatures of different transport mechanisms: off-resonant tunneling, on-resonant coherent (ballistic) motion, and multi-step hopping. These mechanisms are identified by studying the behavior of G and S while varying molecular length and temperature. Based on a simple one-dimensional model for molecular junctions, we derive approximate expressions for the thermopower in these different regimes. Analytical results are compared to numerical simulations, performed using a variant of Büttiker's probe technique, the so-called voltage-temperature probe, which allows us to phenomenologically introduce environmentally induced elastic and inelastic electron scattering effects, while applying both voltage and temperature biases across the junction. We further simulate the thermopower of GC-rich DNA sequences with mediating A:T blocks and manifest the tunneling-to-hopping crossover in both the electrical conductance and the thermopower, in accord with measurements by Li et al. [Nat. Commun. 7, 11294 (2016)].

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

ac Josephson effect and resonant Cooper pair tunneling emission of a single Cooper pair transistor.

PubMed

Billangeon, P-M; Pierre, F; Bouchiat, H; Deblock, R

2007-05-25

We measure the high-frequency emission of a single Cooper pair transistor (SCPT) in the regime where transport is only due to tunneling of Cooper pairs. This is achieved by coupling on chip the SCPT to a superconductor-insulator-superconductor junction and by measuring the photon assisted tunneling current of quasiparticles across the junction. This technique allows a direct detection of the ac Josephson effect of the SCPT and provides evidence of Landau-Zener transitions for proper gate voltage. The emission in the regime of resonant Cooper pair tunneling is also investigated. It is interpreted in terms of transitions between charge states coupled by the Josephson effect.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

PubMed

Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

2016-09-15

Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

Josephson flux-flow oscillator: The microscopic tunneling approach

NASA Astrophysics Data System (ADS)

Gulevich, D. R.; Koshelets, V. P.; Kusmartsev, F. V.

2017-07-01

We elaborate a theoretical description of large Josephson junctions which is based on Werthamer's microscopic tunneling theory. The model naturally incorporates coupling of electromagnetic radiation to the tunnel currents and, therefore, is particularly suitable for description of the self-coupling effect in Josephson junction. In our numerical calculations we treat the arising integro-differential equation, which describes temporal evolution of the superconducting phase difference coupled to the electromagnetic field, by the Odintsov-Semenov-Zorin algorithm. This allows us to avoid evaluation of the time integrals at each time step while taking into account all the memory effects. To validate the obtained microscopic model of large Josephson junction we focus our attention on the Josephson flux-flow oscillator. The proposed microscopic model of flux-flow oscillator does not involve the phenomenological damping parameter, rather the damping is taken into account naturally in the tunnel current amplitudes calculated at a given temperature. The theoretically calculated current-voltage characteristics is compared to our experimental results obtained for a set of fabricated flux-flow oscillators of different lengths.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers

PubMed Central

2016-01-01

Large-area tunneling junctions using eutectic Ga–In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga2O3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode–molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions. PMID:27738488

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

PubMed

Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

2014-11-17

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction

NASA Astrophysics Data System (ADS)

Raturi, Ashish; Choudhary, Sudhanshu

2016-11-01

First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spin-down channel. Tunnel magneto-resistance (TMR) of 100% is obtained at all bias voltages in MgO adsorbed graphene-based MTJ which is higher than that reported in pristine graphene-based MTJ. HMF electrodes were found suitable to achieve perfect spin filtration effect and high TMR. I-V characteristics for both parallel and antiparallel magnetization states of junction are calculated. High TMR suggests its usefulness in spin valves and other spintronics-based applications.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Rui; University of Chinese Academy of Sciences, Beijing 100049; Makise, Kazumasa

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{supmore » 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.« less

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

NASA Astrophysics Data System (ADS)

Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

NASA Astrophysics Data System (ADS)

Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

2018-05-01

Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

PubMed

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

PubMed Central

Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

2016-01-01

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy

PubMed Central

Jung, Suyong; Park, Minkyu; Park, Jaesung; Jeong, Tae-Young; Kim, Ho-Jong; Watanabe, Kenji; Taniguchi, Takashi; Ha, Dong Han; Hwang, Chanyong; Kim, Yong-Sung

2015-01-01

Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quality insulating material due to its large energy gap and chemical-mechanical stability. Here we present planar graphene/h-BN-heterostructure tunneling devices utilizing thin h-BN as a tunneling insulator. With much improved h-BN-tunneling-junction stability, we are able to probe all possible phonon modes of h-BN and graphite/graphene at Γ and K high symmetry points by inelastic tunneling spectroscopy. Additionally, we observe that low-frequency out-of-plane vibrations of h-BN and graphene lattices are significantly modified at heterostructure interfaces. Equipped with an external back gate, we can also detect high-order coupling phenomena between phonons and plasmons, demonstrating that h-BN-based tunneling device is a wonderful playground for investigating electron-phonon couplings in low-dimensional systems. PMID:26563740

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy.

PubMed

Jung, Suyong; Park, Minkyu; Park, Jaesung; Jeong, Tae-Young; Kim, Ho-Jong; Watanabe, Kenji; Taniguchi, Takashi; Ha, Dong Han; Hwang, Chanyong; Kim, Yong-Sung

2015-11-13

Inelastic electron tunneling spectroscopy is a powerful technique for investigating lattice dynamics of nanoscale systems including graphene and small molecules, but establishing a stable tunnel junction is considered as a major hurdle in expanding the scope of tunneling experiments. Hexagonal boron nitride is a pivotal component in two-dimensional Van der Waals heterostructures as a high-quality insulating material due to its large energy gap and chemical-mechanical stability. Here we present planar graphene/h-BN-heterostructure tunneling devices utilizing thin h-BN as a tunneling insulator. With much improved h-BN-tunneling-junction stability, we are able to probe all possible phonon modes of h-BN and graphite/graphene at Γ and K high symmetry points by inelastic tunneling spectroscopy. Additionally, we observe that low-frequency out-of-plane vibrations of h-BN and graphene lattices are significantly modified at heterostructure interfaces. Equipped with an external back gate, we can also detect high-order coupling phenomena between phonons and plasmons, demonstrating that h-BN-based tunneling device is a wonderful playground for investigating electron-phonon couplings in low-dimensional systems.

Common-path interference and oscillatory Zener tunneling in bilayer graphene p-n junctions

PubMed Central

Nandkishore, Rahul; Levitov, Leonid

2011-01-01

Interference and tunneling are two signature quantum effects that are often perceived as the yin and yang of quantum mechanics: a particle simultaneously propagating along several distinct classical paths versus a particle penetrating through a classically inaccessible region via a single least-action path. Here we demonstrate that the Dirac quasiparticles in graphene provide a dramatic departure from this paradigm. We show that Zener tunneling in gapped bilayer graphene, which governs transport through p-n heterojunctions, exhibits common-path interference that takes place under the tunnel barrier. Due to a symmetry peculiar to the gapped bilayer graphene bandstructure, interfering tunneling paths form conjugate pairs, giving rise to high-contrast oscillations in transmission as a function of the gate-tunable bandgap and other control parameters of the junction. The common-path interference is solely due to forward-propagating waves; in contrast to Fabry–Pérot-type interference in resonant-tunneling structures, it does not rely on multiple backscattering. The oscillations manifest themselves in the junction I–V characteristic as N-shaped branches with negative differential conductivity. The negative dI/dV, which arises solely due to under-barrier interference, can enable new high-speed active-circuit devices with architectures that are not available in electronic semiconductor devices. PMID:21825159

Advanced Undergraduate Laboratory Experiment in Inelastic Electron Tunneling Spectroscopy.

ERIC Educational Resources Information Center

White, H. W.; Graves, R. J.

1982-01-01

An advanced undergraduate laboratory experiment in inelastic electron tunneling spectroscopy is described. Tunnel junctions were fabricated, the tunneling spectra of several molecules absorbed on the surface of aluminum oxide measured, and mode assignments made for several of the prominent peaks in spectra using results obtained from optical…

Characterization of Magnetic Tunnel Junctions by IETS and STS

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo; Yang, See-Hun

2005-03-01

Inelastic electron tunneling spectroscopy (IETS) and superconducting tunneling spectroscopy (STS) have been employed to investigate spin-dependent tunneling in magnetic tunnel junctions (MTJs). MTJs were studied in which the ferromagnetic electrodes were formed from the 3d transition metals, Fe, Co and Ni and their alloys, and the tunnel barriers were formed from various nitrides and oxides including MgO. MTJs with MgO barriers exhibit more than 220% tunneling magnetoresistance (TMR) at room temperature[1]. IETS was used to measure the contributions of defects and impurities, as well as phonons and magnons, to the tunneling current. These processes give rise to conductance peaks at characteristic voltages according to their excitation energies. STS was used to measure the spin polarization of the tunneling current as well as to explore the role of spin-flip scattering in the tunneling process. The goal of this research is a more complete understanding of the mechanisms which gives rise to the bias voltage dependence of the TMR as well as indirect tunneling through states in the barrier. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. Rice, B. Hughes, M. Samant, and S.-H. Yang, Nature Materials, vol. Published online: 31 October 2004, 2004.

Correlational Effects of the Molecular-Tilt Configuration and the Intermolecular van der Waals Interaction on the Charge Transport in the Molecular Junction.

PubMed

Shin, Jaeho; Gu, Kyungyeol; Yang, Seunghoon; Lee, Chul-Ho; Lee, Takhee; Jang, Yun Hee; Wang, Gunuk

2018-06-25

Molecular conformation, intermolecular interaction, and electrode-molecule contacts greatly affect charge transport in molecular junctions and interfacial properties of organic devices by controlling the molecular orbital alignment. Here, we statistically investigated the charge transport in molecular junctions containing self-assembled oligophenylene molecules sandwiched between an Au probe tip and graphene according to various tip-loading forces ( F L ) that can control the molecular-tilt configuration and the van der Waals (vdW) interactions. In particular, the molecular junctions exhibited two distinct transport regimes according to the F L dependence (i.e., F L -dependent and F L -independent tunneling regimes). In addition, the charge-injection tunneling barriers at the junction interfaces are differently changed when the F L ≤ 20 nN. These features are associated to the correlation effects between the asymmetry-coupling factor (η), the molecular-tilt angle (θ), and the repulsive intermolecular vdW force ( F vdW ) on the molecular-tunneling barriers. A more-comprehensive understanding of these charge transport properties was thoroughly developed based on the density functional theory calculations in consideration of the molecular-tilt configuration and the repulsive vdW force between molecules.

Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube

NASA Astrophysics Data System (ADS)

Haruyama, Junji; Takesue, Izumi; Sato, Yuki

2000-10-01

We report on Coulomb blockade in a single tunnel junction directly connected to a multiwalled carbon nanotube (MWNT) by utilizing a nanoporous alumina film. The MWNT exhibits a weak localization effect with strong spin flip scattering. Experimental results and analysis suggest that a high-impedance external environment caused by the weak localization in the MWNT can yield Coulomb blockade, in accordance with phase correlation theory in a single junction system. It is also revealed that the Coulomb blockade is very sensitive to phase modulation in the MWNT, which also acts as a high-impedance transmission line.

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

PubMed

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Low-Energy Truly Random Number Generation with Superparamagnetic Tunnel Junctions for Unconventional Computing

NASA Astrophysics Data System (ADS)

Vodenicarevic, D.; Locatelli, N.; Mizrahi, A.; Friedman, J. S.; Vincent, A. F.; Romera, M.; Fukushima, A.; Yakushiji, K.; Kubota, H.; Yuasa, S.; Tiwari, S.; Grollier, J.; Querlioz, D.

2017-11-01

Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is prohibitive for these computing schemes. We introduce random number bit generation based on specific nanodevices: superparamagnetic tunnel junctions. We experimentally demonstrate high-quality random bit generation that represents an orders-of-magnitude improvement in energy efficiency over current solutions. We show that the random generation speed improves with nanodevice scaling, and we investigate the impact of temperature, magnetic field, and cross talk. Finally, we show how alternative computing schemes can be implemented using superparamagentic tunnel junctions as random number generators. These results open the way for fabricating efficient hardware computing devices leveraging stochasticity, and they highlight an alternative use for emerging nanodevices.

NIS tunnel junction as an x-ray photon sensor

NASA Astrophysics Data System (ADS)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

NASA Astrophysics Data System (ADS)

Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi; Yamashita, Kouji; Yagi, Kouta; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2013-08-01

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9 V at 50 mA with the optimized annealing condition.

Piezo-tunnel effect in Al/Al2O3/Al junctions elaborated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Rafael, R.; Puyoo, E.; Malhaire, C.

2017-11-01

In this work, the electrical transport in Al/Al2O3/Al junctions under mechanical stress is investigated in the perspective to use them as strain sensors. The metal/insulator/metal junctions are elaborated with a low temperature process (≤200 °C) fully compatible with CMOS back-end-of-line. The conduction mechanism in the structure is found to be Fowler-Nordheim tunneling, and efforts are made to extract the relevant physical parameters. Gauge factors up to -32.5 were found in the fabricated devices under tensile stress. Finally, theoretical mechanical considerations give strong evidence that strain sensitivity in Al/Al2O3/Al structures originates not only from geometrical deformations but also from the variation of interface barrier height and/or effective electronic mass in the tunneling oxide layer.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Magnetic nanostructures.

PubMed

Bennemann, K

2010-06-23

Characteristic results of magnetism in small particles, thin films and tunnel junctions are presented. As a consequence of the reduced atomic coordination in small clusters and thin films the electronic states and density of states are modified. Thus, magnetic moments and magnetization are affected. Generally, in clusters and thin films magnetic anisotropy plays a special role. In tunnel junctions the interplay of magnetism, spin currents and superconductivity are of particular interest. In ring-like mesoscopic systems Aharonov-Bohm-induced currents are studied. Results are given for single transition metal clusters, cluster ensembles, thin films, mesoscopic structures and tunnel systems. © 2010 IOP Publishing Ltd

Tunneling STM/STS and break-junction spectroscopy of the layered nitro-chloride superconductors MNCl (M = Ti, Hf, Zr)

NASA Astrophysics Data System (ADS)

Ekino, Toshikazu; Sugimoto, Akira; Gabovich, Alexander M.; Zheng, Zhanfeng; Zhang, Shuai; Yamanaka, Shoji

2014-05-01

The layered superconductors β-MNCl with the critical temperatures Tc = 14 K (M = Zr) - 25 K (M = Hf) were investigated by means of scanning-tunneling microscopy/spectroscopy and break-junction tunneling spectroscopy. The STM/STS was used to investigate the surface electronic structures in nanometer length scale, while the BJTS was employed to precisely determine the gap characteristics. Both techniques consistently clarified the unusually large size of the superconducting gap. Wide gap distributions with large-scale maximum gap values were also revealed in α-KyTiNCl with a different crystal structure.

Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.

2016-07-15

We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Resonant tunneling in graphene pseudomagnetic quantum dots.

PubMed

Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro

2013-06-12

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems

NASA Astrophysics Data System (ADS)

Wilson, B.; Atlas, M.; Lowell, P.; Moyerman, S.; Stebor, N.; Ullom, J.; Keating, B.

2014-08-01

Recent advances in Normal metal-insulator-superconductor (NIS) tunnel junctions (Clark et al. Appl Phys Lett 86: 173508, 2005, Appl Phys Lett 84: 4, 2004) have proven these devices to be a viable technology for sub-Kelvin refrigeration. NIS junction coolers, coupled to a separate cold stage, provide a flexible platform for cooling a wide range of user-supplied payloads. Recently, a stage was cooled from 290 to 256 mK (Lowell et al. Appl Phys Lett 102: 082601 2013), but further mechanical and electrical improvements are necessary for the stage to reach its full potential. We have designed and built a new Kevlar suspended cooling platform for NIS junction refrigeration that is both lightweight and well thermally isolated; the calculated parasitic loading is pW from 300 to 100 mK. The platform is structurally rigid with a measured deflection of 25 m under a 2.5 kg load and has an integrated mechanical heat switch driven by a superconducting stepper motor with thermal conductivity G W/K at 300 mK. An integrated radiation shield limits thermal loading and a modular platform accommodates enough junctions to provide nanowatts of continuous cooling power. The compact stage size of 7.6 cm 8.6 cm 4.8 cm and overall radiation shield size of 8.9 cm 10.0 cm 7.0 cm along with minimal electrical power requirements allow easy integration into a range of cryostats. We present the design, construction, and performance of this cooling platform as well as projections for coupling to arrays of NIS junctions and other future applications.

Size dependence in tunneling spectra of PbSe quantum-dot arrays.

PubMed

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.

Conductive atomic force microscopy measurements of nanopillar magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Evarts, E. R.; Hogg, C.; Bain, J. A.; Majetich, S. A.

2009-03-01

Magnetic tunnel junctions have been studied extensively for their magnetoresistance and potential uses in magnetic logic and data storage devices, but little is known about how their performance will scale with size. Here we examined the electronic behavior of 12 nm diameter magnetic tunnel junctions fabricated by a novel nanomasking process. Scanning electron microscopy images indicated feature diameter of 12 nm, and atomic force microscopy showed a height of 5 nm suggesting that unmasked regions have been milled on average to the oxide barrier layer, and areas should have the remnants of the free layer exposed with no remaining nanoparticle. Electrical contact was made to individual nanopillars using a doped-diamond-coated atomic force microscopy probe with a 40 nm radius of curvature at the tip. Off pillar we observed a resistance of 8.1 x 10^5 φ, while on pillar we found a resistance of 2.85 x 10^6 φ. Based on the RA product for this film, 120 φ-μm^2, a 12 nm diameter cylinder with perfect contact would have a resistance of 1.06 x 10^6 φ. The larger experimental value is consistent with a smaller contact area due to damaging the pillar during the ion milling process. The magnetoresistance characteristics of these magnetic tunnel junctions will be discussed.

Engineering double-well potentials with variable-width annular Josephson tunnel junctions

NASA Astrophysics Data System (ADS)

Monaco, Roberto

2016-11-01

Long Josephson tunnel junctions are non-linear transmission lines that allow propagation of current vortices (fluxons) and electromagnetic waves and are used in various applications within superconductive electronics. Recently, the Josephson vortex has been proposed as a new superconducting qubit. We describe a simple method to create a double-well potential for an individual fluxon trapped in a long elliptic annular Josephson tunnel junction characterized by an intrinsic non-uniform width. The distance between the potential wells and the height of the inter-well potential barrier are controlled by the strength of an in-plane magnetic field. The manipulation of the vortex states can be achieved by applying a proper current ramp across the junction. The read-out of the state is accomplished by measuring the vortex depinning current in a small magnetic field. An accurate one-dimensional sine-Gordon model for this strongly non-linear system is presented, from which we calculate the position-dependent fluxon rest-mass, its Hamiltonian density and the corresponding trajectories in the phase space. We examine the dependence of the potential properties on the annulus eccentricity and its electrical parameters and address the requirements for observing quantum-mechanical effects, as discrete energy levels and tunneling, in this two-state system.

Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

NASA Astrophysics Data System (ADS)

Valone, Thomas F.

2009-03-01

The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction cells are also considered for possible higher frequency ZPE transduction. Diode arrays of self-assembled molecular rectifiers or preferably, nano-sized cylindrical diodes are shown to reasonably provide for rectification of electron fluctuations from thermal and non-thermal ZPE sources to create an alternative energy DC electrical generator in the picowatt per diode range.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Fabrications of insulator-protected nanometer-sized electrode gaps

NASA Astrophysics Data System (ADS)

Arima, Akihide; Tsutsui, Makusu; Morikawa, Takanori; Yokota, Kazumichi; Taniguchi, Masateru

2014-03-01

We developed SiO2-coated mechanically controllable break junctions for accurate tunneling current measurements in an ionic solution. By breaking the junction, we created dielectric-protected Au nanoprobes with nanometer separation. We demonstrated that the insulator protection was capable to suppress the ionic contribution to the charge transport through the electrode gap, thereby enabled reliable characterizations of liquid-mediated exponential decay of the tunneling conductance in an electrolyte solution. From this, we found distinct roles of charge points such as molecular dipoles and ion species on the tunneling decay constant, which was attributed to local structures of molecules and ions in the confined space between the sensing electrodes. The device described here would provide improved biomolecular sensing capability of tunneling current sensors.

Identifying single bases in a DNA oligomer with electron tunnelling.

PubMed

Huang, Shuo; He, Jin; Chang, Shuai; Zhang, Peiming; Liang, Feng; Li, Shengqin; Tuchband, Michael; Fuhrmann, Alexander; Ros, Robert; Lindsay, Stuart

2010-12-01

It has been proposed that single molecules of DNA could be sequenced by measuring the physical properties of the bases as they pass through a nanopore. Theoretical calculations suggest that electron tunnelling can identify bases in single-stranded DNA without enzymatic processing, and it was recently experimentally shown that tunnelling can sense individual nucleotides and nucleosides. Here, we report that tunnelling electrodes functionalized with recognition reagents can identify a single base flanked by other bases in short DNA oligomers. The residence time of a single base in a recognition junction is on the order of a second, but pulling the DNA through the junction with a force of tens of piconewtons would yield reading speeds of tens of bases per second.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Quantum dot in interacting environments

NASA Astrophysics Data System (ADS)

Rylands, Colin; Andrei, Natan

2018-04-01

A quantum impurity attached to an interacting quantum wire gives rise to an array of new phenomena. Using the Bethe Ansatz we solve exactly models describing two geometries of a quantum dot coupled to an interacting quantum wire: a quantum dot that is (i) side coupled and (ii) embedded in a Luttinger liquid. We find the eigenstates and determine the spectrum through the Bethe Ansatz equations. Using this we derive exact expressions for the ground-state dot occupation. The thermodynamics are then studied using the thermodynamics Bethe Ansatz equations. It is shown that at low energies the dot becomes fully hybridized and acts as a backscattering impurity or tunnel junction depending on the geometry and furthermore that the two geometries are related by changing the sign of the interactions. Although remaining strongly coupled for all values of the interaction in the wire, there exists competition between the tunneling and backscattering leading to a suppression or enhancement of the dot occupation depending on the sign of the bulk interactions.

High Aspect Ratio Semiconductor Heterojunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Redwing, Joan; Mallouk, Tom; Mayer, Theresa

2013-05-17

The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematicmore » and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (V oc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion lengths. Furthermore, we made significant advances in employing the bottom-up vapor-liquid-solid (VLS) growth technique for the fabrication of the Si wire arrays. Our work elucidated the effects of growth conditions and substrate pattern geometry on the growth of large area Si microwire arrays grown with SiCl4. In addition, we also developed a process to grow p-type Si nanowire arrays using aluminum as the catalyst metal instead of gold. Finally, our work demonstrated the feasibility of growing vertical arrays of Si wires on non-crystalline glass substrates using polycrystalline Si template layers. The accomplishments demonstrated in this project will pave the way for future advances in radial junction wire array solar cells.« less

Characterization of the Aluminum-Oxide - Interface in Organic-Based Photoconductors by Electron Tunneling Spectroscopy.

NASA Astrophysics Data System (ADS)

Outzourhit, Abdelkader

In this study both the structure of the native oxide of the aluminum substrate and its electrical properties were investigated using electron tunneling spectroscopy which uses aluminum/aluminum oxide/lead tunnel junctions. It is found that the structure of the oxide as well as the barrier heights vary as a function of the preparation conditions. Room temperature oxidation in air or in the presence of small amounts of water vapor results in a disordered oxide, while glow discharge oxidation in an oxygen plasma leads to a more ordered oxide as evidenced by a sharp Al-O band in the inelastic electron tunneling (IET) spectra of as-grown tunnel junctions. In addition, the thermally oxidized junctions show a large barrier asymmetry (6.1 eV), which decrease as the humidity level is increased. These observations can be correlated with a change in the concentration, charge, and environment of the chemically adsorbed hydroxyl on the surface of the aluminum oxide. Tunneling studies of Hydroxy Squarylium (OHSq)- and PNDMA-doped tunnel junctions reveal the lowering of the effective barrier for electron tunneling as well as the barrier asymmetry in accordance with the modification of the charged hydroxyl groups at the surface of the oxide. IET spectra of these junctions support the Lewis-acid/Lewis-base type of interaction between the oxide surface and the adsorbed molecules. The ionization energy of the OHSq aggregates was measured to be 5.0 eV using the valence band XPS. This parameter was also evaluated from a simple Huckel molecular orbital theory applied to the dye molecule after taking into account the polarization energy. High dark decay rates are associated with low barrier for hole injection into the OHSq aggregates. Schottky emission is the primary cause of the dark decay at low voltages, while the Frenkel -Poole mechanism dominates the dark decay at higher voltages. The Lewis-acid/Lewis-base mechanism for the dark decay is not ruled out. Structural studies reveal the existence of silicon- and sodium-rich protrusions in the samples which show unacceptable dark decay rates. The protrusions can enhance the electric field within the photoconductor and thus lead to higher dark decay rates. (Abstract shortened with permission of author.).

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE PAGES

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius; ...

2017-08-14

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Modeling Bloch oscillations in ultra-small Josephson junctions

NASA Astrophysics Data System (ADS)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Room-temperature current blockade in atomically defined single-cluster junctions

NASA Astrophysics Data System (ADS)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Distributed Read-out Imaging Device array for astronomical observations in UV/VIS

NASA Astrophysics Data System (ADS)

Hijmering, Richard A.

2009-12-01

STJ (Superconducting Tunneling Junctions) are being developed as spectro-photometers in wavelengths ranging from the NIR to X-rays. 10x12 arrays of STJs have already been successfully used as optical imaging spectrometers with the S-Cam 3, on the William Hershel Telescope on La Palma and on the Optical Ground Station on Tenerife. To overcome the limited field of view which can be achieved with single STJ arrays, DROIDS (Distributed Read Out Imaging Devices) are being developed which produce next to energy and timing also produce positional information with each detector element. These DROIDS consist of a superconducting absorber strip with proximized STJs on either end. The STJs are a Ta/Al/AlOx/Al/Ta 100/30/1/30/100nm sandwich of which the bottom electrode Ta layer is one with the 100nm thick absorber layer. The ratio of the two signals from the STJs provides information on the absorption position and the sum signal is a measure for the energy of the absorbed photon. In this thesis we present different important processes which are involved with the detection of optical photons using DROIDs. This includes the spatial and spectral resolution, confinement of the quasiparticles in the proximized STJs to enhance tunnelling and quasiparticle creation resulting from absorption of a photon in the proximized STJ. We have combined our findings in the development of a 2D theoretical model which describes the diffusion of quasiparticles and imperfect confinement via exchange of quasiparticles between the absorber and STJ. Finally we will present some of the first results obtained with an array of 60 360x33.5 μm2 DROIDs in 3x20 format.

Very high-current-density Nb/AlN/Nb tunnel junctions for low-noise submillimeter mixers

NASA Astrophysics Data System (ADS)

Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

2000-04-01

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc≈30 kA cm-2). The junctions have low-resistance-area products (RNA≈5.6 Ω μm2), good subgap-to-normal resistance ratios Rsg/RN≈10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that ωRNC=1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlOx/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected double-sideband receiver noise temperature of TRX=110 K at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing rf loss in the tuning circuits.

Controlling destructive quantum interference in tunneling junctions comprising self-assembled monolayers via bond topology and functional groups† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c8sc00165k

PubMed Central

Zhang, Yanxi; Ye, Gang; Soni, Saurabh; Qiu, Xinkai; Krijger, Theodorus L.; Jonkman, Harry T.; Carlotti, Marco; Sauter, Eric; Zharnikov, Michael

2018-01-01

Quantum interference effects (QI) are of interest in nano-scale devices based on molecular tunneling junctions because they can affect conductance exponentially through minor structural changes. However, their utilization requires the prediction and deterministic control over the position and magnitude of QI features, which remains a significant challenge. In this context, we designed and synthesized three benzodithiophenes based molecular wires; one linearly-conjugated, one cross-conjugated and one cross-conjugated quinone. Using eutectic Ga–In (EGaIn) and CP-AFM, we compared them to a well-known anthraquinone in molecular junctions comprising self-assembled monolayers (SAMs). By combining density functional theory and transition voltage spectroscopy, we show that the presence of an interference feature and its position can be controlled independently by manipulating bond topology and electronegativity. This is the first study to separate these two parameters experimentally, demonstrating that the conductance of a tunneling junction depends on the position and depth of a QI feature, both of which can be controlled synthetically. PMID:29896382

Synchronization of a Josephson junction array in terms of global variables

NASA Astrophysics Data System (ADS)

Vlasov, Vladimir; Pikovsky, Arkady

2013-08-01

We consider an array of Josephson junctions with a common LCR load. Application of the Watanabe-Strogatz approach [Physica DPDNPDT0167-278910.1016/0167-2789(94)90196-1 74, 197 (1994)] allows us to formulate the dynamics of the array via the global variables only. For identical junctions this is a finite set of equations, analysis of which reveals the regions of bistability of the synchronous and asynchronous states. For disordered arrays with distributed parameters of the junctions, the problem is formulated as an integro-differential equation for the global variables; here stability of the asynchronous states and the properties of the transition synchrony-asynchrony are established numerically.

Electric field control of spin transfer torque in multiferroic tunnel junctions

NASA Astrophysics Data System (ADS)

Useinov, Artur; Kalitsov, Alan; Velev, Julian; Kioussis, Nicholas

2014-03-01

Based on model calculations we predict that the spin transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers can be strongly influenced by the saturated polarization of the barrier. The STT in such multiferroic tunnel junctions is calculated within the non-equilibrium Keldysh formalism generalized for non-collinear transport and implemented in the framework of a single-band tight-binding (TB) model. We calculate the bias dependence of both the in-plane (T∥) and out-of-plane (T⊥) components of STT as a function of the ferroelectric polarization (P) in the barrier. We find that the components of STT strongly depend on both the magnitude and the direction of the polarization. In particular switching of the polarization direction can dramatically alter the value of the STT and can even lead to a change of sign of T∥ and the voltage-induced part of T⊥. The effect is proportional to the magnitude of the polarization.

Broadband spectrally dynamic solid state illumination source

NASA Astrophysics Data System (ADS)

Nicol, David B.; Asghar, Ali; Gupta, Shalini; Kang, Hun; Pan, Ming; Strassburg, Martin; Summers, Chris; Ferguson, Ian T.

2006-06-01

Solid state lighting has done well recently in niche markets such as signage and displays, however, no available SSL technologies incorporate all the necessary attributes for general illumination. Development of a novel solid state general illumination source is discussed here. Two LEDs emitting at two distinct wavelengths can be monolithically grown and used to excite two or more phosphors with varied excitation spectra. The combined phosphorescence spectrum can then be controlled by adjusting the relative intensities of the two LED emissions. Preliminary phosphor analysis shows such a scheme to be viable for use in a spectrally dynamic broadband general illumination source. A tunnel junction is envisioned as a means of current spreading in a buried layer for three terminal operation. However, tunnel junction properties in GaN based materials are not well understood, and require further optimization to be practical devices. Preliminary results on GaN tunnel junctions are presented here as well.

Spin-transfer torque in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers

NASA Astrophysics Data System (ADS)

Velev, Julian P.; Merodio, Pablo; Pollack, Cesar; Kalitsov, Alan; Chshiev, Mairbek; Kioussis, Nicholas

2017-12-01

Using model calculations, we demonstrate a very high level of control of the spin-transfer torque (STT) by electric field in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers. We find that, for particular device parameters, toggling the polarization direction can switch the voltage-induced part of STT between a finite value and a value close to zero, i.e. quench and release the torque. Additionally, we demonstrate that under certain conditions the zero-voltage STT, i.e. the interlayer exchange coupling, can switch sign with polarization reversal, which is equivalent to reversing the magnetic ground state of the tunnel junction. This bias- and polarization-tunability of the STT could be exploited to engineer novel functionalities such as softening/hardening of the bit or increasing the signal-to-noise ratio in magnetic sensors, which can have important implications for magnetic random access memories or for combined memory and logic devices.

Imprint control of BaTiO 3 thin films via chemically induced surface polarization pinning

DOE PAGES

Lee, Hyungwoo; Kim, Tae Heon; Patzner, Jacob J.; ...

2016-02-22

Surface-adsorbed polar molecules can significantly alter the ferroelectric properties of oxide thin films. Thus, fundamental understanding and controlling the effect of surface adsorbates are crucial for the implementation of ferroelectric thin film devices, such as ferroelectric tunnel junctions. Herein, we report an imprint control of BaTiO 3 (BTO) thin films by chemically induced surface polarization pinning in the top few atomic layers of the water-exposed BTO films. Our studies based on synchrotron X-ray scattering and coherent Bragg rod analysis demonstrate that the chemically induced surface polarization is not switchable but reduces the polarization imprint and improves the bistability of ferroelectricmore » phase in BTO tunnel junctions. Here, we conclude that the chemical treatment of ferroelectric thin films with polar molecules may serve as a simple yet powerful strategy to enhance functional properties of ferroelectric tunnel junctions for their practical applications.« less

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

NASA Astrophysics Data System (ADS)

Neugebauer, S.; Hoffmann, M. P.; Witte, H.; Bläsing, J.; Dadgar, A.; Strittmatter, A.; Niermann, T.; Narodovitch, M.; Lehmann, M.

2017-03-01

We report on III-Nitride blue light emitting diodes (LEDs) comprising a GaN-based tunnel junction (TJ) all realized by metalorganic vapor phase epitaxy in a single growth process. The TJ grown atop the LED structures consists of a Mg-doped GaN layer and subsequently grown highly Ge-doped GaN. Long thermal annealing of 60 min at 800 °C is important to reduce the series resistance of the LEDs due to blockage of acceptor-passivating hydrogen diffusion through the n-type doped top layer. Secondary ion mass spectroscopy measurements reveal Mg-incorporation into the topmost GaN:Ge layer, implying a non-abrupt p-n tunnel junction and increased depletion width. Still, significantly improved lateral current spreading as compared to conventional semi-transparent Ni/Au p-contact metallization and consequently a more homogeneous electroluminescence distribution across 1 × 1 mm2 LED structures is achieved. Direct estimation of the depletion width is obtained from electron holography experiments, which allows for a discussion of the possible tunneling mechanism.

Tunneling anisotropic magnetoresistance in complex oxide tunnel junctions

NASA Astrophysics Data System (ADS)

Martínez, Benjamín; López-Mir, Laura; Galceran, Regina; Balcells, Lluis; Pomar, Alberto; Konstantinovic, Zorica; Sandiumenge, Felip; Frontera, Carlos; Advanced Characterization of Nanostructured Materials Team

The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/LaAlO3(LAO)/ Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H = 90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage. Finantial support from Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in R&D (SEV-2015-0496), and projects MAT2012-33207 and MAT2015-71664-R is acknowledged.

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions.

PubMed

Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

2016-12-14

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance, dI/dV, at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ≈ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, d 2 I/dV 2 , are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to "Coulomb diamonds" in the tunneling conductance.

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

NASA Technical Reports Server (NTRS)

Rahilly, W. P.

1980-01-01

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

A scanning tunneling microscope break junction method with continuous bias modulation.

PubMed

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Passive On-Chip Superconducting Circulator Using a Ring of Tunnel Junctions

NASA Astrophysics Data System (ADS)

Müller, Clemens; Guan, Shengwei; Vogt, Nicolas; Cole, Jared H.; Stace, Thomas M.

2018-05-01

We present the design of a passive, on-chip microwave circulator based on a ring of superconducting tunnel junctions. We investigate two distinct physical realizations, based on Josephson junctions (JJs) or quantum phase slip elements (QPS), with microwave ports coupled either capacitively (JJ) or inductively (QPS) to the ring structure. A constant bias applied to the center of the ring provides an effective symmetry breaking field, and no microwave or rf bias is required. We show that this design offers high isolation, robustness against fabrication imperfections and bias fluctuations, and a bandwidth in excess of 500 MHz for realistic device parameters.

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

PubMed Central

Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

2014-01-01

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices. PMID:25266219

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

PubMed Central

Sysoiev, Dmytro; Huhn, Thomas; Pauly, Fabian

2017-01-01

Diarylethene-derived molecules alter their electronic structure upon transformation between the open and closed forms of the diarylethene core, when exposed to ultraviolet (UV) or visible light. This transformation results in a significant variation of electrical conductance and vibrational properties of corresponding molecular junctions. We report here a combined experimental and theoretical analysis of charge transport through diarylethene-derived single-molecule devices, which are created using the mechanically controlled break-junction technique. Inelastic electron tunneling (IET) spectroscopy measurements performed at 4.2 K are compared with first-principles calculations in the two distinct forms of diarylethenes connected to gold electrodes. The combined approach clearly demonstrates that the IET spectra of single-molecule junctions show specific vibrational features that can be used to identify different isomeric molecular states by transport experiments. PMID:29259875

Effect of interfacial structures on spin dependent tunneling in epitaxial L1 0-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE PAGES

Yang, G.; Li, D. L.; Wang, S. G.; ...

2015-02-24

In this study, epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1 0-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Finally,more » both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn

2015-02-28

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominantmore » role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope.

PubMed

Wang, Fei; Clément, Nicolas; Ducatteau, Damien; Troadec, David; Tanbakuchi, Hassan; Legrand, Bernard; Dambrine, Gilles; Théron, Didier

2014-10-10

We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an 'on-chip' calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices.

Interconnected magnetic tunnel junctions for spin-logic applications

NASA Astrophysics Data System (ADS)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

Effect of gamma-ray irradiation on the surface states of MOS tunnel junctions

NASA Technical Reports Server (NTRS)

Ma, T. P.; Barker, R. C.

1974-01-01

Gamma-ray irradiation with doses up to 8 megarad produces no significant change on either the C(V) or the G(V) characteristics of MOS tunnel junctions with intermediate oxide thicknesses (40-60 A), whereas the expected flat-band shift toward negative electrode voltages occurs in control thick oxide capacitors. A simple tunneling model would explain the results if the radiation-generated hole traps are assumed to lie below the valence band of the silicon. The experiments also suggest that the observed radiation-generated interface states in conventional MOS devices are not due to the radiation damage of the silicon surface.

Probing the Inelastic Interactions in Molecular Junctions by Scanning Tunneling Microscope

NASA Astrophysics Data System (ADS)

Xu, Chen

With a sub-Kelvin scanning tunneling microscope, the energy resolution of spectroscopy is improved dramatically. Detailed studies of finer features of spectrum become possible. The asymmetry in the line shape of carbon monoxide vibrational spectra is observed to correlate with the couplings of the molecule to the tip and substrates. The spin-vibronic coupling in the molecular junctions is revisited with two metal phthalocyanine molecules, unveiling sharp spin-vibronic peaks. Finally, thanks to the improved spectrum resolution, the bonding structure of the acyclic compounds molecules is surveyed with STM inelastic tunneling probe, expanding the capability of the innovative high resolution imaging technique.

Device Modeling and Characterization for CIGS Solar Cells

NASA Astrophysics Data System (ADS)

Song, Sang Ho

We studied the way to achieve high efficiency and low cost of CuIn1-xGaxSe2 (CIGS) solar cells. The Fowler-Nordheim (F-N) tunneling currents at low bias decreased the shunt resistances and degraded the fill factor and efficiency. The activation energies of majority traps were directly related with F-N tunneling currents by the energy barriers. Air anneals decreased the efficiency from 7.74% to 5.18% after a 150 °C, 1000 hour anneal. The decrease of shunt resistance due to F-N tunneling and the increase of series resistance degrade the efficiencies of solar cells. Air anneal reduces the free carrier densities by the newly generated Cu interstitial defects (Cui). Mobile Cui defects induce the metastability in CIGS solar cell. Since oxygen atoms are preferred to passivate the Se vacancies thus Cu interstitial defects explains well metastability of CIGS solar cells. Lattice mismatch and misfit stress between layers in CIGS solar cells can explain the particular effects of CIGS solar cells. The misfits of 35.08° rotated (220/204) CIGS to r-plane (102) MoSe2 layers are 1% ˜ -4% lower than other orientation and the lattice constants of two layers in short direction are matched at Ga composition x=0.35. This explains well the preferred orientation and the maximum efficiency of Ga composition effects. Misfit between CIGS and CdS generated the dislocations in CdS layer as the interface traps. Thermionic emission currents due to interface traps limit the open circuit voltage at high Ga composition. The trap densities were calculated by critical thickness and dislocation spacing and the numerical device simulation results were well matched with the experimental results. A metal oxide broken-gap p-n heterojunction is suggested for tunnel junction for multi-junction polycrystalline solar cells and we examined the characteristics of broken-gap tunnel junction by numerical simulation. Ballistic transport mechanism explains well I-V characteristics of broken-gap junction. P-type Cu2O and n-type In2O3 broken-gap heterojunction is effective with the CIGS tandem solar cells. The junction has linear I-V characteristics with moderate carrier concentration (2x1017 cm-3) and the resistance is lower than GaAs tunnel junction. The efficiency of a CGS/CIS tandem solar cells was 24.1% with buffer layers. And no significant degradations are expected due to broken gap junction.

Length-dependent transport in molecular junctions based on SAMs of alkanethiols and alkanedithiols: effect of metal work function and applied bias on tunneling efficiency and contact resistance.

PubMed

Engelkes, Vincent B; Beebe, Jeremy M; Frisbie, C Daniel

2004-11-03

Nanoscopic tunnel junctions were formed by contacting Au-, Pt-, or Ag-coated atomic force microscopy (AFM) tips to self-assembled monolayers (SAMs) of alkanethiol or alkanedithiol molecules on polycrystalline Au, Pt, or Ag substrates. Current-voltage traces exhibited sigmoidal behavior and an exponential attenuation with molecular length, characteristic of nonresonant tunneling. The length-dependent decay parameter, beta, was found to be approximately 1.1 per carbon atom (C(-1)) or 0.88 A(-)(1) and was independent of applied bias (over a voltage range of +/-1.5 V) and electrode work function. In contrast, the contact resistance, R(0), extrapolated from resistance versus molecular length plots showed a notable decrease with both applied bias and increasing electrode work function. The doubly bound alkanedithiol junctions were observed to have a contact resistance approximately 1 to 2 orders of magnitude lower than the singly bound alkanethiol junctions. However, both alkanethiol and dithiol junctions exhibited the same length dependence (beta value). The resistance versus length data were also used to calculate transmission values for each type of contact (e.g., Au-S-C, Au/CH(3), etc.) and the transmission per C-C bond (T(C)(-)()(C)).

Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

NASA Astrophysics Data System (ADS)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2018-01-01

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

Force and light tuning vertical tunneling current in the atomic layered MoS2.

PubMed

Li, Feng; Lu, Zhixing; Lan, Yann-Wen; Jiao, Liying; Xu, Minxuan; Zhu, Xiaoyang; Zhang, Xiankun; Wu, Hualin; Qi, Junjie

2018-07-06

In this work, the vertical electrical transport behavior of bilayer MoS 2 under the coupling of force and light was explored by the use of conductive atomic force microscopy. We found that the current-voltage behavior across the tip-MoS 2 -Pt junction is a tunneling current that can be well fitted by a Simmons approximation. The transport behavior is direct tunneling at low bias and Fowler-Nordheim tunneling at high bias, and the transition voltage and tunnel barrier height are extracted. The effect of force and light on the effective band gap of the junction is investigated. Furthermore, the source-drain current drops surprisingly when we continually increase the force, and the dropping point is altered by the provided light. This mechanism is responsible for the tuning of tunneling barrier height and width by force and light. These results provide a new way to design devices that take advantage of ultrathin two-dimensional materials. Ultrashort channel length electronic components that possess tunneling current are important for establishing high-efficiency electronic and optoelectronic systems.

Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galbiati, Marta; Tatay, Sergio; Delprat, Sophie

2015-02-23

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffusemore » through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.« less

Gate-controlled tunneling of quantum Hall edge states in bilayer graphene

NASA Astrophysics Data System (ADS)

Zhu, Jun; Li, Jing; Wen, Hua

Controlled tunneling of integer and fractional quantum Hall edge states provides a powerful tool to probe the physics of 1D systems and exotic particle statistics. Experiments in GaAs 2DEGs employ either a quantum point contact or a line junction tunnel barrier. It is generally difficult to independently control the filling factors νL and νR on the two sides of the barrier. Here we show that in bilayer graphene both νL and νR as well as their Landau level structures can be independently controlled using a dual-split-gate structure. In addition, the height of the line-junction tunnel barrier implemented in our experiments is tunable via a 5th gate. By measuring the tunneling resistance across the junction RT we examine the equilibration of the edge states in a variety of νL/νR scenarios and under different barrier heights. Edge states from both sides are fully mixed in the case of a low barrier. As the barrier height increases, we observe plateaus in RT that correspond to sequential complete backscattering of edge states. Gate-controlled manipulation of edge states offers a new angle to the exploration of quantum Hall magnetism and fractional quantum Hall effect in bilayer graphene.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T.; Nikitin, V.

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axismore » (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.« less

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

NASA Technical Reports Server (NTRS)

Bell, L. D.; Kaiser, W. J.; Hecht, M. H.; Grunthaner, F. J.

1988-01-01

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Highly strain-sensitive magnetostrictive tunnel magnetoresistance junctions

NASA Astrophysics Data System (ADS)

Tavassolizadeh, Ali; Hayes, Patrick; Rott, Karsten; Reiss, Günter; Quandt, Eckhard; Meyners, Dirk

2015-06-01

Tunnel magnetoresistance (TMR) junctions with CoFeB/MgO/CoFeB layers are promising for strain sensing applications due to their high TMR effect and magnetostrictive sense layer (CoFeB). TMR junctions available even in submicron dimensions can serve as strain sensors for microelectromechanical systems devices. Upon stress application, the magnetization configuration of such junctions changes due to the inverse magnetostriction effect resulting in strain-sensitive tunnel resistance. Here, strain sensitivity of round-shaped junctions with diameters of 11.3 μm, 19.2 μm, 30.5 μm, and 41.8 μm were investigated on macroscopic cantilevers using a four-point bending apparatus. This investigation mainly focuses on changes in hard-axis TMR loops caused by the stress-induced anisotropy. A macrospin model is proposed, supported by micromagnetic simulations, which describes the complete rotation of the sense layer magnetization within TMR loops of junctions, exposed to high stress. Below 0.2‰ tensile strain, a representative junction with 30.5 μm diameter exhibits a very large gauge factor of 2150. For such high gauge factor a bias field H = - 3.2 kA / m is applied in an angle equal to 3 π / 2 toward the pinned magnetization of the reference layer. The strain sensitivity strongly depends on the bias field. Applying stress along π / 4 against the induced magnetocrystalline anisotropy, both compressive and tensile strain can be identified by a unique sensor. More importantly, a configuration with a gauge factor of 400 at zero bias field is developed which results in a straightforward and compact measuring setup.

High voltage series connected tandem junction solar battery

DOEpatents

Hanak, Joseph J.

1982-01-01

A high voltage series connected tandem junction solar battery which comprises a plurality of strips of tandem junction solar cells of hydrogenated amorphous silicon having one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon, arranged in a tandem configuration, can have the same bandgap or differing bandgaps. The tandem junction strip solar cells are series connected to produce a solar battery of any desired voltage.

Defining the value of injection current and effective electrical contact area for EGaIn-based molecular tunneling junctions.

PubMed

Simeone, Felice C; Yoon, Hyo Jae; Thuo, Martin M; Barber, Jabulani R; Smith, Barbara; Whitesides, George M

2013-12-04

Analysis of rates of tunneling across self-assembled monolayers (SAMs) of n-alkanethiolates SCn (with n = number of carbon atoms) incorporated in junctions having structure Ag(TS)-SAM//Ga2O3/EGaIn leads to a value for the injection tunnel current density J0 (i.e., the current flowing through an ideal junction with n = 0) of 10(3.6±0.3) A·cm(-2) (V = +0.5 V). This estimation of J0 does not involve an extrapolation in length, because it was possible to measure current densities across SAMs over the range of lengths n = 1-18. This value of J0 is estimated under the assumption that values of the geometrical contact area equal the values of the effective electrical contact area. Detailed experimental analysis, however, indicates that the roughness of the Ga2O3 layer, and that of the Ag(TS)-SAM, determine values of the effective electrical contact area that are ~10(-4) the corresponding values of the geometrical contact area. Conversion of the values of geometrical contact area into the corresponding values of effective electrical contact area results in J0(+0.5 V) = 10(7.6±0.8) A·cm(-2), which is compatible with values reported for junctions using top-electrodes of evaporated Au, and graphene, and also comparable with values of J0 estimated from tunneling through single molecules. For these EGaIn-based junctions, the value of the tunneling decay factor β (β = 0.75 ± 0.02 Å(-1); β = 0.92 ± 0.02 nC(-1)) falls within the consensus range across different types of junctions (β = 0.73-0.89 Å(-1); β = 0.9-1.1 nC(-1)). A comparison of the characteristics of conical Ga2O3/EGaIn tips with the characteristics of other top-electrodes suggests that the EGaIn-based electrodes provide a particularly attractive technology for physical-organic studies of charge transport across SAMs.

Structural details of Al/Al 2O3 junctions and their role in the formation of electron tunnel barriers

NASA Astrophysics Data System (ADS)

Koberidze, M.; Puska, M. J.; Nieminen, R. M.

2018-05-01

We present a computational study of the adhesive and structural properties of the Al/Al 2O3 interfaces as building blocks of the metal-insulator-metal (MIM) tunnel devices, where electron transport is accomplished via tunneling mechanism through the sandwiched insulating barrier. The main goal of this paper is to understand, on the atomic scale, the role of the geometrical details in the formation of the tunnel barrier profiles. Initially, we concentrate on the adhesive properties of the interfaces. To provide reliable results, we carefully assess the accuracy of the traditional methods used to examine Al/Al 2O3 systems. These are the most widely employed exchange-correlation functionals—local-density approximation and two different generalized gradient approximations; the universal binding-energy relation for predicting equilibrium interfacial distances and adhesion energies; and the ideal work of separation as a measure of junction stability. In addition, we show that the established interpretation of the computed ideal work of separation might be misleading in predicting the optimal interface structures. Finally, we perform a detailed analysis of the atomic and interplanar relaxations in each junction, and identify their contributions to the tunnel barrier parameters. Our results imply that the structural irregularities on the surface of the Al film have a significant contribution to lowering the tunnel barrier height, while atomic relaxations at the interface and interplanar relaxations in Al2O3 may considerably change the width of the barrier and, thus, distort its uniformity. Both the effects may critically influence the performance of the MIM tunnel devices.

A 547 GHz SIS Receiver Employing a Submicron Nb Junction with an Integrated Matching Circuit

NASA Technical Reports Server (NTRS)

Febvre, P.; McGrath, W.; Leduc, H.; Batelaan, P.; Frerking, M.; Hernichel, J.; Bumble, B.

1993-01-01

The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor (SIS) tunnel junctions as the nonlinear mixing element.

Photon statistics of shot noise measured using a Josephson parametric amplifier

NASA Astrophysics Data System (ADS)

Simoneau, Jean Olivier; Virally, Stéphane; Lupien, Christian; Reulet, Bertrand

2015-03-01

Quantum measurements are very sensitive to external noise sources. Such measurements require careful amplification chain design so as not to overwhelm the signal with extraneous noise. A quantum-limited amplifier, like the Josephson parametric amplifier (paramp), is thus an ideal candidate for this purpose. We used a paramp to investigate the quantum noise of a tunnel junction. This measurement scheme allowed us to improve upon previous observations of shot noise by an order of magnitude in terms of noise temperature. With this setup, we have measured the second and fourth cumulants of current fluctuations generated by the tunnel junction within a 40 MHz bandwidth around 6 GHz. From theses measurements, we deduce the variance of the photon number fluctuations for various bias schemes of the junction. In particular, we investigate the regime where the junction emits pairs of photons.

Heusler Alloyed Electrodes Integrated in Magnetic Tunnel-Junctions

NASA Astrophysics Data System (ADS)

Hütten, Andreas; Kämmerer, Sven; Schmalhorst, Jan; Reiss, Günter

As a consequence of the growing theoretically predictions of 100% spin polarized half- and full-Heusler compounds over the past 6 years, Heusler alloys are among the most promising materials class for future magnetoelectronic and spintronic applications. We have integrated Co2MnSi as a representative of the full-Heusler compound family as one magnetic electrode into technological relevant magnetic tunnel junctions. The resulting tunnel magnetoresistance at 20 K was determined to be 95% corresponding to a Co2MnSi spin polarization of 66% in combination with an AlOx barrier thickness of 1.8 nm. For magnetic tunnel junctions prepared with an initially larger Al layer prior to oxidation the tunnel magnetoresistance at 20 K increases to about 108% associated with a Co2MnSi spin polarization of 72% clearly proving that Co2MnSi is already superior to 3d-based magnetic elements or their alloys. The corresponding room temperature values of the tunnel magnetoresistance are 33% and 41%, respectively. Structural and magnetic properties of the Co2MnSi AlOx - barrier interface have been studied with X-ray diffraction, electron and X-ray absorption spectroscopy and X-ray magnetic circular dichroism and it is shown that the ferromagnetic order of Mn and Co spins at this interface is only induced in optimally annealed Co2MnSi layer. The underlying atomic ordering mechanism responsible for achieving about its theoretical magnetic moment could be assigned to the elimination of Co-Si antisite defects whereas the reduction of Co-Mn antisite defects results in large tunnel magnetoresistance. The presence of a step like tunnel barrier which is already created during plasma oxidation while preparing the AlOx tunnel barrier has been identified as the current limitation to achieve larger tunnel magnetoresistance and hence larger spin polarization and is a direct consequence of the oxygen affinity of the Co2MnSi - Heusler elements Mn and Si.

Valley-selective Landau-Zener oscillations in semi-Dirac p -n junctions

NASA Astrophysics Data System (ADS)

Saha, K.; Nandkishore, R.; Parameswaran, S. A.

2017-07-01

We study transport across p -n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties—relevant to materials such as TiO2/VO2 multilayers and α -(BEDT-TTF)2I3 salts—continuously interpolate between those of mono- and bilayer graphene as a function of propagation angle. We demonstrate that tunneling across the junction depends on the orientation of the tunnel barrier relative to the crystalline axes, leading to strongly nonmonotonic current-voltage characteristics, including negative differential conductance in some regimes. In multivalley systems, these features provide a natural route to engineering valley-selective transport.

Quarter-flux Hofstadter lattice in a qubit-compatible microwave cavity array

NASA Astrophysics Data System (ADS)

Owens, Clai; LaChapelle, Aman; Saxberg, Brendan; Anderson, Brandon M.; Ma, Ruichao; Simon, Jonathan; Schuster, David I.

2018-01-01

Topological and strongly correlated materials are exciting frontiers in condensed-matter physics, married prominently in studies of the fractional quantum Hall effect [H. L. Stormer et al., Rev. Mod. Phys. 71, S298 (1999), 10.1103/RevModPhys.71.S298], There is an active effort to develop synthetic materials where the microscopic dynamics and ordering arising from the interplay of topology and interaction may be directly explored. In this work, we demonstrate an architecture for exploration of topological matter constructed from tunnel-coupled, time-reversal-broken microwave cavities that are both low loss and compatible with Josephson-junction-mediated interactions [A. Wallraff et al., Nature (London) 431, 162 (2004), 10.1038/nature02851]. Following our proposed protocol [B. M. Anderson et al., Phys. Rev. X 6, 041043 (2016), 10.1103/PhysRevX.6.041043], we implement a square lattice Hofstadter model at a quarter flux per plaquette (α =1 /4 ), with time-reversal symmetry broken through the chiral Wannier orbital of resonators coupled to yttrium-iron-garnet spheres. We demonstrate site-resolved spectroscopy of the lattice, time-resolved dynamics of its edge channels, and a direct measurement of the dispersion of the edge channels. Finally, we demonstrate the flexibility of the approach by erecting a tunnel barrier and investigating dynamics across it. With the introduction of Josephson junctions to mediate interactions between photons, this platform is poised to explore strongly correlated topological quantum science in a synthetic system.

Identification of microorganisms using superconducting tunnel junctions and time-of-flight mass spectrometry

NASA Astrophysics Data System (ADS)

Ullom, J. N.; Frank, M.; Horn, J. M.; Labov, S. E.; Langry, K.; Benner, W. H.

2000-04-01

We present time-of-flight measurements of biological material ejected from bacterial spores following laser irradiation. Ion impacts are registered on a microchannel plate detector and on a Superconducting Tunnel Junction (STJ) detector. We compare mass spectra obtained with the two detectors. The STJ has better sensitivity to massive ions and also measures the energy of each ion. We show evidence that spores of different bacillus species produce distinctive mass spectra and associate the observed mass peaks with coat proteins.

Harmonic mixing characteristics of metal-barrier-metal junctions as predicted by electron tunneling

NASA Technical Reports Server (NTRS)

Faris, S. M.; Gustafson, T. K.

1974-01-01

The bias dependence of the nonlinear mixing characteristics of metal-barrier-metal junction currents is deduced assuming an electron tunneling model. The difference-frequency beat voltage at frequency omega sub 1 - (n x omega sub 2), when n is an integer and omega sub 1 and omega sub 2 are the assumed frequencies of two induced currents, is found to have n zeros as the diode bias is varied. Recent experimental observations have demonstrated such characteristics.

Limitations in cooling electrons using normal-metal-superconductor tunnel junctions.

PubMed

Pekola, J P; Heikkilä, T T; Savin, A M; Flyktman, J T; Giazotto, F; Hekking, F W J

2004-02-06

We demonstrate both theoretically and experimentally two limiting factors in cooling electrons using biased tunnel junctions to extract heat from a normal metal into a superconductor. First, when the injection rate of electrons exceeds the internal relaxation rate in the metal to be cooled, the electrons do not obey the Fermi-Dirac distribution, and the concept of temperature cannot be applied as such. Second, at low bath temperatures, states within the gap induce anomalous heating and yield a theoretical limit of the achievable minimum temperature.

Fabrication of Josephson Tunnel Junctions by Reactive Ion Milling.

DTIC Science & Technology

1980-07-21

the existence of numerous oxide phases. in addition to Vb2 05 , which is the desired tunneling barrier, NbO2 , NbO, and various suboxides can form, as...interface between Nb and Vb2 0 5 in therally grown oxide films consists of RHO and RHO 2 , and poor Junction quality has been attrib- uted to such...are believed to be important in rf plasma oxidation (3), but they are not extracted by the grids of the ion mill. Beats of formation of posLtive

Spectroscopic measurement of spin-dependent resonant tunneling through a 3D disorder: the case of MnAs/GaAs/MnAs junctions.

PubMed

Garcia, V; Jaffrès, H; George, J-M; Marangolo, M; Eddrief, M; Etgens, V H

2006-12-15

We propose an analytical model of spin-dependent resonant tunneling through a 3D assembly of localized states (spread out in energy and in space) in a barrier. An inhomogeneous distribution of localized states leads to resonant tunneling magnetoresistance inversion and asymmetric bias dependence as evidenced with a set of experiments with MnAs/GaAs(7-10 nm)/MnAs tunnel junctions. One of the key parameters of our theory is a dimensionless critical exponent beta scaling the typical extension of the localized states over the characteristic length scale of the spatial distribution function. Furthermore, we demonstrate, through experiments with localized states introduced preferentially in the middle of the barrier, the influence of an homogeneous distribution on the spin-dependent transport properties.

Tunneling transport of mono- and few-layers magnetic van der Waals MnPS3

NASA Astrophysics Data System (ADS)

Lee, Sungmin; Choi, Ki-Young; Lee, Sangik; Park, Bae Ho; Park, Je-Geun; Emergent Phenomena Group Team; Department of Physics, Konkuk University Collaboration

We have investigated the tunneling transport of mono- and few-layers of MnPS3 by using conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottky junction and Fowler-Nordheim tunneling (FNT) were observed for all the samples with varying thickness. Using the FNT model and assuming the effective electron mass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eV and the dielectric breakdown strength as 5.41 MV/cm. The work at the IBS CCES was supported by the research program of Institute for Basic Science. S.L. and B.H.P were supported by the National Research Foundation of Korea (NRF) Grants funded by the Korea government (MSIP).

Measurements of quasiparticle tunneling dynamics in a band-gap-engineered transmon qubit.

PubMed

Sun, L; DiCarlo, L; Reed, M D; Catelani, G; Bishop, Lev S; Schuster, D I; Johnson, B R; Yang, Ge A; Frunzio, L; Glazman, L; Devoret, M H; Schoelkopf, R J

2012-06-08

We have engineered the band gap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time T1 of the qubits is shown to be insensitive to this band gap engineering. Operating at relatively low-E(J)/E(C) makes the transmon transition frequency distinctly dependent on the charge parity, allowing us to detect the quasiparticles tunneling across the qubit junction. Quasiparticle kinetics have been studied by monitoring the frequency switching due to even-odd parity change in real time. It shows the switching time is faster than 10  μs, indicating quasiparticle-induced relaxation has to be reduced to achieve T1 much longer than 100  μs.

Controlling dynamical entanglement in a Josephson tunneling junction

NASA Astrophysics Data System (ADS)

Ziegler, K.

2017-12-01

We analyze the evolution of an entangled many-body state in a Josephson tunneling junction and its dependence on the number of bosons and interaction strength. A N00N state, which is a superposition of two complementary Fock states, appears in the evolution with sufficient probability only for a moderate many-body interaction on an intermediate time scale. This time scale is inversely proportional to the tunneling rate. Many-body interaction strongly supports entanglement: The probability for creating an entangled state decays exponentially with the number of particles without many-body interaction, whereas it decays only like the inverse square root of the number of particles in the presence of many-body interaction.

Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions.

PubMed

Song, Yang; Dery, Hanan

2014-07-25

We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.; Åkerman, Johan; Muduli, P. K.

2018-01-01

We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

A thin polymer insulator for Josephson tunneling applications

NASA Technical Reports Server (NTRS)

Wilmsen, C. M.

1973-01-01

The use of an organic monolayer formed from a vapor as an insulating barrier for thin film Josephson junctions is considered, and the effect of an organic monolayer on the transition temperature of a thin film superconductor is investigated. Also analyzed are the geometric factors which influence Josephson junctions and Josephson junction interferometers.

Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers

NASA Technical Reports Server (NTRS)

Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

2000-01-01

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.

Precision measurement with an optical Josephson junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, H. T.; Burnett, K.; Dunningham, J. A.

2007-06-15

We present a theoretical study of a type of Josephson device, the so-called 'optical Josephson junction' [Y. Shin et al. Phys. Rev. Lett. 95, 170402 (2005).]. In this device, two condensates are optically coupled through a waveguide by a pair of Bragg beams. This optical Josephson junction differs from the usual Josephson junction where condensates are weakly coupled by tunneling through a barrier. We discuss the use of this optical Josephson junction, for making precision measurements.

Superconducting Quantum Interference Devices for the Detection of Magnetic Flux and Application to Airborne High Frequency Direction Finding

DTIC Science & Technology

2015-03-26

junction [29]. • The Resistively-Shunted- Junction (RSJ) Model • The Tunnel - Junction -Microscopic (TJM) Model • The Nonlinear...Resistive (RSJN) Model These circuit representations describe the junction using a parallel configuration of a resistor, noise current source, and a...solution for the Josephson junction IVP model equation for the noise -free case, in = 0. The thermal noise current is set to zero to exclude noise

Normal metal - insulator - superconductor thermometers and coolers with titanium-gold bilayer as the normal metal

NASA Astrophysics Data System (ADS)

Räisänen, I. M. W.; Geng, Z.; Kinnunen, K. M.; Maasilta, I. J.

2018-03-01

We have fabricated superconductor - insulator - normal metal - insulator - superconductor (SINIS) tunnel junctions in which Al acts as the superconductor, AlOx is the insulator, and the normal metal consists of a thin Ti layer (5 nm) covered with a thicker Au layer (40 nm). We have characterized the junctions by measuring their current-voltage curves between 60 mK and 750 mK. For comparison, the same measurements have been performed for a SINIS junction pair whose normal metal is Cu. The Ti-Au bilayer decreases the SINIS tunneling resistance by an order of magnitude compared to junctions where Cu is used as normal metal, made with the same oxidation parameters. The Ti-Au devices are much more robust against chemical attacks, and their lower tunneling resistance makes them more robust against static charge. More significantly, they exhibit significantly stronger electron cooling than Cu devices with identical fabrication steps, when biased close to the energy gap of the superconducting Al. By using a self-consistent thermal model, we can fit the current-voltage characteristics well, and show an electron cooling from 200 mK to 110 mK, with a non-optimized device.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Octonary resistance states in La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 multiferroic tunnel junctions

DOE PAGES

Yue -Wei Yin; Tao, Jing; Huang, Wei -Chuan; ...

2015-10-06

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La 0.7Sr 0.3MnO 3/BaTiO 3/La 0.7Sr 0.3MnO 3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ showsmore » at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO 3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.« less

Insights into Solid-State Electron Transport through Proteins from Inelastic Tunneling Spectroscopy: The Case of Azurin.

PubMed

Yu, Xi; Lovrincic, Robert; Sepunaru, Lior; Li, Wenjie; Vilan, Ayelet; Pecht, Israel; Sheves, Mordechai; Cahen, David

2015-10-27

Surprisingly efficient solid-state electron transport has recently been demonstrated through "dry" proteins (with only structural, tightly bound H2O left), suggesting proteins as promising candidates for molecular (bio)electronics. Using inelastic electron tunneling spectroscopy (IETS), we explored electron-phonon interaction in metal/protein/metal junctions, to help understand solid-state electronic transport across the redox protein azurin. To that end an oriented azurin monolayer on Au is contacted by soft Au electrodes. Characteristic vibrational modes of amide and amino acid side groups as well as of the azurin-electrode contact were observed, revealing the azurin native conformation in the junction and the critical role of side groups in the charge transport. The lack of abrupt changes in the conductance and the line shape of IETS point to far off-resonance tunneling as the dominant transport mechanism across azurin, in line with previously reported (and herein confirmed) azurin junctions. The inelastic current and hence electron-phonon interaction appear to be rather weak and comparable in magnitude with the inelastic fraction of tunneling current via alkyl chains, which may reflect the known structural rigidity of azurin.

L1 0 Fe -Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Zhang, De-Lin; Sun, Congli; Lv, Yang; Schliep, Karl B.; Zhao, Zhengyang; Chen, Jun-Yang; Voyles, Paul M.; Wang, Jian-Ping

2018-04-01

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe -Pd /Ru /Fe -Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L1 0 Fe -Pd PSAFM structure shows a large bulk PMA (Ku˜10.2 Merg /cm3 ) and strong antiferromagnetic coupling (-JIEC˜2.60 erg /cm2 ). Full perpendicular magnetic tunnel junctions (PMTJs) with a L1 0 Fe -Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C . Exhibiting high thermal stabilities and large Ku , the bulk PMTJs with an L1 0 Fe -Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.

Correlating quantum decoherence and material defects in a Josephson qubit

NASA Astrophysics Data System (ADS)

Hite, D. A.; McDermott, R.; Simmonds, R. W.; Cooper, K. B.; Steffen, M.; Nam, S.; Pappas, D. P.; Martinis, J. M.

2004-03-01

Superconducting tunnel junction devices are promising candidates for constructing quantum bits (qubits) for quantum computation because of their inherently low dissipation and ease of scalability by microfabrication. Recently, the Josephson phase qubit has been characterized spectroscopically as having spurious microwave resonators that couple to the qubit and act as a dominant source of decoherence. While the origin of these spurious resonances remains unknown, experimental evidence points to the material system of the tunnel barrier. Here, we focus on our materials research aimed at elucidating and eliminating these spurious resonators. In particular, we have studied the use of high quality Al films epitaxially grown on Si(111) as the base electrode of the tunnel junction. During each step in the Al/AlOx/Al trilayer growth, we have investigated the structure in situ by AES, AED and LEED. While tunnel junctions fabricated with these epitaxial base electrodes prove to be of non-uniform oxide thickness and too thin, I-V characteristics have shown a lowering of subgap currents by a factor of two. Transport measurements will be correlated with morphological structure for a number of devices fabricated with various degrees of crystalline quality.

Investigation of dielectric pocket induced variations in tunnel field effect transistor

NASA Astrophysics Data System (ADS)

Upasana; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

2016-04-01

The performance of conventional Tunnel FETs struggling from ambipolar issues, insufficient on-current, lower transconductance value, higher delay and lower cut off frequency has been improved by introducing several material and device engineering concepts in past few years. Keeping this in view, another interesting and reliable option i.e. Dielectric Pocket TFET (featuring a dielectric pocket placement near tunneling junction) has been comprehensively and qualitatively demonstrated using ATLAS device simulator. The architecture has been explored in terms of various device electrostatic parameters such as potential, energy band profile, electron and hole concentration, electric field variation and band to band generation rate (GBTB) near the tunneling junction where the Dielectric Pocket (DP) has been introduced. Subsequently, a detailed investigation by changing the position and dielectric constant of pocket at respective junctions has been made where DP induced variations in drain current, transconductance and parasitic capacitance have been examined. The work highlights major improvements over conventional TFET in terms of lower subthreshold swing and threshold voltage, higher drain current and transconductance, improved on-to-off current ratio, suppressed ambipolar conduction and improved dynamic power dissipation issues for low voltage analog and digital applications.

Single Molecule Spectroscopy of Amino Acids and Peptides by Recognition Tunneling

PubMed Central

Zhao, Yanan; Ashcroft, Brian; Zhang, Peiming; Liu, Hao; Sen, Suman; Song, Weisi; Im, JongOne; Gyarfas, Brett; Manna, Saikat; Biswas, Sovan; Borges, Chad; Lindsay, Stuart

2014-01-01

The human proteome has millions of protein variants due to alternative RNA splicing and post-translational modifications, and variants that are related to diseases are frequently present in minute concentrations. For DNA and RNA, low concentrations can be amplified using the polymerase chain reaction, but there is no such reaction for proteins. Therefore, the development of single molecule protein sequencing is a critical step in the search for protein biomarkers. Here we show that single amino acids can be identified by trapping the molecules between two electrodes that are coated with a layer of recognition molecules and measuring the electron tunneling current across the junction. A given molecule can bind in more than one way in the junction, and we therefore use a machine-learning algorithm to distinguish between the sets of electronic ‘fingerprints’ associated with each binding motif. With this recognition tunneling technique, we are able to identify D, L enantiomers, a methylated amino acid, isobaric isomers, and short peptides. The results suggest that direct electronic sequencing of single proteins could be possible by sequentially measuring the products of processive exopeptidase digestion, or by using a molecular motor to pull proteins through a tunnel junction integrated with a nanopore. PMID:24705512

Conditions for synchronization in Josephson-junction arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chernikov, A.A.; Schmidt, G.

An effective perturbation theoretical method has been developed to study the dynamics of Josephson Junction series arrays. It is shown that the inclusion of Junction capacitances, often ignored, has a significant impact on synchronization. Comparison of analytic with computational results over a wide range of parameters shows excellent agreement.

Magnetic field mediated conductance oscillation in graphene p–n junctions

NASA Astrophysics Data System (ADS)

Cheng, Shu-Guang

2018-04-01

The electronic transport of graphene p–n junctions under perpendicular magnetic field is investigated in theory. Under low magnetic field, the transport is determined by the resonant tunneling of Landau levels and conductance versus magnetic field shows a Shubnikov–de Haas oscillation. At higher magnetic field, the p–n junction subjected to the quasi-classical regime and the formation of snake states results in periodical backscattering and transmission as magnetic field varies. The conductance oscillation pattern is mediated both by magnetic field and the carrier concentration on bipolar regions. For medium magnetic field between above two regimes, the combined contributions of resonant tunneling, snake states oscillation and Aharanov–Bohm interference induce irregular oscillation of conductance. At very high magnetic field, the system is subjected to quantum Hall regime. Under disorder, the quantum tunneling at low magnetic field is slightly affected and the oscillation of snake states at higher magnetic field is suppressed. In the quantum Hall regime, the conductance is a constant as predicted by the mixture rule.

The Coulomb based magneto-electric coupling in multiferroic tunnel junctions and granular multiferroics

NASA Astrophysics Data System (ADS)

Udalov, O. G.; Beloborodov, I. S.

2018-05-01

We study magneto-electric effect in two systems: i) multiferroic tunnel junction (MFTJ) - magnetic tunnel junction with ferroelectric barrier and ii) granular multiferroic (GMF) in which ferromagnetic (FM) metallic grains embedded into ferroelectric matrix. We show that the Coulomb interaction influences the magnetic state of the system in several ways: i) through the spin-dependent part of the Coulomb interaction; ii) due to the Coulomb blockade effect suppressing electron hopping and therefore reducing magnetic coupling; and iii) through image forces and polarization screening that modify the barrier for electrons in MFTJ and GMF. We show that in the absence of spin-orbit or strain-mediated coupling magneto-electric effect appears in GMF and MFTJ. The Coulomb interaction depends on the dielectric properties of the system. For GMF it depends on the dielectric constant of FE matrix and for MFTJ on the dielectric constant of the FE barrier. Applying external electric field one can tune the dielectric constant and the Coulomb interaction. Thus, one can control magnetic state with electric field.

Probing fast heating in magnetic tunnel junction structures with exchange bias

NASA Astrophysics Data System (ADS)

Papusoi, C.; Sousa, R.; Herault, J.; Prejbeanu, I. L.; Dieny, B.

2008-10-01

Heat diffusion in a magnetic tunnel junction (MTJ) having a ferromagnetic/antiferromagnetic free layer is investigated. The MTJ is heated by an electric current pulse of power PHP, flowing through the junction in current perpendicular to the plane (CPP) geometry, via Joule heat dissipation in the tunnel barrier. According to a proposed one-dimensional (1D) model of heat diffusion, when an electric voltage is applied to the MTJ, the free layer experiences a transient temperature regime, characterized by an exponential increase of its temperature TAF with a time constant τTR, followed by a steady temperature regime characterized by TAF=TRT+αPHP, where TRT is the room temperature and α is a constant. Magnetic transport measurements of exchange bias HEX acting on the free layer allow the determination of α and τTR. The experimental values of α and τTR are in agreement with those calculated using the 1D model and an estimation of the MTJ thermodynamic parameters based on the Dulong-Petit and Widemann-Franz laws.

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr

For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2}more » pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.« less

Tunneling Spectroscopy of Superconducting MoN and NbTiN Grown by Atomic Layer Deposition.

DOE PAGES

Groll, Nickolas; Klug, Jeffrey A.; Cao, Chaoyue; ...

2014-03-03

A tunneling spectroscopy study is presented of superconducting MoN and Nbo.8Tio.2N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV, respectively, with a corresponding critical temperature of 11.5K and 13.4 K, among the highest reported Tc values achieved by the ALD technique.Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below rvl0%) were obtained using an artificial tunnel barrier of Ah03 on the film's surface grown exmore » situ by ALD. We find a large critical current density on the order of 4 x 106Ncm2 at T =0.8Tc for a 60 run MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.« less

The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

NASA Astrophysics Data System (ADS)

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

2018-05-01

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Groll, Nickolas R.; Klug, Jeffrey A.; Cao, Chaoyue; Altin, Serdar; Claus, Helmut; Becker, Nicholas G.; Zasadzinski, John F.; Pellin, Michael J.; Proslier, Thomas

2014-03-01

A tunneling spectroscopy study is presented of superconducting MoN and Nb0.8Ti0.2N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2 meV and 2.4 meV, respectively, with a corresponding critical temperature of 11.5 K and 13.4 K, among the highest reported Tc values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ˜10%) were obtained using an artificial tunnel barrier of Al2O3 on the film's surface grown ex situ by ALD. We find a large critical current density on the order of 4 × 106 A/cm2 at T = 0.8Tc for a 60 nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest that the ALD technique offers significant promise for thin film superconducting device applications.

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

TOPICAL REVIEW: Spin-dependent tunnelling in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Tsymbal, Evgeny Y.; Mryasov, Oleg N.; LeClair, Patrick R.

2003-02-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR.

230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji

2005-02-01

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

NASA Astrophysics Data System (ADS)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

DOEpatents

Yang, Liyou; Chen, Liangfan

1998-03-24

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Resonant Tunneling Analog-To-Digital Converter

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.

1995-01-01

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

NASA Astrophysics Data System (ADS)

Zhang, Jia; Chen, X. Z.; Song, C.; Feng, J. F.; Wei, H. X.; Lü, Jing-Tao

2018-04-01

The magnetic phase-transition tunnel-magnetoresistance (MPT-TMR) effect with a single magnetic electrode is investigated by first-principles calculations. The calculations show that the MPT-TMR of an α'-FeRh /MgO /Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of α'-FeRh changes from G -type antiferromagnetic (G -AFM ) to ferromagnetic order. This type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magnetoresistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at the G -AFM FeRh /MgO interface. A direct FeRh /MgO interface is found to be necessary for achieving a high MPT-TMR experimentally. Moreover, we find the α'-FeRh /MgO interface with FeRh in the ferromagnetic phase has nearly full spin polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin injector. In addition, the electric-field-driven MPT of FeRh-based heteromagnetic nanostructures can be utilized to design various energy-efficient tunnel-junction structures and the corresponding lower-power-consumption devices. We also discuss the consequence of various junction defects on MPT-TMR. The interface oxygen layer is found to be detrimental to MPT-TMR. The sign of MPT-TMR is reversed with Rh termination due to the lack of contribution from the interface resonance states. However, the MPT-TMR may be robust against the oxygen vacancy inside of MgO and the shift of the Fermi energy. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.

Near-Field Enhanced Photochemistry of Single Molecules in a Scanning Tunneling Microscope Junction.

PubMed

Böckmann, Hannes; Gawinkowski, Sylwester; Waluk, Jacek; Raschke, Markus B; Wolf, Martin; Kumagai, Takashi

2018-01-10

Optical near-field excitation of metallic nanostructures can be used to enhance photochemical reactions. The enhancement under visible light illumination is of particular interest because it can facilitate the use of sunlight to promote photocatalytic chemical and energy conversion. However, few studies have yet addressed optical near-field induced chemistry, in particular at the single-molecule level. In this Letter, we report the near-field enhanced tautomerization of porphycene on a Cu(111) surface in a scanning tunneling microscope (STM) junction. The light-induced tautomerization is mediated by photogenerated carriers in the Cu substrate. It is revealed that the reaction cross section is significantly enhanced in the presence of a Au tip compared to the far-field induced process. The strong enhancement occurs in the red and near-infrared spectral range for Au tips, whereas a W tip shows a much weaker enhancement, suggesting that excitation of the localized plasmon resonance contributes to the process. Additionally, using the precise tip-surface distance control of the STM, the near-field enhanced tautomerization is examined in and out of the tunneling regime. Our results suggest that the enhancement is attributed to the increased carrier generation rate via decay of the excited near-field in the STM junction. Additionally, optically excited tunneling electrons also contribute to the process in the tunneling regime.

A comprehensive picture in the view of atomic scale on piezoelectricity of ZnO tunnel junctions: The first principles simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Genghong; Zhu, Jia; Jiang, Gelei

Piezoelectricity is closely related with the performance and application of piezoelectric devices. It is a crucial issue to understand its detailed fundamental for designing functional devices with more peculiar performances. Basing on the first principles simulations, the ZnO piezoelectric tunnel junction is taken as an example to systematically investigate its piezoelectricity (including the piezopotential energy, piezoelectric field, piezoelectric polarization and piezocharge) and explore their correlation. The comprehensive picture of the piezoelectricity in the ZnO tunnel junction is revealed at atomic scale and it is verified to be the intrinsic characteristic of ZnO barrier, independent of its terminated surface but dependentmore » on its c axis orientation and the applied strain. In the case of the ZnO c axis pointing from right to left, an in-plane compressive strain will induce piezocharges (and a piezopotential energy drop) with positive and negative signs (negative and positive signs) emerging respectively at the left and right terminated surfaces of the ZnO barrier. Meanwhile a piezoelectric polarization (and a piezoelectric field) pointing from right to left (from left to right) are also induced throughout the ZnO barrier. All these piezoelectric physical quantities would reverse when the applied strain switches from compressive to tensile. This study provides an atomic level insight into the fundamental behavior of the piezoelectricity of the piezoelectric tunnel junction and should have very useful information for future designs of piezoelectric devices.« less

The rate of charge tunneling is insensitive to polar terminal groups in self-assembled monolayers in Ag(TS)S(CH2)(n)M(CH2)(m)T//Ga2O3/EGaIn junctions.

PubMed

Yoon, Hyo Jae; Bowers, Carleen M; Baghbanzadeh, Mostafa; Whitesides, George M

2014-01-08

This paper describes a physical-organic study of the effect of uncharged, polar, functional groups on the rate of charge transport by tunneling across self-assembled monolayer (SAM)-based large-area junctions of the form Ag(TS)S(CH2)(n)M(CH2)(m)T//Ga2O3/EGaIn. Here Ag(TS) is a template-stripped silver substrate, -M- and -T are "middle" and "terminal" functional groups, and EGaIn is eutectic gallium-indium alloy. Twelve uncharged polar groups (-T = CN, CO2CH3, CF3, OCH3, N(CH3)2, CON(CH3)2, SCH3, SO2CH3, Br, P(O)(OEt)2, NHCOCH3, OSi(OCH3)3), having permanent dipole moments in the range 0.5 < μ < 4.5, were incorporated into the SAM. A comparison of the electrical characteristics of these junctions with those of junctions formed from n-alkanethiolates led to the conclusion that the rates of charge tunneling are insensitive to the replacement of terminal alkyl groups with the terminal polar groups in this set. The current densities measured in this work suggest that the tunneling decay parameter and injection current for SAMs terminated in nonpolar n-alkyl groups, and polar groups selected from common polar organic groups, are statistically indistinguishable.

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

2013-07-01

Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 104, about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

Chemical and electronic studies of CoFeB / MgO / CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Read, J.; Cha, J.; Huang, P.; Egelhoff, W.; Muller, D.; Buhrman, R.

2008-03-01

MgO based magnetic tunnel junctions (MTJs), particularly the CoFeB/MgO/CoFeB system, exhibit large tunneling magnetoresistance (TMR) which makes them viable for MRAM [1] and sensor applications. Careful engineering of the MgO tunnel barriers, CoFeB electrodes, and their interfaces is essential for optimizing device performance [2,3], which motivates investigation of the chemical and electronic properties of high quality MTJs. We correlate scanning tunneling (STS), x-ray photoelectron (XPS) [4], and electron energy loss (EELS) [5] spectroscopies with current-in-plane tunneling (CIPT) measurements to gain insight on the electronic structure and chemistry of MgO MTJ structures. The measurements reveal that quite high TMR (>200%) can be obtained when there is substantial boron in the tunnel barrier, showing that proper doping of the MgO layer plays a significant role in the performance of such MTJs. We will discuss the impact of materials properties upon transport measurements and provide suggestions for greater control over MTJ device characteristics. [1] Parkin, Nat. Mater. 3, 862 (2004). [2] Nagamine, APL 89, 162507 (2006). [3] Lee, APL 90, 212507 (2007). [4] Read, APL 90, 132503 (2007). [5] Cha, APL 91, 062516 (2007).

First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

NASA Astrophysics Data System (ADS)

Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

2017-02-01

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

A low noise 230 GHz heterodyne receiver employing .25 sq micron area Nb/AlO(x)/Nb tunnel junctions

NASA Technical Reports Server (NTRS)

Kooi, Jacob W.; Chan, M.; Phillips, T. G.; Bumble, B.; Leduc, H. G.

1992-01-01

Recent results for a full height rectangular waveguide mixer with an integrated IF matching network are reported. Two 0.25 sq micron Nb/AlO(x)/Nb superconducting insulating superconducting (SIS) tunnel junctions with a current density of about 8500 A/sq cm and omega RC of about 2.5 at 230 GHz have been tested. Detailed measurements of the receiver noise have been made from 200-290 GHz for both junctions at 4.2 K. The lowest receiver noise temperatures were recorded at 239 GHz, measuring 48 K DSB at 4.2 K and 40 K DSB at 2.1 K. The 230 GHz receiver incorporates a one octave wide integrated low pass filter and matching network which transforms the pumped IF junction impedance to 50 ohms over a wide range of impedances.

Understanding charge transport in molecular electronics.

PubMed

Kushmerick, J J; Pollack, S K; Yang, J C; Naciri, J; Holt, D B; Ratner, M A; Shashidhar, R

2003-12-01

For molecular electronics to become a viable technology the factors that control charge transport across a metal-molecule-metal junction need to be elucidated. We use an experimentally simple crossed-wire tunnel junction to interrogate how factors such as metal-molecule coupling, molecular structure, and the choice of metal electrode influence the current-voltage characteristics of a molecular junction.

MgAl{sub 2}O{sub 4}(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmoubarik, Mohamed; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu

We developed a fabrication process of an epitaxial MgAl{sub 2}O{sub 4} barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl{sub 2}O{sub 4} spinel sintered target. Annealing the sputter-deposited MgAl{sub 2}O{sub 4} layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl{sub 2}O{sub 4}/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative methodmore » for the realization of high performance MTJs with a spinel-based tunnel barrier.« less

Tunneling spectroscopy of Al/AlO{sub x}/Pb subjected to hydrostatic pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Jun; Hou, Xing-Yuan; Guan, Tong

2015-05-18

We develop an experimental tool to investigate high-pressure electronic density of state by combining electron tunneling spectroscopy measurements with high-pressure technique. It is demonstrated that tunneling spectroscopy measurement on Al/AlO{sub x}/Pb junction is systematically subjected to hydrostatic pressure up to 2.2 GPa. Under such high pressure, the normal state junction resistance is sensitive to the applied pressure, reflecting the variation of band structure of the barrier material upon pressures. In superconducting state, the pressure dependence of the energy gap Δ{sub 0}, the gap ratio 2Δ{sub 0}/k{sub B}T{sub c}, and the phonon spectral energy is extracted and compared with those obtained inmore » the limited pressure range. Our experimental results show the accessibility and validity of high pressure tunneling spectroscopy, offering wealthy information about high pressure superconductivity.« less

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

DOE PAGES

Li, D. L.; Ma, Q. L.; Wang, S. G.; ...

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δmore » 1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

PubMed Central

Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X.-G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

2014-01-01

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices. PMID:25451163

STM-induced light emission enhanced by weakly coupled organic ad-layers

NASA Astrophysics Data System (ADS)

Cottin, M. C.; Ekici, E.; Bobisch, C. A.

2018-03-01

We analyze the light emission induced by the tunneling current flowing in a scanning tunneling microscopy experiment. In particular, we study the influence of organic ad-layers on the light emission on the initial monolayer of bismuth (Bi) on Cu(111) in comparison to the well-known case of organic ad-layers on Ag(111). On the Bi/Cu(111)-surface, we find that the scanning tunneling microscopy-induced light emission is considerably enhanced if an organic layer, e.g., the fullerene C60 or the perylene derivate perylene-tetracarboxylic-dianhydride, is introduced into the tip-sample junction. The enhancement can be correlated with a peculiarly weak interaction between the adsorbed molecules and the underlying Bi/Cu(111) substrate as compared to the Ag(111) substrate. This allows us to efficiently enhance and tune the coupling of the tunneling current to localized excitations of the tip-sample junction, which in turn couple to radiative decay channels.

Fan array wind tunnel: a multifunctional, complex environmental flow manipulator

NASA Astrophysics Data System (ADS)

Dougherty, Christopher; Veismann, Marcel; Gharib, Morteza

2017-11-01

The recent emergence of small unmanned aerial vehicles (UAVs) has reshaped the aerospace testing environment. Traditional closed-loop wind tunnels are not particularly suited nor easily retrofit to take advantage of these coordinated, controls-based rotorcraft. As such, a highly configurable, novel wind tunnel aimed at addressing the unmet technical challenges associated with single or formation flight performance of autonomous drone systems is presented. The open-loop fan array wind tunnel features 1296 individually controllable DC fans arranged in a 2.88m x 2.88m array. The fan array can operate with and without a tunnel enclosure and is able to rotate between horizontal and vertical testing configurations. In addition to standard variable speed uniform flow, the fan array can generate both unsteady and shear flows. Through the aid of smaller side fan array units, vortex flows are also possible. Conceptual design, fabrication, and validation of the tunnel performance will be presented, including theoretical and computational predictions of flow speed and turbulence intensity. Validation of these parameters is accomplished through standard pitot-static and hot-wire techniques. Particle image velocimetry (PIV) of various complex flows will also be shown. This material is based upon work supported by the Center for Autonomous Systems and Technologies (CAST) at the Graduate Aerospace Laboratories of the California Institute of Technology (GALCIT).

Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratiomore » and hence the barrier quality.« less

Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

DOE PAGES

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.; ...

2018-01-08

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratiomore » and hence the barrier quality.« less

Self-organized ferromagnetic nanowires in MgO-based magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Seike, Masayoshi; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

2013-08-01

The focus of this study is to examine the distribution of defects and defect-induced properties in MgO-based magnetic tunnel junctions (MTJs). To this end, first-principles calculations were performed to estimate the electronic structures and total energies of MgO with various defects by using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. From connections drawn between the calculated results and previously reported experimental data, we propose that self-organized ferromagnetic nanowires of magnesium vacancies can be formed in MgO-based MTJs. This self-organization may provide the foundation for a comprehensive understanding of the conductivity, tunnel barriers and quantum oscillations of MgO-based MTJs. Further experimental verification is needed before firm conclusions can be drawn.

Series array of highly hysteretic Josephson junctions coupled to a microstrip resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costabile, G.; Andreone, D.; Lacquaniti, V.

1985-07-15

We have tested a new device based on a 12 junction array coupled to a resonator. We have explored the feasibility of the phase lock for all the junctions at the same biasing current, which yields voltage quantization across each junction, eliminating the need to individually bias the junctions. The whole rf structure has been realized by stripline technology. The resonator is fed by a 50-..cap omega.. line and is decoupled from the dc circuit by elliptical low-pass filters inserted in the bias leads.

Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2017-09-01

The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Low-noise 115-GHz receiver using superconducting tunnel junctions

NASA Technical Reports Server (NTRS)

Pan, S.-K.; Feldman, M. J.; Kerr, A. R.; Timble, P.

1983-01-01

A 110-118-GHz receiver based on a superconducting quasiparticle tunnel junction mixer is described. The single-sideband noise temperature is as low as 68 + or - 3 K. This is nearly twice the sensitivity of any other receiver at this frequency. The receiver was designed using a low-frequency scale model in conjunction with the quantum mixer theory. A scaled version of the receiver for operation at 46 GHz has a single-sideband noise temperature of 55 K. The factors leading to the success of this design are discussed.

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

PubMed

Zhu, Jian; Katine, J A; Rowlands, Graham E; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan G; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L; Krivorotov, Ilya N

2012-05-11

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Further developments of series-connected superconducting tunnel junction to radiation detection

NASA Astrophysics Data System (ADS)

Kurakado, Masahiko; Ohsawa, Daisuke; Katano, Rintaro; Ito, Shin; Isozumi, Yasuhito

1997-10-01

One of the promising radiation detection devices for various practical applications is the series-connected superconducting tunnel junction (STJ) detector. In this article, interesting topics of the detectors are described since our previous work: e.g., more than two order higher detection efficiency compared with single STJ detectors, high count rate detection, and position resolution. Detectors were cooled to 0.35-0.4 K by means of a convenient 3He cryostat. The 5.9 and 6.5 keV x rays from 55Fe are separated by a detector specially designed for x-ray detection. The possible count rate of the series-junction detector estimated from the shaping-time constant applied in the measurements is high, e.g., over 104 counts per second. A series-junction detector equipped with a position sensing mechanism has shown a position resolution of about 35 μm in a sensing area with a radius of 1.1 mm. The position resolution of series junctions improves the energy resolution. A new type series-connected STJ detector is also proposed, i.e., the dispersed multitrap series-junction detector, for further improvement of detection efficiency and energy resolution.

Replacing Ag(TS)SCH(2)-R with Ag(TS)O(2)C-R in EGaIn-based tunneling junctions does not significantly change rates of charge transport.

PubMed

Liao, Kung-Ching; Yoon, Hyo Jae; Bowers, Carleen M; Simeone, Felice C; Whitesides, George M

2014-04-07

This paper compares rates of charge transport by tunneling across junctions with the structures Ag(TS) X(CH2 )2n CH3  //Ga2 O3  /EGaIn (n=1-8 and X= SCH2  and O2 C); here Ag(TS) is template-stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (β, Å(-1) ) and the injection current (J0 , A cm(-2) ) of the junctions comprising SAMs of n-alkanethiolates and n-alkanoates. Replacing Ag(TS) SCH2 -R with Ag(TS) O2 C-R (R=alkyl chains) had no significant influence on J0 (ca. 3×10(3)  A cm(-2) ) or β (0.75-0.79 Å(-1) )-an indication that such changes (both structural and electronic) in the Ag(TS) XR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n-alkanoates showed, as expected, that β for aliphatic (0.79 Å(-1) ) and aromatic (0.60 Å(-1) ) SAMs differed significantly. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Holographic s-wave and p-wave Josephson junction with backreaction

NASA Astrophysics Data System (ADS)

Wang, Yong-Qiang; Liu, Shuai

2016-11-01

In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

Spin electronic magnetic sensor based on functional oxides for medical imaging

NASA Astrophysics Data System (ADS)

Solignac, A.; Kurij, G.; Guerrero, R.; Agnus, G.; Maroutian, T.; Fermon, C.; Pannetier-Lecoeur, M.; Lecoeur, Ph.

2015-09-01

To detect magnetic signals coming from the body, in particular those produced by the electrical activity of the heart or of the brain, the development of ultrasensitive sensors is required. In this regard, magnetoresistive sensors, stemming from spin electronics, are very promising devices. For example, tunnel magnetoresistance (TMR) junctions based on MgO tunnel barrier have a high sensitivity. Nevertheless, TMR also often have high level of noise. Full spin polarized materials like manganite La0.67Sr0.33MnO3 (LSMO) are attractive alternative candidates to develop such sensors because LSMO exhibits a very low 1/f noise when grown on single crystals, and a TMR response has been observed with values up to 2000%. This kind of tunnel junctions, when combined with a high Tc superconductor loop, opens up possibilities to develop full oxide structures working at liquid nitrogen temperature and suitable for medical imaging. In this work, we investigated on LSMO-based tunnel junctions the parameters controlling the overall system performances, including not only the TMR ratio, but also the pinning of the reference layer and the noise floor. We especially focused on studying the effects of the quality of the barrier, the interface and the electrode, by playing with materials and growth conditions.

Metal spintronics: Tunneling spectroscopy in junctions with magnetic and superconducting electrodes

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

Recent advances in generating, manipulating and detecting spin-polarized electrons and their electrical current make possible entirely new classes of spin-based sensor, logic and storage devices. An important such device is the magnetic tunnel junction (MTJ) which has been under intensive study in recent years: important applications include nonvolatile memory cells for high performance magnetic random access memory (MRAMs), and magnetic field sensors for high density hard disk drive read heads. Many aspects of the tunneling magnetoresistance (TMR) phenomenon are poorly understood although it is clear that the fundamental origin of TMR is the spin-polarization of the tunneling current. Thus, the measurement of the magnitude and sign of the tunneling spin polarization (TSP) is very important to help the further understanding of TMR. Recently, an extremely high TMR value, of up to 350% at room temperature, has been reported in practical MTJ devices. These MTJs are fabricated with highly oriented crystalline MgO(100) tunnel barriers by straightforward magnetron sputter deposition at room temperature. In parallel with this observation, we report extremely high TSP values exceeding 90% from CoFe/MgO tunnel spin injectors. These TSP values rival the highest polarization values previously reported using exotic half-metallic oxide ferromagnets. The spin polarization of electrons extracted from ferromagnetic films can be probed by a variety of techniques. Amongst these techniques, STS is perhaps the most relevant with respect to TMR but until now all measurements have been made with Al superconducting films which have low superconducting transition temperatures (Tc) so that the measurements must be made at temperatures below 400mK. We demonstrate the use of superconducting electrodes formed from NbN which has a much higher Tc (˜16K) than Al. The use of NbN allows measurements of TSP at higher temperatures above 1K. We have observed the phenomenon of Kondo-assisted tunneling in planar magnetic tunnel junctions. We demonstrate not only an increased conductance at low bias but also show that the tunneling magnetoresistance is quenched in the Kondo regime. The Kondo effect may be a useful means of detecting and possibly manipulating the spins of individual electrons in nanodots.

Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers.

PubMed

Smith, Christopher E; Xie, Zuoti; Bâldea, Ioan; Frisbie, C Daniel

2018-01-18

Conducting probe atomic force microscopy (CP-AFM) was employed to examine electron tunneling in self-assembled monolayer (SAM) junctions. A 2.3 nm long perylene tetracarboxylic acid diimide (PDI) acceptor molecule equipped with isocyanide linker groups was synthesized, adsorbed onto Ag, Au and Pt substrates, and the current-voltage (I-V) properties were measured by CP-AFM. The dependence of the low-bias resistance (R) on contact work function indicates that transport is LUMO-assisted ('n-type behavior'). A single-level tunneling model combined with transition voltage spectroscopy (TVS) was employed to analyze the experimental I-V curves and to extract the effective LUMO position ε l = E LUMO - E F and the effective electronic coupling (Γ) between the PDI redox core and the contacts. This analysis revealed a strong Fermi level (E F ) pinning effect in all the junctions, likely due to interface dipoles that significantly increased with increasing contact work function, as revealed by scanning Kelvin probe microscopy (SKPM). Furthermore, the temperature (T) dependence of R was found to be substantial. For Pt/Pt junctions, R varied more than two orders of magnitude in the range 248 K < T < 338 K. Importantly, the R(T) data are consistent with a single step electron tunneling mechanism and allow independent determination of ε l , giving values compatible with estimates of ε l based on analysis of the full I-V data. Theoretical analysis revealed a general criterion to unambiguously rule out a two-step transport mechanism: namely, if measured resistance data exhibit a pronounced Arrhenius-type temperature dependence, a two-step electron transfer scenario should be excluded in cases where the activation energy depends on contact metallurgy. Overall, our results indicate (1) the generality of the Fermi level pinning phenomenon in molecular junctions, (2) the utility of employing the single level tunneling model for determining essential electronic structure parameters (ε l and Γ), and (3) the importance of changing the nature of the contacts to verify transport mechanisms.

Fractional Solitons in Excitonic Josephson Junctions

NASA Astrophysics Data System (ADS)

Su, Jung-Jung; Hsu, Ya-Fen

The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

Tunneling spin polarization in planar tunnel junctions: measurements using NbN superconducting electrodes and evidence for Kondo-assisted tunneling

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

2006-03-01

The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. Here, we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We comparemore » self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. Furthermore, the highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. We have observed this asymmetry in heating and is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.« less

Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

DTIC Science & Technology

2016-03-01

where barriers, tunneling , scattering, strong polarization-induced fields, or carrier localization due to Type I or Type II quantum-well structures can... tunneling across junctions, scattering at heterointerfaces, and internal fields. For light-emitting devices, poor charge transport across multilayer...localization of holes and rapid electron tunneling .5 However, direct transport properties were Approved for public release; distribution is

Electronic structure of sputter deposited MgO(100) tunnel barriers in magnetic tunnel junction structures exhibiting giant tunneling magnetoresistance

NASA Astrophysics Data System (ADS)

Yang, See-Hun; Samant, Mahesh; Parkin, Stuart

2007-03-01

Giant tunneling magnetoresistance (TMR) in magnetic tunnel junctions formed with crystalline MgO tunnel barriers [1] have potential applications in a wide variety of spintronic devices. However, the relationship of the TMR to the detailed chemical and electronic structure of the MgO barrier and its interfaces with the ferromagnetic electrodes is not yet fully understood. We have carried out valence band photoemission spectroscopy and x-ray absorption spectroscopy to characterize the chemical state and electronic structure of sputter deposited, highly oriented, MgO (001) barriers and its interfaces with ferromagnetic electrodes. A large band gap of ˜7.5 eV is found even for ultrathin MgO layers. This is consistent with barrier heights found from fitting current versus voltage curves providing that very small effective electron masses are used. We discuss the role of thin Mg interface layers that we have used to reduce oxidation of the underlying ferromagnetic layer during the MgO layer formation [1]. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, S.-H. Yang, Nature Materials 3, 862 (2004).

Current-driven thermo-magnetic switching in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Optimization of niobium tunnel junctions as X-ray detectors

NASA Technical Reports Server (NTRS)

Saulnier, Gregory G.; Zacher, Robert A.; Van Vechten, Deborah; Boyer, Craig; Lovellette, Michael N.; Fritz, Gilbert G.; Soulen, Robert J.; Kang, Joonhee; Blamire, Mark; Kirk, Eugenie C. G.

1992-01-01

We report on our ongoing work using Nb/Al/AlO(x)/Nb junctions for the detection of X-rays. Detectors based on superconducting tunneling junctions offer the prospect of resolution over an order of magnitude higher than is obtainable with the current generation of semiconductor-based detectors. Results of measurements taken at 1.85 K (a temperature achievable with current space flight technology) include the current-voltage (I-V) curve, subgap current vs temperature, the dependence of the superconducting current on the applied magnetic field (Fraunhofer pattern), X-ray pulses, and the spectra from a 6 keV X-ray source which gave an intrinsic device resolution of approximately 700 eV. The collection of more than 10 exp 5 electrons per 6 keV photon is established.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

A comparative study of three-terminal Hanle signals in CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jeong-Hyeon; Cho, B. K., E-mail: chobk@gist.ac.kr; Grünberg Center for Magnetic Nanomaterials, Gwangju Institute of Science and Technology

We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO{sub 2}/n{sup +}-Si and Cu/SiO{sub 2}/n{sup +}-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO{sub 2}/n{sup +}-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO{sub 2}/n{sup +}-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO{sub 2}/n{sup +}-Si, even though a lot of samples with various tunnel resistances were studiedmore » in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO{sub 2}/n{sup +}-Si tunnel junctions, where the SiO{sub 2} was formed by plasma oxidation to minimize impurities.« less

Temperature dependence of a superconducting tunnel junction x-ray detector

NASA Astrophysics Data System (ADS)

Hiller, Lawrence J.; Labov, Simon E.; Mears, Carl A.; Barfknecht, Andrew T.; Frank, Matthias A.; Netel, Harrie; Lindeman, Mark A.

1995-09-01

Superconducting tunnel junctions can be used as part of a high-resolution, energy-dispersive x- ray detector. The energy of the absorbed x ray is used to break superconducting electron pairs, producing on the order of 10(superscript 6) excitations, called quasiparticles. The number of quasiparticles produced is proportional to the energy of the absorbed x ray. When a bias voltage is maintained across the barrier, these quasiparticles produce a net tunneling current. Either the peak tunneling current or the total tunneled charge may be measured to determine the energy of the absorbed x ray. The tunneling rate, and therefore the signal, is enhanced by the use of a quasiparticle trap near the tunnel barrier. The trapping efficiency is improved by decreasing the energy gap, though this reduces the maximum temperature at which the device may operate. In our niobium/aluminum configuration, we can very the energy gap in the trapping layer by varying its thickness. This paper examines the performance of two devices with 50 nm aluminum traps at temperatures ranging from 100 mK to 700 mK. We found that this device has a very good energy resolution of about 12 eV FWHM at 1 keV. This energy resolution is independent of temperature for much of this temperature range.

Extended Hubbard model for mesoscopic transport in donor arrays in silicon

NASA Astrophysics Data System (ADS)

Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

2017-12-01

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Encoding, training and retrieval in ferroelectric tunnel junctions

NASA Astrophysics Data System (ADS)

Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

2016-05-01

Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

Self-Organized Defects of Half-Metallic Nanowires in MgO-Based Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Seike, Masayoshi; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

2013-03-01

The purpose of this study is to examine the possibility of self-organization of defects and defect-induced properties in MgO-based magnetic tunnel junctions (MTJs). Using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional, first-principles calculations were performed to estimate the electronic structures and total energies of MgO with various defects. From our thorough evaluation of the calculated results and previously reported experimental data, we propose that self-organized half-metallic nanowires of magnesium vacancies can be formed in MgO-based MTJs. This self-organization may provide the foundation for a comprehensive understanding of the conductivity, tunnel barriers and quantum oscillations of MgO-based MTJs. Further experimental verification is needed before firm conclusions can be drawn.

Fractional Solitons in Excitonic Josephson Junctions.

PubMed

Hsu, Ya-Fen; Su, Jung-Jung

2015-10-29

The Josephson effect is especially appealing to physicists because it reveals macroscopically the quantum order and phase. In excitonic bilayers the effect is even subtler due to the counterflow of supercurrent as well as the tunneling between layers (interlayer tunneling). Here we study, in a quantum Hall bilayer, the excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. The system is mapped into a pseudospin ferromagnet then described numerically by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, we identify a family of fractional sine-Gordon solitons which resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Each fractional soliton carries a topological charge Q that is not necessarily a half/full integer but can vary continuously. The calculated current-phase relation (CPR) shows that solitons with Q = ϕ0/2π is the lowest energy state starting from zero ϕ0 - until ϕ0 > π - then the alternative group of solitons with Q = ϕ0/2π - 1 takes place and switches the polarity of CPR.

Fractional Solitons in Excitonic Josephson Junctions

NASA Astrophysics Data System (ADS)

Hsu, Ya-Fen; Su, Jung-Jung

2015-10-01

The Josephson effect is especially appealing to physicists because it reveals macroscopically the quantum order and phase. In excitonic bilayers the effect is even subtler due to the counterflow of supercurrent as well as the tunneling between layers (interlayer tunneling). Here we study, in a quantum Hall bilayer, the excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. The system is mapped into a pseudospin ferromagnet then described numerically by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, we identify a family of fractional sine-Gordon solitons which resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Each fractional soliton carries a topological charge Q that is not necessarily a half/full integer but can vary continuously. The calculated current-phase relation (CPR) shows that solitons with Q = ϕ0/2π is the lowest energy state starting from zero ϕ0 - until ϕ0 > π - then the alternative group of solitons with Q = ϕ0/2π - 1 takes place and switches the polarity of CPR.

Observation of radiative surface plasmons in metal-oxide-metal tunnel junctions

NASA Technical Reports Server (NTRS)

Donohue, J. F.; Yang, E. Y.

1986-01-01

A peak in the UV region of the spectrum of light emitted from metal-oxide-metal (MOM) tunnel junctions has been observed at room temperature. Both the amplitude and wavelength of the peak are sensitive to applied junction bias. The UV peak corresponds to the normal or radiative surface plasmon mode while a visible peak, also present in the present spectra and reported in past MOM literature, is due to the tangential or nonradiative mode. The radiative mode requires no surface roughness or gratings for photon coupling. The results show that it is possible to obtain radiative surface plasmon production followed by a direct decay into photons with MOM tunnel diodes. A MOM diode with a double anode structure is found to emit light associated only with the nonradiative mode. The thickness dependence of the UV peak, along with the experimental results of the double anode MOM diode and the ratio of the UV peak to visible peak, support the contention that the UV light emission is indeed due to the radiative surface plasmon.

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

PubMed Central

Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai

2015-01-01

Summary Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

Non-renewal statistics for electron transport in a molecular junction with electron-vibration interaction

NASA Astrophysics Data System (ADS)

Kosov, Daniel S.

2017-09-01

Quantum transport of electrons through a molecule is a series of individual electron tunneling events separated by stochastic waiting time intervals. We study the emergence of temporal correlations between successive waiting times for the electron transport in a vibrating molecular junction. Using the master equation approach, we compute the joint probability distribution for waiting times of two successive tunneling events. We show that the probability distribution is completely reset after each tunneling event if molecular vibrations are thermally equilibrated. If we treat vibrational dynamics exactly without imposing the equilibration constraint, the statistics of electron tunneling events become non-renewal. Non-renewal statistics between two waiting times τ1 and τ2 means that the density matrix of the molecule is not fully renewed after time τ1 and the probability of observing waiting time τ2 for the second electron transfer depends on the previous electron waiting time τ1. The strong electron-vibration coupling is required for the emergence of the non-renewal statistics. We show that in the Franck-Condon blockade regime, extremely rare tunneling events become positively correlated.

A four-element end-fire microphone array for acoustic measurements in wind tunnels

NASA Technical Reports Server (NTRS)

Soderman, P. T.; Noble, S. C.

1974-01-01

A prototype four-element end-fire microphone array was designed and built for evaluation as a directional acoustic receiver for use in large wind tunnels. The microphone signals were digitized, time delayed, summed, and reconverted to analog form in such a way as to create a directional response with the main lobe along the array axis. The measured array directivity agrees with theoretical predictions confirming the circuit design of the electronic control module. The array with 0.15 m (0.5 ft) microphone spacing rejected reverberations and background noise in the Ames 40- by 80-foot wind tunnel by 5 to 12 db for frequencies above 400 Hz.

DISCRETE TUNNELING CURRENT FLUCTUATIONS IN METAL-WATER-METAL TUNNEL JUNCTIONS. (R829623)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

Single molecule junction conductance and binding geometry

NASA Astrophysics Data System (ADS)

Kamenetska, Maria

This Thesis addresses the fundamental problem of controlling transport through a metal-organic interface by studying electronic and mechanical properties of single organic molecule-metal junctions. Using a Scanning Tunneling Microscope (STM) we image, probe energy-level alignment and perform STM-based break junction (BJ) measurements on molecules bound to a gold surface. Using Scanning Tunneling Microscope-based break-junction (STM-BJ) techniques, we explore the effect of binding geometry on single-molecule conductance by varying the structure of the molecules, metal-molecule binding chemistry and by applying sub-nanometer manipulation control to the junction. These experiments are performed both in ambient conditions and in ultra high vacuum (UHV) at cryogenic temperatures. First, using STM imaging and scanning tunneling spectroscopy (STS) measurements we explore binding configurations and electronic properties of an amine-terminated benzene derivative on gold. We find that details of metal-molecule binding affect energy-level alignment at the interface. Next, using the STM-BJ technique, we form and rupture metal-molecule-metal junctions ˜104 times to obtain conductance-vs-extension curves and extract most likely conductance values for each molecule. With these measurements, we demonstrated that the control of junction conductance is possible through a choice of metal-molecule binding chemistry and sub-nanometer positioning. First, we show that molecules terminated with amines, sulfides and phosphines bind selectively on gold and therefore demonstrate constant conductance levels even as the junction is elongated and the metal-molecule attachment point is modified. Such well-defined conductance is also obtained with paracyclophane molecules which bind to gold directly through the pi system. Next, we are able to create metal-molecule-metal junctions with more than one reproducible conductance signatures that can be accessed by changing junction geometry. In the case of pyridine-linked molecules, conductance can be reliably switched between two distinct conductance states using sub-nanometer mechanical manipulation. Using a methyl sulfide linker attached to an oligoene backbone, we are able to create a 3-nm-long molecular potentiometer, whose resistance can be tuned exponentially with Angstom-scale modulations in metal-molecule configuration. These experiments points to a new paradigm for attaining reproducible electrical characteristics of metal-organic devices which involves controlling linker-metal chemistry rather than fabricating identically structured metal-molecule interfaces. By choosing a linker group which is either insensitive to or responds reproducibly to changes in metal-molecule configuration, one can design single molecule devices with functionality more complex than a simple resistor. These ambient temperature experiments were combined with UHV conductance measurements performed in a commercial STM on amine-terminated benzene derivatives which conduct through a non-resonant tunneling mechanism, at temperatures varying from 5 to 300 Kelvin. Our results indicate that while amine-gold binding remains selective irrespective of environment, conductance is not temperature independent, in contrast to what is expected for a tunneling mechanism. Furthermore, using temperature-dependent measurements in ambient conditions we find that HOMO-conducting amines and LUMO-conducting pyridines show opposite dependence of conductance on temperature. These results indicate that energy-level alignment between the molecule and the electrodes changes as a result of varying electrode structure at different temperatures. We find that temperature can serve as a knob with which to tune transport properties of single molecule-metal junctions.

Low resistance tunnel junctions with remote plasma underoxidized thick barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferreira, R.; Freitas, P.P.; MacKenzie, M.

2005-05-15

Low resistance tunnel junctions suitable for >200 Gb/inch{sup 2} read heads require RxA<1 {omega}{mu}m{sup 2} and TMR>10%, usually achieved by natural oxidation with tAl<0.7 nm barriers. This paper shows that as-deposited junctions with competitive electrical and magnetic properties can be produced starting from 0.9 nm Al barriers and remote plasma oxidation in ion beam-deposited stacks using Co{sub 73.8}Fe{sub 16.2}B{sub 10} electrodes. TMR{approx}20% for RxA{approx}2-15 {omega}{mu}m{sup 2} is obtained, while in the RxA{approx}40-140 {omega}{mu}m{sup 2} range TMR can reach 40%-45%, in as-deposited samples. A limited number of junctions exhibits considerably lower RxA values with respect to the average while keeping similarmore » MR (down to 0.44 {omega}{mu}m{sup 2} with 20% and down to 2.2 {omega}{mu}m{sup 2} with 51%)« less

Superparamagnetic perpendicular magnetic tunnel junctions for true random number generators

NASA Astrophysics Data System (ADS)

Parks, Bradley; Bapna, Mukund; Igbokwe, Julianne; Almasi, Hamid; Wang, Weigang; Majetich, Sara A.

2018-05-01

Superparamagnetic perpendicular magnetic tunnel junctions are fabricated and analyzed for use in random number generators. Time-resolved resistance measurements are used as streams of bits in statistical tests for randomness. Voltage control of the thermal stability enables tuning the average speed of random bit generation up to 70 kHz in a 60 nm diameter device. In its most efficient operating mode, the device generates random bits at an energy cost of 600 fJ/bit. A narrow range of magnetic field tunes the probability of a given state from 0 to 1, offering a means of probabilistic computing.

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, H. B., E-mail: houbinghuang@gmail.com; Department of Physics, University of Science and Technology Beijing, Beijing 100083; Hu, J. M.

2014-09-22

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Superconducting properties of lithographic lead break junctions

NASA Astrophysics Data System (ADS)

Weber, David; Scheer, Elke

2018-01-01

We have fabricated mechanically controlled break junction samples made of lead (Pb) by means of state-of-the-art nanofabrication methods: electron beam lithography and physical vapour deposition. The electrical and magnetic properties were characterized in a {}3{He} cryostat and showed a hard superconducting gap. Temperature and magnetic field dependence of tunnel contacts were compared and quantitatively described by including either thermal broadening of the density of states or pair breaking in the framework of a Skalski model, respectively. We show point contact spectra of few-atom contacts and present tunneling spectra exhibiting a superconducting double-gap structure.

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.

2012-03-01

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Dynamic magnetoelectric effect in ferromagnet/superconductor tunnel junctions.

PubMed

Trif, Mircea; Tserkovnyak, Yaroslav

2013-08-23

We study the magnetization dynamics in a ferromagnet/insulator/superconductor tunnel junction and the associated buildup of the electrical polarization. We show that for an open circuit, the induced voltage varies strongly and nonmonotonically with the precessional frequency, and can be enhanced significantly by the superconducting correlations. For frequencies much smaller or much larger than the superconducting gap, the voltage drops to zero, while when these two energy scales are comparable, the voltage is peaked at a value determined by the driving frequency. We comment on the potential utilization of the effect for the low-temperature spatially resolved spectroscopy of magnetic dynamics.

Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field

NASA Astrophysics Data System (ADS)

Drobitch, Justine L.; Ahsanul Abeed, Md; Bandyopadhyay, Supriyo

2017-10-01

We describe an approach to implement precessional switching of a perpendicular-magnetic-anisotropy magneto-tunneling-junction (p-MTJ) without using any magnetic field. The switching is accomplished with voltage-controlled-magnetic-anisotropy (VCMA), spin transfer torque (STT) and mechanical strain. The soft layer of the p-MTJ is magnetostrictive and the strain acts as an effective in-plane magnetic field around which the magnetization of the soft layer precesses to complete a flip. A two-terminal energy-efficient p-MTJ based memory cell, that is compatible with crossbar architecture and high cell density, is designed.

Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Weicheng; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn

2014-11-10

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixedmore » conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.« less

Tunneling studies of compositionally modulated PB/Fe films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wawro, A.; Witek, A.; Majewski, J.

1988-01-01

Preliminary results of preparation and investigation of compositionally modulated Pb/Fe films are reported. These films have been used as electrodes in Al/Al/sub 2/O/sub 3//{kappa}(Pb/Fe) tunnel junctions and the tunnelling characteristics I-V, dV/dI and d/sup 2/V/d/I/sup 2/ vs V have been studied in dependence on the modulation period.

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Conformation-driven quantum interference effects mediated by through-space conjugation in self-assembled monolayers

NASA Astrophysics Data System (ADS)

Carlotti, Marco; Kovalchuk, Andrii; Wächter, Tobias; Qiu, Xinkai; Zharnikov, Michael; Chiechi, Ryan C.

2016-12-01

Tunnelling currents through tunnelling junctions comprising molecules with cross-conjugation are markedly lower than for their linearly conjugated analogues. This effect has been shown experimentally and theoretically to arise from destructive quantum interference, which is understood to be an intrinsic, electronic property of molecules. Here we show experimental evidence of conformation-driven interference effects by examining through-space conjugation in which π-conjugated fragments are arranged face-on or edge-on in sufficiently close proximity to interact through space. Observing these effects in the latter requires trapping molecules in a non-equilibrium conformation closely resembling the X-ray crystal structure, which we accomplish using self-assembled monolayers to construct bottom-up, large-area tunnelling junctions. In contrast, interference effects are completely absent in zero-bias simulations on the equilibrium, gas-phase conformation, establishing through-space conjugation as both of fundamental interest and as a potential tool for tuning tunnelling charge-transport in large-area, solid-state molecular-electronic devices.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Ferroelectricity and tunneling electroresistance effect in asymmetric ferroelectric tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, L. L.; Wang, J., E-mail: jianwang@hku.hk

2016-06-14

We report the investigation on the ferroelectricity and tunneling electroresistance (TER) effect in PbTiO{sub 3} (PTO)-based ferroelectric tunnel junctions (FTJs) using first-principles calculations. For symmetric FTJs, we have calculated the average polarizations of PTO film and effective screening lengths of different metal electrodes for a number of FTJs, which is useful for experimental research. For asymmetric FTJs, significant asymmetric ferroelectric displacements in PTO film are observed, which is attributed to the intrinsic field generated by the two dissimilar electrodes. Moreover, by performing quantum transport calculations on those asymmetric FTJs, a sizable TER effect is observed. It is found that themore » asymmetry of ferroelectric displacements in PTO barrier, which is determined by the difference of work functions of the electrodes, controls the observed TER effect. Our results will help unravel the TER mechanism of asymmetric FTJs in most experiments and will be useful for the designing of FTJ-based devices.« less

Electronic and mechanical characteristics of stacked dimer molecular junctions.

PubMed

Magyarkuti, András; Adak, Olgun; Halbritter, Andras; Venkataraman, Latha

2018-02-15

Break-junction measurements are typically aimed at characterizing electronic properties of single molecules bound between two metal electrodes. Although these measurements have provided structure-function relationships for such devices, there is little work that studies the impact of molecule-molecule interactions on junction characteristics. Here, we use a scanning tunneling microscope based break-junction technique to study pi-stacked dimer junctions formed with two amine-terminated conjugated molecules. We show that the conductance, force and flicker noise of such dimers differ dramatically when compared with the corresponding monomer junctions and discuss the implications of these results on intra- and inter-molecular charge transport.

Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes

NASA Astrophysics Data System (ADS)

Xiang, Hua

Magnetic tunnel junctions (MTJs) have attracted great interest for applications in read heads and nonvolatile magnetic random access memories. MTJs exhibit tunneling magnetoresistance (TMR), which is proportional to the spin polarization (SP) of ferromagnetic (FM) electrodes. This thesis describes the fabrication and characterization of inverse TMR MTJs with novel FM electrodes and tunnel barriers, including Fe3O4 and Fe4N electrodes and Ta2O5 tunnel barriers. Fe3O4 has been predicted to have perfect negative SP at the Fermi level, making it a promising FM electrode for inverse TMR MTJs. Two approaches were developed to grow epitaxial Fe3O 4 films on Si substrates, reactive sputtering and selective oxidation, and the physical properties were characterized. Epitaxial Fe3O 4 films with smooth surfaces were achieved using a TiN buffer and low temperature selective oxidation. Fe4N has also been predicted to have nearly perfect negative SP. Epitaxial Fe4N films were fabricated on Si substrates by reactive sputtering, and the magnetic properties and thermal stability were characterized. Fe4N is metastable with respect to decomposition into Fe and N 2. During room temperature air oxidation, an epitaxial Fe3O 4 layer formed on Fe4N surface, by incorporation of oxygen, decomposition of Fe4N, and release of N. We fabricated Fe4N/AlOx/Fe MTJs and found normal TMR for the as-prepared junction but inverse TMR with abnormal bias dependence after annealing. The TMR inversion is caused by an Fe3O4 layer at the Fe4N/AlO, interface. The abnormal bias dependence is caused by an imperfect Fe3O4/AlOx interface. Fe3O4 (or Fe4N)/Ta2O5/Fe MTJs show relatively low junction resistance and noisy TMR signals, due to the difficulty of preparing high quality Ta2O5 barriers. The effect of composition of bcc Co100-xFex electrodes on the TMR for AlOx-based MTJs has been studied. The TMR increases with x until it reaches a maximum of 66.7% at 28 at.% Fe, and then decreases. The reason for this TMR variation is the s-like electron dominant tunneling and the variation of the s-like electron density of state with different compositions.

Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic

DTIC Science & Technology

2012-05-10

carrier injection via band-to-band tunneling (BTBT) and the absence of thermal (kT) dependence allows for the subthreshold swing to be steeper than... tunneling probability was derived by Kane using time- dependent perturbation theory and Fermi’s Golden Rule [8-9]. This section will instead employ a...be based on tunneling across a reverse- biased p-n junction as shown in Fig. 2.2. In order to obtain a closed form solution of the BTBT

Mapping the Transmission Functions of Single-Molecule Junctions

DOE PAGES

Capozzi, Brian; Low, Jonathan Z.; Xia, Jianlong; ...

2016-06-08

Charge transport characteristics of single-molecule junctions are often governed by a transmission function that dictates the probability of electrons or holes tunneling across the junction. Here, we present a new and simple technique for measuring the transmission function of molecular junctions in the coherent tunneling limit, over an energy range of 2 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different areas exposed, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junctionmore » Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction’s transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed ab initio. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.« less

Mapping the Transmission Functions of Single-Molecule Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capozzi, Brian; Low, Jonathan Z.; Xia, Jianlong

Charge transport characteristics of single-molecule junctions are often governed by a transmission function that dictates the probability of electrons or holes tunneling across the junction. Here, we present a new and simple technique for measuring the transmission function of molecular junctions in the coherent tunneling limit, over an energy range of 2 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different areas exposed, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junctionmore » Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction’s transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed ab initio. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.« less

Low-noise submillimeter-wave NbTiN superconducting tunnel junction mixers

NASA Astrophysics Data System (ADS)

Kawamura, Jonathan; Chen, Jian; Miller, David; Kooi, Jacob; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

1999-12-01

We have developed a low-noise 850 GHz superconductor-insulator-superconductor quasiparticle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of TRX=260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high-gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2Δ/h˜1.2 THz.

Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

PubMed

Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

2016-02-10

Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

Low-Noise Submillimeter-Wave NbTiN Superconducting Tunnel Junction Mixers

NASA Technical Reports Server (NTRS)

Kawamura, J.; Chen, J.; Miller, D.; Kooi, J.; Zmuidzinas, J.; Bumble, B.; LeDuc, H. G.; Stern, J. A.

1999-01-01

We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.

Statistical evidence of strain induced breaking of metallic point contacts

NASA Astrophysics Data System (ADS)

Alwan, Monzer; Candoni, Nadine; Dumas, Philippe; Klein, Hubert R.

2013-06-01

A scanning tunneling microscopy in break junction regime and a mechanically controllable break junction are used to acquire thousands of conductance-elongation curves by stretching until breaking and re-connecting Au junctions. From a robust statistical analysis performed on large sets of experiments, parameters such as lifetime, elongation and occurrence probabilities are extracted. The analysis of results obtained for different stretching speeds of the electrodes indicates that the breaking mechanism of di- and mono-atomic junction is identical, and that the junctions undergo atomic rearrangement during their stretching and at the moment of breaking.

Single-molecule electronics: Cooling individual vibrational modes by the tunneling current.

PubMed

Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

2016-03-21

Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions.

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

NASA Astrophysics Data System (ADS)

Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

Invariant submanifold for series arrays of Josephson junctions.

PubMed

Marvel, Seth A; Strogatz, Steven H

2009-03-01

We study the nonlinear dynamics of series arrays of Josephson junctions in the large-N limit, where N is the number of junctions in the array. The junctions are assumed to be identical, overdamped, driven by a constant bias current, and globally coupled through a common load. Previous simulations of such arrays revealed that their dynamics are remarkably simple, hinting at the presence of some hidden symmetry or other structure. These observations were later explained by the discovery of N-3 constants of motion, the choice of which confines the resulting flow in phase space to a low-dimensional invariant manifold. Here we show that the dimensionality can be reduced further by restricting attention to a special family of states recently identified by Ott and Antonsen. In geometric terms, the Ott-Antonsen ansatz corresponds to an invariant submanifold of dimension one less than that found earlier. We derive and analyze the flow on this submanifold for two special cases: an array with purely resistive loading and another with resistive-inductive-capacitive loading. Our results recover (and in some instances improve) earlier findings based on linearization arguments.

Diagnostic glenohumeral arthroscopy fails to fully evaluate the biceps-labral complex.

PubMed

Taylor, Samuel A; Khair, M Michael; Gulotta, Lawrence V; Pearle, Andrew D; Baret, Nikolas J; Newman, Ashley M; Dy, Christopher J; O'Brien, Stephen J

2015-02-01

The purpose of this study was to define the limits of diagnostic glenohumeral arthroscopy and determine the prevalence and frequency of hidden extra-articular "bicipital tunnel" lesions among chronically symptomatic patients. Eight fresh-frozen cadaveric specimens underwent diagnostic glenohumeral arthroscopy with percutaneous tagging of the long head of the biceps tendon (LHBT) during maximal tendon excursion. The percentage of visualized LHBT was calculated relative to the distal margin of subscapularis tendon and the proximal margin of the pectoralis major tendon. Then, a retrospective review of 277 patients who underwent subdeltoid transfer of the LHBT to the conjoint tendon were retrospectively analyzed for lesions of the biceps-labral complex. Lesions were categorized by anatomic location (inside, junctional, or bicipital tunnel). Inside lesions were labral tears. Junctional lesions were LHBT tears visualized during glenohumeral arthroscopy. Bicipital tunnel lesions were extra-articular lesions hidden from view during standard glenohumeral arthroscopy. Seventy-eight percent of LHBT were visualized relative to the distal margin of the subscapularis tendon and only 55% relative to the proximal margin of the pectoralis major tendon. No portion of the LHBT inferior to the subscapularis tendon was visualized. Forty-seven percent of patients had hidden bicipital tunnel lesions. Scarring was most common and accounted for 48% of all such lesions. Thirty-seven percent of patients had multiple lesion locations. Forty-five percent of patients with junctional lesions also had hidden bicipital tunnel lesions. The only offending lesion was in the bicipital tunnel for 18% of patients. Diagnostic glenohumeral arthroscopy fails to fully evaluate the biceps-labral complex because it visualizes only 55% of the LHBT relative to the proximal margin of the pectoralis major tendon and did not identify extra-articular bicipital tunnel lesions present in 47% of chronically symptomatic patients. Level IV, therapeutic case series and cadaveric study. Copyright © 2015 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. H.; Cheng, Y. H.; Ko, C. W.

2015-10-12

This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed tomore » the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.« less

Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, Murat; Boulle, Olivier; Drouard, Marc

2014-01-27

We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density 5 × 10{sup 11} A/m{sup 2} in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memorymore » cell.« less

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

NASA Astrophysics Data System (ADS)

Tizno, Ofogh; Ganjipour, Bahram; Heurlin, Magnus; Thelander, Claes; Borgström, Magnus T.; Samuelson, Lars

2017-03-01

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = -0.5 V are extracted at room temperature after normalization with the effective junction area.

Electron scattering effects at physisorbed hydrogen molecules on break-junction electrodes and nanowires formation in hydrogen environment

NASA Astrophysics Data System (ADS)

van der Maas, M.; Vasnyov, S.; Hendriksen, B. L. M.; Shklyarevskii, O. I.; Speller, S.

2012-06-01

Physisorption of hydrogen molecules on the surface of gold and other coinage metals has been studied using distance tunneling spectroscopy. We have observed that the distance dependence of the tunnel current (resistance) displays a strong N-shaped deviation from exponential behavior. Such deviations are difficult to explain within the Tersoff-Hamann approximation. We suggest the scattering of tunneling electrons by H2 molecules as an origin for the observed effect. We have found that this phenomenon is also common for strongly adsorbed organic molecules with a single anchoring group. Pulling Au, Cu and Pt nanowires at 22 K in hydrogen environment shows that the break-junction electrodes are still connected through hydrogen-metal monoatomic chains down to very low conductance values of 10-4-10-6 G0.

Single-Molecule Electronic Measurements with Metal Electrodes

ERIC Educational Resources Information Center

Lindsay, Stuart

2005-01-01

A review of concepts like tunneling through a metal-molecule-metal-junction, contrast with electrochemical and optical-charge injection, strong-coupling limit, calculations of tunnel transport, electron transfer through Redox-active molecules is presented. This is followed by a discussion of experimental approaches for single-molecule measurements.

Superconductivity-induced macroscopic resonant tunneling.

PubMed

Goorden, M C; Jacquod, Ph; Weiss, J

2008-02-15

We show analytically and by numerical simulations that the conductance through pi-biased chaotic Josephson junctions is enhanced by several orders of magnitude in the short-wavelength regime. We identify the mechanism behind this effect as macroscopic resonant tunneling through a macroscopic number of low-energy quasidegenerate Andreev levels.

Initial Assessment of Acoustic Source Visibility with a 24-Element Microphone Array in the Arnold Engineering Development Center 80- by 120-Foot Wind Tunnel at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Horne, William C.

2011-01-01

Measurements of background noise were recently obtained with a 24-element phased microphone array in the test section of the Arnold Engineering Development Center 80- by120-Foot Wind Tunnel at speeds of 50 to 100 knots (27.5 to 51.4 m/s). The array was mounted in an aerodynamic fairing positioned with array center 1.2m from the floor and 16 m from the tunnel centerline, The array plate was mounted flush with the fairing surface as well as recessed in. (1.27 cm) behind a porous Kevlar screen. Wind-off speaker measurements were also acquired every 15 on a 10 m semicircular arc to assess directional resolution of the array with various processing algorithms, and to estimate minimum detectable source strengths for future wind tunnel aeroacoustic studies. The dominant background noise of the facility is from the six drive fans downstream of the test section and first set of turning vanes. Directional array response and processing methods such as background-noise cross-spectral-matrix subtraction suggest that sources 10-15 dB weaker than the background can be detected.

Gold Nanoparticles on Functionalized Silicon Substrate under Coulomb Blockade Regime: An Experimental and Theoretical Investigation.

PubMed

Pluchery, Olivier; Caillard, Louis; Dollfus, Philippe; Chabal, Yves J

2018-01-18

Single charge electronics offer a way for disruptive technology in nanoelectronics. Coulomb blockade is a realistic way for controlling the electric current through a device with the accuracy of one electron. In such devices the current exhibits a step-like increase upon bias which reflects the discrete nature of the fundamental charge. We have assembled a double tunnel junction on an oxide-free silicon substrate that exhibits Coulomb staircase characteristics using gold nanoparticles (AuNPs) as Coulomb islands. The first tunnel junction is an insulating layer made of a grafted organic monolayer (GOM) developed for this purpose. The GOM also serves for attaching AuNPs covalently. The second tunnel junction is made by the tip of an STM. We show that this device exhibits reproducible Coulomb blockade I-V curves at 40 K in vacuum. We also show that depending on the doping of the silicon substrate, the whole Coulomb staircase can be adjusted. We have developed a simulation approach based on the orthodox theory that was completed by calculating the bias dependent tunnel barriers and by including an accurate calculation of the band bending. This model accounts for the experimental data and the doping dependence of Coulomb oscillations. This study opens new perspectives toward designing new kind of single electron transistors (SET) based on this dependence of the Coulomb staircase with the charge carrier concentration.

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

DOE PAGES

Deschenes, Austin; Muneer, Sadid; Akbulut, Mustafa; ...

2016-11-11

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. Here, we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We comparemore » self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. Furthermore, the highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. We have observed this asymmetry in heating and is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.« less

Submucosal Tunneling Endoscopic Resection vs Thoracoscopic Enucleation for Large Submucosal Tumors in the Esophagus and the Esophagogastric Junction.

PubMed

Chen, Tao; Lin, Zong-Wu; Zhang, Yi-Qun; Chen, Wei-Feng; Zhong, Yun-Shi; Wang, Qun; Yao, Li-Qing; Zhou, Ping-Hong; Xu, Mei-Dong

2017-12-01

Submucosal tunneling endoscopic resection (STER) is regarded as a promising method for resection of submucosal tumors (SMTs); however, little is known about a comprehensive comparison of STER and thoracoscopic enucleation (TE). The aim of this study was to compare the clinical outcomes of STER and TE for large symptomatic SMTs in the esophagus and esophagogastric junction, as well as to analyze the factors that affect the feasibility and safety of STER. We enrolled 166 patients with large symptomatic SMTs in the esophagus and esophagogastric junction from September 2011 to March 2016 in this retrospective study. The clinicopathologic features and treatment results were collected and analyzed. En bloc resection was achieved in 84.6% of the patients in the STER group and 86.7% of the patients in the TE group (p = 0.708). Notably, the procedure time and hospital stay in the STER group were considerably shorter than those in the TE group. Tumor transverse diameter is a significant risk factor for piecemeal resection, adverse events, and technical difficulties. No recurrence or metastasis was found during a mean follow-up period of more than 2 years. Submucosal tunneling endoscopic resection is effective and safe for large SMTs in the esophagus and esophagogastric junction. This procedure has the advantage of being more minimally invasive with a shorter procedure time and hospital stay compared with TE. Submucosal tunneling endoscopic resection for tumors with a transverse diameter ≥3.5 cm and an irregular shape is associated with relatively high risk for piecemeal resection, adverse events, and technical difficulties. Copyright © 2017 American College of Surgeons. Published by Elsevier Inc. All rights reserved.

NASA Tech Briefs, April 2006

NASA Technical Reports Server (NTRS)

2006-01-01

The topics covered include: 1) Replaceable Sensor System for Bioreactor Monitoring; 2) Unitary Shaft-Angle and Shaft-Speed Sensor Assemblies; 3) Arrays of Nano Tunnel Junctions as Infrared Image Sensors; 4) Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors; 5) Compact, Precise Inertial Rotation Sensors for Spacecraft; 6) Universal Controller for Spacecraft Mechanisms; 7) The Flostation - an Immersive Cyberspace System; 8) Algorithm for Aligning an Array of Receiving Radio Antennas; 9) Single-Chip T/R Module for 1.2 GHz; 10) Quantum Entanglement Molecular Absorption Spectrum Simulator; 11) FuzzObserver; 12) Internet Distribution of Spacecraft Telemetry Data; 13) Semi-Automated Identification of Rocks in Images; 14) Pattern-Recognition Algorithm for Locking Laser Frequency; 15) Designing Cure Cycles for Matrix/Fiber Composite Parts; 16) Controlling Herds of Cooperative Robots; 17) Modification of a Limbed Robot to Favor Climbing; 18) Vacuum-Assisted, Constant-Force Exercise Device; 19) Production of Tuber-Inducing Factor; 20) Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron; 21) Tunable Filter Made From Three Coupled WGM Resonators; and 22) Dynamic Pupil Masking for Phasing Telescope Mirror Segments.

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

NASA Astrophysics Data System (ADS)

Ohsawa, Takashi; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

2014-01-01

Array operation currents in spin-transfer-torque magnetic random access memories (STT-MRAMs) that use four differential pair type magnetic tunnel junction (MTJ)-based memory cells (4T2MTJ, two 6T2MTJs and 8T2MTJ) are simulated and compared with that in SRAM. With L3 cache applications in mind, it is assumed that the memories are composed of 32 Mbyte capacity to be accessed in 64 byte in parallel. All the STT-MRAMs except for the 8T2MTJ one are designed with 32 bit fine-grained power gating scheme applied to eliminate static currents in the memory cells that are not accessed. The 8T2MTJ STT-MRAM, the cell’s design concept being not suitable for the fine-grained power gating, loads and saves 32 Mbyte data in 64 Mbyte unit per 1 Mbit sub-array in 2 × 103 cycles. It is shown that the array operation current of the 4T2MTJ STT-MRAM is 70 mA averaged in 15 ns write cycles at Vdd = 0.9 V. This is the smallest among the STT-MRAMs, about the half of the low standby power (LSTP) SRAM whose array operation current is totally dominated by the cells’ subthreshold leakage.

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

NASA Astrophysics Data System (ADS)

Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

2018-03-01

Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

Forward-bias tunneling - A limitation to bipolar device scaling

NASA Technical Reports Server (NTRS)

Del Alamo, Jesus A.; Swanson, Richard M.

1986-01-01

Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.

Scanning tunneling microscopy, orbital-mediated tunneling spectroscopy, and ultraviolet photoelectron spectroscopy of metal(II) tetraphenylporphyrins deposited from vapor.

PubMed

Scudiero, L; Barlow, D E; Mazur, U; Hipps, K W

2001-05-02

Thin films of vapor-deposited Ni(II) and Co(II) complexes of tetraphenylporphyrin (NiTPP and CoTPP) were studied supported on gold and embedded in Al-Al(2)O(3)-MTPP-Pb tunnel diodes, where M = Ni or Co. Thin films deposited onto polycrystalline gold were analyzed by ultraviolet photoelectron spectroscopy (UPS) using He I radiation. Scanning tunneling microscopy (STM) and orbital-mediated tunneling spectroscopy (STM-OMTS) were performed on submonolayer films of CoTPP and NiTPP supported on Au(111). Inelastic electron tunneling spectroscopy (IETS) and OMTS were measured in conventional tunnel diode structures. The highest occupied pi molecular orbital of the porphyrin ring was seen in both STM-OMTS and UPS at about 6.4 eV below the vacuum level. The lowest unoccupied pi molecular orbital of the porphyrin ring was observed by STM-OMTS and by IETS-OMTS to be located near 3.4 eV below the vacuum level. The OMTS spectra of CoTPP had a band near 5.2 eV (below the vacuum level) that was attributed to transient oxidation of the central Co(II) ion. That is, it is due to electron OMT via the half-filled d(z)(2) orbital present in Co(II) of CoTPP. The NiTPP OMTS spectra show no such band, consistent with the known difficulty of oxidation of the Ni(II) ion. The STM-based OMTS allowed these two porphyrin complexes to be easily distinguished. The present work is the first report of the observation of STM-OMTS, tunnel junction OMTS, and UPS of the same compounds. Scanning tunneling microscope-based orbital-mediated tunneling provides more information than UPS or tunnel junction-based OMTS and does so with molecular-scale resolution.

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

NASA Astrophysics Data System (ADS)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Josephson-junction array in an irrational magnetic field: A superconducting glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halsey, T.C.

1985-08-26

A model is used to show that a Josephson junction array in an irrational magnetic field undergoes a glass transition for finite cooling rate. At zero temperature the resultant glassy state possesses a nonzero critical current. The low-temperature behavior of the system can be modeled by a spin-wave theory. The relevance of these results for real experiments on arrays is discussed.

The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, A. L.; Li, G., E-mail: liguang1971@ahu.edu.cn, E-mail: xschen@mail.sitp.ac.cn; He, G.

2013-11-07

We have performed the study on the dependence of laser beam induced current (LBIC) spectra on the temperature for the vacancy-doped molecular beam epitaxy grown Hg{sub 1−x}Cd{sub x}Te (x = 0.31) photodiodes by both experiment and numerical simulations. It is found that the measured LBIC signal has different distributions for different temperature extents. The LBIC profile tends to be more asymmetric with increasing temperature below 170 K. But the LBIC profile becomes more symmetric with increasing temperature above 170 K. Based on a localized leakage model, it is indicated that the localized junction leakage can lead to asymmetric LBIC signal, in good agreement withmore » the experimental data. The reason is that the trap-assisted tunneling current is the dominant leakage current at the cryogenic temperature below 170 K while the diffusion current component becomes dominant above the temperature of 170 K. The results are helpful for us to better clarify the mechanism of the dependence of LBIC spectra on temperature for the applications of HgCdTe infrared photodiodes.« less

Many-junction photovoltaic device performance under non-uniform high-concentration illumination

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

2017-09-01

A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

Molecular vibrations in metal-single-molecule-metal junctions

NASA Astrophysics Data System (ADS)

Yokota, Kazumichi; Taniguchi, Masateru; Kawai, Tomoji

2010-03-01

Molecular vibrations in a metal-single-molecule-metal junction were studied based on density functional theory using a single benzenedithiolate molecule connected between gold clusters. We found that the difference in vibrational energy between an isolated benzenedithiol and the single-molecule junction is less than 3% in the energy range above 540 cm -1, where sulfur atoms contribute little to molecular vibrations. The finding implies that we can predict the peak energy in the inelastic electron tunneling spectrum of the single-molecule junction in the high energy range by vibrational analyses of isolated molecules.

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

NASA Astrophysics Data System (ADS)

Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

2017-08-01

Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Shinozaki, Motoya; Igarashi, Junta; Sato, Hideo; Ohno, Hideo

2018-04-01

We investigate free-layer size D dependence of effective anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions by homodyne-detected ferromagnetic resonance. The effective anisotropy field HK\\text{eff} monotonically increases with decreasing D for a device with the reference-layer size much larger than the free-layer size. In contrast, HK\\text{eff} does not increase in a monotonic manner for a device with the reference-layer size comparable to the free-layer size. We reveal that the difference can be explained by the variation of the anisotropy field in the vicinity of the device edge.

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

NASA Technical Reports Server (NTRS)

Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.

1992-01-01

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

PubMed

Zhang, Zhengzhong; Jiang, Liang

2014-09-12

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

DOE PAGES

Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

2015-03-24

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm 2 2-terminal monolithic perovskite/silicon multijunction solar cell with a V OC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

Neural coding using telegraphic switching of magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, Dong Ik; Bae, Gi Yoon; Oh, Heong Sik

2015-05-07

In this work, we present a synaptic transmission representing neural coding with spike trains by using a magnetic tunnel junction (MTJ). Telegraphic switching generates an artificial neural signal with both the applied magnetic field and the spin-transfer torque that act as conflicting inputs for modulating the number of spikes in spike trains. The spiking probability is observed to be weighted with modulation between 27.6% and 99.8% by varying the amplitude of the voltage input or the external magnetic field. With a combination of the reverse coding scheme and the synaptic characteristic of MTJ, an artificial function for the synaptic transmissionmore » is achieved.« less

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Xie, Zheng-Wei; Li, Ling

2017-05-01

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

Annealing free magnetic tunnel junction sensors

NASA Astrophysics Data System (ADS)

Knudde, S.; Leitao, D. C.; Cardoso, S.; Freitas, P. P.

2017-04-01

Annealing is a major step in the fabrication of magnetic tunnel junctions (MTJs). It sets the exchange bias between the pinned and antiferromagnetic layers, and helps to increase the tunnel magnetoresistance (TMR) in both amorphous and crystalline junctions. Recent research on MTJs has focused on MgO-based structures due to their high TMR. However, the strict process control and mandatory annealing step can limit the scope of the application of these structures as sensors. In this paper, we present AlOx-based MTJs that are produced by ion beam sputtering and remote plasma oxidation and show optimum transport properties with no annealing. The microfabricated devices show TMR values of up to 35% and using NiFe/CoFeB free layers provides tunable linear ranges, leading to coercivity-free linear responses with sensitivities of up to 5.5%/mT. The top-pinned synthetic antiferromagnetic reference shows a stability of about 30 mT in the microfabricated devices. Sensors with linear ranges of up to 60 mT are demonstrated. This paves the way for the integration of MTJ sensors in heat-sensitive applications such as flexible substrates, or for the design of low-footprint on-chip multiaxial sensing devices.

Electronic components embedded in a single graphene nanoribbon.

PubMed

Jacobse, P H; Kimouche, A; Gebraad, T; Ervasti, M M; Thijssen, J M; Liljeroth, P; Swart, I

2017-07-25

The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate contacts and more functionality directly into single ribbons by using heterostructures. Here, we use the on-surface synthesis approach to fabricate a metal-semiconductor junction and a tunnel barrier in a single graphene nanoribbon consisting of 5- and 7-atom wide segments. We characterize the atomic scale geometry and electronic structure by combined atomic force microscopy, scanning tunneling microscopy, and conductance measurements complemented by density functional theory and transport calculations. These junctions are relevant for developing contacts in all-graphene nanoribbon devices and creating diodes and transistors, and act as a first step toward complete electronic devices built into a single graphene nanoribbon.Adding functional electronic components to graphene nanoribbons requires precise control over their atomic structure. Here, the authors use a bottom-up approach to build a metal-semiconductor junction and a tunnel barrier directly into a single graphene nanoribbon, an exciting development for graphene-based electronic devices.

Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Varghani, Ali; Peiravi, Ali; Moradi, Farshad

2018-04-01

The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ (I-MTJ) such as lower switching current, circular cell shape that facilitates manufacturability in smaller technology nodes, large thermal stability, smaller cell size, and lower dipole field interaction between adjacent cells make it a promising candidate as a universal memory. However, for small MTJ cell sizes, the perpendicular technology requires new materials with high polarization and low damping factor as well as low resistance area product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene-based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/nickel (Co/Ni) multilayer as magnetic layers is proposed in this paper. The proposed junction benefits from enough Tunneling Magnetoresistance Ratio (TMR), low resistance area product, low write voltage, and low power consumption that make it suitable for 8 nm technology node.

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

NASA Astrophysics Data System (ADS)

Miura, Sadahiko; Honjo, Hiroaki; Kinoshita, Keizo; Tokutome, Keiichi; Koike, Hiroaki; Ikeda, Shoji; Endoh, Tetsuo; Ohno, Hideo

2015-04-01

Perpendicular-anisotropy magnetic tunnel junctions (MTJs) were prepared on four substrate geometries, i.e., directly on the axis of the bottom electrode contact, directly off the axis of the bottom electrode contact, on the axis of the bottom electrode contact with a polished bottom electrode, and off the axis of the bottom electrode contact with a polished bottom electrode. Electrical shorts were observed for direct on-axis geometry at a certain extent, whereas there were no electrical shorts for the other three geometries. The MR ratio/σR, JC0, and thermal stability factor of the devices for polish on-axis geometry were almost the same as those for polish off-axis geometry. From TEM observations of the polish on-axis device, the interface between the bottom contact and the base electrode was determined to be rough, whereas the MgO barrier layer was determined to be smooth, indicating that the polish process was effective for smooth magnetic tunnel junction fabrication over the bottom contact. MTJs for polish on-axis geometry eliminated the base electrode resistance and increased the magnetoresistance ratio. This technology contributes to the higher density of spin transfer torque magnetic random access memory.

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Multiscale examination and modeling of electron transport in nanoscale materials and devices

NASA Astrophysics Data System (ADS)

Banyai, Douglas R.

For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) in use today. Several new transistor designs, some designed and built here at Michigan Tech, involve electrons tunneling their way through arrays of nanoparticles. We use a multi-scale approach to model these devices and study their behavior. For investigating the tunneling characteristics of the individual junctions, we use a first-principles approach to model conduction between sub-nanometer gold particles. To estimate the change in energy due to the movement of individual electrons, we use the finite element method to calculate electrostatic capacitances. The kinetic Monte Carlo method allows us to use our knowledge of these details to simulate the dynamics of an entire device---sometimes consisting of hundreds of individual particles---and watch as a device 'turns on' and starts conducting an electric current. Scanning tunneling microscopy (STM) and the closely related scanning tunneling spectroscopy (STS) are a family of powerful experimental techniques that allow for the probing and imaging of surfaces and molecules at atomic resolution. However, interpretation of the results often requires comparison with theoretical and computational models. We have developed a new method for calculating STM topographs and STS spectra. This method combines an established method for approximating the geometric variation of the electronic density of states, with a modern method for calculating spin-dependent tunneling currents, offering a unique balance between accuracy and accessibility.

Multicontrol Over Graphene–Molecule Hetereojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yun-Peng; Fry, James N.; Cheng, Hai-Ping

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi two-dimensional systems. Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. In this work, we study theoretically vertical tunneling junctions that consist of a monolayer of photoswitchable aryl azobenzene molecules sandwiched between two sheets of graphene. Azobenzene molecules transform between trans and cis conformations upon photoexcitation, thus adding a second knob that enhances the control over physical properties of the junction. Using first-principles methods within the density functional framework, we perform simulations with the inclusion of fieldmore » effects for both trans and cis configurations. Lastly, we find that the interference of interface states resulting from molecule–graphene interactions at the Fermi energy introduces a dual-peak pattern in the transmission functions and dominates the transport properties of gate junctions, shedding new light on interfacial processes.« less

Four-junction AlGaAs/GaAs laser power converter

NASA Astrophysics Data System (ADS)

Huang, Jie; Sun, Yurun; Zhao, Yongming; Yu, Shuzhen; Dong, Jianrong; Xue, Jiping; Xue, Chi; Wang, Jin; Lu, Yunqing; Ding, Yanwen

2018-04-01

Four-junction AlGaAs/GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As heterostructure tunnel junctions (TJs) have been designed and grown by metal-organic chemical vapor deposition (MOCVD) for converting the power of 808 nm lasers. A maximum conversion efficiency η c of 56.9% ± 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current–voltage (I–V) characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC. Project financially supported by the National Natural Science Foundation of China (No. 61376065) and Zhongtian Technology Group Co. Ltd.

Roles of vacuum tunnelling and contact mechanics in single-molecule thermopower

NASA Astrophysics Data System (ADS)

Tsutsui, Makusu; Yokota, Kazumichi; Morikawa, Takanori; Taniguchi, Masateru

2017-03-01

Molecular junction is a chemically-defined nanostructure whose discrete electronic states are expected to render enhanced thermoelectric figure of merit suitable for energy-harvesting applications. Here, we report on geometrical dependence of thermoelectricity in metal-molecule-metal structures. We performed simultaneous measurements of the electrical conductance and thermovoltage of aromatic molecules having different anchoring groups at room temperature in vacuum. We elucidated the mutual contributions of vacuum tunnelling on thermoelectricity in the short molecular bridges. We also found stretching-induced thermoelectric voltage enhancement in thiol-linked single-molecule bridges along with absence of the pulling effects in diamine counterparts, thereby suggested that the electromechanical effect would be a rather universal phenomenon in Au-S anchored molecular junctions that undergo substantial metal-molecule contact elongation upon stretching. The present results provide a novel concept for molecular design to achieve high thermopower with single-molecule junctions.

Quantum-statistical theory of microwave detection using superconducting tunnel junctions

NASA Astrophysics Data System (ADS)

Deviatov, I. A.; Kuzmin, L. S.; Likharev, K. K.; Migulin, V. V.; Zorin, A. B.

1986-09-01

A quantum-statistical theory of microwave and millimeter-wave detection using superconducting tunnel junctions is developed, with a rigorous account of quantum, thermal, and shot noise arising from fluctuation sources associated with the junctions, signal source, and matching circuits. The problem of the noise characterization in the quantum sensitivity range is considered and a general noise parameter Theta(N) is introduced. This parameter is shown to be an adequate figure of merit for most receivers of interest while some devices can require a more complex characterization. Analytical expressions and/or numerically calculated plots for Theta(N) are presented for the most promising detection modes including the parametric amplification, heterodyne mixing, and quadratic videodetection, using both the quasiparticle-current and the Cooper-pair-current nonlinearities. Ultimate minimum values of Theta(N) for each detection mode are compared and found to be in agreement with limitations imposed by the quantum-mechanical uncertainty principle.

Modeling Bloch oscillations in nanoscale Josephson junctions.

PubMed

Vora, Heli; Kautz, R L; Nam, S W; Aumentado, J

2017-08-01

Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = ( n/m )2 ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic ( m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations.

Modeling Bloch oscillations in nanoscale Josephson junctions

PubMed Central

Vora, Heli; Kautz, R. L.; Nam, S. W.; Aumentado, J.

2018-01-01

Bloch oscillations in nanoscale Josephson junctions with a Coulomb charging energy comparable to the Josephson coupling energy are explored within the context of a model previously considered by Geigenmüller and Schön that includes Zener tunneling and treats quasiparticle tunneling as an explicit shot-noise process. The dynamics of the junction quasicharge are investigated numerically using both Monte Carlo and ensemble approaches to calculate voltage-current characteristics in the presence of microwaves. We examine in detail the origin of harmonic and subharmonic Bloch steps at dc biases I = (n/m)2ef induced by microwaves of frequency f and consider the optimum parameters for the observation of harmonic (m = 1) steps. We also demonstrate that the GS model allows a detailed semiquantitative fit to experimental voltage-current characteristics previously obtained at the Chalmers University of Technology, confirming and strengthening the interpretation of the observed microwave-induced steps in terms of Bloch oscillations. PMID:29577106

Multicontrol Over Graphene–Molecule Hetereojunctions

DOE PAGES

Wang, Yun-Peng; Fry, James N.; Cheng, Hai-Ping

2017-09-15

The vertical configuration is a powerful tool recently developed experimentally to investigate field effects in quasi two-dimensional systems. Prototype graphene-based vertical tunneling transistors can achieve an extraordinary control over current density utilizing gate voltages. In this work, we study theoretically vertical tunneling junctions that consist of a monolayer of photoswitchable aryl azobenzene molecules sandwiched between two sheets of graphene. Azobenzene molecules transform between trans and cis conformations upon photoexcitation, thus adding a second knob that enhances the control over physical properties of the junction. Using first-principles methods within the density functional framework, we perform simulations with the inclusion of fieldmore » effects for both trans and cis configurations. Lastly, we find that the interference of interface states resulting from molecule–graphene interactions at the Fermi energy introduces a dual-peak pattern in the transmission functions and dominates the transport properties of gate junctions, shedding new light on interfacial processes.« less

Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

PubMed Central

Tang, Y. -H.; Chu, F. -C.; Kioussis, Nicholas

2015-01-01

We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds. PMID:26095146

Reading magnetic ink patterns with magnetoresistive sensors

NASA Astrophysics Data System (ADS)

Merazzo, K. J.; Costa, T.; Franco, F.; Ferreira, R.; Zander, M.; Türr, M.; Becker, T.; Freitas, P. P.; Cardoso, S.

2018-05-01

Information storage and monitoring relies on sensitive transducers with high robustness and reliability. This paper shows a methodology enabling the qualification of magnetic sensors for magnetic pattern readout, in applications different than hard disk magnetic recording. A magnetic tunnel junction MTJ sensor was incorporated in a reader setup for recognition of the magnetization of patterned arrays made of CoCrPt thin films and magnetic ink. The geometry of the sensor (in particular, the footprint and vertical distance to the media) was evaluated for two sensor configurations. The readout conditions were optimized to cope for variable media field intensity, resulting from CoCrPt film or magnetic ink thickness, with fixed reading distance and dimensions of the pattern. The calibration of the ink magnetic signal could be inferred from the analytical calculations carried out to validate the CoCrPt results.

Conversion Gain in MM-Wave Quasiparticle Heterodyne Mixers,

DTIC Science & Technology

1981-01-01

superconductor-insulating oxide -superconductor SIS (Josephson) tunnel junc- tions [4-141. Due to the singularity in density of states of quasiparticles in the...superconductors on two sides of the oxide barrier, there is a sudden onset of quasiparticle tunneling current at bias voltage near the full...Phillips, and D. P. Woody, ’Low noise 115 GHz mixing in supercon- ducting oxide barrier tunnel junctions,’ App. Phys. Lett., vol. 34, pp. 347-349, March

Joint Services Electronics Program.

DTIC Science & Technology

1983-04-01

shape of the photon-assisted tunneling features and of their dependence on laser power. The cleanest test of the theory was made at 4.2 K, above T...Properties of Small-area Tunnel Junctions by research unit 2; Nonequilibrium Switching Phenomena on Picosecond Time Scales by research unit 2; Liquid...ocean, with the lower ends grounded or joined by a third conductor in a tunnel through the mountain has been suc-Tested. A theoretical and experimental

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

NASA Astrophysics Data System (ADS)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

PubMed

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Photon-assisted tunneling through a quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kouwenhoven, L.P.; Jauhar, S.; McCormick, K.

1994-07-15

We study single-electron tunneling in a two-junction device in the presence of microwave radiation. We introduce a model for numerical simulations that extends the Tien-Gordon theory for photon-assisted tunneling to encompass correlated single-electron tunneling. We predict sharp current jumps which reflect the discrete photon energy [ital hf], and a zero-bias current whose sign changes when an electron is added to the central island of the device. Measurements on split-gate quantum dots show microwave-induced features that are in good agreement with the model.

Tandem junction amorphous silicon solar cells

DOEpatents

Hanak, Joseph J.

1981-01-01

An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

Analysis of long-channel nanotube field-effect-transistors (NT FETs)

NASA Technical Reports Server (NTRS)

Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

2001-01-01

This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

NASA Astrophysics Data System (ADS)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Y., E-mail: yoshiaki.saito@toshiba.co.jp; Ishikawa, M.; Sugiyama, H.

2015-05-07

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. Tomore » demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.« less

Niobium tunnel junction fabrication using e-gun evaporation and SNAP

NASA Astrophysics Data System (ADS)

Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

1990-11-01

We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

Cucurbituril mediated single molecule detection and identification via recognition tunneling.

PubMed

Xiao, Bohuai; Liang, Feng; Liu, Simin; Im, JongOne; Li, Yunchuan; Liu, Jing; Zhang, Bintian; Zhou, Jianghao; He, Jin; Chang, Shuai

2018-06-08

Recognition tunneling (RT) is an emerging technique for investigating single molecules in a tunnel junction. We have previously demonstrated its capability of single molecule detection and identification, as well as probing the dynamics of intermolecular bonding at the single molecule level. Here by introducing cucurbituril as a new class of recognition molecule, we demonstrate a powerful platform for electronically investigating the host-guest chemistry at single molecule level. In this report, we first investigated the single molecule electrical properties of cucurbituril in a tunnel junction. Then we studied two model guest molecules, aminoferrocene and amantadine, which were encapsulated by cucurbituril. Small differences in conductance and lifetime can be recognized between the host-guest complexes with the inclusion of different guest molecules. By using a machine learning algorithm to classify the RT signals in a hyper dimensional space, the accuracy of guest molecule recognition can be significantly improved, suggesting the possibility of using cucurbituril molecule for single molecule identification. This work enables a new class of recognition molecule for RT technique and opens the door for detecting a vast variety of small molecules by electrical measurements.