All-optical switching in silicon-on-insulator photonic wire nano-cavities.

PubMed

Belotti, Michele; Galli, Matteo; Gerace, Dario; Andreani, Lucio Claudio; Guizzetti, Giorgio; Md Zain, Ahmad R; Johnson, Nigel P; Sorel, Marc; De La Rue, Richard M

2010-01-18

We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

Development of Ultra-Fast Silicon Detectors for 4D tracking

NASA Astrophysics Data System (ADS)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

A compact thermo-optical multimode-interference silicon-based 1 × 4 nano-photonic switch.

PubMed

Zhou, Haifeng; Song, Junfeng; Chee, Edward K S; Li, Chao; Zhang, Huijuan; Lo, Guoqiang

2013-09-09

An ultra-compact multimode-interference (MMI)-based 1 × 4 nano-photonic switch is demonstrated by employing silicon thermo-optical effect on SOI platform. The device performance is systematically characterized by comprehensively investigating the constituent building blocks, including 1 × 4 power splitter, 4 × 4 MMI coupler and groove-isolated thermo-optical heaters. An instructive model is established to statistically estimate the required power consumption and investigate the influence of the power imbalance of the 4 × 4 MMI coupler on the switching performance. At the designed wavelength of 1550 nm, the average insertion loss of different switching states is 1.7 dB, and the transmission imbalance is 1.05 dB. The worst extinction ratio and crosstalk of all the output ports reach 11.48 dB and -11.38 dB, respectively.

Silicon Modulators, Switches and Sub-systems for Optical Interconnect

NASA Astrophysics Data System (ADS)

Li, Qi

Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

Temperature dependence of the response of ultra fast silicon detectors

NASA Astrophysics Data System (ADS)

Mulargia, R.; Arcidiacono, R.; Bellora, A.; Boscardin, M.; Cartiglia, N.; Cenna, F.; Cirio, R.; Dalla Betta, G. F.; Durando, S.; Fadavi, A.; Ferrero, M.; Galloway, Z.; Gruey, B.; Freeman, P.; Kramberger, G.; Mandic, I.; Monaco, V.; Obertino, M.; Pancheri, L.; Paternoster, G.; Ravera, F.; Sacchi, R.; Sadrozinski, H. F. W.; Seiden, A.; Sola, V.; Spencer, N.; Staiano, A.; Wilder, M.; Woods, N.; Zatserklyaniy, A.

2016-12-01

The Ultra Fast Silicon Detectors (UFSD) are a novel concept of silicon detectors based on the Low Gain Avalanche Diode (LGAD) technology, which are able to obtain time resolution of the order of few tens of picoseconds. First prototypes with different geometries (pads/pixels/strips), thickness (300 and 50 μm) and gain (between 5 and 20) have been recently designed and manufactured by CNM (Centro Nacional de Microelectrónica, Barcelona) and FBK (Fondazione Bruno Kessler, Trento). Several measurements on these devices have been performed in laboratory and in beam test and a dependence of the gain on the temperature has been observed. Some of the first measurements will be shown (leakage current, breakdown voltage, gain and time resolution on the 300 μm from FBK and gain on the 50 μm-thick sensor from CNM) and a comparison with the theoretically predicted trend will be discussed.

Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Scalloping minimization in deep Si etching on Unaxis DSE tools

NASA Astrophysics Data System (ADS)

Lai, Shouliang; Johnson, Dave J.; Westerman, Russ J.; Nolan, John J.; Purser, David; Devre, Mike

2003-01-01

Sidewall smoothness is often a critical requirement for many MEMS devices, such as microfludic devices, chemical, biological and optical transducers, while fast silicon etch rate is another. For such applications, the time division multiplex (TDM) etch processes, so-called "Bosch" processes are widely employed. However, in the conventional TDM processes, rough sidewalls result due to scallop formation. To date, the amplitude of the scalloping has been directly linked to the silicon etch rate. At Unaxis USA Inc., we have developed a proprietary fast gas switching technique that is effective for scalloping minimization in deep silicon etching processes. In this technique, process cycle times can be reduced from several seconds to as little as a fraction of second. Scallop amplitudes can be reduced with shorter process cycles. More importantly, as the scallop amplitude is progressively reduced, the silicon etch rate can be maintained relatively constant at high values. An optimized experiment has shown that at etch rate in excess of 7 μm/min, scallops with length of 116 nm and depth of 35 nm were obtained. The fast gas switching approach offers an ideal manufacturing solution for MEMS applications where extremely smooth sidewall and fast etch rate are crucial.

Nano-cone resistive memory for ultralow power operation.

PubMed

Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2017-03-24

SiN x -based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.

Hybrid metasurface for ultra-broadband terahertz modulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heyes, Jane E.; Withayachumnankul, Withawat; Grady, Nathaniel K.

2014-11-05

We demonstrate an ultra-broadband free-space terahertz modulator based on a semiconductor-integrated metasurface. The modulator is made of a planar array of metal cut-wires on a silicon-on-sapphire substrate, where the silicon layer functions as photoconductive switches. Without external excitation, the cut-wire array exhibits a Lorentzian resonant response with a transmission passband spanning dc up to the fundamental dipole resonance above 2 THz. Under photoexcitation with 1.55 eV near-infrared light, the silicon regions in the cut-wire gaps become highly conductive, causing a transition of the resonant metasurface to a wire grating with a Drude response. In effect, the low-frequency passband below 2more » THz evolves into a stopband for the incident terahertz waves. Experimental validations confirm a bandwidth of at least 100%, spanning 0.5 to 1.5 THz with -10 dB modulation depth. This modulation depth is far superior to -5 dB achievable from a plain silicon-on-sapphire substrate with effectively 25 times higher pumping energy. The proposed concept of ultra-broadband metasurface modulator can be readily extended to electrically controlled terahertz wave modulation.« less

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xingyu, E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu; Chung, Chi-Jui; Pan, Zeyu

2015-11-30

We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-opticmore » switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.« less

Fast and low power Michelson interferometer thermo-optical switch on SOI.

PubMed

Song, Junfeng; Fang, Q; Tao, S H; Liow, T Y; Yu, M B; Lo, G Q; Kwong, D L

2008-09-29

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.

Research on SOI-based micro-resonator devices

NASA Astrophysics Data System (ADS)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of < 400 ps and crosstalk < -23 dB, and > 10 Gbit/s high speed microring modulators.

Initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds with fast semiconductor switches and energy-releasing elements

NASA Astrophysics Data System (ADS)

Savenkov, G. G.; Kardo-Sysoev, A. F.; Zegrya, A. G.; Os'kin, I. A.; Bragin, V. A.; Zegrya, G. G.

2017-10-01

The first findings concerning the initiation of explosive conversions in energy-saturated nanoporous silicon-based compounds via the electrical explosion of a semiconductor bridge are presented. The obtained results indicate that the energy parameters of an explosive conversion depend on the mass of a combustible agent—namely, nanoporous silicon—and the silicon-doping type.

Silicon-Germanium Fast Packet Switch Developed for Communications Satellites

NASA Technical Reports Server (NTRS)

Quintana, Jorge A.

1999-01-01

Emerging multimedia applications and future satellite systems will require high-speed switching networks to accommodate high data-rate traffic among thousands of potential users. This will require advanced switching devices to enable communication between satellites. The NASA Lewis Research Center has been working closely with industry to develop a state-of-the-art fast packet switch (FPS) to fulfill this requirement. Recently, the Satellite Industry Task Force identified the need for high-capacity onboard processing switching components as one of the "grand challenges" for the satellite industry in the 21st century. In response to this challenge, future generations of onboard processing satellites will require low power and low mass components to enable transmission of services in the 100 gigabit (1011 bits) per second (Gbps) range.

A 10Gbps optical burst switching network incorporating ultra-fast (5ns) wavelength switched tunable laser sources

NASA Astrophysics Data System (ADS)

Ryan, Neil; Todd, Michael; Farrell, Tom; Lavin, Adrian; Rigole, Pierre-Jean; Corbett, Brian; Roycroft, Brendan; Engelstaedter, Jan-Peter

2017-11-01

This paper outlines the development of a prototype optical burst mode switching network based upon a star topology, the ultimate application of which could be as a transparent payload processor onboard satellite repeaters. The network architecture incorporates multiple tunable laser sources, burst mode receivers and a passive optical router (Arrayed Waveguide Grating). Each tunable optical signal should carry >=10Gbps and be capable of wavelength switching in c. 5ns timescales. Two monolithic tunable laser types, based upon different technologies, will be utilised: a Slotted Fabry Perot laser (a Fabry Perot laser with slots added in order to introduce controlled cavity perturbations); and a Modulated Grating Y-Branch Laser (MGY: a widely tunable, multi-section device similar to the DBR laser). While the Slotted Fabry Perot laser is expected to achieve the required switching times, it is an immature technology not yet capable of achieving tunability over 80 ITU channels from a single chip. The MGY device is a more mature technology and has full C-band ITU channel coverage, but is not capable of the required short switching times. Hence, in order to facilitate the integration of this more mature technology into the prototype breadboard with the requisite switching time capabilities, a system of `dual laser' transmitters is being developed to enable data transmission from one MGY laser while the other switches and vice-versa. This work is being performed under ESA contract AO 1-5025/06/NL/PM, Optical Technologies for Ultra - fast Processing.

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

2014-01-01

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn-off), and lower-magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Ultra-high-speed graphene optical modulator design based on tight field confinement in a slot waveguide

NASA Astrophysics Data System (ADS)

Kovacevic, Goran; Phare, Christopher; Set, Sze Y.; Lipson, Michal; Yamashita, Shinji

2018-06-01

We present a design of an ultra-fast in-line graphene optical modulator on a silicon waveguide with a bandwidth exceeding 100 GHz, very small power consumption below 15 fJ/bit, and insertion loss of 1.5 dB. This is achieved by utilizing the transverse-electric-mode silicon slot to tailor the overlap of graphene electrodes, thus significantly reducing the capacitance of the device while maintaining a low insertion loss and using conservative estimates of the graphene resistance. Our design is substantiated by comprehensive finite-element-method simulations and RC circuit characterization, as well as fabrication feasibility discussion.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

DOE PAGES

Cartiglia, N.; Staiano, A.; Sola, V.; ...

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

Cartiglia, N.; Staiano, A.; Sola, V.; Arcidiacono, R.; Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R.; Bellora, A.; Durando, S.; Mandurrino, M.; Minafra, N.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E.; Grabas, H.; Gruey, B.; Labitan, C. A.; Losakul, R.; Luce, Z.; McKinney-Martinez, F.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, E.; Wilder, M.; Woods, N.; Zatserklyaniy, A.; Pellegrini, G.; Hidalgo, S.; Carulla, M.; Flores, D.; Merlos, A.; Quirion, D.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Ultra-compact 32 × 32 strictly-non-blocking Si-wire optical switch with fan-out LGA interposer.

PubMed

Tanizawa, Ken; Suzuki, Keijiro; Toyama, Munehiro; Ohtsuka, Minoru; Yokoyama, Nobuyuki; Matsumaro, Kazuyuki; Seki, Miyoshi; Koshino, Keiji; Sugaya, Toshio; Suda, Satoshi; Cong, Guangwei; Kimura, Toshio; Ikeda, Kazuhiro; Namiki, Shu; Kawashima, Hitoshi

2015-06-29

We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.

MCT/MOSFET Switch

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Fast pressure-sensor system

NASA Technical Reports Server (NTRS)

Gross, C.

1976-01-01

Miniature silicon-diaphragm sensors and signal multiplexer are mounted to ganged zero-operate-calibrate pressure selector switches. Device allows in-situ calibration, can be computer controlled, and measures at approximately 10,000 readings per second.

High-contrast and fast electrochromic switching enabled by plasmonics

PubMed Central

Xu, Ting; Walter, Erich C.; Agrawal, Amit; Bohn, Christopher; Velmurugan, Jeyavel; Zhu, Wenqi; Lezec, Henri J.; Talin, A. Alec

2016-01-01

With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thin electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. We further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer. PMID:26814453

High-contrast and fast electrochromic switching enabled by plasmonics

DOE PAGES

Xu, Ting; Walter, Erich C.; Agrawal, Amit; ...

2016-01-27

With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thinmore » electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. In conclusion, we further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer.« less

High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes.

PubMed

Rosa, Álvaro; Gutiérrez, Ana; Brimont, Antoine; Griol, Amadeu; Sanchis, Pablo

2016-01-11

Optical switches based on tunable multimode interference (MMI) couplers can simultaneously reduce the footprint and increase the tolerance against fabrication deviations. Here, a compact 2x2 silicon switch based on a thermo-optically tunable MMI structure with a footprint of only 0.005 mm(2) is proposed and demonstrated. The MMI structure has been optimized using a silica trench acting as a thermal isolator without introducing any substantial loss penalty or crosstalk degradation. Furthermore, the electrodes performance have significantly been improved via engineering the heater geometry and using two metallization steps. Thereby, a drastic power consumption reduction of around 90% has been demonstrated yielding to values as low as 24.9 mW. Furthermore, very fast switching times of only 1.19 µs have also been achieved.

Photon-trapping micro/nanostructures for high linearity in ultra-fast photodiodes

NASA Astrophysics Data System (ADS)

Cansizoglu, Hilal; Gao, Yang; Perez, Cesar Bartolo; Ghandiparsi, Soroush; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

2017-08-01

Photodetectors (PDs) in datacom and computer networks where the link length is up to 300 m, need to handle higher than typical input power used in other communication links. Also, to reduce power consumption due to equalization at high speed (>25Gb/s), the datacom links will use PAM-4 signaling instead of NRZ with stringent receiver linearity requirements. Si PDs with photon-trapping micro/nanostructures are shown to have high linearity in output current verses input optical power. Though there is less silicon material due to the holes, the micro-/nanostructured holes collectively reradiate the light to an in-plane direction of the PD surface and can avoid current crowding in the PD. Consequently, the photocurrent per unit volume remains at a low level contributing to high linearity in the photocurrent. We present the effect of design and lattice patterns of micro/nanostructures on the linearity of ultra-fast silicon PDs designed for high speed multi gigabit data networks.

Ultra high voltage MOS controlled 4H-SiC power switching devices

NASA Astrophysics Data System (ADS)

Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

2015-08-01

Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Active plasmonics in WDM traffic switching applications

NASA Astrophysics Data System (ADS)

Papaioannou, Sotirios; Kalavrouziotis, Dimitrios; Vyrsokinos, Konstantinos; Weeber, Jean-Claude; Hassan, Karim; Markey, Laurent; Dereux, Alain; Kumar, Ashwani; Bozhevolnyi, Sergey I.; Baus, Matthias; Tekin, Tolga; Apostolopoulos, Dimitrios; Avramopoulos, Hercules; Pleros, Nikos

2012-09-01

With metal stripes being intrinsic components of plasmonic waveguides, plasmonics provides a ``naturally'' energy-efficient platform for merging broadband optical links with intelligent electronic processing, instigating a great promise for low-power and small-footprint active functional circuitry. The first active Dielectric-Loaded Surface Plasmon Polariton (DLSPP) thermo-optic (TO) switches with successful performance in single-channel 10 Gb/s data traffic environments have led the inroad towards bringing low-power active plasmonics in practical traffic applications. In this article, we introduce active plasmonics into Wavelength Division Multiplexed (WDM) switching applications, using the smallest TO DLSPP-based Mach-Zehnder interferometric switch reported so far and showing its successful performance in 4×10 Gb/s low-power and fast switching operation. The demonstration of the WDM-enabling characteristics of active plasmonic circuits with an ultra-low power × response time product represents a crucial milestone in the development of active plasmonics towards real telecom and datacom applications, where low-energy and fast TO operation with small-size circuitry is targeted.

A strong electro-optically active lead-free ferroelectric integrated on silicon

NASA Astrophysics Data System (ADS)

Abel, Stefan; Stöferle, Thilo; Marchiori, Chiara; Rossel, Christophe; Rossell, Marta D.; Erni, Rolf; Caimi, Daniele; Sousa, Marilyne; Chelnokov, Alexei; Offrein, Bert J.; Fompeyrine, Jean

2013-04-01

The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a novel way to seamlessly connect the electrical and optical domain. Of all oxides, barium titanate exhibits one of the largest linear electro-optical coefficients, which has however not yet been explored for thin films on silicon. Here we report on the electro-optical properties of thin barium titanate films epitaxially grown on silicon substrates. We extract a large effective Pockels coefficient of reff=148 pm V-1, which is five times larger than in the current standard material for electro-optical devices, lithium niobate. We also reveal the tensor nature of the electro-optical properties, as necessary for properly designing future devices, and furthermore unambiguously demonstrate the presence of ferroelectricity. The integration of electro-optical active films on silicon could pave the way towards power-efficient, ultra-compact integrated devices, such as modulators, tuning elements and bistable switches.

Ultra-High Capacity Networking Enabled By Optical Technologies

DTIC Science & Technology

2003-08-01

interface that raises an interrupt regardless of what the kernel may be doing. Piglet also uses fast wakeup signals to optimise scheduling in certain...executed which switches context driectly to the now-runnable application i.e., without invoking the scheduler . Since the fast wakeup handler does not...and scheduling , the first one has been built and tested. 10 Gb/s data patterns have been generated with this board. A systems experiment has

Fast switching wideband rectifying circuit for future RF energy harvesting

NASA Astrophysics Data System (ADS)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

Ultrafast Power Processor for Smart Grid Power Module Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

MAITRA, ARINDAM; LITWIN, RAY; lai, Jason

This project’s goal was to increase the switching speed and decrease the losses of the power semiconductor devices and power switch modules necessary to enable Smart Grid energy flow and control equipment such as the Ultra-Fast Power Processor. The primary focus of this project involves exploiting the new silicon-based Super-GTO (SGTO) technology and build on prototype modules already being developed. The prototype super gate-turn-off thyristor (SGTO) has been tested fully under continuously conducting and double-pulse hard-switching conditions for conduction and switching characteristics evaluation. The conduction voltage drop measurement results indicate that SGTO has excellent conduction characteristics despite inconsistency among somemore » prototype devices. Tests were conducted with two conditions: (1) fixed gate voltage and varying anode current condition, and (2) fixed anode current and varying gate voltage condition. The conduction voltage drop is relatively a constant under different gate voltage condition. In terms of voltage drop as a function of the load current, there is a fixed voltage drop about 0.5V under zero current condition, and then the voltage drop is linearly increased with the current. For a 5-kV voltage blocking device that may operate under 2.5-kV condition, the projected voltage drop is less than 2.5 V under 50-A condition, or 0.1%. If the device is adopted in a converter operating under soft-switching condition, then the converter can achieve an ultrahigh efficiency, typically above 99%. The two-pulse switching test results indicate that SGTO switching speed is very fast. The switching loss is relatively low as compared to that of the insulated-gate-bipolar-transistors (IGBTs). A special phenomenon needs to be noted is such a fast switching speed for the high-voltage switching tends to create an unexpected Cdv/dt current, which reduces the turn-on loss because the dv/dt is negative and increases the turn-off loss because the dv/dt is positive. As a result, the turn-on loss at low current is quite low, and the turn-off loss at low current is relatively high. The phenomenon was verified with junction capacitance measurement along with the dv/dt calculation. Under 2-kV test condition, the turn-on and turn-off losses at 25-A is about 3 and 9 mJ, respectively. As compared to a 4.5-kV, 60-A rated IGBT, which has turn-on and turn-off losses about 25 and 20 mJ under similar test condition, the SGTO shows significant switching loss reduction. The switching loss depends on the switching frequency, but under hard-switching condition, the SGTO is favored to the IGBT device. The only concern is during low current turn-on condition, there is a voltage bump that can translate to significant power loss and associated heat. The reason for such a current bump is not known from this study. It is necessary that the device manufacturer perform though test and provide the answer so the user can properly apply SGTO in pulse-width-modulated (PWM) converter and inverter applications.« less

Electrochromic conductive polymer fuses for hybrid organic/inorganic semiconductor memories

NASA Astrophysics Data System (ADS)

Möller, Sven; Forrest, Stephen R.; Perlov, Craig; Jackson, Warren; Taussig, Carl

2003-12-01

We demonstrate a nonvolatile, write-once-read-many-times (WORM) memory device employing a hybrid organic/inorganic semiconductor architecture consisting of thin film p-i-n silicon diode on a stainless steel substrate integrated in series with a conductive polymer fuse. The nonlinearity of the silicon diodes enables a passive matrix memory architecture, while the conductive polyethylenedioxythiophene:polystyrene sulfonic acid polymer serves as a reliable switch with fuse-like behavior for data storage. The polymer can be switched at ˜2 μs, resulting in a permanent decrease of conductivity of the memory pixel by up to a factor of 103. The switching mechanism is primarily due to a current and thermally dependent redox reaction in the polymer, limited by the double injection of both holes and electrons. The switched device performance does not degrade after many thousand read cycles in ambient at room temperature. Our results suggest that low cost, organic/inorganic WORM memories are feasible for light weight, high density, robust, and fast archival storage applications.

500 GHz Optical Sampler for Advancing Nonlinear Processing with Generalized Optical Pulses

DTIC Science & Technology

2015-10-19

that obtainable with electronics. Wide bandwidth  pulses have a variety of applications such as in microwave signal processing,  ultra ‐ wideband ...fiber‐based entangled photon source, the first  ultra ‐fast low‐loss single photon switch, and the first  telecom‐band linear optics C‐Not gate. We

Low-threshold ultrafast all-optical switch implemented with metallic nanoshells in the photonic crystal ring resonator

NASA Astrophysics Data System (ADS)

Ghadrdan, Majid; Mansouri-Birjandi, Mohammad Ali

2017-11-01

An all-optical switch based on nonlinear photonic crystal ring resonator embedded with silica dielectric surrounded by silver nanoshell (NS) inside the ring resonator has been introduced and analyzed in this article. We considered silica with radius of 10 nm and silver with radius of 16 nm as core and shell, respectively. By placing NSs inside the photonic crystal ring resonator, we succeeded in reducing the threshold power to 12.8 mW/μm2 and the switching time to about 0.4 ps. The results of this research suggest a new technique for reducing switching light intensity. With small size, ultra-fast switching time, and low-threshold power, the structure has the potential to be applied in optical integration circuits and nanoscale optical chips.

Femtosecond pulsed laser processing of electronic materials: Fundamentals and micro/nano-scale applications

NASA Astrophysics Data System (ADS)

Choi, Tae-Youl

Ultra-short pulsed laser radiation has been shown to be effective for precision materials processing and surface micro-modification. One of advantages is the substantial reduction of the heat penetration depth, which leads to minimal lateral damage. Other advantages include non-thermal nature of ablation process, controlled ablation and ideal characteristics for precision micro-structuring. Yet, fundamental questions remain unsolved regarding the nature of melting and ablation mechanisms in femtosecond laser processing of materials. In addition to micro engineering problems, nano-structuring and nano-fabrication are emerging fields that are of particular interest in conjunction with femtosecond laser processing. A comprehensive experimental study as well as theoretical development is presented to address these issues. Ultra-short pulsed laser irradiation was used to crystallize 100 nm amorphous silicon (a-Si) films. The crystallization process was observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images in conjunction with post-processed SEM and AFM mapping of the crystallized structure provide evidence for non-thermal ultra-fast phase transition and subsequent surface-initiated crystallization. Mechanisms of ultra-fast laser-induced ablation on crystalline silicon and copper are investigated by time-resolved pump-and-probe microscopy in normal imaging and shadowgraph arrangements. A one-dimensional model of the energy transport is utilized to predict the carrier temperature and lattice temperature as well as the electron and vapor flux emitted from the surface. The temporal delay between the pump and probe pulses was set by a precision translation stage up to about 500 ps and then extended to the nanosecond regime by an optical fiber assembly. The ejection of material was observed at several picoseconds to tens of nanoseconds after the main (pump) pulse by high-resolution, ultra-fast shadowgraphs. The ultrashort laser pulse accompanied by the pre-pulse induces air breakdown that can be detrimental to materials processing. A time-resolved pump-and-probe experiment provides distinct evidence for the occurrence of an air plasma and air breakdown. This highly nonlinear phenomenon takes place before the commencement of the ablation process, which is traced beyond elapsed time of the order of 10 ps with respect to the ablating pulse. The nonlinear refractive index of the generated air plasma is calculated as a function of electron density. The self-focusing of the main pulse is identified by the third order nonlinear susceptibility. A crystalline silicon sample is subjected to two optically separated ultra-fast laser pulses of full-width-half-maximum (FWHM) duration of about 80 femtoseconds. These pulses are delivered at wavelength, lambda = 800 nm. Femtosecond-resolved imaging pump-and-probe experiments in reflective and Schlieren configurations have been performed to investigate plasma dynamics and shock wave propagation during the sample ablation process. By using a diffractive optical element (DOE) for beam shaping, microchannels were fabricated. A super-long working distance objective lens was used to machine silicon materials in the sub-micrometer scale. As an extension of micro-machining, the finite difference time domain (FDTD) method is used to assess the feasibility of using near-field distribution of laser light. Gold coated films were machined with nano-scale dimensions and characterized with atomic force microscopy (AFM).

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Thermal noise model of antiferromagnetic dynamics: A macroscopic approach

NASA Astrophysics Data System (ADS)

Li, Xilai; Semenov, Yuriy; Kim, Ki Wook

In the search for post-silicon technologies, antiferromagnetic (AFM) spintronics is receiving widespread attention. Due to faster dynamics when compared with its ferromagnetic counterpart, AFM enables ultra-fast magnetization switching and THz oscillations. A crucial factor that affects the stability of antiferromagnetic dynamics is the thermal fluctuation, rarely considered in AFM research. Here, we derive from theory both stochastic dynamic equations for the macroscopic AFM Neel vector (L-vector) and the corresponding Fokker-Plank equation for the L-vector distribution function. For the dynamic equation approach, thermal noise is modeled by a stochastic fluctuating magnetic field that affects the AFM dynamics. The field is correlated within the correlation time and the amplitude is derived from the energy dissipation theory. For the distribution function approach, the inertial behavior of AFM dynamics forces consideration of the generalized space, including both coordinates and velocities. Finally, applying the proposed thermal noise model, we analyze a particular case of L-vector reversal of AFM nanoparticles by voltage controlled perpendicular magnetic anisotropy (PMA) with a tailored pulse width. This work was supported, in part, by SRC/NRI SWAN.

Ultra-low-noise preamplifier for condenser microphones.

PubMed

Starecki, Tomasz

2010-12-01

The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

All-optical negabinary adders using Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Cherri, A. K.

2011-02-01

In contrast to optoelectronics, all-optical adders are proposed where all-optical signals are used to represent the input numbers and the control signals. In addition, the all-optical adders use the negabinary modified signed-digit number representation (an extension of the negabinary number system) to represent the input digits. Further, the ultra-speed of the designed circuits is achieved due to the use of ultra-fast all-optical switching property of the semiconductor optical amplifier and Mach-Zehnder interferometer (SOA-MZI). Furthermore, two-bit per digit binary encoding scheme is employed to represent the trinary values of the negabinary modified signed-digits.

Ultra-fast vapour-liquid-solid synthesis of Si nanowires using ion-beam implanted gallium as catalyst.

PubMed

Hetzel, Martin; Lugstein, Alois; Zeiner, Clemens; Wójcik, Tomasz; Pongratz, Peter; Bertagnolli, Emmerich

2011-09-30

The feasibility of gallium as a catalyst for vapour-liquid-solid (VLS) nanowire (NW) growth deriving from an implantation process in silicon by a focused ion beam (FIB) is investigated. Si(100) substrates are subjected to FIB implantation of gallium ions with various ion fluence rates. NW growth is performed in a hot wall chemical vapour deposition (CVD) reactor at temperatures between 400 and 500 °C with 2% SiH(4)/He as precursor gas. This process results in ultra-fast growth of (112)- and (110)-oriented Si-NWs with a length of several tens of micrometres. Further investigation by transmission electron microscopy indicates the presence of a NW core-shell structure: while the NW core yields crystalline structuring, the shell consists entirely of amorphous material.

How short are ultra short light pulses? (looking back to the mid sixties)

NASA Astrophysics Data System (ADS)

Weber, H. P.; Dändliker, R.

2010-09-01

With the arrival of mode locking for Q-switched lasers to generate ultra short light pulses, a method to measure their expected time duration in the psec range was needed. A novel method, based on an intensity correlation measurement using optical second harmonic generation, was developed. Other reported approaches for the same purpose were critically analysed. Theoretical and subsequent experimental studies lead to surprising new insight into the ultra fast temporal behaviour of broadband laser radiation: Any non mode locked multimode emission of a laser consists of random intensity fluctuations with duration of the total inverse band width of emitted radiation. However, it was shown, that with mode locking isolated ultra short pulses of psec duration can be generated. This article summarizes activities performed in the mid sixties at the University of Berne, Switzerland.

Ga-doped indium oxide nanowire phase change random access memory cells

NASA Astrophysics Data System (ADS)

Jin, Bo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I.; Kim, Hyoung Seop; Meyyappan, M.; Lee, Jeong-Soo

2014-02-01

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In2O3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (˜40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Physical mechanisms of SiN{sub x} layer structuring with ultrafast lasers by direct and confined laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rapp, S., E-mail: rapp@hm.edu; Erlangen Graduate School in Advanced Optical Technologies; Heinrich, G.

2015-03-14

In the production process of silicon microelectronic devices and high efficiency silicon solar cells, local contact openings in thin dielectric layers are required. Instead of photolithography, these openings can be selectively structured with ultra-short laser pulses by confined laser ablation in a fast and efficient lift off production step. Thereby, the ultrafast laser pulse is transmitted by the dielectric layer and absorbed at the substrate surface leading to a selective layer removal in the nanosecond time domain. Thermal damage in the substrate due to absorption is an unwanted side effect. The aim of this work is to obtain a deepermore » understanding of the physical laser-material interaction with the goal of finding a damage-free ablation mechanism. For this, thin silicon nitride (SiN{sub x}) layers on planar silicon (Si) wafers are processed with infrared fs-laser pulses. Two ablation types can be distinguished: The known confined ablation at fluences below 300 mJ/cm{sup 2} and a combined partial confined and partial direct ablation at higher fluences. The partial direct ablation process is caused by nonlinear absorption in the SiN{sub x} layer in the center of the applied Gaussian shaped laser pulses. Pump-probe investigations of the central area show ultra-fast reflectivity changes typical for direct laser ablation. Transmission electron microscopy results demonstrate that the Si surface under the remaining SiN{sub x} island is not damaged by the laser ablation process. At optimized process parameters, the method of direct laser ablation could be a good candidate for damage-free selective structuring of dielectric layers on absorbing substrates.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Fast optical switch having reduced light loss

NASA Technical Reports Server (NTRS)

Nelson, Bruce N. (Inventor); Cooper, Ronald F. (Inventor)

1992-01-01

An electrically controlled optical switch uses an electro-optic crystal of the type having at least one set of fast and slow optical axes. The crystal exhibits electric field induced birefringence such that a plane of polarization oriented along a first direction of a light beam passing through the crystal may be switched to a plane of polarization oriented along a second direction. A beam splitting polarizer means is disposed at one end of the crystal and directs a light beam passing through the crystal whose plane of polarization is oriented along the first direction differently from a light beam having a plane of polarization oriented along the second direction. The electro-optic crystal may be chosen from the crystal classes 43m, 42m, and 23. In a preferred embodiment, the electro-optic crystal is a bismuth germanium oxide crystal or a bismuth silicon oxide crystal. In another embodiment of the invention, polarization control optics are provided which transmit substantially all of the incident light to the electro-optic crystal, substantially reducing the insertion loss of the switch.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Ultra-fast three terminal perpendicular spin-orbit torque MRAM (Presentation Recording)

NASA Astrophysics Data System (ADS)

Boulle, Olivier; Cubukcu, Murat; Hamelin, Claire; Lamard, Nathalie; Buda-Prejbeanu, Liliana; Mikuszeit, Nikolai; Garello, Kevin; Gambardella, Pietro; Langer, Juergen; Ocker, Berthold; Miron, Mihai; Gaudin, Gilles

2015-09-01

The discovery that a current flowing in a heavy metal can exert a torque on a neighboring ferromagnet has opened a new way to manipulate the magnetization at the nanoscale. This "spin orbit torque" (SOT) has been demonstrated in ultrathin magnetic multilayers with structural inversion asymmetry (SIA) and high spin orbit coupling, such as Pt/Co/AlOx multilayers. We have shown that this torque can lead to the magnetization switching of a perpendicularly magnetized nanomagnet by an in-plane current injection. The manipulation of magnetization by SOT has led to a novel concept of magnetic RAM memory, the SOT-MRAM, which combines non volatility, high speed, reliability and large endurance. These features make the SOT-MRAM a good candidate to replace SRAM for non-volatile cache memory application. We will present the proof of concept of a perpendicular SOT-MRAM cell composed of a Ta/FeCoB/MgO/FeCoB magnetic tunnel junction and demonstrate ultra-fast (down to 300 ps) deterministic bipolar magnetization switching. Macrospin and micromagnetic simulations including SOT cannot reproduce the experimental results, which suggests that additional physical mechanisms are at stacks. Our results show that SOT-MRAM is fast, reliable and low power, which is promising for non-volatile cache memory application. We will also discuss recent experiments of magnetization reversal in ultrathin multilayers Pt/Co/AlOx by very short (<200 ps) current pulses. We will show that in this material, the Dzyaloshinskii-Moryia interaction plays a key role in the reversal process.

Ultra fast polymer network blue phase liquid crystals

NASA Astrophysics Data System (ADS)

Hussain, Zakir; Masutani, Akira; Danner, David; Pleis, Frank; Hollfelder, Nadine; Nelles, Gabriele; Kilickiran, Pinar

2011-06-01

Polymer-stabilization of blue phase liquid crystal systems within a host polymer network are reported, which enables ultrafast switching flexible displays. Our newly developed method to stabilize the blue phase in an existing polymer network (e.g., that of a polymer network liquid crystal; PNLC) has shown wide temperature stability and fast response speeds. Systems where the blue phase is stabilized in an already existing polymer network are attractive candidates for ultrafast LCDs. The technology also promises to be applied to flexible PNLC and/or polymer dispersed liquid crystal (PDLC) displays using plastic substrate such as polyethylene terephthalate (PET).

Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy.

PubMed

Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

2015-12-01

In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy.

Multilayer Black Phosphorus Near-Infrared Photodetectors.

PubMed

Hou, Chaojian; Yang, Lijun; Li, Bo; Zhang, Qihan; Li, Yuefeng; Yue, Qiuyang; Wang, Yang; Yang, Zhan; Dong, Lixin

2018-05-23

Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer thickness. In fact, multilayer BP nanoflakes with large layer thickness have greater potential from the fabrication viewpoint as well as due to the physical properties than single or few layer ones. In this report, the thickness-dependence of the intrinsic property of BP photodetectors in the dark was initially investigated. Then the photo-response performance (including responsivity, photo-gain, photo-switching time, noise equivalent power, and specific detectivity) of BP photodetectors with relative thicker thickness was explored under a near-infrared laser beam ( λ IR = 830 nm). Our experimental results reveal the impact of BP's thickness on the current intensity of the channel and show degenerated p-type BP is beneficial for larger current intensity. More importantly, the photo-response of our thicker BP photodetectors exhibited a larger responsivity up to 2.42 A/W than the few-layer ones and a fast response photo-switching speed (response time is ~2.5 ms) comparable to thinner BP nanoflakes was obtained, indicating BP nanoflakes with larger layer thickness are also promising for application for ultra-fast and ultra-high near-infrared photodetectors.

Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yuandong; Liu, Kewei; Zhu, Yu

Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI) formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D), compared with bulkymore » silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. Finally, in this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs) applications is listed and discussed.« less

Recent Progress in Synthesis and Application of Low-Dimensional Silicon Based Anode Material for Lithium Ion Battery

DOE PAGES

Sun, Yuandong; Liu, Kewei; Zhu, Yu

2017-07-31

Silicon is regarded as the next generation anode material for LIBs with its ultra-high theoretical capacity and abundance. Nevertheless, the severe capacity degradation resulting from the huge volume change and accumulative solid-electrolyte interphase (SEI) formation hinders the silicon based anode material for further practical applications. Hence, a variety of methods have been applied to enhance electrochemical performances in terms of the electrochemical stability and rate performance of the silicon anodes such as designing nanostructured Si, combining with carbonaceous material, exploring multifunctional polymer binders, and developing artificial SEI layers. Silicon anodes with low-dimensional structures (0D, 1D, and 2D), compared with bulkymore » silicon anodes, are strongly believed to have several advanced characteristics including larger surface area, fast electron transfer, and shortened lithium diffusion pathway as well as better accommodation with volume changes, which leads to improved electrochemical behaviors. Finally, in this review, recent progress of silicon anode synthesis methodologies generating low-dimensional structures for lithium ion batteries (LIBs) applications is listed and discussed.« less

Innovative thin silicon detectors for monitoring of therapeutic proton beams: preliminary beam tests

NASA Astrophysics Data System (ADS)

Vignati, A.; Monaco, V.; Attili, A.; Cartiglia, N.; Donetti, M.; Fadavi Mazinani, M.; Fausti, F.; Ferrero, M.; Giordanengo, S.; Hammad Ali, O.; Mandurrino, M.; Manganaro, L.; Mazza, G.; Sacchi, R.; Sola, V.; Staiano, A.; Cirio, R.; Boscardin, M.; Paternoster, G.; Ficorella, F.

2017-12-01

To fully exploit the physics potentials of particle therapy in delivering dose with high accuracy and selectivity, charged particle therapy needs further improvement. To this scope, a multidisciplinary project (MoVeIT) of the Italian National Institute for Nuclear Physics (INFN) aims at translating research in charged particle therapy into clinical outcome. New models in the treatment planning system are being developed and validated, using dedicated devices for beam characterization and monitoring in radiobiological and clinical irradiations. Innovative silicon detectors with internal gain layer (LGAD) represent a promising option, overcoming the limits of currently used ionization chambers. Two devices are being developed: one to directly count individual protons at high rates, exploiting the large signal-to-noise ratio and fast collection time in small thicknesses (1 ns in 50 μm) of LGADs, the second to measure the beam energy with time-of-flight techniques, using LGADs optimized for excellent time resolutions (Ultra Fast Silicon Detectors, UFSDs). The preliminary results of first beam tests with therapeutic beam will be presented and discussed.

An ultra-fast optical shutter exploiting total light absorption in a phase change material

NASA Astrophysics Data System (ADS)

Jafari, Mohsen; Guo, L. Jay; Rais-Zadeh, Mina

2017-02-01

In this paper, we present an ultra-fast and high-contrast optical shutter with applications in atomic clock assemblies, integrated photonic systems, communication hardware, etc. The shutter design exploits the total light absorption phenomenon in a thin phase change (PC) material placed over a metal layer. The shutter switches between ON and OFF states by changing PC material phase and thus its refractive index. The PC material used in this work is Germanium Telluride (GeTe), a group IV-VI chalcogenide compound, which exhibits good optical contrast when switching from amorphous to crystalline state and vice versa. The stable phase changing behavior and reliability of GeTe and GeSbTe (GST) have been verified in optical memories and RF switches. Here, GeTe is used as it has a lower extinction coefficient in near-IR regions compared to GST. GeTe can be thermally transitioned between two phases by applying electrical pulses to an integrated heater. The memory behavior of GeTe results in zero static power consumption which is useful in applications requiring long time periods between switching activities. We previously demonstrated a meta-surface employing GeTe in sub-wavelength slits with >14 dB isolation at 1.5 μm by exciting the surface plasmon polariton and localized slit resonances. In this work, strong interference effects in a thin layer of GeTe over a gold mirror result in near total light absorption of up to 40 dB (21 dB measured) in the amorphous phase of the shutter at 780 nm with much less fabrication complexity. The optical loss at the shutter ON state is less than 1.5 dB. A nickel chrome (NiCr) heater provides the Joule heating energy required to achieve the crystallographic phase change. The measured switching speed is 2 μs.

Waveform digitization for high resolution timing detectors with silicon photomultipliers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ronzhin, A.; Albrow, M. G.; Los, S.

2012-03-01

The results of time resolution studies with silicon photomultipliers (SiPMs) read out with high bandwidth constant fraction discrimination electronics were presented earlier [1-3]. Here we describe the application of fast waveform digitization readout based on the DRS4 chip [4], a switched capacitor array (SCA) produced by the Paul Scherrer Institute, to further our goal of developing high time resolution detectors based on SiPMs. The influence of the SiPM signal shape on the time resolution was investigated. Different algorithms to obtain the best time resolution are described, and test beam results are presented.

Optical micro-cavities on silicon

NASA Astrophysics Data System (ADS)

Dai, Daoxin; Liu, Erhu; Tan, Ying

2018-01-01

Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding

NASA Astrophysics Data System (ADS)

Horn, Alexander; Mingaeev, Ilja; Werth, Alexander; Kachel, Martin

2008-02-01

Lighting applications like OLED or on silicon for electro-optical applications need a reproducible sealing process. The joining has to be strong, the permeability for gasses and humidity very low and the process itself has to be very localized not affecting any organic or electronic parts inside the sealed region. The actual sealing process using glue does not fulfil these industrial needs. A new joining process using ultra-fast laser radiation offers a very precise joining with geometry dimensions smaller than 50 μm. Ultra-fast laser radiation is absorbed by multi-photon absorption in the glass. Due to the very definite threshold for melting and ablation the process of localized heating can be controlled without cracking. Repeating the irradiation at times smaller than the heat diffusion time the temperature in the focus is increased by heat accumulation reaching melting of the glass. Mowing the substrate relatively to the laser beam generates a seal of re-solidified glass. Joining of glass is achieved by positioning the laser focus at the interface. A similar approach is used for glass-silicon joining. The investigations presented will demonstrate the joining geometry by microscopy of cross-sections achieved by welding two glass plates (Schott D263 and AF45) with focused IR femtosecond laser radiation (wavelength λ = 1045nm, repetition rate f = 1 MHz, pulse duration t p = 500 fs, focus diameter w 0 = 4 μm, feeding velocity v= 1-10 mm/s). The strength of the welding seam is measured by tensile stress measurements and the gas and humidity is detected. A new diagnostic method for the on-line detection of the welding seam properties will be presented. Using a non-interferometric technique by quantitative phase microscopy the refractive index is measured during welding of glass in the time regime 0-2 μs. By calibration of the measured refractive index with a relation between refractive index and temperature a online-temperature detection can be achieved.

Engineering the switching dynamics of TiOx-based RRAM with Al doping

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

2016-07-01

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Ultra-short silicon MMI duplexer

NASA Astrophysics Data System (ADS)

Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

2012-11-01

The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

Looking for Speed!! Go Optical Ultra-Fast Photonic Logic Gates for the Future Optical Communication and Computing

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Penn, Benjamin; Paley, Mark S.

2003-01-01

Recently, we developed two ultra-fast all-optical switches in the nanosecond and picosecond regimes. The picosecond switch is made of a polydiacetylene thin film coated on the interior wall of a hollow capillary of approximately 50 micron diameter by a photo-polymerization process. In the setup a picosecond Nd:YAG laser at 10 Hz and at 532 nm with a pulse duration of approximately 40 ps was sent collinearly along a cw He-Ne laser beam and both were waveguided through the hollow capillary. The setup functioned as an Exclusive OR gate. On the other hand, the material used in the nanosecond switch is a phthalocyanine thin film, deposited on a glass substrate by a vapor deposition technique. In the setup a nanosecond, 10 Hz, Nd:YAG laser of 8 ns pulse duration was sent collinearly along a cw He-Ne laser beam and both were wave-guided through the phthalocyanine thin film. The setup in this case functioned as an all-optical AND logic gate. The characteristic table of the ExOR gate in polydiacetylene film was attributed to an excited state absorption process, while that of the AND gate was attributed to a saturation process of the first excited state. Both mechanisms were thoroughly investigated theoretically and found to agree remarkably well with the experimental results. An all-optical inverter gate has been designed but has not yet been demonstrated. The combination of all these three gates form the foundation for building all the necessary gates needed to build a prototype of an all-optical system.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

3D Integration for Wireless Multimedia

NASA Astrophysics Data System (ADS)

Kimmich, Georg

The convergence of mobile phone, internet, mapping, gaming and office automation tools with high quality video and still imaging capture capability is becoming a strong market trend for portable devices. High-density video encode and decode, 3D graphics for gaming, increased application-software complexity and ultra-high-bandwidth 4G modem technologies are driving the CPU performance and memory bandwidth requirements close to the PC segment. These portable multimedia devices are battery operated, which requires the deployment of new low-power-optimized silicon process technologies and ultra-low-power design techniques at system, architecture and device level. Mobile devices also need to comply with stringent silicon-area and package-volume constraints. As for all consumer devices, low production cost and fast time-to-volume production is key for success. This chapter shows how 3D architectures can bring a possible breakthrough to meet the conflicting power, performance and area constraints. Multiple 3D die-stacking partitioning strategies are described and analyzed on their potential to improve the overall system power, performance and cost for specific application scenarios. Requirements and maturity of the basic process-technology bricks including through-silicon via (TSV) and die-to-die attachment techniques are reviewed. Finally, we highlight new challenges which will arise with 3D stacking and an outlook on how they may be addressed: Higher power density will require thermal design considerations, new EDA tools will need to be developed to cope with the integration of heterogeneous technologies and to guarantee signal and power integrity across the die stack. The silicon/wafer test strategies have to be adapted to handle high-density IO arrays, ultra-thin wafers and provide built-in self-test of attached memories. New standards and business models have to be developed to allow cost-efficient assembly and testing of devices from different silicon and technology providers.

Data Acquisition System for Silicon Ultra Fast Cameras for Electron and Gamma Sources in Medical Applications (sucima Imager)

NASA Astrophysics Data System (ADS)

Czermak, A.; Zalewska, A.; Dulny, B.; Sowicki, B.; Jastrząb, M.; Nowak, L.

2004-07-01

The needs for real time monitoring of the hadrontherapy beam intensity and profile as well as requirements for the fast dosimetry using Monolithic Active Pixel Sensors (MAPS) forced the SUCIMA collaboration to the design of the unique Data Acquisition System (DAQ SUCIMA Imager). The DAQ system has been developed on one of the most advanced XILINX Field Programmable Gate Array chip - VERTEX II. The dedicated multifunctional electronic board for the detector's analogue signals capture, their parallel digital processing and final data compression as well as transmission through the high speed USB 2.0 port has been prototyped and tested.

Ultra-fast self-assembly and stabilization of reactive nanoparticles in reduced graphene oxide films

PubMed Central

Chen, Yanan; Egan, Garth C.; Wan, Jiayu; Zhu, Shuze; Jacob, Rohit Jiji; Zhou, Wenbo; Dai, Jiaqi; Wang, Yanbin; Danner, Valencia A.; Yao, Yonggang; Fu, Kun; Wang, Yibo; Bao, Wenzhong; Li, Teng; Zachariah, Michael R.; Hu, Liangbing

2016-01-01

Nanoparticles hosted in conductive matrices are ubiquitous in electrochemical energy storage, catalysis and energetic devices. However, agglomeration and surface oxidation remain as two major challenges towards their ultimate utility, especially for highly reactive materials. Here we report uniformly distributed nanoparticles with diameters around 10 nm can be self-assembled within a reduced graphene oxide matrix in 10 ms. Microsized particles in reduced graphene oxide are Joule heated to high temperature (∼1,700 K) and rapidly quenched to preserve the resultant nano-architecture. A possible formation mechanism is that microsized particles melt under high temperature, are separated by defects in reduced graphene oxide and self-assemble into nanoparticles on cooling. The ultra-fast manufacturing approach can be applied to a wide range of materials, including aluminium, silicon, tin and so on. One unique application of this technique is the stabilization of aluminium nanoparticles in reduced graphene oxide film, which we demonstrate to have excellent performance as a switchable energetic material. PMID:27515900

Photonic integrated circuit optical buffer for packet-switched networks.

PubMed

Burmeister, Emily F; Mack, John P; Poulsen, Henrik N; Masanović, Milan L; Stamenić, Biljana; Blumenthal, Daniel J; Bowers, John E

2009-04-13

A chip-scale optical buffer performs autonomous contention resolution for 40-byte packets with 99% packet recovery. The buffer consists of a fast, InP-based 2 x 2 optical switch and a silica-on-silicon low loss delay loop. The buffer is demonstrated in recirculating operation, but may be reconfigured in feed-forward operation for longer packet lengths. The recirculating buffer provides packet storage in integer multiples of the delay length of 12.86 ns up to 64.3 ns with 98% packet recovery. The buffer is used to resolve contention between two 40 Gb/s packet streams using multiple photonic chip optical buffers.

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide.

PubMed

Sekiguchi, Shigeaki; Kurahashi, Teruo; Zhu, Lei; Kawaguchi, Kenichi; Morito, Ken

2012-04-09

We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

Demonstration of optical computing logics based on binary decision diagram.

PubMed

Lin, Shiyun; Ishikawa, Yasuhiko; Wada, Kazumi

2012-01-16

Optical circuits are low power consumption and fast speed alternatives for the current information processing based on transistor circuits. However, because of no transistor function available in optics, the architecture for optical computing should be chosen that optics prefers. One of which is Binary Decision Diagram (BDD), where signal is processed by sending an optical signal from the root through a serial of switching nodes to the leaf (terminal). Speed of optical computing is limited by either transmission time of optical signals from the root to the leaf or switching time of a node. We have designed and experimentally demonstrated 1-bit and 2-bit adders based on the BDD architecture. The switching nodes are silicon ring resonators with a modulation depth of 10 dB and the states are changed by the plasma dispersion effect. The quality, Q of the rings designed is 1500, which allows fast transmission of signal, e.g., 1.3 ps calculated by a photon escaping time. A total processing time is thus analyzed to be ~9 ps for a 2-bit adder and would scales linearly with the number of bit. It is two orders of magnitude faster than the conventional CMOS circuitry, ~ns scale of delay. The presented results show the potential of fast speed optical computing circuits.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Means and method for characterizing high power, ultra short laser pulses in a real time, on line manner

DOEpatents

Veligdan, J.T.

1994-03-08

An ultra short (<10 ps), high power laser pulse is temporally characterized by a system that uses a physical measurement of a wavefront that has been altered in a known manner. The system includes a first reflection switch to remove a portion of a pulse from a beam of pulses, then includes a second reflection switch, operating in a mode that is opposite to the first reflection switch, to slice off a portion of that removed portion. The sliced portion is then directed to a measuring device for physical measurement. The two reflection switches are arranged with respect to each other and with respect to the beam of ultra short pulses such that physical measurement of the sliced portion is related to the temporal measurement of the ultra short pulse by a geometric or trigonometric relationship. The reflection switches are operated by a control pulse that is directed to impinge on each of the reflection switches at a 90[degree] angle of incidence. 8 figures.

Means and method for characterizing high power, ultra short laser pulses in a real time, on line manner

DOEpatents

Veligdan, James T.

1994-01-01

An ultra short (<10 ps), high power laser pulse is temporally characterized by a system that uses a physical measurement of a wavefront that has been altered in a known manner. The system includes a first reflection switch to remove a portion of a pulse from a beam of pulses, then includes a second reflection switch, operating in a mode that is opposite to the first reflection switch, to slice off a portion of that removed portion. The sliced portion is then directed to a measuring device for physical measurement. The two reflection switches are arranged with respect to each other and with respect to the beam of ultra short pulses such that physical measurement of the sliced portion is related to the temporal measurement of the ultra short pulse by a geometric or trigonometric relationship. The reflection switches are operated by a control pulse that is directed to impinge on each of the reflection switches at a 90.degree. angle of incidence.

Current polarity-dependent manipulation of antiferromagnetic domains

NASA Astrophysics Data System (ADS)

Wadley, Peter; Reimers, Sonka; Grzybowski, Michal J.; Andrews, Carl; Wang, Mu; Chauhan, Jasbinder S.; Gallagher, Bryan L.; Campion, Richard P.; Edmonds, Kevin W.; Dhesi, Sarnjeet S.; Maccherozzi, Francesco; Novak, Vit; Wunderlich, Joerg; Jungwirth, Tomas

2018-05-01

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields1. Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents2. In previous experiments, orthogonal in-plane current pulses were used to induce 90° rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry3. Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using X-ray magnetic linear dichroism microscopy, and can also be detected electrically. Switching by domain-wall motion can occur at much lower current densities than those needed for coherent domain switching.

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

NASA Astrophysics Data System (ADS)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

High-performance silicon photonic tri-state switch based on balanced nested Mach-Zehnder interferometer.

PubMed

Lu, Zeqin; Celo, Dritan; Mehrvar, Hamid; Bernier, Eric; Chrostowski, Lukas

2017-09-25

This work proposes a novel silicon photonic tri-state (cross/bar/blocking) switch, featuring high-speed switching, broadband operation, and crosstalk-free performance. The switch is designed based on a 2 × 2 balanced nested Mach-Zehnder interferometer structure with carrier injection phase tuning. As compared to silicon photonic dual-state (cross/bar) switches based on Mach-Zehnder interferometers with carrier injection phase tuning, the proposed switch not only has better performance in cross/bar switching but also provides an extra blocking state. The unique blocking state has a great advantage in applications of N × N switch fabrics, where idle switching elements in the fabrics can be configured to the blocking state for crosstalk suppression. According to our numerical experiments on a fully loaded 8 × 8 dilated Banyan switch fabric, the worst output crosstalk of the 8 × 8 switch can be dramatically suppressed by more than 50 dB, by assigning the blocking state to idle switching elements in the fabric. The results of this work can extend the functionality of silicon photonic switches and significantly improve the performance of on-chip N × N photonic switching technologies.

Photonic crystal Fano resonances for realizing optical switches, lasers, and non-reciprocal elements

NASA Astrophysics Data System (ADS)

Bekele, Dagmawi A.; Yu, Yi; Hu, Hao; Ding, Yunhong; Sakanas, Aurimas; Ottaviano, Luisa; Semenova, Elizaveta; Oxenløwe, Leif K.; Yvind, Kresten; Mork, Jesper

2017-08-01

We present our work on photonic crystal membrane devices exploiting Fano resonance between a line-defect waveguide and a side coupled nanocavity. Experimental demonstration of fast and compact all-optical switches for wavelength-conversion is reported. It is shown how the use of an asymmetric structure in combination with cavity-enhanced nonlinearity can be used to realize non-reciprocal transmission at ultra-low power and with large bandwidth. A novel type of laser structure, denoted a Fano laser, is discussed in which one of the mirrors is based on a Fano resonance. Finally, the design, fabrication and characterization of grating couplers for efficient light coupling in and out of the indium phosphide photonic crystal platform is discussed.

Atomic resolution ultrafast scanning tunneling microscope with scan rate breaking the resonant frequency of a quartz tuning fork resonator.

PubMed

Li, Quanfeng; Lu, Qingyou

2011-05-01

We present an ultra-fast scanning tunneling microscope with atomic resolution at 26 kHz scan rate which surpasses the resonant frequency of the quartz tuning fork resonator used as the fast scan actuator. The main improvements employed in achieving this new record are (1) fully low voltage design (2) independent scan control and data acquisition, where the tuning fork (carrying a tip) is blindly driven to scan by a function generator with the scan voltage and tunneling current (I(T)) being measured as image data (this is unlike the traditional point-by-point move and measure method where data acquisition and scan control are switched many times).

Photothermally tunable silicon-microring-based optical add-drop filter through integrated light absorber.

PubMed

Chen, Xi; Shi, Yuechun; Lou, Fei; Chen, Yiting; Yan, Min; Wosinski, Lech; Qiu, Min

2014-10-20

An optically pumped thermo-optic (TO) silicon ring add-drop filter with fast thermal response is experimentally demonstrated. We propose that metal-insulator-metal (MIM) light absorber can be integrated into silicon TO devices, acting as a localized heat source which can be activated remotely by a pump beam. The MIM absorber design introduces less thermal capacity to the device, compared to conventional electrically-driven approaches. Experimentally, the absorber-integrated add-drop filter shows an optical response time of 13.7 μs following the 10%-90% rule (equivalent to a exponential time constant of 5 μs) and a wavelength shift over pump power of 60 pm/mW. The photothermally tunable add-drop filter may provide new perspectives for all-optical routing and switching in integrated Si photonic circuits.

Fast and slow light generated by surface plasmon wave and gold grating coupling effects

NASA Astrophysics Data System (ADS)

Amiri, Iraj S.; Ariannejad, M. M.; Tajdidzadeh, M.; Sorger, Volker J.; Ling, Xi; Yupapin, P.

2018-06-01

We present here the results of a simulation of the effect of gold and graphene coatings on silicon micro-ring resonators. We studied the effect of different radii of graphene on the time delay, from which one an interesting aspect of light pulse behaviors, such as fast light, was numerically investigated. The obtained results indicate that the time delay can be varied, which is in good agreement with theoretical predictions. Fast and slow light pulse trains can be obtained by modifying the throughput port, which forms the gold grating length. The temporal gaps between the fast and slow light in the used graphene and gold are 140 and 168 fs, respectively, which can be tuned by varying the radius or grating length. The obtained results show that such a device may be useful in applications requiring fast and slow light pulse train pairs, such as optical switching, sensors, communications, and security applications.

Fast and slow light generated by surface plasmon wave and gold grating coupling effects

NASA Astrophysics Data System (ADS)

Amiri, Iraj S.; Ariannejad, M. M.; Tajdidzadeh, M.; Sorger, Volker J.; Ling, Xi; Yupapin, P.

2018-01-01

We present here the results of a simulation of the effect of gold and graphene coatings on silicon micro-ring resonators. We studied the effect of different radii of graphene on the time delay, from which one an interesting aspect of light pulse behaviors, such as fast light, was numerically investigated. The obtained results indicate that the time delay can be varied, which is in good agreement with theoretical predictions. Fast and slow light pulse trains can be obtained by modifying the throughput port, which forms the gold grating length. The temporal gaps between the fast and slow light in the used graphene and gold are 140 and 168 fs, respectively, which can be tuned by varying the radius or grating length. The obtained results show that such a device may be useful in applications requiring fast and slow light pulse train pairs, such as optical switching, sensors, communications, and security applications.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Ultra fast all-optical fiber pressure sensor for blast event evaluation

NASA Astrophysics Data System (ADS)

Wu, Nan; Wang, Wenhui; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

2011-05-01

Traumatic brain injury (TBI) is a great potential threat to soldiers who are exposed to explosions or athletes who receive cranial impacts. Protecting people from TBI has recently attracted a significant amount of attention due to recent military operations in the Middle East. Recording pressure transient data in a blast event is very critical to the understanding of the effects of blast events on TBI. However, due to the fast change of the pressure during blast events, very few sensors have the capability to effectively track the dynamic pressure transients. This paper reports an ultra fast, miniature and all-optical fiber pressure sensor which could be mounted at different locations of a helmet to measure the fast changing pressure simultaneously. The sensor is based on Fabry-Perot (FP) principle. The end face of the fiber is wet etched. A well controlled thickness silicon dioxide diaphragm is thermal bonded on the end face to form an FP cavity. A shock tube test was conducted at Natick Soldier Research Development and Engineering Center, where the sensors were mounted in a shock tube side by side with a reference sensor to measure the rapidly changing pressure. The results of the test demonstrated that the sensor developed had an improved rise time (shorter than 0.4 μs) when compared to a commercially available reference sensor.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Development and fabrication of a high current, fast recovery power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.

1983-01-01

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

TDM interrogation of intensity-modulated USFBGs network based on multichannel lasers.

PubMed

Rohollahnejad, Jalal; Xia, Li; Cheng, Rui; Ran, Yanli; Rahubadde, Udaya; Zhou, Jiaao; Zhu, Lin

2017-01-23

We report a large-scale multi-channel fiber sensing network, where ultra-short FBGs (USFBGs) instead of conventional narrow-band ultra-weak FBGs are used as the sensors. In the time division multiplexing scheme of the network, each grating response is resolved as three adjacent discrete peaks. The central wavelengths of USFBGs are tracked with the differential detection, which is achieved by calculating the peak-to-peak ratio of two maximum peaks. Compared with previous large-scale hybrid multiplexing sensing networks (e.g., WDM/TDM) which typically have relatively low interrogation speed and very high complexity, the proposed system can achieve interrogation of all channel sensors through very fast and simple intensity measurements with a broad dynamic range. A proof-of-concept experiment with twenty USFBGs, at two wavelength channels, was performed and a fast static strain measurements were demonstrated, with a high average sensitivity of ~0.54dB/µƐ and wide dynamic range of over ~3000µƐ. The channel to channel switching time was 10ms and total network interrogation time was 50ms.

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices

DOE PAGES

Zhang, Zheyu; Dix, Jeffery; Wang, Fei Fred; ...

2017-01-19

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiCmore » MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.« less

Programming Nanoparticles in Multiscale: Optically Modulated Assembly and Phase Switching of Silicon Nanoparticle Array.

PubMed

Wang, Letian; Rho, Yoonsoo; Shou, Wan; Hong, Sukjoon; Kato, Kimihiko; Eliceiri, Matthew; Shi, Meng; Grigoropoulos, Costas P; Pan, Heng; Carraro, Carlo; Qi, Dongfeng

2018-03-27

Manipulating and tuning nanoparticles by means of optical field interactions is of key interest for nanoscience and applications in electronics and photonics. We report scalable, direct, and optically modulated writing of nanoparticle patterns (size, number, and location) of high precision using a pulsed nanosecond laser. The complex nanoparticle arrangement is modulated by the laser pulse energy and polarization with the particle size ranging from 60 to 330 nm. Furthermore, we report fast cooling-rate induced phase switching of crystalline Si nanoparticles to the amorphous state. Such phase switching has usually been observed in compound phase change materials like GeSbTe. The ensuing modification of atomic structure leads to dielectric constant switching. Based on these effects, a multiscale laser-assisted method of fabricating Mie resonator arrays is proposed. The number of Mie resonators, as well as the resonance peaks and dielectric constants of selected resonators, can be programmed. The programmable light-matter interaction serves as a mechanism to fabricate optical metasurfaces, structural color, and multidimensional optical storage devices.

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1997-01-01

The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.

4D tracking with ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

2018-02-01

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

PubMed

Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

2012-09-28

To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.

FAST TRACK COMMUNICATION: Nanocrystalline silicon film growth morphology control through RF waveform tailoring

NASA Astrophysics Data System (ADS)

Johnson, Erik V.; Verbeke, Thomas; Vanel, Jean-Charles; Booth, Jean-Paul

2010-10-01

We demonstrate the application of RF waveform tailoring to generate an electrical asymmetry in a capacitively coupled plasma-enhanced chemical vapour deposition system, and its use to control the growth mode of hydrogenated amorphous and nanocrystalline silicon thin films deposited at low temperature (150 °C). A dramatic shift in the dc bias potential at the powered electrode is observed when simply inverting the voltage waveform from 'peaks' to 'troughs', indicating an asymmetric distribution of the sheath voltage. By enhancing or suppressing the ion bombardment energy at the substrate (situated on the grounded electrode), the growth of thin silicon films can be switched between amorphous and nanocrystalline modes, as observed using in situ spectroscopic ellipsometry. The effect is observed at pressures sufficiently low that the collisional reduction in average ion bombardment energy is not sufficient to allow nanocrystalline growth (<100 mTorr).

Design of air blast pressure sensors based on miniature silicon membrane and piezoresistive gauges

NASA Astrophysics Data System (ADS)

Riondet, J.; Coustou, A.; Aubert, H.; Pons, P.; Lavayssière, M.; Luc, J.; Lefrançois, A.

2017-11-01

Available commercial piezoelectric pressure sensors are not able to accurately reproduce the ultra-fast transient pressure occurring during an air blast experiment. In this communication a new pressure sensor prototype based on a miniature silicon membrane and piezoresistive gauges is reported for significantly improving the performances in terms of time response. Simulation results demonstrate the feasibility of a pressure transducer having a fundamental resonant frequency almost ten times greater than the commercial piezoelectric sensors one. The sensor uses a 5μm-thick SOI membrane and four P-type silicon gauges (doping level ≅ 1019 at/cm3) in Wheatstone bridge configuration. To obtain a good trade-off between the fundamental mechanical resonant frequency and pressure sensitivity values, the typical dimension of the rectangular membrane is fixed to 30μm x 90μm with gauge dimension of 1μm x 5μm. The achieved simulated mechanical resonant frequency of these configuration is greater than 40MHz with a sensitivity of 0.04% per bar.

A new timing detector for the CT-PPS project

NASA Astrophysics Data System (ADS)

Arcidiacono, R.; Cms; TOTEM Collaborations

2017-02-01

The CT-PPS detector will be installed close to the beam line on both sides of CMS, 200 m downstream the interaction point. This detector will measure forward scattered protons, allowing detailed studies of diffractive hadron physics and Central Exclusive Production. The main components of the CT-PPS detector are a silicon tracking system and a timing system. In this contribution we present the proposal of an innovative solution for the timing system, based on Ultra-Fast Silicon Detectors (UFSD). UFSD are a novel concept of silicon detectors potentially able to obtain the necessary time resolution (∼20 ps on the proton arrival time). The use of UFSD has also other attractive features as its material budget is small and the pixel geometries can be tailored to the precise physics distribution of protons. UFSD prototypes for CT-PPS have been designed by CNM (Barcelona) and FBK (Trento): we will present the status of the sensor productions and of the low-noise front-end electronics currently under development and test.

R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

ScienceCinema

Dries, Chris; Hostetler, John; Atcitty, Stan

2018-06-12

Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon

NASA Astrophysics Data System (ADS)

Liu, Yan-Yan; Geng, Wei-Dong; Dai, Yong-Ping

2010-03-01

The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simulation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices.

PubMed

Gysin, Urs; Glatzel, Thilo; Schmölzer, Thomas; Schöner, Adolf; Reshanov, Sergey; Bartolf, Holger; Meyer, Ernst

2015-01-01

The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip-sample interface for optically excited measurements such as local surface photo voltage detection. We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

Retro-modulators and fast beam steering for free-space optical communications

NASA Astrophysics Data System (ADS)

Chan, Trevor Keith

Free-space optical (FSO) communications is a means of secure, high bandwidth communication through the use of a modulated laser beam in free-space as the information medium. The chaotic nature of the atmosphere and the motion of the communication nodes make laser alignment a crucial concern. The employment of retro-reflecting modulators makes the bidirectional quality of a communication link into a one sided alignment problem. While there are existing retro-reflecting modulators, their trade-offs create a lack of abilities (such as aperture size, angular range, high modulation speeds, economic viability) which do not fulfill the requirements for certain applications. Also, the beam must be directed towards the intended receiver. Form mobile or scintillated communication links, beam direction must be adaptable in real time. Once again, this area suffers from trade-offs where beamsteering speed is often limited. Research used to mitigate the trade-offs and adapt the devices into viable options for a wider range of applications is explored in this dissertation. Two forms of retro-modulators were explored; a MEMS deformable mirror retro-modulator and a solid silicon retro-modulator that modulated the light by frustrated total internal reflection (FTIR). The MEMS version offered a high speed, scalable, wavelength/angle insensitive retro-modulator which can be massed produced at low cost, while the solid retro-modulator offered a large field of view with low cost as well. Both modulator's design, simulated performances, fabrication and experimental characterization are described in this dissertation. An ultra-fast beamscanner was also designed using 2-dimensional dispersion. By using wavelength switching for directional control, a beamscanner was developed that could switch light faster than pre-existing beamscanners while the beams characteristics (most importantly its aperture) could be freely adjusted by the independent optics. This beamscanner was preceded by our work on a large channel wavelength demultiplexer which combined two orthogonally oriented wavelength demultiplexers. This created a 2-dimensional array of spots in free-space. The light was directed be a collimating lens into a specific direction based on its wavelength. The performance of this beamscanner was simulated by modeling the dispersive properties of the components.

A simple dual online ultra-high pressure liquid chromatography system (sDO-UHPLC) for high throughput proteome analysis.

PubMed

Lee, Hangyeore; Mun, Dong-Gi; Bae, Jingi; Kim, Hokeun; Oh, Se Yeon; Park, Young Soo; Lee, Jae-Hyuk; Lee, Sang-Won

2015-08-21

We report a new and simple design of a fully automated dual-online ultra-high pressure liquid chromatography system. The system employs only two nano-volume switching valves (a two-position four port valve and a two-position ten port valve) that direct solvent flows from two binary nano-pumps for parallel operation of two analytical columns and two solid phase extraction (SPE) columns. Despite the simple design, the sDO-UHPLC offers many advantageous features that include high duty cycle, back flushing sample injection for fast and narrow zone sample injection, online desalting, high separation resolution and high intra/inter-column reproducibility. This system was applied to analyze proteome samples not only in high throughput deep proteome profiling experiments but also in high throughput MRM experiments.

Electrical switching of antiferromagnets via strongly spin-orbit coupled materials

NASA Astrophysics Data System (ADS)

Li, Xi-Lai; Duan, Xiaopeng; Semenov, Yuriy G.; Kim, Ki Wook

2017-01-01

Electrically controlled ultra-fast switching of an antiferromagnet (AFM) is shown to be realizable by interfacing it with a material of strong spin-orbit coupling. The proximity interaction between the sublattice magnetic moments of a layered AFM and the spin-polarized free electrons at the interface offers an efficient way to manipulate antiferromagnetic states. A quantitative analysis, using the combination with a topological insulator as an example, demonstrates highly reliable 90° and 180° rotations of AFM magnetic states under two different mechanisms of effective torque generation at the interface. The estimated switching speed and energy requirement are in the ps and aJ ranges, respectively, which are about two-three orders of magnitude better than the ferromagnetic counterparts. The observed differences in the magnetization dynamics may explain the disparate characteristic responses. Unlike the usual precessional/chiral motions in the ferromagnets, those of the AFMs can essentially be described as a damped oscillator with a more direct path. The impact of random thermal fluctuations is also examined.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

PubMed

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

First results of the silicon telescope using an 'artificial retina' for fast track finding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neri, N.; Abba, A.; Caponio, F.

We present the first results of the prototype of a silicon tracker with trigger capabilities based on a novel approach for fast track finding. The working principle of the 'artificial retina' is inspired by the processing of visual images by the brain and it is based on extensive parallelization of data distribution and pattern recognition. The algorithm has been implemented in commercial FPGAs in three main logic modules: a switch for the routing of the detector hits, a pool of engines for the digital processing of the hits, and a block for the calculation of the track parameters. The architecturemore » is fully pipelined and allows the reconstruction of real-time tracks with a latency less then 100 clock cycles, corresponding to 0.25 microsecond at 400 MHz clock. The silicon telescope consists of 8 layers of single-sided silicon strip detectors with 512 strips each. The detector size is about 10 cm x 10 cm and the strip pitch is 183 μm. The detectors are read out by the Beetle chip, a custom ASICs developed for LHCb, which provides the measurement of the hit position and pulse height of 128 channels. The 'artificial retina' algorithm has been implemented on custom data acquisition boards based on FPGAs Xilinx Kintex 7 lx160. The parameters of the tracks detected are finally transferred to host PC via USB 3.0. The boards manage the read-out ASICs and the sampling of the analog channels. The read-out is performed at 40 MHz on 4 channels for each ASIC that corresponds to a decoding of the telescope information at 1.1 MHz. We report on the first results of the fast tracking device and compare with simulations. (authors)« less

An optical microswitch chip integrated with silicon waveguides and touch-down electrostatic micromirrors

NASA Astrophysics Data System (ADS)

Jin, Young-Hyun; Seo, Kyoung-Sun; Cho, Young-Ho; Lee, Sang-Shin; Song, Ki-Chang; Bu, Jong-Uk

2004-12-01

We present an silicon-on-insulator (SOI) optical microswitch, composed of silicon waveguides and electrostatically actuated gold-coated silicon micromirrors integrated with laser diode (LD) receivers and photo diode (PD) transmitters. For a low switching voltage, we modify the conventional curved electrode microactuator into a new microactuator with touch-down beams. We fabricate the waveguides and the actuated micromirror using the inductively coupled plasma (ICP) etching process of SOI wafers. The fabricated microswitch operates at the switching voltage of 31.7 ± 4 V with the resonant frequency of 6.89 kHz. Compared to the conventional microactuator, the touch-down beam microactuator achieves 77.4% reduction of the switching voltage. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of 4.18 ± 0.25 dB. We discuss a feasible method to achieve the switching voltage lower than 10 V by reducing the residual stress in the insulation layers of touch-down beams to the level of 30 MPa. We also analyze the major source of micromirror loss, thereby presenting design guidelines for low-loss micromirror switches.

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

Ultra-fast quantum randomness generation by accelerated phase diffusion in a pulsed laser diode.

PubMed

Abellán, C; Amaya, W; Jofre, M; Curty, M; Acín, A; Capmany, J; Pruneri, V; Mitchell, M W

2014-01-27

We demonstrate a high bit-rate quantum random number generator by interferometric detection of phase diffusion in a gain-switched DFB laser diode. Gain switching at few-GHz frequencies produces a train of bright pulses with nearly equal amplitudes and random phases. An unbalanced Mach-Zehnder interferometer is used to interfere subsequent pulses and thereby generate strong random-amplitude pulses, which are detected and digitized to produce a high-rate random bit string. Using established models of semiconductor laser field dynamics, we predict a regime of high visibility interference and nearly complete vacuum-fluctuation-induced phase diffusion between pulses. These are confirmed by measurement of pulse power statistics at the output of the interferometer. Using a 5.825 GHz excitation rate and 14-bit digitization, we observe 43 Gbps quantum randomness generation.

Feasibility of UltraFast Doppler in Post-operative Evaluation of Hepatic Artery in Recipients following Liver Transplantation.

PubMed

Kim, Se-Young; Kim, Kyoung Won; Choi, Sang Hyun; Kwon, Jae Hyun; Song, Gi-Won; Kwon, Heon-Ju; Yun, Young Ju; Lee, Jeongjin; Lee, Sung-Gyu

2017-11-01

To determine the feasibility of using UltraFast Doppler in post-operative evaluation of the hepatic artery (HA) after liver transplantation (LT), we evaluated 283 simultaneous conventional and UltraFast Doppler sessions in 126 recipients over a 2-mo period after LT, using an Aixplorer scanner The Doppler indexes of the HA (peak systolic velocity [PSV], end-diastolic velocity [EDV], resistive index [RI] and systolic acceleration time [SAT]) by retrospective analysis of retrieved waves from UltraFast Doppler clips were compared with those obtained by conventional spectral Doppler. Correlation, performance in diagnosing the pathologic wave, examination time and reproducibility were evaluated. The PSV, EDV, RI and SAT of spectral and UltraFast Doppler measurements exhibited excellent correlation with favorable diagnostic performance. During the bedside examination, the mean time spent for UltraFast clip storing was significantly shorter than that for conventional Doppler US measurements. Both conventional and UltraFast Doppler exhibited good to excellent inter-analysis consistency. In conclusion, compared with conventional spectral Doppler, UltraFast Doppler values correlated excellently and yielded acceptable pathologic wave diagnostic performance with reduced examination time at the bedside and excellent reproducibility. Copyright © 2017 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Martin, Adam K.; Hudgins, Jerry L.

2014-01-01

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

32 × 32 silicon electro-optic switch with built-in monitors and balanced-status units.

PubMed

Qiao, Lei; Tang, Weijie; Chu, Tao

2017-02-09

To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach-Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push-pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal-oxide-semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from -17.9 to -24.8 dB when all units were set to the 'Cross' status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from -15.1 to -19.0 dB when all units were in the 'Bar' status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the 'Cross' and 'Bar' statuses, respectively.

32 × 32 silicon electro-optic switch with built-in monitors and balanced-status units

PubMed Central

Qiao, Lei; Tang, Weijie; Chu, Tao

2017-01-01

To construct large-scale silicon electro-optical switches for optical interconnections, we developed a method using a limited number of power monitors inserted at certain positions to detect and determine the optimum operating points of all switch units to eliminate non-uniform effects arising from fabrication errors. We also introduced an optical phase bias to one phase-shifter arm of a Mach–Zehnder interferometer (MZI)-type switch unit to balance the two operation statuses of a silicon electro-optical switch during push–pull operation. With these methods, a 32 × 32 MZI-based silicon electro-optical switch was successfully fabricated with 180-nm complementary metal–oxide–semiconductor (CMOS) process technology, which is the largest scale silicon electro-optical switch to the best of our knowledge. At a wavelength of 1520 nm, the on-chip insertion losses were 12.9 to 16.5 dB, and the crosstalk ranged from −17.9 to −24.8 dB when all units were set to the ‘Cross’ status. The losses were 14.4 to 18.5 dB, and the crosstalk ranged from −15.1 to −19.0 dB when all units were in the ‘Bar’ status. The total power consumptions of the 32 × 32 switch were 247.4 and 542.3 mW when all units were set to the ‘Cross’ and ‘Bar’ statuses, respectively. PMID:28181557

Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

NASA Astrophysics Data System (ADS)

Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

2013-09-01

We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

Ultra-large nonlinear parameter in graphene-silicon waveguide structures.

PubMed

Donnelly, Christine; Tan, Dawn T H

2014-09-22

Mono-layer graphene integrated with optical waveguides is studied for the purpose of maximizing E-field interaction with the graphene layer, for the generation of ultra-large nonlinear parameters. It is shown that the common approach used to minimize the waveguide effective modal area does not accurately predict the configuration with the maximum nonlinear parameter. Both photonic and plasmonic waveguide configurations and graphene integration techniques realizable with today's fabrication tools are studied. Importantly, nonlinear parameters exceeding 10(4) W(-1)/m, two orders of magnitude larger than that in silicon on insulator waveguides without graphene, are obtained for the quasi-TE mode in silicon waveguides incorporating mono-layer graphene in the evanescent part of the optical field. Dielectric loaded surface plasmon polariton waveguides incorporating mono-layer graphene are observed to generate nonlinear parameters as large as 10(5) W(-1)/m, three orders of magnitude larger than that in silicon on insulator waveguides without graphene. The ultra-large nonlinear parameters make such waveguides promising platforms for nonlinear integrated optics at ultra-low powers, and for previously unobserved nonlinear optical effects to be studied in a waveguide platform.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

SALT, a dedicated readout chip for high precision tracking silicon strip detectors at the LHCb Upgrade

NASA Astrophysics Data System (ADS)

Bugiel, Sz.; Dasgupta, R.; Firlej, M.; Fiutowski, T.; Idzik, M.; Kuczynska, M.; Moron, J.; Swientek, K.; Szumlak, T.

2016-02-01

The Upstream Tracker (UT) silicon strip detector, one of the central parts of the tracker system of the modernised LHCb experiment, will use a new 128-channel readout ASIC called SALT. It will extract and digitise analogue signals from the UT sensors, perform digital signal processing and transmit a serial output data. The SALT is being designed in CMOS 130 nm process and uses a novel architecture comprising of analog front-end and fast (40 MSps) ultra-low power (<0.5 mW) 6-bit ADC in each channel. The prototype ASICs of important functional blocks, like analogue front-end, 6-bit SAR ADC, PLL, and DLL, were designed, fabricated and tested. A prototype of an 8-channel version of the SALT chip, comprising all important functionalities was also designed and fabricated. The architecture and design of the SALT, together with the selected preliminary tests results, are presented.

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

NASA Astrophysics Data System (ADS)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films.

PubMed

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-29

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO 2 ultra-thin films. The SiO 2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO 2 ∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO 2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO 2 interface.

Ultra Low Outgassing silicone performance in a simulated space ionizing radiation environment

NASA Astrophysics Data System (ADS)

Velderrain, M.; Malave, V.; Taylor, E. W.

2010-09-01

The improvement of silicone-based materials used in space and aerospace environments has garnered much attention for several decades. Most recently, an Ultra Low Outgassing™ silicone incorporating innovative reinforcing and functional fillers has shown that silicone elastomers with unique and specific properties can be developed to meet applications requiring stringent outgassing requirements. This paper will report on the next crucial step in qualifying these materials for spacecraft applications requiring chemical and physical stability in the presence of ionizing radiation. As a first step in this process, selected materials were irradiated with Co-60 gamma-rays to simulate the total dose received in near- Earth orbits. The paper will present pre-and post-irradiation response data of Ultra Low Outgassing silicone samples exposed under ambient air environment coupled with measurements of collected volatile condensable material (CVCM) and total mass loss (TML) per the standard conditions in ASTM E 595. The data will show an insignificant effect on the CVCMs and TMLs after exposure to various dosages of gamma radiation. This data may favorably impact new applications for these silicone materials for use as an improved sealant for space solar cell systems, space structures, satellite systems and aerospace systems.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

On bistable states retention in ferroelectric Langmuir-Blodgett films

NASA Astrophysics Data System (ADS)

Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

2003-08-01

A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry

NASA Astrophysics Data System (ADS)

Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi

1995-08-01

High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

mrsFAST-Ultra: a compact, SNP-aware mapper for high performance sequencing applications.

PubMed

Hach, Faraz; Sarrafi, Iman; Hormozdiari, Farhad; Alkan, Can; Eichler, Evan E; Sahinalp, S Cenk

2014-07-01

High throughput sequencing (HTS) platforms generate unprecedented amounts of data that introduce challenges for processing and downstream analysis. While tools that report the 'best' mapping location of each read provide a fast way to process HTS data, they are not suitable for many types of downstream analysis such as structural variation detection, where it is important to report multiple mapping loci for each read. For this purpose we introduce mrsFAST-Ultra, a fast, cache oblivious, SNP-aware aligner that can handle the multi-mapping of HTS reads very efficiently. mrsFAST-Ultra improves mrsFAST, our first cache oblivious read aligner capable of handling multi-mapping reads, through new and compact index structures that reduce not only the overall memory usage but also the number of CPU operations per alignment. In fact the size of the index generated by mrsFAST-Ultra is 10 times smaller than that of mrsFAST. As importantly, mrsFAST-Ultra introduces new features such as being able to (i) obtain the best mapping loci for each read, and (ii) return all reads that have at most n mapping loci (within an error threshold), together with these loci, for any user specified n. Furthermore, mrsFAST-Ultra is SNP-aware, i.e. it can map reads to reference genome while discounting the mismatches that occur at common SNP locations provided by db-SNP; this significantly increases the number of reads that can be mapped to the reference genome. Notice that all of the above features are implemented within the index structure and are not simple post-processing steps and thus are performed highly efficiently. Finally, mrsFAST-Ultra utilizes multiple available cores and processors and can be tuned for various memory settings. Our results show that mrsFAST-Ultra is roughly five times faster than its predecessor mrsFAST. In comparison to newly enhanced popular tools such as Bowtie2, it is more sensitive (it can report 10 times or more mappings per read) and much faster (six times or more) in the multi-mapping mode. Furthermore, mrsFAST-Ultra has an index size of 2GB for the entire human reference genome, which is roughly half of that of Bowtie2. mrsFAST-Ultra is open source and it can be accessed at http://mrsfast.sourceforge.net. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1999-01-01

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Characterization of a thinned back illuminated MIMOSA V sensor as a visible light camera

NASA Astrophysics Data System (ADS)

Bulgheroni, Antonio; Bianda, Michele; Caccia, Massimo; Cappellini, Chiara; Mozzanica, Aldo; Ramelli, Renzo; Risigo, Fabio

2006-09-01

This paper reports the measurements that have been performed both in the Silicon Detector Laboratory at the University of Insubria (Como, Italy) and at the Instituto Ricerche SOlari Locarno (IRSOL) to characterize a CMOS pixel particle detector as a visible light camera. The CMOS sensor has been studied in terms of Quantum Efficiency in the visible spectrum, image blooming and reset inefficiency in saturation condition. The main goal of these measurements is to prove that this kind of particle detector can also be used as an ultra fast, 100% fill factor visible light camera in solar physics experiments.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Ultrasensitive Silicon Photonic-Crystal Nanobeam Electro-Optical Modulator (Preprint)

DTIC Science & Technology

2013-10-01

and simulation results are presented for an ultralow switching energy, resonator based silicon-on-insulator (SOI) electro-optical modulator. The...joshua.hendrickson@wpafb.af.mil Abstract: Design and simulation results are presented for an ultralow switching energy, resonator based silicon-on...S. Fegadolli, J. E. B. Oliveira, V. R. Almeida, and A. Scherer, “Compact and low power consumption tunable photonic crystal nanobeam cavity,” 21

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

Zeroth order Fabry-Perot resonance enabled ultra-thin perfect light absorber using percolation aluminum and silicon nanofilms

DOE PAGES

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

2016-03-04

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Ultra-wide band signal generation using a coupling-tunable silicon microring resonator.

PubMed

Ding, Yunhong; Huang, Bo; Peucheret, Christophe; Xu, Jing; Ou, Haiyan; Zhang, Xinliang; Huang, Dexiu

2014-03-10

Ultra-wide band signal generation using a silicon microring resonator tuned to an NRZ-DPSK modulated optical carrier is proposed and demonstrated. The scheme is shown to enable the generation of UWB signals with switchable polarity and tunable bandwidth by simply tuning the coupling regions of the microring resonator. Monocycle pulses with both negative and positive polarities are successfully synthesized experimentally.

Mechanisms of Superplastic Deformation of Nanocrystalline Silicon Carbide Ceramics

DTIC Science & Technology

2012-08-01

These included the following: standard hot isostatic pressing (HIP), spark plasma sintering , ultra-high pressure HIP, and a multianvil pressure...96.8 2270 Multianvil apparatus 1200 3000 94.8 1130 Note: SPS = spark plasma sintering . 2 Figure 1. Ultra-high pressure HIP; 1600 °C, 980...strain rate sensitivity and flow stress. 15. SUBJECT TERMS silicon carbide, nanostructure, sintering , hot isostatic pressing, hardness 16. SECURITY

A scalable silicon photonic chip-scale optical switch for high performance computing systems.

PubMed

Yu, Runxiang; Cheung, Stanley; Li, Yuliang; Okamoto, Katsunari; Proietti, Roberto; Yin, Yawei; Yoo, S J B

2013-12-30

This paper discusses the architecture and provides performance studies of a silicon photonic chip-scale optical switch for scalable interconnect network in high performance computing systems. The proposed switch exploits optical wavelength parallelism and wavelength routing characteristics of an Arrayed Waveguide Grating Router (AWGR) to allow contention resolution in the wavelength domain. Simulation results from a cycle-accurate network simulator indicate that, even with only two transmitter/receiver pairs per node, the switch exhibits lower end-to-end latency and higher throughput at high (>90%) input loads compared with electronic switches. On the device integration level, we propose to integrate all the components (ring modulators, photodetectors and AWGR) on a CMOS-compatible silicon photonic platform to ensure a compact, energy efficient and cost-effective device. We successfully demonstrate proof-of-concept routing functions on an 8 × 8 prototype fabricated using foundry services provided by OpSIS-IME.

Transition Metal Compounds Towards Holography

PubMed Central

Dieckmann, Volker; Eicke, Sebastian; Springfeld, Kristin; Imlau, Mirco

2012-01-01

We have successfully proposed the application of transition metal compounds in holographic recording media. Such compounds feature an ultra-fast light-induced linkage isomerization of the transition-metal–ligand bond with switching times in the sub-picosecond regime and lifetimes from microseconds up to hours at room temperature. This article highlights the photofunctionality of two of the most promising transition metal compounds and the photophysical mechanisms that are underlying the hologram recording. We present the latest progress with respect to the key measures of holographic media assembled from transition metal compounds, the molecular embedding in a dielectric matrix and their impressive potential for modern holographic applications. PMID:28817028

Potential clinical impact of laser-accelerated beams in cancer ion therapy

NASA Astrophysics Data System (ADS)

Obcemea, Ceferino

2016-09-01

In this article, I present three advantages of plasma-accelerated ion beams for cancer therapy. I discuss how: 1. low-emittance and well-collimated beams are advantageous in proximal normal tissue-sparing; 2. highly-peaked quasi-monoenergetic beams are ideal for fast energy selection and switching in Pencil Beam Scanning (PBS) as a treatment delivery; 3. high fluence and ultra-short pulse delivery produce collective excitations in the medium and enhance the stopping power. This in turn produces denser ionization track signatures (spurs, blobs, etc.) in target tumors, higher linear energy transfer, higher Bragg peak, and higher radiobiological effectiveness at the micro-level.

Cost-effective method of manufacturing a 3D MEMS optical switch

NASA Astrophysics Data System (ADS)

Carr, Emily; Zhang, Ping; Keebaugh, Doug; Chau, Kelvin

2009-02-01

growth of data and video transport networks. All-optical switching eliminates the need for optical-electrical conversion offering the ability to switch optical signals transparently: independent of data rates, formats and wavelength. It also provides network operators much needed automation capabilities to create, monitor and protect optical light paths. To further accelerate the market penetration, it is necessary to identify a path to reduce the manufacturing cost significantly as well as enhance the overall system performance, uniformity and reliability. Currently, most MEMS optical switches are assembled through die level flip-chip bonding with either epoxies or solder bumps. This is due to the alignment accuracy requirements of the switch assembly, defect matching of individual die, and cost of the individual components. In this paper, a wafer level assembly approach is reported based on silicon fusion bonding which aims to reduce the packaging time, defect count and cost through volume production. This approach is successfully demonstrated by the integration of two 6-inch wafers: a mirror array wafer and a "snap-guard" wafer, which provides a mechanical structure on top of the micromirror to prevent electrostatic snap-down. The direct silicon-to-silicon bond eliminates the CTEmismatch and stress issues caused by non-silicon bonding agents. Results from a completed integrated switch assembly will be presented, which demonstrates the reliability and uniformity of some key parameters of this MEMS optical switch.

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Optics Communications: Special issue on Polymer Photonics and Its Applications

NASA Astrophysics Data System (ADS)

Zhang, Ziyang; Pitwon, Richard C. A.; Feng, Jing

2016-03-01

In the last decade polymer photonics has witnessed a tremendous boost in research efforts and practical applications. Polymer materials can be engineered to exhibit unique optical and electrical properties. Extremely transparent and reliable passive optical polymers have been made commercially available and paved the ground for the development of various waveguide components. Advancement in the research activities regarding the synthesis of active polymers has enabled devices such as ultra-fast electro-optic modulators, efficient white light emitting diodes, broadband solar cells, flexible displays, and so on. The fabrication technology is not only fast and cost-effective, but also provides flexibility and broad compatibility with other semiconductor processing technologies. Reports show that polymers have been integrated in photonic platforms such as silicon-on-insulator (SOI), III-V semiconductors, and silica PLCs, and vice versa, photonic components made from a multitude of materials have been integrated, in a heterogeneous/hybrid manner, in polymer photonic platforms.

High-speed microwave photonic switch for millimeter-wave ultra-wideband signal generation.

PubMed

Wang, Li Xian; Li, Wei; Zheng, Jian Yu; Wang, Hui; Liu, Jian Guo; Zhu, Ning Hua

2013-02-15

We propose a scheme for generating millimeter-wave (MMW) ultra-wideband (UWB) signal that is free from low-frequency components and a residual local oscillator. The system consists of two cascaded polarization modulators and is equivalent to a high-speed microwave photonic switch, which truncates a sinusoidal MMW into short pulses. The polarity switchability of the generated MMW-UWB pulse is also demonstrated.

pH-controlled silicon nanowires fluorescence switch

NASA Astrophysics Data System (ADS)

Mu, Lixuan; Shi, Wensheng; Zhang, Taiping; Zhang, Hongyan; She, Guangwei

2010-08-01

Covalently immobilizing photoinduced electronic transfer (PET) fluorophore 3-[N, N-bis(9-anthrylmethyl)amino]-propyltriethoxysilane (DiAN) on the surface of silicon nanowires (SiNWs) resulted a SiNWs-based fluorescence switch. This fluorescence switch is operated by adjustment of the acidity of the environment and exhibits sensitive response to pH at the range from 8 to 10. Such response is attributed to the effect of pH on the PET process. The successful combination of logic switch and SiNWs provides a rational approach to assemble different logic molecules on SiNWs for realization of miniaturization and modularization of switches and logic devices.

Nonlinear Magnetic Dynamics and The Switching Phase Diagrams in Spintronic Devices

NASA Astrophysics Data System (ADS)

Yan, Shu

Spin-transfer torque induced magnetic switching, by which the spin-polarized current transfers its magnetic moment to the ferromagnetic layer and changes its magnetization, holds great promise towards faster and smaller magnetic bits in data-storage applications due to the lower power consumption and better scalability. We propose an analytic approach which can be used to calculate the switching phase diagram of a nanomagnetic system in the presence of both magnetic field and spin-transfer torque in an exact fashion. This method is applied to the study of switching conditions for the uniaxial, single domain magnetic layers in different spin-transfer devices. In a spin valve with spin polarization collinear with the easy axis, we get a modified Stoner-Wohlfarth astroid which represents many of the features that have been found in experiment. It also shows a self-crossing boundary and demonstrates a region with three stable equilibria. We demonstrate that the region of stable equilibria with energy near the maximum can be reached only through a narrow bottleneck in the field space, which sets a stringent requirement for magnetic field alignment in the experiments. Switching diagrams are then calculated for the setups with magnetic field not perfectly aligned with the easy axis. In a ferromagnet-heavy-metal bilayer device with strong spin Hall effect, the in plane current becomes spin-polarized and transfers its magnetic moment to the ferromagnetic layer by diffusion. The three-dimensional asymmetric phase diagram is calculated. In the case that the external field is confined in the vertical plane defined by the direction of the current and the easy axis, the spin-transfer torque shifts the conventional in-plane (IP) equilibria within the same plane, and also creates two out-of-plane (OOP) equilibria, one of which can be stable. The threshold switching currents for IP switching and OOP switching are discussed. We also address the magnetic switching processes. Damping switching and precessional switching are two different switching types that are typically considered in recent studies. In the damping mode the switching is slow and heavily depends on the initial deviation, while in the precessional mode the accurate manipulation of the field or current pulse is required. We propose a switching scenario for a fast and reliable switching by taking advantage of the out-of-plane stable equilibrium in the SHE induced magnetic switching. The magnetization is first driven by a pulse of field and current towards the OOP equilibrium without precession. Since it is in the lower half of the unit sphere, no backwards pulse is required for a complete switching. This indicates a potentially feasible method of reliable ultra-fast magnetic control.

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

PubMed

Wang, Wanjun; Zhou, Haifeng; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2012-06-15

We report on an experimental 3×3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1×N and N×N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3×3 switching functionality is demonstrated at a wavelength of 1.55 μm, with an average cross talk of -11.1  dB and a power consumption of 97.5 mW.

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

PubMed

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Submicron bidirectional all-optical plasmonic switches

PubMed Central

Chen, Jianjun; Li, Zhi; Zhang, Xiang; Xiao, Jinghua; Gong, Qihuang

2013-01-01

Ultra-small all-optical switches are of importance in highly integrated optical communication and computing networks. However, the weak nonlinear light-matter interactions in natural materials present an enormous challenge to realize efficiently switching for the ultra-short interaction lengths. Here, we experimentally demonstrate a submicron bidirectional all-optical plasmonic switch with an asymmetric T-shape single slit. Sharp asymmetric spectra as well as significant field enhancements (about 18 times that in the conventional slit case) occur in the symmetry-breaking structure. Consequently, both of the surface plasmon polaritons propagating in the opposite directions on the metal surface are all-optically controlled inversely at the same time with the on/off switching ratios of >6 dB for the device lateral dimension of <1 μm. Moreover, in such a submicron structure, the coupling of free-space light and the on-chip bidirectional switching are integrated together. This submicron bidirectional all-optical switch may find important applications in the highly integrated plasmonic circuits. PMID:23486232

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

PubMed

Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

2016-07-29

Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

Graphene-assisted ultra-compact polarization splitter and rotator with an extended bandwidth.

PubMed

Zhang, Tian; Ke, Xianmin; Yin, Xiang; Chen, Lin; Li, Xun

2017-09-22

The high refraction-index contrast between silicon and the surrounding cladding makes silicon-on-insulator devices highly polarization-dependent. However, it is greatly desirable for many applications to address the issue of polarization dependence in silicon photonics. Here, a novel ultra-compact polarization splitter and rotator (PSR), constructed with an asymmetrical directional coupler consisting of a rib silicon waveguide and a graphene-embedded rib silicon waveguide (GERSW), on a silicon-on-insulator platform is proposed and investigated. By taking advantage of the large modulation of the effective refractive index of the TE mode for the GERSW by tuning the chemical potential of graphene, the phase matching condition can be well satisfied over a wide spectral band. The presented result demonstrates that for a 7-layer-graphene-embedded PSR with a coupling length of 11.1 μm, a high TM-to-TE conversion efficiency (>-0.5 dB) can be achieved over a broad bandwidth from 1516 to 1602 nm.

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp.

PubMed

Chen, Hui-Wen; Peters, Jonathan D; Bowers, John E

2011-01-17

We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

On-chip broadband silicon thermo-optic 2☓2 four-mode optical switch for optical space and local mode switching.

PubMed

Zhou, Ting; Jia, Hao; Ding, Jianfeng; Zhang, Lei; Fu, Xin; Yang, Lin

2018-04-02

We present a silicon thermo-optic 2☓2 four-mode optical switch optimized for optical space switching plus local optical mode switching. Four asymmetric directional couplers are utilized for mode multiplexing and de-multiplexing. Sixteen 2☓2 single-mode optical switches based on balanced thermally tunable Mach-Zehnder interferometers are exploited for switching function. The measured insertion losses are 8.0~12.2 dB and the optical signal-to-noise ratios are larger than 11.2 dB in the wavelength range of 1525~1565 nm. The optical links in "all-bar" and "all-cross" states exhibit less than 2.0 dB and 1.4 dB power penalties respectively below 10 -9 bit error rates for 40 Gbps data transmission.

Fast packet switch architectures for broadband integrated services digital networks

NASA Technical Reports Server (NTRS)

Tobagi, Fouad A.

1990-01-01

Background information on networking and switching is provided, and the various architectures that have been considered for fast packet switches are described. The focus is solely on switches designed to be implemented electronically. A set of definitions and a brief description of the functionality required of fast packet switches are given. Three basic types of packet switches are identified: the shared-memory, shared-medium, and space-division types. Each of these is described, and examples are given.

Graphene-based active slow surface plasmon polaritons

PubMed Central

Lu, Hua; Zeng, Chao; Zhang, Qiming; Liu, Xueming; Hossain, Md Muntasir; Reineck, Philipp; Gu, Min

2015-01-01

Finding new ways to control and slow down the group velocity of light in media remains a major challenge in the field of optics. For the design of plasmonic slow light structures, graphene represents an attractive alternative to metals due to its strong field confinement, comparably low ohmic loss and versatile tunability. Here we propose a novel nanostructure consisting of a monolayer graphene on a silicon based graded grating structure. An external gate voltage is applied to graphene and silicon, which are separated by a spacer layer of silica. Theoretical and numerical results demonstrate that the structure exhibits an ultra-high slowdown factor above 450 for the propagation of surface plasmon polaritons (SPPs) excited in graphene, which also enables the spatially resolved trapping of light. Slowdown and trapping occur in the mid-infrared wavelength region within a bandwidth of ~2.1 μm and on a length scale less than 1/6 of the operating wavelength. The slowdown factor can be precisely tuned simply by adjusting the external gate voltage, offering a dynamic pathway for the release of trapped SPPs at room temperature. The presented results will enable the development of highly tunable optoelectronic devices such as plasmonic switches and buffers. PMID:25676462

Nano- and picosecond 3 μm Er: YSGG lasers using InAs as passive Q-switchers and mode-lockers

NASA Astrophysics Data System (ADS)

Vodopyanov, K. L.; Lukashev, A. V.; Phillips, C. C.

1993-01-01

Recent results are reported using ultra-thin molecular beam epitaxy (MBE)-grown InAs epilayers on GaAs substrates as passive shutters for 3 μm Er: YSGG lasers ( λ = 2.8 μm). The laser photon energy is 27% higher than the InAs bandgap at 300 K and bleaching occurs due to a band filling effect with a fast recovery time of < 100 ps. Depending on the resonator geometry two modes of operation can be achieved: Q-switched with pulse duration of 35 ns and 5-6 mJ energy (TEM 00 mode) and a Q-switched/mode-locked regime with an output in the form of a train of 30 pulses separated by a 4.3 ns interval, 0.25 mJ energy per spike and 30-50 ps pulse duration in a TEM 00-mode. The latter are the shortest pulses obtained with this lasing medium to date.

Electro-optical logic gates based on graphene-silicon waveguides

NASA Astrophysics Data System (ADS)

Chen, Weiwei; Yang, Longzhi; Wang, Pengjun; Zhang, Yawei; Zhou, Liqiang; Yang, Tianjun; Wang, Yang; Yang, Jianyi

2016-08-01

In this paper, designs of electro-optical AND/NAND, OR/ NOR, XOR/XNOR logic gates based on cascaded silicon graphene switches and regular 2×1 multimode interference combiners are presented. Each switch consists of a Mach-Zehnder interferometer in which silicon slot waveguides embedded with graphene flakes are designed for phase shifters. High-speed switching function is achieved by applying an electrical signal to tune the Fermi levels of graphene flakes causing the variation of modal effective index. Calculation results show the crosstalk in the proposed optical switch is lower than -22.9 dB within a bandwidth from 1510 nm to 1600 nm. The designed six electro-optical logic gates with the operation speed of 10 Gbit/s have a minimum extinction ratio of 35.6 dB and a maximum insertion loss of 0.21 dB for transverse electric modes at 1.55 μm.

Variable temperature performance of a fully screen printed transistor switch

NASA Astrophysics Data System (ADS)

Zambou, Serges; Magunje, Batsirai; Rhyme, Setshedi; Walton, Stanley D.; Idowu, M. Florence; Unuigbe, David; Britton, David T.; Härting, Margit

2016-12-01

This article reports on the variable temperature performance of a flexible printed transistor which works as a current driven switch. In this work, electronic ink is formulated from nanostructured silicon produced by milling polycrystalline silicon. The study of the silicon active layer shows that its conductivity is based on thermal activation of carriers, and could be used as active layers in active devices. We further report on the transistors switching operation and their electrical performance under variable temperature. The reliability of the transistors at constant current bias was also investigated. Analysis of the electrical transfer characteristics from 340 to 10 K showed that the printed devices' current ON/OFF ratio increases as temperature decreases making it a better switch at lower temperatures. A constant current bias on a terminal for up to six hours shows extraordinary stability in electrical performance of the device.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode

DTIC Science & Technology

operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations also estimated the effect of solder layers on temperature in the device....Thermal simulations were used to calculate temperatures in a silicon carbide (SiC) Insulated -Gate Bipolar Transistor (IGBT),simulating device

Selenium bond decreases ON resistance of light-activated switch

NASA Technical Reports Server (NTRS)

1965-01-01

Vitrified amorphous selenium bond decreases the ON resistance of a gallium arsenide-silicon light-activated, low-level switch. The switch is used under a pulse condition to prolong switch life and minimize errors due to heating, devitrification, and overdrawing.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Development and ultra-structure of an ultra-thin silicone epidermis of bioengineered alternative tissue.

PubMed

Wessels, Quenton; Pretorius, Etheresia

2015-08-01

Burn wound care today has a primary objective of temporary or permanent wound closure. Commercially available engineered alternative tissues have become a valuable adjunct to the treatment of burn injuries. Their constituents can be biological, alloplastic or a combination of both. Here the authors describe the aspects of the development of a siloxane epidermis for a collagen-glycosaminoglycan and for nylon-based artificial skin replacement products. A method to fabricate an ultra-thin epidermal equivalent is described. Pores, to allow the escape of wound exudate, were punched and a tri-filament nylon mesh or collagen scaffold was imbedded and silicone polymerisation followed at 120°C for 5 minutes. The ultra-structure of these bilaminates was assessed through scanning electron microscopy. An ultra-thin biomedical grade siloxane film was reliably created through precision coating on a pre-treated polyethylene terephthalate carrier. © 2013 The Authors. International Wound Journal © 2013 Medicalhelplines.com Inc and John Wiley & Sons Ltd.

Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

NASA Astrophysics Data System (ADS)

Vogt, Dominik Walter; Leonhardt, Rainer

2018-05-01

We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

Research and preparation of ultra purity silicon tetrachloride

NASA Astrophysics Data System (ADS)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Yang, Dian; Li, Yunhao; Guo, Shuhu

2017-10-01

This article demonstrated a technology for producing ultra-purity silicon tetrachloride, which using the high purity SiCl4 as raw material through the method of combination ray reaction with purification. This technology could remove metal impurities and compounds impurities contained hydrogen effectively. The purity of product prepared by this technology can reach at 99.9999%, content of metal impurities can be low at 0.3PPb, meeting the requirement of industry easily. This technology has the advantages of simple process, continuous operation, and stable performance.

Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor

NASA Astrophysics Data System (ADS)

Sakamoto, Toshitsugu; Tada, Munehiro; Tsuji, Yukihide; Makiyama, Hideki; Hasegawa, Takumi; Yamamoto, Yoshiki; Okanishi, Shinobu; Banno, Naoki; Miyamura, Makoto; Okamoto, Koichiro; Iguchi, Noriyuki; Ogasahara, Yasuhiro; Oda, Hidekazu; Kamohara, Shiro; Yamagata, Yasushi; Sugii, Nobuyuki; Hada, Hiromitsu

2015-04-01

We developed an atom-switch read-only memory (ROM) fabricated on silicon-on-thin-buried-oxide (SOTB) for use in a low-power microcontroller for the first time. An atom switch with a low programming voltage and large ON/OFF conductance ratio is suitable for low-power nonvolatile memory. The atom-switch ROM using an SOTB transistor uses a 0.34-1.2 V operating voltage and 12 µA/MHz active current (or 4.5 µW/MHz active power). Furthermore, the sleep current is as low as 0.4 µA when a body bias voltage is applied to the SOTB.

3  ×  3 optical switch by exploiting vortex beam emitters based on silicon microrings with superimposed gratings.

PubMed

Scaffardi, Mirco; Malik, Muhammad N; Lazzeri, Emma; Klitis, Charalambos; Meriggi, Laura; Zhang, Ning; Sorel, Marc; Bogoni, Antonella

2017-10-01

A silicon-on-insulator microring with three superimposed gratings is proposed and characterized as a device enabling 3×3 optical switching based on orbital angular momentum and wavelength as switching domains. Measurements show penalties with respect to the back-to-back of <1  dB at a bit error rate of 10 -9 for OOK traffic up to 20 Gbaud. Different switch configuration cases are implemented, with measured power penalty variations of less than 0.5 dB at bit error rates of 10 -9 . An analysis is also carried out to highlight the dependence of the number of switch ports on the design parameters of the multigrating microring.

A 66pW Discontinuous Switch-Capacitor Energy Harvester for Self-Sustaining Sensor Applications

PubMed Central

Wu, Xiao; Shi, Yao; Jeloka, Supreet; Yang, Kaiyuan; Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-01-01

We present a discontinuous harvesting approach for switch capacitor DC-DC converters that enables ultra-low power energy harvesting. By slowly accumulating charge on an input capacitor and then transferring it to a battery in burst-mode, switching and leakage losses in the DC-DC converter can be optimally traded-off with the loss due to non-ideal MPPT operation. The harvester uses a 15pW mode controller, an automatic conversion ratio modulator, and a moving sum charge pump for low startup energy upon a mode switch. In 180nm CMOS, the harvester achieves >40% end-to-end efficiency from 113pW to 1.5μW with 66pW minimum input power, marking a >10× improvement over prior ultra-low power harvesters. PMID:28392977

A 66pW Discontinuous Switch-Capacitor Energy Harvester for Self-Sustaining Sensor Applications.

PubMed

Wu, Xiao; Shi, Yao; Jeloka, Supreet; Yang, Kaiyuan; Lee, Inhee; Sylvester, Dennis; Blaauw, David

2016-06-01

We present a discontinuous harvesting approach for switch capacitor DC-DC converters that enables ultra-low power energy harvesting. By slowly accumulating charge on an input capacitor and then transferring it to a battery in burst-mode, switching and leakage losses in the DC-DC converter can be optimally traded-off with the loss due to non-ideal MPPT operation. The harvester uses a 15pW mode controller, an automatic conversion ratio modulator, and a moving sum charge pump for low startup energy upon a mode switch. In 180nm CMOS, the harvester achieves >40% end-to-end efficiency from 113pW to 1.5μW with 66pW minimum input power, marking a >10× improvement over prior ultra-low power harvesters.

Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiOx Memory.

PubMed

Kwon, Soonbang; Jang, Seonghoon; Choi, Jae-Wan; Choi, Sanghyeon; Jang, Sukjae; Kim, Tae-Wook; Wang, Gunuk

2017-12-13

The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiO x memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiO x memory junction with a StcNP of pore depth of ∼75 nm and a bottom diameter of ∼10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiO x memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electromigration.

Reusable fast opening switch

DOEpatents

Van Devender, J.P.; Emin, D.

1983-12-21

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Reusable fast opening switch

DOEpatents

Van Devender, John P.; Emin, David

1986-01-01

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Compact, low-loss and low-power 8×8 broadband silicon optical switch.

PubMed

Chen, Long; Chen, Young-kai

2012-08-13

We demonstrated a 8×8 broadband optical switch on silicon for transverse-electrical polarization using a switch-and-selector architecture. The switch has a footprint of only 8 mm × 8 mm, minimum on-chip loss of about 4 dB, and a port-to-port insertion loss variation of only 0.8 dB near some spectral regions. The port-to-port isolation is above 30 dB over the entire 80-nm-wide spectral range or above 45 dB near the central 30 nm. We also demonstrated a switching power of less than 1.5 mW per element and a speed of 2 kHz, and estimated the upper bound of total power consumption to be less than 70 mW even without optimization of the default state of the individual switch elements.

A low-latency optical switch architecture using integrated μm SOI-based contention resolution and switching

NASA Astrophysics Data System (ADS)

Mourgias-Alexandris, G.; Moralis-Pegios, M.; Terzenidis, N.; Cherchi, M.; Harjanne, M.; Aalto, T.; Vyrsokinos, K.; Pleros, N.

2018-02-01

The urgent need for high-bandwidth and high-port connectivity in Data Centers has boosted the deployment of optoelectronic packet switches towards bringing high data-rate optics closer to the ASIC, realizing optical transceiver functions directly at the ASIC package for high-rate, low-energy and low-latency interconnects. Even though optics can offer a broad range of low-energy integrated switch fabrics for replacing electronic switches and seamlessly interface with the optical I/Os, the use of energy- and latency-consuming electronic SerDes continues to be a necessity, mainly dictated by the absence of integrated and reliable optical buffering solutions. SerDes undertakes the role of optimally synergizing the lower-speed electronic buffers with the incoming and outgoing optical streams, suggesting that a SerDes-released chip-scale optical switch fabric can be only realized in case all necessary functions including contention resolution and switching can be implemented on a common photonic integration platform. In this paper, we demonstrate experimentally a hybrid Broadcast-and-Select (BS) / wavelength routed optical switch that performs both the optical buffering and switching functions with μm-scale Silicon-integrated building blocks. Optical buffering is carried out in a silicon-integrated variable delay line bank with a record-high on-chip delay/footprint efficiency of 2.6ns/mm2 and up to 17.2 nsec delay capability, while switching is executed via a BS design and a silicon-integrated echelle grating, assisted by SOA-MZI wavelength conversion stages and controlled by a FPGA header processing module. The switch has been experimentally validated in a 3x3 arrangement with 10Gb/s NRZ optical data packets, demonstrating error-free switching operation with a power penalty of <5dB.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Silicon millimetre-wave integrated-circuit (SIMMWIC) SPST switch

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-10-01

The first silicon millimetre-wave integrated circuit (SIMMWIC) has been successfully fabricated. This circuit is a monolithic SPST switch with a 3 dB bandwidth of 20 percent and a minimum isolation of 21.6 dB across the band (centre frequency is 36.75 GHz). This monolithic circuit is a low-cost reproducible building block for all millimetre-wave control applications.

Method for fabricating pixelated silicon device cells

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

2015-08-18

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

NASA Astrophysics Data System (ADS)

Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

2018-05-01

The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch.

PubMed

Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Aono, Masakazu; Hasegawa, Tsuyoshi

2015-10-21

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

8-channel prototype of SALT readout ASIC for Upstream Tracker in the upgraded LHCb experiment

NASA Astrophysics Data System (ADS)

Abellan Beteta, C.; Bugiel, S.; Dasgupta, R.; Firlej, M.; Fiutowski, T.; Idzik, M.; Kane, C.; Moron, J.; Swientek, K.; Wang, J.

2017-02-01

SALT is a new 128-channel readout ASIC for silicon strip detectors in the upgraded Upstream Tracker of the LHCb experiment. It will extract and digitise analogue signals from the sensor, perform digital processing and transmit serial output data. SALT is designed in CMOS 130 nm process and uses a novel architecture comprising of an analogue front-end and an ultra-low power (<0.5 mW) fast (40 MSps) sampling 6-bit ADC in each channel. An 8-channel prototype (SALT8), comprising all important functionalities was designed, fabricated and tested. A full 128-channel version was also submitted. The design and test results of the SALT8 prototype are presented showing its full functionality.

Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate

NASA Astrophysics Data System (ADS)

Qin, Guoxuan; Yuan, Hao-Chih; Celler, George K.; Ma, Jianguo; Ma, Zhenqiang

2011-10-01

This letter presents radio frequency (RF) characterization of flexible microwave switches using single-crystal silicon nanomembranes (SiNMs) on plastic substrate under various uniaxial mechanical tensile bending strains. The flexible switches shows significant/negligible performance enhancement on strains under on/off states from dc to 10 GHz. Furthermore, an RF/microwave strain equivalent circuit model is developed and reveals the most influential factors, and un-proportional device parameters change with bending strains. The study demonstrates that flexible microwave single-crystal SiNM switches, as a simple circuit example towards the goal of flexible monolithic microwave integrated circuits, can be properly operated and modeled under mechanical bending conditions.

Electro-optical full-adder/full-subtractor based on graphene-silicon switches

NASA Astrophysics Data System (ADS)

Zivarian, Hossein; Zarifkar, Abbas; Miri, Mehdi

2018-01-01

A compact footprint, low-power consumption, and high-speed operation electro-optical full-adder/full-subtractor based on graphene-silicon electro-optical switches is demonstrated. Each switch consists of a Mach-Zehnder interferometer in which few-layer graphene is embedded in a silicon slot waveguide to construct phase shifters. The presented structure can be used as full-adder and full-subtractor simultaneously. The analysis of various factors such as extinction ratio, power consumption, and operation speed has been presented. As will be shown, the proposed electro-optical switch has a minimum extinction ratio of 36.21 dB, maximum insertion loss about 0.18 dB, high operation speed of 180 GHz, and is able to work with a low applied voltage about 1.4 V. Also, the extinction ratio and insertion loss of the full-adder/full-subtractor are about 30 and 1.5 dB, respectively, for transfer electric modes at telecommunication wavelength of 1.55 μm.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Exploration of MEMS G-Switches at 100-10,000 G-Levels with Redundancy

DTIC Science & Technology

2014-04-01

Muntz, A.D. Ketsdever, “Kinetic Modeling of Temperature -Driven Flows in Short Microchannels,” International Journal of Thermal Sciences, Vol. 45, No...switches silicon DRIE Unclassified Unclassified Unclassified UU 59 Suhithi Peiris 703-767-4732 CONVERSION...designed. The devices were fabricated on low resistivity (ɘ.01 Ω-cm) silicon on insulator wafers (SOI) using standard micromachining techniques. Fixed

CREE: Making the Switch

ScienceCinema

Grider, David; Palmer, John

2018-05-11

CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

Silicon waveguide optical switch with embedded phase change material.

PubMed

Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M

2017-10-30

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

Optical MEMS platform for low-cost on-chip integration of planar light circuits and optical switching

NASA Astrophysics Data System (ADS)

German, Kristine A.; Kubby, Joel; Chen, Jingkuang; Diehl, James; Feinberg, Kathleen; Gulvin, Peter; Herko, Larry; Jia, Nancy; Lin, Pinyen; Liu, Xueyuan; Ma, Jun; Meyers, John; Nystrom, Peter; Wang, Yao Rong

2004-07-01

Xerox Corporation has developed a technology platform for on-chip integration of latching MEMS optical waveguide switches and Planar Light Circuit (PLC) components using a Silicon On Insulator (SOI) based process. To illustrate the current state of this new technology platform, working prototypes of a Reconfigurable Optical Add/Drop Multiplexer (ROADM) and a l-router will be presented along with details of the integrated latching MEMS optical switches. On-chip integration of optical switches and PLCs can greatly reduce the size, manufacturing cost and operating cost of multi-component optical equipment. It is anticipated that low-cost, low-overhead optical network products will accelerate the migration of functions and services from high-cost long-haul markets to price sensitive markets, including networks for metropolitan areas and fiber to the home. Compared to the more common silica-on-silicon PLC technology, the high index of refraction of silicon waveguides created in the SOI device layer enables miniaturization of optical components, thereby increasing yield and decreasing cost projections. The latching SOI MEMS switches feature moving waveguides, and are advantaged across multiple attributes relative to alternative switching technologies, such as thermal optical switches and polymer switches. The SOI process employed was jointly developed under the auspice of the NIST APT program in partnership with Coventor, Corning IntelliSense Corp., and MicroScan Systems to enable fabrication of a broad range of free space and guided wave MicroOptoElectroMechanical Systems (MOEMS).

Analog front-end design of the STS/MUCH-XYTER2—full size prototype ASIC for the CBM experiment

NASA Astrophysics Data System (ADS)

Kleczek, Rafal

2017-01-01

The design of the analog front-end of the STS/MUCH-XYTER2 ASIC, a full-size prototype chip for the Silicon Tracking System (STS, based on double-sided silicon strip sensors) and Muon Chamber (MUCH, based on gas sensors) detectors is presented. The ASIC contains 128 charge processing channels, each built of a charge sensitive amplifier, a polarity selection circuit and two pulse shaping amplifiers forming two parallel signal paths. The first path is used for timing measurement with a fast discriminator. The second path allows low-noise amplitude measurement with a 5-bit continuous-time flash ADC. Different operating conditions and constraints posed by two target detectors' applications require front-end electronics flexibility to meet extended system-wise requirements. The presented circuit implements switchable shaper peaking time, gain switching and trimming, input amplifier pulsed reset circuit, fail-safe measures. The power consumption is scalable (for the STS and the MUCH modes), but limited to 10 mW/channel.

Ultra-compact, flat-top demultiplexer using anti-reflection contra-directional couplers for CWDM networks on silicon.

PubMed

Shi, Wei; Yun, Han; Lin, Charlie; Greenberg, Mark; Wang, Xu; Wang, Yun; Fard, Sahba Talebi; Flueckiger, Jonas; Jaeger, Nicolas A F; Chrostowski, Lukas

2013-03-25

Wavelength-division-multiplexing (WDM) networks with wide channel grids and bandwidths are promising for low-cost, low-power optical interconnects. Wide-bandwidth, single-band (i.e., no free-spectral range) add-drop filters have been developed on silicon using anti-reflection contra-directional couplers with out-of-phase Bragg gratings. Using such filter components, we demonstrate a 4-channel, coarse-WDM demultiplexer with flat passbands of up to 13 nm and an ultra-compact size of 1.2 × 10(-3) mm(2).

Tunable plasmon-induced absorption effects in a graphene-based waveguide coupled with graphene ring resonators

NASA Astrophysics Data System (ADS)

Huang, Pei-Nian; Xia, Sheng-Xuan; Fu, Guang-Lai; Liang, Mei-Zhen; Qin, Meng; Zhai, Xiang; Wang, Ling-Ling

2018-03-01

In this paper, we propose a structure composed of two graphene waveguides and dual coupled graphene ring resonators (GRRs) to achieve a plasmon-induced absorption (PIA) effect. A three-level plasmonic system and a temporal coupled mode theory (CMT) are utilized to verify the simulation results. Moreover, a double-window-PIA effect can be conveniently attained by introducing another GRR with proper parameters to meet more specific acquirement in optical modulation process. The pronounced PIA resonances can be tuned in a number of ways, such as by adjusting the coupling distance between the GRRs and the couplings between the GRR and the waveguide, and tuning the radius and the Fermi energy of the GRRs. Besides, the produced PIA effect shows a high group delay up to - 1 . 87 ps, exhibiting a particularly prominent fast-light feature. Our results have potential applications in the realization of THz-integrated spectral control and graphene plasmonic devices such as sensors, filters, ultra-fast optical switches and so on.

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

NASA Astrophysics Data System (ADS)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

On-board B-ISDN fast packet switching architectures. Phase 2: Development. Proof-of-concept architecture definition report

NASA Technical Reports Server (NTRS)

Shyy, Dong-Jye; Redman, Wayne

1993-01-01

For the next-generation packet switched communications satellite system with onboard processing and spot-beam operation, a reliable onboard fast packet switch is essential to route packets from different uplink beams to different downlink beams. The rapid emergence of point-to-point services such as video distribution, and the large demand for video conference, distributed data processing, and network management makes the multicast function essential to a fast packet switch (FPS). The satellite's inherent broadcast features gives the satellite network an advantage over the terrestrial network in providing multicast services. This report evaluates alternate multicast FPS architectures for onboard baseband switching applications and selects a candidate for subsequent breadboard development. Architecture evaluation and selection will be based on the study performed in phase 1, 'Onboard B-ISDN Fast Packet Switching Architectures', and other switch architectures which have become commercially available as large scale integration (LSI) devices.

Evaluation of Fairchild's Gate Drive Optocoupler, Type FOD3150, Under Wide Temperature Operation

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Adhad; Panko, Scott

2010-01-01

An optocoupler is a semiconductor device that is used to transfer a signal between different parts of a circuit that need to be electrically isolated from one another - for example, where a high voltage is to be switched with a low voltage control signal. Optocouplers often can be used in place of relays. These optocouplers utilize an infrared LED (light emitting diode) and a photodetector such as a silicon controlled rectifier or photosensitive silicon diode for the transfer of the electronic signal between components of a circuit by means of a short optical transmission channel. For maximum coupling, the wave-length responses of the LED and the detector should be very similar. In switch-mode power supply applications, optocouplers offer advantages over transformers by virtue of simpler circuit design, reduced weight, and DC coupling capability. The effects of extreme temperature exposure and thermal cycling on the performance of a commercial-off-the-shelf (COTS) optocoupler, Fairchild FOD3150, were evaluated in this work. This 1.0 A output current, high noise immunity gate drive optocoupler utilizes an aluminum gallium arsenide (AlGaAs) LED, is capable of driving most 800V/20A IGBT/MOSFETs, and is suited for fast switching in motor control inverter applications and high performance power systems. Some of the specifications of the isolator chip are listed. The device was evaluated in terms of output response, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays (using a 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PLH)) transitions). The output supply current was also obtained. These parameters were recorded at various test temperatures between -190 C and +110 C.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George C. (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1982-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fluidized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Fluidized bed silicon deposition from silane

NASA Technical Reports Server (NTRS)

Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

1984-01-01

A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Feasibility study of SiGHT: a novel ultra low background photosensor for low temperature operation

DOE PAGES

Wang, Y.; Fan, A.; Fiorillo, G.; ...

2017-02-27

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

Trench formation in <110> silicon for millimeter-wave switching device

NASA Astrophysics Data System (ADS)

Datta, P.; Kumar, Praveen; Nag, Manoj; Bhattacharya, D. K.; Khosla, Y. P.; Dahiya, K. K.; Singh, D. V.; Venkateswaran, R.; Kumar, Devender; Kesavan, R.

1999-11-01

Anisotropic etching using alkaline solution has been adopted to form trenches in silicon while fabricating surface oriented bulk window SPST switches. An array pattern has been etched on silicon with good control on depth of trenches. KOH-water solution is seen to yield a poor surface finish. Use of too much of additive like isopropyl alcohol improves the surface condition but distorts the array pattern due to loss of anisotropy. However, controlled use of this additive during the last phase of trench etching is found to produce trenched arrays with desired depth, improved surface finish and minimum distortion of lateral dimensions.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Planar MEMS bio-chip for recording ion-channel currents in biological cells

NASA Astrophysics Data System (ADS)

Pandey, Santosh; Ferdous, Zannatul; White, Marvin H.

2003-10-01

We describe a planar MEMS silicon structure to record ion-channel currents in biological cells. The conventional method of performing an electrophysiological experiment, 'patch-clamping,' employs a glass micropipette. Despite careful treatments of the micropipette tip, such as fire polishing and surface coating, the latter is a source of thermal noise because of its inherent, tapered, conical structure, which gives rise to a large pipette resistance. This pipette resistance, when coupled with the self-capacitance of the biological cell, limits the available bandwidth and processing of fast transient, ion channel current pulses. In this work, we reduce considerably the pipette resistance with a planar micropipette on a silicon chip to permit the resolution of sub-millisecond, ion-channel pulses. We discuss the design topology of the device, describe the fabrication sequence, and highlight important critical issues. The design of an integrated on-chip CMOS instrumentation amplifier is described, which has a low-noise front-end, input-offset cancellation, correlated double sampling (CDS), and an ultra-high gain in the order of 1012V/A.

Optically controlled redshift switching effects in hybrid fishscale metamaterials

NASA Astrophysics Data System (ADS)

Wang, Yu; Zhu, Jinwei; Zhang, Hao; Zhang, Wenxing; Dong, Guohua; Ye, Peng; Lv, Tingting; Zhu, Zheng; Li, Yuxiang; Guan, Chunying; Shi, Jinhui

2018-05-01

We numerically demonstrate optically controlled THz response in a hybrid fishscale metamaterial with embedded photoconductive silicon at oblique incidence of TE wave. The oblique incidence allows excitation of Fano-type trapped mode resonance in a 2-fold rotational symmetric metamaterial. The hybrid fishscale metamaterial exhibits an optically controlled redshift switching effect in the THz range. The switching effect is dominated by the conductivity of the silicon instead of mechanically adjusting angles of incidence. The tuning frequency range is up to 0.3THz with a large modulation depth and high transmission in the "ON" state. The fishscale metamaterial-based switching has been experimentally verified by its microwave counterpart integrated by variable resistors. Our work provides an alternative route to realize tunable Fano-type response in metamaterials and is of importance to active manipulation, sensing and switching of THz waves in practical applications.

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

Great Thermal Conductivity Enhancement of Silicone Composite with Ultra-Long Copper Nanowires.

PubMed

Zhang, Liye; Yin, Junshan; Yu, Wei; Wang, Mingzhu; Xie, Huaqing

2017-12-01

In this paper, ultra-long copper nanowires (CuNWs) were successfully synthesized at a large scale by hydrothermal reduction of divalent copper ion using oleylamine and oleic acid as dual ligands. The characteristic of CuNWs is hard and linear, which is clearly different from graphene nanoplatelets (GNPs) and multi-wall carbon nanotubes (MWCNTs). The thermal properties and models of silicone composites with three nanomaterials have been mainly researched. The maximum of thermal conductivity enhancement is up to 215% with only 1.0 vol.% CuNW loading, which is much higher than GNPs and MWCNTs. It is due to the ultra-long CuNWs with a length of more than 100 μm, which facilitates the formation of effective thermal-conductive networks, resulting in great enhancement of thermal conductivity.

Great Thermal Conductivity Enhancement of Silicone Composite with Ultra-Long Copper Nanowires

NASA Astrophysics Data System (ADS)

Zhang, Liye; Yin, Junshan; Yu, Wei; Wang, Mingzhu; Xie, Huaqing

2017-07-01

In this paper, ultra-long copper nanowires (CuNWs) were successfully synthesized at a large scale by hydrothermal reduction of divalent copper ion using oleylamine and oleic acid as dual ligands. The characteristic of CuNWs is hard and linear, which is clearly different from graphene nanoplatelets (GNPs) and multi-wall carbon nanotubes (MWCNTs). The thermal properties and models of silicone composites with three nanomaterials have been mainly researched. The maximum of thermal conductivity enhancement is up to 215% with only 1.0 vol.% CuNW loading, which is much higher than GNPs and MWCNTs. It is due to the ultra-long CuNWs with a length of more than 100 μm, which facilitates the formation of effective thermal-conductive networks, resulting in great enhancement of thermal conductivity.

Ultra-flattened nearly-zero dispersion and ultrahigh nonlinear slot silicon photonic crystal fibers with ultrahigh birefringence

NASA Astrophysics Data System (ADS)

Liao, Jianfei; Xie, Yingmao; Wang, Xinghua; Li, Dongbo; Huang, Tianye

2017-07-01

A slot silicon photonic crystal fiber (PCF) is proposed to simultaneously achieve ultrahigh birefringence, large nonlinearity and ultra-flattened nearly-zero dispersion over a wide wavelength range. By taking advantage on the slot effect, ultrahigh birefringence up to 0.0736 and ultrahigh nonlinear coefficient up to 211.48 W-1 m-1 for quasi-TE mode can be obtained at the wavelength of 1.55 μm. Moreover, ultra-flattened dispersion of 0.49 ps/(nm km) for quasi-TE mode can be achieved over a 180 nm wavelength range with low dispersion slope of 1.85 × 10-3 ps/(nm2 km) at 1.55 μm. Leveraging on these advantages, the proposed slot PCF has great potential for efficient all-optical signal processing applications.

Ultra-fast consensus of discrete-time multi-agent systems with multi-step predictive output feedback

NASA Astrophysics Data System (ADS)

Zhang, Wenle; Liu, Jianchang

2016-04-01

This article addresses the ultra-fast consensus problem of high-order discrete-time multi-agent systems based on a unified consensus framework. A novel multi-step predictive output mechanism is proposed under a directed communication topology containing a spanning tree. By predicting the outputs of a network several steps ahead and adding this information into the consensus protocol, it is shown that the asymptotic convergence factor is improved by a power of q + 1 compared to the routine consensus. The difficult problem of selecting the optimal control gain is solved well by introducing a variable called convergence step. In addition, the ultra-fast formation achievement is studied on the basis of this new consensus protocol. Finally, the ultra-fast consensus with respect to a reference model and robust consensus is discussed. Some simulations are performed to illustrate the effectiveness of the theoretical results.

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

2013-05-01

Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Future optical communication networks beyond 160 Gbit/s based on OTDM

NASA Astrophysics Data System (ADS)

Prati, Giancarlo; Bogoni, Antonella; Poti, Luca

2005-01-01

The virtually unlimited bandwidth of optical fibers has caused a great increase in data transmission speed over the past decade and, hence, stimulated high-demand multimedia services such as distance learning, video-conferencing and peer to peer applications. For this reason data traffic is exceeding telephony traffic, and this trend is driving the convergence of telecommunications and computer communications. In this scenario Internet Protocol (IP) is becoming the dominant protocol for any traffic, shifting the attention of the network designers from a circuit switching approach to a packet switching approach. A role of paramount importance in packet switching networks is played by the router that must implement the functionalities to set up and maintain the inter-nodal communications. The main functionalities a router must implement are routing, forwarding, switching, synchronization, contention resolution, and buffering. Nowadays, opto-electronic conversion is still required at each network node to process the incoming signal before routing that to the right output port. However, when the single channel bit rate increases beyond electronic speed limit, Optical Time Division Multiplexing (OTDM) becomes a forced choice, and all-optical processing must be performed to extract the information from the incoming packet. In this paper enabling techniques for ultra-fast all-optical network will be addressed. First a 160 Gbit/s complete transmission system will be considered. As enabling technique, an overview for all-optical logics will be discussed and experimental results will be presented using a particular reconfigurable NOLM based on Self-Phase-Modulation (SPM) or Cross-Phase-Modulation (XPM). Finally, a rough experiment on label extraction, all-optical switching and packet forwarding is shown.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Ultra-fast ipsilateral DPOAE adaptation not modulated by attention?

NASA Astrophysics Data System (ADS)

Dalhoff, Ernst; Zelle, Dennis; Gummer, Anthony W.

2018-05-01

Efferent stimulation of outer hair cells is supposed to attenuate cochlear amplification of sound waves and is accompanied by reduced DPOAE amplitudes. Recently, a method using two subsequent f2 pulses during presentation of a longer f1 pulse was introduced to measure fast ipsilateral adaptation effects on separated DPOAE components. Compensating primary-tone onsets for their latencies at the f2-tonotopic place, the average adaptation measured in four normal-hearing subjects was 5.0 dB with a time constant below 5 ms. In the present study, two experiments were performed to determine the origin of this ultra-fast ipsilateral adaptation effect. The first experiment measured ultra-fast ipsilateral adaptation using a two-pulse paradigm at three frequencies in the four subjects, while controlling for visual attention of the subjects. The other experiment also controlled for visual attention, but utilized a sequence of f2 short pulses in the presence of a continuous f1 tone to sample ipsilateral adaptation effects with longer time constants in eight subjects. In the first experiment, no significant change in the ultra-fast adaptation between non-directed attention and visual attention could be detected. In contrast, the second experiment revealed significant changes in the magnitude of the slower ipsilateral adaptation in the visual-attention condition. In conclusion, the lack of an attentional influence indicates that the ultra-fast ipsilateral DPOAE adaptation is not solely mediated by the medial olivocochlear reflex.

Conception, fabrication and characterization of a silicon based MEMS inertial switch with a threshold value of 5 g

NASA Astrophysics Data System (ADS)

Zhang, Fengtian; Wang, Chao; Yuan, Mingquan; Tang, Bin; Xiong, Zhuang

2017-12-01

Most of the MEMS inertial switches developed in recent years are intended for shock and impact sensing with a threshold value above 50 g. In order to follow the requirement of detecting linear acceleration signal at low-g level, a silicon based MEMS inertial switch with a threshold value of 5 g was designed, fabricated and characterized. The switch consisted of a large proof mass, supported by circular spiral springs. An analytical model of the structure stiffness of the proposed switch was derived and verified by finite-element simulation. The structure fabrication was based on a customized double-buried layer silicon-on-insulator wafer and encapsulated by glass wafers. The centrifugal experiment and nanoindentation experiment were performed to measure the threshold value as well as the structure stiffness. The actual threshold values were measured to be 0.1-0.3 g lower than the pre-designed value of 5 g due to the dimension loss during non-contact lithography processing. Concerning the reliability assessment, a series of environmental experiments were conducted and the switches remained operational without excessive errors. However, both the random vibration and the shock tests indicate that the metal particles generated during collision of contact parts might affect the contact reliability and long-time stability. According to the conclusion reached in this report, an attentive study on switch contact behavior should be included in future research.

Fast gray-to-gray switching of a hybrid-aligned liquid crystal cell

NASA Astrophysics Data System (ADS)

Choi, Tae-Hoon; Kim, Jung-Wook; Yoon, Tae-Hoon

2015-03-01

We demonstrate fast gray-to-gray (GTG) switching of a hybrid-aligned liquid crystal cell by applying both vertical and inplane electric fields to liquid crystals (LCs) using a four-terminal electrode structure. The LCs are switched to the bright state through downward tilting and twist deformation initiated by applying an in-plane electric field, whereas they are switched back to the initial dark state through optically hidden relaxation initiated by applying a vertical electric field for a short duration. The top electrode in the proposed device is grounded, which requires a much higher voltage to be applied for in-plane rotation of LCs. Thus, ultrafast turn-on switching of the device is achieved, whereas the turn-off switching of the proposed device is independent of the elastic constants and the viscosity of the LCs so that fast turn-off switching can be achieved. We experimentally obtained a total response time of 0.75 ms. Furthermore, fast GTG response within 3 ms could be achieved.

Non-oxidized porous silicon-based power AC switch peripheries.

PubMed

Menard, Samuel; Fèvre, Angélique; Valente, Damien; Billoué, Jérôme; Gautier, Gaël

2012-10-11

We present in this paper a novel application of porous silicon (PS) for low-power alternating current (AC) switches such as triode alternating current devices (TRIACs) frequently used to control small appliances (fridge, vacuum cleaner, washing machine, coffee makers, etc.). More precisely, it seems possible to benefit from the PS electrical insulation properties to ensure the OFF state of the device. Based on the technological aspects of the most commonly used AC switch peripheries physically responsible of the TRIAC blocking performances (leakage current and breakdown voltage), we suggest to isolate upper and lower junctions through the addition of a PS layer anodically etched from existing AC switch diffusion profiles. Then, we comment the voltage capability of practical samples emanating from the proposed architecture. Thanks to the characterization results of simple Al-PS-Si(P) structures, the experimental observations are interpreted, thus opening new outlooks in the field of AC switch peripheries.

On-chip quasi-digital optical switch using silicon microring resonator-coupled Mach-Zehnder interferometer.

PubMed

Song, Junfeng; Luo, Xianshu; Tu, Xiaoguang; Jia, Lianxi; Fang, Qing; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

2013-05-20

In this work, we demonstrate thermo-optical quasi-digital optical switch (q-DOS) using silicon microring resonator-coupled Mach-Zehnder interferometer. The optical transmission spectra show box-like response with 1-dB and 3-dB bandwidths of ~1.3 nm and ~1.6 nm, respectively. Such broadband flat-top optical response improves the tolerance to the light source wavelength fluctuation of ± 6 Å and temperature variation of ± 6 °C. Dynamic characterizations show the device with switching power of ~37 mW, switching time of ~7 μs, and on/off ratio of > 30 dB. For performance comparison, we also demonstrate a carrier injection-based electro-optical q-DOS by integrating lateral P-i-N junction with the microring resonator, which significantly reduces power consumption to ~12 mW and switching time to ~0.7 ns only.

16 × 16 non-blocking silicon optical switch based on electro-optic Mach-Zehnder interferometers.

PubMed

Lu, Liangjun; Zhao, Shuoyi; Zhou, Linjie; Li, Dong; Li, Zuxiang; Wang, Minjuan; Li, Xinwan; Chen, Jianping

2016-05-02

We experimentally demonstrate a 16 × 16 non-blocking optical switch fabric with a footprint of 10.7 × 4.4 mm². The switch fabric is composed of 56 2 × 2 silicon Mach-Zehnder interferometers (MZIs), with each integrated with a pair of TiN resistive micro-heaters and a p-i-n diode. The average on-chip insertion loss at 1560 nm wavelength is ~6.7 dB and ~14 dB for the "all-cross" and "all-bar" states, respectively, with a loss variation of ± 1 dB over all routing paths. The measured rise/fall time of the switch upon electrical tuning is 3.2/2.5 ns. The switching functionality is verified by transmission of 20 Gb/s on-off keying (OOK) and 50 Gb/s quadrature phase-shift keying (QPSK) optical signals.

Direct glass bonded high specific power silicon solar cells for space applications

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Rand, J. A.; Cummings, J. R.; Lampo, S. M.; Shreve, K. P.; Barnett, Allen M.

1991-01-01

A lightweight, radiation hard, high performance, ultra-thin silicon solar cell is described that incorporates light trapping and a cover glass as an integral part of the device. The manufacturing feasibility of high specific power, radiation insensitive, thin silicon solar cells was demonstrated experimentally and with a model. Ultra-thin, light trapping structures were fabricated and the light trapping demonstrated experimentally. The design uses a micro-machined, grooved back surface to increase the optical path length by a factor of 20. This silicon solar cell will be highly tolerant to radiation because the base width is less than 25 microns making it insensitive to reduction in minority carrier lifetime. Since the silicon is bonded without silicone adhesives, this solar cell will also be insensitive to UV degradation. These solar cells are designed as a form, fit, and function replacement for existing state of the art silicon solar cells with the effect of simultaneously increasing specific power, power/area, and power supply life. Using a 3-mil thick cover glass and a 0.3 g/sq cm supporting Al honeycomb, a specific power for the solar cell plus cover glass and honeycomb of 80.2 W/Kg is projected. The development of this technology can result in a revolutionary improvement in high survivability silicon solar cell products for space with the potential to displace all existing solar cell technologies for single junction space applications.

Ab initio description of the first stages of laser-induced ultra-fast nonthermal melting of InSb

NASA Astrophysics Data System (ADS)

Zijlstra, E. S.; Walkenhorst, J.; Gilfert, C.; Sippel, C.; Töws, W.; Garcia, M. E.

2008-12-01

Using first principles, all-electron calculations and dynamical simulations we study the behavior of solid InSb immediately after intense femtosecond excitation. First, we determine the laser-excited potential energy surfaces with high accuracy for different electronic temperatures (corresponding to different laser fluences). Then, we demonstrate that, although most phonon modes become only slightly softened even for high electron temperatures, the transverse acoustic modes at the boundary of the Brillouin zone undergo dramatic changes and become unstable. This is the origin of nonthermal melting. Based on these results, the dynamics during the first hundreds of femtoseconds after laser excitation can be unambiguously elucidated. Our results are in agreement with recent experiments and support the predictions made by Stampfli and Bennemann for silicon.

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

A Josephson Junction based SPDT switch

NASA Astrophysics Data System (ADS)

Zhang, Helin; Earnest, Nathan; Lu, Yao; Ma, Ruichao; Chakram, Srivatsan; Schuster, David

RF microwave switches are useful tools in cryogenic experiments, allowing for multiple experiments to be connected to a single cryogenic measurement chain. However, these switches dissipate a substantial amount of heat, preventing fast switching. Josephson junction (JJ) are a promising avenue for realizing millikelvin microwave switching. We present a JJ based single-pole-double throw (SPDT) switch that has fast switching time, no heat dissipation, large on/off contrast, and works over a wide bandwidth. The switch can be used for real-time switching between experiments, routing single photons, or even generating entanglement. We will describe the design of the switch and present experimental characterization of its performance.

Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devicesmore » is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.« less

Silicon switching transistor with high power and low saturation voltage

NASA Technical Reports Server (NTRS)

Stonebraker, E.; Stoneburner, D.; Ferree, H.

1973-01-01

Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei

2016-06-01

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Advanced lightweight optics development for space applications

NASA Astrophysics Data System (ADS)

Bilbro, James W.

1998-01-01

A considerable amount of effort over the past year has been devoted to exploring ultra-lightweight optics for two specific NASA programs, the Next Generation Space Telescope (NGST), and the High Throughput X-ray Spectrometer (HTXS). Experimental investigations have been undertaken in a variety of materials including glass, composites, nickel, beryllium, Carbon fiber reinforced Silicon Carbide (CSiC), Reaction Bonded Silicon Carbide, Chemical Vapor Deposited Silicon Carbide, and Silicon. Overall results of these investigations will be summarized, and specific details will be provided concerning the in-house development of ultra-lightweight nickel replication for both grazing incidence and normal incidence optics. This will include x-ray test results of the grazing incidence optic and cryogenic test results of the normal incidence optic. The status of two 1.5 meter diameter demonstration mirrors for NGST will also be presented. These two demonstrations are aimed at establishing the capability to manufacture and test mirrors that have an areal density of 15 kilograms per square meter. Efforts in thin membrane mirrors and Fresnel lenses will also be briefly discussed.

Modeling of microporous silicon betaelectric converter with 63Ni plating in GEANT4 toolkit*

NASA Astrophysics Data System (ADS)

Zelenkov, P. V.; Sidorov, V. G.; Lelekov, E. T.; Khoroshko, A. Y.; Bogdanov, S. V.; Lelekov, A. T.

2016-04-01

The model of electron-hole pairs generation rate distribution in semiconductor is needed to optimize the parameters of microporous silicon betaelectric converter, which uses 63Ni isotope radiation. By using Monte-Carlo methods of GEANT4 software with ultra-low energy electron physics models this distribution in silicon was calculated and approximated with exponential function. Optimal pore configuration was estimated.

Wavelength-agile near-IR optical parametric oscillator using a deposited silicon waveguide.

PubMed

Wang, Ke-Yao; Foster, Mark A; Foster, Amy C

2015-06-15

Using a deposited hydrogenated amorphous silicon (a-Si:H) waveguide, we demonstrate ultra-broad bandwidth (60 THz) parametric amplification via four-wave mixing (FWM), and subsequently achieve the first silicon optical parametric oscillator (OPO) at near-IR wavelengths. Utilization of the time-dispersion-tuned technique provides an optical source with active wavelength tuning over 42 THz with a fixed pump wave.

A conserved post-transcriptional BMP2 switch in lung cells.

PubMed

Jiang, Shan; Fritz, David T; Rogers, Melissa B

2010-05-15

An ultra-conserved sequence in the bone morphogenetic protein 2 (BMP2) 3' untranslated region (UTR) markedly represses BMP2 expression in non-transformed lung cells. In contrast, the ultra-conserved sequence stimulates BMP2 expression in transformed lung cells. The ultra-conserved sequence functions as a post-transcriptional cis-regulatory switch. A common single-nucleotide polymorphism (SNP, rs15705, +A1123C), which has been shown to influence human morphology, disrupts a conserved element within the ultra-conserved sequence and altered reporter gene activity in non-transformed lung cells. This polymorphism changed the affinity of the BMP2 RNA for several proteins including nucleolin, which has an increased affinity for the C allele. Elevated BMP2 synthesis is associated with increased malignancy in mouse models of lung cancer and poor lung cancer patient prognosis. Understanding the cis- and trans-regulatory factors that control BMP2 synthesis is relevant to the initiation or progression of pathologies associated with abnormal BMP2 levels. (c) 2010 Wiley-Liss, Inc.

Self-Powered Adaptive Switched Architecture Storage

NASA Astrophysics Data System (ADS)

El Mahboubi, F.; Bafleur, M.; Boitier, V.; Alvarez, A.; Colomer, J.; Miribel, P.; Dilhac, J.-M.

2016-11-01

Ambient energy harvesting coupled to storage is a way to improve the autonomy of wireless sensors networks. Moreover, in some applications with harsh environment or when a long service lifetime is required, the use of batteries is prohibited. Ultra-capacitors provide in this case a good alternative for energy storage. Such storage must comply with the following requirements: a sufficient voltage during the initial charge must be rapidly reached, a significant amount of energy should be stored and the unemployed residual energy must be minimised at discharge. To answer these apparently contradictory criteria, we propose a selfadaptive switched architecture consisting of a matrix of switched ultra-capacitors. We present the results of a self-powered adaptive prototype that shows the improvement in terms of charge time constant, energy utilization rate and then energy autonomy.

Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

NASA Astrophysics Data System (ADS)

Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

2004-03-01

The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

High-Speed, high-power, switching transistor

NASA Technical Reports Server (NTRS)

Carnahan, D.; Ohu, C. K.; Hower, P. L.

1979-01-01

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

Photoinduced piezooptics effect in TeO2-Ga2O3 glasses

NASA Astrophysics Data System (ADS)

Ozga, K.; Fedorchuk, A. O.; Armand, P.

2015-08-01

We have found that during the bicolor illumination by two boicolor coherent wavelengths 1540 nm/770 nm there occurred substantial changes of the elastooptical non-diagonal coefficients at 1150 nm cw laser wavelength. They are maximal at power densities 400 … 500 MW/cm2. The studies have shown that the maximal effect exists for ultra-fast quenching glasses and occurs after the 1-2 min of the treatment. The switching off of the optical treatment leads to the disappearance of the photoinduced piezooptics at about 100 ms. The observed changes are explained within the photoinduced changes of the charge density distribution for the principal structural clusters within a framework of the DFT approach. The studies were done both for diagonal as well as off-diagonal piezooptical effect (POE) tensor components.

Wavefront control with a spatial light modulator containing dual-frequency liquid crystal

NASA Astrophysics Data System (ADS)

Gu, Dong-Feng; Winker, Bruce; Wen, Bing; Taber, Don; Brackley, Andrew; Wirth, Allan; Albanese, Marc; Landers, Frank

2004-10-01

A versatile, scalable wavefront control approach based upon proven liquid crystal (LC) spatial light modulator (SLM) technology was extended for potential use in high-energy near-infrared laser applications. The reflective LC SLM module demonstrated has a two-inch diameter active aperture with 812 pixels. Using an ultra-low absorption transparent conductor in the LC SLM, a high laser damage threshold was demonstrated. Novel dual frequency liquid crystal materials and addressing schemes were implemented to achieve fast switching speed (<1ms at 1.31 microns). Combining this LCSLM with a novel wavefront sensing method, a closed loop wavefront controller is being demonstrated. Compared to conventional deformable mirrors, this non-mechanical wavefront control approach offers substantial improvements in speed (bandwidth), resolution, power consumption and system weight/volume.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

PubMed

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito

2015-03-16

We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Ultra high performance liquid chromatography with ion-trap TOF-MS for the fast characterization of flavonoids in Citrus bergamia juice.

PubMed

Sommella, Eduardo; Pepe, Giacomo; Pagano, Francesco; Tenore, Gian Carlo; Dugo, Paola; Manfra, Michele; Campiglia, Pietro

2013-10-01

We have developed a fast ultra HPLC with ion-trap TOF-MS method for the analysis of flavonoids in Citrus bergamia juice. With respect to the typical methods for the analysis of these matrices based on conventional HPLC techniques, a tenfold faster separation was attained. The use of a core-shell particle column ensured high resolution within the fast analysis time of only 5 min. Unambiguous determination of flavonoid identity was obtained by the employment of a hybrid ion-trap TOF mass spectrometer with high mass accuracy (average error 1.69 ppm). The system showed good retention time and peak area repeatability, with maximum RSD% values of 0.36 and 3.86, respectively, as well as good linearity (R(2) ≥ 0.99). Our results show that ultra HPLC can be a useful tool for ultra fast qualitative/quantitative analysis of flavonoid compounds in citrus fruit juices. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chai, Kil-Byoung; Bellan, Paul M.

2013-12-15

An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10{sup 6} frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs.

Tailoring the Optical Properties of Silicon with Ion Beam Created Nanostructures for Advanced Photonics Applications

NASA Astrophysics Data System (ADS)

Akhter, Perveen

In today's fast life, energy consumption has increased more than ever and with that the demand for a renewable and cleaner energy source as a substitute for the fossil fuels has also increased. Solar radiations are the ultimate source of energy but harvesting this energy in a cost effective way is a challenging task. Si is the dominating material for microelectronics and photovoltaics. But owing to its indirect band gap, Si is an inefficient light absorber, thus requiring a thickness of solar cells beyond tens of microns which increases the cost of solar energy. Therefore, techniques to increase light absorption in thin film Si solar cells are of great importance and have been the focus of research for a few decades now. Another big issue of technology in this fast-paced world is the computing rate or data transfer rate between components of a chip in ultra-fast processors. Existing electronic interconnects suffering from the signal delays and heat generation issues are unable to handle high data rates. A possible solution to this problem is in replacing the electronic interconnects with optical interconnects which have large data carrying capacity. However, optical components are limited in size by the fundamental laws of diffraction to about half a wavelength of light and cannot be combined with nanoscale electronic components. Tremendous research efforts have been directed in search of an advanced technology which can bridge the size gap between electronic and photonic worlds. An emerging technology of "plasmonics'' which exploits the extraordinary optical properties of metal nanostructures to tailor the light at nanoscale has been considered a potential solution to both of the above-mentioned problems. Research conducted for this dissertation has an overall goal to investigate the optical properties of silicon with metal nanostructures for photovoltaics and advanced silicon photonics applications. The first part of the research focuses on achieving enhanced light trapping in poly-Si thin films using ion implantation induced surface texturing. In addition to surface texturing produced by H and Ar ion implantations, metal nanostructures are also added to the surface to further suppress light reflection at the plasmonic resonance of metal nanostructures. Remarkable suppression has been achieved resulting in reflection from the air/Si interface to below ˜5%. In the second part, optical properties of embedded metal nanostructures in silicon matrix gettered into the ion implantation created nanocavities are studied. Embedded nanostructures can have a huge impact in future photonics applications by replacing the existing electronic and photonic components such as interconnects, waveguides, modulators and amplifiers with their plasmonic counterparts. This new method of encapsulating metal nanostructures in silicon is cost-effective and compatible with silicon fabrication technology. Spectroscopic ellipsometry is used to study the dielectric properties of silicon with embedded silver nanostructures. High absorption regions around 900 nm, corresponding to plasmonic absorption of Ag nanoparticles in Si, have been observed and compared to theoretical calculations and simulation results. The possibility of modifying the dielectric function of Si with metal nanostructures can lay the foundation for functional base structures for advanced applications in silicon photonics, photovoltaics and plasmonics.

A Survey of Memristive Threshold Logic Circuits.

PubMed

Maan, Akshay Kumar; Jayadevi, Deepthi Anirudhan; James, Alex Pappachen

2017-08-01

In this paper, we review different memristive threshold logic (MTL) circuits that are inspired from the synaptic action of the flow of neurotransmitters in the biological brain. The brainlike generalization ability and the area minimization of these threshold logic circuits aim toward crossing Moore's law boundaries at device, circuits, and systems levels. Fast switching memory, signal processing, control systems, programmable logic, image processing, reconfigurable computing, and pattern recognition are identified as some of the potential applications of MTL systems. The physical realization of nanoscale devices with memristive behavior from materials, such as TiO 2 , ferroelectrics, silicon, and polymers, has accelerated research effort in these application areas, inspiring the scientific community to pursue the design of high-speed, low-cost, low-power, and high-density neuromorphic architectures.

Research on plasma-puff initiation of high Coulomb transfer switches

NASA Technical Reports Server (NTRS)

Venable, Demetrius D.; Han, Kwang S.

1993-01-01

The plasma-puff triggering mechanism based on hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. Research is presented and resulting conference papers are attached. These papers include 'Characteristics of Plasma-Puff Trigger for an Inverse-Pinch Plasma Switch'; 'Ultra-High-Power Plasma Switch INPUTS for Pulse Power Systems'; 'Characteristics of Switching Plasma in an Inverse-Pinch Switch'; 'Comparative Study of INPIStron and Spark Gap'; and 'INPIStron Switched Pulsed Power for Dense Plasma Pinches.'

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

PubMed Central

Dhyani, Veerendra; Das, Samaresh

2017-01-01

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Hongguang, E-mail: chenghg7932@gmail.com; Deng, Ning

2013-12-15

We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10{sup −9} can be achieved for the device of thermalmore » stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.« less

Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

NASA Astrophysics Data System (ADS)

Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

2016-02-01

This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method.

Novel ultra-lightweight and high-resolution MEMS x-ray optics

NASA Astrophysics Data System (ADS)

Mitsuishi, Ikuyuki; Ezoe, Yuichiro; Takagi, Utako; Mita, Makoto; Riveros, Raul; Yamaguchi, Hitomi; Kato, Fumiki; Sugiyama, Susumu; Fujiwara, Kouzou; Morishita, Kohei; Nakajima, Kazuo; Fujihira, Shinya; Kanamori, Yoshiaki; Yamasaki, Noriko Y.; Mitsuda, Kazuhisa; Maeda, Ryutaro

2009-05-01

We have been developing ultra light-weight X-ray optics using MEMS (Micro Electro Mechanical Systems) technologies.We utilized crystal planes after anisotropic wet etching of silicon (110) wafers as X-ray mirrors and succeeded in X-ray reflection and imaging. Since we can etch tiny pores in thin wafers, this type of optics can be the lightest X-ray telescope. However, because the crystal planes are alinged in certain directions, we must approximate ideal optical surfaces with flat planes, which limits angular resolution of the optics on the order of arcmin. In order to overcome this issue, we propose novel X-ray optics based on a combination of five recently developed MEMS technologies, namely silicon dry etching, X-ray LIGA, silicon hydrogen anneal, magnetic fluid assisted polishing and hot plastic deformation of silicon. In this paper, we describe this new method and report on our development of X-ray mirrors fabricated by these technologies and X-ray reflection experiments of two types of MEMS X-ray mirrors made of silicon and nickel. For the first time, X-ray reflections on these mirrors were detected in the angular response measurements. Compared to model calculations, surface roughness of the silicon and nickel mirrors were estimated to be 5 nm and 3 nm, respectively.

Tunable Q-factor silicon microring resonators for ultra-low power parametric processes.

PubMed

Strain, Michael J; Lacava, Cosimo; Meriggi, Laura; Cristiani, Ilaria; Sorel, Marc

2015-04-01

A compact silicon ring resonator is demonstrated that allows simple electrical tuning of the ring coupling coefficient and Q-factor and therefore the resonant enhancement of on-chip nonlinear optical processes. Fabrication-induced variation in designed coupling fraction, crucial in the resonator performance, can be overcome using this post-fabrication trimming technique. Tuning of the microring resonator across the critical coupling point is demonstrated, exhibiting a Q-factor tunable between 9000 and 96,000. Consequently, resonantly enhanced four-wave mixing shows tunable efficiency between -40 and -16.3  dB at an ultra-low on-chip pump power of 0.7 mW.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Fan, A.; Fiorillo, G.

Rare event search experiments, such as those searching for dark matter and observations of neutrinoless double beta decay, require ultra low levels of radioactive background for unmistakable identification. In order to reduce the radioactive background of detectors used in these types of event searches, low background photosensors are required, as the physical size of these detectors become increasing larger, and hence the number of such photosensors used also increases rapidly. Considering that most dark matter and neutrinoless double beta decay experiments are turning towards using noble liquids as the target choice, liquid xenon and liquid argon for instance, photosensors thatmore » can work well at cryogenic temperatures are required, 165 K and 87 K for liquid xenon and liquid argon, respectively. The Silicon Geiger Hybrid Tube (SiGHT) is a novel photosensor designed specifically for use in ultra low background experiments operating at cryogenic temperatures. It is based on the proven photocathode plus silicon photomultiplier (SiPM) hybrid technology and consists of very few other, but also ultra radio-pure, materials like fused silica and silicon for the SiPM. Lastly, the introduction of the SiGHT concept, as well as a feasibility study for its production, is reported in this article.« less

Total Ionizing Dose Test of Microsemi's Silicon Switching Transistors JANTXV2N2222AUB and 2N2907AUB

NASA Technical Reports Server (NTRS)

Campola, M.; Freeman, B.; Yau, K.

2017-01-01

Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.

Ultralow crosstalk nanosecond-scale nested 2 × 2 Mach-Zehnder silicon photonic switch.

PubMed

Dupuis, Nicolas; Rylyakov, Alexander V; Schow, Clint L; Kuchta, Daniel M; Baks, Christian W; Orcutt, Jason S; Gill, Douglas M; Green, William M J; Lee, Benjamin G

2016-07-01

We present the design and characterization of a novel electro-optic silicon photonic 2×2 nested Mach-Zehnder switch monolithically integrated with a CMOS driver and interface logic. The photonic device uses a variable optical attenuator in order to balance the power inside the Mach-Zehnder interferometer leading to ultralow crosstalk performance. We measured a crosstalk as low as -34.5  dB, while achieving ∼2  dB insertion loss and 4 ns transient response.

A Low-G Silicon Inertial Micro-Switch with Enhanced Contact Effect Using Squeeze-Film Damping.

PubMed

Peng, Yingchun; Wen, Zhiyu; Li, Dongling; Shang, Zhengguo

2017-02-16

Contact time is one of the most important properties for inertial micro-switches. However, it is usually less than 20 μs for the switch with rigid electrode, which is difficult for the external circuit to recognize. This issue is traditionally addressed by designing the switch with a keep-close function or flexible electrode. However, the switch with keep-close function requires an additional operation to re-open itself, causing inconvenience for some applications wherein repeated monitoring is needed. The switch with a flexible electrode is usually fabricated by electroplating technology, and it is difficult to realize low-g switches (<50 g) due to inherent fabrication errors. This paper reports a contact enhancement using squeeze-film damping effect for low-g switches. A vertically driven switch with large proof mass and flexible springs was designed based on silicon micromachining, in order to achieve a damping ratio of 2 and a threshold value of 10 g. The proposed contact enhancement was investigated by theoretical and experimental studies. The results show that the damping effect can not only prolong the contact time for the dynamic acceleration load, but also reduce the contact bounce for the quasi-static acceleration load. The contact time under dynamic and quasi-static loads was 40 μs and 570 μs, respectively.

Effective Analysis of NGS Metagenomic Data with Ultra-Fast Clustering Algorithms (MICW - Metagenomics Informatics Challenges Workshop: 10K Genomes at a Time)

ScienceCinema

Li, Weizhong

2018-02-12

San Diego Supercomputer Center's Weizhong Li on "Effective Analysis of NGS Metagenomic Data with Ultra-fast Clustering Algorithms" at the Metagenomics Informatics Challenges Workshop held at the DOE JGI on October 12-13, 2011.

Ultra-fast Object Recognition from Few Spikes

DTIC Science & Technology

2005-07-06

Computer Science and Artificial Intelligence Laboratory Ultra-fast Object Recognition from Few Spikes Chou Hung, Gabriel Kreiman , Tomaso Poggio...neural code for different kinds of object-related information. *The authors, Chou Hung and Gabriel Kreiman , contributed equally to this work...Supplementary Material is available at http://ramonycajal.mit.edu/ kreiman /resources/ultrafast

H.sub.2O doped WO.sub.3, ultra-fast, high-sensitivity hydrogen sensors

DOEpatents

Liu, Ping [Denver, CO; Tracy, C Edwin [Golden, CO; Pitts, J Roland [Lakewood, CO; Lee, Se-Hee [Lakewood, CO

2011-03-22

An ultra-fast response, high sensitivity structure for optical detection of low concentrations of hydrogen gas, comprising: a substrate; a water-doped WO.sub.3 layer coated on the substrate; and a palladium layer coated on the water-doped WO.sub.3 layer.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System.

PubMed

Shen, Chih-Lung; Liou, Heng

2017-11-15

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

PubMed Central

Shen, Chih-Lung; Liou, Heng

2017-01-01

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%. PMID:29140282

MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Varaljay, Nicholas C.

2002-01-01

Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Selective Epitaxial Graphene Growth on SiC via AlN Capping

NASA Astrophysics Data System (ADS)

Zaman, Farhana; Rubio-Roy, Miguel; Moseley, Michael; Lowder, Jonathan; Doolittle, William; Berger, Claire; Dong, Rui; Meindl, James; de Heer, Walt; Georgia Institute of Technology Team

2011-03-01

Electronic-quality graphene is epitaxially grown by graphitization of carbon-face silicon carbide (SiC) by the sublimation of silicon atoms from selected regions uncapped by aluminum nitride (AlN). AlN (deposited by molecular beam epitaxy) withstands high graphitization temperatures of 1420o C, hence acting as an effective capping layer preventing the growth of graphene under it. The AlN is patterned and etched to open up windows onto the SiC surface for subsequent graphitization. Such selective epitaxial growth leads to the formation of high-quality graphene in desired patterns without the need for etching and lithographic patterning of graphene itself. No detrimental contact of the graphene with external chemicals occurs throughout the fabrication-process. The impact of process-conditions on the mobility of graphene is investigated. Graphene hall-bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. This controlled growth of graphene in selected regions represents a viable approach to fabrication of high-mobility graphene as the channel material for fast-switching field-effect transistors.

Ultra-large optical modulation of electrochromic porous WO3 film and the local monitoring of redox activity† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c5sc03727a

PubMed Central

Cai, Guofa; Cui, Mengqi; Kumar, Vipin; Darmawan, Peter; Wang, Jiangxin; Wang, Xu; Lee-Sie Eh, Alice; Qian, Kai

2016-01-01

Porous WO3 films with ultra-high transmittance modulation were successfully fabricated on different substrates by a novel, facile and economical pulsed electrochemical deposited method with 1.1 s interval time between each pulse. The near ideal optical modulation (97.7% at 633 nm), fast switching speed (6 and 2.7 s), high coloration efficiency (118.3 cm2 C–1), and excellent cycling stability are achieved by the porous WO3 on ITO-coated glass. The outstanding electrochromic performances of the porous WO3 film were mainly attributed to the porous structure, which facilitates the charge-transfer, promotes the electrolyte infiltration and alleviates the expansion of the WO3 during H+ insertion compared to that of the compact structure. In addition, the relationships between the structural and electrochemical activity of the electrochromic WO3 films were further explored by the scanning electrochemical microscopy. These results testify that the porous structure can promote the infiltration of electrolyte and reduce the diffusion path, which consequently enhance the electrochemical activity. PMID:29910894

A two-step method for rapid characterization of electroosmotic flows in capillary electrophoresis.

PubMed

Zhang, Wenjing; He, Muyi; Yuan, Tao; Xu, Wei

2017-12-01

The measurement of electroosmotic flow (EOF) is important in a capillary electrophoresis (CE) experiment in terms of performance optimization and stability improvement. Although several methods exist, there are demanding needs to accurately characterize ultra-low electroosmotic flow rates (EOF rates), such as in coated capillaries used in protein separations. In this work, a new method, called the two-step method, was developed to accurately and rapidly measure EOF rates in a capillary, especially for measuring the ultra-low EOF rates in coated capillaries. In this two-step method, the EOF rates were calculated by measuring the migration time difference of a neutral marker in two consecutive experiments, in which a pressure driven was introduced to accelerate the migration and the DC voltage was reversed to switch the EOF direction. Uncoated capillaries were first characterized by both this two-step method and a conventional method to confirm the validity of this new method. Then this new method was applied in the study of coated capillaries. Results show that this new method is not only fast in speed, but also better in accuracy. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

PubMed Central

Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos

2018-01-01

Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267

All-optical switching of silicon disk resonator based on photothermal effect in metal-insulator-metal absorber.

PubMed

Shi, Yuechun; Chen, Xi; Lou, Fei; Chen, Yiting; Yan, Min; Wosinski, Lech; Qiu, Min

2014-08-01

Efficient narrowband light absorption by a metal-insulator-metal (MIM) structure can lead to high-speed light-to-heat conversion at a micro- or nanoscale. Such a MIM structure can serve as a heater for achieving all-optical light control based on the thermo-optical (TO) effect. Here we experimentally fabricated and characterized a novel all-optical switch based on a silicon microdisk integrated with a MIM light absorber. Direct integration of the absorber on top of the microdisk reduces the thermal capacity of the whole device, leading to high-speed TO switching of the microdisk resonance. The measurement result exhibits a rise time of 2.0 μs and a fall time of 2.6 μs with switching power as low as 0.5 mW; the product of switching power and response time is only about 1.3  mW·μs. Since no auxiliary elements are required for the heater, the switch is structurally compact, and its fabrication is rather easy. The device potentially can be deployed for new kinds of all-optical applications.

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

NASA Astrophysics Data System (ADS)

Grekhov, Igor V.

2002-07-01

This report results from a contract tasking Ioffe Institute as follows: The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes (JRD). The operation of such diodes is founded on the superfast recovery of the junction's blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i) to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition; ii) to reduce the weight and size of pulse devices; and iii) to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

NASA Astrophysics Data System (ADS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.

PubMed

Kim, Jong-Hun; Park, Hyo-Hoon

2015-11-01

We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 μm width. At a 6° branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2  dB are achieved along with a thermal heating power of 151.5 mW.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

NASA Astrophysics Data System (ADS)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty

PubMed Central

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence. PMID:24163567

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

NASA Astrophysics Data System (ADS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( <0.5% X0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering

DTIC Science & Technology

2016-09-01

Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy...Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy Sensors and Electron Devices...08/2016 4. TITLE AND SUBTITLE Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering 5a

Bright and ultra-fast scintillation from a semiconductor?

PubMed Central

Derenzo, Stephen E.; Bourret-Courshesne, Edith; Bizarri, Gregory; Canning, Andrew

2015-01-01

Semiconductor scintillators are worth studying because they include both the highest luminosities and shortest decay times of all known scintillators. Moreover, many semiconductors have the heaviest stable elements (Tl, Hg, Pb, Bi) as a major constituent and a high ion pair yield that is proportional to the energy deposited. We review the scintillation properties of semiconductors activated by native defects, isoelectronic impurities, donors and acceptors with special emphasis on those that have exceptionally high luminosities (e.g. ZnO:Zn, ZnS:Ag,Cl, CdS:Ag,Cl) and those that have ultra-fast decay times (e.g. ZnO:Ga; CdS:In). We discuss underlying mechanisms that are consistent with these properties and the possibilities for achieving (1) 200,000 photons/MeV and 1% fwhm energy resolution for 662 keV gamma rays, (2) ultra-fast (ns) decay times and coincident resolving times of 30 ps fwhm for time-of-flight positron emission tomography, and (3) both a high luminosity and an ultra-fast decay time from the same scintillator at cryogenic temperatures. PMID:26855462

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment.

PubMed

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-15

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (10 19 cm -3 ) are distributed in the initial state, which exist in the forms of Si 2 N≡Si·, SiO 2 ≡Si·, O 3 ≡Si·, and N 3 ≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H + and O 2- . Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

NASA Astrophysics Data System (ADS)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Thermo-optic characteristics and switching power limit of slow-light photonic crystal structures on a silicon-on-insulator platform.

PubMed

Chahal, Manjit; Celler, George K; Jaluria, Yogesh; Jiang, Wei

2012-02-13

Employing a semi-analytic approach, we study the influence of key structural and optical parameters on the thermo-optic characteristics of photonic crystal waveguide (PCW) structures on a silicon-on-insulator (SOI) platform. The power consumption and spatial temperature profile of such structures are given as explicit functions of various structural, thermal and optical parameters, offering physical insight not available in finite-element simulations. Agreement with finite-element simulations and experiments is demonstrated. Thermal enhancement of the air-bridge structure is analyzed. The practical limit of thermo-optic switching power in slow light PCWs is discussed, and the scaling with key parameters is analyzed. Optical switching with sub-milliwatt power is shown viable.

Network Modeling for Functional Magnetic Resonance Imaging (fMRI) Signals during Ultra-Fast Speech Comprehension in Late-Blind Listeners

PubMed Central

Dietrich, Susanne; Hertrich, Ingo; Ackermann, Hermann

2015-01-01

In many functional magnetic resonance imaging (fMRI) studies blind humans were found to show cross-modal reorganization engaging the visual system in non-visual tasks. For example, blind people can manage to understand (synthetic) spoken language at very high speaking rates up to ca. 20 syllables/s (syl/s). FMRI data showed that hemodynamic activation within right-hemispheric primary visual cortex (V1), bilateral pulvinar (Pv), and left-hemispheric supplementary motor area (pre-SMA) covaried with their capability of ultra-fast speech (16 syllables/s) comprehension. It has been suggested that right V1 plays an important role with respect to the perception of ultra-fast speech features, particularly the detection of syllable onsets. Furthermore, left pre-SMA seems to be an interface between these syllabic representations and the frontal speech processing and working memory network. So far, little is known about the networks linking V1 to Pv, auditory cortex (A1), and (mesio-) frontal areas. Dynamic causal modeling (DCM) was applied to investigate (i) the input structure from A1 and Pv toward right V1 and (ii) output from right V1 and A1 to left pre-SMA. As concerns the input Pv was significantly connected to V1, in addition to A1, in blind participants, but not in sighted controls. Regarding the output V1 was significantly connected to pre-SMA in blind individuals, and the strength of V1-SMA connectivity correlated with the performance of ultra-fast speech comprehension. By contrast, in sighted controls, not understanding ultra-fast speech, pre-SMA did neither receive input from A1 nor V1. Taken together, right V1 might facilitate the “parsing” of the ultra-fast speech stream in blind subjects by receiving subcortical auditory input via the Pv (= secondary visual pathway) and transmitting this information toward contralateral pre-SMA. PMID:26148062

Network Modeling for Functional Magnetic Resonance Imaging (fMRI) Signals during Ultra-Fast Speech Comprehension in Late-Blind Listeners.

PubMed

Dietrich, Susanne; Hertrich, Ingo; Ackermann, Hermann

2015-01-01

In many functional magnetic resonance imaging (fMRI) studies blind humans were found to show cross-modal reorganization engaging the visual system in non-visual tasks. For example, blind people can manage to understand (synthetic) spoken language at very high speaking rates up to ca. 20 syllables/s (syl/s). FMRI data showed that hemodynamic activation within right-hemispheric primary visual cortex (V1), bilateral pulvinar (Pv), and left-hemispheric supplementary motor area (pre-SMA) covaried with their capability of ultra-fast speech (16 syllables/s) comprehension. It has been suggested that right V1 plays an important role with respect to the perception of ultra-fast speech features, particularly the detection of syllable onsets. Furthermore, left pre-SMA seems to be an interface between these syllabic representations and the frontal speech processing and working memory network. So far, little is known about the networks linking V1 to Pv, auditory cortex (A1), and (mesio-) frontal areas. Dynamic causal modeling (DCM) was applied to investigate (i) the input structure from A1 and Pv toward right V1 and (ii) output from right V1 and A1 to left pre-SMA. As concerns the input Pv was significantly connected to V1, in addition to A1, in blind participants, but not in sighted controls. Regarding the output V1 was significantly connected to pre-SMA in blind individuals, and the strength of V1-SMA connectivity correlated with the performance of ultra-fast speech comprehension. By contrast, in sighted controls, not understanding ultra-fast speech, pre-SMA did neither receive input from A1 nor V1. Taken together, right V1 might facilitate the "parsing" of the ultra-fast speech stream in blind subjects by receiving subcortical auditory input via the Pv (= secondary visual pathway) and transmitting this information toward contralateral pre-SMA.

Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film

NASA Astrophysics Data System (ADS)

Liang, Dandan; Li, Xiaoping; Wang, Junshuai; Wu, Liangchen; Chen, Peng

2018-07-01

ZnO/BiFeO3/ZnO multilayer was fabricated on silicon (Si) substrate by radio-frequency magnetron sputtering system. The resistive switching characteristics in ZnO/BiFeO3/ZnO devices are observed, and the resistive switching behavior can be modulated by white light.

Study of nonlinear absorption properties of reduced graphene oxide by Z-scan technique

NASA Astrophysics Data System (ADS)

Sreeja, V. G.; Vinitha, G.; Reshmi, R.; Anila, E. I.; Jayaraj, M. K.

2017-05-01

Graphene has generated enormous research interest during the last decade due to its significant unique properties and wide applications in the field of optoelectronics and photonics. This research studied the structural and nonlinear absorption properties of reduced graphene oxide (rGO) synthesized by Modified Hummer's method. Structural and physiochemical properties of the rGO were explored with the help of Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy (Raman). Nonlinear absorption property in rGO, was investigated by open aperture Z-scan technique by using a continuous wave (CW) laser. The Z-scan results demonstrate saturable absorption property of rGO with a nonlinear absorption coefficient, β, of -2.62 × 10-4 cm/W, making it suitable for applications in Q switching, generation of ultra-fast high energy pulses in laser cavity and mode lockers.

Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

2017-04-01

Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

Experimental observation of low threshold optical bistability in exfoliated graphene with low oxidation degree

NASA Astrophysics Data System (ADS)

Sharif, Morteza A.; Majles Ara, M. H.; Ghafary, Bijan; Salmani, Somayeh; Mohajer, Salman

2016-03-01

We have experimentally investigated low threshold Optical Bistability (OB) and multi-stability in exfoliated graphene ink with low oxidation degree. Theoretical predictions of N-layer problem and the resonator feedback problem show good agreement with the experimental observation. In contrary to the other graphene oxide samples, we have indicated that the absorbance does not restrict OB process. We have concluded from the experimental results and Nonlinear Schrödinger Equation (NLSE) that the nonlinear dispersion - rather than absorption - is the main nonlinear mechanism of OB. In addition to the enhanced nonlinearity, exfoliated graphene with low oxidation degree possesses semiconductors group III-V equivalent band gap energy, high charge carrier mobility and thus, ultra-fast optical response which makes it a unique optical material for application in all optical switching, especially in THz frequency range.

A high-speed, tunable silicon photonic ring modulator integrated with ultra-efficient active wavelength control.

PubMed

Zheng, Xuezhe; Chang, Eric; Amberg, Philip; Shubin, Ivan; Lexau, Jon; Liu, Frankie; Thacker, Hiren; Djordjevic, Stevan S; Lin, Shiyun; Luo, Ying; Yao, Jin; Lee, Jin-Hyoung; Raj, Kannan; Ho, Ron; Cunningham, John E; Krishnamoorthy, Ashok V

2014-05-19

We report the first complete 10G silicon photonic ring modulator with integrated ultra-efficient CMOS driver and closed-loop wavelength control. A selective substrate removal technique was used to improve the ring tuning efficiency. Limited by the thermal tuner driver output power, a maximum open-loop tuning range of about 4.5nm was measured with about 14mW of total tuning power including the heater driver circuit power consumption. Stable wavelength locking was achieved with a low-power mixed-signal closed-loop wavelength controller. An active wavelength tracking range of > 500GHz was demonstrated with controller energy cost of only 20fJ/bit.

Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

PubMed

Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

2013-03-25

n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

Magneto-optical Kerr rotation and color in ultrathin lossy dielectric

NASA Astrophysics Data System (ADS)

Zhang, Jing; Wang, Hai; Qu, Xin; Zhou, Yun song; Li, Li na

2017-05-01

Ultra-thin optical coating comprising nanometer-thick silicon absorbing films on iron substrates can display strong optical interference effects. A resonance peak of ∼1.6^\\circ longitudinal Kerr rotation with the silicon thickness of ∼47 \\text{nm} was found at the wavelength of 660 nm. The optical properties of silicon thin films were well controlled by the sputtering power. Non-iridescence color exhibition and Kerr rotation enhancement can be manipulated and encoded individually.

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

PubMed

Jones, Adam M; DeRose, Christopher T; Lentine, Anthony L; Trotter, Douglas C; Starbuck, Andrew L; Norwood, Robert A

2013-05-20

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

A highly ordered mesostructured material containing regularly distributed phenols: preparation and characterization at a molecular level through ultra-fast magic angle spinning proton NMR spectroscopy.

PubMed

Roussey, Arthur; Gajan, David; Maishal, Tarun K; Mukerjee, Anhurada; Veyre, Laurent; Lesage, Anne; Emsley, Lyndon; Copéret, Christophe; Thieuleux, Chloé

2011-03-14

Highly ordered organic-inorganic mesostructured material containing regularly distributed phenols is synthesized by combining a direct synthesis of the functional material and a protection-deprotection strategy and characterized at a molecular level through ultra-fast magic angle spinning proton NMR spectroscopy.

An assessment of the hardness of miniature vacuum tubes to high-voltage transients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orvis, W.J.

1990-03-01

Miniature vacuum tubes are vacuum switching and control devices fabricated on a silicon wafer, using the same technology as is used to make integrated circuits. They operate in much the same manner as conventional vacuum tubes, but with two important differences: they are micron sized devices, and they employ field emission instead of thermionic emission as the electron source. As these devices have a vacuum as their active region, they will be extremely hard to nuclear radiation and relatively insensitive to temperature effects, they are also expected to be extremely fast devices. We have estimated here that their hardness tomore » high-voltage transients will be at least as good as existing semiconductor devices and possibly better. 5 figs.« less

Gas bubble formation in fused silica generated by ultra-short laser pulses.

PubMed

Cvecek, Kristian; Miyamoto, Isamu; Schmidt, Michael

2014-06-30

During processing of glass using ultra-fast lasers the formation of bubble-like structures can be observed in several glass types such as fused silica. Their formation can be exploited to generate periodic gratings in glasses but for other glass processing techniques such as waveguide-writing or glass welding by ultra-fast lasers the bubble formation proves often detrimental. In this work we present experiments and their results in order to gain understanding of the origins and on the underlying formation and transportation mechanisms of the gas bubbles.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching withmore » temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.« less

Three-dimensional crossbar arrays of self-rectifying Si/SiO 2/Si memristors

DOE PAGES

Li, Can; Han, Lili; Jiang, Hao; ...

2017-06-05

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibitsmore » repeatable resistance switching behavior with high rectifying ratio (10 5), high ON/OFF conductance ratio (10 4) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.« less

Si photonics technology for future optical interconnection

NASA Astrophysics Data System (ADS)

Zheng, Xuezhe; Krishnamoorthy, Ashok V.

2011-12-01

Scaling of computing systems require ultra-efficient interconnects with large bandwidth density. Silicon photonics offers a disruptive solution with advantages in reach, energy efficiency and bandwidth density. We review our progress in developing building blocks for ultra-efficient WDM silicon photonic links. Employing microsolder based hybrid integration with low parasitics and high density, we optimize photonic devices on SOI platforms and VLSI circuits on more advanced bulk CMOS technology nodes independently. Progressively, we successfully demonstrated single channel hybrid silicon photonic transceivers at 5 Gbps and 10 Gbps, and 80 Gbps arrayed WDM silicon photonic transceiver using reverse biased depletion ring modulators and Ge waveguide photo detectors. Record-high energy efficiency of less than 100fJ/bit and 385 fJ/bit were achieved for the hybrid integrated transmitter and receiver, respectively. Waveguide grating based optical proximity couplers were developed with low loss and large optical bandwidth to enable multi-layer intra/inter-chip optical interconnects. Thermal engineering of WDM devices by selective substrate removal, together with WDM link using synthetic wavelength comb, we significantly improved the device tuning efficiency and reduced the tuning range. Using these innovative techniques, two orders of magnitude tuning power reduction was achieved. And tuning cost of only a few 10s of fJ/bit is expected for high data rate WDM silicon photonic links.

High-performance solid state supercapacitors assembling graphene interconnected networks in porous silicon electrode by electrochemical methods using 2,6-dihydroxynaphthalen.

PubMed

Romanitan, Cosmin; Varasteanu, Pericle; Mihalache, Iuliana; Culita, Daniela; Somacescu, Simona; Pascu, Razvan; Tanasa, Eugenia; Eremia, Sandra A V; Boldeiu, Adina; Simion, Monica; Radoi, Antonio; Kusko, Mihaela

2018-06-25

The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N 2 , 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.

Swap intensified WDR CMOS module for I2/LWIR fusion

NASA Astrophysics Data System (ADS)

Ni, Yang; Noguier, Vincent

2015-05-01

The combination of high resolution visible-near-infrared low light sensor and moderate resolution uncooled thermal sensor provides an efficient way for multi-task night vision. Tremendous progress has been made on uncooled thermal sensors (a-Si, VOx, etc.). It's possible to make a miniature uncooled thermal camera module in a tiny 1cm3 cube with <1W power consumption. For silicon based solid-state low light CCD/CMOS sensors have observed also a constant progress in terms of readout noise, dark current, resolution and frame rate. In contrast to thermal sensing which is intrinsic day&night operational, the silicon based solid-state sensors are not yet capable to do the night vision performance required by defense and critical surveillance applications. Readout noise, dark current are 2 major obstacles. The low dynamic range at high sensitivity mode of silicon sensors is also an important limiting factor, which leads to recognition failure due to local or global saturations & blooming. In this context, the image intensifier based solution is still attractive for the following reasons: 1) high gain and ultra-low dark current; 2) wide dynamic range and 3) ultra-low power consumption. With high electron gain and ultra low dark current of image intensifier, the only requirement on the silicon image pickup device are resolution, dynamic range and power consumption. In this paper, we present a SWAP intensified Wide Dynamic Range CMOS module for night vision applications, especially for I2/LWIR fusion. This module is based on a dedicated CMOS image sensor using solar-cell mode photodiode logarithmic pixel design which covers a huge dynamic range (> 140dB) without saturation and blooming. The ultra-wide dynamic range image from this new generation logarithmic sensor can be used directly without any image processing and provide an instant light accommodation. The complete module is slightly bigger than a simple ANVIS format I2 tube with <500mW power consumption.

20 kA PFN capacitor bank with solid-state switching. [pulse forming network for plasma studies

NASA Technical Reports Server (NTRS)

Posta, S. J.; Michels, C. J.

1973-01-01

A compact high-current pulse-forming network capacitor bank using paralleled silicon controlled rectifiers as switches is described. The maximum charging voltage of the bank is 1kV and maximum load current is 20 kA. The necessary switch equalization criteria and performance with dummy load and an arc plasma generator are described.

High-performance flat data center network architecture based on scalable and flow-controlled optical switching system

NASA Astrophysics Data System (ADS)

Calabretta, Nicola; Miao, Wang; Dorren, Harm

2016-03-01

Traffic in data centers networks (DCNs) is steadily growing to support various applications and virtualization technologies. Multi-tenancy enabling efficient resource utilization is considered as a key requirement for the next generation DCs resulting from the growing demands for services and applications. Virtualization mechanisms and technologies can leverage statistical multiplexing and fast switch reconfiguration to further extend the DC efficiency and agility. We present a novel high performance flat DCN employing bufferless and distributed fast (sub-microsecond) optical switches with wavelength, space, and time switching operation. The fast optical switches can enhance the performance of the DCNs by providing large-capacity switching capability and efficiently sharing the data plane resources by exploiting statistical multiplexing. Benefiting from the Software-Defined Networking (SDN) control of the optical switches, virtual DCNs can be flexibly created and reconfigured by the DCN provider. Numerical and experimental investigations of the DCN based on the fast optical switches show the successful setup of virtual network slices for intra-data center interconnections. Experimental results to assess the DCN performance in terms of latency and packet loss show less than 10^-5 packet loss and 640ns end-to-end latency with 0.4 load and 16- packet size buffer. Numerical investigation on the performance of the systems when the port number of the optical switch is scaled to 32x32 system indicate that more than 1000 ToRs each with Terabit/s interface can be interconnected providing a Petabit/s capacity. The roadmap to photonic integration of large port optical switches will be also presented.

Two terminal micropower radar sensor

DOEpatents

McEwan, Thomas E.

1995-01-01

A simple, low power ultra-wideband radar motion sensor/switch configuration connects a power source and load to ground. The switch is connected to and controlled by the signal output of a radar motion sensor. The power input of the motion sensor is connected to the load through a diode which conducts power to the motion sensor when the switch is open. A storage capacitor or rechargeable battery is connected to the power input of the motion sensor. The storage capacitor or battery is charged when the switch is open and powers the motion sensor when the switch is closed. The motion sensor and switch are connected between the same two terminals between the source/load and ground.

Two terminal micropower radar sensor

DOEpatents

McEwan, T.E.

1995-11-07

A simple, low power ultra-wideband radar motion sensor/switch configuration connects a power source and load to ground. The switch is connected to and controlled by the signal output of a radar motion sensor. The power input of the motion sensor is connected to the load through a diode which conducts power to the motion sensor when the switch is open. A storage capacitor or rechargeable battery is connected to the power input of the motion sensor. The storage capacitor or battery is charged when the switch is open and powers the motion sensor when the switch is closed. The motion sensor and switch are connected between the same two terminals between the source/load and ground. 3 figs.

Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency

NASA Astrophysics Data System (ADS)

Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.

2017-10-01

An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.

Development of a 30 kW Inductively Coupled Plasma Torch Facility for Advanced Aerospace Material Investigations

DTIC Science & Technology

2012-02-21

passive oxidation of zirconium diboride forms zirconia and boron oxide, and the passive oxidation of silicon carbide forms silica and carbon monoxide: ZrB2... silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems...Process- ing, properties, and arc jet oxidation of hafnium diboride/ silicon carbide ultra high temperature ceramics. J Mater Sci 2004;39:5925–37. 12

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos,more » we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.« less

Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films

NASA Astrophysics Data System (ADS)

Nakashima, Ryosuke; Shin, Ryota; Hanafusa, Hiroaki; Higashi, Seiichiro

2017-06-01

We have successfully generated ultra high-power thermal plasma jet (Super TPJ: s-TPJ) by increasing the Ar gas supply pressure to 0.4 MPa and the flow rate to 18 L/min. DC arc discharge was stably performed under a supply power of 4.6 kW. The peak power density of s-TPJ reached 64.1 kW/cm2 and enabled us to melt and recrystallize amorphous silicon (a-Si) films on quartz substrates with a scanning speed as high as 8000 mm/s. Under ultra high-speed scanning faster than 3000 mm/s, we observed granular crystal growth (GCG) competing with conventional high-speed lateral crystallization (HSLC). When further high speed scanning was performed, we observed a significant increase in grain density, which suggests spontaneous nucleation in undercooled molten Si as the origin of GCG. When we crystallized an isolated pattern of 6 × 6 µm2 under GCG conditions, single crystalline growth was successfully achieved.

Ultra-thin, light-trapping silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

1989-01-01

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Note: A rectangular pulse generator for 50 kV voltage, 0.8 ns rise time, and 10 ns pulse width based on polymer-film switch.

PubMed

Wu, Hanyu; Zhang, Xinjun; Sun, Tieping; Zeng, Zhengzhong; Cong, Peitian; Zhang, Shaoguo

2015-10-01

In this article, we describe a rectangular pulse generator, consisting of a polymer-film switch, a tri-plate transmission line, and parallel post-shaped ceramic resistor load, for 50-kV voltage, 0.8-ns rise time, and 10-ns width. The switch and resistors are arranged in atmospheric air and the transmission line can work in atmospheric air or in transformer oil to change the pulse width from 6.7 ns to 10 ns. The fast switching and low-inductance characteristics of the polymer-film switch ensure the fast rising wavefront of <1 ns. This generator can be applied in the calibration of nanosecond voltage dividers and used for electromagnetic pulse tests as a fast-rising current injection source.

Micromechanical Switches on GaAs for Microwave Applications

NASA Technical Reports Server (NTRS)

Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

1995-01-01

In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Lim, Herianto; Stavrias, Nikolas; Johnson, Brett C.; Marvel, Robert E.; Haglund, Richard F.; McCallum, Jeffrey C.

2014-03-01

Vanadium dioxide (VO2) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator-to-metal transition, the phase transition in VO2 can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO2 with erbium ions (Er3+) and observe their combined properties. The first excited-state luminescence of Er3+ lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er3+ into VO2 could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO2 thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO2 by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ˜800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO2 thin films. We conclude that Er-implanted VO2 can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO2.

Tracking the Speech Signal--Time-Locked MEG Signals during Perception of Ultra-Fast and Moderately Fast Speech in Blind and in Sighted Listeners

ERIC Educational Resources Information Center

Hertrich, Ingo; Dietrich, Susanne; Ackermann, Hermann

2013-01-01

Blind people can learn to understand speech at ultra-high syllable rates (ca. 20 syllables/s), a capability associated with hemodynamic activation of the central-visual system. To further elucidate the neural mechanisms underlying this skill, magnetoencephalographic (MEG) measurements during listening to sentence utterances were cross-correlated…

Experience-Related Structural Changes of Degenerated Occipital White Matter in Late-Blind Humans – A Diffusion Tensor Imaging Study

PubMed Central

Dietrich, Susanne; Hertrich, Ingo; Kumar, Vinod; Ackermann, Hermann

2015-01-01

Late-blind humans can learn to understand speech at ultra-fast syllable rates (ca. 20 syllables/s), a capability associated with hemodynamic activation of the central-visual system. Thus, the observed functional cross-modal recruitment of occipital cortex might facilitate ultra-fast speech processing in these individuals. To further elucidate the structural prerequisites of this skill, diffusion tensor imaging (DTI) was conducted in late-blind subjects differing in their capability of understanding ultra-fast speech. Fractional anisotropy (FA) was determined as a quantitative measure of the directionality of water diffusion, indicating fiber tract characteristics that might be influenced by blindness as well as the acquired perceptual skills. Analysis of the diffusion images revealed reduced FA in late-blind individuals relative to sighted controls at the level of the optic radiations at either side and the right-hemisphere dorsal thalamus (pulvinar). Moreover, late-blind subjects showed significant positive correlations between FA and the capacity of ultra-fast speech comprehension within right-hemisphere optic radiation and thalamus. Thus, experience-related structural alterations occurred in late-blind individuals within visual pathways that, presumably, are linked to higher order frontal language areas. PMID:25830371

Effect of ageing time on suckling lamb meat quality resulting from different carcass chilling regimes.

PubMed

Vieira, C; Fernández, A M

2014-02-01

The effect of ageing on suckling lamb carcasses subjected to three chilling treatments was studied: Conventional (2 °C for 24h), ultra-fast (-20 °C for 3.5h then 2 °C until 24h post mortem) and slow chilling (12 °C for 7h then 2 °C until 24h post mortem) treatments. Meat quality measurements were carried out in carcasses at 24h post mortem and also after 5 days of ageing. Carcass chilling losses were not affected by a chilling regime. Aged meat showed higher cooking losses than non-aged meat (p<0.05). Sarcomere length of ultra-fast t was shorter (p<0.05) than conventional and conventional was shorter than slow chilling treatment (p<0.05), at 24h and after 5 days of ageing. Conventional and ultra-fast chilling treatments resulted in higher shear force values at 24h post mortem (p<0.05) compared to slow treatment. All treatments improved sensory scores with ageing (p<0.05), but ultra-fast chilling treatment did not attain higher values as the other two treatments. © 2013.

Remotely-actuated biomedical switch

NASA Technical Reports Server (NTRS)

Lee, R. D.

1969-01-01

Remotely-actuated biomedical switching circuit using transistors consumes no power in the off position and can be actuated by a single-frequency telemetry pulse to control implanted instrumentation. Silicon controlled rectifiers permit the circuit design which imposes zero drain on supply batteries when not in use.

Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya

2011-01-07

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at themore » low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.« less

Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform

NASA Astrophysics Data System (ADS)

Li, Nanxi; Purnawirman, Purnawirman; Magden, E. Salih; Singh, Gurpreet; Singh, Neetesh; Baldycheva, Anna; Hosseini, Ehsan S.; Sun, Jie; Moresco, Michele; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Bradley, Jonathan D. B.; Watts, Michael R.

2018-02-01

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 +/- 0.3 kHz for the DPS-DFB laser, as compared to ΔγQPS = 30.4 +/- 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI). Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump absorption efficiency, increasing the output power, or enhancing the cavity Q.

Characterization of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric Langmuir-Blodgett polyvinylidene fluoride copolymer films for nondestructive random access memory applications

NASA Astrophysics Data System (ADS)

Reece, Timothy James

Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of their ability to combine high speed, low power consumption, and fast nondestructive readout with the potential for high density nonvolatile memory. The polarization of the ferroelectric is used to switch the channel at the silicon surface between states of high and low conductance. Among the ferroelectric thin films used in FET devices; the ferroelectric copolymer of Polyvinylidene fluoride, PVDF (C2H2F 2), with trifluoroethylene, TrFE (C2HF3), has distinct advantages, including low dielectric constant, low processing temperature, low cost and compatibility with organic semiconductors. By employing the Langmuir-Blodgett technique, films as thin as 1.8 nm can be deposited, reducing the operating voltage. An MFIS structure consisting of aluminum, 170 nm P(VDF-TrFE), 100 nm silicon oxide and n-type silicon exhibited low leakage current (˜1x10 -8 A/cm2), a large memory window (4.2 V) and operated at 35 Volts. The operating voltage was lowered through use of high k insulators like cerium oxide. A sample consisting of 25 nm P(VDF-TrFE), 30 nm cerium oxide and p-type silicon exhibited a 1.9 V window with 7 Volt gate amplitude. The leakage current in this case was considerably higher (1x10 -6 A/cm2). The characterization, modeling, and fabrication of metal-ferroelectricinsulator semiconductor (MFIS) structures based on these films are discussed.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

NASA Astrophysics Data System (ADS)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Approaching the ideal elastic strain limit in silicon nanowires

PubMed Central

Zhang, Hongti; Tersoff, Jerry; Xu, Shang; Chen, Huixin; Zhang, Qiaobao; Zhang, Kaili; Yang, Yong; Lee, Chun-Sing; Tu, King-Ning; Li, Ju; Lu, Yang

2016-01-01

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid–grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this “deep ultra-strength” for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising “elastic strain engineering” applications. PMID:27540586

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

DTIC Science & Technology

2011-11-01

stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR

Thermally tunable silicon racetrack resonators with ultralow tuning power.

PubMed

Dong, Po; Qian, Wei; Liang, Hong; Shafiiha, Roshanak; Feng, Dazeng; Li, Guoliang; Cunningham, John E; Krishnamoorthy, Ashok V; Asghari, Mehdi

2010-09-13

We present thermally tunable silicon racetrack resonators with an ultralow tuning power of 2.4 mW per free spectral range. The use of free-standing silicon racetrack resonators with undercut structures significantly enhances the tuning efficiency, with one order of magnitude improvement of that for previously demonstrated thermo-optic devices without undercuts. The 10%-90% switching time is demonstrated to be ~170 µs. Such low-power tunable micro-resonators are particularly useful as multiplexing devices and wavelength-tunable silicon microcavity modulators.

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Treesearch

Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

2014-01-01

Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

NASA Astrophysics Data System (ADS)

Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

2010-06-01

A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead-zirconate-titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

Optically initiated silicon carbide high voltage switch

DOEpatents

Caporaso, George J [Livermore, CA; Sampayan, Stephen E [Manteca, CA; Sullivan, James S [Livermore, CA; Sanders,; David, M [Livermore, CA

2011-02-22

An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

PubMed Central

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

2016-01-01

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology. PMID:26880381

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

NASA Astrophysics Data System (ADS)

Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Zhou, Fei; Pan, Chih-Hung; Chang, Ting-Chang; Lee, Jack C.

2016-02-01

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

Conductive bridging random access memory—materials, devices and applications

NASA Astrophysics Data System (ADS)

Kozicki, Michael N.; Barnaby, Hugh J.

2016-11-01

We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

CMOS-Compatible SOI MESFETS for Radiation-Hardened DC-to-DC Converters

NASA Technical Reports Server (NTRS)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2013-01-01

A radiation-tolerant transistor switch has been developed that can operate between 196 and +150 C for DC-to-DC power conversion applications. A prototype buck regulator component was demonstrated to be performing well after a total ionizing dose of 300 krad(Si). The prototype buck converters showed good efficiencies at ultra-high switching speeds in the range of 1 to 10 MHz. Such high switching frequency will enable smaller, lighter buck converters to be developed as part of the next project. Switching regulators are widely used in commercial applications including portable consumer electronics.

Ultra-fast boriding of metal surfaces for improved properties

DOEpatents

Timur, Servet; Kartal, Guldem; Eryilmaz, Osman L.; Erdemir, Ali

2015-02-10

A method of ultra-fast boriding of a metal surface. The method includes the step of providing a metal component, providing a molten electrolyte having boron components therein, providing an electrochemical boriding system including an induction furnace, operating the induction furnace to establish a high temperature for the molten electrolyte, and boriding the metal surface to achieve a boride layer on the metal surface.

Dynamically reconfigurable optical packet switch (DROPS)

NASA Astrophysics Data System (ADS)

Huang, Chi-Heng; Chou, Hsu-Feng; Bowers, John E.; Toudeh-Fallah, Farzam; Gyurek, Russ

2006-12-01

A novel Dynamically Reconfigurable Optical Packet Switch (DROPS) that combines both spectral and spatial switching capabilities is proposed and experimentally demonstrated for the first time. Compared with an Arrayed Waveguide Grating Router (AWGR), the added spatial switching capability provided by the microelectromechanical systems (MEMS) enables dynamically reconfigurable routing that is not possible with an AWGR alone. This methodology has several advantages over an AWGR including scalability, additional degrees of freedom in routing a packet from an ingress port to an egress port and more flexibility in path or line card recovery. The experimental demonstration implemented with 10-Gb/s packets shows that the added spatial switching does not degrade the bit-error-rate performance, indicating the promising potential of DROPS as a versatile and ultra-high capacity switch for optical packet-switched networks.

A single-stage optical load-balanced switch for data centers.

PubMed

Huang, Qirui; Yeo, Yong-Kee; Zhou, Luying

2012-10-22

Load balancing is an attractive technique to achieve maximum throughput and optimal resource utilization in large-scale switching systems. However current electronic load-balanced switches suffer from severe problems in implementation cost, power consumption and scaling. To overcome these problems, in this paper we propose a single-stage optical load-balanced switch architecture based on an arrayed waveguide grating router (AWGR) in conjunction with fast tunable lasers. By reuse of the fast tunable lasers, the switch achieves both functions of load balancing and switching through the AWGR. With this architecture, proof-of-concept experiments have been conducted to investigate the feasibility of the optical load-balanced switch and to examine its physical performance. Compared to three-stage load-balanced switches, the reported switch needs only half of optical devices such as tunable lasers and AWGRs, which can provide a cost-effective solution for future data centers.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

NASA Astrophysics Data System (ADS)

Olejník, K.; Schuler, V.; Marti, X.; Novák, V.; Kašpar, Z.; Wadley, P.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Garces, J.; Baumgartner, M.; Gambardella, P.; Jungwirth, T.

2017-05-01

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

NASA Astrophysics Data System (ADS)

Es-Sakhi, Azzedin D.

Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

Fast-switching chiral nematic liquid-crystal mode with polymer-sustained twisted vertical alignment.

PubMed

Chang, Kai-Han; Joshi, Vinay; Chien, Liang-Chy

2017-04-01

We demonstrate a fast-switching liquid-crystal mode with polymer-sustained twisted vertical alignment. By optimizing the polymerization condition, a polymer microstructure with controlled orientation is produced. The polymer microstructure not only synergistically suppresses the optical bounce during field-induced homeotropic-twist transition but also shortens the response time significantly. Theoretical analyses validate that the ground state free energy density is modified by the aligning field of the polymer microstructure, which affects the driving voltage of the device. The outcomes of this paper will enable the development of fast-switching and achromatic electro-optical and photonic devices.

Fast-switching chiral nematic liquid-crystal mode with polymer-sustained twisted vertical alignment

NASA Astrophysics Data System (ADS)

Chang, Kai-Han; Joshi, Vinay; Chien, Liang-Chy

2017-04-01

We demonstrate a fast-switching liquid-crystal mode with polymer-sustained twisted vertical alignment. By optimizing the polymerization condition, a polymer microstructure with controlled orientation is produced. The polymer microstructure not only synergistically suppresses the optical bounce during field-induced homeotropic-twist transition but also shortens the response time significantly. Theoretical analyses validate that the ground state free energy density is modified by the aligning field of the polymer microstructure, which affects the driving voltage of the device. The outcomes of this paper will enable the development of fast-switching and achromatic electro-optical and photonic devices.

Micro-machined thermo-conductivity detector

DOEpatents

Yu, Conrad

2003-01-01

A micro-machined thermal conductivity detector for a portable gas chromatograph. The detector is highly sensitive and has fast response time to enable detection of the small size gas samples in a portable gas chromatograph which are in the order of nanoliters. The high sensitivity and fast response time are achieved through micro-machined devices composed of a nickel wire, for example, on a silicon nitride window formed in a silicon member and about a millimeter square in size. In addition to operating as a thermal conductivity detector, the silicon nitride window with a micro-machined wire therein of the device can be utilized for a fast response heater for PCR applications.

Electro-Thermal Transient Simulation of Silicon Carbide Power Mosfet

DTIC Science & Technology

2013-06-01

ionization rate than electron in silicon carbide , the breakdown voltage almost remains constant even at elevated temperatures . This is due to the positive... temperature coefficient of holes in case of silicon carbide as discussed in [7, 8]. The higher ambient temperature influences the leakage current...in the RLC ring down circuit . E. Power Dissipation and Lattice Temperature The power dissipation for any switching device is dependent on the

Ablation experiment and threshold calculation of titanium alloy irradiated by ultra-fast pulse laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Buxiang; Jiang, Gedong; Wang, Wenjun, E-mail: wenjunwang@mail.xjtu.edu.cn

The interaction between an ultra-fast pulse laser and a material's surface has become a research hotspot in recent years. Micromachining of titanium alloy with an ultra-fast pulse laser is a very important research direction, and it has very important theoretical significance and application value in investigating the ablation threshold of titanium alloy irradiated by ultra-fast pulse lasers. Irradiated by a picosecond pulse laser with wavelengths of 1064 nm and 532 nm, the surface morphology and feature sizes, including ablation crater width (i.e. diameter), ablation depth, ablation area, ablation volume, single pulse ablation rate, and so forth, of the titanium alloymore » were studied, and their ablation distributions were obtained. The experimental results show that titanium alloy irradiated by a picosecond pulse infrared laser with a 1064 nm wavelength has better ablation morphology than that of the green picosecond pulse laser with a 532 nm wavelength. The feature sizes are approximately linearly dependent on the laser pulse energy density at low energy density and the monotonic increase in laser pulse energy density. With the increase in energy density, the ablation feature sizes are increased. The rate of increase in the feature sizes slows down gradually once the energy density reaches a certain value, and gradually saturated trends occur at a relatively high energy density. Based on the linear relation between the laser pulse energy density and the crater area of the titanium alloy surface, and the Gaussian distribution of the laser intensity on the cross section, the ablation threshold of titanium alloy irradiated by an ultra-fast pulse laser was calculated to be about 0.109 J/cm{sup 2}.« less

Compact high-pulse-energy passively Q-switched Nd:YLF laser with an ultra-low-magnification unstable resonator: application for efficient optical parametric oscillator.

PubMed

Cho, C Y; Huang, Y P; Huang, Y J; Chen, Y C; Su, K W; Chen, Y F

2013-01-28

We exploit an ultra-low-magnification unstable resonator to develop a high-pulse-energy side-pumped passively Q-switched Nd:YLF/Cr⁴⁺:YAG laser with improving beam quality. A wedged laser crystal is employed in the cavity to control the emissions at 1047 nm and 1053 nm independently through the cavity alignment. The pulse energies at 1047 nm and 1053 nm are found to be 19 mJ and 23 mJ, respectively. The peak powers for both wavelengths are higher than 2 MW. Furthermore, the developed Nd:YLF lasers are employed to pump a monolithic optical parametric oscillator for confirming the applicability in nonlinear wavelength conversions.

A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror

NASA Astrophysics Data System (ADS)

Sun, DeGui

2013-09-01

In a silicon-on-insulator (SOI) waveguide corner mirror (WCM) structure, with the quantum process of a frustrated total internal reflection (FTIR) phenomenon and the time delay principle in the two-dimensional potential barrier tunneling process of a mass of particles, we derive an accurate physical model for the Goos-Hanchen (GH) shift of optical guided-mode in the FTIR process, and in principle match the GH shift jumping states with the independent guided-modes. Then, we propose and demonstrate a new regime of 1 × N digital optical switches with a matching state between the free-carrier dispersion (FCD) based refractive index modulation (RIM) of silicon to create a GH shift jumping function of a photonic signal at the reflecting interface and the independent guided-modes in the FTIR process, where a MOS-capacitor type electro-optic modulation regime is proposed and discussed to realize an effective FCD-based RIM. At the critical matching state, i.e., the incident of an optical beam is at the vicinity of Brewster angle in the WCM, a mini-change of refractive index of waveguide material can cause a great jump of GH shift along the FTIR reflecting interface, and further a 1 × N digital optical switching process could be realized. For a 350-500 nm single-mode rib waveguide made on the 220 nm CMOS-compatible SOI substrate and with the FCD effect based RIM of silicon crystal, a concentration variation of 1018-1019 cm-3 has caused a 0.5-2.5 μm GH shift of reflected beam, which is at 2-5 times of a mode-size and hence radically convinces an optical switching function with a 1 × 3-1 × 10 scale.

Optimization of ferroelectric liquid crystal optically addressed spatial light modulator performance

NASA Astrophysics Data System (ADS)

Perennes, Frederic; Crossland, William A.

1997-08-01

The switching mechanisms of ferroelectric liquid crystal optically addressed spatial light modulators (OASLMs) using a photosensitive structure made of an intrinsic amorphous silicon layer sandwiched in between an indium tin oxide coated glass sheet and a reflective metal layer are reviewed. Devices based on photoconductor and photodiode layers are briefly reviewed and attention is focused on pixelated metal mirror devices, which offer fast switching and good optical characteristics with the same sensitivity range as the photodiode OASLMs. They are particularly suitable for high frame rate SLMs with intense read beams. Optimum drive conditions for this type of device are considered. An equivalent electrical circuit is proposed for the photosensitive structure and the voltage drop across the liquid crystal layer is investigated and related to the optical response of the device. Experimental work is carried out to demonstrate the validity of our equivalent circuit. We show that the synchronization of a light source with the case pulse enables the OASLM to work at frame rates of a few kilohertz. We also demonstrate that the exact synchronization of the write light source with the write pulse enhances the potential memory of the device.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

Silicon waveguide with four zero-dispersion wavelengths and its application in on-chip octave-spanning supercontinuum generation.

PubMed

Zhang, Lin; Lin, Qiang; Yue, Yang; Yan, Yan; Beausoleil, Raymond G; Willner, Alan E

2012-01-16

We propose a novel silicon waveguide that exhibits four zero-dispersion wavelengths for the first time, to the best of our knowledge, with a flattened dispersion over a 670-nm bandwidth. This holds a great potential for exploration of new nonlinear effects and achievement of ultra-broadband signal processing on a silicon chip. As an example, we show that an octave-spanning supercontinuum assisted by dispersive wave generation can be obtained in silicon, over a wavelength range from 1217 to 2451 nm, almost from bandgap wavelength to half-bandgap wavelength. Input pulse is greatly compressed to 10 fs.

Pulse generator using transistors and silicon controlled rectifiers produces high current pulses with fast rise and fall times

NASA Technical Reports Server (NTRS)

Woolfson, M. G.

1966-01-01

Electrical pulse generator uses power transistors and silicon controlled rectifiers for producing a high current pulse having fast rise and fall times. At quiescent conditions, the standby power consumption of the circuit is equal to zero.

Experimental evidence of new tetragonal polymorphs of silicon formed through ultrafast laser-induced confined microexplosion

DOE PAGES

Rapp, L.; Haberl, B.; Pickard, C. J.; ...

2015-06-29

Ordinary materials can transform into novel phases with new crystal structures at extraordinary high pressure and temperature applied under both equilibrium and non-equilibrium conditions 1-6. The recently developed method of ultra-short laser-induced confined microexplosions 7-9 extends the range of possible new phases by initiating a highly non-equilibrium plasma state deep inside a bulk material 7-12. Ultra-high quenching rates can help to overcome kinetic barriers to the formation of new metastable phases, while the surrounding pristine crystal confines the affected material and preserves it for further study 10-12. Here we demonstrate that ultra-rapid pressure release from a completely disordered plasma statemore » in silicon produces several new metastable end phases quenched to ambient conditions. Their structure is determined from comparison to an ab initio random structure search which revealed six new energetically competitive potential phases, four tetragonal and two monoclinic ones. We show the presence of bt8 and st12, which have been predicted theoretically previously 13-15, but have not been observed in nature or in laboratory experiments. Additionally, the presence of the as yet unidentified silicon phase, Si-VIII and two of our other predicted tetragonal phases are highly likely within laser-affected zones. These findings pave the way for new materials with novel and exotic properties.« less

Silicon-graphene conductive photodetector with ultra-high responsivity

PubMed Central

Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

2017-01-01

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

DOE PAGES

Bergmann, Benedikt; Pospisil, Stanislav; Caicedo, Ivan; ...

2016-06-01

In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated.more » Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.« less

Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergmann, Benedikt; Pospisil, Stanislav; Caicedo, Ivan

In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated.more » Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.« less

Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.

PubMed

Tanaka, Daiki; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Toyosaki, Tatsuya; Ikuma, Yuichiro; Tsuda, Hiroyuki

2012-04-23

We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively. © 2012 Optical Society of America

N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

NASA Astrophysics Data System (ADS)

Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

2017-06-01

N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

Coaxial fast metal-to-metal switch for high current.

PubMed

Boissady, C; Rioux-Damidau, F

1978-11-01

A fast mechanical switch of coaxial configuration, driven by a magnetic field, is described. It presents a low inductance (6 nH), a low resistance (3 muOmega) and delay-times of 25 micros with a jitter of 0.08 micros.

Photo-generated metamaterials induce modulation of CW terahertz quantum cascade lasers

PubMed Central

Mezzapesa, Francesco P.; Columbo, Lorenzo L.; Rizza, Carlo; Brambilla, Massimo; Ciattoni, Alessardro; Dabbicco, Maurizio; Vitiello, Miriam S.; Scamarcio, Gaetano

2015-01-01

Periodic patterns of photo-excited carriers on a semiconductor surface profoundly modifies its effective permittivity, creating a stationary all-optical quasi-metallic metamaterial. Intriguingly, one can tailor its artificial birefringence to modulate with unprecedented degrees of freedom both the amplitude and phase of a quantum cascade laser (QCL) subject to optical feedback from such an anisotropic reflector. Here, we conceive and devise a reconfigurable photo-designed Terahertz (THz) modulator and exploit it in a proof-of-concept experiment to control the emission properties of THz QCLs. Photo-exciting sub-wavelength metastructures on silicon, we induce polarization-dependent changes in the intra-cavity THz field, that can be probed by monitoring the voltage across the QCL terminals. This inherently flexible approach promises groundbreaking impact on THz photonics applications, including THz phase modulators, fast switches, and active hyperbolic media. PMID:26549166

78 FR 49308 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-13

... latency fiber connection option, and provide a waiver of installation fees for subscriptions through..., including a 40Gb fiber connection, a 10Gb fiber connection, a 1Gb fiber connection, and a 1Gb copper... fiber connection offering, which uses new ultra- low latency switches.\\4\\ A switch is a type of network...

FastChem: An ultra-fast equilibrium chemistry

NASA Astrophysics Data System (ADS)

Kitzmann, Daniel; Stock, Joachim

2018-04-01

FastChem is an equilibrium chemistry code that calculates the chemical composition of the gas phase for given temperatures and pressures. Written in C++, it is based on a semi-analytic approach, and is optimized for extremely fast and accurate calculations.

Innovative Processing of Composites for Ultra-High Temperature Applications. Book 3

DTIC Science & Technology

1993-11-01

SiC Samples Prepared with Four Preceramic Polymer Infiltration / Pyrolysis (at 15750C) Cycles Figure 21 Scanning Electron...Micrograph of Large Pores near the Surface of Siliconized SIC Sample with Four Preceramic Polymer Infiltration / Pyrolysis (at 1575*C) Cycles II...In order to achieve dense, bulk composites with maximum SiC /Si ratio, two infiltration / pyrolysis cycles were used. S (4) After siliconization,

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C. Y.

1977-01-01

A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

PubMed

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.; Hawkins, Steven A.

An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

Probing Photoinduced Structural Phase Transitions by Fast or Ultra-Fast Time-Resolved X-Ray Diffraction

NASA Astrophysics Data System (ADS)

Cailleau, Hervé Collet, Eric; Buron-Le Cointe, Marylise; Lemée-Cailleau, Marie-Hélène Koshihara, Shin-Ya

A new frontier in the field of structural science is the emergence of the fast and ultra-fast X-ray science. Recent developments in time-resolved X-ray diffraction promise direct access to the dynamics of electronic, atomic and molecular motions in condensed matter triggered by a pulsed laser irradiation, i.e. to record "molecular movies" during the transformation of matter initiated by light pulse. These laser pump and X-ray probe techniques now provide an outstanding opportunity for the direct observation of a photoinduced structural phase transition as it takes place. The use of X-ray short-pulse of about 100ps around third-generation synchrotron sources allows structural investigations of fast photoinduced processes. Other new X-ray sources, such as laser-produced plasma ones, generate ultra-short pulses down to 100 fs. This opens the way to femtosecond X-ray crystallography, but with rather low X-ray intensities and more limited experimental possibilities at present. However this new ultra-fast science rapidly progresses around these sources and new large-scale projects exist. It is the aim of this contribution to overview the state of art and the perspectives of fast and ultra-fast X-ray scattering techniques to study photoinduced phase transitions (here, the word ultra-fast is used for sub-picosecond time resolution). In particular we would like to largely present the contribution of crystallographic methods in comparison with optical methods, such as pump-probe reflectivity measurements, the reader being not necessary familiar with X-ray scattering. Thus we want to present which type of physical information can be obtained from the positions of the Bragg peaks, their intensity and their shape, as well as from the diffuse scattering beyond Bragg peaks. An important physical feature is to take into consideration the difference in nature between a photoinduced phase transition and conventional homogeneous photoinduced chemical or biochemical processes where molecules transform in an independent way each other. Actually the photoinduced phase transition with the establishment of the new electronic and structural oscopic order is preceded by precursor co-operative phenomena due to the formation of nano-scale correlated objects. These are the counterpart of pre-transitional fluctuations at thermal equilibrium which take place above the transition temperature (short range order preceding long range one). Moreover ultra-fast X-ray scattering will play a central role within the fascinating field of manipulating coherence, for instance to directly observe coherent atomic motions induced by a light pulse, such as optical phonons. In the first part of this contribution we present what experimental features are accessible by X-ray scattering to describe the physical picture for a photoinduced structural phase transition. The second part shows how a time-resolved X-ray scattering experiment can be performed with regards to the different pulsed X-ray sources. The first time-resolved X-ray diffraction experiments on photoinduced phase transitions are described and discussed in the third part. Finally some challenges for future are briefly indicated in the conclusion.

All-optical tunable dual Fano resonance in nonlinear metamaterials in optical communication range

NASA Astrophysics Data System (ADS)

Zhou, Yi; Hu, Xiaoyong; Li, Chong; Yang, Hong; Gong, Qihuang

2018-01-01

Low-power, ultra-fast all-optical tunable dual Fano resonance was realized in a metamaterial coated with a non-linear nanocomposite layer composed of gold nanoparticle-doped polycrystalline barium strontium titanate and multilayer tungsten disulphide microsheets. A high non-linear refractive index of -2.148 × 10-11 m2/W was achieved in the nanocomposite material that originated in the non-linearity enhancement associated with the quantum confinement effect, the local-field enhancement effect, and reinforced interactions between photons and the multilayer tungsten disulphide microsheets. An ultra-low threshold pump intensity of 600 kW/cm2 was obtained. An ultra-fast response time of 25.4 ps was maintained because of the fast relaxation dynamics of the bound electrons in the nanoscale polycrystalline barium strontium titanate grains. The large third-order non-linear responses of the metamaterial were confirmed with a high third harmonic generation conversion efficiency of 5.4 × 10-5. This work may help to pave the way towards realization of ultra-high-speed information processing chips and multifunctional integrated photonic devices based on metamaterials.

Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition

NASA Astrophysics Data System (ADS)

Sahu, Vikas Kumar; Das, Amit K.; Ajimsha, R. S.; Misra, P.

2018-05-01

The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2/Pt devices were found to be ~250 µs and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.

Optical properties of new wide heterogeneous waveguides with thermo optical shifters.

PubMed

De Leonardis, Francesco; Tsarev, Andrei V; Passaro, Vittorio M

2008-12-22

We present analysis and simulation of novel silicon-on-insulator (SOI) heterogeneous waveguides with thermo-optic phase shifters. New structure design contains a p-n junction on both sides of SOI ridge waveguide with 220 nm x 35 microm silicon core. Strongly mode-dependent optical losses (by additional free charge absorption) provide quasi-singe-mode behavior of wide waveguide with mode size approximately 10 microm. Local heater produces an efficient phase shifting by small temperature increase (DeltaT approximately 2K), switching power (< 40 mW) and switching time (< 10 micros). Mode optical losses are significantly decreased at high heating (DeltaT approximately 120 K).

Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices

DTIC Science & Technology

2016-09-01

DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release; distribution unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT The silicon carbide...the pulse evaluation circuit used to evaluate a SiC SGTO device under extreme pulsed current switching conditions. 15. SUBJECT TERMS silicon carbide...development effort. We would also like to thank Dr Sei-Hyung Ryu and Dr Jon Zhang of Cree, Inc., for providing the silicon carbide “super” gate-turn

Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-08-01

We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

"Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

NASA Astrophysics Data System (ADS)

Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

2013-04-01

During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Ultrawide band switching: gas and oil breakdown research

NASA Astrophysics Data System (ADS)

Agee, Forrest J.; Lehr, Jane M.; Prather, William D.; Scholfield, David W.

1997-10-01

The generation of Ultra-Wide Band Pulses nanoseconds is a challenging problem that involves generating pulses with 100 pico-second rise times and voltage of 500 kV with pulse widths of the order of less than one to a few nanoseconds. A critical step involves switching high voltages with precision. The use of both gas and oil for the switching insulating medium have been accomplished with varying results. The Phillips Laboratory is pursuing both media in the gas switched Hindenburg series of pulsers and in the study of oil switches that promise good performance in compact packages. This paper reports on progress in gas switching associated with the new H-5 pulser and with the use of earlier Hindenburg pulsers to investigate the UWB properties of oil switches. We compare the design strategies and techniques of oil and gas switching in the context of pulsers of interest.

Ultra-fast speech comprehension in blind subjects engages primary visual cortex, fusiform gyrus, and pulvinar – a functional magnetic resonance imaging (fMRI) study

PubMed Central

2013-01-01

Background Individuals suffering from vision loss of a peripheral origin may learn to understand spoken language at a rate of up to about 22 syllables (syl) per second - exceeding by far the maximum performance level of normal-sighted listeners (ca. 8 syl/s). To further elucidate the brain mechanisms underlying this extraordinary skill, functional magnetic resonance imaging (fMRI) was performed in blind subjects of varying ultra-fast speech comprehension capabilities and sighted individuals while listening to sentence utterances of a moderately fast (8 syl/s) or ultra-fast (16 syl/s) syllabic rate. Results Besides left inferior frontal gyrus (IFG), bilateral posterior superior temporal sulcus (pSTS) and left supplementary motor area (SMA), blind people highly proficient in ultra-fast speech perception showed significant hemodynamic activation of right-hemispheric primary visual cortex (V1), contralateral fusiform gyrus (FG), and bilateral pulvinar (Pv). Conclusions Presumably, FG supports the left-hemispheric perisylvian “language network”, i.e., IFG and superior temporal lobe, during the (segmental) sequencing of verbal utterances whereas the collaboration of bilateral pulvinar, right auditory cortex, and ipsilateral V1 implements a signal-driven timing mechanism related to syllabic (suprasegmental) modulation of the speech signal. These data structures, conveyed via left SMA to the perisylvian “language zones”, might facilitate – under time-critical conditions – the consolidation of linguistic information at the level of verbal working memory. PMID:23879896

Fast switching of bistable magnetic nanowires through collective spin reversal

NASA Astrophysics Data System (ADS)

Vindigni, Alessandro; Rettori, Angelo; Bogani, Lapo; Caneschi, Andrea; Gatteschi, Dante; Sessoli, Roberta; Novak, Miguel A.

2005-08-01

The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic states difficult. We suggest that finite-size segments can show a fast switching if collective reversal of the spins is taken into account. This mechanism gives rise at low temperatures to a scaling law for the dynamic susceptibility that has been experimentally observed for the dilute molecular chain Co(hfac)2NitPhOMe. These results suggest a possible way of engineering nanowires for fast switching of the magnetization.

Patterning of OPV modules by ultra-fast laser

NASA Astrophysics Data System (ADS)

Kubiš, Peter; Lucera, Luca; Guo, Fei; Spyropolous, George; Voigt, Monika M.; Brabec, Christoph J.

2014-10-01

A novel production process combining slot-die coating, transparent flexible IMI (ITO-Metal-ITO) electrodes and ultra-fast laser ablation can be used for the realization of P3HT:PCBM based thin film flexible OPV modules. The fast and precise laser ablation allows an overall efficiency over 3 % and a device geometric fill factor (GFF) over 95 %. Three functional layers can be ablated using the same wavelength only with varying the laser fluence and overlap. Different OPV device architectures with multilayers utilizing various materials are challenging for ablation but can be structured by using a systematical approach.

Pump-probe micro-spectroscopy by means of an ultra-fast acousto-optics delay line.

PubMed

Audier, Xavier; Balla, Naveen; Rigneault, Hervé

2017-01-15

We demonstrate femtosecond pump-probe transient absorption spectroscopy using a programmable dispersive filter as an ultra-fast delay line. Combined with fast synchronous detection, this delay line allows for recording of 6 ps decay traces at 34 kHz. With such acquisition speed, we perform single point pump-probe spectroscopy on bulk samples in 80 μs and hyperspectral pump-probe imaging over a field of view of 100 μm in less than a second. The usability of the method is illustrated in a showcase experiment to image and discriminate between two pigments in a mixture.

Stress analysis of ultra-thin silicon chip-on-foil electronic assembly under bending

NASA Astrophysics Data System (ADS)

Wacker, Nicoleta; Richter, Harald; Hoang, Tu; Gazdzicki, Pawel; Schulze, Mathias; Angelopoulos, Evangelos A.; Hassan, Mahadi-Ul; Burghartz, Joachim N.

2014-09-01

In this paper we investigate the bending-induced uniaxial stress at the top of ultra-thin (thickness \\leqslant 20 μm) single-crystal silicon (Si) chips adhesively attached with the aid of an epoxy glue to soft polymeric substrate through combined theoretical and experimental methods. Stress is first determined analytically and numerically using dedicated models. The theoretical results are validated experimentally through piezoresistive measurements performed on complementary metal-oxide-semiconductor (CMOS) transistors built on specially designed chips, and through micro-Raman spectroscopy investigation. Stress analysis of strained ultra-thin chips with CMOS circuitry is crucial, not only for the accurate evaluation of the piezoresistive behavior of the built-in devices and circuits, but also for reliability and deformability analysis. The results reveal an uneven bending-induced stress distribution at the top of the Si-chip that decreases from the central area towards the chip's edges along the bending direction, and increases towards the other edges. Near these edges, stress can reach very high values, facilitating the emergence of cracks causing ultimate chip failure.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides.

PubMed

Choi, Ju Won; Chen, George F R; Ng, D K T; Ooi, Kelvin J A; Tan, Dawn T H

2016-06-08

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra - silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W(-1)/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two - fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendrickson, Scott M.; Foster, Amy C.; Camacho, Ryan M.

In this paper, we provide a review of recent progress in integrated nonlinear photonics with a focus on emerging applications in all-optical signal processing, ultra-low-power all-optical switching, and quantum information processing.

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

NASA Astrophysics Data System (ADS)

Lim, Daniel J.; Ki, Hyungson; Mazumder, Jyoti

2006-06-01

A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 108-109 W cm-2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases.

Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

DOEpatents

Ownby, G.W.; White, C.W.; Zehner, D.M.

1979-12-28

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an atomically clean region. This can be accomplished in a system at a pressure below 10-/sup 8/ Torr, using Q-switched ruber-laser pulses having an energy density in the range of from about 60 to 190 MW/cm/sup 2/.

Method using laser irradiation for the production of atomically clean crystalline silicon and germanium surfaces

DOEpatents

Ownby, Gary W.; White, Clark W.; Zehner, David M.

1981-01-01

This invention relates to a new method for removing surface impurities from crystalline silicon or germanium articles, such as off-the-shelf p- or n-type wafers to be doped for use as junction devices. The principal contaminants on such wafers are oxygen and carbon. The new method comprises laser-irradiating the contaminated surface in a non-reactive atmosphere, using one or more of Q-switched laser pulses whose parameters are selected to effect melting of the surface without substantial vaporization thereof. In a typical application, a plurality of pulses is used to convert a surface region of an off-the-shelf silicon wafer to an automatically clean region. This can be accomplished in a system at a pressure below 10.sup.-8 Torr, using Q-switched ruby-laser pulses having an energy density in the range of from about 60 to 190 MW/cm.sup.2.

The Ultrathin Limit and Dead-layer Effects in Local Polarization Switching of BiFeO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maksymovych, Petro; Huijben, Mark; Pan, Minghu

Using piezoresponse force microscopy in ultra-high vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 down to ~ 4 unit cells. Local remnant piezoresponse was used to infer the applied electric field inside the ferroelectric volume, and account for the elusive effect of dead-layers in ultrathin films. The dead-layer manifested itself in the slower than anticipated decrease of the switching bias with film thickness, yielding apparent Kay-Dunn scaling of the switching field, while the statistical analysis of hysteresis loops revealed lateral variation of the dead-layer with sub-10 nm resolution.

High-performance and power-efficient 2×2 optical switch on Silicon-on-Insulator.

PubMed

Han, Zheng; Moille, Grégory; Checoury, Xavier; Bourderionnet, Jérôme; Boucaud, Philippe; De Rossi, Alfredo; Combrié, Sylvain

2015-09-21

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

Conformal chemically resistant coatings for microflow devices

DOEpatents

Folta, James A.; Zdeblick, Mark

2003-05-13

A process for coating the inside surfaces of silicon microflow devices, such as electrophoresis microchannels, with a low-stress, conformal (uniform) silicon nitride film which has the ability to uniformly coat deeply-recessed cavities with, for example, aspect ratios of up to 40:1 or higher. The silicon nitride coating allows extended exposure to caustic solutions. The coating enables a microflow device fabricated in silicon to be resistant to all classes of chemicals: acids, bases, and solvents. The process involves low-pressure (vacuum) chemical vapor deposition. The ultra-low-stress silicon nitride deposition process allows 1-2 .mu.m thick films without cracks, and so enables extended chemical protection of a silicon microflow device against caustics for up to 1 year. Tests have demonstrated the resistance of the films to caustic solutions at both ambient and elevated temperatures to 65.degree. C.

Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

NASA Astrophysics Data System (ADS)

Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2018-02-01

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

DTIC Science & Technology

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

Ultra-fast dynamics in the nonlinear optical response of silver nanoprism ordered arrays.

PubMed

Sánchez-Esquivel, Héctor; Raygoza-Sanchez, Karen Y; Rangel-Rojo, Raúl; Kalinic, Boris; Michieli, Niccolò; Cesca, Tiziana; Mattei, Giovanni

2018-03-15

In this work we present the study of the ultra-fast dynamics of the nonlinear optical response of a honeycomb array of silver triangular nanoprisms, performed using a femtosecond pulsed laser tuned with the dipolar surface plasmon resonance of the nanoarray. Nonlinear absorption and refraction, and their time-dependence, were explored using the z-scan and time-resolved excite-probe techniques. Nonlinear absorption is shown to change sign with the input irradiance and the behavior was explained on the basis of a three-level model. The response time was determined to be in the picosecond regime. A technique based on a variable frequency chopper was also used in order to discriminate the thermal and electronic contributions to the nonlinearity, which were found to have opposite signs. All these findings propel the investigated nanoprism arrays as good candidates for applications in advanced ultra-fast nonlinear nanophotonic devices.

Ultra-fast framing camera tube

DOEpatents

Kalibjian, Ralph

1981-01-01

An electronic framing camera tube features focal plane image dissection and synchronized restoration of the dissected electron line images to form two-dimensional framed images. Ultra-fast framing is performed by first streaking a two-dimensional electron image across a narrow slit, thereby dissecting the two-dimensional electron image into sequential electron line images. The dissected electron line images are then restored into a framed image by a restorer deflector operated synchronously with the dissector deflector. The number of framed images on the tube's viewing screen is equal to the number of dissecting slits in the tube. The distinguishing features of this ultra-fast framing camera tube are the focal plane dissecting slits, and the synchronously-operated restorer deflector which restores the dissected electron line images into a two-dimensional framed image. The framing camera tube can produce image frames having high spatial resolution of optical events in the sub-100 picosecond range.

E-field induced resistive switch in metal/praseodymium calcium manganite interfaces: A model for future nonvolatile memory devices

NASA Astrophysics Data System (ADS)

Das, Nilanjan

Among the various candidates for non-volatile random access memory (RAM), interfacial resistive switch in Ag/Pr0.7Ca0.3 MnO3 (PCMO) configuration has drawn major attention in recent years due to its potential as a high storage density (˜ terabyte) device. However, the diverse nature of the resistive switch in different systems makes the development of a unifying model for its underlying physics very difficult. This dissertation will address both issues, namely, characterization of switches for device applications and development of a system-independent generic model, in detail. In our work, we have studied the properties electric pulse induced interfacial switch in electrode/PCMO system. A very fast speed ("write speed") of 100 ns, threshold ("programming voltage") as low as 2 V (for micro electrodes), and non-volatility ("data retention") of switched states have been achieved. A clear distinction between fast switch and sub-threshold slow quasistatic-dc switch has been made. Results obtained from time-dependence studies and impedance spectroscopy suggest that defect creation/annihilation, such as broken bonds (under very high field at interface, 107V/cm), is likely the mechanism for the sub-micros fast switching. On the other hand, slow accumulative process, such as electromigration of point defects, are responsible for the subthreshold quasi-dc switch. Scanning probe imaging has revealed the nanoscale inhomogeneity of the switched surfaces, essential for observing a resistive switch. Evolution of such structures has been observed under surface pre-training. Device scalability has been tested by creating reversible modification of surface conductivities with atomic force microscopy, thus creating the "nano-switch" (limited to a region of 10--100 nm).

MEMS switches having non-metallic crossbeams

NASA Technical Reports Server (NTRS)

Scardelletti, Maximillian C (Inventor)

2009-01-01

A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

Application of Multi-Threshold NULL Convention Logic to Adaptive Beamforming Circuits for Ultra-Low Power

DTIC Science & Technology

2016-03-31

Abstract: With the decrease of transistor feature sizes into the ultra-deep submicron range, leakage power becomes an important design challenge for...MTNCL design showed substantial improvements in terms of active energy and leakage power compared to the equivalent synchronous design. Keywords...switching could use a large portion of power. Additionally, leakage power has come to dominate power consumption as process sizes shrink. Adaptive

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

Construction of large scale switch matrix by interconnecting integrated optical switch chips with EDFAs

NASA Astrophysics Data System (ADS)

Liao, Mingle; Wu, Baojian; Hou, Jianhong; Qiu, Kun

2018-03-01

Large scale optical switches are essential components in optical communication network. We aim to build up a large scale optical switch matrix by the interconnection of silicon-based optical switch chips using 3-stage CLOS structure, where EDFAs are needed to compensate for the insertion loss of the chips. The optical signal-to-noise ratio (OSNR) performance of the resulting large scale optical switch matrix is investigated for TE-mode light and the experimental results are in agreement with the theoretical analysis. We build up a 64 ×64 switch matrix by use of 16 ×16 optical switch chips and the OSNR and receiver sensibility can respectively be improved by 0.6 dB and 0.2 dB by optimizing the gain configuration of the EDFAs.

Depletion of penicillin G residues in sows after intramuscular injection

USDA-ARS?s Scientific Manuscript database

In 2011, the Food Safety Inspection Service (FSIS) switched from using the Fast Antimicrobial Screen Test (FAST) for screening animal tissues for penicillin to using the Charm-Kidney Inhibition Swab test (KIS). The switch provided a quicker test and lower detection limits for penicillin when used o...

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirshafieyan, Seyed Sadreddin; Luk, Ting S.; Guo, Junpeng

Here, we demonstrated perfect light absorption in optical nanocavities made of ultra-thin percolation aluminum and silicon films deposited on an aluminum surface. The total layer thickness of the aluminum and silicon films is one order of magnitude less than perfect absorption wavelength in the visible spectral range. The ratio of silicon cavity layer thickness to perfect absorption wavelength decreases as wavelength decreases due to the increased phase delays at silicon-aluminum boundaries at shorter wavelengths. It is explained that perfect light absorption is due to critical coupling of incident wave to the fundamental Fabry-Perot resonance mode of the structure where themore » round trip phase delay is zero. Simulations were performed and the results agree well with the measurement results.« less

Silicon/III-V laser with super-compact diffraction grating for WDM applications in electronic-photonic integrated circuits.

PubMed

Wang, Yadong; Wei, Yongqiang; Huang, Yingyan; Tu, Yongming; Ng, Doris; Lee, Cheewei; Zheng, Yunan; Liu, Boyang; Ho, Seng-Tiong

2011-01-31

We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less

Ultra-broadband and low-loss 3  dB optical power splitter based on adiabatic tapered silicon waveguides.

PubMed

Wang, Yang; Gao, Shitao; Wang, Ke; Skafidas, Efstratios

2016-05-01

A broadband, low-loss and polarization-insensitive 3 dB optical power splitter based on adiabatic tapered silicon waveguides is proposed and investigated. 3D-FDTD simulation results show that the splitter achieves an output transmission efficiency of nearly 50% over an ultra-broad wavelength range from 1200 to 1700 nm. The device is fabricated, and experimental results show that the splitter exhibits a low excess loss of <0.19  dB for the TE polarization and <0.14  dB for the TM polarization over the entire measured wavelength range from 1530 to 1600 nm, while having an adiabatic taper length of only 5 μm. In addition, the measured power uniformity of the cascaded 1×8 splitter is only 0.47 dB, and 0.17 dB for the TE and TM polarizations, respectively. With the advantages of low loss, broad bandwidth, and compact size, the proposed splitter is a promising element for large-scale silicon integrated photonic circuits.

The influence of thermal and free carrier dispersion effects on all-optical wavelength conversion in a silicon racetrack-shaped microring resonator

NASA Astrophysics Data System (ADS)

Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Shaopeng; Han, Jing

2016-07-01

We experimentally demonstrate ultra-low pump power wavelength conversion based on four-wave mixing in a silicon racetrack-shaped microring resonator. When the pump and signal are located at the resonance wavelengths, wavelength conversion with a pump power of only 1 mW can be realized in this microring resonator because of the resonant enhancement of the device. However, saturation of the conversion efficiency occurs because of the shift of the resonance peak, which is caused by the change of the effective refractive index induced by a combination of thermal and free carrier dispersion effects, and it is demonstrated that the thermal effect is the leading-order factor for the change of the refractive index. The maximum conversion efficiency of  -21 dB is obtained when the pump power is less than 12 mW. This ultra-low-power on-chip wavelength convertor based on a silicon microring resonator can find important potential applications in highly integrated optical circuits for all-optical signal processing.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Method to optimize optical switch topology for photonic network-on-chip

NASA Astrophysics Data System (ADS)

Zhou, Ting; Jia, Hao

2018-04-01

In this paper, we propose a method to optimize the optical switch by substituting optical waveguide crossings for optical switching units and an optimizing algorithm to complete the optimization automatically. The functionality of the optical switch remains constant under optimization. With this method, we simplify the topology of optical switch, which means the insertion loss and power consumption of the whole optical switch can be effectively minimized. Simulation result shows that the number of switching units of the optical switch based on Spanke-Benes can be reduced by 16.7%, 20%, 20%, 19% and 17.9% for the scale from 4 × 4 to 8 × 8 respectively. As a proof of concept, the experimental demonstration of an optimized six-port optical switch based on Spanke-Benes structure by means of silicon photonics chip is reported.

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

PubMed

Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

2017-10-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

DOE PAGES

Diroll, Benjamin T.; Schramke, Katelyn S.; Guo, Peijun; ...

2017-09-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective massmore » at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Phase-shifter using submicron silicon waveguide couplers with ultra-small electro-mechanical actuator.

PubMed

Ikeda, Taro; Takahashi, Kazunori; Kanamori, Yoshiaki; Hane, Kazuhiro

2010-03-29

Phase shifter is an important part of optical waveguide circuits as used in interferometer. However, it is not always easy to generate a large phase shift in a small region. Here, a variable phase-shifter operating as delay-line of silicon waveguide was designed and fabricated by silicon micromachining. The proposed phase-shifter consists of a freestanding submicron-wide silicon waveguide with two waveguide couplers and an ultrasmall silicon comb-drive actuator. The position of the freestanding waveguide is moved by the actuator to vary the total optical path. Phase-shift was measured in a Mach-Zehnder interferometer to be 3.0pi at the displacement of 1.0 mum at the voltage of 31 V. The dimension of the fabricated device is 50microm wide and 85microm long.

Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Singh, Kirandeep; Kaur, Davinder

2017-02-01

The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

Plasmonic phased array feeder enabling ultra-fast beam steering at millimeter waves.

PubMed

Bonjour, R; Burla, M; Abrecht, F C; Welschen, S; Hoessbacher, C; Heni, W; Gebrewold, S A; Baeuerle, B; Josten, A; Salamin, Y; Haffner, C; Johnston, P V; Elder, D L; Leuchtmann, P; Hillerkuss, D; Fedoryshyn, Y; Dalton, L R; Hafner, C; Leuthold, J

2016-10-31

In this paper, we demonstrate an integrated microwave phoneeded for beamtonics phased array antenna feeder at 60 GHz with a record-low footprint. Our design is based on ultra-compact plasmonic phase modulators (active area <2.5µm²) that not only provide small size but also ultra-fast tuning speed. In our design, the integrated circuit footprint is in fact only limited by the contact pads of the electrodes and by the optical feeding waveguides. Using the high speed of the plasmonic modulators, we demonstrate beam steering with less than 1 ns reconfiguration time, i.e. the beam direction is reconfigured in-between 1 GBd transmitted symbols.

Overview of new GNSS tropospheric products for GNSS-meteorology and their assessment at Geodetic Observatory Pecny (CZ)

NASA Astrophysics Data System (ADS)

Dousa, J.; Vaclavovic, P.; Gyori, G.

2012-12-01

Geodetic Observatory Pecný (GOP) has a long-term experience in the estimation of precise tropospheric parameters from GNSS permanent stations, in particular under the limited timelines of near real time. More than a decade, the GOP zenith total delays (ZTD) contributed to various projects in Europe (COST-716, TOUGH, E-GVAP, E-GVAP II) and the operational ZTD hourly updated product flows via the meteorological observation exchange network - GTS - to the end users worldwide. Currently, the GOP regional ZTD product is operationally assimilated in Météo France and UK MetOffice at least and further exploited in various ways at many other meteorological institutions. New developments at GOP over last three years consist of a) implementation and assessment of the global hourly ZTD product of about 170 stations, b) implementation of routine multi-GNSS (GPS+GLONASS) ZTD European product, and c) implementation of ultra-fast/real-time ZTD product. The GOP global ZTD product has been implemented on request of the meteorological institutions running global numerical weather forecasting models. The global ZTD product was seriously evaluated over ten months (Oct 2009 - Aug 2011) when compared to reprocessed EUREF and IGS ZTDs, radiosondes and ZTDs derived from UK MetOffice's global numerical weather model. After the evaluation (and on special request of UK MetOffice) the product has been switched from testing to operational status within the framework of the EUMETNET EIG GPS Water Vapour Programme (E-GVAP) and officially disseminated via the GTS network. The GOP multi-GNSS ZTD solution has been tested since 2009 shortly after developing GOP ultra-rapid GPS+GLONASS orbits for the International GNSS Service (IGS). A specific bias of mean value 1.5 mm was identified between GPS- and GLONASS-only ZTD at that time, and relation to the IGS05 antenna phase centre offset and variation models (PCO+PCV) identified. Consequently, the implementation of a routine operation has been done after the GPS week 1632 together with adopting IGS08 PCO+PCVs, which eliminated the bias and demonstrated an overall general better consistence between GPS- and GLONASS-only ZTD estimates. The multi-GNSS ZTD product runs in parallel to the GPS-only and is going to replace the current official GPS-only product after more than a year assessment. This multi-GNSS product has assesses a satisfactory quality and robustness of unofficial IGS ultra-rapid GPS+GLONASS orbits necessary for multi-GNSS solution. The GOP ultra-fast and real-time ZTD estimation is being developed with in-house software application using own G-Nut library and Precise Point Positioning technique (in contrast to all other GOP ZTD products based on Bernese GPS software and based on double-difference observations). The IGS Real-time Pilot Project orbit and clock corrections are seriously exploited in these ultra-fast and real-time tropospheric products aimed for nowcasting and severe weather monitoring. Our implementation assesses an optimal balance between timelines and product quality required by these applications.

Ultra-fast outflows (aka UFOs) from AGNs and QSOs

NASA Astrophysics Data System (ADS)

Cappi, M.; Tombesi, F.; Giustini, M.

During the last decade, strong observational evidence has been accumulated for the existence of massive, high velocity winds/outflows (aka Ultra Fast Outflows, UFOs) in nearby AGNs and in more distant quasars. Here we briefly review some of the most recent developments in this field and discuss the relevance of UFOs for both understanding the physics of accretion disk winds in AGNs, and for quantifying the global amount of AGN feedback on the surrounding medium.

Optimal thickness of silicon membranes to achieve maximum thermoelectric efficiency: A first principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangold, Claudia; Neogi, Sanghamitra; Max Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz

2016-08-01

Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.

Ultra-low power generation of twin photons in a compact silicon ring resonator.

PubMed

Azzini, Stefano; Grassani, Davide; Strain, Michael J; Sorel, Marc; Helt, L G; Sipe, J E; Liscidini, Marco; Galli, Matteo; Bajoni, Daniele

2012-10-08

We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 μm radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 μW continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.

Design of miniaturized silicon wire and slot waveguide polarization splitterbased on a resonant tunneling.

PubMed

Komatsu, Masa-Aki; Saitoh, Kunimasa; Koshiba, Masanori

2009-10-12

We propose an ultra-small polarization splitter based on a resonant tunneling phenomenon. This polarization splitter consists of two identical horizontally oblong silicon wire waveguides separated by a vertical slot waveguide. The structural parameters of the central resonant slot waveguide are designed to couple only the TM-like mode between the left and right side silicon wire waveguides. Results from numerical simulation with the full-vectorial beam propagation method show that a 16-mum-long polarization splitter with extinction ratio better than -20 dB on the entire C-band is achieved.

Plasma instability in fast spherical discharge induced by a preionization

NASA Astrophysics Data System (ADS)

Antsiferov, P. S.; Dorokhin, L. A.

2015-04-01

As it was shown earlier, fast discharge (dI/dt ˜ 1012 A/s and Imax ≈ 40 kA) in a spherical cavity (Al2O3, inner diameter 11 mm, 4 mm apertures for the current supply) filled with working gas (Ar and Xe, pressure 80 Pa), results in the formation of a plasma with the form close to spherical. The physical mechanism can be the cumulation of a convergent shock wave, which was originated near the inner surface of the discharge cavity. It was also shown for the cylindrical fast discharge that the preionization influences the dynamics of the cylindrical convergent shock wave, its evolutions becomes faster. The present work is devoted to the study of the influence of the preionization on the plasma formation in the fast discharge with spherical geometry (Ar, 80 Pa). The inductive storage with plasma erosion opening switch was used as a current driver. The spatial structure of the discharge plasma was studied by means of a pin-hole camera with the microchannel plate (MCP) detector with time gate of 5 ns. The extreme ultra violet spectra were studied by means of the grazing incidence spectrometer with the same MCP detector with time gate of 20 ns. Beside the expected effects (reduction of the spherical plasma formation time and some increase of the electron temperature), the preionization of the discharge by the current 500 A results also in the development of the plasma instabilities and destruction of the compact plasma ball in several tens of nanoseconds. Possible mechanism of the instability is discussed.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, K.H.

1998-06-30

A method is disclosed for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates. 1 fig.

Method for producing silicon thin-film transistors with enhanced forward current drive

DOEpatents

Weiner, Kurt H.

1998-01-01

A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Mid-IR lasers based on transition metal and rare-earth ion doped crystals

NASA Astrophysics Data System (ADS)

Mirov, S.; Fedorov, V.; Martyshkin, D.; Moskalev, I.; Mirov, M.; Vasilyev, S.

2015-05-01

We report a novel design of CW Cr2+:ZnS/ZnSe laser systems and demonstrate record output powers of 27.5 W at 2.45 μm and 13.9 W at 2.94 μm with slope efficiencies of 63.7% and 37.4%, respectively. Power scaling of ultra-fast Cr2+:ZnS/ZnSe Kerr mode-locked lasers beyond 2 W level, as well as the shortest pulse duration of 29 fs, are also reported. New development of Fe:ZnSe laser with average output power > 35 W at 4.1 μm output wavelength and 100 Hz pulse repetition rate (PRR) was achieved in a nonselective cavity. With intracavity prim selector, wavelength tunability of 3.88-4.17 μm was obtained with maximum average output power of 23 W. We also report new results on Tm-fiber pumped passively and actively Q-switched Ho:YAG laser systems. High peak power actively Q-switched Ho:YAG laser demonstrates stable operation with pulse energy > 50 mJ, 12 ns pulse duration, and 100-1000 Hz PRR which correspondents to more than 4 MW peak power. The actively Q-switched Ho:YAG laser system optimized for high repetition rate delivers 40 W average output power at 10-100 kHz PRR. The Ho:YAG laser with passive Q-switcher demonstrates constant 5 mJ output energy from 200 Hz to 2.23 kHz PRR with optical slope efficiency with respect to Tm-fiber laser of ~43%.

Intermittent metabolic switching, neuroplasticity and brain health

PubMed Central

Mattson, Mark P.; Moehl, Keelin; Ghena, Nathaniel; Schmaedick, Maggie; Cheng, Aiwu

2018-01-01

During evolution, individuals whose brains and bodies functioned well in a fasted state were successful in acquiring food, enabling their survival and reproduction. With fasting and extended exercise, liver glycogen stores are depleted and ketones are produced from adipose-cell-derived fatty acids. This metabolic switch in cellular fuel source is accompanied by cellular and molecular adaptations of neural networks in the brain that enhance their functionality and bolster their resistance to stress, injury and disease. Here, we consider how intermittent metabolic switching, repeating cycles of a metabolic challenge that induces ketosis (fasting and/or exercise) followed by a recovery period (eating, resting and sleeping), may optimize brain function and resilience throughout the lifespan, with a focus on the neuronal circuits involved in cognition and mood. Such metabolic switching impacts multiple signalling pathways that promote neuroplasticity and resistance of the brain to injury and disease. PMID:29321682

Vacuum stability testing of Apollo 15 Scientific Instrument Module (SIM) non-metallic materials and reversion of silicone rubber in a motor switch

NASA Technical Reports Server (NTRS)

Clancy, H. M.

1972-01-01

Vacuum stability screening tests were performed on the Apollo 15 Scientific Instrument Module (SIM) bay nonmetallic materials in accordance with the NASA document SP-R-0022. The testing was necessary to support the evaluation to determine the effect material outgassing contamination would have on the SIM bay optical lenses and sensing devices. The Apollo 15 SIM experiments were highly successful, therefore, it is assumed that contamination due to the outgassing of nonmetallic materials did not affect equipment operation. A related problem, the reversion of a silicone rubber grommet which affected an electrical motor switch operation is also reported.

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

NASA Astrophysics Data System (ADS)

Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Liao, Kuo-Hsiao; Tseng, Bae-Heng; Sze, Simon M.

2012-09-01

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.

Bipolar resistive switching in metal-insulator-semiconductor nanostructures based on silicon nitride and silicon oxide

NASA Astrophysics Data System (ADS)

Koryazhkina, M. N.; Tikhov, S. V.; Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Antonov, I. N.; Karzanov, V. V.; Gorshkov, O. N.; Tetelbaum, D. I.; Karakolis, P.; Dimitrakis, P.

2018-03-01

Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 interlayer (2 nm) is revealed in the changes in the semiconductor space charge region and small-signal parameters of parallel and serial equivalent circuit models measured in the high- and low-resistive capacitor states, as well as under laser illumination. The increase in conductivity of the semiconductor capacitor plate significantly reduces the charging and discharging times of capacitor-like structures.

A flexible, on-line magnetic spectrometer for ultra-intense laser produced fast electron measurement

NASA Astrophysics Data System (ADS)

Ge, Xulei; Yuan, Xiaohui; Yang, Su; Deng, Yanqing; Wei, Wenqing; Fang, Yuan; Gao, Jian; Liu, Feng; Chen, Min; Zhao, Li; Ma, Yanyun; Sheng, Zhengming; Zhang, Jie

2018-04-01

We have developed an on-line magnetic spectrometer to measure energy distributions of fast electrons generated from ultra-intense laser-solid interactions. The spectrometer consists of a sheet of plastic scintillator, a bundle of non-scintillating plastic fibers, and an sCMOS camera recording system. The design advantages include on-line capturing ability, versatility of detection arrangement, and resistance to harsh in-chamber environment. The validity of the instrument was tested experimentally. This spectrometer can be applied to the characterization of fast electron source for understanding fundamental laser-plasma interaction physics and to the optimization of high-repetition-rate laser-driven applications.

Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.

PubMed

Yong, Zheng; Shopov, Stefan; Mikkelsen, Jared C; Mallard, Robert; Mak, Jason C C; Voinigescu, Sorin P; Poon, Joyce K S

2017-03-20

We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 V_pp to enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.

Fast superconducting magnetic field switch

DOEpatents

Goren, Yehuda; Mahale, Narayan K.

1996-01-01

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

Fast superconducting magnetic field switch

DOEpatents

Goren, Y.; Mahale, N.K.

1996-08-06

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

Ultra Low-Voltage Energy Harvesting

DTIC Science & Technology

2013-09-01

Power PV Photovoltaic R Resistance RF Radio Frequencies S Switch SPICE Simulation Program with Integrated Circuit Emphasis T Switching Cycle xiv...control experiment, a supercapacitor was connected to a photovoltaic (PV) source with a diode in between. The advantages of this circuit were a...Circuits to harvest thermal differences typically produce only 0.02 to 0.15 V, while low-power photovoltaic cells can generate 0.2 to 0.7 V and

Using a fast dual-wavelength imaging ellipsometric system to measure the flow thickness profile of an oil thin film

NASA Astrophysics Data System (ADS)

Kuo, Chih-Wei; Han, Chien-Yuan; Jhou, Jhe-Yi; Peng, Zeng-Yi

2017-11-01

Dual-wavelength light sources with stroboscopic illumination technique were applied in a process of photoelastic modulated ellipsometry to retrieve two-dimensional ellipsometric parameters of thin films on a silicon substrate. Two laser diodes were alternately switched on and modulated by a programmable pulse generator to generate four short pulses at specific temporal phase angles in a modulation cycle, and short pulses were used to freeze the intensity variation of the PEM modulated signal that allows ellipsometric images to be captured by a charge-coupled device. Although the phase retardation of a photoelastic modulator is related to the light wavelength, we employed an equivalent phase retardation technique to avoid any setting from the photoelastic modulator. As a result, the ellipsometric parameters of different wavelengths may be rapidly obtained using this dual-wavelength ellipsometric system every 4 s. Both static and dynamic experiments are demonstrated in this work.

Electron-hole pairs generation rate estimation irradiated by isotope Nickel-63 in silicone using GEANT4

NASA Astrophysics Data System (ADS)

Kovalev, I. V.; Sidorov, V. G.; Zelenkov, P. V.; Khoroshko, A. Y.; Lelekov, A. T.

2015-10-01

To optimize parameters of beta-electrical converter of isotope Nickel-63 radiation, model of the distribution of EHP generation rate in semiconductor must be derived. By using Monte-Carlo methods in GEANT4 system with ultra-low energy electron physics models this distribution in silicon calculated and approximated with Gauss function. Maximal efficient isotope layer thickness and maximal energy efficiency of EHP generation were estimated.

Enzyme-immobilized SiO2-Si electrode: Fast interfacial electron transfer with preserved enzymatic activity

NASA Astrophysics Data System (ADS)

Wang, Gang; Yau, Siu-Tung

2005-12-01

The enzyme, glucose oxidase (GOx), is immobilized using electrostatic interaction on the native oxide of heavily doped n-type silicon. Voltammetric measurement shows that the immobilized GOx gives rise to a very fast enzyme-silicon interfacial electron transfer rate constant of 7.9s-1. The measurement also suggests that the enzyme retains its native conformation when immobilized on the silicon surface. The preserved native conformation of GOx is further confirmed by testing the enzymatic activity of the immobilized GOx using glucose. The GOx-immobilized silicon is shown to behave as a glucose sensor that detects glucose with concentrations as low as 50μM.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-04-01

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.

Energy consumption analysis of graphene based all spin logic device with voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Zhang, Zhizhong; Zhang, Yue; Zheng, Zhenyi; Wang, Guanda; Su, Li; Zhang, Youguang; Zhao, Weisheng

2017-05-01

All spin logic device (ASLD) is a promising option to realize the ultra-low power computing systems. However, the low spin transport efficiency and the non-local switching of the detector have become two key challenges of the ASLD. In this paper, we analyze the energy consumption of a graphene based ASLD with the ferromagnetic layer switching assistance by voltage control magnetic anisotropy (VCMA) effect. This structure has significant potential towards ultra-low power consumption: the applied voltage can not only shorten switching time of the ferromagnetic layer, but also decreases the critical injection current; the graphene channel enhances greatly the spin transport efficiency. By applying the approximate circuit model, the impact of material configurations, interfaces and geometry can be synthetically studied. An accurate physic model was also developed, based on which, we carry out the micro-magnetic simulations to analyze the magnetization dynamics. Combining these electrical and magnetic investigations, the energy consumption of the proposed ASLD can be estimated. With the optimizing parameters, the energy consumption can be reduced to 2.5 pJ for a logic operation.

A novel upgrade to Helsinki AMS: Fast switching of isotopes with electrostatic deflectors

NASA Astrophysics Data System (ADS)

Palonen, V.; Tikkanen, P.

2015-10-01

We have developed and installed electrostatic deflectors at the injection magnet entrance and exit to enable fast switching between isotopes in AMS measurements. The fast selection of the injected isotope, stable isotope current measurements, and rare isotope detection are all performed with three synchronized real-time NI-PXI computers. With the improvements, we are able to attain a precision of better than 0.2% for the 14C/13C ratio of modern samples.

Pulsed Power Bibliography. Volume 1. Indices.

DTIC Science & Technology

1983-08-01

REPETITION RATES «e»7 A 100 KV, FAST, HIGH EHEROY. NONUNIFORM FIELD DISTORTION SWITCH MM CROWBARRIHO TECHNIGUE FOR HIGH-VOLTAGE CAPACITOR SAHKS...EMISSION IN THE ELECTRICAL EXPLOSION OF A THIH METAL FOIL • lair , O.T.A. 427) STATISTICAL TIME LAOS IN GAS DISCHARGE GAPS IRRADIATED WITH A...7 A 111 KV. FAST. HIGH ENERGY, NONUNIFORM FIELD DISTORTION SWITCH MM A 3 MA. ill KV FAST CAPACITOR IANK FOR A SHOCK-HEATED TORUS 7217 A LOW

Fast Versus Slow Strategy of Switching Patients With Schizophrenia to Aripiprazole From Other Antipsychotics.

PubMed

Hwang, Tzung-Jeng; Lo, Wei-Ming; Chan, Hung-Yu; Lin, Ching-Feng; Hsieh, Ming H; Liu, Chen-Chun; Liu, Chih-Min; Hwu, Hai-Gwo; Kuo, Ching-Hua; Chen, Wei J

2015-12-01

This study aimed to compare strategies differing in the speed of switching schizophrenic patients to aripiprazole from other antipsychotic agents, with dual administration for 2 weeks and then tapering off the current antipsychotic in fast (within 1 week) versus slow (within 4 weeks) strategies. This 8-week, open-label, randomized, parallel study assigned patients with a primary Diagnostic and Statistical Manual of Mental Disorders, Fourth Edition, diagnosis of schizophrenia or schizoaffective disorder to either the fast-switching (n = 38) or slow-switching (n = 41) group. Efficacy assessments at 5 time points included Positive and Negative Syndrome Scale and Clinical Global Impression scale. Safety assessments included extrapyramidal symptoms, metabolic profile, serum prolactin level, QTc interval, and adverse events. Drug concentrations and cytochrome P450 CYP2D6 and CYP3A4 genotypes were also measured. The fast- and slow-switching groups were comparable in demographical and clinical features at baseline and dropout rate. In the intention-to-treat analysis using mixed-effects models, there were significant within-group decreases over time in the Positive and Negative Syndrome Scale total scores (P = 0.03) and its subscores except for positive subscores, whereas no between-group differences were found. A reduction in body weight (P = 0.01) and lower levels of total cholesterol (P = 0.03), triglycerides (P = 0.03), and prolactin (P = 0.01) were noted in both groups but no increase in extrapyramidal symptoms or prolongation of QTc. The blood concentrations of aripiprazole in all patients were in a therapeutic range at day 56, with CYP2D6*10 polymorphisms being associated with aripiprazole concentrations. In conclusion, there is no significant difference between the fast- and slow-switching strategy in terms of improvements in clinical symptoms and metabolic profile in this 8-week study.

Light-activated resistance switching in SiOx RRAM devices

NASA Astrophysics Data System (ADS)

Mehonic, A.; Gerard, T.; Kenyon, A. J.

2017-12-01

We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

Micro/nano electro mechanical systems for practical applications

NASA Astrophysics Data System (ADS)

Esashi, Masayoshi

2009-09-01

Silicon MEMS as electrostatically levitated rotational gyroscope, 2D optical scanner and wafer level packaged devices as integrated capacitive pressure sensor and MEMS switch are described. MEMS which use non-silicon materials as diamond, PZT, conductive polymer, CNT (carbon nano tube), LTCC with electrical feedthrough, SiC (silicon carbide) and LiNbO3 for multi-probe data storage, multi-column electron beam lithography system, probe card for wafer-level burn-in test, mould for glass press moulding and SAW wireless passive sensor respectively are also described.

Ultra-stripped supernovae: progenitors and fate

NASA Astrophysics Data System (ADS)

Tauris, Thomas M.; Langer, Norbert; Podsiadlowski, Philipp

2015-08-01

The explosion of ultra-stripped stars in close binaries can lead to ejecta masses <0.1 M⊙ and may explain some of the recent discoveries of weak and fast optical transients. In Tauris et al., it was demonstrated that helium star companions to neutron stars (NSs) may experience mass transfer and evolve into naked ˜1.5 M⊙ metal cores, barely above the Chandrasekhar mass limit. Here, we elaborate on this work and present a systematic investigation of the progenitor evolution leading to ultra-stripped supernovae (SNe). In particular, we examine the binary parameter space leading to electron-capture (EC SNe) and iron core-collapse SNe (Fe CCSNe), respectively, and determine the amount of helium ejected with applications to their observational classification as Type Ib or Type Ic. We mainly evolve systems where the SN progenitors are helium star donors of initial mass MHe = 2.5-3.5 M⊙ in tight binaries with orbital periods of Porb = 0.06-2.0 d, and hosting an accreting NS, but we also discuss the evolution of wider systems and of both more massive and lighter - as well as single - helium stars. In some cases, we are able to follow the evolution until the onset of silicon burning, just a few days prior to the SN explosion. We find that ultra-stripped SNe are possible for both EC SNe and Fe CCSNe. EC SNe only occur for MHe = 2.60-2.95 M⊙ depending on Porb. The general outcome, however, is an Fe CCSN above this mass interval and an ONeMg or CO white dwarf for smaller masses. For the exploding stars, the amount of helium ejected is correlated with Porb - the tightest systems even having donors being stripped down to envelopes of less than 0.01 M⊙. We estimate the rise time of ultra-stripped SNe to be in the range 12 h-8 d, and light-curve decay times between 1 and 50 d. A number of fitting formulae for our models are provided with applications to population synthesis. Ultra-stripped SNe may produce NSs in the mass range 1.10-1.80 M⊙ and are highly relevant for LIGO/VIRGO since most (possibly all) merging double NS systems have evolved through this phase. Finally, we discuss the low-velocity kicks which might be imparted on these resulting NSs at birth.

Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.

PubMed

Kwack, Myung-Joon; Tanemura, Takuo; Higo, Akio; Nakano, Yoshiaki

2012-12-17

A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal.

Si:Bi switched photoconducttor infrared detector array

NASA Technical Reports Server (NTRS)

Eakin, C. E.

1983-01-01

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

What predicts performance in ultra-triathlon races? – a comparison between Ironman distance triathlon and ultra-triathlon

PubMed Central

Knechtle, Beat; Zingg, Matthias Alexander; Rosemann, Thomas; Stiefel, Michael; Rüst, Christoph Alexander

2015-01-01

Objective This narrative review summarizes recent intentions to find potential predictor variables for ultra-triathlon race performance (ie, triathlon races longer than the Ironman distance covering 3.8 km swimming, 180 km cycling, and 42.195 km running). Results from studies on ultra-triathletes were compared to results on studies on Ironman triathletes. Methods A literature search was performed in PubMed using the terms “ultra”, “triathlon”, and “performance” for the aspects of “ultra-triathlon”, and “Ironman”, “triathlon”, and “performance” for the aspects of “Ironman triathlon”. All resulting papers were searched for related citations. Results for ultra-triathlons were compared to results for Ironman-distance triathlons to find potential differences. Results Athletes competing in Ironman and ultra-triathlon differed in anthropometric and training characteristics, where both Ironmen and ultra-triathletes profited from low body fat, but ultra-triathletes relied more on training volume, whereas speed during training was related to Ironman race time. The most important predictive variables for a fast race time in an ultra-triathlon from Double Iron (ie, 7.6 km swimming, 360 km cycling, and 84.4 km running) and longer were male sex, low body fat, age of 35–40 years, extensive previous experience, a fast time in cycling and running but not in swimming, and origins in Central Europe. Conclusion Any athlete intending to compete in an ultra-triathlon should be aware that low body fat and high training volumes are highly predictive for overall race time. Little is known about the physiological characteristics of these athletes and about female ultra-triathletes. Future studies need to investigate anthropometric and training characteristics of female ultra-triathletes and what motivates women to compete in these races. Future studies need to correlate physiological characteristics such as maximum oxygen uptake (VO2max) with ultra-triathlon race performance in order to investigate whether these characteristics are also predictive for ultra-triathlon race performance. PMID:26056498

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

A fully integrated, wide-load-range, high-power-conversion-efficiency switched capacitor DC-DC converter with adaptive bias comparator for ultra-low-power power management integrated circuit

NASA Astrophysics Data System (ADS)

Asano, Hiroki; Hirose, Tetsuya; Kojima, Yuta; Kuroki, Nobutaka; Numa, Masahiro

2018-04-01

In this paper, we present a wide-load-range switched-capacitor DC-DC buck converter with an adaptive bias comparator for ultra-low-power power management integrated circuit. The proposed converter is based on a conventional one and modified to operate in a wide load range by developing a load current monitor used in an adaptive bias comparator. Measurement results demonstrated that our proposed converter generates a 1.0 V output voltage from a 3.0 V input voltage at a load of up to 100 µA, which is 20 times higher than that of the conventional one. The power conversion efficiency was higher than 60% in the load range from 0.8 to 100 µA.

Solar Cells for Lunar Application

NASA Technical Reports Server (NTRS)

Freundlich, Alex; Ignatiev, Alex

1997-01-01

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Broadband Terahertz Computed Tomography Using a 5k-pixel Real-time THz Camera

NASA Astrophysics Data System (ADS)

Trichopoulos, Georgios C.; Sertel, Kubilay

2015-07-01

We present a novel THz computed tomography system that enables fast 3-dimensional imaging and spectroscopy in the 0.6-1.2 THz band. The system is based on a new real-time broadband THz camera that enables rapid acquisition of multiple cross-sectional images required in computed tomography. Tomographic reconstruction is achieved using digital images from the densely-packed large-format (80×64) focal plane array sensor located behind a hyper-hemispherical silicon lens. Each pixel of the sensor array consists of an 85 μm × 92 μm lithographically fabricated wideband dual-slot antenna, monolithically integrated with an ultra-fast diode tuned to operate in the 0.6-1.2 THz regime. Concurrently, optimum impedance matching was implemented for maximum pixel sensitivity, enabling 5 frames-per-second image acquisition speed. As such, the THz computed tomography system generates diffraction-limited resolution cross-section images as well as the three-dimensional models of various opaque and partially transparent objects. As an example, an over-the-counter vitamin supplement pill is imaged and its material composition is reconstructed. The new THz camera enables, for the first time, a practical application of THz computed tomography for non-destructive evaluation and biomedical imaging.

Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

PubMed

Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

2017-04-03

We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

Using liquid and solid state NMR and photoluminescence to study the synthesis and solubility properties of amine capped silicon nanoparticles.

PubMed

Giuliani, J R; Harley, S J; Carter, R S; Power, P P; Augustine, M P

2007-08-01

Water soluble silicon nanoparticles were prepared by the reaction of bromine terminated silicon nanoparticles with 3-(dimethylamino)propyl lithium and characterized with liquid and solid state nuclear magnetic resonance (NMR) and photoluminescence (PL) spectroscopies. The surface site dependent 29Si chemical shifts and the nuclear spin relaxation rates from an assortment of 1H-29Si heteronuclear solid state NMR experiments for the amine coated reaction product are consistent with both the 1H and 13C liquid state NMR results and routine transmission electron microscopy, ultra-violet/visible, and Fourier transform infrared measurements. PL was used to demonstrate the pH dependent solubility properties of the amine passivated silicon nanoparticles.

RF-MEMS capacitive switches with high reliability

DOEpatents

Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

2013-09-03

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Review of silicon photonics: history and recent advances

NASA Astrophysics Data System (ADS)

Ye, Winnie N.; Xiong, Yule

2013-09-01

Silicon photonics has attracted tremendous attention and research effort as a promising technology in optoelectronic integration for computing, communications, sensing, and solar harvesting. Mainly due to the combination of its excellent material properties and the complementary metal-oxide semiconductor (CMOS) fabrication processing technology, silicon has becoming the material choice for photonic and optoelectronic circuits with low cost, ultra-compact device footprint, and high-density integration. This review paper provides an overview on silicon photonics, by highlighting the early work from the mid-1980s on the fundamental building blocks such as silicon platforms and waveguides, and the main milestones that have been achieved so far in the field. A summary of reported work on functional elements in both passive and active devices, as well as the applications of the technology in interconnect, sensing, and solar cells, is identified.

Laser-induced phase separation of silicon carbide

PubMed Central

Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

2016-01-01

Understanding the phase separation mechanism of solid-state binary compounds induced by laser–material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (∼2.5 nm) and polycrystalline silicon (∼5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system. PMID:27901015

Ultra-Thin Monocrystalline Silicon Solar Cell with 12.2% Efficiency Using Silicon-On-Insulator Substrate.

PubMed

Bian, Jian-Tao; Yu, Jian; Duan, Wei-Yuan; Qiu, Yu

2015-04-01

Single side heterojunction silicon solar cells were designed and fabricated using Silicon-On-Insulator (SOI) substrate. The TCAD software was used to simulate the effect of silicon layer thickness, doping concentration and the series resistance. A 10.5 µm thick monocrystalline silicon layer was epitaxially grown on the SOI with boron doping concentration of 2 x 10(16) cm(-3) by thermal CVD. Very high Voc of 678 mV was achieved by applying amorphous silicon heterojunction emitter on the front surface. The single cell efficiency of 12.2% was achieved without any light trapping structures. The rear surface recombination and the series resistance are the main limiting factors for the cell efficiency in addition to the c-Si thickness. By integrating an efficient light trapping scheme and further optimizing fabrication process, higher efficiency of 14.0% is expected for this type of cells. It can be applied to integrated circuits on a monolithic chip to meet the requirements of energy autonomous systems.

Photonic chirped radio-frequency generator with ultra-fast sweeping rate and ultra-wide sweeping range.

PubMed

Wun, Jhih-Min; Wei, Chia-Chien; Chen, Jyehong; Goh, Chee Seong; Set, S Y; Shi, Jin-Wei

2013-05-06

A high-performance photonic sweeping-frequency (chirped) radio-frequency (RF) generator has been demonstrated. By use of a novel wavelength sweeping distributed-feedback (DFB) laser, which is operated based on the linewidth enhancement effect, a fixed wavelength narrow-linewidth DFB laser, and a wideband (dc to 50 GHz) photodiode module for the hetero-dyne beating RF signal generation, a very clear chirped RF waveform can be captured by a fast real-time scope. A very-high frequency sweeping rate (10.3 GHz/μs) with an ultra-wide RF frequency sweeping range (~40 GHz) have been demonstrated. The high-repeatability (~97%) in sweeping frequency has been verified by analyzing tens of repetitive chirped waveforms.

Manufacture of radio frequency micromachined switches with annealing.

PubMed

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of Radio Frequency Micromachined Switches with Annealing

PubMed Central

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. PMID:24445415

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

The TT-PET project: a thin TOF-PET scanner based on fast novel silicon pixel detectors

NASA Astrophysics Data System (ADS)

Bandi, Y.; Benoit, M.; Cadoux, F. R.; Forshaw, D. C.; Hänni, R.; Hayakawa, D.; Iacobucci, G.; Michal, S.; Miucci, A.; Paolozzi, L.; Ratib, O.; Ripiccini, E.; Tognina, C.; Valerio, P.; Weber, M.

2018-01-01

The TT-PET project aims at developing a compact Time-of-flight PET scanner with 30ps time resolution, capable of withstanding high magnetic fields and allowing for integration in a traditional MRI scanner, providing complimentary real-time PET images. The very high timing resolution of the TT-PET scanner is achieved thanks to a new generation of Silicon-Germanium (Si-Ge) amplifiers, which are embedded in monolithic pixel sensors. The scanner is composed of 16 detection towers as well as cooling blocks, arranged in a ring structure. The towers are composed of multiple ultra-thin pixel modules stacked on top of each other. Making it possible to perform depth of interaction measurements and maximize the spatial resolution along the line of flight of the two photons emitted within a patient. This will result in improved image quality, contrast, and uniformity while drastically reducing backgrounds within the scanner. Allowing for a reduction in the amount of radioactivity delivered to the patient. Due to an expected data rate of about 250 MB/s a custom readout system for high data throughput has been developed, which includes noise filtering and reduced data pressure. The realisation of a first scanner prototype for small animals is foreseen by 2019. A general overview of the scanner will be given including, technical details concerning the detection elements, mechanics, DAQ readout, simulation and results.

Electric energy production from food waste: Microbial fuel cells versus anaerobic digestion.

PubMed

Xin, Xiaodong; Ma, Yingqun; Liu, Yu

2018-05-01

A food waste resourceful process was developed by integrating the ultra-fast hydrolysis and microbial fuel cells (MFCs) for energy and resource recovery. Food waste was first ultra-fast hydrolyzed by fungal mash rich in hydrolytic enzymes in-situ produced from food waste. After which, the separated solids were readily converted to biofertilizer, while the liquid was fed to MFCs for direct electricity generation with a conversion efficiency of 0.245 kWh/kg food waste. It was estimated that about 192.5 million kWh of electricity could be produced from the food waste annually generated in Singapore, together with 74,390 tonnes of dry biofertilizer. Compared to anaerobic digestion, the proposed approach was more environmentally friendly and economically viable in terms of both electricity conversion and process cost. It is expected that this study may lead to the paradigm shift in food waste management towards ultra-fast concurrent recovery of resource and electricity with zero-solid discharge. Copyright © 2018 Elsevier Ltd. All rights reserved.

Microchip capillary gel electrophoresis using programmed field strength gradients for the ultra-fast analysis of genetically modified organisms in soybeans.

PubMed

Kim, Yun-Jeong; Chae, Joon-Seok; Chang, Jun Keun; Kang, Seong Ho

2005-08-12

We have developed a novel method for the ultra-fast analysis of genetically modified organisms (GMOs) in soybeans by microchip capillary gel electrophoresis (MCGE) using programmed field strength gradients (PFSG) in a conventional glass double-T microchip. Under the programmed electric field strength and 0.3% poly(ethylene oxide) sieving matrix, the GMO in soybeans was analyzed within only 11 s of the microchip. The MCGE-PFSG method was a program that changes the electric field strength during GMO analysis, and was also applied to the ultra-fast analysis of PCR products. Compared to MCGE using a conventional and constantly applied electric field, the MCGE-PFSG analysis generated faster results without the loss of resolving power and reproducibility for specific DNA fragments (100- and 250-bp DNA) of GM-soybeans. The MCGE-PFSG technique may prove to be a new tool in the GMO analysis due to its speed, simplicity, and high efficiency.

Organic photovoltaics: elucidating the ultra-fast exciton dissociation mechanism in disordered materials.

PubMed

Heitzer, Henry M; Savoie, Brett M; Marks, Tobin J; Ratner, Mark A

2014-07-14

Organic photovoltaics (OPVs) offer the opportunity for cheap, lightweight and mass-producible devices. However, an incomplete understanding of the charge generation process, in particular the timescale of dynamics and role of exciton diffusion, has slowed further progress in the field. We report a new Kinetic Monte Carlo model for the exciton dissociation mechanism in OPVs that addresses the origin of ultra-fast (<1 ps) dissociation by incorporating exciton delocalization. The model reproduces experimental results, such as the diminished rapid dissociation with increasing domain size, and also lends insight into the interplay between mixed domains, domain geometry, and exciton delocalization. Additionally, the model addresses the recent dispute on the origin of ultra-fast exciton dissociation by comparing the effects of exciton delocalization and impure domains on the photo-dynamics.This model provides insight into exciton dynamics that can advance our understanding of OPV structure-function relationships. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wideband nonlinear spectral broadening in ultra-short ultra - silicon rich nitride waveguides

PubMed Central

Choi, Ju Won; Chen, George F. R.; Ng, D. K. T.; Ooi, Kelvin J. A.; Tan, Dawn T. H.

2016-01-01

CMOS-compatible nonlinear optics platforms with high Kerr nonlinearity facilitate the generation of broadband spectra based on self-phase modulation. Our ultra – silicon rich nitride (USRN) platform is designed to have a large nonlinear refractive index and low nonlinear losses at 1.55 μm for the facilitation of wideband spectral broadening. We investigate the ultrafast spectral characteristics of USRN waveguides with 1-mm-length, which have high nonlinear parameters (γ ∼ 550 W−1/m) and anomalous dispersion at 1.55 μm wavelength of input light. USRN add-drop ring resonators broaden output spectra by a factor of 2 compared with the bandwidth of input fs laser with the highest quality factors of 11000 and 15000. Two – fold self phase modulation induced spectral broadening is observed using waveguides only 430 μm in length, whereas a quadrupling of the output bandwidth is observed with USRN waveguides with a 1-mm-length. A broadening factor of around 3 per 1 mm length is achieved in the USRN waveguides, a value which is comparatively larger than many other CMOS-compatible platforms. PMID:27272558

A programmable Si-photonic node for SDN-enabled Bloom filter forwarding in disaggregated data centers

NASA Astrophysics Data System (ADS)

Moralis-Pegios, M.; Terzenidis, N.; Vagionas, C.; Pitris, S.; Chatzianagnostou, E.; Brimont, A.; Zanzi, A.; Sanchis, P.; Marti, J.; Kraft, J.; Rochracher, K.; Dorrestein, S.; Bogdan, M.; Tekin, T.; Syrivelis, D.; Tassiulas, L.; Miliou, A.; Pleros, N.; Vyrsokinos, K.

2017-02-01

Programmable switching nodes supporting Software-Defined Networking (SDN) over optical interconnecting technologies arise as a key enabling technology for future disaggregated Data Center (DC) environments. The SDNenabling roadmap of intra-DC optical solutions is already a reality for rack-to-rack interconnects, with recent research reporting on interesting applications of programmable silicon photonic switching fabrics addressing board-to-board and even on-board applications. In this perspective, simplified information addressing schemes like Bloom filter (BF)-based labels emerge as a highly promising solution for ensuring rapid switch reconfiguration, following quickly the changes enforced in network size, network topology or even in content location. The benefits of BF-based forwarding have been so far successfully demonstrated in the Information-Centric Network (ICN) paradigm, while theoretical studies have also revealed the energy consumption and speed advantages when applied in DCs. In this paper we present for the first time a programmable 4x4 Silicon Photonic switch that supports SDN through the use of BF-labeled router ports. Our scheme significantly simplifies packet forwarding as it negates the need for large forwarding tables, allowing for its remote control through modifications in the assigned BF labels. We demonstrate 1x4 switch operation controlling the Si-Pho switch by a Stratix V FPGA module, which is responsible for processing the packet ID and correlating its destination with the appropriate BF-labeled outgoing port. DAC- and amplifier-less control of the carrier-injection Si-Pho switches is demonstrated, revealing successful switching of 10Gb/s data packets with BF-based forwarding information changes taking place at a time-scale that equals the duration of four consecutive packets.

The total switch time of silicon bipolar transistors with base doping gradients or with germanium gradients in the base

NASA Astrophysics Data System (ADS)

Karlsteen, M.; Willander, M.

1993-11-01

In this paper the total switch time for a transistor in a Direct Coupled Transistor Logic (DCTL) circuit is simulated by using Laplace transformations of the Ebers-Moll equations. The influence of doping gradients and germanium gradients in the base is investigated and their relative importance and their limitations are established. In a well designed bipolar transistor only a minor enhancement of the total switch time is obtained with the use of a doping gradient in the base. However, for bipolar transistors with base thickness over 500 Å, an improperly selected doping profile could be devastating for the total switch time. For a bipolar transistor the improvement of the total switch time due to a linear germanium gradient in the base could be up to about 30% compared with an ordinary silicon bipolar transistor. Still, a too high germanium gradient forces the normal transistor current gain (α N) to grow and the total switch time is thereby increased. Further enhancement could be achieved by the use of a second degree polynomial germanium profile in the base. Also in this case, care must be taken not to enlarge the germanium gradient too much as the total switch time then starts to increase. In all cases the betterment of the base transit time that is introduced by the electric field will not be directly used to reduce the base transit time. Instead the improvement is mostly used to lower the emitter transition charging time. However, the most important parameter to control is the normal transistor current gain (α N) that has to be kept within a narrow range to keep the total switch time low.

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

NASA Astrophysics Data System (ADS)

Ayala, Christopher L.; Grogg, Daniel; Bazigos, Antonios; Bleiker, Simon J.; Fernandez-Bolaños, Montserrat; Niklaus, Frank; Hagleitner, Christoph

2015-11-01

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring oscillator built using cell-level digital logic elements based on curved NEM switches. The ring oscillator core occupies an area of 30 μm × 10 μm using 6 NEM switches. Each NEM switch device has a footprint of 5 μm × 3 μm, an air gap of 60 μm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz, and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator are key milestones on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.

Reconfigurable visible nanophotonic switch for optogenetic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Mohanty, Aseema; Li, Qian; Tadayon, Mohammad Amin; Bhatt, Gaurang R.; Cardenas, Jaime; Miller, Steven A.; Kepecs, Adam; Lipson, Michal

2017-02-01

High spatiotemporal resolution deep-brain optical excitation for optogenetics would enable activation of specific neural populations and in-depth study of neural circuits. Conventionally, a single fiber is used to flood light into a large area of the brain with limited resolution. The scalability of silicon photonics could enable neural excitation over large areas with single-cell resolution similar to electrical probes. However, active control of these optical circuits has yet to be demonstrated for optogenetics. Here we demonstrate the first active integrated optical switch for neural excitation at 473 nm, enabling control of multiple beams for deep-brain neural stimulation. Using a silicon nitride waveguide platform, we develop a cascaded Mach-Zehnder interferometer (MZI) network located outside the brain to direct light to 8 different grating emitters located at the tip of the neural probe. We use integrated platinum microheaters to induce a local thermo-optic phase shift in the MZI to control the switch output. We measure an ON/OFF extinction ratio of >8dB for a single switch and a switching speed of 20 microseconds. We characterize the optical output of the switch by imaging its excitation of fluorescent dye. Finally, we demonstrate in vivo single-neuron optical activation from different grating emitters using a fully packaged device inserted into a mouse brain. Directly activated neurons showed robust spike firing activities with low first-spike latency and small jitter. Active switching on a nanophotonic platform is necessary for eventually controlling highly-multiplexed reconfigurable optical circuits, enabling high-resolution optical stimulation in deep-brain regions.

Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

NASA Astrophysics Data System (ADS)

Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

2018-04-01

In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

A low-power high-speed ultra-wideband pulse radio transmission system.

PubMed

Wei Tang; Culurciello, E

2009-10-01

We present a low-power high-speed ultra-wideband (UWB) transmitter with a wireless transmission test platform. The system is specifically designed for low-power high-speed wireless implantable biosensors. The integrated transmitter consists of a compact pulse generator and a modulator. The circuit is fabricated in the 0.5-mum silicon-on-sapphire process and occupies 420 mum times 420 mum silicon area. The transmitter is capable of generating pulses with 1-ns width and the pulse rate can be controlled between 90 MHz and 270 MHz. We built a demonstration/testing system for the transmitter. The transmitter achieves a 14-Mb/s data rate. With 50% duty cycle data, the power consumption of the chip is between 10 mW and 21 mW when the transmission distance is from 3.2 to 4 m. The core circuit size is 70 mum times 130 mum.

An enhanced lumped element electrical model of a double barrier memristive device

NASA Astrophysics Data System (ADS)

Solan, Enver; Dirkmann, Sven; Hansen, Mirko; Schroeder, Dietmar; Kohlstedt, Hermann; Ziegler, Martin; Mussenbrock, Thomas; Ochs, Karlheinz

2017-05-01

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems—nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

PubMed

DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

2011-12-05

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

The analysis of a state-switched absorber design concept

NASA Astrophysics Data System (ADS)

Albanese, Anne-Marie; Cunefare, Kenneth

2002-11-01

A tuned vibration absorber (TVA) is a spring-damper-mass system used in many industries for the suppression of a specific vibration frequency, and has application for the suppression of aircraft fuselage vibration. A state-switched absorber (SSA) is similar to a TVA, except that one or more components in the SSA is able to instantaneously and discretely change properties, thus increasing the effective bandwidth of vibration suppression. In order to design a replacement SSA for the classic TVA, the SSA must operate in the appropriate frequency range, be lightweight, and compact. An optimal SSA will also have a maximal frequency range between which it can switch. This paper discusses the development of a magnetorheological (MR) silicone gel used as the SSA switching element, the shape required to maintain a magnetic flux path, and the contribution of the magnet-mass to frequency shifting. The MR gel is iron-doped silicone, cured in the presence of a magnetic field. During operation, the applied magnetic flux is modified to change the natural frequency. The applied flux requirement forces the SSA to be a small ring. The SSA is designed to operate below 100 Hz.

Silicon microring resonators

NASA Astrophysics Data System (ADS)

Tan, Ying; Dai, Daoxin

2018-05-01

Silicon microring resonators (MRRs) are very popular for many applications because of the advantages of footprint compactness, easy scalability, and functional versatility. Ultra-compact silicon MRRs with box-like spectral responses are realized with a very large free-spectral range (FSR) by introducing bent directional couplers. The measured box-like spectral response has an FSR of >30 nm. The permanent wavelength-alignment techniques for MRRs are also presented, including the laser-induced local-oxidation technique as well as the local-etching technique. With these techniques, one can control finely the permanent wavelength shift, which is also large enough to compensate the random wavelength variation due to the random fabrication errors.

The ideal chip is not enough: Issues retarding the success of wide band-gap devices

NASA Astrophysics Data System (ADS)

Kaminski, Nando

2017-04-01

Semiconductor chips made from the wide band-gap (WBG) materials silicon carbide (SiC) or gallium nitride (GaN) are already approaching the theoretical limits given by the respective materials. Unfortunately, their advantages over silicon devices cannot be fully exploited due to limitations imposed by the device packaging or the circuitry around the semiconductors. Stray inductances slow down the switching speed and increase losses, packaging materials limit the maximum temperature and the maximum useful temperature swing, and passives limit the maximum switching frequency. All these issues have to be solved or at least minimised to make WBG attractive for a wider range of applications and, consequently, to profit from the economy of scale.