Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector

NASA Technical Reports Server (NTRS)

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Luong, E.; Hong, W.; Mumolo, J.; Bae, Y.; Stillman, G. E.; Jackson, S. L.;

An ultra-thin compact polarization-independent hexa-band metamaterial absorber

NASA Astrophysics Data System (ADS)

Munaga, Praneeth; Bhattacharyya, Somak; Ghosh, Saptarshi; Srivastava, Kumar Vaibhav

2018-04-01

In this paper, an ultra-thin compact hexa-band metamaterial absorber has been presented using single layer of dielectric. The proposed design is polarization independent in nature owing to its fourfold symmetry and exhibits high angular stability up to 60° angles of incidences for both TE and TM polarizations. The structure is ultrathin in nature with 2 mm thickness, which corresponds to λ/11.4 ( λ is the operating wavelength with respect to the highest frequency of absorption). Six distinct absorption frequencies are obtained from the design, which can be distributed among three regions, namely lower band, middle band and higher band; each region consists of two closely spaced frequencies. Thereafter, the dimensions of the proposed structure are adjusted in such a way that bandwidth enhancement occurs at each region separately. Simultaneous bandwidth enhancements at middle and higher bands have also been achieved by proper optimization of the geometrical parameters. The structure with simultaneous bandwidth enhancements at X- and Ku-bands is later fabricated and the experimental absorptivity response is in agreement with the simulated one.

RF-MEMS tunable interdigitated capacitor and fixed spiral inductor for band pass filter applications

NASA Astrophysics Data System (ADS)

Bade, Ladon Ahmed; Dennis, John Ojur; Khir, M. Haris Md; Wen, Wong Peng

2016-11-01

This research presents the tunable Radio Frequency Micro Electromechanical Systems (RF-MEMS) coupled band-pass filter (BPF), which possess a wide tuning range and constructed by using the Chebyshev fourth degree equivalent circuit consisting of fixed inductors and interdigitated tunable capacitors. The suggested method was authenticated by designing a new tunable BPF with a 100% tuning range from 3.1 GHz to 4.9 GHz. The Metal Multi-User MEMS Process (Metal MUMPs) was involved in the process of design of this band-pass filter. It aimed to achieve the reconfiguration of frequencies and show high efficiency of RF in the applications that using Ultra Wide Band (UWB) such as wireless sensor networks. The RF performance of this filter was found to be very satisfactory due to its simple fabrication. Moreover, it showed less insertion loss of around 4 dB and high return loss of around 20 dB.

Ultra-wide bandpass filter based on long-period fiber gratings and the evanescent field coupling between two fibers.

PubMed

Kim, Myoung Jin; Jung, Yong Min; Kim, Bok Hyeon; Han, Won-Taek; Lee, Byeong Ha

2007-08-20

We demonstrate a fiber-based bandpass filter with an ultra-wide spectral bandwidth. The ultra-wide band feature is achieved by inscribing a long-period fiber grating (LPG) in a specially-designed low index core single mode fiber. To get the bandpass function, the evanescent field coupling between two attached fibers is utilized. By applying strain, the spectral shape of the pass-band is adjusted to flat-top and Gaussian shapes. For the flat-top case, the bandwidth is obtained ~ 160 nm with an insertion loss of ~ 2 dB. With strain, the spectral shape is switched into a Gaussian one, which has ~ 120 nm FWHM and ~ 4.18 dB insertion loss at the peak.

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

An intelligent subsurface buoy design for measuring ocean ambient noise

NASA Astrophysics Data System (ADS)

Li, Bing; Wang, Lei

2012-11-01

A type of ultra-low power subsurface buoy system is designed to measure and record ocean ambient noise data. The buoy utilizes a vector hydrophone (pass band 20Hz-1.2kHz) and a 6-element vertical hydrophone array (pass band 20Hz-2kHz) to measure ocean ambient noise. The acoustic signals are passed through an automatically modified gain, a band pass filter, and an analog-to-digital (A/D) conversion module. They are then stored in high-capacity flash memory. In order to identify the direction of noise source, the vector sensor measuring system has integrated an electric-magnetic compass. The system provides a low-rate underwater acoustic communication system which is used to report the buoy state information and a high-speed USB interface which is used to retrieve the recorded data on deck. The whole system weighs about 125kg and can operate autonomously for more than 72 hours. The system's main architecture and the sea-trial test results are provided in this paper.

An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

PubMed

Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

2016-06-02

NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.

Experimental Tests of UltraFlex Array Designs in Low Earth Orbital and Geosynchronous Charging Environments

NASA Technical Reports Server (NTRS)

Galofaro, Joel T.; Vayner, Boris V.; Hillard, Grover B.

2011-01-01

The present ground based investigations give the first definitive look describing the expected on-orbit charging behavior of Orion UltraFlex array coupons in the Low Earth Orbital and Geosynchronous Environments. Furthermore, it is important to note that the LEO charging environment also applies to the International Space Station as well as to the lunar mission charging environments. The GEO charging environment includes the bounding case for all lunar orbital and lunar surface mission environments. The UltraFlex thin film photovoltaic array technology has been targeted to become the sole power system for life support and on-orbit power for the manned Aires Crew Exploration Vehicle. It is therefore, crucial to gain an understanding of the complex charging behavior to answer some of the basic performance and survivability issues in an attempt to ascertain that a single UltraFlex array design will be able to cope with the projected worst case LEO and GEO charging environments. Testing was limited to four array coupons, two coupons each from two different array manufactures, Emcore and Spectrolab. The layout of each array design is identical and varies only in the actual cell technology used. The individual array cells from each manufacturer have an antireflection layered coating and come in two different varieties either uncoated (only AR coating) or coated with a thin conducting ITO layer. The LEO Plasma tests revealed that all four coupons passed the arc threshold -120 V bias tests. GEO electron gun charging tests revealed that only front side area of ITO coated coupons passed tests. Only the Emcore AR array passed backside Stage 2 GEO Tests.

Ultra-wideband ladder filter using SH(0) plate wave in thin LiNbO(3) plate and its application to tunable filter.

PubMed

Kadota, Michio; Tanaka, Shuji

2015-05-01

A cognitive radio terminal using vacant frequency bands of digital TV (DTV) channels, i.e., TV white space, strongly requires a compact tunable filter covering a wide frequency range of the DTV band (470 to 710 MHz in Japan). In this study, a T-type ladder filter using ultra-wideband shear horizontal mode plate wave resonators was fabricated, and a low peak insertion loss of 0.8 dB and an ultra-large 6 dB bandwidth of 240 MHz (41%) were measured in the DTV band. In addition, bandpass filters with different center frequencies of 502 and 653 MHz at 6 dB attenuation were numerically synthesized based on the same T-type ladder filter in conjunction with band rejection filters with different frequencies. The results suggest that the combination of the wideband T-type ladder filter and the band rejection filters connected with variable capacitors enables a tunable filter with large tunability of frequency and bandwidth as well as large rejection at the adjacent channels of an available TV white space.

Organic Electronic Devices Using Crosslinked Polyelectrolyte Multilayers as an Ultra-Thin Dielectric Material

DTIC Science & Technology

2006-09-01

energy band diagram illustrating the allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized ...allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized electron energy states, or traps, that...been observed with the formation of alternating bond lengths along the backbone.43 The localization of the π-electrons while forming the shorter double

Design of dual ring wavelength filters for WDM applications

NASA Astrophysics Data System (ADS)

Sathyadevaki, R.; Shanmuga sundar, D.; Sivanantha Raja, A.

2016-12-01

Wavelength division multiplexing plays a prime role in an optical communication due to its advantages such as easy network expansion, longer span lengths etc. In this work, photonic crystal based filters with the dual rings are proposed which act as band pass filters (BPF) and channel drop filter (CDF) that has found a massive applications in C and L-bands used for wavelength selection and noise filtering at erbium doped fiber amplifiers and dense wavelength division multiplexing operation. These filters are formulated on the square lattice with crystal rods of silicon material of refractive index 3.4 which are perforated on an air of refractive index 1. Dual ring double filters (band pass filter and channel drop filter) on single layout possess passing and dropping band of wavelengths in two distinct arrangements with entire band quality factors of 92.09523 & 505.263 and 124.85019 & 456.8633 for the pass and drop filters of initial setup and amended setup respectively. These filters have the high-quality factor with broad and narrow bandwidths of 16.8 nm & 3.04 nm and 12.85 nm & 3.3927 nm. Transmission spectra and band gap of the desired filters is analyzed using Optiwave software suite. Two dual ring filters incorporated on a single layout comprises the size of 15×11 μm which can also be used in the integrated photonic chips for the ultra-compact unification of devices.

Bandwidth-variable tunable optical filter unit for illumination and spectral imaging systems using thin-film optical band-pass filters.

PubMed

Hennig, Georg; Brittenham, Gary M; Sroka, Ronald; Kniebühler, Gesa; Vogeser, Michael; Stepp, Herbert

2013-04-01

An optical filter unit is demonstrated, which uses two successively arranged tunable thin-film optical band-pass filters and allows for simultaneous adjustment of the central wavelength in the spectral range 522-555 nm and of the spectral bandwidth in the range 3-16 nm with a wavelength switching time of 8 ms∕nm. Different spectral filter combinations can cover the complete visible spectral range. The transmitted intensity was found to decrease only linearly with the spectral bandwidth for bandwidths >6 nm, allowing a high maximum transmission efficiency of >75%. The image of a fiber bundle was spectrally filtered and analyzed in terms of position-dependency of the transmitted bandwidth and central wavelength.

Design of an ultra-thin dual band infrared system

NASA Astrophysics Data System (ADS)

Du, Ke; Cheng, Xuemin; Lv, Qichao; Hu, YiFei

2014-11-01

The ultra-thin imaging system using reflective multiple-fold structure has smaller volume and less weight while maintaining high resolution compared with conventional optical systems. The multi-folded approach can significantly extend focal distance within wide spectral range without incurring chromatic aberrations. In this paper, we present a dual infrared imaging system of four-folded reflection with two air-spaced concentric reflective surfaces. The dual brand IR system has 107mm effective focal length, 0.7NA, +/-4° FOV, and 50mm effective aperture with 80mm outer diameter into a 25mm total thickness, which spectral response is 3~12μm.

Ultra narrow flat-top filter based on multiple equivalent phase shifts

NASA Astrophysics Data System (ADS)

Wang, Fei; Zou, Xihua; Yin, Zuowei; Chen, Xiangfei; Shen, Haisong

2008-11-01

Instead of real phase shifts, equivalent phase shifts (EPS) are adopted to construct ultra narrow phase-shifted band-pass filer in sampled Bragg gratings (SBG). Two optimized distributions of multiple equivalent phase shifts, using 2 and 5 EPSs respectively, are given in this paper to realize flat-top and ripple-free transmission characteristics simultaneously. Also two demonstrations with 5 EPSs both on hydrogen-loaded and photosensitive fibers are presented and their spectrums are examined by an optical vector analyzer (OVA). Given only ordinary phase mask and sub-micrometer precision control, ultra-narrowband flat-top filters with expected performance can be achieved flexibly and cost-effectively.

CO2 laser cutting of ultra thin (75 μm) glass based rigid optical solar reflector (OSR) for spacecraft application

NASA Astrophysics Data System (ADS)

Mishra, Shubham; Sridhara, N.; Mitra, Avijit; Yougandar, B.; Dash, Sarat Kumar; Agarwal, Sanjay; Dey, Arjun

2017-03-01

Present study reports for the first time laser cutting of multilayered coatings on both side of ultra thin (i.e., 75 μm) glass substrate based rigid optical solar reflector (OSR) for spacecraft thermal control application. The optimization of cutting parameters was carried out as a function of laser power, cutting speed and number of cutting passes and their effect on cutting edge quality. Systematic and in-detail microstructural characterizations were carried out by optical and scanning electron microscopy techniques to study the laser affected zone and cutting edge quality. Sheet resistance and water contact angle experiments were also conducted locally both prior and after laser cut to investigate the changes of electrical and surface properties, if any.

Ultra-thin high-efficiency mid-infrared transmissive Huygens meta-optics.

PubMed

Zhang, Li; Ding, Jun; Zheng, Hanyu; An, Sensong; Lin, Hongtao; Zheng, Bowen; Du, Qingyang; Yin, Gufan; Michon, Jerome; Zhang, Yifei; Fang, Zhuoran; Shalaginov, Mikhail Y; Deng, Longjiang; Gu, Tian; Zhang, Hualiang; Hu, Juejun

2018-04-16

The mid-infrared (mid-IR) is a strategically important band for numerous applications ranging from night vision to biochemical sensing. Here we theoretically analyzed and experimentally realized a Huygens metasurface platform capable of fulfilling a diverse cross-section of optical functions in the mid-IR. The meta-optical elements were constructed using high-index chalcogenide films deposited on fluoride substrates: the choices of wide-band transparent materials allow the design to be scaled across a broad infrared spectrum. Capitalizing on a two-component Huygens' meta-atom design, the meta-optical devices feature an ultra-thin profile (λ 0 /8 in thickness) and measured optical efficiencies up to 75% in transmissive mode for linearly polarized light, representing major improvements over state-of-the-art. We have also demonstrated mid-IR transmissive meta-lenses with diffraction-limited focusing and imaging performance. The projected size, weight and power advantages, coupled with the manufacturing scalability leveraging standard microfabrication technologies, make the Huygens meta-optical devices promising for next-generation mid-IR system applications.

Ultra-compact UHF Band-pass Filter Designed by Archimedes Spiral Capacitor and Shorted-loaded Stubs

NASA Astrophysics Data System (ADS)

Peng, Lin; Jiang, Xing

2015-01-01

UHF microstrip band-pass filters (BPFs) that much smaller than the referred BPFs are proposed in this communication. For the designing purpose of compactness, archimedes spiral capacitor and ground-loaded stubs are utilized to enhance capacitances and inductance of a filter. Two compact BPFs denoted as BPF 1 and BPF 2 are designed by applying these techniques. The size of BPF 1 and BPF 2 are 0.062 λg × 0.056 λg and 0.047 λg × 0.043 λg, respectively, where λg are guided wavelengths of the centre frequencies of the corresponding filters. The proposed filters were constructed and measured, and the measured results are in good agreement with the simulated ones.

Band-pass filters based on photonic crystal

NASA Astrophysics Data System (ADS)

Khodenkov, S. A.; Yushkov, I. A.

2017-11-01

Multilayer photonic crystal structures with bleaching layers are being investigated. In order to calculate the characteristics of ultra-wideband filters on their basis, T-lines lossless model was used. Amplitude-frequency characteristics for the synthesized filters of 5th, 11th and 17th orders are given. It is proved that by a significant increase in filter N order, the difference between the connection coefficients of central resonators’ layers’ becomes negligible. This makes it possible to develop 27-order filter, in which almost half of the layers are realized by periodic interchange of only two identical high-contrast materials. The investigated band-pass filters, including the ones on a glass substrate, have high frequency-selective properties at a relative bandwidth of 80%.

Band gap tuning of epitaxial SrTiO{sub 3-δ}/Si(001) thin films through strain engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cottier, Ryan J.; Steinle, Nathan A.; Currie, Daniel A.

2015-11-30

We investigate the effect of strain and oxygen vacancies (V{sub O}) on the crystal and optical properties of oxygen deficient, ultra-thin (4–30 nm) films of SrTiO{sub 3-δ} (STO) grown heteroepitaxially on p-Si(001) substrates by molecular beam epitaxy. We demonstrate that STO band gap tuning can be achieved through strain engineering and show that the energy shift of the direct energy gap transition of SrTiO{sub 3-δ}/Si films has a quantifiable dimensional and doping dependence that correlates well with the changes in crystal structure.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Middey, S.; Rivero, P.; Meyers, D.

2014-10-29

In this study, we address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO 3 on the band insulator SrTiO 3 along the pseudo cubic [111] direction. While in general the metallic LaNiO 3 film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, andmore » synchrotron based resonant X-ray spectroscopy reveal the formation of a chemical phase La 2Ni 2O 5 (Ni 2+) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO 3/SrTiO 3 interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.« less

Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Awari, N.; University of Groningen, 9747 AG Groningen; Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie

2016-07-18

Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices.

PubMed

Wang, Wenyan; Hao, Yuying; Cui, Yanxia; Tian, Ximin; Zhang, Ye; Wang, Hua; Shi, Fang; Wei, Bin; Huang, Wei

2014-03-10

Metal nanogratings as one of the promising architectures for effective light trapping in organic photovoltaics (OPVs) have been actively studied over the past decade. Here we designed a novel metal nanowall grating with ultra-small period and ultra-high aspect-ratio as the back electrode of the OPV device. Such grating results in the strong hot spot effect in-between the neighboring nanowalls and the localized surface plasmon effect at the corners of nanowalls. These combined effects make the integrated absorption efficiency of light over the wavelength range from 400 to 650 nm in the active layer for the proposed structure, with respect to the equivalent planar structure, increases by 102% at TM polarization and by 36.5% at the TM/TE hybrid polarization, respectively. Moreover, it is noted that the hot spot effect in the proposed structure is more effective for ultra-thin active layers, which is very favorable for the exciton dissociation and charge collection. Therefore such a nanowall grating is expected to improve the overall performance of OPV devices.

Colored ultra-thin hybrid photovoltaics with high quantum efficiency for decorative PV applications (Presentation Recording)

NASA Astrophysics Data System (ADS)

Guo, L. Jay

2015-10-01

This talk will describe an approach to create architecturally compatible and decorative thin-film-based hybrid photovoltaics [1]. Most current solar panels are fabricated via complex processes using expensive semiconductor materials, and they are rigid and heavy with a dull, black appearance. As a result of their non-aesthetic appearance and weight, they are primarily installed on rooftops to minimize their negative impact on building appearance. Recently we introduced dual-function solar cells based on ultra-thin dopant-free amorphous silicon embedded in an optical cavity that not only efficiently extract the photogenerated carriers but also display distinctive colors with the desired angle-insensitive appearances [1,2]. The angle-insensitive behavior is the result of an interesting phase cancellation effect in the optical cavity with respect to angle of light propagation [3]. In order to produce the desired optical effect, the semiconductor layer should be ultra-thin and the traditional doped layers need to be eliminated. We adopted the approach of employing charge transport/blocking layers used in organic solar cells to meet this demand. We showed that the ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell can transmit desired wavelength of light and that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges. This is because the a-Si layer thickness is smaller than the charge diffusion length, therefore the electron-hole recombination is strongly suppressed in such ultra-thin layer. Reflective colored PVs can be made in a similar fashion. Light-energy-harvesting colored signage was demonstrated. Furthermore, a cascaded photovoltaics scheme based on tunable spectrum splitting can be employed to increase power efficiency by absorbing a broader band of light energy. Our work provides a guideline for optimizing a photoactive layer thickness in high efficiency hybrid PV design, which can be adopted by other material systems as well. Based on these understandings, we have also developed colored perovskite PV by integrating an optical cavity with the perovskite semiconductors [4]. The principle and experimental results will be presented. 1. J. Y. Lee, K. T. Lee, S.Y. Seo, L. J. Guo, "Decorative power generating panels creating angle insensitive transmissive colors," Sci. Rep. 4, 4192, 2014. 2. K. T. Lee, J.Y. Lee, S.-Y. Seo, and L. J. Guo, "Colored ultra-thin hybrid photovoltaics with high quantum efficiency," Light: Science and Applications, 3, e215, 2014. 3. K. T. Lee, S.-Y. Seo, J.Y. Lee, and L. J. Guo, "Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters," Appl. Phys. Lett. 104, 231112, (2014); and "Strong resonance effect in a lossy medium-based optical cavity for angle robust spectrum filters," Adv. Mater, 26, 6324-6328, 2014. 4. K. T. Lee, M. Fukuda, L. J. Guo, "Colored, see-through perovskite solar cells employing an optical cavity," Submitted, 2015

Development of thin-film tunable band-pass filters based hyper-spectral imaging system applied for both surface enhanced Raman scattering and plasmon resonance Rayleigh scattering

NASA Astrophysics Data System (ADS)

Iga, Mitsuhiro; Kakuryu, Nobuyuki; Tanaami, Takeo; Sajiki, Jiro; Isozaki, Katsumi; Itoh, Tamitake

2012-10-01

We describe the development of a hyper-spectral imaging (HSI) system composed of thin-film tunable band-pass filters (TF-TBPFs) and its application to inhomogeneous sample surfaces. Compared with existing HSI systems, the system has a simpler optical arrangement and has an optical transmittance of up to 80% owing to polarization independence. The HSI system exhibits a constant spectral resolution over a spectral window of 80 nm (530 to 610 nm) and tunable spectral resolution from 1.5 to 3.0 nm, and requires only 5.4 s per measurement. Plasmon resonance and surface enhanced Raman scattering (SERS) from inhomogeneous surfaces dispersed with Ag nanoparticles (NP) have been measured with the HSI system. The measurement of multiple Ag NPs is consistent with conventional isolated NP measurements as explained by the electromagnetic mechanism of SERS, demonstrating the validity of the HSI system.

Simulative research on generating UWB signals by all-optical BPF

NASA Astrophysics Data System (ADS)

Yang, Chunyong; Hou, Rui; Chen, Shaoping

2007-11-01

The simulating technique is used to investigate generating and distributing Ultra-Wide-Band signals depend on fiber transmission. Numerical result for the system about the frequency response shows that the characteristics of band-pass filter is presented, and the shorter the wavelength is, the bandwidth of lower frequency is wider. Transmission performance simulation for 12.5Gb/s psudo-random sequence also shows that Gaussian pulse signal after transported in fiber is similar to UWB wave pattern mask of FCC in time domain and frequency spectrum specification of FCC in frequency domain .

Polarization-maintaining reflection-mode THz time-domain spectroscopy of a polyimide based ultra-thin narrow-band metamaterial absorber.

PubMed

Astorino, Maria Denise; Fastampa, Renato; Frezza, Fabrizio; Maiolo, Luca; Marrani, Marco; Missori, Mauro; Muzi, Marco; Tedeschi, Nicola; Veroli, Andrea

2018-01-31

This paper reports the design, the microfabrication and the experimental characterization of an ultra-thin narrow-band metamaterial absorber at terahertz frequencies. The metamaterial device is composed of a highly flexible polyimide spacer included between a top electric ring resonator with a four-fold rotational symmetry and a bottom ground plane that avoids misalignment problems. Its performance has been experimentally demonstrated by a custom polarization-maintaining reflection-mode terahertz time-domain spectroscopy system properly designed in order to reach a collimated configuration of the terahertz beam. The dependence of the spectral characteristics of this metamaterial absorber has been evaluated on the azimuthal angle under oblique incidence. The obtained absorbance levels are comprised between 67% and 74% at 1.092 THz and the polarization insensitivity has been verified in transverse electric polarization. This offers potential prospects in terahertz imaging, in terahertz stealth technology, in substance identification, and in non-planar applications. The proposed compact experimental set-up can be applied to investigate arbitrary polarization-sensitive terahertz devices under oblique incidence, allowing for a wide reproducibility of the measurements.

Stability of the tungsten diselenide and silicon carbide heterostructure against high energy proton exposure

NASA Astrophysics Data System (ADS)

Walker, Roger C.; Shi, Tan; Jariwala, Bhakti; Jovanovic, Igor; Robinson, Joshua A.

2017-10-01

Single layers of tungsten diselenide (WSe2) can be used to construct ultra-thin, high-performance electronics. Additionally, there has been considerable progress in controlled and direct growth of single layers on various substrates. Based on these results, high-quality WSe2-based devices that approach the limit of physical thickness are now possible. Such devices could be useful for space applications, but understanding how high-energy radiation impacts the properties of WSe2 and the WSe2/substrate interface has been lacking. In this work, we compare the stability against high energy proton radiation of WSe2 and silicon carbide (SiC) heterostructures generated by mechanical exfoliation of WSe2 flakes and by direct growth of WSe2 via metal-organic chemical vapor deposition (MOCVD). These two techniques produce WSe2/SiC heterostructures with distinct differences due to interface states generated during the MOCVD growth process. This difference carries over to differences in band alignment from interface states and the ultra-thin nature of the MOCVD-grown material. Both heterostructures are not susceptible to proton-induced charging up to a dose of 1016 protons/cm2, as measured via shifts in the binding energy of core shell electrons and a decrease in the valence band offset. Furthermore, the MOCVD-grown material is less affected by the proton exposure due to its ultra-thin nature and a greater interaction with the substrate. These combined effects show that the directly grown material is suitable for multi-year use in space, provided that high quality devices can be fabricated from it.

A Bio-Realistic Analog CMOS Cochlea Filter With High Tunability and Ultra-Steep Roll-Off.

PubMed

Wang, Shiwei; Koickal, Thomas Jacob; Hamilton, Alister; Cheung, Rebecca; Smith, Leslie S

2015-06-01

This paper presents the design and experimental results of a cochlea filter in analog very large scale integration (VLSI) which highly resembles physiologically measured response of the mammalian cochlea. The filter consists of three specialized sub-filter stages which respectively provide passive response in low frequencies, actively tunable response in mid-band frequencies and ultra-steep roll-off at transition frequencies from pass-band to stop-band. The sub-filters are implemented in balanced ladder topology using floating active inductors. Measured results from the fabricated chip show that wide range of mid-band tuning including gain tuning of over 20 dB, Q factor tuning from 2 to 19 as well as the bio-realistic center frequency shift are achieved by adjusting only one circuit parameter. Besides, the filter has an ultra-steep roll-off reaching over 300 dB/dec. By changing biasing currents, the filter can be configured to operate with center frequencies from 31 Hz to 8 kHz. The filter is 9th order, consumes 59.5 ∼ 90.0 μW power and occupies 0.9 mm2 chip area. A parallel bank of the proposed filter can be used as the front-end in hearing prosthesis devices, speech processors as well as other bio-inspired auditory systems owing to its bio-realistic behavior, low power consumption and small size.

Low cost and thin metasurface for ultra wide band and wide angle polarization insensitive radar cross section reduction

NASA Astrophysics Data System (ADS)

Ameri, Edris; Esmaeli, Seyed Hassan; Sedighy, Seyed Hassan

2018-05-01

A planar low cost and thin metasurface is proposed to achieve ultra-wideband radar cross section (RCS) reduction with stable performance with respect to polarization and incident angles. This metasurface is composed of two different artificial magnetic conductor unit cells arranged in a chessboard like configuration. These unit cells have a Jerusalem cross pattern with different thicknesses, which results in wideband out-phase reflection and RCS reduction, consequently. The designed metasurface reduces RCS more than 10-dB from 13.6 GHz to 45.5 GHz (108% bandwidth) and more than 20-dB RCS from 15.2 GHz to 43.6 GHz (96.6%). Moreover, the 10-dB RCS reduction bandwidth is very stable (more than 107%) for both TE and TM polarizations. The good agreement between simulations and measurement results proves the design, properly. The ultra-wide bandwidth, low cost, low profile, and stable performance of this metasurface prove its high capability compared with the state-of-the-art references.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters

PubMed Central

Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

2015-01-01

We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies. PMID:26552584

A Hybrid Circuit for Spoof Surface Plasmons and Spatial Waveguide Modes to Reach Controllable Band-Pass Filters.

PubMed

Zhang, Qian; Zhang, Hao Chi; Wu, Han; Cui, Tie Jun

2015-11-10

We propose a hybrid circuit for spoof surface plasmon polaritons (SPPs) and spatial waveguide modes to develop new microwave devices. The hybrid circuit includes a spoof SPP waveguide made of two anti-symmetric corrugated metallic strips and a traditional substrate integrated waveguide (SIW). From dispersion relations, we show that the electromagnetic waves only can propagate through the hybrid circuit when the operating frequency is less than the cut-off frequency of the SPP waveguide and greater than the cut-off frequency of SIW, generating efficient band-pass filters. We demonstrate that the pass band is controllable in a large range by designing the geometrical parameters of SPP waveguide and SIW. Full-wave simulations are provided to show the large adjustability of filters, including ultra wideband and narrowband filters. We fabricate a sample of the new hybrid device in the microwave frequencies, and measurement results have excellent agreements to numerical simulations, demonstrating excellent filtering characteristics such as low loss, high efficiency, and good square ratio. The proposed hybrid circuit gives important potential to accelerate the development of plasmonic integrated functional devices and circuits in both microwave and terahertz frequencies.

Multi-band filter design with less total film thickness for short-wave infrared

NASA Astrophysics Data System (ADS)

Yan, Yung-Jhe; Chien, I.-Pen; Chen, Po-Han; Chen, Sheng-Hui; Tsai, Yi-Chun; Ou-Yang, Mang

2017-08-01

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.

Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

NASA Astrophysics Data System (ADS)

Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

NASA Astrophysics Data System (ADS)

Giaccherini, Andrea; Russo, Francesca; Carlà, Francesco; Guerri, Annalisa; Picca, Rosaria Anna; Cioffi, Nicola; Cinotti, Serena; Montegrossi, Giordano; Passaponti, Maurizio; Di Benedetto, Francesco; Felici, Roberto; Innocenti, Massimo

2018-02-01

Electrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds CuxZnyS grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of CuxZnyS by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu2S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase.

Selective Pyroelectric Detection of Millimetre Waves Using Ultra-Thin Metasurface Absorbers

PubMed Central

Kuznetsov, Sergei A.; Paulish, Andrey G.; Navarro-Cía, Miguel; Arzhannikov, Andrey V.

2016-01-01

Sensing infrared radiation is done inexpensively with pyroelectric detectors that generate a temporary voltage when they are heated by the incident infrared radiation. Unfortunately the performance of these detectors deteriorates for longer wavelengths, leaving the detection of, for instance, millimetre-wave radiation to expensive approaches. We propose here a simple and effective method to enhance pyroelectric detection of the millimetre-wave radiation by combining a compact commercial infrared pyro-sensor with a metasurface-enabled ultra-thin absorber, which provides spectrally- and polarization-discriminated response and is 136 times thinner than the operating wavelength. It is demonstrated that, due to the small thickness and therefore the thermal capacity of the absorber, the detector keeps the high response speed and sensitivity to millimetre waves as the original infrared pyro-sensor does against the regime of infrared detection. An in-depth electromagnetic analysis of the ultra-thin resonant absorbers along with their complex characterization by a BWO-spectroscopy technique is presented. Built upon this initial study, integrated metasurface absorber pyroelectric sensors are implemented and tested experimentally, showing high sensitivity and very fast response to millimetre-wave radiation. The proposed approach paves the way for creating highly-efficient inexpensive compact sensors for spectro-polarimetric applications in the millimetre-wave and terahertz bands. PMID:26879250

Unpolarized resonance grating reflectors with 44% fractional bandwidth.

PubMed

Niraula, Manoj; Magnusson, Robert

2016-06-01

There is immense scientific interest in the properties of resonant thin films embroidered with periodic nanoscale features. This device class possesses considerable innovation potential. Accordingly, we report unpolarized broadband reflectors enabled by a serial arrangement of a pair of polarized subwavelength gratings. Optimized with numerical methods, our elemental gratings consist of a partially etched crystalline-silicon film on a quartz substrate. The resulting reflectors exhibit extremely wide spectral reflection bands in one polarization. By arranging two such reflectors sequentially with orthogonal periodicities, there results an unpolarized spectral band that exceeds those of the individual polarized bands. In the experiments reported herein, we achieve zero-order reflectance exceeding 97% under unpolarized light incidence over a 500 nm wide wavelength band. This wideband represents a ∼44% fractional band in the near infrared. Moreover, the resonant unpolarized broadband accommodates an ultra-high reflection band spanning ∼85  nm and exceeding 99.9% in efficiency. The elemental polarization-sensitive reflectors based on one-dimensional (1D) resonant gratings have a simple design and robust performance, and are straightforward to fabricate. Hence, this technology is a promising alternative to traditional multilayer thin-film reflectors, especially at longer wavelengths of light where multilayer deposition may be infeasible or impractical.

Low-Impedance Compact Modulators Capable of Generating Intense Ultra-fast Rising Nanosecond Waveforms

DTIC Science & Technology

2006-10-31

spark gap is shown in Fig. 1. The Blumleins were constructed from copper plates separated by laminated layered Kapton (polyimide) dielectrics. Scaling... convolution factor. The diamond/GaAs heterojunction response is limited to a very thin layer across the cross section between amorphic diamond and GaAs...were fastened to electrode mounts and passed through the cast material of the base before it hardened. A thick kapton laminate 1.2 cm wide separated

High-performance thin-layer chromatography analysis of steviol glycosides in Stevia formulations and sugar-free food products, and benchmarking with (ultra) high-performance liquid chromatography.

PubMed

Morlock, Gertrud E; Meyer, Stephanie; Zimmermann, Benno F; Roussel, Jean-Marc

2014-07-11

A high-performance TLC (HPTLC) method was newly developed and validated for analysis of 7 steviol glycosides in 6 different types of food and Stevia formulations. After a minimized one-step sample preparation, 21 samples were developed in parallel, allowing an effective food screening. Depending on the sample application volume, the method was suited to analyze food sample concentrations in the mg/kg range. LOQs of stevioside in natural yoghurt matrix spiked at 0.02, 0.13 and 0.2% were determined by the calibration curve method to be 12ng/band (peak height). ANOVA was successfully passed to prove data homogeneity in the working range (30-600ng/band). The accuracy (recovery tolerance limit, 92-120%), repeatability (3.1-5.4%) and intermediate precision (4.0-8.4%) were determined for stevioside in milk-based matrix including sample preparation and recovery rates at 3 different concentration levels. For the first time, the recording of HPTLC-ESI-MS spectra via the TLC-MS Interface was demonstrated for rebaudioside A. HPTLC contents for rebaudioside A were compared with results of two (U)HPLC methods. The running costs and analysis time of the three different methods were discussed in detail with regard to screening of food products. Copyright © 2014 Elsevier B.V. All rights reserved.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

PubMed

Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

2015-05-28

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

PubMed Central

Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

2015-01-01

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

Electrically Conductive Photopatternable Silver Paste for High-Frequency Ring Resonator and Band-Pass Filter

NASA Astrophysics Data System (ADS)

Umarji, Govind; Qureshi, Nilam; Gosavi, Suresh; Mulik, Uttam; Kulkarni, Atul; Kim, Taesung; Amalnerkar, Dinesh

2017-02-01

In conventional thick-film technology, there are often problems associated with poor edges, rough surfaces, and reproducibility due to process limitations, especially for high-frequency applications. These difficulties can be circumvented by using thin-film technology, but process cost and complexity remain major concerns. In this context, photopatternable thick-film technology can offer a viable alternative due to its Newtonian rheology, which can facilitate formation of the required sharp edges. We present herein a unique attempt to formulate a photopatternable silver paste with organic (photosensitive polymer) to inorganic (silver and glass) ratio of 30:70, developed in-house by us for fabrication of thick-film-based ring resonator and band-pass filter components. The ring resonator and band-pass component structures were realized by exposing screen-printed film to ultraviolet light at wavelength of 315 nm to 400 nm for 30 s to crosslink the photosensitive polymer. The pattern was subsequently developed using 1% sodium carbonate aqueous solution. For comparison, conventional silver and silver-palladium thick films were produced using in-house formulations. The surface topology and microstructural features were examined by stereomicroscopy and scanning electron microscopy. The smoothness and edge definition of the film were assessed by profilometry. The resistivity of the samples was observed and remained in the range from 3.4 μΩ cm to 3.6 μΩ cm. The electrical properties were compared by measuring the insertion loss characteristics. The results revealed that the ring resonator fabricated using the photopatternable silver paste exhibited better high-frequency properties compared with components based on conventional silver or silver-palladium paste, especially in terms of the resonant frequency of 10.1 GHz (versus 10 GHz designed) with bandwidth of 80 MHz. Additionally, the band-pass filter fabricated using the photopatternable silver paste displayed better center frequency ( f 0 = 10.588 GHz) and comparable ripple and attenuation bandwidth performance on par with Cu thin film.

Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C).

PubMed

Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

2015-02-06

Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001)

NASA Astrophysics Data System (ADS)

Lim, Z. H.; Ahmadi-Majlan, K.; Grimley, E. D.; Du, Y.; Bowden, M.; Moghadam, R.; LeBeau, J. M.; Chambers, S. A.; Ngai, J. H.

2017-08-01

We present structural and electrical characterization of SrZrO3 that has been epitaxially grown on Ge(001) by oxide molecular beam epitaxy. Single crystalline SrZrO3 can be nucleated on Ge via deposition at low temperatures followed by annealing at 550 °C in ultra-high vacuum. Photoemission spectroscopy measurements reveal that SrZrO3 exhibits a type-I band arrangement with respect to Ge, with conduction and valence band offsets of 1.4 eV and 3.66 eV, respectively. Capacitance-voltage and current-voltage measurements on 4 nm thick films reveal low leakage current densities and an unpinned Fermi level at the interface that allows modulation of the surface potential of Ge. Ultra-thin films of epitaxial SrZrO3 can thus be explored as a potential gate dielectric for Ge.

Nonlinear Bloch waves in metallic photonic band-gap filaments

NASA Astrophysics Data System (ADS)

Kaso, Artan; John, Sajeev

2007-11-01

We demonstrate the occurrence of nonlinear Bloch waves in metallic photonic crystals (PCs). These periodically structured filaments are characterized by an isolated optical pass band below an effective plasma gap. The pass band occurs in a frequency range where the metallic filament exhibits a negative, frequency-dependent dielectric function and absorption loss. The metallic losses are counterbalanced by gain in two models of inhomogeneously broadened nonlinear oscillators. In the first model, we consider close-packed quantum dots that fill the void regions of a two-dimensional (2D) metallic PC, and whose inhomogeneously broadened emission spectrum spans the original optical pass band of the bare filament. In the second model, we consider thin (10 50 nm) layers of inhomogeneously broadened two-level resonators, with large dipole oscillator strength, that cover the interior surfaces of 2D metallic (silver and tungsten) PCs. These may arise from localized surface plasmon resonances due to small metal particles or an otherwise rough metal surface. For simplicity, we treat electromagnetic modes with electric field perpendicular to the plane of metal periodicity. In both models, a pumping threshold of the resonators is found, above which periodic nonlinear solutions of Maxwell’s equations with purely real frequency within the optical pass band emerge. These nonlinear Bloch waves exhibit a laserlike input pumping to output amplitude characteristic. For strong surface resonances, these nonlinear waves may play a role in light emission from a hot tungsten (suitably microstructured) filament.

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Polymer nanofiber-carbon nanotube network generating circuits

NASA Astrophysics Data System (ADS)

Mutlu, Mustafa Umut; Akın, Osman; Yildiz, Ümit Hakan

2018-02-01

The polymer nanofiber carbon nanotube (CNT) based devices attracts attention since they promise high performance for next generation devices such as wearable electronics, ultra-light weighted appliances and foldable devices. This abstract describes the utilization of polymer nanofibers and CNT as major component of low cost foldable photo-resistor. We use polymer nanofiber as template guiding CNTs to generate nanocircuits and conductive sensing network. The controlled combination of CNTs and polymer nanofibers provide opportunities for device miniaturization without loss of performance. The nanofiber-CNT network based photo-resistor exhibits broad band response 400 to 1600 nm that holding promises for ultra-thin devices and new sensing platforms.

Metallic nano-structures for polarization-independent multi-spectral filters

NASA Astrophysics Data System (ADS)

Tang, Yongan; Vlahovic, Branislav; Brady, David Jones

2011-05-01

Cross-shaped-hole arrays (CSHAs) are selected for diminishing the polarization-dependent transmission differences of incident plane waves. We investigate the light transmission spectrum of the CSHAs in a thin gold film over a wide range of features. It is observed that two well-separated and high transmission efficiency peaks could be obtained by designing the parameters in the CSHAs for both p-polarized and s-polarized waves; and a nice transmission band-pass is also observed by specific parameters of a CSHA too. It implicates the possibility to obtain a desired polarization-independent transmission spectrum from the CSHAs by designing their parameters. These findings provide potential applications of the metallic nano-structures in optical filters, optical band-pass, optical imaging, optical sensing, and biosensors.

disorder effect on quantum transport properties of ultra thin Fe film

NASA Astrophysics Data System (ADS)

Zhang, Xiaotian; Nakamura, Kohji; Shindou, Ryuichi

2015-03-01

Ferromagnetic ultrathin films are experimentally known to often exhibit perpendicular magnetic anisotropy, when being placed on certain substrates. Based on reported ab-initio band calculations of free-standing Fe-monolayer and that on MgO substrate, we will introduce an effective tight-binding model, which capture a part of an electronic structure near Fermi level for both cases. We will show that the model supports electronic bands with non-zero Chern number and chiral edge modes which cross a direct band gap on the order of 50meV. Unluckily, however, the direct band gap is also masked by another dispersive bands which have non-zero Berry's curvature in the k-space. To demonstrate how disorder kills conducting characters of the latter bulk bands while leave intact those of the chiral edge modes, we will clarify behaviors of localization length and conductance in the effective model with on-site disorders.

Performance of horn-coupled transition edge sensors for L- and S-band optical detection on the SAFARI instrument

NASA Astrophysics Data System (ADS)

Goldie, D. J.; Glowacka, D. M.; Withington, S.; Chen, Jiajun; Ade, P. A. R.; Morozov, D.; Sudiwala, R.; Trappe, N. A.; Quaranta, O.

2016-07-01

We describe the geometry, architecture, dark- and optical performance of ultra-low-noise transition edge sensors as THz detectors for the SAFARI instrument. The TESs are fabricated from superconducting Mo/Au bilayers coupled to impedance-matched superconducting β-phase Ta thin-film absorbers. The detectors have phonon-limited dark noise equivalent powers of order 0.5 - 1.0 aW/ √ Hz and saturation powers of order 20 - 40 fW. The low temperature test configuration incorporating micro-machined backshorts is also described, and construction and typical performance characteristics for the optical load are shown. We report preliminary measurements of the optical performance of these TESs for two SAFARI bands; L-band at 110 - 210 μm and S-band 34 - 60 μm .

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

NASA Astrophysics Data System (ADS)

Jain, Prateek; Rastogi, Priyank; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-07-01

The direct and indirect valleys in Germanium (Ge) are separated by a very small offset, which opens up the prospect of direct tunneling in the Γ valley of an extended Ge source tunnel field effect transistor (TFET). We explore the impact of thickness scaling of extended Ge source lateral TFET on the band to band tunneling (BTBT) current. The Ge source is extended inside the gate by 2 nm to confine the tunneling in Ge only. We observe that as the thickness is scaled, the band alignment at the Si/Ge heterojunction changes significantly, which results in an increase in Ge to Si BTBT current. Based on density functional calculations, we first obtain the band structure parameters (bandgap, effective masses, etc.) for the Ge and Si slabs of varying thickness, and these are then used to obtain the thickness dependent Kane's BTBT tunneling parameters. We find that electrostatics improves as the thickness is reduced in the ultra-thin Ge film ( ≤ 10 nm). The ON current degrades as we scale down in thickness; however, the subthreshold slope ( S S AVG ) improves remarkably with thickness scaling due to subsurface BTBT. We predict that 8 nm thin devices offer the best option for optimized ON current and S S AVG .

Bio-inspired, large scale, highly-scattering films for nanoparticle-alternative white surfaces

PubMed Central

Syurik, Julia; Siddique, Radwanul Hasan; Dollmann, Antje; Gomard, Guillaume; Schneider, Marc; Worgull, Matthias; Wiegand, Gabriele; Hölscher, Hendrik

2017-01-01

Inspired by the white beetle of the genus Cyphochilus, we fabricate ultra-thin, porous PMMA films by foaming with CO2 saturation. Optimising pore diameter and fraction in terms of broad-band reflectance results in very thin films with exceptional whiteness. Already films with 60 µm-thick scattering layer feature a whiteness with a reflectance of 90%. Even 9 µm thin scattering layers appear white with a reflectance above 57%. The transport mean free path in the artificial films is between 3.5 µm and 4 µm being close to the evolutionary optimised natural prototype. The bio-inspired white films do not lose their whiteness during further shaping, allowing for various applications. PMID:28429805

Bio-inspired, large scale, highly-scattering films for nanoparticle-alternative white surfaces

NASA Astrophysics Data System (ADS)

Syurik, Julia; Siddique, Radwanul Hasan; Dollmann, Antje; Gomard, Guillaume; Schneider, Marc; Worgull, Matthias; Wiegand, Gabriele; Hölscher, Hendrik

2017-04-01

Inspired by the white beetle of the genus Cyphochilus, we fabricate ultra-thin, porous PMMA films by foaming with CO2 saturation. Optimising pore diameter and fraction in terms of broad-band reflectance results in very thin films with exceptional whiteness. Already films with 60 µm-thick scattering layer feature a whiteness with a reflectance of 90%. Even 9 µm thin scattering layers appear white with a reflectance above 57%. The transport mean free path in the artificial films is between 3.5 µm and 4 µm being close to the evolutionary optimised natural prototype. The bio-inspired white films do not lose their whiteness during further shaping, allowing for various applications.

Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature

NASA Astrophysics Data System (ADS)

Nishanthini, R.; Muthu Menaka, M.; Pandi, P.; Bahavan Palani, P.; Neyvasagam, K.

The copper telluride (Cu2Te) thin film of thickness 240nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150∘C and 250∘C for 1h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet-Visible Spectroscopy (UV-VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150∘C to 250∘C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

Thermally controlled femtosecond pulse shaping using metasurface based optical filters

NASA Astrophysics Data System (ADS)

Rahimi, Eesa; Şendur, Kürşat

2018-02-01

Shaping of the temporal distribution of the ultrashort pulses, compensation of pulse deformations due to phase shift in transmission and amplification are of interest in various optical applications. To address these problems, in this study, we have demonstrated an ultra-thin reconfigurable localized surface plasmon (LSP) band-stop optical filter driven by insulator-metal phase transition of vanadium dioxide. A Joule heating mechanism is proposed to control the thermal phase transition of the material. The resulting permittivity variation of vanadium dioxide tailors spectral response of the transmitted pulse from the stack. Depending on how the pulse's spectrum is located with respect to the resonance of the band-stop filter, the thin film stack can dynamically compress/expand the output pulse span up to 20% or shift its phase up to 360°. Multi-stacked filters have shown the ability to dynamically compensate input carrier frequency shifts and pulse span variations besides their higher span expansion rates.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

A real time index of geomagnetic background noise for the MAD (Magnetic Anomaly Detection) frequency band

NASA Astrophysics Data System (ADS)

Bernardi, A.; Fraser-Smith, A. C.; Villard, O. G.

1985-02-01

An index of geomagnetic activity in the upper part of the ultra low frequency (ULF) range (less than 4.55 Hz) has been developed. This index will be referred to as the MA index (magnetic activity index). The MA index is prepared every half hour and is a measure of the strength of the geomagnetic activity in the Pc1-Pc3 pulsation frequency range during that half hour period. Activity in the individual Pc pulsation ranges can also be measured, if desired. The index is calculated from the running average of the full-wave rectified values of the band pass filtered geomagnetic signals and thus it provides a better indication of the magnitude of these band pass filtered magnetic pulsations than does the ap index, for example. Daily variations of the band pass filtered magnetic signals are also better captured by the MA index. To test this system we used analog tape recordings of wide-band geomagnetic signals. The indices for these tapes are presented in the form of plots, together with a comparison with the ap indices of the same time intervals. The MA index shows the daily variation of the geometric signals quite clearly during times when there is strong activity, i.e., when the ap index values are large. Because impulsive signals, such as lightning discharges, tend to be suppressed in the averaging process, the MA index is insensitive to impulsive noise. It is found that the time variation of the MA index is in general markedly different from the variation of the ap index for the same time intervals.

High-extinction virtually imaged phased array-based Brillouin spectroscopy of turbid biological media

NASA Astrophysics Data System (ADS)

Fiore, Antonio; Zhang, Jitao; Shao, Peng; Yun, Seok Hyun; Scarcelli, Giuliano

2016-05-01

Brillouin microscopy has recently emerged as a powerful technique to characterize the mechanical properties of biological tissue, cell, and biomaterials. However, the potential of Brillouin microscopy is currently limited to transparent samples, because Brillouin spectrometers do not have sufficient spectral extinction to reject the predominant non-Brillouin scattered light of turbid media. To overcome this issue, we combined a multi-pass Fabry-Perot interferometer with a two-stage virtually imaged phased array spectrometer. The Fabry-Perot etalon acts as an ultra-narrow band-pass filter for Brillouin light with high spectral extinction and low loss. We report background-free Brillouin spectra from Intralipid solutions and up to 100 μm deep within chicken muscle tissue.

Elimination of surface band bending on N-polar InN with thin GaN capping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuzmík, J., E-mail: Jan.Kuzmik@savba.sk; Haščík, Š.; Kučera, M.

2015-11-09

0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is mostmore » readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.« less

Ultra-High Efficiency, High-Concentration PV System Based On Spectral Division Between GaInP/GaInAs/Ge And BPC Silicon Cells

NASA Astrophysics Data System (ADS)

Benítez, P.; Mohedano, R.; Buljan, M.; Miñano, J. C.; Sun, Y.; Falicoff, W.; Vilaplana, J.; Chaves, J.; Biot, G.; López, J.

2011-12-01

A novel HCPV nonimaging concentrator concept with high concentration (>500×) is presented. It uses the combination of a commercial concentration GaInP/GaInAs/Ge 3J cell and a concentration Back-Point-Contact (BPC) concentration silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell's reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free-form RXI-type concentrator with a band-pass filter embedded it, both POE and SOE performing Köhler integration to produce light homogenization. The band-pass filter sends the IR photons in the 900-1200 nm band to the silicon cell. Computer simulations predict that four-terminal terminal designs could achieve ˜46% added cell efficiencies using commercial 39% 3J and 26% Si cells. A first proof-of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ˜100× and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J with peak efficiency of 36.9%.

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

DOE PAGES

Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

2015-05-28

In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

UltraForm Finishing (UFF) a 5-axis computer controlled precision optical component grinding and polishing system

NASA Astrophysics Data System (ADS)

Bechtold, Michael; Mohring, David; Fess, Edward

2007-05-01

OptiPro Systems has developed a new finishing process for the manufacturing of precision optical components. UltraForm Finishing (UFF) has evolved from a tire shaped tool with polishing material on its periphery, to its newest design, which incorporates a precision rubber wheel wrapped with a band of polishing material passing over it. Through our research we have developed a user friendly graphical interface giving the optician a deterministic path for finishing precision optical components. Complex UFF Algorithms combine the removal function and desired depth of removal into a motion controlled tool path which minimizes surface roughness and form errors. The UFF process includes 5 axes of computer controlled motion, (3 linear and 2 rotary) which provide the flexibility for finishing a variety of shapes including spheres, aspheres, and freeform optics. The long arm extension, along with a range of diameters for the "UltraWheel" provides a unique solution for the finishing of steep concave shapes such as ogives and domes. The UltraForm process utilizes, fixed and loose abrasives, in combination with our proprietary "UltraBelts" made of a range of materials such as polyurethane, felt, resin, diamond and others.

A compact planar multi-broad band monopole antenna for mobile devices

NASA Astrophysics Data System (ADS)

Zhong, Xiaoqing; Yao, Bin; Zheng, Qinhong; Yang, Jikong; Cao, Xiangqi

2015-10-01

A Multiple-frequency broadband planar monopole antenna is proposed in this Paper. The antenna is stimulated and numerically optimized by HFSS13.0 (High Frequency Structure Simulator). The size of it is 39mm×22mm×1.7mm. The antenna resonates at many frequencies. The parameter S11<=-6dB means the proposed antenna matches well with its feed-line and covers many useful operation frequency bands, including 2G(DCS1800 and PCS1900), 3G(UMTS), 4G(LTE2300 and LTE2500), ISM, WLAN. It is quiet appropriate for the present ultra-thin smart phones

Ultra wide band 3-D cross section (RCS) holography

NASA Astrophysics Data System (ADS)

Collins, H. D.; Hall, T. E.

1992-07-01

Ultra wide band impulse holography is an exciting new concept for predictive radar cross section (RCS) evaluation employing near-field measurements. Reconstruction of the near-field hologram data maps the target's scattering areas, and uniquely identifies the 'hot spot' locations on the target. In addition, the target and calibration sphere's plane wave angular spectrums are computed (via digital algorithm) and used to generate the target's far-field RCS values in three dimensions for each frequency component in the impulse. Thin and thick targets are defined in terms of their near-field amplitude variations in range. Range gating and computer holographic techniques are applied to correct these variations. Preliminary experimental results on various targets verify the concept of RCS holography. The unique 3-D presentation (i.e., typically containing 524,288 RCS values for a 1024 (times) 512 sampled aperture for every frequency component) illustrates the efficacy of target recognition in terms of its far-field plane wave angular spectrum image. RCS images can then be viewed at different angles for target recognition, etc.

Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

NASA Astrophysics Data System (ADS)

Goto, Takeyoshi; Kinugasa, Tomoya

2018-05-01

The first electronic transition (A˜ ← X˜) and the hydrogen bonding state of an ultra-thin water layer of nanometer thickness between two α-alumina surfaces (0.5-20 nm) were studied using far-ultraviolet (FUV) spectroscopy in the wavelength range 140-180 nm. The ultra-thin water layer of nanometer thickness was prepared by squeezing a water droplet ( 1 μL) between a highly polished α-alumina prism and an α-alumina plate using a high pressure clamp ( 4.7 MPa), and the FUV spectra of the water layer at different thicknesses were measured using the attenuated total reflection method. As the water layer became thinner, the A˜ ← X˜ bands were gradually shifted to higher or lower energy relative to that of bulk water; at thicknesses smaller than 4 nm, these shifts were substantial (0.1-0.2 eV) in either case. The FUV spectra of the water layer with thickness < 4 nm indicate the formation of structured ice-like hydrogen bond (H-bond) layers for the higher energy shifts or the formation of slightly weaker H-bond layers as compared to those in the bulk liquid state for lower energy shifts. In either case, the H-bond structure of bulk liquid water is nearly lost at thicknesses below 4 nm, because of steric hydration forces between the α-alumina surfaces.

Utility of Thin-Film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Dickman, J. E.; Hepp, A. F.; Morel, D. L.; Ferekides, C. S.; Tuttle, J. R.; Hoffman, D. J.; Dhere, N. G.

2004-01-01

The thin-film solar cell program at NASA GRC is developing solar cell technologies for space applications which address two critical metrics: specific power (power per unit mass) and launch stowed volume. To be competitive for many space applications, an array using thin film solar cells must significantly increase specific power while reducing stowed volume when compared to the present baseline technology utilizing crystalline solar cells. The NASA GRC program is developing two approaches. Since the vast majority of the mass of a thin film solar cell is in the substrate, a thin film solar cell on a very lightweight flexible substrate (polymer or metal films) is being developed as the first approach. The second approach is the development of multijunction thin film solar cells. Total cell efficiency can be increased by stacking multiple cells having bandgaps tuned to convert the spectrum passing through the upper cells to the lower cells. Once developed, the two approaches will be merged to yield a multijunction, thin film solar cell on a very lightweight, flexible substrate. The ultimate utility of such solar cells in space require the development of monolithic interconnections, lightweight array structures, and ultra-lightweight support and deployment techniques.

Broadband nonlinear optical response in multi-layer black phosphorus: an emerging infrared and mid-infrared optical material.

PubMed

Lu, S B; Miao, L L; Guo, Z N; Qi, X; Zhao, C J; Zhang, H; Wen, S C; Tang, D Y; Fan, D Y

2015-05-04

Black phosphorous (BP), the most thermodynamically stable allotrope of phosphorus, is a high-mobility layered semiconductor with direct band-gap determined by the number of layers from 0.3 eV (bulk) to 2.0 eV (single layer). Therefore, BP is considered as a natural candidate for broadband optical applications, particularly in the infrared (IR) and mid-IR part of the spectrum. The strong light-matter interaction, narrow direct band-gap, and wide range of tunable optical response make BP as a promising nonlinear optical material, particularly with great potentials for infrared and mid-infrared opto-electronics. Herein, we experimentally verified its broadband and enhanced saturable absorption of multi-layer BP (with a thickness of ~10 nm) by wide-band Z-scan measurement technique, and anticipated that multi-layer BPs could be developed as another new type of two-dimensional saturable absorber with operation bandwidth ranging from the visible (400 nm) towards mid-IR (at least 1930 nm). Our results might suggest that ultra-thin multi-layer BP films could be potentially developed as broadband ultra-fast photonics devices, such as passive Q-switcher, mode-locker, optical switcher etc.

Material and Phonon Engineering for Next Generation Acoustic Devices

NASA Astrophysics Data System (ADS)

Kuo, Nai-Kuei

This thesis presents the theoretical and experimental work related to micromachining of low intrinsic loss sapphire and phononic crystals for engineering new classes of electroacoustic devices for frequency control applications. For the first time, a low loss sapphire suspended membrane was fabricated and utilized to form the main body of a piezoelectric lateral overtone bulk acoustic resonator (LOBAR). Since the metalized piezoelectric transducer area in a LOBAR is only a small fraction of the overall resonant cavity (made out of sapphire), high quality factor (Q) overtones are attained. The experiment confirms the low intrinsic mechanical loss of the transferred sapphire thin film, and the resonators exhibit the highest Q of 5,440 at 2.8 GHz ( f·Q of 1.53.1013 Hz). This is also the highest f·Q demonstrated for aluminum-nitride-(AIN)-based Lamb wave devices to date. Beyond demonstrating a low loss device, this experimental work has laid the foundation for the future development of new micromechanical devices based on a high Q, high hardness and chemically resilient material. The search for alternative ways to more efficiently perform frequency control functionalities lead to the exploration of Phononic Crystal (PnC) structures in AIN thin films. Four unit cell designs were theoretically and experimentally investigated to explore the behavior of phononic bandgaps (PBGs) in the ultra high frequency (UHF) range: (i) the conventional square lattice with circular air scatterer, (ii) the inverse acoustic bandgap (IABG) structure, (iii) the fractal PnC, and (iv) the X-shaped PnC. Each unit cell has its unique frequency characteristic that was exploited to synthesize either cavity resonators or improve the performance of acoustic delay lines. The PBGs operate in the range of 770 MHz to 1 GHz and exhibit a maximum acoustic rejection of 40 dB. AIN Lamb wave transducers (LWTs) were employed for the experimental demonstration of the PBGs and cavity resonances. Ultra-wide bandwidth (˜10%) was achieved by implementing slanted finger transducers (SFIT) in thin film AIN. The impulse response and coupling of modes (COM) models commonly used for surface acoustic wave (SAW) devices were developed to design the operating frequency and bandwidth of the LWTs. These techniques enabled access to fast frequency solutions (impulse response method) and good pass-band ripple estimation (COM) for any piezoelectric Lamb-wave based device. The conventional and IABG unit cell designs were explored for the making of cavity resonators. A PnC cavity made with conventional design exhibits a Q of 675 at 665 MHz. Despite the low Q, its value is very high when the volume of the cavity is taken into account ( Q per unit volume of 3.1017/m3). In order to understand the limited value of Q a detailed finite element analysis is performed to unveil its dependence on the specific design of the transducer. The capabilities of the X-shaped PnCs were harvested for synthesizing a method to suppress the sidelobe response of an AIN Lamb wave (SFIT) delay line. 10 dB of sidelobe magnitude reduction was attained while leaving the pass-band unaltered. Although at a very preliminary stage, the theoretical and experimental work on AIN PnC has demonstrated that new acoustic capabilities are enabled by these metamaterials. Future electroacoustic devices that perform frequency control functions in a compact and low loss fashion can now be envisioned.

Advanced germanium layer transfer for ultra thin body on insulator structure

NASA Astrophysics Data System (ADS)

Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

2016-12-01

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

Electronic and magnetic structure of ultra-thin Ni films grown on W(110)

NASA Astrophysics Data System (ADS)

Calloni, A.; Bussetti, G.; Berti, G.; Yivlialin, R.; Camera, A.; Finazzi, M.; Duò, L.; Ciccacci, F.

2016-12-01

We studied the electronic structure of thin Ni films grown on a W(110) single crystal, as a function of the Ni thickness, by means of angle-resolved photoemission and inverse photoemission spectroscopy, also with spin resolution. The results are discussed in the light of the different stages characterizing the transition from the pseudomorphic bcc to the fully relaxed fcc phase. A clear spin polarization is detected as soon as a bulk-like electronic structure is observed. In these conditions, we characterized the exchange splitting of the occupied bands at the Γbar and Mbar points of the surface Brillouin zone, providing further experimental support to previous interpretations of photoemission spectra from bulk Ni.

Two-band induced superconductivity in single-layer graphene and topological insulator bismuth selenide

NASA Astrophysics Data System (ADS)

Talantsev, E. F.; Crump, W. P.; Tallon, J. L.

2018-01-01

Proximity-induced superconductivity in single-layer graphene (SLG) and in topological insulators represent almost ideal examples of superconductivity in two dimensions. Fundamental mechanisms governing superconductivity in the 2D limit are of central interest for modern condensed-matter physics. To deduce fundamental parameters of superconductor/graphene/superconductor and superconductor/bismuth selenide/superconductor junctions we investigate the self-field critical currents in these devices using the formalism of the Ambegaokar-Baratoff model. Our central finding is that the induced superconducting state in SLG and bismuth selenide each exhibits gapping on two superconducting bands. Based on recent results obtained on ultra-thin films of natural superconductors, including single-atomic layer of iron selenide, double and triple atomic layers of gallium, and several atomic layer tantalum disulphide, we conclude that a two-band induced superconducting state in SLG and bismuth selenide is part of a wider, more general multiple-band phenomenology of currently unknown origin.

Slow wave structures integrated with ferromagnetic and ferro-electric thin films for smart RF applications

NASA Astrophysics Data System (ADS)

Rahman, B. M. Farid

Modern communications systems are following a common trend to increase the operational frequency, level of integration and number of frequency bands. Although 90-95% components in a cell phone are passives which take 80% of the total board area. High performance RF passive components play limited role and are desired towards this technological advancement. Slow wave structure is one of the most promising candidates to design compact RF and mm-Wave passive components. Slow wave structures are the specially designed transmission line realized by placing the alternate narrow and wide signal conductors in order to reduce the physical size of the components. This dissertation reports multiband slow wave structures integrated with ferromagnetic and ferroelectric thin films and their RF applications. A comparative study on different types of coplanar wave-guide (CPW) slow wave structures (SWS) has been demonstrated for the first time. Slow wave structures with various shapes have been investigated and optimized with various signal conductor shapes, ground conductor shapes and pitch of the sections. Novel techniques i.e. the use of the defected ground structure and the different signal conductor length has been implemented to achieve higher slow wave effect with minimum loss. The measured results have shown the reduction of size over 43.47% and 37.54% in the expense of only 0.27dB and 0.102dB insertion loss respectively which can reduce the area of a designed branch line coupler by 68% and 61% accordingly. Permalloy (Py) is patterned on top of the developed SWS for the first time to further increase the slow wave effect and provide tunable inductance value. High frequency applications of Py are limited by its ferro-magnetic resonance frequency since the inductance value decreases beyond that. Sub-micrometer patterning of Py has increased FMR frequency until 6.3GHz and 3.2GHz by introducing the shape anisotropy. For the SWS with patterned Py, the size of the quarter wavelength has been reduced from 14.86mm to 4.7mm at 2GHz. DC current which is the most convenient and available tuning parameter in a practical circuit board has been used, the developed SWS can function as quarter wave transmission line from 2GHz to 1.80GHz (i.e. 10%). Lead Zirconium Titanate (PZT) is grown and patterned on top of the section with standard sol-gel method to increase capacitance value. The inter digit capacitor type structure along with PZT thin film has been adopted and results showed capacitance value increment by 36%. An electric field between signal and ground has been applied to change the polarization of the thin film which resulted in a tuning of center frequency by 15% (1.75GHz to 2GHz). In addition, a novel approach has been implemented by integrating both the ferromagnetic and the ferroelectric thin films simultaneously to achieve higher slow wave effect, wider tuning range and smaller variation in Characteristics Impedance. The size of the final structure for a quarter wavelengths has been reduced from 14.86mm to 3.98mm while the center frequency has been tuned from 2GHz to 1.5GHz (i.e. 25%). Tunable RF applications of the ferro-magnetic thin films are also demonstrated as a DC current band pass filter, tunable noise suppressor and meander line inductor. A well designed frequency tunable band pass filter (BPF) is implemented at 4GHz with patterned Permalloy. The pass band frequency of a band pass filter has been tuned from 4GHz to 4.02GHz by applying a DC current. The suppression frequency of the developed noise suppressor is tuned from 4.8GHz to 6GHz and 4GHz to 6GHz by changing the aspect ratio of the Py bars and the gap in between them. Moreover, a novel way of tuning the stop band frequency of the noise suppressor by using an external direct current changed the suppression frequency from 6GHz to 4.3GHz. A pass band loss of 1.5%, less than 2° transmitted signal phase distortion, and 3 dB extra return loss of the designed noise suppressor showed the promise the noise suppressors. The increase in the number of turns of a meander line inductor has increased the inductance density from 2565nH/m to 3396nH/m while application of the patterned Py has increased the inductance density from 2565nH/m to 3060nH/m. The tuning of the meander line inductor has been performed by applying DC current until the FMR frequency 4.51GHz.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

PubMed

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe2.

PubMed

Winkler, Florian; Tavabi, Amir H; Barthel, Juri; Duchamp, Martial; Yucelen, Emrah; Borghardt, Sven; Kardynal, Beata E; Dunin-Borkowski, Rafal E

2017-07-01

The phase and amplitude of the electron wavefunction that has passed through ultra-thin flakes of WSe 2 is measured from high-resolution off-axis electron holograms. Both the experimental measurements and corresponding computer simulations are used to show that, as a result of dynamical diffraction, the spatially averaged phase does not increase linearly with specimen thickness close to an [001] zone axis orientation even when the specimen has a thickness of only a few layers. It is then not possible to infer the local specimen thickness of the WSe 2 from either the phase or the amplitude alone. Instead, we show that the combined analysis of phase and amplitude from experimental measurements and simulations allows an accurate determination of the local specimen thickness. The relationship between phase and projected potential is shown to be approximately linear for extremely thin specimens that are tilted by several degrees in certain directions from the [001] zone axis. A knowledge of the specimen thickness then allows the electrostatic potential to be determined from the measured phase. By using this combined approach, we determine a value for the mean inner potential of WSe 2 of 18.9±0.8V, which is 12% lower than the value calculated from neutral atom scattering factors. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Widely bandwidth-tunable silicon filter with an unlimited free-spectral range.

PubMed

St-Yves, Jonathan; Bahrami, Hadi; Jean, Philippe; LaRochelle, Sophie; Shi, Wei

2015-12-01

Next-generation high-capacity optical networks require flexible allocation of spectrum resources, for which low-cost optical filters with an ultra-wide bandwidth tunability beyond 100 GHz are desired. We demonstrate an integrated band-pass filter with the bandwidth continuously tuned across 670 GHz (117-788 GHz) which, to the best of our knowledge, is the widest tuning span ever demonstrated on a silicon chip. The filter also features simultaneous wavelength tuning and an unlimited free spectral range. We measured an out-of-band contrast of up to 55 dB, low in-band ripples of less than 0.3 dB, and in-band group delay variation of less than 8 ps. This result was achieved using cascaded Bragg-grating-assisted contra-directional couplers and micro-heaters on the 220 nm silicon-on-insulator platform with a very compact footprint of less than 7000  μm2. Another design with the bandwidth continuously tunable from 50 GHz to 1 THz is also presented.

Development of high damage threshold multilayer thin film beam combiner for laser application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nand, Mangla, E-mail: mnand@rrcat.gov.in; Babita,; Jena, S.

2016-05-23

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm{sup 2} at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Development of high damage threshold multilayer thin film beam combiner for laser application

NASA Astrophysics Data System (ADS)

Nand, Mangla; Babita, Jena, S.; Tokas, R. B.; Rajput, P.; Mukharjee, C.; Thakur, S.; Jha, S. N.; Sahoo, N. K.

2016-05-01

A polarized wavelength multiplexer with high laser induced damage threshold has been developed to combine two laser beam of high peak power in the visible region. The present wavelength multiplexer is a multilayer thin film device deposited by reactive electron beam evaporation. The developed device is capable of combining two p-polarized laser beams of peak power density of 1.7 GW/cm2 at an angle of incidence of 45°. High transmission (T> 90%) in high pass region and high reflection (R> 99%) in stop band region have been achieved.

Dissolution-and-reduction CVD synthesis of few-layer graphene on ultra-thin nickel film lifted off for mode-locking fiber lasers

PubMed Central

Peng, Kaung-Jay; Lin, Yung-Hsiang; Wu, Chung-Lun; Lin, Sheng-Fong; Yang, Chun-Yu; Lin, Shih-Meng; Tsai, Din-Ping; Lin, Gong-Ru

2015-01-01

The in-situ dissolution-and-reduction CVD synthesized few-layer graphene on ultra-thin nickel catalyst film is demonstrated at temperature as low as 550 °C, which can be employed to form transmission-type or reflection-type saturable absorber (SA) for mode-locking the erbium-doped fiber lasers (EDFLs). With transmission-type graphene SA, the EDFL shortens its pulsewidth from 483 to 441 fs and broadens its spectral linewidth from 4.2 to 6.1 nm with enlarging the pumping current from 200 to 900 mA. In contrast, the reflection-type SA only compresses the pulsewidth from 875 to 796 fs with corresponding spectral linewidth broadened from 2.2 to 3.3 nm. The reflection-type graphene mode-locker increases twice of its equivalent layer number to cause more insertion loss than the transmission-type one. Nevertheless, the reflection-type based saturable absorber system can generate stabilized soliton-like pulse easier than that of transmission-type system, because the nonlinearity induced self-amplitude modulation depth is simultaneously enlarged when passing through the graphene twice under the retro-reflector design. PMID:26328535

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

The effects of wavelength on photodegradation depth profiles in Japanese cedar (Cryptomeria japonica D. Don) earlywood

Treesearch

Yutaka Kataoka; Makoto Kiguchi; R. Sam Williams; Philip D. Evans

2006-01-01

FT-IR microscopy was used to depth profile the photodegradation of Japanese cedar earlywood exposed to monochromatic light in the UV and visible ranges (band pass: 20nm). Parallel experiments assessed the transmission of the light through thin sections of Japanese cedar. The depth of photodegradation increased with wavelength up to and including the violet region of...

Pharmacognostic Screening of Piper trichostachyon Fruits and its Comparative Analysis with Piper nigrum Using Chromatographic Techniques.

PubMed

Upadhya, Vinayak; Pai, Sandeep R; Ankad, Gireesh M; Hegde, Harsha V

2016-05-01

Piper trichostachyon is a wild, endemic Piper species from Western Ghats of India. The folklore healers of Belagavi region use this plant, similar to Piper nigrum. The present study investigates the comparison between P. nigrum and P. trichostachyon using pharmacognostic parameters. Pharmacognostic evaluation was carried out in terms of morphological, microscopic characters, and phytochemical analysis using standard methods. Comparative physicochemical analysis between P. trichostachyon and P. nigrum was also carried out through estimation of micro-macro nutrients, high-performance thin layer chromatography (HPTLC) investigation and using piperine as a marker compound for reversed phase-ultra flow liquid chromatographic (RP-UFLC) technique. P. trichostachyon grows in the forests, and the fruits are morphologically similar to P. nigrum fruits, so the name in Kannada "Kaadu Kalu menasu" (wild/forest black pepper). The microscopy revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells, and yellowish brown pigment layer, parenchymatous cells. The presence of alkaloids, oil, and tannins were observed in P. trichostachyon fruits. The HPTLC studies visibly indicated differences among two species with 12 peaks and varied banding pattern. RP-UFLC results showed less amount of piperine in P. trichostachyon (0.05 ± 0.002 mg/g) than in P. nigrum (16.14 ± 0.807 mg/g). The study reports on pharmacognostic parameters of P. trichostachyon for the 1(st) time and will be useful for the identification and authentication. The comparative HPTLC and RP-UFLC studies resolve the differentiation impasse among two species. However, further biological efficacy studies are required to establish its use in traditional medicine. Piper trichostachyon grows in the forests, and the fruits are morphologically similar to Piper nigrum fruitsThe microscopy of P. trichostachyon revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells and yellowish brown pigment layer, parenchymatous cellsThe high-performance thin layer chromatography studies visibly indicated differences among two species with varied banding patternReversed phase-ultra flow liquid chromatographic results showed less amount of piperine in P. trichostachyon than in P. nigrum. Abbreviation used: HPTLC: High Performance Thin Layer Chromatography, RP-UFLC: Reversed phase-ultra flow liquid chromatographic analysis, DST: Length of line, Maj: Length of large half axis for ellipse RDS - radius for circle, Rf: Retention Factor, TS: Transverse Section, TLC: Thin Layer Chromatography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masuda, Takuya; PRESTO, Japan Science and Technology Agency; Yoshikawa, Hideki

In situ electrochemical X-ray photoelectron spectroscopy (XPS) apparatus, which allows XPS at solid/liquid interfaces under potential control, was constructed utilizing a microcell with an ultra-thin Si membrane, which separates vacuum and a solution. Hard X-rays from a synchrotron source penetrate into the Si membrane surface exposed to the solution. Electrons emitted at the Si/solution interface can pass through the membrane and be analyzed by an analyzer placed in vacuum. Its operation was demonstrated for potential-induced Si oxide growth in water. Effect of potential and time on the thickness of Si and Si oxide layers was quantitatively determined at sub-nanometer resolution.

Thin-film optical pass band filters based on new photo-lithographic process for CaSSIS FPA detector on Exomars TGO mission: development, integration, and test

NASA Astrophysics Data System (ADS)

Gambicorti, L.; Piazza, D.; Gerber, M.; Pommerol, A.; Roloff, V.; Ziethe, R.; Zimmermann, C.; Da Deppo, V.; Cremonese, G.; Ficai Veltroni, I.; Marinai, M.; Di Carmine, E.; Bauer, T.; Moebius, P.; Thomas, N.

2016-08-01

A new technique based on photolithographic processes of thin-film optical pass band coatings on a monolithic substrate has been applied to the filters of the Focal Plane Assembly (FPA) of the Colour and Stereo Surface Imaging System (CaSSIS) that will fly onboard of the ExoMars Trace Gas Orbiter to be launched in March 2016 by ESA. The FPA including is one of the spare components of the Simbio-Sys instrument of the Italian Space Agency (ASI) that will fly on ESA's Bepi Colombo mission to Mercury. The detector, developed by Raytheon Vision Systems, is a 2kx2k hybrid Si-PIN array with a 10 μm pixel. The detector is housed within a block and has filters deposited directly on the entrance window. The window is a 1 mm thick monolithic plate of fused silica. The Filter Strip Assembly (FSA) is produced by Optics Balzers Jena GmbH and integrated on the focal plane by Leonardo-Finmeccanica SpA (under TAS-I responsibility). It is based on dielectric multilayer interference coatings, 4 colour bands selected with average in-band transmission greater than 95 percent within wavelength range (400-1100 nm), giving multispectral images on the same detector and thus allows CaSSIS to operate in push-frame mode. The Field of View (FOV) of each colour band on the detector is surrounded by a mask of low reflective chromium (LRC), which also provides with the straylight suppression required (an out-of-band transmission of less than 10-5/nm). The mask has been shown to deal effectively with cross-talk from multiple reflections between the detector surface and the filter. This paper shows the manufacturing and optical properties of the FSA filters and the FPA preliminary on-ground calibration results.

Effective distance adaptation traffic dispatching in software defined IP over optical network

NASA Astrophysics Data System (ADS)

Duan, Zhiwei; Li, Hui; Liu, Yuze; Ji, Yuefeng; Li, Hongfa; Lin, Yi

2017-10-01

The rapid growth of IP traffic has contributed to the wide deployment of optical devices (ROADM/OXC, etc.). Meanwhile, with the emergence and application of high-performance network services such as ultra-high video transmission, people are increasingly becoming more and more particular about the quality of service (QoS) of network. However, the pass-band shape of WSSs which is utilized in the ROADM/OXC is not ideal, causing narrowing of spectrum. Spectral narrowing can lead to signal impairment. Therefore, guard-bands need to be inserted between adjacent paths. In order to minimize the bandwidth waste due to guard bands, we propose an effective distance-adaptation traffic dispatching algorithm in IP over optical network based on SDON architecture. We use virtualization technology to set up virtual resources direct links by extracting part of the resources on paths which meet certain specific constraints. We also assign different bandwidth to each IP request based on path length. There is no need for guard-bands between the adjacent paths on the virtual link, which can effectively reduce the number of guard-bands and save the spectrum.

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Fabrication of Quench Condensed Thin Films Using an Integrated MEMS Fab on a Chip

NASA Astrophysics Data System (ADS)

Lally, Richard; Reeves, Jeremy; Stark, Thomas; Barrett, Lawrence; Bishop, David

Atomic calligraphy is a microelectromechanical systems (MEMS)-based dynamic stencil nanolithography technique. Integrating MEMS devices into a bonded stacked array of three die provides a unique platform for conducting quench condensed thin film mesoscopic experiments. The atomic calligraphy Fab on a Chip process incorporates metal film sources, electrostatic comb driven stencil plate, mass sensor, temperature sensor, and target surface into one multi-die assembly. Three separate die are created using the PolyMUMPs process and are flip-chip bonded together. A die containing joule heated sources must be prepared with metal for evaporation prior to assembly. A backside etch of the middle/central die exposes the moveable stencil plate allowing the flux to pass through the stencil from the source die to the target die. The chip assembly is mounted in a cryogenic system at ultra-high vacuum for depositing extremely thin films down to single layers of atoms across targeted electrodes. Experiments such as the effect of thin film alloys or added impurities on their superconductivity can be measured in situ with this process.

Optically trapped atomic resonant devices for narrow linewidth spectral imaging

NASA Astrophysics Data System (ADS)

Qian, Lipeng

This thesis focuses on the development of atomic resonant devices for spectroscopic applications. The primary emphasis is on the imaging properties of optically thick atomic resonant fluorescent filters and their applications. In addition, this thesis presents a new concept for producing very narrow linewidth light as from an atomic vapor lamp pumped by a nanosecond pulse system. This research was motivated by application for missile warning system, and presents an innovative approach to a wide angle, ultra narrow linewidth imaging filter using a potassium vapor cell. The approach is to image onto and collect the fluorescent photons emitted from the surface of an optically thick potassium vapor cell, generating a 2 GHz pass-band imaging filter. This linewidth is narrow enough to fall within a Fraunhefer dark zone in the solar spectrum, thus make the detection solar blind. Experiments are conducted to measure the absorption line shape of the potassium resonant filter, the quantum efficiency of the fluorescent behavior, and the resolution of the fluorescent image. Fluorescent images with different spatial frequency components are analyzed by using a discrete Fourier transform, and the imaging capability of the fluorescent filter is described by its Modulation Transfer Function. For the detection of radiation that is spectrally broader than the linewidth of the potassium imaging filter, the fluorescent image is seen to be blurred by diffuse fluorescence from the slightly off resonant photons. To correct this, an ultra-thin potassium imaging filter is developed and characterized. The imaging property of the ultra-thin potassium imaging cell is tested with a potassium seeded flame, yielding a resolution image of ˜ 20 lines per mm. The physics behind the atomic resonant fluorescent filter is radiation trapping. The diffusion process of the resonant photons trapped in the atomic vapor is theoretically described in this thesis. A Monte Carlo method is used to simulate the absorption and fluorescence. The optimum resolution of the fluorescent image is predicted by simulation. Radiation trapping is also shown to be useful for the generation of ultra-narrow linewidth light from an atomic vapor flash lamp. A 2 nanosecond, high voltage pulse is used to excite low pressure mercury vapor mixed with noble gases, producing high intensity emission at the mercury resonant line at 253.7 nm. With a nanosecond pumping time and high electrical current, the radiation intensity of the mercury discharge is increased significantly compared to a normal glow discharge lamp, while simultaneously suppressing the formation of an arc discharge. By avoiding the arc discharge, discrete spectral lines of mercury were kept at narrow bandwidth. Due to radiation trapping, the emission linewidth from the nanosecond mercury lamp decreases with time and produces ultra-narrow linewidth emission 100 ns after of the excitation, this linewidth is verified by absorption measurements through low pressure mercury absorption filter. The lamp is used along with mercury absorption filters for spectroscopic applications, including Filtered Rayleigh Scattering with different CO2 pressures and Raman scattering from methanol.

Fiber-distributed Ultra-wideband noise radar with steerable power spectrum and colorless base station.

PubMed

Zheng, Jianyu; Wang, Hui; Fu, Jianbin; Wei, Li; Pan, Shilong; Wang, Lixian; Liu, Jianguo; Zhu, Ninghua

2014-03-10

A fiber-distributed Ultra-wideband (UWB) noise radar was achieved, which consists of a chaotic UWB noise source based on optoelectronic oscillator (OEO), a fiber-distributed transmission link, a colorless base station (BS), and a cross-correlation processing module. Due to a polarization modulation based microwave photonic filter and an electrical UWB pass-band filter embedded in the feedback loop of the OEO, the power spectrum of chaotic UWB signal could be shaped and notch-filtered to avoid the spectrum-overlay-induced interference to the narrow band signals. Meanwhile, the wavelength-reusing could be implemented in the BS by means of the distributed polarization modulation-to-intensity modulation conversion. The experimental comparison for range finding was carried out as the chaotic UWB signal was notch-filtered at 5.2 GHz and 7.8 GHz or not. Measured results indicate that space resolution with cm-level could be realized after 3-km fiber transmission thanks to the excellent self-correlation property of the UWB noise signal provided by the OEO. The performance deterioration of the radar raised by the energy loss of the notch-filtered noise signal was negligible.

High pressure liquid chromatographic gradient mixer

DOEpatents

Daughton, Christian G.; Sakaji, Richard H.

1985-01-01

A gradient mixer which effects the continuous mixing of any two miscible solvents without excessive decay or dispersion of the resultant isocratic effluent or of a linear or exponential gradient. The two solvents are fed under low or high pressure by means of two high performance liquid chromatographic pumps. The mixer comprises a series of ultra-low dead volume stainless steel tubes and low dead volume chambers. The two solvent streams impinge head-on at high fluxes. This initial nonhomogeneous mixture is then passed through a chamber packed with spirally-wound wires which cause turbulent mixing thereby homogenizing the mixture with minimum "band-broadening".

High-pressure liquid chromatographic gradient mixer

DOEpatents

Daughton, C.G.; Sakaji, R.H.

1982-09-08

A gradient mixer effects the continuous mixing of any two miscible solvents without excessive decay or dispersion of the resultant isocratic effluent or of a linear or exponential gradient. The two solvents are fed under low or high pressure by means of two high performance liquid chromatographic pumps. The mixer comprises a series of ultra-low dead volume stainless steel tubes and low dead volume chambers. The two solvent streams impinge head-on at high fluxes. This initial nonhomogeneous mixture is then passed through a chamber packed with spirally-wound wires which cause turbulent mixing thereby homogenizing the mixture with minimum band-broadening.

Dual Etalon Cross Tilt Order Sorted Spectrometer (DECTOSS)

NASA Astrophysics Data System (ADS)

Kumer, John B.; Rairden, Richard L.; Mitchell, Keith E.; Roche, Aidan E.; Mergenthaler, John L.

2002-11-01

The Dual Etalon Cross Tilt Order Sorted Spectrometer (DECTOSS) uses relatively inexpensive off the shelf components in a small and simple package to provide ultra high spectral resolution over a limited spectral range. For example, the modest first try laboratory test setup DECTOSS we describe in this presentation achieves resolving power ~ 105 on a spectral range of about 1 nm centered near 760 nm. This ultra high spectral resolution facilitates some important atmospheric remote sensing applications including profiling cirrus and/or aerosol above bright reflective surfaces in the O2 A-band and the column measurements of CO and CO2 utilizing solar reflectance spectra. We show details of the how the use of ultra high spectral resolution in the O2 A-band improves the profiling of cirrus and aerosol. The DECTOSS utilizes a Narrow Band Spectral Filter (NBSF), a Low Resolution Etalon (LRE) and a High Resolution Etalon (HRE). Light passing through these elements is focused on to a 2 Dimensional Array Detector (2DAD). Off the shelf, solid etalons with airgap or solid spacer gap are used in this application. In its simplest application this setup utilizes a spatially uniform extended source so that spatial and spectral structure are not confused. In this presentation we'll show 2D spectral data obtained in a desktop test configuration, and in the first try laboratory test setup. These were obtained by illuminating a Lambertian screen with (1) monochromatic light, and (2) with atmospheric absorption spectra in the oxygen (O2) A-band. Extracting the 1D spectra from these data is a work in progress and we show preliminary results compared with (1) solar absorption data obtained with a large Echelle grating spectrometer, and (2) theoretical spectra. We point out areas for improvement in our laboratory test setup, and general improvements in spectral range and sensitivity that are planned for our next generation field test setup.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Influence of preparation design and ceramic thicknesses on fracture resistance and failure modes of premolar partial coverage restorations

PubMed Central

Guess, Petra C.; Schultheis, Stefan; Wolkewitz, Martin; Zhang; Strub, Joerg R.

2015-01-01

Statement of problem Preparation designs and ceramic thicknesses are key factors for the long-term success of minimally invasive premolar partial coverage restorations. However, only limited information is presently available on this topic. Purpose The aim of this in vitro study was to evaluate the fracture resistance and failure modes of ceramic premolar partial coverage restorations with different preparation designs and ceramic thicknesses. Material and methods Caries-free human premolars (n= 144) were divided into 9 groups. Palatal onlay preparation comprised reduction of the palatal cusp by 2 mm (Palatal-Onlay-Standard), 1 mm (Palatal-Onlay-Thin), or 0.5 mm (Palatal-Onlay-Ultra-Thin). Complete-coverage onlay preparation additionally included the buccal cusp (Occlusal-Onlay-Standard; Occlusal-Onlay-Thin; Occlusal-Onlay-Ultra-Thin). Labial surface preparations with chamfer reductions of 0.8 mm (Complete-Veneer-Standard), 0.6 mm (Complete-Veneer-Thin) and 0.4 mm (Complete-Veneer-Ultra-Thin) were implemented for complete veneer restorations. Restorations were fabricated from a pressable lithium-disilicate ceramic (IPS-e.max-Press) and cemented adhesively (Syntac-Classic/Variolink-II). All specimens were subjected to cyclic mechanical loading (F= 49 N, 1.2 million cycles) and simultaneous thermocycling (5°C to 55°C) in a mouth-motion simulator. After fatigue, restorations were exposed to single-load-to-failure. Two-way ANOVA was used to identify statistical differences. Pair-wise differences were calculated and P-values were adjusted by the Tukey–Kramer method (α= .05). Results All specimens survived fatigue. Mean (SD) load to failure values (N) were as follows: 837 (320/Palatal-Onlay-Standard), 1055 (369/Palatal-Onlay-Thin), 1192 (342/Palatal-Onlay-Ultra-Thin), 963 (405/Occlusal-Onlay-Standard), 1108 (340/Occlusal-Onlay-Thin), 997 (331/Occlusal-Onlay-Ultra-Thin), 1361 (333/Complete-Veneer-Standard), 1087 (251/Complete-Veneer-Thin), 883 (311/Complete-Veneer-Ultra-Thin). Palatal-onlay restorations revealed a significantly higher fracture resistance with ultra-thin thicknesses than with standard thicknesses (P=.015). Onlay restorations were not affected by thickness variations. Fracture loads of standard complete veneers were significantly higher than thin (P=.03) and ultra-thin (P<.001) restorations. Conclusions In this in vitro study, the reduction of preparation depth to 1.00 and 0.5 mm did not impair fracture resistance of pressable lithium-disilicate ceramic onlay restorations but resulted in lower failure loads in complete veneer restorations on premolars. PMID:24079561

Enhanced Ultra-Wideband (UWB) Circular Monopole Antenna with Electromagnetic Band Gap (EBG) Surface and Director

DTIC Science & Technology

2014-08-01

Enhanced Ultra-Wideband (UWB) Circular Monopole Antenna with Electromagnetic Band Gap (EBG) Surface and Director by Amir I Zaghloul, Youn M... Antenna with Electromagnetic Band Gap (EBG) Surface and Director Amir I Zaghloul, Youn M Lee, Gregory A Mitchell, and Theodore K Anthony...DATES COVERED (From - To) 4. TITLE AND SUBTITLE Enhanced Ultra-Wideband (UWB) Circular Monopole Antenna with Electromagnetic Band Gap (EBG

Low-cost ultra-thin broadband terahertz beam-splitter.

PubMed

Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

2012-02-27

A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

Ultra-thin whitetopping for general aviation airports in New Mexico.

DOT National Transportation Integrated Search

2002-06-01

Whitetopping is a pavement rehabilitation construction practice where portland cement concrete (PCC) is placed over an existing asphalt concrete pavement as an overlay. Ultra-thin whitetopping (UTW) is generally a thin overlay with a thickness betwee...

Ultra-Low-Cost Room Temperature SiC Thin Films

NASA Technical Reports Server (NTRS)

Faur, Maria

1997-01-01

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

DOE PAGES

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing; ...

2016-08-27

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

TRAPPIST-1 Planets - Flyaround Animation

NASA Image and Video Library

2017-02-22

This frame from a video depicts artist concepts of each of the seven planets orbiting TRAPPIST-1, an ultra-cool dwarf stars. Over 21 days, NASA's Spitzer Space Telescope measured the drop in light as each planet passed in front of the star. Spitzer was able to identify a total of seven rocky worlds, including three in the habitable zone where life is possible. The study established the planets' size, distance from their sun and, for some of them, their approximate mass and density. It also established that some, if not all, these planets are tidally locked, meaning one face of the planet permanently faces their sun. The planets appear in the order of innermost to outermost planets. These artist's concepts were designed as follows: TRAPPIST-1b, closest to the star, was modeled on Jupiter's moon Io, which has volcanic features due to strong gravitational tugs. TRAPPIST-1c is shown as a rocky, warm world with a small ice cap on the side that never faces the star. TRAPPSIT-1d is rocky and has water only in a thin band along the terminator, dividing the day side and night side. TRAPPIST-1e and TRAPPIST-1f are both shown covered in water, but with progressively larger ice caps on the night side. TRAPPIST-1g is portrayed with an atmosphere like Neptune's, although it is still a rocky world. The farthest planet, TRAPPIST-1h, is shown as covered in ice, similar to Jupiter's icy moon Europa. The background stars are what you would see if you were in the TRAPPIST-1 system. Orion passes behind the planets, recognizable but distorted from what we're familiar with, in addition to Taurus and Pleiades. A video is available at http://photojournal.jpl.nasa.gov/catalog/PIA21468

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Multi-band reflector antenna with double-ring element frequency selective subreflector

NASA Technical Reports Server (NTRS)

Wu, Te-Kao; Lee, S. W.

1993-01-01

Frequency selective subreflectors (FSS) are often employed in the reflector antenna system of a communication satellite or a deep space exploration vehicle for multi-frequency operations. In the past, FSS's have been designed for diplexing two frequency bands. For example, the Voyager FSS was designed to diplex S and X bands and the TDRSS FSS was designed to diplex S and Ku bands. Recently, NASA's CASSINI project requires an FSS to multiplex four frequency (S/X/Ku/Ka) bands. Theoretical analysis and experimental verifications are presented for a multi-band flat pannel FSS with double-ring elements. Both the exact formulation and the thin-ring approximation are described for analyzing and designing this multi-ring patch element FSS. It is found that the thin-ring approximation fails to predict the electrically wide ring element FSS's performance. A single screen double-ring element FSS is demonstrated for the tri-band system that reflects the X-band signal while transmitting through the S- and Ku-band signals. In addition, a double screen FSS with non-similar double-ring elements is presented for the Cassini's four-band system which reflects the X- and Ka-band signals while passing the S- and Ku-band signals. To accurately predict the FSS effects on a dual reflector antenna's radiation pattern, the FSS subreflector's transmitted/reflected field variation as functions of the polarization and incident angles with respect to the local coordinates was taken into account. An FSS transmission/reflection coefficient table is computed for TE and TM polarizations at various incident angles based on the planar FSS model. Next, the hybrid Geometric Optics (GO) and Physical Optics (PO) technique is implemented with linearly interpolating the FSS table to efficiently determine the FSS effects in a dual reflector antenna.

Design of a lock-amplifier circuit

NASA Astrophysics Data System (ADS)

Liu, H.; Huang, W. J.; Song, X.; Zhang, W. Y.; Sa, L. B.

2017-01-01

The lock-in amplifier is recovered by phase sensitive detection technique for the weak signal submerged in the noise background. This design is based on the TI ultra low power LM358, INA129, OPA227, OP07 and other chips as the core design and production of the lock-in amplifier. Signal generator by 10m ohms /1K ohm resistance points pressure network 10 mu V 1mV adjustable sine wave signal s (T). The concomitant interference signal together through the AC amplifier and band-pass filter signal x (T), on the other hand reference signal R (T) driven by square wave phase shift etc. steps to get the signal R (T), two signals and by phase sensitive detector are a DC full wave, again through its low pass filter and a DC amplifier to be measured signal more accurate detection, the final circuit through the AD conversion and the use of single-chip will display the output.

Ultra thin metallic coatings to control near field radiative heat transfer

NASA Astrophysics Data System (ADS)

Esquivel-Sirvent, R.

2016-09-01

We present a theoretical calculation of the changes in the near field radiative heat transfer between two surfaces due to the presence of ultra thin metallic coatings on semiconductors. Depending on the substrates, the radiative heat transfer is modulated by the thickness of the ultra thin film. In particular we consider gold thin films with thicknesses varying from 4 to 20 nm. The ultra-thin film has an insulator-conductor transition close to a critical thickness of dc = 6.4 nm and there is an increase in the near field spectral heat transfer just before the percolation transition. Depending on the substrates (Si or SiC) and the thickness of the metallic coatings we show how the near field heat transfer can be increased or decreased as a function of the metallic coating thickness. The calculations are based on available experimental data for the optical properties of ultrathin coatings.

Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

DTIC Science & Technology

2015-04-24

AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650...distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated

Pharmacognostic Screening of Piper trichostachyon Fruits and its Comparative Analysis with Piper nigrum Using Chromatographic Techniques

PubMed Central

Upadhya, Vinayak; Pai, Sandeep R.; Ankad, Gireesh M.; Hegde, Harsha V.

2016-01-01

Background: Piper trichostachyon is a wild, endemic Piper species from Western Ghats of India. The folklore healers of Belagavi region use this plant, similar to Piper nigrum. Aims: The present study investigates the comparison between P. nigrum and P. trichostachyon using pharmacognostic parameters. Materials and Methods: Pharmacognostic evaluation was carried out in terms of morphological, microscopic characters, and phytochemical analysis using standard methods. Comparative physicochemical analysis between P. trichostachyon and P. nigrum was also carried out through estimation of micro-macro nutrients, high-performance thin layer chromatography (HPTLC) investigation and using piperine as a marker compound for reversed phase-ultra flow liquid chromatographic (RP-UFLC) technique. Results: P. trichostachyon grows in the forests, and the fruits are morphologically similar to P. nigrum fruits, so the name in Kannada “Kaadu Kalu menasu” (wild/forest black pepper). The microscopy revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells, and yellowish brown pigment layer, parenchymatous cells. The presence of alkaloids, oil, and tannins were observed in P. trichostachyon fruits. The HPTLC studies visibly indicated differences among two species with 12 peaks and varied banding pattern. RP-UFLC results showed less amount of piperine in P. trichostachyon (0.05 ± 0.002 mg/g) than in P. nigrum (16.14 ± 0.807 mg/g). Conclusion: The study reports on pharmacognostic parameters of P. trichostachyon for the 1st time and will be useful for the identification and authentication. The comparative HPTLC and RP-UFLC studies resolve the differentiation impasse among two species. However, further biological efficacy studies are required to establish its use in traditional medicine. SUMMARY Piper trichostachyon grows in the forests, and the fruits are morphologically similar to Piper nigrum fruitsThe microscopy of P. trichostachyon revealed the presence of stone cells, starch grains, oil cells and globules, beaker cells and yellowish brown pigment layer, parenchymatous cellsThe high-performance thin layer chromatography studies visibly indicated differences among two species with varied banding patternReversed phase-ultra flow liquid chromatographic results showed less amount of piperine in P. trichostachyon than in P. nigrum. Abbreviation used: HPTLC: High Performance Thin Layer Chromatography, RP-UFLC: Reversed phase-ultra flow liquid chromatographic analysis, DST: Length of line, Maj: Length of large half axis for ellipse RDS - radius for circle, Rf: Retention Factor, TS: Transverse Section, TLC: Thin Layer Chromatography. PMID:27279700

Laser cutting of ultra-thin glasses based on a nonlinear laser interaction effect

NASA Astrophysics Data System (ADS)

Chen, Jian; Wu, Zhouling

2013-07-01

Glass panel substrates have been widely used in consumer electronics such as in flat panel TVs, laptops, and cell phones. With the advancement in the industry, the glass substrates are becoming thinner and stronger for reduced weight and volume, which brings great challenges for traditional mechanical processes in terms of cut quality, yield, and throughput. Laser glass cutting provides a non-contact process with minimum impact and superior quality compared to the mechanical counterparts. In this paper, we presented recent progresses in advanced laser processing of ultra-thin glass substrates, especially laser-cutting of ultra-thin glasses by a high power laser through a nonlinear interaction effect. Our results indicate that this technique has great potential of application for mass production of ultra-thin glass substrates.

First-principles simulation of the optical response of bulk and thin-film α-quartz irradiated with an ultrashort intense laser pulse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyung-Min; Min Kim, Chul; Moon Jeong, Tae, E-mail: jeongtm@gist.ac.kr

A computational method based on a first-principles multiscale simulation has been used for calculating the optical response and the ablation threshold of an optical material irradiated with an ultrashort intense laser pulse. The method employs Maxwell's equations to describe laser pulse propagation and time-dependent density functional theory to describe the generation of conduction band electrons in an optical medium. Optical properties, such as reflectance and absorption, were investigated for laser intensities in the range 10{sup 10} W/cm{sup 2} to 2 × 10{sup 15} W/cm{sup 2} based on the theory of generation and spatial distribution of the conduction band electrons. The method was applied tomore » investigate the changes in the optical reflectance of α-quartz bulk, half-wavelength thin-film, and quarter-wavelength thin-film and to estimate their ablation thresholds. Despite the adiabatic local density approximation used in calculating the exchange–correlation potential, the reflectance and the ablation threshold obtained from our method agree well with the previous theoretical and experimental results. The method can be applied to estimate the ablation thresholds for optical materials, in general. The ablation threshold data can be used to design ultra-broadband high-damage-threshold coating structures.« less

Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talochkin, A. B., E-mail: tal@isp.nsc.ru; Novosibirsk State University, Novosibirsk 630090; Chistokhin, I. B.

2016-04-07

Photoconductivity (PC) spectra of Si/Ge(GeSn)/Si structures with the ultra-thin (1.0–2.3 nm) Ge and GeSn alloy layers grown by the low-temperature (T = 100 °C) molecular beam epitaxy are studied. Photoresponse in the range of 1.2–0.4 eV related to light absorption in the buried Ge(GeSn) layer is observed. It is shown that in case of lateral PC, a simple diffusion model can be used to determine the absorption coefficient of this layer α ∼ 10{sup 5 }cm{sup −1}. This value is 100 times larger than that of a single Ge quantum dot layer and is reached significantly above the band gap of most bulk semiconductors. The observedmore » absorption is caused by optical transitions between electron and hole states localized at the interfaces. The anomalous high value of α can be explained by the unusual state of Ge(GeSn) layer with high concentration of dangling bonds, the optical properties of which have been predicted theoretically by Knief and von Niessen (Phys. Rev. B 59, 12940 (1999)).« less

Boltzmann transport properties of ultra thin-layer of h-CX monolayers

NASA Astrophysics Data System (ADS)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-04-01

Structural, electronic and thermoelectric properties of monolayer h-CX (X= Al, As, B, Bi, Ga, In, P, N, Sb and Tl) have been computed using density functional theory (DFT). The structural, electronic band structure, phonon dispersion curves and thermoelectric properties have been investigated. h-CGa and h-CTl show the periodically lattice vibrations and h-CB and h-CIn show small imaginary ZA frequencies. Thermoelectric properties are obtained using BoltzTrap code with the constant relaxation time (τ) approximation such as electronic, thermal and electrical conductivity calculated for various temperatures. The results indicate that h-CGa, h-CIn, h-CTl and h-CAl have direct band gaps with minimum electronic thermal and electrical conductivity while h-CB and h-CN show the high electronic thermal and electrical conductivity with highest cohesive energy.

Ultra-low-noise transition edge sensors for the SAFARI L-band on SPICA

NASA Astrophysics Data System (ADS)

Goldie, D. J.; Gao, J. R.; Glowacka, D. M.; Griffin, D. K.; Hijmering, R.; Khosropanah, P.; Jackson, B. D.; Mauskopf, P. D.; Morozov, D.; Murphy, J. A.; Ridder, M.; Trappe, N.; O'Sullivan, C.; Withington, S.

2012-09-01

The Far-Infrared Fourier transform spectrometer instrument SAFARI-SPICA which will operate with cooled optics in a low-background space environment requires ultra-sensitive detector arrays with high optical coupling efficiencies over extremely wide bandwidths. In earlier papers we described the design, fabrication and performance of ultra-low-noise Transition Edge Sensors (TESs) operated close to 100mk having dark Noise Equivalent Powers (NEPs) of order 4 × 10-19W/√Hz close to the phonon noise limit and an improvement of two orders of magnitude over TESs for ground-based applications. Here we describe the design, fabrication and testing of 388-element arrays of MoAu TESs integrated with far-infrared absorbers and optical coupling structures in a geometry appropriate for the SAFARI L-band (110 - 210 μm). The measured performance shows intrinsic response time τ ~ 11ms and saturation powers of order 10 fW, and a dark noise equivalent powers of order 7 × 10-19W/√Hz. The 100 × 100μm2 MoAu TESs have transition temperatures of order 110mK and are coupled to 320×320μm2 thin-film β-phase Ta absorbers to provide impedance matching to the incoming fields. We describe results of dark tests (i.e without optical power) to determine intrinsic pixel characteristics and their uniformity, and measurements of the optical performance of representative pixels operated with flat back-shorts coupled to pyramidal horn arrays. The measured and modeled optical efficiency is dominated by the 95Ω sheet resistance of the Ta absorbers, indicating a clear route to achieve the required performance in these ultra-sensitive detectors.

Ultra-wideband design of waveguide magneto-optical isolator operating in 1.31mum and 1.55mum band.

PubMed

Shoji, Yuya; Mizumoto, Tetsuya

2007-01-22

The design of an ultra-wideband waveguide magneto-optical isolator is described. The isolator is based on a Mach-Zehnder interferometer employing nonreciprocal phase shift. The ultra-wideband design is realized by adjusting the wavelength dependence of reciprocal phase difference to compensate for that of nonreciprocal phase difference in the backward direction. We obtained the ultra-wideband design that provides isolation > 35dB from 1.25mum to >1.65mum. This is the proposal of magneto-optical isolator that operates both in 1.31mum band and 1.55mum band.

Graphitic nanofilms of zinc-blende materials: ab initio calculations

NASA Astrophysics Data System (ADS)

Hu, San-Lue; Zhao, Li; Li, Yan-Li

2017-12-01

Ab initio calculations on ultra-thin nanofilms of 25 kinds of zinc-blende semiconductors demonstrate their stable geometry structures growth along (1 1 1) surface. Our results show that the (1 1 1) surfaces of 9 kinds of zinc-blende semiconductors can transform into a stable graphitelike structure within a certain thickness. The tensile strain effect on the thickness of graphitic films is not obvious. The band gaps of stable graphitic films can be tuned over a wide range by epitaxial tensile strain, which is important for applications in microelectronic devices, solar cells and light-emitting diodes.

Method of forming ultra thin film devices by vacuum arc vapor deposition

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, J.C.; Benson, D.K.; Tracy, C.E.

1996-03-26

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld. 5 figs.

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

1996-01-01

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld.

Monte Carlo Simulations of the Photospheric Emission in Gamma-Ray Bursts

NASA Astrophysics Data System (ADS)

Bégué, D.; Siutsou, I. A.; Vereshchagin, G. V.

2013-04-01

We studied the decoupling of photons from ultra-relativistic spherically symmetric outflows expanding with constant velocity by means of Monte Carlo simulations. For outflows with finite widths we confirm the existence of two regimes: photon-thick and photon-thin, introduced recently by Ruffini et al. (RSV). The probability density function of the last scattering of photons is shown to be very different in these two cases. We also obtained spectra as well as light curves. In the photon-thick case, the time-integrated spectrum is much broader than the Planck function and its shape is well described by the fuzzy photosphere approximation introduced by RSV. In the photon-thin case, we confirm the crucial role of photon diffusion, hence the probability density of decoupling has a maximum near the diffusion radius well below the photosphere. The time-integrated spectrum of the photon-thin case has a Band shape that is produced when the outflow is optically thick and its peak is formed at the diffusion radius.

MONTE CARLO SIMULATIONS OF THE PHOTOSPHERIC EMISSION IN GAMMA-RAY BURSTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Begue, D.; Siutsou, I. A.; Vereshchagin, G. V.

2013-04-20

We studied the decoupling of photons from ultra-relativistic spherically symmetric outflows expanding with constant velocity by means of Monte Carlo simulations. For outflows with finite widths we confirm the existence of two regimes: photon-thick and photon-thin, introduced recently by Ruffini et al. (RSV). The probability density function of the last scattering of photons is shown to be very different in these two cases. We also obtained spectra as well as light curves. In the photon-thick case, the time-integrated spectrum is much broader than the Planck function and its shape is well described by the fuzzy photosphere approximation introduced by RSV.more » In the photon-thin case, we confirm the crucial role of photon diffusion, hence the probability density of decoupling has a maximum near the diffusion radius well below the photosphere. The time-integrated spectrum of the photon-thin case has a Band shape that is produced when the outflow is optically thick and its peak is formed at the diffusion radius.« less

Ultra-thin plasma panel radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Peter S.

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Broadband asymmetric transmission of linearly polarized electromagnetic waves based on chiral metamaterial

NASA Astrophysics Data System (ADS)

Stephen, Lincy; Yogesh, N.; Subramanian, V.

2018-01-01

The giant optical activity of chiral metamaterials (CMMs) holds great potential for tailoring the polarization state of an electromagnetic (EM) wave. In controlling the polarization state, the aspect of asymmetric transmission (AT), where a medium allows the EM radiation to pass through in one direction while restricting it in the opposite direction, adds additional degrees of freedom such as one-way channelling functionality. In this work, a CMM formed by a pair of mutually twisted slanted complementary metal strips is realized for broadband AT accompanied with cross-polarization (CP) conversion for linearly polarized EM waves. Numerically, the proposed ultra-thin (˜λ/42) CMM shows broadband AT from 8.58 GHz to 9.73 GHz (bandwidth of 1.15 GHz) accompanied with CP transmission magnitude greater than 0.9. The transmission and reflection spectra reveal the origin of the asymmetric transmission as the direction sensitive cross polarization conversion and anisotropic electric coupling occurring in the structure which is then elaborated with the surface current analysis and electric field distribution within the structure. An experiment is carried out to verify the broadband AT based CP conversion of the proposed CMM at microwave frequencies, and a reliable agreement between numerical and experimental results is obtained. Being ultra-thin, the reported broadband AT based CP conversion of the proposed CMM is useful for controlling radiation patterns in non-reciprocal EM devices and communication networks.

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

PubMed Central

Nazirzadeh, Mohammad Amin; Atar, Fatih Bilge; Turgut, Berk Berkan; Okyay, Ali Kemal

2014-01-01

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high as 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use of Au nanoislands on Silicon surface formed by rapid thermal annealing of a thin Au layer. Surface plasmons are excited on Au nanoislands and this field localization results in efficient absorption of sub-bandgap photons. Absorbed photons excite the electrons of the metal to higher energy levels (hot electron generation) and the collection of these hot electrons to the semiconductor results in photocurrent (internal photoemission). Simple and scalable fabrication makes these devices suitable for ultra-low-cost NIR detection applications. PMID:25407509

Thin film solar cell design based on photonic crystal and diffractive grating structures.

PubMed

Mutitu, James G; Shi, Shouyuan; Chen, Caihua; Creazzo, Timothy; Barnett, Allen; Honsberg, Christiana; Prather, Dennis W

2008-09-15

In this paper we present novel light trapping designs applied to multiple junction thin film solar cells. The new designs incorporate one dimensional photonic crystals as band pass filters that reflect short light wavelengths (400 - 867 nm) and transmit longer wavelengths(867 -1800 nm) at the interface between two adjacent cells. In addition, nano structured diffractive gratings that cut into the photonic crystal layers are incorporated to redirect incoming waves and hence increase the optical path length of light within the solar cells. Two designs based on the nano structured gratings that have been realized using the scattering matrix and particle swarm optimization methods are presented. We also show preliminary fabrication results of the proposed devices.

Tunable thin-film optical filters for hyperspectral microscopy

NASA Astrophysics Data System (ADS)

Favreau, Peter F.; Rich, Thomas C.; Prabhat, Prashant; Leavesley, Silas J.

2013-02-01

Hyperspectral imaging was originally developed for use in remote sensing applications. More recently, it has been applied to biological imaging systems, such as fluorescence microscopes. The ability to distinguish molecules based on spectral differences has been especially advantageous for identifying fluorophores in highly autofluorescent tissues. A key component of hyperspectral imaging systems is wavelength filtering. Each filtering technology used for hyperspectral imaging has corresponding advantages and disadvantages. Recently, a new optical filtering technology has been developed that uses multi-layered thin-film optical filters that can be rotated, with respect to incident light, to control the center wavelength of the pass-band. Compared to the majority of tunable filter technologies, these filters have superior optical performance including greater than 90% transmission, steep spectral edges and high out-of-band blocking. Hence, tunable thin-film optical filters present optical characteristics that may make them well-suited for many biological spectral imaging applications. An array of tunable thin-film filters was implemented on an inverted fluorescence microscope (TE 2000, Nikon Instruments) to cover the full visible wavelength range. Images of a previously published model, GFP-expressing endothelial cells in the lung, were acquired using a charge-coupled device camera (Rolera EM-C2, Q-Imaging). This model sample presents fluorescently-labeled cells in a highly autofluorescent environment. Linear unmixing of hyperspectral images indicates that thin-film tunable filters provide equivalent spectral discrimination to our previous acousto-optic tunable filter-based approach, with increased signal-to-noise characteristics. Hence, tunable multi-layered thin film optical filters may provide greatly improved spectral filtering characteristics and therefore enable wider acceptance of hyperspectral widefield microscopy.

Properties of zinc tin oxide thin film by aerosol assisted chemical vapor deposition (AACVD)

NASA Astrophysics Data System (ADS)

Riza, Muhammad Arif; Rahman, Abu Bakar Abd; Sepeai, Suhaila; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib

2018-05-01

This study focuses on the properties of ZTO which have been deposited by a low-cost method namely aerosol assisted chemical vapor deposition (AACVD). The precursors used in this method were zinc acetate dihidrate and tin chloride dihydrate for ZTO thin film deposition. Both precursors were mixed and stirred until fully dissolved before deposition. The ZTO was deposited on borosilicate glass substrate for the investigation of optical properties. The films deposited have passed the scotch tape adherence test. XRD revealed that the crystal ZTO is slightly in the form of perovskite structure but several deteriorations were also seen in the spectrum. The UV-Vis analysis showed high transmittance of ˜85% and the band gap was calculated to be 3.85 eV. The average thickness of the film is around 284 nm. The results showed that the ZTO thin films have been successfully deposited by the utilization of AACVD method.

Structural performance of ultra-thin whitetopping on Illinois roadways and parking lots.

DOT National Transportation Integrated Search

2014-08-01

A performance evaluation of ultra-thin whitetopping (UTW) pavements in Illinois was undertaken in 20122014 : to evaluate current design procedures and to determine design life criteria for future projects. The two main : components of this evaluat...

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

DOEpatents

Werner, T.R.; Falco, C.M.; Schuller, I.K.

1982-08-31

A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

On sampling band-pass signals

NASA Technical Reports Server (NTRS)

Sadr, R.; Shahshahani, M.

1989-01-01

Four techniques for uniform sampling of band-bass signals are examined. The in-phase and quadrature components of the band-pass signal are computed in terms of the samples of the original band-pass signal. The relative implementation merits of these techniques are discussed with reference to the Deep Space Network (DSN).

Lipid and glycolipid isomer analyses using ultra-high resolution ion mobility spectrometry separations

DOE PAGES

Wojcik, Roza; Webb, Ian K.; Deng, Liulin; ...

2017-01-18

Understanding the biological mechanisms related to lipids and glycolipids is challenging due to the vast number of possible isomers. Mass spectrometry (MS) measurements are currently the dominant approach for studying and providing detailed information on lipid and glycolipid structures. However, difficulties in distinguishing many structural isomers (e.g. distinct acyl chain positions, double bond locations, as well as glycan isomers) inhibit the understanding of their biological roles. Here we utilized ultra-high resolution ion mobility spectrometry (IMS) separations based upon the use of traveling waves in a serpentine long path length multi-pass Structures for Lossless Manipulations (SLIM) to enhance isomer resolution. Themore » multi-pass arrangement allowed separations ranging from ~16 m (1 pass) to ~470 m (32 passes) to be investigated for the distinction of lipids and glycolipids with extremely small structural differences. Lastly, these ultra-high resolution SLIM IMS-MS analyses provide a foundation for exploring and better understanding isomer specific biological and disease processes.« less

Aerosol-assisted chemical vapor deposition of ultra-thin CuOx films as hole transport material for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Zhixin; Chen, Shuqun; Li, Pingping; Li, Hongyi; Wu, Junshu; Hu, Peng; Wang, Jinshu

This paper reports on the fabrication of CuOx films to be used as hole transporting layer (HTL) in CH3NH3PbI3 perovskite solar cells (PSCs). Ultra-thin CuOx coatings were grown onto FTO substrates for the first time via aerosol-assisted chemical vapor deposition (AACVD) of copper acetylacetonate in methanol. After incorporating into the PSCs prepared at ambient air, a highest power conversion efficiency (PCE) of 8.26% with HTL and of 3.34% without HTL were achieved. Our work represents an important step in the development of low-cost CVD technique for fabricating ultra-thin metal oxide functional layers in thin film photovoltaics.

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

NASA Astrophysics Data System (ADS)

Heidari, Hadi; Wacker, Nicoleta; Dahiya, Ravinder

2017-09-01

Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

Ultra-wide acoustic band gaps in pillar-based phononic crystal strips

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coffy, Etienne, E-mail: etienne.coffy@femto-st.fr; Lavergne, Thomas; Addouche, Mahmoud

2015-12-07

An original approach for designing a one dimensional phononic crystal strip with an ultra-wide band gap is presented. The strip consists of periodic pillars erected on a tailored beam, enabling the generation of a band gap that is due to both Bragg scattering and local resonances. The optimized combination of both effects results in the lowering and the widening of the main band gap, ultimately leading to a gap-to-midgap ratio of 138%. The design method used to improve the band gap width is based on the flattening of phononic bands and relies on the study of the modal energy distributionmore » within the unit cell. The computed transmission through a finite number of periods corroborates the dispersion diagram. The strong attenuation, in excess of 150 dB for only five periods, highlights the interest of such ultra-wide band gap phononic crystal strips.« less

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Multi-stage phononic crystal structure for anchor-loss reduction of thin-film piezoelectric-on-silicon microelectromechanical-system resonator

NASA Astrophysics Data System (ADS)

Bao, Fei-Hong; Bao, Lei-Lei; Li, Xin-Yi; Ammar Khan, Muhammad; Wu, Hua-Ye; Qin, Feng; Zhang, Ting; Zhang, Yi; Bao, Jing-Fu; Zhang, Xiao-Sheng

2018-06-01

Thin-film piezoelectric-on-silicon acoustic wave resonators are promising for the development of system-on-chip integrated circuits with micro/nano-engineered timing reference. However, in order to realize their large potentials, a further enhancement of the quality factor (Q) is required. In this study, a novel approach, based on a multi-stage phononic crystal (PnC) structure, was proposed to achieve an ultra-high Q. A systematical study revealed that the multi-stage PnC structure formed a frequency-selective band-gap to effectively prohibit the dissipation of acoustic waves through tethers, which significantly reduced the anchor loss, leading to an insertion-loss reduction and enhancement of Q. The maximum unloaded Q u of the fabricated resonators reached the value of ∼10,000 at 109.85 MHz, indicating an enhancement by 19.4 times.

Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinyanjui, M. K., E-mail: michael.kinyanjui@uni-ulm.de; Kaiser, U.; Benner, G.

2015-05-18

We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presentedmore » approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.« less

Ultra-thin, light-trapping silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

1989-01-01

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

NASA Astrophysics Data System (ADS)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Ultra-thin carbon-fiber paper fabrication and carbon-fiber distribution homogeneity evaluation method

NASA Astrophysics Data System (ADS)

Zhang, L. F.; Chen, D. Y.; Wang, Q.; Li, H.; Zhao, Z. G.

2018-01-01

A preparation technology of ultra-thin Carbon-fiber paper is reported. Carbon fiber distribution homogeneity has a great influence on the properties of ultra-thin Carbon-fiber paper. In this paper, a self-developed homogeneity analysis system is introduced to assist users to evaluate the distribution homogeneity of Carbon fiber among two or more two-value images of carbon-fiber paper. A relative-uniformity factor W/H is introduced. The experimental results show that the smaller the W/H factor, the higher uniformity of the distribution of Carbon fiber is. The new uniformity-evaluation method provides a practical and reliable tool for analyzing homogeneity of materials.

Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Chenggong; Wang, Congcong; Kauppi, John

2015-08-28

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

A programmable ultra-low noise X-band exciter.

PubMed

MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

2001-07-01

A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

Metasurface Salisbury screen: achieving ultra-wideband microwave absorption.

PubMed

Zhou, Ziheng; Chen, Ke; Zhao, Junming; Chen, Ping; Jiang, Tian; Zhu, Bo; Feng, Yijun; Li, Yue

2017-11-27

The metasurfaces have recently been demonstrated to provide full control of the phase responses of electromagnetic (EM) wave scattering over subwavelength scales, enabling a wide range of practical applications. Here, we propose a comprehensive scheme for the efficient and flexible design of metasurface Salisbury screen (MSS) capable of absorbing the impinging EM wave in an ultra-wide frequency band. We show that properly designed reflective metasurface can be used to substitute the metallic ground of conventional Salisbury screen for generating diverse resonances in a desirable way, thus providing large controllability over the absorption bandwidth. Based on this concept, we establish an equivalent circuit model to qualitatively analysis the resonances in MSS and design algorithms to optimize the overall performance of the MSS. Experiments have been carried out to demonstrate that the absorption bandwidth from 6 GHz to 30 GHz with an efficiency higher than 85% can be achieved by the proposal, which is apparently much larger than that of conventional Salisbury screen (7 GHz - 17 GHz). The proposed concept of MSS could offer opportunities for flexibly designing thin electromagnetic absorbers with simultaneously ultra-wide bandwidth, polarization insensitivity, and wide incident angle, exhibiting promising potentials for many applications such as in EM compatibility, stealth technique, etc.

Flexible metasurface black nickel with stepped nanopillars.

PubMed

Qian, Qinyu; Yan, Ying; Wang, Chinhua

2018-03-15

We report on a monolithic, all-metallic, and flexible metasurface perfect absorber [black nickel (Ni)] based on coupled Mie resonances originated from vertically stepped Ni nanopillars homoepitaxially grown on an Ni substrate. Coupled Mie resonances are generated from Ni nanopillars with different sizes such that Mie resonances of the stepped two sets of Ni nanopillars occur complementarily at different wavelengths to realize polarization-independent broadband absorption over the entire visible wavelength band (400-760 nm) within an ultra-thin surface layer of only 162 nm thick in total. Two-step double-beam interference lithography and electroplating are utilized to fabricate the proposed monolithic metasurface that can be arbitrarily bent and pressed. A black nickel metasurface is experimentally demonstrated in which an average polarization-independent absorption of 0.972 (0.961, experiment) in the entire visible band is achieved and remains 0.838 (0.815, experiment) when the incident angle increases to 70°.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Dielectric-based subwavelength metallic meanders for wide-angle band absorbers.

PubMed

Shen, Su; Qiao, Wen; Ye, Yan; Zhou, Yun; Chen, Linsen

2015-01-26

We propose nano-meanders that can achieve wide-angle band absorption in visible regime. The nano-meander consists of a subwavelength dielectric grating covered by continuous ultra-thin Aluminum film (less than one tenth of the incident wavelength). The excited photonic resonant modes, such as cavity mode, surface plasmonic mode and Rayleigh-Wood anomaly, are discussed in detail. Nearly total resonant absorption due to funneling mechanism in the air nano-groove is almost invariant with large incident angle in transverse magnetic polarization. From both the structural geometry and the nanofabrication point of view, the light absorber has a very simple geometrical structure and it is easy to be integrated into complex photonic devices. The highly efficient angle-robust light absorber can be potential candidate for a range of passive and active photonic applications, including solar-energy harvesting as well as producing artificial colors on a large scale substrate.

Development and ultra-structure of an ultra-thin silicone epidermis of bioengineered alternative tissue.

PubMed

Wessels, Quenton; Pretorius, Etheresia

2015-08-01

Burn wound care today has a primary objective of temporary or permanent wound closure. Commercially available engineered alternative tissues have become a valuable adjunct to the treatment of burn injuries. Their constituents can be biological, alloplastic or a combination of both. Here the authors describe the aspects of the development of a siloxane epidermis for a collagen-glycosaminoglycan and for nylon-based artificial skin replacement products. A method to fabricate an ultra-thin epidermal equivalent is described. Pores, to allow the escape of wound exudate, were punched and a tri-filament nylon mesh or collagen scaffold was imbedded and silicone polymerisation followed at 120°C for 5 minutes. The ultra-structure of these bilaminates was assessed through scanning electron microscopy. An ultra-thin biomedical grade siloxane film was reliably created through precision coating on a pre-treated polyethylene terephthalate carrier. © 2013 The Authors. International Wound Journal © 2013 Medicalhelplines.com Inc and John Wiley & Sons Ltd.

Drop-in compatible entanglement for optical-fiber networks.

PubMed

Hall, Matthew A; Altepeter, Joseph B; Kumar, Prem

2009-08-17

A growing number of quantum communication protocols require entanglement distribution among remote parties, which is best accomplished by exploiting the mature technology and extensive infrastructure of low-loss optical fiber. For this reason, a practical source of entangled photons must be drop-in compatible with optical fiber networks. Here we demonstrate such a source for the first time, in which the nonlinearity of standard single-mode fiber is utilized to yield entangled photon pairs in the 1310-nm O-band. Using an ultra-stable design, we produce polarization entanglement with 98.0% +/- 0.5% fidelity to a maximally entangled state as characterized via coincidence-basis tomography. To demonstrate the source's drop-in capability, we transmit one photon from each entangled pair through a telecommunications-grade optical amplifier set to boost classical 1550-nm (C-band) communication signals. We verify that the photon pairs experience no measurable decoherence upon passing through the active amplifier (the output state's fidelity with a maximally entangled state is 98.4% +/- 1.4%). (c) 2009 Optical Society of America

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

Study on Structural and Dielectric Properties of Ultra-Low-Fire Integratable Dielectric Film for High-Frequency and Microwave Application

NASA Astrophysics Data System (ADS)

Qu, Sheng; Zhang, Jihua; Wu, Kaituo; Wang, Lei; Chen, Hongwei

2018-03-01

In this study, ultra-low-fire ceramic composites of Zn2Te3O8-30 wt.%TiTe3O8 (ZTT) were prepared by a solid-state reaction method. Densified at 600°C, the best microwave dielectric properties at 8.5 GHz were measured with the ɛ r , tan δ, Q × f, and τ f as 25.6, 1.5 × 10-4, 56191 GHz and 1.66 ppm/°C, respectively. Thin films of ultra-low-fire ZTT were prepared by a radio-frequency magnetron sputtering method. ZTT films which deposited on Au/NiCr/SiO2/Si (100) substrates at 200°C showed good adhesion. From ultra-low-fire ceramic to ultra-low-fire ZTT thin films, the latter maintained all the good high-frequency dielectric properties of the former: high dielectric constant ( ɛ r ˜ 25) and low dissipation factor (tan δ < 5×10-3), low leakage current density (˜ 10-9 A/cm2) and ultra low processing temperature. These excellent properties of the ultra-low-fire ZTT thin film make it possible to be integrated in MMIC and be applied in the research of GaN and GaAs MOSFET devices.

Impacts of oil spills on altimeter waveforms and radar backscatter cross section

NASA Astrophysics Data System (ADS)

Cheng, Yongcun; Tournadre, Jean; Li, Xiaofeng; Xu, Qing; Chapron, Bertrand

2017-05-01

Ocean surface films can damp short capillary-gravity waves, reduce the surface mean square slope, and induce "sigma0 blooms" in satellite altimeter data. No study has ascertained the effect of such film on altimeter measurements due to lack of film data. The availability of Environmental Response Management Application (ERMA) oil cover, daily oil spill extent, and thickness data acquired during the Deepwater Horizon (DWH) oil spill accident provides a unique opportunity to evaluate the impact of surface film on altimeter data. In this study, the Jason-1/2 passes nearest to the DWH platform are analyzed to understand the waveform distortion caused by the spill as well as the variation of σ0 as a function of oil thickness, wind speed, and radar band. Jason-1/2 Ku-band σ0 increased by 10 dB at low wind speed (<3 m s-1) in the oil-covered area. The mean σ0 in Ku and C bands increased by 1.0-3.5 dB for thick oil and 0.9-2.9 dB for thin oil while the waveforms are strongly distorted. As the wind increases up to 6 m s-1, the mean σ0 bloom and waveform distortion in both Ku and C bands weakened for both thick and thin oil. When wind exceeds 6 m s-1, only does the σ0 in Ku band slightly increase by 0.2-0.5 dB for thick oil. The study shows that high-resolution altimeter data can certainly help better evaluate the thickness of oil spill, particularly at low wind speeds.

Low-Noise Band-Pass Amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1982-01-01

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Microgravity

NASA Image and Video Library

1999-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Microgravity

NASA Image and Video Library

2000-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Ultra-thin smart acoustic metasurface for low-frequency sound insulation

NASA Astrophysics Data System (ADS)

Zhang, Hao; Xiao, Yong; Wen, Jihong; Yu, Dianlong; Wen, Xisen

2016-04-01

Insulating low-frequency sound is a conventional challenge due to the high areal mass required by mass law. In this letter, we propose a smart acoustic metasurface consisting of an ultra-thin aluminum foil bonded with piezoelectric resonators. Numerical and experimental results show that the metasurface can break the conventional mass law of sound insulation by 30 dB in the low frequency regime (<1000 Hz), with an ultra-light areal mass density (<1.6 kg/m2) and an ultra-thin thickness (1000 times smaller than the operating wavelength). The underlying physical mechanism of such extraordinary sound insulation performance is attributed to the infinite effective dynamic mass density produced by the smart resonators. It is also demonstrated that the excellent sound insulation property can be conveniently tuned by simply adjusting the external circuits instead of modifying the structure of the metasurface.

The impact of nitrogen doping and reduced-niobium self-doping on the photocatalytic activity of ultra-thin Nb 3 O 8 - nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yannan; Wen, Ting; Kong, Weiqian

Ultra-thin [Nb 3O 8] -nanosheets with N doping, reduced-Nb doping and N/reduced-Nb codoping were fabricated by combining chemically controlled syntheses and liquid exfoliation, which enable comparative studies on the doping effect for photocatalytic H 2evolution.

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Tunable plasmonic dual wavelength multi/demultiplexer based on graphene sheets and cylindrical resonator

NASA Astrophysics Data System (ADS)

Asgari, Somayyeh; Granpayeh, Nosrat

2017-06-01

Two parallel graphene sheet waveguides and a graphene cylindrical resonator between them is proposed, analyzed, and simulated numerically by using the finite-difference time-domain method. One end of each graphene waveguide is the input and output port. The resonance and the prominent mid-infrared band-pass filtering effect are achieved. The transmittance spectrum is tuned by varying the radius of the graphene cylindrical resonator, the dielectric inside it, and also the chemical potential of graphene utilizing gate voltage. Simulation results are in good agreement with theoretical calculations. As an application, a multi/demultiplexer is proposed and analyzed. Our studies demonstrate that graphene based ultra-compact, nano-scale devices can be designed for optical processing and photonic integrated devices.

An application of PSO algorithm for multi-criteria geometry optimization of printed low-pass filters based on conductive periodic structures

NASA Astrophysics Data System (ADS)

Steckiewicz, Adam; Butrylo, Boguslaw

2017-08-01

In this paper we discussed the results of a multi-criteria optimization scheme as well as numerical calculations of periodic conductive structures with selected geometry. Thin printed structures embedded on a flexible dielectric substrate may be applied as simple, cheap, passive low-pass filters with an adjustable cutoff frequency in low (up to 1 MHz) radio frequency range. The analysis of an electromagnetic phenomena in presented structures was realized on the basis of a three-dimensional numerical model of three proposed geometries of periodic elements. The finite element method (FEM) was used to obtain a solution of an electromagnetic harmonic field. Equivalent lumped electrical parameters of printed cells obtained in such manner determine the shape of an amplitude transmission characteristic of a low-pass filter. A nonlinear influence of a printed cell geometry on equivalent parameters of cells electric model, makes it difficult to find the desired optimal solution. Therefore an optimization problem of optimal cell geometry estimation with regard to an approximation of the determined amplitude transmission characteristic with an adjusted cutoff frequency, was obtained by the particle swarm optimization (PSO) algorithm. A dynamically suitable inertia factor was also introduced into the algorithm to improve a convergence to a global extremity of a multimodal objective function. Numerical results as well as PSO simulation results were characterized in terms of approximation accuracy of predefined amplitude characteristics in a pass-band, stop-band and cutoff frequency. Three geometries of varying degrees of complexity were considered and their use in signal processing systems was evaluated.

Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

NASA Astrophysics Data System (ADS)

Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

2017-11-01

In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

Wideband monolithically integrated front-end subsystems and components

NASA Astrophysics Data System (ADS)

Mruk, Joseph Rene

This thesis presents the analysis, design, and measurements of passive, monolithically integrated, wideband recta-coax and printed circuit board front-end components. Monolithic fabrication of antennas, impedance transformers, filters, and transitions lowers manufacturing costs by reducing assembly time and enhances performance by removing connectors and cabling between the devices. Computational design, fabrication, and measurements are used to demonstrate the capabilities of these front-end assemblies. Two-arm wideband planar log-periodic antennas fed using a horizontal feed that allows for filters and impedance transformers to be readily fabricated within the radiating region of the antenna are demonstrated. At microwave frequencies, low-cost printed circuit board processes are typically used to produce planar devices. A 1.8 to 11 GHz two-arm planar log-periodic antenna is designed with a monolithically integrated impedance transformer. Band rejection methods based on modifying the antenna aperture, use of an integrated filter, and the application of both methods are investigated with realized gain suppressions of over 25 dB achieved. The ability of standard circuit board technology to fabricate millimeter-wave devices up to 110 GHz is severely limited. Thin dielectrics are required to prevent the excitation of higher order modes in the microstrip substrate. Fabricating the thin line widths required for the antenna aperture also becomes prohibitively challenging. Surface micro-machining typically used in the fabrication of MEMS devices is capable of producing the extremely small features that can be used to fabricate antennas extending through W-band. A directly RF fed 18 to 110 GHz planar log-periodic antenna is developed. The antenna is fabricated with an integrated impedance transformer and additional transitions for measurement characterization. Singly terminated low-loss wideband millimeter-wave filters operating over V- and W- band are developed. High quality performance of an 18 to 100 GHz front-end is realized by dividing the single instantaneous antenna into two apertures operating from 18 to 50 and 50 to 100 GHz. Each channel features an impedance transformer, low-pass (low-frequency) or band-pass (high-frequency) filter, and grounded CPW launch. This dual-aperture front-end demonstrates that micromachining technology is now capable of fabricating broadband millimeter-wave components with a high degree of integration.

Measurements on wireless transmission of ECG signals

NASA Astrophysics Data System (ADS)

Gabrielli, A.; Lax, I.

2016-12-01

The scope of this research is to design an electronic prototype, an operative system as a proof of concept, to transmit and receive biological parameters, in particular electrocardiogram signals, through dedicated wireless circuits. The apparatus features microelectronics chips that were developed for more general biomedical applications, here adapted to deal with cardiac signals. The paper mainly focuses on the electronic aspects, as in this study we do not face medical or clinical aspects of the system. The transmitter circuit uses a commercial instrumentation amplifier and the receiver has been equipped with wide-band amplifiers along with made-in-the-lab band-pass filters centered at the carrier. We have been able to mount the entire system prototype into a preliminary data acquisition chain that reads out the electrocardiogram signal. The prototype allows acquiring the waveform, converting it to a digital pattern and open the transmission through a series of high-frequency packets exploiting the Ultra Wide Band protocol. The sensor value is embedded in the transmission through the rate of the digital packets. In fact, these are sent wireless at a specific packet-frequency that depends on the sensor amplitude and are detected into a receiver circuit that recovers the information.

Enhanced Aluminum Reflecting and Solar-Blind Filter Coatings for the Far-Ultraviolet

NASA Technical Reports Server (NTRS)

Del Hoyo, Javier; Quijada, Manuel

2017-01-01

The advancement of far-ultraviolet (FUV) coatings is essential to meet the specified throughput requirements of the Large UV/Optical/IR (LUVOIR) Surveyor Observatory which will cover wavelengths down to the 100 nm range. The biggest constraint in the optical thin film coating design is attenuation in the Lyman-Alpha Ultraviolet range of 100-130 nm in which conventionally deposited thin film materials used in this spectral region (e.g. aluminum [Al] protected with Magnesium fluoride [MgF2]) often have high absorption and scatter properties degrading the throughput in an optical system. We investigate the use of optimally deposited aluminum and aluminum tri-fluoride (AlF3) materials for reflecting and solar blind band-pass filter coatings for use in the FUV. Optical characterization of the deposited designs has been performed using UV spectrometry. The optical thin film design and optimal deposition conditions to produce superior reflectance and transmittance using Al and AlF3 are presented.

Enhanced aluminum reflecting and solar-blind filter coatings for the far-ultraviolet

NASA Astrophysics Data System (ADS)

Del Hoyo, Javier; Quijada, Manuel

2017-09-01

The advancement of far-ultraviolet (FUV) coatings is essential to meet the specified throughput requirements of the Large UV/Optical/IR (LUVOIR) Surveyor Observatory which will cover wavelengths down to the 100 nm range. The biggest constraint in the optical thin film coating design is attenuation in the Lyman-Alpha Ultraviolet range of 100-130 nm in which conventionally deposited thin film materials used in this spectral region (e.g., aluminum [Al] protected with Magnesium fluoride [MgF2]) often have high absorption and scatter properties degrading the throughput in an optical system. We investigate the use of optimally deposited aluminum and aluminum tri-fluoride (AlF3) materials for reflecting and solar blind band-pass filter coatings for use in the FUV. Optical characterization of the deposited designs has been performed using UV spectrometry. The optical thin film design and optimal deposition conditions to produce superior reflectance and transmittance using Al and AlF3 are presented.

Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

NASA Astrophysics Data System (ADS)

Mariappan, R.; Ponnuswamy, V.; Suresh, P.; Suresh, R.; Ragavendar, M.

2013-07-01

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 °C using the NSP technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 Å and c = 5.2018 Å with hexagonal structure and preferential orientation along (0 0 2) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (ɛr and ɛi) and optical conductivities (σr and σi) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

Effect of reduction time on third order optical nonlinearity of reduced graphene oxide

NASA Astrophysics Data System (ADS)

Sreeja, V. G.; Vinitha, G.; Reshmi, R.; Anila, E. I.; Jayaraj, M. K.

2017-04-01

We report the influence of reduction time on structural, linear and nonlinear optical properties of reduced graphene oxide (rGO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned with reduction time in GO is due to the increased structural ordering because of the restoration of sp2 carbon atoms with the time of reduction. The nonlinear absorption studies by open aperture Z-scan technique exhibited a saturable absorption. The nonlinear refraction studies showed the self de focusing nature of rGO by closed aperture Z scan technique. The nonlinear absorption coefficient and saturation intensity varies with the time for reduction of GO which is attributed to the depletion of valence band and the conduction band filling effect. Our results emphasize duration for reduction of GO dependent optical nonlinearity of rGO thin films to a great extent and explore its applications Q switched mode locking laser systems for generating ultra short laser pulses and in optical sensors. The rGO coated films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

Ultra-High Gradient S-band Linac for Laboratory and Industrial Applications

NASA Astrophysics Data System (ADS)

Faillace, L.; Agustsson, R.; Dolgashev, V.; Frigola, P.; Murokh, A.; Rosenzweig, J.; Yakimenko, V.

2010-11-01

A strong demand for high gradient structures arises from the limited real estate available for linear accelerators. RadiaBeam Technologies is developing a Doubled Energy Compact Accelerator (DECA) structure: an S-band standing wave electron linac designed to operate at accelerating gradients of up to 50 MV/m. In this paper, we present the radio-frequency design of the DECA S-band accelerating structure, operating at 2.856 GHz in the π-mode. The structure design is heavily influenced by NLC collaboration experience with ultra high gradient X-band structures; S-band, however, is chosen to take advantage of commonly available high power S-band klystrons.

Controlling the opto-electronic properties of nc-SiOx:H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Samanta, Subhashis

2018-01-01

A systematic development of undoped nc-SiOx:H thin films from (SiH4 + CO2) plasma diluted by a combination of H2 and He has been investigated through structural, optical and electrical characterization and correlation. Gradual inclusion of O into a highly crystalline silicon network progressively produces a two-phase structure where Si-nanocrystals (Si-nc) are embedded into the a-SiOx:H matrix. However, at the intermediate grain boundary region the growth of ultra-nanocrystallites controls the effectiveness of the material. The ultra-nanocrystallites are the part and portion of crystallinity accommodating the dominant fraction of thermodynamically preferred 〈220〉 crystallographic orientation, most favourable for stacked layer device performance. Atomic H plays a dominant role in maintaining an improved nanocrystalliny in the network even during O inclusion, while He in its excited state (He*) maintains a good energy balance at the grain boundary and produces a significant fraction of ultra-nanocrystalline component which has been demonstrated to organize the energetically favourable 〈220〉 crystallographic orientation in the network. The nc-SiOx:H films, maintaining proportionally good electrical conductivity over an wide range of optical band gap, remarkably low microstructure factor and simultaneous high crystalline volume fraction dominantly populated by ultra-nanocrystallites of 〈220〉 crystallographic orientation mostly at the grain boundary, have been obtained in technologically most popular 13.56 MHz PECVD SiH4 plasma even at a low substrate temperature ∼250 °C, convenient for device fabrication.

Link and Network Layers Design for Ultra-High-Speed Terahertz-Band Communications Networks

DTIC Science & Technology

2017-01-01

throughput, and identify the optimal parameter values for their design (Sec. 6.2.3). Moreover, we validate and test the scheme with experimental data obtained...LINK AND NETWORK LAYERS DESIGN FOR ULTRA-HIGH- SPEED TERAHERTZ-BAND COMMUNICATIONS NETWORKS STATE UNIVERSITY OF NEW YORK (SUNY) AT BUFFALO JANUARY...TYPE FINAL TECHNICAL REPORT 3. DATES COVERED (From - To) FEB 2015 – SEP 2016 4. TITLE AND SUBTITLE LINK AND NETWORK LAYERS DESIGN FOR ULTRA-HIGH

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

IEEE Radio and Wireless Symposium Student Awards Support Request: 2010-2012

DTIC Science & Technology

2012-01-01

Reconfigurable Architecture Enabling All-Digital Transmission for Cognitive Radios ……..3 Ultra-Wide Band Vivaldi Antenna Array using Low Loss SIW Power...1431714191, Iran 2University of Tennessee, Knoxville, TN, 37996, US Ultra-Wide Band Vivaldi Antenna Array using Low Loss SIW Power Divider and GCPW Wide

Synthesis and evaluation of ultra-pure rare-earth-coped glass for laser refrigeration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patterson, Wendy M; Hehlen, Markus P; Epstein, Richard I

2009-01-01

Significant progress has been made in synthesizing and characterizing ultra-pure, rare-earth doped ZIBLAN (ZrF{sub 4}-InF{sub 3}BaF{sub 2}-LaF{sub 3}-AlF{sub 3}-NaF) glass capable of laser refrigeration. The glass was produced from fluorides which were purified and subsequently treated with hydrofluoric gas at elevated temperatures to remove impurities before glass formation. Several Yb3 +-doped samples were studied with degrees of purity and composition with successive iterations producing an improved material. We have developed a non-invasive, spectroscopic technique, two band differential luminescence thermometry (TBDLT), to evaluate the intrinsic quality of the ytterbium doped ZIBLAN used for laser cooling experiments. TBDLT measures local temperature changesmore » within an illuminated volume resulting solely from changes in the relative thermal population of the excited state levels. This TBDLT technique utilizes two commercially available band pass filters to select and integrate the 'difference regions' of interest in the luminescence spectra. The goal is to determine the minimum temperature to which the ytterbium sample can cool on the local scale, unphased by surface heating. This temperature where heating and cooling are exactly balanced is the zero crossing temperature (ZCT) and can be used as a measure for the presence of impurities and the overall quality of the laser cooling material. Overall, favorable results were obtained from 1 % Yb3+-doped glass, indicating our glasses are desirable for laser refrigeration.« less

Numerical investigations of transient heat transfer characteristics and vitrification tendencies in ultra-fast cell cooling processes.

PubMed

Jiao, Anjun; Han, Xu; Critser, John K; Ma, Hongbin

2006-06-01

During freezing, cells are often damaged directly or indirectly by ice formation. Vitrification is an alternative approach to cryopreservation that avoids ice formation. The common method to achieve vitrification is to use relatively high concentrations of cryoprotectant agents (CPA) in combination with a relatively slow cooling rate. However, high concentrations of CPAs have potentially damaging toxic and/or osmotic effects on cells. Therefore, establishing methods to achieve vitrification with lower concentrations of CPAs through ultra-fast cooling rates would be advantageous in these aspects. These ultra-fast cooling rates can be realized by a cooling system with an ultra-high heat transfer coefficient (h) between the sample and coolant. The oscillating motion heat pipe (OHP), a novel cooling device utilizing the pressure change to excite the oscillation motion of the liquid plugs and vapor bubbles, can significantly increase h and may fulfill this aim. The current investigation was designed to numerically study the effects of different values of h on the transient heat transfer characteristics and vitrification tendencies of the cell suspension during the cooling processes in an ultra-thin straw (100 microm in diameter). The transient temperature distribution, the cooling rate and the volume ratio (x) of the ice quantity to the maximum crystallizable ice of the suspension were calculated. From these numerical results, it is concluded that the ultra-high h (>10(4) W/m2 K) obtained by OHPs could facilitate vitrification by efficiently decreasing x as well as the time to pass through the dangerous temperature region where the maximum ice formation happens. For comparison, OHPs can decrease both of the parameters to less than 20% of those from the widely used open pulled straw methods. Therefore, the OHP method will be a promising approach to improving vitrification tendencies of CPA solutions and could also decrease the required concentration of CPAs for vitrification, both of which are of great importance for the successful cryopreservation of cells by vitrification.

Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

NASA Astrophysics Data System (ADS)

Fang, Fang

2011-12-01

Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a combination of core levels and valence band ultraviolet photoemission spectra of the bulk materials as well as the heterojunction (Sb2Te 3/Bi2Te3), the VBO at p-type Sb2Te 3 and n-type Bi2Te3 is determined as 0.04 +/- 0.10 eV. Such a small energy offset is within the same magnitude of the thermal energy of kT, at room temperature. The motivation for the II-VI ZnTe-based thin film solar cell derives from the need to identify and overcome performance-limiting properties related to the processing of film deposition using close space sublimation (CSS). Chemical and electronic properties of the CSS grown ZnTe/ZnSe films were studied in x-ray diffraction, scanning electron microscopy and photoemission spectroscopy. Specifically, Se oxide was observed on the ZnSe surface, the removal of this oxide generated apparent offsets in the valence band and hence the alignment at the heterojunction energy diagram. Processing steps to mitigate oxidation yielded the best cells. Film structure was studied on the dependence of growth time; physical film damage is found during the initial stages when depositing ZnTe on a grown ZnSe film. Preliminary studies of films grown by evaporation and their characterizations are presented at last. In this thesis, a better understanding of the electronic structure at interfaces is built in two different thin film devices, and the resulting band energy diagram of the corresponding devices offered effective feedback in materials and device.The problem of energy equilibrium in the human body has received a great deal.

Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Sengupta, D. K.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; McKelvy, M.

1998-01-01

We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

Research on precision grinding technology of large scale and ultra thin optics

NASA Astrophysics Data System (ADS)

Zhou, Lian; Wei, Qiancai; Li, Jie; Chen, Xianhua; Zhang, Qinghua

2018-03-01

The flatness and parallelism error of large scale and ultra thin optics have an important influence on the subsequent polishing efficiency and accuracy. In order to realize the high precision grinding of those ductile elements, the low deformation vacuum chuck was designed first, which was used for clamping the optics with high supporting rigidity in the full aperture. Then the optics was planar grinded under vacuum adsorption. After machining, the vacuum system was turned off. The form error of optics was on-machine measured using displacement sensor after elastic restitution. The flatness would be convergenced with high accuracy by compensation machining, whose trajectories were integrated with the measurement result. For purpose of getting high parallelism, the optics was turned over and compensation grinded using the form error of vacuum chuck. Finally, the grinding experiment of large scale and ultra thin fused silica optics with aperture of 430mm×430mm×10mm was performed. The best P-V flatness of optics was below 3 μm, and parallelism was below 3 ″. This machining technique has applied in batch grinding of large scale and ultra thin optics.

Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures

NASA Astrophysics Data System (ADS)

Aziz, A.; Kassmi, K.; Maimouni, R.; Olivié, F.; Sarrabayrouse, G.; Martinez, A.

2005-09-01

In this paper, we present the theoretical and experimental results of the influence of a charge trapped in ultra-thin oxide of metal/ultra-thin oxide/semiconductor structures (MOS) on the I(Vg) current-voltage characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling type. The charge, which is negative, is trapped near the cathode (metal/oxide interface) after constant current injection by the metal (Vg<0). Of particular interest is the influence on the Δ Vg(Vg) shift over the whole I(Vg) characteristic at high field (greater than the injection field (>12.5 MV/cm)). It is shown that the charge centroid varies linearly with respect to the voltage Vg. The behavior at low field (<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge centroid is fixed. The results obtained make it possible to analyze the influence of the injected charge and the applied field on the centroid position of the trapped charge, and to highlight the charge instability in the ultra-thin oxide of MOS structures.

Optical gas monitor

DOEpatents

Wu, Sheng; Deev, Andrei; Palm, Steve L.; Tang, Yongchun; Goddard, William A.

2010-11-30

A frequency modulated spectroscopy system, including a photo-detector, a band-pass filter to filter the output of the photo-detector, and a rectifier to demodulate. The band-pass filter has a relatively high Q factor. With the high Q factor band-pass filter and rectifier, a reference sinusoid is not required for demodulation, resulting in phase-insensitive spectroscopy. Other embodiments are described and claimed.

Measurement and calculation of ternary oxide mixtures for thin films for ultra short pulse laser optics

NASA Astrophysics Data System (ADS)

Jupé, M.; Mende, M.; Kolleck, C.; Ristau, D.; Gallais, L.; Mangote, B.

2011-12-01

The femto-second technology gains of increasing importance in industrial applications. In this context, a new generation of compact and low cost laser sources has to be provided on a commercial basis. Typical pulse durations of these sources are specified in the range from a few hundred femtoup to some pico-seconds, and typical wavelengths are centered around 1030-1080nm. As a consequence, also the demands imposed on high power optical components for these laser sources are rapidly increasing, especially in respect to their power handling capability in the ultra-short pulse range. The present contribution is dedicated to some aspects for improving this quality parameter of optical coatings. The study is based on a set of hafnia and silica mixtures with different compositions and optical band gaps. This material combination displays under ultra-short pulse laser irradiation effects, which are typically for thermal processes. For instance, melting had been observed in the morphology of damaged sides. In this context, models for a prediction of the laser damage thresholds and scaling laws are scrutinized, and have been modified calculating the energy of the electron ensemble. Furthermore, a simple first order approach for the calculation of the temperature was included.

Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

NASA Astrophysics Data System (ADS)

Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

2018-01-01

This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

An Experimental Study of Ultra-Wide-Band and Ultra-Wide-Aperture Non-Collinear Acousto-Optic Diffraction in an Optically Biaxial Potassium Arsenate Titanyl Crystal

NASA Astrophysics Data System (ADS)

Milkov, M. G.; Voloshinov, V. B.; Isaenko, L. I.; Vedenyapin, V. N.

2018-01-01

Acousto-optic interaction in an optically biaxial crystalline medium under propagation of light close to one of the optical axes of a potassium arsenate titanyl KTiOAsO4 crystal has been studied. The experimental dependences of the intensity of a diffracted optical beam on the angle of light incidence on an ultrasonic wave have been obtained. It has been shown that a flat cut of a wave-vector surface provides development of an ultra-wide-aperture and ultra-wide-band acousto-optic deflector to control radiation in the visible and infrared electromagnetic spectral ranges.

Broadband enhancement of dielectric light trapping nanostructure used in ultra-thin solar cells

NASA Astrophysics Data System (ADS)

Yang, Dong; Xu, Zhaopeng; Bian, Fei; Wang, Haiyan; Wang, Jiazhuang; Sun, Lu

2018-03-01

A dielectric fishnet nanostructure is designed to increase the light trapping capability of ultra-thin solar cells. The complex performance of ultra-thin cells such as the optical response and electrical response are fully quantified in simulation through a complete optoelectronic investigation. The results show that the optimized light trapping nanostructure can enhances the electromagnetic resonance in active layer then lead to extraordinary enhancement of both absorption and light-conversion capabilities in the solar cell. The short-circuit current density increases by 49.46% from 9.40 mA/cm2 to 14.05 mA/cm2 and light-conversion efficiency increases by 51.84% from 9.51% to 14.44% compared to the benchmark, a solar cell with an ITO-GaAs-Ag structure.

An Ultra-wideband and Polarization-independent Metasurface for RCS Reduction

PubMed Central

Su, Pei; Zhao, Yongjiu; Jia, Shengli; Shi, Wenwen; Wang, Hongli

2016-01-01

In this paper, an ultra-wideband and polarization-independent metasurface for radar cross section (RCS) reduction is proposed. The unit cell of the metasurface operates in a linear cross-polarization scheme in a broad band. The phase and amplitude of cross-polarized reflection can be separately controlled by its geometry and rotation angle. Based on the diffuse reflection theory, a 3-bit coding metasurface is designed to reduce the RCS in an ultra-wide band. The wideband property of the metasurface benefits from the wideband cross polarization conversion and flexible phase modulation. In addition, the polarization-independent feature of the metasurface is achieved by tailoring the rotation angle of each element. Both the simulated and measured results demonstrate that the proposed metasurface can reduce the RCS significantly in an ultra-wide frequency band for both normal and oblique incidences, which makes it promising in the applications such as electromagnetic cloaking. PMID:26864084

An Ultra-wideband and Polarization-independent Metasurface for RCS Reduction.

PubMed

Su, Pei; Zhao, Yongjiu; Jia, Shengli; Shi, Wenwen; Wang, Hongli

2016-02-11

In this paper, an ultra-wideband and polarization-independent metasurface for radar cross section (RCS) reduction is proposed. The unit cell of the metasurface operates in a linear cross-polarization scheme in a broad band. The phase and amplitude of cross-polarized reflection can be separately controlled by its geometry and rotation angle. Based on the diffuse reflection theory, a 3-bit coding metasurface is designed to reduce the RCS in an ultra-wide band. The wideband property of the metasurface benefits from the wideband cross polarization conversion and flexible phase modulation. In addition, the polarization-independent feature of the metasurface is achieved by tailoring the rotation angle of each element. Both the simulated and measured results demonstrate that the proposed metasurface can reduce the RCS significantly in an ultra-wide frequency band for both normal and oblique incidences, which makes it promising in the applications such as electromagnetic cloaking.

Band-pass filtering algorithms for adaptive control of compressor pre-stall modes in aircraft gas-turbine engine

NASA Astrophysics Data System (ADS)

Kuznetsova, T. A.

2018-05-01

The methods for increasing gas-turbine aircraft engines' (GTE) adaptive properties to interference based on empowerment of automatic control systems (ACS) are analyzed. The flow pulsation in suction and a discharge line of the compressor, which may cause the stall, are considered as the interference. The algorithmic solution to the problem of GTE pre-stall modes’ control adapted to stability boundary is proposed. The aim of the study is to develop the band-pass filtering algorithms to provide the detection functions of the compressor pre-stall modes for ACS GTE. The characteristic feature of pre-stall effect is the increase of pressure pulsation amplitude over the impeller at the multiples of the rotor’ frequencies. The used method is based on a band-pass filter combining low-pass and high-pass digital filters. The impulse response of the high-pass filter is determined through a known low-pass filter impulse response by spectral inversion. The resulting transfer function of the second order band-pass filter (BPF) corresponds to a stable system. The two circuit implementations of BPF are synthesized. Designed band-pass filtering algorithms were tested in MATLAB environment. Comparative analysis of amplitude-frequency response of proposed implementation allows choosing the BPF scheme providing the best quality of filtration. The BPF reaction to the periodic sinusoidal signal, simulating the experimentally obtained pressure pulsation function in the pre-stall mode, was considered. The results of model experiment demonstrated the effectiveness of applying band-pass filtering algorithms as part of ACS to identify the pre-stall mode of the compressor for detection of pressure fluctuations’ peaks, characterizing the compressor’s approach to the stability boundary.

Development of ultra-high temperature material characterization capabilities using digital image correlation analysis

NASA Astrophysics Data System (ADS)

Cline, Julia Elaine

2011-12-01

Ultra-high temperature deformation measurements are required to characterize the thermo-mechanical response of material systems for thermal protection systems for aerospace applications. The use of conventional surface-contacting strain measurement techniques is not practical in elevated temperature conditions. Technological advancements in digital imaging provide impetus to measure full-field displacement and determine strain fields with sub-pixel accuracy by image processing. In this work, an Instron electromechanical axial testing machine with a custom-designed high temperature gripping mechanism is used to apply quasi-static tensile loads to graphite specimens heated to 2000°F (1093°C). Specimen heating via Joule effect is achieved and maintained with a custom-designed temperature control system. Images are captured at monotonically increasing load levels throughout the test duration using an 18 megapixel Canon EOS Rebel T2i digital camera with a modified Schneider Kreutznach telecentric lens and a combination of blue light illumination and narrow band-pass filter system. Images are processed using an open-source Matlab-based digital image correlation (DIC) code. Validation of source code is performed using Mathematica generated images with specified known displacement fields in order to gain confidence in accurate software tracking capabilities. Room temperature results are compared with extensometer readings. Ultra-high temperature strain measurements for graphite are obtained at low load levels, demonstrating the potential for non-contacting digital image correlation techniques to accurately determine full-field strain measurements at ultra-high temperature. Recommendations are given to improve the experimental set-up to achieve displacement field measurements accurate to 1/10 pixel and strain field accuracy of less than 2%.

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

PubMed

Kim, Hyun-Suk; Jeon, Sang Ho; Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Seon, Jong-Baek; Seo, Seok-Jun; Kim, Sun-Jae; Lee, Eunha; Chung, Jae Gwan; Lee, Hyungik; Han, Seungwu; Ryu, Myungkwan; Lee, Sang Yoon; Kim, Kinam

2013-01-01

Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors

PubMed Central

Kim, Hyun-Suk; Jeon, Sang Ho; Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Seon, Jong-Baek; Seo, Seok-Jun; Kim, Sun-Jae; Lee, Eunha; Chung, Jae Gwan; Lee, Hyungik; Han, Seungwu; Ryu, Myungkwan; Lee, Sang Yoon; Kim, Kinam

2013-01-01

Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a “dream” display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays. PMID:23492854

Cholesteric Liquid Crystal Based Reflex Color Reflective Displays

NASA Astrophysics Data System (ADS)

Khan, Asad

2012-02-01

Bistable color cholesteric liquid crystal displays are unique LCDs that exhibit high reflectivity, good contrast, extremely low power operation, and are amenable to versatile roll-to-roll manufacturing. The display technology, now branded as Reflex has been in commercialized products since 1996. It has been the subject of extensive research and development globally by a variety of parties in both academic and industrial settings. Today, the display technology is in volume production for applications such as dedicated eWriters (Boogie Board), full color electronic skins (eSkin), and displays for smart cards. The flexibility comes from polymerization induced phase separation using unique materials unparalleled in any other display technology. The blend of monomers, polymers, cross linkers, and other components along with nematic liquid crystals and chiral dopants is created and processed in such ways so as to enable highly efficient manufactrable displays using ultra thin plastic substrates -- often as thin as 50μm. Other significant aspects include full color by stacking or spatial separation, night vision capability, ultra high resolution, as well as active matrix capabilities. Of particular note is the stacking approach of Reflex based displays to show full color. This approach for reflective color displays is unique to this technology. Owing to high transparency in wavelength bands outside the selective reflection band, three primarily color layers can be stacked on top of each other and reflect without interfering with other layers. This highly surprising architecture enables the highest reflectivity of any other reflective electronic color display technology. The optics, architecture, electro-topics, and process techniques will be discussed. This presentation will focus on the physics of the core technology and color, it's evolution from rigid glass based displays to flexible displays, development of products from the paradigm shifting concepts to consumer products and related markets. This is a development that spans a wide space of highly technical development and fundamental science to products and commercialization to enable the entry of the technology into consumer markets.

VizieR Online Data Catalog: Merging galaxies with tidal tails in COSMOS to z=1 (Wen+, 2016)

NASA Astrophysics Data System (ADS)

Wen, Z. Z.; Zheng, X. Z.

2017-02-01

Our study utilizes the public data and catalogs from multi-band deep surveys of the COSMOS field. The UltraVISTA survey (McCracken+ 2012, J/A+A/544/A156) provides ultra-deep near-IR imaging observations of this field in the Y,J,H, and Ks-band, as well as a narrow band (NB118). The HST/ACS I-band imaging data are publicly available, allowing us to measure morphologies in the rest-frame optical for galaxies at z<=1. The HST/ACS I-band images reach a 5σ depth of 27.2 magnitude for point sources. (1 data file).

Ultra-high cooling rate utilizing thin film evaporation

NASA Astrophysics Data System (ADS)

Su, Fengmin; Ma, Hongbin; Han, Xu; Chen, Hsiu-hung; Tian, Bohan

2012-09-01

This research introduces a cell cryopreservation method, which utilizes thin film evaporation and provides an ultra-high cooling rate. The microstructured surface forming the thin film evaporation was fabricated from copper microparticles with an average diameter of 50 μm. Experimental results showed that a cooling rate of approximately 5×104 °C/min was achieved in a temperature range from 10 °C to -187 °C. The current investigation will give birth to a cell cryopreservation method through vitrification with relatively low concentrations of cryoprotectants.

Topological edge states in ultra thin Bi(110) puckered crystal lattice

NASA Astrophysics Data System (ADS)

Wang, Baokai; Hsu, Chuanghan; Chang, Guoqing; Lin, Hsin; Bansil, Arun

We discuss the electronic structure of a 2-ML Bi(110) film with a crystal structure similar to that of black phosphorene. In the absence of Spin-Orbit coupling (SOC), the film is found to be a semimetal with two kinds of Dirac cones, which are classified by their locations in the Brillouin zone. All Dirac nodes are protected by crystal symmetry and carry non-zero winding numbers. When considering ribbons, along specific directions, projections of Dirac nodes serve as starting or ending points of edge bands depending on the sign of their carried winding number. After the inclusion of the SOC, all Dirac nodes are gapped out. Correspondingly, the edge states connecting Dirac nodes split and cross each other, and thus form a Dirac node at the boundary of the 1D Brillouin zone, which suggests that the system is a Quantum Spin Hall insulator. The nontrivial Quantum Spin Hall phase is also confirmed by counting the product of parities of the occupied bands at time-reversal invariant points.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wojcik, Roza; Webb, Ian K.; Deng, Liulin

Understanding the biological mechanisms related to lipids and glycolipids is challenging due to the vast number of possible isomers. Mass spectrometry (MS) measurements are currently the dominant approach for studying and providing detailed information on lipid and glycolipid structures. However, difficulties in distinguishing many structural isomers (e.g. distinct acyl chain positions, double bond locations, as well as glycan isomers) inhibit the understanding of their biological roles. Here we utilized ultra-high resolution ion mobility spectrometry (IMS) separations based upon the use of traveling waves in a serpentine long path length multi-pass Structures for Lossless Manipulations (SLIM) to enhance isomer resolution. Themore » multi-pass arrangement allowed separations ranging from ~16 m (1 pass) to ~470 m (32 passes) to be investigated for the distinction of lipids and glycolipids with extremely small structural differences. Lastly, these ultra-high resolution SLIM IMS-MS analyses provide a foundation for exploring and better understanding isomer specific biological and disease processes.« less

Constructing Repairable Meta-Structures of Ultra-Broad-Band Electromagnetic Absorption from Three-Dimensional Printed Patterned Shells.

PubMed

Song, Wei-Li; Zhou, Zhili; Wang, Li-Chen; Cheng, Xiao-Dong; Chen, Mingji; He, Rujie; Chen, Haosen; Yang, Yazheng; Fang, Daining

2017-12-13

Ultra-broad-band electromagnetic absorption materials and structures are increasingly attractive for their critical role in competing with the advanced broad-band electromagnetic detection systems. Mechanically soft and weak wax-based materials composites are known to be insufficient to serve in practical electromagnetic absorption applications. To break through such barriers, here we developed an innovative strategy to enable the wax-based composites to be robust and repairable meta-structures by employing a three-dimensional (3D) printed polymeric patterned shell. Because of the integrated merits from both the dielectric loss wax-based composites and mechanically robust 3D printed shells, the as-fabricated meta-structures enable bear mechanical collision and compression, coupled with ultra-broad-band absorption (7-40 and 75-110 GHz, reflection loss  smaller than -10 dB) approaching state-of-the-art electromagnetic absorption materials. With the assistance of experiment and simulation methods, the design advantages and mechanism of employing such 3D printed shells for substantially promoting the electromagnetic absorption performance have been demonstrated. Therefore, such universal strategy that could be widely extended to other categories of wax-based composites highlights a smart stage on which high-performance practical multifunction meta-structures with ultra-broad-band electromagnetic absorption could be envisaged.

Ultra-wideband microwave absorber by connecting multiple absorption bands of two different-sized hyperbolic metamaterial waveguide arrays.

PubMed

Yin, Xiang; Long, Chang; Li, Junhao; Zhu, Hua; Chen, Lin; Guan, Jianguo; Li, Xun

2015-10-19

Microwave absorbers have important applications in various areas including stealth, camouflage, and antenna. Here, we have designed an ultra-broadband light absorber by integrating two different-sized tapered hyperbolic metamaterial (HMM) waveguides, each of which has wide but different absorption bands due to broadband slow-light response, into a unit cell. Both the numerical and experimental results demonstrate that in such a design strategy, the low absorption bands between high absorption bands with a single-sized tapered HMM waveguide array can be effectively eliminated, resulting in a largely expanded absorption bandwidth ranging from 2.3 to 40 GHz. The presented ultra-broadband light absorber is also insensitive to polarization and robust against incident angle. Our results offer a further step in developing practical artificial electromagnetic absorbers, which will impact a broad range of applications at microwave frequencies.

Distributed acoustic sensing system based on continuous wide-band ultra-weak fiber Bragg grating array

NASA Astrophysics Data System (ADS)

Tang, Jianguan; Li, Liang; Guo, Huiyong; Yu, Haihu; Wen, Hongqiao; Yang, Minghong

2017-04-01

A distributed acoustic sensing system (DAS) with low-coherence ASE and Michelson interferometer based on continuous width-band ultra-weak fiber Bragg grating (UW-FBG) array is proposed and experimentally demonstrated. The experimental result shows that the proposed system has better performance in detecting acoustic waves than the conventional hydrophone.

Compact electromagnetic bandgap structures for notch band in ultra-wideband applications.

PubMed

Rotaru, Mihai; Sykulski, Jan

2010-01-01

This paper introduces a novel approach to create notch band filters in the front-end of ultra-wideband (UWB) communication systems based on electromagnetic bandgap (EBG) structures. The concept presented here can be implemented in any structure that has a microstrip in its configuration. The EBG structure is first analyzed using a full wave electromagnetic solver and then optimized to work at WLAN band (5.15-5.825 GHz). Two UWB passband filters are used to demonstrate the applicability and effectiveness of the novel EBG notch band feature. Simulation results are provided for two cases studied.

Compact Electromagnetic Bandgap Structures for Notch Band in Ultra-Wideband Applications

PubMed Central

Rotaru, Mihai; Sykulski, Jan

2010-01-01

This paper introduces a novel approach to create notch band filters in the front-end of ultra-wideband (UWB) communication systems based on electromagnetic bandgap (EBG) structures. The concept presented here can be implemented in any structure that has a microstrip in its configuration. The EBG structure is first analyzed using a full wave electromagnetic solver and then optimized to work at WLAN band (5.15–5.825 GHz). Two UWB passband filters are used to demonstrate the applicability and effectiveness of the novel EBG notch band feature. Simulation results are provided for two cases studied. PMID:22163430

Spectroscopic ellipsometry characterization of ZnO:Sn thin films with various Sn composition deposited by remote-plasma reactive sputtering

NASA Astrophysics Data System (ADS)

Janicek, Petr; Niang, Kham M.; Mistrik, Jan; Palka, Karel; Flewitt, Andrew J.

2017-11-01

ZnO:Sn thin films were deposited onto thermally oxidized silicon substrates using a remote plasma reactive sputtering. Their optical constants (refractive index n and extinction coefficient k) were determined from ellipsometric data recorded over a wide spectral range (0.05-6 eV). Parametrization of ZnO:Sn complex dielectric permittivity consists of a parameterized semiconductor oscillator function describing the short wavelength absorption edge, a Drude oscillator describing free carrier absorption in near-infrared part of spectra and a Lorentz oscillator describing the long wavelength absorption edge and intra-band absorption in the ultra-violet part of the spectra. Using a Mott-Davis model, the increase in local disorder with increasing Sn doping is quantified from the short wavelength absorption edge onset. Using the Wemple-DiDomenico single oscillator model for the transparent part of the optical constants spectra, an increase in the centroid distance of the valence and conduction bands with increasing Sn doping is shown and only slight increase in intensity of the inter-band optical transition due to Sn doping occurs. The Drude model applied in the near-infrared part of the spectra revealed the free carrier concentration and mobility of ZnO:Sn. Results show that the range of transparency of prepared ZnO:Sn layers is not dramatically affected by Sn doping whereas electrical conductivity could be controlled by Sn doping. Refractive index in the transparent part is comparable with amorphous Indium Gallium Zinc Oxide allowing utilization of prepared ZnO:Sn layers as an indium-free alternative.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, A. S., E-mail: alastair.moore@physics.org; Ahmed, M. F.; Soufli, R.

A dual-channel streaked soft x-ray imager has been designed and used on high energy-density physics experiments at the National Ignition Facility. This streaked imager creates two images of the same x-ray source using two slit apertures and a single shallow angle reflection from a nickel mirror. Thin filters are used to create narrow band pass images at 510 eV and 360 eV. When measuring a Planckian spectrum, the brightness ratio of the two images can be translated into a color-temperature, provided that the spectral sensitivity of the two images is well known. To reduce uncertainty and remove spectral features inmore » the streak camera photocathode from this photon energy range, a thin 100 nm CsI on 50 nm Al streak camera photocathode was implemented. Provided that the spectral shape is well-known, then uncertainties on the spectral sensitivity limits the accuracy of the temperature measurement to approximately 4.5% at 100 eV.« less

A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

PubMed

Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

2011-05-01

A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

PubMed

Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

2014-12-21

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

Decorative power generating panels creating angle insensitive transmissive colors

PubMed Central

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-01-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ±70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications. PMID:24577075

Theoretical requirements for broadband perfect absorption of acoustic waves by ultra-thin elastic meta-films

PubMed Central

Duan, Yuetao; Luo, Jie; Wang, Guanghao; Hang, Zhi Hong; Hou, Bo; Li, Jensen; Sheng, Ping; Lai, Yun

2015-01-01

We derive and numerically demonstrate that perfect absorption of elastic waves can be achieved in two types of ultra-thin elastic meta-films: one requires a large value of almost pure imaginary effective mass density and a free space boundary, while the other requires a small value of almost pure imaginary effective modulus and a hard wall boundary. When the pure imaginary density or modulus exhibits certain frequency dispersions, the perfect absorption effect becomes broadband, even in the low frequency regime. Through a model analysis, we find that such almost pure imaginary effective mass density with required dispersion for perfect absorption can be achieved by elastic metamaterials with large damping. Our work provides a feasible approach to realize broadband perfect absorption of elastic waves in ultra-thin films. PMID:26184117

Decorative power generating panels creating angle insensitive transmissive colors

NASA Astrophysics Data System (ADS)

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L. Jay

2014-02-01

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to +/-70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Decorative power generating panels creating angle insensitive transmissive colors.

PubMed

Lee, Jae Yong; Lee, Kyu-Tae; Seo, Sungyong; Guo, L Jay

2014-02-28

We present ultra-thin (6 to 31 nm) undoped amorphous silicon/organic hybrid solar cell structure, which can transmit desired color of light. The transmitted colors show great angular tolerance due to the negligible optical phase associated with light propagating in ultra-thin amorphous silicon (a-Si) layers. We achieved the power conversion efficiency of the hybrid cells up to 2 %; and demonstrated that most of the absorbed photons in the undoped a-Si layer contributed to the extracted electric charges due to the suppressed electron-hole recombination in the ultra-thin a-Si layer. We also show the resonance is invariant with respect to the angle of incidence up to ± 70° regardless of the polarization of the incident light. Our exploration provides a design to realize energy harvesting colored photovoltaic panels for innovative applications.

Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

NASA Astrophysics Data System (ADS)

Qiu, Yijiao; Li, Wei; Wu, Maoyang; Fu, Junwei; Jiang, Yadong

2010-10-01

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels

NASA Astrophysics Data System (ADS)

Berthier, Florent; Beigne, Edith; Heitzmann, Frédéric; Debicki, Olivier; Christmann, Jean-Frédéric; Valentian, Alexandre; Billoint, Olivier; Amat, Esteve; Morche, Dominique; Chairat, Soundous; Sentieys, Olivier

2016-11-01

In this paper, we propose to analyze Ultra Thin Body and Box FDSOI technology suitability and architectural solutions for IoT applications and more specifically for autonomous Wireless Sensor Nodes (WSNs). As IoT applications are extremely diversified there is a strong need for flexible solutions at design, architectural level but also at technological level. Moreover, as most of those systems are recovering their energy from the environment, they are challenged by low voltage supplies and low leakage functionalities. We detail in this paper some Ultra Thin Body and Box FDSOI 28 nm characteristics and results demonstrating that this technology could be a perfect option for multidisciplinary IoT devices. Back biasing capabilities and low voltage features are investigated demonstrating efficient high speed/low leakage flexibility. In addition, architectural solutions for WSNs microcontroller are also proposed taking advantage of Ultra Thin Body and Box FDSOI characteristics for full user applicative flexibility. A partitioned architecture between an Always Responsive part with an asynchronous Wake Up Controller (WUC) managing WSN current tasks and an On Demand part with a main processor for application maintenance is presented. First results of the Always Responsive part implemented in Ultra Thin Body and Box FDSOI 28 nm are also exposed.

Time Series of SO2 Flux from Popocatépetl Volcano by an Ultra-Violet Camera with a Set of Different Band-Pass Filters

NASA Astrophysics Data System (ADS)

Schiavo, B.; Stremme, W.; Grutter, M.; Campion, R.; Rivera, C. I.; Inguaggiato, S.

2017-12-01

The measurement of SO2flux from active volcanoes are of great importance, for monitoring and hazard of volcanic activity, environmental impact and flux emissions related to changes of magmatic activity. Sulfur dioxide total flux from Popocatépetl volcano was determinad using a ultra-violet camera (or SO2 camera) with different band-pass filter. The flux is obteined from the product of the gas concentration over integrated the plume cross-section (slant column in molec/cm2 or ppm*m) and wind velocity data. Model of plume altitude and wind speed measurement are used to calculate a wind velocity, but a new method of sequential images is widely used in several years for this calculation. Volcanic plume measurements, for a total of about 60 days from from January to March 2017, were collected and utilized to generate the SO2 time series. The importance of monitoring and the time series of volcanic gas emissions is described and proven by many scientific studies. A time series of the Popocatépetl volcano will allow us to detect the volcanic gas as well as anomalies in volcanic processes and help to estimate the average SO2 flux of the volcano. We present a detailed description of the posterior correction of the dilution effect, which occurs due to a simplification of the radiative transfer equation. The correction scheme is especial applicable for long term monitoring from a permanent observation site. Images of volcanic SO2 plumes from the active Popocatépetl volcano in Mexico are presented, showing persistent passive degassing. The measurment are taken from the Altzomoni Atmospheric Observatory (19.12N, -98.65W, 3,985 m.a.s.l.), which forms part of the RUOA (www.ruoa.unam.mx) and NDACC (https://www2.acom.ucar.edu/irwg) networks. It is located north of the crater at 11 km distance. The data to calculate SO2 flux (t/d or kg/s) were recorded with the QSI UV camera and processed using Python scripts.

Band and Correlated Insulators of Cold Fermions in a Mesoscopic Lattice

NASA Astrophysics Data System (ADS)

Lebrat, Martin; Grišins, Pjotrs; Husmann, Dominik; Häusler, Samuel; Corman, Laura; Giamarchi, Thierry; Brantut, Jean-Philippe; Esslinger, Tilman

2018-01-01

We investigate the transport properties of neutral, fermionic atoms passing through a one-dimensional quantum wire containing a mesoscopic lattice. The lattice is realized by projecting individually controlled, thin optical barriers on top of a ballistic conductor. Building an increasingly longer lattice, one site after another, we observe and characterize the emergence of a band insulating phase, demonstrating control over quantum-coherent transport. We explore the influence of atom-atom interactions and show that the insulating state persists as contact interactions are tuned from moderately to strongly attractive. Using bosonization and classical Monte Carlo simulations, we analyze such a model of interacting fermions and find good qualitative agreement with the data. The robustness of the insulating state supports the existence of a Luther-Emery liquid in the one-dimensional wire. Our work realizes a tunable, site-controlled lattice Fermi gas strongly coupled to reservoirs, which is an ideal test bed for nonequilibrium many-body physics.

‘Parabolic’ trapped modes and steered Dirac cones in platonic crystals

PubMed Central

McPhedran, R. C.; Movchan, A. B.; Movchan, N. V.; Brun, M.; Smith, M. J. A.

2015-01-01

This paper discusses the properties of flexural waves governed by the biharmonic operator, and propagating in a thin plate pinned at doubly periodic sets of points. The emphases are on the design of dispersion surfaces having the Dirac cone topology, and on the related topic of trapped modes in plates for a finite set (cluster) of pinned points. The Dirac cone topologies we exhibit have at least two cones touching at a point in the reciprocal lattice, augmented by another band passing through the point. We show that these Dirac cones can be steered along symmetry lines in the Brillouin zone by varying the aspect ratio of rectangular lattices of pins, and that, as the cones are moved, the involved band surfaces tilt. We link Dirac points with a parabolic profile in their neighbourhood, and the characteristic of this parabolic profile decides the direction of propagation of the trapped mode in finite clusters. PMID:27547089

XPS studies of MgO based magnetic tunnel junction structures

NASA Astrophysics Data System (ADS)

Read, John; Mather, Phil; Tan, Eileen; Buhrman, Robert

2006-03-01

The very high tunneling magnetoresistance (TMR) obtained in MgO magnetic tunnel junctions (MTJ)^(1,2) motivates the investigation of the electronic properties of the MgO barrier layer and the study of the ferromagnetic metal - MgO interface chemistry. Such large TMR values are predicted by theory due to the high degree of order apparent in the barrier and electrode materials. However, as grown ultra-thin MgO films generally contain defects that can influence electron transport properties through the creation of low energy states within the bulk MgO band-gap. We will report the results of x-ray photoelectron spectroscopy (XPS) studies of (001) textured ultra-thin MgO layers that are prepared by RF magnetron sputtering and electron beam evaporation on ordered ferromagnetic electrodes and in ordered MTJ structures with and without post growth vacuum annealing. XPS spectra for both MgO deposition techniques clearly indicate a surface oxygen species that is likely bound by defects in the oxide^(3) in half-formed junctions and improvements in MgO quality after counter electrode deposition. We will discuss our results regarding the chemical properties of the oxide and its interfaces directed towards possibly providing guidance to engineer improved MgO MTJ devices. [1] S.S.P. Parkin et. al., Nature Materials, 3, 862 (2004). [2] S. Yuasa et. al., Nature Materials, 3, 868 (2004). [3] E. Tan et. al. , Phys. Rev. B. , 71, 161401 (2005).

A Compact Band-Pass Filter with High Selectivity and Second Harmonic Suppression

PubMed Central

Hadarig, Ramona Cosmina; de Cos Gomez, Maria Elena; Las-Heras, Fernando

2013-01-01

The design of a novel band-pass filter with narrow-band features based on an electromagnetic resonator at 6.4 GHz is presented. A prototype is manufactured and characterized in terms of transmission and reflection coefficient. The selective passband and suppression of the second harmonic make the filter suitable to be used in a C band frequency range for radar systems and satellite/terrestrial applications. To avoid substantial interference for this kind of applications, passive components with narrow band features and small dimensions are required. Between 3.6 GHz and 4.2 GHz the band-pass filter with harmonic suppression should have an attenuation of at least 35 dB, whereas for a passband, less than 10% is sufficient. PMID:28788412

Interface energetics and atomic structure of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb:SrTiO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Overmeere, Quentin, E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Baniecki, John D., E-mail: quentin.vanovermeere@uclouvain.be, E-mail: john.d.baniecki@jp.fujitsu.com; Yamazaki, Takashi

2015-06-15

The energetics at oxide semiconductor/La{sub 1−x}Sr{sub x}CoO{sub 3} heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La{sub 1−x}Sr{sub x}CoO{sub 3}-based devices. In this letter, the electronic and atomic structures of epitaxial La{sub 1−x}Sr{sub x}CoO{sub 3} on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO{sub 3}, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3dmore » states to the VB maximum of the LaCoO{sub 3} thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory.« less

Surface profiles and modulation of ultra-thin perfluoropolyether lubricant in contact sliding

NASA Astrophysics Data System (ADS)

Sinha, S. K.; Kawaguchi, M.; Kato, T.

2004-08-01

Deformation in shear and associated tribological behaviours of ultra-thin lubricants are of significant importance for the lubrication of magnetic hard disks and for other applications such as micro-electromechanical systems, nano-fluidics and nanotechnology. This paper presents the characteristics of the perfluoropolyether ultra-thin lubricant, in terms of its surface profiles when subjected to a contact sliding test. The results indicate that for a several-monolayers thick (~4.0-4.5 nm) lubricant film, sliding produces a considerable amount of surface roughness due to peaks of lubricant that persist during sliding; however, it can flow back or return to a smooth profile after a lapse of time when the sliding is stopped. For a monolayer-thin (~1.4-1.57 nm) film, the lubricant flow is restricted, and the rough profile created due to sliding persists and almost becomes permanent on the wear track. During sliding, due to high shear stress, a characteristic feature of lubricant profile modulation is observed. This modulation, or waviness, is due to the accumulation of lubricant in piles or islands, giving certain amplitudes and frequencies, which themselves depend upon the percentage of lubricant molecules that are chemically bonded to the substrate and the lubricant thickness. The results indicate that ultra-thin lubricants (monolayer and thicker) behave more like a semi-solid (having some sliding characteristics similar to those of rubbers) than a liquid when subjected to a high shear rate during contact sliding.

Ultra-thin enhanced-absorption long-wave infrared detectors

NASA Astrophysics Data System (ADS)

Wang, Shaohua; Yoon, Narae; Kamboj, Abhilasha; Petluru, Priyanka; Zheng, Wanhua; Wasserman, Daniel

2018-02-01

We propose an architecture for enhanced absorption in ultra-thin strained layer superlattice detectors utilizing a hybrid optical cavity design. Our detector architecture utilizes a designer-metal doped semiconductor ground plane beneath the ultra-subwavelength thickness long-wavelength infrared absorber material, upon which we pattern metallic antenna structures. We demonstrate the potential for near 50% detector absorption in absorber layers with thicknesses of approximately λ0/50, using realistic material parameters. We investigate detector absorption as a function of wavelength and incidence angle, as well as detector geometry. The proposed device architecture offers the potential for high efficiency detectors with minimal growth costs and relaxed design parameters.

106 17 Telemetry Standards Chapter 2

DTIC Science & Technology

2017-07-31

high frequency STC space -time code SOQPSK shaped offset quadrature phase shift keying UHF ultra- high frequency US&P United States...and Possessions VCO voltage-controlled oscillator VHF very- high frequency WCS Wireless Communication Service Telemetry Standards, RCC Standard...get interference. a. Telemetry Bands Air and space -to-ground telemetering is allocated in the ultra- high frequency (UHF) bands 1435 to 1535, 2200

Fabrication of Gold-Coated Ultra-Thin Anodic Porous Alumina Substrates for Augmented SERS

PubMed Central

Toccafondi, Chiara; Proietti Zaccaria, Remo; Dante, Silvia; Salerno, Marco

2016-01-01

Anodic porous alumina (APA) is a nanostructured material used as a template in several nanotechnological applications. We propose the use of APA in ultra-thin form (<100 nm) for augmented surface-enhanced Raman scattering (SERS). Here, the effect of in-depth thinning of the APA nanostructures for possible maximization of SERS was addressed. Anodization was carried out on ultra-thin films of aluminum on glass and/or silicon, followed by pore-opening. Gold (Au) was overcoated and micro-Raman/SERS measurements were carried out on test target analytes. Finite integration technique simulations of the APA-Au substrate were used both for the experimental design and simulations. It was observed that, under optimized conditions of APA and Au thickness, the SERS enhancement is higher than on standard APA-Au substrates based on thin (~100 nm) APA by up to a factor of ~20 for test molecules of mercaptobenzoic acid. The agreement between model and experimental results confirms the current understanding of SERS as being mainly due to the physical origin of plasmon resonances. The reported results represent one step towards micro-technological, integrated, disposable, high-sensitivity SERS chemical sensors and biosensors based on similar substrates. PMID:28773525

Ultra-smooth glassy graphene thin films for flexible transparent circuits

PubMed Central

Dai, Xiao; Wu, Jiang; Qian, Zhicheng; Wang, Haiyan; Jian, Jie; Cao, Yingjie; Rummeli, Mark H.; Yi, Qinghua; Liu, Huiyun; Zou, Guifu

2016-01-01

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon–like mechanical and chemical stability. Moreover, glassy graphene–based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits. PMID:28138535

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

NASA Astrophysics Data System (ADS)

Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

2018-03-01

Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

Full-band error control and crack-free surface fabrication techniques for ultra-precision fly cutting of large-aperture KDP crystals

NASA Astrophysics Data System (ADS)

Zhang, F. H.; Wang, S. F.; An, C. H.; Wang, J.; Xu, Q.

2017-06-01

Large-aperture potassium dihydrogen phosphate (KDP) crystals are widely used in the laser path of inertial confinement fusion (ICF) systems. The most common method of manufacturing half-meter KDP crystals is ultra-precision fly cutting. When processing KDP crystals by ultra-precision fly cutting, the dynamic characteristics of the fly cutting machine and fluctuations in the fly cutting environment are translated into surface errors at different spatial frequency bands. These machining errors should be suppressed effectively to guarantee that KDP crystals meet the full-band machining accuracy specified in the evaluation index. In this study, the anisotropic machinability of KDP crystals and the causes of typical surface errors in ultra-precision fly cutting of the material are investigated. The structures of the fly cutting machine and existing processing parameters are optimized to improve the machined surface quality. The findings are theoretically and practically important in the development of high-energy laser systems in China.

Near-infrared bulk optical properties of goat wound tissue and human serum: consequences for an implantable optical glucose sensor.

PubMed

Aernouts, Ben; Sharma, Sandeep; Gellynck, Karolien; Vlaminck, Lieven; Cornelissen, Maria; Saeys, Wouter

2016-10-01

Near-infrared (NIR) spectroscopy offers a promising technological platform for continuous glucose monitoring in the human body. Moreover, these measurements could be performed in vivo with an implantable single-chip based optical sensor. However, a thin tissue layer may grow in the optical path of the sensor. As most biological tissues are highly scattering, they only allow a small fraction of the collimated light to pass, significantly reducing the light throughput. To quantify the effect of a thin tissue layer in the optical path, the bulk optical properties of serum and tissue samples grown on implanted dummy sensors were characterized using double integrating sphere and unscattered transmittance measurements. The estimated bulk optical properties were then used to calculate the light attenuation through a thin tissue layer. The combination band of glucose was found to be the better option, relative to the first overtone band, as the absorptivity of glucose molecules is higher, while the reduction in unscattered transmittance due to tissue growth is less. Additionally, as the wound tissue was found to be highly scattering, the unscattered transmittance of the tissue layer is expected to be very low. Therefore, a sensor configuration which measures the diffuse transmittance and/or reflectance instead was recommended. (a) Dummy sensor; (b) explanted dummy sensor in tissue lump; (c) removal of dummy sensor from tissue lump; and (d) 900 µm slices of tissue lump. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Ultra-low-mass flexible planar solar arrays using 50-micron-thick solar cells

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Rayl, G.

1978-01-01

A conceptual design study has been completed which has shown the feasibility of ultra-low-mass planar solar arrays with specific power of 200 watts/kilogram. The beginning of life (BOL) power output of the array designs would be 10 kW at 1 astronomical unit (AU) and a 55C deg operating temperature. Two designs were studied: a retractable rollout design and a non-retractable fold-out. The designs employed a flexible low-mass blanket and low-mass structures. The blanket utilized 2 x 2 cm high-efficiency (13.5% at 28C deg AM0), ultra-thin (50 micron), silicon solar cells protected by thin (75 micron) plastic encapsulants. The structural design utilized the 'V'-stiffened approach which allows a lower mass boom to be used. In conjunction with the conceptual design, modules using the thin cells and plastic encapsulant were designed and fabricated.

Development of an ultra-thin film comprised of a graphene membrane and carbon nanotube vein support.

PubMed

Lin, Xiaoyang; Liu, Peng; Wei, Yang; Li, Qunqing; Wang, Jiaping; Wu, Yang; Feng, Chen; Zhang, Lina; Fan, Shoushan; Jiang, Kaili

2013-01-01

Graphene, exhibiting superior mechanical, thermal, optical and electronic properties, has attracted great interest. Considering it being one-atom-thick, and the reduced mechanical strength at grain boundaries, the fabrication of large-area suspended chemical vapour deposition graphene remains a challenge. Here we report the fabrication of an ultra-thin free-standing carbon nanotube/graphene hybrid film, inspired by the vein-membrane structure found in nature. Such a square-centimetre-sized hybrid film can realize the overlaying of large-area single-layer chemical vapour deposition graphene on to a porous vein-like carbon nanotube network. The vein-membrane-like hybrid film, with graphene suspended on the carbon nanotube meshes, possesses excellent mechanical performance, optical transparency and good electrical conductivity. The ultra-thin hybrid film features an electron transparency close to 90%, which makes it an ideal gate electrode in vacuum electronics and a high-performance sample support in transmission electron microscopy.

Ultra-thin plasma radiation detector

DOEpatents

Friedman, Peter S.

2017-01-24

A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

Ultra-thin optical vortex phase plate based on the metasurface and the angular momentum transformation

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Yan; Guo, Zhongyi; Li, Rongzhen; Zhang, Jingran; Zhang, Anjun; Qu, Shiliang

2015-04-01

The ultra-thin optical vortex phase plate (VPP) has been designed and investigated based on the metasurface of the metal rectangular split-ring resonators (MRSRRs) array. The circularly polarized incident light can convert into corresponding cross-polarization transmission light, and the phase and the amplitude of cross-polarization transmission light can be simultaneously governed by modulating two arms of the MRSRR. The MRSRR has been arranged in a special order for forming an ultra-thin optical VPP that can covert a plane wave into a vortex beam with a variety of the topological charges, and the transformation between spin angular momentum (SAM) and orbital angular momentum (OAM) has been discussed in detail. The multi-spectral characteristics of the VPP have also been investigated, and the operating bandwidth of the designed VPP is 190 nm (in the range of 710-900 nm), which enable a potential implication for integrated optics and vortex optics.

Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd

2016-05-21

Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatchmore » between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or polygon, total absorption remains approximately the same. However, the total absorption suffers significantly if the holes are triangle. The transmission spectra of incident light into the bottom subcell, and hence the absorption, change significantly for square and circle holes if the active materials change to cadmium selenide (CdSe) and cadmium telluride (CdTe) in the top and bottom subcells, respectively. Although the intermediate metal layer may induce electron-hole pair recombination due to surface defects, the short-circuit current density of an ultra-thin plasmonic solar cell with an intermediate metal layer with two-dimensional hole array is >9% of that of a structure without the intermediate metal layer.« less

Tunable rejection filters with ultra-wideband using zeroth shear mode plate wave resonators

NASA Astrophysics Data System (ADS)

Kadota, Michio; Sannomiya, Toshio; Tanaka, Shuji

2017-07-01

This paper reports wide band rejection filters and tunable rejection filters using ultra-wideband zeroth shear mode (SH0) plate wave resonators. The frequency range covers the digital TV band in Japan that runs from 470 to 710 MHz. This range has been chosen to meet the TV white space cognitive radio requirements of rejection filters. Wide rejection bands were obtained using several resonators with different frequencies. Tunable rejection filters were demonstrated using Si diodes connected to the band rejection filters. Wide tunable ranges as high as 31% were measured by applying a DC voltage to the Si diodes.

An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zulkifli, M Z; Ahmad, H; Hassan, N A

2011-07-31

A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm tomore » 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)« less

Nonlinear systems for frequency conversion from IR to RF

NASA Astrophysics Data System (ADS)

Dolasinski, Brian D.

The objective of this dissertation is to evaluate and develop novel sources for tunable narrowband IR generation, tunable narrowband THz generation, and ultra-wideband RF generation to be used in possible non-destructive evaluation systems. Initially a periodically poled Lithium Niobate (PPLN) based optical parametric amplifier (OPA) is designed using a double-pass configuration where a small part of the pump is used on the first pass to generate a signal, which is reflected and filtered by an off-axis etalon. The portion of the pump that is not phase matched on the first pass is retro-reflected back into the PPLN crystal and is co-aligned with the narrow bandwidth filtered signal and amplified. We demonstrate that the system is tunable in the 1.4 microm -1.6 microm signal range with a linewidth of 5.4 GHz. Next the outputs of seeded, dual periodically poled lithium niobate (PPLN) optical parametric amplifiers (OPA) are combined in the nonlinear crystal 4-dimethylamino-N-methyl-4-stilbazolium-tosylate (DAST) to produce a widely tunable narrowband THz source via difference frequency generation (DFG). We have demonstrated that this novel configuration enables the system to be seamlessly tuned, without mode-hops, from 1.2 THz to 26.3 THz with a minimum bandwidth of 3.1 GHz. The bandwidth of the source was measured by using the THz transmission spectrum of water vapor lines over a 3-meter path length. By selecting of the DFG pump wavelength to be at 1380 nm and the signal wavelength to tune over a range from 1380 nm to 1570 nm, we produced several maxima in the output THz spectrum that was dependent on the phase matching ability of the DAST crystal and the efficiency of our pyro-electric detector. Due to the effects of dispersive phase matching, filter absorption of the THz waves, and two-photon absorption multiple band gaps in the overall spectrum occur and are discussed. Employing the dual generator scheme, we have obtained THz images at several locations in the spectrum using an infrared camera that runs at a rate of 35 frames per second. We have demonstrated the ability to image 2 THz to 26 THz both in static and in real time conditions. We will present images of carbon fibers illuminated at different THz frequencies. Lastly, microwave generation was demonstrated by ultrafast photo-excitation experiments to induce non-equilibrium quasi-particle relaxation. Using a laser with a pulse energy of 1 mJ and a pulse duration greater than 120 fs (808 nm wavelength) incident on a charged, superconducting YBa2Cu 2O7-delta (YBCO) thin film ring, the photo-response was measured with a series of microwave antennas. From the observed nanosecond response time of the transient pulse, we extracted the frequency spectrum in the GHz regime that was dependent on the incident beam diameter, pulse duration, power, and the physical structure of the YBCO thin film.

Ultra-wide band signal generation using a coupling-tunable silicon microring resonator.

PubMed

Ding, Yunhong; Huang, Bo; Peucheret, Christophe; Xu, Jing; Ou, Haiyan; Zhang, Xinliang; Huang, Dexiu

2014-03-10

Ultra-wide band signal generation using a silicon microring resonator tuned to an NRZ-DPSK modulated optical carrier is proposed and demonstrated. The scheme is shown to enable the generation of UWB signals with switchable polarity and tunable bandwidth by simply tuning the coupling regions of the microring resonator. Monocycle pulses with both negative and positive polarities are successfully synthesized experimentally.

Efficient flattop ultra-wideband wavelength converters based on double-pass cascaded sum and difference frequency generation using engineered chirped gratings.

PubMed

Tehranchi, Amirhossein; Morandotti, Roberto; Kashyap, Raman

2011-11-07

High-efficiency ultra-broadband wavelength converters based on double-pass quasi-phase-matched cascaded sum and difference frequency generation including engineered chirped gratings in lossy lithium niobate waveguides are numerically investigated and compared to the single-pass counterparts, assuming a large twin-pump wavelength difference of 75 nm. Instead of uniform gratings, few-section chirped gratings with the same length, but with a small constant period change among sections with uniform gratings, are proposed to flatten the response and increase the mean efficiency by finding the common critical period shift and minimum number of sections for both single-pass and double-pass schemes whilst for the latter the efficiency is remarkably higher in a low-loss waveguide. It is also verified that for the same waveguide length and power, the efficiency enhancement expected due to the use of the double-pass scheme instead of the single-pass one, is finally lost if the waveguide loss increases above a certain value. For the double-pass scheme, the criteria for the design of the low-loss waveguide length, and the assignment of power in the pumps to achieve the desired efficiency, bandwidth and ripple are presented for the optimum 3-section chirped-gratings-based devices. Efficient conversions with flattop bandwidths > 84 nm for lengths < 3 cm can be obtained.

Introducing passive acoustic filter in acoustic based condition monitoring: Motor bike piston-bore fault identification

NASA Astrophysics Data System (ADS)

Jena, D. P.; Panigrahi, S. N.

2016-03-01

Requirement of designing a sophisticated digital band-pass filter in acoustic based condition monitoring has been eliminated by introducing a passive acoustic filter in the present work. So far, no one has attempted to explore the possibility of implementing passive acoustic filters in acoustic based condition monitoring as a pre-conditioner. In order to enhance the acoustic based condition monitoring, a passive acoustic band-pass filter has been designed and deployed. Towards achieving an efficient band-pass acoustic filter, a generalized design methodology has been proposed to design and optimize the desired acoustic filter using multiple filter components in series. An appropriate objective function has been identified for genetic algorithm (GA) based optimization technique with multiple design constraints. In addition, the sturdiness of the proposed method has been demonstrated in designing a band-pass filter by using an n-branch Quincke tube, a high pass filter and multiple Helmholtz resonators. The performance of the designed acoustic band-pass filter has been shown by investigating the piston-bore defect of a motor-bike using engine noise signature. On the introducing a passive acoustic filter in acoustic based condition monitoring reveals the enhancement in machine learning based fault identification practice significantly. This is also a first attempt of its own kind.

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Use of space ultra-vacuum for high quality semiconductor thin film growth

NASA Technical Reports Server (NTRS)

Ignatiev, A.; Sterling, M.; Sega, R. M.

1992-01-01

The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.

Chemical surface deposition of ultra-thin semiconductors

DOEpatents

McCandless, Brian E.; Shafarman, William N.

2003-03-25

A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

Development of an Ultraflex-Based Thin Film Solar Array for Space Applications

NASA Technical Reports Server (NTRS)

White, Steve; Douglas, Mark; Spence, Brian; Jones, P. Alan; Piszczor, Michael F.

2003-01-01

As flexible thin film photovoltaic (FTFPV) cell technology is developed for space applications, integration into a viable solar array structure that optimizes the attributes of this cell technology is critical. An advanced version of ABLE'sS UltraFlex solar array platform represents a near-term, low-risk approach to demonstrating outstanding array performance with the implementation of FTFPV technology. Recent studies indicate that an advanced UltraFlex solar array populated with 15% efficient thin film cells can achieve over 200 W/kg EOL. An overview on the status of hardware development and the future potential of this technology is presented.

Mars Global Surveyor Ka-Band Frequency Data Analysis

NASA Astrophysics Data System (ADS)

Morabito, D.; Butman, S.; Shambayati, S.

2000-01-01

The Mars Global Surveyor (MGS) spacecraft, launched on November 7, 1996, carries an experimental space-to-ground telecommunications link at Ka-band (32 GHz) along with the primary X-band (8.4 GHz) downlink. The signals are simultaneously transmitted from a 1.5-in diameter parabolic high gain antenna (HGA) on MGS and received by a beam-waveguide (BWG) R&D 34-meter antenna located in NASA's Goldstone Deep Space Network (DSN) complex near Barstow, California. The projected 5-dB link advantage of Ka-band relative to X-band was confirmed in previous reports using measurements of MGS signal strength data acquired during the first two years of the link experiment from December 1996 to December 1998. Analysis of X-band and Ka-band frequency data and difference frequency (fx-fka)/3.8 data will be presented here. On board the spacecraft, a low-power sample of the X-band downlink from the transponder is upconverted to 32 GHz, the Ka-band frequency, amplified to I-W using a Solid State Power Amplifier, and radiated from the dual X/Ka HGA. The X-band signal is amplified by one of two 25 W TWTAs. An upconverter first downconverts the 8.42 GHz X-band signal to 8 GHz and then multiplies using a X4 multiplier producing the 32 GHz Ka-band frequency. The frequency source selection is performed by an RF switch which can be commanded to select a VCO (Voltage Controlled Oscillator) or USO (Ultra-Stable Oscillator) reference. The Ka-band frequency can be either coherent with the X-band downlink reference or a hybrid combination of the USO and VCO derived frequencies. The data in this study were chosen such that the Ka-band signal is purely coherent with the X-band signal, that is the downconverter is driven by the same frequency source as the X-band downlink). The ground station used to acquire the data is DSS-13, a 34-meter BWG antenna which incorporates a series of mirrors inside beam waveguide tubes which guide the energy to a subterranean pedestal room, providing a stable environment for the feed and electronics equipment. A dichroic plate is used to reflect the X-band energy and pass the Ka-band energy to another mirror. The RF energy for each band is then focused onto a feed horn and low-noise amplifier package. After amplification and RF/IF downconversion, the IF signals are sent to the Experimental Tone Tracker (ETT), a digital phase-lock-loop receiver, which simultaneously tracks both X-band and Ka-band carrier signals. Once a signal is detected, the ETT outputs estimates of the SNR in a I -Hz bandwidth (Pc/No), baseband phase and frequency of the signals every I -sec. Between December 1996 and December 1998, the Ka-band and X-band signals from MGS were tracked on a regular basis using the ETT. The Ka-band downlink frequencies described here were referenced to the spacecraft's on-board USO which was also the X-band frequency reference (fka= 3.8 fx). The ETT estimates of baseband phase at I -second sampled time tags were converted to sky frequency estimates. Frequency residuals were then generated for each band by removing a model frequency from each observable frequency at each time tag. The model included Doppler and other effects derived from spacecraft trajectory files obtained from the MGS Navigation Team. A simple troposphere correction was applied to the data. In addition to residuals, the USO frequencies emitted by the spacecraft were estimated. For several passes, the USO frequencies were determined from X-band data and from Ka-band data (referred to X-band by dividing by 3.8) and were found to be in good agreement. In addition, X-band USO frequency estimates from MGS Radio Science data acquired from operational DSN stations were available for comparison and were found to agree within the I Hz level. The remaining sub-Hertz differences were attributed to the different models and software algorithms used by MGS Radio Science and KaBLE-11. A summary of the results of a linear fit of the USO frequency versus time (day of year) is presented in Table I for an initial segment of passes.

Method of sealing

DOEpatents

Groh, Edward F.; Cassidy, Dale A.

1978-01-01

A thermocouple lead or other small diameter wire, cable or tube is passed through a thin material such as sheet metal and sealed thereinto by drawing complementary longitudinally angled, laterally rounded grooves terminating at their base ends in a common plane in both sides of the thin material with shearing occuring at the deep end faces thereof to form a rounded opening in the thin material substantially perpendicular to the plane of the thin material, passing a thermocouple lead or similar object through the opening so formed and sealing the opening with a sealant which simultaneously bonds the lead to the thin material.

Classification of finger movements by using the ultra-wide band radar.

PubMed

Eldosoky, Mohamed A A

2010-12-01

The coding system of finger movements depends on the differences in the characteristics of the muscles that are responsible for these movements. The ability of ultra-wide band (UWB) radar for use as a tool for identifying the movements of each finger is presented. This will facilitate the ability of the UWB radar in designing a coding system for the movement of fingers of each hand.

Single-mode optical fiber design with wide-band ultra low bending-loss for FTTH application.

PubMed

Watekar, Pramod R; Ju, Seongmin; Han, Won-Taek

2008-01-21

We propose a new design of a single-mode optical fiber (SMF) which exhibits ultra low bend sensitivity over a wide communication band (1.3 microm to 1.65 microm). A five-cladding fiber structure has been proposed to minimize the bending loss, estimated to be as low as 4.4x10(-10) dB/turn for the bend radius of 10 mm.

A Wide Band Absorbing Material Design Using Band-Pass Frequency Selective Surface

NASA Astrophysics Data System (ADS)

Xu, Yonggang; Xu, Qiang; Liu, Ting; Zheng, Dianliang; Zhou, Li

2018-03-01

Based on the high frequency advantage characteristics of the Fe based absorbing coating, a method for designing the structure of broadband absorbing structure by using frequency selective surface (FSS) is proposed. According to the transmission and reflection characteristic of the different size FSS structure, the frequency variation characteristic was simulated. Secondly, the genetic algorithm was used to optimize the high frequency broadband absorbing materials, including the single and double magnetic layer material. Finally, the absorbing characteristics in iron layer were analyzed as the band pass FSS structure was embedded, the results showed that the band-pass FSS had the influence on widening the absorbing frequency. As the FSS was set as the bottom layer, it was effective to achieve the good absorbing property in low frequency and the high frequency absorbing performance was not weakened, because the band-pass FSS led the low frequency absorption and the high frequency shielding effect. The results of this paper are of guiding significance for designing and manufacturing the broadband absorbing materials.

Ultrafast modulators based on nonlinear photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Liu, Zhifu; Li, Jianheng; Tu, Yongming; Ho, Seng-Tiong; Wessels, Bruce W.

2011-03-01

Nonlinear photonic crystal (PhC) waveguides are being developed for ultrafast modulators. To enable phase velocity matching we have investigated one- and two-dimensional structures. Photonic crystal (PhC) waveguides based on epitaxial barium titanate (BTO) thin film in a Si3N4/BTO/MgO multilayer structure were fabricated by electron beam lithography or focused ion beam (FIB) milling. For both one- and two-dimensional PhCs, simulation shows that sufficient refractive index contrast is achieved to form a stop band. For one-dimensional Bragg reflector, we measured its slow light properties and the group refractive index of optical wave. For a millimeter long waveguide a 27 nm wide stop band was obtained at 1550 nm. A slowing of the light was observed, the group refractive indices at the mid band gap and at the band edges were estimated to be between 8.0 and 12 for the transverse electric (TE) mode, and 6.9 and 13 for the transverse magnetic (TM) mode. For TE optical modes, the enhancement factor of EO coefficient ranges from 7 to 13, and for the TM mode, the factor ranges from 5.9 to 15. Measurements indicate that near velocity phase matching can be realized. Upon realizing the phase velocity matching condition, devices with a small foot print with bandwidths at 490 GHz can be attained. Two-dimensional PhC crystal with a hexagonal lattice was also investigated. The PhCs were fabricated from epitaxial BTO thin film multilayers using focused ion beam milling. The PhCs are based on BTO slab waveguide and air hole arrays defined within Si3N4 and BTO thin films. A refractive index contrast of 0.4 between the barium titanate thin film multilayers and the air holes enables strong light confinement. For the TE optical mode, the hexagonal photonic crystal lattice with a diameter of 155 nm and a lattice constant of 740 nm yields a photonic bandgap over the wavelength range from 1525 to 1575 nm. The transmission spectrum of the PhC waveguide exhibits stronger Fabry Perot resonance compared to that of conventional waveguide. Measured transmission spectra show a bandgap in the ΓM direction in the reciprocal lattice that is in agreement with the simulated results using the finite-difference time-domain (FDTD) method. Compared to polarization intensity EO modulator with a half-wave voltage length product of 4.7 V•mm. The PhC based EO modulator has a factor of 6.6 improvement in the figure of merit performance. The thin film PhC waveguide devices show considerable potential for ultra-wide bandwidth electro-optic modulators as well as tunable optical filters and switches.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Ultra-thin and -broadband microwave magnetic absorber enhanced by phase gradient metasurface incorporation

NASA Astrophysics Data System (ADS)

Fan, Ya; Wang, Jiafu; Li, Yongfeng; Pang, Yongqiang; Zheng, Lin; Xiang, Jiayu; Zhang, Jieqiu; Qu, Shaobo

2018-05-01

Based on the effect of anomalous reflection and refraction caused by the circularly cross-polarized phase gradient metasurface (PGM), an ultra-thin and -broadband composite absorber composed of metasurface and conventional magnetic absorbing film is proposed and demonstrated in this paper. In the case of keeping nearly the same thickness of absorbing layer, the equivalent thickness of magnetic absorbing film is enlarged by the effect of anomalous reflection and refraction, resulting in the expansion and improvement of the absorbing bandwidth and efficiency in low microwave frequency. A biarc metallic sub-cell for circularly crossed polarization is adopted to form a broadband phase gradient, by the means of rotating the Pancharatnam–Berry phases. As indicated in the experimental results, the fabricated 3.6 mm-thick absorber can averagely absorb microwave energy with the specular reflection below  ‑10 dB in the frequency interval of 2–12 GHz, which shows a good match with simulated results. Due to ultra-thin thickness and ultra-wide operating bandwidth, the proposed application of PGM in absorbing can provide an alternative way to enhance the absorbing property of current absorbing materials.

Multivariate optical element platform for compressed detection of fluorescence markers

NASA Astrophysics Data System (ADS)

Priore, Ryan J.; Swanstrom, Joseph A.

2014-05-01

The success of a commercial fluorescent diagnostic assay is dependent on the selection of a fluorescent biomarker; due to the broad nature of fluorescence biomarker emission profiles, only a small number of fluorescence biomarkers may be discriminated from each other as a function of excitation source. Multivariate Optical Elements (MOEs) are thin-film devices that encode a broad band, spectroscopic pattern allowing a simple broadband detector to generate a highly sensitive and specific detection for a target analyte. MOEs have historically been matched 1:1 to a discrete analyte or class prediction; however, MOE filter sets are capable of sensing projections of the original sparse spectroscopic space enabling a small set of MOEs to discriminate a multitude of target analytes. This optical regression can offer real-time measurements with relatively high signal-to-noise ratios that realize the advantages of multiplexed detection and pattern recognition in a simple optical instrument. The specificity advantage of MOE-based sensors allows fluorescent biomarkers that were once incapable of discrimination from one another via optical band pass filters to be employed in a common assay panel. A simplified MOE-based sensor may ultimately reduce the requirement for highly trained operators as well as move certain life science applications like disease prognostication from the laboratory to the point of care. This presentation will summarize the design and fabrication of compressed detection MOE filter sets for detecting multiple fluorescent biomarkers simultaneously with strong spectroscopic interference as well as comparing the detection performance of the MOE sensor with traditional optical band pass filter methodologies.

UW Imaging of Seismic-Physical-Models in Air Using Fiber-Optic Fabry-Perot Interferometer.

PubMed

Rong, Qiangzhou; Hao, Yongxin; Zhou, Ruixiang; Yin, Xunli; Shao, Zhihua; Liang, Lei; Qiao, Xueguang

2017-02-17

A fiber-optic Fabry-Perot interferometer (FPI) has been proposed and demonstrated for the ultrasound wave (UW) imaging of seismic-physical models. The sensor probe comprises a single mode fiber (SMF) that is inserted into a ceramic tube terminated by an ultra-thin gold film. The probe performs with an excellent UW sensitivity thanks to the nanolayer gold film, and thus is capable of detecting a weak UW in air medium. Furthermore, the compact sensor is a symmetrical structure so that it presents a good directionality in the UW detection. The spectral band-side filter technique is used for UW interrogation. After scanning the models using the sensing probe in air, the two-dimensional (2D) images of four physical models are reconstructed.

A 15-pole high temperature superconductor filter for radar applications

NASA Astrophysics Data System (ADS)

Yu, Xiao; Xi, Weibin; Wu, Songtao

2018-06-01

This paper presents a compact and high first harmonic frequency resonator. The characteristics of this resonator are theoretically analyzed. A highly selective 15-pole Chebyshev high temperature superconducting ultra-high frequency narrowband filter for radar applications was fabricated by using this resonator. The filter has a center frequency of 495 MHz and a fractional bandwidth of 1%. The first harmonic frequency is more than 3.3 times the fundamental frequency. The measured filter shows excellent selectivity, better than 85 dB/1 MHz skirt slopes, and more than 85 dB of rejection at 497.5 MHz from the band edge. The filter was fabricated on a 2 inch YBCO thin film with a 0.5 mm thick MgO substrate. The experimental results are consistent with the simulations.

A manufacturable process integration approach for graphene devices

NASA Astrophysics Data System (ADS)

Vaziri, Sam; Lupina, Grzegorz; Paussa, Alan; Smith, Anderson D.; Henkel, Christoph; Lippert, Gunther; Dabrowski, Jarek; Mehr, Wolfgang; Östling, Mikael; Lemme, Max C.

2013-06-01

In this work, we propose an integration approach for double gate graphene field effect transistors. The approach includes a number of process steps that are key for future integration of graphene in microelectronics: bottom gates with ultra-thin (2 nm) high-quality thermally grown SiO2 dielectrics, shallow trench isolation between devices and atomic layer deposited Al2O3 top gate dielectrics. The complete process flow is demonstrated with fully functional GFET transistors and can be extended to wafer scale processing. We assess, through simulation, the effects of the quantum capacitance and band bending in the silicon substrate on the effective electric fields in the top and bottom gate oxide. The proposed process technology is suitable for other graphene-based devices such as graphene-based hot electron transistors and photodetectors.

Experimental Charging Behavior of Orion UltraFlex Array Designs

NASA Technical Reports Server (NTRS)

Golofaro, Joel T.; Vayner, Boris V.; Hillard, Grover B.

2010-01-01

The present ground based investigations give the first definitive look describing the charging behavior of Orion UltraFlex arrays in both the Low Earth Orbital (LEO) and geosynchronous (GEO) environments. Note the LEO charging environment also applies to the International Space Station (ISS). The GEO charging environment includes the bounding case for all lunar mission environments. The UltraFlex photovoltaic array technology is targeted to become the sole power system for life support and on-orbit power for the manned Orion Crew Exploration Vehicle (CEV). The purpose of the experimental tests is to gain an understanding of the complex charging behavior to answer some of the basic performance and survivability issues to ascertain if a single UltraFlex array design will be able to cope with the projected worst case LEO and GEO charging environments. Stage 1 LEO plasma testing revealed that all four arrays successfully passed arc threshold bias tests down to -240 V. Stage 2 GEO electron gun charging tests revealed that only the front side area of indium tin oxide coated array designs successfully passed the arc frequency tests

Nanoscale pillar arrays for separations

DOE PAGES

Kirchner, Teresa; Strickhouser, Rachel; Hatab, Nahla; ...

2015-04-01

The work presented herein evaluates silicon nano-pillar arrays for use in planar chromatography. Electron beam lithography and metal thermal dewetting protocols were used to create nano-thin layer chromatography platforms. With these fabrication methods we are able to reduce the size of the characteristic features in a separation medium below that used in ultra-thin layer chromatography; i.e. pillar heights are 1-2μm and pillar diameters are typically in the 200- 400nm range. In addition to the intrinsic nanoscale aspects of the systems, it is shown they can be further functionalized with nanoporous layers and traditional stationary phases for chromatography; hence exhibit broad-rangingmore » lab-on-a-chip and point-of-care potential. Because of an inherent high permeability and very small effective mass transfer distance between pillars, chromatographic efficiency can be very high but is enhanced herein by stacking during development and focusing while drying, yielding plate heights in the nm range separated band volumes. Practical separations of fluorescent dyes, fluorescently derivatized amines, and anti-tumor drugs are illustrated.« less

First Evidence of Jupiter Ring

NASA Technical Reports Server (NTRS)

1979-01-01

First evidence of a ring around the planet Jupiter is seen in this photograph taken by Voyager 1 on March 4, 1979. The multiple exposure of the extremely thin faint ring appears as a broad light band crossing the center of the picture. The edge of the ring is 1,212,000 km from the spacecraft and 57,000 km from the visible cloud deck of Jupiter. The background stars look like broken hair pins because of spacecraft motion during the 11 minute 12 second exposure. The wavy motion of the star trails is due to the ultra-slow natural oscillation of the spacecraft (with a period of 78 seconds). The black dots are geometric calibration points in the camera. The ring thickness is estimated to be 30 km or less. The photograph was part of a sequence planned to search for such rings in Jupiter's equatorial plane. The ring has been invisible from Earth because of its thinness and its transparency when viewed at any angle except straight on. JPL manages and controls the Voyager Project for NASA's Office of Space Science.

Jupiter's ring

NASA Technical Reports Server (NTRS)

1979-01-01

First evidence of a ring around the planet Jupiter is seen in this photograph taken by Voyager 1 on March 4, 1979. The multiple exposure of the extremely thin faint ring appears as a broad light band crossing the center of the picture. The edge of the ring is 1,212,000 km from the spacecraft and 57,000 km from the visible cloud deck of Jupiter. The background stars look like broken hair pins because of spacecraft motion during the 11 minute 12 second exposure. The wavy motion of the star trails is due to the ultra-slow natural oscillation of the spacecraft (with a period of 78 seconds). The black dots are geometric calibration points in the camera. The ring thickness is estimated to be 30 km or less. The photograph was part of a sequence planned to search for such rings in Jupiter's equatorial plane. The ring has been invisible from Earth because of its thinness and its transparency when viewed at any angle except straight on. JPL manages and controls the Voyager Project for NASA's Office of Space Science.

Jupiter Ring

NASA Image and Video Library

2000-03-23

First evidence of a ring around the planet Jupiter is seen in this photograph taken by Voyager 1 on March 4, 1979. The multiple exposure of the extremely thin faint ring appears as a broad light band crossing the center of the picture. The edge of the ring is 1,212,000 km from the spacecraft and 57,000 km from the visible cloud deck of Jupiter. The background stars look like broken hair pins because of spacecraft motion during the 11 minute 12 second exposure. The wavy motion of the star trails is due to the ultra-slow natural oscillation of the spacecraft (with a period of 78 seconds). The black dots are geometric calibration points in the camera. The ring thickness is estimated to be 30 km or less. The photograph was part of a sequence planned to search for such rings in Jupiter's equatorial plane. The ring has been invisible from Earth because of its thinness and its transparency when viewed at any angle except straight on. JPL manages and controls the Voyager Project for NASA's Office of Space Science. http://photojournal.jpl.nasa.gov/catalog/PIA02251

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

NASA Astrophysics Data System (ADS)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shekhter, P., E-mail: Pini@tx.technion.ac.il; Amouyal, Y.; Eizenberg, M.

2016-07-07

One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd{sub 2}O{sub 3} films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase onmore » Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.« less

Series-Coupled Pairs of Silica Microresonators

NASA Technical Reports Server (NTRS)

Savchenkov, Anatoliy; Iltchenko, Vladimir; Maleki, Lute; Handley, Tim

2009-01-01

Series-coupled pairs of whispering-gallery-mode optical microresonators have been demonstrated as prototypes of stable, narrow-band-pass photonic filters. Characteristics that are generally considered desirable in a photonic or other narrow-band-pass filter include response as nearly flat as possible across the pass band, sharp roll-off, and high rejection of signals outside the pass band. A single microresonator exhibits a Lorentzian filter function: its peak response cannot be made flatter and its roll-off cannot be made sharper. However, as a matter of basic principle applicable to resonators in general, it is possible to (1) use multiple resonators, operating in series or parallel, to obtain a roll-off sharper, and out-of-band rejection greater, relative to those of a Lorentzian filter function and (2) to make the peak response (the response within the pass band) flatter by tuning the resonators to slightly different resonance frequencies that span the pass band. The first of the two microresonators in each series-coupled pair was a microtorus made of germania-doped silica (containing about 19 mole percent germania), which is a material used for the cores of some optical fibers. The reasons for choosing this material is that exposing it to ultraviolet light causes it to undergo a chemical change that changes its index of refraction and thereby changes the resonance frequency. Hence, this material affords the means to effect the desired slight relative detuning of the two resonators. The second microresonator in each pair was a microsphere of pure silica. The advantage of making one of the resonators a torus instead of a sphere is that its spectrum of whispering-gallery-mode resonances is sparser, as needed to obtain a frequency separation of at least 100 GHz between resonances of the filter as a whole.

The Smallest Form Factor UWB Antenna with Quintuple Rejection Bands for IoT Applications Utilizing RSRR and RCSRR.

PubMed

Rahman, MuhibUr; Park, Jung-Dong

2018-03-19

In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.5, 5.25, 5.7, and 8.2 GHz, inseminating four rectangular complementary split ring resonators (RCSRRs) on the radiating patch and placing two rectangular split-ring resonators (RSRR) near the feedline-patch junction of the conventional ultra-wideband (UWB) antenna. The design guidelines of the implemented notched bands are provided at the desired frequency bands and analyzed. The measured results demonstrate that the proposed antenna delivers a wide impedance bandwidth from 3 to 11 GHz with a nearly omnidirectional radiation pattern, high rejection in the multiple notched-bands, and good radiation efficiency over the entire frequency band except at the notched frequencies. Simulated and measured response match well specifically at the stop-bands.

The Smallest Form Factor UWB Antenna with Quintuple Rejection Bands for IoT Applications Utilizing RSRR and RCSRR

PubMed Central

2018-01-01

In this paper, we present the smallest form factor microstrip-fed ultra-wideband antenna with quintuple rejection bands for use in wireless sensor networks, mobile handsets, and Internet of things (IoT). Five rejection bands have been achieved at the frequencies of 3.5, 4.5, 5.25, 5.7, and 8.2 GHz, inseminating four rectangular complementary split ring resonators (RCSRRs) on the radiating patch and placing two rectangular split-ring resonators (RSRR) near the feedline-patch junction of the conventional ultra-wideband (UWB) antenna. The design guidelines of the implemented notched bands are provided at the desired frequency bands and analyzed. The measured results demonstrate that the proposed antenna delivers a wide impedance bandwidth from 3 to 11 GHz with a nearly omnidirectional radiation pattern, high rejection in the multiple notched-bands, and good radiation efficiency over the entire frequency band except at the notched frequencies. Simulated and measured response match well specifically at the stop-bands. PMID:29562714

Compact filtering monopole patch antenna with dual-band rejection.

PubMed

Kim, Sun-Woong; Choi, Dong-You

2016-01-01

In this paper, a compact ultra-wideband patch antenna with dual-band rejection is proposed. The proposed antenna filters 3.3-3.8 GHz WiMAX and 5.15-5.85 GHz WLAN by respectively rejecting these bands through a C-shaped slit and a λg/4 resonator. The λg/4 resonator is positioned as a pair, centered around the microstrip line, and a C-type slit is inserted into an elliptical patch. The impedance bandwidth of the proposed antenna is 2.9-9.3 GHz, which satisfies the bandwidth for ultra-wideband communication systems. Further, the proposed antenna provides dual-band rejection at two bands: 3.2-3.85 and 4.7-6.03 GHz. The radiation pattern of the antenna is omnidirectional, and antenna gain is maintained constantly while showing -8.4 and -1.5 dBi at the two rejected bands, respectively.

Chromatic-aberration-corrected diffractive lenses for ultra-broadband focusing

DOE PAGES

Wang, Peng; Mohammad, Nabil; Menon, Rajesh

2016-02-12

We exploit the inherent dispersion in diffractive optics to demonstrate planar chromatic-aberration-corrected lenses. Specifically, we designed, fabricated and characterized cylindrical diffractive lenses that efficiently focus the entire visible band (450 nm to 700 nm) onto a single line. These devices are essentially pixelated, multi-level microstructures. Experiments confirm an average optical efficiency of 25% for a three-wavelength apochromatic lens whose chromatic focus shift is only 1.3 μm and 25 μm in the lateral and axial directions, respectively. Super-achromatic performance over the continuous visible band is also demonstrated with averaged lateral and axial focus shifts of only 1.65 μm and 73.6 μm,more » respectively. These lenses are easy to fabricate using single-step grayscale lithography and can be inexpensively replicated. Furthermore, these devices are thin (<3 μm), error tolerant, has low aspect ratio (<1:1) and offer polarization-insensitive focusing, all significant advantages compared to alternatives that rely on metasurfaces. Lastly, our design methodology offers high design flexibility in numerical aperture and focal length, and is readily extended to 2D.« less

Integrated amateur band and ultra-wide band monopole antenna with multiple band-notched

NASA Astrophysics Data System (ADS)

Srivastava, Kunal; Kumar, Ashwani; Kanaujia, B. K.; Dwari, Santanu

2018-05-01

This paper presents the integrated amateur band and ultra-wide band (UWB) monopole antenna with integrated multiple band-notched characteristics. It is designed for avoiding the potential interference of frequencies 3.99 GHz (3.83 GHz-4.34 GHz), 4.86 GHz (4.48 GHz-5.63 GHz), 7.20 GHz (6.10 GHz-7.55 GHz) and 8.0 GHz (7.62 GHz-8.47 GHz) with VSWR 4.9, 11.5, 6.4 and 5.3, respectively. Equivalent parallel resonant circuits have been presented for each band-notched frequencies of the antenna. Antenna operates in amateur band 1.2 GHz (1.05 GHz-1.3 GHz) and UWB band from 3.2 GHz-13.9 GHz. Different substrates are used to verify the working of the proposed antenna. Integrated GSM band from 0.6 GHz to 1.8 GHz can also be achieved by changing the radius of the radiating patch. Antenna gain varied from 1.4 dBi to 9.8 dBi. Measured results are presented to validate the antenna performances.

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

NASA Astrophysics Data System (ADS)

Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

2007-11-01

Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

Feasibility demonstration for electroplating ultra-thin polyimide film. [fabricating film for space erectable structures

NASA Technical Reports Server (NTRS)

Schneier, R.; Braswell, T. V.; Vaughn, R. W.

1978-01-01

The effect of electrodeposition variables on film thickness was investigated using a dilute polyimide solution as a bath into which aluminum (as foil or as a vapor deposited coating) was immersed. The electrodeposited film was dried for 2 hours at 93 C (primarily to remove solvent) and cured for 18 hours at 186 C. Infrared studies indicate that imide formation (curing) occurs at 149 C under vacuum. From a conceptual viewpoint, satisfactory film metallized on one side can be obtained by this method. The cured ultra thin polyimide film exhibits properties equivalent to those of commercial film, and the surface appearance of the strippable polyimide film compares favorably with that of a sample of commercial film of thicker gauge. The feasibility of manufacturing approximately one million sq m of ultra thin film capable of being joined to fabricate an 800 m by 9 800 m square from starting material 0.5 to 1 m wide for space erectable structures was demonstrated.

60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

PubMed

Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

2015-08-10

We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide.

Ultra-thin L1{sub 0}-FePt for perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ho, Pin; Chow, Gan Moog; Chen, Jing-Sheng, E-mail: msecj@nus.edu.sg

2014-05-07

Perpendicular anisotropy L1{sub 0}-FePt/Ag/[Co/Pd]{sub 30} pseudo spin valves (PSVs) with ultra-thin L1{sub 0}-FePt alloy free layer possessing high anisotropy and thermal stability have been fabricated and studied. The thickness of the L1{sub 0}-FePt layer was varied between 2 and 4 nm. The PSV became increasingly decoupled with reduced L1{sub 0}-FePt thickness due to the larger difference between the coercivity of the L1{sub 0}-FePt and [Co/Pd]{sub 30} films. The PSV with an ultra-thin L1{sub 0}-FePt free layer of 2 nm displayed a high K{sub u} of 2.21 × 10{sup 7} ergs/cm{sup 3}, high thermal stability of 84 and a largest giant magnetoresistance of 0.54%.

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Juho; Song, Kwangsun; Kim, Namyun

2016-06-20

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric powermore » similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.« less

Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

NASA Astrophysics Data System (ADS)

Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

2014-03-01

LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

PubMed

Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

2014-05-13

The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Plasmonic excitation-assisted optical and electric enhancement in ultra-thin solar cells: the influence of nano-strip cross section

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabaeian, Mohammad, E-mail: sabaiean@scu.ac.ir; Heydari, Mehdi; Ajamgard, Narges

The effects of Ag nano-strips with triangle, rectangular and trapezoid cross sections on the optical absorption, generation rate, and short-circuit current density of ultra-thin solar cells were investigated. By putting the nano-strips as a grating structure on the top of the solar cells, the waveguide, surface plasmon polariton (SPP), and localized surface plasmon (LSP) modes, which are excited with the assistance of nano-strips, were evaluated in TE and TM polarizations. The results show, firstly, the TM modes are more influential than TE modes in optical and electrical properties enhancement of solar cell, because of plasmonic excitations in TM mode. Secondly,more » the trapezoid nano-strips reveal noticeable impact on the optical absorption, generation rate, and short-circuit current density enhancement than triangle and rectangular ones. In particular, the absorption of long wavelengths which is a challenge in ultra-thin solar cells is significantly improved by using Ag trapezoid nano-strips.« less

Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

NASA Astrophysics Data System (ADS)

Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

2018-04-01

Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline H. (Inventor)

2015-01-01

A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Enhancing a Simple MODIS Cloud Mask Algorithm for the Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Wilson, Michael J.; Oreopoulos, Lazarous

2011-01-01

The presence of clouds in images acquired by the Landsat series of satellites is usually an undesirable, but generally unavoidable fact. With the emphasis of the program being on land imaging, the suspended liquid/ice particles of which clouds are made of fully or partially obscure the desired observational target. Knowing the amount and location of clouds in a Landsat scene is therefore valuable information for scene selection, for making clear-sky composites from multiple scenes, and for scheduling future acquisitions. The two instruments in the upcoming Landsat Data Continuity Mission (LDCM) will include new channels that will enhance our ability to detect high clouds which are often also thin in the sense that a large fraction of solar radiation can pass through them. This work studies the potential impact of these new channels on enhancing LDCM's cloud detection capabilities compared to previous Landsat missions. We revisit a previously published scheme for cloud detection and add new tests to capture more of the thin clouds that are harder to detect with the more limited arsenal channels. Since there are no Landsat data yet that include the new LDCM channels, we resort to data from another instrument, MODIS, which has these bands, as well as the other bands of LDCM, to test the capabilities of our new algorithm. By comparing our revised scheme's performance against the performance of the official MODIS cloud detection scheme, we conclude that the new scheme performs better than the earlier scheme which was not very good at thin cloud detection.

Quantification of strain and charge co-mediated magnetoelectric coupling on ultra-thin Permalloy/PMN-PT interface.

PubMed

Nan, Tianxiang; Zhou, Ziyao; Liu, Ming; Yang, Xi; Gao, Yuan; Assaf, Badih A; Lin, Hwaider; Velu, Siddharth; Wang, Xinjun; Luo, Haosu; Chen, Jimmy; Akhtar, Saad; Hu, Edward; Rajiv, Rohit; Krishnan, Kavin; Sreedhar, Shalini; Heiman, Don; Howe, Brandon M; Brown, Gail J; Sun, Nian X

2014-01-14

Strain and charge co-mediated magnetoelectric coupling are expected in ultra-thin ferromagnetic/ferroelectric multiferroic heterostructures, which could lead to significantly enhanced magnetoelectric coupling. It is however challenging to observe the combined strain charge mediated magnetoelectric coupling, and difficult in quantitatively distinguish these two magnetoelectric coupling mechanisms. We demonstrated in this work, the quantification of the coexistence of strain and surface charge mediated magnetoelectric coupling on ultra-thin Ni0.79Fe0.21/PMN-PT interface by using a Ni0.79Fe0.21/Cu/PMN-PT heterostructure with only strain-mediated magnetoelectric coupling as a control. The NiFe/PMN-PT heterostructure exhibited a high voltage induced effective magnetic field change of 375 Oe enhanced by the surface charge at the PMN-PT interface. Without the enhancement of the charge-mediated magnetoelectric effect by inserting a Cu layer at the PMN-PT interface, the electric field modification of effective magnetic field was 202 Oe. By distinguishing the magnetoelectric coupling mechanisms, a pure surface charge modification of magnetism shows a strong correlation to polarization of PMN-PT. A non-volatile effective magnetic field change of 104 Oe was observed at zero electric field originates from the different remnant polarization state of PMN-PT. The strain and charge co-mediated magnetoelectric coupling in ultra-thin magnetic/ferroelectric heterostructures could lead to power efficient and non-volatile magnetoelectric devices with enhanced magnetoelectric coupling.

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-02-23

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure.more » Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.« less

SEMICONDUCTOR INTEGRATED CIRCUITS: An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

NASA Astrophysics Data System (ADS)

Fangxiong, Chen; Min, Lin; Heping, Ma; Hailong, Jia; Yin, Shi; Forster, Dai

2009-08-01

An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS (global positioning system) and Bluetooth systems.

NASA Tech Briefs, April 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

Band-pass Fabry-Pèrot magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Sharma, Abhishek; Tulapurkar, Ashwin. A.; Muralidharan, Bhaskaran

2018-05-01

We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass Fabry-Pèrot magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (≈5 × 104%) and nearly 1200% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronic device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.

Mechanical low-frequency filter via modes separation in 3D periodic structures

NASA Astrophysics Data System (ADS)

D'Alessandro, L.; Belloni, E.; Ardito, R.; Braghin, F.; Corigliano, A.

2017-12-01

This work presents a strategy to design three-dimensional elastic periodic structures endowed with complete bandgaps, the first of which is ultra-wide, where the top limits of the first two bandgaps are overstepped in terms of wave transmission in the finite structure. Thus, subsequent bandgaps are merged, approaching the behaviour of a three-dimensional low-pass mechanical filter. This result relies on a proper organization of the modal characteristics, and it is validated by performing numerical and analytical calculations over the unit cell. A prototype of the analysed layout, made of Nylon by means of additive manufacturing, is experimentally tested to assess the transmission spectrum of the finite structure, obtaining good agreement with numerical predictions. The presented strategy paves the way for the development of a class of periodic structures to be used in robust and reliable wave attenuation over a wide frequency band.

Materials Science and Device Physics of 2-Dimensional Semiconductors

NASA Astrophysics Data System (ADS)

Fang, Hui

Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this van der Waals heterostructure. This result enables new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers and highlights the ability to build van der Waals semiconductor heterostructure lasers/LEDs.

Design and demonstration of ultra-fast W-band photonic transmitter-mixer and detectors for 25 Gbits/sec error-free wireless linking.

PubMed

Chen, Nan-Wei; Shi, Jin-Wei; Tsai, Hsuan-Ju; Wun, Jhih-Min; Kuo, Fong-Ming; Hesler, Jeffery; Crowe, Thomas W; Bowers, John E

2012-09-10

A 25 Gbits/s error-free on-off-keying (OOK) wireless link between an ultra high-speed W-band photonic transmitter-mixer (PTM) and a fast W-band envelope detector is demonstrated. At the transmission end, the high-speed PTM is developed with an active near-ballistic uni-traveling carrier photodiode (NBUTC-PD) integrated with broadband front-end circuitry via the flip-chip bonding technique. Compared to our previous work, the wireless data rate is significantly increased through the improvement on the bandwidth of the front-end circuitry together with the reduction of the intermediate-frequency (IF) driving voltage of the active NBUTC-PD. The demonstrated PTM has a record-wide IF modulation (DC-25 GHz) and optical-to-electrical fractional bandwidths (68-128 GHz, ~67%). At the receiver end, the demodulation is realized with an ultra-fast W-band envelope detector built with a zero-bias Schottky barrier diode with a record wide video bandwidth (37 GHz) and excellent sensitivity. The demonstrated PTM is expected to find applications in multi-gigabit short-range wireless communication.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

Holographic spectrum-splitting optical systems for solar photovoltaics

NASA Astrophysics Data System (ADS)

Zhang, Deming

Solar energy is the most abundant source of renewable energy available. The relatively high cost prevents solar photovoltaic (PV) from replacing fossil fuel on a larger scale. In solar PV power generation the cost is reduced with more efficient PV technologies. In this dissertation, methods to improve PV conversion efficiency with holographic optical components are discussed. The tandem multiple-junction approach has achieved very high conversion efficiency. However it is impossible to manufacture tandem PV cells at a low cost due to stringent fabrication standards and limited material types that satisfy lattice compatibility. Current produced by the tandem multi-junction PV cell is limited by the lowest junction due to series connection. Spectrum-splitting is a lateral multi-junction concept that is free of lattice and current matching constraints. Each PV cell can be optimized towards full absorption of a spectral band with tailored light-trapping schemes. Holographic optical components are designed to achieve spectrum-splitting PV energy conversion. The incident solar spectrum is separated onto multiple PV cells that are matched to the corresponding spectral band. Holographic spectrum-splitting can take advantage of existing and future low-cost technologies that produces high efficiency thin-film solar cells. Spectrum-splitting optical systems are designed and analyzed with both transmission and reflection holographic optical components. Prototype holograms are fabricated and high optical efficiency is achieved. Light-trapping in PV cells increases the effective optical path-length in the semiconductor material leading to improved absorption and conversion efficiency. It has been shown that the effective optical path length can be increased by a factor of 4n2 using diffusive surfaces. Ultra-light-trapping can be achieved with optical filters that limit the escape angle of the diffused light. Holographic reflection gratings have been shown to act as angle-wavelength selective filters that can function as ultra-light-trapping filters. Results from an experimental reflection hologram are used to model the absorption enhancement factor for a silicon solar cell and light-trapping filter. The result shows a significant improvement in current generation for thin-film silicon solar cells under typical operating conditions.

Mars Reconnaissance Orbiter Ka-band (32 GHz) Demonstration: Cruise Phase Operations

NASA Technical Reports Server (NTRS)

Shambayati, Shervin; Morabito, David; Border, James S.; Davarian, Faramaz; Lee, Dennis; Mendoza, Ricardo; Britcliffe, Michael; Weinreb, Sander

2006-01-01

The X-band (8.41 GHz) frequency currently used for deep space telecommunications is too narrow (50 MHz) to support future high rate missions. Because of this NASA has decided to transition to Ka-band (32 GHz) frequencies. As weather effects cause much larger fluctuations on Ka-band than on X-band, the traditional method of using a few dBs of margin to cover these fluctuations is wasteful of power for Ka-band; therefore, a different operations concept is needed for Ka-band links. As part of the development of the operations concept for Ka-band, NASA has implemented a fully functioning Ka-band communications suite on its Mars Reconnaissance Orbiter (MRO). This suite will be used during the primary science phase to develop and refine the Ka-band operations concept for deep space missions. In order to test the functional readiness of the spacecraft and the Deep Space Network's (DSN) readiness to support the demonstration activities a series of passes over DSN 34-m Beam Waveguide (BWG) antennas were scheduled during the cruise phase of the mission. MRO was launched on August 12, 2005 from Kennedy Space Center, Cape Canaveral, Florida, USA and went into Mars Orbit on March 10, 2006. A total of ten telemetry demonstration and one high gain antenna (HGA) calibration passes were allocated to the Ka-band demonstration. Furthermore, a number of "shadow" passes were also scheduled where, during a regular MRO track over a Ka-band capable antenna, Ka-band was identically configured as the X-band and tracked by the station. In addition, nine Ka-band delta differential one way ranging ((delta)DOR) passes were scheduled. During these passes, the spacecraft and the ground system were put through their respective paces. Among the highlights of these was setting a single day record for data return from a deep space spacecraft (133 Gbits) achieved during one 10-hour pass; achieving the highest data rate ever from a planetary mission (6 Mbps) and successfully demonstrating Ka-band DDOR. In addition, DSN performed well. However, there are concerns with the active pointing of the Ka-band antennas as well as delivery of the monitor data from the stations. The spacecraft also presented challenges not normally associated with planetary missions mostly because of its very high equivalent isotropic radiated power (EIRP). This caused problems in accurately evaluating the in-flight EIRP of the spacecraft which led to difficulties evaluating the quality of the HGA calibration data. These led to the development of additional measurement techniques that could be used for future high-power deep space missions.

Fourier transform profilometry (FTP) using an innovative band-pass filter for accurate 3-D surface reconstruction

NASA Astrophysics Data System (ADS)

Chen, Liang-Chia; Ho, Hsuan-Wei; Nguyen, Xuan-Loc

2010-02-01

This article presents a novel band-pass filter for Fourier transform profilometry (FTP) for accurate 3-D surface reconstruction. FTP can be employed to obtain 3-D surface profiles by one-shot images to achieve high-speed measurement. However, its measurement accuracy has been significantly influenced by the spectrum filtering process required to extract the phase information representing various surface heights. Using the commonly applied 2-D Hanning filter, the measurement errors could be up to 5-10% of the overall measuring height and it is unacceptable to various industrial application. To resolve this issue, the article proposes an elliptical band-pass filter for extracting the spectral region possessing essential phase information for reconstructing accurate 3-D surface profiles. The elliptical band-pass filter was developed and optimized to reconstruct 3-D surface models with improved measurement accuracy. Some experimental results verify that the accuracy can be effectively enhanced by using the elliptical filter. The accuracy improvement of 44.1% and 30.4% can be achieved in 3-D and sphericity measurement, respectively, when the elliptical filter replaces the traditional filter as the band-pass filtering method. Employing the developed method, the maximum measured error can be kept within 3.3% of the overall measuring range.

High-energy asymmetric supercapacitors based on free-standing hierarchical Co-Mo-S nanosheets with enhanced cycling stability.

PubMed

Balamurugan, Jayaraman; Li, Chao; Peera, Shaik Gouse; Kim, Nam Hoon; Lee, Joong Hee

2017-09-21

Layered transition metal sulfides (TMS) are emerging as advanced materials for energy storage and conversion applications. In this work, we report a facile and cost-effective anion exchange technique to fabricate a layered, multifaceted, free standing, ultra-thin ternary cobalt molybdenum sulfide nanosheet (Co-Mo-S NS) architecture grown on a 3D porous Ni foam substrate. The unique Co-Mo layered double hydroxides are first synthesized as precursors and consequently transformed into ultra-thin Co-Mo-S NS. When employed as an electrode for supercapacitors, the Co-Mo-S NS delivered an ultra-high specific capacitance of 2343 F g -1 at a current density of 1 mA cm -2 with tremendous rate capability and extraordinary cycling performance (96.6% capacitance retention after 20 000 cycles). Furthermore, assembled Co-Mo-S/nitrogen doped graphene nanosheets (NGNS) in an asymmetric supercapacitor (ASC) device delivered an excellent energy density of 89.6 Wh kg -1 , an amazing power density of 20.07 kW kg -1 , and superior cycling performance (86.8% capacitance retention after 50 000 cycles). Such exceptional electrochemical performance of Co-Mo-S NS is ascribed to the good electrical contact with the 3D Ni foam, ultra-high contact area with the electrolyte, and enhanced architectural softening during the charging/discharging process. It is expected that the fabricated, unique, ultra-thin Co-Mo-S NS have great potential for future energy storage devices.

Development of a laser Doppler displacement encoder system with ultra-low-noise-level for linear displacement measurement with subnanometer resolution - Final CRADA Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, Deming

An U.S. DOE Cooperative Research and Development Agreement (CRADA) between ANL and Optodyne, Inc. has been established to develop a prototype laser Doppler displacement encoder system with ultra-low noise level for linear measurements to sub-nanometer resolution for synchrotron radiation applications. We have improved the heterodyne efficiency and reduced the detector shot noises by proper shielding and adding a low-pass filter. The laser Doppler displacement encoder system prototype demonstrated a ~ 1 nm system output noise floor with single reflection optics. With multiple-pass optical arrangement, 0.1 nm scale closed-loop feedback control is achieved.

Wear resistant pavement study.

DOT National Transportation Integrated Search

2009-01-01

This report documents the construction of three special pavement test sections on I-90 east of Spokane, Washington. The test sections included ultra-thin and thin whitetopping, Modified Class D open graded asphalt concrete, and micro/macro surfacing ...

Characterization of the punching shear capacity of thin ultra-high performance concrete slabs.

DOT National Transportation Integrated Search

2005-01-01

Ultra-high performance concrete (UHPC) is a relatively new type of concrete that exhibits mechanical properties that are far superior to those of conventional concrete and in some cases rival those of steel. The main characteristics that distinguish ...

[Design and Implementation of Image Interpolation and Color Correction for Ultra-thin Electronic Endoscope on FPGA].

PubMed

Luo, Qiang; Yan, Zhuangzhi; Gu, Dongxing; Cao, Lei

This paper proposed an image interpolation algorithm based on bilinear interpolation and a color correction algorithm based on polynomial regression on FPGA, which focused on the limited number of imaging pixels and color distortion of the ultra-thin electronic endoscope. Simulation experiment results showed that the proposed algorithm realized the real-time display of 1280 x 720@60Hz HD video, and using the X-rite color checker as standard colors, the average color difference was reduced about 30% comparing with that before color correction.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE PAGES

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel; ...

2017-11-16

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Two-dimensional ultra-thin SiO(x) (0 < x < 2) nanosheets with long-term cycling stability as lithium ion battery anodes.

PubMed

Sun, Lin; Su, Tingting; Xu, Lei; Liu, Meipin; Du, Hong-Bin

2016-03-21

Ultra-thin SiO(x) (0 < x < 2) nanosheets were obtained via a convenient solvothermal route from a Zintl compound CaSi2. After carbon coating, the SiOx@C nanosheet anodes exhibit high capacity, good rate and superior cycling performance for high-capacity lithium ion battery applications. The specific capacity can be maintained as high as 760 mA h g(-1) with almost no capacity decay after 400 cycles at a current density of 0.5 A g(-1).

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-07-27

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

Studies on the performance of TiO{sub 2} thin films as protective layer to chlorophyll in Ocimum tenuiflorum L from UV radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malliga, P.; Selvi, B. Karunai; Pandiarajan, J.

Thin films of TiO{sub 2} were prepared on glass substrates using sol-gel dip coating technique. The films with 10 coatings were prepared and annealed at temperatures 350°C, 450°C and 550°C for 1 hour in muffle furnace. The annealed films were characterized by X – Ray diffraction (XRD), UV – Visible, AFM, Field Effect Scanning Electron Microscopy (FESEM) and EDAX studies. Chlorophyll has many health benefits due to its structural similarity to human blood and its good chelating ability. It has antimutagenic and anticarcinogenic properties. UV light impairs photosynthesis and reduces size, productivity, and quality in many of the crop plantmore » species. Increased exposure of UV light reduces chlorophyll contents a, b and total content in plants. Titanium Dioxide (TiO{sub 2}) is a wide band gap semiconductor and efficient light harvester. TiO{sub 2} has strong UltraViolet (UV) light absorbing capability. Here, we have studied the performance of TiO{sub 2} thin films as a protective layer to the chlorophyll contents present in medicinal plant, tulsi (Ocimum tenuiflorum L) from UV radiation. The study reveals that crystallite size increases, transmittance decreases and chlorophyll contents increases with increase in annealing temperature. This study showed that TiO{sub 2} thin films are good absorber of UV light and protect the chlorophyll contents a, b and total content in medicinal plants.« less

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.

The narrow pass band filter of tunable 1D phononic crystals with a dielectric elastomer layer

NASA Astrophysics Data System (ADS)

Wu, Liang-Yu; Wu, Mei-Ling; Chen, Lien-Wen

2009-01-01

In this paper, we study the defect bands of a 1D phononic crystal consisting of aluminum (Al) and polymethyl methacrylate (PMMA) layers with a dielectric elastomer (DE) defect layer. The plane wave expansion (PWE) method and supercell calculation are used to calculate the band structure and the defect bands. The transmission spectra are obtained using the finite element method (FEM). Since the thickness of the dielectric elastomer defect layer is controlled by applying an electric voltage, the frequencies of the defect bands can be tuned. A narrow pass band filter can be developed and designed by using the dielectric elastomer.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

High Resolution X-Ray Micro-CT of Ultra-Thin Wall Space Components

NASA Technical Reports Server (NTRS)

Roth, Don J.; Rauser, R. W.; Bowman, Randy R.; Bonacuse, Peter; Martin, Richard E.; Locci, I. E.; Kelley, M.

2012-01-01

A high resolution micro-CT system has been assembled and is being used to provide optimal characterization for ultra-thin wall space components. The Glenn Research Center NDE Sciences Team, using this CT system, has assumed the role of inspection vendor for the Advanced Stirling Convertor (ASC) project at NASA. This article will discuss many aspects of the development of the CT scanning for this type of component, including CT system overview; inspection requirements; process development, software utilized and developed to visualize, process, and analyze results; calibration sample development; results on actual samples; correlation with optical/SEM characterization; CT modeling; and development of automatic flaw recognition software. Keywords: Nondestructive Evaluation, NDE, Computed Tomography, Imaging, X-ray, Metallic Components, Thin Wall Inspection

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

NASA Astrophysics Data System (ADS)

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

PubMed Central

Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

2016-01-01

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

Retrieval of land cover information under thin fog in Landsat TM image

NASA Astrophysics Data System (ADS)

Wei, Yuchun

2008-04-01

Thin fog, which often appears in remote sensing image of subtropical climate region, has resulted in the low image quantity and bad image mapping. Therefore, it is necessary to develop the image processing method to retrieve land cover information under thin fog. In this paper, the Landsat TM image near the Taihu Lake that is in the subtropical climate zone of China was used as an example, and the workflow and method used to retrieve the land cover information under thin fog have been built based on ENVI software and a single TM image. The basic step covers three parts: 1) isolating the thin fog area in image according to the spectral difference of different bands; 2) retrieving the visible band information of different land cover types under thin fog from the near-infrared bands according to the relationships between near-infrared bands and visible bands of different land cover types in the area without fog; 3) image post-process. The result showed that the method in the paper is easy and suitable, and can be used to improve the quantity of TM image mapping more effectively.

Ultra-narrow band perfect absorbers based on Fano resonance in MIM metamaterials

NASA Astrophysics Data System (ADS)

Zhang, Ming; Fang, Jiawen; Zhang, Fei; Chen, Junyan; Yu, Honglin

2017-12-01

Metallic nanostructures have attracted numerous attentions in the past decades due to their attractive plasmonic properties. Resonant plasmonic perfect absorbers have promising applications in a wide range of technologies including photothermal therapy, thermophotovoltaics, heat-assisted magnetic recording and biosensing. However, it remains to be a great challenge to achieve ultra-narrow band in near-infrared band with plasmonic materials due to the large optical losses in metals. In this letter, we introduced Fano resonance in MIM metamaterials composed of an asymmetry double elliptic cylinders (ADEC), which can achieve ultra-narrow band perfect absorbers. In theoretical calculations, we observed an ultranarrow band resonant absorption peak with the full width at half maximum (FWHM) of 8 nm and absorption amplitude exceeding 99% at 930 nm. Moreover, we demonstrate that the absorption increases with the increase of asymmetry and the absorption resonant wavelength can be tuned by changing the size and arrangement of the unit cell. The asymmetry metallic nanostructure also exhibit a higher refractive sensitivity as large as 503 nm/RIU with high figure of merit of 63, which is promising for high sensitive sensors. Results of this work are desirable for various potential applications in micro-technological structures such as biological sensors, narrowband emission, photodetectors and solar thermophotovoltaic (STPV) cells.

Optical filters for linearly polarized light using sculptured nematic thin flim of TiO2

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Wali, Faiz; Rehman, Zia ur

2018-05-01

A study of optical filters using sculptured nematic thin films is presented in this article. A central 90◦ twist-defect between two sculptured nematic thin films (SNTFs) sections transmit light of same polarization state and reflect other in the spectral Bragg regime. The SNTFs reflect light of both linearly polarized states in the Bragg regime if the amplitude of modulation of vapor incident angle is increased. A twist-defect in a tilt-modulated sculptured nematic thin films as a result produces bandpass or ultra-narrow bandpass filter depending upon the thickness of the SNTFs. However, both the bandpass or/and ultra-narrow bandpass filters can make polarization-insensitive Bragg mirrors by the appropriate modulation of the tilted 2D nanostructures of a given sculptured nematic thin films. Moreover, it is also observed that the sculptured nematic thin films are very tolerant of the structural defects if the amplitude of modulating vapor incident angle of the structural nano-materials is sufficiently large. Similarly, we observed the affect of incident angles on Bragg filters.

Performance of high-temperature superconducting band-pass filters with high selectivity for base transceiver applications of digital cellular communication systems

NASA Astrophysics Data System (ADS)

Kwak, J. S.; Lee, J. H.; Kim, C. O.; Hong, J. P.; Han, S. K.; Char, K.

2002-07-01

Highly selective high-temperature superconducting band-pass filters based on spiral meander line structures have been developed for base transceiver station applications of digital cellular communication systems. The filter comprised 12-pole microstrip line resonators with a circuit size of 0.5 × 17 × 41 mm3. The filter was designed to have a bandwidth of 25 MHz at a centre frequency of 834 MHz. Particularly, the physical size of each resonator was chosen not only to reduce far-field radiation, but also to have reasonable tunability in the filter. Device characteristics exhibited a low insertion loss of 0.4 dB with a 0.2 dB ripple and a return loss better than 10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB at about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge.

The Effect of Welding Energy on the Microstructural and Mechanical Properties of Ultrasonic-Welded Copper Joints

PubMed Central

Yang, Jingwei; Cao, Biao; Lu, Qinghua

2017-01-01

The effects of welding energy on the mechanical and microstructural characteristics of ultrasonic-welded pure copper plates were investigated. Complex dynamic recrystallization and grain growth occurred inside the weld zone during ultrasonic welding. At a low welding energy, a thin band of straight weld interfaces was observed and had an ultra-fine grain structure. With an increase in welding energy, the weld interface progressively changed from flat to sinusoidal, and eventually turned into a convoluted wavy pattern, bearing similarities to shear instabilities, as observed in fluid dynamics. The lap shear load of the joints initially increased and then remained stable as the welding energy increased. The tensile characteristics of the joints significantly depended on the development of plastic deformation at the interface. The influence of the microstructure on the hardness was also discussed. PMID:28772553

High-Frequency Fiber-Optic Ultrasonic Sensor Using Air Micro-Bubble for Imaging of Seismic Physical Models.

PubMed

Gang, Tingting; Hu, Manli; Rong, Qiangzhou; Qiao, Xueguang; Liang, Lei; Liu, Nan; Tong, Rongxin; Liu, Xiaobo; Bian, Ce

2016-12-14

A micro-fiber-optic Fabry-Perot interferometer (FPI) is proposed and demonstrated experimentally for ultrasonic imaging of seismic physical models. The device consists of a micro-bubble followed by the end of a single-mode fiber (SMF). The micro-structure is formed by the discharging operation on a short segment of hollow-core fiber (HCF) that is spliced to the SMF. This micro FPI is sensitive to ultrasonic waves (UWs), especially to the high-frequency (up to 10 MHz) UW, thanks to its ultra-thin cavity wall and micro-diameter. A side-band filter technology is employed for the UW interrogation, and then the high signal-to-noise ratio (SNR) UW signal is achieved. Eventually the sensor is used for lateral imaging of the physical model by scanning UW detection and two-dimensional signal reconstruction.

The Effect of Welding Energy on the Microstructural and Mechanical Properties of Ultrasonic-Welded Copper Joints.

PubMed

Yang, Jingwei; Cao, Biao; Lu, Qinghua

2017-02-16

The effects of welding energy on the mechanical and microstructural characteristics of ultrasonic-welded pure copper plates were investigated. Complex dynamic recrystallization and grain growth occurred inside the weld zone during ultrasonic welding. At a low welding energy, a thin band of straight weld interfaces was observed and had an ultra-fine grain structure. With an increase in welding energy, the weld interface progressively changed from flat to sinusoidal, and eventually turned into a convoluted wavy pattern, bearing similarities to shear instabilities, as observed in fluid dynamics. The lap shear load of the joints initially increased and then remained stable as the welding energy increased. The tensile characteristics of the joints significantly depended on the development of plastic deformation at the interface. The influence of the microstructure on the hardness was also discussed.

Ultra-Intense Short-Pulse Pair Creation Using the Texas Petawatt Laser

NASA Astrophysics Data System (ADS)

Liang, Edison; Henderson, Alexander; Clarke, Taylor; Taylor, Devin; Chaguine, Petr; Serratto, Kristina; Riley, Nathan; Dyer, Gilliss; Donovan, Michael; Ditmire, Todd

2013-10-01

We report results from the 2012 pair creation experiment using the Texas Petawatt Laser. Up to 1011 positrons per steradian were detected using 100 Joule pulses from the Texas Petawatt Laser to irradiate gold targets, with peak laser intensities up to 1.9 × 1021W/cm2 and pulse durations as short as 130 fs. Positron-to-electron ratios exceeding 20% were measured on some shots. The positron energy, positron yield per unit laser energy, and inferred positron density are significantly higher than those reported in previous experiments. This confirms that, for a given laser energy, higher intensity and shorter pulses irradiating thicker targets are more favorable for pair creation. Narrow-band high-energy positrons up to 23 MeV were observed from thin targets. Supported by DOE Grant DE-SC-0001481 and Rice FIF.

Ultra-high power capabilities in amorphous FePO4 thin films

NASA Astrophysics Data System (ADS)

Gandrud, Knut B.; Nilsen, Ola; Fjellvåg, Helmer

2016-02-01

Record breaking electrochemical properties of FePO4 have been found through investigation of the thickness dependent electrochemical properties of amorphous thin film electrodes. Atomic layer deposition was used for production of thin films of amorphous FePO4 with highly accurate thickness and topography. Electrochemical characterization of these thin film electrodes revealed that the thinner electrodes behave in a pseudocapacitive manner even at high rates of Li+ de/intercalation, which enabled specific powers above 1 MW kg-1 FePO4 to be obtained with minimal capacity loss. In addition, a self-enhancing kinetic effect was observed during cycling enabling more than 10,000 cycles at current rates approaching that of a supercapacitor (11s charge/discharge). The current findings may open for construction of ultra-high power battery electrodes that combines the energy density of batteries with the power capabilities of supercapacitors.

Processing Ultra Wide Band Synthetic Aperture Radar Data with Motion Detectors

NASA Technical Reports Server (NTRS)

Madsen, Soren Norvang

1996-01-01

Several issues makes the processing of ultra wide band (UWB) SAR data acquired from an airborne platform difficult. The character of UWB data invalidates many of the usual SAR batch processing techniques, leading to the application of wavenumber domain type processors...This paper will suggest and evaluate an algorithm which combines a wavenumber domain processing algorithm with a motion compensation procedure which enables motion compensation to be applied as a function of target range and the azimuth angle.

Impulse Response Shaping for Ultra Wide Band SAR in a Circular Flight Path

NASA Technical Reports Server (NTRS)

Jin, Michael Y.

1996-01-01

An ultra wide band SAR (synthetic aperture radar) has potential applications on imaging underground objects. Flying this SAR in a circular flight path is an efficient way to acquire high resolution images from a localized area. This paper characterizes the impulse response of sucha system. The results indicate that to achieve an image with a more uniformed resolution over the entire imaged area, proper weighting coeficients should be applied to both the principle aperture and the complimentary aperture.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

NASA Astrophysics Data System (ADS)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Both optical and electrical characterization confirms our high quality devices, including an ultra-clean interface, a record-high Hall mobility reaching 34,000 cm. 2/Vs, and first observation of Shubnikov–de Haas oscillations. The development of Ohmic contact and fabrication of high quality devices are critical to MoS2 application and studying its intrinsic properties. Therefore, the progress made in this work will facilitate efforts to study novel physical phenomena of MoS2 that were not accessible before.

Elastic superlattices with simultaneously negative effective mass density and shear modulus

NASA Astrophysics Data System (ADS)

Solís-Mora, I. S.; Palomino-Ovando, M. A.; Pérez-Rodríguez, F.

2013-03-01

We investigate the vibrational properties of superlattices with layers of rubber and polyurethane foam, which can be either conventional or auxetic. Phononic dispersion calculations show a second pass band for transverse modes inside the lowest band gap of the longitudinal modes. In such a band, the superlattices behave as a double-negative elastic metamaterial since the effective dynamic mass density and shear modulus are both negative. The pass band is associated to a Fabry-Perot resonance band which turns out to be very narrow as a consequence of the high contrast between the acoustic impedances of the superlattice components.

An investigation into the use of two polyacid-modified composite resins (compomers) and a resin-modified glass poly(alkenoate) cement used to retain orthodontic bands.

PubMed

Williams, P H; Sherriff, M; Ireland, A J

2005-06-01

The aim of this investigation was to determine the effectiveness of a conventional glass poly(alkenoate) cement (Intact) and newer polyacid-modified composite resin cements (Transbond Plus and Ultra Band-Lok) to retain orthodontic bands. In the in vitro part of this study, stainless steel bands were cemented to 240 extracted third molar teeth in three test groups comprising Intact, Transbond Plus and Ultra Band-Lok. The force to deband (N) for all three cements was recorded using an Instron universal testing machine after the following observation periods: 20 minutes and 3, 6 and 12 months. The results indicated that all three cements increased their median force to deband after 12 months. Of the two compomers, Transbondtrade mark Plus demonstrated the highest median force to deband at all four time intervals. In the in vivo part of the study, 30 patients participated in a randomized cross-mouth clinical trial where the molar bands were cemented in place using either Intact or Transbond Plus. Ultra Band-Lok was not used in the clinical part of the study. The results showed there to be no clinically significant difference in band failure rates between the two cements. When patients were asked to score each for taste, there was a significant difference, with the glass poly(alkenoate) cement (Intact) being more acceptable than the polyacid-modified composite Transbond Plus (P < 0.001). No significant differences were observed in the in vitro median force to deband or in vivo band failure rates between the glass poly(alkenoate) cement and the polyacid-modified composite resins. The choice of cementing agent can therefore be made on patient factors, e.g. taste, or operator factors, e.g. ease of handling, cost and shelf life.

High-energy ultra-short pulse thin-disk lasers: new developments and applications

NASA Astrophysics Data System (ADS)

Michel, Knut; Klingebiel, Sandro; Schultze, Marcel; Tesseit, Catherine Y.; Bessing, Robert; Häfner, Matthias; Prinz, Stefan; Sutter, Dirk; Metzger, Thomas

2016-03-01

We report on the latest developments at TRUMPF Scientific Lasers in the field of ultra-short pulse lasers with highest output energies and powers. All systems are based on the mature and industrialized thin-disk technology of TRUMPF. Thin Yb:YAG disks provide a reliable and efficient solution for power and energy scaling to Joule- and kW-class picosecond laser systems. Due to its efficient one dimensional heat removal, the thin-disk exhibits low distortions and thermal lensing even when pumped under extremely high pump power densities of 10kW/cm². Currently TRUMPF Scientific Lasers develops regenerative amplifiers with highest average powers, optical parametric amplifiers and synchronization schemes. The first few-ps kHz multi-mJ thin-disk regenerative amplifier based on the TRUMPF thindisk technology was developed at the LMU Munich in 20081. Since the average power and energy have continuously been increased, reaching more than 300W (10kHz repetition rate) and 200mJ (1kHz repetition rate) at pulse durations below 2ps. First experiments have shown that the current thin-disk technology supports ultra-short pulse laser solutions >1kW of average power. Based on few-picosecond thin-disk regenerative amplifiers few-cycle optical parametric chirped pulse amplifiers (OPCPA) can be realized. These systems have proven to be the only method for scaling few-cycle pulses to the multi-mJ energy level. OPA based few-cycle systems will allow for many applications such as attosecond spectroscopy, THz spectroscopy and imaging, laser wake field acceleration, table-top few-fs accelerators and laser-driven coherent X-ray undulator sources. Furthermore, high-energy picosecond sources can directly be used for a variety of applications such as X-ray generation or in atmospheric research.

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

PubMed

Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

2017-10-06

Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

Molecular dynamics simulations of disjoining pressure effects in ultra-thin water films on a metal surface

NASA Astrophysics Data System (ADS)

Hu, Han; Sun, Ying

2013-11-01

Disjoining pressure, the excess pressure in an ultra-thin liquid film as a result of van der Waals interactions, is important in lubrication, wetting, flow boiling, and thin film evaporation. The classic theory of disjoining pressure is developed for simple monoatomic liquids. However, real world applications often utilize water, a polar liquid, for which fundamental understanding of disjoining pressure is lacking. In the present study, molecular dynamics (MD) simulations are used to gain insights into the effect of disjoining pressure in a water thin film. Our MD models were firstly validated against Derjaguin's experiments on gold-gold interactions across a water film and then verified against disjoining pressure in an argon thin film using the Lennard-Jones potential. Next, a water thin film adsorbed on a gold surface was simulated to examine the change of vapor pressure with film thickness. The results agree well with the classic theory of disjoining pressure, which implies that the polar nature of water molecules does not play an important role. Finally, the effects of disjoining pressure on thin film evaporation in nanoporous membrane and on bubble nucleation are discussed.

Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

2015-12-01

In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

Stress analysis of ultra-thin silicon chip-on-foil electronic assembly under bending

NASA Astrophysics Data System (ADS)

Wacker, Nicoleta; Richter, Harald; Hoang, Tu; Gazdzicki, Pawel; Schulze, Mathias; Angelopoulos, Evangelos A.; Hassan, Mahadi-Ul; Burghartz, Joachim N.

2014-09-01

In this paper we investigate the bending-induced uniaxial stress at the top of ultra-thin (thickness \\leqslant 20 μm) single-crystal silicon (Si) chips adhesively attached with the aid of an epoxy glue to soft polymeric substrate through combined theoretical and experimental methods. Stress is first determined analytically and numerically using dedicated models. The theoretical results are validated experimentally through piezoresistive measurements performed on complementary metal-oxide-semiconductor (CMOS) transistors built on specially designed chips, and through micro-Raman spectroscopy investigation. Stress analysis of strained ultra-thin chips with CMOS circuitry is crucial, not only for the accurate evaluation of the piezoresistive behavior of the built-in devices and circuits, but also for reliability and deformability analysis. The results reveal an uneven bending-induced stress distribution at the top of the Si-chip that decreases from the central area towards the chip's edges along the bending direction, and increases towards the other edges. Near these edges, stress can reach very high values, facilitating the emergence of cracks causing ultimate chip failure.

Numerical experiments on evaporation and explosive boiling of ultra-thin liquid argon film on aluminum nanostructure substrate

NASA Astrophysics Data System (ADS)

Wang, Weidong; Zhang, Haiyan; Tian, Conghui; Meng, Xiaojie

2015-04-01

Evaporation and explosive boiling of ultra-thin liquid film are of great significant fundamental importance for both science and engineering applications. The evaporation and explosive boiling of ultra-thin liquid film absorbed on an aluminum nanostructure solid wall are investigated by means of molecular dynamics simulations. The simulated system consists of three regions: liquid argon, vapor argon, and an aluminum substrate decorated with nanostructures of different heights. Those simulations begin with an initial configuration for the complex liquid-vapor-solid system, followed by an equilibrating system at 90 K, and conclude with two different jump temperatures, including 150 and 310 K which are far beyond the critical temperature. The space and time dependences of temperature, pressure, density number, and net evaporation rate are monitored to investigate the phase transition process on a flat surface with and without nanostructures. The simulation results reveal that the nanostructures are of great help to raise the heat transfer efficiency and that evaporation rate increases with the nanostructures' height in a certain range.

Numerical experiments on evaporation and explosive boiling of ultra-thin liquid argon film on aluminum nanostructure substrate.

PubMed

Wang, Weidong; Zhang, Haiyan; Tian, Conghui; Meng, Xiaojie

2015-01-01

Evaporation and explosive boiling of ultra-thin liquid film are of great significant fundamental importance for both science and engineering applications. The evaporation and explosive boiling of ultra-thin liquid film absorbed on an aluminum nanostructure solid wall are investigated by means of molecular dynamics simulations. The simulated system consists of three regions: liquid argon, vapor argon, and an aluminum substrate decorated with nanostructures of different heights. Those simulations begin with an initial configuration for the complex liquid-vapor-solid system, followed by an equilibrating system at 90 K, and conclude with two different jump temperatures, including 150 and 310 K which are far beyond the critical temperature. The space and time dependences of temperature, pressure, density number, and net evaporation rate are monitored to investigate the phase transition process on a flat surface with and without nanostructures. The simulation results reveal that the nanostructures are of great help to raise the heat transfer efficiency and that evaporation rate increases with the nanostructures' height in a certain range.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bieniek, Bjoern; Hofmann, Oliver T.; Institut für Festkörperphysik, TU Graz, 8010 Graz

2015-03-30

We investigate the atomic and electronic structure of ultra-thin ZnO films (1 to 4 layers) on the (111) surfaces of Ag, Cu, Pd, Pt, Ni, and Rh by means of density-functional theory. The ZnO monolayer is found to adopt an α-BN structure on the metal substrates with coincidence structures in good agreement with experiment. Thicker ZnO layers change into a wurtzite structure. The films exhibit a strong corrugation, which can be smoothed by hydrogen (H) adsorption. An H over-layer with 50% coverage is formed at chemical potentials that range from low to ultra-high vacuum H{sub 2} pressures. For the Agmore » substrate, both α-BN and wurtzite ZnO films are accessible in this pressure range, while for Cu, Pd, Pt, Rh, and Ni wurtzite films are favored. The surface structure and the density of states of these H passivated ZnO thin films agree well with those of the bulk ZnO(0001{sup ¯})-2×1-H surface.« less

Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2SiS 4 and Fe 2GeS 4 Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orefuwa, Samuel A.; Lai, Cheng-Yu; Dobson, Kevin D.

2014-05-12

Fe 2SiS 4 and Fe 2GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2SiS 4 or Fe 2GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2SiS 4 and Fe 2GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Femore » 2SiS 4 and Fe 2GeS 4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2SiS 4 and Fe 2GeS 4 as solar absorber material is presented.« less

Ultra-thin passivating film induced by vinylene carbonate on highly oriented pyrolytic graphite negative electrode in lithium-ion cell

NASA Astrophysics Data System (ADS)

Matsuoka, O.; Hiwara, A.; Omi, T.; Toriida, M.; Hayashi, T.; Tanaka, C.; Saito, Y.; Ishida, T.; Tan, H.; Ono, S. S.; Yamamoto, S.

We investigated the influence of vinylene carbonate, as an additive molecule, on the decomposition phenomena of electrolyte solution [ethylene carbonate (EC)—ethyl methyl carbonate (EMC) (1:2 by volume) containing 1 M LiPF 6] on a highly oriented pyrolytic graphite (HOPG) negative electrode by using cyclic voltammetry (CV) and atomic force microscopy (AFM). Vinylene carbonate deactivated reactive sites (e.g. radicals and oxides at the defects and the edge of carbon layer) on the cleaved surface of the HOPG negative electrode, and prevented further decomposition of the other solvents there. Further, vinylene carbonate induced an ultra-thin film (less than 1.0 nm in thickness) on the terrace of the basal plane of the HOPG negative electrode, and this film suppressed the decomposition of electrolyte solution on the terraces of the basal plane. We consider that this ultra-thin passivating film is composed of a reduction product of vinylene carbonate (VC), and might have a polymer structure. These induced effects might explain how VC improves the life performance of lithium-ion cells.

Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

NASA Astrophysics Data System (ADS)

Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo; Kanellos, George T.; Fitsios, Dimitrios; Pleros, Nikos

2013-02-01

We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

Performance of ultra-thin whitetopping (UTW) in Oklahoma.

DOT National Transportation Integrated Search

2010-12-01

With the current level of deterioration of pavements in Oklahoma and the United States a satisfactory repai : technique that is economical and can be applied rapidly while resisting a significant volume of traffic is becomin : important. Thin concret...

Design of dual band FSS by using quadruple L-slot technique

NASA Astrophysics Data System (ADS)

Fauzi, Noor Azamiah Md; Aziz, Mohamad Zoinol Abidin Abd.; Said, Maizatul Alice Meor; Othman, Mohd Azlishah; Ahmad, Badrul Hisham; Malek, Mohd Fareq Abd

2015-05-01

This paper presents a new design of dual band frequency selective surface (FSS) for band pass microwave transmission application. FSS can be used on energy saving glass to improve the transmission of wireless communication signals through the glass. The microwave signal will be attenuate when propagate throughout the different structure such as building. Therefore, some of the wireless communication system cannot be used in the optimum performance. The aim of this paper is designed, simulated and analyzed the new dual band FSS structure for microwave transmission. This design is based on a quadruple L slot combined with cross slot to produce pass band at 900 MHz and 2.4 GHz. The vertical of pair inverse L slot is used as the band pass for the frequency of 2.4GHz. While, the horizontal of pair inverse L slot is used as the band pass at frequency 900MHz. This design is simulated and analyzed by using Computer Simulation Technology (CST) Microwave Studio (MWS) software. The characteristics of the transmission (S21) and reflection (S11) of the dual band FSS were simulater and analyzed. The bandwidth of the first band is 118.91MHz which covered the frequency range from 833.4MHz until 952.31MHz. Meanwhile, the bandwidth for the second band is 358.84MHz which covered the frequency range from 2.1475GHz until 2.5063GHz. The resonance/center frequency of this design is obtained at 900MHz with a 26.902dB return loss and 2.37GHz with 28.506dB a return loss. This FSS is suitable as microwave filter for GSM900 and WLAN 2.4GHz application.

Flexural wave suppression by an elastic metamaterial beam with zero bending stiffness

NASA Astrophysics Data System (ADS)

Zhang, Yong Yan; Wu, Jiu Hui; Hu, Guang Zhong; Wang, Yu Chun

2017-04-01

In this paper, different from Bragg scattering or local resonance mechanisms, a novel mechanism of an ultra-low-frequency broadband for flexural waves propagating in a one-dimensional elastic metamaterial beam with zero bending stiffness is proposed, which consists of periodic hinge-linked blocks. The dispersion relationship of this kind of metamaterial beam is derived and analyzed, from which we find that these hinge-linked blocks can produce the zero bending stiffness. Thus, the flexural waves within the metamaterial beam can be suppressed, and an ultra-low-frequency wide band-gap is formed in which the first branch is generated by the zero bending spring and the second branch by the negative velocity of the metamaterial beam. Numerical results show that the elastic metamaterial beams with zero bending stiffness can indeed generate an ultra-low-frequency wide band gap even starting from almost zero frequency, such as from 0 Hz to 525 Hz in our structure. Therefore, the puzzle of realizing an ultra-low-frequency broadband of flexural waves may have been better solved, which could be applied in controlling ultra-low-frequency elastic waves in engineering.

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

NASA Technical Reports Server (NTRS)

Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

2007-01-01

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Multispectral Imager With Improved Filter Wheel and Optics

NASA Technical Reports Server (NTRS)

Bremer, James C.

2007-01-01

Figure 1 schematically depicts an improved multispectral imaging system of the type that utilizes a filter wheel that contains multiple discrete narrow-band-pass filters and that is rotated at a constant high speed to acquire images in rapid succession in the corresponding spectral bands. The improvement, relative to prior systems of this type, consists of the measures taken to prevent the exposure of a focal-plane array (FPA) of photodetectors to light in more than one spectral band at any given time and to prevent exposure of the array to any light during readout. In prior systems, these measures have included, variously the use of mechanical shutters or the incorporation of wide opaque sectors (equivalent to mechanical shutters) into filter wheels. These measures introduce substantial dead times into each operating cycle intervals during which image information cannot be collected and thus incoming light is wasted. In contrast, the present improved design does not involve shutters or wide opaque sectors, and it reduces dead times substantially. The improved multispectral imaging system is preceded by an afocal telescope and includes a filter wheel positioned so that its rotation brings each filter, in its turn, into the exit pupil of the telescope. The filter wheel contains an even number of narrow-band-pass filters separated by narrow, spoke-like opaque sectors. The geometric width of each filter exceeds the cross-sectional width of the light beam coming out of the telescope. The light transmitted by the sequence of narrow-band filters is incident on a dichroic beam splitter that reflects in a broad shorter-wavelength spectral band that contains half of the narrow bands and transmits in a broad longer-wavelength spectral band that contains the other half of the narrow spectral bands. The filters are arranged on the wheel so that if the pass band of a given filter is in the reflection band of the dichroic beam splitter, then the pass band of the adjacent filter is in the longer-wavelength transmission band of the dichroic beam splitter (see Figure 2). Each of the two optical paths downstream of the dichroic beam splitter contains an additional broad-band-pass filter: The filter in the path of the light transmitted by the dichroic beam splitter transmits and attenuates in the same bands that are transmitted and reflected, respectively, by the beam splitter; the filter in the path of the light reflected by the dichroic beam splitter transmits and attenuates in the same bands that are reflected and transmitted, respectively, by the dichroic beam splitter. In each of these paths, the filtered light is focused onto an FPA. As the filter wheel rotates at a constant angular speed, its shaft angle is monitored, and the shaft-angle signal is used to synchronize the exposure times of the two FPAs. When a single narrowband-pass filter on the wheel occupies the entire cross section of the beam of light coming out of the telescope, the spectrum of light that reaches the dichroic beam splitter lies entirely within the pass band of that filter. Therefore, the beam in its entirety is either transmitted by the dichroic beam splitter and imaged on the longer-wavelength FPA or reflected by the beam splitter and imaged onto the shorter-wavelength FPA.

All-dielectric metamaterial frequency selective surface based on spatial arrangement ceramic resonators

NASA Astrophysics Data System (ADS)

Li, Liyang; Wang, Jun; Feng, Mingde; Ma, Hua; Wang, Jiafu; Du, Hongliang; Qu, Shaobo

In this paper, we demonstrate a method of designing all-dielectric metamaterial frequency selective surface (FSS) with ceramic resonators in spatial arrangement. Compared with the traditional way, spatial arrangement provides a flexible way to handle the permutation and combination of different ceramic resonators. With this method, the resonance response can be adjusted easily to achieve pass/stop band effects. As an example, a stop band spatial arrangement all-dielectric metamaterial FSS is designed. Its working band is in 11.65-12.23GHz. By adjusting permittivity and geometrical parameters of ceramic resonators, we can easily modulate the resonances, band pass or band stop characteristic, as well as the working band.

Stabilized Alkali-Metal Ultraviolet-Band-Pass Filters

NASA Technical Reports Server (NTRS)

Mardesich, Nick; Fraschetti, George A.; Mccann, Timothy; Mayall, Sherwood D.; Dunn, Donald E.; Trauger, John T.

1995-01-01

Layers of bismuth 5 to 10 angstrom thick incorporated into alkali-metal ultraviolet-band-pass optical filters by use of advanced fabrication techniques. In new filters layer of bismuth helps to reduce surface migration of sodium. Sodium layer made more stable and decreased tendency to form pinholes by migration.

ACTS Ka-band Propagation Research in a Spatially Diversified Network with Two USAT Ground Stations

NASA Technical Reports Server (NTRS)

Kalu, Alex; Acousta, R.; Durand, S.; Emrich, Carol; Ventre, G.; Wilson, W.

1999-01-01

Congestion in the radio spectrum below 18 GHz is stimulating greater interest in the Ka (20/30 GHz) frequency band. Transmission at these shorter wavelengths is greatly influenced by rain resulting in signal attenuation and decreased link availability. The size and projected cost of Ultra Small Aperture Terminals (USATS) make site diversity methodology attractive for rain fade compensation. Separation distances between terminals must be small to be of interest commercially. This study measures diversity gain at a separation distance <5 km and investigates utilization of S-band weather radar reflectivity in predicting diversity gain. Two USAT ground stations, separated by 2.43 km for spatial diversity, received a continuous Ka-band tone sent from NASA Glenn Research Center via the Advanced Communications Technology Satellite (ACTS) steerable antenna beam. Received signal power and rainfall were measured, and Weather Surveillance Radar-1998 Doppler (WSR-88D) data were obtained as a measure of precipitation along the USAT-to-ACTS slant path. Signal attenuation was compared for the two sites, and diversity gain was calculated for fades measured on eleven days. Correlation of WSR-88D S-band reflectivity with measured Ka-band attenuation consisted of locating radar volume elements along each slant path, converting reflectivity to Ka-band attenuation with rain rate calculation as an intermediate step. Specific attenuation for each associated path segment was summed, resulting in total attenuation along the slant path. Derived Ka-band attenuation did not correlate closely with empirical data (r = 0.239), but a measured signal fade could be matched with an increase in radar reflectivity in all fade events. Applying a low pass filter to radar reflectivity prior to deriving Ka-band attenuation improved the correlation between measured and derived signal attenuation (r = 0.733). Results indicate that site diversity at small separation distances is a viable means of rain fade compensation, and that existing models underestimate diversity gain for a subtropical climate such as Florida. Also, filtered WSR-88D reflectivity can be used for optimizing diversity terminal placement by comparing derived Ka- band attenuation between the diversity sites.

Deep Keck u-Band Imaging of the Hubble Ultra Deep Field: A Catalog of z ~ 3 Lyman Break Galaxies

NASA Astrophysics Data System (ADS)

Rafelski, Marc; Wolfe, Arthur M.; Cooke, Jeff; Chen, Hsiao-Wen; Armandroff, Taft E.; Wirth, Gregory D.

2009-10-01

We present a sample of 407 z ~ 3 Lyman break galaxies (LBGs) to a limiting isophotal u-band magnitude of 27.6 mag in the Hubble Ultra Deep Field. The LBGs are selected using a combination of photometric redshifts and the u-band drop-out technique enabled by the introduction of an extremely deep u-band image obtained with the Keck I telescope and the blue channel of the Low Resolution Imaging Spectrometer. The Keck u-band image, totaling 9 hr of integration time, has a 1σ depth of 30.7 mag arcsec-2, making it one of the most sensitive u-band images ever obtained. The u-band image also substantially improves the accuracy of photometric redshift measurements of ~50% of the z ~ 3 LBGs, significantly reducing the traditional degeneracy of colors between z ~ 3 and z ~ 0.2 galaxies. This sample provides the most sensitive, high-resolution multi-filter imaging of reliably identified z ~ 3 LBGs for morphological studies of galaxy formation and evolution and the star formation efficiency of gas at high redshift.

On the role of ultra-thin oxide cathode synthesis on the functionality of micro-solid oxide fuel cells: Structure, stress engineering and in situ observation of fuel cell membranes during operation

NASA Astrophysics Data System (ADS)

Lai, Bo-Kuai; Kerman, Kian; Ramanathan, Shriram

Microstructure and stresses in dense La 0.6Sr 0.4Co 0.8Fe 0.2O 3 (LSCF) ultra-thin films have been investigated to increase the physical thickness of crack-free cathodes and active area of thermo-mechanically robust micro-solid oxide fuel cell (μSOFC) membranes. Processing protocols employ low deposition rates to create a highly granular nanocrystalline microstructure in LSCF thin films and high substrate temperatures to produce linear temperature-dependent stress evolution that is dominated by compressive stresses in μSOFC membranes. Insight and trade-off on the synthesis are revealed by probing microstructure evolution and electrical conductivity in LSCF thin films, in addition to in situ monitoring of membrane deformation while measuring μSOFC performance at varying temperatures. From these studies, we were able to successfully fabricate failure-resistant square μSOFC (LSCF/YSZ/Pt) membranes with width of 250 μm and crack-free cathodes with thickness of ∼70 nm. Peak power density of ∼120 mW cm -2 and open circuit voltage of ∼0.6 V at 560 °C were achieved on a μSOFC array chip containing ten such membranes. Mechanisms affecting fuel cell performance are discussed. Our results provide fundamental insight to pathways of microstructure and stress engineering of ultra-thin, dense oxide cathodes and μSOFC membranes.

Tailoring of optical band gap by varying Zn content in Cd{sub 1-x}Zn{sub x}S thin films prepared by spray pyrolysis method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vipin, E-mail: vipinkumar28@yahoo.co.in; Sharma, D. K.; Agrawal, Sonalika

Cd{sub 1-X}Zn{sub X}S thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterized by UV-VIS spectrophotometer. The optical band gap of the films has been studied by transmission spectra in wavelength range 325-600nm. It has been observed that optical band gap increases with increasing zinc concentration. The optical band gap of these thin films varies from 2.59 to 3.20eV with increasing Zn content.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages

NASA Astrophysics Data System (ADS)

Pastore, I.; Poplausks, R.; Apsite, I.; Pastare, I.; Lombardi, F.; Erts, D.

2011-06-01

Formation of ultrathin anodised aluminium oxide (AAO) membranes with high aspect ratio by Al anodization in sulphuric and oxalic acids at low potentials was investigated. Low anodization potentials ensure slow electrochemical reaction speeds and formation of AAO membranes with pore diameter and thickness below 20 nm and 70 nm respectively. Minimum time necessary for formation of continuous AAO membranes was determined. AAO membrane pore surface was covered with polymer Paraloid B72TM to transport it to the selected substrate. The fabricated ultra thin AAO membranes could be used to fabricate nanodot arrays on different surfaces.

Performance regeneration of InGaZnO transistors with ultra-thin channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Binglei; Li, He; Zhang, Xijian, E-mail: zhangxijian@sdu.edu.cn, E-mail: songam@sdu.edu.cn

2015-03-02

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devicesmore » was also studied over a four month period.« less

Specific heat measurement set-up for quench condensed thin superconducting films.

PubMed

Poran, Shachaf; Molina-Ruiz, Manel; Gérardin, Anne; Frydman, Aviad; Bourgeois, Olivier

2014-05-01

We present a set-up designed for the measurement of specific heat of very thin or ultra-thin quench condensed superconducting films. In an ultra-high vacuum chamber, materials of interest can be thermally evaporated directly on a silicon membrane regulated in temperature from 1.4 K to 10 K. On this membrane, a heater and a thermometer are lithographically fabricated, allowing the measurement of heat capacity of the quench condensed layers. This apparatus permits the simultaneous thermal and electrical characterization of successively deposited layers in situ without exposing the deposited materials to room temperature or atmospheric conditions, both being irreversibly harmful to the samples. This system can be used to study specific heat signatures of phase transitions through the superconductor to insulator transition of quench condensed films.

Thermally induced effect on sub-band gap absorption in Ag doped CdSe thin films

NASA Astrophysics Data System (ADS)

Kaur, Jagdish; Sharma, Kriti; Bharti, Shivani; Tripathi, S. K.

2015-05-01

Thin films of Ag doped CdSe have been prepared by thermal evaporation using inert gas condensation (IGC) method taking Argon as inert gas. The prepared thin films are annealed at 363 K for one hour. The sub-band gap absorption spectra in the as deposited and annealed thin films have been studied using constant photocurrent method (CPM). The absorption coefficient in the sub-band gap region is described by an Urbach tail in both as deposited and annealed thin films. The value of Urbach energy and number density of trap states have been calculated from the absorption coefficient in the sub-band gap region which have been found to increase after annealing treatment indicating increase in disorderness in the lattice. The energy distribution of the occupied density of states below Fermi level has also been studied using derivative procedure of absorption coefficient.

A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement

PubMed Central

Zhang, Guodong; Zhao, Yulong; Zhao, Yun; Wang, Xinchen; Ren, Wei; Li, Hui; Zhao, You

2018-01-01

With the development of energetic materials (EMs) and microelectromechanical systems (MEMS) initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor’s sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm × 0.1 mm × 2 μm and copper electrodes of 2 μm thick are sputtered sequentially on the substrate, and a 25 μm thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa−1. The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size. PMID:29494519

AN INTEGRAL EQUATION REPRESENTATION OF WIDE-BAND ELECTROMAGNETIC SCATTERING BY THIN SHEETS

EPA Science Inventory

An efficient, accurate numerical modeling scheme has been developed, based on the integral equation solution to compute electromagnetic (EM) responses of thin sheets over a wide frequency band. The thin-sheet approach is useful for simulating the EM response of a fracture system ...

Increasing capacity of baseband digital data communication networks

DOEpatents

Frankel, Robert S.; Herman, Alexander

1985-01-01

This invention provides broadband network capabilities for baseband digital collision detection transceiver equipment for communication between a plurality of data stations by affording simultaneous transmission of multiple channels over a broadband pass transmission link such as a coaxial cable. Thus, a fundamental carrier wave is transmitted on said link, received at local data stations and used to detect signals on different baseband channels for reception. For transmission the carrier wave typically is used for segregating a plurality of at least two transmission channels into typically single sideband upper and lower pass bands of baseband bandwidth capability adequately separated with guard bands to permit simple separation for receiving by means of pass band filters, etc.

Increasing capacity of baseband digital data communication networks

DOEpatents

Frankel, R.S.; Herman, A.

This invention provides broadbank network capabilities for baseband digital collision detection transceiver equipment for communication between a plurality of data stations by affording simultaneous transmission of multiple channels over a broadband pass transmission link such as a coaxial cable. Thus, a fundamental carrier wave is transmitted on said link, received at local data stations and used to detect signals on different baseband channels for reception. For transmission the carrier wave typically is used for segregating a plurality of at least two transmission channels into typically single sideband upper and lower pass bands of baseband bandwidth capability adequately separated with guard bands to permit simple separation for receiving by means of pass band filters, etc.

Method and apparatus for coating thin foil with a boron coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacy, Jeffrey L.

An apparatus and a process is disclosed for applying a boron coating to a thin foil. Preferably, the process is a continuous, in-line process for applying a coating to a thin foil comprising wrapping the foil around a rotating and translating mandrel, cleaning the foil with glow discharge in an etching chamber as the mandrel with the foil moves through the chamber, sputtering the foil with boron carbide in a sputtering chamber as the mandrel moves through the sputtering chamber, and unwinding the foil off the mandrel after it has been coated. The apparatus for applying a coating to amore » thin foil comprises an elongated mandrel. Foil preferably passes from a reel to the mandrel by passing through a seal near the initial portion of an etching chamber. The mandrel has a translation drive system for moving the mandrel forward and a rotational drive system for rotating mandrel as it moves forward. The etching chamber utilizes glow discharge on a surface of the foil as the mandrel moves through said etching chamber. A sputtering chamber, downstream of the etching chamber, applies a thin layer comprising boron onto the surface of the foil as said mandrel moves through said sputtering chamber. Preferably, the coated foil passes from the mandrel to a second reel by passing through a seal near the terminal portion of the sputtering chamber.« less

Photoelectron spectroscopic studies of ultra-thin CuPc layers on a Si(111)-(√3 × √3)R30°-B surface

NASA Astrophysics Data System (ADS)

Menzli, S.; Laribi, A.; Mrezguia, H.; Arbi, I.; Akremi, A.; Chefi, C.; Chérioux, F.; Palmino, F.

2016-12-01

The adsorption of copper phthalocyanine (CuPc) molecules on Si(111)-(√3 × √3)R30°-B surface is investigated at room temperature under ultra-high vacuum. Crystallographic, chemical and electronic properties of the interface are investigated by low energy electron diffraction (LEED), ultraviolet and X-ray photoemission spectroscopies (UPS, XPS) and X-ray photoemission diffraction (XPD). LEED and XPD results shed light on the growth mechanism of CuPc on this substrate. At one monolayer coverage the growth mode was characterized by the formation of crystalline 3D nanoislands. The molecular packing deduced from this study appears very close to the one of the bulk CuPc α phase. The 3D islands are formed by molecules aligned in a standing manner. XPS core level spectra of the substrate reveal that there is no discernible chemical interaction between molecules and substrate. However there is charge transfer from molecules to the substrate. During the growth, the work function (WF) was found to decrease from 4.50 eV for the clean substrate to 3.70 eV for the highest coverage (30 monolayers). Within a thickness of two monolayers deposition, an interface dipole of 0.50 eV was found. A substrate band bending of 0.25 eV was deduced over all the range of exposure. UPS spectra indicate the existence of a band bending of the highest occupied molecular orbital (HOMO) of 0.30 eV. The changes in the work function, in the Fermi level position and in the onset of the molecular HOMO state have been used to determine the energy level alignment at the interface.

Ariel 6 measurements of ultra-heavy cosmic ray fluxes in the region 34 or = Z or = 48

NASA Technical Reports Server (NTRS)

Fowler, P. H.; Masheder, M. R. W.; Moses, R. T.; Walker, R. N. F.; Worley, A.; Gay, A. M.

1985-01-01

The Ariel VI satellite was launched by NASA on a Scout rocket on 3rd June 1979 from Wallops Island, Virginia, USA, into a near circular 625 km orbit inclined at 55 deg. It carried a spherical cosmic ray detector designed by a group from Bristol University. A spherical aluminum vessel of diameter 75 cm contains a gas scintillation mixture and a thin spherical shell of Pilot 425 plastic, and forms a single optical cavity viewed by 16 photomultipliers. Particle tracks through the detector may be characterized by their impact parameter p and by whether or not they pass through the cup of plastic scintillator placed between the sphere and the spacecraft body (referred to below as the Anti-Coincidence Detector or ACD). Individual particle charges are determined by separately measuring the gas scintillation and the Cerenkov emission from the plastic shell. This is possible because of the quite different distribution in time of these emissions.

Stereo Imaging Miniature Endoscope with Single Imaging Chip and Conjugated Multi-Bandpass Filters

NASA Technical Reports Server (NTRS)

Shahinian, Hrayr Karnig (Inventor); Bae, Youngsam (Inventor); White, Victor E. (Inventor); Shcheglov, Kirill V. (Inventor); Manohara, Harish M. (Inventor); Kowalczyk, Robert S. (Inventor)

2018-01-01

A dual objective endoscope for insertion into a cavity of a body for providing a stereoscopic image of a region of interest inside of the body including an imaging device at the distal end for obtaining optical images of the region of interest (ROI), and processing the optical images for forming video signals for wired and/or wireless transmission and display of 3D images on a rendering device. The imaging device includes a focal plane detector array (FPA) for obtaining the optical images of the ROI, and processing circuits behind the FPA. The processing circuits convert the optical images into the video signals. The imaging device includes right and left pupil for receiving a right and left images through a right and left conjugated multi-band pass filters. Illuminators illuminate the ROI through a multi-band pass filter having three right and three left pass bands that are matched to the right and left conjugated multi-band pass filters. A full color image is collected after three or six sequential illuminations with the red, green and blue lights.

Construction and performance of ultra thin asphalt friction course

DOT National Transportation Integrated Search

1997-09-01

The Novachip process, also known as ultrathin friction course, was developed in France in 1986. The process utilizes a single piece of equipment to place a thin, gap-graded hot mix asphalt (HMA) onto a relatively thick layer of polymer modified aspha...

Thin liquid sheet target capabilities for ultra-intense laser acceleration of ions at a kHz repetition rate

NASA Astrophysics Data System (ADS)

Klim, Adam; Morrison, J. T.; Orban, C.; Feister, S.; Ngirmang, G. K.; Smith, J.; Frische, K.; Peterson, A. C.; Chowdhury, E. A.; Freeman, R. R.; Roquemore, W. M.

2016-10-01

The success of laser-accelerated ion experiments depends crucially on a number of factors including how thin the targets can be created. We present experimental results demonstrating extremely thin (under 200 nm) water sheet targets that can be used for ultra-intense laser-accelerated ion experiments conducted at the Air Force Research Laboratory at Wright-Patterson Air Force Base. Importantly, these experiments operate at a kHz repetition rate and the recovery time of the liquid targets is fast enough to allow the laser to interact with a refreshed, thin target on every shot. We present results from liquid water targets which are useful for proton acceleration experiments via the mechanism of Target Normal Sheath Acceleration (TNSA). In future work, we will create thin sheets from deuterated water in order to perform laser-accelerated deuteron experiments. This research was sponsored by the Quantum and Non-Equilibrium Processes Division of the AFOSR, under the management of Dr. Enrique Parra, and support from the DOD HPCMP Internship Program.

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-05-15

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performedmore » by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.« less

Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

Treesearch

Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

2014-01-01

Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lad, Robert J.

1999-12-14

This project focused on three different aspects of oxide thin film systems: (1) Model metal/oxide and oxide/oxide interface studies were carried out by depositing ultra-thin metal (Al, K, Mg) and oxide (MgO, AlO{sub x}) films on TiO{sub 2}, NiO and {alpha}-Al{sub 2}O{sub 3} single crystal oxide substrates. (2) Electron cyclotron resonance (ECR) oxygen plasma deposition was used to fabricate AlO{sub 3} and ZrO{sub 2} films on sapphire substrates, and film growth mechanisms and structural characteristics were investigated. (3) The friction and wear characteristics of ZrO{sub 2} films on sapphire substrates in unlubricated sliding contact were studied and correlated with filmmore » microstructure. In these studies, thin film and interfacial regions were characterized using diffraction (RHEED, LEED, XRD), electron spectroscopies (XPS, UPS, AES), microscopy (AFM) and tribology instruments (pin-on-disk, friction microprobe, and scratch tester). By precise control of thin film microstructure, an increased understanding of the structural and chemical stability of interface regions and tribological performance of ultra-thin oxide films was achieved in these important ceramic systems.« less

Thin liquid sheet target capabilities for ultra-intense laser acceleration of ions at a kHz repetition rate

NASA Astrophysics Data System (ADS)

Klim, Adam; Morrison, J.; Orban, C.; Chowdhury, E.; Frische, K.; Feister, S.; Roquemore, M.

2017-10-01

The success of laser-accelerated ion experiments depends crucially on a number of factors including how thin the targets can be created. We present experimental results demonstrating extremely thin (under 200 nm) glycol sheet targets that can be used for ultra-intense laser-accelerated ion experiments conducted at the Air Force Research Laboratory at Wright-Patterson Air Force Base. Importantly, these experiments operate at a kHz repetition rate and the recovery time of the liquid targets is fast enough to allow the laser to interact with a refreshed, thin target on every shot. These thin targets can be used to produce energetic electrons, light ions, and neutrons as well as x-rays, we present results from liquid glycol targets which are useful for proton acceleration experiments via the mechanism of Target Normal Sheath Acceleration (TNSA). In future work, we will create thin sheets from deuterated water in order to perform laser-accelerated deuteron experiments. This research was sponsored by the Quantum and Non-Equilibrium Processes Division of the AFOSR, under the management of Dr. Enrique Parra, and support from the DOD HPCMP Internship Program.

Ultra-broadband and efficient surface plasmon polariton launching through metallic nanoslits of subwavelength period

PubMed Central

Li, Guangyuan; Zhang, Jiasen

2014-01-01

Ultra-broadband, efficient and unidirectional surface plasmon polariton (SPP) launching is of great concern in plasmonic devices and circuits. To address this challenge, a novel method adopting deep-subwavelength slits of subwavelength period (λSPP/4 ~ λSPP/3) in a thick metal film and under backside illumination is proposed. A new band pattern featuring broadband and wide angular characteristics, which is due to the coupling of the zeroth-order SPP resonance at the superstrate–metal interface and the first-order SPP resonance at the metal–substrate interface, is observed for the first time in the dispersion diagram. Unidirectional SPP launching efficiency of ~50%, ultra-broad bandwidth of up to 780 nm, covering the entire optical fiber communication bands, and relatively wide angular range of 7° are achieved. This remarkable efficient, ultra-broadband and wide angular performance is demonstrated by carefully designed experiments in the near infrared regime, showing good agreement with numerical results. PMID:25081812

Ultra-broadband and efficient surface plasmon polariton launching through metallic nanoslits of subwavelength period.

PubMed

Li, Guangyuan; Zhang, Jiasen

2014-08-01

Ultra-broadband, efficient and unidirectional surface plasmon polariton (SPP) launching is of great concern in plasmonic devices and circuits. To address this challenge, a novel method adopting deep-subwavelength slits of subwavelength period (λSPP/4 ~ λSPP/3) in a thick metal film and under backside illumination is proposed. A new band pattern featuring broadband and wide angular characteristics, which is due to the coupling of the zeroth-order SPP resonance at the superstrate-metal interface and the first-order SPP resonance at the metal-substrate interface, is observed for the first time in the dispersion diagram. Unidirectional SPP launching efficiency of ~50%, ultra-broad bandwidth of up to 780 nm, covering the entire optical fiber communication bands, and relatively wide angular range of 7° are achieved. This remarkable efficient, ultra-broadband and wide angular performance is demonstrated by carefully designed experiments in the near infrared regime, showing good agreement with numerical results.

Design of a broadband band-pass filter with notch-band using new models of coupled transmission lines.

PubMed

Daryasafar, Navid; Baghbani, Somaye; Moghaddasi, Mohammad Naser; Sadeghzade, Ramezanali

2014-01-01

We intend to design a broadband band-pass filter with notch-band, which uses coupled transmission lines in the structure, using new models of coupled transmission lines. In order to realize and present the new model, first, previous models will be simulated in the ADS program. Then, according to the change of their equations and consequently change of basic parameters of these models, optimization and dependency among these parameters and also their frequency response are attended and results of these changes in order to design a new filter are converged.

Lighter-Than-Air Vehicles

DTIC Science & Technology

2012-01-01

Ultra Electronics MSI, the Altus will have the ability to pass control from a traditional command and control system to a dismounted/off-base...offer extended radar horizon (higher altitude can see farther), ultra -long-endurance as an objective and a very small forward footprint so they do...used in a variety of missions and exercises. For example, it was used in the Gulf of Mexico to monitor the Deepwater Horizon oil spill. It is

Superconductivity in an electron band just above the Fermi level: possible route to BCS-BEC superconductivity.

PubMed

Okazaki, K; Ito, Y; Ota, Y; Kotani, Y; Shimojima, T; Kiss, T; Watanabe, S; Chen, C-T; Niitaka, S; Hanaguri, T; Takagi, H; Chainani, A; Shin, S

2014-02-28

Conventional superconductivity follows Bardeen-Cooper-Schrieffer(BCS) theory of electrons-pairing in momentum-space, while superfluidity is the Bose-Einstein condensation(BEC) of atoms paired in real-space. These properties of solid metals and ultra-cold gases, respectively, are connected by the BCS-BEC crossover. Here we investigate the band dispersions in FeTe(0.6)Se(0.4)(Tc = 14.5 K ~ 1.2 meV) in an accessible range below and above the Fermi level(EF) using ultra-high resolution laser angle-resolved photoemission spectroscopy. We uncover an electron band lying just 0.7 meV (~8 K) above EF at the Γ-point, which shows a sharp superconducting coherence peak with gap formation below Tc. The estimated superconducting gap Δ and Fermi energy [Symbol: see text]F indicate composite superconductivity in an iron-based superconductor, consisting of strong-coupling BEC in the electron band and weak-coupling BCS-like superconductivity in the hole band. The study identifies the possible route to BCS-BEC superconductivity.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Solid state effects on the electronic structure of H2OEP.

PubMed

Marsili, M; Umari, P; Di Santo, G; Caputo, M; Panighel, M; Goldoni, A; Kumar, M; Pedio, M

2014-12-28

We present the results of a joint experimental and theoretical investigation concerning the effect of crystal packing on the electronic properties of the H2OEP molecule. Thin films, deposited in ultra high vacuum on metal surfaces, are investigated by combining valence band photoemission, inverse photoemission, and X-ray absorption spectroscopy. The spectra of the films are compared, when possible, with those measured in the gas phase. Once many-body effects are included in the calculations through the GW method, the electronic structure of H2OEP in the film and gas phase are accurately reproduced for both valence and conduction states. Upon going from an isolated molecule to the film phase, the electronic gap shrinks significantly and the lowest unoccupied molecular orbital (LUMO) and LUMO + 1 degeneracy is removed. The calculations show that the reduction of the transport gap in the film is entirely addressable to the enhancement of the electronic screening.

Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

NASA Astrophysics Data System (ADS)

Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

2015-03-01

Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

DOEpatents

Cardinale, Gregory F.

2002-01-01

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Growth after thinning in 110-year old Douglas-fir.

Treesearch

Vern P. Yerkes

1960-01-01

A 6-year record of growth after thinning indicates that 110-year-old Douglas-fir stands on site 111 land have passed the age when growth capacity can be fully transferred to fewer stems through thinning.

Ultra-thin metamaterial for perfect and quasi-omnidirectional sound absorption

NASA Astrophysics Data System (ADS)

Jiménez, N.; Huang, W.; Romero-García, V.; Pagneux, V.; Groby, J.-P.

2016-09-01

Using the concepts of slow sound and critical coupling, an ultra-thin acoustic metamaterial panel for perfect and quasi-omnidirectional absorption is theoretically and experimentally conceived in this work. The system is made of a rigid panel with a periodic distribution of thin closed slits, the upper wall of which is loaded by Helmholtz Resonators (HRs). The presence of resonators produces a slow sound propagation shifting the resonance frequency of the slit to the deep sub-wavelength regime ( λ/88 ). By controlling the geometry of the slit and the HRs, the intrinsic visco-thermal losses can be tuned in order to exactly compensate the energy leakage of the system and fulfill the critical coupling condition to create the perfect absorption of sound in a large range of incidence angles due to the deep subwavelength behavior.

Thin Film Electrodes for Rare Event Detectors

NASA Astrophysics Data System (ADS)

Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

2017-01-01

In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

PubMed

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

Ultra-Thin Coatings Beautify Art

NASA Technical Reports Server (NTRS)

2013-01-01

The craftsmen in the Roman Empire who constructed the Lycurgus Cup 17 centuries ago probably didn't think their artifact would survive for nearly 2,000 years as a prized possession. And they certainly couldn't have known that the technology they used to make it would eventually become an important part of space exploration. Carved from one solid mass, the cup is one of the few complete glass objects from that period, and the only one made from dichroic glass. Meaning "two-colored" in Greek, dichroic glass was originally created by adding trace amounts of gold and silver to a large volume of glass melt. The resulting medium partially reflects the light passing through it, causing an observer to see different colors depending on the direction of the light source. The Lycurgus Cup, for example, is famous for appearing green in daylight and red when lit at night, symbolic of the ripening grapes used to fill it with wine. NASA revitalized the production of dichroic glass in the 1950s and 1960s as a means of protecting its astronauts. Ordinary clear substances cannot protect human vision from the harsh rays of unfiltered sunlight, and everything from the human body to spacecraft sensors and computers are at risk if left unprotected from the radiation that permeates space. The microscopic amounts of metal present in dichroic glass make it an effective barrier against such harmful radiation. While the ancient manufacturing technique called for adding metals to glass melt, NASA developed a process in which metals are vaporized by electron beams in a vacuum chamber and then applied directly to surfaces in an ultra-thin film. The vapor condenses in the form of crystal structures, and the process is repeated for up to several dozen coatings. The resulting material, still only about 30 millionths of an inch thick, is sufficient to reflect radiation even while the glass, or polycarbonate, as in the case of space suit helmets, remains transparent to the human eye.

Clamped seismic metamaterials: ultra-low frequency stop bands

NASA Astrophysics Data System (ADS)

Achaoui, Y.; Antonakakis, T.; Brûlé, S.; Craster, R. V.; Enoch, S.; Guenneau, S.

2017-06-01

The regularity of earthquakes, their destructive power, and the nuisance of ground vibration in urban environments, all motivate designs of defence structures to lessen the impact of seismic and ground vibration waves on buildings. Low frequency waves, in the range 1-10 Hz for earthquakes and up to a few tens of Hz for vibrations generated by human activities, cause a large amount of damage, or inconvenience; depending on the geological conditions they can travel considerable distances and may match the resonant fundamental frequency of buildings. The ultimate aim of any seismic metamaterial, or any other seismic shield, is to protect over this entire range of frequencies; the long wavelengths involved, and low frequency, have meant this has been unachievable to date. Notably this is scalable and the effects also hold for smaller devices in ultrasonics. There are three approaches to obtaining shielding effects: bragg scattering, locally resonant sub-wavelength inclusions and zero-frequency stop-band media. The former two have been explored, but the latter has not and is examined here. Elastic flexural waves, applicable in the mechanical vibrations of thin elastic plates, can be designed to have a broad zero-frequency stop-band using a periodic array of very small clamped circles. Inspired by this experimental and theoretical observation, all be it in a situation far removed from seismic waves, we demonstrate that it is possible to achieve elastic surface (Rayleigh) wave reflectors at very large wavelengths in structured soils modelled as a fully elastic layer periodically clamped to bedrock. We identify zero frequency stop-bands that only exist in the limit of columns of concrete clamped at their base to the bedrock. In a realistic configuration of a sedimentary basin 15 m deep we observe a zero frequency stop-band covering a broad frequency range of 0-30 Hz.

Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation.

PubMed

Schroeder, J L; Thomson, W; Howard, B; Schell, N; Näslund, L-Å; Rogström, L; Johansson-Jõesaar, M P; Ghafoor, N; Odén, M; Nothnagel, E; Shepard, A; Greer, J; Birch, J

2015-09-01

We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (>50 keV), high photon flux (>10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (<1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation processes. The high-energy synchrotron-radiation based x-rays result in small scattering angles (<11°), allowing large areas of reciprocal space to be imaged with a 2D detector. The system has been designed for use on the 1-tonne, ultra-high load, high-resolution hexapod at the P07 High Energy Materials Science beamline at PETRA III at the Deutsches Elektronen-Synchrotron in Hamburg, Germany. The deposition system includes standard features of a typical UHV deposition system plus a range of special features suited for synchrotron radiation studies and industry-relevant processes. We openly encourage the materials research community to contact us for collaborative opportunities using this unique and versatile scientific instrument.

Measuring thermal conductivity of thin films and coatings with the ultra-fast transient hot-strip technique

NASA Astrophysics Data System (ADS)

Belkerk, B. E.; Soussou, M. A.; Carette, M.; Djouadi, M. A.; Scudeller, Y.

2012-07-01

This paper reports the ultra-fast transient hot-strip (THS) technique for determining the thermal conductivity of thin films and coatings of materials on substrates. The film thicknesses can vary between 10 nm and more than 10 µm. Precise measurement of thermal conductivity was performed with an experimental device generating ultra-short electrical pulses, and subsequent temperature increases were electrically measured on nanosecond and microsecond time scales. The electrical pulses were applied within metallized micro-strips patterned on the sample films and the temperature increases were analysed within time periods selected in the window [100 ns-10 µs]. The thermal conductivity of the films was extracted from the time-dependent thermal impedance of the samples derived from a three-dimensional heat diffusion model. The technique is described and its performance demonstrated on different materials covering a large thermal conductivity range. Experiments were carried out on bulk Si and thin films of amorphous SiO2 and crystallized aluminum nitride (AlN). The present approach can assess film thermal resistances as low as 10-8 K m2 W-1 with a precision of about 10%. This has never been attained before with the THS technique.

Approximating the near-edge mass absorption coefficients for Ni using an ultra-thin bimetal foil

DOE PAGES

Alkire, Randall W.

2016-11-01

In an effort to improve the characteristics of a fluorescing metal-foil-based beam position monitor, a new bimetal ultra-thin (0.98/0.67 µm) Ti–Ni foil was introduced to replace an existing single-element ultra-thin 0.5 µm thick Cr foil. During characterization it was determined that absorption measurements on the bimetal foil could be used to fit the Ni mass absorption coefficients accurately in the vicinity of the NiKedge. Comparison with experimental results from the literature demonstrated that the fitting procedure produced coefficients with uncertainties of the order of ±1%. Once determined, these fit coefficients allowed the thickness of an independently mounted 8 µm thickmore » Ni foil to be computed from absorption measurements instead of relying on a tool-based measurement of the foil thickness. Using the 8 µm thick foil, a continuous map of Ni mass absorption coefficients was produced at 1 eV resolution throughout the near-edge region. Lastly, this high-resolution map marks a significant improvement over the existing NIST XCOM or FFAST database mass absorption coefficients, which have estimated errors of 10–20% for the near-edge region.« less

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Advances in nanoimprint lithography and applications in plasmonic-enhanced electron source

NASA Astrophysics Data System (ADS)

Liang, Yixing

The research work in this thesis comprises of two parts. The first part focuses on nanofabrication techniques for better control of nanostructures, such as line edge roughness control and critical structure dimensions, for improvement in large area lift-off of ultra-thin (sub-40 nm) and ultra-small (sub-20 nm) nanostructures, and for improvement in mold-substrate separation. The second part of this thesis studies one important application of nanoimprint lithography (NIL) in the field of plasmonic-enhanced electron source. In the first part, a post-fabrication method, termed Self-limited Self Perfection by Liquefaction (SP-SPEL), is studied. SP-SPEL has experimentally demonstrated to reduce the trench width with precise control down to 20 nm from original 90 nm width, - 450% reduction. In addition, SP-SPEL increases the trench width uniformity and reduces the low-frequency line edge roughness. Second, a tri-layer method is studied to offer large area, efficient lift-off of ultra-thin (sub-40 nm) and ultra-fine (sub-20 nm) nanostructures. Using this method, a nanoimprint mold is fabricated. Third, tribo-electronics in NIL has been studied. It has been shown that tribo-charge can not only skew the AFM measurement by over 400%, but also largely increase the mold-substrate separation force. To solve this problem, a new mold structure is firstly proposed by Professor Stephen Y Chou and has demonstrated to reduce the separation force by over 8 fold. In the second part, a plasmonic-enhanced nanostructured electron source is studied, for both semiconducting and metallic photoemissive materials. For the semiconducting photocathode, a vertical cavity structure, comprising a top sub-wavelength mesh, ultra-thin (~ 40 nm) semiconducting materials in the middle and metallic back-plane, has demonstrated a 30 fold enhancement in photoelectron emission over a planar thin film. In addition, for the metallic photocathode, a 3D nanocavity, termed "Disk coupled Dots-on-Pillar Antenna-array (D2PA)", has achieved 8 orders of magnitude more efficiently in emitting photoelectrons for Au and 3 orders of magnitude for CsAu compared with planar thin films respectively. The significant enhancement in photoelectron emission efficiency and brightness is ascribed to nanoplasmonic enhancement (large pumping light absorption and local electric field enhancement) provided by the plasmonic cavity structures.

Pentacene Organic Thin-Film Transistors on Flexible Paper and Glass Substrates

DTIC Science & Technology

2014-02-12

FEB 2014 2. REPORT TYPE 3. DATES COVERED 00-00-2014 to 00-00-2014 4. TITLE AND SUBTITLE Pentacene organic thin - film transistors on flexible...Nanotechnology 25 (2014) 094005 (7pp) doi:10.1088/0957-4484/25/9/094005 Pentacene organic thin - film transistors on flexible paper and glass substrates Adam T...organic thin - film transistors (OTFTs) were fabricated on several types of flexible substrate: commercial photo paper, ultra-smooth specialty paper and

S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, H; Zulkifli, M Z; Hassan, N A

2013-10-31

We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum withmore » a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)« less

Thin-Film Solar Cells on Polymer Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepps, A. F.; McNatt, Jeremiah; Morel, D. L.; Ferckides, C. S.; Jin, M. H.; Orbey, N.; Cushman, M.; Birkmire, R. W.; Shafarman, W. N.; Newton, R.

2004-01-01

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. Solar cells based on thin-film materials offer the promise of much higher MSP and much lower cost. However, for many space applications, a 20% or greater AM0 efficiency (eta) may be required. The leading thin-film materials, amorphous Si, CuInSe, and CdTe have seen significant advances in efficiency over the last decade but will not achieve the required efficiency in the near future. Several new technologies are herein described to maximize both device eta and MSP. We will discuss these technologies in the context of space exploration and commercialization. One novel approach involves the use of very lightweight polyimide substrates. We describe efforts to enable this advance including materials processing and device fabrication and characterization. Another approach involves stacking two cells on top of each other. These tandem devices more effectively utilize solar radiation by passing through non-absorbed longer wavelength light to a narrow-bandgap bottom cell material. Modeling of current devices in tandem format indicates that AM0 efficiencies near 20% can be achieved with potential for 25% in the near future. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Recent advances will be stressed.

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Development of a high efficiency thin silicon solar cell

NASA Technical Reports Server (NTRS)

Lindmayer, J.; Wrigley, C. Y.

1977-01-01

A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.

Method for producing a thin sample band in a microchannel device

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2004-08-03

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Apparatus for producing a thin sample band in a microchannel system

DOEpatents

Griffiths, Stewart K [Livermore, CA; Nilson, Robert H [Cardiff, CA

2008-05-13

The present invention improves the performance of microchannel systems for chemical and biological synthesis and analysis by providing a method and apparatus for producing a thin band of a species sample. Thin sample bands improve the resolution of microchannel separation processes, as well as many other processes requiring precise control of sample size and volume. The new method comprises a series of steps in which a species sample is manipulated by controlled transport through a junction formed at the intersection of four or more channels. A sample is first inserted into the end of one of these channels in the vicinity of the junction. Next, this sample is thinned by transport across the junction one or more times. During these thinning steps, flow enters the junction through one of the channels and exists through those remaining, providing a divergent flow field that progressively stretches and thins the band with each traverse of the junction. The thickness of the resulting sample band may be smaller than the channel width. Moreover, the thickness of the band may be varied and controlled by altering the method alone, without modification to the channel or junction geometries. The invention is applicable to both electroosmotic and electrophoretic transport, to combined electrokinetic transport, and to some special cases in which bulk fluid transport is driven by pressure gradients. It is further applicable to channels that are open, filled with a gel or filled with a porous or granular material.

Simulation of polarization-dependent film with subwavelength nano-hole array

NASA Astrophysics Data System (ADS)

Yu, Yue; Wei, Dong; Long, Huabao; Xin, Zhaowei; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

2018-02-01

When lightwave passes through a metal thin film with a periodic subwavelength hole arrays structure, its transmittance is significantly improved in the partial band compared to other wavelength. Changing the size of the hole, the period or metal material, will make the transmission curve different. Here, we add a layer of dielectric material on the surface of the metal film, such as liquid crystal(LC), by controlling voltage on LC to change the refractive index of this layer, then we can change the transmission curve, and achieve using voltage to move the transmission curve. When there is need for polarization, the holes can be made of a rectangle whose length and width are different or other shapes, for different polarization state of the light, and the film will display different transmission characteristics.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Impedance self-matching ultra-narrow linewidth fiber resonator by use of a tunable π-phase-shifted FBG.

PubMed

Jing, Mingyong; Yu, Bo; Hu, Jianyong; Hou, Huifang; Zhang, Guofeng; Xiao, Liantuan; Jia, Suotang

2017-05-15

In this paper, we present a novel ultra-narrow linewidth fiber resonator formed by a tunable polarization maintaining (PM) π-phase-shifted fiber Bragg grating and a PM uniform fiber Bragg grating with a certain length of PM single mode fiber patch cable between them. Theoretical prediction shows that this resonator has ultra-narrow linewidth resonant peaks and is easy to realize impedance matching. We experimentally obtain 3 MHz narrow linewidth impedance matched resonant peak in a 7.3 m ultra-long passive fiber cavity. The impedance self-matching characteristic of this resonator also makes itself particularly suitable for use in ultra-sensitive sensors, ultra-narrow band rejection optical filters and fiber lasers applications.

Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Erica M.; Williams, Logan; Olvera, Alan

We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (10 5 cm −1 ) in the entire visible range make it a promising Earth-abundant solar absorber material.

Sustainable p-type copper selenide solar material with ultra-large absorption coefficient

DOE PAGES

Chen, Erica M.; Williams, Logan; Olvera, Alan; ...

2018-01-01

We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (10 5 cm −1 ) in the entire visible range make it a promising Earth-abundant solar absorber material.

Development of High Resistive and High Magnetization Soft Thin Film and Fabrication of Thin Film Inductors

DTIC Science & Technology

2004-11-01

properties of Co- doped ZnO nanocluster films", .J. of Appl. Phys. in press, 2005 2. Presentations (contributed): Conference Contributions: 1) Y. Qiang...gigahertz band applications. The effects of substrates bias, sputter parameters, and seed-layer have thoroughly been investigated. The magnetic...Adequate properties of soft magnetic thin film were evaluated by an analytical calculation [1] to meet the requirement for gigahertz band thin-film

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

DTIC Science & Technology

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Ultra-Wideband Array in PCB for Millimeter-Wave 5G and ISM

NASA Technical Reports Server (NTRS)

Novak, Markus H.; Volakis, John L.; Miranda, Felix A.

2017-01-01

Next generation 5G mobile architectures will take advantage of the millimeter-wave spectrum to deliver unprecedented bandwidth. Concurrently, there is a need to consolidate numerous disparate allocations into a single, multi-functional array. Existing arrays are either narrow-band, prohibitively expensive or cannot be scaled to these frequencies. In this paper, we present the first ultra-wideband millimeter-wave array to operate across the six 5G and ISM bands spanning 24-71 GHz. Critically, the array is realized using low-cost PCB. The design concept and optimized layout are presented, and fabrication and measurement considerations are discussed.

Wide band cryogenic ultra-high vacuum microwave absorber

DOEpatents

Campisi, I.E.

1992-05-12

An absorber waveguide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the waveguide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the waveguide. 11 figs.

Wide band cryogenic ultra-high vacuum microwave absorber

DOEpatents

Campisi, Isidoro E.

1992-01-01

An absorber wave guide assembly for absorbing higher order modes of microwave energy under cryogenic ultra-high vacuum conditions, that absorbs wide-band multi-mode energy. The absorber is of a special triangular shape, made from flat tiles of silicon carbide and aluminum nitride. The leading sharp end of the absorber is located in a corner of the wave guide and tapers to a larger cross-sectional area whose center is located approximately in the center of the wave guide. The absorber is relatively short, being of less height than the maximum width of the wave guide.

Fabrication of seamless calandria tubes by cold pilgering route using 3-pass and 2-pass schedules

NASA Astrophysics Data System (ADS)

Saibaba, N.

2008-12-01

Calandria tube is a large diameter, extremely thin walled zirconium alloy tube which has diameter to wall thickness ratio as high as 90-95. Such tubes are conventionally produced by the 'welded route', which involves extrusion of slabs followed by a series of hot and cold rolling passes, intermediate anneals, press forming of sheets into circular shape and closing the gap by TIG welding. Though pilgering is a well established process for the fabrication of seamless tubes, production of extremely thin walled tubes offers several challenges during pilgering. Nuclear fuel complex (NFC), Hyderabad, has successfully developed a process for the production of Zircaloy-4 calandria tubes by adopting the 'seamless route' which involves hot extrusion of mother blanks followed by three-pass pilgering or two-pass pilgering schedules. This paper deals with standardization of the seamless route processes for fabrication of calandria tubes, comparison between the tubes produced by 2-pass and 3-pass pilgering schedules, role of ultrasonic test charts for control of process parameters, development of new testing methods for burst testing and other properties.

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

NASA Astrophysics Data System (ADS)

Jain, N.; Zhu, Y.; Maurya, D.; Varghese, R.; Priya, S.; Hudait, M. K.

2014-01-01

We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO2 thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO2 thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO2/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO2 thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO2/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO2/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔEV(100) > ΔEV(111) > ΔEV(110) and a conduction band-offset relation of ΔEC(110) > ΔEC(111) > ΔEC(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO2 for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

Generation of Quality Pulses for Control of Qubit/Quantum Memory Spin States: Experimental and Simulation

DTIC Science & Technology

2016-09-01

as an example the integration of cryogenic superconductor components, including filters and amplifiers to improve the pulse quality and validate the...5 5.1 CRYOGENIC BAND-PASS FILTERS .............................................................................10 6. BIBLIOGRAPHY...10 16. Gain plot of DARPA SURF tunable band-pass filter tuned to 950-MHz .............................. 10 v 17. VSG at -50 dBm: Experimental

Ultra-Wideband Massive MIMO Communications Using Multi-mode Antennas

NASA Astrophysics Data System (ADS)

Hoeher, P. A.; Manteuffel, D.; Doose, N.; Peitzmeier, N.

2017-09-01

An ultra-wideband system design is presented which supports wireless internet access and similar short-range applications with data rates of the order of 100 Gbps. Unlike concurrent work exploring the 60 GHz regime and beyond for this purpose, our focus is on the 6.0 -8.5 GHz frequency band. Hence, a bandwidth efficiency of about 50 bps/Hz is necessary. This sophisticated goal is targeted by employing two key enabling techniques: massive MIMO communications in conjunction with multi-mode antennas. This concept is suitable both for small-scale terminals like smartphones, as well as for powerful access points. Compared to millimeter wave and THz band communications, the 6.0 -8.5 GHz frequency band offers more robustness in NLOS scenarios and is more mature with respect to system components.

Ultra-Small Dualband Dualmode Microstrip Antenna Based on Novel Hybrid Resonator

NASA Astrophysics Data System (ADS)

Zhu, Ji-Xu; Bai, Peng; Zheng, Hao-Zhong

2016-11-01

A novel hybrid resonator consists of right handed patch+composite right and left handed transmission line (RH+CRLH) is proposed for the first time aiming at both compactness and frequency manipulation. A demonstration with theoretical dispersion relations and EM simulation is provided for the correctness and efficiency. According to the new method, an ultra-small and dualband antenna operating around 2.4 GHz (n=0, Bluetooth band) and 3.5 GHz (n=+1, Wimax band) is designed, fabricated and measured, whose occupied area is only of 0.158 λ_0. Numerical and experimental results indicate that the antenna exhibits a good impendence match, low cross-polarization and comparable radiation gains in both bands. Excellent performances of the antennas based on hybrid resonators predict promising applications in multifunction wireless communication systems.

Ultra-Wideband Phased Array for Millimeter-Wave 5G and ISM

NASA Technical Reports Server (NTRS)

Novak, Markus H.; Volakis, John L.; Miranda, Felix A.

2016-01-01

Growing mobile data consumption has prompted the exploration of the millimeter-wave spectrum for large bandwidth, high speed communications. However, the allocated bands are spread across a wide swath of spectrum: fifth generation mobile architecture (5G): 28, 38, 39, 64-71 GHz, as well as Industrial, Scientific, and Medical bands (ISM): 24 and 60 GHz. Moreover, high gain phased arrays are required to overcome the significant path loss associated with these frequencies. Further, it is necessary to incorporate several of these applications in a single, small size and low cost platform. To this end, we have developed a scanning, Ultra-Wideband (UWB) array which covers all 5G, ISM, and other mm-W bands from 24-72 GHz. Critically, this is accomplished using mass-production Printed Circuit Board (PCB) fabrication.

Design and Simulation of Microstrip Hairpin Bandpass Filter with Open Stub and Defected Ground Structure (DGS) at X-Band Frequency

NASA Astrophysics Data System (ADS)

Hariyadi, T.; Mulyasari, S.; Mukhidin

2018-02-01

In this paper we have designed and simulated a Band Pass Filter (BPF) at X-band frequency. This filter is designed for X-band weather radar application with 9500 MHz center frequency and bandwidth -3 dB is 120 MHz. The filter design was performed using a hairpin microstrip combined with an open stub and defected ground structure (DGS). The substrate used is Rogers RT5880 with a dielectric constant of 2.2 and a thickness of 1.575 mm. Based on the simulation results, it is found that the filter works on frequency 9,44 - 9,56 GHz with insertion loss value at pass band is -1,57 dB.

Coating of plasma polymerized film

NASA Technical Reports Server (NTRS)

Morita, S.; Ishibashi, S.

1980-01-01

Plasma polymerized thin film coating and the use of other coatings is suggested for passivation film, thin film used for conducting light, and solid body lubrication film of dielectrics of ultra insulators for electrical conduction, electron accessories, etc. The special features of flow discharge development and the polymerized film growth mechanism are discussed.

Nonlinear Structural Analysis Methodology and Dynamics Scaling of Inflatable Parabolic Reflector Antenna Concepts

NASA Technical Reports Server (NTRS)

Sreekantamurthy, Tham; Gaspar, James L.; Mann, Troy; Behun, Vaughn; Pearson, James C., Jr.; Scarborough, Stephen

2007-01-01

Ultra-light weight and ultra-thin membrane inflatable antenna concepts are fast evolving to become the state-of-the-art antenna concepts for deep-space applications. NASA Langley Research Center has been involved in the structural dynamics research on antenna structures. One of the goals of the research is to develop structural analysis methodology for prediction of the static and dynamic response characteristics of the inflatable antenna concepts. This research is focused on the computational studies to use nonlinear large deformation finite element analysis to characterize the ultra-thin membrane responses of the antennas. Recently, structural analyses have been performed on a few parabolic reflector antennas of varying size and shape, which are referred in the paper as 0.3 meters subscale, 2 meters half-scale, and 4 meters full-scale antenna. The various aspects studied included nonlinear analysis methodology and solution techniques, ways to speed convergence in iterative methods, the sensitivities of responses with respect to structural loads, such as inflation pressure, gravity, and pretension loads in the ground and in-space conditions, and the ultra-thin membrane wrinkling characteristics. Several such intrinsic aspects studied have provided valuable insight into evaluation of structural characteristics of such antennas. While analyzing these structural characteristics, a quick study was also made to assess the applicability of dynamics scaling of the half-scale antenna. This paper presents the details of the nonlinear structural analysis results, and discusses the insight gained from the studies on the various intrinsic aspects of the analysis methodology. The predicted reflector surface characteristics of the three inflatable ultra-thin membrane parabolic reflector antenna concepts are presented as easily observable displacement fringe patterns with associated maximum values, and normal mode shapes and associated frequencies. Wrinkling patterns are presented to show how surface wrinkle progress with increasing tension loads. Antenna reflector surface accuracies were found to be very much dependent on the type and size of the antenna, the reflector surface curvature, reflector membrane supports in terms of spacing of catenaries, as well as the amount of applied load.

Generation of X-rays by electrons recycling through thin internal targets of cyclic accelerators

NASA Astrophysics Data System (ADS)

Kaplin, V.; Kuznetsov, S.; Uglov, S.

2018-05-01

The use of thin (< 10‑3 radiation length) internal targets in cyclic accelerators leads to multiple passes (recycling effect) of electrons through them. The multiplicity of electron passes (M) is determined by the electron energy, accelerator parameters, the thickness, structure and material of a target and leads to an increase in the effective target thickness and the efficiency of radiation generation. The increase of M leads to the increase in the emittance of electron beams which can change the characteristics of radiation processes. The experimental results obtained using the Tomsk synchrotron and betatron showed the possibility of increasing the yield and brightness of coherent X-rays generated by the electrons passing (recycling) through thin crystals and periodic multilayers placed into the chambers of accelerators, when the recycling effect did not influence on the spectral and angular characteristics of generated X-rays.

Pass-band reconfigurable spoof surface plasmon polaritons

NASA Astrophysics Data System (ADS)

Zhang, Hao Chi; He, Pei Hang; Gao, Xinxin; Tang, Wen Xuan; Cui, Tie Jun

2018-04-01

In this paper, we introduce a new scheme to construct the band-pass tunable filter based on the band-pass reconfigurable spoof surface plasmon polaritons (SPPs), whose cut-off frequencies at both sides of the passband can be tuned through changing the direct current (DC) bias of varactors. Compared to traditional technology (e.g. microstrip filters), the spoof SPP structure can provide more tight field confinement and more significant field enhancement, which is extremely valuable for many system applications. In order to achieve this scheme, we proposed a specially designed SPP filter integrated with varactors and DC bias feeding structure to support the spoof SPP passband reconfiguration. Furthermore, the full-wave simulated result verifies the outstanding performance on both efficiency and reconfiguration, which has the potential to be widely used in advanced intelligent systems.

Self-assembled Co-BaZrO 3 nanocomposite thin films with ultra-fine vertically aligned Co nanopillars

DOE PAGES

Huang, Jijie; Li, Leigang; Lu, Ping; ...

2017-05-11

A simple one-step pulsed laser deposition (PLD) method has been applied to grow self-assembled metal-oxide nanocomposite thin films. The as-deposited Co-BaZrO 3 films show high epitaxial quality with ultra-fine vertically aligned Co nanopillars (diameter <5 nm) embeded in BZO matrix. The diameter of the nanopillars can be further tuned by varying the deposition frequency. The metal and oxide phases grow separately without inter-diffusion or mixing. Taking advantage of this unique structure, a high saturation magnetization of ~1375 emu/cm 3 in the Co- BaZrO 3 nanocomposites has been achieved and further confirmed by Lorentz microscopy imaging in TEM. Furthermore, the coercivitymore » values of this nanocomposite thin films range from 600 Oe (20 Hz) to 1020 Oe (2 Hz), which makes the nanocomposite an ideal candidate for high-density perpendicular recording media.« less

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, S., E-mail: smatsui@gpi.ac.jp; Mori, Y.; Nonaka, T.

2016-05-15

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films andmore » Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.« less

Room-temperature creation and spin-orbit torque-induced manipulation of skyrmions in thin film

NASA Astrophysics Data System (ADS)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang; Li, Wenyuan; Im, Se Kwon K.; Fan, Yabin; Wong, Kin L.; Tserkovnyak, Yaroslav; Amiri, Pedram Khalili; Wang, Kang L.

Magnetic skyrmions, which are topologically protected spin texture, are promising candidates for ultra-low energy and ultra-high density magnetic data storage and computing applications1, 2. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of materials available is limited and there is a lack of electrical means to control of skyrmions. Here, we experimentally demonstrate a method for creating skyrmion bubbles phase in the ferromagnetic thin film at room temperature. We further demonstrate that the created skyrmion bubbles can be manipulated by electric current. This room-temperature creation and manipulation of skyrmion in thin film is of particular interest for applications, being suitable for room-temperature operation and compatible with existing semiconductor manufacturing tools. 1. Nagaosa, N., Tokura, Y. Nature Nanotechnology 8, 899-911 (2013). 2. Fert, A., et al., Nature Nanotechnology 8, 152-156 (2013).

Energy deposition evaluation for ultra-low energy electron beam irradiation systems using calibrated thin radiochromic film and Monte Carlo simulations.

PubMed

Matsui, S; Mori, Y; Nonaka, T; Hattori, T; Kasamatsu, Y; Haraguchi, D; Watanabe, Y; Uchiyama, K; Ishikawa, M

2016-05-01

For evaluation of on-site dosimetry and process design in industrial use of ultra-low energy electron beam (ULEB) processes, we evaluate the energy deposition using a thin radiochromic film and a Monte Carlo simulation. The response of film dosimeter was calibrated using a high energy electron beam with an acceleration voltage of 2 MV and alanine dosimeters with uncertainty of 11% at coverage factor 2. Using this response function, the results of absorbed dose measurements for ULEB were evaluated from 10 kGy to 100 kGy as a relative dose. The deviation between the responses of deposit energy on the films and Monte Carlo simulations was within 15%. As far as this limitation, relative dose estimation using thin film dosimeters with response function obtained by high energy electron irradiation and simulation results is effective for ULEB irradiation processes management.

Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty

PubMed Central

Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

2013-01-01

Primary cheek teratomas are rare with < 5 reported cases. None had associated temporo mandibular joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence. PMID:24163567

Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

NASA Astrophysics Data System (ADS)

Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

2017-08-01

The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2Rg film thickness, where Rg ∼ 20 nm (Rg is the unperturbed radius of gyration of polystyrene, defined by Rg = 0.272 √M0, and M0 is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

Engineering ultra-flattened normal dispersion photonic crystal fiber with silica material

NASA Astrophysics Data System (ADS)

Ferhat, Mohamed Lamine; Cherbi, Lynda; Bahloul, Lies; Hariz, Abdelhafid

2017-05-01

The tailoring of the group velocity dispersion (GVD) of an optical fiber is critical in many applications, influence on the bandwidth of information transmission in optical communication systems, successful utilization of nonlinear optical properties in applications such as supercontinuum generation, wavelength conversion and harmonic generation via stimulated Raman scattering ...In this work, we propose a design of ultra-flattened photonic crystal fiber by changing the diameter of the air holes of the cladding rings. The geometry is composed of only four rings, hexagonal structure of air holes and silica as background of the solid core. As a result, we present structures with broadband flat normal dispersion on many wavelengths bands useful for several applications. We obtain flat normal dispersion over 1000 nm broadband flat normal dispersion below -7 [ps/nm.km], and ultra-flat near zero normal dispersion below -0.2 [ps/nm.km] over 150 nm. The modeled photonic crystal fiber would be valuable for the fabrication of ultra-flattened-dispersion fibers, and have potential applications in wide-band high-speed optical communication systems, supercontinuum generation and many other applications.

Tunable-Bandwidth Filter System

NASA Technical Reports Server (NTRS)

Bailey, John W.

2004-01-01

A tunable-bandwidth filter system (TBFS), now undergoing development, is intended to be part of a remote sensing multispectral imaging system that will operate in the visible and near infrared spectral region (wavelengths from 400 to 900 nm). Attributes of the TBFS include rapid tunability of the pass band over a wide wavelength range and high transmission efficiency. The TBFS is based on a unique integration of two pairs of broadband Raman reflection holographic filters with two rotating spherical lenses. In experiments, a prototype of the TBFS, was shown to be capable of spectral sampling of images in the visible range over a 200 nm spectral range with a spectral resolution of 30 nm. The figure depicts the optical layout of a prototype of the TBFS as part of a laboratory multispectral imaging system for the spectral sampling of color test images in two orthogonal polarizations. Each pair of broadband Raman reflection holographic filters is mounted at an equatorial plane between two halves of a spherical lens. The two filters in each pair are characterized by steep spectral slopes (equivalently, narrow spectral edges), no ripple or side lobes in their pass bands, and a few nanometers of non-overlapping wavelength range between their pass bands. Each spherical lens and thus the filter pair within it is rotated in order to rapidly tune its pass band. The rotations of are effected by electronically controlled, programmable, high-precision rotation stages. The rotations are coordinated by electronic circuits operating under overall supervision of a personal computer in order to obtain the desired variation of the overall pass bands with time. Embedding the filters inside the spherical lenses increases the range of the hologram incidence angles, making it possible to continuously tune the pass and stop bands of the filters over a wider wavelength range. In addition, each spherical lens also serves as part of the imaging optics: The telephoto lens focuses incoming light to a field stop that is also a focal point of each spherical lens. A correcting lens in front of the field stop compensates for the spherical aberration of the spherical lenses. The front surface of each spherical lens collimates the light coming from the field stop. After the collimated light passes through the filter in the spherical lens, the rear surface of the lens focuses the light onto a charge-coupled-device image detector.

Tunable-Bandwidth Filter System

NASA Technical Reports Server (NTRS)

Aye, Tin; Yu, Kevin; Dimov, Fedor; Savant, Gajendra

2006-01-01

A tunable-bandwidth filter system (TBFS), now undergoing development, is intended to be part of a remote-sensing multispectral imaging system that will operate in the visible and near infrared spectral region (wavelengths from 400 to 900 nm). Attributes of the TBFS include rapid tunability of the pass band over a wide wavelength range and high transmission efficiency. The TBFS is based on a unique integration of two pairs of broadband Raman reflection holographic filters with two rotating spherical lenses. In experiments, a prototype of the TBFS was shown to be capable of spectral sampling of images in the visible range over a 200-nm spectral range with a spectral resolution of .30 nm. The figure depicts the optical layout of a prototype of the TBFS as part of a laboratory multispectral imaging system for the spectral sampling of color test images in two orthogonal polarizations. Each pair of broadband Raman reflection holographic filters is mounted at an equatorial plane between two halves of a spherical lens. The two filters in each pair are characterized by steep spectral slopes (equivalently, narrow spectral edges), no ripple or side lobes in their pass bands, and a few nanometers of non-overlapping wavelength range between their pass bands. Each spherical lens and thus the filter pair within it is rotated in order to rapidly tune its pass band. The rotations of the lenses are effected by electronically controlled, programmable, high-precision rotation stages. The rotations are coordinated by electronic circuits operating under overall supervision of a personal computer in order to obtain the desired variation of the overall pass bands with time. Embedding the filters inside the spherical lenses increases the range of the hologram incidence angles, making it possible to continuously tune the pass and stop bands of the filters over a wider wavelength range. In addition, each spherical lens also serves as part of the imaging optics: The telephoto lens focuses incoming light to a field stop that is also a focal point of each spherical lens. A correcting lens in front of the field stop compensates for the spherical aberration of the spherical lenses. The front surface of each spherical lens collimates the light coming from the field stop. After the collimated light passes through the filter in the spherical lens, the rear surface of the lens focuses the light onto a charge-coupled-device image detector.

Ultra-fast Movies Resolve Ultra-short Pulse Laser Ablation and Bump Formation on Thin Molybdenum Films

NASA Astrophysics Data System (ADS)

Domke, Matthias; Rapp, Stephan; Huber, Heinz

For the monolithic serial interconnection of CIS thin film solar cells, 470 nm molybdenum films on glass substrates must be separated galvanically. The single pulse ablation with a 660 fs laser at a wavelength of 1053 nm is investigated in a fluence regime from 0.5 to 5.0 J/cm2. At fluences above 2.0 J/cm2 bump and jet formation can be observed that could be used for creating microstructures. For the investigation of the underlying mechanisms of the laser ablation process itself as well as of the bump or jet formation, pump probe microscopy is utilized to resolve the transient ablation behavior.

Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

PubMed

Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

2012-12-14

The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

Simultaneous laser cutting and welding of metal foil to edge of a plate

DOEpatents

Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

1996-01-01

A method of welding an ultra-thin foil to the edge of a thicker sheet to form a vacuum insulation panel comprising the steps of providing an ultra-thin foil having a thickness less than 0.002, providing a top plate having an edge and a bottom plate having an edge, clamping the foil to the edge of the plate wherein the clamps act as heat sinks to distribute heat through the foil, providing a laser, moving the laser relative to the foil and the plate edges to form overlapping weld beads to weld the foil to the plate edges while simultaneously cutting the foil along the weld line formed by the overlapping beads.

Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

NASA Astrophysics Data System (ADS)

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-01

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films.

PubMed

Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

2018-06-29

We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO 2 ultra-thin films. The SiO 2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO 2 ∣PEDOT:PSS architecture show good resistive switching performance with set-reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO 2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO 2 interface.

Surface plasmons and Bloch surface waves: Towards optimized ultra-sensitive optical sensors

DOE PAGES

Lereu, Aude L.; Zerrad, M.; Passian, Ali; ...

2017-07-07

In photonics, the field concentration and enhancement have been major objectives for achieving size reduction and device integration. Plasmonics offers resonant field confinement and enhancement, but ultra-sharp optical resonances in all-dielectric multi-layer thin films are emerging as a powerful contestant. Thus, applications capitalizing upon stronger and sharper optical resonances and larger field enhancements could be faced with a choice for the superior platform. Here in this paper, we present a comparison between plasmonic and dielectric multi-layer thin films for their resonance merits. We show that the remarkable characteristics of the resonance behavior of optimized dielectric multi-layers can outweigh those ofmore » their metallic counterpart.« less

Ultra-thin microporous/hybrid materials

DOEpatents

Jiang, Ying-Bing [Albuquerque, NM; Cecchi, Joseph L [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM

2012-05-29

Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

Effects of spectrometer band pass, sampling, and signal-to-noise ratio on spectral identification using the Tetracorder algorithm

USGS Publications Warehouse

Swayze, G.A.; Clark, R.N.; Goetz, A.F.H.; Chrien, T.H.; Gorelick, N.S.

2003-01-01

Estimates of spectrometer band pass, sampling interval, and signal-to-noise ratio required for identification of pure minerals and plants were derived using reflectance spectra convolved to AVIRIS, HYDICE, MIVIS, VIMS, and other imaging spectrometers. For each spectral simulation, various levels of random noise were added to the reflectance spectra after convolution, and then each was analyzed with the Tetracorder spectra identification algorithm [Clark et al., 2003]. The outcome of each identification attempt was tabulated to provide an estimate of the signal-to-noise ratio at which a given percentage of the noisy spectra were identified correctly. Results show that spectral identification is most sensitive to the signal-to-noise ratio at narrow sampling interval values but is more sensitive to the sampling interval itself at broad sampling interval values because of spectral aliasing, a condition when absorption features of different materials can resemble one another. The band pass is less critical to spectral identification than the sampling interval or signal-to-noise ratio because broadening the band pass does not induce spectral aliasing. These conclusions are empirically corroborated by analysis of mineral maps of AVIRIS data collected at Cuprite, Nevada, between 1990 and 1995, a period during which the sensor signal-to-noise ratio increased up to sixfold. There are values of spectrometer sampling and band pass beyond which spectral identification of materials will require an abrupt increase in sensor signal-to-noise ratio due to the effects of spectral aliasing. Factors that control this threshold are the uniqueness of a material's diagnostic absorptions in terms of shape and wavelength isolation, and the spectral diversity of the materials found in nature and in the spectral library used for comparison. Array spectrometers provide the best data for identification when they critically sample spectra. The sampling interval should not be broadened to increase the signal-to-noise ratio in a photon-noise-limited system when high levels of accuracy are desired. It is possible, using this simulation method, to select optimum combinations of band-pass, sampling interval, and signal-to-noise ratio values for a particular application that maximize identification accuracy and minimize the volume of imaging data.

Crescent shaped Fabry-Perot fiber cavity for ultra-sensitive strain measurement.

PubMed

Liu, Ye; Wang, D N; Chen, W P

2016-12-02

Optical Fabry-Perot interferometer sensors based on inner air-cavity is featured with compact size, good robustness and high strain sensitivity, especially when an ultra-thin air-cavity is adopted. The typical shape of Fabry-Perot inner air-cavity with reflection mode of operation is elliptic, with minor axis along with and major axis perpendicular to the fiber length. The first reflection surface is diverging whereas the second one is converging. To increase the visibility of the output interference pattern, the length of major axis should be large for a given cavity length. However, the largest value of the major axis is limited by the optical fiber diameter. If the major axis length reaches the fiber diameter, the robustness of the Fabry-Perot cavity device would be decreased. Here we demonstrate an ultra-thin crescent shaped Fabry-Perot cavity for strain sensing with ultra-high sensitivity and low temperature cross-sensitivity. The crescent-shape cavity consists of two converging reflection surfaces, which provide the advantages of enhanced strain sensitivity when compared with elliptic or D-shaped FP cavity. The device is fabricated by fusion splicing an etched multimode fiber with a single mode fiber, and hence is simple in structure and economic in cost.

Crescent shaped Fabry-Perot fiber cavity for ultra-sensitive strain measurement

NASA Astrophysics Data System (ADS)

Liu, Ye; Wang, D. N.; Chen, W. P.

2016-12-01

Optical Fabry-Perot interferometer sensors based on inner air-cavity is featured with compact size, good robustness and high strain sensitivity, especially when an ultra-thin air-cavity is adopted. The typical shape of Fabry-Perot inner air-cavity with reflection mode of operation is elliptic, with minor axis along with and major axis perpendicular to the fiber length. The first reflection surface is diverging whereas the second one is converging. To increase the visibility of the output interference pattern, the length of major axis should be large for a given cavity length. However, the largest value of the major axis is limited by the optical fiber diameter. If the major axis length reaches the fiber diameter, the robustness of the Fabry-Perot cavity device would be decreased. Here we demonstrate an ultra-thin crescent shaped Fabry-Perot cavity for strain sensing with ultra-high sensitivity and low temperature cross-sensitivity. The crescent-shape cavity consists of two converging reflection surfaces, which provide the advantages of enhanced strain sensitivity when compared with elliptic or D-shaped FP cavity. The device is fabricated by fusion splicing an etched multimode fiber with a single mode fiber, and hence is simple in structure and economic in cost.

Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.

PubMed

Roy, Arijit Bardhan; Dhar, Arup; Choudhuri, Mrinmoyee; Das, Sonali; Hossain, S Minhaz; Kundu, Avra

2016-07-29

Analysis and optimization of silicon nano-structured geometry (black silicon) for photovoltaic applications has been reported. It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduced material wastage due to the etching of the silicon substrate to realize the geometry itself. It is established that even optimally designed micro-nanostructures would not be useful for conventional wafer based approaches. The work presents computational studies on how such micro-nanostructures are more potent for future ultra-thin monocrystalline silicon absorbers. For such ultra-thin absorbers, the optimally designed micro-nanostructures provide additional advantages of advanced light management capabilities as it behaves as a lossy 2D photonic crystal making the physically thin absorber optically thick along with the ability to collect photo-generated carriers orthogonal to the direction of light (radial junction) for unified photon-electron harvesting. Most significantly, the work answers the key question on how thin the monocrystalline solar absorber should be so that optimum micro-nanostructure would be able to harness the incident photons ensuring proper collection so as to reach the well-known Shockley-Queisser limit of solar cells. Flexible ultra-thin monocrystalline silicon solar cells have been fabricated using nanosphere lithography and MacEtch technique along with a synergistic association of crystalline and amorphous silicon technologies to demonstrate its physical and technological flexibilities. The outcomes are relevant so that nanotechnology may be seamlessly integrated into the technology roadmap of monocrystalline silicon solar cells as the silicon thickness should be significantly reduced without compromising the efficiency within the next decade.

Microstructural and mechanical responses to various rolling speeds determined in multi-pass break-down rolling of AZ31B alloy

NASA Astrophysics Data System (ADS)

Jia, Weitao; Tang, Yan; Ning, Fangkun; Le, Qichi; Cui, Jianzhong

2018-04-01

Different rolling operations of as-cast AZ31B alloy were performed under different rolling speed (18 ∼ 72 m min‑1) and rolling pass conditions at 400 °C. Microstructural studies, tensile testing and formability evaluation relevant to each rolling operation were investigated. For 1-pass rolling, coarse average grain size (CAGS) region gradually approached the center layer as the rolling speed increased. Moreover, twins, shear bands and coarse-grain structures were the dominant components in the microstructure of plates rolled at 18, 48 and 72 m min‑1, respectively, indicating the severe deformation inhomogeneity under the high reduction per pass condition. For 2-pass rolling and 4-pass rolling, dynamic recrystallization was observed to be well and CAGS region has substantially disappeared, indicating the significant improvement in deformation uniformity and further the grain homogenization under the conditions. Microstructure uniformity degree of 2-pass rolled plates did not vary much as the rolling speed varied. On this basis, shear band distribution dominated the deformation behavior during the uniaxial tension of the 2-pass rolled plates. However, microstructure uniformity accompanied by twin distribution played a leading role in stretching the 4-pass rolled plates.

Fully Integrated Biopotential Acquisition Analog Front-End IC

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Ko, Hyoungho

2015-01-01

A biopotential acquisition analog front-end (AFE) integrated circuit (IC) is presented. The biopotential AFE includes a capacitively coupled chopper instrumentation amplifier (CCIA) to achieve low input referred noise (IRN) and to block unwanted DC potential signals. A DC servo loop (DSL) is designed to minimize the offset voltage in the chopper amplifier and low frequency respiration artifacts. An AC coupled ripple rejection loop (RRL) is employed to reduce ripple due to chopper stabilization. A capacitive impedance boosting loop (CIBL) is designed to enhance the input impedance and common mode rejection ratio (CMRR) without additional power consumption, even under an external electrode mismatch. The AFE IC consists of two-stage CCIA that include three compensation loops (DSL, RRL, and CIBL) at each CCIA stage. The biopotential AFE is fabricated using a 0.18 µm one polysilicon and six metal layers (1P6M) complementary metal oxide semiconductor (CMOS) process. The core chip size of the AFE without input/output (I/O) pads is 10.5 mm2. A fourth-order band-pass filter (BPF) with a pass-band in the band-width from 1 Hz to 100 Hz was integrated to attenuate unwanted signal and noise. The overall gain and band-width are reconfigurable by using programmable capacitors. The IRN is measured to be 0.94 µVRMS in the pass band. The maximum amplifying gain of the pass-band was measured as 71.9 dB. The CIBL enhances the CMRR from 57.9 dB to 67 dB at 60 Hz under electrode mismatch conditions. PMID:26437404

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Yoshimura, Yudai; Shiwaku, Rei; Tran, Lam Truc; Sekine, Tomohito; Mizukami, Makoto; Kumaki, Daisuke; Tokito, Shizuo

2014-06-01

Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-μm-thick parylene-C films with high field-effect mobility (1.0 cm2 V-1 s-1) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m-2) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.

Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

NASA Astrophysics Data System (ADS)

Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

2017-05-01

Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications.

PubMed

Rahman, MuhibUr; Ko, Dong-Sik; Park, Jung-Dong

2017-09-25

We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband.

A Compact Multiple Notched Ultra-Wide Band Antenna with an Analysis of the CSRR-TO-CSRR Coupling for Portable UWB Applications

PubMed Central

Ko, Dong-Sik

2017-01-01

We present a compact ultra-wideband (UWB) antenna integrated with sharp notches with a detailed analysis of the mutual coupling of the multiple notch resonators. By utilizing complementary split ring resonators (CSRR) on the radiating semi-circular patch, we achieve the sharp notch-filtering of various bands within the UWB band without increasing the antenna size. The notched frequency bands include WiMAX, INSAT, and lower and upper WLAN. In order to estimate the frequency shifts of the notch due to the coupling of the nearby CSRRs, an analysis of the coupling among the multiple notch resonators is carried out and we construct the lumped-circuit equivalent model. The time domain analysis of the proposed antenna is performed to show its validity on the UWB application. The measured frequency response of the input port corresponds quite well with the calculations and simulations. The radiation pattern of the implemented quad-notched UWB antenna is nearly omnidirectional in the passband. PMID:28946658

A novel interferometric method for the study of the viscoelastic properties of ultra-thin polymer films determined from nanobubble inflation

NASA Astrophysics Data System (ADS)

Chapuis, P.; Montgomery, P. C.; Anstotz, F.; Leong-Hoï, A.; Gauthier, C.; Baschnagel, J.; Reiter, G.; McKenna, G. B.; Rubin, A.

2017-09-01

Glass formation and glassy behavior remain as the important areas of investigation in soft matter physics with many aspects which are still not completely understood, especially at the nanometer size-scale. In the present work, we show an extension of the "nanobubble inflation" method developed by O'Connell and McKenna [Rev. Sci. Instrum. 78, 013901 (2007)] which uses an interferometric method to measure the topography of a large array of 5 μ m sized nanometer thick films subjected to constant inflation pressures during which the bubbles grow or creep with time. The interferometric method offers the possibility of making measurements on multiple bubbles at once as well as having the advantage over the AFM methods of O'Connell and McKenna of being a true non-contact method. Here we demonstrate the method using ultra-thin films of both poly(vinyl acetate) (PVAc) and polystyrene (PS) and discuss the capabilities of the method relative to the AFM method, its advantages and disadvantages. Furthermore we show that the results from experiments on PVAc are consistent with the prior work on PVAc, while high stress results with PS show signs of a new non-linear response regime that may be related to the plasticity of the ultra-thin film.

Performance enhancement in organic photovoltaic solar cells using iridium (Ir) ultra-thin surface modifier (USM)

NASA Astrophysics Data System (ADS)

Pandey, Rina; Lim, Ju Won; Kim, Jung Hyuk; Angadi, Basavaraj; Choi, Ji Won; Choi, Won Kook

2018-06-01

In this study, Iridium (Ir) metallic layer as an ultra-thin surface modifier (USM) was deposited on ITO coated glass substrate using radio frequency magnetron sputtering for improving the photo-conversion efficiency of organic photovoltaic cells. Ultra-thin Ir acts as a surface modifier replacing the conventional hole transport layer (HTL) PEDOT:PSS in organic photovoltaic (OPV) cells with two different active layers P3HT:PC60BM and PTB7:PC70BM. The Ir USM (1.0 nm) coated on ITO glass substrate showed transmittance of 84.1% and work function of >5.0 eV, which is higher than that of ITO (4.5-4.7 eV). The OPV cells with Ir USM (1.0 nm) exhibits increased power conversion efficiency of 3.70% (for P3HT:PC60BM active layer) and 7.28% (for PTB7:PC70BM active layer) under 100 mW/cm2 illumination (AM 1.5G) which are higher than those of 3.26% and 6.95% for the same OPV cells but with PEDOT:PSS as HTL instead of Ir USM. The results reveal that the chemically stable Ir USM layer could be used as an alternative material for PEDOT:PSS in organic photovoltaic cells.

Thin films of fullerene-like MoS2 nanoparticles with ultra-low friction and wear

PubMed

Chhowalla; Amaratunga

2000-09-14

The tribological properties of solid lubricants such as graphite and the metal dichalcogenides MX2 (where M is molybdenum or tungsten and X is sulphur or selenium) are of technological interest for reducing wear in circumstances where liquid lubricants are impractical, such as in space technology, ultra-high vacuum or automotive transport. These materials are characterized by weak interatomic interactions (van der Waals forces) between their layered structures, allowing easy, low-strength shearing. Although these materials exhibit excellent friction and wear resistance and extended lifetime in vacuum, their tribological properties remain poor in the presence of humidity or oxygen, thereby limiting their technological applications in the Earth's atmosphere. But using MX2 in the form of isolated inorganic fullerene-like hollow nanoparticles similar to carbon fullerenes and nanotubes can improve its performance. Here we show that thin films of hollow MoS2 nanoparticles, deposited by a localized high-pressure arc discharge method, exhibit ultra-low friction (an order of magnitude lower than for sputtered MoS2 thin films) and wear in nitrogen and 45% humidity. We attribute this 'dry' behaviour in humid environments to the presence of curved S-Mo-S planes that prevent oxidation and preserve the layered structure.

Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu, Feng; Spring, Andrew M.; Sato, Hiromu

2015-09-21

Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that ofmore » the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.« less

Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

NASA Astrophysics Data System (ADS)

Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

2017-07-01

Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

Thin films of fullerene-like MoS2 nanoparticles with ultra-low friction and wear

NASA Astrophysics Data System (ADS)

Chhowalla, Manish; Amaratunga, Gehan A. J.

2000-09-01

The tribological properties of solid lubricants such as graphite and the metal dichalcogenides MX2 (where M is molybdenum or tungsten and X is sulphur or selenium) are of technological interest for reducing wear in circumstances where liquid lubricants are impractical, such as in space technology, ultra-high vacuum or automotive transport. These materials are characterized by weak interatomic interactions (van der Waals forces) between their layered structures, allowing easy, low-strength shearing. Although these materials exhibit excellent friction and wear resistance and extended lifetime in vacuum, their tribological properties remain poor in the presence of humidity or oxygen, thereby limiting their technological applications in the Earth's atmosphere. But using MX2 in the form of isolated inorganic fullerene-like hollow nanoparticles similar to carbon fullerenes and nanotubes can improve its performance. Here we show that thin films of hollow MoS2 nanoparticles, deposited by a localized high-pressure arc discharge method, exhibit ultra-low friction (an order of magnitude lower than for sputtered MoS2 thin films) and wear in nitrogen and 45% humidity. We attribute this `dry' behaviour in humid environments to the presence of curved S-Mo-S planes that prevent oxidation and preserve the layered structure.

Limitation of Optical Enhancement in Ultra-thin Solar Cells Imposed by Contact Selectivity.

PubMed

Islam, Raisul; Saraswat, Krishna

2018-06-11

Ultra-thin crystalline silicon (c-Si) solar cell suffers both from poor light absorption and minority carrier recombination at the contacts resulting in low contact selectivity. Yet most of the research focuses on improving the light absorption by introducing novel light trapping technique. Our work shows that for ultra-thin absorber, the benefit of optical enhancement is limited by low contact selectivity. Using simulation we observe that performance enhancement from light trapping starts to saturate as the absorber scales down because of the increase in probability of the photo-generated carriers to recombine at the metal contact. Therefore, improving the carrier selectivity of the contacts, which reduces the recombination at contacts, is important to improve the performance of the solar cell beyond what is possible by enhancing light absorption only. The impact of improving contact selectivity increases as the absorber thickness scales below 20 micrometer (μm). Light trapping provides better light management and improving contact selectivity provides better photo-generated carrier management. When better light management increases the number of photo-generated carriers, better carrier management is a useful optimization knob to achieve the efficiency close to the thermodynamic limit. Our work explores a design trade-off in detail which is often overlooked by the research community.

Ultra-Wideband Array in PCB for Millimeter-Wave 5G and ISM

NASA Technical Reports Server (NTRS)

Novak, Markus H.; Volakis, John L.; Miranda, Felix A.

2017-01-01

Growing mobile data consumption has prompted the exploration of the millimeter-wave spectrum for large bandwidth, high speed communications. However, the allocated bands are spread across a wide swath of spectrum: Fifth generation mobile architecture (5G): 28, 38, 39, 6471 GHz; Industrial, Scientific, and Medical bands (ISM): 24, 60 GHz. Moreover, high gain phased arrays are required to overcome the significant path loss associated with these frequencies. Further, it is necessary to incorporate several of these applications in a single, small size and low cost platform. To this end, we have developed a scanning, Ultra-Wideband (UWB) array which covers all 5G, ISM, and other mm-W bands from 2472 GHz. Critically, this is accomplished using mass-production Printed Circuit Board (PCB) fabrication. The results of this work are presented in this poster.

Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

DTIC Science & Technology

2014-03-27

scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs

Forest canopy height estimation using double-frequency repeat pass interferometry

NASA Astrophysics Data System (ADS)

Karamvasis, Kleanthis; Karathanassi, Vassilia

2015-06-01

In recent years, many efforts have been made in order to assess forest stand parameters from remote sensing data, as a mean to estimate the above-ground carbon stock of forests in the context of the Kyoto protocol. Synthetic aperture radar interferometry (InSAR) techniques have gained traction in last decade as a viable technology for vegetation parameter estimation. Many works have shown that forest canopy height, which is a critical parameter for quantifying the terrestrial carbon cycle, can be estimated with InSAR. However, research is still needed to understand further the interaction of SAR signals with forest canopy and to develop an operational method for forestry applications. This work discusses the use of repeat pass interferometry with ALOS PALSAR (L band) HH polarized and COSMO Skymed (X band) HH polarized acquisitions over the Taxiarchis forest (Chalkidiki, Greece), in order to produce accurate digital elevation models (DEMs) and estimate canopy height with interferometric processing. The effect of wavelength-dependent penetration depth into the canopy is known to be strong, and could potentially lead to forest canopy height mapping using dual-wavelength SAR interferometry at X- and L-band. The method is based on scattering phase center separation at different wavelengths. It involves the generation of a terrain elevation model underneath the forest canopy from repeat-pass L-band InSAR data as well as the generation of a canopy surface elevation model from repeat pass X-band InSAR data. The terrain model is then used to remove the terrain component from the repeat pass interferometric X-band elevation model, so as to enable the forest canopy height estimation. The canopy height results were compared to a field survey with 6.9 m root mean square error (RMSE). The effects of vegetation characteristics, SAR incidence angle and view geometry, and terrain slope on the accuracy of the results have also been studied in this work.

Facile design of ultra-thin anodic aluminum oxide membranes for the fabrication of plasmonic nanoarrays.

PubMed

Hao, Qi; Huang, Hao; Fan, Xingce; Hou, Xiangyu; Yin, Yin; Li, Wan; Si, Lifang; Nan, Haiyan; Wang, Huaiyu; Mei, Yongfeng; Qiu, Teng; Chu, Paul K

2017-03-10

Ultra-thin anodic aluminum oxide (AAO) membranes are efficient templates for the fabrication of patterned nanostructures. Herein, a three-step etching method to control the morphology of AAO is described. The morphological evolution of the AAO during phosphoric acid etching is systematically investigated and a nonlinear growth mechanism during unsteady-state anodization is revealed. The thickness of the AAO can be quantitatively controlled from ∼100 nm to several micrometers while maintaining the tunablity of the pore diameter. The AAO membranes are robust and readily transferable to different types of substrates to prepare patterned plasmonic nanoarrays such as nanoislands, nanoclusters, ultra-small nanodots, and core-satellite superstructures. The localized surface plasmon resonance from these nanostructures can be easily tuned by adjusting the morphology of the AAO template. The custom AAO template provides a platform for the fabrication of low-cost and large-scale functional nanoarrays suitable for fundamental studies as well as applications including biochemical sensing, imaging, photocatalysis, and photovoltaics.

Facile design of ultra-thin anodic aluminum oxide membranes for the fabrication of plasmonic nanoarrays

NASA Astrophysics Data System (ADS)

Hao, Qi; Huang, Hao; Fan, Xingce; Hou, Xiangyu; Yin, Yin; Li, Wan; Si, Lifang; Nan, Haiyan; Wang, Huaiyu; Mei, Yongfeng; Qiu, Teng; Chu, Paul K.

2017-03-01

Ultra-thin anodic aluminum oxide (AAO) membranes are efficient templates for the fabrication of patterned nanostructures. Herein, a three-step etching method to control the morphology of AAO is described. The morphological evolution of the AAO during phosphoric acid etching is systematically investigated and a nonlinear growth mechanism during unsteady-state anodization is revealed. The thickness of the AAO can be quantitatively controlled from ˜100 nm to several micrometers while maintaining the tunablity of the pore diameter. The AAO membranes are robust and readily transferable to different types of substrates to prepare patterned plasmonic nanoarrays such as nanoislands, nanoclusters, ultra-small nanodots, and core-satellite superstructures. The localized surface plasmon resonance from these nanostructures can be easily tuned by adjusting the morphology of the AAO template. The custom AAO template provides a platform for the fabrication of low-cost and large-scale functional nanoarrays suitable for fundamental studies as well as applications including biochemical sensing, imaging, photocatalysis, and photovoltaics.

Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

NASA Astrophysics Data System (ADS)

Zang, Yaping; Zhang, Fengjiao; Huang, Dazhen; Gao, Xike; di, Chong-An; Zhu, Daoben

2015-03-01

The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa-1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications.

Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn

2014-06-28

By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thinmore » non-doped orange emission layer in WOLEDs.« less

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

PubMed Central

Zang, Yaping; Zhang, Fengjiao; Huang, Dazhen; Gao, Xike; Di, Chong-an; Zhu, Daoben

2015-01-01

The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa−1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications. PMID:25872157

2-µm wavelength-range low-loss inhibited-coupling hollow-core PCF

NASA Astrophysics Data System (ADS)

Maurel, M.; Chafer, M.; Delahaye, F.; Amrani, F.; Debord, B.; Gerome, F.; Benabid, F.

2018-02-01

We report on the design and fabrication of inhibited-coupling guiding hollow-core photonic crystal fiber with a transmission band optimized for low loss guidance around 2 μm. Two fibers design based on a Kagome-lattice cladding have been studied to demonstrate a minimum loss figure of 25 dB/km at 2 μm associated to an ultra-broad transmission band spanning from the visible to our detection limit of 3.4 μm. Such fibers could be an excellent tool to deliver and compress ultra-short pulse laser systems, especially for the emerging 2-3 μm spectral region.

Ultra-thin grain-oriented silicon steel sheet fabricated by a novel way: Twin-roll strip casting and two-stage cold rolling

NASA Astrophysics Data System (ADS)

Wang, Yin-Ping; Liu, Hai-Tao; Song, Hong-Yu; Liu, Jia-Xin; Shen, Hui-Ying; Jin, Yang; Wang, Guo-Dong

2018-04-01

0.05-0.15 mm-thick ultra-thin grain-oriented silicon steel sheets were successfully produced by a novel processing route including strip casting, hot rolling, normalizing, two-stage cold rolling with intermediate annealing, primary recrystallization annealing and secondary recrystallization annealing. The evolutions of microstructure, texture and inhibitor along the processing were briefly investigated. The results showed that the initial Goss orientation originated due to the heterogenous nucleation of δ-ferrite grains during solidification. Because of the lack of shear deformation, only a few Goss grains were observed in the hot rolled sheet. After the first cold rolling and intermediate annealing, Goss texture was enhanced and distributed in the whole thickness. A small number of Goss grains having a high fraction of high energy boundaries exhibited in the primary recrystallization annealed sheet. A large number of fine and dispersed MnS and AlN and a few co-precipitates MnS and AlN with the size range of 10-70 nm were also observed. Interestingly, a well-developed secondary recrystallization microstructure characterized by 10-60 mm grains and a sharp Goss texture were finally produced in the 0.05-0.15 mm-thick ultra-thin sheets. A magnetic induction B8 of 1.72-1.84 T was obtained. Another new finding was that a few {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains also can grow up abnormally because of the high fraction of high energy boundaries and the size and number advantage, respectively. These non-Goss grains finally deteriorated the magnetic properties of the ultra-thin sheets. In addition, low surface energies of {hk0} planes may also contribute to the abnormal growth of Goss, {2 3 0}〈0 0 1〉 and {2 1 0}〈1 2 7〉 grains.

Characterization and Simulation of Transient Vibrations Using Band Limited Temporal Moments

DOE PAGES

Smallwood, David O.

1994-01-01

A method is described to characterize shocks (transient time histories) in terms of the Fourier energy spectrum and the temporal moments of the shock passed through a contiguous set of band pass filters. The product model is then used to generate of a random process as simulations that in the mean will have the same energy and moments as the characterization of the transient event.

47 CFR 25.264 - Requirements to facilitate reverse-band operation in the 17.3-17.8 GHz band of 17/24 GHz...

Code of Federal Regulations, 2014 CFR

2014-10-01

... of travel of the satellite; the Y axis is parallel to a line passing through the geographic north and south poles of the Earth, with the positive direction pointing south; and the Z axis passes through the satellite and the center of the Earth, with the positive direction pointing toward the Earth, the applicant...

47 CFR 25.264 - Requirements to facilitate reverse-band operation in the 17.3-17.8 GHz band of 17/24 GHz...

Code of Federal Regulations, 2012 CFR

2012-10-01

... of travel of the satellite; the Y axis is parallel to a line passing through the geographic north and south poles of the Earth, with the positive direction pointing south; and the Z axis passes through the satellite and the center of the Earth, with the positive direction pointing toward the Earth, the applicant...

47 CFR 25.264 - Requirements to facilitate reverse-band operation in the 17.3-17.8 GHz band of 17/24 GHz...

Code of Federal Regulations, 2011 CFR

2011-10-01

... of travel of the satellite; the Y axis is parallel to a line passing through the geographic north and south poles of the Earth, with the positive direction pointing south; and the Z axis passes through the satellite and the center of the Earth, with the positive direction pointing toward the Earth, the applicant...

47 CFR 25.264 - Requirements to facilitate reverse-band operation in the 17.3-17.8 GHz band of 17/24 GHz...

Code of Federal Regulations, 2013 CFR

2013-10-01

... of travel of the satellite; the Y axis is parallel to a line passing through the geographic north and south poles of the Earth, with the positive direction pointing south; and the Z axis passes through the satellite and the center of the Earth, with the positive direction pointing toward the Earth, the applicant...

Continuously tunable optical notch filter and band-pass filter systems that cover the visible to near-infrared spectral ranges.

PubMed

Jeong, Mi-Yun; Mang, Jin Yeob

2018-03-10

Spatially continuous tunable optical notch and band-pass filter systems that cover the visible (VIS) and near-infrared (NIR) spectral ranges from ∼460  nm to ∼1,000  nm are realized by combining left- and right-handed circular cholesteric liquid crystal (CLC) wedge cells with continuous pitch gradient. The notch filter system is polarization independent in all of the spectral ranges. The band-pass filter system, when the left- and right-handed CLCs are arranged in a row, is polarization independent, while when they are arranged at right angles, they are polarization dependent; furthermore, the full-width at half-maximum of the band-pass filter can be changed reversibly from the original bandwidth of 36 nm to 16 nm. Depending on the CLC materials, this strategy could be applied to the UV, VIS, and IR spectral ranges. Due to the high performance in the broad spectral range, cost-effective facile fabrication process, simple mechanical control, and small size, it is expected that our optical tunable filter strategies could become one of the key parts of laser-based Raman spectroscopy, fluorescence, life science devices, optical communication systems, astronomical telescopes, and so forth.

Broadband unidirectional cloaks based on flat metasurface focusing lenses

NASA Astrophysics Data System (ADS)

Li, Yongfeng; Zhang, Jieqiu; Qu, Shaobo; Wang, Jiafu; Pang, Yongqiang; Xu, Zhuo; Zhang, Anxue

2015-08-01

Bandwidth extension and thickness reduction are now the two key issues of cloaks. In this paper, we propose to achieve broadband, thin uni-directional electromagnetic (EM) cloaks using metasurfaces. To this end, a wideband flat focusing lens is firstly devised based on high-efficiency transmissive metasurfaces. Due to the nearly dispersionless parabolic phase profile along the metasurface in the operating band, incident plane waves can be focused efficiently after passing through the metasurface. Broadband unidirectional EM cloaks were then designed by combining two identical flat lenses. Upon illumination, the incident plane waves are firstly focused by one lens and then are restored by the other lens, avoiding the cloaked region. Both simulation and experiment results verify the broadband unidirectional cloak. The broad bandwidth and small thickness of such cloaks have potential applications in achieving invisibility for electrically large objects.

Ubiquitylation by Trim32 causes coupled loss of desmin, Z-bands, and thin filaments in muscle atrophy

PubMed Central

Cohen, Shenhav; Zhai, Bo; Gygi, Steven P.

2012-01-01

During muscle atrophy, myofibrillar proteins are degraded in an ordered process in which MuRF1 catalyzes ubiquitylation of thick filament components (Cohen et al. 2009. J. Cell Biol. http://dx.doi.org/10.1083/jcb.200901052). Here, we show that another ubiquitin ligase, Trim32, ubiquitylates thin filament (actin, tropomyosin, troponins) and Z-band (α-actinin) components and promotes their degradation. Down-regulation of Trim32 during fasting reduced fiber atrophy and the rapid loss of thin filaments. Desmin filaments were proposed to maintain the integrity of thin filaments. Accordingly, we find that the rapid destruction of thin filament proteins upon fasting was accompanied by increased phosphorylation of desmin filaments, which promoted desmin ubiquitylation by Trim32 and degradation. Reducing Trim32 levels prevented the loss of both desmin and thin filament proteins. Furthermore, overexpression of an inhibitor of desmin polymerization induced disassembly of desmin filaments and destruction of thin filament components. Thus, during fasting, desmin phosphorylation increases and enhances Trim32-mediated degradation of the desmin cytoskeleton, which appears to facilitate the breakdown of Z-bands and thin filaments. PMID:22908310

Versatile Molecular Silver Ink Platform for Printed Flexible Electronics.

PubMed

Kell, Arnold J; Paquet, Chantal; Mozenson, Olga; Djavani-Tabrizi, Iden; Deore, Bhavana; Liu, Xiangyang; Lopinski, Gregory P; James, Robert; Hettak, Khelifa; Shaker, Jafar; Momciu, Adrian; Ferrigno, Julie; Ferrand, Olivier; Hu, Jian Xiong; Lafrenière, Sylvie; Malenfant, Patrick R L

2017-05-24

A silver molecular ink platform formulated for screen, inkjet, and aerosol jet printing is presented. A simple formulation comprising silver neodecanoate, ethyl cellulose, and solvent provides improved performance versus that of established inks, yet with improved economics. Thin, screen-printed traces with exceptional electrical (<10 mΩ/□/mil or 12 μΩ·cm) and mechanical properties are achieved following thermal or photonic sintering, the latter having never been demonstrated for silver-salt-based inks. Low surface roughness, submicron thicknesses, and line widths as narrow as 41 μm outperform commercial ink benchmarks based on flakes or nanoparticles. These traces are mechanically robust to flexing and creasing (less than 10% change in resistance) and bind strongly to epoxy-based adhesives. Thin traces are remarkably conformal, enabling fully printed metal-insulator-metal band-pass filters. The versatility of the molecular ink platform enables an aerosol jet-compatible ink that yields conductive features on glass with 2× bulk resistivity and strong adhesion to various plastic substrates. An inkjet formulation is also used to print top source/drain contacts and demonstrate printed high-mobility thin film transistors (TFTs) based on semiconducting single-walled carbon nanotubes. TFTs with mobility values of ∼25 cm 2 V -1 s -1 and current on/off ratios >10 4 were obtained, performance similar to that of evaporated metal contacts in analogous devices.

Enhanced infrared transmission through subwavelength hole arrays in a thin gold film mounted with dielectric micro-domes

NASA Astrophysics Data System (ADS)

Kumar, Raghwendra; Ramakrishna, S. Anantha

2018-04-01

Dielectric micro-domes were mounted on the subwavelength holes of a periodically perforated gold film such that a lens-like micro-dome covers each hole. In comparison to the extraordinary transmission through an array of bare holes in the gold film, this structure showed a further enhanced transmission over a larger range of incident angles with much larger bandwidth at mid-wave infrared wavelengths (3-4.5~μ m). The structure was fabricated using laser interference lithography, a novel back-exposure with an ultra-violet laser, and lift-off process that left behind the micro-domes of SU-8, covering each of the holes in the gold film. The measured transmittance of these perforated gold films, with and without the micro-domes, was verified by electromagnetic wave simulations. The enhanced transmittance arises from the scattered electromagnetic fields of the micro-domes, which couple the incident light efficiently via the scattered near-fields into the waveguide modes of holes in the plasmonic film. The increased transmittance and the highly enhanced and localized near-fields can be used to enhance the photo-response of infrared detectors over relevant bands, for example, the 3-4.5~μ m band that is used for thermal imaging applications.

Sinogram restoration for ultra-low-dose x-ray multi-slice helical CT by nonparametric regression

NASA Astrophysics Data System (ADS)

Jiang, Lu; Siddiqui, Khan; Zhu, Bin; Tao, Yang; Siegel, Eliot

2007-03-01

During the last decade, x-ray computed tomography (CT) has been applied to screen large asymptomatic smoking and nonsmoking populations for early lung cancer detection. Because a larger population will be involved in such screening exams, more and more attention has been paid to studying low-dose, even ultra-low-dose x-ray CT. However, reducing CT radiation exposure will increase noise level in the sinogram, thereby degrading the quality of reconstructed CT images as well as causing more streak artifacts near the apices of the lung. Thus, how to reduce the noise levels and streak artifacts in the low-dose CT images is becoming a meaningful topic. Since multi-slice helical CT has replaced conventional stop-and-shoot CT in many clinical applications, this research mainly focused on the noise reduction issue in multi-slice helical CT. The experiment data were provided by Siemens SOMATOM Sensation 16-Slice helical CT. It included both conventional CT data acquired under 120 kvp voltage and 119 mA current and ultra-low-dose CT data acquired under 120 kvp and 10 mA protocols. All other settings are the same as that of conventional CT. In this paper, a nonparametric smoothing method with thin plate smoothing splines and the roughness penalty was proposed to restore the ultra-low-dose CT raw data. Each projection frame was firstly divided into blocks, and then the 2D data in each block was fitted to a thin-plate smoothing splines' surface via minimizing a roughness-penalized least squares objective function. By doing so, the noise in each ultra-low-dose CT projection was reduced by leveraging the information contained not only within each individual projection profile, but also among nearby profiles. Finally the restored ultra-low-dose projection data were fed into standard filtered back projection (FBP) algorithm to reconstruct CT images. The rebuilt results as well as the comparison between proposed approach and traditional method were given in the results and discussions section, and showed effectiveness of proposed thin-plate based nonparametric regression method.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.