Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

NASA Astrophysics Data System (ADS)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

PubMed

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C. Y.

1977-01-01

A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty

PubMed Central

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence. PMID:24163567

Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency

NASA Astrophysics Data System (ADS)

Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.

2017-10-01

An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.

Magneto-optical Kerr rotation and color in ultrathin lossy dielectric

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Hai; Qu, Xin; Zhou, Yun song; Li, Li na

2017-05-01

Ultra-thin optical coating comprising nanometer-thick silicon absorbing films on iron substrates can display strong optical interference effects. A resonance peak of ∼1.6^\\circ longitudinal Kerr rotation with the silicon thickness of ∼47 \\text{nm} was found at the wavelength of 660 nm. The optical properties of silicon thin films were well controlled by the sputtering power. Non-iridescence color exhibition and Kerr rotation enhancement can be manipulated and encoded individually.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz

2016-08-01

Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

Direct glass bonded high specific power silicon solar cells for space applications

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Rand, J. A.; Cummings, J. R.; Lampo, S. M.; Shreve, K. P.; Barnett, Allen M.

1991-01-01

A lightweight, radiation hard, high performance, ultra-thin silicon solar cell is described that incorporates light trapping and a cover glass as an integral part of the device. The manufacturing feasibility of high specific power, radiation insensitive, thin silicon solar cells was demonstrated experimentally and with a model. Ultra-thin, light trapping structures were fabricated and the light trapping demonstrated experimentally. The design uses a micro-machined, grooved back surface to increase the optical path length by a factor of 20. This silicon solar cell will be highly tolerant to radiation because the base width is less than 25 microns making it insensitive to reduction in minority carrier lifetime. Since the silicon is bonded without silicone adhesives, this solar cell will also be insensitive to UV degradation. These solar cells are designed as a form, fit, and function replacement for existing state of the art silicon solar cells with the effect of simultaneously increasing specific power, power/area, and power supply life. Using a 3-mil thick cover glass and a 0.3 g/sq cm supporting Al honeycomb, a specific power for the solar cell plus cover glass and honeycomb of 80.2 W/Kg is projected. The development of this technology can result in a revolutionary improvement in high survivability silicon solar cell products for space with the potential to displace all existing solar cell technologies for single junction space applications.

Low-cost ultra-thin broadband terahertz beam-splitter.

PubMed

Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

2012-02-27

A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Method for fabricating pixelated silicon device cells

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

2015-08-18

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

Solar Cells for Lunar Application

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Ignatiev, Alex

1997-01-01

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

NASA Astrophysics Data System (ADS)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

Stress analysis of ultra-thin silicon chip-on-foil electronic assembly under bending

NASA Astrophysics Data System (ADS)

Wacker, Nicoleta; Richter, Harald; Hoang, Tu; Gazdzicki, Pawel; Schulze, Mathias; Angelopoulos, Evangelos A.; Hassan, Mahadi-Ul; Burghartz, Joachim N.

2014-09-01

In this paper we investigate the bending-induced uniaxial stress at the top of ultra-thin (thickness \\leqslant 20 μm) single-crystal silicon (Si) chips adhesively attached with the aid of an epoxy glue to soft polymeric substrate through combined theoretical and experimental methods. Stress is first determined analytically and numerically using dedicated models. The theoretical results are validated experimentally through piezoresistive measurements performed on complementary metal-oxide-semiconductor (CMOS) transistors built on specially designed chips, and through micro-Raman spectroscopy investigation. Stress analysis of strained ultra-thin chips with CMOS circuitry is crucial, not only for the accurate evaluation of the piezoresistive behavior of the built-in devices and circuits, but also for reliability and deformability analysis. The results reveal an uneven bending-induced stress distribution at the top of the Si-chip that decreases from the central area towards the chip's edges along the bending direction, and increases towards the other edges. Near these edges, stress can reach very high values, facilitating the emergence of cracks causing ultimate chip failure.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Surface plasmons in new waveguide structures containing ultra-thin metal and silicon layers

NASA Astrophysics Data System (ADS)

Shabat, M. M.; Ubeid, M. F.; Abu Rahma, M. A.

2018-05-01

Reflected and transmitted powers due to the interaction of electromagnetic waves with a structure containing thin metal and silicon layer are investigated in more detail. The formulations for the transverse electric wave case are provided. Transfer matrix method is used to find the reflection and the transmission coefficients at each interface. Numerical results are presented to show the effect of the structure parameters, the incidence angle and the wavelength on the reflected, transmitted and loss powers.

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less

Ultra-low-mass flexible planar solar arrays using 50-micron-thick solar cells

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Rayl, G.

1978-01-01

A conceptual design study has been completed which has shown the feasibility of ultra-low-mass planar solar arrays with specific power of 200 watts/kilogram. The beginning of life (BOL) power output of the array designs would be 10 kW at 1 astronomical unit (AU) and a 55C deg operating temperature. Two designs were studied: a retractable rollout design and a non-retractable fold-out. The designs employed a flexible low-mass blanket and low-mass structures. The blanket utilized 2 x 2 cm high-efficiency (13.5% at 28C deg AM0), ultra-thin (50 micron), silicon solar cells protected by thin (75 micron) plastic encapsulants. The structural design utilized the 'V'-stiffened approach which allows a lower mass boom to be used. In conjunction with the conceptual design, modules using the thin cells and plastic encapsulant were designed and fabricated.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

A strong electro-optically active lead-free ferroelectric integrated on silicon

NASA Astrophysics Data System (ADS)

Abel, Stefan; Stöferle, Thilo; Marchiori, Chiara; Rossel, Christophe; Rossell, Marta D.; Erni, Rolf; Caimi, Daniele; Sousa, Marilyne; Chelnokov, Alexei; Offrein, Bert J.; Fompeyrine, Jean

2013-04-01

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of reff=148 pm V-1, which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

PubMed

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Specific heat measurement set-up for quench condensed thin superconducting films.

PubMed

Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

2014-05-01

We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

Ultra-stretchable and skin-mountable strain sensors using carbon nanotubes-Ecoflex nanocomposites.

PubMed

Amjadi, Morteza; Yoon, Yong Jin; Park, Inkyu

2015-09-18

Super-stretchable, skin-mountable, and ultra-soft strain sensors are presented by using carbon nanotube percolation network-silicone rubber nanocomposite thin films. The applicability of the strain sensors as epidermal electronic systems, in which mechanical compliance like human skin and high stretchability (ϵ > 100%) are required, has been explored. The sensitivity of the strain sensors can be tuned by the number density of the carbon nanotube percolation network. The strain sensors show excellent hysteresis performance at different strain levels and rates with high linearity and small drift. We found that the carbon nanotube-silicone rubber based strain sensors possess super-stretchability and high reliability for strains as large as 500%. The nanocomposite thin films exhibit high robustness and excellent resistance-strain dependency for over ~1380% mechanical strain. Finally, we performed skin motion detection by mounting the strain sensors on different parts of the body. The maximum induced strain by the bending of the finger, wrist, and elbow was measured to be ~ 42%, 45% and 63%, respectively.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Fabrication of Gold-Coated Ultra-Thin Anodic Porous Alumina Substrates for Augmented SERS

PubMed Central

Toccafondi, Chiara; Proietti Zaccaria, Remo; Dante, Silvia; Salerno, Marco

2016-01-01

Anodic porous alumina (APA) is a nanostructured material used as a template in several nanotechnological applications. We propose the use of APA in ultra-thin form (<100 nm) for augmented surface-enhanced Raman scattering (SERS). Here, the effect of in-depth thinning of the APA nanostructures for possible maximization of SERS was addressed. Anodization was carried out on ultra-thin films of aluminum on glass and/or silicon, followed by pore-opening. Gold (Au) was overcoated and micro-Raman/SERS measurements were carried out on test target analytes. Finite integration technique simulations of the APA-Au substrate were used both for the experimental design and simulations. It was observed that, under optimized conditions of APA and Au thickness, the SERS enhancement is higher than on standard APA-Au substrates based on thin (~100 nm) APA by up to a factor of ~20 for test molecules of mercaptobenzoic acid. The agreement between model and experimental results confirms the current understanding of SERS as being mainly due to the physical origin of plasmon resonances. The reported results represent one step towards micro-technological, integrated, disposable, high-sensitivity SERS chemical sensors and biosensors based on similar substrates. PMID:28773525

Advanced lightweight optics development for space applications

NASA Astrophysics Data System (ADS)

Bilbro, James W.

1998-01-01

A considerable amount of effort over the past year has been devoted to exploring ultra-lightweight optics for two specific NASA programs, the Next Generation Space Telescope (NGST), and the High Throughput X-ray Spectrometer (HTXS). Experimental investigations have been undertaken in a variety of materials including glass, composites, nickel, beryllium, Carbon fiber reinforced Silicon Carbide (CSiC), Reaction Bonded Silicon Carbide, Chemical Vapor Deposited Silicon Carbide, and Silicon. Overall results of these investigations will be summarized, and specific details will be provided concerning the in-house development of ultra-lightweight nickel replication for both grazing incidence and normal incidence optics. This will include x-ray test results of the grazing incidence optic and cryogenic test results of the normal incidence optic. The status of two 1.5 meter diameter demonstration mirrors for NGST will also be presented. These two demonstrations are aimed at establishing the capability to manufacture and test mirrors that have an areal density of 15 kilograms per square meter. Efforts in thin membrane mirrors and Fresnel lenses will also be briefly discussed.

Ultra-thin grain-oriented silicon steel sheet fabricated by a novel way: Twin-roll strip casting and two-stage cold rolling

NASA Astrophysics Data System (ADS)

Wang, Yin-Ping; Liu, Hai-Tao; Song, Hong-Yu; Liu, Jia-Xin; Shen, Hui-Ying; Jin, Yang; Wang, Guo-Dong

2018-04-01

0.05-0.15 mm-thick ultra-thin grain-oriented silicon steel sheets were successfully produced by a novel processing route including strip casting, hot rolling, normalizing, two-stage cold rolling with intermediate annealing, primary recrystallization annealing and secondary recrystallization annealing. The evolutions of microstructure, texture and inhibitor along the processing were briefly investigated. The results showed that the initial Goss orientation originated due to the heterogenous nucleation of δ-ferrite grains during solidification. Because of the lack of shear deformation, only a few Goss grains were observed in the hot rolled sheet. After the first cold rolling and intermediate annealing, Goss texture was enhanced and distributed in the whole thickness. A small number of Goss grains having a high fraction of high energy boundaries exhibited in the primary recrystallization annealed sheet. A large number of fine and dispersed MnS and AlN and a few co-precipitates MnS and AlN with the size range of 10-70 nm were also observed. Interestingly, a well-developed secondary recrystallization microstructure characterized by 10-60 mm grains and a sharp Goss texture were finally produced in the 0.05-0.15 mm-thick ultra-thin sheets. A magnetic induction B8 of 1.72-1.84 T was obtained. Another new finding was that a few {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains also can grow up abnormally because of the high fraction of high energy boundaries and the size and number advantage, respectively. These non-Goss grains finally deteriorated the magnetic properties of the ultra-thin sheets. In addition, low surface energies of {hk0} planes may also contribute to the abnormal growth of Goss, {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains.

Visible light laser voltage probing on thinned substrates

DOEpatents

Beutler, Joshua; Clement, John Joseph; Miller, Mary A.; Stevens, Jeffrey; Cole, Jr., Edward I.

2017-03-21

The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Transmission Electron Microscopy of an In Situ Presolar Silicon Carbide Grain

NASA Technical Reports Server (NTRS)

Stroud, Rhonda M.; OGrady, Megan; Nittler, Larry R.; Alexander, Conel M. OD.

2002-01-01

We used a focused ion beam workstation to prepare ultra-thin sections of a presolar SiC grain. Our TEM studies indicate that the SiC formed by rapid vapor-phase condensation, trapping pre-existing graphite grains in random orientations. Additional information is contained in the original extended abstract.

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Storti, G.; Culik, J.; Wrigley, C.

1980-01-01

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Ultra-thin silicon solar cells for high performance panel applications

NASA Technical Reports Server (NTRS)

Gay, C. F.

1978-01-01

Solar cells have been fabricated which achieved the highest power to mass ratios and radiation stability yet reported for silicon devices. The thinnest cells (.04 mm) had initial efficiencies in excess of 2 watts per gram (AMO) and 1.7 watts per gram after an irradiation of 1 x 10 to the 15th equivalent 1 MeV electrons per square centimeter. The cells have been successfully interconnected by welding and filtered using a FEP bonded, ceria-doped microsheet of six mil thickness. Handling losses during cell manufacture and panel assembly may be minimized through the use of an integral reinforcing perimeter or ribs which remove almost all restrictions on cell thickness and area. Such a cell is typically composed of a main section which can be as thin as 0.015 mm and is supported at the edge by a thicker border (0.20 mm) of silicon.

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

PubMed Central

Meng, Xin; Byun, Young-Chul; Kim, Harrison S.; Lee, Joy S.; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung

2016-01-01

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique. PMID:28774125

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

Novel ultra-lightweight and high-resolution MEMS x-ray optics

NASA Astrophysics Data System (ADS)

Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Takagi, Utako; Mita, Makoto; Riveros, Raul; Yamaguchi, Hitomi; Kato, Fumiki; Sugiyama, Susumu; Fujiwara, Kouzou; Morishita, Kohei; Nakajima, Kazuo; Fujihira, Shinya; Kanamori, Yoshiaki; Yamasaki, Noriko Y.; Mitsuda, Kazuhisa; Maeda, Ryutaro

2009-05-01

We have been developing ultra light-weight X-ray optics using MEMS (Micro Electro Mechanical Systems) technologies.We utilized crystal planes after anisotropic wet etching of silicon (110) wafers as X-ray mirrors and succeeded in X-ray reflection and imaging. Since we can etch tiny pores in thin wafers, this type of optics can be the lightest X-ray telescope. However, because the crystal planes are alinged in certain directions, we must approximate ideal optical surfaces with flat planes, which limits angular resolution of the optics on the order of arcmin. In order to overcome this issue, we propose novel X-ray optics based on a combination of five recently developed MEMS technologies, namely silicon dry etching, X-ray LIGA, silicon hydrogen anneal, magnetic fluid assisted polishing and hot plastic deformation of silicon. In this paper, we describe this new method and report on our development of X-ray mirrors fabricated by these technologies and X-ray reflection experiments of two types of MEMS X-ray mirrors made of silicon and nickel. For the first time, X-ray reflections on these mirrors were detected in the angular response measurements. Compared to model calculations, surface roughness of the silicon and nickel mirrors were estimated to be 5 nm and 3 nm, respectively.

Development of Ultra-Fast Silicon Detectors for 4D tracking

NASA Astrophysics Data System (ADS)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

NASA Astrophysics Data System (ADS)

Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

2018-05-01

Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be adopted by other material systems as well. Based on these understandings, we have also developed colored perovskite PV by integrating an optical cavity with the perovskite semiconductors [4]. The principle and experimental results will be presented. 1. J. Y. Lee, K. T. Lee, S.Y. Seo, L. J. Guo, "Decorative power generating panels creating angle insensitive transmissive colors," Sci. Rep. 4, 4192, 2014. 2. K. T. Lee, J.Y. Lee, S.-Y. Seo, and L. J. Guo, "Colored ultra-thin hybrid photovoltaics with high quantum efficiency," Light: Science and Applications, 3, e215, 2014. 3. K. T. Lee, S.-Y. Seo, J.Y. Lee, and L. J. Guo, "Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters," Appl. Phys. Lett. 104, 231112, (2014); and "Strong resonance effect in a lossy medium-based optical cavity for angle robust spectrum filters," Adv. Mater, 26, 6324-6328, 2014. 4. K. T. Lee, M. Fukuda, L. J. Guo, "Colored, see-through perovskite solar cells employing an optical cavity," Submitted, 2015

UTBB FDSOI: Evolution and opportunities

NASA Astrophysics Data System (ADS)

Monfray, Stephane; Skotnicki, Thomas

2016-11-01

As today's 28 nm FDSOI (Fully Depleted Silicon On Insulator) technology is at the industrialization level, this paper aims to summarize the key advantages allowed by the thin BOX (Buried Oxide) of the FDSOI, through the technology evolution but also new opportunities, among logic applications and extending the possibilities offered by the platform. We will summarize how the advantages provided by the thin BOX have been first explored and developed, and how the back biasing techniques are the key to the outstanding performances provided by the FDSOI at low voltage. Then, as the FDSOI technology is also a solution to develop innovative platforms and applications, we will detail some opportunities. In particular, we will present monolithic 3D integration, ultra-low power devices for IoT (Internet of Things) and ultra-sensitive sensors.

Nanoporous membrane device for ultra high heat flux thermal management

NASA Astrophysics Data System (ADS)

Hanks, Daniel F.; Lu, Zhengmao; Sircar, Jay; Salamon, Todd R.; Antao, Dion S.; Bagnall, Kevin R.; Barabadi, Banafsheh; Wang, Evelyn N.

2018-02-01

High power density electronics are severely limited by current thermal management solutions which are unable to dissipate the necessary heat flux while maintaining safe junction temperatures for reliable operation. We designed, fabricated, and experimentally characterized a microfluidic device for ultra-high heat flux dissipation using evaporation from a nanoporous silicon membrane. With 100 nm diameter pores, the membrane can generate high capillary pressure even with low surface tension fluids such as pentane and R245fa. The suspended ultra-thin membrane structure facilitates efficient liquid transport with minimal viscous pressure losses. We fabricated the membrane in silicon using interference lithography and reactive ion etching and then bonded it to a high permeability silicon microchannel array to create a biporous wick which achieves high capillary pressure with enhanced permeability. The back side consisted of a thin film platinum heater and resistive temperature sensors to emulate the heat dissipation in transistors and measure the temperature, respectively. We experimentally characterized the devices in pure vapor-ambient conditions in an environmental chamber. Accordingly, we demonstrated heat fluxes of 665 ± 74 W/cm2 using pentane over an area of 0.172 mm × 10 mm with a temperature rise of 28.5 ± 1.8 K from the heated substrate to ambient vapor. This heat flux, which is normalized by the evaporation area, is the highest reported to date in the pure evaporation regime, that is, without nucleate boiling. The experimental results are in good agreement with a high fidelity model which captures heat conduction in the suspended membrane structure as well as non-equilibrium and sub-continuum effects at the liquid-vapor interface. This work suggests that evaporative membrane-based approaches can be promising towards realizing an efficient, high flux thermal management strategy over large areas for high-performance electronics.

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.

PubMed

Yong, Zheng; Shopov, Stefan; Mikkelsen, Jared C; Mallard, Robert; Mak, Jason C C; Voinigescu, Sorin P; Poon, Joyce K S

2017-03-20

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V_pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

PubMed

Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

2012-09-28

To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.

Lightweight, Light-Trapped, Thin GaAs Solar Cells for Spacecraft Applications.

DTIC Science & Technology

1995-10-05

improve the efficiency of this type of cell. 2 The high efficiency and light weight of the cover glass supported GaAs solar cell can have a significant...is a 3-mil cover glass and 1-mil silicone adhesive on the front surface of the GaAs solar cell. Power Output 3000 400 -{ 2400 { N 300 S18200 W/m2...the ultra-thin, light-trapped GaAs solar ceill 3. Incorporate light trapping. 0 external quantum efficiency at 850 nm increased by 5.2% 4. Develop

Passivation of Si(111) surfaces with electrochemically grafted thin organic films

NASA Astrophysics Data System (ADS)

Roodenko, K.; Yang, F.; Hunger, R.; Esser, N.; Hinrichs, K.; Rappich, J.

2010-09-01

Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.

A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

NASA Astrophysics Data System (ADS)

Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

2010-06-01

A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead-zirconate-titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Thin-film magnetless Faraday rotators for compact heterogeneous integrated optical isolators

NASA Astrophysics Data System (ADS)

Karki, Dolendra; Stenger, Vincent; Pollick, Andrea; Levy, Miguel

2017-06-01

This report describes the fabrication, characterization, and transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth-substituted rare-earth iron garnets were produced from commercially available materials by mechanical lapping, dice polishing, and crystal-ion-slicing. Eleven- μ m -thick films were shown to retain the 45 ° Faraday rotation of the bulk material to within 2 ° at 1.55 μ m wavelength without re-poling. Anti-reflection coated films evince 0.09 dB insertion loses and better than -20 dB extinction ratios. Lower extinction ratios than the bulk are ascribed to multimode propagation. Significantly larger extinction ratios are predicted for single-mode waveguides. Faraday rotation, extinction ratios, and insertion loss tests on He-ion implanted slab waveguides of the same material yielded similar results. The work culminated with bond alignment and transfer of 7 μ m -thick crystal-ion-sliced 50 × 480 μ m 2 films onto silicon photonic substrates.

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Dewetting of thin polymer films: an X-ray scattering study

NASA Astrophysics Data System (ADS)

Müller-Buschbaum, P.; Stamm, M.

1998-06-01

The surface morphology of different dewetting states of thin polymer films (polystyrene) on top of silicon substrates was investigated. With diffuse X-ray scattering in the region of total external reflection a high in-plane resolution was achieved. We observe a new nano-dewetting structure which coexists with the well known mesoscopic dewetting structures of holes, cellular pattern and drops. This nano-dewetting structure consists of small dimples with a diameter in the nanometer range. It results from the dewetting of a remaining ultra-thin polymer layer and can be explained with theoretical predictions of spinodal decomposition. The experimental results of the scattering study are confirmed with scanning-force microscopy measurements.

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, S., E-mail: rapp@hm.edu; Erlangen Graduate School in Advanced Optical Technologies; Heinrich, G.

2015-03-14

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deepermore » understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.« less

Review on analog/radio frequency performance of advanced silicon MOSFETs

NASA Astrophysics Data System (ADS)

Passi, Vikram; Raskin, Jean-Pierre

2017-12-01

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

PubMed Central

2012-01-01

The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible. PMID:22759838

Limitation of Optical Enhancement in Ultra-thin Solar Cells Imposed by Contact Selectivity.

PubMed

Islam, Raisul; Saraswat, Krishna

2018-06-11

Ultra-thin crystalline silicon (c-Si) solar cell suffers both from poor light absorption and minority carrier recombination at the contacts resulting in low contact selectivity. Yet most of the research focuses on improving the light absorption by introducing novel light trapping technique. Our work shows that for ultra-thin absorber, the benefit of optical enhancement is limited by low contact selectivity. Using simulation we observe that performance enhancement from light trapping starts to saturate as the absorber scales down because of the increase in probability of the photo-generated carriers to recombine at the metal contact. Therefore, improving the carrier selectivity of the contacts, which reduces the recombination at contacts, is important to improve the performance of the solar cell beyond what is possible by enhancing light absorption only. The impact of improving contact selectivity increases as the absorber thickness scales below 20 micrometer (μm). Light trapping provides better light management and improving contact selectivity provides better photo-generated carrier management. When better light management increases the number of photo-generated carriers, better carrier management is a useful optimization knob to achieve the efficiency close to the thermodynamic limit. Our work explores a design trade-off in detail which is often overlooked by the research community.

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

NASA Astrophysics Data System (ADS)

Qiao, Ming; Wang, Yuru; Li, Yanfei; Zhang, Bo; Li, Zhaoji

2014-11-01

A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance (Ron,sp) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature (Tmax) of 333 K at a power (P) of 1 mW/μm which is reduced by around 61 K. Meanwhile, Ron,sp and Tmax of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV.

Multi-stage phononic crystal structure for anchor-loss reduction of thin-film piezoelectric-on-silicon microelectromechanical-system resonator

NASA Astrophysics Data System (ADS)

Bao, Fei-Hong; Bao, Lei-Lei; Li, Xin-Yi; Ammar Khan, Muhammad; Wu, Hua-Ye; Qin, Feng; Zhang, Ting; Zhang, Yi; Bao, Jing-Fu; Zhang, Xiao-Sheng

2018-06-01

Thin-film piezoelectric-on-silicon acoustic wave resonators are promising for the development of system-on-chip integrated circuits with micro/nano-engineered timing reference. However, in order to realize their large potentials, a further enhancement of the quality factor (Q) is required. In this study, a novel approach, based on a multi-stage phononic crystal (PnC) structure, was proposed to achieve an ultra-high Q. A systematical study revealed that the multi-stage PnC structure formed a frequency-selective band-gap to effectively prohibit the dissipation of acoustic waves through tethers, which significantly reduced the anchor loss, leading to an insertion-loss reduction and enhancement of Q. The maximum unloaded Q u of the fabricated resonators reached the value of ∼10,000 at 109.85 MHz, indicating an enhancement by 19.4 times.

Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

PubMed

Yang, Zhenhai; Shang, Aixue; Qin, Linling; Zhan, Yaohui; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

2016-04-01

We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 μm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 μm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10  mA/cm² in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

NASA Astrophysics Data System (ADS)

Elsobky, Mourad; Mahsereci, Yigit; Keck, Jürgen; Richter, Harald; Burghartz, Joachim N.

2017-09-01

Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI) substrate to form a Hybrid System-in-Foil (HySiF), which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing) of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA) in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC). The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC), a differential difference amplifier (DDA), and a 10-bit successive approximation register (SAR) ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-05-15

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performedmore » by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.« less

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

PubMed Central

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-01-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors.

PubMed

Oakes, Landon; Westover, Andrew; Mares, Jeremy W; Chatterjee, Shahana; Erwin, William R; Bardhan, Rizia; Weiss, Sharon M; Pint, Cary L

2013-10-22

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

2013-10-01

Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

Phonon Scattering and Confinement in Crystalline Films

NASA Astrophysics Data System (ADS)

Parrish, Kevin D.

The operating temperature of energy conversion and electronic devices affects their efficiency and efficacy. In many devices, however, the reference values of the thermal properties of the materials used are no longer applicable due to processing techniques performed. This leads to challenges in thermal management and thermal engineering that demand accurate predictive tools and high fidelity measurements. The thermal conductivity of strained, nanostructured, and ultra-thin dielectrics are predicted computationally using solutions to the Boltzmann transport equation. Experimental measurements of thermal diffusivity are performed using transient grating spectroscopy. The thermal conductivities of argon, modeled using the Lennard-Jones potential, and silicon, modeled using density functional theory, are predicted under compressive and tensile strain from lattice dynamics calculations. The thermal conductivity of silicon is found to be invariant with compression, a result that is in disagreement with previous computational efforts. This difference is attributed to the more accurate force constants calculated from density functional theory. The invariance is found to be a result of competing effects of increased phonon group velocities and decreased phonon lifetimes, demonstrating how the anharmonic contribution of the atomic potential can scale differently than the harmonic contribution. Using three Monte Carlo techniques, the phonon-boundary scattering and the subsequent thermal conductivity reduction are predicted for nanoporous silicon thin films. The Monte Carlo techniques used are free path sampling, isotropic ray-tracing, and a new technique, modal ray-tracing. The thermal conductivity predictions from all three techniques are observed to be comparable to previous experimental measurements on nanoporous silicon films. The phonon mean free paths predicted from isotropic ray-tracing, however, are unphysical as compared to those predicted by free path sampling. Removing the isotropic assumption, leading to the formulation of modal ray-tracing, corrects the mean free path distribution. The effect of phonon line-of-sight is investigated in nanoporous silicon films using free path sampling. When the line-of-sight is cut off there is a distinct change in thermal conductivity versus porosity. By analyzing the free paths of an obstructed phonon mode, it is concluded that the trend change is due to a hard upper limit on the free paths that can exist due to the nanopore geometry in the material. The transient grating technique is an optical contact-less laser based experiment for measuring the in-plane thermal diffusivity of thin films and membranes. The theory of operation and physical setup of a transient grating experiment is detailed. The procedure for extracting the thermal diffusivity from the raw experimental signal is improved upon by removing arbitrary user choice in the fitting parameters used and constructing a parameterless error minimizing procedure. The thermal conductivity of ultra-thin argon films modeled with the Lennard-Jones potential is calculated from both the Monte Carlo free path sampling technique and from explicit reduced dimensionality lattice dynamics calculations. In these ultra-thin films, the phonon properties are altered in more than a perturbative manner, referred to as the confinement regime. The free path sampling technique, which is a perturbative method, is compared to a reduced dimensionality lattice dynamics calculation where the entire film thickness is taken as the unit cell. Divergence in thermal conductivity magnitude and trend is found at few unit cell thick argon films. Although the phonon group velocities and lifetimes are affected, it is found that alterations to the phonon density of states are the primary cause of the deviation in thermal conductivity in the confinement regime.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode.

PubMed

Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, Christian

2018-02-27

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

Synergistic plasmonic and photonic crystal light-trapping: architectures for optical up-conversion in thin-film solar cells.

PubMed

Le, Khai Q; John, Sajeev

2014-01-13

We demonstrate, numerically, that with a 60 nanometer layer of optical up-conversion material, embedded with plasmonic core-shell nano-rings and placed below a sub-micron silicon conical-pore photonic crystal it is possible to absorb sunlight well above the Lambertian limit in the 300-1100 nm range. With as little as 500 nm, equivalent bulk thickness of silicon, the maximum achievable photo-current density (MAPD) is about 36 mA/cm2, using above-bandgap sunlight. This MAPD increases to about 38 mA/cm2 for one micron of silicon. Our architecture also provides solar intensity enhancement by a factor of at least 1400 at the sub-bandgap wavelength of 1500 nm, due to plasmonic and photonic crystal resonances, enabling a further boost of photo-current density from up-conversion of sub-bandgap sunlight. With an external solar concentrator, providing 100 suns, light intensities sufficient for significant nonlinear up-conversion can be realized. Two-photon absorption of sub-bandgap sunlight is further enhanced by the large electromagnetic density of states in the photonic crystal at the re-emission wavelength near 750 nm. It is suggested that this synergy of plasmonic and photonic crystal resonances can lead to unprecedented power conversion efficiency in ultra-thin-film silicon solar cells.

BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology

NASA Astrophysics Data System (ADS)

Galy, Philippe; Athanasiou, S.; Cristoloveanu, S.

2016-01-01

We evaluate the Electro-Static Discharge (ESD) protection capability of BIpolar MOS (BIMOS) transistors integrated in ultrathin silicon film for 28 nm Fully Depleted SOI (FD-SOI) Ultra Thin Body and BOX (UTBB) high-k metal gate technology. Using as a reference our measurements in hybrid bulk-SOI structures, we extend the BIMOS design towards the ultrathin silicon film. Detailed study and pragmatic evaluations are done based on 3D TCAD simulation with standard physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope AVS method). These preliminary 3D TACD results are very encouraging in terms of ESD protection efficiency in advanced FD-SOI CMOS.

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

PubMed Central

Nazirzadeh, Mohammad Amin; Atar, Fatih Bilge; Turgut, Berk Berkan; Okyay, Ali Kemal

2014-01-01

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications. PMID:25407509

The structure, stability, and electronic properties of ultra-thin BC2N nanotubes: a first-principles study.

PubMed

Wang, Yue; Zhang, Juan; Huang, Gang; Yao, Xinhua; Shao, Qingyi

2014-12-01

Rapid developments of the silicon electronics industry have close to the physical limits and nanotube materials are the ideal materials to replace silicon for the preparation of next generation electronic devices. Boron-carbon-nitrogen nanotubes (BCNNT) can be formed by joining carbon nanotube (CNT) and boron nitride nanotube (BNNT) segments, and BC2N nanotubes have been widely and deeply studied. Here, we employed first-principles calculations based on density function theory (DFT) to study the structure, stability, and electronic properties of ultra thin (4 Å diameter) BC2N nanotubes. Our results showed that the cross sections of BC2N nanotubes can transform from round to oval when CNT and BNNT segments are parallel to the tube axis. It results when the curvature of BNNT segments become larger than CNT segments. Further, we found the stability of BC2N nanotubes is sensitive to the number of B-N bonds, and the phase segregation of BNNT and CNT segments is energetically favored. We also obtained that all (3,3) BC2N nanotubes are semiconductor, whereas (5,0) BC2N nanotubes are conductor when CNT and BNNT segments are perpendicular to the tube axis; and semiconductor when CNT and BNNT segments are parallel to the tube axis. These electronic properties are abnormal when compared to the relative big ones.

Ultra-Sensitive Magnetoresistive Displacement Sensing Device

NASA Technical Reports Server (NTRS)

Olivas, John D. (Inventor); Lairson, Bruce M. (Inventor); Ramesham, Rajeshuni (Inventor)

2003-01-01

An ultrasensitive displacement sensing device for use in accelerometers, pressure gauges, temperature transducers, and the like, comprises a sputter deposited, multilayer, magnetoresistive field sensor with a variable electrical resistance based on an imposed magnetic field. The device detects displacement by sensing changes in the local magnetic field about the magnetoresistive field sensor caused by the displacement of a hard magnetic film on a movable microstructure. The microstructure, which may be a cantilever, membrane, bridge, or other microelement, moves under the influence of an acceleration a known displacement predicted by the configuration and materials selected, and the resulting change in the electrical resistance of the MR sensor can be used to calculate the displacement. Using a micromachining approach, very thin silicon and silicon nitride membranes are fabricated in one preferred embodiment by means of anisotropic etching of silicon wafers. Other approaches include reactive ion etching of silicon on insulator (SOI), or Low Pressure Chemical Vapor Deposition of silicon nitride films over silicon substrates. The device is found to be improved with the use of giant magnetoresistive elements to detect changes in the local magnetic field.

Enhancement of emission efficiency of colloidal CdSe quantum dots on silicon substrate via an ultra-thin layer of aluminum oxide.

PubMed

Patty, K; Sadeghi, S M; Nejat, A; Mao, C-B

2014-04-18

We demonstrate that an ultra-thin layer of aluminum oxide can significantly enhance the emission efficiency of colloidal quantum dots on a Si substrate. For an ensemble of single quantum dots, our results show that this super brightening process can increase the fluorescence of CdSe quantum dots, forming well-resolved spectra, while in the absence of this layer the emission remains mostly at the noise level. We demonstrate that this process can be further enhanced with irradiation of the quantum dots, suggesting a significant photo-induced fluorescence enhancement via considerable suppression of non-radiative decay channels of the quantum dots. We study the impact of the Al oxide thickness on Si and interdot interactions, and discuss the results in terms of photo-induced catalytic properties of the Al oxide and the effects of such an oxide on the Coulomb blockade responsible for suppression of photo-ionization of the quantum dots.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

PubMed

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

PubMed Central

Penumatcha, Ashish V.; Salazar, Ramon B.; Appenzeller, Joerg

2015-01-01

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses. PMID:26563458

Selective laser melting of hypereutectic Al-Si40-powder using ultra-short laser pulses

NASA Astrophysics Data System (ADS)

Ullsperger, T.; Matthäus, G.; Kaden, L.; Engelhardt, H.; Rettenmayr, M.; Risse, S.; Tünnermann, A.; Nolte, S.

2017-12-01

We investigate the use of ultra-short laser pulses for the selective melting of Al-Si40-powder to fabricate complex light-weight structures with wall sizes below 100 μ {m} combined with higher tensile strength and lower thermal expansion coefficient in comparison to standard Al-Si alloys. During the cooling process using conventional techniques, large primary silicon particles are formed which impairs the mechanical and thermal properties. We demonstrate that these limitations can be overcome using ultra-short laser pulses enabling the rapid heating and cooling in a non-thermal equilibrium process. We analyze the morphology characteristics and micro-structures of single tracks and thin-walled structures depending on pulse energy, repetition rate and scanning velocity utilizing pulses with a duration of 500 {fs} at a wavelength of 1030 {nm}. The possibility to specifically change and optimize the microstructure is shown.

3D Integration for Wireless Multimedia

NASA Astrophysics Data System (ADS)

Kimmich, Georg

The convergence of mobile phone, internet, mapping, gaming and office automation tools with high quality video and still imaging capture capability is becoming a strong market trend for portable devices. High-density video encode and decode, 3D graphics for gaming, increased application-software complexity and ultra-high-bandwidth 4G modem technologies are driving the CPU performance and memory bandwidth requirements close to the PC segment. These portable multimedia devices are battery operated, which requires the deployment of new low-power-optimized silicon process technologies and ultra-low-power design techniques at system, architecture and device level. Mobile devices also need to comply with stringent silicon-area and package-volume constraints. As for all consumer devices, low production cost and fast time-to-volume production is key for success. This chapter shows how 3D architectures can bring a possible breakthrough to meet the conflicting power, performance and area constraints. Multiple 3D die-stacking partitioning strategies are described and analyzed on their potential to improve the overall system power, performance and cost for specific application scenarios. Requirements and maturity of the basic process-technology bricks including through-silicon via (TSV) and die-to-die attachment techniques are reviewed. Finally, we highlight new challenges which will arise with 3D stacking and an outlook on how they may be addressed: Higher power density will require thermal design considerations, new EDA tools will need to be developed to cope with the integration of heterogeneous technologies and to guarantee signal and power integrity across the die stack. The silicon/wafer test strategies have to be adapted to handle high-density IO arrays, ultra-thin wafers and provide built-in self-test of attached memories. New standards and business models have to be developed to allow cost-efficient assembly and testing of devices from different silicon and technology providers.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor

PubMed Central

Park, Jae Hyo; Jang, Gil Su; Kim, Hyung Yoon; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Joo, Seung Ki

2016-01-01

Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at −0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm2/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature. PMID:27098115

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

DOE PAGES

Cartiglia, N.; Staiano, A.; Sola, V.; ...

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

NASA Astrophysics Data System (ADS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

Cartiglia, N.; Staiano, A.; Sola, V.; Arcidiacono, R.; Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R.; Bellora, A.; Durando, S.; Mandurrino, M.; Minafra, N.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E.; Grabas, H.; Gruey, B.; Labitan, C. A.; Losakul, R.; Luce, Z.; McKinney-Martinez, F.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, E.; Wilder, M.; Woods, N.; Zatserklyaniy, A.; Pellegrini, G.; Hidalgo, S.; Carulla, M.; Flores, D.; Merlos, A.; Quirion, D.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Characterization of Free-Standing Nano-Membranes by Using Ellipsometry

NASA Astrophysics Data System (ADS)

Park, Sungmo; Lee, Changho; An, Ilsin; Kim, Min-Su; Park, Jin-Goo; Ahn, Jin-ho

2018-04-01

The thickness of the pellicle is only a few tens of microns in extreme ultraviolet lithography (EUVL). This is because the absorption loss by the pellicle is high. Thus, the thickness and contamination on the surface of the EUVL pellicle are important factors for controlling the transmission of EUV light. In this work, we fabricate ultra-thin silicon-nitride membranes for EUVL pellicles and use micro-spot spectroscopic ellipsometry and imaging ellipsometry for characterization. We successfully deduce not only the thickness but also the optical function of the membrane. However, we found that some precautions were required for accurate measurement of the free-standing thin membranes by using ellipsometry. Issues related to the vibration of the membrane and the sensitivity of the measurement are discussed.

Ultra-confined surface phonon polaritons in molecular layers of van der Waals dielectrics.

PubMed

Dubrovkin, Alexander M; Qiang, Bo; Krishnamoorthy, Harish N S; Zheludev, Nikolay I; Wang, Qi Jie

2018-05-02

Improvements in device density in photonic circuits can only be achieved with interconnects exploiting highly confined states of light. Recently this has brought interest to highly confined plasmon and phonon polaritons. While plasmonic structures have been extensively studied, the ultimate limits of phonon polariton squeezing, in particular enabling the confinement (the ratio between the excitation and polariton wavelengths) exceeding 10 2 , is yet to be explored. Here, exploiting unique structure of 2D materials, we report for the first time that atomically thin van der Waals dielectrics (e.g., transition-metal dichalcogenides) on silicon carbide substrate demonstrate experimentally record-breaking propagating phonon polaritons confinement resulting in 190-times squeezed surface waves. The strongly dispersive confinement can be potentially tuned to greater than 10 3 near the phonon resonance of the substrate, and it scales with number of van der Waals layers. We argue that our findings are a substantial step towards infrared ultra-compact phonon polaritonic circuits and resonators, and would stimulate further investigations on nanophotonics in non-plasmonic atomically thin interface platforms.

Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

NASA Astrophysics Data System (ADS)

Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; de Crescenzi, M.; El Khakani, M. A.; Boninelli, S.

2016-11-01

Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2-3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620-950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon.

Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact

NASA Technical Reports Server (NTRS)

Shi, D.T.; Lu, W. J.; Bryant, E.; Elshot, K.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

Fabrication of Low-Noise TES Arrays for the SAFARI Instrument on SPICA

NASA Astrophysics Data System (ADS)

Ridder, M. L.; Khosropanah, P.; Hijmering, R. A.; Suzuki, T.; Bruijn, M. P.; Hoevers, H. F. C.; Gao, J. R.; Zuiddam, M. R.

2016-07-01

Ultra-low-noise transition edge sensors (TES) with noise equivalent power lower than 2 × 10^{-19} W/Hz^{1/2 } have been fabricated by SRON, which meet the sensitivity requirements for the far-infrared SAFARI instrument on space infrared telescope for cosmology and astrophysics. Our TES detector is based on a titanium/gold (Ti/Au) thermistor on a silicon nitride (SiN) island. The island is thermally linked with SiN legs to a silicon support structure at the bath temperature. The SiN legs are very thin (250 nm), narrow (500 nm), and long (above 300 {\\upmu } m); these dimensions are needed in leg-isolated bolometers to achieve the required level of sensitivity. In this paper, we describe the latest fabrication process for our TES bolometers with improved sensitivity.

Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Greene, Brian Joseph

Thin film silicon on insulator fabrication is an increasingly important technology requirement for improving performance in future generation devices and circuits. One process for SOI fabrication that has recently been generating renewed interest is Lateral Solid Phase Epitaxy (LSPE) of silicon over oxide. This process involves annealing amorphous silicon that has been deposited on oxide patterned Si wafers. The (001) Si substrate forms the crystalline seed for epitaxial growth, permitting the generation of Si films that are both single crystal, and oriented to the substrate. This method is particularly attractive to fabrication that requires low temperature processing, because the Si films are deposited in the amorphous phase at temperatures near 525°C, and crystallized at temperatures near 570°C. It is also attractive for applications requiring three dimensional stacking of active silicon device layers, due to the relatively low temperatures involved. For sub-50 nm gate length MOSFET fabrication, an SOI thickness on the order of 10 nm will be required. One limitation of the LSPE process has been the need for thick films (0.5--2 mum) and/or heavy P doping (10 19--1020 cm-3) to increase the maximum achievable lateral growth distance, and therefore minimize the area on the substrate occupied by seed holes. This dissertation discusses the characterization and optimization of process conditions for large area LSPE silicon film growth, as well as efforts to adapt the traditional LSPE process to achieve ultra-thin SOI layers (Tsilicon ≤ 25 nm) while avoiding the use of heavy active doping layers. MOSFETs fabricated in these films that exhibit electron mobility comparable to the Universal Si MOS Mobility are described.

High Efficient Ultra-Thin Flat Optics Based on Dielectric Metasurfaces

NASA Astrophysics Data System (ADS)

Ozdemir, Aytekin

Metasurfaces which emerged as two-dimensional counterparts of metamaterials, facilitate the realization of arbitrary phase distributions using large arrays with subwavelength and ultra-thin features. Even if metasurfaces are ultra-thin, they still effectively manipulate the phase, amplitude, and polarization of light in transmission or reflection mode. In contrast, conventional optical components are bulky, and they lose their functionality at sub-wavelength scales, which requires conceptually new types of nanoscale optical devices. On the other hand, as the optical systems shrink in size day by day, conventional bulky optical components will have tighter alignment and fabrication tolerances. Since metasurfaces can be fabricated lithographically, alignment can be done during lithographic fabrication, thus eliminating the need for post-fabrication alignments. In this work, various types of metasurface applications are thoroughly investigated for robust wavefront engineering with enhanced characteristics in terms of broad bandwidth, high efficiency and active tunability, while beneficial for application. Plasmonic metasurfaces are not compatible with the CMOS process flow, and, additionally their high absorption and ohmic loss is problematic in transmission based applications. Dielectric metasurfaces, however, offer a strong magnetic response at optical frequencies, and thus they can offer great opportunities for interacting not only with the electric component of a light field, but also with its magnetic component. They show great potential to enable practical device functionalities at optical frequencies, which motivates us to explore them one step further on wavefront engineering and imaging sensor platforms. Therefore, we proposed an efficient ultra-thin flat metalens at near-infrared regime constituted by silicon nanodisks which can support both electric and magnetic dipolar Mie-type resonances. These two dipole resonances can be overlapped at the same frequency by varying the geometric parameters of silicon nanodisks. Having two resonance mechanisms at the same frequency allows us to achieve full (0-2?) phase shift on the transmitted beam. To enable the miniaturization of pixel size for achieving high-resolution, planar, compact-size focal plane arrays (FPAs), we also present and explore the metasurface lens array-based FPAs. The investigated dielectric metasurface lens arrays achieved high focusing efficiency with superior optical crosstalk performance. We see a magnificent application prospect for metasurfaces in enhancing the fill factor and reducing the pixel size of FPAs and CCD, CMOS imaging sensors as well. Moreover, it is of paramount importance to design metasurfaces possessing tunable properties. Thus, we also propose a tunable beam steering device by combining phase manipulating metasurfaces concept and liquid crystals. Tunability feature is implemented by nematic liquid crystals infiltrated into nano holes in SiO2. Using electrically tunable nematic liquid crystals, dynamic beam steering is achieved.

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

A graphene-based Fabry-Pérot spectrometer in mid-infrared region

PubMed Central

Wang, Xiaosai; Chen, Chen; Pan, Liang; Wang, Jicheng

2016-01-01

Mid-infrared spectroscopy is of great importance in many areas and its integration with thin-film technology can economically enrich the functionalities of many existing devices. In this paper we propose a graphene-based ultra-compact spectrometer (several micrometers in size) that is compatible with complementary metal-oxide-semiconductor (CMOS) processing. The proposed structure uses a monolayer graphene as a mid-infrared surface waveguide, whose optical response is spatially modulated using electric fields to form a Fabry-Pérot cavity. By varying the voltage acting on the cavity, we can control the transmitted wavelength of the spectrometer at room temperature. This design has potential applications in the graphene-silicon-based optoelectronic devices as it offers new possibilities for developing new ultra-compact spectrometers and low-cost hyperspectral imaging sensors in mid-infrared region. PMID:27573080

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Ultra-low fouling and high antibody loading zwitterionic hydrogel coatings for sensing and detection in complex media.

PubMed

Chou, Ying-Nien; Sun, Fang; Hung, Hsiang-Chieh; Jain, Priyesh; Sinclair, Andrew; Zhang, Peng; Bai, Tao; Chang, Yung; Wen, Ten-Chin; Yu, Qiuming; Jiang, Shaoyi

2016-08-01

For surface-based diagnostic devices to achieve reliable biomarker detection in complex media such as blood, preventing nonspecific protein adsorption and incorporating high loading of biorecognition elements are paramount. In this work, a novel method to produce nonfouling zwitterionic hydrogel coatings was developed to achieve these goals. Poly(carboxybetaine acrylamide) (pCBAA) hydrogel thin films (CBHTFs) prepared with a carboxybetaine diacrylamide crosslinker (CBAAX) were coated on gold and silicon dioxide surfaces via a simple spin coating process. The thickness of CBHTFs could be precisely controlled between 15 and 150nm by varying the crosslinker concentration, and the films demonstrated excellent long-term stability. Protein adsorption from undiluted human blood serum onto the CBHTFs was measured with surface plasmon resonance (SPR). Hydrogel thin films greater than 20nm exhibited ultra-low fouling (<5ng/cm(2)). In addition, the CBHTFs were capable of high antibody functionalization for specific biomarker detection without compromising their nonfouling performance. This strategy provides a facile method to modify SPR biosensor chips with an advanced nonfouling material, and can be potentially expanded to a variety of implantable medical devices and diagnostic biosensors. In this work, we developed an approach to realize ultra-low fouling and high ligand loading with a highly-crosslinked, purely zwitterionic, carboxybetaine thin film hydrogel (CBHTF) coating platform. The CBHTF on a hydrophilic surface demonstrated long-term stability. By varying the crosslinker content in the spin-coated hydrogel solution, the thickness of CBHTFs could be precisely controlled. Optimized CBHTFs exhibited ultra-low nonspecific protein adsorption below 5ng/cm(2) measured by a surface plasmon resonance (SPR) sensor, and their 3D architecture allowed antibody loading to reach 693ng/cm(2). This strategy provides a facile method to modify SPR biosensor chips with an advanced nonfouling material, and can be potentially expanded to a variety of implantable medical devices and diagnostic biosensors. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

PubMed Central

Agati, M.; Amiard, G.; Le Borgne, V.; Castrucci, P.; Dolbec, R.; De Crescenzi, M.; El Khakani, M. A.; Boninelli, S.

2016-01-01

Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2–3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620–950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon. PMID:27874057

Solution-processed photodetectors from colloidal silicon nano/micro particle composite.

PubMed

Tu, Chang-Ching; Tang, Liang; Huang, Jiangdong; Voutsas, Apostolos; Lin, Lih Y

2010-10-11

We demonstrate solution-processed photodetectors composed of heavy-metal-free Si nano/micro particle composite. The colloidal Si particles are synthesized by electrochemical etching of Si wafers, followed by ultra-sonication to pulverize the porous surface. With alkyl ligand surface passivation through hydrosilylation reaction, the particles can form a stable colloidal suspension which exhibits bright photoluminescence under ultraviolet excitation and a broadband extinction spectrum due to enhanced scattering from the micro-size particles. The efficiency of the thin film photodetectors has been substantially improved by preventing oxidation of the particles during the etching process.

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Dinh, Toan; Kozeki, Takahiro; Nguyen, Tuan-Khoa; Qamar, Afzaal; Namazu, Takahiro; Nguyen, Nam-Trung; Dao, Dzung Viet

2016-09-01

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.

Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications

NASA Astrophysics Data System (ADS)

Delachat, F.; Le Drogoff, B.; Constancias, C.; Delprat, S.; Gautier, E.; Chaker, M.; Margot, J.

2016-01-01

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

Advanced germanium layer transfer for ultra thin body on insulator structure

NASA Astrophysics Data System (ADS)

Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

2016-12-01

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon.

PubMed

Wu, Ko-Li; Chou, Yi; Su, Chang-Chou; Yang, Chih-Chaing; Lee, Wei-I; Chou, Yi-Chia

2017-12-20

We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

A three-dimensional architecture of vertically aligned multilayer graphene facilitates heat dissipation across joint solid surfaces

NASA Astrophysics Data System (ADS)

Liang, Qizhen; Yao, Xuxia; Wang, Wei; Wong, C. P.

2012-02-01

Low operation temperature and efficient heat dissipation are important for device life and speed in current electronic and photonic technologies. Being ultra-high thermally conductive, graphene is a promising material candidate for heat dissipation improvement in devices. In the application, graphene is expected to be vertically stacked between contact solid surfaces in order to facilitate efficient heat dissipation and reduced interfacial thermal resistance across contact solid surfaces. However, as an ultra-thin membrane-like material, graphene is susceptible to Van der Waals forces and usually tends to be recumbent on substrates. Thereby, direct growth of vertically aligned free-standing graphene on solid substrates in large scale is difficult and rarely available in current studies, bringing significant barriers in graphene's application as thermal conductive media between joint solid surfaces. In this work, a three-dimensional vertically aligned multi-layer graphene architecture is constructed between contacted Silicon/Silicon surfaces with pure Indium as a metallic medium. Significantly higher equivalent thermal conductivity and lower contact thermal resistance of vertically aligned multilayer graphene are obtained, compared with those of their recumbent counterpart. This finding provides knowledge of vertically aligned graphene architectures, which may not only facilitate current demanding thermal management but also promote graphene's widespread applications such as electrodes for energy storage devices, polymeric anisotropic conductive adhesives, etc.

Ultra-Thin Solid-State Nanopores: Fabrication and Applications

NASA Astrophysics Data System (ADS)

Kuan, Aaron Tzeyang

Solid-state nanopores are a nanofluidic platform with unique advantages for single-molecule analysis and filtration applications. However, significant improvements in device performance and scalable fabrication methods are needed to make nanopore devices competitive with existing technologies. This dissertation investigates the potential advantages of ultra-thin nanopores in which the thickness of the membrane is significantly smaller than the nanopore diameter. Novel, scalable fabrication methods were first developed and then utilized to examine device performance for water filtration and single molecule sensing applications. Fabrication of nanometer-thin pores in silicon nitride membranes was achieved using a feedback-controlled ion beam method in which ion sputtering is arrested upon detection of the first few ions that drill through the membrane. Performing fabrication at liquid nitrogen temperatures prevents surface atom rearrangements that have previously complicated similar processes. A novel cross-sectional imaging method was also developed to allow careful examination of the full nanopore geometry. Atomically-thin graphene nanopores were fabricated via an electrical pulse method in which sub-microsecond electrical pulses applied across a graphene membrane in electrolyte solution are used to create a defect in the membrane and controllably enlarge it into a nanopore. This method dramatically increases the accuracy and reliability of graphene nanopore production, allowing consistent production of single nanopores down to subnanometer sizes. In filtration applications in which nanopores are used to selectively restrict the passage of dissolved contaminants, ultra-thin nanopores minimize the flow resistance, increasing throughput and energy-efficiency. The ability of graphene nanopores to separate different ions was characterized via ionic conductance and reversal potential measurements. Graphene nanopores were observed to conduct cations preferentially over anions with selectivity ratios of 100 or higher for pores as large as 20 nm in diameter, suggesting that porous graphene membranes can be used to create highly effective cation exchange membranes for electrodialysis filtration. These surprisingly high selectivities cannot be explained by current models of ionic conduction in graphene nanopores, motivating the development of a new model in which elevated concentrations of mobile cations near the graphene surface generate additional ion selectivity.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

PubMed

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

NASA Astrophysics Data System (ADS)

Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

2016-12-01

A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

NASA Astrophysics Data System (ADS)

Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

2017-12-01

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Ibrahim, Shaimaa Moustafa; Amin, Mohamed

2017-07-01

A novel silicon-based optical microcavity composed of a defect layer sandwiched between two parallel rugate mirrors is created by the electrochemical anodization of silicon in a hydrofluoric acid-based electrolyte using a precisely controlled current density profile. The profile consists of two sinusoidally modulated current waveforms separated by a fixed current that is applied to produce a defect layer between the mirrors. The spectral response of the rugate-based microcavity is simulated using the transfer matrix method and compared to the conventional Bragg-based microcavity. It is found that the resonance position of both microcavities is unchanged. However, the rugate-based microcavity exhibits a distinct reduction of the sidebands' intensity. Further attenuation of the sidebands' intensity is obtained by creating refractive index matching layers with optimized thickness at the bottom and top of the rugate-based microcavity. In order to stabilize the produced microcavity against natural oxidation, atomic layer deposition of an ultra-thin titanium dioxide layer on the pore wall is carried out followed by thermal annealing. The microcavity resonance position shows an observable sensitivity to the deposition and annealing processes.

Characterization and metrology implications of the 1997 NTRS

NASA Astrophysics Data System (ADS)

Class, W.; Wortman, J. J.

1998-11-01

In the Front-end (transistor forming) area of silicon CMOS device processing, several NTRS difficult challenges have been identified including; scaled and alternate gate dielectric materials, new DRAM dielectric materials, alternate gate materials, elevated contact structures, engineered channels, and large-area cost-effective silicon substrates. This paper deals with some of the characterization and metrology challenges facing the industry if it is to meet the projected needs identified in the NTRS. In the areas of gate and DRAM dielectric, scaling requires that existing material layers be thinned to maximize capacitance. For the current gate dielectric, SiO2 and its nitrided derivatives, direct tunneling will limit scaling to approximately 1.5nm for logic applications before power losses become unacceptable. Low power logic and memory applications may limit scaling to the 2.0-2.2nm range. Beyond these limits, dielectric materials having higher dielectric constant, will permit continued capacitance increases while allowing for the use of thicker dielectric layers, where tunneling may be minimized. In the near term silicon nitride is a promising SiO2 substitute material while in the longer term "high-k" materials such as tantalum pentoxide and barium strontium titanate (BST) will be required. For these latter materials, it is likely that a multilayer dielectric stack will be needed, consisting of an ultra-thin (1-2 atom layer) interfacial SiO2 layer and a high-k overlayer. Silicon wafer surface preparation control, as well as the control of composition, crystal structure, and thickness for such stacks pose significant characterization and metrology challenges. In addition to the need for new gate dielectric materials, new gate materials will be required to overcome the limitations of the current doped polysilicon gate materials. Such a change has broad ramifications on device electrical performance and manufacturing process robustness which again implies a broad range of new characterization and metrology requirements. Finally, the doped structure of the MOS transistor must scale to very small lateral and depth dimensions, and thermal budgets must be reduced to permit the retention of very abrupt highly doped drain and channel engineered structures. Eventually, the NTRS forecasts the need for an elevated contact structure. Here, there are significant challenges associated with three-dimensional dopant profiling, measurement of dopant activity in ultra-shallow device regions, as well as point defect metrology and characterization.

Characterization of a thinned back illuminated MIMOSA V sensor as a visible light camera

NASA Astrophysics Data System (ADS)

Bulgheroni, Antonio; Bianda, Michele; Caccia, Massimo; Cappellini, Chiara; Mozzanica, Aldo; Ramelli, Renzo; Risigo, Fabio

2006-09-01

This paper reports the measurements that have been performed both in the Silicon Detector Laboratory at the University of Insubria (Como, Italy) and at the Instituto Ricerche SOlari Locarno (IRSOL) to characterize a CMOS pixel particle detector as a visible light camera. The CMOS sensor has been studied in terms of Quantum Efficiency in the visible spectrum, image blooming and reset inefficiency in saturation condition. The main goal of these measurements is to prove that this kind of particle detector can also be used as an ultra fast, 100% fill factor visible light camera in solar physics experiments.

Coated Porous Si for High Performance On-Chip Supercapacitors

NASA Astrophysics Data System (ADS)

Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

2014-11-01

High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dib, E., E-mail: elias.dib@for.unipi.it; Carrillo-Nuñez, H.; Cavassilas, N.

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas hole-phonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations.

Responsivity boosting in FIR TiN LEKIDs using phonon recycling: simulations and array design

NASA Astrophysics Data System (ADS)

Fyhrie, Adalyn; McKenney, Christopher; Glenn, Jason; LeDuc, Henry G.; Gao, Jiansong; Day, Peter; Zmuidzinas, Jonas

2016-07-01

To characterize further the cosmic star formation history at high redshifts, a large-area survey by a cryogenic 4-6 meter class telescope with a focal plane populated by tens of thousands of far-infrared (FIR, 30-300 μm) detectors with broadband detector noise equivalent powers (NEPs) on the order of 3×10-9 W/√ Hz is needed. Ideal detectors for such a surveyor do not yet exist. As a demonstration of one technique for approaching the ultra-low NEPs required by this surveyor, we present the design of an array of 96 350 µm KIDs that utilize phonon recycling to boost responsivity. Our KID array is fabricated with TiN deposited on a silicon-on-insulator (SOI) wafer, which is a 2 μm thick layer of silicon bonded to a thicker slab of silicon by a thin oxide layer. The backside thick slab is etched away underneath the absorbers so that the inductors are suspended on just the 2 μm membrane. The intent is that quasiparticle recombination phonons are trapped in the thin membrane, thereby increasing their likelihood of being re-absorbed by the KID to break additional Cooper pairs and boost responsivity. We also present a Monte-Carlo simulation that predicts the amount of signal boost expected from phonon recycling given different detector geometries and illumination strategies. For our current array geometry, the simulation predicts a measurable 50% boost in responsivity.

Analysis of Soft Error Rates in 65- and 28-nm FD-SOI Processes Depending on BOX Region Thickness and Body Bias by Monte-Carlo Based Simulations

NASA Astrophysics Data System (ADS)

Zhang, Kuiyuan; Umehara, Shigehiro; Yamaguchi, Junki; Furuta, Jun; Kobayashi, Kazutoshi

2016-08-01

This paper analyzes how body bias and BOX region thickness affect soft error rates in 65-nm SOTB (Silicon on Thin BOX) and 28-nm UTBB (Ultra Thin Body and BOX) FD-SOI processes. Soft errors are induced by alpha-particle and neutron irradiation and the results are then analyzed by Monte Carlo based simulation using PHITS-TCAD. The alpha-particle-induced single event upset (SEU) cross-section and neutron-induced soft error rate (SER) obtained by simulation are consistent with measurement results. We clarify that SERs decreased in response to an increase in the BOX thickness for SOTB while SERs in UTBB are independent of BOX thickness. We also discover SOTB develops a higher tolerance to soft errors when reverse body bias is applied while UTBB become more susceptible.

Ultra-large nonlinear parameter in graphene-silicon waveguide structures.

PubMed

Donnelly, Christine; Tan, Dawn T H

2014-09-22

Mono-layer graphene integrated with optical waveguides is studied for the purpose of maximizing E-field interaction with the graphene layer, for the generation of ultra-large nonlinear parameters. It is shown that the common approach used to minimize the waveguide effective modal area does not accurately predict the configuration with the maximum nonlinear parameter. Both photonic and plasmonic waveguide configurations and graphene integration techniques realizable with today's fabrication tools are studied. Importantly, nonlinear parameters exceeding 10(4) W(-1)/m, two orders of magnitude larger than that in silicon on insulator waveguides without graphene, are obtained for the quasi-TE mode in silicon waveguides incorporating mono-layer graphene in the evanescent part of the optical field. Dielectric loaded surface plasmon polariton waveguides incorporating mono-layer graphene are observed to generate nonlinear parameters as large as 10(5) W(-1)/m, three orders of magnitude larger than that in silicon on insulator waveguides without graphene. The ultra-large nonlinear parameters make such waveguides promising platforms for nonlinear integrated optics at ultra-low powers, and for previously unobserved nonlinear optical effects to be studied in a waveguide platform.

Rapid Biochemical Mixture Screening by Three-Dimensional Patterned Multifunctional Substrate with Ultra-Thin Layer Chromatography (UTLC) and Surface Enhanced Raman Scattering (SERS).

PubMed

Lee, Bi-Shen; Lin, Pi-Chen; Lin, Ding-Zheng; Yen, Ta-Jen

2018-01-11

We present a three-dimensional patterned (3DP) multifunctional substrate with the functions of ultra-thin layer chromatography (UTLC) and surface enhanced Raman scattering (SERS), which simultaneously enables mixture separation, target localization and label-free detection. This multifunctional substrate is comprised of a 3DP silicon nanowires array (3DP-SiNWA), decorated with silver nano-dendrites (AgNDs) atop. The 3DP-SiNWA is fabricated by a facile photolithographic process and low-cost metal assisted chemical etching (MaCE) process. Then, the AgNDs are decorated onto 3DP-SiNWA by a wet chemical reduction process, obtaining 3DP-AgNDs@SiNWA multifunctional substrates. With various patterns designed on the substrates, the signal intensity could be maximized by the excellent confinement and concentrated effects of patterns. By using this 3DP-AgNDs@SiNWA substrate to scrutinize the mixture of two visible dyes, the individual target could be recognized and further boosted the Raman signal of target 15.42 times comparing to the un-patterned AgNDs@SiNWA substrate. Therefore, such a three-dimensional patterned multifunctional substrate empowers rapid mixture screening, and can be readily employed in practical applications for biochemical assays, food safety and other fields.

A fully functionalized metamaterial perfect absorber with simple design and implementation.

PubMed

Fu, Sze Ming; Zhong, Yan Kai; Tu, Ming Hsiang; Chen, Bo Ruei; Lin, Albert

2016-10-26

Broadband perfect metamaterial absorbers have been drawing significant attention in recent years. A close-to-unity absorption over a broad spectral range is established and this facilitates many photonic applications. A more challenging goal is to construct a broadband absorber with a tailored spectral absorption. The spectral absorption control and spectral shaping are very critical in many applications, such as thermal-photovoltaic, thermal emitters, spectrum imaging system, biomedical and extraterrestrial sensing, and refractive index sensor. In this work, one-dimensional (1D) planar stacking structure is designed to achieve the ultimate goal of a functionalized absorber with a fully tailorable spectral absorption. The lithography and etching process are totally eliminated in this proposed structure, and the fabrication is fully compatible with the regular silicon IC processing. By using ~2 nm ultra-thin metallic layers with a 10-pair (10X) SiO 2 /Si 3 N 4 integrated dielectric filter, we can achieve decent spectral response shaping. The planar configuration of the ultra-thin-metal metamaterial perfect absorber (MPA) is the key to the easy design/integration of the dielectric filters on top of the MPA. Specifically, band-rejected, high-pass, low-pass and band-pass structure are constructed successfully. Finally, experimental evidence to support our simulation result is also provided, which proves the feasibility of our proposal.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

PubMed

Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

2017-11-15

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Influence of preparation design and ceramic thicknesses on fracture resistance and failure modes of premolar partial coverage restorations

PubMed Central

Guess, Petra C.; Schultheis, Stefan; Wolkewitz, Martin; Zhang; Strub, Joerg R.

2015-01-01

Statement of problem Preparation designs and ceramic thicknesses are key factors for the long-term success of minimally invasive premolar partial coverage restorations. However, only limited information is presently available on this topic. Purpose The aim of this in vitro study was to evaluate the fracture resistance and failure modes of ceramic premolar partial coverage restorations with different preparation designs and ceramic thicknesses. Material and methods Caries-free human premolars (n= 144) were divided into 9 groups. Palatal onlay preparation comprised reduction of the palatal cusp by 2 mm (Palatal-Onlay-Standard), 1 mm (Palatal-Onlay-Thin), or 0.5 mm (Palatal-Onlay-Ultra-Thin). Complete-coverage onlay preparation additionally included the buccal cusp (Occlusal-Onlay-Standard; Occlusal-Onlay-Thin; Occlusal-Onlay-Ultra-Thin). Labial surface preparations with chamfer reductions of 0.8 mm (Complete-Veneer-Standard), 0.6 mm (Complete-Veneer-Thin) and 0.4 mm (Complete-Veneer-Ultra-Thin) were implemented for complete veneer restorations. Restorations were fabricated from a pressable lithium-disilicate ceramic (IPS-e.max-Press) and cemented adhesively (Syntac-Classic/Variolink-II). All specimens were subjected to cyclic mechanical loading (F= 49 N, 1.2 million cycles) and simultaneous thermocycling (5°C to 55°C) in a mouth-motion simulator. After fatigue, restorations were exposed to single-load-to-failure. Two-way ANOVA was used to identify statistical differences. Pair-wise differences were calculated and P-values were adjusted by the Tukey–Kramer method (α= .05). Results All specimens survived fatigue. Mean (SD) load to failure values (N) were as follows: 837 (320/Palatal-Onlay-Standard), 1055 (369/Palatal-Onlay-Thin), 1192 (342/Palatal-Onlay-Ultra-Thin), 963 (405/Occlusal-Onlay-Standard), 1108 (340/Occlusal-Onlay-Thin), 997 (331/Occlusal-Onlay-Ultra-Thin), 1361 (333/Complete-Veneer-Standard), 1087 (251/Complete-Veneer-Thin), 883 (311/Complete-Veneer-Ultra-Thin). Palatal-onlay restorations revealed a significantly higher fracture resistance with ultra-thin thicknesses than with standard thicknesses (P=.015). Onlay restorations were not affected by thickness variations. Fracture loads of standard complete veneers were significantly higher than thin (P=.03) and ultra-thin (P<.001) restorations. Conclusions In this in vitro study, the reduction of preparation depth to 1.00 and 0.5 mm did not impair fracture resistance of pressable lithium-disilicate ceramic onlay restorations but resulted in lower failure loads in complete veneer restorations on premolars. PMID:24079561

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Thinking Small – Progress on Microscale Neurostimulation Technology

PubMed Central

Pancrazio, Joseph J.; Deku, Felix; Ghazavi, Atefeh; Stiller, Allison M.; Rihani, Rashed; Frewin, Christopher L.; Varner, Victor D.; Gardner, Timothy J.; Cogan, Stuart F.

2017-01-01

Objectives Neural stimulation is well-accepted as an effective therapy for a wide range of neurological disorders. While the scale of clinical devices is relatively large, translational and pilot clinical applications are underway for microelectrode-based systems. Microelectrodes have the advantage of stimulating a relatively small tissue volume which may improve selectivity of therapeutic stimuli. Current microelectrode technology is associated with chronic tissue response which limits utility of these devices for neural recording and stimulation. One approach for addressing the tissue response problem may be to reduce physical dimensions of the device. “Thinking small” is a trend for the electronics industry, and for implantable neural interfaces, the result may be a device that can evade the foreign body response. Materials and Methods This review paper surveys our current understanding pertaining to the relationship between implant size and tissue response and the state-of-the-art in ultra-small microelectrodes. A comprehensive literature search was performed using PubMed, Web of Science (Clarivate Analytics), and Google Scholar. Results The literature review shows recent efforts to create microelectrodes that are extremely thin appear to reduce or even eliminate the chronic tissue response. With high charge capacity coatings, ultra-microelectrodes fabricated from emerging polymers and amorphous silicon carbide appear promising for neurostimulation applications. Conclusion We envision the emergence of robust and manufacturable ultra-microelectrodes that leverage advanced materials where the small cross-sectional geometry enables compliance within tissue. Nevertheless, future testing under in vivo conditions is particularly important for assessing the stability of thin film devices under chronic stimulation. PMID:29076214

Ultra-thin whitetopping for general aviation airports in New Mexico.

DOT National Transportation Integrated Search

2002-06-01

Whitetopping is a pavement rehabilitation construction practice where portland cement concrete (PCC) is placed over an existing asphalt concrete pavement as an overlay. Ultra-thin whitetopping (UTW) is generally a thin overlay with a thickness betwee...

Effects of different wetting layers on the growth of smooth ultra-thin silver thin films

NASA Astrophysics Data System (ADS)

Ni, Chuan; Shah, Piyush; Sarangan, Andrew M.

2014-09-01

Ultrathin silver films (thickness below 10 nm) are of great interest as optical coatings on windows and plasmonic devices. However, producing these films has been a continuing challenge because of their tendency to form clusters or islands rather than smooth contiguous thin films. In this work we have studied the effect of Cu, Ge and ZnS as wetting layers (1.0 nm) to achieve ultrasmooth thin silver films. The silver films (5 nm) were grown by RF sputter deposition on silicon and glass substrates using a few monolayers of the different wetting materials. SEM imaging was used to characterize the surface properties such as island formation and roughness. Also the optical properties were measured to identify the optical impact of the different wetting layers. Finally, a multi-layer silver based structure is designed and fabricated, and its performance is evaluated. The comparison between the samples with different wetting layers show that the designs with wetting layers which have similar optical properties to silver produce the best overall performance. In the absence of a wetting layer, the measured optical spectra show a significant departure from the model predictions, which we attribute primarily to the formation of clusters.

Thin Fresnel zone plate lenses for focusing underwater sound

NASA Astrophysics Data System (ADS)

Calvo, David C.; Thangawng, Abel L.; Nicholas, Michael; Layman, Christopher N.

2015-07-01

A Fresnel zone plate (FZP) lens of the Soret type creates a focus by constructive interference of waves diffracted through open annular zones in an opaque screen. For underwater sound below MHz frequencies, a large FZP that blocks sound using high-impedance, dense materials would have practical disadvantages. We experimentally and numerically investigate an alternative approach of creating a FZP with thin (0.4λ) acoustically opaque zones made of soft silicone rubber foam attached to a thin (0.1λ) transparent rubber substrate. An ultra-thin (0.0068λ) FZP that achieves higher gain is also proposed and simulated which uses low-volume fraction, bubble-like resonant air ring cavities to construct opaque zones. Laboratory measurements at 200 kHz indicate that the rubber foam can be accurately modeled as a lossy fluid with an acoustic impedance approximately 1/10 that of water. Measured focal gains up to 20 dB agree with theoretical predictions for normal and oblique incidence. The measured focal radius of 0.68λ (peak-to-null) agrees with the Rayleigh diffraction limit prediction of 0.61 λ/NA (NA = 0.88) for a low-aberration lens.

Thin Fresnel zone plate lenses for focusing underwater sound

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calvo, David C., E-mail: david.calvo@nrl.navy.mil; Thangawng, Abel L.; Nicholas, Michael

A Fresnel zone plate (FZP) lens of the Soret type creates a focus by constructive interference of waves diffracted through open annular zones in an opaque screen. For underwater sound below MHz frequencies, a large FZP that blocks sound using high-impedance, dense materials would have practical disadvantages. We experimentally and numerically investigate an alternative approach of creating a FZP with thin (0.4λ) acoustically opaque zones made of soft silicone rubber foam attached to a thin (0.1λ) transparent rubber substrate. An ultra-thin (0.0068λ) FZP that achieves higher gain is also proposed and simulated which uses low-volume fraction, bubble-like resonant air ringmore » cavities to construct opaque zones. Laboratory measurements at 200 kHz indicate that the rubber foam can be accurately modeled as a lossy fluid with an acoustic impedance approximately 1/10 that of water. Measured focal gains up to 20 dB agree with theoretical predictions for normal and oblique incidence. The measured focal radius of 0.68λ (peak-to-null) agrees with the Rayleigh diffraction limit prediction of 0.61 λ/NA (NA = 0.88) for a low-aberration lens.« less

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Investigations of Si Thin Films as Anode of Lithium-Ion Batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Qingliu; Shi, Bing; Bareño, Javier

Amorphous silicon thin films having various thicknesses were investigated as a negative electrode material for lithium-ion batteries. Electrochemical characterization of the 20 nm thick thin silicon film revealed a very low first cycle Coulombic efficiency, which can be attributed to the silicon oxide layer formed on both the surface of the as-deposited Si thin film and the interface between the Si and the substrate. Among the investigated films, the 100 nm Si thin film demonstrated the best performance in terms of first cycle efficiency and cycle life. Observations from scanning electron microscopy demonstrated that the generation of cracks was inevitablemore » in the cycled Si thin films, even as the thickness of the film was as little as 20 nm, which was not predicted by previous modeling work. However, the cycling performance of the 20 and 100 nm silicon thin films was not detrimentally affected by these cracks. The poor capacity retention of the 1 mu m silicon thin film was attributed to the delamination.« less

Fixed-target protein serial microcrystallography with an x-ray free electron laser

PubMed Central

Hunter, Mark S.; Segelke, Brent; Messerschmidt, Marc; Williams, Garth J.; Zatsepin, Nadia A.; Barty, Anton; Benner, W. Henry; Carlson, David B.; Coleman, Matthew; Graf, Alexander; Hau-Riege, Stefan P.; Pardini, Tommaso; Seibert, M. Marvin; Evans, James; Boutet, Sébastien; Frank, Matthias

2014-01-01

We present results from experiments at the Linac Coherent Light Source (LCLS) demonstrating that serial femtosecond crystallography (SFX) can be performed to high resolution (~2.5 Å) using protein microcrystals deposited on an ultra-thin silicon nitride membrane and embedded in a preservation medium at room temperature. Data can be acquired at a high acquisition rate using x-ray free electron laser sources to overcome radiation damage, while sample consumption is dramatically reduced compared to flowing jet methods. We achieved a peak data acquisition rate of 10 Hz with a hit rate of ~38%, indicating that a complete data set could be acquired in about one 12-hour LCLS shift using the setup described here, or in even less time using hardware optimized for fixed target SFX. This demonstration opens the door to ultra low sample consumption SFX using the technique of diffraction-before-destruction on proteins that exist in only small quantities and/or do not produce the copious quantities of microcrystals required for flowing jet methods. PMID:25113598

Ultra Low Outgassing silicone performance in a simulated space ionizing radiation environment

NASA Astrophysics Data System (ADS)

Velderrain, M.; Malave, V.; Taylor, E. W.

2010-09-01

The improvement of silicone-based materials used in space and aerospace environments has garnered much attention for several decades. Most recently, an Ultra Low Outgassing™ silicone incorporating innovative reinforcing and functional fillers has shown that silicone elastomers with unique and specific properties can be developed to meet applications requiring stringent outgassing requirements. This paper will report on the next crucial step in qualifying these materials for spacecraft applications requiring chemical and physical stability in the presence of ionizing radiation. As a first step in this process, selected materials were irradiated with Co-60 gamma-rays to simulate the total dose received in near- Earth orbits. The paper will present pre-and post-irradiation response data of Ultra Low Outgassing silicone samples exposed under ambient air environment coupled with measurements of collected volatile condensable material (CVCM) and total mass loss (TML) per the standard conditions in ASTM E 595. The data will show an insignificant effect on the CVCMs and TMLs after exposure to various dosages of gamma radiation. This data may favorably impact new applications for these silicone materials for use as an improved sealant for space solar cell systems, space structures, satellite systems and aerospace systems.

Ultra-fast pulse propagation in nonlinear graphene/silicon ridge waveguide

NASA Astrophysics Data System (ADS)

Liu, Ken; Zhang, Jian Fa; Xu, Wei; Zhu, Zhi Hong; Guo, Chu Cai; Li, Xiu Jian; Qin, Shi Qiao

2015-11-01

We report the femtosecond laser propagation in a hybrid graphene/silicon ridge waveguide with demonstration of the ultra-large Kerr coefficient of graphene. We also fabricated a slot-like graphene/silicon ridge waveguide which can enhance its effective Kerr coefficient 1.5 times compared with the graphene/silicon ridge waveguide. Both transverse-electric-like (TE-like) mode and transverse-magnetic-like (TM-like) mode are experimentally measured and numerically analyzed. The results show nonlinearity dependence on mode polarization not in graphene/silicon ridge waveguide but in slot-like graphene/silicon ridge waveguide. Great spectral broadening was observed due to self-phase modulation (SPM) after propagation in the hybrid waveguide with length of 2 mm. Power dependence property of the slot-like hybrid waveguide is also measured and numerically analyzed. The results also confirm the effective Kerr coefficient estimation of the hybrid structures. Spectral blue shift of the output pulse was observed in the slot-like graphene/silicon ridge waveguide. One possible explanation is that the blue shift was caused by the ultra-fast free carrier effect with the optical absorption of the doped graphene. This interesting effect can be used for soliton compression in femtosecond region. We also discussed the broadband anomalous dispersion of the Kerr coefficient of graphene.

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

DOE PAGES

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing; ...

2016-08-27

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Deposition of hydrogenated silicon clusters for efficient epitaxial growth.

PubMed

Le, Ha-Linh Thi; Jardali, Fatme; Vach, Holger

2018-06-13

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying growth mechanisms leading to the high-speed epitaxial growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the epitaxial growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the epitaxial growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the epitaxial growth of thin crystalline silicon films.

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mouro, J.; Gualdino, A.; Chu, V.

2013-11-14

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three differentmore » types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.« less

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Arvind, E-mail: anita@barc.gov.in; Topkar, Anita

In order to improve the gamma discrimination capability for thermal neutron measurements using silicon PIN detectors, a novel approach of use of thin epitaxial silicon PIN detectors was investigated. Thin epitaxial silicon detectors with thickness of 15 µm were developed and their performance was tested with thermal neutrons using {sup 10}B converter. The performance of this detector was compared with the performance of a 300 µm silicon detector. The results of experiments presented in this paper indicate that thin epitaxial silicon detectors can significantly improve γ discrimination for thermal neutron measurements.

Thermoelectric bolometers based on silicon membranes

NASA Astrophysics Data System (ADS)

Varpula, Aapo; Timofeev, Andrey V.; Shchepetov, Andrey; Grigoras, Kestutis; Ahopelto, Jouni; Prunnila, Mika

2017-05-01

State-of-the-art high performance IR sensing and imaging systems utilize highly expensive photodetector technology, which requires exotic and toxic materials and cooling. Cost-effective alternatives, uncooled bolometer detectors, are widely used in commercial long-wave IR (LWIR) systems. Compared to the cooled detectors they are much slower and have approximately an order of magnitude lower detectivity in the LWIR. We present uncooled bolometer technology which is foreseen to be capable of narrowing the gap between the cooled and uncooled technologies. The proposed technology is based on ultra-thin silicon membranes, the thermal conductivity and electrical properties of which can be controlled by membrane thickness and doping, respectively. The thermal signal is transduced into electric voltage using thermocouple consisting of highly-doped n and p type Si beams. Reducing the thickness of the Si membrane improves the performance (i.e. sensitivity and speed) as thermal conductivity and thermal mass of Si membrane decreases with decreasing thickness. Based on experimental data we estimate the performance of these uncooled thermoelectric bolometers.

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

NASA Astrophysics Data System (ADS)

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla; Kuball, Martin

2015-06-01

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

Ultra thin metallic coatings to control near field radiative heat transfer

NASA Astrophysics Data System (ADS)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

DTIC Science & Technology

2015-04-24

AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650...distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated

Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption.

PubMed

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

Ultra-wide band signal generation using a coupling-tunable silicon microring resonator.

PubMed

Ding, Yunhong; Huang, Bo; Peucheret, Christophe; Xu, Jing; Ou, Haiyan; Zhang, Xinliang; Huang, Dexiu

2014-03-10

Ultra-wide band signal generation using a silicon microring resonator tuned to an NRZ-DPSK modulated optical carrier is proposed and demonstrated. The scheme is shown to enable the generation of UWB signals with switchable polarity and tunable bandwidth by simply tuning the coupling regions of the microring resonator. Monocycle pulses with both negative and positive polarities are successfully synthesized experimentally.

Mechanisms of Superplastic Deformation of Nanocrystalline Silicon Carbide Ceramics

DTIC Science & Technology

2012-08-01

These included the following: standard hot isostatic pressing (HIP), spark plasma sintering , ultra-high pressure HIP, and a multianvil pressure...96.8 2270 Multianvil apparatus 1200 3000 94.8 1130 Note: SPS = spark plasma sintering . 2 Figure 1. Ultra-high pressure HIP; 1600 °C, 980...strain rate sensitivity and flow stress. 15. SUBJECT TERMS silicon carbide, nanostructure, sintering , hot isostatic pressing, hardness 16. SECURITY

Laser cutting of ultra-thin glasses based on a nonlinear laser interaction effect

NASA Astrophysics Data System (ADS)

Chen, Jian; Wu, Zhouling

2013-07-01

Glass panel substrates have been widely used in consumer electronics such as in flat panel TVs, laptops, and cell phones. With the advancement in the industry, the glass substrates are becoming thinner and stronger for reduced weight and volume, which brings great challenges for traditional mechanical processes in terms of cut quality, yield, and throughput. Laser glass cutting provides a non-contact process with minimum impact and superior quality compared to the mechanical counterparts. In this paper, we presented recent progresses in advanced laser processing of ultra-thin glass substrates, especially laser-cutting of ultra-thin glasses by a high power laser through a nonlinear interaction effect. Our results indicate that this technique has great potential of application for mass production of ultra-thin glass substrates.

Analysis of thin baked-on silicone layers by FTIR and 3D-Laser Scanning Microscopy.

PubMed

Funke, Stefanie; Matilainen, Julia; Nalenz, Heiko; Bechtold-Peters, Karoline; Mahler, Hanns-Christian; Friess, Wolfgang

2015-10-01

Pre-filled syringes (PFS) and auto-injection devices with cartridges are increasingly used for parenteral administration. To assure functionality, silicone oil is applied to the inner surface of the glass barrel. Silicone oil migration into the product can be minimized by applying a thin but sufficient layer of silicone oil emulsion followed by thermal bake-on versus spraying-on silicone oil. Silicone layers thicker than 100nm resulting from regular spray-on siliconization can be characterized using interferometric profilometers. However, the analysis of thin silicone layers generated by bake-on siliconization is more challenging. In this paper, we have evaluated Fourier transform infrared (FTIR) spectroscopy after solvent extraction and a new 3D-Laser Scanning Microscopy (3D-LSM) to overcome this challenge. A multi-step solvent extraction and subsequent FTIR spectroscopy enabled to quantify baked-on silicone levels as low as 21-325μg per 5mL cartridge. 3D-LSM was successfully established to visualize and measure baked-on silicone layers as thin as 10nm. 3D-LSM was additionally used to analyze the silicone oil distribution within cartridges at such low levels. Both methods provided new, highly valuable insights to characterize the siliconization after processing, in order to achieve functionality. Copyright © 2015 Elsevier B.V. All rights reserved.

High-Efficiency Thin-Film Silicon-on-GaP Solar Cell for Improved Radiation Resistance.

DTIC Science & Technology

1987-09-01

UNCLASSIFIED MyUM 21 LIX E / 82H M D 132 11111_Lt5l1. t FILE UPI" AD-A190 268 AFWAL-TR-87-2070 HIGH-EFFICIENCY THIN- FILM SILICON-ON-GaP SOLAR CELL...EFFICIENCY THIN- FILM SILICON-ON-GaP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE 12. PERSONAL AUTHOR(S) JEROME S. CULIK 13a. TYPE OF REPORT 13b. TIME...C tinue on reverse if necessary and identify by block number) 10 01 SILICONs THIN* FILM , . HETEROEPITAXIAL, RADIATION, 10 01 i GALLIUM PHOSPHIDE 19

A fully functionalized metamaterial perfect absorber with simple design and implementation

PubMed Central

Fu, Sze Ming; Zhong, Yan Kai; Tu, Ming Hsiang; Chen, Bo Ruei; Lin, Albert

2016-01-01

Broadband perfect metamaterial absorbers have been drawing significant attention in recent years. A close-to-unity absorption over a broad spectral range is established and this facilitates many photonic applications. A more challenging goal is to construct a broadband absorber with a tailored spectral absorption. The spectral absorption control and spectral shaping are very critical in many applications, such as thermal-photovoltaic, thermal emitters, spectrum imaging system, biomedical and extraterrestrial sensing, and refractive index sensor. In this work, one-dimensional (1D) planar stacking structure is designed to achieve the ultimate goal of a functionalized absorber with a fully tailorable spectral absorption. The lithography and etching process are totally eliminated in this proposed structure, and the fabrication is fully compatible with the regular silicon IC processing. By using ~2 nm ultra-thin metallic layers with a 10-pair (10X) SiO2/Si3N4 integrated dielectric filter, we can achieve decent spectral response shaping. The planar configuration of the ultra-thin-metal metamaterial perfect absorber (MPA) is the key to the easy design/integration of the dielectric filters on top of the MPA. Specifically, band-rejected, high-pass, low-pass and band-pass structure are constructed successfully. Finally, experimental evidence to support our simulation result is also provided, which proves the feasibility of our proposal. PMID:27782181

Ultra-thin MoS₂ coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

PubMed

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

2018-01-02

Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

PubMed Central

Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal

2011-01-01

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. PMID:22319353

Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy

NASA Technical Reports Server (NTRS)

2006-01-01

A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Nano-micro structured superhydrophobic zinc coating on steel for prevention of corrosion and ice adhesion.

PubMed

Brassard, J D; Sarkar, D K; Perron, J; Audibert-Hayet, A; Melot, D

2015-06-01

Thin films of zinc have been deposited on steel substrates by electrodeposition process and further functionalized with ultra-thin films of commercial silicone rubber, in order to obtain superhydrophobic properties. Morphological feature, by scanning electron microscope (SEM), shows that the electrodeposited zinc films are composed of micro-nano rough patterns. Furthermore, chemical compositions of these films have been analyzed by X-ray diffraction (XRD) and infra-red (IRRAS). An optimum electrodeposition condition, based on electrical potential and deposition time, has been obtained which provides superhydrophobic properties with a water contact angle of 155±1°. The corrosion resistance properties, in artificial seawater, of the superhydrophobic zinc coated steel are found to be superior to bare steel. Similarly, the measured ice adhesion strength on superhydrophobic surfaces, using the centrifugal adhesion test (CAT), is found to be 6.3 times lower as compared to bare steel. This coating has promising applications in offshore environment, to mitigate corrosion and reduce ice adhesion. Copyright © 2014 Elsevier Inc. All rights reserved.

Template-assisted electrodeposition of Ni and Ni/Au nanowires on planar and curved substrates

NASA Astrophysics Data System (ADS)

Guiliani, Jason; Cadena, John; Monton, Carlos

2018-02-01

We present a variant of the template-assisted electrodeposition method that enables the synthesis of large arrays of nanowires (NWs) on flat and curved substrates. This method uses ultra-thin (50 nm-10 μm) anodic aluminum oxide membranes as a template. We have developed a procedure that uses a two-polymer protective layer to transfer these templates onto almost any surface. We have applied this technique to the fabrication of large arrays of Ni and segmented composition Ni/Au NWs on silicon wafers, Cu tapes, and thin (0.2 mm) Cu wires. In all cases, a complete coverage with NWs is achieved. The magnetic properties of these samples show an accentuated in-plane anisotropy which is affected by the form of the substrate (flat or curve) and the length of the NWs. Unlike current lithography techniques, the fabrication method proposed here allows the integration of complex nanostructures into devices, which can be fabricated on unconventional surfaces.

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

PubMed Central

2010-01-01

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films. PMID:21170391

Controlling the opto-electronic properties of nc-SiOx:H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Samanta, Subhashis

2018-01-01

A systematic development of undoped nc-SiOx:H thin films from (SiH4 + CO2) plasma diluted by a combination of H2 and He has been investigated through structural, optical and electrical characterization and correlation. Gradual inclusion of O into a highly crystalline silicon network progressively produces a two-phase structure where Si-nanocrystals (Si-nc) are embedded into the a-SiOx:H matrix. However, at the intermediate grain boundary region the growth of ultra-nanocrystallites controls the effectiveness of the material. The ultra-nanocrystallites are the part and portion of crystallinity accommodating the dominant fraction of thermodynamically preferred 〈220〉 crystallographic orientation, most favourable for stacked layer device performance. Atomic H plays a dominant role in maintaining an improved nanocrystalliny in the network even during O inclusion, while He in its excited state (He*) maintains a good energy balance at the grain boundary and produces a significant fraction of ultra-nanocrystalline component which has been demonstrated to organize the energetically favourable 〈220〉 crystallographic orientation in the network. The nc-SiOx:H films, maintaining proportionally good electrical conductivity over an wide range of optical band gap, remarkably low microstructure factor and simultaneous high crystalline volume fraction dominantly populated by ultra-nanocrystallites of 〈220〉 crystallographic orientation mostly at the grain boundary, have been obtained in technologically most popular 13.56 MHz PECVD SiH4 plasma even at a low substrate temperature ∼250 °C, convenient for device fabrication.

The TT-PET project: a thin TOF-PET scanner based on fast novel silicon pixel detectors

NASA Astrophysics Data System (ADS)

Bandi, Y.; Benoit, M.; Cadoux, F. R.; Forshaw, D. C.; Hänni, R.; Hayakawa, D.; Iacobucci, G.; Michal, S.; Miucci, A.; Paolozzi, L.; Ratib, O.; Ripiccini, E.; Tognina, C.; Valerio, P.; Weber, M.

2018-01-01

The TT-PET project aims at developing a compact Time-of-flight PET scanner with 30ps time resolution, capable of withstanding high magnetic fields and allowing for integration in a traditional MRI scanner, providing complimentary real-time PET images. The very high timing resolution of the TT-PET scanner is achieved thanks to a new generation of Silicon-Germanium (Si-Ge) amplifiers, which are embedded in monolithic pixel sensors. The scanner is composed of 16 detection towers as well as cooling blocks, arranged in a ring structure. The towers are composed of multiple ultra-thin pixel modules stacked on top of each other. Making it possible to perform depth of interaction measurements and maximize the spatial resolution along the line of flight of the two photons emitted within a patient. This will result in improved image quality, contrast, and uniformity while drastically reducing backgrounds within the scanner. Allowing for a reduction in the amount of radioactivity delivered to the patient. Due to an expected data rate of about 250 MB/s a custom readout system for high data throughput has been developed, which includes noise filtering and reduced data pressure. The realisation of a first scanner prototype for small animals is foreseen by 2019. A general overview of the scanner will be given including, technical details concerning the detection elements, mechanics, DAQ readout, simulation and results.

Method of forming ultra thin film devices by vacuum arc vapor deposition

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, J.C.; Benson, D.K.; Tracy, C.E.

1996-03-26

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld. 5 figs.

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

1996-01-01

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld.

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

PubMed

Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

2009-01-01

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Electrochemical thinning of silicon

DOEpatents

Medernach, John W.

1994-01-01

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

High resolution, monochromatic x-ray topography capability at CHESS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finkelstein, K. D., E-mail: kdf1@cornell.edu; Pauling, A.; Brown, Z.

2016-07-27

CHESS has a monochromatic x-ray topography capability serving continually expanding user interest. The setup consists of a beam expanding monochromator, 6-circle diffactometer, and CHESS designed CMOS camera with real time sample-alignment capability. This provides rocking curve mapping with angle resolution as small as 2 µradians, spatial resolution to 3 microns, and field of view up to 7mm. Thus far the capability has been applied for: improving CVD-diamond growth, evaluating perfection of ultra-thin diamond membranes, correlating performance of diamond-based electronics with crystal defect structure, and defect analysis of single crystal silicon carbide. This paper describes our topography system, explains its capabilities,more » and presents experimental results from several applications.« less

Promising Results from Three NASA SBIR Solar Array Technology Development Programs

NASA Technical Reports Server (NTRS)

Eskenazi, Mike; White, Steve; Spence, Brian; Douglas, Mark; Glick, Mike; Pavlick, Ariel; Murphy, David; O'Neill, Mark; McDanal, A. J.; Piszczor, Michael

2005-01-01

Results from three NASA SBIR solar array technology programs are presented. The programs discussed are: 1) Thin Film Photovoltaic UltraFlex Solar Array; 2) Low Cost/Mass Electrostatically Clean Solar Array (ESCA); and 3) Stretched Lens Array SquareRigger (SLASR). The purpose of the Thin Film UltraFlex (TFUF) Program is to mature and validate the use of advanced flexible thin film photovoltaics blankets as the electrical subsystem element within an UltraFlex solar array structural system. In this program operational prototype flexible array segments, using United Solar amorphous silicon cells, are being manufactured and tested for the flight qualified UltraFlex structure. In addition, large size (e.g. 10 kW GEO) TFUF wing systems are being designed and analyzed. Thermal cycle and electrical test and analysis results from the TFUF program are presented. The purpose of the second program entitled, Low Cost/Mass Electrostatically Clean Solar Array (ESCA) System, is to develop an Electrostatically Clean Solar Array meeting NASA s design requirements and ready this technology for commercialization and use on the NASA MMS and GED missions. The ESCA designs developed use flight proven materials and processes to create a ESCA system that yields low cost, low mass, high reliability, high power density, and is adaptable to any cell type and coverglass thickness. All program objectives, which included developing specifications, creating ESCA concepts, concept analysis and trade studies, producing detailed designs of the most promising ESCA treatments, manufacturing ESCA demonstration panels, and LEO (2,000 cycles) and GEO (1,350 cycles) thermal cycling testing of the down-selected designs were successfully achieved. The purpose of the third program entitled, "High Power Platform for the Stretched Lens Array," is to develop an extremely lightweight, high efficiency, high power, high voltage, and low stowed volume solar array suitable for very high power (multi-kW to MW) applications. These objectives are achieved by combining two cutting edge technologies, the SquareRigger solar array structure and the Stretched Lens Array (SLA). The SLA SquareRigger solar array is termed SLASR. All program objectives, which included developing specifications, creating preliminary designs for a near-term SLASR, detailed structural, mass, power, and sizing analyses, fabrication and power testing of a functional flight-like SLASR solar blanket, were successfully achieved.

Ultra-thin plasma panel radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Peter S.

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

Multiple-layered effective medium approximation approach to modeling environmental effects on alumina passivated highly porous silicon nanostructured thin films measured by in-situ Mueller matrix ellipsometry

NASA Astrophysics Data System (ADS)

Mock, Alyssa; Carlson, Timothy; VanDerslice, Jeremy; Mohrmann, Joel; Woollam, John A.; Schubert, Eva; Schubert, Mathias

2017-11-01

Optical changes in alumina passivated highly porous silicon slanted columnar thin films during controlled exposure to toluene vapor are reported. Electron-beam evaporation glancing angle deposition and subsequent atomic layer deposition are utilized to deposit alumina passivated nanostructured porous silicon thin films. In-situ Mueller matrix generalized spectroscopic ellipsometry in an environmental cell is then used to determine changes in optical properties of the nanostructured thin films by inspection of individual Mueller matrix elements, each of which exhibit sensitivity to adsorption. The use of a multiple-layered effective medium approximation model allows for accurate description of the inhomogeneous nature of toluene adsorption onto alumina passivated highly porous silicon slanted columnar thin films.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Thin-Film Photovoltaic Solar Array Parametric Assessment

NASA Technical Reports Server (NTRS)

Hoffman, David J.; Kerslake, Thomas W.; Hepp, Aloysius F.; Jacobs, Mark K.; Ponnusamy, Deva

2000-01-01

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.

PubMed

Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun

2017-09-22

The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Thin Carbon Layers on Nanostructured Silicon-Properties and Applications

NASA Astrophysics Data System (ADS)

Angelescu, Anca; Kleps, Irina; Miu, Mihaela; Simion, Monica; Bragaru, Adina; Petrescu, Stefana; Paduraru, Crina; Raducanu, Aurelia

Thin carbon layers such as silicon carbide (SiC) and diamond like carbon (DLC) layers on silicon, or on nanostructured silicon substrats were obtained by different methods. This paper is a review of our results in the areas of carbon layer microfabrication technologies and their properties related to different microsystem apllications. So, silicon membranes using a-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon — DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices. Carbon thin layers on nanostructured silicon samples were also investigated with respect to the living cell adhesion on these structures. The experiments indicate that the cell attachment on the surface of carbon coatings can be controlled by deposition parameters during the technological process.

Advantages of thin silicon solar cells for use in space

NASA Technical Reports Server (NTRS)

Denman, O. S.

1978-01-01

A system definition study on the Solar Power Satellite System showed that a thin, 50 micrometers, silicon solar cell has significant advantages. The advantages include a significantly lower performance degradation in a radiation environment and high power-to-mass ratios. The advantages of such cells for an employment in space is further investigated. Basic questions concerning the operation of solar cells are considered along with aspects of radiation induced performance degradation. The question arose in this connection how thin a silicon solar cell had to be to achieve resistance to radiation degradation and still have good initial performance. It was found that single-crystal silicon solar cells could be as thin as 50 micrometers and still develop high conversion efficiencies. It is concluded that the use of 50 micrometer silicon solar cells in space-based photovoltaic power systems would be advantageous.

[Comparison of four MICS intraocular lenses regarding their rates of neodymium:YAG laser capsulotomy].

PubMed

Spyridaki, M; Höh, H

2010-03-01

The aim of this study was to evaluate the incidence of posterior capsule opacification up to 50 months following 1.7-mm bimanual MICS-cataract surgery. Bimanual MICS cataract surgery was performed in 197 eyes (135 patients) via two 1.7-mm corneal incisions. Four MICS acrylic foldable IOLs were implanted: AcriSmart 48S-5, n = 54 (Acritec GmbH, Hennigsdorf, now AT.Smart 48S Carl-Zeiss-Meditec, AG, Jena, Germany), ThinLens UltraChoice 1.0, n = 53 (Technomed GmbH, Baesweiler, Germany), AcriFlex 46, n = 41 und AcriFlex 48 CSE, n = 7 (Acrimed GmbH, Berlin, now: Lentis L-303, Oculentis GmbH, Berlin, Germany) and CareFlex, n = 43 (w2o Medizintechnik AG, Bruchsal, Germany). Statistical analysis was performed using the Kaplan-Meier technique. High levels of completeness of follow-up rates were: ThinLens 96%, CareFlex 100%, AcriSmart 93%, AcriFlex 92%. The capsulotomy rate was 43.13% for ThinLens within a mean/max. follow-up period of 801/1131 days, 34.88% for CareFlex (565/872 days), 40% for AcriSmart (988/1506 days) and 15.91% for AcriFlex (728/975 days). By limiting the follow-up period to a comparable maximum of 850 days for all four IOLs, our capsulotomy rates were as follows: ThinLens 33.33%, CareFlex 32.56 %, AcriSmart 20.0% and AcriFlex 11.36%. MICS IOLs have higher capsulotomy rates than hydrophobic acrylic lenses and sharp-edged silicone lenses. In literature comparisons MICS-IOLs do not exceed the variance levels of capsulotomy rates of PMMA, hydrophilic acrylic and silicone lenses without sharp edges. Cases of decentration or luxation of MICS-IOLs following Neodym:YAG laser capsulotomy were not detected. Capsulotomy frequency with the CareFlex was statistically significantly higher in comparison to the AcriSmart (Log Rank Mantel Cox Test, p = 0.007) and AcriFlex (log rank Mantel Cox test, p = 0.002). Capsulotomy rates observed varied for the four MICS-IOL-types tested. The posterior capsule opacification frequency of the two best MICS-IOLs (AcriFlex, AcriSmart) did not exceed the higher variance levels of posterior capsule opacification rates of the round-edged "conventional" non-MICS IOLs of PMMA, silicone or hydrophilic acryl material. Sharp-edged silicone or hydrophobic acrylic "conventional" lenses have shown lower posterior capsule opacification rates. Georg Thieme Verlag KG Stuttgart, New York.

Structural performance of ultra-thin whitetopping on Illinois roadways and parking lots.

DOT National Transportation Integrated Search

2014-08-01

A performance evaluation of ultra-thin whitetopping (UTW) pavements in Illinois was undertaken in 20122014 : to evaluate current design procedures and to determine design life criteria for future projects. The two main : components of this evaluat...

A sextuple-band ultra-thin metamaterial absorber with perfect absorption

NASA Astrophysics Data System (ADS)

Yu, Dingwang; Liu, Peiguo; Dong, Yanfei; Zhou, Dongming; Zhou, Qihui

2017-08-01

This paper presents the design, simulation and measurement of a sextuple-band ultra-thin metamaterial absorber (MA). The unit cell of this proposed structure is composed of triangular spiral-shaped complementary structures imprinted on the dielectric substrate backed by a metal ground. The measured results are in good agreement with simulations with high absorptivities of more than 90% at all six absorption frequencies. In addition, this proposed absorber has good performances of ultra-thin, polarization insensitivity and a wide-angle oblique incidence, which can easily be used in many potential applications such as detection, imaging and sensing.

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

DOEpatents

Werner, T.R.; Falco, C.M.; Schuller, I.K.

1982-08-31

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Mondal, Praloy

2017-09-01

Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant <220> crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred <220> alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

Electrochemical thinning of silicon

DOEpatents

Medernach, J.W.

1994-01-11

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

Mechanics analysis of the multi-point-load process for the thin film solar cell

NASA Astrophysics Data System (ADS)

Wang, Zhiming; Wei, Guangpu; Gong, Zhengbang

2008-02-01

The main element of thin film solar cell is silicon. Because of the special mechanical characteristic of silicon, the method of loading pressure on the thin film solar cell and the value of pressure is the key problem which must be solved during the manufacturing of thin film solar cell. This paper describes the special mechanical characteristic of silicon, discussed the test method overall; value of pressure on thin film solar cell; the elements and the method of load by ANSYS finite element, according to these theory analysis, we obtained the key conclusion in the actual operation, these result have a great meaning in industry.

Aerosol-assisted chemical vapor deposition of ultra-thin CuOx films as hole transport material for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Zhixin; Chen, Shuqun; Li, Pingping; Li, Hongyi; Wu, Junshu; Hu, Peng; Wang, Jinshu

This paper reports on the fabrication of CuOx films to be used as hole transporting layer (HTL) in CH3NH3PbI3 perovskite solar cells (PSCs). Ultra-thin CuOx coatings were grown onto FTO substrates for the first time via aerosol-assisted chemical vapor deposition (AACVD) of copper acetylacetonate in methanol. After incorporating into the PSCs prepared at ambient air, a highest power conversion efficiency (PCE) of 8.26% with HTL and of 3.34% without HTL were achieved. Our work represents an important step in the development of low-cost CVD technique for fabricating ultra-thin metal oxide functional layers in thin film photovoltaics.

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

NASA Astrophysics Data System (ADS)

Araga, Yuuki; Shimamoto, Haruo; Melamed, Samson; Kikuchi, Katsuya; Aoyagi, Masahiro

2018-04-01

Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.

Low work function, stable thin films

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2000-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

NASA Astrophysics Data System (ADS)

Gasmi, Khaled

2018-02-01

An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

NASA Astrophysics Data System (ADS)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Research and preparation of ultra purity silicon tetrachloride

NASA Astrophysics Data System (ADS)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Yang, Dian; Li, Yunhao; Guo, Shuhu

2017-10-01

This article demonstrated a technology for producing ultra-purity silicon tetrachloride, which using the high purity SiCl4 as raw material through the method of combination ray reaction with purification. This technology could remove metal impurities and compounds impurities contained hydrogen effectively. The purity of product prepared by this technology can reach at 99.9999%, content of metal impurities can be low at 0.3PPb, meeting the requirement of industry easily. This technology has the advantages of simple process, continuous operation, and stable performance.

Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

NASA Astrophysics Data System (ADS)

Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

2017-09-01

In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Scanning tunneling microscopy study of low temperature silicon epitaxy on hydrogen/silicon(001) and phosphine adsorption on silicon(111)-7x7

NASA Astrophysics Data System (ADS)

Ji, Jeong-Young

A three-chamber ultra-high-vacuum (UHV) system with preparation, scanning tunneling microscopy (STM), and chemical vapor deposition (CVD) chambers was designed and built. Here, one can perform surface preparation, STM e-beam lithography, precursor gas dosing, ion sputtering, silicon epitaxy, and various measurements such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Processes performed in the ultra-clean preparation and gas-filled CVD chambers can be monitored by transferring the samples back to the STM chamber to take topographical images. Si deposition on H-terminated Si(001)-2x1 surfaces at temperatures 300--530 K was studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. Post-growth annealing transfers the top layer atoms downward to fill in vacancies in the lower layer, restoring the crystallinity of the thin film. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness. PH3 adsorption on Si(111)-7x7 was studied for various exposures between 0.3--60 L at room temperature by means of the scanning-tunneling-microscopy (STM). PH3-, PH2-, H-reacted, and unreacted adatoms can be identified by analyzing STM images at different sample biases. Most of PH3 adsorbs dissociatively on the surface at initial exposure, generating H and PH2 adsorption sites, followed by molecular adsorption of PH3. Rest atoms are more reactive than the adatoms and PH 2-reacted rest atom sites are also observed in STM images. Statistical analysis shows that center adatoms are more reactive than corner adatoms and the saturation P coverage is ˜0.22 ML. Finally, 900 K annealing of a PH 3 dosed surface results in a disordered, partially P-covered surface and PH3 dosing at 900 K forms the same surface reconstruction as a P2-adsorbed surface at similar temperature.

Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.

PubMed

Bhaskaran, M; Sriram, S; Mitchell, D R G; Short, K T; Holland, A S; Mitchell, A

2009-01-01

This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by vacuum annealing thin films of nickel (50 nm) deposited on (100) silicon. The cross-sectional samples indicated a final silicide thickness of about 110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

Hybrid metasurface for ultra-broadband terahertz modulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.

2014-11-05

We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

NASA Astrophysics Data System (ADS)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Ultra-thin carbon-fiber paper fabrication and carbon-fiber distribution homogeneity evaluation method

NASA Astrophysics Data System (ADS)

Zhang, L. F.; Chen, D. Y.; Wang, Q.; Li, H.; Zhao, Z. G.

2018-01-01

A preparation technology of ultra-thin Carbon-fiber paper is reported. Carbon fiber distribution homogeneity has a great influence on the properties of ultra-thin Carbon-fiber paper. In this paper, a self-developed homogeneity analysis system is introduced to assist users to evaluate the distribution homogeneity of Carbon fiber among two or more two-value images of carbon-fiber paper. A relative-uniformity factor W/H is introduced. The experimental results show that the smaller the W/H factor, the higher uniformity of the distribution of Carbon fiber is. The new uniformity-evaluation method provides a practical and reliable tool for analyzing homogeneity of materials.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

Silicon-integrated thin-film structure for electro-optic applications

DOEpatents

McKee, Rodney A.; Walker, Frederick Joseph

2000-01-01

A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding

NASA Astrophysics Data System (ADS)

Horn, Alexander; Mingaeev, Ilja; Werth, Alexander; Kachel, Martin

2008-02-01

Lighting applications like OLED or on silicon for electro-optical applications need a reproducible sealing process. The joining has to be strong, the permeability for gasses and humidity very low and the process itself has to be very localized not affecting any organic or electronic parts inside the sealed region. The actual sealing process using glue does not fulfil these industrial needs. A new joining process using ultra-fast laser radiation offers a very precise joining with geometry dimensions smaller than 50 μm. Ultra-fast laser radiation is absorbed by multi-photon absorption in the glass. Due to the very definite threshold for melting and ablation the process of localized heating can be controlled without cracking. Repeating the irradiation at times smaller than the heat diffusion time the temperature in the focus is increased by heat accumulation reaching melting of the glass. Mowing the substrate relatively to the laser beam generates a seal of re-solidified glass. Joining of glass is achieved by positioning the laser focus at the interface. A similar approach is used for glass-silicon joining. The investigations presented will demonstrate the joining geometry by microscopy of cross-sections achieved by welding two glass plates (Schott D263 and AF45) with focused IR femtosecond laser radiation (wavelength λ = 1045nm, repetition rate f = 1 MHz, pulse duration t p = 500 fs, focus diameter w 0 = 4 μm, feeding velocity v= 1-10 mm/s). The strength of the welding seam is measured by tensile stress measurements and the gas and humidity is detected. A new diagnostic method for the on-line detection of the welding seam properties will be presented. Using a non-interferometric technique by quantitative phase microscopy the refractive index is measured during welding of glass in the time regime 0-2 μs. By calibration of the measured refractive index with a relation between refractive index and temperature a online-temperature detection can be achieved.

Nanocrystalline silicon thin films and grating structures for solar cells

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Sudhakar, Selvakumar; Khonina, Svetlana N.; Skidanov, Roman V.; Porfirevb, Alexey P.; Moissev, Oleg Y.; Kazanskiy, Nikolay L.; Kumar, Sushil

2016-03-01

Enhancement of optical absorption for achieving high efficiencies in thin film silicon solar cells is a challenge task. Herein, we present the use of grating structure for the enhancement of optical absorption. We have made grating structures and same can be integrated in hydrogenated micro/nanocrystalline silicon (μc/nc-Si: H) thin films based p-i-n solar cells. μc/nc-Si: H thin films were grown using plasma enhanced chemical vapor deposition method. Grating structures integrated with μc/nc-Si: H thin film solar cells may enhance the optical path length and reduce the reflection losses and its characteristics can be probed by spectroscopic and microscopic technique with control design and experiment.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing.

PubMed

Khalifa, Marouan; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-08

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.

Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing

PubMed Central

2012-01-01

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C. PMID:22873706

Monolithically interconnected silicon-film™ module technology

NASA Astrophysics Data System (ADS)

DelleDonne, E. J.; Ford, D. H.; Hall, R. B.; Ingram, A. E.; Rand, J. A.; Barnett, A. M.

1999-03-01

AstroPower is developing an advanced thin-silicon-based, photovoltaic module product. A low-cost monolithic interconnected device is being integrated into a module that combines the design and process features of advanced light trapped, thin-silicon solar cells. This advanced product incorporates a low-cost substrate, a nominally 50-μm thick grown silicon layer with minority carrier diffusion lengths exceeding the active layer thickness, light trapping due to back-surface reflection, and back-surface passivation. The thin silicon layer enables high solar cell performance and can lead to a module conversion efficiency as high as 19%. These performance design features, combined with low-cost manufacturing using relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high-performance, low-cost photovoltaic panels.

A large-area, wide-incident-angle, and polarization-independent plasmonic color filter for glucose sensing

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Chen, Wenjun

2018-01-01

We develop an effective method for glucose sensing by using a plasmonic color filter (PCF) integrated with a microfluidic chip. The morphology of PCF is composed of hybrid nanopillars fabricated with SiO2 and Au thin-films on silicon substrate. It exhibits angle-independence, polarization-independence and wafer-level fabrication, which are the most important factors for color filters for industrial applications. The shift of resonant wavelength is 56 nm with a stable bandwidth (∼30 nm) by varying concentration of glucose solution. The sensitivity is 157.61 nm/RIU and the corresponding figure-of-merit is 5.25. Such strategy can be exploited to further increase the detection and potentially enter the ultra-strong coupling regime in chemical solution sensors.

Nanostructure control: Nucleation and diffusion studies for predictable ultra thin film morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hershberger, Matthew

This thesis covers PhD research on two systems with unique and interesting physics. The first system is lead (Pb) deposited on the silicon (111) surface with the 7x7 reconstruction. Pb and Si are mutually bulk insoluble resulting in this system being an ideal case for studying metal and semiconductor interactions. Initial Pb deposition causes an amorphous wetting layer to form across to surface. Continued deposition results in Pb(111) island growth. Classic literature has classified this system as the Stranski-Krastanov growth mode although the system is not near equilibrium conditions. Our research shows a growth mode distinctly different than classical expectationsmore » and begins a discussion of reclassifying diffusion and nucleation for systems far away from the well-studied equilibrium cases.« less

Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

NASA Astrophysics Data System (ADS)

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

2015-03-01

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Black silicon: fabrication methods, properties and solar energy applications

DOE PAGES

Liu, Xiaogang; Coxon, Paul R.; Peters, Marius; ...

2014-08-04

Black silicon (BSi) represents a very active research area in renewable energy materials. The rise of BSi as a focus of study for its fundamental properties and potentially lucrative practical applications is shown by several recent results ranging from solar cells and light-emitting devices to antibacterial coatings and gas-sensors. Here in this article, the common BSi fabrication techniques are first reviewed, including electrochemical HF etching, stain etching, metal-assisted chemical etching, reactive ion etching, laser irradiation and the molten salt Fray-Farthing-Chen-Cambridge (FFC-Cambridge) process. The utilization of BSi as an anti-reflection coating in solar cells is then critically examined and appraised, basedmore » upon strategies towards higher efficiency renewable solar energy modules. Methods of incorporating BSi in advanced solar cell architectures and the production of ultra-thin and flexible BSi wafers are also surveyed. Particular attention is given to routes leading to passivated BSi surfaces, which are essential for improving the electrical properties of any devices incorporating BSi, with a special focus on atomic layer deposition of Al 2O 3. Finally, three potential research directions worth exploring for practical solar cell applications are highlighted, namely, encapsulation effects, the development of micro-nano dual-scale BSi, and the incorporation of BSi into thin solar cells. It is intended that this paper will serve as a useful introduction to this novel material and its properties, and provide a general overview of recent progress in research currently being undertaken for renewable energy applications.« less

Edge-defined film-fed growth of thin silicon sheets

NASA Technical Reports Server (NTRS)

Ettouney, H. M.; Kalejs, J. P.

1984-01-01

Finite element analysis was used on two length scales to understand crystal growth of thin silicon sheets. Thermal-capillary models of entire ribbon growth systems were developed. Microscopic modeling of morphological structure of melt/solid interfaces beyond the point of linear instability was carried out. The application to silicon system is discussed.

Additives to silane for thin film silicon photovoltaic devices

DOEpatents

Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

2013-09-17

Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

Membrane transfer of crystalline silicon thin film solar cells

NASA Astrophysics Data System (ADS)

Vempati, Venkata Kesari Nandan

Silicon has been dominating the solar industry for many years and has been touted as the gold standard of the photovoltaic world. The factors for its dominance: government subsidies and ease of processing. Silicon holds close to 90% of the market share in the material being used for solar cell production. Of which 14% belongs to single-crystalline Silicon. Although 24% efficient bulk crystalline solar cells have been reported, the industry has been looking for thin film alternatives to reduce the cost of production. Moreover with the new avenues like flexible consumer electronics opening up, there is a need to introduce the flexibility into the solar cells. Thin film films make up for their inefficiency keeping their mechanical properties intact by incorporating Anti-reflective schemes such as surface texturing, textured back reflectors and low reflective surfaces. This thesis investigates the possibility of using thin film crystalline Silicon for fabricating solar cells and has demonstrated a low cost and energy efficient way for fabricating 2microm thick single crystalline Silicon solar cells with an efficiency of 0.8% and fill factor of 35%.

Prospects of low-dimensional and nanostructured silicon-based thermoelectric materials: findings from theory and simulation

NASA Astrophysics Data System (ADS)

Neophytou, Neophytos

2015-04-01

Silicon based low-dimensional materials receive significant attention as new generation thermoelectric materials after they have demonstrated record low thermal conductivities. Very few works to-date, however, report significant advances with regards to the power factor. In this review we examine possibilities of power factor enhancement in: (i) low-dimensional Si channels and (ii) nanocrystalline Si materials. For low-dimensional channels we use atomistic simulations and consider ultra-narrow Si nanowires and ultra-thin Si layers of feature sizes below 15 nm. Room temperature is exclusively considered. We show that, in general, low-dimensionality does not offer possibilities for power factor improvement, because although the Seebeck coefficient could slightly increase, the conductivity inevitably degrades at a much larger extend. The power factor in these channels, however, can be optimized by proper choice of geometrical parameters such as the transport orientation, confinement orientation, and confinement length scale. Our simulations show that in the case where room temperature thermal conductivities as low as κ l = 2 W/mK are achieved, the ZT figure of merit of an optimized Si low-dimensional channel could reach values around unity. For the second case of materials, we show that by making effective use of energy filtering, and taking advantage of the inhomogeneity within the nanocrystalline geometry, the underlying potential profile and dopant distribution large improvements in the thermoelectric power factor can be achieved. The paper is intended to be a review of the main findings with regards to the thermoelectric performance of nanoscale Si through our simulation work as well as through recent experimental observations.

Micromachined nanocalorimetric sensor for ultra-low-volume cell-based assays.

PubMed

Johannessen, Erik A; Weaver, John M R; Bourova, Lenka; Svoboda, Petr; Cobbold, Peter H; Cooper, Jonathan M

2002-05-01

Current strategies for cell-based screening generally focus on the development of highly specific assays, which require an understanding of the nature of the signaling molecules and cellular pathways involved. In contrast, changes in temperature of cells provides a measure of altered cellular metabolism that is not stimulus specific and hence could have widespread applications in cell-based screening of receptor agonists and antagonists, as well as in the assessment of toxicity of new lead compounds. Consequently, we have developed a micromachined nanocalorimetric biological sensor using a small number of isolated living cells integrated within a subnanoliter format, which is capable of detecting 13 nW of generated power from the cells, upon exposure to a chemical or pharmaceutical stimulus. The sensor comprises a 10-junction gold and nickel thermopile, integrated on a silicon chip which was back-etched to span a 800-nm-thick membrane of silicon nitride. The thin-film membrane, which supported the sensing junctions of the thermoelectric transducer, gave the system a temperature resolution of 0.125 mK, a low heat capacity of 1.2 nJ mK(-1), and a rapid (unfiltered) response time of 12 ms. The application of the system in ultra-low-volume cell-based assays could provide a rapid endogenous screen. It offers important additional advantages over existing methods in that it is generic in nature, it does not require the use of recombinant cell lines or of detailed assay development, and finally, it can enable the use of primary cell lines or tissue biopsies.

Uncooled Cantilever Microbolometer Focal Plane Arrays with mK Temperature Resolution: Engineering Mechanics for the Next Generation

DTIC Science & Technology

2009-11-25

34Nanoindentation Stress-Strain Curves of Plasma Enhanced Chemical Vapor Deposited Silicon Oxide Thin Films," Thin Solid Films, 516 (8) (2008) 1941-1951. 9. S...1604. 5. Z. Cao* and X. Zhang, "Measurement of Stress-Strain Curves of PECVD Silicon Oxide Thin Films by Means of Nanoindentation," in Processing...Microsystems (Transducers 󈧋), Lyon, France, June 10-14, 2007. 9. Z. Cao* and X. Zhang, “Measurement of Stress-strain Curves of PECVD Silicon Oxide

Plasmonic properties of gold nanoparticles covered by silicon suboxide thin film

NASA Astrophysics Data System (ADS)

Baranov, Evgeniy; Zamchiy, Alexandr; Safonov, Aleksey; Starinskiy, Sergey; Khmel, Sergey

2017-10-01

The optical properties of nanocomposite material consisting of gold nanoparticles without/with silicon suboxide thin film were obtained. The gold film was deposited by thermal vacuum evaporation and then it was annealed in a vacuum chamber to form gold nanoparticles. The silicon suboxide thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method. The intensity of the localized surface plasmon resonance increased and the plasmon maximum peak shifted from 520 nm to 537 nm.

Epitaxial growth of silicon for layer transfer

DOEpatents

Teplin, Charles; Branz, Howard M

2015-03-24

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Generation of low work function, stable compound thin films by laser ablation

DOEpatents

Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

2001-01-01

Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Metal Induced Growth of Si Thin Films and NiSi Nanowires

DTIC Science & Technology

2010-02-25

Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

Nanoscale pillar arrays for separations

DOE PAGES

Kirchner, Teresa; Strickhouser, Rachel; Hatab, Nahla; ...

2015-04-01

The work presented herein evaluates silicon nano-pillar arrays for use in planar chromatography. Electron beam lithography and metal thermal dewetting protocols were used to create nano-thin layer chromatography platforms. With these fabrication methods we are able to reduce the size of the characteristic features in a separation medium below that used in ultra-thin layer chromatography; i.e. pillar heights are 1-2μm and pillar diameters are typically in the 200- 400nm range. In addition to the intrinsic nanoscale aspects of the systems, it is shown they can be further functionalized with nanoporous layers and traditional stationary phases for chromatography; hence exhibit broad-rangingmore » lab-on-a-chip and point-of-care potential. Because of an inherent high permeability and very small effective mass transfer distance between pillars, chromatographic efficiency can be very high but is enhanced herein by stacking during development and focusing while drying, yielding plate heights in the nm range separated band volumes. Practical separations of fluorescent dyes, fluorescently derivatized amines, and anti-tumor drugs are illustrated.« less

Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuang, Ping; Lin, Shawn-Yu, E-mail: sylin@rpi.edu; Hsieh, Mei-Li

2015-06-07

In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter statemore » wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.« less

High mobility and high stability glassy metal-oxynitride materials and devices

NASA Astrophysics Data System (ADS)

Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun

2016-04-01

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such as silicon and indium gallium zinc oxide due to high mobility value. However, zinc oxynitride has been suffered from poor reproducibility due to relatively low binding energy of nitrogen with zinc, resulting in the instability of composition and its device performance. Here we performed post argon plasma process on zinc oxynitride film, forming nano-crystalline structure in stable amorphous matrix which hampers the reaction of oxygen with zinc. Therefore, material properties and device performance of zinc oxynitride are greatly enhanced, exhibiting robust compositional stability even exposure to air, uniform phase, high electron mobility, negligible fast transient charging and low noise characteristics. Furthermore, We expect high mobility and high stability zinc oxynitride customized by plasma process to be applicable to a broad range of semiconductor and display devices.

Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

PubMed

Patton, Ryan J; Wood, Michael G; Reano, Ronald M

2017-11-01

We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

Progress in thin-film silicon solar cells based on photonic-crystal structures

NASA Astrophysics Data System (ADS)

Ishizaki, Kenji; De Zoysa, Menaka; Tanaka, Yoshinori; Jeon, Seung-Woo; Noda, Susumu

2018-06-01

We review the recent progress in thin-film silicon solar cells with photonic crystals, where absorption enhancement is achieved by using large-area resonant effects in photonic crystals. First, a definitive guideline for enhancing light absorption in a wide wavelength range (600–1100 nm) is introduced, showing that the formation of multiple band edges utilizing higher-order modes confined in the thickness direction and the introduction of photonic superlattice structures enable significant absorption enhancement, exceeding that observed for conventional random scatterers. Subsequently, experimental evidence of this enhancement is demonstrated for a variety of thin-film Si solar cells: ∼500-nm-thick ultrathin microcrystalline silicon cells, few-µm-thick microcrystalline silicon cells, and ∼20-µm-thick thin single-crystalline silicon cells. The high short-circuit current densities and/or efficiencies observed for each cell structure confirm the effectiveness of using multiple band-edge resonant modes of photonic crystals for enhancing broadband absorption in actual solar cells.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on n-type wafers, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short- wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long-wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metalisation grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

High-efficiency silicon heterojunction solar cells: Status and perspectives

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Wolf, S.; Geissbuehler, J.; Loper, P.

Silicon heterojunction technology (HJT) uses silicon thin-film deposition techniques to fabricate photovoltaic devices from mono-crystalline silicon wafers (c-Si). This enables energy-conversion efficiencies above 21 %, also at industrial-production level. In this presentation we review the present status of this technology and point out recent trends. We first discuss how the properties of thin hydrogenated amorphous silicon (a-Si:H) films can be exploited to fabricate passivating contacts, which is the key to high- efficiency HJT solar cells. Such contacts enable very high operating voltages, approaching the theoretical limits, and yield small temperature coefficients. With this approach, an increasing number of groups aremore » reporting devices with conversion efficiencies well over 20 % on both-sides contacted n-type cells, Panasonic leading the field with 24.7 %. Exciting results have also been obtained on p-type wafers. Despite these high voltages, important efficiency gains can still be made in fill factor and optical design. This requires improved understanding of carrier transport across device interfaces and reduced parasitic absorption in HJT solar cells. For the latter, several strategies can be followed: Short-wavelength losses can be reduced by replacing the front a-Si:H films with wider-bandgap window layers, such as silicon alloys or even metal oxides. Long- wavelength losses are mitigated by introducing new high-mobility TCO’s such as hydrogenated indium oxide, and also by designing new rear reflectors. Optical shadow losses caused by the front metallization grid are significantly reduced by replacing printed silver electrodes with fine-line plated copper contacts, leading also to possible cost advantages. The ultimate approach to minimize optical losses is the implementation of back-contacted architectures, which are completely devoid of grid shadow losses and parasitic absorption in the front layers can be minimized irrespective of electrical transport requirements. The validity of this approach was convincingly demonstrated by Panasonic, Japan in 2014, reporting on an interdigitated back-contacted HJT cell with an efficiency of 25.6%, setting the new single-junction c-Si record. Finally, given the virtually perfect surface passivation and excellent red response of HJT solar cells, we anticipate these devices will also become the preferred bottom cell in ultra-high efficiency c-Si-based tandem devices, exploiting better the solar spectrum. Such tandem cells have the potential to overcome the fundamental single-junction limit of silicon solar cells (29.4%). Combining HJT cells with perovskite solar cells as top cell appears to be particularly appealing.« less

Ultra-compact, flat-top demultiplexer using anti-reflection contra-directional couplers for CWDM networks on silicon.

PubMed

Shi, Wei; Yun, Han; Lin, Charlie; Greenberg, Mark; Wang, Xu; Wang, Yun; Fard, Sahba Talebi; Flueckiger, Jonas; Jaeger, Nicolas A F; Chrostowski, Lukas

2013-03-25

Wavelength-division-multiplexing (WDM) networks with wide channel grids and bandwidths are promising for low-cost, low-power optical interconnects. Wide-bandwidth, single-band (i.e., no free-spectral range) add-drop filters have been developed on silicon using anti-reflection contra-directional couplers with out-of-phase Bragg gratings. Using such filter components, we demonstrate a 4-channel, coarse-WDM demultiplexer with flat passbands of up to 13 nm and an ultra-compact size of 1.2 × 10(-3) mm(2).

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

PubMed

Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P

2015-04-24

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application

NASA Astrophysics Data System (ADS)

Qu, Sheng; Zhang, Jihua; Wu, Kaituo; Wang, Lei; Chen, Hongwei

2018-03-01

In this study, ultra-low-fire ceramic composites of Zn2Te3O8-30 wt.%TiTe3O8 (ZTT) were prepared by a solid-state reaction method. Densified at 600°C, the best microwave dielectric properties at 8.5 GHz were measured with the ɛ r , tan δ, Q × f, and τ f as 25.6, 1.5 × 10-4, 56191 GHz and 1.66 ppm/°C, respectively. Thin films of ultra-low-fire ZTT were prepared by a radio-frequency magnetron sputtering method. ZTT films which deposited on Au/NiCr/SiO2/Si (100) substrates at 200°C showed good adhesion. From ultra-low-fire ceramic to ultra-low-fire ZTT thin films, the latter maintained all the good high-frequency dielectric properties of the former: high dielectric constant ( ɛ r ˜ 25) and low dissipation factor (tan δ < 5×10-3), low leakage current density (˜ 10-9 A/cm2) and ultra low processing temperature. These excellent properties of the ultra-low-fire ZTT thin film make it possible to be integrated in MMIC and be applied in the research of GaN and GaAs MOSFET devices.

Microgravity

NASA Image and Video Library

1999-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Microgravity

NASA Image and Video Library

2000-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Ultra-thin smart acoustic metasurface for low-frequency sound insulation

NASA Astrophysics Data System (ADS)

Zhang, Hao; Xiao, Yong; Wen, Jihong; Yu, Dianlong; Wen, Xisen

2016-04-01

Insulating low-frequency sound is a conventional challenge due to the high areal mass required by mass law. In this letter, we propose a smart acoustic metasurface consisting of an ultra-thin aluminum foil bonded with piezoelectric resonators. Numerical and experimental results show that the metasurface can break the conventional mass law of sound insulation by 30 dB in the low frequency regime (<1000 Hz), with an ultra-light areal mass density (<1.6 kg/m2) and an ultra-thin thickness (1000 times smaller than the operating wavelength). The underlying physical mechanism of such extraordinary sound insulation performance is attributed to the infinite effective dynamic mass density produced by the smart resonators. It is also demonstrated that the excellent sound insulation property can be conveniently tuned by simply adjusting the external circuits instead of modifying the structure of the metasurface.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George C. (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1982-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1984-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Holographic spectrum-splitting optical systems for solar photovoltaics

NASA Astrophysics Data System (ADS)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.

The impact of nitrogen doping and reduced-niobium self-doping on the photocatalytic activity of ultra-thin Nb 3 O 8 - nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yannan; Wen, Ting; Kong, Weiqian

Ultra-thin [Nb 3O 8] -nanosheets with N doping, reduced-Nb doping and N/reduced-Nb codoping were fabricated by combining chemically controlled syntheses and liquid exfoliation, which enable comparative studies on the doping effect for photocatalytic H 2evolution.

Profilometry of thin films on rough substrates by Raman spectroscopy

PubMed Central

Ledinský, Martin; Paviet-Salomon, Bertrand; Vetushka, Aliaksei; Geissbühler, Jonas; Tomasi, Andrea; Despeisse, Matthieu; De Wolf , Stefaan; Ballif , Christophe; Fejfar, Antonín

2016-01-01

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. PMID:27922033

Feasibility study of SiGHT: a novel ultra low background photosensor for low temperature operation

DOE PAGES

Wang, Y.; Fan, A.; Fiorillo, G.; ...

2017-02-27

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

NASA Astrophysics Data System (ADS)

Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

2017-11-01

In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

DOE PAGES

Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

2016-09-02

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

Great Thermal Conductivity Enhancement of Silicone Composite with Ultra-Long Copper Nanowires.

PubMed

Zhang, Liye; Yin, Junshan; Yu, Wei; Wang, Mingzhu; Xie, Huaqing

2017-12-01

In this paper, ultra-long copper nanowires (CuNWs) were successfully synthesized at a large scale by hydrothermal reduction of divalent copper ion using oleylamine and oleic acid as dual ligands. The characteristic of CuNWs is hard and linear, which is clearly different from graphene nanoplatelets (GNPs) and multi-wall carbon nanotubes (MWCNTs). The thermal properties and models of silicone composites with three nanomaterials have been mainly researched. The maximum of thermal conductivity enhancement is up to 215% with only 1.0 vol.% CuNW loading, which is much higher than GNPs and MWCNTs. It is due to the ultra-long CuNWs with a length of more than 100 μm, which facilitates the formation of effective thermal-conductive networks, resulting in great enhancement of thermal conductivity.

Great Thermal Conductivity Enhancement of Silicone Composite with Ultra-Long Copper Nanowires

NASA Astrophysics Data System (ADS)

Zhang, Liye; Yin, Junshan; Yu, Wei; Wang, Mingzhu; Xie, Huaqing

2017-07-01

In this paper, ultra-long copper nanowires (CuNWs) were successfully synthesized at a large scale by hydrothermal reduction of divalent copper ion using oleylamine and oleic acid as dual ligands. The characteristic of CuNWs is hard and linear, which is clearly different from graphene nanoplatelets (GNPs) and multi-wall carbon nanotubes (MWCNTs). The thermal properties and models of silicone composites with three nanomaterials have been mainly researched. The maximum of thermal conductivity enhancement is up to 215% with only 1.0 vol.% CuNW loading, which is much higher than GNPs and MWCNTs. It is due to the ultra-long CuNWs with a length of more than 100 μm, which facilitates the formation of effective thermal-conductive networks, resulting in great enhancement of thermal conductivity.

Ultra-flattened nearly-zero dispersion and ultrahigh nonlinear slot silicon photonic crystal fibers with ultrahigh birefringence

NASA Astrophysics Data System (ADS)

Liao, Jianfei; Xie, Yingmao; Wang, Xinghua; Li, Dongbo; Huang, Tianye

2017-07-01

A slot silicon photonic crystal fiber (PCF) is proposed to simultaneously achieve ultrahigh birefringence, large nonlinearity and ultra-flattened nearly-zero dispersion over a wide wavelength range. By taking advantage on the slot effect, ultrahigh birefringence up to 0.0736 and ultrahigh nonlinear coefficient up to 211.48 W-1 m-1 for quasi-TE mode can be obtained at the wavelength of 1.55 μm. Moreover, ultra-flattened dispersion of 0.49 ps/(nm km) for quasi-TE mode can be achieved over a 180 nm wavelength range with low dispersion slope of 1.85 × 10-3 ps/(nm2 km) at 1.55 μm. Leveraging on these advantages, the proposed slot PCF has great potential for efficient all-optical signal processing applications.

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

PubMed Central

Dhyani, Veerendra; Das, Samaresh

2017-01-01

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

2018-02-01

In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

AES study on the chemical composition of ferroelectric BaTiO3 thin films RF sputter-deposited on silicon

NASA Technical Reports Server (NTRS)

Dharmadhikari, V. S.; Grannemann, W. W.

1983-01-01

AES depth profiling data are presented for thin films of BaTiO3 deposited on silicon by RF sputtering. By profiling the sputtered BaTiO3/silicon structures, it was possible to study the chemical composition and the interface characteristics of thin films deposited on silicon at different substrate temperatures. All the films showed that external surface layers were present, up to a few tens of angstroms thick, the chemical composition of which differed from that of the main layer. The main layer had stable composition, whereas the intermediate film-substrate interface consisted of reduced TiO(2-x) oxides. The thickness of this intermediate layer was a function of substrate temperature. All the films showed an excess of barium at the interface. These results are important in the context of ferroelectric phenomena observed in BaTiO3 thin films.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

2013-05-01

Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

Hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn

2014-11-15

Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowiremore » array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.« less

Geometric metasurface enabling polarization independent beam splitting.

PubMed

Yoon, Gwanho; Lee, Dasol; Nam, Ki Tae; Rho, Junsuk

2018-06-21

A polarization independent holographic beam splitter that generates equal-intensity beams based on geometric metasurface is demonstrated. Although conventional geometric metasurfaces have the advantages of working over a broad frequency range and having intuitive design principles, geometric metasurfaces have the limitation that they only work for circular polarization. In this work, Fourier holography is used to overcome this limitation. A perfect overlap resulting from the origin-symmetry of the encoded image enables polarization independent operation of geometric metasurfaces. The designed metasurface beam splitter is experimentally demonstrated by using hydrogenated amorphous silicon, and the device performs consistent beam splitting regardless of incident polarizations as well as wavelengths. Our device can be applied to generate equal-intensity beams for entangled photon light sources in quantum optics, and the design approach provides a way to develop ultra-thin broadband polarization independent components for modern optics.

Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, H. W.; Yang, J.; Li, Y. H.

2015-03-02

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Fabrication and etching processes of silicon-based PZT thin films

NASA Astrophysics Data System (ADS)

Zhao, Hongjin; Liu, Yanxiang; Liu, Jianshe; Ren, Tian-Ling; Liu, Li-Tian; Li, Zhijian

2001-09-01

Lead-zirconate-titanate (PZT) thin films on silicon were prepared by a sol-gel method. Phase characterization and crystal orientation of the films were investigated by x-ray diffraction analysis (XRD). It was shown that the PZT thin films had a perfect perovskite structure after annealed at a low temperature of 600 degrees C. PZT thin films were chemically etched using HCl/HF solution through typical semiconductor lithographic process, and the etching condition was optimized. The scanning electron microscopy results indicated that the PZT thin film etching problem was well solved for the applications of PZT thin film devices.

Silica substrate or portion formed from oxidation of monocrystalline silicon

DOEpatents

Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

2003-07-15

A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

A beta-ray spectrometer based on a two-or three silicon detector coincidence telescope

NASA Astrophysics Data System (ADS)

Horowitz, Y. S.; Weizman, Y.; Hirning, C. R.

1996-02-01

This report describes the operation of a beta-ray energy spectrometer based on a silicon detector telescope using two or three elements. The front detector is a planar, totally-depleted, silicon surface barrier detector that is 97 μm thick, the back detector is a room-temperature, lithium compensated, silicon detector that is 5000 μm thick, and the intermediate detector is similar to the front detector but 72 μm thick and intended to be used only in intense photon fields. The three detectors are mounted in a light-tight aluminum housing. The capability of the spectrometer to reject photons is based upon the fact that the incident photon will have a small probability of simultaneously losing detectable energy in two detectors, and an even smaller probability of losing detectable energy in all three detectors. Electrons will, however, almost always record measurable events in either the front two or all three detectors. A coincidence requirement between the detectors thus rejects photon induced events. With a 97 μm thick detector the lower energy coincidence threshold is approximately 110 keV. With an ultra-thin 40 μm thick front detector, and operated at 15°C, the spectrometer is capable of detecting even 60-70 keV electrons with a coincidence efficiency of 60%. The spectrometer has been used to measure beta radiation fields in CANDU reactor working environments, and the spectral information is intended to support dose algorithms for the LiF TLD chips used in the Ontario Hydro dosimetry program.

Silicon thin film homoepitaxy by rapid thermal atmospheric-pressure chemical vapor deposition (RT-APCVD)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monna, R.; Angermeier, D.; Slaoui, A.

1996-12-01

The homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900 C to 1,300 C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. The authors propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction ofmore » the gaseous HCl with the silicon surface and the supersaturation of silicon.« less

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

NASA Astrophysics Data System (ADS)

Zhang, Guoqing; Lina, Liu

2018-02-01

An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

Highly stable, protein resistant thin films on SiC-modified silicon substrates.

PubMed

Qin, Guoting; Zhang, Rui; Makarenko, Boris; Kumar, Amit; Rabalais, Wayne; López Romero, J Manuel; Rico, Rodrigo; Cai, Chengzhi

2010-05-21

Thin films terminated with oligo(ethylene glycol) (OEG) could be photochemically grafted onto ultrathin silicon carbide layers that were generated on silicon substrates via carbonization with acetylene at 820 degrees C. The OEG coating reduced the non-specific adsorption of fibrinogen on the substrates by 99.5% and remained resistant after storage in PBS for 4 weeks at 37 degrees C.

Monolithic microcircuit techniques and processes

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1972-01-01

Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

Electrostatic bonding of thin (cycle sine 3 mil) 7070 cover glass to Ta2O5 AR-coated thin (cycle sine 2 mil) silicon wafers and solar cells

NASA Technical Reports Server (NTRS)

Egelkrout, D. W.

1981-01-01

Electrostatic bonding of thin cover glass to thin solar cells was researched. Silicon solar cells, wafers, and Corning 7070 glass of from about 0.002" to about 0.003" in thickness were used in the investigation to establish optimum parameters for producing mechanically acceptable bonds while minimizing thermal stresses and resultant solar cell electrical parameter degradation.

Polycrystalline silicon thin-film transistors on quartz fiber

NASA Astrophysics Data System (ADS)

Sugawara, Yuta; Uraoka, Yukiharu; Yano, Hiroshi; Hatayama, Tomoaki; Fuyuki, Takashi; Nakamura, Toshihiro; Toda, Sadayuki; Koaizawa, Hisashi; Mimura, Akio; Suzuki, Kenkichi

2007-11-01

We demonstrate the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) on a thin quartz fiber for the first time. The poly-Si used in the active layer of the TFTs was prepared by excimer laser annealing of an amorphous Si thin film deposited on the fiber. Top-gated TFTs were fabricated on the fiber, and a field effect mobility of 10cm2/Vs was obtained. The proposed TFTs on a thin quartz fiber, named fiber TFTs, have potential application in microelectronic devices using TFTs fabricated on one-dimensional substrates.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, Leonard S.

1983-01-01

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

NASA Astrophysics Data System (ADS)

Kwon, Youngim; Yang, Changyol; Yoon, Sang-Hwa; Um, Han-Don; Lee, Jung-Ho; Yoo, Bongyoung

2013-11-01

A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni-P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martini, R., E-mail: roberto.martini@imec.be; imec, Kapeldreef 75, 3001 Leuven; Kepa, J.

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process.more » A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.« less

Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

1998-01-01

We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

Research on precision grinding technology of large scale and ultra thin optics

NASA Astrophysics Data System (ADS)

Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

2018-03-01

The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibson, Andrew J.; Temperton, Robert H.; Handrup, Karsten

2014-06-21

The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4′-dicarbo-xylato) -ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron spectroscopy, resonant photoemission spectroscopy, and near edge X-ray absorption fine structure spectroscopy. Calibrated X-ray absorption and valence band spectra of the monolayer and multilayer coverages reveal that charge transfer is possible from the molecule to the AlNi(110) substrate via tunnelling through the ultra-thin oxide layer and into the conduction band edge of the substrate. This charge transfer mechanism is possible from the LUMO+2 and 3 in the excited state but not from the LUMO,more » therefore enabling core-hole clock analysis, which gives an upper limit of 6.0 ± 2.5 fs for the transfer time. This indicates that ultra-thin oxide layers are a viable material for use in dye-sensitized solar cells, which may lead to reduced recombination effects and improved efficiencies of future devices.« less

Modeling of microporous silicon betaelectric converter with 63Ni plating in GEANT4 toolkit*

NASA Astrophysics Data System (ADS)

Zelenkov, P. V.; Sidorov, V. G.; Lelekov, E. T.; Khoroshko, A. Y.; Bogdanov, S. V.; Lelekov, A. T.

2016-04-01

The model of electron-hole pairs generation rate distribution in semiconductor is needed to optimize the parameters of microporous silicon betaelectric converter, which uses 63Ni isotope radiation. By using Monte-Carlo methods of GEANT4 software with ultra-low energy electron physics models this distribution in silicon was calculated and approximated with exponential function. Optimal pore configuration was estimated.

Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide.

PubMed

Wang, Ke-Yao; Foster, Mark A; Foster, Amy C

2015-06-15

Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.

An ultra-lightweight design for imperceptible plastic electronics.

PubMed

Kaltenbrunner, Martin; Sekitani, Tsuyoshi; Reeder, Jonathan; Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Drack, Michael; Schwödiauer, Reinhard; Graz, Ingrid; Bauer-Gogonea, Simona; Bauer, Siegfried; Someya, Takao

2013-07-25

Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies. Rollable and unbreakable backplanes with amorphous silicon field-effect transistors on steel substrates only 3 μm thick have been demonstrated. On polymer substrates, bending radii of 0.1 mm have been achieved in flexible electronic devices. Concurrently, the need for compliant electronics that can not only be flexed but also conform to three-dimensional shapes has emerged. Approaches include the transfer of ultrathin polyimide layers encapsulating silicon CMOS circuits onto pre-stretched elastomers, the use of conductive elastomers integrated with organic field-effect transistors (OFETs) on polyimide islands, and fabrication of OFETs and gold interconnects on elastic substrates to realize pressure, temperature and optical sensors. Here we present a platform that makes electronics both virtually unbreakable and imperceptible. Fabricated directly on ultrathin (1 μm) polymer foils, our electronic circuits are light (3 g m(-2)) and ultraflexible and conform to their ambient, dynamic environment. Organic transistors with an ultra-dense oxide gate dielectric a few nanometres thick formed at room temperature enable sophisticated large-area electronic foils with unprecedented mechanical and environmental stability: they withstand repeated bending to radii of 5 μm and less, can be crumpled like paper, accommodate stretching up to 230% on prestrained elastomers, and can be operated at high temperatures and in aqueous environments. Because manufacturing costs of organic electronics are potentially low, imperceptible electronic foils may be as common in the future as plastic wrap is today. Applications include matrix-addressed tactile sensor foils for health care and monitoring, thin-film heaters, temperature and infrared sensors, displays, and organic solar cells.

Silicon pixel-detector R&D for CLIC

NASA Astrophysics Data System (ADS)

Nürnberg, A.

2016-11-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (~ 0.2%X0 per layer for the vertex region and ~ 1%X0 per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50 μm to 150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 6525 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs.

Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

NASA Astrophysics Data System (ADS)

Oulachgar, El Hassane

As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers. This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

A Piezoelectric Unimorph Deformable Mirror Concept by Wafer Transfer for Ultra Large Space Telescopes

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Shcheglov, Kirill

2002-01-01

Future concepts of ultra large space telescopes include segmented silicon mirrors and inflatable polymer mirrors. Primary mirrors for these systems cannot meet optical surface figure requirements and are likely to generate over several microns of wavefront errors. In order to correct for these large wavefront errors, high stroke optical quality deformable mirrors are required. JPL has recently developed a new technology for transferring an entire wafer-level mirror membrane from one substrate to another. A thin membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers. The measured peak-to-valley surface error of a transferred and patterned membrane (1 mm x 1 mm x 0.016 mm) is only 9 nm. The mirror element actuation principle is based on a piezoelectric unimorph. A voltage applied to the piezoelectric layer induces stress in the longitudinal direction causing the film to deform and pull on the mirror connected to it. The advantage of this approach is that the small longitudinal strains obtainable from a piezoelectric material at modest voltages are thus translated into large vertical displacements. Modeling is performed for a unimorph membrane consisting of clamped rectangular membrane with a PZT layer with variable dimensions. The membrane transfer technology is combined with the piezoelectric bimorph actuator concept to constitute a compact deformable mirror device with a large stroke actuation of a continuous mirror membrane, resulting in a compact A0 systems for use in ultra large space telescopes.

Broadband enhancement of dielectric light trapping nanostructure used in ultra-thin solar cells

NASA Astrophysics Data System (ADS)

Yang, Dong; Xu, Zhaopeng; Bian, Fei; Wang, Haiyan; Wang, Jiazhuang; Sun, Lu

2018-03-01

A dielectric fishnet nanostructure is designed to increase the light trapping capability of ultra-thin solar cells. The complex performance of ultra-thin cells such as the optical response and electrical response are fully quantified in simulation through a complete optoelectronic investigation. The results show that the optimized light trapping nanostructure can enhances the electromagnetic resonance in active layer then lead to extraordinary enhancement of both absorption and light-conversion capabilities in the solar cell. The short-circuit current density increases by 49.46% from 9.40 mA/cm2 to 14.05 mA/cm2 and light-conversion efficiency increases by 51.84% from 9.51% to 14.44% compared to the benchmark, a solar cell with an ITO-GaAs-Ag structure.

Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito

2015-03-16

We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

KEY COMPARISON: CCQM-K32 key comparison and P84 pilot study: Amount of silicon oxide as a thickness of SiO2 on Si

NASA Astrophysics Data System (ADS)

Seah, M. P.

2008-01-01

CCQM-K32 and P84 were conducted following the pilot study P-38 to demonstrate and document the capability of interested National Metrology Institutes to measure the amount of silicon oxide on silicon wafers expressed as a thickness of SiO2 for nominal thicknesses in the range 1.5 nm to 8 nm. 'Amount of substance' may be expressed in many ways and here the measurand is the thickness of the silicon oxide layer on each of a total of 9 samples of nominal thicknesses in the range 1.5 to 8 nm on (100) and (111) Si substrates, expressed as the thickness of SiO2. This report presents the results from K32 and P84. It includes the data received for the measured values and their associated uncertainties, at 95% confidence, for the 9 samples prior to the deadline for receipt of data. The materials are grown by thermal oxidation in very clean furnaces designed for high quality gate oxides on Si wafers in European and US facilities at the same time as those for the pilot study, P-38. Separate samples were provided to each institute in special containers limiting the carbonaceous contamination to below about 0.3 nm. The 9 samples included 5 samples of ultra-thin SiO2 on (100) orientated wafers of Si and 4 samples of ultra-thin SiO2 on (111) orientated wafers of Si. The measurements from the 11 participating laboratories were conducted using ellipsometry, neutron reflectivity (NR), x-ray photoelectron spectroscopy (XPS) or x-ray reflectivity measurements (XRR), guided by the protocol developed in the pilot study P-38 and reproduced in the Appendix. The measurements are given in tables 2 and 3. A very small correction is then made for the different samples that each laboratory received as in table 4. Where appropriate, method offset values deduced from the pilot study P-38 are given in table 5 leading to comparative data in tables 6 and 7. Values for the key comparison reference values (KCRVs) and their associated uncertainties are made from the weighted means and the expanded weighted standard deviations of the means from table 6. This is provided in table 8. Graphical plots of equivalence from tables 6 and 8 are provided in figure 1 and equivalence statements are presented in Annex A. Additional XPS and XRR data from NMIJ for K32 were withdrawn from the KCRV evaluation and are given in Annex B. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCQM, according to the provisions of the CIPM Mutual Recognition Arrangement (MRA).

Ultra-high cooling rate utilizing thin film evaporation

NASA Astrophysics Data System (ADS)

Su, Fengmin; Ma, Hongbin; Han, Xu; Chen, Hsiu-hung; Tian, Bohan

2012-09-01

This research introduces a cell cryopreservation method, which utilizes thin film evaporation and provides an ultra-high cooling rate. The microstructured surface forming the thin film evaporation was fabricated from copper microparticles with an average diameter of 50 μm. Experimental results showed that a cooling rate of approximately 5×104 °C/min was achieved in a temperature range from 10 °C to -187 °C. The current investigation will give birth to a cell cryopreservation method through vitrification with relatively low concentrations of cryoprotectants.

CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

PubMed

Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

2016-09-01

A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Hot-Carrier Immunity of Polycrystalline Silicon Thin Film Transistors Using Silicon Oxynitride Gate Dielectric Formed with Plasma-Enhanced Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kunii, Masafumi

2009-11-01

An analysis is presented of the hot-carrier degradation in a polycrystalline silicon (poly-Si) thin film transistor (TFT) with a silicon oxynitride gate dielectric formed with plasma-enhanced chemical vapor deposition. An introduction of silicon oxynitride into a gate dielectric significantly improves hot-carrier immunity even under the severe stressing mode of drain avalanche hot carriers. To compensate the initial negative shift of threshold voltage for TFTs with a silicon oxynitride gate dielectric, high-pressure water vapor annealing (HWA) is applied. A comparison of TFTs with and without HWA reveals that the improvement in hot-carrier immunity is mainly attributed to the introduction of Si≡N bonds into a gate dielectric.

Fiber-Optic Temperature Sensor Using a Thin-Film Fabry-Perot Interferometer

NASA Technical Reports Server (NTRS)

Beheim, Glenn

1997-01-01

A fiber-optic temperature sensor was developed that is rugged, compact, stable, and can be inexpensively fabricated. This thin-film interferometric temperature sensor was shown to be capable of providing a +/- 2 C accuracy over the range of -55 to 275 C, throughout a 5000 hr operating life. A temperature-sensitive thin-film Fabry-Perot interferometer can be deposited directly onto the end of a multimode optical fiber. This batch-fabricatable sensor can be manufactured at a much lower cost than can a presently available sensor, which requires the mechanical attachment of a Fabry-Perot interferometer to a fiber. The principal disadvantage of the thin-film sensor is its inherent instability, due to the low processing temperatures that must be used to prevent degradation of the optical fiber's buffer coating. The design of the stable thin-film temperature sensor considered the potential sources of both short and long term drifts. The temperature- sensitive Fabry-Perot interferometer was a silicon film with a thickness of approx. 2 microns. A laser-annealing process was developed which crystallized the silicon film without damaging the optical fiber. The silicon film was encapsulated with a thin layer of Si3N4 over coated with aluminum. Crystallization of the silicon and its encapsulation with a highly stable, impermeable thin-film structure were essential steps in producing a sensor with the required long-term stability.

Thin-film reliability and engineering overview

NASA Technical Reports Server (NTRS)

Ross, R. G., Jr.

1984-01-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Thin-film reliability and engineering overview

NASA Astrophysics Data System (ADS)

Ross, R. G., Jr.

1984-10-01

The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

Potential of thin-film solar cell module technology

NASA Technical Reports Server (NTRS)

Shimada, K.; Ferber, R. R.; Costogue, E. N.

1985-01-01

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

NASA Astrophysics Data System (ADS)

Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

2016-02-01

This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Process for coating an object with silicon carbide

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1989-01-01

A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

Ultra-high-speed graphene optical modulator design based on tight field confinement in a slot waveguide

NASA Astrophysics Data System (ADS)

Kovacevic, Goran; Phare, Christopher; Set, Sze Y.; Lipson, Michal; Yamashita, Shinji

2018-06-01

We present a design of an ultra-fast in-line graphene optical modulator on a silicon waveguide with a bandwidth exceeding 100 GHz, very small power consumption below 15 fJ/bit, and insertion loss of 1.5 dB. This is achieved by utilizing the transverse-electric-mode silicon slot to tailor the overlap of graphene electrodes, thus significantly reducing the capacitance of the device while maintaining a low insertion loss and using conservative estimates of the graphene resistance. Our design is substantiated by comprehensive finite-element-method simulations and RC circuit characterization, as well as fabrication feasibility discussion.

Tunable Q-factor silicon microring resonators for ultra-low power parametric processes.

PubMed

Strain, Michael J; Lacava, Cosimo; Meriggi, Laura; Cristiani, Ilaria; Sorel, Marc

2015-04-01

A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3  dB at an ultra-low on-chip pump power of 0.7 mW.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Fan, A.; Fiorillo, G.

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

PubMed

Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

2015-03-01

We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively.

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

PubMed Central

Bi, Lei; Hu, Juejun; Jiang, Peng; Kim, Hyun Suk; Kim, Dong Hun; Onbasli, Mehmet Cengiz; Dionne, Gerald F.; Ross, Caroline A.

2013-01-01

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4)O3−δ and polycrystalline (CeY2)Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2)Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates. PMID:28788379

Theoretical requirements for broadband perfect absorption of acoustic waves by ultra-thin elastic meta-films

PubMed Central

Duan, Yuetao; Luo, Jie; Wang, Guanghao; Hang, Zhi Hong; Hou, Bo; Li, Jensen; Sheng, Ping; Lai, Yun

2015-01-01

We derive and numerically demonstrate that perfect absorption of elastic waves can be achieved in two types of ultra-thin elastic meta-films: one requires a large value of almost pure imaginary effective mass density and a free space boundary, while the other requires a small value of almost pure imaginary effective modulus and a hard wall boundary. When the pure imaginary density or modulus exhibits certain frequency dispersions, the perfect absorption effect becomes broadband, even in the low frequency regime. Through a model analysis, we find that such almost pure imaginary effective mass density with required dispersion for perfect absorption can be achieved by elastic metamaterials with large damping. Our work provides a feasible approach to realize broadband perfect absorption of elastic waves in ultra-thin films. PMID:26184117

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

PubMed

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Carbon Nanotube Tip Probes: Stability and Lateral Resolution in Scanning Probe Microscopy and Application to Surface Science to Semiconductors

NASA Technical Reports Server (NTRS)

Nguyen, Cattien V.; Chao, Kuo-Jen; Stevens, Ramsey M. D.; Delzeit, Lance; Cassell, Alan; Han, Jie; Meyyappan, M.; Arnold, James (Technical Monitor)

2001-01-01

In this paper we present results on the stability and lateral resolution capability of carbon nanotube (CNT) scanning probes as applied to atomic force microscopy (AFM). Surface topography images of ultra-thin films (2-5 nm thickness) obtained with AFM are used to illustrate the lateral resolution capability of single-walled carbon nanotube probes. Images of metal films prepared by ion beam sputtering exhibit grain sizes ranging from greater than 10 nm to as small as approximately 2 nm for gold and iridium respectively. In addition, imaging stability and lifetime of multi-walled carbon nanotube scanning probes are studied on a relatively hard surface of silicon nitride (Si3N4). AFM images Of Si3N4 surface collected after more than 15 hrs of continuous scanning show no detectable degradation in lateral resolution. These results indicate the general feasibility of CNT tips and scanning probe microscopy for examining nanometer-scale surface features of deposited metals as well as non-conductive thin films. AFM coupled with CNT tips offers a simple and nondestructive technique for probing a variety of surfaces, and has immense potential as a surface characterization tool in integrated circuit manufacturing.

Oil-Impregnated Polyethylene Films

NASA Astrophysics Data System (ADS)

Mukherjee, Ranit; Habibi, Mohammad; Rashed, Ziad; Berbert, Otacilio; Shi, Shawn; Boreyko, Jonathan

2017-11-01

Slippery liquid-infused porous surfaces (SLIPS) minimize the contact angle hysteresis of a wide range of liquids and aqueous food products. Although hydrophobic polymers are often used as the porous substrate for SLIPS, the choice of polymer has been limited to silicone-based or fluorine-based materials. Hydrocarbon-based polymers, such as polyethylene, are cost effective and widely used in food packaging applications where SLIPS would be highly desirable. However, to date there have been no reports on using polyethylene as a SLIPS substrate, as it is considered highly impermeable. Here, we show that thin films of low-density polyethylene can be stably impregnated with carbon-based oils without requiring any surface modification. Wicking tests reveal that oils with sufficient chemical compatibility follow Washburn's equation. The nanometric effective pore size of the polyethylene does result in a very low wicking speed, but by using micro-thin films and a drawdown coater, impregnation can still be completed in under one second. The oil-impregnated polyethylene films promoted ultra-slippery behavior for water, ketchup, and yogurt while remaining durable even after being submerged in ketchup for over one month. This work was supported by Bemis North America (AT-23981).

Unpolarized resonance grating reflectors with 44% fractional bandwidth.

PubMed

Niraula, Manoj; Magnusson, Robert

2016-06-01

There is immense scientific interest in the properties of resonant thin films embroidered with periodic nanoscale features. This device class possesses considerable innovation potential. Accordingly, we report unpolarized broadband reflectors enabled by a serial arrangement of a pair of polarized subwavelength gratings. Optimized with numerical methods, our elemental gratings consist of a partially etched crystalline-silicon film on a quartz substrate. The resulting reflectors exhibit extremely wide spectral reflection bands in one polarization. By arranging two such reflectors sequentially with orthogonal periodicities, there results an unpolarized spectral band that exceeds those of the individual polarized bands. In the experiments reported herein, we achieve zero-order reflectance exceeding 97% under unpolarized light incidence over a 500 nm wide wavelength band. This wideband represents a ∼44% fractional band in the near infrared. Moreover, the resonant unpolarized broadband accommodates an ultra-high reflection band spanning ∼85  nm and exceeding 99.9% in efficiency. The elemental polarization-sensitive reflectors based on one-dimensional (1D) resonant gratings have a simple design and robust performance, and are straightforward to fabricate. Hence, this technology is a promising alternative to traditional multilayer thin-film reflectors, especially at longer wavelengths of light where multilayer deposition may be infeasible or impractical.

Ultra-thin layer packaging for implantable electronic devices

NASA Astrophysics Data System (ADS)

Hogg, A.; Aellen, T.; Uhl, S.; Graf, B.; Keppner, H.; Tardy, Y.; Burger, J.

2013-07-01

State of the art packaging for long-term implantable electronic devices generally uses reliable metal and glass housings; however, these are limited in the miniaturization potential and cost reduction. This paper focuses on the development of biocompatible hermetic thin-film packaging based on poly-para-xylylene (Parylene-C) and silicon oxide (SiOx) multilayers for smart implantable microelectromechanical systems (MEMS) devices. For the fabrication, a combined Parylene/SiOx single-chamber deposition system was developed. Topological aspects of multilayers were characterized by atomic force microscopy and scanning electron microscopy. Material compositions and layer interfaces were analyzed by Fourier transform infrared spectrometry and x-ray photoelectron spectroscopy. To evaluate the multilayer corrosion protection, water vapor permeation was investigated using a calcium mirror test. The calcium mirror test shows very low water permeation rates of 2 × 10-3 g m-2 day-1 (23 °C, 45% RH) for a 4.7 µm multilayer, which is equivalent to a 1.9 mm pure Parylene-C coating. According to the packaging standard MIL-STD-883, the helium gas tightness was investigated. These helium permeation measurements predict that a multilayer of 10 µm achieves the hermeticity acceptance criterion required for long-term implantable medical devices.

Nanostructure iron-silicon thin film deposition using plasma focus device

NASA Astrophysics Data System (ADS)

Kotb, M.; Saudy, A. H.; Hassaballa, S.; Eloker, M. M.

2013-03-01

The presented study in this paper reports the deposition of nano-structure iron-silicon thin film on a glass substrate using 3.3 KJ Mather-type plasma focus device. The iron-silicon powder was put on the top of hollow copper anode electrode. The deposition was done under different experimental conditions such as numbers of electric discharge shots and angular position of substrate. The film samples were exposed to energetic argon ions generated by plasma focus device at different distances from the top of the central electrode. The exposed samples were then analyzed for their structure and optical properties using X-ray diffraction (XRD) and UV-visible spectroscopy. The structure of iron-silicon thin films deposited using plasma focus device depends on the distance from the anode, the number of focus deposition shots and the angular position of the sample

Method of manufacturing a hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2017-02-07

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing

NASA Astrophysics Data System (ADS)

Seki, Harumi; Kamimuta, Yuuichi; Mitani, Yuichiro

2018-06-01

The energy level of electron traps in silicon nitride (SiN x ) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiN x thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiN x composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiN x thin films.

Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

NASA Technical Reports Server (NTRS)

Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

1990-01-01

Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

Determination of fluorine by total reflection X-ray fluorescence spectrometry

NASA Astrophysics Data System (ADS)

Tarsoly, G.; Óvári, M.; Záray, Gy.

2010-04-01

There is a growing interest in determination of low Z elements, i.e. carbon to phosphorus, in various samples. Total reflection X-ray fluorescence spectrometry (TXRF) has been already established as a suitable trace element analytical method with low sample demand and quite good quantification limits. Recently, the determinable element range was extended towards Z = 6 (carbon). In this study, the analytical performance of the total reflection X-ray fluorescence spectrometry for determination of fluorine was investigated applying a spectrometer equipped with Cr-anode X-ray tube, multilayer monochromator, vacuum chamber, and a silicon drift detector (SDD) with ultra thin window was used. The detection limit for fluorine was found to be 5 mg L - 1 (equivalent to 10 ng absolute) in aqueous matrix. The linear range of the fluorine determination is between 15 and 500 mg L - 1 , within this range the precision is below 10%. The matrix effects of the other halogens (chlorine, bromine and iodine), and sulfate were also investigated. It has been established that the upper allowed concentration limit of the above interfering elements is 100, 200, 50 and 100 mg L - 1 for Cl, Br, I and sulfate, respectively. Moreover, the role of the pre-siliconization of the quartz carrier plate was investigated. It was found, that the presence of the silicone results in poorer analytical performance, which can be explained by the thicker sample residue and stronger self-absorption of the fluorescent radiation.

UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels

NASA Astrophysics Data System (ADS)

Berthier, Florent; Beigne, Edith; Heitzmann, Frédéric; Debicki, Olivier; Christmann, Jean-Frédéric; Valentian, Alexandre; Billoint, Olivier; Amat, Esteve; Morche, Dominique; Chairat, Soundous; Sentieys, Olivier

2016-11-01

In this paper, we propose to analyze Ultra Thin Body and Box FDSOI technology suitability and architectural solutions for IoT applications and more specifically for autonomous Wireless Sensor Nodes (WSNs). As IoT applications are extremely diversified there is a strong need for flexible solutions at design, architectural level but also at technological level. Moreover, as most of those systems are recovering their energy from the environment, they are challenged by low voltage supplies and low leakage functionalities. We detail in this paper some Ultra Thin Body and Box FDSOI 28 nm characteristics and results demonstrating that this technology could be a perfect option for multidisciplinary IoT devices. Back biasing capabilities and low voltage features are investigated demonstrating efficient high speed/low leakage flexibility. In addition, architectural solutions for WSNs microcontroller are also proposed taking advantage of Ultra Thin Body and Box FDSOI characteristics for full user applicative flexibility. A partitioned architecture between an Always Responsive part with an asynchronous Wake Up Controller (WUC) managing WSN current tasks and an On Demand part with a main processor for application maintenance is presented. First results of the Always Responsive part implemented in Ultra Thin Body and Box FDSOI 28 nm are also exposed.

Sensitivity Enhancement of Transition Metal Dichalcogenides/Silicon Nanostructure-based Surface Plasmon Resonance Biosensor

PubMed Central

Ouyang, Qingling; Zeng, Shuwen; Jiang, Li; Hong, Liying; Xu, Gaixia; Dinh, Xuan-Quyen; Qian, Jun; He, Sailing; Qu, Junle; Coquet, Philippe; Yong, Ken-Tye

2016-01-01

In this work, we designed a sensitivity-enhanced surface plasmon resonance biosensor structure based on silicon nanosheet and two-dimensional transition metal dichalcogenides. This configuration contains six components: SF10 triangular prism, gold thin film, silicon nanosheet, two-dimensional MoS2/MoSe2/WS2/WSe2 (defined as MX2) layers, biomolecular analyte layer and sensing medium. The minimum reflectivity, sensitivity as well as the Full Width at Half Maximum of SPR curve are systematically examined by using Fresnel equations and the transfer matrix method in the visible and near infrared wavelength range (600 nm to 1024 nm). The variation of the minimum reflectivity and the change in resonance angle as the function of the number of MX2 layers are presented respectively. The results show that silicon nanosheet and MX2 layers can be served as effective light absorption medium. Under resonance conditions, the electrons in these additional dielectric layers can be transferred to the surface of gold thin film. All silicon-MX2 enhanced sensing models show much better performance than that of the conventional sensing scheme where pure Au thin film is used, the highest sensitivity can be achieved by employing 600 nm excitation light wavelength with 35 nm gold thin film and 7 nm thickness silicon nanosheet coated with monolayer WS2. PMID:27305974

Microstructure and Mechanical Properties of Reaction-Formed Joints in Reaction Bonded Silicon Carbide Ceramics

NASA Technical Reports Server (NTRS)

Singh, M.

1998-01-01

A reaction-bonded silicon carbide (RB-SiC) ceramic material (Carborundum's Cerastar RB-SIC) has been joined using a reaction forming approach. Microstructure and mechanical properties of three types of reaction-formed joints (350 micron, 50-55 micron, and 20-25 micron thick) have been evaluated. Thick (approximately 350 micron) joints consist mainly of silicon with a small amount of silicon carbide. The flexural strength of thick joints is about 44 plus or minus 2 MPa, and fracture always occurs at the joints. The microscopic examination of fracture surfaces of specimens with thick joints tested at room temperature revealed the failure mode to be typically brittle. Thin joints (<50-55 micron) consist of silicon carbide and silicon phases. The room and high temperature flexural strengths of thin (<50-55 micron) reaction-formed joints have been found to be at least equal to that of the bulk Cerastar RB-SIC materials because the flexure bars fracture away from the joint regions. In this case, the fracture origins appear to be inhomogeneities inside the parent material. This was always found to be the case for thin joints tested at temperatures up to 1350C in air. This observation suggests that the strength of Cerastar RB-SIC material containing a thin joint is not limited by the joint strength but by the strength of the bulk (parent) materials.

Temperature dependence of the response of ultra fast silicon detectors

NASA Astrophysics Data System (ADS)

Mulargia, R.; Arcidiacono, R.; Bellora, A.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Cirio, R.; Dalla Betta, G. F.; Durando, S.; Fadavi, A.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Kramberger, G.; Mandic, I.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F. W.; Seiden, A.; Sola, V.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

2016-12-01

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Converting a carbon preform object to a silicon carbide object

NASA Technical Reports Server (NTRS)

Levin, Harry (Inventor)

1990-01-01

A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

Thin film studies toward improving the performance of accelerator electron sources

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identical 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(+/-0.05) x 10--13 Torr L s--1 cm--2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(+/-0.05) x 10--13 Torr L s--1 cm--2 following an initial 90 °C bake and 2(+/-20) x 10--16 Torr L s --1 cm--2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at --175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.

Thin film studies toward improving the performance of accelerator electron sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identicalmore » 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(±0.05) x 10- 13 Torr L s -1 cm -2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(±0.05) x 10 -13 Torr L s -1 cm -2 following an initial 90 °C bake and 2(±20) x 10 -16 Torr L s -1 cm -2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at -- 175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.« less

Very high-cycle fatigue failure in micron-scale polycrystalline silicon films: Effects of environment and surface oxide thickness

NASA Astrophysics Data System (ADS)

Alsem, D. H.; Timmerman, R.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

2007-01-01

Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up to 1012cycles), there is still an on-going debate on the precise mechanisms involved. We show here that for devices fabricated in the multiuser microelectromechanical system process (MUMPs) foundry and Sandia Ultra-planar, Multi-level MEMS Technology (SUMMiT V™) process and tested under equi-tension/compression loading at ˜40kHz in different environments, stress-lifetime data exhibit similar trends in fatigue behavior in ambient room air, shorter lifetimes in higher relative humidity environments, and no fatigue failure at all in high vacuum. The transmission electron microscopy of the surface oxides in the test samples shows a four- to sixfold thickening of the surface oxide at stress concentrations after fatigue failure, but no thickening after overload fracture in air or after fatigue cycling in vacuo. We find that such oxide thickening and premature fatigue failure (in air) occur in devices with initial oxide thicknesses of ˜4nm (SUMMiT V™) as well as in devices with much thicker initial oxides ˜20nm (MUMPs). Such results are interpreted and explained by a reaction-layer fatigue mechanism. Specifically, moisture-assisted subcritical cracking within a cyclic stress-assisted thickened oxide layer occurs until the crack reaches a critical size to cause catastrophic failure of the entire device. The entirety of the evidence presented here strongly indicates that the reaction-layer fatigue mechanism is the governing mechanism for fatigue failure in micron-scale polycrystalline silicon thin films.

Surface profiles and modulation of ultra-thin perfluoropolyether lubricant in contact sliding

NASA Astrophysics Data System (ADS)

Sinha, S. K.; Kawaguchi, M.; Kato, T.

2004-08-01

Deformation in shear and associated tribological behaviours of ultra-thin lubricants are of significant importance for the lubrication of magnetic hard disks and for other applications such as micro-electromechanical systems, nano-fluidics and nanotechnology. This paper presents the characteristics of the perfluoropolyether ultra-thin lubricant, in terms of its surface profiles when subjected to a contact sliding test. The results indicate that for a several-monolayers thick (~4.0-4.5 nm) lubricant film, sliding produces a considerable amount of surface roughness due to peaks of lubricant that persist during sliding; however, it can flow back or return to a smooth profile after a lapse of time when the sliding is stopped. For a monolayer-thin (~1.4-1.57 nm) film, the lubricant flow is restricted, and the rough profile created due to sliding persists and almost becomes permanent on the wear track. During sliding, due to high shear stress, a characteristic feature of lubricant profile modulation is observed. This modulation, or waviness, is due to the accumulation of lubricant in piles or islands, giving certain amplitudes and frequencies, which themselves depend upon the percentage of lubricant molecules that are chemically bonded to the substrate and the lubricant thickness. The results indicate that ultra-thin lubricants (monolayer and thicker) behave more like a semi-solid (having some sliding characteristics similar to those of rubbers) than a liquid when subjected to a high shear rate during contact sliding.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Metallization and Biopatterning on Ultra-Flexible Substrates via Dextran Sacrificial Layers

PubMed Central

Tseng, Peter; Pushkarsky, Ivan; Di Carlo, Dino

2014-01-01

Micro-patterning tools adopted from the semiconductor industry have mostly been optimized to pattern features onto rigid silicon and glass substrates, however, recently the need to pattern on soft substrates has been identified in simulating cellular environments or developing flexible biosensors. We present a simple method of introducing a variety of patterned materials and structures into ultra-flexible polydimethylsiloxane (PDMS) layers (elastic moduli down to 3 kPa) utilizing water-soluble dextran sacrificial thin films. Dextran films provided a stable template for photolithography, metal deposition, particle adsorption, and protein stamping. These materials and structures (including dextran itself) were then readily transferrable to an elastomer surface following PDMS (10 to 70∶1 base to crosslinker ratios) curing over the patterned dextran layer and after sacrificial etch of the dextran in water. We demonstrate that this simple and straightforward approach can controllably manipulate surface wetting and protein adsorption characteristics of PDMS, covalently link protein patterns for stable cell patterning, generate composite structures of epoxy or particles for study of cell mechanical response, and stably integrate certain metals with use of vinyl molecular adhesives. This method is compatible over the complete moduli range of PDMS, and potentially generalizable over a host of additional micro- and nano-structures and materials. PMID:25153326

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazmerski, L. L.

'' . . . with robust investments in research and market development, the picture changes dramatically.'' Thus, the realigned U.S. Photovoltaic Industry Roadmap highlights R&D as critical to the tipping point that will make solar photovoltaics (PV) significant in the U.S. energy portfolio--part of a well-designed plan that would bring ''2034 expectations'' to reality by 2020. Technology improvement and introduction depend on key, focused, and pertinent research contributions that range from the most fundamental through the applied. In this paper, we underscore the successes and relevance of our current systems-driven PV R&D programs, which are built on integrated capabilities. Thesemore » capabilities span atomic-level characterization, nanotechnology, new materials design, interface and device engineering, theoretical guidance and modeling, processing, measurements and analysis, and process integration. This presentation identifies and provides examples of critical research tipping points needed to foster now and near technologies (primarily crystalline silicon and thin films) and to introduce coming generations of solar PV that provide options to push us to the next performance levels (devices with ultra-high efficiencies and with ultra-low cost). The serious importance of science and creativity to U.S. PV technology ownership--and the increased focus to accelerate the time from laboratory discovery to industry adoption--are emphasized at this ''tipping point'' for solar PV.« less

Ultra-thin enhanced-absorption long-wave infrared detectors

NASA Astrophysics Data System (ADS)

Wang, Shaohua; Yoon, Narae; Kamboj, Abhilasha; Petluru, Priyanka; Zheng, Wanhua; Wasserman, Daniel

2018-02-01

We propose an architecture for enhanced absorption in ultra-thin strained layer superlattice detectors utilizing a hybrid optical cavity design. Our detector architecture utilizes a designer-metal doped semiconductor ground plane beneath the ultra-subwavelength thickness long-wavelength infrared absorber material, upon which we pattern metallic antenna structures. We demonstrate the potential for near 50% detector absorption in absorber layers with thicknesses of approximately λ0/50, using realistic material parameters. We investigate detector absorption as a function of wavelength and incidence angle, as well as detector geometry. The proposed device architecture offers the potential for high efficiency detectors with minimal growth costs and relaxed design parameters.

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

Ultra-smooth glassy graphene thin films for flexible transparent circuits

PubMed Central

Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

2016-01-01

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

Thin-film limit formalism applied to surface defect absorption.

PubMed

Holovský, Jakub; Ballif, Christophe

2014-12-15

The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

NASA Astrophysics Data System (ADS)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

Measurements of Raman crystallinity profiles in thin-film microcrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Choong, G.; Vallat-Sauvain, E.; Multone, X.; Fesquet, L.; Kroll, U.; Meier, J.

2013-06-01

Wedge-polished thin film microcrystalline silicon solar cells are prepared and used for micro-Raman measurements. Thereby, the variations of the Raman crystallinity with depth are accessed easily. Depth resolution limits of the measurement set-up are established and calculations evidencing the role of optical limits are presented. Due to this new technique, Raman crystallinity profiles of two microcrystalline silicon cells give first hints for the optimization of the profile leading to improved electrical performance of such devices.

Silicon superlattices. 2: Si-Ge heterostructures and MOS systems

NASA Technical Reports Server (NTRS)

Moriarty, J. A.

1983-01-01

Five main areas were examined: (1) the valence-and conduction-band-edge electronic structure of the thin layer ( 11 A) silicon-superlattice systems; (2) extension of thin-layer calculations to layers of thickness 11 A, where most potential experimental interest lies; (3) the electronic structure of thicker-layer (11 to 110 A) silicon superlattices; (4) preliminary calculations of impurity-scattering-limited electron mobility in the thicker-layer superlattices; and (5) production of the fine metal lines that would be required to produce on MOS superlattice.

Development of an improved high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.

1978-01-01

Efforts were concerned with optimizing techniques for thinning silicon slices in NaOH etches, initial investigations of surface texturing, variation of furnace treatments to improve cell efficiency, initial efforts on optimization of gridline and cell sizes and Pilot Line fabrication of quantities of 2 cm x 2 cm 50 micron thick cells.

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Supersonic plasma outflow in a plasmochemical method of amorphous silicon thin films formation

NASA Astrophysics Data System (ADS)

Baranova, L. V.; Strunin, V. I.; Khudaibergenov, G. Zh

2018-01-01

As a result of the numerical modeling of gasdynamic functions of a nozzle of Laval there obtained its parameters which form supersonic plasma jet outflow in a process of amorphous silicon thin films deposition. According to the nozzle design parameters, there obtained amorphous silicon thin films and studied uniformity of the thickness of the synthesized coatings. It was also performed that due to a low translational temperature at the nozzle exit the relaxation losses reduce significantly, “freezing” the vibrational degrees of freedom and the degrees of freedom of the transverse motion of the particles, and increasing the energy efficiency of the film formation process. All this is caused by the fact that on the surface of a growing film only the products of primary interaction of electrons with molecules of a silicon-containing gas in the plasmatron do interact.

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

DOE PAGES

Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; ...

2017-02-17

We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB 2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting tomore » the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.« less

Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector

NASA Technical Reports Server (NTRS)

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Luong, E.; Hong, W.; Mumolo, J.; Bae, Y.; Stillman, G. E.; Jackson, S. L.;

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

Ultra-Thin Dual-Band Polarization-Insensitive and Wide-Angle Perfect Metamaterial Absorber Based on a Single Circular Sector Resonator Structure

NASA Astrophysics Data System (ADS)

Luo, Hao; Cheng, Yong Zhi

2018-01-01

We present a simple design for an ultra-thin dual-band polarization-insensitive and wide-angle perfect metamaterial absorber (PMMA) based on a single circular sector resonator structure (CSRS). Both simulation and experimental results reveal that two resonance peaks with average absorption above 99% can be achieved. The dual-band PMMA is ultra-thin with total thickness of 0.5 mm, which is

Development of an ultra-thin film comprised of a graphene membrane and carbon nanotube vein support.

PubMed

Lin, Xiaoyang; Liu, Peng; Wei, Yang; Li, Qunqing; Wang, Jiaping; Wu, Yang; Feng, Chen; Zhang, Lina; Fan, Shoushan; Jiang, Kaili

2013-01-01

Graphene, exhibiting superior mechanical, thermal, optical and electronic properties, has attracted great interest. Considering it being one-atom-thick, and the reduced mechanical strength at grain boundaries, the fabrication of large-area suspended chemical vapour deposition graphene remains a challenge. Here we report the fabrication of an ultra-thin free-standing carbon nanotube/graphene hybrid film, inspired by the vein-membrane structure found in nature. Such a square-centimetre-sized hybrid film can realize the overlaying of large-area single-layer chemical vapour deposition graphene on to a porous vein-like carbon nanotube network. The vein-membrane-like hybrid film, with graphene suspended on the carbon nanotube meshes, possesses excellent mechanical performance, optical transparency and good electrical conductivity. The ultra-thin hybrid film features an electron transparency close to 90%, which makes it an ideal gate electrode in vacuum electronics and a high-performance sample support in transmission electron microscopy.

Ultra-thin plasma radiation detector

DOEpatents

Friedman, Peter S.

2017-01-24

A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

Ultra-thin optical vortex phase plate based on the metasurface and the angular momentum transformation

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Yan; Guo, Zhongyi; Li, Rongzhen; Zhang, Jingran; Zhang, Anjun; Qu, Shiliang

2015-04-01

The ultra-thin optical vortex phase plate (VPP) has been designed and investigated based on the metasurface of the metal rectangular split-ring resonators (MRSRRs) array. The circularly polarized incident light can convert into corresponding cross-polarization transmission light, and the phase and the amplitude of cross-polarization transmission light can be simultaneously governed by modulating two arms of the MRSRR. The MRSRR has been arranged in a special order for forming an ultra-thin optical VPP that can covert a plane wave into a vortex beam with a variety of the topological charges, and the transformation between spin angular momentum (SAM) and orbital angular momentum (OAM) has been discussed in detail. The multi-spectral characteristics of the VPP have also been investigated, and the operating bandwidth of the designed VPP is 190 nm (in the range of 710-900 nm), which enable a potential implication for integrated optics and vortex optics.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Diamond-like nanocomposite: a novel promising carbon based thin film as antireflection and passivation coating for silicon solar cell

NASA Astrophysics Data System (ADS)

Jana, Sukhendu; Das, Sayan; De, Debasish; Mondal, Anup; Gangopadhyay, Utpal

2018-02-01

Presently, silicon nitride (SiN x ) is widely used as antireflection coating (ARC) on p-type silicon solar cell. But, two highly toxic gasses ammonia and silane are used. In the present study, the ARC and passivation properties of diamond-like nanocomposite (DLN) thin film on silicon solar cell have been investigated. The DLN thin film has been deposited by rf-PACVD process using liquid precursor HMDSO in argon plasma. The film has been characterized by FESEM, HRTEM, FTIR, and Raman spectroscopy. The optical properties have been estimated by UV-vis-NIR spectroscopy. The minimum reflection has been achieved to 0.75% at 630 nm. Both the short circuit current density and open circuit voltage has been increased significantly from 28.6 mA cm-2 to 35.5 mA cm-2 and 0.551 V to 0.613 V respectively. The field effect passivation has been confirmed by dark IV characterization of c-Si /DLN heterojunction structure. All these lead to enhancement of efficiency by almost 4% absolute, which is comparable to SiN x . The ammonia and silane free deposited DLN thin film has a great potential to use as ARC for silicon based solar cell.

Black thin film silicon

NASA Astrophysics Data System (ADS)

Koynov, Svetoslav; Brandt, Martin S.; Stutzmann, Martin

2011-08-01

"Black etching" has been proposed previously as a method for the nanoscale texturing of silicon surfaces, which results in an almost complete suppression of reflectivity in the spectral range of absorption relevant for photovoltaics. The method modifies the topmost 150 to 300 nm of the material and thus also is applicable for thin films of silicon. The present work is focused on the optical effects induced by the black-etching treatment on hydrogenated amorphous and microcrystalline silicon thin films, in particular with respect to their application in solar cells. In addition to a strong reduction of the reflectivity, efficient light trapping within the modified thin films is found. The enhancement of the optical absorption due to the light trapping is investigated via photometric measurements and photothermal deflection spectroscopy. The correlation of the texture morphology (characterized via atomic force microscopy) with the optical effects is discussed in terms of an effective medium with gradually varying optical density and in the framework of the theory of statistical light trapping. Photoconductivity spectra directly show that the light trapping causes a significant prolongation of the light path within the black silicon films by up to 15 μm for ˜1 μm thick films, leading to a significant increase of the absorption in the red.

A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control.

PubMed

Zheng, Xuezhe; Chang, Eric; Amberg, Philip; Shubin, Ivan; Lexau, Jon; Liu, Frankie; Thacker, Hiren; Djordjevic, Stevan S; Lin, Shiyun; Luo, Ying; Yao, Jin; Lee, Jin-Hyoung; Raj, Kannan; Ho, Ron; Cunningham, John E; Krishnamoorthy, Ashok V

2014-05-19

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

Thin-film silicon for flexible metal-air batteries.

PubMed

Garamoun, Ahmed; Schubert, Markus B; Werner, Jürgen H

2014-12-01

Due to its high energy density, theoretical studies propose silicon as a promising candidate material for metal-air batteries. Herein, for the first time, experimental results detail the use of n-type doped amorphous silicon and silicon carbide as fuel in Si-air batteries. Thin-film silicon is particularly interesting for flexible and rolled batteries with high specific energies. Our Si-air batteries exhibit a specific capacity of 269 Ah kg(-1) and an average cell voltage of 0.85 V at a discharge current density of 7.9 μA cm(-2) , corresponding to a specific energy of 229 Wh kg(-1) . Favorably in terms of safety, low concentrated alkaline solution serves as electrolyte. Discharging of the Si-air cells continues as long as there is silicon available for oxidation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coupling of Luminescent Solar Concentrators to Plasmonic Solar Cells

NASA Astrophysics Data System (ADS)

Wang, Shu-Yi

To make inexpensive solar cells is a continuous goal for solar photovoltaic (PV) energy industry. Thin film solar cells of various materials have been developed and continue to emerge in order to replace bulk silicon solar cells. A thin film solar cell not only uses less material but also requires a less expensive refinery process. In addition, other advantages coming along with small thickness are higher open circuit voltage and higher conversion efficiency. However, thin film solar cells, especially those made of silicon, have significant optical losses. In order to address this problem, this thesis investigates the spectral coupling of thin films PV to luminescent solar concentrators (LSC). LSC are passive devices, consisting of plastic sheets embedded with fluorescent dyes which absorb part of the incoming radiation spectrum and emit at specific wavelength. The emitted light is concentrated by total internal reflection to the edge of the sheet, where the PVs are placed. Since the light emitted from the LSC edge is usually in a narrow spectral range, it is possible to employ diverse strategies to enhance PV absorption at the peak of the emission wavelength. Employing plasmonic nanostructures has been shown to enhance absorption of thin films via forward scattering, diffraction and localized surface plasmon. These two strategies are theoretically investigated here for improving the absorption and elevating the output power of a thin film solar cell. First, the idea of spectral coupling of luminescent solar concentrators to plasmonic solar cells is introduced to assess its potential for increasing the power output. This study is carried out employing P3HT/PC60BM organic solar cells and LSC with Lumogen Red dyes. A simplified spectral coupling analysis is employed to predict the power density, considering the output spectrum of the LSC equivalent to the emission spectrum of the dye and neglecting any angular dependence. Plasmonic tuning is conducted to enhance absorption at the emission peak of the dye. A factorial increase in the output power density of coupled PV as compared to PV exposed directly to solar spectrum is observed for high light concentration on the edge. These initial results motivated a more in-depth study of coupled LSC-PV system, which took into account the radiative transport inside the realistic LSC. These investigations were carried out on LSCs using Lumogen Red305 and Rhodamine 6G dyes coupled to pristine and plasmonic ultra-thin film silicon solar cells. Prediction based on detailed balance shows that the coupled LSC-plasmonic solar cell can generate 63.7 mW/cm2 with a photocurrent density of 71.3 mA/cm2 which is higher than that of cSi solar cells available on current market. The second part of the thesis focuses on PV absorption enhancement techniques. First, the effect of vertical positioning of plasmonic nanostructures on absorption enhancement was theoretically investigated to understand which one of the three mechanisms usually responsible for the enhancement (forward scattering, diffraction and localized surface plamson) plays the dominant role. Simulation results suggested that the maximum enhancement occurred when placing the nanostructures in the rear side of the cell because of longer path length due to scattering. The experimental effort then switched focus on substrate patterning, which is a less expensive alternative to plasmonic absorption enhancement. Specifically, a nanostructured substrate was prepared by a simple electrochemical process based on two-step aluminum anodization technique. The absorption of thin film silicon deposited on these substrates showed a broadband enhancement. The overall photocurrent density was up to 40% higher than that of films deposited on flat substrates. In conclusion, the studies carried out in this thesis indicate that spectral coupling of LSCs to thin film solar cells could lead to significant improvements in PV output power density. Moreover, while the absorption of thin film solar cells can be enhanced by plasmonic nanostructures, it is shown that alternative methods, such as direct deposition of the films on inexpensively nanostructured substrates could also be employed to obtain significant enhancements. Combining these strategies may lead to inexpensive solar power harvesting systems with significant economic benefits. These strategies are not material-specific but applicable to a wide range of thin film solar cells.

Silicon on ceramic process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

NASA Technical Reports Server (NTRS)

Zook, J. D.; Heaps, J. D.; Maciolek, R. B.; Koepke, B. G.; Butter, C. D.; Schuldt, S. B.

1977-01-01

The technical and economic feasibility of producing solar-cell-quality sheet silicon was investigated. The sheets were made by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in all areas of the program.

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

PubMed

Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

2013-05-20

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

Advances in Materials for Recent Low-Profile Implantable Bioelectronics

PubMed Central

Kim, Yun-Soung; Tillman, Bryan W.; Chun, Youngjae

2018-01-01

The rapid development of micro/nanofabrication technologies to engineer a variety of materials has enabled new types of bioelectronics for health monitoring and disease diagnostics. In this review, we summarize widely used electronic materials in recent low-profile implantable systems, including traditional metals and semiconductors, soft polymers, biodegradable metals, and organic materials. Silicon-based compounds have represented the traditional materials in medical devices, due to the fully established fabrication processes. Examples include miniaturized sensors for monitoring intraocular pressure and blood pressure, which are designed in an ultra-thin diaphragm to react with the applied pressure. These sensors are integrated into rigid circuits and multiple modules; this brings challenges regarding the fundamental material’s property mismatch with the targeted human tissues, which are intrinsically soft. Therefore, many polymeric materials have been investigated for hybrid integration with well-characterized functional materials such as silicon membranes and metal interconnects, which enable soft implantable bioelectronics. The most recent trend in implantable systems uses transient materials that naturally dissolve in body fluid after a programmed lifetime. Such biodegradable metallic materials are advantageous in the design of electronics due to their proven electrical properties. Collectively, this review delivers the development history of materials in implantable devices, while introducing new bioelectronics based on bioresorbable materials with multiple functionalities. PMID:29596359

Advances in Materials for Recent Low-Profile Implantable Bioelectronics.

PubMed

Chen, Yanfei; Kim, Yun-Soung; Tillman, Bryan W; Yeo, Woon-Hong; Chun, Youngjae

2018-03-29

The rapid development of micro/nanofabrication technologies to engineer a variety of materials has enabled new types of bioelectronics for health monitoring and disease diagnostics. In this review, we summarize widely used electronic materials in recent low-profile implantable systems, including traditional metals and semiconductors, soft polymers, biodegradable metals, and organic materials. Silicon-based compounds have represented the traditional materials in medical devices, due to the fully established fabrication processes. Examples include miniaturized sensors for monitoring intraocular pressure and blood pressure, which are designed in an ultra-thin diaphragm to react with the applied pressure. These sensors are integrated into rigid circuits and multiple modules; this brings challenges regarding the fundamental material's property mismatch with the targeted human tissues, which are intrinsically soft. Therefore, many polymeric materials have been investigated for hybrid integration with well-characterized functional materials such as silicon membranes and metal interconnects, which enable soft implantable bioelectronics. The most recent trend in implantable systems uses transient materials that naturally dissolve in body fluid after a programmed lifetime. Such biodegradable metallic materials are advantageous in the design of electronics due to their proven electrical properties. Collectively, this review delivers the development history of materials in implantable devices, while introducing new bioelectronics based on bioresorbable materials with multiple functionalities.

Silicon exfoliation by hydrogen implantation: Actual nature of precursor defects

NASA Astrophysics Data System (ADS)

Kuisseu, Pauline Sylvia Pokam; Pingault, Timothée; Ntsoenzok, Esidor; Regula, Gabrielle; Mazen, Frédéric; Sauldubois, Audrey; Andreazza, Caroline

2017-06-01

MeV energy hydrogen implantation in silicon followed by a thermal annealing is a very smart way to produce high crystalline quality silicon substrates, much thinner than what can be obtained by diamond disk or wire sawing. Using this kerf-less approach, ultra-thin substrates with thicknesses between 15 μm and 100 μm, compatible with microelectronic and photovoltaic applications are reported. But, despite the benefits of this approach, there is still a lack of fundamental studies at this implantation energy range. However, if very few papers have addressed the MeV energy range, a lot of works have been carried out in the keV implantation energy range, which is the one used in the smart-cut® technology. In order to check if the nature and the growth mechanism of extended defects reported in the widely studied keV implantation energy range could be extrapolated in the MeV range, the thermal evolution of extended defects formed after MeV hydrogen implantation in (100) Si was investigated in this study. Samples were implanted at 1 MeV with different fluences ranging from 6 × 1016 H/cm2 to 2 × 1017 H/cm2 and annealed at temperatures up to 873 K. By cross-section transmission electron microscopy, we found that the nature of extended defects in the MeV range is quite different of what is observed in the keV range. In fact, in our implantation conditions, the generated extended defects are some kinds of planar clusters of gas-filled lenses, instead of platelets as commonly reported in the keV energy range. This result underlines that hydrogen behaves differently when it is introduced in silicon at high or low implantation energy. The activation energy of the growth of these extended defects is independent of the chosen fluence and is between (0.5-0.6) eV, which is very close to the activation energy reported for atomic hydrogen diffusion in a perfect silicon crystal.

Enhanced red photoluminescence of quartz by silicon nanocrystals thin film deposition

NASA Astrophysics Data System (ADS)

Momeni, A.; Pourgolestani, M.; Taheri, M.; Mansour, N.

2018-03-01

The room-temperature photoluminescence properties of silicon nanocrystals (SiNCs) thin film on a quartz substrate were investigated, which presents the red emission enhancement of quartz. We show that the photoluminescence intensity of quartz, in the wavelength range of 640-700 nm, can be enhanced as much as 15-fold in the presence of the SiNCs thin film. Our results reveal that the defect states at the SiNCs/SiO2 interface can be excited more efficiently by indirect excitation via the SiNCs, leading to the prominent red photoluminescence enhancement under the photo-excitation in the range of 440-470 nm. This work suggests a simple pathway to improve silicon-based light emitting devices for photonic applications.

Performance study of double SOI image sensors

NASA Astrophysics Data System (ADS)

Miyoshi, T.; Arai, Y.; Fujita, Y.; Hamasaki, R.; Hara, K.; Ikegami, Y.; Kurachi, I.; Nishimura, R.; Ono, S.; Tauchi, K.; Tsuboyama, T.; Yamada, M.

2018-02-01

Double silicon-on-insulator (DSOI) sensors composed of two thin silicon layers and one thick silicon layer have been developed since 2011. The thick substrate consists of high resistivity silicon with p-n junctions while the thin layers are used as SOI-CMOS circuitry and as shielding to reduce the back-gate effect and crosstalk between the sensor and the circuitry. In 2014, a high-resolution integration-type pixel sensor, INTPIX8, was developed based on the DSOI concept. This device is fabricated using a Czochralski p-type (Cz-p) substrate in contrast to a single SOI (SSOI) device having a single thin silicon layer and a Float Zone p-type (FZ-p) substrate. In the present work, X-ray spectra of both DSOI and SSOI sensors were obtained using an Am-241 radiation source at four gain settings. The gain of the DSOI sensor was found to be approximately three times that of the SSOI device because the coupling capacitance is reduced by the DSOI structure. An X-ray imaging demonstration was also performed and high spatial resolution X-ray images were obtained.

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Si photonics technology for future optical interconnection

NASA Astrophysics Data System (ADS)

Zheng, Xuezhe; Krishnamoorthy, Ashok V.

2011-12-01

Scaling of computing systems require ultra-efficient interconnects with large bandwidth density. Silicon photonics offers a disruptive solution with advantages in reach, energy efficiency and bandwidth density. We review our progress in developing building blocks for ultra-efficient WDM silicon photonic links. Employing microsolder based hybrid integration with low parasitics and high density, we optimize photonic devices on SOI platforms and VLSI circuits on more advanced bulk CMOS technology nodes independently. Progressively, we successfully demonstrated single channel hybrid silicon photonic transceivers at 5 Gbps and 10 Gbps, and 80 Gbps arrayed WDM silicon photonic transceiver using reverse biased depletion ring modulators and Ge waveguide photo detectors. Record-high energy efficiency of less than 100fJ/bit and 385 fJ/bit were achieved for the hybrid integrated transmitter and receiver, respectively. Waveguide grating based optical proximity couplers were developed with low loss and large optical bandwidth to enable multi-layer intra/inter-chip optical interconnects. Thermal engineering of WDM devices by selective substrate removal, together with WDM link using synthetic wavelength comb, we significantly improved the device tuning efficiency and reduced the tuning range. Using these innovative techniques, two orders of magnitude tuning power reduction was achieved. And tuning cost of only a few 10s of fJ/bit is expected for high data rate WDM silicon photonic links.

High-performance solid state supercapacitors assembling graphene interconnected networks in porous silicon electrode by electrochemical methods using 2,6-dihydroxynaphthalen.

PubMed

Romanitan, Cosmin; Varasteanu, Pericle; Mihalache, Iuliana; Culita, Daniela; Somacescu, Simona; Pascu, Razvan; Tanasa, Eugenia; Eremia, Sandra A V; Boldeiu, Adina; Simion, Monica; Radoi, Antonio; Kusko, Mihaela

2018-06-25

The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N 2 , 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.

Use of space ultra-vacuum for high quality semiconductor thin film growth

NASA Technical Reports Server (NTRS)

Ignatiev, A.; Sterling, M.; Sega, R. M.

1992-01-01

The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.

Chemical surface deposition of ultra-thin semiconductors

DOEpatents

McCandless, Brian E.; Shafarman, William N.

2003-03-25

A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

Development of an Ultraflex-Based Thin Film Solar Array for Space Applications

NASA Technical Reports Server (NTRS)

White, Steve; Douglas, Mark; Spence, Brian; Jones, P. Alan; Piszczor, Michael F.

2003-01-01

As flexible thin film photovoltaic (FTFPV) cell technology is developed for space applications, integration into a viable solar array structure that optimizes the attributes of this cell technology is critical. An advanced version of ABLE'sS UltraFlex solar array platform represents a near-term, low-risk approach to demonstrating outstanding array performance with the implementation of FTFPV technology. Recent studies indicate that an advanced UltraFlex solar array populated with 15% efficient thin film cells can achieve over 200 W/kg EOL. An overview on the status of hardware development and the future potential of this technology is presented.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Swap intensified WDR CMOS module for I2/LWIR fusion

NASA Astrophysics Data System (ADS)

Ni, Yang; Noguier, Vincent

2015-05-01

The combination of high resolution visible-near-infrared low light sensor and moderate resolution uncooled thermal sensor provides an efficient way for multi-task night vision. Tremendous progress has been made on uncooled thermal sensors (a-Si, VOx, etc.). It's possible to make a miniature uncooled thermal camera module in a tiny 1cm3 cube with <1W power consumption. For silicon based solid-state low light CCD/CMOS sensors have observed also a constant progress in terms of readout noise, dark current, resolution and frame rate. In contrast to thermal sensing which is intrinsic day&night operational, the silicon based solid-state sensors are not yet capable to do the night vision performance required by defense and critical surveillance applications. Readout noise, dark current are 2 major obstacles. The low dynamic range at high sensitivity mode of silicon sensors is also an important limiting factor, which leads to recognition failure due to local or global saturations & blooming. In this context, the image intensifier based solution is still attractive for the following reasons: 1) high gain and ultra-low dark current; 2) wide dynamic range and 3) ultra-low power consumption. With high electron gain and ultra low dark current of image intensifier, the only requirement on the silicon image pickup device are resolution, dynamic range and power consumption. In this paper, we present a SWAP intensified Wide Dynamic Range CMOS module for night vision applications, especially for I2/LWIR fusion. This module is based on a dedicated CMOS image sensor using solar-cell mode photodiode logarithmic pixel design which covers a huge dynamic range (> 140dB) without saturation and blooming. The ultra-wide dynamic range image from this new generation logarithmic sensor can be used directly without any image processing and provide an instant light accommodation. The complete module is slightly bigger than a simple ANVIS format I2 tube with <500mW power consumption.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

DTIC Science & Technology

2012-02-21

passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films

NASA Astrophysics Data System (ADS)

Nakashima, Ryosuke; Shin, Ryota; Hanafusa, Hiroaki; Higashi, Seiichiro

2017-06-01

We have successfully generated ultra high-power thermal plasma jet (Super TPJ: s-TPJ) by increasing the Ar gas supply pressure to 0.4 MPa and the flow rate to 18 L/min. DC arc discharge was stably performed under a supply power of 4.6 kW. The peak power density of s-TPJ reached 64.1 kW/cm2 and enabled us to melt and recrystallize amorphous silicon (a-Si) films on quartz substrates with a scanning speed as high as 8000 mm/s. Under ultra high-speed scanning faster than 3000 mm/s, we observed granular crystal growth (GCG) competing with conventional high-speed lateral crystallization (HSLC). When further high speed scanning was performed, we observed a significant increase in grain density, which suggests spontaneous nucleation in undercooled molten Si as the origin of GCG. When we crystallized an isolated pattern of 6 × 6 µm2 under GCG conditions, single crystalline growth was successfully achieved.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Zhang, Yanmin

2013-11-14

Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructuremore » after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases.« less

Ultra-thin and -broadband microwave magnetic absorber enhanced by phase gradient metasurface incorporation

NASA Astrophysics Data System (ADS)

Fan, Ya; Wang, Jiafu; Li, Yongfeng; Pang, Yongqiang; Zheng, Lin; Xiang, Jiayu; Zhang, Jieqiu; Qu, Shaobo

2018-05-01

Based on the effect of anomalous reflection and refraction caused by the circularly cross-polarized phase gradient metasurface (PGM), an ultra-thin and -broadband composite absorber composed of metasurface and conventional magnetic absorbing film is proposed and demonstrated in this paper. In the case of keeping nearly the same thickness of absorbing layer, the equivalent thickness of magnetic absorbing film is enlarged by the effect of anomalous reflection and refraction, resulting in the expansion and improvement of the absorbing bandwidth and efficiency in low microwave frequency. A biarc metallic sub-cell for circularly crossed polarization is adopted to form a broadband phase gradient, by the means of rotating the Pancharatnam–Berry phases. As indicated in the experimental results, the fabricated 3.6 mm-thick absorber can averagely absorb microwave energy with the specular reflection below  ‑10 dB in the frequency interval of 2–12 GHz, which shows a good match with simulated results. Due to ultra-thin thickness and ultra-wide operating bandwidth, the proposed application of PGM in absorbing can provide an alternative way to enhance the absorbing property of current absorbing materials.

Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya

2011-01-07

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at themore » low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.« less

Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

NASA Astrophysics Data System (ADS)

Li, Nanxi; Purnawirman, Purnawirman; Magden, E. Salih; Singh, Gurpreet; Singh, Neetesh; Baldycheva, Anna; Hosseini, Ehsan S.; Sun, Jie; Moresco, Michele; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael R.

2018-02-01

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 +/- 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 +/- 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Design of an ultra-thin absorption layer with magnetic materials based on genetic algorithm at the S band

NASA Astrophysics Data System (ADS)

Wang, Fang; Yang, Xiaoning; Liu, Xiaoning; Niu, Tiaoming; Wang, Jing; Mei, Zhonglei; Jian, Yabin

2018-04-01

In this work, we design an ultra-thin absorption coating at the S band, and the total thickness is less than 2 mm. For incident angle less than 30 degree and the whole S band, the reflection is less than -5 dB. The coating is constructed with 4/3 layers of magnetic material with different thicknesses, which are optimized by using genetic algorithm. Analytic and simulation results confirm the correctness of the design.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Approaching the ideal elastic strain limit in silicon nanowires

PubMed Central

Zhang, Hongti; Tersoff, Jerry; Xu, Shang; Chen, Huixin; Zhang, Qiaobao; Zhang, Kaili; Yang, Yong; Lee, Chun-Sing; Tu, King-Ning; Li, Ju; Lu, Yang

2016-01-01

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid–grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this “deep ultra-strength” for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising “elastic strain engineering” applications. PMID:27540586

Mechanical measurements on lithium phosphorous oxynitride coated silicon thin film electrodes for lithium-ion batteries during lithiation and delithiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Obeidi, Ahmed, E-mail: alobeidi@mit.edu; Thompson, Carl V., E-mail: reiner.moenig@kit.edu, E-mail: cthomp@mit.edu; Kramer, Dominik, E-mail: dominik.kramer@kit.edu

2016-08-15

The development of large stresses during lithiation and delithiation drives mechanical and chemical degradation processes (cracking and electrolyte decomposition) in thin film silicon anodes that complicate the study of normal electrochemical and mechanical processes. To reduce these effects, lithium phosphorous oxynitride (LiPON) coatings were applied to silicon thin film electrodes. Applying a LiPON coating has two purposes. First, the coating acts as a stable artificial solid electrolyte interphase. Second, it limits mechanical degradation by retaining the electrode's planar morphology during cycling. The development of stress in LiPON-coated electrodes was monitored using substrate curvature measurements. LiPON-coated electrodes displayed highly reproducible cycle-to-cyclemore » behavior, unlike uncoated electrodes which had poorer coulombic efficiency and exhibited a continual loss in stress magnitude with continued cycling due to film fracture. The improved mechanical stability of the coated silicon electrodes allowed for a better investigation of rate effects and variations of mechanical properties during electrochemical cycling.« less

Automated assembly of Gallium Arsenide and 50-micron thick silicon solar cell modules

NASA Technical Reports Server (NTRS)

Mesch, H. G.

1984-01-01

The TRW automated solar array assembly equipment was used for the module assembly of 300 GaAs solar cells and 300 50 micron thick silicon solar cells (2 x 4 cm in size). These cells were interconnected with silver plated Invar tabs by means of welding. The GaAs cells were bonded to Kapton graphite aluminum honeycomb graphite substrates and the thin silicon cells were bonded to 0.002 inch thick single layer Kapton substrates. The GaAs solar cell module assembly resulted in a yield of 86% and the thin cell assembly produced a yield of 46% due to intermittent sticking of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield of greater than 80%).

Enhanced light absorption in an ultrathin silicon solar cell utilizing plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Xiao, Sanshui; Mortensen, Niels A.

2012-10-01

Nowadays, bringing photovoltaics to the market is mainly limited by high cost of electricity produced by the photovoltaic solar cell. Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is generally limited by poor light absorption. We propose an ultrathin-film silicon solar cell configuration based on SOI structure, where the light absorption is enhanced by use of plasmonic nanostructures. By placing a one-dimensional plasmonic nanograting on the bottom of the solar cell, the generated photocurrent for a 200 nm-thickness crystalline silicon solar cell can be enhanced by 90% in the considered wavelength range. These results are paving a promising way for the realization of high-efficiency thin-film solar cells.

Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

PubMed

Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

2007-08-01

Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Silicone substrate with in situ strain relief for stretchable thin-film transistors

NASA Astrophysics Data System (ADS)

Graz, Ingrid M.; Cotton, Darryl P. J.; Robinson, Adam; Lacour, Stéphanie P.

2011-03-01

We have manufactured stretchable thin-film transistors and interconnects directly onto an engineered silicone matrix with localized and graded mechanical compliance. The fabrication only involves planar and standard processing. Brittle active device materials are patterned on non deformable elastomer regions (strain <1% at all times) while interconnects run smoothly from "stiff" to "soft" elastomer. Pentacene thin-film transistors sustain applied strain up to 13% without electrical degradation and mechanical fracture. This integrated approach opens promising options for the manufacture of physically adaptable and transformable circuitry.

Low temperature surface passivation of crystalline silicon and its application to interdigitated back contact silicon heterojunction (ibc-shj) solar cell

NASA Astrophysics Data System (ADS)

Shu, Zhan

With the absence of shading loss together with improved quality of surface passivation introduced by low temperature processed amorphous silicon crystalline silicon (a-Si:H/c-Si) heterojunction, the interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell exhibits a potential for higher conversion efficiency and lower cost than a traditional front contact diffused junction solar cell. In such solar cells, the front surface passivation is of great importance to achieve both high open-circuit voltage (Voc) and short-circuit current (Jsc). Therefore, the motivation of this work is to develop a low temperature processed structure for the front surface passivation of IBC-SHJ solar cells, which must have an excellent and stable passivation quality as well as a good anti-reflection property. Four different thin film materials/structures were studied and evaluated for this purpose, namely: amorphous silicon nitride (a-SiNx:H), thick amorphous silicon film (a-Si:H), amorphous silicon/silicon nitride/silicon carbide (a-Si:H/a-SiN x:H/a-SiC:H) stack structure with an ultra-thin a-Si:H layer, and zinc sulfide (ZnS). It was demonstrated that the a-Si:H/a-SiNx:H/a-SiC:H stack surpasses other candidates due to both of its excellent surface passivation quality (SRV<5 cm/s) and lower absorption losses. The low recombination rate at the stack structure passivated c-Si surface is found to be resulted from (i) field effect passivation due to the positive fixed charge (Q fix~1x1011 cm-2 with 5 nm a-Si:H layer) in a-SiNx:H as measured from capacitance-voltage technique, and (ii) reduced defect state density (mid-gap Dit~4x1010 cm-2eV-1) at a-Si:H/c-Si interface provided by a 5 nm thick a-Si:H layer, as characterized by conductance-frequency measurements. Paralleled with the experimental studies, a computer program was developed in this work based on the extended Shockley-Read-Hall (SRH) model of surface recombination. With the help of this program, the experimental injection level dependent SRV curves of the stack passivated c-Si samples were successfully reproduced and the carrier capture cross sections of interface defect states were extracted. Additionally, anti-reflection properties of the stack structure were optimized and optical losses were analyzed. The Voc over 700 mV and Jsc over 38 mA/cm2 were achieved in IBC-SHJ solar cells using the stack structure for front surface passivation. Direct comparison shows that such low temperature deposited stack structure developed in this work achieves comparable device performance to the high temperature processed front surface passivation structure used in other high efficiency IBC solar cells. However, the lower fill factor (FF) of IBC-SHJ solar cell as compared with traditional front a-Si:H/c-Si heterojunction cell (HIT cell) greatly limits the overall performance of these devices. Two-dimensional (2D) simulations were used to comparatively model the HIT and IBC-SHJ solar cells to understand the underlying device physics which controls cell performance. The effects of a wide range of device parameters were investigated in the simulation, and pathways to improve the FF of IBC-SHJ solar cell were suggested.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

Feasibility demonstration for electroplating ultra-thin polyimide film. [fabricating film for space erectable structures

NASA Technical Reports Server (NTRS)

Schneier, R.; Braswell, T. V.; Vaughn, R. W.

1978-01-01

The effect of electrodeposition variables on film thickness was investigated using a dilute polyimide solution as a bath into which aluminum (as foil or as a vapor deposited coating) was immersed. The electrodeposited film was dried for 2 hours at 93 C (primarily to remove solvent) and cured for 18 hours at 186 C. Infrared studies indicate that imide formation (curing) occurs at 149 C under vacuum. From a conceptual viewpoint, satisfactory film metallized on one side can be obtained by this method. The cured ultra thin polyimide film exhibits properties equivalent to those of commercial film, and the surface appearance of the strippable polyimide film compares favorably with that of a sample of commercial film of thicker gauge. The feasibility of manufacturing approximately one million sq m of ultra thin film capable of being joined to fabricate an 800 m by 9 800 m square from starting material 0.5 to 1 m wide for space erectable structures was demonstrated.

Ultra-thin L1{sub 0}-FePt for perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Pin; Chow, Gan Moog; Chen, Jing-Sheng, E-mail: msecj@nus.edu.sg

2014-05-07

Perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves (PSVs) with ultra-thin L1{sub 0}-FePt alloy free layer possessing high anisotropy and thermal stability have been fabricated and studied. The thickness of the L1{sub 0}-FePt layer was varied between 2 and 4 nm. The PSV became increasingly decoupled with reduced L1{sub 0}-FePt thickness due to the larger difference between the coercivity of the L1{sub 0}-FePt and [Co/Pd]{sub 30} films. The PSV with an ultra-thin L1{sub 0}-FePt free layer of 2 nm displayed a high K{sub u} of 2.21 × 10{sup 7} ergs/cm{sup 3}, high thermal stability of 84 and a largest giant magnetoresistance of 0.54%.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

NASA Astrophysics Data System (ADS)

Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

2014-03-01

LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

Ultra-thin narrow-band, complementary narrow-band, and dual-band metamaterial absorbers for applications in the THz regime

NASA Astrophysics Data System (ADS)

Astorino, Maria Denise; Frezza, Fabrizio; Tedeschi, Nicola

2017-02-01

In this paper, ultra-thin narrow-band, complementary narrow-band, and dual-band metamaterial absorbers (MMAs), exploiting the same electric ring resonator configuration, are investigated at normal and oblique incidence for both transverse electric (TE) and transverse magnetic (TM) polarizations, and with different physical properties in the THz regime. In the analysis of the ultra-thin narrow-band MMA, the limit of applicability of the transmission line model has been overcome with the introduction of a capacitance which considers the z component of the electric field. These absorbing structures have shown a wide angular response and a polarization-insensitive behavior due to the introduction of a conducting ground plane and to the four-fold rotational symmetry of the resonant elements around the propagation axis. We have adopted a retrieval procedure to extract the effective electromagnetic parameters of the proposed MMAs and we have compared the simulated and analytical results through the interference theory.

Plasmonic excitation-assisted optical and electric enhancement in ultra-thin solar cells: the influence of nano-strip cross section

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabaeian, Mohammad, E-mail: sabaiean@scu.ac.ir; Heydari, Mehdi; Ajamgard, Narges

The effects of Ag nano-strips with triangle, rectangular and trapezoid cross sections on the optical absorption, generation rate, and short-circuit current density of ultra-thin solar cells were investigated. By putting the nano-strips as a grating structure on the top of the solar cells, the waveguide, surface plasmon polariton (SPP), and localized surface plasmon (LSP) modes, which are excited with the assistance of nano-strips, were evaluated in TE and TM polarizations. The results show, firstly, the TM modes are more influential than TE modes in optical and electrical properties enhancement of solar cell, because of plasmonic excitations in TM mode. Secondly,more » the trapezoid nano-strips reveal noticeable impact on the optical absorption, generation rate, and short-circuit current density enhancement than triangle and rectangular ones. In particular, the absorption of long wavelengths which is a challenge in ultra-thin solar cells is significantly improved by using Ag trapezoid nano-strips.« less

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline H. (Inventor)

2015-01-01

A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

NASA Astrophysics Data System (ADS)

Es-Sakhi, Azzedin D.

Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

PubMed

Nan, Tianxiang; Zhou, Ziyao; Liu, Ming; Yang, Xi; Gao, Yuan; Assaf, Badih A; Lin, Hwaider; Velu, Siddharth; Wang, Xinjun; Luo, Haosu; Chen, Jimmy; Akhtar, Saad; Hu, Edward; Rajiv, Rohit; Krishnan, Kavin; Sreedhar, Shalini; Heiman, Don; Howe, Brandon M; Brown, Gail J; Sun, Nian X

2014-01-14

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-02-23

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure.more » Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.« less

High-resolution, large dynamic range fiber-optic thermometer with cascaded Fabry-Perot cavities.

PubMed

Liu, Guigen; Sheng, Qiwen; Hou, Weilin; Han, Ming

2016-11-01

The paradox between a large dynamic range and a high resolution commonly exists in nearly all kinds of sensors. Here, we propose a fiber-optic thermometer based on dual Fabry-Perot interferometers (FPIs) made from the same material (silicon), but with different cavity lengths, which enables unambiguous recognition of the dense fringes associated with the thick FPI over the free-spectral range determined by the thin FPI. Therefore, the sensor combines the large dynamic range of the thin FPI and the high resolution of the thick FPI. To verify this new concept, a sensor with one 200 μm thick silicon FPI cascaded by another 10 μm thick silicon FPI was fabricated. A temperature range of -50°C to 130°C and a resolution of 6.8×10^-3°C were demonstrated using a simple average wavelength tracking demodulation. Compared to a sensor with only the thick silicon FPI, the dynamic range of the hybrid sensor was more than 10 times larger. Compared to a sensor with only the thin silicon FPI, the resolution of the hybrid sensor was more than 18 times higher.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

Silicon-sheet and thin-film cell and module technology potential: Issue study

NASA Technical Reports Server (NTRS)

Shimada, K.; Costogue, E. N.; Ferber, R. R.

1984-01-01

The development of high-efficiency low-cost crystalline silicon ribbon and thih-film solar cells for the energy national photovoltaics program was examined. The findings of an issue study conducted are presented. The collected data identified the status of the technology, future research needs, and problems experienced. The potentials of present research activities to meet the Federal/industry long-term technical goal of achieving 15 cents per kilowatt-hour levelized PV energy cost are assessed. Recommendations for future research needs related to crystalline silicon ribbon and thin-film technologies for flat-plate collectors are also included.

Radiation resistance of thin-film solar cells for space photovoltaic power

NASA Technical Reports Server (NTRS)

Woodyard, James R.; Landis, Geoffrey A.

1991-01-01

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Transmissive metallic contact for amorphous silicon solar cells

DOEpatents

Madan, A.

1984-11-29

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

PubMed

Zhang, Lin; Lin, Qiang; Yue, Yang; Yan, Yan; Beausoleil, Raymond G; Willner, Alan E

2012-01-16

We propose a novel silicon waveguide that exhibits four zero-dispersion wavelengths for the first time, to the best of our knowledge, with a flattened dispersion over a 670-nm bandwidth. This holds a great potential for exploration of new nonlinear effects and achievement of ultra-broadband signal processing on a silicon chip. As an example, we show that an octave-spanning supercontinuum assisted by dispersive wave generation can be obtained in silicon, over a wavelength range from 1217 to 2451 nm, almost from bandgap wavelength to half-bandgap wavelength. Input pulse is greatly compressed to 10 fs.

Novel Waveguide Architectures for Light Sources in Silicon Photonics

NASA Astrophysics Data System (ADS)

Tummidi, Ravi Sekhar

Of the many challenges which are threatening to derail the success trend set by Moore's Law, perhaps the most prominent one is the "Interconnect Bottleneck". The metallic interconnections which carry inter-chip and intra-chip signals are increasingly proving to be inadequate to carry the enormous amount of data due to band-width limitations, cross talk and increased latency. A silicon based optical interconnect is showing enormous promise to address this issue in a cost effective manner by leveraging the extremely matured CMOS fabrication infrastructure. An optical interconnect system consists of a low loss waveguide, modulator, photo detector and a light source. Of these the only component yet to be demonstrated in silicon is a CMOS compatible electrically pumped silicon based laser. The present work is our endeavor towards the goal of a practical light source in silicon. To this end we have focused our efforts on horizontal slot waveguide which consists of a nm thin low index silica layer sandwiched between two high index silicon layers. Such a structure provides an exceptionally high confinement for the TM-like mode in the thin silica slot. The shallow ridge profile of the waveguide allows in principle for lateral electrical access to the core of the waveguide for excitation of the slot embedded gain material like erbium or nano-crystal sensitized erbium using tunneling, polarization transfer or transport. Low losses in the proposed structure are paramount due to the low gain expectation (˜1dB/cm) from CMOS compatible gain media. This dissertation details the novel techniques conceived to mitigate the severe lateral radiation leakage loss of the TM-like mode in these waveguides and resonators using "Magic Widths" and "Magic Radii" designs. New fabrication techniques are discussed which were developed to achieve ultra-smooth waveguide surfaces to substantially reduce the scattering induced losses in the Silicon-on-Insulator (SOI) high index contrast system. This enabled us to achieve resonators with Qs of 1.6x106 for the TE-like mode in non-slot configurations and 3x105 for the TM-like mode in full slot configuration, the highest yet reported for this type of structure and close to our design requirements for a laser. Erbium was incorporated into the silica slot just 8.3 nm thick and photoluminescence was observed in full waveguide configuration. A simple phenomenological model based on spontaneous emission into a waveguide mode was developed, which predicted >10x Purcell enhancement of the luminescence decay in these slot waveguides even in the absence of a resonator, a result also yielded by a rigorous quantum electrodynamic analysis. These enhanced spontaneous emission rates were experimentally verified using time resolved photoluminescence decay and luminescence power measurements. The results so far indicate that these slot structures could be the enablers for very efficient LEDs due to the highly preferential characteristic of the spontaneous emission to go into the single guided mode. The future goal will be to harness this behavior for novel silicon photonic light sources.

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

NASA Astrophysics Data System (ADS)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.

Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion

DOE PAGES

Rapp, L.; Haberl, B.; Pickard, C. J.; ...

2015-06-29

Ordinary materials can transform into novel phases with new crystal structures at extraordinary high pressure and temperature applied under both equilibrium and non-equilibrium conditions 1-6. The recently developed method of ultra-short laser-induced confined microexplosions 7-9 extends the range of possible new phases by initiating a highly non-equilibrium plasma state deep inside a bulk material 7-12. Ultra-high quenching rates can help to overcome kinetic barriers to the formation of new metastable phases, while the surrounding pristine crystal confines the affected material and preserves it for further study 10-12. Here we demonstrate that ultra-rapid pressure release from a completely disordered plasma statemore » in silicon produces several new metastable end phases quenched to ambient conditions. Their structure is determined from comparison to an ab initio random structure search which revealed six new energetically competitive potential phases, four tetragonal and two monoclinic ones. We show the presence of bt8 and st12, which have been predicted theoretically previously 13-15, but have not been observed in nature or in laboratory experiments. Additionally, the presence of the as yet unidentified silicon phase, Si-VIII and two of our other predicted tetragonal phases are highly likely within laser-affected zones. These findings pave the way for new materials with novel and exotic properties.« less

Electrostatic bonding of thin (approximately 3 mil) 7070 cover glass to Ta2O5 AR-coated thin (approximately 2 mil) silicon wafers and solar cells

NASA Technical Reports Server (NTRS)

Egelkrout, D. W.; Horne, W. E.

1980-01-01

Electrostatic bonding (ESB) of thin (3 mil) Corning 7070 cover glasses to Ta2O5 AR-coated thin (2 mil) silicon wafers and solar cells is investigated. An experimental program was conducted to establish the effects of variations in pressure, voltage, temperature, time, Ta2O5 thickness, and various prebond glass treatments. Flat wafers without contact grids were used to study the basic effects for bonding to semiconductor surfaces typical of solar cells. Solar cells with three different grid patterns were used to determine additional requirements caused by the raised metallic contacts.

Silicon-graphene conductive photodetector with ultra-high responsivity

PubMed Central

Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

2017-01-01

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononov, N. N., E-mail: nnk@kapella.gpi.ru; Dorofeev, S. G.; Ishchenko, A. A.

2011-08-15

Dielectric properties of thin films precipitated on solid substrates from colloidal solutions containing silicon nanoparticles (average diameter is 10 nm) are studied by optical ellipsometry and impedance-spectroscopy. In the optical region, the values of real {epsilon} Prime and imaginary {epsilon} Double-Prime components of the complex permittivity {epsilon} vary within 2.1-1.1 and 0.25-0.75, respectively. These values are significantly lower than those of crystalline silicon. Using numerical simulation within the Bruggeman effective medium approximation, we show that the experimental {epsilon} Prime and {epsilon} Double-Prime spectra can be explained with good accuracy, assuming that the silicon film is a porous medium consisting ofmore » silicon monoxide (SiO) and air voids at a void ratio of 0.5. Such behavior of films is mainly caused by the effect of outer shells of silicon nanoparticles interacting with atmospheric oxygen on their dielectric properties. In the frequency range of 10-10{sup 6} Hz, the experimentally measured {epsilon} Prime and {epsilon} Double-Prime spectra of thin nanoscale silicon films are well approximated by the semi-empirical Cole-Cole dielectric dispersion law with the term related to free electric charges. The experimentally determined power-law frequency dependence of the ac conductivity means that the electrical transport in films is controlled by electric charge hopping through localized states in the unordered medium of outer shells of silicon nanoparticles composing films. It is found that the film conductivity at frequencies of {<=}2 Multiplication-Sign 10{sup 2} Hz is controlled by proton transport through Si-OH groups on the silicon nanoparticle surface.« less

Size dependence of nanoscale wear of silicon carbide

Treesearch

Chaiyapat Tangpatjaroen; David Grierson; Steve Shannon; Joseph E. Jakes; Izabela Szlufarska

2017-01-01

Nanoscale, single-asperity wear of single-crystal silicon carbide (sc- SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native...

N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

NASA Astrophysics Data System (ADS)

Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

2017-06-01

N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

Innovative Processing of Composites for Ultra-High Temperature Applications. Book 3

DTIC Science & Technology

1993-11-01

SiC Samples Prepared with Four Preceramic Polymer Infiltration / Pyrolysis (at 15750C) Cycles Figure 21 Scanning Electron...Micrograph of Large Pores near the Surface of Siliconized SIC Sample with Four Preceramic Polymer Infiltration / Pyrolysis (at 1575*C) Cycles II...In order to achieve dense, bulk composites with maximum SiC /Si ratio, two infiltration / pyrolysis cycles were used. S (4) After siliconization,

High-energy asymmetric supercapacitors based on free-standing hierarchical Co-Mo-S nanosheets with enhanced cycling stability.

PubMed

Balamurugan, Jayaraman; Li, Chao; Peera, Shaik Gouse; Kim, Nam Hoon; Lee, Joong Hee

2017-09-21

Layered transition metal sulfides (TMS) are emerging as advanced materials for energy storage and conversion applications. In this work, we report a facile and cost-effective anion exchange technique to fabricate a layered, multifaceted, free standing, ultra-thin ternary cobalt molybdenum sulfide nanosheet (Co-Mo-S NS) architecture grown on a 3D porous Ni foam substrate. The unique Co-Mo layered double hydroxides are first synthesized as precursors and consequently transformed into ultra-thin Co-Mo-S NS. When employed as an electrode for supercapacitors, the Co-Mo-S NS delivered an ultra-high specific capacitance of 2343 F g -1 at a current density of 1 mA cm -2 with tremendous rate capability and extraordinary cycling performance (96.6% capacitance retention after 20 000 cycles). Furthermore, assembled Co-Mo-S/nitrogen doped graphene nanosheets (NGNS) in an asymmetric supercapacitor (ASC) device delivered an excellent energy density of 89.6 Wh kg -1 , an amazing power density of 20.07 kW kg -1 , and superior cycling performance (86.8% capacitance retention after 50 000 cycles). Such exceptional electrochemical performance of Co-Mo-S NS is ascribed to the good electrical contact with the 3D Ni foam, ultra-high contact area with the electrolyte, and enhanced architectural softening during the charging/discharging process. It is expected that the fabricated, unique, ultra-thin Co-Mo-S NS have great potential for future energy storage devices.

Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

PubMed Central

2013-01-01

We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution. PMID:23557325

Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

PubMed

Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

2016-02-02

Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

Wear resistant pavement study.

DOT National Transportation Integrated Search

2009-01-01

This report documents the construction of three special pavement test sections on I-90 east of Spokane, Washington. The test sections included ultra-thin and thin whitetopping, Modified Class D open graded asphalt concrete, and micro/macro surfacing ...

Characterization of the punching shear capacity of thin ultra-high performance concrete slabs.

DOT National Transportation Integrated Search

2005-01-01

Ultra-high performance concrete (UHPC) is a relatively new type of concrete that exhibits mechanical properties that are far superior to those of conventional concrete and in some cases rival those of steel. The main characteristics that distinguish ...

[Design and Implementation of Image Interpolation and Color Correction for Ultra-thin Electronic Endoscope on FPGA].

PubMed

Luo, Qiang; Yan, Zhuangzhi; Gu, Dongxing; Cao, Lei

This paper proposed an image interpolation algorithm based on bilinear interpolation and a color correction algorithm based on polynomial regression on FPGA, which focused on the limited number of imaging pixels and color distortion of the ultra-thin electronic endoscope. Simulation experiment results showed that the proposed algorithm realized the real-time display of 1280 x 720@60Hz HD video, and using the X-rite color checker as standard colors, the average color difference was reduced about 30% comparing with that before color correction.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE PAGES

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel; ...

2017-11-16

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Two-dimensional ultra-thin SiO(x) (0 < x < 2) nanosheets with long-term cycling stability as lithium ion battery anodes.

PubMed

Sun, Lin; Su, Tingting; Xu, Lei; Liu, Meipin; Du, Hong-Bin

2016-03-21

Ultra-thin SiO(x) (0 < x < 2) nanosheets were obtained via a convenient solvothermal route from a Zintl compound CaSi2. After carbon coating, the SiOx@C nanosheet anodes exhibit high capacity, good rate and superior cycling performance for high-capacity lithium ion battery applications. The specific capacity can be maintained as high as 760 mA h g(-1) with almost no capacity decay after 400 cycles at a current density of 0.5 A g(-1).

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-07-27

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

Thin film transistors on plastic substrates with reflective coatings for radiation protection

DOEpatents

Wolfe, Jesse D.; Theiss, Steven D.; Carey, Paul G.; Smith, Patrick M.; Wickboldt, Paul

2003-11-04

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Thin film transistors on plastic substrates with reflective coatings for radiation protection

DOEpatents

Wolfe, Jesse D [Fairfield, CA; Theiss, Steven D [Woodbury, MN; Carey, Paul G [Mountain View, CA; Smith, Patrick M [San Ramon, CA; Wickbold, Paul [Walnut Creek, CA

2006-09-26

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

A new lightweight solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C.

1976-01-01

Highly reproducible, very thin (40-80 microns thick) silicon solar cells are examined. These cells are the product of silicon thinning techniques that produce very flexible, resilient slices as compared to other techniques. Measurements on solar cells 2 cm by 2 cm by 50 microns thick producing 60 mW or more at AM0 are described. These cells have fine-line metallizations, tantalum oxide antireflection coatings and back-surface aluminum alloy.

Formation of thin-film resistors on silicon substrates

DOEpatents

Schnable, George L.; Wu, Chung P.

1988-11-01

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparentmore » passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.« less

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

1988-01-01

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

PubMed

Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

2016-02-07

We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

DEPFET detectors for future electron-positron colliders

NASA Astrophysics Data System (ADS)

Marinas, C.

2015-11-01

The DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstanding vertex reconstruction at future electron-positron collider experiments. A DEPFET sensor, by the integration of a field effect transistor on a fully depleted silicon bulk, provides simultaneous position sensitive detector capabilities and in pixel amplification. The characterization of the latest DEPFET prototypes has proven that a adequate signal-to-noise ratio and excellent single point resolution can be achieved for a sensor thickness of 50 micrometers. The close to final auxiliary ASICs have been produced and found to operate a DEPFET pixel detector of the latest generation with the required read-out speed. A complete detector concept is being developed for the Belle II experiment at the new Japanese super flavor factory. DEPFET is not only the technology of choice for the Belle II vertex detector, but also a prime candidate for the ILC. Therefore, in this contribution, the status of DEPFET R&D project is reviewed in the light of the requirements of the vertex detector at a future electron-positron collider.

Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

NASA Astrophysics Data System (ADS)

He, Jian; Li, Wei; Xu, Rui; Qi, Kang-Cheng; Jiang, Ya-Dong

2011-12-01

The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Turning the Moon into a Solar Photovoltaic Paradise

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Alemu, Andenet; Williams, Lawrence; Nakamura, Takashi; Sibille, Laurent; Curren, Peter

2006-01-01

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and insulators), and preliminary attempts in the fabrication of thin film (silicon/II-VI) photovoltaic materials on lunar regolith glass substrates. A conceptual design for a solar powered robotic rover capable of fabricating solar cells directly on the lunar surface is provided. Technical challenges in the development of such a facility and strategies to alleviate perceived difficulties are discussed.

High Resolution X-Ray Micro-CT of Ultra-Thin Wall Space Components

NASA Technical Reports Server (NTRS)

Roth, Don J.; Rauser, R. W.; Bowman, Randy R.; Bonacuse, Peter; Martin, Richard E.; Locci, I. E.; Kelley, M.

2012-01-01

A high resolution micro-CT system has been assembled and is being used to provide optimal characterization for ultra-thin wall space components. The Glenn Research Center NDE Sciences Team, using this CT system, has assumed the role of inspection vendor for the Advanced Stirling Convertor (ASC) project at NASA. This article will discuss many aspects of the development of the CT scanning for this type of component, including CT system overview; inspection requirements; process development, software utilized and developed to visualize, process, and analyze results; calibration sample development; results on actual samples; correlation with optical/SEM characterization; CT modeling; and development of automatic flaw recognition software. Keywords: Nondestructive Evaluation, NDE, Computed Tomography, Imaging, X-ray, Metallic Components, Thin Wall Inspection

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

NASA Astrophysics Data System (ADS)

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

PubMed Central

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

Amorphous silicon ionizing particle detectors

DOEpatents

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Electrochemical method for defect delineation in silicon-on-insulator wafers

DOEpatents

Guilinger, Terry R.; Jones, Howland D. T.; Kelly, Michael J.; Medernach, John W.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

An electrochemical method for defect delineation in thin-film SOI or SOS wafers in which a surface of a silicon wafer is electrically connected so as to control the voltage of the surface within a specified range, the silicon wafer is then contacted with an electrolyte, and, after removing the electrolyte, defects and metal contamination in the silicon wafer are identified.

Optical filters for linearly polarized light using sculptured nematic thin flim of TiO2

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Wali, Faiz; Rehman, Zia ur

2018-05-01

A study of optical filters using sculptured nematic thin films is presented in this article. A central 90◦ twist-defect between two sculptured nematic thin films (SNTFs) sections transmit light of same polarization state and reflect other in the spectral Bragg regime. The SNTFs reflect light of both linearly polarized states in the Bragg regime if the amplitude of modulation of vapor incident angle is increased. A twist-defect in a tilt-modulated sculptured nematic thin films as a result produces bandpass or ultra-narrow bandpass filter depending upon the thickness of the SNTFs. However, both the bandpass or/and ultra-narrow bandpass filters can make polarization-insensitive Bragg mirrors by the appropriate modulation of the tilted 2D nanostructures of a given sculptured nematic thin films. Moreover, it is also observed that the sculptured nematic thin films are very tolerant of the structural defects if the amplitude of modulating vapor incident angle of the structural nano-materials is sufficiently large. Similarly, we observed the affect of incident angles on Bragg filters.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.

PubMed

Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H

2016-06-08

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms.

Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

NASA Astrophysics Data System (ADS)

Chao, Tsu-An

A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

Single crystal functional oxides on silicon

PubMed Central

Bakaul, Saidur Rahman; Serrao, Claudy Rayan; Lee, Michelle; Yeung, Chun Wing; Sarker, Asis; Hsu, Shang-Lin; Yadav, Ajay Kumar; Dedon, Liv; You, Long; Khan, Asif Islam; Clarkson, James David; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2016-01-01

Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon. PMID:26853112

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

PubMed Central

Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

2012-01-01

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only. Introduction Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested. Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10. The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only. PMID:22805108

Ultra-high power capabilities in amorphous FePO4 thin films

NASA Astrophysics Data System (ADS)

Gandrud, Knut B.; Nilsen, Ola; Fjellvåg, Helmer

2016-02-01

Record breaking electrochemical properties of FePO4 have been found through investigation of the thickness dependent electrochemical properties of amorphous thin film electrodes. Atomic layer deposition was used for production of thin films of amorphous FePO4 with highly accurate thickness and topography. Electrochemical characterization of these thin film electrodes revealed that the thinner electrodes behave in a pseudocapacitive manner even at high rates of Li+ de/intercalation, which enabled specific powers above 1 MW kg-1 FePO4 to be obtained with minimal capacity loss. In addition, a self-enhancing kinetic effect was observed during cycling enabling more than 10,000 cycles at current rates approaching that of a supercapacitor (11s charge/discharge). The current findings may open for construction of ultra-high power battery electrodes that combines the energy density of batteries with the power capabilities of supercapacitors.

Conformal chemically resistant coatings for microflow devices

DOEpatents

Folta, James A.; Zdeblick, Mark

2003-05-13

A process for coating the inside surfaces of silicon microflow devices, such as electrophoresis microchannels, with a low-stress, conformal (uniform) silicon nitride film which has the ability to uniformly coat deeply-recessed cavities with, for example, aspect ratios of up to 40:1 or higher. The silicon nitride coating allows extended exposure to caustic solutions. The coating enables a microflow device fabricated in silicon to be resistant to all classes of chemicals: acids, bases, and solvents. The process involves low-pressure (vacuum) chemical vapor deposition. The ultra-low-stress silicon nitride deposition process allows 1-2 .mu.m thick films without cracks, and so enables extended chemical protection of a silicon microflow device against caustics for up to 1 year. Tests have demonstrated the resistance of the films to caustic solutions at both ambient and elevated temperatures to 65.degree. C.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment.

PubMed

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-15

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (10 19 cm -3 ) are distributed in the initial state, which exist in the forms of Si 2 N≡Si·, SiO 2 ≡Si·, O 3 ≡Si·, and N 3 ≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H + and O 2- . Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

NASA Astrophysics Data System (ADS)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Ultrathin Silicon Sheet in the Management of Unilateral Post-traumatic Temporo-Mandibuar Joint Ankylosis in Children: A Good Alternative to Conventional Techniques.

PubMed

Aggarwal, Sushil Kumar; Ankur, Bhatnagar; Jain, R K

2015-09-01

We have described a new technique of using ultra-thin silicon sheet (0.2 mm) between two transected bony ends for temporo-mandibular joint (TMJ) ankylosis in children with advantages of short operative time, minimal foreign material insertion and faster recovery time post-operatively which makes our technique a good alternative to conventional techniques. Our study is a non-randomized prospective study conducted on 10 children aged between 4 and 15 years who presented to our tertiary care institute with severe trismus after traumatic injury and were willing to undergo this new technique. The main outcome measure taken into consideration was difference between pre-operative, intra-operative (on table) and post-operative mouth opening (minimum 2 years follow-up). The pre-operative mouth opening in our cases varied from 1 to 5 mm. The intra-operative mouth opening achieved ranged from 2.8 to 3.2 cm. The mouth opening was about more than 2.7 cm in all our cases at 2 years of follow-up. Our technique is a good alternative to conventional techniques used for TMJ ankylosis in children but few more randomized controlled trials are required to assess its effectiveness in comparison to conventional techniques and for universal adoption of this technique.

Low cost silicon-on-ceramic photovoltaic solar cells

NASA Technical Reports Server (NTRS)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Guided Acoustic and Optical Waves in Silicon-on-Insulator for Brillouin Scattering and Optomechanics

DTIC Science & Technology

2016-08-01

APL PHOTONICS 1, 071301 (2016) Guided acoustic and optical waves in silicon-on- insulator for Brillouin scattering and optomechanics Christopher J...is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin...mechanism on which to base on-chip nonlinear optical devices compatible with a rapidly growing silicon photonics toolbox.3–9 While silicon on insulator

High-energy ultra-short pulse thin-disk lasers: new developments and applications

NASA Astrophysics Data System (ADS)

Michel, Knut; Klingebiel, Sandro; Schultze, Marcel; Tesseit, Catherine Y.; Bessing, Robert; Häfner, Matthias; Prinz, Stefan; Sutter, Dirk; Metzger, Thomas

2016-03-01

We report on the latest developments at TRUMPF Scientific Lasers in the field of ultra-short pulse lasers with highest output energies and powers. All systems are based on the mature and industrialized thin-disk technology of TRUMPF. Thin Yb:YAG disks provide a reliable and efficient solution for power and energy scaling to Joule- and kW-class picosecond laser systems. Due to its efficient one dimensional heat removal, the thin-disk exhibits low distortions and thermal lensing even when pumped under extremely high pump power densities of 10kW/cm². Currently TRUMPF Scientific Lasers develops regenerative amplifiers with highest average powers, optical parametric amplifiers and synchronization schemes. The first few-ps kHz multi-mJ thin-disk regenerative amplifier based on the TRUMPF thindisk technology was developed at the LMU Munich in 20081. Since the average power and energy have continuously been increased, reaching more than 300W (10kHz repetition rate) and 200mJ (1kHz repetition rate) at pulse durations below 2ps. First experiments have shown that the current thin-disk technology supports ultra-short pulse laser solutions >1kW of average power. Based on few-picosecond thin-disk regenerative amplifiers few-cycle optical parametric chirped pulse amplifiers (OPCPA) can be realized. These systems have proven to be the only method for scaling few-cycle pulses to the multi-mJ energy level. OPA based few-cycle systems will allow for many applications such as attosecond spectroscopy, THz spectroscopy and imaging, laser wake field acceleration, table-top few-fs accelerators and laser-driven coherent X-ray undulator sources. Furthermore, high-energy picosecond sources can directly be used for a variety of applications such as X-ray generation or in atmospheric research.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).