Sample records for ultra pure germanium

  1. Synthesis and photoluminescence of ultra-pure germanium nanoparticles

    NASA Astrophysics Data System (ADS)

    Chivas, R.; Yerci, S.; Li, R.; Dal Negro, L.; Morse, T. F.

    2011-09-01

    We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core-shell configuration with highly crystalline core material. Powder X-ray diffraction measurements verify the presence of highly pure, nano-scale germanium with average crystallite size of 30 nm and micro-strain of 0.058%. X-ray photoelectron spectroscopy demonstrates that GeO x ( x ⩽ 2) shells cover the surfaces of the nanoparticles. Under optical excitation, these nanoparticles exhibit two separate emission bands at room temperature: a visible emission at 500 nm with 0.5-1 ns decay times and an intense near-infrared emission at 1575 nm with up to ˜20 μs lifetime.

  2. Ultra-Pure Water and Extremophilic Bacteria interactions with Germanium Surfaces

    NASA Astrophysics Data System (ADS)

    Sah, Vasu R.

    Supported by a consortium of semiconductor industry sponsors, an international "TIE" project among 5 National Science Foundation (NSF) Industry/university Cooperative Research Centers discovered that a particular extremophilic microbe, Pseudomonas syzygii, persists in the UltraPure Water (UPW) supplies of chip fabrication facilities (FABs) and can bio-corrode germanium wafers to produce microbe-encased optically transparent crystals. Considered as potentially functional "biochips", this investigation explored mechanisms for the efficient and deliberate production of such microbe-germania adducts as a step toward later testing of their properties as sensors or switches in bioelectronic or biophotonic circuits. Recirculating UPW (Ultra-Pure Water) and other purified water, laminar-flow loops were developed across 50X20x1mm germanium (Ge) prisms, followed by subsequent examination of the prism surfaces using Multiple Attenuated Internal Reflection InfraRed (MAIR-IR) spectroscopy, Contact Potential measurements, Differential Interference Contrast Light Microscopy (DICLM), Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDS), and Electron Spectroscopy for Chemical Analysis (ESCA; XPS). P. syzygii cultures originally obtained from a working FAB at University of Arizona were successfully grown on R2A minimal nutrient media. They were found to be identical to the microbes in stored UPW from the same facility, such microbes routinely capable of nucleation and entrapment within GeO2 crystals on the Ge flow surfaces. Optimum flow rates and exposure times were 1 ml/minute (3.2 s-1 shear rate) for 4 days at room temperature, producing densest crystal arrays at the prism central zones 2-3 cm from the flow inlets. Other flow rates and exposure times have higher shear rate which induces a different nucleation mechanism and saturation of crystal formation. Nucleation events began with square and circular oxide deposits surrounding active attached bacteria

  3. Neutron-transmutation-doped germanium bolometers

    NASA Technical Reports Server (NTRS)

    Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

    1983-01-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

  4. Germanium: From Its Discovery to SiGe Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premiermore » gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.« less

  5. Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cabrera-Palmer, Belkis; Barton, Paul

    Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detectormore » with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.« less

  6. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    PubMed

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  7. Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

    2015-09-28

    We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

  8. Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

    NASA Astrophysics Data System (ADS)

    Pi-Ho Hu, Vita; Chiu, Pin-Chieh

    2018-04-01

    The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

  9. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

    2016-01-07

    Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

  10. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  11. Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy.

    PubMed

    Vakarin, Vladyslav; Ramírez, Joan Manel; Frigerio, Jacopo; Ballabio, Andrea; Le Roux, Xavier; Liu, Qiankun; Bouville, David; Vivien, Laurent; Isella, Giovanni; Marris-Morini, Delphine

    2017-09-01

    This Letter explores the use of Ge-rich Si 0.2 Ge 0.8 waveguides on graded Si 1-x Ge x substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3 μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si 1-x Ge x waveguides with high germanium concentration.

  12. Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

    NASA Astrophysics Data System (ADS)

    Martineau, F.; Namur, K.; Mallet, J.; Delavoie, F.; Endres, F.; Troyon, M.; Molinari, M.

    2009-11-01

    The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

  13. Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

    PubMed

    Zhang, Lingen; Xu, Zhenming

    2017-01-05

    Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO 2 . The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way. Copyright © 2016. Published by Elsevier B.V.

  14. Low temperature processing of ultra-pure cellulose fibers into nylon 6 and other thermoplastics

    Treesearch

    Rod Jacobson; Dan Caulfield; Karl Sears; John Underwood

    2002-01-01

    The objective of this research was to develop a stable process for compound ultra-pure cellulose fibers into polyamides. This has been a difficult procedure and has taken years of trial and error to understand the viscosity shear heating effects associated with compounding cellulose into high-melting point engineering thermoplastics. The evolution of the low...

  15. Ultra-pure, water-dispersed Au nanoparticles produced by femtosecond laser ablation and fragmentation

    PubMed Central

    Kubiliūtė, Reda; Maximova, Ksenia A; Lajevardipour, Alireza; Yong, Jiawey; Hartley, Jennifer S; Mohsin, Abu SM; Blandin, Pierre; Chon, James WM; Sentis, Marc; Stoddart, Paul R; Kabashin, Andrei; Rotomskis, Ričardas; Clayton, Andrew HA; Juodkazis, Saulius

    2013-01-01

    Aqueous solutions of ultra-pure gold nanoparticles have been prepared by methods of femtosecond laser ablation from a solid target and fragmentation from already formed colloids. Despite the absence of protecting ligands, the solutions could be (1) fairly stable and poly size-dispersed; or (2) very stable and monodispersed, for the two fabrication modalities, respectively. Fluorescence quenching behavior and its intricacies were revealed by fluorescence lifetime imaging microscopy in rhodamine 6G water solution. We show that surface-enhanced Raman scattering of rhodamine 6G on gold nanoparticles can be detected with high fidelity down to micromolar concentrations using the nanoparticles. Application potential of pure gold nanoparticles with polydispersed and nearly monodispersed size distributions are discussed. PMID:23888114

  16. Multiple-step preparation and physicochemical characterization of crystalline α-germanium hydrogenphosphate

    NASA Astrophysics Data System (ADS)

    Romano, Ricardo; Ruiz, Ana I.; Alves, Oswaldo L.

    2004-04-01

    The reaction between germanium oxide and phosphoric acid has previously been described and led to impure germanium hydrogenphosphate samples with low crystallinity. A new multiple-step route involving the same reaction under refluxing and soft hydrothermal conditions is described for the preparation of pure and crystalline α-GeP. The physicochemical characterization of the samples allows accompaniment of the reaction evolution as well as determining short- and long-range structural organization. The phase purity of the α-GeP sample was confirmed by applying Rietveld's profile analysis, which also determined the cell parameters of its crystals.

  17. Decontaminating Solar Wind Samples with the Genesis Ultra-Pure Water Megasonic Wafer Spin Cleaner

    NASA Technical Reports Server (NTRS)

    Calaway, Michael J.; Rodriquez, M. C.; Allton, J. H.; Stansbery, E. K.

    2009-01-01

    The Genesis sample return capsule, though broken during the landing impact, contained most of the shattered ultra-pure solar wind collectors comprised of silicon and other semiconductor wafers materials. Post-flight analysis revealed that all wafer fragments were littered with surface particle contamination from spacecraft debris as well as soil from the impact site. This particulate contamination interferes with some analyses of solar wind. In early 2005, the Genesis science team decided to investigate methods for removing the surface particle contamination prior to solar wind analysis.

  18. Manufacturing and Characterization of Ultra Pure Ferrous Alloys Final Report CRADA No. TC02069.0

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lesuer, D.; McGreevy, T. E.

    This CRADA was a.collaborative effort between the Lawrence Livermore National Security LLC (formerly University of California)/Lawrence Livermore National Laboratory (LLNL),and Caterpillar Inc. (CaterpiHar), to further advance levitation casting techniques (developed at the Central Research Institute for Material (CRIM) in St. Petersburg, Russia) for use in manufacturing high purity metal alloys. This DOE Global Initiatives for Proliferation Prevention Program (IPP) project was to develop and demonstrate the levitation casting technology for producing ultra-pure alloys.

  19. Development of a new type of germanium detector for dark matter searches

    NASA Astrophysics Data System (ADS)

    Wei, Wenzhao

    Monte Carlo simulation is an important tool used to develop a better understanding of important physical processes. This thesis describes three Monte Carlo simulations used to understand germanium detector response to low energy nuclear recoils and radiogenic backgrounds for direct dark matter searches. The first simulation is the verification of Barker-Mei model, a theoretical model for calculating the ionization efficiency for germanium detector for the energy range of 1 - 100 keV. Utilizing the shape analysis, a bin-to-bin comparison between simulation and experimental data was performed for verifying the accuracy of the Barker-Mei model. A percentage difference within 4% was achieved between data and simulation, which showed the validity of the Barker-Mei model. The second simulation is the study of a new type of germanium detector for n/gamma discrimination at 77 K with plasma time difference in pulse shape. Due to the poor time resolution, conventional P-type Point Contact (PPC) and coaxial germanium detectors are not capable of discriminating nuclear recoils from electron recoils. In this thesis, a new idea of using great detector granularity and plasma time difference in pulse shape to discriminate nuclear recoils from electron recoils with planar germanium detectors in strings was discussed. The anticipated sensitivity of this new detector array is shown for detecting dark matter. The last simulation is a study of a new type of germanium-detector array serving as a PMT screening facility for ultra-low background dark matter experiments using noble liquid xenon as detector material such LUX/LZ and XENON100/XENON1T. A well-shaped germanium detector array and a PMT were simulated to study the detector response to the signal and background for a better understanding of the radiogenic gamma rays from PMTs. The detector efficiency and other detector performance were presented in this work.

  20. Germanium and InGaAs/InP SPADs for single-photon detection in the near-infrared

    NASA Astrophysics Data System (ADS)

    Tosi, Alberto; Dalla Mora, Alberto; Zappa, Franco; Cova, Sergio

    2007-09-01

    Single-Photon Avalanche Diodes (SPADs) for near-infrared (800-1700 nm) wavelengths can be manufactured both in InGaAs/InP and in germanium. Recently, new InGaAs/InP SPADs became commercially available with good overall performances, but with the intrinsic bottleneck of strong afterpulsing effect, originated in the InP multiplication layer. At present, germanium technology is not exploited for single-photon detectors, but previous devices demonstrate lower afterpulsing even at very low temperatures and promising dark count rate when employing pure manufacturing process. In this work, we compare germanium and InGaAs/InP SPADs in terms of dark counts, afterpulsing, timing jitter, and quantum efficiency. Eventually, we highlight the motivations for considering germanium as a key material for single-photon counting in the NIR.

  1. Ultra-Low-Cost Room Temperature SiC Thin Films

    NASA Technical Reports Server (NTRS)

    Faur, Maria

    1997-01-01

    The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

  2. Microbiological investigation of an industrial ultra pure supply water plant using cultivation-based and cultivation-independent methods.

    PubMed

    Bohus, Veronika; Tóth, Erika M; Székely, Anna J; Makk, Judit; Baranyi, Krisztián; Patek, Gábor; Schunk, János; Márialigeti, Károly

    2010-12-01

    Ultra pure waters (UPW), characterized by extremely low salt and nutrient concentrations, can suffer from microbial contamination which causes biofouling and biocorrosion, possibly leading to reduced lifetime and increased operational costs. Samples were taken from an ultra pure supply water producing plant of a power plant. Scanning electron microscopic examination was carried out on the biofilms formed in the system. Biofilm, ion exchange resin, and water samples were characterized by culture-based methods and molecular fingerprinting (terminal restriction fragment length polymorphism [T-RFLP] analysis and molecular cloning). Identification of bacteria was based on 16S rDNA sequence comparison. A complex microbial community structure was revealed. Nearly 46% of the clones were related to as yet uncultured bacteria. The community profiles of the water samples were the most diverse and most of bacteria were recruited from bacterial communities of tube surface and ion exchange resin biofilms. Microbiota of different layers of the mixed bed ion exchange resin showed the highest similarity. Most of the identified taxa (dominated by β-Proteobacteria) could take part in microbially influenced corrosion. Copyright © 2010 Elsevier Ltd. All rights reserved.

  3. Germanium detector passivated with hydrogenated amorphous germanium

    DOEpatents

    Hansen, William L.; Haller, Eugene E.

    1986-01-01

    Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

  4. Advanced germanium layer transfer for ultra thin body on insulator structure

    NASA Astrophysics Data System (ADS)

    Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

    2016-12-01

    We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

  5. The MAJORANA DEMONSTRATOR: A search for neutrinoless double-beta decay of germanium-76

    NASA Astrophysics Data System (ADS)

    Schubert, Alexis; Majorana Collaboration

    2011-04-01

    Observation of neutrinoless double-beta decay (0 νββ) could determine whether the neutrino is a Majorana particle and may provide information on neutrino mass. The MAJORANA Collaboration will search for 0 νββ of 76Ge in an array of germanium detectors enriched to 86% in 76Ge. Germanium detectors are a well-understood technology and have the benefits of excellent energy resolution, a high Q-value, and the ability to act as source and detector. The p-type point contact germanium detectors chosen by the MAJORANA Collaboration provide low noise, low energy threshold, and some ability to distinguish between the signal and background events. MAJORANA is constructing the DEMONSTRATOR, which will be used to conduct research and development toward a tonne-scale Ge experiment. The DEMONSTRATOR will be installed deep underground and will contain 40 kg of Ge deployed in an ultra-low-background shielded environment. Research supported by DOE under contracts DE-AC05-00OR22725 and DE-FG02-97ER41020.

  6. Low background materials and fabrication techniques for cables and connectors in the Majorana Demonstrator

    NASA Astrophysics Data System (ADS)

    Busch, M.; Abgrall, N.; Alvis, S. I.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Barton, C. J.; Bertrand, F. E.; Bode, T.; Bradley, A. W.; Brudanin, V.; Buuck, M.; Caldwell, T. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R.; Hehn, L.; Henning, R.; Hoppe, E. W.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Myslik, J.; O'Shaughnessy, C.; Othman, G.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Rielage, K.; Robertson, R. G. H.; Rouf, N. W.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

    2018-01-01

    The Majorana Collaboration is searching for the neutrinoless double-beta decay of the nucleus 76Ge. The Majorana Demonstrator is an array of germanium detectors deployed with the aim of implementing background reduction techniques suitable for a tonne scale 76Ge-based search (the LEGEND collaboration). In the Demonstrator, germanium detectors operate in an ultra-pure vacuum cryostat at 80 K. One special challenge of an ultra-pure environment is to develop reliable cables, connectors, and electronics that do not significantly contribute to the radioactive background of the experiment. This paper highlights the experimental requirements and how these requirements were met for the Majorana Demonstrator, including plans to upgrade the wiring for higher reliability in the summer of 2018. Also described are requirements for LEGEND R&D efforts underway to meet these additional requirements

  7. Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles.

    PubMed

    Gumennik, Alexander; Levy, Etgar C; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

    2017-07-11

    Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

  8. Confined in-fiber solidification and structural control of silicon and silicon−germanium microparticles

    PubMed Central

    Gumennik, Alexander; Levy, Etgar C.; Grena, Benjamin; Hou, Chong; Rein, Michael; Abouraddy, Ayman F.; Joannopoulos, John D.; Fink, Yoel

    2017-01-01

    Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon−germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon−germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices. PMID:28642348

  9. The Germanium Dichotomy in Martian Meteorites

    NASA Technical Reports Server (NTRS)

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  10. Mineral commodity profiles: Germanium

    USGS Publications Warehouse

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  11. Growth Behavior and Electronic Structure of Noble Metal-Doped Germanium Clusters.

    PubMed

    Mahtout, Sofiane; Siouani, Chaouki; Rabilloud, Franck

    2018-01-18

    Structures, energetics, and electronic properties of noble metal-doped germanium (MGe n with M = Cu, Ag, Au; n = 1-19) clusters are systematically investigated by using the density functional theory (DFT) approach. The endohedral structures in which the metal atom is encapsulated inside of a germanium cage appear at n = 10 when the dopant is Cu and n = 12 for M = Ag and Au. While Cu doping enhances the stability of the corresponding germanium frame, the binding energies of AgGe n and AuGe n are always lower than those of pure germanium clusters. Our results highlight the great stability of the CuGe 10 cluster in a D 4d structure and, to a lesser extent, that of AgGe 15 and AuGe 15 , which exhibits a hollow cage-like geometry. The sphere-type geometries obtained for n = 10-15 present a peculiar electronic structure in which the valence electrons of the noble metal and Ge atoms are delocalized and exhibit a shell structure associated with the quasi-spherical geometry. It is found that the coinage metal is able to give both s- and d-type electrons to be reorganized together with the valence electrons of Ge atoms through a pooling of electrons. The cluster size dependence of the stability, the frontier orbital energy gap, the vertical ionization potentials, and electron affinities are given.

  12. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Busch, M.; Abgrall, N.; Alvis, S. I.

    Here, the Majorana Collaboration is searching for the neutrinoless double-beta decay of the nucleus 76Ge. The Majorana Demonstrator is an array of germanium detectors deployed with the aim of implementing background reduction techniques suitable for a tonne scale 76Ge-based search (the LEGEND collaboration). In the Demonstrator, germanium detectors operate in an ultra-pure vacuum cryostat at 80 K. One special challenge of an ultra-pure environment is to develop reliable cables, connectors, and electronics that do not significantly contribute to the radioactive background of the experiment. This paper highlights the experimental requirements and how these requirements were met for the Majorana Demonstrator,more » including plans to upgrade the wiring for higher reliability in the summer of 2018. Also described are requirements for LEGEND R&D efforts underway to meet these additional requirements« less

  13. Low background materials and fabrication techniques for cables and connectors in the Majorana Demonstrator

    DOE PAGES

    Busch, M.; Abgrall, N.; Alvis, S. I.; ...

    2018-01-03

    Here, the Majorana Collaboration is searching for the neutrinoless double-beta decay of the nucleus 76Ge. The Majorana Demonstrator is an array of germanium detectors deployed with the aim of implementing background reduction techniques suitable for a tonne scale 76Ge-based search (the LEGEND collaboration). In the Demonstrator, germanium detectors operate in an ultra-pure vacuum cryostat at 80 K. One special challenge of an ultra-pure environment is to develop reliable cables, connectors, and electronics that do not significantly contribute to the radioactive background of the experiment. This paper highlights the experimental requirements and how these requirements were met for the Majorana Demonstrator,more » including plans to upgrade the wiring for higher reliability in the summer of 2018. Also described are requirements for LEGEND R&D efforts underway to meet these additional requirements« less

  14. Tunable conductivity in mesoporous germanium

    NASA Astrophysics Data System (ADS)

    Beattie, Meghan N.; Bioud, Youcef A.; Hobson, David G.; Boucherif, Abderraouf; Valdivia, Christopher E.; Drouin, Dominique; Arès, Richard; Hinzer, Karin

    2018-05-01

    Germanium-based nanostructures have attracted increasing attention due to favourable electrical and optical properties, which are tunable on the nanoscale. High densities of germanium nanocrystals are synthesized via electrochemical etching, making porous germanium an appealing nanostructured material for a variety of applications. In this work, we have demonstrated highly tunable electrical conductivity in mesoporous germanium layers by conducting a systematic study varying crystallite size using thermal annealing, with experimental conductivities ranging from 0.6 to 33 (×10‑3) Ω‑1 cm‑1. The conductivity of as-prepared mesoporous germanium with 70% porosity and crystallite size between 4 and 10 nm is shown to be ∼0.9 × 10‑3 Ω‑1 cm‑1, 5 orders of magnitude smaller than that of bulk p-type germanium. Thermal annealing for 10 min at 400 °C further reduced the conductivity; however, annealing at 450 °C caused a morphological transformation from columnar crystallites to interconnecting granular crystallites and an increase in conductivity by two orders of magnitude relative to as-prepared mesoporous germanium caused by reduced influence of surface states. We developed an electrostatic model relating the carrier concentration and mobility of p-type mesoporous germanium to the nanoscale morphology. Correlation within an order of magnitude was found between modelled and experimental conductivities, limited by variation in sample uniformity and uncertainty in void size and fraction after annealing. Furthermore, theoretical results suggest that mesoporous germanium conductivity could be tuned over four orders of magnitude, leading to optimized hybrid devices.

  15. Fabricating Germanium Interfaces for Battery Applications

    NASA Astrophysics Data System (ADS)

    Serino, Andrew Clark

    The experimental results presented herein detail the importance of material surfaces in device performance. We have demonstrated this importance by furthering and applying our understanding of germanium surfaces to a number of real-world applications. Pure and stable dispersions of germanane, an "all-surface" form of germanium, were created through solid-state synthesis followed by ultrasonication and centrifugation. These dispersions were used to fabricate germanane-based, high-performance, Li-ion anodes with capacities of ˜1100 mA-h/g, capacity retention over 100 cycles, and Coulombic efficiency of 99%. Additionally, carborane monolayers were self-assembled on Ge(100) and Ge(111) surfaces through carboxylic acid tethers, and found to be capable of tuning the surface work function by ˜0.4 eV without significantly affecting surface wettability. These capabilities are important for increasing device efficiency while minimizing complications associated with processing. Lastly, we introduce the concept of the molecular battery, a possible design using a layer-by-layer deposition approach, and our steps toward its realization. In this pursuit, we explored the assembly of metal-organic coordination of carborane-based linkers, as well as the capabilities of a film of benzene-based linkers (<50 nm) as a Li-ion battery separator using a Ge anode as a tool for analyzing performance.

  16. Portable device for generation of ultra-pure water vapor feeds

    NASA Astrophysics Data System (ADS)

    Velin, P.; Stenman, U.; Skoglundh, M.; Carlsson, P.-A.

    2017-11-01

    A portable device for the generation of co-feeds of water vapor has been designed, constructed, and evaluated for flexible use as an add-on component to laboratory chemical reactors. The vapor is formed by catalytic oxidation of hydrogen, which benefits the formation of well-controlled minute concentrations of ultra-pure water. Analysis of the effluent stream by on-line mass spectrometry and Fourier transform infrared spectroscopy confirms that water vapor can be, with high precision, generated both rapidly and steadily over extended periods in the range of 100 ppm to 3 vol. % (limited by safety considerations) using a total flow of 100 to 1500 ml/min at normal temperature and pressure. Further, the device has been used complementary to a commercial water evaporator and mixing system to span water concentrations up to 12 vol. %. Finally, an operando diffuse reflective infrared Fourier transform spectroscopic measurement of palladium catalysed methane oxidation in the absence and presence of up to 1.0 vol. % water has been carried out to demonstrate the applicability of the device for co-feeding well-controlled low concentrations of water vapor to a common type of spectroscopic experiment. The possibilities of creating isotopically labeled water vapor as well as using tracer gases for dynamic experiments are discussed.

  17. Portable device for generation of ultra-pure water vapor feeds.

    PubMed

    Velin, P; Stenman, U; Skoglundh, M; Carlsson, P-A

    2017-11-01

    A portable device for the generation of co-feeds of water vapor has been designed, constructed, and evaluated for flexible use as an add-on component to laboratory chemical reactors. The vapor is formed by catalytic oxidation of hydrogen, which benefits the formation of well-controlled minute concentrations of ultra-pure water. Analysis of the effluent stream by on-line mass spectrometry and Fourier transform infrared spectroscopy confirms that water vapor can be, with high precision, generated both rapidly and steadily over extended periods in the range of 100 ppm to 3 vol. % (limited by safety considerations) using a total flow of 100 to 1500 ml/min at normal temperature and pressure. Further, the device has been used complementary to a commercial water evaporator and mixing system to span water concentrations up to 12 vol. %. Finally, an operando diffuse reflective infrared Fourier transform spectroscopic measurement of palladium catalysed methane oxidation in the absence and presence of up to 1.0 vol. % water has been carried out to demonstrate the applicability of the device for co-feeding well-controlled low concentrations of water vapor to a common type of spectroscopic experiment. The possibilities of creating isotopically labeled water vapor as well as using tracer gases for dynamic experiments are discussed.

  18. Germanium recycling in the United States in 2000

    USGS Publications Warehouse

    Jorgenson, John D.

    2006-01-01

    This report describes the recycling flow of germanium in the United States in 2000, as well as other germanium material flow streams. Germanium was recycled mostly from new scrap that was generated during the manufacture of germanium-containing fiber optic cables and from new and old scrap products of germanium-containing infrared imaging devices. In 2000, about 11.5 metric tons of germanium was recycled, about 40 percent of which was derived from old scrap. The germanium recycling rate was estimated to be 50 percent, and germanium scrap recycling efficiency, 76 percent.

  19. Quantum ballistic transport in strained epitaxial germanium

    NASA Astrophysics Data System (ADS)

    Gul, Y.; Holmes, S. N.; Newton, P. J.; Ellis, D. J. P.; Morrison, C.; Pepper, M.; Barnes, C. H. W.; Myronov, M.

    2017-12-01

    Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.

  20. Non-local electrical spin injection and detection in germanium at room temperature

    NASA Astrophysics Data System (ADS)

    Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

    2017-10-01

    Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

  1. Germanium and indium

    USGS Publications Warehouse

    Shanks, W.C. Pat; Kimball, Bryn E.; Tolcin, Amy C.; Guberman, David E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

    2017-12-19

    Germanium and indium are two important elements used in electronics devices, flat-panel display screens, light-emitting diodes, night vision devices, optical fiber, optical lens systems, and solar power arrays. Germanium and indium are treated together in this chapter because they have similar technological uses and because both are recovered as byproducts, mainly from copper and zinc sulfides.The world’s total production of germanium in 2011 was estimated to be 118 metric tons. This total comprised germanium recovered from zinc concentrates, from fly ash residues from coal burning, and from recycled material. Worldwide, primary germanium was recovered in Canada from zinc concentrates shipped from the United States; in China from zinc residues and coal from multiple sources in China and elsewhere; in Finland from zinc concentrates from the Democratic Republic of the Congo; and in Russia from coal.World production of indium metal was estimated to be about 723 metric tons in 2011; more than one-half of the total was produced in China. Other leading producers included Belgium, Canada, Japan, and the Republic of Korea. These five countries accounted for nearly 95 percent of primary indium production.Deposit types that contain significant amounts of germanium include volcanogenic massive sulfide (VMS) deposits, sedimentary exhalative (SEDEX) deposits, Mississippi Valley-type (MVT) lead-zinc deposits (including Irish-type zinc-lead deposits), Kipushi-type zinc-lead-copper replacement bodies in carbonate rocks, and coal deposits.More than one-half of the byproduct indium in the world is produced in southern China from VMS and SEDEX deposits, and much of the remainder is produced from zinc concentrates from MVT deposits. The Laochang deposit in Yunnan Province, China, and the VMS deposits of the Murchison greenstone belt in Limpopo Province, South Africa, provide excellent examples of indium-enriched deposits. The SEDEX deposits at Bainiuchang, China (located in

  2. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Guberman, David

    2010-01-01

    The article provides information on germanium, an element with electrical properties between those of a metal and an insulator. Applications of germanium include its use as a component of the glass in fiber-optic cable, in infrared optics devices and as a semiconductor and substrate used in electronic and solar applications. Germanium was first isolated by German chemist Clemens Winkler in 1886 and was named after Winkler's native country. In 2008, the leading sources of primary germanium from coal or zinc include Canada, China and Russia.

  3. Vapor pressure of germanium precursors

    NASA Astrophysics Data System (ADS)

    Pangrác, J.; Fulem, M.; Hulicius, E.; Melichar, K.; Šimeček, T.; Růžička, K.; Morávek, P.; Růžička, V.; Rushworth, S. A.

    2008-11-01

    The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH 3) 4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC 2H 5) 4, CASRN 14165-55-0) was determined using a static method in the temperature range 259-303 K. The experimental vapor pressure data were fit with the Antoine equation. The mass spectra before and after degassing by vacuum distillation at low temperature are also reported and discussed.

  4. Hydrothermal synthesis of bismuth germanium oxide

    DOEpatents

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  5. MAJORANA Collaboration's experience with germanium detectors

    DOE PAGES

    Mertens, S.; Abgrall, N.; Avignone, F. T.; ...

    2015-05-01

    The goal of the Majorana Demonstrator project is to search for 0νββ decay in 76Ge. Of all candidate isotopes for 0νββ, 76Ge has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0νββ, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC®®. The process from production, to characterization and integration in MAJORANAmore » mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.« less

  6. Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

    NASA Astrophysics Data System (ADS)

    Sigillito, Anthony James

    Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a

  7. Ultra Pure Water Cleaning Baseline Study on NASA JSC Astromaterial Curation Gloveboxes

    NASA Technical Reports Server (NTRS)

    Calaway, Michael J.; Burkett, P. J.; Allton, J. H.; Allen, C. C.

    2013-01-01

    Future sample return missions will require strict protocols and procedures for reducing inorganic and organic contamination in isolation containment systems. In 2012, a baseline study was orchestrated to establish the current state of organic cleanliness in gloveboxes used by NASA JSC astromaterials curation labs [1, 2]. As part of this in-depth organic study, the current curatorial technical support procedure (TSP) 23 was used for cleaning the gloveboxes with ultra pure water (UPW) [3-5]. Particle counts and identification were obtained that could be used as a benchmark for future mission designs that require glovebox decontamination. The UPW baseline study demonstrates that TSP 23 works well for gloveboxes that have been thoroughly degreased. However, TSP 23 could be augmented to provide even better glovebox decontamination. JSC 03243 could be used as a starting point for further investigating optimal cleaning techniques and procedures. DuPont Vertrel XF or other chemical substitutes to replace Freon- 113, mechanical scrubbing, and newer technology could be used to enhance glovebox cleanliness in addition to high purity UPW final rinsing. Future sample return missions will significantly benefit from further cleaning studies to reduce inorganic and organic contamination.

  8. Cytocompatibility evaluation of gum Arabic-coated ultra-pure boron nitride nanotubes on human cells.

    PubMed

    Ciofani, Gianni; Del Turco, Serena; Rocca, Antonella; de Vito, Giuseppe; Cappello, Valentina; Yamaguchi, Maho; Li, Xia; Mazzolai, Barbara; Basta, Giuseppina; Gemmi, Mauro; Piazza, Vincenzo; Golberg, Dmitri; Mattoli, Virgilio

    2014-05-01

    Boron nitride nanotubes (BNNTs) are tubular nanoparticles with a structure analogous to that of carbon nanotubes, but with B and N atoms that completely replace the C atoms. Many favorable results indicate BNNTs as safe nanomaterials; however, important concerns have recently been raised about ultra-pure, long (~10 µm) BNNTs tested on several cell types. Here, we propose additional experiments with the same BNNTs, but shortened (~1.5 µm) with a homogenization/sonication treatment that allows for their dispersion in gum Arabic aqueous solutions. Obtained BNNTs are tested on human endothelial and neuron-like cells with several independent biocompatibility assays. Moreover, for the first time, their strong sum-frequency generation signal is exploited to assess the cellular uptake. Our data demonstrate no toxic effects up to concentrations of 20 µg/ml, once more confirming biosafety of BNNTs, and again highlighting that nanoparticle aspect ratio plays a key role in the biocompatibility evaluation.

  9. Production of pure metals

    NASA Technical Reports Server (NTRS)

    Philipp, W. H.; Marsik, S. J.; May, C. E. (Inventor)

    1974-01-01

    A process for depositing elements by irradiating liquids is reported. Ultra pure elements are precipitated from aqueous solutions or suspensions of compounds. A solution of a salt of a metal to be prepared is irradiated, and the insoluble reaction product settles out. Some chemical compounds may also be prepared in this manner.

  10. Slow Crack Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Salem, Jon

    2016-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A=1.7), it is not as anisotropic as SiC, NiAl, or Cu, as evidence by consistent fracture toughness on the 100, 110, and 111 planes. Germanium does not exhibit significant slow crack growth in distilled water. (n=100). Practical values for engineering design are a fracture toughness of 0.7 MPam and a Weibull modulus of m=6+/-2. For well ground and reasonable handled coupons, fracture strength should be greater than 30 MPa.

  11. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

    PubMed Central

    Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; Cushing, Scott K.; Borja, Lauren J.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

    2017-01-01

    Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (∼30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔEgap,Ge,direct=0.8 eV) and Si0.25Ge0.75 indirect gaps (ΔEgap,Si0.25Ge0.75,indirect=0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution. PMID:28653020

  12. Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

    NASA Astrophysics Data System (ADS)

    Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

    2013-09-01

    Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

  13. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

    DOE PAGES

    Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; ...

    2017-06-06

    Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

  14. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.

    Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

  15. SiGe-on-insulator fabricated via germanium condensation following high-fluence Ge+ ion implantation

    NASA Astrophysics Data System (ADS)

    Anthony, R.; Haddara, Y. M.; Crowe, I. F.; Knights, A. P.

    2017-08-01

    Germanium condensation is demonstrated using a two-step wet oxidation of germanium implanted Silicon-On-Insulator (SOI). Samples of 220 nm thick SOI are implanted with a nominal fluence of 5 × 1016 cm-2 Ge+ at an energy of 33 keV. Primary post-implantation wet oxidation is performed initially at 870 °C for 70 min, with the aim of capping the sample without causing significant dose loss via Ge evaporation through the sample surface. This is followed by a secondary higher temperature wet oxidation at either 900 °C, 1000 °C, or 1080 °C. The germanium retained dose and concentration profile, and the oxide thickness is examined after primary oxidation, and various secondary oxidation times, using Rutherford backscattering analysis. A mixed SiGe oxide is observed to form during the primary oxidation followed by a pure silicon oxide after higher temperature secondary oxidation. The peak germanium concentration, which varies with secondary oxidation condition, is found to range from 43 at. % to 95 at. %, while the FWHM of the Ge profile varies from 13 to 5 nm, respectively. It is also observed that both the diffusion of germanium and the rate of oxidation are enhanced at 870 and 900 °C compared to equilibrium expectations. Transmission electron microscopy of a representative sample with secondary oxidation at 1080 °C for 20 min shows that the SiGe layer is crystalline in nature and seeded from the underlying silicon. Raman spectroscopy is used to determine residual strain in the SiGe region following secondary oxidation. The strain is compressive in nature and increases with Ge concentration to a maximum of approximately 1% in the samples probed. In order to elucidate the physical mechanisms, which govern the implantation-condensation process, we fit the experimental profiles of the samples with a model that uses a modified segregation boundary condition; a modified linear rate constant for the oxidation; and an enhanced diffusion coefficient of germanium where the

  16. Method of fabricating germanium and gallium arsenide devices

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban (Inventor)

    1990-01-01

    A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

  17. Recovery of germanium-68 from irradiated targets

    DOEpatents

    Phillips, Dennis R.; Jamriska, Sr., David J.; Hamilton, Virginia T.

    1993-01-01

    A process for selective separation of germanium-68 from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected from the group consisting of molybdenum, niobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the first resin, adjusting the pH of the second ion-containing solution to within a range of from about 0.7 to about 3.0, adjusting the soluble metal halide concentration in the second ion-containing solution to a level adapted for subsequent separation of germanium, contacting the pH-adjusted, soluble metal halide-containing second ion-containing solution with a dextran-based material whereby germanium ions are separated by the dextran-based material, and recovering the germanium from the dextran-based material, preferably by distillation.

  18. Germanium Based Field-Effect Transistors: Challenges and Opportunities

    PubMed Central

    Goley, Patrick S.; Hudait, Mantu K.

    2014-01-01

    The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed. PMID:28788569

  19. Germanium resistance thermometer calibration at superfluid helium temperatures

    NASA Technical Reports Server (NTRS)

    Mason, F. C.

    1985-01-01

    The rapid increase in resistance of high purity semi-conducting germanium with decreasing temperature in the superfluid helium range of temperatures makes this material highly adaptable as a very sensitive thermometer. Also, a germanium thermometer exhibits a highly reproducible resistance versus temperature characteristic curve upon cycling between liquid helium temperatures and room temperature. These two factors combine to make germanium thermometers ideally suited for measuring temperatures in many cryogenic studies at superfluid helium temperatures. One disadvantage, however, is the relatively high cost of calibrated germanium thermometers. In space helium cryogenic systems, many such thermometers are often required, leading to a high cost for calibrated thermometers. The construction of a thermometer calibration cryostat and probe which will allow for calibrating six germanium thermometers at one time, thus effecting substantial savings in the purchase of thermometers is considered.

  20. Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

    PubMed

    Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-08-29

    Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

  1. Electronic considerations for externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Landis, D. A.; Goulding, F. S.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Malone, D. F.; Pollard, M. J.

    1991-01-01

    The dominant background source for germanium gamma ray detector spectrometers used for some astrophysics observations is internal beta decay. Externally segmented germanium gamma ray coaxial detectors can identify beta decay by localizing the event. Energetic gamma rays interact in the germanium detector by multiple Compton interactions while beta decay is a local process. In order to recognize the difference between gamma rays and beta decay events, the external electrode (outside of detector) is electrically partitioned. The instrumentation of these external segments and the consequence with respect to the spectrometer energy signal is examined.

  2. Front End Spectroscopy ASIC for Germanium Detectors

    NASA Astrophysics Data System (ADS)

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  3. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Jorgenson, John D.

    2003-01-01

    Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

  4. Gate-driven pure spin current in graphene

    NASA Astrophysics Data System (ADS)

    Lin, Xiaoyang; Su, Li; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Zhao, Weisheng; Fert, Albert

    An important challenge of spin current based devices is to realize long-distance transport and efficient manipulation of pure spin current without frequent spin-charge conversions. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of conductivity and spin diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel spin relaxation mechanism results in more appreciable demultiplexing performance, which also implies a feasible strategy to characterize the spin relaxation mechanisms. The unique feature of the pure spin current demultiplexing operation would pave a way for ultra-low power spin logic beyond CMOS. Supported by the NSFC (61627813, 51602013) and the 111 project (B16001).

  5. All-inorganic Germanium nanocrystal films by cationic ligand exchange

    DOE PAGES

    Wheeler, Lance M.; Nichols, Asa W.; Chernomordik, Boris D.; ...

    2016-01-21

    In this study, we introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport inmore » germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.« less

  6. Crystal growth of HVPE-GaN doped with germanium

    NASA Astrophysics Data System (ADS)

    Iwinska, M.; Takekawa, N.; Ivanov, V. Yu.; Amilusik, M.; Kruszewski, P.; Piotrzkowski, R.; Litwin-Staszewska, E.; Lucznik, B.; Fijalkowski, M.; Sochacki, T.; Teisseyre, H.; Murakami, H.; Bockowski, M.

    2017-12-01

    Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results were studied and compared. Influence of different flows of germanium tetrachloride, precursor of germanium, on the grown crystals was investigated. Ammonothermal GaN substrates were used as seeds for crystallization. Structural, electrical, and optical properties of HVPE-GaN doped with germanium are presented and discussed in detail. They were compared to properties of HVPE-GaN doped with silicon and also grown on native seeds of high quality.

  7. Germanium soup

    NASA Astrophysics Data System (ADS)

    Palmer, Troy A.; Alexay, Christopher C.

    2006-05-01

    This paper addresses the variety and impact of dispersive model variations for infrared materials and, in particular, the level to which certain optical designs are affected by this potential variation in germanium. This work offers a method for anticipating and/or minimizing the pitfalls such potential model variations may have on a candidate optical design.

  8. Germanium Resistance Thermometer For Subkelvin Temperatures

    NASA Technical Reports Server (NTRS)

    Castles, Stephen H.

    1993-01-01

    Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

  9. Development of an Ultra-Pure, Carrier-Free 209Po Solution Standard

    PubMed Central

    Collé, R.; Fitzgerald, R. P.; Laureano-Perez, L.

    2015-01-01

    Ultra-pure, carrier-free 209Po solution standards have been prepared and standardized for their massic alpha-particle emission rate. The standards, which will be disseminated by the National Institute of Standards and Technology (NIST) as Standard Reference Material SRM 4326a, have a mean mass of (5.169 ± 0.003) g of a solution of polonium in nominal 2.0 mol▪L−1 HCl (having a solution density of (1.032 ± 0.002) g▪ mL−1 at 20 °C) that are contained in 5 mL, flame-sealed, borosilicate glass ampoules. They are certified to contain a 209Po massic alpha-particle emission rate of (39.01 ± 0.18) s−1▪g−1 as of a reference time of 1200 EST, 01 December 2013. This new standard series replaces SRM 4326 that was issued by NIST in 1994. The standardization was based on 4πα liquid scintillation (LS) spectrometry with two different LS counting systems and under wide variations in measurement and counting source conditions. The methodology for the standardization, with corrections for detection of the low-energy conversion electrons from the delayed 2 keV isomeric state in 205Pb and for the radiations accompanying the small 0.45 % electron-capture branch to 209Bi, involves a unique spectral analysis procedure that is specific for the case of 209Po decay. The entire measurement protocol is similar, but revised and improved from that used for SRM 4326. Spectroscopic impurity analyses revealed that no photon-emitting or alpha-emitting radionuclidic impurities were detected. The most common impurity associated with 209Po is 208Po and the activity ratio of 208Po/209Po was < 10−7. PMID:26958444

  10. Structural Design Parameters for Germanium

    NASA Technical Reports Server (NTRS)

    Salem, Jon; Rogers, Richard; Baker, Eric

    2017-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

  11. Non-local opto-electrical spin injection and detection in germanium at room temperature

    NASA Astrophysics Data System (ADS)

    Jamet, Matthieu; Rortais, Fabien; Zucchetti, Carlo; Ghirardini, Lavinia; Ferrari, Alberto; Vergnaud, Celine; Widiez, Julie; Marty, Alain; Attane, Jean-Philippe; Jaffres, Henri; George, Jean-Marie; Celebrano, Michele; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco; Bottegoni, Federico

    Non-local charge carriers injection/detection schemes lie at the foundation of information manipulation in integrated systems. The next generation electronics may operate on the spin instead of the charge and germanium appears as the best hosting material to develop such spintronics for its compatibility with mainstream silicon technology and long spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin orientation. In this presentation, we demonstrate injection of pure spin currents in Ge, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, by using lithographed nanostructures to diffuse the light and create an in-plane polarized electron spin population. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect across a Pt stripe. Supported by the ANR project SiGeSPIN #ANR-13-BS10-0002 and the CARIPLO project SEARCH-IV (Grant 2013-0623).

  12. Synthesis and evaluation of ultra-pure rare-earth-coped glass for laser refrigeration

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Patterson, Wendy M; Hehlen, Markus P; Epstein, Richard I

    2009-01-01

    Significant progress has been made in synthesizing and characterizing ultra-pure, rare-earth doped ZIBLAN (ZrF{sub 4}-InF{sub 3}BaF{sub 2}-LaF{sub 3}-AlF{sub 3}-NaF) glass capable of laser refrigeration. The glass was produced from fluorides which were purified and subsequently treated with hydrofluoric gas at elevated temperatures to remove impurities before glass formation. Several Yb3 +-doped samples were studied with degrees of purity and composition with successive iterations producing an improved material. We have developed a non-invasive, spectroscopic technique, two band differential luminescence thermometry (TBDLT), to evaluate the intrinsic quality of the ytterbium doped ZIBLAN used for laser cooling experiments. TBDLT measures local temperature changesmore » within an illuminated volume resulting solely from changes in the relative thermal population of the excited state levels. This TBDLT technique utilizes two commercially available band pass filters to select and integrate the 'difference regions' of interest in the luminescence spectra. The goal is to determine the minimum temperature to which the ytterbium sample can cool on the local scale, unphased by surface heating. This temperature where heating and cooling are exactly balanced is the zero crossing temperature (ZCT) and can be used as a measure for the presence of impurities and the overall quality of the laser cooling material. Overall, favorable results were obtained from 1 % Yb3+-doped glass, indicating our glasses are desirable for laser refrigeration.« less

  13. Handheld isotope identification system

    DOEpatents

    Frankle, Christen M [Los Alamos, NM; Becker, John A [Alameda, CA; Cork,; Christopher, P [Pleasant Hill, CA; Madden, Norman W [Livermore, CA

    2007-01-09

    A portable radiation detector using a high-purity germanium crystal as the sensing device. The crystal is fabricated such that it exhibits a length to width ratio greater than 1:1 and is oriented within the detector to receive radiation along the width of said crystal. The crystal is located within a container pressurized with ultra-pure nitrogen, and the container is located within a cryostat under vacuum.

  14. The germination of germanium

    NASA Astrophysics Data System (ADS)

    Burdette, Shawn C.; Thornton, Brett F.

    2018-02-01

    Shawn C. Burdette and Brett F. Thornton explore how germanium developed from a missing element in Mendeleev's periodic table to an enabler for the information age, while retaining a nomenclature oddity.

  15. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    NASA Technical Reports Server (NTRS)

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  16. Thermal stability of simple tetragonal and hexagonal diamond germanium

    DOE PAGES

    Huston, Larissa Q.; Johnson, Brett C.; Haberl, Bianca; ...

    2017-11-07

    Here, exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursormore » materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.« less

  17. Thermal stability of simple tetragonal and hexagonal diamond germanium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huston, Larissa Q.; Johnson, Brett C.; Haberl, Bianca

    Here, exotic phases of germanium, that form under high pressure but persist under ambient conditions, are of technological interest due to their unique optical and electrical properties. The thermal evolution and stability of two of these exotic Ge phases, the simple tetragonal (st12) and hexagonal diamond (hd) phases, are investigated in detail. These metastable phases, formed by high pressure decompression in either a diamond anvil cell or by nanoindentation, are annealed at temperatures ranging from 280 to 320 °C for st12-Ge and 200 to 550 °C for hd-Ge. In both cases, the exotic phases originated from entirely pure Ge precursormore » materials. Raman microspectroscopy is used to monitor the phase changes ex situ following annealing. Our results show that hd-Ge synthesized via a pure form of a-Ge first undergoes a subtle change in structure and then an irreversible phase transformation to dc-Ge with an activation energy of (4.3 ± 0.2) eV at higher temperatures. St12-Ge was found to transform to dc-Ge with an activation energy of (1.44 ± 0.08) eV. Taken together with results from previous studies, this study allows for intriguing comparisons with silicon and suggests promising technological applications.« less

  18. Bottom-up assembly of metallic germanium.

    PubMed

    Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

    2015-08-10

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

  19. Bottom-up assembly of metallic germanium

    NASA Astrophysics Data System (ADS)

    Scappucci, Giordano; Klesse, Wolfgang M.; Yeoh, Lareine A.; Carter, Damien J.; Warschkow, Oliver; Marks, Nigel A.; Jaeger, David L.; Capellini, Giovanni; Simmons, Michelle Y.; Hamilton, Alexander R.

    2015-08-01

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (1019 to 1020 cm-3) low-resistivity (10-4Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

  20. Fluidized Bed Membrane Reactors for Ultra Pure H₂ Production--A Step forward towards Commercialization.

    PubMed

    Helmi, Arash; Fernandez, Ekain; Melendez, Jon; Pacheco Tanaka, David Alfredo; Gallucci, Fausto; van Sint Annaland, Martin

    2016-03-19

    In this research the performance of a fluidized bed membrane reactor for high temperature water gas shift and its long term stability was investigated to provide a proof-of-concept of the new system at lab scale. A demonstration unit with a capacity of 1 Nm³/h of ultra-pure H₂ was designed, built and operated over 900 h of continuous work. Firstly, the performance of the membranes were investigated at different inlet gas compositions and at different temperatures and H₂ partial pressure differences. The membranes showed very high H₂ fluxes (3.89 × 10(-6) mol·m(-2)·Pa(-1)·s(-1) at 400 °C and 1 atm pressure difference) with a H₂/N₂ ideal perm-selectivity (up to 21,000 when integrating five membranes in the module) beyond the DOE 2015 targets. Monitoring the performance of the membranes and the reactor confirmed a very stable performance of the unit for continuous high temperature water gas shift under bubbling fluidization conditions. Several experiments were carried out at different temperatures, pressures and various inlet compositions to determine the optimum operating window for the reactor. The obtained results showed high hydrogen recovery factors, and very low CO concentrations at the permeate side (in average <10 ppm), so that the produced hydrogen can be directly fed to a low temperature PEM fuel cell.

  1. Direct measurement of AC electrokinetics properties and capture frequencies of silicon and silicon-germanium nanowires

    NASA Astrophysics Data System (ADS)

    Merhej, M.; Honegger, T.; Bassani, F.; Baron, T.; Peyrade, D.; Drouin, D.; Salem, B.

    2018-01-01

    The assembly of semiconductor nanowires with nanoscale precision is crucial for their integration into functional systems. In this work, we propose a novel method to experimentally determine the real part of the Clausius-Mossotti factor (CMF) of silicon and silicon-germanium nanowires. The quantification of this CMF is measured with the nanowires velocities in a pure dielectrophoretic regime. This approach combined with a study on the connected nanowires alignment yield has led to a frequency of capture evaluation. In addition, we have also presented the morphology of nanowires assembly using dielectrophoresis for a wide frequency variation of AC electric fields.

  2. Gate-Driven Pure Spin Current in Graphene

    NASA Astrophysics Data System (ADS)

    Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

    2017-09-01

    The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

  3. Measurement of trace impurities in ultra pure hydrogen and deuterium at the parts-per-billion level using gas chromatography

    NASA Astrophysics Data System (ADS)

    Ganzha, V.; Ivshin, K.; Kammel, P.; Kravchenko, P.; Kravtsov, P.; Petitjean, C.; Trofimov, V.; Vasilyev, A.; Vorobyov, A.; Vznuzdaev, M.; Wauters, F.

    2018-02-01

    A series of muon experiments at the Paul Scherrer Institute in Switzerland deploy ultra-pure hydrogen active targets. A new gas impurity analysis technique was developed, based on conventional gas chromatography, with the capability to measure part-per-billion (ppb) traces of nitrogen and oxygen in hydrogen and deuterium. Key ingredients are a cryogenic admixture accumulation, a directly connected sampling system and a dedicated calibration setup. The dependence of the measured concentration on the sample volume was investigated, confirming that all impurities from the sample gas are collected in the accumulation column and measured with the gas chromatograph. The system was calibrated utilizing dynamic dilution of admixtures into the gas flow down to sub-ppb level concentrations. The total amount of impurities accumulated in the purification system during a three month long experimental run was measured and agreed well with the calculated amount based on the measured concentrations in the flow.

  4. Near-infrared emission from mesoporous crystalline germanium

    NASA Astrophysics Data System (ADS)

    Boucherif, Abderraouf; Korinek, Andreas; Aimez, Vincent; Arès, Richard

    2014-10-01

    Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

  5. Modeling of dislocation dynamics in germanium Czochralski growth

    NASA Astrophysics Data System (ADS)

    Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

    2017-06-01

    Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

  6. Crucible-free pulling of germanium crystals

    NASA Astrophysics Data System (ADS)

    Wünscher, Michael; Lüdge, Anke; Riemann, Helge

    2011-03-01

    Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient. Under these conditions, the screw-like growth could be avoided. Unfortunately, the helium cooling deteriorates the melting behavior of the feed rod. Spikes appear along the open melt front, which touch on the induction coil. In order to improve the melting behavior, we used a lamp as a second energy source as well as a mixture of Ar and He. With this, we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace. The experimental work is accompanied by the simulation of the stationary temperature field. The commercially available software FEMAG-FZ is used for axisymmetric calculations. Another tool for process development is the lateral photo-voltage scanning (LPS), which can determine the shape of the solid-liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal. In addition to improvements of the process, these measurements can be compared with the calculated results and, hence, conduce to validate the calculation.

  7. Low-temperature irradiation-induced defects in germanium: In situ analysis

    NASA Astrophysics Data System (ADS)

    Mesli, A.; Dobaczewski, L.; Nielsen, K. Bonde; Kolkovsky, Vl.; Petersen, M. Christian; Larsen, A. Nylandsted

    2008-10-01

    The electronic properties of defects resulting from electron irradiation of germanium at low temperatures have been investigated. The recent success in preparing n+p junctions on germanium has opened a new opportunity to address fundamental questions regarding point defects and their related energy levels by allowing an access to the lower half of the band gap. In this work we apply various space-charge capacitance-transient spectroscopy techniques connected on line with the electron-beam facility. In n -type germanium we identify a level at about 0.14 eV below the conduction band whose properties resemble in many respects those of a defect assigned previously to the close vacancy-interstitial or Frenkel pair. This pair seems to annihilate over a small barrier at about 70 K, and its stability is particularly sensitive to the irradiation temperature and energy. We also observe two coupled levels at 0.08 and 0.24 eV below the conduction band stable up to 160 K. Recent independent theoretical work has predicted the existence of the single and double donor of the germanium interstitial with energy levels matching exactly these two values. Given these identifications hold, they mark a major difference with silicon where both the Frenkel pair and self-interstitial have never been caught. In p -type germanium, two levels were found. The shallower one, located at about 0.14 eV above the valence band, is tentatively assigned to the vacancy. It exhibits a field-driven instability at about 80 K making its analysis quite difficult. The application of a reverse bias, required by the space-charge spectroscopy, leads to a strong drift process sweeping this defect out of the observation area without necessarily provoking its annealing. Unlike silicon, in which the vacancy has four charge states, only one vacancy-related level seems to exist in germanium and this level is very likely a double acceptor. Finally, a very peculiar observation is made on a hole midgap trap, which, in

  8. Theoretical requirements for broadband perfect absorption of acoustic waves by ultra-thin elastic meta-films

    PubMed Central

    Duan, Yuetao; Luo, Jie; Wang, Guanghao; Hang, Zhi Hong; Hou, Bo; Li, Jensen; Sheng, Ping; Lai, Yun

    2015-01-01

    We derive and numerically demonstrate that perfect absorption of elastic waves can be achieved in two types of ultra-thin elastic meta-films: one requires a large value of almost pure imaginary effective mass density and a free space boundary, while the other requires a small value of almost pure imaginary effective modulus and a hard wall boundary. When the pure imaginary density or modulus exhibits certain frequency dispersions, the perfect absorption effect becomes broadband, even in the low frequency regime. Through a model analysis, we find that such almost pure imaginary effective mass density with required dispersion for perfect absorption can be achieved by elastic metamaterials with large damping. Our work provides a feasible approach to realize broadband perfect absorption of elastic waves in ultra-thin films. PMID:26184117

  9. Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics.

    PubMed

    Sukhdeo, David S; Nam, Donguk; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-29

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial tensile strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in circular structures patterned within germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into a circular region. Biaxial tensile strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained germanium. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different germanium structures to be independently customized in a single mask process.

  10. Advances in fractal germanium micro/nanoclusters induced by gold: microstructures and properties.

    PubMed

    Chen, Zhiwen; Shek, Chan-Hung; Wu, C M Lawrence; Lai, Joseph K L

    2014-02-01

    Germanium materials are a class of unique semiconductor materials with widespread technological applications because of their valuable semiconducting, electrical, optical, and thermoelectric power properties in the fields of macro/mesoscopic materials and micro/nanodevices. In this review, we describe the efforts toward understanding the microstructures and various properties of the fractal germanium micro/nanoclusters induced by gold prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the integer and non-integer dimensional germanium micro/nanoclusters such as nanoparticles, nanorings, and nanofractals induced by gold and annealing. In particular, the nonlinear electrical behavior of a gold/germanium bilayer film with the interesting nanofractal is discussed in detail. In addition, the third-order optical nonlinearities of the fractal germanium nanocrystals embedded in gold matrix will be summarized by using the sensitive and reliable Z-scan techniques aimed to determine the nonlinear absorption coefficient and nonlinear refractive index. Finally, we emphasize the thermoelectric power properties of the gold/germanium bilayer films. The thermoelectric power measurement is considered to be a more effective method than the conductivity for investigating superlocalization in a percolating system. This research may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices. Once mastered, germanium thin films with a variety of fascinating micro/nanoclusters will offer vast and unforeseen opportunities in the semiconductor industry as well as in other fields of science and technology.

  11. Hydrothermal germanium over the southern East pacific rise.

    PubMed

    Mortlock, R A; Froelich, P N

    1986-01-03

    Germanium enrichment in the oceanic water column above the southern axis of the East Pacific Rise results from hydrothermal solutions emanating from hot springs along the rise crest. This plume signature provides a new oceanic tracer of reactions between seawater and sea floor basalts during hydrothermal alteration. In contrast to the sharp plumes of (3)He and manganese, the germanium plume is broad and diffuse, suggesting the existence of pervasive venting of low-temperature solutions off the ridge axis.

  12. Adhesion and friction behavior of group 4 elements germanium, silicon, tin, and lead

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1975-01-01

    Adhesion and friction studies were conducted with thin films of the group IV elements silicon, germanium, tin, and lead ion plated on the nickel (011) substrate. The mating surface was gold (111). Contacts were made for the elements in the clean state and with oxygen present. Adhesion and friction experiments were conducted at very light loads of 1 to 10 g. Sliding was at a speed of 0.7 mm/min. Friction results indicate that the more covalently bonded elements silicon and germanium exhibit lower adhesion and friction than the more metallic bonded tin and lead. The adhesion of gold to germanium was observed, and recrystallization of the transferred gold occurred. Plastic flow of germanium was seen with sliding. Oxygen reduced, but did not eliminate, the adhesion observed with germanium and silicon.

  13. Influence of Containment on the Growth of Germanium-Silicon in Microgravity

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croll, A.; Sorgenfrei, T.

    2017-01-01

    This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: Float zone growth, Bridgman growth, and Detached Bridgman growth. The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

  14. Variable-Temperature Cryostat For Radiation-Damage Testing Of Germanium Detectors

    NASA Technical Reports Server (NTRS)

    Floyd, Samuel R.; Puc, Bernard P.

    1992-01-01

    Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.

  15. Ultra-pure soft water ameliorates atopic skin disease by preventing metallic soap deposition in NC/Tnd mice and reduces skin dryness in humans.

    PubMed

    Tanaka, Akane; Matsuda, Akira; Jung, Kyungsook; Jang, Hyosun; Ahn, Ginnae; Ishizaka, Saori; Amagai, Yosuke; Oida, Kumiko; Arkwright, Peter D; Matsuda, Hiroshi

    2015-09-01

    Mineral ions in tap water react with fatty acids in soap, leading to the formation of insoluble precipitate (metallic soap) on skin during washing. We hypothesised that metallic soap might negatively alter skin conditions. Application of metallic soap onto the skin of NC/Tnd mice with allergic dermatitis further induced inflammation with elevation of plasma immunoglobulin E and proinflammatory cytokine expression. Pruritus and dryness were ameliorated when the back of mice was washed with soap in Ca2+- and Mg2+-free ultra-pure soft water (UPSW). Washing in UPSW, but not tap water, also protected the skin of healthy volunteers from the soap deposition. Furthermore, 4 weeks of showering with UPSW reduced dryness and pruritus of human subjects with dry skin. Washing with UPSW may be therapeutically beneficial in patients with skin troubles.

  16. Properties of the exotic metastable ST12 germanium allotrope

    PubMed Central

    Zhao, Zhisheng; Zhang, Haidong; Kim, Duck Young; Hu, Wentao; Bullock, Emma S.; Strobel, Timothy A.

    2017-01-01

    The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other ‘exotic' forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P43212) due to experimental limitations in sample preparation and varying theoretical predictions. Here we report clear experimental and theoretical evidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk samples. Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were verified using powder X-ray diffraction, transmission electron microscopy, Raman and wavelength/energy dispersive X-ray spectroscopy. Optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0.74 eV, which is in good agreement with electrical transport measurements and our first-principles calculations. PMID:28045027

  17. Properties of the exotic metastable ST12 germanium allotrope

    DOE PAGES

    Zhao, Zhisheng; Zhang, Haidong; Kim, Duck Young; ...

    2017-01-03

    The optical and electronic properties of semiconducting materials are of great importance to a vast range of contemporary technologies. Diamond-cubic germanium is a well-known semiconductor, although other ‘exotic’ forms may possess distinct properties. In particular, there is currently no consensus for the band gap and electronic structure of ST12-Ge (tP12, P4 32 12) due to experimental limitations in sample preparation and varying theoretical predictions. Here we report clear experimental and theoretical evidence for the intrinsic properties of ST12-Ge, including the first optical measurements on bulk samples. Phase-pure bulk samples of ST12-Ge were synthesized, and the structure and purity were verifiedmore » using powder X-ray diffraction, transmission electron microscopy, Raman and wavelength/energy dispersive X-ray spectroscopy. Lastly, optical measurements indicate that ST12-Ge is a semiconductor with an indirect band gap of 0.59 eV and a direct optical transition at 0.74 eV, which is in good agreement with electrical transport measurements and our first-principles calculations.« less

  18. Multidimensional Germanium-Based Materials as Anodes for Lithium-Ion Batteries.

    PubMed

    Qin, Jinwen; Cao, Minhua

    2016-04-20

    Metallic germanium is an ideal anode for lithium-ion batteries (LIBs), owing to its high theoretical capacity (1624 mA h g(-1) ) and low operating voltage. Herein, we highlight recent advances in the development of Ge-based anodes in LIBs, although improvements in their coulombic efficiency (CE), capacity retention, and rate performance are still required. One of the major concerns facing the development of Ge anodes is the controlled formation of microstructures. In this Focus Review, we summarize Ge-based materials with different structural dimensions, that is, zero-dimensional (0D), one-dimensional (1D), two-dimensional (2D), three-dimensional (3D), and even monolithic and macroscale structures. Moreover, the design of Ge-based oxide materials, as an effective route for achieving higher Li-storage capacities and cycling performance, is also discussed. Finally, we briefly summarize new types of Ge-based materials, such as ternary germanium oxides, germanium sulfides, and germanium phosphides, and predict that they will bring about a reformation in the field of LIBs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Time integrated optical emission studies of the laser produced germanium plasma

    NASA Astrophysics Data System (ADS)

    Iqbal, Javed; Ahmed, R.; Baig, M. A.

    2017-04-01

    We present new time integrated data on the optical emission spectra of laser produced germanium plasma using a Q-switched Nd:YAG laser (1064 nm), power density up to about 5  ×  109 W cm-2 in conjunction with a set of five spectrometers covering a spectral range from 200 nm to 720 nm. Well resolved structure due to the 4p5s  →  4p2 transition array of neutral germanium and a few multiplets of singly ionized germanium have been observed. Plasma temperature has been determined in the range (9000-11 000) K using four different techniques; two line ratio method, Boltzmann plot, Saha-Boltzmann plot and Marotta’s technique whereas electron density has been deduced from the Stark broadened line profiles in the range (0.5-5.0)  ×  1017 cm-3, depending on the laser pulse energy to produce the germanium plasma. Full width at half maximum (FWHM) of a number of neutral and singly ionized germanium lines have been extracted by the Lorentzian fit to the experimentally observed line profiles. In addition, we have compared the experimentally measured relative line strengths for the 4p5s 3P0,1,2  →  4p2 3P0,1,2 multiplet with that calculated in the LS-coupling scheme revealing that the intermediate coupling scheme is more appropriate for the level designations in germanium.

  20. Bridgman Growth of Germanium

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Cobb, S. D.; Motakef, S.

    1997-01-01

    The high-magnetic-field crystal growth facility at the Marshall Space Flight Center will be briefly described. This facility has been used to grow bulk germanium by the Bridgman technique in magnetic fields up to 5 Tesla. The results of investigations of ampoule material on the interface shape and thermal field applied to the melt on stability against convection will be discussed.

  1. High-resolution imaging gamma-ray spectroscopy with externally segmented germanium detectors

    NASA Technical Reports Server (NTRS)

    Callas, J. L.; Mahoney, W. A.; Varnell, L. S.; Wheaton, W. A.

    1993-01-01

    Externally segmented germanium detectors promise a breakthrough in gamma-ray imaging capabilities while retaining the superb energy resolution of germanium spectrometers. An angular resolution of 0.2 deg becomes practical by combining position-sensitive germanium detectors having a segment thickness of a few millimeters with a one-dimensional coded aperture located about a meter from the detectors. Correspondingly higher angular resolutions are possible with larger separations between the detectors and the coded aperture. Two-dimensional images can be obtained by rotating the instrument. Although the basic concept is similar to optical or X-ray coded-aperture imaging techniques, several complicating effects arise because of the penetrating nature of gamma rays. The complications include partial transmission through the coded aperture elements, Compton scattering in the germanium detectors, and high background count rates. Extensive electron-photon Monte Carlo modeling of a realistic detector/coded-aperture/collimator system has been performed. Results show that these complicating effects can be characterized and accounted for with no significant loss in instrument sensitivity.

  2. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

    NASA Astrophysics Data System (ADS)

    Weber, Walter M.; Mikolajick, Thomas

    2017-06-01

    Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

  3. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    DOEpatents

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  4. Germanium: giving microelectronics an efficiency boost

    USGS Publications Warehouse

    Mercer, Celestine N.

    2015-07-30

    Germanium is an essentially nontoxic element, with the exception of only a few compounds. However, if dissolved concentrations in drinking water are as high as one or more parts per million chronic diseases may occur.

  5. Evaluation of Segmented Amorphous-Contact Planar Germanium Detectors for Heavy-Element Research

    NASA Astrophysics Data System (ADS)

    Jackson, Emily G.

    (>14 cm) wafers is being considered as the next step forward in germanium detector technology. A Small Business Innovative Research (SBIR) grant is funding the construction of such a counter, the world's largest, along with research into radiation hardness. The measurements reported here are encouraging for both ultra-high gamma-ray count rates and for neutron-damage, though reliable high temperature annealing to remove neutron-induced trapping centers will be essential for success.

  6. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

  7. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

  8. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

  9. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

  10. 40 CFR 421.180 - Applicability: Description of the primary and secondary germanium and gallium subcategory.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... primary and secondary germanium and gallium subcategory. 421.180 Section 421.180 Protection of Environment... POINT SOURCE CATEGORY Primary and Secondary Germanium and Gallium Subcategory § 421.180 Applicability: Description of the primary and secondary germanium and gallium subcategory. The provisions of this subpart are...

  11. Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

    NASA Astrophysics Data System (ADS)

    Murphy, N. R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, C. V.

    2014-05-01

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50-1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  12. Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

    NASA Technical Reports Server (NTRS)

    Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

    1999-01-01

    During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

  13. Multiphysical simulation analysis of the dislocation structure in germanium single crystals

    NASA Astrophysics Data System (ADS)

    Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

    2016-09-01

    To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

  14. Germanium geochemistry and mineralogy

    USGS Publications Warehouse

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  15. Quantum interference magnetoconductance of polycrystalline germanium films in the variable-range hopping regime

    NASA Astrophysics Data System (ADS)

    Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Zhan, Zhiqiang; Wu, Weidong

    2018-06-01

    Direct evidence of quantum interference magnetotransport in polycrystalline germanium films in the variable-range hopping (VRH) regime is reported. The temperature dependence of the conductivity of germanium films fulfilled the Mott VRH mechanism with the form of ? in the low-temperature regime (?). For the magnetotransport behaviour of our germanium films in the VRH regime, a crossover, from negative magnetoconductance at the low-field to positive magnetoconductance at the high-field, is observed while the zero-field conductivity is higher than the critical value (?). In the regime of ?, the magnetoconductance is positive and quadratic in the field for some germanium films. These features are in agreement with the VRH magnetotransport theory based on the quantum interference effect among random paths in the hopping process.

  16. Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium.

    DTIC Science & Technology

    1986-09-30

    choice or a process for growing Ge N , layers on germa - nium. a number of workers have employed various de. mum. posited layers on germanium. While...N00014-84-K-0459 V6 Office of Naval Research (Mr. Max N . Yoder, Electronic Division) 4: 800 North Quincy Street Arlington, Virginia 22217 Interfacial...z4) 3 Co0 C14 CM- Lfl n X sj E 𔃺 01 N S) Li (m* m n1 Ln m CU OT X)-(, (L 0IX) D/13si E- 1 0n CtZ) 4-4C ~ IN I- I L L0tX Cd) JN N in - Growth of

  17. Naturally occurring vapor-liquid-solid (VLS) Whisker growth of germanium sulfide

    USGS Publications Warehouse

    Finkelman, R.B.; Larson, R.R.; Dwornik, E.J.

    1974-01-01

    The first naturally occurring terrestrial example of vapor-liquid-solid (VLS) growth has been observed in condensates from gases released by burning coal in culm banks. Scanning electron microscopy, X-ray diffraction, and energy dispersive analysis indicate that the crystals consist of elongated rods (??? 100 ??m) of germanium sulfide capped by bulbs depleted in germanium. ?? 1974.

  18. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

  19. Filterability of the suspension from germanium precipitation with aqueous tannin extract solution

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mikhailov, N.F.; Petropol'skii, V.M.; Semenenko, L.E.

    1978-01-01

    We have already described the use of a neutral aqueous solution of tannin extract to recover germanium from collecting-mains liquor in coking plants. Further pilot commercial trials have encountered problems with the poor filterability of the precipitate obtained when germanium is extracted with this reagent in alkaline media. There are published references to the colloidal nature of the precipitated tannin-germanium complex. It is also known that the alkalinity of the medium influences the degree of association in colloidal systems to a marked extent. Accordingly, special research was needed to establish the relationship between the pH of the precipitation medium andmore » the filterability of the germanium deposit. Samples of collecting-mains liquor were taken from one of the southern coking plants to determine the optimum filtration behavior. The collecting-mains liquor should first be purged of volatile ammonia and then adjusted to pH = 6.5 to 6.7 for precipitation.« less

  20. Germanium precipitation from collecting-mains liquor with tannin extract in an alkaline medium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Medvedev, K.P.; Mikhailov, N.F.; Petrapol'skaya, V.M.

    1976-01-01

    It is proposed to precipitate germanium in a slightly alkaline medium, with a neutral solution of tannin extract in aqueous alkali. The effects of various factors on germanium recovery from collecting-mains liquors have been studied.

  1. Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

    NASA Astrophysics Data System (ADS)

    Roederer, Ian U.

    2012-09-01

    The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 <= [Fe/H] <= -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios remain roughly constant. These data do not directly indicate the origin of germanium, arsenic, and selenium at low metallicity, but they suggest that the weak and main components of the s-process are not likely sources. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained from the data archive at the Space Telescope Science Institute. STScI is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. This research made use of StarCAT, hosted by the Mikulski Archive at the Space Telescope Science Institute (MAST). These data are associated with Programs GO-7348, GO-7433, GO-8197, GO-9048, GO-9455, and GO-9804.Based on data obtained from the European Southern Observatory (ESO) Science Archive Facility. These data are associated with Programs 67.D-0439(A), 074.C-0364(A), 076.B-0055(A), and 080.D-0347(A).This research has made use of the Keck Observatory Archive (KOA), which is operated by

  2. Effect of ion-plated films of germanium and silicon on friction, wear, and oxidation of 52100 bearing steel

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.; Spalvins, T.

    1977-01-01

    Friction and wear experiments were conducted with ion plated films of germanium and silicon on the surface of 52100 bearing steel both dry and in the presence of mineral oil. Both silicon and germanium were found to reduce wear, with germanium being more effective than silicon. An optimum film thickness of germanium for minimum wear without surface crack formation was found to be approximately 400 nanometers (4000 A). The presence of silicon and germanium on the 52100 bearing steel surface improved resistance to oxidation.

  3. The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

    NASA Technical Reports Server (NTRS)

    Raag, V.

    1975-01-01

    Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

  4. Germanium layers grown by zone thermal crystallization from a discrete liquid source

    NASA Astrophysics Data System (ADS)

    Yatsenko, A. N.; Chebotarev, S. N.; Lozovskii, V. N.; Mohamed, A. A. A.; Erimeev, G. A.; Goncharova, L. M.; Varnavskaya, A. A.

    2017-11-01

    It is proposed and investigated a method for growing thin uniform germanium layers onto large silicon substrates. The technique uses the hexagonally arranged local sources filled with liquid germanium. Germanium evaporates on very close substrate and in these conditions the residual gases vapor pressure highly reduces. It is shown that to achieve uniformity of the deposited layer better than 97% the critical thickness of the vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

  5. Germanium and Tin Based Anode Materials for Lithium-Ion Batteries

    NASA Astrophysics Data System (ADS)

    Ji, Dongsheng

    The discovery of safe anode materials with high energy density for lithium-ion batteries has always been a significant topic. Group IV elements have been under intensive study for their high capability of alloying with lithium. Batteries with graphite and tin based anode material have already been applied in cell phones and vehicles. In order to apply group IV elements, their dramatic volume change during lithiation and delithiation processes is the key point to work on. Reducing the particle size is the most common method to buffer the volume expansion. This strategy has been applied on both germanium and tin based materials. Germanium based anode material has been made by two different synthesis methods. The amorphous Ge-C-Ti composite material was made by ball milling method and performed much better than other germanium alloy including Ge-Mg, Ge-Fe and Ge-Fe.Germanium sphere nano particles with diameter of around 50 nm have been made by solution method. After ball milled with graphite, the resulted product performed stable capacity over 500 mAh˙g-1 for more than 20 cycles. Ball milled graphite in the composite plays an important role of buffering volume change and stabilizing germanium. Sn-Fe alloy is one of the feasible solutions to stabilize tin. Sn 2Fe-C composite has been made by ball milling method. After optimizations of the ratio of precursors, reaction time, milling balls and electrolyte additives, the electrochemistry performance was improved. The anode performed 420 mAh˙ -1 at 1.0 mA/cm2 and maintained its structure after cycling at 2.0 mA/cm2. At 0.3 mA/cm2 cycling rate, the anode performed 978 mAh/cm3 after 500 cycles, which still exceeds the theoretical capacity of graphite.

  6. Germanium detector vacuum encapsulation

    NASA Technical Reports Server (NTRS)

    Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

    1991-01-01

    This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

  7. Organotrichlorogermane synthesis by the reaction of elemental germanium, tetrachlorogermane and organic chloride via dichlorogermylene intermediate.

    PubMed

    Okamoto, Masaki; Asano, Takuya; Suzuki, Eiichi

    2004-08-07

    Organotrichlorogermanes were synthesized by the reaction of elemental germanium, tetrachlorogermane and organic chlorides, methyl, propyl, isopropyl and allyl chlorides. Dichlorogermylene formed by the reaction of elemental germanium with tetrachlorogermane was the reaction intermediate, which was inserted into the carbon-chlorine bond of the organic chloride to give organotrichlorogermane. When isopropyl or allyl chloride was used as an organic chloride, organotrichlorogermane was formed also in the absence of tetrachlorogermane. These chlorides were converted to hydrogen chloride, which subsequently reacted with elemental germanium to give the dichlorogermylene intermediate. The reaction of elemental germanium, tetrachlorogermane and organic chlorides provides a simple and easy method for synthesizing organotrichlorogermanes, and all the raw materials are easily available.

  8. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

    NASA Astrophysics Data System (ADS)

    Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

    2009-01-01

    Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

  9. Germanium Requirements for National Defense,

    DTIC Science & Technology

    1991-07-01

    work in this area involves development of hard exterior coating materials that will protect Ge windows but not adversely affect their optical...advanced electronic materials, is used in semiconductor devices, fiber optic systems, and infrared sensors for ships, aircraft, missiles, tanks and anti -tank...infrared sensors for ships, aircraft, missiles, tanks and anti -tank units. Because of its importance in these applications, germanium was added to the

  10. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    This investigation involves the comparison of results achieved from three types of crystal growth of germanium and germanium-silicon alloys: (1) Float zone growth (2) Bridgman growth (3) Detached Bridgman growth crystal The fundamental goal of the proposed research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon (GeSi) crystals (silicon concentration in the solid up to 5 at%) for three different growth configurations in order to quantitatively assess the improvements of crystal quality possible by detached growth.

  11. Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

    PubMed Central

    Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

    2017-01-01

    Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material. PMID:28290495

  12. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeO x) Films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Murphy, Neil R.; Grant, J. T.; Sun, L.

    2014-03-18

    Germanium oxide (GeO x) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O 2/(Ar + O 2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO 2 and then finally to GeO 2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeO x films grown were amorphous. The opticalmore » properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeO x films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO 2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO 2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeO x films is presented and discussed.« less

  13. Electron tunnelling into amorphous germanium and silicon.

    NASA Technical Reports Server (NTRS)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  14. Single-Crystal Germanium Core Optoelectronic Fibers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ji, Xiaoyu; Page, Ryan L.; Chaudhuri, Subhasis

    Synthesis and fabrication of high-quality, small-core single-crystal germanium fibers that are photosensitive at the near-infrared and have low optical losses ≈1 dB cm-1 at 2 μm are reported. These fibers have potential applications in fiber-based spectroscopic imaging, nonlinear optical devices, and photodetection at the telecommunication wavelengths.

  15. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries

    DOE PAGES

    Byrd, Ian; Chen, Hao; Webber, Theron; ...

    2015-10-23

    We report the formation of novel asymmetric membrane electrode containing micron-size (~5 μm) germanium powders through a self-assembly phase inversion method for high capacity lithium ion battery anode. 850 mA h g -1 capacity (70%) can be retained at a current density of 600 mA g -1 after 100 cycles with excellent rate performance. Such a high retention rate has rarely been seen for pristine micron-size germanium anodes. Moreover, scanning electron microscope studies reveal that germanium powders are uniformly embedded in a networking porous structure consisting of both nanopores and macropores. It is believed that such a unique porous structuremore » can efficiently accommodate the ~260% volume change during germanium alloying and de-alloying process, resulting in an enhanced cycling performance. Finally, these porous membrane electrodes can be manufactured in large scale using a roll-to-roll processing method.« less

  16. Cosmogenic activation of germanium used for tonne-scale rare event search experiments

    NASA Astrophysics Data System (ADS)

    Wei, W.-Z.; Mei, D.-M.; Zhang, C.

    2017-11-01

    We report a comprehensive study of cosmogenic activation of germanium used for tonne-scale rare event search experiments. The germanium exposure to cosmic rays on the Earth's surface are simulated with and without a shielding container using Geant4 for a given cosmic muon, neutron, and proton energy spectrum. The production rates of various radioactive isotopes are obtained for different sources separately. We find that fast neutron induced interactions dominate the production rate of cosmogenic activation. Geant4-based simulation results are compared with the calculation of ACTIVIA and the available experimental data. A reasonable agreement between Geant4 simulations and several experimental data sets is presented. We predict that cosmogenic activation of germanium can set limits to the sensitivity of the next generation of tonne-scale experiments.

  17. Constitutive modeling and dynamic softening mechanism during hot deformation of an ultra-pure 17%Cr ferritic stainless steel stabilized with Nb

    NASA Astrophysics Data System (ADS)

    Gao, Fei; Liu, Zhenyu; Misra, R. D. K.; Liu, Haitao; Yu, Fuxiao

    2014-09-01

    The hot deformation behavior of an ultra-pure 17%Cr ferritic stainless steel was studied in the temperature range of 750-1000 °C and strain rates of 0.5 to 10 s-1 using isothermal hot compression tests in a thermomechanical simulator. The microstructural evolution was investigated using electron backscattered diffraction and transmission electron microscopy. A modified constitutive equation considering the effect of strain on material constant was developed, which predicted the flow stress for the deformation conditions studied, except at 950 °C in 1 s-1 and 900 °C in 10 s-1. Decreasing deformation temperature and increasing strain was beneficial in refining the microstructure. Decreasing deformation temperature, the in-grain shear bands appeared in the microstructure. It is suggested that the dynamic softening mechanism is closely related to deformation temperature. At low deformation temperature, dynamic recovery was major softening mechanism and no dynamic recrystallization occurred. At high deformation temperature, dynamic softening was explained in terms of efficient dynamic recovery and limited continuous dynamic recrystallization. A drop in the flow stress was not found due to very small fraction of new grains nucleated during dynamic recrystallization.

  18. Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting.

    PubMed

    Lai, Min; Zhang, Xiaodong; Fang, Fengzhou

    2017-12-01

    Molecular dynamics simulations of nanometric cutting on monocrystalline germanium are conducted to investigate the subsurface deformation during and after nanometric cutting. The continuous random network model of amorphous germanium is established by molecular dynamics simulation, and its characteristic parameters are extracted to compare with those of the machined deformed layer. The coordination number distribution and radial distribution function (RDF) show that the machined surface presents the similar amorphous state. The anisotropic subsurface deformation is studied by nanometric cutting on the (010), (101), and (111) crystal planes of germanium, respectively. The deformed structures are prone to extend along the 110 slip system, which leads to the difference in the shape and thickness of the deformed layer on various directions and crystal planes. On machined surface, the greater thickness of subsurface deformed layer induces the greater surface recovery height. In order to get the critical thickness limit of deformed layer on machined surface of germanium, the optimized cutting direction on each crystal plane is suggested according to the relevance of the nanometric cutting to the nanoindentation.

  19. Study of the possibility of growing germanium single crystals under low temperature gradients

    NASA Astrophysics Data System (ADS)

    Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.; Zhdankov, V. N.

    2014-03-01

    The possibility of growing germanium single crystals under low temperature gradients in order to produce a dislocation-free material has been studied. Germanium crystals with a dislocation density of about 100-200 cm-2 have been grown in a system with a weight control of crystal growth at maximum axial gradients of about 1.5 K/cm.

  20. Hydrometallurgical recovery of germanium from coal gasification fly ash: pilot plant scale evaluation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Arroyo, F.; Fernandez-Pereira, C.; Olivares, J.

    2009-04-15

    In this article, a hydrometallurgical method for the selective recovery of germanium from fly ash (FA) has been tested at pilot plant scale. The pilot plant flowsheet comprised a first stage of water leaching of FA, and a subsequent selective recovery of the germanium from the leachate by solvent extraction method. The solvent extraction method was based on Ge complexation with catechol in an aqueous solution followed by the extraction of the Ge-catechol complex (Ge(C{sub 6}H{sub 4}O{sub 2}){sub 3}{sup 2-}) with an extracting organic reagent (trioctylamine) diluted in an organic solvent (kerosene), followed by the subsequent stripping of the organicmore » extract. The process has been tested on a FA generated in an integrated gasification with combined cycle (IGCC) process. The paper describes the designed 5 kg/h pilot plant and the tests performed on it. Under the operational conditions tested, approximately 50% of germanium could be recovered from FA after a water extraction at room temperature. Regarding the solvent extraction method, the best operational conditions for obtaining a concentrated germanium-bearing solution practically free of impurities were as follows: extraction time equal to 20 min; aqueous phase/organic phase volumetric ratio equal to 5; stripping with 1 M NaOH, stripping time equal to 30 min, and stripping phase/organic phase volumetric ratio equal to 5. 95% of germanium were recovered from water leachates using those conditions.« less

  1. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    NASA Astrophysics Data System (ADS)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  2. Germanium films by polymer-assisted deposition

    DOEpatents

    Jia, Quanxi; Burrell, Anthony K.; Bauer, Eve; Ronning, Filip; McCleskey, Thomas Mark; Zou, Guifu

    2013-01-15

    Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

  3. Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices.

    PubMed

    Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar; Cong, Longqing; Kumar, Abhishek; MacDonald, Kevin F; Singh, Ranjan

    2018-03-01

    Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light-matter interactions within the semiconductor. Here, a germanium-thin-film-based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub-picosecond decay constant of 670 fs is attributed to the presence of trap-assisted recombination sites in the thermally evaporated germanium film. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. The Identification of Scientific Programs to Utilize the Space Environment

    NASA Technical Reports Server (NTRS)

    Kulacki, F. A.; Nerem, R. M.

    1976-01-01

    A program to identify and develop ideas for scientific experimentation on the long duration exposure facility (LDEF) was completed. Four research proposals were developed: (1) Ultra pure germanium gamma ray radiation detectors in the space environment, intended to develop and demonstrate an X-ray and gamma-ray spectroscopy system incorporating a temperature cyclable high-purity germanium detector and diode heat pipe cryogenic system for cooling, (2) growth, morphogenesis and metabolism of plant embryos in the zero-gravity environment, to investigate if the space environment induces mutations in the embryogenic cells so that mutants of commercial significance with desirable attributes may be obtained, (3) effect of zero gravity on the growth and pathogenicity of selected zoopathic fungi. It is possible that new kinds of treatment for candidiasis, and tichophytosis could eventuate from the results of the proposed studies, and (4) importance of gravity to survival strategies of small animals. Gravitational effects may be direct or mediate the selection of genetic variants that are preadapted to weightlessness.

  5. Reduced graphene oxide-germanium quantum dot nanocomposite: electronic, optical and magnetic properties

    NASA Astrophysics Data System (ADS)

    Amollo, Tabitha A.; Mola, Genene T.; Nyamori, Vincent O.

    2017-12-01

    Graphene provides numerous possibilities for structural modification and functionalization of its carbon backbone. Localized magnetic moments can, as well, be induced in graphene by the formation of structural defects which include vacancies, edges, and adatoms. In this work, graphene was functionalized using germanium atoms, we report the effect of the Ge ad atoms on the structural, electrical, optical and magnetic properties of graphene. Reduced graphene oxide (rGO)-germanium quantum dot nanocomposites of high crystalline quality were synthesized by the microwave-assisted solvothermal reaction. Highly crystalline spherical shaped germanium quantum dots, of diameter ranging between 1.6-9.0 nm, are anchored on the basal planes of rGO. The nanocomposites exhibit high electrical conductivity with a sheet resistance of up to 16 Ω sq-1. The electrical conductivity is observed to increase with the increase in Ge content in the nanocomposites. High defect-induced magnetization is attained in the composites via germanium adatoms. The evolution of the magnetic moments in the nanocomposites and the coercivity showed marked dependence on the Ge quantum dots size and concentration. Quantum confinement effects is evidenced in the UV-vis absorbance spectra and photoluminescence emission spectra of the nanocomposites which show marked size-dependence. The composites manifest strong absorption in the UV region, strong luminescence in the near UV region, and a moderate luminescence in the visible region.

  6. Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

    NASA Astrophysics Data System (ADS)

    Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

    2012-06-01

    Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

  7. Ultra-doped n-type germanium thin films for sensing in the mid-infrared

    PubMed Central

    Prucnal, Slawomir; Liu, Fang; Voelskow, Matthias; Vines, Lasse; Rebohle, Lars; Lang, Denny; Berencén, Yonder; Andric, Stefan; Boettger, Roman; Helm, Manfred; Zhou, Shengqiang; Skorupa, Wolfgang

    2016-01-01

    A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range. PMID:27282547

  8. Temperature-dependent Refractive Index of Silicon and Germanium

    NASA Technical Reports Server (NTRS)

    Frey, Bradley J.; Leviton, Douglas B.; Madison, Timothy J.

    2006-01-01

    Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than k5 x 10" is desired.

  9. Experience from operating germanium detectors in GERDA

    NASA Astrophysics Data System (ADS)

    Palioselitis, Dimitrios; GERDA Collaboration

    2015-05-01

    Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

  10. High temperature material interactions of thermoelectric systems using silicon germanium.

    NASA Technical Reports Server (NTRS)

    Stapfer, G.; Truscello, V. C.

    1973-01-01

    The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

  11. Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

    NASA Astrophysics Data System (ADS)

    Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet H.; Bardin, Joseph C.

    2016-01-01

    Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon-germanium LNAs is explored to study the possibility of operating these devices from low supply voltages. A new small-signal heterojunction bipolar transistor noise model applicable to both the forward-active and saturation regimes is developed from first principles. Experimental measurements of a device across a wide range of temperatures are then presented and the dependence of the noise parameters on collector-emitter voltage is described. This paper concludes with the demonstration of a high-gain 1.8-3.6-GHz cryogenic LNA achieving a noise temperature of 3.4-5 K while consuming just 290 μW when operating at 15-K physical temperature.

  12. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    PubMed

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  13. Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

    PubMed

    Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

    2017-02-28

    Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

  14. A dual-PIXE tomography setup for reconstruction of Germanium in ICF target

    NASA Astrophysics Data System (ADS)

    Guo, N.; Lu, H. Y.; Wang, Q.; Meng, J.; Gao, D. Z.; Zhang, Y. J.; Liang, X. X.; Zhang, W.; Li, J.; Ma, X. J.; Shen, H.

    2017-08-01

    Inertial Confinement Fusion (ICF) is one type of fusion energy research which could initiate nuclear fusion reactions through heating and compressing thermonuclear fuel. Compared to a pure plastic target, Germanium doping into the CH ablator layer by Glow Discharge Polymer (GDP) technique can increase the ablation velocity and the standoff distance between the ablation front and laser-deposition region. During target fabrication process, quantitative doping of Ge should be accurately controlled. Particle Induced X-ray Emission Tomography (PIXE-T) can make not only quantification of the concentration, but also reconstruction of the spatial distribution of doped element. The Si (Li) detector for PIXE tomography technique had a disadvantage of low counting rate. To make up this deficiency, another detector of Si (Li) with the same configuration positioned at the opposite side with the same detective angle 135° have been implemented. Simultaneously acquired elemental maps of Ge obtained using two detectors may be different because of the X-ray absorption along the X-ray exit route in the target. In this paper, the X-ray detection efficiency is drastically improved by this dual-PIXE tomography system.

  15. Silicon Germanium Cryogenic Low Noise Amplifiers

    NASA Astrophysics Data System (ADS)

    Bardin, J. C.; Montazeri, S.; Chang, Su-Wei

    2017-05-01

    Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today’s cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

  16. High-speed recovery of germanium in a convection-aided mode using functional porous hollow-fiber membranes.

    PubMed

    Ozawa, I; Saito, K; Sugita, K; Sato, K; Akiba, M; Sugo, T

    2000-08-04

    A porous hollow-fiber membrane capable of recovery of germanium from a liquid stream was prepared by radiation-induced graft polymerization of an epoxy-group-containing vinyl monomer, glycidyl methacrylate, and subsequent functionalization with 2,2'-iminodiethanol, di-2-propanolamine, N-methylglucamine, and 3-amino-1,2-propanediol. The functional group density was as high as 1.4 mol per kg of the resultant hollow fiber. The polymer chains containing functional groups surrounding the pores enabled a high-speed recovery of germanium during permeation of a germanium oxide (GeO2) solution through the pores of the hollow fiber. Because of a negligible diffusional mass-transfer resistance, germanium concentration changes with the effluent volume, i.e., breakthrough curves, overlapped irrespective of the residence time of the solution, which ranged from 0.37 to 3.7 s across the hollow fiber. After repeated use of adsorption and elution, the adsorption capacity did not deteriorate.

  17. Enhanced light trapping by focused ion beam (FIB) induced self-organized nanoripples on germanium (100) surface

    NASA Astrophysics Data System (ADS)

    Kamaliya, Bhaveshkumar; Mote, Rakesh G.; Aslam, Mohammed; Fu, Jing

    2018-03-01

    In this paper, we demonstrate enhanced light trapping by self-organized nanoripples on the germanium surface. The enhanced light trapping leading to high absorption of light is confirmed by the experimental studies as well as the numerical simulations using the finite-difference time-domain method. We used gallium ion (Ga+) focused ion beam to enable the formation of the self-organized nanoripples on the germanium (100) surface. During the fabrication, the overlap of the scanning beam is varied from zero to negative value and found to influence the orientation of the nanoripples. Evolution of nanostructures with the variation of beam overlap is investigated. Parallel, perpendicular, and randomly aligned nanoripples with respect to the scanning direction are obtained via manipulation of the scanning beam overlap. 95% broadband absorptance is measured in the visible electromagnetic region for the nanorippled germanium surface. The reported light absorption enhancement can significantly improve the efficiency of germanium-silicon based photovoltaic systems.

  18. Germanium multiphase equation of state

    DOE PAGES

    Crockett, Scott D.; Lorenzi-Venneri, Giulia De; Kress, Joel D.; ...

    2014-05-07

    A new SESAME multiphase germanium equation of state (EOS) has been developed using the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element

  19. A method for Removing Surface Contamination on Ultra-pure Copper Spectrometer Components

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hoppe, Eric W.; Seifert, Allen; Aalseth, Craig E.

    Spectrometers for the lowest-level radiometric measurements require materials of extreme radiopurity. Measurements of rare nuclear decays, e.g. neutrinoless double-beta decay, can require construction and shielding materials with bulk radiopurity reaching one micro-Becquerel per kilogram or less. When such extreme material purity is achieved, surface contamination, particularly solid daughters in the natural radon decay chains, can become the limiting background. High-purity copper is an important material for ultra-low-background spectrometers and thus is the focus of this work. A method for removing surface contamination at very low levels without attacking the bulk material is described. An assay method using a low-background proportionalmore » counter made of the material under examination is employed, and the resulting preliminary result of achievable surface contamination levels is presented.« less

  20. Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

    NASA Technical Reports Server (NTRS)

    Elbuluk, Malik E.

    2003-01-01

    Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

  1. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    NASA Technical Reports Server (NTRS)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Kaiser, N.; Cobb, S. D.; Motakef, S.; Vujisic, L. J.; Croell, A.; Dold, P.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have

  2. Purification of Germanium Crystals by Zone Refining

    NASA Astrophysics Data System (ADS)

    Kooi, Kyler; Yang, Gang; Mei, Dongming

    2016-09-01

    Germanium zone refining is one of the most important techniques used to produce high purity germanium (HPGe) single crystals for the fabrication of nuclear radiation detectors. During zone refining the impurities are isolated to different parts of the ingot. In practice, the effective isolation of an impurity is dependent on many parameters, including molten zone travel speed, the ratio of ingot length to molten zone width, and number of passes. By studying the theory of these influential factors, perfecting our cleaning and preparation procedures, and analyzing the origin and distribution of our impurities (aluminum, boron, gallium, and phosphorous) identified using photothermal ionization spectroscopy (PTIS), we have optimized these parameters to produce HPGe. We have achieved a net impurity level of 1010 /cm3 for our zone-refined ingots, measured with van der Pauw and Hall-effect methods. Zone-refined ingots of this purity can be processed into a detector grade HPGe single crystal, which can be used to fabricate detectors for dark matter and neutrinoless double beta decay detection. This project was financially supported by DOE Grant (DE-FG02-10ER46709) and the State Governor's Research Center.

  3. Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Moffatt, Robert

    2016-03-01

    In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Ourmore » measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.« less

  4. Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

    2014-12-21

    We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

  5. Analysis of high-purity germanium dioxide by ETV-ICP-AES with preliminary concentration of trace elements.

    PubMed

    Medvedev, Nickolay S; Shaverina, Anastasiya V; Tsygankova, Alphiya R; Saprykin, Anatoly I

    2016-08-01

    The paper presents a combined technique of germanium dioxide analysis by inductively coupled plasma atomic emission spectrometry (ICP-AES) with preconcentration of trace elements by distilling off matrix and electrothermal (ETV) introduction of the trace elements concentrate into the ICP. Evaluation of metrological characteristics of the developed technique of high-purity germanium dioxide analysis was performed. The limits of detection (LODs) for 25 trace elements ranged from 0.05 to 20ng/g. The accuracy of proposed technique is confirmed by "added-found" («or spiking») experiment and comparing the results of ETV-ICP-AES and ICP-AES analysis of high purity germanium dioxide samples. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Germanium and uranium in coalified wood bom upper Devonian black shale

    USGS Publications Warehouse

    Breger, I.A.; Schopf, J.M.

    1955-01-01

    Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Cauixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragmenta were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding. ?? 1955.

  7. Germanium and uranium in coalified wood from Upper Devonian black shale

    USGS Publications Warehouse

    Breger, Irving A.; Schopf, James M.

    1954-01-01

    Microscopic study of black, vitreous, carbonaceous material occurring in the Chattanooga shale in Tennessee and in the Cleveland member of the Ohio shale in Ohio has revealed coalified woody plant tissue. Some samples have shown sufficient detail to be identified with the genus Callixylon. Similar material has been reported in the literature as "bituminous" or "asphaltic" stringers. Spectrographic analyses of the ash from the coalified wood have shown unusually high percentages of germanium, uranium, vanadium, and nickel. The inverse relationship between uranium and germanium in the ash and the ash content of various samples shows an association of these elements with the organic constituents of the coal. On the basis of geochemical considerations, it seems most probable that the wood or coalified wood was germanium-bearing at the time logs or woody fragments were floated into the basins of deposition of the Chattanooga shale and the Cleveland member of the Ohio shale. Once within the marine environment, the material probably absorbed uranium with the formation of organo-uranium compounds such as have been found to exist in coals. It is suggested that a more systematic search for germaniferous coals in the vicinity of the Chattanooga shale and the Cleveland member of the Ohio shale might be rewarding.

  8. The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

    NASA Astrophysics Data System (ADS)

    Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

    2014-09-01

    This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

  9. Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

    NASA Astrophysics Data System (ADS)

    Leung, Michael

    Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron

  10. Determination of germanium by AAS in chloride-containing matrices.

    PubMed

    Anwari, M A; Abbasi, H U; Volkan, M; Ataman, O Y

    1996-06-01

    Interference effects of NaCl on the ET-AAS determination of Ge have been studied. The use of several matrix modifiers to alleviate this problem such as Ni and Zn perchlorates and nitrates, nitric acid, ammonium nitrate are reported. The stabilizing effect of Zn and Ni perchlorates allows the use of high pretreatment temperatures. NaCl is thus thermally volatilized from the atomizer by employing pretreatment temperatures higher than 1500 degrees C resulting in an improved sensitivity. Germanium levels in zinc plant slag samples, have been determined and compared to those obtained for the same samples spiked with NaCl with platform and wall atomization using nickel perchlorate as a matrix modifier. The results were compared with those from a hydride generation system equipped with a liquid nitrogen trap. The recoveries for germanium have been almost complete and amount to 99% for the original slag samples and 80% for 15% (w/w) NaCl containing spiked samples.

  11. Regimes of laser-induced periodic surface structure on germanium: radiation remnants and surface plasmons.

    PubMed

    Young, J F; Sipe, J E; van Driel, H M

    1983-08-01

    We present experimental evidence showing that the period of the rippled surface structure induced on germanium by 1.06-microm laser pulses undergoes a discontinuous shift above a certain threshold intensity. The measured shift, as a angle of incidence of the damaging beam, is quantitatively interpreted as a transition between a regime of inhomogeneous melting controlled by radiation-remnant field structures and a regime of ripple formation surface plasmons in an optically thick layer of liquid, metallic germanium formed at the surface.

  12. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  13. Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

    DOE PAGES

    Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; ...

    2017-08-28

    Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

  14. Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

    PubMed Central

    Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.; Remington, Bruce A.; Hahn, Eric N.; More, Karren L.; Meyers, Marc A.

    2017-01-01

    Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition. PMID:28847926

  15. Generating gradient germanium nanostructures by shock-induced amorphization and crystallization.

    PubMed

    Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E; Remington, Bruce A; Hahn, Eric N; More, Karren L; Meyers, Marc A

    2017-09-12

    Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report here a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. We propose that germanium undergoes amorphization above a threshold stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.

  16. Generating gradient germanium nanostructures by shock-induced amorphization and crystallization

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhao, Shiteng; Kad, Bimal; Wehrenberg, Christopher E.

    Gradient nanostructures are attracting considerable interest due to their potential to obtain superior structural and functional properties of materials. Applying powerful laser-driven shocks (stresses of up to one-third million atmospheres, or 33 gigapascals) to germanium, we report a complex gradient nanostructure consisting of, near the surface, nanocrystals with high density of nanotwins. Beyond there, the structure exhibits arrays of amorphous bands which are preceded by planar defects such as stacking faults generated by partial dislocations. At a lower shock stress, the surface region of the recovered target is completely amorphous. Here, we propose that germanium undergoes amorphization above a thresholdmore » stress and that the deformation-generated heat leads to nanocrystallization. These experiments are corroborated by molecular dynamics simulations which show that supersonic partial dislocation bursts play a role in triggering the crystalline-to-amorphous transition.« less

  17. Position resolution simulations for the inverted-coaxial germanium detector, SIGMA

    NASA Astrophysics Data System (ADS)

    Wright, J. P.; Harkness-Brennan, L. J.; Boston, A. J.; Judson, D. S.; Labiche, M.; Nolan, P. J.; Page, R. D.; Pearce, F.; Radford, D. C.; Simpson, J.; Unsworth, C.

    2018-06-01

    The SIGMA Germanium detector has the potential to revolutionise γ-ray spectroscopy, providing superior energy and position resolving capabilities compared with current large volume state-of-the-art Germanium detectors. The theoretical position resolution of the detector as a function of γ-ray interaction position has been studied using simulated detector signals. A study of the effects of RMS noise at various energies has been presented with the position resolution ranging from 0.33 mm FWHM at Eγ = 1 MeV, to 0.41 mm at Eγ = 150 keV. An additional investigation into the effects pulse alignment have on pulse shape analysis and in turn, position resolution has been performed. The theoretical performance of SIGMA operating in an experimental setting is presented for use as a standalone detector and as part of an ancillary system.

  18. The Majorana Demonstrator: A search for neutrinoless double-beta decay of germanium-76

    NASA Astrophysics Data System (ADS)

    Elliott, S. R.; Abgrall, N.; Aguayo, E.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Boswell, M.; Brudanin, V.; Busch, M.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Combs, D. C.; Detwiler, J. A.; Doe, P. J.; Efremenko, Yu.; Egorov, V.; Ejiri, H.; Esterline, J.; Fast, J. E.; Finnerty, P.; Fraenkle, F. M.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guiseppe, V. E.; Gusev, K.; Hallin, A. L.; Hazama, R.; Hegai, A.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Kochetov, O.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Leviner, L. E.; Loach, J. C.; MacMullin, S.; Martin, R. D.; Mertens, S.; Mizouni, L.; Nomachi, M.; Orrell, J. L.; O'Shaughnessy, C.; Overman, N. R.; Phillips, D. G., II; Poon, A. W. P.; Pushkin, K.; Radford, D. C.; Rielage, K.; Robertson, R. G. H.; Ronquest, M. C.; Schubert, A. G.; Shanks, B.; Shima, T.; Shirchenko, M.; Snavely, K. J.; Snyder, N.; Soin, A.; Strain, J.; Suriano, A. M.; Timkin, V.; Tornow, W.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Xu, W.; Yakushev, E.; Young, A. R.; Yu, C.-H.; Yumatov, V.

    2013-12-01

    The Majorana collaboration is searching for neutrinoless double beta decay using 76Ge, which has been shown to have a number of advantages in terms of sensitivities and backgrounds. The observation of neutrinoless double-beta decay would show that lepton number is violated and that neutrinos are Majorana particles and would simultaneously provide information on neutrino mass. Attaining sensitivities for neutrino masses in the inverted hierarchy region, 15 - 50 meV, will require large, tonne-scale detectors with extremely low backgrounds, at the level of ˜1 count/t-y or lower in the region of the signal. The Majorana collaboration, with funding support from DOE Office of Nuclear Physics and NSF Particle Astrophysics, is constructing the Demonstrator, an array consisting of 40 kg of p-type point-contact high-purity germanium (HPGe) detectors, of which ˜30 kg will be enriched to 87% in 76Ge. The Demonstrator is being constructed in a clean room laboratory facility at the 4850' level (4300 m.w.e.) of the Sanford Underground Research Facility (SURF) in Lead, SD. It utilizes a compact graded shield approach with the inner portion consisting of ultra-clean Cu that is being electroformed and machined underground. The primary aim of the Demonstrator is to show the feasibility of a future tonne-scale measurement in terms of backgrounds and scalability.

  19. Ultra-low energy photoreceivers for optical interconnects

    NASA Astrophysics Data System (ADS)

    Going, Ryan Wayne

    Optical interconnects are increasingly important for our communication and data center systems, and are forecasted to be an essential component of future computers. In order to meet these future demands, optical interconnects must be improved to consume less power than they do today. To do this, both more efficient transmitters and more sensitive receivers must be developed. This work addresses the latter, focusing on device level improvements to tightly couple a low capacitance photodiode with the first stage transistor of the receiver as a single phototransistor device. First I motivate the need for a coupled phototransistor using a simple circuit model which shows how receiver sensitivity is determined by photodiode capacitance and the length of wire connecting it to the first transistor in a receiver amplifier. Then I describe our use of the unique rapid melt growth technique, which is used to integrate crystalline germanium on silicon photonics substrates without an epitaxial reactor. The resulting material quality is demonstrated with high quality (0.95 A/W, 40+ GHz) germanium photodiodes on silicon waveguides. Next I describe two germanium phototransistors I have developed. One is a germanium- gated MOSFET on silicon photonics which has up to 18 A/W gate-controlled responsivity at 1550 nm. Simulations show how MOSFET scaling rules can be easily applied to increase both speed and sensitivity. The second is a floating base germanium bipolar phototransistor on silicon photonics with a 15 GHz gain x bandwidth product. The photoBJT also has a clear scaling path, and it is proposed to create a separate gain and absorption region photoBJT to realize the maximum benefit of scaling the BJT without negatively affecting its absorption and photocarrier collection. Following this design a 120 GHz gain x bandwidth photoBJT is simulated. Finally I present a metal-cavity, which can have over 50% quantum efficiency absorption in sub-100 aF germanium photodiodes, which

  20. FPGA-based digital signal processing for the next generation radio astronomy instruments: ultra-pure sideband separation and polarization detection

    NASA Astrophysics Data System (ADS)

    Alvear, Andrés.; Finger, Ricardo; Fuentes, Roberto; Sapunar, Raúl; Geelen, Tom; Curotto, Franco; Rodríguez, Rafael; Monasterio, David; Reyes, Nicolás.; Mena, Patricio; Bronfman, Leonardo

    2016-07-01

    Field Programmable Gate Arrays (FPGAs) capacity and Analog to Digital Converters (ADCs) speed have largely increased in the last decade. Nowadays we can find one million or more logic blocks (slices) as well as several thousand arithmetic units (ALUs/DSP) available on a single FPGA chip. We can also commercially procure ADC chips reaching 10 GSPS, with 8 bits resolution or more. This unprecedented power of computing hardware has allowed the digitalization of signal processes traditionally performed by analog components. In radio astronomy, the clearest example has been the development of digital sideband separating receivers which, by replacing the IF hybrid and calibrating the system imbalances, have exhibited a sideband rejection above 40dB; this is 20 to 30dB higher than traditional analog sideband separating (2SB) receivers. In Rodriguez et al.,1 and Finger et al.,2 we have demonstrated very high digital sideband separation at 3mm and 1mm wavelengths, using laboratory setups. We here show the first implementation of such technique with a 3mm receiver integrated into a telescope, where the calibration was performed by quasi-optical injection of the test tone in front of the Cassegrain antenna. We also reported progress in digital polarization synthesis, particularly in the implementation of a calibrated Digital Ortho-Mode Transducer (DOMT) based on the Morgan et al. proof of concept.3 They showed off- line synthesis of polarization with isolation higher than 40dB. We plan to implement a digital polarimeter in a real-time FPGA-based (ROACH-2) platform, to show ultra-pure polarization isolation in a non-stop integrating spectrometer.

  1. Targeted Recombinant Progeny: a design for ultra-high resolution mapping of Quantitative Trait Loci in crosses between inbred or pure lines.

    PubMed

    Heifetz, Eliyahu M; Soller, Morris

    2015-07-07

    High-resolution mapping of the loci (QTN) responsible for genetic variation in quantitative traits is essential for positional cloning of candidate genes, and for effective marker assisted selection. The confidence interval (QTL) flanking the point estimate of QTN-location is proportional to the number of individuals in the mapping population carrying chromosomes recombinant in the given interval. Consequently, many designs for high resolution QTN mapping are based on increasing the proportion of recombinants in the mapping population. The "Targeted Recombinant Progeny" (TRP) design is a new design for high resolution mapping of a target QTN in crosses between pure, or inbred lines. It is a three-generation procedure generating a large number of recombinant individuals within a QTL previously shown to contain a QTN. This is achieved by having individuals that carry chromosomes recombinant across the target QTL interval as parents of a large mapping population; most of whom will therefore carry recombinant chromosomes targeted to the given QTL. The TRP design is particularly useful for high resolution mapping of QTN that differentiate inbred or pure lines, and hence are not amenable to high resolution mapping by genome-wide association tests. In the absence of residual polygenic variation, population sizes required for achieving given mapping resolution by the TRP-F2 design relative to a standard F2 design ranged from 0.289 for a QTN with standardized allele substitution effect = 0.2, mapped to an initial QTL of 0.2 Morgan to 0.041 for equivalent QTN mapped to an initial QTL of 0.02 M. In the presence of residual polygenic variation, the relative effectiveness of the TRP design ranges from 1.068 to 0.151 for the same initial QTL intervals and QTN effect. Thus even in the presence of polygenic variation, the TRP can still provide major savings. Simulation showed that mapping by TRP should be based on 30-50 markers spanning the initial interval; and on at least 50 or

  2. Ultra-strong coupling with spin-split heavyhole cyclotron resonances in sGe QWs (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Keller, Janine; Scalari, Giacomo; Maissen, Curdin; Paravicini-Bagliani, Gian Lorenzo; Haase, Johannes; Failla, Michele; Myronov, Maksym; Leadley, David R.; Lloyd-Hughes, James; Faist, Jérôme

    2017-02-01

    We study the ultra-strong coupling (USC) of Landau level transitions in strained Germanium quantum wells (sGe QW) to THz metasurfaces. The spin-splitting of the heavy-hole cyclotron resonance in sGe QWs due to the Rashba spin-orbit interaction in magnetic field offers an excellent platform to investigate ultra-strong coupling to a non-parabolic system. THz split ring resonators can be tuned to coincide with the single cyclotron transition (around 0.4 THz and a magnetic field of 1.5 T) or the spin-resolved transitions of the sGe QWs (at 1.3 THz and 4.5 T). Coupling to the single cyclotron yields a normalized USC rate of 25%, resulting from fitting with a Hopfield-like Hamiltonian model. Coupling to two or three cyclotron resonances in sGe QWs lead to the observation of multiple polaritons branches, one polariton branch for each oscillator involved in the system. An adaption of the theory allows to also describe this multiple-oscillator system and to determine the coupling strengths. The different Rabi-splittings for the multiple cyclotrons coupling to the same resonator mode relate to the underlying differences in the material. Furthermore, the visibility of an additional transition, possibly a light hole transition with very low carrier density, is strongly enhanced due to the coupling to the LC-resonance with a normalized strong coupling ratio of 4.7%. Future perspectives include controlling spin-flip transitions in USC and studying the impact of non-parabolicity on the ultra-strong coupling physics.

  3. Ion microprobe elemental analyses of impact features on interplanetary dust experiment sensor surfaces

    NASA Technical Reports Server (NTRS)

    Simon, Charles G.; Hunter, Jerry L.; Wortman, Jim J.; Griffis, Dieter P.

    1992-01-01

    Hypervelocity impact features from very small particles (less than 3 microns in diameter) on several of the electro-active dust sensors used in the Interplanetary Dust Experiment (IDE) were subjected to elemental analysis using an ion microscope. The same analytical techniques were applied to impact and containment features on a set of ultra-pure, highly polished single crystal germanium wafer witness plates that were mounted on tray B12. Very little unambiguously identifiable impactor debris was found in the central craters or shatter zones of small impacts in this crystalline surface. The surface contamination, ubiquitous on the surface of the Long Duration Exposure Facility, has greatly complicated data collection and interpretation from microparticle impacts on all surfaces.

  4. Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Podkopaev, O. I.; Shimanskiy, A. F., E-mail: shimanaf@mail.ru; Kopytkova, S. A.

    2016-10-15

    The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.

  5. A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.

    2016-12-01

    Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of themore » newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.« less

  6. Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

    NASA Astrophysics Data System (ADS)

    Monmeyran, Corentin; Crowe, Iain F.; Gwilliam, Russell M.; Heidelberger, Christopher; Napolitani, Enrico; Pastor, David; Gandhi, Hemi H.; Mazur, Eric; Michel, Jürgen; Agarwal, Anuradha M.; Kimerling, Lionel C.

    2018-04-01

    Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.

  7. Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

    PubMed

    Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

    2016-07-01

    A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. Ultra-High Rate Measurements of Spent Fuel Gamma-Ray Emissions

    NASA Astrophysics Data System (ADS)

    Rodriguez, Douglas; Vandevender, Brent; Wood, Lynn; Glasgow, Brian; Taubman, Matthew; Wright, Michael; Dion, Michael; Pitts, Karl; Runkle, Robert; Campbell, Luke; Fast, James

    2014-03-01

    Presently there are over 200,000 irradiated spent nuclear fuel (SNF) assemblies in the world, each containing a concerning amount of weapons-usable material. Both facility operators and safeguards inspectors want to improve composition determination. Current measurements are expensive and difficult so new methods are developed through models. Passive measurements are limited since a few specific decay products and the associated down-scatter overwhelm the gamma rays of interest. Active interrogation methods produce gamma rays beyond 3 MeV, minimizing the impact of the passive emissions that drop off sharply above this energy. New devices like the Ultra-High Rate Germanium (UHRGe) detector are being developed to advance these novel measurement methods. Designed for reasonable resolution at 106 s-1 output rates (compared to ~ 1 - 10 e 3 s-1 standards), SNF samples were directly measured using UHRGe and compared to models. Model verification further enables using Los Alamos National Laboratory SNF assembly models, developed under the Next Generation Safeguards Initiative, to determine emission and signal expectations. Measurement results and future application requirements for UHRGe will be discussed.

  9. Characterization of a high-purity germanium detector for small-animal SPECT

    PubMed Central

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-01-01

    We present an initial evaluation of a mechanically-cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axis. Finally, a flood-corrected-flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT. PMID:21852723

  10. Characterization of a high-purity germanium detector for small-animal SPECT.

    PubMed

    Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

    2011-09-21

    We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

  11. Germanium Lift-Off Masks for Thin Metal Film Patterning

    NASA Technical Reports Server (NTRS)

    Brown, Ari

    2012-01-01

    A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

  12. Formation of Porous Germanium Layers by Silver-Ion Implantation

    NASA Astrophysics Data System (ADS)

    Stepanov, A. L.; Vorob'ev, V. V.; Nuzhdin, V. I.; Valeev, V. F.; Osin, Yu. N.

    2018-04-01

    We propose a method for the formation of porous germanium ( P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag+ ions into single-crystalline germanium ( c-Ge). This is demonstrated by implantation of 30-keV Ag+ ions into a polished c-Ge plate to a dose of 1.5 × 1017 ion/cm2 at an ion beam-current density of 5 μA/cm2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ˜10-20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag+ ion implantation is accompanied by effective sputtering of the Ge surface.

  13. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    PubMed Central

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-01-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

  14. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    PubMed

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  15. Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

    PubMed Central

    Chaabane, Ibtihel; Banerjee, Debika; Touayar, Oualid; Cloutier, Sylvain G.

    2017-01-01

    Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface. PMID:28773215

  16. A Modified Monte Carlo Method for Carrier Transport in Germanium, Free of Isotropic Rates

    NASA Astrophysics Data System (ADS)

    Sundqvist, Kyle

    2010-03-01

    We present a new method for carrier transport simulation, relevant for high-purity germanium < 100 > at a temperature of 40 mK. In this system, the scattering of electrons and holes is dominated by spontaneous phonon emission. Free carriers are always out of equilibrium with the lattice. We must also properly account for directional effects due to band structure, but there are many cautions in the literature about treating germanium in particular. These objections arise because the germanium electron system is anisotropic to an extreme degree, while standard Monte Carlo algorithms maintain a reliance on isotropic, integrated rates. We re-examine Fermi's Golden Rule to produce a Monte Carlo method free of isotropic rates. Traditional Monte Carlo codes implement particle scattering based on an isotropically averaged rate, followed by a separate selection of the particle's final state via a momentum-dependent probability. In our method, the kernel of Fermi's Golden Rule produces analytical, bivariate rates which allow for the simultaneous choice of scatter and final state selection. Energy and momentum are automatically conserved. We compare our results to experimental data.

  17. Cryogenic readout techniques for germanium detectors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Benato, G.; Cattadori, C.; Di Vacri, A.

    High Purity Germanium detectors are used in many applications, from nuclear and astro-particle physics, to homeland security or environment protection. Although quite standard configurations are often used, with cryostats, charge sensitive amplifiers and analog or digital acquisition systems all commercially available, it might be the case that a few specific applications, e.g. satellites, portable devices, cryogenic physics experiments, etc. also require the development of a few additional or complementary techniques. An interesting case is for sure GERDA, the Germanium Detector Array experiment, searching for neutrino-less double beta decay of {sup 76}Ge at the Gran Sasso National Laboratory of INFN -more » Italy. In GERDA the entire detector array, composed of semi-coaxial and BEGe naked crystals, is operated suspended inside a cryostat filled with liquid argon, that acts not only as cooling medium and but also as an active shield, thanks to its scintillation properties. These peculiar circumstances, together with the additional requirement of a very low radioactive background from all the materials adjacent to the detectors, clearly introduce significant constraints on the design of the Ge front-end readout electronics. All the Ge readout solutions developed within the framework of the GERDA collaboration, for both Phase I and Phase II, will be briefly reviewed, with their relative strength and weakness compared together and with respect to ideal Ge readout. Finally, the digital processing techniques developed by the GERDA collaboration for energy estimation of Ge detector signals will be recalled. (authors)« less

  18. Thermodynamics of Alloys: Studies of Nickel-Gallium, Nickel-Germanium and Nickel-Rhodium Alloys.

    DTIC Science & Technology

    NICKEL ALLOYS, *GALLIUM ALLOYS, *GERMANIUM ALLOYS, * RHODIUM ALLOYS, *PHASE STUDIES, THERMODYNAMICS, INTERMETALLIC COMPOUNDS, FREE ENERGY, ENTROPY, HEAT OF FORMATION, CRYSTAL STRUCTURE, UNITED KINGDOM.

  19. Research and Development Supporting a Next Generation Germanium Double Beta Decay Experiment

    NASA Astrophysics Data System (ADS)

    Rielage, Keith; Elliott, Steve; Chu, Pinghan; Goett, Johnny; Massarczyk, Ralph; Xu, Wenqin

    2015-10-01

    To improve the search for neutrinoless double beta decay, the next-generation experiments will increase in source mass and continue to reduce backgrounds in the region of interest. A promising technology for the next generation experiment is large arrays of Germanium p-type point contact detectors enriched in 76-Ge. The experience, expertise and lessons learned from the MAJORANA DEMONSTRATOR and GERDA experiments naturally lead to a number of research and development activities that will be useful in guiding a future experiment utilizing Germanium. We will discuss some R&D activities including a hybrid cryostat design, background reduction in cabling, connectors and electronics, and modifications to reduce assembly time. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

  20. Melting point of high-purity germanium stable isotopes

    NASA Astrophysics Data System (ADS)

    Gavva, V. A.; Bulanov, A. D.; Kut'in, A. M.; Plekhovich, A. D.; Churbanov, M. F.

    2018-05-01

    The melting point (Tm) of germanium stable isotopes 72Ge, 73Ge, 74Ge, 76Ge was determined by differential scanning calorimetry. With the increase in atomic mass of isotope the decrease in Tm is observed. The decrease was equal to 0.15 °C per the unit of atomic mass which qualitatively agrees with the value calculated by Lindemann formula accounting for the effect of "isotopic compression" of elementary cell.

  1. Active noise canceling system for mechanically cooled germanium radiation detectors

    DOEpatents

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  2. Novel attributes of bandstructure effect on the performance of germanium Schottky barrier MOSFET

    NASA Astrophysics Data System (ADS)

    Ahangari, Zahra

    2018-07-01

    A detailed study of the bandstructure effect on the performance of a double-gate germanium Schottky barrier MOSFET (Ge-SBFET) is investigated. An accurate calculation of the thickness-dependent 2D bandstructure is employed within a 20 orbital sp 3 d 5 s* tight-binding formalism, and the quantum transport of the carriers is elucidated based on the non-equilibrium Green’s function formalism. Quantum confinement considerably changes the bandstructure profile of the Ge-SBFET and causes the energy difference of the | {{Γ }}-L| valleys to rearrange. For a channel thickness of about 1.5 nm, the two-fold X 2 type valleys with major axes at the {{Γ }} point form a subband with minimum energy, and the | {{Γ }}-L| energy split is reduced to 13 meV, which compensates for the lack of density of states in the nanoscale regime. Moreover, the strong transverse confinement of the ultra-thin body Ge-SBFET increases the effective Schottky barrier height and a parabolic potential profile with discrete resonant states is formed along the current transport direction, mainly at low drain voltages. Resonant tunnelling creates oscillations in the transfer characteristic, especially at low temperatures and at a reduced value of drain voltages. The impact of the physical and structural parameters, which may affect the resonant tunnelling in a Ge-SBFET, is thoroughly analysed. The results in this paper pave the way towards elucidating the applications of nanoscale Ge-SBFETs.

  3. Ultra-High Density Single Nanometer-Scale Anodic Alumina Nanofibers Fabricated by Pyrophosphoric Acid Anodizing

    NASA Astrophysics Data System (ADS)

    Kikuchi, Tatsuya; Nishinaga, Osamu; Nakajima, Daiki; Kawashima, Jun; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

    2014-12-01

    Anodic oxide fabricated by anodizing has been widely used for nanostructural engineering, but the nanomorphology is limited to only two oxides: anodic barrier and porous oxides. Therefore, the discovery of an additional anodic oxide with a unique nanofeature would expand the applicability of anodizing. Here we demonstrate the fabrication of a third-generation anodic oxide, specifically, anodic alumina nanofibers, by anodizing in a new electrolyte, pyrophosphoric acid. Ultra-high density single nanometer-scale anodic alumina nanofibers (1010 nanofibers/cm2) consisting of an amorphous, pure aluminum oxide were successfully fabricated via pyrophosphoric acid anodizing. The nanomorphologies of the anodic nanofibers can be controlled by the electrochemical conditions. Anodic tungsten oxide nanofibers can also be fabricated by pyrophosphoric acid anodizing. The aluminum surface covered by the anodic alumina nanofibers exhibited ultra-fast superhydrophilic behavior, with a contact angle of less than 1°, within 1 second. Such ultra-narrow nanofibers can be used for various nanoapplications including catalysts, wettability control, and electronic devices.

  4. Ultra-High Density Single Nanometer-Scale Anodic Alumina Nanofibers Fabricated by Pyrophosphoric Acid Anodizing

    PubMed Central

    Kikuchi, Tatsuya; Nishinaga, Osamu; Nakajima, Daiki; Kawashima, Jun; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

    2014-01-01

    Anodic oxide fabricated by anodizing has been widely used for nanostructural engineering, but the nanomorphology is limited to only two oxides: anodic barrier and porous oxides. Therefore, the discovery of an additional anodic oxide with a unique nanofeature would expand the applicability of anodizing. Here we demonstrate the fabrication of a third-generation anodic oxide, specifically, anodic alumina nanofibers, by anodizing in a new electrolyte, pyrophosphoric acid. Ultra-high density single nanometer-scale anodic alumina nanofibers (1010 nanofibers/cm2) consisting of an amorphous, pure aluminum oxide were successfully fabricated via pyrophosphoric acid anodizing. The nanomorphologies of the anodic nanofibers can be controlled by the electrochemical conditions. Anodic tungsten oxide nanofibers can also be fabricated by pyrophosphoric acid anodizing. The aluminum surface covered by the anodic alumina nanofibers exhibited ultra-fast superhydrophilic behavior, with a contact angle of less than 1°, within 1 second. Such ultra-narrow nanofibers can be used for various nanoapplications including catalysts, wettability control, and electronic devices. PMID:25491282

  5. Effect of the microstructure on electrical properties of high-purity germanium

    NASA Astrophysics Data System (ADS)

    Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

    2013-05-01

    The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

  6. Rhabdomyolysis and exercise-associated hyponatremia in ultra-bikers and ultra-runners.

    PubMed

    Chlíbková, Daniela; Knechtle, Beat; Rosemann, Thomas; Tomášková, Ivana; Novotný, Jan; Žákovská, Alena; Uher, Tomáš

    2015-01-01

    Exercise-associated hyponatremia (EAH), rhabdomyolysis and renal failure appear to be a unique problem in ultra-endurance racers. We investigated the combined occurrence of EAH and rhabdomyolysis in seven different ultra-endurance races and disciplines (i.e. multi-stage mountain biking, 24-h mountain biking, 24-h ultra-running and 100-km ultra-running). Two (15.4%) ultra-runners (man and woman) from hyponatremic ultra-athletes (n = 13) and four (4%) ultra-runners (four men) from the normonatremic group (n = 100) showed rhabdomyolysis following elevated blood creatine kinase (CK) levels > 10,000 U/L without the development of renal failure and the necessity of a medical treatment. Post-race creatine kinase, plasma and urine creatinine significantly increased, while plasma [Na(+)] and creatine clearance decreased in hyponatremic and normonatremic athletes, respectively. The percentage increase of CK was higher in the hyponatremic compared to the normonatremic group (P < 0.05). Post-race CK levels were higher in ultra-runners compared to mountain bikers (P < 0.01), in faster normonatremic (P < 0.05) and older and more experienced hyponatremic ultra-athletes (P < 0.05). In all finishers, pre-race plasma [K(+)] was related to post-race CK (P < 0.05). Hyponatremic ultra-athletes tended to develop exercise-induced rhabdomyolysis more frequently than normonatremic ultra-athletes. Ultra-runners tended to develop rhabdomyolysis more frequently than mountain bikers. We found no association between post-race plasma [Na(+)] and CK concentration in both hypo- and normonatremic ultra-athletes.

  7. Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

    DOE PAGES

    Aguayo, E.; Amman, M.; Avignone, F. T.; ...

    2012-11-09

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Furthermore, experiments that operate germanium detectors with a verymore » low energy threshold may benefit from the methods presented herein.« less

  8. A crystalline germanium flexible thin-film transistor

    NASA Astrophysics Data System (ADS)

    Higashi, H.; Nakano, M.; Kudo, K.; Fujita, Y.; Yamada, S.; Kanashima, T.; Tsunoda, I.; Nakashima, H.; Hamaya, K.

    2017-11-01

    We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C . A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

  9. Removal of the long-lived {sup 222}Rn daughters from steel and germanium surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wojcik, Marcin; Zuzel, Grzegorz; Majorovits, Bela

    Removal of the long-lived {sup 222}Rn daughters ({sup 210}Pb, {sup 210}Bi and {sup 210}Po) from stainless steel and germanium surfaces was investigated. As cleaning technique etching was applied to samples in a form of discs exposed earlier to a strong radon source. Reduction of the {sup 210}Pb activity was tested using a HPGe spectrometer, for {sup 210}Bi a beta spectrometer and for {sup 210}Po an alpha spectrometer was used. According to the conducted measurements all the isotopes were removed very efficiently from germanium. Results obtained for stainless steel were worse but still better than those achieved for copper.

  10. Intrinsic germanium detector used in borehole sonde for uranium exploration

    USGS Publications Warehouse

    Senftle, F.E.; Moxham, R.M.; Tanner, A.B.; Boynton, G.R.; Philbin, P.W.; Baicker, J.A.

    1976-01-01

    A borehole sonde (~1.7 m long; 7.3 cm diameter) using a 200 mm2 planar intrinsic germanium detector, mounted in a cryostat cooled by removable canisters of frozen propane, has been constructed and tested. The sonde is especially useful in measuring X- and low-energy gamma-ray spectra (40–400 keV). Laboratory tests in an artificial borehole facility indicate its potential for in-situ uranium analyses in boreholes irrespective of the state of equilibrium in the uranium series. Both natural gamma-ray and neutron-activation gamma-ray spectra have been measured with the sonde. Although the neutron-activation technique yields greater sensitivity, improvements being made in the resolution and efficiency of intrinsic germanium detectors suggest that it will soon be possible to use a similar sonde in the passive mode for measurement of uranium in a borehole down to about 0.1% with acceptable accuracy. Using a similar detector and neutron activation, the sonde can be used to measure uranium down to 0.01%.

  11. Passivation of micro-strip gas chambers with an interstitial germanium coating

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Miyamoto, J.; Knoll, G.F.; Amos, N.

    1996-12-31

    Micro-strip gas chambers (MSGCs) were constructed in the Solid-State Electronics Laboratory of the University of Michigan and their performance was studied. Many efforts have been made in the past to construct MSGCs that yield high absolute gas gain and stable gas gain. Introducing a thin germanium layer has been effective for passivation but difficulties associated with the poor adhesiveness of the thin layer have been a serious obstacle. This paper reports on a new method used to overcome these difficulties. Unlike the conventional coating method the thin germanium layer was successfully deposited between the strip lines. This technique requires amore » careful geometric alignment of a second photomask with the original micro-strip structure. The resulting detector performance was noteworthy and an absolute gas gain of 2 {center_dot} 10{sup 4} was easily achieved by the new chamber. The chamber`s gain instability was also reduced significantly compared with those without interstitial coating.« less

  12. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    DTIC Science & Technology

    2012-09-01

    MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

  13. Solution synthesis of germanium nanocrystals

    DOEpatents

    Gerung, Henry [Albuquerque, NM; Boyle, Timothy J [Kensington, MD; Bunge, Scott D [Cuyahoga Falls, OH

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  14. Spent Fuel Assay with an Ultra-High Rate HPGe Spectrometer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Fast, James; Fulsom, Bryan; Pitts, Karl

    2015-07-01

    Traditional verification of spent nuclear fuel (SNF) includes determination of initial enrichment, burnup and cool down time (IE, BU, CT). Along with neutron measurements, passive gamma assay provides important information for determining BU and CT. Other gamma-ray-based assay methods such as passive tomography and active delayed gamma offer the potential to measure the spatial distribution of fission products and the fissile isotopic concentration of the fuel, respectively. All fuel verification methods involving gamma-ray spectroscopy require that the spectrometers manage very high count rates while extracting the signatures of interest. PNNL has developed new digital filtering and analysis techniques to producemore » an ultra-high rate gamma-ray spectrometer from a standard coaxial high-purity germanium (HPGe) crystal. This 37% relative efficiency detector has been operated for SNF measurements at input count rates of 500-1300 kcps and throughput in excess of 150 kcps. Optimized filtering algorithms preserve the spectroscopic capability of the system even at these high rates. This paper will present the results of both passive and active SNF measurement performed with this system at PNNL. (authors)« less

  15. Gallium-doped germanium, evaluation of photoconductors, part 1

    NASA Technical Reports Server (NTRS)

    Moore, W. J.

    1979-01-01

    Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.

  16. Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

    NASA Technical Reports Server (NTRS)

    Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

    1997-01-01

    A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

  17. Partially deuterated potassium dihydrogen phosphate optimized for ultra-broadband optical parametric amplification

    NASA Astrophysics Data System (ADS)

    Fujioka, K.; Fujimoto, Y.; Tsubakimoto, K.; Kawanaka, J.; Shoji, I.; Miyanaga, N.

    2015-03-01

    The refractive index of a potassium dihydrogen phosphate (KDP) crystal strongly depends on the deuteration fraction of the crystal. The wavelength dependence of the phase-matching angle in the near-infrared optical parametric process shows convex and concave characteristics for pure KDP and pure deuterated KDP (DKDP), respectively, when pumped by the second harmonic of Nd- or Yb-doped solid state lasers. Using these characteristics, ultra-broadband phase matching can be realized by optimization of the deuteration fraction. The refractive index of DKDP that was grown with a different deuteration fraction (known as partially deuterated KDP or pDKDP) was measured over a wide wavelength range of 0.4-1.5 μm by the minimum deviation method. The wavelength dispersions of the measured refractive indices were fitted using a modified Sellmeier equation, and the deuteration fraction dependence was analyzed using the Lorentz-Lorenz equation. The wavelength-dependent phase-matching angle for an arbitrary deuteration fraction was then calculated for optical parametric amplification with pumping at a wavelength of 526.5 nm. The results revealed that a refractive index database with precision of more than 2 × 10-5 was necessary for exact evaluation of the phase-matching condition. An ultra-broad gain bandwidth of up to 490 nm will be feasible when using the 68% pDKDP crystal.

  18. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    NASA Astrophysics Data System (ADS)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  19. Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6): the largest metalloid cluster compound of germanium: on the way to fullerene-like compounds?

    PubMed

    Schenk, Christian; Schnepf, Andreas

    2008-10-14

    The reaction of GeBr with LiGe(SiMe(3))(3) yields the largest metalloid cluster compound of germanium Ge(14)[Ge(SiMe(3))(3)](5)Li(3)(THF)(6), in which 14 germanium atoms are arranged as a hollow sphere in the cluster core, showing that in the case of germanium also fullerene-like compounds might be present in the borderland between the molecular and solid states.

  20. The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

    NASA Astrophysics Data System (ADS)

    Karlsteen, M.; Willander, M.

    1993-11-01

    In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

  1. The Chemistry of Ultra-Radiopure Materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Miley, Harry S.; Aalseth, Craig E.; Day, Anthony R.

    Ultra-pure materials are needed for the construction of the next generation of ultra-low level radiation detectors. These detectors are used for environmental research as well as rare nuclear decay experiments, e.g. probing the effective mass and character of the neutrino. Unfortunately, radioactive isotopes are found in most construction materials, either primordial isotopes, activation/spallation products from cosmic-ray exposure, or surface deposition of dust or radon progeny. Copper is an ideal candidate material for these applications. High-purity copper is commercially available and, when even greater radiopurity is needed, additional electrochemical purification can be combined with the final construction step, resulting in “electroformed”more » copper of extreme purity. Copper also offers desirable thermal, mechanical, and electrical properties. To bridge the gap between commercially-available high purity copper and the most stringent requirements of next-generation low-background experiments, a method of additional chemical purification is being developed based on well-known copper electrochemistry. This method is complemented with the co-development of surface cleaning techniques and more sensitive assay for both surface and bulk contamination. Developments in the electroplating of copper, surface cleaning, assay of U and Th in the bulk copper, and residual surface contamination will be discussed relative to goals of less than 1 microBq/kg Th.« less

  2. Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

    PubMed

    Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

    2011-03-09

    Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

  3. Search for ultra high energy astrophysical neutrinos with the ANITA experiment

    NASA Astrophysics Data System (ADS)

    Romero-Wolf, Andrew

    2010-12-01

    This work describes a search for cosmogenic neutrinos at energies above 1018 eV with the Antarctic Impulsive Transient Antenna (ANITA). ANITA is a balloon-borne radio interferometer designed to measure radio impulsive emission from particle showers produced in the Antarctic ice-sheet by ultra-high energy neutrinos (UHEnu). Flying at 37 km altitude the ANITA detector is sensitive to 1M km3 of ice and is expected to produce the highest exposure to ultra high energy neutrinos to date. The design, flight performance, and analysis of the first flight of ANITA in 2006 are the subject of this dissertation. Due to sparse anthropogenic backgrounds throughout the Antarctic continent, the ANITA analysis depends on high resolution directional reconstruction. An interferometric method was developed that not only provides high resolution but is also sensitive to very weak radio emissions. The results of ANITA provide the strongest constraints on current ultra-high energy neutrino models. In addition there was a serendipitous observation of ultra-high energy cosmic ray geosynchrotron emissions that are of distinct character from the expected neutrino signal. This thesis includes a study of the radio Cherenkov emission from ultra-high energy electromagnetic showers in ice in the time-domain. All previous simulations computed the radio pulse frequency spectrum. I developed a purely time-domain algorithm for computing radiation using the vector potentials of charged particle tracks. The results are fully consistent with previous frequency domain calculations and shed new light into the properties of the radio pulse in the time domain. The shape of the pulse in the time domain is directly related to the depth development of the excess charge in the shower and its width to the observation angle with respect to the Cherenkov direction. This information can be of great practical importance for interpreting actual data.

  4. Multiline phase conjugation at 4 microm in germanium.

    PubMed

    Depatie, D; Haueisen, D

    1980-06-01

    Phase conjugation by degenerate four-wave mixing in the 4-microm region in germanium has been observed for both single-line and multiline radiation. By using single-line output of a DF laser at 3.8 microm, X3 has been measured to be 4 X 10(-1) esu. Phase conjugation of multiline laser output has been achieved with an efficiency of 0.03%, a level that is consistent with the susceptibility found for single-line phase conjugation and the assumption of independent conjugation of each line of the multiline output.

  5. Current experiments in germanium 0 ν β β search -- GERDA and MAJORANA

    NASA Astrophysics Data System (ADS)

    von Sturm, K.

    2015-01-01

    There are unanswered questions regarding neutrino physics that are of great interest for the scientific community. For example the absolute masses, the mass hierarchy and the nature of neutrinos are unknown up to now. The discovery of neutrinoless double beta decay (0νββ) would prove the existence of a Majorana mass, which would be linked to the half-life of the decay, and would in addition provide an elegant solution for the small mass of the neutrinos via the seesaw mechanism. Because of an existing discovery claim of 0νββ of 76Ge and the excellent energy resolution achievable, germanium is of special interest in the search for 0νββ . In this article the state of the art of germanium 0νββ search, namely the GERDA experiment and MAJORANA demonstrator, is presented. In particular, recent results of the GERDA collaboration, which strongly disfavour the above mentioned claim, are discussed.

  6. Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium.

    PubMed

    Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J; Kraus, Peter M; Cushing, Scott K; Gandman, Andrey; Kaplan, Christopher J; Oh, Myoung Hwan; Prell, James S; Prendergast, David; Pemmaraju, Chaitanya D; Neumark, Daniel M; Leone, Stephen R

    2017-06-01

    Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20  cm -3 . Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

  7. Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

    PubMed Central

    Zürch, Michael; Chang, Hung-Tzu; Borja, Lauren J.; Kraus, Peter M.; Cushing, Scott K.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

    2017-01-01

    Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions. PMID:28569752

  8. Ultra fine grained Ti prepared by severe plastic deformation

    NASA Astrophysics Data System (ADS)

    Lukáč, F.; Čížek, J.; Knapp, J.; Procházka, I.; Zháňal, P.; Islamgaliev, R. K.

    2016-01-01

    The positron annihilation spectroscopy was employed for characterisation of defects in pure Ti with ultra fine grained (UFG) structure. UFG Ti samples were prepared by two techniques based on severe plastic deformation (SPD): (i) high pressure torsion (HPT) and (ii) equal channel angular pressing (ECAP). Although HPT is the most efficient technique for grain refinement, the size of HPT-deformed specimens is limited. On the other hand, ECAP is less efficient in grain refinement but enables to produce larger samples more suitable for industrial applications. Characterisation of defects by positron annihilation spectroscopy was accompanied by hardness testing in order to monitor the development of mechanical properties of UFG Ti.

  9. Multi-element germanium detectors for synchrotron applications

    NASA Astrophysics Data System (ADS)

    Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; Vernon, E.; Pinelli, D.; Dooryhee, E.; Ghose, S.; Caswell, T.; Siddons, D. P.; Miceli, A.; Baldwin, J.; Almer, J.; Okasinski, J.; Quaranta, O.; Woods, R.; Krings, T.; Stock, S.

    2018-04-01

    We have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. We will discuss the technical details of the systems, and present some of the results from them.

  10. Soft lithographic functionalization and patterning oxide-free silicon and germanium.

    PubMed

    Bowers, Carleen M; Toone, Eric J; Clark, Robert L; Shestopalov, Alexander A

    2011-12-16

    The development of hybrid electronic devices relies in large part on the integration of (bio)organic materials and inorganic semiconductors through a stable interface that permits efficient electron transport and protects underlying substrates from oxidative degradation. Group IV semiconductors can be effectively protected with highly-ordered self-assembled monolayers (SAMs) composed of simple alkyl chains that act as impervious barriers to both organic and aqueous solutions. Simple alkyl SAMs, however, are inert and not amenable to traditional patterning techniques. The motivation for immobilizing organic molecular systems on semiconductors is to impart new functionality to the surface that can provide optical, electronic, and mechanical function, as well as chemical and biological activity. Microcontact printing (μCP) is a soft-lithographic technique for patterning SAMs on myriad surfaces. Despite its simplicity and versatility, the approach has been largely limited to noble metal surfaces and has not been well developed for pattern transfer to technologically important substrates such as oxide-free silicon and germanium. Furthermore, because this technique relies on the ink diffusion to transfer pattern from the elastomer to substrate, the resolution of such traditional printing is essentially limited to near 1 μm. In contrast to traditional printing, inkless μCP patterning relies on a specific reaction between a surface-immobilized substrate and a stamp-bound catalyst. Because the technique does not rely on diffusive SAM formation, it significantly expands the diversity of patternable surfaces. In addition, the inkless technique obviates the feature size limitations imposed by molecular diffusion, facilitating replication of very small (<200 nm) features. However, up till now, inkless μCP has been mainly used for patterning relatively disordered molecular systems, which do not protect underlying surfaces from degradation. Here, we report a simple, reliable

  11. Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

    NASA Astrophysics Data System (ADS)

    Tengku Kamarul Bahri, T. N. H.; Wagiran, H.; Hussin, R.; Saeed, M. A.; Hossain, I.; Ali, H.

    2014-10-01

    Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5-4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

  12. Temperature-Dependent Compensation and Optical Quenching by Thermal Oxygen Donors in Germanium

    NASA Technical Reports Server (NTRS)

    Watson, D.; Guptill, M.; Huffman, J.; Krabach, T.; Raines, S.

    1994-01-01

    Photothermal ionization spectroscopy of germanium, doped in the impurity-band conduction range with gallium acceptors and with thermal oxygen donors, reveals that the donors and acceptors compensate each other at temperatures higher than about 5K, but that the impurities coexist as neutral donors and acceptors at lower temperatures.

  13. Technology for High Pure Aluminum Oxide Production from Aluminum Scrap

    NASA Astrophysics Data System (ADS)

    Ambaryan, G. N.; Vlaskin, M. S.; Shkolnikov, E. I.; Zhuk, A. Z.

    2017-10-01

    In this study a simple ecologically benign technology of high purity alumina production is presented. The synthesis process consists of three steps) oxidation of aluminum in water at temperature of 90 °C) calcinations of Al hydroxide in atmosphere at 1100 °C) high temperature vacuum processing of aluminum alpha oxide at 1750 °C. Oxidation of aluminum scrap was carried out under intensive mixing in water with small addition of KOH as a catalyst. It was shown that under implemented experimental conditions alkali was continuously regenerated during oxidation reaction and synergistic effect of low content alkali aqueous solution and intensive mixing worked. The product of oxidation of aluminum scrap is the powder of Al(OH)3. Then it can be preliminary granulated or directly subjected to thermal treatment deleting the impurities from the product (aluminum oxide). It was shown the possibility to produce the high-purity aluminum oxide of 5N grade (99.999 %). Aluminum oxide, synthesized by means of the proposed method, meets the requirements of industrial manufacturers of synthetic sapphire (aluminum oxide monocrystals). Obtained high pure aluminum oxide can be also used for the manufacture of implants, artificial joints, microscalpels, high-purity ceramics and other refractory shapes for manufacture of ultra-pure products.

  14. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

    PubMed

    Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2013-11-06

    We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

  15. Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

    NASA Astrophysics Data System (ADS)

    Vandenberghe, William G.; Fischetti, Massimo V.

    2015-01-01

    The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: DTA = 4.1 × 108 eV/cm, DTO = 1.2 × 109 eV/cm, and DLO = 2.2 × 109 eV/cm for BTBT in silicon and DTA = 7.8 × 108 eV/cm and DLO = 1.3 × 109 eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.

  16. [Effects of germanium on cell growth, polysaccharide production and cellular redox status in suspension cultures of protocorm-like bodies of Dendrobium huoshanense].

    PubMed

    Wei, Ming; Yang, Chaoying; Jiang, Shaotong

    2010-03-01

    To solve the problem of low growth rate and metabolism level in suspension cultures of protocorm-like bodies (PLBs) of Dendrobium huoshanense. The effects of germanium on PLB proliferation and accumulation of polysaccharides together with nutrient utilization were investigated and the contents of reducing sugars, soluble proteins, the activities of antioxidant enzymes and redox status of the cells of PLB were analyzed. The results indicated that the optimum concentration of germanium dioxide (4.0 mg/L) significantly enhanced the cell growth and accumulation of polysaccharides, greatly improved contents of reducing sugars and soluble proteins, increased the activities of superoxide dismutase (SOD) and catalase (CAT) but decreased the activity of peroxidase(POD). The cell dry weight and production of polysaccharides were 32.6 g/L and 3.78 g/L, respectively. The analysis of cellular redox status showed that the ratio of reduced glutathione (GSH) to oxidized glutathione (GSSG) in cells and the activity of glutathione reductase were significantly increased by the addition of germanium dioxide. The suitable concentration of germanium dioxide was beneficial to the cell growth and the accumulation of polysaccharides.

  17. Contamination control and assay results for the Majorana Demonstrator ultra clean components

    NASA Astrophysics Data System (ADS)

    Christofferson, C. D.; Abgrall, N.; Alvis, S. I.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Barton, C. J.; Bertrand, F. E.; Bode, T.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, T. S.; Chan, Y.-D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R.; Hehn, L.; Henning, R.; Hoppe, E. W.; Howe, M. A.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Myslik, J.; O'Shaughnessy, C.; Othman, G.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Rielage, K.; Robertson, R. G. H.; Rouf, N. W.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

    2018-01-01

    The Majorana Demonstrator is a neutrinoless double beta decay experiment utilizing enriched Ge-76 detectors in 2 separate modules inside of a common solid shield at the Sanford Underground Research Facility. The Demonstrator has utilized world leading assay sensitivities to develop clean materials and processes for producing ultra-pure copper and plastic components. This experiment is now operating, and initial data provide new insights into the success of cleaning and processing. Post production copper assays after the completion of Module 1 showed an increase in U and Th contamination in finished parts compared to starting bulk material. A revised cleaning method and additional round of surface contamination studies prior to Module 2 construction have provided evidence that more rigorous process control can reduce surface contamination. This article describes the assay results and discuss further studies to take advantage of assay capabilities for the purpose of maintaining ultra clean fabrication and process design.

  18. Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form.

    PubMed

    Flynn, G; Stokes, K; Ryan, K M

    2018-05-31

    Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

  19. Reduction of Defects in Germanium-Silicon

    NASA Technical Reports Server (NTRS)

    2003-01-01

    Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a

  20. Silicon and Germanium (111) Surface Reconstruction

    NASA Astrophysics Data System (ADS)

    Hao, You Gong

    Silicon (111) surface (7 x 7) reconstruction has been a long standing puzzle. For the last twenty years, various models were put forward to explain this reconstruction, but so far the problem still remains unsolved. Recent ion scattering and channeling (ISC), scanning tunneling microscopy (STM) and transmission electron diffraction (TED) experiments reveal some new results about the surface which greatly help investigators to establish better models. This work proposes a silicon (111) surface reconstruction mechanism, the raising and lowering mechanism which leads to benzene -like ring and flower (raised atom) building units. Based on these building units a (7 x 7) model is proposed, which is capable of explaining the STM and ISC experiment and several others. Furthermore the building units of the model can be used naturally to account for the germanium (111) surface c(2 x 8) reconstruction and other observed structures including (2 x 2), (5 x 5) and (7 x 7) for germanium as well as the (/3 x /3)R30 and (/19 x /19)R23.5 impurity induced structures for silicon, and the higher temperature disordered (1 x 1) structure for silicon. The model is closely related to the silicon (111) surface (2 x 1) reconstruction pi-bonded chain model, which is the most successful model for the reconstruction now. This provides an explanation for the rather low conversion temperature (560K) of the (2 x 1) to the (7 x 7). The model seems to meet some problems in the explanation of the TED result, which is explained very well by the dimer, adatom and stacking fault (DAS) model proposed by Takayanagi. In order to explain the TED result, a variation of the atomic scattering factor is proposed. Comparing the benzene-like ring model with the DAS model, the former needs more work to explain the TED result and the later has to find a way to explain the silicon (111) surface (1 x 1) disorder experiment.

  1. Structural, chemical and physical properties of pure and La3+ doped L-Threonine acetate crystals

    NASA Astrophysics Data System (ADS)

    Senthamizhan, A.; Sambathkumar, K.; Nithiyanantham, S.; Venkatachalapathy, M.; Rajkamal, N.

    2017-12-01

    The pure and La3+ doped L- Threonine crystals can be grown by slow evaporation techniques. The crystal structure were examined through X-Ray diffraction (XRD) analysis, confirmed the P212121 system. The quantitative nature of dopant can be analyzed with Inductively Coupled Plasma (ICP) study. The Fourier Transform Infra-Red (FTIR) and Fourier Transform (FT- Raman) investigations yields the possible stretching/bonding with their functional groups and the qualitative/quantitative nature of both crystals is analyzed. The optical behavior of crystals can be studied through Ultra Violet (UV) - Visible spectrometer. The mechanical, thermal and decomposition studies can be carried out through Vickers hardness test, Thermo Gravometric Analysis (TGA) and Differential Thermal Analysis (DTA). The Non Linear Optical (NLO) properties are found more than Potassium Phosphate (KDP) through Kurtz powders technique. The dielectric and optical absorption studies for both pure and L-doped crystals were studied and interpreted all the properties. The La3+ dopant increases the properties are investigated.

  2. Chiral nematic porous germania and germanium/carbon films

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Nguyen, Thanh-Dinh; Xie, Kai; Hamad, Wadood Y.; MacLachlan, Mark J.

    2015-07-01

    We report our extensive attempts and, ultimately, success to produce crack-free, chiral nematic GeO2/cellulose nanocrystal (CNC) composite films with tunable photonic properties from the controlled assembly of germanium(iv) alkoxides with the lyotropic liquid-crystalline CNCs in a mixed solvent of water/DMF. With different pyrolysis conditions, the photonic GeO2/CNC composites can be converted into freestanding chiral nematic films of amorphous GeO2, and semiconducting mesoporous GeO2/C and Ge/C replicas. These new materials are promising for chiral separation, enantioselective adsorption, catalysis, sensing, optoelectronics, and lithium ion batteries. Furthermore, the new, reproducible synthesis strategies developed may be applicable for constructing other composites and porous materials with chiral nematic ordering.We report our extensive attempts and, ultimately, success to produce crack-free, chiral nematic GeO2/cellulose nanocrystal (CNC) composite films with tunable photonic properties from the controlled assembly of germanium(iv) alkoxides with the lyotropic liquid-crystalline CNCs in a mixed solvent of water/DMF. With different pyrolysis conditions, the photonic GeO2/CNC composites can be converted into freestanding chiral nematic films of amorphous GeO2, and semiconducting mesoporous GeO2/C and Ge/C replicas. These new materials are promising for chiral separation, enantioselective adsorption, catalysis, sensing, optoelectronics, and lithium ion batteries. Furthermore, the new, reproducible synthesis strategies developed may be applicable for constructing other composites and porous materials with chiral nematic ordering. Electronic supplementary information (ESI) available: TGA, IR, Raman, TEM, SEM, BET. See DOI: 10.1039/c5nr02520f

  3. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    NASA Astrophysics Data System (ADS)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  4. SMUVS: Spitzer Matching survey of the UltraVISTA ultra-deep Stripes

    NASA Astrophysics Data System (ADS)

    Caputi, Karina; Ashby, Matthew; Fazio, Giovanni; Huang, Jiasheng; Dunlop, James; Franx, Marijn; Le Fevre, Olivier; Fynbo, Johan; McCracken, Henry; Milvang-Jensen, Bo; Muzzin, Adam; Ilbert, Olivier; Somerville, Rachel; Wechsler, Risa; Behroozi, Peter; Lu, Yu

    2014-12-01

    We request 2026.5 hours to homogenize the matching ultra-deep IRAC data of the UltraVISTA ultra-deep stripes, producing a final area of ~0.6 square degrees with the deepest near- and mid-IR coverage existing in any such large area of the sky (H, Ks, [3.6], [4.5] ~ 25.3-26.1 AB mag; 5 sigma). The UltraVISTA ultra-deep stripes are contained within the larger COSMOS field, which has a rich collection of multi-wavelength, ancillary data, making it ideal to study different aspects of galaxy evolution with high statistical significance and excellent redshift accuracy. The UltraVISTA ultra-deep stripes are the region of the COSMOS field where these studies can be pushed to the highest redshifts, but securely identifying high-z galaxies, and determining their stellar masses, will only be possible if ultra-deep mid-IR data are available. Our IRAC observations will allow us to: 1) extend the galaxy stellar mass function at redshifts z=3 to z=5 to the intermediate mass regime (M~5x10^9-10^10 Msun), which is critical to constrain galaxy formation models; 2) gain a factor of six in the area where it is possible to effectively search for z>=6 galaxies and study their properties; 3) measure, for the first time, the large-scale structure traced by an unbiased galaxy sample at z=5 to z=7, and make the link to their host dark matter haloes. This cannot be done in any other field of the sky, as the UltraVISTA ultra-deep stripes form a quasi-contiguous, regular-shape field, which has a unique combination of large area and photometric depth. 4) provide a unique resource for the selection of secure z>5 targets for JWST and ALMA follow up. Our observations will have an enormous legacy value which amply justifies this new observing-time investment in the COSMOS field. Spitzer cannot miss this unique opportunity to open up a large 0.6 square-degree window to the early Universe.

  5. Surface-enhanced infrared spectroscopic studies of the catalytic behavior of silver nanoparticles on a germanium substrate.

    PubMed

    Liou, Yen-Chen Maggie; Yang, Jyisy; Fasasi, Ayuba; Griffiths, Peter R

    2011-05-01

    The catalytic activity of silver nanoparticles (AgNPs) on a germanium substrate is reported. Para-nitrothiophenol (pNTP) that had been adsorbed on this substrate is converted to p-aminothiophenol (pATP) under very mild reaction conditions, such as simply soaking in water. The AgNPs may be formed either by physical vapor deposition or by electroless deposition from a solution of silver nitrate. Analogous reactions were not observed on copper nanoparticles on germanium or AgNPs on silicon or zinc selenide even though very slow conversion of pNTP to pATP was observed with Au nanoparticles (AuNPs) on Ge under controlled reaction conditions. The effects of factors that could influence the catalytic reaction were examined; these included the particle size of the AgNPs, reaction temperature, concentration and chemical nature of other ions present in the solution, the pH of the water, and the nature of the substrate. The reaction rate was approximately independent of the particle size for AgNPs between 50 and 150 nm in diameter. Increasing the temperature accelerates the reaction significantly; at temperatures above 40 °C, the adsorbed pNTP is completely converted by water within five minutes. Not surprisingly, the reaction rate was increased as the pH of the solution was decreased, as the reduction of each nitro group to an amino group requires six protons. The presence of Br(-) and I(-) ions accelerated the reaction to the point that even at 4 °C, the conversion of the nitro group was still observable, while solutions containing chloride ions had to be heated to 40 °C before their effect became apparent. Apparently, Br(-) and I(-) ions remove the oxide layer from the surface of the germanium substrate, facilitating transfer of electrons from the germanium to the nitro group of the pNTP.

  6. Determining orbital particle parameters of impacts into germanium using morphology analysis and calibration data from hypervelocity impact experiments in the laboratory

    NASA Technical Reports Server (NTRS)

    Paul, Klaus G.

    1995-01-01

    This paper describes the work that is done at the Lehrstuhl fur Raumfahrttechnik (lrt) at the Technische Universitat Munchen to examine particle impacts into germanium surfaces which were flown on board the LDEF satellite. Besides the description of the processing of the samples, a brief overview of the particle launchers at our institute is given together with descriptions of impact morphology of high- and hypervelocity particles into germanium. Since germanium is a brittle, almost glass-like material, the impact morphology may also be interesting for anyone dealing with materials such as optics and solar cells. The main focus of our investigations is to learn about the impacting particle's properties, for example mass, velocity and direction. This is done by examining the morphology, various geometry parameters, crater obliqueness and crater volume.

  7. Investigation of germanium quantum-well light sources.

    PubMed

    Fei, Edward T; Chen, Xiaochi; Zang, Kai; Huo, Yijie; Shambat, Gary; Miller, Gerald; Liu, Xi; Dutt, Raj; Kamins, Theodore I; Vuckovic, Jelena; Harris, James S

    2015-08-24

    In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

  8. Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

    PubMed

    Vivien, Laurent; Polzer, Andreas; Marris-Morini, Delphine; Osmond, Johann; Hartmann, Jean Michel; Crozat, Paul; Cassan, Eric; Kopp, Christophe; Zimmermann, Horst; Fédéli, Jean Marc

    2012-01-16

    We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

  9. Size-Tunable Photothermal Germanium Nanocrystals.

    PubMed

    Sun, Wei; Zhong, Grace; Kübel, Christian; Jelle, Abdinoor A; Qian, Chenxi; Wang, Lu; Ebrahimi, Manuchehr; Reyes, Laura M; Helmy, Amr S; Ozin, Geoffrey A

    2017-05-22

    Germanium nanocrystals (ncGe) have not received as much attention as silicon nanocrystals (ncSi). However, Ge has demonstrated superiority over Si nanomaterials in some applications. Examples include, high charge-discharge rate lithium-ion batteries, small band-gap opto-electronic devices, and photo-therapeutics. When stabilized in an oxide matrix (ncGe/GeO x ), its high charge-retention has enabled non-volatile memories. It has also found utility as a high-capacity anode material for Li-ion batteries with impressive stability. Herein, we report an organic-free synthesis of size-controlled ncGe in a GeO x matrix as well as freestanding ncGe, via the thermal disproportionation of GeO prepared from thermally induced dehydration of Ge(OH) 2 . The photothermal effect of ncGe, quantified by Raman spectroscopy, is found to be size dependent and superior to ncSi. This advance suggests applications of ncGe in photothermal therapy, desalination, and catalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. High duty cycle far-infrared germanium lasers

    NASA Astrophysics Data System (ADS)

    Chamberlin, Danielle Russell

    The effects of crystal geometry, heat transport, and optics on high duty cycle germanium hole population inversion lasers are investigated. Currently the laser's low duty cycle limits its utility for many applications. This low duty cycle is a result of the combination of the large electrical input power necessary and insufficient heat extraction. In order to achieve a continuous-wave device, the input power must be decreased and the cooling power increased. In order to improve laser efficiency and lower the input power, the effect of laser crystal geometry on the electric field uniformity is considered. Geometries with d/L>>1 or <<1 are shown to have improved electric field uniformity, where d is the distance between electrical contacts and L is the length in the direction of the Hall electric field. A geometry with d/L>>1 is shown to decrease the threshold voltage for lasing. Laser crystals with the traditional contact geometry have been compared to a new, planar contact design with both electrical contacts on the same side of the laser crystal. This new geometry provides a large d/L ratio while also allowing effective heat sinking. A pure, single-crystal silicon heat sink is developed for planar contact design lasers, which improves the duty cycle tenfold. For the traditional contact design, copper heat sinks are developed that demonstrate cooling powers up to 10 Watts. The effects of thermal conductivity, surface area, and interfacial thermal resistance on the heat transport are compared. To improve the cavity quality, thereby allowing for smaller crystal volumes, new optical designs are investigated. A vertical cavity structure is demonstrated for the planar contact structure using strontium titanate single crystals as mirrors. A mode-selecting cavity is implemented for the traditional contact design. The spectra of small-volume, near-threshold lasers are measured. In contrast to the emission of larger lasers, these lasers emit within narrow frequency peaks

  11. Extreme ultraviolet probing of nonequilibrium dynamics in high energy density germanium

    NASA Astrophysics Data System (ADS)

    Principi, E.; Giangrisostomi, E.; Mincigrucci, R.; Beye, M.; Kurdi, G.; Cucini, R.; Gessini, A.; Bencivenga, F.; Masciovecchio, C.

    2018-05-01

    Intense femtosecond infrared laser pulses induce a nonequilibrium between thousands of Kelvin hot valence electrons and room-temperature ions in a germanium sample foil. The evolution of this exotic state of matter is monitored with time-resolved extreme ultraviolet absorption spectroscopy across the Ge M2 ,3 edge (≃30 eV ) using the FERMI free-electron laser. We analyze two distinct regimes in the ultrafast dynamics in laser-excited Ge: First, on a subpicosecond time scale, the electron energy distribution thermalizes to an extreme temperature unreachable in equilibrium solid germanium; then, during the following picoseconds, the lattice reacts strongly altering the electronic structure and resulting in melting to a metallic state alongside a breakdown of the local atomic order. Data analysis, based on a hybrid approach including both numerical and analytical calculations, provides an estimation of the electron and ion temperatures, the electron density of states, the carrier-phonon relaxation time, as well as the carrier density and lattice heat capacity under those extreme nonequilibrium conditions. Related structural anomalies, such as the occurrence of a transient low-density liquid phase and the possible drop in lattice heat capacity are discussed.

  12. Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

    DOE PAGES

    Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.; ...

    2017-06-01

    Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

  13. Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zurch, Michael; Chang, Hung -Tzu; Borja, Lauren J.

    Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M 4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10 20 cm –3. Separate electron and hole relaxation times are observedmore » as a function of hot carrier energies. A first-order electron and hole decay of ~1 ps suggests a Shockley–Read–Hall recombination mechanism. Furthermore, the simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.« less

  14. Grafting of Oligo(ethylene glycol)-Functionalized Calix[4]arene-Tetradiazonium Salts for Antifouling Germanium and Gold Surfaces.

    PubMed

    Blond, Pascale; Mattiuzzi, Alice; Valkenier, Hennie; Troian-Gautier, Ludovic; Bergamini, Jean-François; Doneux, Thomas; Goormaghtigh, Erik; Raussens, Vincent; Jabin, Ivan

    2018-05-29

    Biosensors that can determine protein concentration and structure are highly desired for biomedical applications. For the development of such biosensors, the use of Fourier transform infrared (FTIR) spectroscopy with the attenuated internal total reflection (ATR) configuration is particularly attractive, but it requires appropriate surface functionalization of the ATR optical element. Indeed, the surface has to specifically interact with a target protein in close contact with the optical element and must display antifouling properties to prevent nonspecific adsorption of other proteins. Here, we report robust monolayers of calix[4]arenes bearing oligo(ethylene glycol) (oEG) chains, which were grafted on germanium and gold surfaces via their tetradiazonium salts. The formation of monolayers of oEGylated calix[4]arenes was confirmed by AFM, IR, and contact angle measurements. The antifouling properties of these modified surfaces were studied by ATR-FTIR spectroscopy and fluorescence microscopy, and the nonspecific absorption of bovine serum albumin was found to be reduced by 85% compared to that of unmodified germanium. In other words, the organic coating by oEGylated calix[4]arenes provides remarkable antifouling properties, opening the way for the design of germanium- or gold-based biosensors.

  15. Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

    PubMed

    Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

    2014-05-01

    We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

  16. [Pure Amnesia].

    PubMed

    Tagawa, Koichi; Tokida, Haruki

    2017-06-01

    Pure amnesia (amnesic syndrome) is an organic brain syndrome characterized by impairment in episodic memory, with either an anterograde or sometimes retrograde loss of memories. Although episodic memory is impaired, semantic memory, immediate memory, and procedural memory are preserved. The Papez circuit is a network of nerve fibers and nerve centers that starts and ends in the hippocampus travelling by way of the fornix, mammillary bodies, anterior thalamic nuclei, cingulate gyrus, and parahippocampal gyrus. A lesion restricted to this circuit often produces pure amnesia. Regions concerned with the Yakovlev circuit also have an important role in memory. Clinical cases of pure amnesia caused by cerebrovascular disease presented following brain imaging and resulted from various different lesions. The cases identified were predominantly thalamic amnesia and hippocampal amnesia. Thalamic amnesia often resulted from an infarction in the territory of the thalamotuberal artery and paramedian thalamic artery although thalamic hemorrhage in medial portion of thalamus also produced pure amnesia. Hippocampal amnesia usually occurred following an infarction in the temporal branches of posterior cerebral artery. Cases of retrosplenial amnesia caused by subcortical hematoma and infarction in the retrosplenial region are also described. In addition, cases of pure amnesia resulting from an infarction in the fornix, mammillary body hemorrhage, and caudate hemorrhage are also shown.

  17. Defense Mechanisms in "Pure" Anxiety and "Pure" Depressive Disorders.

    PubMed

    Colovic, Olga; Lecic Tosevski, Dusica; Perunicic Mladenovic, Ivana; Milosavljevic, Maja; Munjiza, Ana

    2016-10-01

    Our study was intended to test whether there are any differences in the way defense mechanisms are used by patients suffering from pure anxiety and those with pure depressive disorders. The sample size was as follows: depressive disorders without psychotic symptoms 30, anxiety disorders 30, and the healthy control group 30. The assessment of defense mechanisms was made using the DSQ-40 questionnaire. Our findings show that "pure" anxiety disorders differ from "pure" depressive disorders only in the use of immature defense mechanisms. The group with depressive disorders was significantly more prone to use immature defense mechanisms than the group with anxiety disorders (p = 0.005), primarily projection (p = 0.001) and devaluation (p = 0.003). These defense mechanisms may therefore be used both to differentiate between anxiety and depressive disorders and also to determine which symptoms (anxiety or depressive disorders) are dominant at any given stage of treatment.

  18. Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Napoli, D. R., E-mail: daniel.r.napoli@lnl.infn.it; Maggioni, G., E-mail: maggioni@lnl.infn.it; Carturan, S.

    2016-07-07

    High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

  19. US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dreyer, J.; Burks, M.; Ham, Y.

    2015-10-20

    This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results frommore » PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.« less

  20. High-capacity nanostructured germanium-containing materials and lithium alloys thereof

    DOEpatents

    Graetz, Jason A.; Fultz, Brent T.; Ahn, Channing; Yazami, Rachid

    2010-08-24

    Electrodes comprising an alkali metal, for example, lithium, alloyed with nanostructured materials of formula Si.sub.zGe.sub.(z-1), where 0germanium exhibit a combination of improved capacities, cycle lives, and/or cycling rates compared with similar electrodes made from graphite. These electrodes are useful as anodes for secondary electrochemical cells, for example, batteries and electrochemical supercapacitors.

  1. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

    NASA Astrophysics Data System (ADS)

    Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

    2016-09-01

    We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

  2. The isotope composition of inorganic germanium in seawater and deep sea sponges

    NASA Astrophysics Data System (ADS)

    Guillermic, Maxence; Lalonde, Stefan V.; Hendry, Katharine R.; Rouxel, Olivier J.

    2017-09-01

    Although dissolved concentrations of germanium (Ge) and silicon (Si) in modern seawater are tightly correlated, uncertainties still exist in the modern marine Ge cycle. Germanium stable isotope systematics in marine systems should provide additional constraints on marine Ge sources and sinks, however the low concentration of Ge in seawater presents an analytical challenge for isotopic measurement. Here, we present a new method of pre-concentration of inorganic Ge from seawater which was applied to measure three Ge isotope profiles in the Southern Ocean and deep seawater from the Atlantic and Pacific Oceans. Germanium isotopic measurements were performed on Ge amounts as low as 2.6 ng using a double-spike approach and a hydride generation system coupled to a MC-ICP-MS. Germanium was co-precipitated with iron hydroxide and then purified through anion-exchange chromatography. Results for the deep (i.e. >1000 m depth) Pacific Ocean off Hawaii (nearby Loihi Seamount) and the deep Atlantic off Bermuda (BATS station) showed nearly identical δ74/70Ge values at 3.19 ± 0.31‰ (2SD, n = 9) and 2.93 ± 0.10‰ (2SD, n = 2), respectively. Vertical distributions of Ge concentration and isotope composition in the deep Southern Ocean for water depth > 1300 m yielded an average δ74/70Ge = 3.13 ± 0.25‰ (2SD, n = 14) and Ge/Si = 0.80 ± 0.09 μmol/mol (2SD, n = 12). Significant variations in δ74/70Ge, from 2.62 to 3.71‰, were measured in the first 1000 m in one station of the Southern Ocean near Sars Seamount in the Drake Passage, with the heaviest values measured in surface waters. Isotope fractionation by diatoms during opal biomineralization may explain the enrichment in heavy isotopes for both Ge and Si in surface seawater. However, examination of both oceanographic parameters and δ74/70Ge values suggest also that water mass mixing and potential contribution of shelf-derived Ge also could contribute to the variations. Combining these results with new Ge isotope data

  3. Multi-element germanium detectors for synchrotron applications

    DOE PAGES

    Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; ...

    2018-04-27

    In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

  4. Multi-element germanium detectors for synchrotron applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.

    In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

  5. TIGRESS highly-segmented high-purity germanium clover detector

    NASA Astrophysics Data System (ADS)

    Scraggs, H. C.; Pearson, C. J.; Hackman, G.; Smith, M. B.; Austin, R. A. E.; Ball, G. C.; Boston, A. J.; Bricault, P.; Chakrawarthy, R. S.; Churchman, R.; Cowan, N.; Cronkhite, G.; Cunningham, E. S.; Drake, T. E.; Finlay, P.; Garrett, P. E.; Grinyer, G. F.; Hyland, B.; Jones, B.; Leslie, J. R.; Martin, J.-P.; Morris, D.; Morton, A. C.; Phillips, A. A.; Sarazin, F.; Schumaker, M. A.; Svensson, C. E.; Valiente-Dobón, J. J.; Waddington, J. C.; Watters, L. M.; Zimmerman, L.

    2005-05-01

    The TRIUMF-ISAC Gamma-Ray Escape-Suppressed Spectrometer (TIGRESS) will consist of twelve units of four high-purity germanium (HPGe) crystals in a common cryostat. The outer contacts of each crystal will be divided into four quadrants and two lateral segments for a total of eight outer contacts. The performance of a prototype HPGe four-crystal unit has been investigated. Integrated noise spectra for all contacts were measured. Energy resolutions, relative efficiencies for both individual crystals and for the entire unit, and peak-to-total ratios were measured with point-like sources. Position-dependent performance was measured by moving a collimated source across the face of the detector.

  6. Infrared absorption study of neutron-transmutation-doped germanium

    NASA Technical Reports Server (NTRS)

    Park, I. S.; Haller, E. E.

    1988-01-01

    Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

  7. The Contrast in Outgassing of Germanium Between Shergottites and Nakhlites

    NASA Technical Reports Server (NTRS)

    Yang, S.; Humayun, M.; Righter, K.; Peslier, A. H.

    2018-01-01

    Final Paper and not the abstract is attached. Introduction: Germanium is generally thought to follow Si in its geochemical behavior, but little data has existed to rigorously understand the behavior of Ge in the Martian mantle. Germanium is known to be more siderophile than Si, and its partitioning into the martian core has been studied by. Typical abundances in igneous martian meteorites range from 0.5-3 ppm, a larger range than what is observed in terrestrial basalts (1.5 +/- 0.1 ppm). In situ measurements by the MER and MSL rovers have revealed a surprisingly large range in Ge abundances in surface rocks (30-650 ppm), but many igneous rocks and soils are shown to have greater than 30 ppm Ge (the detection limit of the APXS). Recently, reported that shergottite minerals showed a depletion of Ge with increasing fractionation, while nakhlites and chassignites exhibited Ge behavior compatible with closed system igneous differentiation. They interpreted their observations as tentatively indicating volcanic outgassing of Ge from shergottites (but not from nakhlite-chassignites) with recondensation of the Ge vapor into soils and breccias. Recent experimental studies show that Ge is significantly volatile from magmas. In this study, we followed up on those results by analyzing minerals in five nakhlites and five shergottites by laser ablation ICP-MS (LA-ICP-MS). See Attached

  8. Bioavailable concentrations of germanium and rare earth elements in soil as affected by low molecular weight organic acids and root exudates

    NASA Astrophysics Data System (ADS)

    Wiche, Oliver; Székely, Balázs; Kummer, Nicolai-Alexeji; Heinemann, Ute; Tesch, Silke; Heilmeier, Hermann

    2014-05-01

    Availability of elements in soil to plant is generally dependent on the solubility and mobility of elements in soil solution which is controlled by soil, elemental properties and plant-soil interactions. Low molecular organic acids or other root exudates may increase mobility and availability of certain elements for plants as an effect of lowering pH in the rhizosphere and complexation. However, these processes take place in a larger volume in soil, therefore to understand their nature, it is also important to know in which layers of the soil what factors modify these processes. In this work the influence of citric acid and root exudates of white lupin (Lupinus albus L.) on bioavailable concentrations of germanium, lanthan, neodymium, gadolinium and erbium in soil solution and uptake in root and shoot of rape (Brassica napus L.), comfrey (Symphytum officinale L.), common millet (Panicum milliaceum L.) and oat (Avena sativa L.) was investigated. Two different pot experiments were conducted: (1) the mentioned plant species were treated with nutrient solutions containing various amount of citric acid; (2) white lupin was cultivated in mixed culture (0 % lupin, 33 % lupin) with oat (Avena sativa L.) and soil solution was obtained by plastic suction cups placed at various depths. As a result, addition of citric acid significantly increased germanium concentrations in plant tissue of comfrey and rape and increased translocation of germanium, lanthan, neodymium, gadolinium and erbium from root to shoot. The cultivation of white lupin in mixed culture with oat led to significantly higher concentrations of germanium and increasing concentrations of lanthan, neodymium, gadolinium and erbium in soil solution and aboveground plant tissue. In these pots concentrations of citric acid in soil solution were significantly higher than in the control. The results show, that low molecular organic acids exuded by plant roots are of great importance for the mobilization of germanium

  9. EVALUATION OF THE IMPACT OF THE DEFENSE WASTE PROCESSING FACILITY (DWPF) LABORATORY GERMANIUM OXIDE USE ON RECYCLE TRANSFERS TO THE H-TANK FARM

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jantzen, C.; Laurinat, J.

    2011-08-15

    When processing High Level Waste (HLW) glass, the Defense Waste Processing Facility (DWPF) cannot wait until the melt or waste glass has been made to assess its acceptability, since by then no further changes to the glass composition and acceptability are possible. Therefore, the acceptability decision is made on the upstream feed stream, rather than on the downstream melt or glass product. This strategy is known as 'feed forward statistical process control.' The DWPF depends on chemical analysis of the feed streams from the Sludge Receipt and Adjustment Tank (SRAT) and the Slurry Mix Evaporator (SME) where the frit plusmore » adjusted sludge from the SRAT are mixed. The SME is the last vessel in which any chemical adjustments or frit additions can be made. Once the analyses of the SME product are deemed acceptable, the SME product is transferred to the Melter Feed Tank (MFT) and onto the melter. The SRAT and SME analyses have been analyzed by the DWPF laboratory using a 'Cold Chemical' method but this dissolution did not adequately dissolve all the elemental components. A new dissolution method which fuses the SRAT or SME product with cesium nitrate (CsNO{sub 3}), germanium (IV) oxide (GeO{sub 2}) and cesium carbonate (Cs{sub 2}CO{sub 3}) into a cesium germanate glass at 1050 C in platinum crucibles has been developed. Once the germanium glass is formed in that fusion, it is readily dissolved by concentrated nitric acid (about 1M) to solubilize all the elements in the SRAT and/or SME product for elemental analysis. When the chemical analyses are completed the acidic cesium-germanate solution is transferred from the DWPF analytic laboratory to the Recycle Collection Tank (RCT) where the pH is increased to {approx}12 M to be released back to the tank farm and the 2H evaporator. Therefore, about 2.5 kg/yr of GeO{sub 2}/year will be diluted into 1.4 million gallons of recycle. This 2.5 kg/yr of GeO{sub 2} may increase to 4 kg/yr when improvements are implemented to

  10. SPECTROPHOTOMETRIC DETERMINATION OF ULTRA-SMALL QUANTITIES OF NICKEL IN INDIUM (in Russian)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Peshkova, V.M.; Bochkova, V.M.; Astakhova, E.K.

    1961-09-01

    alpha -Benzil doxime permits the determination of nickel by measuring optical density in the region of maximum absortption (at 275 m mu ), after the reagent excess is removed by washing the extract with alkali. Conditions were found for the spectrophotometric determination of ultra-small quantities (down to 0.005 gamma ) of nickel with alpha -benzil dioxime in the soultion of its pure salt, in the presence of cobalt and copper. A method was developed for the determination of traces of nickel down to 5 x 10 /sup -7%/ in metallic indium. The reproducibility of method is +25%. (auth)

  11. Pure-iron/iron-based-alloy hybrid soft magnetic powder cores compacted at ultra-high pressure

    NASA Astrophysics Data System (ADS)

    Saito, Tatsuya; Tsuruta, Hijiri; Watanabe, Asako; Ishimine, Tomoyuki; Ueno, Tomoyuki

    2018-04-01

    We developed Fe/FeSiAl soft magnetic powder cores (SMCs) for realizing the miniaturization and high efficiency of an electromagnetic conversion coil in the high-frequency range (˜20 kHz). We found that Fe/FeSiAl SMCs can be formed with a higher density under higher compaction pressure than pure-iron SMCs. These SMCs delivered a saturation magnetic flux density of 1.7 T and iron loss (W1/20k) of 158 kW/m3. The proposed SMCs exhibited similar excellent characteristics even in block shapes, which are closer to the product shapes.

  12. Time-resolved measurements of the angular distribution of lasing at 23.6 nm in Ne-like germanium

    NASA Astrophysics Data System (ADS)

    Kodama, R.; Neely, D.; Dwivedi, L.; Key, M. H.; Krishnan, J.; Lewis, C. L. S.; O'Neill, D.; Norreys, P.; Pert, G. J.; Ramsden, S. A.; Tallents, G. J.; Uhomoibhi, J.; Zhang, J.

    1992-06-01

    The time dependence of the angular distribution of soft X-ray lasing at 23.6 nm in Ne-like germanium has been measured using a streak camera. Slabs of germanium have been irradiated over ≈ 22 mm length × 100 μm width with three line focussed beams of the SERC Rutherford Appleton Laboratory VULCAN laser at 1.06 μm wavelength. The laser beam sweeps in time towards the target surface plane and the divergence broadens with time. The change of the peak intensity pointing and the broadening of the profile with time are consistent with expectations of the time dependence of refraction and divergence due to density gradients in the plasma.

  13. Nanoporous membrane device for ultra high heat flux thermal management

    NASA Astrophysics Data System (ADS)

    Hanks, Daniel F.; Lu, Zhengmao; Sircar, Jay; Salamon, Todd R.; Antao, Dion S.; Bagnall, Kevin R.; Barabadi, Banafsheh; Wang, Evelyn N.

    2018-02-01

    High power density electronics are severely limited by current thermal management solutions which are unable to dissipate the necessary heat flux while maintaining safe junction temperatures for reliable operation. We designed, fabricated, and experimentally characterized a microfluidic device for ultra-high heat flux dissipation using evaporation from a nanoporous silicon membrane. With 100 nm diameter pores, the membrane can generate high capillary pressure even with low surface tension fluids such as pentane and R245fa. The suspended ultra-thin membrane structure facilitates efficient liquid transport with minimal viscous pressure losses. We fabricated the membrane in silicon using interference lithography and reactive ion etching and then bonded it to a high permeability silicon microchannel array to create a biporous wick which achieves high capillary pressure with enhanced permeability. The back side consisted of a thin film platinum heater and resistive temperature sensors to emulate the heat dissipation in transistors and measure the temperature, respectively. We experimentally characterized the devices in pure vapor-ambient conditions in an environmental chamber. Accordingly, we demonstrated heat fluxes of 665 ± 74 W/cm2 using pentane over an area of 0.172 mm × 10 mm with a temperature rise of 28.5 ± 1.8 K from the heated substrate to ambient vapor. This heat flux, which is normalized by the evaporation area, is the highest reported to date in the pure evaporation regime, that is, without nucleate boiling. The experimental results are in good agreement with a high fidelity model which captures heat conduction in the suspended membrane structure as well as non-equilibrium and sub-continuum effects at the liquid-vapor interface. This work suggests that evaporative membrane-based approaches can be promising towards realizing an efficient, high flux thermal management strategy over large areas for high-performance electronics.

  14. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    PubMed

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  15. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire

    PubMed Central

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C.; Luo, Tengfei

    2015-01-01

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics. PMID:26568511

  16. Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p + n Diodes

    NASA Astrophysics Data System (ADS)

    Sammak, Amir; Qi, Lin; Nanver, Lis K.

    2015-12-01

    The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p + n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to an Al interconnect metallization. The Ge is grown in oxide windows to the Si wafer and covered by a B and gallium (Ga) layer stack (PureGaB) composed of about a nanometer of Ga for forming the p + Ge region and 10 nm of B as an interdiffusion barrier to the Al. To form contact windows, the side-wall oxide is etched away, exposing a small tip of the Ge perimeter to Al that from this point travels about 5 μm into the bulk Ge crystal. In this process, Ge and Si materials are displaced, forming Ge-filled V-grooves at the Si surface. The Al coalesces in grains. This process is studied here by high-resolution cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy that confirm the purities of the Ge and Al grains. Diodes are fabricated with different geometries and statistical current-voltage characterization reveals a spread that can be related to across-the-wafer variations in the contact processing. The I- V behavior is characterized by low dark current, low contact resistance, and breakdown voltages that are suitable for operation in avalanching modes. The restricted access to the Ge of the Al inducing the Ge and Si material transport does not destroy the very good electrical characteristics typical of PureGaB Ge-on-Si diodes.

  17. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    NASA Astrophysics Data System (ADS)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  18. Measurement of the quantum conductance of germanium by an electrochemical scanning tunneling microscope break junction based on a jump-to-contact mechanism.

    PubMed

    Xie, Xufen; Yan, Jiawei; Liang, Jinghong; Li, Jijun; Zhang, Meng; Mao, Bingwei

    2013-10-01

    We present quantum conductance measurements of germanium by means of an electrochemical scanning tunneling microscope (STM) break junction based on a jump-to-contact mechanism. Germanium nanowires between a platinum/iridium tip and different substrates were constructed to measure the quantum conductance. By applying appropriate potentials to the substrate and the tip, the process of heterogeneous contact and homogeneous breakage was realized. Typical conductance traces exhibit steps at 0.025 and 0.05 G0. The conductance histogram indicates that the conductance of germanium nanowires is located between 0.02 and 0.15 G0 in the low-conductance region and is free from the influence of substrate materials. However, the distribution of conductance plateaus is too discrete to display distinct peaks in the conductance histogram of the high-conductance region. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

    PubMed

    Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

    2013-07-31

    Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

  20. SU-C-201-02: Quantitative Small-Animal SPECT Without Scatter Correction Using High-Purity Germanium Detectors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gearhart, A; Peterson, T; Johnson, L

    2015-06-15

    Purpose: To evaluate the impact of the exceptional energy resolution of germanium detectors for preclinical SPECT in comparison to conventional detectors. Methods: A cylindrical water phantom was created in GATE with a spherical Tc-99m source in the center. Sixty-four projections over 360 degrees using a pinhole collimator were simulated. The same phantom was simulated using air instead of water to establish the true reconstructed voxel intensity without attenuation. Attenuation correction based on the Chang method was performed on MLEM reconstructed images from the water phantom to determine a quantitative measure of the effectiveness of the attenuation correction. Similarly, a NEMAmore » phantom was simulated, and the effectiveness of the attenuation correction was evaluated. Both simulations were carried out using both NaI detectors with an energy resolution of 10% FWHM and Ge detectors with an energy resolution of 1%. Results: Analysis shows that attenuation correction without scatter correction using germanium detectors can reconstruct a small spherical source to within 3.5%. Scatter analysis showed that for standard sized objects in a preclinical scanner, a NaI detector has a scatter-to-primary ratio between 7% and 12.5% compared to between 0.8% and 1.5% for a Ge detector. Preliminary results from line profiles through the NEMA phantom suggest that applying attenuation correction without scatter correction provides acceptable results for the Ge detectors but overestimates the phantom activity using NaI detectors. Due to the decreased scatter, we believe that the spillover ratio for the air and water cylinders in the NEMA phantom will be lower using germanium detectors compared to NaI detectors. Conclusion: This work indicates that the superior energy resolution of germanium detectors allows for less scattered photons to be included within the energy window compared to traditional SPECT detectors. This may allow for quantitative SPECT without implementing

  1. Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

    NASA Astrophysics Data System (ADS)

    Ghosh, Arindam

    Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry

  2. A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications

    NASA Astrophysics Data System (ADS)

    Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng

    2018-02-01

    A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

  3. Strategies for single-point diamond machining a large format germanium blazed immersion grating

    NASA Astrophysics Data System (ADS)

    Montesanti, R. C.; Little, S. L.; Kuzmenko, P. J.; Bixler, J. V.; Jackson, J. L.; Lown, J. G.; Priest, R. E.; Yoxall, B. E.

    2016-07-01

    A large format germanium immersion grating was flycut with a single-point diamond tool on the Precision Engineering Research Lathe (PERL) at the Lawrence Livermore National Laboratory (LLNL) in November - December 2015. The grating, referred to as 002u, has an area of 59 mm x 67 mm (along-groove and cross-groove directions), line pitch of 88 line/mm, and blaze angle of 32 degree. Based on total groove length, the 002u grating is five times larger than the previous largest grating (ZnSe) cut on PERL, and forty-five times larger than the previous largest germanium grating cut on PERL. The key risks associated with cutting the 002u grating were tool wear and keeping the PERL machine running uninterrupted in a stable machining environment. This paper presents the strategies employed to mitigate these risks, introduces pre-machining of the as-etched grating substrate to produce a smooth, flat, damage-free surface into which the grooves are cut, and reports on trade-offs that drove decisions and experimental results.

  4. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

    NASA Astrophysics Data System (ADS)

    Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-01

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  5. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    PubMed

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  6. Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

    PubMed

    Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

    2018-04-09

    Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

  7. On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

    NASA Astrophysics Data System (ADS)

    Darken, L.

    1994-02-01

    The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood.

  8. Atomic Scale Structure of (001) Hydrogen-Induced Platelets in Germanium

    NASA Astrophysics Data System (ADS)

    David, Marie-Laure; Pizzagalli, Laurent; Pailloux, Fréderic; Barbot, Jean François

    2009-04-01

    An accurate characterization of the structure of hydrogen-induced platelets is a prerequisite for investigating both hydrogen aggregation and formation of larger defects. On the basis of quantitative high resolution transmission electron microscopy experiments combined with extensive first principles calculations, we present a model for the atomic structure of (001) hydrogen-induced platelets in germanium. It involves broken Ge-Ge bonds in the [001] direction that are dihydride passivated, vacancies, and trapped H2 molecules, showing that the species involved in platelet formation depend on the habit plane. This model explains all previous experimental observations.

  9. Three holes bound to a double acceptor - Be(+) in germanium

    NASA Technical Reports Server (NTRS)

    Haller, E. E.; Mcmurray, R. E., Jr.; Falicov, L. M.; Haegel, N. M.; Hansen, W. L.

    1983-01-01

    A double acceptor binding three holes has been observed for the first time with photoconductive far-infrared spectroscopy in beryllium-doped germanium single crystals. This new center, Be(+), has a hole binding energy of about 5 meV and is only present when free holes are generated by ionization of either neutral shallow acceptors or neutral Be double acceptors. The Be(+) center thermally ionizes above 4 K. It disappears at a uniaxial stress higher than about a billion dyn/sq cm parallel to (111) as a result of the lifting of the valence-band degeneracy.

  10. Refractive Index of Silicon and Germanium and Its Wavelength and Temperature Derivatives.

    DTIC Science & Technology

    1979-03-01

    of a misnomer and, although Clemens Winkler is cred- ited with the discovery of the element in 1886, germanium has become an element of interest in...rather small in covalent semiconductors like Si and Ge, it increases, however, with increasing polarity. Both the radio -frequency mea- surement and...temperature region 250-480 K, but nonlinearity progressively predominates at lower temperatures, as seen from figure 7. Lukes and Schmidt [18] studied

  11. Feasibility study of SiGHT: a novel ultra low background photosensor for low temperature operation

    DOE PAGES

    Wang, Y.; Fan, A.; Fiorillo, G.; ...

    2017-02-27

    Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

  12. Lithium effects on the mechanical and electronic properties of germanium nanowires

    NASA Astrophysics Data System (ADS)

    González-Macías, A.; Salazar, F.; Miranda, A.; Trejo-Baños, A.; Pérez, L. A.; Carvajal, E.; Cruz-Irisson, M.

    2018-04-01

    Semiconductor nanowire arrays promise rapid development of a new generation of lithium (Li) batteries because they can store more Li atoms than conventional crystals due to their large surface areas. During the charge-discharge process, the electrodes experience internal stresses that fatigue the material and limit the useful life of the battery. The theoretical study of electronic and mechanical properties of lithiated nanowire arrays allows the designing of electrode materials that could improve battery performance. In this work, we present a density functional theory study of the electronic band structure, formation energy, binding energy, and Young’s modulus (Y) of hydrogen passivated germanium nanowires (H-GeNWs) grown along the [111] and [001] crystallographic directions with surface and interstitial Li atoms. The results show that the germanium nanowires (GeNWs) with surface Li atoms maintain their semiconducting behavior but their energy gap size decreases when the Li concentration grows. In contrast, the GeNWs can have semiconductor or metallic behavior depending on the concentration of the interstitial Li atoms. On the other hand, Y is an indicator of the structural changes that GeNWs suffer due to the concentration of Li atoms. For surface Li atoms, Y stays almost constant, whereas for interstitial Li atoms, the Y values indicate important structural changes in the GeNWs.

  13. Pure-quartic solitons

    PubMed Central

    Blanco-Redondo, Andrea; Martijn, de Sterke C.; Sipe, J.E.; Krauss, Thomas F.; Eggleton, Benjamin J.; Husko, Chad

    2016-01-01

    Temporal optical solitons have been the subject of intense research due to their intriguing physics and applications in ultrafast optics and supercontinuum generation. Conventional bright optical solitons result from the interaction of anomalous group-velocity dispersion and self-phase modulation. Here we experimentally demonstrate a class of bright soliton arising purely from the interaction of negative fourth-order dispersion and self-phase modulation, which can occur even for normal group-velocity dispersion. We provide experimental and numerical evidence of shape-preserving propagation and flat temporal phase for the fundamental pure-quartic soliton and periodically modulated propagation for the higher-order pure-quartic solitons. We derive the approximate shape of the fundamental pure-quartic soliton and discover that is surprisingly Gaussian, exhibiting excellent agreement with our experimental observations. Our discovery, enabled by precise dispersion engineering, could find applications in communications, frequency combs and ultrafast lasers. PMID:26822758

  14. Compliance of Ultra-Orthodox and secular pedestrians with traffic lights in Ultra-Orthodox and secular locations.

    PubMed

    Rosenbloom, Tova; Shahar, Amit; Perlman, Amotz

    2008-11-01

    Following a previous study that revealed the disobedience of Ultra-Orthodox citizens, as compared to secular citizens, of traffic lights at crosswalks, the present study examined the road habits of 995 Ultra-Orthodox and secular pedestrians in neighboring Ultra-Orthodox and secular cities. Using an observation grid designed specially for this study, the pedestrians were observed at two crosswalks--one in an Ultra-Orthodox city and one in a secular city--as far as similar traffic parameters, using a logistic regression. The tendency to cross on a red light was assessed as a function of estimated age, gender, religiosity, location (religious/secular), the duration of the red light, the number of vehicles crossing and the number of pedestrians waiting at the curb. Ultra-Orthodox pedestrians committed more violations than secular pedestrians did, and there were more road violations in the Ultra-Orthodox location than there were in the secular location. Fewer traffic violations were committed by "local" pedestrians (Ultra-Orthodox pedestrians in the Ultra-Orthodox location and secular pedestrians in the secular location) than by "foreigners" (Ultra-Orthodox pedestrians in the secular location and secular pedestrians in the Ultra-Orthodox location). The odds of crossing on a red light decreased as a function of both the number of people waiting at the curb and the number of vehicles. Consistent with previous research, males crossed on red much more than females did, regardless of religiosity and location. Our discussion focuses on theoretical and practical explanations of the findings.

  15. Effect of germanium dioxide on growth of Spirulina platensis

    NASA Astrophysics Data System (ADS)

    Cao, Ji-Xiang

    1996-12-01

    This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

  16. Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

    NASA Technical Reports Server (NTRS)

    Haller, E. E.; Itoh, K. M.; Beeman, J. W.

    1996-01-01

    Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

  17. Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

    2017-10-01

    We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

  18. A model for the effects of germanium on silica biomineralization in choanoflagellates

    PubMed Central

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  19. Controlled synthesis of germanium nanoparticles by nonthermal plasmas

    NASA Astrophysics Data System (ADS)

    Ahadi, Amir Mohammad; Hunter, Katharine I.; Kramer, Nicolaas J.; Strunskus, Thomas; Kersten, Holger; Faupel, Franz; Kortshagen, Uwe R.

    2016-02-01

    The size, composition, and crystallinity of plasma produced nanoparticles are crucial factors for their physical and chemical properties. Here, we investigate the role of the process gas composition, particularly the hydrogen (H2) flow rate, on germanium (Ge) nanoparticles synthesized from a chlorinated precursor by nonthermal plasma. We demonstrate that the gas composition can significantly change the nanoparticle size and also adjust the surface chemistry by altering the dominant reaction mechanisms. A red shift of the Ge-Clx infrared absorptions with increasing H2 flow indicates a weakening of the Ge-Clx bonds at high H2 content. Furthermore, by changing the gas composition, the nanoparticles microstructure can be controlled from mostly amorphous at high hydrogen flow to diamond cubic crystalline at low hydrogen flow.

  20. Molybdenum blue reaction and determination of phosphorus in waters containing arsenic, silicon, and germanium

    USGS Publications Warehouse

    Levine, H.; Rowe, J.J.; Grimaldi, F.S.

    1955-01-01

    Microgram amounts of phosphate are usually determined by the molybdenum blue reaction, but this reaction is not specific for phosphorus. The research established the range of conditions under which phosphate, arsenate, silicate, and germanate give the molybdenum blue reaction for differentiating these elements, and developed a method for the determination of phosphate in waters containing up to 10 p.p.m. of the oxides of germanium, arsenic(V), and silicon. With stannous chloride or 1-amino-2-naphthol-4-sulfonic acid as the reducing agent no conditions were found for distinguishing silicate from germanate and phosphate from arsenate. In the recommended procedure the phosphate is concentrated by coprecipitation on aluminum hydroxide, and coprecipitated arsenic, germanium, and silicon are volatilized by a mixture of hydrofluoric, hydrochloric, and hydrobromic acids prior to the determination of phosphate. The authors are able to report that the total phosphorus content of several samples of sea water from the Gulf of Mexico ranged from 0.018 to 0.059 mg. of phosphorus pentoxide per liter of water.

  1. Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

    NASA Astrophysics Data System (ADS)

    Mei, D.-M.; Wang, G.-J.; Mei, H.; Yang, G.; Liu, J.; Wagner, M.; Panth, R.; Kooi, K.; Yang, Y.-Y.; Wei, W.-Z.

    2018-03-01

    Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature (˜ 4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of ˜ 0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of ˜ 5 × 10^{-45} cm2 at a DM mass of ˜ 10 MeV/c2 and a DM-electron cross section of ˜ 5 × 10^{-46} cm2 at a DM mass of ˜ 1 MeV/c^2.

  2. Age-related changes in ultra-triathlon performances

    PubMed Central

    2012-01-01

    Background The age-related decline in performance has been investigated in swimmers, runners and triathletes. No study has investigated the age-related performance decline in ultra-triathletes. The purpose of this study was to analyse the age-related declines in swimming, cycling, running and overall race time for both Triple Iron ultra-triathlon (11.4-km swimming, 540-km cycling and 126.6-km running) and Deca Iron ultra-triathlon (38-km swimming, 1,800-km cycling and 420-km running). Methods The age and performances of 423 male Triple Iron ultra-triathletes and 119 male Deca Iron ultra-triathletes were analysed from 1992 to 2010 using regression analyses and ANOVA. Results The mean age of the finishers was significantly higher for Deca Iron ultra-triathletes (41.3 ± 3.1 years) compared to a Triple Iron ultra-triathletes (38.5 ± 3.3 years) (P < 0.05). For both ultra-distances, the fastest overall race times were achieved between the ages of 25 and 44 years. Deca Iron ultra-triathletes achieved the same level of performance in swimming and cycling between 25 and 54 years of age. Conclusions The magnitudes of age-related declines in performance in the three disciplines of ultra-triathlon differ slightly between Triple and Deca Iron ultra-triathlon. Although the ages of Triple Iron ultra-triathletes were on average younger compared to Deca Iron ultra-triathletes, the fastest race times were achieved between 25 and 44 years for both distances. Further studies should investigate the motivation and training of ultra-triathletes to gain better insights in ultra-triathlon performance. PMID:23849327

  3. Lowering the radioactivity of the photomultiplier tubes for the XENON1T dark matter experiment

    DOE PAGES

    Aprile, E.; Agostini, F.; Alfonsi, M.; ...

    2015-11-23

    The low-background, VUV-sensitive 3-inch diameter photomultiplier tube R11410 has been developed by Hamamatsu for dark matter direct detection experiments using liquid xenon as the target material. We present the results from the joint effort between the XENON collaboration and the Hamamatsu company to produce a highly radio-pure photosensor (version R11410-21) for the XENON1T dark matter experiment. After introducing the photosensor and its components, we show the methods and results of the radioactive contamination measurements of the individual materials employed in the photomultiplier production. We then discuss the adopted strategies to reduce the radioactivity of the various PMT versions. Finally, wemore » detail the results from screening 286 tubes with ultra-low background germanium detectors, as well as their implications for the expected electronic and nuclear recoil background of the XENON1T experiment.« less

  4. The Constellation-X Focal Plane Microcalorimeter Array: An NTD-Germanium Solution

    NASA Technical Reports Server (NTRS)

    Beeman, J.; Silver, E.; Bandler, S.; Schnopper, H.; Murray, S.; Madden, N.; Landis, D.; Haller, E. E.; Barbera, M.

    2001-01-01

    The hallmarks of Neutron Transmutation Doped (NTD) germanium cryogenic thermistors include high reliability, reproducibility, and long term stability of bulk carrier transport properties. Using micro-machined NTD Ge thermistors with integral 'flying' leads, we can now fabricate two-dimensional arrays that are built up from a series of stacked linear arrays. We believe that this modular approach of building, assembling, and perhaps replacing individual modules of detectors is essential to the successful fabrication and testing of large multi-element instruments. Details of construction are presented.

  5. Effect on magnetic properties of germanium encapsulated C60 fullerene

    NASA Astrophysics Data System (ADS)

    Umran, Nibras Mossa; Kumar, Ranjan

    2013-02-01

    Structural and electronic properties of Gen(n = 1-4) doped C60 fullerene are investigated with ab initio density functional theory calculations by using an efficient computer code, known as SIESTA. The pseudopotentials are constructed using a Trouiller-Martins scheme, to describe the interaction of valence electrons with the atomic cores. In endohedral doped embedding of more germanium atoms complexes we have seen that complexes are stable and thereafter cage break down. We have also investigated that binding energy, electronic affinity increases and magnetic moment oscillating behavior as the number of semiconductor atoms in C60 fullerene goes on increasing.

  6. Fabrication and characterization of a germanium nanowire light emitting diode

    NASA Astrophysics Data System (ADS)

    Greil, Johannes; Bertagnolli, Emmerich; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Lugstein, Alois

    2017-12-01

    In this letter, we demonstrate the feasibility of a germanium nanowire light emitting diode as a reasonable approach for downscaling of CMOS compatible light sources. We show room-temperature direct bandgap electroluminescence from axial p-n junction nanowire devices. The electron population in the Γ valley, necessary for direct bandgap emission, is achieved by high injection current densities. Carrier temperature is consistently found to be higher than the lattice temperature, indicating inhibited carrier cooling in small diameter wires. Strong polarization of the emission parallel to the nanowire axis is observed and attributed to dielectric contrast phenomena.

  7. What predicts performance in ultra-triathlon races? – a comparison between Ironman distance triathlon and ultra-triathlon

    PubMed Central

    Knechtle, Beat; Zingg, Matthias Alexander; Rosemann, Thomas; Stiefel, Michael; Rüst, Christoph Alexander

    2015-01-01

    Objective This narrative review summarizes recent intentions to find potential predictor variables for ultra-triathlon race performance (ie, triathlon races longer than the Ironman distance covering 3.8 km swimming, 180 km cycling, and 42.195 km running). Results from studies on ultra-triathletes were compared to results on studies on Ironman triathletes. Methods A literature search was performed in PubMed using the terms “ultra”, “triathlon”, and “performance” for the aspects of “ultra-triathlon”, and “Ironman”, “triathlon”, and “performance” for the aspects of “Ironman triathlon”. All resulting papers were searched for related citations. Results for ultra-triathlons were compared to results for Ironman-distance triathlons to find potential differences. Results Athletes competing in Ironman and ultra-triathlon differed in anthropometric and training characteristics, where both Ironmen and ultra-triathletes profited from low body fat, but ultra-triathletes relied more on training volume, whereas speed during training was related to Ironman race time. The most important predictive variables for a fast race time in an ultra-triathlon from Double Iron (ie, 7.6 km swimming, 360 km cycling, and 84.4 km running) and longer were male sex, low body fat, age of 35–40 years, extensive previous experience, a fast time in cycling and running but not in swimming, and origins in Central Europe. Conclusion Any athlete intending to compete in an ultra-triathlon should be aware that low body fat and high training volumes are highly predictive for overall race time. Little is known about the physiological characteristics of these athletes and about female ultra-triathletes. Future studies need to investigate anthropometric and training characteristics of female ultra-triathletes and what motivates women to compete in these races. Future studies need to correlate physiological characteristics such as maximum oxygen uptake (VO2max) with ultra

  8. Physiology and Pathophysiology in Ultra-Marathon Running

    PubMed Central

    Knechtle, Beat; Nikolaidis, Pantelis T.

    2018-01-01

    In this overview, we summarize the findings of the literature with regards to physiology and pathophysiology of ultra-marathon running. The number of ultra-marathon races and the number of official finishers considerably increased in the last decades especially due to the increased number of female and age-group runners. A typical ultra-marathoner is male, married, well-educated, and ~45 years old. Female ultra-marathoners account for ~20% of the total number of finishers. Ultra-marathoners are older and have a larger weekly training volume, but run more slowly during training compared to marathoners. Previous experience (e.g., number of finishes in ultra-marathon races and personal best marathon time) is the most important predictor variable for a successful ultra-marathon performance followed by specific anthropometric (e.g., low body mass index, BMI, and low body fat) and training (e.g., high volume and running speed during training) characteristics. Women are slower than men, but the sex difference in performance decreased in recent years to ~10–20% depending upon the length of the ultra-marathon. The fastest ultra-marathon race times are generally achieved at the age of 35–45 years or older for both women and men, and the age of peak performance increases with increasing race distance or duration. An ultra-marathon leads to an energy deficit resulting in a reduction of both body fat and skeletal muscle mass. An ultra-marathon in combination with other risk factors, such as extreme weather conditions (either heat or cold) or the country where the race is held, can lead to exercise-associated hyponatremia. An ultra-marathon can also lead to changes in biomarkers indicating a pathological process in specific organs or organ systems such as skeletal muscles, heart, liver, kidney, immune and endocrine system. These changes are usually temporary, depending on intensity and duration of the performance, and usually normalize after the race. In longer ultra

  9. Physiology and Pathophysiology in Ultra-Marathon Running.

    PubMed

    Knechtle, Beat; Nikolaidis, Pantelis T

    2018-01-01

    In this overview, we summarize the findings of the literature with regards to physiology and pathophysiology of ultra-marathon running. The number of ultra-marathon races and the number of official finishers considerably increased in the last decades especially due to the increased number of female and age-group runners. A typical ultra-marathoner is male, married, well-educated, and ~45 years old. Female ultra-marathoners account for ~20% of the total number of finishers. Ultra-marathoners are older and have a larger weekly training volume, but run more slowly during training compared to marathoners. Previous experience (e.g., number of finishes in ultra-marathon races and personal best marathon time) is the most important predictor variable for a successful ultra-marathon performance followed by specific anthropometric (e.g., low body mass index, BMI, and low body fat) and training (e.g., high volume and running speed during training) characteristics. Women are slower than men, but the sex difference in performance decreased in recent years to ~10-20% depending upon the length of the ultra-marathon. The fastest ultra-marathon race times are generally achieved at the age of 35-45 years or older for both women and men, and the age of peak performance increases with increasing race distance or duration. An ultra-marathon leads to an energy deficit resulting in a reduction of both body fat and skeletal muscle mass. An ultra-marathon in combination with other risk factors, such as extreme weather conditions (either heat or cold) or the country where the race is held, can lead to exercise-associated hyponatremia. An ultra-marathon can also lead to changes in biomarkers indicating a pathological process in specific organs or organ systems such as skeletal muscles, heart, liver, kidney, immune and endocrine system. These changes are usually temporary, depending on intensity and duration of the performance, and usually normalize after the race. In longer ultra

  10. Pure-tone Audiometer

    NASA Astrophysics Data System (ADS)

    Kapul, A. A.; Zubova, E. I.; Torgaev, S. N.; Drobchik, V. V.

    2017-08-01

    The research focuses on a pure-tone audiometer designing. The relevance of the study is proved by high incidence of an auditory analyser in older people and children. At first, the article provides information about subjective and objective audiometry methods. Secondly, we offer block-diagram and basic-circuit arrangement of device. We decided to base on STM32F407VG microcontroller and use digital pot in the function of attenuator. Third, we implemented microcontroller and PC connection. C programming language is used for microcontroller’s program and PC’s interface. Fourthly, we created the pure-tone audiometer prototype. In the future, we will implement the objective method ASSR in addition to pure-tone audiometry.

  11. Analysis of ultra-triathlon performances

    PubMed Central

    Lepers, Romuald; Knechtle, Beat; Knechtle, Patrizia; Rosemann, Thomas

    2011-01-01

    Despite increased interest in ultra-endurance events, little research has examined ultra-triathlon performance. The aims of this study were: (i) to compare swimming, cycling, running, and overall performances in three ultra-distance triathlons, double Ironman distance triathlon (2IMT) (7.6 km swimming, 360 km cycling, and 84.4 km running), triple Ironman distance triathlon (3IMT) (11.4 km, 540 km, and 126.6 km), and deca Ironman distance triathlon (10IMT) (38 km, 1800 km, and 420 km) and (ii) to examine the relationships between the 2IMT, 3IMT, and 10IMT performances to create predicted equations of the 10IMT performances. Race results from 1985 through 2009 were examined to identify triathletes who performed the three considered ultra-distances. In total, 73 triathletes (68 men and 5 women) were identified. The contribution of swimming to overall ultra-triathlon performance was lower than for cycling and running. Running performance was more important to overall performance for 2IMT and 3IMT compared with 10IMT The 2IMT and 3IMT performances were significantly correlated with 10IMT performances for swimming and cycling, but not for running. 10IMT total time performance might be predicted by the following equation: 10IMT race time (minutes) = 5885 + 3.69 × 3IMT race time (minutes). This analysis of human performance during ultra-distance triathlons represents a unique data set in the field of ultra-endurance events. Additional studies are required to determine the physiological and psychological factors associated with ultra-triathlon performance. PMID:24198579

  12. Pure electronic metal-insulator transition at the interface of complex oxides

    DOE PAGES

    Meyers, D.; Liu, Jian; Freeland, J. W.; ...

    2016-06-21

    We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less

  13. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    NASA Technical Reports Server (NTRS)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  14. Germanium ``hexa'' detector: production and testing

    NASA Astrophysics Data System (ADS)

    Sarajlić, M.; Pennicard, D.; Smoljanin, S.; Hirsemann, H.; Struth, B.; Fritzsch, T.; Rothermund, M.; Zuvic, M.; Lampert, M. O.; Askar, M.; Graafsma, H.

    2017-01-01

    Here we present new result on the testing of a Germanium sensor for X-ray radiation. The system is made of 3 × 2 Medipix3RX chips, bump-bonded to a monolithic sensor, and is called ``hexa''. Its dimensions are 45 × 30 mm2 and the sensor thickness was 1.5 mm. The total number of the pixels is 393216 in the matrix 768 × 512 with pixel pitch 55 μ m. Medipix3RX read-out chip provides photon counting read-out with single photon sensitivity. The sensor is cooled to -126°C and noise levels together with flat field response are measured. For -200 V polarization bias, leakage current was 4.4 mA (3.2 μ A/mm2). Due to higher leakage around 2.5% of all pixels stay non-responsive. More than 99% of all pixels are bump bonded correctly. In this paper we present the experimental set-up, threshold equalization procedure, image acquisition and the technique for bump bond quality estimate.

  15. Innovative remotely-controlled bending device for thin silicon and germanium crystals

    NASA Astrophysics Data System (ADS)

    De Salvador, D.; Carturan, S.; Mazzolari, A.; Bagli, E.; Bandiera, L.; Durighello, C.; Germogli, G.; Guidi, V.; Klag, P.; Lauth, W.; Maggioni, G.; Romagnoni, M.; Sytov, A.

    2018-04-01

    Steering of negatively charged particle beams below 1 GeV has demonstrated to be possible with thin bent silicon and germanium crystals. A newly designed mechanical holder was used for bending crystals, since it allows a remotely-controlled adjustment of crystal bending and compensation of unwanted torsion. Bent crystals were installed and tested at the MAMI Mainz MIcrotron to achieve steering of 0.855-GeV electrons at different bending radii. We report the description and characterization of the innovative bending device developed at INFN Laboratori Nazionali di Legnaro (LNL).

  16. Pure-rotational spectrometry: a vintage analytical method applied to modern breath analysis.

    PubMed

    Hrubesh, Lawrence W; Droege, Michael W

    2013-09-01

    Pure-rotational spectrometry (PRS) is an established method, typically used to study structures and properties of polar gas-phase molecules, including isotopic and isomeric varieties. PRS has also been used as an analytical tool where it is particularly well suited for detecting or monitoring low-molecular-weight species that are found in exhaled breath. PRS is principally notable for its ultra-high spectral resolution which leads to exceptional specificity to identify molecular compounds in complex mixtures. Recent developments using carbon aerogel for pre-concentrating polar molecules from air samples have extended the sensitivity of PRS into the part-per-billion range. In this paper we describe the principles of PRS and show how it may be configured in several different modes for breath analysis. We discuss the pre-concentration concept and demonstrate its use with the PRS analyzer for alcohols and ammonia sampled directly from the breath.

  17. Measurement of the low-energy quenching factor in germanium using an Y 88 / Be photoneutron source

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Scholz, B. J.; Chavarria, A. E.; Collar, J. I.

    2016-12-01

    We employ an 88Y/Be photoneutron source to derive the quenching factor for neutron-induced nuclear recoils in germanium, probing recoil energies from a few hundred eVnr to 8.5 keV nr. A comprehensive Monte Carlo simulation of our setup is compared to experimental data employing a Lindhard model with a free electronic energy loss k and an adiabatic correction for sub-keVnr nuclear recoils. The best fit k=0.179±0.001 obtained using a Monte Carlo Markov chain (MCMC) ensemble sampler is in good agreement with previous measurements, confirming the adequacy of the Lindhard model to describe the stopping of few-keV ions in germanium crystals at a temperaturemore » of ~77 K. This value of k corresponds to a quenching factor of 13.7% to 25.3% for nuclear recoil energies between 0.3 and 8.5 keV nr, respectively.« less

  18. DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

    NASA Technical Reports Server (NTRS)

    Li, S. B.; Choi, C. G.; Loo, R. Y.

    1985-01-01

    The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

  19. Fabrication of ultra-fine grained aluminium tubes by RTES technique

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jafarzadeh, H., E-mail: h.jafarzadeh@ut.ac.ir; Abrinia, K.

    Recently, repetitive tube expansion and shrinking have been exploited as a means for producing ultra-fine grained and nano-crystalline microstructures for magnesium alloy tubes. This method includes two different half-cycles and was based on pressing a tubular part through an angular channel die with two shear zones. Since the aluminium alloys are the most widely used materials in industries, in this study, repetitive tube expansion and shrinking as a new severe plastic deformation technique was applied to commercially pure aluminium for fabricating ultra-fine grained aluminium tubes for the first time and the ability of this process in significant grain refinement ismore » determined even after single cycle. Transmission electron microscopy and X-ray diffraction were used to evaluate the microstructure of the repetitive tube expansion and shrinking processed materials and the examinations showed ultra-fine grains with the average grain size of 320 nm after one cycle of repetitive tube expansion and shrinking. The yield strength, ultimate tensile strength increased notably by the factor of 2.17 and 1.27 respectively, after one cycle of repetitive tube expansion and shrinking, whereas the elongation to failure as well as the uniform elongation decreased. Furthermore, micro-hardness distribution through the part's section proposed the hardness increasing to ~ 55 HV from the initial value of ~ 28 HV after one cycle of repetitive tube expansion and shrinking. - Highlights: • RTES was introduced for fabricating the UFGed AA1050 tubes for the first time. • Nano-grained AA1050 tube was obtained by RTES process. • Grain size of ~ 320 nm was obtained after two half-cycles of RTES process. • Yield and ultimate strength increased by the factor of 2.17 and 1.27 respectively. • The microhardness increased to ~ 55 HV from the initial value of ~ 28 HV.« less

  20. Effect of pectinase treatment on extraction of antioxidant phenols from pomace, for the production of puree-enriched cloudy apple juices.

    PubMed

    Oszmiański, Jan; Wojdyło, Aneta; Kolniak, Joanna

    2011-07-15

    Effects of pomace maceration on yield, turbidity, cloud stability, composition of phenolics, antioxidant activity and colour properties were studied, to evaluate the potential applicability of enzyme preparations in puree-enriched cloudy apple juice production. The yield of mixed juice and puree from pomace obtained in the enzymatic processing of apple ranged from 92.3% to 95.3%, significantly higher than the yield from the control without enzymatic pomace treatment (81.8%). Higher turbidity was obtained upon pomace treatment with Pectinex XXL and Pectinex Ultra SPL enzymes. The total content of phenolic compounds in apple pomace was higher than in raw juices (1520mg/kg and 441mg/L, respectively). The total polyphenol yields were higher in juices treated with Pectinex AFP L-4, Pectinex Yield Mash and Pectinex XXL, as compared to the control treatment. During 6months of storage, a significant change was observed in the content of polyphenols, especially in procyanidin fractions. Crown Copyright © 2011. Published by Elsevier Ltd. All rights reserved.

  1. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

  2. Germanium detectors in homeland security at PNNL

    DOE PAGES

    Stave, S.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADESmore » HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.« less

  3. Tunnel current across linear homocatenated germanium chains

    NASA Astrophysics Data System (ADS)

    Matsuura, Yukihito

    2014-01-01

    The electronic transport properties of germanium oligomers catenating into linear chains (linear Ge chains) have been theoretically studied using first principle methods. The conduction mechanism of a Ge chain sandwiched between gold electrodes was analyzed based on the density of states and the eigenstates of the molecule in a two-probe environment. Like that of silicon chains (Si chains), the highest occupied molecular orbital of Ge chains contains the extended σ-conjugation of Ge 4p orbitals at energy levels close to the Fermi level; this is in contrast to the electronic properties of linear carbon chains. Furthermore, the conductance of a Ge chain is expected to decrease exponentially with molecular length L. The decay constant β, which is defined as e-βL, of a Ge chain is similar to that of a Si chain, whereas the conductance of the Ge chains is higher than that of Si chains even though the Ge-Ge bond length is longer than the Si-Si bond length.

  4. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    NASA Astrophysics Data System (ADS)

    Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

    2017-02-01

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  5. Search for global-minimum geometries of medium-sized germanium clusters. II. Motif-based low-lying clusters Ge21-Ge29

    NASA Astrophysics Data System (ADS)

    Yoo, S.; Zeng, X. C.

    2006-05-01

    We performed a constrained search for the geometries of low-lying neutral germanium clusters GeN in the size range of 21⩽N⩽29. The basin-hopping global optimization method is employed for the search. The potential-energy surface is computed based on the plane-wave pseudopotential density functional theory. A new series of low-lying clusters is found on the basis of several generic structural motifs identified previously for silicon clusters [S. Yoo and X. C. Zeng, J. Chem. Phys. 124, 054304 (2006)] as well as for smaller-sized germanium clusters [S. Bulusu et al., J. Chem. Phys. 122, 164305 (2005)]. Among the generic motifs examined, we found that two motifs stand out in producing most low-lying clusters, namely, the six/nine motif, a puckered-hexagonal-ring Ge6 unit attached to a tricapped trigonal prism Ge9, and the six/ten motif, a puckered-hexagonal-ring Ge6 unit attached to a bicapped antiprism Ge10. The low-lying clusters obtained are all prolate in shape and their energies are appreciably lower than the near-spherical low-energy clusters. This result is consistent with the ion-mobility measurement in that medium-sized germanium clusters detected are all prolate in shape until the size N ˜65.

  6. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu; Kamins, T. I.

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Ramanmore » scattering measurements.« less

  7. Doping of germanium nanowires grown in presence of PH3

    NASA Astrophysics Data System (ADS)

    Tutuc, E.; Chu, J. O.; Ott, J. A.; Guha, S.

    2006-12-01

    The authors study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of phosphine (PH3), used as a dopant precursor. The device characteristics of the ensuing nanowire field effect transistors (FETs) indicate n-type, highly doped nanowires. Using a combination of different nanowire growth sequences and their FET characteristics, the authors determine that phosphorus incorporates predominately via the conformal growth, which accompanies the acicular, nanowire growth. As such, the Ge nanowires grown in the presence of PH3 contain a phosphorus doped shell and an undoped core. The authors determine the doping level in the shell to be ≃(1-4)×1019cm-3.

  8. Bulk and surface event identification in p-type germanium detectors

    NASA Astrophysics Data System (ADS)

    Yang, L. T.; Li, H. B.; Wong, H. T.; Agartioglu, M.; Chen, J. H.; Jia, L. P.; Jiang, H.; Li, J.; Lin, F. K.; Lin, S. T.; Liu, S. K.; Ma, J. L.; Sevda, B.; Sharma, V.; Singh, L.; Singh, M. K.; Singh, M. K.; Soma, A. K.; Sonay, A.; Yang, S. W.; Wang, L.; Wang, Q.; Yue, Q.; Zhao, W.

    2018-04-01

    The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.

  9. Flexible radio-frequency single-crystal germanium switch on plastic substrates

    NASA Astrophysics Data System (ADS)

    Qin, Guoxuan; Cai, Tianhao; Yuan, Hao-Chih; Seo, Jung-Hun; Ma, Jianguo; Ma, Zhenqiang

    2014-04-01

    This Letter presents the realization and characterizations of the flexible radio-frequency (RF)/microwave switches on plastic substrates employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible Ge single-pole, single-throw (SPST) switches display high frequency responses (e.g., insertion loss of <1.3 dB at up to 30 GHz and isolation >10 dB at up to ˜13 GHz). RF performance tradeoff exists for the flexible Ge switches and the major affecting parameters are determined. The flexible Ge SPST switch shows better RF property to that of the flexible Si SPST switch. Underlying mechanism is investigated by theoretical analysis and modeling of switches with different structures.

  10. Consumers' conceptualization of ultra-processed foods.

    PubMed

    Ares, Gastón; Vidal, Leticia; Allegue, Gimena; Giménez, Ana; Bandeira, Elisa; Moratorio, Ximena; Molina, Verónika; Curutchet, María Rosa

    2016-10-01

    Consumption of ultra-processed foods has been associated with low diet quality, obesity and other non-communicable diseases. This situation makes it necessary to develop educational campaigns to discourage consumers from substituting meals based on unprocessed or minimally processed foods by ultra-processed foods. In this context, the aim of the present work was to investigate how consumers conceptualize the term ultra-processed foods and to evaluate if the foods they perceive as ultra-processed are in concordance with the products included in the NOVA classification system. An online study was carried out with 2381 participants. They were asked to explain what they understood by ultra-processed foods and to list foods that can be considered ultra-processed. Responses were analysed using inductive coding. The great majority of the participants was able to provide an explanation of what ultra-processed foods are, which was similar to the definition described in the literature. Most of the participants described ultra-processed foods as highly processed products that usually contain additives and other artificial ingredients, stressing that they have low nutritional quality and are unhealthful. The most relevant products for consumers' conceptualization of the term were in agreement with the NOVA classification system and included processed meats, soft drinks, snacks, burgers, powdered and packaged soups and noodles. However, some of the participants perceived processed foods, culinary ingredients and even some minimally processed foods as ultra-processed. This suggests that in order to accurately convey their message, educational campaigns aimed at discouraging consumers from consuming ultra-processed foods should include a clear definition of the term and describe some of their specific characteristics, such as the type of ingredients included in their formulation and their nutritional composition. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. pureS2HAT: S 2HAT-based Pure E/B Harmonic Transforms

    NASA Astrophysics Data System (ADS)

    Grain, J.; Stompor, R.; Tristram, M.

    2011-10-01

    The pS2HAT routines allow efficient, parallel calculation of the so-called 'pure' polarized multipoles. The computed multipole coefficients are equal to the standard pseudo-multipoles calculated for the apodized sky maps of the Stokes parameters Q and U subsequently corrected by so-called counterterms. If the applied apodizations fullfill certain boundary conditions, these multipoles correspond to the pure multipoles. Pure multipoles of one type, i.e., either E or B, are ensured not to contain contributions from the other one, at least to within numerical artifacts. They can be therefore further used in the estimation of the sky power spectra via the pseudo power spectrum technique, which has to however correctly account for the applied apodization on the one hand, and the presence of the counterterms, on the other. In addition, the package contains the routines permitting calculation of the spin-weighted apodizations, given an input scalar, i.e., spin-0 window. The former are needed to compute the counterterms. It also provides routines for maps and window manipulations. The routines are written in C and based on the S2HAT library, which is used to perform all required spherical harmonic transforms as well as all inter-processor communication. They are therefore parallelized using MPI and follow the distributed-memory computational model. The data distribution patterns, pixelization choices, conventions etc are all as those assumed/allowed by the S2HAT library.

  12. Equal channel angular pressing (ECAP) and forging of commercially pure titanium (CP-Ti)

    NASA Astrophysics Data System (ADS)

    Krystian, Maciej; Huber, Daniel; Horky, Jelena

    2017-10-01

    Pure titanium with ultra-fine grained (UFG) microstructure is an exceptionally interesting material for biomedical and dental applications due to its very good biocompatibility and high strength. Such bulk, high-strength UFG materials are commonly produced by different Severe Plastic Deformation (SPD) techniques, whereof Equal Channel Angular Pressing (ECAP) is the most commonly used one. In this investigation commercially pure (CP) titanium (grade 2) was processed by ECAP using a die with a channel diameter of 20mm and an intersection angle of 105°. Six passes using route B120 (in which the billet is rotated between subsequent passes by 120°) at a temperature of 400°C were performed leading to a substantial grain refinement and an increase of strength and hardness. Subsequently, a thermal treatment study on ECAP-processed samples at different temperatures and for different time periods was carried out revealing the stability limit for ECAP CP-Ti as well as the best conditions leading to an improvement in both, strength and ductility. Furthermore, room temperature forging of the as-received (AR; hot-rolled and annealed) as well as ECAP-processed material was conducted. Tensile tests and hardness mappings revealed that forging is capable to further increase the strength of ECAP CP-Ti by more than 20%. Moreover, the mechanical properties are significantly more homogenous than after forging only.

  13. Limits on Spin-independent Couplings of Light Dark Matter WIMPs with a p-type Point-contact Germanium Detector

    NASA Astrophysics Data System (ADS)

    Lin, S. T.; Wong, H. T.

    New limits on spin-independent WIMP-nucleon coupling using 39.5 kg-days of data taken with a p-type point-contact germanium detector with fiducial mass of 840 g at the Kuo-Sheng Reactor Neutrino Laboratory (KSNL) is presented. Charactering and understanding the anomalous surface behaviour is of particular significance to this study. The slow rise-time of surface events is identified via software pulse shape analysis techniques. In addition, the signal-retaining and background-rejecting efficiencies are implied to clarify the actual bulk and surface events in the mixed regime at sub-keV range. Both efficiencies are evaluated with calibration sources and a novel n-type point-contact germanium detector. Efficiencies-corrected background spectra from the low-background facility at KSNL are derived. Part of the parameter space in cross-section versus WIMP-mass is probed and excluded.

  14. Mixtures of maximally entangled pure states

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Flores, M.M., E-mail: mflores@nip.up.edu.ph; Galapon, E.A., E-mail: eric.galapon@gmail.com

    We study the conditions when mixtures of maximally entangled pure states remain entangled. We found that the resulting mixed state remains entangled when the number of entangled pure states to be mixed is less than or equal to the dimension of the pure states. For the latter case of mixing a number of pure states equal to their dimension, we found that the mixed state is entangled provided that the entangled pure states to be mixed are not equally weighted. We also found that one can restrict the set of pure states that one can mix from in order tomore » ensure that the resulting mixed state is genuinely entangled. Also, we demonstrate how these results could be applied as a way to detect entanglement in mixtures of the entangled pure states with noise.« less

  15. Solution synthesis of germanium nanowires using a Ge+2 alkoxide precursor.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Boyle, Timothy J.; Tribby, Louis, J; Bunge, Scott D.

    2006-02-01

    A simple solution synthesis of germanium (Ge{sup 0}) nanowires under mild conditions (<400 C and 1 atm) was demonstrated using germanium 2,6 dibutylphenoxide Ge(DBP){sub 2} (1) as the precursor where DBP = OC{sub 6}H{sub 3}(C(CH{sub 3}){sub 3}){sub 2}-2,6. Compound 1, synthesized from Ge(NR{sub 2}){sub 2} where R = SiMe{sub 3} and two equivalents of DBP-H, was characterized as a mononuclear species by single crystal X-ray diffraction. Dissolution of 1 in oleylamine, followed by rapid injection into a 1-octadecene solution heated to 300 C under an atmosphere of Ar, led to the formation of Ge{sup 0} nanowires. The Ge{sup 0} nanowiresmore » were characterized by transmission electron microscopy (TEM), X-ray diffraction analysis, and Fourier transform infrared spectroscopy. These characterizations revealed that the nanowires are single crystalline in the cubic phase and coated with oleylamine surfactant. We also observed that the nanowire length (0.1 to 10 {micro}m) increases with increasing temperature (285 to 315 C) and time (5 to 60 min). Two growth mechanisms are proposed based on the TEM images intermittently taken during the growth process as a function of time: (1) self-seeding mechanism where one of two overlapping nanowires serves as a seed, while the other continues to grow as a wire and (2) self-assembly mechanism where an aggregate of small rods (< 50 nm in diameter) recrystallize on the tip of a longer wire, extending its length.« less

  16. Sex Difference in Draft-Legal Ultra-Distance Events - A Comparison between Ultra-Swimming and Ultra-Cycling.

    PubMed

    Salihu, Lejla; Rüst, Christoph Alexander; Rosemann, Thomas; Knechtle, Beat

    2016-04-30

    Recent studies reported that the sex difference in performance in ultra-endurance sports such as swimming and cycling changed over the years. However, the aspect of drafting in draft-legal ultra-endurance races has not yet been investigated. This study investigates the sex difference in ultra-swimming and ultra-cycling draft-legal races where drafting - swimming or cycling behind other participants to save energy and have more power at the end of the race to overtake them, is allowed. The change in performance of the annual best and the annual three best in an ultra-endurance swimming race (16-km 'Faros Swim Marathon') over 38 years and in a 24-h ultra-cycling race ('World Cycling Race') over 13 years were compared and analysed with respect to sex difference. Furthermore, performances of the fastest female and male finishers ever were compared. In the swimming event, the sex difference of the annual best male and female decreased non-significantly (P = 0.262) from 5.3% (1976) to 1.0% (2013). The sex gap of speed in the annual three fastest swimmers decreased significantly (P = 0.043) from 5.9 ± 1.6% (1979) to 4.7 ± 3.1% (2013). In the cycling event, the difference in cycling speed between the annual best male and female decreased significantly (P = 0.026) from 33.31% (1999) to 10.89% (2011). The sex gap of speed in the annual three fastest decreased significantly (P = 0.001) from 32.9 ± 0.6% (1999) to 16.4 ± 5.9% (2011). The fastest male swimmer ever (swimming speed 5.3 km/h, race time: 03:01:55 h:min:s) was 1.5% faster than the fastest female swimmer (swimming speed 5.2 km/h, race time: 03:04:09 h:min:s). The three fastest male swimmers ever (mean 5.27 ± 0.13 km/h) were 4.4% faster than the three fastest female swimmers (mean 5.05 ± 0.20 km/h) (P < 0.05). In the cycling event, the best male ever (cycling speed 45.8 km/h) was 26.4% faster than the best female (cycling speed 36.1 km/h). The three fastest male cyclists ever (45.9 km/h) (mean 45.85 ± 0.05 km

  17. Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

    DTIC Science & Technology

    2010-05-01

    samples were dipped in an aqueous solution of iodine (I) and potassium iodide (KI) (25 gm I and 100 gm KI per liter of water [H2O] ) (16). The samples...Satterfield, C. N.; Wentworth, R. L. in Hydrogen Peroxide , Reinhold Publishing, New York, 1955, p. 370. 12 19. Kishioka, K.; Horita, S.; Ohdaria, K...germanium H2O water HBT heterojunction bipolar transistor I iodine IPA isopropal alcohol KI potassium iodide MEE metal enhanced etching

  18. Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Haller, E.E.; Hubbard, G.S.; Hansen, W.L.

    1976-09-01

    A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/submore » 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).« less

  19. Femtosecond tracking of carrier relaxation in germanium with extreme ultraviolet transient reflectivity

    NASA Astrophysics Data System (ADS)

    Kaplan, Christopher J.; Kraus, Peter M.; Ross, Andrew D.; Zürch, Michael; Cushing, Scott K.; Jager, Marieke F.; Chang, Hung-Tzu; Gullikson, Eric M.; Neumark, Daniel M.; Leone, Stephen R.

    2018-05-01

    Extreme ultraviolet (XUV) transient reflectivity around the germanium M4 ,5 edge (3 d core-level to valence transition) at 30 eV is advanced to obtain the transient dielectric function of crystalline germanium [100] on femtosecond to picosecond time scales following photoexcitation by broadband visible-to-infrared (VIS/NIR) pulses. By fitting the transient dielectric function, carrier-phonon induced relaxations are extracted for the excited carrier distribution. The measurements reveal a hot electron relaxation rate of 3.2 ±0.2 ps attributed to the X -L intervalley scattering and a hot hole relaxation rate of 600 ±300 fs ascribed to intravalley scattering within the heavy hole (HH) band, both in good agreement with previous work. An overall energy shift of the XUV dielectric function is assigned to a thermally induced band gap shrinkage by formation of acoustic phonons, which is observed to be on a timescale of 4-5 ps, in agreement with previously measured optical phonon lifetimes. The results reveal that the transient reflectivity signal at an angle of 66∘ with respect to the surface normal is dominated by changes to the real part of the dielectric function, due to the near critical angle of incidence of the experiment (66∘-70∘) for the range of XUV energies used. This work provides a methodology for interpreting XUV transient reflectivity near core-level transitions, and it demonstrates the power of the XUV spectral region for measuring ultrafast excitation dynamics in solids.

  20. High-Resolution Electron Energy Loss Studies of Oxygen, Hydrogen, Nitrogen, Nitric Oxide, and Nitrous Oxide Adsorption on Germanium Surfaces.

    NASA Astrophysics Data System (ADS)

    Entringer, Anthony G.

    The first high resolution electron energy loss spectroscopy (HREELS) studies of the oxidation and nitridation of germanium surfaces are reported. Both single crystal Ge(111) and disordered surfaces were studied. Surfaces were exposed to H, O_2, NO, N _2O, and N, after cleaning in ultra-high vacuum. The Ge surfaces were found to be non-reactive to molecular hydrogen (H_2) at room temperature. Exposure to atomic hydrogen (H) resulted hydrogen adsorption as demonstrated by the presence of Ge-H vibrational modes. The HREEL spectrum of the native oxide of Ge characteristic of nu -GeO_2 was obtained by heating the oxide to 200^circC. Three peaks were observed at 33, 62, and 106 meV for molecular oxygen (O_2) adsorbed on clean Ge(111) at room temperature. These peaks are indicative of dissociative bonding and a dominant Ge-O-Ge bridge structure. Subsequent hydrogen exposure resulted in a shift of the Ge-H stretch from its isolated value of 247 meV to 267 meV, indicative of a dominant +3 oxidation state. A high density of dangling bonds and defects and deeper oxygen penetration at the amorphous Ge surface result in a dilute bridge structure with a predominant +1 oxidation state for similar exposures. Molecules of N_2O decompose at the surfaces to desorbed N_2 molecules and chemisorbed oxygen atoms. In contrast, both oxygen and nitrogen are detected at the surfaces following exposure to NO molecules. Both NO and N_2O appear to dissociate and bond at the top surface layer. Molecular nitrogen (N_2) does not react with the Ge surfaces, however, a precursor Ge nitride is observed at room temperature following exposure to nitrogen atoms and ions. Removal of oxygen by heating of the NO-exposed surface to 550^circC enabled the identification of the Ge-N vibrational modes. These modes show a structure similar to that of germanium nitride. This spectrum is also identical to that of the N-exposed surface heated to 550^circC. Surface phonon modes of the narrow-gap semiconducting

  1. Secondary ion formation during electronic and nuclear sputtering of germanium

    NASA Astrophysics Data System (ADS)

    Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

    2018-06-01

    Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

  2. Arsenic, barium, germanium, tin, dimethylsulfide and nutrient biogeochemistry in Charlotte Harbor, Florida, a phosphorus-enriched estuary

    NASA Astrophysics Data System (ADS)

    Froelich, P. N.; Kaul, L. W.; Byrd, J. T.; Andreae, M. O.; Roe, K. K.

    1985-03-01

    Concentrations of dissolved nutrients (NO 3, PO 4, Si), germanium species, arsenic species, tin, barium, dimethylsulfide and related parameters were measured along the salinity gradient in Charlotte Harbor. Phosphate enrichment from the phosphate industry on the Peace River promotes a productive diatom bloom near the river mouth where NO 3 and Si are completely consumed. Inorganic germanium is completely depleted in this bloom by uptake into biogenic opal. The Ge/Si ratio taken up by diatoms is about 0·7 × 10 -6, the same as that provided by the river flux, confirming that siliceous organisms incorporate germanium as an accidental trace replacement for silica. Monomethylgermanium and dimethylgermanium concentrations are undetectable in the Peace River, and increase linearly with increasing salinity to the seawater end of the bay, suggesting that these organogermanium species behave conservatively in estuaries, and are neither produced nor consumed during estuarine biogenic opal formation or dissolution. Inorganic arsenic displays slight removal in the bloom. Monomethylarsenic is produced both in the bloom and in mid-estuary, while dimethylarsenic is conservative in the bloom but produced in mid-estuary. The total production of methylarsenicals within the bay approximately balances the removal of inorganic arsenic, suggesting that most biological arsenic uptake in the estuary is biomethylated and released to the water column. Dimethylsulfide increases with increasing salinity in the estuary and shows evidence of removal, probably both by degassing and by microbial consumption. An input of DMS is observed in the central estuary. The behavior of total dissolvable tin shows no biological activity in the bloom or in mid-estuary, but does display a low-salinity input signal that parallels dissolved organic material, perhaps suggesting an association between tin and DOM. Barium displays dramatic input behavior at mid-salinities, probably due to slow release from clays

  3. A Compton scattering setup for pulse shape discrimination studies in germanium detectors.

    PubMed

    von Sturm, K; Belogurov, S; Brugnera, R; Garfagnini, A; Lippi, I; Modenese, L; Rosso, D; Turcato, M

    2017-07-01

    Pulse shape discrimination is an important handle to improve sensitivity in low background experiments. A dedicated setup was built to investigate the response of high-purity germanium detectors to single Compton scattered events. Using properly collimated γ-ray sources, it is possible to select events with known interaction location. The aim is to correlate the position dependent signal shape with geometrical and electrical properties of the detector. We report on design and performance of the setup with a first look on data. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Lattice dynamics and thermoelectric properties of nanocrystalline silicon-germanium alloys

    DOE PAGES

    Claudio, Tania; Stein, Niklas; Peterman, Nils; ...

    2015-10-26

    The lattice dynamics and thermoelectric properties of sintered phosphorus-doped nanostructured silicon- germanium alloys obtained by gas-phase synthesis were studied. Measurements of the density of phonon states by inelastic neutron scattering were combined with measurements of the elastic constants and the low- temperature heat capacity. A strong influence of nanostructuring and alloying on the lattice dynamics was observed. The thermoelectric transport properties of samples with different doping as well as samples sintered at different temperature were characterized between room temperature and 1000C. A peak figure of merit zT = 0:88 at 900C is observed and comparatively insensitive to the aforementioned param-more » eter variations.« less

  5. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Szofran, F. R.; Cobb, S. D.; Schweizer, M.; Walker, J. S.

    2005-01-01

    A series of (100)-oriented gallium-doped germanium crystals has been grown by the vertical Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c)) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. Tm(sup c) decreases as the aspect ratio of the melt increases, and approaches the theoretical limit expected for an infinite cylinder. Intentional interface demarcations are introduced by pulsing the RMF on and off The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased.

  6. Creating ligand-free silicon germanium alloy nanocrystal inks.

    PubMed

    Erogbogbo, Folarin; Liu, Tianhang; Ramadurai, Nithin; Tuccarione, Phillip; Lai, Larry; Swihart, Mark T; Prasad, Paras N

    2011-10-25

    Particle size is widely used to tune the electronic, optical, and catalytic properties of semiconductor nanocrystals. This contrasts with bulk semiconductors, where properties are tuned based on composition, either through doping or through band gap engineering of alloys. Ideally, one would like to control both size and composition of semiconductor nanocrystals. Here, we demonstrate production of silicon-germanium alloy nanoparticles by laser pyrolysis of silane and germane. We have used FTIR, TEM, XRD, EDX, SEM, and TOF-SIMS to conclusively determine their structure and composition. Moreover, we show that upon extended sonication in selected solvents, these bare nanocrystals can be stably dispersed without ligands, thereby providing the possibility of using them as an ink to make patterned films, free of organic surfactants, for device fabrication. The engineering of these SiGe alloy inks is an important step toward the low-cost fabrication of group IV nanocrystal optoelectronic, thermoelectric, and photovoltaic devices.

  7. Decryption of pure-position permutation algorithms.

    PubMed

    Zhao, Xiao-Yu; Chen, Gang; Zhang, Dan; Wang, Xiao-Hong; Dong, Guang-Chang

    2004-07-01

    Pure position permutation image encryption algorithms, commonly used as image encryption investigated in this work are unfortunately frail under known-text attack. In view of the weakness of pure position permutation algorithm, we put forward an effective decryption algorithm for all pure-position permutation algorithms. First, a summary of the pure position permutation image encryption algorithms is given by introducing the concept of ergodic matrices. Then, by using probability theory and algebraic principles, the decryption probability of pure-position permutation algorithms is verified theoretically; and then, by defining the operation system of fuzzy ergodic matrices, we improve a specific decryption algorithm. Finally, some simulation results are shown.

  8. A first-principles core-level XPS study on the boron impurities in germanium crystal

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji

    2013-12-04

    We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

  9. Perspectives on the Pure-Tone Audiogram.

    PubMed

    Musiek, Frank E; Shinn, Jennifer; Chermak, Gail D; Bamiou, Doris-Eva

    The pure-tone audiogram, though fundamental to audiology, presents limitations, especially in the case of central auditory involvement. Advances in auditory neuroscience underscore the considerably larger role of the central auditory nervous system (CANS) in hearing and related disorders. Given the availability of behavioral audiological tests and electrophysiological procedures that can provide better insights as to the function of the various components of the auditory system, this perspective piece reviews the limitations of the pure-tone audiogram and notes some of the advantages of other tests and procedures used in tandem with the pure-tone threshold measurement. To review and synthesize the literature regarding the utility and limitations of the pure-tone audiogram in determining dysfunction of peripheral sensory and neural systems, as well as the CANS, and to identify other tests and procedures that can supplement pure-tone thresholds and provide enhanced diagnostic insight, especially regarding problems of the central auditory system. A systematic review and synthesis of the literature. The authors independently searched and reviewed literature (journal articles, book chapters) pertaining to the limitations of the pure-tone audiogram. The pure-tone audiogram provides information as to hearing sensitivity across a selected frequency range. Normal or near-normal pure-tone thresholds sometimes are observed despite cochlear damage. There are a surprising number of patients with acoustic neuromas who have essentially normal pure-tone thresholds. In cases of central deafness, depressed pure-tone thresholds may not accurately reflect the status of the peripheral auditory system. Listening difficulties are seen in the presence of normal pure-tone thresholds. Suprathreshold procedures and a variety of other tests can provide information regarding other and often more central functions of the auditory system. The audiogram is a primary tool for determining type

  10. Ultra-Large Solar Sail

    NASA Technical Reports Server (NTRS)

    Burton, Rodney; Coverstone, Victoria

    2009-01-01

    UltraSail is a next-generation ultra-large (km2 class) sail system. Analysis of the launch, deployment, stabilization, and control of these sails shows that high-payload-mass fractions for interplanetary and deep-space missions are possible. UltraSail combines propulsion and control systems developed for formation-flying microsatellites with a solar sail architecture to achieve controllable sail areas approaching 1 km2. Electrically conductive CP-1 polyimide film results in sail subsystem area densities as low as 5 g/m2. UltraSail produces thrust levels many times those of ion thrusters used for comparable deep-space missions. The primary innovation involves the near-elimination of sail-supporting structures by attaching each blade tip to a formation- flying microsatellite, which deploys the sail and then articulates the sail to provide attitude control, including spin stabilization and precession of the spin axis. These microsatellite tips are controlled by microthrusters for sail-film deployment and mission operations. UltraSail also avoids the problems inherent in folded sail film, namely stressing, yielding, or perforating, by storing the film in a roll for launch and deployment. A 5-km long by 2 micrometer thick film roll on a mandrel with a 1 m circumference (32 cm diameter) has a stored thickness of 5 cm. A 5 m-long mandrel can store a film area of 25,000 m2, and a four-blade system has an area of 0.1 sq km.

  11. Generalized pure Lovelock gravity

    NASA Astrophysics Data System (ADS)

    Concha, Patrick; Rodríguez, Evelyn

    2017-11-01

    We present a generalization of the n-dimensional (pure) Lovelock Gravity theory based on an enlarged Lorentz symmetry. In particular, we propose an alternative way to introduce a cosmological term. Interestingly, we show that the usual pure Lovelock gravity is recovered in a matter-free configuration. The five and six-dimensional cases are explicitly studied.

  12. Ductile-regime turning of germanium and silicon

    NASA Technical Reports Server (NTRS)

    Blake, Peter N.; Scattergood, Ronald O.

    1989-01-01

    Single-point diamond turning of silicon and germanium was investigated in order to clarify the role of cutting depth in coaxing a ductile chip formation in normally brittle substances. Experiments based on the rapid withdrawal of the tool from the workpiece have shown that microfracture damage is a function of the effective depth of cut (as opposed to the nominal cutting depth). In essence, damage created by the leading edge of the tool is removed several revolutions later by lower sections of the tool edge, where the effective cutting depth is less. It appears that a truly ductile cutting response can be achieved only when the effective cutting depth, or critical chip thickness, is less than about 20 nm. Factors such as tool rake angle are significant in that they will affect the actual value of the critical chip thickness for transition from brittle to ductile response. It is concluded that the critical chip thickness is an excellent parameter for measuring the effects of machining conditions on the ductility of the cut and for designing tool-workpiece geometry in both turning and grinding.

  13. 77 FR 59182 - Ultra-Deepwater Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-26

    ... DEPARTMENT OF ENERGY Ultra-Deepwater Advisory Committee AGENCY: Office of Fossil Energy... of the Ultra-Deepwater Advisory Committee is to provide advice on development and implementation of programs related to ultra-deepwater architecture and technology to the Secretary of Energy and provide...

  14. High-Resolution Gamma-Ray Imaging Measurements Using Externally Segmented Germanium Detectors

    NASA Technical Reports Server (NTRS)

    Callas, J.; Mahoney, W.; Skelton, R.; Varnell, L.; Wheaton, W.

    1994-01-01

    Fully two-dimensional gamma-ray imaging with simultaneous high-resolution spectroscopy has been demonstrated using an externally segmented germanium sensor. The system employs a single high-purity coaxial detector with its outer electrode segmented into 5 distinct charge collection regions and a lead coded aperture with a uniformly redundant array (URA) pattern. A series of one-dimensional responses was collected around 511 keV while the system was rotated in steps through 180 degrees. A non-negative, linear least-squares algorithm was then employed to reconstruct a 2-dimensional image. Corrections for multiple scattering in the detector, and the finite distance of source and detector are made in the reconstruction process.

  15. 75 FR 48319 - Ultra-Deepwater Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-10

    ... DEPARTMENT OF ENERGY Ultra-Deepwater Advisory Committee AGENCY: Department of Energy, Office of...: Purpose of the Committee: The purpose of the Ultra-Deepwater Advisory Committee is to provide advice on development and implementation of programs related to ultra-deepwater architecture and technology to the...

  16. 76 FR 77990 - Ultra-Deepwater Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-15

    ... DEPARTMENT OF ENERGY Ultra-Deepwater Advisory Committee AGENCY: Office of Fossil Energy... Committee: The purpose of the Ultra-Deepwater Advisory Committee is to provide advice to the Secretary of Energy on development and implementation of programs related to ultra-deepwater natural gas and other...

  17. 76 FR 6775 - Ultra-Deepwater Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-08

    ... DEPARTMENT OF ENERGY Ultra-Deepwater Advisory Committee AGENCY: Department of Energy, Office of... Committee: The purpose of the Ultra-Deepwater Advisory Committee is to provide advice on development and implementation of programs related to ultra-deepwater architecture and technology to the Secretary of Energy and...

  18. 75 FR 54860 - Ultra Deepwater Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-09

    ... DEPARTMENT OF ENERGY Ultra Deepwater Advisory Committee AGENCY: Department of Energy, Office of... of an open meeting of the Ultra Deepwater Advisory Committee. The Committee was organized pursuant to.../advisorycommittees/UltraDeepwater.html . Issued in Washington, DC, on September 3, 2010. Carol A. Matthews, Committee...

  19. Machining approach of freeform optics on infrared materials via ultra-precision turning.

    PubMed

    Li, Zexiao; Fang, Fengzhou; Chen, Jinjin; Zhang, Xiaodong

    2017-02-06

    Optical freeform surfaces are of great advantage in excellent optical performance and integrated alignment features. It has wide applications in illumination, imaging and non-imaging, etc. Machining freeform surfaces on infrared (IR) materials with ultra-precision finish is difficult due to its brittle nature. Fast tool servo (FTS) assisted diamond turning is a powerful technique for the realization of freeform optics on brittle materials due to its features of high spindle speed and high cutting speed. However it has difficulties with large slope angles and large rise-and-falls in the sagittal direction. In order to overcome this defect, the balance of the machining quality on the freeform surface and the brittle nature in IR materials should be realized. This paper presents the design of a near-rotational freeform surface (NRFS) with a low non-rotational degree (NRD) to constraint the variation of traditional freeform optics to solve this issue. In NRFS, the separation of the surface results in a rotational part and a residual part denoted as a non-rotational surface (NRS). Machining NRFS on germanium is operated by FTS diamond turning. Characteristics of the surface indicate that the optical finish of the freeform surface has been achieved. The modulation transfer function (MTF) of the freeform optics shows a good agreement to the design expectation. Images of the final optical system confirm that the fabricating strategy is of high efficiency and high quality. Challenges and prospects are discussed to provide guidance of future work.

  20. UltraNet Target Parameters. Chapter 1

    NASA Technical Reports Server (NTRS)

    Kislitzin, Katherine T.; Blaylock, Bruce T. (Technical Monitor)

    1992-01-01

    The UltraNet is a high speed network capable of rates up to one gigabit per second. It is a hub based network with four optical fiber links connecting each hub. Each link can carry up to 256 megabits of data, and the hub backplane is capable of one gigabit aggregate throughput. Host connections to the hub may be fiber, coax, or channel based. Bus based machines have adapter boards that connect to transceivers in the hub, while channel based machines use a personality module in the hub. One way that the UltraNet achieves its high transfer rates is by off-loading the protocol processing from the hosts to special purpose protocol engines in the UltraNet hubs. In addition, every hub has a PC connected to it by StarLAN for network management purposes. Although there is hub resident and PC resident UltraNet software, this document treats only the host resident UltraNet software.

  1. Assessment of Bioavailable Concentrations of Germanium and Rare Earth Elements in the Rhizosphere of White Lupin (Lupinus albus L.)

    NASA Astrophysics Data System (ADS)

    Wiche, Oliver; Fischer, Ronny; Moschner, Christin; Székely, Balázs

    2015-04-01

    Concentrations of Germanium (Ge) and Rare Earth Elements in soils are estimated at 1.5 mg kg -1 (Ge), 25 mg kg -1 (La) and 20 mg kg -1 (Nd), which are only roughly smaller than concentrations of Pb and Zn. Germanium and rare earth elements are thus not rare but widely dispersed in soils and therefore up to date, only a few minable deposits are available. An environmental friendly and cost-effective way for Ge and rare earth element production could be phytomining. However, the most challenging part of a phytomining of these elements is to increase bioavailable concentrations of the elements in soils. Recent studies show, that mixed cultures with white lupine or other species with a high potential to mobilize trace metals in their rhizosphere due to an acidification of the soil and release of organic acids in the root zone could be a promising tool for phytomining. Complexation of Ge and rare earth elements by organic acids might play a key role in controlling bioavailability to plants as re-adsorption on soil particles and precipitation is prevented and thus, concentrations in the root zone of white lupine increase. This may also allow the complexes to diffuse along a concentration gradient to the roots of mixed culture growing species leading to enhanced plant uptake. However, to optimize mixed cultures it would be interesting to know to which extend mobilization of trace metals is dependent from chemical speciation of elements in soil due to the interspecific interaction of roots. A method for the identification of complexes of germanium and rare earth elements with organic acids, predominantly citric acid in the rhizosphere of white lupine was developed and successfully tested. The method is based on coupling of liquid chromatography with ICP-MS using a zic-philic column (SeQuant). As a preliminary result, we were able to show that complexes of germanium with citric acid exist in the rhizosphere of white lupin, what may contribute to the bioavailability of this

  2. Spin Qubits in Germanium Structures with Phononic Gap

    NASA Technical Reports Server (NTRS)

    Smelyanskiy, V. N.; Vasko, F. T.; Hafiychuk, V. V.; Dykman, M. I.; Petukhov, A. G.

    2014-01-01

    We propose qubits based on shallow donor electron spins in germanium structures with phononic gap. We consider a phononic crystal formed by periodic holes in Ge plate or a rigid cover / Ge layer / rigid substrate structure with gaps approximately a few GHz. The spin relaxation is suppressed dramatically, if the Zeeman frequency omegaZ is in the phononic gap, but an effective coupling between the spins of remote donors via exchange of virtual phonons remains essential. If omegaZ approaches to a gap edge in these structures, a long-range (limited by detuning of omegaZ) resonant exchange interaction takes place. We estimate that ratio of the exchange integral to the longitudinal relaxation rate exceeds 10(exp 5) and lateral scale of resonant exchange 0.1 mm. The exchange contribution can be verified under microwave pumping through oscillations of spin echo signal or through the differential absorption measurements. Efficient manipulation of spins due to the Rabi oscillations opens a new way for quantum information applications.

  3. Development of a Germanium Small-Animal SPECT System

    NASA Astrophysics Data System (ADS)

    Johnson, Lindsay C.; Ovchinnikov, Oleg; Shokouhi, Sepideh; Peterson, Todd E.

    2015-10-01

    Advances in fabrication techniques, electronics, and mechanical cooling systems have given rise to germanium detectors suitable for biomedical imaging. We are developing a small-animal SPECT system that uses a double-sided Ge strip detector. The detector's excellent energy resolution may help to reduce scatter and simplify processing of multi-isotope imaging, while its ability to measure depth of interaction has the potential to mitigate parallax error in pinhole imaging. The detector's energy resolution is <; 1% FWHM at 140 keV and its spatial resolution is approximately 1.5 mm FWHM. The prototype system described has a single-pinhole collimator with a 1-mm diameter and a 70-degree opening angle with a focal length variable between 4.5 and 9 cm. Phantom images from the gantry-mounted system are presented, including the NEMA NU-2008 phantom and a hot-rod phantom. Additionally, the benefit of energy resolution is demonstrated by imaging a dual-isotope phantom with 99mTc and 123I without cross-talk correction.

  4. Natural occurrence of pure nano-polycrystalline diamond from impact crater

    PubMed Central

    Ohfuji, Hiroaki; Irifune, Tetsuo; Litasov, Konstantin D.; Yamashita, Tomoharu; Isobe, Futoshi; Afanasiev, Valentin P.; Pokhilenko, Nikolai P.

    2015-01-01

    Consolidated bodies of polycrystalline diamond with grain sizes less than 100 nm, nano-polycrystalline diamond (NPD), has been experimentally produced by direct conversion of graphite at high pressure and high temperature. NPD has superior hardness, toughness and wear resistance to single-crystalline diamonds because of its peculiar nano-textures, and has been successfully used for industrial and scientific applications. Such sintered nanodiamonds have, however, not been found in natural mantle diamonds. Here we identified natural pure NPD, which was produced by a large meteoritic impact about 35 Ma ago in Russia. The impact diamonds consist of well-sintered equigranular nanocrystals (5–50 nm), similar to synthetic NPD, but with distinct [111] preferred orientation. They formed through the martensitic transformation from single-crystal graphite. Stress-induced local fragmentation of the source graphite and subsequent rapid transformation to diamond in the limited time scale result in multiple diamond nucleation and suppression of the overall grain growth, producing the unique nanocrystalline texture of natural NPD. A huge amount of natural NPD is expected to be present in the Popigai crater, which is potentially important for applications as novel ultra-hard material. PMID:26424384

  5. Natural occurrence of pure nano-polycrystalline diamond from impact crater

    NASA Astrophysics Data System (ADS)

    Ohfuji, Hiroaki; Irifune, Tetsuo; Litasov, Konstantin D.; Yamashita, Tomoharu; Isobe, Futoshi; Afanasiev, Valentin P.; Pokhilenko, Nikolai P.

    2015-10-01

    Consolidated bodies of polycrystalline diamond with grain sizes less than 100 nm, nano-polycrystalline diamond (NPD), has been experimentally produced by direct conversion of graphite at high pressure and high temperature. NPD has superior hardness, toughness and wear resistance to single-crystalline diamonds because of its peculiar nano-textures, and has been successfully used for industrial and scientific applications. Such sintered nanodiamonds have, however, not been found in natural mantle diamonds. Here we identified natural pure NPD, which was produced by a large meteoritic impact about 35 Ma ago in Russia. The impact diamonds consist of well-sintered equigranular nanocrystals (5-50 nm), similar to synthetic NPD, but with distinct [111] preferred orientation. They formed through the martensitic transformation from single-crystal graphite. Stress-induced local fragmentation of the source graphite and subsequent rapid transformation to diamond in the limited time scale result in multiple diamond nucleation and suppression of the overall grain growth, producing the unique nanocrystalline texture of natural NPD. A huge amount of natural NPD is expected to be present in the Popigai crater, which is potentially important for applications as novel ultra-hard material.

  6. Effect of ultra-high pressure on small animals, tardigrades and Artemia

    NASA Astrophysics Data System (ADS)

    Ono, Fumihisa; Mori, Yoshihisa; Takarabe, Kenichi; Fujii, Akiko; Saigusa, Masayuki; Matsushima, Yasushi; Yamazaki, Daisuke; Ito, Eiji; Galas, Simon; Saini, Naurang L.

    2016-12-01

    This research shows that small animals, tardigrades (Milnesium tardigradum) in tun (dehydrated) state and Artemia salina cists (dried eggs) can tolerate the very high hydrostatic pressure of 7.5 GPa. It was really surprising that living organisms can survive after exposure to such a high pressure. We extended these studies to the extremely high pressure of 20 GPa by using a Kawai-type octahedral anvil press. After exposure to this pressure for 30 min, the tardigrades were soaked in pure water and investigated under a microscope. Their bodies regained metabolic state and no serious injury could be seen. But they were not alive. A few of Artemia eggs went part of the way to hatching after soaked in sea water, but they never grew any further. Comparing with the case of blue-green alga, these animals are weaker under ultra-high pressure.

  7. Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

    PubMed

    Nan, Tianxiang; Zhou, Ziyao; Liu, Ming; Yang, Xi; Gao, Yuan; Assaf, Badih A; Lin, Hwaider; Velu, Siddharth; Wang, Xinjun; Luo, Haosu; Chen, Jimmy; Akhtar, Saad; Hu, Edward; Rajiv, Rohit; Krishnan, Kavin; Sreedhar, Shalini; Heiman, Don; Howe, Brandon M; Brown, Gail J; Sun, Nian X

    2014-01-14

    Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

  8. Measurement of energy transitions for the decay radiations of 75Ge and 69Ge in a high purity germanium detector

    NASA Astrophysics Data System (ADS)

    Aydın, Güral; Usta, Metin; Oktay, Adem

    2018-06-01

    Photoactivation experiments have a wide range of application areas in nuclear, particle physics, and medical physics such as measuring energy levels and half-lifes of nuclei, experiments for understanding imaging methods in medicine, isotope production for patient treatment, radiation security and transportation, radiation therapy, and astrophysics processes. In this study, some energy transition values of the decay radiations of 75Ge and 69Ge, which are the products of photonuclear reactions (γ, n) with germanium isotopes (75Ge and 69Ge), were measured. The gamma spectrum as a result of atomic transitions were analysed by using a high purity semiconductor germanium detector and the energy transition values which are presented here were compared with the ones which are the best in literature. It was observed that the results presented are in agreement with literature in error range and some results have better precisions.

  9. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    NASA Astrophysics Data System (ADS)

    Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

    2018-01-01

    Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  10. Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp; Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871; Asahara, Ryohei

    2015-12-21

    The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures withmore » the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.« less

  11. The UltraLightweight Technology for Research in Astronomy (ULTRA) Project

    NASA Astrophysics Data System (ADS)

    Twarog, B. A.; Anthony-Twarog, B. J.; Shawl, S. J.; Hale, R.; Taghavi, R.; Fesen, R.; Etzel, P. B.; Martin, R.; Romeo, R.

    2004-12-01

    The collaborative focus of four academic departments (Univ. of Kansas Aerospace Engineering, Univ. of Kansas Physics & Astronomy, San Diego State University Astronomy and Dartmouth College Astronomy) and a private industry partner (Composite Mirror Applications, Inc.-CMA, Inc.) is a three-year plan to develop and test UltraLightweight Technology for Research in Astronomy (ULTRA). The ULTRA technology, using graphite fiber composites to fabricate mirrors and telescope structures, offers a versatile and cost-effective tool for optical astronomy, including the economical fabrication and operation of telescopes ranging from small (1m or smaller) aperture for education and research to extremely large (30m+) segmented telescopes (ELTs). The specific goal of this NSF-funded three-year Major Research Instrumentation project is to design, build, and test a 1m-class optical tube assembly (OTA) and mirrors constructed entirely from composites. In the first year of the project, the team has built and is field-testing two 0.4m prototypes to validate the optical surfaces and figures of the mirrors and to test and refine the structural dynamics of the OTA. Preparation for design and construction of the 1m telescope is underway. When completed in late 2005, the ULTRA telescope will be operated remotely from Mt. Laguna Observatory east of San Diego, where it will undergo a period of intensive optical and imaging tests. A 0.4m prototype OTA with mirrors (12 kg total weight) will be on display at the meeting. Support of this work by NSF through grants AST-0320784 and AST-0321247, NASA grant NCC5-600, the University of Kansas, and San Diego State University is gratefully acknowledged.

  12. Ultra-High Pressure Driver and Nozzle Survivability in the RDHWT/MARIAH II Hypersonic Wind Tunnel

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Costantino, M.; Brown, G.; Raman, K.

    2000-06-02

    An ultra-high pressure device provides a high enthalpy (> 2500 kJ/kg), low entropy (< 5 kJ/kg-K) air source for the RDHWT/MARIAH II Program Medium Scale Hypersonic Wind Tunnel. The design uses stagnation conditions of 2300 MPa (330,000 Psi) and 750 K (900 F) in a radial configuration of intensifiers around an axial manifold to deliver pure air at 100 kg/s mass flow rates for run times suitable for aerodynamic, combustion, and test and evaluation applications. Helium injection upstream of the nozzle throat reduces the throat wall recovery temperature to about 1200 K and reduces the oxygen concentration at the nozzlemore » wall.« less

  13. Analysis of pure maple syrup consumers

    Treesearch

    Paul E. Sendak

    1974-01-01

    Virtually all of the pure maple syrup productim in the United States is in the northern states of Maine, Massachusetts, Michigan, New Hampshire, New York, Ohio, Pennsylvania, Vermont, and Wisconsin. Pure maple syrup users living in the maple production area and users living in other areas of the United States were asked a series of questions about their use of pure...

  14. Cationic aza-macrocyclic complexes of germanium(II) and silicon(IV).

    PubMed

    Everett, Matthew; Jolleys, Andrew; Levason, William; Light, Mark E; Pugh, David; Reid, Gillian

    2015-12-28

    [GeCl2(dioxane)] reacts with the neutral aza-macrocyclic ligands L, L = Me3tacn (1,4,7-trimethyl-1,4,7-triazacyclononane), Me4cyclen (1,4,7,10-tetramethyl-1,4,7,10-tetraazacyclododecane) or Me4cyclam (1,4,8,11-tetramethyl-1,4,8,11-tetraazacyclotetradecane) and two mol. equiv. of Me3SiO3SCF3 in thf solution to yield the unusual and hydrolytically very sensitive [Ge(L)][O3SCF3]2 as white solids in moderate yield. Using shorter reaction times [Ge(Me3tacn)]Cl2 and [Ge(Me3tacn)]Cl[O3SCF3] were also isolated; the preparation of [Ge(Me4cyclen)][GeCl3]2 is also described. The structures of the Me3tacn complexes show κ(3)-coordination of the macrocycle, with the anions interacting only weakly to produce very distorted five- or six-coordination at germanium. In contrast, the structure of [Ge(Me4cyclen)][O3SCF3]2 shows no anion interactions, and a distorted square planar geometry at germanium from coordination to the tetra-aza macrocycle. Crystal structures of the Si(iv) complexes, [SiCl3(Me3tacn)]Y (Y = O3SCF3, BAr(F); [B{3,5-(CF3)2C6H3}4]) and [SiHCl2(Me3tacn)][BAr(F)], obtained from reaction of SiCl4 or SiHCl3 with Me3tacn, followed by addition of either Me3SiO3SCF3 or Na[BAr(F)], contain distorted octahedral cations, with facialκ(3)-coordinated Me3tacn. The open-chain triamine, Me2NCH2CH2N(Me)CH2CH2NMe2 (pmdta), forms [SiCl3(pmdta)][BAr(F)] and [SiBr3(pmdta)][BAr(F)] under similar conditions, containing mer-octahedral cations.

  15. Ultra Reliability Workshop Introduction

    NASA Technical Reports Server (NTRS)

    Shapiro, Andrew A.

    2006-01-01

    This plan is the accumulation of substantial work by a large number of individuals. The Ultra-Reliability team consists of representatives from each center who have agreed to champion the program and be the focal point for their center. A number of individuals from NASA, government agencies (including the military), universities, industry and non-governmental organizations also contributed significantly to this effort. Most of their names may be found on the Ultra-Reliability PBMA website.

  16. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Walker, J. S.; Schweizer, M.; Cobb, S. D.; Szofran, F. R.

    2004-01-01

    A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). Time-dependent flow instabilities occur when the critical magnetic Taylor number (Tm(sup c) is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The experimental data indicate that Tm(sup c) increases as the aspect ratio of the melt decreases. Modeling calculations predicting Tm(sup c) as a function of aspect ratio are in reasonable agreement with the experimental data. The RMF has a marked affect on the interface shape, changing it from concave to nearly flat as the RMF strength is increased. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

  17. Bridgman Growth of Germanium Crystals in a Rotating Magnetic Field

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Schweizer, M.; Cobb, S. D.; Walker, J. S.; Szofran, F. R.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    A series of (100)-oriented gallium-doped germanium crystals have been grown by the Bridgman method and under the influence of a rotating magnetic field (RMF). The RMF has a marked affect on the interface shape, changing it from concave to nearly flat. The onset of time-dependent flow instabilities occurs when the critical magnetic Taylor number is exceeded, and this can be observed by noting the appearance of striations in the grown crystals. The critical magnetic Taylor number is a sensitive function of the aspect ratio and, as the crystal grows under a constant applied magnetic field, the induced striations change from nonperiodic to periodic, undergo a period-doubling transition, and then cease to exist. Also, by pulsing the RMF on and off, it is shown that intentional interface demarcations can be introduced.

  18. Method of manufacturing a niobium-aluminum-germanium superconductive material

    DOEpatents

    Wang, John L.; Pickus, Milton R.; Douglas, Kent E.

    1980-01-01

    A method for manufacturing flexible Nb.sub.3 (Al,Ge) multifilamentary superconductive material in which a sintered porous niobium compact is infiltrated with an aluminum-germanium alloy and thereafter deformed and heat treated in a series of steps at different successively higher temperatures preferably below 1000.degree. C. to produce filaments composed of Nb.sub.3 (Al,G3) within the compact. By avoiding temperatures in excess of 1000.degree. C. during the heat treatment, cladding material such as copper can be applied to facilitate a deformation step preceding the heat treatment and can remain in place through the heat treatment to also serve as a temperature stabilizer for supeconductive material produced. Further, these lower heat treatment temperatures favor formation of filaments with reduced grain size and, hence with more grain boundaries which in turn increase the current-carrying capacity of the superconductive material.

  19. Loop-mediated isothermal amplification with the Procedure for Ultra Rapid Extraction kit for the diagnosis of pneumocystis pneumonia.

    PubMed

    Kawano, Shuichi; Maeda, Takuya; Suzuki, Takefumi; Abe, Tatsuhiro; Mikita, Kei; Hamakawa, Yusuke; Ono, Takeshi; Sonehara, Wataru; Miyahira, Yasushi; Kawana, Akihiko

    2015-03-01

    Loop-mediated isothermal amplification (LAMP) is an innovative molecular technique requiring only a heating device and isothermal conditions to amplify a specific target gene. The results of current microscopic diagnostic tools for pneumocystis pneumonia are not sufficiently consistent for detecting infection with a low-density of Pneumocystis jirovecii. Although polymerase chain reaction (PCR) is highly sensitive, it is not suitable for resource-limited facilities. LAMP is a potential diagnostic replacement for PCR in such settings but a critical disadvantage of DNA extraction was still remained. Therefore, we employed the Procedure for Ultra Rapid Extraction (PURE) kit, which uses a porous material, to isolate the DNA from clinical samples in a simple way in combination with previously reported LAMP procedure for diagnosing PCP. The detection limit of the PURE-LAMP method applied to artificial bronchoalveolar lavage fluid samples was 100 copies/tube, even with the use of massive blood-contaminated solutions. In addition, we concluded the diagnostic procedure within 1 h without the need for additional equipment. PURE-LAMP coupled with suitable primers for specific pathogens has good potential for diagnosing various infectious diseases. Copyright © 2014 Japanese Society of Chemotherapy and The Japanese Association for Infectious Diseases. Published by Elsevier Ltd. All rights reserved.

  20. Angular-momentum couplings in ultra-long-range giant dipole molecules

    NASA Astrophysics Data System (ADS)

    Stielow, Thomas; Scheel, Stefan; Kurz, Markus

    2018-02-01

    In this article we extend the theory of ultra-long-range giant dipole molecules, formed by an atom in a giant dipole state and a ground-state alkali-metal atom, by angular-momentum couplings known from recent works on Rydberg molecules. In addition to s -wave scattering, the next higher order of p -wave scattering in the Fermi pseudopotential describing the binding mechanism is considered. Furthermore, the singlet and triplet channels of the scattering interaction as well as angular-momentum couplings such as hyperfine interaction and Zeeman interactions are included. Within the framework of Born-Oppenheimer theory, potential energy surfaces are calculated in both first-order perturbation theory and exact diagonalization. Besides the known pure triplet states, mixed-spin character states are obtained, opening up a whole new landscape of molecular potentials. We determine exact binding energies and wave functions of the nuclear rotational and vibrational motion numerically from the various potential energy surfaces.

  1. Ge14 Br8 (PEt3 )4 : A Subhalide Cluster of Germanium.

    PubMed

    Kunz, Tanja; Schrenk, Claudio; Schnepf, Andreas

    2018-04-03

    Heating a metastable solution of Ge I Br to room temperature led to the first structurally characterized metalloid subhalide cluster Ge 14 Br 8 (PEt 3 ) 4 (1). Furthermore 1 can be seen as the first isolated binary halide cluster on the way from Ge I Br to elemental germanium, giving insight into the complex reaction mechanism of its disproportionation reaction. Quantum chemical calculations further indicate that a classical bonding situation is realized within 1 and that the last step of the formation of 1 might include the trapping of GeBr 2 units. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

    The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

  3. The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

    DOE PAGES

    Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

    2017-10-07

    The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

  4. The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

    NASA Astrophysics Data System (ADS)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

    2018-01-01

    The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

  5. Broadband telecom to mid-infrared supercontinuum generation in a dispersion-engineered silicon germanium waveguide.

    PubMed

    Ettabib, Mohamed A; Xu, Lin; Bogris, Adonis; Kapsalis, Alexandros; Belal, Mohammad; Lorent, Emerick; Labeye, Pierre; Nicoletti, Sergio; Hammani, Kamal; Syvridis, Dimitris; Shepherd, David P; Price, Jonathan H V; Richardson, David J; Petropoulos, Periklis

    2015-09-01

    We demonstrate broadband supercontinuum generation (SCG) in a dispersion-engineered silicon-germanium waveguide. The 3 cm long waveguide is pumped by femtosecond pulses at 2.4 μm, and the generated supercontinuum extends from 1.45 to 2.79 μm (at the -30  dB point). The broadening is mainly driven by the generation of a dispersive wave in the 1.5-1.8 μm region and soliton fission. The SCG was modeled numerically, and excellent agreement with the experimental results was obtained.

  6. Characterisation of baroreflex sensitivity of recreational ultra-endurance athletes.

    PubMed

    Foulds, Heather J A; Cote, Anita T; Phillips, Aaron A; Charlesworth, Sarah A; Bredin, Shannon S D; Burr, Jamie F; Drury, Chipman Taylor; Ngai, Shirley; Fougere, Renee J; Ivey, Adam C; Warburton, Darren E R

    2014-01-01

    Altered autonomic function has been identified following ultra-endurance event participation among elite world-class athletes. Despite dramatic increases in recreational athlete participation in these ultra-endurance events, the physiological effects on these athletes are less known. This investigation sought to characterise changes in surrogate measures of autonomic function: heart rate variability (HRV), blood pressure variability (BPV) and baroreceptor sensitivity (BRS) following ultra-endurance race participation. Further, we sought to compare baseline measures among ultra-endurance athletes and recreationally active controls not participating in the ultra-endurance race. Recreational ultra-endurance athletes (n = 25, 44.6 ± 8.2 years, 8 females) and recreationally active age, sex and body mass index matched controls (n = 25) were evaluated. Measurements of HRV, BPV and BRS were collected pre- and post-race for recreational ultra-endurance athletes and at baseline, for recreationally active controls. Post-race, ultra-endurance athletes demonstrated significantly greater sympathetic modulation [low frequency (LF) power HRV: 50.3 ± 21.6 normalised units (n.u.) to 65.9 ± 20.4 n.u., p = 0.01] and significantly lower parasympathetic modulation [high frequency (HF) power HRV: 45.0 ± 22.4 n.u. to 23.9 ± 13.1 n.u., p < 0.001] and BRS. Baseline measurements BRS (spectral: 13.96 ± 10.82 ms·mmHg(-1) vs. 11.39 ± 5.33 ms·mmHg(-1)) were similar among recreational ultra-endurance athletes and recreationally active controls, though recreational ultra-endurance athletes demonstrated greater parasympathetic modulation of some HRV and BPV measures. Recreational ultra-endurance athletes experienced increased sympathetic tone and declines in BRS post-race, similar to previously reported elite world-class ultra-endurance athletes, though still within normal population ranges.

  7. Rehabilitation of pure alexia: A review

    PubMed Central

    Starrfelt, Randi; Ólafsdóttir, Rannveig Rós; Arendt, Ida-Marie

    2013-01-01

    Acquired reading problems caused by brain injury (alexia) are common, either as a part of an aphasic syndrome, or as an isolated symptom. In pure alexia, reading is impaired while other language functions, including writing, are spared. Being in many ways a simple syndrome, one would think that pure alexia was an easy target for rehabilitation efforts. We review the literature on rehabilitation of pure alexia from 1990 to the present, and find that patients differ widely on several dimensions, such as alexia severity and associated deficits. Many patients reported to have pure alexia in the reviewed studies, have associated deficits such as agraphia or aphasia and thus do not strictly conform to the diagnosis. Few studies report clear and generalisable effects of training, none report control data, and in many cases the reported findings are not supported by statistics. We can, however, tentatively conclude that Multiple Oral Re-reading techniques may have some effect in mild pure alexia where diminished reading speed is the main problem, while Tacile-Kinesthetic training may improve letter identification in more severe cases of alexia. There is, however, still a great need for well-designed and controlled studies of rehabilitation of pure alexia. PMID:23808895

  8. Comparative in vitro biocompatibility of nickel-titanium, pure nickel, pure titanium, and stainless steel: genotoxicity and atomic absorption evaluation.

    PubMed

    Assad, M; Lemieux, N; Rivard, C H; Yahia, L H

    1999-01-01

    The genotoxicity level of nickel-titanium (NiTi) was compared to that of its pure constituents, pure nickel (Ni) and pure titanium (Ti) powders, and also to 316L stainless steel (316L SS) as clinical reference material. In order to do so, a dynamic in vitro semiphysiological extraction was performed with all metals using agitation and ISO requirements. Peripheral blood lymphocytes were then cultured in the presence of all material extracts, and their comparative genotoxicity levels were assessed using electron microscopy-in situ end-labeling (EM-ISEL) coupled to immunogold staining. Cellular chromatin exposition to pure Ni and 316L SS demonstrated a significantly stronger gold binding than exposition to NiTi, pure Ti, or the untreated control. In parallel, graphite furnace atomic absorption spectrophotometry (AAS) was also performed on all extraction media. The release of Ni atoms took the following decreasing distribution for the different resulting semiphysiological solutions: pure Ni, 316L SS, NiTi, Ti, and controls. Ti elements were detected after elution of pure titanium only. Both pure titanium and nickel-titanium specimens obtained a relative in vitro biocompatibility. Therefore, this quantitative in vitro study provides optimistic results for the eventual use of nickel-titanium alloys as surgical implant materials.

  9. Electrodeposition of germanium from supercritical fluids.

    PubMed

    Ke, Jie; Bartlett, Philip N; Cook, David; Easun, Timothy L; George, Michael W; Levason, William; Reid, Gillian; Smith, David; Su, Wenta; Zhang, Wenjian

    2012-01-28

    Several Ge(II) and Ge(IV) compounds were investigated as possible reagents for the electrodeposition of Ge from liquid CH(3)CN and CH(2)F(2) and supercritical CO(2) containing as a co-solvent CH(3)CN (scCO(2)) and supercritical CH(2)F(2) (scCH(2)F(2)). For Ge(II) reagents the most promising results were obtained using [NBu(n)(4)][GeCl(3)]. However the reproducibility was poor and the reduction currents were significantly less than the estimated mass transport limited values. Deposition of Ge containing films was possible at high cathodic potential from [NBu(n)(4)][GeCl(3)] in liquid CH(3)CN and supercritical CO(2) containing CH(3)CN but in all cases they were heavily contaminated by C, O, F and Cl. Much more promising results were obtained using GeCl(4) in liquid CH(2)F(2) and supercritical CH(2)F(2). In this case the reduction currents were consistent with mass transport limited reduction and bulk electrodeposition produced amorphous films of Ge. Characterisation by XPS showed the presence of low levels of O, F and C, XPS confirmed the presence of Ge together with germanium oxides, and Raman spectroscopy showed that the as deposited amorphous Ge could be crystallised by the laser used in obtaining the Raman measurements.

  10. 7 CFR 58.144 - Pasteurization or ultra-pasteurization.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Pasteurization or ultra-pasteurization. 58.144 Section... Service 1 Operations and Operating Procedures § 58.144 Pasteurization or ultra-pasteurization. When pasteurization or ultra-pasteurization is intended or required, or when a product is designated “pasteurized” or...

  11. In-Situ Survey System of Resistive and Thermoelectric Properties of Either Pure or Mixed Materials in Thin Films Evaporated Under Ultra High Vacuum

    NASA Astrophysics Data System (ADS)

    Lechevallier, L.; Le Huerou, J.-Y.; Richon, G.; Sarrau, J.-M.; Gouault, J.

    1995-04-01

    The study of thermoelectric and resistive in situ behaviours depending on temperature for thin films of either pure or composite materials obtained under ultra-high vacuum, is very interesting, since they can be used as strain gauges or superficial resistances. However, studies become particularly difficult when the measurements generate very low-level electrical signals. Indeed, these turn out to be hardly detectable because of the perturbations brought by the experimental environment. The apparatus described below allows for the measurement of resistance with a relative uncertainty of 2×10^{-4}, resistance variation with an absolute uncertainty of 2 mΩ and thermoelectric e.m.f. of about 2 μV. Films studied in the laboratory generally exhibit resistances lower than 100 Ω and resistance variations due to temperature variations of about a few ohms. So this device has sufficient technical characteristics for our studies. It can be connected to a PC, which allows for easy data collection and treatment. L'étude des comportements résistif et thermoélectrique in situ en fonction de la température de couches minces de matériaux simples ou composites obtenus en milieu raréfié s'avére intéressante en vue d'applications comme jauge de contrainte ou résistance superficielle mais particulièrement délicate lorsque les mesures donnent naissance à des signaux électriques de très faible amplitude. Ces derniers deviennent en effet difficilement décelables en raison des perturbations apportées par l'environnement expérimental. Le système qui est décrit ici permet de mesurer des résistances avec une certitude relative de 2×10^{-4} et d'apprécier des variations de résistance de 2 mΩ et des f.e.m. thermoélectriques de l'ordre de 2 μV. Les couches étudiées au laboratoire présentent généralement des résistances inférieures à 100 Ω et des variations de résistance dues aux variations de température de l'ordre de quelques Ω. Le dispositif de mesure

  12. Polarized ensembles of random pure states

    NASA Astrophysics Data System (ADS)

    Deelan Cunden, Fabio; Facchi, Paolo; Florio, Giuseppe

    2013-08-01

    A new family of polarized ensembles of random pure states is presented. These ensembles are obtained by linear superposition of two random pure states with suitable distributions, and are quite manageable. We will use the obtained results for two purposes: on the one hand we will be able to derive an efficient strategy for sampling states from isopurity manifolds. On the other, we will characterize the deviation of a pure quantum state from separability under the influence of noise.

  13. High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Pastor, David; Gandhi, Hemi H.; Monmeyran, Corentin P.; Akey, Austin J.; Milazzo, Ruggero; Cai, Yan; Napolitani, Enrico; Gwilliam, Russell M.; Crowe, Iain F.; Michel, Jurgen; Kimerling, L. C.; Agarwal, Anuradha; Mazur, Eric; Aziz, Michael J.

    2018-04-01

    Obtaining high level active n+ carrier concentrations in germanium (Ge) has been a significant challenge for further development of Ge devices. By ion implanting phosphorus (P) and fluorine (F) into Ge and restoring crystallinity using Nd:YAG nanosecond pulsed laser melting (PLM), we demonstrate 1020 cm-3 n+ carrier concentration in tensile-strained epitaxial germanium-on-silicon. Scanning electron microscopy shows that after laser treatment, samples implanted with P have an ablated surface, whereas P + F co-implanted samples have good crystallinity and a smooth surface topography. We characterize P and F concentration depth profiles using secondary ion mass spectrometry and spreading resistance profiling. The peak carrier concentration, 1020 cm-3 at 80 nm below the surface, coincides with the peak F concentration, illustrating the key role of F in increasing donor activation. Cross-sectional transmission electron microscopy of the co-implanted sample shows that the Ge epilayer region damaged during implantation is a single crystal after PLM. High-resolution X-ray diffraction and Raman spectroscopy measurements both indicate that the as-grown epitaxial layer strain is preserved after PLM. These results demonstrate that co-implantation and PLM can achieve the combination of n+ carrier concentration and strain in Ge epilayers necessary for next-generation, high-performance Ge-on-Si devices.

  14. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia, E-mail: yeo@ieee.org

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths aremore » formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.« less

  15. Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer.

    PubMed

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2015-12-14

    The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites.

  16. Synthesis, characterizations and anti-bacterial activities of pure and Ag doped CdO nanoparticles by chemical precipitation method

    NASA Astrophysics Data System (ADS)

    Sivakumar, S.; Venkatesan, A.; Soundhirarajan, P.; Khatiwada, Chandra Prasad

    2015-02-01

    In the present study, synthesized pure and Ag (1%, 2%, and 3%) doped Cadmium Oxide (CdO) nanoparticles by chemical precipitation method. Then, the synthesized products were characterized by thermo gravimetric-differential thermal analysis (TG-DTA), X-ray diffraction (XRD) analysis, Fourier transform infrared (FT-IR) spectroscopy, Ultra violet-Vis diffused reflectance spectroscopy (UV-Vis-DRS), Scanning electron microscopy (SEM), Energy dispersive X-rays (EDX) spectroscopy, and anti-bacterial activities, respectively. The transition temperatures and phase transitions of Cd(OH)2 to CdO at 400 °C was confirmed by TG-DTA analysis. The XRD patterns show the cubic shape and average particle sizes are 21, 40, 34, and 37 nm, respectively for pure and Ag doped samples. FT-IR study confirmed the presence of CdO and Ag at 677 and 459 cm-1, respectively. UV-Vis-DRS study shows the variation on direct and indirect band gaps. The surface morphologies and elemental analysis have been confirmed from SEM and with EDX. In addition, the synthesized products have been characterized by antibacterial activities against Gram-positive and negative bacteria. Further, the present investigation suggests that CdO nanoparticles have the great potential applications on various industrial and medical fields of research.

  17. Radiation damage of the HEAO C-1 germanium detectors

    NASA Technical Reports Server (NTRS)

    Mahoney, W. A.; Ling, J. C.; Jacobson, A. S.

    1981-01-01

    The effects of radiation damage from proton bombardment of the four HEAO C-1 high purity germanium detectors have been measured and compared to predictions. Because of the presence of numerous gamma-ray lines in the detector background spectra and because of the relatively long exposure time of the HEAO 3 satellite to cosmic-ray and trapped protons, it has been possible to measure both the energy and time dependence of radiation damage. After 100 d in orbit, each of the four detectors has been exposed to approximately 3 x 10 to the 7th protons/sq cm, and the average energy resolution at 1460 keV had degraded from 3.2 keV fwhm to 8.6 keV fwhm. The lines were all broadened to the low energy side although the line profile was different for each of the four detectors. The damage-related contribution to the degradation in energy resolution was found to be linear in energy and proton influence.

  18. Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Radek, M.; Bracht, H., E-mail: bracht@uni-muenster.de; Johnson, B. C.

    2015-08-24

    The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5 μm. Recrystallization of the amorphous structure is performed at temperatures between 350 °C and 450 °C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5 nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that themore » SPE mechanism consists of bond-switching with nearest-neighbours across the amorphous-crystalline (a/c) interface.« less

  19. Newly discovered orally active pure antiestrogens.

    PubMed

    Kanbe, Yoshitake; Kim, Myung-Hwa; Nishimoto, Masahiro; Ohtake, Yoshihito; Yoneya, Takaaki; Ohizumi, Iwao; Tsunenari, Toshiaki; Taniguchi, Kenji; Kaiho, Shin-ichi; Nabuchi, Yoshiaki; Araya, Hiroshi; Kawata, Setsu; Morikawa, Kazumi; Jo, Jae-Chon; Kwon, Hee-An; Lim, Hyun-Suk; Kim, Hak-Yeop

    2006-09-15

    In order to develop orally active pure antiestrogens, we incorporated the carboxy-containing side chains into the 7alpha-position of the steroid scaffold and found that 17-keto derivative CH4893237 (12b) functioned as a pure antiestrogen with its oral activity much superior to clinically used pure antiestrogen, ICI182,780. Results from the pharmacokinetic evaluation indicated that the potent antiestrogen activity at oral dosing in mice attributed to both improved absorption from the intestinal wall and metabolic stability in liver.

  20. Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

    NASA Technical Reports Server (NTRS)

    Bratt, P. R.; Lewis, N. N.; Long, L. E.

    1978-01-01

    The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

  1. Ultra-Gradient Test Cavity for Testing SRF Wafer Samples

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    N.J. Pogue, P.M. McIntyre, A.I. Sattarov, C. Reece

    2010-11-01

    A 1.3 GHz test cavity has been designed to test wafer samples of superconducting materials. This mushroom shaped cavity, operating in TE01 mode, creates a unique distribution of surface fields. The surface magnetic field on the sample wafer is 3.75 times greater than elsewhere on the Niobium cavity surface. This field design is made possible through dielectrically loading the cavity by locating a hemisphere of ultra-pure sapphire just above the sample wafer. The sapphire pulls the fields away from the walls so the maximum field the Nb surface sees is 25% of the surface field on the sample. In thismore » manner, it should be possible to drive the sample wafer well beyond the BCS limit for Niobium while still maintaining a respectable Q. The sapphire's purity must be tested for its loss tangent and dielectric constant to finalize the design of the mushroom test cavity. A sapphire loaded CEBAF cavity has been constructed and tested. The results on the dielectric constant and loss tangent will be presented« less

  2. Ultra-wide-field imaging in diabetic retinopathy; an overview.

    PubMed

    Ghasemi Falavarjani, Khalil; Wang, Kang; Khadamy, Joobin; Sadda, Srinivas R

    2016-06-01

    To present an overview on ultra-wide-field imaging in diabetic retinopathy. A comprehensive search of the pubmed database was performed using the search terms of "ultra-wide-field imaging", "ultra-wide-field fluorescein angiography" and "diabetic retinopathy". The relevant original articles were reviewed. New advances in ultra-wide-field imaging allow for precise measurements of the peripheral retinal lesions. A consistent finding amongst these articles was that ultra-wide-field imaging improved detection of peripheral lesion. There was discordance among the studies, however, on the correlation between peripheral diabetic lesions and diabetic macular edema. Visualization of the peripheral retina using ultra-wide-field imaging improves diagnosis and classification of diabetic retinopathy. Additional studies are needed to better define the association of peripheral diabetic lesions with diabetic macular edema.

  3. Development of an underground HPGe array facility for ultra low radioactivity measurements

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sala, E.; Kang, W. G.; Kim, Y. D.

    Low Level Counting techniques using low background facilities are continuously under development to increase the possible sensitivity needed for rare physics events experiments. The CUP (Center for Underground Physics) group of IBS is developing, in collaboration with Canberra, a ultra low background instrument composed of two arrays facing each other with 7 HPGe detectors each. The low radioactive background of each detector has been evaluated and improved by the material selection of the detector components. Samples of all the building materials have been provided by the manufacturer and the contaminations had been measured using an optimized low background 100% HPGemore » with a dedicated shielding. The evaluation of the intrinsic background has been performed using MonteCarlo simulations and considering the contribution of each material with the measured contamination. To further reduce the background, the instrument will be placed in the new underground laboratory at YangYang exploiting the 700m mountain coverage and radon-free air supplying system. The array has been designed to perform various Ultra Low background measurements; the sensitivity we are expecting will allow not only low level measurements of Ra and Th contaminations in Copper or other usually pure materials, but also the search for rare decays. In particular some possible candidates and configurations to detect the 0νECEC (for example {sup 106}Cd and {sup 156}Dy) and rare β decays ({sup 96}Zr, {sup 180m}Ta , etc ) are under study.« less

  4. Ultra-short ion and neutron pulse production

    DOEpatents

    Leung, Ka-Ngo; Barletta, William A.; Kwan, Joe W.

    2006-01-10

    An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 .mu.s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.

  5. Debris-free rear-side picosecond laser ablation of thin germanium wafers in water with ethanol

    NASA Astrophysics Data System (ADS)

    Zhang, Dongshi; Gökce, Bilal; Sommer, Steffen; Streubel, René; Barcikowski, Stephan

    2016-03-01

    In this paper, we perform liquid-assisted picosecond laser cutting of 150 μm thin germanium wafers from the rear side. By investigating the cutting efficiency (the ability to allow an one-line cut-through) and quality (characterized by groove morphologies on both sides), the pros and cons of this technique under different conditions are clarified. Specifically, with laser fluence fixed, repetition rate and scanning speed are varied to show quality and efficiency control by means of laser parameter modulation. It is found that low repetition rate ablation in liquid gives rise to a better cut quality on the front side than high repetition rate ablation since it avoids dispersed nanoparticles redeposition resulting from a bubble collapse, unlike the case of 100 kHz which leads to large nanorings near the grooves resulting from a strong interaction of bubbles and the case of 50 kHz which leads to random cutting due to the interaction of the former pulse induced cavitation bubble and the subsequent laser pulse. Furthermore, ethanol is mixed with pure distilled water to assess the liquid's impact on the cutting efficiency and cutting quality. The results show that increasing the ethanol fraction decreases the ablation efficiency but simultaneously, greatly improves the cutting quality. The improvement of cut quality as ethanol ratio increases may be attributed to less laser beam interference by a lower density of bubbles which adhere near the cut kerf during ablation. A higher density of bubbles generated from ethanol vaporization during laser ablation in liquid will cause stronger bubble shielding effect toward the laser beam propagation and therefore result in less laser energy available for the cut, which is the main reason for the decrease of cut efficiency in water-ethanol mixtures. Our findings give an insight into under which condition the rear-side laser cutting of thin solar cells should be performed: high repetition, pure distilled water and high laser power

  6. Tensor modes in pure natural inflation

    NASA Astrophysics Data System (ADS)

    Nomura, Yasunori; Yamazaki, Masahito

    2018-05-01

    We study tensor modes in pure natural inflation [1], a recently-proposed inflationary model in which an axionic inflaton couples to pure Yang-Mills gauge fields. We find that the tensor-to-scalar ratio r is naturally bounded from below. This bound originates from the finiteness of the number of metastable branches of vacua in pure Yang-Mills theories. Details of the model can be probed by future cosmic microwave background experiments and improved lattice gauge theory calculations of the θ-angle dependence of the vacuum energy.

  7. Geodynamic environments of ultra-slow spreading

    NASA Astrophysics Data System (ADS)

    Kokhan, Andrey; Dubinin, Evgeny

    2015-04-01

    Ultra-slow spreading is clearly distinguished as an outstanding type of crustal accretion by recent studies. Spreading ridges with ultra-slow velocities of extension are studied rather well. But ultra-slow spreading is characteristic feature of not only spreading ridges, it can be observed also on convergent and transform plate boundaries. Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on divergent plate boundaries: 1. On spreading ridges with ultra-slow spreading, both modern (f.e. Gakkel, South-West Indian, Aden spreading center) and ceased (Labrador spreading center, Aegir ridge); 2. During transition from continental rifting to early stages of oceanic spreading (all spreading ridges during incipient stages of their formation); 3. During incipient stages of formation of spreading ridges on oceanic crust as a result of ridge jumps and reorganization of plate boundaries (f.e. Mathematicians rise and East Pacific rise); 4. During propagation of spreading ridge into the continental crust under influence of hotspot (Aden spreading center and Afar triple junction), under presence of strike-slip faults preceding propagation (possibly, rift zone of California Bay). Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on transform plate boundaries: 1. In transit zones between two "typical" spreading ridges (f.e. Knipovich ridge); 2. In semi strike-slip/extension zones on the oceanic crust (f.e. American-Antarctic ridge); 3. In the zones of local extension in regional strike-slip areas in pull-apart basins along transform boundaries (Cayman trough, pull-apart basins of the southern border of Scotia plate). Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on convergent plate boundaries: 1. During back-arc rifting on the stage of transition into back-arc spreading (central

  8. Maximizing Tensile Strain in Germanium Nanomembranes for Enhanced Optoelectronic Properties

    NASA Astrophysics Data System (ADS)

    Sanchez Perez, Jose Roberto

    Silicon, germanium, and their alloys, which provide the leading materials platform of microelectronics, are extremely inefficient light emitters because of their indirect fundamental energy band gap. This basic materials property has so far hindered the development of group-IV photonic-active devices, including light emitters and diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy band gap relative to the indirect one, and that, with sufficient strain, Ge becomes direct-band gap, thus enabling facile interband light emission and the fabrication of Group IV lasers. It has, however, not been possible to impart sufficient strain to Ge to reach the direct-band gap goal, because bulk Ge fractures at much lower strains. Here it is shown that very thin sheets of Ge(001), called nanomembranes (NMs), can be used to overcome this materials limitation. Germanium nanomembranes (NMs) in the range of thicknesses from 20nm to 100nm were fabricated and then transferred and mounted to a flexible substrate [a polyimide (PI) sheet]. An apparatus was developed to stress the PI/NM combination and provide for in-situ Raman measurements of the strain as a function of applied stress. This arrangement allowed for the introduction of sufficient biaxial tensile strain (>1.7%) to transform Ge to a direct-band gap material, as determined by photoluminescence (PL) measurements and theory. Appropriate shifts in the emission spectrum and increases in PL intensities were observed. The advance in this work was nanomembrane fabrication technology; i.e., making thin enough Ge sheets to accept sufficiently high levels of strain without fracture. It was of interest to determine if the strain at which fracture ultimately does occur can be raised, by evaluating factors that initiate fracture. Attempts to assess the effect of free edges (enchant

  9. Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

    NASA Astrophysics Data System (ADS)

    Bansal, Monika; Kaur, Harsupreet

    2018-05-01

    In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

  10. Silicon-Germanium Films Grown on Sapphire for Ka-Band Communications Applications

    NASA Technical Reports Server (NTRS)

    Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.

    2004-01-01

    NASA's vision in the space communications area is to develop a broadband data network in which there is a high degree of interconnectivity among the various satellite systems, ground stations, and wired systems. To accomplish this goal, we will need complex electronic circuits integrating analog and digital data handling at the Ka-band (26 to 40 GHz). The purpose of this project is to show the feasibility of a new technology for Ka-band communications applications, namely silicon germanium (SiGe) on sapphire. This new technology will have several advantages in comparison to the existing silicon-substrate- based circuits. The main advantages are extremely low parasitic reactances that enable much higher quality active and passive components, better device isolation, higher radiation tolerance, and the integration of digital and analog circuitry on a single chip.

  11. Pure laparoscopic right hepatectomy for giant hemangioma using anterior approach.

    PubMed

    Kim, Seok-Hwan; Kim, Ki-Hun; Kirchner, Varvara A; Lee, Sang-Kyung

    2017-05-01

    Laparoscopic major hepatectomy remains a challenging procedure [1, 2]. In the case of giant tumors in the right liver, conventional approach (complete mobilization of the right liver before parenchymal transection) could be dangerous during mobilization because of large volume and weight [3, 4]. We present the case of a pure laparoscopic right hepatectomy for a giant hemangioma using an anterior approach. We achieved the informed consent with this patient and approved by the Ethics Committee of the Asan Medical Center. Giant hemangioma (13 × 11 × 14 cm) was located in right liver. After glissonean approach [5], Pringle maneuver was performed during the hepatic parenchymal transection. For the transection, the Cavitron Ultrasonic Surgical Aspirator was used. Small hepatic vein branches along the middle hepatic vein and small glissonean pedicles were sealed and divided with a THUNDERBEATTM (Olympus), which is the device with integration of both bipolar and ultrasonic energies delivered simultaneously. iDriveTM Ultra Powered Stapling device (Medtronic) was used for division of right glissonean pedicle and large hepatic veins. Hemangioma was removed through the lower abdominal transverse incision using the endo-bag. This technique has the advantage of avoiding excessive bleeding caused by avulsion of the hepatic vein and caval branches, iatrogenic tumor rupture [3]. By means of the anterior approach, pure laparoscopic right hepatectomy was performed successfully without intraoperative complications and transfusions. The operation time was 202 min, and the estimated blood loss was less than 150 ml. On postoperative day 3, computed tomographic scan showed no pathological findings. The patient was discharged on postoperative day 5 without complications. Laparoscopic approach has good results because of the view with magnification enabling meticulous hemostasis and the small wounds that give patients less pain [6, 7]. The authors recommend that the laparoscopic

  12. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    NASA Astrophysics Data System (ADS)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  13. Interference of qubits in pure dephasing and almost pure dephasing environments

    NASA Astrophysics Data System (ADS)

    Łobejko, Marcin; Mierzejewski, Marcin; Dajka, Jerzy

    2015-07-01

    Two-path interference of quantum particles with internal spin (qubits) interacting on one arm of the interferometer with bosonic environment is studied. It is assumed that the energy exchange between the qubit and its environment is either absent, which is a pure dephasing (decoherence) model, or very weak. Both the amplitude and the position of maximum of an output intensity discussed as a function of a phase shift can serve as a quantifier of parameters describing coupling between qubit and its environment. The time evolution of the qubit-environment system is analyzed in the Schrödinger picture and the output intensity for qubit-environment interaction close to pure decoherence is analyzed by means of perturbation theory. Quality of the applied approximation is verified by comparison with numerical results.

  14. Structure and Stability of GeAu{sub n}, n = 1-10 clusters: A Density Functional Study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Priyanka,; Dharamvir, Keya; Sharma, Hitesh

    2011-12-12

    The structures of Germanium doped gold clusters GeAu{sub n} (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu{sub n} clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu{sub n} clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding siliconmore » doped gold cluster. The HUMO-LOMO gap for Au{sub n}Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.« less

  15. Initial Results: An Ultra-Low-Background Germanium Crystal Array

    DTIC Science & Technology

    2010-09-01

    data (focused on γ -γ coincidence signatures) (Smith et al., 2004) and the Multi- Isotope Coincidence Analysis code (MICA) (Warren et al., 2006). The...The follow-on “CASCADES” project aims to develop a multicoincidence data- analysis package and make robust fission-product demonstration measurements...sensitivity. This effort is focused on improving gamma analysis capabilities for nuclear detonation detection (NDD) applications, e.g., nuclear treaty

  16. Ultra-Deep Drilling Cost Reduction; Design and Fabrication of an Ultra-Deep Drilling Simulator (UDS)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lindstrom, Jason

    2010-01-31

    Ultra-deep drilling, below about 20,000 ft (6,096 m), is extremely expensive and limits the recovery of hydrocarbons at these depths. Unfortunately, rock breakage and cuttings removal under these conditions is not understood. To better understand and thus reduce cost at these conditions an ultra-deep single cutter drilling simulator (UDS) capable of drill cutter and mud tests to sustained pressure and temperature of 30,000 psi (207 MPa) and 482 °F (250 °C), respectively, was designed and manufactured at TerraTek, a Schlumberger company, in cooperation with the Department of Energy’s National Energy Technology Laboratory. UDS testing under ultra-deep drilling conditions offers anmore » economical alternative to high day rates and can prove or disprove the viability of a particular drilling technique or fluid to provide opportunity for future domestic energy needs.« less

  17. Development and ultra-structure of an ultra-thin silicone epidermis of bioengineered alternative tissue.

    PubMed

    Wessels, Quenton; Pretorius, Etheresia

    2015-08-01

    Burn wound care today has a primary objective of temporary or permanent wound closure. Commercially available engineered alternative tissues have become a valuable adjunct to the treatment of burn injuries. Their constituents can be biological, alloplastic or a combination of both. Here the authors describe the aspects of the development of a siloxane epidermis for a collagen-glycosaminoglycan and for nylon-based artificial skin replacement products. A method to fabricate an ultra-thin epidermal equivalent is described. Pores, to allow the escape of wound exudate, were punched and a tri-filament nylon mesh or collagen scaffold was imbedded and silicone polymerisation followed at 120°C for 5 minutes. The ultra-structure of these bilaminates was assessed through scanning electron microscopy. An ultra-thin biomedical grade siloxane film was reliably created through precision coating on a pre-treated polyethylene terephthalate carrier. © 2013 The Authors. International Wound Journal © 2013 Medicalhelplines.com Inc and John Wiley & Sons Ltd.

  18. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    NASA Astrophysics Data System (ADS)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  19. Germanium Isotopes - the Global Budget and Paleoceanographic Potential

    NASA Astrophysics Data System (ADS)

    Baronas, J. J.; Hammond, D. E.; Rouxel, O. J.

    2017-12-01

    The distribution of element isotope ratios in rocks, sediments, rivers, and seawater can provide key insights about the operation and coupling of various biogeochemical cycles that are directly or indirectly responsible for the climate and habitability of the Earth surface environment. Germanium (Ge) is a trace element that shares many chemical similarities with silicon (Si), in addition to some siderophilic, chalcophilic, and organophilic properties. As a result, Ge stable isotope ratios (δ74Ge) and Ge/Si ratios can be used to trace various biogeochemical processes. These include silicate rock weathering, which modulates atmospheric pCO2 and supplies nutrients to ecosystems, biogenic silica formation, which is coupled to ocean productivity, and marine sediment diagenesis, which ultimately controls the removal of material from the Earth's surface. I will present an overview of my dissertation research concerning the global Ge isotope cycle, with insights into Ge isotope fractionation during secondary mineral precipitation during weathering on continents and during authigenesis in marine sediments. I will also discuss the potential for the δ74Ge sedimentary record to be used as a paleoceanographic proxy, given the constraints on the global Ge isotope budget.

  20. Element mixing distribution and structure feature of fusion zone in laser welding between different alloys and pure titanium.

    PubMed

    Wu, Haishu; Liu, Jihong; Liu, Xuecheng; Li, Changyi; Yu, Zhiwei

    2002-07-01

    To study micro morphology and element-mixing distribution of different alloys welded in laser and analyze the feasibility of laser welding different alloys. Alloys and titanium were matched into 4 groups: Au-Pt with Ni-Cr; Au-Pt with pure Ti; pure Ti with Ni-Cr; Ni-Cr with Co-Cr. They were welded in laser. Changes in metallography after hybridization of crystalline grain, ranges of heat-affected zone and pores were observed through SEM with ultra-thin windowed X-ray energy atlas. Meanwhile 10 testing points were chosen with area of 300 micro m x 900 micro m along the welding surface from the side A alloy to the side B alloy, than the element mixing distribution and tendency were analyzed with X-ray energy atlas. 1. Hybridization of different alloys: (l) in the group of Au-Pt with Ti, there was titanium element mixing into Au-Pt tissue gradually and evenly on the Au-Pt side of the interface without clear boundary and increasing in size of crystalline grain. However, there was titanium crystalline grain increasing in size, irregular morphology and small sacks on the titanium side with clear boundary. (2) in the group of Ni-Cr with Ti, there was mixing regularly, slow transition and interlocks between crystalline grains on the Ni-Cr side of the in terface. Poor transition, clear boundary and small cracks were observed on titanium side. (3) in the group of Co-Cr with Ni-Cr, there was good transition, obscure boundary on both sides resulting from network, cylinder and branch structure growing. 2. Element-mixing distribution of different alloys. In fusion zone, the metal elements in matched groups mixed well and hybridized into new alloys except titanium blocks. The location of wave peak depended on the composition of alloys. Most of elements were from the alloy far from the fusion zone. The hybridization between pure titanium and any other alloys is not good The effect of laser welding different alloys is ideal except with pure titanium.

  1. Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO x films and multilayer Ge/SiO2 structures

    NASA Astrophysics Data System (ADS)

    Grachev, D. A.; Ershov, A. V.; Karabanova, I. A.; Pirogov, A. V.; Nezhdanov, A. V.; Mashin, A. I.; Pavlov, D. A.

    2017-05-01

    The GeO x films and multilayer nanoperiodic Ge/SiO2 structures containing germanium nanocrystals were prepared by physical vapor deposition in vacuum. The properties of the films and multilayer structures were controlled by varying the deposition temperature in the range of 35-590°C and the annealing temperature in the range of 400-1000°C. A comparative study of the optical and structural characteristics of the nanosystems was performed using the methods of Raman scattering spectroscopy, IR spectroscopy, photoluminescence, and electron microscopy, which demonstrated a qualitative similarity of the nanosystems. It was found that annealing at temperatures in the range of 600-800°C leads to the formation of germanium nanocrystals with a high density ( 1012 cm-2), whereas in the materials not subjected to annealing, their density did not exceed 1010 cm-2. The average size of the nanocrystals was found to be 5 ± 2 nm. For both nanosystems, three luminescence bands were observed at 1.2, 1.5-1.7, and 1.7-2.0 eV. It was assumed that the origin of these bands is associated with germanium nanocrystals, oxygen-deficient centers in GeOx, and defects at the Ge/dielectric interface, respectively.

  2. The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

    DOE PAGES

    Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

    2017-10-07

    The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

  3. Ultrapure Water System for Hemodialysis Therapy

    ClinicalTrials.gov

    2011-07-21

    The Change of Biomarkers CRP, CBC With the Use of Ultra Pure Water System for; Hemodialysis.; The Rate of Adverse Events Such as Hypotension During Hemodialysis Therapy With Ultra Pure Water; System as Compared to Conventional Water System.

  4. Review on the progress of ultra-precision machining technologies

    NASA Astrophysics Data System (ADS)

    Yuan, Julong; Lyu, Binghai; Hang, Wei; Deng, Qianfa

    2017-06-01

    Ultra-precision machining technologies are the essential methods, to obtain the highest form accuracy and surface quality. As more research findings are published, such technologies now involve complicated systems engineering and been widely used in the production of components in various aerospace, national defense, optics, mechanics, electronics, and other high-tech applications. The conception, applications and history of ultra-precision machining are introduced in this article, and the developments of ultra-precision machining technologies, especially ultra-precision grinding, ultra-precision cutting and polishing are also reviewed. The current state and problems of this field in China are analyzed. Finally, the development trends of this field and the coping strategies employed in China to keep up with the trends are discussed.

  5. Characterizing commercial pureed foods: sensory, nutritional, and textural analysis.

    PubMed

    Ettinger, Laurel; Keller, Heather H; Duizer, Lisa M

    2014-01-01

    Dysphagia (swallowing impairment) is a common consequence of stroke and degenerative diseases such as Parkinson's and Alzheimer's. Limited research is available on pureed foods, specifically the qualities of commercial products. Because research has linked pureed foods, specifically in-house pureed products, to malnutrition due to inferior sensory and nutritional qualities, commercial purees also need to be investigated. Proprietary research on sensory attributes of commercial foods is available; however direct comparisons of commercial pureed foods have never been reported. Descriptive sensory analysis as well as nutritional and texture analysis of commercially pureed prepared products was performed using a trained descriptive analysis panel. The pureed foods tested included four brands of carrots, of turkey, and two of bread. Each commercial puree was analyzed for fat (Soxhlet), protein (Dumas), carbohydrate (proximate analysis), fiber (total fiber), and sodium content (Quantab titrator strips). The purees were also texturally compared with a line spread test and a back extrusion test. Differences were found in the purees for sensory attributes as well as nutritional and textural properties. Findings suggest that implementation of standards is required to reduce variability between products, specifically regarding the textural components of the products. This would ensure all commercial products available in Canada meet standards established as being considered safe for swallowing.

  6. Pure natural inflation

    NASA Astrophysics Data System (ADS)

    Nomura, Yasunori; Watari, Taizan; Yamazaki, Masahito

    2018-01-01

    We point out that a simple inflationary model in which the axionic inflaton couples to a pure Yang-Mills theory may give the scalar spectral index (ns) and tensor-to-scalar ratio (r) in complete agreement with the current observational data.

  7. Synthesis and Characterization of Phase-pure Copper Zinc Tin Sulfide (Cu2ZnSnS4) Nanoparticles

    NASA Astrophysics Data System (ADS)

    Monahan, Bradley Michael

    Semiconductor nanoparticles have been an important area of research in many different disciplines. A substantial amount of this work has been put toward advancing the field of photovoltaics. However, current p-type photovoltaic materials can not sustain the large scale production needed for future energy demands due to their low elemental abundance. Therefore, Earth abundant semiconductor materials have become of great interest to the photovoltaic community especially, the material copper zinc tin sulfide (CZTS), also known by its mineral name kesterite. CZTS exhibits desirable properties for photovoltaics, such as elemental abundance, high absorption coefficient (~104 cm-1 ), high carrier concentration, and optimum direct band gap (1.5 eV). To date, solution based approaches for making CZTS have yielded the most promising conversion efficiencies in solar cells. To that end, the motivation of nanoparticle based inks that can be used in high throughput production are an attractive route for large scale deployment. This has driven the need to make high quality CZTS nanoparticles that possess the properties of the pure kesterite phase with high monodispersity that can be deposited into dense thin films. The inherent challenge of making a quaternary compound of a single phase has made this a difficult task; however, some of those fundamental problems are addressed in this thesis. This had resulted in the synthesis of phase-pure k-CZTS confirmed by powder X-ray diffraction, Raman spectroscopy, UV-visible absorption spectroscopy and energy dispersive x-ray spectroscopy. Furthermore, ultra-fast laser spectroscopy was done on CZTS thin films made from phase-pure kesterite nanoparticles synthesized in this work. This thesis provides new data that directly probes the lifetime of photogenerated free carriers in kesterite CZTS (k-CZTS) thin films.

  8. Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

    PubMed

    Dong, Wei; Hirohata, Toru; Nakajima, Kazutoshi; Wang, Xiaoping

    2013-11-04

    Using finite-difference-time-domain simulation, we have studied the near-field effect of Germanium (Ge) subwavelength arrays designed in-plane with a normal incidence. Spectra of vertical electric field component normal to the surface show pronounced resonance peaks in an infrared range, which can be applied in a quantum well infrared photodetector. Unlike the near-field optics in metallic systems that are commonly related to surface plasmons, the intense vertical field along the surface of the Ge film can be interpreted as a combination of diffraction and waveguide theory. The existence of the enhanced field is confirmed by measuring the Fourier transform infrared spectra of fabricated samples. The positions of the resonant peaks obtained in experiment are in good agreement with our simulations.

  9. Dot size effects of nanocrystalline germanium on charging dynamics of memory devices

    PubMed Central

    2013-01-01

    The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated. The calculations demonstrate that the charge stored in the NC Ge layer and the charging current at a given oxide voltage depend on the dot size especially on a few nanometers. They have also been found to obey the tendency of initial increase, then saturation, and lastly, decrease with increasing dot size at any given charging time, which is caused by a compromise between the effects of the lowest conduction states and the capacitance of NC Ge layer on the tunneling. The experimental data from literature have also been used to compare and validate the theoretical analysis. PMID:23305228

  10. Consumption of ultra-processed foods predicts diet quality in Canada.

    PubMed

    Moubarac, Jean-Claude; Batal, M; Louzada, M L; Martinez Steele, E; Monteiro, C A

    2017-01-01

    This study describes food consumption patterns in Canada according to the types of food processing using the Nova classification and investigates the association between consumption of ultra-processed foods and the nutrient profile of the diet. Dietary intakes of 33,694 individuals from the 2004 Canadian Community Health Survey aged 2 years and above were analyzed. Food and drinks were classified using Nova into unprocessed or minimally processed foods, processed culinary ingredients, processed foods and ultra-processed foods. Average consumption (total daily energy intake) and relative consumption (% of total energy intake) provided by each of the food groups were calculated. Consumption of ultra-processed foods according to sex, age, education, residential location and relative family revenue was assessed. Mean nutrient content of ultra-processed foods and non-ultra-processed foods were compared, and the average nutrient content of the overall diet across quintiles of dietary share of ultra-processed foods was measured. In 2004, 48% of calories consumed by Canadians came from ultra-processed foods. Consumption of such foods was high amongst all socioeconomic groups, and particularly in children and adolescents. As a group, ultra-processed foods were grossly nutritionally inferior to non-ultra-processed foods. After adjusting for covariates, a significant and positive relationship was found between the dietary share of ultra-processed foods and the content in carbohydrates, free sugars, total and saturated fats and energy density, while an inverse relationship was observed with the dietary content in protein, fiber, vitamins A, C, D, B6 and B12, niacin, thiamine, riboflavin, as well as zinc, iron, magnesium, calcium, phosphorus and potassium. Lowering the dietary share of ultra-processed foods and raising consumption of hand-made meals from unprocessed or minimally processed foods would substantially improve the diet quality of Canadian. Copyright © 2016

  11. Method of preparing pure fluorine gas

    DOEpatents

    Asprey, Larned B.

    1976-01-01

    A simple, inexpensive system for purifying and storing pure fluorine is described. The method utilizes alkali metal-nickel fluorides to absorb tank fluorine by forming nickel complex salts and leaving the gaseous impurities which are pumped away. The complex nickel fluoride is then heated to evolve back pure gaseous fluorine.

  12. Comparison of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography for the separation of synthetic cathinones.

    PubMed

    Carnes, Stephanie; O'Brien, Stacey; Szewczak, Angelica; Tremeau-Cayel, Lauriane; Rowe, Walter F; McCord, Bruce; Lurie, Ira S

    2017-09-01

    A comparison of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography for the separation of synthetic cathinones has been conducted. Nine different mixtures of bath salts were analyzed in this study. The three different chromatographic techniques were examined using a general set of controlled synthetic cathinones as well as a variety of other synthetic cathinones that exist as positional isomers. Overall 35 different synthetic cathinones were analyzed. A variety of column types and chromatographic modes were examined for developing each separation. For the ultra high performance supercritical fluid chromatography separations, analyses were performed using a series of Torus and Trefoil columns with either ammonium formate or ammonium hydroxide as additives, and methanol, ethanol or isopropanol organic solvents as modifiers. Ultra high performance liquid chromatographic separations were performed in both reversed phase and hydrophilic interaction chromatographic modes using SPP C18 and SPP HILIC columns. Gas chromatography separations were performed using an Elite-5MS capillary column. The orthogonality of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography was examined using principal component analysis. For the best overall separation of synthetic cathinones, the use of ultra high performance supercritical fluid chromatography in combination with gas chromatography is recommended. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Further demonstration of the VRLA-type UltraBattery under medium-HEV duty and development of the flooded-type UltraBattery for micro-HEV applications

    NASA Astrophysics Data System (ADS)

    Furukawa, J.; Takada, T.; Monma, D.; Lam, L. T.

    The UltraBattery has been invented by the CSIRO Energy Technology in Australia and has been developed and produced by the Furukawa Battery Co., Ltd., Japan. This battery is a hybrid energy storage device which combines a super capacitor and a lead-acid battery in single unit cells, taking the best from both technologies without the need of extra, expensive electronic controls. The capacitor enhances the power and lifespan of the lead-acid battery as it acts as a buffer during high-rate discharging and charging, thus enabling it to provide and absorb charge rapidly during vehicle acceleration and braking. The laboratory results of the prototype valve-regulated UltraBatteries show that the capacity, power, available energy, cold cranking and self-discharge of these batteries have met, or exceeded, all the respective performance targets set for both minimum and maximum power-assist HEVs. The cycling performance of the UltraBatteries under micro-, mild- and full-HEV duties is at least four times longer than that of the state-of-the-art lead-acid batteries. Importantly, the cycling performance of UltraBatteries is proven to be comparable or even better than that of the Ni-MH cells. On the other hand, the field trial of UltraBatteries in the Honda Insight HEV shows that the vehicle has surpassed 170,000 km and the batteries are still in a healthy condition. Furthermore, the UltraBatteries demonstrate very good acceptance of the charge from regenerative braking even at high state-of-charge, e.g., 70% during driving. Therefore, no equalization charge is required for the UltraBatteries during field trial. The HEV powered by UltraBatteries gives slightly higher fuel consumption (cf., 4.16 with 4.05 L/100 km) and CO 2 emissions (cf., 98.8 with 96 g km -1) compared with that by Ni-MH cells. There are no differences in driving experience between the Honda Insight powered by UltraBatteries and by Ni-MH cells. Given such comparable performance, the UltraBattery pack costs

  14. Testing effects in mixed- versus pure-list designs.

    PubMed

    Rowland, Christopher A; Littrell-Baez, Megan K; Sensenig, Amanda E; DeLosh, Edward L

    2014-08-01

    In the present study, we investigated the role of list composition in the testing effect. Across three experiments, participants learned items through study and initial testing or study and restudy. List composition was manipulated, such that tested and restudied items appeared either intermixed in the same lists (mixed lists) or in separate lists (pure lists). In Experiment 1, half of the participants received mixed lists and half received pure lists. In Experiment 2, all participants were given both mixed and pure lists. Experiment 3 followed Erlebacher's (Psychological Bulletin, 84, 212-219, 1977) method, such that mixed lists, pure tested lists, and pure restudied lists were given to independent groups. Across all three experiments, the final recall results revealed significant testing effects for both mixed and pure lists, with no reliable difference in the magnitude of the testing advantage across list designs. This finding suggests that the testing effect is not subject to a key boundary condition-list design-that impacts other memory phenomena, including the generation effect.

  15. Laser-induced self-organization in silicon-germanium thin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Weizman, M.; Nickel, N. H.; Sieber, I.

    We report on the formation of self-organized structures in thin films of silicon-germanium (Si{sub 1-x}Ge{sub x}) with 0.3

  16. Pure Maple Syrup: Nutritive Value.

    PubMed

    Leaf, A L

    1964-02-28

    Variations in concentrations of sugar, nitrogen, phosphorus, potassium, calcium, and magnesium of sap from sugar maple (Acer saccharum, Marsh.) trees are related to the time of sap collection and result in variation of the same components in pure maple syrup. Thirty milliliters (one fluid ounce) of pure maple syrup may contain 3 to 6 mg of phosphorus, 10 to 30 mg of potassium, 40 to 80 mg of calcium, and 4 to 25 mg of magnesium.

  17. Ultra High Bypass Integrated System Test

    NASA Image and Video Library

    2015-09-14

    NASA’s Environmentally Responsible Aviation Project, in collaboration with the Federal Aviation Administration (FAA) and Pratt & Whitney, completed testing of an Ultra High Bypass Ratio Turbofan Model in the 9’ x 15’ Low Speed Wind Tunnel at NASA Glenn Research Center. The fan model is representative of the next generation of efficient and quiet Ultra High Bypass Ratio Turbofan Engine designs.

  18. Similarities and differences between learning abilities, "pure" learning disabilities, "pure" ADHD and comorbid ADHD with learning disabilities.

    PubMed

    Mangina, Constantine A; Beuzeron-Mangina, Helen

    2009-08-01

    This research pursues the crucial question of the differentiation of preadolescents with "Pure" ADHD, comorbid ADHD with learning disabilities, "Pure" learning disabilities and age-matched normal controls. For this purpose, Topographic Mapping of Event-Related Brain Potentials (ERPs) to a Memory Workload Paradigm with visually presented words, Bilateral Electrodermal Activity during cognitive workload and Mangina-Test performance were used. The analysis of Topographic distribution of amplitudes revealed that normal preadolescents were significantly different from "Pure" ADHD (P<0.0001), "Pure" learning disabilities (P<0.0001), and comorbid ADHD with learning disabilities (P<0.0009), by displaying enhanced prefrontal and frontal negativities (N450). In contrast, preadolescents with "Pure" ADHD and comorbid ADHD with learning disabilities have shown a marked reduction of prefrontal and frontal negativities (N450). As for the "Pure" Learning Disabled preadolescents, very small positivities (P450) in prefrontal and frontal regions were obtained as compared to the other pathological groups. Bilateral Electrodermal Activity during cognitive workload revealed a significant main effect for groups (P<0.00001), Left versus Right (P=0.0029) and sessions (P=0.0136). A significant main effect for the Mangina-Test performance which separated the four groups was found (P<0.000001). Overall, these data support the existence of clear differences and similarities between the pathological preadolescent groups as opposed to age-matched normal controls. The psychophysiological differentiation of these groups, provides distinct biological markers which integrate central, autonomic and neuropsychometric variables by targeting the key features of these pathologies for diagnosis and intervention strategies and by providing knowledge for the understanding of normal neurocognitive processes and functions.

  19. Structural Transitions in Elemental Tin at Ultra High Pressures up to 230 GPa

    NASA Astrophysics Data System (ADS)

    Gavriliuk, A. G.; Troyan, I. A.; Ivanova, A. G.; Aksenov, S. N.; Starchikov, S. S.; Lyubutin, I. S.; Morgenroth, W.; Glazyrin, K. V.; Mezouar, M.

    2017-12-01

    The crystal structure of elemental Sn was investigated by synchrotron X-ray diffraction at ultra high pressures up to ˜230 GPa creating in diamond anvil cells. Above 70 GPa, a pure bcc structure of Sn was observed, which is stable up to 160GPa, until an occurrence of the hcp phase was revealed. At the onset of the bcc- hcp transition at pressure of about 160GPa, the drop of the unit cell volume is about 1%. A mixture of the bcc- hcp states was observed at least up to 230GPa, and it seems that this state could exist even up to higher pressures. The fractions of the bcc and hcp phases were evaluated in the pressure range of the phase coexistence 160-230 GPa. The difference between static and dynamic compression and its effect on the V- P phase diagram of Sn are discussed.

  20. High-energy proton radiation damage of high-purity germanium detectors

    NASA Technical Reports Server (NTRS)

    Pehl, R. H.; Varnell, L. S.; Metzger, A. E.

    1978-01-01

    Quantitative studies of radiation damage in high-purity germanium gamma-ray detectors due to high-energy charged particles have been carried out; two 1.0 cm thick planar detectors were irradiated by 6 GeV/c protons. Under proton bombardment, degradation in the energy resolution was found to begin below 7 x 10 to the 7th protons/sq cm and increased proportionately in both detectors until the experiment was terminated at a total flux of 5.7 x 10 to the 8th protons/sq cm, equivalent to about a six year exposure to cosmic-ray protons in space. At the end of the irradiation, the FWHM resolution measured at 1332 keV stood at 8.5 and 13.6 keV, with both detectors of only marginal utility as a spectrometer due to the severe tailing caused by charge trapping. Annealing these detectors after proton damage was found to be much easier than after neutron damage.

  1. Inverting polar domains via electrical pulsing in metallic germanium telluride

    PubMed Central

    Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

    2017-01-01

    Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

  2. Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Witt, A. F.; Lichtensteiger, M.; Herman, C. J.

    1982-01-01

    The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

  3. Optimal Cooling of High Purity Germanium Spectrometers for Missions to Planets and Moons

    NASA Astrophysics Data System (ADS)

    Chernenko, A.; Kostenko, V.; Konev, S.; Rybkin, B.; Paschin, A.; Prokopenko, I.

    2004-04-01

    Gamma-ray spectrometers based on high purity germanium (HPGe) detectors are ultimately sensitive instruments for composition studies of surfaces of planets and moons. However, they require deep cooling well below 120K for the entire duration of space mission, and this challenges the feasibility of such instruments in the era of small and cost-efficient missions. In this paper we summarise our experience in the field of the theoretical and experimental studies of optimal cryogenic cooling of gamma-ray spectrometers based on HPGe detectors in order to find out how efficient, light and compact these instruments could be, provided such technologies like cryogenic heat pipe diodes (HPDs), efficient thermal insulation and efficient miniature cryocoolers are used.

  4. Pure chiral optical fibres.

    PubMed

    Poladian, L; Straton, M; Docherty, A; Argyros, A

    2011-01-17

    We investigate the properties of optical fibres made from chiral materials, in which a contrast in optical activity forms the waveguide, rather than a contrast in the refractive index; we refer to such structures as pure chiral fibres. We present a mathematical formulation for solving the modes of circularly symmetric examples of such fibres and examine the guidance and polarisation properties of pure chiral step-index, Bragg and photonic crystal fibre designs. Their behaviour is shown to differ for left- and right-hand circular polarisation, allowing circular polarisations to be isolated and/or guided by different mechanisms, as well as differing from equivalent non-chiral fibres. The strength of optical activity required in each case is quantified.

  5. Future ultra-speed tube-flight

    NASA Astrophysics Data System (ADS)

    Salter, Robert M.

    1994-05-01

    Future long-link, ultra-speed, surface transport systems will require electromagnetically (EM) driven and restrained vehicles operating under reduced-atmosphere in very straight tubes. Such tube-flight trains will be safe, energy conservative, pollution-free, and in a protected environment. Hypersonic (and even hyperballistic) speeds are theoretically achievable. Ultimate system choices will represent tradeoffs between amoritized capital costs (ACC) and operating costs. For example, long coasting links might employ aerodynamic lift coupled with EM restraint and drag make-up. Optimized, combined EM lift, and thrust vectors could reduce energy costs but at increased ACC. (Repulsive levitation can produce lift-over-drag l/d ratios a decade greater than aerodynamic), Alternatively, vehicle-emanated, induced-mirror fields in a conducting (aluminum sheet) road bed could reduce ACC but at substantial energy costs. Ultra-speed tube flight will demand fast-acting, high-precision sensors and computerized magnetic shimming. This same control system can maintain a magnetic 'guide way' invariant in inertial space with inertial detectors imbedded in tube structures to sense and correct for earth tremors. Ultra-speed tube flight can complete with aircraft for transit time and can provide even greater passenger convenience by single-model connections with local subways and feeder lines. Although cargo transport generally will not need to be performed at ultra speeds, such speeds may well be desirable for high throughput to optimize channel costs. Thus, a large and expensive pipeline might be replaced with small EM-driven pallets at high speeds.

  6. Future ultra-speed tube-flight

    NASA Technical Reports Server (NTRS)

    Salter, Robert M.

    1994-01-01

    Future long-link, ultra-speed, surface transport systems will require electromagnetically (EM) driven and restrained vehicles operating under reduced-atmosphere in very straight tubes. Such tube-flight trains will be safe, energy conservative, pollution-free, and in a protected environment. Hypersonic (and even hyperballistic) speeds are theoretically achievable. Ultimate system choices will represent tradeoffs between amoritized capital costs (ACC) and operating costs. For example, long coasting links might employ aerodynamic lift coupled with EM restraint and drag make-up. Optimized, combined EM lift, and thrust vectors could reduce energy costs but at increased ACC. (Repulsive levitation can produce lift-over-drag l/d ratios a decade greater than aerodynamic), Alternatively, vehicle-emanated, induced-mirror fields in a conducting (aluminum sheet) road bed could reduce ACC but at substantial energy costs. Ultra-speed tube flight will demand fast-acting, high-precision sensors and computerized magnetic shimming. This same control system can maintain a magnetic 'guide way' invariant in inertial space with inertial detectors imbedded in tube structures to sense and correct for earth tremors. Ultra-speed tube flight can complete with aircraft for transit time and can provide even greater passenger convenience by single-model connections with local subways and feeder lines. Although cargo transport generally will not need to be performed at ultra speeds, such speeds may well be desirable for high throughput to optimize channel costs. Thus, a large and expensive pipeline might be replaced with small EM-driven pallets at high speeds.

  7. Chemical Functionalization of Germanium with Dextran Brushes for Immobilization of Proteins Revealed by Attenuated Total Reflection Fourier Transform Infrared Difference Spectroscopy.

    PubMed

    Schartner, Jonas; Hoeck, Nina; Güldenhaupt, Jörn; Mavarani, Laven; Nabers, Andreas; Gerwert, Klaus; Kötting, Carsten

    2015-07-21

    Protein immobilization studied by attenuated total reflection Fourier transform infrared (ATR-FT-IR) difference spectroscopy is an emerging field enabling the study of proteins at atomic detail. Gold or glass surfaces are frequently used for protein immobilization. Here, we present an alternative method for protein immobilization on germanium. Because of its high refractive index and broad spectral window germanium is the best material for ATR-FT-IR spectroscopy of thin layers. So far, this technique was mainly used for protein monolayers, which lead to a limited signal-to-noise ratio. Further, undesired protein-protein interactions can occur in a dense layer. Here, the germanium surface was functionalized with thiols and stepwise a dextran brush was generated. Each step was monitored by ATR-FT-IR spectroscopy. We compared a 70 kDa dextran with a 500 kDa dextran regarding the binding properties. All surfaces were characterized by atomic force microscopy, revealing thicknesses between 40 and 110 nm. To analyze the capability of our system we utilized N-Ras on mono-NTA (nitrilotriacetic acid) functionalized dextran, and the amount of immobilized Ras corresponded to several monolayers. The protein stability and loading capacity was further improved by means of tris-NTA for immobilization. Small-molecule-induced changes were revealed with an over 3 times higher signal-to-noise ratio compared to monolayers. This improvement may allow the observation of very small and so far hidden changes in proteins upon stimulus. Furthermore, we immobilized green fluorescent protein (GFP) and mCherry simultaneously enabling an analysis of the surface by fluorescence microscopy. The absence of a Förster resonance energy transfer (FRET) signal demonstrated a large protein-protein distance, indicating an even distribution of the protein within the dextran.

  8. Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

    NASA Astrophysics Data System (ADS)

    Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

    2017-08-01

    Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

  9. [The left central gyral lesion and pure anarthria].

    PubMed

    Tabuchi, M; Odashima, K; Fujii, T; Suzuki, K; Saitou, J; Yamadori, A

    2000-05-01

    We report a very rare case of pure anarthria with lesion analysis. A 44-year-old right-handed man suffered from a cerebral infarction with a mild right hemiparesis and speech disturbance. An MRI of the brain 1.5 months post onset revealed a lesion confined to the left central gyrus. One month after the onset, his spontaneous speech was dysprosodic and laborious. It was contaminated with dysarthria and phonological paraphasias. However, language comprehension, repetition and naming abilities were normal. Most remarkably he showed no impairment in writing with his left hand. Over the following months, his difficulties in verbal output showed general amelioration, but the isolated impairment in the domain of articulation characterized by dysprosody, dysarthria, and phonological paraphasia persisted. As for the symptomatology of pure anarthria resulting from precentral gyral lesions, there have been controversies about its pureness. Some argue that the so called pure anarthria always shows some degree of writing disturbances, albeit mild in degree. Others maintain there certainly exists the pure type without any signs of agraphia. In the present case lesions were limited to the central gyrus but spared the lowest opercular portion. The previous reports of pure anarthria that had mild agraphia all had lesions involving the opercular portion. We conclude the sparing of this area is most likely related with sparing of writing capacity in pure anarthria.

  10. Ultra-weak sector, Higgs boson mass, and the dilaton

    DOE PAGES

    Allison, Kyle; Hill, Christopher T.; Ross, Graham G.

    2014-09-26

    The Higgs boson mass may arise from a portal coupling to a singlet fieldmore » $$\\sigma$$ which has a very large VEV $$f \\gg m_\\text{Higgs}$$. This requires a sector of "ultra-weak" couplings $$\\zeta_i$$, where $$\\zeta_i \\lesssim m_\\text{Higgs}^2 / f^2$$. Ultra-weak couplings are technically naturally small due to a custodial shift symmetry of $$\\sigma$$ in the $$\\zeta_i \\rightarrow 0$$ limit. The singlet field $$\\sigma$$ has properties similar to a pseudo-dilaton. We engineer explicit breaking of scale invariance in the ultra-weak sector via a Coleman-Weinberg potential, which requires hierarchies amongst the ultra-weak couplings.« less

  11. Germanium oxide removal by citric acid and thiol passivation from citric acid-terminated Ge(100).

    PubMed

    Collins, Gillian; Aureau, Damien; Holmes, Justin D; Etcheberry, Arnaud; O'Dwyer, Colm

    2014-12-02

    Many applications of germanium (Ge) are underpinned by effective oxide removal and surface passivation. This important surface treatment step often requires H-X (X = Cl, Br, I) or HF etchants. Here, we show that aqueous citric acid solutions are effective in the removal of GeOx. The stability of citric acid-treated Ge(100) is compared to HF and HCl treated surfaces and analyzed by X-ray photoelectron spectroscopy. Further Ge surface passivation was investigated by thiolation using alkane monothiols and dithiols. The organic passivation layers show good stability with no oxide regrowth observed after 3 days of ambient exposure.

  12. Radiation-enhanced self- and boron diffusion in germanium

    NASA Astrophysics Data System (ADS)

    Schneider, S.; Bracht, H.; Klug, J. N.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Bougeard, D.; Haller, E. E.

    2013-03-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘C and 720 ∘C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI that are compared with recent results of atomistic calculations. The behavior of self- and B diffusion in Ge under concurrent annealing and irradiation is strongly affected by the property of the Ge surface to hinder the annihilation of self-interstitials. The limited annihilation efficiency of the Ge surface can be caused by donor-type surface states favored under vacuum annealing, but the physical origin remains unsolved.

  13. Etching of germanium-tin using ammonia peroxide mixture

    NASA Astrophysics Data System (ADS)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Liang, Gengchiau; Yeo, Yee-Chia

    2015-12-01

    The wet etching of germanium-tin (Ge1-xSnx) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge1-xSnx is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge1-xSnx surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge0.918Sn0.082 samples. Both root-mean-square roughness and undulation periods of the Ge1-xSnx surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge1-xSnx using APM and may be used for the fabrication of Ge1-xSnx-based electronic and photonic devices.

  14. Modeling and Simulation of - and Silicon Germanium-Base Bipolar Transistors Operating at a Wide Range of Temperatures.

    NASA Astrophysics Data System (ADS)

    Shaheed, M. Reaz

    1995-01-01

    Higher speed at lower cost and at low power consumption is a driving force for today's semiconductor technology. Despite a substantial effort toward achieving this goal via alternative technologies such as III-V compounds, silicon technology still dominates mainstream electronics. Progress in silicon technology will continue for some time with continual scaling of device geometry. However, there are foreseeable limits on achievable device performance, reliability and scaling for room temperature technologies. Thus, reduced temperature operation is commonly viewed as a means for continuing the progress towards higher performance. Although silicon CMOS will be the first candidate for low temperature applications, bipolar devices will be used in a hybrid fashion, as line drivers or in limited critical path elements. Silicon -germanium-base bipolar transistors look especially attractive for low-temperature bipolar applications. At low temperatures, various new physical phenomena become important in determining device behavior. Carrier freeze-out effects which are negligible at room temperature, become of crucial importance for analyzing the low temperature device characteristics. The conventional Pearson-Bardeen model of activation energy, used for calculation of carrier freeze-out, is based on an incomplete picture of the physics that takes place and hence, leads to inaccurate results at low temperatures. Plasma -induced bandgap narrowing becomes more pronounced in device characteristics at low temperatures. Even with modern numerical simulators, this effect is not well modeled or simulated. In this dissertation, improved models for such physical phenomena are presented. For accurate simulation of carrier freeze-out, the Pearson-Bardeen model has been extended to include the temperature dependence of the activation energy. The extraction of the model is based on the rigorous, first-principle theoretical calculations available in the literature. The new model is shown

  15. PSYCHE Pure Shift NMR Spectroscopy.

    PubMed

    Foroozandeh, Mohammadali; Morris, Gareth; Nilsson, Mathias

    2018-03-13

    Broadband homodecoupling techniques in NMR, also known as "pure shift" methods, aim to enhance spectral resolution by suppressing the effects of homonuclear coupling interactions to turn multiplet signals into singlets. Such techniques typically work by selecting a subset of "active" nuclear spins to observe, and selectively inverting the remaining, "passive", spins to reverse the effects of coupling. Pure Shift Yielded by Chirp Excitation (PSYCHE) is one such method; it is relatively recent, but has already been successfully implemented in a range of different NMR experiments. Paradoxically, PSYCHE is one of the trickiest of pure shift NMR techniques to understand but one of the easiest to use. Here we offer some insights into theoretical and practical aspects of the method, and into the effects and importance of the experimental parameters. Some recent improvements that enhance the spectral purity of PSYCHE spectra will be presented, and some experimental frameworks including examples in 1D and 2D NMR spectroscopy, for the implementation of PSYCHE will be introduced. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Simulations of ultra-high energy cosmic rays in the local Universe and the origin of cosmic magnetic fields

    NASA Astrophysics Data System (ADS)

    Hackstein, S.; Vazza, F.; Brüggen, M.; Sorce, J. G.; Gottlöber, S.

    2018-04-01

    We simulate the propagation of cosmic rays at ultra-high energies, ≳1018 eV, in models of extragalactic magnetic fields in constrained simulations of the local Universe. We use constrained initial conditions with the cosmological magnetohydrodynamics code ENZO. The resulting models of the distribution of magnetic fields in the local Universe are used in the CRPROPA code to simulate the propagation of ultra-high energy cosmic rays. We investigate the impact of six different magneto-genesis scenarios, both primordial and astrophysical, on the propagation of cosmic rays over cosmological distances. Moreover, we study the influence of different source distributions around the Milky Way. Our study shows that different scenarios of magneto-genesis do not have a large impact on the anisotropy measurements of ultra-high energy cosmic rays. However, at high energies above the Greisen-Zatsepin-Kuzmin (GZK)-limit, there is anisotropy caused by the distribution of nearby sources, independent of the magnetic field model. This provides a chance to identify cosmic ray sources with future full-sky measurements and high number statistics at the highest energies. Finally, we compare our results to the dipole signal measured by the Pierre Auger Observatory. All our source models and magnetic field models could reproduce the observed dipole amplitude with a pure iron injection composition. Our results indicate that the dipole is observed due to clustering of secondary nuclei in direction of nearby sources of heavy nuclei. A light injection composition is disfavoured, since the increase in dipole angular power from 4 to 8 EeV is too slow compared to observation by the Pierre Auger Observatory.

  17. Canister cryogenic system for cooling germanium semiconductor detectors in borehole and marine probes

    USGS Publications Warehouse

    Boynton, G.R.

    1975-01-01

    High resolution intrinsic and lithium-drifted germanium gamma-ray detectors operate at about 77-90 K. A cryostat for borehole and marine applications has been designed that makes use of prefrozen propane canisters. Uses of such canisters simplifies cryostat construction, and the rapid exchange of canisters greatly reduces the time required to restore the detector to full holding-time capability and enhances the safety of a field operation where high-intensity 252Cf or other isotopic sources are used. A holding time of 6 h at 86 K was achieved in the laboratory in a simulated borehole probe in which a canister 3.7 cm diameter by 57 cm long was used. Longer holding times can be achieved by larger volume canisters in marine probes. ?? 1975.

  18. Temperature induced phonon behaviour in germanium selenide thin films probed by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Taube, A.; Łapińska, A.; Judek, J.; Wochtman, N.; Zdrojek, M.

    2016-08-01

    Here we report a detailed study of temperature-dependent phonon properties of exfoliated germanium selenide thin films (several tens of nanometers thick) probed by Raman spectroscopy in the 70-350 K temperature range. The temperature-dependent behavior of the positions and widths of the Raman modes was nonlinear. We concluded that the observed effects arise from anharmonic phonon-phonon interactions and are explained by the phenomenon of optical phonon decay into acoustic phonons. At temperatures above 200 K, the position of the Raman modes tended to be linearly dependent, and the first order temperature coefficients χ were  -0.0277, -0.0197 and  -0.031 cm-1 K-1 for B 3g , A g(1) and A g(2) modes, respectively.

  19. Laser-initiated explosive electron emission from flat germanium crystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Porshyn, V., E-mail: porshyn@uni-wuppertal.de; Mingels, S.; Lützenkirchen-Hecht, D.

    2016-07-28

    Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration t{sub laser} = 3.5 ns and photon energy hν = 0.54–5.90 eV) and under DC voltages <10{sup 4} V. Large bunch charges up to ∼1 μC were extracted from the cathodes for laser pulses >1 MW/cm{sup 2} corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out firstmore » direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ∼0.8 eV.« less

  20. Solution synthesis of lead seeded germanium nanowires and branched nanowire networks and their application as Li-ion battery anodes

    NASA Astrophysics Data System (ADS)

    Flynn, Grace; Palaniappan, Kumaranand; Sheehan, Martin; Kennedy, Tadhg; Ryan, Kevin M.

    2017-06-01

    Herein, we report the high density growth of lead seeded germanium nanowires (NWs) and their development into branched nanowire networks suitable for application as lithium ion battery anodes. The synthesis of the NWs from lead seeds occurs simultaneously in both the liquid zone (solution-liquid-solid (SLS) growth) and solvent rich vapor zone (vapor-liquid-solid (VLS) growth) of a high boiling point solvent growth system. The reaction is sufficiently versatile to allow for the growth of NWs directly from either an evaporated catalyst layer or from pre-defined nanoparticle seeds and can be extended to allowing extensive branched nanowire formation in a secondary reaction where these seeds are coated onto existing wires. The NWs are characterized using TEM, SEM, XRD and DF-STEM. Electrochemical analysis was carried out on both the single crystal Pb-Ge NWs and the branched Pb-Ge NWs to assess their suitability for use as anodes in a Li-ion battery. Differential capacity plots show both the germanium wires and the lead seeds cycle lithium and contribute to the specific capacity that is approximately 900 mAh g-1 for the single crystal wires, rising to approximately 1100 mAh g-1 for the branched nanowire networks.

  1. Segmentation and pulse shape discrimination techniques for rejecting background in germanium detectors

    NASA Technical Reports Server (NTRS)

    Roth, J.; Primbsch, J. H.; Lin, R. P.

    1984-01-01

    The possibility of rejecting the internal beta-decay background in coaxial germanium detectors by distinguishing between the multi-site energy losses characteristic of photons and the single-site energy losses of electrons in the range 0.2 - 2 MeV is examined. The photon transport was modeled with a Monte Carlo routine. Background rejection by both multiple segmentation and pulse shape discrimination techniques is investigated. The efficiency of a six 1 cm-thick segment coaxial detector operating in coincidence mode alone is compared to that of a two-segment (1 cm and 5 cm) detector employing both front-rear coincidence and PSD in the rear segment to isolate photon events. Both techniques can provide at least 95 percent rejection of single-site events while accepting at least 80 percent of the multi-site events above 500 keV.

  2. Preliminary Analysis of the 30-m UltraBoom Flight Test

    NASA Technical Reports Server (NTRS)

    Agnes, Gregory S.; Abelson, Robert D.; Miyake, Robert; Lin, John K. H.; Welsh, Joe; Watson, Judith J.

    2005-01-01

    Future NASA missions require long, ultra-lightweight booms to enable solar sails, large sunshields, and other gossamer-type spacecraft structures. The space experiment discussed in this paper will flight validate the non-traditional ultra lightweight rigidizable, inflatable, isogrid structure utilizing graphite shape memory polymer (GR/SMP) called UltraBoom(TradeMark). The focus of this paper is the analysis of the 3-m ground test article. The primary objective of the mission is to show that a combination of ground testing and analysis can predict the on-orbit performance of an ultra lightweight boom that is scalable, predictable, and thermomechanically stable.

  3. Pure Electron Plasmas near Thermal Equilibrium

    DTIC Science & Technology

    1990-11-01

    I University of California, San Diego Institute of Pure and Applied Physical Sciences La Jolla, CA 92093 N 0 (V) Final Technical Report N "Pure...Research/code -..... " 1112AI. VC 1/8/91 ’ , .... i ; () -ii- r INTRODUCTION Since 1982 the plasma group at UCSD has been conducting an experimental and...scale. We have also observed an unusual I = 1 instability which the previously published theoretical literature stated unconditionally was stable. The

  4. One-pot size-controlled growth of graphene-encapsulated germanium nanocrystals

    NASA Astrophysics Data System (ADS)

    Lee, Jae-Hyun; Lee, Eun-Kyung; Kang, Seog-Gyun; Jung, Su-Ho; Son, Seok-Kyun; Nam, Woo Hyun; Kim, Tae-Hoon; Choi, Byong Lyong; Whang, Dongmok

    2018-05-01

    To realize graphene-encapsulated semiconductor nanocrystals (NCs), an additional graphene coating process, which causes shape destruction and chemical contamination, has so far been inevitable. We report herein one-pot growth of uniform graphene-germanium core-shell nanocrystals (Ge@G NCs) in gram scale by the addition of methane as a carbon source during the thermal pyrolysis of germane. The methane plays a critical role in the growth of the graphene shell, as well as in the determination of the nucleation density and diameter of the NCs, similar to a surfactant in the liquid-phase growth of monodisperse NCs. By adjusting the gas ratio of precursors, a mixture of germane and methane, we can control the size of the Ge@G NCs in the range of ∼5-180 nm. The Ge@G NCs were characterized by various microscopic and spectroscopic tools, which indicated that the Ge core is single crystalline, and is completely covered by the graphene shell. We further investigated the merits of the graphene shell, which can enhance the electrical conductivity of nanocrystalline materials.

  5. Improved WIMP-search reach of the CDMS II germanium data

    DOE PAGES

    Agnese, R.

    2015-10-12

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c 2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10more » –44 and 1.18×10 –41 at 90% confidence for 60 and 8.6 GeV/c 2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c 2 WIMPs.« less

  6. Improved WIMP-search reach of the CDMS II germanium data

    DOE PAGES

    Agnese, R.

    2015-10-12

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c 2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10more » –44 and 1.18×10 –41 at 90% confidence for 60 and 8.6 GeV/c 2 WIMPs, respectively. Furthermore, this improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c 2 WIMPs.« less

  7. Spin-to-charge conversion for hot photoexcited electrons in germanium

    NASA Astrophysics Data System (ADS)

    Zucchetti, C.; Bottegoni, F.; Isella, G.; Finazzi, M.; Rortais, F.; Vergnaud, C.; Widiez, J.; Jamet, M.; Ciccacci, F.

    2018-03-01

    We investigate the spin-to-charge conversion in highly doped germanium as a function of the kinetic energy of the carriers. Spin-polarized electrons are optically generated in the Ge conduction band, and their kinetic energy is varied by changing the photon energy in the 0.7-2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. The detected signal shows a sign inversion for h ν ≈1 eV which can be related to an interplay between the spin relaxation of high-energy electrons photoexcited from the heavy-hole and light-hole bands and that of low-energy electrons promoted from the split-off band. The inferred spin-Hall angle increases by about 3 orders of magnitude within the analyzed photon energy range. Since, for increasing photon energies, the phonon contribution to spin scattering exceeds that of impurities, our result indicates that the spin-to-charge conversion mediated by phonons is much more efficient than the one mediated by impurities.

  8. Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

    NASA Astrophysics Data System (ADS)

    Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

    2018-02-01

    In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

  9. Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

    PubMed

    Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

    2018-02-02

    In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

  10. 7 CFR 201.64 - Pure live seed.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... applying the respective tolerances to the germination plus the hard seed and the pure seed. [5 FR 35, Jan... 7 Agriculture 3 2010-01-01 2010-01-01 false Pure live seed. 201.64 Section 201.64 Agriculture..., Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE (CONTINUED) FEDERAL SEED ACT FEDERAL SEED ACT...

  11. 7 CFR 201.64 - Pure live seed.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... applying the respective tolerances to the germination plus the hard seed and the pure seed. [5 FR 35, Jan... 7 Agriculture 3 2011-01-01 2011-01-01 false Pure live seed. 201.64 Section 201.64 Agriculture..., Inspections, Marketing Practices), DEPARTMENT OF AGRICULTURE (CONTINUED) FEDERAL SEED ACT FEDERAL SEED ACT...

  12. Light-curve and spectral properties of ultra-stripped core-collapse supernovae

    NASA Astrophysics Data System (ADS)

    Moriya, Takashi J.

    2017-11-01

    We discuss light-curve and spectral properties of ultra-stripped core-collapse supernovae. Ultra-stripped supernovae are supernovae with ejecta masses of only ~0.1M ⊙ whose progenitors lose their envelopes due to binary interactions with their compact companion stars. We follow the evolution of an ultra-stripped supernova progenitor until core collapse and perform explosive nucleosynthesis calculations. We then synthesize light curves and spectra of ultra-stripped supernovae based on the nucleosynthesis results. We show that ultra-stripped supernovae synthesize ~0.01M ⊙ of the radioactive 56Ni, and their typical peak luminosity is around 1042 erg s-1 or -16 mag. Their typical rise time is 5 - 10 days. By comparing synthesized and observed spectra, we find that SN 2005ek and some of so-called calcium-rich gap transients like PTF10iuv may be related to ultra-stripped supernovae.

  13. New Bell inequalities for three-qubit pure states

    NASA Astrophysics Data System (ADS)

    Das, Arpan; Datta, Chandan; Agrawal, Pankaj

    2017-12-01

    We introduce a set of Bell inequalities for a three-qubit system. Each inequality within this set is violated by all generalized GHZ states. The more entangled a generalized GHZ state is, the more will be the violation. This establishes a relation between nonlocality and entanglement for this class of states. Certain inequalities within this set are violated by pure biseparable states. We also provide numerical evidence that at least one of these Bell inequalities is violated by a pure genuinely entangled state. These Bell inequalities can distinguish between separable, biseparable and genuinely entangled pure three-qubit states. We also generalize this set to n-qubit systems and may be suitable to characterize the entanglement of n-qubit pure states.

  14. Periodic structures on germanium induced by high repetition rate femtosecond laser

    NASA Astrophysics Data System (ADS)

    Lin, Xiaoming; Li, Xiaohong; Zhang, Yanbin; Xie, Changxin; Liu, Kaijun; Zhou, Qiang

    2018-05-01

    Laser-induced periodic surface structures (LIPSS) are studied on germanium surface in air by the femtosecond pulsed laser with repetition frequency of 76 MHz and wavelength λ of 800 nm. Three types of LIPSS were found and they are low-spatial-frequency LIPSS (LSFL), high-spatial-frequency LIPSS (HSFL), and LSFL superimposed with HSFL. The period ΛLSFL of LSFL shrinks quickly from approximately 650 nm to 400 nm (∼λ/2) when lowering the scanning speed. Comparatively, the period ΛHSFL of HSFL keeps almost constant between 90 and 100 nm (∼λ/8) when the scanning speed and the laser pulse energy vary. LSFL and HSFL coexist when the laser pulse energy is around 3.3 nJ/pulse and the scanning speed ranges between 3 and 8 mm/s. The surface plasmon polariton waves make a contribution to the formation of LIPSS and the fourth harmonic generation (FHG) might be involved in the formation of HSFL.

  15. Ultra-widefield retinal imaging through a black intraocular lens.

    PubMed

    Yusuf, Imran H; Fung, Timothy H M; Patel, Chetan K

    2015-09-01

    To evaluate the feasibility of ultra-widefield retinal imaging in patients with near infrared (IR)-transmitting black intraocular lenses (IOLs). Oxford Eye Hospital, Oxford, United Kingdom. Laboratory evaluation of a diagnostic technology with interventional case report. The field of retinal imaging through a Morcher poly(methyl methacrylate) (PMMA) black IOL was determined in a purpose-built adult schematic model eye with the HRA2 Spectralis confocal scanning laser ophthalmoscope using standard imaging, Staurenghi retina lens-assisted imaging, and ultra-widefield noncontact imaging. Retinal imaging using each modality was then performed on a patient implanted with another Morcher PMMA black IOL model. Ultra-widefield noncontact imaging and lens-assisted imaging captured up to 150 degrees of field (versus 40 degrees with a standard confocal scanning laser ophthalmoscope). Ultra-widefield retinal images were successfully acquired in a patient eye with a black IOL. This study has identified the first ultra-widefield retinal imaging modalities for patients with near IR-transmitting black IOLs. Should larger studies confirm this finding, noncontact ultra-widefield confocal scanning laser ophthalmoscopy might be considered the gold standard imaging technique for retinal surveillance in patients with near IR-transmitting black IOLs. No author has a financial or proprietary interest in any material or method mentioned. Copyright © 2015 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

  16. Science: Pure or Applied?

    ERIC Educational Resources Information Center

    Evans, Peter

    1980-01-01

    Through a description of some of the activities which take place in his science classroom, the author makes a strong case for the inclusion of technology, or applied science, rather than pure science in the primary curriculum. (KC)

  17. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Grezes, C.; Alzate, J. G.; Cai, X.

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

  18. Quantile Regression for Analyzing Heterogeneity in Ultra-high Dimension

    PubMed Central

    Wang, Lan; Wu, Yichao

    2012-01-01

    Ultra-high dimensional data often display heterogeneity due to either heteroscedastic variance or other forms of non-location-scale covariate effects. To accommodate heterogeneity, we advocate a more general interpretation of sparsity which assumes that only a small number of covariates influence the conditional distribution of the response variable given all candidate covariates; however, the sets of relevant covariates may differ when we consider different segments of the conditional distribution. In this framework, we investigate the methodology and theory of nonconvex penalized quantile regression in ultra-high dimension. The proposed approach has two distinctive features: (1) it enables us to explore the entire conditional distribution of the response variable given the ultra-high dimensional covariates and provides a more realistic picture of the sparsity pattern; (2) it requires substantially weaker conditions compared with alternative methods in the literature; thus, it greatly alleviates the difficulty of model checking in the ultra-high dimension. In theoretic development, it is challenging to deal with both the nonsmooth loss function and the nonconvex penalty function in ultra-high dimensional parameter space. We introduce a novel sufficient optimality condition which relies on a convex differencing representation of the penalized loss function and the subdifferential calculus. Exploring this optimality condition enables us to establish the oracle property for sparse quantile regression in the ultra-high dimension under relaxed conditions. The proposed method greatly enhances existing tools for ultra-high dimensional data analysis. Monte Carlo simulations demonstrate the usefulness of the proposed procedure. The real data example we analyzed demonstrates that the new approach reveals substantially more information compared with alternative methods. PMID:23082036

  19. Ultra-thin plasma panel radiation detector

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Friedman, Peter S.

    An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

  20. ThermoData Engine Database - Pure Compounds and Binary Mixtures

    National Institute of Standards and Technology Data Gateway

    SRD 103b NIST ThermoData Engine Version 6.0 - Pure CompoThermoData Engine Database - Pure Compounds and Binary Mixtures (PC database for purchase)   This database contains property data for more than 21,000 pure compounds, 37,500 binary mixtures, 10,000 ternary mixtures, and 6,000 chemical reactions.

  1. Internal oxidation phenomenon in pure copper

    NASA Astrophysics Data System (ADS)

    Rudolf, Rebeka; Anžel, Ivan

    2009-04-01

    This paper presents two special kinds of internal oxidation phenomenon that can take place in pure metals containing a high concentration of non-equilibrium defects. These processes are Internal Oxidation (IO) and Internal Carbonisation (IC). Both processes start with the dissolution of oxidant (O or C) into the pure metal at the free surfaces, and continue with the diffusion of oxidant atoms into the metal matrix volume, where they are trapped at numerous defects within the crystal lattice. Increasing oxidant activity at these places causes local oxidation of the matrix and, consequently, precipitation of fine oxide or graphite particles. The IO and IC processes were tested on the rapidly solidified pure copper which was produced by the Chill-Block Melt Spinning Technique. Analysis of the IO process showed the formation of Cu-Cu2O, and the formation of Cu-C composite from the IC process.

  2. Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

    2007-12-01

    Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

  3. Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

    NASA Astrophysics Data System (ADS)

    Maggioni, G.; Carturan, S.; Raniero, W.; Riccetto, S.; Sgarbossa, F.; Boldrini, V.; Milazzo, R.; Napoli, D. R.; Scarpa, D.; Andrighetto, A.; Napolitani, E.; De Salvador, D.

    2018-03-01

    A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin ( ≤ 100 nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

  4. Miso. III. Pure culture fermentation with Saccharomyces rouxii.

    PubMed

    HESSELTINE, C W; SHIBASAKI, K

    1961-11-01

    Excellent miso has been prepared with soybean grits inoculated with a pure culture of Saccharomyces rouxii strain NRRL Y-2547. Pure culture inoculum of this osmophilic yeast was prepared by growing the culture in aerated flasks on a yeast extract medium with a salt concentration equal to that used in the manufacture of miso. It has also been found possible to make miso from whole beans with the above culture. The advantages of pure culture fermentation in producing miso are discussed.

  5. Pure science and the problem of progress.

    PubMed

    Douglas, Heather

    2014-06-01

    How should we understand scientific progress? Kuhn famously discussed science as its own internally driven venture, structured by paradigms. He also famously had a problem describing progress in science, as problem-solving ability failed to provide a clear rubric across paradigm change--paradigm changes tossed out problems as well as solving them. I argue here that much of Kuhn's inability to articulate a clear view of scientific progress stems from his focus on pure science and a neglect of applied science. I trace the history of the distinction between pure and applied science, showing how the distinction came about, the rhetorical uses to which the distinction has been put, and how pure science came to be both more valued by scientists and philosophers. I argue that the distinction between pure and applied science does not stand up to philosophical scrutiny, and that once we relinquish it, we can provide Kuhn with a clear sense of scientific progress. It is not one, though, that will ultimately prove acceptable. For that, societal evaluations of scientific work are needed.

  6. Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

    2009-01-01

    This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

  7. Etching of germanium-tin using ammonia peroxide mixture

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount ofmore » Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.« less

  8. A segmented, enriched N-type germanium detector for neutrinoless double beta-decay experiments

    NASA Astrophysics Data System (ADS)

    Leviner, L. E.; Aalseth, C. E.; Ahmed, M. W.; Avignone, F. T.; Back, H. O.; Barabash, A. S.; Boswell, M.; De Braeckeleer, L.; Brudanin, V. B.; Chan, Y.-D.; Egorov, V. G.; Elliott, S. R.; Gehman, V. M.; Hossbach, T. W.; Kephart, J. D.; Kidd, M. F.; Konovalov, S. I.; Lesko, K. T.; Li, Jingyi; Mei, D.-M.; Mikhailov, S.; Miley, H.; Radford, D. C.; Reeves, J.; Sandukovsky, V. G.; Umatov, V. I.; Underwood, T. A.; Tornow, W.; Wu, Y. K.; Young, A. R.

    2014-01-01

    We present data characterizing the performance of the first segmented, N-type Ge detector, isotopically enriched to 85% 76Ge. This detector, based on the Ortec PT6×2 design and referred to as SEGA (Segmented, Enriched Germanium Assembly), was developed as a possible prototype for neutrinoless double beta-decay measurements by the MAJORANA collaboration. We present some of the general characteristics (including bias potential, efficiency, leakage current, and integral cross-talk) for this detector in its temporary cryostat. We also present an analysis of the resolution of the detector, and demonstrate that for all but two segments there is at least one channel that reaches the MAJORANA resolution goal below 4 keV FWHM at 2039 keV, and all channels are below 4.5 keV FWHM.

  9. Thermoelectric Figure-of-Merit of Nanostructured Silicon with a Low Concentration of Germanium

    NASA Astrophysics Data System (ADS)

    Zhu, Gaohua; Lee, Hohyun; Lan, Yucheng; Wang, Xiaowei; Joshi, Giri; Wang, Dezhi; Yang, Jian; Dresselhaus, Mildred; Chen, Gang; Ren, Zhifeng

    2009-03-01

    The thermoelectric properties of nanostructured silicon (Si) with a low concentration of germanium (Ge) are investigated. A low concentration of Ge leads to a significant cost reduction of the final product since Ge is at least 100 times more expensive than Si. By using only 5 atomic % Ge (Si95Ge5), we have achieved a thermoelectric figure-of-merit (ZT) of 0.95, similar to the ZT in the large grained Si80Ge20 alloy that is three times more expensive, and is almost four times that of the large grained bulk Si. The enhancement in the thermoelectric ZT for the nanostructured Si95Ge5 is mostly due to the reduced thermal conductivity caused by phonon scattering at the increased grain boundaries and the Ge alloying effect.

  10. Formation of various types of nanostructures on germanium surface by nanosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Mikolutskiy, S. I.; Khasaya, R. R.; Khomich, Yu V.; Yamshchikov, V. A.

    2018-03-01

    The paper describes the formation of micro- and nanostructures in different parts of irradiation zone on germanium surface by multiple action of nanosecond pulses of ArF-laser. It proposes a simple method using only one laser beam without any optional devices and masks for surface treatment. Hexa- and pentagonal cells with submicron dimensions along the surface were observed in peripheral zone of irradiation spot by atomic-force microscopy. Nanostructures in the form of bulbs with rounded peaks with lateral sizes of 40-120 nm were obtained in peripheral low-intensity region of the laser spot. Considering experimental data on material processing by nanosecond laser pulses, a classification of five main types of surface reliefs formed by nanosecond laser pulses with energy density near or slightly above ablation threshold was proposed.

  11. Improving distillation method and device of tritiated water analysis for ultra high decontamination efficiency.

    PubMed

    Fang, Hsin-Fa; Wang, Chu-Fang; Lin, Chien-Kung

    2015-12-01

    It is important that monitoring environmental tritiated water for understanding the contamination dispersion of the nuclear facilities. Tritium is a pure beta radionuclide which is usually measured by Liquid Scintillation Counting (LSC). The average energy of tritum beta is only 5.658 keV that makes the LSC counting of tritium easily be interfered by the beta emitted by other radionuclides. Environmental tritiated water samples usually need to be decontaminated by distillation for reducing the interference. After Fukushima Nucleaer Accident, the highest gross beta concentration of groundwater samples obtained around Fukushima Daiichi Nuclear Power Station is over 1,000,000 Bq/l. There is a need for a distillation with ultra-high decontamination efficiency for environmental tritiated water analysis. This study is intended to improve the heating temperature control for better sub-boiling distillation control and modify the height of the container of the air cooling distillation device for better fractional distillation effect. The DF of Cs-137 of the distillation may reach 450,000 which is far better than the prior study. The average loss rate of the improved method and device is about 2.6% which is better than the bias value listed in the ASTM D4107-08. It is proven that the modified air cooling distillation device can provide an easy-handling, water-saving, low cost and effective way of purifying water samples for higher beta radionuclides contaminated water samples which need ultra-high decontamination treatment. Copyright © 2015 Elsevier Ltd. All rights reserved.

  12. Transversely polarized sub-diffraction optical needle with ultra-long depth of focus

    NASA Astrophysics Data System (ADS)

    Guan, Jian; Lin, Jie; Chen, Chen; Ma, Yuan; Tan, Jiubin; Jin, Peng

    2017-12-01

    We generated purely transversely polarized sub-diffraction optical needles with ultra-long depth of focus (DOF) by focusing azimuthally polarized (AP) beams that were modulated by a vortex 0-2 π phase plate and binary phase diffraction optical elements (DOEs). The concentric belts' radii of the DOEs were optimized by a hybrid genetic particle swarm optimization (HGPSO) algorithm. For the focusing system with the numerical aperture (NA) of 0.95, an optical needle with the full width at half maximum (FWHM) of 0.40 λ and the DOF of 6.23 λ was generated. Similar optical needles were also generated by binary phase DOEs with different belts. The results demonstrated that the binary phase DOEs could achieve smaller FWHMs and longer DOFs simultaneously. The generated needles were circularly polarized on the z-axis and there were no longitudinally polarized components in the focal fields. The radius fabrication errors of a DOE have little effect on the optical needle produced by itself. The generated optical needles can be applied to the fields of photolithography, high-density optical data storage, microscope imaging and particle trapping.

  13. Ultra-low dose naltrexone enhances cannabinoid-induced antinociception.

    PubMed

    Paquette, Jay; Olmstead, Mary C; Olmstead, Mary

    2005-12-01

    Both opioids and cannabinoids have inhibitory effects at micromolar doses, which are mediated by activated receptors coupling to Gi/o-proteins. Surprisingly, the analgesic effects of opioids are enhanced by ultra-low doses (nanomolar to picomolar) of the opioid antagonist, naltrexone. As opioid and cannabinoid systems interact, this study investigated whether ultra-low dose naltrexone also influences cannabinoid-induced antinociception. Separate groups of Long-Evans rats were tested for antinociception following an injection of vehicle, a sub-maximal dose of the cannabinoid agonist WIN 55 212-2, naltrexone (an ultra-low or a high dose) or a combination of WIN 55 212-2 and naltrexone doses. Tail-flick latencies were recorded for 3 h, at 10-min intervals for the first hour, and at 15-min intervals thereafter. Ultra-low dose naltrexone elevated WIN 55 212-2-induced tail flick thresholds without extending its duration of action. This enhancement was replicated in animals receiving intraperitoneal or intravenous injections. A high dose of naltrexone had no effect on WIN 55 212-2-induced tail flick latencies, but a high dose of the cannabinoid 1 receptor antagonist SR 141716 blocked the elevated tail-flick thresholds produced by WIN 55 212-2+ultra-low dose naltrexone. These data suggest a mechanism of cannabinoid-opioid interaction whereby activated opioid receptors that couple to Gs-proteins may attenuate cannabinoid-induced antinociception and/or motor functioning.

  14. Ultra-low background mass spectrometry for rare-event searches

    NASA Astrophysics Data System (ADS)

    Dobson, J.; Ghag, C.; Manenti, L.

    2018-01-01

    Inductively Coupled Plasma Mass Spectrometry (ICP-MS) allows for rapid, high-sensitivity determination of trace impurities, notably the primordial radioisotopes 238U and 232Th, in candidate materials for low-background rare-event search experiments. We describe the setup and characterisation of a dedicated low-background screening facility at University College London where we operate an Agilent 7900 ICP-MS. The impact of reagent and carrier gas purity is evaluated and we show that twice-distilled ROMIL-SpATM-grade nitric acid and zero-grade Ar gas delivers similar sensitivity to ROMIL-UpATM-grade acid and research-grade gas. A straightforward procedure for sample digestion and analysis of materials with U/Th concentrations down to 10 ppt g/g is presented. This includes the use of 233U and 230Th spikes to correct for signal loss from a range of sources and verification of 238U and 232Th recovery through digestion and analysis of a certified reference material with a complex sample matrix. Finally, we demonstrate assays and present results from two sample preparation and assay methods: a high-sensitivity measurement of ultra-pure Ti using open digestion techniques, and a closed vessel microwave digestion of a nickel-chromium-alloy using a multi-acid mixture.

  15. Characterization of Polyimide Foams for Ultra-Lightweight Space Structures

    NASA Technical Reports Server (NTRS)

    Meador, Michael (Technical Monitor); Hillman, Keithan; Veazie, David R.

    2003-01-01

    Ultra-lightweight materials have played a significant role in nearly every area of human activity ranging from magnetic tapes and artificial organs to atmospheric balloons and space inflatables. The application range of ultra-lightweight materials in past decades has expanded dramatically due to their unsurpassed efficiency in terms of low weight and high compliance properties. A new generation of ultra-lightweight materials involving advanced polymeric materials, such as TEEK (TM) polyimide foams, is beginning to emerge to produce novel performance from ultra-lightweight systems for space applications. As a result, they require that special conditions be fulfilled to ensure adequate structural performance, shape retention, and thermal stability. It is therefore important and essential to develop methodologies for predicting the complex properties of ultra-lightweight foams. To support NASA programs such as the Reusable Launch Vehicle (RLV), Clark Atlanta University, along with SORDAL, Inc., has initiated projects for commercial process development of polyimide foams for the proposed cryogenic tank integrated structure (see figure 1). Fabrication and characterization of high temperature, advanced aerospace-grade polyimide foams and filled foam sandwich composites for specified lifetimes in NASA space applications, as well as quantifying the lifetime of components, are immensely attractive goals. In order to improve the development, durability, safety, and life cycle performance of ultra-lightweight polymeric foams, test methods for the properties are constant concerns in terms of timeliness, reliability, and cost. A major challenge is to identify the mechanisms of failures (i.e., core failure, interfacial debonding, and crack development) that are reflected in the measured properties. The long-term goal of the this research is to develop the tools and capabilities necessary to successfully engineer ultra-lightweight polymeric foams. The desire is to reduce density

  16. Ultra-processed foods and the nutritional dietary profile in Brazil

    PubMed Central

    Louzada, Maria Laura da Costa; Martins, Ana Paula Bortoletto; Canella, Daniela Silva; Baraldi, Larissa Galastri; Levy, Renata Bertazzi; Claro, Rafael Moreira; Moubarac, Jean-Claude; Cannon, Geoffrey; Monteiro, Carlos Augusto

    2015-01-01

    OBJECTIVE To assess the impact of consuming ultra-processed foods on the nutritional dietary profile in Brazil. METHODS Cross-sectional study conducted with data from the module on individual food consumption from the 2008-2009 Pesquisa de Orçamentos Familiares (POF – Brazilian Family Budgets Survey). The sample, which represented the section of the Brazilian population aged 10 years or over, involved 32,898 individuals. Food consumption was evaluated by two 24-hour food records. The consumed food items were classified into three groups: natural or minimally processed, including culinary preparations with these foods used as a base; processed; and ultra-processed. RESULTS The average daily energy consumption per capita was 1,866 kcal, with 69.5% being provided by natural or minimally processed foods, 9.0% by processed foods and 21.5% by ultra-processed food. The nutritional profile of the fraction of ultra-processed food consumption showed higher energy density, higher overall fat content, higher saturated and trans fat, higher levels of free sugar and less fiber, protein, sodium and potassium, when compared to the fraction of consumption related to natural or minimally processed foods. Ultra-processed foods presented generally unfavorable characteristics when compared to processed foods. Greater inclusion of ultra-processed foods in the diet resulted in a general deterioration in the dietary nutritional profile. The indicators of the nutritional dietary profile of Brazilians who consumed less ultra-processed foods, with the exception of sodium, are the stratum of the population closer to international recommendations for a healthy diet. CONCLUSIONS The results from this study highlight the damage to health that is arising based on the observed trend in Brazil of replacing traditional meals, based on natural or minimally processed foods, with ultra-processed foods. These results also support the recommendation of avoiding the consumption of these kinds of foods

  17. Ultra-processed foods and the nutritional dietary profile in Brazil.

    PubMed

    Costa Louzada, Maria Laura da; Martins, Ana Paula Bortoletto; Canella, Daniela Silva; Baraldi, Larissa Galastri; Levy, Renata Bertazzi; Claro, Rafael Moreira; Moubarac, Jean-Claude; Cannon, Geoffrey; Monteiro, Carlos Augusto

    2015-01-01

    OBJECTIVE To assess the impact of consuming ultra-processed foods on the nutritional dietary profile in Brazil. METHODS Cross-sectional study conducted with data from the module on individual food consumption from the 2008-2009 Pesquisa de Orçamentos Familiares (POF - Brazilian Family Budgets Survey). The sample, which represented the section of the Brazilian population aged 10 years or over, involved 32,898 individuals. Food consumption was evaluated by two 24-hour food records. The consumed food items were classified into three groups: natural or minimally processed, including culinary preparations with these foods used as a base; processed; and ultra-processed. RESULTS The average daily energy consumption per capita was 1,866 kcal, with 69.5% being provided by natural or minimally processed foods, 9.0% by processed foods and 21.5% by ultra-processed food. The nutritional profile of the fraction of ultra-processed food consumption showed higher energy density, higher overall fat content, higher saturated and trans fat, higher levels of free sugar and less fiber, protein, sodium and potassium, when compared to the fraction of consumption related to natural or minimally processed foods. Ultra-processed foods presented generally unfavorable characteristics when compared to processed foods. Greater inclusion of ultra-processed foods in the diet resulted in a general deterioration in the dietary nutritional profile. The indicators of the nutritional dietary profile of Brazilians who consumed less ultra-processed foods, with the exception of sodium, are the stratum of the population closer to international recommendations for a healthy diet. CONCLUSIONS The results from this study highlight the damage to health that is arising based on the observed trend in Brazil of replacing traditional meals, based on natural or minimally processed foods, with ultra-processed foods. These results also support the recommendation of avoiding the consumption of these kinds of foods.

  18. Investigation of Acidithiobacillus ferrooxidans in pure and mixed-species culture for bioleaching of Theisen sludge from former copper smelting.

    PubMed

    Klink, C; Eisen, S; Daus, B; Heim, J; Schlömann, M; Schopf, S

    2016-06-01

    The aim of this study was to investigate the potential of bioleaching for the treatment of an environmentally hazardous waste, a blast-furnace flue dust designated Theisen sludge. Bioleaching of Theisen sludge was investigated at acidic conditions with Acidithiobacillus ferrooxidans in pure and mixed-species culture with Acidiphilium. In shaking-flask experiments, bioleaching parameters (pH, redox potential, zinc extraction from ZnS, ferrous- and ferric-iron concentration) were controlled regularly. The analysis of the dissolved metals showed that 70% zinc and 45% copper were extracted. Investigations regarding the arsenic and antimony species were performed. When iron ions were lacking, animonate (Sb(V)) and total arsenic concentration were highest in solution. The bioleaching approach was scaled up in stirred-tank bioreactors resulting in higher leaching efficiency of valuable trace elements. Concentrations of dissolved antimony were approx. 23 times, and of cobalt, germanium, and rhenium three times higher in comparison to shaking-flask experiments, when considering the difference in solid load of Theisen sludge. The extraction of base and trace metals from Theisen sludge, despite of its high content of heavy metals and organic compounds, was feasible with iron-oxidizing acidophilic bacteria. In stirred-tank bioreactors, the mixed-species culture performed better. To the best of our knowledge, this study is the first providing an appropriate biological technology for the treatment of Theisen sludge to win valuable elements. © 2016 The Society for Applied Microbiology.

  19. Weighing Ultra-Cool Stars

    NASA Astrophysics Data System (ADS)

    2004-05-01

    Large Ground-Based Telescopes and Hubble Team-Up to Perform First Direct Brown Dwarf Mass Measurement [1] Summary Using ESO's Very Large Telescope at Paranal and a suite of ground- and space-based telescopes in a four-year long study, an international team of astronomers has measured for the first time the mass of an ultra-cool star and its companion brown dwarf. The two stars form a binary system and orbit each other in about 10 years. The team obtained high-resolution near-infrared images; on the ground, they defeated the blurring effect of the terrestrial atmosphere by means of adaptive optics techniques. By precisely determining the orbit projected on the sky, the astronomers were able to measure the total mass of the stars. Additional data and comparison with stellar models then yield the mass of each of the components. The heavier of the two stars has a mass around 8.5% of the mass of the Sun and its brown dwarf companion is even lighter, only 6% of the solar mass. Both objects are relatively young with an age of about 500-1,000 million years. These observations represent a decisive step towards the still missing calibration of stellar evolution models for very-low mass stars. PR Photo 19a/04: Orbit of the ultra-cool stars in 2MASSW J0746425+2000321. PR Photo 19b/04: Animated Gif of the orbital motion. Telephone number star Even though astronomers have found several hundreds of very low mass stars and brown dwarfs, the fundamental properties of these extreme objects, such as masses and surface temperatures, are still not well known. Within the cosmic zoo, these ultra-cool stars represent a class of "intermediate" objects between giant planets - like Jupiter - and "normal" stars less massive than our Sun, and to understand them well is therefore crucial to the field of stellar astrophysics. The problem with these ultra-cool stars is that contrary to normal stars that burn hydrogen in their central core, no unique relation exists between the luminosity of the

  20. Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

    NASA Astrophysics Data System (ADS)

    Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

    2017-11-01

    A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.