two-dimensional photodetector array: Topics by Science.gov

Sample records for two-dimensional photodetector array

Method and apparatus for coherent imaging of infrared energy

DOEpatents

Hutchinson, Donald P.

1998-01-01

A coherent camera system performs ranging, spectroscopy, and thermal imaging. Local oscillator radiation is combined with target scene radiation to enable heterodyne detection by the coherent camera's two-dimensional photodetector array. Versatility enables deployment of the system in either a passive mode (where no laser energy is actively transmitted toward the target scene) or an active mode (where a transmitting laser is used to actively illuminate the target scene). The two-dimensional photodetector array eliminates the need to mechanically scan the detector. Each element of the photodetector array produces an intermediate frequency signal that is amplified, filtered, and rectified by the coherent camera's integrated circuitry. By spectroscopic examination of the frequency components of each pixel of the detector array, a high-resolution, three-dimensional or holographic image of the target scene is produced for applications such as air pollution studies, atmospheric disturbance monitoring, and military weapons targeting.
Method and apparatus for coherent imaging of infrared energy

DOEpatents

Hutchinson, D.P.

1998-05-12

A coherent camera system performs ranging, spectroscopy, and thermal imaging. Local oscillator radiation is combined with target scene radiation to enable heterodyne detection by the coherent camera`s two-dimensional photodetector array. Versatility enables deployment of the system in either a passive mode (where no laser energy is actively transmitted toward the target scene) or an active mode (where a transmitting laser is used to actively illuminate the target scene). The two-dimensional photodetector array eliminates the need to mechanically scan the detector. Each element of the photodetector array produces an intermediate frequency signal that is amplified, filtered, and rectified by the coherent camera`s integrated circuitry. By spectroscopic examination of the frequency components of each pixel of the detector array, a high-resolution, three-dimensional or holographic image of the target scene is produced for applications such as air pollution studies, atmospheric disturbance monitoring, and military weapons targeting. 8 figs.
Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

PubMed Central

Zheng, Wenshan; Xie, Tian; Zhou, Yu; Chen, Y.L.; Jiang, Wei; Zhao, Shuli; Wu, Jinxiong; Jing, Yumei; Wu, Yue; Chen, Guanchu; Guo, Yunfan; Yin, Jianbo; Huang, Shaoyun; Xu, H.Q.; Liu, Zhongfan; Peng, Hailin

2015-01-01

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2 V−1 s−1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W−1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits. PMID:25898022
Multiparallel Three-Dimensional Optical Microscopy

NASA Technical Reports Server (NTRS)

Nguyen, Lam K.; Price, Jeffrey H.; Kellner, Albert L.; Bravo-Zanoquera, Miguel

2010-01-01

Multiparallel three-dimensional optical microscopy is a method of forming an approximate three-dimensional image of a microscope sample as a collection of images from different depths through the sample. The imaging apparatus includes a single microscope plus an assembly of beam splitters and mirrors that divide the output of the microscope into multiple channels. An imaging array of photodetectors in each channel is located at a different distance along the optical path from the microscope, corresponding to a focal plane at a different depth within the sample. The optical path leading to each photodetector array also includes lenses to compensate for the variation of magnification with distance so that the images ultimately formed on all the photodetector arrays are of the same magnification. The use of optical components common to multiple channels in a simple geometry makes it possible to obtain high light-transmission efficiency with an optically and mechanically simple assembly. In addition, because images can be read out simultaneously from all the photodetector arrays, the apparatus can support three-dimensional imaging at a high scanning rate.
Parallel phase-sensitive three-dimensional imaging camera

DOEpatents

Smithpeter, Colin L.; Hoover, Eddie R.; Pain, Bedabrata; Hancock, Bruce R.; Nellums, Robert O.

2007-09-25

An apparatus is disclosed for generating a three-dimensional (3-D) image of a scene illuminated by a pulsed light source (e.g. a laser or light-emitting diode). The apparatus, referred to as a phase-sensitive 3-D imaging camera utilizes a two-dimensional (2-D) array of photodetectors to receive light that is reflected or scattered from the scene and processes an electrical output signal from each photodetector in the 2-D array in parallel using multiple modulators, each having inputs of the photodetector output signal and a reference signal, with the reference signal provided to each modulator having a different phase delay. The output from each modulator is provided to a computational unit which can be used to generate intensity and range information for use in generating a 3-D image of the scene. The 3-D camera is capable of generating a 3-D image using a single pulse of light, or alternately can be used to generate subsequent 3-D images with each additional pulse of light.
Large angle solid state position sensitive x-ray detector system

DOEpatents

Kurtz, David S.; Ruud, Clay O.

1998-01-01

A method and apparatus for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided.
Large angle solid state position sensitive x-ray detector system

DOEpatents

Kurtz, D.S.; Ruud, C.O.

1998-03-03

A method and apparatus for x-ray measurement of certain properties of a solid material are disclosed. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided. 7 figs.
Large angle solid state position sensitive x-ray detector system

DOEpatents

Kurtz, D.S.; Ruud, C.O.

1998-07-21

A method and apparatus are disclosed for x-ray measurement of certain properties of a solid material. In distinction to known methods and apparatus, this invention employs a specific fiber-optic bundle configuration, termed a reorganizer, itself known for other uses, for coherently transmitting visible light originating from the scintillation of diffracted x-radiation from the solid material gathered along a substantially one dimensional linear arc, to a two-dimensional photo-sensor array. The two-dimensional photodetector array, with its many closely packed light sensitive pixels, is employed to process the information contained in the diffracted radiation and present the information in the form of a conventional x-ray diffraction spectrum. By this arrangement, the angular range of the combined detector faces may be increased without loss of angular resolution. Further, the prohibitively expensive coupling together of a large number of individual linear diode photodetectors, which would be required to process signals generated by the diffracted radiation, is avoided. 7 figs.
Smart photodetector arrays for error control in page-oriented optical memory

NASA Astrophysics Data System (ADS)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data modulation and error correction coding for the purpose of error control in the POM system. These techniques are adapted, where possible, for 2D data and evaluated as to their suitability for a SPA implementation in terms of BER, code rate, decoder time and pixel complexity. Our analysis shows that differential data modulation combined with relatively simple block codes known as array codes provide a powerful means to achieve the desired data transfer rates while reducing error rates to industry requirements. Finally, we demonstrate the first smart photodetector array designed to perform parallel error correction on an entire page of data and satisfy the sustained data rates of page-oriented optical memories. Our implementation integrates a monolithic PN photodiode array and differential input receiver for optoelectronic signal conversion with a cluster error correction code using 0.35-mum CMOS. This approach provides high sensitivity, low electrical power dissipation, and fast parallel correction of 2 x 2-bit cluster errors in an 8 x 8 bit code block to achieve corrected output data rates scalable to 102 Gbps in the current technology increasing to 1.88 Tbps in 0.1-mum CMOS.
Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.
Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.
Single-pixel camera with one graphene photodetector.

PubMed

Li, Gongxin; Wang, Wenxue; Wang, Yuechao; Yang, Wenguang; Liu, Lianqing

2016-01-11

Consumer cameras in the megapixel range are ubiquitous, but the improvement of them is hindered by the poor performance and high cost of traditional photodetectors. Graphene, a two-dimensional micro-/nano-material, recently has exhibited exceptional properties as a sensing element in a photodetector over traditional materials. However, it is difficult to fabricate a large-scale array of graphene photodetectors to replace the traditional photodetector array. To take full advantage of the unique characteristics of the graphene photodetector, in this study we integrated a graphene photodetector in a single-pixel camera based on compressive sensing. To begin with, we introduced a method called laser scribing for fabrication the graphene. It produces the graphene components in arbitrary patterns more quickly without photoresist contamination as do traditional methods. Next, we proposed a system for calibrating the optoelectrical properties of micro/nano photodetectors based on a digital micromirror device (DMD), which changes the light intensity by controlling the number of individual micromirrors positioned at + 12°. The calibration sensitivity is driven by the sum of all micromirrors of the DMD and can be as high as 10(-5)A/W. Finally, the single-pixel camera integrated with one graphene photodetector was used to recover a static image to demonstrate the feasibility of the single-pixel imaging system with the graphene photodetector. A high-resolution image can be recovered with the camera at a sampling rate much less than Nyquist rate. The study was the first demonstration for ever record of a macroscopic camera with a graphene photodetector. The camera has the potential for high-speed and high-resolution imaging at much less cost than traditional megapixel cameras.
Capacitively coupled pickup in MCP-based photodetectors using a conductive metallic anode

NASA Astrophysics Data System (ADS)

Angelico, E.; Seiss, T.; Adams, B.; Elagin, A.; Frisch, H.; Spieglan, E.

2017-02-01

We have designed and tested a robust 20×20 cm2 thin metal film internal anode capacitively coupled to an external array of signal pads or micro-strips for use in fast microchannel plate photodetectors. The internal anode, in this case a 10 nm-thick NiCr film deposited on a 96% pure Al2O3 3 mm-thick ceramic plate and connected to HV ground, provides the return path for the electron cascade charge. The multi-channel pickup array consists of a printed-circuit card or glass plate with metal signal pickups on one side and the signal ground plane on the other. The pickup can be put in close proximity to the bottom outer surface of the sealed photodetector, with no electrical connections through the photodetector hermetic vacuum package other than a single ground connection to the internal anode. Two pickup patterns were tested using a small commercial MCP-PMT as the signal source: 1) parallel 50 Ω 25-cm-long micro-strips with an analog bandwidth of 1.5 GHz, and 2) a 20×20 cm2 array of 2-dimensional square 'pads' with sides of 1.27 cm or 2.54 cm. The rise-time of the fast input pulse is maintained for both pickup patterns. For the pad pattern, we observe 80% of the directly coupled amplitude. For the strip pattern we measure 34% of the directly coupled amplitude on the central strip of a broadened signal. The physical decoupling of the photodetector from the pickup pattern allows easy customization for different applications while maintaining high analog bandwidth.
Organic photodetectors and their applications for hemispherical imaging focal plane arrays

NASA Astrophysics Data System (ADS)

Xu, Xin

Softness of organic semiconducting materials holds promise for fabricating optoelectronic devices and circuits on nonplanar surfaces. The low growth temperature of organic small molecules also allows for the deposition onto a plastic substrate, which has the potential for significantly lowering the fabrication cost. However, the softness of organic small molecules can become problematic. Most of the well-established patterning techniques in the semiconductor industry are not suitable for patterning organic-based devices. High temperatures, high pressures, exposure to wet chemicals or high-energy particles that may exist in the conventional patterning approaches can damage the organic active layers. Although methods for large area patterning of organic electronics onto planar substrates have been demonstrated, in this thesis we extend the patterning capability to curved surfaces by using a novel three dimensional (3D) cold welding method. We use 3D cold welding to fabricate a hemispherical focal plane array (FPA) for compact imaging systems that mimic the architecture and function of the human eye. A 10 kilopixel organic photodetector FPA is thus demonstrated on a 1 cm radius hemisphere. By patterning brittle yet transparent indium tin oxide anodes instead of semitransparent metal anodes on the hemispheres, the detectivity of the FPA is improved. We introduce a sensitive hybrid photodetector employing a carbon nanotube/small molecular organic junction with a broad spectral response extending into the near infrared. Since the photodetector array shows an increased noise level with the array size, integrated arrays of organic photodetectors and thin film transistors as switches are demonstrated.
Zonal wavefront sensor with reduced number of rows in the detector array.

PubMed

Boruah, Bosanta R; Das, Abhijit

2011-07-10

In this paper, we describe a zonal wavefront sensor in which the photodetector array can have a smaller number of rows. The test wavefront is incident on a two-dimensional array of diffraction gratings followed by a single focusing lens. The periodicity and the orientation of the grating rulings of each grating can be chosen such that the +1 order beam from the gratings forms an array of focal spots in the detector plane. We show that by using a square array of zones, it is possible to generate an array of +1 order focal spots having a smaller number of rows, thus reducing the height of the required detector array. The phase profile of the test wavefront can be estimated by measuring the displacements of the +1 order focal spots for the test wavefront relative to the +1 order focal spots for a plane reference wavefront. The narrower width of the photodetector array can offer several advantages, such as a faster frame rate of the wavefront sensor, a reduced amount of cross talk between the nearby detector zones, and a decrease in the maximum thermal noise. We also present experimental results of a proof-of-concept experimental arrangement using the proposed wavefront sensing scheme. © 2011 Optical Society of America
Phase Grating Design for a Dual-Band Snapshot Imaging Spectrometer

NASA Astrophysics Data System (ADS)

Scholl, James F.; Dereniak, Eustace L.; Descour, Michael R.; Tebow, Christopher P.; Volin, Curtis E.

2003-01-01

Infrared spectral features have proved useful in the identification of threat objects. Dual-band focal-plane arrays (FPAs) have been developed in which each pixel consists of superimposed midwave and long-wave photodetectors [Dyer and Tidrow, Conference on Infrared Detectors and Focal Plane Arrays (SPIE, Bellingham, Wash., 1999), pp. 434 -440 . Combining dual-band FPAs with imaging spectrometers capable of interband hyperspectral resolution greatly improves spatial target discrimination. The computed-tomography imaging spectrometer (CTIS) ] [Descour and Dereniak, Appl. Opt. 34, 4817 -4826 (1995) has proved effective in producing hyperspectral images in a single spectral region. Coupling the CTIS with a dual-band detector can produce two hyperspectral data cubes simultaneously. We describe the design of two-dimensional, surface-relief, computer-generated hologram dispersers that permit image information in these two bands simultaneously.
Integrated filter and detector array for spectral imaging

NASA Technical Reports Server (NTRS)

Labaw, Clayton C. (Inventor)

1992-01-01

A spectral imaging system having an integrated filter and photodetector array is disclosed. The filter has narrow transmission bands which vary in frequency along the photodetector array. The frequency variation of the transmission bands is matched to, and aligned with, the frequency variation of a received spectral image. The filter is deposited directly on the photodetector array by a low temperature deposition process. By depositing the filter directly on the photodetector array, permanent alignment is achieved for all temperatures, spectral crosstalk is substantially eliminated, and a high signal to noise ratio is achieved.
Cherenkov radiation-based three-dimensional position-sensitive PET detector: A Monte Carlo study.

PubMed

Ota, Ryosuke; Yamada, Ryoko; Moriya, Takahiro; Hasegawa, Tomoyuki

2018-05-01

Cherenkov radiation has recently received attention due to its prompt emission phenomenon, which has the potential to improve the timing performance of radiation detectors dedicated to positron emission tomography (PET). In this study, a Cherenkov-based three-dimensional (3D) position-sensitive radiation detector was proposed, which is composed of a monolithic lead fluoride (PbF 2 ) crystal and a photodetector array of which the signals can be readout independently. Monte Carlo simulations were performed to estimate the performance of the proposed detector. The position- and time resolution were evaluated under various practical conditions. The radiator size and various properties of the photodetector, e.g., readout pitch and single photon timing resolution (SPTR), were parameterized. The single photon time response of the photodetector was assumed to be a single Gaussian for the simplification. The photo detection efficiency of the photodetector was ideally 100% for all wavelengths. Compton scattering was included in simulations, but partly analyzed. To estimate the position at which a γ-ray interacted in the Cherenkov radiator, the center-of-gravity (COG) method was employed. In addition, to estimate the depth-of-interaction (DOI) principal component analysis (PCA), which is a multivariate analysis method and has been used to identify the patterns in data, was employed. The time-space distribution of Cherenkov photons was quantified to perform PCA. To evaluate coincidence time resolution (CTR), the time difference of two independent γ-ray events was calculated. The detection time was defined as the first photon time after the SPTR of the photodetector was taken into account. The position resolution on the photodetector plane could be estimated with high accuracy, by using a small number of Cherenkov photons. Moreover, PCA showed an ability to estimate the DOI. The position resolution heavily depends on the pitch of the photodetector array and the radiator thickness. If the readout pitch were ideally 0 and practically 3 mm, a full-width at half-maximum (FWHM) of 0.348 and 1.92 mm was achievable with a 10-mm-thick PbF 2 crystal, respectively. Furthermore, first-order correlation could be observed between the primary principal component and the true DOI. To obtain a coincidence timing resolution better than 100-ps FWHM with a 20-mm-thick PbF 2 crystal, a photodetector with SPTR of better than σ = 30 ps was necessary. From these results, the improvement of SPTR allows us to achieve CTR better than 100-ps FWHM, even in the case where a 20-mm-thick radiator is used. Our proposed detector has the potential to estimate the 3D interaction position of γ-rays in the radiator, using only time and space information of Cherenkov photons. © 2018 American Association of Physicists in Medicine.
Enhanced light absorption of solar cells and photodetectors by diffraction

DOEpatents

Zaidi, Saleem H.; Gee, James M.

2005-02-22

Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are shown to improve performance of solar cells. Surface reflection can be tailored for either broadband, or narrow-band spectral absorption. Enhanced absorption is achieved by efficient optical coupling into obliquely propagating transmitted diffraction orders. Subwavelength one-dimensional structures are designed for polarization-dependent, wavelength-selective absorption in solar cells and photodetectors, while two-dimensional structures are designed for polarization-independent, wavelength-selective absorption therein. Suitable one and two-dimensional subwavelength periodic structures can also be designed for broadband spectral absorption in solar cells and photodetectors. If reactive ion etching (RIE) processes are used to form the grating, RIE-induced surface damage in subwavelength structures can be repaired by forming junctions using ion implantation methods. RIE-induced surface damage can also be removed by post RIE wet-chemical etching treatments.
Emerging terahertz photodetectors based on two-dimensional materials

NASA Astrophysics Data System (ADS)

Yang, Jie; Qin, Hua; Zhang, Kai

2018-01-01

Inspired by the innovations in photonics and nanotechnology, the remarkable properties of two-dimensional (2D) materials have renewed interest for the development of terahertz (THz) photodetectors. The versatility of these materials enables ultrafast and ultrasensitive photodetection of THz radiation at room temperature. The atomically thin characteristic together with van der Waals interactions among the layers make it easy to scaling down and integrate with other 2D materials based devices, as well as silicon chips. Efforts have increased fast in the past decade in developing proof-of-concept and the further prospective THz photodetectors based on 2D materials. Here, the recent progress on the exploring of THz photodetectors based on 2D materials is reviewed. We summarized the THz photodetectors under different physical mechanism and introduced the state-of-the-art THz photodetectors based on various promising 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP) and topological insulators (TIs). A brief discussion on the remaining challenges and a perspective of the 2D materials based THz photodetectors are also given.

Dual band QWIP focal plane array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D. (Inventor); Choi, Kwong Kit (Inventor); Bandara, Sumith V. (Inventor)

2005-01-01

A quantum well infrared photodetector (QWIP) that provides two-color image sensing. Two different quantum wells are configured to absorb two different wavelengths. The QWIPs are arrayed in a focal plane array (FPA). The two-color QWIPs are selected for readout by selective electrical contact with the two different QWIPs or by the use of two different wavelength sensitive gratings.
Polarization-independent high-speed photodetector based on a two-dimensional focusing grating

NASA Astrophysics Data System (ADS)

Duan, Xiaofeng; Chen, Hailang; Huang, Yongqing; Liu, Kai; Cai, Shiwei; Ren, Xiaomin

2018-01-01

We demonstrate a reflection-enhanced high-speed photodetector, which integrated a mushroom-mesa p-i-n structure on a two-dimensional (2D) nonperiodic focusing grating. Mushroom-mesa p-i-n photodetectors exhibit a high frequency response owing to their low resistance capacity (RC) time constant. 2D nonperiodic focusing gratings not only can increase the external quantum efficiency of the device owing to their reflecting and focusing abilities, but also are not sensitive to the polarization of the incident light. The external quantum efficiency of this device is 44.71% and the measured 3 dB bandwidth is up to 32 GHz.
Linear encoding device

NASA Technical Reports Server (NTRS)

Leviton, Douglas B. (Inventor)

1993-01-01

A Linear Motion Encoding device for measuring the linear motion of a moving object is disclosed in which a light source is mounted on the moving object and a position sensitive detector such as an array photodetector is mounted on a nearby stationary object. The light source emits a light beam directed towards the array photodetector such that a light spot is created on the array. An analog-to-digital converter, connected to the array photodetector is used for reading the position of the spot on the array photodetector. A microprocessor and memory is connected to the analog-to-digital converter to hold and manipulate data provided by the analog-to-digital converter on the position of the spot and to compute the linear displacement of the moving object based upon the data from the analog-to-digital converter.
Two-dimensional optoelectronic interconnect-processor and its operational bit error rate

NASA Astrophysics Data System (ADS)

Liu, J. Jiang; Gollsneider, Brian; Chang, Wayne H.; Carhart, Gary W.; Vorontsov, Mikhail A.; Simonis, George J.; Shoop, Barry L.

2004-10-01

Two-dimensional (2-D) multi-channel 8x8 optical interconnect and processor system were designed and developed using complementary metal-oxide-semiconductor (CMOS) driven 850-nm vertical-cavity surface-emitting laser (VCSEL) arrays and the photodetector (PD) arrays with corresponding wavelengths. We performed operation and bit-error-rate (BER) analysis on this free-space integrated 8x8 VCSEL optical interconnects driven by silicon-on-sapphire (SOS) circuits. Pseudo-random bit stream (PRBS) data sequence was used in operation of the interconnects. Eye diagrams were measured from individual channels and analyzed using a digital oscilloscope at data rates from 155 Mb/s to 1.5 Gb/s. Using a statistical model of Gaussian distribution for the random noise in the transmission, we developed a method to compute the BER instantaneously with the digital eye-diagrams. Direct measurements on this interconnects were also taken on a standard BER tester for verification. We found that the results of two methods were in the same order and within 50% accuracy. The integrated interconnects were investigated in an optoelectronic processing architecture of digital halftoning image processor. Error diffusion networks implemented by the inherently parallel nature of photonics promise to provide high quality digital halftoned images.
GaAs optoelectronic neuron arrays

NASA Technical Reports Server (NTRS)

Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

1993-01-01

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.
A Hybrid, Large-Scale Wireless Sensor Network for Real-Time Acquisition and Tracking

DTIC Science & Technology

2007-06-01

multicolor, Quantum Well Infrared Photodetector ( QWIP ), step-stare, large-format Focal Plane Array (FPA) is proposed and evaluated through performance...Photodetector ( QWIP ), step-stare, large-format Focal Plane Array (FPA) is proposed and evaluated through performance analysis. The thesis proposes...7 1. Multi-color IR Sensors - Operational Advantages ...........................8 2. Quantum-Well IR Photodetector ( QWIP
Strain-compensated infrared photodetector and photodetector array

DOEpatents

Kim, Jin K; Hawkins, Samuel D; Klem, John F; Cich, Michael J

2013-05-28

A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.
Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors.

PubMed

Wang, You-Yi; Wu, Ya-Dong; Peng, Wei; Song, Yong-Hong; Wang, Bao; Wu, Chun-Yan; Lu, Yang

2018-06-13

Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir-Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm-2) with responsivity (R) 15 mA W-1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W-1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.
Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors

PubMed Central

Wang, Han; Zhen, Honglou; Li, Shilong; Jing, Youliang; Huang, Gaoshan; Mei, Yongfeng; Lu, Wei

2016-01-01

Three-dimensional (3D) design and manufacturing enable flexible nanomembranes to deliver unique properties and applications in flexible electronics, photovoltaics, and photonics. We demonstrate that a quantum well (QW)–embedded nanomembrane in a rolled-up geometry facilitates a 3D QW infrared photodetector (QWIP) device with enhanced responsivity and detectivity. Circular geometry of nanomembrane rolls provides the light coupling route; thus, there are no external light coupling structures, which are normally necessary for QWIPs. This 3D QWIP device under tube-based light-trapping mode presents broadband enhancement of coupling efficiency and omnidirectional detection under a wide incident angle (±70°), offering a unique solution to high-performance focal plane array. The winding number of these rolled-up QWIPs provides well-tunable blackbody photocurrents and responsivity. 3D self-assembly of functional nanomembranes offers a new path for high conversion efficiency between light and electricity in photodetectors, solar cells, and light-emitting diodes. PMID:27536723
Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling

PubMed Central

Mukherjee, B.; Kaushik, N.; Tripathi, Ravi P. N.; Joseph, A. M.; Mohapatra, P. K.; Dhar, S.; Singh, B. P.; Kumar, G. V. Pavan; Simsek, E.; Lodha, S.

2017-01-01

Modulation of photoluminescence of atomically thin transition metal dichalcogenide two-dimensional materials is critical for their integration in optoelectronic and photonic device applications. By coupling with different plasmonic array geometries, we have shown that the photoluminescence intensity can be enhanced and quenched in comparison with pristine monolayer MoS2. The enhanced exciton emission intensity can be further tuned by varying the angle of polarized incident excitation. Through controlled variation of the structural parameters of the plasmonic array in our experiment, we demonstrate modulation of the photoluminescence intensity from nearly fourfold quenching to approximately threefold enhancement. Our data indicates that the plasmonic resonance couples to optical fields at both, excitation and emission bands, and increases the spontaneous emission rate in a double spacing plasmonic array structure as compared with an equal spacing array structure. Furthermore our experimental results are supported by numerical as well as full electromagnetic wave simulations. This study can facilitate the incorporation of plasmon-enhanced transition metal dichalcogenide structures in photodetector, sensor and light emitter applications. PMID:28134260
Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

NASA Astrophysics Data System (ADS)

Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

2018-02-01

A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.
A simple and transparent well-aligned ZnO nanowire array ultraviolet photodetector with high responsivity

NASA Astrophysics Data System (ADS)

Yin, Lei; Ding, Hesheng; Yuan, Zhaolin; Huang, Wendeng; Shuai, Chunjiang; Xiong, Zhaoxin; Deng, Jianping; Lv, Tengbo

2018-06-01

Well-aligned zinc oxide (ZnO) nanowire arrays were grown on an interdigital patterned fluorine tin oxide (FTO)-coated glass substrate by a facile chemical bath deposition at low temperature. Morphology, crystalline structure, and optical properties of the ZnO nanowire arrays were analyzed in detail. The results revealed that the ZnO nanowires had wurtzite structure, typically ∼40-60 nm in diameter, and ∼700-800 nm in length, a great number of highly uniform and dense nanowires grew vertically on the substrate to form the well-aligned ZnO nanowire arrays, which had very high optical transmission (>86%) in the visible light region. In addition, the performance of ZnO nanowire arrays ultraviolet (UV) photodetector was systematically examined. The photosensitivity (S), responsivity (R), response and decay time of the photodetector were 703 at +0.2 V, 113 A/W at +5 V, 23 s and 73 s respectively. Also, the photoresponse mechanism of the UV photodetector was illuminated in terms of the oxygen adsorption-photodesorption process.
Photodetectors on Coronagraph Mask for Pointing Control

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham

2007-01-01

It has been proposed to install a symmetrical array of photodetectors about the center of the mask of a coronagraph of the type used to search for planets orbiting remote stars. The purpose of this installation is to utilize the light from a star under observation as a guide in pointing the telescope. Simple arithmetic processing of the outputs of the photodetectors would provide indications of the lateral position of the center of the mask relative to the center of the image of the star. These indications could serve as pointing-control feedback signals for adjusting the telescope aim to center the image of the star on the mask. The widths of central mask areas available for placement of photodetectors differ among coronagraph designs, typically ranging upward from about 100 m. Arrays of photodetectors can readily be placed within areas in this size range. The number of detectors in an array could be as small as 4 or as large as 64. The upper limit on the number of detectors would be determined according to the extent of the occulting pattern and the number of functionalities, in addition to pointing control, to be served by the array.
Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Kirienko, V. V.; Armbrister, V. A.; Bloshkin, A. A.; Dvurechenskii, A. V.

2018-04-01

The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually attributed to the surface light trapping and confinement due to generation of surface plasmon waves (SPWs). In the present work, a Ge/Si QDIP integrated with a metal plasmonic structure is fabricated to experimentally measure the photoresponse enhancement and verify that this enhancement is caused by the excitation of the mid-IR surface plasmons. A 50 nm-thick gold film perforated with a 1.2 μm-period two-dimensional square array of subwavelength holes is employed as a plasmonic coupler to convert the incident electromagnetic IR radiation into SPWs. Measurements of the polarization and angular dependencies of the photoresponse allow us to determine the dispersion of plasmon modes. We find that experimental dispersion relations agree well with that derived from a computer simulation for fundamental plasmon resonance, which indicates that the photodetection improvement in the mid-IR spectral region is actually caused by the excitations of surface plasmon Bloch waves.
InAlAs/InGaAs avalanche photodiode arrays for free space optical communication.

PubMed

Ferraro, Mike S; Clark, William R; Rabinovich, William S; Mahon, Rita; Murphy, James L; Goetz, Peter G; Thomas, Linda M; Burris, Harris R; Moore, Christopher I; Waters, William D; Vaccaro, Kenneth; Krejca, Brian D

2015-11-01

In free space optical communication, photodetectors serve not only as communications receivers but also as position sensitive detectors (PSDs) for pointing, tracking, and stabilization. Typically, two separate detectors are utilized to perform these tasks, but recent advances in the fabrication and development of large-area, low-noise avalanche photodiode (APD) arrays have enabled these devices to be used both as PSDs and as communications receivers. This combined functionality allows for more flexibility and simplicity in optical system design without sacrificing the sensitivity and bandwidth performance of smaller, single-element data receivers. This work presents the development of APD arrays rated for bandwidths beyond 1 GHz with measured carrier ionization ratios of approximately 0.2 at moderate APD gains. We discuss the fabrication and characterization of three types of APD arrays along with their performance as high-speed photodetectors.
Multiple resonant absorber with prism-incorporated graphene and one-dimensional photonic crystals in the visible and near-infrared spectral range

NASA Astrophysics Data System (ADS)

Zou, X. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.; Lai, M.

2018-04-01

A multi-band absorber constructed from prism-incorporated one-dimensional photonic crystal (1D-PhC) containing graphene defects is achieved theoretically in the visible and near-infrared (vis-NIR) spectral range. By means of the transfer matrix method (TMM), the effect of structural parameters on the optical response of the structure has been investigated. It is possible to achieve multi-peak and complete optical absorption. The simulations reveal that the light intensity is enhanced at the graphene plane, and the resonant wavelength and the absorption intensity can also be tuned by tilting the incidence angle of the impinging light. In particular, multiple graphene sheets are embedded in the arrays, without any demand of manufacture process to cut them into periodic patterns. The proposed concept can be extended to other two-dimensional (2D) materials and engineered for promising applications, including selective or multiplex filters, multiple channel sensors, and photodetectors.
GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.
Piezo-Phototronic Enhanced UV Sensing Based on a Nanowire Photodetector Array.

PubMed

Han, Xun; Du, Weiming; Yu, Ruomeng; Pan, Caofeng; Wang, Zhong Lin

2015-12-22

A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

PubMed

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.
Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance

NASA Astrophysics Data System (ADS)

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-01

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV–vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na2SO4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm‑2, while an enhanced responsivity (1.8 μA W‑1) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance.

PubMed

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-08

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV-vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na 2 SO 4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm -2 , while an enhanced responsivity (1.8 μA W -1 ) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.
CdZnTe Image Detectors for Hard-X-Ray Telescopes

NASA Technical Reports Server (NTRS)

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

2005-01-01

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.
SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Optoelectronic processors with scanning CCD photodetectors

NASA Astrophysics Data System (ADS)

Esepkina, N. A.; Lavrov, A. P.; Anan'ev, M. N.; Blagodarnyi, V. S.; Ivanov, S. I.; Mansyrev, M. I.; Molodyakov, S. A.

1995-10-01

Two new types of optoelectronic radio-signal processors were investigated. Charge-coupled device (CCD) photodetectors are used in these processors under continuous scanning conditions, i.e. in a time delay and storage mode. One of these processors is based on a CCD photodetector array with a reference-signal amplitude transparency and the other is an adaptive acousto-optical signal processor with linear frequency modulation. The processor with the transparency performs multichannel discrete—analogue convolution of an input signal with a corresponding kernel of the transformation determined by the transparency. If a light source is an array of light-emitting diodes of special (stripe) geometry, the optical stages of the processor can be made from optical fibre components and the whole processor then becomes a rigid 'sandwich' (a compact hybrid optoelectronic microcircuit). A report is given also of a study of a prototype processor with optical fibre components for the reception of signals from a system with antenna aperture synthesis, which forms a radio image of the Earth.
High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

PubMed

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

NASA Astrophysics Data System (ADS)

Wu, Guangjian; Wang, Xudong; Wang, Peng; Huang, Hai; Chen, Yan; Sun, Shuo; Shen, Hong; Lin, Tie; Wang, Jianlu; Zhang, Shangtao; Bian, Lifeng; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2016-09-01

Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.
Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

PubMed

Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

2016-02-17

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.
Flexible Photodetectors Based on 1D Inorganic Nanostructures

PubMed Central

Lou, Zheng

2015-01-01

Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic properties. This article offers a comprehensive review of several types of flexible photodetectors based on 1D nanostructures from the past ten years, including flexible ultraviolet, visible, and infrared photodetectors. High‐performance organic‐inorganic hybrid photodetectors, as well as devices with 1D nanowire (NW) arrays, are also reviewed. Finally, new concepts of flexible photodetectors including piezophototronic, stretchable and self‐powered photodetectors are examined to showcase the future research in this exciting field. PMID:27774404
A CWDM photoreceiver module for 10 Gb/s x 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG

NASA Astrophysics Data System (ADS)

Jang, Ki-Seok; Joo, Jiho; Kim, Taeyong; Kim, Sanghoon; Oh, Jin Hyuk; Kim, In Gyoo; Kim, Sun Ae; Kim, Gyungock

2015-03-01

We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ~ -12.2 dBm sensitivity at a BER = 10-12.
Strained-layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM; Gin, Aaron [Albuquerque, NM; Marsh, Phillip F [Lowell, MA; Young, Erik W [Albuquerque, NM; Cich, Michael J [Albuquerque, NM

2010-07-13

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.
Strained layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K; Carroll, Malcolm S; Gin, Aaron; Marsh, Phillip F; Young, Erik W; Cich, Michael J

2012-10-23

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.
Light trapping and surface plasmon enhanced high-performance NIR photodetector

PubMed Central

Luo, Lin-Bao; Zeng, Long-Hui; Xie, Chao; Yu, Yong-Qiang; Liang, Feng-Xia; Wu, Chun-Yan; Wang, Li; Hu, Ji-Gang

2014-01-01

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well. PMID:24468857
Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

NASA Astrophysics Data System (ADS)

Yakimov, A. I.; Kirienko, V. V.; Bloshkin, A. A.; Armbrister, V. A.; Dvurechenskii, A. V.

2017-10-01

Quantum dot based infrared (IR) photodetectors (QDIPs) have the potential to provide meaningful advances to the next generation of imaging systems due to their sensitivity to normal incidence radiation, large optical gain, low dark currents, and high operating temperature. SiGe-based QDIPs are of particular interest as they are compatible with silicon integration technology but suffer from the low absorption coefficient and hence small photoresponse in the mid-wavelength IR region. Here, we report on the plasmonic enhanced Ge/Si QDIPs with tailorable wavelength optical response and polarization selectivity. Ge/Si heterostructures with self-assembled Ge quantum dots are monolithically integrated with periodic two-dimensional arrays of subwavelength holes (2DHAs) perforated in gold films to convert the incident electromagnetic IR radiation into the surface plasmon polariton (SPP) waves. The resonant responsivity of the plasmonic detector at a wavelength of 5.4 μm shows an enhancement of up to thirty times over a narrow spectral bandwidth (FWHM = 0.3 μm), demonstrating the potentiality of this approach for the realization of high-performance Ge/Si QDIPs that require high spectral resolution. The possibility of the polarization-sensitive detection in Ge/Si QDIPs enhanced with a stretched-lattice 2DHA is reported. The excitation of SPP modes and the near-field components are investigated with the three-dimensional finite-element frequency-domain method. The role that plasmonic electric field plays in QDIP enhancement is discussed.
Exploratory Corrugated Infrared Hot-Electron Transistor Arrays

DTIC Science & Technology

2009-02-01

quantum well infrared photodetector ( QWIP ) structure. This improvement is consistent with the hot-electron distributions created by the thermal and...the designed value. This higher barrier height can be attributed to the finite p-type doping density in the material. 15. SUBJECT TERMS QWIP ...infrared photodetector ( QWIP ) sensor in a small exploratory array format, which is capable of suppressing the detector dark current. The new detector
Silicon-based optoelectronics: Monolithic integration for WDM

NASA Astrophysics Data System (ADS)

Pearson, Matthew Richard T.

2000-10-01

This thesis details the development of enabling technologies required for inexpensive, monolithic integration of Si-based wavelength division multiplexing (WDM) components and photodetectors. The work involves the design and fabrication of arrayed waveguide grating demultiplexers in silicon-on-insulator (SOI), the development of advanced SiGe photodetectors capable of photodetection at 1.55 mum wavelengths, and the development of a low cost fabrication technique that enables the high volume production of Si-based photonic components. Arrayed waveguide grating (AWG) demultiplexers were designed and fabricated in SOI. The fabrication of AWGs in SOI has been reported in the literature, however there are a number of design issues specific to the SOI material system that can have a large effect on device performance and design, and have not been theoretically examined in earlier work. The SOI AWGs presented in this thesis are the smallest devices of this type reported, and they exhibit performance acceptable for commercial applications. The SiGe photodetectors reported in the literature exhibit extremely low responsivities at wavelengths near 1.55 mum. We present the first use of three dimensional growth modes to enhance the photoresponse of SiGe at 1.55 mum wavelengths. Metal semiconductor-metal (MSM) photodetectors were fabricated using this undulating quantum well structure, and demonstrate the highest responsivities yet reported for a SiGe-based photodetector at 1.55 mum. These detectors were monolithically integrated with low-loss SOI waveguides, enabling integration with nearly any Si-based passive WDM component. The pursuit of inexpensive Si-based photonic components also requires the development of new manufacturing techniques that are more suitable for high volume production. This thesis presents the development of a low cost fabrication technique based on the local oxidation of silicon (LOCOS), a standard processing technique used for Si integrated circuits. This process is developed for both SiGe and SOI waveguides, but is shown to be commercially suitable only for SOI waveguide devices. The technique allows nearly any Si microelectronics fabrication facility to begin manufacturing optical components with minimal change in processing equipment or techniques. These enabling technologies provide the critical elements for inexpensive, monolithic integration in a Si-based system.
MOS Circuitry Would Detect Low-Energy Charged Particles

NASA Technical Reports Server (NTRS)

Sinha, Mahadeva; Wadsworth, Mark

2003-01-01

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.
Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

PubMed

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.
High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we concludemore » that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.« less
Piezo-phototronic effect enhanced photo-detector based on ZnO nano-arrays/NiO structure

NASA Astrophysics Data System (ADS)

Sun, Jingchang; Li, Peida; Gao, Ruixue; Lu, Xue; Li, Chengren; Lang, Yueyi; Zhang, Xiwen; Bian, Jiming

2018-01-01

A photo-detector with n-ZnO nano-arrays/p-NiO film structure was synthesized on flexible Ni foil substrate. In contrast to conventional detectors that detect only the photon energies greater than the band gap of working materials, the visible light with smaller photon energies (3.0 eV) than the band gap of both ZnO (3.3 eV) and NiO (3.7 eV) can be sensitively detected by this detector due to the spatially indirect type-II transition between ZnO nano-arrays and NiO film. The increase in output currents of the photo-detector with illumination density was observed at both forward and reverse bias, and it can be further enhanced by exerting external compressive strain along the c axis of ZnO nano-arrays by piezo-phototronic effect. A maximum enhancement of 1020% of the responsivity (R) was achieved under external compressive strain. The similar behaviors were demonstrated at four different excitation wavelengths (325, 365, 388 and 405 nm), providing compelling evidence that the responses performance of the photo-detector can be effectively enhanced using piezo-phototronic effect. Moreover, the piezo-phototronic effect enhanced performance can be well elucidated by the corresponding energy band diagram.
Low Voltage Low Light Imager and Photodetector

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

2013-01-01

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.
Coherent Detection of High-Rate Optical PPM Signals

NASA Technical Reports Server (NTRS)

Vilnrotter, Victor; Fernandez, Michela Munoz

2006-01-01

A method of coherent detection of high-rate pulse-position modulation (PPM) on a received laser beam has been conceived as a means of reducing the deleterious effects of noise and atmospheric turbulence in free-space optical communication using focal-plane detector array technologies. In comparison with a receiver based on direct detection of the intensity modulation of a PPM signal, a receiver based on the present method of coherent detection performs well at much higher background levels. In principle, the coherent-detection receiver can exhibit quantum-limited performance despite atmospheric turbulence. The key components of such a receiver include standard receiver optics, a laser that serves as a local oscillator, a focal-plane array of photodetectors, and a signal-processing and data-acquisition assembly needed to sample the focal-plane fields and reconstruct the pulsed signal prior to detection. The received PPM-modulated laser beam and the local-oscillator beam are focused onto the photodetector array, where they are mixed in the detection process. The two lasers are of the same or nearly the same frequency. If the two lasers are of different frequencies, then the coherent detection process is characterized as heterodyne and, using traditional heterodyne-detection terminology, the difference between the two laser frequencies is denoted the intermediate frequency (IF). If the two laser beams are of the same frequency and remain aligned in phase, then the coherent detection process is characterized as homodyne (essentially, heterodyne detection at zero IF). As a result of the inherent squaring operation of each photodetector, the output current includes an IF component that contains the signal modulation. The amplitude of the IF component is proportional to the product of the local-oscillator signal amplitude and the PPM signal amplitude. Hence, by using a sufficiently strong local-oscillator signal, one can make the PPM-modulated IF signal strong enough to overcome thermal noise in the receiver circuits: this is what makes it possible to achieve near-quantum-limited detection in the presence of strong background. Following quantum-limited coherent detection, the outputs of the individual photodetectors are automatically aligned in phase by use of one or more adaptive array compensation algorithms [e.g., the least-mean-square (LMS) algorithm]. Then the outputs are combined and the resulting signal is processed to extract the high-rate information, as though the PPM signal were received by a single photodetector. In a continuing series of experiments to test this method (see Fig. 1), the local oscillator has a wavelength of 1,064 nm, and another laser is used as a signal transmitter at a slightly different wavelength to establish an IF of about 6 MHz. There are 16 photodetectors in a 4 4 focal-plane array; the detector outputs are digitized at a sampling rate of 25 MHz, and the signals in digital form are combined by use of the LMS algorithm. Convergence of the adaptive combining algorithm in the presence of simulated atmospheric turbulence for optical PPM signals has already been demonstrated in the laboratory; the combined output is shown in Fig. 2(a), and Fig. 2(b) shows the behavior of the phase of the combining weights as a function of time (or samples). We observe that the phase of the weights has a sawtooth shape due to the continuously changing phase in the down-converted output, which is not exactly at zero frequency. Detailed performance analysis of this coherent free-space optical communication system in the presence of simulated atmospheric turbulence is currently under way.

Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces

NASA Astrophysics Data System (ADS)

So, Hongyun; Lim, Jongwoo; Suria, Ateeq J.; Senesky, Debbie G.

2017-07-01

Highly antireflective heterostructured aluminum gallium nitride (AlGaN)/GaN ultraviolet (UV) photodetectors were demonstrated using a combination of inverted pyramidal surfaces and zinc oxide nanorod arrays (i.e., antireflective surface modification) to enhance the optical sensitivity. The microfabricated hierarchical surfaces significantly reduced the average surface reflectance to less than 0.3% in the UV region and less than 1% in the visible light region, allowing near-perfect absorption of incident light regardless of the angle of incidence (5-80°). As a result, the photodetectors fabricated on highly antireflective AlGaN/GaN surfaces showed higher sensitivity and responsivity over a broad range of incidence angles compared to photodetectors on planar AlGaN/GaN surfaces, supporting the use of a hierarchically modified sensing surface for omnidirectional UV monitoring with higher sensitivity.
Nanostructure Diffraction Gratings for Integrated Spectroscopy and Sensing

NASA Technical Reports Server (NTRS)

Guo, Junpeng (Inventor)

2015-01-01

The present disclosure pertains to metal or dielectric nanostructures of the subwavelength scale within the grating lines of optical diffraction gratings. The nanostructures have surface plasmon resonances or non-plasmon optical resonances. A linear photodetector array is used to capture the resonance spectra from one of the diffraction orders. The combined nanostructure super-grating and photodetector array eliminates the use of external optical spectrometers for measuring surface plasmon or optical resonance frequency shift caused by the presence of chemical and biological agents. The nanostructure super-gratings can be used for building integrated surface enhanced Raman scattering (SERS) spectrometers. The nanostructures within the diffraction grating lines enhance Raman scattering signal light while the diffraction grating pattern of the nanostructures diffracts Raman scattering light to different directions of propagation according to their wavelengths. Therefore, the nanostructure super-gratings allows for the use of a photodetector array to capture the surface enhanced Raman scattering spectra.
Nanostructure Diffraction Gratings for Integrated Spectroscopy and Sensing

NASA Technical Reports Server (NTRS)

Guo, Junpeng (Inventor)

2016-01-01

The present disclosure pertains to metal or dielectric nanostructures of the subwavelength scale within the grating lines of optical diffraction gratings. The nanostructures have surface plasmon resonances or non-plasmon optical resonances. A linear photodetector array is used to capture the resonance spectra from one of the diffraction orders. The combined nanostructure super-grating and photodetector array eliminates the use of external optical spectrometers for measuring surface plasmon or optical resonance frequency shift caused by the presence of chemical and biological agents. The nanostructure super-gratings can be used for building integrated surface enhanced Raman scattering (SERS) spectrometers. The nanostructures within the diffraction grating lines enhance Raman scattering signal light while the diffraction grating pattern of the nanostructures diffracts Raman scattering light to different directions of propagation according to their wavelengths. Therefore, the nanostructure super-gratings allows for the use of a photodetector array to capture the surface enhanced Raman scattering spectra.
Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong; Stein, Aaron

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less
Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE PAGES

Nam, Chang-Yong; Stein, Aaron

2017-11-15

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less
High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

PubMed Central

Rivera, Manuel; Rahaman, Mostafizur; Zhou, Andrew F.; Mohammed Alzuraiqi, Waleed; Feng, Peter

2017-01-01

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors. PMID:29257098
Near-infrared photodetector with reduced dark current

DOEpatents

Klem, John F; Kim, Jin K

2012-10-30

A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.
III-V infrared research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Soibel, A.; Liu, John; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Nguyen, J.; Bandara, S. V.; Tidrow, M. Z.

2009-08-01

Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.
Range Imaging without Moving Parts

NASA Technical Reports Server (NTRS)

Blair, J. Bryan; Scott, V. Stanley, III; Ramos-Izquierdo, Luis

2008-01-01

Range-imaging instruments of a type now under development are intended to generate the equivalent of three-dimensional images from measurements of the round-trip times of flight of laser pulses along known directions. These instruments could also provide information on characteristics of targets, including roughnesses and reflectivities of surfaces and optical densities of such semi-solid objects as trees and clouds. Unlike in prior range-imaging instruments based on times of flight along known directions, there would be no moving parts; aiming of the laser beams along the known directions would not be accomplished by mechanical scanning of mirrors, prisms, or other optical components. Instead, aiming would be accomplished by using solid-state devices to switch input and output beams along different fiber-optic paths. Because of the lack of moving parts, these instruments could be extraordinarily reliable, rugged, and long-lasting. An instrument of this type would include an optical transmitter that would send out a laser pulse along a chosen direction to a target. An optical receiver coaligned with the transmitter would measure the temporally varying intensity of laser light reflected from the target to determine the distance and surface characteristics of the target. The transmitter would be a combination of devices for generating precise directional laser illumination. It would include a pulsed laser, the output of which would be coupled into a fiber-optic cable with a fan-out and solid-state optical switches that would enable switching of the laser beam onto one or more optical fibers terminated at known locations in an array on a face at the focal plane of a telescope. The array would be imaged by the telescope onto the target space. The receiver optical system could share the aforementioned telescope with the transmitter or could include a separate telescope aimed in the same direction as that of the transmitting telescope. In either case, light reflected from the target would be focused by the receiver optical system onto an array of optical fibers matching the array in the transmitter. These optical fibers would couple the received light to one or more photodetector( s). Optionally, the receiver could include solid-state optical switches for choosing which optical fiber(s) would couple light to the photodetector(s). This instrument architecture is flexible and can be optimized for a wide variety of applications and levels of performance. For example, it is scalable to any number of pixels and pixel resolutions and is compatible with a variety of ranging and photodetection methodologies, including, for example, ranging by use of modulated (including pulsed and encoded) light signals. The use of fixed arrays of optical fibers to generate controlled illumination patterns would eliminate the mechanical complexity and much of the bulk of optomechanical scanning assemblies. Furthermore, digital control of the selection of the fiber-optic pathways for the transmitted beams could afford capabilities not seen in previous three-dimensional range-imaging systems. Instruments of this type could be specialized for use as, for example, proximity detectors, three-dimensional robotic vision systems, airborne terrain-mapping systems, and inspection systems.
Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet.

PubMed

Chen, Jin-Hui; Liang, Zhao-Huan; Yuan, Lie-Rong; Li, Cheng; Chen, Min-Rui; Xia, Yi-Dong; Zhang, Xue-Jin; Xu, Fei; Lu, Yan-Qing

2017-03-09

Although photodetectors based on two dimensional (2D) materials have been intensively studied, there are few reports of optical fiber compatible devices. Herein we successfully fabricated an all-in fiber photodetector (FPD) based on an end-face bonded with few-layer molybdenum disulfide (MoS 2 ). Our FPD has a considerably high photo-responsivity of ∼0.6 A W -1 at a bias voltage of 4 V and 0.01 A W -1 under the bias-free conditions. We believe that the proposed platform may provide a new strategy for the integration of 2D materials in fibers and realization of optoelectronic and sensing applications.
Fabrication and Characterization of a Long Wavelength InP HBT-Based Optical Receiver

NASA Technical Reports Server (NTRS)

Roenker, Kenneth P.

1997-01-01

Development of a high speed photodetector - the InP-based phototransistor (HPT) for use in optical receivers for microwave signal distribution for satellite phased array antennas is addressed. Currently, p-i-n photodetectors are used because of their compatibility with the heterojunction bipolar transistor (HBT), but their performance limits the bandwidth of these optical receivers. The HPT photodetector was investigated here as an alternative photodetector for monolithic integration with heterojunction bipolar transistor amplifiers in long wavelength (1.3 micron), gigahertz (GHz) frequency optical receivers.
Heterojunction-Internal-Photoemission Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.
Solid-state image sensor with focal-plane digital photon-counting pixel array

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

1995-01-01

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.
All Carbon-Based Photodetectors: An eminent integration of graphite quantum dots and two dimensional graphene

PubMed Central

Cheng, Shih-Hao; Weng, Tong-Min; Lu, Meng-Lin; Tan, Wei-Chun; Chen, Ju-Ying; Chen, Yang-Fang

2013-01-01

Photodetectors with ultrahigh sensitivity based on the composite made with all carbon-based materials consisting of graphite quantum dots (QDs), and two dimensional graphene crystal have been demonstrated. Under light illumination, remarkably, a photocurrent responsivity up to 4 × 107 AW−1 can be obtained. The underlying mechanism is attributed to the spatial separation of photogenerated electrons and holes due to the charge transfer caused by the appropriate band alignment across the interface between graphite QDs and graphene. Besides, the large absorptivity of graphite QDs and the excellent conductivity of the graphene sheet also play significant roles. Our result therefore demonstrates an outstanding illustration for the integration of the distinct properties of nanostructured carbon materials with different dimensionalities to achieve highly efficient devices. Together with the associated mechanism, it paves a valuable step for the further development of all carbon-based, cheap, and non-toxic optoelectronics devices with excellent performance. PMID:24045846
Photogating in Low Dimensional Photodetectors

PubMed Central

Fang, Hehai

2017-01-01

Abstract Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors. PMID:29270342
Design and production of the digital optical module of the KM3NeT project

NASA Astrophysics Data System (ADS)

Leonora, Emanuele; Giordano, Valentina

2017-03-01

The KM3NeT collaboration is building the ARCA and ORCA neutrino telescopes in the depths of the Mediterranean Sea. They will consist of 3-dimensional arrays of photodetectors, called digital optical modules, suspended in the sea by means of vertical string structures, called detection units. The optical modules are composed of a pressure-resistant 17-inch spherical glass vessel, which contains 31 small photomultiplier tubes and all the associated electronics. The multi- photomultiplier solution represents an innovative design with respect to optical modules of all currently operated neutrino telescopes comprising a single large photomultipliers.
Control electronics for a multi-laser/multi-detector scanning system

NASA Technical Reports Server (NTRS)

Kennedy, W.

1980-01-01

The Mars Rover Laser Scanning system uses a precision laser pointing mechanism, a photodetector array, and the concept of triangulation to perform three dimensional scene analysis. The system is used for real time terrain sensing and vision. The Multi-Laser/Multi-Detector laser scanning system is controlled by a digital device called the ML/MD controller. A next generation laser scanning system, based on the Level 2 controller, is microprocessor based. The new controller capabilities far exceed those of the ML/MD device. The first draft circuit details and general software structure are presented.
Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.
Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

DTIC Science & Technology

1993-11-01

Development of Ultra-Low Noise , High Performance III-V Quantum Well Infrared Photodetectors ( QWIPs )I for Focal Plane Array Staring Image Sensor Systems...experimental studies of dark current, photocurrent, noise fig- ures optical absorption, spectral responsivity and detectivity for different types of QWIPs ...the Boltzmann constant, and T is the temperature. S The noise in the QWIPs is mainly due to the random fluctuations of thermally excited carriers. The
Wiener-matrix image restoration beyond the sampling passband

NASA Technical Reports Server (NTRS)

Rahman, Zia-Ur; Alter-Gartenberg, Rachel; Fales, Carl L.; Huck, Friedrich O.

1991-01-01

A finer-than-sampling-lattice resolution image can be obtained using multiresponse image gathering and Wiener-matrix restoration. The multiresponse image gathering weighs the within-passband and aliased signal components differently, allowing the Wiener-matrix restoration filter to unscramble these signal components and restore spatial frequencies beyond the sampling passband of the photodetector array. A multiresponse images can be reassembled into a single minimum mean square error image with a resolution that is sq rt A times finer than the photodetector-array sampling lattice.

Small Business Innovations (Photodetector)

NASA Technical Reports Server (NTRS)

1991-01-01

Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.
One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

PubMed

Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

2013-06-11

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Ultrahigh-frame CCD imagers

NASA Astrophysics Data System (ADS)

Lowrance, John L.; Mastrocola, V. J.; Renda, George F.; Swain, Pradyumna K.; Kabra, R.; Bhaskaran, Mahalingham; Tower, John R.; Levine, Peter A.

2004-02-01

This paper describes the architecture, process technology, and performance of a family of high burst rate CCDs. These imagers employ high speed, low lag photo-detectors with local storage at each photo-detector to achieve image capture at rates greater than 106 frames per second. One imager has a 64 x 64 pixel array with 12 frames of storage. A second imager has a 80 x 160 array with 28 frames of storage, and the third imager has a 64 x 64 pixel array with 300 frames of storage. Application areas include capture of rapid mechanical motion, optical wavefront sensing, fluid cavitation research, combustion studies, plasma research and wind-tunnel-based gas dynamics research.
Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Wanjun; Wang, Guosheng; Wu, Haoran; Wang, Tanglin; Song, Man

2015-08-01

We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.
High operating temperature interband cascade focal plane arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Z.-B.; Godoy, S. E.; Kim, H. S.

2014-08-04

In this paper, we report the initial demonstration of mid-infrared interband cascade (IC) photodetector focal plane arrays with multiple-stage/junction design. The merits of IC photodetectors include low noise and efficient photocarrier extraction, even for zero-bias operation. By adopting enhanced electron barrier design and a total absorber thickness of 0.7 μm, the 5-stage IC detectors show very low dark current (1.10 × 10{sup −7} A/cm{sup 2} at −5 mV and 150 K). Even with un-optimized fabrication and standard commercial (mis-matched) read-out circuit technology, infrared images are obtained by the 320 × 256 IC focal plane array up to 180 K with f/2.3 optics. The minimum noise equivalent temperature differencemore » of 28 mK is obtained at 120 K. These initial results indicate great potential of IC photodetectors, particularly for high operating temperature applications.« less
Investigation of OPET Performance Using GATE, a Geant4-Based Simulation Software.

PubMed

Rannou, Fernando R; Kohli, Vandana; Prout, David L; Chatziioannou, Arion F

2004-10-01

A combined optical positron emission tomography (OPET) system is capable of both optical and PET imaging in the same setting, and it can provide information/interpretation not possible in single-mode imaging. The scintillator array here serves the dual function of coupling the optical signal from bioluminescence/fluorescence to the photodetector and also of channeling optical scintillations from the gamma rays. We report simulation results of the PET part of OPET using GATE, a Geant4 simulation package. The purpose of this investigation is the definition of the geometric parameters of the OPET tomograph. OPET is composed of six detector blocks arranged in a hexagonal ring-shaped pattern with an inner radius of 15.6 mm. Each detector consists of a two-dimensional array of 8 × 8 scintillator crystals each measuring 2 × 2 × 10 mm(3). Monte Carlo simulations were performed using the GATE software to measure absolute sensitivity, depth of interaction, and spatial resolution for two ring configurations, with and without gantry rotations, two crystal materials, and several crystal lengths. Images were reconstructed with filtered backprojection after angular interleaving and transverse one-dimensional interpolation of the sinogram. We report absolute sensitivities nearly seven times that of the prototype microPET at the center of field of view and 2.0 mm tangential and 2.3 mm radial resolutions with gantry rotations up to an 8.0 mm radial offset. These performance parameters indicate that the imaging spatial resolution and sensitivity of the OPET system will be suitable for high-resolution and high-sensitivity small-animal PET imaging.
Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

NASA Astrophysics Data System (ADS)

Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

2016-03-01

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.
Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

PubMed

Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

2015-07-22

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.
Relevancies of multiple-interaction events and signal-to-noise ratio for Anger-logic based PET detector designs

NASA Astrophysics Data System (ADS)

Peng, Hao

2015-10-01

A fundamental challenge for PET block detector designs is to deploy finer crystal elements while limiting the number of readout channels. The standard Anger-logic scheme including light sharing (an 8 by 8 crystal array coupled to a 2×2 photodetector array with an optical diffuser, multiplexing ratio: 16:1) has been widely used to address such a challenge. Our work proposes a generalized model to study the impacts of two critical parameters on spatial resolution performance of a PET block detector: multiple interaction events and signal-to-noise ratio (SNR). The study consists of the following three parts: (1) studying light output profile and multiple interactions of 511 keV photons within crystal arrays of different crystal widths (from 4 mm down to 1 mm, constant height: 20 mm); (2) applying the Anger-logic positioning algorithm to investigate positioning/decoding uncertainties (i.e., "block effect") in terms of peak-to-valley ratio (PVR), with light sharing, multiple interactions and photodetector SNR taken into account; and (3) studying the dependency of spatial resolution on SNR in the context of modulation transfer function (MTF). The proposed model can be used to guide the development and evaluation of a standard Anger-logic based PET block detector including: (1) selecting/optimizing the configuration of crystal elements for a given photodetector SNR; and (2) predicting to what extent additional electronic multiplexing may be implemented to further reduce the number of readout channels.
Mosaic-Detector-Based Fluorescence Spectral Imager

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong

2007-01-01

A battery-powered, pen-sized, portable instrument for measuring molecular fluorescence spectra of chemical and biological samples in the field has been proposed. Molecular fluorescence spectroscopy is among the techniques used most frequently in laboratories to analyze compositions of chemical and biological samples. Heretofore, it has been possible to measure fluorescence spectra of molecular species at relative concentrations as low as parts per billion (ppb), with a few nm spectral resolution. The proposed instrument would include a planar array (mosaic) of detectors, onto which a fluorescence spectrum would be spatially mapped. Unlike in the larger laboratory-type molecular fluorescence spectrometers, mapping of wavelengths to spatial positions would be accomplished without use of relatively bulky optical parts. The proposed instrument is expected to be sensitive enough to enable measurement of spectra of chemical species at relative concentrations <1 ppb, with spectral resolution that could be tailored by design to be comparable to a laboratory molecular fluorescence spectrometer. The proposed instrument (see figure) would include a button-cell battery and a laser diode, which would generate the monochromatic ultraviolet light needed to excite fluorescence in a sample. The sample would be held in a cell bounded by far-ultraviolet-transparent quartz or optical glass. The detector array would be, more specifically, a complementary metal oxide/ semiconductor or charge-coupled- device imaging photodetector array, the photodetectors of which would be tailored to respond to light in the wavelength range of the fluorescence spectrum to be measured. The light-input face of the photodetector array would be covered with a matching checkerboard array of multilayer thin film interference filters, such that each pixel in the array would be sensitive only to light in a spectral band narrow enough so as not to overlap significantly with the band of an adjacent pixel. The wavelength interval between adjacent pixels (and, thus, the spectral resolution) would typically be chosen by design to be approximately equal to the width of the total fluorescence wavelength range of interest divided by the number of pixels. The unitary structure comprising the photodetector array overlaid with the matching filter array would be denoted a hyperspectral mosaic detector (HMD) array.
8- to 9-μm and 14- to 15-μm two-color 640x486 GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera

NASA Astrophysics Data System (ADS)

Gunapala, Sarath D.; Bandara, Sumith V.; Singh, Anjali; Liu, John K.; Rafol, S. B.; Luong, Edward M.; Mumolo, Jason M.; Tran, N. Q.; Vincent, John D.; Shott, C. A.; Long, James F.; LeVan, Paul D.

1999-07-01

An optimized long-wavelength two-color quantum well IR photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi- insulating GaAs substrate by molecule beam epitaxy (MBE). This wafer was processed into several 640 X 486 format monolithically integrated 8-9 and 14-15 micrometers two-color QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640 X 486 silicon CMOS readout multiplexers. A thinned FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micrometers detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micrometers detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference, uniformity, and operability.
640 X 486 Long-Wavelength Two-Color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Singh, A.; Liu, J. K.; Rafol, S. B.

2000-01-01

We have designed and fabricated an optimized long-wavelength/very-long-wavelength two-color quantum well infrared photodetector (QWIP) device structure. The device structure was grown on a 3-in semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The wafer was processed into several 640 x 486 format monolithically integrated 8-9 and 14-15 micrometers two-color (or dual wavelength) QWIP focal plane arrays (FPA's). These FPA's were then hybridized to 640 x 486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into liquid helium cooled dewar for electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micrometers detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature for 300 K background with f/2 cold stop. The 14-15 micrometers detectors of the SPA reach BLIP at 40 K operating temperature under the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP SPA in terms of quantum efficiency, detectivity, noise equivalent temperature difference (NE DELTA T), uniformity, and operability.
Quantum well infrared photodetector simultaneously working in the two atmospheric windows

NASA Astrophysics Data System (ADS)

Huo, Y. H.; Ma, W. Q.; Zhang, Y. H.; Chong, M.; Yang, T.; Chen, L. H.; Shi, Y. L.

2009-07-01

We have demonstrated a dual-band quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse both in the mid and the long wavelength atmospheric windows of 3-5 μm and of 8-12 μm, but the device only has two ohmic contacts. The structure of the device was achieved by sequentially growing a mid wavelength part (MWQWIP) followed by a long wavelength part (LWQWIP) separated by an n+ layer. Comparing with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate the two-color focal plane array (FPA) fabrication by reducing the number of the indium bump per pixel from three to one just like a monochromatic FPA fabrication; another advantage may be that this QWIP FAP boasts two-color detection capability while only using a monochromatic readout integrated circuit.
Integrated optical interrogation of micro-structures

DOEpatents

Evans, III, Boyd M.; Datskos, Panagiotis G.; Rajic, Slobodan

2003-01-01

The invention is an integrated optical sensing element for detecting and measuring changes in position or deflection. A deflectable member, such as a microcantilever, is configured to receive a light beam. A waveguide, such as an optical waveguide or an optical fiber, is positioned to redirect light towards the deflectable member. The waveguide can be incorporated into the deflectable member or disposed adjacent to the deflectable member. Means for measuring the extent of position change or deflection of the deflectable member by receiving the light beam from the deflectable member, such as a photodetector or interferometer, receives the reflected light beam from the deflectable member. Changes in the light beam are correlated to the changes in position or deflection of the deflectable member. A plurality of deflectable members can be arranged in a matrix or an array to provide one or two-dimensional imaging or sensing capabilities.
Design of a compact static Fourier transform spectrometer in integrated optics based on a leaky loop structure.

PubMed

Martin, Bruno; Morand, Alain; Benech, Pierre; Leblond, Gregory; Blaize, Sylvain; Lerondel, Gilles; Royer, Pascal; Kern, Pierre; Le Coarer, Etienne

2009-01-15

A compact static Fourier transform spectrometer for integrated optics is proposed. It is based on a plane leaky loop structure combined with a plane waveguide. The interference pattern produced in the loop structure leaks outside of it and is guided in the plane waveguide to the photodetector array. This configuration allows one to control the shape of the field pattern at the end of the plane waveguide. A large fringe pattern with a high interference fringe contrast is obtained. A two-dimensional model based on an aperiodic Fourier modal method is used to modelize the coupling between the bent and the plane waveguides, completed with the Helmholtz-Kirchhoff propagation. This concept gives access to plan and compact spectrometers requiring only a single low-cost realization process step. The simulation has been done to realize a spectrometer in glass integrated optics (Deltalambda=6.1 nm at 1500 nm).
Broadband omnidirectional antireflection coating based on subwavelength surface Mie resonators

PubMed Central

Spinelli, P.; Verschuuren, M.A.; Polman, A.

2012-01-01

Reflection is a natural phenomenon that occurs when light passes the interface between materials with different refractive index. In many applications, such as solar cells or photodetectors, reflection is an unwanted loss process. Many ways to reduce reflection from a substrate have been investigated so far, including dielectric interference coatings, surface texturing, adiabatic index matching and scattering from plasmonic nanoparticles. Here we present an entirely new concept that suppresses the reflection of light from a silicon surface over a broad spectral range. A two-dimensional periodic array of subwavelength silicon nanocylinders designed to possess strongly substrate-coupled Mie resonances yields almost zero total reflectance over the entire spectral range from the ultraviolet to the near-infrared. This new antireflection concept relies on the strong forward scattering that occurs when a scattering structure is placed in close proximity to a high-index substrate with a high optical density of states. PMID:22353722
15-micro-m 128 x 128 GaAs/Al(x)Ga(1-x) As Quantum Well Infrared Photodetector Focal Plane Array Camera

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Park, Jin S.; Sarusi, Gabby; Lin, True-Lon; Liu, John K.; Maker, Paul D.; Muller, Richard E.; Shott, Craig A.; Hoelter, Ted

1997-01-01

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved.
Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

DTIC Science & Technology

1993-08-01

Development of Ultra-Low Noise , High Performance III-V Quantum Well Infrared Photodetectors ( QWIPs ) for Focal Plane Array Staring Image Sensor Systems...using a 2-D square mesh grating coupler to achieve maximum responsivity for an InGaAs SBTM QWIP , and (iv) performed noise characterization on four...different types of Ir-V QWIPs and identified their noise sources. Detailed results and accomplishments are discussed in this report. 1 SJ •aTEtcRMrtlS
Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

NASA Astrophysics Data System (ADS)

Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

2017-12-01

Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.
Computational circular dichroism estimation for point-of-care diagnostics via vortex half-wave retarders

NASA Astrophysics Data System (ADS)

Haider, Shahid A.; Tran, Megan Y.; Wong, Alexander

2018-02-01

Observing the circular dichroism (CD) caused by organic molecules in biological fluids can provide powerful indicators of patient health and provide diagnostic clues for treatment. Methods for this kind of analysis involve tabletop devices that weigh tens of kilograms with costs on the order of tens of thousands of dollars, making them prohibitive in point-of-care diagnostic applications. In an e ort to reduce the size, cost, and complexity of CD estimation systems for point-of-care diagnostics, we propose a novel method for CD estimation that leverages a vortex half-wave retarder in between two linear polarizers and a two-dimensional photodetector array to provide an overall complexity reduction in the system. This enables the measurement of polarization variations across multiple polarizations after they interact with a biological sample, simultaneously, without the need for mechanical actuation. We further discuss design considerations of this methodology in the context of practical applications to point-of-care diagnostics.

Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect

NASA Astrophysics Data System (ADS)

Huang, Hai; Wang, Jianlu; Hu, Weida; Liao, Lei; Wang, Peng; Wang, Xudong; Gong, Fan; Chen, Yan; Wu, Guangjian; Luo, Wenjin; Shen, Hong; Lin, Tie; Sun, Jinglan; Meng, Xiangjian; Chen, Xiaoshuang; Chu, Junhao

2016-11-01

Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied for different thicknesses of MoTe2. The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6-1.55 μm) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 109 cm Hz1/2 W-1 for 637 nm light and 1.3 × 109 cm Hz1/2 W-1 for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.
A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
Statistical photocalibration of photodetectors for radiometry without calibrated light sources

NASA Astrophysics Data System (ADS)

Yielding, Nicholas J.; Cain, Stephen C.; Seal, Michael D.

2018-01-01

Calibration of CCD arrays for identifying bad pixels and achieving nonuniformity correction is commonly accomplished using dark frames. This kind of calibration technique does not achieve radiometric calibration of the array since only the relative response of the detectors is computed. For this, a second calibration is sometimes utilized by looking at sources with known radiances. This process can be used to calibrate photodetectors as long as a calibration source is available and is well-characterized. A previous attempt at creating a procedure for calibrating a photodetector using the underlying Poisson nature of the photodetection required calculations of the skewness of the photodetector measurements. Reliance on the third moment of measurement meant that thousands of samples would be required in some cases to compute that moment. A photocalibration procedure is defined that requires only first and second moments of the measurements. The technique is applied to image data containing a known light source so that the accuracy of the technique can be surmised. It is shown that the algorithm can achieve accuracy of nearly 2.7% of the predicted number of photons using only 100 frames of image data.
A self-assembled three-dimensional cloak in the visible

PubMed Central

Mühlig, Stefan; Cunningham, Alastair; Dintinger, José; Farhat, Mohamed; Hasan, Shakeeb Bin; Scharf, Toralf; Bürgi, Thomas; Lederer, Falk; Rockstuhl, Carsten

2013-01-01

An invisibility cloak has been designed, realized and characterized. The cloak hides free-standing sub-wavelength three-dimensional objects at the short wavelength edge of the visible spectrum. By a bottom-up approach the cloak was self-assembled around the object. Such fabrication approach constitutes a further important step towards real world applications of cloaking; leaving the realm of curiosity. The cloak and the way it was fabricated opens an avenue for many spectacular nanooptical applications such as non-disturbing sensors and photo-detectors, highly efficient solar cells, or optical nanoantenna arrays with strongly suppressed cross-talk to mention only a few. Our results rely on the successful combination of concepts from various disciplines, i.e. chemistry, material science, and plasmonics. Consequently, this work will stimulate these fields by unraveling new paths for future research. PMID:23921452
Advances in OLED/OPD-based sensors and spectrometer-on-a-chip (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Kaudal, Rajiv; Manna, Eeshita; Fungura, Fadzai; Shinar, Ruth

2016-09-01

We describe ongoing advances toward achieving all-organic optical sensors and a spectrometer on a chip. Two-dimensional combinatorial arrays of microcavity OLEDs (μcOLEDs) with systematically varying optical cavity lengths are fabricated on a single chip by changing the thickness of different organic and/or spacer layers sandwiched between two metal electrodes (one very thin) that form the cavity. The broad spectral range is achieved by utilizing materials that result in white OLEDs (WOLEDs) when fabricated on a standard ITO substrate. The tunable and narrower emissions from the μcOLEDs serve as excitation sources in luminescent sensors and in monitoring light absorption. For each wavelength, the light from the μcOLED is partially absorbed by a sample under study and the light emitted by an electronically excited sample, or the transmitted light is detected by a photodetector (PD). To obtain a compact monitor, an organic PD (OPD) or a perovskite-based PD is integrated with the μcOLED array. We show the potential of encompassing a broader wavelength range by using WOLED materials to fabricate the μcOLEDs. The utility of the all-organic analytical devices is demonstrated by monitoring oxygen, and bioanalytes based on oxygen detection, as well as the absorption spectra of dyes.
Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.
Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

PubMed

Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

2015-06-23

A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.
32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.
Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.
Range and egomotion estimation from compound photodetector arrays with parallel optical axis using optical flow techniques.

PubMed

Chahl, J S

2014-01-20

This paper describes an application for arrays of narrow-field-of-view sensors with parallel optical axes. These devices exhibit some complementary characteristics with respect to conventional perspective projection or angular projection imaging devices. Conventional imaging devices measure rotational egomotion directly by measuring the angular velocity of the projected image. Translational egomotion cannot be measured directly by these devices because the induced image motion depends on the unknown range of the viewed object. On the other hand, a known translational motion generates image velocities which can be used to recover the ranges of objects and hence the three-dimensional (3D) structure of the environment. A new method is presented for computing egomotion and range using the properties of linear arrays of independent narrow-field-of-view optical sensors. An approximate parallel projection can be used to measure translational egomotion in terms of the velocity of the image. On the other hand, a known rotational motion of the paraxial sensor array generates image velocities, which can be used to recover the 3D structure of the environment. Results of tests of an experimental array confirm these properties.
Mid-IR colloidal quantum dot detectors enhanced by optical nano-antennas

NASA Astrophysics Data System (ADS)

Yifat, Yuval; Ackerman, Matthew; Guyot-Sionnest, Philippe

2017-01-01

We report the fabrication of a colloidal quantum dot based photodetector designed for the 3-5 μm mid infrared wavelength range incorporated with optical nano-antenna arrays to enhance the photocurrent. The fabricated arrays exhibit a resonant behavior dependent on the length of the nano-antenna rods, in good agreement with numerical simulation. The device exhibits a three-fold increase in the spectral photoresponse compared to a photodetector device without antennas, and the resonance is polarized parallel to the antenna orientation. We numerically estimate the device quantum efficiency and investigate its bias dependence.
High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material

DOEpatents

Grann, Eric B.; Holcomb, David E.

2000-01-01

An optical measurement apparatus is provided for measuring the thickness of a moving sheet material (18). The apparatus has a pair of optical measurement systems (21, 31) attached to opposing surfaces (14, 16) of a rigid support structure (10). A pair of high-power laser diodes (20,30) and a pair of photodetector arrays (22,32) are attached to the opposing surfaces. Light emitted from the laser diodes is reflected off of the sheet material surfaces (17, 19) and received by the respective photodetector arrays. An associated method for implementing the apparatus is also provided.
Self-assembly and hierarchical patterning of aligned organic nanowire arrays by solvent evaporation on substrates with patterned wettability.

PubMed

Bao, Rong-Rong; Zhang, Cheng-Yi; Zhang, Xiu-Juan; Ou, Xue-Mei; Lee, Chun-Sing; Jie, Jian-Sheng; Zhang, Xiao-Hong

2013-06-26

The controlled growth and alignment of one-dimensional organic nanostructures at well-defined locations considerably hinders the integration of nanostructures for electronic and optoelectronic applications. Here, we demonstrate a simple process to achieve the growth, alignment, and hierarchical patterning of organic nanowires on substrates with controlled patterns of surface wettability. The first-level pattern is confined by the substrate patterns of wettability. Organic nanostructures are preferentially grown on solvent wettable regions. The second-level pattern is the patterning of aligned organic nanowires deposited by controlling the shape and movement of the solution contact lines during evaporation on the wettable regions. This process is controlled by the cover-hat-controlled method or vertical evaportation method. Therefore, various new patterns of organic nanostructures can be obtained by combing these two levels of patterns. This simple method proves to be a general approach that can be applied to other organic nanostructure systems. Using the as-prepared patterned nanowire arrays, an optoelectronic device (photodetector) is easily fabricated. Hence, the proposed simple, large-scale, low-cost method of preparing patterns of highly ordered organic nanostructures has high potential applications in various electronic and optoelectronic devices.
Simulation of Small-Pitch HgCdTe Photodetectors

NASA Astrophysics Data System (ADS)

Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

2017-09-01

Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical simulations of long-wavelength infrared HgCdTe FPAs, with 3 μm, 5 μm, and 10 μm pitch. Numerical simulations predict significant cavity effects, brought by the array periodicity. The optical and electrical contributions to spectral inter-pixel crosstalk are investigated as functions of pixel pitch, by illuminating the FPAs with Gaussian beams focused on the central pixel. Despite the FPAs being planar with 100% pixel duty cycle, our calculations suggest that the total crosstalk with nearest-neighbor pixels could be kept acceptably small also with pixels only 3 μ m wide and a diffraction-limited optical system.
A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

PubMed Central

Zhai, Tianyou; Fang, Xiaosheng; Liao, Meiyong; Xu, Xijin; Zeng, Haibo; Yoshio, Bando; Golberg, Dmitri

2009-01-01

One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO2, Cu2O, Ga2O3, Fe2O3, In2O3, CdO, CeO2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area. PMID:22454597
Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.
Lateral conduction infrared photodetector

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM

2011-09-20

A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.
Wide bandwidth and high resolution planar filter array based on DBR-metasurface-DBR structures

DOE PAGES

Horie, Yu; Arbabi, Amir; Arbabi, Ehsan; ...

2016-05-19

Here, we propose and experimentally demonstrate a planar array of optical bandpass filters composed of low loss dielectric metasurface layers sandwiched between two distributed Bragg reflectors (DBRs). The two DBRs form a Fabry-Perot resonator whose center wavelength is controlled by the design of the transmissive metasurface layer which functions as a phase shifting element. We demonstrate an array of bandpass filters with spatially varying center wavelengths covering a wide range of operation wavelengths of 250nm around λ = 1550nm (Δλ/λ = 16%). The center wavelengths of each filter are independently controlled only by changing the in-plane geometry of the sandwichedmore » metasurfaces, and the experimentally measured quality factors are larger than 700. The demonstrated filter array can be directly integrated on top of photodetector arrays to realize on-chip high-resolution spectrometers with free-space coupling.« less
64 x 64 thresholding photodetector array for optical pattern recognition

NASA Astrophysics Data System (ADS)

Langenbacher, Harry; Chao, Tien-Hsin; Shaw, Timothy; Yu, Jeffrey W.

1993-10-01

A high performance 32 X 32 peak detector array is introduced. This detector consists of a 32 X 32 array of thresholding photo-transistor cells, manufactured with a standard MOSIS digital 2-micron CMOS process. A built-in thresholding function that is able to perform 1024 thresholding operations in parallel strongly distinguishes this chip from available CCD detectors. This high speed detector offers responses from one to 10 milliseconds that is much higher than the commercially available CCD detectors operating at a TV frame rate. The parallel multiple peaks thresholding detection capability makes it particularly suitable for optical correlator and optoelectronically implemented neural networks. The principle of operation, circuit design and the performance characteristics are described. Experimental demonstration of correlation peak detection is also provided. Recently, we have also designed and built an advanced version of a 64 X 64 thresholding photodetector array chip. Experimental investigation of using this chip for pattern recognition is ongoing.
Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei

2016-06-01

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

Quantum Well and Quantum Dot Modeling for Advanced Infrared Detectors and Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Ting, David; Gunapala, S. D.; Bandara, S. V.; Hill, C. J.

2006-01-01

This viewgraph presentation reviews the modeling of Quantum Well Infrared Detectors (QWIP) and Quantum Dot Infrared Detectors (QDIP) in the development of Focal Plane Arrays (FPA). The QWIP Detector being developed is a dual band detector. It is capable of running on two bands Long-Wave Infrared (LWIR) and Medium Wavelength Infrared (MWIR). The same large-format dual-band FPA technology can be applied to Quantum Dot Infrared Photodetector (QDIP) with no modification, once QDIP exceeds QWIP in single device performance. Details of the devices are reviewed.
Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

NASA Astrophysics Data System (ADS)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.
High resolution scintillation detector with semiconductor readout

DOEpatents

Levin, Craig S.; Hoffman, Edward J.

2000-01-01

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.
Fiber optical assembly for fluorescence spectrometry

DOEpatents

Carpenter, II, Robert W.; Rubenstein, Richard; Piltch, Martin; Gray, Perry

2010-12-07

A system for analyzing a sample for the presence of an analyte in a sample. The system includes a sample holder for containing the sample; an excitation source, such as a laser, and at least one linear array radially disposed about the sample holder. Radiation from the excitation source is directed to the sample, and the radiation induces fluorescent light in the sample. Each linear array includes a plurality of fused silica optical fibers that receive the fluorescent light and transmits a fluorescent light signal from the first end to an optical end port of the linear array. An end port assembly having a photo-detector is optically coupled to the optical end port. The photo-detector detects the fluorescent light signal and converts the fluorescent light signal into an electrical signal.
Anisotropic Broadband Photoresponse of Layered Type-II Weyl Semimetal MoTe2.

PubMed

Lai, Jiawei; Liu, Xin; Ma, Junchao; Wang, Qinsheng; Zhang, Kenan; Ren, Xiao; Liu, Yinan; Gu, Qiangqiang; Zhuo, Xiao; Lu, Wei; Wu, Yang; Li, Yuan; Feng, Ji; Zhou, Shuyun; Chen, Jian-Hao; Sun, Dong

2018-05-01

Photodetectors based on Weyl semimetal promise extreme performance in terms of highly sensitive, broadband and self-powered operation owing to its extraordinary material properties. Layered Type-II Weyl semimetal that break Lorentz invariance can be further integrated with other two-dimensional materials to form van der Waals heterostructures and realize multiple functionalities inheriting the advantages of other two-dimensional materials. Herein, we report the realization of a broadband self-powered photodetector based on Type-II Weyl semimetal T d -MoTe 2 . The prototype metal-MoTe 2 -metal photodetector exhibits a responsivity of 0.40 mA W -1 and specific directivity of 1.07 × 10 8 Jones with 43 μs response time at 532 nm. Broadband responses from 532 nm to 10.6 μm are experimentally tested with a potential detection range extendable to far-infrared and terahertz. Furthermore, we identify the response of the detector is polarization angle sensitive due to the anisotropic response of MoTe 2 . The anisotropy is found to be wavelength dependent, and the degree of anisotropy increases as the excitation wavelength gets closer to the Weyl nodes. In addition, with power and temperature dependent photoresponse measurements, the photocurrent generation mechanisms are investigated. Our results suggest this emerging class of materials can be harnessed for broadband angle sensitive, self-powered photodetection with decent responsivities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Semiconductor wire array structures, and solar cells and photodetectors based on such structures

DOEpatents

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.
Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.
Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.
Macroscopic Violation of Three Cauchy-Schwarz Inequalities Using Correlated Light Beams From an Infra-Red Emitting Semiconductor Diode Array

NASA Technical Reports Server (NTRS)

Edwards, P. J.; Huang, X.; Li, Y. Q. (Editor); Wang, Y. Z. (Editor)

1996-01-01

We briefly review quantum mechanical and semi-classical descriptions of experiments which demonstrate the macroscopic violation of the three Cauchy-Schwarz inequalities: g(sup 2)(sub 11)(0) greater than or equal to 1; g(sup 2)(sub 11)(0) greater than or equal to g(sup 2)(sub 11)(t), (t approaches infinity); (the absolute value of g(sup 2)(sub 11)(0))(exp 2) less than or equal to g(sup 2)(sub 11)(0) g(sup 2)(sub 11)(0). Our measurements demonstrate the violation, at macroscopic intensities, of each of these inequalities. We show that their violation, although weak, can be demonstrated through photodetector current covariance measurements on correlated sub-Poissonian Poissonian, and super Poissonian light beams. Such beams are readily generated by a tandem array of infrared-emitting semiconductor junction diodes. Our measurements utilize an electrically coupled array of one or more infrared-emitting diodes, optically coupled to a detector array. The emitting array is operated in such a way as to generate highly correlated beams of variable photon Fano Factor. Because the measurements are made on time scales long compared with the first order coherence time and with detector areas large compared with the corresponding coherence areas, first order interference effects are negligible. The first and second inequalities are violated, as expected, when a sub-Poissonian light beam is split and the intensity fluctuations of the two split beams are measured by two photodetectors and subsequently cross-correlated. The third inequality is violated by bunched (as well as anti-bunched) beams of equal intensity provided the measured cross correlation coefficient exceeds (F - 1)/F, where F is the measured Fano Factor of each beam. We also investigate the violation for the case of unequal beams.
Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems

DTIC Science & Technology

1994-02-06

Ultra-Low Noise , High Performance lll-V Quantum Well Infrared Photodetectors ( QWIPs ) for Focal Plane Array Staring Image Sensor Systems i Submitted to i... QWIP , the noise is increased by the square root of the gain ,(g and the detectivity D" is reduced by this same factor. As shown in Fig. 3.18, the optimum...PI .4totekotP044l .t.,me. O IM A. AGENCY use ONLY (Leave blank) 1. y.p0AT J *fY E AND OATES CO r S - 0 1 DWveop cTteOf Ultra-Low Noise , High
Megavoltage imaging with a photoconductor based sensor

DOEpatents

Partain, Larry Dean [Los Altos, CA; Zentai, George [Mountain View, CA

2011-02-08

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
Magnetic nanohole superlattices

DOEpatents

Liu, Feng

2013-05-14

A magnetic material is disclosed including a two-dimensional array of carbon atoms and a two-dimensional array of nanoholes patterned in the two-dimensional array of carbon atoms. The magnetic material has long-range magnetic ordering at a temperature below a critical temperature Tc.
Waterproof stretchable optoelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Kim, Rak-Hwan; Kim, Dae-Hyeong

Described herein are flexible and stretchable LED arrays and methods utilizing flexible and stretchable LED arrays. Assembly of flexible LED arrays alongside flexible plasmonic crystals is useful for construction of fluid monitors, permitting sensitive detection of fluid refractive index and composition. Co-integration of flexible LED arrays with flexible photodetector arrays is useful for construction of flexible proximity sensors. Application of stretchable LED arrays onto flexible threads as light emitting sutures provides novel means for performing radiation therapy on wounds.
Metrology System for a Large, Somewhat Flexible Telescope

NASA Technical Reports Server (NTRS)

Liebe, Carl Christian; Bartman, Randall; Cook, Walter; Craig, William

2009-01-01

A proposed metrology system would be incorporated into a proposed telescope that would include focusing optics on a rigid bench connected via a deployable mast to another rigid bench holding a focal-plane array of photon counting photodetectors. Deformations of the deployable mast would give rise to optical misalignments that would alter the directions (and, hence, locations) of incidence of photons on the focal plane. The metrology system would measure the relative displacement of the focusing- optics bench and the focal-plane array bench. The measurement data would be used in post-processing of the digitized photodetector outputs to compensate for the mast-deformation-induced changes in the locations of incidence of photons on the focal plane, thereby making it possible to determine the original directions of incidence of photons with greater accuracy. The proposed metrology system is designed specifically for the Nuclear Spectroscopic Telescope Array (NuSTAR) a proposed spaceborne x-ray telescope. The basic principles of design and operation are also applicable to other large, somewhat flexible telescopes, both terrestrial and spaceborne. In the NuSTAR, the structural member connecting the optical bench and the photodetector array would be a 10-m-long deployable mast, and there is a requirement to keep errors in measured directions of incidence of photons below 10 arc seconds (3 sigma). The proposed system would include three diode lasers that would be mounted on the focusing-optics bench. For clarity, only one laser is shown in the figure, which is a greatly simplified schematic diagram of the system. Each laser would be aimed at a position-sensitive photodiode that would be mounted on the detector bench alongside the aforementioned telescope photodetector array. The diode lasers would operate at a wavelength of 830 nm, each at a power of 200 mW. Each laser beam would be focused to a spot of .1-mm diameter on the corresponding position-sensitive photodiode. To reduce the effect of sunlight on the measurements, a one-stage light baffle and an 830-nm transmission filter of 10-nm bandwidth would be placed in front of the position- sensitive photodiode. For each metrology reading, the output of the position-sensitive detector would be sampled and digitized twice: once with the lasers turned on, then once with the lasers turned off. The data from these two sets of samples would be subtracted from each other to further reduce the effects of sun glints or other background light sources.
High-quality infrared imaging with graphene photodetectors at room temperature.

PubMed

Guo, Nan; Hu, Weida; Jiang, Tao; Gong, Fan; Luo, Wenjin; Qiu, Weicheng; Wang, Peng; Liu, Lu; Wu, Shiwei; Liao, Lei; Chen, Xiaoshuang; Lu, Wei

2016-09-21

Graphene, a two-dimensional material, is expected to enable broad-spectrum and high-speed photodetection because of its gapless band structure, ultrafast carrier dynamics and high mobility. We demonstrate a multispectral active infrared imaging by using a graphene photodetector based on hybrid response mechanisms at room temperature. The high-quality images with optical resolutions of 418 nm, 657 nm and 877 nm and close-to-theoretical-limit Michelson contrasts of 0.997, 0.994, and 0.996 have been acquired for 565 nm, 1550 nm, and 1815 nm light imaging measurements by using an unbiased graphene photodetector, respectively. Importantly, by carefully analyzing the results of Raman mapping and numerical simulations for the response process, the formation of hybrid photocurrents in graphene detectors is attributed to the synergistic action of photovoltaic and photo-thermoelectric effects. The initial application to infrared imaging will help promote the development of high performance graphene-based infrared multispectral detectors.
Recent Developments and Applications of Quantum Well Infrared Photodetector Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Gunapala, S. D.; Bandara, S. V.

2000-01-01

There are many applications that require long wavelength, large, uniform, reproducible, low cost, stable, and radiation-hard infrared (IR) focal plane arrays (FPAs). For example, the absorption lines of many gas molecules, such as ozone, water, carbon monoxide, carbon dioxide, and nitrous oxide occur in the wavelength region from 3 to 18 micron. Thus, IR imaging systems that operate in the long wavelength IR (LWIR) region (6 - 18 micron) are required in many space borne applications such as monitoring the global atmospheric temperature profiles, relative humidity profiles, cloud characteristics, and the distribution of minor constituents in the atmosphere which are being planned for future NASA Earth and planetary remote sensing systems. Due to higher radiation hardness, lower 1/f noise, and larger array size the GaAs based Quantum Well Infrared Photodetector (QWIP) FPAs are very attractive for such space borne applications compared to intrinsic narrow band gap detector arrays. In this presentation we will discuss the optimization of the detector design, material growth and processing that has culminated in realization of large format long-wavelength QWIP FPAs, portable and miniature LWIR cameras, holding forth great promise for myriad applications in 6-18 micron wavelength range in science, medicine, defense and industry. In addition, we will present some system demonstrations using broadband, two-color, and high quantum efficiency long-wavelength QWIP FPAs.
Efficient processing of two-dimensional arrays with C or C++

USGS Publications Warehouse

Donato, David I.

2017-07-20

Because fast and efficient serial processing of raster-graphic images and other two-dimensional arrays is a requirement in land-change modeling and other applications, the effects of 10 factors on the runtimes for processing two-dimensional arrays with C and C++ are evaluated in a comparative factorial study. This study’s factors include the choice among three C or C++ source-code techniques for array processing; the choice of Microsoft Windows 7 or a Linux operating system; the choice of 4-byte or 8-byte array elements and indexes; and the choice of 32-bit or 64-bit memory addressing. This study demonstrates how programmer choices can reduce runtimes by 75 percent or more, even after compiler optimizations. Ten points of practical advice for faster processing of two-dimensional arrays are offered to C and C++ programmers. Further study and the development of a C and C++ software test suite are recommended.Key words: array processing, C, C++, compiler, computational speed, land-change modeling, raster-graphic image, two-dimensional array, software efficiency
A gold hybrid structure as optical coupler for quantum well infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Jiayi; Li, Qian; Jing, Youliang

2014-08-28

A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light.more » The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.« less
Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

PubMed

Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

2017-06-14

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.
Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

DTIC Science & Technology

2008-01-21

circuitry. The photonics can use, for example, microbolometers and III-V photodetectors as well as III-V interband cascade and quantum cascade lasers...chips using inputs from several sensors. (4) imaging: focal - plane - array imager with integral readout, infrared-to-visible image converter chip, (5... photodetectors , type II interband cascades and QCLs. I would integrate the cascades in LIO using a technique similar to that developed by John Bower’s

Imaging System With Confocally Self-Detecting Laser.

DOEpatents

Webb, Robert H.; Rogomentich, Fran J.

1996-10-08

The invention relates to a confocal laser imaging system and method. The system includes a laser source, a beam splitter, focusing elements, and a photosensitive detector. The laser source projects a laser beam along a first optical path at an object to be imaged, and modulates the intensity of the projected laser beam in response to light reflected from the object. A beam splitter directs a portion of the projected laser beam onto a photodetector. The photodetector monitors the intensity of laser output. The laser source can be an electrically scannable array, with a lens or objective assembly for focusing light generated by the array onto the object of interest. As the array is energized, its laser beams scan over the object, and light reflected at each point is returned by the lens to the element of the array from which it originated. A single photosensitive detector element can generate an intensity-representative signal for all lasers of the array. The intensity-representative signal from the photosensitive detector can be processed to provide an image of the object of interest.
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

PubMed

Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

2012-11-01

The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.
Photovoltaic-Pyroelectric Coupled Effect Induced Electricity for Self-Powered Photodetector System.

PubMed

Ma, Nan; Zhang, Kewei; Yang, Ya

2017-12-01

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7-4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8-20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near-UV irradiations. Here, a ferroelectric BaTiO 3 film-based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light-induced photovoltaic-pyroelectric coupled effect. A self-powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Three-dimensional laser velocimeter simultaneity detector

NASA Technical Reports Server (NTRS)

Brown, James L. (Inventor)

1990-01-01

A three-dimensional laser Doppler velocimeter has laser optics for a first channel positioned to create a probe volume in space, and laser optics and for second and third channels, respectively, positioned to create entirely overlapping probe volumes in space. The probe volumes and overlap partially in space. The photodetector is positioned to receive light scattered by a particle present in the probe volume, while photodetectors and are positioned to receive light scattered by a particle present in the probe volume. The photodetector for the first channel is directly connected to provide a first channel analog signal to frequency measuring circuits. The first channel is therefore a primary channel for the system. Photodetectors and are respectively connected through a second channel analog signal attenuator to frequency measuring circuits and through a third channel analog signal attenuator to frequency measuring circuits. The second and third channels are secondary channels, with the second and third channels analog signal attenuators and controlled by the first channel measurement burst signal on line. The second and third channels analog signal attenuators and attenuate the second and third channels analog signals only when the measurement burst signal is false.
Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

PubMed

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.
The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.
Multilevel photonic modules for millimeter-wave phased-array antennas

NASA Astrophysics Data System (ADS)

Paolella, Arthur C.; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

1998-11-01

Optical signal distribution for phased array antennas in communication system is advantageous to designers. By distributing the microwave and millimeter wave signal through optical fiber there is the potential for improved performance and lower weight. In addition when applied to communication satellites this weight saving translates into substantially reduced launch costs. The goal of the Phase I Small Business Innovation Research (SBIR) Program is the development of multi-level photonic modules for phased array antennas. The proposed module with ultimately comprise of a monolithic, InGaAs/InP p-i-n photodetector-p-HEMT power amplifier, opto-electronic integrated circuit, that has 44 GHz bandwidth and output power of 50 mW integrated with a planar antenna. The photodetector will have a high quantum efficiency and will be front-illuminated, thereby improved optical performance. Under Phase I a module was developed using standard MIC technology with a high frequency coaxial feed interconnect.
Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

PubMed Central

Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

2016-01-01

High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692
Quantum Well Intrasubband Photodetector for Far Infared and Terahertz Radiation Detection

NASA Technical Reports Server (NTRS)

Ting, David Z. -Y.; Chang, Yia-Chung; Bandara, Sumith V.; Gunapala, Sarath D.

2007-01-01

The authors present a theoretical analysis on the possibility of using the dopant-assisted intrasubband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. The authors describe the proposed concept of the quantum well intrasubband photodetector (QWISP), which is a compact semiconductor heterostructure device compatible with existing GaAs focal-plane array technology, and present theoretical results demonstrating strong normal-incidence absorption and responsivity in the QWISP.
VizieR Online Data Catalog: NGC 300 giant dust clouds (Riener+, 2018)

NASA Astrophysics Data System (ADS)

Riener, M.; Faesi, C. M.; Forbrich, J.; Lada, C. J.

2017-11-01

We obtained photometric observations of NGC 300 with the Herschel Space Observatory (PI: Jan Forbrich) with two of its instruments,the Spectral and Photometric Imaging Receiver (SPIRE) and the Photodetector Array Camera and Spectrometer (PACS). The SPIRE observations took place on 2012 May 11 with a total exposure time of 4558s. The two PACS observations were carried out on 2012 June 25 with a total exposure time of 3245 and 3803s. (2 data files).
Theory and design of compact hybrid microphone arrays on two-dimensional planes for three-dimensional soundfield analysis.

PubMed

Chen, Hanchi; Abhayapala, Thushara D; Zhang, Wen

2015-11-01

Soundfield analysis based on spherical harmonic decomposition has been widely used in various applications; however, a drawback is the three-dimensional geometry of the microphone arrays. In this paper, a method to design two-dimensional planar microphone arrays that are capable of capturing three-dimensional (3D) spatial soundfields is proposed. Through the utilization of both omni-directional and first order microphones, the proposed microphone array is capable of measuring soundfield components that are undetectable to conventional planar omni-directional microphone arrays, thus providing the same functionality as 3D arrays designed for the same purpose. Simulations show that the accuracy of the planar microphone array is comparable to traditional spherical microphone arrays. Due to its compact shape, the proposed microphone array greatly increases the feasibility of 3D soundfield analysis techniques in real-world applications.
Atomically-thick two-dimensional crystals: electronic structure regulation and energy device construction.

PubMed

Sun, Yongfu; Gao, Shan; Xie, Yi

2014-01-21

Atomically-thick two-dimensional crystals can provide promising opportunities to satisfy people's requirement of next-generation flexible and transparent nanodevices. However, the characterization of these low-dimensional structures and the understanding of their clear structure-property relationship encounter many great difficulties, owing to the lack of long-range order in the third dimensionality. In this review, we survey the recent progress in fine structure characterization by X-ray absorption fine structure spectroscopy and also overview electronic structure modulation by density-functional calculations in the ultrathin two-dimensional crystals. In addition, we highlight their structure-property relationship, transparent and flexible device construction as well as wide applications in photoelectrochemical water splitting, photodetectors, thermoelectric conversion, touchless moisture sensing, supercapacitors and lithium ion batteries. Finally, we outline the major challenges and opportunities that face the atomically-thick two-dimensional crystals. It is anticipated that the present review will deepen people's understanding of this field and hence contribute to guide the future design of high-efficiency energy-related devices.
Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.
Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.
Focal plane infrared readout circuit

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2002-01-01

An infrared imager, such as a spectrometer, includes multiple infrared photodetectors and readout circuits for reading out signals from the photodetectors. Each readout circuit includes a buffered direct injection input circuit including a differential amplifier with active feedback provided through an injection transistor. The differential amplifier includes a pair of input transistors, a pair of cascode transistors and a current mirror load. Photocurrent from a photodetector can be injected onto an integration capacitor in the readout circuit with high injection efficiency at high speed. A high speed, low noise, wide dynamic range linear infrared multiplexer array for reading out infrared detectors with large capacitances can be achieved even when short exposure times are used. The effect of image lag can be reduced.
Emerging technologies for high performance infrared detectors

NASA Astrophysics Data System (ADS)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.
Fresnel Lenses for Wide-Aperture Optical Receivers

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

2004-01-01

Wide-aperture receivers for freespace optical communication systems would utilize Fresnel lenses instead of conventional telescope lenses, according to a proposal. Fresnel lenses weigh and cost much less than conventional lenses having equal aperture widths. Plastic Fresnel lenses are commercially available in diameters up to 5 m large enough to satisfy requirements for aperture widths of the order of meters for collecting sufficient light in typical long-distance free-space optical communication systems. Fresnel lenses are not yet suitable for high-quality diffraction-limited imaging, especially in polychromatic light. However, optical communication systems utilize monochromatic light, and there is no requirement for high-quality imaging; instead, the basic requirement for an optical receiver is to collect the incoming monochromatic light over a wide aperture and concentrate the light onto a photodetector. Because of lens aberrations and diffraction, the light passing through any lens is focused to a blur circle rather than to a point. Calculations for some representative cases of wide-aperture non-diffraction-limited Fresnel lenses have shown that it should be possible to attain blur-circle diameters of less than 2 mm. Preferably, the blur-circle diameter should match the width of the photodetector. For most high-bandwidth communication applications, the required photodetector diameters would be about 1 mm. In a less-preferable case in which the blur circle was wider than a single photodetector, it would be possible to occupy the blur circle with an array of photodetectors. As an alternative to using a single large Fresnel lens, one could use an array of somewhat smaller lenses to synthesize the equivalent aperture area. Such a configuration might be preferable in a case in which a single Fresnel lens of the requisite large size would be impractical to manufacture, and the blur circle could not be made small enough. For example one could construct a square array of four 5-m-diameter Fresnel lenses to obtain the same light-collecting area as that of a single 10-m-diameter lens. In that case (see figure), the light collected by each Fresnel lens could be collimated, the collimated beams from the four Fresnel lenses could be reflected onto a common offaxis paraboloidal reflector, and the paraboloidal reflector would focus the four beams onto a single photodetector. Alternatively, detected signal from each detector behind each lens would be digitized before summing the signals.
Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

PubMed

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, L. L.; Guo, X. G., E-mail: xgguo@mail.sim.ac.cn; Fu, Z. L.

Strong and sharp photocurrent peak at longitudinal optical (LO) phonon frequency (8.87 THz) is found in GaAs/(Al,Ga)As terahertz quantum-well photodetectors (QWPs). Two mesa-structure terahertz QWPs with and without one-dimensional metal grating are fabricated to investigate the behavior of such photoresponse peak. The experimental and simulation results indicate that the photocurrent peak originates from a two-step process. First, at the LO phonon frequency, a large number of non-equilibrium LO phonons are excited by the incident electromagnetic field, and the electromagnetic energy is localized and enhanced in the thin multi-quantum-well layer. Second, through the Frohlich interaction, the localized electrons are excited tomore » continuum states by absorbing the non-equilibrium LO phonons, which leads to the strong photoresponse peak. This finding is useful for exploring strong light-matter interaction and realizing high sensitive terahertz photodetectors.« less
New measuring system for the distribution of a magnetic force by using an optical fiber

NASA Astrophysics Data System (ADS)

Ishigaki, H.; Oya, T.; Itoh, M.; Hida, A.; Iwata, K.

1993-01-01

A new measuring system using an optical fiber and a position sensing photodetector was developed to measure a three-dimensional distribution of a magnetic force. A steel ball attached to a cantilever made of an optical fiber generated force in a magnetic field. The displacement of the ball due to the force was detected by a position-sensing photodetector with the capability of detecting two-directional coordinates of the position. By scanning the sensing system in a magnetic field, we obtained distributions of two-directional component of the magnetic force vector. The component represents the gradient of a squared magnetic field. The usefulness of the system for measuring the magnetic field distribution in a narrow clearance and for evaluating superconducting machine components such as magnetic bearings was verified experimentally.
High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

PubMed

Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

2018-03-07

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.
Photodetectors using III-V nitrides

DOEpatents

Moustakas, Theodore D.

1998-01-01

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.
Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

PubMed

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.
Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

PubMed

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.
Three-dimensional hierarchical GeSe2 nanostructures for high performance flexible all-solid-state supercapacitors.

PubMed

Wang, Xianfu; Liu, Bin; Wang, Qiufan; Song, Weifeng; Hou, Xiaojuan; Chen, Di; Cheng, Yi-bing; Shen, Guozhen

2013-03-13

Highly flexible stacked and in-plane all-solid-state supercapacitors are fabricated on 3D hierarchical GeSe2 nanostructures with high performance, and, when configured as a self-powered photodetector nanosystem, can be used to power CdSe nanowire photodetectors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Waczynski, A.; La, A.; Sundaram, M.; Costard, E.; Jhabvala, C.; Kan, E.; Kahle, D.; Foltz, R.;

2011-01-01

The focal plane assembly for the Thermal Infrared Sensor (TIRS) instrument on NASA's Landsat Data Continuity Mission (LDCM) consists of three 512 x 640 GaAs Quantum Well Infrared Photodetector (QWIP) arrays. The three arrays are precisely mounted and aligned on a silicon carrier substrate to provide a continuous viewing swath of 1850 pixels in two spectral bands defined by filters placed in close proximity to the detector surfaces. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). QWIP arrays were evaluated from four laboratories; QmagiQ, (Nashua, NH), Army Research Laboratory, (Adelphi, MD}, NASA/ Goddard Space Flight Center, (Greenbelt, MD) and Thales, (Palaiseau, France). All were found to be suitable. The final discriminating parameter was the spectral uniformity of individual pixels relative to each other. The performance of the QWIP arrays and the fully assembled, NASA flight-qualified, focal plane assembly will be reviewed. An overview of the focal plane assembly including the construction and test requirements of the focal plane will also be described.

Photodetectors using III-V nitrides

DOEpatents

Moustakas, T.D.

1998-12-08

A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.
Stability enhancement and electronic tunability of two-dimensional SbIV compounds via surface functionalization

NASA Astrophysics Data System (ADS)

Zhou, Wenhan; Guo, Shiying; Liu, Xuhai; Cai, Bo; Song, Xiufeng; Zhu, Zhen; Zhang, Shengli

2018-01-01

We propose a family of hydrogenated- and halogenated-SbIV (SbIVX-2) materials that simultaneously have two-dimensional (2D) structures, high stability and appealing electronic properties. Based on first-principles total-energy and vibrational-spectra calculations, SbIVX-2 monolayers are found both thermally and dynamically stable. Varying IV and X elements can rationally tune the electronic properties of SbIVX-2 monolayers, effectively modulating the band gap from 0 to 3.42 eV. Regarding such superior stability and broad band-gap range, SbIVX-2 monolayers are expected to be synthesized in experiments and taken as promising candidates for low-dimensional electronic and optoelectronic devices, such as blue-to-ultraviolet light-emitting diodes (LED) and photodetectors.
640 x 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Hill, Cory J.; Ting, David Z.; Liu, John K.; Rafol, Sir B.; Blazejewski, Edward R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, Sanjay;

2007-01-01

Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 micrometers, with peak detectivity reaching approximately 1 X 10(exp 10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.

Tailored Engineering of an Unusual (C4 H9 NH3 )2 (CH3 NH3 )2 Pb3 Br10 Two-Dimensional Multilayered Perovskite Ferroelectric for a High-Performance Photodetector.

PubMed

Li, Lina; Sun, Zhihua; Wang, Peng; Hu, Weida; Wang, Sasa; Ji, Chengmin; Hong, Maochun; Luo, Junhua

2017-09-25

Two-dimensional (2D) layered hybrid perovskites have shown great potential in optoelectronics, owing to their unique physical attributes. However, 2D hybrid perovskite ferroelectrics remain rare. The first hybrid ferroelectric with unusual 2D multilayered perovskite framework, (C 4 H 9 NH 3 ) 2 (CH 3 NH 3 ) 2 Pb 3 Br 10 (1), has been constructed by tailored alloying of the mixed organic cations into 3D prototype of CH 3 NH 3 PbBr 3 . Ferroelectricity is created through molecular reorientation and synergic ordering of organic moieties, which are unprecedented for the known 2D multilayered hybrid perovskites. Single-crystal photodetectors of 1 exhibit fascinating performances, including extremely low dark currents (ca. 10 -12 A), large on/off current ratios (ca. 2.5×10 3 ), and very fast response rate (ca. 150 μs). These merits are superior to integrated detectors of other 2D perovskites, and compete with the most active CH 3 NH 3 PbI 3 . © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

NASA Astrophysics Data System (ADS)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.
High-Switching-Ratio Photodetectors Based on Perovskite CH₃NH₃PbI₃ Nanowires.

PubMed

Zhang, Xin; Liu, Caichi; Ren, Gang; Li, Shiyun; Bi, Chenghao; Hao, Qiuyan; Liu, Hui

2018-05-10

Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH₃NH₃PbI₃ nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH₃NH₃PbI₃ thin films, reports on the fabrication of CH₃NH₃PbI₃ nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH₃NH₃PbI₃ nanowires on a substrate without mesoporous TiO₂ or Al₂O₃. The size and density of CH₃NH₃PbI₃ nanowires can be easily controlled by changing the PbI₂ precursor concentration. The as-prepared CH₃NH₃PbI₃ nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 10 11 jones under 532 nm light illumination (40 mW/cm²) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH₃NH₃PbI₃ nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.
A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.
Technology Development for AGIS (Advanced Gamma-ray Imaging System).

NASA Astrophysics Data System (ADS)

Krennrich, Frank

2008-04-01

Next-generation arrays of atmospheric Cherenkov telescopes are at the conceptual planning stage and each could consist of on the order of 100 telescopes. The two currently-discussed projects AGIS in the US and CTA in Europe, have the potential to achieve an order of magnitude better sensitivity for Very High Energy (VHE) gamma-ray observations over state-to-the-art observatories. These projects require a substantial increase in scale from existing 4-telescope arrays such as VERITAS and HESS. The optimization of a large array requires exploring cost reduction and research and development for the individual elements while maximizing their performance as an array. In this context, the technology development program for AGIS will be discussed. This includes developing new optical designs, evaluating new types of photodetectors, developing fast trigger systems, integrating fast digitizers into highly-pixilated cameras, and reliability engineering of the individual components.
Detection of radio-frequency modulated optical signals by two and three terminal microwave devices

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Simons, R. N.; Wojtczuk, S.

1987-01-01

An interdigitated photoconductor (two terminal device) on GaAlAs/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaAlAs/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time, and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodetectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.
Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge-Si structure with Ge quantum dots for portable thermophotovoltaic converters

NASA Astrophysics Data System (ADS)

Pakhanov, N. A.; Pchelyakov, O. P.; Yakimov, A. I.; Voitsekhovskii, A. V.

2017-03-01

This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a silicon matrix, which ensures an increase in the external quantum yield and open-circuit voltage. It is shown on this photodetector that there is a great increase and broadening in sensitivity up to λ = 2.1 μm, which coincides with the main radiation range of a black (gray) body at the emitter temperatures from 1200 to 1700 °C, practically used in thermophotovoltaic converters. This state of the ensemble of Ge quantum dots by means of molecular beam epitaxy can be obtained only under the condition of low growth temperature (250-300 °C). It is established that, below the Si absorption edge, photoresponse on the photodetectors under consideration is determined by two main mechanisms: absorption on the ensemble of Ge quantum dots and Fowler emission. It is shown by the analysis of the Raman scattering spectra on the optical photons of Ge-Si structures that the quantum efficiency of photodetectors based on them in the first case is due to the degree of nonuniform stress relaxation in the array of Ge quantum dots. The photoresponse directly associated with the Ge quantum dots is manifested on Schottky diodes with a superthin intermediate oxide layer SiO2, which eliminates the second mechanism. In further development, the proposed photodetector architecture with pseudomorphic Ge quantum dots can be used both for portable thermophotovoltaic converters and fiber-optic data transmission systems at wavelengths corresponding to basic telecommunication standards (λ = 0.85, 1.3 and 1.55, 1.3, and 1.55 μm) on the basis of silicon technologies.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

NASA Astrophysics Data System (ADS)

Gogurla, Narendar; Kundu, Subhas C.; Ray, Samit K.

2017-04-01

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼105 as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.
Development of a photodiode array biochip using a bipolar semiconductor and its application to detection of human papilloma virus.

PubMed

Baek, Taek Jin; Park, Pan Yun; Han, Kwi Nam; Kwon, Ho Taik; Seong, Gi Hun

2008-03-01

We describe a DNA microarray system using a bipolar integrated circuit photodiode array (PDA) chip as a new platform for DNA analysis. The PDA chip comprises an 8 x 6 array of photodiodes each with a diameter of 600 microm. Each photodiode element acts both as a support for an immobilizing probe DNA and as a two-dimensional photodetector. The usefulness of the PDA microarray platform is demonstrated by the detection of high-risk subtypes of human papilloma virus (HPV). The polymerase chain reaction (PCR)-amplified biotinylated HPV target DNA was hybridized with the immobilized probe DNA on the photodiode surface, and the chip was incubated in an anti-biotin antibody-conjugated gold nanoparticle solution. The silver enhancement by the gold nanoparticles bound to the biotin of the HPV target DNA precipitates silver metal particles at the chip surfaces, which block light irradiated from above. The resulting drop in output voltage depends on the amount of target DNA present in the sample solution, which allows the specific detection and the quantitative analysis of the complementary target DNA. The PDA chip showed high relative signal ratios of HPV probe DNA hybridized with complementary target DNA, indicating an excellent capability in discriminating HPV subtypes. The detection limit for the HPV target DNA analysis improved from 1.2 nM to 30 pM by changing the silver development time from 5 to 10 min. Moreover, the enhanced silver development promoted by the gold nanoparticles could be applied to a broader range of target DNA concentration by controlling the silver development time.
Active 2D materials for on-chip nanophotonics and quantum optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiue, Ren-Jye; Efetov, Dmitri K.; Grosso, Gabriele

Abstract Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.
Active 2D materials for on-chip nanophotonics and quantum optics

NASA Astrophysics Data System (ADS)

Shiue, Ren-Jye; Efetov, Dmitri K.; Grosso, Gabriele; Peng, Cheng; Fong, Kin Chung; Englund, Dirk

2017-03-01

Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.
Two-dimensional radiant energy array computers and computing devices

NASA Technical Reports Server (NTRS)

Schaefer, D. H.; Strong, J. P., III (Inventor)

1976-01-01

Two dimensional digital computers and computer devices operate in parallel on rectangular arrays of digital radiant energy optical signal elements which are arranged in ordered rows and columns. Logic gate devices receive two input arrays and provide an output array having digital states dependent only on the digital states of the signal elements of the two input arrays at corresponding row and column positions. The logic devices include an array of photoconductors responsive to at least one of the input arrays for either selectively accelerating electrons to a phosphor output surface, applying potentials to an electroluminescent output layer, exciting an array of discrete radiant energy sources, or exciting a liquid crystal to influence crystal transparency or reflectivity.
Self-Assembly High-Performance UV-vis-NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Yibin; Yang, Guowei; Li, Jingbo

2017-12-20

The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In 2 Se 3 /Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 10 12 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In 2 Se 3 film (20.3 nm) and the rational energy band structures of β-In 2 Se 3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.
Future Trends in MIcroelectronics: Up the Nano Creek

DTIC Science & Technology

2006-06-01

developed focal plane arrays (FPA)3𔃾 in addition to emphasizing future development in UV-to-far infrared multicolor FPA detectors 5𔄀 for next generation... detectors ", IEEE J. Quantum Electronics 35, 1685 (1999). 3. P. Bois, E. Costard, X. Marcadet, and E. Herniou, "Development of quantum well infrared ...photodetector array", Infrared Phys. Technol. 44, 369 (2003). 5. M. N. Abedin, T. F. Refaat, J. M. Zawodny, et al., "Multicolor focal plane array detector
USAF Space Sensing Cryogenic Considerations

DTIC Science & Technology

2010-01-01

Background IR emissions and electronic noise that is inherently present in Focal Plane Arrays (FPAs) and surveillance optics bench designs prevents their use... noise that is inherently present in Focal Plane Arrays (FPAs) and surveillance optics bench designs prevents their use unless they are cooled to...experimental or not of sufficient sensitivity for the before mentioned missions [2]. Examples include Quantum Well IR Photodetectors ( QWIP ), nanotubes
Separating light absorption layer from channel in ZnO vertical nanorod arrays based photodetectors for high-performance image sensors

NASA Astrophysics Data System (ADS)

Ma, Yang; Wu, Congjun; Xu, Zhihao; Wang, Fei; Wang, Min

2018-05-01

Photoconductor arrays with both high responsivity and large ON/OFF ratios are of great importance for the application of image sensors. Herein, a ZnO vertical nanorod array based photoconductor with a light absorption layer separated from the device channel has been designed, in which the photo-generated carriers along the axial ZnO nanorods drive to the external electrodes through nanorod-nanorod junctions in the dense layer at the bottom. This design allows us to enhance the photocurrent with unchanged dark current by increasing the ratio between the ZnO nanorod length and the thickness of the dense layer to achieve both high responsivity and large ON/OFF ratios. As a result, the as-fabricated devices possess a high responsivity of 1.3 × 105 A/W, a high ON/OFF ratio of 790, a high detectivity of 1.3 × 1013 Jones, and a low detectable light intensity of 1 μW/cm2. More importantly, the developed approach enables the integration of ZnO vertical nanorod array based photodetectors as image sensors with uniform device-to-device performance.
Patch antenna terahertz photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palaferri, D.; Todorov, Y., E-mail: yanko.todorov@univ-paris-diderot.fr; Chen, Y. N.

2015-04-20

We report on the implementation of 5 THz quantum well photodetector exploiting a patch antenna cavity array. The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45° polished facet mesa. Our results demonstrate a clear improvement in responsivity, polarization insensitivity, and background limited performance. Peak detectivities in excess of 5 × 10{sup 12} cmHz{sup 1/2}/W have been obtained, a value comparable with that of the best cryogenic cooled bolometers.
Long-Wavelength 640 x 486 GaAs/AlGaAs Quantum Well Infrared Photodetector Snap-Shot Camera

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Liu, John K.; Hong, Winn; Sundaram, Mani; Maker, Paul D.; Muller, Richard E.; Shott, Craig A.; Carralejo, Ronald

1998-01-01

A 9-micrometer cutoff 640 x 486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NE.deltaT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature.
Spatial mapping and statistical reproducibility of an array of 256 one-dimensional quantum wires

NASA Astrophysics Data System (ADS)

Al-Taie, H.; Smith, L. W.; Lesage, A. A. J.; See, P.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

2015-08-01

We utilize a multiplexing architecture to measure the conductance properties of an array of 256 split gates. We investigate the reproducibility of the pinch off and one-dimensional definition voltage as a function of spatial location on two different cooldowns, and after illuminating the device. The reproducibility of both these properties on the two cooldowns is high, the result of the density of the two-dimensional electron gas returning to a similar state after thermal cycling. The spatial variation of the pinch-off voltage reduces after illumination; however, the variation of the one-dimensional definition voltage increases due to an anomalous feature in the center of the array. A technique which quantifies the homogeneity of split-gate properties across the array is developed which captures the experimentally observed trends. In addition, the one-dimensional definition voltage is used to probe the density of the wafer at each split gate in the array on a micron scale using a capacitive model.
High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

PubMed Central

Dhyani, Veerendra; Das, Samaresh

2017-01-01

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652
Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

PubMed

Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

2015-11-25

Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications.
Radiation-Hardened Wafer Scale Integration

DTIC Science & Technology

1989-10-25

unlimited. LEXINGTON MASSACHUSETTS EXECUTIVE SUMMARY A focal plane processor (FPP) for a large array of LWIR photodetectors on a space platform must...It seems certain that large. scanning LWIR arrays will once again be of interest in the future, though their specifications will differ from those... nonuniformity and defects in the ZMR material, but films of good quality produced by this technique are now available commercially from Kopin Corporation. Such
Optical sensors and multisensor arrays containing thin film electroluminescent devices

DOEpatents

Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

2001-12-18

Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.
Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.
Ultra-high aggregate bandwidth two-dimensional multiple-wavelength diode laser arrays

NASA Astrophysics Data System (ADS)

Chang-Hasnain, Connie

1994-04-01

Two-dimensional (2D) multi-wavelength vertical cavity surface emitting laser (VCSEL) arrays is promising for ultrahigh aggregate capacity optical networks. A 2D VCSEL array emitting 140 distinct wavelengths was reported by implementing a spatially graded layer in the VCSEL structure, which in turn creates a wavelength spread. In this program, we concentrated on novel epitaxial growth techniques to make reproducible and repeatable multi-wavelength VCSEL arrays.
A filter spectrometer concept for facsimile cameras

NASA Technical Reports Server (NTRS)

Jobson, D. J.; Kelly, W. L., IV; Wall, S. D.

1974-01-01

A concept which utilizes interference filters and photodetector arrays to integrate spectrometry with the basic imagery function of a facsimile camera is described and analyzed. The analysis considers spectral resolution, instantaneous field of view, spectral range, and signal-to-noise ratio. Specific performance predictions for the Martian environment, the Viking facsimile camera design parameters, and a signal-to-noise ratio for each spectral band equal to or greater than 256 indicate the feasibility of obtaining a spectral resolution of 0.01 micrometers with an instantaneous field of view of about 0.1 deg in the 0.425 micrometers to 1.025 micrometers range using silicon photodetectors. A spectral resolution of 0.05 micrometers with an instantaneous field of view of about 0.6 deg in the 1.0 to 2.7 micrometers range using lead sulfide photodetectors is also feasible.
Molecular ping-pong Game of Life on a two-dimensional DNA origami array.

PubMed

Jonoska, N; Seeman, N C

2015-07-28

We propose a design for programmed molecular interactions that continuously change molecular arrangements in a predesigned manner. We introduce a model where environmental control through laser illumination allows platform attachment/detachment oscillations between two floating molecular species. The platform is a two-dimensional DNA origami array of tiles decorated with strands that provide both, the floating molecular tiles to attach and to pass communicating signals to neighbouring array tiles. In particular, we show how algorithmic molecular interactions can control cyclic molecular arrangements by exhibiting a system that can simulate the dynamics similar to two-dimensional cellular automata on a DNA origami array platform. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Micromachined microfluidic chemiluminescent system for explosives detection

NASA Astrophysics Data System (ADS)

Park, Yoon; Neikirk, Dean P.; Anslyn, Eric V.

2007-04-01

Results will be reported from efforts to develop a self-contained micromachined microfluidic detection system for the presence of specific target analytes under the US Office of Naval Research Counter IED Basic Research Program. Our efforts include improving/optimizing a dedicated micromachined sensor array with integrated photodetectors and the synthesis of chemiluminescent receptors for nitramine residues. Our strategy for developing chemiluminescent synthetic receptors is to use quenched peroxyoxalate chemiluminescence; the presence of the target analyte would then trigger chemiluminescence. Preliminary results are encouraging as we have been able to measure large photo-currents from the reaction. We have also fabricated and demonstrated the feasibility of integrating photodiodes within an array of micromachined silicon pyramidal cavities. One particular advantage of such approach over a conventional planar photodiode would be its collection efficiency without the use of external optical components. Unlike the case of a normal photodetector coupled to a focused or collimated light source, the photodetector for such a purpose must couple to an emitting source that is approximately hemispherical; hence, using the full sidewalls of the bead's confining cavity as the detector allows the entire structure to act as its own integrating sphere. At the present time, our efforts are concentrating on improving the signal-to-noise ratio by reducing the leakage current by optimizing the fabrication sequence and the design.
Single Pixel Black Phosphorus Photodetector for Near-Infrared Imaging.

PubMed

Miao, Jinshui; Song, Bo; Xu, Zhihao; Cai, Le; Zhang, Suoming; Dong, Lixin; Wang, Chuan

2018-01-01

Infrared imaging systems have wide range of military or civil applications and 2D nanomaterials have recently emerged as potential sensing materials that may outperform conventional ones such as HgCdTe, InGaAs, and InSb. As an example, 2D black phosphorus (BP) thin film has a thickness-dependent direct bandgap with low shot noise and noncryogenic operation for visible to mid-infrared photodetection. In this paper, the use of a single-pixel photodetector made with few-layer BP thin film for near-infrared imaging applications is demonstrated. The imaging is achieved by combining the photodetector with a digital micromirror device to encode and subsequently reconstruct the image based on compressive sensing algorithm. Stationary images of a near-infrared laser spot (λ = 830 nm) with up to 64 × 64 pixels are captured using this single-pixel BP camera with 2000 times of measurements, which is only half of the total number of pixels. The imaging platform demonstrated in this work circumvents the grand challenges of scalable BP material growth for photodetector array fabrication and shows the efficacy of utilizing the outstanding performance of BP photodetector for future high-speed infrared camera applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739
Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea

2015-12-28

A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observedmore » threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.« less
Extending Hyperspectral Capabilities with Dualband Infrared Focal Plane Arrays

DTIC Science & Technology

2007-01-01

plane array. The next challenge to implementing a dualband IR CTIS system is overcoming the signal to noise ratio. The signal through the CTIS...communication), enabling the 720x720 CTIS goals described above. More recently, a 1024x1024, dualband quantum well infrared photodetector ( QWIP ...62950D (2006). 9. S. D. Gunapala, et al., “Towards Dualband Megapixel QWIP Focal Plane Arrays”, Proceedings of International Workshop on Quantum Well
A Direct Mechanism of Ultrafast Intramolecular Singlet Fission in Pentacene Dimers

DTIC Science & Technology

2016-08-24

property for materials used in third- generation solar cells and photodetectors, among other optoelectronic devices.1−3 Unfortunately, techno- logical...detailed mechanism of iSF and to establish its relationship to chemical structure. Current literature on the mechanism of xSF is in general agreement...not been identified. We use this ring-breathing mode to generate a two- dimensional potential energy surface (PES) for the excited states along the
Non-Hermitian engineering of single mode two dimensional laser arrays

PubMed Central

Teimourpour, Mohammad H.; Ge, Li; Christodoulides, Demetrios N.; El-Ganainy, Ramy

2016-01-01

A new scheme for building two dimensional laser arrays that operate in the single supermode regime is proposed. This is done by introducing an optical coupling between the laser array and lossy pseudo-isospectral chains of photonic resonators. The spectrum of this discrete reservoir is tailored to suppress all the supermodes of the main array except the fundamental one. This spectral engineering is facilitated by employing the Householder transformation in conjunction with discrete supersymmetry. The proposed scheme is general and can in principle be used in different platforms such as VCSEL arrays and photonic crystal laser arrays. PMID:27698355
Design and fabrication of engineering model fiber-optics detector

NASA Technical Reports Server (NTRS)

Mcsweeney, A.

1972-01-01

The design and fabrication of an annular ring detector consisting of optical fibers terminated with photodetectors is described. The maximum width of each concentric ring has to be small enough to permit the resolution of a Ronchi ruling transform with a dot spacing of 150 microns. A minimum of 100 concentric rings covering a circular area of 2.54 cm diameter also is necessary. A fiber-optic array consisting of approximately 89,000 fibers of 76 microns diameter was fabricated to meet the above requirements. The fibers within a circular area of 2.5 cm diameter were sorted into 168 adjacent rings concentric with the center fiber. The response characteristics of several photodetectors were measured, and the data used to compare their linearity of response and dynamic range. Also, coupling loss measurements were made for three different methods of terminating the optical fibers with a photodetector.
Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

NASA Astrophysics Data System (ADS)

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

2018-06-01

We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.
Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

DTIC Science & Technology

2013-01-01

013110 (2013) Demonstration of high performance bias-selectable dual- band short-/mid-wavelength infrared photodetectors based on type-II InAs/ GaSb ...been used for the growth of QD structures . These include the formation of self-assembled QD, for example, Stranski-Krastanov (SK) growth mode,8,9 atomic...confinement in SML-QD and the reduction in the amount of InAs used per layer of QD can help stack more layers in a 3-dimensional QD structure . Several
Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets.

PubMed

Wang, Qisheng; Safdar, Muhammad; Xu, Kai; Mirza, Misbah; Wang, Zhenxing; He, Jun

2014-07-22

Van der Waals epitaxy (vdWE) is of great interest due to its extensive applications in the synthesis of ultrathin two-dimensional (2D) layered materials. However, vdWE of nonlayered functional materials is still not very well documented. Here, although tellurium has a strong tendency to grow into one-dimensional nanoarchitecture due to its chain-like structure, we successfully realize 2D hexagonal tellurium nanoplates on flexible mica sheets via vdWE. Chemically inert mica surface is found to be crucial for the lateral growth of hexagonal tellurium nanoplates since it (1) facilitates the migration of tellurium adatoms along mica surface and (2) allows a large lattice mismatch. Furthermore, 2D tellurium hexagonal nanoplates-based photodetectors are in situ fabricated on flexible mica sheets. Efficient photoresponse is obtained even after bending the device for 100 times, indicating 2D tellurium hexagonal nanoplates-based photodetectors on mica sheets have a great application potential in flexible and wearable optoelectronic devices. We believe the fundamental understanding of vdWE effect on the growth of 2D tellurium hexagonal nanoplate can pave the way toward leveraging vdWE as a useful channel to realize the 2D geometry of other nonlayered materials.
GFZ Wireless Seismic Array (GFZ-WISE), a Wireless Mesh Network of Seismic Sensors: New Perspectives for Seismic Noise Array Investigations and Site Monitoring

PubMed Central

Picozzi, Matteo; Milkereit, Claus; Parolai, Stefano; Jaeckel, Karl-Heinz; Veit, Ingo; Fischer, Joachim; Zschau, Jochen

2010-01-01

Over the last few years, the analysis of seismic noise recorded by two dimensional arrays has been confirmed to be capable of deriving the subsoil shear-wave velocity structure down to several hundred meters depth. In fact, using just a few minutes of seismic noise recordings and combining this with the well known horizontal-to-vertical method, it has also been shown that it is possible to investigate the average one dimensional velocity structure below an array of stations in urban areas with a sufficient resolution to depths that would be prohibitive with active source array surveys, while in addition reducing the number of boreholes required to be drilled for site-effect analysis. However, the high cost of standard seismological instrumentation limits the number of sensors generally available for two-dimensional array measurements (i.e., of the order of 10), limiting the resolution in the estimated shear-wave velocity profiles. Therefore, new themes in site-effect estimation research by two-dimensional arrays involve the development and application of low-cost instrumentation, which potentially allows the performance of dense-array measurements, and the development of dedicated signal-analysis procedures for rapid and robust estimation of shear-wave velocity profiles. In this work, we present novel low-cost wireless instrumentation for dense two-dimensional ambient seismic noise array measurements that allows the real–time analysis of the surface-wavefield and the rapid estimation of the local shear-wave velocity structure for site response studies. We first introduce the general philosophy of the new system, as well as the hardware and software that forms the novel instrument, which we have tested in laboratory and field studies. PMID:22319298
Two-Dimensional Array Beam Scanning Via Externally and Mutually Injection Locked Coupled Oscillators

NASA Technical Reports Server (NTRS)

Pogorzelski, Ronald J.

2000-01-01

Some years ago, Stephan proposed an approach to one dimensional (linear) phased array beam steering which requires only a single phase shifter. This involves the use of a linear array of voltage-controlled electronic oscillators coupled to nearest neighbors. The oscillators are mutually injection locked by controlling their coupling and tuning appropriately. Stephan's approach consists of deriving two signals from a master oscillator, one signal phase shifted with respect to the other by means of a single phase shifter. These two signals are injected into the end oscillators of the array. The result is a linear phase progression across the oscillator array. Thus, if radiating elements are connected to each oscillator and spaced uniformly along a line, they will radiate a beam at an angle to that line determined by the phase gradient which is, in turn, determined by the phase difference between the injection signals.The beam direction is therefore controlled by adjusting this phase difference. Recently, Pogorzelski and York presented a formulation which facilitates theoretical analysis of the above beam steering technique. This was subsequently applied by Pogorzelski in analysis of two dimensional beam steering using perimeter detuning of a coupled oscillator array. The formulation is based on a continuum model in which the oscillator phases are represented by a continuous function satisfying a partial differential equation of diffusion type. This equation can be solved via the Laplace transform and the resulting solution exhibits the dynamic behavior of the array as the beam is steered. Stephan's beam steering technique can be similarly generalized to two-dimensional arrays in which the beam control signals are applied to the oscillators on the perimeter of the array. In this paper the continuum model for this two-dimensional case is developed and the dynamic solution for the corresponding aperture phase function is obtained. The corresponding behavior of the resulting far-zone radiation pattern is displayed as well.
Depth-enhanced three-dimensional-two-dimensional convertible display based on modified integral imaging.

PubMed

Park, Jae-Hyeung; Kim, Hak-Rin; Kim, Yunhee; Kim, Joohwan; Hong, Jisoo; Lee, Sin-Doo; Lee, Byoungho

2004-12-01

A depth-enhanced three-dimensional-two-dimensional convertible display that uses a polymer-dispersed liquid crystal based on the principle of integral imaging is proposed. In the proposed method, a lens array is located behind a transmission-type display panel to form an array of point-light sources, and a polymer-dispersed liquid crystal is electrically controlled to pass or to scatter light coming from these point-light sources. Therefore, three-dimensional-two-dimensional conversion is accomplished electrically without any mechanical movement. Moreover, the nonimaging structure of the proposed method increases the expressible depth range considerably. We explain the method of operation and present experimental results.
Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

PubMed Central

Jung, Chulseung; Kim, Seung Min; Moon, Hyunseong; Han, Gyuchull; Kwon, Junyeon; Hong, Young Ki; Omkaram, Inturu; Yoon, Youngki; Kim, Sunkook; Park, Jozeph

2015-01-01

Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications. PMID:26477744
Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

NASA Astrophysics Data System (ADS)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.
Engineering the Charge Transfer in all 2D Graphene-Nanoplatelets Heterostructure Photodetectors

PubMed Central

Robin, A.; Lhuillier, E.; Xu, X. Z.; Ithurria, S.; Aubin, H.; Ouerghi, A.; Dubertret, B.

2016-01-01

Two dimensional layered (i.e. van der Waals) heterostructures open up great prospects, especially in photodetector applications. In this context, the control of the charge transfer between the constituting layers is of crucial importance. Compared to bulk or 0D system, 2D materials are characterized by a large exciton binding energy (0.1–1 eV) which considerably affects the magnitude of the charge transfer. Here we investigate a model system made from colloidal 2D CdSe nanoplatelets and epitaxial graphene in a phototransistor configuration. We demonstrate that using a heterostructured layered material, we can tune the magnitude and the direction (i.e. electron or hole) of the charge transfer. We further evidence that graphene functionalization by nanocrystals only leads to a limited change in the magnitude of the 1/f noise. These results draw some new directions to design van der Waals heterostructures with enhanced optoelectronic properties. PMID:27143413
High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

PubMed

Chang, Ren-Jie; Tan, Haijie; Wang, Xiaochen; Porter, Benjamin; Chen, Tongxin; Sheng, Yuewen; Zhou, Yingqiu; Huang, Hefu; Bhaskaran, Harish; Warner, Jamie H

2018-04-18

Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS 2 :Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS 2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS 2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS 2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS 2 and WS 2 .
System and method for optical monitoring of a combustion flame

DOEpatents

Brown, Dale M; Sandvik, Peter M; Fedison, Jeffrey B; Matocha, Kevin S; Johnson, Thomas E

2006-09-26

An optical spectrometer for combustion flame temperature determination includes at least two photodetectors positioned for receiving light from a combustion flame, each of the at least two photodetectors having a different, overlapping bandwidth for detecting a respective output signal in an ultraviolet emission band; and a computer for subtracting a respective output signal of a first one of the at least two photodetectors from a respective output signal of a second one of the at least two photodetectors to obtain a segment signal, and using the segment signal to determine the combustion flame temperature.
Advances on Sensitive Electron-injection based Cameras for Low-Flux, Short-Wave-Infrared Applications

NASA Astrophysics Data System (ADS)

Fathipour, Vala; Bonakdar, Alireza; Mohseni, Hooman

2016-08-01

Short-wave infrared (SWIR) photon detection has become an essential technology in the modern world. Sensitive SWIR detector arrays with high pixel density, low noise levels and high signal-to-noise-ratios are highly desirable for a variety of applications including biophotonics, light detection and ranging, optical tomography, and astronomical imaging. As such many efforts in infrared detector research are directed towards improving the performance of the photon detectors operating in this wavelength range. We review the history, principle of operation, present status and possible future developments of a sensitive SWIR detector technology, which has demonstrated to be one of the most promising paths to high pixel density focal plane arrays for low flux applications. The so-called electron-injection (EI) detector was demonstrated for the first time (in 2007). It offers an overall system-level sensitivity enhancement compared to the p-i-n diode due to a stable internal avalanche-free gain. The amplification method is inherently low noise, and devices exhibit an excess noise of unity. The detector operates in linear-mode and requires only bias voltage of a few volts. The stable detector characteristics, makes formation of high yield large-format, and high pixel density focal plane arrays less challenging compared to other detector technologies such as avalanche photodetectors. Detector is based on the mature InP material system (InP/InAlAs/GaAsSb/InGaAs), and has a cutoff wavelength of 1700 nm. It takes advantage of a unique three-dimensional geometry and combines the efficiency of a large absorbing volume with the sensitivity of a low-dimensional switch (injector) to sense and amplify signals. Current devices provide high-speed response ~ 5 ns rise time, and low jitter ~ 12 ps at room temperature. The internal dark current density is ~ 1 μA/cm2 at room temperature decreasing to 0.1 nA/cm2 at 160 K. EI detectors have been designed, fabricated, and tested during two generations of development and optimization cycles. We review our imager results using the first-generation detectors. In the second-generation devices, the dark current is reduced by two orders of magnitude, and bandwidth is improved by 4 orders of magnitude. The dark current density of the EI detector is shown to outperform the state-of-the-art technology, the

GeSn Based Near and Mid Infrared Heterostructure Detectors

DTIC Science & Technology

2018-02-07

prestigious journals. 15. SUBJECT TERMS Plasmonic Enhancement, Metal Nanostructures, CMOS, Photodetectors, Germanium- Tin Diode, IR Focal Plane Array...can be achieved by using current developed chemical vapor deposition technique. Optical properties of germanium tin (Ge1-xSnx) alloys have been
Scalable loading of a two-dimensional trapped-ion array

PubMed Central

Bruzewicz, Colin D.; McConnell, Robert; Chiaverini, John; Sage, Jeremy M.

2016-01-01

Two-dimensional arrays of trapped-ion qubits are attractive platforms for scalable quantum information processing. Sufficiently rapid reloading capable of sustaining a large array, however, remains a significant challenge. Here with the use of a continuous flux of pre-cooled neutral atoms from a remotely located source, we achieve fast loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive two-dimensional arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux. PMID:27677357
Two-dimensional CsPbBr3/PCBM heterojunctions for sensitive, fast and flexible photodetectors boosted by charge transfer

NASA Astrophysics Data System (ADS)

Shen, Yalong; Yu, Dejian; Wang, Xiong; Huo, Chengxue; Wu, Ye; Zhu, Zhengfeng; Zeng, Haibo

2018-02-01

Inorganic halide perovskites exhibited promising potentials for high-performance wide-band photodetectors (PDs) due to their high light absorption coefficients, long carrier diffusion length and wide light absorption ranges. Here, we report two-dimensional (2D) CsPbBr3/PCBM heterojunctions for sensitive, fast and flexible PDs, whose performances can be greatly boosted by the charge transfer through the energy-aligned interface. The 2D CsPbBr3 nanosheets with high crystallinity were fabricated via a simple solution-process at room temperature, and then assembled into flexible heterojunctions films with polymerphenyl-C61-butyric acid methyl ester (PCBM). Significantly, the efficient and fast charge transfer at the heterojunctions interface was evidenced by the obvious photoluminescence quenching and variation of recombination dynamics. Subsequently, such heterojunctions PD exhibited an enhanced responsivity of 10.85 A W-1 and an ultrahigh detectivity of 3.06 × 1013 Jones. In addition, the PD shows a broad linear dynamic range of 73 dB, a fast response speed with rise time of 44 μs and decay time of 390 μs, respectively. Moreover, the PD lying on polyethylene terephthalate substrates exhibited an outstanding mechanical flexibility and a robust electrical stability. These results could provide a new avenue for integration of 2D perovskites and organic functional materials and for high-performance flexible PDs.
Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.
High resolution CsI(Tl)/Si-PIN detector development for breast imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.; Tull, C.R.

High resolution multi-element (8x8) imaging arrays with collimators, size matched to discrete CsI(Tl) scintillator arrays and Si-PIN photodetector arrays (PDA`s) were developed as prototypes for larger arrays for breast imaging. Photodetector pixels were each 1.5 {times} 1.5 mm{sup 2} with 0.25 mm gaps. A 16-element quadrant of the detector was evaluated with a segmented CsI(Tl) scintillator array coupled to the silicon array. The scintillator thickness of 6 mm corresponds to >85% total gamma efficiency at 140 keV. Pixel energy resolution of <8% FWHM was obtained for Tc-99m. Electronic noise was 41 e{sup {minus}} RMS corresponding to a 3% FWHM contributionmore » to the 140 keV photopeak. Detection efficiency uniformity measured with a Tc-99m flood source was 4.3% for an {approximately}10% energy photopeak window. Spatial resolution was 1.53 mm FWHM and pitch was 1.75 mm as measured from the Co-57 (122 keV) line spread function. Signal to background was 34 and contrast was 0.94. The energy resolution and spatial characteristics of the new imaging detector exceed those of other scintillator based imaging detectors. A camera based on this technology will allow: (1) Improved Compton scatter rejection; (2) Detector positioning in close proximity to the breast to increase signal to noise; (3) Improved spatial resolution; and (4) Improved efficiency compared to high resolution collimated gamma cameras for the anticipated compressed breast geometries.« less
Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1985-01-01

Two novel types of superlattice photodetectors were studied. The first was a superlattice photomultiplier and the second a photodetector based on the real space transfer mechanism. A summary of the results is presented.
Self-referenced locking of optical coherence by single-detector electronic-frequency tagging

NASA Astrophysics Data System (ADS)

Shay, T. M.; Benham, Vincent; Spring, Justin; Ward, Benjamin; Ghebremichael, F.; Culpepper, Mark A.; Sanchez, Anthony D.; Baker, J. T.; Pilkington, D.; Berdine, Richard

2006-02-01

We report a novel coherent beam combining technique. This is the first actively phase locked optical fiber array that eliminates the need for a separate reference beam. In addition, only a single photodetector is required. The far-field central spot of the array is imaged onto the photodetector to produce the phase control loop signals. Each leg of the fiber array is phase modulated with a separate RF frequency, thus tagging the optical phase shift for each leg by a separate RF frequency. The optical phase errors for the individual array legs are separated in the electronic domain. In contrast with the previous active phase locking techniques, in our system the reference beam is spatially overlapped with all the RF modulated fiber leg beams onto a single detector. The phase shift between the optical wave in the reference leg and in the RF modulated legs is measured separately in the electronic domain and the phase error signal is feedback to the LiNbO 3 phase modulator for that leg to minimize the phase error for that leg relative to the reference leg. The advantages of this technique are 1) the elimination of the reference beam and beam combination optics and 2) the electronic separation of the phase error signals without any degradation of the phase locking accuracy. We will present the first theoretical model for self-referenced LOCSET and describe experimental results for a 3 x 3 array.
Discrete elliptic solitons in two-dimensional waveguide arrays

NASA Astrophysics Data System (ADS)

Ye, Fangwei; Dong, Liangwei; Wang, Jiandong; Cai, Tian; Li, Yong-Ping

2005-04-01

The fundamental properties of discrete elliptic solitons (DESs) in the two-dimensional waveguide arrays were studied. The DESs show nontrivial spatial structures in their parameters space due to the introduction of the new freedom of ellipticity, and their stability is closely linked to their propagation directions in the transverse plane.
Polymer:Fullerene Bimolecular Crystals for Near-Infrared Spectroscopic Photodetectors.

PubMed

Tang, Zheng; Ma, Zaifei; Sánchez-Díaz, Antonio; Ullbrich, Sascha; Liu, Yuan; Siegmund, Bernhard; Mischok, Andreas; Leo, Karl; Campoy-Quiles, Mariano; Li, Weiwei; Vandewal, Koen

2017-09-01

Spectroscopic photodetection is a powerful tool in disciplines such as medical diagnosis, industrial process monitoring, or agriculture. However, its application in novel fields, including wearable and biointegrated electronics, is hampered by the use of bulky dispersive optics. Here, solution-processed organic donor-acceptor blends are employed in a resonant optical cavity device architecture for wavelength-tunable photodetection. While conventional photodetectors respond to above-gap excitation, the cavity device exploits weak subgap absorption of intermolecular charge-transfer states of the intercalating poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bimolecular crystal. This enables a highly wavelength selective, near-infrared photoresponse with a spectral resolution down to 14 nm, as well as dark currents and detectivities comparable with commercial inorganic photodetectors. Based on this concept, a miniaturized spectrophotometer, comprising an array of narrowband cavity photodetectors, is fabricated by using a blade-coated PBTTT:PCBM thin film with a thickness gradient. As an application example, a measurement of the transmittance spectrum of water by this device is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Correlation of Spatially Filtered Dynamic Speckles in Distance Measurement Application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Semenov, Dmitry V.; Nippolainen, Ervin; Kamshilin, Alexei A.

2008-04-15

In this paper statistical properties of spatially filtered dynamic speckles are considered. This phenomenon was not sufficiently studied yet while spatial filtering is an important instrument for speckles velocity measurements. In case of spatial filtering speckle velocity information is derived from the modulation frequency of filtered light power which is measured by photodetector. Typical photodetector output is represented by a narrow-band random noise signal which includes non-informative intervals. Therefore more or less precious frequency measurement requires averaging. In its turn averaging implies uncorrelated samples. However, conducting research we found that correlation is typical property not only of dynamic speckle patternsmore » but also of spatially filtered speckles. Using spatial filtering the correlation is observed as a response of measurements provided to the same part of the object surface or in case of simultaneously using several adjacent photodetectors. Found correlations can not be explained using just properties of unfiltered dynamic speckles. As we demonstrate the subject of this paper is important not only from pure theoretical point but also from the point of applied speckle metrology. E.g. using single spatial filter and an array of photodetector can greatly improve accuracy of speckle velocity measurements.« less
Periodically structured Si pillars for high-performing heterojunction photodetectors

NASA Astrophysics Data System (ADS)

Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

2015-03-01

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.
Dimensional-Hybrid Structures of 2D Materials with ZnO Nanostructures via pH-Mediated Hydrothermal Growth for Flexible UV Photodetectors.

PubMed

Lee, Young Bum; Kim, Seong Ku; Lim, Yi Rang; Jeon, In Su; Song, Wooseok; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

2017-05-03

Complementary combination of heterostructures is a crucial factor for the development of 2D materials-based optoelectronic devices. Herein, an appropriate solution for fabricating complementary dimensional-hybrid nanostructures comprising structurally tailored ZnO nanostructures and 2D materials such as graphene and MoS 2 is suggested. Structural features of ZnO nanostructures hydrothermally grown on graphene and MoS 2 are deliberately manipulated by adjusting the pH value of the growing solution, which will result in the formation of ZnO nanowires, nanostars, and nanoflowers. The detailed growth mechanism is further explored for the structurally tailored ZnO nanostructures on the 2D materials. Furthermore, a UV photodetector based on the dimensional-hybrid nanostructures is fabricated, which demonstrates their excellent photocurrent and mechanical durability. This can be understood by the existence of oxygen vacancies and oxygen-vacancies-induced band narrowing in the ZnO nanostructures, which is a decisive factor for determining their photoelectrical properties in the hybrid system.
Parallel Information Processing (Image Transmission Via Fiber Bundle and Multimode Fiber

NASA Technical Reports Server (NTRS)

Kukhtarev, Nicholai

2003-01-01

Growing demand for visual, user-friendly representation of information inspires search for the new methods of image transmission. Currently used in-series (sequential) methods of information processing are inherently slow and are designed mainly for transmission of one or two dimensional arrays of data. Conventional transmission of data by fibers requires many fibers with array of laser diodes and photodetectors. In practice, fiber bundles are also used for transmission of images. Image is formed on the fiber-optic bundle entrance surface and each fiber transmits the incident image to the exit surface. Since the fibers do not preserve phase, only 2D intensity distribution can be transmitted in this way. Each single mode fiber transmit only one pixel of an image. Multimode fibers may be also used, so that each mode represent different pixel element. Direct transmission of image through multimode fiber is hindered by the mode scrambling and phase randomization. To overcome these obstacles wavelength and time-division multiplexing have been used, with each pixel transmitted on a separate wavelength or time interval. Phase-conjugate techniques also was tested in, but only in the unpractical scheme when reconstructed image return back to the fiber input end. Another method of three-dimensional imaging over single mode fibers was demonstrated in, using laser light of reduced spatial coherence. Coherence encoding, needed for a transmission of images by this methods, was realized with grating interferometer or with the help of an acousto-optic deflector. We suggest simple practical holographic method of image transmission over single multimode fiber or over fiber bundle with coherent light using filtering by holographic optical elements. Originally this method was successfully tested for the single multimode fiber. In this research we have modified holographic method for transmission of laser illuminated images over commercially available fiber bundle (fiber endoscope, or fiberscope).
High frequency GaAlAs modulator and photodetector for phased array antenna applications

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Chorey, C. M.; Hill, S. M.; Bhasin, K. B.

1988-01-01

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.
The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M; Choi, K.; Reuter, D.; Sundaram, M.; Jhabvala, C; La, Anh; Waczynski, Augustyn; Bundas, Jason

2010-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8[mu]m and 12.0[mu]m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.
The HERSCHEL/PACS early Data Products

NASA Astrophysics Data System (ADS)

Wieprecht, E.; Wetzstein, M.; Huygen, R.; Vandenbussche, B.; De Meester, W.

2006-07-01

ESA's Herschel Space Observatory to be launched in 2007, is the first space observatory covering the full far-infrared and submillimeter wavelength range (60 - 670 microns). The Photodetector Array Camera & Spectrometer (PACS) is one of the three science instruments. It contains two Ge:Ga photoconductor arrays and two bolometer arrays to perform imaging line spectroscopy and imaging photometry in the 60 - 210 micron wavelength band. The HERSCHEL ground segment (Herschel Common Science System - HCSS) is implemented using JAVA technology and written in a common effort by the HERSCHEL Science Center and the three instrument teams. The PACS Common Software System (PCSS) is based on the HCSS and used for the online and offline analysis of PACS data. For telemetry bandwidth reasons PACS science data are partially processed on board, compressed, cut into telemetry packets and transmitted to the ground. These steps are instrument mode dependent. We will present the software model which allows to reverse the discrete on board processing steps and evaluate the data. After decompression and reconstruction the detector data and instrument status information are organized in two main PACS Products. The design of these JAVA classes considers the individual sampling rates, data formats, memory and performance optimization aspects and comfortable user interfaces.
The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Reuter, D.; Choi, K.; Sundaram, M.; Jhabvala, C.; La, A.; Waczynski, A.; Bundas, J.

2011-01-01

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8 m and 12.0 m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.
Particle-Image Velocimeter Having Large Depth of Field

NASA Technical Reports Server (NTRS)

Bos, Brent

2009-01-01

An instrument that functions mainly as a particle-image velocimeter provides data on the sizes and velocities of flying opaque particles. The instrument is being developed as a means of characterizing fluxes of wind-borne dust particles in the Martian atmosphere. The instrument could also adapted to terrestrial use in measuring sizes and velocities of opaque particles carried by natural winds and industrial gases. Examples of potential terrestrial applications include monitoring of airborne industrial pollutants and airborne particles in mine shafts. The design of this instrument reflects an observation, made in field research, that airborne dust particles derived from soil and rock are opaque enough to be observable by use of bright field illumination with high contrast for highly accurate measurements of sizes and shapes. The instrument includes a source of collimated light coupled to an afocal beam expander and an imaging array of photodetectors. When dust particles travel through the collimated beam, they cast shadows. The shadows are magnified by the beam expander and relayed to the array of photodetectors. Inasmuch as the images captured by the array are of dust-particle shadows rather of the particles themselves, the depth of field of the instrument can be large: the instrument has a depth of field of about 11 mm, which is larger than the depths of field of prior particle-image velocimeters. The instrument can resolve, and measure the sizes and velocities of, particles having sizes in the approximate range of 1 to 300 m. For slowly moving particles, data from two image frames are used to calculate velocities. For rapidly moving particles, image smear lengths from a single frame are used in conjunction with particle- size measurement data to determine velocities.
High speed holographic digital recorder.

PubMed

Roberts, H N; Watkins, J W; Johnson, R H

1974-04-01

Concepts, feasibility experiments, and key component developments are described for a holographic digital record/reproduce system with the potential for 1.0 Gbit/sec rates and higher. Record rates of 500 Mbits/sec have been demonstrated with a ten-channel acoustooptic modulator array and a mode-locked, cavity-dumped argon-ion laser. Acoustooptic device technology has been advanced notably during the development of mode lockers, cavity dumpers, beam deflectors, and multichannel modulator arrays. The development of high speed multichannel photodetector arrays for the readout subsystem requires special attention. The feasibility of 1.0 Gbits/sec record rates has been demonstrated.
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kopach, V. R.; Klepikova, K. S.; Klochko, N. P., E-mail: klochko-np@mail.ru

We investigate the structure, surface morphology, and optical properties of nanostructured ZnO arrays fabricated by pulsed electrodeposition, Ag nanoparticles precipitated from colloidal solutions, and a ZnO/Ag nanocomposite based on them. The electronic and electrical parameters of the ZnO arrays and ZnO/Ag nanocomposites are analyzed by studying the I–V and C–V characteristics. Optimal modes for fabricating the ZnO/Ag heterostructures with the high stability and sensitivity to ultraviolet radiation as promising materials for use in photodetectors, gas sensors, and photocatalysts are determined.

Multichannel Detection in High-Performance Liquid Chromatography.

ERIC Educational Resources Information Center

Miller, James C.; And Others

1982-01-01

A linear photodiode array is used as the photodetector element in a new ultraviolet-visible detection system for high-performance liquid chromatography (HPLC). Using a computer network, the system processes eight different chromatographic signals simultaneously in real-time and acquires spectra manually/automatically. Applications in fast HPLC…
Study of one- and two-dimensional filtering and deconvolution algorithms for a streaming array computer

NASA Technical Reports Server (NTRS)

Ioup, G. E.

1985-01-01

Appendix 5 of the Study of One- and Two-Dimensional Filtering and Deconvolution Algorithms for a Streaming Array Computer includes a resume of the professional background of the Principal Investigator on the project, lists of this publications and research papers, graduate thesis supervised, and grants received.
Development of plenoptic infrared camera using low dimensional material based photodetectors

NASA Astrophysics Data System (ADS)

Chen, Liangliang

Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and expressed in compressive approach. The following computational algorithms are applied to reconstruct images beyond 2D static information. The super resolution signal processing was then used to enhance and improve the image spatial resolution. The whole camera system brings a deeply detailed content for infrared spectrum sensing.
Enhanced Absorption in 2D Materials Via Fano- Resonant Photonic Crystals

DOE PAGES

Wang, Wenyi; Klotz, Andrey; Yang, Yuanmu; ...

2015-05-01

The use of two-dimensional (2D) materials in optoelectronics has attracted much attention due to their fascinating optical and electrical properties. For instance, graphenebased devices have been employed for applications such as ultrafast and broadband photodetectors and modulators while transition metal dichalcogenide (TMDC) based photodetectors can be used for ultrasensitive photodetection. However, the low optical absorption of 2D materials arising from their atomic thickness limits the maximum attainable external quantum efficiency. For example, in the visible and NIR regimes monolayer MoS 2 and graphene absorb only ~10% and 2.3% of incoming light, respectively. Here, we experimentally demonstrate the use of Fano-resonantmore » photonic crystals to significantly boost absorption in atomically thin materials. Using graphene as a test bed, we demonstrate that absorption in the monolayer thick material can be enhanced to 77% within the telecommunications band, the highest value reported to date. We also show that the absorption in the Fano-resonant structure is non-local, with light propagating up to 16 μm within the structure. This property is particularly beneficial in harvesting light from large areas in field-effect-transistor based graphene photodetectors in which separation of photo-generated carriers only occurs ~0.2 μm adjacent to the graphene/electrode interface.« less
High throughput optical scanner

DOEpatents

Basiji, David A.; van den Engh, Gerrit J.

2001-01-01

A scanning apparatus is provided to obtain automated, rapid and sensitive scanning of substrate fluorescence, optical density or phosphorescence. The scanner uses a constant path length optical train, which enables the combination of a moving beam for high speed scanning with phase-sensitive detection for noise reduction, comprising a light source, a scanning mirror to receive light from the light source and sweep it across a steering mirror, a steering mirror to receive light from the scanning mirror and reflect it to the substrate, whereby it is swept across the substrate along a scan arc, and a photodetector to receive emitted or scattered light from the substrate, wherein the optical path length from the light source to the photodetector is substantially constant throughout the sweep across the substrate. The optical train can further include a waveguide or mirror to collect emitted or scattered light from the substrate and direct it to the photodetector. For phase-sensitive detection the light source is intensity modulated and the detector is connected to phase-sensitive detection electronics. A scanner using a substrate translator is also provided. For two dimensional imaging the substrate is translated in one dimension while the scanning mirror scans the beam in a second dimension. For a high throughput scanner, stacks of substrates are loaded onto a conveyor belt from a tray feeder.
Multilevel photonic modules for millimeter-wave phased-array antennas

NASA Astrophysics Data System (ADS)

Paolella, Arthur C.; Bauerle, Athena; Joshi, Abhay M.; Wright, James G.; Coryell, Louis A.

2000-09-01

Millimeter wave phased array systems have antenna element sizes and spacings similar to MMIC chip dimensions by virtue of the operating wavelength. Designing modules in traditional planar packaing techniques are therefore difficult to implement. An advantageous way to maintain a small module footprint compatible with Ka-Band and high frequency systems is to take advantage of two leading edge technologies, opto- electronic integrated circuits (OEICs) and multilevel packaging technology. Under a Phase II SBIR these technologies are combined to form photonic modules for optically controlled millimeter wave phased array antennas. The proposed module, consisting of an OEIC integrated with a planar antenna array will operate on the 40GHz region. The OEIC consists of an InP based dual-depletion PIN photodetector and distributed amplifier. The multi-level module will be fabricated using an enhanced circuit processing thick film process. Since the modules are batch fabricated using an enhanced circuit processing thick film process. Since the modules are batch fabricated, using standard commercial processes, it has the potential to be low cost while maintaining high performance, impacting both military and commercial communications systems.
Memory device for two-dimensional radiant energy array computers

NASA Technical Reports Server (NTRS)

Schaefer, D. H.; Strong, J. P., III (Inventor)

1977-01-01

A memory device for two dimensional radiant energy array computers was developed, in which the memory device stores digital information in an input array of radiant energy digital signals that are characterized by ordered rows and columns. The memory device contains a radiant energy logic storing device having a pair of input surface locations for receiving a pair of separate radiant energy digital signal arrays and an output surface location adapted to transmit a radiant energy digital signal array. A regenerative feedback device that couples one of the input surface locations to the output surface location in a manner for causing regenerative feedback is also included
High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

PubMed Central

Rivera, Manuel; Velázquez, Rafael; Aldalbahi, Ali; Zhou, Andrew F.; Feng, Peter

2017-01-01

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation. PMID:28256507
Investigation of the quantum efficiency of optical heterodyne detectors

NASA Technical Reports Server (NTRS)

Batchman, T. E.

1984-01-01

The frequency response and quantum efficiency of optical photodetectors for heterodyne receivers is investigated. The measurements utilized two spectral lines from the output of two lasers as input to the photodetectors. These lines are easily measurable in power and frequency and hence serve as known inputs. By measuring the output current of the photodetector the quantum efficiency is determined as a function of frequency separation between the two input signals. An investigation of the theoretical basis and accuracy of this type of measurement relative to similar measurements utilizing risetime is undertaken. A theoretical study of the heterodyne process in photodetectors based on semiconductor physics is included so that higher bandwidth detectors may be designed. All measurements are made on commercially available detectors and manufacturers' specifications for normal photodetector operation are compared to the measured heterodyne characteristics.
Localization and separation of acoustic sources by using a 2.5-dimensional circular microphone array.

PubMed

Bai, Mingsian R; Lai, Chang-Sheng; Wu, Po-Chen

2017-07-01

Circular microphone arrays (CMAs) are sufficient in many immersive audio applications because azimuthal angles of sources are considered more important than the elevation angles in those occasions. However, the fact that CMAs do not resolve the elevation angle well can be a limitation for some applications which involves three-dimensional sound images. This paper proposes a 2.5-dimensional (2.5-D) CMA comprised of a CMA and a vertical logarithmic-spacing linear array (LLA) on the top. In the localization stage, two delay-and-sum beamformers are applied to the CMA and the LLA, respectively. The direction of arrival (DOA) is estimated from the product of two array output signals. In the separation stage, Tikhonov regularization and convex optimization are employed to extract the source amplitudes on the basis of the estimated DOA. The extracted signals from two arrays are further processed by the normalized least-mean-square algorithm with the internal iteration to yield the source signal with improved quality. To validate the 2.5-D CMA experimentally, a three-dimensionally printed circular array comprised of a 24-element CMA and an eight-element LLA is constructed. Objective perceptual evaluation of speech quality test and a subjective listening test are also undertaken.
Simultaneous data communication and position sensing with an impact ionization engineered avalanche photodiode array for free space optical communication

NASA Astrophysics Data System (ADS)

Ferraro, Mike S.; Mahon, Rita; Rabinovich, William S.; Murphy, James L.; Dexter, James L.; Clark, William R.; Waters, William D.; Vaccaro, Kenneth; Krejca, Brian D.

2017-02-01

Photodetectors in free space optical communication systems perform two functions: reception of data communication signals and position sensing for pointing, tracking, and stabilization. Traditionally, the optical receive path in an FSO system is split into separate paths for data detection and position sensing. The need for separate paths is a consequence of conflicting performance criteria between position sensitive detectors (PSD) and data detectors. Combining the functionality of both detector types requires that the combinational sensor not only have the bandwidth to support high data rate communication but the active area and spatial discrimination to accommodate position sensing. In this paper we present a large area, concentric five element impact ionization engineered avalanche photodiode array rated for bandwidths beyond 1GHz with a measured carrier ionization ratio of less than 0.1 at moderate APD gains. The integration of this array as a combinational sensor in an FSO system is discussed along with the development of a pointing and stabilization algorithm.
TiO2 Nanowires/Poly(Methyl Methacrylate) Based Hybrid Photodetector: Improved Light Detection.

PubMed

Saha, S; Mondal, A; Choudhur, B; Goswami, T; Sarkar, M B; Chattopadhyay, K K

2016-03-01

Hybrid photodetector with a maximum external quantum efficiency of ~3.08% in the UV region at 370 nm, was fabricated by spin-coated poly(methyl methacrylate) (PMMA) polymer onto glancing angle deposited (GLAD) vertically aligned TiO2 nanowire (NW) arrays. The TiO2 NWs/PMMA detector shows excellent rectification and constant 1.3 times photo-responsivity in the reverse bias condition from -1 V to -10 V. The photodiode possesses a low ideality factor of 5.1 as compared to bared TiO2 NWs device of 7.1. The hybrid device produces sharp turn-on of -0.8 s and turn-off transient of -0.9 s respectively.
Breadboard linear array scan imager using LSI solid-state technology

NASA Technical Reports Server (NTRS)

Tracy, R. A.; Brennan, J. A.; Frankel, D. G.; Noll, R. E.

1976-01-01

The performance of large scale integration photodiode arrays in a linear array scan (pushbroom) breadboard was evaluated for application to multispectral remote sensing of the earth's resources. The technical approach, implementation, and test results of the program are described. Several self scanned linear array visible photodetector focal plane arrays were fabricated and evaluated in an optical bench configuration. A 1728-detector array operating in four bands (0.5 - 1.1 micrometer) was evaluated for noise, spectral response, dynamic range, crosstalk, MTF, noise equivalent irradiance, linearity, and image quality. Other results include image artifact data, temporal characteristics, radiometric accuracy, calibration experience, chip alignment, and array fabrication experience. Special studies and experimentation were included in long array fabrication and real-time image processing for low-cost ground stations, including the use of computer image processing. High quality images were produced and all objectives of the program were attained.
Thermopile Detector Arrays for Space Science Applications

NASA Technical Reports Server (NTRS)

Foote, M. C.; Kenyon, M.; Krueger, T. R.; McCann, T. A.; Chacon, R.; Jones, E. W.; Dickie, M. R.; Schofield, J. T.; McCleese, D. J.; Gaalema, S.

2004-01-01

Thermopile detectors are widely used in uncooled applications where small numbers of detectors are required, particularly in low-cost commercial applications or applications requiring accurate radiometry. Arrays of thermopile detectors, however, have not been developed to the extent of uncooled bolometer and pyroelectric/ferroelectric arrays. Efforts at JPL seek to remedy this deficiency by developing high performance thin-film thermopile detectors in both linear and two-dimensional formats. The linear thermopile arrays are produced by bulk micromachining and wire bonded to separate CMOS readout electronic chips. Such arrays are currently being fabricated for the Mars Climate Sounder instrument, scheduled for launch in 2005. Progress is also described towards realizing a two-dimensional thermopile array built over CMOS readout circuitry in the substrate.
On the current drive capability of low dimensional semiconductors: 1D versus 2D

DOE PAGES

Zhu, Y.; Appenzeller, J.

2015-10-29

Low-dimensional electronic systems are at the heart of many scaling approaches currently pursuit for electronic applications. Here, we present a comparative study between an array of one-dimensional (1D) channels and its two-dimensional (2D) counterpart in terms of current drive capability. Lastly, our findings from analytical expressions derived in this article reveal that under certain conditions an array of 1D channels can outperform a 2D field-effect transistor because of the added degree of freedom to adjust the threshold voltage in an array of 1D devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, B.W.; et al.

The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater thanmore » $10^7$ and non-uniformity less than $$15\\%$$, time resolution less than 50 psec for single photons and spatial resolution of 700~microns in both lateral dimensions. We describe the R\\&D performed to develop large-area micro-channel plate glass substrates, resistive and secondary-emitting coatings, large-area bialkali photocathodes, and RF-capable hermetic packaging. In addition, the Collaboration developed the necessary electronics for large systems capable of precise timing, built up from a custom low-power 15-GigaSample/sec waveform sampling 6-channel integrated circuit and supported by a two-level modular data acquisition system based on Field-Programmable Gate Arrays for local control, data-sparcification, and triggering. We discuss the formation, organization, and technical successes and short-comings of the Collaboration. The Collaboration ended in December 2012 with a transition from R\\&D to commercialization.« less
Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jing, YouLiang; Li, ZhiFeng, E-mail: zfli@mail.sitp.ac.cn; Chen, PingPing

We report the dependence of the near-field optical modes in metal-insulator-metal quantum well infrared photodetector (MIM-QWIP) on the incident angles. Three optical modes are observed and attributed to the 2nd- and the 3rd-order surface plasmon polariton (SPP) modes and the localized surface polariton (LSP) mode. In addition to the observation of a responsivity enhancement of 14 times by the LSP mode, the varying pattern of the three modes against the incident angle are revealed, in which the LSP mode is fixed while the 2nd SPP mode splits into two branches and the 3rd SPP mode red-shifts. The detailed mechanisms aremore » analyzed and numerically simulated. The results fit the experiments very well, demonstrating the wavevector coupling effect between the incident light and the metal gratings on the SPP modes. Our work will pave the way to fully understanding the influence of incident angles on a detector’s response for applying the MIM-QWIP to focal plane arrays.« less
Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals

NASA Astrophysics Data System (ADS)

Zhong, Mianzeng; Zhou, Ke; Wei, Zhongming; Li, Yan; Li, Tao; Dong, Huanli; Jiang, Lang; Li, Jingbo; Hu, Wenping

2018-07-01

Orthorhombic MoO3 (α-MoO3) is a typical layered n-type semiconductor with optical band gap over 2.7 eV, which have been widely studied in catalysis, gas sensing, lithium-ion batteries, field-emission, photoelectrical, photochromic and electrochromic devices, supercapacitors and organic solar cells. However, the bottleneck of generation large size atomic thin two-dimensional (2D) α-MoO3 crystals remain challenging this field (normally several micrometers size). Herein, we developed a facile vapor–solid (VS) process for controllable growth of large-size 2D α-MoO3 single crystals with a few nanometers thick and over 300 μm in lateral size. High-performance solar-blind photodetectors were fabricated based on individual 2D α-MoO3 single crystal. The detectors demonstrate outstanding optoelectronic properties under solar-blind UV light (254 nm), with a photoresponsivity of 67.9 A W‑1, external quantum efficiency of 3.3 × 104%. More important, the devices showed strong in-plane anisotropy in optoelectronic response and transport properties, e.g. the photocurrent along b-axis was found to be 5 times higher than the values along c-axis under 254 nm UV light, and current ON/OFF ratio and mobility anisotropy is about 2 times high. Our work suggests an optimized synthesis routine for 2D crystals, and the great potential of 2D oxides in functional optoelectronics.
Cooperative single-photon subradiant states in a three-dimensional atomic array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jen, H.H., E-mail: sappyjen@gmail.com

2016-11-15

We propose a complete superradiant and subradiant states that can be manipulated and prepared in a three-dimensional atomic array. These subradiant states can be realized by absorbing a single photon and imprinting the spatially-dependent phases on the atomic system. We find that the collective decay rates and associated cooperative Lamb shifts are highly dependent on the phases we manage to imprint, and the subradiant state of long lifetime can be found for various lattice spacings and atom numbers. We also investigate both optically thin and thick atomic arrays, which can serve for systematic studies of super- and sub-radiance. Our proposal offers an alternative schememore » for quantum memory of light in a three-dimensional array of two-level atoms, which is applicable and potentially advantageous in quantum information processing. - Highlights: • Cooperative single-photon subradiant states in a three-dimensional atomic array. • Subradiant state manipulation via spatially-increasing phase imprinting. • Quantum storage of light in the subradiant state in two-level atoms.« less
Applications of Nanostructured Graphene in Optoelectronics as Transparent Conductors and Photodetectors

NASA Astrophysics Data System (ADS)

Xu, Guowei

Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has unique properties of high carrier mobility, high optical transmittance, chemical inertness and flexibility, making it attractive for electronic and optoelectronic applications, such as graphene transistors, ultrahigh capacitors, transparent conductors (TCs), photodetectors. This work explores novel schemes of nanostructured graphene for optoelectronic applications including advanced TCs and photodetectors. In nanophotonic graphene nanohole arrays patterned using nanoimprinting lithography (NIL), highly efficient chemical doping was achieved on the hole edges. This provides a unique scheme for improving both optical transmittance and electrical conductivity of graphene-based TCs. In plasmonic graphene, Ag nanoparticles were decorated on graphene using thermally assisted self-assembly and NIL. Much enhanced conductivity by a factor of 2-4 was achieved through electron doping in graphene from Ag nanoparticles. More importantly, surface plasmonic effect has been incorporated into plasmonic graphene as advanced TCs with light trapping, which is critical to ultrathin-film optoelectronics such as photovoltaics and photodetectors. Based on plasmonic graphene electric double-layer (EDL) transistor, a novel scheme of photodetection has been demonstrated using plasmonic enhanced local field gating. The resulting tuning of interfacial capacitance as well as the quantum capacitance of graphene manifested as extraordinary photoconductivity and hence photoresponse.

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David

2007-01-01

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.
Thermally Strained Band Gap Engineering of Transition-Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors.

PubMed

Wang, Sheng-Wen; Medina, Henry; Hong, Kuo-Bin; Wu, Chun-Chia; Qu, Yindong; Manikandan, Arumugam; Su, Teng-Yu; Lee, Po-Tsung; Huang, Zhi-Quan; Wang, Zhiming; Chuang, Feng-Chuan; Kuo, Hao-Chung; Chueh, Yu-Lun

2017-09-26

Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS 2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS 2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS 2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS 2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.
Giant photoeffect in proton transport through graphene membranes

NASA Astrophysics Data System (ADS)

Lozada-Hidalgo, Marcelo; Zhang, Sheng; Hu, Sheng; Kravets, Vasyl G.; Rodriguez, Francisco J.; Berdyugin, Alexey; Grigorenko, Alexander; Geim, Andre K.

2018-04-01

Graphene has recently been shown to be permeable to thermal protons1, the nuclei of hydrogen atoms, which sparked interest in its use as a proton-conducting membrane in relevant technologies1-4. However, the influence of light on proton permeation remains unknown. Here we report that proton transport through Pt-nanoparticle-decorated graphene can be enhanced strongly by illuminating it with visible light. Using electrical measurements and mass spectrometry, we find a photoresponsivity of ˜104 A W-1, which translates into a gain of ˜104 protons per photon with response times in the microsecond range. These characteristics are competitive with those of state-of-the-art photodetectors that are based on electron transport using silicon and novel two-dimensional materials5-7. The photo-proton effect could be important for graphene's envisaged use in fuel cells and hydrogen isotope separation. Our observations may also be of interest for other applications such as light-induced water splitting, photocatalysis and novel photodetectors.
Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al{sub x}Ga{sub 1−x}As-graphene composite material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Chiu-Chun; Ling, D. C.; Chi, C. C.

2014-11-03

We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al{sub x}Ga{sub 1−x}As heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27–102 cm{sup −1} with a bias voltage less than −1 V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse.more » Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.« less
Self-assembly of ordered graphene nanodot arrays

DOE PAGES

Camilli, Luca; Jørgensen, Jakob H.; Tersoff, Jerry; ...

2017-06-29

Our ability to fabricate nanoscale domains of uniform size in two-dimensional materials could potentially enable new applications in nanoelectronics and the development of innovative metamaterials. But, achieving even minimal control over the growth of two-dimensional lateral heterostructures at such extreme dimensions has proven exceptionally challenging. Here we show the spontaneous formation of ordered arrays of graphene nano-domains (dots), epitaxially embedded in a two-dimensional boron–carbon–nitrogen alloy. These dots exhibit a strikingly uniform size of 1.6 ± 0.2 nm and strong ordering, and the array periodicity can be tuned by adjusting the growth conditions. Furthemore, we explain this behaviour with a modelmore » incorporating dot-boundary energy, a moiré-modulated substrate interaction and a long-range repulsion between dots. This new two-dimensional material, which theory predicts to be an ordered composite of uniform-size semiconducting graphene quantum dots laterally integrated within a larger-bandgap matrix, holds promise for novel electronic and optoelectronic properties, with a variety of potential device applications.« less
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

PubMed Central

Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R.; Lee, Jaekwang; Basile, Leonardo; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; Ivanov, Ilia N.; Xiao, Kai; Yoon, Mina; Geohegan, David B.

2015-01-01

The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices. PMID:26198727
Perovskite photodetectors with both visible-infrared dual-mode response and super-narrowband characteristics towards photo-communication encryption application.

PubMed

Wu, Ye; Li, Xiaoming; Wei, Yi; Gu, Yu; Zeng, Haibo

2017-12-21

Photo-communication has attracted great attention because of the rapid development of wireless information transmission technology. However, it is still a great challenge in cryptography communications, where it is greatly weakened by the openness of the light channels. Here, visible-infrared dual-mode narrowband perovskite photodetectors were fabricated and a new photo-communication encryption technique was proposed. For the first time, highly narrowband and two-photon absorption (TPA) resultant photoresponses within a single photodetector are demonstrated. The full width at half maximum (FWHM) of the photoresponse is as narrow as 13.6 nm in the visible range, which is superior to state-of-the-art narrowband photodetectors. Furthermore, these two merits of narrowband and TPA characteristics are utilized to encrypt the photo-communication based on the above photodetectors. When sending information and noise signals with 532 and 442 nm laser light simultaneously, the perovskite photodetectors only receive the main information, while the commercial Si photodetector responds to both lights, losing the main information completely. The final data are determined by the secret key through the TPA process as preset. Such narrowband and TPA detection abilities endow the perovskite photodetectors with great potential in future security communication and also provide new opportunities and platforms for encryption techniques.
Application of dot-matrix illumination of liquid crystal phase space light modulator in 3D imaging of APD array

NASA Astrophysics Data System (ADS)

Wang, Shuai; Sun, Huayan; Guo, Huichao

2018-01-01

Aiming at the problem of beam scanning in low-resolution APD array in three-dimensional imaging, a method of beam scanning with liquid crystal phase-space optical modulator is proposed to realize high-resolution imaging by low-resolution APD array. First, a liquid crystal phase spatial light modulator is used to generate a beam array and then a beam array is scanned. Since the sub-beam divergence angle in the beam array is smaller than the field angle of a single pixel in the APD array, the APD's pixels respond only to the three-dimensional information of the beam illumination position. Through the scanning of the beam array, a single pixel is used to collect the target three-dimensional information multiple times, thereby improving the resolution of the APD detector. Finally, MATLAB is used to simulate the algorithm in this paper by using two-dimensional scalar diffraction theory, which realizes the splitting and scanning with a resolution of 5 x 5. The feasibility is verified theoretically.
Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).
Maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

1999-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.
Maskless lithography

DOEpatents

Sweatt, W.C.; Stulen, R.H.

1999-02-09

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.
Method for maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

2000-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.
Development of a 2K x 2K GaAs QWIP Focal Plane Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Jhabvala, C.; Kelly, D.; Hess, L.; Ewin, A.; La, A.; Wacynski, A.; Sun, J.; Adachi, T.;

2013-01-01

We are developing the next generation of GaAs Quantum Well Infrared Photodetector (QWIP) focal plane arrays (FPAs) in preparation for future NASA space-borne Earth observing missions. It is anticipated that these missions will require both wider ground spatial coverage as well as higher ground imaging resolution. In order to demonstrate our capability in meeting these future goals we have taken a two-tiered approach in the next stage of advanced QWIP focal plane array development. We will describe our progress in the development of a 512 x 3,200 (512 x 3K) array format for this next generation thermal imaging array for the NASA Landsat project. However, there currently is no existing readout integrated circuit (ROIC) for this format array.so to demonstrate the ability to scale-up an existing ROIC we developed a 1,920 x 2,048 (2K x 2K) array and it hybridized to a Raytheon SB419 CTIA readout integrated circuit that was scaled up from their existing 512 x 640 SB339 ROIC. Two versions of the 512 x 3K QWIP array were fabricated to accommodate a future design scale-up of both the Indigo 9803 ROIC based on a 25 micron pixel dimension and a scale up of the Indigo 9705 ROIC based on a 30 micron pixel dimension. Neither readout for the 512 x 3K has yet to be developed but we have fabricated both versions of the array. We describe the design, development and test results of this effort as well as the specific applications these FPAs are intended to address.

Multiple-Diode-Laser Gas-Detection Spectrometer

NASA Technical Reports Server (NTRS)

Webster, Christopher R.; Beer, Reinhard; Sander, Stanley P.

1988-01-01

Small concentrations of selected gases measured automatically. Proposed multiple-laser-diode spectrometer part of system for measuring automatically concentrations of selected gases at part-per-billion level. Array of laser/photodetector pairs measure infrared absorption spectrum of atmosphere along probing laser beams. Adaptable to terrestrial uses as monitoring pollution or control of industrial processes.
Demonstration of First 9 Micron cutoff 640 x 486 GaAs Based Quantum Well Infrared PhotoDetector (QWIP) Snap-Shot Camera

NASA Technical Reports Server (NTRS)

Gunapala, S.; Bandara, S. V.; Liu, J. K.; Hong, W.; Sundaram, M.; Maker, P. D.; Muller, R. E.

1997-01-01

In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.
Application and performance of an ML-EM algorithm in NEXT

NASA Astrophysics Data System (ADS)

Simón, A.; Lerche, C.; Monrabal, F.; Gómez-Cadenas, J. J.; Álvarez, V.; Azevedo, C. D. R.; Benlloch-Rodríguez, J. M.; Borges, F. I. G. M.; Botas, A.; Cárcel, S.; Carrión, J. V.; Cebrián, S.; Conde, C. A. N.; Díaz, J.; Diesburg, M.; Escada, J.; Esteve, R.; Felkai, R.; Fernandes, L. M. P.; Ferrario, P.; Ferreira, A. L.; Freitas, E. D. C.; Goldschmidt, A.; González-Díaz, D.; Gutiérrez, R. M.; Hauptman, J.; Henriques, C. A. O.; Hernandez, A. I.; Hernando Morata, J. A.; Herrero, V.; Jones, B. J. P.; Labarga, L.; Laing, A.; Lebrun, P.; Liubarsky, I.; López-March, N.; Losada, M.; Martín-Albo, J.; Martínez-Lema, G.; Martínez, A.; McDonald, A. D.; Monteiro, C. M. B.; Mora, F. J.; Moutinho, L. M.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Nygren, D. R.; Palmeiro, B.; Para, A.; Pérez, J.; Querol, M.; Renner, J.; Ripoll, L.; Rodríguez, J.; Rogers, L.; Santos, F. P.; dos Santos, J. M. F.; Sofka, C.; Sorel, M.; Stiegler, T.; Toledo, J. F.; Torrent, J.; Tsamalaidze, Z.; Veloso, J. F. C. A.; Webb, R.; White, J. T.; Yahlali, N.

2017-08-01

The goal of the NEXT experiment is the observation of neutrinoless double beta decay in 136Xe using a gaseous xenon TPC with electroluminescent amplification and specialized photodetector arrays for calorimetry and tracking. The NEXT Collaboration is exploring a number of reconstruction algorithms to exploit the full potential of the detector. This paper describes one of them: the Maximum Likelihood Expectation Maximization (ML-EM) method, a generic iterative algorithm to find maximum-likelihood estimates of parameters that has been applied to solve many different types of complex inverse problems. In particular, we discuss a bi-dimensional version of the method in which the photosensor signals integrated over time are used to reconstruct a transverse projection of the event. First results show that, when applied to detector simulation data, the algorithm achieves nearly optimal energy resolution (better than 0.5% FWHM at the Q value of 136Xe) for events distributed over the full active volume of the TPC.
Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

NASA Technical Reports Server (NTRS)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.
Surface-Micromachined Planar Arrays of Thermopiles

NASA Technical Reports Server (NTRS)

Foote, Marc C.

2003-01-01

Planar two-dimensional arrays of thermopiles intended for use as thermal-imaging detectors are to be fabricated by a process that includes surface micromachining. These thermopile arrays are designed to perform better than do prior two-dimensional thermopile arrays. The lower performance of prior two-dimensional thermopile arrays is attributed to the following causes: The thermopiles are made from low-performance thermoelectric materials. The devices contain dielectric supporting structures, the thermal conductances of which give rise to parasitic losses of heat from detectors to substrates. The bulk-micromachining processes sometimes used to remove substrate material under the pixels, making it difficult to incorporate low-noise readout electronic circuitry. The thermoelectric lines are on the same level as the infrared absorbers, thereby reducing fill factor. The improved pixel design of a thermopile array of the type under development is expected to afford enhanced performance by virtue of the following combination of features: Surface-micromachined detectors are thermally isolated through suspension above readout circuitry. The thermopiles are made of such high-performance thermoelectric materials as Bi-Te and Bi-Sb-Te alloys. Pixel structures are supported only by the thermoelectric materials: there are no supporting dielectric structures that could leak heat by conduction to the substrate.
Analysis of near-field components of a plasmonic optical antenna and their contribution to quantum dot infrared photodetector enhancement.

PubMed

Gu, Guiru; Vaillancourt, Jarrod; Lu, Xuejun

2014-10-20

In this paper, we analyze near-field vector components of a metallic circular disk array (MCDA) plasmonic optical antenna and their contribution to quantum dot infrared photodetector (QDIP) enhancement. The near-field vector components of the MCDA optical antenna and their distribution in the QD active region are simulated. The near-field overlap integral with the QD active region is calculated at different wavelengths and compared with the QDIP enhancement spectrum. The x-component (E(x)) of the near-field vector shows a larger intensity overlap integral and stronger correlation with the QDIP enhancement than E(z) and thus is determined to be the major near-field component to the QDIP enhancement.
Nanotunneling Junction-based Hyperspectal Polarimetric Photodetector and Detection Method

NASA Technical Reports Server (NTRS)

Son, Kyung-ah (Inventor); Moon, Jeongsun J. (Inventor); Chattopadhyay, Goutam (Inventor); Liao, Anna (Inventor); Ting, David (Inventor)

2009-01-01

A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

Two-dimensional free-space beam steering with an optical phased array on silicon-on-insulator.

PubMed

Doylend, J K; Heck, M J R; Bovington, J T; Peters, J D; Coldren, L A; Bowers, J E

2011-10-24

We demonstrate a 16-channel, independently tuned waveguide surface grating optical phased array in silicon for two dimensional beam steering with a total field of view of 20° x 14°, beam width of 0.6° x 1.6°, and full-window background peak suppression of 10 dB. © 2011 Optical Society of America
High Fidelity Tape Transfer Printing Based On Chemically Induced Adhesive Strength Modulation

NASA Astrophysics Data System (ADS)

Sim, Kyoseung; Chen, Song; Li, Yuhang; Kammoun, Mejdi; Peng, Yun; Xu, Minwei; Gao, Yang; Song, Jizhou; Zhang, Yingchun; Ardebili, Haleh; Yu, Cunjiang

2015-11-01

Transfer printing, a two-step process (i.e. picking up and printing) for heterogeneous integration, has been widely exploited for the fabrication of functional electronics system. To ensure a reliable process, strong adhesion for picking up and weak or no adhesion for printing are required. However, it is challenging to meet the requirements of switchable stamp adhesion. Here we introduce a simple, high fidelity process, namely tape transfer printing(TTP), enabled by chemically induced dramatic modulation in tape adhesive strength. We describe the working mechanism of the adhesion modulation that governs this process and demonstrate the method by high fidelity tape transfer printing several types of materials and devices, including Si pellets arrays, photodetector arrays, and electromyography (EMG) sensors, from their preparation substrates to various alien substrates. High fidelity tape transfer printing of components onto curvilinear surfaces is also illustrated.
Integrated Miniature Arrays of Optical Biomolecule Detectors

NASA Technical Reports Server (NTRS)

Iltchenko, Vladimir; Maleki, Lute; Lin, Ying; Le, Thanh

2009-01-01

Integrated miniature planar arrays of optical sensors for detecting specific biochemicals in extremely small quantities have been proposed. An array of this type would have an area of about 1 cm2. Each element of the array would include an optical microresonator that would have a high value of the resonance quality factor (Q . 107). The surface of each microresonator would be derivatized to make it bind molecules of a species of interest, and such binding would introduce a measurable change in the optical properties of the microresonator. Because each microresonator could be derivatized for detection of a specific biochemical different from those of the other microresonators, it would be possible to detect multiple specific biochemicals by simultaneous or sequential interrogation of all the elements in the array. Moreover, the derivatization would make it unnecessary to prepare samples by chemical tagging. Such interrogation would be effected by means of a grid of row and column polymer-based optical waveguides that would be integral parts of a chip on which the array would be fabricated. The row and column polymer-based optical waveguides would intersect at the elements of the array (see figure). At each intersection, the row and column waveguides would be optically coupled to one of the microresonators. The polymer-based waveguides would be connected via optical fibers to external light sources and photodetectors. One set of waveguides and fibers (e.g., the row waveguides and fibers) would couple light from the sources to the resonators; the other set of waveguides and fibers (e.g., the column waveguides and fibers) would couple light from the microresonators to the photodetectors. Each microresonator could be addressed individually by row and column for measurement of its optical transmission. Optionally, the chip could be fabricated so that each microresonator would lie inside a microwell, into which a microscopic liquid sample could be dispensed.
Nonlinear stability of Taylor's vortex array

NASA Technical Reports Server (NTRS)

Lin, S. P.; Tobak, M.

1987-01-01

It is proved that the two-dimensional Taylor vortex array, which is an exact unsteady solution of the Navier-Stokes equation, is globally and asymptotically stable in the mean with respect to three-dimensional periodic disturbances. A time-dependent bound on the decay rate of the kinetic energy of disturbances is obtained.
Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

NASA Technical Reports Server (NTRS)

Dimov, Fedor (Inventor); Ai, Jun (Inventor)

2015-01-01

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.
Performance of a compact, hybrid optical evanescent-wave sensor for chemical and biological applications

NASA Astrophysics Data System (ADS)

Helmers, H.; Greco, Pierre; Benech, Pierre; Rustad, Rolf; Kherrat, Rochdi; Bouvier, Gérard

1996-02-01

We describe a hybrid evanescent-wave sensor component that we fabricated by using an integrated optical interferometer with a specially adapted photodetector array. The design of the interferometer is based on the use of tapered waveguides to obtain two intersecting collimated beams. Phase shifts can be measured with an angular precision of better than 10-3 rad, which corresponds to a superstrate index change inferior of 10-6 with our structure. The interest in the device as a chemical sensor is experimentally demonstrated. The same optical component could be used in a variety of other sensor applications, e.g., biological and immunological sensors.
Retention in porous layer pillar array planar separation platforms

DOE PAGES

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.; ...

2016-08-11

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less
Retention in porous layer pillar array planar separation platforms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lincoln, Danielle R.; Lavrik, Nickolay V.; Kravchenko, Ivan I.

Here, this work presents the retention capabilities and surface area enhancement of highly ordered, high-aspect-ratio, open-platform, two-dimensional (2D) pillar arrays when coated with a thin layer of porous silicon oxide (PSO). Photolithographically prepared pillar arrays were coated with 50–250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either octadecyltrichlorosilane or n-butyldimethylchlorosilane. Theoretical calculations indicate that a 50 nm layer of PSO increases the surface area of a pillar nearly 120-fold. Retention capabilities were tested by observing capillary-action-driven development under various conditions, as well as by running one-dimensional separations on varying thicknesses of PSO. Increasing the thicknessmore » of PSO on an array clearly resulted in greater retention of the analyte(s) in question in both experiments. In culmination, a two-dimensional separation of fluorescently derivatized amines was performed to further demonstrate the capabilities of these fabricated platforms.« less
Method for maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.« less
Maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweatt, W.C.; Stulen, R.H.

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.« less
Coordinate axes, location of origin, and redundancy for the one and two-dimensional discrete Fourier transform

NASA Technical Reports Server (NTRS)

Ioup, G. E.; Ioup, J. W.

1985-01-01

Appendix 4 of the Study of One- and Two-Dimensional Filtering and Deconvolution Algorithms for a Streaming Array Computer discusses coordinate axes, location of origin, and redundancy for the one- and two-dimensional Fourier transform for complex and real data.
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.
Dual-detection confocal fluorescence microscopy: fluorescence axial imaging without axial scanning.

PubMed

Lee, Dong-Ryoung; Kim, Young-Duk; Gweon, Dae-Gab; Yoo, Hongki

2013-07-29

We propose a new method for high-speed, three-dimensional (3-D) fluorescence imaging, which we refer to as dual-detection confocal fluorescence microscopy (DDCFM). In contrast to conventional beam-scanning confocal fluorescence microscopy, where the focal spot must be scanned either optically or mechanically over a sample volume to reconstruct a 3-D image, DDCFM can obtain the depth of a fluorescent emitter without depth scanning. DDCFM comprises two photodetectors, each with a pinhole of different size, in the confocal detection system. Axial information on fluorescent emitters can be measured by the axial response curve through the ratio of intensity signals. DDCFM can rapidly acquire a 3-D fluorescent image from a single two-dimensional scan with less phototoxicity and photobleaching than confocal fluorescence microscopy because no mechanical depth scans are needed. We demonstrated the feasibility of the proposed method by phantom studies.
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321
High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn; Tang, Libin, E-mail: scitang@163.com

2016-08-15

A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. Themore » devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.« less
Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

PubMed

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.
Optically interconnected phased arrays

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Kunath, Richard R.

1988-01-01

Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed.
Black GE based on crystalline/amorphous core/shell nanoneedle arrays

DOEpatents

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.
Depth of interaction determination in monolithic scintillator with double side SiPM readout.

PubMed

Morrocchi, Matteo; Ambrosi, Giovanni; Bisogni, Maria Giuseppina; Bosi, Filippo; Boretto, Marco; Cerello, Piergiorgio; Ionica, Maria; Liu, Ben; Pennazio, Francesco; Piliero, Maria Antonietta; Pirrone, Giovanni; Postolache, Vasile; Wheadon, Richard; Del Guerra, Alberto

2017-12-01

Monolithic scintillators read out by arrays of photodetectors represent a promising solution to obtain high spatial resolution and the depth of interaction (DOI) of the annihilation photon. We have recently investigated a detector geometry composed of a monolithic scintillator readout on two sides by silicon photomultiplier (SiPM) arrays, and we have proposed two parameters for the DOI determination: the difference in the number of triggered SiPMs on the two sides of the detector and the difference in the maximum collected signal on a single SiPM on each side. This work is focused on the DOI calibration and on the determination of the capability of our detector. For the DOI calibration, we studied a method which can be implemented also in detectors mounted in a full PET scanner. We used a PET detector module composed of a monolithic 20 × 20 × 10 mm 3 LYSO scintillator crystal coupled on two opposite faces to two arrays of SiPMs. On each side, the scintillator was coupled to 6 × 6 SiPMs. In this paper, the two parameters previously proposed for the DOI determination were calibrated with two different methods. The first used a lateral scan of the detector with a collimated 511 keV pencil beam at steps of 0.5 mm to study the detector DOI capability, while the second used the background radiation of the 176 Lu in the scintillator. The DOI determination capability was tested on different regions of the detector using each parameter and the combination of the two. With both parameters for the DOI determination, in the lateral scan, the bias between the mean reconstructed DOI and the real beam position was lower than 0.3 mm, and the DOI distribution had a standard deviation of about 1.5 mm. When using the calibration with the radioactivity of the LYSO, the mean bias increased of about 0.2 mm but with no degradation of the standard deviation of the DOI distribution. The two parameters allow to achieve a DOI resolution comparable with the state of the art, giving a continuous information about the three-dimensional interaction position of the scintillation. These results were obtained by using simple estimators and a detector scalable to a whole PET system. The DOI calibration obtained using lutetium natural radioactivity gives results comparable to the other standard method but appears more readily applicable to detectors mounted in a full PET scanner.
OPTICAL PROCESSING OF INFORMATION: Multistage optoelectronic two-dimensional image switches

NASA Astrophysics Data System (ADS)

Fedorov, V. B.

1994-06-01

The implementation principles and the feasibility of construction of high-throughput multistage optoelectronic switches, capable of transmitting data in the form of two-dimensional images along interconnected pairs of optical channels, are considered. Different ways of realising compact switches are proposed. They are based on the use of polarisation-sensitive elements, arrays of modulators of the plane of polarisation of light, arrays of objectives, and free-space optics. Optical systems of such switches can theoretically ensure that the resolution and optical losses in two-dimensional image transmission are limited only by diffraction. Estimates are obtained of the main maximum-performance parameters of the proposed optoelectronic image switches.

Plasmonic graded-chains as deep-subwavelength light concentrators

NASA Astrophysics Data System (ADS)

Esteves-López, Natalia; Pastawski, Horacio M.; Bustos-Marún, Raúl A.

2015-04-01

We have studied the plasmonic properties of aperiodic arrays of identical nanoparticles (NPs) formed by two opposite and equal graded-chains (a chain where interactions change gradually). We found that these arrays concentrate the external electromagnetic fields even in the long wavelength limit. The phenomenon was understood by identifying the system with an effective cavity where plasmonics excitations are trapped between effective band edges, resulting from the change of passband with the NP's position. Dependence of excitation concentration on several system parameters was also assessed. This includes different gradings as well as NP couplings, damping, and resonant frequencies. In the spirit of the scaling laws in condensed matter physics, we developed a theory that allows us to rationalize all these system parameters into universal curves. The theory is quite general and can also be used in many other situations (different arrays for example). Additionally, we also provided an analytical solution, in the tight-binding limit, for the plasmonic response of homogeneous linear chains of NPs illuminated by a plane wave. Our results can find applications in sensing, near field imaging, plasmon-enhanced photodetectors, as well as to increase solar cell efficiency.
Development of an ultrahigh-resolution Si-PM-based dual-head GAGG coincidence imaging system

NASA Astrophysics Data System (ADS)

Yamamoto, Seiichi; Watabe, Hiroshi; Kanai, Yasukazu; Kato, Katsuhiko; Hatazawa, Jun

2013-03-01

A silicon photomultiplier (Si-PM) is a promising photodetector for high resolution PET systems due to its small channel size and high gain. Using Si-PMs, it will be possible to develop a high resolution imaging systems. For this purpose, we developed a small field-of-view (FOV) ultrahigh-resolution Si-PM-based dual-head coincidence imaging system for small animals and plant research. A new scintillator, Ce doped Gd3Al12Ga3O12 (GAGG), was selected because of its high light output and its emission wavelength matched with the Si-PM arrays and contained no radioactivity. Each coincidence imaging block detector consists of 0.5×0.5×5 mm3 GAGG pixels combined with a 0.1-mm thick reflector to form a 20×17 matrix that was optically coupled to a Si-PM array (Hamamatsu MPPC S11064-050P) with a 1.5-mm thick light guide. The GAGG block size was 12.0×10.2 mm2. Two GAGG block detectors were positioned face to face and set on a flexible arm based detector stand. All 0.5 mm GAGG pixels in the block detectors were clearly resolved in the 2-dimensional position histogram. The energy resolution was 14.4% FWHM for the Cs-137 gamma ray. The spatial resolution was 0.7 mm FWHM measured using a 0.25 mm diameter Na-22 point source. Small animal and plant images were successfully obtained. We conclude that our developed ultrahigh-resolution Si-PM-based dual-head coincidence imaging system is promising for small animal and plant imaging research.
Size dependence in tunneling spectra of PbSe quantum-dot arrays.

PubMed

Ou, Y C; Cheng, S F; Jian, W B

2009-07-15

Interdot Coulomb interactions and collective Coulomb blockade were theoretically argued to be a newly important topic, and experimentally identified in semiconductor quantum dots, formed in the gate confined two-dimensional electron gas system. Developments of cluster science and colloidal synthesis accelerated the studies of electron transport in colloidal nanocrystal or quantum-dot solids. To study the interdot coupling, various sizes of two-dimensional arrays of colloidal PbSe quantum dots are self-assembled on flat gold surfaces for scanning tunneling microscopy and scanning tunneling spectroscopy measurements at both room and liquid-nitrogen temperatures. The tip-to-array, array-to-substrate, and interdot capacitances are evaluated and the tunneling spectra of quantum-dot arrays are analyzed by the theory of collective Coulomb blockade. The current-voltage of PbSe quantum-dot arrays conforms properly to a scaling power law function. In this study, the dependence of tunneling spectra on the sizes (numbers of quantum dots) of arrays is reported and the capacitive coupling between quantum dots in the arrays is explored.
Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

PubMed Central

Zhou, Jiachen

2017-01-01

Abstract Recent years have witnessed skyrocketing research achievements in organic–inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs‐based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single‐component perovskites in terms of different micromorphologies are discussed, namely, 3D thin‐film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite‐based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs‐based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites‐based photodetectors. PMID:29375959
Two dimensional thermo-optic beam steering using a silicon photonic optical phased array

NASA Astrophysics Data System (ADS)

Mahon, Rita; Preussner, Marcel W.; Rabinovich, William S.; Goetz, Peter G.; Kozak, Dmitry A.; Ferraro, Mike S.; Murphy, James L.

2016-03-01

Components for free space optical communication terminals such as lasers, amplifiers, and receivers have all seen substantial reduction in both size and power consumption over the past several decades. However, pointing systems, such as fast steering mirrors and gimbals, have remained large, slow and power-hungry. Optical phased arrays provide a possible solution for non-mechanical beam steering devices that can be compact and lower in power. Silicon photonics is a promising technology for phased arrays because it has the potential to scale to many elements and may be compatible with CMOS technology thereby enabling batch fabrication. For most free space optical communication applications, two-dimensional beam steering is needed. To date, silicon photonic phased arrays have achieved two-dimensional steering by combining thermo-optic steering, in-plane, with wavelength tuning by means of an output grating to give angular tuning, out-of-plane. While this architecture might work for certain static communication links, it would be difficult to implement for moving platforms. Other approaches have required N2 controls for an NxN element phased array, which leads to complexity. Hence, in this work we demonstrate steering using the thermo-optic effect for both dimensions with a simplified steering mechanism requiring only two control signals, one for each steering dimension.
Two-dimensional fluid droplet arrays generated using a single nozzle

DOEpatents

Lee, Eric R.; Perl, Martin L.

1999-11-02

Amplitudes of drive pulses received by a horizontally-placed dropper determine the horizontal displacements of droplets relative to an ejection aperture of the dropper. The drive pulses are varied such that the dropper generates a two-dimensional array of vertically-falling droplets. Vertical and horizontal interdroplet spacings may be varied in real time. Applications include droplet analysis experiments such as Millikan fractional charge searches and aerosol characterization, as well as material deposition applications.
Gratings and Random Reflectors for Near-Infrared PIN Diodes

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Liu, John; Ting, David

2007-01-01

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.
Extended Hubbard model for mesoscopic transport in donor arrays in silicon

NASA Astrophysics Data System (ADS)

Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

2017-12-01

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.
Fiber optic sensors for gas turbine control

NASA Technical Reports Server (NTRS)

Shu, Emily Yixie (Inventor); Petrucco, Louis Jacob (Inventor); Daum, Wolfgang (Inventor)

2005-01-01

An apparatus for detecting flashback occurrences in a premixed combustor system having at least one fuel nozzle includes at least one photodetector and at least one fiber optic element coupled between the at least one photodetector and a test region of the combustor system wherein a respective flame of the fuel nozzle is not present under normal operating conditions. A signal processor monitors a signal of the photodetector. The fiber optic element can include at least one optical fiber positioned within a protective tube. The fiber optic element can include two fiber optic elements coupled to the test region. The optical fiber and the protective tube can have lengths sufficient to situate the photodetector outside of an engine compartment. A plurality of fuel nozzles and a plurality of fiber optic elements can be used with the fiber optic elements being coupled to respective fuel nozzles and either to the photodetector or, wherein a plurality of photodetectors are used, to respective ones of the plurality of photodetectors. The signal processor can include a digital signal processor.
Fiber optic sensors for gas turbine control

NASA Technical Reports Server (NTRS)

Shu, Emily Yixie (Inventor); Brown, Dale Marius (Inventor); Petrucco, Louis Jacob (Inventor); Lovett, Jeffery Allan (Inventor); Daum, Wolfgang (Inventor); Dunki-Jacobs, Robert John (Inventor)

2003-01-01

An apparatus for detecting flashback occurrences in a premixed combustor system having at least one fuel nozzle includes at least one photodetector and at least one fiber optic element coupled between the at least one photodetector and a test region of the combustor system wherein a respective flame of the fuel nozzle is not present under normal operating conditions. A signal processor monitors a signal of the photodetector. The fiber optic element can include at least one optical fiber positioned within a protective tube. The fiber optic element can include two fiber optic elements coupled to the test region. The optical fiber and the protective tube can have lengths sufficient to situate the photodetector outside of an engine compartment. A plurality of fuel nozzles and a plurality of fiber optic elements can be used with the fiber optic elements being coupled to respective fuel nozzles and either to the photodetector or, wherein a plurality of photodetectors are used, to respective ones of the plurality of photodetectors. The signal processor can include a digital signal processor.
Fiber optic sensors for gas turbine control

NASA Technical Reports Server (NTRS)

Shu, Emily Yixie (Inventor); Brown, Dale Marius (Inventor); Petrucco, Louis Jacob (Inventor); Lovett, Jeffery Allan (Inventor); Daum, Wolfgang (Inventor); Dunki-Jacobs, Robert John (Inventor)

1999-01-01

An apparatus for detecting flashback occurrences in a premixed combustor system having at least one fuel nozzle includes at least one photodetector and at least one fiber optic element coupled between the at least one photodetector and a test region of the combustor system wherein a respective flame of the fuel nozzle is not present under normal operating conditions. A signal processor monitors a signal of the photodetector. The fiber optic element can include at least one optical fiber positioned within a protective tube. The fiber optic element can include two fiber optic elements coupled to the test region. The optical fiber and the protective tube can have lengths sufficient to situate the photodetector outside of an engine compartment. A plurality of fuel nozzles and a plurality of fiber optic elements can be used with the fiber optic elements being coupled to respective fuel nozzles and either to the photodetector or, wherein a plurality of photodetectors are used, to respective ones of the plurality of photodetectors. The signal processor can include a digital signal processor.
Silicon-on-insulator multimode-interference waveguide-based arrayed optical tweezers (SMART) for two-dimensional microparticle trapping and manipulation.

PubMed

Lei, Ting; Poon, Andrew W

2013-01-28

We demonstrate two-dimensional optical trapping and manipulation of 1 μm and 2.2 μm polystyrene particles in an 18 μm-thick fluidic cell at a wavelength of 1565 nm using the recently proposed Silicon-on-insulator Multimode-interference (MMI) waveguide-based ARrayed optical Tweezers (SMART) technique. The key component is a 100 μm square-core silicon waveguide with mm length. By tuning the fiber-coupling position at the MMI waveguide input facet, we demonstrate various patterns of arrayed optical tweezers that enable optical trapping and manipulation of particles. We numerically simulate the physical mechanisms involved in the arrayed trap, including the optical force, the heat transfer and the thermal-induced microfluidic flow.
Dual Band Deep Ultraviolet AlGaN Photodetectors

NASA Technical Reports Server (NTRS)

Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

2007-01-01

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.
Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishnyakov, A. V.; Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru; Brunev, D. V.

2014-03-03

In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred frommore » our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.« less
Al{sub x}Ga{sub 1-x}N-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cicek, E.; McClintock, R.; Cho, C. Y.

2013-11-04

We report on high performance Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is grown via metalorganic chemical vapor deposition. Then, we systematically optimized the device design and material doping through the growth and processing of multiple devices. After optimization, uniform and solar-blind operation is observed throughout the array; at the peak detection wavelength of 275 nm, 729 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼80% and ∼176 mA/W, respectively, increasing to 89% under 5 V of reverse bias. Taking the reflection loses into consideration,more » the internal quantum efficiency of these optimized PD can be estimated to be as high as ∼98%. The visible rejection ratio measured to be more than six orders of magnitude. Electrical measurements yielded a low-dark current density: <2 × 10{sup −9} A/cm{sup 2}, at 10 V of reverse bias.« less
Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

PubMed

Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

2015-10-14

Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.
Electrophoretic and field-effect graphene for all-electrical DNA array technology.

PubMed

Xu, Guangyu; Abbott, Jeffrey; Qin, Ling; Yeung, Kitty Y M; Song, Yi; Yoon, Hosang; Kong, Jing; Ham, Donhee

2014-09-05

Field-effect transistor biomolecular sensors based on low-dimensional nanomaterials boast sensitivity, label-free operation and chip-scale construction. Chemical vapour deposition graphene is especially well suited for multiplexed electronic DNA array applications, since its large two-dimensional morphology readily lends itself to top-down fabrication of transistor arrays. Nonetheless, graphene field-effect transistor DNA sensors have been studied mainly at single-device level. Here we create, from chemical vapour deposition graphene, field-effect transistor arrays with two features representing steps towards multiplexed DNA arrays. First, a robust array yield--seven out of eight transistors--is achieved with a 100-fM sensitivity, on par with optical DNA microarrays and at least 10 times higher than prior chemical vapour deposition graphene transistor DNA sensors. Second, each graphene acts as an electrophoretic electrode for site-specific probe DNA immobilization, and performs subsequent site-specific detection of target DNA as a field-effect transistor. The use of graphene as both electrode and transistor suggests a path towards all-electrical multiplexed graphene DNA arrays.
A new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array

NASA Astrophysics Data System (ADS)

Xia, Wenze; Ma, Yayun; Han, Shaokun; Wang, Yulin; Liu, Fei; Zhai, Yu

2018-06-01

One of the most important goals of research on three-dimensional nonscanning laser imaging systems is the improvement of the illumination system. In this paper, a new three-dimensional nonscanning laser imaging system based on the illumination pattern of a point-light-source array is proposed. This array is obtained using a fiber array connected to a laser array with each unit laser having independent control circuits. This system uses a point-to-point imaging process, which is realized using the exact corresponding optical relationship between the point-light-source array and a linear-mode avalanche photodiode array detector. The complete working process of this system is explained in detail, and the mathematical model of this system containing four equations is established. A simulated contrast experiment and two real contrast experiments which use the simplified setup without a laser array are performed. The final results demonstrate that unlike a conventional three-dimensional nonscanning laser imaging system, the proposed system meets all the requirements of an eligible illumination system. Finally, the imaging performance of this system is analyzed under defocusing situations, and analytical results show that the system has good defocusing robustness and can be easily adjusted in real applications.
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

PubMed Central

Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai; Chen, Chang-Hsiao; Tsai, Meng-Lin; Chang, Yung-Huang; Liang, Chi-Te; Chen, Yu-Ze; Chueh, Yu-Lun; He, Jr-Hau; Chou, Mei-Yin; Li, Lain-Jong

2014-01-01

Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108. Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity. PMID:24451916
Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

DOE PAGES

Léonard, François; Spataru, Catalin D.; Goldflam, Michael; ...

2017-04-04

The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at themore » contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.« less

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Léonard, François; Spataru, Catalin D.; Goldflam, Michael

The holy grail of photodetector technology is dynamic wavelength tunability. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. We employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We also reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at themore » contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even in the absence of phonon or impurity scattering. Furthermore, we show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. Several of the effects discussed here should be applicable to a broad range of one- and two-dimensional materials and devices.« less
UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors

PubMed Central

Zhou, Peng; Wang, Na; Ma, Yang

2018-01-01

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm−2, on/off current ratio of 3.01 × 104, and responsivity of 1.83 A·W−1 when a UV irradiation of 3.26 mW·cm−2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite. PMID:29303994
UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors.

PubMed

Chen, Changsong; Zhou, Peng; Wang, Na; Ma, Yang; San, Haisheng

2018-01-05

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm -2 , on/off current ratio of 3.01 × 10⁴, and responsivity of 1.83 A·W -1 when a UV irradiation of 3.26 mW·cm -2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.
Optical Interconnection Via Computer-Generated Holograms

NASA Technical Reports Server (NTRS)

Liu, Hua-Kuang; Zhou, Shaomin

1995-01-01

Method of free-space optical interconnection developed for data-processing applications like parallel optical computing, neural-network computing, and switching in optical communication networks. In method, multiple optical connections between multiple sources of light in one array and multiple photodetectors in another array made via computer-generated holograms in electrically addressed spatial light modulators (ESLMs). Offers potential advantages of massive parallelism, high space-bandwidth product, high time-bandwidth product, low power consumption, low cross talk, and low time skew. Also offers advantage of programmability with flexibility of reconfiguration, including variation of strengths of optical connections in real time.
Performance improvement induced by asymmetric Y2O3-coated device structure to carbon-nanotube-film based photodetectors

NASA Astrophysics Data System (ADS)

Wang, Fanglin; Xu, Haitao; Huang, Huixin; Ma, Ze; Wang, Sheng; Peng, Lian-Mao

2017-11-01

Film-based semiconducting carbon nanotube (CNT) photodetectors are promising candidates for industrial applications. However, unintentional doping from the environment such as water/oxygen (H2O/O2) redox, polymers, etc. changes the doping level of the CNT film. Here, we evaluate the performance of film-based barrier-free bipolar diodes (BFBDs), which are basically semiconducting CNT films asymmetrically contacted by perfect n-type ohmic contact (scandium, Sc) and p-type ohmic contact (palladium, Pd) at the two ends of the diode. We show that normal BFBD devices have large variances of forward current, reverse current, and photocurrent for different doping levels of the channel. We propose an asymmetric Y2O3-coated BFBD device in which the channel is covered by a layer of an Y2O3 film and an overlap between the Sc electrode and the Y2O3 film is designed. The Y2O3 film provides p-type doping to the channel. The overlap section increases the length of the base of the pn junction, and the diffusion current of holes is suppressed. In this way, the rectifier factors (current ratio when voltages are at +0.5 V and -0.5 V) of the asymmetric Y2O3-coated BFBD devices are around two orders of magnitude larger and the photocurrent generation is more stable compared to that of normal devices. Our results provide a way to conquer the influence of unintentional doping from the environment and suppress reverse current in pn diodes. This is beneficial to applications of CNT-based photodetectors and of importance for inspiring methods to improve the performances of devices based on other low dimensional materials.
Inhibition of Zero Drift in Perovskite-Based Photodetector Devices via [6,6]-Phenyl-C61-butyric Acid Methyl Ester Doping.

PubMed

Liu, Yintao; Jia, Renxu; Wang, Yucheng; Hu, Ziyang; Zhang, Yuming; Pang, Tiqiang; Zhu, Yuejin; Luan, Suzhen

2017-05-10

Zero drift can severely deteriorate the stability of the light-dark current ratio, detectivity, and responsivity of photodetectors. In this paper, the effects of a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-doped perovskite-based photodetector device on the inhibition of zero drift under dark state are discussed. Two kinds of photodetectors (Au/CH 3 NH 3 PbI x Cl 3-x /Au and Au/CH 3 NH 3 PbI x Cl 3-x :PCBM/Au) were prepared, and the materials and photodetector devices were measured by scanning electron microscopy, X-ray diffraction, photoluminescence, ultraviolet absorption spectra, and current-voltage and current-time measurements. It was found that similar merit parameters, including light-dark current ratio (∼10 2 ), detectivity (∼10 11 Jones), and responsivity were obtained for these two kinds of photodetectors. However, the drift of Au/CH 3 NH 3 PbI x Cl 3-x :PCBM/Au devices is negligible, while a drift of ∼0.2 V exists in Au/CH 3 NH 3 PbI x Cl 3-x /Au devices. A new model is proposed based on the hindering theory of ion (vacancy) migration, and it is believed that the dopant PCBM can hinder the ion (vacancy) migration of perovskite materials to suppress the phenomenon of zero drift in perovskite-based photodetectors.
High-Performance Near-Infrared Photodetectors Based on p-type SnX (X=S, Se) Nanowires Grown via Chemical Vapor Deposition.

PubMed

Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C; Liao, Lei; Hu, Weida

2018-06-21

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the N-type NW channel. Here, we successfully synthesized P-type SnSe and SnS NWs via chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit the impressive photodetection performance with the high photoconductive gain of 1.5 × 10 4 (2.8 × 10 4 ), good responsivity of 1.0× 10 4 A W -1 (1.6× 10 4 A W -1 ) as well as excellent detectivity of 3.3 × 10 12 Jones (2.4 × 10 12 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the P-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.
Spatial Light Modulators as Optical Crossbar Switches

NASA Technical Reports Server (NTRS)

Juday, Richard

2003-01-01

A proposed method of implementing cross connections in an optical communication network is based on the use of a spatial light modulator (SLM) to form controlled diffraction patterns that connect inputs (light sources) and outputs (light sinks). Sources would typically include optical fibers and/or light-emitting diodes; sinks would typically include optical fibers and/or photodetectors. The sources and/or sinks could be distributed in two dimensions; that is, on planes. Alternatively or in addition, sources and/or sinks could be distributed in three dimensions -- for example, on curved surfaces or in more complex (including random) three-dimensional patterns.
Resonant photodetector for cavity- and phase-locking of squeezed state generation.

PubMed

Chen, Chaoyong; Li, Zhixiu; Jin, Xiaoli; Zheng, Yaohui

2016-10-01

Based on the requirement of squeezed state generation, we build the phase relationship between two electronic local oscillators for the cavity- and phase-locking branches, and a 2-way 90° power splitter is adopted to satisfy the phase relationship simultaneously, which greatly simplifies the experimental setup and adjusting process. A LC parallel resonant circuit, which is composed by the inherent capacitance of a photodiode and an extra inductor, is adopted in the resonant photodetector to improve the gain factor at the expected frequency. The gain of the resonant photodetector is about 30 dB higher than that of the broadband photodetector at the resonant frequency. The peak-to-peak value of the error signal for cavity-locking (phase-locking) with the resonant photodetector is 240 (260) times of that with the broadband photodetector, which can improve the locking performance on the premise of not affecting the squeezing degree.
Hand-Held Color Meters Based on Interference Filters

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Fleurial, Jean-Pierre; Caillat, Thierry; Chen, Gang; Yang, Rong Gui

2004-01-01

Small, inexpensive, hand-held optoelectronic color-measuring devices based on metal-film/dielectric-film interference filters are undergoing development. These color meters could be suitable for use in a variety of applications in which there are requirements to quantify or match colors for aesthetic purposes but there is no need for the high spectral resolution of scientific-grade spectrometers. Such applications typically occur in the paint, printing, and cosmetic industries, for example. The figure schematically depicts a color meter of this type being used to measure the color of a sample in terms of the spectrum of light reflected from the sample. Light from a white source (for example, a white light-emitting diode) passes through a collimating lens to the sample. Another lens collects some of the light reflected from the sample and focuses the light onto the input end of optical fiber. Light emerging from the output end of the optical fiber illuminates an array of photodetectors covered with metal/dielectric-film interference filters like those described in Metal/Dielectric-film Interference Color Filters (NPO-20217), NASA Tech Briefs, Vol. 23, No. 2 (February 1999), page 70. Typically, these are wide-band-pass filters, as shown at the bottom of the figure. The photodetector array need not be of any particular design: it could be something as simple as an assembly containing several photodiodes or something as elaborate as an active-pixel sensor or other imaging device. What is essential is that each of the photodetectors or each of several groups of photodetectors is covered with a metal/dielectric-film filter of a different color. In most applications, it would be desirable to have at least three different filters, each for a spectral band that contains one of the three primary additive red, green, and blue colors. In some applications, it may be necessary to have more than three different color filters in order to characterize subtle differences in color (or in the sensation of color) that cannot be characterized with sufficient precision by use of the primary colors alone.
Three dimensional stress vector sensor array and method therefor

DOEpatents

Pfeifer, Kent Bryant; Rudnick, Thomas Jeffery

2005-07-05

A sensor array is configured based upon capacitive sensor techniques to measure stresses at various positions in a sheet simultaneously and allow a stress map to be obtained in near real-time. The device consists of single capacitive elements applied in a one or two dimensional array to measure the distribution of stresses across a mat surface in real-time as a function of position for manufacturing and test applications. In-plane and normal stresses in rolling bodies such as tires may thus be monitored.
Two-dimensional beam steering array using planar eight-element composite right/left-handed leaky-wave antennas

NASA Astrophysics Data System (ADS)

Sanada, Atsushi

2008-08-01

A two-dimensional beam steering array composed of an eight-element antenna array using composite right/left-handed leaky-wave antennas fed by an 8 × 8 Butler matrix network is designed at X-band. An eight-way beam switching in one direction by input port switching and a continuous beam steering in the other direction by frequency sweep are achieved. A wide range beam steering operation covering from -55 to +53 degrees by port switching and from -37 to +27 degrees by frequency sweep is demonstrated with the maximum gain of 9.2 dBi.
Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification

NASA Astrophysics Data System (ADS)

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.
Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification.

PubMed

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.
Voltage tunable two-color superlattice infrared photodetectors

NASA Astrophysics Data System (ADS)

Majumdar, Amlan; Choi, Kwong-Kit; Reno, John L.; Tsui, Daniel C.

2004-11-01

We present the design and fabrication of voltage tunable two-color superlattice infrared photodetectors (SLIPs), where the detection wavelength switches from the long-wavelength infrared (LWIR) range to the mid-wavelength infrared (MWIR) range upon reversing the polarity of applied bias. The photoactive region of these detectors contains multiple periods of two distinct short-period SLs that are designed for MWIR and LWIR detection. The voltage tunable operation is achieved by using two types of thick blocking barriers between adjacent SLs - undoped barriers on one side for low energy electrons and heavily-doped layers on the other side for high energy electrons. We grew two SLIP structures by molecular beam epitaxy. The first one consists of two AlGaAs/GaAs SLs with the detection range switching from the 7-11 μm band to the 4-7 μm range on reversing the bias polarity. The background-limited temperature is 55 and 80 K for LWIR and MWIR detection, respectively. The second structure comprises of strained InGaAs/GaAs/AlGaAs SLs and AlGaAs/GaAs SLs. The detection range of this SLIP changes from the 8-12 μm band to the 3-5 μm band on switching the bias polarity. The background-limited temperature is 70 and 110 K for LWIR and MWIR detection, respectively. This SLIP is the first ever voltage tunable MWIR/LWIR detector with performance comparable to those of one-color quantum-well infrared detectors designed for the respective wavelength ranges. We also demonstrate that the corrugated light coupling scheme, which enables normal-incidence absorption, is suitable for the two-color SLIPs. Since these SLIPs are two-terminal devices, they can be used with the corrugated geometry for the production of low-cost large-area two-color focal plane arrays.
Generation of dark hollow beam via coherent combination based on adaptive optics.

PubMed

Zheng, Yi; Wang, Xiaohua; Shen, Feng; Li, Xinyang

2010-12-20

A novel method for generating a dark hollow beam (DHB) is proposed and studied both theoretically and experimentally. A coherent combination technique for laser arrays is implemented based on adaptive optics (AO). A beam arraying structure and an active segmented mirror are designed and described. Piston errors are extracted by a zero-order interference detection system with the help of a custom-made photo-detectors array. An algorithm called the extremum approach is adopted to calculate feedback control signals. A dynamic piston error is imported by LiNbO₃ to test the capability of the AO servo. In a closed loop the stable and clear DHB is obtained. The experimental results confirm the feasibility of the concept.
Optical Links and RF Distribution for Antenna Arrays

NASA Technical Reports Server (NTRS)

Huang, Shouhua; Calhoun, Malcolm; Tjoelker, Robert

2006-01-01

An array of three antennas has recently been developed at the NASA Jet Propulsion Laboratory capable of detecting signals at X and Ka band. The array requires a common frequency reference and high precision phase alignment to correlate received signals. Frequency and timing references are presently provided from a remotely located hydrogen maser and clock through a combination of commercially and custom developed optical links. The selected laser, photodetector, and fiber components have been tested under anticipated thermal and simulated antenna rotation conditions. The resulting stability limitations due to thermal perturbations or induced stress on the optical fiber have been characterized. Distribution of the X band local oscillator includes a loop back and precision phase monitor to enable correlation of signals received from each antenna.
Three-Dimensional Waveguide Arrays for Coupling Between Fiber-Optic Connectors and Surface-Mounted Optoelectronic Devices

NASA Astrophysics Data System (ADS)

Hiramatsu, Seiki; Kinoshita, Masao

2005-09-01

This paper describes the fabrication of novel surface-mountable waveguide connectors and presents test results for them. To ensure more highly integrated and low-cost fabrication, we propose new three-dimensional (3-D) waveguide arrays that feature two-dimensionally integrated optical inputs/outputs and optical path redirection. A wafer-level stack and lamination process was used to fabricate the waveguide arrays. Vertical-cavity surface-emitting lasers (VCSELs) and photodiodes were directly mounted on the arrays and combined with mechanical transferable ferrule using active alignment. With the help of a flip-chip bonder, the waveguide connectors were mounted on a printed circuit board by solder bumps. Using mechanical transferable connectors, which can easily plug into the waveguide connectors, we obtained multi-gigabits-per-second transmission performance.
Cooperative single-photon subradiant states in a three-dimensional atomic array

NASA Astrophysics Data System (ADS)

Jen, H. H.

2016-11-01

We propose a complete superradiant and subradiant states that can be manipulated and prepared in a three-dimensional atomic array. These subradiant states can be realized by absorbing a single photon and imprinting the spatially-dependent phases on the atomic system. We find that the collective decay rates and associated cooperative Lamb shifts are highly dependent on the phases we manage to imprint, and the subradiant state of long lifetime can be found for various lattice spacings and atom numbers. We also investigate both optically thin and thick atomic arrays, which can serve for systematic studies of super- and sub-radiance. Our proposal offers an alternative scheme for quantum memory of light in a three-dimensional array of two-level atoms, which is applicable and potentially advantageous in quantum information processing.
Refractive index sensing in the visible/NIR spectrum using silicon nanopillar arrays.

PubMed

Visser, D; Choudhury, B Dev; Krasovska, I; Anand, S

2017-05-29

Si nanopillar (NP) arrays are investigated as refractive index sensors in the visible/NIR wavelength range, suitable for Si photodetector responsivity. The NP arrays are fabricated by nanoimprint lithography and dry etching, and coated with thin dielectric layers. The reflectivity peaks obtained by finite-difference time-domain (FDTD) simulations show a linear shift with coating layer thickness. At 730 nm wavelength, sensitivities of ~0.3 and ~0.9 nm/nm of SiO 2 and Si 3 N 4 , respectively, are obtained; and the optical thicknesses of the deposited surface coatings are determined by comparing the experimental and simulated data. The results show that NP arrays can be used for sensing surface bio-layers. The proposed method could be useful to determine the optical thickness of surface coatings, conformal and non-conformal, in NP-based optical devices.

Arrays of individually controlled ions suitable for two-dimensional quantum simulations

PubMed Central

Mielenz, Manuel; Kalis, Henning; Wittemer, Matthias; Hakelberg, Frederick; Warring, Ulrich; Schmied, Roman; Blain, Matthew; Maunz, Peter; Moehring, David L.; Leibfried, Dietrich; Schaetz, Tobias

2016-01-01

A precisely controlled quantum system may reveal a fundamental understanding of another, less accessible system of interest. A universal quantum computer is currently out of reach, but an analogue quantum simulator that makes relevant observables, interactions and states of a quantum model accessible could permit insight into complex dynamics. Several platforms have been suggested and proof-of-principle experiments have been conducted. Here, we operate two-dimensional arrays of three trapped ions in individually controlled harmonic wells forming equilateral triangles with side lengths 40 and 80 μm. In our approach, which is scalable to arbitrary two-dimensional lattices, we demonstrate individual control of the electronic and motional degrees of freedom, preparation of a fiducial initial state with ion motion close to the ground state, as well as a tuning of couplings between ions within experimental sequences. Our work paves the way towards a quantum simulator of two-dimensional systems designed at will. PMID:27291425
1024x1024 Pixel MWIR and LWIR QWIP Focal Plane Arrays and 320x256 MWIR:LWIR Pixel Colocated Simultaneous Dualband QWIP Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Liu, John K.; Hill, Cory J.; Rafol, S. B.; Mumolo, Jason M.; Trinh, Joseph T.; Tidrow, M. Z.; Le Van, P. D.

2005-01-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NE(Delta)T) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NE(Delta)T of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating-temperatures respectively, with similar optical and background conditions. In addition, we are in the process of developing MWIR and LWIR pixel collocated simultaneously readable dualband QWIP focal plane arrays.
Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays.

PubMed

Marín, A García; Núñez, C García; Rodríguez, P; Shen, G; Kim, S M; Kung, P; Piqueras, J; Pau, J L

2015-03-20

Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W(-1) below 390 nm under both modes, as well as, time responses of a few seconds.
Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays

NASA Astrophysics Data System (ADS)

García Marín, A.; García Núñez, C.; Rodríguez, P.; Shen, G.; Kim, S. M.; Kung, P.; Piqueras, J.; Pau, J. L.

2015-03-01

Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W-1 below 390 nm under both modes, as well as, time responses of a few seconds.
Cooperative resonances in light scattering from two-dimensional atomic arrays

NASA Astrophysics Data System (ADS)

Shahmoon, Ephraim; Wild, Dominik; Lukin, Mikhail; Yelin, Susanne

2017-04-01

We consider light scattering off a two-dimensional (2D) dipolar array and show how it can be tailored by properly choosing the lattice constant of the order of the incident wavelength. In particular, we demonstrate that such arrays can shape the emission pattern from an individual quantum emitter into a well-defined, collimated beam, and operate as a nearly perfect mirror for a wide range of incident angles and frequencies. These results can be understood in terms of the cooperative resonances of the surface modes supported by the 2D array. Experimental realizations are discussed, using ultracold arrays of trapped atoms and excitons in 2D semiconductor materials, as well as potential applications ranging from atomically thin metasurfaces to single photon nonlinear optics and nanomechanics. We acknowledge the financial support of the NSF and the MIT-Harvard Center for Ultracold Atoms.
Channel microband electrode arrays for mechanistic electrochemistry. Two-dimensional voltammetry: transport-limited currents.

PubMed

Alden, J A; Feldman, M A; Hill, E; Prieto, F; Oyama, M; Coles, B A; Compton, R G; Dobson, P J; Leigh, P A

1998-05-01

A channel electrode array, with electrodes ranging in size from the millimeter to the submicrometer scale, is used for the amperometric interrogation of mechanistically complex electrode processes. In this way, the transport-limited current, measured as a function of both electrode size and electrolyte flow rate (convection), is shown to provide a highly sensitive probe of mechanism and kinetics. The application of "two-dimensional voltammetry" to diverse electrode processes, including E, ECE, ECEE, EC', and DISP2 reactions, is reported.
Quantum-Well Infrared Photodetector (QWIP) Focal Plane Assembly

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Jhabvala, Christine A.; Ewin, Audrey J.; Hess, Larry A.; Hartmann, Thomas M.; La, Anh T.

2012-01-01

A paper describes the Thermal Infrared Sensor (TIRS), a QWIP-based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a far-infrared imager operating in the pushbroom mode with two IR channels: 10.8 and 12 microns. The focal plane will contain three 640x512 QWIP arrays mounted on a silicon substrate. The silicon substrate is a custom-fabricated carrier board with a single layer of aluminum interconnects. The general fabrication process starts with a 4-in. (approx.10-cm) diameter silicon wafer. The wafer is oxidized, a single substrate contact is etched, and aluminum is deposited, patterned, and alloyed. This technology development is aimed at incorporating three large-format infrared detecting arrays based on GaAs QWIP technology onto a common focal plane with precision alignment of all three arrays. This focal plane must survive the rigors of flight qualification and operate at a temperature of 43 K (-230 C) for five years while orbiting the Earth. The challenges presented include ensuring thermal compatibility among all the components, designing and building a compact, somewhat modular system and ensuring alignment to very tight levels. The multi-array focal plane integrated onto a single silicon substrate is a new application of both QWIP array development and silicon wafer scale integration. The Invar-based assembly has been tested to ensure thermal reliability.
Image Reconstruction in Radio Astronomy with Non-Coplanar Synthesis Arrays

NASA Astrophysics Data System (ADS)

Goodrick, L.

2015-03-01

Traditional radio astronomy imaging techniques assume that the interferometric array is coplanar, with a small field of view, and that the two-dimensional Fourier relationship between brightness and visibility remains valid, allowing the Fast Fourier Transform to be used. In practice, to acquire more accurate data, the non-coplanar baseline effects need to be incorporated, as small height variations in the array plane introduces the w spatial frequency component. This component adds an additional phase shift to the incoming signals. There are two approaches to account for the non-coplanar baseline effects: either the full three-dimensional brightness and visibility model can be used to reconstruct an image, or the non-coplanar effects can be removed, reducing the three dimensional relationship to that of the two-dimensional one. This thesis describes and implements the w-projection and w-stacking algorithms. The aim of these algorithms is to account for the phase error introduced by non-coplanar synthesis arrays configurations, making the recovered visibilities more true to the actual brightness distribution model. This is done by reducing the 3D visibilities to a 2D visibility model. The algorithms also have the added benefit of wide-field imaging, although w-stacking supports a wider field of view at the cost of more FFT bin support. For w-projection, the w-term is accounted for in the visibility domain by convolving it out of the problem with a convolution kernel, allowing the use of the two-dimensional Fast Fourier Transform. Similarly, the w-Stacking algorithm applies a phase correction in the image domain to image layers to produce an intensity model that accounts for the non-coplanar baseline effects. This project considers the KAT7 array for simulation and analysis of the limitations and advantages of both the algorithms. Additionally, a variant of the Högbom CLEAN algorithm was used which employs contour trimming for extended source emission flagging. The CLEAN algorithm is an iterative two-dimensional deconvolution method that can further improve image fidelity by removing the effects of the point spread function which can obscure source data.
The recent and prospective developments of cooled IR FPAs for double application at Electron NRI

NASA Astrophysics Data System (ADS)

Arutunov, V. A.; Vasilyev, I. S.; Ivanov, V. G.; Prokofyev, A. E.

2003-09-01

The recent and prospective developments of monolithic silicon IR-Schottky-barrier staring focal plane arrays (IR SB FPAs), photodetector assembly, and digital thermal imaging cameras (TICs) at Electron National Research Institute (Electron NRI) are considered. Basic parameters for IR SB FPAs with 256x256 and 512x512 pixels, and TICs based on these arrays are presented. The problems emerged while proceeding from the developments of IR SB FPAs for the wavelength range from 3 μm to 5 μm to the developments of those ones for xLWIR range are indicated (an abrupt increase in the level of background architecture). Possibility for further improvement in basic parameters of IR SB FPAs are discussed (a decrease in threshold signal power down to 0.5-1.0"1013 W/element with an increase in quantum efficiency, a decrease in output noise and proceeding to Schottky barriers of degenerated semiconductor/silicon heterojunction, and implementation of these array parameters in photodetector assembly with improved thermal background shielding taking into consideration an optical structure of TIC for concrete application). It is concluded that relative simplicity of the technology and expected low cost of monolithic silicon IR SB FPAs with basic parameters compared with hybrid IR FPAs for the wavelength ranges from 3 μm to 5 μm and from 8 μm to 12 μm maintain large monolithic IR SB FPAs as a basis for developments of double application digital TICs in the Russian Federation.
Fully "Eqwipped" to See the Heat

NASA Technical Reports Server (NTRS)

2002-01-01

Developed by NASA's Jet Propulsion Laboratory over the past decade with an excess of $15 million of government research and development investment, quantum well infrared photodetectors (QWIPs) are infrared imaging sensors that can operate in the long wavelength portion of the electromagnetic spectrum, where objects at an ambient temperature emit the most energy. QWIPTECH was formed in July 1998 to offer JPL's QWIPs in a commercial format. The company currently holds an exclusive worldwide license to manufacture and sell the infrared photodetector sensors as part of a focal plane array called a QWIP Chip(TM). The QWIP Chip provides high thermal sensitivity (0.001 C) and possesses a broad dynamic range, permitting precise observations over a wide range of temperatures. Since the technology uses heat rather than light, it can "see" in complete darkness and through conditions such as dust, smoke, and light fog.
Increasing sensitivity and angle-of-view of mid-wave infrared detectors by integration with dielectric microspheres

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, Kenneth W., E-mail: kenneth.allen@gtri.gatech.edu; Astratov, Vasily N., E-mail: astratov@uncc.edu; Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio 45433

2016-06-13

We observed up to 100 times enhancement of sensitivity of mid-wave infrared photodetectors in the 2–5 μm range by using photonic jets produced by sapphire, polystyrene, and soda-lime glass microspheres with diameters in the 90–300 μm range. By finite-difference time-domain (FDTD) method for modeling, we gain insight into the role of the microspheres refractive index, size, and alignment with respect to the detector mesa. A combination of enhanced sensitivity with angle-of-view (AOV) up to 20° is demonstrated for individual photodetectors. It is proposed that integration with microspheres can be scaled up for large focal plane arrays, which should provide maximal light collectionmore » efficiencies with wide AOVs, a combination of properties highly attractive for imaging applications.« less
A self-powered nano-photodetector based on PFH/ZnO nanorods organic/inorganic heterojunction

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Liu, Wei; Li, Peigang; Song, Jia; An, Yuehua; Shen, Jingqin; Wang, Shunli; Guo, Daoyou

2018-03-01

PFH/ZnO nanorods heterojunctions were fabricated by spin-coating p-type Poly (9,9-dihexylfluorene) (PFH) on n-type vertically aligned ZnO nanorod arrays grown by a facile hydrothermal method on indium tin oxide (ITO) transparent conductive glass. A typical p-n junction behavior was observed in the fabricated heterojunction. The current of heterojunction increases and decreases dramatically by switching the illumination on and off at zero bias, showing potential self-powered photodetector applications. The heterojunction were capable of generating negative current when illuminated under an appropriate wavelength. The photoresponse properties of the heterojunction can be tuned by the applied bias. In vacuum, the rectifying behavior disappeared, and show only simple semiconductor behavior. Band structure of the heterojunction was schematic drawn and explain the mechanism of the properties of PFH/ZnO nanorods heterojunctions.
Pixel-level plasmonic microcavity infrared photodetector

PubMed Central

Jing, You Liang; Li, Zhi Feng; Li, Qian; Chen, Xiao Shuang; Chen, Ping Ping; Wang, Han; Li, Meng Yao; Li, Ning; Lu, Wei

2016-01-01

Recently, plasmonics has been central to the manipulation of photons on the subwavelength scale, and superior infrared imagers have opened novel applications in many fields. Here, we demonstrate the first pixel-level plasmonic microcavity infrared photodetector with a single quantum well integrated between metal patches and a reflection layer. Greater than one order of magnitude enhancement of the peak responsivity has been observed. The significant improvement originates from the highly confined optical mode in the cavity, leading to a strong coupling between photons and the quantum well, resulting in the enhanced photo-electric conversion process. Such strong coupling from the localized surface plasmon mode inside the cavity is independent of incident angles, offering a unique solution to high-performance focal plane array devices. This demonstration paves the way for important infrared optoelectronic devices for sensing and imaging. PMID:27181111
Intelligent Front-end Electronics for Silicon photodetectors (IFES)

NASA Astrophysics Data System (ADS)

Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

2016-05-01

While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.
Recent developments in OLED-based chemical and biological sensors

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Zhou, Zhaoqun; Cai, Yuankun; Shinar, Ruth

2007-09-01

Recent developments in the structurally integrated OLED-based platform of luminescent chemical and biological sensors are reviewed. In this platform, an array of OLED pixels, which is structurally integrated with the sensing elements, is used as the photoluminescence (PL) excitation source. The structural integration is achieved by fabricating the OLED array and the sensing element on opposite sides of a common glass substrate or on two glass substrates that are attached back-to-back. As it does not require optical fibers, lens, or mirrors, it results in a uniquely simple, low-cost, and potentially rugged geometry. The recent developments on this platform include the following: (1) Enhancing the performance of gas-phase and dissolved oxygen sensors. This is achieved by (a) incorporating high-dielectric TiO II nanoparticles in the oxygen-sensitive Pt and Pd octaethylporphyrin (PtOEP and PdOEP, respectively)- doped polystyrene (PS) sensor films, and (b) embedding the oxygen-sensitive dyes in a matrix of polymer blends such as PS:polydimethylsiloxane (PDMS). (2) Developing sensor arrays for simultaneous detection of multiple serum analytes, including oxygen, glucose, lactate, and alcohol. The sensing element for each analyte consists of a PtOEP-doped PS oxygen sensor, and a solution containing the oxidase enzyme specific to the analyte. Each sensing element is coupled to two individually addressable OLED pixels and a Si photodiode photodetector (PD). (3) Enhancing the integration of the platform, whereby a PD array is also structurally integrated with the OLED array and sensing elements. This enhanced integration is achieved by fabricating an array of amorphous or nanocrystalline Si-based PDs, followed by fabrication of the OLED pixels in the gaps between these Si PDs.
1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

DTIC Science & Technology

2010-02-02

pf a- IGZO TFTs. IV. RF Characteristics of Room Temperature Deposited Indium Zinc Oxide Thin - Film Transistors Depletion-mode indium zinc...III. High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated On Polyethylene Terephthalate Substrates High-performance...amorphous (a-) InGaZnO-based thin film transistors (TFTs) were fabricated on flexible polyethylene terephthalate (PET) substrates coated with indium
Large Format Narrow-Band, Multi-Band, and Broad-Band LWIR QWIP Focal Planes for Space and Earth Science Applications

NASA Technical Reports Server (NTRS)

Gunapala, S. D.; Bandara, S. V.

2004-01-01

A 640x512 pixel, long-wavelength cutoff, narrow-band (delta(lambda)/approx. 10%) quantum well infrared photodetector (QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4-16 m spectral region, and a broad-band (delta(lambda)/approx. 42%) QWIP FPA having 15.4 m cutoff have been demonstrated.
Biochip microsystem for bioinformatics recognition and analysis

NASA Technical Reports Server (NTRS)

Lue, Jaw-Chyng (Inventor); Fang, Wai-Chi (Inventor)

2011-01-01

A system with applications in pattern recognition, or classification, of DNA assay samples. Because DNA reference and sample material in wells of an assay may be caused to fluoresce depending upon dye added to the material, the resulting light may be imaged onto an embodiment comprising an array of photodetectors and an adaptive neural network, with applications to DNA analysis. Other embodiments are described and claimed.
Large area ultraviolet photodetector on surface modified Si:GaN layers

NASA Astrophysics Data System (ADS)

Anitha, R.; R., Ramesh; Loganathan, R.; Vavilapalli, Durga Sankar; Baskar, K.; Singh, Shubra

2018-03-01

Unique features of semiconductor based heterostructured photoelectric devices have drawn considerable attention in the recent past. In the present work, large area UV photodetector has been fabricated utilizing interesting Zinc oxide microstructures on etched Si:GaN layers. The surface of Si:GaN layer grown by metal organic chemical vapor deposition method on sapphire has been modified by chemical etching to control the microstructure. The photodetector exhibits response to Ultraviolet light only. Optimum etching of Si:GaN was required to exhibit higher responsivity (0.96 A/W) and detectivity (∼4.87 × 109 Jones), the two important parameters for a photodetector. Present method offers a tunable functionality of photodetector through modification of top layer microstructure. A comparison with state of art materials has also been presented.
Laser electro-optic system for rapid three-dimensional /3-D/ topographic mapping of surfaces

NASA Technical Reports Server (NTRS)

Altschuler, M. D.; Altschuler, B. R.; Taboada, J.

1981-01-01

It is pointed out that the generic utility of a robot in a factory/assembly environment could be substantially enhanced by providing a vision capability to the robot. A standard videocamera for robot vision provides a two-dimensional image which contains insufficient information for a detailed three-dimensional reconstruction of an object. Approaches which supply the additional information needed for the three-dimensional mapping of objects with complex surface shapes are briefly considered and a description is presented of a laser-based system which can provide three-dimensional vision to a robot. The system consists of a laser beam array generator, an optical image recorder, and software for controlling the required operations. The projection of a laser beam array onto a surface produces a dot pattern image which is viewed from one or more suitable perspectives. Attention is given to the mathematical method employed, the space coding technique, the approaches used for obtaining the transformation parameters, the optics for laser beam array generation, the hardware for beam array coding, and aspects of image acquisition.

Directional ocean wave measurements in a coastal setting using a focused array imaging radar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frasier, S.J.; Liu, Y.; Moller, D.

1995-03-01

A unique focused array imaging Doppler radar was used to measure directional spectra of ocean surface waves in a nearshore experiment performed on the North Carolina Outer Banks. Radar images of the ocean surface`s Doppler velocity were used to generate two dimensional spectra of the radial component of the ocean surface velocity field. These are compared to simultaneous in-situ measurements made by a nearby array of submerged pressure sensors. Analysis of the resulting two-dimensional spectra include comparisons of dominant wave lengths, wave directions, and wave energy accounting for relative differences in water depth at the measurement locations. Limited estimates ofmore » the two-dimensional surface displacement spectrum are derived from the radar data. The radar measurements are analogous to those of interferometric synthetic aperture radars (INSAR), and the equivalent INSAR parameters are shown. The agreement between the remote and in-situ measurements suggests that an imaging Doppler radar is effective for these wave measurements at near grazing incidence angles.« less
Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions.

PubMed

Henning, Alex; Sangwan, Vinod K; Bergeron, Hadallia; Balla, Itamar; Sun, Zhiyuan; Hersam, Mark C; Lauhon, Lincoln J

2018-05-16

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS 2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS 2 isotype heterojunctions with p-Si/MoS 2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS 2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.
One- and two-dimensional antenna arrays for microwave wireless power transfer (MWPT) systems and dual-antenna transceivers

NASA Astrophysics Data System (ADS)

Lin, Yo-Sheng; Hu, Chun-Hao; Chang, Chi-Ho; Tsao, Ping-Chang

2018-06-01

In this work, we demonstrate novel one-dimensional (1D) and two-dimensional (2D) antenna arrays for both microwave wireless power transfer (MWPT) systems and dual-antenna transceivers. The antenna array can be used as the MWPT receiving antenna of an integrated MWPT and Bluetooth (BLE) communication module (MWPT-BLE module) for smart CNC (computer numerical control) spindle incorporated with the cloud computing system SkyMars. The 2D antenna array has n rows of 1 × m 1D array, and each array is composed of multiple (m) differential feeding antenna elements. Each differential feeding antenna element is a differential feeding structure with a microstrip antenna stripe. The stripe length is shorter than one wavelength to minimise the antenna area and to prevent being excited to a high-order mode. That is, the differential feeding antenna element can suppress the even mode. The mutual coupling between the antenna elements can be suppressed, and the isolation between the receiver and the transmitter can be enhanced. An inclination angle of the main beam aligns with the broadside, and the main beam is further concentrated and shrunk at the elevation direction. Moreover, if more differential feeding antenna elements are used, antenna gain and isolation can be further enhanced. The excellent performance of the proposed antenna arrays indicates that they are suitable for both MWPT systems and dual-antenna transceivers.
High Detectivity Graphene-Silicon Heterojunction Photodetector.

PubMed

Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

NASA Technical Reports Server (NTRS)

Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

1989-01-01

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.
Highly directional thermal emitter

DOEpatents

Ribaudo, Troy; Shaner, Eric A; Davids, Paul; Peters, David W

2015-03-24

A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (.about.64%) at large incidence angles.
Range imaging pulsed laser sensor with two-dimensional scanning of transmitted beam and scanless receiver using high-aspect avalanche photodiode array for eye-safe wavelength

NASA Astrophysics Data System (ADS)

Tsuji, Hidenobu; Imaki, Masaharu; Kotake, Nobuki; Hirai, Akihito; Nakaji, Masaharu; Kameyama, Shumpei

2017-03-01

We demonstrate a range imaging pulsed laser sensor with two-dimensional scanning of a transmitted beam and a scanless receiver using a high-aspect avalanche photodiode (APD) array for the eye-safe wavelength. The system achieves a high frame rate and long-range imaging with a relatively simple sensor configuration. We developed a high-aspect APD array for the wavelength of 1.5 μm, a receiver integrated circuit, and a range and intensity detector. By combining these devices, we realized 160×120 pixels range imaging with a frame rate of 8 Hz at a distance of about 50 m.
Synergism of Dewetting and Self-Wrinkling To Create Two-Dimensional Ordered Arrays of Functional Microspheres.

PubMed

Han, Xue; Hou, Jing; Xie, Jixun; Yin, Jian; Tong, Yi; Lu, Conghua; Möhwald, Helmuth

2016-06-29

Here we report a simple, novel, yet robust nonlithographic method for the controlled fabrication of two-dimensional (2-D) ordered arrays of polyethylene glycol (PEG) microspheres. It is based on the synergistic combination of two bottom-up processes enabling periodic structure formation for the first time: dewetting and the mechanical wrinkle formation. The deterministic dewetting results from the hydrophilic polymer PEG on an incompatible polystyrene (PS) film bound to a polydimethylsiloxane (PDMS) substrate, which is directed both by a wrinkled template and by the template-directed in-situ self-wrinkling PS/PDMS substrate. Two strategies have been introduced to achieve synergism to enhance the 2-D ordering, i.e., employing 2-D in-situ self-wrinkling substrates and boundary conditions. As a result, we achieve highly ordered 2-D arrays of PEG microspheres with desired self-organized microstructures, such as the array location (e.g., selectively on the crest/in the valley of the wrinkles), diameter, spacing of the microspheres, and array direction. Additionally, the coordination of PEG with HAuCl4 is utilized to fabricate 2-D ordered arrays of functional PEG-HAuCl4 composite microspheres, which are further converted into different Au nanoparticle arrays. This simple versatile combined strategy could be extended to fabricate highly ordered 2-D arrays of other functional materials and achieve desirable properties and functionalities.
Transferable ordered ni hollow sphere arrays induced by electrodeposition on colloidal monolayer.

PubMed

Duan, Guotao; Cai, Weiping; Li, Yue; Li, Zhigang; Cao, Bingqiang; Luo, Yuanyuan

2006-04-13

We report an electrochemical synthesis of two-dimensionally ordered porous Ni arrays based on polystyrene sphere (PS) colloidal monolayer. The morphology can be controlled from bowl-like to hollow sphere-like structure by changing deposition time under a constant current. Importantly, such ordered Ni arrays on a conducting substrate can be transferred integrally to any other desired substrates, especially onto an insulting substrate or curved surface. The magnetic measurements of the two-dimensional hollow sphere array show the coercivity values of 104 Oe for the applied field parallel to the film, and 87 Oe for the applied field perpendicular to the film, which is larger than those of bulk Ni and hollow Ni submicrometer-sized spheres. The formation of hollow sphere arrays is attributed to preferential nucleation on the interstitial sites between PS in the colloidal monolayer and substrate, and growth along PSs' surface. The transferability of the arrays originates from partial contact between the Ni hollow spheres and substrate. Such novel Ni ordered nanostructured arrays with transferability and high magnetic properties should be useful in applications such as data storage, catalysis, and magnetics.
The gamma-ray Cherenkov telescope for the Cherenkov telescope array

NASA Astrophysics Data System (ADS)

Tibaldo, L.; Abchiche, A.; Allan, D.; Amans, J.-P.; Armstrong, T. P.; Balzer, A.; Berge, D.; Boisson, C.; Bousquet, J.-J.; Brown, A. M.; Bryan, M.; Buchholtz, G.; Chadwick, P. M.; Costantini, H.; Cotter, G.; Daniel, M. K.; De Franco, A.; De Frondat, F.; Dournaux, J.-L.; Dumas, D.; Ernenwein, J.-P.; Fasola, G.; Funk, S.; Gironnet, J.; Graham, J. A.; Greenshaw, T.; Hervet, O.; Hidaka, N.; Hinton, J. A.; Huet, J.-M.; Jankowsky, D.; Jegouzo, I.; Jogler, T.; Kraus, M.; Lapington, J. S.; Laporte, P.; Lefaucheur, J.; Markoff, S.; Melse, T.; Mohrmann, L.; Molyneux, P.; Nolan, S. J.; Okumura, A.; Osborne, J. P.; Parsons, R. D.; Rosen, S.; Ross, D.; Rowell, G.; Rulten, C. B.; Sato, Y.; Sayède, F.; Schmoll, J.; Schoorlemmer, H.; Servillat, M.; Sol, H.; Stamatescu, V.; Stephan, M.; Stuik, R.; Sykes, J.; Tajima, H.; Thornhill, J.; Trichard, C.; Vink, J.; Watson, J. J.; White, R.; Yamane, N.; Zech, A.; Zink, A.; Zorn, J.; CTA Consortium

2017-01-01

The Cherenkov Telescope Array (CTA) is a forthcoming ground-based observatory for very-high-energy gamma rays. CTA will consist of two arrays of imaging atmospheric Cherenkov telescopes in the Northern and Southern hemispheres, and will combine telescopes of different types to achieve unprecedented performance and energy coverage. The Gamma-ray Cherenkov Telescope (GCT) is one of the small-sized telescopes proposed for CTA to explore the energy range from a few TeV to hundreds of TeV with a field of view ≳ 8° and angular resolution of a few arcminutes. The GCT design features dual-mirror Schwarzschild-Couder optics and a compact camera based on densely-pixelated photodetectors as well as custom electronics. In this contribution we provide an overview of the GCT project with focus on prototype development and testing that is currently ongoing. We present results obtained during the first on-telescope campaign in late 2015 at the Observatoire de Paris-Meudon, during which we recorded the first Cherenkov images from atmospheric showers with the GCT multi-anode photomultiplier camera prototype. We also discuss the development of a second GCT camera prototype with silicon photomultipliers as photosensors, and plans toward a contribution to the realisation of CTA.
Hybrid WSe2-In2O3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

PubMed

Guo, Nan; Gong, Fan; Liu, Junku; Jia, Yi; Zhao, Shaofan; Liao, Lei; Su, Meng; Fan, Zhiyong; Chen, Xiaoshuang; Lu, Wei; Xiao, Lin; Hu, Weida

2017-10-04

Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing low-dimensional phototransistors with high responsivity and low dark currents over broad-band spectra still remains a great challenge because of the trade-offs in the potential architectures. In this work, we report a hybrid phototransistor consisting of a single In 2 O 3 nanowire as the channel material and a multilayer WSe 2 nanosheet as the decorating sensitizer for photodetection. Our devices show high responsivities of 7.5 × 10 5 and 3.5 × 10 4 A W -1 and ultrahigh detectivities of 4.17 × 10 17 and 1.95 × 10 16 jones at the wavelengths of 637 and 940 nm, respectively. The superior detectivity of the hybrid architecture arises from the extremely low dark currents and the enhanced photogating effect in the depletion regime by the unique design of energy band alignment of the channel and sensitizer materials. Moreover, the visible to near-infrared absorption properties of the multilayer WSe 2 nanosheet favor a broad-band spectral response for the devices. Our results pave the way for developing ultrahigh-sensitivity photodetectors based on low-dimensional hybrid architectures.
Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Jian; Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Ye, Zhenhua

2014-05-14

An HgCdTe long-wavelength infrared focal plane array photodetector is proposed by modulating light distributions based on the photonic crystal. It is shown that a promising prospect of improving performance is better light harvest and dark current limitation. To optimize the photon field distributions of the HgCdTe-based photonic crystal structure, a numerical method is built by combining the finite-element modeling and the finite-difference time-domain simulation. The optical and electrical characteristics of designed HgCdTe mid-wavelength and long-wavelength photon-trapping infrared detector focal plane arrays are obtained numerically. The results indicate that the photon crystal structure, which is entirely compatible with the large infraredmore » focal plane arrays, can significantly reduce the dark current without degrading the quantum efficiency compared to the regular mesa or planar structure.« less
Generalized Self-Doping Engineering towards Ultrathin and Large-Sized Two-Dimensional Homologous Perovskites.

PubMed

Chen, Junnian; Wang, Yaguang; Gan, Lin; He, Yunbin; Li, Huiqiao; Zhai, Tianyou

2017-11-20

Two-dimensional (2D) homologous perovskites are arousing intense interest in photovoltaics and light-emitting fields, attributing to significantly improved stability and increasing optoelectronic performance. However, investigations on 2D homologous perovskites with ultrathin thickness and large lateral dimension have been seldom reported, being mainly hindered by challenges in synthesis. A generalized self-doping directed synthesis of ultrathin 2D homologous (BA) 2 (MA) n-1 Pb n Br 3n+1 (1
Towards dualband megapixel QWIP focal plane arrays

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Mumolo, J. M.; Hill, C. J.; Rafol, S. B.; Salazar, D.; Woolaway, J.; LeVan, P. D.; Tidrow, M. Z.

2007-04-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 × 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024 × 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
Multicolor megapixel QWIP focal plane arrays for remote sensing instruments

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Hill, C. J.; Rafol, S. B.; Mumolo, J. M.; Trinh, J. T.; Tidrow, M. Z.; LeVan, P. D.

2006-08-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
Fitting PMT Responses with an Artificial Neural Network

NASA Astrophysics Data System (ADS)

Kemmerer, William; Niculescu, Gabriel

2017-09-01

Correctly modeling the low light responce of photodetectors such as photomultiplier tubes (PMT) is crucial for the operation of particle detection relying on the Cherenkov effect. The Gas Ring Imaging Cherenkov (GRINCH) in the SuperBigBite Spectrometer (SBS) at Jefferson Lab will rely on an array of 510 29 mm 9125B PMTs. To select the tubes for this array, more than 900 were tested and their low-light response function was fitted. An Artificial Neural Network was defined and trained to extract the relevant PMT parameters without carrying out a detailed fir of the ADC spectrum. These results will be discussed here. NSF.
A novel depth-of-interaction block detector for positron emission tomography using a dichotomous orthogonal symmetry decoding concept.

PubMed

Zhang, Yuxuan; Yan, Han; Baghaei, Hossain; Wong, Wai-Hoi

2016-02-21

Conventionally, a dual-end depth-of-interaction (DOI) block detector readout requires two two-dimensional silicon photomultiplier (SiPM) arrays, one on top and one on the bottom, to define the XYZ positions. However, because both the top and bottom SiPM arrays are reading the same pixels, this creates information redundancy. We propose a dichotomous orthogonal symmetric (DOS) dual-end readout block detector design, which removes this redundancy by reducing the number of SiPMs and still achieves XY and DOI (Z) decoding for positron emission tomography (PET) block detector. Reflecting films are used within the block detector to channel photons going to the top of the block to go only in the X direction, and photons going to the bottom are channeled along the Y direction. Despite the unidirectional channeling on each end, the top readout provides both X and Y information using two one-dimensional SiPM arrays instead of a two-dimensional SiPM array; similarly, the bottom readout also provides both X and Y information with just two one-dimensional SiPM arrays. Thus, a total of four one-dimensional SiPM arrays (4 × N SiPMs) are used to decode the XYZ positions of the firing pixels instead of two two-dimensional SiPM arrays (2 × N × N SiPMs), reducing the number of SiPM arrays per block from 2N(2) to 4 N for PET/MR or PET/CT systems. Moreover, the SiPM arrays on one end can be replaced by two regular photomultiplier tubes (PMTs), so that a block needs only 2 N SiPMs + 2 half-PMTs; this hybrid-DOS DOI block detector can be used in PET/CT systems. Monte Carlo simulations were carried out to study the performance of our DOS DOI block detector design, including the XY-decoding quality, energy resolution, and DOI resolution. Both BGO and LSO scintillators were studied. We found that 4 mm pixels were well decoded for 5 × 5 BGO and 9 × 9 LSO arrays with 4 to 5 mm DOI resolution and 16-20% energy resolution. By adding light-channel decoding, we modified the DOS design to a high-resolution design, which resolved scintillator pixels smaller than the SiPM dimensions. Detector pixels of 2.4 mm were decoded for 8 × 8 BGO and 15 × 15 LSO arrays with 5 mm DOI resolution and 20-23% energy resolution. Time performance was also studied for the 8 × 8 BGO and 15 × 15 LSO HR-DOS arrays. The timing resolution for the corner and central crystals is 986 ± 122 ps and 1.89 ± 0.17 μs respectively with BGO, 137 ± 42 ps and 458 ± 67 ps respectively with LSO. Monte Carlo simulations with GATE/Geant4 demonstrated the feasibility of our DOS DOI block detector design. In conclusion, our novel design achieved good performance except the time performance while using fewer SiPMs and supporting electronic channels than the current non-DOI PET detectors. This novel design can significantly reduce the cost, heat, and readout complexity of DOI block detectors for PET/MR/CT systems that don't require the time-of-flight capability.
Diffraction mode terahertz tomography

DOEpatents

Ferguson, Bradley; Wang, Shaohong; Zhang, Xi-Cheng

2006-10-31

A method of obtaining a series of images of a three-dimensional object. The method includes the steps of transmitting pulsed terahertz (THz) radiation through the entire object from a plurality of angles, optically detecting changes in the transmitted THz radiation using pulsed laser radiation, and constructing a plurality of imaged slices of the three-dimensional object using the detected changes in the transmitted THz radiation. The THz radiation is transmitted through the object as a two-dimensional array of parallel rays. The optical detection is an array of detectors such as a CCD sensor.
Two-dimensional photonic crystal arrays for polymer:fullerene solar cells.

PubMed

Nam, Sungho; Han, Jiyoung; Do, Young Rag; Kim, Hwajeong; Yim, Sanggyu; Kim, Youngkyoo

2011-11-18

We report the application of two-dimensional (2D) photonic crystal (PC) array substrates for polymer:fullerene solar cells of which the active layer is made with blended films of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The 2D PC array substrates were fabricated by employing a nanosphere lithography technique. Two different hole depths (200 and 300 nm) were introduced for the 2D PC arrays to examine the hole depth effect on the light harvesting (trapping). The optical effect by the 2D PC arrays was investigated by the measurement of optical transmittance either in the direction normal to the substrate (direct transmittance) or in all directions (integrated transmittance). The results showed that the integrated transmittance was higher for the 2D PC array substrates than the conventional planar substrate at the wavelengths of ca. 400 nm, even though the direct transmittance of 2D PC array substrates was much lower over the entire visible light range. The short circuit current density (J(SC)) was higher for the device with the 2D PC array (200 nm hole depth) than the reference device. However, the device with the 2D PC array (300 nm hole depth) showed a slightly lower J(SC) value at a high light intensity in spite of its light harvesting effect proven at a lower light intensity.
Multi-dimensional spatial light communication made with on-chip InGaN photonic integration

NASA Astrophysics Data System (ADS)

Yang, Yongchao; Zhu, Bingcheng; Shi, Zheng; Wang, Jinyuan; Li, Xin; Gao, Xumin; Yuan, Jialei; Li, Yuanhang; Jiang, Yan; Wang, Yongjin

2017-04-01

Here, we propose, fabricate and characterize suspended photonic integration of InGaN multiple-quantum-well light-emitting diode (MQW-LED), waveguide and InGaN MQW-photodetector on a single chip. The unique light emission property of InGaN MQW-LED makes it feasible to establish multi-dimensional spatial data transmission using visible light. The in-plane light communication system is comprised of InGaN MQW-LED, waveguide and InGaN MQW-photodetector, and the out-of-plane data transmission is realized by detecting the free-space light emission via a commercial photodiode module. Moreover, a full-duplex light communication is experimentally demonstrated at a data transmission rate of 50 Mbps when both InGaN MQW-diodes operate under simultaneous light emission and detection mode. The in-plane superimposed signals are able to be extracted through the self-interference cancellation method, and the out-of-plane superimposed signals are in good agreement with the calculated signals according to the extracted transmitted signals. These results are promising for the development of on-chip InGaN photonic integration for diverse applications.

Design and implementation of an array of micro-electrochemical detectors for two-dimensional liquid chromatography--proof of principle.

PubMed

Abia, Jude A; Putnam, Joel; Mriziq, Khaled; Guiochon, Georges A

2010-03-05

Simultaneous two-dimensional liquid chromatography (2D-LC) is an implementation of two-dimensional liquid chromatography which has the potential to provide very fast, yet highly efficient separations. It is based on the use of time x space and space x space separation systems. The basic principle of this instrument has been validated long ago by the success of two-dimensional thin layer chromatography. The construction of a pressurized wide and flat column (100 mm x 100 mm x 1 mm) operated under an inlet pressure of up to 50 bar was described previously. However, to become a modern analytical method, simultaneous 2D-LC requires the development of detectors suitable for the monitoring of the composition of the eluent of this pressurized planar, wide column. An array of five equidistant micro-electrochemical sensors was built for this purpose and tested. Each sensor is a three-electrode system, with the working electrode being a 25 microm polished platinum micro-electrode. The auxiliary electrode is a thin platinum wire and the reference electrode an Ag/AgCl (3M sat. KCl) electrode. In this first implementation, proof of principle is demonstrated, but the final instrument will require a much larger array. 2010 Elsevier B.V. All rights reserved.
Magnetoresistance in two-dimensional array of Ge/Si quantum dots

NASA Astrophysics Data System (ADS)

Stepina, N. P.; Koptev, E. S.; Pogosov, A. G.; Dvurechenskii, A. V.; Nikiforov, A. I.; Zhdanov, E. Yu

2012-07-01

Magnetoresistance in two-dimensional array of Ge/Si was studied for a wide range of the conductance, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is similar for all samples; it is negative in weak fields and becomes positive with increasing of magnetic field. Negative magnetoresistance can be described in the frame of weak localization approach with suggestion that quantum interference contribution to the conductance is restricted not only by the phase breaking length but also by the localization length.
Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, Raymond J.; Benett, William J.; Mills, Steven T.

1997-01-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.
Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.
Structure and Growth Control of Organic-Inorganic Halide Perovskites for Optoelectronics: From Polycrystalline Films to Single Crystals.

PubMed

Chen, Yani; He, Minhong; Peng, Jiajun; Sun, Yong; Liang, Ziqi

2016-04-01

Recently, organic-inorganic halide perovskites have sparked tremendous research interest because of their ground-breaking photovoltaic performance. The crystallization process and crystal shape of perovskites have striking impacts on their optoelectronic properties. Polycrystalline films and single crystals are two main forms of perovskites. Currently, perovskite thin films have been under intensive investigation while studies of perovskite single crystals are just in their infancy. This review article is concentrated upon the control of perovskite structures and growth, which are intimately correlated for improvements of not only solar cells but also light-emitting diodes, lasers, and photodetectors. We begin with the survey of the film formation process of perovskites including deposition methods and morphological optimization avenues. Strategies such as the use of additives, thermal annealing, solvent annealing, atmospheric control, and solvent engineering have been successfully employed to yield high-quality perovskite films. Next, we turn to summarize the shape evolution of perovskites single crystals from three-dimensional large sized single crystals, two-dimensional nanoplates, one-dimensional nanowires, to zero-dimensional quantum dots. Siginificant functions of perovskites single crystals are highlighted, which benefit fundamental studies of intrinsic photophysics. Then, the growth mechanisms of the previously mentioned perovskite crystals are unveiled. Lastly, perspectives for structure and growth control of perovskites are outlined towards high-performance (opto)electronic devices.
Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation.

PubMed

Song, Xiufeng; Liu, Xuhai; Yu, Dejian; Huo, Chengxue; Ji, Jianping; Li, Xiaoming; Zhang, Shengli; Zou, Yousheng; Zhu, Gangyi; Wang, Yongjin; Wu, Mingzai; Xie, An; Zeng, Haibo

2018-01-24

Transition metal dichalcogenides (TMDs) are promising candidates for flexible optoelectronic devices because of their special structures and excellent properties, but the low optical absorption of the ultrathin layers greatly limits the generation of photocarriers and restricts the performance. Here, we integrate all-inorganic perovskite CsPbBr 3 nanosheets with MoS 2 atomic layers and take the advantage of the large absorption coefficient and high quantum efficiency of the perovskites, to achieve excellent performance of the TMD-based photodetectors. Significantly, the interfacial charge transfer from the CsPbBr 3 to the MoS 2 layer has been evidenced by the observed photoluminescence quenching and shortened decay time of the hybrid MoS 2 /CsPbBr 3 . Resultantly, such a hybrid MoS 2 /CsPbBr 3 photodetector exhibits a high photoresponsivity of 4.4 A/W, an external quantum efficiency of 302%, and a detectivity of 2.5 × 10 10 Jones because of the high efficient photoexcited carrier separation at the interface of MoS 2 and CsPbBr 3 . The photoresponsivity of this hybrid device presents an improvement of 3 orders of magnitude compared with that of a MoS 2 device without CsPbBr 3 . The response time of the device is also shortened from 65.2 to 0.72 ms after coupling with MoS 2 layers. The combination of the all-inorganic perovskite layer with high photon absorption and the carrier transport TMD layer may pave the way for novel high-performance optoelectronic devices.
Multi-channel infrared thermometer

DOEpatents

Ulrickson, Michael A.

1986-01-01

A device for measuring the two-dimensional temperature profile of a surface comprises imaging optics for generating an image of the light radiating from the surface; an infrared detector array having a plurality of detectors; and a light pipe array positioned between the imaging optics and the detector array for sampling, transmitting, and distributing the image over the detector surfaces. The light pipe array includes one light pipe for each detector in the detector array.
Demonstration of a Bias Tunable Quantum Dots-in-a-Well Focal Plane Array

DTIC Science & Technology

2009-01-01

uniformity and mea- sured noise equivalent temperature difference for the double DWELL devices is computed and compared to the same results from the original...first generation DWELL. Finally, higher temperature operation is explored. Overall, the double DWELL devices had lower noise equivalent temperature...infrared photodetectors ( QWIPs ) with various doping and impurities have produced FPAs capable of detection across much of the infrared spectrum from
Dual light field and polarization imaging using CMOS diffractive image sensors.

PubMed

Jayasuriya, Suren; Sivaramakrishnan, Sriram; Chuang, Ellen; Guruaribam, Debashree; Wang, Albert; Molnar, Alyosha

2015-05-15

In this Letter we present, to the best of our knowledge, the first integrated CMOS image sensor that can simultaneously perform light field and polarization imaging without the use of external filters or additional optical elements. Previous work has shown how photodetectors with two stacks of integrated metal gratings above them (called angle sensitive pixels) diffract light in a Talbot pattern to capture four-dimensional light fields. We show, in addition to diffractive imaging, that these gratings polarize incoming light and characterize the response of these sensors to polarization and incidence angle. Finally, we show two applications of polarization imaging: imaging stress-induced birefringence and identifying specular reflections in scenes to improve light field algorithms for these scenes.
Broadband pump-probe spectroscopy at 20-MHz modulation frequency.

PubMed

Preda, Fabrizio; Kumar, Vikas; Crisafi, Francesco; Figueroa Del Valle, Diana Gisell; Cerullo, Giulio; Polli, Dario

2016-07-01

We introduce an innovative high-sensitivity broadband pump-probe spectroscopy system, based on Fourier-transform detection, operating at 20-MHz modulation frequency. A common-mode interferometer employing birefringent wedges creates two phase-locked delayed replicas of the broadband probe pulse, interfering at a single photodetector. A single-channel lock-in amplifier demodulates the interferogram, whose Fourier transform provides the differential transmission spectrum. Our approach combines broad spectral coverage with high sensitivity, due to high-frequency modulation and detection. We demonstrate its performances by measuring two-dimensional differential transmission maps of a carbon nanotubes sample, simultaneously acquiring the signal over the entire 950-1350 nm range with 2.7·10^-6 rms noise over 1.5 s integration time.
Quantum Well Infrared Photodetectors (QWIP)

NASA Technical Reports Server (NTRS)

Levine, B. F.

1990-01-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.
Frequency Up-Conversion Photon-Type Terahertz Imager.

PubMed

Fu, Z L; Gu, L L; Guo, X G; Tan, Z Y; Wan, W J; Zhou, T; Shao, D X; Zhang, R; Cao, J C

2016-05-05

Terahertz imaging has many important potential applications. Due to the failure of Si readout integrated circuits (ROICs) and the thermal mismatch between the photo-detector arrays and the ROICs at temperatures below 40 K, there are big technical challenges to construct terahertz photo-type focal plane arrays. In this work, we report pixel-less photo-type terahertz imagers based on the frequency up-conversion technique. The devices are composed of terahertz quantum-well photo-detectors (QWPs) and near-infrared (NIR) light emitting diodes (LEDs) which are grown in sequence on the same substrates using molecular beam epitaxy. In such an integrated QWP-LED device, photocurrent in the QWP drives the LED to emit NIR light. By optimizing the structural parameters of the QWP-LED, the QWP part and the LED part both work well. The maximum values of the internal and external energy up-conversion efficiencies are around 20% and 0.5%. A laser spot of a homemade terahertz quantum cascade laser is imaged by the QWP-LED together with a commercial Si camera. The pixel-less imaging results show that the image blurring induced by the transverse spreading of photocurrent is negligible. The demonstrated pixel-less imaging opens a new way to realize high performance terahertz imaging devices.
Quantum Well Infrared Photodetectors (QWIP)

NASA Astrophysics Data System (ADS)

Levine, B. F.

1990-07-01

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.
Frequency Up-Conversion Photon-Type Terahertz Imager

PubMed Central

Fu, Z. L.; Gu, L. L.; Guo, X. G.; Tan, Z. Y.; Wan, W. J.; Zhou, T.; Shao, D. X.; Zhang, R.; Cao, J. C.

2016-01-01

Terahertz imaging has many important potential applications. Due to the failure of Si readout integrated circuits (ROICs) and the thermal mismatch between the photo-detector arrays and the ROICs at temperatures below 40 K, there are big technical challenges to construct terahertz photo-type focal plane arrays. In this work, we report pixel-less photo-type terahertz imagers based on the frequency up-conversion technique. The devices are composed of terahertz quantum-well photo-detectors (QWPs) and near-infrared (NIR) light emitting diodes (LEDs) which are grown in sequence on the same substrates using molecular beam epitaxy. In such an integrated QWP-LED device, photocurrent in the QWP drives the LED to emit NIR light. By optimizing the structural parameters of the QWP-LED, the QWP part and the LED part both work well. The maximum values of the internal and external energy up-conversion efficiencies are around 20% and 0.5%. A laser spot of a homemade terahertz quantum cascade laser is imaged by the QWP-LED together with a commercial Si camera. The pixel-less imaging results show that the image blurring induced by the transverse spreading of photocurrent is negligible. The demonstrated pixel-less imaging opens a new way to realize high performance terahertz imaging devices. PMID:27147281
Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices

NASA Astrophysics Data System (ADS)

Huang, Chi-Hsien; Igarashi, Makoto; Woné, Michel; Uraoka, Yukiharu; Fuyuki, Takashi; Takeguchi, Masaki; Yamashita, Ichiro; Samukawa, Seiji

2009-04-01

A high-density, large-area, and uniform two-dimensional (2D) Si-nanodisk array was successfully fabricated using the bio-nano-process, advanced etching techniques, including a treatment using nitrogen trifluoride and hydrogen radical (NF3 treatment) and a damage-free chlorine neutral beam (NB). By using the surface oxide formed by neutral beam oxidation (NBO) for the preparation of a 2D nanometer-sized iron core array as an etching mask, a well-ordered 2D Si-nanodisk array was obtained owing to the dangling bonds of the surface oxide. By changing the NF3 treatment time without changing the quantum effect of each nanodisk, we could control the gap between adjacent nanodisks. A device with two electrodes was fabricated to investigate the electron transport in a 2D Si-nanodisk array. Current fluctuation and time-dependent currents were clearly observed owing to the charging-discharging of the nanodisks adjacent to the current percolation path. The new structure may have great potential for future novel quantum effect devices.
Two-Dimensional DOA and Polarization Estimation for a Mixture of Uncorrelated and Coherent Sources with Sparsely-Distributed Vector Sensor Array

PubMed Central

Si, Weijian; Zhao, Pinjiao; Qu, Zhiyu

2016-01-01

This paper presents an L-shaped sparsely-distributed vector sensor (SD-VS) array with four different antenna compositions. With the proposed SD-VS array, a novel two-dimensional (2-D) direction of arrival (DOA) and polarization estimation method is proposed to handle the scenario where uncorrelated and coherent sources coexist. The uncorrelated and coherent sources are separated based on the moduli of the eigenvalues. For the uncorrelated sources, coarse estimates are acquired by extracting the DOA information embedded in the steering vectors from estimated array response matrix of the uncorrelated sources, and they serve as coarse references to disambiguate fine estimates with cyclical ambiguity obtained from the spatial phase factors. For the coherent sources, four Hankel matrices are constructed, with which the coherent sources are resolved in a similar way as for the uncorrelated sources. The proposed SD-VS array requires only two collocated antennas for each vector sensor, thus the mutual coupling effects across the collocated antennas are reduced greatly. Moreover, the inter-sensor spacings are allowed beyond a half-wavelength, which results in an extended array aperture. Simulation results demonstrate the effectiveness and favorable performance of the proposed method. PMID:27258271
Indirect X-ray Detectors Based on Inkjet-Printed Photodetectors with a Screen-Printed Scintillator Layer.

PubMed

Oliveira, Juliana; Correia, Vitor; Sowade, Enrico; Etxebarria, Ikerne; Rodriguez, Raul D; Mitra, Kalyan Y; Baumann, Reinhard R; Lanceros-Mendez, Senentxu

2018-04-18

Organic photodetectors (PDs) based on printing technologies will allow to expand the current field of PD applications toward large-area and flexible applications in areas such as medical imaging, security, and quality control, among others. Inkjet printing is a powerful digital tool for the deposition of smart and functional materials on various substrates, allowing the development of electronic devices such as PDs on various substrates. In this work, inkjet-printed PD arrays, based on the organic thin-film transistor architecture, have been developed and applied for the indirect detection of X-ray radiation using a scintillator ink as an X-ray absorber. The >90% increase of the photocurrent of the PDs under X-ray radiation, from about 53 nA without the scintillator film to about 102 nA with the scintillator located on top of the PD, proves the suitability of the developed printed device for X-ray detection applications.
Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics.

PubMed

Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Kang, Zhan; Rogers, John A

2010-11-01

Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.
Development of Cryogenic Filter Wheels for the HERSCHEL Photodetector Array Camera & Spectrometer (PACS)

NASA Technical Reports Server (NTRS)

Koerner, Christian; Kampf, Dirk; Poglitsch, Albrecht; Schubert, Josef; Ruppert, U.; Schoele, M.

2014-01-01

This paper describes the two PACS Filter Wheels that are direct-drive rotational mechanisms operated at a temperature below 5K inside the PACS focal plane unit of the Herschel Satellite. The purpose of the mechanisms is to switch between filters. The rotation axis is pivoted to the support structure via a slightly preloaded pair of ball bearings and driven by a Cryotorquer. Position sensing is realized by a pair of Hall effect sensors. Powerless positioning at the filter positions is achieved by a magnetic ratchet system. The key technologies are the Cryotorquer design and the magnetic ratchet design in the low temperature range. Furthermore, we will report on lessons learned during the development and qualification of the mechanism and the paint.
Simulation fidelity of a virtual environment display

NASA Technical Reports Server (NTRS)

Nemire, Kenneth; Jacoby, Richard H.; Ellis, Stephen R.

1994-01-01

We assessed the degree to which a virtual environment system produced a faithful simulation of three-dimensional space by investigating the influence of a pitched optic array on the perception of gravity-referenced eye level (GREL). We compared the results with those obtained in a physical environment. In a within-subjects factorial design, 12 subjects indicated GREL while viewing virtual three-dimensional arrays at different static orientations. A physical array biased GREL more than did a geometrically identical virtual pitched array. However, addition of two sets of orthogonal parallel lines (a grid) to the virtual pitched array resulted in as large a bias as that obtained with the physical pitched array. The increased bias was caused by longitudinal, but not the transverse, components of the grid. We discuss implications of our results for spatial orientation models and for designs of virtual displays.

Two-Dimensional Ordering of Solute Nanoclusters at a Close-Packed Stacking Fault: Modeling and Experimental Analysis

PubMed Central

Kimizuka, Hajime; Kurokawa, Shu; Yamaguchi, Akihiro; Sakai, Akira; Ogata, Shigenobu

2014-01-01

Predicting the equilibrium ordered structures at internal interfaces, especially in the case of nanometer-scale chemical heterogeneities, is an ongoing challenge in materials science. In this study, we established an ab-initio coarse-grained modeling technique for describing the phase-like behavior of a close-packed stacking-fault-type interface containing solute nanoclusters, which undergo a two-dimensional disorder-order transition, depending on the temperature and composition. Notably, this approach can predict the two-dimensional medium-range ordering in the nanocluster arrays realized in Mg-based alloys, in a manner consistent with scanning tunneling microscopy-based measurements. We predicted that the repulsively interacting solute-cluster system undergoes a continuous evolution into a highly ordered densely packed morphology while maintaining a high degree of six-fold orientational order, which is attributable mainly to an entropic effect. The uncovered interaction-dependent ordering properties may be useful for the design of nanostructured materials utilizing the self-organization of two-dimensional nanocluster arrays in the close-packed interfaces. PMID:25471232
Arrays of individually controlled ions suitable for two-dimensional quantum simulations

DOE PAGES

Mielenz, Manuel; Kalis, Henning; Wittemer, Matthias; ...

2016-06-13

A precisely controlled quantum system may reveal a fundamental understanding of another, less accessible system of interest. A universal quantum computer is currently out of reach, but an analogue quantum simulator that makes relevant observables, interactions and states of a quantum model accessible could permit insight into complex dynamics. Several platforms have been suggested and proof-of-principle experiments have been conducted. Here, we operate two-dimensional arrays of three trapped ions in individually controlled harmonic wells forming equilateral triangles with side lengths 40 and 80 μm. In our approach, which is scalable to arbitrary two-dimensional lattices, we demonstrate individual control of themore » electronic and motional degrees of freedom, preparation of a fiducial initial state with ion motion close to the ground state, as well as a tuning of couplings between ions within experimental sequences. Lastly, our work paves the way towards a quantum simulator of two-dimensional systems designed at will.« less
Resonant tunneling of 1-dimensional electrons across an array of 3-dimensionally confined potential wells

NASA Astrophysics Data System (ADS)

Allee, D. R.; Chou, S. Y.; Harris, J. S.; Pease, R. F. W.

A lateral resonant tunneling field effect transistor has been fabricated with a gate electrode in the form of a railway such that the two rails form a lateral double barrier potential at the GaAs/AlGaAs interface. The ties confine the electrons in the third dimension forming an array of potential boxes or three dimensionally confined potential wells. The width of the ties and rails is 50nm; the spacings between the ties and between the two rails are 230nm and 150nm respectively. The ties are 750nm long and extend beyond the the two rails forming one dimensional wires on either side. Conductance oscillations are observed in the drain current at 4.2K as the gate voltage is scanned. Comparison with devices with a solid gate, and with a monorail gate with ties fabricated on the same wafer suggest that these conductance oscillations are electron resonant tunneling from one dimensional wires through the quasi-bound states of the three dimensionally confined potential wells. Comparison with a device with a two rail gate without ties (previously published) indicates that additional confinement due to the ties enhances the strength of the conductance oscillations.
Metrology Camera System Using Two-Color Interferometry

NASA Technical Reports Server (NTRS)

Dubovitsky, Serge; Liebe, Carl Christian; Peters, Robert; Lay, Oliver

2007-01-01

A metrology system that contains no moving parts simultaneously measures the bearings and ranges of multiple reflective targets in its vicinity, enabling determination of the three-dimensional (3D) positions of the targets with submillimeter accuracy. The system combines a direction-measuring metrology camera and an interferometric range-finding subsystem. Because the system is based partly on a prior instrument denoted the Modulation Sideband Technology for Absolute Ranging (MSTAR) sensor and because of its 3D capability, the system is denoted the MSTAR3D. Developed for use in measuring the shape (for the purpose of compensating for distortion) of large structures like radar antennas, it can also be used to measure positions of multiple targets in the course of conventional terrestrial surveying. A diagram of the system is shown in the figure. One of the targets is a reference target having a known, constant distance with respect to the system. The system comprises a laser for generating local and target beams at a carrier frequency; a frequency shifting unit to introduce a frequency shift offset between the target and local beams; a pair of high-speed modulators that apply modulation to the carrier frequency in the local and target beams to produce a series of modulation sidebands, the highspeed modulators having modulation frequencies of FL and FM; a target beam launcher that illuminates the targets with the target beam; optics and a multipixel photodetector; a local beam launcher that launches the local beam towards the multi-pixel photodetector; a mirror for projecting to the optics a portion of the target beam reflected from the targets, the optics being configured to focus the portion of the target beam at the multi-pixel photodetector; and a signal-processing unit connected to the photodetector. The portion of the target beam reflected from the targets produces spots on the multi-pixel photodetector corresponding to the targets, respectively, and the signal-processing unit centroids the spots to determine bearings of the targets, respectively. As the spots oscillate in intensity because they are mixed with the local laser beam that is flood illuminating the focal plane, the phase of oscillation of each spot is measured, the phase of sidebands in the oscillation of each spot being proportional to a distance to the corresponding target relative to the reference target A.
Thermal regulation of tightly packed solid-state photodetectors in a 1 mm3 resolution clinical PET system

PubMed Central

Vandenbroucke, A.; Innes, D.; Lau, F. W. Y.; Hsu, D. F. C.; Reynolds, P. D.; Levin, Craig S.

2015-01-01

Purpose: Silicon photodetectors are of significant interest for use in positron emission tomography (PET) systems due to their compact size, insensitivity to magnetic fields, and high quantum efficiency. However, one of their main disadvantages is fluctuations in temperature cause strong shifts in gain of the devices. PET system designs with high photodetector density suffer both increased thermal density and constrained options for thermally regulating the devices. This paper proposes a method of thermally regulating densely packed silicon photodetectors in the context of a 1 mm3 resolution, high-sensitivity PET camera dedicated to breast imaging. Methods: The PET camera under construction consists of 2304 units, each containing two 8 × 8 arrays of 1 mm3 LYSO crystals coupled to two position sensitive avalanche photodiodes (PSAPD). A subsection of the proposed camera with 512 PSAPDs has been constructed. The proposed thermal regulation design uses water-cooled heat sinks, thermoelectric elements, and thermistors to measure and regulate the temperature of the PSAPDs in a novel manner. Active cooling elements, placed at the edge of the detector stack due to limited access, are controlled based on collective leakage current and temperature measurements in order to keep all the PSAPDs at a consistent temperature. This thermal regulation design is characterized for the temperature profile across the camera and for the time required for cooling changes to propagate across the camera. These properties guide the implementation of a software-based, cascaded proportional-integral-derivative control loop that controls the current through the Peltier elements by monitoring thermistor temperature and leakage current. The stability of leakage current, temperature within the system using this control loop is tested over a period of 14 h. The energy resolution is then measured over a period of 8.66 h. Finally, the consistency of PSAPD gain between independent operations of the camera over 10 days is tested. Results: The PET camera maintains a temperature of 18.00 ± 0.05 °C over the course of 12 h while the ambient temperature varied 0.61 °C, from 22.83 to 23.44 °C. The 511 keV photopeak energy resolution over a period of 8.66 h is measured to be 11.3% FWHM with a maximum photopeak fluctuation of 4 keV. Between measurements of PSAPD gain separated by at least 2 day, the maximum photopeak shift was 6 keV. Conclusions: The proposed thermal regulation scheme for tightly packed silicon photodetectors provides for stable operation of the constructed subsection of a PET camera over long durations of time. The energy resolution of the system is not degraded despite shifts in ambient temperature and photodetector heat generation. The thermal regulation scheme also provides a consistent operating environment between separate runs of the camera over different days. Inter-run consistency allows for reuse of system calibration parameters from study to study, reducing the time required to calibrate the system and hence to obtain a reconstructed image. PMID:25563270
Thermal regulation of tightly packed solid-state photodetectors in a 1 mm{sup 3} resolution clinical PET system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Freese, D. L.; Vandenbroucke, A.; Innes, D.

2015-01-15

Purpose: Silicon photodetectors are of significant interest for use in positron emission tomography (PET) systems due to their compact size, insensitivity to magnetic fields, and high quantum efficiency. However, one of their main disadvantages is fluctuations in temperature cause strong shifts in gain of the devices. PET system designs with high photodetector density suffer both increased thermal density and constrained options for thermally regulating the devices. This paper proposes a method of thermally regulating densely packed silicon photodetectors in the context of a 1 mm{sup 3} resolution, high-sensitivity PET camera dedicated to breast imaging. Methods: The PET camera under constructionmore » consists of 2304 units, each containing two 8 × 8 arrays of 1 mm{sup 3} LYSO crystals coupled to two position sensitive avalanche photodiodes (PSAPD). A subsection of the proposed camera with 512 PSAPDs has been constructed. The proposed thermal regulation design uses water-cooled heat sinks, thermoelectric elements, and thermistors to measure and regulate the temperature of the PSAPDs in a novel manner. Active cooling elements, placed at the edge of the detector stack due to limited access, are controlled based on collective leakage current and temperature measurements in order to keep all the PSAPDs at a consistent temperature. This thermal regulation design is characterized for the temperature profile across the camera and for the time required for cooling changes to propagate across the camera. These properties guide the implementation of a software-based, cascaded proportional-integral-derivative control loop that controls the current through the Peltier elements by monitoring thermistor temperature and leakage current. The stability of leakage current, temperature within the system using this control loop is tested over a period of 14 h. The energy resolution is then measured over a period of 8.66 h. Finally, the consistency of PSAPD gain between independent operations of the camera over 10 days is tested. Results: The PET camera maintains a temperature of 18.00 ± 0.05 °C over the course of 12 h while the ambient temperature varied 0.61 °C, from 22.83 to 23.44 °C. The 511 keV photopeak energy resolution over a period of 8.66 h is measured to be 11.3% FWHM with a maximum photopeak fluctuation of 4 keV. Between measurements of PSAPD gain separated by at least 2 day, the maximum photopeak shift was 6 keV. Conclusions: The proposed thermal regulation scheme for tightly packed silicon photodetectors provides for stable operation of the constructed subsection of a PET camera over long durations of time. The energy resolution of the system is not degraded despite shifts in ambient temperature and photodetector heat generation. The thermal regulation scheme also provides a consistent operating environment between separate runs of the camera over different days. Inter-run consistency allows for reuse of system calibration parameters from study to study, reducing the time required to calibrate the system and hence to obtain a reconstructed image.« less
A small hemispherical helical antenna array for two-dimensional GPS beam-forming

NASA Astrophysics Data System (ADS)

Hui, H. T.; Aditya, S.; Mohamed, F. Bin S.; Hafiedz-Ul, A. Bin T.

2005-02-01

A small hemispherical helical antenna array with multibeam output for GPS beam-forming is designed and characterized. A Butler matrix beam-forming network is designed to provide four spatial beams in a two-dimensional directional space. The original design of the hemispherical helical antenna elements is modified in order to match it to the system impedance. Our study shows that even after an ˜30° scan from the normal direction, the maximum change in beam width is only 6°, the maximum change in axial ratio is 1.4 dB, and the maximum change in power gain is 1.1 dB. These characteristics indicate that the array can be potentially used for GPS beam-forming.
Controlling quasibound states in a one-dimensional continuum through an electromagnetically-induced-transparency mechanism

NASA Astrophysics Data System (ADS)

Gong, Z. R.; Ian, H.; Zhou, Lan; Sun, C. P.

2008-11-01

We study the coherent scattering process of a single photon confined in an one-dimensional (1D) coupled cavity-array, where a Λ -type three-level atom is placed inside one of the cavities in the array and behaves as a functional quantum node (FQN). We show that, through the electromagnetically-induced-transparency mechanism, the Λ -type FQN bears complete control over the reflection and transmission of the incident photon along the cavity array. We also demonstrate the emergence of a quasibound state of the single photon inside a secondary cavity constructed by two distant FQN’s as two end mirrors, from which we are motivated to design an all-optical single photon storage device of quantum coherence.
Electro-Optic Time-to-Space Converter for Optical Detector Jitter Mitigation

NASA Technical Reports Server (NTRS)

Birnbaum, Kevin; Farr, William

2013-01-01

A common problem in optical detection is determining the arrival time of a weak optical pulse that may comprise only one to a few photons. Currently, this problem is solved by using a photodetector to convert the optical signal to an electronic signal. The timing of the electrical signal is used to infer the timing of the optical pulse, but error is introduced by random delay between the absorption of the optical pulse and the creation of the electrical one. To eliminate this error, a time-to-space converter separates a sequence of optical pulses and sends them to different photodetectors, depending on their arrival time. The random delay, called jitter, is at least 20 picoseconds for the best detectors capable of detecting the weakest optical pulses, a single photon, and can be as great as 500 picoseconds. This limits the resolution with which the timing of the optical pulse can be measured. The time-to-space converter overcomes this limitation. Generally, the time-to-space converter imparts a time-dependent momentum shift to the incoming optical pulses, followed by an optical system that separates photons of different momenta. As an example, an electro-optic phase modulator can be used to apply longitudinal momentum changes (frequency changes) that vary in time, followed by an optical spectrometer (such as a diffraction grating), which separates photons with different momenta into different paths and directs them to impinge upon an array of photodetectors. The pulse arrival time is then inferred by measuring which photodetector receives the pulse. The use of a time-to-space converter mitigates detector jitter and improves the resolution with which the timing of an optical pulse is determined. Also, the application of the converter enables the demodulation of a pulse position modulated signal (PPM) at higher bandwidths than using previous photodetector technology. This allows the creation of a receiver for a communication system with high bandwidth and high bits/photon efficiency.
Spontaneous assembly of chemically encoded two-dimensional coacervate droplet arrays by acoustic wave patterning

PubMed Central

Tian, Liangfei; Martin, Nicolas; Bassindale, Philip G.; Patil, Avinash J.; Li, Mei; Barnes, Adrian; Drinkwater, Bruce W.; Mann, Stephen

2016-01-01

The spontaneous assembly of chemically encoded, molecularly crowded, water-rich micro-droplets into periodic defect-free two-dimensional arrays is achieved in aqueous media by a combination of an acoustic standing wave pressure field and in situ complex coacervation. Acoustically mediated coalescence of primary droplets generates single-droplet per node micro-arrays that exhibit variable surface-attachment properties, spontaneously uptake dyes, enzymes and particles, and display spatial and time-dependent fluorescence outputs when exposed to a reactant diffusion gradient. In addition, coacervate droplet arrays exhibiting dynamical behaviour and exchange of matter are prepared by inhibiting coalescence to produce acoustically trapped lattices of droplet clusters that display fast and reversible changes in shape and spatial configuration in direct response to modulations in the acoustic frequencies and fields. Our results offer a novel route to the design and construction of ‘water-in-water' micro-droplet arrays with controllable spatial organization, programmable signalling pathways and higher order collective behaviour. PMID:27708286
Interior and exterior sound field control using general two-dimensional first-order sources.

PubMed

Poletti, M A; Abhayapala, T D

2011-01-01

Reproduction of a given sound field interior to a circular loudspeaker array without producing an undesirable exterior sound field is an unsolved problem over a broadband of frequencies. At low frequencies, by implementing the Kirchhoff-Helmholtz integral using a circular discrete array of line-source loudspeakers, a sound field can be recreated within the array and produce no exterior sound field, provided that the loudspeakers have azimuthal polar responses with variable first-order responses which are a combination of a two-dimensional (2D) monopole and a radially oriented 2D dipole. This paper examines the performance of circular discrete arrays of line-source loudspeakers which also include a tangential dipole, providing general variable-directivity responses in azimuth. It is shown that at low frequencies, the tangential dipoles are not required, but that near and above the Nyquist frequency, the tangential dipoles can both improve the interior accuracy and reduce the exterior sound field. The additional dipoles extend the useful range of the array by around an octave.
A [111]-Cut Si Hemisphere Two-Photon Response Photodetector

NASA Astrophysics Data System (ADS)

Liu, Xiu-Huan; Chen, Zhan-Guo; Jia, Gang; Wang, Hai-Yan; Gao, Yan-Jun; Li, Yi

2011-11-01

Properties of two-photon response in a [111]-cut nearly-intrinsic Si hemisphere photodetector are studied. The measured photocurrent of the photodetector responding to the 1.32μm continuous wave laser shows a quadratic dependence on the coupled optical power and is saturated with the bias voltage. Also, the photocurrent is independent of polarization. Such properties are in good agreement with the theory of two-photon absorption. The isotropic photocurrent generated from the [111]-cut Si hemisphere is compared to the anisotropic one induced in the [110]-cut Si sample and the ratio of χxxxx/χxxyy for silicon performing at 1.32 μm is calculated to be 2.4 via the fitted function of the anisotropic photocurrent from the [110]-cut sample.
FIBER AND INTEGRATED OPTICS: Photodetector waveguide structures made of epitaxial InGaAs films and intended for integrated circuits manufactured from III-V semiconductor compounds

NASA Astrophysics Data System (ADS)

Shmal'ko, A. V.; Lamekin, V. F.; Smirnov, V. L.; Polyantsev, A. S.; Kogan, Yu I.; Babushkina, T. S.; Kuntsevich, T. S.; Peshkovskaya, O. G.

1990-08-01

Photodetector waveguide structures made of epitaxial InxGa1 - xAs solid-solution films were developed and investigated. These structures were intended for optical integrated circuits manufactured from III-V semiconductor compounds for operation in the wavelength range 1.0-1.5 μm. Two types of photodetector waveguide p-i-n structures were developed. They consisted of a composite waveguide and tunnel-coupled waveguides, respectively. A study was made of structural parameters, responsivity, spectral and time characteristics, and dark currents in photodetectors made of the waveguide structures. This investigation was carried out in the wavelength range 1.0-1.3 μm. The maximum spectral responsivity of one of the types of the waveguide photodetector was ~ 0.5 ± 0.1 A/W and the dark current did not exceed 10 - 7-10 - 8 A.
2D Semiconductors for Valley-Polarized LEDs and Photodetectors

NASA Astrophysics Data System (ADS)

Yu, Ting

The recently discovered two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers, have aroused great interest due to the underlying quantum physics and the appealing optoelectronic applications like atomically thin light-emitting diodes (LEDs) and photodetectors. On the one hand, valley-polarized electroluminescence and photocurrent from such monolayers have not caused enough attention but highly demanded as building blocks for the new generation valleytronic applications. On the other hand, most reports on these devices are based on the mechanically exfoliated small samples. Considering real applications, a strategy which could offer mass-product and high compatibility to the current planar processes is greatly demanded. Large-area samples prepared by chemical vapour deposition (CVD) are perfect candidates towards such a goal. Here, we report electrically tunable valley-polarized electroluminescence and the selective spin-valley-coupled photocurrent in optoelectronic devices based on monolayer WS2 and MoS2 grown by CVD, exhibiting large electroluminescence and photocurrent dichroisms of 81% and 60%, respectively. The controllable valley polarization and emission components of the electroluminescence have been realized by varying electrical injection of carriers. For the observed helicity-dependent photocurrent, the circular photogalvanic effect at resonant excitations has been found to take the dominant responsibility.
Polarization-independent absorption enhancement in a graphene square array with a cascaded grating structure.

PubMed

Wu, Jun

2018-03-01

The polarization-independent enhanced absorption effect of graphene in the near-infrared range is investigated. This is achieved by placing a graphene square array on top of a dielectric square array backed by a two-dimensional multilayer grating. Total optical absorption in graphene can be attributed to critical coupling, which is achieved through the combined effect of guided-mode resonance with the dielectric square array and the photonic band gap with the two-dimensional multilayer grating. To reveal the physical origin of such a phenomenon, the electromagnetic field distributions for both polarizations are illustrated. The designed graphene absorber exhibits near-unity polarization-independent absorption at resonance with an ultra-narrow spectrum. Moreover, the polarization-independent absorption can be tuned simply by changing the geometric parameters. The results may have promising potential for the design of graphene-based optoelectronic devices.
Positron source position sensing detector and electronics

DOEpatents

Burnham, Charles A.; Bradshaw, Jr., John F.; Kaufman, David E.; Chesler, David A.; Brownell, Gordon L.

1985-01-01

A positron source, position sensing device, particularly with medical applications, in which positron induced gamma radiation is detected using a ring of stacked, individual scintillation crystals, a plurality of photodetectors, separated from the scintillation crystals by a light guide, and high resolution position interpolation electronics. Preferably the scintillation crystals are several times more numerous than the photodetectors with each crystal being responsible for a single scintillation event from a received gamma ray. The light guide will disperse the light emitted from gamma ray absorption over several photodetectors. Processing electronics for the output of the photodetectors resolves the location of the scintillation event to a fraction of the dimension of each photodetector. Because each positron absorption results in two 180.degree. oppositely traveling gamma rays, the detection of scintillation in pairs permits location of the positron source in a manner useful for diagnostic purposes. The processing electronics simultaneously responds to the outputs of the photodetectors to locate the scintillations to the source crystal. While it is preferable that the scintillation crystal include a plurality of stacked crystal elements, the resolving power of the processing electronics is also applicable to continuous crystal scintillators.
Latest generation of ASICs for photodetector readout

NASA Astrophysics Data System (ADS)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.
Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Dong; Zhu, Xi; Li, Jian

2015-05-28

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arrangedmore » InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.« less
Far-Field to Near-Field Coupling for Enhancing Light-Matter Interaction

NASA Astrophysics Data System (ADS)

Bonakdar, Alireza

This thesis reports on theoretical, modeling, and experimental research within the framework of a key scientific question, which is enhancing the coupling between diffraction-limited far-field and sub-wavelength quantum emitter/absorber. A typical optoelectronic device delivers an optical process such as light detection (e.g. photodetector) or light intensity modulation (e.g. electro-absorptive modulator). In conventional devices, optical process is in the form of far-field or guided wave modes. The main aim of this thesis is to show that converting these modes into near-field domain can enhance the performance of the optoelectronic device. Light in the form of far-field can be converted into near-field domain by the optical antenna. Among different optoelectronic devices, this thesis focuses mainly on integrating the optical antenna with infrared photodetectors. The available semiconductors have weak infrared absorption that reduces light detection efficiency. Integration of the optical antenna with infrared absorber (such as quantum wells in quantum well infrared photodetector (QWIP)) increases the infrared absorption. Particularly this integration is favorable as the optical antenna has low metallic loss in infrared region. The author of this thesis believes that optical antenna has unique properties in confining light on the scale of deep sub-wavelength, enhancing electric field intensity and delivering optical energy to semiconductor absorbers. These properties are reaching into practical applications only if overall optical performance is low loss, parameter free (independent of optical parameters such a polarization and angle of incident) and broadband. In this thesis, the integration of optical antenna with infrared photodetectors and thermophotovoltaic are researched and developed which satisfy the aforementioned criteria. In addition, several different optical antennas have been designed, fabricated and characterized in order to analyze and demonstrate the improvement of infrared absorption. In terms of design, novel optical antennas were simulated and proposed for a variety of infrared photodetectors such as a quantum well infrared photodetector, metal-insulator-metal detector, Schottky infrared photodetector, and two-photon absorption infrared detector. Antenna analyzes are not limited to light detection as a chapter of this thesis devoted on design and develop of a low power and ultrafast all-optical/optomechanical switchable antenna. The rest of the manuscript contains the novel lithography method in order to fabricate optical antennas with low cost and in cm-scale area. The method is based on the microsphere photolithography that expose photoresist underneath each microsphere with a focused intensive light -so called photonic nanojet. The developed lithography method takes advantage of microscopic range of optical path (micro-optics) in microsphere lenses that allows to push the exposure wavelength beyond deep UV region, where the refractive optics becomes impractical due to severe material absorption. The author believes that micro-optics lithography is an excellent candidate for large area and high throughput fabrication of sub-100-nm feature sizes in periodic array. In particular, this method facilitates the feasibility of metasurfaces and metamaterials, optical coating with efficient photon extraction/trapping, and highly sensitive bio-sensors in near IR and visible ranges of spectrum.
Automated pupil remapping with binary optics

DOEpatents

Neal, Daniel R.; Mansell, Justin

1999-01-01

Methods and apparatuses for pupil remapping employing non-standard lenslet shapes in arrays; divergence of lenslet focal spots from on-axis arrangements; use of lenslet arrays to resize two-dimensional inputs to the array; and use of lenslet arrays to map an aperture shape to a different detector shape. Applications include wavefront sensing, astronomical applications, optical interconnects, keylocks, and other binary optics and diffractive optics applications.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics.

PubMed

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-10-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.
Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

PubMed Central

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-01-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297
Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

DOE PAGES

Wang, Gongming; Li, Dehui; Cheng, Hung -Chieh; ...

2015-10-02

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that themore » resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. Furthermore, the ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.« less
Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.
The "collimator monitoring fill factor" of a two-dimensional detector array, a measure of its ability to detect collimation errors.

PubMed

Stelljes, Tenzin Sonam; Looe, Hui Khee; Harder, Dietrich; Poppe, Björn

2017-03-01

Two-dimensional detector arrays are routinely used for constancy checks and treatment plan verification in photon-beam radiotherapy. In addition to the spatial resolution of the dose profiles, the "coverage" of the radiation field with respect to the detection of any beam collimation deficiency appears as the second characteristic feature of a detector array. The here proposed "collimator monitoring fill factor" (CM fill factor) has been conceived to serve as a quantitative characteristic of this "coverage". The CM fill factor is defined as the probability of a 2D array to detect any collimator position error. Therefore, it is represented by the ratio of the "sensitive area" of a single detector, in which collimator position errors are detectable, and the geometrical "cell area" associated with this detector within the array. Numerical values of the CM fill factor have been Monte Carlo simulated for 2D detector arrays equipped with air-vented ionization chambers, liquid-filled ionization chambers and diode detectors and were compared with the "FWHM fill factor" defined by Gago-Arias et al. (2012). For arrays with vented ionization chambers, the differences between the CM fill factor and the FWHM fill factor are moderate, but occasionally the latter exceeds unity. For narrower detectors such as liquid-filled ionization chambers and Si diodes and for small sampling distances, large differences between the FWHM fill factor and the CM fill factor have been observed. These differences can be explained by the shapes of the fluence response functions of these narrow detectors. A new parameter "collimator monitoring fill factor" (CM fill factor), applicable to quantitate the collimator position error detection probability of a 2D detector array, has been proposed. It is designed as a help in classifying the clinical performance of two-dimensional detector arrays in photon-beam radiotherapy. © 2017 American Association of Physicists in Medicine.
Two-dimensional array of cold-electron bolometers for high-sensitivity polarization measurements

NASA Astrophysics Data System (ADS)

Kuzmin, L. S.

2012-01-01

A new concept of a two-dimensional array of cold-electron bolometers with distributed dipole antennas in the focal plane for high-sensitivity polarization measurements is proposed. The concept gives a unique combination of high polarization resolution due to a large uniforms array of cold-electron bolometers and optimal matching with junction field effect transistor (JFET) amplifiers because of flexibility in direct-current connections. The noise characteristics are improved due to arriving-signal power distribution among numerous cold-electron bolometers and an increase in their response. This should lead to a significant increase in the sensitivity and dynamic range compared with competing alternative bolometer technologies. The reliability of the twodimensional array significantly increases due to a series-parallel connection of a large number of cold-electron bolometers. High polarization resolution should be ensured due to uniform covering of a substrate by a two-dimensional array over a large area and the absence of the beam compression to small lumped elements. The fundamental sensitivity limit of the cold-electron bolometer array is smaller than photon noise which is considered to be the ultimate level restricted by the background radiation. Estimates of noise of bolometers with the JFET reading system show the possibility of realizing the ultimate sensitivity below the photon-noise level 5 ・10-17 W/Hz1/2 at a frequency of 350 GHz for an optical load with a power of 5 pW. These parameters correspond to the requirements to the receiving system of a BOOMERanG balloon telescope.
High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, M. M.; State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, 130033 Changchun; Liu, K. W., E-mail: liukw@ciomp.ac.cn, E-mail: shendz@ciomp.ac.cn

High Mg content mixed-phase Zn{sub 0.38}Mg{sub 0.62}O was deposited on a-face sapphire by plasma-assisted molecular beam epitaxy, based on which a metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector was fabricated. The dark current is only 0.25 pA at 5 V, which is much lower than that of the reported mixed-phase ZnMgO photodetectors. More interestingly, different from the other mixed-phase ZnMgO photodetectors containing two photoresponse bands, this device shows only one response peak and its −3 dB cut-off wavelength is around 275 nm. At 10 V, the peak responsivity is as high as 1.664 A/W at 260 nm, corresponding to an internal gain of ∼8. The internal gain is mainlymore » ascribed to the interface states at the grain boundaries acting as trapping centers of photogenerated holes. In view of the advantages of mixed-phase ZnMgO photodetectors over single-phase ZnMgO photodetectors, including easy fabrication, high responsivity, and low dark current, our findings are anticipated to pave a new way for the development of ZnMgO solar-blind UV photodetectors.« less
Aluminum-based one- and two-dimensional micro fin array structures: high-throughput fabrication and heat transfer testing

NASA Astrophysics Data System (ADS)

Primeaux, Philip A.; Zhang, Bin; Zhang, Xiaoman; Miller, Jacob; Meng, W. J.; KC, Pratik; Moore, Arden L.

2017-02-01

Microscale fin array structures were replicated onto surfaces of aluminum 1100 and aluminum 6061 alloy (Al1100/Al6061) sheet metals through room-temperature instrumented roll molding. Aluminum-based micro fin arrays were replicated at room temperature, and the fabrication process is one with high throughput and low cost. One-dimensional (1D) micro fin arrays were made through one-pass rolling, while two-dimensional (2D) micro fin arrays were made by sequential 90° cross rolling with the same roller sleeve. For roll molding of 1D micro fins, fin heights greater than 600 µm were achieved and were shown to be proportional to the normal load force per feature width. At a given normal load force, the fin height was further shown to scale inversely with the hardness of the sheet metal. For sequential 90° cross rolling, morphologies of roll molded 2D micro fin arrays were examined, which provided clues to understand how plastic deformation occurred under cross rolling conditions. A series of pool boiling experiments on low profile Al micro fin array structures were performed within Novec 7100, a widely used commercial dielectric coolant. Results for both horizontal and vertical surface orientations show that roll molded Al micro fin arrays can increase heat flux at fixed surface temperature as compared to un-patterned Al sheet. The present results further suggest that many factors beyond just increased surface area can influence heat transfer performance, including surface finish and the important multiphase transport mechanisms in and around the fin geometry. These factors must also be considered when designing and optimizing micro fin array structures for heat transfer applications.
Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.
Liquid-crystal microlenses with patterned ring-electrode arrays for multiple-mode two-dimensional imaging

NASA Astrophysics Data System (ADS)

Xie, Xingwang; Han, Xinjie; Long, Huabao; Dai, Wanwan; Xin, Zhaowei; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

In this paper, a new liquid-crystal microlens array (LCMLA) with patterned ring-electrode arrays (PREAs) is investigated, which has an ability to acquire multiple-mode two-dimensional images with better electrically tunable efficiency than common liquid-crystal devices. The new type of LCMLA can be used to overcome several remarkable disadvantage of conventional liquid-crystal microlens arrays switched and adjusted electrically by relatively complex mechanism. There are two layer electrodes in the LCMLA developed by us. The top electrode layer consists of PREAs with different featured diameter but the same center for each single cell, and the bottom is a plate electrode. When both electrode structures are driven independently by variable AC voltage signal, a gradient electric field distribution could be obtained, which can drive liquid-crystal molecules to reorient themselves along the gradient electric field shaped, so as to demonstrate a satisfactory refractive index distribution. The common experiments are carried out to validate the performances needed. As shown, the focal length of the LCMLA can be adjusted continuously according to the variable voltage signal applied. According to designing, the LCMLA will be integrated continuously with an image sensors to set up a camera with desired performances. The test results indicate that our camera based on the LCMLA can obtain distinct multiple-mode two-dimensional images under the condition of using relatively low driving signal voltage.
Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

NASA Astrophysics Data System (ADS)

Murphy, Graham P.; Gough, John J.; Higgins, Luke J.; Karanikolas, Vasilios D.; Wilson, Keith M.; Garcia Coindreau, Jorge A.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Bradley, A. Louise

2017-03-01

Non-radiative energy transfer (NRET) can be an efficient process of benefit to many applications including photovoltaics, sensors, light emitting diodes and photodetectors. Combining the remarkable optical properties of quantum dots (QDs) with the electrical properties of quantum wells (QWs) allows for the formation of hybrid devices which can utilize NRET as a means of transferring absorbed optical energy from the QDs to the QW. Here we report on plasmon-enhanced NRET from semiconductor nanocrystal QDs to a QW. Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated NRET from QDs to QWs with varying top barrier thicknesses. Plasmon-mediated energy transfer (ET) efficiencies of up to ˜25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated ET is found to follow the same d -4 dependence as the direct QD to QW ET. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a Förster-like model with the Ag nanoparticle-QD acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated ET efficiencies up to ˜21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor QW emission to enhancement, as well as control of the competition between the QD donor quenching and ET rates.
Three-dimensional analysis of magnetometer array data

NASA Technical Reports Server (NTRS)

Richmond, A. D.; Baumjohann, W.

1984-01-01

A technique is developed for mapping magnetic variation fields in three dimensions using data from an array of magnetometers, based on the theory of optimal linear estimation. The technique is applied to data from the Scandinavian Magnetometer Array. Estimates of the spatial power spectra for the internal and external magnetic variations are derived, which in turn provide estimates of the spatial autocorrelation functions of the three magnetic variation components. Statistical errors involved in mapping the external and internal fields are quantified and displayed over the mapping region. Examples of field mapping and of separation into external and internal components are presented. A comparison between the three-dimensional field separation and a two-dimensional separation from a single chain of stations shows that significant differences can arise in the inferred internal component.
A phoswich detector design for improved spatial sampling in PET

NASA Astrophysics Data System (ADS)

Thiessen, Jonathan D.; Koschan, Merry A.; Melcher, Charles L.; Meng, Fang; Schellenberg, Graham; Goertzen, Andrew L.

2018-02-01

Block detector designs, utilizing a pixelated scintillator array coupled to a photosensor array in a light-sharing design, are commonly used for positron emission tomography (PET) imaging applications. In practice, the spatial sampling of these designs is limited by the crystal pitch, which must be large enough for individual crystals to be resolved in the detector flood image. Replacing the conventional 2D scintillator array with an array of phoswich elements, each consisting of an optically coupled side-by-side scintillator pair, may improve spatial sampling in one direction of the array without requiring resolving smaller crystal elements. To test the feasibility of this design, a 4 × 4 phoswich array was constructed, with each phoswich element consisting of two optically coupled, 3 . 17 × 1 . 58 × 10mm3 LSO crystals co-doped with cerium and calcium. The amount of calcium doping was varied to create a 'fast' LSO crystal with decay time of 32.9 ns and a 'slow' LSO crystal with decay time of 41.2 ns. Using a Hamamatsu R8900U-00-C12 position-sensitive photomultiplier tube (PS-PMT) and a CAEN V1720 250 MS/s waveform digitizer, we were able to show effective discrimination of the fast and slow LSO crystals in the phoswich array. Although a side-by-side phoswich array is feasible, reflections at the crystal boundary due to a mismatch between the refractive index of the optical adhesive (n = 1 . 5) and LSO (n = 1 . 82) caused it to behave optically as an 8 × 4 array rather than a 4 × 4 array. Direct coupling of each phoswich element to individual photodetector elements may be necessary with the current phoswich array design. Alternatively, in order to implement this phoswich design with a conventional light sharing PET block detector, a high refractive index optical adhesive is necessary to closely match the refractive index of LSO.
High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

2011-01-01

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of focal plane arrays based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-wavelength infrared focal plane array utilizing CBIRD design. An 11.5 micrometer cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 micrometer cutoff focal plane array are also presented. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

2011-01-01

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of focal plane arrays based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-waveleng thinfrared focal plane array utilizing CBIRD design. An 11.5 micrometer cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 micrometer cutoff focal plane array are also presented. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2017-11-01

Opto-electronic performance of the InGaAs/i-InGaAs/InP short wavelength infrared focal plane array suitable for high resolution imaging under low flux conditions and ranging is presented. More than 85% quantum efficiency is achieved in the optimized detector structure. Isotropic nature of the wet etching process poses a challenge in maintaining the required control in the small pitch high density detector array. Etching process is developed to achieve low dark current density of 1 nA/cm2 in the detector array with 25 µm pitch at 298 K. Noise equivalent photon performance less than one is achievable showing single photon detection capability. The reported photodiode with low photon flux is suitable for active cum passive imaging, optical information processing and quantum computing applications.
Upconversion single-microbelt photodetector via two-photon absorption simultaneous

NASA Astrophysics Data System (ADS)

Lou, Guanlin; Wu, Yanyan; Zhu, Hai; Li, Jinyu; Chen, Anqi; Chen, Zhiyang; Liang, Yunfeng; Ren, Yuhao; Gui, Xuchun; Zhong, Dingyong; Qiu, Zhiren; Tang, Zikang; Su, Shi C.

2018-05-01

Single microbelt (MB) photodetectors with metal–semiconductor-metal structure have been demonstrated and characterized comprehensively. For single-photon absorption, the maximum responsivity of ZnO-MB photodetector can reach as high as 1.4 × 105 A W‑1 at 20 V bias. The results about photoresponse of MB-detector reveals that two relaxation mechanisms contribute to the carrier decay time. Moreover, the two-photon absorption upconversion photoresponsivity in the single-MB detector has also been realized, which is the first report about the two-photon absorption detector to the best of our knowledge. The excellent two-photon absorption photoresponsivity characteristic of the MB device can be available not only for detector but also for solar cell and biomedical imaging. The above results present a significant step towards future fabrication of single micro/nano-structure based multiphoton excitation optoelectronic devices.
Vortex dynamics in two-dimensional Josephson junction arrays

NASA Astrophysics Data System (ADS)

Ashrafuzzaman, Md.; Capezzali, Massimiliano; Beck, Hans

2003-08-01

The dynamic response of two-dimensional Josephson junction arrays close to, but above the Berezinskii-Kosterlitz-Thouless (BKT) transition temperature is described in terms of the vortex dielectric function ɛ(ω) and the flux noise spectrum Sφ(ω). They are calculated by considering both the contributions of free vortices interacting through a screened Coulomb potential and the pair motion of vortices that are closer to each other than the BKT correlation length. This procedure allows us to understand various anomalous features in ɛ(ω) and in Sφ(ω) that have been observed both experimentally and in dynamic simulations.
Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, R.J.; Benett, W.J.; Mills, S.T.

1997-04-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.
DESIGN OF A PATTERN RECOGNITION DIGITAL COMPUTER WITH APPLICATION TO THE AUTOMATIC SCANNING OF BUBBLE CHAMBER NEGATIVES

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCormick, B.H.; Narasimhan, R.

1963-01-01

The overall computer system contains three main parts: an input device, a pattern recognition unit (PRU), and a control computer. The bubble chamber picture is divided into a grid of st run. Concent 1-mm squares on the film. It is then processed in parallel in a two-dimensional array of 1024 identical processing modules (stalactites) of the PRU. The array can function as a two- dimensional shift register in which results of successive shifting operations can be accumulated. The pattern recognition process is generally controlled by a conventional arithmetic computer. (A.G.W.)

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.
Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

NASA Astrophysics Data System (ADS)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.
Synthesis and Self-Assembly of fcc Phase FePt Nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Min; Pica, Timothy; Jiang, Ying-Bing

2007-05-01

In this paper, we report a synthesis of FePt nanorods by confining decomposition of Fe(CO) 5 and reduction of Pt(caca) 2 in surfactant reverse cylindrical micelles. The controlled nucleation and growth kinetics in confined environment allows easy control over Fe/Pt composition, nanorod uniformity, and nanorod aspect ratio. The FePt nanorods tend to self-assemble into ordered arrays along three-dimensions. Directed assembly under external magnetic field leads to two-dimensional ordered arrays, parallel to the substrate magnetic field. We expect that with optimized external magnetic fields, we should be able to assemble these nanorods into orientated one or two-dimensional arrays, providing a uniformmore » anisotropic magnetic platform for varied applications in enhanced data storage, magneto-electron transport, etc.« less
Laser scatter in clinical applications

NASA Astrophysics Data System (ADS)

Luther, Ed; Geddie, William

2008-02-01

Brightfield Laser Scanning Imaging (BLSI) is available on Laser Scanning Cytometers (LSCs) from CompuCyte Corporation. Briefly, digitation of photodetector outputs is coordinated with the combined motions of a small diameter (typically 2 to 10 microns) laser beam scanning a specimen in the Y direction (directed by a galvanometer-driven scanning mirror) and the microscope stage motion in the X direction. The output measurements are assembled into a two-dimensional array to provide a "non-real" digital image, where each pixel value reports the amount of laser-scattered light that is obtained when the laser beam is centered on that location. Depending on the detector positions, these images are analogous to Differential Interference Contrast or Phase Contrast microscopy. We report the incorporation of the new laser scattering capabilities into the workflow of a high-volume clinical cytology laboratory at University Health Network, Toronto, Canada. The laboratory has been employing LSC technology since 2003 for immunophenotypic fluorescence analysis of approximately 1200 cytological specimens per year, using the Clatch methodology. The new BLSI component allows visualization of cellular morphology at higher resolution levels than is possible with standard brightfield microscopic evaluation of unstained cells. BLSI is incorporated into the triage phase, where evaluation of unstained samples is combined with fluorescence evaluation to obtain specimen background levels. Technical details of the imaging methodology will be presented, as well as illustrative examples from current studies and comparisons to detailed, but obscure, historical studies of cytology specimens based on phase contrast microscopy.
Waveguide modes in sparse III-V nanowire arrays for ultra-broadband tunable perfect absorbers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fountaine, Katherine T.; Cheng, Wen-Hui; Bukowsky, Colton R.; Atwater, Harry A.

2016-09-01

Design of perfect absorbers and emitters has been a primary focus of the metamaterials community owing to their potential to enhance device efficiency and sensitivity in energy harvesting and sensing applications, specifically photovoltaics, thermal emission control, bolometers and photodetectors, to name a few. While reports of perfect absorbers/emitters for a specific frequency, wavevector, and polarization are ubiquitous, a broadband and polarization- and angle-insensitive perfect absorber remains a particular challenge. In this work, we report on directed optical design and fabrication of sparse III-V nanowire arrays as broadband, polarization- and angle-insensitive perfect absorbers and emitters. Specifically, we target response in the UV-Vis-NIR and NIR-SWIR-MWIR via two material systems, InP (Eg=1.34 eV) and InSb (Eg=0.17 eV), respectively. Herein, we present results on InP and InSb nanowire array broadband absorbers, supported by experiment, simulation and analytic theory. Electromagnetic simulations indicate that, with directed optical design, tapered nanowire arrays and multi-radii nanowire arrays with 5% fill fraction can achieve greater than 95% broadband absorption (λInP=400-900nm, λInSb=1.5-5.5µm), due to efficient excitation and interband transition-mediated attenuation of the HE11 waveguide mode. Experimentally-fabricated InP nanowire arrays embedded in PDMS achieved broadband, polarization- and angle-insensitive 90-95% absorption, limited primarily by reflection off the PDMS interface. Addition of a thin, planar VO2 layer above a sparse InSb nanowire array enables active thermal tunability in the infrared, effecting a 50% modulation, from 87% (insulating VO2) to 43% (metallic VO2) average absorption. These concepts and results along with photovoltaic and other optical and optoelectronic device applications will be discussed.
SPECIAL ISSUE DEVOTED TO THE 80TH BIRTHDAY OF S.A. AKHMANOV: Excitation of coherent polaritons in a two-dimensional atomic lattice

NASA Astrophysics Data System (ADS)

Barinov, I. O.; Alodzhants, A. P.; Arakelyan, Sergei M.

2009-07-01

We describe a new type of spatially periodic structure (lattice models): a polaritonic crystal formed by a two-dimensional lattice of trapped two-level atoms interacting with the electromagnetic field in a cavity (or in a one-dimensional array of tunnelling-coupled microcavities), which allows polaritons to be fully localised. Using a one-dimensional polaritonic crystal as an example, we analyse conditions for quantum degeneracy of a lower-polariton gas and those for quantum optical information recording and storage.
A Highly Sensitive Two-Dimensional Inclinometer Based on Two Etched Chirped-Fiber-Grating Arrays †

PubMed Central

Chang, Hung-Ying; Chang, Yu-Chung; Liu, Wen-Fung

2017-01-01

We present a novel two-dimensional fiber-optic inclinometer with high sensitivity by crisscrossing two etched chirped fiber Bragg gratings (CFBG) arrays. Each array is composed of two symmetrically-arranged CFBGs. By etching away most of the claddings of the CFBGs to expose the evanescent wave, the reflection spectra are highly sensitive to the surrounding index change. When we immerse only part of the CFBG in liquid, the effective index difference induces a superposition peak in the refection spectrum. By interrogating the peak wavelengths of the CFBGs, we can deduce the tilt angle and direction simultaneously. The inclinometer has a resolution of 0.003° in tilt angle measurement and 0.00187 rad in tilt direction measurement. Due to the unique sensing mechanism, the sensor is temperature insensitive. This sensor can be useful in long term continuous monitoring of inclination or in real-time feedback control of tilt angles, especially in harsh environments with violent temperature variation. PMID:29244770
Automated pupil remapping with binary optics

DOEpatents

Neal, D.R.; Mansell, J.

1999-01-26

Methods and apparatuses are disclosed for pupil remapping employing non-standard lenslet shapes in arrays; divergence of lenslet focal spots from on-axis arrangements; use of lenslet arrays to resize two-dimensional inputs to the array; and use of lenslet arrays to map an aperture shape to a different detector shape. Applications include wavefront sensing, astronomical applications, optical interconnects, keylocks, and other binary optics and diffractive optics applications. 24 figs.
Microwave Imaging in Large Helical Device

NASA Astrophysics Data System (ADS)

Yoshinaga, T.; Nagayama, Y.; Tsuchiya, H.; Kuwahara, D.; Tsuji-Iio, S.; Akaki, K.; Mase, A.; Kogi, Y.; Yamaguchi, S.; Shi, Z. B.; Hojo, H.

2011-02-01

Microwave imaging reflectometry (MIR) system and electron cyclotron emission imaging (ECEI) system are under development for the simultaneous reconstruction of the electron density and temperature fluctuation structures in the Large Helical Device (LHD). The MIR observes three-dimensional structure of disturbed cutoff surfaces by using the two-dimensionally distributed horn-antenna mixer array (HMA) of 5 × 7 channels in combination with the simultaneous projection of microwaves with four different frequency components (60.410, 61.808, 63.008 and 64.610 GHz). The ECEI is designed to observe two-dimensional structure of electron temperature by detecting second-harmonic ECE at 97-107 GHz with the one-dimensional HMA (7 channels) in the common optics with MIR system. Both the MIR and the ECEI are realized by the HMA and the band-pass filter (BPF) arrays, which are fabricated by micro-strip-line technique at low-cost.
Noncoherent parallel optical processor for discrete two-dimensional linear transformations.

PubMed

Glaser, I

1980-10-01

We describe a parallel optical processor, based on a lenslet array, that provides general linear two-dimensional transformations using noncoherent light. Such a processor could become useful in image- and signal-processing applications in which the throughput requirements cannot be adequately satisfied by state-of-the-art digital processors. Experimental results that illustrate the feasibility of the processor by demonstrating its use in parallel optical computation of the two-dimensional Walsh-Hadamard transformation are presented.
DOE Office of Scientific and Technical Information (OSTI.GOV)

Diaz, Aaron A.; Chamberlin, Clyde E.; Edwards, Matthew K.

This section of the Joint summary technical letter report (TLR) describes work conducted at the Pacific Northwest National Laboratory (PNNL) during FY 2016 (FY16) on the under-sodium viewing (USV) PNNL project 58745, work package AT-16PN230102. This section of the TLR satisfies PNNL’s M3AT-16PN2301025 milestone and is focused on summarizing the design, development, and evaluation of two different phased-array ultrasonic testing (PA-UT) probe designs—a two-dimensional (2D) matrix phased-array probe, and two one-dimensional (1D) linear array probes, referred to as serial number 4 (SN4) engineering test units (ETUs). The 2D probe is a pulse-echo (PE), 32×2, 64-element matrix phased-array ETU. The 1Dmore » probes are 32×1 element linear array ETUs. This TLR also provides the results from a performance demonstration (PD) of in-sodium target detection trials at 260°C using both probe designs. This effort continues the iterative evolution supporting the longer term goal of producing and demonstrating a pre-manufacturing prototype ultrasonic probe that possesses the fundamental performance characteristics necessary to enable the development of a high-temperature sodium-cooled fast reactor (SFR) inspection system for in-sodium detection and imaging.« less
Tissue matrix arrays for high throughput screening and systems analysis of cell function

PubMed Central

Beachley, Vince Z.; Wolf, Matthew T.; Sadtler, Kaitlyn; Manda, Srikanth S.; Jacobs, Heather; Blatchley, Michael; Bader, Joel S.; Pandey, Akhilesh; Pardoll, Drew; Elisseeff, Jennifer H.

2015-01-01

Cell and protein arrays have demonstrated remarkable utility in the high-throughput evaluation of biological responses; however, they lack the complexity of native tissue and organs. Here, we describe tissue extracellular matrix (ECM) arrays for screening biological outputs and systems analysis. We spotted processed tissue ECM particles as two-dimensional arrays or incorporated them with cells to generate three-dimensional cell-matrix microtissue arrays. We then investigated the response of human stem, cancer, and immune cells to tissue ECM arrays originating from 11 different tissues, and validated the 2D and 3D arrays as representative of the in vivo microenvironment through quantitative analysis of tissue-specific cellular responses, including matrix production, adhesion and proliferation, and morphological changes following culture. The biological outputs correlated with tissue proteomics, and network analysis identified several proteins linked to cell function. Our methodology enables broad screening of ECMs to connect tissue-specific composition with biological activity, providing a new resource for biomaterials research and translation. PMID:26480475
Two-Color Photodetector Using an Asymmetric Quantum Well Structure

DTIC Science & Technology

2002-06-01

Infrared Photodetectors ( QWIPs ). QWIPs have an advantage over other infrared detectors such as Mercury Cadmium Telluride (MCT) because they have...an asymmetric quantum well structure in which all energy transitions are possible. The QWIP structure in this thesis was designed to detect a laser...systems. 15. NUMBER OF PAGES 89 14. SUBJECT TERMS Quantum well, QWIP , Two-color detection, Infrared imager, Laser Spot Tracker, Transfer
ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.
Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

PubMed

Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

2012-12-17

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.
Photo-detectors for time of flight positron emission tomography (ToF-PET).

PubMed

Spanoudaki, Virginia Ch; Levin, Craig S

2010-01-01

We present the most recent advances in photo-detector design employed in time of flight positron emission tomography (ToF-PET). PET is a molecular imaging modality that collects pairs of coincident (temporally correlated) annihilation photons emitted from the patient body. The annihilation photon detector typically comprises a scintillation crystal coupled to a fast photo-detector. ToF information provides better localization of the annihilation event along the line formed by each detector pair, resulting in an overall improvement in signal to noise ratio (SNR) of the reconstructed image. Apart from the demand for high luminosity and fast decay time of the scintillation crystal, proper design and selection of the photo-detector and methods for arrival time pick-off are a prerequisite for achieving excellent time resolution required for ToF-PET. We review the two types of photo-detectors used in ToF-PET: photomultiplier tubes (PMTs) and silicon photo-multipliers (SiPMs) with a special focus on SiPMs.
Photo-Detectors for Time of Flight Positron Emission Tomography (ToF-PET)

PubMed Central

Spanoudaki, Virginia Ch.; Levin⋆, Craig S.

2010-01-01

We present the most recent advances in photo-detector design employed in time of flight positron emission tomography (ToF-PET). PET is a molecular imaging modality that collects pairs of coincident (temporally correlated) annihilation photons emitted from the patient body. The annihilation photon detector typically comprises a scintillation crystal coupled to a fast photo-detector. ToF information provides better localization of the annihilation event along the line formed by each detector pair, resulting in an overall improvement in signal to noise ratio (SNR) of the reconstructed image. Apart from the demand for high luminosity and fast decay time of the scintillation crystal, proper design and selection of the photo-detector and methods for arrival time pick-off are a prerequisite for achieving excellent time resolution required for ToF-PET. We review the two types of photo-detectors used in ToF-PET: photomultiplier tubes (PMTs) and silicon photo-multipliers (SiPMs) with a special focus on SiPMs. PMID:22163482
Vortex Generators in a Two-Dimensional, External-Compression Supersonic Inlet

NASA Technical Reports Server (NTRS)

Baydar, Ezgihan; Lu, Frank K.; Slater, John W.

2016-01-01

Computational fluid dynamics simulations are performed as part of a process to design a vortex generator array for a two-dimensional inlet for Mach 1.6. The objective is to improve total pressure recovery a on at the engine face of the inlet. Both vane-type and ramp-type vortex generators are examined.
Linear Vector Quantisation and Uniform Circular Arrays based decoupled two-dimensional angle of arrival estimation

NASA Astrophysics Data System (ADS)

Ndaw, Joseph D.; Faye, Andre; Maïga, Amadou S.

2017-05-01

Artificial neural networks (ANN)-based models are efficient ways of source localisation. However very large training sets are needed to precisely estimate two-dimensional Direction of arrival (2D-DOA) with ANN models. In this paper we present a fast artificial neural network approach for 2D-DOA estimation with reduced training sets sizes. We exploit the symmetry properties of Uniform Circular Arrays (UCA) to build two different datasets for elevation and azimuth angles. Linear Vector Quantisation (LVQ) neural networks are then sequentially trained on each dataset to separately estimate elevation and azimuth angles. A multilevel training process is applied to further reduce the training sets sizes.
The Development of a 30-125 Micron Array for Airborne Astronomy

NASA Technical Reports Server (NTRS)

Mason, C. G.; Dotson, J. L.; Erickson, E. F.; Farhoomand, J.; Haas, M. R.; Koerber, C. T.; Prasad, A.; Sisson, D.; Witteborn, F. C.; DeVincenzi, Donald (Technical Monitor)

2002-01-01

The development of a 30-125 micron Ge:Sb photoconductor array for AIRES (Airborne Infra-Red Echelle Spectrometer) is described. The prototype array is a 2x24 module which can be close-stacked to provide larger two-dimensional formats. Light is focused onto each detector using a collecting cone with a 2 mm pitch. The array is read out by two Raytheon SBRC-190 cryogenic multiplexers that also provide a CTIA (capacitive transimpedance amplifier) unit cell for each detector. We discuss our results from a test series conducted to measure the array performance and to evaluate its suitability for airborne astronomy.

Studies of Polar Current Systems Using the IMS Scandinavian Magnetometer Array

NASA Astrophysics Data System (ADS)

Untiedt, J.; Baumjohann, W.

1993-09-01

As a contribution to the International Magnetospheric Study (IMS, 1976 1979) a two-dimensional array of 42 temporary magnetometer stations was run in Scandinavia, supplementary to the permanent observatories and concentrated in the northern part of the region. This effort aimed at the time-dependent (periods above about 100 s) determination of the two-dimensional structure of substorm-related magnetic fields at the Earth's surface with highest reasonable spatial resolution (about 100 km, corresponding to the height of the ionosphere) near the footpoints of field-aligned electric currents that couple the disturbed magnetosphere to the ionosphere at auroral latitudes. It has been of particular advantage for cooperative studies that not only simultaneous data were available from all-sky cameras, riometers, balloons, rockets, and satellites, but also from the STARE radar facility yielding colocated two-dimensional ionospheric electric field distributions. In many cases it therefore was possible to infer the three-dimensional regional structure of substorm-related ionospheric current systems. The first part of this review outlines the basic relationships and methods that have been used or have been developed for such studies. The second short part presents typical equivalent current patterns observed by the magnetometer array in the course of substorms. Finally we review main results of studies that have been based on the magnetometer array observations and on additional data, omitting studies on geomagnetic pulsations. These studies contributed to a clarification of the nature of auroral electrojets including the Harang discontinuity and of ionospheric current systems related to auroral features such as the break-up at midnight, the westward traveling surge, eastward drifting omega bands, and spirals.
High-resolution three-dimensional imaging with compress sensing

NASA Astrophysics Data System (ADS)

Wang, Jingyi; Ke, Jun

2016-10-01

LIDAR three-dimensional imaging technology have been used in many fields, such as military detection. However, LIDAR require extremely fast data acquisition speed. This makes the manufacture of detector array for LIDAR system is very difficult. To solve this problem, we consider using compress sensing which can greatly decrease the data acquisition and relax the requirement of a detection device. To use the compressive sensing idea, a spatial light modulator will be used to modulate the pulsed light source. Then a photodetector is used to receive the reflected light. A convex optimization problem is solved to reconstruct the 2D depth map of the object. To improve the resolution in transversal direction, we use multiframe image restoration technology. For each 2D piecewise-planar scene, we move the SLM half-pixel each time. Then the position where the modulated light illuminates will changed accordingly. We repeat moving the SLM to four different directions. Then we can get four low-resolution depth maps with different details of the same plane scene. If we use all of the measurements obtained by the subpixel movements, we can reconstruct a high-resolution depth map of the sense. A linear minimum-mean-square error algorithm is used for the reconstruction. By combining compress sensing and multiframe image restoration technology, we reduce the burden on data analyze and improve the efficiency of detection. More importantly, we obtain high-resolution depth maps of a 3D scene.
NECTAR: New electronics for the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Naumann, Christopher Lindsay; Bolmont, J.; Corona, P.; Delagnes, E.; Dzahini, D.; Feinstein, F.; Gascon, D.; Glicenstein, J.-F.; Nayman, P.; Rarbi, F.; Ribo, M.; Sanuy, A.; Siero, X.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The international CTA consortium is currently in the preparatory phase for the development of the next-generation Cherenkov Telescope Array (CTA [1]), based on the return of experience from the three major current-generation arrays H.E.S.S., MAGIC and VERITAS. To achieve an unprecedented sensitivity and energy range for TeV gamma rays, a new kind of flexible and powerful yet inexpensive front-end hardware will be required for the order of 105 channels of photodetectors in up to 100 telescopes. One possible solution is the NECTAr (New Electronics for the Cherenkov Telescope Array) system, based on the integration of as much as possible of the front-end electronics (amplifiers, fast analogue samplers, memory and ADCs) into a single ASIC for very fast readout performance and a significant reduction of the cost and the lower consumption per channel, while offering a high degree of flexibility both for the triggering and the readout of the telescope. The current status of its development is presented, along with newest results from measurements and simulation studies.
Realization of integral 3-dimensional image using fabricated tunable liquid lens array

NASA Astrophysics Data System (ADS)

Lee, Muyoung; Kim, Junoh; Kim, Cheol Joong; Lee, Jin Su; Won, Yong Hyub

2015-03-01

Electrowetting has been widely studied for various optical applications such as optical switch, sensor, prism, and display. In this study, vari-focal liquid lens array is developed using electrowetting principle to construct integral 3-dimensional imaging. The electrowetting principle that changes the surface tension by applying voltage has several advantages to realize active optical device such as fast response time, low electrical consumption, and no mechanical moving parts. Two immiscible liquids that are water and oil are used for forming lens. By applying a voltage to the water, the focal length of the lens could be tuned as changing contact angle of water. The fabricated electrowetting vari-focal liquid lens array has 1mm diameter spherical lens shape that has 1.6mm distance between each lens. The number of lenses on the panel is 23x23 and the focal length of the lens array is simultaneously tuned from -125 to 110 diopters depending on the applied voltage. The fabricated lens array is implemented to integral 3-dimensional imaging. A 3D object is reconstructed by fabricated liquid lens array with 23x23 elemental images that are generated by 3D max tools. When liquid lens array is tuned as convex state. From vari-focal liquid lens array implemented integral imaging system, we expect that depth enhanced integral imaging can be realized in the near future.
Advances in OLED-based oxygen sensors with structurally integrated OLED, sensor film, and thin-film Si photodetector

NASA Astrophysics Data System (ADS)

Ghosh, Debju; Shinar, Ruth; Cai, Yuankun; Zhou, Zhaoqun; Dalal, Vikram L.; Shinar, Joseph

2007-09-01

Steps towards the improvement of a compact photoluminescence (PL)-based sensor array that is fully structurally integrated are described. The approach is demonstrated for oxygen sensing, which can be monitored via its effect on the PL intensity I or decay time τ of oxygen-sensitive dyes such as Pt octaethylporphryn (PtOEP) and its Pd analog (PdOEP). The integrated components include (1) an organic light emitting device (OLED) excitation source, which is an array of coumarin-doped tris(quinolinolate) Al (Alq 3) pixels, (2) the sensor film, i.e., PdOEP embedded in polystyrene, and (3) the photodetector (PD), which is a plasma-enhanced CVD-grown p-i-n or n-i-p structure, based on amorphous or nanocrystalline (Si,Ge):H. These components are fabricated on common or separate substrates that are attached back-to-back, resulting in sensors with a thickness largely determined by that of the substrates. The fully integrated oxygen sensor is demonstrated first by fabricating each of the three components on a separate substrate. The PD was placed in front of a flow cell containing the sensor film, while the OLED array was "behind" the sensor film. This design showed the expected trend in monitoring different concentration of O II via their effect on I, with improved detection sensitivity achieved by shielding the electromagnetic noise synchronous with the pulsed OLED. The detection sensitivity using the I monitoring mode is expected to further increase by reducing the OLED tail emission. The issue of the OLED background can be eliminated by monitoring the oxygen concentration via its effect on τ, where the OLED is pulsed and τ is measured while the OLED is off. Steps therefore focused also on shortening the response time of the PDs, and understanding the factors affecting their speed. Development of a sensor array, where the PD pixels are fabricated between the OLED pixels on the same side of a common substrate, is also discussed.
Stressed detector arrays for airborne astronomy

NASA Technical Reports Server (NTRS)

Stacey, G. J.; Beeman, J. W.; Haller, E. E.; Geis, N.; Poglitsch, A.; Rumitz, M.

1989-01-01

The development of stressed Ge:Ga detector arrays for far-infrared astronomy from the Kuiper Airborne Observatory (KAO) is discussed. Researchers successfully constructed and used a three channel detector array on five flights from the KAO, and have conducted laboratory tests of a two-dimensional, 25 elements (5x5) detector array. Each element of the three element array performs as well as the researchers' best single channel detector, as do the tested elements of the 25 channel system. Some of the exciting new science possible with far-infrared detector arrays is also discussed.
Integrated Graphene-Based Optoelectronic Devices Used for Ultrafast Optical-THz Photodetectors, Modulators and Emitters

DTIC Science & Technology

2015-04-03

08 and AFRL/ CA policy clarification memorandum dated 16 Jan 09. This report is available to the general public, including foreign nationals. Copies... doped graphene micro-ribbon array and a quantum-well electron gas sitting at an interface between a half-space of air and another half-space of a... doped semiconductor substrate which supports a surface-plasmon mode in our system. The coupling between a spatially-modulated total electromagnetic
Ring-Interferometric Sol-Gel Bio-Sensor

NASA Technical Reports Server (NTRS)

Bearman, Gregory (Inventor); Cohen, David (Inventor)

2006-01-01

A biosensor embodying the invention includes a sensing volume having an array of pores sized for immobilizing a first biological entity tending to bind to a second biological entity in such a manner as to change an index of refraction of the sensing volume. The biosensor further includes a ring interferometer, one volumetric section of the ring interferometer being the sensing volume, a laser for supplying light to the ring interferometer, and a photodetector for receiving light from the interferometer.
Multi-channel infrared thermometer

DOEpatents

Ulrickson, M.A.

A device for measuring the two-dimensional temperature profile of a surface comprises imaging optics for generating an image of the light radiating from the surface; an infrared detector array having a plurality of detectors; and optical means positioned between the imaging optics and the detector array for sampling, transmitting, and distributing the image over the detector surfaces. The optical means may be a light pipe array having one light pipe for each detector in the detector array.
An experimental distribution of analog and digital information in a hybrid wireless visible light communication system based on acousto-optic modulation and sinusoidal gratings

NASA Astrophysics Data System (ADS)

Gómez Colín, R.; García Juárez, A.; Zaldívar Huerta, I. E.; Marquina, A. Vera; García Delgado, L. A.; Leal Cruz, A. L.; Gómez Fuentes, R.

2016-03-01

In this paper we propose a photonic architecture as an alternative tool to distribute point to multipoint analog and digital information over a hybrid wireless visible optical communication system. The experimental set-up is composed of a red laser pointer, an acousto-optic modulator, a sinusoidal grating and a photo-detector array. By using a simple and variable interferometric system, diffraction gratings with different spatial frequencies are generated and recorded on a photoemulsion which is composed of vanilla with dichromate gelatin. Analog video and digital information are first transmitted and recovered over a wireless communication system using a microwave carrier at 4.52 GHz which is generated by distributed feedback lasers operating in the low laser threshold current region. Separately, the recovered video information and digital data are combined with a radio frequency signal of 80 MHz, obtaining a subcarrier of information that is imposed on the optical carrier of the pointer laser using an acousto-optic modulator which is operated with an angle of incident light that satisfies the Bragg condition. The modulated optical carrier is sent to a sinusoidal grating, the diffraction pattern is photo-detected using an array of PIN photo-detectors. The use of sinusoidal gratings with acousto-optic modulators allows that number of channels to be increased when both components are placed in cascade.
Apparatus and method for heterodyne-generated two-dimensional detector array using a single element detector

DOEpatents

Strauss, Charlie E.

1997-01-01

Apparatus and method for heterodyne-generated, two-dimensional detector array using a single detector. Synthetic-array heterodyne detection, permits a single-element optical detector to behave as though it were divided into an array of separate heterodyne detector elements. A fifteen-element synthetic array has successfully been experimentally realized on a single-element detector, permitting all of the array elements to be read out continuously and in parallel from one electrical connection. A CO.sub.2 laser and a single-element HgCdTe photodiode are employed. A different heterodyne local oscillator frequency is incident upon the spatially resolvable regions of the detector surface. Thus, different regions are mapped to different heterodyne beat frequencies. One can determine where the photons were incident on the detector surface even though a single electrical connection to the detector is used. This also prevents the destructive interference that occurs when multiple speckles are imaged (similar to spatial diversity), In coherent LIDAR this permits a larger field of view. An acoustooptic modulator generates the local oscillator frequencies and can achieve adequate spatial separation of optical frequencies of the order of a megahertz apart.
Apparatus and method for heterodyne-generated two-dimensional detector array using a single element detector

DOEpatents

Strauss, C.E.

1997-11-18

Apparatus and method are disclosed for heterodyne-generated, two-dimensional detector array using a single detector. Synthetic-array heterodyne detection, permits a single-element optical detector to behave as though it were divided into an array of separate heterodyne detector elements. A fifteen-element synthetic array has successfully been experimentally realized on a single-element detector, permitting all of the array elements to be read out continuously and in parallel from one electrical connection. A CO{sub 2} laser and a single-element HgCdTe photodiode are employed. A different heterodyne local oscillator frequency is incident upon the spatially resolvable regions of the detector surface. Thus, different regions are mapped to different heterodyne beat frequencies. One can determine where the photons were incident on the detector surface even though a single electrical connection to the detector is used. This also prevents the destructive interference that occurs when multiple speckles are imaged (similar to spatial diversity), In coherent LIDAR this permits a larger field of view. An acoustooptic modulator generates the local oscillator frequencies and can achieve adequate spatial separation of optical frequencies of the order of a megahertz apart. 4 figs.
Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man, E-mail: liusm@semi.ac.cn

2016-06-20

We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10{sup 11} cm Hz{sup 1/2} W{sup −1} at 77 K, which remained at 10{sup 8} cm Hz{sup 1/2} W{sup −1} at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.
A boundary-Fitted Coordinate Code for General Two-Dimensional Regions with Obstacles and Boundary Intrusions.

DTIC Science & Technology

1983-03-01

values of these functions on the two sides of the slits. The acceleration parameters for the iteration at each point are in the field array WACC (I,J...code will calculate a locally optimum value at each point in the field, these values being placed in the field array WACC . This calculation is...changes in x and y, are calculated by calling subroutine ERROR.) The acceleration parameter is placed in the field 65 array WACC . The addition to the
Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.
Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

PubMed

Zhou, Yubing; Deng, Bing; Zhou, Yu; Ren, Xibiao; Yin, Jianbo; Jin, Chuanhong; Liu, Zhongfan; Peng, Hailin

2016-03-09

The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C. Uniform and large-domain-sized 2D crystals of GaSe and GaxIn1-xSe were grown on liquid metal surface even supported on a polyimide film. As-grown 2D GaSe crystals have been fabricated to flexible photodetectors, showing high photoresponse and excellent flexibility. Our strategy of energy-sustainable low-temperature growth on liquid metal surface may open a route to the synthesis of high-quality 2D crystals of Ga-, In-, Bi-, Hg-, Pb-, or Sn-based chalcogenides and halides.
Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain.

PubMed

Song, Chaoyu; Fan, Fengren; Xuan, Ningning; Huang, Shenyang; Zhang, Guowei; Wang, Chong; Sun, Zhengzong; Wu, Hua; Yan, Hugen

2018-01-31

Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent band gap, spanning the visible and near infrared regions, and thus recently has been drawing tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structures. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain and observe a salient shift of photoluminescence peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for four- to eight-layer samples, which is much larger than that for the widely studied MoS 2 monolayer. Density functional theory calculations well reproduce the observed layer-dependent band gaps and the strain effect and reveal that the shift rate decreases with the increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile two-dimensional electronic and optoelectronic material, which is suitable for tunable light emitters, photodetectors, and other optoelectronic devices.
Two-dimensional straightness measurement based on optical knife-edge sensing

NASA Astrophysics Data System (ADS)

Wang, Chen; Zhong, Fenghe; Ellis, Jonathan D.

2017-09-01

Straightness error is a parasitic translation along a perpendicular direction to the primary displacement axis of a linear stage. The parasitic translations could be coupled into other primary displacement directions of a multi-axis platform. Hence, its measurement and compensation are critical in precision multi-axis metrology, calibration, and manufacturing. This paper presents a two-dimensional (2D) straightness measurement configuration based on 2D optical knife-edge sensing, which is simple, light-weight, compact, and easy to align. It applies a 2D optical knife-edge to manipulate the diffraction pattern sensed by a quadrant photodetector, whose output voltages could derive 2D straightness errors after a calibration process. This paper analyzes the physical model of the configuration and performs simulations and experiments to study the system sensitivity, measurement nonlinearity, and error sources. The results demonstrate that the proposed configuration has higher sensitivity and insensitive to beam's vibration, compared with the conventional configurations without using the knife-edge, and could achieve ±0.25 μ m within a ±40 μ m measurement range along a 40 mm primary axial motion.
Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

PubMed

Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

2016-03-22

Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.
High-resolution line-shape spectroscopy during a laser pulse based on Dual-Broad-Band-CARS interferometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vereschagin, Konstantin A; Vereschagin, Alexey K; Smirnov, Valery V

2006-07-31

A high-resolution spectroscopic method is developed for recording Raman spectra of molecular transitions in transient objects during a laser pulse with a resolution of {approx}0.1 cm{sup -1}. The method is based on CARS spectroscopy using a Fabry-Perot interferometer for spectral analysis of the CARS signal and detecting a circular interferometric pattern on a two-dimensional multichannel photodetector. It is shown that the use of the Dual-Broad-Band-CARS configuration to obtain the CARS process provides the efficient averaging of the spectral-amplitude noise of the CARS signal generated by a laser pulse and, in combination with the angular integration of the two-dimensional interference pattern,more » considerably improves the quality of interferograms. The method was tested upon diagnostics of the transient oxygen-hydrogen flame where information on the shapes of spectral lines of the Q-branch of hydrogen molecules required for measuring temperature was simultaneously obtained and used. (special issue devoted to the 90th anniversary of a.m. prokhorov)« less

Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers.

PubMed

Cao, J R; Lee, Po-Tsung; Choi, Sang-Jun; O'Brien, John D; Dapkus, P Daniel

2002-01-01

Lithographic tuning of operating wavelengths in a photonic crystal laser array is demonstrated. The photonic crystal lattice constant is varied by 2 nm between elements of the array, and a wavelength spacing of approximately 4 nm is achieved.
Compact microwave imaging system to measure spatial distribution of plasma density

NASA Astrophysics Data System (ADS)

Ito, H.; Oba, R.; Yugami, N.; Nishida, Y.

2004-10-01

We have developed an advanced microwave interferometric system operating in the K band (18-27 GHz) with the use of a fan-shaped microwave based on a heterodyne detection system for measuring the spatial distribution of the plasma density. In order to make a simple, low-cost, and compact microwave interferometer with better spatial resolution, a microwave scattering technique by a microstrip antenna array is employed. Experimental results show that the imaging system with the microstrip antenna array can have finer spatial resolution than one with the diode antenna array and reconstruct a good spatially resolved image of the finite size dielectric phantoms placed between the horn antenna and the micro strip antenna array. The precise two-dimensional electron density distribution of the cylindrical plasma produced by an electron cyclotron resonance has been observed. As a result, the present imaging system is more suitable for a two- or three-dimensional display of the objects or stationary plasmas and it is possible to realize a compact microwave imaging system.
Operating scheme for the light-emitting diode array of a volumetric display that exhibits multiple full-color dynamic images

NASA Astrophysics Data System (ADS)

Hirayama, Ryuji; Shiraki, Atsushi; Nakayama, Hirotaka; Kakue, Takashi; Shimobaba, Tomoyoshi; Ito, Tomoyoshi

2017-07-01

We designed and developed a control circuit for a three-dimensional (3-D) light-emitting diode (LED) array to be used in volumetric displays exhibiting full-color dynamic 3-D images. The circuit was implemented on a field-programmable gate array; therefore, pulse-width modulation, which requires high-speed processing, could be operated in real time. We experimentally evaluated the developed system by measuring the luminance of an LED with varying input and confirmed that the system works appropriately. In addition, we demonstrated that the volumetric display exhibits different full-color dynamic two-dimensional images in two orthogonal directions. Each of the exhibited images could be obtained only from the prescribed viewpoint. Such directional characteristics of the system are beneficial for applications, including digital signage, security systems, art, and amusement.
Ordered nanoparticle arrays formed on engineered chaperonin protein templates

NASA Technical Reports Server (NTRS)

McMillan, R. Andrew; Paavola, Chad D.; Howard, Jeanie; Chan, Suzanne L.; Zaluzec, Nestor J.; Trent, Jonathan D.

2002-01-01

Traditional methods for fabricating nanoscale arrays are usually based on lithographic techniques. Alternative new approaches rely on the use of nanoscale templates made of synthetic or biological materials. Some proteins, for example, have been used to form ordered two-dimensional arrays. Here, we fabricated nanoscale ordered arrays of metal and semiconductor quantum dots by binding preformed nanoparticles onto crystalline protein templates made from genetically engineered hollow double-ring structures called chaperonins. Using structural information as a guide, a thermostable recombinant chaperonin subunit was modified to assemble into chaperonins with either 3 nm or 9 nm apical pores surrounded by chemically reactive thiols. These engineered chaperonins were crystallized into two-dimensional templates up to 20 microm in diameter. The periodic solvent-exposed thiols within these crystalline templates were used to size-selectively bind and organize either gold (1.4, 5 or 10nm) or CdSe-ZnS semiconductor (4.5 nm) quantum dots into arrays. The order within the arrays was defined by the lattice of the underlying protein crystal. By combining the self-assembling properties of chaperonins with mutations guided by structural modelling, we demonstrate that quantum dots can be manipulated using modified chaperonins and organized into arrays for use in next-generation electronic and photonic devices.
Precise DOA Estimation Using SAGE Algorithm with a Cylindrical Array

NASA Astrophysics Data System (ADS)

Takanashi, Masaki; Nishimura, Toshihiko; Ogawa, Yasutaka; Ohgane, Takeo

A uniform circular array (UCA) is a well-known array configuration which can accomplish estimation of 360° field of view with identical accuracy. However, a UCA cannot estimate coherent signals because we cannot apply the SSP owing to the structure of UCA. Although a variety of studies on UCA in coherent multipath environments have been done, it is impossible to estimate the DOA of coherent signals with different incident polar angles. Then, we have proposed Root-MUSIC algorithm with a cylindrical array. However, the estimation performance is degraded when incident signals arrive with close polar angles. To solve this problem, in the letter, we propose to use SAGE algorithm with a cylindrical array. Here, we adopt a CLA Root-MUSIC for the initial estimation and decompose two-dimensional search to double one-dimensional search to reduce the calculation load. The results show that the proposal achieves high resolution with low complexity.
In situ two-dimensional imaging quick-scanning XAFS with pixel array detector.

PubMed

Tanida, Hajime; Yamashige, Hisao; Orikasa, Yuki; Oishi, Masatsugu; Takanashi, Yu; Fujimoto, Takahiro; Sato, Kenji; Takamatsu, Daiko; Murayama, Haruno; Arai, Hajime; Matsubara, Eiichiro; Uchimoto, Yoshiharu; Ogumi, Zempachi

2011-11-01

Quick-scanning X-ray absorption fine structure (XAFS) measurements were performed in transmission mode using a PILATUS 100K pixel array detector (PAD). The method can display a two-dimensional image for a large area of the order of a centimetre with a spatial resolution of 0.2 mm at each energy point in the XAFS spectrum. The time resolution of the quick-scanning method ranged from 10 s to 1 min per spectrum depending on the energy range. The PAD has a wide dynamic range and low noise, so the obtained spectra have a good signal-to-noise ratio.
Single-lens computed tomography imaging spectrometer and method of capturing spatial and spectral information

NASA Technical Reports Server (NTRS)

Wilson, Daniel W. (Inventor); Johnson, William R. (Inventor); Bearman, Gregory H. (Inventor)

2011-01-01

Computed tomography imaging spectrometers ("CTISs") employing a single lens are provided. The CTISs may be either transmissive or reflective, and the single lens is either configured to transmit and receive uncollimated light (in transmissive systems), or is configured to reflect and receive uncollimated light (in reflective systems). An exemplary transmissive CTIS includes a focal plane array detector, a single lens configured to transmit and receive uncollimated light, a two-dimensional grating, and a field stop aperture. An exemplary reflective CTIS includes a focal plane array detector, a single mirror configured to reflect and receive uncollimated light, a two-dimensional grating, and a field stop aperture.
Characterization of Large-Area SiPM Array for PET Applications

NASA Astrophysics Data System (ADS)

Du, Junwei; Yang, Yongfeng; Bai, Xiaowei; Judenhofer, Martin S.; Berg, Eric; Di, Kun; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

2016-02-01

The performance of an 8 ×8 array of 6.0 ×6.0 mm2 (active area) SiPMs was evaluated for PET applications using crystal arrays with different pitch sizes (3.4, 1.5, 1.35, and 1.2 mm) and custom designed five-channel front-end readout electronics (four channels for position information and one channel for timing information). The total area of this SiPM array is 57.4 ×57.4 mm2, and the pitch size is 7.2 mm. It was fabricated using enhanced blue sensitivity SiPMs (MicroFB-60035-SMT) with peak spectral sensitivity at 420 nm. The performance of the SiPM array was characterized by measuring flood histogram decoding quality, energy resolution, timing resolution and saturation at several bias voltages (from 25.0 to 30.0 V in 0.5 V intervals) and two different temperatures ( 5° C and 20°C). Results show that the best flood histogram was obtained at a bias voltage of 28.0 V and 5°C and an array of polished LSO crystals with a pitch as small as 1.2 mm can be resolved. No saturation was observed up to a bias voltage of 29.5 V during the experiments, due to adequate light sharing between SiPMs. Energy resolution and timing resolution at 5°C ranged from 12.7 ±0.8% to 14.6 ±1.4% and 1.58 ±0.13 ns to 2.50 ±0.44 ns, for crystal array pitch sizes of 3.4 and 1.2 mm, respectively. Superior flood histogram quality, energy resolution and timing resolution were obtained with larger crystal array pitch sizes and at lower temperature. Based on our findings, we conclude that this large-area SiPM array can serve as a suitable photodetector for high-resolution small-animal PET or dedicated human brain PET scanners.
Continuous-Flow Electrophoresis of DNA and Proteins in a Two-Dimensional Capillary-Well Sieve.

PubMed

Duan, Lian; Cao, Zhen; Yobas, Levent

2017-09-19

Continuous-flow electrophoresis of macromolecules is demonstrated using an integrated capillary-well sieve arranged into a two-dimensional anisotropic array on silicon. The periodic array features thousands of entropic barriers, each resulting from an abrupt interface between a 2 μm deep well (channel) and a 70 nm capillary. These entropic barriers owing to two-dimensional confinement within the capillaries are vastly steep in relation to those arising from slits featuring one-dimensional confinement. Thus, the sieving mechanisms can sustain relatively large electric field strengths over a relatively small array area. The sieve rapidly sorts anionic macromolecules, including DNA chains and proteins in native or denatured states, into distinct trajectories according to size or charge under electric field vectors orthogonally applied. The baseline separation is achieved in less than 1 min within a horizontal migration length of ∼1.5 mm. The capillaries are self-enclosed conduits in cylindrical profile featuring a uniform diameter and realized through an approach that avoids advanced patterning techniques. The approach exploits a thermal reflow of a layer of doped glass for shape transformation into cylindrical capillaries and for controllably shrinking the capillary diameter. Lastly, atomic layer deposition of alumina is introduced for the first time to fine-tune the capillary diameter as well as to neutralize the surface charge, thereby suppressing undesired electroosmotic flows.
Nanostructures having high performance thermoelectric properties

DOEpatents

Yang, Peidong; Majumdar, Arunava; Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz

2015-12-22

The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.
Nanostructures having high performance thermoelectric properties

DOEpatents

Yang, Peidong; Majumdar, Arunava; Hochbaum, Allon I; Chen, Renkun; Delgado, Raul Diaz

2014-05-20

The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.
Fundamental Study on One-Dimensional-Array Medical Ultrasound Probe with Piezoelectric Polycrystalline Film by Hydrothermal Method: Experimental Fabrication of One-Dimensional-Array Ultrasound Probe

NASA Astrophysics Data System (ADS)

Endo, Akito; Kawashima, Norimichi; Takeuchi, Shinichi; Ishikawa, Mutsuo; Kurosawa, Minoru Kuribayashi

2007-07-01

We deposited a lead zirconate titanete (PZT) polycrystalline film on a titanium substrate by the hydrothermal method and fabricated a transducer using the PZT film for use as an ultrasound probe. A 10 MHz miniature one-dimensional-array medical ultrasound probe containing the PZT film was developed. After sputtering titanium on the surface of a hydroxyapatite substrate, the titanium film on the substrate was etched by the photolithography to form a one-dimensional titanium film electrode array. We could thus fabricate a miniature one-dimensional-array ultrasound probe by the hydrothermal method. Transmitted ultrasound pulses from a 10 MHz commercial ultrasound probe were received by the newly fabricated one-dimensional-array ultrasound probe. The fabrication process of the probe and the results of experiments on receiving waveforms were reported in this paper.
Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542
Infrared to visible image up-conversion using optically addressed spatial light modulator utilizing liquid crystal and InGaAs photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solodar, A., E-mail: asisolodar@gmail.com; Arun Kumar, T.; Sarusi, G.

2016-01-11

Combination of InGaAs/InP heterojunction photodetector with nematic liquid crystal (LC) as the electro-optic modulating material for optically addressed spatial light modulator for short wavelength infra-red (SWIR) to visible light image conversion was designed, fabricated, and tested. The photodetector layer is composed of 640 × 512 photodiodes array based on heterojunction InP/InGaAs having 15 μm pitch on InP substrate and with backside illumination architecture. The photodiodes exhibit extremely low, dark current at room temperature, with optimum photo-response in the SWIR region. The photocurrent generated in the heterojunction, due to the SWIR photons absorption, is drifted to the surface of the InP,more » thus modulating the electric field distribution which modifies the orientation of the LC molecules. This device can be attractive for SWIR to visible image upconversion, such as for uncooled night vision goggles under low ambient light conditions.« less
Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Goldberg, A.; La, A.; Gunapala, S.

2003-01-01

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.
Basic performance evaluation of a Si-PM array-based LGSO phoswich DOI block detector for a high-resolution small animal PET system.

PubMed

Yamamoto, Seiichi

2013-07-01

The silicon photomultiplier (Si-PM) is a promising photodetector for PET. However, it remains unclear whether Si-PM can be used for a depth-of-interaction (DOI) detector based on the decay time differences of the scintillator where pulse shape analysis is used. For clarification, we tested the Hamamatsu 4 × 4 Si-PM array (S11065-025P) combined with scintillators that used different decay times to develop DOI block detectors using the pulse shape analysis. First, Ce-doped Gd(2)SiO(5) (GSO) scintillators of 0.5 mol% Ce were arranged in a 4 × 4 matrix and were optically coupled to the center of each pixel of the Si-PM array for measurement of the energy resolution as well as its gain variations according to the temperature. Then two types of Ce-doped Lu(1.9)Gd(0.1)Si0(5) (LGSO) scintillators, 0.025 mol% Ce (decay time: ~31 ns) and 0.75 mol% Ce (decay time: ~46 ns), were optically coupled in the DOI direction, arranged in a 11 × 7 matrix, and optically coupled to a Si-PM array for testing of the possibility of a high-resolution DOI detector. The energy resolution of the Si-PM array-based GSO block detector was 18 ± 4.4 % FWHM for a Cs-137 gamma source (662 keV). Less than 1 mm crystals were clearly resolved in the position map of the LGSO DOI block detector. The peak-to-valley ratio (P/V) derived from the pulse shape spectra of the LGSO DOI block detector was 2.2. These results confirmed that Si-PM array-based DOI block detectors are promising for high-resolution small animal PET systems.
Construction of high frame rate images with Fourier transform

NASA Astrophysics Data System (ADS)

Peng, Hu; Lu, Jian-Yu

2002-05-01

Traditionally, images are constructed with a delay-and-sum method that adjusts the phases of received signals (echoes) scattered from the same point in space so that they are summed in phase. Recently, the relationship between the delay-and-sum method and the Fourier transform is investigated [Jian-yu Lu, Anjun Liu, and Hu Peng, ``High frame rate and delay-and-sum imaging methods,'' IEEE Trans. Ultrason. Ferroelectr. Freq. Control (submitted)]. In this study, a generic Fourier transform method is developed. Two-dimensional (2-D) or three-dimensional (3-D) high frame rate images can be constructed using the Fourier transform with a single transmission of an ultrasound pulse from an array as long as the transmission field of the array is known. To verify our theory, computer simulations have been performed with a linear array, a 2-D array, a convex curved array, and a spherical 2-D array. The simulation results are consistent with our theory. [Work supported in part by Grant 5RO1 HL60301 from NIH.
Hybrid Black Phosphorus/Zero-Dimensional Quantum Dot Phototransistors: Tunable Photodoping and Enhanced Photoresponsivity.

PubMed

Lee, A-Young; Ra, Hyun-Soo; Kwak, Do-Hyun; Jeong, Min-Hye; Park, Jeong-Hyun; Kang, Yeon-Su; Chae, Weon-Sik; Lee, Jong-Soo

2018-05-09

Recently, black phosphorus (BP) with direct band gap exhibited excellent potential for optoelectronic applications because of its high charge carrier mobility and low dark current as well as the variable band gap of 0.3-1.5 eV depending on the number of layers. However, few-layer BP-based phototransistors (photo-FETs) have been limited in sensitivity and wavelength selectivity. To overcome the drawback of these photo-FETs, we studied hybrid photo-FETs combined with the novel properties of the two materials between the channel and sensitizer layers. By combining a strong absorbance of a quantum dot (QD) layer and a two-dimensional layer material with high carrier mobility, the hybrid photo-FETs are expected to produce high-performance photodetectors that can effectively control the responsivity, detectivity, and response time. In this study, we demonstrate that the photogenerated carriers formed from QD sensitizer layers migrate to the BP transport layer with high charge mobility and not only improve the photodetector performance but also enhance the photodoping effect of the BP transport layer with an ambipolar characteristic by electrons transferred from n-type CdSe QDs or holes injected from p-type PbS QDs. The responsivity and detectivity of hybrid BP/0D photo-FETs exhibit 1.16 × 10 9 A W -1 and 7.53 × 10 16 Jones for the BP/CdSe QD photo-FET and 5.36 × 10 8 A W -1 and 1.89 × 10 16 Jones for the BP/PbS QD photo-FET, respectively. The photocurrent rise (τ rise ) and decay (τ decay ) times were τ rise = 0.406 s and τ decay = 0.815 s for BP/CdSe QD photo-FET and τ rise = 0.576 s and τ decay = 0.773 s for BP/PbS QD photo-FET, respectively.
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire.

PubMed

Fang, Hehai; Hu, Weida; Wang, Peng; Guo, Nan; Luo, Wenjin; Zheng, Dingshan; Gong, Fan; Luo, Man; Tian, Hongzheng; Zhang, Xutao; Luo, Chen; Wu, Xing; Chen, Pingping; Liao, Lei; Pan, Anlian; Chen, Xiaoshuang; Lu, Wei

2016-10-12

One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼10 12 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼10 10 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.
Performance evaluation of a conformal thermal monitoring sheet (TMS) sensor array for measurement of surface temperature distributions during superficial hyperthermia treatments

PubMed Central

Arunachalam, K.; Maccarini, P.; Juang, T.; Gaeta, C.; Stauffer, P. R.

2009-01-01

Purpose This paper presents a novel conformal thermal monitoring sheet sensor array with differential thermal sensitivity for measuring temperature distributions over large surface areas. Performance of the sensor array is evaluated in terms of thermal accuracy, mechanical stability and conformity to contoured surfaces, probe self heating under irradiation from microwave and ultrasound hyperthermia sources, and electromagnetic field perturbation. Materials and Methods A prototype TMS with 4×4 array of fiberoptic sensors embedded between two flexible and thermally conducting polyimide films was developed as an alternative to the standard 1-2 mm diameter plastic catheter based probes used in clinical hyperthermia. Computed tomography images and bending tests were performed to evaluate the conformability and mechanical stability respectively. Irradiation and thermal barrier tests were conducted and thermal response of the prototype was compared with round cross-sectional clinical probes. Results Bending and conformity tests demonstrated higher flexibility, dimensional stability and close conformity to human torso. Minimal perturbation of microwave fields and low probe self heating was observed when irradiated with 915MHz microwave and 3.4MHz ultrasound sources. The transient and steady state thermal responses of the TMS array were superior compared to the clinical probes. Conclusions A conformal TMS sensor array with improved thermal sensitivity and dimensional stability was investigated for real-time skin temperature monitoring. This fixed-geometry, body-conforming array of thermal sensors allows fast and accurate characterization of two-dimensional temperature distributions over large surface areas. The prototype TMS demonstrates significant advantages over clinical probes for characterizing skin temperature distributions during hyperthermia treatments of superficial tissue disease. PMID:18465416

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