NASA Astrophysics Data System (ADS)
Zhang, X.; Connelly, D.; Takeuchi, H.; Hytha, M.; Mears, R. J.; Rubin, L. M.; Liu, T.-J. K.
2018-03-01
The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Torregrosa, Frank; Etienne, Hasnaa; Mathieu, Gilles
Classical beam line implantation is limited in low energies and cannot achieve P+/N junctions requirements for <45nm node. Compared to conventional beam line ion implantation, limited to a minimum of about 200 eV, the efficiency of Plasma Immersion Ion Implantation (PIII) is no more to prove for the realization of Ultra Shallow Junctions (USJ) in semiconductor applications: this technique allows to get ultimate shallow profiles (as implanted) thanks to no lower limitation of energy and offers high dose rate. In the field of the European consortium NANOCMOS, Ultra Shallow Junctions implanted on a semi-industrial PIII prototype (PULSION registered ) designedmore » by the French company IBS, have been studied. Ultra shallow junctions implanted with BF3 at acceleration voltages down to 20V were realized. Contamination level, homogeneity and depth profile are studied. The SIMS profiles obtained show the capability to make ultra shallow profiles (as implanted) down to 2nm.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume
In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealingmore » is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.« less
NASA Astrophysics Data System (ADS)
Chang, Feng-Ming; Wu, Zong-Zhe; Lin, Yen-Fu; Kao, Li-Chi; Wu, Cheng-Ta; JangJian, Shiu-Ko; Chen, Yuan-Nian; Lo, Kuang Yao
2018-03-01
The condition of the beam current in the implantation process is a key issue in the damage rate and structural evolution in the sequent annealing process, especially for ultra-shallow layers. In this work, we develop a compensative optical method combined with UV Raman, X-ray photoelectron spectroscopy (XPS), and X-ray absorption near edge spectroscopy (XANES) to inspect the influence of the beam current in the implantation process. The optima condition of the beam current in the implantation process is determined by higher effective Si-B bond portion in UV Raman spectra and less the peak of B-B bond in XPS spectra which is caused by B cluster defects. Results of XANES indicate that the B oxide layer is formed on the surface of the ultra-shallow junction. The defects in the ultra-shallow junction after annealing are analyzed by novel optical analyses, which cannot be inspected by a traditional thermal wave and resistance measurement. This work exhibits the structural variation of the ultra-shallow junction via a variant beam current and provides a valuable metrology in examining the chemical states and the effective activation in the implantation technology.
Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces
NASA Astrophysics Data System (ADS)
Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong
2004-10-01
Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.
Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok
2011-07-01
In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.
NASA Astrophysics Data System (ADS)
Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.
2011-01-01
Ultra shallow junctions are becoming widely used in the micro- and nanoelectronic devices, and novel measurement methods are needed to monitor the manufacturing processes. Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are non-contact, nondestructive techniques suitable for characterizing both the implantation and the annealing process. Tests verify that these methods are consistent with each other and by using them together, defects originating in the implantation and anneal steps can be separated.
NASA Astrophysics Data System (ADS)
Lu, Xin-Ming
Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation in combination with two-step annealing is effective in fabricating ultra-shallow junctions.
Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions
NASA Astrophysics Data System (ADS)
Nandan, S. R.; Agarwal, Vikas; Banerjee, Sanjay K.
1997-08-01
We have examined low energy BCl2 and BBr2 implants as a means of fabricating ultra-shallow P+-N junctions. Five keV and 9 keV BCl2 implants and 18 keV BBr2 implants have been compared to 5 keV BF2 implants to study the benefits of using these species. BCl2 and BBr2, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 1017 cm-3 background doping) for 5 keV BCl2 implants as compared to 5 keV BF2 implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr2 implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl2 implanted junctions have leakage current densities of approximately 1 (mu) A/cm2 as compared to 10 nA/cm2 for the BF2 implants. BBr2 implants have a lower leakage density of approximately 50 nA/cm2. Low energy BBr2 implants offer an exciting alternative for fabricating low leakage, ultra-shallow P+-N junctions.
Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com; Lavoie, Christian; Jordan-Sweet, Jean
We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
Monitoring Ion Implantation Energy Using Non-contact Characterization Methods
NASA Astrophysics Data System (ADS)
Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.
2011-01-01
State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.
NASA Astrophysics Data System (ADS)
Tsai, Ming Han; Wu, Chi-Ting; Lee, Wen-His
2014-04-01
In this study, high-current and low-energy (400 eV) ion implantation and low-temperature microwave annealing were employed to achieve ultra shallow junctions. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (2400 W; ˜500 °C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a 600 W (˜250 °C) microwave was used to achieve low sheet resistance. The device subjected to two-step microwave annealing at 2400 W for 300 s + 600 W for 600 s has the lowest Vth. It also has the lowest subthreshold swing (SS), which means that it has the highest cap ability to control sub threshold current. In these three devices, the largest Ion/Ioff ratio is 2.203 × 106, and the smallest Ion/Ioff ratio is 2.024 × 106.
NASA Astrophysics Data System (ADS)
Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang
2013-12-01
A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.
NASA Technical Reports Server (NTRS)
Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.
1993-01-01
Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.
Xia, Zhenyang; Zang, Kai; Liu, Dong; ...
2017-08-21
Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xia, Zhenyang; Zang, Kai; Liu, Dong
Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Abo, Satoshi; Tanaka, Yuji; Nishikawa, Kazuhisa
2008-11-03
Local resistance profiles of ultra-shallow arsenic implanted into silicon with an energy of 3.5 keV and a dose of 1.2x10{sup 15} ions/cm{sup 2} activated by conventional spike lamp and laser annealing were measured by SSRM in a nitrogen atmosphere with a depth resolution of less than 10 nm for investigating the combination of the conventional spike lamp and laser annealing. Spike lamp annealing at 1050 deg. C followed by laser annealing at a power density of 0.42 kW/mm{sup 2} was found to give the lowest sheet resistance. The resistance profiles obtained by SSRM also indicated the lowest resistance for themore » sample after spike lamp annealing at 1050 deg. C followed by laser annealing with a power density of 0.42 kW/mm{sup 2}. Laser annealing alone with a power density of 0.42 kW/mm{sup 2} resulted in the higher sheet resistance, though the shallower resistance profile could be obtained. Spike lamp annealing followed by laser annealing procedures are effective in activating shallow arsenic profiles.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp
2015-09-28
We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.
Excimer laser annealing: A gold process for CZ silicon junction formation
NASA Technical Reports Server (NTRS)
Wong, David C.; Bottenberg, William R.; Byron, Stanley; Alexander, Paul
1987-01-01
A cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.
Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes
NASA Astrophysics Data System (ADS)
Chen, Changping; Wang, Han; Jiang, Zhenyu; Jin, Xiangliang; Luo, Jun
2014-12-01
Two silicon-based ultraviolet (UV) and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor (CMOS) process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.
Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping
2018-01-09
It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.
Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li
2016-04-27
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.
Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li
2016-01-01
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature. PMID:28773440
DOE Office of Scientific and Technical Information (OSTI.GOV)
Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya
2011-01-07
Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at themore » low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.« less
Low resistance contacts for shallow junction semiconductors
NASA Technical Reports Server (NTRS)
Fatemi, Navid S. (Inventor); Weizer, Victor G. (Inventor)
1994-01-01
A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic contacts that contain small amounts of gallium or indium and by depositing a thin gold phosphide interlayer between the surface of the InP device and the ohmic contact. When both the thin interlayer and the gold-gallium or gold-indium contact metallizations are used, ultra low specific contact resistivities are achieved. Thermal stability with good contact resistivity is achieved by depositing a layer of refractory metal over the gold phosphide interlayer.
Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yates, B. R.; Darby, B. L.; Jones, K. S.
2012-12-15
The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Signmore » 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.« less
Secondary Ion Mass Spectrometry SIMS XI
NASA Astrophysics Data System (ADS)
Gillen, G.; Lareau, R.; Bennett, J.; Stevie, F.
2003-05-01
This volume contains 252 contributions presented as plenary, invited and contributed poster and oral presentations at the 11th International Conference on Secondary Ion Mass Spectrometry (SIMS XI) held at the Hilton Hotel, Walt Disney World Village, Orlando, Florida, 7 12 September, 1997. The book covers a diverse range of research, reflecting the rapid growth in advanced semiconductor characterization, ultra shallow depth profiling, TOF-SIMS and the new areas in which SIMS techniques are being used, for example in biological sciences and organic surface characterization. Papers are presented under the following categories: Isotopic SIMS Biological SIMS Semiconductor Characterization Techniques and Applications Ultra Shallow Depth Profiling Depth Profiling Fundamental/Modelling and Diffusion Sputter-Induced Topography Fundamentals of Molecular Desorption Organic Materials Practical TOF-SIMS Polyatomic Primary Ions Materials/Surface Analysis Postionization Instrumentation Geological SIMS Imaging Fundamentals of Sputtering Ion Formation and Cluster Formation Quantitative Analysis Environmental/Particle Characterization Related Techniques These proceedings provide an invaluable source of reference for both newcomers to the field and experienced SIMS users.
Studies of silicon PN junction solar cells
NASA Technical Reports Server (NTRS)
Lindholm, F. A.
1975-01-01
Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.
Modeling Bloch oscillations in ultra-small Josephson junctions
NASA Astrophysics Data System (ADS)
Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose
In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.
Method for shallow junction formation
Weiner, K.H.
1996-10-29
A doping sequence is disclosed that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated. 8 figs.
Method for shallow junction formation
Weiner, Kurt H.
1996-01-01
A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.
Developments toward an 18% efficient silicon solar cell
NASA Technical Reports Server (NTRS)
Meulenberg, A., Jr.
1983-01-01
Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...
2016-09-19
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and lowmore » voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.« less
Overview of processing activities aimed at higher efficiencies and economical production
NASA Technical Reports Server (NTRS)
Bickler, D. B.
1985-01-01
An overview of processing activities aimed at higher efficiencies and economical production were presented. Present focus is on low-cost process technology for higher-efficiency cells of up to 18% or higher. Process development concerns center on the use of less than optimum silicon sheet, the control of production yields, and making uniformly efficient large-area cells. High-efficiency cell factors that require process development are bulk material perfection, very shallow junction formation, front-surface passivation, and finely detailed metallization. Better bulk properties of the silicon sheet and the keeping of those qualities throughout large areas during cell processing are required so that minority carrier lifetimes are maintained and cell performance is not degraded by high doping levels. When very shallow junctions are formed, the process must be sensitive to metallizatin punch-through, series resisitance in the cell, and control of dopant leaching during surface passivation. There is a need to determine the sensitivity to processing by mathematical modeling and experimental activities.
Recoil implantation of boron into silicon by high energy silicon ions
NASA Astrophysics Data System (ADS)
Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan
2001-07-01
A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.
Excimer laser annealing for low-voltage power MOSFET
NASA Astrophysics Data System (ADS)
Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim
2016-08-01
Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.
New processes and materials for ultraviolet detection with solid state devices
NASA Technical Reports Server (NTRS)
Chopra, D.
1977-01-01
The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.
Laser annealing of ion implanted CZ silicon for solar cell junction formation
NASA Technical Reports Server (NTRS)
Katzeff, J. S.
1981-01-01
The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.
Schott, Björn H; Wüstenberg, Torsten; Wimber, Maria; Fenker, Daniela B; Zierhut, Kathrin C; Seidenbecher, Constanze I; Heinze, Hans-Jochen; Walter, Henrik; Düzel, Emrah; Richardson-Klavehn, Alan
2013-02-01
New episodic memory traces represent a record of the ongoing neocortical processing engaged during memory formation (encoding). Thus, during encoding, deep (semantic) processing typically establishes more distinctive and retrievable memory traces than does shallow (perceptual) processing, as assessed by later episodic memory tests. By contrast, the hippocampus appears to play a processing-independent role in encoding, because hippocampal lesions impair encoding regardless of level of processing. Here, we clarified the neural relationship between processing and encoding by examining hippocampal-cortical connectivity during deep and shallow encoding. Participants studied words during functional magnetic resonance imaging and freely recalled these words after distraction. Deep study processing led to better recall than shallow study processing. For both levels of processing, successful encoding elicited activations of bilateral hippocampus and left prefrontal cortex, and increased functional connectivity between left hippocampus and bilateral medial prefrontal, cingulate and extrastriate cortices. Successful encoding during deep processing was additionally associated with increased functional connectivity between left hippocampus and bilateral ventrolateral prefrontal cortex and right temporoparietal junction. In the shallow encoding condition, on the other hand, pronounced functional connectivity increases were observed between the right hippocampus and the frontoparietal attention network activated during shallow study processing. Our results further specify how the hippocampus coordinates recording of ongoing neocortical activity into long-term memory, and begin to provide a neural explanation for the typical advantage of deep over shallow study processing for later episodic memory. Copyright © 2011 Wiley Periodicals, Inc.
Recovery of shallow junction GaAs solar cells damaged by electron irradiation
NASA Technical Reports Server (NTRS)
Walker, G. H.; Conway, E. J.
1978-01-01
Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.
Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications
Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, SangHyeon; Choi, Won Jun
2016-01-01
Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates. PMID:26864968
Molecular electronics--resonant transport through single molecules.
Lörtscher, Emanuel; Riel, Heike
2010-01-01
The mechanically controllable break-junction technique (MCBJ) enables us to investigate charge transport through an individually contacted and addressed molecule in ultra-high vacuum (UHV) environment at variable temperature ranging from room temperature down to 4 K. Using a statistical measurement and analysis approach, we acquire current-voltage (I-V) characteristics during the repeated formation, manipulation, and breaking of a molecular junction. At low temperatures, voltages accessing the first molecular orbitals in resonance can be applied, providing spectroscopic information about the junction's energy landscape, in particular about the molecular level alignment in respect to the Fermi energy of the electrodes. Thereby, we can investigate the non-linear transport properties of various types of functional molecules and explore their potential use as functional building blocks for future nano-electronics. An example will be given by the reversible and controllable switching between two distinct conductive states of a single molecule. As a proof-of-principle for functional molecular devices, a single-molecule memory element will be demonstrated.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lin, Guangyang; Li, Cheng, E-mail: lich@xmu.edu.cn; Chen, Chaowen
2016-05-09
Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Gemore » metal-oxide-semiconductor field effect transistors.« less
NASA Technical Reports Server (NTRS)
Weizer, V. G.; Fatemi, N. S.; Hoffman, R. W.
1995-01-01
Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.
Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
NASA Astrophysics Data System (ADS)
Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo
2018-05-01
An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.
Geodynamic environments of ultra-slow spreading
NASA Astrophysics Data System (ADS)
Kokhan, Andrey; Dubinin, Evgeny
2015-04-01
Ultra-slow spreading is clearly distinguished as an outstanding type of crustal accretion by recent studies. Spreading ridges with ultra-slow velocities of extension are studied rather well. But ultra-slow spreading is characteristic feature of not only spreading ridges, it can be observed also on convergent and transform plate boundaries. Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on divergent plate boundaries: 1. On spreading ridges with ultra-slow spreading, both modern (f.e. Gakkel, South-West Indian, Aden spreading center) and ceased (Labrador spreading center, Aegir ridge); 2. During transition from continental rifting to early stages of oceanic spreading (all spreading ridges during incipient stages of their formation); 3. During incipient stages of formation of spreading ridges on oceanic crust as a result of ridge jumps and reorganization of plate boundaries (f.e. Mathematicians rise and East Pacific rise); 4. During propagation of spreading ridge into the continental crust under influence of hotspot (Aden spreading center and Afar triple junction), under presence of strike-slip faults preceding propagation (possibly, rift zone of California Bay). Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on transform plate boundaries: 1. In transit zones between two "typical" spreading ridges (f.e. Knipovich ridge); 2. In semi strike-slip/extension zones on the oceanic crust (f.e. American-Antarctic ridge); 3. In the zones of local extension in regional strike-slip areas in pull-apart basins along transform boundaries (Cayman trough, pull-apart basins of the southern border of Scotia plate). Ultra-slow spreading is observed now or could have been observed in the past in the following geodynamic environments on convergent plate boundaries: 1. During back-arc rifting on the stage of transition into back-arc spreading (central part of Bransfield rift); 2. During back-arc inter-subduction spreading (Ayu trough, northern Fiji basin), 3. During diffuse back-arc spreading (area on the south-eastern border of Scotia sea), 4. During back-arc spreading under splitting of island arc (northern extremity of Mariana trough). Each of the geodynamic environments is characterized by peculiar topographic, geological and geophysical features forming under the same spreading velocities. Development of ultra-slow spreading in each of these environments results in formation of peculiar extension sedimentary basins.
Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices
NASA Technical Reports Server (NTRS)
Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.
2004-01-01
Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.
ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.
Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon
2013-01-01
We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.
Nanoscale doping of compound semiconductors by solid phase dopant diffusion
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ahn, Jaehyun, E-mail: jaehyun.ahn@utexas.edu; Koh, Donghyi; Roy, Anupam
2016-03-21
Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration ofmore » 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.« less
Reappraisal of the Arabia-India-Somalia triple junction kinematics
NASA Astrophysics Data System (ADS)
Fournier, Marc; Patriat, Philippe; Leroy, Sylvie
2001-07-01
We propose alternative kinematics for the Arabia-India-Somalia triple junction based on a re-interpretation of seismological and magnetic data. The new triple junction of the ridge-ridge-ridge type is located at the bend of the Sheba Ridge in the eastern gulf of Aden at 14.5°N and 56.4°E. The Owen fracture zone (Arabia-India boundary) is connected to the Sheba Ridge by an ultra-slow divergent boundary trending N80°E±10° marked by diffuse seismicity. The location of the Arabia-India rotation pole is constrained at 14.1°N and 71.2°E by fitting the active part of the Owen fracture zone with a small circle. The finite kinematics of the triple junction is inferred from the present-day kinematics. Since the inception of the accretion 15-18 Ma ago, the Sheba Ridge has probably receded ∼300 km at the expense of the Carlsberg Ridge which propagated northwestward in the gulf of Aden, while an ultra-slow divergent plate boundary developed between the Arabian and Indian plates. The overall geometry of the new triple junction is very similar to that of the Azores triple junction.
Development of high efficiency (14 percent) solar cell array module
NASA Technical Reports Server (NTRS)
Iles, P. A.; Khemthong, S.; Olah, S.; Sampson, W. J.; Ling, K. S.
1980-01-01
Most effort was concentrated on development of procedures to provide large area (3 in. diameter) high efficiency (16.5 percent AM1, 28 C) P+NN+ solar cells. Intensive tests with 3 in. slices gave consistently lower efficiency (13.5 percent). The problems were identified as incomplete formation of and optimum back surface field (BSF), and interaction of the BSF process and the shallow P+ junction. The problem was shown not to be caused by reduced quality of silicon near the edges of the larger slices.
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
NASA Astrophysics Data System (ADS)
Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, J. C.
2017-02-01
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.
An induced junction photovoltaic cell
NASA Technical Reports Server (NTRS)
Call, R. L.
1974-01-01
Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Grezes, C.; Alzate, J. G.; Cai, X.
2016-01-04
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less
Low energy implantation of boron with decaborane ions
NASA Astrophysics Data System (ADS)
Albano, Maria Angela
The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)
NASA Astrophysics Data System (ADS)
Cooper, Dee Ann; Cooper, Roger W.; Stevens, James B.; Stevens, M. S.; Cobban, William A.; Walaszczyk, Ireneusz
2017-12-01
The upper lower Cenomanian through middle Santonian (Upper Cretaceous) of the Boquillas Formation in the Big Bend Region of Trans-Pecos Texas consists of a marine carbonate succession deposited at the southern end of the Western Interior Seaway. The Boquillas Formation, subdivided into the lower, c. 78 m thick limestone-shale Ernst Member, and the upper, c. 132 m thick limestone/chalk/marl San Vicente Member, was deposited in a shallow shelf open marine environment at the junction between the Western Interior Seaway and the western margins of the Tethys Basin. Biogeographically, the area was closely tied with the southern Western Interior Seaway. The richly fossiliferous upper Turonian, Coniacian and lower Santonian parts of the Boquillas Formation are particularly promising for multistratigraphic studies.
Studies of silicon p-n junction solar cells. [open circuit photovoltage
NASA Technical Reports Server (NTRS)
Lindholm, F. A.
1976-01-01
Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.
Naturally formed graded junction for organic light-emitting diodes
NASA Astrophysics Data System (ADS)
Shao, Yan; Yang, Yang
2003-09-01
In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.
NASA Astrophysics Data System (ADS)
Wheeler, Coral Rose
2016-06-01
The high dark matter content and the shallow potential wells of low mass galaxies (10^3 Msun < Mstar < 10^9.5 Msun) make them excellent testbeds for differing theories of galaxy formation. Additionally, the recent up-tick in the number and detail of Local Group dwarf galaxy observations provides a rich dataset for comparison to simulations that attempt to answer important questions in near field cosmology: why are there so few observed dwarfs compared to the number predicted by simulations? What shuts down star formation in ultra-faint galaxies? Why do dwarfs have inverted age gradients and what does it take to convert a dwarf irregular (dIrrs) into a dwarf spheroidal (dSph) galaxy?We to attempt to answer these questions by running ultra-high resolution cosmological FIRE simulations of isolated dwarf galaxies. We predict that many ultra-faint dwarfs should exist as satellites of more massive isolated Local Group dwarfs. The ultra-faints (Mstar < 10^4 Msun) formed in these simulations have uniformly ancient stellar populations (> 10 Gyr), having had their star formation shut down by reionization. Additionally, we show that the kinematics and ellipticities of isolated simulated dwarf centrals are consistent with observed dSphs satellites without the need for harassment from a massive host. We further show that most (but not all) observed *isolated* dIrrs in the Local Volume also have dispersion-supported stellar populations, contradicting the previous view that these objects are rotating. Finally, we investigate the stellar age gradients in dwarfs — showing that early mergers and strong feedback can create an inverted gradient, with the older stars occupying larger galactocentric radii.These results offer an interesting direction in testing models that attempt to solve dark matter problems via explosive feedback episodes. Can the same models that create large cores in simulated dwarfs preserve the mild stellar rotation that is seen in a minority of isolated dIrrs? Can the bursty star formation that created a dark matter core also match observed stellar gradients in low mass galaxies? Comparisons between our simulations and observed dwarfs should provide an important benchmark for this question going forward.
Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.
Alphazan, Thibault; Díaz Álvarez, Adrian; Martin, François; Grampeix, Helen; Enyedi, Virginie; Martinez, Eugénie; Rochat, Névine; Veillerot, Marc; Dewitte, Marc; Nys, Jean-Philippe; Berthe, Maxime; Stiévenard, Didier; Thieuleux, Chloé; Grandidier, Bruno
2017-06-14
Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO 2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10 20 cm -3 . Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.
Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells
NASA Technical Reports Server (NTRS)
Wilson, J. W.; Stock, L. V.
1984-01-01
It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.
Ultra-low specific on-resistance 700V LDMOS with a buried super junction layer
NASA Astrophysics Data System (ADS)
Wang, Hai-Shi; Li, Zhi-you; Li, Ke; Qiao, Ming
2018-01-01
An ultra-low specific on-resistance 700 V lateral double-diffused MOSFET (LDMOS) with a buried super junction (BSJ) layer is proposed. [1-9] Buried P-pillars in the LDMOS can be depleted by neighboring N-pillars, overlying and underlying N-drift regions simultaneously, thus allowing a higher doping concentration. Consequently, the doping concentration of either the N-drift regions or N-pillars, or both, may also be increased therewith to compensate the surplus charges in the P-pillars. Compared with conventional surface super junction (SSJ) LDMOS, in which the super junction layer is implemented at the upper surface of the drift region, and P-pillars can only be depleted by the adjacent N-pillars and the N-drift regions beneath, the proposed novel LDMOS structure may have a lower specific on-resistance (Ron,sp) while maintain the same breakdown voltage (BV). Simulation results indicate that the Ron,sp of the novel structure is only 80.5 mΩ cm2 with a high BV of 750 V, which is reduced by 17% in comparison with the Ron,sp of a conventional SSJ LDMOS.
Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G
2012-12-14
The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.
Yadav, Rana Pratap; Kumar, Sunil; Kulkarni, S V
2014-04-01
Design and development of a high power ultra-wideband, 3 dB tandem hybrid coupler is presented and its application in ICRF heating of the tokamak is discussed. In order to achieve the desired frequency band of 38-112 MHz and 200 kW power handling capability, the 3 dB hybrid coupler is developed using two 3-element 8.34 ± 0.2 dB coupled lines sections in tandem. In multi-element coupled lines, junctions are employed for the joining of coupled elements that produce the undesirable reactance called junction discontinuity effect. The effect becomes prominent in the high power multi-element coupled lines for high frequency (HF) and very high frequency(VHF) applications because of larger structural dimensions. Junction discontinuity effect significantly deteriorates coupling and output performance from the theoretical predictions. For the analysis of junction discontinuity effect and its compensation, a theoretical approach has been developed and generalized for n-element coupled lines section. The theory has been applied in the development of the 3 dB hybrid coupler. The fabricated hybrid coupler has been experimentally characterized using vector network analyzer and obtained results are found in good agreement with developed theory.
NASA Astrophysics Data System (ADS)
Shin, Sunhae; Rok Kim, Kyung
2015-06-01
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.
Joint Services Electronics Program.
1983-08-01
cause excessive outdiffusion from the highlydoped SIPOS layer into the monocrystalline region. A comparison of SIPOS contacted devices annealed for...outdiffusion from the SIPOS into the underlying monocrystalline silicon to form the emitter base junction. This junction should be as shallow as possible to...minimize the bulk recombination in the monocrystalline region yet should present enough of a barrier to reduce the minority carrier population at the
In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.
Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus
2014-02-01
Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.
Micromachined nanocalorimetric sensor for ultra-low-volume cell-based assays.
Johannessen, Erik A; Weaver, John M R; Bourova, Lenka; Svoboda, Petr; Cobbold, Peter H; Cooper, Jonathan M
2002-05-01
Current strategies for cell-based screening generally focus on the development of highly specific assays, which require an understanding of the nature of the signaling molecules and cellular pathways involved. In contrast, changes in temperature of cells provides a measure of altered cellular metabolism that is not stimulus specific and hence could have widespread applications in cell-based screening of receptor agonists and antagonists, as well as in the assessment of toxicity of new lead compounds. Consequently, we have developed a micromachined nanocalorimetric biological sensor using a small number of isolated living cells integrated within a subnanoliter format, which is capable of detecting 13 nW of generated power from the cells, upon exposure to a chemical or pharmaceutical stimulus. The sensor comprises a 10-junction gold and nickel thermopile, integrated on a silicon chip which was back-etched to span a 800-nm-thick membrane of silicon nitride. The thin-film membrane, which supported the sensing junctions of the thermoelectric transducer, gave the system a temperature resolution of 0.125 mK, a low heat capacity of 1.2 nJ mK(-1), and a rapid (unfiltered) response time of 12 ms. The application of the system in ultra-low-volume cell-based assays could provide a rapid endogenous screen. It offers important additional advantages over existing methods in that it is generic in nature, it does not require the use of recombinant cell lines or of detailed assay development, and finally, it can enable the use of primary cell lines or tissue biopsies.
Molecular mechanisms regulating formation, trafficking and processing of annular gap junctions.
Falk, Matthias M; Bell, Cheryl L; Kells Andrews, Rachael M; Murray, Sandra A
2016-05-24
Internalization of gap junction plaques results in the formation of annular gap junction vesicles. The factors that regulate the coordinated internalization of the gap junction plaques to form annular gap junction vesicles, and the subsequent events involved in annular gap junction processing have only relatively recently been investigated in detail. However it is becoming clear that while annular gap junction vesicles have been demonstrated to be degraded by autophagosomal and endo-lysosomal pathways, they undergo a number of additional processing events. Here, we characterize the morphology of the annular gap junction vesicle and review the current knowledge of the processes involved in their formation, fission, fusion, and degradation. In addition, we address the possibility for connexin protein recycling back to the plasma membrane to contribute to gap junction formation and intercellular communication. Information on gap junction plaque removal from the plasma membrane and the subsequent processing of annular gap junction vesicles is critical to our understanding of cell-cell communication as it relates to events regulating development, cell homeostasis, unstable proliferation of cancer cells, wound healing, changes in the ischemic heart, and many other physiological and pathological cellular phenomena.
Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy
NASA Astrophysics Data System (ADS)
Baranov, Artem I.; Gudovskikh, Alexander S.; Kudryashov, Dmitry A.; Lazarenko, Alexandra A.; Morozov, Ivan A.; Mozharov, Alexey M.; Nikitina, Ekaterina V.; Pirogov, Evgeny V.; Sobolev, Maxim S.; Zelentsov, Kirill S.; Egorov, Anton Yu.; Darga, Arouna; Le Gall, Sylvain; Kleider, Jean-Paul
2018-04-01
The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys (SDAs) by molecular beam epitaxy for photovoltaic application were studied by space charge capacitance spectroscopy. Alloys of i-InGaAsN (Eg = 1.03 eV) were lattice-matched grown on GaAs wafers as a superlattice of InAs/GaAsN with one monolayer of InAs (<0.5 nm) between wide GaAsN (7-12 nm) layers as active layers in single-junction solar cells. Low p-type background doping was demonstrated at room temperature in samples with InGaAsN layers 900 nm and 1200 nm thick (less 1 × 1015 cm-3). According to admittance spectroscopy and deep-level transient spectroscopy measurements, the SDA approach leads to defect-free growth up to a thickness of 900 nm. An increase in thickness to 1200 nm leads to the formation of non-radiative recombination centers with an activation energy of 0.5 eV (NT = 8.4 × 1014 cm-3) and a shallow defect level at 0.20 eV. The last one leads to the appearance of additional doping, but its concentration is low (NT = 5 × 1014 cm-3) so it does not affect the photoelectric properties. However, further increase in thickness to 1600 nm, leads to significant growth of its concentration to (3-5) × 1015 cm-3, while the concentration of deep levels becomes 1.3 × 1015 cm-3. Therefore, additional free charge carriers appearing due to ionization of the shallow level change the band diagram from p-i-n to p-n junction at room temperature. It leads to a drop of the external quantum efficiency due to the effect of pulling electric field decrease in the p-n junction and an increased number of non-radiative recombination centers that negatively impact lifetimes in InGaAsN.
Influence of design variables on radiation hardness of silicon MINP solar cells
NASA Technical Reports Server (NTRS)
Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.
1985-01-01
Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.
GaAs nanowire array solar cells with axial p-i-n junctions.
Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu
2014-06-11
Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.
Single-Molecule Electronics: Chemical and Analytical Perspectives.
Nichols, Richard J; Higgins, Simon J
2015-01-01
It is now possible to measure the electrical properties of single molecules using a variety of techniques including scanning probe microcopies and mechanically controlled break junctions. Such measurements can be made across a wide range of environments including ambient conditions, organic liquids, ionic liquids, aqueous solutions, electrolytes, and ultra high vacuum. This has given new insights into charge transport across molecule electrical junctions, and these experimental methods have been complemented with increasingly sophisticated theory. This article reviews progress in single-molecule electronics from a chemical perspective and discusses topics such as the molecule-surface coupling in electrical junctions, chemical control, and supramolecular interactions in junctions and gating charge transport. The article concludes with an outlook regarding chemical analysis based on single-molecule conductance.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hsu, William, E-mail: william.hsu@utexas.edu; Kim, Taegon; Chou, Harry
2016-07-07
Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B{sup +} implantation, the use of the heavier BF{sub 2}{sup +} ions or even BF{sup +} is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B{sup +}, BF{sup +}, and BF{sub 2}{sup +} implants in crystalline and pre-amorphized Ge, employing rapid thermal annealingmore » at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF{sup +}, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p{sup +}/n junctions formed by BF{sup +} implantation was evaluated.« less
Hines, Thomas; Díez-Pérez, Ismael; Nakamura, Hisao; Shimazaki, Tomomi; Asai, Yoshihiro; Tao, Nongjian
2013-03-06
We report controlling the formation of single-molecule junctions by means of electrochemically reducing two axialdiazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in situ between the molecule and gold electrodes. We report a yield enhancement in molecular junction formation as the electrochemical potential of both junction electrodes approach the reduction potential of the diazonium terminal groups. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond.
ERIC Educational Resources Information Center
Selvarajah, Geeta; Selvarajah, Susila
2016-01-01
Students frequently expressed difficulty in understanding the molecular mechanisms involved in chromosomal recombination. Therefore, we explored alternative methods for presenting the two concepts of the double-strand break model: Holliday junction and heteroduplex formation, and Holliday junction resolution. In addition to a lecture and…
NASA Astrophysics Data System (ADS)
Krell, N.; DeCarlo, K. F.; Caylor, K. K.
2015-12-01
Microrelief formations ("gilgai"), which form due to successive wetting-drying cycles typical of swelling soils, provide ecological hotspots for local fauna and flora, including higher and more robust vegetative growth. The distribution of these gilgai suggests a remarkable degree of regularity. However, it is unclear to what extent the mechanisms that drive gilgai formation are physical, such as desiccation-induced fracturing, or biological in nature, namely antecedent vegetative clustering. We investigated gilgai genesis and pattern formation in a 100 x 100 meter study area with swelling soils in a semiarid grassland at the Mpala Research Center in central Kenya. Our ongoing experiment is composed of three 9m2 treatments: we removed gilgai and limited vegetative growth by herbicide application in one plot, allowed for unrestricted seed dispersal in another, and left gilgai unobstructed in a control plot. To estimate the spatial frequencies of the repeating patterns of gilgai, we obtained ultra-high resolution (0.01-0.03m/pixel) images with an unmanned aerial vehicle (UAV) from which digital elevation models were also generated. Geostatistical analyses using wavelet and fourier methods in 1- and 2-dimensions were employed to characterize gilgai size and distribution. Preliminary results support regular spatial patterning across the gilgaied landscape and heterogeneities may be related to local soil properties and biophysical influences. Local data on gilgai and fracture characteristics suggest that gilgai form at characteristic heights and spacing based on fracture morphology: deep, wide cracks result in large, highly vegetated mounds whereas shallow cracks, induced by animal trails, are less correlated with gilgai size and shape. Our experiments will help elucidate the links between shrink-swell processes and gilgai-vegetation patterning in high activity clay soils and advance our understanding of the mechanisms of gilgai formation in drylands.
First results from TN273 studies of the SE Mariana Forearc rift
NASA Astrophysics Data System (ADS)
Ribeiro, J. M.; Stern, R. J.; Kelley, K. A.; Shaw, A. M.; Shimizu, N.; Martinez, F.; Ishii, T.; Ishizuka, O.; Manton, W. I.
2012-12-01
TN 273 aboard R/V Thomas Thompson (Dec. 22 2011- Jan. 22 2012) studied an unusual region of rifting affecting the southern Mariana forearc S.W. of Guam. The S.E. Mariana Forearc Rift (SEMFR) formed by diffuse tectonic and volcanic deformation (Martinez and Sleeper, this meeting) ~2.7-3.7 Ma ago to accommodate opening of the southernmost Mariana Trough backarc basin. A total of 730 km linear-track of SEMFR seafloor was surveyed with deep-towed side-scan sonar IMI-30. 14 dredges provided samples of SEMFR igneous rocks, analyzed for whole rock (WR) and glass compositions. These new results coupled with results of earlier investigations confirm that SEMFR is dominated by Miocene lavas along with minor gabbro and diabase. SEMFR lavas range in major element composition from primitive basalt to fractionated andesite (Mg# = 0.36-0.73; SiO2 = 50-57 wt%), mainly controlled by crystal fractionation. Rare Earth Element (REE) patterns range from LREE-depleted, N-MORB-like to flat patterns, reflecting different mantle processes (i.e. different sources, degree of melting …). Glassy rinds and olivine-hosted melt inclusions in these lavas contain variable volatile compositions (F = 75-358 ppm, S = 35-1126 ppm, Cl= 74-1400 ppm, CO2 = 15-520 ppm, 0.36-2.36 wt% H2O). SEMFR lavas show spider diagrams with positive anomalies in LILE and negative anomalies in HSFE. SEMFR lavas have backarc basin-like (BAB-like) chemical composition (H2O < 2.5wt%, Ba/Yb~20, Nb/Yb~1 and ɛNd~9) along with stronger enrichment in Rb and Cs than arc and BAB lavas, as demonstrated by their higher Rb/Th and Cs/Ba ratios in WR and glasses, which may reflect the role of the ultra-shallow fluids. Ultra-shallow fluids are derived from the top of the subducting slab, beneath the forearc, where most of the water and the fluid-mobile elements (Rb, Cs, Ba,) are thought to be released (Schmidt and Poli, 1998, EPSL, Savov et al., 2005, G-3). Our results suggest that i) SEMFR lavas formed by metasomatism of a BAB mantle source by ultra-shallow fluids, likely released from subducted sediments and the altered oceanic crust; and ii) the ultra-shallow fluid is aqueous and is characterized by enrichment in Cs and Rb, suggesting that Cs and Rb are decoupled from Ba in ultra-shallow subduction processes.
Signaling from the Podocyte Intercellular Junction to the Actin Cytoskeleton
George, Britta; Holzman, Lawrence B.
2012-01-01
Observations of hereditary glomerular disease support the contention that podocyte intercellular junction proteins are essential for junction formation and maintenance. Genetic deletion of most of these podocyte intercellular junction proteins results in foot process effacement and proteinuria. This review focuses on the current understanding of molecular mechanisms by which podocyte intercellular junction proteins such as the Nephrin-Neph1-Podocin receptor complex coordinate cytoskeletal dynamics and thus intercellular junction formation, maintenance and injury-dependent remodeling. PMID:22958485
III-V/Ge MOS device technologies for low power integrated systems
NASA Astrophysics Data System (ADS)
Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.
2016-11-01
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.
Band-pass Fabry-Pèrot magnetic tunnel junctions
NASA Astrophysics Data System (ADS)
Sharma, Abhishek; Tulapurkar, Ashwin. A.; Muralidharan, Bhaskaran
2018-05-01
We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass Fabry-Pèrot magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (≈5 × 104%) and nearly 1200% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronic device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.
Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching
Chaabane, Ibtihel; Banerjee, Debika; Touayar, Oualid; Cloutier, Sylvain G.
2017-01-01
Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface. PMID:28773215
Gap and tight junctions in the formation of feather branches: A descriptive ultrastructural study.
Alibardi, Lorenzo
2010-08-20
The present study has focused on the distribution and ultrastructure of gap and tight junctions responsible for the formation of the barb/barbule branching in developing feathers using immunocytochemical detection. Apart from desmosomes, both tight and gap junctions are present between differentiating barb/barbule cells and during keratinization. While gap junctions are rare along the perimeter of these cells, tight junctions tend to remain localized in nodes joining barbule cells and between barb cells of the ramus. Occludin and connexin-26 but not connexin-43 have been detected between barb medullary, barb cortical and barbule cells during formation of barbs. Gap junctions are present in supportive cells located in the vicinity of barbule cells and destined to degenerate, but no close junctions are present between supportive and barb/barbule cells. Close junctions mature into penta-laminar junctions that are present between mature barb/barbule cells. Immunolabeling for occludin and Cx26 is rare along these cornified junctions. The junctions allow barb/barbule cells to remain connected until feather-keratin form the mature corneous syncytium that constitutes the barbs. A discussion of the role of gap and tight junctions during feather morphogenesis is presented. 2010 Elsevier GmbH. All rights reserved.
Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu
2013-09-01
We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.
NASA Astrophysics Data System (ADS)
Takatsuka, Toshiko; Hirata, Kouichi; Kobayashi, Yoshinori; Kuroiwa, Takayoshi; Miura, Tsutomu; Matsue, Hideaki
2008-11-01
Certified reference materials (CRMs) of shallow arsenic implants in silicon are now under development at the National Metrology Institute of Japan (NMIJ). The amount of ion-implanted arsenic atoms is quantified by Instrumental Neutron Activation Analysis (INAA) using research reactor JRR-3 in Japan Atomic Energy Agency (JAEA). It is found that this method can evaluate arsenic amounts of 1015 atoms/cm2 with small uncertainties, and is adaptable to shallower dopants. The estimated uncertainties can satisfy the industrial demands for reference materials to calibrate the implanted dose of arsenic at shallow junctions.
Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.
Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin
2017-06-01
With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.
Mukai, Masanori; Kato, Hirotaka; Hira, Seiji; Nakamura, Katsuhiro; Kita, Hiroaki; Kobayashi, Satoru
2011-01-01
Germ cells require intimate associations with surrounding somatic cells during gametogenesis. During oogenesis, gap junctions mediate communication between germ cells and somatic support cells. However, the molecular mechanisms by which gap junctions regulate the developmental processes during oogenesis are poorly understood. We have identified a female sterile allele of innexin2 (inx2), which encodes a gap junction protein in Drosophila. In females bearing this inx2 allele, cyst formation and egg chamber formation are impaired. In wild-type germaria, Inx2 is strongly expressed in escort cells and follicle cells, both of which make close contact with germline cells. We show that inx2 function in germarial somatic cells is required for the survival of early germ cells and promotes cyst formation, probably downstream of EGFR pathway, and that inx2 function in follicle cells promotes egg chamber formation through the regulation of DE-cadherin and Bazooka (Baz) at the boundary between germ cells and follicle cells. Furthermore, genetic experiments demonstrate that inx2 interacts with the zero population growth (zpg) gene, which encodes a germline-specific gap junction protein. These results indicate a multifunctional role for Inx2 gap junctions in somatic support cells in the regulation of early germ cell survival, cyst formation and egg chamber formation. Inx2 gap junctions may mediate the transfer of nutrients and signal molecules between germ cells and somatic support cells, as well as play a role in the regulation of cell adhesion. Copyright © 2011 Elsevier Ireland Ltd. All rights reserved.
NASA Astrophysics Data System (ADS)
Nagano, Yuta; Kohno, Hideo
2017-11-01
Multiwalled carbon nanotubes with tetragonal cross section frequently form junctions with flattened multi-walled carbon nanotubes, a kind of carbon nanoribbon. The three-dimensional structure of the junctions is revealed by transmission-electron-microscopy-based tomography. Two types of junction, parallel and diagonal, are found. The formation mechanism of these two types of junction is discussed in terms of the origami mechanism that was previously proposed to explain the formation of carbon nanoribbons and nanotetrahedra.
Y-junction carbon nanocoils: synthesis by chemical vapor deposition and formation mechanism
Ding, Er-Xiong; Wang, Jing; Geng, Hong-Zhang; Wang, Wen-Yi; Wang, Yan; Zhang, Ze-Chen; Luo, Zhi-Jia; Yang, Hai-Jie; Zou, Cheng-Xiong; Kang, Jianli; Pan, Lujun
2015-01-01
Y-junction carbon nanocoils (Y-CNCs) were synthesized by thermal chemical vapor deposition using Ni catalyst prepared by spray-coating method. According to the emerging morphologies of Y-CNCs, several growth models were advanced to elucidate their formation mechanisms. Regarding the Y-CNCs without metal catalyst in the Y-junctions, fusing of contiguous CNCs and a tip-growth mechanism are considered to be responsible for their formation. However, as for the Y-CNCs with catalyst presence in the Y-junctions, the formation can be ascribed to nanoscale soldering/welding and bottom-growth mechanism. It is found that increasing spray-coating time for catalyst preparation generates agglomerated larger nanoparticles strongly adhering to the substrate, resulting in bottom-growth of CNCs and appearance of the metal catalyst in the Y-junctions. In the contrary case, CNCs catalyzed by isolated smaller nanoparticles develop Y-junctions with an absence of metal catalyst by virtue of weaker adhesion of catalyst with the substrate and tip-growth of CNCs. PMID:26063127
Effects of solar cell environment on contact integrity
NASA Technical Reports Server (NTRS)
Weizer, Victor G.; Fatemi, Navid S.
1993-01-01
The III-V semiconductors react extremely rapidly with most commonly used contact metallizations. This precludes the use of elevated temperatures in the contact formation process for solar cells and other shallow junction devices. These devices must rely upon contact metallizations that are sufficiently conductive in their 'as-fabricated' state. However, while there are a number of non-sintered metallizations that have acceptable characteristics, the lack of a sintering step makes them vulnerable to a variety of environmentally induced degradation processes. The degrading effects resulting from the exposure of unsintered devices to a humid environment and to a vacuum (space) environment are described. It is shown, further, that these effects are magnified by the presence of mechanical damage in the contact metallization. The means to avoid or prevent these degrading interactions are presented.
Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2
Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl
2007-01-01
Background Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. Results We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Conclusion Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation. PMID:18028534
Regulation of tight junction assembly and epithelial morphogenesis by the heat shock protein Apg-2.
Aijaz, Saima; Sanchez-Heras, Elena; Balda, Maria S; Matter, Karl
2007-11-20
Tight junctions are required for epithelial barrier formation and participate in the regulation of signalling mechanisms that control proliferation and differentiation. ZO-1 is a tight junction-associated adaptor protein that regulates gene expression, junction assembly and epithelial morphogenesis. We have previously demonstrated that the heat shock protein Apg-2 binds ZO-1 and thereby regulates its role in cell proliferation. Here, we addressed the question whether Apg-2 is also important for junction formation and epithelial morphogenesis. We demonstrate that depletion of Apg-2 by RNAi in MDCK cells did not prevent formation of functional tight junctions. Similar to ZO-1, however, reduced expression of Apg-2 retarded de novo junction assembly if analysed in a Ca-switch model. Formation of functional junctions, as monitored by measuring transepithelial electrical resistance, and recruitment of tight and adherens junction markers were retarded. If cultured in three dimensional extracellular matrix gels, Apg-2 depleted cells, as previously shown for ZO-1 depleted cells, did not form hollow polarised cysts but poorly organised, irregular structures. Our data indicate that Apg-2 regulates junction assembly and is required for normal epithelial morphogenesis in a three-dimensional culture system, suggesting that Apg-2 is an important regulator of epithelial differentiation. As the observed phenotypes are similar to those previously described for ZO-1 depleted cells and depletion of Apg-2 retards junctional recruitment of ZO-1, regulation of ZO-1 is likely to be an important functional role for Apg-2 during epithelial differentiation.
Multilayer ultra thick resist development for MEMS
NASA Astrophysics Data System (ADS)
Washio, Yasushi; Senzaki, Takahiro; Masuda, Yasuo; Saito, Koji; Obiya, Hiroyuki
2005-05-01
MEMS (Micro-Electro-Mechanical Systems) is achieved through a process technology, called Micro-machining. There are two distinct methods to manufacture a MEMS-product. One method is to form permanent film through photolithography, and the other is to form a non-permanent film resist after photolithography proceeded by etch or plating process. The three-dimensional ultra-fine processing technology based on photolithography, and is assembled by processes, such as anode junction, and post lithography processes such as etching and plating. Currently ORDYL PR-100 (Dry Film Type) is used for the permanent resist process. TOK has developed TMMR S2000 (Liquid Type) and TMMF S2000 (Dry Film Type) also. TOK has developed a new process utilizing these resist. The electro-forming method by photolithography is developed as one of the methods for enabling high resolution and high aspect formation. In recent years, it has become possible to manufacture conventionally difficult multilayer through our development with material and equipment project (M&E). As for material for electro-forming, it was checked that chemically amplified resist is optimal from the reaction mechanism as it is easily removed by the clean solution. Moreover, multiple plating formations were enabled with the resist through a new process. As for the equipment, TOK developed Applicator (It can apply 500 or more μms) and Developer, which achieves high throughput and quality. The detailed plating formations, which a path differs, and air wiring are realizable through M&E. From the above results, opposed to metallic mold plating, electro-forming method by resist, enabled to form high resolution and aspect pattern, at low cost. It is thought that the infinite possibility spreads by applying this process.
Zihni, Ceniz; Munro, Peter M.G.; Elbediwy, Ahmed; Keep, Nicholas H.; Terry, Stephen J.; Harris, John
2014-01-01
Epithelial cells develop morphologically characteristic apical domains that are bordered by tight junctions, the apical–lateral border. Cdc42 and its effector complex Par6–atypical protein kinase c (aPKC) regulate multiple steps during epithelial differentiation, but the mechanisms that mediate process-specific activation of Cdc42 to drive apical morphogenesis and activate the transition from junction formation to apical differentiation are poorly understood. Using a small interfering RNA screen, we identify Dbl3 as a guanine nucleotide exchange factor that is recruited by ezrin to the apical membrane, that is enriched at a marginal zone apical to tight junctions, and that drives spatially restricted Cdc42 activation, promoting apical differentiation. Dbl3 depletion did not affect junction formation but did affect epithelial morphogenesis and brush border formation. Conversely, expression of active Dbl3 drove process-specific activation of the Par6–aPKC pathway, stimulating the transition from junction formation to apical differentiation and domain expansion, as well as the positioning of tight junctions. Thus, Dbl3 drives Cdc42 signaling at the apical margin to regulate morphogenesis, apical–lateral border positioning, and apical differentiation. PMID:24379416
Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yang, Weiquan; Becker, Jacob; Liu, Shi
2014-05-28
This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300 nm thick GaAs absorber, combined with a 5 μm thick Al{sub 0.52}In{sub 0.48}P layer with amore » textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00 V, short-circuit current densities (J{sub sc}) up to 24.5 mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6 mA/cm{sup 2} and 20.7%, respectively.« less
Application of the SEM to the measurement of solar cell parameters
NASA Technical Reports Server (NTRS)
Weizer, V. G.; Andrews, C. W.
1977-01-01
Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
E-cadherin junction formation involves an active kinetic nucleation process
Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng-han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan-Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.
2015-01-01
Epithelial (E)-cadherin-mediated cell−cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin (E-cad-ECD) in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role. PMID:26290581
E-cadherin junction formation involves an active kinetic nucleation process
Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han; ...
2015-08-19
Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less
E-cadherin junction formation involves an active kinetic nucleation process
DOE Office of Scientific and Technical Information (OSTI.GOV)
Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng -han
Epithelial (E)-cadherin-mediated cell–cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest thatmore » the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role.« less
Synergistic effect of ATP for RuvA-RuvB-Holliday junction DNA complex formation.
Iwasa, Takuma; Han, Yong-Woon; Hiramatsu, Ryo; Yokota, Hiroaki; Nakao, Kimiko; Yokokawa, Ryuji; Ono, Teruo; Harada, Yoshie
2015-12-14
The Escherichia coli RuvB hexameric ring motor proteins, together with RuvAs, promote branch migration of Holliday junction DNA. Zero mode waveguides (ZMWs) constitute of nanosized holes and enable the visualization of a single fluorescent molecule under micromolar order of the molecules, which is applicable to characterize the formation of RuvA-RuvB-Holliday junction DNA complex. In this study, we used ZMWs and counted the number of RuvBs binding to RuvA-Holliday junction DNA complex. Our data demonstrated that different nucleotide analogs increased the amount of Cy5-RuvBs binding to RuvA-Holliday junction DNA complex in the following order: no nucleotide, ADP, ATPγS, and mixture of ADP and ATPγS. These results suggest that not only ATP binding to RuvB but also ATP hydrolysis by RuvB facilitates a stable RuvA-RuvB-Holliday junction DNA complex formation.
NASA Astrophysics Data System (ADS)
Matsubara, Atsuko; Kojima, Hisao; Itoga, Toshihiko; Kanehori, Keiichi
1995-08-01
High resolution depth profiling of arsenic (As) implanted into silicon wafers by a chemical technique is described. Silicon wafers are precisely etched through repeated oxidation by hydrogen peroxide solution and dissolution of the oxide by hydrofluoric acid solution. The etched silicon thickness is determined by inductively-coupled plasma atomic emission spectrometry (ICP-AES). Arsenic concentration is determined by hydride generation ICP-AES (HG-ICP-AES) with prereduction using potassium iodide. The detection limit of As in a 4-inch silicon wafer is 2.4×1018 atoms/cm3. The etched silicon thickness is controlled to less than 4±2 atomic layers. Depth profiling of an ultra-shallow As diffusion layer with the proposed method shows good agreement with profiling using the four-probe method or secondary ion mass spectrometry.
Simultaneous junction formation
NASA Technical Reports Server (NTRS)
Campbell, R. B.
1984-01-01
High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.
Systems and methods for advanced ultra-high-performance InP solar cells
Wanlass, Mark
2017-03-07
Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
Alecu, L; Corodeanu, G; Costan, I; Lungu, C; Staicu, A
2001-01-01
The authors present the case of a 48 years old male with lithiasis obstructive icterus who was operated by laparoscopic transcystic approach with choledochoscopy. This minimally invasive technique was very spectacular trough the using of laparoscopic ultrasonography, dissection with Ultra-Shears device and transcystic choledochoscopy. Careful watching of abdominal laparoscopic view and transcystic choledochoscopic view is the particularity of laparoscopic transcystic management of choledocholithiasis. This metod don't let us to explore the biliary tract before the junction between common bile duct and cystic duct.
DOE Office of Scientific and Technical Information (OSTI.GOV)
None
2015-09-01
NREL has demonstrated a 45.7% conversion efficiency for a four-junction solar cell at 234 suns concentration. This achievement represents one of the highest photovoltaic research cell efficiencies ever achieved across all types of solar cells. NREL's new solar cell, which is designed for operation in a concentrator photovoltaic (CPV) system where it can receive more than 1,000 suns of concentrated sunlight, greatly improves earlier designs by adding an additional high quality absorber layer to achieve an ultra-high efficiency.
Two innovative pore pressure calculation methods for shallow deep-water formations
NASA Astrophysics Data System (ADS)
Deng, Song; Fan, Honghai; Liu, Yuhan; He, Yanfeng; Zhang, Shifeng; Yang, Jing; Fu, Lipei
2017-11-01
There are many geological hazards in shallow formations associated with oil and gas exploration and development in deep-water settings. Abnormal pore pressure can lead to water flow and gas and gas hydrate accumulations, which may affect drilling safety. Therefore, it is of great importance to accurately predict pore pressure in shallow deep-water formations. Experience over previous decades has shown, however, that there are not appropriate pressure calculation methods for these shallow formations. Pore pressure change is reflected closely in log data, particularly for mudstone formations. In this paper, pore pressure calculations for shallow formations are highlighted, and two concrete methods using log data are presented. The first method is modified from an E. Philips test in which a linear-exponential overburden pressure model is used. The second method is a new pore pressure method based on P-wave velocity that accounts for the effect of shallow gas and shallow water flow. Afterwards, the two methods are validated using case studies from two wells in the Yingqiong basin. Calculated results are compared with those obtained by the Eaton method, which demonstrates that the multi-regression method is more suitable for quick prediction of geological hazards in shallow layers.
Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.
Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J
2017-11-15
Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.
Gas bubble formation in fused silica generated by ultra-short laser pulses.
Cvecek, Kristian; Miyamoto, Isamu; Schmidt, Michael
2014-06-30
During processing of glass using ultra-fast lasers the formation of bubble-like structures can be observed in several glass types such as fused silica. Their formation can be exploited to generate periodic gratings in glasses but for other glass processing techniques such as waveguide-writing or glass welding by ultra-fast lasers the bubble formation proves often detrimental. In this work we present experiments and their results in order to gain understanding of the origins and on the underlying formation and transportation mechanisms of the gas bubbles.
Epithelial junction formation requires confinement of Cdc42 activity by a novel SH3BP1 complex
Elbediwy, Ahmed; Zihni, Ceniz; Terry, Stephen J.; Clark, Peter
2012-01-01
Epithelial cell–cell adhesion and morphogenesis require dynamic control of actin-driven membrane remodeling. The Rho guanosine triphosphatase (GTPase) Cdc42 regulates sequential molecular processes during cell–cell junction formation; hence, mechanisms must exist that inactivate Cdc42 in a temporally and spatially controlled manner. In this paper, we identify SH3BP1, a GTPase-activating protein for Cdc42 and Rac, as a regulator of junction assembly and epithelial morphogenesis using a functional small interfering ribonucleic acid screen. Depletion of SH3BP1 resulted in loss of spatial control of Cdc42 activity, stalled membrane remodeling, and enhanced growth of filopodia. SH3BP1 formed a complex with JACOP/paracingulin, a junctional adaptor, and CD2AP, a scaffolding protein; both were required for normal Cdc42 signaling and junction formation. The filamentous actin–capping protein CapZ also associated with the SH3BP1 complex and was required for control of actin remodeling. Epithelial junction formation and morphogenesis thus require a dual activity complex, containing SH3BP1 and CapZ, that is recruited to sites of active membrane remodeling to guide Cdc42 signaling and cytoskeletal dynamics. PMID:22891260
Pulsed energy synthesis and doping of silicon carbide
Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.
1995-06-20
A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
Pulsed energy synthesis and doping of silicon carbide
Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.
1995-01-01
A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.
Brain tumour cells interconnect to a functional and resistant network.
Osswald, Matthias; Jung, Erik; Sahm, Felix; Solecki, Gergely; Venkataramani, Varun; Blaes, Jonas; Weil, Sophie; Horstmann, Heinz; Wiestler, Benedikt; Syed, Mustafa; Huang, Lulu; Ratliff, Miriam; Karimian Jazi, Kianush; Kurz, Felix T; Schmenger, Torsten; Lemke, Dieter; Gömmel, Miriam; Pauli, Martin; Liao, Yunxiang; Häring, Peter; Pusch, Stefan; Herl, Verena; Steinhäuser, Christian; Krunic, Damir; Jarahian, Mostafa; Miletic, Hrvoje; Berghoff, Anna S; Griesbeck, Oliver; Kalamakis, Georgios; Garaschuk, Olga; Preusser, Matthias; Weiss, Samuel; Liu, Haikun; Heiland, Sabine; Platten, Michael; Huber, Peter E; Kuner, Thomas; von Deimling, Andreas; Wick, Wolfgang; Winkler, Frank
2015-12-03
Astrocytic brain tumours, including glioblastomas, are incurable neoplasms characterized by diffusely infiltrative growth. Here we show that many tumour cells in astrocytomas extend ultra-long membrane protrusions, and use these distinct tumour microtubes as routes for brain invasion, proliferation, and to interconnect over long distances. The resulting network allows multicellular communication through microtube-associated gap junctions. When damage to the network occurred, tumour microtubes were used for repair. Moreover, the microtube-connected astrocytoma cells, but not those remaining unconnected throughout tumour progression, were protected from cell death inflicted by radiotherapy. The neuronal growth-associated protein 43 was important for microtube formation and function, and drove microtube-dependent tumour cell invasion, proliferation, interconnection, and radioresistance. Oligodendroglial brain tumours were deficient in this mechanism. In summary, astrocytomas can develop functional multicellular network structures. Disconnection of astrocytoma cells by targeting their tumour microtubes emerges as a new principle to reduce the treatment resistance of this disease.
Behavior of a chemically doped graphene junction
NASA Astrophysics Data System (ADS)
Farmer, Damon B.; Lin, Yu-Ming; Afzali-Ardakani, Ali; Avouris, Phaedon
2009-05-01
Polyethylene imine and diazonium salts are used as complementary molecular dopants to engineer a doping profile in a graphene transistor. Electronic transport in this device reveals the presence of two distinct resistance maxima, alluding to neutrality point separation and subsequent formation of a spatially abrupt junction. Carrier mobility in this device is not significantly affected by molecular doping or junction formation, and carrier transmission is found to scale inversely with the effective channel length of the device. Chemical dilutions are used to modify the dopant concentration and, in effect, alter the properties of the junction.
Equivalent electron fluence for solar proton damage in GaAs shallow junction cells
NASA Technical Reports Server (NTRS)
Wilson, J. W.; Stock, L. V.
1984-01-01
The short-circuit current reduction in GaAs shallow junction heteroface solar cells was calculated according to a simplified solar cell damage model in which the nonuniformity of the damage as a function of penetration depth is treated explicitly. Although the equivalent electron fluence was not uniquely defined for low-energy monoenergetic proton exposure, an equivalent electron fluence is found for proton spectra characteristic of the space environment. The equivalent electron fluence ratio was calculated for a typical large solar flare event for which the proton spectrum is PHI(sub p)(E) = A/E(p/sq. cm) where E is in MeV. The equivalent fluence ratio is a function of the cover glass shield thickness or the corresponding cutoff energy E(sub c). In terms of the cutoff energy, the equivalent 1 MeV electron fluence ratio is r(sub p)(E sub c) = 10(9)/E(sub c)(1.8) where E(sub c) is in units of KeV.
Operation and Applications of the Boron Cathodic Arc Ion Source
NASA Astrophysics Data System (ADS)
Williams, J. M.; Klepper, C. C.; Chivers, D. J.; Hazelton, R. C.; Freeman, J. H.
2008-11-01
The boron cathodic arc ion source has been developed with a view to several applications, particularly the problem of shallow junction doping in semiconductors. Research has included not only development and operation of the boron cathode, but other cathode materials as well. Applications have included a large deposition directed toward development of a neutron detector and another deposition for an orthopedic coating, as well as the shallow ion implantation function. Operational experience is described and information pertinent to commercial operation, extracted from these experiments, is presented.
Ullom, Joel N.
2003-06-24
A normal-insulator-superconductor (NIS) microrefrigerator in which a superconducting single crystal is both the substrate and the superconducting electrode of the NIS junction. The refrigerator consists of a large ultra-pure superconducting single crystal and a normal metal layer on top of the superconducting crystal, separated by a thin insulating layer. The superconducting crystal can be either cut from bulk material or grown as a thick epitaxial film. The large single superconducting crystal allows quasiparticles created in the superconducting crystal to easily diffuse away from the NIS junction through the lattice structure of the crystal to normal metal traps to prevent the quasiparticles from returning across the NIS junction. In comparison to thin film NIS refrigerators, the invention provides orders of magnitude larger cooling power than thin film microrefrigerators. The superconducting crystal can serve as the superconducting electrode for multiple NIS junctions to provide an array of microrefrigerators. The normal electrode can be extended and supported by microsupports to provide support and cooling of sensors or arrays of sensors.
Planar concentrators at the étendue limit
NASA Astrophysics Data System (ADS)
Winston, Roland; Gordon, Jeffrey M.
2005-08-01
Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultra-compact planar dielectric-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multi-junction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm2 cell.
Thin silicon solar cell performance characteristics
NASA Technical Reports Server (NTRS)
Gay, C. F.
1978-01-01
Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.
Pulsed excimer laser processing for cost-effective solar cells
NASA Technical Reports Server (NTRS)
Wong, David C.
1985-01-01
The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gudmundsson, Sanna; Wilbe, Maria; Ekvall, Sara
Revertant mosaicism (RM) is a naturally occurring phenomenon where the pathogenic effect of a germline mutation is corrected by a second somatic event. Development of healthy-looking skin due to RM has been observed in patients with various inherited skin disorders, but not in connexin-related disease. We aimed to clarify the underlying molecular mechanisms of suspected RM in the skin of a patient with keratitis-ichthyosis-deafness (KID) syndrome. The patient was diagnosed with KID syndrome due to characteristic skin lesions, hearing deficiency and keratitis. Investigation of GJB2 encoding connexin (Cx) 26 revealed heterozygosity for the recurrent de novo germline mutation, c.148G >more » A, p.Asp50Asn. At age 20, the patient developed spots of healthy-looking skin that grew in size and number within widespread erythrokeratodermic lesions. Ultra-deep sequencing of two healthy-looking skin biopsies identified five somatic nonsynonymous mutations, independently present in cis with the p.Asp50Asn mutation. Functional studies of Cx26 in HeLa cells revealed co-expression of Cx26-Asp50Asn and wild-type Cx26 in gap junction channel plaques. However, Cx26-Asp50Asn with the second-site mutations identified in the patient displayed no formation of gap junction channel plaques. We argue that the second-site mutations independently inhibit Cx26-Asp50Asn expression in gap junction channels, reverting the dominant negative effect of the p.Asp50Asn mutation. Finally to our knowledge, this is the first time RM has been reported to result in the development of healthy-looking skin in a patient with KID syndrome.« less
Gudmundsson, Sanna; Wilbe, Maria; Ekvall, Sara; ...
2017-02-01
Revertant mosaicism (RM) is a naturally occurring phenomenon where the pathogenic effect of a germline mutation is corrected by a second somatic event. Development of healthy-looking skin due to RM has been observed in patients with various inherited skin disorders, but not in connexin-related disease. We aimed to clarify the underlying molecular mechanisms of suspected RM in the skin of a patient with keratitis-ichthyosis-deafness (KID) syndrome. The patient was diagnosed with KID syndrome due to characteristic skin lesions, hearing deficiency and keratitis. Investigation of GJB2 encoding connexin (Cx) 26 revealed heterozygosity for the recurrent de novo germline mutation, c.148G >more » A, p.Asp50Asn. At age 20, the patient developed spots of healthy-looking skin that grew in size and number within widespread erythrokeratodermic lesions. Ultra-deep sequencing of two healthy-looking skin biopsies identified five somatic nonsynonymous mutations, independently present in cis with the p.Asp50Asn mutation. Functional studies of Cx26 in HeLa cells revealed co-expression of Cx26-Asp50Asn and wild-type Cx26 in gap junction channel plaques. However, Cx26-Asp50Asn with the second-site mutations identified in the patient displayed no formation of gap junction channel plaques. We argue that the second-site mutations independently inhibit Cx26-Asp50Asn expression in gap junction channels, reverting the dominant negative effect of the p.Asp50Asn mutation. Finally to our knowledge, this is the first time RM has been reported to result in the development of healthy-looking skin in a patient with KID syndrome.« less
Ooshio, Takako; Kobayashi, Reiko; Ikeda, Wataru; Miyata, Muneaki; Fukumoto, Yuri; Matsuzawa, Naomi; Ogita, Hisakazu; Takai, Yoshimi
2010-02-12
Tight junctions (TJs) and adherens junctions (AJs) are major junctional apparatuses in epithelial cells. Claudins and junctional adhesion molecules (JAMs) are major cell adhesion molecules (CAMs) at TJs, whereas cadherins and nectins are major CAMs at AJs. Claudins and JAMs are associated with ZO proteins, whereas cadherins are associated with beta- and alpha-catenins, and nectins are associated with afadin. We previously showed that nectins first form cell-cell adhesions where the cadherin-catenin complex is recruited to form AJs, followed by the recruitment of the JAM-ZO and claudin-ZO complexes to the apical side of AJs to form TJs. It is not fully understood how TJ components are recruited to the apical side of AJs. We studied the roles of afadin and ZO-1 in the formation of TJs in Madin-Darby canine kidney (MDCK) cells. Before the formation of TJs, ZO-1 interacted with afadin through the two proline-rich regions of afadin and the SH3 domain of ZO-1. During and after the formation of TJs, ZO-1 dissociated from afadin and associated with JAM-A. Knockdown of afadin impaired the formation of both AJs and TJs in MDCK cells, whereas knockdown of ZO-1 impaired the formation of TJs, but not AJs. Re-expression of full-length afadin restored the formation of both AJs and TJs in afadin-knockdown MDCK cells, whereas re-expression of afadin-DeltaPR1-2, which is incapable of binding to ZO-1, restored the formation of AJs, but not TJs. These results indicate that the transient interaction of afadin with ZO-1 is necessary for the formation of TJs in MDCK cells.
Ooshio, Takako; Kobayashi, Reiko; Ikeda, Wataru; Miyata, Muneaki; Fukumoto, Yuri; Matsuzawa, Naomi; Ogita, Hisakazu; Takai, Yoshimi
2010-01-01
Tight junctions (TJs) and adherens junctions (AJs) are major junctional apparatuses in epithelial cells. Claudins and junctional adhesion molecules (JAMs) are major cell adhesion molecules (CAMs) at TJs, whereas cadherins and nectins are major CAMs at AJs. Claudins and JAMs are associated with ZO proteins, whereas cadherins are associated with β- and α-catenins, and nectins are associated with afadin. We previously showed that nectins first form cell-cell adhesions where the cadherin-catenin complex is recruited to form AJs, followed by the recruitment of the JAM-ZO and claudin-ZO complexes to the apical side of AJs to form TJs. It is not fully understood how TJ components are recruited to the apical side of AJs. We studied the roles of afadin and ZO-1 in the formation of TJs in Madin-Darby canine kidney (MDCK) cells. Before the formation of TJs, ZO-1 interacted with afadin through the two proline-rich regions of afadin and the SH3 domain of ZO-1. During and after the formation of TJs, ZO-1 dissociated from afadin and associated with JAM-A. Knockdown of afadin impaired the formation of both AJs and TJs in MDCK cells, whereas knockdown of ZO-1 impaired the formation of TJs, but not AJs. Re-expression of full-length afadin restored the formation of both AJs and TJs in afadin-knockdown MDCK cells, whereas re-expression of afadin-ΔPR1–2, which is incapable of binding to ZO-1, restored the formation of AJs, but not TJs. These results indicate that the transient interaction of afadin with ZO-1 is necessary for the formation of TJs in MDCK cells. PMID:20008323
NASA Technical Reports Server (NTRS)
Call, R. L.
1973-01-01
Silicon solar cells operating with induced junctions rather than diffused junctions have been fabricated and tested. Induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) applying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the response of the inversion layer cell to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. The greater sensitivity occurs because of the shallow junction and the strong electric field at the surface.
Structure–property relationships in atomic-scale junctions: Histograms and beyond
Mark S. Hybertsen; Venkataraman, Latha
2016-03-03
Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less
Structure–property relationships in atomic-scale junctions: Histograms and beyond
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mark S. Hybertsen; Venkataraman, Latha
Over the past 10 years, there has been tremendous progress in the measurement, modeling and understanding of structure–function relationships in single molecule junctions. Numerous research groups have addressed significant scientific questions, directed both to conductance phenomena at the single molecule level and to the fundamental chemistry that controls junction functionality. Many different functionalities have been demonstrated, including single-molecule diodes, optically and mechanically activated switches, and, significantly, physical phenomena with no classical analogues, such as those based on quantum interference effects. Experimental techniques for reliable and reproducible single molecule junction formation and characterization have led to this progress. In particular, themore » scanning tunneling microscope based break-junction (STM-BJ) technique has enabled rapid, sequential measurement of large numbers of nanoscale junctions allowing a statistical analysis to readily distinguish reproducible characteristics. Furthermore, harnessing fundamental link chemistry has provided the necessary chemical control over junction formation, enabling measurements that revealed clear relationships between molecular structure and conductance characteristics.« less
Radio-frequency response of single pores and artificial ion channels
NASA Astrophysics Data System (ADS)
Kim, H. S.; Ramachandran, S.; Stava, E.; van der Weide, D. W.; Blick, R. H.
2011-09-01
Intercellular communication relies on ion channels and pores in cell membranes. These protein-formed channels enable the exchange of ions and small molecules to electrically and/or chemically interact with the cells. Traditionally, recordings on single-ion channels and pores are performed in the dc regime, due to the extremely high impedance of these molecular junctions. This paper is intended as an introduction to radio-frequency (RF) recordings of single-molecule junctions in bilipid membranes. First, we demonstrate how early approaches to using microwave circuitry as readout devices for ion channel formation were realized. The second step will then focus on how to engineer microwave coupling into the high-impedance channel by making use of bio-compatible micro-coaxial lines. We then demonstrate integration of an ultra-broadband microwave circuit for the direct sampling of single α-hemolysin pores in a suspended bilipid membrane. Simultaneous direct current recordings reveal that we can monitor and correlate the RF transmission signal. This enables us to relate the open-close states of the direct current to the RF signal. Altogether, our experiments lay the ground for an RF-readout technique to perform real-time in vitro recordings of pores. The technique thus holds great promise for research and drug screening applications. The possible enhancement of sampling rates of single channels and pores by the large recording bandwidth will allow us to track the passage of single ions.
Rudolf, Mareike; Tetik, Nalan; Ramos-León, Félix; Flinner, Nadine; Ngo, Giang; Stevanovic, Mara; Burnat, Mireia; Pernil, Rafael; Flores, Enrique; Schleiff, Enrico
2015-06-30
Filamentous, heterocyst-forming cyanobacteria exchange nutrients and regulators between cells for diazotrophic growth. Two alternative modes of exchange have been discussed involving transport either through the periplasm or through septal junctions linking adjacent cells. Septal junctions and channels in the septal peptidoglycan are likely filled with septal junction complexes. While possible proteinaceous factors involved in septal junction formation, SepJ (FraG), FraC, and FraD, have been identified, little is known about peptidoglycan channel formation and septal junction complex anchoring to the peptidoglycan. We describe a factor, SjcF1, involved in regulation of septal junction channel formation in the heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120. SjcF1 interacts with the peptidoglycan layer through two peptidoglycan-binding domains and is localized throughout the cell periphery but at higher levels in the intercellular septa. A strain with an insertion in sjcF1 was not affected in peptidoglycan synthesis but showed an altered morphology of the septal peptidoglycan channels, which were significantly wider in the mutant than in the wild type. The mutant was impaired in intercellular exchange of a fluorescent probe to a similar extent as a sepJ deletion mutant. SjcF1 additionally bears an SH3 domain for protein-protein interactions. SH3 binding domains were identified in SepJ and FraC, and evidence for interaction of SjcF1 with both SepJ and FraC was obtained. SjcF1 represents a novel protein involved in structuring the peptidoglycan layer, which links peptidoglycan channel formation to septal junction complex function in multicellular cyanobacteria. Nonetheless, based on its subcellular distribution, this might not be the only function of SjcF1. Cell-cell communication is central not only for eukaryotic but also for multicellular prokaryotic systems. Principles of intercellular communication are well established for eukaryotes, but the mechanisms and components involved in bacteria are just emerging. Filamentous heterocyst-forming cyanobacteria behave as multicellular organisms and represent an excellent model to study prokaryotic cell-cell communication. A path for intercellular metabolite exchange appears to involve transfer through molecular structures termed septal junctions. They are reminiscent of metazoan gap junctions that directly link adjacent cells. In cyanobacteria, such structures need to traverse the peptidoglycan layers in the intercellular septa of the filament. Here we describe a factor involved in the formation of channels across the septal peptidoglycan layers, thus contributing to the multicellular behavior of these organisms. Copyright © 2015 Rudolf et al.
XPS studies of MgO based magnetic tunnel junction structures
NASA Astrophysics Data System (ADS)
Read, John; Mather, Phil; Tan, Eileen; Buhrman, Robert
2006-03-01
The very high tunneling magnetoresistance (TMR) obtained in MgO magnetic tunnel junctions (MTJ)^(1,2) motivates the investigation of the electronic properties of the MgO barrier layer and the study of the ferromagnetic metal - MgO interface chemistry. Such large TMR values are predicted by theory due to the high degree of order apparent in the barrier and electrode materials. However, as grown ultra-thin MgO films generally contain defects that can influence electron transport properties through the creation of low energy states within the bulk MgO band-gap. We will report the results of x-ray photoelectron spectroscopy (XPS) studies of (001) textured ultra-thin MgO layers that are prepared by RF magnetron sputtering and electron beam evaporation on ordered ferromagnetic electrodes and in ordered MTJ structures with and without post growth vacuum annealing. XPS spectra for both MgO deposition techniques clearly indicate a surface oxygen species that is likely bound by defects in the oxide^(3) in half-formed junctions and improvements in MgO quality after counter electrode deposition. We will discuss our results regarding the chemical properties of the oxide and its interfaces directed towards possibly providing guidance to engineer improved MgO MTJ devices. [1] S.S.P. Parkin et. al., Nature Materials, 3, 862 (2004). [2] S. Yuasa et. al., Nature Materials, 3, 868 (2004). [3] E. Tan et. al. , Phys. Rev. B. , 71, 161401 (2005).
"V-junction": a novel structure for high-speed generation of bespoke droplet flows.
Ding, Yun; Casadevall i Solvas, Xavier; deMello, Andrew
2015-01-21
We present the use of microfluidic "V-junctions" as a droplet generation strategy that incorporates enhanced performance characteristics when compared to more traditional "T-junction" formats. This includes the ability to generate target-sized droplets from the very first one, efficient switching between multiple input samples, the production of a wide range of droplet sizes (and size gradients) and the facile generation of droplets with residence time gradients. Additionally, the use of V-junction droplet generators enables the suspension and subsequent resumption of droplet flows at times defined by the user. The high degree of operational flexibility allows a wide range of droplet sizes, payloads, spacings and generation frequencies to be obtained, which in turn provides for an enhanced design space for droplet-based experimentation. We show that the V-junction retains the simplicity of operation associated with T-junction formats, whilst offering functionalities normally associated with droplet-on-demand technologies.
Van Campenhout, Claude A.; Eitelhuber, Andrea; Gloeckner, Christian J.; Giallonardo, Patrizia; Gegg, Moritz; Oller, Heide; Grant, Seth G.N.; Krappmann, Daniel; Ueffing, Marius; Lickert, Heiko
2011-01-01
Summary The Drosophila Discs large (Dlg) scaffolding protein acts as a tumor suppressor regulating basolateral epithelial polarity and proliferation. In mammals, four Dlg homologs have been identified; however, their functions in cell polarity remain poorly understood. Here, we demonstrate that the X-linked mental retardation gene product Dlg3 contributes to apical-basal polarity and epithelial junction formation in mouse organizer tissues, as well as to planar cell polarity in the inner ear. We purified complexes associated with Dlg3 in polarized epithelial cells, including proteins regulating directed trafficking and tight junction formation. Remarkably, of the four Dlg family members, Dlg3 exerts a distinct function by recruiting the ubiquitin ligases Nedd4 and Nedd4-2 through its PPxY motifs. We found that these interactions are required for Dlg3 monoubiquitination, apical membrane recruitment, and tight junction consolidation. Our findings reveal an unexpected evolutionary diversification of the vertebrate Dlg family in basolateral epithelium formation. PMID:21920314
DOE Office of Scientific and Technical Information (OSTI.GOV)
Oliviero, E.; David, M. L.; Beaufort, M. F.
The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes placemore » and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.« less
Application of the SEM to the measurement of solar cell parameters
NASA Technical Reports Server (NTRS)
Weizer, V. G.; Andrews, C. W.
1977-01-01
A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
A Shallow Underground Laboratory for Low-Background Radiation Measurements and Materials Development
DOE Office of Scientific and Technical Information (OSTI.GOV)
Aalseth, Craig E.; Bonicalzi, Ricco; Cantaloub, Michael G.
Abstract: Pacific Northwest National Laboratory recently commissioned a new shallow underground laboratory, located at a depth of approximately 30 meters water-equivalent. This new addition to the small class of radiation measurement laboratories located at modest underground depths worldwide houses the latest generation of custom-made, high-efficiency, low-background gamma-ray spectrometers and gas proportional counters. This manuscript describes the unique capabilities present in the shallow underground laboratory; these include large-scale ultra-pure materials production and a suite of radiation detection systems. Reported data characterize the degree of background reduction achieved through a combination of underground location, graded shielding, and rejection of cosmic-ray events. Wemore » conclude by presenting measurement targets and future opportunities.« less
Ouellette, Marie-Hélène; Martin, Emmanuel; Lacoste-Caron, Germain; Hamiche, Karim; Jenna, Sarah
2016-08-01
Collective epithelial cell migration requires the maintenance of cell-cell junctions while enabling the generation of actin-rich protrusions at the leading edge of migrating cells. Ventral enclosure of Caenorhabditis elegans embryos depends on the collective migration of anterior-positioned leading hypodermal cells towards the ventral midline where they form new junctions with their contralateral neighbours. In this study, we characterized the zygotic function of RGA-7/SPV-1, a CDC-42/Cdc42 and RHO-1/RhoA-specific Rho GTPase-activating protein, which controls the formation of actin-rich protrusions at the leading edge of leading hypodermal cells and the formation of new junctions between contralateral cells. We show that RGA-7 controls these processes in an antagonistic manner with the CDC-42's effector WSP-1/N-WASP and the CDC-42-binding proteins TOCA-1/2/TOCA1. RGA-7 is recruited to spatially distinct locations at junctions between adjacent leading cells, where it promotes the accumulation of clusters of activated CDC-42. It also inhibits the spreading of these clusters towards the leading edge of the junctions and regulates their accumulation and distribution at new junctions formed between contralateral leading cells. Our study suggests that RGA-7 controls collective migration and junction formation between epithelial cells by spatially restricting active CDC-42 within cell-cell junctions. © The Author (2015). Published by Oxford University Press on behalf of Journal of Molecular Cell Biology, IBCB, SIBS, CAS. All rights reserved.
Process research of non-CZ silicon material
NASA Technical Reports Server (NTRS)
Campbell, R. B.
1984-01-01
Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.
Inverse models of gravity data from the Red Sea-Aden-East African rifts triple junction zone
NASA Astrophysics Data System (ADS)
Tiberi, Christel; Ebinger, Cynthia; Ballu, Valérie; Stuart, Graham; Oluma, Befekadu
2005-11-01
The combined effects of stretching and magmatism permanently modify crustal structure in continental rifts and volcanic passive margins. The Red Sea-Gulf of Aden-Ethiopian rift triple junction zone provides a unique opportunity to examine incipient volcanic margin formation above or near an asthenospheric upwelling. We use gravity inversions and forward modelling to examine lateral variations in crust and upper mantle structure across the Oligocene flood basalt province, which has subsequently been extended to form the Red Sea, Gulf of Aden and Main Ethiopian rifts. We constrain and test the obtained models with new and existing seismic estimates of crustal thickness. In particular, we predict crustal thickness across the uplifted plateaux and rift valleys, and calibrate our results with recent receiver function analyses. We discuss the results together with a 3-D distribution of density contrasts in terms of magmatic margin structure. The main conclusions are: (1) a denser (+240 kg m-3) and/or a thinner crust (23 km) in the triple junction zone of the Afar depression; (2) a shallower Moho is found along the Main Ethiopian rift axis, with crustal thickness values decreasing from 32-33 km in the south to 24 km beneath the southern Afar depression; (3) thicker crust (~40 km) is present beneath the broad uplifted Oligocene flood basalt province, suggesting that crustal underplating compensates most of the plateau uplift and (4) possible magmatic underplating or a segmentation in the rift structure is observed at ~8°N, 39°W beneath several collapsed caldera complexes. These results indicate that magmatism has profoundly changed crustal structure throughout the flood basalt province.
Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian
2017-12-04
High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.
NASA Astrophysics Data System (ADS)
Kumar, Sandeep; Iyer, S. Sundar Kumar
2017-04-01
Accurate and convenient evaluation methods of the interfacial barrier ϕb for charge carriers in metal semiconductor (MS) junctions are important for designing and building better opto-electronic devices. This becomes more critical for organic semiconductor devices where a plethora of molecules are in use and standardised models applicable to myriads of material combinations for the different devices may have limited applicability. In this paper, internal photoemission (IPE) from spectral response (SR) in the ultra-violet to near infra-red range of different MS junctions of metal-organic semiconductor-metal (MSM) test structures is used to determine more realistic MS ϕb values. The representative organic semiconductor considered is [6, 6]-phenyl C61 butyric acid methyl ester, and the metals considered are Al and Au. The IPE signals in the SR measurement of the MSM device are identified and separated before it is analysed to estimate ϕb for the MS junction. The analysis of IPE signals under different bias conditions allows the evaluation of ϕb for both the front and back junctions, as well as for symmetric MSM devices.
van Gool, Alain J.; Hajibagheri, Nasser M.A.; Stasiak, Andrzej; West, Stephen C.
1999-01-01
Genetic recombination can lead to the formation of intermediates in which DNA molecules are linked by Holliday junctions. Movement of a junction along DNA, by a process known as branch migration, leads to heteroduplex formation, whereas resolution of a junction completes the recombination process. Holliday junctions can be resolved in either of two ways, yielding products in which there has, or has not, been an exchange of flanking markers. The ratio of these products is thought to be determined by the frequency with which the two isomeric forms (conformers) of the Holliday junction are cleaved. Recent studies with enzymes that process Holliday junctions in Escherichia coli, the RuvABC proteins, however, indicate that protein binding causes the junction to adopt an open square-planar configuration. Within such a structure, DNA isomerization can have little role in determining the orientation of resolution. To determine the role that junction-specific protein assembly has in determining resolution bias, a defined in vitro system was developed in which we were able to direct the assembly of the RuvABC resolvasome. We found that the bias toward resolution in one orientation or the other was determined simply by the way in which the Ruv proteins were positioned on the junction. Additionally, we provide evidence that supports current models on RuvABC action in which Holliday junction resolution occurs as the resolvasome promotes branch migration. PMID:10421637
NASA Astrophysics Data System (ADS)
Esposito, Daniel V.
2015-08-01
Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.
Time-Resolved Chemical Mapping in Light-Emitting Electrochemical Cells.
Jafari, Mohammad Javad; Liu, Jiang; Engquist, Isak; Ederth, Thomas
2017-01-25
An understanding of the doping and ion distributions in light-emitting electrochemical cells (LECs) is required to approach a realistic conduction model which can precisely explain the electrochemical reactions, p-n junction formation, and ion dynamics in the active layer and to provide relevant information about LECs for systematic improvement of function and manufacture. Here, Fourier-transform infrared (FTIR) microscopy is used to monitor anion density profile and polymer structure in situ and for time-resolved mapping of electrochemical doping in an LEC under bias. The results are in very good agreement with the electrochemical doping model with respect to ion redistribution and formation of a dynamic p-n junction in the active layer. We also physically slow ions by decreasing the working temperature and study frozen-junction formation and immobilization of ions in a fixed-junction LEC device by FTIR imaging. The obtained results show irreversibility of the ion redistribution and polymer doping in a fixed-junction device. In addition, we demonstrate that infrared microscopy is a useful tool for in situ characterization of electroactive organic materials.
Mechanical Control of Myotendinous Junction Formation and Tendon Differentiation during Development.
Valdivia, Mauricio; Vega-Macaya, Franco; Olguín, Patricio
2017-01-01
The development of the musculoskeletal system is a great model to study the interplay between chemical and mechanical inter-tissue signaling in cell adhesion, tissue morphogenesis and differentiation. In both vertebrates and invertebrates (e.g., Drosophila melanogaster ) the formation of muscle-tendon interaction generates mechanical forces which are required for myotendinous junction maturation and tissue differentiation. In addition, these forces must be withstood by muscles and tendons in order to prevent detachment from each other, deformation or even losing their integrity. Extracellular matrix remodeling at the myotendinous junction is key to resist mechanical load generated by muscle contraction. Recent evidences in vertebrates indicate that mechanical forces generated during junction formation regulate chemical signaling leading to extracellular matrix remodeling, however, the mechanotransduction mechanisms associated to this response remains elusive. In addition to extracellular matrix remodeling, the ability of Drosophila tendon-cells to bear mechanical load depends on rearrangement of tendon cell cytoskeleton, thus studying the molecular mechanisms involved in this process is critical to understand the contribution of mechanical forces to the development of the musculoskeletal system. Here, we review recent findings regarding the role of chemical and mechanical signaling in myotendinous junction formation and tendon differentiation, and discuss molecular mechanisms of mechanotransduction that may allow tendon cells to withstand mechanical load during development of the musculoskeletal system.
Marker of cemento-periodontal ligament junction associated with periodontal regeneration.
Hara, Ryohko; Wato, Masahiro; Tanaka, Akio
2005-06-01
The purpose of this study was to identify factors promoting formation of the cemento-periodontal ligament junction. Regeneration of the cemento-periodontal ligament junction is an important factor in recovery of the connective tissue attachment to the cementum and it is important to identify all specific substances that promote its formation. To clarify the substances involved in cemento-periodontal ligament junction formation, we produced a monoclonal antibody (mAb) to human cemento-periodontal ligament junction (designated as the anti-TAP mAb) and examined its immunostaining properties and reactive antigen. Hybridomas producing monoclonal antibody against human cemento-periodontal ligament junction antigens were established by fusing P3U1 mouse myeloma cells with spleen cells from BALB/c mice immunized with homogenized human cemento-periodontal ligament junction. The mAb, the anti-TAP mAb for cemento-periodontal ligament junction, was then isolated. The immunoglobulin class and light chain of the mAb were examined using an isotyping kit. Before immunostaining, antigen determination using an enzymatic method or heating was conducted. Human teeth, hard tissue-forming lesions, and animal tissues were immunostained by the anti-TAP mAb. The anti-TAP mAb was positive in human cemento-periodontal ligament junction and predentin but negative in all other human and animal tissues examined. In the cemento-osseous lesions, the anti-TAP mAb was positive in the peripheral area of the cementum and cementum-like hard tissues and not in the bone and bone-like tissues. The anti-TAP mAb showed IgM (kappa) and recognized phosphoprotein. The anti-TAP mAb is potentially useful for developing new agents promoting cementogenesis and periodontal regeneration.
Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices
NASA Technical Reports Server (NTRS)
Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott
2003-01-01
Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.
NASA Astrophysics Data System (ADS)
Bershtein, V.; Fainleib, A.; Kirilenko, D.; Yakushev, P.; Gusakova, K.; Lavrenyuk, N.; Ryzhov, V.
2016-05-01
A series of Cyanate Ester Resins (CER)-based composites containing 0.01-10 wt. % silica, introduced by sol-gel method, was synthesized using tetraethoxysilane (TEOS) and γ-aminopropyltrimethoxysilane (APTMS), and their nanostructure and properties were characterized by means of STEM/EDXS, Far-IR spectroscopy, DMA and DSC methods. It was revealed that the most substantial positive impact on CER dynamics, thermal and mechanical properties is attained at ultra-low silica contents, e.g., at 0.1 wt. % silica where Tg and modulus increase, respectively, by 50° and 60%. In this case, silica nanoclusters are absent in the composite, and only chemically incorporated silica junctions of subnanometric size in the densely-crosslinked CER network could be implied. These composites can be designated as "polymer subnanocomposites". Contrarily, formation of silica nanoclusters and especially their aggregates of hundreds nanometers in size at silica contents of 2-10 wt. % led to the distinct negative impact on the matrix properties.
Zhu, Guijie; Sun, Liangliang; Heidbrink-Thompson, Jennifer; Kuntumalla, Srilatha; Lin, Hung-yu; Larkin, Christopher J.; McGivney, James B.; Dovichi, Norman J.
2016-01-01
We have evaluated capillary zone electrophoresis-electrospray ionization-tandem mass spectrometry (CZE-ESI-MS/MS) for detection of trace amounts of host cell protein impurities in recombinant therapeutics. Compared to previously published procedures, we have optimized the buffer pH used in the formation of a pH junction to increase injection volume. We also prepared a five-point calibration curve by spiking twelve standard proteins into a solution of a human monoclonal antibody. A custom CZE-MS/MS system was used to analyze the tryptic digest of this mixture without depletion of the antibody. CZE generated a ~70 min separation window (~90 min total analysis duration) and ~300 peak capacity. We also analyzed the sample using ultra-performance liquid chromatography (UPLC)-MS/MS. CZE-MS/MS generated ~five times higher base peak intensity and more peptide identifications for low-level spiked proteins. Both methods detected all proteins spiked at the ~100 ppm level with respect to the antibody. PMID:26530276
Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai
2017-10-27
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio
2016-11-21
We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm frommore » the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.« less
Gas bubble formation and its pressure signature in T-junction of a microreactor
NASA Astrophysics Data System (ADS)
Pouya, Shahram; Koochesfahani, Manoochehr
2013-11-01
The segmented gas-liquid flow is of particular interest in microreactors used for high throughput material synthesis with enhanced mixing and more efficient reaction. A typical geometry to introduce gas plugs into the reactor is a T-junction where the dispersed liquid is squeezed and pinched by the continuous fluid in the main branch of the junction. We present experimental data of time resolved pressure along with synchronous imaging of the drop formation at the junction to show the transient behavior of the process. The stability of the slug regime and the regularity of the slug/plug pattern are investigated in this study. This work was supported by the CRC Program of the National Science Foundation, Grant Number CHE-0714028.
Alternative types of molecule-decorated atomic chains in Au–CO–Au single-molecule junctions
Balogh, Zoltán; Makk, Péter
2015-01-01
Summary We investigate the formation and evolution of Au–CO single-molecule break junctions. The conductance histogram exhibits two distinct molecular configurations, which are further investigated by a combined statistical analysis. According to conditional histogram and correlation analysis these molecular configurations show strong anticorrelations with each other and with pure Au monoatomic junctions and atomic chains. We identify molecular precursor configurations with somewhat higher conductance, which are formed prior to single-molecule junctions. According to detailed length analysis two distinct types of molecule-affected chain-formation processes are observed, and we compare these results to former theoretical calculations considering bridge- and atop-type molecular configurations where the latter has reduced conductance due to destructive Fano interference. PMID:26199840
Alternative types of molecule-decorated atomic chains in Au-CO-Au single-molecule junctions.
Balogh, Zoltán; Makk, Péter; Halbritter, András
2015-01-01
We investigate the formation and evolution of Au-CO single-molecule break junctions. The conductance histogram exhibits two distinct molecular configurations, which are further investigated by a combined statistical analysis. According to conditional histogram and correlation analysis these molecular configurations show strong anticorrelations with each other and with pure Au monoatomic junctions and atomic chains. We identify molecular precursor configurations with somewhat higher conductance, which are formed prior to single-molecule junctions. According to detailed length analysis two distinct types of molecule-affected chain-formation processes are observed, and we compare these results to former theoretical calculations considering bridge- and atop-type molecular configurations where the latter has reduced conductance due to destructive Fano interference.
Galaxy collisions as a mechanism of ultra diffuse galaxy (UDG) formation
NASA Astrophysics Data System (ADS)
Baushev, A. N.
2018-04-01
We suggest a possible mechanism of ultra diffuse galaxy formation: the UDGs may occur as a result of a central collision of galaxies. If the galaxies are young and contain a lot of gas, the collision may kick all the gas off the systems and thus strongly suppress any further star formation. As a result, the galaxies now have a very low surface brightness and other properties typical of the ultra diffuse galaxies. We use the Coma cluster (where numerous UDGs were recently discovered) to test the efficiency of the process. The mechanism works very well and can transform a significant fraction of the cluster population into ultra diffuse galaxies. The UDGs formed by the process concentrate towards the center of the cluster, and their globular cluster systems remain undamaged, in accordance with observational results. The projected surface density of UDGs in the cluster may help us to recognize the mechanism of UDG formation, or clarify relative contributions of several possible competitive mechanisms at work.
Low Power Band to Band Tunnel Transistors
2010-12-15
burden, to Washington Headquarters Services , Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA...issues like poor dielectric interface quality and low density of states[1.10]. Further homo junction TFETs in these ultra low bandgap materials exhibit...drain leakage current on MOSFET scaling”, International Electron Devices Meeting, Vol.33, pp: 718-721, 1987 [1.3] W. M. Reddick, G. A. Amaratunga
Development of a high efficiency thin silicon solar cell
NASA Technical Reports Server (NTRS)
Lindmayer, J.; Wrigley, C. Y.
1977-01-01
A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.
Discovery of an Ultra-diffuse Galaxy in the Pisces--Perseus Supercluster
NASA Astrophysics Data System (ADS)
Martínez-Delgado, David; Läsker, Ronald; Sharina, Margarita; Toloba, Elisa; Fliri, Jürgen; Beaton, Rachael; Valls-Gabaud, David; Karachentsev, Igor D.; Chonis, Taylor S.; Grebel, Eva K.; Forbes, Duncan A.; Romanowsky, Aaron J.; Gallego-Laborda, J.; Teuwen, Karel; Gómez-Flechoso, M. A.; Wang, Jie; Guhathakurta, Puragra; Kaisin, Serafim; Ho, Nhung
2016-04-01
We report the discovery of DGSAT I, an ultra-diffuse, quenched galaxy located 10.°4 in projection from the Andromeda galaxy (M31). This low-surface brightness galaxy (μV = 24.8 mag arcsec-2), found with a small amateur telescope, appears unresolved in sub-arcsecond archival Subaru/Suprime-Cam images, and hence has been missed by optical surveys relying on resolved star counts, in spite of its relatively large effective radius (Re(V) = 12″) and proximity (15‧) to the well-known dwarf spheroidal galaxy And II. Its red color (V - I = 1.0), shallow Sérsic index (nV = 0.68), and the absence of detectable Hα emission are typical properties of dwarf spheroidal galaxies and suggest that it is mainly composed of old stars. Initially interpreted as an interesting case of an isolated dwarf spheroidal galaxy in the local universe, our radial velocity measurement obtained with the BTA 6 m telescope (Vh = 5450 ± 40 km s-1) shows that this system is an M31-background galaxy associated with the filament of the Pisces-Perseus supercluster. At the distance of this cluster (˜78 Mpc), DGSAT I would have an Re ˜ 4.7 kpc and MV ˜ -16.3. Its properties resemble those of the ultra-diffuse galaxies (UDGs) recently discovered in the Coma cluster. DGSAT I is the first case of these rare UDGs found in this galaxy cluster. Unlike the UDGs associated with the Coma and Virgo clusters, DGSAT I is found in a much lower density environment, which provides a fresh constraint on the formation mechanisms for this intriguing class of galaxy.
DISCOVERY OF AN ULTRA-DIFFUSE GALAXY IN THE PISCES-PERSEUS SUPERCLUSTER
DOE Office of Scientific and Technical Information (OSTI.GOV)
Martínez-Delgado, David; Grebel, Eva K.; Läsker, Ronald
We report the discovery of DGSAT I, an ultra-diffuse, quenched galaxy located 10.°4 in projection from the Andromeda galaxy (M31). This low-surface brightness galaxy (μ{sub V} = 24.8 mag arcsec{sup −2}), found with a small amateur telescope, appears unresolved in sub-arcsecond archival Subaru/Suprime-Cam images, and hence has been missed by optical surveys relying on resolved star counts, in spite of its relatively large effective radius (R{sub e}(V) = 12″) and proximity (15′) to the well-known dwarf spheroidal galaxy And II. Its red color (V − I = 1.0), shallow Sérsic index (n{sub V} = 0.68), and the absence of detectable Hα emission aremore » typical properties of dwarf spheroidal galaxies and suggest that it is mainly composed of old stars. Initially interpreted as an interesting case of an isolated dwarf spheroidal galaxy in the local universe, our radial velocity measurement obtained with the BTA 6 m telescope (V{sub h} = 5450 ± 40 km s{sup −1}) shows that this system is an M31-background galaxy associated with the filament of the Pisces-Perseus supercluster. At the distance of this cluster (∼78 Mpc), DGSAT I would have an R{sub e} ∼ 4.7 kpc and M{sub V} ∼ −16.3. Its properties resemble those of the ultra-diffuse galaxies (UDGs) recently discovered in the Coma cluster. DGSAT I is the first case of these rare UDGs found in this galaxy cluster. Unlike the UDGs associated with the Coma and Virgo clusters, DGSAT I is found in a much lower density environment, which provides a fresh constraint on the formation mechanisms for this intriguing class of galaxy.« less
NASA Astrophysics Data System (ADS)
Babayco, Christopher B.; Land, Donald P.; Parikh, Atul N.; Kiehl, Richard A.
2014-09-01
We have devised an infrared spectromicroscopy based experimental configuration to enable structural characterization of buried molecular junctions. Our design utilizes a small mercury drop at the focal point of an infrared microscope to act as a mirror in studying metal-molecule-metal (MmM) junctions. An organic molecular monolayer is formed either directly on the mercury drop or on a thin, infrared (IR) semi-transparent layer of Au deposited onto an IR transparent, undoped silicon substrate. Following the formation of the monolayer, films on either metal can be examined independently using specular reflection spectroscopy. Furthermore, by bringing together the two monolayers, a buried molecular bilayer within the MmM junction can be characterized. Independent examination of each half of the junction prior to junction formation also allows probing any structural and/or conformational changes that occur as a result of forming the bilayer. Because our approach allows assembling and disassembling microscopic junctions by forming and withdrawing Hg drops onto the monolayer covered metal, spatial mapping of junctions can be performed simply by translating the location of the derivatized silicon wafer. Finally, the applicability of this technique for the longer-term studies of changes in molecular structure in the presence of electrical bias is discussed.
Zhou, Cheng-Jie; Wu, Sha-Na; Shen, Jiang-Peng; Wang, Dong-Hui; Kong, Xiang-Wei; Lu, Angeleem; Li, Yan-Jiao; Zhou, Hong-Xia; Zhao, Yue-Fang; Liang, Cheng-Guang
2016-01-01
Cumulus cells are a group of closely associated granulosa cells that surround and nourish oocytes. Previous studies have shown that cumulus cells contribute to oocyte maturation and fertilization through gap junction communication. However, it is not known how this gap junction signaling affects in vivo versus in vitro maturation of oocytes, and their subsequent fertilization and embryonic development following insemination. Therefore, in our study, we performed mouse oocyte maturation and insemination using in vivo- or in vitro-matured oocyte-cumulus complexes (OCCs, which retain gap junctions between the cumulus cells and the oocytes), in vitro-matured, denuded oocytes co-cultured with cumulus cells (DCs, which lack gap junctions between the cumulus cells and the oocytes), and in vitro-matured, denuded oocytes without cumulus cells (DOs). Using these models, we were able to analyze the effects of gap junction signaling on oocyte maturation, fertilization, and early embryo development. We found that gap junctions were necessary for both in vivo and in vitro oocyte maturation. In addition, for oocytes matured in vivo, the presence of cumulus cells during insemination improved fertilization and blastocyst formation, and this improvement was strengthened by gap junctions. Moreover, for oocytes matured in vitro, the presence of cumulus cells during insemination improved fertilization, but not blastocyst formation, and this improvement was independent of gap junctions. Our results demonstrate, for the first time, that the beneficial effect of gap junction signaling from cumulus cells depends on oocyte maturation and fertilization methods.
Syed, Mubarak Hussain; Krudewig, Alice; Engelen, Daniel; Stork, Tobias; Klämbt, Christian
2011-05-25
The blood-brain barrier of Drosophila is established by the subperineurial glial cells that encase the CNS and PNS. The subperineurial glial cells are thin, highly interdigitated cells with epithelial character. The establishment of extensive septate junctions between these cells is crucial for the prevention of uncontrolled paracellular leakage of ions and solutes from the hemolymph into the nervous system. In the absence of septate junctions, macromolecules such as fluorescently labeled dextran can easily cross the blood-brain barrier. To identify additional components of the blood-brain barrier, we followed a genetic approach and injected Texas-Red-conjugated dextran into the hemolymph of embryos homozygous for chromosomal deficiencies. In this way, we identified the 153-aa-large protein Coiled, a new member of the Ly6 (leukocyte antigen 6) family, as being crucially required for septate junction formation and blood-brain barrier integrity. In coiled mutants, the normal distribution of septate junction markers such as NeurexinIV, Coracle, or Discs large is disturbed. EM analyses demonstrated that Coiled is required for the formation of septate junctions. We further show that Coiled is expressed by the subsperineurial glial cells in which it is anchored to the cell membrane via a glycosylphosphatidylinositol anchor and mediates adhesive properties. Clonal rescue studies indicate that the presence of Coiled is required symmetrically on both cells engaged in septate junction formation.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Park, Hugh; Todorov, Stan; Colombeau, Benjamin
2012-11-06
We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less
LRP6 acts as a scaffold protein in cardiac gap junction assembly
Li, Jun; Li, Changming; Liang, Dandan; Lv, Fei; Yuan, Tianyou; The, Erlinda; Ma, Xiue; Wu, Yahan; Zhen, Lixiao; Xie, Duanyang; Wang, Shiyi; Liu, Yuan; Huang, Jian; Shi, Jingyi; Liu, Yi; Shi, Dan; Xu, Liang; Lin, Li; Peng, Luying; Cui, Jianmin; Zhu, Weidong; Chen, Yi-Han
2016-01-01
Low-density lipoprotein receptor-related protein 6 (LRP6) is a Wnt co-receptor in the canonical Wnt/β-catenin signalling. Here, we report the scaffold function of LRP6 in gap junction formation of cardiomyocytes. Cardiac LRP6 is spatially restricted to intercalated discs and binds to gap junction protein connexin 43 (Cx43). A deficiency in LRP6 disrupts Cx43 gap junction formation and thereby impairs the cell-to-cell coupling, which is independent of Wnt/β-catenin signalling. The defect in Cx43 gap junction resulting from LRP6 reduction is attributable to the defective traffic of de novo Cx43 proteins from the endoplasmic reticulum to the Golgi apparatus, leading to the lysosomal degradation of Cx43 proteins. Accordingly, the hearts of conditional cardiac-specific Lrp6-knockout mice consistently exhibit overt reduction of Cx43 gap junction plaques without any abnormality in Wnt signalling and are predisposed to lethal arrhythmias. These findings uncover a distinct role of LRP6 as a platform for intracellular protein trafficking. PMID:27250245
Witkind, I.J.
1954-01-01
formation (Permian) to the Salt Wash member of the Morrison formation (Jurassic), The dominant structural element of the area is the Monument upwarp, a arge asymmetrical anticline whose northern end is near the junction of the Green and Colorado Rivers in Utah, and whose southern end disappears near Kayenta, Ariz. Asymmetrical anticlines with steeply dipping east flanks and gently dipping west flanks are superimposed on the upwarp. These subsidiary structures trend north. The uranium ore bodies are localized in conglomeratic sandstone of the Upper Triassic Shinarump conglomerate that fills channels scoured in the underlying Lower and Middle (?) Triassic Moenkopi formation. These channels range from relatively narrow and shallow ones 15 feet wide and 10 feet deep to much broader and deeper ones 2,300 feet wide and 70 feet deep. Two types of channels can be distinguished-r-a short-type less than 2 miles Iong 5 and a long-type traceable for distances greater than 2 miles Plant matter in the form of trees, branches,'and twigs was deposited with Shinarump sediments in the channels. It is suggested that when the Shinarump conglomerate was invaded by mineralizing solutions the uranium ore was deposited primarily in localities formerly occupied by the plant material. Further, it is suggested that the short channels are more likely to have ore accumulations than long channels.
Development of the ion source for cluster implantation
NASA Astrophysics Data System (ADS)
Kulevoy, T. V.; Seleznev, D. N.; Kozlov, A. V.; Kuibeda, R. P.; Kropachev, G. N.; Alexeyenko, O. V.; Dugin, S. N.; Oks, E. M.; Gushenets, V. I.; Hershcovitch, A.; Jonson, B.; Poole, H. J.
2014-02-01
Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.
Hanes, D.M.; Erikson, L.H.
2013-01-01
Ocean surface gravity waves propagating over shallow bathymetry undergo spatial modification of propagation direction and energy density, commonly due to refraction and shoaling. If the bathymetric variations are significant the waves can undergo changes in their direction of propagation (relative to deepwater) greater than 90° over relatively short spatial scales. We refer to this phenomenon as ultra-refraction. Ultra-refracted swell waves can have a powerful influence on coastal areas that otherwise appear to be sheltered from ocean waves. Through a numerical modeling investigation it is shown that San Francisco Bay, one of the earth's largest and most protected natural harbors, is vulnerable to ultra-refracted ocean waves, particularly southwest incident swell. The flux of wave energy into San Francisco Bay results from wave transformation due to the bathymetry and orientation of the large ebb tidal delta, and deep, narrow channel through the Golden Gate. For example, ultra-refracted swell waves play a critical role in the intermittent closure of the entrance to Crissy Field Marsh, a small restored tidal wetland located on the sheltered north-facing coast approximately 1.5 km east of the Golden Gate Bridge.
Extended defects and hydrogen interactions in ion implanted silicon
NASA Astrophysics Data System (ADS)
Rangan, Sanjay
The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (<650°C) defect dissolution and defect injection dominates, resulting in increased junction depths. At higher anneal temperatures, however, repair dominates over defect injection resulting in shallower junctions. Hydrogenation experiments shows that hydrogen enhances dopant activation and reduces TED at low anneal temperatures (<550°C). At anneal temperatures >550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for along time (300min). Also presented is the recipe for formation of multiple cavity layers and the electrical and optical properties of these cavities. Electrically, these cavities are metastable, with two strong minority carrier peaks formed by multiple defect levels. Photoluminescence measurements reveal a strong 0.8eV photon peak.
60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.
Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping
2015-08-10
We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.
Molecular diodes and ultra-thin organic rectifying junctions: Au-S-CnH2n-Q3CNQ and TCNQ derivatives.
Ashwell, Geoffrey J; Moczko, Katarzyna; Sujka, Marta; Chwialkowska, Anna; Hermann High, L R; Sandman, Daniel J
2007-02-28
Attempts to obtain derivatives of the molecular diode, 2-{4-[1-cyano-2-(1-(omega-acetylsulfanylalkyl)-1H-quinolin-4-ylidene)-ethylidene]-cyclohexa-2,5-dienylidene}-malonitrile [1, CH(3)CO-S-C(n)H(2n)-Q3CNQ], from either 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-p-quinodimethane (TCNQF(4)) or 2,3,5,6-tetramethyl-7,7,8,8-tetracyano-p-quinodimethane (TMTCNQ) result in ring closure via the cyano group of the pi-bridge and yield di-substituted analogues: 2-{2,3,5,6-tetrafluoro-4-[6-(10-acetylsulfanyldecyl)-3-(1-(10-acetylsulfanyldecyl)-1H-quinolin-4-ylidenemethyl)-6H-benzo[f][1,7]naphthyridin-2-ylidene]-cyclohexa-2,5-dienylidene}-malonitrile (2a) and the 2,3,5,6-tetramethyl derivative (2b). Self-assembled monolayers (SAMs) of these donor-(pi-bridge)-acceptor molecular diodes exhibit asymmetric current-voltage characteristics with electron flow at forward bias from the top contact to surface C(CN)(2) groups. Comparison is made with I-V curves from ultra-thin films of an organic rectifying junction in which TCNQ(-) is electron-donating and a donor-(sigma-bridge)-acceptor diode in which TCNQ degrees is electron-accepting.
NASA Astrophysics Data System (ADS)
De Lange, G. J.; Krijgsman, W.
2015-12-01
The Messinian Salinity Crisis (MSC) is a dramatic event that took place ~ 5.9 Ma ago, resulting in deposition of 1-3 km thick evaporites at the Mediterranean seafloor. A considerable, long-lasting controversy existed on the modes of their formation, including the observed shallow gypsum versus deep dolostone deposits for the early phase of MSC. The onset of MSC is marked by deposition of gypsum/sapropel-like alternations, thought to relate to arid/humid climate conditions at a precessional rhythm. Gypsum precipitation only occurred at marginal- and dolomite formation at deeper settings. A range of potential explanations was given, most of which cannot satisfactorily explain all observations. Biogeochemical processes during MSC are commonly neglected but may explain that different deposits formed in shallow vs deep environments without exceptional physical boundary conditions for each. A unifying mechanism is presented in which gypsum formation occurs at all shallow water depths but its preservation is limited to shallow sedimentary settings. In contrast, ongoing deep-basin anoxic organic matter (OM) degradation processes result in dolomite formation. Gypsum precipitation in evaporating seawater takes place at 3-7 times concentrated seawater; seawater is always oversaturated relative to dolomite but its formation is inhibited by the presence of dissolved sulphate. Thus conditions for formation of gypsum exclude those for formation of dolomite and vice versa. Another process linking the saturation states of gypsum and dolomite is that of OM degradation by sulphate reduction. In stagnant deep water, ongoing OM-degradation may result in reducing the sulphate and enhancing the dissolved carbonate content. Such low-sulphate / high carbonate conditions in MSC deepwater are. unfavorable for gypsum preservation and favorable for dolomite formation, and always coincide with anoxic, i.e. oxygen-free conditions. Including dynamic biogeochemical processes in the thusfar static interpretations of evaporite formation mechanisms can thus account for the paradoxal, isochronous formation of shallow gypsum and deep-dolomite during the early MSC (1). (1) De Lange G.J. and Krijgsman W. (2010) Mar. Geol. 275, 273-277
Intercellular ice propagation: experimental evidence for ice growth through membrane pores.
Acker, J P; Elliott, J A; McGann, L E
2001-01-01
Propagation of intracellular ice between cells significantly increases the prevalence of intracellular ice in confluent monolayers and tissues. It has been proposed that gap junctions facilitate ice propagation between cells. This study develops an equation for capillary freezing-point depression to determine the effect of temperature on the equilibrium radius of an ice crystal sufficiently small to grow through gap junctions. Convection cryomicroscopy and video image analysis were used to examine the incidence and pattern of intracellular ice formation (IIF) in the confluent monolayers of cell lines that do (MDCK) and do not (V-79W) form gap junctions. The effect of gap junctions on intracellular ice propagation was strongly temperature-dependent. For cells with gap junctions, IIF occurred in a directed wave-like pattern in 100% of the cells below -3 degrees C. At temperatures above -3 degrees C, there was a marked drop in the incidence of IIF, with isolated individual cells initially freezing randomly throughout the sample. This random pattern of IIF was also observed in the V-79W monolayers and in MDCK monolayers treated to prevent gap junction formation. The significant change in the low temperature behavior of confluent MDCK monolayers at -3 degrees C is likely the result of the inhibition of gap junction-facilitated ice propagation, and supports the theory that gap junctions facilitate ice nucleation between cells. PMID:11509353
Salt-Doped Polymer Light-Emitting Devices
NASA Astrophysics Data System (ADS)
Gautier, Bathilde
Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.
Horiguchi, Kotaro; Kouki, Tom; Fujiwara, Ken; Kikuchi, Motoshi; Yashiro, Takashi
2011-03-01
Folliculo-stellate (FS) cells in the anterior pituitary gland are believed to have multifunctional properties. FS cells connect to each other not only by mechanical means, but also by gap junctional cell-to-cell communication. Using transgenic rats that express green fluorescent protein (GFP) specifically in FS cells in the anterior pituitary gland (S100b-GFP rats), we recently revealed that FS cells in primary culture markedly change their shape, and form numerous interconnections with neighboring FS cells in the presence of laminin, an extracellular matrix (ECM) component of the basement membrane. Morphological and functional changes in cells are believed to be partly modified by matricrine signaling, by which ECM components function as cellular signals. In the present study, we examined whether gap junction formation between FS cells is affected by matricrine cues. A cell sorter was used to isolate FS cells from male S100b-GFP rat anterior pituitary for primary culture. We observed that mRNA and protein levels of connexin 43 in gap junction channels were clearly higher in the presence of laminin. In addition, we confirmed the formation of gap junctions between FS cells in primary culture by electron microscopy. Interestingly, we also observed that FS cells in the presence of laminin displayed well-developed rough endoplasmic reticulum and Golgi apparatus. Our findings suggest that, in anterior pituitary gland, FS cells may facilitate functional roles such as gap junctional cell-to-cell communication by matricrine signaling.
Extant or Absent: Formation Water in New York State Drinking Water Wells
NASA Astrophysics Data System (ADS)
Christian, K.; Lautz, L. K.
2013-12-01
The current moratorium on hydraulic fracturing in New York State (NYS) provides an opportunity to collect baseline shallow groundwater quality data pre-hydraulic fracturing, which is essential for determining the natural variability of groundwater chemistry and to evaluate future claims of impaired groundwater quality if hydraulic fracturing occurs in the State. Concerns regarding the future environmental impact of shale gas extraction in NYS include potential shallow groundwater contamination due to migration of methane or formation water from shale gas extraction sites. Treatment, storage and disposal of saline flowback fluids after gas extraction could also be a source of water contamination. In this study, we combine southern NYS shallow groundwater chemistry data from Project Shale-Water Interaction Forensic Tools (SWIFT, n=60), the National Uranium Resource Evaluation program (NURE, n=684), and the USGS 305(b) Ambient Groundwater Quality Monitoring program (USGS, n=89) to examine evidence of formation water mixing with groundwater using the methodology of Warner et al. (2012). Groundwater characterized as low salinity (<20 mg/L Cl-) accounted for 72% of samples and 28% of samples had high salinity (>20 mg/L Cl-). A plot of bromide versus chloride shows high salinity groundwater samples with Br/Cl ratios >0.0001 fall on the mixing line between low salinity groundwater and Appalachian Basin formation water. Based on the observed linear relationship between bromide and chloride, it appears there is up to 1% formation water mixing with shallow groundwater in the region. The presence of formation water in shallow groundwater would indicate the existence of natural migratory pathways between deep formation wells and shallow groundwater aquifers. A plot of sodium versus chloride also illustrates a linear trend for Type D waters (R^2= 0.776), but the relationship is weaker than that for bromide versus chloride (R^2= 0.924). Similar linear relationships are not observed between other ions and chloride, including Mg, Ca, and Sr. If high salinity groundwater samples from NYS contain small percentages of formation water, we expect linear relationships between chloride and these other, generally conservative ions. The absence of these linear relationships suggests high salinity could be associated with contamination by landfill leachate, septic effluent, road salt, or other potential sources of elevated salt. Future work needs to determine if mixing of shallow groundwater with other potential sources of salinity, such as road deicers, can explain the observed linear relationships. Strontium isotopes from shallow groundwater samples will also be compared to those for NY formation water.
Total internal reflection optical switch using the reverse breakdown of a pn junction in silicon.
Kim, Jong-Hun; Park, Hyo-Hoon
2015-11-01
We demonstrate a new type of silicon total-internal-reflection optical switch with a simple pn junction functioning both as a reflector and a heater. The reflector is placed between asymmetrically y-branched multimode waveguides with an inclination angle corresponding to half of the branch angle. When the reflector is at rest, incident light is reflected in accordance to the refractive index difference due to the plasma dispersion effect of the pre-doped carriers. Switching to the transmission state is attained under a reverse breakdown of the pn junction by the thermo-optic effect which smears the refractive index difference. From this switching scheme, we confirmed the switching operation with a shallow total-internal-reflection region of 1 μm width. At a 6° branch angle, an extinction ratio of 12 dB and an insertion loss of -4.2 dB are achieved along with a thermal heating power of 151.5 mW.
Phosphorus doping a semiconductor particle
Stevens, G.D.; Reynolds, J.S.
1999-07-20
A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.
Phosphorous doping a semiconductor particle
Stevens, Gary Don; Reynolds, Jeffrey Scott
1999-07-20
A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.
Status of silicon solar cell technology
NASA Technical Reports Server (NTRS)
Brandhorst, H. W., Jr.
1976-01-01
Major progress in solar cell technology leading to increased efficiency has occurred since 1970. Technical approaches leading to this increased output include surface texturing, improved antireflection coatings, reduced grid pattern area coverage, shallow junctions and back surface fields. The status of these developments and their incorporation into cell production is discussed. Future research and technology trends leading to further efficiency increases and substantial cost reductions are described.
NASA Astrophysics Data System (ADS)
Warner, N. R.; Darrah, T. H.; Jackson, R. B.; Osborn, S.; Down, A.; Vengosh, A.
2012-12-01
The acceleration in production of natural gas from shale formations through horizontal drilling and hydraulic fracturing has altered the landscape of domestic energy production in the USA. Yet shale gas exploration has generated an increased awareness of risks to drinking water quality amid concerns for the possible migration of stray gas or hydraulic fracturing fluid and/or flowback brine to shallow drinking water aquifers. The degree to which shallow drinking water is at risk from hydraulic fracturing could depend upon the hydraulic connectivity between the shale gas formations and the surface. In this study, we analyzed the geochemistry of over 400 water samples located across six counties of northeastern Pennsylvania in the three principle aquifers, two Upper Devonian Age bedrock aquifers (Catskill and Lock Haven) and one Quaternary Age (Alluvium) that overlie the Marcellus Formation. Based on a detailed analysis of major (Br, Cl, Na, Mg, Ba, and Sr) and trace (Li) element geochemistry, coupled with utilization of a specific spectrum of isotopic tracers (87Sr/86Sr, 228Ra/ 226Ra, 2H/H, 18O/16O), we identify a salinized (Cl> 20 mg/L) shallow groundwater type which suggests conservative mixing relationships between fresh shallow groundwater and an underlying brine. Identification of the brine source is complicated as many of the brines in the northern Appalachian Basin likely share a common origin as the expelled remnants of the formation of the Silurian Salina evaporate deposits. To determine the ultimate source of the diluted brine we compared the observed geochemistry to over 80 brines produced from northern Appalachian Basin formations. The shallow salinized groundwater most closely resembles diluted produced water from the Middle Devonian Marcellus Formation. The 18O/16O and 2H/H of the salinized groundwater indicate that the brine is likely diluted with post-glacial (<10,000 ybp) meteoric water. Combined, these data indicate that hydraulic connections allowed cross formational migration of brine from deeper formations (1-2 kilometers below ground surface) and subsequent dilution. The occurrence of the saline water does not appear to be correlated with the location of shale-gas wells. Also, salinized groundwater with similar major element chemistry was reported prior to the most recent shale-gas development in the region. The source of the salinized water is likely not the recent drilling and hydraulic fracturing; instead brine migrated into the shallow aquifers and was recently diluted through natural pathways and processes. However, the presence of natural hydraulic connections to deeper formations suggests specific structural and hydrodynamic regimes in northeastern Pennsylvania where shallow drinking water resources are at greater risk of contamination, particularly with fugitive gases, during drilling and hydraulic fracturing of shale gas. The severity of the risk could depend upon the presence of pathways that allow the migration of fluids into the shallow aquifers on human time scales.
Warner, Nathaniel R.; Jackson, Robert B.; Darrah, Thomas H.; Osborn, Stephen G.; Down, Adrian; Zhao, Kaiguang; White, Alissa; Vengosh, Avner
2012-01-01
The debate surrounding the safety of shale gas development in the Appalachian Basin has generated increased awareness of drinking water quality in rural communities. Concerns include the potential for migration of stray gas, metal-rich formation brines, and hydraulic fracturing and/or flowback fluids to drinking water aquifers. A critical question common to these environmental risks is the hydraulic connectivity between the shale gas formations and the overlying shallow drinking water aquifers. We present geochemical evidence from northeastern Pennsylvania showing that pathways, unrelated to recent drilling activities, exist in some locations between deep underlying formations and shallow drinking water aquifers. Integration of chemical data (Br, Cl, Na, Ba, Sr, and Li) and isotopic ratios (87Sr/86Sr, 2H/H, 18O/16O, and 228Ra/226Ra) from this and previous studies in 426 shallow groundwater samples and 83 northern Appalachian brine samples suggest that mixing relationships between shallow ground water and a deep formation brine causes groundwater salinization in some locations. The strong geochemical fingerprint in the salinized (Cl > 20 mg/L) groundwater sampled from the Alluvium, Catskill, and Lock Haven aquifers suggests possible migration of Marcellus brine through naturally occurring pathways. The occurrences of saline water do not correlate with the location of shale-gas wells and are consistent with reported data before rapid shale-gas development in the region; however, the presence of these fluids suggests conductive pathways and specific geostructural and/or hydrodynamic regimes in northeastern Pennsylvania that are at increased risk for contamination of shallow drinking water resources, particularly by fugitive gases, because of natural hydraulic connections to deeper formations. PMID:22778445
Warner, Nathaniel R; Jackson, Robert B; Darrah, Thomas H; Osborn, Stephen G; Down, Adrian; Zhao, Kaiguang; White, Alissa; Vengosh, Avner
2012-07-24
The debate surrounding the safety of shale gas development in the Appalachian Basin has generated increased awareness of drinking water quality in rural communities. Concerns include the potential for migration of stray gas, metal-rich formation brines, and hydraulic fracturing and/or flowback fluids to drinking water aquifers. A critical question common to these environmental risks is the hydraulic connectivity between the shale gas formations and the overlying shallow drinking water aquifers. We present geochemical evidence from northeastern Pennsylvania showing that pathways, unrelated to recent drilling activities, exist in some locations between deep underlying formations and shallow drinking water aquifers. Integration of chemical data (Br, Cl, Na, Ba, Sr, and Li) and isotopic ratios ((87)Sr/(86)Sr, (2)H/H, (18)O/(16)O, and (228)Ra/(226)Ra) from this and previous studies in 426 shallow groundwater samples and 83 northern Appalachian brine samples suggest that mixing relationships between shallow ground water and a deep formation brine causes groundwater salinization in some locations. The strong geochemical fingerprint in the salinized (Cl > 20 mg/L) groundwater sampled from the Alluvium, Catskill, and Lock Haven aquifers suggests possible migration of Marcellus brine through naturally occurring pathways. The occurrences of saline water do not correlate with the location of shale-gas wells and are consistent with reported data before rapid shale-gas development in the region; however, the presence of these fluids suggests conductive pathways and specific geostructural and/or hydrodynamic regimes in northeastern Pennsylvania that are at increased risk for contamination of shallow drinking water resources, particularly by fugitive gases, because of natural hydraulic connections to deeper formations.
Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.
Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki
2018-01-01
We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.
Septal Junctions in Filamentous Heterocyst-Forming Cyanobacteria.
Flores, Enrique; Herrero, Antonia; Forchhammer, Karl; Maldener, Iris
2016-02-01
In the filaments of heterocyst-forming cyanobacteria, septal junctions that traverse the septal peptidoglycan join adjacent cells, allowing intercellular communication. Perforations in the septal peptidoglycan have been observed, and proteins involved in the formation of such perforations and putative protein components of the septal junctions have been identified, but their relationships are debated. Copyright © 2015 Elsevier Ltd. All rights reserved.
Binary dislocation junction formation and strength in hexagonal close-packed crystals
Wu, Chi -Chin; Aubry, Sylvie; Arsenlis, Athanasios; ...
2015-12-17
This work examines binary dislocation interactions, junction formation and junction strengths in hexagonal close-packed ( hcp ) crystals. Through a line-tension model and dislocation dynamics (DD) simulations, the interaction and dissociation of different sets of binary junctions are investigated involving one dislocation on the (011¯0) prismatic plane and a second dislocation on one of the following planes: (0001) basal, (11¯00) prismatic, (11¯01) primary pyramidal, or (2¯112) secondary pyramidal. Varying pairs of Burgers vectors are chosen from among the common types the basal type < a > 1/3 < 112¯0 >, prismatic type < c > <0001>, and pyramidal type
Bile duct epithelial tight junctions and barrier function
Rao, R.K.; Samak, G.
2013-01-01
Bile ducts play a crucial role in the formation and secretion of bile as well as excretion of circulating xenobiotic substances. In addition to its secretory and excretory functions, bile duct epithelium plays an important role in the formation of a barrier to the diffusion of toxic substances from bile into the hepatic interstitial tissue. Disruption of barrier function and toxic injury to liver cells appear to be involved in the pathogenesis of a variety of liver diseases such as primary sclerosing cholangitis, primary biliary cirrhosis and cholangiocarcinoma. Although the investigations into understanding the structure and regulation of tight junctions in gut, renal and endothelial tissues have expanded rapidly, very little is known about the structure and regulation of tight junctions in the bile duct epithelium. In this article we summarize the current understanding of physiology and pathophysiology of bile duct epithelium, the structure and regulation of tight junctions in canaliculi and bile duct epithelia and different mechanisms involved in the regulation of disruption and protection of bile duct epithelial tight junctions. This article will make a case for the need of future investigations toward our understanding of molecular organization and regulation of canalicular and bile duct epithelial tight junctions. PMID:24665411
YAP/TAZ regulates sprouting angiogenesis and vascular barrier maturation
Kim, Yoo Hyung; Kim, Jaeryung; Park, Do Young; Bae, Hosung; Lee, Da-Hye; Kim, Kyun Hoo; Hong, Seon Pyo; Jang, Seung Pil; Kwon, Young-Guen; Lim, Dae-Sik
2017-01-01
Angiogenesis is a multistep process that requires coordinated migration, proliferation, and junction formation of vascular endothelial cells (ECs) to form new vessel branches in response to growth stimuli. Major intracellular signaling pathways that regulate angiogenesis have been well elucidated, but key transcriptional regulators that mediate these signaling pathways and control EC behaviors are only beginning to be understood. Here, we show that YAP/TAZ, a transcriptional coactivator that acts as an end effector of Hippo signaling, is critical for sprouting angiogenesis and vascular barrier formation and maturation. In mice, endothelial-specific deletion of Yap/Taz led to blunted-end, aneurysm-like tip ECs with fewer and dysmorphic filopodia at the vascular front, a hyper-pruned vascular network, reduced and disarranged distributions of tight and adherens junction proteins, disrupted barrier integrity, subsequent hemorrhage in growing retina and brain vessels, and reduced pathological choroidal neovascularization. Mechanistically, YAP/TAZ activates actin cytoskeleton remodeling, an important component of filopodia formation and junction assembly. Moreover, YAP/TAZ coordinates EC proliferation and metabolic activity by upregulating MYC signaling. Overall, these results show that YAP/TAZ plays multifaceted roles for EC behaviors, proliferation, junction assembly, and metabolism in sprouting angiogenesis and barrier formation and maturation and could be a potential therapeutic target for treating neovascular diseases. PMID:28805663
Sayedyahossein, Samar; Rudkouskaya, Alena; Leclerc, Valerie; Dagnino, Lina
2016-02-01
A functional permeability barrier is essential to prevent the passage of water and electrolytes, macromolecules, and pathogens through the epidermis. This is accomplished in terminally differentiated keratinocytes through formation of a cornified envelope and the assembly of tight intercellular junctions. Integrin-linked kinase (ILK) is a scaffold protein essential for hair follicle morphogenesis and epidermal attachment to the basement membrane. However, the biological functions of ILK in differentiated keratinocytes remain poorly understood. Furthermore, whether ILK is implicated in keratinocyte differentiation and intercellular junction formation has remained an unresolved issue. Here we describe a pivotal role for ILK in keratinocyte differentiation responses to increased extracellular Ca(2+), regulation of adherens and tight junction assembly, and the formation of an outside-in permeability barrier toward macromolecules. In the absence of ILK, the calcium sensing receptor, E-cadherin, and ZO-1 fail to translocate to the cell membrane, through mechanisms that involve abnormalities in microtubules and in RhoA activation. In situ, ILK-deficient epidermis exhibits reduced tight junction formation and increased outside-in permeability to a dextran tracer, indicating reduced barrier properties toward macromolecules. Therefore, ILK is an essential component of keratinocyte differentiation programs that contribute to epidermal integrity and the establishment of its barrier properties. Copyright © 2015 The Authors. Published by Elsevier Inc. All rights reserved.
Massa, P T; Szuchet, S; Mugnaini, E
1984-12-01
Oligodendrocytes were isolated from lamb brain. Freshly isolated cells and cultured cells, either 1- to 4-day-old unattached or 1- to 5-week-old attached, were examined by thin section and freeze-fracture electron microscopy. Freeze-fracture of freshly isolated oligodendrocytes showed globular and elongated intramembrane particles similar to those previously described in oligodendrocytes in situ. Enrichment of these particles was seen at sites of inter-oligodendrocyte contact. Numerous gap junctions and scattered linear tight junctional arrays were apparent. Gap junctions were connected to blebs of astrocytic plasma membrane sheared off during isolation, whereas tight junctions were facing extracellular space or blebs of oligodendrocytic plasma membrane. Thin sections of cultured, unattached oligodendrocytes showed rounded cell bodies touching one another at points without forming specialized cell junctions. Cells plated on polylysine-coated aclar dishes attached, emanated numerous, pleomorphic processes, and expressed galactocerebroside and myelin basic protein, characteristic markers for oligodendrocytes. Thin sections showed typical oligodendrocyte ultrastructure but also intermediate filaments not present in unattached cultures. Freeze-fracture showed intramembrane particles similar to but more numerous, and with a different fracture face repartition, than those seen in oligodendrocytes, freshly isolated or in situ. Gap junctions were small and rare. Apposed oligodendrocyte plasma membrane formed linear tight junctions which became more numerous with time in culture. Thus, cultured oligodendrocytes isolated from ovine brains develop and maintain features characteristic of mature oligodendrocytes in situ and can be used to explore formation and maintenance of tight junctions and possibly other classes of cell-cell interactions important in the process of myelination.
30 CFR 203.2 - How can I obtain royalty relief?
Code of Federal Regulations, 2010 CFR
2010-07-01
... 203.49). (g) Located in a designated GOM shallow water area Drill and produce gas from an ultra-deep...) Located in a designated GOM deep water area (i.e., 200 meters or greater) and acquired in a lease sale... 203.79). (c) Located in a designated GOM deep water area and acquired in a lease sale held before...
Integrated Assessment of Vegetation and Soil Conditions Following Herbicide Application
2017-07-25
41. The white suspension formed when mixing Remedy Ultra (RU) with water...or shallow soil to a petrocalcic horizon. Soils are well drained and form in loamy calcareous gravelly alluvium. Typical locations for Cho soil are...drained soils. Nuff soil is formed in interbedded marl, limestone, and shale with slopes ranging between 1 and 6%. This soil is formed on erosional
Holographic spectrum-splitting optical systems for solar photovoltaics
NASA Astrophysics Data System (ADS)
Zhang, Deming
Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.
A new structure for comparing surface passivation materials of GaAs solar cells
NASA Technical Reports Server (NTRS)
Desalvo, Gregory C.; Barnett, Allen M.
1989-01-01
The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.
Fluxons and Order in Long Josephson Junctions
1989-02-24
device and also the energies involved. Neglecting demagnetizing effects, the formation 6 of fluxons inside the junction occurs when the external magnetic ...8217 SUPERCONDUCTING ELECTRONICS, FLUXONS; PERIOD DOUBLING BIfURCATION, SINE GORDON EQUATION; NOISE; FLUCTUATIONS 14-) C ’ 9. ABSTRACT (Continue on reverse if...made out of Niobiuny-Nitride and Niobium. Noise and fluctuations measure- ments were performed in the voltage state of the junctions biasedin a magnetic
Drosophila Shaking-B protein forms gap junctions in paired Xenopus oocytes.
Phelan, P; Stebbings, L A; Baines, R A; Bacon, J P; Davies, J A; Ford, C
1998-01-08
In most multicellular organisms direct cell-cell communication is mediated by the intercellular channels of gap junctions. These channels allow the exchange of ions and molecules that are believed to be essential for cell signalling during development and in some differentiated tissues. Proteins called connexins, which are products of a multigene family, are the structural components of vertebrate gap junctions. Surprisingly, molecular homologues of the connexins have not been described in any invertebrate. A separate gene family, which includes the Drosophila genes shaking-B and l(1)ogre, and the Caenorhabditis elegans genes unc-7 and eat-5, encodes transmembrane proteins with a predicted structure similar to that of the connexins. shaking-B and eat-5 are required for the formation of functional gap junctions. To test directly whether Shaking-B is a channel protein, we expressed it in paired Xenopus oocytes. Here we show that Shaking-B localizes to the membrane, and that its presence induces the formation of functional intercellular channels. To our knowledge, this is the first structural component of an invertebrate gap junction to be characterized.
Molecular cell biology and physiology of solute transport
Caplan, Michael J.; Seo-Mayer, Patricia; Zhang, Li
2010-01-01
Purpose of review An enormous body of research has been focused on exploring the mechanisms through which epithelial cells establish their characteristic polarity. It is clear that under normal circumstances cell–cell contacts mediated by the calcium-dependent adhesion proteins of the intercellular adhesion junctions are required to initiate complete polarization. Furthermore, formation of the tight, or occluding, junctions that limit paracellular permeability has long been thought to help to establish polarity by preventing the diffusion of membrane proteins between the two plasmalemmal domains. This review will discuss several selected kinases and protein complexes and highlight their relevance to transporting epithelial cell polarization. Recent findings Recent work has shed new light on the roles of junctional complexes in establishing and maintaining epithelial cell polarity. In addition, work from several laboratories, suggests that the formation of these junctions is tied to processes that regulate cellular energy metabolism. Summary Junctional complexes and energy sensing kinases constitute a novel class of machinery whose capacity to generate and modulate epithelial cell polarity is likely to have wide ranging and important physiological ramifications. PMID:18695392
Rodriguez-Padilla, Julio A.; Hedges, Thomas R.; Monson, Bryan; Srinivasan, Vivek; Wojtkowski, Maciej; Reichel, Elias; Duker, Jay S.; Schuman, Joel S.; Fujimoto, James G.
2007-01-01
Objectives To compare structural changes in the retina seen on high-speed ultra–high-resolution optical coherence tomography (hsUHR-OCT) with multifocal electroretinography (mfERG) and automated visual fields in patients receiving hydroxychloroquine. Methods Fifteen patients receiving hydroxychloroquine were evaluated clinically with hsUHR-OCT, mfERG, and automated visual fields. Six age-matched subjects were imaged with hsUHR-OCT and served as controls. Results Distinctive discontinuity of the perifoveal photoreceptor inner segment/outer segment junction and thinning of the outer nuclear layer were seen with hsUHR-OCT in patients with mild retinal toxic effects. Progression to complete loss of the inner segment/outer segment junction and hyperscattering at the outer segment level were seen in more advanced cases. The mfERG abnormalities correlated with the hsUHR-OCT findings. Asymptomatic patients had normal hsUHR-OCT and mfERG results. Conclusion Distinctive abnormalities in the perifoveal photoreceptor inner segment/outer segment junction were seen on hsUHR-OCT in patients receiving hydroxychloroquine who also were symptomatic and had abnormalities on automated visual fields and mfERG. PMID:17562988
NASA Astrophysics Data System (ADS)
Wong, Dillon
Graphene, a two-dimensional (2D) honeycomb lattice of sp 2-bonded carbon atoms, is renowned for its many extraordinary properties. Not only does it have an extremely high carrier mobility, exceptional mechanical strength, and fascinating optical behavior, graphene additionally has an interesting energy-momentum relationship that is emergent from its space group symmetry. Graphene's low-energy electronic excitations consist of quasiparticles whose energies disperse linearly with wavevector and obey a 2D massless Dirac equation with a modified speed of light. This fortuitous circumstance allows for the exploration of ultra-relativistic phenomena using conventional tabletop techniques common to solid state physics and material science. Here I discuss experiments that probe these ultra-relativistic effects via application of scanning tunneling microscopy (STM) and spectroscopy (STS) to graphene field-effect transistors (FETs) in proximity with charged impurities. The first part of this dissertation focuses on the ultra-relativistic Coulomb problem. Depending on the strength of the potential, the Coulomb problem for massless Dirac particles is divided into two regimes: the subcritical and the supercritical. The subcritical regime is characterized by an electron-hole asymmetry in the local density of states (LDOS) and, unlike in nonrelativistic quantum mechanics, does not support bound states. In contrast, the supercritical regime hosts quasi-bound states that are analogous to "atomic collapse" orbits predicted to occur in atoms with nuclear charge Z > 170. By using an STM tip to directly position calcium (Ca) impurities on a graphene surface, we assembled "artificial nuclei" and observed a transition between the subcritical and supercritical regimes with increasing nuclear charge. We also investigated the screening of these charged impurities by massless Dirac fermions while varying the graphene carrier concentration with an electrostatic gate. The second part of this dissertation focuses on the ultra-relativistic harmonic oscillator. We developed a method for manipulating charged defects inside the boron nitride (BN) substrate underneath graphene to construct circular graphene p-n junctions. These p-n junctions were effectively quantum dots that electrostatically trapped graphene's relativistic charge carriers, and we imaged the interference patterns corresponding to this quantum confinement. The observed energy-level spectra in our p-n junctions closely matched a theoretical spectrum obtained by solving the 2D massless Dirac equation with a quadratic potential, allowing us to identify each observed state with principal and angular momentum quantum numbers. The results discussed here provide insight into fundamental aspects of relativistic quantum mechanics and into graphene properties pertinent to technological applications. In particular, graphene's response to electrostatic potentials determines the scope in which its charge carriers can be directed and harnessed for useful purposes. Furthermore, many of the results contained in this dissertation are expected to generalize to other Dirac materials.
Monolithic pattern-sensitive detector
Berger, Kurt W.
2000-01-01
Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.
NASA Technical Reports Server (NTRS)
Weizer, Victor G.; Fatemi, Navid S.
1991-01-01
An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.
NASA Technical Reports Server (NTRS)
Weizer, Victor G.; Fatemi, Navid S.
1991-01-01
An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.
NASA Technical Reports Server (NTRS)
Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.
2002-01-01
This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.
Photon-detections via probing the switching current shifts of Josephson junctions
NASA Astrophysics Data System (ADS)
Wang, Yiwen; Zhou, Pinjia; Wei, Lianfu; Zhang, Beihong; Wei, Qiang; Zhai, Jiquan; Xu, Weiwei; Cao, Chunhai
2015-08-01
Phenomenally, Cooper pairs can be broken up by external energy and thus the Cooper-pair density in the superconducting electrodes of a Josephson junction (JJ) under radiation can be lowered accordingly. Therefore, by probing the shift of the switching current through the junction, the radiation power absorbed by the superconductors can be detected. Here, we experimentally demonstrate weak optical detections in two types of JJs: Al/AlOx/Al junction (Al-J) and Nb/AlOx/Nb junction (Nb-J), with the superconducting transition temperatures Tc ≈ 1.2K and 6.8 K respectively. The photon-induced switching current shifts are measured at ultra-low temperature (T ≈ 16mK) in order to significantly suppress thermal noises. It is observed that the Al-J has a higher sensitivity than the Nb-J, which is expected since Al has a smaller superconducting gap energy than Nb. The minimum detectable optical powers (at 1550 nm) with the present Al-J and Nb-J are measured as 8 pW and 2 nW respectively, and the noise equivalent power (NEP) are estimated to be 7 ×10-11W /√{ Hz } (for Nb-J) and 3 ×10-12W /√{ Hz } (for Al-J). We also find that the observed switching current responses are dominated by the photon-induced thermal effects. Several methods are proposed to further improve the device sensitivity, so that the JJ based devices can be applicable in photon detections.
NASA Astrophysics Data System (ADS)
Ierodiaconou, Daniel; Schimel, Alexandre C. G.; Kennedy, David; Monk, Jacquomo; Gaylard, Grace; Young, Mary; Diesing, Markus; Rattray, Alex
2018-06-01
Habitat mapping data are increasingly being recognised for their importance in underpinning marine spatial planning. The ability to collect ultra-high resolution (cm) multibeam echosounder (MBES) data in shallow waters has facilitated understanding of the fine-scale distribution of benthic habitats in these areas that are often prone to human disturbance. Developing quantitative and objective approaches to integrate MBES data with ground observations for predictive modelling is essential for ensuring repeatability and providing confidence measures for habitat mapping products. Whilst supervised classification approaches are becoming more common, users are often faced with a decision whether to implement a pixel based (PB) or an object based (OB) image analysis approach, with often limited understanding of the potential influence of that decision on final map products and relative importance of data inputs to patterns observed. In this study, we apply an ensemble learning approach capable of integrating PB and OB Image Analysis from ultra-high resolution MBES bathymetry and backscatter data for mapping benthic habitats in Refuge Cove, a temperate coastal embayment in south-east Australia. We demonstrate the relative importance of PB and OB seafloor derivatives for the five broad benthic habitats that dominate the site. We found that OB and PB approaches performed well with differences in classification accuracy but not discernible statistically. However, a model incorporating elements of both approaches proved to be significantly more accurate than OB or PB methods alone and demonstrate the benefits of using MBES bathymetry and backscatter combined for class discrimination.
Ultra-wide-field fundus autofluorescence in multiple evanescent white dot syndrome.
Hashimoto, Hideaki; Kishi, Shoji
2015-04-01
To observe the progression of affected lesions using ultra-wide-field fundus autofluorescence (FAF) in multiple evanescent white dot syndrome. Retrospective, observational case series. setting: Institutional. 14 eyes of 13 patients (mean age, 35.8 years) with acute disease unilaterally. Patients underwent ultra-wide-field FAF, spectral-domain optical coherence tomography (SD OCT), multifocal electroretinography (mfERG), and Goldmann or automated perimetry; the best-corrected visual acuity (BCVA) and refractive error were measured. Ability of ultra-wide-field FAF to detect lesions with greater sensitivity compared with color fundus photography. Ultra-wide-field FAF imaging enabled improved visualization of the affected lesions and showed that the core lesion was in the posterior fundus involving the peripapillary retina and posterior pole and surrounded by hyper-autofluorescent spots outside the vascular arcade. The posterior lesions expanded rapidly and peripheral spots spread farther peripherally and reached a maximal extent during the acute stage. During follow-up, the peripheral hyper-autofluorescent spots resolved and then hyper-autofluorescence of the posterior fundus gradually faded. SD OCT showed diffuse disruption of the photoreceptor inner segment/outer segment junction (IS/OS) in the posterior fundus during the acute stage. The correlation between the IS/OS abnormality and hyper-autofluorescent areas was unclear. The disrupted IS/OS was restored with normalization of the FAF. Ultra-wide-field FAF showed that the lesions arise from the peripapillary retina and the posterior pole and spread peripherally in a centrifugal manner during the acute stage. The hyper-autofluorescent spots faded from the periphery in a centripetal manner. Copyright © 2015 Elsevier Inc. All rights reserved.
Specific Cx43 phosphorylation events regulate gap junction turnover in vivo
Solan, Joell L.; Lampe, Paul D.
2014-01-01
Gap junctions, composed of proteins from the connexin gene family, are highly dynamic structures that are regulated by kinase-mediated signaling pathways and interactions with other proteins. Phosphorylation of Connexin43 (Cx43) at different sites controls gap junction assembly, gap junction size and gap junction turnover. Here we present a model describing how Akt, mitogen activated protein kinase (MAPK) and src kinase coordinate to regulate rapid turnover of gap junctions. Specifically, Akt phosphorylates Cx43 at S373 eliminating interaction with zona occludens-1 (ZO-1) allowing gap junctions to enlarge. Then MAPK and src phosphorylate Cx43 to initiate turnover. We integrate published data with new data to test and refine this model. Finally, we propose that differential coordination of kinase activation and Cx43 phosphorylation controls the specific routes of disassembly, e.g., annular junction formation or gap junctions can potentially “unzip” and be internalized/endocytosed into the cell that produced each connexin. PMID:24508467
30 CFR 250.244 - What geological and geophysical (G&G) information must accompany the DPP or DOCD?
Code of Federal Regulations, 2010 CFR
2010-07-01
... formations. (e) Shallow hazards report. A shallow hazards report based on information obtained from a high... Supervisor. (f) Shallow hazards assessment. For each proposed well, an assessment of any seafloor and...
NASA Technical Reports Server (NTRS)
Goldman, H.; Wolf, M.
1979-01-01
The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.
Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.
2016-11-21
Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.
Plasmonically enhanced hot electron based photovoltaic device.
Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K
2013-03-25
Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.
NASA Astrophysics Data System (ADS)
Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi
2018-04-01
To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie
2013-01-01
Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774
NASA Astrophysics Data System (ADS)
Provenzano, G.; Vardy, M. E.; Henstock, T.; Zervos, A.
2017-12-01
A quantitative high-resolution physical model of the top 100 meters of the sub-seabed is of key importance for a wide range of shallow geohazard scenarios: identification of potential shallow landsliding, monitoring of gas storage sites, and assessment of offshore structures stability. Cur- rently, engineering-scale sediment characterisation relies heavily on direct sampling of the seabed and in-situ measurements. Such an approach is expensive and time-consuming, as well as liable to alter the sediment properties during the coring process. As opposed to reservoir-scale seismic exploration, ultra-high-frequency (UHF, 0.2-4.0 kHz) multi-channel marine reflection seismic data are most often limited to a to semi-quantitative interpretation of the reflection amplitudes and facies geometries, leaving largely unexploited its intrinsic value as a remote characterisation tool. In this work, we develop a seismic inversion methodology to obtain a robust sub-metric resolution elastic model from limited-offset, limited-bandwidth UHF seismic reflection data, with minimal pre-processing and limited a priori information. The Full Waveform Inversion is implemented as a stochastic optimiser based upon a Genetic Algorithm, modified in order to improve the robustness against inaccurate starting model populations. Multiple independent runs are used to create a robust posterior model distribution and quantify the uncertainties on the solution. The methodology has been applied to complex synthetic examples and to real datasets acquired in areas prone to shallow landsliding. The inverted elastic models show a satisfactory match with the ground-truths and a good sensitivity to relevant variations in the sediment texture and saturation state. We apply the methodology to a range of synthetic consolidating slopes under different loading conditions and sediment properties distributions. Our work demonstrates that the seismic inversion of UHF data has the potential to become an important practical tool for marine ground model building in spatially heterogeneous areas, reducing the reliance on expensive and time-consuming coring campaigns.
2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment
NASA Astrophysics Data System (ADS)
Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav
2018-02-01
PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.
Fracture Mechanisms of Zirconium Diboride Ultra-High Temperature Ceramics under Pulse Loading
NASA Astrophysics Data System (ADS)
Skripnyak, Vladimir V.; Bragov, Anatolii M.; Skripnyak, Vladimir A.; Lomunov, Andrei K.; Skripnyak, Evgeniya G.; Vaganova, Irina K.
2015-06-01
Mechanisms of failure in ultra-high temperature ceramics (UHTC) based on zirconium diboride under pulse loading were studied experimentally by the method of SHPB and theoretically using the multiscale simulation method. The obtained experimental and numerical data are evidence of the quasi-brittle fracture character of nanostructured zirconium diboride ceramics under compression and tension at high strain rates and the room temperatures. Damage of nanostructured porous zirconium diboride -based UHTC can be formed under stress pulse amplitude below the Hugoniot elastic limit. Fracture of nanostructured ultra-high temperature ceramics under pulse and shock-wave loadings is provided by fast processes of intercrystalline brittle fracture and relatively slow processes of quasi-brittle failure via growth and coalescence of microcracks. A decrease of the shear strength can be caused by nano-voids clusters in vicinity of triple junctions between ceramic matrix grains and ultrafine-grained ceramics. This research was supported by grants from ``The Tomsk State University Academic D.I. Mendeleev Fund Program'' and also N. I. Lobachevski State University of Nizhny Novgorod (Grant of post graduate mobility).
30 CFR 250.244 - What geological and geophysical (G&G) information must accompany the DPP or DOCD?
Code of Federal Regulations, 2011 CFR
2011-07-01
... MANAGEMENT, REGULATION, AND ENFORCEMENT, DEPARTMENT OF THE INTERIOR OFFSHORE OIL AND GAS AND SULPHUR... depths of expected productive formations and the locations of proposed wells. (c) Two dimensional (2-D...-sections showing the depths of expected productive formations. (e) Shallow hazards report. A shallow...
Kaplan, Mehmet Mahsum; Sultana, Nasreen; Benedetti, Ariane; Obermair, Gerald J; Linde, Nina F; Papadopoulos, Symeon; Dayal, Anamika; Grabner, Manfred; Flucher, Bernhard E
2018-06-26
Formation of synapses between motor neurons and muscles is initiated by clustering of acetylcholine receptors (AChRs) in the center of muscle fibers prior to nerve arrival. This AChR patterning is considered to be critically dependent on calcium influx through L-type channels (Ca V 1.1). Using a genetic approach in mice, we demonstrate here that either the L-type calcium currents (LTCCs) or sarcoplasmic reticulum (SR) calcium release is necessary and sufficient to regulate AChR clustering at the onset of neuromuscular junction (NMJ) development. The combined lack of both calcium signals results in loss of AChR patterning and excessive nerve branching. In the absence of SR calcium release, the severity of synapse formation defects inversely correlates with the magnitude of LTCCs. These findings highlight the importance of activity-dependent calcium signaling in early neuromuscular junction formation and indicate that both LTCC and SR calcium release individually support proper innervation of muscle by regulating AChR patterning and motor axon outgrowth. Copyright © 2018 The Authors. Published by Elsevier Inc. All rights reserved.
Bioavailability and efficacy of a gap junction enhancer (PQ7) in a mouse mammary tumor model.
Shishido, Stephanie N; Prasain, Keshar; Beck, Amanda; Nguyen, Thi D T; Hua, Duy H; Nguyen, Thu Annelise
2013-01-01
The loss of gap junctional intercellular communication is characteristic of neoplastic cells, suggesting that the restoration with a gap junction enhancer may be a new therapeutic treatment option with less detrimental effects than traditional antineoplastic drugs. A gap junction enhancer, 6-methoxy-8-[(2-furanylmethyl) amino]-4-methyl-5-(3-trifluoromethylphenyloxy) quinoline (PQ7), on the normal tissue was evaluated in healthy C57BL/6J mice in a systemic drug distribution study. Immunoblot analysis of the vital organs indicates a reduction in Cx43 expression in PQ7-treated animals with no observable change in morphology. Next the transgenic strain FVB/N-Tg(MMTV-PyVT) 634Mul/J (also known as PyVT) was used as a spontaneous mammary tumor mouse model to determine the biological and histological effects of PQ7 on tumorigenesis and metastasis at three stages of development: Pre tumor, Early tumor, and Late tumor formation. PQ7 was assessed to have a low toxicity through intraperitoneal administration, with the majority of the compound being detected in the heart, liver, and lungs six hours post injection. The treatment of tumor bearing animals with PQ7 had a 98% reduction in tumor growth, while also decreasing the total tumor burden compared to control mice during the Pre stage of development. PQ7 treatment increased Cx43 expression in the neoplastic tissue during Pre-tumor formation; however, this effect was not observed in Late stage tumor formation. This study shows that the gap junction enhancer, PQ7, has low toxicity to normal tissue in healthy C57BL/6J mice, while having clinical efficacy in the treatment of spontaneous mammary tumors of PyVT mice. Additionally, gap junctional intercellular communication and neoplastic cellular growth are shown to be inversely related, while treatment with PQ7 inhibits tumor growth through targeting gap junction expression.
NASA Astrophysics Data System (ADS)
Palma, Ricardo M.; Kietzmann, Diego A.; Bressan, Graciela S.; Martín-Chivelet, Javier; López-Gómez, José; Farias, María E.; Iglesias Llanos, María P.
2013-11-01
The La Manga Formation consists of marine carbonates and represents most of the sedimentary record of the Callovian-Oxfordian in the Neuquén Basin. Three localities in the southern Mendoza province were studied and their cyclicity was determined by means of facies analysis and their vertical arrangement. Facies of inner ramp, that were deposited in extremely shallow-water environments with intermittent subaerial exposures have been broken down into shallow subtidal, and intertidal-supratidal environments. Shallow subtidal facies are arranged into decimetre scale upward-shallowing cycles composed of marls, laminated or massive mudstones or bioclastic wackestones and intraclastic wackestone-packstones. Intertidal-supratidal centimetre-scale cycles consist of an upward-shallowing succession of restricted facies, overlaid by horizontal or crinkle microbial laminites, flat pebble conglomerates or breccias beds. The defined cycles show a shallowing upward trend in which the evidence of relative sea-level lowering is accepted. The interpretation of Fischer plots allowed the recognition of changes in accommodation space.
Enhanced blue responses in nanostructured Si solar cells by shallow doping
NASA Astrophysics Data System (ADS)
Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho
2018-03-01
Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.
Expanding Actin Rings Zipper the Mouse Embryo for Blastocyst Formation.
Zenker, Jennifer; White, Melanie D; Gasnier, Maxime; Alvarez, Yanina D; Lim, Hui Yi Grace; Bissiere, Stephanie; Biro, Maté; Plachta, Nicolas
2018-04-19
Transformation from morula to blastocyst is a defining event of preimplantation embryo development. During this transition, the embryo must establish a paracellular permeability barrier to enable expansion of the blastocyst cavity. Here, using live imaging of mouse embryos, we reveal an actin-zippering mechanism driving this embryo sealing. Preceding blastocyst stage, a cortical F-actin ring assembles at the apical pole of the embryo's outer cells. The ring structure forms when cortical actin flows encounter a network of polar microtubules that exclude F-actin. Unlike stereotypical actin rings, the actin rings of the mouse embryo are not contractile, but instead, they expand to the cell-cell junctions. Here, they couple to the junctions by recruiting and stabilizing adherens and tight junction components. Coupling of the actin rings triggers localized myosin II accumulation, and it initiates a tension-dependent zippering mechanism along the junctions that is required to seal the embryo for blastocyst formation. Copyright © 2018 Elsevier Inc. All rights reserved.
Neto, Filipa; Klaus-Bergmann, Alexandra; Ong, Yu Ting; Alt, Silvanus; Vion, Anne-Clémence; Szymborska, Anna; Carvalho, Joana R; Hollfinger, Irene; Bartels-Klein, Eireen; Franco, Claudio A
2018-01-01
Formation of blood vessel networks by sprouting angiogenesis is critical for tissue growth, homeostasis and regeneration. How endothelial cells arise in adequate numbers and arrange suitably to shape functional vascular networks is poorly understood. Here we show that YAP/TAZ promote stretch-induced proliferation and rearrangements of endothelial cells whilst preventing bleeding in developing vessels. Mechanistically, YAP/TAZ increase the turnover of VE-Cadherin and the formation of junction associated intermediate lamellipodia, promoting both cell migration and barrier function maintenance. This is achieved in part by lowering BMP signalling. Consequently, the loss of YAP/TAZ in the mouse leads to stunted sprouting with local aggregation as well as scarcity of endothelial cells, branching irregularities and junction defects. Forced nuclear activity of TAZ instead drives hypersprouting and vascular hyperplasia. We propose a new model in which YAP/TAZ integrate mechanical signals with BMP signaling to maintain junctional compliance and integrity whilst balancing endothelial cell rearrangements in angiogenic vessels. PMID:29400648
Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.
Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L
2013-01-01
When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.
NASA Astrophysics Data System (ADS)
Li, Kesai; Gao, Jie; Ju, Xiaodong; Zhu, Jun; Xiong, Yanchun; Liu, Shuai
2018-05-01
This paper proposes a new tool design of ultra-deep azimuthal electromagnetic (EM) resistivity logging while drilling (LWD) for deeper geosteering and formation evaluation, which can benefit hydrocarbon exploration and development. First, a forward numerical simulation of azimuthal EM resistivity LWD is created based on the fast Hankel transform (FHT) method, and its accuracy is confirmed under classic formation conditions. Then, a reasonable range of tool parameters is designed by analyzing the logging response. However, modern technological limitations pose challenges to selecting appropriate tool parameters for ultra-deep azimuthal detection under detectable signal conditions. Therefore, this paper uses grey relational analysis (GRA) to quantify the influence of tool parameters on voltage and azimuthal investigation depth. After analyzing thousands of simulation data under different environmental conditions, the random forest is used to fit data and identify an optimal combination of tool parameters due to its high efficiency and accuracy. Finally, the structure of the ultra-deep azimuthal EM resistivity LWD tool is designed with a theoretical azimuthal investigation depth of 27.42-29.89 m in classic different isotropic and anisotropic formations. This design serves as a reliable theoretical foundation for efficient geosteering and formation evaluation in high-angle and horizontal (HA/HZ) wells in the future.
NASA Astrophysics Data System (ADS)
Shukrinov, Yu. M.; Hamdipour, M.; Kolahchi, M. R.
2009-07-01
Charge formations on superconducting layers and creation of the longitudinal plasma wave in the stack of intrinsic Josephson junctions change crucially the superconducting current through the stack. Investigation of the correlations of superconducting currents in neighboring Josephson junctions and the charge correlations in neighboring superconducting layers allows us to predict the additional features in the current-voltage characteristics. The charge autocorrelation functions clearly demonstrate the difference between harmonic and chaotic behavior in the breakpoint region. Use of the correlation functions gives us a powerful method for the analysis of the current-voltage characteristics of coupled Josephson junctions.
Monocytic cell junction proteins serve important roles in atherosclerosis via the endoglin pathway
Chen, Lina; Chen, Zhongliang; Ge, Menghua; Tang, Oushan; Cheng, Yinhong; Zhou, Haoliang; Shen, Yu; Qin, Fengming
2017-01-01
The formation of atherosclerosis is recognized to be caused by multiple factors including pathogenesis in monocytes during inflammation. The current study provided evidence that monocytic junctions were significantly altered in patients with atherosclerosis, which suggested an association between cell junctions and atherosclerosis. Claudin-1, occludin-1 and ZO-1 were significantly enhanced in atherosclerosis, indicating that the tight junction pathway was activated during the pathogenesis of atherosclerosis. In addition, the gene expression of 5 connexin members involved in the gap junction pathway were quantified, indicating that connexin 43 and 46 were significantly up-regulated in atherosclerosis. Furthermore, inflammatory factors including endoglin and SMAD were observed, suggesting that immune regulative factors were down-regulated in this pathway. Silicon-based analysis additionally identified that connexins and tight junctions were altered in association with monocytic inflammation regulations, endoglin pathway. The results imply that reduced expression of the immune regulation pathway in monocytes is correlated with the generation of gap junctions and tight junctions which serve important roles in atherosclerosis. PMID:28901429
Zhang, Qian; Visser, Eric J. W.; de Kroon, Hans; Huber, Heidrun
2015-01-01
Background and Aims Flooding can occur at any stage of the life cycle of a plant, but often adaptive responses of plants are only studied at a single developmental stage. It may be anticipated that juvenile plants may respond differently from mature plants, as the amount of stored resources may differ and morphological changes can be constrained. Moreover, different water depths may require different strategies to cope with the flooding stress, the expression of which may also depend on developmental stage. This study investigated whether flooding-induced adventitious root formation and plant growth were affected by flooding depth in Solanum dulcamara plants at different developmental stages. Methods Juvenile plants without pre-formed adventitious root primordia and mature plants with primordia were subjected to shallow flooding or deep flooding for 5 weeks. Plant growth and the timing of adventitious root formation were monitored during the flooding treatments. Key Results Adventitious root formation in response to shallow flooding was significantly constrained in juvenile S. dulcamara plants compared with mature plants, and was delayed by deep flooding compared with shallow flooding. Complete submergence suppressed adventitious root formation until up to 2 weeks after shoots restored contact with the atmosphere. Independent of developmental stage, a strong positive correlation was found between adventitious root formation and total biomass accumulation during shallow flooding. Conclusions The potential to deploy an escape strategy (i.e. adventitious root formation) may change throughout a plant’s life cycle, and is largely dependent on flooding depth. Adaptive responses at a given stage of the life cycle thus do not necessarily predict how the plant responds to flooding in another growth stage. As variation in adventitious root formation also correlates with finally attained biomass, this variation may form the basis for variation in resistance to shallow flooding among plants. PMID:26105188
Zhang, Qian; Visser, Eric J W; de Kroon, Hans; Huber, Heidrun
2015-08-01
Flooding can occur at any stage of the life cycle of a plant, but often adaptive responses of plants are only studied at a single developmental stage. It may be anticipated that juvenile plants may respond differently from mature plants, as the amount of stored resources may differ and morphological changes can be constrained. Moreover, different water depths may require different strategies to cope with the flooding stress, the expression of which may also depend on developmental stage. This study investigated whether flooding-induced adventitious root formation and plant growth were affected by flooding depth in Solanum dulcamara plants at different developmental stages. Juvenile plants without pre-formed adventitious root primordia and mature plants with primordia were subjected to shallow flooding or deep flooding for 5 weeks. Plant growth and the timing of adventitious root formation were monitored during the flooding treatments. Adventitious root formation in response to shallow flooding was significantly constrained in juvenile S. dulcamara plants compared with mature plants, and was delayed by deep flooding compared with shallow flooding. Complete submergence suppressed adventitious root formation until up to 2 weeks after shoots restored contact with the atmosphere. Independent of developmental stage, a strong positive correlation was found between adventitious root formation and total biomass accumulation during shallow flooding. The potential to deploy an escape strategy (i.e. adventitious root formation) may change throughout a plant's life cycle, and is largely dependent on flooding depth. Adaptive responses at a given stage of the life cycle thus do not necessarily predict how the plant responds to flooding in another growth stage. As variation in adventitious root formation also correlates with finally attained biomass, this variation may form the basis for variation in resistance to shallow flooding among plants. © The Author 2015. Published by Oxford University Press on behalf of the Annals of Botany Company. All rights reserved. For Permissions, please email: journals.permissions@oup.com.
Articular Cartilage Increases Transition Zone Regeneration in Bone-tendon Junction Healing
Qin, Ling; Lee, Kwong Man; Leung, Kwok Sui
2008-01-01
The fibrocartilage transition zone in the direct bone-tendon junction reduces stress concentration and protects the junction from failure. Unfortunately, bone-tendon junctions often heal without fibrocartilage transition zone regeneration. We hypothesized articular cartilage grafts could increase fibrocartilage transition zone regeneration. Using a goat partial patellectomy repair model, autologous articular cartilage was harvested from the excised distal third patella and interposed between the residual proximal two-thirds bone fragment and tendon during repair in 36 knees. We evaluated fibrocartilage transition zone regeneration, bone formation, and mechanical strength after repair at 6, 12, and 24 weeks and compared them with direct repair. Autologous articular cartilage interposition resulted in more fibrocartilage transition zone regeneration (69.10% ± 14.11% [mean ± standard deviation] versus 8.67% ± 7.01% at 24 weeks) than direct repair at all times. There was no difference in the amount of bone formation and mechanical strength achieved. Autologous articular cartilage interposition increases fibrocartilage transition zone regeneration in bone-tendon junction healing, but additional research is required to ascertain the mechanism of stimulation and to establish the clinical applicability. PMID:18987921
Improved sample preparation and counting techniques for enhanced tritium measurement sensitivity
NASA Astrophysics Data System (ADS)
Moran, J.; Aalseth, C.; Bailey, V. L.; Mace, E. K.; Overman, C.; Seifert, A.; Wilcox Freeburg, E. D.
2015-12-01
Tritium (T) measurements offer insight to a wealth of environmental applications including hydrologic tracking, discerning ocean circulation patterns, and aging ice formations. However, the relatively short half-life of T (12.3 years) limits its effective age dating range. Compounding this limitation is the decrease in atmospheric T content by over two orders of magnitude (from 1000-2000 TU in 1962 to < 10 TU currently) since the cessation of above ground nuclear testing in the 1960's. We are developing sample preparation methods coupled to direct counting of T via ultra-low background proportional counters which, when combined, offer improved T measurement sensitivity (~4.5 mmoles of H2 equivalent) and will help expand the application of T age dating to smaller sample sizes linked to persistent environmental questions despite the limitations above. For instance, this approach can be used to T date ~ 2.2 mmoles of CH4 collected from sample-limited systems including microbial communities, soils, or subsurface aquifers and can be combined with radiocarbon dating to distinguish the methane's formation age from C age in a system. This approach can also expand investigations into soil organic C where the improved sensitivity will permit resolution of soil C into more descriptive fractions and provide direct assessments of the stability of specific classes of organic matter in soils environments. We are employing a multiple step sample preparation system whereby organic samples are first combusted with resulting CO2 and H2O being used as a feedstock to synthesize CH4. This CH4 is mixed with Ar and loaded directly into an ultra-low background proportional counter for measurement of T β decay in a shallow underground laboratory. Analysis of water samples requires only the addition of geologic CO2 feedstock with the sample for methane synthesis. The chemical nature of the preparation techniques enable high sample throughput with only the final measurement requiring T decay with total sample analysis time ranging from 2 -5 weeks depending on T content.
Improving OBS operations in ultra-deep ocean during the Southern Mariana Trench expeditions
NASA Astrophysics Data System (ADS)
Zeng, X.; Lin, J.; Xu, M.; Zhou, Z.
2017-12-01
The Mariana Trench Research Initiative, led by the South China Sea Institute of Oceanology of the Chinese Academy of Sciences and through international collaboration, focuses on investigating the deep and shallow lithospheric structure, earthquake characteristics, extreme geological environments, and the controlling geodynamic mechanisms for the formation of Earth's deepest basins in the southern Mariana Trench. Two multidisciplinary research expeditions were executed during December 2016 and June 2017, respectively, on board R/V Shiyan 3. A main task of the Mariana Initiative is to conduct the Southern Mariana OBS Experiment (SMOE), the first OBS seismic experiment across the Challenger Deep. The SMOE expeditions include both active and passive source seismic experiments and employed a large number of broadband OBS instruments. Due to the deep water, rough weather, strong winds, and other unfavorable factors, it was challenging to deploy/recover the OBSs. During the two expeditions we developed and experimented with a number of ways to improve the success rate of OBS operations in the harsh ultra-deep ocean environment of the Southern Mariana Trench. All newly acquired OBSs underwent a series of uniquely designed deep-ocean tests to improve the instrument performance and maximize reliability during their deployment under the ultra-high pressure conditions. The OBS deployment and recovery followed a unified standard operation procedure and aided by an instrumental checklist, which were specifically designed and strictly enforced for operation during the expeditions. Furthermore, an advanced ship-based radio positioning system was developed to rapidly and accurately locate the OBS instruments when they reached the sea surface; the system proved its effectiveness even under extreme weather conditions. Through the development and application of the novel methods for operation in deep oceans, we overcame the rough sea and other unfavorable factors during the first two expeditions to the southern Mariana Trench and achieved a highly successful OBS operation program.
Efficiency and weight of voltage multiplier type ultra lightweight dc-dc converters
NASA Technical Reports Server (NTRS)
Harrigill, W. T., Jr.; Myers, I. T.
1975-01-01
An analytical and experimental study was made of a capacitor-diode voltage multiplier without a transformer which offers the possibility of high efficiency with light weight. The dc-dc conversion efficiencies of about 94 percent were achieved at output powers of 150 watts at 1000 volts using 8x multiplication. A detailed identification of losses was made, including forward drop losses in component, switching losses, reverse junction capacitance charging losses, and charging losses in the main ladder capacitors.
2017-12-11
provides ultra-low energy search operations. To improve throughput, the in-array pipeline scheme has been developed, allowing the MeTCAM to operate at a...controlled magnetic tunnel junction (VC-MTJ), which not only reduces cell area (thus achieving higher density) but also eliminates standby energy . This...Variations of the cell design are presented and evaluated. The results indicated a potential 90x improvement in the energy efficiency and a 50x
Germanium-Source Tunnel Field Effect Transistors for Ultra-Low Power Digital Logic
2012-05-10
carrier injection via band-to-band tunneling (BTBT) and the absence of thermal (kT) dependence allows for the subthreshold swing to be steeper than... tunneling probability was derived by Kane using time- dependent perturbation theory and Fermi’s Golden Rule [8-9]. This section will instead employ a...be based on tunneling across a reverse- biased p-n junction as shown in Fig. 2.2. In order to obtain a closed form solution of the BTBT
Strale, Pierre-Olivier; Duchesne, Laurence; Peyret, Grégoire; Montel, Lorraine; Nguyen, Thao; Png, Evelyn; Tampé, Robert; Troyanovsky, Sergey; Hénon, Sylvie; Ladoux, Benoit
2015-01-01
Oligomerization of cadherins could provide the stability to ensure tissue cohesion. Cadherins mediate cell–cell adhesion by forming trans-interactions. They form cis-interactions whose role could be essential to stabilize intercellular junctions by shifting cadherin clusters from a fluid to an ordered phase. However, no evidence has been provided so far for cadherin oligomerization in cellulo and for its impact on cell–cell contact stability. Visualizing single cadherins within cell membrane at a nanometric resolution, we show that E-cadherins arrange in ordered clusters, providing the first demonstration of the existence of oligomeric cadherins at cell–cell contacts. Studying the consequences of the disruption of the cis-interface, we show that it is not essential for adherens junction formation. Its disruption, however, increased the mobility of junctional E-cadherin. This destabilization strongly affected E-cadherin anchoring to actin and cell–cell rearrangement during collective cell migration, indicating that the formation of oligomeric clusters controls the anchoring of cadherin to actin and cell–cell contact fluidity. PMID:26195669
Shodo, Ryusuke; Hayatsu, Manabu; Koga, Daisuke; Horii, Arata; Ushiki, Tatsuo
2017-01-01
In the cochlea, a high K + environment in the endolymph is essential for the maintenance of normal hearing function, and the transport of K + ions through gap junctions of the cochlear epithelium is thought to play an important role in endolymphatic homeostasis. The aim of the present study was to demonstrate the three-dimensional (3D) ultrastructure of spiral ligament root cells and interdental cells, which are located at both ends of the gap junction system of the cochlea epithelium. Serial semi-thin sections of plastic-embedded rat cochlea were mounted on glass slides, stained with uranyl acetate and lead citrate, and observed by scanning electron microscopy (SEM) using the backscattered electron (BSE) mode. 3D reconstruction of BSE images of serial sections revealed that the root cells were linked together to form a branched structure like an elaborate "tree root" in the spiral ligament. The interdental cells were also connected to each other, forming a comb-shaped cellular network with a number of cellular strands in the spiral limbus. Furthermore, TEM studies of ultra-thin sections revealed the rich presence of gap junctions in both root cells and interdental cells. These findings suggest the possibility that both root cells and interdental cells contribute to K + circulation as the end portion of the epithelial cell gap junction system of the cochlea.
Kusky, Timothy M.
1997-01-01
The Mesozoic accretionary wedge of south-central Alaska is cut by an array of faults including dextral and sinistral strike-slip faults, synthetic and antithetic thrust faults, and synthetic and antithetic normal faults. The three fault sets are characterized by quartz ± calcite ± chlorite ± prehnite slickensides, and are all relatively late, i.e. all truncate ductile fabrics of the host rocks. Cross-cutting relationships suggest that the thrust fault sets predate the late normal and strike-slip fault sets. Together, the normal and strike-slip fault system exhibits orthorhombic symmetry. Thrust faulting shortened the wedge subhorizontally perpendicular to strike, and then normal and strike-slip faulting extended the wedge oblique to orogenic strike. Strongly curved slickenlines on some faults of each set reveal that displacement directions changed over time. On dip-slip faults (thrust and normal), slickenlines tend to become steeper with younger increments of slip, whereas on strike-slip faults, slickenlines become shallower with younger strain increments. These patterns may result from progressive exhumation of the accretionary wedge while the faults were active, with the curvature of the slickenlines tracking the change from a non-Andersonian stress field at depth to a more Andersonian system (σ1 or σ2 nearly vertical) at shallower crustal levels.We interpret this complex fault array as a progressive deformation that is one response to Paleocene-Eocene subduction of the Kula-Farallon spreading center beneath the accretionary complex because: (1) on the Kenai Peninsula, ENE-striking dextral faults of this array exhibit mutually cross-cutting relationships with Paleocene-Eocene dikes related to ridge subduction; and (2) mineralized strike-slip and normal faults of the orthorhombic system have yielded 40Ar/39Ar ages identical to near-trench intrusives related to ridge subduction. Both features are diachronous along-strike, having formed at circa 65 Ma in the west and 50 Ma in the east. Exhumation of deeper levels of the southern Alaska accretionary wedge and formation of this late fault array is interpreted as a critical taper adjustment to subduction of progressively younger oceanic lithosphere yielding a shallower basal de´collement dip as the Kula-Farallon ridge approached the accretionary prism. The late structures also record different kinematic regimes associated with subduction of different oceanic plates, before and after ridge subduction. Prior to triple junction passage, subduction of the Farallon plate occurred at nearly right angles to the trench axis, whereas after triple junction migration, subduction of the Kula plate involved a significant component of dextral transpression and northward translation of the Chugach terrane. The changes in kinematics are apparent in the sequence of late structures from: (1) thrusting; (2) near-trench plutonism associated with normal + strike-slip faulting; (3) very late gouge-filled dextral faults.
Performance comparison between p–i–n and p–n junction tunneling field-effect transistors
NASA Astrophysics Data System (ADS)
Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man
2018-06-01
In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.
Gap junction-mediated intercellular communication in the immune system.
Neijssen, Joost; Pang, Baoxu; Neefjes, Jacques
2007-01-01
Immune cells are usually considered non-attached blood cells, which would exclude the formation of gap junctions. This is a misconception since many immune cells express connexin 43 (Cx43) and other connexins and are often residing in tissue. The role of gap junctions is largely ignored by immunologists as is the immune system in the field of gap junction research. Here, the current knowledge of the distribution of connexins and the function of gap junctions in the immune system is discussed. Gap junctions appear to play many roles in antibody productions and specific immune responses and may be important in sensing danger in tissue by the immune system. Gap junctions not only transfer electrical and metabolical but also immunological information in the form of peptides for a process called cross-presentation. This is essential for proper immune responses to viruses and possibly tumours. Until now only 40 research papers on gap junctions in the immune system appeared and this will almost certainly expand with the increased mutual interest between the fields of immunology and gap junction research.
Could the United States Afford to Lose a Major Port?
2013-12-13
Diving TEU Twenty-Foot Equivalent Units TRIA Terrorism Risk Insurance Act TSA Transportation Security Administration ULCC Ultra Large Crude...harbor or port. The United States Navy Office of the Supervisor of Salvage and Diving (SupSalv) directed the National Academies’ Marine Board...shipping vessels might be able to navigate around the wreck if they have a shallow enough draft. This research will investigate how long these
Switchable diode effect in oxygen vacancy-modulated SrTiO3 single crystal
NASA Astrophysics Data System (ADS)
Pan, Xinqiang; Shuai, Yao; Wu, Chuangui; Luo, Wenbo; Sun, Xiangyu; Zeng, Huizhong; Bai, Xiaoyuan; Gong, Chaoguan; Jian, Ke; Zhang, Lu; Guo, Hongliang; Tian, Benlang; Zhang, Wanli
2017-09-01
SrTiO3 (STO) single crystal wafer was annealed in vacuum, and co-planar metal-insulator-metal structure of Pt/Ti/STO/Ti/Pt were formed by sputtering Pt/Ti electrodes onto the surface of STO after annealing. The forming-free resistive switching behavior with self-compliance property was observed in the sample. The sample showed switchable diode effect, which is explained by a simple model that redistribution of oxygen vacancies (OVs) under the external electric field results in the formation of n-n+ junction or n+-n junction (n donated n-type semiconductor; n+ donated heavily doped n-type semiconductor). The self-compliance property is also interpreted by the formation of n-n+/n+-n junction caused by the migration of the OVs under the electric field.
The Marinoan 17O depletion (MOSD) event: New data from northern Baltica
NASA Astrophysics Data System (ADS)
Rice, A. Hugh N.; Bao, Huiming; Pen, Yongbo
2017-04-01
The occurrence of sedimentary barite crystal fans during the aftermath of Marinoan glaciation at 635 million years ago (Ma) has been recognized as a global phenomenon. They have been found so far in South China, West Africa, Laurentia, and Central Australia. Their uniqueness is not only reflected in their morphological features, which appear to have occurred only once in the entire Earth's sedimentary record, but also their non-mass-dependently 17O-depleted oxygen isotope compositions that have provided the strongest support to an ultra-high pCO2 post-Marinoan atmosphere and therefore the Snowball Earth theory. The proposed formation model for the barite fans is that they formed in shallow oceans relatively close to the continent where sulfate influx from oxidative weathering was a significant component and where deep water upwelling brought Ba2+. Here we present an example from East Finnmark, in N. Norway, that also supports this formation model, but with a set of distinctive paleogeographic, sedimentary, and stable isotope features. While growing on or inside cavities of a horizontally deposited cap carbonates in most other sites, barite fans grew either directly on a very uneven end-Cryogenian glaciated crystalline Archean basement surface or on a few centimeters of post-glacial Nyborg Formation sediments in northern Baltica block in today's East Finnmark. The fans have been found occurring only in the Ruossoaivi-Lappaluokoaivi area, immediately west of Varangerfjord; they have not been found at any other outcrops of the Smalfjord or Nyborg formations. Deposition was likely in a tidal or very shallow marine environment. Fans are generally less than 2 cm thick, lie within a dominantly carbonate matrix and are, in some cases, overlain by sandstones. No direct relationships between the barite fans and the cap dolostone have been found. Analysis of 10 samples gave Δ17O values ranging from -0.36‰ to - 1.08‰. The northern Baltica barite fans are probably the closest to a paleo-continent among all the known occurrences worldwide, which is also consistent with their 17O anomalies being the highest (∆17O value down to -1.08‰) among all known marine barite fans. The variable ∆17O, δ18O, and δ34S values of these newly discovered barite fans fit the global distribution and represents the first Marinoan 17O depletion (MOSD) record from the Baltica Block.
Connell, Jennifer Petsche; Augustini, Emily; Moise, Kenneth J; Johnson, Anthony; Jacot, Jeffrey G
2013-01-01
Amniotic fluid-derived stem cells (AFSC) have been reported to differentiate into cardiomyocyte-like cells and form gap junctions when directly mixed and cultured with neonatal rat ventricular myocytes (NRVM). This study investigated whether or not culture of AFSC on the opposite side of a Transwell membrane from NRVM, allowing for contact and communication without confounding factors such as cell fusion, could direct cardiac differentiation and enhance gap junction formation. Results were compared to shared media (Transwell), conditioned media and monoculture media controls. After a 2-week culture period, AFSC did not express cardiac myosin heavy chain or troponin T in any co-culture group. Protein expression of cardiac calsequestrin 2 was up-regulated in direct transmembrane co-cultures and media control cultures compared to the other experimental groups, but all groups were up-regulated compared with undifferentiated AFSC cultures. Gap junction communication, assessed with a scrape-loading dye transfer assay, was significantly increased in direct transmembrane co-cultures compared to all other conditions. Gap junction communication corresponded with increased connexin 43 gene expression and decreased phosphorylation of connexin 43. Our results suggest that direct transmembrane co-culture does not induce cardiomyocyte differentiation of AFSC, though calsequestrin expression is increased. However, direct transmembrane co-culture does enhance connexin-43-mediated gap junction communication between AFSC. PMID:23634988
Myosin-X functions in polarized epithelial cells
Liu, Katy C.; Jacobs, Damon T.; Dunn, Brian D.; Fanning, Alan S.; Cheney, Richard E.
2012-01-01
Myosin-X (Myo10) is an unconventional myosin that localizes to the tips of filopodia and has critical functions in filopodia. Although Myo10 has been studied primarily in nonpolarized, fibroblast-like cells, Myo10 is expressed in vivo in many epithelia-rich tissues, such as kidney. In this study, we investigate the localization and functions of Myo10 in polarized epithelial cells, using Madin-Darby canine kidney II cells as a model system. Calcium-switch experiments demonstrate that, during junction assembly, green fluorescent protein–Myo10 localizes to lateral membrane cell–cell contacts and to filopodia-like structures imaged by total internal reflection fluorescence on the basal surface. Knockdown of Myo10 leads to delayed recruitment of E-cadherin and ZO-1 to junctions, as well as a delay in tight junction barrier formation, as indicated by a delay in the development of peak transepithelial electrical resistance (TER). Although Myo10 knockdown cells eventually mature into monolayers with normal TER, these monolayers do exhibit increased paracellular permeability to fluorescent dextrans. Importantly, knockdown of Myo10 leads to mitotic spindle misorientation, and in three-dimensional culture, Myo10 knockdown cysts exhibit defects in lumen formation. Together these results reveal that Myo10 functions in polarized epithelial cells in junction formation, regulation of paracellular permeability, and epithelial morphogenesis. PMID:22419816
Pang, Zunyu; Li, Ming; Yu, Dongshuai; Yan, Zhang; Liu, Xinyi; Ji, Xinglai; Yang, Yang; Hu, Jiansheng; Luo, Kaijun
2015-09-01
Insect cellular immune responses include encapsulation, nodule formation, and phagocytosis. Hemichannels and gap junctions are involved in these cellular actions. Innexins (Inxs: analogous to the vertebrate connexins) form hemichannels and gap junctions, but the molecular mechanisms underlying their biology is still unclear. In this article, we reported a steady-state level of Inxs (SpliInxs) in hemocytes of Spodoptera litura, which formed nonfunctional hemichannels on the cell surface to maintain normal metabolism. We also reported that two innnexins (SpliInx2 and SpliInx3) were expressed significantly higher in hemocytes compared to other tissues, suggesting that they play important roles in hemocytes. Amino acid analysis found that two cysteine residues in two extracellular loops provided the capability for SpliInx2 and SpliInx3 hemichannels to dock into gap junctions. Western blotting demonstrated that both extracellular and intracellular loops of SpliInx3 and the extracellular loops of SpliInx2 might undergo posttranslational modification during the formation of a steady-state hemichannel. During hemichannel formation, SpliInx2 presented as one isoform, while SpliInx3 presented as three isoforms. These results provide fundamental knowledge for further study of how steady-state levels of SpliInxs are dynamically adjusted to perform cellular immune responses under immune challenge. © 2015 Wiley Periodicals, Inc.
NMOS contact resistance reduction with selenium implant into NiPt silicide
NASA Astrophysics Data System (ADS)
Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.
2012-11-01
A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.
Biswas, Sondip K; Brako, Lawrence; Lo, Woo-Kuen
2014-08-01
The wavy square array junctions are composed of truncated aquaporin-0 (AQP0) proteins typically distributed in the deep cortical and nuclear fibers in wild-type lenses. These junctions may help maintain the narrowed extracellular spaces between fiber cells to minimize light scattering. Herein, we investigate the impact of the cell shape changes, due to abnormal formation of extensive square array junctions, on the lens opacification in the caveolin-1 knockout mice. The cav1-KO and wild-type mice at age 1-22 months were used. By light microscopy examinations, cav1-KO lenses at age 1-18 months were transparent in both cortical and nuclear regions, whereas some lenses older than 18 months old exhibited nuclear cataracts. Scanning EM consistently observed the massive formation of ridge-and-valley membrane surfaces in young fibers at approximately 150 μm deep in all cav1-KO lenses studied. In contrast, the typical ridge-and-valleys were only seen in mature fibers deeper than 400 μm in wild-type lenses. The resulting extensive ridge-and-valleys dramatically altered the overall cell shape in cav1-KO lenses. Remarkably, despite dramatic shape changes, these deformed fiber cells remained intact and made close contact with their neighboring cells. By freeze-fracture TEM, ridge-and-valleys exhibited the typical orthogonal arrangement of 6.6 nm square array intramembrane particles and displayed the narrowed extracellular spaces. Immunofluorescence analysis showed that AQP0 C-terminus labeling was significantly decreased in outer cortical fibers in cav1-KO lenses. However, freeze-fracture immunogold labeling showed that the AQP0 C-terminus antibody was sparsely distributed on the wavy square array junctions, suggesting that the cleavage of AQP0 C-termini might not yet be complete. The cav1-KO lenses with nuclear cataracts showed complete cellular breakdown and large globule formation in the lens nucleus. This study suggests that despite dramatic cell shape changes, the massive formation of wavy square array junctions in intact fibers may provide additional adhesive support for maintaining the narrowed extracellular spaces that are crucial for the transparency of cav1-KO lenses. Copyright © 2014 Elsevier Ltd. All rights reserved.
Circum-Pacific diatomite deposits
DOE Office of Scientific and Technical Information (OSTI.GOV)
North, F.K.
1986-07-01
Deformed diatomites of assured identification are all Oligocene or younger. They are not to be interpreted with oceanic diatom oozes as analogs, nor with California's Monterey Formation as prototype. All examples, apart from the unique Monterey, are deposits of relatively shallow waters at convergent plate or microplate boundaries: in arc-trench gaps or (less importantly) in immediate back-arc belts. Tethyan examples, along a collision boundary, are now slivers in the late stages of external flysch along the fronts of Alpine thrust belts. Circum-Pacific examples, at ocean-continent subduction boundaries, are preserved only on mountainous islands or peninsulas, the uplift (not folding) ofmore » which has protected the diatomites and their overlying evaporites from subduction. The control is tectonic and volcanic, not by water temperature or eustatism. Preserved deposits appear to be restricted to particular segments of the Pacific boundary delineated by Benioff zones having some significant minimum dip. The unique Monterey Formation owes its spectacular development and preservation to the conversion of an arc-trench boundary to a transform boundary, at a triple junction, before the diatomite was deposited. The Monterey's importance as an oil source sediment does not stem from its true diatomite component. Other Circum-Pacific diatomites are of negligible significance to the petroleum geologist, but are potentially minable for other uses in Japan, the Philippines, and Peru, and possibly in Chile.« less
Laval, Monique; Bel, Christophe; Faivre-Sarrailh, Catherine
2008-07-18
A complex of three cell adhesion molecules (CAMs) Neurexin IV(Nrx IV), Contactin (Cont) and Neuroglian (Nrg) is implicated in the formation of septate junctions between epithelial cells in Drosophila. These CAMs are interdependent for their localization at septate junctions and e.g. null mutation of nrx IV or cont induces the mislocalization of Nrg to the baso-lateral membrane. These mutations also result in ultrastructural alteration of the strands of septate junctions and breakdown of the paracellular barrier. Varicose (Vari) and Coracle (Cora), that both interact with the cytoplasmic tail of Nrx IV, are scaffolding molecules required for the formation of septate junctions. We conducted photobleaching experiments on whole living Drosophila embryos to analyze the membrane mobility of CAMs at septate junctions between epithelial cells. We show that GFP-tagged Nrg and Nrx IV molecules exhibit very stable association with septate junctions in wild-type embryos. Nrg-GFP is mislocalized to the baso-lateral membrane in nrx IV or cont null mutant embryos, and displays increased mobile fraction. Similarly, Nrx IV-GFP becomes distributed to the baso-lateral membrane in null mutants of vari and cora, and its mobile fraction is strongly increased. The loss of Vari, a MAGUK protein that interacts with the cytoplasmic tail of Nrx IV, has a stronger effect than the null mutation of nrx IV on the lateral mobility of Nrg-GFP. The strands of septate junctions display a stable behavior in vivo that may be correlated with their role of paracellular barrier. The membrane mobility of CAMs is strongly limited when they take part to the multimolecular complex forming septate junctions. This restricted lateral diffusion of CAMs depends on both adhesive interactions and clustering by scaffolding molecules. The lateral mobility of CAMs is strongly increased in embryos presenting alteration of septate junctions. The stronger effect of vari by comparison with nrx IV null mutation supports the hypothesis that this scaffolding molecule may cross-link different types of CAMs and play a crucial role in stabilizing the strands of septate junctions.
Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages
NASA Astrophysics Data System (ADS)
Pastore, I.; Poplausks, R.; Apsite, I.; Pastare, I.; Lombardi, F.; Erts, D.
2011-06-01
Formation of ultrathin anodised aluminium oxide (AAO) membranes with high aspect ratio by Al anodization in sulphuric and oxalic acids at low potentials was investigated. Low anodization potentials ensure slow electrochemical reaction speeds and formation of AAO membranes with pore diameter and thickness below 20 nm and 70 nm respectively. Minimum time necessary for formation of continuous AAO membranes was determined. AAO membrane pore surface was covered with polymer Paraloid B72TM to transport it to the selected substrate. The fabricated ultra thin AAO membranes could be used to fabricate nanodot arrays on different surfaces.
[Kindler syndrome: clinical and ultra-structural particularities, a propos of three cases].
El Fekih, Nadia; Mahfoudh, Anis; Zekri, Samy; Kharfi, Monia; Fazaa, Bécima; Jaafoura, Mohamed Habib; Kamoun, Mohamed Ridha
2011-08-01
Kindler's syndrome is a rare type of genetic skin condition belonging to the class of bullous poikilodermia. We report three new sibling cases of this rare syndrome. The condition was seen in three sisters aged 12, 16 and 20 years, born of a first-degree consanguineous marriage with no family history of Kindler's syndrome. The three patients presented spontaneously regressive bullous eruptions, poikilodermia of gradual onset, major cutaneous atrophy on the back of the hands and the feet, photosensitivity and gingival hypertrophy. Electron microscopy examination of poikilodermic skin showed normal anchoring filaments and intraepidermal cleavage. Diagnosis of Kindler's syndrome is based upon clinical evidence. Kidler's syndrome is a well defined clinical entity. Ultra-structural studies show intraepidermal, junctional, and dermal cleavage. This syndrome must be differentiated from congenital epidermolysis bullosa, Weary's syndrome, and other bullous hereditary poikilodermas. Copyright © 2011 Elsevier Masson SAS. All rights reserved.
Plasma-Enhanced Pulsed Laser Deposition of Wide Bandgap Nitrides for Space Power Applications
NASA Technical Reports Server (NTRS)
Triplett, G. E., Jr.; Durbin, S. M.
2004-01-01
The need for a reliable, inexpensive technology for small-scale space power applications where photovoltaic or chemical battery approaches are not feasible has prompted renewed interest in radioisotope-based energy conversion devices. Although a number of devices have been developed using a variety of semiconductors, the single most limiting factor remains the overall lifetime of the radioisotope battery. Recent advances in growth techniques for ultra-wide bandgap III-nitride semiconductors provide the means to explore a new group of materials with the promise of significant radiation resistance. Additional benefits resulting from the use of ultra-wide bandgap materials include a reduction in leakage current and higher operating voltage without a loss of energy transfer efficiency. This paper describes the development of a novel plasma-enhanced pulsed laser deposition system for the growth of cubic boron nitride semiconducting thin films, which will be used to construct pn junction devices for alphavoltaic applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Venkadesh, S.; Mandal, P.K.; Gautham, N., E-mail: n_gautham@hotmail.com
Highlights: {yields} This is the first crystal structure of a four-way junction with sticky ends. {yields} Four junction structures bind to each other and form a rhombic cavity. {yields} Each rhombus binds to others to form 'infinite' 2D tiles. {yields} This is an example of bottom-up fabrication of a DNA nano-lattice. -- Abstract: We report here the crystal structure of the partially self-complementary decameric sequence d(CGGCGGCCGC), which self assembles to form a four-way junction with sticky ends. Each junction binds to four others through Watson-Crick base pairing at the sticky ends to form a rhombic structure. The rhombuses bind tomore » each other and form two dimensional tiles. The tiles stack to form the crystal. The crystal diffracted in the space group P1 to a resolution of 2.5 A. The junction has the anti-parallel stacked-X conformation like other junction structures, though the formation of the rhombic net noticeably alters the details of the junction geometry.« less
Influence of TiO2(110) surface roughness on growth and stability of thin organic films.
Szajna, K; Kratzer, M; Wrana, D; Mennucci, C; Jany, B R; Buatier de Mongeot, F; Teichert, C; Krok, F
2016-10-14
We have investigated the growth and stability of molecular ultra-thin films, consisting of rod-like semiconducting para-hexaphenyl (6P) molecules vapor deposited on ion beam modified TiO 2 (110) surfaces. The ion bombarded TiO 2 (110) surfaces served as growth templates exhibiting nm-scale anisotropic ripple patterns with controllable parameters, like ripple depth and length. In turn, by varying the ripple depth one can tailor the average local slope angle and the local step density/terrace width of the stepped surface. Here, we distinguish three types of substrates: shallow, medium, and deep rippled surfaces. On these substrates, 6P sub-monolayer deposition was carried out in ultra-high vacuum by organic molecular beam evaporation (OMBE) at room temperature leading to the formation of islands consisting of upright standing 6P molecules, which could be imaged by scanning electron microscopy and atomic force microscopy (AFM). It has been found that the local slope and terrace width of the TiO 2 template strongly influences the stability of OMBE deposited 6P islands formed on the differently rippled substrates. This effect is demonstrated by means of tapping mode AFM, where an oscillating tip was used as a probe for testing the stability of the organic structures. We conclude that by increasing the local slope of the TiO 2 (110) surface the bonding strength between the nearest neighbor standing molecules is weakened due to the presence of vertical displacement in the molecular layer in correspondence to the TiO 2 atomic step height.
New high-efficiency silicon solar cells
NASA Technical Reports Server (NTRS)
Daud, T.; Crotty, G. T.
1985-01-01
A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.
NASA Astrophysics Data System (ADS)
Yatskiv, R.; Grym, J.
2018-03-01
We show that the interaction between graphite and polar surfaces of ZnO affects electrical properties of graphite/ZnO Schottky junctions. A strong interaction of the Zn-face with the graphite contact causes interface imperfections and results in the formation of laterally inhomogeneous Schottky contacts. On the contrary, high quality Schottky junctions form on the O-face, where the interaction is significantly weaker. Charge transport through the O-face ZnO/graphite junctions is well described by the thermionic emission model in both forward and reverse directions. We further demonstrate that the parameters of the graphite/ZnO Schottky diodes can be significantly improved when a thin layer of ZnO2 forms at the interface between graphite and ZnO after hydrogen peroxide surface treatment.
Role of the Polarity Determinant Crumbs in Suppressing Mammalian Epithelial Tumor Progression
Karp, Cristina M.; Tan, Ting Ting; Mathew, Robin; Nelson, Deidre; Mukherjee, Chandreyee; Degenhardt, Kurt; Karantza-Wadsworth, Vassiliki; White, Eileen
2009-01-01
Most tumors are epithelial-derived, and although disruption of polarity and aberrant cellular junction formation is a poor prognosticator in human cancer, the role of polarity determinants in oncogenesis is poorly understood. Using in vivo selection, we identified a mammalian orthologue of the Drosophila polarity regulator crumbs as a gene whose loss of expression promotes tumor progression. Immortal baby mouse kidney epithelial (iBMK) cells selected in vivo to acquire tumorigenicity displayed dramatic repression of crumbs3 (crb3) expression associated with disruption of tight junction formation, apicobasal polarity, and contact-inhibited growth. Restoration of crb3 expression restored junctions, polarity and contact inhibition, while suppressing migration and metastasis. These findings suggest a role for mammalian polarity determinants in suppressing tumorigenesis that may be analogous to the well-studied polarity tumor suppressor mechanisms in Drosophila. PMID:18519669
The Reduction of TED in Ion Implanted Silicon
NASA Astrophysics Data System (ADS)
Jain, Amitabh
2008-11-01
The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.
NASA Astrophysics Data System (ADS)
Skemer, P. A.; Cross, A. J.; Bercovici, D.
2016-12-01
(Ultra)mylonites from plate boundary shear zones are characterized by severe grain-size reduction and well-mixed mineral phases. The evolution from relatively undeformed tectonite protoliths to highly deformed (ultra)mylonites via the formation of new grain and phase boundaries is described as microstructural `damage.' Microstructural damage is important for two reasons: grain-size reduction is thought to result in significant rheological weakening, while phase mixing inhibits mechanical recovery and preserves the zone of weakness to be reactivated repeatedly throughout the tectonic cycle. Grain-size reduction by dynamic recrystallization has been studied extensively in both geologic and engineered materials, yet the progressive mixing of mineral phases during high pressure/temperature shear - the other essential element of damage or mylonitization - is not well understood. In this contribution we present new experimental results and theory related to two distinct phase mixing processes. First, we describe high strain torsion experiments on calcite and anhydrite mixtures and a simple geometric mixing model related to the stretching and thinning of monophase domains. Second, we describe a grain-switching mechanism that is driven by the surface-tension driven migration of newly formed interphase triple junctions. Unlike dynamic recrystallization, which occurs at relatively small strains, both phase mixing mechanisms described here appear to require extremely large strains, a prediction that is consistent with geologic observations. These data suggest that ductile shear zones experience long, transient intervals of microstructural evolution during which rheology is not at steady state. Microstructural damage may be interpreted as the product of several interconnected physical processes, which are collectively essential to the preservation of long-lived, Earth-like plate tectonics.
Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission
Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A.
2013-01-01
Summary Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction ‘buds’ suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior. PMID:23591819
Role of heteromeric gap junctions in the cytotoxicity of cisplatin.
Tong, Xuhui; Dong, Shuying; Yu, Meiling; Wang, Qin; Tao, Liang
2013-08-09
In several systems, the presence of gap junctions made of a single connexin has been shown to enhance the cytotoxicity of cisplatin. However, most gap junction channels in vivo appear to be heteromeric (composed of more than one connexin isoform). Here we explore in HeLa cells the cytotoxicity to cisplatin that is enhanced by heteromeric gap junctions composed of Cx26 and Cx32, which have been shown to be more selective among biological permeants than the corresponding homomeric channels. We found that survival and subsequent proliferation of cells exposed to cisplatin were substantially reduced when gap junctions were present than when there were no gap junctions. Functional inhibition of gap junctions by oleamide enhanced survival/proliferation, and enhancement of gap junctions by retinoic acid decreased survival/proliferation. These effects occurred only in high density cultures, and the treatments were without effect when there was no opportunity for gap junction formation. The presence of functional gap junctions enhanced apoptosis as reflected in markers of both early-stage and late-stage apoptosis. Furthermore, analysis of caspases 3, 8 and 9 showed that functional gap junctions specifically induced apoptosis by the mitochondrial pathway. These results demonstrate that heteromeric Cx26/Cx32 gap junctions increase the cytotoxicity of cisplatin by induction of apoptosis via the mitochondrial pathway. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.
Visualizing the effect of dynamin inhibition on annular gap vesicle formation and fission.
Nickel, Beth; Boller, Marie; Schneider, Kimberly; Shakespeare, Teresa; Gay, Vernon; Murray, Sandra A
2013-06-15
Although gap junction plaque assembly has been extensively studied, mechanisms involved in plaque disassembly are not well understood. Disassembly involves an internalization process in which annular gap junction vesicles are formed. These vesicles undergo fission, but the molecular machinery needed for these fissions has not been described. The mechanoenzyme dynamin has been previously demonstrated to play a role in gap junction plaque internalization. To investigate the role of dynamin in annular gap junction vesicle fission, immunocytochemical, time-lapse and transmission electron microscopy were used to analyze SW-13 adrenocortical cells in culture. Dynamin was demonstrated to colocalize with gap junction plaques and vesicles. Dynamin inhibition, by siRNA knockdown or treatment with the dynamin GTPase inhibitor dynasore, increased the number and size of gap junction 'buds' suspended from the gap junction plaques. Buds, in control populations, were frequently released to form annular gap junction vesicles. In dynamin-inhibited populations, the buds were larger and infrequently released and thus fewer annular gap junction vesicles were formed. In addition, the number of annular gap junction vesicle fissions per hour was reduced in the dynamin-inhibited populations. We believe this to be the first report addressing the details of annular gap junction vesicle fissions and demonstrating a role of dynamin in this process. This information is crucial for elucidating the relationship between gap junctions, membrane regulation and cell behavior.
NASA Astrophysics Data System (ADS)
Pawar, R.; Dash, Z.; Sakaki, T.; Plampin, M. R.; Lassen, R. N.; Illangasekare, T. H.; Zyvoloski, G.
2011-12-01
One of the concerns related to geologic CO2 sequestration is potential leakage of CO2 and its subsequent migration to shallow groundwater resources leading to geochemical impacts. Developing approaches to monitor CO2 migration in shallow aquifer and mitigate leakage impacts will require improving our understanding of gas phase formation and multi-phase flow subsequent to CO2 leakage in shallow aquifers. We are utilizing an integrated approach combining laboratory experiments and numerical simulations to characterize the multi-phase flow of CO2 in shallow aquifers. The laboratory experiments involve a series of highly controlled experiments in which CO2 dissolved water is injected in homogeneous and heterogeneous soil columns and tanks. The experimental results are used to study the effects of soil properties, temperature, pressure gradients and heterogeneities on gas formation and migration. We utilize the Finite Element Heat and Mass (FEHM) simulator (Zyvoloski et al, 2010) to numerically model the experimental results. The numerical models capture the physics of CO2 exsolution, multi-phase fluid flow as well as sand heterogeneity. Experimental observations of pressure, temperature and gas saturations are used to develop and constrain conceptual models for CO2 gas-phase formation and multi-phase CO2 flow in porous media. This talk will provide details of development of conceptual models based on experimental observation, development of numerical models for laboratory experiments and modelling results.
Gustavsson, Peter; Förster, Alisa; Hofmeister, Wolfgang; Wincent, Josephine; Zachariadis, Vasilios; Anderlid, Britt-Marie; Nordgren, Ann; Mäkitie, Outi; Wirta, Valtteri; Käller, Max; Vezzi, Francesco; Lupski, James R; Nordenskjöld, Magnus; Lundberg, Elisabeth Syk; Carvalho, Claudia M. B.; Lindstrand, Anna
2016-01-01
Most balanced translocations are thought to result mechanistically from non-homologous endjoining (NHEJ) or, in rare cases of recurrent events, by nonallelic homologous recombination (NAHR). Here, we use low coverage mate pair whole genome sequencing to fine map rearrangement breakpoint junctions in both phenotypically normal and affected translocation carriers. In total, 46 junctions from 22 carriers of balanced translocations were characterized. Genes were disrupted in 48% of the breakpoints; recessive genes in four normal carriers and known dominant intellectual disability genes in three affected carriers. Finally, seven candidate disease genes were disrupted in five carriers with neurocognitive disabilities (SVOPL, SUSD1, TOX, NCALD, SLC4A10) and one XX-male carrier with Tourette syndrome (LYPD6, GPC5). Breakpoint junction analyses revealed microhomology and small templated insertions in a substantive fraction of the analyzed translocations (17.4%; n=4); an observation that was substantiated by reanalysis of 37 previously published translocation junctions. Microhomology associated with templated-insertions is a characteristic seen in the breakpoint junctions of rearrangements mediated by the error prone replication-based repair mechanisms (RBMs). Our data implicate that a mechanism involving template switching might contribute to the formation of at least 15% of the interchromosomal translocation events. PMID:27862604
Neuronal Target Identification Requires AHA-1-Mediated Fine-Tuning of Wnt Signaling in C. elegans
Zhang, Jingyan; Li, Xia; Jevince, Angela R.; Guan, Liying; Wang, Jiaming; Hall, David H.; Huang, Xun; Ding, Mei
2013-01-01
Electrical synaptic transmission through gap junctions is a vital mode of intercellular communication in the nervous system. The mechanism by which reciprocal target cells find each other during the formation of gap junctions, however, is poorly understood. Here we show that gap junctions are formed between BDU interneurons and PLM mechanoreceptors in C. elegans and the connectivity of BDU with PLM is influenced by Wnt signaling. We further identified two PAS-bHLH family transcription factors, AHA-1 and AHR-1, which function cell-autonomously within BDU and PLM to facilitate the target identification process. aha-1 and ahr-1 act genetically upstream of cam-1. CAM-1, a membrane-bound receptor tyrosine kinase, is present on both BDU and PLM cells and likely serves as a Wnt antagonist. By binding to a cis-regulatory element in the cam-1 promoter, AHA-1 enhances cam-1 transcription. Our study reveals a Wnt-dependent fine-tuning mechanism that is crucial for mutual target cell identification during the formation of gap junction connections. PMID:23825972
Fluid displacement during droplet formation at microfluidic flow-focusing junctions.
Huang, Haishui; He, Xiaoming
2015-11-07
Microdroplets and microcapsules have been widely produced using microfluidic flow-focusing junctions for biomedical and chemical applications. However, the multiphase microfluidic flow at the flow-focusing junction has not been well investigated. In this study, the displacement of two (core and shell) aqueous fluids that disperse into droplets altogether in a carrier oil emulsion was investigated both numerically and experimentally. It was found that extensive displacement of the two aqueous fluids within the droplet during its formation could occur as a result of the shear effect of the carrier fluid and the capillary effect of interfacial tension. We further identified that the two mechanisms of fluid displacement can be evaluated by two dimensionless parameters. The quantitative relationship between the degree of fluid displacement and these two dimensionless parameters was determined experimentally. Finally, we demonstrated that the degree of fluid displacement could be controlled to generate hydrogel microparticles of different morphologies using planar or nonplanar flow-focusing junctions. These findings should provide useful guidance to the microfluidic production of microscale droplets or capsules for various biomedical and chemical applications.
Irion, Uwe; Frohnhöfer, Hans Georg; Krauss, Jana; Çolak Champollion, Tuǧba; Maischein, Hans-Martin; Geiger-Rudolph, Silke; Weiler, Christian; Nüsslein-Volhard, Christiane
2014-01-01
Interactions between all three pigment cell types are required to form the stripe pattern of adult zebrafish (Danio rerio), but their molecular nature is poorly understood. Mutations in leopard (leo), encoding Connexin 41.8 (Cx41.8), a gap junction subunit, cause a phenotypic series of spotted patterns. A new dominant allele, leotK3, leads to a complete loss of the pattern, suggesting a dominant negative impact on another component of gap junctions. In a genetic screen, we identified this component as Cx39.4 (luchs). Loss-of-function alleles demonstrate that luchs is required for stripe formation in zebrafish; however, the fins are almost not affected. Double mutants and chimeras, which show that leo and luchs are only required in xanthophores and melanophores, but not in iridophores, suggest that both connexins form heteromeric gap junctions. The phenotypes indicate that these promote homotypic interactions between melanophores and xanthophores, respectively, and those cells instruct the patterning of the iridophores. DOI: http://dx.doi.org/10.7554/eLife.05125.001 PMID:25535837
Structured Illumination Microscopy for the Investigation of Synaptic Structure and Function.
Hong, Soyon; Wilton, Daniel K; Stevens, Beth; Richardson, Douglas S
2017-01-01
The neuronal synapse is a primary building block of the nervous system to which alterations in structure or function can result in numerous pathologies. Studying its formation and elimination is the key to understanding how brains are wired during development, maintained throughout adulthood plasticity, and disrupted during disease. However, due to its diffraction-limited size, investigations of the synaptic junction at the structural level have primarily relied on labor-intensive electron microscopy or ultra-thin section array tomography. Recent advances in the field of super-resolution light microscopy now allow researchers to image synapses and associated molecules with high-spatial resolution, while taking advantage of the key characteristics of light microscopy, such as easy sample preparation and the ability to detect multiple targets with molecular specificity. One such super-resolution technique, Structured Illumination Microscopy (SIM), has emerged as an attractive method to examine synapse structure and function. SIM requires little change in standard light microscopy sample preparation steps, but results in a twofold improvement in both lateral and axial resolutions compared to widefield microscopy. The following protocol outlines a method for imaging synaptic structures at resolutions capable of resolving the intricacies of these neuronal connections.
NASA Astrophysics Data System (ADS)
Robertson, A.; Carroll, K. C.; Kubicki, C.; Purtshert, R.
2017-12-01
The Mesilla Basin/Conejos-Médanos aquifer system, extending from southern New Mexico to Chihuahua, Mexico, is a priority transboundary aquifer under the 2006 United States-Mexico Transboundary Aquifer Assessment Act. Declining water levels, deteriorating water quality, and increasing groundwater use by municipal, industrial, and agricultural users on both sides of the international border raise concerns about long-term aquifer sustainability. Relative contributions of present-day and "paleo" recharge to sustainable fresh groundwater yields has not been determined and evidence suggests that a large source of salinity at the distal end of the Mesilla Basin is saline discharge from deep groundwater flow. The magnitude and distribution of those deep saline flow paths are not determined. The contribution of deep groundwater to discharge and salinity in the shallow groundwater and surface water of the Mesilla Basin will be determined by collecting discrete groundwater samples and analyzing for aqueous geochemical and isotopic tracers, as well as the radioisotopes of argon and krypton. Analytes include major ions, trace elements, the stable isotopes of water, strontium and boron isotopes, uranium isotopes, the carbon isotopes of dissolved inorganic carbon, noble gas concentrations and helium isotope ratios. Dissolved gases are extracted and captured from groundwater wells using membrane contactors in a process known as ultra-trace sampling. Gas samples are analyzed for radioisotope ratios of krypton by the ATTA method and argon by low-level counting. Effectiveness of the ultra-trace sampling device and method was evaluated by comparing results of tritium concentrations to the krypton-85 content. Good agreement between the analyses, especially in samples with undetectable tritium, indicates that the ultra-trace procedure is effective and confirms that introduction of atmospheric air has not occurred. The geochemistry data indicate a complex system of geochemical endmembers, and mixing between these endmembers. Ongoing work seeks to better constrain groundwater ages and mixing models through the coupled use of conventional aqueous geochemical and isotopic analysis and the ultra-trace constituents.
30 CFR 250.415 - What must my casing and cementing programs include?
Code of Federal Regulations, 2010 CFR
2010-07-01
... included in API RP 65, Recommended Practice for Cementing Shallow Water Flow Zones in Deep Water Wells... and are in either of the following two areas: (1) An “area with an unknown shallow water flow potential” is a zone or geologic formation where neither the presence nor absence of potential for a shallow...
Tight junctions and human diseases.
Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki
2003-09-01
Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.
GaAs and 3-5 compound solar cells status and prospects for use in space
NASA Technical Reports Server (NTRS)
Flood, D. J.; Brinker, D. J.
1984-01-01
Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.
A simple model of space radiation damage in GaAs solar cells
NASA Technical Reports Server (NTRS)
Wilson, J. W.; Stith, J. J.; Stock, L. V.
1983-01-01
A simple model is derived for the radiation damage of shallow junction gallium arsenide (GaAs) solar cells. Reasonable agreement is found between the model and specific experimental studies of radiation effects with electron and proton beams. In particular, the extreme sensitivity of the cell to protons stopping near the cell junction is predicted by the model. The equivalent fluence concept is of questionable validity for monoenergetic proton beams. Angular factors are quite important in establishing the cell sensitivity to incident particle types and energies. A fluence of isotropic incidence 1 MeV electrons (assuming infinite backing) is equivalent to four times the fluence of normal incidence 1 MeV electrons. Spectral factors common to the space radiations are considered, and cover glass thickness required to minimize the initial damage for a typical cell configuration is calculated. Rough equivalence between the geosynchronous environment and an equivalent 1 MeV electron fluence (normal incidence) is established.
Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctions
NASA Astrophysics Data System (ADS)
Singh, Pooja; Rout, P. K.; Singh, Manju; Rakshit, R. K.; Dogra, Anjana
2015-09-01
We have investigated the effect of ferroelectric barium titanate (BaTiO3) film thickness on the charge transport mechanism in pulsed laser deposited epitaxial metal-ferroelectric semiconductor junctions. The current (I)-voltage (V) measurements across the junctions comprising of 20-500 nm thick BaTiO3 and conducting bottom electrode (Nb: SrTiO3 substrate or La2/3Ca1/3MnO3 buffer layer) demonstrate the space charge limited conduction. Further analysis indicates a reduction in the ratio of free to trapped carriers with increasing thickness in spite of decreasing trap density. Such behaviour arises the deepening of the shallow trap levels (<0.65 eV) below conduction band with increasing thickness. Moreover, the observed hysteresis in I-V curves implies a bipolar resistive switching behaviour, which can be explained in terms of charge trapping and de-trapping process.
Modeling of thin, back-wall silicon solar cells
NASA Technical Reports Server (NTRS)
Baraona, C. R.
1979-01-01
The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.
Zonula occludens-1 (ZO-1) is involved in morula to blastocyst transformation in the mouse
Wang, Hehai; Ding, Tianbing; Brown, Naoko; Yamamoto, Yasutoshi; Prince, Lawrence S.; Reese, Jeff; Paria, B. C.
2008-01-01
It is unknown whether or not tight junction formation plays any role in morula to blastocyst transformation that is associated with development of polarized trophoblast cells and fluid accumulation. Tight junctions are a hallmark of polarized epithelial cells and zonula occludens-1 (ZO-1) is a known key regulator of tight junction formation. Here we show that ZO-1 protein is first expressed during compaction of 8-cell embryos. This stage-specific appearance of ZO-1 suggests its participation in morula to blastocyst transition. Consistent with this idea, we demonstrate that ZO-1 siRNA delivery inside the blastomeres of zona-weakened embryos using electroporation not only knocks down ZO-1 gene and protein expressions, but also inhibits morula to blastocyst transformation in a concentration dependent manner. In addition, ZO-1 inactivation reduced the expression of Cdx2 and Oct-4, but not ZO-2 and F-actin. These results provide the first evidence that ZO-1 is involved in blastocyst formation from the morula by regulating accumulation of fluid and differentiation of nonpolar blastomeres to polar trophoblast cells. PMID:18423437
Modeling Neutron stars as r-process sources in Ultra Faint Dwarf galaxies
NASA Astrophysics Data System (ADS)
Safarzadeh, Mohammadtaher; Scannapieco, Evan
2018-06-01
To explain the high observed abundances of r-process elements in local ultrafaint dwarf (UFD) galaxies, we perform cosmological zoom simulations that include r-process production from neutron star mergers (NSMs). We model star formation stochastically and simulate two different haloes with total masses ≈108 M⊙ at z = 6. We find that the final distribution of [Eu/H] versus [Fe/H] is relatively insensitive to the energy by which the r-process material is ejected into the interstellar medium, but strongly sensitive to the environment in which the NSM event occurs. In one halo, the NSM event takes place at the centre of the stellar distribution, leading to high levels of r-process enrichment such as seen in a local UFD, Reticulum II (Ret II). In a second halo, the NSM event takes place outside of the densest part of the galaxy, leading to a more extended r-process distribution. The subsequent star formation occurs in an interstellar medium with shallow levels of r-process enrichment that results in stars with low levels of [Eu/H] compared to Ret II stars even when the maximum possible r-process mass is assumed to be ejected. This suggests that the natal kicks of neutron stars may also play an important role in determining the r-process abundances in UFD galaxies, a topic that warrants further theoretical investigation.
Geomorphic evidence for ancient seas on Mars
NASA Technical Reports Server (NTRS)
Parker, Timothy J.; Schneeberger, Dale M.; Pieri, David C.; Saunders, R. Stephen
1987-01-01
Geomorphic evidence is presented for ancient seas on Mars. Several features, similar to terrestrial lacustrine and coastal features, were identified along the northern plains periphery from Viking images. The nature of these features argues for formation in a predominantly liquid, shallow body of standing water. Such a shallow sea would require either relatively rapid development of shoreline morphologies or a warmer than present climate at the time of outflow channel formation.
Hei, Ziqing; Zhang, Ailan; Wei, Jing; Gan, Xiaoliang; Wang, Yanling; Luo, Gangjian; Li, Xiaoyun
2012-07-01
Gap junctions regulate proper kidney function by facilitating intercellular communication, vascular conduction, and tubular purinergic signaling. However, no clear relationship has been described between gap-junction function and acute kidney injury induced by the endotoxin lipopolysaccharide (LPS). Normal rat kidney epithelial cells (NRK52E cells) were seeded at high and low densities to promote or impede gap-junction formation, respectively, and establish distinctive levels of intercellular communication in culture. Cells were then challenged with LPS at various concentrations (10-1,000 ng/mL). LPS-induced formation and function of gap junctions were assessed by measuring changes in cell proliferation and colony-forming rates, fluorescent dye transmission to adjacent cells, expression levels of connexin43, and repositioning of confluent cells in response to the gap junction inhibitor oleamide or agonist retinoic acid. The cell proliferation rate and colony-forming rate of high- and low-density NRK52E cells were decreased upon LPS challenge, in a dose-dependent manner. The colony-forming rate of confluent high-density cells was significantly lower than that of low-density cells. Oleamide treatment raised the LPS-induced colony-forming rate of high-density cells, whereas retinoic acid decreased the rate. Neither oleamide nor retinoic acid significantly affected the LPS-induced colony-forming rate of low-density cells. Fluorescence transmission of high-density cells was reduced by LPS challenge, in a dose-dependent manner, but inclusion of retinoic acid increased the LPS-induced transmission of fluorescence. LPS challenge of either high- or low-density NRK52E cells resulted in down-regulated connexin43 expression. Gap-junction function plays an important role in concentration-dependent cytotoxic effect of LPS on normal rat kidney cells in vitro.
MicroRNA-205 targets tight junction-related proteins during urothelial cellular differentiation.
Chung, Pei-Jung Katy; Chi, Lang-Ming; Chen, Chien-Lun; Liang, Chih-Lung; Lin, Chung-Tzu; Chang, Yu-Xun; Chen, Chun-Hsien; Chang, Yu-Sun
2014-09-01
The mammalian bladder urothelium classified as basal, intermediate, and terminally differentiated umbrella cells offers one of the most effective permeability barrier functions known to exist in nature because of the formation of apical uroplakin plaques and tight junctions. To improve our understanding of urothelial differentiation, we analyzed the microRNA (miRNA) expression profiles of mouse urinary tissues and by TaqMan miRNA analysis of microdissected urothelial layers and in situ miRNA-specific hybridization to determine the dependence of these miRNAs on the differentiation stage. Our in situ hybridization studies revealed that miR-205 was enriched in the undifferentiated basal and intermediate cell layers. We then used a quantitative proteomics approach to identify miR-205 target genes in primary cultured urothelial cells subjected to antagomir-mediated knockdown of specific miRNAs. Twenty-four genes were reproducibly regulated by miR-205; eleven of them were annotated as cell junction- and tight junction-related molecules. Western blot analysis demonstrated that antagomir-induced silencing of miR-205 in primary cultured urothelial cells elevated the expression levels of Tjp1, Cgnl1, and Cdc42. Ectopic expression of miR-205 in MDCK cells inhibited the expression of tight junction proteins and the formation of tight junctions. miR-205- knockdown urothelial cells showed alterations in keratin synthesis and increases of uroplakin Ia and Ib, which are the urothelial differentiation products. These results suggest that miR-205 may contribute a role in regulation of urothelial differentiation by modulating the expression of tight junction-related molecules. © 2014 by The American Society for Biochemistry and Molecular Biology, Inc.
Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications
NASA Astrophysics Data System (ADS)
Niedzielski, Bethany Maria
A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.
1992-05-07
Officer. Dr. Kenneth Wynne d. Brief Description of Project- We are investigating the design and synthesis of strong, ultra-low density xerogel and aerogel ...materials of this type would have applications in a broad range of areas including lightweight engine components, high temperature coatings, aircraft wings...we plan to investigate the formation of ultra-low density composites using supercritical universal drying (SCUD) techniques. SiO2 aerogel materials
2010-01-21
substituted by Hf in the TaSi2 phase, indicating that this silicide has a great solubility for the group IV metals . At the triple point junctions Ta5Si3...Mathis Müller for his precious help in TEM specimens’ preparations . FA8655-09-M-4002 40 References 1. L. E. Toth: Transition Metal Carbides and...Transition Metal Disilicides,’ Acta Mater., 44, 3035 (1996). 21. H. Pastor and R. Meyer: An Investigation of the Effect of Additions of Metal Silicides
Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G.; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre‐Olivier; Hell, Stefan W.
2017-01-01
Key points Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell‐to‐cell diffusion of ions, metabolites and second messengers.Stimulation of the adenosine receptor subtype A2B increases the gap junction coupling in the human blood–brain barrier endothelial cell line hCMEC/D3.Although the increased gap junction coupling is cAMP‐dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase.We found that cAMP activates cyclic nucleotide‐gated (CNG) channels and thereby induces a Ca2+ influx, which leads to the increase in gap junction coupling.The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood–brain barrier. Abstract The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood–brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT‐PCR. Scrape loading/dye transfer was used to evaluate the impact of the A2A and A2B adenosine receptor subtype agonist 2‐phenylaminoadenosine (2‐PAA) on the gap junction coupling. We found that 2‐PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration‐dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2‐PAA‐related enhancement of gap junction coupling. In contrast, the cyclic nucleotide‐gated (CNG) channel inhibitor l‐cis‐diltiazem, as well as the chelation of intracellular Ca2+ with BAPTA, or the absence of external Ca2+, suppressed the 2‐PAA‐related enhancement of gap junction coupling. Moreover, we observed a 2‐PAA‐dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca2+ influx by opening CNG channels in a cAMP‐dependent manner. Ca2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor‐dependent signalling of endothelial cells of the blood–brain barrier. PMID:28075020
Bader, Almke; Bintig, Willem; Begandt, Daniela; Klett, Anne; Siller, Ina G; Gregor, Carola; Schaarschmidt, Frank; Weksler, Babette; Romero, Ignacio; Couraud, Pierre-Olivier; Hell, Stefan W; Ngezahayo, Anaclet
2017-04-15
Gap junction channels are essential for the formation and regulation of physiological units in tissues by allowing the lateral cell-to-cell diffusion of ions, metabolites and second messengers. Stimulation of the adenosine receptor subtype A 2B increases the gap junction coupling in the human blood-brain barrier endothelial cell line hCMEC/D3. Although the increased gap junction coupling is cAMP-dependent, neither the protein kinase A nor the exchange protein directly activated by cAMP were involved in this increase. We found that cAMP activates cyclic nucleotide-gated (CNG) channels and thereby induces a Ca 2+ influx, which leads to the increase in gap junction coupling. The report identifies CNG channels as a possible physiological link between adenosine receptors and the regulation of gap junction channels in endothelial cells of the blood-brain barrier. The human cerebral microvascular endothelial cell line hCMEC/D3 was used to characterize the physiological link between adenosine receptors and the gap junction coupling in endothelial cells of the blood-brain barrier. Expressed adenosine receptor subtypes and connexin (Cx) isoforms were identified by RT-PCR. Scrape loading/dye transfer was used to evaluate the impact of the A 2A and A 2B adenosine receptor subtype agonist 2-phenylaminoadenosine (2-PAA) on the gap junction coupling. We found that 2-PAA stimulated cAMP synthesis and enhanced gap junction coupling in a concentration-dependent manner. This enhancement was accompanied by an increase in gap junction plaques formed by Cx43. Inhibition of protein kinase A did not affect the 2-PAA-related enhancement of gap junction coupling. In contrast, the cyclic nucleotide-gated (CNG) channel inhibitor l-cis-diltiazem, as well as the chelation of intracellular Ca 2+ with BAPTA, or the absence of external Ca 2+ , suppressed the 2-PAA-related enhancement of gap junction coupling. Moreover, we observed a 2-PAA-dependent activation of CNG channels by a combination of electrophysiology and pharmacology. In conclusion, the stimulation of adenosine receptors in hCMEC/D3 cells induces a Ca 2+ influx by opening CNG channels in a cAMP-dependent manner. Ca 2+ in turn induces the formation of new gap junction plaques and a consecutive sustained enhancement of gap junction coupling. The report identifies CNG channels as a physiological link that integrates gap junction coupling into the adenosine receptor-dependent signalling of endothelial cells of the blood-brain barrier. © 2017 The Authors. The Journal of Physiology © 2017 The Physiological Society.
Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions
NASA Astrophysics Data System (ADS)
Tomer, D.; Rajput, S.; Li, L.
2017-04-01
Transport properties of graphene semiconductor Schottky junctions strongly depend on interfacial inhomogeneities due to the inherent formation of ripples and ridges. Here, chemical vapor deposited graphene is transferred onto multilayer MoS2 to fabricate Schottky junctions. These junctions exhibit rectifying current-voltage behavior with the zero bias Schottky barrier height increases and ideality factor decreases with increasing temperature between 210 and 300 K. Such behavior is attributed to the inhomogeneous interface that arises from graphene ripples and ridges, as revealed by atomic force and scanning tunneling microscopy imaging. Assuming a Gaussian distribution of the barrier height, a mean value of 0.96 ± 0.14 eV is obtained. These findings indicate a direct correlation between temperature dependent Schottky barrier height and spatial inhomogeneity in graphene/2D semiconductor Schottky junctions.
2014-09-01
fashion, thereby providing an experimental resolution previously unobtainable. Josephson junctions can be fabricated via many known methods; however... junction formation geometry. The objective of this study is to systematically investigate and de- termine the impact of local oxygen content on the ion...used advantageously in the fabrication of Josephson junction on films of YBa2Cu3O7−δ, wherein the film is annealed such that the oxygen content of the
Formation of p-n-p junction with ionic liquid gate in graphene
DOE Office of Scientific and Technical Information (OSTI.GOV)
He, Xin; Tang, Ning, E-mail: ntang@pku.edu.cn, E-mail: geweikun@mail.tsinghua.edu.cn, E-mail: bshen@pku.edu.cn; Duan, Junxi
2014-04-07
Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.
NASA Astrophysics Data System (ADS)
Kwon, Yoo Jin; Kwon, Yi Kyun
2017-04-01
The Middle Ordovician Yeongheung Formation consists of numerous meter-scale, shallowing-upward cycles which were deposited on a shallow-marine carbonate platform. Many diagnostic sedimentary textures and structures such as supratidal laminite, tepee structure, and solution-collapsed breccia are observed, which enable to infer the dry climate and high salinity conditions during deposition of the formation. In order to understand its depositional history, this study focuses on vertical and spatial stacking patterns of the second- to third-order sequences through the detailed outcrop description and geologic mapping. A total 19 lithofacies have been recognized, which can be grouped into 5 facies associations (FAs): FA1 (Supratidal flat), FA2 (Supratidal or dolomitization of peritidal facies), FA3 (Intertidal flat), FA4 (Shallow subtidal to peritidal platform), FA5 (Shallow subtidal shoal). Global mega-sequence boundary (Sauk-Tippecanoe) occurs in solution-collapsed breccia zone in the lower part of the formation. Correlation of the shallowing-upward cycle stacking pattern across the study area defines 6 transgressive-regressive depositional sequences. Each depositional sequences comprises a package of vertical and spatial staking of shallow subtidal cycles in the lower part and peritidal cycles in the upper part of the formation. According to sequence stratigraphic interpretation, the reconstructed relative sea-level curve of the Yeongweol platform is very similar to that of the Taebaek platform. Based on the absence of siliciclastic sequence such as the Jigunsan Formation and the lithologic & stratigraphic differences, however, the Yeongweol and Taebaek groups might not belong to a single depositional system within the North China platform. The Yeongweol Group can be divided by the four subunits into their unique lithologic successions and geographic distributions. The Eastern subunit of the Yeongweol Group is composed dominantly of carbonate rocks with a high composition ratio of siliciclastic materials dominated facies in the upper part of the Yeongheung Formation. The Middle1 subunit is pervasively recognized by subaerial exposures facies (carbonate breccia, paleosol), whereas the Middle2 subunit is similar to the Middle1 subunit except for the absence of subaerial exposure features. The Western subunit lost some of its primary sedimentary structure and texture in comparison to other subunits, because of the active recrystallization, metamorphism, structural deformation and carbonate diagenesis. This study reveals depositional history and refines sequence stratigraphy of the Yeongheung Formation, promoting understanding of the basin evolution of the Yeongweol Group.
NASA Technical Reports Server (NTRS)
Barner, J. B.; Kleinsasser, A. W.; Hunt, B. D.
1996-01-01
The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.
Recent developments in novel freezing and thawing technologies applied to foods.
Wu, Xiao-Fei; Zhang, Min; Adhikari, Benu; Sun, Jincai
2017-11-22
This article reviews the recent developments in novel freezing and thawing technologies applied to foods. These novel technologies improve the quality of frozen and thawed foods and are energy efficient. The novel technologies applied to freezing include pulsed electric field pre-treatment, ultra-low temperature, ultra-rapid freezing, ultra-high pressure and ultrasound. The novel technologies applied to thawing include ultra-high pressure, ultrasound, high voltage electrostatic field (HVEF), and radio frequency. Ultra-low temperature and ultra-rapid freezing promote the formation and uniform distribution of small ice crystals throughout frozen foods. Ultra-high pressure and ultrasound assisted freezing are non-thermal methods and shorten the freezing time and improve product quality. Ultra-high pressure and HVEF thawing generate high heat transfer rates and accelerate the thawing process. Ultrasound and radio frequency thawing can facilitate thawing process by volumetrically generating heat within frozen foods. It is anticipated that these novel technologies will be increasingly used in food industries in the future.
Miyake, Yuka; Inoue, Naoko; Nishimura, Koji; Kinoshita, Nagatoki; Hosoya, Hiroshi; Yonemura, Shigenobu
2006-05-15
The adherens junction (AJ) densely associated with actin filaments is a major cell-cell adhesion structure. To understand the importance of actin filament association in AJ formation, we first analyzed punctate AJs in NRK fibroblasts where one actin cable binds to one AJ structure unit. The accumulation of AJ components such as the cadherin/catenin complex and vinculin, as well as the formation of AJ-associated actin cables depended on Rho activity. Inhibitors for the Rho target, ROCK, which regulates myosin II activity, and for myosin II ATPase prevented the accumulation of AJ components, indicating that myosin II activity is more directly involved than Rho activity. Depletion of myosin II by RNAi showed similar results. The inhibition of myosin II activity in polarized epithelial MTD-1A cells affected the accumulation of vinculin to circumferential AJ (zonula adherens). Furthermore, correct zonula occludens (tight junction) formation along the apicobasal axis that requires cadherin activity was also impaired. Although MDCK cells which are often used as typical epithelial cells do not have a typical zonula adherens, punctate AJs formed dependently on myosin II activity by inducing wound closure in a MDCK cell sheet. These findings suggest that tension generated by actomyosin is essential for correct AJ assembly.
NASA Astrophysics Data System (ADS)
De Lange, Gert J.; Krijgsman, Wout
2014-05-01
The Messinian Salinity Crisis (MSC) is a dramatic event that took place ~ 5.9 Ma ago, and resulted in the deposition of 0.3-3 km thick evaporites at the Mediterranean seafloor. A considerable and long-lasting controversy existed on the modes of their formation. During the CIESM Almeria Workshop a consensus was reached on several aspects. In addition, remaining issues to be solved were identified, such as for the observed shallow gypsum versus deep dolostone deposits for the early phase of MSC. The onset of MSC is marked by deposition of gypsum/sapropel-like alternations, thought to relate to arid/humid climate conditions. Gypsum precipitation only occurred at marginal settings, while dolomite containing rocks have been reported from deeper settings. A range of potential explanations have been reported, most of which cannot satisfactorily explain all observations. Biogeochemical processes during MSC are poorly understood and commonly neglected. These may, however, explain that different deposits formed in shallow versus deep environments without needing exceptional physical boundary conditions for each. We present here a unifying mechanism in which gypsum formation occurs at all shallow water depths but its preservation is mostly limited to shallow sedimentary settings. In contrast, ongoing anoxic organic matter (OM) degradation processes in the deep basin result in the formation of dolomite. Gypsum precipitation in evaporating seawater takes place at 3-7 times concentrated seawater; seawater is always largely oversaturated relative to dolomite but its formation is thought to be inhibited by the presence of dissolved sulphate. Thus the conditions for formation of gypsum exclude those for the formation of dolomite and vice versa. Another process that links the saturation states of gypsum and dolomite is that of OM degradation by sulphate reduction. In stagnant deep water, oxygen is rapidly depleted through OM degradation, then sulphate becomes the main oxidant for OM mineralization, thus reducing the deep-water sulphate content. In addition, considerable amounts of dissolved carbonate are formed. This means that low-sulphate conditions as for MSC deepwater, i.e. unfavorable conditions for gypsum formation, always coincide with anoxic, i.e. oxygen-free conditions. Thus one would expect a bath-tub rim of gypsum at all shallow depths, but gypsum appears mainly at silled marginal basins. However, a thick package of heavy gypsum on top of more liquid mud in a marginal/slope setting is highly unstable, thus any physical disturbance such as tectonic activity or sea-level change, would easily lead to downslope transport of such marginal gypsum deposits. The absence of gypsum and the presence of erosional unconformities at the sill-less Mediterranean passive margins concord to such removal mechanism. In addition, large-scale re-sedimentation of gypsum has also been found for deep Messinian settings in the Northern Apennines and Sicily. Only at those marginal settings that were silled, the marginal gypsum deposits have been preserved. Including the dynamic biogeochemical processes in the thusfar static interpretations of evaporite formation mechanisms can thus account for the paradoxal, isochronous formation of shallow gypsum and deep-dolomite during the early MSC (1). (1) De Lange G.J. and Krijgsman W. (2010) Mar. Geol. 275, 273-277.
A four-way junction with triple-helical arms: design, characterization, and stability.
Makube, N; Klump, H H
2000-05-01
The formation of the four-way junction containing four triple-helical arms has been demonstrated using chemical methods (polyacrylamide gel electrophoresis and chemical footprinting using OsO(4) as a probe) and physical methods (UV absorbance melting and DSC). The junction J(T1T3) was assembled from two 20-mer purine strands and two 44-mer pyrimidine strands. To determine the contribution of the different arms to the stability of the complete structure of J(T1T3), the junction was compared to two simplified substructures, J(T1) and J(T3), respectively. Common to these complexes is the underlying double-helical four-way junction Js. Addition of Na(+) had a profound effect on stabilizing and subsequently folding the junctions into the stacked X-structures. The following results support the structure present: (i) The native polyacrylamide electrophoresis exhibits only a single band(s) corresponding to one species present when all four single strands are mixed in equal amounts. (ii) OsO(4) modifications were investigated at pH 5.0 and in the presence of 10 mM Mg(2+) and 100 mM Na(+). There is no cleavage of thymine residues at the branch point and throughout the structure. (iii) The thermal unfolding of J(T1) and J(T3) illustrates that the triple-helical arms are more stable than the double-helical arms which are contained in these junctions and that J(T1T3) with four triple-helical arms is slightly more stable than J(T1) and J(T3). (iv) The calorimetric transition enthalpies determined for the arms of J(T1T3) are comparable to those associated with the unfolding of its corresponding arms in J(T1) and J(T3). The results also illustrate that the formation of the junctions is not restricted by the pH, [Na(+)], sequence composition of the arms, and/or the loop position. Copyright 2000 Academic Press.
Liu, Ziliang; Shen, Fang; Zhu, Xiaomin; Li, Fengjie; Tan, Mengqi
2015-01-01
A large, shallow braided river delta sedimentary system developed in the Yanchang Formation during the Triassic in the southwest of the Ordos basin. In this braided delta system, abundant oil and gas resources have been observed, and the area is a hotspot for oil and gas resource exploration. Through extensive field work on outcrops and cores and analyses of geophysical data, it was determined that developments in the Late Triassic produced favorable geological conditions for the development of shallow water braided river deltas. Such conditions included a large basin, flat terrain, and wide and shallow water areas; wet and dry cyclical climate changes; ancient water turbulence; dramatic depth cycle changes; ancient uplift development; strong weathering of parent rock; and abundant supply. The shallow water braided river delta showed grain sediment granularity, plastic debris, and sediment with mature composition and structure that reflected the strong hydrodynamic environment of large tabular cross-bedding, wedge cross-bedding, and multiple positive rhythms superimposed to form a thick sand body layer. The branch river bifurcation developed underwater, and the thickness of the sand body increased further, indicating that the slope was slow and located in shallow water. The seismic responses of the braided river delta reflected strong shallow water performance, indicated by a progradation seismic reflection phase axis that was relatively flat; in addition, the seismic reflection amplitude was strong and continuous with a low angle and extended over considerable distances (up to 50 km). The sedimentary center was close to the provenance, the width of the river was large, and a shallow sedimentary structure and a sedimentary rhythm were developed. The development of the delta was primarily controlled by tectonic activity and changes in the lake level; as a result, the river delta sedimentary system eventually presented a "small plain, big front" character.
Liu, Ziliang; Shen, Fang; Zhu, Xiaomin; Li, Fengjie; Tan, Mengqi
2015-01-01
A large, shallow braided river delta sedimentary system developed in the Yanchang Formation during the Triassic in the southwest of the Ordos basin. In this braided delta system, abundant oil and gas resources have been observed, and the area is a hotspot for oil and gas resource exploration. Through extensive field work on outcrops and cores and analyses of geophysical data, it was determined that developments in the Late Triassic produced favorable geological conditions for the development of shallow water braided river deltas. Such conditions included a large basin, flat terrain, and wide and shallow water areas; wet and dry cyclical climate changes; ancient water turbulence; dramatic depth cycle changes; ancient uplift development; strong weathering of parent rock; and abundant supply. The shallow water braided river delta showed grain sediment granularity, plastic debris, and sediment with mature composition and structure that reflected the strong hydrodynamic environment of large tabular cross-bedding, wedge cross-bedding, and multiple positive rhythms superimposed to form a thick sand body layer. The branch river bifurcation developed underwater, and the thickness of the sand body increased further, indicating that the slope was slow and located in shallow water. The seismic responses of the braided river delta reflected strong shallow water performance, indicated by a progradation seismic reflection phase axis that was relatively flat; in addition, the seismic reflection amplitude was strong and continuous with a low angle and extended over considerable distances (up to 50 km). The sedimentary center was close to the provenance, the width of the river was large, and a shallow sedimentary structure and a sedimentary rhythm were developed. The development of the delta was primarily controlled by tectonic activity and changes in the lake level; as a result, the river delta sedimentary system eventually presented a “small plain, big front” character. PMID:26075611
Han, Bing; Hang Hu, Yun
2017-07-28
A novel technique, high temperature high pressure in situ Fourier transform infrared diffuse reflection spectroscopy, was successfully used to investigate the formation and stability of shallow trap states in P25 TiO 2 nanoparticles. Two types of shallow traps (with and without H atoms) were identified. The H-containing shallow trap can be easily generated by heating in H 2 atmosphere. However, the trap is unstable in vacuum at 600 °C. In contrast, the H-free shallow trap, which can be formed by heating in vacuum, is stable even at 600 °C. The energy gaps between shallow trap states and the conduction band are 0.09 eV for H-containing shallow trap and 0.13 eV for H-free shallow trap, indicating that the H-containing shallow trap state is closer to the conduction band than that without H.
Lee, Roger W.
1980-01-01
Shallow water in the coal-bearing Fort Union Formation of southeastern Montana was investigated to provide a better understanding of the geochemistry. Springs, wells less than 200 feet deep, and wells greater then 200 feet deep were observed to have different water qualities. Overall, the ground water exists as two systems: a mosaic of shallow, chemically dynamic, and localized recharge-discharge cells superimposed on a deeper, chemically static regional system. Water chemistry is highly variable in the shallow system, whereas sodium and bicarbonate waters characterize the deeper system. Within the shallow system , springs, and wells less than 200 feet deep show predominantly sodium and sulfate enrichment processes from recharge to discharge. These processes are consistent with the observed aquifer mineralogy and aqueous chemistry. However, intermittent mixing with downward moving recharge waters or upward moving deeper waters, and bacterially catalyzed sulfate reduction, may cause apparent reversals in these processes. (USGS)
Lee, Roger W.
1981-01-01
Shallow water in the coal-bearing Paleocene Fort Union Formation of southeastern Montana was investigated to provide a better understanding of its geochemistry. Springs, wells less than 200 feet deep, and wells greater than 200 feet deep were observed to have different water qualities. Overall, the ground water exists as two systems: a mosaic of shallow, chemically dynamic, and localized recharge-discharge cells superimposed on a deeper, chemically static regional system. Water chemistry is highly variable in the shallow system; whereas, waters containing sodium and bicarbonate characterize the deeper system. Within the shallow system, springs and wells less than 200 feet deep show predominantly sodium and sulfate enrichment processes from recharge to discharge. These processes are consistent with the observed aquifer mineralogy and aqueous chemistry. However, intermittent mixing with downward moving recharge waters or upward moving deeper waters, and bacterially catalyzed sulfate reduction, may cause apparent reversals in these processes.
Nanodiamond finding in the hyblean shallow mantle xenoliths.
Simakov, S K; Kouchi, A; Mel'nik, N N; Scribano, V; Kimura, Y; Hama, T; Suzuki, N; Saito, H; Yoshizawa, T
2015-06-01
Most of Earth's diamonds are connected with deep-seated mantle rocks; however, in recent years, μm-sized diamonds have been found in shallower metamorphic rocks, and the process of shallow-seated diamond formation has become a hotly debated topic. Nanodiamonds occur mainly in chondrite meteorites associated with organic matter and water. They can be synthesized in the stability field of graphite from organic compounds under hydrothermal conditions. Similar physicochemical conditions occur in serpentinite-hosted hydrothermal systems. Herein, we report the first finding of nanodiamonds, primarily of 6 and 10 nm, in Hyblean asphaltene-bearing serpentinite xenoliths (Sicily, Italy). The discovery was made by electron microscopy observations coupled with Raman spectroscopy analyses. The finding reveals new aspects of carbon speciation and diamond formation in shallow crustal settings. Nanodiamonds can grow during the hydrothermal alteration of ultramafic rocks, as well as during the lithogenesis of sediments bearing organic matter.
NASA Technical Reports Server (NTRS)
Burton, Rodney; Coverstone, Victoria
2009-01-01
UltraSail is a next-generation ultra-large (km2 class) sail system. Analysis of the launch, deployment, stabilization, and control of these sails shows that high-payload-mass fractions for interplanetary and deep-space missions are possible. UltraSail combines propulsion and control systems developed for formation-flying microsatellites with a solar sail architecture to achieve controllable sail areas approaching 1 km2. Electrically conductive CP-1 polyimide film results in sail subsystem area densities as low as 5 g/m2. UltraSail produces thrust levels many times those of ion thrusters used for comparable deep-space missions. The primary innovation involves the near-elimination of sail-supporting structures by attaching each blade tip to a formation- flying microsatellite, which deploys the sail and then articulates the sail to provide attitude control, including spin stabilization and precession of the spin axis. These microsatellite tips are controlled by microthrusters for sail-film deployment and mission operations. UltraSail also avoids the problems inherent in folded sail film, namely stressing, yielding, or perforating, by storing the film in a roll for launch and deployment. A 5-km long by 2 micrometer thick film roll on a mandrel with a 1 m circumference (32 cm diameter) has a stored thickness of 5 cm. A 5 m-long mandrel can store a film area of 25,000 m2, and a four-blade system has an area of 0.1 sq km.
NASA Astrophysics Data System (ADS)
Jiang, C.-S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.
2012-04-01
We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jiang, C. S.; Li, Z. G.; Moutinho, H. R.
2012-04-15
We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, whichmore » is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.« less
MarvelD3 couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival
Steed, Emily; Elbediwy, Ahmed; Vacca, Barbara; Dupasquier, Sébastien; Hemkemeyer, Sandra A.; Suddason, Tesha; Costa, Ana C.; Beaudry, Jean-Bernard; Zihni, Ceniz; Gallagher, Ewen; Pierreux, Christophe E.
2014-01-01
MarvelD3 is a transmembrane component of tight junctions, but there is little evidence for a direct involvement in the junctional permeability barrier. Tight junctions also regulate signaling mechanisms that guide cell proliferation; however, the transmembrane components that link the junction to such signaling pathways are not well understood. In this paper, we show that MarvelD3 is a dynamic junctional regulator of the MEKK1–c-Jun NH2-terminal kinase (JNK) pathway. Loss of MarvelD3 expression in differentiating Caco-2 cells resulted in increased cell migration and proliferation, whereas reexpression in a metastatic tumor cell line inhibited migration, proliferation, and in vivo tumor formation. Expression levels of MarvelD3 inversely correlated with JNK activity, as MarvelD3 recruited MEKK1 to junctions, leading to down-regulation of JNK phosphorylation and inhibition of JNK-regulated transcriptional mechanisms. Interplay between MarvelD3 internalization and JNK activation tuned activation of MEKK1 during osmotic stress, leading to junction dissociation and cell death in MarvelD3-depleted cells. MarvelD3 thus couples tight junctions to the MEKK1–JNK pathway to regulate cell behavior and survival. PMID:24567356
Togashi, Kazue; Kumagai, Jin; Sato, Emiko; Shirasawa, Hiromitsu; Shimoda, Yuki; Makino, Kenichi; Sato, Wataru; Kumazawa, Yukiyo; Omori, Yasufumi; Terada, Yukihiro
2015-06-01
We investigated the role of gap junctions (GJs) in embryological differentiation, and observed the morphological behavior of the inner cell mass (ICM) by time-lapse movie observation (TLM) with gap junction inhibitors (GJis). ICR mouse embryos were exposed to two types of GJis in CZB medium: oleamide (0 to 50 μM) and 1-heptanol (0 to 10 mM). We compared the rate of blastocyst formation at embryonic day 4.5 (E4.5) with E5.5. We also observed and evaluated the times from the second cleavage to each embryonic developing stage by TLM. We investigated embryonic distribution of DNA, Nanog protein, and Connexin 43 protein with immunofluorescent staining. In the comparison of E4.5 with E5.5, inhibition of gap junction intercellular communication (GJIC) delayed embryonic blastocyst formation. The times from the second cleavage to blastocyst formation were significantly extended in the GJi-treated embryos (control vs with oleamide, 2224 ± 179 min vs 2354 ± 278 min, p = 0.013). Morphological differences were traced in control versus GJi-treated embryos until the hatching stage. Oleamide induced frequent severe collapses of expanded blastocysts (77.4 % versus 26.3 %, p = 0.0001) and aberrant ICM divisions connected to sticky strands (74.3 % versus 5.3 %, p = 0.0001). Immunofluorescent staining indicated Nanog-positive cells were distributed in each divided ICM. GJIC plays an important role in blastocyst formation, collapses of expanded blastocysts, and the ICM construction in mouse embryos.
Origins and Driving Mechanisms for Shallow Methane Accumulations on the Svyatogor Ridge, Fram Strait
NASA Astrophysics Data System (ADS)
Waghorn, K. A.; Bunz, S.; Plaza-Faverola, A. A.; Westvig, I. M.; Johnson, J. E.
2015-12-01
The Svyatogor Ridge, located west of the Knipovich Spreading Ridge (KR) and south of the Molloy Transform Fault (MTF), is hypothesized to have once been the south tip of Vestnesa Ridge; a large sediment drift that was offset during the last 2 Ma along the MTF. The sedimentary cover across Svyatogor Ridge is limited, compared to Vestnesa Ridge, and basement outcrops are identified ~850 mbsf on the apex of the ridge. Despite the limited sedimentation, and its unique location at the intersection between the KR and MTF, Svyatogor Ridge has evidence of shallow gas accumulations; a strong BSR indicating a gas hydrate and underlying free gas system, and fluid flow pathways to the seafloor culminating in pockmarks. Using a high-resolution P-Cable 3D seismic survey, 2D seismic, and multibeam bathymetry data, we investigate how tectonic and sedimentary regimes have influenced the formation of a well-developed gas hydrate system. Sedimentation related with the Vestnesa drift on Svyatogor Ridge is interpreted to have begun ~2-3 Ma. The young age of the underlying oceanic crust, and subsequent synrift sediments below drift strata, suggests gas production from early Miocene aged hydrocarbon source identified in ODP Site 909 to the west, is unlikely in this region. Additionally, given the ultra-slow, magma limited spreading regime of the KR, we do not expect significant thermogenic methane generation from shallow magmatic sources. Therefore, in addition to some microbial gas production, Johnson et al. (2015) hypothesize a contribution from an abiotic source may explain the well-developed gas hydrate system. Large-scale basement faults identified in the seismic data are interpreted as detachment faults, which have exhumed relatively young ultramafic rocks. These detachment faults act as conduits for fluid flow, allowing circulation of seawater to drive serpentinization and subsequently act as pathways for fluids and abiotic methane to reach the shallow subsurface. This work aims to constrain the sedimentary and tectonic history of Svyatogor Ridge to determine 1) the relative interactions between basement detachment faults and overlying faults in the sedimentary cover, 2) the potential role of these faults as gas/fluid conduits and 3) how the underlying structural evolution has influenced the evolution of the gas hydrate system.
NASA Astrophysics Data System (ADS)
Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.
2017-12-01
With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.
NASA Astrophysics Data System (ADS)
Domke, Matthias; Rapp, Stephan; Huber, Heinz
For the monolithic serial interconnection of CIS thin film solar cells, 470 nm molybdenum films on glass substrates must be separated galvanically. The single pulse ablation with a 660 fs laser at a wavelength of 1053 nm is investigated in a fluence regime from 0.5 to 5.0 J/cm2. At fluences above 2.0 J/cm2 bump and jet formation can be observed that could be used for creating microstructures. For the investigation of the underlying mechanisms of the laser ablation process itself as well as of the bump or jet formation, pump probe microscopy is utilized to resolve the transient ablation behavior.
Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
Dai, Xing; Dayeh, Shadi A; Veeramuthu, Vaithianathan; Larrue, Alexandre; Wang, Jian; Su, Haibin; Soci, Cesare
2011-11-09
New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.
Side-wall spacer passivated sub-μm Josephson junction fabrication process
NASA Astrophysics Data System (ADS)
Grönberg, Leif; Kiviranta, Mikko; Vesterinen, Visa; Lehtinen, Janne; Simbierowicz, Slawomir; Luomahaara, Juho; Prunnila, Mika; Hassel, Juha
2017-12-01
We present a structure and a fabrication method for superconducting tunnel junctions down to the dimensions of 200 nm using i-line UV lithography. The key element is a sidewall-passivating spacer structure (SWAPS) which is shaped for smooth crossline contacting and low parasitic capacitance. The SWAPS structure enables formation of junctions with dimensions at or below the lithography-limited linewidth. An additional benefit is avoiding the excessive use of amorphous dielectric materials which is favorable in sub-Kelvin microwave applications often plagued by nonlinear and lossy dielectrics. We apply the structure to niobium trilayer junctions, and provide characterization results yielding evidence on wafer-scale scalability, and critical current density tuning in the range of 0.1-3.0 kA cm-2. We discuss the applicability of the junction process in the context of different applications, such as SQUID magnetometers and Josephson parametric amplifiers.
Herde, Katja; Hartmann, Sonja; Brehm, Ralph; Kilian, Olaf; Heiss, Christian; Hild, Anne; Alt, Volker; Bergmann, Martin; Schnettler, Reinhard; Wenisch, Sabine
2007-11-01
In bone a role of connexin 43 has been implicated with the fusion of mononuclear precursors of the monocyte/macrophage lineage into multinucleated cells. In order to investigate the putative role of connexin 43 in formation of bone osteoclast-like foreign body giant cells which are formed in response to implantation of biomaterials, nanoparticulate hydroxyapatite had been implanted into defects of minipig femura. After 20 days the defect areas were harvested and connexin 43 expression and synthesis were investigated by using immunohistochemistry, Western Blot, and in situ hybridization within macrophages and osteoclast-like foreign body giant cells. Morphological analysis of gap junctions is performed ultrastructurally. As shown on protein and mRNA level numerous connexin 43 positive macrophages and foreign body giant cells (FBGC) were localized within the granulation tissue and along the surfaces of the implanted hydroxyapatite (HA). Besides, the formation of FBGC by fusion of macrophages could be shown ultrastructurally. Connexin 43 labeling observed on the protein and mRNA level could be attributed to gap junctions identified ultrastructurally between macrophages, between FBGC, and between FBGC and macrophages. Annular gap junctions in the cytoplasm of FBGC pointed to degradation of the channels, and the ubiquination that had occurred in the course of degradation was confirmed by Western blot analysis. All in all, the presently observed pattern of connexin 43 labeling refers to an functional role of gap junctional communication in the formation of osteoclast-like foreign body giant cells formed in response to implantation of the nanoparticulate HA.
Revenu, Céline; Streichan, Sebastian; Donà, Erika; Lecaudey, Virginie; Hufnagel, Lars; Gilmour, Darren
2014-03-01
The directed migration of cell collectives drives the formation of complex organ systems. A characteristic feature of many migrating collectives is a 'tissue-scale' polarity, whereby 'leader' cells at the edge of the tissue guide trailing 'followers' that become assembled into polarised epithelial tissues en route. Here, we combine quantitative imaging and perturbation approaches to investigate epithelial cell state transitions during collective migration and organogenesis, using the zebrafish lateral line primordium as an in vivo model. A readout of three-dimensional cell polarity, based on centrosomal-nucleus axes, allows the transition from migrating leaders to assembled followers to be quantitatively resolved for the first time in vivo. Using live reporters and a novel fluorescent protein timer approach, we investigate changes in cell-cell adhesion underlying this transition by monitoring cadherin receptor localisation and stability. This reveals that while cadherin 2 is expressed across the entire tissue, functional apical junctions are first assembled in the transition zone and become progressively more stable across the leader-follower axis of the tissue. Perturbation experiments demonstrate that the formation of these apical adherens junctions requires dynamic microtubules. However, once stabilised, adherens junction maintenance is microtubule independent. Combined, these data identify a mechanism for regulating leader-to-follower transitions within migrating collectives, based on the relocation and stabilisation of cadherins, and reveal a key role for dynamic microtubules in this process.
230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions
NASA Astrophysics Data System (ADS)
Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji
2005-02-01
Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.
NASA Technical Reports Server (NTRS)
Head, James W.; Wilson, Lionel
1992-01-01
The production of magma reservoirs and neutral buoyancy zones (NBZs) on Venus and the implications of their development for the formation and evolution of volcanic landforms are examined. The high atmospheric pressure on Venus reduces volatile exsolution and generally serves to inhibit the formation of NBZs and shallow magma reservoirs. For a range of common terrestrial magma-volatile contents, magma ascending and erupting near or below mean planetary radius (MPR) should not stall at shallow magma reservoirs; such eruptions are characterized by relatively high total volumes and effusion rates. For the same range of volatile contents at 2 km above MPR, about half of the cases result in the direct ascent of magma to the surface and half in the production of neutral buoyancy zones. NBZs and shallow magma reservoirs begin to appear as gas content increases and are nominally shallower on Venus than on earth. For a fixed volatile content, NBZs become deeper with increasing elevation: over the range of elevations treated in this study (-1 km to +4.4 km) depths differ by a factor of 2-4. Factors that may account for the low height of volcanoes on Venus are discussed.
Langmuir Probe Diagnostics of Pulsed Plasma Doping System
NASA Astrophysics Data System (ADS)
Lei, Yu; Overzet, Lawrence J.; Felch, Susan B.; Fang, Ziwei; Koo, Bon-Woong; Goeckner, Matthew J.
2002-10-01
Pulsed plasma doping (P2LAD) is a potential solution to implement ultra-shallow junctions. In this study, Langmuir probe diagnostics techniques were investigated thoroughly for its application to P2LAD system, and the current sensing scheme using batteries and a 'downstairs' load resistor turned out to be the most reliable. Severe limitations of current transformers were found in diagnostics of pulsed plasma. A floating probe was proven to be good at monitoring the disturbances of the Langmuir probe and the cathode voltage. With the above technique, time-resolved Langmuir probe measurements have been carried out in a P2LAD system. The Langmuir probe data in Ar plasma indicate that during a 20 microns long implant pulse the plasma density ranges from 1E9 1E10 cm-3 and the electron temperature ranges from 0.4 to 14 eV. Between the pulses, the density keeps at the high level for 30 ms and then decays exponentially until reaching the range of 3E8 1E9 cm-3, which demonstrates the presence of residual plasma between pulses. A non-zero plasma density during the afterglow is also observed for BF3 plasma. Significant amounts of primary electron and electron beams are present during the ignition and ensuing steady region in both Ar and BF3 plasmas while they are much stronger in BF3 plasma. Plasma density is observed to increase with cathode voltage and pressure while the electron temperature is mainly influenced by the pressure. An overshoot of the cathode voltage during the afterglow region was found, and it significantly influences the plasma potential during the afterglow.
Orrell, John; Hoppe, Eric
2018-01-26
Working as part of a collaborative team, PNNL is bringing its signature capability in ultra-low-level detection to help search for a rare form of radioactive decay-never before detected-called "neutrinoless double beta decay" in germanium. If observed, it would demonstrate neutrinos are Majorana-type particles. This discovery would show neutrinos are unique among fundamental particles, having a property whereby the matter and anti-matter version of this particle are indistinguishable. Physicist John L. Orrell explains how they rely on the Shallow Underground Laboratory to conduct the research.
Calibration of an Ultra-Low-Background Proportional Counter for Measuring 37Ar
DOE Office of Scientific and Technical Information (OSTI.GOV)
Seifert, Allen; Aalseth, Craig E.; Bonicalzi, Ricco
Abstract. An ultra-low-background proportional counter (ULBPC) design has been developed at Pacific Northwest National Laboratory (PNNL) using clean materials, primarily electrochemically-purified copper. This detector, along with an ultra-low-background counting system (ULBCS), was developed to complement a new shallow underground laboratory (30 meters water-equivalent) constructed at PNNL. The ULBCS design includes passive neutron and gamma shielding, along with an active cosmic-veto system. This system provides a capability for making ultra-sensitive measurements to support applications like age-dating soil hydrocarbons with 14C/3H, age-dating of groundwater with 39Ar, and soil-gas assay for 37Ar to support On-Site Inspection (OSI). On-Site Inspection is a key componentmore » of the verification regime for the Comprehensive Nuclear-Test-Ban Treaty (CTBT). Measurements of radionuclides created by an underground nuclear explosion are valuable signatures of a Treaty violation. For OSI, the 35-day half-life of 37Ar, produced from neutron interactions with calcium in soil, provides both high specific activity and sufficient time for inspection before decay limits sensitivity. This work describes the calibration techniques and analysis methods developed to enable quantitative measurements of 37Ar samples over a broad range of pressures. These efforts, along with parallel work in progress on gas chemistry separation, are expected to provide a significant new capability for 37Ar soil gas background studies.« less
NASA Astrophysics Data System (ADS)
Messner, Mark C.; Rhee, Moono; Arsenlis, Athanasios; Barton, Nathan R.
2017-06-01
This work develops a method for calibrating a crystal plasticity model to the results of discrete dislocation (DD) simulations. The crystal model explicitly represents junction formation and annihilation mechanisms and applies these mechanisms to describe hardening in hexagonal close packed metals. The model treats these dislocation mechanisms separately from elastic interactions among populations of dislocations, which the model represents through a conventional strength-interaction matrix. This split between elastic interactions and junction formation mechanisms more accurately reproduces the DD data and results in a multi-scale model that better represents the lower scale physics. The fitting procedure employs concepts of machine learning—feature selection by regularized regression and cross-validation—to develop a robust, physically accurate crystal model. The work also presents a method for ensuring the final, calibrated crystal model respects the physical symmetries of the crystal system. Calibrating the crystal model requires fitting two linear operators: one describing elastic dislocation interactions and another describing junction formation and annihilation dislocation reactions. The structure of these operators in the final, calibrated model reflect the crystal symmetry and slip system geometry of the DD simulations.
Endoplasmic reticulum-plasma membrane junctions: structure, function and dynamics.
Okeke, Emmanuel; Dingsdale, Hayley; Parker, Tony; Voronina, Svetlana; Tepikin, Alexei V
2016-06-01
Endoplasmic reticulum (ER)-plasma membrane (PM) junctions are contact sites between the ER and the PM; the distance between the two organelles in the junctions is below 40 nm and the membranes are connected by protein tethers. A number of molecular tools and technical approaches have been recently developed to visualise, modify and characterise properties of ER-PM junctions. The junctions serve as the platforms for lipid exchange between the organelles and for cell signalling, notably Ca(2+) and cAMP signalling. Vice versa, signalling events regulate the development and properties of the junctions. Two Ca(2+) -dependent mechanisms of de novo formation of ER-PM junctions have been recently described and characterised. The junction-forming proteins and lipids are currently the focus of vigorous investigation. Junctions can be relatively short-lived and simple structures, forming and dissolving on the time scale of a few minutes. However, complex, sophisticated and multifunctional ER-PM junctions, capable of attracting numerous protein residents and other cellular organelles, have been described in some cell types. The road from simplicity to complexity, i.e. the transformation from simple 'nascent' ER-PM junctions to advanced stable multiorganellar complexes, is likely to become an attractive research avenue for current and future junctologists. Another area of considerable research interest is the downstream cellular processes that can be activated by specific local signalling events in the ER-PM junctions. Studies of the cell physiology and indeed pathophysiology of ER-PM junctions have already produced some surprising discoveries, likely to expand with advances in our understanding of these remarkable organellar contact sites. © 2016 The Authors. The Journal of Physiology © 2016 The Physiological Society.
Rahman, MuhibUr; Park, Jung-Dong
2018-03-19
In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.5, 5.25, 5.7, and 8.2 GHz, inseminating four rectangular complementary split ring resonators (RCSRRs) on the radiating patch and placing two rectangular split-ring resonators (RSRR) near the feedline-patch junction of the conventional ultra-wideband (UWB) antenna. The design guidelines of the implemented notched bands are provided at the desired frequency bands and analyzed. The measured results demonstrate that the proposed antenna delivers a wide impedance bandwidth from 3 to 11 GHz with a nearly omnidirectional radiation pattern, high rejection in the multiple notched-bands, and good radiation efficiency over the entire frequency band except at the notched frequencies. Simulated and measured response match well specifically at the stop-bands.
Controlling the phase locking of stochastic magnetic bits for ultra-low power computation
NASA Astrophysics Data System (ADS)
Mizrahi, Alice; Locatelli, Nicolas; Lebrun, Romain; Cros, Vincent; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Querlioz, Damien; Grollier, Julie
2016-07-01
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to the thermal energy at room temperature. Then, switches of the magnetization spontaneously occur. These volatile, superparamagnetic nanomagnets are generally considered useless. But what if we could use them as low power computational building blocks? Remarkably, they can oscillate without the need of any external dc drive, and despite their stochastic nature, they can beat in unison with an external periodic signal. Here we show that the phase locking of superparamagnetic tunnel junctions can be induced and suppressed by electrical noise injection. We develop a comprehensive model giving the conditions for synchronization, and predict that it can be achieved with a total energy cost lower than 10-13 J. Our results open the path to ultra-low power computation based on the controlled synchronization of oscillators.
Controlling the phase locking of stochastic magnetic bits for ultra-low power computation.
Mizrahi, Alice; Locatelli, Nicolas; Lebrun, Romain; Cros, Vincent; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Querlioz, Damien; Grollier, Julie
2016-07-26
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm(3), the energy barrier between magnetic configurations becomes comparable to the thermal energy at room temperature. Then, switches of the magnetization spontaneously occur. These volatile, superparamagnetic nanomagnets are generally considered useless. But what if we could use them as low power computational building blocks? Remarkably, they can oscillate without the need of any external dc drive, and despite their stochastic nature, they can beat in unison with an external periodic signal. Here we show that the phase locking of superparamagnetic tunnel junctions can be induced and suppressed by electrical noise injection. We develop a comprehensive model giving the conditions for synchronization, and predict that it can be achieved with a total energy cost lower than 10(-13) J. Our results open the path to ultra-low power computation based on the controlled synchronization of oscillators.
2018-01-01
In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.5, 5.25, 5.7, and 8.2 GHz, inseminating four rectangular complementary split ring resonators (RCSRRs) on the radiating patch and placing two rectangular split-ring resonators (RSRR) near the feedline-patch junction of the conventional ultra-wideband (UWB) antenna. The design guidelines of the implemented notched bands are provided at the desired frequency bands and analyzed. The measured results demonstrate that the proposed antenna delivers a wide impedance bandwidth from 3 to 11 GHz with a nearly omnidirectional radiation pattern, high rejection in the multiple notched-bands, and good radiation efficiency over the entire frequency band except at the notched frequencies. Simulated and measured response match well specifically at the stop-bands. PMID:29562714
Morin, Scott J
2017-03-01
There has been much debate regarding the optimal oxygen tension in clinical embryo culture. The majority of the literature to date has compared 5% oxygen to atmospheric levels (20-21%). While the majority of modern IVF labs have accepted the superiority of 5% oxygen tension, a new debate has emerged regarding whether a further reduction after day 3 of development represents the most physiologic system. This new avenue of research is based on the premise that oxygen tension is in fact lower in the uterus than in the oviduct and that the embryo crosses the uterotubal junction sometime on day 3. While data are currently limited, recent experience with ultra-low oxygen (2%) after day 3 of development suggests that the optimal oxygen tension in embryo culture may depend on the stage of development. This review article will consider the current state of the literature and discuss ongoing efforts at studying ultra-low oxygen tension in extended culture.
Zhernov, O A; Osadcha, O I; Zhernov, A O; Nazarenko, V M; Staskevych, S V
2011-07-01
Peculiarities of the burn wound course and the cicatricial tissue formation are shown. Clinical efficacy of application of cream Karipaine and gel Karipaine Ultra was proved, witnessed by improvement of the cell to tissue interaction as well as the connective tissue metabolism and the cicatricial tissue reconstruction.
Ultra-senstitive magnesium oxide-based magnetic tunnel junctions for spintronic immunoassay
NASA Astrophysics Data System (ADS)
Shen, Weifeng
We systematically studied the spin-dependent tunnel properties of MgO-based magnetic tunnel junctions (MTJs). Utilizing the spin-coherent tunnel effects of the MgO (001) insulating layer, we have achieved large tunneling magnetoresistance (TMR) ratios (above 200%) at room temperature in optimized MTJ devices. We have shown that the MgO surface roughness, and therefore device magnetoresistance, depends strongly on the pressure of the Ar sputtering gas. We have investigated the characteristics of MgO-MTJs, including their dependence on barrier thickness and bias voltage, their thermal stability and resistance to electrostatic discharge (ESD). We have also fabricated MgO-MTJs with a synthetic antiferromagnetic (SAF) free layer, which exhibits a coherent, single-domain-like switching. Our data show that MgO-MTJs have superior properties for low-field magnetic field sensing applications as compared with conventional AlOx-based MTJs. Based on this giant TMR effect, we designed and developed ultra-sensitive magnetic tunnel junction (MTJ) sensors and sensor arrays for biomagnetic sensing applications. By integrating MTJ sensor arrays into microfluidic channels, we were able to detect the presence of moving, micron-size superparamagnetic beads in real time. We have obtained an average signal of 80 mV for a single Dynal M-280 bead, with a signal-to-noise ratio (SNR) of 24 dB. We also biologically treated the MTJ sensor array surfaces, and demonstrated the detection of 2.5 muM single strand target DNA labeled with 16-nm-diameter Fe3O 4 nanoparticles (NPs). Our measured signal of 72 muV indicates that the current system's detection limit for analyte DNA is better than 150 nM. We also demonstrated the detection of live HeLa cells labeled with Fe 3O4 nanoparticles, with an effective signal of 8 mV and a signal-to-noise ratio of 6 dB. These results represent an important milestone in the development of spintronics immunoassay technology: the detection of a single live cell labeled with magnetic nanoparticles. All the data show conclusively that MTJ sensors and sensor arrays are very promising candidates for future applications involving the accurate detection and identification of biomolecules tagged with magnetic labels.
The Jurassic section along McElmo Canyon in southwestern Colorado
O'Sullivan, Robert B.
1997-01-01
In McElmo Canyon, Jurassic rocks are 1500-1600 ft thick. Lower Jurassic rocks of the Glen Canyon Group include (in ascending order) Wingate Sandstone, Kayenta Formation and Navajo Sandstone. Middle Jurassic rocks are represented by the San Rafael Group, which includes the Entrada Sandstone and overlying Wanakah Formation. Upper Jurassic rocks comprise the Junction Creek Sandstone overlain by the Morrison Formation. The Burro Canyon Formation, generally considered to be Lower Cretaceous, may be Late Jurassic in the McElmo Canyon area and is discussed with the Jurassic. The Upper Triassic Chinle Formation in the subsurface underlies, and the Upper Cretaceous Dakota Sandstone overlies, the Jurassic section. An unconformity is present at the base of the Glen Canyon Group (J-0), at the base of the San Rafael Group (J-2), and at the base of the Junction Creek Sandstone (J-5). Another unconformity of Cretaceous age is at the base of the Dakota Sandstone. Most of the Jurassic rocks consist of fluviatile, lacustrine and eolian deposits. The basal part of the Entrada Sandstone and the Wanakah Formation may be of marginal marine origin.
uleSIMS characterization of silver reference surfaces
NASA Astrophysics Data System (ADS)
Palitsin, V. V.; Dowsett, M. G.; Mata, B. Guzmán de la; Oloff, I. W.; Gibbons, R.
2006-07-01
Ultra low energy SIMS (uleSIMS) is a high sensitivity analytical technique that is normally used for ultra shallow profiling at a depth resolution of up to1 nm. This work describes the use of uleSIMS as both a spectroscopic and depth-profiling tool for the characterization of the early stages of corrosion formed on reference surfaces of silver. These samples are being developed to help with the characterization of tarnished surfaces in a cultural heritage context, and uleSIMS enables the tarnishing to be studied from its very earliest stages due to its high sensitivity (ppm-ppb) and surface specificity. We show that, uleSIMS can be used effectively to study the surface chemistry and aid the development of reference surfaces themselves. In particular, handling contaminants, surface dust, and residues from polishing are relatively easy to identify allowing them to be separated from the parts of the mass spectrum specific to the early stages of corrosion.
Breen, Kevin J.; Revesz, Kinga; Baldassare, Fred J.; McAuley, Steven D.
2007-01-01
In January 2001, State oil and gas inspectors noted bubbles of natural gas in well water during a complaint investigation near Tioga Junction, Tioga County, north-central Pa. By 2004, the gas occurrence in ground water and accumulation in homes was a safety concern; inspectors were taking action to plug abandoned gas wells and collect gas samples. The origins of the natural-gas problems in ground water were investigated by the U.S. Geological Survey, in cooperation with the Pennsylvania Department of Environmental Protection, in wells throughout an area of about 50 mi2, using compositional and isotopic characteristics of methane and ethane in gas and water wells. This report presents the results for gas-well and water-well samples collected from October 2004 to September 2005. Ground water for rural-domestic supply and other uses near Tioga Junction is from two aquifer systems in and adjacent to the Tioga River valley. An unconsolidated aquifer of outwash sand and gravel of Quaternary age underlies the main river valley and extends into the valleys of tributaries. Fine-grained lacustrine sediments separate shallow and deep water-bearing zones of the outwash. Outwash-aquifer wells are seldom deeper than 100 ft. The river-valley sediments and uplands adjacent to the valley are underlain by a fractured-bedrock aquifer in siliciclastic rocks of Paleozoic age. Most bedrock-aquifer wells produce water from the Lock Haven Formation at depths of 250 ft or less. A review of previous geologic investigations was used to establish the structural framework and identify four plausible origins for natural gas. The Sabinsville Anticline, trending southwest to northeast, is the major structural feature in the Devonian bedrock. The anticline, a structural trap for a reservoir of deep native gas in the Oriskany Sandstone (Devonian) (origin 1) at depths of about 3,900 ft, was explored and tapped by numerous wells from 1930-60. The gas reservoir in the vicinity of Tioga Junction, depleted of native gas, was converted to the Tioga gas-storage field for injection and withdrawal of non-native gases (origin 2). Devonian shale gas (shallow native gas) also has been reported in the area (origin 3). Gas might also originate from microbial degradation of buried organic material in the outwash deposits (origin 4). An inventory of combustible-gas concentrations in headspaces of water samples from 91 wells showed 49 wells had water containing combustible gases at volume fractions of 0.1 percent or more. Well depth was a factor in the observed occurrence of combustible gas for the 62 bedrock wells inventoried. As well-depth range increased from less than 50 ft to 51-150 ft to greater than 151 ft, the percentage of bedrock-aquifer wells with combustible gas increased. Wells with high concentrations of combustible gas occurred in clusters; the largest cluster was near the eastern boundary of the gas-storage field. A subsequent detailed gas-sampling effort focused on 39 water wells with the highest concentrations of combustible gas (12 representing the outwash aquifer and 27 from the bedrock aquifer) and 8 selected gas wells. Three wells producing native gas from the Oriskany Sandstone and five wells (two observation wells and three injection/withdrawal wells) with non-native gas from the gas-storage field were sampled twice. Chemical composition, stable carbon and hydrogen isotopes of methane (13CCH4 and DCH4), and stable carbon isotopes of ethane (13CC2H6) were analyzed. No samples could be collected to document the composition of microbial gas originating in the outwash deposits (outwash or 'drift' gas) or of native natural gas originating solely in Devonian shale at depths shallower than the Oriskany Sandstone, although two of the storage-field observation wells sampled reportedly yielded some Devonian shale gas. Literature values for outwash or 'drift' gas and Devonian shale gases were used to supplement the data collection. Non-native gases fr
Mapping the Transmission Functions of Single-Molecule Junctions.
Capozzi, Brian; Low, Jonathan Z; Xia, Jianlong; Liu, Zhen-Fei; Neaton, Jeffrey B; Campos, Luis M; Venkataraman, Latha
2016-06-08
Charge transport phenomena in single-molecule junctions are often dominated by tunneling, with a transmission function dictating the probability that electrons or holes tunnel through the junction. Here, we present a new and simple technique for measuring the transmission functions of molecular junctions in the coherent tunneling limit, over an energy range of 1.5 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different exposed areas, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junction Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction's transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed from first principles. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.
Photovoltaic devices comprising zinc stannate buffer layer and method for making
Wu, Xuanzhi; Sheldon, Peter; Coutts, Timothy J.
2001-01-01
A photovoltaic device has a buffer layer zinc stannate Zn.sub.2 SnO.sub.4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
Dynamics between actin and the VE-cadherin/catenin complex
Abu Taha, Abdallah; Schnittler, Hans-J
2014-01-01
Endothelial adherens junctions are critical for physiological and pathological processes such as differentiation, maintenance of entire monolayer integrity, and the remodeling. The endothelial-specific VE-cadherin/catenin complex provides the backbone of adherens junctions and acts in close interaction with actin filaments and actin/myosin-mediated contractility to fulfill the junction demands. The functional connection between the cadherin/catenin complex and actin filaments might be either directly through α-catenins, or indirectly e.g., via linker proteins such as vinculin, p120ctn, α-actinin, or EPLIN. However, both junction integrity and dynamic remodeling have to be contemporarily coordinated. The actin-related protein complex ARP2/3 and its activating molecules, such as N-WASP and WAVE, have been shown to regulate the lammellipodia-mediated formation of cell junctions in both epithelium and endothelium. Recent reports now demonstrate a novel aspect of the ARP2/3 complex and the nucleating-promoting factors in the maintenance of endothelial barrier function and junction remodeling of established endothelial cell junctions. Those mechanisms open novel possibilities; not only in fulfilling physiological demands but obtained information may be of critical importance in pathologies such as wound healing, angiogenesis, inflammation, and cell diapedesis. PMID:24621569
Jiao, Anjun; Han, Xu; Critser, John K; Ma, Hongbin
2006-06-01
During freezing, cells are often damaged directly or indirectly by ice formation. Vitrification is an alternative approach to cryopreservation that avoids ice formation. The common method to achieve vitrification is to use relatively high concentrations of cryoprotectant agents (CPA) in combination with a relatively slow cooling rate. However, high concentrations of CPAs have potentially damaging toxic and/or osmotic effects on cells. Therefore, establishing methods to achieve vitrification with lower concentrations of CPAs through ultra-fast cooling rates would be advantageous in these aspects. These ultra-fast cooling rates can be realized by a cooling system with an ultra-high heat transfer coefficient (h) between the sample and coolant. The oscillating motion heat pipe (OHP), a novel cooling device utilizing the pressure change to excite the oscillation motion of the liquid plugs and vapor bubbles, can significantly increase h and may fulfill this aim. The current investigation was designed to numerically study the effects of different values of h on the transient heat transfer characteristics and vitrification tendencies of the cell suspension during the cooling processes in an ultra-thin straw (100 microm in diameter). The transient temperature distribution, the cooling rate and the volume ratio (x) of the ice quantity to the maximum crystallizable ice of the suspension were calculated. From these numerical results, it is concluded that the ultra-high h (>10(4) W/m2 K) obtained by OHPs could facilitate vitrification by efficiently decreasing x as well as the time to pass through the dangerous temperature region where the maximum ice formation happens. For comparison, OHPs can decrease both of the parameters to less than 20% of those from the widely used open pulled straw methods. Therefore, the OHP method will be a promising approach to improving vitrification tendencies of CPA solutions and could also decrease the required concentration of CPAs for vitrification, both of which are of great importance for the successful cryopreservation of cells by vitrification.
p -n Junction Rectifying Characteristics of Purely n -Type GaN-Based Structures
NASA Astrophysics Data System (ADS)
Zuo, P.; Jiang, Y.; Ma, Z. G.; Wang, L.; Zhao, B.; Li, Y. F.; Yue, G.; Wu, H. Y.; Yan, H. J.; Jia, H. Q.; Wang, W. X.; Zhou, J. M.; Sun, Q.; Liu, W. M.; Ji, An-Chun; Chen, H.
2017-08-01
The GaN-based p -n junction rectifications are important in the development of high-power electronics. Here, we demonstrate that p -n junction rectifying characteristics can be realized with pure n -type structures by inserting an (In,Ga)N quantum well into the GaN /(Al ,Ga )N /GaN double heterostructures. Unlike the usual barriers, the insertion of an (In,Ga)N quantum well, which has an opposite polarization field to that of the (Al,Ga)N barrier, tailors significantly the energy bands of the system. The lifted energy level of the GaN spacer and the formation of the (In ,Ga )N /GaN interface barrier can improve the reverse threshold voltage and reduce the forward threshold voltage simultaneously, forming the p -n junction rectifying characteristics.
Adsorbed states of chlorophenol on Cu(110) and controlled switching of single-molecule junctions
DOE Office of Scientific and Technical Information (OSTI.GOV)
Okuyama, H., E-mail: hokuyama@kuchem.kyoto-u.ac.jp; Kitaguchi, Y.; Hattori, T.
A molecular junction of substituted benzene (chlorophenol) is fabricated and controlled by using a scanning tunneling microscope (STM). Prior to the junction formation, the bonding geometry of the molecule on the surface is characterized by STM and electron energy loss spectroscopy (EELS). EELS shows that the OH group of chlorophenol is dissociated on Cu(110) and that the molecule is bonded nearly flat to the surface via an O atom, with the Cl group intact. We demonstrate controlled contact of an STM tip to the “available” Cl group and lift-up of the molecule while it is anchored to the surface viamore » an O atom. The asymmetric bonding motifs of the molecule to the electrodes allow for reversible control of the junction.« less
Triple Junction Reorganizations: A Mechanism for the Initiation of the Great Pacific Fractures Zones
NASA Astrophysics Data System (ADS)
Pockalny, R. A.; Larson, R. L.; Grindlay, N. R.
2001-12-01
There are two general explanations for the initiation of oceanic transform faults that eventually evolve into fracture zones: transforms inherited from continental break-up and transforms acquired in response to a change in plate motions. These models are sufficient to explain the fracture zones in oceans formed by continental break-up. However, neither model accounts for the initiation of the large-offset, great Pacific fracture zones that characterized the Pacific-Farallon plate boundary prior to 25 Ma. Primarily, these models are unable to explain why the initial age of these fracture zones becomes progressively younger from the Mendocino fracture zone (\\~{ } 160 Ma) southward down to the Resolution FZ (\\~{ }84 Ma). We propose a new transform initiation mechanism for the great Pacific fracture zones, which is intimately tied to tectonic processes at triple junctions and directly related to the growth of the Pacific Plate. Recently acquired multibeam bathymetry and marine geophysics data collected along Pandora's Escarpment in the southwestern Pacific have identified the escarpment as the trace of the Pacific-Farallon-Phoenix triple junction on the Pacific Plate. Regional changes in the trend of the triple junction trace between 84-121 Ma roughly coincide with the initiation of the Marquesas, Austral and Resolution fracture zones. Bathymetry and backscatter data from the projected intersections of these fracture zones with the triple junction trace identify several anomalous structures that suggest tectonic reorganizations of the triple junction. We believe this reorganization created the initial transform fault(s) that ultimately became the large-offset, great Pacific fracture zones. Several possible mechanisms for initiating the transform faults are explored including microplate formation, ridge-tip propagation, and spontaneous transform fault formation.
Matsusaki, Michiya; Hikimoto, Daichi; Nishiguchi, Akihiro; Kadowaki, Koji; Ohura, Kayoko; Imai, Teruko; Akashi, Mitsuru
2015-02-13
Caco-2, human colon carcinoma cell line, has been widely used as a model system for intestinal epithelial permeability because Caco-2 cells express tight-junctions, microvilli, and a number of enzymes and transporters characteristic of enterocytes. However, the functional differentiation and polarization of Caco-2 cells to express sufficient tight-junctions (a barrier) usually takes over 21 days in culture. This may be due to the cell culture environment, for example inflammation induced by plastic petri dishes. Three-dimensional (3D) sufficient cell microenvironments similar to in vivo natural conditions (proteins and cells), will promote rapid differentiation and higher functional expression of tight junctions. Herein we report for the first time an enhancement in tight-junction formation by 3D-cultures of Caco-2 cells on monolayered (1L) and eight layered (8L) normal human dermal fibroblasts (NHDF). Trans epithelial electric resistance (TEER) of Caco-2 cells was enhanced in the 3D-cultures, especially 8L-NHDF tissues, depending on culture times and only 10 days was enough to reach the same TEER value of Caco-2 monolayers after a 21 day incubation. Relative mRNA expression of tight-junction proteins of Caco-2 cells on 3D-cultures showed higher values than those in monolayer structures. Transporter gene expression patterns of Caco-2 cells on 3D-constructs were almost the same as those of Caco-2 monolayers, suggesting that there was no effect of 3D-cultures on transporter protein expression. The expression correlation between carboxylesterase 1 and 2 in 3D-cultures represented similar trends with human small intestines. The results of this study clearly represent a valuable application of 3D-Caco-2 tissues for pharmaceutical applications. Copyright © 2015 Elsevier Inc. All rights reserved.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Geha, Marla; Brown, Thomas M.; Tumlinson, Jason
2013-07-01
We present constraints on the stellar initial mass function (IMF) in two ultra-faint dwarf (UFD) galaxies, Hercules and Leo IV, based on deep Hubble Space Telescope Advanced Camera for Surveys imaging. The Hercules and Leo IV galaxies are extremely low luminosity (M{sub V} = -6.2, -5.5), metal-poor (([Fe/H]) = -2.4, -2.5) systems that have old stellar populations (>11 Gyr). Because they have long relaxation times, we can directly measure the low-mass stellar IMF by counting stars below the main-sequence turnoff without correcting for dynamical evolution. Over the stellar mass range probed by our data, 0.52-0.77 M{sub Sun }, the IMFmore » is best fit by a power-law slope of {alpha}= 1.2{sub -0.5}{sup +0.4} for Hercules and {alpha} = 1.3 {+-} 0.8 for Leo IV. For Hercules, the IMF slope is more shallow than a Salpeter ({alpha} = 2.35) IMF at the 5.8{sigma} level, and a Kroupa ({alpha} = 2.3 above 0.5 M{sub Sun }) IMF slope at 5.4{sigma} level. We simultaneously fit for the binary fraction, f{sub binary}, finding f{sub binary}= 0.47{sup +0.16}{sub -0.14} for Hercules, and 0.47{sup +0.37}{sub -0.17} for Leo IV. The UFD binary fractions are consistent with that inferred for Milky Way stars in the same mass range, despite very different metallicities. In contrast, the IMF slopes in the UFDs are shallower than other galactic environments. In the mass range 0.5-0.8 M{sub Sun }, we see a trend across the handful of galaxies with directly measured IMFs such that the power-law slopes become shallower (more bottom-light) with decreasing galactic velocity dispersion and metallicity. This trend is qualitatively consistent with results in elliptical galaxies inferred via indirect methods and is direct evidence for IMF variations with galactic environment.« less
Ruggeri, Marco; Major, James C.; McKeown, Craig; Knighton, Robert W.; Puliafito, Carmen A.
2010-01-01
Purpose. To reveal three-dimensional (3-D) information about the retinal structures of birds of prey in vivo. Methods. An ultra-high resolution spectral-domain optical coherence tomography (SD-OCT) system was built for in vivo imaging of retinas of birds of prey. The calibrated imaging depth and axial resolution of the system were 3.1 mm and 2.8 μm (in tissue), respectively. 3-D segmentation was performed for calculation of the retinal nerve fiber layer (RNFL) map. Results. High-resolution OCT images were obtained of the retinas of four species of birds of prey: two diurnal hawks (Buteo platypterus and Buteo brachyurus) and two nocturnal owls (Bubo virginianus and Strix varia). These images showed the detailed retinal anatomy, including the retinal layers and the structure of the deep and shallow foveae. The calculated thickness map showed the RNFL distribution. Traumatic injury to one bird's retina was also successfully imaged. Conclusions. Ultra-high resolution SD-OCT provides unprecedented high-quality 2-D and 3-D in vivo visualization of the retinal structures of birds of prey. SD-OCT is a powerful imaging tool for vision research in birds of prey. PMID:20554605
Neutron-transmutation-doped germanium bolometers
NASA Technical Reports Server (NTRS)
Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.
1983-01-01
Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.
Ameen, Sadia; Akhtar, M Shaheer; Seo, Hyung-Kee; Shin, Hyung Shik
2015-07-30
Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150-200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I-V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I-V behavior was observed without m-dihydroxybenzene chemical. This non-linear I-V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I-V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM(-1)cm(-2), good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s). Copyright © 2015 Elsevier B.V. All rights reserved.
Shirogane, Yuta; Takeda, Makoto; Tahara, Maino; Ikegame, Satoshi; Nakamura, Takanori; Yanagi, Yusuke
2010-07-02
Measles virus (MV), an enveloped negative-strand RNA virus, remains a major cause of morbidity and mortality in developing countries. MV predominantly infects immune cells by using signaling lymphocyte activation molecule (SLAM; also called CD150) as a receptor, but it also infects polarized epithelial cells, forming tight junctions in a SLAM-independent manner. Although the ability of MV to infect polarized epithelial cells is thought to be important for its transmission, the epithelial cell receptor for MV has not been identified. A transcriptional repressor, Snail, induces epithelial-mesenchymal transition (EMT), in which epithelial cells lose epithelial cell phenotypes, such as adherens and tight junctions. In this study, EMT was induced by expressing Snail in a lung adenocarcinoma cell line, II-18, which is highly susceptible to wild-type MV. Snail-expressing II-18 cells lost adherens and tight junctions. Microarray analysis confirmed the induction of EMT in II-18 cells and suggested a novel function of Snail in protein degradation and distribution. Importantly, wild-type MV no longer entered EMT-induced II-18 cells, suggesting that the epithelial cell receptor is down-regulated by the induction of EMT. Other polarized cell lines, NCI-H358 and HT-29, also lost susceptibility to wild-type MV when EMT was induced. However, the complete formation of tight junctions rather reduced MV entry into HT-29 cells. Taken together, these data suggest that the unidentified epithelial cell receptor for MV is involved in the formation of epithelial intercellular junctions.
NASA Astrophysics Data System (ADS)
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin
2011-12-01
Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy.
Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno
2016-09-23
Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.
Vedula, Pavan; Cruz, Lissette A; Gutierrez, Natasha; Davis, Justin; Ayee, Brian; Abramczyk, Rachel; Rodriguez, Alexis J
2016-06-30
Quantifying multi-molecular complex assembly in specific cytoplasmic compartments is crucial to understand how cells use assembly/disassembly of these complexes to control function. Currently, biophysical methods like Fluorescence Resonance Energy Transfer and Fluorescence Correlation Spectroscopy provide quantitative measurements of direct protein-protein interactions, while traditional biochemical approaches such as sub-cellular fractionation and immunoprecipitation remain the main approaches used to study multi-protein complex assembly/disassembly dynamics. In this article, we validate and quantify multi-protein adherens junction complex assembly in situ using light microscopy and Fluorescence Covariance Analysis. Utilizing specific fluorescently-labeled protein pairs, we quantified various stages of adherens junction complex assembly, the multiprotein complex regulating epithelial tissue structure and function following de novo cell-cell contact. We demonstrate: minimal cadherin-catenin complex assembly in the perinuclear cytoplasm and subsequent localization to the cell-cell contact zone, assembly of adherens junction complexes, acto-myosin tension-mediated anchoring, and adherens junction maturation following de novo cell-cell contact. Finally applying Fluorescence Covariance Analysis in live cells expressing fluorescently tagged adherens junction complex proteins, we also quantified adherens junction complex assembly dynamics during epithelial monolayer formation.
Cdc42 regulates junctional actin but not cell polarization in the Caenorhabditis elegans epidermis
Zilberman, Yuliya; Abrams, Joshua; Anderson, Dorian C.
2017-01-01
During morphogenesis, adherens junctions (AJs) remodel to allow changes in cell shape and position while preserving adhesion. Here, we examine the function of Rho guanosine triphosphatase CDC-42 in AJ formation and regulation during Caenorhabditis elegans embryo elongation, a process driven by asymmetric epidermal cell shape changes. cdc-42 mutant embryos arrest during elongation with epidermal ruptures. Unexpectedly, we find using time-lapse fluorescence imaging that cdc-42 is not required for epidermal cell polarization or junction assembly, but rather is needed for proper junctional actin regulation during elongation. We show that the RhoGAP PAC-1/ARHGAP21 inhibits CDC-42 activity at AJs, and loss of PAC-1 or the interacting linker protein PICC-1/CCDC85A-C blocks elongation in embryos with compromised AJ function. pac-1 embryos exhibit dynamic accumulations of junctional F-actin and an increase in AJ protein levels. Our findings identify a previously unrecognized molecular mechanism for inhibiting junctional CDC-42 to control actin organization and AJ protein levels during epithelial morphogenesis. PMID:28903999
Numerical Investigation of Liquid Carryover in T-Junction with Different Diameter Ratios
NASA Astrophysics Data System (ADS)
Pao, William; Sam, Ban; Saieed, Ahmed; Tran, Cong Minh
2018-03-01
In offshore Malaysia, T-junction is installed at the production header as a compact separator to tap produced gas from reservoir as fuel gas for power generation. However, excessive liquid carryover in T-junction presents a serious operational issue because it trips the whole production platform. The primary objective of present study is to numerically investigate the liquid carryover due to formation of slug, subsequently its liquid carryover at different diameter ratio. The analyses were carried out on a model with 0.0254 m (1 inch) diameter horizontal main arm and a vertically upward side arm using Volume of Fluid Method. Three different sides to main arm diameter ratio of 1.0, 0.5 and 0.3 were investigated with different gas and liquid superficial velocities. The results showed that, while the general trend is true that smaller diameter ratio T-junction has lesser liquid take off capacity, it has a very high frequency of low liquid carryover threshold. In other words, under slug flow, smaller diameter ratio T-junction is constantly transporting liquid even though at a lesser volume in comparison to regular T-junction.
Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy
NASA Astrophysics Data System (ADS)
Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno
2016-09-01
Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.
NASA Astrophysics Data System (ADS)
Es-Sakhi, Azzedin D.
Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.
Zündorf, Gregor; Kahlert, Stefan; Reiser, Georg
2007-07-01
The beneficial or detrimental role of gap junction communication in the pathophysiology of brain injury is still controversial. We used co-cultures of hippocampal astrocytes and neurons, where we identified homocellular astrocyte-astrocyte and heterocellular astrocyte-neuron coupling by fluorescence recovery after photobleaching, which was decreased by the gap junction blocker carbenoxolone (CBX). In these cultures, we determined the cell type-specific effects of CBX on the excitotoxic damage caused by N-methyl-D-aspartate (NMDA). We determined in both astrocytes and neurons the influence of CBX, alone or together with NMDA challenge, on cytotoxicity using propidium iodide labeling. CBX alone was not cytotoxic, but CBX treatment differentially accelerated the NMDA-induced cell death in both astrocytes and neurons. In addition, we measured mitochondrial potential using rhodamine 123, membrane potential using the oxonol dye bis(1,3-diethylthiobarbituric acid)trimethine oxonol, cytosolic Ca(2+) level using fura-2, and formation of reactive oxygen species (ROS) using dihydroethidium. CBX alone induced neither an intracellular Ca(2+) rise nor a membrane depolarization. However, CBX elicited a mitochondrial depolarization in both astrocytes and neurons and increased the ROS formation in neurons. In contrast, NMDA caused a membrane depolarization in neurons, coinciding with intracellular Ca(2+) rise, but neither mitochondrial depolarization nor ROS production seem to be involved in NMDA-mediated cytotoxicity. Pre-treatment with CBX accelerated the NMDA-induced membrane depolarization and prevented the repolarization of neurons after the NMDA challenge. We hypothesize that these effects are possibly mediated via blockage of gap junctions, and might be involved in the mechanism of CBX-induced acceleration of excitotoxic cell death, whereas the CBX-induced mitochondrial depolarization and ROS formation are not responsible for the increase in cytotoxicity. We conclude that both in astrocytes and neurons gap junctions provide protection against NMDA-induced cytotoxicity.
DOE Office of Scientific and Technical Information (OSTI.GOV)
J. M. Capron
2008-05-30
The 100-F-44:2 waste site is a steel pipeline that was discovered in a junction box during confirmatory sampling of the 100-F-26:4 pipeline from December 2004 through January 2005. The 100-F-44:2 pipeline feeds into the 100-F-26:4 subsite vitrified clay pipe (VCP) process sewer pipeline from the 108-F Biology Laboratory at the junction box. In accordance with this evaluation, the confirmatory sampling results support a reclassification of this site to No Action. The current site conditions achieve the remedial action objectives and the corresponding remedial action goals established in the Remaining Sites ROD. The results of confirmatory sampling show that residual contaminantmore » concentrations do not preclude any future uses and allow for unrestricted use of shallow zone soils. The results also demonstrate that residual contaminant concentrations are protective of groundwater and the Columbia River.« less
NASA Astrophysics Data System (ADS)
Materna, Kathryn; Taira, Taka'aki; Bürgmann, Roland
2018-01-01
The Mendocino Triple Junction (MTJ), at the northern terminus of the San Andreas Fault system, is an actively deforming plate boundary region with poorly constrained estimates of seismic coupling on most offshore fault surfaces. Characteristically repeating earthquakes provide spatial and temporal descriptions of aseismic creep at the MTJ, including on the oceanic transform Mendocino Fault Zone (MFZ) as it subducts beneath North America. Using a dataset of earthquakes from 2008 to 2017, we find that the easternmost segment of the MFZ displays creep during this period at about 65% of the long-term slip rate. We also find creep at slower rates on the shallower strike-slip interface between the Pacific plate and the North American accretionary wedge, as well as on a fault that accommodates Gorda subplate internal deformation. After a nearby
Development and fabrication of a high current, fast recovery power diode
NASA Technical Reports Server (NTRS)
Berman, A. H.; Balodis, V.; Devance, D. C.; Gaugh, C. E.; Karlsson, E. A.
1983-01-01
A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.
TEM verification of the <111>-type 4-arm multi-junction in [001]-Mo single crystals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hsiung, L
2005-03-14
To investigate and verify the formation of <111>-type 4-arm multi-junction by the dislocation reaction of 1/2[111] [b1] + 1/2[{bar 1}1{bar 1}] [b2] + 1/2[{bar 1}{bar 1}1] [b3] = 1/2[{bar 1}11] [b4], which has recently been discovered through computer simulations conducted by Vasily Bulatov and his colleagues.
Carbon Nanotubes: Molecular Electronic Components
NASA Technical Reports Server (NTRS)
Srivastava, Deepak; Saini, Subhash; Menon, Madhu
1997-01-01
The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale molecular electronic networks. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal graphene sheet, more complex joints require other mechanisms. In this work we explore structural characteristics of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme. The study of pi-electron local densities of states (LDOS) of these junctions reveal many interesting features, most prominent among them being the defect-induced states in the gap.
Solar cell circuit and method for manufacturing solar cells
NASA Technical Reports Server (NTRS)
Mardesich, Nick (Inventor)
2010-01-01
The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.
Level of processing modulates the neural correlates of emotional memory formation
Ritchey, Maureen; LaBar, Kevin S.; Cabeza, Roberto
2010-01-01
Emotion is known to influence multiple aspects of memory formation, including the initial encoding of the memory trace and its consolidation over time. However, the neural mechanisms whereby emotion impacts memory encoding remain largely unexplored. The present study employed a levels-of-processing manipulation to characterize the impact of emotion on encoding with and without the influence of elaborative processes. Participants viewed emotionally negative, neutral, and positive scenes under two conditions: a shallow condition focused on the perceptual features of the scenes and a deep condition that queried their semantic meaning. Recognition memory was tested 2 days later. Results showed that emotional memory enhancements were greatest in the shallow condition. FMRI analyses revealed that the right amygdala predicted subsequent emotional memory in the shallow more than deep condition, whereas the right ventrolateral prefrontal cortex demonstrated the reverse pattern. Furthermore, the association of these regions with the hippocampus was modulated by valence: the amygdala-hippocampal link was strongest for negative stimuli, whereas the prefrontal-hippocampal link was strongest for positive stimuli. Taken together, these results suggest two distinct activation patterns underlying emotional memory formation: an amygdala component that promotes memory during shallow encoding, especially for negative information, and a prefrontal component that provides extra benefits during deep encoding, especially for positive information. PMID:20350176
Level of processing modulates the neural correlates of emotional memory formation.
Ritchey, Maureen; LaBar, Kevin S; Cabeza, Roberto
2011-04-01
Emotion is known to influence multiple aspects of memory formation, including the initial encoding of the memory trace and its consolidation over time. However, the neural mechanisms whereby emotion impacts memory encoding remain largely unexplored. The present study used a levels-of-processing manipulation to characterize the impact of emotion on encoding with and without the influence of elaborative processes. Participants viewed emotionally negative, neutral, and positive scenes under two conditions: a shallow condition focused on the perceptual features of the scenes and a deep condition that queried their semantic meaning. Recognition memory was tested 2 days later. Results showed that emotional memory enhancements were greatest in the shallow condition. fMRI analyses revealed that the right amygdala predicted subsequent emotional memory in the shallow more than deep condition, whereas the right ventrolateral PFC demonstrated the reverse pattern. Furthermore, the association of these regions with the hippocampus was modulated by valence: the amygdala-hippocampal link was strongest for negative stimuli, whereas the prefrontal-hippocampal link was strongest for positive stimuli. Taken together, these results suggest two distinct activation patterns underlying emotional memory formation: an amygdala component that promotes memory during shallow encoding, especially for negative information, and a prefrontal component that provides extra benefits during deep encoding, especially for positive information.
Planar Cell Polarity Pathway Regulates Nephrin Endocytosis in Developing Podocytes
Babayeva, Sima; Rocque, Brittany; Aoudjit, Lamine; Zilber, Yulia; Li, Jane; Baldwin, Cindy; Kawachi, Hiroshi; Takano, Tomoko; Torban, Elena
2013-01-01
The noncanonical Wnt/planar cell polarity (PCP) pathway controls a variety of cell behaviors such as polarized protrusive cell activity, directional cell movement, and oriented cell division and is crucial for the normal development of many tissues. Mutations in the PCP genes cause malformation in multiple organs. Recently, the PCP pathway was shown to control endocytosis of PCP and non-PCP proteins necessary for cell shape remodeling and formation of specific junctional protein complexes. During formation of the renal glomerulus, the glomerular capillary becomes enveloped by highly specialized epithelial cells, podocytes, that display unique architecture and are connected via specialized cell-cell junctions (slit diaphragms) that restrict passage of protein into the urine; podocyte differentiation requires active remodeling of cytoskeleton and junctional protein complexes. We report here that in cultured human podocytes, activation of the PCP pathway significantly stimulates endocytosis of the core slit diaphragm protein, nephrin, via a clathrin/β-arrestin-dependent endocytic route. In contrast, depletion of the PCP protein Vangl2 leads to an increase of nephrin at the cell surface; loss of Vangl2 functions in Looptail mice results in disturbed glomerular maturation. We propose that the PCP pathway contributes to podocyte development by regulating nephrin turnover during junctional remodeling as the cells differentiate. PMID:23824190
Vespa, Alisa; Darmon, Alison J; Turner, Christopher E; D'Souza, Sudhir J A; Dagnino, Lina
2003-03-28
Integrin complexes are necessary for proper proliferation and differentiation of epidermal keratinocytes. Differentiation of these cells is accompanied by down-regulation of integrins and focal adhesions as well as formation of intercellular adherens junctions through E-cadherin homodimerization. A central component of integrin adhesion complexes is integrin-linked kinase (ILK), which can induce loss of E-cadherin expression and epithelial-mesenchymal transformation when ectopically expressed in intestinal and mammary epithelia. In cultured primary mouse keratinocytes, we find that ILK protein levels are independent of integrin expression and signaling, since they remain constant during Ca(2+)-induced differentiation. In contrast, keratinocyte differentiation is accompanied by marked reduction in kinase activity in ILK immunoprecipitates and altered ILK subcellular distribution. Specifically, ILK distributes in close apposition to actin fibers along intercellular junctions in differentiated but not in undifferentiated keratinocytes. ILK localization to cell-cell borders occurs independently of integrin signaling and requires Ca(2+) as well as an intact actin cytoskeleton. Further, and in contrast to what is observed in other epithelial cells, ILK overexpression in differentiated keratinocytes does not promote E-cadherin down-regulation and epithelial-mesenchymal transition. Thus, novel tissue-specific mechanisms control the formation of ILK complexes associated with cell-cell junctions in differentiating murine epidermal keratinocytes.
Oubaha, Malika; Lin, Michelle I.; Margaron, Yoran; Filion, Dominic; Price, Emily N.; Zon, Leonard I.; Côté, Jean-François
2012-01-01
Angiogenic sprouting requires that cell-cell contacts be maintained during migration of endothelial cells. Angiopoietin-1 (Ang-1) and vascular endothelial growth factor act oppositely on endothelial cell junctions. We found that Ang-1 promotes collective and directional migration and, in contrast to VEGF, induces the formation of a complex formed of atypical protein kinase C (PKC)-ζ and β-catenin at cell-cell junctions and at the leading edge of migrating endothelial cells. This complex brings Par3, Par6, and adherens junction proteins at the front of migrating cells to locally activate Rac1 in response to Ang-1. The colocalization of PKCζ and β-catenin at leading edge along with PKCζ-dependent stabilization of cell-cell contacts promotes directed and collective endothelial cell migration. Consistent with these results, down-regulation of PKCζ in endothelial cells alters Ang-1–induced sprouting in vitro and knockdown in developing zebrafish results in intersegmental vessel defects caused by a perturbed directionality of tip cells and by loss of cell contacts between tip and stalk cells. These results reveal that PKCζ and β-catenin function in a complex at adherens junctions and at the leading edge of migrating endothelial cells to modulate collective and directional migration during angiogenesis. PMID:22936663
Streets, Andrew J.; Wagner, Bart E.; Harris, Peter C.; Ward, Christopher J.; Ong, Albert C. M.
2009-01-01
Summary Autosomal dominant polycystic kidney disease (ADPKD) is the most common inherited human renal disease and is caused by mutations in two genes, PKD1 (85%) and PKD2 (15%). Cyst epithelial cells are characterised by a complex cellular phenotype including changes in proliferation, apoptosis, basement membrane composition and apicobasal polarity. Since polycystin 1 (PC1), the PKD1 protein, has been located in the basolateral membrane of kidney epithelial cells, we hypothesised that it might have a key role in mediating or stabilising cell-cell interactions. In non-ciliated L929 cells, stable or transient surface expression of the PC1 extracellular domain was sufficient to confer an adhesive phenotype and stimulate junction formation. In MDCK cells, we found that PC1 was recruited to the lateral membranes coincident with E-cadherin within 30 minutes after a `calcium switch'. Recruitment of both proteins was significantly delayed when cells were treated with a PC1 blocking antibody raised to the PKD domains. Finally, PC1 and E-cadherin could be coimmunoprecipitated together from MDCK cells. We conclude that PC1 has a key role in initiating junction formation via initial homophilic interactions and facilitates junction assembly and the establishment of apicobasal polarity by E-cadherin recruitment. PMID:19351715
Ultrastructural blood-brain barrier alterations and edema formation in acute spinal cord trauma.
Goodman, J H; Bingham, W G; Hunt, W E
1976-04-01
Endothelial changes leading to edema formation are examined in the primate spinal cord (Macaca mulatta) following a lesion created by a 20-gm weight falling 15 cm onto the exposed dura. Intravascular perfusion of a paraformaldehydeglutaraldehyde solution followed by carbon black provides adequate fixation of vascular structures and glial elements. Myelin is poorly preserved. Ultrastructural alterations of the blood-brain barrier consist of loss of integrity of the endothelial tight junctions. Edema caused by vascular disruption and parenchymatous extravasation of intravascular contents is observed along with glial swelling. Interglial gap junctions persist in areas of marked cellular seperation and do not impede the migration of edema fluid.
All-spinel oxide Josephson junctions for high-efficiency spin filtering.
Mesoraca, S; Knudde, S; Leitao, D C; Cardoso, S; Blamire, M G
2018-01-10
Obtaining high efficiency spin filtering at room temperature using spinel ferromagnetic tunnel barriers has been hampered by the formation of antiphase boundaries due to their difference in lattice parameters between barrier and electrodes. In this work we demonstrate the use of LiTi 2 O 4 thin films as electrodes in an all-spinel oxide CoFe 2 O 4 -based spin filter devices. These structures show nearly perfect epitaxy maintained throughout the structure and so minimise the potential for APBs formation. The LiTi 2 O 4 in these devices is superconducting and so measurements at low temperature have been used to explore details of the tunnelling and Josephson junction behaviour.
Pointis, Georges; Gilleron, Jérome; Carette, Diane; Segretain, Dominique
2010-01-01
Spermatogenesis is a highly regulated process of germ cell proliferation and differentiation, starting from spermatogonia to spermatocytes and giving rise to spermatids, the future spermatozoa. In addition to endocrine regulation, testicular cell–cell interactions are essential for spermatogenesis. This precise control is mediated through paracrine/autocrine pathways, direct intercellular contacts and through intercellular communication channels, consisting of gap junctions and their constitutive proteins, the connexins. Gap junctions are localized between adjacent Leydig cells, between Sertoli cells and between Sertoli cells and specific germ cells. This review focuses on the distribution of connexins within the seminiferous epithelium, their participation in gap junction channel formation, the control of their expression and the physiological relevance of these junctions in both the Sertoli–Sertoli cell functional synchronization and the Sertoli–germ cell dialogue. In this review, we also discuss the potential implication of disrupted connexin in testis cancer, since impaired expression of connexin has been described as a typical feature of tumoral proliferation. PMID:20403873
NASA Astrophysics Data System (ADS)
Liu, Xiang; serhir, mohammed; kameni, abelin; lambert, marc; pichon, lionel
2016-04-01
For a company like Electricity De France (EDF), being able to detect accurately using non-destructive methods the position of the buried junction between two underground cables is a crucial issue. The junction is the linking part where most maintenance operations are carried out. The challenge of this work is to conduct a feasibility study to confirm or deny the relevance of Ground Penetrating Radar (GPR) to detect these buried junctions in their actual environment against clutter. Indeed, the cables are buried in inhomogeneous medium at around 80cm deep. To do this, the study is conducted in a numerical environment. We use the 3D simulation software CST MWS to model a GPR scenario. In this simulation, we place the already optimized bowtie antennas operating in the frequency band [0.5 GHz - 3 GHz] in front of wet soil (dispersive) and dry soil where the underground cable is placed at 80cm deep. We collect the amplitude and phase of the reflected waves in order to detect the contrast provoked by the geometric dimensions variation of the cable [1] (diameter of the cable is 48mm and the diameter of the junction 74mm). The use of an ultra-wideband antenna is necessary to reconcile resolution and penetration of electromagnetic waves in the medium to be characterized. We focus on the performance of the GPR method according to the characteristics of the surrounding medium in which the electric cables are buried, the polarization of the Tx and Rx antennas. The experimental measurement collected in the EDF site will be presented. The measured data are processed using the clutter reduction method based on digital filtering [2]. We aim at showing that using the developed bowtie antennas that the GPR technique is well adapted for the cable junction localization even in cluttered environment. References [1] D. J. Daniels, "Surface-Penetrating Radar", London, IEE 1996. [2] Potin, D.; Duflos, E.; Vanheeghe, P., "Landmines Ground-Penetrating Radar Signal Enhancement by Digital Filtering," in Geoscience and Remote Sensing, IEEE Transactions on , vol.44, no.9, pp.2393-2406, Sept. 2006 .
Godfrey, N.J.; Meltzer, A.S.; Klemperer, S.L.; Trehu, A.M.; Leitner, B.; Clarke, S.H.; Ondrus, A.
1998-01-01
The Gorda Escarpment is a north facing scarp immediately south of the Mendocino transform fault (the Gorda/Juan de Fuca-Pacific plate boundary) between 126??W and the Mendocino triple junction. It elevates the seafloor at the northern edge of the Vizcaino block, part of the Pacific plate, ??? 1.5 km above the seafloor of the Gorda/Juan de Fuca plate to the north. Stratigraphy interpreted from multichannel seismic data across and close to the Gorda Escarpment suggests that the escarpment is a relatively recent pop-up feature caused by north-south compression across the plate boundary. Close to 126??W. the Vizcaino block acoustic basement shallows and is overlain by sediments that thin north toward the Gorda Escarpment. These sediments are tilted south and truncated at the seafloor. By contrast, in a localized region at the eastern end of the Gorda Escarpment, close to the Mendocino triple junction, the top of acoustic basement dips north and is overlain by a 2-km-thick wedge of pre-11 Ma sedimentary rocks that thickens north, toward the Gorda Escarpment. This wedge of sediments is restricted to the northeast corner of the Vizcaino block. Unless the wedge of sediments was a preexisting feature on the Vizcaino block before it was transferred from the North American to the Pacific plate, the strong spatial correlation between the sedimentary wedge and the triple junction suggests the entire Vizcaino block, with the San Andreas at its eastern boundary, has been part of the Pacific plate since significantly before 11 Ma.
Spatiotemporal Changes of Cyanobacterial Bloom in Large Shallow Eutrophic Lake Taihu, China
Qin, Boqiang; Yang, Guijun; Ma, Jianrong; Wu, Tingfeng; Li, Wei; Liu, Lizhen; Deng, Jianming; Zhou, Jian
2018-01-01
Lake Taihu is a large shallow eutrophic lake with frequent recurrence of cyanobacterial bloom which has high variable distribution in space and time. Based on the field observations and remote sensing monitoring of cyanobacterial bloom occurrence, in conjunction with laboratory controlled experiments of mixing effects on large colony formation and colonies upward moving velocity measurements, it is found that the small or moderate wind-induced disturbance would increase the colonies size and enable it more easily to overcome the mixing and float to water surface rapidly during post-disturbance. The proposed mechanism of wind induced mixing on cyanobacterial colony enlargement is associated with the presence of the extracellular polysaccharide (EPS) which increased the size and buoyancy of cyanobacteria colonies and promote the colonies aggregate at the water surface to form bloom. Both the vertical movement and horizontal migration of cyanobacterial colonies were controlled by the wind induced hydrodynamics. Because of the high variation of wind and current coupling with the large cyanobacterial colony formation make the bloom occurrence as highly mutable in space and time. This physical factor determining cyanobacterial bloom formation in the large shallow lake differ from the previously documented light-mediated bloom formation dynamics. PMID:29619011
Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods
NASA Astrophysics Data System (ADS)
Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan
2018-02-01
A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.
Electro-refractive photonic device
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zortman, William A.; Watts, Michael R.
2015-06-09
The various technologies presented herein relate to phase shifting light to facilitate any of light switching, modulation, amplification, etc. Structures are presented where a second layer is juxtaposed between a first layer and a third layer with respective doping facilitating formation of p-n junctions at the interface between the first layer and the second layer, and between the second layer and the third layer. Application of a bias causes a carrier concentration change to occur at the p-n junctions which causes a shift in the effective refractive index per incremental change in an applied bias voltage. The effective refractive indexmore » enhancement can occur in both reverse bias and forward bias. The structure can be incorporated into a waveguide, an optical resonator, a vertical junction device, a horizontal junction device, a Mach-Zehnder interferometer, a tuneable optical filter, etc.« less
Bernadskaya, Yelena Y.; Patel, Falshruti B.; Hsu, Hsiao-Ting; Soto, Martha C.
2011-01-01
It has been proposed that Arp2/3, which promotes nucleation of branched actin, is needed for epithelial junction initiation but is less important as junctions mature. We focus here on how Arp2/3 contributes to the Caenorhabditis elegans intestinal epithelium and find important roles for Arp2/3 in the maturation and maintenance of junctions in embryos and adults. Electron microscope studies show that embryos depleted of Arp2/3 form apical actin-rich microvilli and electron-dense apical junctions. However, whereas apical/basal polarity initiates, apical maturation is defective, including decreased apical F-actin enrichment, aberrant lumen morphology, and reduced accumulation of some apical junctional proteins, including DLG-1. Depletion of Arp2/3 in adult animals leads to similar intestinal defects. The DLG-1/AJM-1 apical junction proteins, and the ezrin–radixin–moesin homologue ERM-1, a protein that connects F-actin to membranes, are required along with Arp2/3 for apical F-actin enrichment in embryos, whereas cadherin junction proteins are not. Arp2/3 affects the subcellular distribution of DLG-1 and ERM-1. Loss of Arp2/3 shifts both ERM-1 and DLG-1 from pellet fractions to supernatant fractions, suggesting a role for Arp2/3 in the distribution of membrane-associated proteins. Thus, Arp2/3 is required as junctions mature to maintain apical proteins associated with the correct membranes. PMID:21697505
Tong, Xuhui; Han, Xi; Yu, Binbin; Yu, Meiling; Jiang, Guojun; Ji, Jie; Dong, Shuying
2015-01-01
Platinum agents are widely used in the chemotherapy of testicular cancer. However, adverse reactions and resistance to such agents have limited their application in antineoplastic treatment. The aim of the present study was to determine the role of gap junction intercellular communication (GJIC) composed of Cx43 on oxaliplatin‑induced survival/apoptosis in mouse leydig normal and cancer cells using MTT, Annexin V/PI double staining assays and western blot analysis. The results showed that GJIC exerted opposite effects on the mouse leydig cancer (I-10) and normal (TM3) cell apoptosis induced by oxaliplatin. In leydig cancer cells, survival of cells exposed to oxaliplatin was substantially reduced when gap junctions formed as compared to no gap junctions. Pharmacological inhibition of gap junctions by oleamide and 18-α-glycyrrhetinic acid resulted in enhanced survival/decreased apoptosis while enhancement of gap junctions by retinoic acid led to decreased survival/increased apoptosis. These effects occurred only in high‑density cultures (gap junction formed), while the pharmacological modulations had no effects when there was no opportunity for gap junction formation. Notably, GJIC played an opposite (protective) role in normal leydig cells survival/apoptosis following exposure to oxaliplatin. Furthermore, this converse oxaliplatin‑inducing apoptosis exerted through the functional gap junction was correlated with the mitochondrial pathway‑related protein Bcl-2/Bax and caspase‑3/9. These results suggested that in testicular leydig normal/cancer cells, GJIC plays an opposite role in oxaliplatin‑induced apoptosis via the mitochondrial pathway.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jiang, C. S.; Li, Z. G.; Moutinho, H. R.
2012-06-01
We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 840 degrees, and 930 degrees C, which results in actual cell temperatures ~100 degrees C lower than the setting temperature and the three cells being under-, optimal-, and over-fired. Wemore » found that the uniformity of the junction beneath the Ag contact was significantly degraded by the over-firing, whereas the junction retained good uniformity with the optimal- and under-fire temperatures. Further, Ag crystallites with widely distributed sizes from <100 nm to several μm were found at the Ag/Si interface of the over-fired cell. Large crystallites were imaged as protrusions into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of the junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent recrystallization with incorporation of impurities in the Ag paste and with formation of crystallographic defects during quenching.« less
Starich, Todd A.; Hall, David H.; Greenstein, David
2014-01-01
In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma–germline interactions in C. elegans. PMID:25195067
Meyer, Arndt; Hilgen, Gerrit; Dorgau, Birthe; Sammler, Esther M.; Weiler, Reto; Monyer, Hannah; Dedek, Karin; Hormuzdi, Sheriar G.
2014-01-01
ABSTRACT Electrical synapses (gap junctions) rapidly transmit signals between neurons and are composed of connexins. In neurons, connexin36 (Cx36) is the most abundant isoform; however, the mechanisms underlying formation of Cx36-containing electrical synapses are unknown. We focus on homocellular and heterocellular gap junctions formed by an AII amacrine cell, a key interneuron found in all mammalian retinas. In mice lacking native Cx36 but expressing a variant tagged with enhanced green fluorescent protein at the C-terminus (KO-Cx36-EGFP), heterocellular gap junctions formed between AII cells and ON cone bipolar cells are fully functional, whereas homocellular gap junctions between two AII cells are not formed. A tracer injected into an AII amacrine cell spreads into ON cone bipolar cells but is excluded from other AII cells. Reconstruction of Cx36–EGFP clusters on an AII cell in the KO-Cx36-EGFP genotype confirmed that the number, but not average size, of the clusters is reduced – as expected for AII cells lacking a subset of electrical synapses. Our studies indicate that some neurons exhibit at least two discriminatory mechanisms for assembling Cx36. We suggest that employing different gap-junction-forming mechanisms could provide the means for a cell to regulate its gap junctions in a target-cell-specific manner, even if these junctions contain the same connexin. PMID:24463820
Tang, Yidan; Lu, Baiyang; Zhu, Zhentong; Li, Bingling
2018-01-21
The polymerase chain reaction and many isothermal amplifications are able to achieve super gene amplification. Unfortunately, most commonly-used transduction methods, such as dye staining and Taqman-like probing, still suffer from shortcomings including false signals or difficult probe design, or are incompatible with multi-analysis. Here a universal and rational gene detection strategy has been established by translating isothermal amplicons to enzyme-free strand displacement circuits via three-way junction-based remote transduction. An assistant transduction probe was imported to form a partial hybrid with the target single-stranded nucleic acid. After systematic optimization the hybrid could serve as an associative trigger to activate a downstream circuit detector via a strand displacement reaction across the three-way junction. By doing so, the detection selectivity can be double-guaranteed through both amplicon-transducer recognition and the amplicon-circuit reaction. A well-optimized circuit can be immediately applied to a new target detection through simply displacing only 10-12 nt on only one component, according to the target. More importantly, this property for the first time enables multi-analysis and logic-analysis in a single reaction, sharing a single fluorescence reporter. In an applicable model, trace amounts of Cronobacter and Enterobacteria genes have been clearly distinguished from samples with no bacteria or one bacterium, with ultra-high sensitivity and selectivity.
NASA Astrophysics Data System (ADS)
Farge, G.; Delbridge, B. G.; Materna, K.; Johnson, C. W.; Chaussard, E.; Jones, C. E.; Burgmann, R.
2016-12-01
Understanding the role of the Hayward/Calaveras fault junction in major earthquake ruptures in the East San Francisco Bay Area is a major challenge in trying to assess the regional seismic hazard. We use updated GPS velocities, and surface geodetic measurements from both traditional space-based InSAR and the NASA JPL's Uninhabited Aerial Vehicle Synthetic Aperture Radar (UAVSAR) system to quantify the deep long-term interseismic deformation and shallow temporally variable fault creep. Here, we present a large data set of interseismic deformation over the Hayward/Calaveras fault system, combining far-field deformation from 1992-2011 ERS and Envisat InSAR data, near-field deformation from 2009-2016 UAVSAR data and 1997-2016 regional GPS measurements from the Bay Area Velocity Unification model (BAVU4) in both near-field and far field. We perform a joint inversion of the data to obtain the long-term slip on deep through-going dislocations and the distribution of shallow creep on a 3D model of the Hayward and Calaveras faults. Spatially adaptative weights are given to each data set in order to account for its importance in constraining slip at different depths. The coherence and resolution of the UAVSAR data allow us to accurately resolve the near-field fault deformation, thus providing stronger constraints on the location of active strands of the southern Hayward and Calaveras faults and their shallow interseismic creep distribution.
NASA Astrophysics Data System (ADS)
Yang, Hyunsoo
2006-03-01
The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.
Molecular mechanisms of cell-cell spread of intracellular bacterial pathogens.
Ireton, Keith
2013-07-17
Several bacterial pathogens, including Listeria monocytogenes, Shigella flexneri and Rickettsia spp., have evolved mechanisms to actively spread within human tissues. Spreading is initiated by the pathogen-induced recruitment of host filamentous (F)-actin. F-actin forms a tail behind the microbe, propelling it through the cytoplasm. The motile pathogen then encounters the host plasma membrane, forming a bacterium-containing protrusion that is engulfed by an adjacent cell. Over the past two decades, much progress has been made in elucidating mechanisms of F-actin tail formation. Listeria and Shigella produce tails of branched actin filaments by subverting the host Arp2/3 complex. By contrast, Rickettsia forms tails with linear actin filaments through a bacterial mimic of eukaryotic formins. Compared with F-actin tail formation, mechanisms controlling bacterial protrusions are less well understood. However, recent findings have highlighted the importance of pathogen manipulation of host cell-cell junctions in spread. Listeria produces a soluble protein that enhances bacterial protrusions by perturbing tight junctions. Shigella protrusions are engulfed through a clathrin-mediated pathway at 'tricellular junctions'--specialized membrane regions at the intersection of three epithelial cells. This review summarizes key past findings in pathogen spread, and focuses on recent developments in actin-based motility and the formation and internalization of bacterial protrusions.
A Novel Role for Integrin-linked Kinase in Epithelial Sheet Morphogenesis
Vespa, Alisa; D'Souza, Sudhir J.A.; Dagnino, Lina
2005-01-01
Integrin-linked kinase (ILK) is a multidomain protein involved in cell motility and cell-extracellular matrix interactions. ILK is found in integrin-containing focal adhesions in undifferentiated primary epidermal keratinocytes. Induction of keratinocyte differentiation by treatment with Ca2+ triggers formation of cell–cell junctions, loss of focal adhesions, and ILK distribution to cell borders. We now show that Ca2+ treatment of keratinocytes induces rapid (≤1 h) translocation to the cell membrane of the adherens junction (AJ) proteins E-cadherin and β-catenin. This is followed by slower (>6 h) localization of tight junction (TJ) proteins. The kinetics of ILK movement toward the cell periphery mimics that of AJ components, suggesting that ILK plays a role in the early formation of cell–cell contacts. Whereas the N terminus in ILK mediates localization to cell borders, expression of an ILK deletion mutant incapable of localizing to the cell membrane (ILK 191-452) interferes with translocation of E-cadherin/β-catenin to cell borders, precluding Ca2+-induced AJ formation. Cells expressing ILK 191-452 also fail to form TJ and sealed cell–cell borders and do not form epithelial sheets. Thus, we have uncovered a novel role for ILK in epithelial cell–cell adhesion, independent of its well-established role in integrin-mediated adhesion and migration. PMID:15975904
A novel role for integrin-linked kinase in epithelial sheet morphogenesis.
Vespa, Alisa; D'Souza, Sudhir J A; Dagnino, Lina
2005-09-01
Integrin-linked kinase (ILK) is a multidomain protein involved in cell motility and cell-extracellular matrix interactions. ILK is found in integrin-containing focal adhesions in undifferentiated primary epidermal keratinocytes. Induction of keratinocyte differentiation by treatment with Ca(2+) triggers formation of cell-cell junctions, loss of focal adhesions, and ILK distribution to cell borders. We now show that Ca(2+) treatment of keratinocytes induces rapid (
Mantle transition zone beneath northeast China from P-receiver function
NASA Astrophysics Data System (ADS)
Zhang, R.; Wu, Q.
2015-12-01
We used receiver functions to examine lateral topographical variations on the 410- and 660-km beneath northeast China and particularly the Kuril-Japan arc junctions. Compared to other receiver functions studies, our analysis was based on greater station coverage of higher density by combining all recent seismic arrays so far deployed in northeast China. Our image shows that the 410-km is featured by a ~10-20 km uplift extending in the NNE direction beneath some areas of the Quaternary basaltic rocks distributed at Abaga and at Wudalianchi. The Clapeyron slope of the olivine phase transiton at 410-km suggests that the uplift is compatible with a negative thermal anomaly. We also confirm a significant depression of the 660 from the Changbai volcanism in the north to Korea in the south along the NW-SE direction. The depression is also accompanied by an uplift of the 660 to the west. The shallow 660-km discontinuity is also particularly detected beneath the Kuril-Japan arc junctions, while it was not detected before. The thermal anomaly at 410 km depth is most likely a remnant of a detached mantle lithosphere that recently sank to depth, thus providing robust evidence for the source and evolution of these basalts. The depression of the 660-km discontinuity may support that the subducting Pacific slab bends sharply and becomes stagnant when it meets strong resistance at a depth of about 670 km. After accumulation to a great extent the stagnant slab finally penetrates into the lower mantle. Combined with the previous triplicated studies, the shallow 660-km may suggest that descending Pacific slab at its leading and junction edges might be accommodated by a tearing near a depth of 660 km. Acknowledgements. Two liner seismic arrays were deployed by the Institute of Geophysics, China Earthquake Administration. The data of the permanent stations were provided by the Data Management Centre of China, National Seismic Network at the Institute of Geophysics, China Earthquake Administration. We thank the NECESSArray project for providing data, which are downloadable from website of IRIS. This research supported by the NSF of China (Grant Nos. 41474089, 90814013 and 40974061).
Interpreting fluid pressure anomalies in shallow intraplate argillaceous formations
Neuzil, Christopher E.
2015-01-01
Investigations have revealed several instances of apparently isolated highs or lows in pore fluid potential in shallow (< ~ 1 km depth) argillaceous formations in intraplate settings. Formations with the pressure anomalies are distinguished by (1) smaller ratios of hydraulic conductivity to formation thickness and (2) smaller hydraulic (or pressure) diffusivities than those without anomalies. This is consistent with transient Darcian flow caused by strain at rates of ~ 10−17 to 10-16 s-1, by significant perturbing events in the past 104 to 106 annum or by some combination of the two. Plausible causes include erosional downwasting, tectonic strain, and glaciation. In this conceptualization the anomalies provide constraints on formation-scale flow properties, flow history, and local geological forcing in the last 106 annum and in particular indicate zones of low permeability (10−19–10−22 m2) that could be useful for isolation of nuclear waste.
Effect of disorder on longitudinal resistance of a graphene p-n junction in the quantum Hall regime
NASA Astrophysics Data System (ADS)
Chen, Jiang-Chai; Yeung, T. C. Au; Sun, Qing-Feng
2010-06-01
The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the graphene ribbon are not equal. In the presence of suitable disorder, the top-edge and bottom-edge resistances well show the plateau structures in the both unipolar and bipolar regimes, and the plateau values are determined by the Landau filling factors only. These plateau structures are in excellent agreement with the recent experiment. For the unipolar junction, the resistance plateaus emerge in the absence of impurity and they are destroyed by strong disorder. But for the bipolar junction, the resistances are very large without the plateau structures in the clean junction. The disorder can strongly reduce the resistances and leads the formation of the resistance plateaus due to the mixture of the Hall edge states in virtue of the disorder. In addition, the size effect of the junction on the resistances is studied and some extra resistance plateaus are found in the long graphene junction case. This is explained by the fact that only part of the edge states participate in the full mixing.
Basolateral junctions are sufficient to suppress epithelial invasion during Drosophila oogenesis.
Szafranski, Przemyslaw; Goode, Scott
2007-02-01
Epithelial junctions play crucial roles during metazoan evolution and development by facilitating tissue formation, maintenance, and function. Little is known about the role of distinct types of junctions in controlling epithelial transformations leading to invasion of neighboring tissues. Discovering the key junction complexes that control these processes and how they function may also provide mechanistic insight into carcinoma cell invasion. Here, using the Drosophila ovary as a model, we show that four proteins of the basolateral junction (BLJ), Fasciclin-2, Neuroglian, Discs-large, and Lethal-giant-larvae, but not proteins of other epithelial junctions, directly suppress epithelial tumorigenesis and invasion. Remarkably, the expression pattern of Fasciclin-2 predicts which cells will invade. We compared the apicobasal polarity of BLJ tumor cells to border cells (BCs), an epithelium-derived cluster that normally migrates during mid-oogenesis. Both tumor cells and BCs differentiate a lateralized membrane pattern that is necessary but not sufficient for invasion. Independent of lateralization, derepression of motility pathways is also necessary, as indicated by a strong linear correlation between faster BC migration and an increased incidence of tumor invasion. However, without membrane lateralization, derepression of motility pathways is also not sufficient for invasion. Our results demonstrate that spatiotemporal patterns of basolateral junction activity directly suppress epithelial invasion by organizing the cooperative activity of distinct polarity and motility pathways.
Lang, T; Harth, A; Matyschok, J; Binhammer, T; Schultze, M; Morgner, U
2013-01-14
A 2 + 1 dimensional nonlinear pulse propagation model is presented, illustrating the weighting of different effects for the parametric amplification of ultra-broadband spectra in different regimes of energy scaling. Typical features in the distribution of intensity and phase of state-of-the-art OPA-systems can be understood by cascaded spatial and temporal effects.
Observations on the Role of Hydrogen in Facet Formation in Near-alpha Titanium (Preprint)
2011-05-01
using quantitative tilt fractography and electron backscatter diffraction while facet topography was examined using ultra high resolution scanning...quantitative tilt fractography and electron backscatter diffraction while facet topography was examined using ultra high resolution scanning electron...tilt fractography / electron backscatter diffraction (EBSD) technique in which both the crystallographic orientation of the fractured grain and the
NASA Technical Reports Server (NTRS)
1983-01-01
Meniscus coates tests, back junction formation using a new boron containing liquid, tests of various SiO2 and boron containing liquids, pelletized silicon for replenishment during web growth, and ion implantation compatibility/feasibility study are discussed.
Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells.
Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong
2017-03-01
Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device's open-circuit voltage ( V OC ) that is much larger than the bandgap of OIHPs. The persistent V OC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable V OC without being limited by the materials' bandgap.
Anomalous photovoltaic effect in organic-inorganic hybrid perovskite solar cells
Yuan, Yongbo; Li, Tao; Wang, Qi; Xing, Jie; Gruverman, Alexei; Huang, Jinsong
2017-01-01
Organic-inorganic hybrid perovskites (OIHPs) have been demonstrated to be highly successful photovoltaic materials yielding very-high-efficiency solar cells. We report the room temperature observation of an anomalous photovoltaic (APV) effect in lateral structure OIHP devices manifested by the device’s open-circuit voltage (VOC) that is much larger than the bandgap of OIHPs. The persistent VOC is proportional to the electrode spacing, resembling that of ferroelectric photovoltaic devices. However, the APV effect in OIHP devices is not caused by ferroelectricity. The APV effect can be explained by the formation of tunneling junctions randomly dispersed in the polycrystalline films, which allows the accumulation of photovoltage at a macroscopic level. The formation of internal tunneling junctions as a result of ion migration is visualized with Kelvin probe force microscopy scanning. This observation points out a new avenue for the formation of large and continuously tunable VOC without being limited by the materials’ bandgap. PMID:28345043
Semiconductor junction formation by directed heat
Campbell, Robert B.
1988-03-24
The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.
1991-10-01
classical image potential in an ideal creasing gap separation, that is specific to the form of the metal- insulator -semiconductor (MIS) junction...with which one can precisely adjust s, and hence continuously vary the vacvuum barrier, is a potentially valuable tool for investigating this effect- By... insulator -semiconductor (MIS) junction similar to that shown in Fig. I diverge at the semiconductor-vacuum and vacuum-metal interfaces [7,81. These
Hertig, C M; Butz, S; Koch, S; Eppenberger-Eberhardt, M; Kemler, R; Eppenberger, H M
1996-01-01
The spatio-temporal appearance and distribution of proteins forming the intercalated disc were investigated in adult rat cardiomyocytes (ARC). The 'redifferentiation model' of ARC involves extensive remodelling of the plasma membrane and of the myofibrillar apparatus. It represents a valuable system to elucidate the formation of cell-cell contact between cardiomyocytes and to assess the mechanisms by which different proteins involved in the cell-cell adhesion process are sorted in a precise manner to the sites of function. Appearance of N-cadherin, the catenins and connexin43 within newly formed adherens and gap junctions was studied. Here first evidence is provided for a formation of two distinct and separable N-cadherin/catenin complexes in cardiomyocytes. Both complexes are composed of N-cadherin and alpha-catenin which bind to either beta-catenin or plakoglobin in a mutually exclusive manner. The two N-cadherin/catenin complexes are assumed to be functionally involved in the formation of cell-cell contacts in ARC; however, the differential appearance and localization of the two types of complexes may also point to a specific role during ARC differentiation. The newly synthesized beta-catenin containing complex is more abundant during the first stages in culture after ARC isolation, while the newly synthesized plakoglobin containing complex progressively accumulates during the morphological changes of ARC. ARC formed a tissue-like pattern in culture whereby the new cell-cell contacts could be dissolved through Ca2+ depletion. Presence of cAMP and replenishment of Ca2+ content in the culture medium not only allowed reformation of cell-cell contacts but also affected the relative protein ratio between the two N-cadherin/catenin complexes, increasing the relative amount of newly synthesized beta-catenin over plakoglobin at a particular stage of ARC differentiation. The clustered N-cadherin/catenin complexes at the plasma membrane appear to be a prerequisite for the following gap junction formation; a temporal sequence of the appearance of adherens junction proteins and of gap junctions forming connexin-43 is suggested.
Traction force dynamics predict gap formation in activated endothelium
DOE Office of Scientific and Technical Information (OSTI.GOV)
Valent, Erik T.; Nieuw Amerongen, Geerten P. van; Hinsbergh, Victor W.M. van
In many pathological conditions the endothelium becomes activated and dysfunctional, resulting in hyperpermeability and plasma leakage. No specific therapies are available yet to control endothelial barrier function, which is regulated by inter-endothelial junctions and the generation of acto-myosin-based contractile forces in the context of cell-cell and cell-matrix interactions. However, the spatiotemporal distribution and stimulus-induced reorganization of these integral forces remain largely unknown. Traction force microscopy of human endothelial monolayers was used to visualize contractile forces in resting cells and during thrombin-induced hyperpermeability. Simultaneously, information about endothelial monolayer integrity, adherens junctions and cytoskeletal proteins (F-actin) were captured. This revealed a heterogeneousmore » distribution of traction forces, with nuclear areas showing lower and cell-cell junctions higher traction forces than the whole-monolayer average. Moreover, junctional forces were asymmetrically distributed among neighboring cells. Force vector orientation analysis showed a good correlation with the alignment of F-actin and revealed contractile forces in newly formed filopodia and lamellipodia-like protrusions within the monolayer. Finally, unstable areas, showing high force fluctuations within the monolayer were prone to form inter-endothelial gaps upon stimulation with thrombin. To conclude, contractile traction forces are heterogeneously distributed within endothelial monolayers and force instability, rather than force magnitude, predicts the stimulus-induced formation of intercellular gaps. - Highlights: • Endothelial monolayers exert dynamic- and heterogeneous traction forces. • High traction forces correlate with junctional areas and the F-actin cytoskeleton. • Newly formed inter-endothelial gaps are characterized by opposing traction forces. • Force stability is a key feature controlling endothelial permeability.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.
Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less
NASA Technical Reports Server (NTRS)
Edmondson, Kenneth M.; Joslin, David E.; Fetzer, Chris M.; King, RIchard R.; Karam, Nasser H.; Mardesich, Nick; Stella, Paul M.; Rapp, Donald; Mueller, Robert
2007-01-01
The unparalleled success of the Mars Exploration Rovers (MER) powered by GaInP/GaAs/Ge triple-junction solar cells has demonstrated a lifetime for the rovers that exceeded the baseline mission duration by more than a factor of five. This provides confidence in future longer-term solar powered missions on the surface of Mars. However, the solar cells used on the rovers are not optimized for the Mars surface solar spectrum, which is attenuated at shorter wavelengths due to scattering by the dusty atmosphere. The difference between the Mars surface spectrum and the AM0 spectrum increases with solar zenith angle and optical depth. The recent results of a program between JPL and Spectrolab to optimize GaInP/GaAs/Ge solar cells for Mars are presented. Initial characterization focuses on the solar spectrum at 60-degrees zenith angle at an optical depth of 0.5. The 60-degree spectrum is reduced to 1/6 of the AM0 intensity and is further reduced in the blue portion of the spectrum. JPL has modeled the Mars surface solar spectra, modified an X-25 solar simulator, and completed testing of Mars-optimized solar cells previously developed by Spectrolab with the modified X-25 solar simulator. Spectrolab has focused on the optimization of the higher efficiency Ultra Triple-Junction (UTJ) solar cell for Mars. The attenuated blue portion of the spectrum requires the modification of the top sub-cell in the GaInP/GaAs/Ge solar cell for improved current balancing in the triple-junction cell. Initial characterization confirms the predicted increase in power and current matched operation for the Mars surface 60-degree zenith angle solar spectrum.
Hydrochemical facies and ground-water flow patterns in northern part of Atlantic Coastal Plain
Back, William
1966-01-01
Flow patterns of fresh ground water shown on maps and in cross sections have been deduced from available water-level data. These patterns are controlled by the distribution of the higher landmasses and by the depth to either bedrock or to the salt-water interface. The mapping of hydrochemical facies shows that at shallow depths within the Coastal Plain (less than about 200 ft) the calcium-magnesium cation facies generally predominates. The bicarbonate anion facies occurs within more of the shallow Coastal Plain sediments than does the sulfate or the chloride facies. In deeper formations, the sodium chloride character predominates. The lower dissolved-solids content of the ground water in New Jersey indicates less upward vertical leakage than in Maryland and Virginia, where the shallow formations contain solutions of higher concentration.
Bahloul, Amel; Simmler, Marie-Christine; Michel, Vincent; Leibovici, Michel; Perfettini, Isabelle; Roux, Isabelle; Weil, Dominique; Nouaille, Sylvie; Zuo, Jian; Zadro, Cristina; Licastro, Danilo; Gasparini, Paolo; Avan, Paul; Hardelin, Jean-Pierre; Petit, Christine
2009-01-01
Loud sound exposure is a significant cause of hearing loss worldwide. We asked whether a lack of vezatin, an ubiquitous adherens junction protein, could result in noise-induced hearing loss. Conditional mutant mice bearing non-functional vezatin alleles only in the sensory cells of the inner ear (hair cells) indeed exhibited irreversible hearing loss after only one minute exposure to a 105 dB broadband sound. In addition, mutant mice spontaneously underwent late onset progressive hearing loss and vestibular dysfunction related to substantial hair cell death. We establish that vezatin is an integral membrane protein with two adjacent transmembrane domains, and cytoplasmic N- and C-terminal regions. Late recruitment of vezatin at junctions between MDCKII cells indicates that the protein does not play a role in the formation of junctions, but rather participates in their stability. Moreover, we show that vezatin directly interacts with radixin in its actin-binding conformation. Accordingly, we provide evidence that vezatin associates with actin filaments at cell–cell junctions. Our results emphasize the overlooked role of the junctions between hair cells and their supporting cells in the auditory epithelium resilience to sound trauma. PMID:20049712
Rudine, S.F.; Wardlaw, B.R.; Rohr, D.M.; Grant, R.E.
2000-01-01
The Guadalupian rocks of the northern Del Norte Mountains were deposited in a foreland basin between land of the Marathon orogen and a carbonate shoal established on the geanticline separating the foreland basin from the Delaware basin. Deposition was alternately influenced by coarse clastic input from the orogen and carbonate shoal, which interrupted shallow basinal siltstone depletion. Relatively deeper-water deposition is characterized by carbonate input from the shoal, and relatively shallow-water deposition is characterized by sandstone input from the orogen. Deposition was in five general transgressive-regressive packages that include (1) the Road Canyon Formation and the first siltstone member and first sandstone member of the Word Formation, (2) the second siltstone member, Appel Ranch Member, and limy sandy siltstone member of the Word Formation, (3) the Vidrio Formation, (4) the lower and part of the middle members of the Altuda Formation, and (5) part of the middle and upper members of the Altuda Formation.
NASA Astrophysics Data System (ADS)
Chenarani, Atefeh; Hosseini, Seyedabolfazl; Vahidi Nia, Mohammad
2016-04-01
The Kopet Dagh sedimentary basin covers the northeastern part of Iran, most parts of Turkmenistan and north of Afghanistan which contains several giant gas fields. The extension of this basin in the Iranian part is around 55km2(Afshar Harb, 1994). The Kopet Dagh basin is marked by having very thick sedimentary rocks and lack of volcanic activity. During the Lower Cretaceous, the Tirgan Formation was deposited in a shallow platform setting and lithologically includes in thick-bedded orbitolinid limestones. This study focuses on the biostratigraphy and age determination of these shallow-water deposits using benthic foraminifera and calcareous green algae. In the studied outcrop, the Tirgan Formation has a thickness of 180 m and includes in limestone beds with some marly intervals. It is overlain by the Sarcheshmeh Formation and rests on the Shurijeh Formation. Both contacts are believed to be transitional and lack of discontinuity. A total of 56 thin-sections were used in this study. This study led to determine 28 genera and 14 species of benthic foraminifera along with 13 genera and 5 species of calcareous green algae. Based on the obtained biostratigraphy data, a late Barremian-early Aptian age is suggested for these deposits. We also defined the precise boundary between the Barremian and Aptian which is reported for the first time from this area. Keywords: Barremian-Aptian, Shallow platform, Kopet Dagh, Iran. Reference: Afshar Harb, A., 1994. Geology of Iran: Geology of the Kopet Dagh. Geological survey of Iran, Report No. 11, 275 pp.
Low frequency critical current noise and two level system defects in Josephson junctions
NASA Astrophysics Data System (ADS)
Nugroho, Christopher Daniel
The critical current in a Josephson junction is known to exhibit a 1/falpha low frequency noise. Implemented as a superconducting qubit, this low frequency noise can lead to decoherence. While the 1/f noise has been known to arise from an ensemble of two level systems connected to the tunnel barrier, the precise microscopic nature of these TLSs remain a mystery. In this thesis we will present measurements of the 1/f alpha low frequency noise in the critical current and tunneling resistance of Al-AlOx-Al Josephson junctions. Measurements in a wide range of resistively shunted and unshunted junctions confirm the equality of critical current and tunneling resistance noise. That is the critical current fluctuation corresponds to fluctuations of the tunneling resistance. In not too small Al-AlOx-Al junctions we have found that the fractional power spectral density scales linearly with temperature. We confirmed that the 1/falpha power spectrum is the result of a large number of two level systems modulating the tunneling resistance. At small junction areas and low temperatures, the number of thermally active TLSs is insufficient to integrate out a featureless 1/ f spectral shape. By analyzing the spectral variance in small junction areas, we have been able to deduce the TLS defect density, n ≈ 2.53 per micrometer squared per Kelvin spread in the TLS energy per factor e in the TLS lifetimes. This density is consistent with the density of tunneling TLSs found in glassy insulators, as well as the density deduced from coherent TLSs interacting at qubit frequencies. The deduced TLS density combined with the magnitude of the 1/f power spectral density in large area junctions, gives an average TLS effective area, A ˜ 0.3 nanometer squared. In ultra small tunnel junctions, we have studied the time-domain dynamics of isolated TLSs. We have found a TLS whose dynamics is described by the quantum tunneling between the two localized wells, and a one-phonon absorption/emission switching rate. From the quantum limiting rate and the WKB approximation, we estimated that the TLS has a mass and tunneling distance product consistent with an atomic mass tunneling through crystal lattice distances. At higher temperatures TLSs have been found that obey a simple thermal activation dynamics. By analyzing the TLS response to an external electric field, we have deduced that the TLS electric dipole is in the order of, P ˜ 1 electron-Angstrom, consistent with the TLS having the charge of one electron tunneling through a disorder potential of distances, d ˜ 1 Angstrom.
Low-high junction theory applied to solar cells
NASA Technical Reports Server (NTRS)
Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.
1974-01-01
Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.
Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt
NASA Astrophysics Data System (ADS)
Chen, Cong; Ning, Ting-Yin; Wang, Can; Zhou, Yue-Liang; Zhang, Dong-Xiang; Wang, Pei; Ming, Hai; Yang, Guo-Zhen
2011-08-01
CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow . A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.
NASA Astrophysics Data System (ADS)
Granato, Enzo
2018-05-01
We study the effects of disorder on the zero-temperature quantum phase transition of a honeycomb array of Josephson junctions in a magnetic field with an average of fo flux quantum per plaquette. Bond disorder due to spatial variations in the Josephson couplings and magnetic flux disorder due to variations in the plaquette areas are considered. The model can describe the superconductor-insulator transition in ultra-thin films with a triangular pattern of nanoholes. Path integral Monte Carlo simulations of the equivalent (2 + 1)-dimensional classical model are used to study the critical behavior and estimate the universal resistivity at the transition. The results show that bond disorder leads to a rounding of the first-order phase transition for fo = 1 / 3 to a continuous transition. For integer fo, the decrease of the critical coupling parameter with flux disorder is significantly different from that of the same model defined on a square lattice. The results are compared with recent experimental observations on nanohole thin films with geometrical disorder and external magnetic field.
Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hainey, Mel F.; Redwing, Joan M.
Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis onmore » methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.« less
MoS2 Heterojunctions by Thickness Modulation
Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; Ko, Changhyun; Seuk Kang, Jeong; Lien, Der-Hsien; Najmzadeh, Mohammad; Tongay, Sefaattin; Wu, Junqiao; Javey, Ali
2015-01-01
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices. PMID:26121940
MoS 2 Heterojunctions by Thickness Modulation
Tosun, Mahmut; Fu, Deyi; Desai, Sujay B.; ...
2015-06-30
In this work, we report lateral heterojunction formation in as-exfoliated MoS 2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignmentmore » and photoresponse of thickness modulated MoS 2 junctions with important implications for exploring novel optoelectronic devices.« less
Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.
Bellunato, Amedeo; Vrbica, Sasha D; Sabater, Carlos; de Vos, Erik W; Fermin, Remko; Kanneworff, Kirsten N; Galli, Federica; van Ruitenbeek, Jan M; Schneider, Grégory F
2018-04-11
The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene.
Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges
2018-01-01
The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene. PMID:29513997
NASA Technical Reports Server (NTRS)
Halloran, B. P.; Bikle, D. D.; Harris, J.; Tanner, S.; Curren, T.; Morey-Holton, E.
1997-01-01
To determine whether the acute inhibition of bone formation and deficit in bone mineral induced by skeletal unloading can be prevented, we studied the effects of intermittent parathyroid hormone (PTH) administration (8 micrograms/100 g/day) on growing rats submitted to 8 days of skeletal unloading. Loss of weight bearing decreased periosteal bone formation by 34 and 51% at the tibiofibular junction and tibial midshaft, respectively, and reduced the normal gain in tibial mass by 35%. Treatment with PTH of normally loaded and unloaded animals increased mRNA for osteocalcin (+58 and +148%, respectively), cancellous bone volume in the proximal tibia (+41 and +42%, respectively), and bone formation at the tibiofibular junction (+27 and +27%, respectively). Formation was also stimulated at the midshaft in unloaded (+47%, p < 0.05), but not loaded animals (-3%, NS). Although cancellous bone volume was preserved in PTH-treated, unloaded animals, PTH did not restore periosteal bone formation to normal nor prevent the deficit in overall tibial mass induced by unloading. We conclude that the effects of PTH on bone formation are region specific and load dependent. PTH can prevent the decrease in cancellous bone volume and reduce the decrement in cortical bone formation induced by loss of weight bearing.
NASA Astrophysics Data System (ADS)
Magoba, Moses; Opuwari, Mimonitu
2017-04-01
This paper embodies a study carried out to assess the Petrophysical evaluation of upper shallow marine sandstone reservoir of 10 selected wells in the Bredasdorp basin, offshore, South Africa. The studied wells were selected randomly across the upper shallow marine formation with the purpose of conducting a regional study to assess the difference in reservoir properties across the formation. The data sets used in this study were geophysical wireline logs, Conventional core analysis and geological well completion report. The physical rock properties, for example, lithology, fluid type, and hydrocarbon bearing zone were qualitatively characterized while different parameters such as volume of clay, porosity, permeability, water saturation ,hydrocarbon saturation, storage and flow capacity were quantitatively estimated. The quantitative results were calibrated with the core data. The upper shallow marine reservoirs were penetrated at different depth ranging from shallow depth of about 2442m to 3715m. The average volume of clay, average effective porosity, average water saturation, hydrocarbon saturation and permeability range from 8.6%- 43%, 9%- 16%, 12%- 68% , 32%- 87.8% and 0.093mD -151.8mD respectively. The estimated rock properties indicate a good reservoir quality. Storage and flow capacity results presented a fair to good distribution of hydrocarbon flow.
Realization of compact, passively-cooled, high-flux photovoltaic prototypes
NASA Astrophysics Data System (ADS)
Feuermann, Daniel; Gordon, Jeffrey M.; Horne, Steve; Conley, Gary; Winston, Roland
2005-08-01
The materialization of a recent conceptual advance in high-flux photovoltaic concentrators into first-generation prototypes is reported. Our design strategy includes a tailored imaging dual-mirror (aplanatic) system, with a tapered glass rod that enhances concentration and accommodates larger optical errors. Designs were severely constrained by the need for ultra-compact (minimal aspect ratio) modules, simple passive heat rejection, liberal optical tolerances, incorporating off-the-shelf commercial solar cells, and pragmatic considerations of affordable fabrication technologies. Each unit has a geometric concentration of 625 and irradiates a single square 100 mm2 triple-junction high-efficiency solar cell at a net flux concentration of 500.
Starich, Todd A; Hall, David H; Greenstein, David
2014-11-01
In all animals examined, somatic cells of the gonad control multiple biological processes essential for germline development. Gap junction channels, composed of connexins in vertebrates and innexins in invertebrates, permit direct intercellular communication between cells and frequently form between somatic gonadal cells and germ cells. Gap junctions comprise hexameric hemichannels in apposing cells that dock to form channels for the exchange of small molecules. Here we report essential roles for two classes of gap junction channels, composed of five innexin proteins, in supporting the proliferation of germline stem cells and gametogenesis in the nematode Caenorhabditis elegans. Transmission electron microscopy of freeze-fracture replicas and fluorescence microscopy show that gap junctions between somatic cells and germ cells are more extensive than previously appreciated and are found throughout the gonad. One class of gap junctions, composed of INX-8 and INX-9 in the soma and INX-14 and INX-21 in the germ line, is required for the proliferation and differentiation of germline stem cells. Genetic epistasis experiments establish a role for these gap junction channels in germline proliferation independent of the glp-1/Notch pathway. A second class of gap junctions, composed of somatic INX-8 and INX-9 and germline INX-14 and INX-22, is required for the negative regulation of oocyte meiotic maturation. Rescue of gap junction channel formation in the stem cell niche rescues germline proliferation and uncovers a later channel requirement for embryonic viability. This analysis reveals gap junctions as a central organizing feature of many soma-germline interactions in C. elegans. Copyright © 2014 by the Genetics Society of America.
Gil-Sanz, Cristina; Landeira, Bruna; Ramos, Cynthia; Costa, Marcos R; Müller, Ulrich
2014-08-06
Radial glial cells (RGCs) in the ventricular neuroepithelium of the dorsal telencephalon are the progenitor cells for neocortical projection neurons and astrocytes. Here we show that the adherens junction proteins afadin and CDH2 are critical for the control of cell proliferation in the dorsal telencephalon and for the formation of its normal laminar structure. Inactivation of afadin or CDH2 in the dorsal telencephalon leads to a phenotype resembling subcortical band heterotopia, also known as "double cortex," a brain malformation in which heterotopic gray matter is interposed between zones of white matter. Adherens junctions between RGCs are disrupted in the mutants, progenitor cells are widely dispersed throughout the developing neocortex, and their proliferation is dramatically increased. Major subtypes of neocortical projection neurons are generated, but their integration into cell layers is disrupted. Our findings suggest that defects in adherens junctions components in mice massively affects progenitor cell proliferation and leads to a double cortex-like phenotype. Copyright © 2014 the authors 0270-6474/14/3410475-13$15.00/0.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wu, Ting; Mukherjee, Rupam; Ovchinnikova, Olga S.
Hybrid perovskites, as emerging multifunctional semiconductors, have demonstrated dual electronic/ionic conduction properties. Here, we report a metal/ion interaction induced p-i-n junction across slightly n-type doped MAPbI 3 single crystals with Au/MAPbI 3/Ag configuration based on interface dependent Seebeck effect, Hall effect and time-of-flight secondary ion mass spectrometry analysis. The organic cations (MA +) interact with Au atoms, forming positively charged coordination complexes at Au/MAPbI 3 interface, whereas iodine anions (I –) can react with Ag contacts, leading to interfacial ionic polarization. Such metal/ion interactions establish a p-doped region near the Au/MAPbI 3 interface due to the formation of MA +more » vacancies, and an n-doped region near the Ag/MAPbI 3 interface due to formation of I – vacancies, consequently forming a p-i-n junction across the crystal in Au/MAPbI 3/Ag configuration. Therefore, the metal/ion interaction plays a role in determining the surface electronic structure and semiconducting properties of hybrid perovskites.« less
Wu, Ting; Mukherjee, Rupam; Ovchinnikova, Olga S.; ...
2017-11-17
Hybrid perovskites, as emerging multifunctional semiconductors, have demonstrated dual electronic/ionic conduction properties. Here, we report a metal/ion interaction induced p-i-n junction across slightly n-type doped MAPbI 3 single crystals with Au/MAPbI 3/Ag configuration based on interface dependent Seebeck effect, Hall effect and time-of-flight secondary ion mass spectrometry analysis. The organic cations (MA +) interact with Au atoms, forming positively charged coordination complexes at Au/MAPbI 3 interface, whereas iodine anions (I –) can react with Ag contacts, leading to interfacial ionic polarization. Such metal/ion interactions establish a p-doped region near the Au/MAPbI 3 interface due to the formation of MA +more » vacancies, and an n-doped region near the Ag/MAPbI 3 interface due to formation of I – vacancies, consequently forming a p-i-n junction across the crystal in Au/MAPbI 3/Ag configuration. Therefore, the metal/ion interaction plays a role in determining the surface electronic structure and semiconducting properties of hybrid perovskites.« less
Fullerene Derived Molecular Electronic Devices
NASA Technical Reports Server (NTRS)
Menon, Madhu; Srivastava, Deepak; Saini, Subbash
1998-01-01
The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale electronic devices. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal grapheme sheet, more complex joints require other mechanisms. In this work we explore structural and electronic properties of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme.
A systematic search for dwarf counterparts to ultra compact high velocity clouds
NASA Astrophysics Data System (ADS)
Bennet, Paul; Sand, David J.; Crnojevic, Denija; Strader, Jay
2015-01-01
Observations of the Universe on scales smaller than typical, massive galaxies challenge the standard Lambda Cold Dark Matter paradigm for structure formation. It is thus imperative to discover and characterize the faintest dwarf galaxy systems, not just within the Local Group, but in relatively isolated environments as well in order to properly connect them with models of structure formation. Here we report on a systematic search of public ultraviolet and optical archives for dwarf galaxy counterparts to so-called Ultra Compact High Velocity Clouds (UCHVCs), which are compact, isolated HI sources recently found in the Galactic Arecibo L-band Feed Array-HI (GALFA-HI) and Arecibo Legacy Fast ALFA (ALFALFA-HI) surveys. Our search has uncovered at least three strong dwarf galaxy candidates, and we present their inferred star formation rate and structural properties here.
Convective radiation fluid-dynamics: formation and early evolution of ultra low-mass objects
NASA Astrophysics Data System (ADS)
Wuchterl, G.
2005-12-01
The formation process of ultra low-mass objects is some kind of extension of the star formation process. The physical changes towards lower mass are discussed by investigating the collapse of cloud cores that are modelled as Bonnor-Ebert spheres. Their collapse is followed by solving the equations of fluid dynamics with radiation and a model of time-dependent convection that has been calibrated to the Sun. For a sequence of cloud-cores with 1 to 0.01 solar masses, evolutionary tracks and isochrones are shown in the mass-radius diagram, the Hertzsprung-Russel diagram and the effective temperature-surface gravity or Kiel diagram. The collapse and the early hydrostatic evolution to ages of few Ma are briefly discussed and compared to observations of objects in Upper Scorpius and the low-mass components of GG Tau.
Coalbed methane accumulation and dissipation patterns: A Case study of the Junggar Basin, NW China
NASA Astrophysics Data System (ADS)
Li, Xin; Fu, Xuehai; Yang, Xuesong; Ge, Yanyan; Quan, Fangkai
2018-07-01
The Junggar Basin is a potential replacement area of coalbed methane (CBM) development in China. To improve the efficiency of CBM exploration, we investigated CBM accumulation and dissipation patterns of coal profiles located in the northwestern, southern, eastern, and central Junggar Basin based on the following criteria: burial depth, hydrogeological zone, CBM origin, CBM phase, and CBM migration type. We identified four types of CBM accumulation patterns: (1) a self-sourcing CBM pattern containing adsorbed gas of biogenic origin from shallow-depth coal within a weak runoff zone; (2) an endogenic migration pattern containing adsorbed gas of thermogenic origin from the medium and deep coals within a stagnant zone; (3) an exogenic migration pattern containing adsorbed gas of thermogenic origin from deep coal within a stagnant zone; and (4) an exogenic migration pattern containing adsorbed and free gas of thermogenic origin from ultra-deep coal within a stagnant zone. We also identified two types of CBM dissipation patterns: (1) shallow-depth coal within a runoff zone with mixed origin CBM; and (2) shallow and medium-deep coal seams with mixed origin CBM. CBM migration in low-rank coals was more substantial than that adsorbed in high-rank coal. CBM in shallow coal could easily escape, in the absence of closed structures or hydrogeological seals. CBM reservoirs occurred in deep coal where oversaturated gas may accumulate. Future exploration should focus on gas-water sealing structures in shallow coalbeds. CBM that occurred in adsorbed and free phases and other unconventional natural gas dominated by free gas in the coal stratum should be co-explored and co-developed.
Atomistic simulations of highly conductive molecular transport junctions under realistic conditions
NASA Astrophysics Data System (ADS)
French, William R.; Iacovella, Christopher R.; Rungger, Ivan; Souza, Amaury Melo; Sanvito, Stefano; Cummings, Peter T.
2013-04-01
We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate (BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nat. Nanotechnol., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices.We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate (BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nat. Nanotechnol., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr00459g
NASA Astrophysics Data System (ADS)
Ogurtani, Tarik Omer; Celik, Aytac; Oren, Ersin Emre
2010-09-01
A systematic study based on the self-consistent dynamical simulations is presented for the spontaneous evolution of an isolated thin solid droplet (bump) on a rigid substrate, which is driven by the surface drift diffusion induced by the capillary and mismatch stresses. In this study, we mainly focused on the development kinetics of the "Stranski-Krastanow" island type morphology, initiated by the nucleation route rather than the surface roughening scheme. The physicomathematical model, which bases on the irreversible thermodynamics treatment of surfaces and interfaces with singularities [T. O. Ogurtani, J. Chem. Phys. 124, 144706 (2006)], furnishes us to have autocontrol on the otherwise free-motion of the triple junction contour line between the substrate and the droplet without presuming any equilibrium dihedral contract (wetting) angles at the edges. During the development of the bell-shaped Stranski-Krastanow island through the mass accumulation at the central region of the droplet via surface drift diffusion with and/or without growth, the formation of an extremely thin wetting layer is observed. This wetting layer has a thickness of a fraction of a nanometer and covers not only the initial computation domain but also its further extension beyond the original boundaries. We also observed the formation of the multiple islands separated by shallow wetting layers above a certain threshold level of the mismatch strain and/or the size (i.e., volume) of the droplets. This threshold level depends on the initial physicochemical data and the aspect ratio (i.e., shape) of the original droplets. During the course of the simulations, we continuously tracked both the morphology (i.e., the peak height, the extension of the wetting layer beyond the domain boundaries, and the triple junction contact angle) and energetic (the global Helmholtz free energy changes associated with the total strain and surface energy variations) in the system. We observed that the morphology related quantities are reaching certain saturation limits or plateaus, when the growth mode is turned-off. On the other hand, the global Helmholtz free energy showed a steady decrease in time even though the total surface free energy of the droplet reaches a stationary value as expected a priori. Based on these observations and according to the accepted irreversible thermodynamic terminology as coined by celebrated Prigogine, we state that the Stranski-Krastanow type island morphologies are genuine stationary nonequilibrium states.
Ultra-high-mass mass spectrometry with charge discrimination using cryogenic detectors
Frank, Matthias; Mears, Carl A.; Labov, Simon E.; Benner, W. Henry
1999-01-01
An ultra-high-mass time-of-flight mass spectrometer using a cryogenic particle detector as an ion detector with charge discriminating capabilities. Cryogenic detectors have the potential for significantly improving the performance and sensitivity of time-of-flight mass spectrometers, and compared to ion multipliers they exhibit superior sensitivity for high-mass, slow-moving macromolecular ions and can be used as "stop" detectors in time-of-flight applications. In addition, their energy resolving capability can be used to measure the charge state of the ions. Charge discrimination is very valuable in all time-of-flight mass spectrometers. Using a cryogenically-cooled Nb-Al.sub.2 O.sub.3 -Nb superconductor-insulator-superconductor (SIS) tunnel junction (STJ) detector operating at 1.3 K as an ion detector in a time-of-flight mass spectrometer for large biomolecules it was found that the STJ detector has charge discrimination capabilities. Since the cryogenic STJ detector responds to ion energy and does not rely on secondary electron production, as in the conventionally used microchannel plate (MCP) detectors, the cryogenic detector therefore detects large molecular ions with a velocity-independent efficiency approaching 100%.
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
NASA Astrophysics Data System (ADS)
Ma, Jun; Matioli, Elison
2018-01-01
This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.
Ultra-strong coupling in a transmon circuit architecture
NASA Astrophysics Data System (ADS)
Bosman, Sal; Gely, Mario; Singh, Vibhor; Bruno, Alessandro; Steele, Gary
New unexplored phenomena are predicted in cQED for the ultra-strong coupling (USC) regime and beyond. Here, we explore two strategies to increase the coupling between a transmon qubit and a microwave resonator. In the first approach, we increase the impedance of the resonator, enhancing it's voltage zero-point fluctuations, and measure a vacuum Rabi splitting of 916 MHz. In a second approach, we create a transmon qubit by making a superconducting island suspended above the center conductor of the resonator and which is shorted to ground by two Josephson junctions. Doing so, we maximize the dipole moment of the qubit and observe a vacuum Rabi splitting of 1.2 GHz with a qubit linewidth of 1 MHz. This first transmon qubit in the USC regime improves the coherence time by a factor of 100 compared to other systems in the USC limit. Finally we predict that by combining both approaches, a coupling of ~ 3 . 6 GHz is possible, reaching close to the deep strong coupling limit. The work was supported by the Dutch science foundation NWO/FOM.
Chemical Abundance Measurements of Ultra-Faint Dwarf Galaxies Discovered by the Dark Energy Survey
NASA Astrophysics Data System (ADS)
Nagasawa, Daniel; Marshall, Jennifer L.; Simon, Joshua D.; Hansen, Terese; Li, Ting; Bernstein, Rebecca; Balbinot, Eduardo; Drlica-Wagner, Alex; Pace, Andrew; Strigari, Louis; Pellegrino, Craig; DePoy, Darren L.; Suntzeff, Nicholas; Bechtol, Keith; Dark Energy Suvey
2018-01-01
We present chemical abundance analysis results derived from high-resolution spectroscopy of ultra-faint dwarfs discovered by the Dark Energy Survey. Ultra-faint dwarf galaxies preserve a fossil record of the chemical abundance patterns imprinted by the first stars in the Universe. High-resolution spectroscopic observations of member stars in several recently discovered Milky Way satellites reveal a range of abundance patterns among ultra-faint dwarfs suggesting that star formation processes in the early Universe were quite diverse. The chemical content provides a glimpse not only of the varied nucleosynthetic processes and chemical history of the dwarfs themselves, but also the environment in which they were formed. We present the chemical abundance analysis of these objects and discuss possible explanations for the observed abundance patterns.
ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes
DOE Office of Scientific and Technical Information (OSTI.GOV)
David P. Norton; Stephen Pearton; Fan Ren
2007-09-30
By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg formore » higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.« less
Carnes, Stephanie; O'Brien, Stacey; Szewczak, Angelica; Tremeau-Cayel, Lauriane; Rowe, Walter F; McCord, Bruce; Lurie, Ira S
2017-09-01
A comparison of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography for the separation of synthetic cathinones has been conducted. Nine different mixtures of bath salts were analyzed in this study. The three different chromatographic techniques were examined using a general set of controlled synthetic cathinones as well as a variety of other synthetic cathinones that exist as positional isomers. Overall 35 different synthetic cathinones were analyzed. A variety of column types and chromatographic modes were examined for developing each separation. For the ultra high performance supercritical fluid chromatography separations, analyses were performed using a series of Torus and Trefoil columns with either ammonium formate or ammonium hydroxide as additives, and methanol, ethanol or isopropanol organic solvents as modifiers. Ultra high performance liquid chromatographic separations were performed in both reversed phase and hydrophilic interaction chromatographic modes using SPP C18 and SPP HILIC columns. Gas chromatography separations were performed using an Elite-5MS capillary column. The orthogonality of ultra high performance supercritical fluid chromatography, ultra high performance liquid chromatography, and gas chromatography was examined using principal component analysis. For the best overall separation of synthetic cathinones, the use of ultra high performance supercritical fluid chromatography in combination with gas chromatography is recommended. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Rymer, Michael J.; Roth, Barry; Bradbury, J. Platt; Forester, Richard M.
1988-01-01
We describe the depositional environments of the Cache, Lower Lake, and Kelseyville Formations in light of habitat preferences of recovered mollusks, ostracodes, and diatoms. Our reconstruction of paleoenvironments for these late Cenozoic deposits provides a framework for an understanding of basin evolution and deposition in the Clear Lake region. The Pliocene and Pleistocene Cache Formation was deposited primarily in stream and debris flow environments; fossils from fine-grained deposits indicate shallow, fresh-water environments with locally abundant aquatic vegetation. The fine-grained sediments (mudstone and siltstone) were probably deposited in ponds in abandoned channels or shallow basins behind natural levees. The abandoned channels and shallow basins were associated with the fluvial systems responsible for deposition of the bulk of the technically controlled Cache Formation. The Pleistocene Lower Lake Formation was deposited in a water mass large enough to contain a variety of local environments and current regimes. The recovered fossils imply a lake with water depths of 1 to 5 m. However, there is strong support from habitat preferences of the recovered fossils for inferring a wide range of water depths during deposition of the Lower Lake Formation; they indicate a progressively shallowing system and the culmination of a desiccating lacustrine system. The Pleistocene Kelseyville Formation represents primarily lacustrine deposition with only minor fluvial deposits around the margins of the basin. Local conglomerate beds and fossil tree stumps in growth position within the basin indicate occasional widespread fluvial incursions and depositional hiatuses. The Kelseyville strata represent a large water mass with a muddy and especially fluid substrate having permanent or sporadic periods of anoxia. Central-lake anoxia, whether permanent or at irregular intervals, is the simplest way to account for the low numbers of benthic organisms recovered from the Kelseyville Formation. Similar low-oxygen conditions for benthic life are represented throughout the sedimentary history of Clear Lake. Water depths for the Kelseyville Formation of 10 to 30 m and 12 m near the margins of the basin are inferred both before and after fluvial incursions. These water-depth fluctuations cannot be correlated with major climatic changes as indicated by pollen and fossil leaves and cones; they may be due to faulting in this technically active region.
Evolution of the northern Main Ethiopian rift: birth of a triple junction
NASA Astrophysics Data System (ADS)
Wolfenden, Ellen; Ebinger, Cynthia; Yirgu, Gezahegn; Deino, Alan; Ayalew, Dereje
2004-07-01
Models for the formation of the archetypal rift-rift-rift triple junction in the Afar depression have assumed the synchronous development of the Red Sea-Aden-East African rift systems soon after flood basaltic magmatism at 31 Ma, but the timing of intial rifting in the northern sector of the East African rift system had been poorly constrained. The aims of our field, geochronology, and remote sensing studies were to determine the timing and kinematics of rifting in the 3rd arm, the Main Ethiopian rift (MER), near its intersection with the southern Red Sea rift. New structural data and 10 new SCLF 40Ar/39Ar dates show that extension in the northern Main Ethiopian rift commenced after 11 Ma, more than 17 My after initial rifting in the southern Red Sea and Gulf of Aden. The triple junction, therefore, could have developed only during the past 11 My, or 20 My after the flood basaltic magmatism. Thus, the flood basaltic magmatism and separation of Arabia from Africa are widely separated in time from the opening of the Main Ethiopian rift, which marks the incipient Nubia-Somalia plate boundary; triple junction formation is not a primary feature of breakup above the Afar mantle plume. The East African rift system appears to have propagated northward from the Mesozoic Anza rift system into the Afar depression to cut across Oligo-Miocene rift structures of the Red Sea and Gulf of Aden, in response to global plate reorganisations. Structural patterns reveal a change from 130°E-directed extension to 105°E-directed extension sometime in the interval 6.6 to 3 Ma, consistent with predictions from global plate kinematic studies. The along-axis propagation of rifting in each of the three arms of the triple junction has led to a NE-migration of the triple junction since 11 Ma.
Higgins, Adam Z.; Karlsson, Jens O.M.
2013-01-01
The development of cryopreservation procedures for tissues has proven to be difficult in part because cells within tissue are more susceptible to intracellular ice formation (IIF) than are isolated cells. In particular, previous studies suggest that cell-cell interactions increase the likelihood of IIF by enabling propagation of ice between neighboring cells, a process thought to be mediated by gap junction channels. In this study, we investigated the effects of cell-cell interactions on IIF using three genetically modified strains of the mouse insulinoma cell line MIN6, each of which expressed key intercellular junction proteins (connexin-36, E-cadherin, and occludin) at different levels. High-speed video cryomicroscopy was used to visualize the freezing process in pairs of adherent cells, revealing that the initial IIF event in a given cell pair was correlated with a hitherto unrecognized precursor phenomenon: penetration of extracellular ice into paracellular spaces at the cell-cell interface. Such paracellular ice penetration occurred in the majority of cell pairs observed, and typically preceded and colocalized with the IIF initiation events. Paracellular ice penetration was generally not observed at temperatures >−5.65°C, which is consistent with a penetration mechanism via defects in tight-junction barriers at the cell-cell interface. Although the maximum temperature of paracellular penetration was similar for all four cell strains, genetically modified cells exhibited a significantly higher frequency of ice penetration and a higher mean IIF temperature than did wild-type cells. A four-state Markov chain model was used to quantify the rate constants of the paracellular ice penetration process, the penetration-associated IIF initiation process, and the intercellular ice propagation process. In the initial stages of freezing (>−15°C), junction protein expression appeared to only have a modest effect on the kinetics of propagative IIF, and even cell strains lacking the gap junction protein connexin-36 exhibited nonnegligible ice propagation rates. PMID:24209845
NASA Astrophysics Data System (ADS)
Cheng, Qiang; Zhang, Kunhua; Ma, Hongyang
2018-03-01
We propose a new type of Josephson junction consisting of topologically nontrivial superconductors with inherent orthogonality and a ferromagnetic interface. It is found this type of junction can host rich ground states: 0 phase, π phase, 0 + π phase, φ0 phase and φ0 ± φ phase. Phase transitions can be controlled by changing the direction of the interfacial magnetization. Phase diagrams are presented in the orientation space. Novel selection rules for the lowest order current, sin ϕ or cos ϕ, of this kind of junction are derived. General conditions for the formation of various ground states are established, which possess guiding significance to the experimental design of required ground states for practical applications. We construct the succinct form of a Ginzburg-Landau type of free energy from the viewpoint of the interplay between topological superconductivity and ferromagnetism, which can immediately lead to the selection rules. The constructed terms are universally available to the topological Josephson junctions with or without inherent orthogonality reported recently. The spin supercurrent, its selection rules and their relations to the constructed energy are also investigated.
Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.
Choi, Min Sup; Qu, Deshun; Lee, Daeyeong; Liu, Xiaochi; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Won Jong
2014-09-23
This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10(10) Jones, and light switching ratio of ∼10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC) and short-circuit current (ISC) were understood to originate from the formation of a p-n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p-n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.
Denny, Mark; Dorgan, Kelly M; Evangelista, Dennis; Hettinger, Annaliese; Leichter, James; Ruder, Warren C; Tuval, Idan
2011-10-01
Sea ice typically forms at the ocean's surface, but given a source of supercooled water, an unusual form of ice--anchor ice--can grow on objects in the water column or at the seafloor. For several decades, ecologists have considered anchor ice to be an important agent of disturbance in the shallow-water benthic communities of McMurdo Sound, Antarctica, and potentially elsewhere in polar seas. Divers have documented anchor ice in the McMurdo communities, and its presence coincides with reduced abundance of the sponge Homaxinella balfourensis, which provides habitat for a diverse assemblage of benthic organisms. However, the mechanism of this disturbance has not been explored. Here we show interspecific differences in anchor-ice formation and propagation characteristics for Antarctic benthic organisms. The sponges H. balfourensis and Suberites caminatus show increased incidence of formation and accelerated spread of ice crystals compared to urchins and sea stars. Anchor ice also forms readily on sediments, from which it can grow and adhere to organisms. Our results are consistent with, and provide a potential first step toward, an explanation for disturbance patterns observed in shallow polar benthic communities. Interspecific differences in ice formation raise questions about how surface tissue characteristics such as surface area, rugosity, and mucus coating affect ice formation on invertebrates.
Mapping the Transmission Functions of Single-Molecule Junctions
Capozzi, Brian; Low, Jonathan Z.; Xia, Jianlong; ...
2016-06-08
Charge transport characteristics of single-molecule junctions are often governed by a transmission function that dictates the probability of electrons or holes tunneling across the junction. Here, we present a new and simple technique for measuring the transmission function of molecular junctions in the coherent tunneling limit, over an energy range of 2 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different areas exposed, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junctionmore » Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction’s transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed ab initio. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.« less
Mapping the Transmission Functions of Single-Molecule Junctions
DOE Office of Scientific and Technical Information (OSTI.GOV)
Capozzi, Brian; Low, Jonathan Z.; Xia, Jianlong
Charge transport characteristics of single-molecule junctions are often governed by a transmission function that dictates the probability of electrons or holes tunneling across the junction. Here, we present a new and simple technique for measuring the transmission function of molecular junctions in the coherent tunneling limit, over an energy range of 2 eV around the Fermi energy. We create molecular junctions in an ionic environment with electrodes having different areas exposed, which results in the formation of electric double layers of dissimilar density on the two electrodes. This allows us to electrostatically shift the molecular resonance relative to the junctionmore » Fermi levels in a manner that depends on the sign of the applied bias, enabling us to map out the junction’s transmission function and determine the dominant orbital for charge transport in the molecular junction. We demonstrate this technique using two groups of molecules: one group having molecular resonance energies relatively far from EF and one group having molecular resonance energies within the accessible bias window. Our results compare well with previous electrochemical gating data and with transmission functions computed ab initio. Furthermore, with the second group of molecules, we are able to examine the behavior of a molecular junction as a resonance shifts into the bias window. This work provides a new, experimentally simple route for exploring the fundamentals of charge transport at the nanoscale.« less
First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions
NASA Astrophysics Data System (ADS)
Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang
2018-06-01
Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.
Vliagoftis, Harissios; Ebeling, Cory; Ilarraza, Ramses; Mahmudi-Azer, Salahaddin; Abel, Melanie; Adamko, Darryl; Befus, A Dean; Moqbel, Redwan
2014-01-01
Eosinophils circulate in the blood and are recruited in tissues during allergic inflammation. Gap junctions mediate direct communication between adjacent cells and may represent a new way of communication between immune cells distinct from communication through cytokines and chemokines. We characterized the expression of connexin (Cx)43 by eosinophils isolated from atopic individuals using RT-PCR, Western blotting, and confocal microscopy and studied the biological functions of gap junctions on eosinophils. The formation of functional gap junctions was evaluated measuring dye transfer using flow cytometry. The role of gap junctions on eosinophil transendothelial migration was studied using the inhibitor 18-a-glycyrrhetinic acid. Peripheral blood eosinophils express Cx43 mRNA and protein. Cx43 is localized not only in the cytoplasm but also on the plasma membrane. The membrane impermeable dye BCECF transferred from eosinophils to epithelial or endothelial cells following coculture in a dose and time dependent fashion. The gap junction inhibitors 18-a-glycyrrhetinic acid and octanol did not have a significant effect on dye transfer but reduced dye exit from eosinophils. The gap junction inhibitor 18-a-glycyrrhetinic acid inhibited eosinophil transendothelial migration in a dose dependent manner. Thus, eosinophils from atopic individuals express Cx43 constitutively and Cx43 may play an important role in eosinophil transendothelial migration and function in sites of inflammation.
This presentation by J.McIntosh, M.Schlegal, and B.Bates from the University of Arizona compares the chemical and isotope formation in fractured shales with shallow drift aquifers, coalbeds and other deep geologic formations, based on the Illinois basin.
NASA Astrophysics Data System (ADS)
Leberl, F.; Gruber, M.; Ponticelli, M.; Wiechert, A.
2012-07-01
The UltraCam-project created a novel Large Format Digital Aerial Camera. It was inspired by the ISPRS Congress 2000 in Amsterdam. The search for a promising imaging idea succeeded in May 2001, defining a tiling approach with multiple lenses and multiple area CCD arrays to assemble a seamless and geometrically stable monolithic photogrammetric aerial large format image. First resources were spent on the project in September 2011. The initial UltraCam-D was announced and demonstrated in May 2003. By now the imaging principle has resulted in a 4th generation UltraCam Eagle, increasing the original swath width from 11,500 pixels to beyond 20,000. Inspired by the original imaging principle, alternatives have been investigated, and the UltraCam-G carries the swath width even further, namely to a frame image with nearly 30,000 pixels, however, with a modified tiling concept and optimized for orthophoto production. We explain the advent of digital aerial large format imaging and how it benefits from improvements in computing technology to cope with data flows at a rate of 3 Gigabits per second and a need to deal with Terabytes of imagery within a single aerial sortie. We also address the many benefits of a transition to a fully digital workflow with a paradigm shift away from minimizing a project's number of aerial photographs and towards maximizing the automation of photogrammetric workflows by means of high redundancy imaging strategies. The instant gratification from near-real-time aerial triangulations and dense image matching has led to a reassessment of the value of photogrammetric point clouds to successfully compete with direct point cloud measurements by LiDAR.
Toward an understanding of disequilibrium dihedral angles in mafic rocks
Holness, Marian B.; Humphreys, Madeleine C.S.; Sides, Rachel; Helz, Rosalind T.; Tegner, Christian
2012-01-01
The median dihedral angle at clinopyroxene-plagioclase-plagioclase junctions in mafic rocks, Θcpp, is generally lower than equilibrium (109˚ {plus minus} 2˚). Observation of a wide range of mafic bodies demonstrates that previous work on systematic variations of Θcpp is incorrect in several important respects. Firstly, the spatial distribution of plagioclase compositional zoning demonstrates that the final geometry of three-grain junctions, and hence Θcpp, is formed during solidification (the igneous process): sub-solidus textural modification in most dolerites and gabbros, previously thought to be the dominant control on Θcpp, is insignificant. Θcpp is governed by mass transport constraints, the inhibiting effects of small pore size on crystallization, and variation in relative growth rates of pyroxene and plagioclase. During rapid cooling, pyroxene preferentially fills wider pores while the narrower pores remain melt-filled, resulting in an initial value of Θcpp of 78˚, rather than 60˚ which would be expected if all melt-filled pores were filled with pyroxene. Lower cooling rates create a higher initial Θcpp due to changes in relative growth rates of the two minerals at the nascent three-grain junction. Low Θcpp (associated with cuspate clinopyroxene grains at triple junctions) can also be diagnostic of infiltration of previously melt-free rocks by late-stage evolved liquids (the metasomatic process). Modification of Θcpp by sub-solidus textural equilibration (the metamorphic process) is only important for fine-grained mafic rocks such as chilled margins and intra-plutonic chill zones. In coarse-grained gabbros from shallow crustal intrusions the metamorphic process occurs only in the centres of oikocrysts, associated with rounding of chadacrysts.
Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C
2012-01-01
Summary Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased. PMID:22497001
Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C; Sadewasser, Sascha
2012-01-01
Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu(3)BiS(3) absorber layer and the junction formation with CdS, ZnS and In(2)S(3) buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20-100 nm, and a considerably smaller work-function distribution for In(2)S(3) compared to that of CdS and ZnS. For In(2)S(3) and CdS buffer layers the KPFM experiments indicate negatively charged Cu(3)BiS(3) grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In(2)S(3) buffer layer. Our findings indicate that Cu(3)BiS(3) may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.
Egawa, M; Kamata, H; Kushiyama, A; Sakoda, H; Fujishiro, M; Horike, N; Yoneda, M; Nakatsu, Y; Ying, Guo; Jun, Zhang; Tsuchiya, Y; Takata, K; Kurihara, H; Asano, T
2008-12-01
BeWo cells, derived from human choriocarcinoma, have been known to respond to forskolin or cAMP analogues by differentiating into multinucleated cells- like syncytiotrophoblasts on the surfaces of chorionic villi of the human placenta. In this study, we demonstrated that long-term treatment with forskolin enhances the tight junction (TJ) formation in human placental BeWo cells. Interestingly, AMPK activation and phosphorylation of acetyl-CoA carboxylase (ACC), a molecule downstream from AMPK, were induced by long-term incubation (>12h) with forskolin, despite not being induced by acute stimulation with forskolin. In addition, co-incubation with an AMPK inhibitor, compound C, as well as overexpression of an AMPK dominant negative mutant inhibited forskolin-induced TJ formation. Thus, although the molecular mechanism underlying AMPK activation via the forskolin stimulation is unclear, the TJ formation induced by forskolin is likely to be mediated by the AMPK pathway. Taking into consideration that TJs are present in the normal human placenta, this mechanism may be important for forming the placental barrier system between the fetal and maternal circulations.
A Novel Approach to Photonic Generation and Modulation of Ultra-Wideband Pulses
NASA Astrophysics Data System (ADS)
Xiang, Peng; Guo, Hao; Chen, Dalei; Zhu, Huatao
2016-01-01
A novel approach to photonic generation of ultra-wideband (UWB) signals is proposed in this paper. The proposed signal generator is capable of generating UWB doublet pulses with flexible reconfigurability, and many different pulse modulation formats, including the commonly used pulse-position modulation (PPM) and bi-phase modulation (BPM) can be realized. Moreover, the photonic UWB pulse generator is capable of generating UWB signals with a tunable spectral notch-band, which is desirable to realize the interference avoidance between UWB and other narrow band systems, such as Wi-Fi. A mathematical model describing the proposed system is developed and the generation of UWB signals with different modulation formats is demonstrated via computer simulations.
Revealing the Formation Mechanism of Ultra-Diffuse Galaxies
NASA Astrophysics Data System (ADS)
Garmire, Gordon
2017-09-01
Recently a population of large, very low optical surface brightness galaxies, so called ultra-diffuse galaxies (UDGs), were discovered in the outskirts of Coma clusters. Stellar line-of-sight velocity dispersions suggest large dark matter halo masses of 10^12 M_sun with very low baryon fractions ( 1%). The outstanding question waiting to be answered is: How do UDGs form and evolve? One theory is that UDGs are related to bright galaxies, however they are prevented from building a normal stellar population through various violent processes, such as gas stripping. We propose to observe Dragonfly 44, the most massive UDG known, for 100 ks with ACIS-I to test some of the formation theories.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Goering, J.; Burghaus, Uwe; Arey, Bruce W.
The adsorption kinetics of thiophene on WS2 nanoparticles with fullerene-like (onion-like) structure has been studied at ultra-high vacuum conditions by sample temperature ramping techniques. At low temperatures, thiophene adsorbs molecularly. The formation of H2S and alkanes is evident at greater temperatures on fully sulfided as well as reduced and oxidized WS2 nanoparticles.
(Almost) Dark Galaxies in the ALFALFA Survey: Isolated H I-bearing Ultra-diffuse Galaxies
NASA Astrophysics Data System (ADS)
Leisman, Lukas; Haynes, Martha P.; Janowiecki, Steven; Hallenbeck, Gregory; Józsa, Gyula; Giovanelli, Riccardo; Adams, Elizabeth A. K.; Bernal Neira, David; Cannon, John M.; Janesh, William F.; Rhode, Katherine L.; Salzer, John J.
2017-06-01
We present a sample of 115 very low optical surface brightness, highly extended, H I-rich galaxies carefully selected from the ALFALFA survey that have similar optical absolute magnitudes, surface brightnesses, and radii to recently discovered “ultra-diffuse” galaxies (UDGs). However, these systems are bluer and have more irregular morphologies than other UDGs, are isolated, and contain significant reservoirs of H I. We find that while these sources have normal star formation rates for H I-selected galaxies of similar stellar mass, they have very low star formation efficiencies. We further present deep optical and H I-synthesis follow-up imaging of three of these H I-bearing ultra-diffuse sources. We measure H I diameters extending to ˜40 kpc, but note that while all three sources have large H I diameters for their stellar mass, they are consistent with the H I mass-H I radius relation. We further analyze the H I velocity widths and rotation velocities for the unresolved and resolved sources, respectively, and find that the sources appear to inhabit halos of dwarf galaxies. We estimate spin parameters, and suggest that these sources may exist in high spin parameter halos, and as such may be potential H I-rich progenitors to the ultra-diffuse galaxies observed in cluster environments.
Fabrication of Josephson Tunnel Junctions by Reactive Ion Milling.
1980-07-21
the existence of numerous oxide phases. in addition to Vb2 05 , which is the desired tunneling barrier, NbO2 , NbO, and various suboxides can form, as...interface between Nb and Vb2 0 5 in therally grown oxide films consists of RHO and RHO 2 , and poor Junction quality has been attrib- uted to such...are believed to be important in rf plasma oxidation (3), but they are not extracted by the grids of the ion mill. Beats of formation of posLtive
Pollen, Alex A; Nowakowski, Tomasz J; Shuga, Joe; Wang, Xiaohui; Leyrat, Anne A; Lui, Jan H; Li, Nianzhen; Szpankowski, Lukasz; Fowler, Brian; Chen, Peilin; Ramalingam, Naveen; Sun, Gang; Thu, Myo; Norris, Michael; Lebofsky, Ronald; Toppani, Dominique; Kemp, Darnell W; Wong, Michael; Clerkson, Barry; Jones, Brittnee N; Wu, Shiquan; Knutsson, Lawrence; Alvarado, Beatriz; Wang, Jing; Weaver, Lesley S; May, Andrew P; Jones, Robert C; Unger, Marc A; Kriegstein, Arnold R; West, Jay A A
2014-10-01
Large-scale surveys of single-cell gene expression have the potential to reveal rare cell populations and lineage relationships but require efficient methods for cell capture and mRNA sequencing. Although cellular barcoding strategies allow parallel sequencing of single cells at ultra-low depths, the limitations of shallow sequencing have not been investigated directly. By capturing 301 single cells from 11 populations using microfluidics and analyzing single-cell transcriptomes across downsampled sequencing depths, we demonstrate that shallow single-cell mRNA sequencing (~50,000 reads per cell) is sufficient for unbiased cell-type classification and biomarker identification. In the developing cortex, we identify diverse cell types, including multiple progenitor and neuronal subtypes, and we identify EGR1 and FOS as previously unreported candidate targets of Notch signaling in human but not mouse radial glia. Our strategy establishes an efficient method for unbiased analysis and comparison of cell populations from heterogeneous tissue by microfluidic single-cell capture and low-coverage sequencing of many cells.
Guo, Xiufang; Das, Mainak; Rumsey, John; Gonzalez, Mercedes; Stancescu, Maria; Hickman, James
2010-12-01
To date, the coculture of motoneurons (MNs) and skeletal muscle in a defined in vitro system has only been described in one study and that was between rat MNs and rat skeletal muscle. No in vitro studies have demonstrated human MN to rat muscle synapse formation, although numerous studies have attempted to implant human stem cells into rat models to determine if they could be of therapeutic use in disease or spinal injury models, although with little evidence of neuromuscular junction (NMJ) formation. In this report, MNs differentiated from human spinal cord stem cells, together with rat skeletal myotubes, were used to build a coculture system to demonstrate that NMJ formation between human MNs and rat skeletal muscles is possible. The culture was characterized by morphology, immunocytochemistry, and electrophysiology, while NMJ formation was demonstrated by immunocytochemistry and videography. This defined system provides a highly controlled reproducible model for studying the formation, regulation, maintenance, and repair of NMJs. The in vitro coculture system developed here will be an important model system to study NMJ development, the physiological and functional mechanism of synaptic transmission, and NMJ- or synapse-related disorders such as amyotrophic lateral sclerosis, as well as for drug screening and therapy design.
Conductivity of an atomically defined metallic interface
Oliver, David J.; Maassen, Jesse; El Ouali, Mehdi; Paul, William; Hagedorn, Till; Miyahara, Yoichi; Qi, Yue; Guo, Hong; Grütter, Peter
2012-01-01
A mechanically formed electrical nanocontact between gold and tungsten is a prototypical junction between metals with dissimilar electronic structure. Through atomically characterized nanoindentation experiments and first-principles quantum transport calculations, we find that the ballistic conduction across this intermetallic interface is drastically reduced because of the fundamental mismatch between s wave-like modes of electron conduction in the gold and d wave-like modes in the tungsten. The mechanical formation of the junction introduces defects and disorder, which act as an additional source of conduction losses and increase junction resistance by up to an order of magnitude. These findings apply to nanoelectronics and semiconductor device design. The technique that we use is very broadly applicable to molecular electronics, nanoscale contact mechanics, and scanning tunneling microscopy. PMID:23129661
NASA Technical Reports Server (NTRS)
Brock, T. W.; Field, M. B.
1979-01-01
Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.
Guan, Shane; Vignola, Joseph; Judge, John; Turo, Diego
2015-12-01
Offshore oil and gas exploration using seismic airguns generates intense underwater pulses that could cause marine mammal hearing impairment and/or behavioral disturbances. However, few studies have investigated the resulting multipath propagation and reverberation from airgun pulses. This research uses continuous acoustic recordings collected in the Arctic during a low-level open-water shallow marine seismic survey, to measure noise levels between airgun pulses. Two methods were used to quantify noise levels during these inter-pulse intervals. The first, based on calculating the root-mean-square sound pressure level in various sub-intervals, is referred to as the increment computation method, and the second, which employs the Hilbert transform to calculate instantaneous acoustic amplitudes, is referred to as the Hilbert transform method. Analyses using both methods yield similar results, showing that the inter-pulse sound field exceeds ambient noise levels by as much as 9 dB during relatively quiet conditions. Inter-pulse noise levels are also related to the source distance, probably due to the higher reverberant conditions of the very shallow water environment. These methods can be used to quantify acoustic environment impacts from anthropogenic transient noises (e.g., seismic pulses, impact pile driving, and sonar pings) and to address potential acoustic masking affecting marine mammals.
Schwann Cells in Neuromuscular Junction Formation and Maintenance.
Barik, Arnab; Li, Lei; Sathyamurthy, Anupama; Xiong, Wen-Cheng; Mei, Lin
2016-09-21
The neuromuscular junction (NMJ) is a tripartite synapse that is formed by motor nerve terminals, postjunctional muscle membranes, and terminal Schwann cells (TSCs) that cover the nerve-muscle contact. NMJ formation requires intimate communications among the three different components. Unlike nerve-muscle interaction, which has been well characterized, less is known about the role of SCs in NMJ formation and maintenance. We show that SCs in mice lead nerve terminals to prepatterned AChRs. Ablating SCs at E8.5 (i.e., prior nerve arrival at the clusters) had little effect on aneural AChR clusters at E13.5, suggesting that SCs may not be necessary for aneural clusters. SC ablation at E12.5, a time when phrenic nerves approach muscle fibers, resulted in smaller and fewer nerve-induced AChR clusters; however, SC ablation at E15.5 reduced AChR cluster size but had no effect on cluster density, suggesting that SCs are involved in AChR cluster maturation. Miniature endplate potential amplitude, but not frequency, was reduced when SCs were ablated at E15.5, suggesting that postsynaptic alterations may occur ahead of presynaptic deficits. Finally, ablation of SCs at P30, after NMJ maturation, led to NMJ fragmentation and neuromuscular transmission deficits. Miniature endplate potential amplitude was reduced 3 d after SC ablation, but both amplitude and frequency were reduced 6 d after. Together, these results indicate that SCs are not only required for NMJ formation, but also necessary for its maintenance; and postsynaptic function and structure appeared to be more sensitive to SC ablation. Neuromuscular junctions (NMJs) are critical for survival and daily functioning. Defects in NMJ formation during development or maintenance in adulthood result in debilitating neuromuscular disorders. The role of Schwann cells (SCs) in NMJ formation and maintenance was not well understood. We genetically ablated SCs during development and after NMJ formation to investigate the consequences of the ablation. This study reveals a critical role of SCs in NMJ formation as well as maintenance. Copyright © 2016 the authors 0270-6474/16/369770-12$15.00/0.
NASA Astrophysics Data System (ADS)
Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi
2018-04-01
Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.
Archaean ultra-depleted komatiites formed by hydrous melting of cratonic mantle.
Wilson, A H; Shirey, S B; Carlson, R W
2003-06-19
Komatiites are ultramafic volcanic rocks containing more than 18 per cent MgO (ref. 1) that erupted mainly in the Archaean era (more than 2.5 gigayears ago). Although such compositions occur in later periods of Earth history (for example, the Cretaceous komatiites of Gorgona Island), the more recent examples tend to have lower MgO content than their Archaean equivalents. Komatiites are also characterized by their low incompatible-element content, which is most consistent with their generation by high degrees of partial melting (30-50 per cent). Current models for komatiite genesis include the melting of rock at great depth in plumes of hot, diapirically rising mantle or the melting of relatively shallow mantle rocks at less extreme, but still high, temperatures caused by fluxing with water. Here we report a suite of ultramafic lava flows from the Commondale greenstone belt, in the southern part of the Kaapvaal Craton, which represents a previously unrecognized type of komatiite with exceptionally high forsterite content of its igneous olivines, low TiO(2)/Al(2)O(3) ratio, high silica content, extreme depletion in rare-earth elements and low Re/Os ratio. We suggest a model for their formation in which a garnet-enriched residue left by earlier cratonic volcanism was melted by hydration from a subducting slab.
Carrier transport in amorphous silicon utilizing picosecond photoconductivity
NASA Astrophysics Data System (ADS)
Johnson, A. M.
1981-08-01
The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.
Monolithic optical link in silicon-on-insulator CMOS technology.
Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan
2017-03-06
This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.
Study of Etching Pits in a Large-grain Single Cell Bulk Niobium Cavity
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhao, Xin; Ciovati, Gianluigi; Reece, Charles E.
2009-11-01
Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitativelymore » low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information on the depth and size of the pits. In addition, a survey of the samples by energy dispersive X-ray analysis (EDX) did not show any significant contamination of the samples surface.« less
Flat-plate solar array project process development area process research of non-CZ silicon material
NASA Technical Reports Server (NTRS)
1985-01-01
Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.
STAR FORMATION IN ULTRA-FAINT DWARFS: CONTINUOUS OR SINGLE-AGE BURSTS?
DOE Office of Scientific and Technical Information (OSTI.GOV)
Webster, David; Bland-Hawthorn, Joss; Sutherland, Ralph, E-mail: d.webster@physics.usyd.edu.au
2015-01-30
We model the chemical evolution of six ultra-faint dwarfs (UFDs): Bootes I, Canes Venatici II, Coma Berenices, Hercules, Leo IV, and Ursa Major I based on their recently determined star formation histories. We show that two single-age bursts cannot explain the observed [α/Fe] versus [Fe/H] distribution in these galaxies and that some self-enrichment is required within the first burst. An alternative scenario is modeled, in which star formation is continuous except for short interruptions when one or more supernovae temporarily blow the dense gas out from the center of the system. This model allows for self-enrichment and can reproduce themore » chemical abundances of the UFDs in which the second burst is only a trace population. We conclude that the most likely star formation history is one or two extended periods of star formation, with the first burst lasting for at least 100 Myr. As found in earlier work, the observed properties of UFDs can be explained by formation at a low mass (M{sub vir}∼10{sup 7} M{sub ⊙}), rather than being stripped remnants of much larger systems.« less
NASA Astrophysics Data System (ADS)
Buchs, David M.; Williams, Rebecca; Sano, Shin-ichi; Wright, V. Paul
2018-05-01
Guyots are large seamounts with a flat summit that is generally believed to form due to constructional biogenic and/or erosional processes during the formation of volcanic islands. However, despite their large abundance in the oceans, there are still very few direct constraints on the nature and formation of guyots, in particular those formed at high latitude that lack a thick cap of shallow-marine carbonate rocks. It is largely accepted based on geophysical constraints and surficial observations/sampling that the summit platform of these guyots is shaped by wave abrasion during post-volcanic subsidence of volcanic islands. Here we provide novel constraints on this hypothesis and the summit geology of guyots with a lithostratigraphic analysis of cores from three Louisville seamounts (South Pacific) collected during Expedition 330 of the Integrated Ocean Drilling Program (IODP). Thirteen lithofacies of sedimentary and volcanic deposits are described, which include facies not previously recognized on the top of guyots, and offer a new insight into the formation of high-latitude oceanic islands on a fast-moving plate. Our results reveal that the lithostratigraphy of Louisville seamounts preserves a very consistent record of the formation and drowning of volcanic islands, with from bottom to top: (i) volcaniclastic sequences with abundant lava-fed delta deposits, (ii) submarine to subaerial shield lava flows, (iii) post-volcanic shallow to deeper marine sedimentary rocks lacking thick reef deposits, (iv) post-erosional rejuvenated volcanic rocks, and (v) pelagic sediments. Recognition of erosional boundaries between subaerial lava flows and shallow-marine sedimentary rocks provides novel support for post-volcanic wave planation of guyots. However, the summit geology of Louisville seamounts is dissimilar to that of high-latitude Hawaiian-Emperor guyots that have emplaced in a similar tectonic and environmental setting and that include thicker lava stacks with apparently little lava-fed delta deposits. To explain observed lithostratigraphic discrepancy we propose that Louisville seamounts represent a distinct type of intraplate ocean volcano characterized by formation of a smaller island, with a central shield volcano surrounded by extended shallow-marine shelves formed by lava-fed deltas. In this interpretation the summit platform of Louisville-type guyots results from early (syn-volcanic) subaerial to shallow-marine constructional volcanic processes and marine erosion, enhanced by later (post-volcanic) wave planation. This contrasts with larger Hawaiian edifices that are capped by thicker shield volcanoes, and that develop an extended wave planation surface during post-volcanic subsidence (in the absence of efficient coral growth). The difference between Hawaiian- and Louisville-type volcanic islands and guyots can be explained by contrasted dynamic disequilibrium between magmatic growth, erosion, and subsidence during the island-building stage. Unlike Hawaiian-type volcanoes, Louisville seamounts are characterized by alkaline magmatism that extends from the late seamount to island stages. This supports more limited magmatic growth during the formation of Louisville islands, and we hypothesize that this promotes the formation of ephemeral shallow-marine platforms and extended lava-fed deltas. Hawaiian-type volcanoes and guyots are unusually large in the population of intraplate ocean volcanoes. Louisville-type guyots as defined in this study could therefore represent a very common but yet poorly documented mode of oceanic island formation in the Pacific Ocean and other similar fast-moving plate settings.
The origin of high hydrocarbon groundwater in shallow Triassic aquifer in Northwest Guizhou, China.
Liu, Shan; Qi, Shihua; Luo, Zhaohui; Liu, Fangzhi; Ding, Yang; Huang, Huanfang; Chen, Zhihua; Cheng, Shenggao
2018-02-01
Original high hydrocarbon groundwater represents a kind of groundwater in which hydrocarbon concentration exceeds 0.05 mg/L. The original high hydrocarbon will significantly reduce the environment capacity of hydrocarbon and lead environmental problems. For the past 5 years, we have carried out for a long-term monitoring of groundwater in shallow Triassic aquifer in Northwest Guizhou, China. We found the concentration of petroleum hydrocarbon was always above 0.05 mg/L. The low-level anthropogenic contamination cannot produce high hydrocarbon groundwater in the area. By using hydrocarbon potential, geochemistry and biomarker characteristic in rocks and shallow groundwater, we carried out a comprehensive study in Dalongjing (DLJ) groundwater system to determine the hydrocarbon source. We found a simplex hydrogeology setting, high-level water-rock-hydrocarbon interaction and obviously original hydrocarbon groundwater in DLJ system. The concentration of petroleum hydrocarbon in shallow aquifer was found to increase with the strong water-rock interaction. Higher hydrocarbon potential was found in the upper of Guanling formation (T 2 g 3 ) and upper of Yongningzhen formation (T 1 yn 4 ). Heavily saturated carbon was observed from shallow groundwater, which presented similar distribution to those from rocks, especially from the deeper groundwater. These results indicated that the high concentrations of original hydrocarbon in groundwater could be due to the hydrocarbon release from corrosion and extraction out of strata over time.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Harvey, E.W.
Study of late Pleistocene-age sediments near the mouth of the Mad River revealed a sequence of nearshore marine and shallow bay deposits. This sequence, bounded by unconformities, is informally named the Mouth of Mad unit. The Mouth of mad unit can be divided into four distinct depositional facies at the study site. The lowest facies are the Nearshore Sand and Estuarine Mud, which lie unconformably on a paleosol. The sand facies grades upward into a high-energy, interbedded Nearshore Sand and Gravel facies containing storm and rip-channel deposits. Above the sand and gravel is a Strand-Plain Sand facies. This sand ismore » overlain by a laterally variable sequence of shell-rich Bay facies. The bay deposits can be further divided into five subfacies: (1) a Bioturbated Sand; (2) a Lower Tidal Flat Mud; (3) a Mixed Sand and Mud; (4) an oyster-rich Bay Mud; and (5) an Upper Tidal Flat Mud. The bay sequence is overlain unconformably by younger late Pleistocene-age marine terrace deposits. The depositional environments represented by these facies progress from a shoreline estuary to nearshore deposits, above storm wave base, and slowly back to shoreline and finally shallow bay conditions. The Mouth of Mad unit represents a transgressive-regressive sequence, involving the development of a protective spit. The uppermost mud within the Mouth of Mad unit has been dated, using thermoluminescence age estimation, at 176 [+-] 33 ka, placing it in the late Pleistocene. The Mouth of Mad unit appears to be younger than the fossiliferous deposits at Elk Head, Crannell Junction, Trinidad Head, Moonstone Beach, and the Falor Formation near Maple Creek, and possibly time equivalent with gravel deposits exposed at the western end of School Road in McKinleyville.« less
Karst geomorphology and hydrology of the Shenandoah Valley near Harrisonburg, Virginia
Doctor, Daniel H.; Orndorff, Wil; Maynard, Joel; Heller, Matthew J.; Casile, Gerolamo C.
2014-01-01
The karst of the central Shenandoah Valley has characteristics of both shallow and deep phreatic formation. This field guide focuses on the region around Harrisonburg, Virginia, where a number of these karst features and their associated geologic context can be examined. Ancient, widespread alluvial deposits cover much of the carbonate bedrock on the western side of the valley, where shallow karstification has resulted in classical fluviokarst development. However, in upland exposures of carbonate rock, isolated caves exist atop hills not affected by surface processes other than exposure during denudation. The upland caves contain phreatic deposits of calcite and fine-grained sediments. They lack any evidence of having been invaded by surface streams. Recent geologic mapping and LIDAR (light detection and ranging) elevation data have enabled interpretive association between bedrock structure, igneous intrusions, silicification and brecciation of host carbonate bedrock, and the location of several caves and karst springs. Geochemistry, water quality, and water temperature data support the broad categorization of springs into those affected primarily by shallow near-surface recharge, and those sourced deeper in the karst aquifer. The deep-seated karst formation occurred in the distant past where subvertical fracture and fault zones intersect thrust faults and/or cross-strike faults, enabling upwelling of deep-circulating meteoric groundwater. Most caves formed in such settings have been overprinted by later circulation of shallow groundwater, thus removing evidence of the history of earliest inception; however, several caves do preserve evidence of an earlier formation.
A program continuation to develop processing procedures for advanced silicon solar cells
NASA Technical Reports Server (NTRS)
Avery, J. E.; Scott-Monck, J. A.
1976-01-01
Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.
NASA Technical Reports Server (NTRS)
Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.
1975-01-01
Ten ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.
Development of a (Hg, Cd)Te photodiode detector, Phase 2. [for 10.6 micron spectral region
NASA Technical Reports Server (NTRS)
1972-01-01
High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.
Drops and Bubble in Materials Science
NASA Technical Reports Server (NTRS)
Doremus, R. H.
1982-01-01
The formation of extended p-n junctions in semiconductors by drop migration, mechanisms and morphologies of migrating drops and bubbles in solids and nucleation and corrections to the Volmer-Weber equations are discussed. Bubble shrinkage in the processing of glass, the formation of glass microshells as laser-fusion targets, and radiation-induced voids in nuclear reactors were examined.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Imamura, Masafumi; Department of Pathology, Sapporo Medical University School of Medicine, S1. W17. Sapporo 060-8556; Kojima, Takashi
2007-05-15
In rodent livers, integral tight junction (TJ) proteins claudin-1, -2, -3, -5 and -14 are detected and play crucial roles in the barrier to keep bile in bile canaculi away from the blood circulation. Claudin-2 shows a lobular gradient increasing from periportal to pericentral hepatocytes, whereas claudin-1 and -3 are expressed in the whole liver lobule. Although claudin-2 expression induces cation-selective channels in tight junctions of epithelial cells, the physiological functions and regulation of claudin-2 in hepatocytes remain unclear. Oncostatin M (OSM) is a multifunctional cytokine implicated in the differentiation of hepatocytes that induces formation of E-cadherin-based adherens junctions inmore » fetal hepatocytes. In this study, we examined whether OSM could induce expression and function of claudin-2 in rodent hepatocytes, immortalized mouse and primary cultured proliferative rat hepatocytes. In the immortalized mouse and primary cultured proliferative rat hepatocytes, treatment with OSM markedly increased mRNA and protein of claudin-2 together with formation of developed networks of TJ strands. The increase of claudin-2 enhanced the paracellular barrier function which depended on molecular size. The increase of claudin-2 expression induced by OSM in rodent hepatocytes was regulated through distinct signaling pathways including PKC. These results suggest that expression of claudin-2 in rodent hepatocytes may play a specific role as controlling the size of paracellular permeability in the barrier to keep bile in bile canaculi.« less
Cohen, L; Sekler, I; Hershfinkel, M
2014-01-01
The intestinal epithelium is a renewable tissue that requires precise balance between proliferation and differentiation, an essential process for the formation of a tightly sealed barrier. Zinc deficiency impairs the integrity of the intestinal epithelial barrier and is associated with ulcerative and diarrheal pathologies, but the mechanisms underlying the role of Zn2+ are not well understood. Here, we determined a role of the colonocytic Zn2+ sensing receptor, ZnR/GPR39, in mediating Zn2+-dependent signaling and regulating the proliferation and differentiation of colonocytes. Silencing of ZnR/GPR39 expression attenuated Zn2+-dependent activation of ERK1/2 and AKT as well as downstream activation of mTOR/p70S6K, pathways that are linked with proliferation. Consistently, ZnR/GPR39 silencing inhibited HT29 and Caco-2 colonocyte proliferation, while not inducing caspase-3 cleavage. Remarkably, in differentiating HT29 colonocytes, silencing of ZnR/GPR39 expression inhibited alkaline phosphatase activity, a marker of differentiation. Furthermore, Caco-2 colonocytes showed elevated expression of ZnR/GPR39 during differentiation, whereas silencing of ZnR/GPR39 decreased monolayer transepithelial electrical resistance, suggesting compromised barrier formation. Indeed, silencing of ZnR/GPR39 or chelation of Zn2+ by the cell impermeable chelator CaEDTA was followed by impaired expression of the junctional proteins, that is, occludin, zonula-1 (ZO-1) and E-cadherin. Importantly, colon tissues of GPR39 knockout mice also showed a decrease in expression levels of ZO-1 and occludin compared with wildtype mice. Altogether, our results indicate that ZnR/GPR39 has a dual role in promoting proliferation of colonocytes and in controlling their differentiation. The latter is followed by ZnR/GPR39-dependent expression of tight junctional proteins, thereby leading to formation of a sealed intestinal epithelial barrier. Thus, ZnR/GPR39 may be a therapeutic target for promoting epithelial function and tight junction barrier integrity during ulcerative colon diseases. PMID:24967969
Cohen, L; Sekler, I; Hershfinkel, M
2014-06-26
The intestinal epithelium is a renewable tissue that requires precise balance between proliferation and differentiation, an essential process for the formation of a tightly sealed barrier. Zinc deficiency impairs the integrity of the intestinal epithelial barrier and is associated with ulcerative and diarrheal pathologies, but the mechanisms underlying the role of Zn(2+) are not well understood. Here, we determined a role of the colonocytic Zn(2+) sensing receptor, ZnR/GPR39, in mediating Zn(2+)-dependent signaling and regulating the proliferation and differentiation of colonocytes. Silencing of ZnR/GPR39 expression attenuated Zn(2+)-dependent activation of ERK1/2 and AKT as well as downstream activation of mTOR/p70S6K, pathways that are linked with proliferation. Consistently, ZnR/GPR39 silencing inhibited HT29 and Caco-2 colonocyte proliferation, while not inducing caspase-3 cleavage. Remarkably, in differentiating HT29 colonocytes, silencing of ZnR/GPR39 expression inhibited alkaline phosphatase activity, a marker of differentiation. Furthermore, Caco-2 colonocytes showed elevated expression of ZnR/GPR39 during differentiation, whereas silencing of ZnR/GPR39 decreased monolayer transepithelial electrical resistance, suggesting compromised barrier formation. Indeed, silencing of ZnR/GPR39 or chelation of Zn(2+) by the cell impermeable chelator CaEDTA was followed by impaired expression of the junctional proteins, that is, occludin, zonula-1 (ZO-1) and E-cadherin. Importantly, colon tissues of GPR39 knockout mice also showed a decrease in expression levels of ZO-1 and occludin compared with wildtype mice. Altogether, our results indicate that ZnR/GPR39 has a dual role in promoting proliferation of colonocytes and in controlling their differentiation. The latter is followed by ZnR/GPR39-dependent expression of tight junctional proteins, thereby leading to formation of a sealed intestinal epithelial barrier. Thus, ZnR/GPR39 may be a therapeutic target for promoting epithelial function and tight junction barrier integrity during ulcerative colon diseases.
NASA Astrophysics Data System (ADS)
Phan, T. T.; Sharma, S.; Gardiner, J. B.; Thomas, R. B.; Stuckman, M.; Spaulding, R.; Lopano, C. L.; Hakala, A.
2017-12-01
Potential CO2 and brine migration or leakage into shallow groundwater is a critical issue associated with CO2 injection at both enhanced oil recovery (EOR) and carbon sequestration sites. The effectiveness of multiple isotope systems (δ18OH2O, δ13C, δ7Li, 87Sr/86Sr) in monitoring CO2 and brine leakage at a CO2-EOR site located within the Permian basin (Seminole, Texas, USA) was studied. Water samples collected from an oil producing formation (San Andres), a deep groundwater formation (Santa Rosa), and a shallow groundwater aquifer (Ogallala) over a four-year period were analyzed for elemental and isotopic compositions. The absence of any change in δ18OH2O or δ13CDIC values of water in the overlying Ogallala aquifer after CO2 injection indicates that injected CO2 did not leak into this aquifer. The range of Ogallala water δ7Li (13-17‰) overlaps the San Andres water δ7Li (13-15‰) whereas 87Sr/86Sr of Ogallala (0.70792±0.00005) significantly differs from San Andres water (0.70865±0.00003). This observation demonstrates that Sr isotopes are much more sensitive than Li isotopes in tracking brine leakage into shallow groundwater at the studied site. In contrast, deep groundwater δ7Li (21-25‰) is isotopically distinct from San Andres produced water; thus, monitoring this intermitted formation water can provide an early indication of CO2 injection-induced brine migration from the underlying oil producing formation. During water alternating with gas (WAG) operations, a significant shift towards more positive δ13CDIC values was observed in the produced water from several of the San Andres formation wells. The carbon isotope trend suggests that the 13C enriched injected CO2 and formation carbonates became the primary sources of dissolved inorganic carbon in the area surrounding the injection wells. Moreover, one-way ANOVA statistical analysis shows that the differences in δ7Li (F(1,16) = 2.09, p = 0.17) and 87Sr/86Sr (F(1,18) = 4.47, p = 0.05) values of shallow groundwater collected before and during the WAG period are not statistically significant. The results to date suggest that the water chemistry of shallow groundwater has not been influenced by the CO2 injection activities. The efficacy of each isotope system as a monitoring tool will be evaluated and discussed using a Bayesian mixing model.
NASA Astrophysics Data System (ADS)
Sun, Pei; Fang, Zhigang Zak; Koopman, Mark; Xia, Yang; Paramore, James; Ravi Chandran, K. S.; Ren, Yang; Lu, Jun
2015-12-01
The hydrogen sintering and phase transformation (HSPT) process is a novel powder metallurgy method for producing Ti alloys, particularly the Ti-6Al-4V alloy, with ultra-fine microstructure in the as-sintered state. The ultra-fine microstructure is obtained as a direct result of the use of H2 gas during sintering. The refinement of the microstructure during HSPT is similar to that of thermal hydrogen processing (THP) of bulk Ti alloys. For both THP and HSPT of Ti-6Al-4V alloy, the mechanisms of the grain refinement depend on the phase equilibria and phase transformations in the presence of hydrogen, which are surprisingly still not well established to date and are still subjected to research and debate. In recent work by the present authors, a pseudo-binary phase diagram of (Ti-6Al-4V)-H has been determined by using in situ synchrotron XRD and TGA/DSC techniques. Aided by this phase diagram, the current paper focuses on the series of phase transformations during sintering and cooling of Ti-6Al-4V in a hydrogen atmosphere and the mechanisms for the formation of the ultra-fine microstructures obtained. Using experimental techniques, including in situ synchrotron XRD, SEM, EBSD, and TEM, the microstructural refinement was found to be the result of (1) the precipitation of ultra-fine α/α2 within coarse β grains during an isothermal hold at intermediate temperatures, and (2) the eutectoid transformation of β → α + δ at approximately 473 K (200 °C).
The Origin of Ultra-Faint Galaxies
NASA Astrophysics Data System (ADS)
Sand, David
2017-08-01
We request 24 orbits of HST/ACS to obtain imaging in F606W and F814W of apparent tidal features in two ultra-faint dwarf galaxies: Hercules and Leo V. This will enable us to test whether the stars in ultra- faint galaxies-as a population-have been affected by Galactic tides. Most of the new dwarfs show signs of tidal interaction in ground-based photometry, several have measured ellipticities greater than 0.5, and kinematics of a subset show velocity gradients. These ubiquitous hints for tidal effects among distant dwarfs is particularly surprising and suggestive. If most ultra-faint dwarfs are disturbed by tides, then recent tests of galaxy formation in the near field have unstable foundations.HST resolution provides an opportunity to assess whether tidal features (accompanied by tentative kinematic gradients) seen in ground-based observations of Hercules and Leo V are genuine or are instead clumps of compact background galaxies masquerading as stellar debris. In Hercules, a further test is possible: searching for a distance gradient along the stretched body of the galaxy. Parallel pointings will sample similar dwarf-centric radii away from the tidal features, assuring an unambiguous result. Whether we confirm or rule out the presence of stellar loss in these objects, the consequences are important-the origin of the ultra-faint dwarfs tells us the lower limit to both galaxy formation and the number of dark matter subhalos inhabiting the Milky Way.This program is only possible with HST: its exquisite resolution can separate compact galaxies from main sequence dwarf stars at faint magnitudes, which even the best multi-band ground-based schemes struggle with.
From Offshore to Onshore: Multiple Origins of Shallow-Water Corals from Deep-Sea Ancestors
Lindner, Alberto; Cairns, Stephen D.; Cunningham, Clifford W.
2008-01-01
Shallow-water tropical reefs and the deep sea represent the two most diverse marine environments. Understanding the origin and diversification of this biodiversity is a major quest in ecology and evolution. The most prominent and well-supported explanation, articulated since the first explorations of the deep sea, holds that benthic marine fauna originated in shallow, onshore environments, and diversified into deeper waters. In contrast, evidence that groups of marine organisms originated in the deep sea is limited, and the possibility that deep-water taxa have contributed to the formation of shallow-water communities remains untested with phylogenetic methods. Here we show that stylasterid corals (Cnidaria: Hydrozoa: Stylasteridae)—the second most diverse group of hard corals—originated and diversified extensively in the deep sea, and subsequently invaded shallow waters. Our phylogenetic results show that deep-water stylasterid corals have invaded the shallow-water tropics three times, with one additional invasion of the shallow-water temperate zone. Our results also show that anti-predatory innovations arose in the deep sea, but were not involved in the shallow-water invasions. These findings are the first robust evidence that an important group of tropical shallow-water marine animals evolved from deep-water ancestors. PMID:18560569
Jiang, Zhuoling; Wang, Hao; Shen, Ziyong; Sanvito, Stefano; Hou, Shimin
2016-07-28
The atomic structure and electronic transport properties of a single hydrogen molecule connected to both symmetric and asymmetric Cu electrodes are investigated by using the non-equilibrium Green's function formalism combined with the density functional theory. Our calculations show that in symmetric Cu-H2-Cu junctions, the low-bias conductance drops rapidly upon stretching, while asymmetric ones present a low-bias conductance spanning the 0.2-0.3 G0 interval for a wide range of electrode separations. This is in good agreement with experiments on Cu atomic contacts in a hydrogen environment. Furthermore, the distribution of the calculated vibrational energies of the two hydrogen atoms in the asymmetric Cu-H2-Cu junction is also consistent with experiments. These findings provide clear evidence for the formation of asymmetric Cu-H2-Cu molecular junctions in breaking Cu atomic contacts in the presence of hydrogen and are also helpful for the design of molecular devices with Cu electrodes.
Binding configurations and intramolecular strain in single-molecule devices.
Rascón-Ramos, Habid; Artés, Juan Manuel; Li, Yuanhui; Hihath, Joshua
2015-05-01
The development of molecular-scale electronic devices has made considerable progress over the past decade, and single-molecule transistors, diodes and wires have all been demonstrated. Despite this remarkable progress, the agreement between theoretically predicted conductance values and those measured experimentally remains limited. One of the primary reasons for these discrepancies lies in the difficulty to experimentally determine the contact geometry and binding configuration of a single-molecule junction. In this Article, we apply a small-amplitude, high-frequency, sinusoidal mechanical signal to a series of single-molecule devices during junction formation and breakdown. By measuring the current response at this frequency, it is possible to determine the most probable binding and contact configurations for the molecular junction at room temperature in solution, and to obtain information about how an applied strain is distributed within the molecular junction. These results provide insight into the complex configuration of single-molecule devices, and are in excellent agreement with previous predictions from theoretical models.
Baranwal, Somesh
2015-01-01
Adherens junctions (AJs) and tight junctions (TJs) are crucial regulators of the integrity and restitution of the intestinal epithelial barrier. The structure and function of epithelial junctions depend on their association with the cortical actin cytoskeleton that, in polarized epithelial cells, is represented by a prominent perijunctional actomyosin belt. The assembly and stability of the perijunctional cytoskeleton is controlled by constant turnover (disassembly and reassembly) of actin filaments. Actin-interacting protein (Aip) 1 is an emerging regulator of the actin cytoskeleton, playing a critical role in filament disassembly. In this study, we examined the roles of Aip1 in regulating the structure and remodeling of AJs and TJs in human intestinal epithelium. Aip1 was enriched at apical junctions in polarized human intestinal epithelial cells and normal mouse colonic mucosa. Knockdown of Aip1 by RNA interference increased the paracellular permeability of epithelial cell monolayers, decreased recruitment of AJ/TJ proteins to steady-state intercellular contacts, and attenuated junctional reassembly in a calcium-switch model. The observed defects of AJ/TJ structure and functions were accompanied by abnormal organization and dynamics of the perijunctional F-actin cytoskeleton. Moreover, loss of Aip1 impaired the apico-basal polarity of intestinal epithelial cell monolayers and inhibited formation of polarized epithelial cysts in 3-D Matrigel. Our findings demonstrate a previously unanticipated role of Aip1 in regulating the structure and remodeling of intestinal epithelial junctions and early steps of epithelial morphogenesis. PMID:25792565
Lechuga, Susana; Baranwal, Somesh; Ivanov, Andrei I
2015-05-01
Adherens junctions (AJs) and tight junctions (TJs) are crucial regulators of the integrity and restitution of the intestinal epithelial barrier. The structure and function of epithelial junctions depend on their association with the cortical actin cytoskeleton that, in polarized epithelial cells, is represented by a prominent perijunctional actomyosin belt. The assembly and stability of the perijunctional cytoskeleton is controlled by constant turnover (disassembly and reassembly) of actin filaments. Actin-interacting protein (Aip) 1 is an emerging regulator of the actin cytoskeleton, playing a critical role in filament disassembly. In this study, we examined the roles of Aip1 in regulating the structure and remodeling of AJs and TJs in human intestinal epithelium. Aip1 was enriched at apical junctions in polarized human intestinal epithelial cells and normal mouse colonic mucosa. Knockdown of Aip1 by RNA interference increased the paracellular permeability of epithelial cell monolayers, decreased recruitment of AJ/TJ proteins to steady-state intercellular contacts, and attenuated junctional reassembly in a calcium-switch model. The observed defects of AJ/TJ structure and functions were accompanied by abnormal organization and dynamics of the perijunctional F-actin cytoskeleton. Moreover, loss of Aip1 impaired the apico-basal polarity of intestinal epithelial cell monolayers and inhibited formation of polarized epithelial cysts in 3-D Matrigel. Our findings demonstrate a previously unanticipated role of Aip1 in regulating the structure and remodeling of intestinal epithelial junctions and early steps of epithelial morphogenesis. Copyright © 2015 the American Physiological Society.
Perez Velazquez, Jose L; Kokarovtseva, Larisa; Sarbaziha, Raheleh; Jeyapalan, Zina; Leshchenko, Yevgen
2006-01-01
While there is evidence that gap junctions play important roles in the determination of cell injuries, there is not much known about mechanisms by which gap junctional communication may exert these functions. Using a global model of transient ischaemia in rats, we found that pretreatment with the gap junctional blockers carbenoxolone, 18alpha-glycyrrhetinic acid and endothelin, applied via cannulae implanted into the hippocampus in one hemisphere, resulted in decreased numbers of TUNEL-positive neurons, as compared with the contralateral hippocampus that received saline injection. Post-treatment with carbenoxolone for up to 30 min after the stroke injury still resulted in decreased cell death, but post-treatment at 90 min after the ischaemic insult did not result in differences in cell death. However, quinine, an inhibitor of Cx36-mediated gap junctional coupling, did not result in appreciable neuroprotection. Searching for a possible mechanism for the observed protective effects, possible actions of the gap junctional blockers in the electrical activity of the hippocampus during the ischaemic insult were assessed using intracerebral recordings, with no differences observed between the saline-injected and the contralateral drug-injected hippocampus. However, a significant reduction in lipid peroxides, a measure of free radical formation, in the hippocampus treated with carbenoxolone, revealed that the actions of gap junctional coupling during injuries may be causally related to oxidative stress. These observations suggest that coupling in glial networks may be functionally important in determining neuronal vulnerability to oxidative injuries.
Fine structure of the ependyma and intercellular junctions in the area postrema of the rat.
Gotow, T; Hashimoto, P H
1979-09-03
Ependymal cells and their junctional complexes in the area postrema of the rat were studied in detail by tracer experiments using horseradish peroxidase (HRP) and colloidal lanthanum and by freeze-etch techniques, in addition to routine electron microscopy. The ependyma of the area postrema is characterized as flattened cells possessing very few cilia, a moderate amount of microvilli, a well-developed Golgi apparatus and rough endoplasmic reticulum. Numerous vesicles or tubular formations with internal dense content were found to accumulate in the basal processes of ependymal cells; the basal process makes contact with the perivascular basal lamina. It is suggested that the dense material in the tubulovesicular formations is synthesized within the ependymal cell and discharged into the perivascular space. The apical junctions between adjacent ependymal cells display very close apposition, with a gap of 2--3 nm, but no fusion of adjacent plasma membranes; they thus represent a transitional form between the zonulae adhaerentes present in the ordinary mural ependyma and the zonulae occludentes in the choroidal epithelium. A direct intercommunication between the ventricular cerebrospinal fluid (CSF) and the blood vascular system indicates that a region exists lacking a blood-ventricular CSF barrier.
Effects of Osmolality on Paracellular Transport in MDCK II Cells
Hirai, Toyohiro; Furuse, Mikio
2016-01-01
Epithelia separate apical and basal compartments, and movement of substances via the paracellular pathway is regulated by tight junctions. Claudins are major constituents of tight junctions and involved in the regulation of tight junction permeability. On the other hand, the osmolality in the extracellular environment fluctuates in association with life activity. However, effects of osmotic changes on the permeaibility of claudins are poorly understood. Therefore, we investigated the effects of osmotic changes on the paracellular transport in MDCK II cells. Interestingly, apical hyposmolality decreased cation selectivity in the paracellular pathway gradually with time, and the elimination of the osmotic gradient promptly restored the cation selectivity. Apical hyposmolality also induced bleb formation at cell-cell contacts and changed the shape of cell-cell contacts from a jagged pattern to a slightly linear pattern. In claudin-2 knockout MDCK II cells, the decrease of cation selectivity, the bleb formation, nor the changes in the shape of cell-cell contacts was observed under the apical hyposmolality. Our findings in this study indicate that osmotic gradient between apical and basal sides is involved in the acute regulation of the cation selective property of claudin-2 channels. PMID:27855213
Mahalwar, Prateek; Singh, Ajeet Pratap; Fadeev, Andrey; Nüsslein-Volhard, Christiane; Irion, Uwe
2016-11-15
The conspicuous striped coloration of zebrafish is produced by cell-cell interactions among three different types of chromatophores: black melanophores, orange/yellow xanthophores and silvery/blue iridophores. During color pattern formation xanthophores undergo dramatic cell shape transitions and acquire different densities, leading to compact and orange xanthophores at high density in the light stripes, and stellate, faintly pigmented xanthophores at low density in the dark stripes. Here, we investigate the mechanistic basis of these cell behaviors in vivo, and show that local, heterotypic interactions with dense iridophores regulate xanthophore cell shape transition and density. Genetic analysis reveals a cell-autonomous requirement of gap junctions composed of Cx41.8 and Cx39.4 in xanthophores for their iridophore-dependent cell shape transition and increase in density in light-stripe regions. Initial melanophore-xanthophore interactions are independent of these gap junctions; however, subsequently they are also required to induce the acquisition of stellate shapes in xanthophores of the dark stripes. In summary, we conclude that, whereas homotypic interactions regulate xanthophore coverage in the skin, their cell shape transitions and density is regulated by gap junction-mediated, heterotypic interactions with iridophores and melanophores. © 2016. Published by The Company of Biologists Ltd.
Conceptual hydrogeologic framework of the shallow aquifer system at Virginia Beach, Virginia
Smith, Barry S.; Harlow, George E.
2002-01-01
The hydrogeologic framework of the shallow aquifer system at Virginia Beach was revised to provide a better understanding of the distribution of fresh ground water, its potential use, and its susceptibility to contamination. The revised conceptual framework is based primarily on analyses of continuous cores and downhole geophysical logs collected at 7 sites to depths of approximately 200 ft.The shallow aquifer system at Virginia Beach is composed of the Columbia aquifer, the Yorktown confining unit, and the Yorktown-East-over aquifer. The shallow aquifer system is separated from deeper units by the continuous St. Marys confining unit.The Columbia aquifer is defined as the predominantly sandy surficial deposits above the Yorktown confining unit. The Yorktown confining unit is composed of a series of very fine sandy to silty clay units of various colors at or near the top of the Yorktown Formation. The Yorktown confining unit varies in thickness and in composition, but on a regional scale is a leaky confining unit. The Yorktown-Eastover aquifer is defined as the predominantly sandy deposits of the Yorktown Formation and the upper part of the Eastover Formation above the confining clays of the St. Marys Formation. The limited areal extent of highly permeable deposits containing freshwater in the Yorktown-Eastover aquifer precludes the installation of highly productive freshwater wells over most of the city. Some deposits of biofragmental sand or shell hashes in the Yorktown-Eastover aquifer can support high-capacity wells.A water sample was collected from each of 10 wells installed at 5 of the 7 core sites to determine the basic chemistry of the aquifer system. One shallow well and one deep well was installed at each site. Concentrations of chloride were higher in the water from the deeper well at each site. Concentrations of dissolved iron in all of the water samples were higher than the U.S. Environmental Protection Agency Secondary Drinking Water Regulations. Concentrations of manganese and chloride were higher than the Secondary Drinking Water Regulations in samples from some wells.In the humid climate of Virginia Beach, the periodic recharge of freshwater through the sand units of the shallow aquifer system occurs often enough to create a dynamic equilibrium whereby freshwater flows continually down and away from the center of the ridges to mix with and sweep brackish water and saltwater back toward the tidal rivers, bays, salt marshes, and the Atlantic Ocean.The aquifers and confining units of the shallow aquifer system at Virginia Beach are heterogeneous, discontinuous, and without exact marker beds, which makes correlations in the study area difficult. Investigations using well cuttings, spot cores, or split-spoon samples with geophysical logs are not as definitive as continuous cores for determining or correlating hydrogeologic units. Future investigations of the shallow aquifer system would benefit by collecting continuous cores.
Silurian and Devonian in Vietnam—Stratigraphy and facies
NASA Astrophysics Data System (ADS)
Thanh, Tống Duy; Phương, Tạ Hoàng; Janvier, Philippe; Hùng, Nguyễn Hữu; Cúc, Nguyễn Thị Thu; Dương, Nguyễn Thùy
2013-09-01
Silurian and Devonian deposits in Viet Nam are present in several zones and regions, including Quang Ninh, East Bac Bo, and West Bac Bo Zones of the Bac Bo Region, the Dien Bien-Nghe An and Binh Tri Thien Zones of the Viet-Lao Region, and the South Trung Bo, and Western Nam Bo Zones of the South Viet Nam Region (Fig. 1). The main lithological features and faunal composition of the Silurian and Devonian Units in all these zones are briefly described. The Silurian consists of deep-water deposits of the upper parts of the Co To and Tan Mai Formations in the Quang Ninh Zone, the upper parts of the Phu Ngu Formation in the East Bac Bo Zone and the upper parts of the Long Dai and Song Ca Formations in the Viet-Lao Region. Shallow water facies Silurian units containing benthic faunas are more widely distributed, including the upper part of the Sinh Vinh and Bo Hieng Formations in the West Bac Bo Zone, the Kien An Formation in the Quang Ninh Zone, and, in the Viet-Lao Region, the Dai Giang Formation and the upper part of the Tay Trang Formation. No Lower and Middle Devonian deposits indicate deep water facies, but they are characterized by different shallow water facies. Continental to near shore, deltaic facies characterize the Lower Devonian Song Cau Group in the East Bac Bo Zone, the Van Canh Formation in the Quang Ninh Zone, and the A Choc Formation in the Binh Tri Thien Zone. Similar facies also occur in the Givetian Do Son Formation of the Quang Ninh Zone, and the Tan Lap Formation in the East Bac Bo Zone, and consist of coarse terrigenous deposits—cross-bedded conglomerates, sandstone, etc. Most Devonian units are characterized by shallow marine shelf facies. Carbonate and terrigenous-carbonate facies dominate, and terrigenous facies occur in the Lower and Middle Devonian sections in some areas only. The deep-water-like facies is characteriztic for some Upper Devonian formations in the Bac Bo (Bang Ca and Toc Tat Formations) and Viet-Lao Regions (Thien Nhan and Xom Nha Formations). These formations contain cherty shale or siliceous limestone, and fossils consist of conodonts, but there are also brachiopods and other benthos. They were possibly deposited in a deep water environment on the slope of the continental shelf. Most Devonian units distributed in the North and the Central Viet Nam consist of self shallow water sediments, and apparently they were deposited in a passive marginal marine environment. The coarse clastic continental or subcontinental deposits are distributed only in some areas of the East Bac Bo and of the Quang Ninh zones of the Bac Bo Region, and in the south of the Binh Tri Thien Zone. This situation suggests the influence of the Caledonian movement at the end of the Silurian period that called the Guangxi movement in South China.
NASA Astrophysics Data System (ADS)
Parsa, Shaghayegh; Dunlop, James S.; McLure, Ross J.; Mortlock, Alice
2016-03-01
We present a new, robust measurement of the evolving rest-frame ultraviolet (UV) galaxy luminosity function (LF) over the key redshift range from z ≃ 2 to z ≃ 4. Our results are based on the high dynamic range provided by combining the Hubble Ultra Deep Field (HUDF), CANDELS/GOODS-South, and UltraVISTA/COSMOS surveys. We utilize the unparalleled multifrequency photometry available in this survey `wedding cake' to compile complete galaxy samples at z ≃ 2, 3, 4 via photometric redshifts (calibrated against the latest spectroscopy) rather than colour-colour selection, and to determine accurate rest-frame UV absolute magnitudes (M1500) from spectral energy distribution (SED) fitting. Our new determinations of the UV LF extend from M1500 ≃ -22 (AB mag) down to M1500 = -14.5, -15.5 and -16 at z ≃ 2, 3 and 4, respectively (thus, reaching ≃ 3-4 mag fainter than previous blank-field studies at z ≃ 2,3). At z ≃ 2, 3, we find a much shallower faint-end slope (α = -1.32 ± 0.03) than reported in some previous studies (α ≃ -1.7), and demonstrate that this new measurement is robust. By z ≃ 4, the faint-end slope has steepened slightly, to α = -1.43 ± 0.04, and we show that these measurements are consistent with the overall evolutionary trend from z = 0 to 8. Finally, we find that while characteristic number density (φ*) drops from z ≃ 2 to z ≃ 4, characteristic luminosity (M*) brightens by ≃ 1 mag. This, combined with the new flatter faint-end slopes, has the consequence that UV luminosity density (and hence unobscured star formation density) peaks at z ≃ 2.5-3, when the Universe was ≃ 2.5 Gyr old.
NASA Astrophysics Data System (ADS)
van der Burg, Remco F. J.; Hoekstra, Henk; Muzzin, Adam; Sifón, Cristóbal; Viola, Massimo; Bremer, Malcolm N.; Brough, Sarah; Driver, Simon P.; Erben, Thomas; Heymans, Catherine; Hildebrandt, Hendrik; Holwerda, Benne W.; Klaes, Dominik; Kuijken, Konrad; McGee, Sean; Nakajima, Reiko; Napolitano, Nicola; Norberg, Peder; Taylor, Edward N.; Valentijn, Edwin
2017-11-01
In recent years, many studies have reported substantial populations of large galaxies with low surface brightness in local galaxy clusters. Various theories that aim to explain the presence of such ultra-diffuse galaxies (UDGs) have since been proposed. A key question that will help to distinguish between models is whether UDGs have counterparts in host haloes with lower masses, and if so, what their abundance as a function of halo mass is. We here extend our previous study of UDGs in galaxy clusters to galaxy groups. We measure the abundance of UDGs in 325 spectroscopically selected groups from the Galaxy And Mass Assembly (GAMA) survey. We make use of the overlapping imaging from the ESO Kilo-Degree Survey (KiDS), from which we can identify galaxies with mean surface brightnesses within their effective radii down to 25.5 mag arcsec-2 in the r band. We are able to measure a significant overdensity of UDGs (with sizes reff ≥ 1.5 kpc) in galaxy groups down to M200 = 1012 M⊙, a regime where approximately only one in ten groups contains a UDG that we can detect. We combine measurements of the abundance of UDGs in haloes that cover three orders of magnitude in halo mass, finding that their numbers scale quite steeply with halo mass: NUDG(R < R200) ∝ M2001.11±0.07. To better interpret this, we also measure the mass-richness relation for brighter galaxies down to Mr* + 2.5 in the same GAMA groups, and find a much shallower relation of NBright(R < R200) ∝ M2000.78±0.05. This shows that compared to bright galaxies, UDGs are relatively more abundant in massive clusters than in groups. We discuss the implications, but it is still unclear whether this difference is related to a higher destruction rate of UDGs in groups or if massive haloes have a positive effect on UDG formation.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Vulcani, Benedetta; Marchesini, Danilo; De Lucia, Gabriella
2016-01-10
The growth of galaxies is a key problem in understanding the structure and evolution of the universe. Galaxies grow their stellar mass by a combination of star formation and mergers, with a relative importance that is redshift dependent. Theoretical models predict quantitatively different contributions from the two channels; measuring these from the data is a crucial constraint. Exploiting the UltraVISTA catalog and a unique sample of progenitors of local ultra-massive galaxies selected with an abundance matching approach, we quantify the role of the two mechanisms from z = 2 to 0. We also compare our results to two independent incarnations of semi-analyticmore » models. At all redshifts, progenitors are found in a variety of environments, ranging from being isolated to having 5–10 companions with mass ratio at least 1:10 within a projected radius of 500 kpc. In models, progenitors have a systematically larger number of companions, entailing a larger mass growth for mergers than in observations, at all redshifts. Generally, in both observations and models, the inferred and the expected mass growth roughly agree, within the uncertainties. Overall, our analysis confirms the model predictions, showing how the growth history of massive galaxies is dominated by in situ star formation at z ∼ 2, both star formation and mergers at 1 < z < 2, and by mergers alone at z < 1. Nonetheless, detailed comparisons still point out tensions between the expected mass growth and our results, which might be due to either an incorrect progenitors-descendants selection, uncertainties on star-formation rate and mass estimates, or the adopted assumptions on merger rates.« less
Gap Junctions and Connexin Hemichannels Underpin Haemostasis and Thrombosis
Vaiyapuri, Sakthivel; Jones, Chris I.; Sasikumar, Parvathy; Moraes, Leonardo A.; Munger, Stephanie J.; Wright, Joy R.; Ali, Marfoua S.; Sage, Tanya; Kaiser, William J.; Tucker, Katherine L.; Stain, Christopher J.; Bye, Alexander P.; Jones, Sarah; Oviedo-Orta, Ernesto; Simon, Alexander M.; Mahaut-Smith, Martyn P.; Gibbins, Jonathan M.
2012-01-01
Background Connexins are a widespread family of membrane proteins that assemble into hexameric hemichannels, also known as connexons. Connexons regulate membrane permeability in individual cells or couple between adjacent cells to form gap junctions and thereby provide a pathway for regulated intercellular communication. We have now examined the role of connexins in platelets, blood cells that circulate in isolation, but upon tissue injury adhere to each other and the vessel wall to prevent blood loss and facilitate wound repair. Methods and Results We report the presence of connexins in platelets, notably connexin37, and that the formation of gap junctions within platelet thrombi is required for the control of clot retraction. Inhibition of connexin function modulated a range of platelet functional responses prior to platelet-platelet contact, and reduced laser induced thrombosis in vivo in mice. Deletion of the Cx37 gene (Gja4) in transgenic mice reduced platelet aggregation, fibrinogen binding, granule secretion and clot retraction indicating an important role for Cx37 hemichannels and gap junctions in platelet thrombus function. Conclusions Together, these data demonstrate that platelet gap junctions and hemichannels underpin the control of haemostasis and thrombosis and represent potential therapeutic targets. PMID:22528526
Klinke, David J.; Horvath, Nicholas; Cuppett, Vanessa; Wu, Yueting; Deng, Wentao; Kanj, Rania
2015-01-01
The integrity of epithelial tissue architecture is maintained through adherens junctions that are created through extracellular homotypic protein–protein interactions between cadherin molecules. Cadherins also provide an intracellular scaffold for the formation of a multiprotein complex that contains signaling proteins, including β-catenin. Environmental factors and controlled tissue reorganization disrupt adherens junctions by cleaving the extracellular binding domain and initiating a series of transcriptional events that aim to restore tissue homeostasis. However, it remains unclear how alterations in cell adhesion coordinate transcriptional events, including those mediated by β-catenin in this pathway. Here were used quantitative single-cell and population-level in vitro assays to quantify the endogenous pathway dynamics after the proteolytic disruption of the adherens junctions. Using prior knowledge of isolated elements of the overall network, we interpreted these data using in silico model-based inference to identify the topology of the regulatory network. Collectively the data suggest that the regulatory network contains interlocked network motifs consisting of a positive feedback loop, which is used to restore the integrity of adherens junctions, and a negative feedback loop, which is used to limit β-catenin–induced gene expression. PMID:26224311
Serhan, Fatima; Penaud, Magalie; Petit, Caroline; Leste-Lasserre, Thierry; Trajcevski, Stéphane; Klatzmann, David; Duisit, Ghislaine; Sonigo, Pierre; Moullier, Philippe
2004-06-01
We showed that a U5-U3 junction was reproducibly detected by a PCR assay as early as 1 to 2 h postinfection with a DNase-treated murine leukemia virus (MLV)-containing supernatant in aphidicolin-arrested NIH 3T3 cells, as well as in nonarrested cells. Such detection is azidothymidine sensitive and corresponded to neosynthesized products of the reverse transcriptase. This observation was confirmed in two additional human cell lines, TE671 and ARPE-19. Using cell fractionation combined with careful controls, we found that a two-long-terminal-repeat (two-LTR) junction molecule was detectable in the cytoplasm as early as 2 h post virus entry. Altogether, our data indicated that the neosynthesized retroviral DNA led to the early formation of structures including true two-LTR junctions in the cytoplasm of MLV-infected cells. Thus, the classical assumption that two-LTR circles are a mitosis-dependent dead-end product accumulating in the nucleus must be reconsidered. MLV-derived products containing a two-LTR junction can no longer be used as an exclusive surrogate for the preintegration complex nuclear translocation event.
NASA Astrophysics Data System (ADS)
Guo, Chuan; Chen, Daizhao; Song, Yafang; Zhou, Xiqiang; Ding, Yi; Zhang, Gongjing
2018-06-01
During the Early Ordovician, the Tarim Basin (NW China) was mainly occupied by an extensive shallow-water carbonate platform, on which a carbonate ramp system was developed in the Bachu-Keping area of the western part of the basin. Three well-exposed typical outcrop sections of the Lower Ordovician Penglaiba Formation were investigated in order to identify the depositional facies and to clarify origins of meter-scale cycles and depositional sequences, thereby the platform evolution. Thirteen lithofacies are identified and further grouped into three depositional facies (associations): peritidal, restricted and open-marine subtidal facies. These lithofacies are vertically stacked into meter-scale, shallowing-upward peritidal and subtidal cycles. The peritidal cycles are mainly distributed in the lower and uppermost parts of the Penglaiba Formation deposited in the inner-middle ramp, and commonly start with shallow subtidal to intertidal facies followed by inter- to supratidal facies. In contrast, the subtidal cycles occur throughout the formation mostly in the middle-outer ramp and are dominated by shallow to relatively deep (i.e., intermediate) subtidal facies. The dominance of asymmetrical and incomplete cycles suggests a dominant control of Earth's orbital forcing on the cyclic deposition on the platform. On the basis of vertical facies and cycle stacking patterns, and accommodation changes illustrated by the Fischer plots from all studied sections, five third-order depositional sequences are recognized in the Penglaiba Formation. Individual sequences comprise a lower transgressive part and an upper regressive one. In shallow-water depositional environments, the transgressive packages are dominated by thicker-than-average subtidal cycles, indicating an increase in accommodation space, whereas regressive parts are mainly represented by thinner-than-average peritidal and subtidal cycles, denoting a decrease in accommodation space. In contrast, in intermediate to deep subtidal environments, transgressive and regressive packages display an opposite trend in accommodation space changes. Sequence boundaries (except the basal and top boundaries of the Penglaiba Formation) are usually represented by laterally traceable, transitional boundary zones without apparent subaerial exposure features. Good correlation of the long-term changes in accommodation space (or sea-level) inferred from vertical stacking patterns of facies and cycles suggests an overriding eustatic control on the formation of meter-scale cycles and third-order depositional sequences as well as platform evolution superimposed with local and/or regional tectonic influence during the Early Ordovician. This study would help understand the controls on the tempo-spatial facies distribution, stratal cyclicity and carbonate platform evolution in the western Tarim Basin during the Early Ordovician, facilitating prediction for favorable subsurface carbonate reservoirs and future hydrocarbon exploration and production in the Penglaiba Formation.
A study of electric field components in shallow water and water half-space models in seabed logging
NASA Astrophysics Data System (ADS)
Rostami, Amir; Soleimani, Hassan; Yahya, Noorhana; Nyamasvisva, Tadiwa Elisha; Rauf, Muhammad
2016-11-01
Seabed logging (SBL) is an electromagnetic (EM) method to detect hydrocarbon (HC) laid beneath the seafloor, which is a development of marine controlled source electromagnetic (CSEM) method. CSEM is a method to show resistivity log of geological layers, transmitting ultra-low frequency EM wave. In SBL a net of receivers, placed on the seafloor, detect reflected and refracted EM wave by layers with different resistivity. Contrast of electrical resistivity of layers impacts on amplitude and phase of the EM wave response. The most indispensable concern in SBL is to detect guided wave via high resistive layer under the seafloor that can be an HC reservoir. Guided wave by HC creates a remarkable difference in received signal when HC reservoir does not exist. While the major contribution of received EM wave in large offset, especially in shallow water environment, is airwave, which is refracted by sea surface due to extremely high resistivity of atmosphere, airwave can affect received guided wave, dramatically. Our objective for this work is to compare HC delineation of tangential and normal components of electric field in shallow water area, using finite element method simulation. Will be reported that, in shallow water environment, minor contribution of air wave in normal component of E field (Ey) versus its major contribution in the tangential component (Ex), causes a considerable contrast on HC delineation of Ey for deeply buried reservoirs (more than 3000 m), while Ex is unable to show different contrasts of received data for with and without HC media at the same condition.
Redox-mediated regulation of connexin proteins; focus on nitric oxide.
García, Isaac E; Sánchez, Helmuth A; Martínez, Agustín D; Retamal, Mauricio A
2018-01-01
Connexins are membrane proteins that form hemichannels and gap junction channels at the plasma membrane. Through these channels connexins participate in autocrine and paracrine intercellular communication. Connexin-based channels are tightly regulated by membrane potential, phosphorylation, pH, redox potential, and divalent cations, among others, and the imbalance of this regulation have been linked to many acquired and genetic diseases. Concerning the redox potential regulation, the nitric oxide (NO) has been described as a modulator of the hemichannels and gap junction channels properties. However, how NO regulates these channels is not well understood. In this mini-review, we summarize the current knowledge about the effects of redox potential focused in NO on the trafficking, formation and functional properties of hemichannels and gap junction channels. Copyright © 2017 Elsevier B.V. All rights reserved.
Semiconductor switch geometry with electric field shaping
Booth, R.; Pocha, M.D.
1994-08-23
An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.
Semiconductor switch geometry with electric field shaping
Booth, Rex; Pocha, Michael D.
1994-01-01
An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.
Preventing Proximal Adjacent Level Kyphosis With Strap Stabilization.
Zaghloul, Khaled M; Matoian, Brett J; Denardin, Nicholas B; Patel, Vikas V
2016-07-01
A substantial proportion of patients develop proximal junctional kyphosis following spinal surgery. To combat this postoperative change, several techniques have focused on maintaining the structural integrity of adjacent spinal levels and adapting the proximal end of the fusion construct to accommodate the increased mechanical stressors produced by long spinal fusion. The use of Mersilene tape (Ethicon, Somerville, New Jersey) for spine and orthopedic surgery is well documented, although considerably less is known about its use for preventing proximal junctional kyphosis. This article describes a proposed technique using Mersilene tape to provide a check-rein strap stabilization at the proximal end of fusion constructs. Initial data suggest that use of this technique may prevent formation of proximal junctional kyphosis. [Orthopedics. 2016; 39(4):e794-e799.]. Copyright 2016, SLACK Incorporated.
NASA Astrophysics Data System (ADS)
Tahir, Abdul Fattah Mohd; Aqida, Syarifah Nur
2017-07-01
In hot press forming, changes of mechanical properties in boron steel blanks have been a setback in trimming the final shape components. This paper presents investigation of kerf width and heat affected zone (HAZ) of ultra high strength 22MnB5 steel cutting. Sample cutting was conducted using a 4 kW Carbon Dioxide (CO2) laser machine with 10.6 μm wavelength with the laser spot size of 0.2 mm. A response surface methodology (RSM) using three level Box-Behnken design of experiment was developed with three factors of peak power, cutting speed and duty cycle. The parameters were optimised for minimum kerf width and HAZ formation. Optical evaluation using MITUTOYO TM 505 were conducted to measure the kerf width and HAZ region. From the findings, laser duty cycle was crucial to determine cutting quality of ultra-high strength steel; followed by cutting speed and laser power. Meanwhile, low power intensity with continuous wave contributes the narrowest kerf width formation and least HAZ region.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pereira, Flavia E.; Coffin, J. Douglas; Beall, Howard D.
2007-04-15
Arsenic exposure has been shown to exacerbate atherosclerosis, beginning with activation of the endothelium that lines the vessel wall. Endothelial barrier integrity is maintained by proteins of the adherens junction (AJ) such as vascular endothelial cadherin (VE-cadherin) and {beta}-catenin and their association with the actin cytoskeleton. In the present study, human aortic endothelial cells (HAECs) were exposed to 1, 5 and 10 {mu}M sodium arsenite [As(III)] for 1, 6, 12 and 24 h, and the effects on endothelial barrier integrity were determined. Immunofluorescence studies revealed formation of actin stress fibers and non-uniform VE-cadherin and {beta}-catenin staining at cell-cell junctions thatmore » were concentration- and time-dependent. Intercellular gaps were observed with a measured increase in endothelial permeability. In addition, concentration-dependent increases in tyrosine phosphorylation (PY) of {beta}-catenin and activation of protein kinase C{alpha} (PKC{alpha}) were observed. Inhibition of PKC{alpha} restored VE-cadherin and {beta}-catenin staining at cell-cell junctions and abolished the As(III)-induced formation of actin stress fibers and intercellular gaps. Endothelial permeability and PY of {beta}-catenin were also reduced to basal levels. These results demonstrate that As(III) induces activation of PKC{alpha}, which leads to increased PY of {beta}-catenin downstream of PKC{alpha} activation. Phosphorylation of {beta}-catenin plausibly severs the association of VE-cadherin and {beta}-catenin, which along with formation of actin stress fibers, results in intercellular gap formation and increased endothelial permeability. To the best of our knowledge, this is the first report demonstrating that As(III) causes a loss of endothelial monolayer integrity, which potentially could contribute to the development of atherosclerosis.« less