A versatile UHV transport and measurement chamber for neutron reflectometry under UHV conditions

NASA Astrophysics Data System (ADS)

Syed Mohd, A.; Pütter, S.; Mattauch, S.; Koutsioubas, A.; Schneider, H.; Weber, A.; Brückel, T.

2016-12-01

We report on a versatile mini ultra-high vacuum (UHV) chamber which is designed to be used on the MAgnetic Reflectometer with high Incident Angle of the Jülich Centre for Neutron Science at Heinz Maier-Leibnitz Zentrum in Garching, Germany. Samples are prepared in the adjacent thin film laboratory by molecular beam epitaxy and moved into the compact chamber for transfer without exposure to ambient air. The chamber is based on DN 40 CF flanges and equipped with sapphire view ports, a small getter pump, and a wobble stick, which serves also as sample holder. Here, we present polarized neutron reflectivity measurements which have been performed on Co thin films at room temperature in UHV and in ambient air in a magnetic field of 200 mT and in the Q-range of 0.18 Å-1. The results confirm that the Co film is not contaminated during the polarized neutron reflectivity measurement. Herewith it is demonstrated that the mini UHV transport chamber also works as a measurement chamber which opens new possibilities for polarized neutron measurements under UHV conditions.

A versatile UHV transport and measurement chamber for neutron reflectometry under UHV conditions.

PubMed

Syed Mohd, A; Pütter, S; Mattauch, S; Koutsioubas, A; Schneider, H; Weber, A; Brückel, T

2016-12-01

We report on a versatile mini ultra-high vacuum (UHV) chamber which is designed to be used on the MAgnetic Reflectometer with high Incident Angle of the Jülich Centre for Neutron Science at Heinz Maier-Leibnitz Zentrum in Garching, Germany. Samples are prepared in the adjacent thin film laboratory by molecular beam epitaxy and moved into the compact chamber for transfer without exposure to ambient air. The chamber is based on DN 40 CF flanges and equipped with sapphire view ports, a small getter pump, and a wobble stick, which serves also as sample holder. Here, we present polarized neutron reflectivity measurements which have been performed on Co thin films at room temperature in UHV and in ambient air in a magnetic field of 200 mT and in the Q-range of 0.18 Å -1 . The results confirm that the Co film is not contaminated during the polarized neutron reflectivity measurement. Herewith it is demonstrated that the mini UHV transport chamber also works as a measurement chamber which opens new possibilities for polarized neutron measurements under UHV conditions.

Alumina-supported sub-nanometer Pt 10 clusters: Amorphization and role of the support material in a highly active CO oxidation catalyst

DOE PAGES

Yin, Chunrong; Negreiros, Fabio R.; Barcaro, Giovanni; ...

2017-02-03

Catalytic CO oxidation is unveiled on size-selected Pt 10 clusters deposited on two very different ultrathin (≈0.5–0.7 nm thick) alumina films: (i) a highly ordered alumina obtained under ultra-high vacuum (UHV) by oxidation of the NiAl(110) surface and (ii) amorphous alumina obtained by atomic layer deposition (ALD) on a silicon chip that is a close model of real-world supports. Notably, when exposed to realistic reaction conditions, the Pt 10/UHV-alumina system undergoes a morphological transition in both the clusters and the substrate, and becomes closely akin to Pt 10/ALD-alumina, thus reconciling UHV-type surface-science and real-world experiments. The Pt 10 clusters, thoroughlymore » characterized via combined experimental techniques and theoretical analysis, exhibit among the highest CO oxidation activity per Pt atom reported for CO oxidation catalysts, due to the interplay of ultra-small size and support effects. Lastly, a coherent interdisciplinary picture then emerges for this catalytic system.« less

A Systematic Multi-Time Scale Solution for Regional Power Grid Operation

NASA Astrophysics Data System (ADS)

Zhu, W. J.; Liu, Z. G.; Cheng, T.; Hu, B. Q.; Liu, X. Z.; Zhou, Y. F.

2017-10-01

Many aspects need to be taken into consideration in a regional grid while making schedule plans. In this paper, a systematic multi-time scale solution for regional power grid operation considering large scale renewable energy integration and Ultra High Voltage (UHV) power transmission is proposed. In the time scale aspect, we discuss the problem from month, week, day-ahead, within-day to day-behind, and the system also contains multiple generator types including thermal units, hydro-plants, wind turbines and pumped storage stations. The 9 subsystems of the scheduling system are described, and their functions and relationships are elaborated. The proposed system has been constructed in a provincial power grid in Central China, and the operation results further verified the effectiveness of the system.

Advanced Photonic Sensors Enabled by Semiconductor Bonding

DTIC Science & Technology

2010-05-31

a dry scroll backing pump to maintain the high differential pressure between the UV gun and the sample/analysis chamber. We also replaced the...semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such...year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system

Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation.

PubMed

Schroeder, J L; Thomson, W; Howard, B; Schell, N; Näslund, L-Å; Rogström, L; Johansson-Jõesaar, M P; Ghafoor, N; Odén, M; Nothnagel, E; Shepard, A; Greer, J; Birch, J

2015-09-01

We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (>50 keV), high photon flux (>10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (<1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation processes. The high-energy synchrotron-radiation based x-rays result in small scattering angles (<11°), allowing large areas of reciprocal space to be imaged with a 2D detector. The system has been designed for use on the 1-tonne, ultra-high load, high-resolution hexapod at the P07 High Energy Materials Science beamline at PETRA III at the Deutsches Elektronen-Synchrotron in Hamburg, Germany. The deposition system includes standard features of a typical UHV deposition system plus a range of special features suited for synchrotron radiation studies and industry-relevant processes. We openly encourage the materials research community to contact us for collaborative opportunities using this unique and versatile scientific instrument.

Molecular electronics--resonant transport through single molecules.

PubMed

Lörtscher, Emanuel; Riel, Heike

2010-01-01

The mechanically controllable break-junction technique (MCBJ) enables us to investigate charge transport through an individually contacted and addressed molecule in ultra-high vacuum (UHV) environment at variable temperature ranging from room temperature down to 4 K. Using a statistical measurement and analysis approach, we acquire current-voltage (I-V) characteristics during the repeated formation, manipulation, and breaking of a molecular junction. At low temperatures, voltages accessing the first molecular orbitals in resonance can be applied, providing spectroscopic information about the junction's energy landscape, in particular about the molecular level alignment in respect to the Fermi energy of the electrodes. Thereby, we can investigate the non-linear transport properties of various types of functional molecules and explore their potential use as functional building blocks for future nano-electronics. An example will be given by the reversible and controllable switching between two distinct conductive states of a single molecule. As a proof-of-principle for functional molecular devices, a single-molecule memory element will be demonstrated.

Harmonic voltage excess problem test and analysis in UHV and EHV grid particular operation mode

NASA Astrophysics Data System (ADS)

Lv, Zhenhua; Shi, Mingming; Fei, Juntao

2018-02-01

The test and analysis of the power quality of some 1000kV UHV transmission lines and 500kV EHV transmission lines is carried out. It is found that there is harmonic voltage excess problems when the power supply of the UHV and EHV voltage line is single-ended or single-loop, the problem basically disappeared after the operation mode change, different operating conditions, the harmonic current has not been greatly affected, indicating that the harmonic voltage changes mainly caused by the system harmonic impedance. With the analysis of MATLAB Simulink system model, it can be seen that there are specific harmonic voltage excess in the system under the specific operating mode, which results in serious distortion of the specific harmonic voltage. Since such phenomena are found in 500kV and 1000kV systems, it is suggested that the test evaluation work should be done under the typical mode of operation in 500kV, 1000kV Planning and construction process to prevent the occurrence of serious distortion and the regional harmonic current monitoring and suppression work should be done.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makarov, Yuri V.; Du, Pengwei; Etingov, Pavel V.

The document titled “WECC Variable Generation Planning Reference Book”. This book is divided into two volumes; one is the main document (volume 1)and the other is appendices (volume 2). The main document is a collection of the best practices and the information regarding the application and impact of variables generation on power system planning. This volume (appendices) has additional information on the following topics: Probabilistic load flow problems. 2. Additional useful indices. 3. high-impact low-frequency (HILF) events. 4. Examples of wide-area nomograms. 5. Transmission line ratings, types of dynamic rating methods. 6. Relative costs per MW-km of different electric powermore » transmission technologies. 7. Ultra-high voltage (UHV) transmission. 8.High voltage direct current (VSC-HVDC). 9. HVDC. 10. Rewiring of existing transmission lines. 11. High-temperature low sag (HTLS) conductors. 12. The direct method and energy functions for transient stability analysis in power systems. 13.Blackouts caused by voltage instability. 14. Algorithm for parameter continuation predictor-corrector methods. 15. Approximation techniques available for security regions. 16. Impacts of wind power on power system small signals stability. 17. FIDVR. 18. FACTS. 19. European planning standard and practices. 20. International experience in wind and solar energy sources. 21. Western Renewable Energy Zones (WREZ). 22. various energy storage technologies. 23. demand response. 24. BA consolidation and cooperation options. 25. generator power management requirements and 26. European planning guidelines.« less

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

The research of full automatic oil filtering control technology of high voltage insulating oil

NASA Astrophysics Data System (ADS)

Gong, Gangjun; Zhang, Tong; Yan, Guozeng; Zhang, Han; Chen, Zhimin; Su, Chang

2017-09-01

In this paper, the design scheme of automatic oil filter control system for transformer oil in UHV substation is summarized. The scheme specifically includes the typical double tank filter connection control method of the transformer oil of the UHV substation, which distinguishes the single port and the double port connection structure of the oil tank. Finally, the design scheme of the temperature sensor and respirator is given in detail, and the detailed evaluation and application scenarios are given for reference.

UHV LT-STM system with Sample and Tip Exchange

NASA Astrophysics Data System (ADS)

Dreyer, Michael; Lee, Jonghee; Wang, Hui; Sullivan, Dan; Barker, Barry

2006-03-01

We developed and built a low temperature scanning tunneling microscope system with ultra high vacuum sample and tip preparation capabilities. The STM is mounted inside an UHV can which is submerged in a He bath cryostat. The cryostat is equipped with two superconducting magnets allowing a maximum in plane field of 2 T and a maximum out of plane field of 9 T. The two fields can be combined to a 1 T vector field. The vacuum can is connected to an UHV system at room temperature consisting of two chambers: One dedicated to transferring samples and tips to the STM, and the other chamber used for tip/sample preparation. It is equipped with two electron beam evaporators, an argon ion sputter gun as well as sample heaters. The whole system is supported by an optical table to decouple the STM from building vibrations. The system was successfully used to study standing electron waves on gold (111) as well as vortices on NbSe2. Details of the microscope, sample and tip handling system, as well as the UHV system will be presented.

The development of a portable ultrahigh vacuum chamber via silicon block.

PubMed

Chuang, Ho-Chiao; Huang, Chia-Shiuan

2014-05-01

This paper describes a nonmetallic, light weight portable chamber for ultra-high vacuum (UHV) applications. The chamber consists of a processed silicon block anodically bonding five polished Pyrex glass windows and a Pyrex glass adapter, without using any screws, bolts or vacuum adhesives. The design features provide an alternative chamber for UHV applications which require nonmetallic components. We have cyclically baked the chamber up to 180 °C for 160 h and have achieved an ultimate pressure of 1.4 × 10(-9) Torr (limited by our pumping station), with no leak detected. Both Pyrex glass windows and Pyrex glass adapter have been used successfully.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jungdae; Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749; Nam, Hyoungdo

2015-09-15

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper andmore » stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.« less

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability.

PubMed

Kim, Jungdae; Nam, Hyoungdo; Qin, Shengyong; Kim, Sang-ui; Schroeder, Allan; Eom, Daejin; Shih, Chih-Kang

2015-09-01

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper and stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.

Electrical Measurements and Nanomechanics Using Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Chang, Yong

2002-10-01

In the early 1980s, G. Binnig et al. invented the Scanning Tunneling Microscopy (STM) [1], making it possible to obtain atomic resolution images of conducting surfaces. After that, many different types of Scanning Probe Microscopy (SPM) were invented and some of the most useful representatives are Atomic Force Microscopy (AFM) [2], Electrostatic Force Microscopy (EFM) [3] and Kelvin Probe Force Microscopy (KPFM) [4,5]. In 1985, G. Binnig et al. [2] invented the AFM, which now is used as a fundamental tool in many fields of research. Developed from AFM, Y. Martin et al. [3] invented EFM in 1987. The development of AC mode AFM allows the detection of weak long-range forces. EFM has also been used to study other systems and phenomena, such as thin liquid films on solid surfaces [6], electrically stressed gold nanowires [7], and spatial charge distribution in quantum wires [8]. In 1991, M. Nonnenmacher et al. [5] invented Kelvin Probe Force Microscopy. KPFM is used to study any property that affects the tip-surface Contact Potential Difference (CPD), such as voltage signals in integrated circuits (IC) [9], charged grain boundaries in polycrystalline silicon [10] and surface potential variations in multilayer semiconductor devices [11]. The aim of this poster is to discuss the application of SPM to electrical measurements. The theory of SPM was presented. The AFM was firstly introduced as it was developed before the other two. The design and theory were discussed. The force-distance curve was introduced. After this EFM was presented. EFM was developed from AC mode AFM. The technique was achieved by applying a DC voltage between the tip and the sample. The design, theory and features of it were surveyed. KPFM was also discussed. KPFM was developed from EFM. The central part of this technique is to measure the CPD. Experimental measurements of SPM were described after theory part. Research work using AFM was presented. The newest technique of AFM, UHV-AFM has been used in investigating the nano-mechanical properties of different materials. Normally common AFM has shortcomings as it has either strict limit resolution or difficulties in interpreting the data from the measurements. In order to solve these problems, Ultra High Vacuum (UHV) conditions were applied to acquire quantitative results. A typical UHV-AFM uses a cantilever whose spring constant is relatively high (>100 N/m) to obtain high-resolution image. Experimental measurements using KPFM was presented after AFM. Researchers are using KPFM to acquire the topography and measuring the CPD of semiconductor or metal surfaces. Similarly as in AFM, KPFM works best in UHV environment. A typical UHV-KPFM also uses a cantilever whose spring constant is relatively high. A UHV-KPFM may be able to achieve a high resolution in CPD images. In the past 20 years many different kinds of SPM were invented and used. AFM, EFM, and KPFM are representatives of them. Researchers are still developing new techniques. However, in recent years, they pay more attention in improving the measurement accuracy instead of trying to invent new SPM. These three SPM continue to be frequently used. The current capabilities of SPM do not satisfy us completely. We still cant measure the Electrical field directly. We actually measure the capacitance gradient. There are also some other questions. This is because the electrostatic force depends very strongly on the geometry of the probe at all length scales, so any model is subject to two big problems. First, the geometry is not known with complete accuracy; and second, the tip shape can change during an experiment due to wear. In the future, maybe the problems could be overcome by using a tip with a very well defined shape, such as a carbon nanotube, for which a realistic geometrical model could be more easily constructed, and the wear could be avoided or reduced.

Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1996-01-01

We present a summary of the research, citations of publications resulting from the research and abstracts of such publications. We have made no inventions in the performance of the work in this project. The main goals of the project were to set up a Chemical Vapor Deposition (CVD) diamond growth system attached to an UltraHigh Vacuum (UHV) atomic resolution Scanning Tunneling Microscopy (STM) system and carry out experiments aimed at studying the properties and growth of diamond films using atomic resolution UHV STM. We successfully achieved these goals. We observed, for the first time, the atomic structure of the surface of CVD grown epitaxial diamond (100) films using UHV STM. We studied the effects of atomic hydrogen on the CVD diamond growth process. We studied the electronic properties of the diamond (100) (2x1) surface, and the effect of alkali metal adsorbates such as Cs on the work function of this surface using UHV STM spectroscopy techniques. We also studied, using STM, new electronic materials such as carbon nanotubes and gold nanostructures. This work resulted in four publications in refereed scientific journals and five publications in refereed conference proceedings.

Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions

NASA Astrophysics Data System (ADS)

Steinberger, R.; Celedón, C. E.; Bruckner, B.; Roth, D.; Duchoslav, J.; Arndt, M.; Kürnsteiner, P.; Steck, T.; Faderl, J.; Riener, C. K.; Angeli, G.; Bauer, P.; Stifter, D.

2017-07-01

Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contamination are essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, state-of-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way.

A fibre-coupled UHV-compatible variable angle reflection-absorption UV/visible spectrometer

NASA Astrophysics Data System (ADS)

Stubbing, J. W.; Salter, T. L.; Brown, W. A.; Taj, S.; McCoustra, M. R. S.

2018-05-01

We present a novel UV/visible reflection-absorption spectrometer for determining the refractive index, n, and thicknesses, d, of ice films. Knowledge of the refractive index of these films is of particular relevance to the astrochemical community, where they can be used to model radiative transfer and spectra of various regions of space. In order to make these models more accurate, values of n need to be recorded under astronomically relevant conditions, that is, under ultra-high vacuum (UHV) and cryogenic cooling. Several design considerations were taken into account to allow UHV compatibility combined with ease of use. The key design feature is a stainless steel rhombus coupled to an external linear drive (z-shift) allowing a variable reflection geometry to be achieved, which is necessary for our analysis. Test data for amorphous benzene ice are presented as a proof of concept, the film thickness, d, was found to vary linearly with surface exposure, and a value for n of 1.43 ± 0.07 was determined.

A Vision of China-Arab Interconnection Transmission Network Planning with UHVDC Technology

NASA Astrophysics Data System (ADS)

Wu, Dan; Liu, Yujun; Yin, Hongyuan; Xu, Qingshan; Xu, Xiaohui; Ding, Maosheng

2017-05-01

Developments in ultra-high-voltage (UHV) power systems and clean energy technologies are paving the way towards unprecedented energy market globalization. In accordance with the international community’s enthusiasm for building up the Global Energy Internet, this paper focuses on the feasibility of transmitting large-size electricity from northwest China to Arab world through a long-distance transnational power interconnection. The complete investigations on the grids of both the sending-end and receiving-end is firstly presented. Then system configuration of the transmission scheme and corridor route planning is proposed with UHVDC technology. Based on transmission costs’ investigation about similar transmission projects worldwide, the costs of the proposed transmission scheme are estimated through adjustment factors which represent differences in latitude, topography and economy. The proposed China-Arab transmission line sheds light on the prospects of power cooperation and resource sharing between China and Arab states, and appeals for more emphasis on green energy concentrated power interconnections from a global perspective.

Note: Mechanical in situ exfoliation of van der Waals materials

NASA Astrophysics Data System (ADS)

Pásztor, Á.; Scarfato, A.; Renner, Ch.

2017-07-01

Exfoliation, namely, the peeling of layered materials down to a single unit-cell thin foil, opens promising avenues to fabricate novel electronic materials. New properties and original functionalities emerge in the single and few layer configurations of a number of layered compounds, in particular in transition metal dichalcogenides. However, many of these thin exfoliated materials are very sensitive to ambient conditions impeding the exploration of this new and fascinating parameter space. Here we describe a method of mechanical exfoliation in ultra-high vacuum (UHV). This technique is easily adaptable to any UHV system and allows preparing and studying air sensitive nanoflakes in situ. We present the basic design and proof-of-concept scanning tunneling microscopy imaging of VSe2 nanoflakes.

Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field

NASA Astrophysics Data System (ADS)

von Allwörden, Henning; Eich, Andreas; Knol, Elze J.; Hermenau, Jan; Sonntag, Andreas; Gerritsen, Jan W.; Wegner, Daniel; Khajetoorians, Alexander A.

2018-03-01

We describe the design and performance of a scanning tunneling microscope (STM) that operates at a base temperature of 30 mK in a vector magnetic field. The cryogenics is based on an ultra-high vacuum (UHV) top-loading wet dilution refrigerator that contains a vector magnet allowing for fields up to 9 T perpendicular and 4 T parallel to the sample. The STM is placed in a multi-chamber UHV system, which allows in situ preparation and exchange of samples and tips. The entire system rests on a 150-ton concrete block suspended by pneumatic isolators, which is housed in an acoustically isolated and electromagnetically shielded laboratory optimized for extremely low noise scanning probe measurements. We demonstrate the overall performance by illustrating atomic resolution and quasiparticle interference imaging and detail the vibrational noise of both the laboratory and microscope. We also determine the electron temperature via measurement of the superconducting gap of Re(0001) and illustrate magnetic field-dependent measurements of the spin excitations of individual Fe atoms on Pt(111). Finally, we demonstrate spin resolution by imaging the magnetic structure of the Fe double layer on W(110).

Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field.

PubMed

von Allwörden, Henning; Eich, Andreas; Knol, Elze J; Hermenau, Jan; Sonntag, Andreas; Gerritsen, Jan W; Wegner, Daniel; Khajetoorians, Alexander A

2018-03-01

We describe the design and performance of a scanning tunneling microscope (STM) that operates at a base temperature of 30 mK in a vector magnetic field. The cryogenics is based on an ultra-high vacuum (UHV) top-loading wet dilution refrigerator that contains a vector magnet allowing for fields up to 9 T perpendicular and 4 T parallel to the sample. The STM is placed in a multi-chamber UHV system, which allows in situ preparation and exchange of samples and tips. The entire system rests on a 150-ton concrete block suspended by pneumatic isolators, which is housed in an acoustically isolated and electromagnetically shielded laboratory optimized for extremely low noise scanning probe measurements. We demonstrate the overall performance by illustrating atomic resolution and quasiparticle interference imaging and detail the vibrational noise of both the laboratory and microscope. We also determine the electron temperature via measurement of the superconducting gap of Re(0001) and illustrate magnetic field-dependent measurements of the spin excitations of individual Fe atoms on Pt(111). Finally, we demonstrate spin resolution by imaging the magnetic structure of the Fe double layer on W(110).

Versatile, high-sensitivity faraday cup array for ion implanters

DOEpatents

Musket, Ronald G.; Patterson, Robert G.

2003-01-01

An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10.sup.11 -10.sup.18 ions/cm.sup.2 to be extended to below 10.sup.6 ions/cm.sup.2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm.sup.2 and >750 cm.sup.2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

Study of Residual Gas Analyser (RGA) Response towards Known Leaks

NASA Astrophysics Data System (ADS)

Pathan, Firozkhan S.; Khan, Ziauddin; Semwal, Pratibha; George, Siju; Raval, Dilip C.; Thankey, Prashant L.; Manthena, Himabindu; Yuvakiran, Paravastu; Dhanani, Kalpesh R.

2012-11-01

Helium leak testing is the most versatile form of weld qualification test for any vacuum application. Almost every ultra-high vacuum (UHV) system utilizes this technique for insuring leak tightness for the weld joints as well as demountable joints. During UHV system under operational condition with many other integrated components, in-situ developed leaks identification becomes one of the prime aspect for maintaining the health of such system and for continuing the experiments onwards. Since online utilization of leak detector (LD) has many practical limitations, residual gas analyser (RGA) can be used as a potential instrument for online leak detection. For this purpose, a co-relation for a given leak rate between Leak Detector and RGA is experimentally established. This paper describes the experimental aspect and the relationship between leak detector and RGA.

Electrospray deposition of organic molecules on bulk insulator surfaces.

PubMed

Hinaut, Antoine; Pawlak, Rémy; Meyer, Ernst; Glatzel, Thilo

2015-01-01

Large organic molecules are of important interest for organic-based devices such as hybrid photovoltaics or molecular electronics. Knowing their adsorption geometries and electronic structures allows to design and predict macroscopic device properties. Fundamental investigations in ultra-high vacuum (UHV) are thus mandatory to analyze and engineer processes in this prospects. With increasing size, complexity or chemical reactivity, depositing molecules by thermal evaporation becomes challenging. A recent way to deposit molecules in clean conditions is Electrospray Ionization (ESI). ESI keeps the possibility to work with large molecules, to introduce them in vacuum, and to deposit them on a large variety of surfaces. Here, ESI has been successfully applied to deposit triply fused porphyrin molecules on an insulating KBr(001) surface in UHV environment. Different deposition coverages have been obtained and characterization of the surface by in-situ atomic force microscopy working in the non-contact mode shows details of the molecular structures adsorbed on the surface. We show that UHV-ESI, can be performed on insulating surfaces in the sub-monolayer regime and to single molecules which opens the possibility to study a variety of complex molecules.

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Design and development of high efficiency 140W space TWT with graphite collector

NASA Astrophysics Data System (ADS)

Srivastava, V.; Purohit, G.; Sharma, R. K.; Sharma, S. M.; Bera, A.; Bhaskar, P. V.; Singh, R. R.; Prasad, K.; Kiran, V.

2008-05-01

4-stage graphite collector assembly has been designed and developed for a 140W Ku-band space TWT to achieve the collector efficiency more than 80%. The UHV compatible, high density, copper impregnated POCO graphite (DFP-1C) was used to fabricate the four collector electrodes of the 4-stage depressed collector. Copper impregnated graphite material is used for the collector electrodes because of its low secondary electron emission coefficient, high thermal and electrical conductivities, easy machining and brazing, low thermal expansion coefficient and low weight. The graphite material was characterized for the UHV compatibility. The collector electrodes were precisely fabricated by careful machining, and technology was developed for brazing of graphite electrodes with high voltage alumina insulators. Complete TWT with four-stage graphite collector was developed and 140W output power at gain more than 55 dB was achieved. The TWT was pumped from both the gun and the collector ends.

Dispensing of very low volumes of ultra high viscosity alginate gels: a new tool for encapsulation of adherent cells and rapid prototyping of scaffolds and implants.

PubMed

Gepp, Michael M; Ehrhart, Friederike; Shirley, Stephen G; Howitz, Steffen; Zimmermann, Heiko

2009-01-01

We present a tool for dispensing very low volumes (20 nL or more) of ultra high viscosity (UHV) medical-grade alginate hydrogels. It uses a modified piezo-driven micrometering valve, integrated into a versatile system that allows fast prototyping of encapsulation procedures and scaffold production. Valves show excellent dispensing properties for UHV alginate in concentrations of 0.4% and 0.7% and also for aqueous liquids. An optimized process flow provides excellent handling of biological samples under sterile conditions. This technique allows the encapsulation of adherent cells and structuring of substrates for biotechnology and regenerative medicine. A variety of cell lines showed at least 70% viability after encapsulation (including cell lines that are relevant in regenerative medicine like Hep G2), and time-lapse analysis revealed cells proliferating and showing limited motility under alginate spots. Cells show metabolic activity, gene product expression, and physiological function. Encapsulated cells have contact with the substrate and can exchange metabolites while being isolated from macromolecules in the environment. Contactless dispensing allows structuring of substrates with alginate, isolation and transfer of cell-alginate complexes, and the dispensing of biological active hydrogels like extracellular matrix-derived gels.

Investigating of the Field Emission Performance on Nano-Apex Carbon Fiber and Tungsten Tips

NASA Astrophysics Data System (ADS)

Mousa, Marwan S.; Alnawasreh, Shadi; Madanat, Mazen A.; Al-Rabadi, Anas N.

2015-10-01

Field electron emission measurements have been performed on carbon-based and tungsten microemitters. Several samples of both types of emitters with different apex radii have been obtained employing electrolytic etching techniques using sodium hydroxide (NaOH) solution with different molarities depending on the material used. A suitable, home-built, field electron microscope (FEM) with 10 mm tip to screen separation distance was used to electrically characterize the electron emitters. Measurements were carried out under ultra high vacuum (UHV) conditions with base pressure of 10-9 mbar. The current-voltage characteristics (I-V) presented as Fowler-Nordheim (FN) type plots, and field electron emission images have been recorded. In this work, initial comparison of the field electron emission performance of these micro and nanoemitters has been carried out, with the aim of obtaining a reliable, stable and long life powerful electron source. We compare the apex radii measured from the micrographs obtained from the SEM images to those extracted from the FN-type _I-V_plots for carbon fibers and tungsten tips.

Multifunctional Ultra-high Vacuum Apparatus for Studies of the Interactions of Chemical Warfare Agents on Complex Surfaces

DTIC Science & Technology

2014-01-02

of the formation of a hydrogen-bonded hydroxyl. Characteristic modes of the sarin molecule itself are also ob- served. These experimental results show...chemical warfare agent, surface science, uptake, decontamination, filtration , UHV, XPS, FTIR, TPD REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S...challenges that accompany the research of these toxic, often very low vapor pressure, compounds. While results of vacuum-based surface science

Combined UHV/high-pressure catalysis setup for depth-resolved near-surface spectroscopic characterization and catalytic testing of model catalysts

NASA Astrophysics Data System (ADS)

Mayr, Lukas; Rameshan, Raffael; Klötzer, Bernhard; Penner, Simon; Rameshan, Christoph

2014-05-01

An ultra-high vacuum (UHV) setup for "real" and "inverse" model catalyst preparation, depth-resolved near-surface spectroscopic characterization, and quantification of catalytic activity and selectivity under technologically relevant conditions is described. Due to the all-quartz reactor attached directly to the UHV-chamber, transfer of the catalyst for in situ testing without intermediate contact to the ambient is possible. The design of the UHV-compatible re-circulating batch reactor setup allows the study of reaction kinetics under close to technically relevant catalytic conditions up to 1273 K without contact to metallic surfaces except those of the catalyst itself. With the attached differentially pumped exchangeable evaporators and the quartz-microbalance thickness monitoring equipment, a reproducible, versatile, and standardised sample preparation is possible. For three-dimensional near-surface sample characterization, the system is equipped with a hemispherical analyser for X-ray photoelectron spectroscopy (XPS), electron-beam or X-ray-excited Auger-electron spectroscopy, and low-energy ion scattering measurements. Due the dedicated geometry of the X-ray gun (54.7°, "magic angle") and the rotatable sample holder, depth analysis by angle-resolved XPS measurements can be performed. Thus, by the combination of characterisation methods with different information depths, a detailed three-dimensional picture of the electronic and geometric structure of the model catalyst can be obtained. To demonstrate the capability of the described system, comparative results for depth-resolved sample characterization and catalytic testing in methanol steam reforming on PdGa and PdZn near-surface intermetallic phases are shown.

High-quality EuO thin films the easy way via topotactic transformation

DOE PAGES

Mairoser, Thomas; Mundy, Julia A.; Melville, Alexander; ...

2015-07-16

Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, but nonetheless powerful means of creating such films is via topotactic transformation, in which a chemical reaction transforms a single crystal of one phase into a single crystal of a different phase, which inherits its orientation from the original crystal. Topotactic reactions may be applied to epitactic films to substitute, add or remove ions to yield epitactic films of different phases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum (UHV) means of growing highly oriented single crystalline thin films of the easily over-oxidizedmore » half-metallic semiconductor europium monoxide (EuO) with a perfection rivalling that of the best films of the same material grown by molecular-beam epitaxy or UHV pulsed-laser deposition. Lastly, as the technique only requires high-vacuum deposition equipment, it has the potential to drastically improve the accessibility of high-quality single crystalline films of EuO as well as other difficult-to-synthesize compounds.« less

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

PubMed Central

Wang, Rui; Lu, Fen; Fan, Wei Jun; Liu, Chong Yang; Loh, Ter-Hoe; Nguyen, Hoai Son; Narayanan, Balasubramanian

2007-01-01

Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

DOE PAGES

Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; ...

2014-08-01

Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film.more » We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.« less

Characterization and Evaluation of Ti-Zr-V Non-evaporable Getter Films Used in Vacuum Systems

NASA Astrophysics Data System (ADS)

Ferreira, M. J.; Seraphim, R. M.; Ramirez, A. J.; Tabacniks, M. H.; Nascente, P. A. P.

Among several methods used to obtain ultra-high vacuum (UHV) for particles accelerators chambers, it stands out the internal coating with metallic films capable of absorbing gases, called NEG (non-evaporable getter). Usually these materials are constituted by elements of great chemical reactivity and solubility (such as Ti, Zr, and V), at room temperature for oxygen and other gases typically found in UHV, such as H2, CO, and CO2. Gold and ternary Ti-Zr-V films were produced by magnetron sputtering, and their composition, structure, morphology, and aging characteristics were characterized by energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), field emission gun sc anning electronmicroscopy (FEG-SEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM). The comparison between the produced films and commercial samples indicated that the desirable characteristics depend on the nanometric structure of the films and that this structure is sensitive to the heat treatments.

MoS2-Filled PEEK Composite as a Self-Lubricating Material for Aerospace Applications

NASA Technical Reports Server (NTRS)

Theiler, Geraldine; Gradt, Thomas

2010-01-01

At BAM, several projects were conducted in the past years dealing with the tribological properties of friction couples at cryogenic temperature and in vacuum environment. Promising candidates for vacuum application are MoS2-filled PEEK/PTFE composites, which showed a friction coefficient as low as 0.03 in high vacuum. To complete the tribological profile of these composites, further tests were performed in ultra-high vacuum (UHV) at room temperature. In this paper, friction and stick slip behavior, as well as outgassing characteristics during the test are presented.

Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

NASA Astrophysics Data System (ADS)

Lackner, Peter; Choi, Joong Il Jake; Diebold, Ulrike; Schmid, Michael

2017-10-01

A sputter deposition source for the use in ultrahigh vacuum (UHV) is described, and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas and the Ar+ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar+ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for the deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of 9 ×1 0-6 mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of ≈1 ML in 250 s was achieved at the substrate (at a distance of ≈50 mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar+ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target.

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Development of New Low Temperature Systems at Janis Research

NASA Astrophysics Data System (ADS)

Shvarts, V.; Jirmanus, M. N.; Zhao, Z.

2006-09-01

A new line of ultra low loss He-3 and He-4 superconducting magnet systems and UHV compatible He-3 systems for scanning tunneling microscopy studies have been developed during the past year. This paper discusses the details of the design and performance for the various systems.

The Nickel(111)/Alkaline Electrolyte Interface

NASA Technical Reports Server (NTRS)

Wang, Kuilong; Chottiner, G. S.; Scherson, D. A.; Reid, Margaret A.

1991-01-01

The electrochemical properties of Ni (111) prepared and characterized in ultra high vacuum, UHV, by surface analytical techniques have been examined in alkaline media by cyclic voltammetry using an UHV-electrochemical cell transfer system designed and built in this laboratory. Prior to the transfer, the Ni(111) surfaces were exposed to saturation coverages of CO in UHV in an attempt to protect the surface from possible contamination with other gases during the transfer. Temperature Programmed Desorption, TPD, of CO-dosed Ni (111) surfaces displaying sharp c(4x2), LEED patterns, subsequently exposed to water-saturated Ar at atmospheric pressure in an auxiliary UHV compatible chamber and finally transferred back to the main UHV chamber, yielded CO2 and water as the only detectable products. This indicates that the CO-dosed surfaces react with water and/or bicarbonate and hydroxide as the most likely products. Based on the integration of the TPD peaks, the combined amounts of H2O and CO2 were found to be on the order of a single monolayer. The reacted c(4x2)CO/Ni(111) layer seems to protect the surface from undergoing spontaneous oxidation in strongly alkaline solutions. This was evidenced by the fact that the open circuit potential observed immediately after contact with deaerated 0.1 M KOH was about 0.38 V vs. DHE, drifting slightly towards more negative values prior to initiating the voltametric scans. The average ratio of the integrated charge obtained in the first positive linear scan in the range of 0.35 to 1.5 V vs. DHE (initiated at the open circuit potential) and the first (and subsequent) linear negative scans in the same solution yielded for various independent runs a value of 3.5 +/- 0.3. Coulometric analysis of the cyclic voltammetry curves indicate that the electrochemically formed oxyhydroxide layer involves a charge equivalent to 3.2 +/- 0.4 layers of Ni metal.

Adsorption behavior of Zn porphyrins on a (1 0 1) face of anatase TiO2

NASA Astrophysics Data System (ADS)

Zajac, Lukasz; Bodek, Lukasz; Such, Bartosz

2018-06-01

The adsorption behavior of porphyrin molecules on anatase TiO2(1 0 1) has been investigated with scanning tunneling microscopy (STM) in ultra-high vacuum (UHV) at room temperature. At low coverage, the ZnTPP molecules have a tendency to adsorb on the one type of step edges forming molecular chains. Due to relatively high mobility of molecules stable assemblies appear only close to a monolayer coverage. Zn porphyrins in self-assembled molecular domains form a commensurate structure. In-plane rotation of the molecules leads to formation of two domains of different chirality.

Preparation of clean surfaces and Se vacancy formation in Bi2Se3 by ion bombardment and annealing

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Zhu, Haoshan; Valles, Connie M.; Yarmoff, Jory A.

2017-08-01

Bismuth Selenide (Bi2Se3) is a topological insulator (TI) with a structure consisting of stacked quintuple layers. Single crystal surfaces are commonly prepared by mechanical cleaving. This work explores the use of low energy Ar+ ion bombardment and annealing (IBA) as an alternative method to produce reproducible and stable Bi2Se3 surfaces under ultra-high vacuum (UHV). It is found that a clean and well-ordered surface can be prepared by a single cycle of 1 keV Ar+ ion bombardment and 30 min of annealing. Low energy electron diffraction (LEED) and detailed low energy ion scattering (LEIS) measurements show no differences between IBA-prepared surfaces and those prepared by in situ cleaving in UHV. Analysis of the LEED patterns shows that the optimal annealing temperature is 450 °C. Angular LEIS scans reveal the formation of surface Se vacancies when the annealing temperature exceeds 520 °C.

The preparation of pure niobium for neutron dosimetry purposes

NASA Astrophysics Data System (ADS)

Schulze, Klaus; Krehl, Michael

1985-06-01

A technique is described for the preparation of high purity niobium for use in fast neutron dosimetry. Based on results of known purification processes for niobium, an optimized method has been developed, consisting of: (1) a double electrolytic refining in an eutectic lithium-, sodium-, potassium-fluoride melt, containing fluoro-potassium niobate (K 2NbF 7), (2) electron beam float zone melting (EBFZM) in ultra high vacuum (UHV) and (3) UHV treatments. Starting with EBFZM of niobium of commercial quality (140 μg/g Ta, 35 μg/g W) the tantalum and tungsten contents were reduced by a first electrolysis to approximately 4 and 4 × 10 -2 μg/g, respectively. For a second electrolytic refining using a salt bath with extremely low tantalum and tungsten contents, this material was subjected to an additional EBFZM process. The niobium metal produced by this step was three times zone melted to reduce those elements (e.g. Fe, Co, Ni, O, N) which increased during the electrolyses. Material produced by this technique has impurity concentrations below 0.4 μg/g of tantalum and 10 -2 μg/g of tungsten. The concentration of the interstitials (C, O, N except H) is below the detection limit of classical analytical methods. A further reduction of the interstitials by annealing treatments in UHV of this material resulted in an electrical residual resistivity ratio (RRR) ρ(295 K)/ ρ(4.2 K) = 24 500 indicating an impurity concentration far below 1 μg/g.

Highly hydrogen-sensitive thermal desorption spectroscopy system for quantitative analysis of low hydrogen concentration (˜1 × 1016 atoms/cm3) in thin-film samples

NASA Astrophysics Data System (ADS)

Hanna, Taku; Hiramatsu, Hidenori; Sakaguchi, Isao; Hosono, Hideo

2017-05-01

We developed a highly hydrogen-sensitive thermal desorption spectroscopy (HHS-TDS) system to detect and quantitatively analyze low hydrogen concentrations in thin films. The system was connected to an in situ sample-transfer chamber system, manipulators, and an rf magnetron sputtering thin-film deposition chamber under an ultra-high-vacuum (UHV) atmosphere of ˜10-8 Pa. The following key requirements were proposed in developing the HHS-TDS: (i) a low hydrogen residual partial pressure, (ii) a low hydrogen exhaust velocity, and (iii) minimization of hydrogen thermal desorption except from the bulk region of the thin films. To satisfy these requirements, appropriate materials and components were selected, and the system was constructed to extract the maximum performance from each component. Consequently, ˜2000 times higher sensitivity to hydrogen than that of a commercially available UHV-TDS system was achieved using H+-implanted Si samples. Quantitative analysis of an amorphous oxide semiconductor InGaZnO4 thin film (1 cm × 1 cm × 1 μm thickness, hydrogen concentration of 4.5 × 1017 atoms/cm3) was demonstrated using the HHS-TDS system. This concentration level cannot be detected using UHV-TDS or secondary ion mass spectroscopy (SIMS) systems. The hydrogen detection limit of the HHS-TDS system was estimated to be ˜1 × 1016 atoms/cm3, which implies ˜2 orders of magnitude higher sensitivity than that of SIMS and resonance nuclear reaction systems (˜1018 atoms/cm3).

Underpotential Deposition of Silver on Pt(111). Part 1. Concentration Dependence

DTIC Science & Technology

1990-01-01

acid (ULTREX, J.T. Baker) was used as the supporting electrolyte. Silver solutions of 1.00 mM, 0.10 mM, and 0.005 mM were prepared by dissolving Ag 2SO 4...were immersed in hot nitric acid for 10 minutes. For the ultra-high vacuum (UHV) experiments a thermocouple was also spot-welded to the edge of the...a Ford Foundation Post Doctoral Fellowship. HDA is a A.P. Sloan Foundation Fellow (1987-1991). 16 REFERENCES 1. G.W. Tindall and S. Bruckenstein

Versatile, low-cost, computer-controlled, sample positioning system for vacuum applications

NASA Technical Reports Server (NTRS)

Vargas-Aburto, Carlos; Liff, Dale R.

1991-01-01

A versatile, low-cost, easy to implement, microprocessor-based motorized positioning system (MPS) suitable for accurate sample manipulation in a Second Ion Mass Spectrometry (SIMS) system, and for other ultra-high vacuum (UHV) applications was designed and built at NASA LeRC. The system can be operated manually or under computer control. In the latter case, local, as well as remote operation is possible via the IEEE-488 bus. The position of the sample can be controlled in three linear orthogonal and one angular coordinates.

Skating on thin ice: surface chemistry under interstellar conditions

NASA Astrophysics Data System (ADS)

Fraser, H.; van Dishoeck, E.; Tielens, X.

Solid CO2 has been observed towards both active star forming regions and quiescent clouds (Gerakines et. al. (1999)). The high abundance of CO2 in the solid phase, and its low abundance in the gas phase, support the idea that CO2 is almost exclusively formed in the solid state. Several possible formation mechanisms have been postulated (Ruffle &Herbst (2001): Charnley &Kaufman (2000)), and the detection of CO2 towards quiescent sources such as Elias 16 (Whittet et. al. (1998)) clearly suggests that CO2 can be produced in the absence of UV or electron mediated processes. The most likely route is via the surface reactions between O atoms, or OH radicals, and CO. The tools of modern surface- science offer us the potential to determine many of the physical and chemical attributes of icy interstellar grain mantles under highly controlled conditions, that closely mimic interstellar environments. The Leiden Surface Reaction Simulation Device ( urfreside) combines UHV (UltraS High Vacuum) surface science techniques with an atomic beam to study chemical reactions occurring on the SURFACE and in the BULK of interstellar ice grain mimics. By simultaneously combining two or more surface analysis techniques, the chemical kinetics, reaction mechanisms and activation energies can be determined directly. The experiment is aimed at identifying the key barrierless reactions and desorption pathways on and in H2 O and CO ices under interstellar conditions. The results from traditional HV (high vacuum) and UHV studies of the CO + O and CO + OH reactions will be presented in this paper. Charnley, S.B., & Kaufman, M.J., 2000, ApJ, 529, L111 Gerakines, P.A., 1999, ApJ, 522, 357 Ruffle, D.P., & Herbst, E., 2001, MNRAS, 324, 1054 Whittet, D.C.B., et.al., 1998, ApJ, 498, L159

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayashi, Kazushi, E-mail: hayashi.kazushi@kobelco.com; Hino, Aya; Tao, Hiroaki

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deducedmore » that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films.« less

Characterization of a Compact Cryogenic Package Approach to Ion Trap Quantum Comuting

NASA Astrophysics Data System (ADS)

Spivey, Robert; Vrijsen, Geert; Ahn, Byeong-Hyeon; Hudek, Kai; Crain, Stephen; van Rynbach, Andre; Rachel, Noek; Kim, Jungsang

One challenge for the expansion of trapped ion systems to a large scale is the lack of repeatable integration technology to realize compact and stable operating environment. In this work, we present a novel ion trapping environment where conventional ultra-high vacuum (UHV) chambers are replaced with a sealed ceramic package operating in a cryogenic environment. A microfabricated surface ion trap mounted on a 100-pin ceramic pin grid array (CPGA) package is placed in a UHV environment. A titanium lid with windows for optical access is then attached to the CPGA via an indium seal which maintains the UHV conditions for the ion trap. The trap package assembly is operated at cryogenic temperatures (5K) in order to freeze out most of the residual background gas. Activated charcoal is used to pump remaining helium and hydrogen molecules. Metallic Yb ablated using a Q-switched Nd:YAG laser at 1,064 nm is used as the atomic source. A compact radio frequency resonant circuit is used to create the RF potential for trapping. A low output impedance amplifier drives a superconducting inductor of value 2 uH in series with the trap capacitance in order to produce 200V at 26 MHz with low heating at 5K. We present the experimental progress towards trapping ions in this compact cryogenic setup.

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

DTIC Science & Technology

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

Scanning probe microscopy induced surface modifications of the topological insulator Bi2Te3 in different environments

NASA Astrophysics Data System (ADS)

Netsou, Asteriona-Maria; Thupakula, Umamahesh; Debehets, Jolien; Chen, Taishi; Hirsch, Brandon; Volodin, Alexander; Li, Zhe; Song, Fengqi; Seo, Jin Won; De Feyter, Steven; Schouteden, Koen; Van Haesendonck, Chris

2017-08-01

We investigated the topological insulator (TI) Bi2Te3 in four different environments (ambient, ultra-high vacuum (UHV), nitrogen gas and organic solvent environment) using scanning probe microscopy (SPM) techniques. Upon prolonged exposure to ambient conditions and organic solvent environments the cleaved surface of the pristine Bi2Te3 is observed to be strongly modified during SPM measurements, while imaging of freshly cleaved Bi2Te3 in UHV and nitrogen gas shows considerably less changes of the Bi2Te3 surface. We conclude that the reduced surface stability upon exposure to ambient conditions is triggered by adsorption of molecular species from ambient, including H2O, CO2, etc which is verified by Auger electron spectroscopy. Our findings of the drastic impact of exposure to ambient on the Bi2Te3 surface are crucial for further in-depth studies of the intrinsic properties of the TI Bi2Te3 and for potential applications that include room temperature TI based devices operated under ambient conditions.

Application of the double paddle oscillator for quantifying environmental, surface mass variation

NASA Astrophysics Data System (ADS)

Wei, Haoyan; Pomeroy, Joshua

2016-04-01

Sub-monolayer sensitivity to controlled gas adsorption and desorption is demonstrated using a double paddle oscillator (DPO) installed within an ultra-high vacuum (UHV) environmental chamber equipped with in situ film deposition, (multi)gas admission and temperature control. This effort is intended to establish a robust framework for quantitatively comparing mass changes due to gas loading and unloading on different materials systems selected or considered for use as mass artefacts. Our apparatus is composed of a UHV chamber with gas introduction and temperature control and in situ materials deposition for future materials testing enabling in situ preparation of virgin surfaces that can be monitored during initial exposure to gasses of interest. These tools are designed to allow us to comparatively evaluate how different materials gain or lose mass due to precisely controlled environmental excursions, with a long term goal of measuring changes in absolute mass. Herein, we provide a detailed experimental description of the apparatus, an evaluation of the initial performance, and demonstration measurements using nitrogen adsorption and desorption directly on the DPO.

Application of the double paddle oscillator for quantifying environmental, surface mass variation

PubMed Central

Wei, Haoyan; Pomeroy, Joshua

2016-01-01

Sub-monolayer sensitivity to controlled gas adsorption and desorption is demonstrated using a double paddle oscillator (DPO) installed within an UHV (ultra-high vacuum) environmental chamber equipped with in situ film deposition, (multi)gas admission and temperature control. This effort is intended to establish a robust framework for quantitatively comparing mass changes due to gas loading and unloading on different materials systems selected or considered for use as mass artifacts. Our apparatus is composed of a UHV chamber with gas introduction and temperature control and in-situ materials deposition for future materials testing enabling in situ preparation of virgin surfaces that can be monitored during initial exposure to gasses of interest. These tools are designed to allow us to comparatively evaluate how different materials gain or lose mass due to precisely controlled environmental excursions, with a long term goal of measuring changes in absolute mass. Herein, we provide a detailed experimental description of the apparatus, an evaluation of the initial performance, and demonstration measurements using nitrogen adsorption and desorption directly on the DPO. PMID:27212736

A simple compact UHV and high magnetic field compatible inertial nanopositioner

NASA Astrophysics Data System (ADS)

Pang, Zongqiang; Li, Xiang; Xu, Lei; Rong, Zhou; Liu, Ruilan

2015-01-01

We present a novel simple piezoelectric nanopositioner which just has one piezoelectric scanner tube (PST) and one driving signal, using two short quartz rods and one BeCu spring which form a triangle to press the central shaft and can promise the nanopositioner's rigidity. Applying two pulse inverted voltage signals on the PST's outer and inner electrodes, respectively, according to the principle of piezoelectricity, the PST will elongate or contract suddenly while the central shaft will keep stationary for its inertance, so the central shaft will be sliding a distance relative to quartz rods and spring, and then withdraw the pulse voltages slowly, the central shaft will move upward or downward one step. The heavier of the central shaft, the better moving stability, so the nanopositioner has high output force. Due to its compactness and mechanical stability, it can be easily implanted into some extreme conditions, such as ultrahigh vacuum, ultralow temperature, and high magnetic field.

High resolution separations of charge variants and disulfide isomers of monoclonal antibodies and antibody drug conjugates using ultra-high voltage capillary electrophoresis with high electric field strength.

PubMed

Henley, W Hampton; He, Yan; Mellors, J Scott; Batz, Nicholas G; Ramsey, J Michael; Jorgenson, James W

2017-11-10

Ultra-high voltage capillary electrophoresis with high electric field strength has been applied to the separation of the charge variants, drug conjugates, and disulfide isomers of monoclonal antibodies. Samples composed of many closely related species are difficult to resolve and quantify using traditional analytical instrumentation. High performance instrumentation can often save considerable time and effort otherwise spent on extensive method development. Ideally, the resolution obtained for a given CE buffer system scales with the square root of the applied voltage. Currently available commercial CE instrumentation is limited to an applied voltage of approximately 30kV and a maximum electric field strength of 1kV/cm due to design limitations. The instrumentation described here is capable of safely applying potentials of at least 120kV with electric field strengths over 2000V/cm, potentially doubling the resolution of the best conventional CE buffer/capillary systems while decreasing analysis time in some applications. Separations of these complex mixtures using this new instrumentation demonstrate the potential of ultra-high voltage CE to identify the presence of previously unresolved components and to reduce analysis time for complex mixtures of antibody variants and drug conjugates. Copyright © 2017 Elsevier B.V. All rights reserved.

Ultra high vacuum heating and rotating specimen stage

DOEpatents

Coombs, III, Arthur W.

1995-01-01

A heating and rotating specimen stage provides for simultaneous specimen heating and rotating. The stage is ideally suited for operation in ultrahigh vacuum (1.times.10.sup.-9 torr or less), but is useful at atmosphere and in pressurized systems as well. A specimen is placed on a specimen holder that is attached to a heater that, in turn, is attached to a top housing. The top housing is rotated relative to a bottom housing and electrically connected thereto by electrically conductive brushes. This stage is made of materials that are compatible with UHV, able to withstand high temperatures, possess low outgassing rates, are gall and seize resistant, and are able to carry substantial electrical loading without overheating.

SnTe microcrystals: Surface cleaning of a topological crystalline insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saghir, M., E-mail: M.Saghir@warwick.ac.uk, E-mail: G.Balakrishnan@warwick.ac.uk; Walker, M.; McConville, C. F.

Investigating nanometer and micron sized materials thought to exhibit topological surface properties that can present a challenge, as clean surfaces are a pre-requisite for band structure measurements when using nano-ARPES or laser-ARPES in ultra-high vacuum. This issue is exacerbated when dealing with nanometer or micron sized materials, which have been prepared ex-situ and so have been exposed to atmosphere. We present the findings of an XPS study where various cleaning methods have been employed to reduce the surface contamination and preserve the surface quality for surface sensitive measurements. Microcrystals of the topological crystalline insulator SnTe were grown ex-situ and transferredmore » into ultra high vacuum (UHV) before being treated with either atomic hydrogen, argon sputtering, annealing, or a combination of treatments. The samples were also characterised using the scanning electron microscopy, both before and after treatment. It was found that atomic hydrogen cleaning with an anneal cycle (200 °C) gave the best clean surface results.« less

An ultra-stable voltage source for precision Penning-trap experiments

NASA Astrophysics Data System (ADS)

Böhm, Ch.; Sturm, S.; Rischka, A.; Dörr, A.; Eliseev, S.; Goncharov, M.; Höcker, M.; Ketter, J.; Köhler, F.; Marschall, D.; Martin, J.; Obieglo, D.; Repp, J.; Roux, C.; Schüssler, R. X.; Steigleder, M.; Streubel, S.; Wagner, Th.; Westermann, J.; Wieder, V.; Zirpel, R.; Melcher, J.; Blaum, K.

2016-08-01

An ultra-stable and low-noise 25-channel voltage source providing 0 to -100 V has been developed. It will supply stable bias potentials for Penning-trap electrodes used in high-precision experiments. The voltage source generates all its supply voltages via a specially designed transformer. Each channel can be operated either in a precision mode or can be dynamically ramped. A reference module provides reference voltages for all the channels, each of which includes a low-noise amplifier to gain a factor of 10 in the output stage. A relative voltage stability of δV / V ≈ 2 ×10-8 has been demonstrated at -89 V within about 10 min.

New control strategies with inertial monolithic sensors: advantages and limitations in the control of benches and platforms for seismic isolation

NASA Astrophysics Data System (ADS)

Barone, F.; Giordano, G.; Acernese, F.; Romano, R.

2018-03-01

In this paper, we present some innovative and general strategies for the control of benches and platforms, that the introduction of the new class of monolithic UNISA Folded Pendulum is now making it possible, also in terms of environmental conditions, like ultra-high-vacuum (UHV), cryogenics and harsh environments. In particular, we present and discuss a parametric analysis of the control models in connection with the sensors limitations in terms of sensitivity and band. Finally, we present and discuss some experimental laboratory tests on a laboratory platform, underlining the present advantages and the expected future improvements.

Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

NASA Astrophysics Data System (ADS)

Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo

2018-05-01

An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.

UHV AFM based colloidal probe studies of adhesive properties of VAlN hard coatings

NASA Astrophysics Data System (ADS)

Wiesing, M.; de los Arcos, T.; Grundmeier, G.

2018-01-01

The adhesion of polystyrene (PS) on V0.27Al0.29N0.44 and the related influence of the oxidation states of both surfaces was investigated using X-Ray Photoelectron Spectroscopy (XPS) and Colloidal Force Spectroscopy (CFS) in Ultra-High Vacuum (UHV). Complementary, the intimate relation between the adhesion force, the chemical structure and surface polarizability was investigated by XPS valence band spectroscopy and the calculation of non-retarded Hamaker coefficients using Lifshitz theory based on optical data as derived from Reflection Electron Energy Loss Spectroscopy (REELS) spectra. The combined electron and force spectroscopic analysis of the interaction forces disclosed quantitatively the separation of the adhesion force in van der Waals and Lewis acid-base contributions. Further, the surface polarizability of VAlN was shown to be unaffected by oxygen incorporation due to the formation of an only gradually oxidized surface comprising a range of vanadium oxidation states. In contrast, the adhesion force analysis revealed additional Lewis acid-base interactions between the oxidized and non-oxidized VAlN surfaces and carboxyl groups present in the surface of PS after an oxidative oxygen beam treatment.

Ultra high vacuum heating and rotating specimen stage

DOEpatents

Coombs, A.W. III

1995-05-02

A heating and rotating specimen stage provides for simultaneous specimen heating and rotating. The stage is ideally suited for operation in ultrahigh vacuum (1{times}10{sup {minus}9} torr or less), but is useful at atmosphere and in pressurized systems as well. A specimen is placed on a specimen holder that is attached to a heater that, in turn, is attached to a top housing. The top housing is rotated relative to a bottom housing and electrically connected thereto by electrically conductive brushes. This stage is made of materials that are compatible with UHV, able to withstand high temperatures, possess low outgassing rates, are gall and seize resistant, and are able to carry substantial electrical loading without overheating. 5 figs.

Ultra-short pulse generator

DOEpatents

McEwan, T.E.

1993-12-28

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shock wave diode, which increases and sharpens the pulse even more. 5 figures.

Ultra-short pulse generator

DOEpatents

McEwan, Thomas E.

1993-01-01

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shockwave diode, which increases and sharpens the pulse even more.

High-performance Ge p-i-n photodetector on Si substrate

NASA Astrophysics Data System (ADS)

Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

2015-05-01

High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System.

PubMed

Shen, Chih-Lung; Liou, Heng

2017-11-15

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%.

Magnetic Material Assessment of a Novel Ultra-High Step-Up Converter with Single Semiconductor Switch and Galvanic Isolation for Fuel-Cell Power System

PubMed Central

Shen, Chih-Lung; Liou, Heng

2017-01-01

In this paper, a novel step-up converter is proposed, which has the particular features of single semiconductor switch, ultra-high conversion ratio, galvanic isolation, and easy control. Therefore, the proposed converter is suitable for the applications of fuel-cell power system. Coupled inductors and switched capacitors are incorporated in the converter to obtain an ultra-high voltage ratio that is much higher than that of a conventional high step-up converter. Even if the turns ratio of coupled inductor and duty ratio are only to be 1 and 0.5, respectively, the converter can readily achieve a voltage gain of up to 18. Owing to this outstanding performance, it can also be applied to any other low voltage source for voltage boosting. In the power stage, only one active switch is used to handle the converter operation. In addition, the leakage energy of the two couple inductors can be totally recycled without any snubber, which simplifies the control mechanism and improves the conversion efficiency. Magnetic material dominates the conversion performance of the converter. Different types of iron cores are discussed for the possibility to serve as a coupled inductor. A 200 W prototype with 400 V output voltage is built to validate the proposed converter. In measurement, it indicates that the highest efficiency can be up to 94%. PMID:29140282

SPM investigation of local aging effects in glassy polymers

NASA Astrophysics Data System (ADS)

Crider, Philip

2005-03-01

We investigate the cooperative and heterogeneous nature of glassy dynamics by nanometer-scale probing in a glassy polymer, Polyvinyl-Actetate (PVAc), with a Scanning Force Microscope (SFM). Using ultra-high-vacuum (UHV) Scanning Capacitive Force Microscopy techniques, nanometer-scale capacitive responses are probed. Dielectric relaxation near the glass transition is investigated, and scanning capabilities are utilized to analyze spatial response on a nanometer scale. The results of these studies may yield insight into the understanding of temperature-dependent cooperative length scales, local aging properties, and energy landscape properties of evolving dipole clusters on a mesoscopic scale. Results are used to test the validity and relevance of current models of glassy dynamics.

UHV-TEM-REM Studies of Si(111) Surfaces

NASA Astrophysics Data System (ADS)

Yagi, K.; Yamanaka, A.; Sato, H.; Shima, M.; Ohse, H.; Ozawa, S.; Tanishiro, Y.

Recent progresses of ultra-high vacuum transmission and reflection electron microscope studies of clean Si(111) surfaces are described. Anisotropy of surface atomic steps such as step energy, bunching of steps, are studied. Out of phase boundaries are observed in transmission mode and its energy relative to the step energy is studied. The phase transition between the 1 × 1 and the 7 × 7 structures around 830°C, studied previously is re-examined under various conditions. Contraction strains of the 7 × 7 structure and adatom density on terraces play important role during the transition. Diffuse scattering observed by LEED and RHEED above the transition temperature is not observed in teh TED pattern from a thin film.

Ultra-Smooth ZnS Films Grown on Silicon via Pulsed Laser Deposition

NASA Astrophysics Data System (ADS)

Reidy, Christopher; Tate, Janet

2011-10-01

Ultra-smooth, high quality ZnS films were grown on (100) and (111) oriented Si wafers via pulsed laser deposition with a KrF excimer laser in UHV (10-9 Torr). The resultant films were examined with optical spectroscopy, electron diffraction, and electron probe microanalysis. The films have an rms roughness of ˜1.5 nm, and the film stoichiometry is approximately Zn:S :: 1:0.87. Additionally, each film exhibits an optical interference pattern which is not a function of probing location on the sample, indicating excellent film thickness uniformity. Motivation for high-quality ZnS films comes from a proposed experiment to measure carrier amplification via impact ionization at the boundary between a wide-gap and a narrow-gap semiconductor. If excited charge carriers in a sufficiently wide-gap harvester can be extracted into a narrow-gap host material, impact ionization may occur. We seek near-perfect interfaces between ZnS, with a direct gap between 3.3 and 3.7 eV, and Si, with an indirect gap of 1.1 eV.

Four-probe measurements with a three-probe scanning tunneling microscope.

PubMed

Salomons, Mark; Martins, Bruno V C; Zikovsky, Janik; Wolkow, Robert A

2014-04-01

We present an ultrahigh vacuum (UHV) three-probe scanning tunneling microscope in which each probe is capable of atomic resolution. A UHV JEOL scanning electron microscope aids in the placement of the probes on the sample. The machine also has a field ion microscope to clean, atomically image, and shape the probe tips. The machine uses bare conductive samples and tips with a homebuilt set of pliers for heating and loading. Automated feedback controlled tip-surface contacts allow for electrical stability and reproducibility while also greatly reducing tip and surface damage due to contact formation. The ability to register inter-tip position by imaging of a single surface feature by multiple tips is demonstrated. Four-probe material characterization is achieved by deploying two tips as fixed current probes and the third tip as a movable voltage probe.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Hao, E-mail: hc000211@ohio.edu; Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701; Cummings, Marvin

High-speed beam choppers are a crucial part of time-resolved x-ray studies as well as a necessary component to enable elemental contrast in synchrotron x-ray scanning tunneling microscopy (SX-STM). However, many chopper systems are not capable of operation in vacuum, which restricts their application to x-ray studies with high photon energies, where air absorption does not present a significant problem. To overcome this limitation, we present a fully ultra-high vacuum (UHV) compatible chopper system capable of operating at variable chopping frequencies up to 4 kHz. The lightweight aluminum chopper disk is coated with Ti and Au films to provide the required beammore » attenuation for soft and hard x-rays with photon energies up to about 12 keV. The chopper is used for lock-in detection of x-ray enhanced signals in SX-STM.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Hao; Cummings, Marvin L.; Shirato, Nozomi

High-speed beam choppers are a crucial part of time-resolved x-ray studies as well as a necessary component to enable elemental contrast in synchrotron x-ray scanning tunneling microscopy (SX-STM). However, many chopper systems are not capable of operation in vacuum, which restricts their application to x-ray studies with high photon energies, where air absorption does not present a significant problem. To overcome this limitation, we present a fully ultra-high vacuum (UHV) compatible chopper system capable of operating at variable chopping frequencies up to 4 kHz. The lightweight aluminum chopper disk is coated with Ti and Au films to provide the requiredmore » beam attenuation for soft and hard x-rays with photon energies up to about 12 keV. The chopper is used for lock-in detection of x-ray enhanced signals in SX-STM.« less

Quantitative study of sniffer leak rate and pressure drop leak rate of liquid nitrogen panels of SST-1 tokamak

NASA Astrophysics Data System (ADS)

Pathan, F. S.; Khan, Z.; Semwal, P.; Raval, D. C.; Joshi, K. S.; Thankey, P. L.; Dhanani, K. R.

2008-05-01

Steady State Super-conducting (SST-1) Tokamak is in commissioning stage at Institute for Plasma Research. Vacuum chamber of SST-1 Tokamak consists of 1) Vacuum vessel, an ultra high vacuum (UHV) chamber, 2) Cryostat, a high vacuum (HV) chamber. Cryostat encloses the liquid helium cooled super-conducting magnets (TF and PF), which require the thermal radiation protection against room temperature. Liquid nitrogen (LN2) cooled panels are used to provide thermal shield around super-conducting magnets. During operation, LN2 panels will be under pressurized condition and its surrounding (cryostat) will be at high vacuum. Hence, LN2 panels must have very low leak rate. This paper describes an experiment to study the behaviour of the leaks in LN2 panels during sniffer test and pressure drop test using helium gas.

A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

NASA Astrophysics Data System (ADS)

Kim, Tony Tae-Hyoung; Lee, Zhao Chuan; Do, Anh Tuan

2018-01-01

Ultra-low voltage SRAMs are highly sought-after in energy-limited systems such as battery-powered and self-harvested SoCs. However, ultra-low voltage operation diminishes SRAM read bitline (RBL) sensing margin significantly. This paper tackles this issue by presenting a novel 9T cell with data-independent RBL leakage in combination with an RBL boosting technique for enhancing the sensing margin. The proposed technique automatically tracks process, temperature and voltage (PVT) variations for robust sensing margin enhancement. A test chip fabricated in 65 nm CMOS technology shows that the proposed scheme significantly enlarges the sensing margin compared to the conventional bitline sensing scheme. It also achieves the minimum operating voltage of 0.18 V and the minimum energy consumption of 0.92 J/access at 0.4 V. He received 2016 International Low Power Design Contest Award from ISLPED, a best paper award at 2014 and 2011 ISOCC, 2008 AMD/CICC Student Scholarship Award, 2008 Departmental Research Fellowship from Univ. of Minnesota, 2008 DAC/ISSCC Student Design Contest Award, 2008, 2001, and 1999 Samsung Humantec Thesis Award and, 2005 ETRI Journal Paper of the Year Award. He is an author/co-author of +100 journal and conference papers and has 17 US and Korean patents registered. His current research interests include low power and high performance digital, mixed- mode, and memory circuit design, ultra-low voltage circuits and systems design, variation and aging tolerant circuits and systems, and circuit techniques for 3D ICs. He serves as an associate editor of IEEE Transactions on VLSI Systems. He is an IEEE senior member and the Chair of IEEE Solid-State Circuits Society Singapore Chapter. He has served numerous conferences as a committee member.

106 17 Telemetry Standards Chapter 2

DTIC Science & Technology

2017-07-31

high frequency STC space -time code SOQPSK shaped offset quadrature phase shift keying UHF ultra- high frequency US&P United States...and Possessions VCO voltage-controlled oscillator VHF very- high frequency WCS Wireless Communication Service Telemetry Standards, RCC Standard...get interference. a. Telemetry Bands Air and space -to-ground telemetering is allocated in the ultra- high frequency (UHF) bands 1435 to 1535, 2200

Electron Lens Construction for the Integrable Optics Test Accelerator at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGee, Mike; Carlson, Kermit; Nobrega, Lucy

The Integrable Optics Test Accelerator (IOTA) is proposed for operation at Fermilab. The goal of IOTA is to create practical nonlinear accelerator focusing systems with a large frequency spread and stable particle motion. The IOTA is a 40 m circumference, 150 MeV (e-), 2.5 MeV (p⁺) diagnostic test ring. Construction of an electron lens for IOTA is necessary for both electron and proton operation. Components required for the Electron Lens design include; a 0.8 T conventional water-cooled main solenoid, and magnetic bending and focusing elements. The foundation of the design relies on repurposing the Fermilab Tevatron Electron Lens II (TELII)more » gun and collector under ultra-high vacuum (UHV) conditions.« less

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Interfacial and Thin Film Chemistry in Electron Device Fabrication

DTIC Science & Technology

1990-11-20

mounted on our UHV surface analysis system, and J. Forster and D. V. Podlesnik of the IBM General Technology Division. The following discussion...IBM (East Fishkill). The system being built consists of three chambers: one UHV analysis chamber, one UHV reaction chamber and one high pressure...system will be equipped with several surface analysis and cleaning techniques. Fourier transform infrared spectrometry will be used to do attenuated

Performance analysis of microcomputer based differential protection of UHV lines under selective phase switching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhatti, A.A.

1990-04-01

This paper examines the effects of primary and secondary fault quantities as well s of mutual couplings of neighboring circuits on the sensitivity of operation and threshold settings of a microcomputer based differential protection of UHV lines under selective phase switching. Microcomputer based selective phase switching allows the disconnection of minimum number of phases involved in a fault and requires the autoreclosing of these phases immediately after the extinction of secondary arc. During a primary fault a heavy current contribution to the healthy phases tends to cause an unwanted tripping. Faulty phases physically disconnected constitute an isolated fault which beingmore » coupled to the system affects the current and voltage levels of the healthy phases still retained in the system and may cause an unwanted tripping. The microcomputer based differential protection, appears to have poor performance when applied to uncompensated lines employing selective pole switching.« less

Four-probe measurements with a three-probe scanning tunneling microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salomons, Mark; Martins, Bruno V. C.; Zikovsky, Janik

2014-04-15

We present an ultrahigh vacuum (UHV) three-probe scanning tunneling microscope in which each probe is capable of atomic resolution. A UHV JEOL scanning electron microscope aids in the placement of the probes on the sample. The machine also has a field ion microscope to clean, atomically image, and shape the probe tips. The machine uses bare conductive samples and tips with a homebuilt set of pliers for heating and loading. Automated feedback controlled tip-surface contacts allow for electrical stability and reproducibility while also greatly reducing tip and surface damage due to contact formation. The ability to register inter-tip position bymore » imaging of a single surface feature by multiple tips is demonstrated. Four-probe material characterization is achieved by deploying two tips as fixed current probes and the third tip as a movable voltage probe.« less

Final Technical Report for SISGR: Ultrafast Molecular Scale Chemical Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hersam, Mark C.; Guest, Jeffrey R.; Guisinger, Nathan P.

2017-04-10

The Northwestern-Argonne SISGR program utilized newly developed instrumentation and techniques including integrated ultra-high vacuum tip-enhanced Raman spectroscopy/scanning tunneling microscopy (UHV-TERS/STM) and surface-enhanced femtosecond stimulated Raman scattering (SE-FSRS) to advance the spatial and temporal resolution of chemical imaging for the study of photoinduced dynamics of molecules on plasmonically active surfaces. An accompanying theory program addressed modeling of charge transfer processes using constrained density functional theory (DFT) in addition to modeling of SE-FSRS, thereby providing a detailed description of the excited state dynamics. This interdisciplinary and highly collaborative research resulted in 62 publications with ~ 48% of them being co-authored by multiplemore » SISGR team members. A summary of the scientific accomplishments from this SISGR program is provided in this final technical report.« less

Recent developments in novel freezing and thawing technologies applied to foods.

PubMed

Wu, Xiao-Fei; Zhang, Min; Adhikari, Benu; Sun, Jincai

2017-11-22

This article reviews the recent developments in novel freezing and thawing technologies applied to foods. These novel technologies improve the quality of frozen and thawed foods and are energy efficient. The novel technologies applied to freezing include pulsed electric field pre-treatment, ultra-low temperature, ultra-rapid freezing, ultra-high pressure and ultrasound. The novel technologies applied to thawing include ultra-high pressure, ultrasound, high voltage electrostatic field (HVEF), and radio frequency. Ultra-low temperature and ultra-rapid freezing promote the formation and uniform distribution of small ice crystals throughout frozen foods. Ultra-high pressure and ultrasound assisted freezing are non-thermal methods and shorten the freezing time and improve product quality. Ultra-high pressure and HVEF thawing generate high heat transfer rates and accelerate the thawing process. Ultrasound and radio frequency thawing can facilitate thawing process by volumetrically generating heat within frozen foods. It is anticipated that these novel technologies will be increasingly used in food industries in the future.

Highly precise and compact ultrahigh vacuum rotary feedthrough.

PubMed

Aiura, Y; Kitano, K

2012-03-01

The precision and rigidity of compact ultrahigh vacuum (UHV) rotary feedthroughs were substantially improved by preparing and installing an optimal crossed roller bearing with mounting holes. Since there are mounting holes on both the outer and inner races, the bearing can be mounted directly to rotary and stationary stages without any fixing plates and housing. As a result, it is possible to increase the thickness of the bearing or the size of the rolling elements in the bearing without increasing the distance between the rotating and fixing International Conflat flanges of the UHV rotary feedthrough. Larger rolling elements enhance the rigidity of the UHV rotary feedthrough. Moreover, owing to the structure having integrated inner and outer races and mounting holes, the performance is almost entirely unaffected by the installation of the bearing, allowing for a precise optical encoder to be installed in the compact UHV rotary feedthrough. Using position feedback via a worm gear system driven by a stepper motor and a precise rotary encoder, the actual angle of the compact UHV rotary feedthrough can be controlled with extremely high precision.

Highly precise and compact ultrahigh vacuum rotary feedthrough

NASA Astrophysics Data System (ADS)

Aiura, Y.; Kitano, K.

2012-03-01

The precision and rigidity of compact ultrahigh vacuum (UHV) rotary feedthroughs were substantially improved by preparing and installing an optimal crossed roller bearing with mounting holes. Since there are mounting holes on both the outer and inner races, the bearing can be mounted directly to rotary and stationary stages without any fixing plates and housing. As a result, it is possible to increase the thickness of the bearing or the size of the rolling elements in the bearing without increasing the distance between the rotating and fixing International Conflat flanges of the UHV rotary feedthrough. Larger rolling elements enhance the rigidity of the UHV rotary feedthrough. Moreover, owing to the structure having integrated inner and outer races and mounting holes, the performance is almost entirely unaffected by the installation of the bearing, allowing for a precise optical encoder to be installed in the compact UHV rotary feedthrough. Using position feedback via a worm gear system driven by a stepper motor and a precise rotary encoder, the actual angle of the compact UHV rotary feedthrough can be controlled with extremely high precision.

Use of tapered Pyrex capillary tubes to increase the mechanical stability of multiwall carbon nanotubes field emitters

NASA Astrophysics Data System (ADS)

Mousa, M. S.; Bani Ali, E. S.; Hagmann, M. J.

2018-02-01

In this study, NanocylTM NC 7000 Thin Multiwall Carbon Nanotubes (MWCNTs) were used with a high aspect ratio (>150) made by the process of catalytic chemical vapor deposition (CCVD). The field emitter tips were prepared by inserting these MWCT into fine glass capillary tubes that were pulled at high temperatures and then cut. Measurements were carried out under ultra-high vacuum (UHV) conditions with a base pressure of 10-9 mbar. The data show the effects of initial conditioning of MWCNT and hysteresis. Compression of the MWCNT by the capillary tubes appears to provide adequate mechanical support without requiring the use of a low-melting point electrically-conductive binder as has been used previously. Emission currents in excess of 1 μA were obtained so this technique shows promise as a reliable, stable, powerful electron source.

New experimental perspectives for soft x-ray absorption spectroscopies at ultra-low temperatures below 50 mK and in high magnetic fields up to 7 T

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beeck, T., E-mail: torben.beeck@desy.de; Baev, I.; Gieschen, S.

2016-04-15

A new ultra-low temperature experiment including a superconducting vector magnet has been developed for soft x-ray absorption spectroscopy experiments at third generation synchrotron light sources. The sample is cooled below 50 mK by a cryogen free {sup 3}He-{sup 4}He dilution refrigerator. At the same time, magnetic fields of up to ±7 T in the horizontal direction and ±0.5 T in the vertical direction can be applied by a superconducting vector magnet. The setup allows to study ex situ and in situ prepared samples, offered by an attached UHV preparation chamber with load lock. The transfer of the prepared samples betweenmore » the preparation section and the dilution refrigerator is carried out under cryogenic temperatures. First commissioning studies have been carried out at the Variable Polarization XUV Beamline P04 at PETRA III and the influence of the incident photon beam to the sample temperature has been studied.« less

Response to 'Comment on 'Controllable local modification of fractured Nb-doped SrTiO{sub 3} surfaces' [Appl. Phys. Lett. 98, 256102 (2011)'.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chien, T. Y.; Santos, T. S.; Bode, M.

2011-06-20

In their comment, Chen et al. try to argue that the experimentally observed controllable voltage-induced surface modification, which was attributed to a local electric field-induced atom transfer from the surface to the tip, is rather caused by either an oxidation process and/or a resistance change. In this response, we will show that we can rule out these two effects in our experiment. The statements by Chen et al. are based on two arguments: (1) the tip modification after transferring an adatom should alter the dI/dV contrast, which was not seen in our experiments and (2) the vacuum conditions in ourmore » experiment are similar to earlier reports on resistance switching. First, Chen et al. discuss that the adsorption on the tip should alter the topographic contrast, as many papers have reported. In fact, in our experiments we frequently observed tip modifications at high bias voltage. These typically result in slight changes in scanning tunneling spectroscopy data [see, for example, the spectra in Fig. 3(b) in Ref. 4 and Fig. 2(d) of Ref. 5] but only weakly affected the topographic contrast. Second, Chen et al. claim that oxidation is another possible mechanism to explain our experimental observations. To support this claim, they compare our results to an earlier publication showing resistance switching. In fact, the resistance switching mechanism is related to oxygen vacancy migration or local surface oxidation. The mechanism of oxygen vacancy migration requires a 'forming' process with a threshold current in the order of microampere or even milliampere. In our experimental setup, however, we used tunneling currents in the order of 50 pA. Even during surface modification, which was performed at open feedback loop conditions with voltage pulse of up to 3 or -5 V, the maximum transient current did not exceed a few nanoampere. Therefore, we can safely exclude oxygen vacancy migration as a potential mechanism for the observed surface modification. As a second potential mechanism Chen et al. mention a local surface oxidation process. However, the total pressure at high-vacuum conditions used in experiments, where resistance switching was observed (10{sup -7} torr in Ref. 3) is three order magnitude higher than in our experiment performed under ultrahigh vacuum (UHV) conditions (below 10{sup -10} torr). Furthermore, mass spectra measured with a residual gas analyzer show that the main residue gas in our UHV system is hydrogen ({approx} 90%). Water, oxygen, and other oxygen-related gases are negligible with a partial pressure in the order of 10{sup -12} torr range or lower. Therefore, we can also exclude that local oxidation with reactants from the residual gas causes the observed modifications. In addition, in our experiment, the refilling of the modified areas at negative bias could not be observed with fresh tip, even for bias voltages as high as -10 V. In short, the mechanism for the modification on the UHV in situ fractured Nb:SrTiO{sub 3} (Nb-doped Strontium titanate) surfaces with scanning tunneling microscope (STM) tip is different from the mechanisms such as local surface oxidation or filament formation, used to explain the largecurrent induced resistance switching works.« less

Small-volume, ultrahigh-vacuum-compatible high-pressure reaction cell for combined kinetic and in situ IR spectroscopic measurements on planar model catalysts

NASA Astrophysics Data System (ADS)

Zhao, Z.; Diemant, T.; Häring, T.; Rauscher, H.; Behm, R. J.

2005-12-01

We describe the design and performance of a high-pressure reaction cell for simultaneous kinetic and in situ infrared reflection (IR) spectroscopic measurements on model catalysts at elevated pressures, between 10-3 and 103mbars, which can be operated both as batch reactor and as flow reactor with defined gas flow. The cell is attached to an ultrahigh-vacuum (UHV) system, which is used for sample preparation and also contains facilities for sample characterization. Specific for this design is the combination of a small cell volume, which allows kinetic measurements with high sensitivity under batch or continuous flow conditions, the complete isolation of the cell from the UHV part during UHV measurements, continuous temperature control during both UHV and high-pressure operation, and rapid transfer between UHV and high-pressure stage. Gas dosing is performed by a designed gas-handling system, which allows operation as flow reactor with calibrated gas flows at adjustable pressures. To study the kinetics of reactions on the model catalysts, a quadrupole mass spectrometer is connected to the high-pressure cell. IR measurements are possible in situ by polarization-modulation infrared reflection-absorption spectroscopy, which also allows measurements at elevated pressures. The performance of the setup is demonstrated by test measurements on the kinetics for CO oxidation and the CO adsorption on a Au /TiO2/Ru(0001) model catalyst film at 1-50 mbar total pressure.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

Metal modified tungsten carbide (WC) for catalytic and electrocatalytic applications

NASA Astrophysics Data System (ADS)

Mellinger, Zachary J.

One of the major challenges in the commercialization of proton exchange membrane fuel cells (PEMFC) is the cost, and low CO tolerance of the anode electrocatalyst material. The anode typically requires a high loading of precious metal electrocatalyst (Pt or Pt--Ru) to obtain a useful amount of electrical energy from the electrooxidation of methanol (CH3OH) or ethanol (C2H5OH). The complete electro--oxidation of methanol or ethanol on these catalysts produces strongly adsorbed CO on the surface, which reduces the activity of the Pt or Pt--Ru catalysts. Another major disadvantage of these electrocatalyst components is the scarcity and consequently high price of both Pt and Ru. Tungsten monocarbide (WC) has shown similar catalytic properties to Pt, leading to the utilization of WC and metal modified WC as replacements to Pt and Pt--Ru. In this thesis we investigated WC and Pt--modified WC as a potentially more CO--tolerant electrocatalysts as compared to pure Pt. These catalysts would reduce or remove the high loading of Pt used industrially. The binding energy of CO, estimated using temperature programmed desorption, is weaker on WC and Pt/WC than on Pt, suggesting that it should be easier to oxidize CO on WC and Pt/WC. This hypothesis was verified using cyclic voltammetry to compare the electro--oxidation of CO on WC, Pt/WC, and Pt supported on carbon substrates, which showed a lower voltage for the onset of oxidation of CO on WC and Pt/WC than on Pt. After observing these improved properties on the Pt/WC catalysts, we decided to expand our studies to investigate Pd--modified WC as Pd is less expensive than Pt and has shown more ideal properties for alcohol electrocatalysis in alkaline media. Pd/WC showed a lower binding energy of CO than both its parent metal Pd as well as Pt. Then, density functional theory (DFT) calculations were performed to determine how the presence of Pd affected the bonding of methanol and ethanol on the WC surface. The DFT studies showed that the binding energies for methanol and methoxy as well as ethanol and ethoxy on one monolayer (ML) Pd/WC are more similar to Pd than to WC. This predicts that the ML Pd/WC surface should have catalytic properties more similar to Pd than to WC. Ultra--high vacuum (UHV) experiments were then performed to determine the reaction products and pathways for methanol and ethanol on Pd(111), WC, and Pd/WC surfaces. These studies showed that the WC surface was very active toward the O--H bond cleavage to produce a methoxy intermediate, although WC was also undesirable because it was active for C--O bond scission and less active for the C--H bond scission. Adding Pd on WC enhanced the scission of the C--H bonds of methoxy while removing the C--O bond scission reaction pathway, suggesting a synergistic effect of using Pd/WC as electrocatalysts for methanol and ethanol decomposition. Dissociation of water, which is important for CO tolerance, was also investigated using UHV techniques with the conclusion that both the WC and Pd/WC surfaces dissociated water. The predictions from UHV studies was verified in electrochemical experiments using cyclic voltammetry (CV) and chronoamperometry (CA) measurements of electro--oxidation of methanol and ethanol in an alkaline environment. These experiments showed that Pd/WC was electrochemically active towards methanol and ethanol decomposition and has greater electrochemical stability over time than pure Pd, potentially due to higher CO tolerance for Pd/WC.

Development of a quadrupole-based Secondary-Ion Mass Spectrometry (SIMS) system at Lewis Research Center

NASA Technical Reports Server (NTRS)

Vargas-Aburto, Carlos; Aron, Paul R.; Liff, Dale R.

1990-01-01

The design, construction, and initial use of an ion microprobe to carry out secondary ion mass spectrometry (SIMS) of solid samples is reported. The system is composed of a differentially pumped custom-made UHV (Ultra High Vacuum) chamber, a quadrupole mass spectrometer and a telefocus A-DIDA ion gun with the capability of producing beams of Cesium, as well as inert and reactive gases. The computer control and acquisition of the data were designed and implemented using a personal computer with plug-in boards, and external circuitry built as required to suit the system needs. The software is being developed by using a FORTH-like language. Initial tests aimed at characterizing the system, as well as preliminary surface and depth-profiling studies are presently underway.

Elementary Chemical Reactions in Surface Photocatalysis

NASA Astrophysics Data System (ADS)

Guo, Qing; Zhou, Chuanyao; Ma, Zhibo; Ren, Zefeng; Fan, Hongjun; Yang, Xueming

2018-04-01

Photocatalytic hydrogen evolution and organic degradation on oxide materials have been extensively investigated in the last two decades. Great efforts have been dedicated to the study of photocatalytic reaction mechanisms of a variety of molecules on TiO2 surfaces by using surface science methods under ultra-high vacuum (UHV) conditions, providing fundamental understanding of surface chemical reactions in photocatalysis. In this review, we summarize the recent progress in the study of photocatalysis of several important species (water, methanol, and aldehydes) on different TiO2 surfaces. The results of these studies have provided us deep insights into the elementary processes of surface photocatalysis and stimulated a new frontier of research in this area. Based on the results of these studies, a new dynamics-based photocatalysis model is also discussed.

Ambient atomic resolution atomic force microscopy with qPlus sensors: Part 1.

PubMed

Wastl, Daniel S

2017-01-01

Atomic force microscopy (AFM) is an enormous tool to observe nature in highest resolution and understand fundamental processes like friction and tribology on the nanoscale. Atomic resolution in highest quality was possible only in well-controlled environments like ultrahigh vacuum (UHV) or controlled buffer environments (liquid conditions) and more specified for long-term high-resolution analysis at low temperatures (∼4 K) in UHV where drift is nearly completely absent. Atomic resolution in these environments is possible and is widely used. However, in uncontrolled environments like air, with all its pollutants and aerosols, unspecified thin liquid films as thin as a single molecular water-layer of 200 pm or thicker condensation films with thicknesses up to hundred nanometer, have been a problem for highest resolution since the invention of the AFM. The goal of true atomic resolution on hydrophilic as well as hydrophobic samples was reached recently. In this manuscript we want to review the concept of ambient AFM with atomic resolution. The reader will be introduced to the phenomenology in ambient conditions and the problems will be explained and analyzed while a method for scan parameter optimization will be explained. Recently developed concepts and techniques how to reach atomic resolution in air and ultra-thin liquid films will be shown and explained in detail, using several examples. Microsc. Res. Tech. 80:50-65, 2017. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

NOVEL CHAMBER DESIGN FOR AN IN-VACUUM CRYO-COOLED MINI-GAP UNDULATOR.

DOE Office of Scientific and Technical Information (OSTI.GOV)

HU, J.-P.; FOERSTER, C.L.; SKARITKA, J.R.

2006-05-24

A stainless steel, Ultra-High Vacuum (UHV) chamber, featuring a large vertical rectangular port (53''W by 16''H), has been fabricated to house the one-meter magnet assembly of a newly installed undulator insertion device for beamline X-25 at the National Synchrotron Light Source. To achieve UHV, the new chamber is equipped with a differential ion pump, NEG pump, nude ion gauge, residual gas analyzer, and an all metal roughing valve. Temperature of the magnet assembly is maintained below 90 C during vacuum bake. The large rectangular port cover is sealed to the main flange of the chamber using a one-piece flat aluminummore » gasket and special sealing surfaces developed exclusively by Nor-Cal Products, Inc. The large flange provides easy access to the gap of the installed magnet girders for in situ magnetic measurements and shimming. Special window ports were designed into the cover and chamber for manipulation of optical micrometers external to the chamber to provide precise measurements of the in-vacuum magnet gap. The vacuum chamber assembly features independently vacuum-isolated feedthroughs that can be used for either water-or-cryogenic refrigeration-cooling of the monolithic magnet girders. This would allow for cryogenic-cooled permanent magnet operation and has been successfully tested within temperature range of +100 C to -150 C. Details of the undulator assembly for beamline X-25 is described in the paper.« less

Ultra-short ion and neutron pulse production

DOEpatents

Leung, Ka-Ngo; Barletta, William A.; Kwan, Joe W.

2006-01-10

An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 .mu.s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.

Gas phase synthesis of core-shell Fe@FeO x magnetic nanoparticles into fluids

NASA Astrophysics Data System (ADS)

Aktas, Sitki; Thornton, Stuart C.; Binns, Chris; Denby, Phil

2016-12-01

Sorbitol, short chain molecules, have been used to stabilise of Fe@FeO x nanoparticles produced in the gas phase under the ultra-high vacuum (UHV) conditions. The sorbitol coated Fe@FeO x nanoparticles produced by our method have a narrow size distribution with a hydrodynamic diameter of 35 nm after NaOH is added to the solution. Magnetisation measurement shows that the magnetic nanoparticles are superparamagnetic at 100 K and demonstrate hysteresis at 5 K with an anisotropy constant of 5.31 × 104 J/m3 (similar to bulk iron). Also, it is shown that sorbitol is only suitable for stabilising the Fe@FeO x suspensions, and it does not prevent further oxidation of the metallic Fe core. According to MRI measurement, the nanoparticles have a high transverse relaxation rate of 425 mM-1 s-1.

Reactions of NO2 with BaO/Pt(111) Model Catalysts: The Effects of BaO Film Thickness and NO2 Pressure on the Formation of Ba(NOx)2 Species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mudiyanselage, Kumudu; Yi, Cheol-Woo; Szanyi, Janos

2011-05-31

The adsorption and reaction of NO2 on BaO (<1, ~3, and >20 monolayer equivalent (MLE))/Pt(111) model systems were studied with temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), and infrared reflection absorption spectroscopy (IRAS) under ultra-high vacuum (UHV) as well as elevated pressure conditions. NO2 reacts with sub-monolayer BaO (<1 MLE) to form nitrites only, whereas the reaction of NO2 with BaO (~3 MLE)/Pt(111) produces mainly nitrites and a small amount of nitrates under UHV conditions (PNO2 ~ 1.0 × 10-9 Torr) at 300 K. In contrast, a thick BaO(>20 MLE) layer on Pt(111) reacts with NO2 to form nitrite-nitratemore » ion pairs under the same conditions. At elevated NO2 pressures (≥ 1.0 × 10-5 Torr), however, BaO layers at all these three coverages convert to amorphous barium nitrates at 300 K. Upon annealing to 500 K, these amorphous barium nitrate layers transform into crystalline phases. The thermal decomposition of the thus-formed Ba(NOx)2 species is also influenced by the coverage of BaO on the Pt(111) substrate: at low BaO coverages, these species decompose at significantly lower temperatures in comparison with those formed on thick BaO films due to the presence of Ba(NOx)2/Pt interface where the decomposition can proceed at lower temperatures. However, the thermal decomposition of the thick Ba(NO3)2 films follows that of bulk nitrates. Results obtained from these BaO/Pt(111) model systems under UHV and elevated pressure conditions clearly demonstrate that both the BaO film thickness and the applied NO2 pressure are critical in the Ba(NOx)2 formation and subsequent thermal decomposition processes.« less

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

NASA Astrophysics Data System (ADS)

Takahashi, Hiroshi; Hashizume, Tamotsu; Hasegawa, Hideki

1999-02-01

In order to understand and optimize a novel oxide-free InP passivation process using a silicon surface quantum well, a detailed in situ X-ray photoelectron spectroscopy (XPS) and ultrahigh vacuum (UHV) contactless capacitance-voltage (C-V) study of the interface was carried out. Calculation of quantum levels in the silicon quantum well was performed on the basis of the band lineup of the strained Si3N4/Si/InP interface and the result indicated that the interface should become free of gap states when the silicon layer thickness is below 5 Å. Experimentally, such a delicate Si3N4/Si/InP structure was realized by partial nitridation of a molecular beam epitaxially (MBE) grown pseudomorphic silicon layer using an electron cyclotron resonance (ECR) N2 plasma. The progress of nitridation was investigated in detail by angle-resolved XPS. A newly developed UHV contactless C-V method realized in situ characterization of surface electronic properties of InP at each processing step for passivation. It was found that the interface state density decreased substantially into the 1010 cm-2 eV-1 range by optimizing the nitridation process of the silicon layer. It was concluded that both the surface bond termination and state removal by quantum confinement are responsible for the NSS reduction.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

PubMed

Kumar, Ashish; Arafin, Shamsul; Amann, Markus Christian; Singh, Rajendra

2013-11-15

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

A Compact, High-Flux Cold Atom Beam Source

NASA Technical Reports Server (NTRS)

Kellogg, James R.; Kohel, James M.; Thompson, Robert J.; Aveline, David C.; Yu, Nan; Schlippert, Dennis

2012-01-01

The performance of cold atom experiments relying on three-dimensional magneto-optical trap techniques can be greatly enhanced by employing a highflux cold atom beam to obtain high atom loading rates while maintaining low background pressures in the UHV MOT (ultra-high vacuum magneto-optical trap) regions. Several techniques exist for generating slow beams of cold atoms. However, one of the technically simplest approaches is a two-dimensional (2D) MOT. Such an atom source typically employs at least two orthogonal trapping beams, plus an additional longitudinal "push" beam to yield maximum atomic flux. A 2D atom source was created with angled trapping collimators that not only traps atoms in two orthogonal directions, but also provides a longitudinal pushing component that eliminates the need for an additional push beam. This development reduces the overall package size, which in turn, makes the 2D trap simpler, and requires less total optical power. The atom source is more compact than a previously published effort, and has greater than an order of magnitude improved loading performance.

Mn-doped Ge self-assembled quantum dots via dewetting of thin films

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Bandyopadhyay, Anup; Kim, Sung Kyu; Karaman, Ibrahim; Lee, Jeong Yong

2017-03-01

In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

A compact ultra-clean system for deploying radioactive sources inside the KamLAND detector

NASA Astrophysics Data System (ADS)

Banks, T. I.; Freedman, S. J.; Wallig, J.; Ybarrolaza, N.; Gando, A.; Gando, Y.; Ikeda, H.; Inoue, K.; Kishimoto, Y.; Koga, M.; Mitsui, T.; Nakamura, K.; Shimizu, I.; Shirai, J.; Suzuki, A.; Takemoto, Y.; Tamae, K.; Ueshima, K.; Watanabe, H.; Xu, B. D.; Yoshida, H.; Yoshida, S.; Kozlov, A.; Grant, C.; Keefer, G.; Piepke, A.; Bloxham, T.; Fujikawa, B. K.; Han, K.; Ichimura, K.; Murayama, H.; O`Donnell, T.; Steiner, H. M.; Winslow, L. A.; Dwyer, D. A.; McKeown, R. D.; Zhang, C.; Berger, B. E.; Lane, C. E.; Maricic, J.; Miletic, T.; Batygov, M.; Learned, J. G.; Matsuno, S.; Sakai, M.; Horton-Smith, G. A.; Downum, K. E.; Gratta, G.; Efremenko, Y.; Perevozchikov, O.; Karwowski, H. J.; Markoff, D. M.; Tornow, W.; Heeger, K. M.; Detwiler, J. A.; Enomoto, S.; Decowski, M. P.

2015-01-01

We describe a compact, ultra-clean device used to deploy radioactive sources along the vertical axis of the KamLAND liquid-scintillator neutrino detector for purposes of calibration. The device worked by paying out and reeling in precise lengths of a hanging, small-gauge wire rope (cable); an assortment of interchangeable radioactive sources could be attached to a weight at the end of the cable. All components exposed to the radiopure liquid scintillator were made of chemically compatible UHV-cleaned materials, primarily stainless steel, in order to avoid contaminating or degrading the scintillator. To prevent radon intrusion, the apparatus was enclosed in a hermetically sealed housing inside a glove box, and both volumes were regularly flushed with purified nitrogen gas. An infrared camera attached to the side of the housing permitted real-time visual monitoring of the cable's motion, and the system was controlled via a graphical user interface.

Dual analyzer system for surface analysis dedicated for angle-resolved photoelectron spectroscopy at liquid surfaces and interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niedermaier, Inga; Kolbeck, Claudia; Steinrück, Hans-Peter

The investigation of liquid surfaces and interfaces with the powerful toolbox of ultra-high vacuum (UHV)-based surface science techniques generally has to overcome the issue of liquid evaporation within the vacuum system. In the last decade, however, new classes of liquids with negligible vapor pressure at room temperature—in particular, ionic liquids (ILs)—have emerged for surface science studies. It has been demonstrated that particularly angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) allows for investigating phenomena that occur at gas-liquid and liquid-solid interfaces on the molecular level. The results are not only relevant for IL systems but also for liquids in general. In all ofmore » these previous ARXPS studies, the sample holder had to be tilted in order to change the polar detection angle of emitted photoelectrons, which restricted the liquid systems to very thin viscous IL films coating a flat solid support. We now report on the concept and realization of a new and unique laboratory “Dual Analyzer System for Surface Analysis (DASSA)” which enables fast ARXPS, UV photoelectron spectroscopy, imaging XPS, and low-energy ion scattering at the horizontal surface plane of macroscopically thick non-volatile liquid samples. It comprises a UHV chamber equipped with two electron analyzers mounted for simultaneous measurements in 0° and 80° emission relative to the surface normal. The performance of DASSA on a first macroscopic liquid system will be demonstrated.« less

Recent approaches for bridging the pressure gap in photoelectron microspectroscopy

PubMed Central

Kolmakov, Andrei; Gregoratti, Luca; Kiskinova, Maya; Günther, Sebastian

2016-01-01

Ambient-pressure photoelectron spectroscopy (APPES) and microscopy are at the frontier of modern chemical analysis at liquid-gas, solid-liquid and solid-gas interfaces, bridging science and engineering of functional materials. Complementing the current state-of-the art of the instruments, we survey in this short review several alternative APPES approaches, developed recently in the scanning photoelectron microscope (SPEM) at the Elettra laboratory. In particular, we report on experimental setups for dynamic near-ambient pressure environment, using pulsed-gas injection in the vicinity of samples or reaction cells with very small apertures, allowing for experiments without introducing additional differential pumping stages. The major part of the review is dedicated to the construction and performance of novel environmental cells using ultrathin electron-transparent but molecularly impermeable membranes to isolate the gas or liquid ambient from the electron detector operating in ultra-high vacuum (UHV). We demonstrate that two dimensional materials, such as graphene and derivatives, are mechanically robust to withstand atmospheric - UHV pressure differences and are sufficiently transparent for the photoelectrons emitted from samples immersed in the liquid or gaseous media. There are many unique opportunities for APPES using X-rays over a wide energy range. We show representative results that illustrate the potential of these ‘ambient-pressure’ approaches. Combined with the ca 100 nm lateral resolution of SPEM, they can overcome the pressure gap challenges and address the evolution of chemical composition and electronic structure at surface and interfaces under realistic operation conditions with unprecedented lateral and spectral resolution. PMID:28008215

The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001)

NASA Astrophysics Data System (ADS)

Bermudez, V. M.

2013-07-01

Atomically clean surfaces of n-type GaSb (001) have been prepared by a combination of ex-situ wet-chemical treatment in HCl and in-situ annealing in a flux of H atoms in ultra-high vacuum (UHV). The surfaces are exposed to "excited" O2 and studied using primarily x-ray photoelectron spectroscopy. Low O2 exposures, up to ˜3 × 103 Langmuirs (L), result in a partial passivation of electrically active defects as shown by a decrease in upward band bending. Adsorption of O2 in this exposure range appears to form mainly Ga+1 sites, with little or no indication of Ga+3, and saturates at an O coverage of ˜0.2-0.3 monolayers. For exposures of ˜104 L or higher, oxidation occurs through insertion into Ga-Sb bonds as indicated by the onset of Ga+3 as well as of Sb+4 and/or Sb+5 together with the appearance of an O 1s feature. Defects resulting from this process cause a reversal of the band-bending change seen for smaller exposures. Data obtained for the composition of a native oxide formed in situ in UHV are compared with those for a "practical" surface produced by processing under ambient conditions. These results suggest an optimum procedure for forming a Ga2O3 layer prior to the growth by atomic layer deposition of an Al2O3 layer.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode.

PubMed

Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, Christian

2018-02-27

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

NASA Astrophysics Data System (ADS)

Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

2018-03-01

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: a modular vacuum ultraviolet source.

PubMed

Roberts, F Sloan; Anderson, Scott L

2013-12-01

The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a "soft" photoionization source for gas-phase mass spectrometry.

Ultra high vacuum broad band high power microwave window

DOEpatents

Nguyen-Tuong, V.; Dylla, H.F. III

1997-11-04

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost. 5 figs.

Ultra high vacuum broad band high power microwave window

DOEpatents

Nguyen-Tuong, Viet; Dylla, III, Henry Frederick

1997-01-01

An improved high vacuum microwave window has been developed that utilizes high density polyethylene coated on two sides with SiOx, SiNx, or a combination of the two. The resultant low dielectric and low loss tangent window creates a low outgassing, low permeation seal through which broad band, high power microwave energy may be passed. No matching device is necessary and the sealing technique is simple. The features of the window are broad band transmission, ultra-high vacuum compatibility with a simple sealing technique, low voltage standing wave ratio, high power transmission and low cost.

Substrate effects in high gain, low operating voltage SnSe2 photoconductor

NASA Astrophysics Data System (ADS)

Krishna, Murali; Kallatt, Sangeeth; Majumdar, Kausik

2018-01-01

High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently drawn a lot of attention from researchers in this regard. However, in general, a large operating voltage is required to obtain large responsivity in these devices. In addition, the characteristics are often confounded by substrate induced trap effects. Here we report multi-layer SnSe2 based photoconductive devices using two different structures: (1) SiO2 substrate supported inter-digitated electrode (IDE), and (2) suspended channel. The IDE device exhibits a responsivity of ≈ {10}3 A W-1 and ≈ 8.66× {10}4 A W-1 at operating voltages of 1 mV and 100 mV, respectively—a superior low voltage performance over existing literature on planar 2D structures. However, the responsivity reduces by more than two orders of magnitude, while the transient response improves for the suspended device—providing insights into the critical role played by the channel-substrate interface in the gain mechanism. The results, on one hand, are promising for highly sensitive photoconductive applications consuming ultra-low power, and on the other hand, show a generic methodology that could be applied to other layered material based photoconductive devices as well for extracting the intrinsic behavior.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Towards 1D nanolines on a monolayered supramolecular network adsorbed on a silicon surface.

PubMed

Makoudi, Younes; Beyer, Matthieu; Lamare, Simon; Jeannoutot, Judicael; Palmino, Frank; Chérioux, Frédéric

2016-06-16

The growth of 3D extended periodic networks made up of π-conjugated molecules on semi-conductor surfaces is of interest for the integration of nano-components in the future generations of smart devices. In the work presented in this article, we successfully achieved the formation of bilayered networks on a silicon surface including 1D-isolated nanolines in the second layer. Firstly, we observed the formation of a 2D large-scale supramolecular network in the plane of a silicon surface through the deposition of tailored molecules. Then using the same molecules, a second-layer, based on 1D nanolines, grew above the first layer, thanks to a template effect. Mono- or bi-layered networks were found to be stable from 100 K up to room temperature. These networks were investigated by scanning tunnel microscopy imaging under an ultra-high vacuum (UHV-STM).

Variation of relative intensities between surface and bulk plasmon losses due to crystal orientations for aluminium in low energy electron reflection loss spectroscopy

NASA Astrophysics Data System (ADS)

Ichinokawa, T.; Le Gressus, C.; Mogami, A.; Pellerin, F.; Massignon, D.

The contrast change of secondary electron images due to the crystal orientations is observed by the ultra high vacuum scanning electron microscope (UHV-SEM) for crystal grains of clean surface of polycrystalline Al in the primary energy Ep of 200 eV to 5 KeV. The low energy electron loss spectra are measured by the cylindrical mirror analyzer. The relative intensity ratio between surface and bulk plasmon loss spectra was dependent on the crystal orientations. The SEM images taken by the surface and bulk plasmon signals at Ep = 230 eV show the inverse contrast depending on the grains. The inversion of the relative intensities between the surface and bulk plasmon losses is explained qualitatively by taking into account of variation of the penetration depth of the incident beam caused by the electron channeling.

Variation of relative intensities between surface and bulk plasmon losses due to crystal orientations for aluminium in low energy electron reflection loss spectroscopy

NASA Astrophysics Data System (ADS)

Ichinokawa, T.; Le Gressus, C.; Mogami, A.; Pellerin, F.; Massignon, D.

1981-10-01

The contrast change of secondary electron images due to the crystal orientations is observed by the ultra high vacuum scanning electron microscope (UHV-SEM) for crystal grains of clean surface of polycrystalline Al in the primary energy Ep of 200 eV to 5 keV. The low energy electron loss spectra are measured by the cylindrical mirror analyzer. The relative intensity ratio between surface and bulk plasmon loss spectra was dependent on the crystal orientations. The SEM images taken by the surface and bulk plasmon signals at Ep = 230 eV show the inverse contrast depending on the grains. The inversion of the relative intensities between the surface and bulk plasmon losses is explained qualitatively by taking into account of variation of the penetration depth of the incident beam caused by the electron channeling.

Kinetics of gas phase formic acid decomposition on platinum single crystal and polycrystalline surfaces

NASA Astrophysics Data System (ADS)

Detwiler, Michael D.; Milligan, Cory A.; Zemlyanov, Dmitry Y.; Delgass, W. Nicholas; Ribeiro, Fabio H.

2016-06-01

Formic acid dehydrogenation turnover rates (TORs) were measured on Pt(111), Pt(100), and polycrystalline Pt foil surfaces at a total pressure of 800 Torr between 413 and 513 K in a batch reactor connected to an ultra-high vacuum (UHV) system. The TORs, apparent activation energies, and reaction orders are not sensitive to the structure of the Pt surface, within the precision of the measurements. CO introduced into the batch reactor depressed the formic acid dehydrogenation TOR and increased the reaction's apparent activation energies on Pt(111) and Pt(100), consistent with behavior predicted by the Temkin equation. Two reaction mechanisms were explored which explain the formic acid decomposition mechanism on Pt, both of which include dissociative adsorption of formic acid, rate limiting formate decomposition, and quasi-equilibrated hydrogen recombination and CO adsorption. No evidence was found that catalytic supports used in previous studies altered the reaction kinetics or mechanism.

Alkali layered compounds interfaces for energy conversion and energy storage

NASA Technical Reports Server (NTRS)

Papageorgopoulos, Chris A.

1996-01-01

During year one a new ultra-high vacuum, an Ar(+) ion sputterer, a low energy electron diffraction (LEED) system, an Auger electron spectrometer (AES), a work function measurement device with a Kelvin probe, and related accessories were used. The study found a focus in the adsorption of chalcogenides on Si and III-V compound semiconductors. In the second year, a scanning tunneling microscope was obtained along with a quadrapole mass spectrometer, power supplies, a computer, a chart recorder, etc. We started the systematic study on the adsorption of chalcogenides on the compound semiconductor surfaces. The third year saw the mounting of the scanning tunneling microscope (STM) on the existing UHV system. The investigation continued with the adsorption of Cs (alkali) on S-covered Si(100)2x1 surfaces. Then the adsorption of S on Cs-covered Si(100) surfaces was studied.

Activation and evaluation of GaN photocathodes

NASA Astrophysics Data System (ADS)

Qian, Yunsheng; Chang, Benkang; Qiao, Jiangliang; Zhang, Yijun; Fu, Rongguo; Qiu, Yafeng

2009-09-01

Gallium Nitride (GaN) photocathodes are potentially attractive as UV detective materials and electron sources. Based on the activation and evaluation system for GaAs photocathode, which consists of ultra-high vacuum (UHV) activation chamber, multi-information measurement system, X-ray photoelectron spectroscopy (XPS), and ultraviolet ray photoelectron spectroscopy (UPS), the control and measurement system for the activation of UV photocathodes was developed. The developed system, which consists of Xenon lamp, monochromator with scanner, signal-processing module, power control unit of Cs and O source, A/D adapter, digital I/O card, computer and software, can control the activation of GaN photocathodes and measure on-line the spectral response curves of GaN photocathodes. GaN materials on sapphire substrate were grown by Metal-Organic Chemical Vapor Deposition (MOCVD) with p-type Mg doping. The GaN materials were activated by Cs-O. The spectral response and quantum efficiency (QE) were measured and calculated. The experiment results are discussed.

Calibration of ultra-high frequency (UHF) partial discharge sensors using FDTD method

NASA Astrophysics Data System (ADS)

Ishak, Asnor Mazuan; Ishak, Mohd Taufiq

2018-02-01

Ultra-high frequency (UHF) partial discharge sensors are widely used for conditioning monitoring and defect location in insulation system of high voltage equipment. Designing sensors for specific applications often requires an iterative process of manufacturing, testing and mechanical modifications. This paper demonstrates the use of finite-difference time-domain (FDTD) technique as a tool to predict the frequency response of UHF PD sensors. Using this approach, the design process can be simplified and parametric studies can be conducted in order to assess the influence of component dimensions and material properties on the sensor response. The modelling approach is validated using gigahertz transverse electromagnetic (GTEM) calibration system. The use of a transient excitation source is particularly suitable for modeling using FDTD, which is able to simulate the step response output voltage of the sensor from which the frequency response is obtained using the same post-processing applied to the physical measurement.

Three-dimensional fine structure of the organization of microtubules in neurite varicosities by ultra-high voltage electron microscope tomography.

PubMed

Nishida, Tomoki; Yoshimura, Ryoichi; Endo, Yasuhisa

2017-09-01

Neurite varicosities are highly specialized compartments that are involved in neurotransmitter/ neuromodulator release and provide a physiological platform for neural functions. However, it remains unclear how microtubule organization contributes to the form of varicosity. Here, we examine the three-dimensional structure of microtubules in varicosities of a differentiated PC12 neural cell line using ultra-high voltage electron microscope tomography. Three-dimensional imaging showed that a part of the varicosities contained an accumulation of organelles that were separated from parallel microtubule arrays. Further detailed analysis using serial sections and whole-mount tomography revealed microtubules running in a spindle shape of swelling in some other types of varicosities. These electron tomographic results showed that the structural diversity and heterogeneity of microtubule organization supported the form of varicosities, suggesting that a different distribution pattern of microtubules in varicosities is crucial to the regulation of varicosities development.

On the mechanism of charge transport in low density polyethylene

NASA Astrophysics Data System (ADS)

Upadhyay, Avnish K.; Reddy, C. C.

2017-08-01

Polyethylene based polymeric insulators, are being increasingly used in the power industry for their inherent advantages over conventional insulation materials. Specifically, modern power cables are almost made with these materials, replacing the mass-impregnated oil-paper cable technology. However, for ultra-high dc voltage applications, the use of these polymeric cables is hindered by ununderstood charge transport and accumulation. The conventional conduction mechanisms (Pool-Frenkel, Schottky, etc.) fail to track high-field charge transport in low density polyethylene, which is semi-crystalline in nature. Until now, attention was devoted mainly to the amorphous region of the material. In this paper, authors propose a novel mechanism for conduction in low density polyethylene, which could successfully track experimental results. As an implication, a novel, substantial relationship is established for electrical conductivity that could be effectively used for understanding conduction and breakdown in polyethylene, which is vital for successful development of ultra-high voltage dc cables.

Process Properties of Electronic High Voltage Discharges Triggered by Ultra-short Pulsed Laser Filaments

NASA Astrophysics Data System (ADS)

Cvecek, Kristian; Gröschel, Benjamin; Schmidt, Michael

Remote processing of metallic workpieces by techniques based on electric arc discharge or laser irradiation for joining or cutting has a long tradition and is still being intensively investigated in present-day research. In applications that require high power processing, both approaches exhibit certain advantages and disadvantages that make them specific for a given task. While several hybrid approaches exist that try to combine the benefits of both techniques, none were as successful in providing a fixed electric discharge direction as discharges triggered by plasma filaments generated by ultra-short pulsed lasers. In this work we investigate spatial and temporal aspects of laser filament guided discharges and give an upper time delay between the filament creation and the electrical build-up of a dischargeable voltage for a successful filament triggered discharge.

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

PubMed

Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon

2013-01-01

We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.

Application of the electroosmotic effect for thrust generation

NASA Astrophysics Data System (ADS)

Hansen, Thomas Edward

The present work focuses on demonstrating the capabilities of electroosmotic pumps, (EOP) to generate thrust. An underwater glider was successfully propelled by electroosmosis for the first time published - at 0.85 inches per second. Asymmetric AC voltage pulsing proved to produce higher flow rates then equivalent DC pumps for the same average voltage. Ultra-short pulsing proved 100 nanosecond rise times in EOP are possible, which surpassed published predictions by three orders of magnitude. Theories behind efficiency losses of high power EOP were investigated. Direct measurement of effective voltage at the face of a membrane is the most accurate way to determine voltage drop across the electrolyte of an EOP. Forced convection lowered efficiency of the EOP for low voltages by preventing capacitance charging, but proved to prolong pump life during high power application.

Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: A modular vacuum ultraviolet source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sloan Roberts, F.; Anderson, Scott L.

2013-12-15

The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a “soft” photoionization source for gas-phase massmore » spectrometry.« less

Fabrication of universal serial bus flash disk type microfluidic chip electrophoresis and application for protein analysis under ultra low voltage

PubMed Central

Cong, Hailin; Xu, Xiaodan; Yu, Bing; Liu, Huwei

2016-01-01

A simple and effective universal serial bus (USB) flash disk type microfluidic chip electrophoresis (MCE) was developed by using poly(dimethylsiloxane) based soft lithography and dry film based printed circuit board etching techniques in this paper. The MCE had a microchannel diameter of 375 μm and an effective length of 25 mm. Equipped with a conventional online electrochemical detector, the device enabled effectively separation of bovine serum albumin, lysozyme, and cytochrome c in 80 s under the ultra low voltage from a computer USB interface. Compared with traditional capillary electrophoresis, the USB flash disk type MCE is not only portable and inexpensive but also fast with high separation efficiency. PMID:27042249

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Energy compression of nanosecond high-voltage pulses based on two-stage hybrid scheme

NASA Astrophysics Data System (ADS)

Ulmaskulov, M. R.; Mesyats, G. A.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Yalandin, M. I.

2017-04-01

Test results of high-voltage subnanosecond pulse generator with a hybrid, two-stage energy compression scheme are presented. After the first compression section with a gas discharger, a ferrite-filled gyromagnetic nonlinear transmitting line is used. The offered technical solution makes it possible to increase the voltage pulse amplitude from -185 kV to -325 kV, with a 2-ns pulse rise time minimized down to ˜180 ps. For the small output voltage amplitude of -240 kV, the shortest pulse front of ˜85 ps was obtained. The generator with maximum amplitude was utilized to form an ultra-short flow of runaway electrons in air-filled discharge gap with particles' energy approaching to 700 keV.

High voltage testing for the Majorana Demonstrator

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone, III, F. T.; ...

2016-04-04

The Majorana Collaboration is constructing the Majorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the Majorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of themore » high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during the Majorana Demonstrator commissioning phase were studied. Furthermore, a stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

High voltage testing for the Majorana Demonstrator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.

2016-07-01

The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path,more » including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.« less

An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

PubMed

Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

2016-06-02

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect

NASA Astrophysics Data System (ADS)

Mao, Kun; Qiao, Ming; Zhang, WenTong; Zhang, Bo; Li, Zhaoji

2014-11-01

This paper proposes a 700 V narrow channel region triple-RESURF (reduced surface field) n-type junction field-effect transistor (NCT-nJFET). Compared to traditional structures, low pinch-off voltage (VP) with unobvious drain-induced barrier lowering (DIBL) effect and large saturated current (IDsat) are achieved. This is because p-type buried layer (Pbury) and PWELL are introduced to shape narrow n-type channel in JFET channel region. DIBL sensitivity (SDIBL) is firstly introduced in this paper to analyze the DIBL effect of high-voltage long-channel JFET. Ultra-high breakdown voltage is obtained by triple RESURF technology. Experimental results show that proposed NCT-nJFET achieves 24-V VP, 3.5% SDIBL, 2.3-mA IDsat, 800-V OFF-state breakdown voltage (OFF-BV) and 650-V ON-state breakdown voltage when VGS equals 0 V (ON-BV).

Bridging the pressure gap: In situ atomic-level investigations of model platinum catalyst surfaces under reaction conditions by scanning tunneling microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

McIntyre, Brian James

1994-05-01

Results of this thesis show that STM measurements can provide information about the surfaces and their adsorbates. Stability of Pt(110) under high pressures of H 2, O 2, and CO was studied (Chap. 4). In situ UHV and high vacuum experiments were carried out for sulfur on Pt(111) (Chap.5). STM studies of CO/S/Pt(111) in high CO pressures showed that the Pt substrate undergoes a stacking-fault-domain reconstruction involving periodic transitions from fcc to hcp stacking of top-layer atoms (Chap.6). In Chap.7, the stability of propylene on Pt(111) and the decomposition products were studied in situ with the HPSTM. Finally, in Chap.8,more » results are presented which show how the Pt tip of the HPSTM was used to locally rehydrogenate and oxidize carbonaceous clusters deposited on the Pt(111) surface; the Pt tip acted as a catalyst after activation by short voltage pulses.« less

A compact ultra-clean system for deploying radioactive sources inside the KamLAND detector

DOE PAGES

Banks, T. I.; Freedman, S. J.; Wallig, J.; ...

2014-10-14

We describe a compact, ultra-clean device used to deploy radioactive sources along the vertical axis of the KamLAND liquid-scintillator neutrino detector for purposes of calibration. The device worked by paying out and reeling in precise lengths of a hanging, small-gauge wire rope (cable); an assortment of interchangeable radioactive sources could be attached to a weight at the end of the cable. All components exposed to the radiopure liquid scintillator were made of chemically compatible UHV-cleaned materials, primarily stainless steel, in order to avoid contaminating or degrading the scintillator. To prevent radon intrusion, the apparatus was enclosed in a hermetically sealedmore » housing inside a glove box, and both volumes were regularly flushed with purified nitrogen gas. Finally, an infrared camera attached to the side of the housing permitted real-time visual monitoring of the cable’s motion, and the system was controlled via a graphical user interface.« less

Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment

PubMed Central

Xin, Encheng; Ju, Yong; Yuan, Haiwen

2016-01-01

A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density. PMID:27775627

Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

PubMed

Xin, Encheng; Ju, Yong; Yuan, Haiwen

2016-10-20

A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled AlGaAs/GaAs Multiquantum Well IR Detectors for Focal Plane Array Staring IR Sensor Systems

DTIC Science & Technology

1992-02-01

Development of Ultra-Low Noise , High Sensitivity Planar Metal Grating Coupled AlGaAs/GaAs Multiquantum Well IR Detectors for Focal Plane Array Staring IR...dark current at 77 K was 10 times lower than the conventional QWIP reported in the literature. anid the BTM QWIP showed a largely enhanced intersubband...bias voltage in the BTM and SBTM1 QWIPs . The results reveal thiat therinionic emission is dominant current conduction mechianismn at higher temp

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Analysis of impact of “strong DC and weak AC” on receiving-end power system

NASA Astrophysics Data System (ADS)

Wang, Qiang; Li, Tianran; Yang, Pengcheng

2018-02-01

The rapid development of UHVDC transmission project has brought abundant power supply to the receiving-end power system area, but also many security and stability problems. This paper summarizes four elements that affect the strength of AC system, and then simulates the most basic two-terminal single-pole UHV transmission system by MATLAB/Simulink. It analyses the impact of receiving-end AC power system strength on real-time power, frequency and voltage. Finally, in view of operation risk of “strong DC and weak AC”, this paper puts forward three countermeasures.

Foundry Technologies Focused on Environmental and Ecological Applications

NASA Astrophysics Data System (ADS)

Roizin, Ya.; Lisiansky, M.; Pikhay, E.

Solutions allowing fabrication of remote control systems with integrated sensors (motes) were introduced as a part of CMOS foundry production platform and verified on silicon. The integrated features include sensors employing principles previously verified in the development of ultra-low power consuming non-volatile memories (C-Flash, MRAM) and components allowing low-power energy harvesting (low voltage rectifiers, high -voltage solar cells). The developed systems are discussed with emphasis on their environmental and security applications.

Ultra-low-power conversion and management techniques for thermoelectric energy harvesting applications

NASA Astrophysics Data System (ADS)

Fleming, Jerry W.

2010-04-01

Thermoelectric energy harvesting has increasingly gained acceptance as a potential power source that can be used for numerous commercial and military applications. However, power electronic designers have struggled to incorporate energy harvesting methods into their designs due to the relatively small voltage levels available from many harvesting device technologies. In order to bridge this gap, an ultra-low input voltage power conversion method is needed to convert small amounts of scavenged energy into a usable form of electricity. Such a method would be an enabler for new and improved medical devices, sensor systems, and other portable electronic products. This paper addresses the technical challenges involved in ultra-low-voltage power conversion by providing a solution utilizing novel power conversion techniques and applied technologies. Our solution utilizes intelligent power management techniques to control unknown startup conditions. The load and supply management functionality is also controlled in a deterministic manner. The DC to DC converter input operating voltage is 20mV with a conversion efficiency of 90% or more. The output voltage is stored into a storage device such as an ultra-capacitor or lithium-ion battery for use during brown-out or unfavorable harvesting conditions. Applications requiring modular, low power, extended maintenance cycles, such as wireless instrumentation would significantly benefit from the novel power conversion and harvesting techniques outlined in this paper.

Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch.

PubMed

Wang, Qi; Itoh, Yaomi; Tsuruoka, Tohru; Aono, Masakazu; Hasegawa, Tsuyoshi

2015-10-21

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Calibration of high voltages at the ppm level by the difference of ^{83{m}}Kr conversion electron lines at the KATRIN experiment

NASA Astrophysics Data System (ADS)

Arenz, M.; Baek, W.-J.; Beck, M.; Beglarian, A.; Behrens, J.; Bergmann, T.; Berlev, A.; Besserer, U.; Blaum, K.; Bode, T.; Bornschein, B.; Bornschein, L.; Brunst, T.; Buzinsky, N.; Chilingaryan, S.; Choi, W. Q.; Deffert, M.; Doe, P. J.; Dragoun, O.; Drexlin, G.; Dyba, S.; Edzards, F.; Eitel, K.; Ellinger, E.; Engel, R.; Enomoto, S.; Erhard, M.; Eversheim, D.; Fedkevych, M.; Fischer, S.; Formaggio, J. A.; Fränkle, F. M.; Franklin, G. B.; Friedel, F.; Fulst, A.; Gil, W.; Glück, F.; Ureña, A. Gonzalez; Grohmann, S.; Grössle, R.; Gumbsheimer, R.; Hackenjos, M.; Hannen, V.; Harms, F.; Haußmann, N.; Heizmann, F.; Helbing, K.; Herz, W.; Hickford, S.; Hilk, D.; Hillesheimer, D.; Howe, M. A.; Huber, A.; Jansen, A.; Kellerer, J.; Kernert, N.; Kippenbrock, L.; Kleesiek, M.; Klein, M.; Kopmann, A.; Korzeczek, M.; Kovalík, A.; Krasch, B.; Kraus, M.; Kuckert, L.; Lasserre, T.; Lebeda, O.; Letnev, J.; Lokhov, A.; Machatschek, M.; Marsteller, A.; Martin, E. L.; Mertens, S.; Mirz, S.; Monreal, B.; Neumann, H.; Niemes, S.; Off, A.; Osipowicz, A.; Otten, E.; Parno, D. S.; Pollithy, A.; Poon, A. W. P.; Priester, F.; Ranitzsch, P. C.-O.; Rest, O.; Robertson, R. G. H.; Roccati, F.; Rodenbeck, C.; Röllig, M.; Röttele, C.; Ryšavý, M.; Sack, R.; Saenz, A.; Schimpf, L.; Schlösser, K.; Schlösser, M.; Schönung, K.; Schrank, M.; Seitz-Moskaliuk, H.; Sentkerestiová, J.; Sibille, V.; Slezák, M.; Steidl, M.; Steinbrink, N.; Sturm, M.; Suchopar, M.; Suesser, M.; Telle, H. H.; Thorne, L. A.; Thümmler, T.; Titov, N.; Tkachev, I.; Trost, N.; Valerius, K.; Vénos, D.; Vianden, R.; Hernández, A. P. Vizcaya; Weber, M.; Weinheimer, C.; Weiss, C.; Welte, S.; Wendel, J.; Wilkerson, J. F.; Wolf, J.; Wüstling, S.; Zadoroghny, S.

2018-05-01

The neutrino mass experiment KATRIN requires a stability of 3 ppm for the retarding potential at - 18.6 kV of the main spectrometer. To monitor the stability, two custom-made ultra-precise high-voltage dividers were developed and built in cooperation with the German national metrology institute Physikalisch-Technische Bundesanstalt (PTB). Until now, regular absolute calibration of the voltage dividers required bringing the equipment to the specialised metrology laboratory. Here we present a new method based on measuring the energy difference of two ^{83{m}}Kr conversion electron lines with the KATRIN setup, which was demonstrated during KATRIN's commissioning measurements in July 2017. The measured scale factor M=1972.449(10) of the high-voltage divider K35 is in agreement with the last PTB calibration 4 years ago. This result demonstrates the utility of the calibration method, as well as the long-term stability of the voltage divider.

Interaction of bimetallic PtCo layers with bare and graphene-covered ZnO(0001) supports

NASA Astrophysics Data System (ADS)

Luo, Wen; Mélart, Christophe; Rach, Alain; Sutter, Christophe; Zafeiratos, Spyridon

2018-03-01

PtCo bimetallic overlayers supported on bare and graphene covered ZnO(0001) substrates have been successfully prepared and used to investigate the effect of graphene interlayer on the arrangement and the redox behaviour of PtCo. We found that Co is readily oxidized at the PtCo/ZnO interface during annealing in ultra-high vacuum (UHV) and low pressure O2 atmosphere, while after inserting a layer of graphene in-between, the oxidation of Co is restricted. In addition, the reduction of Co oxides by H2 is more pronounced when PtCo is supported on graphene covered ZnO. Apart from the cobalt oxidation state, graphene insertion at the interface also influences the PtCo arrangement by favouring their intermixing. Raman spectra show that low intensity defects are introduced into graphene layer after the deposition of PtCo and are enhanced by high temperature annealing. This study highlights the prospect of using graphene to tune the interaction between alloys and oxide supports which finds potential applications in catalysis.

Mixed material formation and erosion

NASA Astrophysics Data System (ADS)

Linsmeier, Ch.; Luthin, J.; Goldstraß, P.

2001-03-01

The formation of mixed phases on materials relevant for first wall components of fusion devices is studied under well-defined conditions in ultra-high vacuum (UHV). This is necessary in order to determine fundamental parameters governing the basic processes of chemical reaction, material mixing and erosion. We examined the binary systems comprising of the wall materials beryllium, silicon, tungsten and titanium and carbon, the latter being both a wall material and a plasma impurity. Experiments were carried out to study the interaction of carbon in the form of a vapor-deposited component on clean, well-defined elemental surfaces. The chemical composition and the binding state are measured by X-ray photoelectron spectroscopy (XPS) after annealing treatments. For all materials, a limited carbide formation is found at room temperature. Annealing carbon films on elemental substrate leads to a complete carbidization of the carbon layer. The carbide layers on Be and Si are stable even at very high temperatures, whereas the carbides of Ti and W dissolve. The erosion of these two metals by sputtering is then identical to the pure metals, whereas for Be and Si a protective carbide layer can reduce the sputtering yields.

Epitaxial ferromagnetic single clusters and smooth continuous layers on large area MgO/CVD graphene substrates

NASA Astrophysics Data System (ADS)

Godel, Florian; Meny, Christian; Doudin, Bernard; Majjad, Hicham; Dayen, Jean-François; Halley, David

2018-02-01

We report on the fabrication of ferromagnetic thin layers separated by a MgO dielectric barrier from a graphene-covered substrate. The growth of ferromagnetic metal layers—Co or Ni0.8Fe0.2—is achieved by Molecular Beam Epitaxy (MBE) on a 3 nm MgO(111) epitaxial layer deposited on graphene. In the case of a graphene, grown by chemical vapor deposition (CVD) over Ni substrates, an annealing at 450 °C, under ultra-high-vacuum (UHV) conditions, leads to the dewetting of the ferromagnetic layers, forming well-defined flat facetted clusters whose shape reflects the substrate symmetry. In the case of CVD graphene transferred on SiO2, no dewetting is observed after same annealing. We attribute this difference to the mechanical stress states induced by the substrate, illustrating how it matters for epitaxial construction through graphene. Controlling the growth parameters of such magnetic single objects or networks could benefit to new architectures for catalysis or spintronic applications.

Surface vacancies concentration of CeO2(1 1 1) using kinetic Monte Carlo simulations

NASA Astrophysics Data System (ADS)

Mattiello, S.; Kolling, S.; Heiliger, C.

2016-01-01

Kinetic Monte Carlo simulations (kMC) are useful tools for the investigation of the dynamics of surface properties. Within this method we investigate the oxygen vacancy concentration of \\text{Ce}{{\\text{O}}2}(1 1 1) at ultra high vacuum conditions (UHV). In order to achieve first principles calculations the input for the simulations, i.e. energy barriers for the microscopic processes, we use density functional theory (DFT) results from literature. We investigate the possibility of ad- and desorption of oxygen on ceria as well as the diffusion of oxygen vacancies to and from the subsurface. In particular, we focus on the vacancy surface concentration as well as on the ratio of the number of subsurface vacancies to the number of vacancies at the surface. The comparison of our dynamically obtained results to the experimental findings leads to several issues. In conclusion, we can claim a substantial incompatibility of the experimental results and the dynamical calculation using DFT inputs.

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

NASA Astrophysics Data System (ADS)

Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet H.; Bardin, Joseph C.

2016-01-01

Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon-germanium LNAs is explored to study the possibility of operating these devices from low supply voltages. A new small-signal heterojunction bipolar transistor noise model applicable to both the forward-active and saturation regimes is developed from first principles. Experimental measurements of a device across a wide range of temperatures are then presented and the dependence of the noise parameters on collector-emitter voltage is described. This paper concludes with the demonstration of a high-gain 1.8-3.6-GHz cryogenic LNA achieving a noise temperature of 3.4-5 K while consuming just 290 μW when operating at 15-K physical temperature.

A fully integrated, wide-load-range, high-power-conversion-efficiency switched capacitor DC-DC converter with adaptive bias comparator for ultra-low-power power management integrated circuit

NASA Astrophysics Data System (ADS)

Asano, Hiroki; Hirose, Tetsuya; Kojima, Yuta; Kuroki, Nobutaka; Numa, Masahiro

2018-04-01

In this paper, we present a wide-load-range switched-capacitor DC-DC buck converter with an adaptive bias comparator for ultra-low-power power management integrated circuit. The proposed converter is based on a conventional one and modified to operate in a wide load range by developing a load current monitor used in an adaptive bias comparator. Measurement results demonstrated that our proposed converter generates a 1.0 V output voltage from a 3.0 V input voltage at a load of up to 100 µA, which is 20 times higher than that of the conventional one. The power conversion efficiency was higher than 60% in the load range from 0.8 to 100 µA.

Ultra-Compact Multitip Scanning Probe Microscope with an Outer Diameter of 50 mm

NASA Astrophysics Data System (ADS)

Cherepanov, Vasily; Zubkov, Evgeny; Junker, Hubertus; Korte, Stefan; Blab, Marcus; Coenen, Peter; Voigtländer, Bert

We present a multitip scanning tunneling microscope (STM) where four independent STM units are integrated on a diameter of 50 mm. The coarse positioning of the tips is done under the control of an optical microscope or an SEM in vacuum. The heart of this STM is a new type of piezoelectric coarse approach called Koala Drive which can have a diameter greater than 2.5 mm and a length smaller than 10 mm. Alternating movements of springs move a central tube which holds the STM tip or AFM sensor. This new operating principle provides a smooth travel sequence and avoids shaking which is intrinsically present for nanopositioners based on inertial motion with saw tooth driving signals. Inserting the Koala Drive in a piezo tube for xyz-scanning integrates a complete STM inside a 4 mm outer diameter piezo tube of <10 mm length. The use of the Koala Drive makes the scanning probe microscopy design ultra-compact and accordingly leads to a high mechanical stability. The drive is UHV, low temperature, and magnetic field compatible. The compactness of the Koala Drive allows building a four-tip STM as small as a single-tip STM with a drift of <0.2 nm/min and lowest resonance frequencies of 2.5 (xy) and 5.5 kHz (z). We present examples of the performance of the multitip STM designed using the Koala Drive.

UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels

NASA Astrophysics Data System (ADS)

Berthier, Florent; Beigne, Edith; Heitzmann, Frédéric; Debicki, Olivier; Christmann, Jean-Frédéric; Valentian, Alexandre; Billoint, Olivier; Amat, Esteve; Morche, Dominique; Chairat, Soundous; Sentieys, Olivier

2016-11-01

In this paper, we propose to analyze Ultra Thin Body and Box FDSOI technology suitability and architectural solutions for IoT applications and more specifically for autonomous Wireless Sensor Nodes (WSNs). As IoT applications are extremely diversified there is a strong need for flexible solutions at design, architectural level but also at technological level. Moreover, as most of those systems are recovering their energy from the environment, they are challenged by low voltage supplies and low leakage functionalities. We detail in this paper some Ultra Thin Body and Box FDSOI 28 nm characteristics and results demonstrating that this technology could be a perfect option for multidisciplinary IoT devices. Back biasing capabilities and low voltage features are investigated demonstrating efficient high speed/low leakage flexibility. In addition, architectural solutions for WSNs microcontroller are also proposed taking advantage of Ultra Thin Body and Box FDSOI characteristics for full user applicative flexibility. A partitioned architecture between an Always Responsive part with an asynchronous Wake Up Controller (WUC) managing WSN current tasks and an On Demand part with a main processor for application maintenance is presented. First results of the Always Responsive part implemented in Ultra Thin Body and Box FDSOI 28 nm are also exposed.

A non-inactivating high-voltage-activated two-pore Na+ channel that supports ultra-long action potentials and membrane bistability

NASA Astrophysics Data System (ADS)

Cang, Chunlei; Aranda, Kimberly; Ren, Dejian

2014-09-01

Action potentials (APs) are fundamental cellular electrical signals. The genesis of short APs lasting milliseconds is well understood. Ultra-long APs (ulAPs) lasting seconds to minutes also occur in eukaryotic organisms, but their biological functions and mechanisms of generation are largely unknown. Here, we identify TPC3, a previously uncharacterized member of the two-pore channel protein family, as a new voltage-gated Na+ channel (NaV) that generates ulAPs, and that establishes membrane potential bistability. Unlike the rapidly inactivating NaVs that generate short APs in neurons, TPC3 has a high activation threshold, activates slowly and does not inactivate—three properties that help generate long-lasting APs and guard the membrane against unintended perturbation. In amphibian oocytes, TPC3 forms a channel similar to channels induced by depolarization and sperm entry into eggs. TPC3 homologues are present in plants and animals, and they may be important for cellular processes and behaviours associated with prolonged membrane depolarization.

Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

NASA Astrophysics Data System (ADS)

Zhang, Shuai; Zhang, Bo; He, Jinliang

2014-06-01

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and AC coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.

Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology

NASA Astrophysics Data System (ADS)

Athanasiou, Sotirios; Legrand, Charles-Alexandre; Cristoloveanu, Sorin; Galy, Philippe

2017-02-01

We propose a novel ESD protection device (GDNMOS: Gated Diode merged NMOS) fabricated with 28 nm UTBB FD-SOI high-k metal gate technology. By modifying the combination of the diode and transistor gate stacks, the robustness of the device is optimized, achieving a maximum breakdown voltage (VBR) of 4.9 V. In addition, modifications of the gate length modulate the trigger voltage (Vt1) with a minimum value of 3.5 V. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation. A lower doping of the base enhances the bipolar gain, leading to thyristor behavior. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior.

High-energy green supercapacitor driven by ionic liquid electrolytes as an ultra-high stable next-generation energy storage device

NASA Astrophysics Data System (ADS)

Thangavel, Ranjith; Kannan, Aravindaraj G.; Ponraj, Rubha; Thangavel, Vigneysh; Kim, Dong-Won; Lee, Yun-Sung

2018-04-01

Development of supercapacitors with high energy density and long cycle life using sustainable materials for next-generation applications is of paramount importance. The ongoing challenge is to elevate the energy density of supercapacitors on par with batteries, while upholding the power and cyclability. In addition, attaining such superior performance with green and sustainable bio-mass derived compounds is very crucial to address the rising environmental concerns. Herein, we demonstrate the use of watermelon rind, a bio-waste from watermelons, towards high energy, and ultra-stable high temperature green supercapacitors with a high-voltage ionic liquid electrolyte. Supercapacitors assembled with ultra-high surface area, hierarchically porous carbon exhibits a remarkable performance both at room temperature and at high temperature (60 °C) with maximum energy densities of ∼174 Wh kg-1 (25 °C), and 177 Wh kg-1 (60 °C) - based on active mass of both electrodes. Furthermore, an ultra-high specific power of ∼20 kW kg-1 along with an ultra-stable cycling performance with 90% retention over 150,000 cycles has been achieved even at 60 °C, outperforming supercapacitors assembled with other carbon based materials. These results demonstrate the potential to develop high-performing, green energy storage devices using eco-friendly materials for next generation electric vehicles and other advanced energy storage systems.

Efficiency and weight of voltage multiplier type ultra lightweight dc-dc converters

NASA Technical Reports Server (NTRS)

Harrigill, W. T., Jr.; Myers, I. T.

1975-01-01

An analytical and experimental study was made of a capacitor-diode voltage multiplier without a transformer which offers the possibility of high efficiency with light weight. The dc-dc conversion efficiencies of about 94 percent were achieved at output powers of 150 watts at 1000 volts using 8x multiplication. A detailed identification of losses was made, including forward drop losses in component, switching losses, reverse junction capacitance charging losses, and charging losses in the main ladder capacitors.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

An advanced molecule-surface scattering instrument for study of vibrational energy transfer in gas-solid collisions.

PubMed

Ran, Qin; Matsiev, Daniel; Wodtke, Alec M; Auerbach, Daniel J

2007-10-01

We describe an advanced and highly sensitive instrument for quantum state-resolved molecule-surface energy transfer studies under ultrahigh vacuum (UHV) conditions. The apparatus includes a beam source chamber, two differential pumping chambers, and a UHV chamber for surface preparation, surface characterization, and molecular beam scattering. Pulsed and collimated supersonic molecular beams are generated by expanding target molecule mixtures through a home-built pulsed nozzle, and excited quantum state-selected molecules were prepared via tunable, narrow-band laser overtone pumping. Detection systems have been designed to measure specific vibrational-rotational state, time-of-flight, angular and velocity distributions of molecular beams coming to and scattered off the surface. Facilities are provided to clean and characterize the surface under UHV conditions. Initial experiments on the scattering of HCl(v = 0) from Au(111) show many advantages of this new instrument for fundamental studies of the energy transfer at the gas-surface interface.

High-Voltage Clock Driver for Photon-Counting CCD Characterization

NASA Technical Reports Server (NTRS)

Baker, Robert

2013-01-01

A document discusses the CCD97 from e2v technologies as it is being evaluated at Goddard Space Flight Center's Detector Characterization Laboratory (DCL) for possible use in ultra-low background noise space astronomy applications, such as Terrestrial Planet Finder Coronagraph (TPF-C). The CCD97 includes a photoncounting mode where the equivalent output noise is less than one electron. Use of this mode requires a clock signal at a voltage level greater than the level achievable by the existing CCD (charge-coupled-device) electronics. A high-voltage waveform generator has been developed in code 660/601 to support the CCD97 evaluation. The unit generates required clock waveforms at voltage levels from -20 to +50 V. It deals with standard and arbitrary waveforms and supports pixel rates from 50 to 500 kHz. The system is designed to interface with existing Leach CCD electronics.

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Comparison of direct current and 50 Hz alternating current microscopic corona characteristics on conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuai, E-mail: zhangshuai94@gmail.com; Zhang, Bo, E-mail: shizbcn@mail.tsinghua.edu.cn; He, Jinliang, E-mail: hejl@tsinghua.edu.cn

Corona discharge is one of the major design factors for extra-high voltage and ultra-high voltage DC/AC transmission lines. Under different voltages, corona discharge reveals different characteristics. This paper aims at investigating DC and AC coronas on the microscopic scale. To obtain the specific characteristics of DC and AC coronas, a new measurement approach that utilizes a coaxial wire-cylinder corona cage is designed in this paper, and wires of different diameters are used in the experiment. Based on the measurements, the respective microscopic characteristics of DC and AC coronas are analyzed and compared. With differences in characteristics between DC and ACmore » coronas proposed, this study provides useful insights into DC/AC corona discharges on transmission line applications.« less

Distributed Heterogeneous Simulation of a Hybrid-Electric Vehicle

DTIC Science & Technology

2006-03-29

voltage dc bus via a fully controlled three-phase bridge converter. Also connc·:[uJ iu tilL UUS are the Lithium - ion battery bank, the ultra-capacitor...s~b~;~~~~·3 .... ! Lithium - Ion Battery Storage I _ .. ~:; Low-voltage Bus i I I] j i DC~ Converter ! -~~- ti~! 1 I --Ii! Battery i...devices in the propulsion system include the lithium - ion battery bank and the ultra-capacitor. Based on the range of the vehicle in the stealth model

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Raupp, Gregory B.

1993-01-01

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Liquid crystal modulator with ultra-wide dynamic range and adjustable driving voltage.

PubMed

Wang, Xing-jun; Huang, Zhang-di; Feng, Jing; Chen, Xiang-fei; Liang, Xiao; Lu, Yan-qing

2008-08-18

We demonstrated a reflective-type liquid crystal (LC) intensity modulator in 1550 nm telecomm band. An effective way to compensate the residual phase of a LC cell is proposed. With the adjustment of a true zero-order quarter wave plate and enhanced by total internal reflection induced birefringence, over 53 dB dynamic range was achieved, which is much desired for some high-end optical communication, infrared scene projection applications. In addition, the driving voltages were decreased and adjustable. Mechanical and spectral tolerance measurements show that our LC modulator is quite stable. Further applications of our experimental setup were discussed including bio-sensors and high speed modulators.

Down to 2 nm Ultra Shallow Junctions : Fabrication by IBS Plasma Immersion Ion Implantation Prototype PULSION registered

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Mathieu, Gilles

Classical beam line implantation is limited in low energies and cannot achieve P+/N junctions requirements for <45nm node. Compared to conventional beam line ion implantation, limited to a minimum of about 200 eV, the efficiency of Plasma Immersion Ion Implantation (PIII) is no more to prove for the realization of Ultra Shallow Junctions (USJ) in semiconductor applications: this technique allows to get ultimate shallow profiles (as implanted) thanks to no lower limitation of energy and offers high dose rate. In the field of the European consortium NANOCMOS, Ultra Shallow Junctions implanted on a semi-industrial PIII prototype (PULSION registered ) designedmore » by the French company IBS, have been studied. Ultra shallow junctions implanted with BF3 at acceleration voltages down to 20V were realized. Contamination level, homogeneity and depth profile are studied. The SIMS profiles obtained show the capability to make ultra shallow profiles (as implanted) down to 2nm.« less

The design and implementation of on-line monitoring system for UHV compact shunt capacitors

NASA Astrophysics Data System (ADS)

Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

2017-08-01

Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

Detectors in Extreme Conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blaj, G.; Carini, G.; Carron, S.

2015-08-06

Free Electron Lasers opened a new window on imaging the motion of atoms and molecules. At SLAC, FEL experiments are performed at LCLS using 120Hz pulses with 10 12 - 10 13 photons in 10 femtoseconds (billions of times brighter than the most powerful synchrotrons). This extreme detection environment raises unique challenges, from obvious to surprising. Radiation damage is a constant threat due to accidental exposure to insufficiently attenuated beam, focused beam and formation of ice crystals reflecting the beam onto the detector. Often high power optical lasers are also used (e.g., 25TW), increasing the risk of damage or impedingmore » data acquisition through electromagnetic pulses (EMP). The sample can contaminate the detector surface or even produce shrapnel damage. Some experiments require ultra high vacuum (UHV) with strict design, surface contamination and cooling requirements - also for detectors. The setup is often changed between or during experiments with short turnaround times, risking mechanical and ESD damage, requiring work planning, training of operators and sometimes continuous participation of the LCLS Detector Group in the experiments. The detectors used most often at LCLS are CSPAD cameras for hard x-rays and pnCCDs for soft x-rays.« less

Precisely controlled fabrication, manipulation and in-situ analysis of Cu based nanoparticles.

PubMed

Martínez, L; Lauwaet, K; Santoro, G; Sobrado, J M; Peláez, R J; Herrero, V J; Tanarro, I; Ellis, G J; Cernicharo, J; Joblin, C; Huttel, Y; Martín-Gago, J A

2018-05-08

The increasing demand for nanostructured materials is mainly motivated by their key role in a wide variety of technologically relevant fields such as biomedicine, green sustainable energy or catalysis. We have succeeded to scale-up a type of gas aggregation source, called a multiple ion cluster source, for the generation of complex, ultra-pure nanoparticles made of different materials. The high production rates achieved (tens of g/day) for this kind of gas aggregation sources, and the inherent ability to control the structure of the nanoparticles in a controlled environment, make this equipment appealing for industrial purposes, a highly coveted aspect since the introduction of this type of sources. Furthermore, our innovative UHV experimental station also includes in-flight manipulation and processing capabilities by annealing, acceleration, or interaction with background gases along with in-situ characterization of the clusters and nanoparticles fabricated. As an example to demonstrate some of the capabilities of this new equipment, herein we present the fabrication of copper nanoparticles and their processing, including the controlled oxidation (from Cu 0 to CuO through Cu 2 O, and their mixtures) at different stages in the machine.

Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages

NASA Astrophysics Data System (ADS)

Pastore, I.; Poplausks, R.; Apsite, I.; Pastare, I.; Lombardi, F.; Erts, D.

2011-06-01

Formation of ultrathin anodised aluminium oxide (AAO) membranes with high aspect ratio by Al anodization in sulphuric and oxalic acids at low potentials was investigated. Low anodization potentials ensure slow electrochemical reaction speeds and formation of AAO membranes with pore diameter and thickness below 20 nm and 70 nm respectively. Minimum time necessary for formation of continuous AAO membranes was determined. AAO membrane pore surface was covered with polymer Paraloid B72TM to transport it to the selected substrate. The fabricated ultra thin AAO membranes could be used to fabricate nanodot arrays on different surfaces.

Carrier-envelope phase control using linear electro-optic effect.

PubMed

Gobert, O; Paul, P M; Hergott, J F; Tcherbakoff, O; Lepetit, F; 'Oliveira, P D; Viala, F; Comte, M

2011-03-14

We present a new method to control the Carrier-Envelope Phase of ultra-short laser pulses by using the linear Electro-Optic Effect. Experimental demonstration is carried out on a Chirped Pulse Amplification based laser. Phase shifts greater than π radian can be obtained by applying moderate voltage on a LiNbO3 crystal with practically no changes to all other parameters of the pulse with the exception of its group delay. Time response of the Electro-Optic effect makes possible shaping at a high repetition rate or stabilization of the CEP of ultra short CPA laser systems.

Structural evolution of nanoporous ultra-low k dielectrics under voltage stress

NASA Astrophysics Data System (ADS)

Raja, Archana; Shaw, Thomas; Grill, Alfred; Laibowitz, Robert; Heinz, Tony

2013-03-01

High speed interconnects in advanced integrated circuits require ultra-low-k dielectrics. Reduction of the dielectric constant is achieved via incorporation of nanopores in structures containing silicon, carbon, oxygen and hydrogen (SiCOH). We study nanoporous SiCOH films of k=2.5 and thicknesses of 40 - 400 nm. Leakage currents develop in the films under long-term voltage stress, eventually leading to breakdown and chip failure. Previous work* has shown the build-up of trap states as dielectric breakdown progresses. Using FTIR spectroscopy we have tracked the reorganization of the bonds in the SiCOH networks induced by voltage stress. Our results indicate that the cleavage of the Si-C and SiC-O bonds contribute toward increase in the density of bulk trapping states as breakdown is approached. AC conductance and capacitance measurements have also been carried out to describe interfacial and bulk traps and mechanisms. Comparison of breakdown properties of films with differing carbon content will also be presented to further delineate the role of carbon. *Atkin, J.M.; Shaw, T.M.; Liniger, E.; Laibowitz, R.B.; Heinz, T.F. Reliability Physics Symposium (IRPS), 2012 IEEE International Supported by the Semiconductor Research Corporation

A Study on the Rectification Property of Self-Assembled Viologen Single Molecules Using a Scanning Tunneling Microscopy.

PubMed

Lee, Nam-Suk; Shin, Hoon-Kyu; Kwon, Young-Soo

2015-02-01

An ultrahigh vacuum scanning tunneling microscopy (UHV-STM) and a scanning tunneling spectroscopy (STS) are used measure the rectification property of self-assembled viologen single molecules (VC8SH, VC10SH, HSC8VC8SH, and HSC10VC10SH) in the previous study. Using STM we observe viologen single molecules in the self-assembled octanethiol (OT) SAM matrix. In the OT matrix a mixed phase that includes a c(4 x 2) superlattice of high-density standing up-phase is observed. We indicate high peak current-like rectifications at + 1.68 V(VC8SH), + 1.56 V(VC10SH), + 1.14 V(HSC8VC8SH), and + 1.04 V(HSC10VC10SH) based on the experiment implemented in this study. In addition, transition voltages (Vtrans) from direct tunneling to the Fowler-Nordheim tunneling are presented at 1.08 V(VC8SH), 0.97 V(VC10SH), 0.99 V(HSC8VC8SH), and 0.89 V(HSC1VC1SH).

High power radiators of ultra-short electromagnetic quasi-unipolar pulses

NASA Astrophysics Data System (ADS)

Fedorov, V. M.; Ostashev, V. E.; Tarakanov, V. P.; Ul'yanov, A. V.

2017-05-01

Results of creation, operation, and diagnostics of the high power radiators for ultra-short length electromagnetic pulses (USEMPs) with a quasi-unipolar profile, which have been developed in our laboratory, are presented. The radiating module contains: the ultra-wideband (UWB) antenna array, the exciting high voltage pulse semiconductor generator (a pulser), the power source and the control unit. The principles of antenna array with a high efficiency aperture about 0.9 were developed using joint four TEM-horns with shielding electrodes in every TEM-horn. Sizes of the antenna apertures were (16-60) cm. The pulsers produced by “FID Technology” company had the following parameters: 50 Ohm connector impedance, unipolar pulses voltages (10-100) kV, the rise-time (0.04-0.15) ns, and the width (0.2-1) ns. The modules radiate the USEMPs of (0.1-10) GHz spectrum, their repetition rate is (1-100) kHz, and the effective potential is E*R = (20-400) kV, producing the peak E-field into the far-zone of R-distance. Parameters of the USEMP waves were measured by a calibrated sensor with the following characteristics: the sensitivity 0.32V/(kV/m), the rise-time 0.03 ns, the duration up to 7 ns. The measurements were in agreement with the simulation results, which were obtained using the 3-D code “KARAT”. The USEMP waves with amplitudes (1-10) kV/m and the pulse repetition rate (0.5-100) kHz were successfully used to examine various electronic devices for an electromagnetic immunity.

Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

2016-09-01

We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs <30 Ω/sq). These CuNW TCEs are subsequently hybridized with aluminum-doped zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

The Effect of Oxidation and Charge/Discharge rates on Li Plating in All-Solid-State Batteries

NASA Astrophysics Data System (ADS)

Yulaev, Alexander; Oleshko, Vladimir; Talin, A. Alec; Leite, Marina S.; Kolmakov, Andrei

All-solid-state Li-ion batteries (SSLIBs) is currently an extensive area of research due to their promising specific power and energy density properties. Moreover, SSLIBs significantly mitigate the safety risks of the thermal runaway that may occur in liquid electrolyte batteries. We fabricated a model SSLIB, which consists of LiCoO2 cathode layer, LiPON as an electrolyte, and a model ultra-thin carbon anode. Using in operando scanning electron microscopy in conjunction with electrochemical measurements, we found that depending on ambient oxidizing conditions and charging rate, the morphology of plated lithium alternates between quasi-1D and 3D microstructures. In addition, we were able to use an electron beam as a virtual nano-electrode to selectively control the nucleation rate and Li growth structure during the SSLIB charging with high spatial resolution. Finally, we determined the conditions when lithium may be oxidized even during battery cycling under UHV conditions, leading to significant capacity losses. We foresee that our work will provide deeper insights into a safe SSLIB performance under real world operating conditions.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, B. S.; Rajasthan Technical University, Rawatbhata Road, Kota 324010; Singh, A.

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surfacemore » with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.« less

Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction

NASA Astrophysics Data System (ADS)

Takayanagi, Kunio; Tanishiro, Yasumasa; Takahashi, Shigeki; Takahashi, Masaetsu

1985-12-01

The atomic structure of the 7 × 7 reconstructed Si(111) surface has been analysed by ultra-high vacuum (UHV) transmission electron diffraction (TED). A possible projected structure of the surface is deduced from the intensity distribution in TED patterns of normal electron incidence and from Patterson and Fourier syntheses of the intensities. A new three-dimensional structure model, the DAS model, is proposed: The model consists of 12 adatoms arranged locally in the 2 × 2 structure, a stacking fault layer and a layer with a vacancy at the corner and 9 dimers on the sides of each of the two triangular subcells of the 7 × 7 unit cell. The silicon layers in one subcell are stacked with the normal sequence, CcAaB + adatoms, while those in the other subcell are stacked with a faulted sequence, CcAa/C + adatoms. The model has only 19 dangling bonds, the smallest number among models so far proposed. Previously proposed models are tested quantitatively by the TED intensity. Advantages and limits of the TED analysis are discussed.

Miniature thermo-electric cooled cryogenic pump

DOEpatents

Keville, R.F.

1997-11-18

A miniature thermo-electric cooled cryogenic pump is described for removing residual water molecules from an inlet sample prior to sample analysis in a mass spectroscopy system, such as ion cyclotron resonance (ICR) mass spectroscopy. The cryogenic pump is a battery operated, low power (<1.6 watts) pump with a {Delta}T=100 C characteristic. The pump operates under vacuum pressures of 5{times}10{sup {minus}4} Torr to ultra high vacuum (UHV) conditions in the range of 1{times}10{sup {minus}7} to 3{times}10{sup {minus}9} Torr and will typically remove partial pressure, 2{times}10{sup {minus}7} Torr, residual water vapor. The cryogenic pump basically consists of an inlet flange piece, a copper heat sink with a square internal bore, four two tier Peltier (TEC) chips, a copper low temperature square cross sectional tubulation, an electronic receptacle, and an exit flange piece, with the low temperature tubulation being retained in the heat sink at a bias angle of 5{degree}, and with the TECs being positioned in parallel to each other with a positive potential being applied to the top tier thereof. 2 figs.

Miniature thermo-electric cooled cryogenic pump

DOEpatents

Keville, Robert F.

1997-01-01

A miniature thermo-electric cooled cryogenic pump for removing residual water molecules from an inlet sample prior to sample analysis in a mass spectroscopy system, such as ion cyclotron resonance (ICR) mass spectroscopy. The cryogenic pump is a battery operated, low power (<1.6 watts) pump with a .DELTA.T=100.degree. C. characteristic. The pump operates under vacuum pressures of 5.times.10.sup.-4 Torr to ultra high vacuum (UHV) conditions in the range of 1.times.10.sup.-7 to 3.times.10.sup.-9 Torr and will typically remove partial pressure, 2.times.10.sup.-7 Torr, residual water vapor. The cryogenic pump basically consists of an inlet flange piece, a copper heat sink with a square internal bore, four two tier Peltier (TEC) chips, a copper low temperature square cross sectional tubulation, an electronic receptacle, and an exit flange piece, with the low temperature tubulation being retained in the heat sink at a bias angle of 5.degree., and with the TECs being positioned in parallel to each other with a positive potential being applied to the top tier thereof.

Portable mini-chamber for temperature dependent studies using small angle and wide angle x-ray scattering

NASA Astrophysics Data System (ADS)

Dev, Arun Singh; Kumar, Dileep; Potdar, Satish; Pandit, Pallavi; Roth, Stephan V.; Gupta, Ajay

2018-04-01

The present work describes the design and performance of a vacuum compatible portable mini chamber for temperature dependent GISAXS and GIWAXS studies of thin films and multilayer structures. The water cooled body of the chamber allows sample annealing up to 900 K using ultra high vacuum compatible (UHV) pyrolytic boron nitride heater, thus making it possible to study the temperature dependent evolution of structure and morphology of two-dimensional nanostructured materials. Due to its light weight and small size, the chamber is portable and can be accommodated at synchrotron facilities worldwide. A systematic illustration of the versatility of the chamber has been demonstrated at beamline P03, PETRA-III, DESY, Hamburg, Germany. Temperature dependent grazing incidence small angle x-ray scattering (GISAXS) and grazing incidence wide angle x-ray scattering (GIWAXS) measurements were performed on oblique angle deposited Co/Ag multilayer structure, which jointly revealed that the surface diffusion in Co columns in Co/Ag multilayer enhances by increasing temperature from RT to ˜573 K. This results in a morphology change from columnar tilted structure to densely packed morphological isotropic multilayer.

Development of the Fast Scintillation Detector with Programmable High Voltage Adjustment Suitable for Moessbauer Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prochazka, R.; Frydrych, J.; Pechousek, J.

2010-07-13

This work is focused on a development of a compact fast scintillation detector suitable for Moessbauer spectroscopy (low energy X-ray/{gamma}-ray detection) where high counting rates are inevitable. Optimization of this part was necessary for a reliable function, better time resolution and to avoid a detector pulses pile-up effect. The pile-up effect decreases the measurement performance, significantly depends on the source activity and also on the pulse duration. Our new detection unit includes a fast scintillation crystal YAP:Ce, an R6095 photomultiplier tube, a high voltage power supply socket C9028-01 assembly, an AD5252 digital potentiometer with an I2C interface and an AD8000more » ultra fast operation preamplifier. The main advantages of this solution lie in a short pulse duration (less than 200 ns), stable operation for high activities, programmable gain of the high voltage supply and compact design in the aluminum housing.« less

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prasetyaningrum, A., E-mail: ajiprasetyaningrum@gmail.com; Ratnawati,; Jos, B.

Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flowmore » rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.« less

Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

NASA Astrophysics Data System (ADS)

Prasetyaningrum, A.; Ratnawati, Jos, B.

2015-12-01

Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O3) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

Microstructure investigation of 13Cr-2Mo ODS steel components obtained by high voltage electric discharge compaction technique

DOE PAGES

Bogachev, Igor; Yudin, Artem; Grigoryev, Evgeniy; ...

2015-11-02

Refractory oxide dispersion strengthened 13Cr-2Mo steel powder was successfully consolidated to near theoretical density using high voltage electric discharge compaction. Cylindrical samples with relative density from 90% to 97% and dimensions of 10 mm in diameter and 10–15 mm in height were obtained. Consolidation conditions such as pressure and voltage were varied in some ranges to determine the optimal compaction regime. Three different concentrations of yttria were used to identify its effect on the properties of the samples. It is shown that the utilized ultra-rapid consolidation process in combination with high transmitted energy allows obtaining high density compacts, retaining themore » initial structure with minimal grain growth. The experimental results indicate some heterogeneity of the structure which may occur in the external layers of the tested samples due to various thermal and electromagnetic in-processing effects. As a result, the choice of the optimal parameters of the consolidation enables obtaining samples of acceptable quality.« less

Microstructure Investigation of 13Cr-2Mo ODS Steel Components Obtained by High Voltage Electric Discharge Compaction Technique.

PubMed

Bogachev, Igor; Yudin, Artem; Grigoryev, Evgeniy; Chernov, Ivan; Staltsov, Maxim; Khasanov, Oleg; Olevsky, Eugene

2015-11-02

Refractory oxide dispersion strengthened 13Cr-2Mo steel powder was successfully consolidated to near theoretical density using high voltage electric discharge compaction. Cylindrical samples with relative density from 90% to 97% and dimensions of 10 mm in diameter and 10-15 mm in height were obtained. Consolidation conditions such as pressure and voltage were varied in some ranges to determine the optimal compaction regime. Three different concentrations of yttria were used to identify its effect on the properties of the samples. It is shown that the utilized ultra-rapid consolidation process in combination with high transmitted energy allows obtaining high density compacts, retaining the initial structure with minimal grain growth. The experimental results indicate some heterogeneity of the structure which may occur in the external layers of the tested samples due to various thermal and electromagnetic in-processing effects. The choice of the optimal parameters of the consolidation enables obtaining samples of acceptable quality.

Tomography experiment of an integrated circuit specimen using 3 MeV electrons in the transmission electron microscope.

PubMed

Zhang, Hai-Bo; Zhang, Xiang-Liang; Wang, Yong; Takaoka, Akio

2007-01-01

The possibility of utilizing high-energy electron tomography to characterize the micron-scale three dimensional (3D) structures of integrated circuits has been demonstrated experimentally. First, electron transmission through a tilted SiO(2) film was measured with an ultrahigh-voltage electron microscope (ultra-HVEM) and analyzed from the point of view of elastic scattering of electrons, showing that linear attenuation of the logarithmic electron transmission still holds valid for effective specimen thicknesses up to 5 microm under 2 MV accelerating voltages. Electron tomography of a micron-order thick integrated circuit specimen including the Cu/via interconnect was then tried with 3 MeV electrons in the ultra-HVEM. Serial projection images of the specimen tilted at different angles over the range of +/-90 degrees were acquired, and 3D reconstruction was performed with the images by means of the IMOD software package. Consequently, the 3D structures of the Cu lines, via and void, were revealed by cross sections and surface rendering.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

An ultra-low power output capacitor-less low-dropout regulator with slew-rate-enhanced circuit

NASA Astrophysics Data System (ADS)

Cheng, Xin; Zhang, Yu; Xie, Guangjun; Yang, Yizhong; Zhang, Zhang

2018-03-01

An ultra-low power output-capacitorless low-dropout (LDO) regulator with a slew-rate-enhanced (SRE) circuit is introduced. The increased slew rate is achieved by sensing the transient output voltage of the LDO and then charging (or discharging) the gate capacitor quickly. In addition, a buffer with ultra-low output impedance is presented to improve line and load regulations. This design is fabricated by SMIC 0.18 μm CMOS technology. Experimental results show that, the proposed LDO regulator only consumes an ultra-low quiescent current of 1.2 μA. The output current range is from 10 μA to 200 mA and the corresponding variation of output voltage is less than 40 mV. Moreover, the measured line regulation and load regulation are 15.38 mV/V and 0.4 mV/mA respectively. Project supported by the National Natural Science Foundation of China (Nos. 61401137, 61404043, 61674049).

Tunable rejection filters with ultra-wideband using zeroth shear mode plate wave resonators

NASA Astrophysics Data System (ADS)

Kadota, Michio; Sannomiya, Toshio; Tanaka, Shuji

2017-07-01

This paper reports wide band rejection filters and tunable rejection filters using ultra-wideband zeroth shear mode (SH0) plate wave resonators. The frequency range covers the digital TV band in Japan that runs from 470 to 710 MHz. This range has been chosen to meet the TV white space cognitive radio requirements of rejection filters. Wide rejection bands were obtained using several resonators with different frequencies. Tunable rejection filters were demonstrated using Si diodes connected to the band rejection filters. Wide tunable ranges as high as 31% were measured by applying a DC voltage to the Si diodes.

Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection

NASA Astrophysics Data System (ADS)

Nan, Tianxiang; Hui, Yu; Rinaldi, Matteo; Sun, Nian X.

2013-06-01

High sensitivity magnetoelectric sensors with their electromechanical resonance frequencies < 200 kHz have been recently demonstrated using magnetostrictive/piezoelectric magnetoelectric heterostructures. In this work, we demonstrate a novel magnetoelectric nano-electromechanical systems (NEMS) resonator with an electromechanical resonance frequency of 215 MHz based on an AlN/(FeGaB/Al2O3) × 10 magnetoelectric heterostructure for detecting DC magnetic fields. This magnetoelectric NEMS resonator showed a high quality factor of 735, and strong magnetoelectric coupling with a large voltage tunable sensitivity. The admittance of the magnetoelectric NEMS resonator was very sensitive to DC magnetic fields at its electromechanical resonance, which led to a new detection mechanism for ultra-sensitive self-biased RF NEMS magnetoelectric sensor with a low limit of detection of DC magnetic fields of ~300 picoTelsa. The magnetic/piezoelectric heterostructure based RF NEMS magnetoelectric sensor is compact, power efficient and readily integrated with CMOS technology, which represents a new class of ultra-sensitive magnetometers for DC and low frequency AC magnetic fields.

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

NASA Astrophysics Data System (ADS)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

Phosphorus Enrichment as a New Composition in the Solid Electrolyte Interphase of High-Voltage Cathodes and Its Effects on Battery Cycling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Pengfei; Zheng, Jianming; Kuppan, Saravanan

2015-11-10

Immersion of a solid into liquid often leads to the modification of both the structure and chemistry of surface of the solid, which subsequently affects the chemical and physical properties of the system. For the case of the rechargeable lithium ion battery, such a surface modification is termed as solid electrolyte interphase (SEI) layer, which has been perceived to play critical role for the stable operation of the batteries. However, the structure and chemical composition of SEI layer and its spatial distribution and dependence on the battery operating condition remain unclear. By using aberration corrected scanning transmission electron microscopy coupledmore » with ultra-high sensitive energy dispersive x-ray spectroscopy, we probed the structure and chemistry of SEI layer on several high voltage cathodes. We show that layer-structured cathodes, when cycled at a high cut off voltage, can form a P-rich SEI layer on their surface, which is a direct evidence of Li-salt (LiPF6) decomposition. Our systematical investigations indicate such cathode/Li-salt side reaction shows strong dependence on structure of the cathode materials, operating voltage and temperature, indicating the feasibility of SEI engineering. These findings provide us valuable insights into the complex interface between the high-voltage cathode and the electrolyte.« less

Voltage assisted asymmetric nanoscale wear on ultra-smooth diamond like carbon thin films at high sliding speeds

PubMed Central

Rajauria, Sukumar; Schreck, Erhard; Marchon, Bruno

2016-01-01

The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interface, particularly for nano or micro scale devices operating at high sliding speeds. A complete investigation of the electrochemical effects on high sliding speed interfaces requires a precise monitoring of both the associated wear and surface chemical reactions at the interface. Here, we demonstrate that head-disk interface inside a commercial magnetic storage hard disk drive provides a unique system for such studies. The results obtained shows that the voltage assisted electrochemical wear lead to asymmetric wear on either side of sliding interface. PMID:27150446

Voltage assisted asymmetric nanoscale wear on ultra-smooth diamond like carbon thin films at high sliding speeds

NASA Astrophysics Data System (ADS)

Rajauria, Sukumar; Schreck, Erhard; Marchon, Bruno

2016-05-01

The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interface, particularly for nano or micro scale devices operating at high sliding speeds. A complete investigation of the electrochemical effects on high sliding speed interfaces requires a precise monitoring of both the associated wear and surface chemical reactions at the interface. Here, we demonstrate that head-disk interface inside a commercial magnetic storage hard disk drive provides a unique system for such studies. The results obtained shows that the voltage assisted electrochemical wear lead to asymmetric wear on either side of sliding interface.

Small Cold Temperature Instrument Packages

NASA Astrophysics Data System (ADS)

Clark, P. E.; Millar, P. S.; Yeh, P. S.; Feng, S.; Brigham, D.; Beaman, B.

We are developing a small cold temperature instrument package concept that integrates a cold temperature power system with ultra low temperature ultra low power electronics components and power supplies now under development into a 'cold temperature surface operational' version of a planetary surface instrument package. We are already in the process of developing a lower power lower temperature version for an instrument of mutual interest to SMD and ESMD to support the search for volatiles (the mass spectrometer VAPoR, Volatile Analysis by Pyrolysis of Regolith) both as a stand alone instrument and as part of an environmental monitoring package. We build on our previous work to develop strategies for incorporating Ultra Low Temperature/Ultra Low Power (ULT/ULP) electronics, lower voltage power supplies, as well as innovative thermal design concepts for instrument packages. Cryotesting has indicated that our small Si RHBD CMOS chips can deliver >80% of room temperature performance at 40K (nominal minimum lunar surface temperature). We leverage collaborations, past and current, with the JPL battery development program to increase power system efficiency in extreme environments. We harness advances in MOSFET technology that provide lower voltage thresholds for power switching circuits incorporated into our low voltage power supply concept. Conventional power conversion has a lower efficiency. Our low power circuit concept based on 'synchronous rectification' could produce stable voltages as low as 0.6 V with 85% efficiency. Our distributed micro-battery-based power supply concept incorporates cold temperature power supplies operating with a 4 V or 8 V battery. This work will allow us to provide guidelines for applying the low temperature, low power system approaches generically to the widest range of surface instruments.

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-09-19

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less

Analysis of partial discharge activity by a conducting particle in liquid nitrogen under AC voltages adopting UHF technique

NASA Astrophysics Data System (ADS)

Sarathi, R.; Giridhar, A. V.; Sethupathi, K.

2010-01-01

Liquid nitrogen (LN 2) is used as an insulant as well as coolant in high temperature superconducting power equipments. Particle contamination in liquid nitrogen is one of the major cause for formation of partial discharges during operation. An attempt has been made in the present study to understand the feasibility of using Ultra High Frequency (UHF) sensors for identification of partial discharge (PD) formed due to particle movement in liquid nitrogen under AC voltages. It is observed that the partial discharge formed in LN 2 radiates UHF signal. The results of the study indicate that the conventional partial discharge measurement and UHF peak amplitude measurement have direct correlation. The Phase Resolved Partial Discharge (PRPD) analysis indicates that the partial discharge formed due to particle movement occurs in the entire phase windows of the AC voltage. The PD magnitude increases with increase in applied voltage. The frequency content of UHF signal generated due to particle movement in liquid nitrogen under AC voltages lies in the range of 0.5-1.5 GHz. The UHF sensor output signal analyzed using spectrum analyzer by operating it in zero-span mode, indicates that burst type PD occurs due to particle movement.

A study of dielectric breakdown along insulators surrounding conductors in liquid argon

DOE PAGES

Lockwitz, Sarah; Jostlein, Hans

2016-03-22

High voltage breakdown in liquid argon is an important concern in the design of liquid argon time projection chambers, which are often used as neutrino and dark matter detectors. We have made systematic measurements of breakdown voltages in liquid argon along insulators surrounding negative rod electrodes where the breakdown is initiated at the anode. The measurements were performed in an open cryostat filled with commercial grade liquid argon exposed to air, and not the ultra-pure argon required for electron drift. While not addressing all high voltage concerns in liquid argon, these measurements have direct relevance to the design of highmore » voltage feedthroughs especially for averting the common problem of flash-over breakdown. The purpose of these tests is to understand the effects of materials, of breakdown path length, and of surface topology for this geometry and setup. We have found that the only material-specific effects are those due to their permittivity. We have found that the breakdown voltage has no dependence on the length of the exposed insulator. Lastly, a model for the breakdown mechanism is presented that can help inform future designs.« less

Imaging interactions of metal oxide nanoparticles with macrophage cells by ultra-high resolution scanning electron microscopy techniques.

PubMed

Plascencia-Villa, Germán; Starr, Clarise R; Armstrong, Linda S; Ponce, Arturo; José-Yacamán, Miguel

2012-11-01

Use of engineered metal oxide nanoparticles in a plethora of biological applications and custom products has warned about some possible dose-dependent cytotoxic effects. Macrophages are key components of the innate immune system used to study possible toxic effects and internalization of different nanoparticulate materials. In this work, ultra-high resolution field emission scanning electron microscopy (FE-SEM) was used to offer new insights into the dynamical processes of interaction of nanomaterials with macrophage cells dosed with different concentrations of metal oxide nanoparticles (CeO(2), TiO(2) and ZnO). The versatility of FE-SEM has allowed obtaining a detailed characterization of processes of adsorption and endocytosis of nanoparticles, by using advanced analytical and imaging techniques on complete unstained uncoated cells, including secondary electron imaging, high-sensitive backscattered electron imaging, X-ray microanalysis and stereoimaging. Low voltage BF/DF-STEM confirmed nanoparticle adsorption and internalization into endosomes of CeO(2) and TiO(2), whereas ZnO develop apoptosis after 24 h of interaction caused by dissolution and invasion of cell nucleus. Ultra-high resolution scanning electron microscopy techniques provided new insights into interactions of inorganic nanoparticles with macrophage cells with high spatial resolution.

A micro-power precision amplifier for converting the output of light sensors to a voltage readable by miniature data loggers.

PubMed

Phillips, Nathan; Bond, Barbara J.

1999-07-01

To record photosynthetically active radiation (PAR) simultaneously at a number of points throughout a forest canopy, we developed a simple, inexpensive (< $10 US) current-to-voltage converter that processes the current generated by a photodiode radiation sensor to a voltage range that is recordable with a miniature data logger. The converter, which weighs less than 75 g and has a volume of only 100 cm(3), is built around an ultra-low power OP-90 precision operational amplifier, which consumes less than 0.5 mA at 9 V when converting the output of a Li-Cor LI-190SA quantum sensor exposed to photosynthetically active radiation (PAR) of 2500 &mgr;mol m(-2) s(-1) or only 5 &mgr;A in low light. A small 9-V battery thus powers the amplifier for more than 1000 h of continuous operation. Correlations between photometer readings and voltage output from the current-to-voltage converter were high and linear at both high and low PAR. Sixteen Li-Cor LI-190SA quantum sensors each equipped with current-to-voltage converters and connected to a miniature data logger were deployed in the upper branches of a Panamanian tropical rainforest canopy. Each unit performed reliably during a one- or two-week evaluation.

Atmospheric pressure reaction cell for operando sum frequency generation spectroscopy of ultrahigh vacuum grown model catalysts

NASA Astrophysics Data System (ADS)

Roiaz, Matteo; Pramhaas, Verena; Li, Xia; Rameshan, Christoph; Rupprechter, Günther

2018-04-01

A new custom-designed ultrahigh vacuum (UHV) chamber coupled to a UHV and atmospheric-pressure-compatible spectroscopic and catalytic reaction cell is described, which allows us to perform IR-vis sum frequency generation (SFG) vibrational spectroscopy during catalytic (kinetic) measurements. SFG spectroscopy is an exceptional tool to study vibrational properties of surface adsorbates under operando conditions, close to those of technical catalysis. This versatile setup allows performing surface science, SFG spectroscopy, catalysis, and electrochemical investigations on model systems, including single crystals, thin films, and deposited metal nanoparticles, under well-controlled conditions of gas composition, pressure, temperature, and potential. The UHV chamber enables us to prepare the model catalysts and to analyze their surface structure and composition by low energy electron diffraction and Auger electron spectroscopy, respectively. Thereafter, a sample transfer mechanism moves samples under UHV to the spectroscopic cell, avoiding air exposure. In the catalytic cell, SFG spectroscopy and catalytic tests (reactant/product analysis by mass spectrometry or gas chromatography) are performed simultaneously. A dedicated sample manipulation stage allows the model catalysts to be examined from LN2 temperature to 1273 K, with gaseous reactants in a pressure range from UHV to atmospheric. For post-reaction analysis, the SFG cell is rapidly evacuated and samples are transferred back to the UHV chamber. The capabilities of this new setup are demonstrated by benchmark results of CO adsorption on Pt and Pd(111) single crystal surfaces and of CO adsorption and oxidation on a ZrO2 supported Pt nanoparticle model catalyst grown by atomic layer deposition.

Thin film studies toward improving the performance of accelerator electron sources

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identical 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(+/-0.05) x 10--13 Torr L s--1 cm--2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(+/-0.05) x 10--13 Torr L s--1 cm--2 following an initial 90 °C bake and 2(+/-20) x 10--16 Torr L s --1 cm--2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at --175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.

Thin film studies toward improving the performance of accelerator electron sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, Md Abdullah

Future electron accelerators require DC high voltage photoguns to operate beyond the present state of the art to conduct new experiments that require ultra-bright electron beams with high average current and higher bunch charge. To meet these demands, the accelerators must demonstrate improvements in a number of photogun areas including vacuum, field emission elimination in high voltage electrodes, and photocathodes. This dissertation illustrates how these improvements can be achieved by the application of suitable thin-films to the photogun structure for producing ultra-bright electron beams. This work is composed of three complementary studies. First, the outgassing rates of three nominally identicalmore » 304L stainless steel vacuum chambers were studied to determine the effects of chamber coatings (silicon and titanium nitride) and heat treatments. For an uncoated stainless steel chamber, the diffusion limited outgassing was taken over by the recombination limited process as soon as a low outgassing rate of ~1.79(±0.05) x 10- 13 Torr L s -1 cm -2 was achieved. An amorphous silicon coating on the stainless steel chambers exhibited recombination limited behavior and any heat treatment became ineffective in reducing the outgassing rate. A TiN coated chamber yielded the smallest apparent outgassing rate of all the chambers: 6.44(±0.05) x 10 -13 Torr L s -1 cm -2 following an initial 90 °C bake and 2(±20) x 10 -16 Torr L s -1 cm -2 following the final bake in the series. This perceived low outgassing rate was attributed to the small pumping nature of TiN coating itself. Second, the high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, were compared to that of bare aluminum electrodes and electrodes manufactured from titanium alloy (Ti-6Al-4V). This study suggests that aluminum electrodes, coated with TiN, could simplify the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at -- 175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.« less

A multipurpose ultra-high vacuum-compatible chamber for in situ X-ray surface scattering studies over a wide range of temperature and pressure environment conditions

NASA Astrophysics Data System (ADS)

Ferrer, P.; Rubio-Zuazo, J.; Heyman, C.; Esteban-Betegón, F.; Castro, G. R.

2013-03-01

A low/high temperature (60-1000K) and pressure (10-10-3x103 mbar) "baby chamber", specially adapted to the grazing-incidence X-ray scattering station, has been designed, developed and installed at the Spanish CRG BM25 SpLine beamline at European Synchrotron Radiation Facility. The chamber has a cylindrical form with 100 mm of diameter, built on a 360° beryllium nipple of 150 mm height. The UHV equipment and a turbo pump are located on the upper part of the chamber to leave a wide solid angle for exploring reciprocal space. The chamber features 4 CF16 and 5 CF40 ports for electrical feed through and leak valves, ion gun, etc. The heat exchanger is a customized compact LN2 (or LHe) continuous flow cryostat. The sample is mounted on a Mo support on the heat exchanger, which has in the back side a BORALECTRIC® Heater Elements. Experiments of surfaces/interfaces/ multilayer materials, thin films or single crystals in a huge variety of environments can be performed, also in situ studies of growth or evolution of the samples. Data measurement can be collected with a punctual and a bi-dimensional detector, being possible to simultaneously use them.

Vacuum system of the compact Energy Recovery Linac

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honda, T., E-mail: tohru.honda@kek.jp; Tanimoto, Y.; Nogami, T.

2016-07-27

The compact Energy Recovery Linac (cERL), a test accelerator to establish important technologies demanded for future ERL-based light sources, was constructed in late 2013 at KEK. The accelerator was successfully commissioned in early 2014, and demonstrated beam circulation with energy recovery. In the cERL vacuum system, low-impedance vacuum components are required to circulate high-intensity, low-emittance and short-bunch electron beams. We therefore developed ultra-high-vacuum (UHV)-compatible flanges that can connect beam tubes seamlessly, and employed retractable beam monitors, namely, a movable Faraday cup and screen monitors. In most parts of the accelerator, pressures below 1×10{sup −7} Pa are required to mitigate beam-gasmore » interactions. Particularly, near the photocathode electron gun and the superconducting (SC) cavities, pressures below 1×10{sup −8} Pa are required. The beam tubes in the sections adjoining the SC cavities were coated with non-evaporable getter (NEG) materials, to reduce gas condensation on the cryo-surfaces. During the accelerator commissioning, stray magnetic fields from the permanent magnets of some cold cathode gauges (CCGs) were identified as a source of the disturbance to the beam orbit. Magnetic shielding was specially designed as a remedy for this issue.« less

Ultra-flexible Piezoelectric Devices Integrated with Heart to Harvest the Biomechanical Energy

PubMed Central

Lu, Bingwei; Chen, Ying; Ou, Dapeng; Chen, Hang; Diao, Liwei; Zhang, Wei; Zheng, Jun; Ma, Weiguo; Sun, Lizhong; Feng, Xue

2015-01-01

Power supply for medical implantable devices (i.e. pacemaker) always challenges not only the surgery but also the battery technology. Here, we report a strategy for energy harvesting from the heart motion by using ultra-flexible piezoelectric device based on lead zirconate titanate (PZT) ceramics that has most excellent piezoelectricity in commercial materials, without any burden or damage to hearts. Experimental swine are selected for in vivo test with different settings, i.e. opened chest, close chest and awake from anesthesia, to simulate the scenario of application in body due to their hearts similar to human. The results show the peak-to-peak voltage can reach as high as 3 V when the ultra-flexible piezoelectric device is fixed from left ventricular apex to right ventricle. This demonstrates the possibility and feasibility of fully using the biomechanical energy from heart motion in human body for sustainably driving implantable devices. PMID:26538375

Ultra-flexible Piezoelectric Devices Integrated with Heart to Harvest the Biomechanical Energy

NASA Astrophysics Data System (ADS)

Lu, Bingwei; Chen, Ying; Ou, Dapeng; Chen, Hang; Diao, Liwei; Zhang, Wei; Zheng, Jun; Ma, Weiguo; Sun, Lizhong; Feng, Xue

2015-11-01

Power supply for medical implantable devices (i.e. pacemaker) always challenges not only the surgery but also the battery technology. Here, we report a strategy for energy harvesting from the heart motion by using ultra-flexible piezoelectric device based on lead zirconate titanate (PZT) ceramics that has most excellent piezoelectricity in commercial materials, without any burden or damage to hearts. Experimental swine are selected for in vivo test with different settings, i.e. opened chest, close chest and awake from anesthesia, to simulate the scenario of application in body due to their hearts similar to human. The results show the peak-to-peak voltage can reach as high as 3 V when the ultra-flexible piezoelectric device is fixed from left ventricular apex to right ventricle. This demonstrates the possibility and feasibility of fully using the biomechanical energy from heart motion in human body for sustainably driving implantable devices.

Highly sensitive protein detection by combination of atomic force microscopy fishing with charge generation and mass spectrometry analysis.

PubMed

Ivanov, Yuri D; Pleshakova, Tatyana; Malsagova, Krystina; Kozlov, Andrey; Kaysheva, Anna; Kopylov, Arthur; Izotov, Alexander; Andreeva, Elena; Kanashenko, Sergey; Usanov, Sergey; Archakov, Alexander

2014-10-01

An approach combining atomic force microscopy (AFM) fishing and mass spectrometry (MS) analysis to detect proteins at ultra-low concentrations is proposed. Fishing out protein molecules onto a highly oriented pyrolytic graphite surface coated with polytetrafluoroethylene film was carried out with and without application of an external electric field. After that they were visualized by AFM and identified by MS. It was found that injection of solution leads to charge generation in the solution, and an electric potential within the measuring cell is induced. It was demonstrated that without an external electric field in the rapid injection input of diluted protein solution the fishing is efficient, as opposed to slow fluid input. The high sensitivity of this method was demonstrated by detection of human serum albumin and human cytochrome b5 in 10(-17) -10(-18) m water solutions. It was shown that an external negative voltage applied to highly oriented pyrolytic graphite hinders the protein fishing. The efficiency of fishing with an external positive voltage was similar to that obtained without applying any voltage. © 2014 FEBS.

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

NASA Astrophysics Data System (ADS)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Unexpected mechanical properties of very dry Berea sandstone near 45°C

NASA Astrophysics Data System (ADS)

Miller, R. A.; Darling, T. W.; TenCate, J. A.; Johnson, P. A.

2011-12-01

An understanding of the nonlinear and hysteretic behavior of porous rocks is important for seismic studies and geologic carbon sequestration applications. However, the fundamental processes responsible for such behavior are poorly understood, including interactions involving adsorbed water and bulk carbon dioxide. Water has been shown to affect the nonlinear mechanical properties of porous rocks, both in high humidity conditions and in low pressure conditions where only a monolayer of water is present on rock grain surfaces [1, 2]. To study the impact of small quantities of adsorbed water on the nonlinear behavior of sandstone, we compare nonlinear resonant ultrasound spectroscopy (NRUS) and time-of-flight modulation (TOFM) measurements [3] on a Berea sandstone core before and after removing bulk water from the sample. Water is removed through extended exposure to ultra high vacuum (UHV) conditions. At the sample's driest state, we achieve a partial pressure of water below 10-8 Torr at room temperature. Periodic measurements record acoustic data as the rock is slowly heated from room temperature to 55°C in UHV. Measurements made after several months of exposure to UHV conditions show behavior we have not previously observed. We report an unexpected sharp increase in Q-1 above 45°C, suggesting we have reduced the concentration of water to a low enough level to affect the sample's mechanical properties. Nonlinear effects are still present when the sample is at its driest state below 45°C, in agreement with previous work [4], which indicates water is not the sole contributor to nonlinearity in porous rock. We are also studying the effect of adding carbon dioxide or argon gas to the dry specimen. We present our acoustic data and propose a model for the impact of adsorbed water on the attenuation of porous rock. [We gratefully acknowledge support from the Nevada Terawatt Facility at the University of Nevada, Reno, and from the Geosciences Research Program of the DOE Office of Basic Energy Sciences]. [1] B. R. Tittmann, L. Ahlberg, and J. Curnow, "Internal friction and velocity measurements," Proc. of 7th Lunar Science Conference , pp. 3123-3132, 1997. [2] K. E.-A. Van Den Abeele, J. Carmeliet, P. A. Johnson, and B. Zinszner, "Influence of water saturation on the nonlinear elastic mesoscopic response in Earth materials and the implications to the mechanism of nonlinearity," Journal of Geophysical Research 107, p. 2121, June 2002. [3] "Dynamic Measures of Elastic Nonlinear (Anelastic) Behavior: Dynamic Acousto-Elasticity Testing (DAET)," G. Renaud, P-Y Le Bas, J. A. TenCate, T. J. Ulrich, J. W. Carey, J. Han, T.W. Darling and P. A. Johnson, AGU Fall Meeting, Dec. 2011. [4] "Water and CO2 chemistry influences on the mechanical integrity of rocks," T.W. Darling, P-Y Le Bas, J. W. Carey, P. A. Johnson and R. A. Miller, AGU Fall Meeting, Dec. 2010.

Walking peptide on Au(110) surface: Origin and nature of interfacial process

NASA Astrophysics Data System (ADS)

Humblot, V.; Tejeda, A.; Landoulsi, J.; Vallée, A.; Naitabdi, A.; Taleb, A.; Pradier, C.-M.

2014-10-01

IGF tri-peptide adsorption on Au(110)-(1 × 2) under Ultra High Vacuum (UHV) conditions has been investigated using surface science techniques such as synchrotron based Angle Resolved X-ray Photoemission Spectroscopy (AR-PES or AR-XPS), Low Energy Electron Diffraction (LEED) and Scanning Tunnelling Microscopy (STM). The behaviour of IGF molecules has been revealed to be coverage dependent; at low coverage, there is formation of islands presenting a chiral self-organised molecular network with a (4 2, - 3 2) symmetry as shown by Low Energy Electron Diffraction (LEED) and Scanning Tunnelling Microscopy (STM) on the unaltered Au(110)-(1 × 2) reconstruction, suggesting significant intermolecular interactions. When the coverage is increased, the islands grow bigger, and one can observe the disappearance of the self-organised network, along with a remarkable destruction of the (1 × 2) substrate reconstruction, as shown by STM. The effect of IGF on the surface gold atoms has been further confirmed by angle-resolved photoemission measurements which suggest a modification of the electronic states with the (1 × 2) symmetry. The resulting molecular organisation, and overall the gold surface disorganisation, prove a strong surface-molecule interaction, which may be probably be explained by a covalent bonding.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Detwiler, Michael D.; Majumdar, Paulami; Gu, Xiang-Kui

Changes in surface chemistry and morphology of Re–Pt surfaces synthesized by ultra-high vacuum chemical vapor deposition (UHV-CVD) of Re on Pt(111) were studied by a combination of experiment and density functional theory (DFT) modeling. A Re oxide formed following exposure of the as-deposited Re to 1 × 10- 6 mbar oxygen at 600–673 K. Subsequent annealing at 973 K resulted in oxygen desorption and a decrease in Re coverage, as calculated by XPS and as observed by STM. This observation was explained by DFT calculations which showed that a clean Pt surface slab with subsurface Re is thermodynamically more favorablemore » than Pt(111) with Re on the surface. DFT calculations also predicted weaker O and CO binding on this surface compared to both monometallic Pt and Re, and HREELS and temperature desorption measurements suggested that O binds weakly to the Pt skin surface, with oxygen on the Pt skin desorbing from this surface following annealing at 373 K. Trends in adsorption energies were consistent with DFT calculated d-band centers of surface atoms for model Pt–Re structures. Comparison of HREELS data and STM images with DFT calculated vibrational frequencies have been used to understand the structure of rhenium oxide on Pt(111).« less

Reaction of propane with the ordered NiO/Rh(1 1 1) studied by XPS and LEISS

NASA Astrophysics Data System (ADS)

Zhang, Hong; Wang, Wenyi; Chen, Mingshu; Wan, Huilin

2018-05-01

Nickel oxide has been reported to be an efficient catalyst for oxidative dehydrogenation of propane (ODP) to propene at low temperature. In this paper, ultrathin NiO films with various thickness were prepared on a Rh(1 1 1) surface and characterized by X-ray photoemission spectroscopy (XPS) and Low-energy ion scattering spectroscopy (LEISS). Results show that NiO forms a two-dimensional (2D) network with a O-Ni-O structure at submonolayer coverages, and a bulk-like NiO at multilayer coverages. The submonolayer NiO films are less stable than the thick ones when annealed in ultra-high vacuum (UHV) due to the strong interaction with the Rh substrate. Propane was dosed onto the model surfaces at different temperatures to investigate the activation of propane and reactivity of NiO films with propane. The reactions of propane with the thin and thick NiO films are significantly different. Propane activates on the O defect sites for the thick NiO films, whereas activation occurs on the interface of nickel oxide and substrate for the thin films with a higher activity.

AN ENGINEERING SOLUTION TO THE RHIC BEAM ABORT KICKER UPGRADE.

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHANG,W.ROSER,T.SANDBERG,J.TAN,Y.ET AL.

2004-05-23

The Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory is the world largest superconducting accelerator for nuclear energy research. Particle beams traveling in opposite directions in two accelerator rings, Blue and Yellow, collide at six interaction regions to create phenomena of the early universe. There are more than 1700 superconducting magnets and very sophisticate and delicate large detectors inside the RHIC tunnel. With high beam intensity and ultra high beam energy, an inadvertent loss of beam can result severe damage to the superconducting magnets and detectors. Beam abort kickers are used to remove beam safely from the ring. Themore » large inductive load, high current capability, short beam gap, and high reliability are the challenging issues of this system design. With high intensity and high momentum beam operation, it is desirable to have all high voltage modulators located outside of RHIC tunnel. However, to generate 22 kA output current per modulator with fast rise time, a conventional low impedance PFN and matched transmission cable design can push the operation voltage easily into 100 kV range. The large quantity of high voltage pulse transmission cables required by conventional design is another difficult issue. Therefore, the existing system has all ten high voltage modulators located inside RHIC tunnel. More than a hundred plastic packaged mineral oil filled high voltage capacitors raise serious concerns of fire and smoking threats. Other issues, such as kicker misfire, device availability in the future, and inaccessibility during operation, also demand an engineering solution for the future upgrade. In this paper, we investigate an unconventional approach to meet the technical challenges of RHIC beam abort system. The proposed design has all modulators outside of the RHIC tunnel. It will transmit output pulse through high voltage cables. The modulators will utilize solid-state switches, and operate at a maximum voltage in 30 to 50 kV range.« less

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Q.; Liang, Y. X.; Ferry, D.

2014-07-07

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz{sup 1∕2} and 20 aA/Hz{sup 1∕2}, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.

Surface charge transport in Silicon (111) nanomembranes

NASA Astrophysics Data System (ADS)

Hu, Weiwei; Scott, Shelley; Jacobson, Rb; Savage, Donald; Lagally, Max; The Lagally Group Team

Using thin sheets (``nanomembranes'') of atomically flat crystalline semiconductors, we are able to investigate surface electronic properties, using back-gated van der Pauw measurement in UHV. The thinness of the sheet diminishes the bulk contribution, and the back gate tunes the conductivity until the surface dominates, enabling experimental determination of surface conductance. We have previously shown that Si(001) surface states interact with the body of the membrane altering the conductivity of the system. Here, we extended our prior measurements to Si(111) in order to probe the electronic transport properties of the Si(111) 7 ×7 reconstruction. Sharp (7 ×7) LEED images attest to the cleanliness of the Si(111) surface. Preliminary results reveal a highly conductive Si(111) 7 ×7 surface with a sheet conductance Rs of order of μS/ □, for 110nm thick membrane, and Rs is a very slowly varying function of the back gate voltage. This is in strong contrast to Si(001) nanomembranes which have a minimum conductance several orders of magnitude lower, and hints to the metallic nature of the Si(111) surface. Research supported by DOE.

AC to DC Bridgeless Boost Converter for Ultra Low Input Energy Harvesting

NASA Astrophysics Data System (ADS)

Dawam, A. H. A.; Muhamad, M.

2018-03-01

This paper presents design of circuit which converts low input AC voltage to a higher output DC voltage. A buck-boost topology and boost topology are combined to condition cycle of an AC input voltage. the unique integration of a combining circuit of buck-boost and boost circuit have been proposed in order to introduce a new direct ac-dc power converter topology without conventional diode bridge rectifier. The converter achieved to convert a milli-volt scale of input AC voltage into a volt scale of output DC voltages which is from 400mV to 3.3V.

Controlling hydrogenation activity and selectivity of bimetallic surfaces and catalysts

NASA Astrophysics Data System (ADS)

Murillo, Luis E.

Studies of bimetallic systems are of great interest in catalysis due to the novel properties that they often show in comparison with the parent metals. The goals of this dissertation are: (1) to expand the studies of self-hydrogenation and hydrogenation reactions on bimetallic surfaces under ultra high vacuum conditions (UHV) using different hydrocarbon as probe molecules; (2) to attempt to correlate the surface science findings with supported catalyst studies under more realistic conditions; and (3) to investigate the competitive hydrogenation of C=C versus C=O bonds on Pt(111) modified by different 3d transition metals. Hydrogenation studies using temperature programmed desorption (TPD) on Ni/Pt(111) bimetallic surfaces have demonstrated an enhancement in the low temperature hydrogenation activity relative to that of clean Pt(111). This novel hydrogenation pathway can be achieved under UHV conditions by controlling the structures of the bimetallic surfaces. A low temperature hydrogenation activity of 1-hexene and 1-butene has been observed on a Pt-Ni-Pt(111) subsurface structure, where Ni atoms are mainly present on the second layer of the Pt(111) single crystal. These results are in agreement with previous studies of self-hydrogenation and hydrogenation of cyclohexene. However, a much higher dehydrogenation activity is observed in the reaction of cyclohexene to produce benzene, demonstrating that the hydrocarbon structure has an effect on the reaction pathways. On the other hand, self-hydrogenation of 1-butene is not observed on the Pt-Ni-Pt(111) surface, indicating that the chain length (or molecular weight) has a significant effect on the selfhydrogenation activity. The gas phase reaction of cyclohexene on Ni/Pt supported on alumina catalysts has also shown a higher self-hydrogenation activity in comparison with the same reaction performed on supported monometallic catalysts. The effects of metal loading and impregnation sequence of the metal precursors are also discussed. Chemisorption, TPD, FTIR using a batch reactor for the self-hydrogenation of cyclohexene and CO adsorbed on the bimetallic surfaces were carried out to correlate surface science findings with experiments on supported bimetallic catalysts. To expand the studies on the effect of bimetallic structures on hydrogenation reactions, molecules with multiple functional groups such as alpha,beta-unsaturated aldehydes were also investigated. Studies of selective hydrogenation of a,ss-unsaturated aldehydes toward the desired unsaturated alcohols are of interest for the production of fine chemicals and pharmaceuticals. In these compounds, competitive hydrogenation of the C=C and C=O bonds occurs. TPD and HREELS experiments of acrolein (CH2=CH-CH=O) on Pt-based bimetallic surfaces are performed to investigate their effects on the hydrogenation activity of the C-O bond. The production of the desired unsaturated alcohol, allyl alcohol, has been observed for the first time on Pt-Ni-Pt(111) under UHV conditions. However, the propionaldehyde yield is five times higher than the allyl alcohol yield. Thus, a preferential isomerization reaction of allyl alcohol to propionaldehyde is very likely to occur on the Pt-Ni-Pt(111) surface as observed on the desorption studies of allyl alcohol on this surface. The hydrogenation of acrolein is also carried out under UHV conditions on other 3d-transition metal/Pt(111) surfaces such as Co/Pt(111), Fe/Pt(111), and Cu/Pt(111). So far, the highest activity and allyl alcohol yield are found on the Pt-Ni-Pt(111) surface with pre-adsorbed hydrogen.

Propositions for the Analysis of Commutation Phenomena and Modeling of Universal Motors Using the State Function Method

NASA Astrophysics Data System (ADS)

Niwa, Yuta; Akiyama, Yuji; Naruta, Tomokazu

We carried out FEM simulations for modeling ultra-high-speed universal motors by using the state function method and analyzed the phenomenon of commutator sparking, the characteristics of the air gap surface, and the contact condition or contact resistance of the brushes and commutator bars. Thus, we could quantitatively analyze commutator sparking and investigate the configuration of the iron core. The results of FEM analysis were used to develop a model for predicting the configuration of the iron core and for estimating the electromotive force generated by the transformer, armature reaction field, spark voltage, contact resistance between the rotating brushes, and changes in the gap permeance. The results of our simulation were experimental results. This confirmed the validity of our analysis method. Thus, an ultra-high-speed, high-capacity of 1.5kw motor rotating at 30,000rpm can be designed for use in vacuum cleaners.

Atomic Beam Scattering Methods to Study Overlayer Structures and H-Surface Interaction Relevant to Astrophysics

NASA Astrophysics Data System (ADS)

Lin, Jingsu

In this thesis we present results of experimental methods for studying surface structures of ultra-thin films and describe a new apparatus to study the recombination of atomic hydrogen on well characterized low temperature surface using atomic and molecular beam methods. We have used atomic beam scattering (ABS) to characterize the growth of mercury and lead overlayers on Cu(001) surface. The structures of ordered phases have been identified using ABS and low-energy electron diffraction (LEED). A model to analyze diffraction data from these phases is presented. The new apparatus we are going to describe includes a high performance atomic hydrogen source using radio-frequency (RF) dissociation. The dissociation efficiency can be as high as 90% in the optimized pressure range. An atomic hydrogen beam line has been added to our ultra-high vacuum (UHV) scattering apparatus. We have also designed and constructed a low temperature sample manipulator for experiments at liquid helium temperatures. The manipulator has one degree of freedom of rotation and the capability of heating the sample to 700K and cooling down to 12K. The first sample studied was a single graphite surface. We have used a He beam to characterize the sample surface and to monitor deposition of H on the sample surface in real time. A series of "adsorption curves" have been obtained at different temperature and doses. We found that at temperatures below 16K, both H and H_2 have formed a partial layer on the surface. From adsorption curve, we deduce that the initial sticking coefficient for H is about 0.06 when surface at 16K. When the H beam is interrupted, the He specularly reflected beam recovers partially, indicating that hydrogen atoms desorb, while others remain on the surface. The residual coverage of H is estimated to be about 2% of a monolayer.

P-type doping of GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wong, Raechelle Kimberly

2000-04-01

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C.more » The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.« less

Relationship between microstructural and magnetic properties of PrCo-based films prepared by the vacuum evaporation method

NASA Astrophysics Data System (ADS)

Fersi, R.; Bouzidi, W.; Bezergheanu, A.; Cizmas, C. B.; Bessais, L.; Mliki, N.

2018-04-01

In this work, Ce2Ni7 type structural PrCo-based films were deposited on Si(1 0 0) substrate by ultra-high (UHV) vacuum evaporation process. The structural and magnetic properties of these films have been performed using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM) and magnetic force microscopy (MFM) techniques. Two effects on structural and magnetic properties of PrCo films have been investigated: the effect of the annealing temperature (Ta) and the effect of the variation of the magnetic X-layer thickness. The as deposited PrCo films have a magnetic coercivity (Hc) of about 40-100 Oe. But after annealing at 600 °C, Hc has increased hight about 9.5 kOe for PrCo(X = 20 nm) and 10.2 kOe for PrCo(X = 50 nm) were observed. The magnetic properties were affected by the thickness due to the morphology, also the relationship between the intergrain exchange coupling (IEC), the size and quantity of the PrCo grains. The hight extrinsic properties of Hc = 10.2 kOe, maximum energy product (BH)max of 5.12 MGOe and remanence ratio Mr /Ms = 0.53 are reported for the PrCo(X = 50 nm) films. These properties are highly desirable for extremely high-density magnetic recording media applications.

Surface science approach to Pt/carbon model catalysts: XPS, STM and microreactor studies

NASA Astrophysics Data System (ADS)

Motin, Abdul Md.; Haunold, Thomas; Bukhtiyarov, Andrey V.; Bera, Abhijit; Rameshan, Christoph; Rupprechter, Günther

2018-05-01

Pt nanoparticles supported on carbon are an important technological catalyst. A corresponding model catalyst was prepared by physical vapor deposition (PVD) of Pt on sputtered HOPG (highly oriented pyrolytic graphite). The carbon substrate before and after sputtering as well as the Pt/HOPG system before and after Pt deposition and annealing were examined by XPS and STM. This yielded information on the surface density of defects, which serve as nucleation centres for Pt, and on the size distribution (mean size/height) of the Pt nanoparticles. Two different model catalysts were prepared with mean sizes of 2.0 and 3.6 nm, both turned out to be stable upon UHV-annealing to 300 °C. After transfer into a UHV-compatible flow microreactor and subsequent cleaning in UHV and under mbar pressure, the catalytic activity of the Pt/HOPG model system for ethylene hydrogenation was examined under atmospheric pressure flow conditions. This enabled to determine temperature-dependent conversion rates, turnover frequencies (TOFs) and activation energies. The catalytic results obtained are in line with the characteristics of technological Pt/C, demonstrating the validity of the current surface science based model catalyst approach.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Rapid qualitative and quantitative analysis of proanthocyanidin oligomers and polymers by ultra-performance liquid chromatography – tandem mass spectrometry (UPLC-MS/MS)

USDA-ARS?s Scientific Manuscript database

We developed a rapid method with ultra-performance liquid chromatography – tandem mass spectrometry (UPLC-MS/MS) for the qualitative and quantitative analysis of plant proanthocyanidins (PAs) directly from crude plant extracts. The method utilizes a range of cone voltages to achieve the depolymeriza...

Collagen production of osteoblasts revealed by ultra-high voltage electron microscopy.

PubMed

Hosaki-Takamiya, Rumiko; Hashimoto, Mana; Imai, Yuichi; Nishida, Tomoki; Yamada, Naoko; Mori, Hirotaro; Tanaka, Tomoyo; Kawanabe, Noriaki; Yamashiro, Takashi; Kamioka, Hiroshi

2016-09-01

In the bone, collagen fibrils form a lamellar structure called the "twisted plywood-like model." Because of this unique structure, bone can withstand various mechanical stresses. However, the formation of this structure has not been elucidated because of the difficulty of observing the collagen fibril production of the osteoblasts via currently available methods. This is because the formation occurs in the very limited space between the osteoblast layer and bone matrix. In this study, we used ultra-high-voltage electron microscopy (UHVEM) to observe collagen fibril production three-dimensionally. UHVEM has 3-MV acceleration voltage and enables us to use thicker sections. We observed collagen fibrils that were beneath the cell membrane of osteoblasts elongated to the outside of the cell. We also observed that osteoblasts produced collagen fibrils with polarity. By using AVIZO software, we observed collagen fibrils produced by osteoblasts along the contour of the osteoblasts toward the bone matrix area. Immediately after being released from the cell, the fibrils run randomly and sparsely. But as they recede from the osteoblast, the fibrils began to run parallel to the definite direction and became thick, and we observed a periodical stripe at that area. Furthermore, we also observed membrane structures wrapped around filamentous structures inside the osteoblasts. The filamentous structures had densities similar to the collagen fibrils and a columnar form and diameter. Our results suggested that collagen fibrils run parallel and thickly, which may be related to the lateral movement of the osteoblasts. UHVEM is a powerful tool for observing collagen fibril production.

Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

NASA Astrophysics Data System (ADS)

Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

2015-05-01

Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

Mobility overestimation due to gated contacts in organic field-effect transistors

PubMed Central

Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

2016-01-01

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

GaN-based metamaterial terahertz bandpass filter design: tunability and ultra-broad passband attainment.

PubMed

Khodaee, M; Banakermani, M; Baghban, H

2015-10-10

Engineering metamaterial-based devices such as terahertz bandpass filters (BPFs) play a definitive role in advancement of terahertz technology. In this article, we propose a design procedure to obtain a considerably broadband terahertz BPF at a normal incidence; it shows promising filtering characteristics, including a wide passband of ∼1.34  THz at a central frequency of 1.17 THz, a flat top in a broad band, and high transmission, compared to previous reports. Then, exploiting the voltage-dependent carrier density control in an AlGaN/GaN heterostructure with a Schottky gate configuration, we investigate the tuning of the transmission properties in a narrow-band terahertz filter. A combination of the ultra-wide, flat-top BPF in series with the tunable, narrow band filter designed in the current study offers the ability to tune the desired resonance frequency along with high out-of-band rejection and the suppression of unwanted resonances in a large spectral range. The proposed structure exhibits a frequency tunability of 103 GHz for a voltage change between -8 and 2 V, and a transmission amplitude change of ∼0.51. This scheme may open up a route for the improved design of terahertz filters and modulators.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

NASA Astrophysics Data System (ADS)

Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

2015-11-01

Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

Cryogenic ultra-low-noise SiGe transistor amplifier.

PubMed

Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

2011-10-01

An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

Design and demonstration of ultra-fast W-band photonic transmitter-mixer and detectors for 25 Gbits/sec error-free wireless linking.

PubMed

Chen, Nan-Wei; Shi, Jin-Wei; Tsai, Hsuan-Ju; Wun, Jhih-Min; Kuo, Fong-Ming; Hesler, Jeffery; Crowe, Thomas W; Bowers, John E

2012-09-10

A 25 Gbits/s error-free on-off-keying (OOK) wireless link between an ultra high-speed W-band photonic transmitter-mixer (PTM) and a fast W-band envelope detector is demonstrated. At the transmission end, the high-speed PTM is developed with an active near-ballistic uni-traveling carrier photodiode (NBUTC-PD) integrated with broadband front-end circuitry via the flip-chip bonding technique. Compared to our previous work, the wireless data rate is significantly increased through the improvement on the bandwidth of the front-end circuitry together with the reduction of the intermediate-frequency (IF) driving voltage of the active NBUTC-PD. The demonstrated PTM has a record-wide IF modulation (DC-25 GHz) and optical-to-electrical fractional bandwidths (68-128 GHz, ~67%). At the receiver end, the demodulation is realized with an ultra-fast W-band envelope detector built with a zero-bias Schottky barrier diode with a record wide video bandwidth (37 GHz) and excellent sensitivity. The demonstrated PTM is expected to find applications in multi-gigabit short-range wireless communication.

Ultrananocrystalline Diamond Cantilever Wide Dynamic Range Acceleration/Vibration /Pressure Sensor

DOEpatents

Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.; Auciello, Orlando

2003-09-02

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

DOEpatents

Krauss, Alan R [Naperville, IL; Gruen, Dieter M [Downers Grove, IL; Pellin, Michael J [Naperville, IL; Auciello, Orlando [Bolingbrook, IL

2002-07-23

An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume

In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less

High pressure reaction cell and transfer mechanism for ultrahigh vacuum spectroscopic chambers

NASA Astrophysics Data System (ADS)

Nelson, A. E.; Schulz, K. H.

2000-06-01

A novel high pressure reaction cell and sample transfer mechanism for ultrahigh vacuum (UHV) spectroscopic chambers is described. The design employs a unique modification of a commercial load-lock transfer system to emulate a tractable microreactor. The reaction cell has an operating pressure range of <1×10-4 to 1000 Torr and can be evacuated to UHV conditions to enable sample transfer into the spectroscopic chamber. Additionally, a newly designed sample holder equipped with electrical and thermocouple contacts is described. The sample holder is capable of resistive specimen heating to 400 and 800 °C with current requirements of 14 A (2 V) and 25 A (3.5 V), respectively. The design enables thorough material science characterization of catalytic reactions and the surface chemistry of catalytic materials without exposing the specimen to atmospheric contaminants. The system is constructed primarily from readily available commercial equipment allowing its rapid implementation into existing laboratories.

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

PubMed Central

Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

2015-01-01

The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p+-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I–V ) curves combined with the temperature dependence of the I–V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole–Frenkel (P–F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM. PMID:26508086

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.

PubMed

Jiang, Xiaofan; Ma, Zhongyuan; Xu, Jun; Chen, Kunji; Xu, Ling; Li, Wei; Huang, Xinfan; Feng, Duan

2015-10-28

The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationship between the Si dangling bonds and the N/Si ratio x for the a-SiNx:H films, which ensures that the programming current can be reduced to less than 1 μA by increasing the value of x. Theoretically calculated current-voltage (I-V) curves combined with the temperature dependence of the I-V characteristics confirm that, for the low-resistance state (LRS), the Si dangling bond conduction paths obey the trap-assisted tunneling model. In the high-resistance state (HRS), conduction is dominated by either hopping or Poole-Frenkel (P-F) processes. Our introduction of hydrogen in the a-SiNx:H layer provides a new way to control the Si dangling bond conduction paths, and thus opens up a research field for ultra-low power Si-based RRAM.

Study on Ultra-deep Azimuthal Electromagnetic Resistivity LWD Tool by Influence Quantification on Azimuthal Depth of Investigation and Real Signal

NASA Astrophysics Data System (ADS)

Li, Kesai; Gao, Jie; Ju, Xiaodong; Zhu, Jun; Xiong, Yanchun; Liu, Shuai

2018-05-01

This paper proposes a new tool design of ultra-deep azimuthal electromagnetic (EM) resistivity logging while drilling (LWD) for deeper geosteering and formation evaluation, which can benefit hydrocarbon exploration and development. First, a forward numerical simulation of azimuthal EM resistivity LWD is created based on the fast Hankel transform (FHT) method, and its accuracy is confirmed under classic formation conditions. Then, a reasonable range of tool parameters is designed by analyzing the logging response. However, modern technological limitations pose challenges to selecting appropriate tool parameters for ultra-deep azimuthal detection under detectable signal conditions. Therefore, this paper uses grey relational analysis (GRA) to quantify the influence of tool parameters on voltage and azimuthal investigation depth. After analyzing thousands of simulation data under different environmental conditions, the random forest is used to fit data and identify an optimal combination of tool parameters due to its high efficiency and accuracy. Finally, the structure of the ultra-deep azimuthal EM resistivity LWD tool is designed with a theoretical azimuthal investigation depth of 27.42-29.89 m in classic different isotropic and anisotropic formations. This design serves as a reliable theoretical foundation for efficient geosteering and formation evaluation in high-angle and horizontal (HA/HZ) wells in the future.

Imaging interactions of metal oxide nanoparticles with macrophage cells by ultra-high resolution scanning electron microscopy techniques†

PubMed Central

Plascencia-Villa, Germán; Starr, Clarise R.; Armstrong, Linda S.; Ponce, Arturo

2016-01-01

Use of engineered metal oxide nanoparticles in a plethora of biological applications and custom products has warned about some possible dose-dependent cytotoxic effects. Macrophages are key components of the innate immune system used to study possible toxic effects and internalization of different nanoparticulate materials. In this work, ultra-high resolution field emission scanning electron microscopy (FE-SEM) was used to offer new insights into the dynamical processes of interaction of nanomaterials with macrophage cells dosed with different concentrations of metal oxide nanoparticles (CeO2, TiO2 and ZnO). The versatility of FE-SEM has allowed obtaining a detailed characterization of processes of adsorption and endocytosis of nanoparticles, by using advanced analytical and imaging techniques on complete unstained uncoated cells, including secondary electron imaging, high-sensitive backscattered electron imaging, X-ray microanalysis and stereoimaging. Low voltage BF/DF-STEM confirmed nanoparticle adsorption and internalization into endosomes of CeO2 and TiO2, whereas ZnO develop apoptosis after 24 h of interaction caused by dissolution and invasion of cell nucleus. Ultra-high resolution scanning electron microscopy techniques provided new insights into interactions of inorganic nanoparticles with macrophage cells with high spatial resolution. PMID:23023106

Proposal and Development of a High Voltage Variable Frequency Alternating Current Power System for Hybrid Electric Aircraft

NASA Technical Reports Server (NTRS)

Sadey, David J.; Taylor, Linda M.; Beach, Raymond F.

2016-01-01

The development of ultra-efficient commercial vehicles and the transition to low-carbon emission propulsion are seen as thrust paths within NASA Aeronautics. A critical enabler to these paths comes in the form of hybrid-electric propulsion systems. For megawatt-class systems, the best power system topology for these hybrid-electric propulsion systems is debatable. Current proposals within NASA and the Aero community suggest using a combination of AC and DC for power transmission. This paper proposes an alternative to the current thought model through the use of a primarily high voltage AC power generation, transmission, and distribution systems, supported by the Convergent Aeronautics Solutions (CAS) Project. This system relies heavily on the use of dual-fed induction machines, which provide high power densities, minimal power conversion, and variable speed operation. The paper presents background on the project along with the system architecture, development status and preliminary results.

Development of an environmental high-voltage electron microscope for reaction science.

PubMed

Tanaka, Nobuo; Usukura, Jiro; Kusunoki, Michiko; Saito, Yahachi; Sasaki, Katuhiro; Tanji, Takayoshi; Muto, Shunsuke; Arai, Shigeo

2013-02-01

Environmental transmission electron microscopy and ultra-high resolution electron microscopic observation using aberration correctors have recently emerged as topics of great interest. The former method is an extension of the so-called in situ electron microscopy that has been performed since the 1970s. Current research in this area has been focusing on dynamic observation with atomic resolution under gaseous atmospheres and in liquids. Since 2007, Nagoya University has been developing a new 1-MV high voltage (scanning) transmission electron microscope that can be used to observe nanomaterials under conditions that include the presence of gases, liquids and illuminating lights, and it can be also used to perform mechanical operations to nanometre-sized areas as well as electron tomography and elemental analysis by electron energy loss spectroscopy. The new instrument has been used to image and analyse various types of samples including biological ones.

A 155-dB Dynamic Range Current Measurement Front End for Electrochemical Biosensing.

PubMed

Dai, Shanshan; Perera, Rukshan T; Yang, Zi; Rosenstein, Jacob K

2016-10-01

An integrated current measurement system with ultra wide dynamic range is presented and fabricated in a 180-nm CMOS technology. Its dual-mode design provides concurrent voltage and frequency outputs, without requiring an external clock source. An integrator-differentiator core provides a voltage output with a noise floor of 11.6 fA/ [Formula: see text] and a -3 dB cutoff frequency of 1.4 MHz. It is merged with an asynchronous current-to-frequency converter, which generates an output frequency linearly proportional to the input current. Together, the voltage and frequency outputs yield a current measurement range of 155 dB, spanning from 204 fA (100 Hz) or 1.25 pA (10 kHz) to 11.6 μA. The proposed architecture's low noise, wide bandwidth, and wide dynamic range make it ideal for measurements of highly nonlinear electrochemical and electrophysiological systems.

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

NASA Astrophysics Data System (ADS)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

DOE PAGES

Cartiglia, N.; Staiano, A.; Sola, V.; ...

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup includedmore » three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.« less

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

NASA Astrophysics Data System (ADS)

Cartiglia, N.; Staiano, A.; Sola, V.; Arcidiacono, R.; Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R.; Bellora, A.; Durando, S.; Mandurrino, M.; Minafra, N.; Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E.; Grabas, H.; Gruey, B.; Labitan, C. A.; Losakul, R.; Luce, Z.; McKinney-Martinez, F.; Sadrozinski, H. F.-W.; Seiden, A.; Spencer, E.; Wilder, M.; Woods, N.; Zatserklyaniy, A.; Pellegrini, G.; Hidalgo, S.; Carulla, M.; Flores, D.; Merlos, A.; Quirion, D.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Zavrtanik, M.

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hackley, Jason D.; Kislitsyn, Dmitry A.; Beaman, Daniel K.

We report on the design and operation of a cryogenic ultra-high vacuum (UHV) scanning tunneling microscope (STM) coupled to a closed-cycle cryostat (CCC). The STM is thermally linked to the CCC through helium exchange gas confined inside a volume enclosed by highly flexible rubber bellows. The STM is thus mechanically decoupled from the CCC, which results in a significant reduction of the mechanical noise transferred from the CCC to the STM. Noise analysis of the tunneling current shows current fluctuations up to 4% of the total current, which translates into tip-sample distance variations of up to 1.5 picometers. This noisemore » level is sufficiently low for atomic-resolution imaging of a wide variety of surfaces. To demonstrate this, atomic-resolution images of Au(111) and NaCl(100)/Au(111) surfaces, as well as of carbon nanotubes deposited on Au(111), were obtained. Thermal drift analysis showed that under optimized conditions, the lateral stability of the STM scanner can be as low as 0.18 Å/h. Scanning Tunneling Spectroscopy measurements based on the lock-in technique were also carried out, and showed no detectable presence of noise from the closed-cycle cryostat. Using this cooling approach, temperatures as low as 16 K at the STM scanner have been achieved, with the complete cool-down of the system typically taking up to 12 h. These results demonstrate that the constructed CCC-coupled STM is a highly stable instrument capable of highly detailed spectroscopic investigations of materials and surfaces at the atomic scale.« less

A Piezoelectric Unimorph Deformable Mirror Concept by Wafer Transfer for Ultra Large Space Telescopes

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Shcheglov, Kirill

2002-01-01

Future concepts of ultra large space telescopes include segmented silicon mirrors and inflatable polymer mirrors. Primary mirrors for these systems cannot meet optical surface figure requirements and are likely to generate over several microns of wavefront errors. In order to correct for these large wavefront errors, high stroke optical quality deformable mirrors are required. JPL has recently developed a new technology for transferring an entire wafer-level mirror membrane from one substrate to another. A thin membrane, 100 mm in diameter, has been successfully transferred without using adhesives or polymers. The measured peak-to-valley surface error of a transferred and patterned membrane (1 mm x 1 mm x 0.016 mm) is only 9 nm. The mirror element actuation principle is based on a piezoelectric unimorph. A voltage applied to the piezoelectric layer induces stress in the longitudinal direction causing the film to deform and pull on the mirror connected to it. The advantage of this approach is that the small longitudinal strains obtainable from a piezoelectric material at modest voltages are thus translated into large vertical displacements. Modeling is performed for a unimorph membrane consisting of clamped rectangular membrane with a PZT layer with variable dimensions. The membrane transfer technology is combined with the piezoelectric bimorph actuator concept to constitute a compact deformable mirror device with a large stroke actuation of a continuous mirror membrane, resulting in a compact A0 systems for use in ultra large space telescopes.

System to measure accurate temperature dependence of electric conductivity down to 20 K in ultrahigh vacuum.

PubMed

Sakai, C; Takeda, S N; Daimon, H

2013-07-01

We have developed the new in situ electrical-conductivity measurement system which can be operated in ultrahigh vacuum (UHV) with accurate temperature measurement down to 20 K. This system is mainly composed of a new sample-holder fixing mechanism, a new movable conductivity-measurement mechanism, a cryostat, and two receptors for sample- and four-probe holders. Sample-holder is pushed strongly against the receptor, which is connected to a cryostat, by using this new sample-holder fixing mechanism to obtain high thermal conductivity. Test pieces on the sample-holders have been cooled down to about 20 K using this fixing mechanism, although they were cooled down to only about 60 K without this mechanism. Four probes are able to be touched to a sample surface using this new movable conductivity-measurement mechanism for measuring electrical conductivity after making film on substrates or obtaining clean surfaces by cleavage, flashing, and so on. Accurate temperature measurement is possible since the sample can be transferred with a thermocouple and∕or diode being attached directly to the sample. A single crystal of Bi-based copper oxide high-Tc superconductor (HTSC) was cleaved in UHV to obtain clean surface, and its superconducting critical temperature has been successfully measured in situ. The importance of in situ measurement of resistance in UHV was demonstrated for this HTSC before and after cesium (Cs) adsorption on its surface. The Tc onset increase and the Tc offset decrease by Cs adsorption were observed.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring.

PubMed

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-09-20

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

PubMed Central

Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

2016-01-01

This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods. PMID:27657070

Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface

NASA Astrophysics Data System (ADS)

Kim, Ji Eun; No, Young Hyun; Kim, Joo Nam; Shin, Yong Seon; Kang, Won Tae; Kim, Young Rae; Kim, Kun Nyun; Kim, Yong Ho; Yu, Woo Jong

2017-05-01

Graphene has attracted a great deal of interest for applications in bio-sensing devices because of its ultra-thin structure, which enables strong electrostatic coupling with target molecules, and its excellent electrical mobility promising for ultra-fast sensing speeds. However, thickly stacked receptors on the graphene's surface interrupts electrostatic coupling between graphene and charged biomolecules, which can reduce the sensitivity of graphene biosensors. Here, we report a highly sensitive graphene biosensor by the monomolecular self-assembly of designed peptide protein receptors. The graphene channel was non-covalently functionalized using peptide protein receptors via the π-π interaction along the graphene's Bravais lattice, allowing ultra-thin monomolecular self-assembly through the graphene lattice. In thickness dependent characterization, a graphene sensor with a monomolecular receptor (thickness less than 3 nm) showed five times higher sensitivity and three times higher voltage shifts than graphene sensors with thick receptor stacks (thicknesses greater than 20 nm), which is attributed to excellent gate coupling between graphene and streptavidin via an ultrathin receptor insulator. In addition to having a fast-inherent response time (less than 0.6 s) based on fast binding speed between biotin and streptavidin, our graphene biosensor is a promising platform for highly sensitive real-time monitoring of biomolecules with high spatiotemporal resolution.

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y.; Nonaka, T.

2016-05-15

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films andmore » Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.« less

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations.

PubMed

Matsui, S; Mori, Y; Nonaka, T; Hattori, T; Kasamatsu, Y; Haraguchi, D; Watanabe, Y; Uchiyama, K; Ishikawa, M

2016-05-01

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

A cryogen-free low temperature scanning tunneling microscope capable of inelastic electron tunneling spectroscopy.

PubMed

Zhang, Shuai; Huang, Di; Wu, Shiwei

2016-06-01

The design and performance of a cryogen-free low temperature scanning tunneling microscope (STM) housed in ultrahigh vacuum (UHV) are reported. The cryogen-free design was done by directly integrating a Gifford-McMahon cycle cryocooler to a Besocke-type STM, and the vibration isolation was achieved by using a two-stage rubber bellow between the cryocooler and a UHV-STM interface with helium exchange gas cooling. A base temperature of 15 K at the STM was achieved, with a possibility to further decrease by using a cryocooler with higher cooling power and adding additional low temperature stage under the exchange gas interface. Atomically sharp STM images and high resolution dI/dV spectra on various samples were demonstrated. Furthermore, we reported the inelastic tunneling spectroscopy on a single carbon monoxide molecule adsorbed on Ag(110) surface with a cryogen-free STM for the first time. Being totally cryogen-free, the system not only saves the running cost significantly but also enables uninterrupted data acquisitions and variable temperature measurements with much ease. In addition, the system is capable of coupling light to the STM junction by a pair of lens inside the UHV chamber. We expect that these enhanced capabilities could further broaden our views to the atomic-scale world.

A cryogen-free low temperature scanning tunneling microscope capable of inelastic electron tunneling spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shuai; Huang, Di; Wu, Shiwei, E-mail: swwu@fudan.edu.cn

The design and performance of a cryogen-free low temperature scanning tunneling microscope (STM) housed in ultrahigh vacuum (UHV) are reported. The cryogen-free design was done by directly integrating a Gifford-McMahon cycle cryocooler to a Besocke-type STM, and the vibration isolation was achieved by using a two-stage rubber bellow between the cryocooler and a UHV-STM interface with helium exchange gas cooling. A base temperature of 15 K at the STM was achieved, with a possibility to further decrease by using a cryocooler with higher cooling power and adding additional low temperature stage under the exchange gas interface. Atomically sharp STM imagesmore » and high resolution dI/dV spectra on various samples were demonstrated. Furthermore, we reported the inelastic tunneling spectroscopy on a single carbon monoxide molecule adsorbed on Ag(110) surface with a cryogen-free STM for the first time. Being totally cryogen-free, the system not only saves the running cost significantly but also enables uninterrupted data acquisitions and variable temperature measurements with much ease. In addition, the system is capable of coupling light to the STM junction by a pair of lens inside the UHV chamber. We expect that these enhanced capabilities could further broaden our views to the atomic-scale world.« less

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Astrophysics Data System (ADS)

Dinetta, L. C.; Hannon, M. H.

1995-10-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.

1995-01-01

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Thermal latency adds to lesion depth after application of high-power short-duration radiofrequency energy: Results of a computer-modeling study.

PubMed

Irastorza, Ramiro M; d'Avila, Andre; Berjano, Enrique

2018-02-01

The use of ultra-short RF pulses could achieve greater lesion depth immediately after the application of the pulse due to thermal latency. A computer model of irrigated-catheter RF ablation was built to study the impact of thermal latency on the lesion depth. The results showed that the shorter the RF pulse duration (keeping energy constant), the greater the lesion depth during the cooling phase. For instance, after a 10-second pulse, lesion depth grew from 2.05 mm at the end of the pulse to 2.39 mm (17%), while after an ultra-short RF pulse of only 1 second the extra growth was 37% (from 2.22 to 3.05 mm). Importantly, short applications resulted in deeper lesions than long applications (3.05 mm vs. 2.39 mm, for 1- and 10-second pulse, respectively). While shortening the pulse duration produced deeper lesions, the associated increase in applied voltage caused overheating in the tissue: temperatures around 100 °C were reached at a depth of 1 mm in the case of 1- and 5-second pulses. However, since the lesion depth increased during the cooling period, lower values of applied voltage could be applied in short durations in order to obtain lesion depths similar to those in longer durations while avoiding overheating. The thermal latency phenomenon seems to be the cause of significantly greater lesion depth after short-duration high-power RF pulses. Balancing the applied total energy when the voltage and duration are changed is not the optimal strategy since short pulses can also cause overheating. © 2017 Wiley Periodicals, Inc.

Ultra low power consumption for self-oscillating nanoelectromechanical systems constructed by contacting two nanowires.

PubMed

Barois, T; Ayari, A; Vincent, P; Perisanu, S; Poncharal, P; Purcell, S T

2013-04-10

We report here the observation of a new self-oscillation mechanism in nanoelectromechanical systems (NEMS). A highly resistive nanowire was positioned to form a point-contact at a chosen vibration node of a silicon carbide nanowire resonator. Spontaneous and robust mechanical oscillations arise when a sufficient DC voltage is applied between the two nanowires. An original model predicting the threshold voltage is used to estimate the piezoresistivity of the point-contact in agreement with the observations. The measured input power is in the pW-range which is the lowest reported value for such systems. The simplicity of the contacting procedure and the low power consumption open a new route for integrable and low-loss self-excited NEMS devices.

Engineering the switching dynamics of TiOx-based RRAM with Al doping

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

2016-07-01

Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Highly-flexible, ultra-thin, and transparent single-layer graphene/silver composite electrodes for organic light emitting diodes

NASA Astrophysics Data System (ADS)

Li, Kun; Wang, Hu; Li, Huiying; Li, Ye; Jin, Guangyong; Gao, Lanlan; Marco, Mazzeo; Duan, Yu

2017-08-01

Transparent conductive electrode (TCE) platforms are required in many optoelectronic devices, including organic light emitting diodes (OLEDs). To date, indium tin oxide based electrodes are widely used in TCEs but they still have few limitations in term of achieving flexible OLEDs and display techniques. In this paper, highly-flexible and ultra-thin TCEs were fabricated for use in OLEDs by combining single-layer graphene (SLG) with thin silver layers of only several nanometers in thickness. The as-prepared SLG + Ag (8 nm) composite electrodes showed low sheet resistances of 8.5 Ω/□, high stability over 500 bending cycles, and 74% transmittance at 550 nm wavelength. Furthermore, SLG + Ag composite electrodes employed as anodes in OLEDs delivered turn-on voltages of 2.4 V, with luminance exceeding 1300 cd m-2 at only 5 V, and maximum luminance reaching up 40 000 cd m-2 at 9 V. Also, the devices could work normally under less than the 1 cm bending radius.

High precision triangular waveform generator

DOEpatents

Mueller, Theodore R.

1983-01-01

An ultra-linear ramp generator having separately programmable ascending and descending ramp rates and voltages is provided. Two constant current sources provide the ramp through an integrator. Switching of the current at current source inputs rather than at the integrator input eliminates switching transients and contributes to the waveform precision. The triangular waveforms produced by the waveform generator are characterized by accurate reproduction and low drift over periods of several hours. The ascending and descending slopes are independently selectable.

High-precision triangular-waveform generator

DOEpatents

Mueller, T.R.

1981-11-14

An ultra-linear ramp generator having separately programmable ascending and decending ramp rates and voltages is provided. Two constant current sources provide the ramp through an integrator. Switching of the current at current source inputs rather than at the integrator input eliminates switching transients and contributes to the waveform precision. The triangular waveforms produced by the waveform generator are characterized by accurate reproduction and low drift over periods of several hours. The ascending and descending slopes are independently selectable.

Design of an integrated thermoelectric generator power converter for ultra-low power and low voltage body energy harvesters aimed at ExG active electrodes

NASA Astrophysics Data System (ADS)

Ataei, Milad; Robert, Christian; Boegli, Alexis; Farine, Pierre-André

2015-10-01

This paper describes a detailed design procedure for an efficient thermal body energy harvesting integrated power converter. The procedure is based on the examination of power loss and power transfer in a converter for a self-powered medical device. The efficiency limit for the system is derived and the converter is optimized for the worst case scenario. All optimum system parameters are calculated respecting the transducer constraints and the application form factor. Circuit blocks including pulse generators are implemented based on the system specifications and optimized converter working frequency. At this working condition, it has been demonstrated that the wide area capacitor of the voltage doubler, which provides high voltage switch gating, can be eliminated at the expense of wider switches. With this method, measurements show that 54% efficiency is achieved for just a 20 mV transducer output voltage and 30% of the chip area is saved. The entire electronic board can fit in one EEG or ECG electrode, and the electronic system can convert the electrode to an active electrode.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

NASA Astrophysics Data System (ADS)

Di Pendina, G.; Zianbetov, E.; Beigne, E.

2015-05-01

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

Self-assembled ultra small ZnO nanocrystals for dye-sensitized solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patra, Astam K.; Dutta, Arghya; Bhaumik, Asim, E-mail: msab@iacs.res.in

2014-07-01

We demonstrate a facile chemical approach to produce self-assembled ultra-small mesoporous zinc oxide nanocrystals using sodium salicylate (SS) as a template under hydrothermal conditions. These ZnO nanomaterials have been successfully fabricated as a photoanode for the dye-sensitized solar cell (DSSC) in the presence of N719 dye and iodine–triiodide electrolyte. The structural features, crystallinity, purity, mesophase and morphology of the nanostructure ZnO are investigated by several characterization tools. N{sub 2} sorption analysis revealed high surface areas (203 m{sup 2} g{sup −1}) and narrow pore size distributions (5.1–5.4 nm) for different samples. The mesoporous structure and strong photoluminescence facilitates the high dyemore » loading at the mesoscopic void spaces and light harvesting in DSSC. By utilizing this ultra-small ZnO photoelectrode with film thickness of about 7 μm in the DSSC with an open-circuit voltage (V{sub OC}) of 0.74 V, short-circuit current density (J{sub SC}) of 3.83 mA cm{sup −2} and an overall power conversion efficiency of 1.12% has been achieved. - Graphical abstract: Ultra-small ZnO nanocrystals have been synthesized with sodium salicylate as a template and using it as a photoanode in a dye-sensitized solar cell 1.12% power conversion efficiency has been observed. - Highlights: • Synthesis of self-assembled ultra-small mesoporous ZnO nanocrystals by using sodium salicylate as a template. • Mesoporous ZnO materials have high BET surface areas and void space. • ZnO nanoparticles serve as a photoanode for the dye-sensitized solar cell (DSSC). • Using ZnO nanocrystals as photoelectrode power conversion efficiency of 1.12% has been achieved.« less

Design and performance of a Near Ultra High Vacuum Helium Ion Microscope

NASA Astrophysics Data System (ADS)

Poelsema, Bene; van Gastel, Raoul; Hlawacek, Gregor; Zandvliet, Harold J. W.

2012-02-01

The advent of He Ion Microscopy (HIM) as a new nanoscopic technique to image materials has enabled a new look at materials that is based on the interaction of swift light ions with matter. Initial HIM instruments have demonstrated high-resolution imaging, combined with great surface sensitivity, the ability to neutralize charge very efficiently, and with enhanced materials contrast when ion induced secondary electrons are used for imaging. To achieve ultimate performance, the chamber vacuum of the existing platform may be improved. For instance, carbon deposits due to beam interaction are readily seen due to the surface sensitivity of the technique. At high current densities the sharply focused beam may very efficiently decompose residual hydrocarbons. Not only can this obscure a clear view of the sample, thereby negating the benefits of the small spot size, it also limits the available acquisition time. This has proven extremely useful for nanopatterning for sensors, and other device fabrication applications at the sub-10nm level. However, it is undesirable when the instrument is used for materials characterization. We will discuss the basic considerations that went into the design of a Near-UHV He Ion Microscope [1]. First applications that the instrument was used for will be highlighted and its impact in surface physics and other research areas that require increased imaging sensitivity will be discussed. [4pt] [1] R.van Gastel et al, Microscopy and Microanalysis 17, 928-929 (2011)

High-performance radial AMTEC cell design for ultra-high-power solar AMTEC systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendricks, T.J.; Huang, C.

1999-07-01

Alkali Metal Thermal to Electric Conversion (AMTEC) technology is rapidly maturing for potential application in ultra-high-power solar AMTEC systems required by potential future US Air Force (USAF) spacecraft missions in medium-earth and geosynchronous orbits (MEO and GEO). Solar thermal AMTEC power systems potentially have several important advantages over current solar photovoltaic power systems in ultra-high-power spacecraft applications for USAF MEO and GEO missions. This work presents key aspects of radial AMTEC cell design to achieve high cell performance in solar AMTEC systems delivering larger than 50 kW(e) to support high power USAF missions. These missions typically require AMTEC cell conversionmore » efficiency larger than 25%. A sophisticated design parameter methodology is described and demonstrated which establishes optimum design parameters in any radial cell design to satisfy high-power mission requirements. Specific relationships, which are distinct functions of cell temperatures and pressures, define critical dependencies between key cell design parameters, particularly the impact of parasitic thermal losses on Beta Alumina Solid Electrolyte (BASE) area requirements, voltage, number of BASE tubes, and system power production for both maximum power-per-BASE-area and optimum efficiency conditions. Finally, some high-level system tradeoffs are demonstrated using the design parameter methodology to establish high-power radial cell design requirements and philosophy. The discussion highlights how to incorporate this methodology with sophisticated SINDA/FLUINT AMTEC cell modeling capabilities to determine optimum radial AMTEC cell designs.« less

Isolation, identification, and characterization of novel arenaviruses, the etiological agents of boid inclusion body disease.

PubMed

Hetzel, Udo; Sironen, Tarja; Laurinmäki, Pasi; Liljeroos, Lassi; Patjas, Aino; Henttonen, Heikki; Vaheri, Antti; Artelt, Annette; Kipar, Anja; Butcher, Sarah J; Vapalahti, Olli; Hepojoki, Jussi

2013-10-01

Boid inclusion body disease (BIBD) is a progressive, usually fatal disease of constrictor snakes, characterized by cytoplasmic inclusion bodies (IB) in a wide range of cell types. To identify the causative agent of the disease, we established cell cultures from BIBD-positive and -negative boa constrictors. The IB phenotype was maintained in cultured cells of affected animals, and supernatants from these cultures caused the phenotype in cultures originating from BIBD-negative snakes. Viruses were purified from the supernatants by ultracentrifugation and subsequently identified as arenaviruses. Purified virus also induced the IB phenotype in naive cells, which fulfilled Koch's postulates in vitro. One isolate, tentatively designated University of Helsinki virus (UHV), was studied in depth. Sequencing confirmed that UHV is a novel arenavirus species that is distinct from other known arenaviruses including those recently identified in snakes with BIBD. The morphology of UHV was established by cryoelectron tomography and subtomographic averaging, revealing the trimeric arenavirus spike structure at 3.2-nm resolution. Immunofluorescence, immunohistochemistry, and immunoblotting with a polyclonal rabbit antiserum against UHV and reverse transcription-PCR (RT-PCR) revealed the presence of genetically diverse arenaviruses in a large cohort of snakes with BIBD, confirming the causative role of arenaviruses. Some snakes were also found to carry arenavirus antibodies. Furthermore, mammalian cells (Vero E6) were productively infected with UHV, demonstrating the potential of arenaviruses to cross species barriers. In conclusion, we propose the newly identified lineage of arenaviruses associated with BIBD as a novel taxonomic entity, boid inclusion body disease-associated arenaviruses (BIBDAV), in the family Arenaviridae.

Isolation, Identification, and Characterization of Novel Arenaviruses, the Etiological Agents of Boid Inclusion Body Disease

PubMed Central

Hetzel, Udo; Sironen, Tarja; Laurinmäki, Pasi; Liljeroos, Lassi; Patjas, Aino; Henttonen, Heikki; Vaheri, Antti; Artelt, Annette; Kipar, Anja; Butcher, Sarah J.; Vapalahti, Olli

2013-01-01

Boid inclusion body disease (BIBD) is a progressive, usually fatal disease of constrictor snakes, characterized by cytoplasmic inclusion bodies (IB) in a wide range of cell types. To identify the causative agent of the disease, we established cell cultures from BIBD-positive and -negative boa constrictors. The IB phenotype was maintained in cultured cells of affected animals, and supernatants from these cultures caused the phenotype in cultures originating from BIBD-negative snakes. Viruses were purified from the supernatants by ultracentrifugation and subsequently identified as arenaviruses. Purified virus also induced the IB phenotype in naive cells, which fulfilled Koch's postulates in vitro. One isolate, tentatively designated University of Helsinki virus (UHV), was studied in depth. Sequencing confirmed that UHV is a novel arenavirus species that is distinct from other known arenaviruses including those recently identified in snakes with BIBD. The morphology of UHV was established by cryoelectron tomography and subtomographic averaging, revealing the trimeric arenavirus spike structure at 3.2-nm resolution. Immunofluorescence, immunohistochemistry, and immunoblotting with a polyclonal rabbit antiserum against UHV and reverse transcription-PCR (RT-PCR) revealed the presence of genetically diverse arenaviruses in a large cohort of snakes with BIBD, confirming the causative role of arenaviruses. Some snakes were also found to carry arenavirus antibodies. Furthermore, mammalian cells (Vero E6) were productively infected with UHV, demonstrating the potential of arenaviruses to cross species barriers. In conclusion, we propose the newly identified lineage of arenaviruses associated with BIBD as a novel taxonomic entity, boid inclusion body disease-associated arenaviruses (BIBDAV), in the family Arenaviridae. PMID:23926354

An Ultra-Low Voltage Analog Front End for Strain Gauge Sensory System Application in 0.18µm CMOS

NASA Astrophysics Data System (ADS)

Edward, Alexander; Chan, Pak Kwong

This paper presents analysis and design of a new ultra-low voltage analog front end (AFE) dedicated to strain sensor applications. The AFE, designed in 0.18µm CMOS process, features a chopper-stabilized instrumentation amplifier (IA), a balanced active MOSFET-C 2nd order low pass filter (LPF), a clock generator and a voltage booster which operate at supply voltage (Vdd) of 0.6V. The designed IA achieves 30dB of closed-loop gain, 101dB of common-mode rejection ratio (CMRR) at 50Hz, 80dB of power-supply rejection ratio (PSRR) at 50Hz, thermal noise floor of 53.4 nV/√Hz, current consumption of 14µA, and noise efficiency factor (NEF) of 9.7. The high CMRR and rail-to-rail output swing capability is attributed to a new low voltage realization of the active-bootstrapped technique using a pseudo-differential gain-boosting operational transconductance amplifier (OTA) and proposed current-driven bulk (CDB) biasing technique. An output capacitor-less low-dropout regulator (LDO), with a new fast start-up LPF technique, is used to regulate this 0.6V supply from a 0.8-1.0V energy harvesting power source. It achieves power supply rejection (PSR) of 42dB at frequency of 1MHz. A cascode compensated pseudo differential amplifier is used as the filter's building block for low power design. The filter's single-ended-to-balanced converter is implemented using a new low voltage amplifier with two-stage common-mode cancellation. The overall AFE was simulated to have 65.6dB of signal-to-noise ratio (SNR), total harmonic distortion (THD) of less than 0.9% for a 100Hz sinusoidal maximum input signal, bandwidth of 2kHz, and power consumption of 51.2µW. Spectre RF simulations were performed to validate the design using BSIM3V3 transistor models provided by GLOBALFOUNDRIES 0.18µm CMOS process.

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Storti, G.; Culik, J.; Wrigley, C.

1980-01-01

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Ultra High Voltage Propellant Isolators and Insulators for JIMO Ion Thrusters

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Gaier, James R.; Hung, Ching-Cheh; Walters, Patty A.; Sechkar, Ed; Panko, Scott; Kamiotis, Christina A.

2004-01-01

Within NASA's Project Prometheus, high specific impulse ion thrusters for electric propulsion of spacecraft for the proposed Jupiter Icy Moon Orbiter (JIMO) mission to three of Jupiter's moons: Callisto, Ganymede and Europa will require high voltage operation to meet mission propulsion. The anticipated approx.6,500 volt net ion energy will require electrical insulation and propellant isolation which must exceed that used successfully by the NASA Solar Electric Propulsion Technology Readiness (NSTAR) Deep Space 1 mission thruster by a factor of approx.6. Xenon propellant isolator prototypes that operate at near one atmosphere and prototypes that operate at low pressures (<100 Torr) have been designed and are being tested for suitability to the JIMO mission requirements. Propellant isolators must be durable to Paschen breakdown, sputter contamination, high temperature, and high voltage while operating for factors longer duration than for the Deep Space 1 Mission. Insulators used to mount the thrusters as well as those needed to support the ion optics have also been designed and are under evaluation. Isolator and insulator concepts, design issues, design guidelines, fabrication considerations and performance issues are presented. The objective of the investigation was to identify candidate isolators and insulators that are sufficiently robust to perform durably and reliably during the proposed JIMO mission.

Full membrane spanning self-assembled monolayers as model systems for UHV-based studies of cell-penetrating peptides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franz, Johannes; Graham, Daniel J.; Schmüser, Lars

2015-03-01

Biophysical studies of the interaction of peptides with model membranes provide a simple yet effective approach to understand the transport of peptides and peptide based drug carriers across the cell membrane. Therein, the authors discuss the use of self-assembled monolayers fabricated from the full membrane-spanning thiol (FMST) 3-((14-((4'-((5-methyl-1-phenyl-35-(phytanyl)oxy-6,9,12,15,18,21,24,27,30,33,37-undecaoxa-2,3-dithiahenpentacontan-51-yl)oxy)-[1,1'-biphenyl]-4-yl)oxy)tetradecyl)oxy)-2-(phytanyl)oxy glycerol for ultrahigh vacuum (UHV) based experiments. UHV-based methods such as electron spectroscopy and mass spectrometry can provide important information about how peptides bind and interact with membranes, especially with the hydrophobic core of a lipid bilayer. Moreover, near-edge x-ray absorption fine structure spectra and x-ray photoelectron spectroscopy (XPS) data showed thatmore » FMST forms UHV-stable and ordered films on gold. XPS and time of flight secondary ion mass spectrometry depth profiles indicated that a proline-rich amphipathic cell-penetrating peptide, known as sweet arrow peptide is located at the outer perimeter of the model membrane.« less

Selective Pyroelectric Detection of Millimetre Waves Using Ultra-Thin Metasurface Absorbers

PubMed Central

Kuznetsov, Sergei A.; Paulish, Andrey G.; Navarro-Cía, Miguel; Arzhannikov, Andrey V.

2016-01-01

Sensing infrared radiation is done inexpensively with pyroelectric detectors that generate a temporary voltage when they are heated by the incident infrared radiation. Unfortunately the performance of these detectors deteriorates for longer wavelengths, leaving the detection of, for instance, millimetre-wave radiation to expensive approaches. We propose here a simple and effective method to enhance pyroelectric detection of the millimetre-wave radiation by combining a compact commercial infrared pyro-sensor with a metasurface-enabled ultra-thin absorber, which provides spectrally- and polarization-discriminated response and is 136 times thinner than the operating wavelength. It is demonstrated that, due to the small thickness and therefore the thermal capacity of the absorber, the detector keeps the high response speed and sensitivity to millimetre waves as the original infrared pyro-sensor does against the regime of infrared detection. An in-depth electromagnetic analysis of the ultra-thin resonant absorbers along with their complex characterization by a BWO-spectroscopy technique is presented. Built upon this initial study, integrated metasurface absorber pyroelectric sensors are implemented and tested experimentally, showing high sensitivity and very fast response to millimetre-wave radiation. The proposed approach paves the way for creating highly-efficient inexpensive compact sensors for spectro-polarimetric applications in the millimetre-wave and terahertz bands. PMID:26879250

Circuit design advances for ultra-low power sensing platforms

NASA Astrophysics Data System (ADS)

Wieckowski, Michael; Dreslinski, Ronald G.; Mudge, Trevor; Blaauw, David; Sylvester, Dennis

2010-04-01

This paper explores the recent advances in circuit structures and design methodologies that have enabled ultra-low power sensing platforms and opened up a host of new applications. Central to this theme is the development of Near Threshold Computing (NTC) as a viable design space for low power sensing platforms. In this paradigm, the system's supply voltage is approximately equal to the threshold voltage of its transistors. Operating in this "near-threshold" region provides much of the energy savings previously demonstrated for subthreshold operation while offering more favorable performance and variability characteristics. This makes NTC applicable to a broad range of power-constrained computing segments including energy constrained sensing platforms. This paper explores the barriers to the adoption of NTC and describes current work aimed at overcoming these obstacles in the circuit design space.

The method for scanning reshaping the spectrum of chirped laser pulse based on the quadratic electro-optic effects

NASA Astrophysics Data System (ADS)

Ye, Rong; Yin, Ming; Wu, Xianyun; Tan, Hang

2017-10-01

T A new method for scanning reshaping the spectrum of chirped laser pulse based on quadratic electro-optic effects is proposed. The scanning reshaping scheme with a two-beam interference system is designed and the spectrum reshaping properties are analyzed theoretically. For the Gaussian chirped laser pulse with central wavelength λ0=800nm, nearly flat-topped spectral profiles with wider bandwidth is obtained with the proposed scanning reshaping method, which is beneficial to compensate for the gain narrowing effect in CPA and OPCPA. Further numerical simulations show that the reshaped spectrum is sensitive to the time-delay and deviation of the voltage applied to the crystal. In order to avoid narrowing or distorting the reshaped spectrum pointing to target, it is necessary to reduce the unfavorable deviations. With the rapid and wide applications of ultra-short laser pulse supported by some latter research results including photo-associative formation of ultra-cold molecules from ultra-cold atoms[1-3], laser-induced communications[4], capsule implosions on the National Ignition Facility(NIF)[5-6], the control of the temporal and spectral profiles of laser pulse is very important and urgently need to be addressed. Generally, the control of the pulse profiles depends on practical applications, ranging from femtosecond and picosecond to nanosecond. For instance, the basic shaping setup is a Fourier transform system for ultra-short laser pulse. The most important element is a spatially patterned mask which modulates the phase or amplitude, or sometimes the polarization after the pulse is decomposed into its constituent spectral components by usually a grating and a lens[7]. One of the generation techniques of ultra-short laser pulse is the chirped pulse amplifications(CPA), which brings a new era of development for high energy and high peak intensity ultra-short laser pulse, proposed by D. Strcik and G. Mourou from the chirping radar technology in microwave region since 1985[8]. The other generation technique of ultra-short pulse is the optical parametric chirped pulse amplification(OPCPA) invented by Dubietis et al. in 1992, which combined the respective superiorities of CPA and optical parametric amplification(OPA). However, there are disadvantages for the both technologies such as gain narrowing, gain saturation effects, and even spectrum shift. The first one among the three is the most significant which narrows the spectrum after amplification so that it limits the minimum durations of ultra-short laser pulse. This paper proposed a approach for scanning reshaping the spectrum of chirped laser pulse to compensate for the gain narrowing effect, according to the characteristics of the chirped laser pulse, i.e. the frequency varies with time linearly. The spectral characteristics of the scanning reshaping was analyzed quantitatively. Furthermore, the influence of the time-delay and deviation of the controlling voltage employed on the electro-optic crystal on the reshaped spectrum was also been discussed in detail.

Electromagnetic Interaction between the Component Coils of Multi-Plex Magnets

DOE PAGES

Nguyen, Quyen V. M.; Torrez, Lynette; Nguyen, Doan Ngoc

2017-12-04

Ultra-high field pulsed magnets are usually designed as a group of nested, concentric coils driven by separated power sources to reduce the required driving voltages and to distribute the mechanical load and to reduce the driving voltages. Since the magnet operates in a fast transient mode, there will be strong and complicated electromagnetic couplings between the component coils. The high eddy currents generated in the reinforcement shells of the component coils during the pulses also strongly affect these couplings. Therefore, understanding the electromagnetic interaction between the component coils will allow safer, more optimized design and operation of our magnets. Asmore » a result, this paper will focus on our finite element modeling and experimental results for the electromagnetic interactions between the component coils of the 100-T nondestructive magnet and 80-T duplex magnet at our facility.« less

Electromagnetic Interaction between the Component Coils of Multi-Plex Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Quyen V. M.; Torrez, Lynette; Nguyen, Doan Ngoc

Ultra-high field pulsed magnets are usually designed as a group of nested, concentric coils driven by separated power sources to reduce the required driving voltages and to distribute the mechanical load and to reduce the driving voltages. Since the magnet operates in a fast transient mode, there will be strong and complicated electromagnetic couplings between the component coils. The high eddy currents generated in the reinforcement shells of the component coils during the pulses also strongly affect these couplings. Therefore, understanding the electromagnetic interaction between the component coils will allow safer, more optimized design and operation of our magnets. Asmore » a result, this paper will focus on our finite element modeling and experimental results for the electromagnetic interactions between the component coils of the 100-T nondestructive magnet and 80-T duplex magnet at our facility.« less

Precision control of multiple quantum cascade lasers for calibration systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taubman, Matthew S., E-mail: Matthew.Taubman@pnnl.gov; Myers, Tanya L.; Pratt, Richard M.

We present a precision, 1-A, digitally interfaced current controller for quantum cascade lasers, with demonstrated temperature coefficients for continuous and 40-kHz full-depth square-wave modulated operation, of 1–2 ppm/ °C and 15 ppm/ °C, respectively. High precision digital to analog converters (DACs) together with an ultra-precision voltage reference produce highly stable, precision voltages, which are selected by a multiplexer (MUX) chip to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller, while ensuring protection of controller and all lasers during operation, standby,more » and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.« less

Precision Control of Multiple Quantum Cascade Lasers for Calibration Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taubman, Matthew S.; Myers, Tanya L.; Pratt, Richard M.

We present a precision, digitally interfaced current controller for quantum cascade lasers, with demonstrated DC and modulated temperature coefficients of 1- 2 ppm/ºC and 15 ppm/ºC respectively. High linearity digital to analog converters (DACs) together with an ultra-precision voltage reference, produce highly stable, precision voltages. These are in turn selected by a low charge-injection multiplexer (MUX) chip, which are then used to set output currents via a linear current regulator. The controller is operated in conjunction with a power multiplexing unit, allowing one of three lasers to be driven by the controller while ensuring protection of controller and all lasersmore » during operation, standby and switching. Simple ASCII commands sent over a USB connection to a microprocessor located in the current controller operate both the controller (via the DACs and MUX chip) and the power multiplexer.« less

A sub-cm micromachined electron microscope

NASA Technical Reports Server (NTRS)

Feinerman, A. D.; Crewe, D. A.; Perng, D. C.; Shoaf, S. E.; Crewe, A. V.

1993-01-01

A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.

High-stability cryogenic scanning tunneling microscope based on a closed-cycle cryostat.

PubMed

Hackley, Jason D; Kislitsyn, Dmitry A; Beaman, Daniel K; Ulrich, Stefan; Nazin, George V

2014-10-01

We report on the design and operation of a cryogenic ultra-high vacuum (UHV) scanning tunneling microscope (STM) coupled to a closed-cycle cryostat (CCC). The STM is thermally linked to the CCC through helium exchange gas confined inside a volume enclosed by highly flexible rubber bellows. The STM is thus mechanically decoupled from the CCC, which results in a significant reduction of the mechanical noise transferred from the CCC to the STM. Noise analysis of the tunneling current shows current fluctuations up to 4% of the total current, which translates into tip-sample distance variations of up to 1.5 picometers. This noise level is sufficiently low for atomic-resolution imaging of a wide variety of surfaces. To demonstrate this, atomic-resolution images of Au(111) and NaCl(100)/Au(111) surfaces, as well as of carbon nanotubes deposited on Au(111), were obtained. Thermal drift analysis showed that under optimized conditions, the lateral stability of the STM scanner can be as low as 0.18 Å/h. Scanning Tunneling Spectroscopy measurements based on the lock-in technique were also carried out, and showed no detectable presence of noise from the closed-cycle cryostat. Using this cooling approach, temperatures as low as 16 K at the STM scanner have been achieved, with the complete cool-down of the system typically taking up to 12 h. These results demonstrate that the constructed CCC-coupled STM is a highly stable instrument capable of highly detailed spectroscopic investigations of materials and surfaces at the atomic scale.

Morphology and electronic properties of silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Nie, Shu

2007-12-01

Several issues related to SiC surfaces are studied in the thesis using scanning tunneling microscopy/spectroscopy (STM/S) and atomic force microscopy (AFM). Specific surfaces examined include electropolished SiC, epitaxial graphene on SiC, and vicinal (i.e. slightly miscut from a low-index direction) SiC that have been subjected to high temperature hydrogen-etching. The electropolished surfaces are meant to mimic electrochemically etched SiC, which forms a porous network. The chemical treatment of the surface is similar between electropolishing and electrochemical etching, but the etching conditions are slightly different such that the former produces a flat surface (that is amenable to STM study) whereas the latter produces a complex 3-dimensional porous network. We have used these porous SiC layers as semi-permeable membranes in a biosensor, and we find that the material is quite biocompatible. The purpose of the STM/STS study is to investigate the surface properties of the SiC on the atomic scale in an effort to explain this biocompatibility. The observed tunneling spectra are found to be very asymmetric, with a usual amount of current at positive voltages but no observable current at negative voltages. We propose that this behavior is due to surface charge accumulating on an incompletely passivated surface. Measurements on SiC surfaces prepared by various amounts of hydrogen-etching are used to support this interpretation. Comparison with tunneling computations reveals a density of about 10 13 cm-2 fixed charges on both the electro-polished and the H-etched surfaces. The relatively insulating nature observed on the electro-polished SiC surface may provide an explanation for the biocompatibility of the surface. Graphene, a monolayer of carbon, is a new material for electronic devices. Epitaxial graphene on SiC is fabricated by the Si sublimation method in which a substrate is heated up to about 1350°C in ultra-high vacuum (UHV). The formation of the graphene is monitored using low-energy electron diffraction (LEED) and Auger electron spectroscopy, and the morphology of the graphitized surface is studied using AFM and STM. Use of H-etched SiC substrates enables a relatively flat surface morphology, although residual steps remain due to unintentional miscut of the wafers. Additionally, some surface roughness in the form of small pits is observed, possibly due to the fact that the surface treatments (H-etching and UHV annealing) having been performed in separate vacuum chambers with an intervening transfer through air. Field-effect transistors have been fabricated with our graphene layers; they show a relatively strong held effect at room temperature, with an electron mobility of 535 cm 2/Vs. This value is somewhat lower than that believed to be theoretically possible for this material, and one possible reason may be the nonideal morphology of the surface (i.e. because of the observed steps and pits). Tunneling spectra of the graphene reveal semi-metallic behavior, consistent with that theoretically expected for an isolated layer of graphene. However, additional discrete states are observed in the spectra, possibly arising from bonding at the graphene/SiC interface. The observation of these states provides important input towards an eventual determination of the complete interface structure, and additionally, such states may be relevant in determining the electron mobility of the graphene. Stepped vicinal SIC{0001} substrates are useful templates for epitaxial growth of various types of layers: thick layers of compound semiconductor (in which the steps help preserving the stacking arrangement in the overlayer), monolayers of graphene, or submonolayer semiconductor layers that form quantum wires along the step edges. Step array produced by H-etching of vicinal SiC (0001) and (0001¯) with various miscut angles have been studied by AFM. H-etching is found to produce full unit-cell-high steps on the (0001) Si-face surfaces, but half unit-cell-high steps on the (0001¯) C-face surfaces. These observations are consistent with an asymmetry in the surface energy (i.e. etch rate) of the two types of step terminations occurring on the different surfaces. For high miscut angles, facet formation is observed on the vicinal Si-face, but less so on the C-face. This difference is interpreted in terms of a lower surface energy of the C-face. In terms of applying the stepped surfaces as a template, a much better uniformity in the step-step separation is found for the C-face surfaces.

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

NASA Astrophysics Data System (ADS)

Chien, Diana; Li, Xiang; Wong, Kin; Zurbuchen, Mark A.; Robbennolt, Shauna; Yu, Guoqiang; Tolbert, Sarah; Kioussis, Nicholas; Khalili Amiri, Pedram; Wang, Kang L.; Chang, Jane P.

2016-03-01

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ˜40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.

Neutron Yield With a Pulsed Surface Flashover Deuterium Source

NASA Astrophysics Data System (ADS)

Guethlein, G.; Falabella, S.; Sampayan, S. E.; Meyer, G.; Tang, V.; Kerr, P.

2009-03-01

As a step towards developing an ultra compact D-D neutron source for various defense and homeland security applications, a compact, low average power ion source is needed. Towards that end, we are testing a high current, pulsed surface flashover ion source, with deuterated titanium as the spark contacts. Neutron yield and source lifetime data will be presented using a low voltage (<100 kV) deuterated target. With 20 ns spark drive pulses we have shown >106 neutrons/s with 1 kHz PRF

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Fast Mg2+ diffusion in Mo3(PO4)3O for Mg batteries.

PubMed

Rong, Ziqin; Xiao, Penghao; Liu, Miao; Huang, Wenxuan; Hannah, Daniel C; Scullin, William; Persson, Kristin A; Ceder, Gerbrand

2017-07-13

In this work, we identify a new potential Mg battery cathode structure Mo 3 (PO 4 ) 3 O, which is predicted to exhibit ultra-fast Mg 2+ diffusion and relatively high voltage based on first-principles density functional theory calculations. Nudged elastic band calculations reveal that the migration barrier of the percolation channel is only ∼80 meV, which is remarkably low, and comparable to the best Li-ion conductors. This low barrier is verified by ab initio molecular dynamics and kinetic Monte Carlo simulations. The voltage and specific energy are predicted to be ∼1.98 V and ∼173 W h kg -1 , respectively. If confirmed by experiments, this material would have the highest known Mg mobility among inorganic compounds.

Proposal and Development of a High Voltage Variable Frequency Alternating Current Power System for Hybrid Electric Aircraft

NASA Technical Reports Server (NTRS)

Sadey, David J.; Taylor, Linda M.; Beach, Raymond F.

2017-01-01

The development of ultra-efficient commercial vehicles and the transition to low-carbon emission propulsion are seen as strategic thrust paths within NASA Aeronautics. A critical enabler to these paths comes in the form of hybrid electric propulsion systems. For megawatt-class systems, the best power system topology for these hybrid electric propulsion systems is debatable. Current proposals within NASA and the Aero community suggest using a combination of alternating current (AC) and direct current (DC) for power generation, transmission, and distribution. This paper proposes an alternative to the current thought model through the use of a primarily high voltage AC power system, supported by the Convergent Aeronautics Solutions (CAS) Project. This system relies heavily on the use of doubly-fed induction machines (DFIMs), which provide high power densities, minimal power conversion, and variable speed operation. The paper presents background on the activity along with the system architecture, development status, and preliminary results.

Effect of Back Contact and Rapid Thermal Processing Conditions on Flexible CdTe Device Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahabaduge, Hasitha; Meysing, D. M.; Rance, Will L.

Flexible CdTe solar cells on ultra-thin glass substrates can enable new applications that require high specific power, unique form-factors, and low manufacturing costs. To be successful, these cells must be cost competitive, have high efficiency, and have high reliability. Here we present back contact processing conditions that enabled us to achieve over 16% efficiency on flexible Corning (R) Willow (R) Glass substrates. We used co-evaporated ZnTe:Cu and Au as our back contact and used rapid thermal processing (RTP) to activate the back contact. Both the ZnTe to Cu ratio and the RTP activation temperature provide independent control over the devicemore » performance. We have investigated the influence of various RTP conditions to Cu activation and distribution. Current density-voltage, capacitance-voltage measurements along with device simulations were used to examine the device performance in terms of ZnTe to Cu ratio and rapid thermal activation temperature.« less

Spontaneous desorption and phase transitions of self-assembled alkanethiol and alicyclic thiol monolayers chemisorbed on Au(111) in ultrahigh vacuum at room temperature.

PubMed

Ito, Eisuke; Kang, Hungu; Lee, Dongjin; Park, Joon B; Hara, Masahiko; Noh, Jaegeun

2013-03-15

Scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) were used to examine the surface structure and adsorption conditions of hexanethiol (HT) and cyclohexanethiol (CHT) self-assembled monolayers (SAMs) on Au(111) as a function of storage period in ultrahigh vacuum (UHV) conditions of 3×10(-7) Pa at room temperature (RT). STM imaging revealed that after storage for 7 days, HT SAMs underwent phase transitions from c(4×2) phase to low coverage 4×√3 phase. This transition is due to a structural rearrangement of hexanethiolates that results from the spontaneous desorption of chemisorbed HT molecules on Au(111) surface. XPS measurements showed approximately 28% reduction in sulfur coverage, which indicates desorption of hexanethiolates from the surfaces. Contrary to HT SAMs, the structural order of CHT SAMs with (5×2√3)R35° phase completely disappeared after storage for 3 or 7 days. XPS results show desorption of more than 80% of the cyclohexanethiolates, even after storage for 3 days. We found that spontaneous desorption of CHT molecules on Au(111) in UHV at RT occurred quickly, whereas spontaneous desorption of HT molecules was much slower. Thermal desorption spectroscopy (TDS) results suggest CHT SAMs in UHV at RT can desorb more efficiently than HT SAMs due to formation of thiol desorption fragments that result from chemical reactions between surface hydrogen atoms and thiolates on Au(111) surfaces. This study clearly demonstrated that organic thiols chemisorbed on gold surfaces are desorbed spontaneously in UHV at RT and van der Waals interactions play an important role in determining the structural stability of thiolate SAMs in UHV. Copyright © 2012 Elsevier Inc. All rights reserved.

Energy consumption analysis of graphene based all spin logic device with voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Zhang, Zhizhong; Zhang, Yue; Zheng, Zhenyi; Wang, Guanda; Su, Li; Zhang, Youguang; Zhao, Weisheng

2017-05-01

All spin logic device (ASLD) is a promising option to realize the ultra-low power computing systems. However, the low spin transport efficiency and the non-local switching of the detector have become two key challenges of the ASLD. In this paper, we analyze the energy consumption of a graphene based ASLD with the ferromagnetic layer switching assistance by voltage control magnetic anisotropy (VCMA) effect. This structure has significant potential towards ultra-low power consumption: the applied voltage can not only shorten switching time of the ferromagnetic layer, but also decreases the critical injection current; the graphene channel enhances greatly the spin transport efficiency. By applying the approximate circuit model, the impact of material configurations, interfaces and geometry can be synthetically studied. An accurate physic model was also developed, based on which, we carry out the micro-magnetic simulations to analyze the magnetization dynamics. Combining these electrical and magnetic investigations, the energy consumption of the proposed ASLD can be estimated. With the optimizing parameters, the energy consumption can be reduced to 2.5 pJ for a logic operation.

Ultra-low-energy analog straintronics using multiferroic composites

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2014-03-01

Multiferroic devices, i.e., a magnetostrictive nanomagnet strain-coupled with a piezoelectric layer, are promising as binary switches for ultra-low-energy digital computing in beyond Moore's law era [Roy, K. Appl. Phys. Lett. 103, 173110 (2013), Roy, K. et al. Appl. Phys. Lett. 99, 063108 (2011), Phys. Rev. B 83, 224412 (2011), Scientific Reports (Nature Publishing Group) 3, 3038 (2013), J. Appl. Phys. 112, 023914 (2012)]. We show here that such multiferroic devices, apart from performing digital computation, can be also utilized for analog computing purposes, e.g., voltage amplification, filter etc. The analog computing capability is conceived by considering that magnetization's mean orientation shifts gradually although nanomagnet's potential minima changes abruptly. Using tunneling magnetoresistance (TMR) measurement, a continuous output voltage while varying the input voltage can be produced. Stochastic Landau-Lifshitz-Gilbert (LLG) equation in the presence of room-temperature (300 K) thermal fluctuations is solved to demonstrate the analog computing capability of such multiferroic devices. This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

Breakdown in helium in high-voltage open discharge with subnanosecond current front rise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schweigert, I. V., E-mail: ischweig@itam.nsc.ru; Alexandrov, A. L.; Bokhan, P. A.

Investigations of high-voltage open discharge in helium have shown a possibility of generation of current pulses with subnanosecond front rise, due to ultra-fast breakdown development. The open discharge is ignited between two planar cathodes with mesh anode in the middle between them. For gas pressure 6 Torr and 20 kV applied voltage, the rate of current rise reaches 500 A/(cm{sup 2} ns) for current density 200 A/cm{sup 2} and more. The time of breakdown development was measured for different helium pressures and a kinetic model of breakdown in open discharge is presented, based on elementary reactions for electrons, ions andmore » fast atoms. The model also includes various cathode emission processes due to cathode bombardment by ions, fast atoms, electrons and photons of resonant radiation with Doppler shift of frequency. It is shown, that the dominating emission processes depend on the evolution of the discharge voltage during the breakdown. In the simulations, two cases of voltage behavior were considered: (i) the voltage is kept constant during the breakdown; (ii) the voltage is reduced with the growth of current. For the first case, the exponentially growing current is maintained due to photoemission by the resonant photons with Doppler-shifted frequency. For the second case, the dominating factor of current growth is the secondary electron emission. In both cases, the subnanosecond rise of discharge current was obtained. Also the effect of gas pressure on breakdown development was considered. It was found that for 20 Torr gas pressure the time of current rise decreases to 0.1 ns, which is in agreement with experimental data.« less

Piezo-based motion stages for heavy duty operation in clean environments

NASA Astrophysics Data System (ADS)

Karasikov, Nir; Peled, Gal; Yasinov, Roman; Gissin, Michael; Feinstein, Alan

2018-02-01

A range of heavy duty, ultra-precise motion stages had been developed for precise positioning in semiconductor manufacturing and metrology, for use in a clean room and high vacuum (HV and UHV) environments, to meet the precision requirements for 7, 5 nm nodes and beyond. These stages are powered by L1B2 direct drive ultrasonic motors, which allows combining long motion range, sub-nanometer positioning accuracy, high stiffness (in the direction of motion), low power consumption and active compensation of thermal and structural drift while holding position. The mechanical design, material selection for clean room and high vacuum preparation techniques are reviewed. Test results in a clean room are reported for a two-axis (X-Y) stage, having a load capacity of 30 kg, a motion range of 450 mm, a positioning accuracy of < 1 nm, a maximum motion speed of > 200 mm/s and a < 2 nm position stability (3 sigma). Long term drift compensation to sub-nm level, against thermal drift, has been validated for more than 10 hours. Heavy duty operation in a high vacuum is exemplified via a single axis stage operating at 5E-7 Torr, having a moving mass of 0.96 kg, oriented against gravity. The stage is operated periodically (up and down) over a travel length of 45 mm. The motion profile has a trapezoidal shape with an acceleration of 1m/s2 and a constant velocity of 100 mm/s. The operational parameters (average absolute position error during constant velocity, motor force, dead zone level) remain stable over more than 370000 passes (experiment duration).

Ultra Low Energy Binary Decision Diagram Circuits Using Few Electron Transistors

NASA Astrophysics Data System (ADS)

Saripalli, Vinay; Narayanan, Vijay; Datta, Suman

Novel medical applications involving embedded sensors, require ultra low energy dissipation with low-to-moderate performance (10kHz-100MHz) driving the conventional MOSFETs into sub-threshold operation regime. In this paper, we present an alternate ultra-low power computing architecture using Binary Decision Diagram based logic circuits implemented using Single Electron Transistors (SETs) operating in the Coulomb blockade regime with very low supply voltages. We evaluate the energy - performance tradeoff metrics of such BDD circuits using time domain Monte Carlo simulations and compare them with the energy-optimized CMOS logic circuits. Simulation results show that the proposed approach achieves better energy-delay characteristics than CMOS realizations.

Tools to Study Interfaces for Superconducting, Thermoelectric, and Magnetic Materials at the University of Houston

DTIC Science & Technology

2016-09-01

The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition, and morphology, will...used on our sputtering system to fabricate thin films with interfaces. - The electronic structures of these materials will be investigated using the...magnetization/transport measurements. The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition

The active modulation of drug release by an ionic field effect transistor for an ultra-low power implantable nanofluidic system.

PubMed

Bruno, Giacomo; Canavese, Giancarlo; Liu, Xuewu; Filgueira, Carly S; Sacco, Adriano; Demarchi, Danilo; Ferrari, Mauro; Grattoni, Alessandro

2016-11-10

We report an electro-nanofluidic membrane for tunable, ultra-low power drug delivery employing an ionic field effect transistor. Therapeutic release from a drug reservoir was successfully modulated, with high energy efficiency, by actively adjusting the surface charge of slit-nanochannels 50, 110, and 160 nm in size, by the polarization of a buried gate electrode and the consequent variation of the electrical double layer in the nanochannel. We demonstrated control over the transport of ionic species, including two relevant hypertension drugs, atenolol and perindopril, that could benefit from such modulation. By leveraging concentration-driven diffusion, we achieve a 2 to 3 order of magnitude reduction in power consumption as compared to other electrokinetic phenomena. The application of a small gate potential (±5 V) in close proximity (150 nm) of 50 nm nanochannels generated a sufficiently strong electric field, which doubled or blocked the ionic flux depending on the polarity of the voltage applied. These compelling findings can lead to next generation, more reliable, smaller, and longer lasting drug delivery implants with ultra-low power consumption.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; CNRS, SPINTEC, F-38000 Grenoble

2015-05-07

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remainingmore » in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.« less

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

PubMed Central

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; He, Xi; Bollinger, Anthony T.; Pavuna, Davor; Pindak, Ron; Božović, Ivan

2016-01-01

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms. PMID:27578237

Sub-2 nm Thick Fluoroalkylsilane Self-Assembled Monolayer-Coated High Voltage Spinel Crystals as Promising Cathode Materials for Lithium Ion Batteries

PubMed Central

Zettsu, Nobuyuki; Kida, Satoru; Uchida, Shuhei; Teshima, Katsuya

2016-01-01

We demonstrate herein that an ultra-thin fluoroalkylsilane self-assembled monolayer coating can be used as a modifying agent at LiNi0.5Mn1.5O4−δcathode/electrolyte interfaces in 5V-class lithium-ion batteries. Bare LiNi0.5Mn1.5O4−δ cathode showed substantial capacity fading, with capacity dropping to 79% of the original capacity after 100 cycles at a rate of 1C, which was entirely due to dissolution of Mn3+ from the spinel lattice via oxidative decomposition of the organic electrolyte. Capacity retention was improved to 97% on coating ultra-thin FAS17-SAM onto the LiNi0.5Mn1.5O4 cathode surface. Such surface protection with highly ordered fluoroalkyl chains insulated the cathode from direct contact with the organic electrolyte and led to increased tolerance to HF. PMID:27553901

Ultra-Sensitive Strain Sensor Based on Flexible Poly(vinylidene fluoride) Piezoelectric Film

NASA Astrophysics Data System (ADS)

Lu, Kai; Huang, Wen; Guo, Junxiong; Gong, Tianxun; Wei, Xiongbang; Lu, Bing-Wei; Liu, Si-Yi; Yu, Bin

2018-03-01

A flexible 4 × 4 sensor array with 16 micro-scale capacitive units has been demonstrated based on flexible piezoelectric poly(vinylidene fluoride) (PVDF) film. The piezoelectricity and surface morphology of the PVDF were examined by optical imaging and piezoresponse force microscopy (PFM). The PFM shows phase contrast, indicating clear interface between the PVDF and electrode. The electro-mechanical properties show that the sensor exhibits excellent output response and an ultra-high signal-to-noise ratio. The output voltage and the applied pressure possess linear relationship with a slope of 12 mV/kPa. The hold-and-release output characteristics recover in less than 2.5 μs, demonstrating outstanding electro-mechanical response. Additionally, signal interference between the adjacent arrays has been investigated via theoretical simulation. The results show the interference reduces with decreasing pressure at a rate of 0.028 mV/kPa, highly scalable with electrode size and becoming insignificant for pressure level under 178 kPa.

Ultra-Sensitive Strain Sensor Based on Flexible Poly(vinylidene fluoride) Piezoelectric Film.

PubMed

Lu, Kai; Huang, Wen; Guo, Junxiong; Gong, Tianxun; Wei, Xiongbang; Lu, Bing-Wei; Liu, Si-Yi; Yu, Bin

2018-03-14

A flexible 4 × 4 sensor array with 16 micro-scale capacitive units has been demonstrated based on flexible piezoelectric poly(vinylidene fluoride) (PVDF) film. The piezoelectricity and surface morphology of the PVDF were examined by optical imaging and piezoresponse force microscopy (PFM). The PFM shows phase contrast, indicating clear interface between the PVDF and electrode. The electro-mechanical properties show that the sensor exhibits excellent output response and an ultra-high signal-to-noise ratio. The output voltage and the applied pressure possess linear relationship with a slope of 12 mV/kPa. The hold-and-release output characteristics recover in less than 2.5 μs, demonstrating outstanding electro-mechanical response. Additionally, signal interference between the adjacent arrays has been investigated via theoretical simulation. The results show the interference reduces with decreasing pressure at a rate of 0.028 mV/kPa, highly scalable with electrode size and becoming insignificant for pressure level under 178 kPa.

Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Qing; Xia, Yangyang; Zheng, Yonghui

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 ordersmore » of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.« less

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

NASA Astrophysics Data System (ADS)

Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

2014-10-01

We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

Bridging the Gap: From Model Surfaces to Nanoparticle Analogs for Selective Oxidation and Steam Reforming of Methanol and Selective Hydrogenation Catalysis

NASA Astrophysics Data System (ADS)

Boucher, Matthew B.

Most industrial catalysts are very complex, comprising of non-uniform materials with varying structures, impurities, and interaction between the active metal and supporting substrate. A large portion of the ongoing research in heterogeneous catalysis focuses on understanding structure-function relationships in catalytic materials. In parallel, there is a large area of surface science research focused on studying model catalytic systems for which structural parameters can be tuned and measured with high precision. It is commonly argued, however, that these systems are oversimplified, and that observations made in model systems do not translate to robust catalysts operating in practical environments; this discontinuity is often referred to as a "gap." The focus of this thesis is to explore the mutual benefits of surface science and catalysis, or "bridge the gap," by studying two catalytic systems in both ultra-high vacuum (UHV) and near ambient-environments. The first reaction is the catalytic steam reforming of methanol (SRM) to hydrogen and carbon dioxide. The SRM reaction is a promising route for on-demand hydrogen production. For this catalytic system, the central hypothesis in this thesis is that a balance between redox capability and weak binding of reaction intermediates is necessary for high SRM activity and selectivity to carbon dioxide. As such, a new catalyst for the SRM reaction is developed which incorporates very small amounts of gold (<1 atomic %) supported on zinc oxide nanoparticles with controlled crystal structures. The performance of these catalysts was studied in a fixed-bed micro-reactor system at ambient pressures, and their structure was characterized by high-resolution microscopic and spectroscopic techniques. Pre-existing oxygen defects in zinc oxide {0001} surfaces, and those created by a perturbation of the defect equilibrium by addition of gold, provide an anchoring site for highly dispersed gold species. By utilizing shape control of zinc oxide supports, it is found that highly dispersed gold, capable of low-temperature redox behavior is most prominent on zinc oxide {0001} surfaces and leads to high SRM activity and selectivity to carbon dioxide. Like other Group IB metal catalysts the SRM over gold-zinc oxide proceeds through the formation and weak binding of formaldehyde, and subsequent coupling with methoxy to produce methyl formate. Mechanistic clarification of this point was achieved by studying the interaction methanol-water mixtures with model catalyst surfaces. Model catalysts were studied in a UHV chamber where the base pressure was maintained at 10-10 mbar. High resolutions surface science techniques show that hydrogen-bonded networks of water are capable of deprotonating methanol to methoxy on low index surfaces in the absence of atomic oxygen. These UHV studies show that adsorbates, other than oxygen, are capable of activating methanol on Group IB metal surfaces. The second reaction involves the selective hydrogenation of alkynes to alkenes. Selective hydrogenations of carbon-carbon multiple bonds are important for a wide range of industrial processes. The governing hypothesis for this reaction system is that cooperation between a minority metal with a low barrier for hydrogen dissociation, and a less-reactive host metal capable of hydrogen uptake via spillover will lead to high alkene selectivity. A strategy for the preparation of such a catalyst is developed using model catalyst studied in a UHV chamber. The model catalyst features isolated palladium atoms in a copper(111) surface, termed single atom alloy (SAA). Individual, isolated palladium atoms act as sites for hydrogen uptake, dissociation, and spillover onto an otherwise inert copper(111) host. Weak binding offered by copper provides a surface where selective hydrogenation reactions can take place. Palladium-copper SAA model catalysts are highly selective to the partial hydrogenation of acetylene, whereas surfaces containing larger palladium ensembles facilitate complete hydrogenation and decomposition. Nanoparticle analogs of palladium-copper SAAs were prepared to investigate the feasibility of this strategy for practical application. Very small amounts of palladium (<0.2 atomic %) on the surface of copper nanoparticles are highly active and selective catalysts for the partial hydrogenation of phenylacetylene to styrene. The performance of these catalysts was studied in a liquid-phase, stirred-tank batch reactor under a hydrogen head pressure of approximately 7 bar. Palladium alloyed into the surface of otherwise inactive copper nanoparticles shows a marked improvement in selectivity when compared to monometallic palladium catalysts with the same metal loading. This effect is attributed hydrogen spillover onto the copper surface. In summary, the development of new, highly active and selective catalysts for the methanol steam reforming reaction and for the partial hydrogenation of alkynes to alkenes was accomplished by the use of state-of-the-art techniques in both surface science and heterogeneous catalysis. The implications of this work can be extended to a wide variety of catalytic systems.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Revisiting the open-framework zinc hexacyanoferrate: The role of ternary electrolyte and sodium-ion intercalation mechanism

NASA Astrophysics Data System (ADS)

Niu, Lei; Chen, Liang; Zhang, Jun; Jiang, Ping; Liu, Zhaoping

2018-03-01

Non-flammable rechargeable aqueous sodium-ion batteries (RASB) made from natural abundant resources offer promising opportunities in large-scale energy storage, yet the low energy density as well as low voltage output and the limited cycle life hinder their practical applications. Here, we develop a high-voltage RASB based on rhombohedral zinc hexacyanoferrate as cathode materials, carbon-coated NaTi2(PO4)3 as anode materials and ternary NaClO4-H2O-polyethylene glycol (Na-H2O-PEG) as electrolyte to overcome these drawbacks. Such an RASB can deliver a high voltage output of 1.6 V with a specific energy density of 59 Wh kg-1 based on the total mass of active electrode materials. In addition, it possesses an excellent rate capability as an ultra-capacitor (2.7 kW kg-1). The capacity retention more than 91% is obtained after 100 cycles. Finally, a reversible phase transformation between rhombohedral Zn3[Fe(CN)6]2 and rhombohedral Na2Zn3[Fe(CN)6]2 that are accompanied by the insertion/extraction of sodium ion in zinc hexacyanoferrate is unveiled.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

NASA Astrophysics Data System (ADS)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

Electron spectroscopy analysis

NASA Technical Reports Server (NTRS)

Gregory, John C.

1992-01-01

The Surface Science Laboratories at the University of Alabama in Huntsville (UAH) are equipped with x-ray photoelectron spectroscopy (XPS or ESCA) and Auger electron spectroscopy (AES) facilities. These techniques provide information from the uppermost atomic layers of a sample, and are thus truly surface sensitive. XPS provides both elemental and chemical state information without restriction on the type of material that can be analyzed. The sample is placed into an ultra high vacuum (UHV) chamber and irradiated with x-rays which cause the ejection of photoelectrons from the sample surface. Since x-rays do not normally cause charging problems or beam damage, XPS is applicable to a wide range of samples including metals, polymers, catalysts, and fibers. AES uses a beam of high energy electrons as a surface probe. Following electronic rearrangements within excited atoms by this probe, Auger electrons characteristic of each element present are emitted from the sample. The main advantage of electron induced AES is that the electron beam can be focused down to a small diameter and localized analysis can be carried out. On the rastering of this beam synchronously with a video display using established scanning electron microscopy techniques, physical images and chemical distribution maps of the surface can be produced. Thus very small features, such as electronic circuit elements or corrosion pits in metals, can be investigated. Facilities are available on both XPS and AES instruments for depth-profiling of materials, using a beam of argon ions to sputter away consecutive layers of material to reveal sub-surface (and even semi-bulk) analyses.

In situ sputter cleaning of thin film metal substrates for UHV-TEM corrosion studies.

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.

1973-01-01

A prerequisite for conducting valid corrosion experiments by in situ electron microscopy techniques is not only the achievement of UHV background pressure conditions at the site of the specimen but also the ability to clean the surface of the thin metal substrate specimen before initiation of the corrosive interaction. A miniaturized simple ion gun has been constructed for this purpose. The gun is small enough to be incorporated into an UHV electron microscope specimen chamber with hot stage in such a way as to permit bombardment of the substrate specimen while observing it by transmission electron microscopy TEM. It is shown that the ion beam generated is confined well enough to cause a sputtering removal of substrate material at a rate of approximately 5-10 A/min and to prevent the sputter deposition of contaminating material from the specimen holder.

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

NASA Technical Reports Server (NTRS)

DeGregorio, Kelly; Wilson, Dale G.

2009-01-01

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

Ultra-low current biosensor output detection using portable electronic reader

NASA Astrophysics Data System (ADS)

Yahaya, N. A. N.; Rajapaksha, R. D. A. A.; Uda, M. N. Afnan; Hashim, U.

2017-09-01

Generally, the electrical biosensor usually shows extremely low current signal output around pico ampere to microampere range. In this research, electronic reader with amplifier has been demonstrated to detect ultra low current via the biosensor. The operational amplifier Burr-Brown OPA 128 and Arduino Uno board were used to construct the portable electronic reader. There are two cascaded inverting amplifier were used to detect ultra low current through the biosensor from pico amperes (pA) to nano amperes ranges (nA). A small known input current was form by applying variable voltage between 0.1V to 5.0V across a 5GΩ high resistor to check the amplifier circuit. The amplifier operation was measured with the high impedance current source and has been compared with the theoretical measurement. The Arduino Uno was used to convert the analog signal to digital signal and process the data to display on reader screen. In this project, Proteus software was used to design and test the circuit. Then it was implemented together with Arduino Uno board. Arduino board was programmed using C programming language to make whole circuit communicate each order. The current was measured then it shows a small difference values compared to theoretical values, which is approximately 14pA.

Characterization of conductive nanobiomaterials derived from viral assemblies by low-voltage STEM imaging and Raman scattering

NASA Astrophysics Data System (ADS)

Plascencia-Villa, Germán; Carreño-Fuentes, Liliana; Bahena, Daniel; José-Yacamán, Miguel; Palomares, Laura A.; Ramírez, Octavio T.

2014-09-01

New technologies require the development of novel nanomaterials that need to be fully characterized to achieve their potential. High-resolution low-voltage scanning transmission electron microscopy (STEM) has proven to be a very powerful technique in nanotechnology, but its use for the characterization of nanobiomaterials has been limited. Rotavirus VP6 self-assembles into nanotubular assemblies that possess an intrinsic affinity for Au ions. This property was exploited to produce hybrid nanobiomaterials by the in situ functionalization of recombinant VP6 nanotubes with gold nanoparticles. In this work, Raman spectroscopy and advanced analytical electron microscopy imaging with spherical aberration-corrected (Cs) STEM and nanodiffraction at low-voltage doses were employed to characterize nanobiomaterials. STEM imaging revealed the precise structure and arrangement of the protein templates, as well as the nanostructure and atomic arrangement of gold nanoparticles with high spatial sub-Angstrom resolution and avoided radiation damage. The imaging was coupled with backscattered electron imaging, ultra-high resolution scanning electron microscopy and x-ray spectroscopy. The hybrid nanobiomaterials that were obtained showed unique properties as bioelectronic conductive devices and showed enhanced Raman scattering by their precise arrangement into superlattices, displaying the utility of viral assemblies as functional integrative self-assembled nanomaterials for novel applications.

Ultra low-power transceiver with novel FSK modulation technique and efficient FSK-to-ASK demodulation.

PubMed

Zgaren, Mohamed; Moradi, Arash; Sawan, Mohamad

2015-01-01

Energy-efficient and high-data rate are desired in biomedical devices transceivers. A high-performance transmitter (Tx) and an ultra-low-power receiver (Rx) dedicated to medical implants communications operating at Industrial, Scientific and Medical (ISM) frequency band are presented. Tx benefits from a new efficient Frequency-Shift Keying (FSK) modulation technique which provides up to 20 Mb/s of data-rate and consumes only 0.084 nJ/b validated through fabrication. The receiver consists of an FSK-to-ASK conversion based receiver with OOK fully passive wake-up device (WuRx). This WuRx is battery less with energy harvesting technique which plays an important role in making the RF transceiver energy-efficient. The Rx is achieved with a reduced hardware architecture which does not use an accurate local oscillator, high-Q external inductor and I/Q signal path. The Rx shows -78 dBm sensitivity for 8 Mbps data rate while consuming 639 μW. The proposed circuits are implemented in IBM 0.13 μm CMOS technology with 1.2 V supply voltage.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Development of a compact generator for gigawatt, nanosecond high-voltage pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Lin, E-mail: zhoulin-2003@163.com; Jiang, Zhanxing; Liang, Chuan

2016-03-15

A compact generator producing 2.2-ns 1.5 GW high-voltage pulses was developed. The generator employed a 27.6 Ω, 0.9 ns pulse-forming-line (PFL), which was charged by an iron core transformer with a turn ratio of 2:33.5 and a coefficient of 0.94. A 1.2 μF, 20 kV capacitor and a hydrogen thyratron were used in the primary circuit. When the thyratron closed at 14.5 kV, 3.4% of the energy stored in the capacitor was delivered to the PFL in 850 ns, producing a peak voltage of up to ∼500 kV. In addition, the principle of triple resonance transformation was employed by addingmore » a 50 pF tuning capacitor and a 1.15 mH inductor between the transformer and the PFL, which led to a significant reduction of the duration and peak value of the transformer voltage without reducing that in the PFL. Meanwhile, an adjustable self-break oil switch was applied. By using transmission lines with impedance overmatched to that of the PFL, the generator delivered a 512 kV pulse across an electron beam diode, generating radiation with a dose of 20 mR/pulse at 20 cm ahead of the diode. The generator provides an excellent ultra-short radiation pulse source for the studies on radiation physics.« less

Development of a compact generator for gigawatt, nanosecond high-voltage pulses.

PubMed

Zhou, Lin; Jiang, Zhanxing; Liang, Chuan; Li, Mingjia; Wang, Wenchuan; Li, Zhenghong

2016-03-01

A compact generator producing 2.2-ns 1.5 GW high-voltage pulses was developed. The generator employed a 27.6 Ω, 0.9 ns pulse-forming-line (PFL), which was charged by an iron core transformer with a turn ratio of 2:33.5 and a coefficient of 0.94. A 1.2 μF, 20 kV capacitor and a hydrogen thyratron were used in the primary circuit. When the thyratron closed at 14.5 kV, 3.4% of the energy stored in the capacitor was delivered to the PFL in 850 ns, producing a peak voltage of up to ∼500 kV. In addition, the principle of triple resonance transformation was employed by adding a 50 pF tuning capacitor and a 1.15 mH inductor between the transformer and the PFL, which led to a significant reduction of the duration and peak value of the transformer voltage without reducing that in the PFL. Meanwhile, an adjustable self-break oil switch was applied. By using transmission lines with impedance overmatched to that of the PFL, the generator delivered a 512 kV pulse across an electron beam diode, generating radiation with a dose of 20 mR/pulse at 20 cm ahead of the diode. The generator provides an excellent ultra-short radiation pulse source for the studies on radiation physics.

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

PubMed

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

Ricor's Nanostar water vapor compact cryopump: applications and model overview

NASA Astrophysics Data System (ADS)

Harris, Rodney S.; Nachman, Ilan; Tauber, Tomer; Kootzenko, Michael; Barak, Boris; Aminov, Eli; Gover, Dan

2017-05-01

Ricor Systems has developed a compact, single stage cryopump that fills the gap where GM and other type cryopumps can't fit in. Stirling cycle technology is highly efficient and is the primary cryogenic technology for use in IR, SWIR, HOT FPA, and other IR detector technology in military, security, and aerospace applications. Current GM based dual stage cryopumps have been the legacy type water vapor pumping system for more than 50 years. However, the typically large cryopanel head, compressor footprint, and power requirements make them not cost and use effective for small, tabletop evaporation / sputtering systems, portable analysis systems, and other systems requiring small volume vacuum creation from medium, high, and UHV levels. This single stage cryopump works well in-line with diffusion and molecular turbopumps. Studies have shown effective cooperation with non-evaporable getter technology as well for UHV levels. Further testing in this area are ongoing. Temperatures created by Stirling cycle cryogenic coolers develop a useful temperature range of 40 to 150K. Temperatures of approximately 100 K are sufficient to condense water and all hydrocarbons oil vapors.

Design techniques for low-voltage analog integrated circuits

NASA Astrophysics Data System (ADS)

Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

2017-08-01

In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

NASA Technical Reports Server (NTRS)

Leopold, Daniel J.

2002-01-01

The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

In-Situ Apatite Laser Ablation U-Th-Sm/He Dating, Methods and Challenges

NASA Astrophysics Data System (ADS)

Pickering, J. E.; Matthews, W.; Guest, B.; Hamilton, B.; Sykes, C.

2015-12-01

In-situ, laser ablation U-Th-Sm/He dating is an emerging technique in thermochronology that has been proven as a means to date zircon and monzonite1-5. In-situ U-Th-Sm/He thermochronology eliminates many of the problems and inconveniences associated with traditional, whole grain methods, including; reducing bias in grain selection based on size, shape and clarity; allowing for the use of broken grains and grains with inclusions; avoiding bad neighbour effects; and eliminating safety hazards associated with dissolution. In-situ apatite laser ablation is challenging due to low concentrations of U and Th and thus a low abundance of radiogenic He. For apatite laser ablation to be effective the ultra-high-vacuum (UHV) line must have very low and consistent background levels of He. To reduce He background, samples are mounted in a UHV stable medium. Our mounting process uses a MicroHePP (Microscope Mounted Heated Platen Press) to press samples into FEP (fluorinated ethylene propylene) bonded to an aluminum backing plate. Samples are ablated using a Resonetics 193 nm excimer laser and liberated He is measured using a quadrupole mass spectrometer on the ASI Alphachron noble gas line; collectively this system is known as the Resochron. The ablated sites are imaged using a Zygo Zescope optical profilometer and ablated pit volume measured using PitVol, a custom MatLab algorithm developed to enable precise and unbiased measurement of the ablated pit geometry. We use the well-characterized Durango apatite to demonstrate the accuracy and precision of the method. He liberated from forty-two pits, having volumes between 1700 and 9000 um3, were measured using the Resochron. The ablated sites were imaged using a Zygo Zescope optical profilometer and ablated pit volume measured using PitVol. U, Th and Sm concentrations were measured by laser ablation and the U-Th-Sm/He age calculated by standard age equation. An age of 33.8±0.31 Ma was determined and compares well with conventional U-Th/He methods, whole grain degassing and dissolution, that produced an age of 32.73±0.47 Ma for chips of the same Durango crystal. Further dating of other well characterized apatite crystals will be used to test the robustness of the method.

The profile of the bending mode band in solid CO2

NASA Astrophysics Data System (ADS)

Baratta, G. A.; Palumbo, M. E.

2017-12-01

Context. Solid carbon dioxide (CO2) is one of the most abundant species detected in icy grain mantles in dense molecular clouds. Its identification is based on the comparison between astronomical and laboratory spectra. In the past 30 yr the profile of solid CO2 infrared absorption bands has been extensively studied experimentally, however, the debate on the structure (amorphous versus crystalline) of CO2 samples obtained in laboratory by the thin-film technique is still open. Aims: The aim of this work is to investigate if the presence of the double peak feature in the profile of the CO2 bending mode band is related to the crystalline or amorphous structure of the sample. Methods: We performed new laboratory experiments depositing CO2 under ultra high vacuum (UHV) conditions at 17 K. We investigated, using infrared transmission spectroscopy, the influence of various experimental parameters on the profile of the CO2 bands, namely deposition rate, sample thickness, annealing, and presence of H2O, CH3OH or CO co-deposited with CO2. Results: We found that, within experimental uncertainties, under UHV conditions the profile of the CO2 bands in pure solid samples does not depend on the deposition rate or the sample thickness in the ranges investigated. In all cases the bending mode band profile shows a double peak (at 660 and 655 cm-1). The spectra also show the Fermi resonance features that cannot be active in crystalline samples. On the other hand, when a small fraction of H2O or CH3OH is co-deposited with CO2 the double peak is not observed while it is observed when a CO2:CO mixture is considered. Furthermore, we measured the density of solid CO2 and the refractive index (at 543.5 nm) at 17 K and at 70 K: ρ(17 K)= 1.17 g cm-3, ρ(70K)= 1.49 g cm-3, n(17K)= 1.285, and n(70K)= 1.372. Conclusions: Our experimental results indicate that the presence of the double peak in the profile of the bending mode band is not an indication of a crystalline structure of the sample and they do not exclude the presence of amorphous solid CO2 in space.

Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cultrera, L.; Gulliford, C.; Bartnik, A.

2016-03-28

The intrinsic emittance of electron beams generated from a multi-alkali photocathode operated in a high voltage DC gun is reported. The photocathode showed sensitivity extending to the infrared part of the spectrum up to 830 nm. The measured intrinsic emittances of electron beams generated with light having wavelength longer than 800 nm are approaching the limit imposed by the thermal energy of electrons at room temperature with quantum efficiencies comparable to metallic photocathodes used in operation of modern photoinjectors.

Characterization of the surfaces of platinum/tin oxide based catalysts by Fourier Transform Infrared Spectroscopy (FTIR)

NASA Technical Reports Server (NTRS)

Keiser, Joseph T.; Upchurch, Billy T.

1990-01-01

A Pt/SnO2 catalyst has been developed at NASA Langley that is effective for the oxidation of CO at room temperature (1). A mechanism has been proposed to explain the effectiveness of this catalyst (2), but most of the species involved in this mechanism have not been observed under actual catalytic conditions. A number of these species are potentially detectable by Fourier Transform Infrared Spectroscopy (FTIR), e.g., HOSnO sub x, HO sub y PtO sub z, Pt-CO, and SnHCO3. Therefore a preliminary investigation was conducted to determine what might be learned about this particular catalyst by transmission FTIR. The main advantage of FTIR for this work is that the catalyst can be examined under conditions similar to the actual catalytic conditions. This can be of critical importance since some surface species may exist only when the reaction gases are present. Another advantage of the infrared approach is that since vibrations are probed, subtle chemical details may be obtained. The main disadvantage of this approach is that FTIR is not nearly as sensitive as the Ultra High Vacuum (UHV) surface analytical techniques such as Auger, Electron Spectroscopy for Chemical Analysis (ESCA), Electron Energy Loss Spectroscopy (EELS), etc. Another problem is that the assignment of the observed infrared bands may be difficult.

A Library of the Nanoscale Self-Assembly of Amino Acids on Metal Surfaces

NASA Astrophysics Data System (ADS)

Iski, Erin; Yitamben, Esmeralda; Guisinger, Nathan

2012-02-01

The investigation of the hierarchical self-assembly of amino acids on surfaces represents a unique test-bed for the origin of enantio-favoritism in biology and the transmission of chirality from single molecules to complete surface layers. These chiral systems, in particular the assembly of isoleucine and alanine on Cu(111), represent a direct link to the understanding of certain biological processes, specifically the preference for some amino acids to form alpha helices vs. beta-pleated sheets in the secondary structure of proteins. Low temperature, ultra-high vacuum, scanning tunneling microscopy (LT UHV-STM) is used to study the hierarchical self-assembly of different amino acids on a Cu(111) single crystal in an effort to build a library of their two-dimensional structure with molecular-scale resolution for enhanced protein and peptide studies. Both enantiopure and racemic structures are studied in order to elucidate how chirality can affect the self-assembly of the amino acids. In some cases, density functional theory (DFT) models can be used to confirm the experimental structure. The advent of such a library with fully resolved, two-dimensional structures at different molecular coverages would address some of the complex questions surrounding the preferential formation of alpha helices vs. beta-pleated sheets in proteins and lead to a better understanding of the key role played by these amino acids in protein sequencing.

Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

NASA Astrophysics Data System (ADS)

Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

2017-04-01

In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott

2003-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Ultra-compliant liquid metal electrodes with in-plane self-healing capability for dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Meng; Mei, Shengfu; Han, Yanting; Liu, Jing

2013-08-01

The method of directly printing liquid metal films as highly conductive and super compliant electrodes for dielectric elastomer actuator (DEA) was proposed and experimentally demonstrated with working mechanisms interpreted. Such soft electrodes enable DE film to approach its maximum strain and stress at relatively low voltages. Further, its unique capability of achieving two-dimensional in-plane self-healing by merely actuating the DEA was disclosed, which would allow actuators more tolerant to fault and resilient to abusive environments. This high performance actuator has important value in a wide spectrum of situations ranging from artificial muscle, flexible electronics to smart clothing etc.

Upscaling high-quality CVD graphene devices to 100 micron-scale and beyond

NASA Astrophysics Data System (ADS)

Lyon, Timothy J.; Sichau, Jonas; Dorn, August; Zurutuza, Amaia; Pesquera, Amaia; Centeno, Alba; Blick, Robert H.

2017-03-01

We describe a method for transferring ultra large-scale chemical vapor deposition-grown graphene sheets. These samples can be fabricated as large as several cm2 and are characterized by magneto-transport measurements on SiO2 substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.

Optical methods for wireless implantable sensing platforms

NASA Astrophysics Data System (ADS)

Mujeeb-U-Rahman, Muhammad; Chang, Chieh-Feng; Scherer, Axel

2013-09-01

Ultra small scale implants have gained lots of importance for both acute and chronic applications. Optical techniques hold the key to miniaturizing these devices to long sought sub-mm scale. This will lead towards long term use of these devices for medically relevant applications. It can also allow using multiple of these devices at the same time and forming a true body area network of sensors. In this paper, we present optical power transfer to such devices and the techniques to harness this power for different applications, for example high voltage or high current applications. We also present methods for wireless data transfer from such implants.

Qubit Coupled Mechanical Resonator in an Electromechanical System

NASA Astrophysics Data System (ADS)

Hao, Yu

This thesis describes the development of a hybrid quantum electromechanical system. In this system the mechanical resonator is capacitively coupled to a superconducting transmon which is embedded in a superconducting coplanar waveguide (CPW) cavity. The difficulty of achieving high quality of superconducting qubit in a high-quality voltage-biased cavity is overcome by integrating a superconducting reflective T-filter to the cavity. Further spectroscopic and pulsed measurements of the hybrid system demonstrate interactions between the ultra-high frequency mechanical resonator and transmon qubit. The noise of mechanical resonator close to ground state is measured by looking at the spectroscopy of the transmon. At last, fabrication and tests of membrane resonators are discussed.

Bringing Superconductor Digital Technology to the Market Place

NASA Astrophysics Data System (ADS)

Nisenoff, Martin

The unique properties of superconductivity can be exploited to provide the ultimate in electronic technology for systems such as ultra-precise analogue-to-digital and digital-to-analogue converters, precise DC and AC voltage standards, ultra high speed logic circuits and systems (both digital and hybrid analogue-digital systems), and very high throughput network routers and supercomputers which would have superior electrical performance at lower overall electrical power consumption compared to systems with comparable performance which are fabricated using conventional room temperature technologies. This potential for high performance electronics with reduced power consumption would have a positive impact on slowing the increase in the demand for electrical utility power by the information technology community on the overall electrical power grid. However, before this technology can be successfully brought to the commercial market place, there must be an aggressive investment of resources and funding to develop the required infrastructure needed to yield these high performance superconductor systems, which will be reliable and available at low cost. The author proposes that it will require a concerted effort by the superconductor and cryogenic communities to bring this technology to the commercial market place or make it available for widespread use in scientific instrumentation.

Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua

We studied structural changes in a 5 unit cell thick La 1.96Sr 0.04CuO 4 film, epitaxially grown on a LaSrAlO 4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were:more » (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

Oxygen Displacement in Cuprates under IonicLiquid Field-Effect Gating

DOE PAGES

Dubuis, Guy; Yacoby, Yizhak; Zhou, Hua; ...

2016-08-15

We studied structural changes in a 5 unit cell thick La 1.96Sr 0.04CuO 4 film, epitaxially grown on a LaSrAlO 4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were:more » (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and planar oxygen atoms were displaced towards the sample surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of planar oxygen atoms.« less

FinFET and UTBB for RF SOI communication systems

NASA Astrophysics Data System (ADS)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

Scanning tunneling microscopy study of low temperature silicon epitaxy on hydrogen/silicon(001) and phosphine adsorption on silicon(111)-7x7

NASA Astrophysics Data System (ADS)

Ji, Jeong-Young

A three-chamber ultra-high-vacuum (UHV) system with preparation, scanning tunneling microscopy (STM), and chemical vapor deposition (CVD) chambers was designed and built. Here, one can perform surface preparation, STM e-beam lithography, precursor gas dosing, ion sputtering, silicon epitaxy, and various measurements such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Processes performed in the ultra-clean preparation and gas-filled CVD chambers can be monitored by transferring the samples back to the STM chamber to take topographical images. Si deposition on H-terminated Si(001)-2x1 surfaces at temperatures 300--530 K was studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. Post-growth annealing transfers the top layer atoms downward to fill in vacancies in the lower layer, restoring the crystallinity of the thin film. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness. PH3 adsorption on Si(111)-7x7 was studied for various exposures between 0.3--60 L at room temperature by means of the scanning-tunneling-microscopy (STM). PH3-, PH2-, H-reacted, and unreacted adatoms can be identified by analyzing STM images at different sample biases. Most of PH3 adsorbs dissociatively on the surface at initial exposure, generating H and PH2 adsorption sites, followed by molecular adsorption of PH3. Rest atoms are more reactive than the adatoms and PH 2-reacted rest atom sites are also observed in STM images. Statistical analysis shows that center adatoms are more reactive than corner adatoms and the saturation P coverage is ˜0.22 ML. Finally, 900 K annealing of a PH 3 dosed surface results in a disordered, partially P-covered surface and PH3 dosing at 900 K forms the same surface reconstruction as a P2-adsorbed surface at similar temperature.

High-performance solid state supercapacitors assembling graphene interconnected networks in porous silicon electrode by electrochemical methods using 2,6-dihydroxynaphthalen.

PubMed

Romanitan, Cosmin; Varasteanu, Pericle; Mihalache, Iuliana; Culita, Daniela; Somacescu, Simona; Pascu, Razvan; Tanasa, Eugenia; Eremia, Sandra A V; Boldeiu, Adina; Simion, Monica; Radoi, Antonio; Kusko, Mihaela

2018-06-25

The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N 2 , 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.

Design of an Operando Positron Annihilation Gamma Spectrometer (OPAGS)

NASA Astrophysics Data System (ADS)

Satyal, Suman; Shastry, Kartik; Kalaskar, Sushant; Lim, Larry; Joglekar, Vibek; Weiss, Alexander

2009-10-01

Surface properties measured under UHV conditions cannot be extended to surfaces interacting with gases under realistic pressures due to surface reconstruction and other strong perturbations of the surface. Many surface probing techniques used till now have required UHV conditions to avoid data loss due to scattering of outgoing particles. Here we describe the design of an Operando Positron Annihilation Gamma Spectrometer (OPAGS) currently under construction at the University of Texas at Arlington. The new system will be capable of obtaining surface and defect specific chemical and charge state information from surfaces under realistic pressures. Differential pumping will be used to maintain the sample in a gas environment while the rest of the beam is under UHV. The Elemental content of the surface interacting with the gas environment will be determined from the Doppler broadened gamma spectra. This system will also include a time of flight (TOF) positron annihilation induced Auger spectrometer (TOF-PAES) for use in combined annihilation induced Auger and annihilation gamma measurements made under low pressure conditions.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

PubMed

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

PubMed Central

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

Actively addressed single pixel full-colour plasmonic display

NASA Astrophysics Data System (ADS)

Franklin, Daniel; Frank, Russell; Wu, Shin-Tson; Chanda, Debashis

2017-05-01

Dynamic, colour-changing surfaces have many applications including displays, wearables and active camouflage. Plasmonic nanostructures can fill this role by having the advantages of ultra-small pixels, high reflectivity and post-fabrication tuning through control of the surrounding media. However, previous reports of post-fabrication tuning have yet to cover a full red-green-blue (RGB) colour basis set with a single nanostructure of singular dimensions. Here, we report a method which greatly advances this tuning and demonstrates a liquid crystal-plasmonic system that covers the full RGB colour basis set, only as a function of voltage. This is accomplished through a surface morphology-induced, polarization-dependent plasmonic resonance and a combination of bulk and surface liquid crystal effects that manifest at different voltages. We further demonstrate the system's compatibility with existing LCD technology by integrating it with a commercially available thin-film-transistor array. The imprinted surface interfaces readily with computers to display images as well as video.

EDMOS in ultrathin FDSOI: Impact of the drift region properties

NASA Astrophysics Data System (ADS)

Litty, Antoine; Ortolland, Sylvie; Golanski, Dominique; Dutto, Christian; Cristoloveanu, Sorin

2016-11-01

The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Drain MOSFET (EDMOS) directly integrated in the ultra-thin SOI film (7 nm) of the 28 nm FDSOI CMOS technology node. Thanks to TCAD simulations, we analyse in detail the device behaviour as a function of the doping level and length of the drift region. The influence of the back-plane doping type and of the back-biasing schemes is discussed. DC measurements of fabricated EDMOS samples reveal promising performances in particular in terms of specific on-resistance versus breakdown voltage trade-off. The experimental results indicate that, even in an ultrathin film, the engineering of the drift region could be a lever to obtain integrated HVMOS (3.3-5 V).

Ultrawide band switching: gas and oil breakdown research

NASA Astrophysics Data System (ADS)

Agee, Forrest J.; Lehr, Jane M.; Prather, William D.; Scholfield, David W.

1997-10-01

The generation of Ultra-Wide Band Pulses nanoseconds is a challenging problem that involves generating pulses with 100 pico-second rise times and voltage of 500 kV with pulse widths of the order of less than one to a few nanoseconds. A critical step involves switching high voltages with precision. The use of both gas and oil for the switching insulating medium have been accomplished with varying results. The Phillips Laboratory is pursuing both media in the gas switched Hindenburg series of pulsers and in the study of oil switches that promise good performance in compact packages. This paper reports on progress in gas switching associated with the new H-5 pulser and with the use of earlier Hindenburg pulsers to investigate the UWB properties of oil switches. We compare the design strategies and techniques of oil and gas switching in the context of pulsers of interest.

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

NASA Astrophysics Data System (ADS)

Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.; Sarkar, Partha; Saha, Samar K.

2017-03-01

The paper reports the results of a systematic theoretical study on efficient recessed-gate, double-heterostructure, and normally-OFF metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs), HfAlOx/AlGaN on Al2O3 substrate. In device architecture, a thin AlGaN layer is used in the AlGaN graded barrier MIS-HEMTs that offers an excellent enhancement-mode device operation with threshold voltage higher than 5.3 V and drain current above 0.64 A/mm along with high on-current/off-current ratio over 107 and subthreshold slope less than 73 mV/dec. In addition, a high OFF-state breakdown voltage of 1200 V is achieved for a device with a gate-to-drain distance and field-plate length of 15 μm and 5.3 μm, respectively at a drain current of 1 mA/mm with a zero gate bias, and the substrate grounded. The numerical device simulation results show that in comparison to a conventional AlGaN/GaN MIS-HEMT of similar design, a graded barrier MIS-HEMT device exhibits a better interface property, remarkable suppression of leakage current, and a significant improvement of breakdown voltage for HfAlOx gate dielectric. Finally, the benefit of HfAlOx graded-barrier AlGaN MIS-HEMTs based switching devices is evaluated on an ultra-low-loss converter circuit.

Ultra-Low-Dropout Linear Regulator

NASA Technical Reports Server (NTRS)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2011-01-01

A radiation-tolerant, ultra-low-dropout linear regulator can operate between -150 and 150 C. Prototype components were demonstrated to be performing well after a total ionizing dose of 1 Mrad (Si). Unlike existing components, the linear regulator developed during this activity is unconditionally stable over all operating regimes without the need for an external compensation capacitor. The absence of an external capacitor reduces overall system mass/volume, increases reliability, and lowers cost. Linear regulators generate a precisely controlled voltage for electronic circuits regardless of fluctuations in the load current that the circuit draws from the regulator.

Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors.

PubMed

Fu, Keke; Wang, Rongbin; Katase, Takayoshi; Ohta, Hiromichi; Koch, Norbert; Duhm, Steffen

2018-03-28

Using photoemission spectroscopy, we show that the surface electronic structure of VO 2 is determined by the temperature-dependent metal-insulator phase transition and the density of oxygen vacancies, which depends on the temperature and ultrahigh vacuum (UHV) conditions. The atomically clean and stoichiometric VO 2 surface is insulating at room temperature and features an ultrahigh work function of up to 6.7 eV. Heating in UHV just above the phase transition temperature induces the expected metallic phase, which goes in hand with the formation of oxygen defects (up to 6% in this study), but a high work function >6 eV is maintained. To demonstrate the suitability of VO 2 as hole injection contact for organic semiconductors, we investigated the energy-level alignment with the prototypical organic hole transport material N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). Evidence for strong Fermi-level pinning and the associated energy-level bending in NPB is found, rendering an Ohmic contact for holes.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

PubMed Central

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-01-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

NASA Astrophysics Data System (ADS)

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

2016-05-01

Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V-1 sec-1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

PubMed Central

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode. PMID:25814770

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2014-09-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode.

Radon and material radiopurity assessment for the NEXT double beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cebrián, S.; Dafni, T.; González-Díaz, D.

The ”Neutrino Experiment with a Xenon TPC” (NEXT), intended to investigate the neutrinoless double beta decay using a high-pressure xenon gas TPC filled with Xe enriched in {sup 136}Xe at the Canfranc Underground Laboratory in Spain, requires ultra-low background conditions demanding an exhaustive control of material radiopurity and environmental radon levels. An extensive material screening process is underway for several years based mainly on gamma-ray spectroscopy using ultra-low background germanium detectors in Canfranc but also on mass spectrometry techniques like GDMS and ICPMS. Components from shielding, pressure vessel, electroluminescence and high voltage elements and energy and tracking readout planes havemore » been analyzed, helping in the final design of the experiment and in the construction of the background model. The latest measurements carried out will be presented and the implication on NEXT of their results will be discussed. The commissioning of the NEW detector, as a first step towards NEXT, has started in Canfranc; in-situ measurements of airborne radon levels were taken there to optimize the system for radon mitigation and will be shown too.« less

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Yoshimura, Yudai; Shiwaku, Rei; Tran, Lam Truc; Sekine, Tomohito; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-06-01

Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-μm-thick parylene-C films with high field-effect mobility (1.0 cm2 V-1 s-1) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m-2) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.

Nano-structured variable capacitor based on P(VDF-TrFE) copolymer and carbon nanotubes

NASA Astrophysics Data System (ADS)

Lakbita, I.; El-Hami, K.

2018-02-01

A newly organic capacitor was conceived with a variable capacitance using the inverse piezoelectric effect. The device consists of two parallel plates of carbon nanotubes (CNTs), known for their large surface area, high sensitivity and high electric conductivity, separated by a thin film of a dielectric layer of Polyinylidene fluoride and trifluoroehtylene (P(VDF-TrFE)) promising material for piezoelectric and ferroelectric properties. The obtained architecture is the CNT/PVDF-TrFE/CNT capacitor device. In this study, an ultra-thin film of P(VDF-TrFE) (54/46) with thickness of 20 nm was elaborated on highly oriented pyrolytic graphite (HOPG) by spin-coating. The morphology of the ultra-thin film and the mechanical behavior of CNT/P(VDF-TrFE)/CNT system were studied using the atomic force microscopy (AFM) combined with a lock-in amplifier in contact mode. All changes in applied voltage induce a change in thin film thickness according to the inverse piezoelectric effect that affect, consequently the capacitance. The results showed that the ratio of capacitance change ΔC to initial capacitance C0 is ΔC/C0=5%. This value is sufficient to use P(VDF-TrFE) as variable organic capacitor.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, A. A.; Hesjedal, T.; Diamond Light Source, Didcot OX11 0DE

We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined withmore » ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)« less

Order from the disorder: hierarchical nanostructures self-assembled from the gas phase (Conference Presentation)

NASA Astrophysics Data System (ADS)

Di Fonzo, Fabio

2017-02-01

The assembly of nanoscale building blocks in engineered mesostructures is one of the fundamental goals of nanotechnology. Among the various processes developed to date, self-assembly emerges as one of the most promising, since it relays solely on basic physico-chemical forces. Our research is focused on a new type of self-assembly strategy from the gas-phase: Scattered Ballistic Deposition (SBD). SBD arises from the interaction of a supersonic molecular beam with a static gas and enables the growth of quasi-1D hierarchical mesostructures. Overall, they resemble a forest composed of individual, high aspect-ratio, tree-like structures, assembled from amorphous or crystalline nanoparticles. SBD is a general occurring phenomenon and can be obtained with different vapour or cluster sources. In particular, SBD by Pulsed Laser Deposition is a convenient physical vapor technique that allows the generation of supersonic plasma jets from any inorganic material irrespective of melting temperature, preserving even the most complex stoichiometries. One of the advantages of PLD over other vapour deposition techniques is extremely wide operational pressure range, from UHV to ambient pressure. These characteristics allowed us to develop quasi-1D hierarchical nanostructures from different transition metal oxides, semiconductors and metals. The precise control offered by the SBD-PLD technique over material properties at the nanoscale allowed us to fabricate ultra-thin, high efficiency hierarchical porous photonic crystals with Bragg reflectivity up to 85%. In this communication we will discuss the application of these materials to solar energy harvesting and storage, stimuli responsive photonic crystals and smart surfaces with digital control of their wettability behaviour.

Multilayer Thin Film Polarizer Design for Far Ultraviolet using Induced Transmission and Absorption Technique

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Zukic, Muamer; Wilson, Michele M.; Park, Jung Ho; Torr, Douglas G.

1994-01-01

Good theoretical designs of far ultraviolet polarizers have been reported using a MgF2/Al/MgF2 three layer structure on a thick Al layer as a substrate. The thicknesses were determined to induce transmission and absorption of p-polarized light. In these designs Al optical constants were used from films produced in ultrahigh vacuum (UHV: 10(exp -10) torr). Reflectance values for polarizers fabricated in a conventional high vacuum (p approx. 10(exp -6 torr)) using the UHV design parameters differed dramatically from the design predictions. Al is a highly reactive material and is oxidized even in a high vacuum chamber. In order to solve the problem other metals have been studied. It is found that a larger reflectance difference is closely related to higher amplitude and larger phase difference of Fresnel reflection coefficients between two polarizations at the boundary of MgF2/metal. It is also found that for one material a larger angle of incidence from the surface normal brings larger amplitude and phase difference. Be and Mo are found good materials to replace Al. Polarizers designed for 121.6 nm with Be at 60 deg and with Mo at 70 deg are shown as examples.

Highly sensitive, self-powered and wearable electronic skin based on pressure-sensitive nanofiber woven fabric sensor.

PubMed

Zhou, Yuman; He, Jianxin; Wang, Hongbo; Qi, Kun; Nan, Nan; You, Xiaolu; Shao, Weili; Wang, Lidan; Ding, Bin; Cui, Shizhong

2017-10-11

The wearable electronic skin with high sensitivity and self-power has shown increasing prospects for applications such as human health monitoring, robotic skin, and intelligent electronic products. In this work, we introduced and demonstrated a design of highly sensitive, self-powered, and wearable electronic skin based on a pressure-sensitive nanofiber woven fabric sensor fabricated by weaving PVDF electrospun yarns of nanofibers coated with PEDOT. Particularly, the nanofiber woven fabric sensor with multi-leveled hierarchical structure, which significantly induced the change in contact area under ultra-low load, showed combined superiority of high sensitivity (18.376 kPa -1 , at ~100 Pa), wide pressure range (0.002-10 kPa), fast response time (15 ms) and better durability (7500 cycles). More importantly, an open-circuit voltage signal of the PPNWF pressure sensor was obtained through applying periodic pressure of 10 kPa, and the output open-circuit voltage exhibited a distinct switching behavior to the applied pressure, indicating the wearable nanofiber woven fabric sensor could be self-powered under an applied pressure. Furthermore, we demonstrated the potential application of this wearable nanofiber woven fabric sensor in electronic skin for health monitoring, human motion detection, and muscle tremor detection.

Enhancement of spin-Seebeck effect by inserting ultra-thin Fe{sub 70}Cu{sub 30} interlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kikuchi, D., E-mail: d.kikuchi@imr.tohoku.ac.jp; WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577; Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577

2015-02-23

We report the longitudinal spin-Seebeck effects (LSSEs) for Pt/Fe{sub 70}Cu{sub 30}/BiY{sub 2}Fe{sub 5}O{sub 12} (BiYIG) and Pt/BiYIG devices. The LSSE voltage was found to be enhanced by inserting an ultra-thin Fe{sub 70}Cu{sub 30} interlayer. This enhancement decays sharply with increasing the Fe{sub 70}Cu{sub 30} thickness, suggesting that it is not due to bulk phenomena, such as a superposition of conventional thermoelectric effects, but due to interface effects related to the Fe{sub 70}Cu{sub 30} interlayer. Combined with control experiments using Pt/Fe{sub 70}Cu{sub 30} devices, we conclude that the enhancement of the LSSE voltage in the Pt/Fe{sub 70}Cu{sub 30}/BiYIG devices is attributedmore » to the improvement of the spin-mixing conductance at the Pt/BiYIG interfaces.« less

Dual-mode MOS SOI nanoscale transistor serving as a building block for optical communication between blocks

NASA Astrophysics Data System (ADS)

Bendayan, Michael; Sabo, Roi; Zolberg, Roee; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-02-01

We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.

Flip the tip: an automated, high quality, cost-effective patch clamp screen.

PubMed

Lepple-Wienhues, Albrecht; Ferlinz, Klaus; Seeger, Achim; Schäfer, Arvid

2003-01-01

The race for creating an automated patch clamp has begun. Here, we present a novel technology to produce true gigaseals and whole cell preparations at a high rate. Suspended cells are flushed toward the tip of glass micropipettes. Seal, whole-cell break-in, and pipette/liquid handling are fully automated. Extremely stable seals and access resistance guarantee high recording quality. Data obtained from different cell types sealed inside pipettes show long-term stability, voltage clamp and seal quality, as well as block by compounds in the pM range. A flexible array of independent electrode positions minimizes consumables consumption at maximal throughput. Pulled micropipettes guarantee a proven gigaseal substrate with ultra clean and smooth surface at low cost.

Two-color detection with charge sensitive infrared phototransistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Sunmi, E-mail: kimsunmi@iis.u-tokyo.ac.jp; Kajihara, Yusuke; Komiyama, Susumu

2015-11-02

Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.

Nano-cone resistive memory for ultralow power operation.

PubMed

Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2017-03-24

SiN x -based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Mesocorticolimbic Connectivity and Volumetric Alterations in DCC Mutation Carriers.

PubMed

Vosberg, Daniel E; Zhang, Yu; Menegaux, Aurore; Chalupa, Amanda; Manitt, Colleen; Zehntner, Simone; Eng, Conrad; DeDuck, Kristina; Allard, Dominique; Durand, France; Dagher, Alain; Benkelfat, Chawki; Srour, Myriam; Joober, Ridha; Lepore, Franco; Rouleau, Guy; Théoret, Hugo; Bedell, Barry J; Flores, Cecilia; Leyton, Marco

2018-05-16

The axon guidance cue receptor DCC (deleted in colorectal cancer) plays a critical role in the organization of mesocorticolimbic pathways in rodents. To investigate whether this occurs in humans, we measured (1) anatomical connectivity between the substantia nigra/ventral tegmental area (SN/VTA) and forebrain targets, (2) striatal and cortical volumes, and (3) putatively associated traits and behaviors. To assess translatability, morphometric data were also collected in Dcc -haploinsufficient mice. The human volunteers were 20 DCC +/- mutation carriers, 16 DCC +/+ relatives, and 20 DCC +/+ unrelated healthy volunteers (UHVs; 28 females). The mice were 11 Dcc +/- and 16 wild-type C57BL/6J animals assessed during adolescence and adulthood. Compared with both control groups, the human DCC +/- carriers exhibited the following: (1) reduced anatomical connectivity from the SN/VTA to the ventral striatum [ DCC +/+ : p = 0.0005, r ( effect size ) = 0.60; UHV: p = 0.0029, r = 0.48] and ventral medial prefrontal cortex ( DCC +/+ : p = 0.0031, r = 0.53; UHV: p = 0.034, r = 0.35); (2) lower novelty-seeking scores ( DCC +/+ : p = 0.034, d = 0.82; UHV: p = 0.019, d = 0.84); and (3) reduced striatal volume ( DCC +/+ : p = 0.0009, d = 1.37; UHV: p = 0.0054, d = 0.93). Striatal volumetric reductions were also present in Dcc +/- mice, and these were seen during adolescence ( p = 0.0058, d = 1.09) and adulthood ( p = 0.003, d = 1.26). Together these findings provide the first evidence in humans that an axon guidance gene is involved in the formation of mesocorticolimbic circuitry and related behavioral traits, providing mechanisms through which DCC mutations might affect susceptibility to diverse neuropsychiatric disorders. SIGNIFICANCE STATEMENT Opportunities to study the effects of axon guidance molecules on human brain development have been rare. Here, the identification of a large four-generational family that carries a mutation to the axon guidance molecule receptor gene, DCC , enabled us to demonstrate effects on mesocorticolimbic anatomical connectivity, striatal volumes, and personality traits. Reductions in striatal volumes were replicated in DCC -haploinsufficient mice. Together, these processes might influence mesocorticolimbic function and susceptibility to diverse neuropsychiatric disorders. Copyright © 2018 the authors 0270-6474/18/384655-11$15.00/0.

Tunable plasmonic crystal

DOEpatents

Dyer, Gregory Conrad; Shaner, Eric A.; Reno, John L.; Aizin, Gregory

2015-08-11

A tunable plasmonic crystal comprises several periods in a two-dimensional electron or hole gas plasmonic medium that is both extremely subwavelength (.about..lamda./100) and tunable through the application of voltages to metal electrodes. Tuning of the plasmonic crystal band edges can be realized in materials such as semiconductors and graphene to actively control the plasmonic crystal dispersion in the terahertz and infrared spectral regions. The tunable plasmonic crystal provides a useful degree of freedom for applications in slow light devices, voltage-tunable waveguides, filters, ultra-sensitive direct and heterodyne THz detectors, and THz oscillators.

Mesoporous TiO2 nanosheets anchored on graphene for ultra long life Na-ion batteries.

PubMed

Zhang, Ruifang; Wang, Yuankun; Zhou, Han; Lang, Jinxin; Xu, Jingjing; Xiang, Yang; Ding, Shujiang

2018-06-01

Sodium-ion batteries, which have a similar electrochemical reaction mechanism to lithium-ion batteries, have been considered as one of the most potential lithium-ion battery alternatives due to the rich reserves of sodium. However, it is very hard to find appropriate electrode materials imputing the large radius of sodium-ion. TiO 2 is particularly interesting as anodes for sodium-ion batteries due to their reasonable operation voltage, cost, and nontoxicity. To obtain a better electrochemical property, mesoporous TiO 2 nanosheets (NSs)/reduced graphene oxide (rGO) composites have been synthesized via a scalable hydrothermal-solvothermal method with a subsequent calcination process. Benefitting from unique structure design, TiO 2 NSs@rGO exhibits a superior cycle stability (90 mAh g -1 after 10 000 cycles at a high current rate of 20 C) and satisfactory rate performance (97.3 mAh g -1 at 25 C). To our knowledge, such ultra long cycle life has not previously been reported.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure.

PubMed

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-15

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

NASA Astrophysics Data System (ADS)

Pérez-Tomás, Amador; Chikoidze, Ekaterine; Jennings, Michael R.; Russell, Stephen A. O.; Teherani, Ferechteh H.; Bove, Philippe; Sandana, Eric V.; Rogers, David J.

2018-03-01

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- Ga2O3, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

Mesoporous TiO2 nanosheets anchored on graphene for ultra long life Na-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, Ruifang; Wang, Yuankun; Zhou, Han; Lang, Jinxin; Xu, Jingjing; Xiang, Yang; Ding, Shujiang

2018-06-01

Sodium-ion batteries, which have a similar electrochemical reaction mechanism to lithium-ion batteries, have been considered as one of the most potential lithium-ion battery alternatives due to the rich reserves of sodium. However, it is very hard to find appropriate electrode materials imputing the large radius of sodium-ion. TiO2 is particularly interesting as anodes for sodium-ion batteries due to their reasonable operation voltage, cost, and nontoxicity. To obtain a better electrochemical property, mesoporous TiO2 nanosheets (NSs)/reduced graphene oxide (rGO) composites have been synthesized via a scalable hydrothermal-solvothermal method with a subsequent calcination process. Benefitting from unique structure design, TiO2 NSs@rGO exhibits a superior cycle stability (90 mAh g‑1 after 10 000 cycles at a high current rate of 20 C) and satisfactory rate performance (97.3 mAh g‑1 at 25 C). To our knowledge, such ultra long cycle life has not previously been reported.

Evaluating nanoscale ultra-thin metal films by means of lateral photovoltaic effect in metal-semiconductor structure

NASA Astrophysics Data System (ADS)

Zheng, Diyuan; Yu, Chongqi; Zhang, Qian; Wang, Hui

2017-12-01

Nanoscale metal-semiconductor (MS) structure materials occupy an important position in semiconductor and microelectronic field due to their abundant physical phenomena and effects. The thickness of metal films is a critical factor in determining characteristics of MS devices. How to detect or evaluate the metal thickness is always a key issue for realizing high performance MS devices. In this work, we propose a direct surface detection by use of the lateral photovoltaic effect (LPE) in MS structure, which can not only measure nanoscale thickness, but also detect the fluctuation of metal films. This method is based on the fact that the output of lateral photovoltaic voltage (LPV) is closely linked with the metal thickness at the laser spot. We believe this laser-based contact-free detection is a useful supplement to the traditional methods, such as AFM, SEM, TEM or step profiler. This is because these traditional methods are always incapable of directly detecting ultra-thin metal films in MS structure materials.

Ultra-fast switching blue phase liquid crystals diffraction grating stabilized by chiral monomer

NASA Astrophysics Data System (ADS)

Manda, Ramesh; Pagidi, Srinivas; Sarathi Bhattacharya, Surjya; Yoo, Hyesun; T, Arun Kumar; Lim, Young Jin; Lee, Seung Hee

2018-05-01

We have demonstrated an ultra-fast switching and efficient polymer stabilized blue phase liquid crystal (PS-BPLC) diffraction grating utilizing a chiral monomer. We have obtained a 0.5 ms response time by a novel polymer stabilization method which is three times faster than conventional PS-BPLC. In addition, the diffraction efficiency was improved 2% with a much wider phase range and the driving voltage to switch the device is reduced. The polarization properties of the diffracted beam are unaffected by this novel polymer stabilization. This device can be useful for future photonic applications.

In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

NASA Technical Reports Server (NTRS)

Yao, Huade; Snyder, Paul G.

1991-01-01

A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

Surface friction of rock in terrestrial and simulated lunar environments

NASA Technical Reports Server (NTRS)

Roepke, W. W.; Peng, S. S.

1975-01-01

The conventional probe-on-the rotating-disk concept was used to determine the surface friction in mineral probe/specimen interfaces. Nine rocks or minerals and two stainless steels were tested in both new (NT) and same track (ST) tests under three different pressure environments-atmospheric, UHV, and dry nitrogen. Each environment was further subdivided into two testing conditions, that is, ambient and elevated (135 C) temperatures. In NT tests, friction was the lowest in an atmospheric pressure condition for all rock types and increased to the largest in UHV ambient condition except for pyroxene and stainless steel. Friction values measured in dry nitrogen ambient condition lie between the two extremes. Heating tends to increase friction in atmospheric and dry nitrogen environment but decreases in UHV environment with the exception of stainless steel, basalt, and pyroxene. In ST tests, friction was the lowest in the first run and increased in subsequent runs except for stainless steel where the reverse was true. The increases leveled off after a few runs ranging from the second to the seventh depending on rock types.

Ultrahigh Vacuum Scanning Tunneling Microscopy and Spectroscopy of Single-Walled Carbon Nanotubes Interfaced with Silicon Surfaces

NASA Astrophysics Data System (ADS)

Albrecht, Peter; Lyding, Joseph

2008-03-01

The UHV-STM was used to examine SWNTs directly interfaced with hydrogen-passivated Si(100). Dry contact transfer (DCT) [1] enabled the UHV deposition of SWNTs with minimal disruption of the atomically flat Si(100)-2x1:H surface. Isolated, rather than bundled, SWNTs could be routinely located for atomically resolved imaging, tunneling I-V spectroscopy [2], lateral manipulation [3], and proximal substrate modification. Weakly adsorbed SWNTs initially unstable in the presence of the rastered STM tip could be stabilized by depassivating the underlying H-Si(100) surface via UHV-STM electron-stimulated H desorption [4], which in the case of one chiral semiconducting SWNT also promoted the local alignment of the zigzag symmetry direction on the underside of the tube with the clean Si dimer rows [5]. The growing body of first-principles simulations of the SWNT/Si(100) system [6] was drawn upon in our interpretation of such local perturbations. [1] APL 83, 5029 (2003). [2] Nanotechnology 18, 095204 (2007). [3] Small 3, 146 (2007). [4] Nanotechnology 18, 125302 (2007). [5] Small 3, 1402 (2007). [6] JAP 100, 124304 (2006).

Operando Positron Annihilation Gamma Spectrometer (OPAGS)

NASA Astrophysics Data System (ADS)

Satyal, S.; Shastry, K.; Mukherjee, S.; Weiss, A. H.

2009-03-01

Surface properties measured under UHV conditions cannot be extended to surfaces interacting with gases under realistic pressures due to surface reconstruction and other strong perturbations of the surface. Surface probing techniques require UHV conditions to perform efficiently and avoid data loss due to scattering of outgoing particles. This poster describes the design of an Operando Positron Annihilation Gamma Spectrometer (OPAGS) currently under construction at the University of Texas at Arlington. The new system will be capable of obtaining surface and defect specific chemical and charge state information from surfaces under realistic pressures. Differential pumping will be used to maintain the sample in a gas environment while the rest of the beam is under UHV. Elemental content of the surface interacting with the gas environment will be determined from the Doppler broadened gamma spectra. This system will also include a time of flight (TOF) Auger spectrometer which correlates with the results of the Doppler measurements at lower pressures. By employing the unique capabilities of OPAGS together with those of the TOF PAES spectroscopy the charge transfer mechanisms at the surface in catalytic systems can be understood.

Ultrahigh-viscosity hydroxypropylmethylcellulose blunts postprandial glucose after a breakfast meal in women.

PubMed

Dow, Shireen; Pritchett, Kelly L; Hawk, Susan; Herrington, Stefanie J; Gee, David L

2012-04-01

To determine the effects of two water-soluble dietary fibers, ultrahigh-viscosity hydroxypropylmethylcellulose (UHV-HPMC, nonfermentable) and psyllium fiber (fermentable), on postprandial glucose and second meal effects. In a single-blind crossover design, 12 healthy adult subjects were given standardized, premeasured breakfast and lunch meals with either 4 g of the fiber supplements or a placebo. Blood glucose was measured with a continuous blood glucose monitoring system (DexCom Seven Plus, San Diego, CA). Subjects consuming UHV-HPMC had significantly (p < 0.05) lower blood glucose area under the curve (AUC) 2 hours after breakfast than those receiving a placebo. Subjects consuming psyllium also tended to have lower glucose levels than the placebo group. Peak glucose concentration following breakfast was significantly (p < 0.01) less with UHV-HPMC when compared with the placebo. No significant differences in AUC or peak glucose concentration between treatments following the second meal (lunch) were detected, suggesting no residual effect from the fiber supplements. Supplementation with viscous water-soluble fibers may be an effective means of reducing the glycemic response of a meal in healthy adults.

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

PubMed

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

PubMed

Nan, Tianxiang; Zhou, Ziyao; Liu, Ming; Yang, Xi; Gao, Yuan; Assaf, Badih A; Lin, Hwaider; Velu, Siddharth; Wang, Xinjun; Luo, Haosu; Chen, Jimmy; Akhtar, Saad; Hu, Edward; Rajiv, Rohit; Krishnan, Kavin; Sreedhar, Shalini; Heiman, Don; Howe, Brandon M; Brown, Gail J; Sun, Nian X

2014-01-14

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

Design of an Integrated Thermoelectric Generator Power Converter for Ultra-Low Power and Low Voltage Body Energy Harvesters aimed at EEG/ECG Active Electrodes

NASA Astrophysics Data System (ADS)

Ataei, Milad; Robert, Christian; Boegli, Alexis; Farine, Pierre-André

2014-11-01

This paper describes a design procedure for an efficient body thermal energy harvesting integrated power converter. This procedure is based on loss examination for a selfpowered medical device. All optimum system parameters are calculated respecting the transducer constraints and the application form factor. It is found that it is possible to optimize converter's working frequency with proper design of its pulse generator circuit. At selected frequency, it has been demonstrated that wide area voltage doubler can be eliminated at the expense of wider switches. With this method, more than 60% efficiency is achieved in simulation for just 20mV transducer output voltage and 30% of entire chip area is saved.

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

A non-volatile flip-flop based on diode-selected PCM for ultra-low power systems

NASA Astrophysics Data System (ADS)

Ye, Yong; Du, Yuan; Gao, Dan; Kang, Yong; Song, Zhitang; Chen, Bomy

2016-10-01

As the process technology is continuously shrinking, low power consumption is a major issue in VLSI Systems-on-Chip (SoCs), especially for standby-power-critical applications. Recently, the emerging CMOS-compatible non-volatile memories (NVMs), such as Phase Change Memory (PCM), have been used as on-chip storage elements, which can obtain non-volatile processing, nearly-zero standby power and instant-on capability. PCM has been considered as the best candidate for the next generation of NVMs for its low cost, high density and high resistance transformation ratio. In this paper, for the first time, we present a diode-selected PCM based non-volatile flip-flop (NVFF) which is optimized for better power consumption and process variation tolerance. With dual trench isolation process, the diode-selected PCM realizes ultra small area, which is very suitable for multi-context configuration and large scale flip-flops matrix. Since the MOS-selected PCM is hard to shrink further due to large amount of PCM write current, the proposed NVFF achieves higher power efficiency without loss of current driving capability. Using the 40nm manufacturing process, the area of the cell (1D1R) is as small as 0.016 μm2. Simulation results show that the energy consumption during the recall operation is 62 fJ with 1.1 standard supply voltage, which is reduced by 54.9% compared to the previous 2T2R based NVFF. When the supply voltage reduces to 0.7 V, the recall energy is as low as 17 fJ. With the great advantages in cell size and energy, the proposed diode-selected NVFF is very applicable and cost-effective for ULP systems.

Tunneling spin polarization in planar tunnel junctions: measurements using NbN superconducting electrodes and evidence for Kondo-assisted tunneling

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

2006-03-01

The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.

Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

NASA Astrophysics Data System (ADS)

Elsobky, Mourad; Mahsereci, Yigit; Keck, Jürgen; Richter, Harald; Burghartz, Joachim N.

2017-09-01

Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI) substrate to form a Hybrid System-in-Foil (HySiF), which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing) of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA) in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC). The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC), a differential difference amplifier (DDA), and a 10-bit successive approximation register (SAR) ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

In-line charge-trapping characterization of dielectrics for sub-0.5-um CMOS technologies

NASA Astrophysics Data System (ADS)

Roy, Pradip K.; Chacon, Carlos M.; Ma, Yi; Horner, Gregory

1997-09-01

The advent of ultra-large and giga-scale-integration (ULSI/GSI) has placed considerable emphasis on the development of new gate oxides and interlevel dielectrics capable of meeting strict performance and reliability requirements. The costs and demands associated with ULSI fabrication have in turn fueled the need for cost-effective, rapid and accurate in-line characterization techniques for evaluating dielectric quality. The use of non-contact surface photovoltage characterization techniques provides cost-effective rapid feedback on dielectric quality, reducing costs through the reutilization of control wafers and the elimination of processing time. This technology has been applied to characterize most of the relevant C-V parameters, including flatband voltage (Vfb), density of interface traps (Dit), mobile charge density (Qm), oxide thickness (Tox), oxide resistivity (pox) and total charge (Qtot) for gate and interlevel (ILO) oxides. A novel method of measuring tunneling voltage by this technique on various gate oxides is discussed. For ILO, PECVD and high density plasma dielectrics, surface voltage maps are also presented. Measurements of near-surface silicon quality are described, including minority carrier generation lifetime, and examples of their application in diagnosing manufacturing problems.

Overview of SIMS-Based Experimental Studies of Tracer Diffusion in Solids and Application to Mg Self-Diffusion

DOE PAGES

Kulkarni, Nagraj S.; Bruce Warmack, Robert J.; Radhakrishnan, Bala; ...

2014-09-23

Tracer diffusivities provide the most fundamental information on diffusion in materials and are the foundation of robust diffusion databases. Compared to traditional radiotracer techniques that utilize radioactive isotopes, the secondary ion mass spectrometry (SIMS) based thin-film technique for tracer diffusion is based on the use of enriched stable isotopes that can be accurately profiled using SIMS. Experimental procedures & techniques that are utilized for the measurement of tracer diffusion coefficients are presented for pure magnesium, which presents some unique challenges due to the ease of oxidation. The development of a modified Shewmon-Rhines diffusion capsule for annealing Mg and an ultra-highmore » vacuum (UHV) system for sputter deposition of Mg isotopes are discussed. Optimized conditions for accurate SIMS depth profiling in polycrystalline Mg are provided. An automated procedure for the correction of heat-up and cool-down times during tracer diffusion annealing is discussed. The non-linear fitting of a SIMS depth profile data using the thin film Gaussian solution to obtain the tracer diffusivity along with the background tracer concentration and tracer film thickness is discussed. An Arrhenius fit of the Mg self-diffusion data obtained using the low-temperature SIMS measurements from this study and the high-temperature radiotracer measurements of Shewmon and Rhines (1954) was found to be a good representation of both types of diffusion data that cover a broad range of temperatures between 250 - 627° C (523 900 K).« less

Proposal for an All-Spin Artificial Neural Network: Emulating Neural and Synaptic Functionalities Through Domain Wall Motion in Ferromagnets.

PubMed

Sengupta, Abhronil; Shim, Yong; Roy, Kaushik

2016-12-01

Non-Boolean computing based on emerging post-CMOS technologies can potentially pave the way for low-power neural computing platforms. However, existing work on such emerging neuromorphic architectures have either focused on solely mimicking the neuron, or the synapse functionality. While memristive devices have been proposed to emulate biological synapses, spintronic devices have proved to be efficient at performing the thresholding operation of the neuron at ultra-low currents. In this work, we propose an All-Spin Artificial Neural Network where a single spintronic device acts as the basic building block of the system. The device offers a direct mapping to synapse and neuron functionalities in the brain while inter-layer network communication is accomplished via CMOS transistors. To the best of our knowledge, this is the first demonstration of a neural architecture where a single nanoelectronic device is able to mimic both neurons and synapses. The ultra-low voltage operation of low resistance magneto-metallic neurons enables the low-voltage operation of the array of spintronic synapses, thereby leading to ultra-low power neural architectures. Device-level simulations, calibrated to experimental results, was used to drive the circuit and system level simulations of the neural network for a standard pattern recognition problem. Simulation studies indicate energy savings by  ∼  100× in comparison to a corresponding digital/analog CMOS neuron implementation.

Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion.

PubMed

Araneo, Rodolfo; Falconi, Christian

2013-07-05

Quasi-1D piezoelectric nanostructures may offer unprecedented sensitivity for transducing minuscule input mechanical forces into high output voltages due to both scaling laws and increased piezoelectric coefficients. However, until now both theoretical and experimental studies have suggested that, for a given mechanical force, lateral bending of piezoelectric nanowires results in lower output electric potentials than vertical compression. Here we demonstrate that this result only applies to nanostructures with a constant cross-section. Moreover, though it is commonly believed that the output electric potential of a strained piezo-semiconductive device can only be reduced by the presence of free charges, we show that the output piezopotential of laterally bent tapered nanostructures, with typical doping levels and very small input forces, can be even increased up to two times by free charges.Our analyses confirm that, though not optimal for piezoelectric energy harvesting, lateral bending of tapered nanostructures with typical doping levels can be ideal for transducing tiny input mechanical forces into high and accessible piezopotentials. Our results provide guidelines for designing high-performance piezo-nano-devices for energy harvesting, mechanical sensing, piezotronics, piezo-phototronics, and piezo-controlled chemical reactions, among others.

Highly charged ion beams and their applications

NASA Astrophysics Data System (ADS)

Marler, Joan

2018-01-01

While much previous work with highly charged ions has been performed with the ions in the plasma state in which they were formed, beams of highly charged ions hold promise for exciting new experiments. Specifically low energy beams with a high degree of charge state purity are a prerequisite for momentum resolved cross section measurements and for efficient loading of highly charged ions into UHV traps for spectroscopy. The Clemson University facility is optimized for the delivery of such beams of highly charged ions with low kinetic energies. Near term experiments include energy resolved charge exchange with neutral targets.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

On the role of ultra-thin oxide cathode synthesis on the functionality of micro-solid oxide fuel cells: Structure, stress engineering and in situ observation of fuel cell membranes during operation

NASA Astrophysics Data System (ADS)

Lai, Bo-Kuai; Kerman, Kian; Ramanathan, Shriram

Microstructure and stresses in dense La 0.6Sr 0.4Co 0.8Fe 0.2O 3 (LSCF) ultra-thin films have been investigated to increase the physical thickness of crack-free cathodes and active area of thermo-mechanically robust micro-solid oxide fuel cell (μSOFC) membranes. Processing protocols employ low deposition rates to create a highly granular nanocrystalline microstructure in LSCF thin films and high substrate temperatures to produce linear temperature-dependent stress evolution that is dominated by compressive stresses in μSOFC membranes. Insight and trade-off on the synthesis are revealed by probing microstructure evolution and electrical conductivity in LSCF thin films, in addition to in situ monitoring of membrane deformation while measuring μSOFC performance at varying temperatures. From these studies, we were able to successfully fabricate failure-resistant square μSOFC (LSCF/YSZ/Pt) membranes with width of 250 μm and crack-free cathodes with thickness of ∼70 nm. Peak power density of ∼120 mW cm -2 and open circuit voltage of ∼0.6 V at 560 °C were achieved on a μSOFC array chip containing ten such membranes. Mechanisms affecting fuel cell performance are discussed. Our results provide fundamental insight to pathways of microstructure and stress engineering of ultra-thin, dense oxide cathodes and μSOFC membranes.

Controlling Low-Rate Signal Path Microdischarge for an Ultra-Low-Background Proportional Counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mace, Emily K.; Aalseth, Craig E.; Bonicalzi, Ricco

2013-05-01

ABSTRACT Pacific Northwest National Laboratory (PNNL) has developed an ultra-low-background proportional counter (ULBPC) made of high purity copper. These detectors are part of an ultra-low-background counting system (ULBCS) in the newly constructed shallow underground laboratory at PNNL (at a depth of ~30 meters water-equivalent). To control backgrounds, the current preamplifier electronics are located outside the ULBCS shielding. Thus the signal from the detector travels through ~1 meter of cable and is potentially susceptible to high voltage microdischarge and other sources of electronic noise. Based on initial successful tests, commercial cables and connectors were used for this critical signal path. Subsequentmore » testing across different batches of commercial cables and connectors, however, showed unwanted (but still low) rates of microdischarge noise. To control this noise source, two approaches were pursued: first, to carefully validate cables, connectors, and other commercial components in this critical signal path, making modifications where necessary; second, to develop a custom low-noise, low-background preamplifier that can be integrated with the ULBPC and thus remove most commercial components from the critical signal path. This integrated preamplifier approach is based on the Amptek A250 low-noise charge-integrating preamplifier module. The initial microdischarge signals observed are presented and characterized according to the suspected source. Each of the approaches for mitigation is described, and the results from both are compared with each other and with the original performance seen with commercial cables and connectors.« less

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

An ultra low power ECG signal processor design for cardiovascular disease detection.

PubMed

Jain, Sanjeev Kumar; Bhaumik, Basabi

2015-08-01

This paper presents an ultra low power ASIC design based on a new cardiovascular disease diagnostic algorithm. This new algorithm based on forward search is designed for real time ECG signal processing. The algorithm is evaluated for Physionet PTB database from the point of view of cardiovascular disease diagnosis. The failed detection rate of QRS complex peak detection of our algorithm ranges from 0.07% to 0.26% for multi lead ECG signal. The ASIC is designed using 130-nm CMOS low leakage process technology. The area of ASIC is 1.21 mm(2). This ASIC consumes only 96 nW at an operating frequency of 1 kHz with a supply voltage of 0.9 V. Due to ultra low power consumption, our proposed ASIC design is most suitable for energy efficient wearable ECG monitoring devices.

Novel Ultrahigh Vacuum System for Chip-Scale Trapped Ion Quantum Computing

NASA Astrophysics Data System (ADS)

Chen, Shaw-Pin; Trapped Team

2011-05-01

This presentation reports the experimental results of an ultrahigh vacuum (UHV) system as a scheme to implement scalable trapped-ion quantum computers that use micro-fabricated ion traps as fundamental building blocks. The novelty of this system resides in our design, material selection, mechanical liability, low complexity of assembly, and reduced signal interference between DC and RF electrodes. Our system utilizes RF isolation and onsite-filtering topologies to attenuate AC signals generated from the resonator. We use a UHV compatible printed circuit board (PCB) material to perform DC routing, while the RF high and RF ground received separated routing via wire-wrapping. The standard PCB fabrication process enabled us to implement ceramic-based filter components adjacent to the chip trap. The DC electrodes are connected to air-side electrical feed through using four 25D adaptors made with polyether ether ketone (PEEK). The assembly process of this system is straight forward and in-chamber structure is self-supporting. We report on initial testing of this concept with a linear chip trap fabricated by the Sandia National Labs.

Perspective: Chemical reactions in ionic liquids monitored through the gas (vacuum)/liquid interface.

PubMed

Maier, F; Niedermaier, I; Steinrück, H-P

2017-05-07

This perspective analyzes the potential of X-ray photoelectron spectroscopy under ultrahigh vacuum (UHV) conditions to follow chemical reactions in ionic liquids in situ. Traditionally, only reactions occurring on solid surfaces were investigated by X-ray photoelectron spectroscopy (XPS) in situ. This was due to the high vapor pressures of common liquids or solvents, which are not compatible with the required UHV conditions. It was only recently realized that the situation is very different when studying reactions in Ionic Liquids (ILs), which have an inherently low vapor pressure, and first studies have been performed within the last years. Compared to classical spectroscopy techniques used to monitor chemical reactions, the advantage of XPS is that through the analysis of their core levels all relevant elements can be quantified and their chemical state can be analyzed under well-defined (ultraclean) conditions. In this perspective, we cover six very different reactions which occur in the IL, with the IL, or at an IL/support interface, demonstrating the outstanding potential of in situ XPS to gain insights into liquid phase reactions in the near-surface region.

Sodium-oxygen batteries with alkyl-carbonate and ether based electrolytes.

PubMed

Kim, Jinsoo; Lim, Hee-Dae; Gwon, Hyeokjo; Kang, Kisuk

2013-03-14

Recently, metal-air batteries, such as lithium-air and zinc-air systems, have been studied extensively as potential candidates for ultra-high energy density storage devices because of their exceptionally high capacities. Here, we report such an electrochemical system based on sodium, which is abundant and inexpensive. Two types of sodium-oxygen batteries were introduced and studied, i.e. with carbonate and non-carbonate electrolytes. Both types could deliver specific capacities (2800 and 6000 mA h g(-1)) comparable to that of lithium-oxygen batteries but with slightly lower discharge voltages (2.3 V and 2.0 V). The reaction mechanisms of sodium-oxygen batteries in carbonate and non-carbonate electrolytes were investigated and compared with those of lithium-oxygen batteries.

High Density Memory Based on Quantum Device Technology

NASA Technical Reports Server (NTRS)

vanderWagt, Paul; Frazier, Gary; Tang, Hao

1995-01-01

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

Ultra-low voltage electrowetting using graphite surfaces.

PubMed

Lomax, Deborah J; Kant, Pallav; Williams, Aled T; Patten, Hollie V; Zou, Yuqin; Juel, Anne; Dryfe, Robert A W

2016-10-26

The control of wetting behaviour underpins a variety of important applications from lubrication to microdroplet manipulation. Electrowetting is a powerful method to achieve external wetting control, by exploiting the potential-dependence of the liquid contact angle with respect to a solid substrate. Addition of a dielectric film to the surface of the substrate, which insulates the electrode from the liquid thereby suppressing electrolysis, has led to technological advances such as variable focal-length liquid lenses, electronic paper and the actuation of droplets in lab-on-a-chip devices. The presence of the dielectric, however, necessitates the use of large bias voltages (frequently in the 10-100 V range). Here we describe a simple, dielectric-free approach to electrowetting using the basal plane of graphite as the conducting substrate: unprecedented changes in contact angle for ultra-low voltages are seen below the electrolysis threshold (50° with 1 V for a droplet in air, and 100° with 1.5 V for a droplet immersed in hexadecane), which are shown to be reproducible, stable over 100 s of cycles and free of hysteresis. Our results dispel conventional wisdom that reversible, hysteresis-free electrowetting can only be achieved on solid substrates with the use of a dielectric. This work paves the way for the development of a new generation of efficient electrowetting devices using advanced materials such as graphene and monolayer MoS 2 .

Photonic generation of ultra-wide-band doublet pulse through monolithic integration of tapered directional coupler and quantum well waveguide.

PubMed

Kuo, Yu-Zheng; Wu, Jui-Pin; Wu, Tsu-Hsiu; Chiu, Yi-Jen

2012-10-22

We proposed and demonstrated a novel scheme of photonic ultra-wide-band (UWB) doublet pulse based on monolithic integration of tapered optical-direction coupler (TODC) and multiple-quantum-well (MQW) waveguide. TODC is formed by a top tapered MQW waveguide vertically integrating with an underneath passive waveguide. Through simultaneous field-driven optical index- and absorption- change in MQW, the partial optical coupling in TODC can be used to get a valley-shaped of optical transmission against voltage. Therefore, doublet-enveloped optical pulse can be realized by high-speed and high-efficient conversion of input electrical pulse. By just adjusting bias through MQW, 1530 nm photonic UWB doublet optical pulse with 75-ps pulse width, below -41.3 dBm power, 125% fractional bandwidth, and 7.5 GHz of -10 dB bandwidth has been demonstrated, fitted into FCC requirement (3.1 GHz~10.6 GHz). Doublet-pulse data transmission generated in optical fiber is also performed for further characterization, exhibiting a successful 1.25 Gb/s error-free transmission. It suggests such optoelectronic integration template can be applied for photonic UWB generation in fiber-based communications.

Exploiting basic principles to control the selectivity of the vapor phase catalytic oxidative cross-coupling of primary alcohols over nanoporous gold catalysts

DOE PAGES

Wang, Lu-Cun; Stowers, Kara J.; Zugic, Branko; ...

2015-05-20

It is important to achieve high selectivity for high volume chemical synthesis in order to lower energy consumption through reduction in waste. Here, we report the selective synthesis of methyl esters—methyl acetate and methyl butyrate—through catalytic O 2-assisted cross-coupling of methanol with ethanol or 1-butanol using activated, support-free nanoporous gold (npAu). Both well-controlled studies on ingots in UHV and experiments under ambient pressure catalytic conditions on both ingots and microspherical hollow shell catalysts reveal guiding principles for controlling selectivity. Under UHV conditions, the ester products of the cross-coupling of methanol with both ethanol and 1-butanol evolve near room temperature inmore » temperature-programmed reaction studies, indicating that the reactions occur facilely. Furthermore, under steady-state catalytic operation, high stable activity was observed for cross-coupling in flowing gaseous reactant mixtures at atmospheric pressure and 423 K with negligible combustion. Optimum selectivity for cross-coupling is obtained in methanol-rich mixtures due to a combination of two factors: (1) the relative coverage of the respective alkoxys and (2) the relative facility of their β-H elimination. The relative coverage of the alkoxys is governed by van der Waal’s interactions between the alkyl groups and the surface; here, we demonstrate the importance of these weak interactions in a steady-state catalytic process.« less

Nuclear nanoprobe development for visualization of three-dimensional nanostructures

NASA Astrophysics Data System (ADS)

Takai, M.; Abo, S.; Wakaya, F.; Kikuchi, T.; Sawaragi, H.

2007-08-01

A nanoprobe system, having a liquid metal ion source with a compact electrostatic accelerating column with a maximum accelerating voltage of 200 kV and an ultra high vacuum chamber, giving rise to the enhanced sensitivity because of the large scattering cross-section, has been designed for analysis of nanostructures. The focusing performance of the probes down to 10 nm was measured and compared with the simulation. Time-of-flight (TOF) RBS using a micro channel plate (MCP) further increases the sensitivity because of the increase in acceptance angle, which realizes the visualization of nanostructures with a beam spot diameter less than 10 nm with less probe damage.

A wireless strain sensor consumes less than 10 mW

NASA Astrophysics Data System (ADS)

Hew, Y.; Deshmukh, S.; Huang, H.

2011-10-01

This paper presents a wireless strain sensor that consumes about 9 mW. To achieve such an ultra-low power operation, a voltage-controlled oscillator (VCO) is utilized to convert the direct-current (DC) strain signal to a high frequency oscillatory signal. This oscillatory signal is then transmitted using an unpowered wireless transponder (Huang et al 2011 Smart Mater. Struct. 20 015017). A photocell-based energy harvester was developed to power the wireless strain sensor. The energy harvested from a flash light placed at 65 cm away is sufficient to power the wireless strain sensor continuously. The implementation of the wireless strain sensor and its characterization are presented.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

PubMed

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-12-05

A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e - /s at 60 °C, an ultra-low read noise of 0.90 e - ·rms, a high full well capacity (FWC) of 4100 e - , and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

Cluster secondary ion mass spectrometry microscope mode mass spectrometry imaging.

PubMed

Kiss, András; Smith, Donald F; Jungmann, Julia H; Heeren, Ron M A

2013-12-30

Microscope mode imaging for secondary ion mass spectrometry is a technique with the promise of simultaneous high spatial resolution and high-speed imaging of biomolecules from complex surfaces. Technological developments such as new position-sensitive detectors, in combination with polyatomic primary ion sources, are required to exploit the full potential of microscope mode mass spectrometry imaging, i.e. to efficiently push the limits of ultra-high spatial resolution, sample throughput and sensitivity. In this work, a C60 primary source was combined with a commercial mass microscope for microscope mode secondary ion mass spectrometry imaging. The detector setup is a pixelated detector from the Medipix/Timepix family with high-voltage post-acceleration capabilities. The system's mass spectral and imaging performance is tested with various benchmark samples and thin tissue sections. The high secondary ion yield (with respect to 'traditional' monatomic primary ion sources) of the C60 primary ion source and the increased sensitivity of the high voltage detector setup improve microscope mode secondary ion mass spectrometry imaging. The analysis time and the signal-to-noise ratio are improved compared with other microscope mode imaging systems, all at high spatial resolution. We have demonstrated the unique capabilities of a C60 ion microscope with a Timepix detector for high spatial resolution microscope mode secondary ion mass spectrometry imaging. Copyright © 2013 John Wiley & Sons, Ltd.

A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

PubMed Central

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-01-01

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation. PMID:25806868

A CMOS pressure sensor tag chip for passive wireless applications.

PubMed

Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

2015-03-23

This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

Cycling excitation process: An ultra efficient and quiet signal amplification mechanism in semiconductor

NASA Astrophysics Data System (ADS)

Liu, Yu-Hsin; Yan, Lujiang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Zhou, Yuchun; Sham, L. J.; Lo, Yu-Hwa

2015-08-01

Signal amplification, performed by transistor amplifiers with its merit rated by the efficiency and noise characteristics, is ubiquitous in all electronic systems. Because of transistor thermal noise, an intrinsic signal amplification mechanism, impact ionization was sought after to complement the limits of transistor amplifiers. However, due to the high operation voltage (30-200 V typically), low power efficiency, limited scalability, and, above all, rapidly increasing excess noise with amplification factor, impact ionization has been out of favor for most electronic systems except for a few applications such as avalanche photodetectors and single-photon Geiger detectors. Here, we report an internal signal amplification mechanism based on the principle of the phonon-assisted cycling excitation process (CEP). Si devices using this concept show ultrahigh gain, low operation voltage, CMOS compatibility, and, above all, quantum limit noise performance that is 30 times lower than devices using impact ionization. Established on a unique physical effect of attractive properties, CEP-based devices can potentially revolutionize the fields of semiconductor electronics.

Actively addressed single pixel full-colour plasmonic display

PubMed Central

Franklin, Daniel; Frank, Russell; Wu, Shin-Tson; Chanda, Debashis

2017-01-01

Dynamic, colour-changing surfaces have many applications including displays, wearables and active camouflage. Plasmonic nanostructures can fill this role by having the advantages of ultra-small pixels, high reflectivity and post-fabrication tuning through control of the surrounding media. However, previous reports of post-fabrication tuning have yet to cover a full red-green-blue (RGB) colour basis set with a single nanostructure of singular dimensions. Here, we report a method which greatly advances this tuning and demonstrates a liquid crystal-plasmonic system that covers the full RGB colour basis set, only as a function of voltage. This is accomplished through a surface morphology-induced, polarization-dependent plasmonic resonance and a combination of bulk and surface liquid crystal effects that manifest at different voltages. We further demonstrate the system's compatibility with existing LCD technology by integrating it with a commercially available thin-film-transistor array. The imprinted surface interfaces readily with computers to display images as well as video. PMID:28488671

Stand alone, low current measurements on possible sensing platforms via Arduino Uno microcontroller with modified commercially available sensors

NASA Astrophysics Data System (ADS)

Tanner, Meghan; Henson, Gabriel; Senevirathne, Indrajith

Advent of cost-effective solid-state sensors has spurred an immense interest in microcontrollers, in particular Arduino microcontrollers. These include serious engineering and physical science applications due to their versatility and robustness. An Arduino microcontroller coupled with a commercially available sensor has been used to methodically measure, record, and explore low currents, low voltages, and corresponding dissipated power towards assessing secondary physical properties in a select set of engineered systems. System was assembled via breadboard, wire, and simple soldering with an Arduino Uno with ATmega328P microcontroller connected to a PC. The microcontroller was programmed with Arduino software while the bootloader was used to upload the code. High-side measurement INA169 current shunt monitor was used to measure corresponding low to ultra-low currents and voltages. A collection of measurements was obtained via the sensor and was compared with measurements from standardized devices to assess reliability and uncertainty. Some sensors were modified/hacked to improve the sensitivity of the measurements.

Stimulated Electron Desorption Studies from Microwave Vacuum Electronics / High Power Microwave Materials

DTIC Science & Technology

2010-02-11

purchase a new gun. Mr. Mike Ackeret ( Transfer Engineering Inc.) Transfer Engineering’s expertise in specialty UHV work and machining propelled...modifications they helped design for the test stand. With UNLV guidance, Transfer Engineering designed and built the original UNLV SEE Test Stand...Staib electron gun, an isolated beam drift tube, a hexanode delay line with a chevron microchannel plate (MCP) stack, an isolated grid, an isolated

Ultra-thin MoS₂ coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

PubMed

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

2018-01-02

Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.

Transparent actuators and robots based on single-layer superaligned carbon nanotube sheet and polymer composites.

PubMed

Chen, Luzhuo; Weng, Mingcen; Zhang, Wei; Zhou, Zhiwei; Zhou, Yi; Xia, Dan; Li, Jiaxin; Huang, Zhigao; Liu, Changhong; Fan, Shoushan

2016-03-28

Transparent actuators have been attracting emerging interest recently, as they demonstrate potential applications in the fields of invisible robots, tactical displays, variable-focus lenses, and flexible cellular phones. However, previous technologies did not simultaneously realize macroscopic transparent actuators with advantages of large-shape deformation, low-voltage-driven actuation and fast fabrication. Here, we develop a fast approach to fabricate a high-performance transparent actuator based on single-layer superaligned carbon nanotube sheet and polymer composites. Various advantages of single-layer nanotube sheets including high transparency, considerable conductivity, and ultra-thin dimensions together with selected polymer materials completely realize all the above required advantages. Also, this is the first time that a single-layer nanotube sheet has been used to fabricate actuators with high transparency, avoiding the structural damage to the single-layer nanotube sheet. The transparent actuator shows a transmittance of 72% at the wavelength of 550 nm and bends remarkably with a curvature of 0.41 cm(-1) under a DC voltage for 5 s, demonstrating a significant advance in technological performances compared to previous conventional actuators. To illustrate their great potential usage, a transparent wiper and a humanoid robot "hand" were elaborately designed and fabricated, which initiate a new direction in the development of high-performance invisible robotics and other intelligent applications with transparency.

UHV-TEM/TED observation of Ag islands grown on Si( 1 1 1 ) 3× 3-Ag surface

NASA Astrophysics Data System (ADS)

Oshima, Yoshifumi; Nakade, Hiroyuki; Shigeki, Sinya; Hirayama, Hiroyuki; Takayanagi, Kunio

2001-11-01

Growths of Ag islands on Si(1 1 1)3×3-Ag surface at room temperature were observed by UHV transmission electron microscopy and diffraction. The Ag islands grown after six monolayer deposition had neither (1 0 0) nor (1 1 0) orientation, but had two complex epitaxial orientations dominantly. One was striped islands which gave rise to a diffraction pattern commensurate with the 3×3 lattice of the Si(1 1 1) surface. The other was the coagulated islands whose diffraction pattern indicated the Ag(1 -3 4) sheet grown parallel to the Si(1 1 1) surface.

Surface Structure of TiO2 Rutile (011) Exposed to Liquid Water

PubMed Central

2017-01-01

The rutile TiO2(011) surface exhibits a (2 × 1) reconstruction when prepared by standard techniques in ultrahigh vacuum (UHV). Here we report that a restructuring occurs upon exposing the surface to liquid water at room temperature. The experiment was performed in a dedicated UHV system, equipped for direct and clean transfer of samples between UHV and liquid environment. After exposure to liquid water, an overlayer with a (2 × 1) symmetry was observed containing two dissociated water molecules per unit cell. The two OH groups yield an apparent “c(2 × 1)” symmetry in scanning tunneling microscopy (STM) images. On the basis of STM analysis and density functional theory (DFT) calculations, this overlayer is attributed to dissociated water on top of the unreconstructed (1 × 1) surface. Investigation of possible adsorption structures and analysis of the domain boundaries in this structure provide strong evidence that the original (2 × 1) reconstruction is lifted. Unlike the (2 × 1) reconstruction, the (1 × 1) surface has an appropriate density and symmetry of adsorption sites. The possibility of contaminant-induced restructuring was excluded based on X-ray photoelectron spectroscopy (XPS) and low-energy He+ ion scattering (LEIS) measurements. PMID:29285204

NC-AFM observation of atomic scale structure of rutile-type TiO2(110) surface prepared by wet chemical process.

PubMed

Namai, Yoshimichi; Matsuoka, Osamu

2006-04-06

We succeeded in observing the atomic scale structure of a rutile-type TiO2(110) single-crystal surface prepared by the wet chemical method of chemical etching in an acid solution and surface annealing in air. Ultrahigh vacuum noncontact atomic force microscopy (UHV-NC-AFM) was used for observing the atomic scale structures of the surface. The UHV-NC-AFM measurements at 450 K, which is above a desorption temperature of molecularly adsorbed water on the TiO2(110) surface, enabled us to observe the atomic scale structure of the TiO2(110) surface prepared by the wet chemical method. In the UHV-NC-AFM measurements at room temperature (RT), however, the atomic scale structure of the TiO2(110) surface was not observed. The TiO2(110) surface may be covered with molecularly adsorbed water after the surface was prepared by the wet chemical method. The structure of the TiO2(110) surface that was prepared by the wet chemical method was consistent with the (1 x 1) bulk-terminated model of the TiO2(110) surface.

An ionization gauge for ultrahigh vacuum measurement based on a carbon nanotube cathode

NASA Astrophysics Data System (ADS)

Zhang, Huzhong; Cheng, Yongjun; Sun, Jian; Wang, Yongjun; Xi, Zhenhua; Dong, Meng; Li, Detian

2017-10-01

This work reports on the complete design and the properties of an ionization gauge based on a carbon nanotube cathode, which can measure ultrahigh vacuum without thermal effects. The gauge is composed of a pressure sensor and an electronic controller. This pressure sensor is constructed based on a hot-cathode ionization gauge, where the traditional hot filament is replaced by an electron source prepared with multi-wall nanotubes. Besides, an electronic controller was developed for bias voltage supply, low current detection, and pressure indication. The gauge was calibrated in the pressure range of 10-8 to 10-4 Pa in a XHV/UHV calibration apparatus. The gauge shows good linear characteristics in different gases. The calibrated sensitivity is 0.035 Pa-1 in N2, and the standard deviation of the sensitivity is about 1.1%. In addition, the stability of the sensitivity was learned in a long period. The standard deviation of the sensitivity factor "S" during one year is 2.0% for Ar and 1.6% for N2.

Evaluation and optimization of quartz resonant-frequency retuned fork force sensors with high Q factors, and the associated electric circuits, for non-contact atomic force microscopy.

PubMed

Ooe, Hiroaki; Fujii, Mikihiro; Tomitori, Masahiko; Arai, Toyoko

2016-02-01

High-Q factor retuned fork (RTF) force sensors made from quartz tuning forks, and the electric circuits for the sensors, were evaluated and optimized to improve the performance of non-contact atomic force microscopy (nc-AFM) performed under ultrahigh vacuum (UHV) conditions. To exploit the high Q factor of the RTF sensor, the oscillation of the RTF sensor was excited at its resonant frequency, using a stray capacitance compensation circuit to cancel the excitation signal leaked through the stray capacitor of the sensor. To improve the signal-to-noise (S/N) ratio in the detected signal, a small capacitor was inserted before the input of an operational (OP) amplifier placed in an UHV chamber, which reduced the output noise from the amplifier. A low-noise, wideband OP amplifier produced a superior S/N ratio, compared with a precision OP amplifier. The thermal vibrational density spectra of the RTF sensors were evaluated using the circuit. The RTF sensor with an effective spring constant value as low as 1000 N/m provided a lower minimum detection limit for force differentiation. A nc-AFM image of a Si(111)-7 × 7 surface was produced with atomic resolution using the RTF sensor in a constant frequency shift mode; tunneling current and energy dissipation images with atomic resolution were also simultaneously produced. The high-Q factor RTF sensor showed potential for the high sensitivity of energy dissipation as small as 1 meV/cycle and the high-resolution analysis of non-conservative force interactions.

Modeling Bloch oscillations in ultra-small Josephson junctions

NASA Astrophysics Data System (ADS)

Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

Design of a digital, ultra-broadband electro-optic switch for reconfigurable optical networks-on-chip.

PubMed

Van Campenhout, Joris; Green, William M J; Vlasov, Yurii A

2009-12-21

We present a novel design for a noise-tolerant, ultra-broadband electro-optic switch, based on a Mach-Zehnder lattice (MZL) interferometer. We analyze the switch performance through rigorous optical simulations, for devices implemented in silicon-on-insulator with carrier-injection-based phase shifters. We show that such a MZL switch can be designed to have a step-like switching response, resulting in improved tolerance to drive-voltage noise and temperature variations as compared to a single-stage Mach-Zehnder switch. Furthermore, we show that degradation in switching crosstalk and insertion loss due to free-carrier absorption can be largely overcome by a MZL switch design. Finally, MZL switches can be designed for having an ultra-wide, temperature-insensitive optical bandwidth of more than 250 nm. The proposed device shows good potential as a broadband optical switch in reconfigurable optical networks-on-chip.

Transparent actuators and robots based on single-layer superaligned carbon nanotube sheet and polymer composites

NASA Astrophysics Data System (ADS)

Chen, Luzhuo; Weng, Mingcen; Zhang, Wei; Zhou, Zhiwei; Zhou, Yi; Xia, Dan; Li, Jiaxin; Huang, Zhigao; Liu, Changhong; Fan, Shoushan

2016-03-01

Transparent actuators have been attracting emerging interest recently, as they demonstrate potential applications in the fields of invisible robots, tactical displays, variable-focus lenses, and flexible cellular phones. However, previous technologies did not simultaneously realize macroscopic transparent actuators with advantages of large-shape deformation, low-voltage-driven actuation and fast fabrication. Here, we develop a fast approach to fabricate a high-performance transparent actuator based on single-layer superaligned carbon nanotube sheet and polymer composites. Various advantages of single-layer nanotube sheets including high transparency, considerable conductivity, and ultra-thin dimensions together with selected polymer materials completely realize all the above required advantages. Also, this is the first time that a single-layer nanotube sheet has been used to fabricate actuators with high transparency, avoiding the structural damage to the single-layer nanotube sheet. The transparent actuator shows a transmittance of 72% at the wavelength of 550 nm and bends remarkably with a curvature of 0.41 cm-1 under a DC voltage for 5 s, demonstrating a significant advance in technological performances compared to previous conventional actuators. To illustrate their great potential usage, a transparent wiper and a humanoid robot ``hand'' were elaborately designed and fabricated, which initiate a new direction in the development of high-performance invisible robotics and other intelligent applications with transparency.Transparent actuators have been attracting emerging interest recently, as they demonstrate potential applications in the fields of invisible robots, tactical displays, variable-focus lenses, and flexible cellular phones. However, previous technologies did not simultaneously realize macroscopic transparent actuators with advantages of large-shape deformation, low-voltage-driven actuation and fast fabrication. Here, we develop a fast approach to fabricate a high-performance transparent actuator based on single-layer superaligned carbon nanotube sheet and polymer composites. Various advantages of single-layer nanotube sheets including high transparency, considerable conductivity, and ultra-thin dimensions together with selected polymer materials completely realize all the above required advantages. Also, this is the first time that a single-layer nanotube sheet has been used to fabricate actuators with high transparency, avoiding the structural damage to the single-layer nanotube sheet. The transparent actuator shows a transmittance of 72% at the wavelength of 550 nm and bends remarkably with a curvature of 0.41 cm-1 under a DC voltage for 5 s, demonstrating a significant advance in technological performances compared to previous conventional actuators. To illustrate their great potential usage, a transparent wiper and a humanoid robot ``hand'' were elaborately designed and fabricated, which initiate a new direction in the development of high-performance invisible robotics and other intelligent applications with transparency. Electronic supplementary information (ESI) available: Video records of the actuation process of the transparent wiper and the grabbing-releasing process of the transparent robot ``hand'', transmittance spectra of the PET and BOPP films, the SEM image showing the thickness of the SACNT sheet, calculation of the curvature, calculation of energy efficiency, experimental results of the control experiment, modeling of the SACNT/PET and PET/BOPP composites and experimental results of the repeatability test. See DOI: 10.1039/c5nr07237a

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics.

PubMed

Hutchins, Daniel O; Acton, Orb; Weidner, Tobias; Cernetic, Nathan; Baio, Joe E; Castner, David G; Ma, Hong; Jen, Alex K-Y

2012-11-15

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlO x (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10 -8 A cm -2 and capacitance density of 0.62 µF cm -2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm 2 V -1 s -1 .

Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics

PubMed Central

Hutchins, Daniel O.; Acton, Orb; Weidner, Tobias; Cernetic, Nathan; Baio, Joe E.; Castner, David G.; Ma, Hong; Jen, Alex K.-Y.

2013-01-01

Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlOx (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10−8 A cm−2 and capacitance density of 0.62 µF cm−2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm2 V−1 s−1. PMID:24288423

A digital output piezoelectric accelerometer using a Pb(Zr, Ti)O3 thin film array electrically connected in series

NASA Astrophysics Data System (ADS)

Kobayashi, T.; Okada, H.; Masuda, T.; Maeda, R.; Itoh, T.

2010-10-01

A digital output piezoelectric accelerometer is proposed to realize an ultra-low power consumption wireless sensor node. The accelerometer has patterned piezoelectric thin films (piezoelectric plates) electrically connected in series accompanied by CMOS switches at the end of some of the piezoelectric plates. The connected piezoelectric plates amplify the output voltage without the use of amplifiers. The CMOS switches turn on when the output voltage of the piezoelectric plates is higher than the CMOS threshold voltage. The piezoelectric accelerometer converts the acceleration into a number of on-state CMOS switches, which can be called the digital output. The proposed digital output piezoelectric accelerometer, using Pb(Zr, Ti)O3 (PZT) thin films as the piezoelectric material, was fabricated through a microelectromechanical system (MEMS) microfabrication process. The output voltage was found to be amplified by the number of connected piezoelectric plates. The DC output voltage obtained by using an AC to DC conversion circuit is proportional to the number of connections. The results show the potential for realizing the proposed digital output piezoelectric accelerometer.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

CO oxidation studies over supported noble metal catalysts and single crystals: A review

NASA Technical Reports Server (NTRS)

Boecker, Dirk; Gonzalez, Richard D.

1987-01-01

The catalytic oxidation of CO over noble metal catalysts is reviewed. Results obtained on supported noble metal catalysts and single crystals both at high pressures and under UHV conditions are compared. The underlying causes which result in surface instabilities and multiple steady-state oscillations are considered, in particular, the occurrence of hot spots. CO islands of reactivity, surface oxide formation and phase transformations under oscillatory conditions are discussed.

Uncovering a facile large-scale synthesis of LiNi1/3Co1/3Mn1/3O2 nanoflowers for high power lithium-ion batteries

NASA Astrophysics Data System (ADS)

Hua, Wei-Bo; Guo, Xiao-Dong; Zheng, Zhuo; Wang, Yan-Jie; Zhong, Ben-He; Fang, Baizeng; Wang, Jia-Zhao; Chou, Shu-Lei; Liu, Heng

2015-02-01

Developing advanced electrode materials that deliver high energy at ultra-fast charge and discharge rates are very crucial to meet an increasing large-scale market demand for high power lithium ion batteries (LIBs). A three-dimensional (3D) nanoflower structure is successfully developed in the large-scale synthesis of LiNi1/3Co1/3Mn1/3O2 material for the first time. The fast co-precipitation is the key technique to prepare the nanoflower structure in our method. After heat treatment, the obtained LiNi1/3Co1/3Mn1/3O2 nanoflowers (NL333) pronouncedly present a pristine flower-like nano-architecture and provide fast pathways for the transport of Li-ions and electrons. As a cathode material in a LIB, the prepared NL333 electrode demonstrates an outstanding high-rate capability. Particularly, in a narrow voltage range of 2.7-4.3 V, the discharge capacity at an ultra-fast charge-discharge rate (20C) is up to 126 mAh g-1, which reaches 78% of that at 0.2C, and is much higher than that (i.e., 44.17%) of the traditional bulk LiNi1/3Co1/3Mn1/3O2.

A surfactant free preparation of ultradispersed surface-clean Pt catalyst with highly stable electrocatalytic performance

NASA Astrophysics Data System (ADS)

Tao, Lu; Zhao, Yueping; Zhao, Yufeng; Huang, Shifei; Yang, Yunxia; Tong, Qi; Gao, Faming

2018-02-01

High efficiency platinum-based catalyst demands the ultrafine size and well dispersion of Pt nanoparticles (NPs), with clean surface and strong interactions between the supports. In this work, we demonstrate a simple strategy for the preparation of ultra-dispersed surface-clean Pt catalyst with high stability, in which the Pt nanoparticles (NPs) with 1.8 ± 0.6 nm in size are anchored tightly on a 3D hierarchical porous graphitized carbon (3D-HPG) through galvanic replacement reaction. The as-obtained catalyst can undergo 2000 voltage cycles with negligible activity decay and no apparent structure and size changes for MOR during the durability test, and its mass activity for ORR only reduce 18.3% after 5000 cycles. The excellent performance is attributed to strong anchoring effect between carbon support and Pt nanoparticles.

Flexible non-volatile memory devices based on organic semiconductors

NASA Astrophysics Data System (ADS)

Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

2015-09-01

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

Graphene-based active slow surface plasmon polaritons

PubMed Central

Lu, Hua; Zeng, Chao; Zhang, Qiming; Liu, Xueming; Hossain, Md Muntasir; Reineck, Philipp; Gu, Min

2015-01-01

Finding new ways to control and slow down the group velocity of light in media remains a major challenge in the field of optics. For the design of plasmonic slow light structures, graphene represents an attractive alternative to metals due to its strong field confinement, comparably low ohmic loss and versatile tunability. Here we propose a novel nanostructure consisting of a monolayer graphene on a silicon based graded grating structure. An external gate voltage is applied to graphene and silicon, which are separated by a spacer layer of silica. Theoretical and numerical results demonstrate that the structure exhibits an ultra-high slowdown factor above 450 for the propagation of surface plasmon polaritons (SPPs) excited in graphene, which also enables the spatially resolved trapping of light. Slowdown and trapping occur in the mid-infrared wavelength region within a bandwidth of ~2.1 μm and on a length scale less than 1/6 of the operating wavelength. The slowdown factor can be precisely tuned simply by adjusting the external gate voltage, offering a dynamic pathway for the release of trapped SPPs at room temperature. The presented results will enable the development of highly tunable optoelectronic devices such as plasmonic switches and buffers. PMID:25676462

Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer

NASA Astrophysics Data System (ADS)

Wang, Hai-Shi; Li, Zhi-you; Li, Ke; Qiao, Ming

2018-01-01

An ultra-low specific on-resistance 700 V lateral double-diffused MOSFET (LDMOS) with a buried super junction (BSJ) layer is proposed. [1-9] Buried P-pillars in the LDMOS can be depleted by neighboring N-pillars, overlying and underlying N-drift regions simultaneously, thus allowing a higher doping concentration. Consequently, the doping concentration of either the N-drift regions or N-pillars, or both, may also be increased therewith to compensate the surplus charges in the P-pillars. Compared with conventional surface super junction (SSJ) LDMOS, in which the super junction layer is implemented at the upper surface of the drift region, and P-pillars can only be depleted by the adjacent N-pillars and the N-drift regions beneath, the proposed novel LDMOS structure may have a lower specific on-resistance (Ron,sp) while maintain the same breakdown voltage (BV). Simulation results indicate that the Ron,sp of the novel structure is only 80.5 mΩ cm2 with a high BV of 750 V, which is reduced by 17% in comparison with the Ron,sp of a conventional SSJ LDMOS.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

Developing Antimatter Containment Technology: Modeling Charged Particle Oscillations in a Penning-Malmberg Trap

NASA Technical Reports Server (NTRS)

Chakrabarti, S.; Martin, J. J.; Pearson, J. B.; Lewis, R. A.

2003-01-01

The NASA MSFC Propulsion Research Center (PRC) is conducting a research activity examining the storage of low energy antiprotons. The High Performance Antiproton Trap (HiPAT) is an electromagnetic system (Penning-Malmberg design) consisting of a 4 Tesla superconductor, a high voltage confinement electrode system, and an ultra high vacuum test section; designed with an ultimate goal of maintaining charged particles with a half-life of 18 days. Currently, this system is being experimentally evaluated using normal matter ions which are cheap to produce and relatively easy to handle and provide a good indication of overall trap behavior, with the exception of assessing annihilation losses. Computational particle-in-cell plasma modeling using the XOOPIC code is supplementing the experiments. Differing electrode voltage configurations are employed to contain charged particles, typically using flat, modified flat and harmonic potential wells. Ion cloud oscillation frequencies are obtained experimentally by amplification of signals induced on the electrodes by the particle motions. XOOPIC simulations show that for given electrode voltage configurations, the calculated charged particle oscillation frequencies are close to experimental measurements. As a two-dimensional axisymmetric code, XOOPIC cannot model azimuthal plasma variations, such as those induced by radio-frequency (RF) modulation of the central quadrupole electrode in experiments designed to enhance ion cloud containment. However, XOOPIC can model analytically varying electric potential boundary conditions and particle velocity initial conditions. Application of these conditions produces ion cloud axial and radial oscillation frequency modes of interest in achieving the goal of optimizing HiPAT for reliable containment of antiprotons.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Promising Results from Three NASA SBIR Solar Array Technology Development Programs

NASA Technical Reports Server (NTRS)

Eskenazi, Mike; White, Steve; Spence, Brian; Douglas, Mark; Glick, Mike; Pavlick, Ariel; Murphy, David; O'Neill, Mark; McDanal, A. J.; Piszczor, Michael

2005-01-01

Results from three NASA SBIR solar array technology programs are presented. The programs discussed are: 1) Thin Film Photovoltaic UltraFlex Solar Array; 2) Low Cost/Mass Electrostatically Clean Solar Array (ESCA); and 3) Stretched Lens Array SquareRigger (SLASR). The purpose of the Thin Film UltraFlex (TFUF) Program is to mature and validate the use of advanced flexible thin film photovoltaics blankets as the electrical subsystem element within an UltraFlex solar array structural system. In this program operational prototype flexible array segments, using United Solar amorphous silicon cells, are being manufactured and tested for the flight qualified UltraFlex structure. In addition, large size (e.g. 10 kW GEO) TFUF wing systems are being designed and analyzed. Thermal cycle and electrical test and analysis results from the TFUF program are presented. The purpose of the second program entitled, Low Cost/Mass Electrostatically Clean Solar Array (ESCA) System, is to develop an Electrostatically Clean Solar Array meeting NASA s design requirements and ready this technology for commercialization and use on the NASA MMS and GED missions. The ESCA designs developed use flight proven materials and processes to create a ESCA system that yields low cost, low mass, high reliability, high power density, and is adaptable to any cell type and coverglass thickness. All program objectives, which included developing specifications, creating ESCA concepts, concept analysis and trade studies, producing detailed designs of the most promising ESCA treatments, manufacturing ESCA demonstration panels, and LEO (2,000 cycles) and GEO (1,350 cycles) thermal cycling testing of the down-selected designs were successfully achieved. The purpose of the third program entitled, "High Power Platform for the Stretched Lens Array," is to develop an extremely lightweight, high efficiency, high power, high voltage, and low stowed volume solar array suitable for very high power (multi-kW to MW) applications. These objectives are achieved by combining two cutting edge technologies, the SquareRigger solar array structure and the Stretched Lens Array (SLA). The SLA SquareRigger solar array is termed SLASR. All program objectives, which included developing specifications, creating preliminary designs for a near-term SLASR, detailed structural, mass, power, and sizing analyses, fabrication and power testing of a functional flight-like SLASR solar blanket, were successfully achieved.

Model Based Optimization of Integrated Low Voltage DC-DC Converter for Energy Harvesting Applications

NASA Astrophysics Data System (ADS)

Jayaweera, H. M. P. C.; Muhtaroğlu, Ali

2016-11-01

A novel model based methodology is presented to determine optimal device parameters for the fully integrated ultra low voltage DC-DC converter for energy harvesting applications. The proposed model feasibly contributes to determine the maximum efficient number of charge pump stages to fulfill the voltage requirement of the energy harvester application. The proposed DC-DC converter based power consumption model enables the analytical derivation of the charge pump efficiency when utilized simultaneously with the known LC tank oscillator behavior under resonant conditions, and voltage step up characteristics of the cross-coupled charge pump topology. The verification of the model has been done using a circuit simulator. The optimized system through the established model achieves more than 40% maximum efficiency yielding 0.45 V output with single stage, 0.75 V output with two stages, and 0.9 V with three stages for 2.5 kΩ, 3.5 kΩ and 5 kΩ loads respectively using 0.2 V input.

Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

NASA Astrophysics Data System (ADS)

Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

2017-04-01

Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

A novel flexible capacitive touch pad based on graphene oxide film.

PubMed

Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

2013-02-07

Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch "ON" to "OFF" voltage ratio up to ∼60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

Ultra-broadband phase-sensitive optical time-domain reflectometry with a temporally sequenced multi-frequency source.

PubMed

Wang, Zhaoyong; Pan, Zhengqing; Fang, Zujie; Ye, Qing; Lu, Bin; Cai, Haiwen; Qu, Ronghui

2015-11-15

A phase-sensitive optical time-domain reflectometry (Φ-OTDR) with a temporally sequenced multi-frequency (TSMF) source is proposed. This technique can improve the system detection bandwidth without the sensing range decreasing. Up to 0.5 MHz detection bandwidth over 9.6 km is experimentally demonstrated as an example. To the best of our knowledge, this is the first time that such a high detection bandwidth over such a long sensing range is reported in Φ-OTDR-based distributed vibration sensing. The technical issues of TSMF Φ-OTDR are discussed in this Letter. This technique will help Φ-OTDR find new important foreground in long-haul distributed broadband-detection applications, such as structural-health monitoring and partial-discharge online monitoring of high voltage power cables.

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dauber, Jan; Stampfer, Christoph; Peter Grünberg Institute

2015-05-11

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50more » nT/√(Hz) making our graphene sensors highly interesting for industrial applications.« less

A novel flexible capacitive touch pad based on graphene oxide film

NASA Astrophysics Data System (ADS)

Tian, He; Yang, Yi; Xie, Dan; Ren, Tian-Ling; Shu, Yi; Zhou, Chang-Jian; Sun, Hui; Liu, Xuan; Zhang, Cang-Hai

2013-01-01

Recently, graphene oxide (GO) supercapacitors with ultra-high energy densities have received significant attention. In addition to energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as vibration and sound energy harvesting. Here, we experimentally create a macroscopic flexible capacitive touch pad based on GO film. An obvious touch ``ON'' to ``OFF'' voltage ratio up to ~60 has been observed. Moreover, we tested the capacitor structure on both flat and curved surfaces and it showed high response sensitivity under fast touch rates. Collectively, our results raise the exciting prospect that the realization of macroscopic flexible keyboards with large-area graphene based materials is technologically feasible, which may open up important applications in control and interface design for solar cells, speakers, supercapacitors, batteries and MEMS systems.

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaumeton, Florian, E-mail: florian.chaumeton@cemes.fr; Gauthier, Sébastien, E-mail: gauthier@cemes.fr; Martrou, David, E-mail: david.martrou@cemes.fr

Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitativemore » determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.« less

Active Learning Approaches by Visualizing ICT Devices with Milliseconds Resolution for Deeper Understanding in Physics

NASA Astrophysics Data System (ADS)

Kobayashi, Akizo; Okiharu, Fumiko

2010-07-01

We are developing various modularized materials in physics education to overcome students' misconceptions by use of ICT, i.e. video analysis software and ultra-high-speed digital movies, motion detector, force sensors, current and voltage probes, temperature sensors etc. Furthermore, we also present some new modules of active learning approaches on electric circuit using high speed camera and voltage probes with milliseconds resolution. We are now especially trying to improve conceptual understanding by use of ICT devices with milliseconds resolution in various areas of physics education We give some modules of mass measurements by video analysis of collision phenomena by using high speed cameras—Casio EX-F1(1200 fps), EX-FH20(1000 fps) and EX-FC100/150(1000 fps). We present several new modules on collision phenomena to establish deeper understanding of conservation laws of momentum. We discuss some effective results of trial on a physics education training courses for science educators, and those for science teachers during the renewal years of teacher's license after every ten years in Japan. Finally, we discuss on some typical results of pre-test and post-test in our active learning approaches based on ICT, i.e. some evidence on improvements of physics education (increasing ratio of correct answer are 50%-level).

High sensitivity pH sensing on the BEOL of industrial FDSOI transistors

NASA Astrophysics Data System (ADS)

Rahhal, Lama; Ayele, Getenet Tesega; Monfray, Stéphane; Cloarec, Jean-Pierre; Fornacciari, Benjamin; Pardoux, Eric; Chevalier, Celine; Ecoffey, Serge; Drouin, Dominique; Morin, Pierre; Garnier, Philippe; Boeuf, Frederic; Souifi, Abdelkader

2017-08-01

In this work we demonstrate the use of Fully Depleted Silicon On Insulator (FDSOI) transistors as pH sensors with a 23 nm silicon nitride sensing layer built in the Back-End-Of-Line (BEOL). The back end process to deposit the sensing layer and fabricate the electrical structures needed for testing is detailed. A series of tests employing different pH buffer solutions has been performed on transistors of different geometries, controlled via the back gate. The main findings show a shift of the drain current (ID) as a function of the back gate voltage (VB) when different pH buffer solutions are probed in the range of pH 6 to pH 8. This shift is observed at VB voltages swept from 0 V to 3 V, demonstrating the sensor operation at low voltage. A high sensitivity of up to 250 mV/pH unit (more than 4-fold larger than Nernstian response) is observed on FDSOI MOS transistors of 0.06 μm gate length and 0.08 μm gate width. She is currently working as a Postdoctoral researcher at Institut des nanotechnologies de Lyon in collaboration with STMicroelectronics and Université de Sherbrook (Canada) working on ;Integration of ultra-low-power gas and pH sensors with advanced technologies;. Her research interest includes selection, machining, optimisation and electrical characterisation of the sensitive layer for a low power consumption gas sensor based on advanced MOS transistors.

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

NASA Astrophysics Data System (ADS)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Ultra-wideband tunable resonator based on varactor-loaded complementary split-ring resonators on a substrate-integrated waveguide for microwave sensor applications.

PubMed

Sam, Somarith; Lim, Sungjoon

2013-04-01

This paper presents the modeling, design, fabrication, and measurement of an ultra-wideband tunable twoport resonator in which the substrate-integrated waveguide, complementary split-ring resonators (CSRRs), and varactors are embedded on the same planar platform. The tuning of the passband frequency is generated by a simple single dc voltage of 0 to 36 V, which is applied to each varactor on the CSRRs. Different capacitance values and resonant frequencies are produced while a nearly constant absolute bandwidth is maintained. The resonant frequency is varied between 0.83 and 1.58 GHz and has a wide tuning ratio of 90%.

Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films.

PubMed

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-29

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO 2 ultra-thin films. The SiO 2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO 2 ∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO 2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO 2 interface.

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Haochun; Ishikawa, Kyohei; Ide, Keisuke

2015-11-28

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10{sup −4} and 10{sup −7 }Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 10{sup 20} and 10{sup 19 }cm{sup −3}, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgapmore » states were affected strongly by the residual hydrogen (possibly H{sub 2}O). The step-wise near-CBM states were observed only in the STD films deposited without O{sub 2} gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O{sub 2} flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H{sub 2}O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O{sub 2}. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O{sub 2} flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H{sub 2}O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm{sup 2}/(V s)« less

Investigation of multi-state charge-storage properties of redox-active organic molecules in silicon-molecular hybrid devices for DRAM and Flash applications

NASA Astrophysics Data System (ADS)

Gowda, Srivardhan Shivappa

Molecular electronics has recently spawned a considerable amount of interest with several molecules possessing charge-conduction and charge-storage properties proposed for use in electronic devices. Hybrid silicon-molecular technology has the promise of augmenting the current silicon technology and provide for a transitional path to future molecule-only technology. The focus of this dissertation work has been on developing a class of hybrid silicon-molecular electronic devices for DRAM and Flash memory applications utilizing redox-active molecules. This work exploits the ability of molecules to store charges with single-electron precision at room temperature. The hybrid devices are fabricated by forming self-assembled monolayers of redox-active molecules on Si and oxide (SiO2 and HfO2) surfaces via formation of covalent linkages. The molecules possess discrete quantum states from which electrons can tunnel to the Si substrate at discrete applied voltages (oxidation process, cell write), leaving behind a positively charged layer of molecules. The reduction (erase) process, which is the process of electrons tunneling back from Si to the molecules, neutralizes the positively charged molecular monolayer. Hybrid silicon-molecular capacitor test structures were electrically characterized with an electrolyte gate using cyclic voltammetry (CyV) and impedance spectroscopy (CV) techniques. The redox voltages, kinetics (write/erase speeds) and charge-retention characteristics were found to be strongly dependent on the Si doping type and densities, and ambient light. It was also determined that the redox energy states in the molecules communicate with the valence band of the Si substrate. This allows tuning of write and read states by modulating minority carriers in n- and p-Si substrates. Ultra-thin dielectric tunnel barriers (SiO2, HfO2) were placed between the molecules and the Si substrate to augment charge-retention for Flash memory applications. The redox response was studied as a function of tunnel oxide thickness, dielectric permittivity and energy barrier, and modified Butler-Volmer expressions were postulated to describe the redox kinetics. The speed vs. retention performance of the devices was improved via asymmetric layered tunnel barriers. The properties of molecules can be tailored by molecular design and synthetic chemistry. In this work, it was demonstrated that an alternate route to tune/enhance the properties of the hybrid device is to engineer the substrate (silicon) component. The molecules were attached to diode surfaces to tune redox voltages and improve charge-retention characteristics. N+ pockets embedded in P-Si well were utilized to obtain multiple states from a two-state molecule. The structure was also employed as a characterization tool in investigating the intrinsic properties of the molecules such as lateral conductivity within the monolayer. Redox molecules were also incorporated on an ultra thin gate-oxide of Si MOSFETs with the intent of studying the interaction of redox states with Si MOSFETs. The discrete molecular states were manifested in the drain current and threshold voltage characteristics of the device. This work demonstrates the multi-state modulation of Si-MOSFETs' drain current via redox-active molecular monolayers. Polymeric films of redox-active molecules were incorporated to improve the charge-density (ON/OFF ratio) and these structures may be employed for multi-state, low-voltage Flash memory applications. The most critical aspect of this research effort is to build a reliable and high density solid state memory technology. To this end, efforts were directed towards replacement of the electrolytic gate, which forms an extremely thin insulating double layer (˜10 nm) at the electrolyte-molecule interface, with a combination of an ultra-thin high-K dielectric layer and a metal gate. Several interesting observations were made in the research approaches towards integration and provided valuable insights into the electrolyte-redox systems. In summary, this work provides fundamental insights into the interaction of redox-energy states with silicon substrate and realistic approaches for exploiting the unique properties of the molecules that may enable solutions for nanoscale high density, low-voltage, long retention and multiple bit memory applications.

Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

NASA Astrophysics Data System (ADS)

Shchagin, A. V.; Shul'ga, N. F.; Trofymenko, S. V.; Nazhmudinov, R. M.; Kubankin, A. S.

2016-11-01

The possibility of measurement of electrons ionization loss in Si layer of smoothly tunable thickness is shown in the proof-of-principle experiment. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high voltage power supply has been used. Ionization loss spectra for electrons emitted by radioactive source 207Bi are presented and discussed. Experimental results for the most probable ionization loss in the Landau spectral peak are compared with theoretical calculations. The possibility of research of evolution of electromagnetic field of ultra-relativistic particles traversing media interface with the use of detectors with smoothly tunable thickness is proposed.

BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology

NASA Astrophysics Data System (ADS)

Galy, Philippe; Athanasiou, S.; Cristoloveanu, S.

2016-01-01

We evaluate the Electro-Static Discharge (ESD) protection capability of BIpolar MOS (BIMOS) transistors integrated in ultrathin silicon film for 28 nm Fully Depleted SOI (FD-SOI) Ultra Thin Body and BOX (UTBB) high-k metal gate technology. Using as a reference our measurements in hybrid bulk-SOI structures, we extend the BIMOS design towards the ultrathin silicon film. Detailed study and pragmatic evaluations are done based on 3D TCAD simulation with standard physical models using Average Current Slope (ACS) method and quasi-static DC stress (Average Voltage Slope AVS method). These preliminary 3D TACD results are very encouraging in terms of ESD protection efficiency in advanced FD-SOI CMOS.

A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel †

PubMed Central

Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

2017-01-01

A submicron pixel’s light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e−/s at 60 °C, an ultra-low read noise of 0.90 e−·rms, a high full well capacity (FWC) of 4100 e−, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed. PMID:29206162

Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe

PubMed Central

Jarvis, Sam; Danza, Rosanna; Moriarty, Philip

2012-01-01

Summary Background: Noncontact atomic force microscopy (NC-AFM) now regularly produces atomic-resolution images on a wide range of surfaces, and has demonstrated the capability for atomic manipulation solely using chemical forces. Nonetheless, the role of the tip apex in both imaging and manipulation remains poorly understood and is an active area of research both experimentally and theoretically. Recent work employing specially functionalised tips has provided additional impetus to elucidating the role of the tip apex in the observed contrast. Results: We present an analysis of the influence of the tip apex during imaging of the Si(100) substrate in ultra-high vacuum (UHV) at 5 K using a qPlus sensor for noncontact atomic force microscopy (NC-AFM). Data demonstrating stable imaging with a range of tip apexes, each with a characteristic imaging signature, have been acquired. By imaging at close to zero applied bias we eliminate the influence of tunnel current on the force between tip and surface, and also the tunnel-current-induced excitation of silicon dimers, which is a key issue in scanning probe studies of Si(100). Conclusion: A wide range of novel imaging mechanisms are demonstrated on the Si(100) surface, which can only be explained by variations in the precise structural configuration at the apex of the tip. Such images provide a valuable resource for theoreticians working on the development of realistic tip structures for NC-AFM simulations. Force spectroscopy measurements show that the tip termination critically affects both the short-range force and dissipated energy. PMID:22428093

Sample mounting and transfer for coupling an ultrahigh vacuum variable temperature beetle scanning tunneling microscope with conventional surface probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nafisi, Kourosh; Ranau, Werner; Hemminger, John C.

2001-01-01

We present a new ultrahigh vacuum (UHV) chamber for surface analysis and microscopy at controlled, variable temperatures. The new instrument allows surface analysis with Auger electron spectroscopy, low energy electron diffraction, quadrupole mass spectrometer, argon ion sputtering gun, and a variable temperature scanning tunneling microscope (VT-STM). In this system, we introduce a novel procedure for transferring a sample off a conventional UHV manipulator and onto a scanning tunneling microscope in the conventional ''beetle'' geometry, without disconnecting the heating or thermocouple wires. The microscope, a modified version of the Besocke beetle microscope, is mounted on a 2.75 in. outer diameter UHVmore » flange and is directly attached to the base of the chamber. The sample is attached to a tripod sample holder that is held by the main manipulator. Under UHV conditions the tripod sample holder can be removed from the main manipulator and placed onto the STM. The VT-STM has the capability of acquiring images between the temperature range of 180--500 K. The performance of the chamber is demonstrated here by producing an ordered array of island vacancy defects on a Pt(111) surface and obtaining STM images of these defects.« less

Note: Fabrication and characterization of molybdenum tips for scanning tunneling microscopy and spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carrozzo, P.; Tumino, F.; Facibeni, A.

We present a method for the preparation of bulk molybdenum tips for Scanning Tunneling Microscopy and Spectroscopy and we assess their potential in performing high resolution imaging and local spectroscopy by measurements on different single crystal surfaces in UHV, namely, Au(111), Si(111)-7 × 7, and titanium oxide 2D ordered nanostructures supported on Au(111). The fabrication method is versatile and can be extended to other metals, e.g., cobalt.

Ultra-high-aspect-orthogonal and tunable three dimensional polymeric nanochannel stack array for BioMEMS applications

NASA Astrophysics Data System (ADS)

Heo, Joonseong; Kwon, Hyukjin J.; Jeon, Hyungkook; Kim, Bumjoo; Kim, Sung Jae; Lim, Geunbae

2014-07-01

Nanofabrication technologies have been a strong advocator for new scientific fundamentals that have never been described by traditional theory, and have played a seed role in ground-breaking nano-engineering applications. In this study, we fabricated ultra-high-aspect (~106 with O(100) nm nanochannel opening and O(100) mm length) orthogonal nanochannel array using only polymeric materials. Vertically aligned nanochannel arrays in parallel can be stacked to form a dense nano-structure. Due to the flexibility and stretchability of the material, one can tune the size and shape of the nanochannel using elongation and even roll the stack array to form a radial-uniformly distributed nanochannel array. The roll can be cut at discretionary lengths for incorporation with a micro/nanofluidic device. As examples, we demonstrated ion concentration polarization with the device for Ohmic-limiting/overlimiting current-voltage characteristics and preconcentrated charged species. The density of the nanochannel array was lower than conventional nanoporous membranes, such as anodic aluminum oxide membranes (AAO). However, accurate controllability over the nanochannel array dimensions enabled multiplexed one microstructure-on-one nanostructure interfacing for valuable biological/biomedical microelectromechanical system (BioMEMS) platforms, such as nano-electroporation.Nanofabrication technologies have been a strong advocator for new scientific fundamentals that have never been described by traditional theory, and have played a seed role in ground-breaking nano-engineering applications. In this study, we fabricated ultra-high-aspect (~106 with O(100) nm nanochannel opening and O(100) mm length) orthogonal nanochannel array using only polymeric materials. Vertically aligned nanochannel arrays in parallel can be stacked to form a dense nano-structure. Due to the flexibility and stretchability of the material, one can tune the size and shape of the nanochannel using elongation and even roll the stack array to form a radial-uniformly distributed nanochannel array. The roll can be cut at discretionary lengths for incorporation with a micro/nanofluidic device. As examples, we demonstrated ion concentration polarization with the device for Ohmic-limiting/overlimiting current-voltage characteristics and preconcentrated charged species. The density of the nanochannel array was lower than conventional nanoporous membranes, such as anodic aluminum oxide membranes (AAO). However, accurate controllability over the nanochannel array dimensions enabled multiplexed one microstructure-on-one nanostructure interfacing for valuable biological/biomedical microelectromechanical system (BioMEMS) platforms, such as nano-electroporation. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00350k

High Efficiency Dye-sensitized Solar Cells Constructed with Composites of TiO2 and the Hot-bubbling Synthesized Ultra-Small SnO2 Nanocrystals.

PubMed

Mao, Xiaoli; Zhou, Ru; Zhang, Shouwei; Ding, Liping; Wan, Lei; Qin, Shengxian; Chen, Zhesheng; Xu, Jinzhang; Miao, Shiding

2016-01-13

An efficient photo-anode for the dye-sensitized solar cells (DSSCs) should have features of high loading of dye molecules, favorable band alignments and good efficiency in electron transport. Herein, the 3.4 nm-sized SnO2 nanocrystals (NCs) of high crystallinity, synthesized via the hot-bubbling method, were incorporated with the commercial TiO2 (P25) particles to fabricate the photo-anodes. The optimal percentage of the doped SnO2 NCs was found at ~7.5% (SnO2/TiO2, w/w), and the fabricated DSSC delivers a power conversion efficiency up to 6.7%, which is 1.52 times of the P25 based DSSCs. The ultra-small SnO2 NCs offer three benefits, (1) the incorporation of SnO2 NCs enlarges surface areas of the photo-anode films, and higher dye-loading amounts were achieved; (2) the high charge mobility provided by SnO2 was confirmed to accelerate the electron transport, and the photo-electron recombination was suppressed by the highly-crystallized NCs; (3) the conduction band minimum (CBM) of the SnO2 NCs was uplifted due to the quantum size effects, and this was found to alleviate the decrement in the open-circuit voltage. This work highlights great contributions of the SnO2 NCs to the improvement of the photovoltaic performances in the DSSCs.

High Efficiency Dye-sensitized Solar Cells Constructed with Composites of TiO2 and the Hot-bubbling Synthesized Ultra-Small SnO2 Nanocrystals

PubMed Central

Mao, Xiaoli; Zhou, Ru; Zhang, Shouwei; Ding, Liping; Wan, Lei; Qin, Shengxian; Chen, Zhesheng; Xu, Jinzhang; Miao, Shiding

2016-01-01

An efficient photo-anode for the dye-sensitized solar cells (DSSCs) should have features of high loading of dye molecules, favorable band alignments and good efficiency in electron transport. Herein, the 3.4 nm-sized SnO2 nanocrystals (NCs) of high crystallinity, synthesized via the hot-bubbling method, were incorporated with the commercial TiO2 (P25) particles to fabricate the photo-anodes. The optimal percentage of the doped SnO2 NCs was found at ~7.5% (SnO2/TiO2, w/w), and the fabricated DSSC delivers a power conversion efficiency up to 6.7%, which is 1.52 times of the P25 based DSSCs. The ultra-small SnO2 NCs offer three benefits, (1) the incorporation of SnO2 NCs enlarges surface areas of the photo-anode films, and higher dye-loading amounts were achieved; (2) the high charge mobility provided by SnO2 was confirmed to accelerate the electron transport, and the photo-electron recombination was suppressed by the highly-crystallized NCs; (3) the conduction band minimum (CBM) of the SnO2 NCs was uplifted due to the quantum size effects, and this was found to alleviate the decrement in the open-circuit voltage. This work highlights great contributions of the SnO2 NCs to the improvement of the photovoltaic performances in the DSSCs. PMID:26758941

Ultra-wide detectable concentration range of GMR biosensors using Fe3O4 microspheres

NASA Astrophysics Data System (ADS)

Xu, Jie; Li, Qiang; Zong, Weihua; Zhang, Yongcheng; Li, Shandong

2016-11-01

Exchange-biased GMR sensors were employed for biodetection using a DC in-plane measuring method and a magnetic label of Fe3O4 microspheres. It was revealed that an ultra-wide concentration span covering five orders from 10 ng/mL to 1000 μg/mL was achieved in a home-made biodetection device. The concentration x dependence of output voltage difference |ΔV| between with and without magnetic labels, exhibits nonlinear futures, which undergoes two functions depending on the concentration region. For the low concentration region from 10 ng/mL to 10 μg/mL, a logarithmic relation of |ΔV|=26.3lgx+91.4 fits well, while for the high concentration region, a negative exponential function of |ΔV|=3113(1-e-x/250) describes the |ΔV|~x relation better. For the former, the "coffee ring" effect, formed during the solvent evaporation, was considered as the main reason for the nonlinear relation. While for the latter with high concentration, the overlap among the particles and the enhanced interaction of the magnetic dipole were responsible for the nonlinear |ΔV|~x relationship. Moreover, the calculated detectable concentration limit is agreed well with the experimental data.