NASA Astrophysics Data System (ADS)
Gillet, Jean-Numa; Degorce, Jean-Yves; Belisle, Jonathan; Meunier, Michel
2004-03-01
Three-dimensional modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting devices for analog ULSI microelectronics Jean-Numa Gillet,^a,b Jean-Yves Degorce,^a Jonathan Bélisle^a and Michel Meunier.^a,c ^a École Polytechnique de Montréal, Dept. of Engineering Physics, CP 6079, Succ. Centre-vile, Montréal, Québec H3C 3A7, Canada. ^b Corresponding author. Email: Jean-Numa.Gillet@polymtl.ca ^c Also with LTRIM Technologies, 140-440, boul. A.-Frappier, Laval, Québec H7V 4B4, Canada. We present for the first time three-dimensional (3-D) modeling of n^+-ν -n^+ and p^+-π -p^+ semiconducting resistors, which are fabricated by laser-induced doping in a gateless MOSFET and present significant applications for analog ULSI microelectronics. Our modeling software is made up of three steps. The two first concerns modeling of a new laser-trimming fabrication process. With the molten-silicon temperature distribution obtained from the first, we compute in the second the 3-D dopant distribution, which creates the electrical link through the device gap. In this paper the emphasis is on the third step, which concerns 3-D modeling of the resistor electronic behavior with a new tube multiplexing algorithm (TMA). The device current-voltage (I-V) curve is usually obtained by solving three coupled partial differential equations with a finite-element method. A 3-D device as our resistor cannot be modeled with this classical method owing to its prohibitive computational cost in three dimensions. This problem is however avoided by our TMA, which divides the 3-D device into one-dimensional (1-D) multiplexed tubes. In our TMA 1-D systems of three ordinary differential equations are solved to determine the 3-D device I-V curve, which substantially increases computation speed compared with the classical method. Numerical results show a good agreement with experiments.
ERIC Educational Resources Information Center
Alexander, George
1984-01-01
Discusses small-scale integrated (SSI), medium-scale integrated (MSI), large-scale integrated (LSI), very large-scale integrated (VLSI), and ultra large-scale integrated (ULSI) chips. The development and properties of these chips, uses of gallium arsenide, Josephson devices (two superconducting strips sandwiching a thin insulator), and future…
NASA Astrophysics Data System (ADS)
Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar
2018-05-01
Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.
REVIEW ARTICLE: How will physics be involved in silicon microelectronics
NASA Astrophysics Data System (ADS)
Kamarinos, Georges; Felix, Pierre
1996-03-01
By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the `semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in `physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By `physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) `scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the `first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.
Defect generation in electronic devices under plasma exposure: Plasma-induced damage
NASA Astrophysics Data System (ADS)
Eriguchi, Koji
2017-06-01
The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore’s law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). This article comprehensively addresses the negative aspect of plasma processing — plasma-induced damage (PID). PID naturally not only modifies the surface morphology of materials but also degrades the performance and reliability of MOSFETs as a result of defect generation in the materials. Three key mechanisms of PID, i.e., physical, electrical, and photon-irradiation interactions, are overviewed in terms of modeling, characterization techniques, and experimental evidence reported so far. In addition, some of the emerging topics — control of parameter variability in ULSI circuits caused by PID and recovery of PID — are discussed as future perspectives.
Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits
NASA Astrophysics Data System (ADS)
Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin
2009-01-01
Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.
Interconnections in ULSI: Correlation and Crosstalk
1992-12-31
basic tool is electron beam lithography of poly (methyl methacrylate) (PMMA). The two central issues to creating very dense patterns as described...direct lithographic techniques. Fig. 2: Ti/Au (2 nm/15 nm) grating with 38 nm pitch fabricated by electron beam lithography using our high contrast...G. H. Bernstein, G. Bazan, and D. A. Hill, "Spatial Density of Lines in PMMA by Electron Beam Lithography ," Journal of Vacuum Science and Technology
Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure
NASA Technical Reports Server (NTRS)
Das, Kalyan; Hall, Harvey
1999-01-01
Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.
One- and two-dimensional dopant/carrier profiling for ULSI
NASA Astrophysics Data System (ADS)
Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.
1998-11-01
Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.
In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies
NASA Astrophysics Data System (ADS)
Roy, Pradip K.; Chacon, Carlos M.; Ma, Yi; Horner, Gregory
1997-09-01
The advent of ultra-large and giga-scale-integration (ULSI/GSI) has placed considerable emphasis on the development of new gate oxides and interlevel dielectrics capable of meeting strict performance and reliability requirements. The costs and demands associated with ULSI fabrication have in turn fueled the need for cost-effective, rapid and accurate in-line characterization techniques for evaluating dielectric quality. The use of non-contact surface photovoltage characterization techniques provides cost-effective rapid feedback on dielectric quality, reducing costs through the reutilization of control wafers and the elimination of processing time. This technology has been applied to characterize most of the relevant C-V parameters, including flatband voltage (Vfb), density of interface traps (Dit), mobile charge density (Qm), oxide thickness (Tox), oxide resistivity (pox) and total charge (Qtot) for gate and interlevel (ILO) oxides. A novel method of measuring tunneling voltage by this technique on various gate oxides is discussed. For ILO, PECVD and high density plasma dielectrics, surface voltage maps are also presented. Measurements of near-surface silicon quality are described, including minority carrier generation lifetime, and examples of their application in diagnosing manufacturing problems.
2008 Gordon Research Conference on Electrodeposition [Conference summary report
DOE Office of Scientific and Technical Information (OSTI.GOV)
Moffat, Thomas P.; Gray, Nancy Ryan
2009-01-01
Electrodeposition melds key aspects of electrochemistry and materials science. In the last decade the advent of a variety of remarkable in situ characterization methods combined with the ever expanding application of wet chemical processing in high end technological endeavors has transformed the nature of the field. The 'old black magic' is giving way to the rigors of science as the electrodeposition process plays a central role in the fabrication of state-of-the-art ULSI and MEMS devices as well as being a key tool in the fabrication of novel materials and nanostructures. This year the conference will consider several timely issues suchmore » as how electrodeposition can contribute to the effective production of energy conversion devices, ranging from solar collectors to fuel cell electrocatalysts. Likewise, the challenge of building contacts and interconnects for next generation electronics will be examined over length scales ranging from individual atoms or molecules to chip stacking. Electrochemical fabrication of magnetic materials and devices as well as composite materials will also be discussed. Nucleation and growth phenomena underlie all aspect of electrochemical deposition and this year's meeting will consider the effect of both adsorbates and stress state on morphological evolution during thin film growth. A variety of new measurement methods for studying the growing electrode/electrolyte interface will also be detailed. In addition to the scheduled talks a session of short talks on late breaking news will be held Wednesday evening. There will also be at least two lively poster sessions that are essential elements of the conference and to which all attendees are encouraged to contribute. This will be 7th Electrodeposition GRC and based on past experience it is the premier 'mixing bowl' where young investigators and international experts have an extended opportunity to interact in a fun and collegial atmosphere. The afternoons provide free time for discussions coupled with mountain hikes, lake trips, and/or lively soccer, volleyball or tennis matches! We anticipate having some funds available to help graduate students and postdoctoral associates attend the meeting. The attendance of this popular conference is limited so early registration is strongly advised.« less
Precision engineering center. 1988 Annual report, Volume VI
DOE Office of Scientific and Technical Information (OSTI.GOV)
Dow, T.; Fornaro, R.; Keltie, R.
To reverse the downward trend in the balance of trade, American companies must concentrate on increasing research into new products, boosting productivity, and improving manufacturing processes. The Precision Engineering Center at North Carolina State University is a multidisciplinary research and graduate education program dedicated to providing the new technology necessary to respond to this challenge. One extremely demanding manufacturing area is the fabrication and assembly of optical systems. These systems are at the heart of such consumer products as cameras, lenses, copy machines, laser bar-code scanners, VCRs, and compact audio discs - products that the Japanese and other East Asianmore » countries are building dominance. A second critical area is the fabrication of VLSI and ULSI circuits. The tolerances required to produce the next generation of components for such systems have created the need for new approaches - approaches that could either make or break America`s competitive position. This report contains individual reports on research projects grouped into three broad areas: measurement and actuation; real-time control; precision fabrication. Separate abstracts for these articles have been indexed into the energy database.« less
Kim, Kang O; Kim, Sunjung
2016-05-01
Cu-Ag alloy interconnect is promising for ultra-large-scale integration (ULSI) microelectronic system of which device dimension keeps shrinking. In this study, seedless electrodeposition of Cu-Ag alloy directly on W diffusion barrier as interconnect technology is presented in respect of nano-nucleation control. Chemical equilibrium state of electrolyte was fundamentally investigated according to the pH of electrolyte because direct nano-nucleation of Cu-Ag alloy on W surface is challenging. Chelation behavior of Cu2+ and Ag+ ions with citrate (Cit) and ammonia ligands was dependent on the pH of electrolyte. The amount and kind of Cu- and Ag-based complexes determine the deposition rate, size, elemental composition, and surface morphology of Cu-Ag alloy nano-nuclei formed on W surface.
NASA Astrophysics Data System (ADS)
Porter, Lon Alan, Jr.
The fundamental understanding of silicon surface chemistry is an essential tool for silicon's continued dominance of the semiconductor industry in the years to come. By tapping into the vast library of organic functionalities, the synthesis of organic monolayers may be utilized to prepare interfaces, tailored to a myriad of applications ranging from silicon VLSI device optimization and MEMS to physiological implants and chemical sensors. Efforts in our lab to form stable organic monolayers on porous silicon through direct silicon-carbon linkages have resulted in several efficient functionalization methods. In the first chapter of this thesis a comprehensive review of these methods, and many others is presented. The following chapter and the appendix serve to demonstrate both potential applications and studies aimed at developing a fundamental understanding of the chemistry behind the organic functionalization of silicon surfaces. The remainder of this thesis attempts to demonstrate new methods of metal deposition onto both elemental and compound semiconductor surfaces. Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ULSI device fabrication, MEMS, and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. In order to apply this metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing, and scanning probe nanolithography has been demonstrated.
Challenge of Si/SiGe technology to optoelectronics
NASA Astrophysics Data System (ADS)
Chang, C. Y.; Jung, J. G.
1993-01-01
Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations. Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.) Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced. Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.
Sacrificial adhesive bonding: a powerful method for fabrication of glass microchips
Lima, Renato S.; Leão, Paulo A. G. C.; Piazzetta, Maria H. O.; Monteiro, Alessandra M.; Shiroma, Leandro Y.; Gobbi, Angelo L.; Carrilho, Emanuel
2015-01-01
A new protocol for fabrication of glass microchips is addressed in this research paper. Initially, the method involves the use of an uncured SU-8 intermediate to seal two glass slides irreversibly as in conventional adhesive bonding-based approaches. Subsequently, an additional step removes the adhesive layer from the channels. This step relies on a selective development to remove the SU-8 only inside the microchannel, generating glass-like surface properties as demonstrated by specific tests. Named sacrificial adhesive layer (SAB), the protocol meets the requirements of an ideal microfabrication technique such as throughput, relatively low cost, feasibility for ultra large-scale integration (ULSI), and high adhesion strength, supporting pressures on the order of 5 MPa. Furthermore, SAB eliminates the use of high temperature, pressure, or potential, enabling the deposition of thin films for electrical or electrochemical experiments. Finally, the SAB protocol is an improvement on SU-8-based bondings described in the literature. Aspects such as substrate/resist adherence, formation of bubbles, and thermal stress were effectively solved by using simple and inexpensive alternatives. PMID:26293346
NASA Astrophysics Data System (ADS)
Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.
2014-03-01
Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration.
Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects
NASA Astrophysics Data System (ADS)
Ito, Kazuhiro; Ohmori, Kazuyuki; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Asai, Koyu; Murakami, Masanori
2010-11-01
Cu interconnects have been used extensively in ULSI devices. However, large resistance-capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier (SFB) using Cu(Ti) alloy seed to 45nm-node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti-based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X-ray photoelectron spectroscopy observations for characterization of the Ti-based SFB structure were also performed. The Ti-based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.
Sporea, R. A.; Trainor, M. J.; Young, N. D.; Shannon, J. M.; Silva, S. R. P.
2014-01-01
Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial improvements in gain, noise margin, power-delay product and overall circuit robustness in digital SGT-based designs. These findings have far-reaching consequences, as LAE will form the technological basis for a variety of future developments in the biomedical, civil engineering, remote sensing, artificial skin areas, as well as wearable and ubiquitous computing, or lightweight applications for space exploration. PMID:24599023
Study on temporal and spatial variations of urban land use based on land change data
NASA Astrophysics Data System (ADS)
Jiang, Ping; Liu, Yanfang; Fan, Min; Zhang, Yang
2009-10-01
With the rapid development of urbanization, demands of urban land increase in succession, hence, to analyze temporal and spatial variations of urban land use becomes more and more important. In this paper, the principle of trend surface analysis and formula of urban land sprawl index ( ULSI) are expatiated at first, and then based on land change data of Jiayu county, the author fits quadratic trend surface by choosing urban land area as dependent variable and urbanization and GDP as independent variables from 1996 to 2006, draws isoline of trend surface and residual values; and then urban land sprawl indexes of towns are calculated on the basis of urban land area of 1996 and 2006 and distribution map of ULSI is plotted. After analyzing those results, we can conclude that there is consanguineous relationship between urban land area and urbanization, economic level etc.
Chemical-mechanical polishing of metal and dielectric films for microelectronic applications
NASA Astrophysics Data System (ADS)
Hegde, Sharath
The demand for smaller, faster devices has led the integrated circuit (IC) industry to continually increase the device density on a chip while simultaneously reducing feature dimensions. Copper interconnects and multilevel metallization (MLM) schemes were introduced to meet some of these challenges. With the employment of MLM in the ultra-large-scale-integrated (ULSI) circuit fabrication technology, repeated planarization of different surface layers with tolerance of a few nanometers is required. Presently, chemical-mechanical planarization (CMP) is the only technique that can meet this requirement. Damascene and shallow trench isolation processes are currently used in conjunction with CMP in the fabrication of multilevel copper interconnects and isolation of devices, respectively, for advanced logic and memory devices. These processes, at some stage, require simultaneous polishing of two different materials using a single slurry that offers high polish rates, high polish selectivity to one material over the other and good post-polish surface finish. Slurries containing one kind of abrasive particles do not meet most of these demands due mainly to the unique physical and chemical properties of each abrasive. However, if a composite particle is formed that takes the advantages of different abrasives while mitigating their disadvantages, the CMP performance of resulting abrasives would be compelling. It is demonstrated that electrostatic interactions between ceria and silica particles at pH 4 can be used to produce composite particles with enhanced functionality. Zeta potential measurement and TEM images used for particle characterization show the presence of such composite particles with smaller shell particles attached onto larger core particles. Slurries containing ceria (core)/silica (shell) and silica (core)/ceria (shell) composite particles when used to polish metal and dielectric films, respectively, yield both enhanced metal and dielectric film removal rates and better post-polish surface roughness values compared to those containing single kind of particles. Several arguments are proposed to explain the enhanced CMP performance with the composite abrasives. The effect of surface charge of the composite abrasive and the hardness of the core particles in the composite abrasives contained in the polishing slurry on polish rates of different films is discussed. Also, as a part of this thesis, several issues related to CMP were addressed. The planarization ability of Cu CMP slurry containing alumina coated silica particles was studied to elucidate the role of pattern geometry in affecting polish rate and also generating pattern dependent defects like dishing and erosion. Additionally, a polishing process was devised which, when viewed with the optical profilometer, eliminated surface defects including shallow and deep scratches and pits already present in a copper film. Also, molybdenum dioxide (MoO2) was evaluated as a potential abrasive for a highly reactive copper CMP slurry with potassium iodate as the oxidizing agent. Finally, the interaction of amino acid additives in ceria slurries with the silicon nitride film during STI CMP is discussed. Directions for future work have been presented at the end of the thesis.
Electroluminescence and transport properties in amorphous silicon nanostructures
NASA Astrophysics Data System (ADS)
Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco
2006-03-01
We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.
Chee, Augustus K. W.
2016-01-01
Two-dimensional dopant profiling using the secondary electron (SE) signal in the scanning electron microscope (SEM) is a technique gaining impulse for its ability to enable rapid and contactless low-cost diagnostics for integrated device manufacturing. The basis is doping contrast from electrical p-n junctions, which can be influenced by wet-chemical processing methods typically adopted in ULSI technology. This paper describes the results of doping contrast studies by energy-filtering in the SEM from silicon p-n junction specimens that were etched in ammonium fluoride solution. Experimental SE micro-spectroscopy and numerical simulations indicate that Fermi level pinning occurred on the surface of the treated-specimen, and that the doping contrast can be explained in terms of the ionisation energy integral for SEs, which is a function of the dopant concentration, and surface band-bending effects that prevail in the mechanism for doping contrast as patch fields from the specimen are suppressed. PMID:27576347
Line length dependencies in interconnect optimization
NASA Astrophysics Data System (ADS)
Kadoch, Daniel; Duane, Michael; Lee, Yohan
1997-09-01
Metal line delay has become increasingly important for ULSI devices. Numerous expressions and software tools have been developed to describe interconnect delay as a function of the geometry and layout. Although many of these formulas have line length effects, this has not been explored in depth. Most software tools are either geared towards circuit designers, or involve more complex and CPU-intensive 3D modeling. In this work, PISCES (a 2D device simulator) was used to extract metal capacitance per unit length. We extend this approach for various lengths by creating a ladder network of the RC components and simulating in SPICE, or using simple closed-form Elmore delay equations. A new key result is that there are optimum metal line width/space for a fixed pitch and height/space ratios that are metal length dependent. For metal lines shorter than about 1500 micrometers , it is better to have narrower metal lines, and for lengths less than 500 micrometers , shrinking metal height is desirable because the penalty in resistance is more than compensated by the decrease in capacitance. For longer lines, the time delay is dominated by resistance, and wider, taller lines are better. Increasing metal spacing or reducing dielectric constant were beneficial for both long and short metal lines.
Cui, Zhaohui; Zhang, Fazhi; Wang, Lei; Xu, Sailong; Guo, Xiaoxiao
2010-01-05
The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k < 3.0), meeting the development of ultra-large-scale integration (ULSI) circuits. The hydrophobicity feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.
NASA Astrophysics Data System (ADS)
Ju, Byongsun
2005-11-01
As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3N4 phase. (3.4 bonds/atom for Si3 N4 network, 2.67 bonds/atom for SiO2 network).
21 CFR 872.3600 - Partially fabricated denture kit.
Code of Federal Regulations, 2014 CFR
2014-04-01
... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Partially fabricated denture kit. 872.3600 Section... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3600 Partially fabricated denture kit. (a) Identification. A partially fabricated denture kit is a device composed of connected preformed teeth that is...
21 CFR 872.3600 - Partially fabricated denture kit.
Code of Federal Regulations, 2013 CFR
2013-04-01
... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Partially fabricated denture kit. 872.3600 Section... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3600 Partially fabricated denture kit. (a) Identification. A partially fabricated denture kit is a device composed of connected preformed teeth that is...
21 CFR 872.3600 - Partially fabricated denture kit.
Code of Federal Regulations, 2012 CFR
2012-04-01
... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Partially fabricated denture kit. 872.3600 Section... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3600 Partially fabricated denture kit. (a) Identification. A partially fabricated denture kit is a device composed of connected preformed teeth that is...
21 CFR 872.3600 - Partially fabricated denture kit.
Code of Federal Regulations, 2011 CFR
2011-04-01
... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Partially fabricated denture kit. 872.3600 Section... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3600 Partially fabricated denture kit. (a) Identification. A partially fabricated denture kit is a device composed of connected preformed teeth that is...
NASA Astrophysics Data System (ADS)
Noor Mohammad, S.
2011-10-01
Nanowires are grown by a variety of mechanisms, including vapor-liquid-solid, vapor-quasiliquid-solid or vapor-quasisolid-solid, oxide-assisted growth, and self-catalytic growth (SCG) mechanisms. A critical analysis of the suitability of self-catalyzed nanowires, as compared to other nanowires, for next-generation technology development has been carried out. Basic causes of superiority of self-catalyzed (SCG) nanowires over other nanowires have been described. Polytypism in nanowires has been studied, and a model for polytypism has been proposed. The model predicts polytypism in good agreement with available experiments. This model, together with various evidences, demonstrates lower defects, dislocations, and stacking faults in SCG nanowires, as compared to those in other nanowires. Calculations of carrier mobility due to dislocation scattering, ionized impurity scattering, and acoustic phonon scattering explain the impact of defects, dislocations, and stacking faults on carrier transports in SCG and other nanowires. Analyses of growth mechanisms for nanowire growth directions indicate SCG nanowires to exhibit the most controlled growth directions. In-depth investigation uncovers the fundamental physics underlying the control of growth direction by the SCG mechanism. Self-organization of nanowires in large hierarchical arrays is crucial for ultra large-scale integration (ULSI). Unique features and advantages of self-organized SCG nanowires, unlike other nanowires, for this ULSI have been discussed. Investigations of nanowire dimension indicate self-catalyzed nanowires to have better control of dimension, higher stability, and higher probability, even for thinner structures. Theoretical calculations show that self-catalyzed nanowires, unlike catalyst-mediated nanowires, can have higher growth rate and lower growth temperature. Nanowire and nanotube characteristics have been found also to dictate the performance of nanoelectromechanical systems. Defects, such as stacking faults, dislocations, and nanopipes, which are common in catalyst-mediated nanowires and nanotubes, adversely affect the efficiency of nanowire (nanotube) nanoelectro-mechanical devices. The influence of seed-to-seed distance and collection area radius on the self-catalyzed, self-aligned nanowire growths in large arrays of seeds has been examined. A hypothesis has been presented for this. The present results are in good agreement with experiments. These results suggest that the SCG nanowires are perhaps the best vehicles for revolutionary advancement of tomorrow's nanotechnology.
Fabricating nanowire devices on diverse substrates by simple transfer-printing methods.
Lee, Chi Hwan; Kim, Dong Rip; Zheng, Xiaolin
2010-06-01
The fabrication of nanowire (NW) devices on diverse substrates is necessary for applications such as flexible electronics, conformable sensors, and transparent solar cells. Although NWs have been fabricated on plastic and glass by lithographic methods, the choice of device substrates is severely limited by the lithographic process temperature and substrate properties. Here we report three new transfer-printing methods for fabricating NW devices on diverse substrates including polydimethylsiloxane, Petri dishes, Kapton tapes, thermal release tapes, and many types of adhesive tapes. These transfer-printing methods rely on the differences in adhesion to transfer NWs, metal films, and devices from weakly adhesive donor substrates to more strongly adhesive receiver substrates. Electrical characterization of fabricated NW devices shows that reliable ohmic contacts are formed between NWs and electrodes. Moreover, we demonstrated that Si NW devices fabricated by the transfer-printing methods are robust piezoresistive stress sensors and temperature sensors with reliable performance.
Nanocrystal thin film fabrication methods and apparatus
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk
Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
Meng, Xin; Byun, Young-Chul; Kim, Harrison S.; Lee, Joy S.; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung
2016-01-01
With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique. PMID:28774125
Vapor Grown Perovskite Solar Cells
NASA Astrophysics Data System (ADS)
Abdussamad Abbas, Hisham
Perovskite solar cells has been the fastest growing solar cell material till date with verified efficiencies of over 22%. Most groups in the world focuses their research on solution based devices that has residual solvent in the material bulk. This work focuses extensively on the fabrication and properties of vapor based perovskite devices that is devoid of solvents. The initial part of my work focuses on the detailed fabrication of high efficiency consistent sequential vapor NIP devices made using P3HT as P-type Type II heterojunction. The sequential vapor devices experiences device anomalies like voltage evolution and IV hysteresis owing to charge trapping in TiO2. Hence, sequential PIN devices were fabricated using doped Type-II heterojunctions that had no device anomalies. The sequential PIN devices has processing restriction, as organic Type-II heterojunction materials cannot withstand high processing temperature, hence limiting device efficiency. Thereby bringing the need of co-evaporation for fabricating high efficiency consistent PIN devices, the approach has no-restriction on substrates and offers stoichiometric control. A comprehensive description of the fabrication, Co-evaporator setup and how to build it is described. The results of Co-evaporated devices clearly show that grain size, stoichiometry and doped transport layers are all critical for eliminating device anomalies and in fabricating high efficiency devices. Finally, Formamidinium based perovskite were fabricated using sequential approach. A thermal degradation study was conducted on Methyl Ammonium Vs. Formamidinium based perovskite films, Formamidinium based perovskites were found to be more stable. Lastly, inorganic films such as CdS and Nickel oxide were developed in this work.
21 CFR 884.6140 - Assisted reproduction micropipette fabrication instruments.
Code of Federal Regulations, 2011 CFR
2011-04-01
... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Assisted reproduction micropipette fabrication... HUMAN SERVICES (CONTINUED) MEDICAL DEVICES OBSTETRICAL AND GYNECOLOGICAL DEVICES Assisted Reproduction Devices § 884.6140 Assisted reproduction micropipette fabrication instruments. (a) Identification...
21 CFR 884.6140 - Assisted reproduction micropipette fabrication instruments.
Code of Federal Regulations, 2010 CFR
2010-04-01
... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Assisted reproduction micropipette fabrication... HUMAN SERVICES (CONTINUED) MEDICAL DEVICES OBSTETRICAL AND GYNECOLOGICAL DEVICES Assisted Reproduction Devices § 884.6140 Assisted reproduction micropipette fabrication instruments. (a) Identification...
Luminous fabric devices for wearable low-level light therapy
Shen, Jing; Chui, Chunghin; Tao, Xiaoming
2013-01-01
In this paper, a flexible luminous fabric device was developed and investigated for wearable three-dimensionally fitted low-level light therapy. The fabric device exhibited excellent optical and thermal properties. Its optical power density and operating temperature were stable during usage for 10 hours. In vitro experiments demonstrated a significant increase in collagen production in human fibroblast irradiated by the fabric device, compared with the fibroblast without light irradiation. A series of tests were conducted for the safety of the fabric for human skin contact according to ISO standard ISO 10993-1:2003. The results showed that there was no potential hazard when the luminous fabrics were in direct contact with human skin. PMID:24409391
DOE Office of Scientific and Technical Information (OSTI.GOV)
NONE
Work under DOE Grant No. DE-FG47-93R701314, to investigate a Novel Process for Fabricating MOSFET Devices, has progressed to a point where feasibility of producing MOSFETS using Chromium Disilicide Schottky barrier junctions at Source and Drain has been shown. Devices fabricated, however, show inconsistent operating characteristics from device to device, and further work is required to overcome the defects. Some fabrication procedures have produced a relatively high, (e.g., ninety-five (95%) percent), yield of devices on a substrate which show at least some transistor action, while others have resulted in very low yield, (e.g., five (5%) percent). Consistency of results from devicemore » to device is less than desired. However, considering that the University of Nebraska at Lincoln (UNL) Electrical Engineering Fabrication Lab is not what industry can provide, it is reasonable to project that essentially one-hundred (99.99+%) percent yield should be achievable in an industrial setting because of the simplicity in the fabrication procedure.« less
Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device
NASA Astrophysics Data System (ADS)
Tripathi, Udbhav; Kaur, Ramneek
2016-05-01
Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.
Fabric Organic Electrochemical Transistors for Biosensors.
Yang, Anneng; Li, Yuanzhe; Yang, Chenxiao; Fu, Ying; Wang, Naixiang; Li, Li; Yan, Feng
2018-06-01
Flexible fabric biosensors can find promising applications in wearable electronics. However, high-performance fabric biosensors have been rarely reported due to many special requirements in device fabrication. Here, the preparation of organic electrochemical transistors (OECTs) on Nylon fibers is reported. By introducing metal/conductive polymer multilayer electrodes on the fibers, the OECTs show very stable performance during bending tests. The devices with functionalized gates are successfully used as various biosensors with high sensitivity and selectivity. The fiber-based OECTs are woven together with cotton yarns successfully by using a conventional weaving machine, resulting in flexible and stretchable fabric biosensors with high performance. The fabric sensors show much more stable signals in the analysis of moving aqueous solutions than planar devices due to a capillary effect in fabrics. The fabric devices are integrated in a diaper and remotely operated by using a mobile phone, offering a unique platform for convenient wearable healthcare monitoring. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.
2007-04-01
Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.
NASA Astrophysics Data System (ADS)
Chung, Daehan; Gray, Bonnie L.
2017-11-01
We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5-46 ml min-1.
Song, Ji-Min; Lee, Jang-Sik
2016-01-01
Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition. PMID:26739122
Fabrication and testing of unileg oxide thermoelectric device
NASA Astrophysics Data System (ADS)
Sharma, Jyothi; Purohit, R. D.; Prakash, Deep; Sinha, P. K.
2017-05-01
A prototype of oxide thermoelectric unileg device was fabricated. This device was based on only n-legs made of La doped calcium manganate. The powder was synthesized, characterised and consolidated in rectangular thermoelements. A 3×3 device was fabricated by fitting 9 rectangular bars in alumina housing and connected by silver strips. The device has been tested under large temperature difference (ΔT=480°C) using an indegenous system. An open circuit voltage of 468 mV was obtained for a nine leg `unileg' device. The device exhibits a internal resistance of ˜1Ω. The maximum power output for this nine leg device reached upto 50 mW in these working condition.
Carbon and metal nanotube hybrid structures on graphene as efficient electron field emitters
NASA Astrophysics Data System (ADS)
Heo, Kwang; Lee, Byung Yang; Lee, Hyungwoo; Cho, Dong-guk; Arif, Muhammad; Kim, Kyu Young; Choi, Young Jin; Hong, Seunghun
2016-07-01
We report a facile and efficient method for the fabrication of highly-flexible field emission devices by forming tubular hybrid structures based on carbon nanotubes (CNTs) and nickel nanotubes (Ni NTs) on graphene-based flexible substrates. By employing an infiltration process in anodic alumina oxide (AAO) templates followed by Ni electrodeposition, we could fabricate CNT-wrapped Ni NT/graphene hybrid structures. During the electrodeposition process, the CNTs served as Ni nucleation sites, resulting in a large-area array of high aspect-ratio field emitters composed of CNT-wrapped Ni NT hybrid structures. As a proof of concepts, we demonstrate that high-quality flexible field emission devices can be simply fabricated using our method. Remarkably, our proto-type field emission devices exhibited a current density higher by two orders of magnitude compared to other devices fabricated by previous methods, while maintaining its structural integrity in various bending deformations. This novel fabrication strategy can be utilized in various applications such as optoelectronic devices, sensors and energy storage devices.
Carbon and metal nanotube hybrid structures on graphene as efficient electron field emitters.
Heo, Kwang; Lee, Byung Yang; Lee, Hyungwoo; Cho, Dong-Guk; Arif, Muhammad; Kim, Kyu Young; Choi, Young Jin; Hong, Seunghun
2016-07-08
We report a facile and efficient method for the fabrication of highly-flexible field emission devices by forming tubular hybrid structures based on carbon nanotubes (CNTs) and nickel nanotubes (Ni NTs) on graphene-based flexible substrates. By employing an infiltration process in anodic alumina oxide (AAO) templates followed by Ni electrodeposition, we could fabricate CNT-wrapped Ni NT/graphene hybrid structures. During the electrodeposition process, the CNTs served as Ni nucleation sites, resulting in a large-area array of high aspect-ratio field emitters composed of CNT-wrapped Ni NT hybrid structures. As a proof of concepts, we demonstrate that high-quality flexible field emission devices can be simply fabricated using our method. Remarkably, our proto-type field emission devices exhibited a current density higher by two orders of magnitude compared to other devices fabricated by previous methods, while maintaining its structural integrity in various bending deformations. This novel fabrication strategy can be utilized in various applications such as optoelectronic devices, sensors and energy storage devices.
MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry
NASA Astrophysics Data System (ADS)
Aqariden, F.; Elsworth, J.; Zhao, J.; Grein, C. H.; Sivananthan, S.
2012-10-01
Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation-absorber-passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented.
Solving the shrinkage-induced PDMS alignment registration issue in multilayer soft lithography
NASA Astrophysics Data System (ADS)
Moraes, Christopher; Sun, Yu; Simmons, Craig A.
2009-06-01
Shrinkage of polydimethylsiloxane (PDMS) complicates alignment registration between layers during multilayer soft lithography fabrication. This often hinders the development of large-scale microfabricated arrayed devices. Here we report a rapid method to construct large-area, multilayered devices with stringent alignment requirements. This technique, which exploits a previously unrecognized aspect of sandwich mold fabrication, improves device yield, enables highly accurate alignment over large areas of multilayered devices and does not require strict regulation of fabrication conditions or extensive calibration processes. To demonstrate this technique, a microfabricated Braille display was developed and characterized. High device yield and accurate alignment within 15 µm were achieved over three layers for an array of 108 Braille units spread over a 6.5 cm2 area, demonstrating the fabrication of well-aligned devices with greater ease and efficiency than previously possible.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp
2014-12-07
Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less
Flexible and wearable electronic silk fabrics for human physiological monitoring
NASA Astrophysics Data System (ADS)
Mao, Cuiping; Zhang, Huihui; Lu, Zhisong
2017-09-01
The development of textile-based devices for human physiological monitoring has attracted tremendous interest in recent years. However, flexible physiological sensing elements based on silk fabrics have not been realized. In this paper, ZnO nanorod arrays are grown in situ on reduced graphene oxide-coated silk fabrics via a facile electro-deposition method for the fabrication of silk-fabric-based mechanical sensing devices. The data show that well-aligned ZnO nanorods with hexagonal wurtzite crystalline structures are synthesized on the conductive silk fabric surface. After magnetron sputtering of gold electrodes, silk-fabric-based devices are produced and applied to detect periodic bending and twisting. Based on the electric signals, the deformation and release processes can be easily differentiated. Human arterial pulse and respiration can also be real-time monitored to calculate the pulse rate and respiration frequency, respectively. Throat vibrations during coughing and singing are detected to demonstrate the voice recognition capability. This work may not only help develop silk-fabric-based mechanical sensing elements for potential applications in clinical diagnosis, daily healthcare monitoring and voice recognition, but also provide a versatile method for fabricating textile-based flexible electronic devices.
Fabrication of nylon/fullerene polymer memory
NASA Astrophysics Data System (ADS)
Jayan, Manuvel; Davis, Rosemary; Karthik, M. P.; Devika, K.; Kumar, G. Vijay; Sriraj, B.; Predeep, P.
2017-06-01
Two terminal Organic memories in passive matrix array form with device structure, Al/Nylon/ (Nylon+C60)/Nylon/ Al are fabricated. The current-voltage measurements showed hysteresis and the devices are thoroughly characterized for write-read-erase-read cycles. The control over the dispersion concentration, capacity of fullerene to readily accept electrons and the constant diameter of fullerene made possible uniform device fabrication with reproducible results. Scanning electron micrographs indicated that the device thickness remained uniform in the range of 19 micrometers.
(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal Metals
NASA Technical Reports Server (NTRS)
Hunt, B. D.; Barner, J. B.; Foote, M. C.; Vasquez, R. P.
1993-01-01
This work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.
A practical guide for the fabrication of microfluidic devices using glass and silicon
Iliescu, Ciprian; Taylor, Hayden; Avram, Marioara; Miao, Jianmin; Franssila, Sami
2012-01-01
This paper describes the main protocols that are used for fabricating microfluidic devices from glass and silicon. Methods for micropatterning glass and silicon are surveyed, and their limitations are discussed. Bonding methods that can be used for joining these materials are summarized and key process parameters are indicated. The paper also outlines techniques for forming electrical connections between microfluidic devices and external circuits. A framework is proposed for the synthesis of a complete glass/silicon device fabrication flow. PMID:22662101
Methods and devices for fabricating and assembling printable semiconductor elements
DOE Office of Scientific and Technical Information (OSTI.GOV)
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
Methods and devices for fabricating and assembling printable semiconductor elements
Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao
2014-03-04
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
Schottky barrier MOSFET systems and fabrication thereof
Welch, James D.
1997-01-01
(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controled switching and effecting a direction of rectification.
Schottky barrier MOSFET systems and fabrication thereof
Welch, J.D.
1997-09-02
(MOS) device systems-utilizing Schottky barrier source and drain to channel region junctions are disclosed. Experimentally derived results which demonstrate operation of fabricated N-channel and P-channel Schottky barrier (MOSFET) devices, and of fabricated single devices with operational characteristics similar to (CMOS) and to a non-latching (SRC) are reported. Use of essentially non-rectifying Schottky barriers in (MOS) structures involving highly doped and the like and intrinsic semiconductor to allow non-rectifying interconnection of, and electrical accessing of device regions is also disclosed. Insulator effected low leakage current device geometries and fabrication procedures therefore are taught. Selective electrical interconnection of drain to drain, source to drain, or source to source, of N-channel and/or P-channel Schottky barrier (MOSFET) devices formed on P-type, N-type and Intrinsic semiconductor allows realization of Schottky Barrier (CMOS), (MOSFET) with (MOSFET) load, balanced differential (MOSFET) device systems and inverting and non-inverting single devices with operating characteristics similar to (CMOS), which devices can be utilized in modulation, as well as in voltage controlled switching and effecting a direction of rectification. 89 figs.
NASA Astrophysics Data System (ADS)
Li, Yan; Qu, Shiliang; Guo, Zhongyi
2011-07-01
We have fabricated a microdiverter with a protrusion and a complicated micromixer with grid-like structures in silica glass by using water-assisted femtosecond laser ablation. When distilled water is introduced into the fabricated microchannel, the blocking and redepositing effects of ablated debris can be reduced greatly. The total length of the fabricated microfluidic devices is 6 mm without any deformation. The diameters of the fabricated microchannels can be controlled by changing the used pulse energies and the width of the laser-scanning region inside the sample. The experimental results show that it is possible to fabricate high-quality and high-aspect-ratio complicated microfluidic devices in single step without the need of using photosensitive glass or post-processing.
Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging
NASA Astrophysics Data System (ADS)
Ogawa, Shinichi; Thompson, William; Stern, Lewis; Scipioni, Larry; Notte, John; Farkas, Lou; Barriss, Louise
2010-04-01
The recently developed helium ion microscope (HIM) is now capable of 0.35 nm secondary electron (SE) mode image resolution. When low-k dielectrics or copper interconnects in ultra large scale integrated circuits (ULSI) interconnect structures were imaged in this mode, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution was available for the first time. This paper will discuss the helium ion microscope architecture and the SE imaging techniques that make the HIM observation method of particular value to the low-k dielectric and dual damascene copper interconnect technologies.
Strategies for alignment and e-beam contact to buried atomic-precision devices in Si
NASA Astrophysics Data System (ADS)
Wyrick, Jonathan; Namboodiri, Pradeep; Wang, Xiqiao; Murray, Roy; Hagmann, Joseph; Li, Kai; Stewart, Michael; Richter, Curt; Silver, Richard
STM based hydrogen lithography has proven to be a viable route to fabrication of atomic-precision electronic devices. The strength of this technique is the ability to control the lateral placement of phosphorus atoms in a single atomic layer of Si with sub-nanometer resolution. However, because of limitations in the rate at which a scanning probe can pattern a device, as well as the ultimate size of contacts that can be fabricated (on the order of a micron in length), making electrical contact to STM fabricated devices encased in Si is nontrivial. One commonly implemented solution to this challenge is to choose the exact location on a Si surface where a device is to be patterned by STM and to design fiducials to aid in navigating the probe to that predetermined location. We present results from an alternate strategy for contacting buried devices based on performing the STM lithography fabrication first, and determination of the buried structure location after the fact using topographically identifiable STM fabricated fiducials. AFM, scanning capacitance, and peak force Kelvin microscopy as well as optical microscopy techniques are evaluated as a means for device relocation and to quantify the comparative accuracy of these techniques.
Allison, Linden; Hoxie, Steven; Andrew, Trisha L
2017-06-29
Traditional textile materials can be transformed into functional electronic components upon being dyed or coated with films of intrinsically conducting polymers, such as poly(aniline), poly(pyrrole) and poly(3,4-ethylenedioxythiophene). A variety of textile electronic devices are built from the conductive fibers and fabrics thus obtained, including: physiochemical sensors, thermoelectric fibers/fabrics, heated garments, artificial muscles and textile supercapacitors. In all these cases, electrical performance and device ruggedness is determined by the morphology of the conducting polymer active layer on the fiber or fabric substrate. Tremendous variation in active layer morphology can be observed with different coating or dyeing conditions. Here, we summarize various methods used to create fiber- and fabric-based devices and highlight the influence of the coating method on active layer morphology and device stability.
Window-assisted nanosphere lithography for vacuum micro-nano-electronics
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Nannan; Institute of Electronic Engineering, Chinese Academy of Engineering Physics, Mianyang, 621900; Pang, Shucai
2015-04-15
Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided amore » new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics.« less
Fabrication of a novel carbon nanotube & graphene based device for gas detection
NASA Astrophysics Data System (ADS)
Khosravi, Yusef; Abdi, Yaser; Arzi, Ezatollah
2018-06-01
We present a novel, simple method for gas detection using a nano-device fabricated on a silicon substrate. The proposed method is based on changing the density of state (DOS) of a graphene sheet during the gas absorption. Fabrication of the carbon nanotube (CNT) and graphene based device for gas detection includes silicon micro machining and the growth of vertically aligned CNTs. Field emission between the as-grown CNTs and the graphene sheet which is placed on top of the CNTs is measured at a liquid nitrogen temperature to obtain the DOS of the structure in different gas environments. The measured local DOS of the structure using the fabricated device showed that each gas had its own signatory spectrum. We believe that this method will open up a new and simple way of fabricating a portable gas spectroscope.
Solid-state curved focal plane arrays
NASA Technical Reports Server (NTRS)
Jones, Todd (Inventor); Nikzad, Shouleh (Inventor); Hoenk, Michael (Inventor)
2010-01-01
The present invention relates to curved focal plane arrays. More specifically, the present invention relates to a system and method for making solid-state curved focal plane arrays from standard and high-purity devices that may be matched to a given optical system. There are two ways to make a curved focal plane arrays starting with the fully fabricated device. One way, is to thin the device and conform it to a curvature. A second way, is to back-illuminate a thick device without making a thinned membrane. The thick device is a special class of devices; for example devices fabricated with high purity silicon. One surface of the device (the non VLSI fabricated surface, also referred to as the back surface) can be polished to form a curved surface.
TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Syme, A; Lin, H; Rubio-Sanchez, J
Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devicesmore » were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.« less
Fabricating biomedical origami: a state-of-the-art review
Johnson, Meredith; Chen, Yue; Hovet, Sierra; Xu, Sheng; Wood, Bradford; Ren, Hongliang; Tokuda, Junichi; Tse, Zion Tsz Ho
2018-01-01
Purpose Origami-based biomedical device design is an emerging technology due to its ability to be deployed from a minimal foldable pattern to a larger volume. This paper aims to review state-of-the-art origami structures applied in the medical device field. Methods Publications and reports of origami structure related to medical device design from the past 10 years are reviewed and categorized according to engineering specifications, including the application field, fabrication material, size/volume, deployment method, manufacturability, and advantages. Results This paper presents an overview of the biomedical applications of devices based on origami structures, including disposable sterilization covers, cardiac catheterization, stent grafts, encapsulation and microsurgery, gastrointestinal microsurgery, laparoscopic surgical grippers, microgrippers, microfluidic devices, and drug delivery. Challenges in terms of materials and fabrication, assembly, modeling and computation design, and clinical adoptability are discussed at the end of this paper to provide guidance for future origami-based design in the medical device field. Conclusion Concepts from origami can be used to design and develop novel medical devices. Origami-based medical device design is currently progressing, with researchers improving design methods, materials, fabrication techniques, and folding efficiency. PMID:28260164
Fabricating biomedical origami: a state-of-the-art review.
Johnson, Meredith; Chen, Yue; Hovet, Sierra; Xu, Sheng; Wood, Bradford; Ren, Hongliang; Tokuda, Junichi; Tse, Zion Tsz Ho
2017-11-01
Origami-based biomedical device design is an emerging technology due to its ability to be deployed from a minimal foldable pattern to a larger volume. This paper aims to review state-of-the-art origami structures applied in the medical device field. Publications and reports of origami structure related to medical device design from the past 10 years are reviewed and categorized according to engineering specifications, including the application field, fabrication material, size/volume, deployment method, manufacturability, and advantages. This paper presents an overview of the biomedical applications of devices based on origami structures, including disposable sterilization covers, cardiac catheterization, stent grafts, encapsulation and microsurgery, gastrointestinal microsurgery, laparoscopic surgical grippers, microgrippers, microfluidic devices, and drug delivery. Challenges in terms of materials and fabrication, assembly, modeling and computation design, and clinical adoptability are discussed at the end of this paper to provide guidance for future origami-based design in the medical device field. Concepts from origami can be used to design and develop novel medical devices. Origami-based medical device design is currently progressing, with researchers improving design methods, materials, fabrication techniques, and folding efficiency.
Thermoelectric fabrics: toward power generating clothing.
Du, Yong; Cai, Kefeng; Chen, Song; Wang, Hongxia; Shen, Shirley Z; Donelson, Richard; Lin, Tong
2015-03-23
Herein, we demonstrate that a flexible, air-permeable, thermoelectric (TE) power generator can be prepared by applying a TE polymer (e.g. poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)) coated commercial fabric and subsequently by linking the coated strips with a conductive connection (e.g. using fine metal wires). The poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) coated fabric shows very stable TE properties from 300 K to 390 K. The fabric device can generate a TE voltage output (V) of 4.3 mV at a temperature difference (ΔT) of 75.2 K. The potential for using fabric TE devices to harvest body temperature energy has been discussed. Fabric-based TE devices may be useful for the development of new power generating clothing and self-powered wearable electronics.
NASA Astrophysics Data System (ADS)
Joseph, Jose; Singh, Shiv Govind; Vanjari, Siva Rama Krishna
2018-01-01
We present a successful fabrication and characterization of a capacitive micromachined ultrasonic transducer (CMUT) with SU-8 as the membrane material. The goal of this research is to develop a post-CMOS compatible CMUT that can be monolithically integrated with the CMOS circuitry. The fabrication is based on a simple, three mask process, with all wet etching steps involved so that the device can be realized with minimal laboratory conditions. The maximum temperature involved in the whole process flow was 140°C, and hence, it is post-CMOS compatible. The fabricated device exhibited a resonant frequency of 835 kHz with bandwidth 62 kHz, when characterized in air. The pull-in and snapback characteristics of the device were analyzed. The influence of membrane radius on the center frequency and bandwidth was also experimentally evaluated by fabricating CMUTs with membrane radius varying from 30 to 54 μm with an interval of 4 μm. These devices were vibrating at frequencies from 5.2 to 1.8 MHz with an average Q-factor of 23.41. Acoustic characterization of the fabricated devices was performed in air, demonstrating the applicability of SU-8 CMUTs in airborne applications.
2015-11-25
1 Dielectric coating thermal stabilization during GaAs-based laser fabrication for improved device yield 1 Michael K. Connors a, c), Jamal...side contact metal, underlying SiO2 dielectric coating, and semiconductor surface. A thermal-anneal procedure developed for the fabrication of GaAs...slab coupled optical waveguide (SCOW) ridge waveguide devices stabilizes the SiO2 dielectric coating, by means of outgassing and stress reduction
Han, Yu Long; Wang, Wenqi; Hu, Jie; Huang, Guoyou; Wang, Shuqi; Lee, Won Gu; Lu, Tian Jian; Xu, Feng
2013-12-21
We presented a benchtop technique that can fabricate reconfigurable, three-dimensional (3D) microfluidic devices made from a soft paper-polymer composite. This fabrication approach can produce microchannels at a minimal width of 100 μm and can be used to prototype 3D microfluidic devices by simple bending and stretching. The entire fabrication process can be finished in 2 hours on a laboratory bench without the need for special equipment involved in lithography. Various functional microfluidic devices (e.g., droplet generator and reconfigurable electronic circuit) were prepared using this paper-polymer hybrid microfluidic system. The developed method can be applied in a wide range of standard applications and emerging technologies such as liquid-phase electronics.
NASA Astrophysics Data System (ADS)
Lu, J.-C.; Liao, W.-H.; Tung, Y.-C.
2012-07-01
Polydimethylsiloxane (PDMS) microfluidic device is one of the most essential techniques that advance microfluidics research in recent decades. PDMS is broadly exploited to construct microfluidic devices due to its unique and advantageous material properties. To realize more functionalities, PDMS microfluidic devices with multi-layer architectures, especially those with sandwiched membranes, have been developed for various applications. However, existing alignment methods for device fabrication are mainly based on manual observations, which are time consuming, inaccurate and inconsistent. This paper develops a magnet-assisted alignment method to enhance device-level alignment accuracy and precision without complicated fabrication processes. In the developed alignment method, magnets are embedded into PDMS layers at the corners of the device. The paired magnets are arranged in symmetric positions at each PDMS layer, and the magnetic attraction force automatically pulls the PDMS layers into the aligned position during assembly. This paper also applies the method to construct a practical microfluidic device, a tunable chaotic micromixer. The results demonstrate the successful operation of the device without failure, which suggests the accurate alignment and reliable bonding achieved by the method. Consequently, the fabrication method developed in this paper is promising to be exploited to construct various membrane-sandwiched PDMS microfluidic devices with more integrated functionalities to advance microfluidics research.
CMOS compatible thin-film ALD tungsten nanoelectromechanical devices
NASA Astrophysics Data System (ADS)
Davidson, Bradley Darren
This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different WALD fabrication technologies two generations of 2-terminal WALD NEMS switches have been developed. These devices have functional gap heights of 30-50 nm, and actuation voltages typically ranging from 3--5 Volts. Via the extension of a two terminal WALD technology novel 3-terminal WALD NEMS devices were developed. These devices have actuation voltages ranging from 1.5--3 Volts, reliabilities in excess of 2 million cycles, and have been designed to be the fundamental building blocks for WALD NEMS complementary inverters. Through the development of these devices several advancements in the modeling and design of thin-film NEMS devices were achieved. A new model was developed to better characterize pre-actuation currents commonly measured for NEMS switches with nano-scale gate-to-source gap heights. The developed model is an extension of the standard field-emission model and considers the electromechanical response, and electric field effects specific to thin-film NEMS switches. Finally, a multi-physics FEM/FD based model was developed to simulate the dynamic behavior of 2 or 3-terminal electrostatically actuated devices whose electrostatic domains have an aspect ratio on the order of 10-3. The model uses a faux-Lagrangian finite difference method to solve Laplaces equation in a quasi-statatically deforming domain. This model allows for the numerical characterization and design of thin-film NEMS devices not feasible using typical non-specialized BEM/FEM based software. Using this model several novel and feasible designs for fixed-fixed 3-terminal WALD NEMS switches capable for the construction of complementary inverters were discovered.
Early Detection of Prostate Cancer
2007-01-01
pads and the external traces. Figure 13 shows the copper board with SMA connectors which were used to test the SH-SAW devices. The frequency...Figure 11. 3-dimensional view of the final device. Figure 12. Fabricated SH-SAW devices cut on blue tape. Figure 13. SH-SAW devices on copper board...Figure 12. Fabricated SH-SAW devices cut on blue tape. 46 Figure 13. SH-SAW devices on copper board with SMA connectors. 47 Figure 14
Optical systems fabricated by printing-based assembly
Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred J; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung
2014-05-13
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Optical systems fabricated by printing-based assembly
Rogers, John [Champaign, IL; Nuzzo, Ralph [Champaign, IL; Meitl, Matthew [Durham, NC; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL; Motala, Michael [Champaign, IL; Ahn, Jong-Hyun [Suwon, KR; Park, Sang-II [Savoy, IL; Yu,; Chang-Jae, [Urbana, IL; Ko, Heung-Cho [Gwangju, KR; Stoykovich,; Mark, [Dover, NH; Yoon, Jongseung [Urbana, IL
2011-07-05
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Optical systems fabricated by printing-based assembly
Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong -Hyun; Park, Sang -Il; Yu, Chang -Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung
2015-08-25
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Optical systems fabricated by printing-based assembly
Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung
2017-03-21
Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.
Fabricating a hybrid imaging device
NASA Technical Reports Server (NTRS)
Wadsworth, Mark (Inventor); Atlas, Gene (Inventor)
2003-01-01
A hybrid detector or imager includes two substrates fabricated under incompatible processes. An array of detectors, such as charged-coupled devices, are formed on the first substrate using a CCD fabrication process, such as a buried channel or peristaltic process. One or more charge-converting amplifiers are formed on a second substrate using a CMOS fabrication process. The two substrates are then bonded together to form a hybrid detector.
Electron beam fabrication of a microfluidic device for studying submicron-scale bacteria
2013-01-01
Background Controlled restriction of cellular movement using microfluidics allows one to study individual cells to gain insight into aspects of their physiology and behaviour. For example, the use of micron-sized growth channels that confine individual Escherichia coli has yielded novel insights into cell growth and death. To extend this approach to other species of bacteria, many of whom have dimensions in the sub-micron range, or to a larger range of growth conditions, a readily-fabricated device containing sub-micron features is required. Results Here we detail the fabrication of a versatile device with growth channels whose widths range from 0.3 μm to 0.8 μm. The device is fabricated using electron beam lithography, which provides excellent control over the shape and size of different growth channels and facilitates the rapid-prototyping of new designs. Features are successfully transferred first into silicon, and subsequently into the polydimethylsiloxane that forms the basis of the working microfluidic device. We demonstrate that the growth of sub-micron scale bacteria such as Lactococcus lactis or Escherichia coli cultured in minimal medium can be followed in such a device over several generations. Conclusions We have presented a detailed protocol based on electron beam fabrication together with specific dry etching procedures for the fabrication of a microfluidic device suited to study submicron-sized bacteria. We have demonstrated that both Gram-positive and Gram-negative bacteria can be successfully loaded and imaged over a number of generations in this device. Similar devices could potentially be used to study other submicron-sized organisms under conditions in which the height and shape of the growth channels are crucial to the experimental design. PMID:23575419
Method for integrating microelectromechanical devices with electronic circuitry
Montague, Stephen; Smith, James H.; Sniegowski, Jeffry J.; McWhorter, Paul J.
1998-01-01
A method for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry.
Hamid, Q; Snyder, J; Wang, C; Timmer, M; Hammer, J; Guceri, S; Sun, W
2011-09-01
In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 °C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 °C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.
Co-deposition methods for the fabrication of organic optoelectronic devices
Thompson, Mark E.; Liu, Zhiwei; Wu, Chao
2016-09-06
A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.
Bringing order to the world of nanowire devices by phase shift lithography.
Subannajui, Kittitat; Güder, Firat; Zacharias, Margit
2011-09-14
Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.
Design and fabrication of high-performance diamond triple-gate field-effect transistors
Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo
2016-01-01
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm−1) is much higher than that of the planar-type device (45.2 mA mm−1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec−1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications. PMID:27708372
Fabrication of comb-drive actuators for straining nanostructured suspended graphene.
Goldsche, Matthias; Verbiest, G J; Khodkov, Tymofiy; Sonntag, Jens; von den Driesch, Nils; Buca, Dan; Stampfer, Christoph
2018-06-20
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a chromium mask. Crucially, we implement a gold layer to reduce the device resistance from ≈51.6 kΩ to ≈236 Ω at room temperature in order to allow for strain-dependent transport measurements. The graphene is integrated by mechanically transferring it directly onto the actuator using a polymethylmethacrylate membrane. Importantly, the integrated graphene can be nanostructured afterwards to optimize device functionality. The minimum feature size of the structured suspended graphene is 30~nm, which allows for interesting device concepts such as mechanically-tunable nanoconstrictions. Finally, we characterize the fabricated devices by measuring the Raman spectrum as well as the a mechanical resonance frequency of an integrated graphene sheet for different strain values. © 2018 IOP Publishing Ltd.
NASA Astrophysics Data System (ADS)
Brenckle, Mark
Recent efforts in bioelectronics and biooptics have led to a shift in the materials and form factors used to make medical devices, including high performance, implantable, and wearable sensors. In this context, biopolymer-based devices must be processed to interface the soft, curvilinear biological world with the rigid, inorganic world of traditional electronics and optics. This poses new material-specific fabrication challenges in designing such devices, which in turn requires further understanding of the fundamental physical behaviors of the materials in question. As a biopolymer, silk fibroin protein has remarkable promise in this space, due to its bioresorbability, mechanical strength, optical clarity, ability to be reshaped on the micro- and nano-scale, and ability to stabilize labile compounds. Application of this material to devices at the biotic/abiotic interface will require the development of fabrication techniques for nano-patterning, lithography, multilayer adhesion, and transfer printing in silk materials. In this work, we address this need through fundamental study of the thermal and diffusional properties of silk protein as it relates to these fabrication strategies. We then leverage these properties to fabricate devices well suited to the biotic/abiotic interface in three areas: shelf-ready sensing, implantable transient electronics, and wearable biosensing. These example devices will illustrate the advantages of silk in this class of bioelectronic and biooptical devices, from fundamentals through application, and contribute to a silk platform for the development of future devices that combine biology with high technology.
Sopori, Bhushan
2014-05-27
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
Clear Castable Polyurethane Elastomer for Fabrication of Microfluidic Devices
Domansky, Karel; Leslie, Daniel C.; McKinney, James; Fraser, Jacob P.; Sliz, Josiah D.; Hamkins-Indik, Tiama; Hamilton, Geraldine A.; Bahinski, Anthony; Ingber, Donald E.
2013-01-01
Polydimethylsiloxane (PDMS) has numerous desirable properties for fabricating microfluidic devices, including optical transparency, flexibility, biocompatibility, and fabrication by casting; however, partitioning of small hydrophobic molecules into the bulk of PDMS hinders industrial acceptance of PDMS microfluidic devices for chemical processing and drug development applications. Here we describe an attractive alternative material that is similar to PDMS in terms of optical transparency, flexibility and castability, but that is also resistant to absorption of small hydrophobic molecules. PMID:23954953
Fast Printing and In-Situ Morphology Observation of Organic Photovoltaics using Slot-Die Coating
NASA Astrophysics Data System (ADS)
Liu, Feng; Ferdous, Sunzida; Wang, Cheng; Hexamer, Alexander; Russell, Thomas; Cheng Wang Collaboration; Thomas Russell Team
2014-03-01
The solvent-processibility of polymer semiconductors is a key advantage for the fabrication of large area, organic bulk-heterojunction (BHJ) photovoltaic devices. Most reported power conversion efficiencies (PCE) are based on small active areas, fabricated by spin-coating technique. In general, this does not reflect device fabrication in an industrial setting. To realize commercial viability, devices need to be fabricated in a roll-to-roll fashion. The evolution of the morphology associated with different processing parameters, like solvent choice, concentration and temperature, needs to be understood and controlled. We developed a mini slot-die coater, to fabricate BHJ devices using various low band gap polymers mixed with phenyl-C71-butyric acid methyl ester (PCBM). Solvent choice, processing additives, coating rate and coating temperatures were used to control the final morphology. Efficiencies comparable to lab-setting spin-coated devices are obtained. The evolution of the morphology was monitored by in situ scattering measurements, detecting the onset of the polymer chain packing in solution that led to the formation of a fibrillar network in the film.
Fabricating a hybrid imaging device having non-destructive sense nodes
NASA Technical Reports Server (NTRS)
Wadsworth, Mark (Inventor); Atlas, Gene (Inventor)
2001-01-01
A hybrid detector or imager includes two substrates fabricated under incompatible processes. An array of detectors, such as charged-coupled devices, are formed on the first substrate using a CCD fabrication process, such as a buried channel or peristaltic process. One or more charge-converting amplifiers are formed on a second substrate using a CMOS fabrication process. The two substrates are then bonded together to form a hybrid detector.
2016-09-27
contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various... Contacts 7 2.5 Packaging 11 3. Conclusions 12 4. References 13 Appendix. Detailed Fabrication Process 15 List of Symbols, Abbreviations, and...regions in violet (overlaying previous patterns) .......7 Fig. 6 Mask 4: intrinsic device contact window regions in orange (overlaying previous
Method for fabricating transistors using crystalline silicon devices on glass
McCarthy, Anthony M.
1997-01-01
A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.
Method for fabricating transistors using crystalline silicon devices on glass
McCarthy, A.M.
1997-09-02
A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.
Graphene devices based on laser scribing technology
NASA Astrophysics Data System (ADS)
Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling
2018-04-01
Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.
Microdynamic Devices Fabricated on Silicon-On-Sapphire Substrates.
Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors . The high voltage stand-off...a consequence, the electrostatically driven devices, micromotors , can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.
Review of Polyimides Used in the Manufacturing of Micro Systems
NASA Technical Reports Server (NTRS)
Wilson, William C.; Atkinson, Gary M.
2007-01-01
Since their invention, polyimides have found numerous uses in MicroElectroMechanical Systems (MEMS) technology. Polyimides can act as photoresist, sacrificial layers, structural layers, and even as a replacement for silicon as the substrate during MEMS fabrication. They enable fabrication of both low and high aspect ratio devices. Polyimides have been used to fabricate expendable molds and reusable flexible molds. Development of a variety of devices that employ polyimides for sensor applications has occurred. Micro-robotic actuator applications include hinges, thermal actuators and residual stress actuators. Currently, polyimides are being used to create new sensors and devices for aerospace applications. This paper presents a review of some of the many uses of polyimides in the development of MEMS devices, including a new polyimide based MEMS fabrication process.
A wearable fabric-based speech-generating device: system design and case demonstration.
Fleury, Amanda; Wu, Gloria; Chau, Tom
2018-05-26
Existing speech generating devices (SGD) often require caregiver intervention for setup and positioning, and thus limit opportunities for spontaneous social interaction. The advent of conductive fabrics presents an opportunity to render SGDs wearable, thus persistently available. Our goal was to design and test a wearable SGD incorporating resistive textile-based switches for a nonverbal pediatric participant with vision impairment. Quad-key fabric keypads were designed using two conductive fabrics in combination with felt and mesh insulators. The keypad with the most repeatable low force activations and the least cross-talk among keys was chosen for implementation in a wrist-worn, four-message textile SGD. The fabric-based SGD was used by a nonverbal pediatric participant for two one-week analysis periods, alternating with the user's current device for usage reference. Data were derived from usage logs, parent questionnaires and an end-of-study participant interview. The best performing keypad consisted of two layers of woven conductive fabrics and one layer of insulating felt with 10 mm apertures. Communicative interactions were higher with the fabric-based SGD, particularly at school. Unprompted initiation of communication was observed only with the fabric-based SGD. The persistent availability of the textile solution, along with esthetic appeal likely contributed to its utilization. While the participant preferred the fabric-based SGD, the parent opted for the iPod alternative, citing enhanced message intelligibility. Fabric-based SGDs are a new alternative to conventional SGD designs using rigid electronics. As such, tactile differentiability of keys, device wearability and esthetic personalization may be promising advantages for pediatric users. Implications for rehabilitation Fabric-based switches may be a promising alternative to conventional electro-mechanical switches for the control of speech-generating devices, offering functional (e.g., comfort and tactile differentiability), expressive (e.g., non-stigmatizing textile integration) and esthetic (e.g., colors and textures) appeal. The material combination of two layers of woven conductive material and one insulating layer of felt with 10 mm diameter apertures seems to provide a fabric-based keypad suitable for pediatric use, requiring low-force activation and minimal cross-talk among buttons. Fabric-based devices offer advantages of tactile differentiability and thus may be particularly suited to individuals with vision impairments. Wearable textile SGDs can be persistently available and may thus increase opportunities for communication.
2015-03-10
AFRL-OSR-VA-TR-2015-0080 Biosensing and Bioprocessing Devices in Living Cells Domitilla Del Vecchio MASSACHUSETTS INSTITUTE OF TECHNOLOGY Final...Of Biosensing And Bioprocessing Devices In Living Cells FA9550-12-1-0129 D. Del Vecchio Massachusetts Institute of Technology -- 77 Massachusetts...research is to develop quantitative techniques for the de novo design and fabrication of biosensing devices in living cells . Such devices will be entirely
Jiang, Dongyue; Park, Sung-Yong
2016-05-21
Technical advances in electrowetting-on-dielectric (EWOD) over the past few years have extended our attraction to three-dimensional (3D) devices capable of providing more flexibility and functionality with larger volumetric capacity than conventional 2D planar ones. However, typical 3D EWOD devices require complex and expensive fabrication processes for patterning and wiring of pixelated electrodes that also restrict the minimum droplet size to be manipulated. Here, we present a flexible single-sided continuous optoelectrowetting (SCOEW) device which is not only fabricated by a spin-coating method without the need for patterning and wiring processes, but also enables light-driven 3D droplet manipulations. To provide photoconductive properties, previous optoelectrowetting (OEW) devices have used amorphous silicon (a-Si) typically fabricated through high-temperature processes over 300 °C such as CVD or PECVD. However, most of the commercially-available flexible substrates such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) experience serious thermal deformation under such high-temperature processes. Because of this compatibility issue of conventional OEW devices with flexible substrates, light-driven 3D droplet manipulations have not yet been demonstrated on flexible substrates. Our study overcomes this compatibility issue by using a polymer-based photoconductive material, titanium oxide phthalocyanine (TiOPc) and thus SCOEW devices can be simply fabricated on flexible substrates through a low-cost, spin-coating method. In this paper, analytical studies were conducted to understand the effects of light patterns on static contact angles and EWOD forces. For experimental validations of our study, flexible SCOEW devices were successfully fabricated through the TiOPc-based spin-coating method and light-driven droplet manipulations (e.g. transportation, merging, and splitting) have been demonstrated on various 3D terrains such as inclined, vertical, upside-down, and curved surfaces. Our flexible SCOEW technology offers the benefits of device simplicity, flexibility, and functionality over conventional EWOD and OEW devices by enabling optical droplet manipulations on a 3D featureless surface.
NASA Technical Reports Server (NTRS)
Crawford, Gregory P.; Li, Liuliu
2005-01-01
Some improvements have been made in the formulation of holographically formed polymer-dispersed liquid crystals (H-PDLCs) and in the fabrication of devices made from these materials, with resulting improvements in performance. H-PDLCs are essentially volume Bragg gratings. Devices made from H-PDLCs function as electrically switchable reflective filters. Heretofore, it has been necessary to apply undesirably high drive voltages in order to switch H-PDLC devices. Many scientific papers on H-PDLCs and on the potential utility of H-PDLC devices for display and telecommunication applications have been published. However, until now, little has been published about improving quality control in synthesis of H-PDLCs and fabrication of H-PDLC devices to minimize (1) spatial nonuniformities within individual devices, (2) nonuniformities among nominally identical devices, and (3) variations in performance among nominally identical devices. The improvements reported here are results of a research effort directed partly toward solving these quality-control problems and partly toward reducing switching voltages. The quality-control improvements include incorporation of a number of process controls to create a relatively robust process, such that the H-PDLC devices fabricated in this process are more nearly uniform than were those fabricated in a prior laboratory-type process. The improved process includes ultrasonic mixing, ultrasonic cleaning, the use of a micro dispensing technique, and the use of a bubble press.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Richardson, Mandek; Sankaranarayanan, S. K. R. S.; Bhethanabotla, V. R.
2015-03-01
The authors report the design and fabrication of a surface acoustic wave (SAW) device with improved power transfer due to modification of its delay path. Typically, SAW delay-line devices suffer from relatively high insertion loss (IL) (similar to 10-30 dB). Our approach is to incorporate an array of microcavities, having square cross-sectional area (lambda/2 x lambda/2) and filled with tantalum, within the delay path to maximize acoustic confinement to the surface and reduce IL. To determine the effectiveness of the cavities without expending too many resources and to explain trends found in actual devices, a finite element model of amore » SAW device with tantalum filled cavities having various depths was utilized. For each depth simulated, IL was decreased compared to a standard SAW device. Microcavities 2.5 mu m deep filled with tantalum showed the best performance (Delta IL = 17.93 dB). To validate simulated results, the authors fabricated a SAW device on ST 90 degrees-X quartz with microcavities etched into its delay path using deep reactive ion etching and filled with tantalum. Measurement of fabricated devices showed inclusion of tantalum filled microcavities increased power transfer compared to a device without cavities. (C) 2015 American Vacuum Society.« less
Control and automation of multilayered integrated microfluidic device fabrication.
Kipper, Sarit; Frolov, Ludmila; Guy, Ortal; Pellach, Michal; Glick, Yair; Malichi, Asaf; Knisbacher, Binyamin A; Barbiro-Michaely, Efrat; Avrahami, Dorit; Yavets-Chen, Yehuda; Levanon, Erez Y; Gerber, Doron
2017-01-31
Integrated microfluidics is a sophisticated three-dimensional (multi layer) solution for high complexity serial or parallel processes. Fabrication of integrated microfluidic devices requires soft lithography and the stacking of thin-patterned PDMS layers. Precise layer alignment and bonding is crucial. There are no previously reported standards for alignment of the layers, which is mostly performed using uncontrolled processes with very low alignment success. As a result, integrated microfluidics is mostly used in academia rather than in the many potential industrial applications. We have designed and manufactured a semiautomatic Microfluidic Device Assembly System (μDAS) for full device production. μDAS comprises an electrooptic mechanical system consisting of four main parts: optical system, smart media holder (for PDMS), a micropositioning xyzθ system and a macropositioning XY mechanism. The use of the μDAS yielded valuable information regarding PDMS as the material for device fabrication, revealed previously unidentified errors, and enabled optimization of a robust fabrication process. In addition, we have demonstrated the utilization of the μDAS technology for fabrication of a complex 3 layered device with over 12 000 micromechanical valves and an array of 64 × 64 DNA spots on a glass substrate with high yield and high accuracy. We increased fabrication yield from 25% to about 85% with an average layer alignment error of just ∼4 μm. It also increased our protein expression yields from 80% to over 90%, allowing us to investigate more proteins per experiment. The μDAS has great potential to become a valuable tool for both advancing integrated microfluidics in academia and producing and applying microfluidic devices in the industry.
Method for integrating microelectromechanical devices with electronic circuitry
Montague, S.; Smith, J.H.; Sniegowski, J.J.; McWhorter, P.J.
1998-08-25
A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry. The method comprises the steps of forming each MEM device within a cavity below a device surface of the substrate; encapsulating the MEM device prior to forming electronic circuitry on the substrate; and releasing the MEM device for operation after fabrication of the electronic circuitry. Planarization of the encapsulated MEM device prior to formation of the electronic circuitry allows the use of standard processing steps for fabrication of the electronic circuitry. 13 figs.
Fabrication and characterization of active nanostructures
NASA Astrophysics Data System (ADS)
Opondo, Noah F.
Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.
Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices.
Brower, Kara; White, Adam K; Fordyce, Polly M
2017-01-27
Microfluidic systems have enabled powerful new approaches to high-throughput biochemical and biological analysis. However, there remains a barrier to entry for non-specialists who would benefit greatly from the ability to develop their own microfluidic devices to address research questions. Particularly lacking has been the open dissemination of protocols related to photolithography, a key step in the development of a replica mold for the manufacture of polydimethylsiloxane (PDMS) devices. While the fabrication of single height silicon masters has been explored extensively in literature, fabrication steps for more complicated photolithography features necessary for many interesting device functionalities (such as feature rounding to make valve structures, multi-height single-mold patterning, or high aspect ratio definition) are often not explicitly outlined. Here, we provide a complete protocol for making multilayer microfluidic devices with valves and complex multi-height geometries, tunable for any application. These fabrication procedures are presented in the context of a microfluidic hydrogel bead synthesizer and demonstrate the production of droplets containing polyethylene glycol (PEG diacrylate) and a photoinitiator that can be polymerized into solid beads. This protocol and accompanying discussion provide a foundation of design principles and fabrication methods that enables development of a wide variety of microfluidic devices. The details included here should allow non-specialists to design and fabricate novel devices, thereby bringing a host of recently developed technologies to their most exciting applications in biological laboratories.
Pentecost, Amber M; Martin, R Scott
2015-01-01
A new method of fabricating all-polystyrene devices with integrated electrodes and fluidic tubing is described. As opposed to expensive polystyrene (PS) fabrication techniques that use hot embossing and bonding with a heated lab press, this approach involves solvent-based etching of channels and lamination-based bonding of a PS cover, all of which do not need to occur in a clean room. PS has been studied as an alternative microchip substrate to PDMS, as it is more hydrophilic, biologically compatible in terms of cell adhesion, and less prone to absorption of hydrophobic molecules. The etching/lamination-based method described here results in a variety of all-PS devices, with or without electrodes and tubing. To characterize the devices, micrographs of etched channels (straight and intersected channels) were taken using confocal and scanning electron microscopy. Microchip-based electrophoresis with repetitive injections of fluorescein was conducted using a three-sided PS (etched pinched, twin-tee channel) and one-sided PDMS device. Microchip-based flow injection analysis, with dopamine and NO as analytes, was used to characterize the performance of all-PS devices with embedded tubing and electrodes. Limits of detection for dopamine and NO were 130 nM and 1.8 μM, respectively. Cell immobilization studies were also conducted to assess all-PS devices for cellular analysis. This paper demonstrates that these easy to fabricate devices can be attractive alternative to other PS fabrication methods for a wide variety of analytical and cell culture applications.
Micro-optical elements produced using an photo-embossing technique in photopolymers
NASA Astrophysics Data System (ADS)
O'Neill, Feidhlim T.; Rowsome, Ita C.; Carr, Alun J.; Daniels, Stephen M.; Gleeson, Michael R.; Kelly, John V.; Close, Ciara; Lawrence, Justin R.; Sheridan, John T.
2005-09-01
Micro-optical devices are very important in current high-tech consumer items. The development of future products depends on both the evolution of fabrication techniques and on the development of new low cost mass production methods. Polymers offer ease of fabrication and low cost and are therefore excellent materials for the development of micro-optical devices. Polymer optical devices include passive optical elements, such as microlens arrays and waveguides, as well as active devices such as polymer based lasers. One of the most important areas of micro-optics is that of microlens design, manufacture and testing. The wide diversity of fabrication methods used for the production of these elements indicates their importance. One of these fabrication techniques is photo-embossing. The use of the photo-embossing technique and a photopolymer holographic recording material will be examined in this paper. A discussion of current attempts to model the fabrication process and a review of the experimental method will be given.
NASA Astrophysics Data System (ADS)
Verma, Payal; Juneja, Sucheta; Savelyev, Dmitry A.; Khonina, Svetlana N.; Gopal, Ram
2016-04-01
This paper presents design and fabrication of a 1-DOF (degree-of-freedom) drive mode and 2-DOF sense mode micro-gyroscope. It is an inherently robust structure and offers a high sense frequency bandwidth. The proposed design utilizes resonance of the1-DOF drive mode oscillator and employs dynamic amplification concept in sense modes to increase the sensitivity while maintaining robustness. The 2-DOF in the sense direction renders the device immune to process imperfections and environmental effects. The design is simulated using FEA software (CoventorWare®). The device is designed considering process compatibility with SU-8 based UV-LIGA process, which is an economical fabrication technique. The complete fabrication process is presented along with SEM images of the fabricated device. The device has 9 µm thick Nickel as the key structural layer with an overall reduced key structure size of 2.2 mm by 2.1 mm.
Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices.
Alapan, Yunus; Hasan, Muhammad Noman; Shen, Richang; Gurkan, Umut A
2015-05-01
Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing.
Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices
Shen, Richang; Gurkan, Umut A.
2016-01-01
Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing. PMID:27512530
Reliability Improvement By Adopting Ti-barrier Metal For Porous Low-k ILD Structure
NASA Astrophysics Data System (ADS)
Sakata, A.; Yamashita, S.; Omoto, S.; Hatano, M.; Wada, J.; Higashi, K.; Yamaguchi, H.; Yosho, T.; Imamizu, K.; Yamada, M.; Hasunuma, M.; Takahashi, S.; Yamada, A.; Hasegawa, T.; Motoyama, K.; Tagami, M.; Kitano, T.; Kaneko, H.
2007-10-01
Titanium (Ti) has been proposed as an excellent barrier metal (BM) material for ULSI's Cu metallization from the stand point of two characteristics. One is the oxidation property, especially for the porous low-k ILD materials for 45 nm node device; the other is the interface behavior of Ti with Cu. Both stress induced voiding (SIV) suppression and one order longer electromigration (EM) lifetime were obtained by the adoption of Ti-BM instead of the conventional Tantalum (Ta)-BM. SIV failure is accelerated in porous low-k ILD by the following steps; 1) BM oxidation by the absorbed moisture in porous low-k ILD, 2) Adhesion degradation caused by the BM oxidation results in micro delamination of Cu film (void nucleation), 3) Void growth induced by the stress gradient in the Cu interconnect. It has been considered that the small volume change of Ti oxidation and the existence of metallic Ti-O solid-solution phase would be the reason for control of moisture penetration from the low-k ILD materials. In addition, Ti/Cu intermetallic reaction and the segregation of Ti atoms at Cu grain boundaries suppress Cu migration at BM/Cu interface and Cu grain boundaries, respectively. This is supported by higher EM activation energy of Cu line with Ti-BM than that with Ta-BM. These phenomena contribute to higher interconnect reliability.
Capability of Sputtered Micro-patterned NiTi Thick Films
NASA Astrophysics Data System (ADS)
Bechtold, Christoph; Lima de Miranda, Rodrigo; Quandt, Eckhard
2015-09-01
Today, most NiTi devices are manufactured by a combination of conventional metal fabrication steps, e.g., melting, extrusion, cold working, etc., and are subsequently structured by high accuracy laser cutting. This combination has been proven to be very successful; however, there are several limitations to this fabrication route, e.g., in respect to the fabrication of more complex device designs, device miniaturization or the combination of different materials for the integration of further functionality. These issues have to be addressed in order to develop new devices and applications. The fabrication of micro-patterned films using magnetron sputtering, UV lithography, and wet etching has great potential to overcome limitations of conventional device manufacturing. Due to its fabrication characteristics, this method allows the production of devices with complex designs, high structural accuracy, smooth edge profile, at layer thicknesses up to 75 µm. The aim of this study is to present recent developments in the field of NiTi thin film technology, its advantages and limitations, as well as new possible applications in the medical and in non-medical fields. These developments include among others NiTi scaffold structures covered with NiTi membranes for their potential use as filters, heart valve components or aneurysm treatments, as well as micro-actuators for consumable electronics or automotive applications.
NASA Astrophysics Data System (ADS)
Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa
2018-02-01
We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.
Improved Design of Optical MEMS Using the SUMMiT Fabrication Process
DOE Office of Scientific and Technical Information (OSTI.GOV)
Michalicek, M.A.; Comtois, J.H.; Barron, C.C.
This paper describes the design and fabrication of optical Microelectromechanical Systems (MEMS) devices using the Sandia Ultra planar Multilevel MEMS Technology (SUMMiT) fabrication process. This state of the art process, offered by Sandia National Laboratories, provides unique and very advantageous features which make it ideal for optical devices. This enabling process permits the development of micromirror devices with near ideal characteristics which have previously been unrealizable in standard polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces, unique post-process metallization, and the best active surface area to date.
ERIC Educational Resources Information Center
Jablonski, Erin L.; Vogel, Brandon M.; Cavanagh, Daniel P.; Beers, Kathryn L.
2010-01-01
A method to fabricate microfluidic devices and an experimental protocol to model intravascular gas embolism for undergraduate laboratories are presented. The fabrication process details how to produce masters on glass slides; these masters serve as molds to pattern channels in an elastomeric polymer that can be adhered to a substrate, resulting in…
Effect of post-annealing on sputtered MoS2 films
NASA Astrophysics Data System (ADS)
Wong, W. C.; Ng, S. M.; Wong, H. F.; Cheng, W. F.; Mak, C. L.; Leung, C. W.
2017-12-01
Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.
Simple graphene chemiresistors as pH sensors: fabrication and characterization
NASA Astrophysics Data System (ADS)
Lei, Nan; Li, Pengfei; Xue, Wei; Xu, Jie
2011-10-01
We report the fabrication and characterization of a simple gate-free graphene device as a pH sensor. The graphene sheets are made by mechanical exfoliation. Platinum contact electrodes are fabricated with a mask-free process using a focused ion beam and then expanded by silver paint. Annealing is used to improve the electrical contact. The experiment on the fabricated graphene device shows that the resistance of the device decreases linearly with increasing pH values (in the range of 4-10) in the surrounding liquid environment. The resolution achieved in our experiments is approximately 0.3 pH in alkali environment. The sensitivity of the device is calculated as approximately 2 kΩ pH-1. The simple configuration, miniaturized size and integration ability make graphene-based sensors promising candidates for future micro/nano applications.
76 FR 70117 - Notice of Intent To Grant an Exclusive License; Voltage Networking, LLC
Federal Register 2010, 2011, 2012, 2013, 2014
2011-11-10
... dielectric layer and device made therefrom''; Patent No. 6,541,288 entitled ``Method of determining... sacrificial spacer layer''; Patent No. 7,442,577 entitled ``Method of fabricating a patterned device using sacrificial spacer layer''; Patent No. 7,678,593 entitled ``Method of fabricating optical device using...
Aita-Holmes, Cynthia; Liacouras, Peter; Wilson, William O; Grant, Gerald T
2015-08-01
An extraoral device was fabricated to assist a clarinet player with Bell's palsy. The device was fabricated by using stereophotogrammetry, digital design, and additive manufacturing technologies. Copyright © 2015 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.
Management of overdenture abutments health by an innovative cleaning aid
Mall, Priyanka; Singh, Kamleshwar; Singh, Saumyendra Vikram; Agrawal, Kaushal Kishor; Siddharth, Ramashanker; Chand, Pooran
2012-01-01
This article describes a method for fabrication of a custom-made device for cleaning dome-shaped overdenture abutments. A kid toothbrush and a rubber cup were used for fabrication of a prophylactic device. After regular use of this device periodontal health status of the overdenture abutments patients improved satisfactorily. PMID:23230248
NASA Astrophysics Data System (ADS)
Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon
2018-02-01
Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.
Day, Sarah Jane; Riley, Shaun Patrick
2018-02-01
The evolution of three-dimensional printing into prosthetics has opened conversations about the availability and cost of prostheses. This report will discuss how a prosthetic team incorporated additive manufacture techniques into the treatment of a patient with a partial hand amputation to create and test a unique assistive device which he could use to hold his French horn. Case description and methods: Using a process of shape capture, photogrammetry, computer-aided design and finite element analysis, a suitable assistive device was designed and tested. The design was fabricated using three-dimensional printing. Patient satisfaction was measured using a Pugh's Matrix™, and a cost comparison was made between the process used and traditional manufacturing. Findings and outcomes: Patient satisfaction was high. The three-dimensional printed devices were 56% cheaper to fabricate than a similar laminated device. Computer-aided design and three-dimensional printing proved to be an effective method for designing, testing and fabricating a unique assistive device. Clinical relevance CAD and 3D printing techniques can enable devices to be designed, tested and fabricated cheaper than when using traditional techniques. This may lead to improvements in quality and accessibility.
V2O5 thin film deposition for application in organic solar cells
NASA Astrophysics Data System (ADS)
Arbab, Elhadi A. A.; Mola, Genene Tessema
2016-04-01
Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.
NASA Astrophysics Data System (ADS)
Park, Janghoon; Min, Yoonki; Lee, Dongjin
2018-04-01
An organic thin film back-gated transistor (OBGT) was fabricated and characterized. The gate electrode was printed on the back side of substrate, and the dielectric layer was omitted by substituting the dielectric layer with the polyimide (PI) film substrate. Roll-to-roll (R2R) gravure printing, doctor blading, and drop casting methods were used to fabricate the OBGT. The printed OBGT device shows better performance compared with an OTFT device based on dielectric layer of BaTiO3. Additionally, a calendering process enhanced the performance by a factor of 3 to 7 (mobility: 0.016 cm2/V.s, on/off ratio: 9.17×103). A bending test was conducted to confirm the flexibility and durability of the OBGT device. The results show the fabricated device endures 20000-cyclic motions. The realized OBGT device was successfully fabricated and working, which is meaningful for production engineering from the viewpoint of process development.
Nanoimprint lithography for nanodevice fabrication
NASA Astrophysics Data System (ADS)
Barcelo, Steven; Li, Zhiyong
2016-09-01
Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.
NASA Astrophysics Data System (ADS)
Fatima, N.; Ahmed, M. M.; Karimov, Kh. S.
2017-11-01
This study reports the fabrication of organic field effect transistors (OFETs) using 3-[ethyl[4-[(4-nitrophenyl)azo]phenyl]amino]propanenitrile, usually known as Orange-Dye 25 (OD) and its composite with sugar. The study investigated the heat- and humidity-dependent electrical characteristics of the fabricated devices. Fabrication was carried out from the aqueous solution of the materials using different gravity conditions, i.e., at positive (normal) gravity (+1 g) and at negative gravity (-1 g). A thin layer (10-15 μm) of OD or OD:sugar was deposited by drop-casting on pre-fabricated drain and source silver (Ag) electrodes having 30 μm separation and 2 mm length followed by aluminum (Al) thermal evaporation to achieve a Schottky barrier. Devices fabricated using OD at -1 g were more sensitive in capacitance-temperature and impedance-humidity relationships than those fabricated at +1 g. Moreover, OFETs fabricated at -1 g using OD:sugar offered capacitance-temperature sensitivity much higher than the devices fabricated at +1 g. It has been observed that, in the drop-casting method, the properties of OFETs are dependent upon gravity as well as the solution composition employed for channel definition.
Liu, Lihui; Shang, Wenjuan; Han, Chao; Zhang, Qing; Yao, Yao; Ma, Xiaoqian; Wang, Minghao; Yu, Hongtao; Duan, Yu; Sun, Jie; Chen, Shufen; Huang, Wei
2018-02-28
Graphene as one of the most promising transparent electrode materials has been successfully applied in organic light-emitting diodes (OLEDs). However, traditional poly(methyl methacrylate) (PMMA) transfer method usually results in hardly removed polymeric residues on the graphene surface, which induces unwanted leakage current, poor diode behavior, and even device failure. In this work, we proposed a facile and efficient two-in-one method to obtain clean graphene and fabricate OLEDs, in which the poly(9,9-di-n-octylfluorene-alt-(1,4-phenylene-(4-sec-butylphenyl)imino)-1,4-phenylene) (TFB) layer was inserted between the graphene and PMMA film both as a protector during the graphene transfer and a hole-injection layer in OLEDs. Finally, green OLED devices were successfully fabricated on the PMMA-free graphene/TFB film, and the device luminous efficiency was increased from 64.8 to 74.5 cd/A by using the two-in-one method. Therefore, the proposed two-in-one graphene transfer method realizes a high-efficient graphene transfer and device fabrication process, which is also compatible with the roll-to-roll manufacturing. It is expected that this work can enlighten the design and fabrication of the graphene-based optoelectronic devices.
Coaxial cable stripping device facilitates RF cabling fabrication
NASA Technical Reports Server (NTRS)
Hughes, R. S.; Tobias, R. A.
1967-01-01
Coaxial cable stripping device assures clean, right angled shoulder for RF cable connector fabrication. This method requires minimal skill and creates a low voltage standing wave ratio and mechanical stability in the interconnecting RF Cables.
Pixels, Imagers and Related Fabrication Methods
NASA Technical Reports Server (NTRS)
Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)
2014-01-01
Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.
Pixels, Imagers and Related Fabrication Methods
NASA Technical Reports Server (NTRS)
Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)
2016-01-01
Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.
Smart textile device using ion polymer metal compound.
Nakamura, Taro; Ihara, Tadashi
2013-01-01
We have developed a smart textile device that detects angular displacement of attached surface using ion polymer metal compound. The device was composed of ion polymer metal compound (IPMC) which was fabricated from Nafion resin by heat-press and chemical gold plating. The generated voltage from IPMC was measured as a function of bending angle. Fabricated IPMC device was weaved into a cotton cloth and multidirectional movements were detected.
Orthotic devices using lightweight composite materials
NASA Technical Reports Server (NTRS)
Harrison, E., Jr.
1983-01-01
Potential applications of high strength, lightweight composite technology in the orthotic field were studied. Several devices were designed and fabricated using graphite-epoxy composite technology. Devices included shoe plates, assistive walker devices, and a Simes prosthesis reinforcement. Several other projects having medical application were investigated and evaluations were made of the potential for use of composite technology. A seat assembly was fabricated using sandwich construction techniques for the Total Wheelchair Project.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Madan, A
2005-03-01
The work described in this report uses a modified pulsed plasma-enhanced chemical vapor deposition (PECVD) technique that has been successfully developed to fabricate state-of-the-art nc-Si materials and devices. Specifically, we have achieved the following benchmarks: nc SiH device with an efficiency of 8% achieved at a deposition rate of {approx}1 A/s; nc SiH device with an efficiency of 7% achieved at a deposition rate of {approx}5 A/s; large-area technology developed using pulsed PECVD with uniformity of +/-5% over 25 cm x 35 cm; devices have been fabricated in the large-area system (part of Phase 3); an innovative stable four-terminal (4-T)more » tandem-junction device of h> 9% fabricated. (Note that the 4-T device was fabricated with existing technology base and with further development can reach stabilized h of 12%); and with improvement in Voc {approx} 650 mV, from the current value of 480 mV can lead to stable 4-T device with h>16%. Toward this objective, modified pulsed PECVD was developed where layer- by-layer modification of nc-SiH has been achieved. (Note that due to budget cuts at NREL, this project was curtailed by about one year.)« less
NASA Astrophysics Data System (ADS)
Chang, Hung-Pin; Qian, Jiangyuan; Bachman, Mark; Congdon, Philip; Li, Guann-pyng
2002-07-01
A novel planarization technique, compressive molding planarization (CMP) is developed for implementation of a multi-layered micro coil device. Applying CMP and other micromachining techniques, a multi-layered micro coil device has been designed and fabricated, and its use in the magnetic micro actuators for hard disk drive applications has been demonstrated, showing that it can produce milli-Newton of magnetic force suitable for driving a micro actuator. The novel CMP technique can be equally applicable in other MEMS devices fabrication to ease the process integration for the complicated structure.
Integrated digital metamaterials enables ultra-compact optical diodes
Shen, Bing; Polson, Randy; Menon, Rajesh
2015-01-01
We applied nonlinear optimization to design integrated digital metamaterials in silicon for unidirectional energy flow. Two devices, one for each polarization state, were designed, fabricated, and characterized. Both devices offer comparable or higher transmission efficiencies and extinction ratios, are easier to fabricate, exhibit larger bandwidths and are more tolerant to fabrication errors, when compared to alternatives. Furthermore, each device footprint is only 3μm × 3μm, which is the smallest optical diode ever reported. To illustrate the versatility of digital metamaterials, we also designed a polarization-independent optical diode.
Tsuo, Y. Simon; Deb, Satyen K.
1990-01-01
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.
Fabrication and characterization of nanowalls CdS/dye sensitized solar cells
NASA Astrophysics Data System (ADS)
Abdulelah, Haider; Ali, Basil; Mahdi, M. A.; Hassan, J. J.; Al-Taay, H. F.; Jennings, P.
2017-06-01
A microwave assisted chemical bath deposition (MA-CBD) was adopted to fabricate nanowalls CdS nanocrystalline thin film. Nanomaterials (such as nanowalls structure) have attracted significant attention due to their fascinating properties and unique applications, especially in optoelectronic nanodevices. Here we describe the fabrication of dye sensitized solar cells (DSSCs) based nanowalls cadmium sulfide (CdS) nanocrystalline thin films. The surface morphology, crystalline structure, and optical properties of the prepared nanocrystalline thin films are investigated. Rhodamine B, Malachite green, Eosin methylene blue, and Cresyl violet perchlorate dyes are used to fabricate the DSSCS devices. Current-voltage (I-V) characteristics show that the nanowall CdS/Eosin methylene blue device is the highest conversion efficiency of 0.89% under 100 mW/cm2. However, heat treatment of the fabricated solar cells causes significant enhancement in the output of all devices.
Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography
NASA Astrophysics Data System (ADS)
Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin
2017-12-01
Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH3 and NO2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.
Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography.
Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin
2017-12-01
Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH 3 and NO 2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.
Fabrication Of SNS Weak Links On SOS Substrates
NASA Technical Reports Server (NTRS)
Hunt, Brian D.
1995-01-01
High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).
A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles.
Ismailov, Usein; Ismailova, Esma; Takamatsu, Seiichi
2017-03-13
Today, wearable electronics devices combine a large variety of functional, stretchable, and flexible technologies. However, in many cases, these devices cannot be worn under everyday conditions. Therefore, textiles are commonly considered the best substrate to accommodate electronic devices in wearable use. In this paper, we describe how to selectively pattern organic electroactive materials on textiles from a solution in an easy and scalable manner. This versatile deposition technique enables the fabrication of wearable organic electronic devices on clothes.
Aloe vera Derived Activated High-Surface-Area Carbon for Flexible and High-Energy Supercapacitors.
Karnan, M; Subramani, K; Sudhan, N; Ilayaraja, N; Sathish, M
2016-12-28
Materials which possess high specific capacitance in device configuration with low cost are essential for viable application in supercapacitors. Herein, a flexible high-energy supercapacitor device was fabricated using porous activated high-surface-area carbon derived from aloe leaf (Aloe vera) as a precursor. The A. vera derived activated carbon showed mesoporous nature with high specific surface area of ∼1890 m 2 /g. A high specific capacitance of 410 and 306 F/g was achieved in three-electrode and symmetric two-electrode system configurations in aqueous electrolyte, respectively. The fabricated all-solid-state device showed a high specific capacitance of 244 F/g with an energy density of 8.6 Wh/kg. In an ionic liquid electrolyte, the fabricated device showed a high specific capacitance of 126 F/g and a wide potential window up to 3 V, which results in a high energy density of 40 Wh/kg. Furthermore, it was observed that the activation temperature has significant role in the electrochemical performance, as the activated sample at 700 °C showed best activity than the samples activated at 600 and 800 °C. The electron microscopic images (FE-SEM and HR-TEM) confirmed the formation of pores by the chemical activation. A fabricated supercapacitor device in ionic liquid with 3 V could power up a red LED for 30 min upon charging for 20s. Also, it is shown that the operation voltage and capacitance of flexible all-solid-state symmetric supercapacitors fabricated using aloe-derived activated carbon could be easily tuned by series and parallel combinations. The performance of fabricated supercapacitor devices using A. vera derived activated carbon in all-solid-state and ionic liquid indicates their viable applications in flexible devices and energy storage.
Hybrid method of making an amorphous silicon P-I-N semiconductor device
Moustakas, Theodore D.; Morel, Don L.; Abeles, Benjamin
1983-10-04
The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.
NASA Astrophysics Data System (ADS)
Wu, Mingching; Fang, Weileun
2005-03-01
This work integrates multi-depth DRIE etching, trench-refilled molding, two poly-Si layers MUMPs and bulk releasing to improve the variety and performance of MEMS devices. In summary, the present fabrication process, named MOSBE II, has three merits. First, this process can monolithically fabricate and integrate poly-Si thin-film structures with different thicknesses and stiffnesses, such as the flexible spring and the stiff mirror plate. Second, multi-depth structures, such as vertical comb electrodes, are available from the DRIE processes. Third, a cavity under the micromachined device is provided by the bulk silicon etching process, so that a large out-of-plane motion is allowed. In application, an optical scanner driven by the self-aligned vertical comb actuator was demonstrated. The poly-Si micromachined components fabricated by MOSBE II can further integrate with the MUMPs devices to establish a more powerful MOEMS platform.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Carr, John A.; Nalwa, Kanwar S.; Mahadevapuram, Rakesh
Herein, the implications of silicone contamination found in solution-processed conjugated polymer solar cells are explored. Similar to a previous work based on molecular cells, we find this contamination as a result of the use of plastic syringes during fabrication. However, in contrast to the molecular case, we find that glass-syringe fabricated devices give superior performance than plastic-syringe fabricated devices in poly(3-hexylthiophene)-based cells. We find that the unintentional silicone addition alters the solution’s wettability, which translates to a thinner, less absorbent film on spinning. With many groups studying the effects of small-volume additives, this work should be closely considered as manymore » of these additives may also directly alter the solutions’ wettability, or the amount of silicone dissolved off the plastic syringes, or both. Thereby, film thickness, which generally is not reported in detail, can vary significantly from device to device.« less
Harmonic surface acoustic waves on gallium nitride thin films.
Justice, Joshua; Lee, Kyoungnae; Korakakis, D
2012-08-01
SAW devices operating at the fundamental frequency and the 5th, 7th, 9th, and 11th harmonics have been designed, fabricated, and measured. Devices were fabricated on GaN thin films on sapphire substrates, which were grown via metal organic vapor phase epitaxy (MOVPE). Operating frequencies of 230, 962, 1338, 1720, and 2100 MHz were achieved with devices that had a fundamental wavelength, lambda0 = 20 μm. Gigahertz operation is realized with relatively large interdigital transducers that do not require complicated submicrometer fabrication techniques. SAW devices fabricated on the GaN/sapphire bilayer have an anisotropic propagation when the wavelength is longer than the GaN film thickness. It is shown that for GaN thin films, where kh(GaN) > 10 (k = 2pi/lambda and h(GaN) = GaN film thickness), effects of the substrate on the SAW propagation are eliminated. Bulk mode suppression at harmonic operation is also demonstrated.
Liquid crystals for organic transistors (Conference Presentation)
NASA Astrophysics Data System (ADS)
Hanna, Jun-ichi; Iino, Hiroaki
2016-09-01
Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.
Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon
2014-05-21
We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.
Fabricating with crystalline Si to improve superconducting detector performance
NASA Astrophysics Data System (ADS)
Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.
2017-05-01
We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.
Optical Simulation and Fabrication of Pancharatnam (Geometric) Phase Devices from Liquid Crystals
NASA Astrophysics Data System (ADS)
Gao, Kun
Pancharatnam made clear the concept of a phase-only device based on changes in the polarization state of light. A device of this type is sometimes called a circular polarization grating because of the polarization states of interfering light beams used to fabricate it by polarization holography. Here, we will call it a Pancharatnam (geometric) phase device to emphasize the fact that the phase of diffracted light does not have a discontinuous periodic profile but changes continuously. In this dissertation, using simulations and experiments, we have successfully demonstrated a 90% diffraction efficiency based on the Pancharatnam phase deflector (PPD) with the dual-twist structure. Unlike the conventional Pancharatnam phase deflector (c-PPD) limited to small diffraction angles, our work demonstrates that a device with a structural periodicity near the wavelength of light is highly efficient at deflecting light to large angles. Also, from a similar fabrication procedure, we have made an ultra-compact non-mechanical zoom lens system based on the Pancharatnam phase lens (PPL) with a low f-number and high efficiency. The wavelength dependence on the image quality is evaluated and shown to be satisfactory from red light to near-infrared machine vision systems. A demonstration device is shown with a 4x zoom ratio at a 633 nm wavelength. The unique characteristic of these devices is made possible through the use of azo-dye photoalignment materials to align a liquid crystal polymer (reactive mesogens). Furthermore, the proposed dual-twist design and fabrication opens the possibility for making a high-efficiency beam-steering device, a lens with an f-number less than 1.0, as well as a wide range of other potential applications in the optical and display industry. The details of simulation, fabrication, and characterization of these devices are shown in this dissertation.
NASA Astrophysics Data System (ADS)
Huang, Jinsong
This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C60 based device accidentally. The high PM factor makes it good candidate for photo detector. The high gain was assigned to the trapped-charge induced enhanced-injection at C60/PEDOT:PSS interface.
Fabrication of flexible, multimodal light-emitting devices for wireless optogenetics
Huang, Xian; Jung, Yei Hwan; Al-Hasani, Ream; Omenetto, Fiorenzo G.
2014-01-01
Summary The rise of optogenetics provides unique opportunities to advance materials and biomedical engineering as well as fundamental understanding in neuroscience. This protocol describes the fabrication of optoelectronic devices for studying intact neural systems. Unlike optogenetic approaches that rely on rigid fiber optics tethered to external light sources, these novel devices utilize flexible substrates to carry wirelessly powered microscale, inorganic light-emitting diodes (μ-ILEDs) and multimodal sensors inside the brain. We describe the technical procedures for construction of these devices, their corresponding radiofrequency power scavengers, and their implementation in vivo for experimental application. In total, the timeline of the procedure, including device fabrication, implantation, and preparation to begin in vivo experimentation, can be completed in approximately 3–8 weeks. Implementation of these devices allows for chronic (tested up to six months), wireless optogenetic manipulation of neural circuitry in animals experiencing behaviors such as social interaction, home cage, and other complex natural environments. PMID:24202555
Veluswamy, Pandiyarasan; Sathiyamoorthy, Suhasini; Khan, Faizan; Ghosh, Aranya; Abhijit, Majumdar; Hayakawa, Yasuhiro; Ikeda, Hiroya
2017-02-10
The central idea of this paper is to innovate a new approach for the development of wearable device materials through the coating of cotton fabric with ZnO and Sb-/Ag-/ZnO composites. The study was designed in order to have a clear understanding of the role of ZnO as well as the modified composite thereof under investigation. Cotton fabric with uniform ZnO/ZnO-composite layers on the surface was successfully synthesized via a solvothermal method. The growth behaviors were investigated by comparing ZnO and ZnO-composites. The structural, morphological, chemical states, optical, electrical and thermopower properties of these fabrics were studied. Nanostructured ZnO-composite fabric had enhanced UV shielding with a value of 83.96. It is found that the ZnO-composite fabrics have increased electrical conductivity. The thermopower value of the ZnO-composite fabric could reach 471.9μVK -1 . Such materials are anticipated to be worthwhile as wearable electronic devices and as protective textiles. Copyright © 2016 Elsevier Ltd. All rights reserved.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Michalicek, M.A.; Comtois, J.H.; Barron, C.C.
This paper describes the design and characterization of several types of micromirror devices to include process capabilities, device modeling, and test data resulting in deflection versus applied potential curves. These micromirror devices are the first to be fabricated in the state-of-the-art four-level planarized polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics which have previously been unrealizable in standard three-layer polysilicon processes. This paper describes such characteristics as elevated address electrodes, individual address wiring beneath the device, planarized mirror surfaces usingmore » Chemical Mechanical Polishing (CMP), unique post-process metallization, and the best active surface area to date. This paper presents the design, fabrication, modeling, and characterization of several variations of Flexure-Beam (FBMD) and Axial-Rotation Micromirror Devices (ARMD). The released devices are first metallized using a standard sputtering technique relying on metallization guards and masks that are fabricated next to the devices. Such guards are shown to enable the sharing of bond pads between numerous arrays of micromirrors in order to maximize the number of on-chip test arrays. The devices are modeled and then empirically characterized using a laser interferometer setup located at the Air Force Institute of Technology (AFIT) at Wright-Patterson AFB in Dayton, Ohio. Unique design considerations for these devices and the process are also discussed.« less
Jung, Ji Hyung; Kim, Sunghwan; Kim, Hyeonjung; Park, Jongnam; Oh, Joon Hak
2015-10-07
Nano-floating gate memory (NFGM) devices are transistor-type memory devices that use nanostructured materials as charge trap sites. They have recently attracted a great deal of attention due to their excellent performance, capability for multilevel programming, and suitability as platforms for integrated circuits. Herein, novel NFGM devices have been fabricated using semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites and pentacene as a p-type semiconductor. Monodisperse CoFe2O4 NPs with different diameters have been synthesized by thermal decomposition and embedded in NFGM devices. The particle size effects on the memory performance have been investigated in terms of energy levels and particle-particle interactions. CoFe2O4 NP-based memory devices exhibit a large memory window (≈73.84 V), a high read current on/off ratio (read I(on)/I(off)) of ≈2.98 × 10(3), and excellent data retention. Fast switching behaviors are observed due to the exceptional charge trapping/release capability of CoFe2O4 NPs surrounded by the oleate layer, which acts as an alternative tunneling dielectric layer and simplifies the device fabrication process. Furthermore, the NFGM devices show excellent thermal stability, and flexible memory devices fabricated on plastic substrates exhibit remarkable mechanical and electrical stability. This study demonstrates a viable means of fabricating highly flexible, high-performance organic memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Floating electrode dielectrophoresis.
Golan, Saar; Elata, David; Orenstein, Meir; Dinnar, Uri
2006-12-01
In practice, dielectrophoresis (DEP) devices are based on micropatterned electrodes. When subjected to applied voltages, the electrodes generate nonuniform electric fields that are necessary for the DEP manipulation of particles. In this study, electrically floating electrodes are used in DEP devices. It is demonstrated that effective DEP forces can be achieved by using floating electrodes. Additionally, DEP forces generated by floating electrodes are different from DEP forces generated by excited electrodes. The floating electrodes' capabilities are explained theoretically by calculating the electric field gradients and demonstrated experimentally by using test-devices. The test-devices show that floating electrodes can be used to collect erythrocytes (red blood cells). DEP devices which contain many floating electrodes ought to have fewer connections to external signal sources. Therefore, the use of floating electrodes may considerably facilitate the fabrication and operation of DEP devices. It can also reduce device dimensions. However, the key point is that DEP devices can integrate excited electrodes fabricated by microtechnology processes and floating electrodes fabricated by nanotechnology processes. Such integration is expected to promote the use of DEP devices in the manipulation of nanoparticles.
Plastic masters-rigid templates for soft lithography.
Desai, Salil P; Freeman, Dennis M; Voldman, Joel
2009-06-07
We demonstrate a simple process for the fabrication of rigid plastic master molds for soft lithography directly from (poly)dimethysiloxane devices. Plastics masters (PMs) provide a cost-effective alternative to silicon-based masters and can be easily replicated without the need for cleanroom facilities. We have successfully demonstrated the use of plastics micromolding to generate both single and dual-layer plastic structures, and have characterized the fidelity of the molding process. Using the PM fabrication technique, world-to-chip connections can be integrated directly into the master enabling devices with robust, well-aligned fluidic ports directly after molding. PMs provide an easy technique for the fabrication of microfluidic devices and a simple route for the scaling-up of fabrication of robust masters for soft lithography.
An in Vitro Twist Fatigue Test of Fabric Stent-Grafts Supported by Z-Stents vs. Ringed Stents.
Lin, Jing; Guidoin, Robert; Du, Jia; Wang, Lu; Douglas, Graeham; Zhu, Danjie; Nutley, Mark; Perron, Lygia; Zhang, Ze; Douville, Yvan
2016-02-16
Whereas buckling can cause type III endoleaks, long-term twisting of a stent-graft was investigated here as a mechanism leading to type V endoleak or endotension. Two experimental device designs supported with Z-stents having strut angles of 35° or 45° were compared to a ringed control under accelerated twisting. Damage to each device was assessed and compared after different durations of twisting, with focus on damage that may allow leakage. Stent-grafts with 35° Z-stents had the most severe distortion and damage to the graft fabric. The 45° Z-stents caused less fabric damage. However, consistent stretching was still seen around the holes for sutures, which attach the stents to the graft fabric. Larger holes may become channels for fluid percolation through the wall. The ringed stent-graft had the least damage observed. Stent apexes with sharp angles appear to be responsible for major damage to the fabrics. Device manufacturers should consider stent apex angle when designing stent-grafts, and ensure their devices are resistant to twisting.
An in Vitro Twist Fatigue Test of Fabric Stent-Grafts Supported by Z-Stents vs. Ringed Stents
Lin, Jing; Guidoin, Robert; Du, Jia; Wang, Lu; Douglas, Graeham; Zhu, Danjie; Nutley, Mark; Perron, Lygia; Zhang, Ze; Douville, Yvan
2016-01-01
Whereas buckling can cause type III endoleaks, long-term twisting of a stent-graft was investigated here as a mechanism leading to type V endoleak or endotension. Two experimental device designs supported with Z-stents having strut angles of 35° or 45° were compared to a ringed control under accelerated twisting. Damage to each device was assessed and compared after different durations of twisting, with focus on damage that may allow leakage. Stent-grafts with 35° Z-stents had the most severe distortion and damage to the graft fabric. The 45° Z-stents caused less fabric damage. However, consistent stretching was still seen around the holes for sutures, which attach the stents to the graft fabric. Larger holes may become channels for fluid percolation through the wall. The ringed stent-graft had the least damage observed. Stent apexes with sharp angles appear to be responsible for major damage to the fabrics. Device manufacturers should consider stent apex angle when designing stent-grafts, and ensure their devices are resistant to twisting. PMID:28787913
Microcrystalline silicon thin-film transistors for large area electronic applications
NASA Astrophysics Data System (ADS)
Chan, Kah-Yoong; Bunte, Eerke; Knipp, Dietmar; Stiebig, Helmut
2007-11-01
Thin-film transistors (TFTs) based on microcrystalline silicon (µc-Si:H) exhibit high charge carrier mobilities exceeding 35 cm2 V-1 s-1. The devices are fabricated by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 °C. The fabrication process of the µc-Si:H TFTs is similar to the low temperature fabrication of amorphous silicon TFTs. The electrical characteristics of the µc-Si:H-based transistors will be presented. As the device charge carrier mobility of short channel TFTs is limited by the contacts, the influence of the drain and source contacts on the device parameters including the device charge carrier mobility and the device threshold voltage will be discussed. The experimental data will be described by a modified standard transistor model which accounts for the contact effects. Furthermore, the transmission line method was used to extract the device parameters including the contact resistance. The modified standard transistor model and the transmission line method will be compared in terms of the extracted device parameters and contact resistances.
Fabrication of high T(sub c) superconductor thin film devices: Center director's discretionary fund
NASA Technical Reports Server (NTRS)
Sisk, R. C.
1992-01-01
This report describes a technique for fabricating superconducting weak link devices with micron-sized geometries etched in laser ablated Y1Ba2Cu3O(x) (YBCO) thin films. Careful placement of the weak link over naturally occurring grain boundaries exhibited in some YBCO thin films produces Superconducting Quantum Interference Devices (SQUID's) operating at 77 K.
ERIC Educational Resources Information Center
Wang, Bo; Lin, Zhiqiang; Wang, Min
2015-01-01
Paper-based microfluidic devices (µPAD) are a burgeoning platform of microfluidic analysis technology. The method described herein is for use in undergraduate and high school chemistry laboratories. A simple and convenient µPAD was fabricated by easy patterning of filter paper using a permanent marker pen. The usefulness of the device was…
Kim, Yeong-Gyu; Tak, Young Jun; Kim, Hee Jun; Kim, Won-Gi; Yoo, Hyukjoon; Kim, Hyun Jae
2018-04-03
We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.
Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization.
Liu, Feng; Ferdous, Sunzida; Wan, Xianjian; Zhu, Chenhui; Schaible, Eric; Hexemer, Alexander; Wang, Cheng; Russell, Thomas P
2017-01-29
Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.
NASA Astrophysics Data System (ADS)
Fou, A. C.; Onitsuka, O.; Ferreira, M.; Rubner, M. F.; Hsieh, B. R.
1996-05-01
Light-emitting diodes have been fabricated from self-assembled multilayers of poly(p-phenylene vinylene) (PPV) and two different polyanions; polystyrene sulfonic acid (SPS) and polymethacrylic acid (PMA). The type of polyanion used to assemble the multilayer thin films was found to dramatically influence the behavior and performance of devices fabricated with indium tin oxide and aluminum electrodes. Light-emitting devices fabricated from PMA/PPV multilayers were found to exhibit luminance levels in the range of 20-60 cd/m2, a thickness dependent turn-on voltage and classical rectifying behavior with rectification ratios greater than 105. In sharp contrast, the devices based on SPS/PPV exhibited near symmetric current-voltage curves, thickness independent turn-on voltages and much lower luminance levels. The significant difference in device behavior observed between these two systems is primarily due to a doping effect induced either chemically or electrochemically by the sulfonic acid groups of SPS. It was also found that the performance of these devices depends on the type of layer that is in contact with the Al top electrode thereby making it possible to manipulate device efficiency at the molecular level.
Configurable 3D-Printed millifluidic and microfluidic 'lab on a chip' reactionware devices.
Kitson, Philip J; Rosnes, Mali H; Sans, Victor; Dragone, Vincenza; Cronin, Leroy
2012-09-21
We utilise 3D design and 3D printing techniques to fabricate a number of miniaturised fluidic 'reactionware' devices for chemical syntheses in just a few hours, using inexpensive materials producing reliable and robust reactors. Both two and three inlet reactors could be assembled, as well as one-inlet devices with reactant 'silos' allowing the introduction of reactants during the fabrication process of the device. To demonstrate the utility and versatility of these devices organic (reductive amination and alkylation reactions), inorganic (large polyoxometalate synthesis) and materials (gold nanoparticle synthesis) processes were efficiently carried out in the printed devices.
Optical biosensors: a revolution towards quantum nanoscale electronics device fabrication.
Dey, D; Goswami, T
2011-01-01
The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.
Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland
2014-02-04
Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.
Tsuo, Y.S.; Deb, S.K.
1990-10-02
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. 6 figs.
Fabrication of flexible and vertical silicon nanowire electronics.
Weisse, Jeffrey M; Lee, Chi Hwan; Kim, Dong Rip; Zheng, Xiaolin
2012-06-13
Vertical silicon nanowire (SiNW) array devices directly connected on both sides to metallic contacts were fabricated on various non-Si-based substrates (e.g., glass, plastics, and metal foils) in order to fully exploit the nanomaterial properties for final applications. The devices were realized with uniform length Ag-assisted electroless etched SiNW arrays that were detached from their fabrication substrate, typically Si wafers, reattached to arbitrary substrates, and formed with metallic contacts on both sides of the NW array. Electrical characterization of the SiNW array devices exhibits good current-voltage characteristics consistent with the SiNW morphology.
Optical lithography of three-dimensional magnetophotonic microdevices
NASA Astrophysics Data System (ADS)
Nguyen, Dam Thuy Trang; Del Guercio, Olivia; Au, Thi Huong; Trinh, Duc Thien; Mai, Nguyen Phuong Thao; Lai, Ngoc Diep
2018-04-01
We have recently demonstrated a simple and low-cost fabrication technique, called low one-photon absorption direct laser writing, to realize desired polymeric microstructures. We present the use of this technique for fabrication of three-dimensional magnetophotonic devices on a photocurable homogeneous nanocomposite consisting of magnetite (Fe3O4) nanoparticles and a commercial SU8 photoresist. The fabricated magnetophotonic microstructures show strong response to an applied external magnetic field. Thus, various three-dimensional submicromechanical magnetophotonic devices, which can be mechanically driven by magnetic force, are designed and created. Potential applications of these devices are also discussed.
Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun
2016-01-01
Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. PMID:27811977
NASA Astrophysics Data System (ADS)
Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Kim, Sowon; Choi, Kyung Hyun
2017-08-01
Pursuit of the most appropriate materials and fabrication methods is essential for developing a reliable, rewritable and flexible memory device. In this study, we have proposed an advanced 2D nanocomposite of white graphene (hBN) flakes embedded with graphene quantum dots (GQDs) as the functional layer of a flexible memory device owing to their unique electrical, chemical and mechanical properties. Unlike the typical sandwich type structure of a memory device, we developed a cost effective planar structure, to simplify device fabrication and prevent sneak current. The entire device fabrication was carried out using printing technology followed by encapsulation in an atomically thin layer of aluminum oxide (Al2O3) for protection against environmental humidity. The proposed memory device exhibited attractive bipolar switching characteristics of high switching ratio, large electrical endurance and enhanced lifetime, without any crosstalk between adjacent memory cells. The as-fabricated device showed excellent durability for several bending cycles at various bending diameters without any degradation in bistable resistive states. The memory mechanism was deduced to be conductive filamentary; this was validated by illustrating the temperature dependence of bistable resistive states. Our obtained results pave the way for the execution of promising 2D material based next generation flexible and non-volatile memory (NVM) applications.
Masuo, Sadahiro; Sato, Wataru; Yamaguchi, Yuji; Suzuki, Mitsuharu; Nakayama, Ken-ichi; Yamada, Hiroko
2015-05-01
Recently, a unique 'photoprecursor approach' was reported as a new option to fabricate a p-i-n triple-layer organic photovoltaic device (OPV) through solution processes. By fabricating the p-i-n architecture using two kinds of photoprecursors and a [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) as the donor and the acceptor, the p-i-n OPVs afforded a higher photovoltaic efficiency than the corresponding p-n devices and i-devices, while the photovoltaic efficiency of p-i-n OPVs depended on the photoprecursors. In this work, the charge transfer efficiency of the i-devices composed of the photoprecursors and PC71BM was investigated using high-sensitivity fluorescence microspectroscopy combined with a time-correlated single photon counting technique to elucidate the photovoltaic efficiency depending on the photoprecursors and the effects of the p-i-n architecture. The spatially resolved fluorescence images and fluorescence lifetime measurements clearly indicated that the compatibility of the photoprecursors with PC71BM influences the charge transfer and the photovoltaic efficiencies. Although the charge transfer efficiency of the i-device was quite high, the photovoltaic efficiency of the i-device was much lower than that of the p-i-n device. These results imply that the carrier generation and carrier transportation efficiencies can be increased by fabricating the p-i-n architecture.
Kasama, Toshihiro; Kaji, Noritada; Tokeshi, Manabu; Baba, Yoshinobu
2017-01-01
Due to the inherent characteristics including confinement of molecular diffusion and high surface-to-volume ratio, microfluidic device-based immunoassay has great advantages in cost, speed, sensitivity, and so on, compared with conventional techniques such as microtiter plate-based ELISA, latex agglutination method, and lateral flow immunochromatography. In this paper, we explain the detection of C-reactive protein as a model antigen by using our microfluidic immunoassay device, so-called immuno-pillar device. We describe in detail how we fabricated and used the immuno-pillar devices.
Micro-supercapacitors from carbide derived carbon (CDC) films on silicon chips
NASA Astrophysics Data System (ADS)
Huang, Peihua; Heon, Min; Pech, David; Brunet, Magali; Taberna, Pierre-Louis; Gogotsi, Yury; Lofland, Samuel; Hettinger, Jeffrey D.; Simon, Patrice
2013-03-01
Interdigitated on-chip micro-supercapacitors based on Carbide Derived Carbon (CDC) films were fabricated and tested. A titanium carbide (TiC) film was patterned and treated with chlorine to obtain a TiC derived carbon (TiC-CDC) film, followed by the deposition of two types of current collectors (Ti/Au and Al) using standard micro-fabrication processes. CDC based micro-supercapacitors were electrochemically characterized by cyclic voltammetry and impedance spectroscopy using a 1 M tetraethylammonium tetrafluoroborate, NEt4BF4, in propylene carbonate (PC) electrolyte. A capacitance of 0.78 mF for the device and 1.5 mF cm-2 as the specific capacitance for the footprint of the device was measured for a 2 V potential range at 100 mV s-1. A specific energy of 3.0 mJ cm-2 and a specific power of 84 mW cm-2 were calculated for the devices. These devices provide a pathway for fabricating pure carbon-based micro-supercapacitors by micro-fabrication, and can be used for powering micro-electromechanical systems (MEMS) and electronic devices.
Improved Method of Manufacturing SiC Devices
NASA Technical Reports Server (NTRS)
Okojie, Robert S.
2005-01-01
The phrase, "common-layered architecture for semiconductor silicon carbide" ("CLASSiC") denotes a method of batch fabrication of microelectromechanical and semiconductor devices from bulk silicon carbide. CLASSiC is the latest in a series of related methods developed in recent years in continuing efforts to standardize SiC-fabrication processes. CLASSiC encompasses both institutional and technological innovations that can be exploited separately or in combination to make the manufacture of SiC devices more economical. Examples of such devices are piezoresistive pressure sensors, strain gauges, vibration sensors, and turbulence-intensity sensors for use in harsh environments (e.g., high-temperature, high-pressure, corrosive atmospheres). The institutional innovation is to manufacture devices for different customers (individuals, companies, and/or other entities) simultaneously in the same batch. This innovation is based on utilization of the capability for fabrication, on the same substrate, of multiple SiC devices having different functionalities (see figure). Multiple customers can purchase shares of the area on the same substrate, each customer s share being apportioned according to the customer s production-volume requirement. This makes it possible for multiple customers to share costs in a common foundry, so that the capital equipment cost per customer in the inherently low-volume SiC-product market can be reduced significantly. One of the technological innovations is a five-mask process that is based on an established set of process design rules. The rules provide for standardization of the fabrication process, yet are flexible enough to enable multiple customers to lay out masks for their portions of the SiC substrate to provide for simultaneous batch fabrication of their various devices. In a related prior method, denoted multi-user fabrication in silicon carbide (MUSiC), the fabrication process is based largely on surface micromachining of poly SiC. However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.
Laboratory experiments in integrated circuit fabrication
NASA Technical Reports Server (NTRS)
Jenkins, Thomas J.; Kolesar, Edward S.
1993-01-01
The objectives of the experiment are fourfold: to provide practical experience implementing the fundamental processes and technology associated with the science and art of integrated circuit (IC) fabrication; to afford the opportunity for the student to apply the theory associated with IC fabrication and semiconductor device operation; to motivate the student to exercise engineering decisions associated with fabricating integrated circuits; and to complement the theory of n-channel MOS and diffused devices that are presented in the classroom by actually fabricating and testing them. Therefore, a balance between theory and practice can be realized in the education of young engineers, whose education is often criticized as lacking sufficient design and practical content.
NASA Astrophysics Data System (ADS)
Muthukumaran, Packirisamy; Stiharu, Ion G.; Bhat, Rama B.
2003-10-01
This paper presents and applies the concept of micro-boundary conditioning to the design synthesis of microsystems in order to quantify the influence of inherent limitations of the fabrication process and the operating conditions on both static and dynamic behavior of microsystems. The predicted results on the static and dynamic behavior of a capacitive MEMS device, fabricated through MUMPs process, under the influence of the fabrication limitation and operating environment are presented along with the test results. The comparison between the predicted and experimental results shows a good agreement.
Kao, Peng-Kai; Hsu, Cheng-Che
2014-09-02
A portable microplasma generation device (MGD) operated in ambient air is introduced for making a microfluidic paper-based analytical device (μPAD) that serves as a primary healthcare platform. By utilizing a printed circuit board fabrication process, a flexible and lightweight MGD can be fabricated within 30 min with ultra low-cost. This MGD can be driven by a portable power supply (less than two pounds), which can be powered using 12 V-batteries or ac-dc converters. This MGD is used to perform maskless patterning of hydrophilic patterns with sub-millimeter spatial resolution on hydrophobic paper substrates with good pattern transfer fidelity. Using this MGD to fabricate μPADs is demonstrated. With a proper design of the MGD electrode geometry, μPADs with 500-μm-wide flow channels can be fabricated within 1 min and with a cost of less than $USD 0.05/device. We then test the μPADs by performing quantitative colorimetric assay tests and establish a calibration curve for detection of glucose and nitrite. The results show a linear response to a glucose assay for 1-50 mM and a nitrite assay for 0.1-5 mM. The low cost, miniaturized, and portable MGD can be used to fabricate μPADs on demand, which is suitable for in-field diagnostic tests. We believe this concept brings impact to the field of biomedical analysis, environmental monitoring, and food safety survey.
The effect of reactive ion etch (RIE) process conditions on ReRAM device performance
NASA Astrophysics Data System (ADS)
Beckmann, K.; Holt, J.; Olin-Ammentorp, W.; Alamgir, Z.; Van Nostrand, J.; Cady, N. C.
2017-09-01
The recent surge of research on resistive random access memory (ReRAM) devices has resulted in a wealth of different materials and fabrication approaches. In this work, we describe the performance implications of utilizing a reactive ion etch (RIE) based process to fabricate HfO2 based ReRAM devices, versus a more unconventional shadow mask fabrication approach. The work is the result of an effort to increase device yield and reduce individual device size. Our results show that choice of RIE etch gas (SF6 versus CF4) is critical for defining the post-etch device profile (cross-section), and for tuning the removal of metal layers used as bottom electrodes in the ReRAM device stack. We have shown that etch conditions leading to a tapered profile for the device stack cause poor electrical performance, likely due to metal re-deposition during etching, and damage to the switching layer. These devices exhibit nonlinear I-V during the low resistive state, but this could be improved to linear behavior once a near-vertical etch profile was achieved. Device stacks with vertical etch profiles also showed an increase in forming voltage, reduced switching variability and increased endurance.
Leung, Siu-Fung; Gu, Leilei; Zhang, Qianpeng; Tsui, Kwong-Hoi; Shieh, Jia-Min; Shen, Chang-Hong; Hsiao, Tzu-Hsuan; Hsu, Chin-Hung; Lu, Linfeng; Li, Dongdong; Lin, Qingfeng; Fan, Zhiyong
2014-01-01
Three-dimensional (3-D) nanostructures have demonstrated enticing potency to boost performance of photovoltaic devices primarily owning to the improved photon capturing capability. Nevertheless, cost-effective and scalable fabrication of regular 3-D nanostructures with decent robustness and flexibility still remains as a challenging task. Meanwhile, establishing rational design guidelines for 3-D nanostructured solar cells with the balanced electrical and optical performance are of paramount importance and in urgent need. Herein, regular arrays of 3-D nanospikes (NSPs) were fabricated on flexible aluminum foil with a roll-to-roll compatible process. The NSPs have precisely controlled geometry and periodicity which allow systematic investigation on geometry dependent optical and electrical performance of the devices with experiments and modeling. Intriguingly, it has been discovered that the efficiency of an amorphous-Si (a-Si) photovoltaic device fabricated on NSPs can be improved by 43%, as compared to its planar counterpart, in an optimal case. Furthermore, large scale flexible NSP solar cell devices have been fabricated and demonstrated. These results not only have shed light on the design rules of high performance nanostructured solar cells, but also demonstrated a highly practical process to fabricate efficient solar panels with 3-D nanostructures, thus may have immediate impact on thin film photovoltaic industry. PMID:24603964
Leung, Siu-Fung; Gu, Leilei; Zhang, Qianpeng; Tsui, Kwong-Hoi; Shieh, Jia-Min; Shen, Chang-Hong; Hsiao, Tzu-Hsuan; Hsu, Chin-Hung; Lu, Linfeng; Li, Dongdong; Lin, Qingfeng; Fan, Zhiyong
2014-03-07
Three-dimensional (3-D) nanostructures have demonstrated enticing potency to boost performance of photovoltaic devices primarily owning to the improved photon capturing capability. Nevertheless, cost-effective and scalable fabrication of regular 3-D nanostructures with decent robustness and flexibility still remains as a challenging task. Meanwhile, establishing rational design guidelines for 3-D nanostructured solar cells with the balanced electrical and optical performance are of paramount importance and in urgent need. Herein, regular arrays of 3-D nanospikes (NSPs) were fabricated on flexible aluminum foil with a roll-to-roll compatible process. The NSPs have precisely controlled geometry and periodicity which allow systematic investigation on geometry dependent optical and electrical performance of the devices with experiments and modeling. Intriguingly, it has been discovered that the efficiency of an amorphous-Si (a-Si) photovoltaic device fabricated on NSPs can be improved by 43%, as compared to its planar counterpart, in an optimal case. Furthermore, large scale flexible NSP solar cell devices have been fabricated and demonstrated. These results not only have shed light on the design rules of high performance nanostructured solar cells, but also demonstrated a highly practical process to fabricate efficient solar panels with 3-D nanostructures, thus may have immediate impact on thin film photovoltaic industry.
Collaborative designing and job satisfaction of airplane manufacturing engineers: A case study
NASA Astrophysics Data System (ADS)
Johnson, Michael David, Sr.
The group III-nitride system of materials has had considerable commercial success in recent years in the solid state lighting (SSL) and power electronics markets. The need for high efficient general lighting applications has driven research into InGaN based blue light emitting diodes (LEDs), and demand for more efficient power electronics for telecommunications has driven research into AlGaN based high electron mobility transistors (HEMTs). However, the group III-nitrides material properties make them attractive for several other applications that have not received as much attention. This work focuses on developing group III-nitride based devices for novel applications. GaN is a robust, chemically inert, piezoelectric material, making it an ideal candidate for surface acoustic wave (SAW) devices designed for high temperature and/or harsh environment sensors. In this work, SAW devices based on GaN are developed for use in high temperature gas or chemical sensor applications. To increase device sensitivity, while maintaining a simple one-step photolithography fabrication process, devices were designed to operate at high harmonic frequencies. This allows for GHz regime operation without sub-micron fabrication. One potential market for this technology is continuous emissions monitoring of combustion gas vehicles. In addition to SAW devices, high electron mobility transistors (HEMTs) were developed. The epitaxial structure was characterized and the 2-D electron gas concentrations were simulated and compared to experimental results. Device fabrication processes were developed and are outlined. Fabricated devices were electrically measured and device performance is discussed.
NASA Astrophysics Data System (ADS)
Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Christopher J.; Mocuta, Dan; Radu, Iuliana P.
2018-04-01
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for spin torque majority gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step towards the realization of a majority gate. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicular MTJs. The fabrication process can be generalized to any geometry and any number of MTJs. Thus, this framework can be applied to other spin logic concepts based on magnetic interconnect. Moreover, it allows exploration of spin dynamics for logic applications.
Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.
Morales-Masis, M; van der Molen, S J; Fu, W T; Hesselberth, M B; van Ruitenbeek, J M
2009-03-04
We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.
Whatever happened to silicon carbide. [semiconductor devices
NASA Technical Reports Server (NTRS)
Campbell, R. B.
1981-01-01
The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.
Gate tunable parallel double quantum dots in InAs double-nanowire devices
NASA Astrophysics Data System (ADS)
Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K.; Jeppesen, S.; Samuelson, L.; Xu, H. Q.; Tarucha, S.
2017-12-01
We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.
DNA Assembly in 3D Printed Fluidics
Patrick, William G.; Nielsen, Alec A. K.; Keating, Steven J.; Levy, Taylor J.; Wang, Che-Wei; Rivera, Jaime J.; Mondragón-Palomino, Octavio; Carr, Peter A.; Voigt, Christopher A.; Oxman, Neri; Kong, David S.
2015-01-01
The process of connecting genetic parts—DNA assembly—is a foundational technology for synthetic biology. Microfluidics present an attractive solution for minimizing use of costly reagents, enabling multiplexed reactions, and automating protocols by integrating multiple protocol steps. However, microfluidics fabrication and operation can be expensive and requires expertise, limiting access to the technology. With advances in commodity digital fabrication tools, it is now possible to directly print fluidic devices and supporting hardware. 3D printed micro- and millifluidic devices are inexpensive, easy to make and quick to produce. We demonstrate Golden Gate DNA assembly in 3D-printed fluidics with reaction volumes as small as 490 nL, channel widths as fine as 220 microns, and per unit part costs ranging from $0.61 to $5.71. A 3D-printed syringe pump with an accompanying programmable software interface was designed and fabricated to operate the devices. Quick turnaround and inexpensive materials allowed for rapid exploration of device parameters, demonstrating a manufacturing paradigm for designing and fabricating hardware for synthetic biology. PMID:26716448
Liu, Fangyang; Zeng, Fangqin; Song, Ning; Jiang, Liangxing; Han, Zili; Su, Zhenghua; Yan, Chang; Wen, Xiaoming; Hao, Xiaojing; Liu, Yexiang
2015-07-08
A facile sol-gel and selenization process has been demonstrated to fabricate high-quality single-phase earth abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic absorbers. The structure and band gap of the fabricated CZTSSe can be readily tuned by varying the [S]/([S] + [Se]) ratios via selenization condition control. The effects of [S]/([S] + [Se]) ratio on device performance have been presented. The best device shows 8.25% total area efficiency without antireflection coating. Low fill factor is the main limitation for the current device efficiency compared to record efficiency device due to high series resistance and interface recombination. By improving film uniformity, eliminating voids, and reducing the Mo(S,Se)2 interfacial layer, a further boost of the device efficiency is expected, enabling the proposed process for fabricating one of the most promising candidates for kesterite solar cells.
Non-equilibrium tunneling in zigzag graphene nanoribbon break-junction results in spin filtering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jiang, Liming; Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010; National ICT Australia, The University of Melbourne, Parkville 3010
Spintronic devices promise new faster and lower energy-consumption electronic systems. Graphene, a versatile material and candidate for next generation electronics, is known to possess interesting spintronic properties. In this paper, by utilizing density functional theory and non-equilibrium green function formalism, we show that Fano resonance can be generated by introducing a break junction in a zigzag graphene nanoribbon (ZGNR). Using this effect, we propose a new spin filtering device that can be used for spin injection. Our theoretical results indicate that the proposed device could achieve high spin filtering efficiency (over 90%) at practical fabrication geometries. Furthermore, our results indicatemore » that the ZGNR break junction lattice configuration can dramatically affect spin filtering efficiency and thus needs to be considered when fabricating real devices. Our device can be fabricated on top of spin transport channel and provides good integration between spin injection and spin transport.« less
NASA Technical Reports Server (NTRS)
Pinto, N. J.; Perez, R.; Mueller, C. H.; Theofylaktos, N.; Miranda, F. A.
2006-01-01
A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.
Simple and Versatile 3D Printed Microfluidics Using Fused Filament Fabrication.
Morgan, Alex J L; Hidalgo San Jose, Lorena; Jamieson, William D; Wymant, Jennifer M; Song, Bing; Stephens, Phil; Barrow, David A; Castell, Oliver K
2016-01-01
The uptake of microfluidics by the wider scientific community has been limited by the fabrication barrier created by the skills and equipment required for the production of traditional microfluidic devices. Here we present simple 3D printed microfluidic devices using an inexpensive and readily accessible printer with commercially available printer materials. We demonstrate that previously reported limitations of transparency and fidelity have been overcome, whilst devices capable of operating at pressures in excess of 2000 kPa illustrate that leakage issues have also been resolved. The utility of the 3D printed microfluidic devices is illustrated by encapsulating dental pulp stem cells within alginate droplets; cell viability assays show the vast majority of cells remain live, and device transparency is sufficient for single cell imaging. The accessibility of these devices is further enhanced through fabrication of integrated ports and by the introduction of a Lego®-like modular system facilitating rapid prototyping whilst offering the potential for novices to build microfluidic systems from a database of microfluidic components.
NASA Astrophysics Data System (ADS)
Smith, A. D.; Vaziri, S.; Rodriguez, S.; Östling, M.; Lemme, M. C.
2015-06-01
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental results of graphene field effect transistors (GFETs) which were fabricated using this wafer scalable method. The carrier mobilities in these transistors reach up to several hundred cm2 V-1 s-1. Further, these devices exhibit current saturation regions similar to graphene devices fabricated using mechanical exfoliation. The overall performance of the GFETs can not yet compete with record values reported for devices based on mechanically exfoliated material. Nevertheless, this large scale approach is an important step towards reliability and variability studies as well as optimization of device aspects such as electrical contacts and dielectric interfaces with statistically relevant numbers of devices. It is also an important milestone towards introducing graphene into wafer scale process lines.
Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses
Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo
2016-01-01
The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828
NASA Astrophysics Data System (ADS)
Adam, Tijjani; Hashim, U.
2017-03-01
Optimum flow in micro channel for sensing purpose is challenging. In this study, The optimizations of the fluid sample flows are made through the design and characterization of the novel microfluidics' architectures to achieve the optimal flow rate in the micro channels. The biocompatibility of the Polydimetylsiloxane (Sylgard 184 silicon elastomer) polymer used to fabricate the device offers avenue for the device to be implemented as the universal fluidic delivery system for bio-molecules sensing in various bio-medical applications. The study uses the following methodological approaches, designing a novel microfluidics' architectures by integrating the devices on a single 4 inches silicon substrate, fabricating the designed microfluidic devices using low-cost solution soft lithography technique, characterizing and validating the flow throughput of urine samples in the micro channels by generating pressure gradients through the devices' inlets. The characterization on the urine samples flow in the micro channels have witnessed the constant flow throughout the devices.
Simple and Versatile 3D Printed Microfluidics Using Fused Filament Fabrication
Morgan, Alex J. L.; Hidalgo San Jose, Lorena; Jamieson, William D.; Wymant, Jennifer M.; Song, Bing; Stephens, Phil
2016-01-01
The uptake of microfluidics by the wider scientific community has been limited by the fabrication barrier created by the skills and equipment required for the production of traditional microfluidic devices. Here we present simple 3D printed microfluidic devices using an inexpensive and readily accessible printer with commercially available printer materials. We demonstrate that previously reported limitations of transparency and fidelity have been overcome, whilst devices capable of operating at pressures in excess of 2000 kPa illustrate that leakage issues have also been resolved. The utility of the 3D printed microfluidic devices is illustrated by encapsulating dental pulp stem cells within alginate droplets; cell viability assays show the vast majority of cells remain live, and device transparency is sufficient for single cell imaging. The accessibility of these devices is further enhanced through fabrication of integrated ports and by the introduction of a Lego®-like modular system facilitating rapid prototyping whilst offering the potential for novices to build microfluidic systems from a database of microfluidic components. PMID:27050661
Electrospinning for nano- to mesoscale photonic structures
NASA Astrophysics Data System (ADS)
Skinner, Jack L.; Andriolo, Jessica M.; Murphy, John P.; Ross, Brandon M.
2017-08-01
The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of micro- and nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and post-processing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.
BCB Bonding Technology of Back-Side Illuminated COMS Device
NASA Astrophysics Data System (ADS)
Wu, Y.; Jiang, G. Q.; Jia, S. X.; Shi, Y. M.
2018-03-01
Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imaging applications. Wafer bonding is the basic technology and key process of the fabrication of BSI sensors. 6 inch bonding of CMOS wafer and glass wafer was fabricated based on the low bonding temperature and high stability of BCB. The influence of different thickness of BCB on bonding strength was studied. Wafer bonding with high strength, high stability and no bubbles was fabricated by changing bonding conditions.
Khalid, Syed; Cao, Chuanbao; Wang, Lin; Zhu, Youqi
2016-01-01
Large areal capacitance is essentially required to integrate the energy storage devices at the microscale electronic appliances. Energy storage devices based on metal oxides are mostly fabricated with low mass loading per unit area which demonstrated low areal capacitance. It is still a challenge to fabricate supercapacitor devices of porous metal oxides with large areal capacitance. Herein we report microwave method followed by a pyrolysis of the as-prepared precursor is used to synthesize porous nickel cobaltite microspheres. Porous NiCo2O4 microspheres are capable to deliver large areal capacitance due to their high specific surface area and small crystallite size. The facile strategy is successfully demonstrated to fabricate aqueous-based asymmetric & symmetric supercapacitor devices of porous NiCo2O4 microspheres with high mass loading of electroactive materials. The asymmetric & symmetric devices exhibit maximum areal capacitance and energy density of 380 mF cm−2 & 19.1 Wh Kg−1 and 194 mF cm−2 & 4.5 Wh Kg−1 (based on total mass loading of 6.25 & 6.0 mg) respectively at current density of 1 mA cm−2. The successful fabrication of symmetric device also indicates that NiCo2O4 can also be used as the negative electrode material for futuristic asymmetric devices. PMID:26936283
Hard and flexible optical printed circuit board
NASA Astrophysics Data System (ADS)
Lee, El-Hang; Lee, Hyun Sik; Lee, S. G.; O, B. H.; Park, S. G.; Kim, K. H.
2007-02-01
We report on the design and fabrication of hard and flexible optical printed circuit boards (O-PCBs). The objective is to realize generic and application-specific O-PCBs, either in hard form or flexible form, that are compact, light-weight, low-energy, high-speed, intelligent, and environmentally friendly, for low-cost and high-volume universal applications. The O-PCBs consist of 2-dimensional planar arrays of micro/nano-scale optical wires, circuits and devices that are interconnected and integrated to perform the functions of sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards. For fabrication, the polymer and organic optical wires and waveguides are first fabricated on a board and are used to interconnect and integrate micro/nano-scale photonic devices. The micro/nano-optical functional devices include lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices. For flexible boards, the optical waveguide arrays are fabricated on flexible poly-ethylen terephthalate (PET) substrates by UV embossing. Electrical layer carrying VCSEL and PD array is laminated with the optical layer carrying waveguide arrays. Both hard and flexible electrical lines are replaced with high speed optical interconnection between chips over four waveguide channels up to 10Gbps on each. We discuss uses of hard or flexible O-PCBs for telecommunication systems, computer systems, transportation systems, space/avionic systems, and bio-sensor systems.
NASA Astrophysics Data System (ADS)
Khalid, Syed; Cao, Chuanbao; Wang, Lin; Zhu, Youqi
2016-03-01
Large areal capacitance is essentially required to integrate the energy storage devices at the microscale electronic appliances. Energy storage devices based on metal oxides are mostly fabricated with low mass loading per unit area which demonstrated low areal capacitance. It is still a challenge to fabricate supercapacitor devices of porous metal oxides with large areal capacitance. Herein we report microwave method followed by a pyrolysis of the as-prepared precursor is used to synthesize porous nickel cobaltite microspheres. Porous NiCo2O4 microspheres are capable to deliver large areal capacitance due to their high specific surface area and small crystallite size. The facile strategy is successfully demonstrated to fabricate aqueous-based asymmetric & symmetric supercapacitor devices of porous NiCo2O4 microspheres with high mass loading of electroactive materials. The asymmetric & symmetric devices exhibit maximum areal capacitance and energy density of 380 mF cm-2 & 19.1 Wh Kg-1 and 194 mF cm-2 & 4.5 Wh Kg-1 (based on total mass loading of 6.25 & 6.0 mg) respectively at current density of 1 mA cm-2. The successful fabrication of symmetric device also indicates that NiCo2O4 can also be used as the negative electrode material for futuristic asymmetric devices.
Metal-polymer nanocomposites for stretchable optics and plasmonics
NASA Astrophysics Data System (ADS)
Potenza, Marco A. C.; Minnai, Chloé; Milani, Paolo
2016-12-01
Stretchable and conformable optical devices open very exciting perspectives for the fabrication of systems incorporating diffracting and optical power in a single element and of tunable plasmonic filters and absorbers. The use of nanocomposites obtained by inserting metallic nanoparticles produced in the gas phase into polymeric matrices allows to effectively fabricate cheap and simple stretchable optical elements able to withstand thousands of deformations and stretching cycles without any degradation of their optical properties. The nanocomposite-based reflective optical devices show excellent performances and stability compared to similar devices fabricated with standard techniques. The nanocomposite-based devices can be therefore applied to arbitrary curved non-optical grade surfaces in order to achieve optical power and to minimize aberrations like astigmatism. Examples discussed here include stretchable reflecting gratings, plasmonic filters tunable by mechanical stretching and light absorbers.
Fabrication of Microhotplates Based on Laser Micromachining of Zirconium Oxide
NASA Astrophysics Data System (ADS)
Oblov, Konstantin; Ivanova, Anastasia; Soloviev, Sergey; Samotaev, Nikolay; Lipilin, Alexandr; Vasiliev, Alexey; Sokolov, Andrey
We present a novel approach to the fabrication of MEMS devices, which can be used for gas sensors operating in harsh environment in wireless and autonomous information systems. MEMS platforms based on ZrO2/Y2O3 (YSZ) are applied in these devices. The methods of ceramic MEMS devices fabrication with laser micromachining are considered. It is shown that the application of YSZ membranes permits a decrease in MEMS power consumption at 4500C down to ∼75 mW at continuous heating and down to ∼ 1 mW at pulse heating mode. The application of the platforms is not restricted by gas sensors: they can be used for fast thermometers, bolometric matrices, flowmeteres and other MEMS devices working under harsh environmental conditions.
Torres, Juan C; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán
2014-05-02
A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed.
Bechtold, Christoph; de Miranda, Rodrigo Lima; Chluba, Christoph; Quandt, Eckhard
2016-12-01
Self-expandable medical devices provide mechanical functionality at a specific location of the human body and are viable for minimal invasive procedures. Besides radiopaque markers and drug-eluting coatings, next generation self-expandable devices can be equipped with additional functionality, such as conductive and flexible electrodes, which enables chronic recording of bioelectrical signals, stimulating or ablating tissue. This promises new therapeutic options in various medical fields, among them in particular neuromodulation (e.g. deep brain stimulation), BioMEMS, radio frequency ablation, mapping or denervation. However, the fabrication of such multi-functional devices is challenging. For this study we have realized a 35 μm thick, superelastic NiTi thin film stent structure with six isolated electrodes on the outer circumference, each electrode connected to a contact pad at the end of the stent structure, using magnetron sputtering, UV lithography and wet chemical etching. Mechanical and electrical properties of the device during typical loading conditions, i.e. crimping, simulated pulsatile and electrochemical testing, were characterized and reveal promising results. For the fabrication of future multifunctional, minimal invasive medical devices, such as electroceuticals or other intelligent implants, NiTi thin film technology is therefore a versatile alternative to conventional fabrication routes.
Li, Zhi; Tevis, Ian D; Oyola-Reynoso, Stephanie; Newcomb, Lucas B; Halbertsma-Black, Julian; Bloch, Jean-Francis; Thuo, Martin
2015-12-01
Interest in low-cost analytical devices (especially for diagnostics) has recently increased; however, concomitant translation to the field has been slow, in part due to personnel and supply-chain challenges in resource-limited settings. Overcoming some of these challenges require the development of a method that takes advantage of locally available resources and/or skills. We report a Melt-and-mold fabrication (MnM Fab) approach to low-cost and simple devices that has the potential to be adapted locally since it requires a single material that is recyclable and simple skills to access multiple devices. We demonstrated this potential by fabricating entry level bio-analytical devices using an affordable low-melting metal alloy, Field's metal, with molds produced from known materials such as plastic (acrylonitrile-butadiene-styrene (ABS)), glass, and paper. We fabricated optical gratings then 4×4 well plates using the same recycled piece of metal. We then reconfigured the well plates into rapid prototype microfluidic devices with which we demonstrated laminar flow, droplet generation, and bubble formation from T-shaped channels. We conclude that this MnM-Fab method is capable of addressing some challenges typically encountered with device translation, such as technical know-how or material supply, and that it can be applied to other devices, as needed in the field, using a single moldable material. Copyright © 2015 Elsevier B.V. All rights reserved.
Flexible MEMS: A novel technology to fabricate flexible sensors and electronics
NASA Astrophysics Data System (ADS)
Tu, Hongen
This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high-performance MEMS devices and electronics can be integrated into flexible substrates. The potential of our technology is enormous. Many wearable and implantable devices can be developed based on this technology.
NASA Astrophysics Data System (ADS)
Colpani, Alessandro; Fiorentino, Antonio; Ceretti, Elisabetta
2018-05-01
Additive Manufacturing (AM) differs from traditional manufacturing technologies by its ability to handle complex shapes with great design flexibility. These features make the technique suitable to fabricate customized components, particularly answering specific custom needs. Although AM mainly referred to prototyping, nowadays the interest in direct manufacturing of actual parts is growing. This article shows the application of AM within the project 3DP-4H&W (3D Printing for Health & Wealth) which involves engineers and physicians for developing pediatric custom-made medical devices to enhance the fulfilling of the patients specific needs. In the project, two types of devices made of a two-component biocompatible silicone are considered. The first application (dental field) consists in a device for cleft lip and palate. The second one (audiological field) consists in an acoustic prosthesis. The geometries of the devices are based on the anatomy of the patient that is obtained through a 3D body scan process. For both devices, two different approaches were planned, namely direct AM and indirect Rapid Tooling (RT). In particular, direct AM consists in the FDM processing of silicone, while RT consists in molds FDM fabrication followed by silicone casting. This paper presents the results of the RT method that is articulated in different phases: the acquisition of the geometry to be realized, the design of the molds taking into account the casting feasibility (as casting channel, vents, part extraction), the realization of molds produced through AM, molds surface chemical finishing, pouring and curing of the silicone. The fabricated devices were evaluated by the physicians team that confirmed the effectiveness of the proposed procedure in fabricating the desired devices. Moreover, the procedure can be used as a general method to extend the range of applications to any custom-made device for anatomic districts, especially where complex shapes are present (as tracheal or maxillary prostheses).
Cardoso, Thiago M G; de Souza, Fabrício R; Garcia, Paulo T; Rabelo, Denilson; Henry, Charles S; Coltro, Wendell K T
2017-06-29
Simple methods have been developed for fabricating microfluidic paper-based analytical devices (μPADs) but few of these devices can be used with organic solvents and/or aqueous solutions containing surfactants. This study describes a simple fabrication strategy for μPADs that uses readily available scholar glue to create the hydrophobic flow barriers that are resistant to surfactants and organic solvents. Microfluidic structures were defined by magnetic masks designed with either neodymium magnets or magnetic sheets to define the patter, and structures were created by spraying an aqueous solution of glue on the paper surface. The glue-coated paper was then exposed to UV/Vis light for cross-linking to maximize chemical resistance. Examples of microzone arrays and microfluidic devices are demonstrated. μPADs fabricated with scholar glue retained their barriers when used with surfactants, organic solvents, and strong/weak acids and bases unlike common wax-printed barriers. Paper microzones and microfluidic devices were successfully used for colorimetric assays of clinically relevant analytes commonly detected in urinalysis to demonstrate the low background of the barrier material and generally applicability to sensing. The proposed fabrication method is attractive for both its ability to be used with diverse chemistries and the low cost and simplicity of the materials and process. Copyright © 2017 Elsevier B.V. All rights reserved.
One-step sol-gel imprint lithography for guided-mode resonance structures.
Huang, Yin; Liu, Longju; Johnson, Michael; C Hillier, Andrew; Lu, Meng
2016-03-04
Guided-mode resonance (GMR) structures consisting of sub-wavelength periodic gratings are capable of producing narrow-linewidth optical resonances. This paper describes a sol-gel-based imprint lithography method for the fabrication of submicron 1D and 2D GMR structures. This method utilizes a patterned polydimethylsiloxane (PDMS) mold to fabricate the grating coupler and waveguide for a GMR device using a sol-gel thin film in a single step. An organic-inorganic hybrid sol-gel film was selected as the imprint material because of its relatively high refractive index. The optical responses of several sol-gel GMR devices were characterized, and the experimental results were in good agreement with the results of electromagnetic simulations. The influence of processing parameters was investigated in order to determine how finely the spectral response and resonant wavelength of the GMR devices could be tuned. As an example potential application, refractometric sensing experiments were performed using a 1D sol-gel device. The results demonstrated a refractive index sensitivity of 50 nm/refractive index unit. This one-step fabrication process offers a simple, rapid, and low-cost means of fabricating GMR structures. We anticipate that this method can be valuable in the development of various GMR-based devices as it can readily enable the fabrication of complex shapes and allow the doping of optically active materials into sol-gel thin film.
NASA Astrophysics Data System (ADS)
Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen
2018-01-01
In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.
NASA Astrophysics Data System (ADS)
Fukuda, Kenjiro; Takeda, Yasunori; Yoshimura, Yudai; Shiwaku, Rei; Tran, Lam Truc; Sekine, Tomohito; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo
2014-06-01
Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-μm-thick parylene-C films with high field-effect mobility (1.0 cm2 V-1 s-1) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m-2) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.
Fabrication of eco-friendly PNP transistor using RF magnetron sputtering
NASA Astrophysics Data System (ADS)
Kumar, B. Santhosh; Harinee, N.; Purvaja, K.; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Venkateswaran, C.
2018-05-01
An effort has been made to fabricate a thin film transistor using eco-friendly oxide semiconductor materials. Oxide semiconductor materials are cost - effective, thermally and chemically stable with high electron/hole mobility. Copper (II) oxide is a p-type semiconductor and zinc oxide is an n-type semiconductor. A pnp thin film transistor was fabricated using RF magnetron sputtering. The films deposited have been subjected to structural characterization using AFM. I-V characterization of the fabricated device, Ag/CuO/ZnO/CuO/Ag, confirms transistor behaviour. The mechanism of electron/hole transport of the device is discussed below.
Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices
Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong
2018-01-01
Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759
NASA Astrophysics Data System (ADS)
Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.
Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.
Dual-beam optical trapping of cells in an optofluidic device fabricated by femtosecond lasers
NASA Astrophysics Data System (ADS)
Bellini, N.; Bragheri, F.; Vishnubhatla, K. C.; Ferrara, L.; Minzioni, P.; Cerullo, G.; Ramponi, R.; Cristiani, I.; Osellame, R.
2010-02-01
We present design and optimization of an optofluidic monolithic chip, able to provide optical trapping and controlled stretching of single cells. The chip is fabricated in a fused silica glass substrate by femtosecond laser micromachining, which can produce both optical waveguides and microfluidic channels with great accuracy. Versatility and three-dimensional capabilities of this fabrication technology provide the possibility to fabricate circular cross-section channels with enlarged access holes for an easy connection with an external fluidic circuit. Moreover, a new fabrication procedure adopted allows the demonstration of microchannels with a square cross-section, thus guaranteeing an improved quality of the trapped cell images. Optical trapping and stretching of single red blood cells are demonstrated, thus proving the effectiveness of the proposed device as a monolithic optical stretcher. We believe that femtosecond laser micromachining represents a promising technique for the development of multifunctional integrated biophotonic devices that can be easily coupled to a microscope platform, thus enabling a complete characterization of the cells under test.
Wafer scale fabrication of carbon nanotube thin film transistors with high yield
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tian, Boyuan; Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn; Yan, Qiuping
Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratiomore » (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.« less
Design and fabrication of chemically robust three-dimensional microfluidic valves.
Maltezos, George; Garcia, Erika; Hanrahan, Grady; Gomez, Frank A; Vyawahare, Saurabh; Vyawhare, Saurabh; van Dam, R Michael; Chen, Yan; Scherer, Axel
2007-09-01
A current problem in microfluidics is that poly(dimethylsiloxane) (PDMS), used to fabricate many microfluidic devices, is not compatible with most organic solvents. Fluorinated compounds are more chemically robust than PDMS but, historically, it has been nearly impossible to construct valves out of them by multilayer soft lithography (MSL) due to the difficulty of bonding layers made of "non-stick" fluoropolymers necessary to create traditional microfluidic valves. With our new three-dimensional (3D) valve design we can fabricate microfluidic devices from fluorinated compounds in a single monolithic layer that is resistant to most organic solvents with minimal swelling. This paper describes the design and development of 3D microfluidic valves by molding of a perfluoropolyether, termed Sifel, onto printed wax molds. The fabrication of Sifel-based microfluidic devices using this technique has great potential in chemical synthesis and analysis.
NASA Astrophysics Data System (ADS)
Su, Yanfeng; Cai, Zhijian; Liu, Quan; Zou, Wenlong; Guo, Peiliang; Wu, Jianhong
2018-01-01
Multiview holographic 3D display based on the nano-grating patterned directional diffractive device can provide 3D images with high resolution and wide viewing angle, which has attracted considerable attention. However, the current directional diffractive device fabricated on the photoresist is vulnerable to damage, which will lead to the short service life of the device. In this paper, we propose a directional diffractive device on glass substrate to increase its service life. In the design process, the period and the orientation of the nano-grating at each pixel are carefully calculated accordingly by the predefined position of the viewing zone, and the groove parameters are designed by analyzing the diffraction efficiency of the nano-grating pixel on glass substrate. In the experiment, a 4-view photoresist directional diffractive device with a full coverage of pixelated nano-grating arrays is efficiently fabricated by using an ultraviolet continuously variable spatial frequency lithography system, and then the nano-grating patterns on the photoresist are transferred to the glass substrate by combining the ion beam etching and the reactive ion beam etching for controlling the groove parameters precisely. The properties of the etched glass device are measured under the illumination of a collimated laser beam with a wavelength of 532nm. The experimental results demonstrate that the light utilization efficiency is improved and optimized in comparison with the photoresist device. Furthermore, the fabricated device on glass substrate is easier to be replicated and of better durability and practicability, which shows great potential in the commercial applications of 3D display terminal.
Silicon insulator-based dielectrophoresis devices for minimized heating effects.
Zellner, Phillip; Agah, Masoud
2012-08-01
Concentration of biological specimens that are extremely dilute in a solution is of paramount importance for their detection. Microfluidic chips based on insulator-based DEP (iDEP) have been used to selectively concentrate bacteria and viruses. iDEP biochips are currently fabricated with glass or polymer substrates to allow for high electric fields within the channels. Joule heating is a well-known problem in these substrates and can lead to decreased throughput and even device failure. In this work, we present, for the first time, highly efficient trapping and separation of particles in DC iDEP devices that are fabricated on silicon using a single-etch-step three-dimensional microfabrication process with greatly improved heat dissipation properties. Fabrication in silicon allows for greater heat dissipation for identical geometries and operating conditions. The 3D fabrication allows for higher performance at lower applied potentials. Thermal measurements were performed on both the presented silicon chips and previously published PDMS devices comprised of microposts. Trapping and separation of 1 and 2 μm polystyrene particles was demonstrated. These results demonstrate the feasibility of high-performance silicon iDEP devices for the next generation of sorting and concentration microsystems. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Monitoring elbow isometric contraction by novel wearable fabric sensing device
NASA Astrophysics Data System (ADS)
Wang, Xi; Tao, Xiaoming; So, Raymond C. H.; Shu, Lin; Yang, Bao; Li, Ying
2016-12-01
Fabric-based wearable technology is highly desirable in sports, as it is light, flexible, soft, and comfortable with little interference to normal sport activities. It can provide accurate information on the in situ deformation of muscles in a continuous and wireless manner. During elbow flexion in isometric contraction, upper arm circumference increases with the contraction of elbow flexors, and it is possible to monitor the muscles’ contraction by limb circumferential strains. This paper presents a new wireless wearable anthropometric monitoring device made from fabric strain sensors for the human upper arm. The materials, structural design and calibration of the device are presented. Using an isokinetic testing system (Biodex3®) and the fabric monitoring device simultaneously, in situ measurements were carried out on elbow flexors in isometric contraction mode with ten subjects for a set of positions. Correlations between the measured values of limb circumferential strain and normalized torque were examined, and a linear relationship was found during isometric contraction. The average correlation coefficient between them is 0.938 ± 0.050. This wearable anthropometric device thus provides a useful index, the limb circumferential strain, for upper arm muscle contraction in isometric mode.
Progress in silicon carbide semiconductor technology
NASA Technical Reports Server (NTRS)
Powell, J. A.; Neudeck, P. G.; Matus, L. G.; Petit, J. B.
1992-01-01
Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication.
Wafer bonded epitaxial templates for silicon heterostructures
Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcubera I [Paris, FR
2008-03-11
A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
Wafer bonded epitaxial templates for silicon heterostructures
NASA Technical Reports Server (NTRS)
Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)
2008-01-01
A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
Monolayer Transition Metal Dichalcogenides as Light Sources.
Pu, Jiang; Takenobu, Taishi
2018-06-13
Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley-coupled systems. This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light-emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light-emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high-performance light-emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu
2017-12-13
We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.
CVD Polymers for Devices and Device Fabrication.
Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K
2017-03-01
Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Sherohman, John W [Livermore, CA; Coombs, III, Arthur W.; Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA
2007-05-29
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.
Magnetically Controlled Surface Acoustic Waves on Multiferroic BiFeO3
NASA Astrophysics Data System (ADS)
Ishii, Y.; Sasaki, R.; Nii, Y.; Ito, T.; Onose, Y.
2018-03-01
We fabricate a surface acoustic wave (SAW) device on a multiferroic BiFeO3 crystal while SAW devices are usually fabricated on nonmagnetic piezoelectrics and commercially available as bandpass filters. By using the time-domain technique, we demonstrate the SAW excitation on BiFeO3 . The amplitude and phase of the SAW signal are modulated by the external magnetic field reflecting the multiferroicity of BiFeO3 . The magnetic controllability of the multiferroic SAW device seems useful for the further functionalization of the SAW device.
Fabrication of solar beam steering electrowetting devices—present status and future prospects
NASA Astrophysics Data System (ADS)
Khan, I.; Castelletto, S.; Rosengarten, G.
2017-10-01
Many different technologies are used to track the movement of the sun to both enable concentration of its energy and maximize the yearly energy capture. Their present main limitations are the cost, size, visual impact and wind loading, particularly for applications involving mounting to a building. A parabolic concentrator, for example, along with its steering equipment is heavy and bulky, and is not suitable for rooftop applications. Instead, thin and flat solar concentration devices are required for hassle-free rooftop applications. The use of electrowetting-controlled liquid lenses has emerged as a novel approach for solar tracking and concentration. By steering sunlight using thin electrowetting cell arrays, bulky mechanical equipment is not required. The basic concept of this technology is to change the shape of a liquid interface that is formed by two immiscible fluids of different refractive indices, by simply applying an electric field. An important challenge in electrowetting beam steering devices is the optimization of the design and fabrication process for each of their main constituent components, to maximize optical efficiency. In this paper, we report on the state-of-the-art fabrication methods for electrowetting devices for solar beam steering. We have reviewed the present status of different components types and related fabrication methods, and how they affect the efficiency and performance of such devices. The work identifies future prospects in using electrowetting beam steering devices for solar energy applications. This paper will help researchers and developers in the field to determine the components and fabrication process that affect the development of efficient beam steering electrowetting devices.
Torres, Juan C.; Vergaz, Ricardo; Barrios, David; Sánchez-Pena, José Manuel; Viñuales, Ana; Grande, Hans Jürgen; Cabañero, Germán
2014-01-01
A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed. PMID:28788632
Fabrication of hybrid molecular devices using multi-layer graphene break junctions.
Island, J O; Holovchenko, A; Koole, M; Alkemade, P F A; Menelaou, M; Aliaga-Alcalde, N; Burzurí, E; van der Zant, H S J
2014-11-26
We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.
Fabrication of hybrid molecular devices using multi-layer graphene break junctions
NASA Astrophysics Data System (ADS)
Island, J. O.; Holovchenko, A.; Koole, M.; Alkemade, P. F. A.; Menelaou, M.; Aliaga-Alcalde, N.; Burzurí, E.; van der Zant, H. S. J.
2014-11-01
We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.
NASA Astrophysics Data System (ADS)
Nagai, Moeto; Oguri, Michihito; Shibata, Takayuki
2015-06-01
We report a model of a light-controlled microvalve driven by Volvox and characterization of Volvox as a movable microvalve element in a multilayer microfluidic device for development of the valve. First, a three-layer microfluidic device having a single through-hole was fabricated by a replica molding process. The fabricated devices met the requirements for experiments using Volvox. Second, we used the phototactic behavior of V. carteri and controlled its motions in a microchannel by illuminating light. V. carteri migrated to the light source in the channel. Third, a colony of V. carteri was placed on a microhole, and the colony was found to stop the flow compared to the flow without Volvox on the hole. The integration of all of the obtained findings is expected to lead to the fabrication of the proposed microvalve.
Rapid and low-cost hot-embossing of polycaprolactone microfluidic devices
NASA Astrophysics Data System (ADS)
Fan, Yiqiang; Liu, Shicheng; He, Jianyun; Gao, Kexin; Zhang, Yajun
2018-01-01
Polycaprolactone (PCL) is a low-cost biocompatible and biodegradable material which is highly suitable for the short-live applications like microfluidics in the biological and medical field. In this study, a rapid and low-cost microfabrication technique for PCL-based microfluidic devices is proposed, the SU-8 mold fabricated on the silicon substrate was used for the hot-embossing of microstructures on PCL. Since PCL after the molding process is optically non-transparent, to improve the visibility of the fluid in the microfluidic device and enclosing the microchannel, a transparency adhesive film which originally used for the sealing of PCR well-plate is used for the sealing of the microchannels embossed on PCL substrate. The profile of the fabricated microchannels was carefully characterized, the bonding strength is tested and several PCL-based microfluidic devices were also fabricated and tested for demonstration.
Micro-Scale Regenerative Heat Exchanger
NASA Technical Reports Server (NTRS)
Moran, Matthew E.; Stelter, Stephan; Stelter, Manfred
2004-01-01
A micro-scale regenerative heat exchanger has been designed, optimized and fabricated for use in a micro-Stirling device. Novel design and fabrication techniques enabled the minimization of axial heat conduction losses and pressure drop, while maximizing thermal regenerative performance. The fabricated prototype is comprised of ten separate assembled layers of alternating metal-dielectric composite. Each layer is offset to minimize conduction losses and maximize heat transfer by boundary layer disruption. A grating pattern of 100 micron square non-contiguous flow passages were formed with a nominal 20 micron wall thickness, and an overall assembled ten-layer thickness of 900 microns. Application of the micro heat exchanger is envisioned in the areas of micro-refrigerators/coolers, micropower devices, and micro-fluidic devices.
Development of silicon carbide semiconductor devices for high temperature applications
NASA Technical Reports Server (NTRS)
Matus, Lawrence G.; Powell, J. Anthony; Petit, Jeremy B.
1991-01-01
The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.
Monolithic microfabricated valves and pumps by multilayer soft lithography.
Unger, M A; Chou, H P; Thorsen, T; Scherer, A; Quake, S R
2000-04-07
Soft lithography is an alternative to silicon-based micromachining that uses replica molding of nontraditional elastomeric materials to fabricate stamps and microfluidic channels. We describe here an extension to the soft lithography paradigm, multilayer soft lithography, with which devices consisting of multiple layers may be fabricated from soft materials. We used this technique to build active microfluidic systems containing on-off valves, switching valves, and pumps entirely out of elastomer. The softness of these materials allows the device areas to be reduced by more than two orders of magnitude compared with silicon-based devices. The other advantages of soft lithography, such as rapid prototyping, ease of fabrication, and biocompatibility, are retained.
Four Terminal Gallium Nitride MOSFETs
NASA Astrophysics Data System (ADS)
Veety, Matthew Thomas
All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric and metal gate. Preliminary devices exhibited high GaN-oxide interface state density, Dit, on the order of 1013 cm-2· eV-1. Additional experiments and device fabrication was focused on improving device performance through optimization of the ion implantation activation anneal as well as incorporation of a bulk p-type ohmic contact and migration to a thicker, lower defect density, HVPE-grown template substrate. The first reported MOSFET on HVPE grown GaN substrates (templates) is reported with peak measured drain current of 1.05 mA/mm and a normalized transconductance of 57 muS/mm. Fabricated devices exhibited large (greater than 1 muA) source-to-drain junction leakage which is attributed to low activated doping density in the MOCVD-grown p-type bulk. MOSFETs fabricated on template substrates show more than twice the measured drain current as similar devices fabricated on traditional MOCVD GaN on sapphire substrates for the same bias conditions. Also, template MOSFETs have decreased gate leakage which allowed for a much greater range of operation. This performance increase is attributed to a more than doubled effective channel mobility on template GaN MOSFETs due to decreased crystal defect scattering when compared to a MOCVD-grown GaN-on-sapphire MOSFET. Fabricated MOSFETs also exhibit decreased interface state density with lower bound of 2.2x1011 cm-2·eV-1 when compared to prelimary MOSFETs. This decrease is associated with the use of a sacrificial oxide cap during source/drain activation. Suggested work for continued research is also presented which includes experiments to improve source/drain ion implantation profile, utilization of selective area growth for the active area, improved n- and p-type ohmic contact resistance and investigation of alternate oxides.
Panzer, Fabian; Hanft, Dominik; Gujar, Tanaji P; Kahle, Frank-Julian; Thelakkat, Mukundan; Köhler, Anna; Moos, Ralf
2016-04-08
We present the successful fabrication of CH₃NH₃PbI₃ perovskite layers by the aerosol deposition method (ADM). The layers show high structural purity and compactness, thus making them suitable for application in perovskite-based optoelectronic devices. By using the aerosol deposition method we are able to decouple material synthesis from layer processing. Our results therefore allow for enhanced and easy control over the fabrication of perovskite-based devices, further paving the way for their commercialization.
Direct laser writing for micro-optical devices using a negative photoresist.
Tsutsumi, Naoto; Hirota, Junichi; Kinashi, Kenji; Sakai, Wataru
2017-12-11
Direct laser writing (DLW) via two-photon absorption (TPA) has attracted much attention as a new microfabrication technique because it can be applied to fabricate complex, three-dimensional (3D) microstructures. In this study, 3D microstructures and micro-optical devices of micro-lens array on the micrometer scale are fabricated using the negative photoresist SU-8 through TPA with a femtosecond laser pulse under a microscope. The effects of the irradiation conditions on linewidths, such as laser power, writing speed, and writing cycles (a number of times a line is overwritten), are investigated before the fabrication of the 3D microstructures. Various microstructures such as woodpiles, hemisphere and microstructures, 3D micro-lens and micro-lens array for micro-optical devices are fabricated. The shape of the micro-lens is evaluated using the shape analysis mode of a laser microscope to calculate the working distance of the fabricated micro-lenses. The calculated working distance corresponds well to the experimentally measured value. The focusing performance of the fabricated micro-lens is confirmed by the TPA fluorescence of an isopropyl thioxanthone (ITX) ethanol solution excited by a Ti:sapphire femtosecond laser at 800 nm. Micro-lens array (assembled 9 micro-lenses) are fabricated. Nine independent woodpile structures are simultaneously manufactured by DLW via TPA to confirm the multi-focusing ability using the fabricated micro-lens array.
Fabrication and Characterization of Thermo-Optic Mach-Zehnder Silicon Modulator
NASA Astrophysics Data System (ADS)
Park, Yeongho
This thesis focuses on the modeling, design, and fabrication of the Thermo-Optic Mach-Zehnder Modulator, which is one of the simple active devices in silicon photonics. The Mach-Zehnder interferometer (MZI) was formed as an optical path on a silicon on insulator (SOI) wafer of 2040+/-80 nm thick, and the thermo-optic effect was used to modulate the infrared light of 1553 nm wavelength by controlling the temperature of the one arm of the MZI. To fabricate and understand the Si photonic device, the whole process from theory to the measurement setup is introduced. Additionally, all the fabrication details and some informative experiments which were performed during the fabrication are discussed for students who will study the more developed devices. The width of the designed waveguide is 4 mum, but the width of the fabricated waveguide is 3.0+/-0.2 mum due to the isotropic etching. For the lithography for both patterning waveguides and metal contacts, the AZ 5214 photoresist was used, and the details of the lithography was discussed. Furthermore, the lift-off method was performed and introduced to solve the over-etching problem. The fabricated metal contacts can withstand up to 1.6W, and the electric power 0.3W is required to make Pi phase difference according to the simulation result by the simulation software Lumerical. The optical output of the device was not detected due to the huge losses from the sidewall roughness and the insertion loss, so it is discussed in the experimental measurement chapter.
3D-printed Microfluidic Devices: Fabrication, Advantages and Limitations—a Mini Review
Chen, Chengpeng; Mehl, Benjamin T.; Munshi, Akash S.; Townsend, Alexandra D.; Spence, Dana M.; Martin, R. Scott
2016-01-01
A mini-review with 79 references. In this review, the most recent trends in 3D-printed microfluidic devices are discussed. In addition, a focus is given to the fabrication aspects of these devices, with the supplemental information containing detailed instructions for designing a variety of structures including: a microfluidic channel, threads to accommodate commercial fluidic fittings, a flow splitter; a well plate, a mold for PDMS channel casting; and how to combine multiple designs into a single device. The advantages and limitations of 3D-printed microfluidic devices are thoroughly discussed, as are some future directions for the field. PMID:27617038
Transistors using crystalline silicon devices on glass
McCarthy, Anthony M.
1995-01-01
A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.
3D-printed Microfluidic Devices: Fabrication, Advantages and Limitations-a Mini Review.
Chen, Chengpeng; Mehl, Benjamin T; Munshi, Akash S; Townsend, Alexandra D; Spence, Dana M; Martin, R Scott
2016-08-21
A mini-review with 79 references. In this review, the most recent trends in 3D-printed microfluidic devices are discussed. In addition, a focus is given to the fabrication aspects of these devices, with the supplemental information containing detailed instructions for designing a variety of structures including: a microfluidic channel, threads to accommodate commercial fluidic fittings, a flow splitter; a well plate, a mold for PDMS channel casting; and how to combine multiple designs into a single device. The advantages and limitations of 3D-printed microfluidic devices are thoroughly discussed, as are some future directions for the field.
Improved Fabrication of Lithium Films Having Micron Features
NASA Technical Reports Server (NTRS)
Whitacre, Jay
2006-01-01
An improved method has been devised for fabricating micron-dimension Li features. This approach is intended for application in the fabrication of lithium-based microelectrochemical devices -- particularly solid-state thin-film lithium microbatteries.
NASA Astrophysics Data System (ADS)
Wang, C.-K.; Liao, W.-H.; Wu, H.-M.; Lo, Y.-H.; Lin, T.-R.; Tung, Y.-C.
2017-11-01
Polydimethylsiloxane (PDMS) has become a widely used material to construct microfluidic devices for various biomedical and chemical applications due to its desirable material properties and manufacturability. PDMS microfluidic devices are usually fabricated using soft lithography replica molding methods with master molds made of photolithogrpahy patterned photoresist layers on silicon wafers. The fabricated microfluidic channels often have rectangular cross-sectional geometries with single or multiple heights. In this paper, we develop a single step sequential PDMS wet etching process that can be used to fabricate microfluidic channels with various cross-sectional geometries from single-layer PDMS microfluidic channels. The cross-sections of the fabricated channel can be non-rectangular, and varied along the flow direction. Furthermore, the fabricated cross-sectional geometries can be numerically simulated beforehand. In the experiments, we fabricate microfluidic channels with various cross-sectional geometries using the developed technique. In addition, we fabricate a microfluidic mixer with alternative mirrored cross-sectional geometries along the flow direction to demonstrate the practical usage of the developed technique.
Qi, Ruijie; Nie, Jinhui; Liu, Mingyang; Xia, Mengyang; Lu, Xianmao
2018-04-26
Stretchable energy storage devices are of great importance for the viable applications of wearable/stretchable electronics. Studies on stretchable energy storage devices, especially supercapacitors (SCs), have shown encouraging progress. However, challenges still remain in the pursuit of high specific capacitances and facile fabrication methods. Herein, we report a modular materials fabrication and assembly process for stretchable SCs. With a V2O5/PEDOT composite as the active material, the resulting stretchable SCs exhibited high areal specific capacitances up to 240 mF cm-2 and good capacitance retention at a strain of 50%. To demonstrate the facile assembly process, a stretchable wristband was fabricated by simply assembling SC cells in series to deliver a voltage higher than 2 V. Charging the wristband with a triboelectric nanogenerator (TENG) to light an LED was further demonstrated, indicating the potential to integrate our SCs with environmental energy harvesters for self-powered stretchable devices.
Thermoelectric microdevice fabricated by a MEMS-like electrochemical process
NASA Technical Reports Server (NTRS)
Snyder, G. Jeffrey; Lim, James R.; Huang, Chen-Kuo; Fleurial, Jean-Pierre
2003-01-01
Microelectromechanical systems (MEMS) are the basis of many rapidly growing technologies, because they combine miniature sensors and actuators with communications and electronics at low cost. Commercial MEMS fabrication processes are limited to silicon-based materials or two-dimensional structures. Here we show an inexpensive, electrochemical technique to build MEMS-like structures that contain several different metals and semiconductors with three-dimensional bridging structures. We demonstrate this technique by building a working microthermoelectric device. Using repeated exposure and development of multiple photoresist layers, several different metals and thermoelectric materials are fabricated in a three-dimensional structure. A device containing 126 n-type and p-type (Bi, Sb)2Te3 thermoelectric elements, 20 microm tall and 60 microm in diameter with bridging metal interconnects, was fabricated and cooling demonstrated. Such a device should be of technological importance for precise thermal control when operating as a cooler, and for portable power when operating as a micro power generator.
A General Approach for Fluid Patterning and Application in Fabricating Microdevices.
Huang, Zhandong; Yang, Qiang; Su, Meng; Li, Zheng; Hu, Xiaotian; Li, Yifan; Pan, Qi; Ren, Wanjie; Li, Fengyu; Song, Yanlin
2018-06-19
Engineering the fluid interface such as the gas-liquid interface is of great significance for solvent processing applications including functional material assembly, inkjet printing, and high-performance device fabrication. However, precisely controlling the fluid interface remains a great challenge owing to its flexibility and fluidity. Here, a general method to manipulate the fluid interface for fluid patterning using micropillars in the microchannel is reported. The principle of fluid patterning for immiscible fluid pairs including air, water, and oils is proposed. This understanding enables the preparation of programmable multiphase fluid patterns and assembly of multilayer functional materials to fabricate micro-optoelectronic devices. This general strategy of fluid patterning provides a promising platform to study the fundamental processes occurring on the fluid interface, and benefits applications in many subjects, such as microfluidics, microbiology, chemical analysis and detection, material synthesis and assembly, device fabrication, etc. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Design, Fabrication, Processing, and Testing of Micro-Electro-Mechanical Chemical Sensors
1995-12-01
sensor ...... .......................... 118 71. Resonating bridge parameter curves ...... ......................... 119 72. Low frequency oscillations...131 82. Heater V-I curve .. .. .. .. ... ... ... ... ... ... ... ... ..... 132 83. Frequency response of heated chemoresistor...devices, including devices that may be pre-stressed due to fabrication procedures (i.e. curve out of the plane after being released)? Due to their
Highly Flexible Dye-sensitized Solar Cells Produced by Sewing Textile Electrodes on Cloth
Yun, Min Ju; Cha, Seung I.; Seo, Seon Hee; Lee, Dong Y.
2014-01-01
Textile forms of solar cells possess special advantages over other types of solar cells, including their light weight, high flexibility, and mechanical robustness. Recent demand for wearable devices has promoted interest in the development of high-efficiency textile-based solar cells for energy suppliers. However, the weaving process occurs under high-friction, high-tension conditions that are not conducive to coated solar-cell active layers or electrodes deposited on the wire or strings. Therefore, a new approach is needed for the development of textile-based solar cells suitable for woven fabrics for wide-range application. In this report, we present a highly flexible, efficient DSSC, fabricated by sewing textile-structured electrodes onto casual fabrics such as cotton, silk, and felt, or paper, thereby forming core integrated DSSC structures with high energy-conversion efficiency (~5.8%). The fabricated textile-based DSSC devices showed high flexibility and high performance under 4-mm radius of curvature over thousands of deformation cycles. Considering the vast number of textile types, our textile-based DSSC devices offer a huge range of applications, including transparent, stretchable, wearable devices. PMID:24957920
Highly flexible dye-sensitized solar cells produced by sewing textile electrodes on cloth.
Yun, Min Ju; Cha, Seung I; Seo, Seon Hee; Lee, Dong Y
2014-06-24
Textile forms of solar cells possess special advantages over other types of solar cells, including their light weight, high flexibility, and mechanical robustness. Recent demand for wearable devices has promoted interest in the development of high-efficiency textile-based solar cells for energy suppliers. However, the weaving process occurs under high-friction, high-tension conditions that are not conducive to coated solar-cell active layers or electrodes deposited on the wire or strings. Therefore, a new approach is needed for the development of textile-based solar cells suitable for woven fabrics for wide-range application. In this report, we present a highly flexible, efficient DSSC, fabricated by sewing textile-structured electrodes onto casual fabrics such as cotton, silk, and felt, or paper, thereby forming core integrated DSSC structures with high energy-conversion efficiency (~5.8%). The fabricated textile-based DSSC devices showed high flexibility and high performance under 4-mm radius of curvature over thousands of deformation cycles. Considering the vast number of textile types, our textile-based DSSC devices offer a huge range of applications, including transparent, stretchable, wearable devices.
Laser direct-write for fabrication of three-dimensional paper-based devices.
He, P J W; Katis, I N; Eason, R W; Sones, C L
2016-08-16
We report the use of a laser-based direct-write (LDW) technique that allows the design and fabrication of three-dimensional (3D) structures within a paper substrate that enables implementation of multi-step analytical assays via a 3D protocol. The technique is based on laser-induced photo-polymerisation, and through adjustment of the laser writing parameters such as the laser power and scan speed we can control the depths of hydrophobic barriers that are formed within a substrate which, when carefully designed and integrated, produce 3D flow paths. So far, we have successfully used this depth-variable patterning protocol for stacking and sealing of multi-layer substrates, for assembly of backing layers for two-dimensional (2D) lateral flow devices and finally for fabrication of 3D devices. Since the 3D flow paths can also be formed via a single laser-writing process by controlling the patterning parameters, this is a distinct improvement over other methods that require multiple complicated and repetitive assembly procedures. This technique is therefore suitable for cheap, rapid and large-scale fabrication of 3D paper-based microfluidic devices.
Emerging Trends in Phosphorene Fabrication towards Next Generation Devices
Dhanabalan, Sathish Chander; Ponraj, Joice Sophia; Guo, Zhinan
2017-01-01
The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two‐dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications— this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few‐layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state‐of‐art of phosphorene‐based devices. In addition, a detailed presentation on the demand for future studies to promote well‐systemized fabrication methods towards large‐area, high‐yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered. PMID:28638779
Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.
Zimmler, Mariano A; Stichtenoth, Daniel; Ronning, Carsten; Yi, Wei; Narayanamurti, Venkatesh; Voss, Tobias; Capasso, Federico
2008-06-01
We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.
Mangla, Onkar; Roy, Savita; Ostrikov, Kostya (Ken)
2015-01-01
The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well. PMID:28344261
Gate- and Light-Tunable pn Heterojunction Microwire Arrays Fabricated via Evaporative Assembly.
Park, Jae Hoon; Kim, Jong Su; Choi, Young Jin; Lee, Wi Hyoung; Lee, Dong Yun; Cho, Jeong Ho
2017-02-01
One-dimensional (1D) nano/microwires have attracted considerable attention as versatile building blocks for use in diverse electronic, optoelectronic, and magnetic device applications. The large-area assembly of nano/microwires at desired positions presents a significant challenge for developing high-density electronic devices. Here, we demonstrated the fabrication of cross-stacked pn heterojunction diode arrays by integrating well-aligned inorganic and organic microwires fabricated via evaporative assembly. We utilized solution-processed n-type inorganic indium-gallium-zinc-oxide (IGZO) microwires and p-type organic 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) microwires. The formation of organic TIPS-PEN semiconductor microwire and their electrical properties were optimized by controlling both the amounts of added insulating polymer and the widths of the microwires. The resulting cross-stacked IGZO/TIPS-PEN microwire pn heterojunction devices exhibited rectifying behavior with a forward-to-reverse bias current ratio exceeding 10 2 . The ultrathin nature of the underlying n-type IGZO microwires yielded gate tunability in the charge transport behaviors, ranging from insulating to rectifying. The rectifying behaviors of the heterojunction devices could be modulated by controlling the optical power of the irradiated light. The fabrication of semiconducting microwires through evaporative assembly provides a facile and reliable approach to patterning or positioning 1D microwires for the fabrication of future flexible large-area electronics.
Fabrication of polyimide based microfluidic channels for biosensor devices
NASA Astrophysics Data System (ADS)
Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria
2015-03-01
The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabrication of the often needed microfluidic channels, have limitations in terms of their physicochemical properties. Therefore, the use of a multipurpose biocompatible material with better resistance to the chemical, thermal and electrical environment, along with capability of forming closed channel microfluidics is inevitable. This paper demonstrates a novel technique of fabricating microfluidic devices using polyimide (PI) which fulfills the aforementioned properties criteria. A fabrication process to pattern microfluidic channels, using partially cured PI, has been developed by using a dry etching method. The etching parameters are optimized and compared to those used for fully cured PI. Moreover, the formation of closed microfluidic channel on wafer level by bonding two partially cured PI layers or a partially cured PI to glass with high bond strength has been demonstrated. The reproducibility in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics.
Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken
2015-12-29
The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.
NASA Astrophysics Data System (ADS)
Rodionov, Ilya A.; Baburin, Alexander S.; Zverev, Alexander V.; Philippov, Ivan A.; Gabidulin, Aidar R.; Dobronosova, Alina A.; Ryzhova, Elena V.; Vinogradov, Alexey P.; Ivanov, Anton I.; Maklakov, Sergey S.; Baryshev, Alexander V.; Trofimov, Igor V.; Merzlikin, Alexander M.; Orlikovsky, Nikolay A.; Rizhikov, Ilya A.
2017-08-01
During last 20 years, great results in metamaterials and plasmonic nanostructures fabrication were obtained. However, large ohmic losses in metals and mass production compatibility still represent the most serious challenge that obstruct progress in the fields of metamaterials and plasmonics. Many recent research are primarily focused on developing low-loss alternative materials, such as nitrides, II-VI semiconductor oxides, high-doped semiconductors, or two-dimensional materials. In this work, we demonstrate that our perfectly fabricated silver films can be an effective low-loss material system, as theoretically well-known. We present a fabrication technology of plasmonic and metamaterial nanodevices on transparent (quartz, mica) and non-transparent (silicon) substrates by means of e-beam lithography and ICP dry etch instead of a commonly-used focused ion beam (FIB) technology. We eliminate negative influence of litho-etch steps on silver films quality and fabricate square millimeter area devices with different topologies and perfect sub-100 nm dimensions reproducibility. Our silver non-damage fabrication scheme is tested on trial manufacture of spasers, plasmonic sensors and waveguides, metasurfaces, etc. These results can be used as a flexible device manufacture platform for a broad range of practical applications in optoelectronics, communications, photovoltaics and biotechnology.
NASA Astrophysics Data System (ADS)
Hou, Quanwen; Zhao, Xiaopeng; Meng, Tong; Liu, Cunliang
2016-09-01
Thermal metamaterials and devices based on transformation thermodynamics often require materials with anisotropic and inhomogeneous thermal conductivities. In this study, still based on the concept of transformation thermodynamics, we designed a planar illusion thermal device, which can delocalize a heat source in the device such that the temperature profile outside the device appears to be produced by a virtual source at another position. This device can be constructed by only one kind of material with constant anisotropic thermal conductivity. The condition which should be satisfied by the device is provided, and the required anisotropic thermal conductivity is then deduced theoretically. This study may be useful for the designs of metamaterials or devices since materials with constant anisotropic parameters have great facility in fabrication. A prototype device has been fabricated based on a composite composed by two naturally occurring materials. The experimental results validate the effectiveness of the device.
Simultaneous RGB lasing from a single-chip polymer device.
Yamashita, Kenichi; Takeuchi, Nobutaka; Oe, Kunishige; Yanagi, Hisao
2010-07-15
This Letter describes the fabrication and operation of a single-chip white-laser device. The laser device has a multilayered structure consisting of three laser layers. Each laser layer comprises polymer claddings and a waveguide core doped with organic dye. In each laser layer, grating corrugations were fabricated by UV-nanoimprint lithography that act as distributed-feedback cavity structures. Under optical pumping, lasing output with red, green, and blue colors was simultaneously obtained from the sample edge.
Ultra-slim flexible glass for roll-to-roll electronic device fabrication
NASA Astrophysics Data System (ADS)
Garner, Sean; Glaesemann, Scott; Li, Xinghua
2014-08-01
As displays and electronics evolve to become lighter, thinner, and more flexible, the choice of substrate continues to be critical to their overall optimization. The substrate directly affects improvements in the designs, materials, fabrication processes, and performance of advanced electronics. With their inherent benefits such as surface quality, optical transmission, hermeticity, and thermal and dimensional stability, glass substrates enable high-quality and long-life devices. As substrate thicknesses are reduced below 200 μm, ultra-slim flexible glass continues to provide these inherent benefits to high-performance flexible electronics such as displays, touch sensors, photovoltaics, and lighting. In addition, the reduction in glass thickness also allows for new device designs and high-throughput, continuous manufacturing enabled by R2R processes. This paper provides an overview of ultra-slim flexible glass substrates and how they enable flexible electronic device optimization. Specific focus is put on flexible glass' mechanical reliability. For this, a combination of substrate design and process optimizations has been demonstrated that enables R2R device fabrication on flexible glass. Demonstrations of R2R flexible glass processes such as vacuum deposition, photolithography, laser patterning, screen printing, slot die coating, and lamination have been made. Compatibility with these key process steps has resulted in the first demonstration of a fully functional flexible glass device fabricated completely using R2R processes.
Design and fabrication of a magnetically actuated non-invasive reusable drug delivery device.
Dsa, Joyline; Goswami, Manish; Singh, B R; Bhatt, Nidhi; Sharma, Pankaj; Chauhan, Meenakshi K
2018-07-01
We present a novel approach of designing and fabricating a noninvasive drug delivery device which is capable of delivering the drug to the target site in a controlled manner. The device utilizes a reservoir which can be reused once the drug has completely diffused from it. This micro-reservoir based fabricated device has been successfully tested using niosomes of insulin drug filled in, which was then sealed with a magnetic membrane of 20 µm thick and was actuated by applying magnetic field. The deflection of the membrane on application of magnetic field results in the drug release from the reservoir. The discharge of the drug solution and the release rates was controlled by external magnetic field. The simulation of the membrane deflection using COMSOL software was carried out to optimize the concentration of the ferrous nanopowder in PDMS matrix. The characterization of the devices was implemented in-vitro on water and in-vivo on Wistar rats. It was also validated using high-performance liquid chromatography (HPLC) by observing characteristic peak of insulin. The blood samples showed the retention time of 2.79 min at λ max of 280 nm which further authenticated the effectiveness of the proposed work. This noninvasive fabricated device provides reusability, precise control and can enable the patient or a physician to actively administrate the drug when required.
Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer
2017-01-01
Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323
NASA Astrophysics Data System (ADS)
Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer
2017-10-01
Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.
Chen, Jun-Yang; Lau, Yong-Chang; Coey, J M D; Li, Mo; Wang, Jian-Ping
2017-02-02
The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.
Fabrication of biomolecules self-assembled on Au nanodot array for bioelectronic device.
Lee, Taek; Kumar, Ajay Yagati; Yoo, Si-Youl; Jung, Mi; Min, Junhong; Choi, Jeong-Woo
2013-09-01
In the present study, an nano-platform composed of Au nanodot arrays on which biomolecules could be self-assembled was developed and investigated for a stable bioelectronic device platform. Au nanodot pattern was fabricated using a nanoporous alumina template. Two different biomolecules, a cytochrome c and a single strand DNA (ssDNA), were immobilized on the Au nanodot arrays. Cytochorme c and single stranded DNA could be immobilized on the Au nanodot using the chemical linker 11-MUA and thiol-modification by covalent bonding, respectively. The atomic structure of the fabricated nano-platform device was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrical conductivity of biomolecules immobilized on the Au nanodot arrays was confirmed by scanning tunneling spectroscopy (STS). To investigate the activity of biomolecule-immobilized Au-nano dot array, the cyclic voltammetry was carried out. This proposed nano-platform device, which is composed of biomolecules, can be used for the construction of a novel bioelectronic device.
Zheng, Z. Q.; Yao, J. D.; Wang, B.; Yang, G. W.
2015-01-01
In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparentand working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90o. Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices. PMID:26076705
Zheng, Z Q; Yao, J D; Wang, B; Yang, G W
2015-06-16
In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparent, and working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90(o). Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices.
Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook
2016-01-01
A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻−1), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes. PMID:27808221
NASA Astrophysics Data System (ADS)
Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook
2016-11-01
A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻-1), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes.
Jin, Won-Yong; Ginting, Riski Titian; Ko, Keum-Jin; Kang, Jae-Wook
2016-11-03
A novel approach for the fabrication of ultra-smooth and highly bendable substrates consisting of metal grid-conducting polymers that are fully embedded into transparent substrates (ME-TCEs) was successfully demonstrated. The fully printed ME-TCEs exhibited ultra-smooth surfaces (surface roughness ~1.0 nm), were highly transparent (~90% transmittance at a wavelength of 550 nm), highly conductive (sheet resistance ~4 Ω ◻ -1 ), and relatively stable under ambient air (retaining ~96% initial resistance up to 30 days). The ME-TCE substrates were used to fabricate flexible organic solar cells and organic light-emitting diodes exhibiting devices efficiencies comparable to devices fabricated on ITO/glass substrates. Additionally, the flexibility of the organic devices did not degrade their performance even after being bent to a bending radius of ~1 mm. Our findings suggest that ME-TCEs are a promising alternative to indium tin oxide and show potential for application toward large-area optoelectronic devices via fully printing processes.
Stretchable electronics for wearable and high-current applications
NASA Astrophysics Data System (ADS)
Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.
2016-04-01
Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.
Tungsten bridge for the low energy ignition of explosive and energetic materials
Benson, David A.; Bickes, Jr., Robert W.; Blewer, Robert S.
1990-01-01
A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.
Simple and inexpensive microfluidic devices for the generation of monodisperse multiple emulsions
NASA Astrophysics Data System (ADS)
Li, Er Qiang; Zhang, Jia Ming; Thoroddsen, Sigurdur T.
2014-01-01
Droplet-based microfluidic devices have become a preferred versatile platform for various fields in physics, chemistry and biology. Polydimethylsiloxane soft lithography, the mainstay for fabricating microfluidic devices, usually requires the usage of expensive apparatus and a complex manufacturing procedure. Here, we report the design and fabrication of simple and inexpensive microfluidic devices based on microscope glass slides and pulled glass capillaries, for generating monodisperse multiple emulsions. The advantages of our method lie in a simple manufacturing procedure, inexpensive processing equipment and flexibility in the surface modification of the designed microfluidic devices. Different types of devices have been designed and tested and the experimental results demonstrated their robustness for preparing monodisperse single, double, triple and multi-component emulsions.
Yuen, Po Ki; DeRosa, Michael E
2011-10-07
This article presents a simple, low-cost method of fabrication and the applications of flexible polystyrene microfluidic devices with three-dimensional (3D) interconnected microporous walls based on treatment using a solvent/non-solvent mixture at room temperature. The complete fabrication process from device design concept to working device can be completed in less than an hour in a regular laboratory setting, without the need for expensive equipment. Microfluidic devices were used to demonstrate gas generation and absorption reactions by acidifying water with carbon dioxide (CO(2)) gas. By selectively treating the microporous structures with oxygen plasma, acidification of water by acetic acid (distilled white vinegar) perfusion was also demonstrated with the same device design.
Photolithographic patterning of vacuum-deposited organic light emitting devices
NASA Astrophysics Data System (ADS)
Tian, P. F.; Burrows, P. E.; Forrest, S. R.
1997-12-01
We demonstrate a photolithographic technique to fabricate vacuum-deposited organic light emitting devices. Photoresist liftoff combined with vertical deposition of the emissive organic materials and the metal cathode, followed by oblique deposition of a metal cap, avoids the use of high processing temperatures and the exposure of the organic materials to chemical degradation. The unpackaged devices show no sign of deterioration in room ambient when compared with conventional devices fabricated using low-resolution, shadow mask patterning. Furthermore, the devices are resistant to rapid degradation when operated in air for extended periods. This work illustrates a potential foundation for the volume production of very high-resolution, full color, flat panel displays based on small molecular weight organic light emitting devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul
Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.
Recent advances in low-cost microfluidic platforms for diagnostic applications.
Tomazelli Coltro, Wendell Karlos; Cheng, Chao-Min; Carrilho, Emanuel; de Jesus, Dosil Pereira
2014-08-01
The use of inexpensive materials and cost-effective manufacturing processes for mass production of microfluidic devices is very attractive and has spurred a variety of approaches. Such devices are particularly suited for diagnostic applications in limited resource settings. This review describes the recent and remarkable advances in the use of low-cost substrates for the development of microfluidic devices for diagnostics and clinical assays. Thus, a plethora of new and improved fabrication methods, designs, capabilities, detections, and applications of microfluidic devices fabricated with paper, plastic, and threads are covered. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
From dead leaves to sustainable organic resistive switching memory.
Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong
2018-03-01
An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.
Cheng, Chuanwei; Gao, Junshan; Xu, Guoyue; Zhang, Haiqian; Li, Yingying; Luo, Yan
2009-05-01
Tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanine (CuPc) nanowires synthesized by a facile, low temperature self-assembled route, were incorporated into nano-devices: photoswitch and organic field-effect transistor. The devices were capable of switching on/off reversibly and fast by turning the 808 nm infrared light on/off. And the carrier mobility micro of CuPc nanowires incorporated in the devices was -0.02 cm2/V x s. The prelimenary results in this study show the potential application of metal phthalocyanine nanowires in low-cost fabrication of nano photo-electric devices.
NASA Technical Reports Server (NTRS)
Cukor, P. M.; Chapman, R. A.
1978-01-01
The uncertainties and associated costs involved in selecting and designing a particulate control device to meet California's air emission regulations are considered. The basic operating principles of electrostatic precipitators and fabric filters are discussed, and design parameters are identified. The size and resulting cost of the control device as a function of design parameters is illustrated by a case study for an 800 MW coal-fired fired utility boiler burning a typical southwestern subbituminous coal. The cost of selecting an undersized particulate control device is compared with the cost of selecting an oversized device.
ZnO nanorods for electronic and photonic device applications
NASA Astrophysics Data System (ADS)
Yi, Gyu-Chul; Yoo, Jinkyoung; Park, Won Il; Jung, Sug Woo; An, Sung Jin; Kim, H. J.; Kim, D. W.
2005-11-01
We report on catalyst-free growth of ZnO nanorods and their nano-scale electrical and optical device applications. Catalyst-free metalorganic vapor-phase epitaxy (MOVPE) enables fabrication of size-controlled high purity ZnO single crystal nanorods. Various high quality nanorod heterostructures and quantum structures based on ZnO nanorods were also prepared using the MOVPE method and characterized using scanning electron microscopy, transmission electron microscopy, and optical spectroscopy. From the photoluminescence spectra of ZnO/Zn 0.8Mg 0.2O nanorod multi-quantum-well structures, in particular, we observed a systematic blue-shift in their PL peak position due to quantum confinement effect of carriers in nanorod quantum structures. For ZnO/ZnMgO coaxial nanorod heterostructures, photoluminescence intensity was significantly increased presumably due to surface passivation and carrier confinement. In addition to the growth and characterizations of ZnO nanorods and their quantum structures, we fabricated nanoscale electronic devices based on ZnO nanorods. We report on fabrication and device characteristics of metal-oxidesemiconductor field effect transistors (MOSFETs), Schottky diodes, and metal-semiconductor field effect transistors (MESFETs) as examples of the nanodevices. In addition, electroluminescent devices were fabricated using vertically aligned ZnO nanorods grown p-type GaN substrates, exhibiting strong visible electroluminescence.
Self-Aligned van der Waals Heterojunction Diodes and Transistors.
Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C
2018-02-14
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
Demonstration of nanoimprinted hyperlens array for high-throughput sub-diffraction imaging
NASA Astrophysics Data System (ADS)
Byun, Minsueop; Lee, Dasol; Kim, Minkyung; Kim, Yangdoo; Kim, Kwan; Ok, Jong G.; Rho, Junsuk; Lee, Heon
2017-04-01
Overcoming the resolution limit of conventional optics is regarded as the most important issue in optical imaging science and technology. Although hyperlenses, super-resolution imaging devices based on highly anisotropic dispersion relations that allow the access of high-wavevector components, have recently achieved far-field sub-diffraction imaging in real-time, the previously demonstrated devices have suffered from the extreme difficulties of both the fabrication process and the non-artificial objects placement. This results in restrictions on the practical applications of the hyperlens devices. While implementing large-scale hyperlens arrays in conventional microscopy is desirable to solve such issues, it has not been feasible to fabricate such large-scale hyperlens array with the previously used nanofabrication methods. Here, we suggest a scalable and reliable fabrication process of a large-scale hyperlens device based on direct pattern transfer techniques. We fabricate a 5 cm × 5 cm size hyperlenses array and experimentally demonstrate that it can resolve sub-diffraction features down to 160 nm under 410 nm wavelength visible light. The array-based hyperlens device will provide a simple solution for much more practical far-field and real-time super-resolution imaging which can be widely used in optics, biology, medical science, nanotechnology and other closely related interdisciplinary fields.
Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.
Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B-H; Bao, Zhenan
2018-03-01
Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.
Cesewski, Ellen; Haring, Alexander P; Tong, Yuxin; Singh, Manjot; Thakur, Rajan; Laheri, Sahil; Read, Kaitlin A; Powell, Michael D; Oestreich, Kenneth J; Johnson, Blake N
2018-06-13
Three-dimensional (3D) printing now enables the fabrication of 3D structural electronics and microfluidics. Further, conventional subtractive manufacturing processes for microelectromechanical systems (MEMS) relatively limit device structure to two dimensions and require post-processing steps for interface with microfluidics. Thus, the objective of this work is to create an additive manufacturing approach for fabrication of 3D microfluidic-based MEMS devices that enables 3D configurations of electromechanical systems and simultaneous integration of microfluidics. Here, we demonstrate the ability to fabricate microfluidic-based acoustofluidic devices that contain orthogonal out-of-plane piezoelectric sensors and actuators using additive manufacturing. The devices were fabricated using a microextrusion 3D printing system that contained integrated pick-and-place functionality. Additively assembled materials and components included 3D printed epoxy, polydimethylsiloxane (PDMS), silver nanoparticles, and eutectic gallium-indium as well as robotically embedded piezoelectric chips (lead zirconate titanate (PZT)). Electrical impedance spectroscopy and finite element modeling studies showed the embedded PZT chips exhibited multiple resonant modes of varying mode shape over the 0-20 MHz frequency range. Flow visualization studies using neutrally buoyant particles (diameter = 0.8-70 μm) confirmed the 3D printed devices generated bulk acoustic waves (BAWs) capable of size-selective manipulation, trapping, and separation of suspended particles in droplets and microchannels. Flow visualization studies in a continuous flow format showed suspended particles could be moved toward or away from the walls of microfluidic channels based on selective actuation of in-plane or out-of-plane PZT chips. This work suggests additive manufacturing potentially provides new opportunities for the design and fabrication of acoustofluidic and microfluidic devices.
Skin electronics from scalable fabrication of an intrinsically stretchable transistor array
NASA Astrophysics Data System (ADS)
Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R.; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M.; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B.-H.; Bao, Zhenan
2018-03-01
Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable—like human skin—would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.
NASA Astrophysics Data System (ADS)
Gerke, Tim D.
Presented in this thesis is an investigation into aperiodic volume optical devices. The three main topics of research and discussion are the aperiodic volume optical devices that we call computer-generated volume holograms (CGVH), defects within periodic 3D photonic crystals, and non-periodic, but ordered 3D quasicrystals. The first of these devices, CGVHs, are designed and investigated numerically and experimentally. We study the performance of multi-layered amplitude computer-generated volume holograms in terms of efficiency and angular/frequency selectivity. Simulation results show that such aperiodic devices can increase diffraction efficiency relative to periodic amplitude volume holograms while maintaining angular and wavelength selectivity. CGVHs are also designed as voxelated volumes using a new projection optimization algorithm. They are investigated using a volumetric diffraction simulation and a standard 3D beam propagation technique as well as experimentally. Both simulation and experiment verify that the structures function according to their design. These represent the first diffractive structures that have the capacity for generating arbitrary transmission and reflection wave fronts and that provide the ability for multiplexing arbitrary functionality given different illumination conditions. Also investigated and discussed in this thesis are 3D photonic crystals and quasicrystals. We demonstrate that these devices can be fabricated using a femtosecond laser direct writing system that is particularly appropriate for fabrication of such arbitrary 3D structures. We also show that these devices can provide 3D partial bandgaps which could become complete bandgaps if fabricated using high index materials or by coating lower index materials with high index metals. Our fabrication method is particularly suited to the fabrication of engineered defects within the periodic or quasi-periodic systems. We demonstrate the potential for fabricating defects within periodic and quasi-periodic systems for the manipulation of light in the IR regime. The general thesis of this document is that aperiodic three-dimensional structures provide additional degrees of freedom that can be utilized to improve on the performance of periodic volume devices. The results we will discuss suggest that, under certain circumstances, a departure from the Bragg paradigm provides enhanced volume diffraction properties.
A programmable nanoreplica molding for the fabrication of nanophotonic devices.
Liu, Longju; Zhang, Jingxiang; Badshah, Mohsin Ali; Dong, Liang; Li, Jingjing; Kim, Seok-min; Lu, Meng
2016-03-01
The ability to fabricate periodic structures with sub-wavelength features has a great potential for impact on integrated optics, optical sensors, and photovoltaic devices. Here, we report a programmable nanoreplica molding process to fabricate a variety of sub-micrometer periodic patterns using a single mold. The process utilizes a stretchable mold to produce the desired periodic structure in a photopolymer on glass or plastic substrates. During the replica molding process, a uniaxial force is applied to the mold and results in changes of the periodic structure, which resides on the surface of the mold. Direction and magnitude of the force determine the array geometry, including the lattice constant and arrangement. By stretching the mold, 2D arrays with square, rectangular, and triangular lattice structures can be fabricated. As one example, we present a plasmonic crystal device with surface plasmon resonances determined by the force applied during molding. In addition, photonic crystal slabs with different array patterns are fabricated and characterized. This unique process offers the capability of generating various periodic nanostructures rapidly and inexpensively.
A programmable nanoreplica molding for the fabrication of nanophotonic devices
Liu, Longju; Zhang, Jingxiang; Badshah, Mohsin Ali; Dong, Liang; Li, Jingjing; Kim, Seok-min; Lu, Meng
2016-01-01
The ability to fabricate periodic structures with sub-wavelength features has a great potential for impact on integrated optics, optical sensors, and photovoltaic devices. Here, we report a programmable nanoreplica molding process to fabricate a variety of sub-micrometer periodic patterns using a single mold. The process utilizes a stretchable mold to produce the desired periodic structure in a photopolymer on glass or plastic substrates. During the replica molding process, a uniaxial force is applied to the mold and results in changes of the periodic structure, which resides on the surface of the mold. Direction and magnitude of the force determine the array geometry, including the lattice constant and arrangement. By stretching the mold, 2D arrays with square, rectangular, and triangular lattice structures can be fabricated. As one example, we present a plasmonic crystal device with surface plasmon resonances determined by the force applied during molding. In addition, photonic crystal slabs with different array patterns are fabricated and characterized. This unique process offers the capability of generating various periodic nanostructures rapidly and inexpensively. PMID:26925828
NASA Astrophysics Data System (ADS)
Huang, Xiaoping; Zhang, Peifeng; Lin, En; Wang, Peng; Mei, Mingwei; Huang, Qiuying; Jiao, Jiao; Zhao, Qing
2017-09-01
We present the design and fabrication of a novel regularly arrayed plasmonic nanolasers. This main microstructure of the device is composed of a hexagonal array of n-ZnO/p-GaN nanoheterojunctions fabricated using the micro-fabrication method. Furthermore, the optically pumped lasing in the device is demonstrated. The spectroscopy characterization results of the device show that the surface plasmon excited around the NWs surface can be used to stimulate and strongly compress the optical modes in the NW cavity. This electromagnetic confinement effect is employed to optimize the beam quality and increase the light intensity compared to the laser fabricated with the bare NWs array. The impact of the array arrangement on the coherent combining efficiency of the arrayed nanolasers has been numerically studied. The results show that the arrayed hexagonal nanolasers could improve the combining efficiency compared to the nanolaser with the randomly positioned array. Qualitatively, these calculated results agree well with the experimental results of the laser beam spot mapping. This demonstrates the scope for using such architectures to improve the combination efficiency of the arrayed nanolasers.
NASA Astrophysics Data System (ADS)
Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan
2015-10-01
Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.
A pH sensor based on electric properties of nanotubes on a glass substrate
Nakamura, Motonori; Ishii, Atsushi; Subagyo, Agus; Hosoi, Hirotaka; Sueoka, Kazuhisa; Mukasa, Koichi
2007-01-01
We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling agent on the nanotube. The device showed properties of ann-type field effect transistor when a potential was applied to the nanotube from the top gate electrode. Before fabrication of the insulating layer, the device showed that thep-type field effect transistor and the current through the source and drain electrodes depend on the buffer pH. The current increases with decreasing pH of the CNT solution. This device, which can detect pH, is applicable for use as a biosensor through modification of the CNT surface. PMID:21806848
Light-emitting nanolattices with enhanced brightness
NASA Astrophysics Data System (ADS)
Ng, Ryan C.; Mandal, Rajib; Anthony, Rebecca J.; Greer, Julia R.
2017-02-01
Three-dimensional (3D) photonic crystals have potential in solid state lighting applications due to their advantages over conventional planar thin film devices. Periodicity in a photonic crystal structure enables engineering of the density of states to improve spontaneous light emission according to Fermi's golden rule. Unlike planar thin films, which suffer significantly from total internal reflection, a 3D architectured structure is distributed in space with many non-flat interfaces, which facilitates a substantial enhancement in light extraction. We demonstrate the fabrication of 3D nano-architectures with octahedron geometry that utilize luminescing silicon nanocrystals as active media with an aluminum cathode and indium tin oxide anode towards the realization of a 3D light emitting device. The developed fabrication procedure allows charge to pass through the nanolattice between two contacts for electroluminescence. These initial fabrication efforts suggest that 3D nano-architected devices are realizable and can reach greater efficiencies than planar devices.
Shao, Yuchuan; Wang, Qi; Dong, Qingfeng; ...
2015-06-25
The efficiency of organometal trihalide perovskites (OTP) solar cells have reached that parity of single crystal silicon, and its nature abundant raw material and solution-process capability promise a bright future for commercialization. However, the vacuum based techniques for metal electrode deposition and additional encapsulation layer increase the cost of the perovskite solar cells dramatically and impede their commercialization process. Here, we report a vacuum-free low temperature lamination technique to fabricate the top electrode by commercial conductive tapes (C-tape). The simple fabrication method yields good quality contact and high efficiency device of 12.7%. The C-tapes also encapsulated the devices effectively, resultingmore » in greatly improved device stability. As a result, the combination of lamination of electrodes and encapsulation layers into a single step significantly reduce the cost of device fabrication.« less
Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof
Mihailovich, Robert E.; Papavasiliou, Alex P.; Mehrotra, Vivek; Stupar, Philip A.; Borwick, III, Robert L.; Ganguli, Rahul; DeNatale, Jeffrey F.
2017-03-28
A micro-fabricated electromagnetic device is provided for on-circuit integration. The electromagnetic device includes a core. The core has a plurality of electrically insulating layers positioned alternatingly between a plurality of magnetic layers to collectively form a continuous laminate having alternating magnetic and electrically insulating layers. The electromagnetic device includes a coil embedded in openings of the semiconductor substrate. An insulating material is positioned in the cavity and between the coil and an inner surface of the core. A method of manufacturing the electromagnetic device includes providing a semiconductor substrate having openings formed therein. Windings of a coil are electroplated and embedded in the openings. The insulating material is coated on or around an exposed surface of the coil. Alternating magnetic layers and electrically insulating layers may be micro-fabricated and electroplated as a single and substantially continuous segment on or around the insulating material.
Method of fabricating an optoelectronic device having a bulk heterojunction
Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ
2008-10-14
A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
Gallium Arsenide Monolithic Optoelectronic Circuits
NASA Astrophysics Data System (ADS)
Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.
1981-07-01
The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.
Recent Progress on Stretchable Electronic Devices with Intrinsically Stretchable Components.
Trung, Tran Quang; Lee, Nae-Eung
2017-01-01
Stretchable electronic devices with intrinsically stretchable components have significant inherent advantages, including simple fabrication processes, a high integrity of the stacked layers, and low cost in comparison with stretchable electronic devices based on non-stretchable components. The research in this field has focused on developing new intrinsically stretchable components for conductors, semiconductors, and insulators. New methodologies and fabrication processes have been developed to fabricate stretchable devices with intrinsically stretchable components. The latest successful examples of stretchable conductors for applications in interconnections, electrodes, and piezoresistive devices are reviewed here. Stretchable conductors can be used for electrode or sensor applications depending on the electrical properties of the stretchable conductors under mechanical strain. A detailed overview of the recent progress in stretchable semiconductors, stretchable insulators, and other novel stretchable materials is also given, along with a discussion of the associated technological innovations and challenges. Stretchable electronic devices with intrinsically stretchable components such as field-effect transistors (FETs), photodetectors, light-emitting diodes (LEDs), electronic skins, and energy harvesters are also described and a new strategy for development of stretchable electronic devices is discussed. Conclusions and future prospects for the development of stretchable electronic devices with intrinsically stretchable components are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Kawai, Jun; Kawabata, Miki; Oyama, Daisuke; Uehara, Gen
We have developed fabrication technique of superconducting quantum interference device (SQUID) magnetometers based on Nb/AlAlOx/Nb junctions directly on a glass epoxy polyimide resin substrate, which has copper terminals embedded in advance. The advantage of this method is that no additional substrate and wirebonds are needed for assembly. Compared to conventional SQUID magnetometers, which are assembled with a SQUID chip fabricated on a Si substrate and wirebonding technique, low risk of disconnection can be expected. A directly-coupled multi-loop SQUID magnetometer fabricated with this method has as good noise performance as a SQUID magnetometer with the same design fabricated on a Si wafer. The magnetometer sustained its performance through thermal cycle test 13 times so far.
Methods and devices for fabricating three-dimensional nanoscale structures
Rogers, John A.; Jeon, Seokwoo; Park, Jangung
2010-04-27
The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.
Electron-beam lithography for micro and nano-optical applications
NASA Technical Reports Server (NTRS)
Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.
2005-01-01
Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.
Optical device fabrication using femtosecond laser processing with glass-hologram
NASA Astrophysics Data System (ADS)
Suzuki, Jun'ichi; Arima, Yasunori; Tanaka, Shuhei
2011-03-01
Using femtosecond laser processing with glass-hologram, fabrication of 1cm-long straight waveguide and X-coupler is reported in this paper. We design and fabricate 4-level glass-hologram which generates 1cm-long straight line intensity. We fabricate 1cm-long waveguides inside fused silica at one shot exposure with the glass-hologram. We investigate the waveguide performance of near field pattern and propagation loss at wavelength of 1550nm. The near field pattern is almost circular shape. The propagation loss at 1550nm is estimated to be < 1.0 dB/cm. As an example of an optical device consisting of straight waveguides, we fabricate X-coupler or 2x2 coupler using straight line waveguides, and observe the output power ratio depending on crossing angle.
Thin film solar cell configuration and fabrication method
Menezes, Shalini
2009-07-14
A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.
Front and backside processed thin film electronic devices
Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang
2010-10-12
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Design and fabrication of multimode interference couplers based on digital micro-mirror system
NASA Astrophysics Data System (ADS)
Wu, Sumei; He, Xingdao; Shen, Chenbo
2008-03-01
Multimode interference (MMI) couplers, based on the self-imaging effect (SIE), are accepted popularly in integrated optics. According to the importance of MMI devices, in this paper, we present a novel method to design and fabricate MMI couplers. A technology of maskless lithography to make MMI couplers based on a smart digital micro-mirror device (DMD) system is proposed. A 1×4 MMI device is designed as an example, which shows the present method is efficient and cost-effective.
Thin-Film Photovoltaic Device Fabrication
NASA Technical Reports Server (NTRS)
Scofield, John H.
2003-01-01
This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Crowder, M.A.; Sposili, R.S.; Cho, H.S.
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFT`s) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFT`s exhibit properties and a level of performance that are superior to polycrystalline Si-based TFT`s and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. The authors attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT`s.
Graphene Transistor fabricated by Helium Ion Milling
NASA Astrophysics Data System (ADS)
Zhang, Kaiwen; Zhao, Xiangming; Xu, Xiangfan; Vignesh, Viswanathan; Li, Baowen; Pickard, Daniel; Özyilmaz, Barbaros; Department of Physics, National University of Singapore Team; Department of Electrical; Computer Engineering, National University of Singapore Team; eNanoCore, National University of Singapore Team
2011-03-01
We report the direct patterning of graphene for various nano-device applications. The Helium Ion Microscope (HIM), able to resolve nano-scale features on solid samples with an edge resolution of a mere 0.25 nm, has a number of attributes which make it attractive for the imaging of graphene structures. Even more compelling is the ability to directly modify graphene, through surface sputtering, enabling direct pattern transfer for the fabrication of graphene devices. The integration of the HIM with a vector pattern generator (Nano Pattern Generation System, NPGS), provides the capability to directly pattern graphene into nano-ribbons. We have successfully fabricated sub-100nm graphene nano-ribbon devices on Si/SiO2 substrate. Resistance measurement has been made as a function of temperature.
NASA Astrophysics Data System (ADS)
Wu, Hao-Di; Wang, Feng-Xia; Zhang, Meng; Pan, Ge-Bo
2015-07-01
Coronene.TCNQ cocrystal microrods, coronene microrods, and TCNQ microsheets were constructed by a drop-casting method. Prototype devices were fabricated and their field-effect-transistor (FET) performances were investigated. It is found that coronene.TCNQ microrods had exhibited an n-type characteristic and showed better FET performances than TCNQ microsheets.Coronene.TCNQ cocrystal microrods, coronene microrods, and TCNQ microsheets were constructed by a drop-casting method. Prototype devices were fabricated and their field-effect-transistor (FET) performances were investigated. It is found that coronene.TCNQ microrods had exhibited an n-type characteristic and showed better FET performances than TCNQ microsheets. Electronic supplementary information (ESI) available: Device fabrication and measurements
Li, Chunmei; Hotz, Blake; Ling, Shengjie; Guo, Jin; Haas, Dylan S.; Marelli, Benedetto; Omenetto, Fiorenzo; Lin, Samuel J.; Kaplan, David L.
2016-01-01
Silk fibers spun by silkworms and spiders exhibit exceptional mechanical properties with a unique combination of strength, extensibility and toughness. In contrast, the mechanical properties of regenerated silk materials can be tuned through control of the fabrication process. Here we introduce a biomimetic, all-aqueous process, to obtain bulk regenerated silk-based materials for the fabrication of functionalized orthopedic devices. The silk materials generated in the process replicate the nano-scale structure of natural silk fibers and possess excellent mechanical properties. The biomimetic materials demonstrated excellent machinability, providing a path towards the fabrication of a new family of resorbable orthopedic devices where organic solvents are avoided, thus allowing functionalization with bioactive molecules to promote bone remodeling and integration. PMID:27697669
One-step direct transfer of pristine single-walled carbon nanotubes for functional nanoelectronics.
Wu, Chung Chiang; Liu, Chang Hua; Zhong, Zhaohui
2010-03-10
We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical resonators with gate-tunable resonance frequencies. A fully suspended SWNT p-n diode has also been demonstrated with the diode ideality factor equal to 1. Our method eliminates the organic residues on SWNTs resulting from conventional lithography and solution processing. The results open up opportunities for the fundamental study of electron transport physics in ultraclean SWNTs and for room temperature fabrication of novel functional devices based on pristine SWNTs.
Melding Vapor-Phase Organic Chemistry and Textile Manufacturing To Produce Wearable Electronics.
Andrew, Trisha L; Zhang, Lushuai; Cheng, Nongyi; Baima, Morgan; Kim, Jae Joon; Allison, Linden; Hoxie, Steven
2018-04-17
Body-mountable electronics and electronically active garments are the future of portable, interactive devices. However, wearable devices and electronic garments are demanding technology platforms because of the large, varied mechanical stresses to which they are routinely subjected, which can easily abrade or damage microelectronic components and electronic interconnects. Furthermore, aesthetics and tactile perception (or feel) can make or break a nascent wearable technology, irrespective of device metrics. The breathability and comfort of commercial fabrics is unmatched. There is strong motivation to use something that is already familiar, such as cotton/silk thread, fabrics, and clothes, and imperceptibly adapt it to a new technological application. (24) Especially for smart garments, the intrinsic breathability, comfort, and feel of familiar fabrics cannot be replicated by devices built on metalized synthetic fabrics or cladded, often-heavy designer fibers. We propose that the strongest strategy to create long-lasting and impactful electronic garments is to start with a mass-produced article of clothing, fabric, or thread/yarn and coat it with conjugated polymers to yield various textile circuit components. Commonly available, mass-produced fabrics, yarns/threads, and premade garments can in theory be transformed into a plethora of comfortably wearable electronic devices upon being coated with films of electronically active conjugated polymers. The definitive hurdle is that premade garments, threads, and fabrics have densely textured, three-dimensional surfaces that display roughness over a large range of length scales, from microns to millimeters. Tremendous variation in the surface morphology of conjugated-polymer-coated fibers and fabrics can be observed with different coating or processing conditions. In turn, the morphology of the conjugated polymer active layer determines the electrical performance and, most importantly, the device ruggedness and lifetime. Reactive vapor coating methods allow a conjugated polymer film to be directly formed on the surface of any premade garment, prewoven fabric, or fiber/yarn substrate without the need for specialized processing conditions, surface pretreatments, detergents, or fixing agents. This feature allows electronic coatings to be applied at the end of existing, high-throughput textile and garment manufacturing routines, irrespective of dye content or surface finish of the final textile. Furthermore, reactive vapor coating produces conductive materials without any insulating moieties and yields uniform and conformal films on fiber/fabric surfaces that are notably wash- and wear-stable and can withstand mechanically demanding textile manufacturing routines. These unique features mean that rugged and practical textile electronic devices can be created using sewing, weaving, or knitting procedures without compromising or otherwise affecting the surface electronic coating. In this Account, we highlight selected electronic fabrics and garments created by melding reactive vapor deposition with traditional textile manipulation processes, including electrically heated gloves that are lightweight, breathable, and sweat-resistant; surface-coated cotton, silk, and bast fiber threads capable of carrying large current densities and acting as sewable circuit interconnects; and surface-coated nylon threads woven together to form triboelectric textiles that can convert surface charge created during small body movements into usable and storable power.
Experimental investigations of quantum confined silicon nanoparticle light emitting devices
NASA Astrophysics Data System (ADS)
Ligman, Rebekah Kristine
2007-12-01
As the demands on our world's energy resources continue to grow, alternative high efficiency materials such as quantum confined silicon nanoparticles (Si nps) are desirable for their potential low cost application in white light illumination, in optical displays, and in on-chip optical interconnects. Many fabrication and passivation techniques exist that produce Si nps with high photogenerated quantum yield. However, high electrically generated Si np quantum efficiency has eluded our society. Predominantly due to the lack of a stable surface passivation and a device fabrication technique that preserves the Si np optical properties. To amend these deficiencies, the passivation of nonthermal plasma fabricated Si nps with a surface oxide grown under UV exposure was first investigated. Control over the surface oxidized Si np (Si/SiO2) passivation growth was demonstrated and the optical stability of Si/SiO2 nps was suitable for demonstrating Si np electroluminescence (EL). Two approaches for constructing hybrid organic light emitting diode (OLED) devices around nonthermal plasma fabricated Si nps were then investigated. Multilayer devices, composed of a nonthermal plasma fabricated Si np layer embedded within an OLED, were first studied. However, no EL from Si nps was obtained using the multilayer device architecture due to poor control over the Si np film thickness. Single layer polymer(Si/SiO2) hybrid devices, composed of nps randomly dispersed within an extrinsic conductive polymer, were then studied and EL from Si/SiO2 nps was obtained. The hybrid device optical and electrical response was enhanced over the control devices, possibly due to morphology changes induced by the Si/SiO2 nps. The energy transfer (ET) processes in single layer polymer(Si/SiO 2) hybrid devices were then investigated by imposing known spatial separations between the intrinsic conductive polymers and Si/SiO2 nps. No measurable Si/SiO2 np emission was observed from the intrinsic hybrid devices independent of the spatial separation, implying no ET occurs between the intrinsic polymers and Si/SiO2 nps. These results suggest the observed Si/SiO 2 np emission from extrinsic polymer(Si/SiO2) hybrid devices may be produced by direct carrier injection, Forster or Dexter ET mechanisms.
Transistors using crystalline silicon devices on glass
McCarthy, A.M.
1995-05-09
A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.
Biomedical microfluidic devices by using low-cost fabrication techniques: A review.
Faustino, Vera; Catarino, Susana O; Lima, Rui; Minas, Graça
2016-07-26
One of the most popular methods to fabricate biomedical microfluidic devices is by using a soft-lithography technique. However, the fabrication of the moulds to produce microfluidic devices, such as SU-8 moulds, usually requires a cleanroom environment that can be quite costly. Therefore, many efforts have been made to develop low-cost alternatives for the fabrication of microstructures, avoiding the use of cleanroom facilities. Recently, low-cost techniques without cleanroom facilities that feature aspect ratios more than 20, for fabricating those SU-8 moulds have been gaining popularity among biomedical research community. In those techniques, Ultraviolet (UV) exposure equipment, commonly used in the Printed Circuit Board (PCB) industry, replaces the more expensive and less available Mask Aligner that has been used in the last 15 years for SU-8 patterning. Alternatively, non-lithographic low-cost techniques, due to their ability for large-scale production, have increased the interest of the industrial and research community to develop simple, rapid and low-cost microfluidic structures. These alternative techniques include Print and Peel methods (PAP), laserjet, solid ink, cutting plotters or micromilling, that use equipment available in almost all laboratories and offices. An example is the xurography technique that uses a cutting plotter machine and adhesive vinyl films to generate the master moulds to fabricate microfluidic channels. In this review, we present a selection of the most recent lithographic and non-lithographic low-cost techniques to fabricate microfluidic structures, focused on the features and limitations of each technique. Only microfabrication methods that do not require the use of cleanrooms are considered. Additionally, potential applications of these microfluidic devices in biomedical engineering are presented with some illustrative examples. Copyright © 2015 Elsevier Ltd. All rights reserved.
MOEMS optical delay line for optical coherence tomography
NASA Astrophysics Data System (ADS)
Choudhary, Om P.; Chouksey, S.; Sen, P. K.; Sen, P.; Solanki, J.; Andrews, J. T.
2014-09-01
Micro-Opto-Electro-Mechanical optical coherence tomography, a lab-on-chip for biomedical applications is designed, studied, fabricated and characterized. To fabricate the device standard PolyMUMPS processes is adopted. We report the utilization of electro-optic modulator for a fast scanning optical delay line for time domain optical coherence tomography. Design optimization are performed using Tanner EDA while simulations are performed using COMSOL. The paper summarizes various results and fabrication methodology adopted. The success of the device promises a future hand-held or endoscopic optical coherence tomography for biomedical applications.
Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots
NASA Astrophysics Data System (ADS)
Paik, Young Hun
As the global concern for the financial and environmental costs of traditional energy resources increases, research on renewable energy, most notably solar energy, has taken center stage. Many alternative photovoltaic (PV) technologies for 'the next generation solar cell' have been extensively studied to overcome the Shockley-Queisser 31% efficiency limit as well as tackle the efficiency vs. cost issues. This dissertation focuses on the novel photovoltaic mechanism for the next generation solar cells using two inorganic nanomaterials, nanocrystal quantum dots and ferroelectric nanoparticles. Lead zirconate titanate (PZT) materials are widely studied and easy to synthesize using solution based chemistry. One of the fascinating properties of the PZT material is a Bulk Photovoltaic effect (BPVE). This property has been spotlighted because it can produce very high open circuit voltage regardless of the electrical bandgap of the materials. However, the poor optical absorption of the PZT materials and the required high temperature to form the ferroelectric crystalline structure have been obstacles to fabricate efficient photovoltaic devices. Colloidal quantum dots also have fascinating optical and electrical properties such as tailored absorption spectrum, capability of the bandgap engineering due to the wide range of material selection and quantum confinement, and very efficient carrier dynamics called multiple exciton generations. In order to utilize these properties, many researchers have put numerous efforts in colloidal quantum dot photovoltaic research and there has been remarkable progress in the past decade. However, several drawbacks are still remaining to achieve highly efficient photovoltaic device. Traps created on the large surface area, low carrier mobility, and lower open circuit voltage while increasing the absorption of the solar spectrum is main issues of the nanocrystal based photovoltaic effect. To address these issues and to take the advantages of the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.
Amorphous Silicon Based Neutron Detector
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xu, Liwei
2004-12-12
Various large-scale neutron sources already build or to be constructed, are important for materials research and life science research. For all these neutron sources, neutron detectors are very important aspect. However, there is a lack of a high-performance and low-cost neutron beam monitor that provides time and temporal resolution. The objective of this SBIR Phase I research, collaboratively performed by Midwest Optoelectronics, LLC (MWOE), the University of Toledo (UT) and Oak Ridge National Laboratory (ORNL), is to demonstrate the feasibility for amorphous silicon based neutron beam monitors that are pixilated, reliable, durable, fully packaged, and fabricated with high yield usingmore » low-cost method. During the Phase I effort, work as been focused in the following areas: 1) Deposition of high quality, low-defect-density, low-stress a-Si films using very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) at high deposition rate and with low device shunting; 2) Fabrication of Si/SiO2/metal/p/i/n/metal/n/i/p/metal/SiO2/ device for the detection of alpha particles which are daughter particles of neutrons through appropriate nuclear reactions; and 3) Testing of various devices fabricated for alpha and neutron detection; As the main results: · High quality, low-defect-density, low-stress a-Si films have been successfully deposited using VHF PECVD on various low-cost substrates; · Various single-junction and double junction detector devices have been fabricated; · The detector devices fabricated have been systematically tested and analyzed. · Some of the fabricated devices are found to successfully detect alpha particles. Further research is required to bring this Phase I work beyond the feasibility demonstration toward the final prototype devices. The success of this project will lead to a high-performance, low-cost, X-Y pixilated neutron beam monitor that could be used in all of the neutron facilities worldwide. In addition, the technologies developed here could be used to develop X-ray and neutron monitors that could be used in the future for security checks at the airports and other critical facilities. The project would lead to devices that could significantly enhance the performance of multi-billion dollar neutron source facilities in the US and bring our nation to the forefront of neutron beam sciences and technologies which have enormous impact to materials, life science and military research and applications.« less
Two-photon reduction: a cost-effective method for fabrication of functional metallic nanostructures
NASA Astrophysics Data System (ADS)
Tabrizi, Sahar; Cao, YaoYu; Lin, Han; Jia, BaoHua
2017-03-01
Metallic nanostructures have underpinned plasmonic-based advanced photonic devices in a broad range of research fields over the last decade including physics, engineering, material science and bioscience. The key to realizing functional plasmonic resonances that can manipulate light at the optical frequencies relies on the creation of conductive metallic structures at the nanoscale with low structural defects. Currently, most plasmonic nanostructures are fabricated either by electron beam lithography (EBL) or by focused ion beam (FIB) milling, which are expensive, complicated and time-consuming. In comparison, the direct laser writing (DLW) technique has demonstrated its high spatial resolution and cost-effectiveness in three-dimensional fabrication of micro/nanostructures. Furthermore, the recent breakthroughs in superresolution nanofabrication and parallel writing have significantly advanced the fabrication resolution and throughput of the DLW method and made it one of the promising future nanofabrication technologies with low-cost and scalability. In this review, we provide a comprehensive summary of the state-of-the-art DLW fabrication technology for nanometer scale metallic structures. The fabrication mechanisms, different material choices, fabrication capability, including resolution, conductivity and structure surface smoothness, as well as the characterization methods and achievable devices for different applications are presented. In particular, the development trends of the field and the perspectives for future opportunities and challenges are provided at the end of the review. It has been demonstrated that the quality of the metallic structures fabricated using the DLW method is excellent compared with other methods providing a new and enabling platform for functional nanophotonic device fabrication.
Electromagnetic micropores: fabrication and operation.
Basore, Joseph R; Lavrik, Nickolay V; Baker, Lane A
2010-12-21
We describe the fabrication and characterization of electromagnetic micropores. These devices consist of a micropore encompassed by a microelectromagnetic trap. Fabrication of the device involves multiple photolithographic steps, combined with deep reactive ion etching and subsequent insulation steps. When immersed in an electrolyte solution, application of a constant potential across the micropore results in an ionic current. Energizing the electromagnetic trap surrounding the micropore produces regions of high magnetic field gradients in the vicinity of the micropore that can direct motion of a ferrofluid onto or off of the micropore. This results in dynamic gating of the ion current through the micropore structure. In this report, we detail fabrication and characterize the electrical and ionic properties of the prepared electromagnetic micropores.
Additive manufacturing of lab-on-a-chip devices: promises and challenges
NASA Astrophysics Data System (ADS)
Zhu, Feng; Macdonald, Niall P.; Cooper, Jonathan M.; Wlodkowic, Donald
2013-12-01
This work describes a preliminary investigation of commercially available 3D printing technologies for rapid prototyping and low volume fabrication of Lab-on-a-Chip devices. The main motivation of the work was to use off-the-shelf 3D printing methods in order to rapidly and inexpensively build microfluidic devices with complex geometric features and reduce the need to use clear room environment and conventional microfabrication techniques. Both multi-jet modelling (MJM) and stereolithography (SLA) processes were explored. MJM printed devices were fabricated using a HD3500+ (3D Systems) high-definition printer using a thermo-polymer VisiJet Crystal (3D Systems) substratum that allows for a z-axis resolution of 16 μm and 25 μm x-y accuracy. SLA printed devices were produced using a Viper Pro (3D Systems) stereolithography system using Watershed 11122XC (DSM Somos) and Dreve Fototec 7150 Clear (Dreve Otoplastik GmbH) resins which allow for a z-axis resolution of 50 μm and 25 μm x-y accuracy. Fabrication results compared favourably with other forms of rapid prototyping such as laser cut PMMA devices and PDMS moulded microfluidic devices of the same design. Both processes allowed for fabrication of monolithic, optically transparent devices with features in the 100 μm range requiring minimal post-processing. Optical polymer qualities following different post-processing methods were also tested in both brightfield and fluorescence imaging of transgenic zebrafish embryos. Finally, we show that only ethanol-treated Dreve Fototec 7150 Clear resign proved to be non-toxic to human cell lines and fish embryos in fish toxicity assays (FET) requiring further investigation of 3D printing materials.
Johnson, Alicia S.; Anderson, Kari B.; Halpin, Stephen T.; Kirkpatrick, Douglas C.; Spence, Dana M.; Martin, R. Scott
2012-01-01
In Part I of a two-part series, we describe a simple, and inexpensive approach to fabricate polystyrene devices that is based upon melting polystyrene (from either a Petri dish or powder form) against PDMS molds or around electrode materials. The ability to incorporate microchannels in polystyrene and integrate the resulting device with standard laboratory equipment such as an optical plate reader for analyte readout and micropipettors for fluid propulsion is first described. A simple approach for sample and reagent delivery to the device channels using a standard, multi-channel micropipette and a PDMS-based injection block is detailed. Integration of the microfluidic device with these off-chip functions (sample delivery and readout) enables high throughput screens and analyses. An approach to fabricate polystyrene-based devices with embedded electrodes is also demonstrated, thereby enabling the integration of microchip electrophoresis with electrochemical detection through the use of a palladium electrode (for a decoupler) and carbon-fiber bundle (for detection). The device was sealed against a PDMS-based microchannel and used for the electrophoretic separation and amperometric detection of dopamine, epinephrine, catechol, and 3,4-dihydroxyphenylacetic acid. Finally, these devices were compared against PDMS-based microchips in terms of their optical transparency and absorption of an anti-platelet drug, clopidogrel. Part I of this series lays the foundation for Part II, where these devices were utilized for various on-chip cellular analysis. PMID:23120747
Fabrication of Superconducting Detectors for Studying the Universe
NASA Technical Reports Server (NTRS)
Brown, Ari-David
2012-01-01
Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.
Tungsten bridge for the low energy ignition of explosive and energetic materials
Benson, D.A.; Bickes, R.W. Jr.; Blewer, R.S.
1990-12-11
A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose. 2 figs.
75 FR 30794 - Notice of Intent To Grant Exclusive Patent License; AmberWave Systems Corporation
Federal Register 2010, 2011, 2012, 2013, 2014
2010-06-02
..., power transistor devices, and power devices in the United States, the Government-owned inventions... amplifiers, radio frequency power transistor devices, and power devices and their use for the fabrication of...
Kim, Tae-Wook; Choi, Hyejung; Oh, Seung-Hwan; Jo, Minseok; Wang, Gunuk; Cho, Byungjin; Kim, Dong-Yu; Hwang, Hyunsang; Lee, Takhee
2009-01-14
The resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 x 40 microm(2) to 200 x 200 nm(2). From the scaling of junction size, the memory mechanism can be attributed to the space-charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (I(ON)/I(OFF) approximately 10(4)), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10,000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.
Code of Federal Regulations, 2012 CFR
2012-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection..., fabric filter, electrostatic precipitator, activated carbon injection, or afterburner, or if I limit... device other than a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection...
Code of Federal Regulations, 2014 CFR
2014-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection..., fabric filter, electrostatic precipitator, activated carbon injection, or afterburner, or if I limit... device other than a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection...
Code of Federal Regulations, 2013 CFR
2013-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection..., fabric filter, electrostatic precipitator, activated carbon injection, or afterburner, or if I limit... device other than a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection...
Code of Federal Regulations, 2011 CFR
2011-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection..., fabric filter, electrostatic precipitator, activated carbon injection, or afterburner, or if I limit... device other than a wet scrubber, fabric filter, electrostatic precipitator, activated carbon injection...
A comparative study of graphene and graphite-based field effect transistor on flexible substrate
NASA Astrophysics Data System (ADS)
Bhatt, Kapil; Rani, Cheenu; Vaid, Monika; Kapoor, Ankit; Kumar, Pramod; Kumar, Sandeep; Shriwastawa, Shilpi; Sharma, Sandeep; Singh, Randhir; Tripathi, C. C.
2018-06-01
In the present era, there has been a great demand of cost-effective, biodegradable, flexible and wearable electronics which may open the gate to many applications like flexible displays, RFID tags, health monitoring devices, etc. Due to the versatile nature of plastic substrates, they have been extensively used in packaging, printing, etc. However, the fabrication of electronic devices requires specially prepared substrates with high quality surfaces, chemical compositions and solutions to the related fabrication issues along with its non-biodegradable nature. Therefore, in this report, a cost-effective, biodegradable cellulose paper as an alternative dielectric substrate material for the fabrication of flexible field effect transistor (FET) is presented. The graphite and liquid phase exfoliated graphene have been used as the material for the realisation of source, drain and channel on cellulose paper substrate for its comparative analysis. The mobility of fabricated FETs was calculated to be 83 cm2/V s (holes) and 33 cm2/V s (electrons) for graphite FET and 100 cm2/V s (holes) and 52 cm2/V s (electrons) for graphene FET, respectively. The output characteristic of the device demonstrates the linear behaviour and a comprehensive increase in conductance as a function of gate voltages. The fabricated FETs may be used for strain sensing, health care monitoring devices, human motion detection, etc.
NASA Astrophysics Data System (ADS)
Bracamontes Rodríguez, Y. E.; Beltrán Pérez, G.; Castillo Mixcóatl, J.; Muñoz Aguirre, S.
2011-09-01
Fiber Bragg gratings (FBG) are important optical devices since they have been quite successful not only in the field of communications but also in sensor systems and optical fiber lasers. In the sensors area they are generally used as detection elements for different physical parameters such as temperature, strain, flow, etc. In the electronics and optoelectronics laboratory at Benemérita Universidad Autónoma de Puebla (LEyO-BUAP), there are already experimental setups of sensors as well as laser systems, where FBGs are fundamental elements for their adequate performance. However, these FBGs are commercial devices and they present limited characteristics in their transmission profiles, bandwidth and reflectivity. On the other hand, in some occasions, the delivery time from the fabricant to the customer is quite long. Therefore, it is important for LEyO to implement a system to fabricate this kind of devices, which would mean LEyO independence in the technological development. In this work, results of FBGs fabrication based on the phase mask technique are presented. Such mask is optimized for UV and it has a period of 1060 nm. A Nd:YAG pulsed laser with a 5 ns pulse length and an energy of 40 mJ was used as the UV source employing the 4th harmonic generation to obtain a 266 nm wavelength. Ge-doped fiber was used to fabricate the devices.
Two Photon Polymerization of Microneedles for Transdermal Drug Delivery
Gittard, Shaun D.; Ovsianikov, Aleksandr; Chichkov, Boris N.; Doraiswamy, Anand; Narayan, Roger J.
2010-01-01
Importance of the field Microneedles are small-scale devices that are finding use for transdermal delivery of protein-based pharmacologic agents and nucleic acid-based pharmacologic agents; however, microneedles prepared using conventional microelectronics-based technologies have several shortcomings, which have limited translation of these devices into widespread clinical use. Areas covered in this review Two photon polymerization is a laser-based rapid prototyping technique that has been recently used for direct fabrication of hollow microneedles with a wide variety of geometries. In addition, an indirect rapid prototyping method that involves two photon polymerization and polydimethyl siloxane micromolding has been used for fabrication of solid microneedles with exceptional mechanical properties. What the reader will gain In this review, the use of two photon polymerization for fabricating in-plane and out-of-plane hollow microneedle arrays is described. The use of two photon polymerization-micromolding for fabrication of solid microneedles is also reviewed. In addition, fabrication of microneedles with antimicrobial properties is discussed; antimicrobial microneedles may reduce the risk of infection associated with formation of channels through the stratum corneum. Take home message It is anticipated that the use of two photon polymerization as well as two photon polymerization-micromolding for fabrication of microneedles and other microstructured drug delivery devices will increase over the coming years. PMID:20205601
Stretchable Loudspeaker using Liquid Metal Microchannel
Jin, Sang Woo; Park, Jeongwon; Hong, Soo Yeong; Park, Heun; Jeong, Yu Ra; Park, Junhong; Lee, Sang-Soo; Ha, Jeong Sook
2015-01-01
Considering the various applications of wearable and bio-implantable devices, it is desirable to realize stretchable acoustic devices for body-attached applications such as sensing biological signals, hearing aids, and notification of information via sound. In this study, we demonstrate the facile fabrication of a Stretchable Acoustic Device (SAD) using liquid metal coil of Galinstan where the SAD is operated by the electromagnetic interaction between the liquid metal coil and a Neodymium (Nd) magnet. To fabricate a liquid metal coil, Galinstan was injected into a micro-patterned elastomer channel. This fabricated SAD was operated simultaneously as a loudspeaker and a microphone. Measurements of the frequency response confirmed that the SAD was mechanically stable under both 50% uniaxial and 30% biaxial strains. Furthermore, 2000 repetitive applications of a 50% uniaxial strain did not induce any noticeable degradation of the sound pressure. Both voice and the beeping sound of an alarm clock were successfully recorded and played back through our SAD while it was attached to the wrist under repeated deformation. These results demonstrate the high potential of the fabricated SAD using Galinstan voice coil in various research fields including stretchable, wearable, and bio-implantable acoustic devices. PMID:26181209
Development of advanced micromirror arrays by flip-chip assembly
NASA Astrophysics Data System (ADS)
Michalicek, M. Adrian; Bright, Victor M.
2001-10-01
This paper presents the design, commercial prefabrication, modeling and testing of advanced micromirror arrays fabricated using a novel, simple and inexpensive flip-chip assembly technique. Several polar piston arrays and rectangular cantilever arrays were fabricated using flip-chip assembly by which the upper layers of the array are fabricated on a separate chip and then transferred to a receiving module containing the lower layers. Typical polar piston arrays boast 98.3% active surface area, highly planarized surfaces, low address potentials compatible with CMOS electronics, highly standardized actuation between devices, and complex segmentation of mirror surfaces which allows for custom aberration configurations. Typical cantilever arrays boast large angles of rotation as well as an average surface planarity of only 1.779 nm of RMS roughness across 100 +m mirrors. Continuous torsion devices offer stable operation through as much as six degrees of rotation while binary operation devices offer stable activated positions with as much as 20 degrees of rotation. All arrays have desirable features of costly fabrication services like five structural layers and planarized mirror surfaces, but are prefabricated in the less costly MUMPs process. Models are developed for all devices and used to compare empirical data.
Two-photon polymerization for fabrication of biomedical devices
NASA Astrophysics Data System (ADS)
Ovsianikov, Aleksandr; Doraiswamy, Anand; Narayan, R.; Chichkov, B. N.
2007-01-01
Two-photon polymerization (2PP) is a novel technology which allows the fabrication of complex three-dimensional (3D) microstructures and nanostructures. The number of applications of this technology is rapidly increasing; it includes the fabrication of 3D photonic crystals [1-4], medical devices, and tissue scaffolds [5-6]. In this contribution, we discuss current applications of 2PP for microstructuring of biomedical devices used in drug delivery. While in general this sector is still dominated by oral administration of drugs, precise dosing, safety, and convenience are being addressed by transdermal drug delivery systems. Currently, main limitations arise from low permeability of the skin. As a result, only few types of pharmacological substances can be delivered in this manner [7]. Application of microneedle arrays, whose function is to help overcome the barrier presented by the epidermis layer of the skin, provides a very promising solution. Using 2PP we have fabricated arrays of hollow microneedles with different geometries. The effect of microneedle geometry on skin penetration is examined. Our results indicate that microneedles created using 2PP technique are suitable for in vivo use, and for integration with the next generation of MEMS- and NEMS-based drug delivery devices.
Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol
2017-07-25
Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.
Stretchable Loudspeaker using Liquid Metal Microchannel
NASA Astrophysics Data System (ADS)
Jin, Sang Woo; Park, Jeongwon; Hong, Soo Yeong; Park, Heun; Jeong, Yu Ra; Park, Junhong; Lee, Sang-Soo; Ha, Jeong Sook
2015-07-01
Considering the various applications of wearable and bio-implantable devices, it is desirable to realize stretchable acoustic devices for body-attached applications such as sensing biological signals, hearing aids, and notification of information via sound. In this study, we demonstrate the facile fabrication of a Stretchable Acoustic Device (SAD) using liquid metal coil of Galinstan where the SAD is operated by the electromagnetic interaction between the liquid metal coil and a Neodymium (Nd) magnet. To fabricate a liquid metal coil, Galinstan was injected into a micro-patterned elastomer channel. This fabricated SAD was operated simultaneously as a loudspeaker and a microphone. Measurements of the frequency response confirmed that the SAD was mechanically stable under both 50% uniaxial and 30% biaxial strains. Furthermore, 2000 repetitive applications of a 50% uniaxial strain did not induce any noticeable degradation of the sound pressure. Both voice and the beeping sound of an alarm clock were successfully recorded and played back through our SAD while it was attached to the wrist under repeated deformation. These results demonstrate the high potential of the fabricated SAD using Galinstan voice coil in various research fields including stretchable, wearable, and bio-implantable acoustic devices.
Rapid and inexpensive fabrication of polymeric microfluidic devices via toner transfer masking
Easley, Christopher J.; Benninger, Richard K. P.; Shaver, Jesse H.; Head, W. Steven; Piston, David W.
2009-01-01
Summary An alternative fabrication method is presented for production of masters for single- or multilayer polymeric microfluidic devices in a standard laboratory environment, precluding the need for a cleanroom. This toner transfer masking (TTM) method utilizes an office laser printer to generate a toner pattern which is thermally transferred to a metal master to serve as a mask for etching. With master fabrication times as little as one hour (depending on channel depth) using commercially-available equipment and supplies, this approach should make microfluidic technology more widely accessible to the non-expert—even the non-scientist. The cost of fabrication consumables was estimated to be < $1 per master, over an order of magnitude decrease in consumable costs compared to standard photolithography. In addition, the use of chemical etching allows accurate control over the height of raised features (i.e., channel depths), allowing the flexibility to fabricate multiple depths on a single master with little added time. Resultant devices are shown capable of pneumatic valving, three-dimensional channel formation (using layer-connecting vias), droplet fluidics, and cell imaging and staining. The multiple-depth capabilities of the method are proven useful for cellular analysis by fabrication of handheld, disposable devices used for trapping and imaging of live murine pancreatic islets. The precise fluidic control provided by the microfluidic platform allows subsequent fixing and staining of these cells without significant movement, thus spatial correlation of imaging and staining is attainable—even with rare alpha cells that constitute only ∼10% of the islet cells. PMID:19350094
DOE Office of Scientific and Technical Information (OSTI.GOV)
Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason
High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperaturemore » compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.« less
Doménech, José David; Muñoz, Pascual; Capmany, José
2009-11-09
In this paper, a novel technique to set the coupling constant between cells of a coupled resonator optical waveguide (CROW) device, in order to tailor the filter response, is presented. The technique is demonstrated by simulation assuming a racetrack ring resonator geometry. It consists on changing the effective length of the coupling section by applying a longitudinal offset between the resonators. On the contrary, the conventional techniques are based in the transversal change of the distance between the ring resonators, in steps that are commonly below the current fabrication resolution step (nm scale), leading to strong restrictions in the designs. The proposed longitudinal offset technique allows a more precise control of the coupling and presents an increased robustness against the fabrication limitations, since the needed resolution step is two orders of magnitude higher. Both techniques are compared in terms of the transmission esponse of CROW devices, under finite fabrication resolution steps.
Silicon carbide semiconductor device fabrication and characterization
NASA Technical Reports Server (NTRS)
Davis, R. F.; Das, K.
1990-01-01
A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.
Influence of vacuum chamber impurities on the lifetime of organic light-emitting diodes
Fujimoto, Hiroshi; Suekane, Takashi; Imanishi, Katsuya; Yukiwaki, Satoshi; Wei, Hong; Nagayoshi, Kaori; Yahiro, Masayuki; Adachi, Chihaya
2016-01-01
We evaluated the influence of impurities in the vacuum chamber used for the fabrication of organic light-emitting diodes on the lifetime of the fabricated devices and found a correlation between lifetime and the device fabrication time. The contact angle of the ITO substrates stored the chamber under vacuum were used to evaluate chamber cleanliness. Liquid chromatography-mass spectrometry was performed on Si wafers stored in the vacuum chamber before device fabrication to examine the impurities in the chamber. Surprisingly, despite the chamber and evaporation sources being at room temperature, a variety of materials were detected, including previously deposited materials and plasticizers from the vacuum chamber components. We show that the impurities, and not differences in water content, in the chamber were the source of lifetime variations even when the duration of exposure to impurities only varied before and after deposition of the emitter layer. These results suggest that the impurities floating in the vacuum chamber significantly impact lifetime values and reproducibility. PMID:27958304
Frisenda, Riccardo; Navarro-Moratalla, Efrén; Gant, Patricia; Pérez De Lara, David; Jarillo-Herrero, Pablo; Gorbachev, Roman V; Castellanos-Gomez, Andres
2018-01-02
Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature, and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle.
A three-dimensional optical photonic crystal with designed point defects
NASA Astrophysics Data System (ADS)
Qi, Minghao; Lidorikis, Elefterios; Rakich, Peter T.; Johnson, Steven G.; Joannopoulos, J. D.; Ippen, Erich P.; Smith, Henry I.
2004-06-01
Photonic crystals offer unprecedented opportunities for miniaturization and integration of optical devices. They also exhibit a variety of new physical phenomena, including suppression or enhancement of spontaneous emission, low-threshold lasing, and quantum information processing. Various techniques for the fabrication of three-dimensional (3D) photonic crystals-such as silicon micromachining, wafer fusion bonding, holographic lithography, self-assembly, angled-etching, micromanipulation, glancing-angle deposition and auto-cloning-have been proposed and demonstrated with different levels of success. However, a critical step towards the fabrication of functional 3D devices, that is, the incorporation of microcavities or waveguides in a controllable way, has not been achieved at optical wavelengths. Here we present the fabrication of 3D photonic crystals that are particularly suited for optical device integration using a lithographic layer-by-layer approach. Point-defect microcavities are introduced during the fabrication process and optical measurements show they have resonant signatures around telecommunications wavelengths (1.3-1.5µm). Measurements of reflectance and transmittance at near-infrared are in good agreement with numerical simulations.
Review article: Fabrication of nanofluidic devices
Duan, Chuanhua; Wang, Wei; Xie, Quan
2013-01-01
Thanks to its unique features at the nanoscale, nanofluidics, the study and application of fluid flow in nanochannels/nanopores with at least one characteristic size smaller than 100 nm, has enabled the occurrence of many interesting transport phenomena and has shown great potential in both bio- and energy-related fields. The unprecedented growth of this research field is apparently attributed to the rapid development of micro/nanofabrication techniques. In this review, we summarize recent activities and achievements of nanofabrication for nanofluidic devices, especially those reported in the past four years. Three major nanofabrication strategies, including nanolithography, microelectromechanical system based techniques, and methods using various nanomaterials, are introduced with specific fabrication approaches. Other unconventional fabrication attempts which utilize special polymer properties, various microfabrication failure mechanisms, and macro/microscale machining techniques are also presented. Based on these fabrication techniques, an inclusive guideline for materials and processes selection in the preparation of nanofluidic devices is provided. Finally, technical challenges along with possible opportunities in the present nanofabrication for nanofluidic study are discussed. PMID:23573176
Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching.
Chen, Yun; Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; Wong, Ching-Ping
2017-02-08
Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.
Influence of vacuum chamber impurities on the lifetime of organic light-emitting diodes
NASA Astrophysics Data System (ADS)
Fujimoto, Hiroshi; Suekane, Takashi; Imanishi, Katsuya; Yukiwaki, Satoshi; Wei, Hong; Nagayoshi, Kaori; Yahiro, Masayuki; Adachi, Chihaya
2016-12-01
We evaluated the influence of impurities in the vacuum chamber used for the fabrication of organic light-emitting diodes on the lifetime of the fabricated devices and found a correlation between lifetime and the device fabrication time. The contact angle of the ITO substrates stored the chamber under vacuum were used to evaluate chamber cleanliness. Liquid chromatography-mass spectrometry was performed on Si wafers stored in the vacuum chamber before device fabrication to examine the impurities in the chamber. Surprisingly, despite the chamber and evaporation sources being at room temperature, a variety of materials were detected, including previously deposited materials and plasticizers from the vacuum chamber components. We show that the impurities, and not differences in water content, in the chamber were the source of lifetime variations even when the duration of exposure to impurities only varied before and after deposition of the emitter layer. These results suggest that the impurities floating in the vacuum chamber significantly impact lifetime values and reproducibility.
Graphene electrodes for lithium-niobate electro-optic devices.
Chang, Zeshan; Jin, Wei; Chiang, Kin Seng
2018-04-15
We propose and demonstrate the use of graphene electrodes for lithium-niobate electro-optic (EO) devices to exempt the need of incorporating a buffer layer between the waveguide and the electrodes. Using graphene electrodes, our experimental mode converter, based on an EO-generated long-period grating in a LiNbO 3 waveguide, shows a reduction in the half-π voltage by almost three times, compared with the conventional electrode design using metal. With the buffer layer exempted, the device fabrication process is also significantly simplified. The use of graphene electrodes is an effective approach to enhancing the efficiency of EO devices and, at the same time, reducing their fabrication cost.
Passive athermalization of multimode interference devices for wavelength-locking applications.
Ruiz-Perez, Victor I; May-Arrioja, Daniel A; Guzman-Sepulveda, Jose R
2017-03-06
In this paper we demonstrate the passive, material-based athermalization of all-fiber architectures by cascading multimode interference (MMI) devices. In-line thermal compensation is achieved by including a liquid-core multimode section of variable length that allows ensuring temperature-independent operation while preserving the inherent filter-like spectral response of the MMI devices. The design of the temperature compensation unit is straightforward and its fabrication is simple. The applicability of our approach is experimentally verified by fabricating a wavelength-locked MMI laser with sensitivity of only -0.1 pm/°C, which is at least one order of magnitude lower than that achieved with other fiber optics devices.
Boron selenide semiconductor detectors for thermal neutron counting
NASA Astrophysics Data System (ADS)
Kargar, Alireza; Tower, Joshua; Cirignano, Leonard; Shah, Kanai
2013-09-01
Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung
2016-01-01
Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543
Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung
2016-05-12
Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.
NASA Astrophysics Data System (ADS)
Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung
2016-05-01
Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.
NASA Astrophysics Data System (ADS)
Kotsifaki, Domna G.; Mackenzie, Mark D.; Polydefki, Georgia; Kar, Ajoy K.; Makropoulou, Mersini; Serafetinides, Alexandros A.
2017-12-01
Microfluidic devices provide a platform with wide ranging applications from environmental monitoring to disease diagnosis. They offer substantive advantages but are often not optimized or designed to be used by nonexpert researchers. Microchannels of a microanalysis platform and their geometrical characterization are of eminent importance when designing such devices. We present a method that is used to optimize each microchannel within a device using high-throughput particle manipulation. For this purpose, glass-based microfluidic devices, with three-dimensional channel networks of several geometrical sizes, were fabricated by employing laser fabrication techniques. The effect of channel geometry was investigated by employing an optical tweezer. The optical trapping force depends on the flow velocity that is associated with the dimensions of the microchannel. We observe a linear dependence of the trapping efficiency and of the fluid flow velocity, with the channel dimensions. We determined that the highest trapping efficiency was achieved for microchannels with aspect ratio equal to one. Numerical simulation validated the impact of the device design dimensions on the trapping efficiency. This investigation indicates that the geometrical characteristics, the flow velocity, and trapping efficiency are crucial and should be considered when fabricating microfluidic devices for cell studies.
Micro-opto-mechanical devices and systems using epitaxial lift off
NASA Technical Reports Server (NTRS)
Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.
1993-01-01
The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.
Li, Chunmei; Hotz, Blake; Ling, Shengjie; Guo, Jin; Haas, Dylan S; Marelli, Benedetto; Omenetto, Fiorenzo; Lin, Samuel J; Kaplan, David L
2016-12-01
Silk fibers spun by silkworms and spiders exhibit exceptional mechanical properties with a unique combination of strength, extensibility and toughness. In contrast, the mechanical properties of regenerated silk materials can be tuned through control of the fabrication process. Here we introduce a biomimetic, all-aqueous process, to obtain bulk regenerated silk-based materials for the fabrication of functionalized orthopedic devices. The silk materials generated in the process replicate the nano-scale structure of natural silk fibers and possess excellent mechanical properties. The biomimetic materials demonstrate excellent machinability, providing a path towards the fabrication of a new family of resorbable orthopedic devices where organic solvents are avoided, thus allowing functionalization with bioactive molecules to promote bone remodeling and integration. Copyright © 2016 Elsevier Ltd. All rights reserved.
Kim, Jeong Won; Jeon, Hwan-Jin; Lee, Chang-Lyoul; Ahn, Chi Won
2017-03-02
Well-aligned, high-resolution (10 nm), three-dimensional (3D) hybrid nanostructures consisting of patterned cylinders and Au islands were fabricated on ITO substrates using an ion bombardment process and a tilted deposition process. The fabricated 3D hybrid nanostructure-embedded ITO maintained its excellent electrical and optical properties after applying a surface-structuring process. The solution processable organic photovoltaic device (SP-OPV) employing a 3D hybrid nanostructure-embedded ITO as the anode displayed a 10% enhancement in the photovoltaic performance compared to the photovoltaic device prepared using a flat ITO electrode, due to the improved charge collection (extraction and transport) efficiency as well as light absorbance by the photo-active layer.
3D-PRINTING OF TRANSPARENT BIO-MICROFLUIDIC DEVICES IN PEG-DA
Urrios, Arturo; Parra-Cabrera, Cesar; Bhattacharjee, Nirveek; Gonzalez-Suarez, Alan M.; Rigat-Brugarolas, Luis G.; Nallapatti, Umashree; Samitier, Josep; DeForest, Cole A.; Posas, Francesc; Garcia-Cordero, José L.; Folch, Albert
2016-01-01
The vast majority of microfluidic systems are molded in poly(dimethylsiloxane) (PDMS) by soft lithography due to the favorable properties of PDMS: biocompatible, elastomeric, transparent, gas-permeable, inexpensive, and copyright-free. However, PDMS molding involves tedious manual labor, which makes PDMS devices prone to assembly failures and difficult to disseminate to research and clinical settings. Furthermore, the fabrication procedures limit the 3D complexity of the devices to layered designs. Stereolithography (SL), a form of 3D-printing, has recently attracted attention as a way to customize the fabrication of biomedical devices due to its automated, assembly-free 3D fabrication, rapidly decreasing costs, and fast-improving resolution and throughput. However, existing SL resins are not biocompatible and patterning transparent resins at high resolution remains difficult. Here we report procedures for the preparation and patterning of a transparent resin based on low-MW poly(ethylene glycol) diacrylate (MW 250) (PEG-DA-250). The 3D-printed devices are highly transparent and cells can be cultured on PEG-DA-250 prints for several days. This biocompatible SL resin and printing process solves some of the main drawbacks of 3D-printed microfluidic devices: biocompatibility and transparency. In addition, it should also enable the production of non-microfluidic biomedical devices. PMID:27217203
Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping
2017-01-01
The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. PMID:28150807
Thermoplastic microfluidic devices and their applications in protein and DNA analysis
Liu, Ke; Fan, Z. Hugh
2013-01-01
Microfluidics is a platform technology that has been used for genomics, proteomics, chemical synthesis, environment monitoring, cellular studies, and other applications. The fabrication materials of microfluidic devices have traditionally included silicon and glass, but plastics have gained increasing attention in the past few years. We focus this review on thermoplastic microfluidic devices and their applications in protein and DNA analysis. We outline the device design and fabrication methods, followed by discussion on the strategies of surface treatment. We then concentrate on several significant advancements in applying thermoplastic microfluidic devices to protein separation, immunoassays, and DNA analysis. Comparison among numerous efforts, as well as the discussion on the challenges and innovation associated with detection, is presented. PMID:21274478
Tuning the resistive switching properties of TiO2-x films
NASA Astrophysics Data System (ADS)
Ghenzi, N.; Rozenberg, M. J.; Llopis, R.; Levy, P.; Hueso, L. E.; Stoliar, P.
2015-03-01
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi
2015-12-03
This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.
Design and development of wafer-level near-infrared micro-camera
NASA Astrophysics Data System (ADS)
Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Dhar, Nibir K.; Lewis, Jay S.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.
2015-08-01
SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can offer high bandwidths and responsivities. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated SiGe based PIN detector devices on 300 mm diameter Si wafers in order to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. An n+-Ge layer formed by ion implantation of phosphorus, passivating oxide cap, and then top copper contacts complete the PIN photodetector design. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxial growth and fabricated detector devices. In addition, electrical characterization was performed to compare the I-V dark current vs. photocurrent response as well as the time and wavelength varying photoresponse properties of the fabricated devices, results of which are likewise presented.
NASA Astrophysics Data System (ADS)
Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.
2017-03-01
This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.
Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures
NASA Astrophysics Data System (ADS)
Sapkota, Keshab R.
Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical transport properties since such systems are halfmetallic in nature and promise the possibilities of spin injection and detection. The study was extended to dilute magnetic semiconducting nanowire system of Cd1-xMnxTe which possess both magnetic and semiconducting properties. In summary, the studies made in this thesis will offer a new understanding of spin transport behavior for future technology.
Multijunction photovoltaic device and fabrication method
Arya, Rajeewa R.; Catalano, Anthony W.
1993-09-21
A multijunction photovoltaic device includes first and second amorphous silicon PIN photovoltaic cells in a stacked arrangement. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one or the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers. The disclosed device is fabricated by a glow discharge process.
Optical fiber end-facet polymer suspended-mirror devices
NASA Astrophysics Data System (ADS)
Yao, Mian; Wu, Jushuai; Zhang, A. Ping; Tam, Hwa-Yaw; Wai, P. K. A.
2017-04-01
This paper presents a novel optical fiber device based on a polymer suspended mirror on the end facet of an optical fiber. With an own-developed optical 3D micro-printing technology, SU-8 suspended-mirror devices (SMDs) were successfully fabricated on the top of a standard single-mode optical fiber. Optical reflection spectra of the fabricated SU- 8 SMDs were measured and compared with theoretical analysis. The proposed technology paves a way towards 3D microengineering of the small end-facet of optical fibers to develop novel fiber-optic sensors.
Integrated seal for high-temperature electrochemical device
Tucker, Michael C; Jacobson, Craig P
2013-07-16
The present invention provides electrochemical device structures having integrated seals, and methods of fabricating them. According to various embodiments the structures include a thin, supported electrolyte film with the electrolyte sealed to the support. The perimeter of the support is self-sealed during fabrication. The perimeter can then be independently sealed to a manifold or other device, e.g., via an external seal. According to various embodiments, the external seal does not contact the electrolyte, thereby eliminating the restrictions on the sealing method and materials imposed by sealing against the electrolyte.
Growth and characterization of zinc oxide and PZT films for micromachined acoustic wave devices
NASA Astrophysics Data System (ADS)
Yoon, Sang Hoon
The ability to detect the presence of low concentrations of harmful substances, such as biomolecular agents, warfare agents, and pathogen cells, in our environment and food chain would greatly advance our safety, provide more sensitive tools for medical diagnostics, and protect against terrorism. Acoustic wave (AW) devices have been widely studied for such applications due to several attractive properties, such as rapid response, reliability, portability, ease of use, and low cost. The principle of these sensors is based on a fundamental feature of the acoustic wave that is generated and detected by a piezoelectric material. The performance of the device, therefore, greatly depends on the properties of piezoelectric thin film. The required properties include a high piezoelectric coefficient and high electromechanical coefficients. The surface roughness and the mechanical properties, such as Young's modulus and hardness, are also factors that can affect the wave propagation of the device. Since the film properties are influenced by the structure of the material, understanding thin film structure is very important for the design of high-performance piezoelectric MEMS devices for biosensor applications. In this research, two piezoelectric thin film materials were fabricated and investigated. ZnO films were fabricated by CSD (Chemical Solution Deposition) and sputtering, and PZT films were fabricated by CSD only. The process parameters for solution derived ZnO and PZT films, such as the substrate type, the effect of the chelating agent, and heat treatment, were studied to find the relationship between process parameters and thin film structure. In the case of the sputtered ZnO films, the process gas types and their ratio, heat treatment in situ, and post deposition were investigated. The key results of systematic experiments show that the combined influence of chemical modifiers and substrates in chemical solution deposition have an effect on the crystallographic orientation of the films, which is explained by the phase transformation that occurs from amorphous pyrolized film to crystalline film. Sputtered ZnO films do not show a strong dependence on the parameters, possibly indicating a reduced energy barrier for the growth of ZnO film due to plasma energy. Based on an understanding of the relationship between process and thin film structure, the growth mechanism of CSD ZnO is proposed. The devices are fabricated on 4-inch silicon wafers by a microelectronic fabrication method. The fabrication procedure and issues relating to device fabrication are discussed.
Fabrication of 8×8 MMI optical coupler in BK7 by ion-exchange
NASA Astrophysics Data System (ADS)
Li, Xia; Li, Xi-Hua; Zhou, Qiang; Jiang, Xiao-Qing; Yang, Jian-Yi; Wang, Ming-Hua
2005-01-01
The planar waveguide optical couplers are of prime importance in optical communication and optical signal processing system. Comparing with the optical fiber coupler (OFC) which fabricated by fused biconical taper technology, the planar waveguide couplers are more compact size, lower loss, better uniformity, easier manufacture and integration. Multimode interference (MMI) couplers have many advantages, such as compact size, wavelength and polarization insensitivity, fabrication tolerances and low loss, etc., which concentrate more and more attention. Conventional MMI devices are based on the uniform index waveguides. When the number of input/output waveguides becomes larger, the intrinsic propagation constant error, which will cause bad uniformity of output power, can"t be neglected. In fact, most waveguide devices are graded-index. With the enhanced compatibility of MMI coupler, the performance can be improved at the same time. Prior study shows that graded-index MMI couplers reach the best performance under certain index contrast. Among many available materials, glass is chosen to be the substrate of the coupler, because of its good features, such as low loss, ease fabrication, cheap cost, and so on. In this paper, an 8×8 MMI optical coupler is designed based on the principle of graded-index MMI. The coupler is composed of a waveguide, which is designed to support a large number of modes, and several access (usually single-mode) waveguides, which are used to launch light into and recover light from that multimode waveguide. The total length of the device is less than 3.5 centimeter, including S-bends which lead the multiple images to the output of the device with the spacing D=250μm to make the device fiber compatible. In this paper, we describe an experimental realization of the 8×8 graded-index MMI optical coupler and the measurement of its performance with the testing laser of the wavelength of 1.55μm. The device is fabricated by ion-exchange on BK7 glass substrate. During the ion-exchange process, a melting mixture of AgNO3 : (KNO3 : NaNO3) (molar ratio, 0.001:1) is used at 350~380°C for different times (range from 8 to 18 hours) to fabricate the coupler. The experimental results show that the performance of the optical coupler is quite promising. For instance, while launching light from No.5 waveguide, the uniformity of the device is approximately 0.72dB. Optimization of design and fabrication is going on to improve the total performance of the optical coupler.
Quantum well infrared photodetectors (QWIP) with selectively regrown N-GaAs plugs
NASA Astrophysics Data System (ADS)
Matsukura, Yusuke; Nishino, Hironori; Tanaka, Hitoshi; Fujii, Toshio
2001-10-01
We fabricated the GaAs/AlGaAs Quantum Well Infrared Photo detector (QWIP) focal plane array with selectively re-grown N- GaAs interconnection plugs and demonstrated its device operation, in order to establish the technology to obtain both complex device functions and device manufacturability. MBE (Molecular Beam Epitaxy) grown QWIP MQW wafers were covered with SiON and SiNx mask films to obtain selectivity of the re-growth process. N-GaAs plugs were re-grown selectively with low-pressure MOCVD (Metal-Organic Chemical Vapor Deposition) with AsH3 and Dimethylgalliumchloride as precursors, only on the bottom surfaces of the holes for the interconnection to extract the electrodes from the underlying epilayer. Cross- sectional SEM observation revealed that the feature of the re- grown N-GaAs plugs was triangular, rather than rectangular as expected. The reason for this discrepancy is not yet clear. The electrical contact between the epilayer and re-grown N- GaAs plug was 'ohmic-like,' without any trace of interfacial barrier. The Current-Voltage characteristics of the fabricated QWIP device showed no tangible leakage current between the N- GaAs plug and device structure, indicating that electrical insulation between the N-GaAs plugs and device structure was sufficient. Fabricated devices were successfully operated as a hybrid focal plane array, indicating the selective re-growth was a promising technique to realize complex QWIP based devices.
NASA Astrophysics Data System (ADS)
Richardson, Beau J.; Zhu, Leize; Yu, Qiuming
2017-04-01
Indium tin oxide (ITO) is the most common transparent electrode used in organic photovoltaics (OPVs), yet limited indium reserves and poor mechanical properties make it non-ideal for large-scale OPV production. To replace ITO, we designed, fabricated, and deployed plasmonic nanostructured electrodes in inverted OPV devices. We found that active layer absorption is significantly impacted by ZnO thickness which affects the optical field distribution inside the resonant cavity formed between the plasmonic nanostructured electrode and top electrode. High quality Cr/Au nanostructured electrodes were fabricated by nanoimprint lithography and deployed in ITO-free inverted devices on glass. Devices with thinner ZnO showed a PCE as high as 5.70% and higher J SC’s than devices on thicker ZnO, in agreement with finite-difference time-domain simulations. In addition, as the active layer was made optically thin, ITO-based devices showed diminished J SC while the resonant cavity effect from plasmonic nanostructured electrodes retained J SC. Preliminary ITO-free, flexible devices on PET showed a PCE of 1.82% and those fabricated on ultrathin and conformable Parylene substrates yielded an initial PCE over 1%. The plasmonic electrodes and device designs in this work show promise for developing highly functioning conformable devices that can be applied to numerous needs for lightweight, ubiquitous power generation.
NASA Astrophysics Data System (ADS)
Adake, Chandrashekhar V.; Bhargava, Parag; Gandhi, Prasanna
2018-02-01
Ceramic microstereolithography (CMSL) has emerged as solid free form (SFF) fabrication technology in which complex ceramic parts are fabricated from ceramic suspensions which are formulated by dispersing ceramic particles in UV curable resins. Ceramic parts are fabricated by exposing ceramic suspension to computer controlled UV light which polymerizes resin to polymer and this polymer forms rigid network around ceramic particles. A 3-dimensional part is created by piling cured layers one over the other. These ceramic parts are used to build microelectromechanical (MEMS) devices after thermal treatment. In many cases green ceramic parts can be directly utilized to build MEMS devices. Hence characterization of these parts is essential in terms of their mechanical behaviour prior to their use in MEMS devices. Mechanical behaviour of these green ceramic parts depends on cross link density which in turn depends on chemical structure of monomer, concentrations of photoinitiator and UV energy dose. Mechanical behaviour can be determined with the aid of nanoindentation. And extent of crosslinking can be verified with the aid of DSC. FTIR characterization is used to analyse (-C=C-) double bond conversion. This paper explains characterization tools to predict the mechanical behaviour of green ceramic bodies fabricated in CMSL
NASA Astrophysics Data System (ADS)
Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan
2016-01-01
Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.
The Conductive Silver Nanowires Fabricated by Two-beam Laser Direct Writing on the Flexible Sheet.
He, Gui-Cang; Zheng, Mei-Ling; Dong, Xian-Zi; Jin, Feng; Liu, Jie; Duan, Xuan-Ming; Zhao, Zhen-Sheng
2017-02-02
Flexible electrically conductive nanowires are now a key component in the fields of flexible devices. The achievement of metal nanowire with good flexibility, conductivity, compact and smooth morphology is recognized as one critical milestone for the flexible devices. In this study, a two-beam laser direct writing system is designed to fabricate AgNW on PET sheet. The minimum width of the AgNW fabricated by this method is 187 ± 34 nm with the height of 84 ± 4 nm. We have investigated the electrical resistance under different voltages and the applicable voltage per meter range is determined to be less than 7.5 × 10 3 V/m for the fabricated AgNW. The flexibility of the AgNW is very excellent, since the resistance only increases 6.63% even after the stretched bending of 2000 times at such a small bending radius of 1.0 mm. The proposed two-beam laser direct writing is an efficient method to fabricate AgNW on the flexible sheet, which could be applied in flexible micro/nano devices.
One-step direct-laser metal writing of sub-100 nm 3D silver nanostructures in a gelatin matrix
NASA Astrophysics Data System (ADS)
Kang, SeungYeon; Vora, Kevin; Mazur, Eric
2015-03-01
Developing an ability to fabricate high-resolution, 3D metal nanostructures in a stretchable 3D matrix is a critical step to realizing novel optoelectronic devices such as tunable bulk metal-dielectric optical devices and THz metamaterial devices that are not feasible with alternative techniques. We report a new chemistry method to fabricate high-resolution, 3D silver nanostructures using a femtosecond-laser direct metal writing technique. Previously, only fabrication of 3D polymeric structures or single-/few-layer metal structures was possible. Our method takes advantage of unique gelatin properties to overcome such previous limitations as limited freedom in 3D material design and short sample lifetime. We fabricate more than 15 layers of 3D silver nanostructures with a resolution of less than 100 nm in a stable dielectric matrix that is flexible and has high large transparency that is well-matched for potential applications in the optical and THz metamaterial regimes. This is a single-step process that does not require any further processing. This work will be of interest to those interested in fabrication methods that utilize nonlinear light-matter interactions and the realization of future metamaterials.
Code of Federal Regulations, 2011 CFR
2011-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, or activated carbon... I establish operating limits if I do not use a wet scrubber, fabric filter, electrostatic... emission limits? If you use an air pollution control device other than a wet scrubber, fabric filter...
Code of Federal Regulations, 2012 CFR
2012-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, or activated carbon... I establish operating limits if I do not use a wet scrubber, fabric filter, electrostatic... emission limits? If you use an air pollution control device other than a wet scrubber, fabric filter...
Code of Federal Regulations, 2014 CFR
2014-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, or activated carbon... I establish operating limits if I do not use a wet scrubber, fabric filter, electrostatic... emission limits? If you use an air pollution control device other than a wet scrubber, fabric filter...
Code of Federal Regulations, 2013 CFR
2013-07-01
... I do not use a wet scrubber, fabric filter, electrostatic precipitator, or activated carbon... I establish operating limits if I do not use a wet scrubber, fabric filter, electrostatic... emission limits? If you use an air pollution control device other than a wet scrubber, fabric filter...
A single blue nanorod light emitting diode.
Hou, Y; Bai, J; Smith, R; Wang, T
2016-05-20
We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.
Fabrication and Operation of Paper-Based Analytical Devices
NASA Astrophysics Data System (ADS)
Jiang, Xiao; Fan, Z. Hugh
2016-06-01
This review focuses on the fabrication techniques and operational components of microfluidic paper-based analytical devices (μPADs). Being low-cost, user-friendly, fast, and simple, μPADs have seen explosive growth in the literature in the last decade. Many different materials and technologies have been employed to fabricate μPADs for various applications, including those that employ patterning, the creation of physical boundaries, and three-dimensional structures. In addition to fabrication techniques, flow control and other operational components in μPADs are of great interest. These components enable μPADs to control flow rates, direct flow paths via valves, sequentially deliver reagents automatically, and display test results, all of which will make μPADs more suitable for point-of-care applications.
Al transmon qubits on silicon-on-insulator for quantum device integration
NASA Astrophysics Data System (ADS)
Keller, Andrew J.; Dieterle, Paul B.; Fang, Michael; Berger, Brett; Fink, Johannes M.; Painter, Oskar
2017-07-01
We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T2* = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.
Epoxy bond and stop etch fabrication method
Simmons, Jerry A.; Weckwerth, Mark V.; Baca, Wes E.
2000-01-01
A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.
Uncooled infrared photodetectors in Poland
NASA Astrophysics Data System (ADS)
Piotrowski, Jozef; Piotrowski, Adam
2005-09-01
The history and present status of the middle and long wavelength Hg1xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapor phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. Actually, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.
NASA Astrophysics Data System (ADS)
Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu
2017-04-01
We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.
Si nanocrystals-based multilayers for luminescent and photovoltaic device applications
NASA Astrophysics Data System (ADS)
Lu, Peng; Li, Dongke; Cao, Yunqing; Xu, Jun; Chen, Kunji
2018-06-01
Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based multilayered material is one of the most promising candidates and has been extensively studied. By using multilayered structures, the size and distribution of nanocrystals as well as the barrier thickness between two adjacent Si nanocrystal layers can be well controlled, which is beneficial to the device applications. This paper presents an overview of the fabrication and device applications of Si nanocrystals, especially in luminescent and photovoltaic devices. We first introduce the fabrication methods of Si nanocrystals-based multilayers. Then, we systematically review the utilization of Si nanocrystals in luminescent and photovoltaic devices. Finally, some expectations for further development of the Si nanocrystals-based photonic and photovoltaic devices are proposed. Project supported by the National Natural Science Foundation of China (Nos. 11774155, 11274155).
Intrinsic magnetic refrigeration of a single electron transistor
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ciccarelli, C.; Ferguson, A. J.; Campion, R. P.
In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.
Resonant halide perovskite nanoparticles
NASA Astrophysics Data System (ADS)
Tiguntseva, Ekaterina Y.; Ishteev, Arthur R.; Komissarenko, Filipp E.; Zuev, Dmitry A.; Ushakova, Elena V.; Milichko, Valentin A.; Nesterov-Mueller, Alexander; Makarov, Sergey V.; Zakhidov, Anvar A.
2017-09-01
The hybrid halide perovskites is a prospective material for fabrication of cost-effective optical devices. Unique perovskites properties are used for solar cells and different photonic applications. Recently, perovskite-based nanophotonics has emerged. Here, we consider perovskite like a high-refractive index dielectric material, which can be considered to be a basis for nanoparticles fabrication with Mie resonances. As a result, we fabricate and study resonant perovskite nanoparticles with different sizes. We reveal, that spherical nanoparticles show enhanced photoluminescence signal. The achieved results lay a cornerstone in the field of novel types of organic-inorganic nanophotonics devices with optical properties improved by Mie resonances.
Method of fabricating a back-contact solar cell and device thereof
Li, Bo; Smith, David; Cousins, Peter
2014-07-29
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Method of fabricating a back-contact solar cell and device thereof
Li, Bo; Smith, David; Cousins, Peter
2016-08-02
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.
2017-04-04
An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.
Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.
2016-05-03
An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.
Method of Fabricating NASA-Standard Macro-Fiber Composite Piezoelectric Actuators
NASA Technical Reports Server (NTRS)
High, James W.; Wilkie, W. Keats
2003-01-01
The NASA Macro-Fiber Composite actuator is a flexible piezoelectric composite device designed for controlling vibrations and shape deformations in high performance aerospace structures. A complete method for fabricating the standard NASA Macro-Fiber Composite actuator is presented in this document. When followed precisely, these procedures will yield devices with electromechanical properties identical to the standard actuator manufactured by NASA Langley Research Center.
Elastic Domain Wall Waves in Ferroelectric Ceramics and Single Crystals
1988-07-01
properties of piezoelectric and electrostrictive types of ferroelectric ceramics and single crystals. This was for the purpose of shedding light on the...effectiveness and general characteristics of fabrication techniques, as well as exploring basic physical mechanisms playing a role in the technology of...routing and processing devices on small ferroelectric wafers, fabricated by simple inexpensive poling and biasing techniques. Such devices ma) be
NASA Astrophysics Data System (ADS)
Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim
2017-10-01
ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.
High-Fidelity Piezoelectric Audio Device
NASA Technical Reports Server (NTRS)
Woodward, Stanley E.; Fox, Robert L.; Bryant, Robert G.
2003-01-01
ModalMax is a very innovative means of harnessing the vibration of a piezoelectric actuator to produce an energy efficient low-profile device with high-bandwidth high-fidelity audio response. The piezoelectric audio device outperforms many commercially available speakers made using speaker cones. The piezoelectric device weighs substantially less (4 g) than the speaker cones which use magnets (10 g). ModalMax devices have extreme fabrication simplicity. The entire audio device is fabricated by lamination. The simplicity of the design lends itself to lower cost. The piezoelectric audio device can be used without its acoustic chambers and thereby resulting in a very low thickness of 0.023 in. (0.58 mm). The piezoelectric audio device can be completely encapsulated, which makes it very attractive for use in wet environments. Encapsulation does not significantly alter the audio response. Its small size (see Figure 1) is applicable to many consumer electronic products, such as pagers, portable radios, headphones, laptop computers, computer monitors, toys, and electronic games. The audio device can also be used in automobile or aircraft sound systems.
Wideband monolithically integrated front-end subsystems and components
NASA Astrophysics Data System (ADS)
Mruk, Joseph Rene
This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High quality performance of an 18 to 100 GHz front-end is realized by dividing the single instantaneous antenna into two apertures operating from 18 to 50 and 50 to 100 GHz. Each channel features an impedance transformer, low-pass (low-frequency) or band-pass (high-frequency) filter, and grounded CPW launch. This dual-aperture front-end demonstrates that micromachining technology is now capable of fabricating broadband millimeter-wave components with a high degree of integration.
Optical sensor array platform based on polymer electronic devices
NASA Astrophysics Data System (ADS)
Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.
2007-10-01
Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.
3D printing technologies for electrochemical energy storage
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Feng; Wei, Min; Viswanathan, Vilayanur V.
Fabrication of electrodes and electrolytes play an important role in promoting the performance of electrochemical energy storage (EES) devices such as batteries and supercapacitors. Traditional fabrication techniques have limited capability in controlling the geometry and architecture of the electrode and solid-state electrolytes, which would otherwise compromise the performance. 3D printing, a disruptive manufacturing technology, has emerged as an innovative approach to fabricating EES devices from nanoscale to macroscale and from nanowatt to megawatt, providing great opportunities to accurately control device geometry (e.g., dimension, porosity, morphology) and structure with enhanced specific energy and power densities. Moreover, the additive manufacturing nature ofmore » 3D printing provides excellent controllability of the electrode thickness with much simplified process in a cost effective manner. With the unique spatial and temporal material manipulation capability, 3D printing can integrate multiple nanomaterials in the same print, and multi-functional EES devices (including functional gradient devices) can be fabricated. Herein, we review recent advances in 3D printing of EES devices. We focused on two major 3D printing technologies including direct writing and inkjet printing. The direct material deposition characteristics of these two processes enable them to print on a variety of flat substrates, even a conformal one, well suiting them to applications such as wearable devices and on-chip integrations. Other potential 3D printing techniques such as freeze nano-printing, stereolithography, fused deposition modeling, binder jetting, laminated object manufacturing, and metal 3D printing are also introduced. The advantages and limitations of each 3D printing technology are extensively discussed. More importantly, we provide a perspective on how to integrate the emerging 3D printing with existing technologies to create structures over multiple length scale from macro to nano for EES applications.« less
3D printing technologies for electrochemical energy storage
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Feng; Wei, Min; Viswanathan, Vilayanur V.
We present that fabrication and assembly of electrodes and electrolytes play an important role in promoting the performance of electrochemical energy storage (EES) devices such as batteries and supercapacitors. Traditional fabrication techniques have limitations in controlling the geometry and architecture of the electrode and solid-state electrolytes, which would otherwise compromise the performance. 3D printing, a disruptive manufacturing technology, has emerged as an innovative approach to fabricating EES devices from nanoscale to macroscale, providing great opportunities to accurately control device geometry (e.g., dimension, porosity, and morphology) and structure with enhanced specific energy and power densities. Moreover, the “additive” manufacturing nature ofmore » 3D printing provides excellent controllability of the electrode thickness with much simplified process in a cost effective manner. Additionally, with the unique spatial and temporal material manipulation capability, 3D printing can integrate multiple nano-materials in the same print, and multi-functional EES devices (including functional gradient devices) can be fabricated. Herein, we review recent advances in 3D printing of EES devices. We focus on two major 3D printing technologies including direct writing and inkjet printing. The direct material deposition characteristics of these two processes enable them to print on a variety of flat substrates, even a conformal one, well suiting them to applications such as wearable devices and on-chip integrations. Other potential 3D printing techniques such as freeze nano-printing, stereolithography, fused deposition modeling, binder jetting, laminated object manufacturing, and metal 3D printing are also introduced. The advantages and limitations of each 3D printing technology are extensively discussed. More importantly, we provide a perspective on how to integrate the emerging 3D printing with existing technologies to create structures over multiple length scale from nano to macro for EES applications.« less
Kim, Soon-Ii; Kim, Hyun-Kyung; Koh, Young-Yull; Clark, J Marshall; Ahn, Young-Joon
2006-08-01
The toxicity of formulations of oil of cassia, Cinnamomum cassia Blume, (20 and 50 g L(-1) sprays and 100% oil-based fumigant) to adult Dermatophagoides farinae Hughes and D. pteronyssinus Trouessart was examined using contact and vapour-phase toxicity bioassays. Results were compared with the lethal activity of three commercial acaricides: benzyl benzoate, dibutyl phthalate and diethyl-m-toluamide (deet). The contact toxicity of cassia oil to both dust mite species was comparable with that of benzyl benzoate but was higher than that of the other two acaricides. Sprays containing 20 and 50 g L(-1) cassia oil were effective against both mite species when applied to fabric, glass, paper, plastic, tin or wood substrates. Applications of the 50 g L(-1) spray to different space volumes and surface areas determined that 50-60 mg of cassia oil was needed to control dust mites in 3.4 m(3) or in 1 m(2). In tests with fumigant devices, toxicity varied according to the thickness of non-woven fabric covering the device, the exposure time, the number of fumigant devices used and the volume of the space sprayed. Fumigant toxicity to adult D. pteronyssinus was more pronounced with devices enclosed in thinner (40 microm) versus thicker (45 or 50 microm) non-woven fabric covers. A single fumigant device with a 40 microm thick non-woven fabric cover resulted in substantial control in a space of 0.05 m(3) but exhibited only moderate to weak control in spaces >or= 0.097 m(3) at 4 days after application. Two fumigant devices gave 88% mortality in a space of 1.73 m(3). Cassia oil applied as sprays or in fumigant devices appears to provide effective protection of humans from house dust mites.
3D printing technologies for electrochemical energy storage
Zhang, Feng; Wei, Min; Viswanathan, Vilayanur V.; ...
2017-08-24
We present that fabrication and assembly of electrodes and electrolytes play an important role in promoting the performance of electrochemical energy storage (EES) devices such as batteries and supercapacitors. Traditional fabrication techniques have limitations in controlling the geometry and architecture of the electrode and solid-state electrolytes, which would otherwise compromise the performance. 3D printing, a disruptive manufacturing technology, has emerged as an innovative approach to fabricating EES devices from nanoscale to macroscale, providing great opportunities to accurately control device geometry (e.g., dimension, porosity, and morphology) and structure with enhanced specific energy and power densities. Moreover, the “additive” manufacturing nature ofmore » 3D printing provides excellent controllability of the electrode thickness with much simplified process in a cost effective manner. Additionally, with the unique spatial and temporal material manipulation capability, 3D printing can integrate multiple nano-materials in the same print, and multi-functional EES devices (including functional gradient devices) can be fabricated. Herein, we review recent advances in 3D printing of EES devices. We focus on two major 3D printing technologies including direct writing and inkjet printing. The direct material deposition characteristics of these two processes enable them to print on a variety of flat substrates, even a conformal one, well suiting them to applications such as wearable devices and on-chip integrations. Other potential 3D printing techniques such as freeze nano-printing, stereolithography, fused deposition modeling, binder jetting, laminated object manufacturing, and metal 3D printing are also introduced. The advantages and limitations of each 3D printing technology are extensively discussed. More importantly, we provide a perspective on how to integrate the emerging 3D printing with existing technologies to create structures over multiple length scale from nano to macro for EES applications.« less
NASA Technical Reports Server (NTRS)
Prasad, Narashimha S.; Taylor, Patrick J.; Trivedi, Sudhir B.; Kutcher, Susan
2010-01-01
We report the results of fabrication and testing of a thermoelectric power generation module. The module was fabricated using a new "flip-chip" module assembly technique that is scalable and modular. This technique results in a low value of contact resistivity ( < or = 10(exp 5) Ohms-sq cm). It can be used to leverage new advances in thin-film and nanostructured materials for the fabrication of new miniature thermoelectric devices. It may also enable monolithic integration of large devices or tandem arrays of devices on flexible or curved surfaces. Under mild testing, a power of 22 mW/sq cm was obtained from small (<100 K) temperature differences. At higher, more realistic temperature differences, approx.500 K, where the efficiency of these materials greatly improves, this power density would scale to between 0.5 and 1 Watt/cm2. These results highlight the excellent potential for the generation and scavenging of electrical power of practical and usable magnitude for remote applications using thermoelectric power generation technologies.
NASA Astrophysics Data System (ADS)
El-Kady, Maher F.; Kaner, Richard B.
2013-02-01
The rapid development of miniaturized electronic devices has increased the demand for compact on-chip energy storage. Microscale supercapacitors have great potential to complement or replace batteries and electrolytic capacitors in a variety of applications. However, conventional micro-fabrication techniques have proven to be cumbersome in building cost-effective micro-devices, thus limiting their widespread application. Here we demonstrate a scalable fabrication of graphene micro-supercapacitors over large areas by direct laser writing on graphite oxide films using a standard LightScribe DVD burner. More than 100 micro-supercapacitors can be produced on a single disc in 30 min or less. The devices are built on flexible substrates for flexible electronics and on-chip uses that can be integrated with MEMS or CMOS in a single chip. Remarkably, miniaturizing the devices to the microscale results in enhanced charge-storage capacity and rate capability. These micro-supercapacitors demonstrate a power density of ~200 W cm-3, which is among the highest values achieved for any supercapacitor.
Development and fabrication of an augmented power transistor
NASA Technical Reports Server (NTRS)
Geisler, M. J.; Hill, F. E.; Ostop, J. A.
1983-01-01
The development of device design and processing techniques for the fabrication of an augmented power transistor capable of fast switching and high voltage power conversion is discussed. The major device goals sustaining voltages in the range of 800 to 1000 V at 80 A and 50 A, respectively, at a gain of 14. The transistor switching rise and fall times were both to have been less than 0.5 microseconds. The development of a passivating glass technique to shield the device high voltage junction from moisture and ionic contaminants is discussed as well as the development of an isolated package that separates the thermal and electrical interfaces. A new method was found to alloy the transistors to the molybdenum disc at a relatively low temperature. The measured electrical performance compares well with the predicted optimum design specified in the original proposed design. A 40 mm diameter transistor was fabricated with seven times the emitter area of the earlier 23 mm diameter device.
Fabrication of a liquid-gated enzyme field effect device for sensitive glucose detection.
Fathollahzadeh, M; Hosseini, M; Haghighi, B; Kolahdouz, M; Fathipour, M
2016-06-14
This study presents fabrication of a liquid-gated enzyme field effect device and its implementation as a glucose biosensor. The device consisted of four electrodes on a glass substrate with a channel functionalized by carboxylated multi-walled carbon nanotubes-polyaniline nanocomposite (MWCNTCOOH/PAn) and glucose oxidase. The resistance of functionalized channel increased with increasing the concentration of glucose when an electric field was applied to the liquid gate. The most effective and stable performance was obtained at the applied electric field of 100 mV. The device resistance, R, exhibited a linear relationship with the logarithm of glucose concentration in the range between 0.005 and 500 mM glucose. The detection limit (S/N = 3) for glucose was about 0.5 μM. Large effective area and good conductivity properties of MWCNTCOOH/PAn nanocomposite were the key features of the fabricated sensitive and stable glucose biosensor. Copyright © 2016 Elsevier B.V. All rights reserved.
Passively aligned multichannel fiber-pigtailing of planar integrated optical waveguides
NASA Astrophysics Data System (ADS)
Kremmel, Johannes; Lamprecht, Tobias; Crameri, Nino; Michler, Markus
2017-02-01
A silicon device to simplify the coupling of multiple single-mode fibers to embedded single-mode waveguides has been developed. The silicon device features alignment structures that enable a passive alignment of fibers to integrated waveguides. For passive alignment, precisely machined V-grooves on a silicon device are used and the planar lightwave circuit board features high-precision structures acting as a mechanical stop. The approach has been tested for up to eight fiber-to-waveguide connections. The alignment approach, the design, and the fabrication of the silicon device as well as the assembly process are presented. The characterization of the fiber-to-waveguide link reveals total coupling losses of (0.45±0.20 dB) per coupling interface, which is significantly lower than the values reported in earlier works. Subsequent climate tests reveal that the coupling losses remain stable during thermal cycling but increases significantly during an 85°C/85 Rh-test. All applied fabrication and bonding steps have been performed using standard MOEMS fabrication and packaging processes.
Gaitas, Angelo; Hower, Robert W
2014-09-15
We describe a method for fabricating an aperture on a fluidic cantilever device using SU-8 as a structural material. The device can ultimately be used for patch clamping, microinjections, fluidic delivery, fluidic deposition, and micromaterial removal. In the first generation of this device, the initial aperture diameter is 10 μ m and is fabricated on a silicon-on-insulator (SOI) wafer that is structurally used to define the aperture. The aperture can be reduced in size through mask design. This self-aligned process allows for patterning on the sharp tip projecting out of the fluidic plane on the cantilever and is batch fabricated, reducing the cost and time for manufacture. The initial mask, SOI device layer thickness, and the width of the base of the tip define the size of the aperture. The SU-8 micromachined cantilever includes an electrode and a force sensing mechanism. The cantilever can be easily integrated with an atomic force microscope or an optical microscope.
Modeling and fabrication of 4H-SiC Schottky junction
NASA Astrophysics Data System (ADS)
Martychowiec, A.; Pedryc, A.; Kociubiński, A.
2017-08-01
The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD's construction. Simulations - as a crucial process of designing electronic devices - have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes.
3D printing of tissue-simulating phantoms for calibration of biomedical optical devices
NASA Astrophysics Data System (ADS)
Zhao, Zuhua; Zhou, Ximing; Shen, Shuwei; Liu, Guangli; Yuan, Li; Meng, Yuquan; Lv, Xiang; Shao, Pengfei; Dong, Erbao; Xu, Ronald X.
2016-10-01
Clinical utility of many biomedical optical devices is limited by the lack of effective and traceable calibration methods. Optical phantoms that simulate biological tissues used for optical device calibration have been explored. However, these phantoms can hardly simulate both structural and optical properties of multi-layered biological tissue. To address this limitation, we develop a 3D printing production line that integrates spin coating, light-cured 3D printing and Fused Deposition Modeling (FDM) for freeform fabrication of optical phantoms with mechanical and optical heterogeneities. With the gel wax Polydimethylsiloxane (PDMS), and colorless light-curable ink as matrix materials, titanium dioxide (TiO2) powder as the scattering ingredient, graphite powder and black carbon as the absorption ingredient, a multilayer phantom with high-precision is fabricated. The absorption and scattering coefficients of each layer are measured by a double integrating sphere system. The results demonstrate that the system has the potential to fabricate reliable tissue-simulating phantoms to calibrate optical imaging devices.
Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment
NASA Astrophysics Data System (ADS)
Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool
2016-01-01
Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.
NASA Astrophysics Data System (ADS)
Li, Yang; Yao, Zhao; Fu, Xiao-Qian; Li, Zhi-Ming; Shan, Fu-Kai; Wang, Cong
2017-05-01
Recently, integrated passive devices have become increasingly popular; inductor realization, in particular, offers interesting high performance for RF modules and systems. In this paper, a development of differential inductor fabricated by integrated passive devices technology using a double air-bridge structure is presented. A study of the model development of the differential inductor is first demonstrated. In this model section, a segment box analysis method is applied to provide a clear presentation of the differential inductor. Compared with other work that only shows a brief description of the process, the integrated passive devices process used to fabricate the inductor in this study is elaborated on. Finally, a characterization of differential inductors with different physical layout parameters is illustrated based on inductance and quality factors, which provides a valuable reference for realizing high performance. The proposed work provides a good solution for the design, fabrication and practical application of RF modules and systems.
Direct growth of graphene-dielectric bi-layer structure on device substrates from Si-based polymer
NASA Astrophysics Data System (ADS)
Seo, Hong-Kyu; Kim, Kyunghun; Min, Sung-Yong; Lee, Yeongjun; Eon Park, Chan; Raj, Rishi; Lee, Tae-Woo
2017-06-01
To facilitate the utilization of graphene films in conventional semiconducting devices (e.g. transistors and memories) which includes an insulating layer such as gate dielectric, facile synthesis of bi-layers composed of a graphene film and an insulating layer by one-step thermal conversion will be very important. We demonstrate a simple, inexpensive, scalable and patternable process to synthesize graphene-dielectric bi-layer films from solution-processed polydimethylsiloxane (PDMS) under a Ni capping layer. This method fabricates graphene-dielectric bi-layer structure simultaneously directly on substrate by thermal conversion of PDMS without using additional graphene transfer and patterning process or formation of an expensive dielectric layer, which makes the device fabrication process much easier. The graphene-dielectric bi-layer on a conducting substrate was used in bottom-contact pentacene field-effect transistors that showed ohmic contact and small hysteresis. Our new method will provide a way to fabricate flexible electronic devices simply and inexpensively.
Fabrication of PDMS-Based Microfluidic Devices: Application for Synthesis of Magnetic Nanoparticles
NASA Astrophysics Data System (ADS)
Thu, Vu Thi; Mai, An Ngoc; Le The Tam; Van Trung, Hoang; Thu, Phung Thi; Tien, Bui Quang; Thuat, Nguyen Tran; Lam, Tran Dai
2016-05-01
In this work, we have developed a convenient approach to synthesize magnetic nanoparticles with relatively high magnetization and controllable sizes. This was realized by combining the traditional co-precipitation method and microfluidic techniques inside microfluidic devices. The device was first designed, and then fabricated using simplified soft-lithography techniques. The device was utilized to synthesize magnetite nanoparticles. The synthesized nanomaterials were thoroughly characterized using field emission scanning electron microscopy and a vibrating sample magnetometer. The results demonstrated that the as-prepared device can be utilized as a simple and effective tool to synthesize magnetic nanoparticles with the sizes less than 10 nm and magnetization more than 50 emu/g. The development of these devices opens new strategies to synthesize nanomaterials with more precise dimensions at narrow size-distribution and with controllable behaviors.
NASA Astrophysics Data System (ADS)
Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad
2017-03-01
Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.
Photo-Detection on Narrow-Bandgap High-Mobility 2D Semiconductors
NASA Astrophysics Data System (ADS)
Charnas, Adam; Qiu, Gang; Deng, Yexin; Wang, Yixiu; Du, Yuchen; Yang, Lingming; Wu, Wenzhuo; Ye, Peide
Photo-detection and energy harvesting device concepts have been demonstrated widely in 2D materials such as graphene, TMDs, and black phosphorus. In this work, we demonstrate anisotropic photo-detection achieved using devices fabricated from hydrothermally grown narrow-bandgap high-mobility 2D semiconductor. Back-gated FETs were fabricated by transferring the 2D flakes onto a Si/SiO2 substrate and depositing various metal contacts across the flakes to optimize the access resistance for optoelectronic devices. Photo-responsivity was measured and mapped by slightly biasing the devices and shining a laser spot at different locations of the device to observe and map the resulting photo-generated current. Optimization of the Schottky barrier height for both n and p at the metal-2D interfaces using asymmetric contact engineering was performed to improve device performance.
21 CFR 872.3670 - Resin impression tray material.
Code of Federal Regulations, 2010 CFR
2010-04-01
... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3670 Resin impression tray material. (a) Identification. Resin impression tray material is a device intended for use in a two-step dental mold fabricating process. The device consists of a resin material, such as methyl methacrylate, and is used to form a...
21 CFR 872.3670 - Resin impression tray material.
Code of Federal Regulations, 2011 CFR
2011-04-01
... (CONTINUED) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3670 Resin impression tray material. (a) Identification. Resin impression tray material is a device intended for use in a two-step dental mold fabricating process. The device consists of a resin material, such as methyl methacrylate, and is used to form a...
On-chip self-assembly of cell embedded microstructures to vascular-like microtubes.
Yue, Tao; Nakajima, Masahiro; Takeuchi, Masaru; Hu, Chengzhi; Huang, Qiang; Fukuda, Toshio
2014-03-21
Currently, research on the construction of vascular-like tubular structures is a hot area of tissue engineering, since it has potential applications in the building of artificial blood vessels. In this paper, we report a fluidic self-assembly method using cell embedded microstructures to construct vascular-like microtubes. A novel 4-layer microfluidic device was fabricated using polydimethylsiloxane (PDMS), which contains fabrication, self-assembly and extraction areas inside one channel. Cell embedded microstructures were directly fabricated using poly(ethylene glycol) diacrylate (PEGDA) in the fabrication area, namely on-chip fabrication. Self-assembly of the fabricated microstructures was performed in the assembly area which has a micro well. Assembled tubular structures (microtubes) were extracted outside the channel into culture dishes using a normally closed (NC) micro valve in the extraction area. The self-assembly mechanism was experimentally demonstrated. The performance of the NC micro valve and embedded cell concentration were both evaluated. Fibroblast (NIH/3T3) embedded vascular-like microtubes were constructed inside this reusable microfluidic device.
NASA Astrophysics Data System (ADS)
Tartan, Chloe C.; Salter, Patrick S.; Booth, Martin J.; Morris, Stephen M.; Elston, Steve J.
2016-09-01
Direct Laser Writing (DLW) by two-photon photopolymerization (TPP) enables the fabrication of micron-scale polymeric structures in soft matter systems. The technique has implications in a broad range of optics and photonics; in particular fast-switching liquid crystal (LC) modes for the development of next generation display technologies. In this paper, we report two different methodologies using our TPP-based fabrication technique. Two explicit examples are provided of voltage-dependent LC director profiles that are inherently unstable, but which appear to be promising candidates for fast-switching photonics applications. In the first instance, 1 μm-thick periodic walls of polymer network are written into a planar aligned (parallel rubbed) nematic pi-cell device containing a nematic LC-monomer mixture. The structures are fabricated when the device is electrically driven into a fast-switching nematic LC state and aberrations induced by the device substrates are corrected for by virtue of the adaptive optics elements included within the DLW setup. Optical polarizing microscopy images taken post-fabrication reveal that polymer walls oriented perpendicular to the rubbing direction promote the stability of the so-called optically compensated bend mode upon removal of the externally applied field. In the second case, polymer walls are written in a nematic LC-optically adhesive glue mixture. A polymer- LCs-polymer-slices or `POLICRYPS' template is formed by immersing the device in acetone post-fabrication to remove any remaining non-crosslinked material. Injecting the resultant series of polymer microchannels ( 1 μm-thick) with a short-pitch, chiral nematic LC mixture leads to the spontaneous alignment of a fast-switching chiral nematic mode, where the helical axis lies parallel to the glass substrates. Optimal contrast between the bright and dark states of the uniform lying helix alignment is achieved when the structures are spaced at the order of the device thickness, which was also found to be the case for the achiral system. The high resolution DLW technique limits structures to the focal spot size of the beam, 1 μm in diameter, such that the transmittance is expected to be significantly enhanced relative to other stabilization techniques. Moreover, both devices remain stable under electrical and thermal cycling.
Semiconductor-based, large-area, flexible, electronic devices
Goyal, Amit [Knoxville, TN
2011-03-15
Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
Goyal, Amit
2014-08-05
Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
Goyal, Amit
2015-03-24
Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Laser-assisted fabrication of single-layer flexible touch sensor
Son, Seokwoo; Park, Jong Eun; Lee, Joohyung; Yang, Minyang; Kang, Bongchul
2016-01-01
Single-layer flexible touch sensor that is designed for the indium-tin-oxide (ITO)-free, bendable, durable, multi-sensible, and single layer transparent touch sensor was developed via a low-cost and one-step laser-induced fabrication technology. To this end, an entirely novel approach involving material, device structure, and even fabrication method was adopted. Conventional metal oxides based multilayer touch structure was substituted by the single layer structure composed of integrated silver wire networks of sensors and bezel interconnections. This structure is concurrently fabricated on a glass substitutive plastic film via the laser-induced fabrication method using the low-cost organometallic/nanoparticle hybrid complex. In addition, this study addresses practical solutions to heterochromia and interference problem with a color display unit. As a result, a practical touch sensor is successfully demonstrated through resolving the heterochromia and interference problems with color display unit. This study could provide the breakthrough for early realization of wearable device. PMID:27703204
Micromechanical Waveguide Mounts for Hot Electron Bolometer Terahertz Mixers
NASA Astrophysics Data System (ADS)
Brandt, Michael; Jacobs, Karl; Honingh, C. E.; Stodolka, Jörg
The superior beam matching of waveguide horn antennas to a telescope suggests using waveguide mounts even at THz-frequencies. In contrast to the more common quasi-optical (substrate lens) designs, the exceedingly small dimensions of the waveguide require novel micro-mechanical fabrication technologies. We will present a novel fabrication scheme for 1.9 THz waveguide mixers for SOFIA. Hot Electron Bolometer devices (HEB) are fabricated on 2 μm thick Si3N4 membrane strips. The strips are robust enough to be mounted on a separately fabricated Si support frame using an adapted flip-chip technology. Mounted onto the frame, the devices can be easily positioned and glued into a copper waveguide mount. Further developments regarding micro-mechanical processes to fabricate this copper waveguide mount and the receiving horn antenna will be presented, as well as the KOSMA Micro Assembly Station and its capabilities to handle mixer substrates.
High density pixel array and laser micro-milling method for fabricating array
NASA Technical Reports Server (NTRS)
McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)
2003-01-01
A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.
Patterning techniques for metal organic frameworks.
Falcaro, Paolo; Buso, Dario; Hill, Anita J; Doherty, Cara M
2012-06-26
The tuneable pore size and architecture, chemical properties and functionalization make metal organic frameworks (MOFs) attractive versatile stimuli-responsive materials. In this context, MOFs hold promise for industrial applications and a fervent research field is currently investigating MOF properties for device fabrication. Although the material properties have a crucial role, the ability to precisely locate the functional material is fundamental for device fabrication. In this progress report, advancements in the control of MOF positioning and precise localization of functional materials within MOF crystals are presented. Advantages and limitations of each reviewed technique are critically investigated, and several important gaps in the technological development for device fabrication are highlighted. Finally, promising patterning techniques are presented which are inspired by previous studies in organic and inorganic crystal patterning for the future of MOF lithography. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Lithium and boron based semiconductors for thermal neutron counting
NASA Astrophysics Data System (ADS)
Kargar, Alireza; Tower, Joshua; Hong, Huicong; Cirignano, Leonard; Higgins, William; Shah, Kanai
2011-09-01
Thermal neutron detectors in planar configuration were fabricated from LiInSe2 and B2Se3 crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from 241AmBe (neutron source on all samples), as well as 137Cs and 60Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the 241AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe2 and B2Se3 devices showed response to thermal neutrons of the 241AmBe source.
NASA Astrophysics Data System (ADS)
Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin
2013-10-01
Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.
Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin
2013-10-10
Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.
Micromilling: A method for ultra-rapid prototyping of plastic microfluidic devices
Guckenberger, David J.; de Groot, Theodorus E.; Wan, Alwin M.D.; Beebe, David J.; Young, Edmond W. K.
2015-01-01
This tutorial review offers protocols, tips, insight, and considerations for practitioners interested in using micromilling to create microfluidic devices. The objective is to provide a potential user with information to guide them on whether micromilling would fill a specific need within their overall fabrication strategy. Comparisons are made between micromilling and other common fabrication methods for plastics in terms of technical capabilities and cost. The main discussion focuses on “how-to” aspects of micromilling, to enable a user to select proper equipment and tools, and obtain usable microfluidic parts with minimal start-up time and effort. The supplementary information provides more extensive discussion on CNC mill setup, alignment, and programming. We aim to reach an audience with minimal prior experience in milling, but with strong interests in fabrication of microfluidic devices. PMID:25906246
DOE Office of Scientific and Technical Information (OSTI.GOV)
Qiu, Yu; Lei, Jixue; Yin, Bing
2014-03-17
A simple two-step hydrothermal process was proposed for enhancing the performance of the nanogenerator on flexible and wearable terylene-fabric substrate. With this method, a significant enhancement in output voltage of the nanogenerator from ∼10 mV to 7 V was achieved, comparing with the one by conventional one-step process. In addition, another advantage with the devices synthesized by two-step hydrothermal process was that their output voltages are only sensitive to strain rather than strain rate. The devices with a high output voltage have the ability to power common electric devices and will have important applications in flexible electronics and wearable devices.
NASA Astrophysics Data System (ADS)
Sheridan, David Charles
Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].
Vertical-cavity surface-emitting lasers - Design, growth, fabrication, characterization
NASA Astrophysics Data System (ADS)
Jewell, Jack L.; Lee, Y. H.; Harbison, J. P.; Scherer, A.; Florez, L. T.
1991-06-01
The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 microns to above 50 microns. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching; packaging and arrays; and ultrasmall devices.
Selective Plasma Deposition of Fluorocarbon Films on SAMs
NASA Technical Reports Server (NTRS)
Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.
2006-01-01
A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.
Optimized micromirror arrays for adaptive optics
DOE Office of Scientific and Technical Information (OSTI.GOV)
Michalicek, M. Adrian
This paper describes the design, layout, fabrication, and surface characterization of highly optimized surface micromachined micromirror devices. Design considerations and fabrication capabilities are presented. These devices are fabricated in the state-of-the-art, four-level, planarized, ultra-low-stress polysilicon process available at Sandia National Laboratories known as the Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT). This enabling process permits the development of micromirror devices with near-ideal characteristics that have previously been unrealizable in standard three-layer polysilicon processes. The reduced 1 {mu}m minimum feature sizes and 0.1 {mu}m mask resolution make it possible to produce dense wiring patterns and irregularly shaped flexures. Likewise, mirror surfaces canmore » be uniquely distributed and segmented in advanced patterns and often irregular shapes in order to minimize wavefront error across the pupil. The ultra-low-stress polysilicon and planarized upper layer allow designers to make larger and more complex micromirrors of varying shape and surface area within an array while maintaining uniform performance of optical surfaces. Powerful layout functions of the AutoCAD editor simplify the design of advanced micromirror arrays and make it possible to optimize devices according to the capabilities of the fabrication process. Micromirrors fabricated in this process have demonstrated a surface variance across the array from only 2{endash}3 nm to a worst case of roughly 25 nm while boasting active surface areas of 98{percent} or better. Combining the process planarization with a {open_quotes}planarized-by-design{close_quotes} approach will produce micromirror array surfaces that are limited in flatness only by the surface deposition roughness of the structural material. Ultimately, the combination of advanced process and layout capabilities have permitted the fabrication of highly optimized micromirror arrays for adaptive optics. {copyright} {ital 1999 American Institute of Physics.}« less
High Efficiency Coupling of Optical Fibres with SU8 Micro-droplet Using Laser Welding Process
NASA Astrophysics Data System (ADS)
Yardi, Seema; Gupta, Ankur; Sundriyal, Poonam; Bhatt, Geeta; Kant, Rishi; Boolchandani, D.; Bhattacharya, Shantanu
2016-09-01
Apart from micro- structure fabrication, ablation, lithography etc., lasers find a lot of utility in various areas like precision joining, device fabrication, local heat delivery for surface texturing and local change of microstructure fabrication of standalone optical micro-devices (like microspheres, micro-prisms, micro-scale ring resonators, optical switches etc). There is a wide utility of such systems in chemical/ biochemical diagnostics and also communications where the standalone optical devices exist at a commercial scale but chip based devices with printed optics are necessary due to coupling issues between printed structures and external optics. This paper demonstrates a novel fabrication strategy used to join standalone optical fibres to microchip based printed optics using a simple SU8 drop. The fabrication process is deployed for fiber to fiber optical coupling and coupling between fiber and printed SU-8 waveguides. A CO2 laser is used to locally heat the coupling made up of SU8 material. Optimization of various dimensional parameters using design of experiments (DOE) on the bonded assembly has been performed as a function of laser power, speed, cycle control, spot size so on so forth. Exclusive optical [RF] modelling has been performed to estimate the transmissibility of the optical fibers bonded to each other on a surface with SU8. Our studies indicate the formation of a Whispering gallery mode (WGM) across the micro-droplet leading to high transmissibility of the signal. Through this work we have thus been able to develop a method of fabrication for optical coupling of standalone fibers or coupling of on-chip optics with off-chip illumination/detection.
NASA Technical Reports Server (NTRS)
Goodrich, W. D.; Staimach, C. J.
1977-01-01
Nickel alloy/constantan device accurately measures surface temperature at precise locations. Device is moderate in cost and simplifies fabrication of highly-instrumented seamless-surface heat-transfer models. Device also applies to metal surfaces if constantan wire has insulative coat.
Novel folding device for manufacturing aerospace composite structures
NASA Astrophysics Data System (ADS)
Tewfic, Tarik; Sarhadi, M.
2000-10-01
A new manufacturing methodology, termed shape-inclusive lay-up has been applied that allows the generation of three-dimensional preforms for the resin transfer molding (RTM) process. A flexible novel folding device for forming dry fabrics including non-crimp fabric (NCF) preform is designed and integrated with a Material Delivery System (MDS) into a robotic cell for manufacturing dry fiber composite aerospace components. The paper describes detailed design, implementation and operational performance of a prototype device. The proposed folding device has been implemented and tested by manufacturing a range of reinforcement structure preforms (C,T,J and I reinforcement preforms), normally used in aerostructure applications. A key advantage of the proposed device is its flexibility. The system is capable of manufacturing a wide range of components of various sizes without the need for reconfiguration.
Laser direct writing of micro- and nano-scale medical devices
Gittard, Shaun D; Narayan, Roger J
2010-01-01
Laser-based direct writing of materials has undergone significant development in recent years. The ability to modify a variety of materials at small length scales and using short production times provides laser direct writing with unique capabilities for fabrication of medical devices. In many laser-based rapid prototyping methods, microscale and submicroscale structuring of materials is controlled by computer-generated models. Various laser-based direct write methods, including selective laser sintering/melting, laser machining, matrix-assisted pulsed-laser evaporation direct write, stereolithography and two-photon polymerization, are described. Their use in fabrication of microstructured and nanostructured medical devices is discussed. Laser direct writing may be used for processing a wide variety of advanced medical devices, including patient-specific prostheses, drug delivery devices, biosensors, stents and tissue-engineering scaffolds. PMID:20420557
Evaluation of Strain Measurement Devices for Inflatable Structures
NASA Technical Reports Server (NTRS)
Litteken, Douglas A.
2017-01-01
Inflatable structures provide a significant volume savings for future NASA deep space missions. The complexity of these structures, however, provides difficulty for engineers in designing, analyzing, and testing. Common strain measurement systems for metallic parts cannot be used directly on fabrics. New technologies must be developed and tested to accuractly measure the strain of inflatable structures. This paper documents the testing of six candidate strain measurement devices for use on fabrics. The resistance devices tested showed significant hysteresis during creep and cyclic testing. The capacitive device, however, showed excellent results and little-to-no hysteresis. Because of this issue, only two out of the six proposed devices will continue in development. The resulting data and lessons learned from this effort provides direction for continued work to produce a structural health monitoring system for inflatable habitats.
Evaluation of Strain Measurement Devices for Inflatable Structures
NASA Technical Reports Server (NTRS)
Litteken, Doug
2017-01-01
Inflatable structures provide a significant volume savings for future NASA deep space missions. The complexity of these structures, however, provides difficulty for engineers in designing, analyzing, and testing. Common strain measurement systems for metallic parts cannot be used directly on fabrics. New technologies must be developed and tested to accurately measure the strain of inflatable structures. This paper documents the testing of six candidate strain measurement devices for use on fabrics. The resistance devices tested showed significant hysteresis during creep and cyclic testing. The capacitive device, however, showed excellent results and little-to-no hysteresis. Because of this issue, only two out of the six proposed devices will continue in development. The resulting data and lessons learned from this effort provides direction for continued work to produce a structural health monitoring system for inflatable habitats.
Architectures for Improved Organic Semiconductor Devices
NASA Astrophysics Data System (ADS)
Beck, Jonathan H.
Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.
Progress Report for the Joint Services Electronics Program
1991-06-30
AIGaAs MODFET layers. Both wet etching and reactive ion etching have been used to fabricate the channels. The CAIBE method will also be investigated in...potential for fabricating nanometer scale device structures through surface modification of various types. Using this JSEP research as a foundation...Kerkhoven, "Calculation of velocity overshoot in submicron devices using an augmented drift-diffusion model," Solid-State Electron. (to appear). (JSEP/NSF
ERIC Educational Resources Information Center
Namwong, Pithakpong; Jarujamrus, Purim; Amatatongchai, Maliwan; Chairam, Sanoe
2018-01-01
In this article, a low-cost, simple, and rapid fabrication of paper-based analytical devices (PADs) using a wax screen-printing method is reported here. The acid-base reaction is implemented in the simple PADs to demonstrate to students the chemistry concept of a limiting reagent. When a fixed concentration of base reacts with a gradually…
Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul
2011-01-01
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
Fabrication of Circuits on Flexible Substrates Using Conductive SU-8 for Sensing Applications
Gerardo, Carlos D.; Cretu, Edmond; Rohling, Robert
2017-01-01
This article describes a new low-cost rapid microfabrication technology for high-density interconnects and passive devices on flexible substrates for sensing applications. Silver nanoparticles with an average size of 80 nm were used to create a conductive SU-8 mixture with a concentration of wt 25%. The patterned structures after hard baking have a sheet resistance of 11.17 Ω/☐. This conductive SU-8 was used to pattern planar inductors, capacitors and interconnection lines on flexible Kapton film. The conductive SU-8 structures were used as a seed layer for a subsequent electroplating process to increase the conductivity of the devices. Examples of inductors, resistor-capacitor (RC) and inductor-capacitor (LC) circuits, interconnection lines and a near-field communication (NFC) antenna are presented as a demonstration. As an example of high-resolution miniaturization, we fabricated microinductors having line widths of 5 μm. Mechanical bending tests were successful down to a 5 mm radius. To the best of the authors’ knowledge, this is the first report of conductive SU-8 used to fabricate such planar devices and the first on flexible substrates. This is a proof of concept that this fabrication approach can be used as an alternative for microfabrication of planar passive devices on flexible substrates. PMID:28629134
NASA Astrophysics Data System (ADS)
Liang, Chao; Liu, Chong; Liu, Ziyang; Meng, Fanjian; Li, Jingmin
2017-11-01
Ultrasonic bonding is a commonly-used method for fabrication of thermoplastic microfluidic devices. However, due to the existence of the energy director (a convex structure to concentrate the ultrasonic energy), it is difficult to control its molten polymer flow, which may result in a small gap between the bonding interface or microchannel clogging. In this paper, we present an approach to address these issues. Firstly, the microchannels were patterned onto the PMMA sheets using hot embossing with the wire electrical discharge machined molds. Then, a small bulge, which was formed at the edge of the laser-ablated groove (LG), was generated around the microchannel using a CO2 laser ablation system. By using the bulge to concentrate the ultrasonic energy, there was no need for fabricating the complicated and customized energy director. When the bulge was melted, it was able to flow into the LG which overcame the ‘gap’ and ‘clogging’ problems. Here, two types of two-layer microfluidic devices and a five-layer micromixer were fabricated to validate its performance. Our results showed that these thermoplastic microdevices can be successfully bonded by using this method. The liquid leakage was not observed in both the capillary-driven flowing test and the pressure-driven mixing experiments. It is a potential method for bonding the thermoplastic microfluidic devices.
Goyal, Amit [Knoxville, TN
2012-05-15
Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
3D direct writing fabrication of electrodes for electrochemical storage devices
NASA Astrophysics Data System (ADS)
Wei, Min; Zhang, Feng; Wang, Wei; Alexandridis, Paschalis; Zhou, Chi; Wu, Gang
2017-06-01
Among different printing techniques, direct ink writing is commonly used to fabricate 3D battery and supercapacitor electrodes. The major advantages of using the direct ink writing include effectively building 3D structure for energy storage devices and providing higher power density and higher energy density than traditional techniques due to the increased surface area of electrode. Nevertheless, direct ink writing has high standards for the printing inks, which requires high viscosity, high yield stress under shear and compression, and well-controlled viscoelasticity. Recently, a number of 3D-printed energy storage devices have been reported, and it is very important to understand the printing process and the ink preparation process for further material design and technology development. We discussed current progress of direct ink writing technologies by using various electrode materials including carbon nanotube-based material, graphene-based material, LTO (Li4Ti5O12), LFP (LiFePO4), LiMn1-xFexPO4, and Zn-based metallic oxide. Based on achieve electrochemical performance, these 3D-printed devices deliver performance comparable to the energy storage device fabricated using traditional methods still leaving large room for further improvement. Finally, perspectives are provided on the potential future direction of 3D printing for all solid-state electrochemical energy storage devices.
Vohra, Akhil; Carmichael, R Stephen; Carmichael, Tricia Breen
2016-10-11
Transparent butyl rubber is a new elastomer that has the potential to revolutionize stretchable electronics due to its intrinsically low gas permeability. Encapsulating organic electronic materials and devices with transparent butyl rubber protects them from problematic degradation due to oxygen and moisture, preventing premature device failure and enabling the fabrication of stretchable organic electronic devices with practical lifetimes. Here, we report a methodology to alter the surface chemistry of transparent butyl rubber to advance this material from acting as a simple device encapsulant to functioning as a substrate primed for direct device fabrication on its surface. We demonstrate a combination of plasma and chemical treatment to deposit a hydrophilic silicate layer on the transparent butyl rubber surface to create a new layered composite that combines Si-OH surface chemistry with the favorable gas-barrier properties of bulk transparent butyl rubber. We demonstrate that these surface Si-OH groups react with organosilanes to form self-assembled monolayers necessary for the deposition of electronic materials, and furthermore demonstrate the fabrication of stretchable gold wires using nanotransfer printing of gold films onto transparent butyl rubber modified with a thiol-terminated self-assembled monolayer. The surface modification of transparent butyl rubber establishes this material as an important new elastomer for stretchable electronics and opens the way to robust, stretchable devices.
Self-aligned photolithography for the fabrication of fully transparent high-voltage devices
NASA Astrophysics Data System (ADS)
Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong
2018-05-01
High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.
Towards substrate engineering of graphene-silicon Schottky diode photodetectors.
Selvi, Hakan; Unsuree, Nawapong; Whittaker, Eric; Halsall, Matthew P; Hill, Ernie W; Thomas, Andrew; Parkinson, Patrick; Echtermeyer, Tim J
2018-02-15
Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 10 6 V W -1 and short rise- and fall-times of tens of nanoseconds.
Microfluidic PMMA interfaces for rectangular glass capillaries
NASA Astrophysics Data System (ADS)
Evander, Mikael; Tenje, Maria
2014-02-01
We present the design and fabrication of a polymeric capillary fluidic interface fabricated by micro-milling. The design enables the use of glass capillaries with any kind of cross-section in complex microfluidic setups. We demonstrate two different designs of the interface; a double-inlet interface for hydrodynamic focusing and a capillary interface with integrated pneumatic valves. Both capillary interfaces are presented together with examples of practical applications. This communication shows the design optimization and presents details of the fabrication process. The capillary interface opens up for the use of complex microfluidic systems in single-use glass capillaries. They also enable simple fabrication of glass/polymer hybrid devices that can be beneficial in many research fields where a pure polymer chip negatively affects the device's performance, e.g. acoustofluidics.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Young Tack, E-mail: 023273@kist.re.kr, E-mail: stunalren@gmail.com; Choi, Won Kook; Materials and Life Science Research Division, Korea Institute of Science and Technology
We report on a chemical free one-off imprinting method to fabricate two dimensional (2D) van der Waals (vdWs) materials based transistors. Such one-off imprinting technique is the simplest and effective way to prevent unintentional chemical reaction or damage of 2D vdWs active channel during device fabrication process. 2D MoS{sub 2} nanosheets based transistors with a hexagonal-boron-nitride (h-BN) passivation layer, prepared by one-off imprinting, show negligible variations of transfer characteristics after chemical vapor deposition process. In addition, this method enables the fabrication of all 2D MoS{sub 2} transistors consisting of h-BN gate insulator, and graphene source/drain and gate electrodes without anymore » chemical damage.« less
On the design and fabrication of nanostructures and devices
NASA Astrophysics Data System (ADS)
Wei, Wei
Nanotechnology is emerging into a new frontier in science and technology with potential impact on every aspect of human life. One of the major breakthroughs in today's nanotechnology is the discovery and preparation of new classes of nanomaterials and nanostructures. A large number of nanomaterials and nanostructures are synthesized and characterized with either new or profoundly enhanced properties or phenomena. However, there are several major challenges ahead need to be overcome before any substantial benefits can be brought to the market. One of the challenges that we need to address today is how to effectively integrate useful nanomaterials and nanostrucrures into functional devices and systems. Our mother nature gives us a classic example of how living organisms are built. Starting from a single cell, through its division and growth, it can self-assemble and become functional tissues and organs. Similar self-assemble approach has been adopted as a nano-fabrication technique to assemble nanomaterials and nanostructures into functional nanodevices. This technique has advantages of high precision and nanometer scale resolution. However, it requires a lot of effort to construct a single device and since the properties of individual nanostructures can be different, the fabricated devices may have different properties. In this dissertation, we design and fabricate nanostructures and devices using novel microfabrication techniques. In the first part of the dissertation, the design and fabrication of a variety of nanostructures, such as metal nanowires array, polymer nanowells, and nanostructured surfaces are discussed. In the second part, carbon nanotubes as a novel material has been explored as an example to demonstrate the integration of nanomaterials with novel microfabrication techniques to form a functional device. First, a resistive heating technique is developed to grow carbon nanotubes in localized regions, such as a nichrome heating coil. Then, MEMS micro-heating structures are designed for patterned carbon nanotubes film growth. At last, a MEMS sensor device using in-situ grown carbon nanotubes film as a sensing element is developed. The sensor shows sensitivity to hydrogen gas down to 100 ppm. A hypothetic model based on contact resistance modulation is presented to explain the observed sensing properties.
Mid-IR colloidal quantum dot detectors enhanced by optical nano-antennas
NASA Astrophysics Data System (ADS)
Yifat, Yuval; Ackerman, Matthew; Guyot-Sionnest, Philippe
2017-01-01
We report the fabrication of a colloidal quantum dot based photodetector designed for the 3-5 μm mid infrared wavelength range incorporated with optical nano-antenna arrays to enhance the photocurrent. The fabricated arrays exhibit a resonant behavior dependent on the length of the nano-antenna rods, in good agreement with numerical simulation. The device exhibits a three-fold increase in the spectral photoresponse compared to a photodetector device without antennas, and the resonance is polarized parallel to the antenna orientation. We numerically estimate the device quantum efficiency and investigate its bias dependence.
A micro alkaline direct ethanol fuel cell with platinum-free catalysts
NASA Astrophysics Data System (ADS)
Verjulio, R. W.; Alcaide, F.; Álvarez, G.; Sabaté, N.; Torres-Herrero, N.; Esquivel, J. P.; Santander, J.
2013-11-01
This paper presents the fabrication and characterization of a micro alkaline direct ethanol fuel cell. The device has been conceived as a feasibility demonstrator, using microtechnologies for the fabrication of the current collectors and traditional techniques for the membrane electrode assembly production. The fuel cell works in passive mode, as expected for the simplicity required for micro power systems. Non-noble catalysts have been used in order to implement the main advantage of alkaline systems, showing the feasibility of such a device as a potential very-low-cost power device at mini- and micro scales.
Three-dimensional wax patterning of paper fluidic devices.
Renault, Christophe; Koehne, Jessica; Ricco, Antonio J; Crooks, Richard M
2014-06-17
In this paper we describe a method for three-dimensional wax patterning of microfluidic paper-based analytical devices (μPADs). The method is rooted in the fundamental details of wax transport in paper and provides a simple way to fabricate complex channel architectures such as hemichannels and fully enclosed channels. We show that three-dimensional μPADs can be fabricated with half as much paper by using hemichannels rather than ordinary open channels. We also provide evidence that fully enclosed channels are efficiently isolated from the exterior environment, decreasing contamination risks, simplifying the handling of the device, and slowing evaporation of solvents.
Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi
2015-01-01
This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759
Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions
NASA Astrophysics Data System (ADS)
Pringle, Spencer Allen
HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any appropriate systems.
Uncooled infrared photodetectors in Poland
NASA Astrophysics Data System (ADS)
Piotrowski, J.; Piotrowski, A.
2006-03-01
The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.
Glass-fiber-based neutron detectors for high- and low-flux environments
NASA Astrophysics Data System (ADS)
Bliss, Mary; Brodzinski, Ronald L.; Craig, Richard A.; Geelhood, Bruce D.; Knopf, Michael A.; Miley, Harry S.; Perkins, Richard W.; Reeder, Paul L.; Sunberg, Debra S.; Warner, Ray A.; Wogman, Ned A.
1995-09-01
Pacific Northwest Laboratory (PNL) has fabricated cerium-activated lithium silicate scintillating fibers via a hot-downdraw process. These fibers typically have a operational transmission length (e(superscript -1) length) of greater than 2 meters. This permits the fabrication of devices which were not possible to consider. Scintillating fibers permit conformable devices, large-area devices, and extremely small devices; in addition, as the thermal-neutron sensitive elements in a fast neutron detection system, scintillating fibers can be dispersed within moderator, improving neutron economy, over that possible with commercially available (superscript 3)He or BF(subscript 3) proportional counters. These fibers can be used for national-security applications, in medical applications, in the nuclear-power industry, and for personnel protection at experimental facilities. Data are presented for devices based on single fibers and devices made up of ribbons containing many fibers under high-and low-flux conditions.
A graphene integrated highly transparent resistive switching memory device
NASA Astrophysics Data System (ADS)
Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.
2018-05-01
We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (<±1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of ˜5 × 103. We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.
Ghezzi, Diego; Vazquez, Rebeca Martinez; Osellame, Roberto; Valtorta, Flavia; Pedrocchi, Alessandra; Valle, Giuseppe Della; Ramponi, Roberta; Ferrigno, Giancarlo; Cerullo, Giulio
2008-10-23
Flash photolysis of caged compounds is one of the most powerful approaches to investigate the dynamic response of living cells. Monolithically integrated devices suitable for optical uncaging are in great demand since they greatly simplify the experiments and allow their automation. Here we demonstrate the fabrication of an integrated bio-photonic device for the optical release of caged compounds. Such a device is fabricated using femtosecond laser micromachining of a glass substrate. More in detail, femtosecond lasers are used both to cut the substrate in order to create a pit for cell growth and to inscribe optical waveguides for spatially selective uncaging of the compounds present in the culture medium. The operation of this monolithic bio-photonic device is tested using both free and caged fluorescent compounds to probe its capability of multipoint release and optical sensing. Application of this device to the study of neuronal network activity can be envisaged.
Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures.
Abhijith, T; Kumar, T V Arun; Reddy, V S
2017-03-03
Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO 3 ) between two tris-(8-hydroxyquinoline)aluminum (Alq 3 ) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 3 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO 3 layer thickness and its location in the Alq 3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO 3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.
Open-source, community-driven microfluidics with Metafluidics.
Kong, David S; Thorsen, Todd A; Babb, Jonathan; Wick, Scott T; Gam, Jeremy J; Weiss, Ron; Carr, Peter A
2017-06-07
Microfluidic devices have the potential to automate and miniaturize biological experiments, but open-source sharing of device designs has lagged behind sharing of other resources such as software. Synthetic biologists have used microfluidics for DNA assembly, cell-free expression, and cell culture, but a combination of expense, device complexity, and reliance on custom set-ups hampers their widespread adoption. We present Metafluidics, an open-source, community-driven repository that hosts digital design files, assembly specifications, and open-source software to enable users to build, configure, and operate a microfluidic device. We use Metafluidics to share designs and fabrication instructions for both a microfluidic ring-mixer device and a 32-channel tabletop microfluidic controller. This device and controller are applied to build genetic circuits using standard DNA assembly methods including ligation, Gateway, Gibson, and Golden Gate. Metafluidics is intended to enable a broad community of engineers, DIY enthusiasts, and other nontraditional participants with limited fabrication skills to contribute to microfluidic research.
Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures
NASA Astrophysics Data System (ADS)
Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.
2017-03-01
Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.
Cotton-textile-enabled flexible self-sustaining power packs via roll-to-roll fabrication
Gao, Zan; Bumgardner, Clifton; Song, Ningning; Zhang, Yunya; Li, Jingjing; Li, Xiaodong
2016-01-01
With rising energy concerns, efficient energy conversion and storage devices are required to provide a sustainable, green energy supply. Solar cells hold promise as energy conversion devices due to their utilization of readily accessible solar energy; however, the output of solar cells can be non-continuous and unstable. Therefore, it is necessary to combine solar cells with compatible energy storage devices to realize a stable power supply. To this end, supercapacitors, highly efficient energy storage devices, can be integrated with solar cells to mitigate the power fluctuations. Here, we report on the development of a solar cell-supercapacitor hybrid device as a solution to this energy requirement. A high-performance, cotton-textile-enabled asymmetric supercapacitor is integrated with a flexible solar cell via a scalable roll-to-roll manufacturing approach to fabricate a self-sustaining power pack, demonstrating its potential to continuously power future electronic devices. PMID:27189776
3D printed microfluidics for biological applications.
Ho, Chee Meng Benjamin; Ng, Sum Huan; Li, King Ho Holden; Yoon, Yong-Jin
2015-01-01
The term "Lab-on-a-Chip," is synonymous with describing microfluidic devices with biomedical applications. Even though microfluidics have been developing rapidly over the past decade, the uptake rate in biological research has been slow. This could be due to the tedious process of fabricating a chip and the absence of a "killer application" that would outperform existing traditional methods. In recent years, three dimensional (3D) printing has been drawing much interest from the research community. It has the ability to make complex structures with high resolution. Moreover, the fast building time and ease of learning has simplified the fabrication process of microfluidic devices to a single step. This could possibly aid the field of microfluidics in finding its "killer application" that will lead to its acceptance by researchers, especially in the biomedical field. In this paper, a review is carried out of how 3D printing helps to improve the fabrication of microfluidic devices, the 3D printing technologies currently used for fabrication and the future of 3D printing in the field of microfluidics.
Meso scale MEMS inertial switch fabricated using an electroplated metal-on-insulator process
NASA Astrophysics Data System (ADS)
Gerson, Y.; Schreiber, D.; Grau, H.; Krylov, S.
2014-02-01
In this work, we report on a novel simple yet robust two-mask metal-on-insulator (MOI) process and illustrate its implementation for the fabrication of a meso scale MEMS inertial switch. The devices were fabricated of a ˜40 µm thick layer of nickel electrodeposited on top of a 4 µm thick thermal field oxide (TOX) covering a single crystal silicon wafer. A 40 µm thick layer of KMPR® resist was used as a mold and allowed the formation of high-aspect-ratio (1:5) metal structures. The devices were released by the sacrificial etching of the TOX layer in hydrofluoric acid. The fabricated devices were mounted in a ceramic enclosure and were characterized using both an electromagnet shaker and a drop tester. The functionality of the switch, aimed to trigger an electrical circuit when subjected to an acceleration pulse with amplitude of 300 g and duration of 200 µs, was demonstrated experimentally and the performance targets were achieved. The experimental results were consistent with the model predictions obtained through finite element simulations.
Kabra, Vinay; Aamir, Lubna; Malik, M M
2014-01-01
A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effect of UV illumination on the I-V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.
NASA Astrophysics Data System (ADS)
Jiang, Ming-Hui; Wang, Xi-Bin; Xu, Qiang; Li, Ming; Niu, Dong-Hai; Sun, Xiao-Qiang; Wang, Fei; Li, Zhi-Yong; Zhang, Da-Ming
2018-01-01
Nonlinear optical (NLO) polymer is a promising material for active waveguide devices that can provide large bandwidth and high-speed response time. However, the performance of the active devices is not only related to the waveguide materials, but also related to the waveguide and electrode structures. In this paper, a high-speed Mach-Zehnder interferometer (MZI) type of electro-optic (EO) switch based on NLO polymer-clad waveguide was fabricated. The quasi-in-plane coplanar waveguide electrodes were also introduced to enhance the poling and modulating efficiency. The characteristic parameters of the waveguide and electrode were carefully designed and simulated. The switches were fabricated by the conventional micro-fabrication process. Under 1550-nm operating wavelength, a typical fabricated switch showed a low insertion loss of 10.2 dB, and the switching rise time and fall time were 55.58 and 57.98 ns, respectively. The proposed waveguide and electrode structures could be developed into other active EO devices and also used as the component in the polymer-based large-scale photonic integrated circuit.
Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan
2014-01-01
A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM0 mode into the TE1 mode, which will output as the TE0 mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < −17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology. PMID:25402029
Wang, Jing; Qi, Minghao; Xuan, Yi; Huang, Haiyang; Li, You; Li, Ming; Chen, Xin; Jia, Qi; Sheng, Zhen; Wu, Aimin; Li, Wei; Wang, Xi; Zou, Shichang; Gan, Fuwan
2014-11-17
A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into the TE(1) mode, which will output as the TE(0) mode after processed by the subsequent MMI mode converter, 90-degree phase shifter (PS) and MMI 3 dB coupler. The numerical simulation results show that the proposed device has a < 0.5 dB insertion loss with < -17 dB crosstalk in C optical communication band. Fabrication tolerance analysis is also performed with respect to the deviations of MMI coupler width, PS width, slab height and upper-cladding refractive index, showing that this device could work well even when affected by considerable fabrication errors. With such a robust performance with a large bandwidth, this device offers potential applications for CMOS-compatible polarization diversity, especially in the booming 100 Gb/s coherent optical communications based on silicon photonics technology.
NASA Astrophysics Data System (ADS)
Summitt, Christopher Ryan
The use of optical interconnects is a promising solution to the increasing demand for high speed mass data transmission used in integrated circuits as well as device to device data transfer applications. For the purpose, low cost polymer waveguides are a popular choice for routing signal between devices due to their compatibility with printed circuit boards. In optical interconnect, coupling from an external light source to such waveguides is a critical step, thus a variety of couplers have been investigated such as grating based couplers [1,2], evanescent couplers [3], and embedded mirrors [4-6]. These couplers are inherently micro-optical components which require fast and scalable fabrication for mass production with optical quality surfaces/structures. Low NA laser direct writing has been used for fast fabrication of structures such as gratings and Fresnel lenses using a linear laser direct writing scheme, though the length scale of such structures are an order of magnitude larger than the spot size of the focused laser of the tool. Nonlinear writing techniques such as with 2-photon absorption offer increased write resolution which makes it possible to fabricate sub-wavelength structures as well as having a flexibility in feature shape. However it does not allow a high speed fabrication and in general are not scalable due to limitations of speed and area induced by the tool's high NA optics. To overcome such limitations primarily imposed by NA, we propose a new micro-optic fabrication process which extends the capabilities of 1D, low NA, and thus fast and scalable, laser direct writing to fabricate a structure having a length scale close to the tool's spot size, for example, a mirror based and 45 degree optical coupler with optical surface quality. The newly developed process allows a high speed fabrication with a write speed of 2600 mm²/min by incorporating a mask based lithography method providing a blank structure which is critical to creating a 45 degree slope to form the coupler surface. In this method, instead of using an entire exposure in a pixelated manner, only a portion of the Gaussian profile is used, allowing a reduced surface roughness and better control of the surface shape than previously possible with this low NA beam. The surface figure of the mirror is well controlled below 0.04 waves in root-mean-square (RMS) at 1.55 mum wavelength, with mirror angle of 45+/-1 degrees. The coupling efficiency is evaluated using a set of polymer waveguides fabricated on the same substrate as the complete proof of concept device. Device insertion loss was measured using a custom built optical test station and a detailed loss analysis was completed to characterize the optical coupling efficiency of the mirror. Surface roughness and angle were also experimentally confirmed. This process opens up a pathway towards large volume fabrication of free-form and high aspect ratio optical components which have not yet pursued, along with well-defined optical structures on a single substrate. In this dissertation, in Chapter 1, we provide an overview of optical surface fabrication in conjunction with current state of the art on fabrication of free form surfaces in macro and microscopic length scale. The need for optical interconnects is introduced and fabrication methods of micro-optical couplers are reviewed in Chapter 2. In Chapter 3, the complete fabrication process of a mirror based coupler is presented including a custom alignment procedure. In Chapter 4, we provide the integration procedure of the optical couplers with waveguides. In Chapter 5, the alignment of two-lithographic methods is discussed. In Chapter 6, we provide the fabrication procedure used for the waveguides. In Chapter 7, the experimental evaluation and testing of the optical coupler is described. We present a custom test station used for angle verification and optical coupler efficiency measurement. In Chapter 8, a detailed loss analysis of the device is presented including suggestions for future reductions in loss. Conclusions and future work considerations are addressed in Chapter 9.
Transferable and flexible thin film devices for engineering applications
NASA Astrophysics Data System (ADS)
Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun
2014-05-01
Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.
Comparison of CIGS solar cells made with different structures and fabrication techniques
Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.; ...
2016-11-03
Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less
Comparison of CIGS solar cells made with different structures and fabrication techniques
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mansfield, Lorelle M.; Garris, Rebekah L.; Counts, Kahl D.
Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps occurring in those with metal-precursor absorber processes. Devices with Zn(O, S) or thin CdS buffers had quantum efficiencies above 90% down to 400 nm. Most voltages were 250-300 mV below the Shockley-Queisser limit for their bandgap. Electroluminescence intensity tracked well with the respective voltage deficits. Fill factor (FF) was as high as 95% of the maximum for each device'smore » respective current and voltage, with higher FF corresponding to lower diode quality factors (~1.3). An in-depth analysis of FF losses determined that diode quality reflected in the quality factor, voltage-dependent photocurrent, and, to a lesser extent, the parasitic resistances are the limiting factors. As a result, different absorber processes and device structures led to a range of electrical and physical characteristics, yet this investigation showed that multiple fabrication pathways could lead to high-quality and high-efficiency solar cells.« less
Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S.; Desai, Dhruv K.; Rodgers, Griffin F.; Bradley, Aaron J.; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F.
2015-01-01
Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene’s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene’s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices. PMID:26273961
GaN light-emitting device based on ionic liquid electrolyte
NASA Astrophysics Data System (ADS)
Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi
2018-06-01
Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.
Watanabe, Satoshi; Fukuchi, Yasumasa; Fukasawa, Masako; Sassa, Takafumi; Kimoto, Atsushi; Tajima, Yusuke; Uchiyama, Masanobu; Yamashita, Takashi; Matsumoto, Mutsuyoshi; Aoyama, Tetsuya
2014-02-12
Here, we discuss the local photovoltaic characteristics of a structured bulk heterojunction, organic photovoltaic devices fabricated with a liquid carbazole, and a fullerene derivative based on analysis by scanning kelvin probe force microscopy (KPFM). Periodic photopolymerization induced by an interference pattern from two laser beams formed surface relief gratings (SRG) in the structured films. The surface potential distribution in the SRGs indicates the formation of donor and acceptor spatial distribution. Under illumination, the surface potential reversibly changed because of the generation of fullerene anions and hole transport from the films to substrates, which indicates that we successfully imaged the local photovoltaic characteristics of the structured photovoltaic devices. Using atomic force microscopy, we confirmed the formation of the SRG because of the material migration to the photopolymerized region of the films, which was induced by light exposure through photomasks. The structuring technique allows for the direct fabrication and the control of donor and acceptor spatial distribution in organic photonic and electronic devices with minimized material consumption. This in situ KPFM technique is indispensable to the fabrication of nanoscale electron donor and electron acceptor spatial distribution in the devices.
MEMS piezoresistive cantilever for the direct measurement of cardiomyocyte contractile force
NASA Astrophysics Data System (ADS)
Matsudaira, Kenei; Nguyen, Thanh-Vinh; Hirayama Shoji, Kayoko; Tsukagoshi, Takuya; Takahata, Tomoyuki; Shimoyama, Isao
2017-10-01
This paper reports on a method to directly measure the contractile forces of cardiomyocytes using MEMS (micro electro mechanical systems)-based force sensors. The fabricated sensor chip consists of piezoresistive cantilevers that can measure contractile forces with high frequency (several tens of kHz) and high sensing resolution (less than 0.1 nN). Moreover, the proposed method does not require a complex observation system or image processing, which are necessary in conventional optical-based methods. This paper describes the design, fabrication, and evaluation of the proposed device and demonstrates the direct measurements of contractile forces of cardiomyocytes using the fabricated device.
21 CFR 886.1905 - Nystagmus tape.
Code of Federal Regulations, 2010 CFR
2010-04-01
... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES OPHTHALMIC DEVICES Diagnostic Devices § 886.1905 Nystagmus tape. (a) Identification. Nystagmus tape is a device that is a long, narrow strip of fabric or other flexible material on which a series of objects are...
Campanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber
Calafiore, Giuseppe; Koshelev, Alexander; Darlington, Thomas P.; ...
2017-05-10
One of the major challenges to the widespread adoption of plasmonic and nano-optical devices in real-life applications is the difficulty to mass-fabricate nano-optical antennas in parallel and reproducible fashion, and the capability to precisely place nanoantennas into devices with nanometer-scale precision. In this study, we present a solution to this challenge using the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical transformers onto the core of an optical fiber in a single step, mimicking the 'campanile' near-field probes. Imprinted probes were fabricated using a custom-built imprinter tool with co-axial alignment capability with sub < 100 nm position accuracy, followedmore » by a metallization step. Scanning electron micrographs confirm high imprint fidelity and precision with a thin residual layer to facilitate efficient optical coupling between the fiber and the imprinted optical transformer. The imprinted optical transformer probe was used in an actual NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads. The calibration scans confirmed that imprinted probes enable sub-diffraction limited imaging with a spatial resolution consistent with the gap size. This novel nano-fabrication approach promises a low-cost, high-throughput, and reproducible manufacturing of advanced nano-optical devices.« less
Campanile Near-Field Probes Fabricated by Nanoimprint Lithography on the Facet of an Optical Fiber
DOE Office of Scientific and Technical Information (OSTI.GOV)
Calafiore, Giuseppe; Koshelev, Alexander; Darlington, Thomas P.
One of the major challenges to the widespread adoption of plasmonic and nano-optical devices in real-life applications is the difficulty to mass-fabricate nano-optical antennas in parallel and reproducible fashion, and the capability to precisely place nanoantennas into devices with nanometer-scale precision. In this study, we present a solution to this challenge using the state-of-the-art ultraviolet nanoimprint lithography (UV-NIL) to fabricate functional optical transformers onto the core of an optical fiber in a single step, mimicking the 'campanile' near-field probes. Imprinted probes were fabricated using a custom-built imprinter tool with co-axial alignment capability with sub < 100 nm position accuracy, followedmore » by a metallization step. Scanning electron micrographs confirm high imprint fidelity and precision with a thin residual layer to facilitate efficient optical coupling between the fiber and the imprinted optical transformer. The imprinted optical transformer probe was used in an actual NSOM measurement performing hyperspectral photoluminescence mapping of standard fluorescent beads. The calibration scans confirmed that imprinted probes enable sub-diffraction limited imaging with a spatial resolution consistent with the gap size. This novel nano-fabrication approach promises a low-cost, high-throughput, and reproducible manufacturing of advanced nano-optical devices.« less
Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.
Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun
2016-11-01
2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Stirling Microregenerators Fabricated and Tested
NASA Technical Reports Server (NTRS)
Moran, Matthew E.
2004-01-01
A mesoscale Stirling refrigerator patented by the NASA Glenn Research Center is currently under development. This refrigerator has a predicted efficiency of 30 percent of Carnot and potential uses in electronics, sensors, optical and radiofrequency systems, microarrays, and microsystems. The mesoscale Stirling refrigerator is most suited to volume-limited applications that require cooling below the ambient or sink temperature. Primary components of the planar device include two diaphragm actuators that replace the pistons found in traditional-scale Stirling machines and a microregenerator that stores and releases thermal energy to the working gas during the Stirling cycle. Diaphragms are used to eliminate frictional losses and bypass leakage concerns associated with pistons, while permitting reversal of the hot and cold sides of the device during operation to allow precise temperature control. Three candidate microregenerators were fabricated under NASA grants for initial evaluation: two constructed of porous ceramic, which were fabricated by Johns Hopkins Applied Physics Laboratory, and one made of multiple layers of nickel and photoresist, which was fabricated by Polar Thermal Technologies. The candidate regenerators are being tested by Johns Hopkins Applied Physics in a custom piezoelectric-actuated test apparatus designed to produce the Stirling refrigeration cycle. In parallel with the regenerator testing, Johns Hopkins is using deep reactive ion etching to fabricate electrostatically driven, comb-drive diaphragm actuators. These actuators will drive the Stirling cycle in the prototype device. The top photograph shows the porous ceramic microregenerators. Two microregenerators were fabricated with coarse pores and two with fine pores. The bottom photograph shows the test apparatus parts for evaluating the microregenerators, including the layered nickel-and-photoresist regenerator fabricated using LIGA techniques.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne
The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
Wafer-scale fabrication of glass-FEP-glass microfluidic devices for lipid bilayer experiments.
Bomer, Johan G; Prokofyev, Alexander V; van den Berg, Albert; Le Gac, Séverine
2014-12-07
We report a wafer-scale fabrication process for the production of glass-FEP-glass microdevices using UV-curable adhesive (NOA81) as gluing material, which is applied using a novel "spin & roll" approach. Devices are characterized for the uniformity of the gluing layer, presence of glue in the microchannels, and alignment precision. Experiments on lipid bilayers with electrophysiological recordings using a model pore-forming polypeptide are demonstrated.
2014-07-01
Device Fabrication The migration devices were fabricated at the Cornell NanoScale Science and Technology Facility (CNF) using standard lithography ...mutations interfere with tissue-specific genes: lamin mutations may inhibit binding to tissue-specific factors [27] or lead to abnormal gene activation...mutations associated with stri- ated muscle disease can interfere with coupling to SUN proteins [77,78], emerin [59,77], Klaroid (a Drosophila nesprin