Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

DOE PAGES

Ptak, Aaron J.; Simon, John D.; Schulte, Kevin L.; ...

2017-10-18

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24%more » with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.« less

Single-graded CIGS with narrow bandgap for tandem solar cells.

PubMed

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Single-graded CIGS with narrow bandgap for tandem solar cells

PubMed Central

Avancini, Enrico; Buecheler, Stephan; Tiwari, Ayodhya N.

2018-01-01

Abstract Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells. PMID:29707066

New Multijunction Design Leads to Ultra-Efficient Solar Cell; Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2015-09-01

NREL has demonstrated a 45.7% conversion efficiency for a four-junction solar cell at 234 suns concentration. This achievement represents one of the highest photovoltaic research cell efficiencies ever achieved across all types of solar cells. NREL's new solar cell, which is designed for operation in a concentrator photovoltaic (CPV) system where it can receive more than 1,000 suns of concentrated sunlight, greatly improves earlier designs by adding an additional high quality absorber layer to achieve an ultra-high efficiency.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

The reliability and stability of multijunction amorphous silicon PV modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlson, D.E.

1995-11-01

Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies aremore » about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.« less

Graded recombination layers for multijunction photovoltaics.

PubMed

Koleilat, Ghada I; Wang, Xihua; Sargent, Edward H

2012-06-13

Multijunction devices consist of a stack of semiconductor junctions having bandgaps tuned across a broad spectrum. In solar cells this concept is used to increase the efficiency of photovoltaic harvesting, while light emitters and detectors use it to achieve multicolor and spectrally tunable behavior. In series-connected current-matched multijunction devices, the recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We recently reported a tandem solar cell in which the recombination layer was implemented using a progression of n-type oxides whose doping densities and work functions serve to connect, with negligible resistive loss at solar current densities, the constituent cells. Here we present the generalized conditions for design of efficient graded recombination layer solar devices. We report the number of interlayers and the requirements on work function and doping of each interlayer, to bridge an work function difference as high as 1.6 eV. We also find solutions that minimize the doping required of the interlayers in order to minimize optical absorption due to free carriers in the graded recombination layer (GRL). We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the interlayers.

Ultrahigh Frequency Nanomechanical Piezoresistive Amplifiers for Direct Channel-Selective Receiver Front-Ends.

PubMed

Ramezany, Alireza; Pourkamali, Siavash

2018-04-11

Channel-selective filtering and amplification in ultrahigh frequency (UHF) receiver front-ends are crucial for realization of cognitive radio systems and the future of wireless communication. In the past decade, there have been significant advances in the performance of microscale electromechanical resonant devices. However, such devices have not yet been able to meet the requirements for direct channel selection at RF. They also occupy a relatively large area on the chip making implementation of large arrays to cover several frequency bands challenging. On the other hand, electromechanical piezoresistive resonant devices are active devices that have recently shown the possibility of simultaneous signal amplification and channel-select filtering at lower frequencies. It has been theoretically predicted that if scaled down into the nanoscale, they can operate in the UHF range with a very low power consumption. Here, for the first time nanomechanical piezoresistive amplifiers with active element dimensions as small as 50 nm × 200 nm are demonstrated. With a device area of less than 1.5 μm 2 a piezoresistive amplifier operating at 730 MHz shows effective quality factor ( Q) of 89,000 for a 50Ω load and gains as high as 10 dB and Q of 330,000 for a 250Ω load while consuming 189 μW of power. On the basis of the measurement results, it is shown that for piezoresistor dimensions of 30 nm × 100 nm it is possible to get a similar performance at 2.4 GHz with device footprint of less than 0.2 μm 2 .

Multijunction photovoltaic device and method of manufacture

DOEpatents

Arya, Rejeewa R.; Catalano, Anthony W.; Bennett, Murray

1995-04-04

A multijunction photovoltaic device includes first, second, and third amorphous silicon p-i-n photovoltaic cells in a stacked arrangement. The intrinsic layers of the second and third cells are formed of a-SiGe alloys with differing ratios of Ge such that the bandgap of the intrinsic layers respectively decrease from the first uppermost cell to the third lowermost cell. An interface layer, composed of a doped silicon compound, is disposed between the two cells and has a lower bandgap than the respective n- and p-type adjacent layers of the first and second cells. The interface layer forms an ohmic contact with the one of the adjacent cell layers of the same conductivity type, and a tunnel junction with the other of the adjacent cell layers.

Optimization of antireflection coating design for multijunction solar cells and concentrator systems

NASA Astrophysics Data System (ADS)

Valdivia, Christopher E.; Desfonds, Eric; Masson, Denis; Fafard, Simon; Carlson, Andrew; Cook, John; Hall, Trevor J.; Hinzer, Karin

2008-06-01

Photovoltaic solar cells are a route towards local, environmentally benign, sustainable and affordable energy solutions. Antireflection coatings are necessary to input a high percentage of available light for photovoltaic conversion, and therefore have been widely exploited for silicon solar cells. Multi-junction III-V semiconductor solar cells have achieved the highest efficiencies of any photovoltaic technology, yielding up to 40% in the laboratory and 37% in commercial devices under varying levels of concentrated light. These devices benefit from a wide absorption spectrum (300- 1800 nm), but this also introduces significant challenges for antireflection coating design. Each sub-cell junction is electrically connected in series, limiting the overall device photocurrent by the lowest current-producing junction. Therefore, antireflection coating optimization must maximize the current from the limiting sub-cells at the expense of the others. Solar concentration, necessary for economical terrestrial deployment of multi-junction solar cells, introduces an angular-dependent irradiance spectrum. Antireflection coatings are optimized for both direct normal incidence in air and angular incidence in an Opel Mk-I concentrator, resulting in as little as 1-2% loss in photocurrent as compared to an ideal zero-reflectance solar cell, showing a similar performance to antireflection coatings on silicon solar cells. A transparent conductive oxide layer has also been considered to replace the metallic-grid front electrode and for inclusion as part of a multi-layer antireflection coating. Optimization of the solar cell, antireflection coating, and concentrator system should be considered simultaneously to enable overall optimal device performance.

A pilot study of the efficacy of the POLARGEN® ultrahigh-frequency electric field (40.68 MHz) radiofrequency device in the treatment of facial contouring.

PubMed

Kim, Miri; Lim, Jihong; Bae, Jung Min; Park, Hyun Jeong

2017-11-01

Various radiofrequency (RF) devices are used to treat skin laxity and face contouring, but few studies have examined ultrahigh-frequency (UHF) electric field (40.68 MHz) RF devices. To evaluate the efficacy and safety of a UHF electric field (40.68 MHz) RF device for skin tightening and face contouring. Ten patients each underwent four sessions of UHF electric field RF device treatment at 2-week intervals. Clinical improvement was evaluated with the patient satisfaction score using a six-point scale, and clinical photographs taken at every visit and 2 months after the RF treatment were assessed. Skin biopsies were obtained from one patient before the first treatment and immediately after the last treatment. Adverse reactions were recorded at every follow-up visit. All patients were women with a mean age of 51.7 ± 7.2 years. The mean satisfaction score was 4.5 ± 0.9 immediately after the last treatment session. Cheek, jawline, and neck enhancement and tightening were apparent in all patients. Side effects were minimal, and there were no burns or major complications. The UHF electric field RF device was effective for skin tightening and facial contouring, without significant adverse reactions.

Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3 as insulator layer for energy harvesting applications

NASA Astrophysics Data System (ADS)

Inac, Mesut; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

2015-09-01

Antenna-coupled metal-insulator-metal devices are most potent candidate for future energy harvesting devices. The reason for that they are ultra-high speed devices that can rectify the electromagnetic radiation at high frequencies. In addition to their speed, they are also small devices that can have more number of devices in unit area. In this work, it is aimed design and develop a device which can harvest and detect IR radiation.

Device Performance Capabilities | Photovoltaic Research | NREL

Science.gov Websites

multijunction cells and modules. We use I-V measurement systems to assess the main performance parameters for PV cells and modules. I-V measurement systems determine the output performance of devices, including: open the device (η). Some I-V systems may also be used to perform dark I-V measurements to determine diode

Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

PubMed Central

Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

2015-01-01

World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

An electrostatic glass actuator for ultrahigh vacuum: A rotating light trap for continuous beams of laser-cooled atoms.

PubMed

Füzesi, F; Jornod, A; Thomann, P; Plimmer, M D; Dudle, G; Moser, R; Sache, L; Bleuler, H

2007-10-01

This article describes the design, characterization, and performance of an electrostatic glass actuator adapted to an ultrahigh vacuum environment (10(-8) mbar). The three-phase rotary motor is used to drive a turbine that acts as a velocity-selective light trap for a slow continuous beam of laser-cooled atoms. This simple, compact, and nonmagnetic device should find applications in the realm of time and frequency metrology, as well as in other areas of atomic, molecular physics and elsewhere.

A High-Voltage Molecular-Engineered Organic Sensitizer-Iron Redox Shuttle Pair: 1.4 V DSSC and 3.3 V SSM-DSSC Devices.

PubMed

Rodrigues, Roberta R; Cheema, Hammad; Delcamp, Jared H

2018-05-04

The development of high voltage solar cells is an attractive way to use sunlight for solar-to-fuel devices, multijunction solar-to-electric systems, and to power limited-area consumer electronics. By designing a low-oxidation-potential organic dye (RR9)/redox shuttle (Fe(bpy) 3 3+/2+ ) pair for dye-sensitized solar-cell (DSSC) devices, the highest single device photovoltage (1.42 V) has been realized for a DSSC not relying on doped TiO 2 . Additionally, Fe(bpy) 3 3+/2+ offers a robust, readily tunable ligand platform for redox potential tuning. RR9 can be regenerated with a low driving force (190 mV), and by utilizing the RR9/Fe(bpy) 3 3+/2+ redox shuttle pair in a subcell for a sequential series multijunction (SSM)-DSSC system, one of the highest known three subcell photovoltage was attained for any solar-cell technology (3.34 V, >1.0 V per subcell). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

NASA Astrophysics Data System (ADS)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

A review on nanomechanical resonators and their applications in sensors and molecular transportation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arash, Behrouz; Rabczuk, Timon, E-mail: timon.rabczuk@uni-weimar.de; Jiang, Jin-Wu

2015-06-15

Nanotechnology has opened a new area in science and engineering, leading to the development of novel nano-electromechanical systems such as nanoresonators with ultra-high resonant frequencies. The ultra-high-frequency resonators facilitate wide-ranging applications such as ultra-high sensitive sensing, molecular transportation, molecular separation, high-frequency signal processing, and biological imaging. This paper reviews recent studies on dynamic characteristics of nanoresonators. A variety of theoretical approaches, i.e., continuum modeling, molecular simulations, and multiscale methods, in modeling of nanoresonators are reviewed. The potential application of nanoresonators in design of sensor devices and molecular transportation systems is introduced. The essence of nanoresonator sensors for detection of atomsmore » and molecules with vibration and wave propagation analyses is outlined. The sensitivity of the resonator sensors and their feasibility in detecting different atoms and molecules are particularly discussed. Furthermore, the applicability of molecular transportation using the propagation of mechanical waves in nanoresonators is presented. An extended application of the transportation methods for building nanofiltering systems with ultra-high selectivity is surveyed. The article aims to provide an up-to-date review on the mechanical properties and applications of nanoresonators, and inspire additional potential of the resonators.« less

High fabrication yield organic tandem photovoltaics combining vacuum- and solution-processed subcells with 15% efficiency

NASA Astrophysics Data System (ADS)

Che, Xiaozhou; Li, Yongxi; Qu, Yue; Forrest, Stephen R.

2018-05-01

Multijunction solar cells are effective for increasing the power conversion efficiency beyond that of single-junction cells. Indeed, the highest solar cell efficiencies have been achieved using two or more subcells to adequately cover the solar spectrum. However, the efficiencies of organic multijunction solar cells are ultimately limited by the lack of high-performance, near-infrared absorbing organic subcells within the stack. Here, we demonstrate a tandem cell with an efficiency of 15.0 ± 0.3% (for 2 mm2 cells) that combines a solution-processed non-fullerene-acceptor-based infrared absorbing subcell on a visible-absorbing fullerene-based subcell grown by vacuum thermal evaporation. The hydrophilic-hydrophobic interface within the charge-recombination zone that connects the two subcells leads to >95% fabrication yield among more than 130 devices, and with areas up to 1 cm2. The ability to stack solution-based on vapour-deposited cells provides significant flexibility in design over the current, all-vapour-deposited multijunction structures.

A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

DOE PAGES

Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; ...

2015-03-24

With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm 2 2-terminal monolithic perovskite/silicon multijunction solar cell with a V OC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

Color tunable monolithic InGaN/GaN LED having a multi-junction structure.

PubMed

Kong, Duk-Jo; Kang, Chang-Mo; Lee, Jun-Yeob; Kim, James; Lee, Dong-Seon

2016-03-21

In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al₂O₃ structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.

A graphene based frequency quadrupler

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-04-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices.

A graphene based frequency quadrupler

PubMed Central

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-01-01

Benefit from exceptional electrical transport properties, graphene receives worldwide attentions, especially in the domain of high frequency electronics. Due to absence of effective bandgap causing off-state the device, graphene material is extraordinarily suitable for analog circuits rather than digital applications. With this unique ambipolar behavior, graphene can be exploited and utilized to achieve high performance for frequency multipliers. Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. Two Dirac points in the transfer curves of the designed GFETs can be observed by tuning top-gate voltages, which is essential to generate the fourth harmonic. By applying 200 kHz sinusoid input, arround 50% of the output signal radio frequency power is concentrated at the desired frequency of 800 kHz. Additionally, in suitable operation areas, our devices can work as high performance frequency doublers and frequency triplers. Considered both simple device structure and potential superhigh carrier mobility of graphene material, graphene-based frequency quadruplers may have lots of superiorities in regards to ultrahigh frequency electronic applications in near future. Moreover, versatility of carbon material system is far-reaching for realization of complementary metal-oxide-semiconductor compatible electrically active devices. PMID:28418013

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

NASA Technical Reports Server (NTRS)

Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

2005-01-01

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Ultrahigh Energy Density in SrTiO3 Film Capacitors.

PubMed

Hou, Chuangming; Huang, Weichuan; Zhao, Wenbo; Zhang, Dalong; Yin, Yuewei; Li, Xiaoguang

2017-06-21

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew; Landini, Barbara

2015-09-28

Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction,more » single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

DOE PAGES

Schulte, Kevin L.; France, Ryan M.; Geisz, John F.

2016-11-11

The development of compositionally graded buffer layers (CGBs) with enhanced transparency would enable novel five and six junction solar cells, with efficiencies approaching 50% under high concentration. Here, we demonstrate highly transparent grades between the GaAs and InP lattice constants on both A- and B-miscut GaAs substrates, employing Al xGayIn 1-x-yAs and highly Se-doped Burstein-Moss (BM) shifted Ga xIn 1-xP. Transparency to >810 and >890 nm wavelengths is demonstrated with BM-shifted Ga xIn 1-xP on B-miscut substrates and Al xGayIn 1-x-yAs/Ga xIn 1-xP(Se) combined grades on A-miscut substrates, respectively. 0.74 eV GaInAs solar cells grown on these transparent CGBs exhibitmore » Woc = 0.41 V at mA/ cm 2, performance comparable with the state-of-the-art Ga xIn 1-xP grade employed in the four-junction-inverted metamorphic multijunction (IMM) cell. A GaAs/0.74cV GaInAs tandem cell was grown with a transparent BM-shifted Ga xIn 1-xP CGB to verify the CGB performance in a multijunction device structure. Quantum efficiency measurements indicate that the CGB is completely transparent to photons below the GaAs bandedge, validating its use in 4-6 junction IMM devices with a single-graded buffer. Furthermore, this tandem represents a highly efficient two-junction band gap combination, achieving 29.6% ± 1.2% efficiency under the AM1.5 global spectrum, demonstrating how the additional transparency enables new device structures.« less

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE PAGES

Young, James L.; Steiner, Myles A.; Döscher, Henning; ...

2017-03-13

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Garcia, Ivan; ...

2015-10-02

The emission of light from each junction in a series-connected multijunction solar cell, we found, both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs ofmore » the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Furthermore, our techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.« less

Direct solar-to-hydrogen conversion via inverted metamorphic multi-junction semiconductor architectures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Young, James L.; Steiner, Myles A.; Döscher, Henning

Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-dopedmore » photocathodes by using a buried p-n junction. Lastly, advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.« less

Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

NASA Astrophysics Data System (ADS)

Olsson, Pär; Guillemoles, J.-F.; Domain, C.

2008-02-01

Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Würfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and Martí1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K.

Spectral binning for energy production calculations and multijunction solar cell design

DOE PAGES

Garcia, Iván; McMahon, William E.; Habte, Aron; ...

2017-09-14

Currently, most solar cells are designed for and evaluated under standard spectra intended to represent typical spectral conditions. However, no single spectrum can capture the spectral variability needed for annual energy production (AEP) calculations, and this shortcoming becomes more significant for series-connected multijunction cells as the number of junctions increases. For this reason, AEP calculations are often performed on very detailed yearlong sets of data, but these pose 2 inherent challenges: (1) These data sets comprise thousands of data points, which appear as a scattered cloud of data when plotted against typical parameters and are hence cumbersome to classify andmore » compare, and (2) large sets of spectra bring with them a corresponding increase in computation or measurement time. Here, we show how a large spectral set can be reduced to just a few 'proxy' spectra, which still retain the spectral variability information needed for AEP design and evaluation. The basic 'spectral binning' methods should be extensible to a variety of multijunction device architectures. In this study, as a demonstration, the AEP of a 4-junction device is computed for both a full set of spectra and a reduced proxy set, and the results show excellent agreement for as few as 3 proxy spectra. This enables much faster (and thereby more detailed) calculations and indoor measurements and provides a manageable way to parameterize a spectral set, essentially creating a 'spectral fingerprint,' which should facilitate the understanding and comparison of different sites.« less

Spectral binning for energy production calculations and multijunction solar cell design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Iván; McMahon, William E.; Habte, Aron

Currently, most solar cells are designed for and evaluated under standard spectra intended to represent typical spectral conditions. However, no single spectrum can capture the spectral variability needed for annual energy production (AEP) calculations, and this shortcoming becomes more significant for series-connected multijunction cells as the number of junctions increases. For this reason, AEP calculations are often performed on very detailed yearlong sets of data, but these pose 2 inherent challenges: (1) These data sets comprise thousands of data points, which appear as a scattered cloud of data when plotted against typical parameters and are hence cumbersome to classify andmore » compare, and (2) large sets of spectra bring with them a corresponding increase in computation or measurement time. Here, we show how a large spectral set can be reduced to just a few 'proxy' spectra, which still retain the spectral variability information needed for AEP design and evaluation. The basic 'spectral binning' methods should be extensible to a variety of multijunction device architectures. In this study, as a demonstration, the AEP of a 4-junction device is computed for both a full set of spectra and a reduced proxy set, and the results show excellent agreement for as few as 3 proxy spectra. This enables much faster (and thereby more detailed) calculations and indoor measurements and provides a manageable way to parameterize a spectral set, essentially creating a 'spectral fingerprint,' which should facilitate the understanding and comparison of different sites.« less

Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

NASA Astrophysics Data System (ADS)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy; Geisz, John F.; Steiner, Myles A.; Horowitz, Kelsey; Barraud, Loris; Ward, J. Scott; Schnabel, Manuel; Descoeudres, Antoine; Young, David L.; Woodhouse, Michael; Despeisse, Matthieu; Ballif, Christophe; Tamboli, Adele

2017-09-01

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the record III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.

Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Essig, Stephanie; Allebé, Christophe; Remo, Timothy

Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stacked subcells, each absorbing a different part of the solar spectrum. Here, we show that dual-junction III-V//Sidevices with mechanically stacked, independently operated III-V and Si cells reach cumulative one-sun efficiencies up to 32.8%. Efficiencies up to 35.9% were achieved when combining a GaInP/GaAs dual-junction cell with a Si single-junction cell. These efficiencies exceed both the theoretical 29.4% efficiency limit of conventional Si technology and the efficiency of the recordmore » III-V dual-junction device (32.6%), highlighting the potential of Si-based multi-junction solar cells. However, techno-economic analysis reveals an order-of-magnitude disparity between the costs for III-V//Si tandem cells and conventional Si solar cells, which can be reduced if research advances in low-cost III-V growth techniques and new substrate materials are successful.« less

Solar cell system having alternating current output

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1980-01-01

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

Modeling and optimal designs for dislocation and radiation tolerant single and multijunction solar cells

NASA Astrophysics Data System (ADS)

Mehrotra, A.; Alemu, A.; Freundlich, A.

2011-02-01

Crystalline defects (e.g. dislocations or grain boundaries) as well as electron and proton induced defects cause reduction of minority carrier diffusion length which in turn results in degradation of efficiency of solar cells. Hetro-epitaxial or metamorphic III-V devices with low dislocation density have high BOL efficiencies but electron-proton radiation causes degradation in EOL efficiencies. By optimizing the device design (emitter-base thickness, doping) we can obtain highly dislocated metamorphic devices that are radiation resistant. Here we have modeled III-V single and multi junction solar cells using drift and diffusion equations considering experimental III-V material parameters, dislocation density, 1 Mev equivalent electron radiation doses, thicknesses and doping concentration. Thinner device thickness leads to increment in EOL efficiency of high dislocation density solar cells. By optimizing device design we can obtain nearly same EOL efficiencies from high dislocation solar cells than from defect free III-V multijunction solar cells. As example defect free GaAs solar cell after optimization gives 11.2% EOL efficiency (under typical 5x1015cm-2 1 MeV electron fluence) while a GaAs solar cell with high dislocation density (108 cm-2) after optimization gives 10.6% EOL efficiency. The approach provides an additional degree of freedom in the design of high efficiency space cells and could in turn be used to relax the need for thick defect filtering buffer in metamorphic devices.

Ultra-High Frequency Superconductive Devices

DTIC Science & Technology

1991-05-01

indicate that NbN, -,C sputtered from a Nb target in an Ar/ N1 /C4 ambient 4.s with inctions can be successfully employed as local oscillators at no...oic h eie austoe deece . Figurue oesotu o ja aA-te 3.riato Measehloa osciors sina htigh L eletoe tion~~~~~~~~~~~~~n frqunc ofqunc the shw nfgr

High frequency circular translation pin-on-disk method for accelerated wear testing of ultrahigh molecular weight polyethylene as a bearing material in total hip arthroplasty.

PubMed

Saikko, Vesa

2015-01-21

The temporal change of the direction of sliding relative to the ultrahigh molecular weight polyethylene (UHMWPE) component of prosthetic joints is known to be of crucial importance with respect to wear. One complete revolution of the resultant friction vector is commonly called a wear cycle. It was hypothesized that in order to accelerate the wear test, the cycle frequency may be substantially increased if the circumference of the slide track is reduced in proportion, and still the wear mechanisms remain realistic and no overheating takes place. This requires an additional slow motion mechanism with which the lubrication of the contact is maintained and wear particles are conveyed away from the contact. A three-station, dual motion high frequency circular translation pin-on-disk (HF-CTPOD) device with a relative cycle frequency of 25.3 Hz and an average sliding velocity of 27.4 mm/s was designed. The pins circularly translated at high frequency (1.0 mm per cycle, 24.8 Hz, clockwise), and the disks at low frequency (31.4mm per cycle, 0.5 Hz, counter-clockwise). In a 22 million cycle (10 day) test, the wear rate of conventional gamma-sterilized UHMWPE pins against polished CoCr disks in diluted serum was 1.8 mg per 24 h, which was six times higher than that in the established 1 Hz CTPOD device. The wear mechanisms were similar. Burnishing of the pin was the predominant feature. No overheating took place. With the dual motion HF-CTPOD method, the wear testing of UHMWPE as a bearing material in total hip arthroplasty can be substantially accelerated without concerns of the validity of the wear simulation. Copyright © 2014 Elsevier Ltd. All rights reserved.

Note: Ultra-high frequency ultra-low dc power consumption HEMT amplifier for quantum measurements in millikelvin temperature range.

PubMed

Korolev, A M; Shnyrkov, V I; Shulga, V M

2011-01-01

We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 μW at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices.

Frequency agile microwave photonic notch filter with anomalously high stopband rejection.

PubMed

Marpaung, David; Morrison, Blair; Pant, Ravi; Eggleton, Benjamin J

2013-11-01

We report a novel class microwave photonic (MWP) notch filter with a very narrow isolation bandwidth (10 MHz), an ultrahigh stopband rejection (>60 dB), a wide frequency tuning (1-30 GHz), and flexible bandwidth reconfigurability (10-65 MHz). This performance is enabled by a new concept of sideband amplitude and phase controls using an electro-optic modulator and an optical filter. This concept enables energy efficient operation in active MWP notch filters, and opens up a pathway toward enabling low-power nanophotonic devices as high-performance RF filters.

Planar concentrators at the étendue limit

NASA Astrophysics Data System (ADS)

Winston, Roland; Gordon, Jeffrey M.

2005-08-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultra-compact planar dielectric-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multi-junction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm2 cell.

Ultrahigh density alignment of carbon nanotube arrays by dielectrophoresis.

PubMed

Shekhar, Shashank; Stokes, Paul; Khondaker, Saiful I

2011-03-22

We report ultrahigh density assembly of aligned single-walled carbon nanotube (SWNT) two-dimensional arrays via AC dielectrophoresis using high-quality surfactant-free and stable SWNT solutions. After optimization of frequency and trapping time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/μm to more than 30 SWNT/μm by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/μm is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results in a dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field-effect transistors with high current on-off ratio. Ultrahigh density alignment reported here will have important implications in fabricating high-quality devices for digital and analog electronics.

Radiation sterilization of medical devices. Effects of ionizing radiation on ultra-high molecular-weight polyethylene

NASA Astrophysics Data System (ADS)

Buchalla, R.; Schüttler, C.; Bögl, K. W.

1995-02-01

Sterilization by ionizing radiation has become, next to ethylene oxide treament, the most important "cold" sterilization process for medical devices made from plastics. The effects of ionizing radiation on the most important polymer for medical devices, ultra-high molecular-weight polyethylene, are briefly described in this review.

Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

DOEpatents

Yang, Liyou

1993-10-26

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Integrated Phase Array Antenna/Solar Cell System for Flexible Access Communication (IA/SAC)

NASA Technical Reports Server (NTRS)

Clark, E. B.; Lee, R. Q.; Pal, A. T.; Wilt, D. M.; McElroy, B. D.; Mueller, C. H.

2005-01-01

This paper describes recent efforts to integrate advanced solar cells with printed planar antennas. Several previous attempts have been reported in the literature, but this effort is unique in several ways. It uses Gallium Arsenide (GaAs) multi-junction solar cell technology. The solar cells and antennas will be integrated onto a common GaAs substrate. When fully implemented, IA/SAC will be capable of dynamic beam steering. In addition, this program targets the X-band (8 - 12 GHz) and higher frequencies, as compared to the 2.2 - 2.9 GHz arrays targeted by other organizations. These higher operating frequencies enable a greater bandwidth and thus higher data transfer rates. The first phase of the effort involves the development of 2 x 2 cm GaAs Monolithically Integrated Modules (MIM) with integrated patch antennas on the opposite side of the substrate. Subsequent work will involve the design and development of devices having the GaAs MIMs and the antennas on the same side of the substrate. Results from the phase one efforts will be presented.

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

2001-01-01

A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

Bridging ultrahigh-Q devices and photonic circuits

NASA Astrophysics Data System (ADS)

Yang, Ki Youl; Oh, Dong Yoon; Lee, Seung Hoon; Yang, Qi-Fan; Yi, Xu; Shen, Boqiang; Wang, Heming; Vahala, Kerry

2018-05-01

Optical microresonators are essential to a broad range of technologies and scientific disciplines. However, many of their applications rely on discrete devices to attain challenging combinations of ultra-low-loss performance (ultrahigh Q) and resonator design requirements. This prevents access to scalable fabrication methods for photonic integration and lithographic feature control. Indeed, finding a microfabrication bridge that connects ultrahigh-Q device functions with photonic circuits is a priority of the microcavity field. Here, an integrated resonator having a record Q factor over 200 million is presented. Its ultra-low-loss and flexible cavity design brings performance to integrated systems that has been the exclusive domain of discrete silica and crystalline microcavity devices. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence/low-threshold Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future photonic circuits and systems.

Analysis of a four lamp flash system for calibrating multi-junction solar cells under concentrated light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schachtner, Michael, E-mail: michael.schachtner@ise.fraunhofer.de; Prado, Marcelo Loyo; Reichmuth, S. Kasimir

2015-09-28

It has been known for a long time that the precise characterization of multi-junction solar cells demands spectrally tunable solar simulators. The calibration of innovative multi-junction solar cells for CPV applications now requires tunable solar simulators which provide high irradiation levels. This paper describes the commissioning and calibration of a flash-based four-lamp simulator to be used for the measurement of multi-junction solar cells with up to four subcells under concentrated light.

Towards thermal noise free optomechanics

NASA Astrophysics Data System (ADS)

Page, Michael A.; Zhao, Chunnong; Blair, David G.; Ju, Li; Ma, Yiqiu; Pan, Huang-Wei; Chao, Shiuh; Mitrofanov, Valery P.; Sadeghian, Hamed

2016-11-01

Thermal noise generally greatly exceeds quantum noise in optomechanical devices unless the mechanical frequency is very high or the thermodynamic temperature is very low. This paper addresses the design concept for a novel optomechanical device capable of ultrahigh quality factors in the audio frequency band with negligible thermal noise. The proposed system consists of a minimally supported millimeter scale pendulum mounted in a double end-mirror sloshing cavity that is topologically equivalent to a membrane-in-the-middle cavity. The radiation pressure inside the high-finesse cavity allows for high optical stiffness, cancellation of terms which lead to unwanted negative damping and suppression of quantum radiation pressure noise. We solve the optical spring dynamics of the system using the Hamiltonian, find the noise spectral density and show that stable optical trapping is possible. We also assess various loss mechanisms, one of the most important being the acceleration loss due to the optical spring. We show that practical devices, starting from a centre-of-mass pendulum frequency of 0.1 Hz, could achieve a maximum quality factor of (1014) with optical spring stiffened frequency 1-10 kHz. Small resonators of mass 1 ≤ft(μ \\right) g or less could achieve a Q-factor of (1011) at a frequency of 100 kHz. Applications for such devices include white light cavities for improvement of gravitational wave detectors, or sensors able to operate near the quantum limit.

Ultraminiaturized photovoltaic and radio frequency powered optoelectronic systems for wireless optogenetics.

PubMed

Park, Sung Il; Shin, Gunchul; Banks, Anthony; McCall, Jordan G; Siuda, Edward R; Schmidt, Martin J; Chung, Ha Uk; Noh, Kyung Nim; Mun, Jonathan Guo-Han; Rhodes, Justin; Bruchas, Michael R; Rogers, John A

2015-10-01

Wireless control and power harvesting systems that operate injectable, cellular-scale optoelectronic components provide important demonstrated capabilities in neuromodulatory techniques such as optogenetics. Here, we report a radio frequency (RF) control/harvesting device that offers dramatically reduced size, decreased weight and improved efficiency compared to previously reported technologies. Combined use of this platform with ultrathin, multijunction, high efficiency solar cells allows for hundred-fold reduction of transmitted RF power, which greatly enhances the wireless coverage. Fabrication involves separate construction of the harvester and the injectable µ-ILEDs. To test whether the presence of the implantable device alters behavior, we implanted one group of wild type mice and compared sociability behavior to unaltered controls. Social interaction experiments followed protocols defined by Silverman et al. with minor modifications. The results presented here demonstrate that miniaturized RF harvesters, and RF control strategies with photovoltaic harvesters can, when combined with injectable µ-ILEDs, offer versatile capabilities in optogenetics. Experimental and modeling studies establish a range of effective operating conditions for these two approaches. Optogenetics studies with social groups of mice demonstrate the utility of these systems. The addition of miniaturized, high performance photovoltaic cells significantly expands the operating range and reduces the required RF power. The platform can offer capabilities to modulate signaling path in the brain region of freely-behaving animals. These suggest its potential for widespread use in neuroscience.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Chemically etched ultrahigh-Q wedge-resonator on a silicon chip

NASA Astrophysics Data System (ADS)

Lee, Hansuek; Chen, Tong; Li, Jiang; Yang, Ki Youl; Jeon, Seokmin; Painter, Oskar; Vahala, Kerry J.

2012-06-01

Ultrahigh-Q optical resonators are being studied across a wide range of fields, including quantum information, nonlinear optics, cavity optomechanics and telecommunications. Here, we demonstrate a new resonator with a record Q-factor of 875 million for on-chip devices. The fabrication of our device avoids the requirement for a specialized processing step, which in microtoroid resonators has made it difficult to control their size and achieve millimetre- and centimetre-scale diameters. Attaining these sizes is important in applications such as microcombs and potentially also in rotation sensing. As an application of size control, stimulated Brillouin lasers incorporating our device are demonstrated. The resonators not only set a new benchmark for the Q-factor on a chip, but also provide, for the first time, full compatibility of this important device class with conventional semiconductor processing. This feature will greatly expand the range of possible `system on a chip' functions enabled by ultrahigh-Q devices.

Disposable photonic integrated circuits for evanescent wave sensors by ultra-high volume roll-to-roll method.

PubMed

Aikio, Sanna; Hiltunen, Jussi; Hiitola-Keinänen, Johanna; Hiltunen, Marianne; Kontturi, Ville; Siitonen, Samuli; Puustinen, Jarkko; Karioja, Pentti

2016-02-08

Flexible photonic integrated circuit technology is an emerging field expanding the usage possibilities of photonics, particularly in sensor applications, by enabling the realization of conformable devices and introduction of new alternative production methods. Here, we demonstrate that disposable polymeric photonic integrated circuit devices can be produced in lengths of hundreds of meters by ultra-high volume roll-to-roll methods on a flexible carrier. Attenuation properties of hundreds of individual devices were measured confirming that waveguides with good and repeatable performance were fabricated. We also demonstrate the applicability of the devices for the evanescent wave sensing of ambient refractive index. The production of integrated photonic devices using ultra-high volume fabrication, in a similar manner as paper is produced, may inherently expand methods of manufacturing low-cost disposable photonic integrated circuits for a wide range of sensor applications.

Wire Array Photovoltaics

NASA Astrophysics Data System (ADS)

Turner-Evans, Dan

Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction arrays. These devices offer potential efficiencies of 34%, as demonstrated through an analytical model and optoelectronic simulations. SiGe and Ge wires were fabricated via chemical-vapor deposition and reactive ion etching. GaAs was then grown on these substrates at the National Renewable Energy Lab and yielded ns lifetime components, as required for achieving high efficiency devices.

Planar concentrators near the étendue limit.

PubMed

Winston, Roland; Gordon, Jeffrey M

2005-10-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultracompact planar glass-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multijunction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm2 cell. When deployed in reverse, our designs provide collimation even for high-numerical-aperture light sources.

Planar concentrators near the étendue limit

NASA Astrophysics Data System (ADS)

Winston, Roland; Gordon, Jeffrey M.

2005-10-01

Recently proposed aplanatic imaging designs are integrally combined with nonimaging flux boosters to produce an ultracompact planar glass-filled concentrator that performs near the étendue limit. Such optical devices are attractive for high-efficiency multijunction photovoltaics at high flux, with realistic power generation of 1 W from a 1 mm² cell. When deployed in reverse, our designs provide collimation even for high-numerical-aperture light sources.

Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

DTIC Science & Technology

2015-08-27

photodiodes with different cutoff wavelengths connected in series with tunnel diodes between adjacent photodiodes. The LEDs optically bias the inactive...perfectly conductive n-CdTe/p-InSb tunnel junction. 15. SUBJECT TERMS optical biasing; multi-junction photodetectors; triple-junction solar cell...during this project, including initial demonstrations of optical addressing, tunnel junction studies and multicolor device characterization

Conservative and dissipative force imaging of switchable rotaxanes with frequency-modulation atomic force microscopy

NASA Astrophysics Data System (ADS)

Farrell, Alan A.; Fukuma, Takeshi; Uchihashi, Takayuki; Kay, Euan R.; Bottari, Giovanni; Leigh, David A.; Yamada, Hirofumi; Jarvis, Suzanne P.

2005-09-01

We compare constant amplitude frequency modulation atomic force microscopy (FM-AFM) in ambient conditions to ultrahigh vacuum (UHV) experiments by analysis of thin films of rotaxane molecules. Working in ambient conditions is important for the development of real-world molecular devices. We show that the FM-AFM technique allows quantitative measurement of conservative and dissipative forces without instabilities caused by any native water layer. Molecular resolution is achieved despite the low Q-factor in the air. Furthermore, contrast in the energy dissipation is observed even at the molecular level. This should allow investigations into stimuli-induced sub-molecular motion of organic films.

Stepwise heating in Stille polycondensation toward no batch-to-batch variations in polymer solar cell performance.

PubMed

Lee, Sang Myeon; Park, Kwang Hyun; Jung, Seungon; Park, Hyesung; Yang, Changduk

2018-05-14

For a given π-conjugated polymer, the batch-to-batch variations in molecular weight (M w ) and polydispersity index (Ð) can lead to inconsistent process-dependent material properties and consequent performance variations in the device application. Using a stepwise-heating protocol in the Stille polycondensation in conjunction with optimized processing, we obtained an ultrahigh-quality PTB7 polymer having high M w and very narrow Ð. The resulting ultrahigh-quality polymer-based solar cells demonstrate up to 9.97% power conversion efficiencies (PCEs), which is over 24% enhancement from the control devices fabricated with commercially available PTB7. Moreover, we observe almost negligible batch-to-batch variations in the overall PCE values from ultrahigh-quality polymer-based devices. The proposed stepwise polymerization demonstrates a facile and effective strategy for synthesizing high-quality semiconducting polymers that can significantly improve device yield in polymer-based solar cells, an important factor for the commercialization of organic solar cells, by mitigating device-to-device variations.

Multijunction Solar Cell Development and Production at Spectrolab

NASA Technical Reports Server (NTRS)

Fetzer, Chris; King, R. R.; Law, D. C.; Edmondson, K. M.; Isshiki, T.; Haddad, M.; Zhang, X.; Boisvert, J. C.; Joslin, D. E.; Karam, N. H.

2007-01-01

Development of multijunction space solar cells is much like that for any high technology product. New products face two major pressures from the market: improving performance while maintaining heritage. This duality of purpose is not new and has been represented since ancient times by the Roman god Janus.[1] This deity was typically represented as two faces on a single head: one facing forward and the other to the rear. The image of Janus has been used as symbolism for many combined forces of dual purpose, such as the balance in life between beginnings and endings, or between art and science. For our purposes, Janus represents our design philosophy balance between looking to the future for improvement while simultaneously blending past heritage. In the space photovoltaics industry there are good reasons for both purposes. Looking to the past, a product must have a space flight heritage to gain widespread use. The main reason being that this is an unforgiving business. Spacecraft are expensive to build, launch and operate. Typically once a satellite is launched, in-field service for a power systems problem is near impossible.[2Balanced with this is looking forward. New missions typically require more power than previous programs or attempt new objectives such as a new orbit. And there is always the cost pressure for both the satellite itself as well as the launch costs. Both of which push solar technology to improve power density at a lower cost. The consequence of this balance in a high-risk environment is that space PV develops as a series of infrequent large technology steps or generational changes interspersed with more frequent small technology steps or evolutionary changes. Figure 1 gives a bit of clarification on this point. It depicts the historical progress in space solar cells tracked by efficiency against first launch date for most major products introduced by Spectrolab. The first generation is the Si-based technology reaching a peak values near 15% AM0 (herein denoted for max. power, AM0, 1.353 W/cm2, 28 C). The GaAs single junction device generation supplanted this technology with first flight of GaAs on GaAs substrate in 1982.[3] More recently this generation has been supplanted by the multijunction solar cell GaInP/GaAs/Ge generation. The first launch of a commercial satellite powered by multijunction technology was in 1997 (Hughes HS 601HP) using solar arrays based on Spectrolab s dual junction (DJ) cells. The cells at that time were an impressive 21.5% efficient at beginning-of-life (BOL).[4] Eight years later, the multijunction device has evolved through several versions. The incorporation of an active Ge subcell formed the Triple Junction (TJ) product line at 25.1% efficient, on orbit since November 2001. The evolution of the TJ into the Improved Triple Junction (ITJ) at 26.8% efficient has been on orbit since June of 2002.[5

Understanding/Modelling of Thermal and Radiation Benefits of Quantum Dot Solar Cells

DTIC Science & Technology

2008-07-11

GaAs solar cells have been investigated. Strain compensation is a key step in realizing high- efficiency quantum dots solar cells (QDSC). InAs...factor. A strong correlation between the temperature dependent quantum dot electroluminescence peak emission wavelength and the sub-GaAs bandgap...increased efficiency and radiation resistance devices. The incorporation of quantum dots (QDs) into traditional single or multi-junction crystalline solar

Control of critical coupling in a coiled coaxial cable resonator.

PubMed

Huang, Jie; Wei, Tao; Wang, Tao; Fan, Jun; Xiao, Hai

2014-05-01

This paper reports a coiled coaxial cable resonator fabricated by cutting a slot in a spring-like coiled coaxial cable to produce a periodic perturbation. Electromagnetic coupling between two neighboring slots was observed. By manipulating the number of slots, critical coupling of the coiled coaxial cable resonator can be well controlled. An ultrahigh signal-to-noise ratio (over 50 dB) at the resonant frequency band was experimentally achieved from a coiled coaxial cable resonator with 38 turns. A theoretic model is developed to understand the device physics. The proposed device can be potentially used as a high quality and flexibly designed band-stop filter or a sensor in structural health monitoring.

Whispering gallery resonators for optical sensing

NASA Astrophysics Data System (ADS)

Madugani, Ramgopal; Kasumie, Sho; Yang, Yong; Ward, Jonathan; Lei, Fuchuan; Nic Chormaic, Síle

2017-04-01

In recent years, whispering gallery mode devices have extended their functionality across a number of research fields from photonics to sensing applications. Here, we will discuss environmental sensing applications, such as pressure, flow, and temperature using ultrahigh Q-factor microspheres fabricated from ultrathin optical fiber and microbubbles fabricated from pretapered glass capillary. We will discuss device fabrication and the different types of sensing that can be pursued using such systems. Finally, we will introduce the concept of using cavity ring-up spectroscopy to perform dispersive transient sensing, whereby a perturbation to the environment leads to a frequency mode shift, and dissipative transient sensing, which can lead to broadening of the mode, in a whispering gallery mode resonator.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

NASA Astrophysics Data System (ADS)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the junctions. Our new approach offers greater flexibility and control than previous methods for continuous growth of transition-metal-dichalcogenide-based multi-junction lateral heterostructures. These findings could be extended to other families of two-dimensional materials, and establish a foundation for the development of complex and atomically thin in-plane superlattices, devices and integrated circuits.

Hybrid photovoltaic and thermoelectric module for high concentration solar system

NASA Astrophysics Data System (ADS)

Tamaki, Ryo; Toyoda, Takeshi; Tamura, Yoichi; Matoba, Akinari; Minamikawa, Toshiharu; Tokuda, Masayuki; Masui, Megumi; Okada, Yoshitaka

2017-09-01

A photovoltaic (PV) and thermoelectric (TE) hybrid module was developed for application to high concentration solar systems. The waste heat from the solar cells under concentrated light illumination was utilized to generate additional electricity by assembling TE devices below the multi-junction solar cells (MJSCs). Considering the high operating temperature of the PV and TE hybrid module compared with conventional concentrator PV modules, the TE device could compensate a part of the MJSC efficiency degradation at high temperature. The performance investigation clarified the feasibility of the hybrid PV and TE module under highly concentrated sunlight illumination.

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells

PubMed Central

Guo, Fei; Li, Ning; Fecher, Frank W.; Gasparini, Nicola; Quiroz, Cesar Omar Ramirez; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V.; Radmilović, Velimir R.; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J.

2015-01-01

The multi-junction concept is the most relevant approach to overcome the Shockley–Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies. PMID:26177808

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

PubMed

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

[Reparative Osteogenesis and Angiogenesis in Low Intensity Electromagnetic Radiation of Ultra-High Frequency].

PubMed

Iryanov, Y M; Kiryanov, N A

2015-01-01

Non-drug correction of reparative bone tissue regeneration in different pathological states - one of the most actual problems of modern medicine. Our aim was to conduct morphological analysis of the influence of electromagnetic radiation of ultra-high frequency and low intensity on reparative osteogenesis and angiogenesis in fracture treatment under transosseous osteosynthesis. A controlled nonrandomized study was carried out. In the experiment conducted on rats we modeled tibial fracture with reposition and fixation of the bone fragments both in control and experimental groups. In the animals of the experimental group the fracture zone was exposed to low intensity electromagnetic radiation of ultra-high frequency. Exposure simulation was performed in the control group. The operated bones were examined using radiography, light and electronic microscopy, X-ray electronic probe microanalysis. It has been established that electromagnetic radiation of ultra-high frequency sessions in fracture treatment stimulate secretory activity and degranulation of mast cells, produce microcirculatory bed vascular permeability increase, endotheliocyte migration phenotype expression, provide endovascular endothelial outgrowth formation, activate reparative osteogenesis and angiogenesis while fracture reparation becomes the one of the primary type. The full periosteal, intermediary and intraosteal bone union was defined in 28 days. Among the therapeutic benefits of electromagnetic radiation of ultra-high frequency in fracture treatment we can detect mast cell secretorv activity stimulation and endovascular anziozenesis activation.

Space Operations

DTIC Science & Technology

2013-05-29

support, products, and services, as required. US Tenth Fleet is the SSE for fleet satellite (FLTSAT) and ultrahigh frequency follow-on ( UFO ). b...direct support of Navy and joint forces. These systems include FLTSAT, UFO , MUOS, and varied payloads (Interim Polar and GBS). 10. Air Force Component...33-50 GHz S S-band, 2-4 GHz SHF super high frequency UFO ultrahigh frequency (UHF) follow-on WGS Wideband Global Satellite Communications System X

Multijunction cells for concentrators: Technology prospects

NASA Technical Reports Server (NTRS)

Ferber, R. R. (Compiler); Costogue, E. N. (Compiler); Shimada, K. (Compiler)

1984-01-01

Development of high-efficiency multijunction solar cells for concentrator applications is a key step in achieving the goals of the U.S. Department of Energy National Photovoltaics Program. This report summarizes findings of an issue study conducted by the Jet Propulsion Laboratory Photovoltaic Analysis and Integration Center, with the assistance of the Solar Energy Research Institute and Sandia National laboratoies, which surveyed multijunction cell research for concentrators undertaken by federal agencies and by private industry. The team evaluated the potentials of research activities sponsored by DOE and by corporate funding to achieve projected high-efficiency goals and developed summary statements regarding industry expectations. Recommendations are made for the direction of future work to address specific unresolved aspects of multijunction cell technology.

Current and lattice matched tandem solar cell

DOEpatents

Olson, Jerry M.

1987-01-01

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.

High-Volume Production of Lightweight Multijunction Solar Cells

NASA Technical Reports Server (NTRS)

Youtsey, Christopher

2015-01-01

MicroLink Devices, Inc., has transitioned its 6-inch epitaxial lift-off (ELO) solar cell fabrication process into a manufacturing platform capable of sustaining large-volume production. This Phase II project improves the ELO process by reducing cycle time and increasing the yield of large-area devices. In addition, all critical device fabrication processes have transitioned to 6-inch production tool sets designed for volume production. An emphasis on automated cassette-to-cassette and batch processes minimizes operator dependence and cell performance variability. MicroLink Devices established a pilot production line capable of at least 1,500 6-inch wafers per month at greater than 80 percent yield. The company also increased the yield and manufacturability of the 6-inch reclaim process, which is crucial to reducing the cost of the cells.

Investigations To Characterize Multi-Junction Solar Cells In The Stratosphere Using Low-Cost Balloon And Communication Technologies

NASA Technical Reports Server (NTRS)

Bowe, Glenroy A.; Wang, Qianghua; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

2005-01-01

The use of current balloon, control and communication technologies to test multi-junction solar sell in the stratosphere to achieve near AMO conditions have been investigated. The design criteria for the technologies are that they be reliable, low cost and readily available. Progress is reported on a program to design, launch, fly and retrieve payloads dedicated to testing multi-junction solar cells.

Study of cavity type antenna structure of large-area 915 MHz ultra-high frequency wave plasma device based on three-dimensional finite difference time-domain analysis

NASA Astrophysics Data System (ADS)

Chang, Xijiang; Kunii, Kazuki; Liang, Rongqing; Nagatsu, Masaaki

2013-11-01

A large-area planar plasma source with a resonant cavity type launcher driven by a 915 MHz ultra-high frequency wave was developed. Theoretical analysis with the three-dimensional finite difference time-domain simulation was carried out to determine the optimized launcher structure by analyzing the resonant transverse magnetic mode in the resonant cavity. Numerical result expects that the resonant electric field distribution inside the cavity dominantly consists of the TM410 mode. The resonant cavity type launcher having 8 holes in an octagonal geometry was designed to fit the resonant transverse magnetic mode. Adjusting 8 hole positions of the launcher to the field pattern of the resonant TM410 mode, we found that the plasma density increased about 40%˜50% from 1.0˜1.1 × 1011 cm-3 to ˜1.5 × 1011 cm-3 at the same incident power of 2.5 kW, compared with the previous results with the launcher having 6 holes in the hexagonal geometry. It is also noted that the electron density changes almost linearly with the incident wave power without any mode jumps.

Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

NASA Astrophysics Data System (ADS)

Maros, Aymeric

III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing was found to be essential to improve Voc but was also found to degrade the material quality of the top layers. Alternatives are discussed to improve this process. Unintentional high background doping was identified as the main factor limiting the device performance. The use of Bi-surfactant mediated growth is proposed for the first time for this material system to reduce this background doping and preliminary results are presented.

In situ scanning tunneling microscope tip treatment device for spin polarization imaging

DOEpatents

Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

2008-04-22

A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

Floating Droplet Array: An Ultrahigh-Throughput Device for Droplet Trapping, Real-time Analysis and Recovery

PubMed Central

Labanieh, Louai; Nguyen, Thi N.; Zhao, Weian; Kang, Dong-Ku

2016-01-01

We describe the design, fabrication and use of a dual-layered microfluidic device for ultrahigh-throughput droplet trapping, analysis, and recovery using droplet buoyancy. To demonstrate the utility of this device for digital quantification of analytes, we quantify the number of droplets, which contain a β-galactosidase-conjugated bead among more than 100,000 immobilized droplets. In addition, we demonstrate that this device can be used for droplet clustering and real-time analysis by clustering several droplets together into microwells and monitoring diffusion of fluorescein, a product of the enzymatic reaction of β-galactosidase and its fluorogenic substrate FDG, between droplets. PMID:27134760

Multi-crystalline II-VI based multijunction solar cells and modules

DOEpatents

Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

2015-06-30

Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Investigation of the Carbon Arc Source as an AM0 Solar Simulator for Use in Characterizing Multi-Junction Solar Cells

NASA Technical Reports Server (NTRS)

Xu, Jianzeng; Woodyward, James R.

2005-01-01

The operation of multi-junction solar cells used for production of space power is critically dependent on the spectral irradiance of the illuminating light source. Unlike single-junction cells where the spectral irradiance of the simulator and computational techniques may be used to optimized cell designs, optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0.

Optimization of an Advanced Multi-Junction Solar-Cell Design for Space Environments (AM0) Using Nearly Orthogonal Latin Hypercubes

DTIC Science & Technology

2017-06-01

AN ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES by Silvio Pueschel June...ADVANCED MULTI-JUNCTION SOLAR -CELL DESIGN FOR SPACE ENVIRONMENTS (AM0) USING NEARLY ORTHOGONAL LATIN HYPERCUBES 5. FUNDING NUMBERS 6. AUTHOR(S) Silvio...multi-junction solar cells with Silvaco Atlas simulation software. It introduces the nearly orthogonal Latin hypercube (NOLH) design of experiments (DoE

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

Advanced Photon Source accelerator ultrahigh vacuum guide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Noonan, J.

1994-03-01

In this document the authors summarize the following: (1) an overview of basic concepts of ultrahigh vacuum needed for the APS project, (2) a description of vacuum design and calculations for major parts of APS, including linac, linac waveguide, low energy undulator test line, positron accumulator ring (PAR), booster synchrotron ring, storage ring, and insertion devices, and (3) cleaning procedures of ultrahigh vacuum (UHV) components presently used at APS.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability.

PubMed

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-09

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (T g ) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C -1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

NASA Astrophysics Data System (ADS)

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C-1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Multi-junction Thin-film Solar Cells on Flexible Substrates for Space Power

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Smith, Mark; Scofield, John H.; Dickman, John E.; Lush, Gregory B.; Morel, Donald L.; Ferekides, Christos; Dhere, Neelkanth G.

2002-01-01

The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.

Current- and lattice-matched tandem solar cell

DOEpatents

Olson, J.M.

1985-10-21

A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga/sub x/In/sub 1-x/P (0.505 equal to or less than x equal to or less than 0.515) top cell semiconductor lattice-matched to a GaAs bottom cell semiconductor at a low resistance heterojunction, preferably a p/sup +//n/sup +/ heterojunction between the cells. The top and bottom cells are both lattice-matched and current-matched for high efficiency solar radiation conversion to electrical energy.

New type of multijunction thermopile IR detector

NASA Astrophysics Data System (ADS)

Sun, Tietun; Guo, Lihui

1996-09-01

A newly designed thin-film thermopile infrared detector, which as an absorption layer and a sensitive area on two sides are fabricated using integrated-circuit technology. The device uses a series-connected thermocouples array whose `hot' junction are supported on a thin Myler film of 1 - 3 micrometers thickness. By a special method of fasting the shadow mask, the thermopile with 48 Bi-Sb couples for 2 X 2 mm(superscript 2) area produces a responsivity of 50 - 70 V/W and relaxation time of about 70 ms.

Frequency-degenerate phase-sensitive optical parametric amplification based on four-wave mixing in graphene–silicon slot waveguide

NASA Astrophysics Data System (ADS)

Li, Zhen; Liu, Hongjun; Huang, Nan; Wang, Zhaolu; Han, Jing

2018-06-01

The phase-sensitive amplification process of a hybrid graphene–silicon (HyGS) slot waveguide with trilayers of graphene is investigated in this paper. Numerical simulation shows that a relatively high extinction ratio (42 dB) is achieved, because of the ultrahigh nonlinear coefficients, with a waveguide length of only 680 µm. In addition, the graphene layer provides the possibility of modulating the phase status and gain of the output signal. This study is expected to be highly beneficial to applications such as integrated optics and graphene-related active optical devices.

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

PubMed Central

Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

2015-01-01

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene. PMID:26601221

Study of cavity type antenna structure of large-area 915 MHz ultra-high frequency wave plasma device based on three-dimensional finite difference time-domain analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Xijiang; Graduate School of Science and Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561; Kunii, Kazuki

2013-11-14

A large-area planar plasma source with a resonant cavity type launcher driven by a 915 MHz ultra-high frequency wave was developed. Theoretical analysis with the three-dimensional finite difference time-domain simulation was carried out to determine the optimized launcher structure by analyzing the resonant transverse magnetic mode in the resonant cavity. Numerical result expects that the resonant electric field distribution inside the cavity dominantly consists of the TM{sub 410} mode. The resonant cavity type launcher having 8 holes in an octagonal geometry was designed to fit the resonant transverse magnetic mode. Adjusting 8 hole positions of the launcher to the fieldmore » pattern of the resonant TM{sub 410} mode, we found that the plasma density increased about 40%∼50% from 1.0∼1.1 × 10{sup 11} cm{sup −3} to ∼1.5 × 10{sup 11} cm{sup −3} at the same incident power of 2.5 kW, compared with the previous results with the launcher having 6 holes in the hexagonal geometry. It is also noted that the electron density changes almost linearly with the incident wave power without any mode jumps.« less

Chemical beam epitaxy for high efficiency photovoltaic devices

NASA Technical Reports Server (NTRS)

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-01-01

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-04-01

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.

Terapascal static pressure generation with ultrahigh yield strength nanodiamond.

PubMed

Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Solopova, Natalia A; Abakumov, Artem; Turner, Stuart; Hanfland, Michael; Bykova, Elena; Bykov, Maxim; Prescher, Clemens; Prakapenka, Vitali B; Petitgirard, Sylvain; Chuvashova, Irina; Gasharova, Biliana; Mathis, Yves-Laurent; Ershov, Petr; Snigireva, Irina; Snigirev, Anatoly

2016-07-01

Studies of materials' properties at high and ultrahigh pressures lead to discoveries of unique physical and chemical phenomena and a deeper understanding of matter. In high-pressure research, an achievable static pressure limit is imposed by the strength of available strong materials and design of high-pressure devices. Using a high-pressure and high-temperature technique, we synthesized optically transparent microballs of bulk nanocrystalline diamond, which were found to have an exceptional yield strength (~460 GPa at a confining pressure of ~70 GPa) due to the unique microstructure of bulk nanocrystalline diamond. We used the nanodiamond balls in a double-stage diamond anvil cell high-pressure device that allowed us to generate static pressures beyond 1 TPa, as demonstrated by synchrotron x-ray diffraction. Outstanding mechanical properties (strain-dependent elasticity, very high hardness, and unprecedented yield strength) make the nanodiamond balls a unique device for ultrahigh static pressure generation. Structurally isotropic, homogeneous, and made of a low-Z material, they are promising in the field of x-ray optical applications.

Terapascal static pressure generation with ultrahigh yield strength nanodiamond

PubMed Central

Dubrovinskaia, Natalia; Dubrovinsky, Leonid; Solopova, Natalia A.; Abakumov, Artem; Turner, Stuart; Hanfland, Michael; Bykova, Elena; Bykov, Maxim; Prescher, Clemens; Prakapenka, Vitali B.; Petitgirard, Sylvain; Chuvashova, Irina; Gasharova, Biliana; Mathis, Yves-Laurent; Ershov, Petr; Snigireva, Irina; Snigirev, Anatoly

2016-01-01

Studies of materials’ properties at high and ultrahigh pressures lead to discoveries of unique physical and chemical phenomena and a deeper understanding of matter. In high-pressure research, an achievable static pressure limit is imposed by the strength of available strong materials and design of high-pressure devices. Using a high-pressure and high-temperature technique, we synthesized optically transparent microballs of bulk nanocrystalline diamond, which were found to have an exceptional yield strength (~460 GPa at a confining pressure of ~70 GPa) due to the unique microstructure of bulk nanocrystalline diamond. We used the nanodiamond balls in a double-stage diamond anvil cell high-pressure device that allowed us to generate static pressures beyond 1 TPa, as demonstrated by synchrotron x-ray diffraction. Outstanding mechanical properties (strain-dependent elasticity, very high hardness, and unprecedented yield strength) make the nanodiamond balls a unique device for ultrahigh static pressure generation. Structurally isotropic, homogeneous, and made of a low-Z material, they are promising in the field of x-ray optical applications. PMID:27453944

Effects of low-intensity ultrahigh frequency electromagnetic radiation on inflammatory processes.

PubMed

Lushnikov, K V; Shumilina, Yu V; Yakushina, V S; Gapeev, A B; Sadovnikov, V B; Chemeris, N K

2004-04-01

Low-intensity ultrahigh frequency electromagnetic radiation (42 GHz, 100 microW/cm(2)) reduces the severity of inflammation and inhibits production of active oxygen forms by inflammatory exudate neutrophils only in mice with inflammatory process. These data suggest that some therapeutic effects of electromagnetic radiation can be explained by its antiinflammatory effect which is realized via modulation of functional activity of neutrophils in the focus of inflammation.

Simulation and fabrication of 0-3 composite PZT films for ultrahigh frequency (100-300 MHz) ultrasonic transducers

NASA Astrophysics Data System (ADS)

Chen, Xiaoyang; Fei, Chunlong; Chen, Zeyu; Chen, Ruimin; Yu, Ping; Chen, Zhongping; Shung, K. Kirk; Zhou, Qifa

2016-03-01

This paper presents simulation, fabrication, and characterization of single-element ultrahigh frequency (100-300-MHz) needle ultrasonic transducers based on 0-3 composite Pb(Zr0.52Ti0.48)O3 (PZT) films prepared by using composite ceramic sol-gel film and sol-infiltration technique. The center frequency of the developed transducer at 300-MHz was the highest frequency of PbTiO3 ceramic-based ultrasonic transducers ever reported. Furthermore, a brief description of the composite model was followed by the development of a new expression for predicting the longitudinal velocity, the clamped dielectric constant, and the complex electromechanical coupling coefficient kt of these films, which is very important in ultrasonic transducer design. Moreover, these parameters are difficult to obtain by measuring the frequency dependence of impedance and phase angle because of the weak signal of the previous 0-3 composite films transducer (>100 MHz). The modeling results show that the Cubes model with a geometric factor n = 0.05 fits well with the measured data. This model will be helpful for developing the 0-3 composite systems for ultrahigh frequency ultrasonic transducer design.

Real Space Imaging of the Microscopic Origins of the Ultrahigh Dielectric Constant in Polycrystalline CaCu 3Ti 4O 12

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalinin, Sergei V; Shin, Junsoo; Veith, Gabriel M

2005-01-01

The origins of an ultrahigh dielectric constant in polycrystalline CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz-1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrastmore » in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior.« less

Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

NASA Astrophysics Data System (ADS)

Oukacha, Hassan

The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of circulator shows how crucial this device is to many industries and the need for smaller, cost effective RF components.

Ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires probed by terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Liu, Hongwei; Lu, Junpeng; Yang, Zongyin; Teng, Jinghua; Ke, Lin; Zhang, Xinhai; Tong, Limin; Sow, Chorng Haur

2016-06-01

Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdSxSe1-x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdSxSe1-x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.

Current-matched high-efficiency, multijunction monolithic solar cells

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1993-01-01

The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0

Progress in amorphous silicon based large-area multijunction modules

NASA Astrophysics Data System (ADS)

Carlson, D. E.; Arya, R. R.; Bennett, M.; Chen, L.-F.; Jansen, K.; Li, Y.-M.; Maley, N.; Morris, J.; Newton, J.; Oswald, R. S.; Rajan, K.; Vezzetti, D.; Willing, F.; Yang, L.

1996-01-01

Solarex, a business unit of Amoco/Enron Solar, is scaling up its a-Si:H/a-SiGe:H tandem device technology for the production of 8 ft2 modules. The current R&D effort is focused on improving the performance, reliability and cost-effectiveness of the tandem junction technology by systematically optimizing the materials and interfaces in small-area single- and tandem junction cells. Average initial conversion efficiencies of 8.8% at 85% yield have been obtained in pilot production runs with 4 ft2 tandem modules.

High-beta spherical tokamak startup in TS-4 merging experiment by use of toroidal field ramp-up

NASA Astrophysics Data System (ADS)

Kaminou, Yasuhiro; , Toru, II; Kato, Joji; Inomoto, Michiaki; Ono, Yasushi; TS Group Team; National InstituteFusion Science Collaboration

2014-10-01

We demonstrated the formation method of an ultrahigh-beta spherical tokamak by use of a field-reversed configuration and a spheromak in TS-4 device (R ~ 0.5 m, A ~ 1.5, Ip ~ 30-100 kA, B ~ 100 mT). This method is composed of the following steps: 1. Two spheromaks are merged together and a high-beta spheromak or FRC is formed by reconnection heating. 2. External toroidal magnetic field is added (current rising time ~50 μs), and spherical tokamak-like configuration is formed. In this way, the ultrahigh-beta ST is formed. The ultrahigh-beta ST formed by FRC has a diamagnetic toroidal field, and it presumed to be in a second-stable state for ballooning stability, and the one formed by spheromak has a weak paramagnetic toroidal magnetic field, while a spheormak has a strong paramagnetic toroidal magnetic field. This diamagnetic current derives from inductive electric field by ramping up the external toroidal magnetic field, and the diamagnetic current sustains high thermal pressure of the ultrahigh-beta spherical tokamak. And the beta of the ultrahigh-beta ST formed by FRC reaches about 50%. To sustain the high-beta state, 0.6 MW neutral beam injection and center solenoid coils are installed to the TS-4 device. In the poster, we report the experimental results of ultrahigh-beta spherical tokamak startup and sustainment by NBI and CS current driving experiment.

Status of Photovoltaic Calibration and Measurement Standards

NASA Technical Reports Server (NTRS)

Baraona, Cosmo; Bailey, Sheila; Curtis, Henry; Brinker, David; Jenkins, Phillip; Scheiman, David

2001-01-01

The 7th International Workshop on Space Solar Cell Calibration and Measurement was held on September 25-27, 2000 in Girdwood, Alaska. Representatives from eight countries discussed international standards for single and multijunction solar cell measurement and calibration methods, round robin intercomparisons, and irradiation test methods for space solar cells. Progress toward adoption of an ISO standard on single junction cells was made. Agreement was reached to begin work on new standards for multijunction cells and irradiation testing. Progress on present single junction round robin measurements was discussed and future multijunction round robins were planned. The next workshop will be held in Germany in October 2001.

Solar cell circuit and method for manufacturing solar cells

NASA Technical Reports Server (NTRS)

Mardesich, Nick (Inventor)

2010-01-01

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

[Application of low-intensity and ultrahigh frequency electromagnetic radiation in modern pediatric practice].

PubMed

Azov, N A; Azova, E A

2009-01-01

The use of an Amfit-0,2/10-01 apparatus generating low-intensity ultrahigh frequency (UHF) electromagnetic radiation improved efficiency of therapy of sick children. This treatment allowed to reduce the frequency of intake of anesthetics in the post-operative period, correct metabolic disorders in children with type 1 diabetes mellitus, reduce severity of diabetic nephropathy and polyneuropathy, prevent formation of fresh foci of lipoid necrobiosis. The results of the study indicate that the use of low-intensity UHF electromagnetic radiation may be recommended for more extensive introduction into practical clinical work of pediatric endocrinologists and surgeons.

[Study on spectral gain characterization of FWM processes with multi-frequency pumps in photonic crystal fiber].

PubMed

Hui, Zhan-Qiang

2011-10-01

Spectral gain induced by four-wave-mixing with multi-frequency pump was investigated by exploiting the data signal and continue lights co-propagation in dispersion flattened high nonlinear photonic crystal fiber (PCF). The effects of wavelength drift of pump lights, polarization state of orthogonal or parallel of pump lights, polarization mismatch of signal light versus orthogonal pump lights, total power of signal and probe light on the spectrum gain were analyzed. The results show that good FWM gain effects with multi-frequency pump can be obtained in 36.4 nm wavelength range when power ratio of pump to probe light is appropriate and with identical polarization. Furthermore, the gain of FWM with multi-frequency pump is very sensitive to polarization fluctuation and the different idle waves obtain different gain with the variation in signal polarization state. Moreover, the impact of pump numbers was investigated. The obtained results would be helpful for further research on ultrahigh-speed all optical signal processing devices exploiting the FWM with multi-frequency pump in PCF for future photonics network.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

PubMed Central

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-01-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100–200 kHz and in the temperature range of 25–300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C−1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature. PMID:27827436

Recent developments in novel freezing and thawing technologies applied to foods.

PubMed

Wu, Xiao-Fei; Zhang, Min; Adhikari, Benu; Sun, Jincai

2017-11-22

This article reviews the recent developments in novel freezing and thawing technologies applied to foods. These novel technologies improve the quality of frozen and thawed foods and are energy efficient. The novel technologies applied to freezing include pulsed electric field pre-treatment, ultra-low temperature, ultra-rapid freezing, ultra-high pressure and ultrasound. The novel technologies applied to thawing include ultra-high pressure, ultrasound, high voltage electrostatic field (HVEF), and radio frequency. Ultra-low temperature and ultra-rapid freezing promote the formation and uniform distribution of small ice crystals throughout frozen foods. Ultra-high pressure and ultrasound assisted freezing are non-thermal methods and shorten the freezing time and improve product quality. Ultra-high pressure and HVEF thawing generate high heat transfer rates and accelerate the thawing process. Ultrasound and radio frequency thawing can facilitate thawing process by volumetrically generating heat within frozen foods. It is anticipated that these novel technologies will be increasingly used in food industries in the future.

Effect of Atmospheric Absorption Bands on the Optimal Design of Multijunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, William E.; Friedman, Daniel J.; Geisz, John F.

Designing terrestrial multijunction (MJ) cells with 5+ junctions is challenging, in part because the presence of atmospheric absorption bands creates a design space with numerous local maxima. Here we introduce a new taxonomical structure which facilitates both numerical convergence and the visualization of the resulting designs.

Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz.

PubMed

Sorokin, B P; Kvashnin, G M; Novoselov, A S; Bormashov, V S; Golovanov, A V; Burkov, S I; Blank, V D

2017-07-01

First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·10 14 Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. Copyright © 2017 Elsevier B.V. All rights reserved.

Dose-current discharge correlation analysis in a Mather type Plasma Focus device for medical applications

NASA Astrophysics Data System (ADS)

Sumini, M.; Mostacci, D.; Tartari, A.; Mazza, A.; Cucchi, G.; Isolan, L.; Buontempo, F.; Zironi, I.; Castellani, G.

2017-11-01

In a Plasma Focus device the plasma collapses into the pinch where it reaches thermonuclear conditions for a few tens of nanoseconds, becoming a multi-radiation source. The nature of the radiation generated depends on the gas filling the chamber and the device working parameters. The self-collimated electron beam generated in the backward direction with respect to the plasma motion is one of the main radiation sources of interest also for medical applications. The electron beam may be guided against a high Z material target to produce an X-ray beam. This technique offers an ultra-high dose rate source of X-rays, able to deliver during the pinch a massive dose (up to 1 Gy per discharge for the PFMA-3 test device), as measured with EBT3 GafchromicⒸfilm tissue equivalent dosimeters. Given the stochastic behavior of the discharge process, a reliable on-line estimate of the dose-delivered is a very challenging task, in some way preventing a systematic application as a potentially interesting therapy device. This work presents an approach to linking the dose registered by the EBT3 GafchromicⒸfilms with the information contained in the signal recorded during the current discharge process. Processing the signal with the Wigner-Ville distribution, a spectrogram was obtained, displaying the information on intensity at various frequency scales, identifying the band of frequencies representative of the pinch events and define some patterns correlated with the dose.

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

NASA Astrophysics Data System (ADS)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Ultrahigh Sensitive and Flexible Magnetoelectronics with Magnetic Nanocomposites: Toward an Additional Perception of Artificial Intelligence.

PubMed

Cai, Shu-Yi; Chang, Cheng-Han; Lin, Hung-I; Huang, Yuan-Fu; Lin, Wei-Ju; Lin, Shih-Yao; Liou, Yi-Rou; Shen, Tien-Lin; Huang, Yen-Hsiang; Tsao, Po-Wei; Tzou, Chen-Yang; Liao, Yu-Ming; Chen, Yang-Fang

2018-05-23

In recent years, flexible magnetoelectronics has attracted a great attention for its intriguing functionalities and potential applications, such as healthcare, memory, soft robots, navigation, and touchless human-machine interaction systems. Here, we provide the first attempt to demonstrate a new type of magneto-piezoresistance device, which possesses an ultrahigh sensitivity with several orders of resistance change under an external magnetic field (100 mT). In our device, Fe-Ni alloy powders are embedded in the silver nanowire-coated micropyramid polydimethylsiloxane films. Our devices can not only serve as an on/off switch but also act as a sensor that can detect different magnetic fields because of its ultrahigh sensitivity, which is very useful for the application in analog signal communication. Moreover, our devices contain several key features, including large-area and easy fabrication processes, fast response time, low working voltage, low power consumption, excellent flexibility, and admirable compatibility onto a freeform surface, which are the critical criteria for the future development of touchless human-machine interaction systems. On the basis of all of these unique characteristics, we have demonstrated a nontouch piano keyboard, instantaneous magnetic field visualization, and autonomous power system, making our new devices be integrable with magnetic field and enable to be implemented into our daily life applications with unfamiliar human senses. Our approach therefore paves a useful route for the development of wearable electronics and intelligent systems.

Microwave signal-processing applications of HTS films

NASA Astrophysics Data System (ADS)

Adam, J. D.; Wagner, G. R.

1990-01-01

The low surface resistance (Rs) of high-temperature superconductors (HTS) will lead to the development of passive microwave devices for application in radar, electronic warfare, and satellite systems with performance significantly better than achieved with normal conductors. In particular, delay line based devices such as phase shifters, convolvers, and correlators will have low lossses and multi-GHz bandwidths. Low-loss filters which presently occupy cubic feet in waveguide will be fabricated in compact microstrip or stripline, and ultra-high Q resonators which currently require liquid helium refrigeration will be operated at around 77 K. Measurement of Rs of HTS is important both for device design and for optimization of the film growth process. Several approaches have been developed which provide data over a wide range of frequency and temperature, including stripline, cacity, and dielectric resonator techniques. HTS films for microwave applications should have at least Rs(HTS(

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2015-06-01

In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

Ultrasensitive NO2 gas sensors using hybrid heterojunctions of multi-walled carbon nanotubes and on-chip grown SnO2 nanowires

NASA Astrophysics Data System (ADS)

Nguyet, Quan Thi Minh; Van Duy, Nguyen; Manh Hung, Chu; Hoa, Nguyen Duc; Van Hieu, Nguyen

2018-04-01

Hybrid heterojunction devices are designed for ultrahigh response to NO2 toxic gas. The devices were constructed by assembling multi-walled carbon nanotubes (MWCNTs) on a microelectrode chip bridged bare Pt-electrode and a Pt-electrode with pre-grown SnO2 nanowires (NWs). All heterojunction devices were realized using different types of MWCNTs, which exhibit ultrahigh response to sub-ppm NO2 gas at 50 °C operated in the reverse bias mode. The response to 1 ppm NO2 gas reaches 11300, which is about 100 times higher than that of a back-to-back heterojunction device fabricated from SnO2 NWs and MWCNTs. In addition, the present device exhibits an ultralow detection limit of about 0.68 ppt. The modulation of trap-assisted tunneling current under reverse bias is the main gas-sensing mechanism. This principle device presents a concept for developing gas sensors made of a hybrid between semiconductor metal oxide NWs and CNTs.

Carbon nanotube chemistry and assembly for electronic devices

NASA Astrophysics Data System (ADS)

Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

2009-05-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

PubMed

Zuo, Chengjie; Van der Spiegel, Jan; Piazza, Gianluca

2010-01-01

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-microm complementary metaloxide- semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that are based on film bulk acoustic resonator (FBAR), surface acoustic wave (SAW), and CMOS on-chip inductor and capacitor (CMOS LC) technologies. A simple 2-mask process was used to fabricate the LFE AlN resonators operating between 843 MHz and 1.64 GHz with simultaneously high Q (up to 2,200) and kt 2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make these devices suitable for post-CMOS integrated on-chip direct gigahertz frequency synthesis in reconfigurable multiband wireless communications.

Field Performance versus Standard Test Condition Efficiency of Tandem Solar Cells and the Singular Case of Perovskites/Silicon Devices.

PubMed

Dupré, Olivier; Niesen, Bjoern; De Wolf, Stefaan; Ballif, Christophe

2018-01-18

Multijunction cells may offer a cost-effective route to boost the efficiency of industrial photovoltaics. For any technology to be deployed in the field, its performance under actual operating conditions is extremely important. In this perspective, we evaluate the impact of spectrum, light intensity, and module temperature variations on the efficiency of tandem devices with crystalline silicon bottom cells with a particular focus on perovskite top cells. We consider devices with different efficiencies and calculate their energy yields using field data from Denver. We find that annual losses due to differences between operating conditions and standard test conditions are similar for single-junction and four-terminal tandem devices. The additional loss for the two-terminal tandem configuration caused by current mismatch reduces its performance ratio by only 1.7% when an optimal top cell bandgap is used. Additionally, the unusual bandgap temperature dependence of perovskites is shown to have a positive, compensating effect on current mismatch.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

14 CFR 1.2 - Abbreviations and symbols.

Code of Federal Regulations, 2010 CFR

2010-01-01

... with runway alignment indicator lights. TACAN means ultra-high frequency tactical air navigational aid... touchdown zone lights. TVOR means very high frequency terminal omnirange station. V Ameans design... safety speed. VFRmeans visual flight rules. VHFmeans very high frequency. VORmeans very high frequency...

Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

NASA Astrophysics Data System (ADS)

Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

2017-04-01

The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Lightweight IMM PV Flexible Blanket Assembly

NASA Technical Reports Server (NTRS)

Spence, Brian

2015-01-01

Deployable Space Systems (DSS) has developed an inverted metamorphic multijunction (IMM) photovoltaic (PV) integrated modular blanket assembly (IMBA) that can be rolled or z-folded. This IMM PV IMBA technology enables a revolutionary flexible PV blanket assembly that provides high specific power, exceptional stowed packaging efficiency, and high-voltage operation capability. DSS's technology also accommodates standard third-generation triple junction (ZTJ) PV device technologies to provide significantly improved performance over the current state of the art. This SBIR project demonstrated prototype, flight-like IMM PV IMBA panel assemblies specifically developed, designed, and optimized for NASA's high-voltage solar array missions.

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

NASA Technical Reports Server (NTRS)

Wolford, David S.; Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies, William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; McNatt, Jeremiah S.

2014-01-01

On-orbit measurements of new photovoltaic (PV) technologies for space power are an essential step in the development and qualification of advanced solar cells. NASA Glenn Research Center will fly and measure several solar cells attached to NASA Goddards Robotic Refueling Mission (RRM), expected to be launched in 2014. Industry and government partners have provided advanced PV devices for evaluation of performance and environmental durability. The experiment is completely self-contained, providing its own power and internal data storage. Several new cell technologies including Inverted Metamorphic Multi-junction and four-junction cells will be tested.

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

PubMed

Simon, John; Zhang, Ze; Goodman, Kevin; Xing, Huili; Kosel, Thomas; Fay, Patrick; Jena, Debdeep

2009-07-10

The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-band-gap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.

Ultra-high thermal effusivity materials for resonant ambient thermal energy harvesting.

PubMed

Cottrill, Anton L; Liu, Albert Tianxiang; Kunai, Yuichiro; Koman, Volodymyr B; Kaplan, Amir; Mahajan, Sayalee G; Liu, Pingwei; Toland, Aubrey R; Strano, Michael S

2018-02-14

Materials science has made progress in maximizing or minimizing the thermal conductivity of materials; however, the thermal effusivity-related to the product of conductivity and capacity-has received limited attention, despite its importance in the coupling of thermal energy to the environment. Herein, we design materials that maximize the thermal effusivity by impregnating copper and nickel foams with conformal, chemical-vapor-deposited graphene and octadecane as a phase change material. These materials are ideal for ambient energy harvesting in the form of what we call thermal resonators to generate persistent electrical power from thermal fluctuations over large ranges of frequencies. Theory and experiment demonstrate that the harvestable power for these devices is proportional to the thermal effusivity of the dominant thermal mass. To illustrate, we measure persistent energy harvesting from diurnal frequencies, extracting as high as 350 mV and 1.3 mW from approximately 10 °C diurnal temperature differences.

Multijunction Solar Cells Optimized for the Mars Surface Solar Spectrum

NASA Technical Reports Server (NTRS)

Edmondson, Kenneth M.; Fetzer, Chris; Karam, Nasser H.; Stella, Paul; Mardesich, Nick; Mueller, Robert

2007-01-01

This paper gives an update on the performance of the Mars Exploration Rovers (MER) which have been continually performing for more than 3 years beyond their original 90-day missions. The paper also gives the latest results on the optimization of a multijunction solar cell that is optimized to give more power on the surface of Mars.

The effect of different module configurations on the radiation tolerance of multijunction solar cells

NASA Technical Reports Server (NTRS)

Gee, James M.; Curtis, Henry B.

1988-01-01

The effect of different module configurations on the performance of multijunction (MJ) solar cells in a radiation environment was investigated. Module configuration refers to the electrical circuit in which the subcells of the multijunction cell are wired. Experimental data for AlCaAs, GaAs, InGaAs, and silicon single-junction concentrator cells subjected to 1 MeV electron irradiation was used to calculate the expected performance of AlGaAs/InGaAs, AlGa/silicon, GaAs/InGaAs, and GaAs/silicon Mj concentrator cells. These calculations included independent, series, and voltage-matched configurations. The module configuration was found to have a significant impact on the radiation tolerance characteristic of the MJ cells.

The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology

NASA Astrophysics Data System (ADS)

Colin, Clément; Jaouad, Abdelatif; Darnon, Maxime; De Lafontaine, Mathieu; Volatier, Maïté; Boucherif, Abderraouf; Arès, Richard; Fafard, Simon; Aimez, Vincent

2017-09-01

In this paper, we investigate the development of a robust handling process for thin (<50 µm) substrates in the framework of the monolithic multi-junction solar cell (MJSC) technology. The process, designed for its versatility, is based on a temporary front side bonding of the cell with a polymeric adhesive and then a permanent back side soldering, allowing classical cell micro-fabrication steps on both sides of the wafer. We have demonstrated that the process does not degrade the performances of monolithic MJSC with Ge substrates thickness reduced from 170 µm to 25 µm. Then, we investigate a perspective unlocked with this work: the study of 3D-interconnect architecture for multi-junction solar cells.

Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Hung, Chao-Yu; Evstropov, Valery; Mintairov, Mikhail; Shvarts, Maxim; Okada, Yoshitaka

2013-12-01

In this paper, we focused on developing an accurate model to describe the luminescent coupling (L-C) effect in multijunction solar cells (MJSC) under light concentration. We present here a transcend current-voltage (I-V) formula combined with a self-consistent simulation algorithm to derive the coupling yield γ dependence on light intensity by including the electrical parameters such as shunt resistance (Rsh) and series resistance (Rs), which were ignored in previous simulation models. The effects of both Rsh and Rs on γ were revealed, and the dependence of γ on the external voltage bias Vbias was investigated. Meanwhile, we have performed experiments to determine coupling yield γ by measuring the I-V curves of individual subcell of InGaP/GaAs/Ge triple junction solar cell under varied light intensity. We found that the measured results are only in good agreement with the simulated data obtained from the model where the resistance parameters were included. Based on these results, we calculated the conversion efficiency of MJSC and found that the efficiency increase due to L-C effect is 0.31% under 1 sun and 1.07% under 1000 suns. Thus the L-C analysis results presented here will work as an additional device optimization criteria for MJSC toward higher efficiency.

[Using dynamic magnetotherapy and transdermal electroneurostimulation in the combined treatment of patients with mandibular fractures and concomitant periodontal inflammatory diseases].

PubMed

Lepilin, A V; Erokina, N L; Rogatina, T V; Khlusov, I Iu

2009-01-01

The objective of this study was to compare results of dynamic magnetotherapy (DMT), transdermal electroneurostimulation (TDENS), and traditional ultrahigh frequency (UHF) therapy in 473 patients with mandibular fractures and concomitant inflammatory diseases of paradontium. The parameters measured in the study included hygienic and paradontal indices, microcirculation patterns (using laser Doppler flowmetry), and the degree of mandibular fragment consolidation. It was shown that combined treatment with DMT and TDENS using an AMO-ATOS-E apparatus permits to eliminate clinical symptoms of paradontal inflammatory diseases twice as fast as traditional ultrahigh frequency therapy and ensures a two-fold reduction in the frequency of complications.

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

NASA Astrophysics Data System (ADS)

Thurn-Albrecht, T.; Schotter, J.; Kästle, G. A.; Emley, N.; Shibauchi, T.; Krusin-Elbaum, L.; Guarini, K.; Black, C. T.; Tuominen, M. T.; Russell, T. P.

2000-12-01

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 × 1011 wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

Imaging Atomic-Scale Clustering in III–V Semiconductor Alloys

DOE PAGES

Hirst, Louise C.; Kotulak, Nicole A.; Tomasulo, Stephanie; ...

2017-03-13

Quaternary alloys are essential for the development of high-performance optoelectronic devices. However, immiscibility of the constituent elements can make these materials vulnerable to phase segregation, which degrades the optical and electrical properties of the solid. High-efficiency III–V photovoltaic cells are particularly sensitive to this degradation. InAlAsSb lattice matched to InP is a promising candidate material for high-bandgap subcells of a multijunction photovoltaic device. However, previous studies of this material have identified characteristic signatures of compositional variation, including anomalous low-energy photoluminescence. In this paper, atomic-scale clustering is observed in InAlAsSb via quantitative scanning transmission electron microscopy. Finally, image quantification of atomicmore » column intensity ratios enables the comparison with simulated images, confirming the presence of nonrandom compositional variation in this multispecies alloy.« less

Recent advances in molecular electronics based on carbon nanotubes.

PubMed

Bourgoin, Jean-Philippe; Campidelli, Stéphane; Chenevier, Pascale; Derycke, Vincent; Filoramo, Arianna; Goffman, Marcelo F

2010-01-01

Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties, (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes, and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we outline the main issues concerning the development of carbon nanotubes based electronics applications and review our recent results in the field.

Multijunction high-voltage solar cell

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Goradia, C.; Chai, A. T.

1981-01-01

Multijunction cell allows for fabrication of high-voltage solar cell on single semiconductor wafer. Photovoltaic energy source using cell is combined on wafer with circuit it is to power. Cell consists of many voltage-generating regions internally or externally interconnected to give desired voltage and current combination. For computer applications, module is built on silicon wafer with energy for internal information processing and readouts derived from external light source.

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Cost Trade Between Multi-Junction, Gallium Arsenide, and Silicon Solar Cells

NASA Technical Reports Server (NTRS)

Gaddy, Edward M.

1995-01-01

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar 2 cells and cost approximately five times as much per unit power at the cell level. A trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552,000 dollars per kilogram to launch and suppon3science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. ff the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and supported at a price of approximately $58,000 per kilogram. The trade shows that even if the multi-junction cells are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $180,000 per kilogram. This is still much less than the original $552,000 per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Ultra-high heat flux cooling characteristics of cryogenic micro-solid nitrogen particles and its application to semiconductor wafer cleaning technology

NASA Astrophysics Data System (ADS)

Ishimoto, Jun; Oh, U.; Guanghan, Zhao; Koike, Tomoki; Ochiai, Naoya

2014-01-01

The ultra-high heat flux cooling characteristics and impingement behavior of cryogenic micro-solid nitrogen (SN2) particles in relation to a heated wafer substrate were investigated for application to next generation semiconductor wafer cleaning technology. The fundamental characteristics of cooling heat transfer and photoresist removal-cleaning performance using micro-solid nitrogen particulate spray impinging on a heated substrate were numerically investigated and experimentally measured by a new type of integrated computational-experimental technique. This study contributes not only advanced cryogenic cooling technology for high thermal emission devices, but also to the field of nano device engineering including the semiconductor wafer cleaning technology.

14 CFR 1.2 - Abbreviations and symbols.

Code of Federal Regulations, 2011 CFR

2011-01-01

... alignment indicator lights. TACAN means ultra-high frequency tactical air navigational aid. TAS means true... means technical standard order. TVOR means very high frequency terminal omnirange station. V Ameans... 2minmeans minimum takeoff safety speed. VFRmeans visual flight rules. VHFmeans very high frequency. VORmeans...

14 CFR 1.2 - Abbreviations and symbols.

Code of Federal Regulations, 2014 CFR

2014-01-01

... alignment indicator lights. TACAN means ultra-high frequency tactical air navigational aid. TAS means true... means technical standard order. TVOR means very high frequency terminal omnirange station. V Ameans... 2minmeans minimum takeoff safety speed. VFRmeans visual flight rules. VHFmeans very high frequency. VORmeans...

14 CFR 1.2 - Abbreviations and symbols.

Code of Federal Regulations, 2013 CFR

2013-01-01

... alignment indicator lights. TACAN means ultra-high frequency tactical air navigational aid. TAS means true... means technical standard order. TVOR means very high frequency terminal omnirange station. V Ameans... 2minmeans minimum takeoff safety speed. VFRmeans visual flight rules. VHFmeans very high frequency. VORmeans...

14 CFR 1.2 - Abbreviations and symbols.

Code of Federal Regulations, 2012 CFR

2012-01-01

... alignment indicator lights. TACAN means ultra-high frequency tactical air navigational aid. TAS means true... means technical standard order. TVOR means very high frequency terminal omnirange station. V Ameans... 2minmeans minimum takeoff safety speed. VFRmeans visual flight rules. VHFmeans very high frequency. VORmeans...

Performance analysis of high-concentrated multi-junction solar cells in hot climate

NASA Astrophysics Data System (ADS)

Ghoneim, Adel A.; Kandil, Kandil M.; Alzanki, Talal H.; Alenezi, Mohammad R.

2018-03-01

Multi-junction concentrator solar cells are a promising technology as they can fulfill the increasing energy demand with renewable sources. Focusing sunlight upon the aperture of multi-junction photovoltaic (PV) cells can generate much greater power densities than conventional PV cells. So, concentrated PV multi-junction solar cells offer a promising way towards achieving minimum cost per kilowatt-hour. However, these cells have many aspects that must be fixed to be feasible for large-scale energy generation. In this work, a model is developed to analyze the impact of various atmospheric factors on concentrator PV performance. A single-diode equivalent circuit model is developed to examine multi-junction cells performance in hot weather conditions, considering the impacts of both temperature and concentration ratio. The impacts of spectral variations of irradiance on annual performance of various high-concentrated photovoltaic (HCPV) panels are examined, adapting spectra simulations using the SMARTS model. Also, the diode shunt resistance neglected in the existing models is considered in the present model. The present results are efficiently validated against measurements from published data to within 2% accuracy. Present predictions show that the single-diode model considering the shunt resistance gives accurate and reliable results. Also, aerosol optical depth (AOD) and air mass are most important atmospheric parameters having a significant impact on HCPV cell performance. In addition, the electrical efficiency (η) is noticed to increase with concentration to a certain concentration degree after which it decreases. Finally, based on the model predictions, let us conclude that the present model could be adapted properly to examine HCPV cells' performance over a broad range of operating conditions.

High efficiency solar cells for concentrator systems: silicon or multi-junction?

NASA Astrophysics Data System (ADS)

Slade, Alexander; Stone, Kenneth W.; Gordon, Robert; Garboushian, Vahan

2005-08-01

Amonix has become the first company to begin production of high concentration silicon solar cells where volumes are over 10 MW/year. Higher volumes are available due to the method of manufacture; Amonix solely uses semiconductor foundries for solar cell production. In the previous years of system and cell field testing, this method of manufacturing enabled Amonix to maintain a very low overhead while incurring a high cost for the solar cell. However, recent simplifications to the solar cell processing sequence resulted in cost reduction and increased yield. This new process has been tested by producing small qualities in very short time periods, enabling a simulation of high volume production. Results have included over 90% wafer yield, up to 100% die yield and world record performance (η =27.3%). This reduction in silicon solar cell cost has increased the required efficiency for multi-junction concentrator solar cells to be competitive / advantageous. Concentrator systems are emerging as a low-cost, high volume option for solar-generated electricity due to the very high utilization of the solar cell, leading to a much lower $/Watt cost of a photovoltaic system. Parallel to this is the onset of alternative solar cell technologies, such as the very high efficiency multi-junction solar cells developed at NREL over the last two decades. The relatively high cost of these type of solar cells has relegated their use to non-terrestrial applications. However, recent advancements in both multi-junction concentrator cell efficiency and their stability under high flux densities has made their large-scale terrestrial deployment significantly more viable. This paper presents Amonix's experience and testing results of both high-efficiency silicon rear-junction solar cells and multi-junction solar cells made for concentrated light operation.

Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

PubMed

Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

2015-01-01

An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

Wireless, Room Temperature Volatile Organic Compound Sensor Based on Polypyrrole Nanoparticle Immobilized Ultrahigh Frequency Radio Frequency Identification Tag.

PubMed

Jun, Jaemoon; Oh, Jungkyun; Shin, Dong Hoon; Kim, Sung Gun; Lee, Jun Seop; Kim, Wooyoung; Jang, Jyongsik

2016-12-07

Due to rapid advances in technology which have contributed to the development of portable equipment, highly sensitive and selective sensor technology is in demand. In particular, many approaches to the modification of wireless sensor systems have been studied. Wireless systems have many advantages, including unobtrusive installation, high nodal densities, low cost, and potential commercial applications. In this study, we fabricated radio frequency identification (RFID)-based wireless sensor systems using carboxyl group functionalized polypyrrole (C-PPy) nanoparticles (NPs). The C-PPy NPs were synthesized via chemical oxidation copolymerization, and then their electrical and chemical properties were characterized by a variety of methods. The sensor system was composed of an RFID reader antenna and a sensor tag made from a commercially available ultrahigh frequency RFID tag coated with C-PPy NPs. The C-PPy NPs were covalently bonded to the tag to form a passive sensor. This type of sensor can be produced at a very low cost and exhibits ultrahigh sensitivity to ammonia, detecting concentrations as low as 0.1 ppm. These sensors operated wirelessly and maintained their sensing performance as they were deformed by bending and twisting. Due to their flexibility, these sensors may be used in wearable technologies for sensing gases.

TEM verification of the <111>-type 4-arm multi-junction in [001]-Mo single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiung, L

2005-03-14

To investigate and verify the formation of <111>-type 4-arm multi-junction by the dislocation reaction of 1/2[111] [b1] + 1/2[{bar 1}1{bar 1}] [b2] + 1/2[{bar 1}{bar 1}1] [b3] = 1/2[{bar 1}11] [b4], which has recently been discovered through computer simulations conducted by Vasily Bulatov and his colleagues.

Selenium Interlayer for High-Efficiency Multijunction Solar Cell

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2016-01-01

A multi-junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.

Ultrahigh-density nanowire arrays grown in self-assembled diblock copolymer templates.

PubMed

Thurn-Albrecht, T; Schotter, J; Kästle, G A; Emley, N; Shibauchi, T; Krusin-Elbaum, L; Guarini, K; Black, C T; Tuominen, M T; Russell, T P

2000-12-15

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

Mechanical flip-chip for ultra-high electron mobility devices

DOE PAGES

Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; ...

2015-09-22

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. Thismore » approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.« less

A Dual-Stimuli-Responsive Sodium-Bromine Battery with Ultrahigh Energy Density.

PubMed

Wang, Faxing; Yang, Hongliu; Zhang, Jian; Zhang, Panpan; Wang, Gang; Zhuang, Xiaodong; Cuniberti, Gianaurelio; Feng, Xinliang

2018-06-01

Stimuli-responsive energy storage devices have emerged for the fast-growing popularity of intelligent electronics. However, all previously reported stimuli-responsive energy storage devices have rather low energy densities (<250 Wh kg -1 ) and single stimuli-response, which seriously limit their application scopes in intelligent electronics. Herein, a dual-stimuli-responsive sodium-bromine (Na//Br 2 ) battery featuring ultrahigh energy density, electrochromic effect, and fast thermal response is demonstrated. Remarkably, the fabricated Na//Br 2 battery exhibits a large operating voltage of 3.3 V and an energy density up to 760 Wh kg -1 , which outperforms those for the state-of-the-art stimuli-responsive electrochemical energy storage devices. This work offers a promising approach for designing multi-stimuli-responsive and high-energy rechargeable batteries without sacrificing the electrochemical performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

PubMed Central

Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

2012-01-01

One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

Ultrahigh Thermal Conductive yet Superflexible Graphene Films.

PubMed

Peng, Li; Xu, Zhen; Liu, Zheng; Guo, Yan; Li, Peng; Gao, Chao

2017-07-01

Electrical devices generate heat at work. The heat should be transferred away immediately by a thermal manager to keep proper functions, especially for high-frequency apparatuses. Besides high thermal conductivity (K), the thermal manager material requires good foldability for the next generation flexible electronics. Unfortunately, metals have satisfactory ductility but inferior K (≤429 W m -1 K -1 ), and highly thermal-conductive nonmetallic materials are generally brittle. Therefore, fabricating a foldable macroscopic material with a prominent K is still under challenge. This study solves the problem by folding atomic thin graphene into microfolds. The debris-free giant graphene sheets endow graphene film (GF) with a high K of 1940 ± 113 W m -1 K -1 . Simultaneously, the microfolds render GF superflexible with a high fracture elongation up to 16%, enabling it more than 6000 cycles of ultimate folding. The large-area multifunctional GFs can be easily integrated into high-power flexible devices for highly efficient thermal management. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

DOE PAGES

Feng, Wei; Wu, Jing-Bin; Li, Xiaoli; ...

2015-05-20

In this paper, we demonstrate the strategies and principles for the performance improvement of layered semiconductor based photodetectors using multilayer indium selenide (InSe) as the model material. It is discovered that multiple reflection interference at the interfaces in the phototransistor device leads to a thickness-dependent photo-response, which provides a guideline to improve the performance of layered semiconductor based phototransistors. The responsivity and detectivity of InSe nanosheet phototransistor can be adjustable using applied gate voltage. Our InSe nanosheet phototransistor exhibits ultrahigh responsivity and detectivity. An ultrahigh external photo-responsivity of ~10 4 A W -1 can be achieved from broad spectra rangingmore » from UV to near infrared wavelength using our InSe nanosheet photodetectors. The detectivity of multilayer InSe devices is ~10 12 to 10 13 Jones, which surpasses that of the currently exploited InGaAs photodetectors (10 11 to 10 12 Jones). Finally, this research shows that multilayer InSe nanosheets are promising materials for high performance photodetectors.« less

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Calibration of ultra-high frequency (UHF) partial discharge sensors using FDTD method

NASA Astrophysics Data System (ADS)

Ishak, Asnor Mazuan; Ishak, Mohd Taufiq

2018-02-01

Ultra-high frequency (UHF) partial discharge sensors are widely used for conditioning monitoring and defect location in insulation system of high voltage equipment. Designing sensors for specific applications often requires an iterative process of manufacturing, testing and mechanical modifications. This paper demonstrates the use of finite-difference time-domain (FDTD) technique as a tool to predict the frequency response of UHF PD sensors. Using this approach, the design process can be simplified and parametric studies can be conducted in order to assess the influence of component dimensions and material properties on the sensor response. The modelling approach is validated using gigahertz transverse electromagnetic (GTEM) calibration system. The use of a transient excitation source is particularly suitable for modeling using FDTD, which is able to simulate the step response output voltage of the sensor from which the frequency response is obtained using the same post-processing applied to the physical measurement.

Adhesion of Antireflective Coatings in Multijunction Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Miller, David C.; Dauskardt, Reinhold H.

2016-11-21

The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp Heat (85 degrees C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even withmore » germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

Adhesion of Antireflective Coatings in Multijunction Photovoltaics: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Dauskardt, Reinhold H.; Miller, David C.

2016-06-16

The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp Heat (85 degrees C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even withmore » germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

Metamaterial Combining Electric- and Magnetic-Dipole-Based Configurations for Unique Dual-Band Signal Enhancement in Ultrahigh-Field Magnetic Resonance Imaging

PubMed Central

2017-01-01

Magnetic resonance imaging and spectroscopy (MRI and MRS) are both widely used techniques in medical diagnostics and research. One of the major thrusts in recent years has been the introduction of ultrahigh-field magnets in order to boost the sensitivity. Several MRI studies have examined further potential improvements in sensitivity using metamaterials, focusing on single frequency applications. However, metamaterials have yet to reach a level that is practical for routine MRI use. In this work, we explore a new metamaterial implementation for MRI, a dual-nuclei resonant structure, which can be used for both proton and heteronuclear magnetic resonance. Our approach combines two configurations, one based on a set of electric dipoles for the low frequency band, and the second based on a set of magnetic dipoles for the high frequency band. We focus on the implementation of a dual-nuclei metamaterial for phosphorus and proton imaging and spectroscopy at an ultrahigh-field strength of 7 T. In vivo scans using this flexible and compact structure show that it locally enhances both the phosphorus and proton transmit and receive sensitivities. PMID:28901137

Metamaterial Combining Electric- and Magnetic-Dipole-Based Configurations for Unique Dual-Band Signal Enhancement in Ultrahigh-Field Magnetic Resonance Imaging.

PubMed

Schmidt, Rita; Webb, Andrew

2017-10-11

Magnetic resonance imaging and spectroscopy (MRI and MRS) are both widely used techniques in medical diagnostics and research. One of the major thrusts in recent years has been the introduction of ultrahigh-field magnets in order to boost the sensitivity. Several MRI studies have examined further potential improvements in sensitivity using metamaterials, focusing on single frequency applications. However, metamaterials have yet to reach a level that is practical for routine MRI use. In this work, we explore a new metamaterial implementation for MRI, a dual-nuclei resonant structure, which can be used for both proton and heteronuclear magnetic resonance. Our approach combines two configurations, one based on a set of electric dipoles for the low frequency band, and the second based on a set of magnetic dipoles for the high frequency band. We focus on the implementation of a dual-nuclei metamaterial for phosphorus and proton imaging and spectroscopy at an ultrahigh-field strength of 7 T. In vivo scans using this flexible and compact structure show that it locally enhances both the phosphorus and proton transmit and receive sensitivities.

Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system

NASA Astrophysics Data System (ADS)

Kang, Daeshik; Pikhitsa, Peter V.; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-Il; Choi, Mansoo

2014-12-01

Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system.

PubMed

Kang, Daeshik; Pikhitsa, Peter V; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-il; Choi, Mansoo

2014-12-11

Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

The Role of Metal Halide Perovskites in Next-Generation Lighting Devices.

PubMed

Lozano, Gabriel

2018-06-28

The development of smart illumination sources represents a central challenge of the current technology. In this context, the quest for novel materials that enable efficient light generation is essential. Metal halide compounds with perovskite crystalline structure (ABX3) have gained tremendous interest in the last five years since they come as easy-to-prepare high performance semiconductors. Perovskite absorbers are driving the power-conversion-efficiencies of thin film photovoltaics to unprecedented values. Nowadays, mixed-cation mixed-halide lead perovskite solar cells reach efficiencies consistently over 20% and promise to get close to 30% in multi-junction devices when combined with silicon cells at no surcharge. Nonetheless, perovskites' fame extends further since extensive research on these novel semiconductors has also revealed their brightest side. Soon after their irruption in the photovoltaic scenario, demonstration of efficient color tunable -with high color purity- perovskite emitters has opened new avenues for light generation applications that are timely to discuss herein.

Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

DOE PAGES

Greenaway, Ann L.; Boucher, Jason W.; Oener, Sebastian Z.; ...

2017-08-31

III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. Here, we consider recent advances in each technique, including the available materials space, before providing an in-depth comparisonmore » of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.« less

P/N In(Al) GaAs multijunction laser power converters

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Parados, Themis; Walker, Gilbert

1994-01-01

Eight In(AI)GaAs PN junctions grown epitaxially on the semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converted (LPC) chip. Advantages of multijunction LCP designs include the need for less circuitry for power reconditioning and the potential for lower I(sup 2)R power loss. As an example, these LPC's have a responsivity of approximately 1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cm short-circuit current at approximately 0.4V open-cicuit voltage. One disadvantage is the large current would lead to a large I(sup 2)R loss which would lower the fill factor so that 40 watts/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approximately 3V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the I(sup 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPC's) were made in two different compositions of the In(x)Al(y)Ga(1-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPC's had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 micron power conversion efficiencies were approximately 22 percent. One key advantage of multijunction LPC's is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Flexible diodes for radio frequency (RF) electronics: a materials perspective

NASA Astrophysics Data System (ADS)

Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

2017-12-01

Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

DTIC Science & Technology

2017-12-04

34High-Concentration III-V Multijunction Solar Cells," 2017, <http://www.nrel.gov/ pv /high-concentration-iii-v-multijunction- solar - cells.html>. O. K...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR ...0242 Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

Multijunction Solar Cell Efficiencies: Effect of Spectral Window, Optical Environment and Radiative Coupling

DTIC Science & Technology

2014-09-04

Multijunction solar cell efficiencies: effect of spectral window, optical environment and radiative coupling† Carissa N. Eisler ,a Ze’ev R. Abrams,b...SC0001293. C. N. Eisler was supported by the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG...Photovoltaic Specialists Conference, Tampa, FL, 2013. 20 E. M. Ellion, World Pat., 8,701,512, 1987 . 21 B. Mitchell, G. Peharz, G. Siefer, M. Peters, T

Stimulus-Responsive Micro-Supercapacitors with Ultrahigh Energy Density and Reversible Electrochromic Window.

PubMed

Zhang, Panpan; Zhu, Feng; Wang, Faxing; Wang, Jinhui; Dong, Renhao; Zhuang, Xiaodong; Schmidt, Oliver G; Feng, Xinliang

2017-02-01

Stimulus-responsive micro-supercapacitors (SR-MSCs) with ultrahigh volumetric energy density and reversible electrochromic effect are successfully fabricated by employing a vanadium pentoxide and electrochemical exfoliated graphene-based hybrid nanopaper and viologen as electrode and stimulus-responsive material, respectively. The fabricated high-performance SR-MSCs offer new opportunities for intuitively observing the working state of energy devices without the aid of extra equipment and techniques. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions.

PubMed

Sharma, Alka; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

2017-12-20

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

DOE Office of Scientific and Technical Information (OSTI.GOV)

Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.

2000-08-25

This report describes results achieved during phase 1 of a three-phase subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scalemore » equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.« less

Quantum-engineered interband cascade photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razeghi, Manijeh; Tournié, Eric; Brown, Gail J.

2013-12-18

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collectedmore » with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.« less

Tribo-mechanical properties of thin boron coatings deposited on polished cobalt alloy surfaces for orthopedic applications

PubMed Central

Klepper, C. C.; Williams, J. M.; Truhan, J.J.; Qu, J.; Riester, L.; Hazelton, R. C.; Moschella, J.J.; Blau, P.J.; Anderson, J.P.; Popoola, O.O.; Keitz, M.D.

2008-01-01

This paper presents experimental evidence that thin (<∼200 nm) boron coatings, deposited with a (vacuum) cathodic arc technique on pre-polished Co-Cr-Mo surfaces, could potentially extend the life of metal-on-polymer orthopedic devices using cast Co-Cr-Mo alloy for the metal component. The primary tribological test used a linear, reciprocating pin-on-disc arrangement, with pins made of ultra-high molecular weight polyethylene. The disks were cast Co-Cr-Mo samples that were metallographically polished and then coated with boron at a substrate bias of 500 V and at about 100 °C. The wear tests were carried out in a saline solution to simulate the biological environment. The improvements were manifested by the absence of a detectable wear track scar on the coated metal component, while significant polymer transfer film was detected on the uncoated (control) samples tested under the same conditions. The polymer transfer track was characterized with both profilometry and Rutherford Backscattering Spectroscopy. Mechanical characterization of the thin films included nano-indentation, as well as additional pin-on-disk tests with a steel ball to demonstrate adhesion, using ultra-high frequency acoustic microscopy to probe for any void occurrence at the coating-substrate interface. PMID:19340285

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guha, S.

This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate withmore » a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.« less

Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin film, concentrator, and multijunction space solar cells: Status and potential

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1991-01-01

Recent, rapid advances in a variety of solar cell technologies offer the potential for significantly enhancing, or enabling entirely new, mission capabilities. Thin film solar cells are of particular interest. A review is provided of the status of those thin film cell technologies of interest for space applications, and the issues to be resolved before mission planners can consider them. A short summary of recent developments in concentrator and multijunction space solar cell and array technology is given.

Enhanced Contacts for Inverted Metamorphic Multi-Junction Solar Cells Using Carbon Nanotube Metal Matrix Composites

DTIC Science & Technology

2018-01-18

to a variety solar energy markets. For instance, micro-cracks have been shown to cause decreased power output in single- and multi-crystalline Si PV ...fingers in silicon wafer solar cells and PV modules," Solar Energy Materials and Solar Cells, vol. 108, pp. 78-81, 1// 2013. [4] T. H. Reijenga and H...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0125 TR-2017-0125 ENHANCED CONTACTS FOR INVERTED METAMORPHIC MULTI-JUNCTION SOLAR CELLS USING CARBON NANOTUBE METAL

Thin film, concentrator and multijunction space solar cells: Status and potential

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1991-01-01

Recent, rapid advances in a variety of solar cell technologies offer the potential for significantly enhancing, or enabling entirely new, mission capabilities. Thin film solar cells are of particular interest in that regard. A review is provided of the status of those thin film cell technologies of interest for space applications, and the issues to be resolved before mission planners can consider them. A short summary is also given of recent developments in concentrator and multijunction space solar cell and array technology.

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Nanosecond laser ablated copper superhydrophobic surface with tunable ultrahigh adhesion and its renewability with low temperature annealing

NASA Astrophysics Data System (ADS)

He, An; Liu, Wenwen; Xue, Wei; Yang, Huan; Cao, Yu

2018-03-01

Recently, metallic superhydrophobic surfaces with ultrahigh adhesion have got plentiful attention on account of their significance in scientific researches and industrial applications like droplet transport, drug delivery and novel microfluidic devices. However, the long lead time and transience hindered its in-depth development and industrial application. In this work, nanosecond laser ablation was carried out to construct grid of micro-grooves on copper surface, whereafter, by applying fast ethanol assisted low-temperature annealing, we obtained surface with superhydrophobicity and ultrahigh adhesion within hours. And the ultrahigh adhesion force was found tunable by varying the groove spacing. Using ultrasonic cleaning as the simulation of natural wear and tear in service, the renewability of superhydrophobicity was also investigated, and the result shows that the contact angle can rehabilitate promptly by the processing of ethanol assisted low-temperature annealing, which gives a promising fast and cheap circuitous strategy to realize the long wish durable metallic superhydrophobic surfaces in practical applications.

Development of a driving method suitable for ultrahigh-speed shooting in a 2M-fps 300k-pixel single-chip color camera

NASA Astrophysics Data System (ADS)

Yonai, J.; Arai, T.; Hayashida, T.; Ohtake, H.; Namiki, J.; Yoshida, T.; Etoh, T. Goji

2012-03-01

We have developed an ultrahigh-speed CCD camera that can capture instantaneous phenomena not visible to the human eye and impossible to capture with a regular video camera. The ultrahigh-speed CCD was specially constructed so that the CCD memory between the photodiode and the vertical transfer path of each pixel can store 144 frames each. For every one-frame shot, the electric charges generated from the photodiodes are transferred in one step to the memory of all the parallel pixels, making ultrahigh-speed shooting possible. Earlier, we experimentally manufactured a 1M-fps ultrahigh-speed camera and tested it for broadcasting applications. Through those tests, we learned that there are cases that require shooting speeds (frame rate) of more than 1M fps; hence we aimed to develop a new ultrahigh-speed camera that will enable much faster shooting speeds than what is currently possible. Since shooting at speeds of more than 200,000 fps results in decreased image quality and abrupt heating of the image sensor and drive circuit board, faster speeds cannot be achieved merely by increasing the drive frequency. We therefore had to improve the image sensor wiring layout and the driving method to develop a new 2M-fps, 300k-pixel ultrahigh-speed single-chip color camera for broadcasting purposes.

Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Hong; Du, Yuchen; Ye, Peide D., E-mail: yep@purdue.edu

2016-05-16

Herein, we report on achieving ultra-high electron density (exceeding 10{sup 14 }cm{sup −2}) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 10{sup 5} at room temperature. An ultra-high electron density exceeding 10{sup 14 }cm{sup −2} accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reductionmore » of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.« less

Electromagnetic Processing as a Way of Increasing Microbiological Safety of Animal Waste

NASA Astrophysics Data System (ADS)

Soboleva, O. M.; Kolosova, M. M.; Filipovich, L. A.; Aksenov, V. A.

2017-05-01

The article shows the possibility of using the electromagnetic field of ultrahigh frequency (EMF UHF) for drying and disinfecting of such animal waste as pig manure and poultry droppings. The studied modes included the following options: processing exposure of 60, 90, 120 sec, the capacity of 60 kW, the frequency of 915 MHz. The method of UHF processing of manure and poultry droppings is environmentally safe and effective in neutralizing the pathogenic microflora, as well as larvae and eggs of worms. The following processing mode of animal waste in the electromagnetic field of ultrahigh frequency was recognized as optimal: exposure of 90 seconds, the capacity of 60 kW, the frequency of 915 MHz. This option leads to the complete destruction of pathogenic and conditionally pathogenic microorganisms, as well as the eggs and larvae of worms. As a result of this processing, a high level of microbiological safety of pig manure and poultry droppings is achieved that allows using them as organic fertilizers. The peculiarities of some species of pathogenic fungi developing on the surface of the wheat grain are shown. Pre-processed animal waste (pig manure and and poultry droppings) were applied in experimental variants. Used organic fertilizers underwent electromagnetic processing of ultra-high frequency. The qualitative composition of the microflora on the surface of the grain depends on the type of animal waste (manure or droppings) and used dose. The safest part of the microflora of grain was marked with the application of the UHF-processed pig manure and poultry droppings in doses of 10 t/ha.

GaAs Photovoltaics on Polycrystalline Ge Substrates

NASA Technical Reports Server (NTRS)

Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

2007-01-01

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

2017-03-01

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

Quantitative adhesion characterization of antireflective coatings in multijunction photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brock, Ryan; Rewari, Raunaq; Novoa, Fernando D.

We discuss the development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method, which enables the quantitative measurement of adhesion on the thin and fragile substrates used in multijunction photovoltaics. In particular, we address the adhesion of several 2- and 3-layer antireflective coating systems on multijunction cells. By varying interface chemistry and morphology through processing, we demonstrate the marked effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 10 J/m2 were measured. Damp heat (85 degrees C/85% RH) was used to invokemore » degradation of interfacial adhesion. We demonstrate that even with germanium substrates that fracture relatively easily, quantitative measurements of adhesion can be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.« less

AlInAsSb for GaSb-based multi-junction solar cells

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2018-02-01

Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of a multi-junction subcell while conserving a single lattice parameter. Among the possible candidates, AlInAsSb could in theory reach the widest range of bandgap energies while being lattice-matched to InP or GaSb. Although these material systems are still emerging photovoltaic segments, they do offer advantages for multi-junction design. GaSbbased structures in particular can make use of highly efficient GaSb/InAs tunnel junctions to connect the subcells. There has been only little information concerning GaSb-lattice matched AlInAsSb in the literature. The alloy's miscibility gap can be circumvented by the use of non-equilibrium techniques. Nevertheless, appropriate growth conditions remain to be found in order to produce a stable alloy. Furthermore, the abnormally low bandgap energies reported for the material need to be confirmed and interpreted with a multi-junction perspective. In this work, we propose a tandem structure made of an AlInAsSb top cell and a GaSb bottom cell. An epitaxy study of the AlInAsSb alloy lattice-matched to GaSb was first performed. The subcells were then grown and processed. The GaSb subcell yielded an efficiency of 5.9% under 1 sun and the tandem cell is under optimization. Preliminary results are presented in this document.

Equipment Loan for Concentrated PV Cavity Converter (PVCC) Research: Cooperative Research and Development Final Report, CRADA Number CRD-08-285

DOE Office of Scientific and Technical Information (OSTI.GOV)

Netter, Judy

2015-07-28

Interest in High Concentration Photovoltaics (HCPV) for terrestrial applications has significantly grown in recent years. A major driver behind this growth trend is the availability of high efficiency multi-junction (MJ) cells that promise reliable operation under high concentrations (500 to 1000 suns). The primary impact of HCPV on the solar electricity cost is the dramatic reduction in cell cost. For terrestrial HCPV systems, operating at concentrations ≥ 500 suns, the expensive MJ cells are marginally affordable. Most recently, triple-junction test cells have achieved a conversion efficiency of over 40% under concentrated sunlight. Photovoltaic Cavity Converter (PVCC) is a multi-bandgap, highmore » concentration PV device developed by United Innovations, Inc., under subcontract to NREL. The lateral- (2- dimensional) structure of PVCC, as opposed to vertical multi-junction (MJ) structure, helps to circumvent most of the developmental challenges MJ technology has yet to overcome. This CRADA will allow the continued development of this technology by United Innovations. This project was funded by the California Energy Commission and is the second phase of a twopart demonstration program. The key advantage of the design was the use of a PVCC as the receiver. PVCCs efficiently process highly concentrated solar radiation into electricity by recycling photons that are reflected from the surface of the cells. Conventional flat, twodimensional receivers cannot recycle photons and the reflected photons are lost to the conversion process.« less

Thermal management approaches of Cu(In x ,Ga1-x )Se2 micro-solar cells

NASA Astrophysics Data System (ADS)

Sancho-Martínez, Diego; Schmid, Martina

2017-11-01

Concentrator photovoltaics (CPV) is a cost-effective method for generating electricity in regions that have a large fraction of direct solar radiation. With the help of lenses, sunlight is concentrated onto miniature, highly efficient multi-junction solar cells with a photovoltaic performance above 40%. To ensure illumination with direct radiation, CPV modules must be installed on trackers to follow the sun’s path. However, the costs of huge concentration optics and the photovoltaic technology used, narrow the market possibilities for CPV technology. Efforts to reduce these costs are being undertaken by the promotion of Cu(In x ,Ga1-x )Se2 solar cells to take over the high cost multi-junction solar cells and implementing more compact devices by minimization of solar cell area. Micrometer-sized absorbers have the potential of low cost, high efficiencies and good thermal dissipation under concentrated illumination. Heat dissipation at low (<10×) to medium (10  ×  to 100×) flux density distributions is the key point of high concentration studies for macro- and micro-sized solar cells (from 1 µm2 to 1 mm2). To study this thermal process and to optimize it, critical parameters must be taken in account: absorber area, substrate area and thickness, structure design, heat transfer mechanism, concentration factor and illumination profile. A close study on them will be carried out to determine the best structure to enhance and reach the highest possible thermal management pointing to an efficiency improvement.

A minimally invasive blood-extraction system: elastic self-recovery actuator integrated with an ultrahigh- aspect-ratio microneedle.

PubMed

Li, Cheng Guo; Lee, Kwang; Lee, Chang Yeol; Dangol, Manita; Jung, Hyungil

2012-08-28

A minimally invasive blood-extraction system is fabricated by the integration of an elastic self-recovery actuator and an ultrahigh-aspect-ratio microneedle. The simple elastic self-recovery actuator converts finger force to elastic energy to provide power for blood extraction and transport without requiring an external source of power. This device has potential utility in the biomedical field within the framework of complete micro-electromechanical systems. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

NASA Astrophysics Data System (ADS)

Liu, Dong; Sun, Huarui; Pomeroy, James W.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

2015-12-01

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

Mapping the Ice Depth of Europa with Ultrahigh Energy Particles

NASA Astrophysics Data System (ADS)

Romero-Wolf, A.; Naudet, C. J.

2012-12-01

There has been recent interest in applying radio emission of ultra-high energy neutrinos interacting in the ice of Europa. The idea was first described by Gorham (2004)[1] in the context of ultra-high energy particle detection. Shoji, Kurita, and Tanaka (2011)[2] proposed a technique for measuring ice depth using the radio intensity distribution of radio impulses emitted by interactions deep in the Europan ice. Miller, Schaefer, and Sequeira (2012)[3] follow up this study with a simulation of a radio detector mission to constrain the ice depth of Europa. The radio signal results from an effect proposed by Askar'yan (1962)[4] where the particle shower induced by the neutrino interaction accumulates a charge excess traveling faster than the speed of light in the medium and produces a coherent Cherenkov pulse at radio frequencies. We evaluate the feasibility of such a mission given the current state of knowledge of ultra-high energy particle detection and radio pulse production. References [1] Gorham (2004), Planet-sized Detectors for Ultra-high Energy Neutrinos & Cosmic Rays, NASA Advanced Planning Office's Capability Roadmap Public Workshop, Nov. 30, 2004, astro-ph/0411510 [2] Shoji, Kurita, and Tanaka (2011), Constraint of Europan ice thickness by measuring electromagnetic emissions induced by neutrino interaction, Geophysical Research Letters, 38, L08202 [3] Miller, Shaefer, Sequeira, PRIDE (Passive Radio [frequency] Ice Depth Experiment): An instrument to passively measure ice depth from a Europan orbiter using neutrinos, Icarus 220 877-888 [4] Askar'yan (1962), Excess negative charge of an electron photon shower and its coherent radiation originating from it. Radio recording of showers under the ground and on the Moon, Sov. Phys. JETP, 14, 441-443.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Ultrahigh frequency tunability of aperture-coupled microstrip antenna via electric-field tunable BST

NASA Astrophysics Data System (ADS)

Du, Hong-Lei; Xue, Qian; Gao, Xiao-Yang; Yao, Feng-Rui; Lu, Shi-Yang; Wang, Ye-Long; Liu, Chun-Heng; Zhang, Yong-Cheng; Lü, Yue-Guang; Li, Shan-Dong

2015-12-01

A composite ceramic with nominal composition of 45.0 wt%(Ba0.5Sr0.5)TiO3-55.0 wt%MgO (acronym is BST-MgO) is sintered for fabricating a frequency reconfigurable aperture-coupled microstrip antenna. The calcined BST-MgO composite ceramic exhibits good microwave dielectric properties at X-band with appropriate dielectric constant ɛr around 85, lower dielectric loss tan δ about 0.01, and higher permittivity tunability 14.8% at 8.33 kV/cm. An ultrahigh E-field tunability of working frequency up to 11.0% (i.e., from 9.1 GHz to 10.1 GHz with a large frequency shift of 1000 MHz) at a DC bias field from 0 to 8.33 kV/cm and a considerably large center gain over 7.5 dB are obtained in the designed frequency reconfigurable microstrip antenna. These results demonstrate that BST materials are promising for the frequency reconfigurable antenna. Project supported by the National Natural Science Foundation of China (Grant No. 11074040) and the Key Project of Shandong Provincial Department of Science and Technology, China (Grant No. ZR2012FZ006).

Modeling of defect tolerance of IMM multijunction photovoltaics for space application

NASA Astrophysics Data System (ADS)

Mehrotra, Akhil; Freundlich, Alex

2013-03-01

Reduction of defects by use of thick sophisticated graded metamorphic buffers in inverted metamorphic solar cells has been a requirement to obtain high efficiency devices. With increase in number of metamorphic junctions to obtain higher efficiencies, these graded buffers constitute a significant part of growth time and cost for manufacturer of the solar cells. It's been shown that ultrathin 3 and 4 junction IMM devices perform better in presence of dislocations or/and radiation harsh environment compared to conventional thick IMM devices. Thickness optimization of the device would result in better defect and radiation tolerant behavior of 0.7ev and 1.0ev InGaAs sub-cells which would in turn require thinner buffers with higher efficiencies, hence reducing the total device thickness. It is also shown that for 3 and 4 junc. IMM, with an equivalent 1015 cm-2 1 MeV electron fluence radiation, very high EOL efficiencies can be afforded with substantially higher dislocation densities (<2×107 cm-2) than those commonly perceived as acceptable for IMM devices with remaining power factor as high as 0.85. The irregular radiation degradation behavior in 4-junc IMM is also explained by back photon reflection from gold contacts and reduced by using thickness optimization of 0.7ev and 1.0ev InGaAs sub-cells.

On-Orbit Measurement of Next Generation Space Solar Cell Technology on the International Space Station

NASA Technical Reports Server (NTRS)

Wolford, David S.; Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies, William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; McNatt, Jeremiah S.

2015-01-01

Measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. NASA Glenn Research Center (GRC) is in the process of measuring several solar cells in a supplemental experiment on NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4). Four industry and government partners have provided advanced PV devices for measurement and orbital environment testing. The experiment will be on-orbit for approximately 18 months. It is completely self-contained and will provide its own power and internal data storage. Several new cell technologies including four- junction (4J) Inverted Metamorphic Multijunction (IMM) cells will be evaluated and the results compared to ground-based measurements.

Material challenges for solar cells in the twenty-first century: directions in emerging technologies.

PubMed

Almosni, Samy; Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka; Guillemoles, Jean-François

2018-01-01

Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.

Superstructure high efficiency photovoltaics

NASA Technical Reports Server (NTRS)

Wagner, M.; So, L. C.; Leburton, J. P.

1987-01-01

A novel class of photovoltaic cascade structures is introduced which features multijunction upper subcells. These superstructure high efficiency photovoltaics (SHEP's) exhibit enhanced upper subcell spectral response because of the additional junctions which serve to reduce bulk recombination losses by decreasing the mean collection distance for photogenerated minority carriers. Two possible electrical configurations were studied and compared: a three-terminal scheme that allows both subcells to be operated at their individual maximum power points and a two-terminal configuration with an intercell ohmic contact for series interconnection. The three-terminal devices were found to be superior both in terms of beginning-of-life expectancy and radiation tolerance. Realistic simulations of three-terminal AlGaAs/GaAs SHEP's show that one sun AMO efficiencies in excess of 26 percent are possible.

Tandem luminescent solar concentrators based on engineered quantum dots

NASA Astrophysics Data System (ADS)

Wu, Kaifeng; Li, Hongbo; Klimov, Victor I.

2018-02-01

Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm2) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. The efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm2.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

NASA Astrophysics Data System (ADS)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be appliedmore » to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.« less

Multijunction Solar Cell Technology for Mars Surface Applications

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Mardesich, Nick; Ewell, Richard C.; Mueller, Robert L.; Endicter, Scott; Aiken, Daniel; Edmondson, Kenneth; Fetze, Chris

2006-01-01

Solar cells used for Mars surface applications have been commercial space qualified AM0 optimized devices. Due to the Martian atmosphere, these cells are not optimized for the Mars surface and as a result operate at a reduced efficiency. A multi-year program, MOST (Mars Optimized Solar Cell Technology), managed by JPL and funded by NASA Code S, was initiated in 2004, to develop tools to modify commercial AM0 cells for the Mars surface solar spectrum and to fabricate Mars optimized devices for verification. This effort required defining the surface incident spectrum, developing an appropriate laboratory solar simulator measurement capability, and to develop and test commercial cells modified for the Mars surface spectrum. This paper discusses the program, including results for the initial modified cells. Simulated Mars surface measurements of MER cells and Phoenix Lander cells (2007 launch) are provided to characterize the performance loss for those missions. In addition, the performance of the MER rover solar arrays is updated to reflect their more than two (2) year operation.

Transparent Conductive Adhesives for Tandem Solar Cells Using Polymer-Particle Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, Talysa; Lee, Benjamin G; Schnabel, Manuel

2018-02-14

Transparent conductive adhesives (TCAs) can enable conductivity between two substrates, which is useful for a wide range of electronic devices. Here, we have developed a TCA composed of a polymer-particle blend with ethylene-vinyl acetate as the transparent adhesive and metal-coated flexible poly(methyl methacrylate) microspheres as the conductive particles that can provide conductivity and adhesion regardless of the surface texture. This TCA layer was designed to be nearly transparent, conductive in only the out-of-plane direction, and of practical adhesive strength to hold the substrates together. The series resistance was measured at 0.3 and 0.8 O cm2 for 8 and 0.2% particlemore » coverage, respectively, while remaining over 92% was transparent in both cases. For applications in photovoltaic devices, such as mechanically stacked multijunction III-V/Si cells, a TCA with 1% particle coverage will have less than 0.5% power loss due to the resistance and less than 1% shading loss to the bottom cell.« less

Photo-oxidation-modulated refractive index in Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Yue, Zengji; Chen, Qinjun; Sahu, Amit; Wang, Xiaolin; Gu, Min

2017-12-01

We report on an 800 nm femtosecond laser beam induced giant refractive index modulation and enhancement of near-infrared transparency in topological insulator material Bi2Te3 thin films. An ultrahigh refractive index of up to 5.9 was observed in the Bi2Te3 thin film in near-infrared frequency. The refractive index dramatically decreases by a factor of ~3 by an exposure to the 800 nm femtosecond laser beam. Simultaneously, the transmittance of the Bi2Te3 thin films markedly increases to ~96% in the near-infrared frequency. The Raman spectra provides strong evidences that the observed both refractive index modulation and transparency enhancement result from laser beam induced photooxidation effects in the Bi2Te3 thin films. The Bi2Te3 compound transfers into Bi2O3 and TeO2 under the laser beam illumination. These experimental results pave the way towards the design of various optical devices, such as near-infrared flat lenses, waveguide and holograms, based on topological insulator materials.

An adjustable multi-scale single beam acoustic tweezers based on ultrahigh frequency ultrasonic transducer.

PubMed

Chen, Xiaoyang; Lam, Kwok Ho; Chen, Ruimin; Chen, Zeyu; Yu, Ping; Chen, Zhongping; Shung, K Kirk; Zhou, Qifa

2017-11-01

This paper reports the fabrication, characterization, and microparticle manipulation capability of an adjustable multi-scale single beam acoustic tweezers (SBAT) that is capable of flexibly changing the size of "tweezers" like ordinary metal tweezers with a single-element ultrahigh frequency (UHF) ultrasonic transducer. The measured resonant frequency of the developed transducer at 526 MHz is the highest frequency of piezoelectric single crystal based ultrasonic transducers ever reported. This focused UHF ultrasonic transducer exhibits a wide bandwidth (95.5% at -10 dB) due to high attenuation of high-frequency ultrasound wave, which allows the SBAT effectively excite with a wide range of excitation frequency from 150 to 400 MHz by using the "piezoelectric actuator" model. Through controlling the excitation frequency, the wavelength of ultrasound emitted from the SBAT can be changed to selectively manipulate a single microparticle of different sizes (3-100 μm) by using only one transducer. This concept of flexibly changing "tweezers" size is firstly introduced into the study of SBAT. At the same time, it was found that this incident ultrasound wavelength play an important role in lateral trapping and manipulation for microparticle of different sizes. Biotechnol. Bioeng. 2017;114: 2637-2647. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Hybrid WSe2-In2O3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

PubMed

Guo, Nan; Gong, Fan; Liu, Junku; Jia, Yi; Zhao, Shaofan; Liao, Lei; Su, Meng; Fan, Zhiyong; Chen, Xiaoshuang; Lu, Wei; Xiao, Lin; Hu, Weida

2017-10-04

Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing low-dimensional phototransistors with high responsivity and low dark currents over broad-band spectra still remains a great challenge because of the trade-offs in the potential architectures. In this work, we report a hybrid phototransistor consisting of a single In 2 O 3 nanowire as the channel material and a multilayer WSe 2 nanosheet as the decorating sensitizer for photodetection. Our devices show high responsivities of 7.5 × 10 5 and 3.5 × 10 4 A W -1 and ultrahigh detectivities of 4.17 × 10 17 and 1.95 × 10 16 jones at the wavelengths of 637 and 940 nm, respectively. The superior detectivity of the hybrid architecture arises from the extremely low dark currents and the enhanced photogating effect in the depletion regime by the unique design of energy band alignment of the channel and sensitizer materials. Moreover, the visible to near-infrared absorption properties of the multilayer WSe 2 nanosheet favor a broad-band spectral response for the devices. Our results pave the way for developing ultrahigh-sensitivity photodetectors based on low-dimensional hybrid architectures.

Wideband spectrum analysis of ultra-high frequency radio-wave signals due to advanced one-phonon non-collinear anomalous light scattering.

PubMed

Shcherbakov, Alexandre S; Arellanes, Adan Omar

2017-04-20

We present a principally new acousto-optical cell providing an advanced wideband spectrum analysis of ultra-high frequency radio-wave signals. For the first time, we apply a recently developed approach with the tilt angle to a one-phonon non-collinear anomalous light scattering. In contrast to earlier cases, now one can exploit a regime with the fixed optical wavelength for processing a great number of acoustic frequencies simultaneously in the linear regime. The chosen rutile-crystal combines a moderate acoustic velocity with low acoustic attenuation and allows us wide-band data processing within GHz-frequency acoustic waves. We have created and experimentally tested a 6-cm aperture rutile-made acousto-optical cell providing the central frequency 2.0 GHz, frequency bandwidth ∼0.52  GHz with the frequency resolution about 68.3 kHz, and ∼7620 resolvable spots. A similar cell permits designing an advanced ultra-high-frequency arm within a recently developed multi-band radio-wave acousto-optical spectrometer for astrophysical studies. This spectrometer is intended to operate with a few parallel optical arms for processing the multi-frequency data flows within astrophysical observations. Keeping all the instrument's advantages of the previous schematic arrangement, now one can create the highest-frequency arm using the developed rutile-based acousto-optical cell. It permits optimizing the performances inherent in that arm via regulation of both the central frequency and the frequency bandwidth for spectrum analysis.

Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity.

PubMed

Vu, Quoc An; Lee, Jin Hee; Nguyen, Van Luan; Shin, Yong Seon; Lim, Seong Chu; Lee, Kiyoung; Heo, Jinseong; Park, Seongjun; Kim, Kunnyun; Lee, Young Hee; Yu, Woo Jong

2017-01-11

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for photodetection over a wide range of visible wavelengths. Photodetection is generally realized via a phototransistor, photoconductor, p-n junction photovoltaic device, and thermoelectric device. The photodetectivity, which is a primary parameter in photodetector design, is often limited by either low photoresponsivity or a high dark current in TMDs materials. Here, we demonstrated a highly sensitive photodetector with a MoS 2 /h-BN/graphene heterostructure, by inserting a h-BN insulating layer between graphene electrode and MoS 2 photoabsorber, the dark-carriers were highly suppressed by the large electron barrier (2.7 eV) at the graphene/h-BN junction while the photocarriers were effectively tunneled through small hole barrier (1.2 eV) at the MoS 2 /h-BN junction. With both high photocurrent/dark current ratio (>10 5 ) and high photoresponsivity (180 AW -1 ), ultrahigh photodetectivity of 2.6 × 10 13 Jones was obtained at 7 nm thick h-BN, about 100-1000 times higher than that of previously reported MoS 2 -based devices.

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paquette, B.; DeVita, M.; Turala, A.

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4⋅10{sup 20} cm{sup −3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

NASA Technical Reports Server (NTRS)

Daud, Taher (Inventor); Kachare, Akaram H. (Inventor)

1986-01-01

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Lower hybrid current drive experiments in the HT-6M tokamak

NASA Astrophysics Data System (ADS)

Jiang, Tongwen; Liu, Yuexiu; Guo, Wenkang; Zhang, Xuelei; Luo, Jiarong

1987-07-01

Lower hybrid current drive (LHCD) experiments with a multijunction grill have been performed in the HT-6M tokamak. When the RF power pulse with 15ms risetime is injected into the plasma, the toroidal current amplitude is raised, but the temporal variation of the loop voltage does not have measurable change. The efficiency of current drive is Irf/Prf=0.57kA/kW at bar ne=3 × 1012cm-3 and Bt=8KG. It seems that the multijunction grill has the same efficiency as the ordinary grill on the LHCD experiments.

Superstructures and multijunction cells for high efficiency energy conversion

NASA Technical Reports Server (NTRS)

Wagner, M.; Leburton, J. P.

1985-01-01

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Antireflective coatings for multijunction solar cells under wide-angle ray bundles.

PubMed

Victoria, Marta; Domínguez, César; Antón, Ignacio; Sala, Gabriel

2012-03-26

Two important aspects must be considered when optimizing antireflection coatings (ARCs) for multijunction solar cells to be used in concentrators: the angular light distribution over the cell created by the particular concentration system and the wide spectral bandwidth the solar cell is sensitive to. In this article, a numerical optimization procedure and its results are presented. The potential efficiency enhancement by means of ARC optimization is calculated for several concentrating PV systems. In addition, two methods for ARCs direct characterization are presented. The results of these show that real ARCs slightly underperform theoretical predictions.

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Raible, Daniel E.; Dinca, Dragos; Nayfeh, Taysir H.

2012-01-01

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of similar construction would be able to generate 136 kW of electrical power under similar conditions.

Ultrathin high band gap solar cells with improved efficiencies from the world's oldest photovoltaic material.

PubMed

Todorov, Teodor K; Singh, Saurabh; Bishop, Douglas M; Gunawan, Oki; Lee, Yun Seog; Gershon, Talia S; Brew, Kevin W; Antunez, Priscilla D; Haight, Richard

2017-09-25

Selenium was used in the first solid state solar cell in 1883 and gave early insights into the photoelectric effect that inspired Einstein's Nobel Prize work; however, the latest efficiency milestone of 5.0% was more than 30 years ago. The recent surge of interest towards high-band gap absorbers for tandem applications led us to reconsider this attractive 1.95 eV material. Here, we show completely redesigned selenium devices with improved back and front interfaces optimized through combinatorial studies and demonstrate record open-circuit voltage (V OC ) of 970 mV and efficiency of 6.5% under 1 Sun. In addition, Se devices are air-stable, non-toxic, and extremely simple to fabricate. The absorber layer is only 100 nm thick, and can be processed at 200 ˚C, allowing temperature compatibility with most bottom substrates or sub-cells. We analyze device limitations and find significant potential for further improvement making selenium an attractive high-band-gap absorber for multi-junction device applications.Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve photoconversion efficiencies of 6.5%.

Quantum junction solar cells.

PubMed

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H

2012-09-12

Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO(2)); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics.

Sputtered Metal Oxide Broken Gap Junctions for Tandem Solar Cells

NASA Astrophysics Data System (ADS)

Johnson, Forrest

Broken gap metal oxide junctions have been created for the first time by sputtering using ZnSnO3 for the n-type material and Cu 2O or CuAlO2 for the p-type material. Films were sputtered from either ceramic or metallic targets at room temperature from 10nm to 220nm thick. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIAGS/CIGS solar cell applications. Multiple characterization methods demonstrated consistent ohmic I-V profiles for devices on rough surfaces such as ITO/glass and a CIAGS cell. Devices with total junction specific contact resistance of under 0.001 Ohm-cm2 have been achieved with optical transmission close to 100% using 10nm films. Devices showed excellent stability up to 600°C anneals over 1hr using ZnSnO3 and CuAlO2. These films were also amorphous -a great diffusion barrier during top cell growth at high temperatures. Rapid Thermal Anneal (RTA) demonstrated the ability to shift the band structure of the whole device, allowing for tuning it to align with adjacent solar layers. These results remove a key barrier for mass production of multi-junction thin film solar cells.

Direct wafer bonding of highly conductive GaSb/GaInAs and GaSb/GaInP heterojunctions prepared by argon-beam surface activation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predan, Felix, E-mail: felix.predan@ise.fraunhofer.de; Reinwand, Dirk; Cariou, Romain

The authors present a low-temperature wafer bonding process for the formation of electrically conductive n-GaSb/n-Ga{sub 0.79}In{sub 0.21}As and n-GaSb/n-Ga{sub 0.32}In{sub 0.68}P heterojunctions. The surfaces are deoxidized by sputter-etching with an argon-beam and bonded in ultrahigh vacuum. The sputtering behavior was investigated for each material, revealing a distinct selective sputtering characteristic for Ga{sub 0.32}In{sub 0.68}P. According to these findings, the settings for the bonding process were chosen. The mechanical and electrical properties of the wafer bonds were studied. Fully bonded 2 in. wafer pairs were found for both material combinations exhibiting high bond energies, which are comparable to the binding energiesmore » in the semiconductors. Furthermore, bond resistances below 5 mΩ cm{sup 2} could be reached, which are in the range of the lowest resistances that have been reported for wafer bonded heterojunctions. This speaks, together with the high bond energies, for a high amount of covalent bonds at the interfaces. These promising bond characteristics make the integration of antimonides with arsenides or phosphides by wafer bonding attractive for various optoelectronic applications such as multijunction solar cells.« less

Proceedings of the Fourth Precise Time and Time Interval Planning Meeting

NASA Technical Reports Server (NTRS)

Acrivos, H. N. (Compiler); Wardrip, S. C. (Compiler)

1972-01-01

The proceedings of a conference on Precise Time and Time Interval Planning are presented. The subjects discussed include the following: (1) satellite timing techniques, precision frequency sources, and very long baseline interferometry, (2) frequency stabilities and communications, and (3) very low frequency and ultrahigh frequency propagation and use. Emphasis is placed on the accuracy of time discrimination obtained with time measuring equipment and specific applications of time measurement to military operations and civilian research projects.

Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

PubMed

Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

2017-10-01

Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

Ultra-high-frequency microwave response from flexible transparent Au electromagnetic metamaterial nanopatterned antenna.

PubMed

Liu, Dingxin; Niu, Jiebin; Zhu, Haolin; Zhang, Jianyong

2018-02-09

Flexible transparent materials are a hot spot in current research but also a key technical difficulty in industry. They are playing an increasingly important role in flexible transparent display applications such as organic light-emitting diodes, transparent electrodes, and so on. On the other hand, the present research on nanopatterned antennas is mainly concentrated on the optical frequency but rarely on the microwave (such as 3G, 4G, and 5G) and terahertz frequency band communications, where nanopatterned antennas can have many novel applications. To the authors' knowledge, this is the first paper that presents a method for preparing a flexible transparent Au electromagnetic metamaterial nanopatterned antenna. We study its free-space performance at ultra-high frequency and its application in electronic products such as smartphones, tablets, personal computers, and wearable devices (such as smart watches) which have the function of mobile communication. The experimental results showed that the transparency of the antenna designed and fabricated in this work can be as high as 94%, and its efficiency can reach 74.5%-91.9% of antennas commonly seen at present in academia and industry. By adjusting the capacitive and inductive reactance of the nanopatterned antenna's matching circuit, combined with its measured efficiency and 3D electromagnetic simulation results, we speculate on the mechanism of the Au electromagnetic metamaterial nanopatterned antenna with good performance.

Ultra-high-frequency microwave response from flexible transparent Au electromagnetic metamaterial nanopatterned antenna

NASA Astrophysics Data System (ADS)

Liu, Dingxin; Niu, Jiebin; Zhu, Haolin; Zhang, Jianyong

2018-02-01

Flexible transparent materials are a hot spot in current research but also a key technical difficulty in industry. They are playing an increasingly important role in flexible transparent display applications such as organic light-emitting diodes, transparent electrodes, and so on. On the other hand, the present research on nanopatterned antennas is mainly concentrated on the optical frequency but rarely on the microwave (such as 3G, 4G, and 5G) and terahertz frequency band communications, where nanopatterned antennas can have many novel applications. To the authors’ knowledge, this is the first paper that presents a method for preparing a flexible transparent Au electromagnetic metamaterial nanopatterned antenna. We study its free-space performance at ultra-high frequency and its application in electronic products such as smartphones, tablets, personal computers, and wearable devices (such as smart watches) which have the function of mobile communication. The experimental results showed that the transparency of the antenna designed and fabricated in this work can be as high as 94%, and its efficiency can reach 74.5%-91.9% of antennas commonly seen at present in academia and industry. By adjusting the capacitive and inductive reactance of the nanopatterned antenna’s matching circuit, combined with its measured efficiency and 3D electromagnetic simulation results, we speculate on the mechanism of the Au electromagnetic metamaterial nanopatterned antenna with good performance.

Cryogenics for high-energy particle accelerators: highlights from the first fifty years

NASA Astrophysics Data System (ADS)

Lebrun, Ph

2017-02-01

Applied superconductivity has become a key technology for high-energy particle accelerators, allowing to reach higher beam energy while containing size, capital expenditure and operating costs. Large and powerful cryogenic systems are therefore ancillary to low-temperature superconducting accelerator devices - magnets and high-frequency cavities - distributed over multi-kilometre distances and operating generally close to the normal boiling point of helium, but also above 4.2 K in supercritical and down to below 2 K in superfluid. Additionally, low-temperature operation in accelerators may also be required by considerations of ultra-high vacuum, limited stored energy and beam stability. We discuss the rationale for cryogenics in high-energy particle accelerators, review its development over the past half-century and present its outlook in future large projects, with reference to the main engineering domains of cryostat design and heat loads, cooling schemes, efficient power refrigeration and cryogenic fluid management.

UHF wearable battery free sensor module for activity and falling detection.

PubMed

Nam Trung Dang; Thang Viet Tran; Wan-Young Chung

2016-08-01

Falling is one of the most serious medical and social problems in aging population. Therefore taking care of the elderly by detecting activity and falling for preventing and mitigating the injuries caused by falls needs to be concerned. This study proposes a wearable, wireless, battery free ultra-high frequency (UHF) smart sensor tag module for falling and activity detection. The proposed tag is powered by UHF RF wave from reader and read by a standard UHF Electronic Product Code (EPC) Class-1 Generation-2 reader. The battery free sensor module could improve the wearability of the wireless device. The combination of accelerometer signal and received signal strength indication (RSSI) from a reader in the passive smart sensor tag detect the activity and falling of the elderly very successfully. The fabricated smart sensor tag module has an operating range of up to 2.5m and conducting in real-time activity and falling detection.

In-Fiber Magneto-Optic Devices Based on Ultrahigh Verdet Constant Organic Materials and Holey Fibers

DTIC Science & Technology

2009-02-02

protocols and a noise equivalent magnetic field sensitivity of ~ 100 pT/ VHz has been demonstrated. • Magneto-optic properties of magnetite - PMMA composite...nanoparticle - PMMA nanocomposite. We have used both transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) to...we expect to enhance it in our devices by their proper symmetrization as described above. Passive Poking core ^^ direction Magnetic AA

Magnetic Resonance Imaging at Ultrahigh Fields

PubMed Central

Uğurbil, Kamil

2014-01-01

Since the introduction of 4 T human systems in three academic laboratories circa 1990, rapid progress in imaging and spectroscopy studies in humans at 4 T and animal model systems at 9.4 T have led to the introduction of 7 T and higher magnetic fields for human investigation at about the turn of the century. Work conducted on these platforms has demonstrated the existence of significant advantages in SNR and biological information content at these ultrahigh fields, as well as the presence of numerous challenges. Primary difference from lower fields is the deviation from the near field regime; at the frequencies corresponding to hydrogen resonance conditions at ultrahigh fields, the RF is characterized by attenuated traveling waves in the human body, which leads to image nonuniformities for a given sample-coil configuration because of interferences. These nonuniformities were considered detrimental to the progress of imaging at high field strengths. However, they are advantageous for parallel imaging for signal reception and parallel transmission, two critical technologies that account, to a large extend, for the success of ultrahigh fields. With these technologies, and improvements in instrumentation and imaging methods, ultra-high fields have provided unprecedented gains in imaging of brain function and anatomy, and started to make inroads into investigation of the human torso and extremities. As extensive as they are, these gains still constitute a prelude to what is to come given the increasingly larger effort committed to ultrahigh field research and development of ever better instrumentation and techniques. PMID:24686229

Material challenges for solar cells in the twenty-first century: directions in emerging technologies

PubMed Central

Delamarre, Amaury; Jehl, Zacharie; Suchet, Daniel; Cojocaru, Ludmila; Giteau, Maxime; Behaghel, Benoit; Julian, Anatole; Ibrahim, Camille; Tatry, Léa; Wang, Haibin; Kubo, Takaya; Uchida, Satoshi; Segawa, Hiroshi; Miyashita, Naoya; Tamaki, Ryo; Shoji, Yasushi; Yoshida, Katsuhisa; Ahsan, Nazmul; Watanabe, Kentaro; Inoue, Tomoyuki; Sugiyama, Masakazu; Nakano, Yoshiaki; Hamamura, Tomofumi; Toupance, Thierry; Olivier, Céline; Chambon, Sylvain; Vignau, Laurence; Geffroy, Camille; Cloutet, Eric; Hadziioannou, Georges; Cavassilas, Nicolas; Rale, Pierre; Cattoni, Andrea; Collin, Stéphane; Gibelli, François; Paire, Myriam; Lombez, Laurent; Aureau, Damien; Bouttemy, Muriel; Etcheberry, Arnaud; Okada, Yoshitaka

2018-01-01

Abstract Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan–French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots. PMID:29707072

Analysis of InxGa1-xN/Si p-n heterojunction solar cells and the effects of spontaneous and piezoelectric polarization charges

NASA Astrophysics Data System (ADS)

Zheng, Yangdong; Mihara, Akihiro; Yamamoto, Akio

2013-10-01

The band structures, current-voltage characteristics under solar illumination, and photovoltaic (PV) properties of InxGa1-xN/Si p-n heterojunction solar cells (SCs), as well as the effects of spontaneous and piezoelectric polarization (Psp-PPZ) induced charges are investigated theoretically and numerically. We find that the energy peaks on the conduction and valence bands could exponentially reduce the diffusion currents and photocurrents, thus profoundly affect the PV properties of the SCs. Except for large values, the Psp-PPZ induced interface charges have little influence on the band structures and the PV properties. These results should be useful in analysis and design for multijunction tandem InxGa1-xN/Si SC devices.

Pressure and PL study of dilute-N GaInNAs films for applications in photovoltaics

NASA Astrophysics Data System (ADS)

Lindberg, George; Fukuda, Miwa; Al Khalfioui, M.; Hossain, Khalid; Sellers, Ian; Weinstein, Bernard

2013-03-01

Multi-junction photovoltaic devices employing dilute-N GaInNAs alloys are currently of high interest for efficient solar energy conversion. The negative band-bowing produced by introducing a few percent N into GaInAs provides a convenient way to match the 1eV component of the solar spectrum, providing recombination losses in localized states can be reduced while maintaining favorable carrier extraction. High pressure photoluminescence (PL) experiments exploring the localization of band-edge excitons in dilute-N GaInNAs films grown by plasma assisted MBE will be discussed. The effects of post-growth annealing and hydrogen incorporation on the PL spectra of the films are considered. Research supported by Amethyst Research Inc. through the State of Oklahoma, ONAP program.

[The influence of ultrahigh-frequency electromagnetic radiation and low-intensity laser radiation on the body core temperature and basal metabolism in rats with systemic inflammation].

PubMed

Zhavoronok, I P; Molchanova, A Iu; Ulashik, V S

2012-01-01

The effects of ultrahigh-frequency electromagnetic radiation (UHF EMR) and low-intensity laser irradiation (LILI) on the body and skin temperature, oxygen consumption, production of carbon dioxide and heat release were investigated in the experiments on intact rats and during LPS-induced polyphasic fever. It was found that UHF EMR with the wavelength of 4,9 mm, 5,6 mm or 7,1 mm and LILI with the wavelength of 0.47 microm, 0.67 microm and 0.87 microm caused modulation of basal metabolism and thermal response to systemically administered lipopolysaccharide (LPS). These findings suggest that the most pronounced antipyretic and hypometabolic effects were observed after the treatment with UHF EMR at 7,1 mm and LILI at 470 microm.

New ultra-high resolution dye laser spectrometer utilizing a non-tunable reference resonator

NASA Astrophysics Data System (ADS)

Helmcke, J.; Snyder, J. J.; Morinaga, A.; Mensing, F.; Gläser, M.

1987-06-01

A new dye laser spectrometer utilizing a non-tunable reference resonator is described. The resonator consists of two Zerodur mirrors optically contacted to a Zerodur spacer. Frequency scanning of the laser is provided by acoustooptic modulation. Residual drifts of the resonator frequency — measured on line — are compensated automatically by corresponding corrections of the modulation frequency. The stability during several hours and the resettability of the dye laser frequency are±2.5 kHz and±10 kHz, respectively.

A search for ultrahigh-energy neutrinos and measurement of cosmic ray radio emission with the Antarctic Impulsive Transient Antenna

NASA Astrophysics Data System (ADS)

Hoover, Stephen Lam Douglas

2010-11-01

New astronomical messengers may reveal unexpected aspects of the Universe and have often provided a unique source of fresh physical insights. Neutrinos are a promising new messenger particle, capable of carrying information from otherwise inaccessible sources. The ANtarctic Impulsive Transient Antenna (ANITA) seeks to make the first detection of an ultrahigh-energy (E > 1018 eV) neutrino flux. Such a neutrino flux almost certainly exists, produced in interactions of ultrahigh-energy cosmic rays with photons from the cosmic microwave background. ANITA is a balloon payload which monitors large volumes of the Antarctic ice sheet from an altitude of 38 km. An ultrahigh-energy neutrino which interacts in the ice sheet will produce a particle shower which will coherently radiate Cherenkov radiation in radio wavelengths (<3 GHz). Antennas on the balloon payload can then detect the resulting impulsive radio signal. The full ANITA flew for the first time from 15 December 2006 to 19 January 2007. In this dissertation, I will describe the ground calibration system used to transmit calibration signals to the payload in-flight. I will then describe techniques for analysis of ANITA data and give limits on the ultrahigh-energy neutrino flux implied by the null result of that analysis. Finally, I will demonstrate that ANITA is also sensitive to ultrahigh-energy cosmic rays and show the detection of 16 ultrahigh-energy cosmic-ray events during ANITA's first flight. This constitutes the highest frequency and widest bandwidth radio observations of cosmic-ray emission to date I show the average waveform and spectrum of these events and describe their polarization properties, which are strongly correlated with the geomagnetic field.

Cross-Sectional Transport Imaging in a Multijunction Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haegel, Nancy M.; Ke, Chi-Wen; Taha, Hesham

2015-06-14

Combining highly localized electron-beam excitation at a point with the spatial resolution capability of optical near-field imaging, we have imaged carrier transport in a cross-sectioned multijunction (GaInP/GaInAs/Ge) solar cell. We image energy transport associated with carrier diffusion throughout the full width of the middle (GaInAs) cell and luminescent coupling from point excitation in the top cell GaInP to the middle cell. Supporting cathodoluminescence and near-field photoluminescence measurements demonstrate excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results as well as transport limitations on the spatial resolution of cross-sectional measurements.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

High-energy green supercapacitor driven by ionic liquid electrolytes as an ultra-high stable next-generation energy storage device

NASA Astrophysics Data System (ADS)

Thangavel, Ranjith; Kannan, Aravindaraj G.; Ponraj, Rubha; Thangavel, Vigneysh; Kim, Dong-Won; Lee, Yun-Sung

2018-04-01

Development of supercapacitors with high energy density and long cycle life using sustainable materials for next-generation applications is of paramount importance. The ongoing challenge is to elevate the energy density of supercapacitors on par with batteries, while upholding the power and cyclability. In addition, attaining such superior performance with green and sustainable bio-mass derived compounds is very crucial to address the rising environmental concerns. Herein, we demonstrate the use of watermelon rind, a bio-waste from watermelons, towards high energy, and ultra-stable high temperature green supercapacitors with a high-voltage ionic liquid electrolyte. Supercapacitors assembled with ultra-high surface area, hierarchically porous carbon exhibits a remarkable performance both at room temperature and at high temperature (60 °C) with maximum energy densities of ∼174 Wh kg-1 (25 °C), and 177 Wh kg-1 (60 °C) - based on active mass of both electrodes. Furthermore, an ultra-high specific power of ∼20 kW kg-1 along with an ultra-stable cycling performance with 90% retention over 150,000 cycles has been achieved even at 60 °C, outperforming supercapacitors assembled with other carbon based materials. These results demonstrate the potential to develop high-performing, green energy storage devices using eco-friendly materials for next generation electric vehicles and other advanced energy storage systems.

PNNL Expert Doug McMakin Discusses Millimeter Wave Technology

ScienceCinema

McMakin, Doug

2018-02-13

Electrical Engineer Doug McMakin discusses Millimeter Wave Holographic technology, which uses non-harmful, ultrahigh-frequency radio waves to penetrate clothing to detect and identify concealed objects, as well as obtain accurate body measurements.

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices.

PubMed

Gysin, Urs; Glatzel, Thilo; Schmölzer, Thomas; Schöner, Adolf; Reshanov, Sergey; Bartolf, Holger; Meyer, Ernst

2015-01-01

The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip-sample interface for optically excited measurements such as local surface photo voltage detection. We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

Laboratory instrumentation and techniques for characterizing multi-junction solar cells for space applications

NASA Technical Reports Server (NTRS)

Woodyard, James R.

1995-01-01

Multi-junction solar cells are attractive for space applications because they can be designed to convert a larger fraction of AMO into electrical power at a lower cost than single-junction cells. The performance of multi-junction cells is much more sensitive to the spectral irradiance of the illuminating source than single-junction cells. The design of high efficiency multi-junction cells for space applications requires matching the optoelectronic properties of the junctions to AMO spectral irradiance. Unlike single-junction cells, it is not possible to carry out quantum efficiency measurements using only a monochromatic probe beam and determining the cell short-circuit current assuming linearity of the quantum efficiency. Additionally, current-voltage characteristics can not be calculated from measurements under non-AMO light sources using spectral-correction methods. There are reports in the literature on characterizing the performance of multi junction cells by measuring and convoluting the quantum efficiency of each junction with the spectral irradiance; the technique is of limited value for the characterization of cell performance under AMO power-generating conditions. We report the results of research to develop instrumentation and techniques for characterizing multi junction solar cells for space . An integrated system is described which consists of a standard lamp, spectral radiometer, dual-source solar simulator, and personal computer based current-voltage and quantum efficiency equipment. The spectral radiometer is calibrated regularly using the tungsten-halogen standard lamp which has a calibration based on NIST scales. The solar simulator produces the light bias beam for current-voltage and cell quantum efficiency measurements. The calibrated spectral radiometer is used to 'fit' the spectral irradiance of the dual-source solar simulator to WRL AMO data. The quantum efficiency apparatus includes a monochromatic probe beam for measuring the absolute cell quantum efficiency at various voltage biases, including the voltage bias corresponding to the maximum-power point under AMO light bias. The details of the procedures to 'fit' the spectral irradiance to AMO will be discussed. An assessment of the role of the accuracy of the 'fit' of the spectral irradiance and probe beam intensity on measured cell characteristics will be presented. quantum efficiencies were measured with both spectral light bias and AMO light bias; the measurements show striking differences. Spectral irradiances were convoluted with cell quantum efficiencies to calculate cell currents as function of voltage. The calculated currents compare with measured currents at the 1% level. Measurements on a variety of multi-junction cells will be presented. The dependence of defects in junctions on cell quantum efficiencies measured under light and voltage bias conditions will be presented. Comments will be made on issues related to standards for calibration, and limitations of the instrumentation and techniques. Expeditious development of multi-junction solar cell technology for space presents challenges for cell characterization in the laboratory.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jain, Nikhil; Oshima, Ryuji; France, Ryan

To advance the state-of-the-art in III-V multijunction solar cells towards high concentration efficiencies approaching 50%, development of a high-quality ~1.7 eV second junction solar cell is of key interest for integration in five or more junction devices. Quaternary GalnAsP solar cells grown lattice-matched on GaAs allows bandgap tunability in the range from 1.42 to 1.92 eV and offers an attractive Al-free alternative to conventional AlGaAs solar cells. In this work, we investigate the role of growth temperature towards understanding the optimal growth window for realizing high-quality GalnAsP alloys. We demonstrate bandgap tunability from 1.6 to 1.8 eV in GalnAsP alloysmore » for compositions close to the miscibility gap, while still maintaining lattice-matched condition to GaAs. We perform an in-depth investigation to understand the impact of varying base thickness and doping concentration on the carrier collection and performance of these 1.7 eV GalnAsP solar cells. The photo-response of these cells is found to be very sensitive to p-type zinc dopant incorporation in the base layer. We demonstrate prototype 1.7 eV GalnAsP solar cell designs that leverage enhanced depletion width as an effective method to overcome this issue and boost long-wavelength carrier collection. Short-circuit current density (JSC) measured in field-aided devices were as high as 17.25 m A/cm2. The best GalnAsP solar cell in this study achieved an efficiency of 17.2% with a JSC of 17 m A/cm2 and a fill-factor of 86.4%. The corresponding open-circuit voltage (VOC) 1.7 eV measured on this cell represents the highest Voc reported for a 1.7 eV GalnAsP solar cell. These initial cell results are encouraging and highlight the potential of Al-free GalnAsP solar cells for integration in the next generation of III-V multijunction solar cells.« less

Ultrahigh contrast from a frequency-doubled chirped-pulse-amplification beamline.

PubMed

Hillier, David; Danson, Colin; Duffield, Stuart; Egan, David; Elsmere, Stephen; Girling, Mark; Harvey, Ewan; Hopps, Nicholas; Norman, Michael; Parker, Stefan; Treadwell, Paul; Winter, David; Bett, Thomas

2013-06-20

This paper describes frequency-doubled operation of a high-energy chirped-pulse-amplification beamline. Efficient type-I second-harmonic generation was achieved using a 3 mm thick 320 mm aperture KDP crystal. Shots were fired at a range of energies achieving more than 100 J in a subpicosecond, 527 nm laser pulse with a power contrast of 10(14).

Development of High Frequency Transition-Edge-Sensor Polarimeters for Next Generation Cosmic Microwave Background Experiments and Galactic Foreground Measurements

NASA Astrophysics Data System (ADS)

Walker, Samantha; Sierra, Carlos E.; Austermann, Jason Edward; Beall, James; Becker, Dan; Dober, Bradley; Duff, Shannon; Hilton, Gene; Hubmayr, Johannes; Van Lanen, Jeffrey L.; McMahon, Jeff; Simon, Sara M.; Ullom, Joel; Vissers, Michael R.; NIST Quantum Sensors Group

2018-06-01

Observations of the cosmic microwave background (CMB) provide a powerful tool for probing the earliest moments of the universe and therefore have the potential to transform our understanding of cosmology. In particular, precision measurements of its polarization can reveal the existence of gravitational waves produced during cosmic inflation. However, these observations are complicated by the presence of astrophysical foregrounds, which may be separated by using broad frequency coverage, as the spectral energy distribution between foregrounds and the CMB is distinct. For this purpose, we are developing large-bandwidth, feedhorn-coupled transition-edge-sensor (TES) arrays that couple polarized light from waveguide to superconducting microstrip by use of a symmetric, planar orthomode transducer (OMT). In this work, we describe two types of pixels, an ultra-high frequency (UHF) design, which operates from 195 GHz-315 GHz, and an extended ultra-high frequency (UHF++) design, which operates from 195 GHz-420 GHz, being developed for next generation CMB experiments that will come online in the next decade, such as CCAT-prime and the Simons Observatory. We present the designs, simulation results, fabrication, and preliminary measurements of these prototype pixels.

Ultrahigh Flux Thin Film Boiling Heat Transfer Through Nanoporous Membranes.

PubMed

Wang, Qingyang; Chen, Renkun

2018-05-09

Phase change heat transfer is fundamentally important for thermal energy conversion and management, such as in electronics with power density over 1 kW/cm 2 . The critical heat flux (CHF) of phase change heat transfer, either evaporation or boiling, is limited by vapor flux from the liquid-vapor interface, known as the upper limit of heat flux. This limit could in theory be greater than 1 kW/cm 2 on a planar surface, but its experimental realization has remained elusive. Here, we utilized nanoporous membranes to realize a new "thin film boiling" regime that resulted in an unprecedentedly high CHF of over 1.2 kW/cm 2 on a planar surface, which is within a factor of 4 of the theoretical limit, and can be increased to a higher value if mechanical strength of the membranes can be improved (demonstrated with 1.85 kW/cm 2 CHF in this work). The liquid supply is achieved through a simple nanoporous membrane that supports the liquid film where its thickness automatically decreases as heat flux increases. The thin film configuration reduces the conductive thermal resistance, leads to high frequency bubble departure, and provides separate liquid-vapor pathways, therefore significantly enhances the heat transfer. Our work provides a new nanostructuring approach to achieve ultrahigh heat flux in phase change heat transfer and will benefit both theoretical understanding and application in thermal management of high power devices of boiling heat transfer.

FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

NASA Astrophysics Data System (ADS)

Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

2016-01-01

This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

Ultra-high vacuum compatible induction-heated rod casting furnace

NASA Astrophysics Data System (ADS)

Bauer, A.; Neubauer, A.; Münzer, W.; Regnat, A.; Benka, G.; Meven, M.; Pedersen, B.; Pfleiderer, C.

2016-06-01

We report the design of a radio-frequency induction-heated rod casting furnace that permits the preparation of polycrystalline ingots of intermetallic compounds under ultra-high vacuum compatible conditions. The central part of the system is a bespoke water-cooled Hukin crucible supporting a casting mold. Depending on the choice of the mold, typical rods have a diameter between 6 mm and 10 mm and a length up to 90 mm, suitable for single-crystal growth by means of float-zoning. The setup is all-metal sealed and may be baked out. We find that the resulting ultra-high vacuum represents an important precondition for processing compounds with high vapor pressures under a high-purity argon atmosphere up to 3 bars. Using the rod casting furnace, we succeeded to prepare large high-quality single crystals of two half-Heusler compounds, namely, the itinerant antiferromagnet CuMnSb and the half-metallic ferromagnet NiMnSb.

Ultra-high vacuum compatible induction-heated rod casting furnace.

PubMed

Bauer, A; Neubauer, A; Münzer, W; Regnat, A; Benka, G; Meven, M; Pedersen, B; Pfleiderer, C

2016-06-01

We report the design of a radio-frequency induction-heated rod casting furnace that permits the preparation of polycrystalline ingots of intermetallic compounds under ultra-high vacuum compatible conditions. The central part of the system is a bespoke water-cooled Hukin crucible supporting a casting mold. Depending on the choice of the mold, typical rods have a diameter between 6 mm and 10 mm and a length up to 90 mm, suitable for single-crystal growth by means of float-zoning. The setup is all-metal sealed and may be baked out. We find that the resulting ultra-high vacuum represents an important precondition for processing compounds with high vapor pressures under a high-purity argon atmosphere up to 3 bars. Using the rod casting furnace, we succeeded to prepare large high-quality single crystals of two half-Heusler compounds, namely, the itinerant antiferromagnet CuMnSb and the half-metallic ferromagnet NiMnSb.

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

DOE PAGES

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; ...

2015-10-21

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ~10 15 cm -2 for the 4.8-nm-thick PNSmore » when exposed to 20 p.p.b. NO 2 at 300 K. As a result, our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).« less

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

NASA Astrophysics Data System (ADS)

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C.; Chen, Junhong

2015-10-01

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ~1015 cm-2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

PubMed Central

Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C.; Chen, Junhong

2015-01-01

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ∼1015 cm−2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm). PMID:26486604

Design Strategies for Ultra-high Efficiency Photovoltaics

NASA Astrophysics Data System (ADS)

Warmann, Emily Cathryn

While concentrator photovoltaic cells have shown significant improvements in efficiency in the past ten years, once these cells are integrated into concentrating optics, connected to a power conditioning system and deployed in the field, the overall module efficiency drops to only 34 to 36%. This efficiency is impressive compared to conventional flat plate modules, but it is far short of the theoretical limits for solar energy conversion. Designing a system capable of achieving ultra high efficiency of 50% or greater cannot be achieved by refinement and iteration of current design approaches. This thesis takes a systems approach to designing a photovoltaic system capable of 50% efficient performance using conventional diode-based solar cells. The effort began with an exploration of the limiting efficiency of spectrum splitting ensembles with 2 to 20 sub cells in different electrical configurations. Incorporating realistic non-ideal performance with the computationally simple detailed balance approach resulted in practical limits that are useful to identify specific cell performance requirements. This effort quantified the relative benefit of additional cells and concentration for system efficiency, which will help in designing practical optical systems. Efforts to improve the quality of the solar cells themselves focused on the development of tunable lattice constant epitaxial templates. Initially intended to enable lattice matched multijunction solar cells, these templates would enable increased flexibility in band gap selection for spectrum splitting ensembles and enhanced radiative quality relative to metamorphic growth. The III-V material family is commonly used for multijunction solar cells both for its high radiative quality and for the ease of integrating multiple band gaps into one monolithic growth. The band gap flexibility is limited by the lattice constant of available growth templates. The virtual substrate consists of a thin III-V film with the desired lattice constant. The film is grown strained on an available wafer substrate, but the thickness is below the dislocation nucleation threshold. By removing the film from the growth substrate, allowing the strain to relax elastically, and bonding it to a supportive handle, a template with the desired lattice constant is formed. Experimental efforts towards this structure and initial proof of concept are presented. Cells with high radiative quality present the opportunity to recover a large amount of their radiative losses if they are incorporated in an ensemble that couples emission from one cell to another. This effect is well known, but has been explored previously in the context of sub cells that independently operate at their maximum power point. This analysis explicitly accounts for the system interaction and identifies ways to enhance overall performance by operating some cells in an ensemble at voltages that reduce the power converted in the individual cell. Series connected multijunctions, which by their nature facilitate strong optical coupling between sub-cells, are reoptimized with substantial performance benefit. Photovoltaic efficiency is usually measured relative to a standard incident spectrum to allow comparison between systems. Deployed in the field systems may differ in energy production due to sensitivity to changes in the spectrum. The series connection constraint in particular causes system efficiency to decrease as the incident spectrum deviates from the standard spectral composition. This thesis performs a case study comparing performance of systems over a year at a particular location to identify the energy production penalty caused by series connection relative to independent electrical connection.

Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2015-06-14

AlGaInP solar cells with a bandgap (Eg) of ~2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ~2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltagemore » offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.« less

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

NASA Astrophysics Data System (ADS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-02-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR -Vbias) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR -Vbias for Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR -Vbias measurements. The profile of SR-Vbias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

A high specific power solar array for low to mid-power spacecraft

NASA Technical Reports Server (NTRS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-01-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

A high specific power solar array for low to mid-power spacecraft

NASA Astrophysics Data System (ADS)

Jones, P. Alan; White, Stephen F.; Harvey, T. Jeffery; Smith, Brian S.

1993-05-01

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

Electronic device aspects of neural network memories

NASA Technical Reports Server (NTRS)

Lambe, J.; Moopenn, A.; Thakoor, A. P.

1985-01-01

The basic issues related to the electronic implementation of the neural network model (NNM) for content addressable memories are examined. A brief introduction to the principles of the NNM is followed by an analysis of the information storage of the neural network in the form of a binary connection matrix and the recall capability of such matrix memories based on a hardware simulation study. In addition, materials and device architecture issues involved in the future realization of such networks in VLSI-compatible ultrahigh-density memories are considered. A possible space application of such devices would be in the area of large-scale information storage without mechanical devices.

Development of high impedance measurement system for water leakage detection in implantable neuroprosthetic devices.

PubMed

Yousif, Aziz; Kelly, Shawn K

2016-08-01

There has been a push for a greater number of channels in implantable neuroprosthetic devices; but, that number has largely been limited by current hermetic packaging technology. Microfabricated packaging is becoming reality, but a standard testing system is needed to prepare these devices for clinical trials. Impedance measurements of electrodes built into the packaging layers may give an early warning of device failure and predict device lifetime. Because the impedance magnitudes of such devices can be on the order of gigaohms, a versatile system was designed to accommodate ultra-high impedances and allow future integrated circuit implementation in current neural prosthetic technologies. Here we present the circuitry, control software, and preliminary testing results of our designed system.

Ultrahigh Piezoelectric Properties in Textured (K,Na)NbO3 -Based Lead-Free Ceramics.

PubMed

Li, Peng; Zhai, Jiwei; Shen, Bo; Zhang, Shujun; Li, Xiaolong; Zhu, Fangyuan; Zhang, Xingmin

2018-02-01

High-performance lead-free piezoelectric materials are in great demand for next-generation electronic devices to meet the requirement of environmentally sustainable society. Here, ultrahigh piezoelectric properties with piezoelectric coefficients (d 33 ≈700 pC N -1 , d 33 * ≈980 pm V -1 ) and planar electromechanical coupling factor (k p ≈76%) are achieved in highly textured (K,Na)NbO 3 (KNN)-based ceramics. The excellent piezoelectric properties can be explained by the strong anisotropic feature, optimized engineered domain configuration in the textured ceramics, and facilitated polarization rotation induced by the intermediate phase. In addition, the nanodomain structures with decreased domain wall energy and increased domain wall mobility also contribute to the ultrahigh piezoelectric properties. This work not only demonstrates the tremendous potential of KNN-based ceramics to replace lead-based piezoelectrics but also provides a good strategy to design high-performance piezoelectrics by controlling appropriate phase and crystallographic orientation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Amplifier based broadband pixel for sub-millimeter wave imaging

NASA Astrophysics Data System (ADS)

Sarkozy, Stephen; Drewes, Jonathan; Leong, Kevin M. K. H.; Lai, Richard; Mei, X. B. (Gerry); Yoshida, Wayne; Lange, Michael D.; Lee, Jane; Deal, William R.

2012-09-01

Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter wave systems, sub-millimeter wave systems have been hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report a broadband pixel operating from 300 to 340 GHz, biased off a single 2 V power supply. Over this frequency range, the amplifiers provide > 40 dB gain and <8 dB noise figure, representing the current state-of-art performance capabilities. This pixel is enabled by revolutionary enhancements to indium phosphide (InP) high electron mobility transistor technology, based on a sub-50 nm gate and indium arsenide composite channel with a projected maximum oscillation frequency fmax>1.0 THz. The first sub-millimeter wave-based images using active amplification are demonstrated as part of the Joint Improvised Explosive Device Defeat Organization Longe Range Personnel Imager Program. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brownout problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.

Silicon Integrated Cavity Optomechanical Transducer

NASA Astrophysics Data System (ADS)

Zou, Jie; Miao, Houxun; Michels, Thomas; Liu, Yuxiang; Srinivasan, Kartik; Aksyuk, Vladimir

2013-03-01

Cavity optomechanics enables measurements of mechanical motion at the fundamental limits of precision imposed by quantum mechanics. However, the need to align and couple devices to off-chip optical components hinders development, miniaturization and broader application of ultrahigh sensitivity chip-scale optomechanical transducers. Here we demonstrate a fully integrated and optical fiber pigtailed optomechanical transducer with a high Q silicon micro-disk cavity near-field coupled to a nanoscale cantilever. We detect the motion of the cantilever by measuring the resonant frequency shift of the whispering gallery mode of the micro-disk. The sensitivity near the standard quantum limit can be reached with sub-uW optical power. Our on-chip approach combines compactness and stability with great design flexibility: the geometry of the micro-disk and cantilever can be tailored to optimize the mechanical/optical Q factors and tune the mechanical frequency over two orders of magnitudes. Electrical transduction in addition to optical transduction was also demonstrated and both can be used to effectively cool the cantilever. Moreover, cantilevers with sharp tips overhanging the chip edge were fabricated to potentially allow the mechanical cantilever to be coupled to a wide range of off-chip systems, such as spins, DNA, nanostructures and atoms on clean surfaces.

In vivo oxidation in remelted highly cross-linked retrievals.

PubMed

Currier, B H; Van Citters, D W; Currier, J H; Collier, J P

2010-10-20

Elimination of free radicals to prevent oxidation has played a major role in the development and product differentiation of the latest generation of highly cross-linked ultra-high molecular weight polyethylene bearing materials. In the current study, we (1) examined oxidation in a series of retrieved remelted highly cross-linked ultra-high molecular weight polyethylene bearings from a number of device manufacturers and (2) compared the retrieval results with findings for shelf-stored control specimens. The hypothesis was that radiation-cross-linked remelted ultra-high molecular weight polyethylene would maintain oxidative stability in vivo comparable with the stability during shelf storage and in published laboratory aging tests. Fifty remelted highly cross-linked ultra-high molecular weight polyethylene acetabular liners and nineteen remelted highly cross-linked ultra-high molecular weight polyethylene tibial inserts were received after retrieval from twenty-one surgeons from across the U.S. Thirty-two of the retrievals had been in vivo for two years or more. Each was measured for oxidation with use of Fourier transform infrared spectroscopy. A control series of remelted highly cross-linked ultra-high molecular weight polyethylene acetabular liners from three manufacturers was analyzed with electron paramagnetic resonance spectroscopy to measure free radical content and with Fourier transform infrared spectroscopy to measure oxidation initially and after eight to nine years of shelf storage in air. The never-implanted, shelf-aged controls had no measurable free-radical content initially or after eight to nine years of shelf storage. The never-implanted controls showed no increase in oxidation during shelf storage. Oxidation measurements showed measurable oxidation in 22% of the retrieved remelted highly cross-linked liners and inserts after an average of two years in vivo. Because never-implanted remelted highly cross-linked ultra-high molecular weight polyethylene materials had no measurable free-radical concentration and no increase in oxidation during shelf storage, these materials were expected to be oxidation-resistant in vivo. However, some remelted highly cross-linked ultra-high molecular weight polyethylene retrievals showed measurable oxidation after an average of more than two years in vivo. This apparent departure from widely expected behavior requires continued study of the process of in vivo oxidation of ultra-high molecular weight polyethylene materials.

Perovskite Solar Cells | Photovoltaic Research | NREL

Science.gov Websites

& Devices pages: High-Efficiency Crystalline PV Polycrystalline Thin-Film PV Perovskite and Organic -Defect Hybrid Organic/Inorganic Perovskite Films as PV Absorbers. (FY 2015FY 2016). In collaboration with organic metal halide perovskite (see article). Ultrahigh-Efficiency and Low-Cost Polycrystalline Halide

Low Intensity Low Temperature (LILT) measurements and coefficients on new photovoltaic structures

NASA Technical Reports Server (NTRS)

Schelman, David A.; Jenkins, Philip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter, and the outer planets were powered by radioisotope thermal generators (RTG's). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaic (PV) and thermophotovoltaic (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV and TPV data base for planetary mission planners and cell designers, we have compiled low temperature low intensity (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate dI(sub SC)/dT, dV(sub OC)/dT, dFF/dT, and also as a function of intensity, an accurate prediction of cell performance under the AMO spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GainP/GaAs/Ge, InP, InGaAs/InP, InP/InGaAs/InP, and GainP. Temperatures range as low as -175 C and intensities range from 1 sun to .02 suns.

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Jenkins, Phillip P.; Brinker, David J.; Appelbaum, Joseph

1995-01-01

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

NASA Technical Reports Server (NTRS)

Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

1989-01-01

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

NASA Astrophysics Data System (ADS)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

NASA Glenn Research Center Solar Cell Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Wolford, David S.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies , William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; Mcnatt, Jeremiah S.;

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

PubMed

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

NASA Technical Reports Server (NTRS)

Dinetta, L. C.; Hannon, M. H.; Mcneely, J. B.; Barnett, A. M.

1991-01-01

The AstroPower self-supporting, transparent AlGaAs top solar cell can be stacked upon any well-developed bottom solar cell for improved system performance. This is an approach to improve the performance and scale of space photovoltaic power systems. Mechanically stacked tandem solar cell concentrator systems based on the AlGaAs top concentrator solar cell can provide near term efficiencies of 36 percent (AMO, 100x). Possible tandem stack efficiencies greater than 38 percent (100x, AMO) are feasible with a careful selection of materials. In a three solar cell stack, system efficiencies exceed 41 percent (100x, AMO). These device results demonstrate a practical solution for a state-of-the-art top solar cell for attachment to an existing, well-developed solar cell.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

PubMed Central

Martí, A.; Luque, A.

2015-01-01

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions. PMID:25902374

Ultrahigh sensitivity refractive index sensor of a D-shaped PCF based on surface plasmon resonance.

PubMed

Wu, JunJun; Li, Shuguang; Wang, Xinyu; Shi, Min; Feng, Xinxing; Liu, Yundong

2018-05-20

We propose a D-shaped photonic crystal fiber (PCF) refractive index sensor with ultrahigh sensitivity and a wide detection range. The gold layer is deposited on the polished surface, avoiding filling or coating inside the air holes of the PCF. The influences of the gold layer thickness and the diameter of the larger air holes are investigated. The sensing characteristics of the proposed sensor are analyzed by the finite element method. The maximum sensitivity can reach 31,000  nm/RIU, and the refractive index detection range is from 1.32 to 1.40. Our proposed PCF has excellent sensing characteristics and is competitive in sensing devices.

The INSU and DMN network of ST radars

NASA Technical Reports Server (NTRS)

Petitdidier, M.; Klaus, V.; Baudin, F.; Crochet, M.; Penazzi, G.; Quinty, P.

1986-01-01

Due to their capabilities of measuring wind profiles with good time and height resolution, Stratosphere-Troposphere (ST) are well adapted to carry out atmospheric research. In France, a Very High Frequency (VHF) and an Ultrahigh Frequency (UHF) ST radar are working for research purposes. The INSU (Institut National des Sciences de l'Univers) and the DMN (Direction de la Meteorologie Nationale) networks are discussed.

Passive Active Multi-Junction 3, 7 GHZ launcher for Tore-Supra Long Pulse Experiments. Manufacturing Process and Tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guilhem, D.; Achard, J.; Bertrand, B.

2009-11-26

The design and the fabrication of a new Lower Hybrid (LH) actively cooled antenna based on the passive active concept is a part of the CIMES project (Components for the Injection of Mater and Energy in Steady-state). The major objectives of Tore-Supra program is to achieve 1000 s pulses with this LH launcher, by coupling routinely >3 MW of LH wave at 3.7 GHz to the plasma with a parallel index n{sub ||} = 1.7 {sup {+-}}{sup 0.2}. The launcher is on its way to achieve its validation tests--low power Radio Frequency (RF) measurements, vacuum and hydraulic leak tests--and willmore » be installed and commissioned on plasma during the fall of 2009.« less

Recent progress of Spectrolab high-efficiency space solar cells

NASA Astrophysics Data System (ADS)

Law, Daniel C.; Boisvert, J. C.; Rehder, E. M.; Chiu, P. T.; Mesropian, S.; Woo, R. L.; Liu, X. Q.; Hong, W. D.; Fetzer, C. M.; Singer, S. B.; Bhusari, D. M.; Edmondson, K. M.; Zakaria, A.; Jun, B.; Krut, D. D.; King, R. R.; Sharma, S. K.; Karam, N. H.

2013-09-01

Recent progress in III-V multijunction space solar cell has led to Spectrolab's GaInP/GaAs/Ge triple-junction, XTJ, cells with average 1-sun efficiency of 29% (AM0, 28°C) for cell size ranging from 59 to 72-cm2. High-efficiency inverted metamorphic (IMM) multijunction cells are developed as the next space solar cell architecture. Spectrolab's large-area IMM3J and IMM4J cells have achieved 33% and 34% 1-sun, AM0 efficiencies, respectively. The IMM3J and the IMM4J cells have both demonstrated normalized power retention of 0.86 at 5x1014 e-/cm2 fluence and 0.83 and 0.82 at 1x1015 e-/cm2 fluence post 1-MeV electron radiation, respectively. The IMM cells were further assembled into coverglass-interconnect-cell (CIC) strings and affixed to typical rigid aluminum honeycomb panels for thermal cycling characterization. Preliminary temperature cycling data of two coupons populated with IMM cell strings showed no performance degradation. Spectrolab has also developed semiconductor bonded technology (SBT) where highperformance component subcells were grown on GaAs and InP substrates separately then bonded directly to form the final multijunction cells. Large-area SBT 5-junction cells have achieved a 35.1% efficiency under 1-sun, AM0 condition.

Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C60 heterojunction on poly(vinyl alcohol) gate dielectric.

PubMed

Sun, Lei; Zhang, Jianping; Zhao, Feiyu; Luo, Xiao; Lv, Wenli; li, Yao; Ren, Qiang; Wen, Zhanwei; Peng, Yingquan; Liu, Xingyuan

2015-05-08

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm(-2), an ultrahigh photoresponsivity of 21 A W(-1), and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C60 film grown on PVA dielectric. AFM investigations revealed that the C60 film grown on PVA is much smooth and uniform and the grain size is much larger than that grown on SiO2 dielectric, which together results in four orders of magnitude increase of the field-effect electron mobility of C60 film.

Plasmonic metamaterial for electromagnetically induced transparency analogue and ultra-high figure of merit sensor

PubMed Central

Wu, Dong; Liu, Yumin; Yu, Li; Yu, Zhongyuan; Chen, Lei; Li, Ruifang; Ma, Rui; Liu, Chang; Zhang, Jinqiannan; Ye, Han

2017-01-01

In this work, using finite-difference time-domain method, we propose and numerically demonstrate a novel way to achieve electromagnetically induced transparency (EIT) phenomenon in the reflection spectrum by stacking two different types of coupling effect among different elements of the designed metamaterial. Compared with the conventional EIT-like analogues coming from only one type of coupling effect between bright and dark meta-atoms on the same plane, to our knowledge the novel approach is the first to realize the optically active and precise control of the wavelength position of EIT-like phenomenon using optical metamaterials. An on-to-off dynamic control of the EIT-like phenomenon also can be achieved by changing the refractive index of the dielectric substrate via adjusting an optical pump pulse. Furthermore, in near infrared region, the metamaterial structure can be operated as an ultra-high resolution refractive index sensor with an ultra-high figure of merit (FOM) reaching 3200, which remarkably improve the FOM value of plasmonic refractive index sensors. The novel approach realizing EIT-like spectral shape with easy adjustment to the working wavelengths will open up new avenues for future research and practical application of active plasmonic switch, ultra-high resolution sensors and active slow-light devices. PMID:28332629

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose.

PubMed

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-30

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm(2), a current rectification ratio up to 4 × 10(3) between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

PubMed Central

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-01-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits. PMID:27357006

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

NASA Astrophysics Data System (ADS)

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip

DTIC Science & Technology

2016-10-21

AFRL-AFOSR-JP-TR-2016-0087 Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip Benjamin Eggleton UNIVERSITY OF SYDNEY Final Report 10...REPORT TYPE      Final 3.  DATES COVERED (From - To)      14 May 2014 to 13 May 2016 4.  TITLE AND SUBTITLE Frequency Agile Microwave Photonic Notch Filter ...primary objective is to explore a novel class microwave photonic (MWP) notch filter with a very narrow isolation bandwidth, an ultrahigh stopband

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Ionization monitor with improved ultra-high megohm resistor

DOEpatents

Burgess, Edward T.

1988-11-05

An ionization monitor measures extremely small currents using a resistor containing a beta emitter to generate ion-pairs which are collected as current when the device is used as a feedback resistor in an electrometer circuit. By varying the amount of beta emitter, the resistance of the resistor may be varied.

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

NASA Technical Reports Server (NTRS)

Wilt, David M.; Fitzgerald, Eugene A.; Ringel, Steven A.

2005-01-01

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Nano-RuO2 -Decorated Holey Graphene Composite Fibers for Micro-Supercapacitors with Ultrahigh Energy Density.

PubMed

Zhai, Shengli; Wang, Chaojun; Karahan, Huseyin Enis; Wang, Yanqing; Chen, Xuncai; Sui, Xiao; Huang, Qianwei; Liao, Xiaozhou; Wang, Xin; Chen, Yuan

2018-06-07

Compactness and versatility of fiber-based micro-supercapacitors (FMSCs) make them promising for emerging wearable electronic devices as energy storage solutions. But, increasing the energy storage capacity of microscale fiber electrodes, while retaining their high power density, remains a significant challenge. Here, this issue is addressed by incorporating ultrahigh mass loading of ruthenium oxide (RuO 2 ) nanoparticles (up to 42.5 wt%) uniformly on nanocarbon-based microfibers composed largely of holey reduced graphene oxide (HrGO) with a lower amount of single-walled carbon nanotubes as nanospacers. This facile approach involes (1) space-confined hydrothermal assembly of highly porous but 3D interconnected carbon structure, (2) impregnating wet carbon structures with aqueous Ru 3+ ions, and (3) anchoring RuO 2 nanoparticles on HrGO surfaces. Solid-state FMSCs assembled using those fibers demonstrate a specific volumetric capacitance of 199 F cm -3 at 2 mV s -1 . Fabricated FMSCs also deliver an ultrahigh energy density of 27.3 mWh cm -3 , the highest among those reported for FMSCs to date. Furthermore, integrating 20 pieces of FMSCs with two commercial flexible solar cells as a self-powering energy system, a light-emitting diode panel can be lit up stably. The current work highlights the excellent potential of nano-RuO 2 -decorated HrGO composite fibers for constructing micro-supercapacitors with high energy density for wearable electronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Density Memory Based on Quantum Device Technology

NASA Technical Reports Server (NTRS)

vanderWagt, Paul; Frazier, Gary; Tang, Hao

1995-01-01

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

Development of lead-free single-element ultrahigh frequency (170 – 320 MHz) ultrasonic transducers

PubMed Central

Lam, Kwok Ho; Ji, Hong Fen; Zheng, Fan; Ren, Wei; Zhou, Qifa; Shung, K. Kirk

2013-01-01

This paper presents the design, fabrication and characterization of single-element ultrahigh frequency (UHF) ultrasonic transducers in which the center frequency ranged from 170 to 320 MHz. The center frequency of > 300 MHz is the highest value of lead-free ceramic ultrasonic transducers ever reported. With concern in the environmental pollution of lead-based materials, the transducer elements presented in this work were lead-free K0.5Na0.5NbO3/Bi0.5Na0.5TiO3 (KNN/BNT) composite thick films. All transducers were evaluated in a pulse-echo arrangement. The measured −6 dB bandwidth of the transducers ranged from 35 to 64 %. With the optimized piezoelectric properties of the composite film, the insertion loss of the UHF transducers was measured and determined to range from −50 to −60 dB. In addition to the pulse-echo measurement, a 6-μm tungsten wire phantom was also imaged with a 205 MHz transducer to demonstrate the imaging capability. The measured −6 dB axial and lateral resolutions were found to be 12 μm and 50 μm, respectively. The transducer performance presented in this work is shown to be better or comparable to previously reported results even though the frequency is much higher. PMID:23485349

III-V-N materials for super high-efficiency multijunction solar cells

NASA Astrophysics Data System (ADS)

Yamaguchi, Masafumi; Bouzazi, Boussairi; Suzuki, Hidetoshi; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio

2012-10-01

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

Frequency modulation detection atomic force microscopy in the liquid environment

NASA Astrophysics Data System (ADS)

Jarvis, S. P.; Ishida, T.; Uchihashi, T.; Nakayama, Y.; Tokumoto, H.

True atomic resolution imaging using frequency modulation detection is already well established in ultra-high vacuum. In this paper we demonstrate that it also has great potential in the liquid environment. Using a combination of magnetic activation and high-aspect-ratio carbon nanotube probes, we show that imaging can be readily combined with point spectroscopy, revealing both the tip-sample interaction and the structure of the intermediate liquid.

Ultrahigh-rate supercapacitors with large capacitance based on edge oriented graphene coated carbonized cellulous paper as flexible freestanding electrodes

NASA Astrophysics Data System (ADS)

Ren, Guofeng; Li, Shiqi; Fan, Zhao-Xia; Hoque, Md Nadim Ferdous; Fan, Zhaoyang

2016-09-01

Large-capacitance and ultrahigh-rate electrochemical supercapacitors (UECs) with frequency response up to kilohertz (kHz) range are reported using light, thin, and flexible freestanding electrodes. The electrode is formed by perpendicularly edge oriented multilayer graphene/thin-graphite (EOG) sheets grown radially around individual fibers in carbonized cellulous paper (CCP), with cellulous carbonization and EOG deposition implemented in one step. The resulted ∼10 μm thick EOG/CCP electrode is light and flexible. The oriented porous structure of EOG with large surface area, in conjunction with high conductivity of the electrode, ensures ultrahigh-rate performance of the fabricated cells, with large areal capacitance of 0.59 mF cm-2 and 0.53 mF cm-2 and large phase angle of -83° and -80° at 120 Hz and 1 kHz, respectively. Particularly, the hierarchical EOG/CCP sheet structure allows multiple sheets stacked together for thick electrodes with almost linearly increased areal capacitance while maintaining the volumetric capacitance nearly no degradation, a critical merit for developing practical faraday-scale UECs. 3-layers of EOG/CCP electrode achieved an areal capacitance of 1.5 mF cm-2 and 1.4 mF cm-2 at 120 Hz and 1 kHz, respectively. This demonstration moves a step closer to the goal of bridging the frequency/capacitance gap between supercapacitors and electrolytic capacitors.

The LiteBIRD Satellite Mission: Sub-Kelvin Instrument

NASA Astrophysics Data System (ADS)

Suzuki, A.; Ade, P. A. R.; Akiba, Y.; Alonso, D.; Arnold, K.; Aumont, J.; Baccigalupi, C.; Barron, D.; Basak, S.; Beckman, S.; Borrill, J.; Boulanger, F.; Bucher, M.; Calabrese, E.; Chinone, Y.; Cho, S.; Crill, B.; Cukierman, A.; Curtis, D. W.; de Haan, T.; Dobbs, M.; Dominjon, A.; Dotani, T.; Duband, L.; Ducout, A.; Dunkley, J.; Duval, J. M.; Elleflot, T.; Eriksen, H. K.; Errard, J.; Fischer, J.; Fujino, T.; Funaki, T.; Fuskeland, U.; Ganga, K.; Goeckner-Wald, N.; Grain, J.; Halverson, N. W.; Hamada, T.; Hasebe, T.; Hasegawa, M.; Hattori, K.; Hattori, M.; Hayes, L.; Hazumi, M.; Hidehira, N.; Hill, C. A.; Hilton, G.; Hubmayr, J.; Ichiki, K.; Iida, T.; Imada, H.; Inoue, M.; Inoue, Y.; Irwin, K. D.; Ishino, H.; Jeong, O.; Kanai, H.; Kaneko, D.; Kashima, S.; Katayama, N.; Kawasaki, T.; Kernasovskiy, S. A.; Keskitalo, R.; Kibayashi, A.; Kida, Y.; Kimura, K.; Kisner, T.; Kohri, K.; Komatsu, E.; Komatsu, K.; Kuo, C. L.; Kurinsky, N. A.; Kusaka, A.; Lazarian, A.; Lee, A. T.; Li, D.; Linder, E.; Maffei, B.; Mangilli, A.; Maki, M.; Matsumura, T.; Matsuura, S.; Meilhan, D.; Mima, S.; Minami, Y.; Mitsuda, K.; Montier, L.; Nagai, M.; Nagasaki, T.; Nagata, R.; Nakajima, M.; Nakamura, S.; Namikawa, T.; Naruse, M.; Nishino, H.; Nitta, T.; Noguchi, T.; Ogawa, H.; Oguri, S.; Okada, N.; Okamoto, A.; Okamura, T.; Otani, C.; Patanchon, G.; Pisano, G.; Rebeiz, G.; Remazeilles, M.; Richards, P. L.; Sakai, S.; Sakurai, Y.; Sato, Y.; Sato, N.; Sawada, M.; Segawa, Y.; Sekimoto, Y.; Seljak, U.; Sherwin, B. D.; Shimizu, T.; Shinozaki, K.; Stompor, R.; Sugai, H.; Sugita, H.; Suzuki, J.; Tajima, O.; Takada, S.; Takaku, R.; Takakura, S.; Takatori, S.; Tanabe, D.; Taylor, E.; Thompson, K. L.; Thorne, B.; Tomaru, T.; Tomida, T.; Tomita, N.; Tristram, M.; Tucker, C.; Turin, P.; Tsujimoto, M.; Uozumi, S.; Utsunomiya, S.; Uzawa, Y.; Vansyngel, F.; Wehus, I. K.; Westbrook, B.; Willer, M.; Whitehorn, N.; Yamada, Y.; Yamamoto, R.; Yamasaki, N.; Yamashita, T.; Yoshida, M.

2018-05-01

Inflation is the leading theory of the first instant of the universe. Inflation, which postulates that the universe underwent a period of rapid expansion an instant after its birth, provides convincing explanation for cosmological observations. Recent advancements in detector technology have opened opportunities to explore primordial gravitational waves generated by the inflation through "B-mode" (divergent-free) polarization pattern embedded in the cosmic microwave background anisotropies. If detected, these signals would provide strong evidence for inflation, point to the correct model for inflation, and open a window to physics at ultra-high energies. LiteBIRD is a satellite mission with a goal of detecting degree-and-larger-angular-scale B-mode polarization. LiteBIRD will observe at the second Lagrange point with a 400 mm diameter telescope and 2622 detectors. It will survey the entire sky with 15 frequency bands from 40 to 400 GHz to measure and subtract foregrounds. The US LiteBIRD team is proposing to deliver sub-Kelvin instruments that include detectors and readout electronics. A lenslet-coupled sinuous antenna array will cover low-frequency bands (40-235 GHz) with four frequency arrangements of trichroic pixels. An orthomode-transducer-coupled corrugated horn array will cover high-frequency bands (280-402 GHz) with three types of single frequency detectors. The detectors will be made with transition edge sensor (TES) bolometers cooled to a 100 milli-Kelvin base temperature by an adiabatic demagnetization refrigerator. The TES bolometers will be read out using digital frequency multiplexing with Superconducting QUantum Interference Device (SQUID) amplifiers. Up to 78 bolometers will be multiplexed with a single SQUID amplifier. We report on the sub-Kelvin instrument design and ongoing developments for the LiteBIRD mission.

Recoverable Wire-Shaped Supercapacitors with Ultrahigh Volumetric Energy Density for Multifunctional Portable and Wearable Electronics.

PubMed

Shi, Minjie; Yang, Cheng; Song, Xuefeng; Liu, Jing; Zhao, Liping; Zhang, Peng; Gao, Lian

2017-05-24

Wire-shaped supercapacitors (SCs) based on shape memory materials are of considerable interest for next-generation portable and wearable electronics. However, the bottleneck in this field is how to develop the devices with excellent electrochemical performance while well-maintaining recoverability and flexibility. Herein, a unique asymmetric electrode concept is put forward to fabricate smart wire-shaped SCs with ultrahigh energy density, which is realized by using porous carbon dodecahedra coated on NiTi alloy wire and flexible graphene fiber as yarn electrodes. Notably, the wire-shaped SCs not only exhibit high flexibility that can be readily woven into real clothing but also represent the available recoverable ability. When irreversible plastic deformations happen, the deformed shape of the devices can automatically resume the initial predesigned shape in a warm environment (about 35 °C). More importantly, the wire-shaped SCs act as efficient energy storage devices, which display high volumetric energy density (8.9 mWh/cm 3 ), volumetric power density (1080 mW/cm 3 ), strong durability in multiple mechanical states, and steady electrochemical behavior after repeated shape recovery processes. Considering their relative facile fabrication technology and excellent electrochemical performance, this asymmetric electrode strategy produced smart wire-shaped supercapacitors desirable for multifunctional portable and wearable electronics.

Ultra-High Pressure Driver and Nozzle Survivability in the RDHWT/MARIAH II Hypersonic Wind Tunnel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costantino, M.; Brown, G.; Raman, K.

2000-06-02

An ultra-high pressure device provides a high enthalpy (> 2500 kJ/kg), low entropy (< 5 kJ/kg-K) air source for the RDHWT/MARIAH II Program Medium Scale Hypersonic Wind Tunnel. The design uses stagnation conditions of 2300 MPa (330,000 Psi) and 750 K (900 F) in a radial configuration of intensifiers around an axial manifold to deliver pure air at 100 kg/s mass flow rates for run times suitable for aerodynamic, combustion, and test and evaluation applications. Helium injection upstream of the nozzle throat reduces the throat wall recovery temperature to about 1200 K and reduces the oxygen concentration at the nozzlemore » wall.« less

Radio astronomy ultra-low-noise amplifier for operation at 91 cm wavelength in high RFI environment

NASA Astrophysics Data System (ADS)

Korolev, A. M.; Zakharenko, V. V.; Ulyanov, O. M.

2016-02-01

An ultra-low-noise input amplifier intended for a use in a radio telescope operating at 91 cm wavelength is presented. The amplifier noise temperatures are 12.8 ± 1.5 and 10.0 ± 1.5 K at ambient temperatures of 293 and 263 K respectively. The amplifier does not require cryogenic cooling. It can be quickly put in operation thus shortening losses in the telescope observation time. High linearity of the amplifier (output power at 1 dB gain compression P1dB ≥ 22 dBm, output third order intercept point OIP3 ≥ 37 dBm) enables the telescope operation in highly urbanized and industrialized regions. To obtain low noise characteristics along with high linearity, high-electron-mobility field-effect transistors were used in parallel in the circuit developed. The transistors used in the amplifier are cost-effective and commercially available. The circuit solution is recommended for similar devices working in ultra-high frequency band.

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

PubMed Central

Hsu, Tsung-Hsing; Manakasettharn, Supone; Taylor, J. Ashley; Krupenkin, Tom

2015-01-01

We have proposed and successfully demonstrated a novel approach to direct conversion of mechanical energy into electrical energy using microfluidics. The method combines previously demonstrated reverse electrowetting on dielectric (REWOD) phenomenon with the fast self-oscillating process of bubble growth and collapse. Fast bubble dynamics, used in conjunction with REWOD, provides a possibility to increase the generated power density by over an order of magnitude, as compared to the REWOD alone. This energy conversion approach is particularly well suited for energy harvesting applications and can enable effective coupling to a broad array of mechanical systems including such ubiquitous but difficult to utilize low-frequency energy sources as human and machine motion. The method can be scaled from a single micro cell with 10−6 W output to power cell arrays with a total power output in excess of 10 W. This makes the fabrication of small light-weight energy harvesting devices capable of producing a wide range of power outputs feasible. PMID:26567850

Fabrication of thickness controllable free-standing sandwich-structured hybrid carbon film for high-rate and high-power supercapacitor

PubMed Central

Wei, Helin; Wei, Sihang; Tian, Weifeng; Zhu, Daming; Liu, Yuhao; Yuan, Lili; Li, Xin

2014-01-01

Hybrid carbon films composed of graphene film and porous carbon film may give full play to the advantages of both carbon materials, and have great potential for application in energy storage and conversion devices. Unfortunately, there are very few reports on fabrication of hybrid carbon films. Here we demonstrate a simple approach to fabricate free-standing sandwich-structured hybrid carbon film composed of porous amorphous carbon film and multilayer graphene film by chemical vapor deposition in a controllable and scalable way. Hybrid carbon films reveal good electrical conductivity, excellent flexibility, and good compatibility with substrate. Supercapacitors assembled by hybrid carbon films exhibit ultrahigh rate capability, wide frequency range, good capacitance performance, and high-power density. Moreover, this approach may provide a general path for fabrication of hybrid carbon materials with different structures by using different metals with high carbon solubility, and greatly expands the application scope of carbon materials. PMID:25394410

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting.

PubMed

Hsu, Tsung-Hsing; Manakasettharn, Supone; Taylor, J Ashley; Krupenkin, Tom

2015-11-16

We have proposed and successfully demonstrated a novel approach to direct conversion of mechanical energy into electrical energy using microfluidics. The method combines previously demonstrated reverse electrowetting on dielectric (REWOD) phenomenon with the fast self-oscillating process of bubble growth and collapse. Fast bubble dynamics, used in conjunction with REWOD, provides a possibility to increase the generated power density by over an order of magnitude, as compared to the REWOD alone. This energy conversion approach is particularly well suited for energy harvesting applications and can enable effective coupling to a broad array of mechanical systems including such ubiquitous but difficult to utilize low-frequency energy sources as human and machine motion. The method can be scaled from a single micro cell with 10(-6) W output to power cell arrays with a total power output in excess of 10 W. This makes the fabrication of small light-weight energy harvesting devices capable of producing a wide range of power outputs feasible.

Ultrasensitive Mach-Zehnder Interferometric Temperature Sensor Based on Liquid-Filled D-Shaped Fiber Cavity.

PubMed

Zhang, Hui; Gao, Shecheng; Luo, Yunhan; Chen, Zhenshi; Xiong, Songsong; Wan, Lei; Huang, Xincheng; Huang, Bingsen; Feng, Yuanhua; He, Miao; Liu, Weiping; Chen, Zhe; Li, Zhaohui

2018-04-17

A liquid-filled D-shaped fiber (DF) cavity serving as an in-fiber Mach–Zehnder interferometer (MZI) has been proposed and experimentally demonstrated for temperature sensing with ultrahigh sensitivity. The miniature MZI is constructed by splicing a segment of DF between two single-mode fibers (SMFs) to form a microcavity (MC) for filling and replacement of various refractive index (RI) liquids. By adjusting the effective RI difference between the DF and MC (the two interference arms), experimental and calculated results indicate that the interference spectra show different degrees of temperature dependence. As the effective RI of the liquid-filled MC approaches that of the DF, temperature sensitivity up to −84.72 nm/°C with a linear correlation coefficient of 0.9953 has been experimentally achieved for a device with the MC length of 456 μm, filled with liquid RI of 1.482. Apart from ultrahigh sensitivity, the proposed MCMZI device possesses additional advantages of its miniature size and simple configuration; these features make it promising and competitive in various temperature sensing applications, such as consumer electronics, biological treatments, and medical diagnosis.

Measurement of the detective quantum efficiency in digital detectors consistent with the IEC 62220-1 standard: Practical considerations regarding the choice of filter material.

PubMed

Ranger, Nicole T; Samei, Ehsan; Dobbins, James T; Ravin, Carl E

2005-07-01

As part of a larger evaluation we attempted to measure the detective quantum efficiency (DQE) of an amorphous silicon flat-panel detector using the method described in the International Electrotechnical Commission standard 62220-1 published in October 2003. To achieve the radiographic beam conditions specified in the standard, we purchased scientific-grade ultrahigh purity aluminum (99.999% purity, type-11999 alloy) filters in thicknesses ranging from 0.1 through 10.0 mm from a well-known, specialty metals supplier. Qualitative evaluation of flat field images acquired at 71 kV (RQA5 beam quality) with 21 mm of ultrahigh purity aluminum filtration demonstrated a low frequency mottle that was reproducible and was not observed when the measurement was repeated at 74 kV (RQA5 beam quality) with 21 mm of lower-purity aluminum (99.0% purity, type-1100 alloy) filtration. This finding was ultimately attributed to the larger grain size (approximately 1-2 mm) of high purity aluminum metal, which is a well-known characteristic, particularly in thicknesses greater than 1 mm. The impact of this low frequency mottle is to significantly overestimate the noise power spectrum (NPS) at spatial frequencies ⩽0.2mm-1, which in turn would cause an underestimation of the DQE in this range. A subsequent evaluation of ultrahigh purity aluminum, purchased from a second source, suggests, that reduced grain size can be achieved by the process of annealing. Images acquired with this sample demonstrated vertical striated nonuniformities that are attributed to the manufacturing method and which do not appear to appreciably impact the NPS at spatial frequencies ⩾0.5mm-1, but do result in an asymmetry in the x- and y-NPS at spatial frequencies ⩽0.2mm-1. Our observations of markedly visible nonuniformities in images acquired with high purity aluminum filtration suggest that the uniformity of filter materials should be carefully evaluated and taken into consideration when measuring the DQE. © 2005 American Association of Physicists in Medicine.

Solar energy converters based on multi-junction photoemission solar cells.

PubMed

Tereshchenko, O E; Golyashov, V A; Rodionov, A A; Chistokhin, I B; Kislykh, N V; Mironov, A V; Aksenov, V V

2017-11-23

Multi-junction solar cells with multiple p-n junctions made of different semiconductor materials have multiple bandgaps that allow reducing the relaxation energy loss and substantially increase the power-conversion efficiency. The choice of materials for each sub-cell is very limited due to the difficulties in extracting the current between the layers caused by the requirements for lattice- and current-matching. We propose a new vacuum multi-junction solar cell with multiple p-n junctions separated by vacuum gaps that allow using different semiconductor materials as cathode and anode, both activated to the state of effective negative electron affinity (NEA). In this work, the compact proximity focused vacuum tube with the GaAs(Cs,O) photocathode and AlGaAs/GaAs-(Cs,O) anode with GaAs quantum wells (QWs) is used as a prototype of a vacuum single-junction solar cell. The photodiode with the p-AlGaAs/GaAs anode showed the spectral power-conversion efficiency of about 1% at V bias  = 0 in transmission and reflection modes, while, at V bias  = 0.5 V, the efficiency increased up to 10%. In terms of energy conservation, we found the condition at which the energy cathode-to-anode transition was close to 1. Considering only the energy conservation part, the NEA-cell power-conversion efficiency can rich a quantum yield value which is measured up to more than 50%.

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

PubMed

Gonzalo, A; Utrilla, A D; Reyes, D F; Braza, V; Llorens, J M; Fuertes Marrón, D; Alén, B; Ben, T; González, D; Guzman, A; Hierro, A; Ulloa, J M

2017-06-21

Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV material lattice-matched to GaAs/Ge. Nevertheless, the lack of suitable semiconductor materials is hindering the achievement of the predicted efficiencies, since the only candidates were up to now complex quaternary and quinary alloys with inherent epitaxial growth problems that degrade carrier dynamics. Here we show how the use of strain-balanced GaAsSb/GaAsN superlattices might solve this problem. We demonstrate that the spatial separation of Sb and N atoms avoids the ubiquitous growth problems and improves crystal quality. Moreover, these new structures allow for additional control of the effective bandgap through the period thickness and provide a type-II band alignment with long carrier lifetimes. All this leads to a strong enhancement of the external quantum efficiency under photovoltaic conditions with respect to bulk layers of equivalent thickness. Our results show that GaAsSb/GaAsN superlattices with short periods are the ideal (pseudo)material to be integrated in new GaAs/Ge-based multi-junction solar cells that could approach the theoretical efficiency limit.

Ultra-high resistive and anisotropic CoPd-CaF2 nanogranular soft magnetic films prepared by tandem-sputtering deposition

NASA Astrophysics Data System (ADS)

Naoe, Masayuki; Kobayashi, Nobukiyo; Ohnuma, Shigehiro; Iwasa, Tadayoshi; Arai, Ken-Ichi; Masumoto, Hiroshi

2015-10-01

Ultra-high resistive and anisotropic soft magnetic films for gigahertz applications are desirable to demonstrate the really practical films. Here we present a study of novel nanogranular films fabricated by tandem-sputtering deposition. Their electromagnetic properties and nanostructure have also been discussed. These films consisted of nanocrystallized CoPd alloy-granules and CaF2 matrix, and a specimen having a composition of (Co0.69Pd0.31)52-(Ca0.31F0.69)48 exhibited distinct in-plane uniaxial anisotropy after uniaxial field annealing with granule growth. Its complex permeability spectra have a ferromagnetic resonance frequency extending to the Super-High-Frequency band due to its higher anisotropy field, and its frequency response was quite well reproduced by a numerical calculation based on the Landau-Lifshitz-Gilbert equation. Furthermore, it was clarified that the CaF2-based nanogranular film exhibits a hundredfold higher electrical resistivity than conventional oxide or nitride-based films. Higher resistivity enables the film thickness to achieve a margin exceeding threefold against eddy current loss. The greater resistivity of nanogranular films is attributed to the wide energy bandgap and superior crystallinity of CaF2 matrix.

Further Analyses of the NASA Glenn Research Center Solar Cell and Photovoltaic Materials Experiment Onboard the International Space Station

NASA Technical Reports Server (NTRS)

Myers, Matthew G.; Prokop, Norman F.; Krasowski, Michael J.; Piszczor, Michael F.; McNatt, Jeremiah S.

2016-01-01

Accurate air mass zero (AM0) measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. The NASA Glenn Research Center (GRC) has flown an experiment designed to measure the electrical performance of several solar cells onboard NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4) on the exterior of the International Space Station (ISS). Four industry and government partners provided advanced PV devices for measurement and orbital environment testing. The experiment was positioned on the exterior of the station for approximately eight months, and was completely self-contained, providing its own power and internal data storage. Several new cell technologies including four-junction (4J) Inverted Metamorphic Multi-Junction (IMM) cells were evaluated and the results will be compared to ground-based measurement methods.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

NASA Astrophysics Data System (ADS)

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He-Hau, Jr.

2016-12-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Tissue Variability and Antennas for Power Transfer to Wireless Implantable Medical Devices.

PubMed

Bocan, Kara N; Mickle, Marlin H; Sejdic, Ervin

2017-01-01

The design of effective transcutaneous systems demands the consideration of inevitable variations in tissue characteristics, which vary across body areas, among individuals, and over time. The purpose of this paper was to design and evaluate several printed antenna topologies for ultrahigh frequency (UHF) transcutaneous power transfer to implantable medical devices, and to investigate the effects of variations in tissue properties on dipole and loop topologies. Here, we show that a loop antenna topology provides the greatest achievable gain with the smallest implanted antenna, while a dipole system provides higher impedance for conjugate matching and the ability to increase gain with a larger external antenna. In comparison to the dipole system, the loop system exhibits greater sensitivity to changes in tissue structure and properties in terms of power gain, but provides higher gain when the separation is on the order of the smaller antenna dimension. The dipole system was shown to provide higher gain than the loop system at greater implant depths for the same implanted antenna area, and was less sensitive to variations in tissue properties and structure in terms of power gain at all investigated implant depths. The results show the potential of easily-fabricated, low-cost printed antenna topologies for UHF transcutaneous power, and the importance of environmental considerations in choosing the antenna topology.

Tissue Variability and Antennas for Power Transfer to Wireless Implantable Medical Devices

PubMed Central

Bocan, Kara N.; Mickle, Marlin H.

2017-01-01

The design of effective transcutaneous systems demands the consideration of inevitable variations in tissue characteristics, which vary across body areas, among individuals, and over time. The purpose of this paper was to design and evaluate several printed antenna topologies for ultrahigh frequency (UHF) transcutaneous power transfer to implantable medical devices, and to investigate the effects of variations in tissue properties on dipole and loop topologies. Here, we show that a loop antenna topology provides the greatest achievable gain with the smallest implanted antenna, while a dipole system provides higher impedance for conjugate matching and the ability to increase gain with a larger external antenna. In comparison to the dipole system, the loop system exhibits greater sensitivity to changes in tissue structure and properties in terms of power gain, but provides higher gain when the separation is on the order of the smaller antenna dimension. The dipole system was shown to provide higher gain than the loop system at greater implant depths for the same implanted antenna area, and was less sensitive to variations in tissue properties and structure in terms of power gain at all investigated implant depths. The results show the potential of easily-fabricated, low-cost printed antenna topologies for UHF transcutaneous power, and the importance of environmental considerations in choosing the antenna topology. PMID:29018637

Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

PubMed

Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

2014-01-01

The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

Integrated computational study of ultra-high heat flux cooling using cryogenic micro-solid nitrogen spray

NASA Astrophysics Data System (ADS)

Ishimoto, Jun; Oh, U.; Tan, Daisuke

2012-10-01

A new type of ultra-high heat flux cooling system using the atomized spray of cryogenic micro-solid nitrogen (SN2) particles produced by a superadiabatic two-fluid nozzle was developed and numerically investigated for application to next generation super computer processor thermal management. The fundamental characteristics of heat transfer and cooling performance of micro-solid nitrogen particulate spray impinging on a heated substrate were numerically investigated and experimentally measured by a new type of integrated computational-experimental technique. The employed Computational Fluid Dynamics (CFD) analysis based on the Euler-Lagrange model is focused on the cryogenic spray behavior of atomized particulate micro-solid nitrogen and also on its ultra-high heat flux cooling characteristics. Based on the numerically predicted performance, a new type of cryogenic spray cooling technique for application to a ultra-high heat power density device was developed. In the present integrated computation, it is clarified that the cryogenic micro-solid spray cooling characteristics are affected by several factors of the heat transfer process of micro-solid spray which impinges on heated surface as well as by atomization behavior of micro-solid particles. When micro-SN2 spraying cooling was used, an ultra-high cooling heat flux level was achieved during operation, a better cooling performance than that with liquid nitrogen (LN2) spray cooling. As micro-SN2 cooling has the advantage of direct latent heat transport which avoids the film boiling state, the ultra-short time scale heat transfer in a thin boundary layer is more possible than in LN2 spray. The present numerical prediction of the micro-SN2 spray cooling heat flux profile can reasonably reproduce the measurement results of cooling wall heat flux profiles. The application of micro-solid spray as a refrigerant for next generation computer processors is anticipated, and its ultra-high heat flux technology is expected to result in an extensive improvement in the effective cooling performance of large scale supercomputer systems.

Routes to spatiotemporal chaos in Kerr optical frequency combs.

PubMed

Coillet, Aurélien; Chembo, Yanne K

2014-03-01

We investigate the various routes to spatiotemporal chaos in Kerr optical frequency combs, obtained through pumping an ultra-high Q-factor whispering-gallery mode resonator with a continuous-wave laser. The Lugiato-Lefever model is used to build bifurcation diagrams with regards to the parameters that are externally controllable, namely, the frequency and the power of the pumping laser. We show that the spatiotemporal chaos emerging from Turing patterns and solitons display distinctive dynamical features. Experimental spectra of chaotic Kerr combs are also presented for both cases, in excellent agreement with theoretical spectra.

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Deen, D. A.; Storm, D. F.; Bass, R.; Meyer, D. J.; Katzer, D. S.; Binari, S. C.; Lacis, J. W.; Gougousi, T.

2011-01-01

AlN/GaN heterostructures with a 3.5 nm AlN cap have been grown by molecular beam epitaxy followed by a 6 nm thick atomic layer deposited Ta2O5 film. Transistors fabricated with 150 nm length gates showed drain current density of 1.37 A/mm, transconductance of 315 mS/mm, and sustained drain-source biases up to 96 V while in the off-state before destructive breakdown as a result of the Ta2O5 gate insulator. Terman's method has been modified for the multijunction capacitor and allowed the measurement of interface state density (˜1013 cm-2 eV-1). Small-signal frequency performance of 75 and 115 GHz was obtained for ft and fmax, respectively.

Optimization of absorption bands of dye-sensitized and perovskite tandem solar cells based on loss-in-potential values.

PubMed

Sobuś, Jan; Ziółek, Marcin

2014-07-21

A numerical study of optimal bandgaps of light absorbers in tandem solar cell configurations is presented with the main focus on dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). The limits in efficiency and the expected improvements of tandem structures are investigated as a function of total loss-in-potential (V(L)), incident photon to current efficiency (IPCE) and fill factor (FF) of individual components. It is shown that the optimal absorption onsets are significantly smaller than those derived for multi-junction devices. For example, for double-cell devices the onsets are at around 660 nm and 930 nm for DSSCs with iodide based electrolytes and at around 720 nm and 1100 nm for both DSSCs with cobalt based electrolytes and PSCs. Such configurations can increase the total sunlight conversion efficiency by about 35% in comparison to single-cell devices of the same VL, IPCE and FF. The relevance of such studies for tandem n-p DSSCs and for a proposed new configuration for PSCs is discussed. In particular, it is shown that maximum total losses of 1.7 V for DSSCs and 1.4 V for tandem PSCs are necessary to give any efficiency improvement with respect to the single bandgap device. This means, for example, a tandem n-p DSSC with TiO2 and NiO porous electrodes will hardly work better than the champion single DSSC. A source code of the program used for calculations is also provided.

30% CPV Module Milestone

NASA Astrophysics Data System (ADS)

Gordon, Robert; Kinsey, Geoff; Nayaak, Adi; Garboushian, Vahan

2010-10-01

Concentrating Photovoltaics has held out the promise of low cost solar electricity for now several decades. Steady progress towards this goal in the 80's and 90's gradually produced more efficient and reliable systems. System efficiency is regarded as the largest factor in lowering the electricity cost and the relatively recent advent of the terrestrial multi-junction solar cell has pressed this race forward dramatically. CPV systems are now exhibiting impressive AC field efficiencies of 25% and more, approximately twice that of the best flat plate systems available today. Amonix inc. has just tested their latest generation multi-junction module design, achieving over 31% DC efficiency at near PVUSA test conditions. Inculcating this design into their next MegaModule is forthcoming, but the expected AC system field efficiency should be significantly higher than current 25% levels.

Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells.

PubMed

Lee, Ya-Ju; Yao, Yung-Chi; Tsai, Meng-Tsan; Liu, An-Fan; Yang, Min-De; Lai, Jiun-Tsuen

2013-11-04

A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs.

Multijunction InGaAs thermophotovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.

1998-12-31

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, thereby providing for high system efficiencies. MIMs were fabricated with an active area of 0.9 {times} 1 cm, and with 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were fabricated, with bandgaps of 0.74 and 0.55more » eV, respectively. The 0.74 eV MIMs demonstrated an open-circuit voltage (Voc) of 6.16 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 0.84 A/cm{sup 2}, under flashlamp testing. The 0.55 eV MIMs demonstrated a Voc of 4.85 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. Electrical performance results for these MIMs are presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emery, K.

Evaluate MicroLink cells as a function of temperature and spectral irradiance following the teams' standard procedures. These measurements will include the standard procedures for evaluating multijunction cells including quantum efficiency measurements and current versus voltage measurements.

Quantum percolation phase transition and magnetoelectric dipole glass in hexagonal ferrites

NASA Astrophysics Data System (ADS)

Rowley, S. E.; Vojta, T.; Jones, A. T.; Guo, W.; Oliveira, J.; Morrison, F. D.; Lindfield, N.; Baggio Saitovitch, E.; Watts, B. E.; Scott, J. F.

2017-07-01

Hexagonal ferrites not only have enormous commercial impact (£2 billion/year in sales) due to applications that include ultrahigh-density memories, credit-card stripes, magnetic bar codes, small motors, and low-loss microwave devices, they also have fascinating magnetic and ferroelectric quantum properties at low temperatures. Here we report the results of tuning the magnetic ordering temperature in PbF e12 -xG axO19 to zero by chemical substitution x . The phase transition boundary is found to vary as TN˜(1-x /xc ) 2 /3 with xc very close to the calculated spin percolation threshold, which we determine by Monte Carlo simulations, indicating that the zero-temperature phase transition is geometrically driven. We find that this produces a form of compositionally tuned, insulating, ferrimagnetic quantum criticality. Close to the zero-temperature phase transition, we observe the emergence of an electric dipole glass induced by magnetoelectric coupling. The strong frequency behavior of the glass freezing temperature Tm has a Vogel-Fulcher dependence with Tm finite, or suppressed below zero in the zero-frequency limit, depending on composition x . These quantum-mechanical properties, along with the multiplicity of low-lying modes near the zero-temperature phase transition, are likely to greatly extend applications of hexaferrites into the realm of quantum and cryogenic technologies.

High-frequency (13.56-MHz) and ultrahigh-frequency (915-MHz) radio identification systems do not affect platelet activation and functions.

PubMed

Rogowska, Anna; Chabowska, Anna Małgorzata; Lipska, Alina; Boczkowska-Radziwon, Barbara; Bujno, Magdalena; Rusak, Tomasz; Dziemianczuk, Mateusz; Radziwon, Piotr

2016-05-01

In radiofrequency identification (RFID) systems used in labeling of blood components, blood cells are subjected to the direct influence of electromagnetic waves throughout the storage period. The aim of this study was to prove the safety of storage of platelet concentrates (PCs) in containers labeled with RFID tags. Ten pooled PCs obtained from 12 buffy coats each suspended in additive solution were divided into three separate containers that were assigned to three groups: control, PCs labeled with ultrahigh frequency (UHF) range tags and exposed to 915-MHz radio waves, and PCs labeled with high-frequency (HF) range tags and exposed to 13.56-MHz radio waves. PCs were stored at 20 to 24°C for 7 days. In vitro tests of platelet (PLT) function were performed on the first, fifth, and seventh days of storage. There were no significant differences in pH; hypotonic shock resistance; surface expression of CD62P, CD42a, or CD63; release of PLT-derived microparticles; PLT aggregation; and number of PLTs between PCs stored at a constant exposure to radio waves of two different frequencies and the control group on the first, fifth, and seventh days of storage. The results of the study indicate no impact of electromagnetic radiation generated in HF and UHF RFID systems and constant contact with the tags on the quality of stored PCs. © 2016 AABB.

Back in Time

NASA Technical Reports Server (NTRS)

1998-01-01

Under a Jet Propulsion Laboratory SBIR (Small Business Innovative Research), Cambridge Research and Instrumentation Inc., developed a new class of filters for the construction of small, low-cost multispectral imagers. The VariSpec liquid crystal enables users to obtain multi-spectral, ultra-high resolution images using a monochrome CCD (charge coupled device) camera. Application areas include biomedical imaging, remote sensing, and machine vision.

Identification of vibrational signatures from short chains of interlinked molecule-nanoparticle junctions obtained by inelastic electron tunnelling spectroscopy

NASA Astrophysics Data System (ADS)

Jafri, S. H. M.; Löfås, H.; Fransson, J.; Blom, T.; Grigoriev, A.; Wallner, A.; Ahuja, R.; Ottosson, H.; Leifer, K.

2013-05-01

Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra.Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra. Electronic supplementary information (ESI) available: Methods and materials. Details of the ab initio calculation of molecular vibrations and inelastic spectra of ODT between two Au electrodes. A model of carrier transport through the molecular junctions. See DOI: 10.1039/c3nr00505d

Digital output compensation for precise frequency transfer over commercial fiber link

NASA Astrophysics Data System (ADS)

Ci, Cheng; Wu, Hong; Tang, Ran; Liu, Bo; Chen, Xing; Zhang, Xue-song; Zhang, Yu; Zhao, Ying-xin

2018-03-01

An ultra-highly precise and long-term stable frequency transmission system over 120 km commercial fiber link has been proposed and experimentally demonstrated. This system is based on digital output compensation technique to suppress phase fluctuations during the frequency transmission process. A mode-locked erbium-doped fiber laser driven by a hydrogen maser serves as an optical transmitter. Moreover, a dense wavelength division multiplexing system is able to separate forward and backward signals with reflection effect excluded. The ultimate fractional frequency instabilities for the long-distance frequency distributed system are up to 3.14×10-15 at 1 s and 2.96×10-19 at 10 000 s, respectively.

Driving ferromagnetic resonance frequency of FeCoB/PZN-PT multiferroic heterostructures to Ku-band via two-step climbing: composition gradient sputtering and magnetoelectric coupling

PubMed Central

Li, Shandong; Xue, Qian; Duh, Jenq-Gong; Du, Honglei; Xu, Jie; Wan, Yong; Li, Qiang; Lü, Yueguang

2014-01-01

RF/microwave soft magnetic films (SMFs) are key materials for miniaturization and multifunctionalization of monolithic microwave integrated circuits (MMICs) and their components, which demand that the SMFs should have higher self-bias ferromagnetic resonance frequency fFMR, and can be fabricated in an IC compatible process. However, self-biased metallic SMFs working at X-band or higher frequency were rarely reported, even though there are urgent demands. In this paper, we report an IC compatible process with two-step superposition to prepare SMFs, where the FeCoB SMFs were deposited on (011) lead zinc niobate–lead titanate substrates using a composition gradient sputtering method. As a result, a giant magnetic anisotropy field of 1498 Oe, 1–2 orders of magnitude larger than that by conventional magnetic annealing method, and an ultrahigh fFMR of up to 12.96 GHz reaching Ku-band, were obtained at zero magnetic bias field in the as-deposited films. These ultrahigh microwave performances can be attributed to the superposition of two effects: uniaxial stress induced by composition gradient and magnetoelectric coupling. This two-step superposition method paves a way for SMFs to surpass X-band by two-step or multi-step, where a variety of magnetic anisotropy field enhancing methods can be cumulated together to get higher ferromagnetic resonance frequency. PMID:25491374

Search for ultra high energy astrophysical neutrinos with the ANITA experiment

NASA Astrophysics Data System (ADS)

Romero-Wolf, Andrew

2010-12-01

This work describes a search for cosmogenic neutrinos at energies above 1018 eV with the Antarctic Impulsive Transient Antenna (ANITA). ANITA is a balloon-borne radio interferometer designed to measure radio impulsive emission from particle showers produced in the Antarctic ice-sheet by ultra-high energy neutrinos (UHEnu). Flying at 37 km altitude the ANITA detector is sensitive to 1M km3 of ice and is expected to produce the highest exposure to ultra high energy neutrinos to date. The design, flight performance, and analysis of the first flight of ANITA in 2006 are the subject of this dissertation. Due to sparse anthropogenic backgrounds throughout the Antarctic continent, the ANITA analysis depends on high resolution directional reconstruction. An interferometric method was developed that not only provides high resolution but is also sensitive to very weak radio emissions. The results of ANITA provide the strongest constraints on current ultra-high energy neutrino models. In addition there was a serendipitous observation of ultra-high energy cosmic ray geosynchrotron emissions that are of distinct character from the expected neutrino signal. This thesis includes a study of the radio Cherenkov emission from ultra-high energy electromagnetic showers in ice in the time-domain. All previous simulations computed the radio pulse frequency spectrum. I developed a purely time-domain algorithm for computing radiation using the vector potentials of charged particle tracks. The results are fully consistent with previous frequency domain calculations and shed new light into the properties of the radio pulse in the time domain. The shape of the pulse in the time domain is directly related to the depth development of the excess charge in the shower and its width to the observation angle with respect to the Cherenkov direction. This information can be of great practical importance for interpreting actual data.

Computational Modeling | Photovoltaic Research | NREL

Science.gov Websites

performance of single- and multijunction cells and modules. We anticipate the upcoming completion of our next software package for a simplified electronic design of single- and multicrystalline silicon solar cells

Wafer integrated micro-scale concentrating photovoltaics

NASA Astrophysics Data System (ADS)

Gu, Tian; Li, Duanhui; Li, Lan; Jared, Bradley; Keeler, Gordon; Miller, Bill; Sweatt, William; Paap, Scott; Saavedra, Michael; Das, Ujjwal; Hegedus, Steve; Tauke-Pedretti, Anna; Hu, Juejun

2017-09-01

Recent development of a novel micro-scale PV/CPV technology is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The wafer-embedded micro-concentrating elements is shown to considerably improve the concentration-acceptance-angle product, potentially leading to dramatically reduced module materials and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture, which makes the WPV module compatible with commercial flat panel infrastructures. The PV/CPV hybrid architecture further allows the collection of both direct and diffuse sunlight, thus extending the geographic and market domains for cost-effective PV system deployment. The WPV approach can potentially benefits from both the high performance of multijunction cells and the low cost of flat plate Si PV systems.

Graphene-Enhanced Thermal Interface Materials for Thermal Management of Solar Cells

NASA Astrophysics Data System (ADS)

Saadah, Mohammed Ahmed

The interest to photovoltaic solar cells as a source of energy for a variety of applications has been rapidly increasing in recent years. Solar cells panels that employ optical concentrators can convert more than 30% of absorbed light into electricity. Most of the remaining 70% of absorbed energy is turned into heat inside the solar cell. The increase in the photovoltaic cell temperature negatively affects its power conversion efficiency and lifetime. In this dissertation research I investigated a feasibility of using graphene fillers in thermal interface materials for improving thermal management of multi-junction concentrator solar cells. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Characteristics of the composites have been examined with Raman spectroscopy, optical microscopy and thermal conductivity measurements. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the single and multi-junction solar cells has been tested using an industry-standard solar simulator under the light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated and multi-junction photovoltaic solar cells.

Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musalinov, S. B.; Anzulevich, A. P.; Bychkov, I. V.

2017-01-15

The results of simulation by the transfer-matrix method of TiO{sub 2}/SiO{sub 2} double-layer and TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coatings for multijunction InGaP/GaAs/Ge heterostructure solar cells are presented. The TiO{sub 2}/SiO{sub 2} double-layer antireflection coating is experimentally developed and optimized. The experimental spectral dependences of the external quantum yield of the InGaP/GaAs/Ge heterostructure solar cell and optical characteristics of antireflection coatings, obtained in the simulation, are used to determine the photogenerated current densities of each subcell in the InGaP/GaAs/Ge solar cell under AM1.5D irradiation conditions (1000 W/m{sup 2}) and for the case of zero reflection loss. It ismore » shown in the simulation that the optimized TiO{sub 2}/Si{sub 3}N{sub 4}/SiO{sub 2} triple-layer antireflection coating provides a 2.3 mA/cm{sup 2} gain in the photocurrent density for the Ge subcell under AM1.5D conditions in comparison with the TiO{sub 2}/SiO{sub 2} double-layer antireflection coating under consideration. This thereby provides an increase in the fill factor of the current–voltage curve and in the output electric power of the multijunction solar cell.« less

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

NASA Technical Reports Server (NTRS)

Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M., Sr.; Weizer, Victor G.

2002-01-01

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Improving distillation method and device of tritiated water analysis for ultra high decontamination efficiency.

PubMed

Fang, Hsin-Fa; Wang, Chu-Fang; Lin, Chien-Kung

2015-12-01

It is important that monitoring environmental tritiated water for understanding the contamination dispersion of the nuclear facilities. Tritium is a pure beta radionuclide which is usually measured by Liquid Scintillation Counting (LSC). The average energy of tritum beta is only 5.658 keV that makes the LSC counting of tritium easily be interfered by the beta emitted by other radionuclides. Environmental tritiated water samples usually need to be decontaminated by distillation for reducing the interference. After Fukushima Nucleaer Accident, the highest gross beta concentration of groundwater samples obtained around Fukushima Daiichi Nuclear Power Station is over 1,000,000 Bq/l. There is a need for a distillation with ultra-high decontamination efficiency for environmental tritiated water analysis. This study is intended to improve the heating temperature control for better sub-boiling distillation control and modify the height of the container of the air cooling distillation device for better fractional distillation effect. The DF of Cs-137 of the distillation may reach 450,000 which is far better than the prior study. The average loss rate of the improved method and device is about 2.6% which is better than the bias value listed in the ASTM D4107-08. It is proven that the modified air cooling distillation device can provide an easy-handling, water-saving, low cost and effective way of purifying water samples for higher beta radionuclides contaminated water samples which need ultra-high decontamination treatment. Copyright © 2015 Elsevier Ltd. All rights reserved.

Detection of Ultrahigh-Energy Cosmic Rays with the Auger Engineering Radio Array

NASA Astrophysics Data System (ADS)

Krause, Raphael; Pierre Auger Collaboration

2017-02-01

Ultrahigh-energy cosmic rays interact with the Earth's atmosphere and produce great numbers of secondary particles forming an extensive air shower. These air showers emit radiation in the radio frequency range which delivers important information about the processes of radio emission in extensive air showers and properties of the primary cosmic rays, e.g. arrival direction, energy and mass with a duty cycle close to 100%. The radio extension of the world's largest cosmic-ray experiment, the Pierre Auger Observatory, is called the Auger Engineering Radio Array (AERA). In addition to the particle and fluorescence detectors of the Pierre Auger Observatory, AERA investigates the electromagnetic component of extensive air showers using 153 autonomous radio stations on an area of 17km2 .

Comb-referenced ultra-high sensitivity spectroscopic molecular detection by compact non-linear sources

NASA Astrophysics Data System (ADS)

Cancio, P.; Gagliardi, G.; Galli, I.; Giusfredi, G.; Maddaloni, P.; Malara, P.; Mazzotti, D.; De Natale, P.

2017-11-01

We present a new generation of compact and rugged mid-infrared (MIR) difference-frequency coherent radiation sources referenced to fiber-based optical frequency comb synthesizers (OFCSs). By coupling the MIR radiation to high-finesse optical cavities, high-resolution and high-sensitivity spectroscopy is demonstrated for CH4 and CO2 around 3.3 and 4.5 μm respectively. Finally, the most effective detection schemes for space-craft trace-gas monitoring applications are singled out.

Jammed-array wideband sawtooth filter.

PubMed

Tan, Zhongwei; Wang, Chao; Goda, Keisuke; Malik, Omer; Jalali, Bahram

2011-11-21

We present an all-optical passive low-cost spectral filter that exhibits a high-resolution periodic sawtooth spectral pattern without the need for active optoelectronic components. The principle of the filter is the partial masking of a phased array of virtual light sources with multiply jammed diffraction orders. We utilize the filter's periodic linear map between frequency and intensity to demonstrate fast sensitive interrogation of fiber Bragg grating sensor arrays and ultrahigh-frequency electrical sawtooth waveform generation. © 2011 Optical Society of America

Ultrasensitive Mach-Zehnder Interferometric Temperature Sensor Based on Liquid-Filled D-Shaped Fiber Cavity

PubMed Central

Zhang, Hui; Gao, Shecheng; Luo, Yunhan; Xiong, Songsong; Wan, Lei; Huang, Xincheng; Huang, Bingsen; Feng, Yuanhua; He, Miao; Liu, Weiping; Chen, Zhe; Li, Zhaohui

2018-01-01

A liquid-filled D-shaped fiber (DF) cavity serving as an in-fiber Mach–Zehnder interferometer (MZI) has been proposed and experimentally demonstrated for temperature sensing with ultrahigh sensitivity. The miniature MZI is constructed by splicing a segment of DF between two single-mode fibers (SMFs) to form a microcavity (MC) for filling and replacement of various refractive index (RI) liquids. By adjusting the effective RI difference between the DF and MC (the two interference arms), experimental and calculated results indicate that the interference spectra show different degrees of temperature dependence. As the effective RI of the liquid-filled MC approaches that of the DF, temperature sensitivity up to −84.72 nm/°C with a linear correlation coefficient of 0.9953 has been experimentally achieved for a device with the MC length of 456 μm, filled with liquid RI of 1.482. Apart from ultrahigh sensitivity, the proposed MCMZI device possesses additional advantages of its miniature size and simple configuration; these features make it promising and competitive in various temperature sensing applications, such as consumer electronics, biological treatments, and medical diagnosis. PMID:29673220

Flexible Ferroelectric Sensors with Ultrahigh Pressure Sensitivity and Linear Response over Exceptionally Broad Pressure Range.

PubMed

Lee, Youngoh; Park, Jonghwa; Cho, Soowon; Shin, Young-Eun; Lee, Hochan; Kim, Jinyoung; Myoung, Jinyoung; Cho, Seungse; Kang, Saewon; Baig, Chunggi; Ko, Hyunhyub

2018-04-24

Flexible pressure sensors with a high sensitivity over a broad linear range can simplify wearable sensing systems without additional signal processing for the linear output, enabling device miniaturization and low power consumption. Here, we demonstrate a flexible ferroelectric sensor with ultrahigh pressure sensitivity and linear response over an exceptionally broad pressure range based on the material and structural design of ferroelectric composites with a multilayer interlocked microdome geometry. Due to the stress concentration between interlocked microdome arrays and increased contact area in the multilayer design, the flexible ferroelectric sensors could perceive static/dynamic pressure with high sensitivity (47.7 kPa -1 , 1.3 Pa minimum detection). In addition, efficient stress distribution between stacked multilayers enables linear sensing over exceptionally broad pressure range (0.0013-353 kPa) with fast response time (20 ms) and high reliability over 5000 repetitive cycles even at an extremely high pressure of 272 kPa. Our sensor can be used to monitor diverse stimuli from a low to a high pressure range including weak gas flow, acoustic sound, wrist pulse pressure, respiration, and foot pressure with a single device.

CMOS Image Sensors for High Speed Applications.

PubMed

El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

2009-01-01

Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

NAEB TECHNICAL REPORT ON THE IMPACT OF AIRBORNE TELEVISION TRANSMISSION ON LAND-BASED UHF TELEVISION ASSIGNMENT PLANS.

ERIC Educational Resources Information Center

BRONSON, VERNON; AND OTHERS

OPERATIONAL EFFECTS OF AIRBORNE EDUCATIONAL TELEVISION ON ULTRAHIGH FREQUENCY (UHF) TELEVISION ASSIGNMENTS ON LAND WERE INVESTIGATED. SPECIFICALLY, THE EFFORT RELATED TO EXPANSION PLANS OF THE MIDWEST PROGRAM ON AIRBORNE TELEVISION INSTRUCTION (MPATI). PREVIOUS STUDIES BY THE NATIONAL ASSOCIATION OF EDUCATIONAL BROADCASTERS (NAEB) LED TO THE…

The Mechanisms and Value of Competition for Major Weapon Systems

DTIC Science & Technology

2011-04-01

technology. MUOS is intended to replace the Ultra-High Frequency Follow-On system ( UFO ), which was fielded between 1993 and 2003. Launch of the first......performance on the UFO system was considered an outstanding success. Based on rather limited evidence, Scearce concludes that Boeing’s bid for MUOS was based

Fighting in a Contested Space Environment: Training Marines for Operations with Degraded or Denied Space-Enabled Capabilities

DTIC Science & Technology

2015-06-01

System UFG Ulchi Freedom Guardian UFO UHF Follow-On System UHF Ultra-High Frequency URE User Range Error VTC Video Teleconference WGS Wideband...in the UHF band; two legacy systems, Fleet Satellite Communication System (FLTSATCOM) and UHF Follow-on ( UFO ), and the new constellation being

Space Operations

DTIC Science & Technology

2009-01-06

enabling precise blue force tracking (BFT), enhancing joint force situational awareness, maneuverability, and command and control (C2... spacecraft , transmits the status of those systems to the control segment on the ground, and receives and processes instructions from the control segment...missions include the tracking , telemetry, and control operations of: (1) Ultrahigh frequency (UHF) follow-on satellite system and fleet

High-speed tunable microwave photonic notch filter based on phase modulator incorporated Lyot filter.

PubMed

Ge, Jia; Feng, Hanlin; Scott, Guy; Fok, Mable P

2015-01-01

A high-speed tunable microwave photonic notch filter with ultrahigh rejection ratio is presented, which is achieved by semiconductor optical amplifier (SOA)-based single-sideband modulation and optical spectral filtering with a phase modulator-incorporated Lyot (PM-Lyot) filter. By varying the birefringence of the phase modulator through electro-optic effect, electrically tuning of the microwave photonic notch filter is experimentally achieved at tens of gigahertz speed. The use of SOA-polarizer based single-sideband modulation scheme provides good sideband suppression over a wide frequency range, resulting in an ultrahigh rejection ratio of the microwave photonic notch filter. Stable filter spectrum with bandstop rejection ratio over 60 dB is observed over a frequency tuning range from 1.8 to 10 GHz. Compare with standard interferometric notch filter, narrower bandwidth and sharper notch profile are achieved with the unique PM-Lyot filter, resulting in better filter selectivity. Moreover, bandwidth tuning is also achieved through polarization adjustment inside the PM-Lyot filter, that the 10-dB filter bandwidth is tuned from 0.81 to 1.85 GHz.

Development of paper-based wireless communication modules for point-of-care diagnostic applications

NASA Astrophysics Data System (ADS)

Smith, Suzanne; Bezuidenhout, Petroné H.; Land, Kevin; Korvink, Jan G.; Mager, Dario

2016-02-01

We present an ultra-high frequency radio frequency identification based wireless communication set-up for paper-based point-of-care diagnostic applications, based on a sensing radio frequency identification chip. Paper provides a low-cost, disposable platform for ease of fluidic handling without bulky instrumentation, and is thus ideally suited for point-ofcare applications; however, result communication - a crucial aspect for healthcare to be implemented effectively - is still lacking. Printing of radio frequency identification antennas and electronic circuitry for sensing on paper are presented, with read out of the results using a radio frequency identification reader illustrated, demonstrating the feasibility of developing integrated, all-printed solutions for point-of-care diagnosis in resource-limited settings.

FinFET-based Miller encoder for UHF and SHF RFID application

NASA Astrophysics Data System (ADS)

Srinivasulu, Avireni; Sravanthi, G.; Sarada, M.; Pal, Dipankar

2018-01-01

This paper proposes a T-flip-flop and a Miller encoder design for ultra-high frequency and super high frequency, radio-frequency identification (RFID) application using FinFETs. Miller encoder is used in magnetic recording, in optical domain and also in RFID. Performance of the proposed circuit was examined by installing the model parameters of 20-nm FinFET (obtained from open source) on Cadence platform with +0.4 V supply rail at frequencies of 1, 2 and 10 GHz. Simulation results have confirmed that proposed Miller encoder offers a simpler design with reduced transistor count and gives lower power dissipation, higher frequency range of operation at lower supply rail as compared to other candidate designs. Proposed design also promises less propagation delay.

Spectrally narrow, long-term stable optical frequency reference based on a Eu3+:Y2SiO5 crystal at cryogenic temperature.

PubMed

Chen, Qun-Feng; Troshyn, Andrei; Ernsting, Ingo; Kayser, Steffen; Vasilyev, Sergey; Nevsky, Alexander; Schiller, Stephan

2011-11-25

Using an ultrastable continuous-wave laser at 580 nm we performed spectral hole burning of Eu(3+):Y(2)SiO(5) at a very high spectral resolution. The essential parameters determining the usefulness as a macroscopic frequency reference, linewidth, temperature sensitivity, and long-term stability, were characterized using a H-maser stabilized frequency comb. Spectral holes with a linewidth as low as 6 kHz were observed and the upper limit of the drift of the hole frequency was determined to be 5±3 mHz/s. We discuss the necessary requirements for achieving ultrahigh stability in laser frequency stabilization to these spectral holes.

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Experimental characterization and modelling of non-linear coupling of the lower hybrid current drive power on Tore Supra

NASA Astrophysics Data System (ADS)

Preynas, M.; Goniche, M.; Hillairet, J.; Litaudon, X.; Ekedahl, A.; Colas, L.

2013-01-01

To achieve steady-state operation on future fusion devices, in particular on ITER, the coupling of the lower hybrid wave must be optimized on a wide range of edge conditions. However, under some specific conditions, deleterious effects on the lower hybrid current drive (LHCD) coupling are sometimes observed on Tore Supra. In this way, dedicated LHCD experiments have been performed using the LHCD system of Tore Supra, composed of two different conceptual designs of launcher: the fully active multi-junction (FAM) and the new passive active multi-junction (PAM) antennas. A non-linear interaction between the electron density and the electric field has been characterized in a thin plasma layer in front of the two LHCD antennas. The resulting dependence of the power reflection coefficient (RC) with the LHCD power is not predicted by the standard linear theory of the LH wave coupling. A theoretical model is suggested to describe the non-linear wave-plasma interaction induced by the ponderomotive effect and implemented in a new full wave LHCD code, PICCOLO-2D (ponderomotive effect in a coupling code of lower hybrid wave-2D). The code self-consistently treats the wave propagation in the antenna vicinity and its interaction with the local edge plasma density. The simulation reproduces very well the occurrence of a non-linear behaviour in the coupling observed in the LHCD experiments. The important differences and trends between the FAM and the PAM antennas, especially a larger increase in RC for the FAM, are also reproduced by the PICCOLO-2D simulation. The working hypothesis of the contribution of the ponderomotive effect in the non-linear observations of LHCD coupling is therefore validated through this comprehensive modelling for the first time on the FAM and PAM antennas on Tore Supra.

Investigation of carrier escape and recombination dynamics in GaAsN/GaAs superlattice and resonantly coupled quantum well solar cells

NASA Astrophysics Data System (ADS)

Kharel, Khim; Freundlich, Alexandre

2018-02-01

III-V multijunction devices that incorporate a dilute nitride 1-1.2 eV bottom cell have already demonstrated conversion efficiencies of about 44% under high sunlight concentration (942 Suns). However, the poor minority carrier properties of dilute nitride have, thus far, prevented the full realization of the practical potential for tandem configuration (>40% 1 sun, and >50% at 500X and above). To overcome this shortcoming, our group, over the past years, have focused on dilute nitride-based devices where the degraded minority carrier diffusion length has a minimal impact on the device performance. We have shown that the incorporation of resonantly coupled GaAsN/GaP multi-quantum wells in the intrinsic region of p-i-n GaAs cells allows both a significant sub-GaAs-bandgap photon harvesting while maintaining a high open circuit voltage. Here, in order to gain a better understanding of photo-generated carrier escape and recombination mechanisms in these devices and further optimize the performance, we examine optical and electrical properties of such devices using various characterization techniques such as: photoluminescence (PL), modulated photo-reflectance (PR), photo-current (PC) as well as current-voltage (IV) measurements under dark or illuminated conditions. The temperature dependent analysis enables us to modulate and freezes carrier thermalization phenomena, while simultaneous measurement of photogenerated carrier extraction (SR) and recombination's (PL) as a function of the applied load (bias) enables a close correlation between the evolution of I-V characteristics and the physics at play. Next, typical temperature and bias dependent activation energies reveal interesting details about carrier escape, intra-cells coupling and recombination sequences.

Continuous Beam Steering From a Segmented Liquid Crystal Optical Phased Array

NASA Technical Reports Server (NTRS)

Titus, Charles M.; Pouch, John; Nguyen, Hung; Miranda, Felix; Bos, Philip J.

2002-01-01

Optical communications to and from deep space probes will require beams possessing divergence on the order of a microradian, and must be steered with sub-microradian precision. Segmented liquid crystal spatial phase modulators, a type of optical phased array, are considered for this ultra-high resolution beam steering. It is shown here that in an ideal device of this type, there are ultimately no restrictions on the angular resolution. Computer simulations are used to obtain that result, and to analyze the influence of beam truncation and substrate flatness on the performance of this type of device.

Continuous Beam Steering From A Segmented Liquid Crystal Optical Phased Array

NASA Technical Reports Server (NTRS)

Pouch, John; Nguyen, Hung; Miranda, Felix; Titus, Charles M.; Bos, Philip J.

2002-01-01

Optical communications to and from deep space probes will require beams possessing divergence on the order of a microradian, and must be steered with sub-microradian precision. Segmented liquid crystal spatial phase modulators, a type of optical phased array, are considered for this ultra-high resolution beam steering. It is shown here that in an ideal device of this type, there are ultimately no restrictions on the angular resolution. Computer simulations are used to obtain that result, and to analyze the influence of beam truncation and substrate flatness on the performance of this type of device.

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids

NASA Astrophysics Data System (ADS)

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R.; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H.; Sarkar, Amrita; García de Arquer, F. Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O.; Stefik, Morgan; Amassian, Aram; Sargent, Edward H.

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon3. Advances in surface passivation2,4-7, combined with advances in device structures8, have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 20169. Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to 300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9-11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses ( 600 nm) and record values of JSC (32 mA cm-2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

Pseudomonas aeruginosa Infectious Keratitis in a High Oxygen Transmissible Rigid Contact Lens Rabbit Model

PubMed Central

Wei, Cynthia; Zhu, Meifang; Petroll, W. Matthew; Robertson, Danielle M.

2014-01-01

Purpose. To establish a rabbit model of infectious Pseudomonas aeruginosa keratitis using ultrahigh oxygen transmissible rigid lenses and characterize the frequency and severity of infection when compared to a non–oxygen transmissible lens material. Methods. Rabbits were fit with rigid lenses composed of ultrahigh and non–oxygen transmissible materials. Prior to wear, lenses were inoculated with an invasive corneal isolate of P. aeruginosa stably conjugated to green fluorescent protein (GFP). Corneas were examined before and after lens wear using a modified Heidelberg Rostock Tomograph in vivo confocal microscope. Viable bacteria adherent to unworn and worn lenses were assessed by standard plate counts. The presence of P. aeruginosa-GFP and myeloperoxidase-labeled neutrophils in infected corneal tissue was evaluated using laser scanning confocal microscopy. Results. The frequency and severity of infectious keratitis was significantly greater with inoculated ultrahigh oxygen transmissible lenses. Infection severity was associated with increasing neutrophil infiltration and in severe cases, corneal melting. In vivo confocal microscopic analysis of control corneas following lens wear confirmed that hypoxic lens wear was associated with mechanical surface damage, whereas no ocular surface damage was evident in the high-oxygen lens group. Conclusions. These data indicate that in the absence of adequate tear clearance, the presence of P. aeruginosa trapped under the lens overrides the protective effects of oxygen on surface epithelial cells. These findings also suggest that alternative pathophysiological mechanisms exist whereby changes under the lens in the absence of frank hypoxic damage result in P. aeruginosa infection in the otherwise healthy corneal epithelium. PMID:25125601

[The ultrastructure of Sertoli cells and spermatogonia in the rats exposed to radiation under conditions of therapeutic and prophylactic application of low-intensity electromagnetic emission].

PubMed

Korolev, Y N; Bobrovnitskii, I P; Geniatulina, M S; Nikulina, L A; Mikhailik, L V

2018-04-09

it has been demonstrated in various experimental studies that radiation exposure produces a negative impact on the processes of spermatogenesis associated with the disturbances of the microcirculation processes in the testes and the development of cellular and intracellular disintegration expressed as destructive changes in the cells leading to their death. The objective of the present study was to detect the ultrastructural abnormalities in the cells of Sertoli and spermatogonia under conditions of their exposure to radiation and to identify the peculiarities of their regeneration under the influence of the therapeutic and prophylactic application of low-intensity ultra-high frequency (UHF) electromagnetic radiation (EMR) and low-intensity low-frequency magnetic field (MF). The experiments were carried out on 28 non-pedigree mature male rats with the body weight 180-220 g that were divided into four groups. The first study group was comprised of the animals exposed to radiation followed by the application of low-intensity ultra-high frequency UHF electromagnetic radiation EMR. The rats in the second study group experienced effects of radiation and low-intensity low-frequency MF. The animals of the third (control) group were exposed to radiation alone, and those comprising the fourth group 1 (only radiation exposure) were considered to be intact. The studies with the use of electron microscopy showed that the therapeutic and prophylactic application of low-intensity ultra-high frequency (UHF) electromagnetic radiation and low-intensity low-frequency magnetic field caused the decrease in the number and the severity of post-radiation defects in the treated cells together with the increase of the number and size of mitochondria as well as hyperplasia of ribosomes; moreover, it promoted cellular and intracellular regeneration. UHF electromagnetic radiation had a more pronounced stimulating effect on the regeneration processes as compared with low-frequency MF. Particularly active processes of intracellular regeneration evolved in Sertoli cells; they were manifested as the increase in the number and size of mitochondria, enhanced hyperplasia of ribosomes, and formation of polysomes and new membranes of the granular endoplasmic reticulum. In spermatogonia, intracellular regeneration was less pronounced than in the Sertoli cells but was accompanied by enhanced cell regeneration and a greater number of reserve stem/progenitor cells. The results of the present study provide a rationale for the possibility of the application of a low-frequency magnetic field and especially UHF electromagnetic radiation for the further development of the promising therapeutic and preventive technologies with a view to their introduction into routine clinical practice dealing with radiation-induced pathology.

Topology-optimized metasurfaces: impact of initial geometric layout.

PubMed

Yang, Jianji; Fan, Jonathan A

2017-08-15

Topology optimization is a powerful iterative inverse design technique in metasurface engineering and can transform an initial layout into a high-performance device. With this method, devices are optimized within a local design phase space, making the identification of suitable initial geometries essential. In this Letter, we examine the impact of initial geometric layout on the performance of large-angle (75 deg) topology-optimized metagrating deflectors. We find that when conventional metasurface designs based on dielectric nanoposts are used as initial layouts for topology optimization, the final devices have efficiencies around 65%. In contrast, when random initial layouts are used, the final devices have ultra-high efficiencies that can reach 94%. Our numerical experiments suggest that device topologies based on conventional metasurface designs may not be suitable to produce ultra-high-efficiency, large-angle metasurfaces. Rather, initial geometric layouts with non-trivial topologies and shapes are required.

NREL/Boeing Spectrolab Team Wins Research and Development Award | News |

Science.gov Websites

approach represents a powerful new technology for designing super-efficient multi-junction solar cells. The results in superior electrical performance. But, with the HEMM approach, the atoms are unevenly spaced

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Electro-architected porous platinum on metallic multijunction nanolayers to optimize their optical properties for infrared sensor application

NASA Astrophysics Data System (ADS)

Stanca, Sarmiza Elena; Hänschke, Frank; Zieger, Gabriel; Dellith, Jan; Dellith, Andrea; Ihring, Andreas; Belkner, Johannes; Meyer, Hans-Georg

2018-03-01

Tailoring the physicochemical properties of the metallic multijunction nanolayers is a prerequisite for the development of microelectronics. From this perspective, a desired lower reflectance of infrared radiation was achieved by an electrochemical deposition of porous platinum in nonaqueous media on silver mirror supported nickel-chrome and nickel-titanium metallic films with incremental decreasing thicknesses from 80-10 nm. The electro-assembled architectures were examined by means of scanning electron microscopy and Fourier transform infrared spectroscopy and it was observed that the layer and sublayer thicknesses and resistivities have a substantial effect upon the porous platinum morphology and its optical properties. It is here reported that the augmentation of the metallic layer electrical conductivity determines the electroformation of more compact platinum nanolayers. Moreover, the platinum black coating of metallic nanolayers causes a considerable decrease of the reflectance in the region from 1000-8000 cm-1.

Effect of the electric field pattern on the generation of fast electrons in front of lower hybrid launchers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valade, Laurent, E-mail: laurent.valade@cea.fr; Ekedahl, Annika; Colas, Laurent

2015-12-10

The effect of the detailed waveguide spectrum on the electron acceleration has been studied for the 3.7 GHz LHCD launchers in Tore Supra, i.e. the ITER-like passive-active multijunction (PAM) launcher and the fully-active-multijunction (FAM) launcher, using test electron modelling technique. The detailed launched antenna wave spectrum is used as input to the code that computes the dynamics of the electrons in the electric field. Comparison with the LHCD launchers in EAST, operating at 2.45 GHz and 4.6 GHz, has also been made. The simulations show that the PAM-design generates lower flux of fast electrons than FAM-launchers, this could be themore » consequence of the wider waveguide of PAM-launcher (14.65 mm for Tore-Supra) than FAM-launcher (8 mm for Tore-Supra)« less

Effect of the cadmium chloride treatment on RF sputtered Cd{sub 0.6}Zn{sub 0.4}Te films for application in multijunction solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimpi, Tushar M., E-mail: mechanical.tushar@gmail.com; Kephart, Jason M.; Swanson, Drew E.

Single phase Cd{sub 0.6}Zn{sub 0.4}Te (CdZnTe) films of 1 μm thickness were deposited by radio frequency planar magnetron sputter deposition on commercial soda lime glass samples coated with fluorine-doped tin oxide and cadmium sulphide (CdS). The stack was then treated with cadmium chloride (CdCl{sub 2}) at different temperatures using a constant treatment time. The effect of the CdCl{sub 2} treatment was studied using optical, materials, and electrical characterization of the samples and compared with the as-deposited CdZnTe film with the same stack configuration. The band gap deduced from Tauc plots on the as-deposited CdZnTe thin film was 1.72 eV. The depositedmore » film had good crystalline quality with a preferred orientation along the {111} plane. After the CdCl{sub 2} treatment, the absorption edge shifted toward longer wavelength region and new peaks corresponding to cadmium telluride (CdTe) emerged in the x-ray diffraction pattern. This suggested loss of zinc after the CdCl{sub 2} treatment. The cross sectional transmission electron microscope images of the sample treated at 400 °C and the energy dispersive elemental maps revealed the absence of chlorine along the grain boundaries of CdZnTe and residual CdTe. The presence of chlorine in the CdTe devices plays a vital role in drastically improving the device performance which was not observed in CdZnTe samples treated with CdCl{sub 2}. The loss of zinc from the surface and incomplete recrystallization of the grains together with the presence of high densities of stacking faults were observed. The surface images using scanning electron microscopy showed that the morphology of the grains changed from small spherical shape to large grains formed due to the fusion of small grains with distinct grain boundaries visible at the higher CdCl{sub 2} treatment temperatures. The absence of chlorine along the grain boundaries, incomplete recrystallization and distinct grain boundaries is understood to cause the poor performance of the fabricated devices.« less

Demonstration of ultra-high recyclable energy densities in domain-engineered ferroelectric films.

PubMed

Cheng, Hongbo; Ouyang, Jun; Zhang, Yun-Xiang; Ascienzo, David; Li, Yao; Zhao, Yu-Yao; Ren, Yuhang

2017-12-08

Dielectric capacitors have the highest charge/discharge speed among all electrical energy devices, but lag behind in energy density. Here we report dielectric ultracapacitors based on ferroelectric films of Ba(Zr 0.2 ,Ti 0.8 )O 3 which display high-energy densities (up to 166 J cm -3 ) and efficiencies (up to 96%). Different from a typical ferroelectric whose electric polarization is easily saturated, these Ba(Zr 0.2 ,Ti 0.8 )O 3 films display a much delayed saturation of the electric polarization, which increases continuously from nearly zero at remnant in a multipolar state, to a large value under the maximum electric field, leading to drastically improved recyclable energy densities. This is achieved by the creation of an adaptive nano-domain structure in these perovskite films via phase engineering and strain tuning. The lead-free Ba(Zr 0.2 ,Ti 0.8 )O 3 films also show excellent dielectric and energy storage performance over a broad frequency and temperature range. These findings may enable broader applications of dielectric capacitors in energy storage, conditioning, and conversion.

Simulation of the light emission properties of patterned metal-based nanostructures for ultra-high density optical storage

NASA Astrophysics Data System (ADS)

Li, Weijun; Zhu, Yaping; Luo, Jun; Peng, Sha; Lei, Yu; Tong, Qing; Zhang, Xinyu; Xie, Changsheng

2015-10-01

Current researches show that the surface plasmon-polariton modes (SPPMs) in metallic nanostructures can lead to a powerful localization of guided light signals, which is generally as small as a few nanometers and thus far beyond the diffraction limit of electromagnetic waves in dielectric media. In this paper, our attention is paid to the modeling and simulation of particular kinds of patterned metal-based nanostructure fabricated over several common wafers such as typical silicon dioxide. The nanostructures are designed for concentrating and delivering incident light energy into nanoscale regions. In our research, the factors, for instance, optical materials, patterned nano-structures, the distance arrangement between adjacent single nanopattern, and the frequency of incident electromagnetic wave, are taken as variables, and further the CST microwave studio is used to simulate optical behaviors of the devices developed by us. By comparing the transmittance and electric field intensity distribution in small area, the nano-light-emission effects are analyzed, and the conditions for obtaining near-field nanospots have been chosen.

Fabrication and characterization of an ultrasensitive acousto-optical cantilever

NASA Astrophysics Data System (ADS)

Sievilä, P.; Rytkönen, V.-P.; Hahtela, O.; Chekurov, N.; Kauppinen, J.; Tittonen, I.

2007-05-01

A cantilever-type silicon device for sensing changes in pressure has been designed, fabricated and characterized. The microfabrication process is based on two-sided etching of silicon-on insulator (SOI) wafers. The rectangular cantilevers are 9.5 µm thick, and cover an area of a few square millimeters. The cantilevers are surrounded by thick and tight frames, since on the three free sides there are only narrow, micrometer sized air gaps between the cantilever and the frame. This design and excellent mechanical properties of single crystal silicon enable sensitive detection of time-dependent gas pressure variations, i.e. acoustic waves. The mechanical properties of the cantilever have been characterized by analyzing its dynamic behavior. The resonance frequency and the mechanical vibrational mode patterns have been determined using finite-element method (FEM) simulations and laser interferometry. These results are found to be in good agreement with each other. Initially this mechanical door-like cantilever was designed to be used in ultra-high sensitivity photoacoustic gas sensing, but it can also be applied quite generally in various kinds of sound wave detection schemes.

Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

PubMed

Wu, Menghao; Dong, Shuai; Yao, Kailun; Liu, Junming; Zeng, Xiao Cheng

2016-11-09

Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS 2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

A Novel Phase-Transformation Activation Process toward Ni-Mn-O Nanoprism Arrays for 2.4 V Ultrahigh-Voltage Aqueous Supercapacitors.

PubMed

Zuo, Wenhua; Xie, Chaoyue; Xu, Pan; Li, Yuanyuan; Liu, Jinping

2017-09-01

One of the key challenges of aqueous supercapacitors is the relatively low voltage (0.8-2.0 V), which significantly limits the energy density and feasibility of practical applications of the device. Herein, this study reports a novel Ni-Mn-O solid-solution cathode to widen the supercapacitor device voltage, which can potentially suppress the oxygen evolution reaction and thus be operated stably within a quite wide potential window of 0-1.4 V (vs saturated calomel electrode) after a simple but unique phase-transformation electrochemical activation. The solid-solution structure is designed with an ordered array architecture and in situ nanocarbon modification to promote the charge/mass transfer kinetics. By paring with commercial activated carbon anode, an ultrahigh voltage asymmetric supercapacitor in neutral aqueous LiCl electrolyte is assembled (2.4 V; among the highest for single-cell supercapacitors). Moreover, by using a polyvinyl alcohol (PVA)-LiCl electrolyte, a 2.4 V hydrogel supercapacitor is further developed with an excellent Coulombic efficiency, good rate capability, and remarkable cycle life (>5000 cycles; 95.5% capacity retention). Only one cell can power the light-emitting diode indicator brightly. The resulting maximum volumetric energy density is 4.72 mWh cm -3 , which is much superior to previous thin-film manganese-oxide-based supercapacitors and even battery-supercapacitor hybrid devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energy and lighting

NASA Astrophysics Data System (ADS)

Berman, Samuel

1985-11-01

Advances in research for new types of lighting with increased efficacies (lumens/watt) are discussed in the following areas: (1) high-frequency, solid-state ballasts, (2) isotopic enhancement of mercury isotopes, (3) magnetic augmentation, (4) electrodeless, ultra-high frequency, (5) tuned phosphors, (6) two-photon phosphors, (7) heat mirrors, and (8) advanced control circuits to take advantage of daylight and occupancy. As of 1985, improvements in efficacy have been accomplished on an economic basis to save energy for (1) high frequency ballasts (25%), (2) isotopic enhancement (5%), and (8) advanced control circuits (up to 50%). Most of these advances depend on a deeper understanding of the weakly ionized plasma as a radiating and diffusing medium.

Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air.

PubMed

Beyer, Hannes; Wagner, Tino; Stemmer, Andreas

2016-01-01

Frequency-modulation atomic force microscopy has turned into a well-established method to obtain atomic resolution on flat surfaces, but is often limited to ultra-high vacuum conditions and cryogenic temperatures. Measurements under ambient conditions are influenced by variations of the dew point and thin water layers present on practically every surface, complicating stable imaging with high resolution. We demonstrate high-resolution imaging in air using a length-extension resonator operating at small amplitudes. An additional slow feedback compensates for changes in the free resonance frequency, allowing stable imaging over a long period of time with changing environmental conditions.

A Three Degrees of Freedom Test-Bed for Nanosatellite and CubeSat Attitude Dynamics, Determination, and Control

DTIC Science & Technology

2009-12-01

Tactical Imaging Nano-sat Yielding Small-Cost Operations and Persistent Earth-coverage UFO UHF Follow On UHF Ultra-High Frequency USCG United...replaced by UHF Follow On ( UFO ) satellites in the 1990s. The UFO satellites are being updated and scheduled for replacement by the Mobile User

[Interaction of oxytocin, laser and electromagnetic radiation on the persistence properties of Staphylococcus aureus].

PubMed

Kurlaev, P P; Chernova, O L; Kirgizova, S B

2000-01-01

The suppressive action of oxytocin, heliumneon radiation and ultrahigh-frequency electromagnetic waves (UHF-therapy) on the persistence properties of S. aureus has been experimentally established. The effectiveness of the therapeutic actions under study in the treatment of patients with the prognosticated unfavorable course of purulent inflammatory diseases of soft tissues has been shown.

High bandwidth on-chip capacitive tuning of microtoroid resonators

NASA Astrophysics Data System (ADS)

Baker, Christopher G.; Bekker, Christiaan; McAuslan, David L.; Sheridan, Eoin; Bowen, Warwick P.

2016-09-01

We report on the design, fabrication and characterization of silica microtoroid based cavity opto-electromechanical systems (COEMS). Electrodes patterned onto the microtoroid resonators allow for rapid capacitive tuning of the optical whispering gallery mode resonances while maintaining their ultrahigh quality factor, enabling applications such as efficient radio to optical frequency conversion, optical routing and switching applications.

A Systematic Software, Firmware, and Hardware Codesign Methodology for Digital Signal Processing

DTIC Science & Technology

2014-03-01

possible mappings ...................................................60 Table 25. Possible optimal leaf -nodes... size weight and power UAV unmanned aerial vehicle UHF ultra-high frequency UML universal modeling language Verilog verify logic VHDL VHSIC...optimal leaf -nodes to some design patterns for embedded system design. Software and hardware partitioning is a very difficult challenge in the field of

15.3%-Efficient GaAsP Solar Cells on GaP/Si Templates

DOE PAGES

Vaisman, Michelle; Fan, Shizhao; Nay Yaung, Kevin; ...

2017-07-26

As single-junction Si solar cells approach their practical efficiency limits, a new pathway is necessary to increase efficiency in order to realize more cost-effective photovoltaics. Integrating III-V cells onto Si in a multijunction architecture is a promising approach that can achieve high efficiency while leveraging the infrastructure already in place for Si and III-V technology. In this Letter, we demonstrate a record 15.3%-efficient 1.7 eV GaAsP top cell on GaP/Si, enabled by recent advances in material quality in conjunction with an improved device design and a high-performance antireflection coating. Furthermore, we present a separate Si bottom cell with a 1.7more » eV GaAsP optical filter to absorb most of the visible light with an efficiency of 6.3%, showing the feasibility of monolithic III-V/Si tandems with >20% efficiency. Through spectral efficiency analysis, we also compare our results to previously published GaAsP and Si devices, projecting tandem GaAsP/Si efficiencies of up to 25.6% based on current state-of-the-art individual subcells. With the aid of modeling, we further illustrate a realistic path toward 30% GaAsP/Si tandems for high-efficiency, monolithically integrated photovoltaics.« less

Progress in a-SiOx:H thin film solar cells with patterned MgF2 dielectric for top cell of multi-junction system

NASA Astrophysics Data System (ADS)

Kang, Dong-Won; Sichanugrist, Porponth; Konagai, Makoto

2016-07-01

We successfully designed and experimentally demonstrated an application of patterned MgF2 dielectric material at rear Al-doped ZnO (AZO)/Ag interface in thin film amorphous silicon oxide ( a-SiOx:H) solar cells. When it was realized in practical device process, MgF2 coverage with patterned morphology was employed to allow for current flow between the AZO and Ag against highly resistive MgF2 material. On the basis of the suggested structure, we found an improvement in quantum efficiency of the solar cells with the patterned MgF2. In addition, an enhancement of open circuit voltage ( V oc ) and fill factor ( FF) was observed. A remarkable increase in shunt resistance of the cells with the MgF2 would possibly indicate that the highly resistive MgF2 layer can partly suppress physical shunting across top and bottom electrodes caused by very thin absorber thickness of only 100 nm. The approach showed that our best-performing device revealed an essential improvement in conversion efficiency from 7.83 to 8.01% with achieving markedly high V oc (1.013 V) and FF (0.729). [Figure not available: see fulltext.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Identification of vibrational signatures from short chains of interlinked molecule-nanoparticle junctions obtained by inelastic electron tunnelling spectroscopy.

PubMed

Jafri, S H M; Löfås, H; Fransson, J; Blom, T; Grigoriev, A; Wallner, A; Ahuja, R; Ottosson, H; Leifer, K

2013-06-07

Short chains containing a series of metal-molecule-nanoparticle nanojunctions are a nano-material system with the potential to give electrical signatures close to those from single molecule experiments while enabling us to build portable devices on a chip. Inelastic electron tunnelling spectroscopy (IETS) measurements provide one of the most characteristic electrical signals of single and few molecules. In interlinked molecule-nanoparticle (NP) chains containing typically 5-7 molecules in a chain, the spectrum is expected to be a superposition of the vibrational signatures of individual molecules. We have established a stable and reproducible molecule-AuNP multi-junction by placing a few 1,8-octanedithiol (ODT) molecules onto a versatile and portable nanoparticle-nanoelectrode platform and measured for the first time vibrational molecular signatures at complex and coupled few-molecule-NP junctions. From quantum transport calculations, we model the IETS spectra and identify vibrational modes as well as the number of molecules contributing to the electron transport in the measured spectra.

Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

PubMed Central

Sanehira, Erin M.; Marshall, Ashley R.; Christians, Jeffrey A.; Harvey, Steven P.; Ciesielski, Peter N.; Wheeler, Lance M.; Schulz, Philip; Lin, Lih Y.; Beard, Matthew C.; Luther, Joseph M.

2017-01-01

We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages (VOC’s) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small VOC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%. PMID:29098184

Photovoltaic and photoelectrochemical conversion of solar energy.

PubMed

Grätzel, Michael

2007-04-15

The Sun provides approximately 100,000 terawatts to the Earth which is about 10000 times more than the present rate of the world's present energy consumption. Photovoltaic cells are being increasingly used to tap into this huge resource and will play a key role in future sustainable energy systems. So far, solid-state junction devices, usually made of silicon, crystalline or amorphous, and profiting from the experience and material availability resulting from the semiconductor industry, have dominated photovoltaic solar energy converters. These systems have by now attained a mature state serving a rapidly growing market, expected to rise to 300 GW by 2030. However, the cost of photovoltaic electricity production is still too high to be competitive with nuclear or fossil energy. Thin film photovoltaic cells made of CuInSe or CdTe are being increasingly employed along with amorphous silicon. The recently discovered cells based on mesoscopic inorganic or organic semiconductors commonly referred to as 'bulk' junctions due to their three-dimensional structure are very attractive alternatives which offer the prospect of very low cost fabrication. The prototype of this family of devices is the dye-sensitized solar cell (DSC), which accomplishes the optical absorption and the charge separation processes by the association of a sensitizer as light-absorbing material with a wide band gap semiconductor of mesoporous or nanocrystalline morphology. Research is booming also in the area of third generation photovoltaic cells where multi-junction devices and a recent breakthrough concerning multiple carrier generation in quantum dot absorbers offer promising perspectives.

A 15-pole high temperature superconductor filter for radar applications

NASA Astrophysics Data System (ADS)

Yu, Xiao; Xi, Weibin; Wu, Songtao

2018-06-01

This paper presents a compact and high first harmonic frequency resonator. The characteristics of this resonator are theoretically analyzed. A highly selective 15-pole Chebyshev high temperature superconducting ultra-high frequency narrowband filter for radar applications was fabricated by using this resonator. The filter has a center frequency of 495 MHz and a fractional bandwidth of 1%. The first harmonic frequency is more than 3.3 times the fundamental frequency. The measured filter shows excellent selectivity, better than 85 dB/1 MHz skirt slopes, and more than 85 dB of rejection at 497.5 MHz from the band edge. The filter was fabricated on a 2 inch YBCO thin film with a 0.5 mm thick MgO substrate. The experimental results are consistent with the simulations.

[Combined application of balneotherapy to the medical rehabilitation of patients with seronegative spondyloarthrites].

PubMed

Barnatskiĭ, V V

2008-01-01

A rehabilitative complex combining radon baths and ultra-high frequency electromagnetic fields exerted a well-apparent beneficial effect on the clinical picture of articular and vertebral syndromes and greatly contributed to the correction of disturbances in the immune system of patients with seronegative spondyloarthritis. At the same time, combination of radon baths with low-frequency ultrasound treatment and hydrocortisone ultraphonophoresis reduced clinical activity of the disease, improved the patients' immune status, and had more prominent general anti-inflammatory action than the same physical factors applied as monotherapy.

Extremely Elastic Wearable Carbon Nanotube Fiber Strain Sensor for Monitoring of Human Motion.

PubMed

Ryu, Seongwoo; Lee, Phillip; Chou, Jeffrey B; Xu, Ruize; Zhao, Rong; Hart, Anastasios John; Kim, Sang-Gook

2015-06-23

The increasing demand for wearable electronic devices has made the development of highly elastic strain sensors that can monitor various physical parameters an essential factor for realizing next generation electronics. Here, we report an ultrahigh stretchable and wearable device fabricated from dry-spun carbon nanotube (CNT) fibers. Stretching the highly oriented CNT fibers grown on a flexible substrate (Ecoflex) induces a constant decrease in the conductive pathways and contact areas between nanotubes depending on the stretching distance; this enables CNT fibers to behave as highly sensitive strain sensors. Owing to its unique structure and mechanism, this device can be stretched by over 900% while retaining high sensitivity, responsiveness, and durability. Furthermore, the device with biaxially oriented CNT fiber arrays shows independent cross-sensitivity, which facilitates simultaneous measurement of strains along multiple axes. We demonstrated potential applications of the proposed device, such as strain gauge, single and multiaxial detecting motion sensors. These devices can be incorporated into various motion detecting systems where their applications are limited to their strain.

Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures

NASA Astrophysics Data System (ADS)

Ovsyannikov, Sergey V.; Shchennikov, Vladimir V.

2004-02-01

The longitudinal and transverse thermomagnetic Nernst-Ettingshausen (LNE, TNE) effects and the Maggi-Reghi-Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst-Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed.

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

NASA Astrophysics Data System (ADS)

Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-01

Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

High Electromechanical Response of Ionic Polymer Actuators with Controlled-Morphology Aligned Carbon Nanotube/Nafion Nanocomposite Electrodes

PubMed Central

Liu, Sheng; Liu, Yang; Cebeci, Hülya; de Villoria, Roberto Guzmán; Lin, Jun-Hong

2011-01-01

Recent advances in fabricating controlled-morphology vertically aligned carbon nanotubes (VA-CNTs) with ultrahigh volume fraction create unique opportunities for markedly improving the electromechanical performance of ionic polymer conductor network composite (IPCNC) actuators. Continuous paths through inter-VA-CNT channels allow fast ion transport, and high electrical conduction of the aligned CNTs in the composite electrodes lead to fast device actuation speed (>10% strain/second). One critical issue in developing advanced actuator materials is how to suppress the strain that does not contribute to the actuation (unwanted strain) thereby reducing actuation efficiency. Here our experiments demonstrate that the VA-CNTs give an anisotropic elastic response in the composite electrodes, which suppresses the unwanted strain and markedly enhances the actuation strain (>8% strain under 4 volts). The results reported here suggest pathways for optimizing the electrode morphology in IPCNCs using ultra-high volume fraction VA-CNTs to further enhanced performance. PMID:21765822

Ultrahigh Responsivity and Detectivity Graphene-Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

NASA Astrophysics Data System (ADS)

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I.

2017-04-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor.

PubMed

Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-27

Few-layer MoS 2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS 2 /Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS 2 /SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS 2 -based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ∼50% RH), with good repeatability and selectivity of the MoS 2 /SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS 2 /SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

Ultrahigh Responsivity and Detectivity Graphene–Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

PubMed Central

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I

2017-01-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W−1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450–700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices. PMID:28422117

Study of ultra-high energy emission from Cygnus X-3 and Hercules X-1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dingus, B.L.

1988-11-01

The CYGNUS experiment, consisting of an extensive air shower detector and a muon detector, was built at Los Alamos, New Mexico (latitude 36 N, longitude 107W, altitude 2310 meters), to search for point sources of ultra-high energy (>10/sup 14/ eV) particles. These particles must be long-lived neutral particles because of the long source distances and the presence of the intragalactic magnetic field. Gamma rays are the most likely candidates because of the short neutron lifetime and the small neutrino cross section. Therefore, the muon content of the source showers is examined to determine if these events are muon poor asmore » is expected for gamma-initiated showers. The data set from April 1986 to July 1987 is searched for continual emission from Cygnus X-3 and Hercules X-1, and an upper bound to flux is determined for both sources. The flux limit for Cygnus X-3, 2.0 /times/ 10/sup /minus/13/ cm/sup /minus/2/ sec/sup /minus/1/ above 50 TeV, is lower than previous ultra-high energy observations. Hercules X-1 has never been observed continually at ultra-high energies. Cygnus X-3 is observed for a shorter interval of time, beginning on 17 April 1986 and ending 1 June 1986. There is one chance in 300 that the observation is due to a random fluctuation. The signal is correlated with the 4.8 hour orbital period, and the muon content of the showers in the signal is inconsistent with the conventional prediction of gamma- initiated showers. An episodic signal is also reported for Hercules X-1, and it consists of two bursts of less than one hour duration on 24 July 1986. The probability is one chance in 12,000 that this observation is not associated with Hercules X-1. The signal is pulsed at frequency near, but significantly different from, the x-ray pulsar frequency. The muon content of the signal showers is also anomalous, assuming the showers are initiated by gamma rays. 62 refs., 60 figs.« less

Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gangopadhyay, Subhashis; Schmidt, Thomas, E-mail: tschmidt@ifp.uni-bremen.de; Kruse, Carsten

The cleaning of metal-organic vapor-phase epitaxial GaN(0001) template layers grown on sapphire has been investigated. Different procedures, performed under ultrahigh vacuum conditions, including degassing and exposure to active nitrogen from a radio frequency nitrogen plasma source have been compared. For this purpose, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy have been employed in order to assess chemical as well as structural and morphological surface properties. Initial degassing at 600 °C under ultrahigh vacuum conditions only partially eliminates the surface contaminants. In contrast to plasma assisted nitrogen cleaning at temperatures as low as 300 °C, active-nitrogen exposure at temperaturesmore » as high as 700 °C removes the majority of oxide species from the surface. However, extended high-temperature active-nitrogen cleaning leads to severe surface roughening. Optimum results regarding both the removal of surface oxides as well as the surface structural and morphological quality have been achieved for a combination of initial low-temperature plasma-assisted cleaning, followed by a rapid nitrogen plasma-assisted cleaning at high temperature.« less

Ultrahigh-speed Si-integrated on-chip laser with tailored dynamic characteristics

NASA Astrophysics Data System (ADS)

Park, Gyeong Cheol; Xue, Weiqi; Piels, Molly; Zibar, Darko; Mørk, Jesper; Semenova, Elizaveta; Chung, Il-Sug

2016-12-01

For on-chip interconnects, an ideal light source should have an ultralow energy consumption per bandwidth (operating en-ergy) as well as sufficient output power for error-free detection. Nanocavity lasers have been considered the most ideal for smaller operating energy. However, they have a challenge in obtaining a sufficient output power. Here, as an alternative, we propose an ultrahigh-speed microcavity laser structure, based on a vertical cavity with a high-contrast grating (HCG) mirror for transverse magnetic (TM) polarisation. By using the TM HCG, a very small mode volume and an un-pumped compact optical feedback structure can be realised, which together tailor the frequency response function for achieving a very high speed at low injection currents. Furthermore, light can be emitted laterally into a Si waveguide. From an 1.54-μm optically-pumped laser, a 3-dB frequency of 27 GHz was obtained at a pumping level corresponding to sub-mA. Using measured 3-dB frequen-cies and calculated equivalent currents, the modulation current efficiency factor (MCEF) is estimated to be 42.1 GHz/mA1/2, which is superior among microcavity lasers. This shows a high potential for a very high speed at low injection currents or avery small heat generation at high bitrates, which are highly desirable for both on-chip and off-chip applications.

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD.

PubMed

Sahu, B B; Yin, Y Y; Tsutsumi, T; Hori, M; Han, Jeon G

2016-05-14

Control of the plasma densities and energies of the principal plasma species is crucial to induce modification of the plasma reactivity, chemistry, and film properties. This work presents a systematic and integrated approach to the low-temperature deposition of hydrogenated amorphous silicon nitride films looking into optimization and control of the plasma processes. Radiofrequency (RF) and ultrahigh frequency (UHF) power are combined to enhance significantly the nitrogen plasma and atomic-radical density to enforce their effect on film properties. This study presents an extensive investigation of the influence of combining radiofrequency (RF) and ultrahigh frequency (UHF) power as a power ratio (PR = RF : UHF), ranging from 4 : 0 to 0 : 4, on the compositional, structural, and optical properties of the synthesized films. The data reveal that DF power with a characteristic bi-Maxwellian electron energy distribution function (EEDF) is effectively useful for enhancing the ionization and dissociation of neutrals, which in turn helps in enabling high rate deposition with better film properties than that of SF operations. Utilizing DF PECVD, a wide-bandgap of ∼3.5 eV with strong photoluminescence features can be achieved only by using a high-density plasma and high nitrogen atom density at room temperature. The present work also proposes the suitability of the DF PECVD approach for industrial applications.

Synergistic Effect of Molecular-Type Electrocatalysts with Ultrahigh Pore Volume Carbon Microspheres for Lithium-Sulfur Batteries.

PubMed

Lim, Won-Gwang; Mun, Yeongdong; Cho, Ara; Jo, Changshin; Lee, Seonggyu; Han, Jeong Woo; Lee, Jinwoo

2018-05-14

Lithium-sulfur (Li-S) batteries are regarded as potential high-energy storage devices due to their outstanding energy density. However, the low electrical conductivity of sulfur, dissolution of the active material, and sluggish reaction kinetics cause poor cycle stability and rate performance. A variety of approaches have been attempted to resolve the above issues and achieve enhanced electrochemical performance. However, inexpensive multifunctional host materials which can accommodate large quantities of sulfur and exhibit high electrode density are not widely available, which hinders the commercialization of Li-S batteries. Herein, mesoporous carbon microspheres with ultrahigh pore volume are synthesized, followed by the incorporation of Fe-N-C molecular catalysts into the mesopores, which can act as sulfur hosts. The ultrahigh pore volume of the prepared host material can accommodate up to ∼87 wt % sulfur, while the uniformly controlled spherical morphology and particle size of the carbon microspheres enable high areal/volumetric capacity with high electrode density. Furthermore, the uniform distribution of Fe-N-C (only 0.33 wt %) enhances the redox kinetics of the conversion reaction of sulfur and efficiently captures the soluble intermediates. The resulting electrode with 5.2 mg sulfur per cm 2 shows excellent cycle stability and 84% retention of the initial capacity even after 500 cycles at a 3 C rate.

Systematic Calibration for Ultra-High Accuracy Inertial Measurement Units.

PubMed

Cai, Qingzhong; Yang, Gongliu; Song, Ningfang; Liu, Yiliang

2016-06-22

An inertial navigation system (INS) has been widely used in challenging GPS environments. With the rapid development of modern physics, an atomic gyroscope will come into use in the near future with a predicted accuracy of 5 × 10(-6)°/h or better. However, existing calibration methods and devices can not satisfy the accuracy requirements of future ultra-high accuracy inertial sensors. In this paper, an improved calibration model is established by introducing gyro g-sensitivity errors, accelerometer cross-coupling errors and lever arm errors. A systematic calibration method is proposed based on a 51-state Kalman filter and smoother. Simulation results show that the proposed calibration method can realize the estimation of all the parameters using a common dual-axis turntable. Laboratory and sailing tests prove that the position accuracy in a five-day inertial navigation can be improved about 8% by the proposed calibration method. The accuracy can be improved at least 20% when the position accuracy of the atomic gyro INS can reach a level of 0.1 nautical miles/5 d. Compared with the existing calibration methods, the proposed method, with more error sources and high order small error parameters calibrated for ultra-high accuracy inertial measurement units (IMUs) using common turntables, has a great application potential in future atomic gyro INSs.

Surface-Induced Dissociation of Protein Complexes in a Hybrid Fourier Transform Ion Cyclotron Resonance Mass Spectrometer.

PubMed

Yan, Jing; Zhou, Mowei; Gilbert, Joshua D; Wolff, Jeremy J; Somogyi, Árpád; Pedder, Randall E; Quintyn, Royston S; Morrison, Lindsay J; Easterling, Michael L; Paša-Tolić, Ljiljana; Wysocki, Vicki H

2017-01-03

Mass spectrometry continues to develop as a valuable tool in the analysis of proteins and protein complexes. In protein complex mass spectrometry studies, surface-induced dissociation (SID) has been successfully applied in quadrupole time-of-flight (Q-TOF) instruments. SID provides structural information on noncovalent protein complexes that is complementary to other techniques. However, the mass resolution of Q-TOF instruments can limit the information that can be obtained for protein complexes by SID. Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) provides ultrahigh resolution and ultrahigh mass accuracy measurements. In this study, an SID device was designed and successfully installed in a hybrid FT-ICR instrument in place of the standard gas collision cell. The SID-FT-ICR platform has been tested with several protein complex systems (homooligomers, a heterooligomer, and a protein-ligand complex, ranging from 53 to 85 kDa), and the results are consistent with data previously acquired on Q-TOF platforms, matching predictions from known protein interface information. SID fragments with the same m/z but different charge states are well-resolved based on distinct spacing between adjacent isotope peaks, and the addition of metal cations and ligands can also be isotopically resolved with the ultrahigh mass resolution available in FT-ICR.

Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture.

PubMed

Zhang, Lei; Pavlica, Egon; Zhong, Xiaolan; Liscio, Fabiola; Li, Songlin; Bratina, Gvido; Orgiu, Emanuele; Samorì, Paolo

2017-03-01

Crystalline dioctyl-3,4,9,10-perylenedicarboximide nanowires and 6,13-bis(triisopropylsilylethynyl) pentacene microplates are integrated into a vertical-yet-open asymmetrical heterojunction for the realization of a high-performance organic photovoltaic detector, which shows fast photoresponse, ultrahigh signal-to-noise ratio, and high sensitivity to weak light. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Popcorn-Derived Porous Carbon Flakes with an Ultrahigh Specific Surface Area for Superior Performance Supercapacitors.

PubMed

Hou, Jianhua; Jiang, Kun; Wei, Rui; Tahir, Muhammad; Wu, Xiaoge; Shen, Ming; Wang, Xiaozhi; Cao, Chuanbao

2017-09-13

Popcorn-derived porous carbon flakes have been successfully fabricated from the biomass of maize. Utilizing the "puffing effect", the nubby maize grain turned into materials with an interconnected honeycomb-like porous structure composed of carbon flakes. The following chemical activation method enabled the as-prepared products to possess optimized porous structures for electrochemical energy-storage devices, such as multilayer flake-like structures, ultrahigh specific surface area (S BET : 3301 m 2 g -1 ), and a high content of micropores (microporous surface area of 95%, especially the optimized sub-nanopores with the size of 0.69 nm) that can increase the specific capacitance. The as-obtained sample displayed excellent specific capacitance of 286 F g -1 at 90 A g -1 for supercapacitors. Moreover, the unique porous structure demonstrated an ideal way to improve the volumetric energy density performance. A high energy density of 103 Wh kg -1 or 53 Wh L -1 has been obtained in the case of ionic liquid electrolyte, which is the highest among reported biomass-derived carbon materials and will satisfy the urgent requirements of a primary power source for electric vehicles. This work may prove to be a fast, green, and large-scale synthesis route by using the large nubby granular materials to synthesize applicable porous carbons in energy-storage devices.

A nanoporous MXene film enables flexible supercapacitors with high energy storage.

PubMed

Fan, Zhimin; Wang, Youshan; Xie, Zhimin; Xu, Xueqing; Yuan, Yin; Cheng, Zhongjun; Liu, Yuyan

2018-05-14

MXene films are attractive for use in advanced supercapacitor electrodes on account of their ultrahigh density and pseudocapacitive charge storage mechanism in sulfuric acid. However, the self-restacking of MXene nanosheets severely affects their rate capability and mass loading. Herein, a free-standing and flexible modified nanoporous MXene film is fabricated by incorporating Fe(OH)3 nanoparticles with diameters of 3-5 nm into MXene films and then dissolving the Fe(OH)3 nanoparticles, followed by low calcination at 200 °C, resulting in highly interconnected nanopore channels that promote efficient ion transport without compromising ultrahigh density. As a result, the modified nanoporous MXene film presents an attractive volumetric capacitance (1142 F cm-3 at 0.5 A g-1) and good rate capability (828 F cm-3 at 20 A g-1). Furthermore, it still displays a high volumetric capacitance of 749 F cm-3 and good flexibility even at a high mass loading of 11.2 mg cm-2. Therefore, this flexible and free-standing nanoporous MXene film is a promising electrode material for flexible, portable and compact storage devices. This study provides an efficient material design for flexible energy storage devices possessing high volumetric capacitance and good rate capability even at a high mass loading.

Ultrahigh speed en face OCT capsule for endoscopic imaging

PubMed Central

Liang, Kaicheng; Traverso, Giovanni; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Wang, Zhao; Potsaid, Benjamin; Giacomelli, Michael; Jayaraman, Vijaysekhar; Barman, Ross; Cable, Alex; Mashimo, Hiroshi; Langer, Robert; Fujimoto, James G.

2015-01-01

Depth resolved and en face OCT visualization in vivo may have important clinical applications in endoscopy. We demonstrate a high speed, two-dimensional (2D) distal scanning capsule with a micromotor for fast rotary scanning and a pneumatic actuator for precision longitudinal scanning. Longitudinal position measurement and image registration were performed by optical tracking of the pneumatic scanner. The 2D scanning device enables high resolution imaging over a small field of view and is suitable for OCT as well as other scanning microscopies. Large field of view imaging for screening or surveillance applications can also be achieved by proximally pulling back or advancing the capsule while scanning the distal high-speed micromotor. Circumferential en face OCT was demonstrated in living swine at 250 Hz frame rate and 1 MHz A-scan rate using a MEMS tunable VCSEL light source at 1300 nm. Cross-sectional and en face OCT views of the upper and lower gastrointestinal tract were generated with precision distal pneumatic longitudinal actuation as well as proximal manual longitudinal actuation. These devices could enable clinical studies either as an adjunct to endoscopy, attached to an endoscope, or as a swallowed tethered capsule for non-endoscopic imaging without sedation. The combination of ultrahigh speed imaging and distal scanning capsule technology could enable both screening and surveillance applications. PMID:25909001

Ultrahigh speed en face OCT capsule for endoscopic imaging.

PubMed

Liang, Kaicheng; Traverso, Giovanni; Lee, Hsiang-Chieh; Ahsen, Osman Oguz; Wang, Zhao; Potsaid, Benjamin; Giacomelli, Michael; Jayaraman, Vijaysekhar; Barman, Ross; Cable, Alex; Mashimo, Hiroshi; Langer, Robert; Fujimoto, James G

2015-04-01

Depth resolved and en face OCT visualization in vivo may have important clinical applications in endoscopy. We demonstrate a high speed, two-dimensional (2D) distal scanning capsule with a micromotor for fast rotary scanning and a pneumatic actuator for precision longitudinal scanning. Longitudinal position measurement and image registration were performed by optical tracking of the pneumatic scanner. The 2D scanning device enables high resolution imaging over a small field of view and is suitable for OCT as well as other scanning microscopies. Large field of view imaging for screening or surveillance applications can also be achieved by proximally pulling back or advancing the capsule while scanning the distal high-speed micromotor. Circumferential en face OCT was demonstrated in living swine at 250 Hz frame rate and 1 MHz A-scan rate using a MEMS tunable VCSEL light source at 1300 nm. Cross-sectional and en face OCT views of the upper and lower gastrointestinal tract were generated with precision distal pneumatic longitudinal actuation as well as proximal manual longitudinal actuation. These devices could enable clinical studies either as an adjunct to endoscopy, attached to an endoscope, or as a swallowed tethered capsule for non-endoscopic imaging without sedation. The combination of ultrahigh speed imaging and distal scanning capsule technology could enable both screening and surveillance applications.

Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits

PubMed Central

Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

2014-01-01

Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits. PMID:24463956

Chip-integrated ultrawide-band all-optical logic comparator in plasmonic circuits.

PubMed

Lu, Cuicui; Hu, Xiaoyong; Yang, Hong; Gong, Qihuang

2014-01-27

Optical computing opens up the possibility for the realization of ultrahigh-speed and ultrawide-band information processing. Integrated all-optical logic comparator is one of the indispensable core components of optical computing systems. Unfortunately, up to now, no any nanoscale all-optical logic comparator suitable for on-chip integration applications has been realized experimentally. Here, we report a subtle and effective technical solution to circumvent the obstacles of inherent Ohmic losses of metal and limited propagation length of SPPs. A nanoscale all-optical logic comparator suitable for on-chip integration applications is realized in plasmonic circuits directly. The incident single-bit (or dual-bit) logic signals can be compared and the comparison results are endowed with different logic encodings. An ultrabroad operating wavelength range from 700 to 1000 nm, and an ultrahigh output logic-state contrast-ratio of more than 25 dB are realized experimentally. No high power requirement is needed. Though nanoscale SPP light source and the logic comparator device are integrated into the same plasmonic chip, an ultrasmall feature size is maintained. This work not only paves a way for the realization of complex logic device such as adders and multiplier, but also opens up the possibility for realizing quantum solid chips based on plasmonic circuits.

Effects of the local environment on CNT-based nanoelectronics: development of a microenvironment probe station.

PubMed

McClain, Devon; Thomas, Nicole; Nguyen, Tri; O'Brien, Kevin P; Jiao, Jun

2010-11-01

In this study, we report the development of a microenvironment probe station capable of detecting the effect of small changes to the local environment around a carbon nanotube conduction channel. The microenvironment probe station is highly versatile and is used to characterize alterations in carbon nanotube field effect transistor electrical behavior in response to changes in temperature, gas species, infrared and ultraviolet light. All devices were electrically characterized in atmospheric, ultrahigh vacuum and oxygen-rich environments. The results suggest that devices could be changed from n-type at 1 x 10(-8) torr through an intermediate ambipolar state at 1 x 10(-4) torr to p-type at atmosphere solely by increasing the oxygen concentration. The average resistance of these carbon nanotube field effect transistors after annealing was observed to decrease by approximately 54% from their initial value under ultrahigh vacuum to their final value in the presence of pure oxygen while corresponding threshold voltages shifts were also observed. Illumination with infrared light resulted in a approximately 10% increase in drain current with an estimated response time <1 fs due to photon-induced electron-hole pair generation. Illumination with ultraviolet light resulted in approximately 5-15% reduction in drain current due to photon-induced desorption of oxygen adsorbate.

Nonlinear graphene plasmonics

PubMed Central

2017-01-01

The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications. PMID:29118665

Nonlinear graphene plasmonics

NASA Astrophysics Data System (ADS)

Ooi, Kelvin J. A.; Tan, Dawn T. H.

2017-10-01

The rapid development of graphene has opened up exciting new fields in graphene plasmonics and nonlinear optics. Graphene's unique two-dimensional band structure provides extraordinary linear and nonlinear optical properties, which have led to extreme optical confinement in graphene plasmonics and ultrahigh nonlinear optical coefficients, respectively. The synergy between graphene's linear and nonlinear optical properties gave rise to nonlinear graphene plasmonics, which greatly augments graphene-based nonlinear device performance beyond a billion-fold. This nascent field of research will eventually find far-reaching revolutionary technological applications that require device miniaturization, low power consumption and a broad range of operating wavelengths approaching the far-infrared, such as optical computing, medical instrumentation and security applications.

Stabilizing Microwave Frequency of a Photonic Oscillator

NASA Technical Reports Server (NTRS)

Maleki, Lute; Yu, Nan; Tu, Meirong

2006-01-01

A scheme for stabilizing the frequency of a microwave signal is proposed that exploits the operational characteristics of a coupled optoelectronic oscillator (COEO) and related optoelectronic equipment. An essential element in the scheme is a fiber mode-locked laser (MLL), the optical frequency of which is locked to an atomic transition. In this scheme, the optical frequency stability of the mode-locked laser is transferred to that of the microwave in the same device. Relative to prior schemes for using wideband optical frequency comb to stabilize microwave signals, this scheme is simpler and lends itself more readily to implementation in relatively compact, rugged equipment. The anticipated development of small, low-power, lightweight, highly stable microwave oscillators based on this scheme would afford great benefits in communication, navigation, metrology, and fundamental sciences. COEOs of various designs, at various stages of development, in some cases called by different names, have been described in a number of prior NASA Tech Briefs articles. A COEO is an optoelectronic apparatus that generates both short (picosecond) optical pulses and a steady microwave signal having an ultrahigh degree of spectral purity. The term "coupled optoelectronic" in the full name of such an apparatus signifies that its optical and electronic oscillations are coupled to each other in a single device. The present frequency-stabilization scheme is best described indirectly by describing the laboratory apparatus used to demonstrate it. The apparatus (see figure) includes a COEO that generates a comb-like optical spectrum, the various frequency components of which interfere, producing short optical pulses. This spectrum is centered at a nominal wavelength of 1,560 nm. The spectrum separation of this comb is about 10 GHz, as determined primarily by the length of an optical loop and the bandpass filter in the microwave feedback loop. The optical loop serves as microwave resonator having a very high value of the resonance quality factor (Q). The optical frequency of MLL is then stabilized by locking it to an atomic transition as described below. The COEO contains a tunable 1-nm band-pass optical filter and a piezoelectric-transducer (PZT) drum over which a stretch of fiber is wound. The 1-nm-wide pass band of the filter provides coarse tuning to overlap the frequency comb with the atomic transition frequency. Controlled stretching of the fiber by means of the PZT drum can be used in conjunction with temperature control for locking the laser frequency. To reference to an atomic resonance at 780 nm in this demonstration setup, the optical output of the COEO at 1,560 nm is fed through an erbium-doped-fiber amplifier (EDFA) to a frequency doubler in the form of a periodically poled lithium niobate (PPLN) crystal. The frequency-doubled output is combined with the output of a separate frequency-stabilized diode laser at a photodetector. As described thus far, the two 780-nm laser subsystems are nominally independent of each other and can, therefore, operate at different frequencies. Hence, at the photodetector, the two laser beams interfere, so that the output of the photodetector includes a beat note (a component at the difference between the two laser frequencies).

Efficient Ultra-High Speed Communication with Simultaneous Phase and Amplitude Regenerative Sampling (SPARS)

NASA Astrophysics Data System (ADS)

Carlowitz, Christian; Girg, Thomas; Ghaleb, Hatem; Du, Xuan-Quang

2017-09-01

For ultra-high speed communication systems at high center frequencies above 100 GHz, we propose a disruptive change in system architecture to address major issues regarding amplifier chains with a large number of amplifier stages. They cause a high noise figure and high power consumption when operating close to the frequency limits of the underlying semiconductor technologies. Instead of scaling a classic homodyne transceiver system, we employ repeated amplification in single-stage amplifiers through positive feedback as well as synthesizer-free self-mixing demodulation at the receiver to simplify the system architecture notably. Since the amplitude and phase information for the emerging oscillation is defined by the input signal and the oscillator is only turned on for a very short time, it can be left unstabilized and thus come without a PLL. As soon as gain is no longer the most prominent issue, relaxed requirements for all the other major components allow reconsidering their implementation concepts to achieve further improvements compared to classic systems. This paper provides the first comprehensive overview of all major design aspects that need to be addressed upon realizing a SPARS-based transceiver. At system level, we show how to achieve high data rates and a noise performance comparable to classic systems, backed by scaled demonstrator experiments. Regarding the transmitter, design considerations for efficient quadrature modulation are discussed. For the frontend components that replace PA and LNA amplifier chains, implementation techniques for regenerative sampling circuits based on super-regenerative oscillators are presented. Finally, an analog-to-digital converter with outstanding performance and complete interfaces both to the analog baseband as well as to the digital side completes the set of building blocks for efficient ultra-high speed communication.

All-fibre photonic signal generator for attosecond timing and ultralow-noise microwave

PubMed Central

Jung, Kwangyun; Kim, Jungwon

2015-01-01

High-impact frequency comb applications that are critically dependent on precise pulse timing (i.e., repetition rate) have recently emerged and include the synchronization of X-ray free-electron lasers, photonic analogue-to-digital conversion and photonic radar systems. These applications have used attosecond-level timing jitter of free-running mode-locked lasers on a fast time scale within ~100 μs. Maintaining attosecond-level absolute jitter over a significantly longer time scale can dramatically improve many high-precision comb applications. To date, ultrahigh quality-factor (Q) optical resonators have been used to achieve the highest-level repetition-rate stabilization of mode-locked lasers. However, ultrahigh-Q optical-resonator-based methods are often fragile, alignment sensitive and complex, which limits their widespread use. Here we demonstrate a fibre-delay line-based repetition-rate stabilization method that enables the all-fibre photonic generation of optical pulse trains with 980-as (20-fs) absolute r.m.s. timing jitter accumulated over 0.01 s (1 s). This simple approach is based on standard off-the-shelf fibre components and can therefore be readily used in various comb applications that require ultra-stable microwave frequency and attosecond optical timing. PMID:26531777

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Micro- and nanofluidic systems in devices for biological, medical and environmental research

NASA Astrophysics Data System (ADS)

Evstrapov, A. A.

2017-11-01

The use of micro- and nanofluidic systems in modern analytical instruments allow you to implement a number of unique opportunities and achieve ultra-high measurement sensitivity. The possibility of manipulation of the individual biological objects (cells, bacteria, viruses, proteins, nucleic acids) in a liquid medium caused the development of devices on microchip platform for methods: chromatographic and electrophoretic analyzes; polymerase chain reaction; sequencing of nucleic acids; immunoassay; cytometric studies. Development of micro and nano fabrication technologies, materials science, surface chemistry, analytical chemistry, cell engineering have led to the creation of a unique systems such as “lab-on-a-chip”, “human-on-a-chip” and other. This article discusses common in microfluidics materials and methods of making functional structures. Examples of integration of nanoscale structures in microfluidic devices for the implementation of new features and improve the technical characteristics of devices and systems are shown.

3D-printed components for quantum devices.

PubMed

Saint, R; Evans, W; Zhou, Y; Barrett, T; Fromhold, T M; Saleh, E; Maskery, I; Tuck, C; Wildman, R; Oručević, F; Krüger, P

2018-05-30

Recent advances in the preparation, control and measurement of atomic gases have led to new insights into the quantum world and unprecedented metrological sensitivities, e.g. in measuring gravitational forces and magnetic fields. The full potential of applying such capabilities to areas as diverse as biomedical imaging, non-invasive underground mapping, and GPS-free navigation can only be realised with the scalable production of efficient, robust and portable devices. We introduce additive manufacturing as a production technique of quantum device components with unrivalled design freedom and rapid prototyping. This provides a step change in efficiency, compactness and facilitates systems integration. As a demonstrator we present an ultrahigh vacuum compatible ultracold atom source dissipating less than ten milliwatts of electrical power during field generation to produce large samples of cold rubidium gases. This disruptive technology opens the door to drastically improved integrated structures, which will further reduce size and assembly complexity in scalable series manufacture of bespoke portable quantum devices.

On-chip supercapacitors with ultrahigh volumetric performance based on electrochemically co-deposited CuO/polypyrrole nanosheet arrays

NASA Astrophysics Data System (ADS)

Qian, Tao; Zhou, Jinqiu; Xu, Na; Yang, Tingzhou; Shen, Xiaowei; Liu, Xuejun; Wu, Shishan; Yan, Chenglin

2015-10-01

We introduce a new method for fabricating unique on-chip supercapacitors based on CuO/polypyrrole core/shell nanosheet arrays by means of direct electrochemical co-deposition on interdigital-like electrodes. The prepared all-solid-state device demonstrates exceptionally high specific capacitance of 1275.5 F cm-3 (˜40 times larger than that of CuO-only supercapacitors) and high-energy-density of 28.35 mWh cm-3, which are both significantly greater than other solid-state supercapacitors. More importantly, the device maintains approximately 100% capacity retention at 2.5 A cm-3 after 3000 cycles. The in situ co-deposition of CuO/polypyrrole nanosheets on interdigital substrate enables effective charge transport, electrode fabrication integrity, and device integration. Because of their high energy, power density, and stable cycling stability, these newly developed on-chip supercapacitors permit fast, reliable applications in portable and miniaturized electronic devices.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Silicon-graphene photonic devices

NASA Astrophysics Data System (ADS)

Yin, Yanlong; Li, Jiang; Xu, Yang; Tsang, Hon Ki; Dai, Daoxin

2018-06-01

Silicon photonics has attracted much attention because of the advantages of CMOS (complementary-metal-oxide-semiconductor) compatibility, ultra-high integrated density, etc. Great progress has been achieved in the past decades. However, it is still not easy to realize active silicon photonic devices and circuits by utilizing the material system of pure silicon due to the limitation of the intrinsic properties of silicon. Graphene has been regarded as a promising material for optoelectronics due to its unique properties and thus provides a potential option for realizing active photonic integrated devices on silicon. In this paper, we present a review on recent progress of some silicon-graphene photonic devices for photodetection, all-optical modulation, as well as thermal-tuning. Project supported by the National Major Research and Development Program (No. 2016YFB0402502), the National Natural Science Foundation of China (Nos. 11374263, 61422510, 61431166001, 61474099, 61674127), and the National Key Research and Development Program (No. 2016YFA0200200).

Band-pass Fabry-Pèrot magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Sharma, Abhishek; Tulapurkar, Ashwin. A.; Muralidharan, Bhaskaran

2018-05-01

We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass Fabry-Pèrot magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (≈5 × 104%) and nearly 1200% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronic device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena.

On-chip supercapacitors with ultrahigh volumetric performance based on electrochemically co-deposited CuO/polypyrrole nanosheet arrays.

PubMed

Qian, Tao; Zhou, Jinqiu; Xu, Na; Yang, Tingzhou; Shen, Xiaowei; Liu, Xuejun; Wu, Shishan; Yan, Chenglin

2015-10-23

We introduce a new method for fabricating unique on-chip supercapacitors based on CuO/polypyrrole core/shell nanosheet arrays by means of direct electrochemical co-deposition on interdigital-like electrodes. The prepared all-solid-state device demonstrates exceptionally high specific capacitance of 1275.5 F cm(-3) (∼40 times larger than that of CuO-only supercapacitors) and high-energy-density of 28.35 mWh cm(-3), which are both significantly greater than other solid-state supercapacitors. More importantly, the device maintains approximately 100% capacity retention at 2.5 A cm(-3) after 3000 cycles. The in situ co-deposition of CuO/polypyrrole nanosheets on interdigital substrate enables effective charge transport, electrode fabrication integrity, and device integration. Because of their high energy, power density, and stable cycling stability, these newly developed on-chip supercapacitors permit fast, reliable applications in portable and miniaturized electronic devices.

Novel five-state latch using double-peak negative differential resistance and standard ternary inverter

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2016-04-01

We propose complement double-peak negative differential resistance (NDR) devices with ultrahigh peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with conventional CMOS and its compact five-state latch circuit by introducing standard ternary inverter (STI). At the “high”-state of STI, n-type NDR device (tunnel diode with nMOS) has 1st NDR characteristics with 1st peak and valley by band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT), whereas p-type NDR device (tunnel diode with pMOS) has second NDR characteristics from the suppression of diode current by off-state MOSFET. The “intermediate”-state of STI permits double-peak NDR device to operate five-state latch with only four transistors, which has 33% area reduction compared with that of binary inverter and 57% bit-density reduction compared with binary latch.

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

NASA Astrophysics Data System (ADS)

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

2018-06-01

Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

Interaction of ultrashort laser pulses and silicon solar cells under short circuit conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mundus, M., E-mail: markus.mundus@ise.fraunhofer.de; Giesecke, J. A.; Fischer, P.

Ultrashort pulse lasers are promising tools for numerous measurement purposes. Among other benefits their high peak powers allow for efficient generation of wavelengths in broad spectral ranges and at spectral powers that are orders of magnitude higher than in conventional light sources. Very recently this has been exploited for the establishment of sophisticated measurement facilities for electrical characterization of photovoltaic (PV) devices. As the high peak powers of ultrashort pulses promote nonlinear optical effects they might also give rise to nonlinear interactions with the devices under test that possibly manipulate the measurement outcome. In this paper, we present a comprehensivemore » theoretical and experimental study of the nonlinearities affecting short circuit current (I{sub SC}) measurements of silicon (Si) solar cells. We derive a set of coupled differential equations describing the radiation-device interaction and discuss the nonlinearities incorporated in those. By a semi-analytical approach introducing a quasi-steady-state approximation and integrating a Green's function we solve the system of equations and obtain simulated I{sub SC} values. We validate the theoretical model by I{sub SC} ratios obtained from a double ring resonator setup capable for reproducible generation of various ultrashort pulse trains. Finally, we apply the model to conduct the most prominent comparison of I{sub SC} generated by ultrashort pulses versus continuous illumination. We conclude by the important finding that the nonlinearities induced by ultrashort pulses are negligible for the most common I{sub SC} measurements. However, we also find that more specialized measurements (e.g., of concentrating PV or Si-multijunction devices as well as highly localized electrical characterizations) will be biased by two-photon-absorption distorting the I{sub SC} measurement.« less

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids.

PubMed

Xu, Jixian; Voznyy, Oleksandr; Liu, Mengxia; Kirmani, Ahmad R; Walters, Grant; Munir, Rahim; Abdelsamie, Maged; Proppe, Andrew H; Sarkar, Amrita; García de Arquer, F Pelayo; Wei, Mingyang; Sun, Bin; Liu, Min; Ouellette, Olivier; Quintero-Bermudez, Rafael; Li, Jie; Fan, James; Quan, Lina; Todorovic, Petar; Tan, Hairen; Hoogland, Sjoerd; Kelley, Shana O; Stefik, Morgan; Amassian, Aram; Sargent, Edward H

2018-06-01

Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size 1,2 . Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon 3 . Advances in surface passivation 2,4-7 , combined with advances in device structures 8 , have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 2016 9 . Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (J SC ) and open-circuit voltage (V OC ), as seen in previous reports 3,9-11 . Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic-amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of J SC (32 mA cm -2 ) are fabricated. The V OC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

A vibration-insensitive optical cavity and absolute determination of its ultrahigh stability.

PubMed

Zhao, Y N; Zhang, J; Stejskal, A; Liu, T; Elman, V; Lu, Z H; Wang, L J

2009-05-25

We use the three-cornered-hat method to evaluate the absolute frequency stabilities of three different ultrastable reference cavities, one of which has a vibration-insensitive design that does not even require vibration isolation. An Nd:YAG laser and a diode laser are implemented as light sources. We observe approximately 1 Hz beat note linewidths between all three cavities. The measurement demonstrates that the vibration-insensitive cavity has a good frequency stability over the entire measurement time from 100 ms to 200 s. An absolute, correlation-removed Allan deviation of 1.4 x 10(-15) at s of this cavity is obtained, giving a frequency uncertainty of only 0.44 Hz.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter.

PubMed

Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Ko Park, Sang-Hee; Jeon, Sanghun

2017-10-25

Amorphous oxide semiconductor-based thin film transistors (TFTs) have been considered as excellent switching elements for driving active-matrix organic light-emitting diodes (AMOLED) owing to their high mobility and process compatibility. However, oxide semiconductors have inherent defects, causing fast transient charge trapping and device instability. For the next-generation displays such as flexible, wearable, or transparent displays, an active semiconductor layer with ultrahigh mobility and high reliability at low deposition temperature is required. Therefore, we introduced high density plasma microwave-assisted (MWA) sputtering method as a promising deposition tool for the formation of high density and high-performance oxide semiconductor films. In this paper, we present the effect of the MWA sputtering method on the defects and fast charge trapping in In-Sn-Zn-O (ITZO) TFTs using various AC device characterization methodologies including fast I-V, pulsed I-V, transient current, low frequency noise, and discharge current analysis. Using these methods, we were able to analyze the charge trapping mechanism and intrinsic electrical characteristics, and extract the subgap density of the states of oxide TFTs quantitatively. In comparison to conventional sputtered ITZO, high density plasma MWA-sputtered ITZO exhibits outstanding electrical performance, negligible charge trapping characteristics and low subgap density of states. High-density plasma MWA sputtering method has high deposition rate even at low working pressure and control the ion bombardment energy, resulting in forming low defect generation in ITZO and presenting high performance ITZO TFT. We expect the proposed high density plasma sputtering method to be applicable to a wide range of oxide semiconductor device applications.

Two-slot coiled coaxial cable resonator: reaching critical coupling at a reduced number of coils.

PubMed

Hefferman, Gerald; Chen, Zhen; Wei, Tao

2014-11-01

This paper reports the experimental demonstration of a coiled coaxial cable resonator capable of meeting the critical coupling condition using a reduced number of coils relative to previously reported coiled resonators. By introducing a second slot along the length of the device, a two-slot coiled coaxial cable resonator was fabricated and critical coupling observed at 22 turns. An additional device with one-slot, but otherwise identically constructed, was also fabricated. After 44 turns, the one-slot device had yet to reach critical coupling. An ultrahigh signal-to-noise ratio (greater than 70 dB) was observed at critical coupling of the two-slot device. This reduction in number of slots necessary to reach critical coupling, and the corresponding reduction of physical length of the device, makes this demonstration of the control of critical coupling a potentially important step towards the successful application of coiled coaxial cable resonators to microwave communication and robust sensing applications.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Cross-sectional transport imaging in a multijunction solar cell

DOE PAGES

Haegel, Nancy M.; Ke, Chi -Wen; Taha, Hesham; ...

2016-12-01

Here, we combine a highly localized electron-beam point source excitation to generate excess free carriers with the spatial resolution of optical near-field imaging to map recombination in a cross-sectioned multijunction (Ga 0.5In 0.5P/GaIn 0.01As/Ge) solar cell. By mapping the spatial variations in emission of light for fixed generation (as opposed to traditional cathodoluminescence (CL), which maps integrated emission as a function of position of generation), it is possible to directly monitor the motion of carriers and photons. We observe carrier diffusion throughout the full width of the middle (GaInAs) cell, as well as luminescent coupling from point source excitation inmore » the top cell GaInP to the middle cell. Supporting CL and near-field photoluminescence (PL) measurements demonstrate the excitation-dependent Fermi level splitting effects that influence cross-sectioned spectroscopy results, as well as transport limitations on the spatial resolution of conventional cross-sectional far-field measurements.« less

Status of multijunction solar cells

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chu, C. L.

1996-01-01

This paper describes Applied Solar's present activity on Multijunction (MJ) space cells. We have worked on a variety of MJ cells, both monolithic and mechanically stacked. In recent years, most effort has been directed to GaInP2/GaAs monolithic cells, grown on Ge substrates, and the status of this cell design will be reviewed here. MJ cells are in demand to provide satellite power because of the acceptance of the overwhelming importance of high efficiency to reduce the area, weight and cost of space PV power systems. The need for high efficiencies has already accelerated the production of GaAs/Ge cells, with efficiencies 18.5-19%. When users realized that MJ cells could provide higher efficiencies (from 22% to 26%) with only fractional increase in costs, the demand for production MJ cells increased rapidly. The main purpose of the work described is to transfer the MOCVD growth technology of MJ high efficiency cells to a production environment, providing all the space requirements of users.

Report on Project to Characterize Multi-Junction Solar Cells in the Stratosphere using Low-Cost Balloon and Communication Technologies

NASA Technical Reports Server (NTRS)

Mirza, Ali; Sant, David; Woodyard, James R.; Johnston, Richard R.; Brown, William J.

2002-01-01

Balloon, control and communication technologies are under development in our laboratory for testing multi-junction solar cells in the stratosphere to achieve near AM0 conditions. One flight, Suntracker I, has been carried out reported earlier. We report on our efforts in preparation for a second flight, Suntracker II, that was aborted due to hardware problems. The package for Suntracker I system has been modified to include separate electronics and battery packs for the 70 centimeter and 2 meter systems. The collimator control system and motor gearboxes have been redesigned to address problems with the virtual stops and backlash. Surface mount technology on a printed circuit board was used in place of the through-hole prototype circuit in efforts to reduce weight and size, and improve reliability. A mobile base station has been constructed that includes a 35' tower with a two axis rotator and multi-element yagi antennas. Modifications in Suntracker I and the factors that lead to aborting Suntracker II are discussed.

Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

NASA Astrophysics Data System (ADS)

García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

2012-10-01

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

Technology Pathway Partnership Final Scientific Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, John C. Dr.; Godby, Larry A.

2012-04-26

This report covers the scientific progress and results made in the development of high efficiency multijunction solar cells and the light concentrating non-imaging optics for the commercial generation of renewable solar energy. During the contract period the efficiency of the multijunction solar cell was raised from 36.5% to 40% in commercially available fully qualified cells. In addition significant strides were made in automating production process for these cells in order to meet the costs required to compete with commercial electricity. Concurrent with the cells effort Boeing also developed a non imaging optical systems to raise the light intensity at themore » photovoltaic cell to the rage of 800 to 900 suns. Solar module efficiencies greater than 30% were consistently demonstrated. The technology and its manufacturing were maturated to a projected price of < $0.015 per kWh and demonstrated by automated assembly in a robotic factory with a throughput of 2 MWh/yr. The technology was demonstrated in a 100 kW power plant erected at California State University Northridge, CA.« less

Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

NASA Astrophysics Data System (ADS)

Kewei, Cao; Tong, Liu; Jingming, Liu; Hui, Xie; Dongyan, Tao; Youwen, Zhao; Zhiyuan, Dong; Feng, Hui

2016-06-01

Low dislocation density Ge wafers grown by a vertical gradient freeze (VGF) method used for the fabrication of multi-junction photovoltaic cells (MJC) have been studied by a whole wafer scale measurement of the lattice parameter, X-ray rocking curves, etch pit density (EPD), impurities concentration, minority carrier lifetime and residual stress. Impurity content in the VGF-Ge wafers, including that of B, is quite low although B2O3 encapsulation is used in the growth process. An obvious difference exists across the whole wafer regarding the distribution of etch pit density, lattice parameter, full width at half maximum (FWHM) of the X-ray rocking curve and residual stress measured by Raman spectra. These are in contrast to a reference Ge substrate wafer grown by the Cz method. The influence of the VGF-Ge substrate on the performance of the MJC is analyzed and evaluated by a comparison of the statistical results of cell parameters. Project supported by the National Natural Science Foundation of China (No. 61474104).

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

TOPLHA and ALOHA: comparison between Lower Hybrid wave coupling codes

NASA Astrophysics Data System (ADS)

Meneghini, Orso; Hillairet, J.; Goniche, M.; Bilato, R.; Voyer, D.; Parker, R.

2008-11-01

TOPLHA and ALOHA are wave coupling simulation tools for LH antennas. Both codes are able to account for realistic 3D antenna geometries and use a 1D plasma model. In the framework of a collaboration between MIT and CEA laboratories, the two codes have been extensively compared. In TOPLHA the EM problem is self consistently formulated by means of a set of multiple coupled integral equations having as domain the triangles of the meshed antenna surface. TOPLHA currently uses the FELHS code for modeling the plasma response. ALOHA instead uses a mode matching approach and its own plasma model. Comparisons have been done for several plasma scenarios on different antenna designs: an array of independent waveguides, a multi-junction antenna and a passive/active multi-junction antenna. When simulating the same geometry and plasma conditions the two codes compare remarkably well both for the reflection coefficients and for the launched spectra. The different approach of the two codes to solve the same problem strengthens the confidence in the final results.

Polarization-controlled coherent phonon generation in acoustoplasmonic metasurfaces

NASA Astrophysics Data System (ADS)

Lanzillotti-Kimura, Norberto D.; O'Brien, Kevin P.; Rho, Junsuk; Suchowski, Haim; Yin, Xiaobo; Zhang, Xiang

2018-06-01

Acoustic vibrations at the nanoscale (GHz-THz frequencies) and their interactions with electrons, photons, and other excitations are the heart of an emerging field in physics: nanophononics. The design of ultrahigh frequency acoustic-phonon transducers, with tunable frequency, and easy to integrate in complex systems is still an open and challenging problem for the development of acoustic nanoscopies and phonon lasers. Here we show how an optimized plasmonic metasurface can act as a high-frequency phonon transducer. We report pump-probe experiments in metasurfaces composed of an array of gold nanostructures, revealing that such arrays can act as efficient and tunable photon-phonon transducers, with a strong spectral dependence on the excitation rate and laser polarization. We anticipate our work to be the starting point for the engineering of phononic metasurfaces based on plasmonic nanostructures.

New class of optoelectronic oscillators (OEO) for microwave signal generation and processing

NASA Astrophysics Data System (ADS)

Maleki, Lute; Yao, X. S.

1996-11-01

A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.

Ultrafast-Charging Supercapacitors Based on Corn-Like Titanium Nitride Nanostructures.

PubMed

Yang, Peihua; Chao, Dongliang; Zhu, Changrong; Xia, Xinhui; Zhang, Yongqi; Wang, Xingli; Sun, Peng; Tay, Beng Kang; Shen, Ze Xiang; Mai, Wenjie; Fan, Hong Jin

2016-06-01

Ultrahigh rates realized by ALD-made TiN . The symmetric full-cell supercapacitors deliver a typical capacitance of 20.7 F cm -3 at a scan rate of 1 V s -1 , and retain 4.3 F cm -3 at high rate of 100 V s -1 . The devices can be charged and discharged for 20 000 cycles with negligible capacitance loss and with an ultralow self-discharge current (≈1 μA).

High-Performance electronics at ultra-low power consumption for space applications: From superconductor to nanoscale semiconductor technology

NASA Technical Reports Server (NTRS)

Duncan, Robert V.; Simmons, Jerry; Kupferman, Stuart; McWhorter, Paul; Dunlap, David; Kovanis, V.

1995-01-01

A detailed review of Sandia's work in ultralow power dissipation electronics for space flight applications, including superconductive electronics, new advances in quantum well structures, and ultra-high purity 3-5 materials, and recent advances in micro-electro-optical-mechanical systems (MEMS) is presented. The superconductive electronics and micromechanical devices are well suited for application in micro-robotics, micro-rocket engines, and advanced sensors.

Increasing Laser Stability with Improved Electronic Instruments

NASA Astrophysics Data System (ADS)

Troxel, Daylin; Bennett, Aaron; Erickson, Christopher J.; Jones, Tyler; Durfee, Dallin S.

2010-03-01

We present several electronic instruments developed to implement an ultra-stable laser lock. These instruments include a high speed, low noise homodyne photo-detector; an ultrahigh stability, low noise current driver with high modulation bandwidth and digital control; a high-speed, low noise PID controller; a low-noise piezo driver; and a laser diode temperature controller. We will present the theory of operation for these instruments, design and construction techniques, and essential characteristics for each device.

How to avoid simulation sickness in virtual environments during user displacement

NASA Astrophysics Data System (ADS)

Kemeny, A.; Colombet, F.; Denoual, T.

2015-03-01

Driving simulation (DS) and Virtual Reality (VR) share the same technologies for visualization and 3D vision and may use the same technics for head movement tracking. They experience also similar difficulties when rendering the displacements of the observer in virtual environments, especially when these displacements are carried out using driver commands, including steering wheels, joysticks and nomad devices. High values for transport delay, the time lag between the action and the corresponding rendering cues and/or visual-vestibular conflict, due to the discrepancies perceived by the human visual and vestibular systems when driving or displacing using a control device, induces the so-called simulation sickness. While the visual transport delay can be efficiently reduced using high frequency frame rate, the visual-vestibular conflict is inherent to VR, when not using motion platforms. In order to study the impact of displacements on simulation sickness, we have tested various driving scenarios in Renault's 5-sided ultra-high resolution CAVE. First results indicate that low speed displacements with longitudinal and lateral accelerations under a given perception thresholds are well accepted by a large number of users and relatively high values are only accepted by experienced users and induce VR induced symptoms and effects (VRISE) for novice users, with a worst case scenario corresponding to rotational displacements. These results will be used for optimization technics at Arts et Métiers ParisTech for motion sickness reduction in virtual environments for industrial, research, educational or gaming applications.

Constructing Ultrahigh-Capacity Zinc-Nickel-Cobalt Oxide@Ni(OH)2 Core-Shell Nanowire Arrays for High-Performance Coaxial Fiber-Shaped Asymmetric Supercapacitors.

PubMed

Zhang, Qichong; Xu, Weiwei; Sun, Juan; Pan, Zhenghui; Zhao, Jingxin; Wang, Xiaona; Zhang, Jun; Man, Ping; Guo, Jiabin; Zhou, Zhenyu; He, Bing; Zhang, Zengxing; Li, Qingwen; Zhang, Yuegang; Xu, Lai; Yao, Yagang

2017-12-13

Increased efforts have recently been devoted to developing high-energy-density flexible supercapacitors for their practical applications in portable and wearable electronics. Although high operating voltages have been achieved in fiber-shaped asymmetric supercapacitors (FASCs), low specific capacitance still restricts the further enhancement of their energy density. This article specifies a facile and cost-effective method to directly grow three-dimensionally well-aligned zinc-nickel-cobalt oxide (ZNCO)@Ni(OH) 2 nanowire arrays (NWAs) on a carbon nanotube fiber (CNTF) with an ultrahigh specific capacitance of 2847.5 F/cm 3 (10.678 F/cm 2 ) at a current density of 1 mA/cm 2 , These levels are approximately five times higher than those of ZNCO NWAs/CNTF electrodes (2.10 F/cm 2 ) and four times higher than Ni(OH) 2 /CNTF electrodes (2.55 F/cm 2 ). Benefiting from their unique features, we successfully fabricated a prototype coaxial FASC (CFASC) with a maximum operating voltage of 1.6 V, which was assembled by adopting ZNCO@Ni(OH) 2 NWAs/CNTF as the core electrode and a thin layer of carbon coated vanadium nitride (VN@C) NWAs on a carbon nanotube strip (CNTS) as the outer electrode with KOH poly(vinyl alcohol) (PVA) as the gel electrolyte. A high specific capacitance of 94.67 F/cm 3 (573.75 mF/cm 2 ) and an exceptional energy density of 33.66 mWh/cm 3 (204.02 μWh/cm 2 ) were achieved for our CFASC device, which represent the highest levels of fiber-shaped supercapacitors to date. More importantly, the fiber-shaped ZnO-based photodetector is powered by the integrated CFASC, and it demonstrates excellent sensitivity in detecting UV light. Thus, this work paves the way to the construction of ultrahigh-capacity electrode materials for next-generation wearable energy-storage devices.

Global Broadcast Service (GBS)

DTIC Science & Technology

2013-12-01

as to be unusable by smaller and more mobile units. To this end, GBS currently uses broadcast payloads on two Ultra-High Frequency Follow-On ( UFO ...operational on UFO satellites 8, 9, 10. - Full Satellite Broadcast Manager capability. - Field 20% of JPO Receive Suites (19 units). - Personnel training...capabilities. - Augment UFO GBS with leased commercial satellite services to cover gaps over CONUS. - Demonstrate smart push and user pull capability

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

DTIC Science & Technology

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

NASA Astrophysics Data System (ADS)

Ma, Hao; Li, Chen; Tang, Shixiong; Yan, Jiaqiang; Alatas, Ahmet; Lindsay, Lucas; Sales, Brian C.; Tian, Zhiting

2016-12-01

Cubic boron arsenide (BAs) was predicted to have an exceptionally high thermal conductivity (k ) ˜2000 W m-1K-1 at room temperature, comparable to that of diamond, based on first-principles calculations. Subsequent experimental measurements, however, only obtained a k of ˜200 W m-1K-1 . To gain insight into this discrepancy, we measured phonon dispersion of single-crystal BAs along high symmetry directions using inelastic x-ray scattering and compared these with first-principles calculations. Based on the measured phonon dispersion, we have validated the theoretical prediction of a large frequency gap between acoustic and optical modes and bunching of acoustic branches, which were considered the main reasons for the predicted ultrahigh k . This supports its potential to be a super thermal conductor if very-high-quality single-crystal samples can be synthesized.

Highly birefringent elliptical core photonic crystal fiber for terahertz application

NASA Astrophysics Data System (ADS)

Sultana, Jakeya; Islam, Md. Saiful; Faisal, Mohammad; Islam, Mohammad Rakibul; Ng, Brian W.-H.; Ebendorff-Heidepriem, Heike; Abbott, Derek

2018-01-01

We present a novel strategy for designing a highly birefringent photonic crystal fiber (PCF) with near zero flattened dispersion properties by applying elliptical air holes in the core area. The elliptical structure of the air holes in the porous-core region introduces asymmetry between x and y polarization modes, which consequently offers ultra-high birefringence. Also the compact geometry of the conventional hexagonal structure in the cladding confines most of the useful power. The optical properties including birefringence, dispersion, confinement loss, effective material loss (EML) and single modeness of the fiber are investigated using a full-vector finite element method. Simulation results show an ultra-high birefringence of 0 . 086 ultra-flattened near zero dispersion of 0 . 53 ± 0 . 07 ps/THz/cm in a broad frequency range. The practical implementation of the proposed fiber is feasible using existing fabrication technology and is applicable to the areas of terahertz sensing and polarization maintaining systems.

Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity

DOE PAGES

Ma, Hao; Li, Chen; Tang, Shixiong; ...

2016-12-14

Cubic boron arsenide (BAs) was predicted to have an exceptionally high thermal conductivity (k) ~2000 Wm -1K -1 at room temperature, comparable to that of diamond, based on first-principles calculations. Subsequent experimental measurements, however, only obtained a k of ~200 Wm-1K-1. To gain insight into this discrepancy, we measured phonon dispersion of single crystal BAs along high symmetry directions using inelastic x-ray scattering (IXS) and compared these with first-principles calculations. Based on the measured phonon dispersion, we have validated the theoretical prediction of a large frequency gap between acoustic and optical modes and bunching of acoustic branches, which were consideredmore » the main reasons for the predicted ultrahigh k. This supports its potential to be a super thermal conductor if very high-quality single crystal samples can be synthesized.« less

Design and numerical analysis of a THz square porous-core photonic crystal fiber for low flattened dispersion, ultrahigh birefringence.

PubMed

Luo, Jianfeng; Tian, Fengjun; Qu, Hongkun; Li, Li; Zhang, Jianzhong; Yang, Xinhua; Yuan, Libo

2017-08-20

We propose a kind of square porous-core photonic crystal fiber (PCF) for polarization-maintaining terahertz (THz) wave guidance. An asymmetry is introduced by implementing rectangular array air holes in the porous core of the PCF, and ultrahigh birefringence and low effective material loss (EML) can be achieved simultaneously. The properties of THz wave propagation are analyzed numerically in detail. The numerical results indicate that the proposed fiber offers a high birefringence of 0.063 and a low EML of 0.081  cm -1 at 1 THz. Moreover, a very low flattened dispersion profile is observed over a wide frequency domain of 0.85-1.9 THz. The zero flattened dispersion can be controlled. It is predicted that this PCF would be used potentially in polarization maintaining and dispersion management of THz waves.

Design and fabrication of hybrid SPP waveguides for ultrahigh-bandwidth low-penalty terabit-scale data transmission.

PubMed

Du, Jing; Wang, Jian

2017-11-27

Here we design and fabricate a hybrid surface plasmon polarities (SPP) waveguide on the silicon-on-insulator (SOI) photonics platform. The designed hybrid SPP waveguide is composed of a metal ridge, an air gap, and a silicon ridge. We simulate the mode characteristics in the structure and design the waveguide with a wide air gap that can simplify the fabrication process and maintain the advantages of the hybrid SPP mode. The performance of ultrahigh-bandwidth data transmission through the proposed waveguide is then investigated using 161 wavelength-division multiplexing (WDM) channels, each carrying a 11.2-Gbit/s orthogonal frequency-division multiplexing (OFDM) 16-ary quadrature amplitude modulation (16-QAM) signal. The bit-error rates (BERs) of all 161 channels are less than 1e-3. The favorable results show the prospect of on-chip optical interconnection using the proposed hybrid SPP waveguide.

A Simple Semaphore Signaling Technique for Ultra-High Frequency Spacecraft Communications

NASA Technical Reports Server (NTRS)

Butman, S.; Satorius, E.; Ilott, P.

2005-01-01

For planetary lander missions such as the upcoming Phoenix mission to Mars, the most challenging phase of the spacecraft-to-ground communications is during the critical phase termed entry, descent, and landing (EDL). At 8.4 GHz (X-band), the signals received by the largest Deep Space Network (DSN) antennas can be too weak for even 1 bit per second (bps) and therefore not able to communicate critical information to Earth. Fortunately, the lander s ultra-high frequency (UHF) link to an orbiting relay can meet the EDL requirements, but the data rate needs to be low enough to fit the capability of the UHF link during some or all of EDL. On Phoenix, the minimum data rate of the as-built UHF radio is 8 kbps and requires a signal level at the Odyssey orbiter of at least -120 dBm. For lower signaling levels, the effective data rate needs to be reduced, but without incurring the cost of rebuilding and requalifying the equipment. To address this scenario, a simple form of frequency-shift keying (FSK) has been devised by appropriately programming the data stream that is input to the UHF transceiver. This article describes this technique and provides performance estimates. Laboratory testing reveals that input signal levels at -140 dBm and lower can routinely be demodulated with the proposed signaling scheme, thereby providing a 20-dB and greater margin over the 8-kbps threshold.

A Simple Semaphore Signaling Technique for Ultra-High Frequency Spacecraft Communications

NASA Astrophysics Data System (ADS)

Butman, S.; Satorius, E.; Illott, P.

2005-11-01

For planetary lander missions such as the upcoming Phoenix mission to Mars, the most challenging phase of the spacecraft-to-ground communications is during the critical phase termed entry, descent, and landing (EDL). At 8.4 GHz (X-band), the signals received by the largest Deep Space Network (DSN) antennas can be too weak for even 1 bit per second (bps) and therefore not able to communicate critical information to Earth. Fortunately, the lander's ultra-high frequency (UHF) link to an orbiting relay can meet the EDL requirements, but the data rate needs to be low enough to fit the capability of the UHF link during some or all of EDL. On Phoenix, the minimum data rate of the as-built UHF radio is 8 kbps and requires a signal level at the Odyssey orbiter of at least minus 120 dBm. For lower signaling levels, the effective data rate needs to be reduced, but without incurring the cost of rebuilding and requalifying the equipment. To address this scenario, a simple form of frequency-shift keying (FSK) has been devised by appropriately programming the data stream that is input to the UHF transceiver. This article describes this technique and provides performance estimates. Laboratory testing reveals that input signal levels at minus 140 dBm and lower can routinely be demodulated with the proposed signaling scheme, thereby providing a 20-dB and greater margin over the 8-kbps threshold.

Thermal noise limit for ultra-high vacuum noncontact atomic force microscopy

PubMed Central

Lübbe, Jannis; Temmen, Matthias; Rode, Sebastian; Rahe, Philipp; Kühnle, Angelika

2013-01-01

Summary The noise of the frequency-shift signal Δf in noncontact atomic force microscopy (NC-AFM) consists of cantilever thermal noise, tip–surface-interaction noise and instrumental noise from the detection and signal processing systems. We investigate how the displacement-noise spectral density d z at the input of the frequency demodulator propagates to the frequency-shift-noise spectral density d Δ f at the demodulator output in dependence of cantilever properties and settings of the signal processing electronics in the limit of a negligible tip–surface interaction and a measurement under ultrahigh-vacuum conditions. For a quantification of the noise figures, we calibrate the cantilever displacement signal and determine the transfer function of the signal-processing electronics. From the transfer function and the measured d z, we predict d Δ f for specific filter settings, a given level of detection-system noise spectral density d z ds and the cantilever-thermal-noise spectral density d z th. We find an excellent agreement between the calculated and measured values for d Δ f. Furthermore, we demonstrate that thermal noise in d Δ f, defining the ultimate limit in NC-AFM signal detection, can be kept low by a proper choice of the cantilever whereby its Q-factor should be given most attention. A system with a low-noise signal detection and a suitable cantilever, operated with appropriate filter and feedback-loop settings allows room temperature NC-AFM measurements at a low thermal-noise limit with a significant bandwidth. PMID:23400758

Towards large dynamic range and ultrahigh measurement resolution in distributed fiber sensing based on multicore fiber.

PubMed

Dang, Yunli; Zhao, Zhiyong; Tang, Ming; Zhao, Can; Gan, Lin; Fu, Songnian; Liu, Tongqing; Tong, Weijun; Shum, Perry Ping; Liu, Deming

2017-08-21

Featuring a dependence of Brillouin frequency shift (BFS) on temperature and strain changes over a wide range, Brillouin distributed optical fiber sensors are however essentially subjected to the relatively poor temperature/strain measurement resolution. On the other hand, phase-sensitive optical time-domain reflectometry (Φ-OTDR) offers ultrahigh temperature/strain measurement resolution, but the available frequency scanning range is normally narrow thereby severely restricts its measurement dynamic range. In order to achieve large dynamic range and high measurement resolution simultaneously, we propose to employ both the Brillouin optical time domain analysis (BOTDA) and Φ-OTDR through space-division multiplexed (SDM) configuration based on the multicore fiber (MCF), in which the two sensors are spatially separately implemented in the central core and a side core, respectively. As a proof of concept, the temperature sensing has been performed for validation with 2.5 m spatial resolution over 1.565 km MCF. Large temperature range (10 °C) has been measured by BOTDA and the 0.1 °C small temperature variation is successfully identified by Φ-OTDR with ~0.001 °C resolution. Moreover, the temperature changing process has been recorded by continuously performing the measurement of Φ-OTDR with 80 s frequency scanning period, showing about 0.02 °C temperature spacing at the monitored profile. The proposed system enables the capability to see finer and/or farther upon requirement in distributed optical fiber sensing.

Thermal noise limit for ultra-high vacuum noncontact atomic force microscopy.

PubMed

Lübbe, Jannis; Temmen, Matthias; Rode, Sebastian; Rahe, Philipp; Kühnle, Angelika; Reichling, Michael

2013-01-01

The noise of the frequency-shift signal Δf in noncontact atomic force microscopy (NC-AFM) consists of cantilever thermal noise, tip-surface-interaction noise and instrumental noise from the detection and signal processing systems. We investigate how the displacement-noise spectral density d(z) at the input of the frequency demodulator propagates to the frequency-shift-noise spectral density d(Δ) (f) at the demodulator output in dependence of cantilever properties and settings of the signal processing electronics in the limit of a negligible tip-surface interaction and a measurement under ultrahigh-vacuum conditions. For a quantification of the noise figures, we calibrate the cantilever displacement signal and determine the transfer function of the signal-processing electronics. From the transfer function and the measured d(z), we predict d(Δ) (f) for specific filter settings, a given level of detection-system noise spectral density d(z) (ds) and the cantilever-thermal-noise spectral density d(z) (th). We find an excellent agreement between the calculated and measured values for d(Δ) (f). Furthermore, we demonstrate that thermal noise in d(Δ) (f), defining the ultimate limit in NC-AFM signal detection, can be kept low by a proper choice of the cantilever whereby its Q-factor should be given most attention. A system with a low-noise signal detection and a suitable cantilever, operated with appropriate filter and feedback-loop settings allows room temperature NC-AFM measurements at a low thermal-noise limit with a significant bandwidth.

Use of Proton SEE Data as a Proxy for Bounding Heavy-Ion SEE Susceptibility

NASA Technical Reports Server (NTRS)

Ladbury, Raymond L.; Lauenstein, Jean-Marie; Hayes, Kathryn P.

2015-01-01

Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Glass-embedded two-dimensional silicon photonic crystal devices with a broad bandwidth waveguide and a high quality nanocavity.

PubMed

Jeon, Seung-Woo; Han, Jin-Kyu; Song, Bong-Shik; Noda, Susumu

2010-08-30

To enhance the mechanical stability of a two-dimensional photonic crystal slab structure and maintain its excellent performance, we designed a glass-embedded silicon photonic crystal device consisting of a broad bandwidth waveguide and a nanocavity with a high quality (Q) factor, and then fabricated the structure using spin-on glass (SOG). Furthermore, we showed that the refractive index of the SOG could be tuned from 1.37 to 1.57 by varying the curing temperature of the SOG. Finally, we demonstrated a glass-embedded heterostructured cavity with an ultrahigh Q factor of 160,000 by adjusting the refractive index of the SOG.

All-optical switching in silicon-on-insulator photonic wire nano-cavities.

PubMed

Belotti, Michele; Galli, Matteo; Gerace, Dario; Andreani, Lucio Claudio; Guizzetti, Giorgio; Md Zain, Ahmad R; Johnson, Nigel P; Sorel, Marc; De La Rue, Richard M

2010-01-18

We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

Multi-megawatt, gigajoule plasma operation in Tore Supra

NASA Astrophysics Data System (ADS)

Dumont, R. J.; Goniche, M.; Ekedahl, A.; Saoutic, B.; Artaud, J.-F.; Basiuk, V.; Bourdelle, C.; Corre, Y.; Decker, J.; Elbèze, D.; Giruzzi, G.; Hoang, G.-T.; Imbeaux, F.; Joffrin, E.; Litaudon, X.; Lotte, Ph; Maget, P.; Mazon, D.; Nilsson, E.; The Tore Supra Team

2014-07-01

Integrating several important technological elements required for long pulse operation in magnetic fusion devices, the Tore Supra tokamak routinely addresses the physics and technology issues related to this endeavor and, as a result, contributes essential information on critical issues for ITER. During the last experimental campaign, components of the radiofrequency system including an ITER relevant launcher (passive active multijunction (PAM)) and continuous wave/3.7 GHz klystrons, have been extensively qualified, and then used to develop steady state scenarios in which the lower hybrid (LH), ion cyclotron (IC) and electron cyclotron (EC) systems have been combined in fully stationary shots (duration ˜150 s, injected power up to ˜8 MW, injected/extracted energy up to ˜1 GJ). Injection of LH power in the 5.0-6.0 MW range has extended the domain of accessible plasma parameters to higher densities and non-inductive currents. These discharges exhibit steady electron internal transport barriers (ITBs). We report here on various issues relevant to the steady state operation of future devices, ranging from operational aspects and limitations related to the achievement of long pulses in a fully actively cooled fusion device (e.g. overheating due to fast particle losses), to more fundamental plasma physics topics. The latter include a beneficial influence of IC resonance heating on the magnetohydrodynamic (MHD) stability in these discharges, which has been studied in detail. Another interesting observation is the appearance of oscillations of the central temperature with typical periods of the order of one to several seconds, caused by a nonlinear interplay between LH deposition, MHD activity and bootstrap current in the presence of an ITB.

Ultrahigh-power supercapacitors based on highly conductive graphene nanosheet/nanometer-sized carbide-derived carbon frameworks.

PubMed

Yan, Pengtao; Zhang, Xuesha; Hou, Meiling; Liu, Yanyan; Liu, Ting; Liu, Kang; Zhang, Ruijun

2018-06-22

In order to develop energy storage devices with high power performance, electrodes should hold well-defined pathways for efficient ionic and electronic transport. Herein, we demonstrate a highly conductive graphene nanosheet/nanometer-sized carbide-derived carbon framework (hcGNS/nCDC). In this architecture, nCDC possesses short transport paths for electrolyte ions, thus ensuring the rapid ions transportation. The excellent electrical conductivity of hcGNS can reduce the electrode internal resistance for the supercapacitor and thus endows the hcGNS/nCDC composite electrodes with excellent electronic transportation performance. Electrochemical measurements show that the cyclic voltammogram of hcGNS/nCDC can maintain a rectangular-like shape with the increase of the scan rate from 5 mV s -1 to 20 V s -1 , and the specific capacitance retention is up to 51% even at a high scan rate of 20 V s -1 , suggesting ultrahigh power performance, which, to the best of our knowledge, is among the best power performances reported so far for the carbon materials. Furthermore, the hcGNS/nCDC composite also shows an excellent cycling stability (no drop in its capacitance occurs even after 10000 cycles). This work demonstrates the advantage in the ultrahigh power performance for the framework having both short transport pathways for electrolyte ions and high electrical conductivity.

Ultrahigh-power supercapacitors based on highly conductive graphene nanosheet/nanometer-sized carbide-derived carbon frameworks

NASA Astrophysics Data System (ADS)

Yan, Pengtao; Zhang, Xuesha; Hou, Meiling; Liu, Yanyan; Liu, Ting; Liu, Kang; Zhang, Ruijun

2018-06-01

In order to develop energy storage devices with high power performance, electrodes should hold well-defined pathways for efficient ionic and electronic transport. Herein, we demonstrate a highly conductive graphene nanosheet/nanometer-sized carbide-derived carbon framework (hcGNS/nCDC). In this architecture, nCDC possesses short transport paths for electrolyte ions, thus ensuring the rapid ions transportation. The excellent electrical conductivity of hcGNS can reduce the electrode internal resistance for the supercapacitor and thus endows the hcGNS/nCDC composite electrodes with excellent electronic transportation performance. Electrochemical measurements show that the cyclic voltammogram of hcGNS/nCDC can maintain a rectangular-like shape with the increase of the scan rate from 5 mV s‑1 to 20 V s‑1, and the specific capacitance retention is up to 51% even at a high scan rate of 20 V s‑1, suggesting ultrahigh power performance, which, to the best of our knowledge, is among the best power performances reported so far for the carbon materials. Furthermore, the hcGNS/nCDC composite also shows an excellent cycling stability (no drop in its capacitance occurs even after 10000 cycles). This work demonstrates the advantage in the ultrahigh power performance for the framework having both short transport pathways for electrolyte ions and high electrical conductivity.

Surface-Induced Dissociation of Protein Complexes in a Hybrid Fourier Transform Ion Cyclotron Resonance Mass Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Jing; Zhou, Mowei; Gilbert, Joshua D.

Mass spectrometry continues to develop as a valuable tool in the analysis of proteins and protein complexes. In protein complex mass spectrometry studies, surface-induced dissociation (SID) has been successfully applied in quadrupole time-of-flight (Q-TOF) instruments. SID provides structural information on noncovalent protein complexes that is complementary to other techniques. However, the mass resolution of Q-TOF instruments can limit the information that can be obtained for protein complexes by SID. Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) provides ultrahigh resolution and ultrahigh mass accuracy measurements. Here in this study, an SID device was designed and successfully installed in amore » hybrid FT-ICR instrument in place of the standard gas collision cell. The SID-FT-ICR platform has been tested with several protein complex systems (homooligomers, a heterooligomer, and a protein-ligand complex, ranging from 53 to 85 kDa), and the results are consistent with data previously acquired on Q-TOF platforms, matching predictions from known protein interface information. Lastly, SID fragments with the same m/z but different charge states are well-resolved based on distinct spacing between adjacent isotope peaks, and the addition of metal cations and ligands can also be isotopically resolved with the ultrahigh mass resolution available in FT-ICR.« less

Surface-Induced Dissociation of Protein Complexes in a Hybrid Fourier Transform Ion Cyclotron Resonance Mass Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Jing; Zhou, Mowei; Gilbert, Joshua D.

Mass spectrometry continues to develop as a valuable tool in the analysis of proteins and protein complexes. In protein complex mass spectrometry studies, surface-induced dissociation (SID) has been successfully applied in quadrupole time-of-flight (Q-TOF) instruments. SID provides structural information on non-covalent protein complexes that is complementary to other techniques. However, the mass resolution of Q-TOF instruments can limit the information that can be obtained for protein complexes by SID. Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) provides ultrahigh resolution and ultrahigh mass accuracy measurements. In this study, an SID device was designed and successfully installed in a hybridmore » FT-ICR instrument in place of the standard gas collision cell. The SID-FT-ICR platform has been tested with several protein complex systems (homooligomers, a heterooligomer, and a protein-ligand complex, ranging from 53 kDa to 85 kDa), and the results are consistent with data previously acquired on Q-TOF platforms, matching predictions from known protein interface information. SID fragments with the same m/z but different charge states are well-resolved based on distinct spacing between adjacent isotope peaks, and the addition of metal cations and ligands can also be isotopically resolved with the ultrahigh mass resolution available in FT-ICR.« less

Surface-Induced Dissociation of Protein Complexes in a Hybrid Fourier Transform Ion Cyclotron Resonance Mass Spectrometer

DOE PAGES

Yan, Jing; Zhou, Mowei; Gilbert, Joshua D.; ...

2016-12-02

Mass spectrometry continues to develop as a valuable tool in the analysis of proteins and protein complexes. In protein complex mass spectrometry studies, surface-induced dissociation (SID) has been successfully applied in quadrupole time-of-flight (Q-TOF) instruments. SID provides structural information on noncovalent protein complexes that is complementary to other techniques. However, the mass resolution of Q-TOF instruments can limit the information that can be obtained for protein complexes by SID. Fourier transform ion cyclotron resonance mass spectrometry (FT-ICR MS) provides ultrahigh resolution and ultrahigh mass accuracy measurements. Here in this study, an SID device was designed and successfully installed in amore » hybrid FT-ICR instrument in place of the standard gas collision cell. The SID-FT-ICR platform has been tested with several protein complex systems (homooligomers, a heterooligomer, and a protein-ligand complex, ranging from 53 to 85 kDa), and the results are consistent with data previously acquired on Q-TOF platforms, matching predictions from known protein interface information. Lastly, SID fragments with the same m/z but different charge states are well-resolved based on distinct spacing between adjacent isotope peaks, and the addition of metal cations and ligands can also be isotopically resolved with the ultrahigh mass resolution available in FT-ICR.« less

A Manganin Thin Film Ultra-High Pressure Sensor for Microscale Detonation Pressure Measurement

PubMed Central

Zhang, Guodong; Zhao, Yulong; Zhao, Yun; Wang, Xinchen; Ren, Wei; Li, Hui; Zhao, You

2018-01-01

With the development of energetic materials (EMs) and microelectromechanical systems (MEMS) initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor’s sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm × 0.1 mm × 2 μm and copper electrodes of 2 μm thick are sputtered sequentially on the substrate, and a 25 μm thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa−1. The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size. PMID:29494519

A New Type of Atom Interferometry for Testing Fundamental Physics

NASA Astrophysics Data System (ADS)

Lorek, Dennis; Lämmerzahl, Claus; Wicht, Andreas

We present a new type of atom interferometer (AI) that provides a tool for ultra-high precision tests of fundamental physics. As an example we present how an AI based on highly charged hydrogen-like atoms is affected by gravitational waves (GW). A qualitative description of the quantum interferometric measurement principle is given, the modifications in the atomic Hamiltonian caused by the GW are presented, and the size of the resulting frequency shifts in hydrogen-like atoms is estimated. For a GW amplitude of h = 10-23 the frequency shift is of the order of 110μHz for an AI based on a 91-fold charged uranium ion. A frequency difference of this size can be resolved by current AIs in 1s.

A superhigh-frequency optoelectromechanical system based on a slotted photonic crystal cavity

NASA Astrophysics Data System (ADS)

Sun, Xiankai; Zhang, Xufeng; Poot, Menno; Xiong, Chi; Tang, Hong X.

2012-11-01

We develop an all-integrated optoelectromechanical system that operates in the superhigh frequency band. This system is based on an ultrahigh-Q slotted photonic crystal (PhC) nanocavity formed by two PhC membranes, one of which is patterned with electrode and capacitively driven. The strong simultaneous electromechanical and optomechanical interactions yield efficient electrical excitation and sensitive optical transduction of the bulk acoustic modes of the PhC membrane. These modes are identified up to a frequency of 4.20 GHz, with their mechanical Q factors ranging from 240 to 1730. Directly linking signals in microwave and optical domains, such optoelectromechanical systems will find applications in microwave photonics in addition to those that utilize the electromechanical and optomechanical interactions separately.

Research Fellows | NREL

Science.gov Websites

years and has contributed greatly to world-record efficiencies in various photovoltaic technologies is a world-renowned expert in the fields of multijunction PV, concentrator PV, and PV reliability Publications Photo of Mark O'Malley Mark O'Malley SENIOR RESEARCH FELLOW Mark O'Malley is a world authority on

Impact on storage quality of red blood cells and platelets by ultrahigh-frequency radiofrequency identification tags.

PubMed

Wang, Quan-Li; Wang, Xiao-Wei; Zhuo, Hai-Long; Shao, Chun-Yan; Wang, Jie; Wang, Hai-Ping

2013-04-01

Compared to ISBT128 code labels, radiofrequency identification (RFID) tags have incomparable advantages and gradually applied in blood management system. However, there is no global standard for the uses of RFID frequency. Even though ISBT recommended high-frequency RFID with 13.56MHz, 820- to 960-MHz ultrahigh frequency (UHF) RFID technology in many ways has even more advantages. For this reason, we studied the effect of UHF RFID tags with 820- to 960-MHz exposure on storage quality of red blood cells (RBCs) and platelets (PLTs). Thirty units of collected and prepared suspended RBCs (sRBCs) and PLTs were divided into two bags, one each for the test and control groups. The sRBCs were stored in 4±2°C refrigerator and the PLTs in a 22±2°C rocking box. The test groups were exposed to RF reader continuously during storage. Sampling at different time points and biologic changes were tested. As the extension of storage and the pH and chlorine levels in the supernatant of sRBCs were reduced, free hemoglobin, potassium, and sodium increased, but were not significant between test and control groups (p>0.05). During the storage period, the pH levels, PLT count, and PLT aggregation rate were decreased in both test and control groups, but were not significant (p>0.05). When exposed to 820- to 960-MHz RF, the biologic and biochemical indexes are not found to be exacerbated during 35 days of storage for sRBCs and 5 days for PLTs, respectively. © 2012 American Association of Blood Banks.

In situ oxygen plasma cleaning of microswitch surfaces—comparison of Ti and graphite electrodes

NASA Astrophysics Data System (ADS)

Oh, Changho; Streller, Frank; Ashurst, W. Robert; Carpick, Robert W.; de Boer, Maarten P.

2016-11-01

Ohmic micro- and nanoswitches are of interest for a wide variety of applications including radio frequency communications and as low power complements to transistors. In these switches, it is of paramount importance to maintain surface cleanliness in order to prevent frequent failure by tribopolymer growth. To prepare surfaces, an oxygen plasma clean is expected to be beneficial compared to a high temperature vacuum bakeout because of shorter cleaning time (<5 min compared to ~24 h) and active removal of organic contaminants. We demonstrate that sputtering of the electrode material during oxygen plasma cleaning is a critical consideration for effective cleaning of switch surfaces. With Ti electrodes, a TiO x layer forms that increases electrical contact resistance. When plasma-cleaned using graphite electrodes, the resistance of Pt-coated microswitches exhibit a long lifetime with consistently low resistance (<0.5 Ω variation over 300 million cycles) if the test chamber is refilled with ultra-high purity nitrogen and if the devices are not exposed to laboratory air. Their current-voltage characteristic is also linear at the millivolt level. This is important for nanoswitches which will be operated in that range.

Silicon-graphene conductive photodetector with ultra-high responsivity

PubMed Central

Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

2017-01-01

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

Scalable 2D Hierarchical Porous Carbon Nanosheets for Flexible Supercapacitors with Ultrahigh Energy Density.

PubMed

Yao, Lei; Wu, Qin; Zhang, Peixin; Zhang, Junmin; Wang, Dongrui; Li, Yongliang; Ren, Xiangzhong; Mi, Hongwei; Deng, Libo; Zheng, Zijian

2018-03-01

2D carbon nanomaterials such as graphene and its derivatives, have gained tremendous research interests in energy storage because of their high capacitance and chemical stability. However, scalable synthesis of ultrathin carbon nanosheets with well-defined pore architectures remains a great challenge. Herein, the first synthesis of 2D hierarchical porous carbon nanosheets (2D-HPCs) with rich nitrogen dopants is reported, which is prepared with high scalability through a rapid polymerization of a nitrogen-containing thermoset and a subsequent one-step pyrolysis and activation into 2D porous nanosheets. 2D-HPCs, which are typically 1.5 nm thick and 1-3 µm wide, show a high surface area (2406 m 2 g -1 ) and with hierarchical micro-, meso-, and macropores. This 2D and hierarchical porous structure leads to robust flexibility and good energy-storage capability, being 139 Wh kg -1 for a symmetric supercapacitor. Flexible supercapacitor devices fabricated by these 2D-HPCs also present an ultrahigh volumetric energy density of 8.4 mWh cm -3 at a power density of 24.9 mW cm -3 , which is retained at 80% even when the power density is increased by 20-fold. The devices show very high electrochemical life (96% retention after 10000 charge/discharge cycles) and excellent mechanical flexibility. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Rate capability improvement of Co-Ni double hydroxides integrated in cathodically partially exfoliated graphite

NASA Astrophysics Data System (ADS)

Cai, Xiang; Song, Yu; Sun, Zhen; Guo, Di; Liu, Xiao-Xia

2017-10-01

In-situ growing of energy storage materials on graphene-based substrates/current collectors with low defect is a good way to boost electron transport and so enhance rate capability for the obtained electrode. Herein, high-quality graphene-like nanopetals are partially exfoliated from graphite foil (GF) through a facile and fast cathodic process. Three-dimensional porous structure is established for the afforded cathodically-exfoliated graphite foil (CEG), with many graphene-like nanopetals vertically anchoring on the graphite substrate. A hierarchical structure is constructed by the following electrochemical growth of Co-Ni double hydroxide nanopetals on the graphene atop CEG. The double hydroxide in the obtained electrode with the optimized Co2+/Ni2+ molar ratio, Co0.75Ni0.25(OH)2-CEG, displays much improved rate capability and so can deliver a high specific capacitance of 1460 F g-1 at an ultra-high current density of 100 A g-1. An asymmetric device is assembled by using Co0.75Ni0.25(OH)2-CEG as cathode, which demonstrates a high energy density of 31.6 Wh kg-1 at an ultra-high power density of 21.5 kW kg-1, showing the potential of the hierarchical composite electrode for high power application. The device also displays good stability, it can retain more than 90% of its capacitance after 10000 galvanostatic charge-discharge cycles.

Four-year polymer biocompatibility and vascular healing profile of a novel ultrahigh molecular weight amorphous PLLA bioresorbable vascular scaffold: an OCT study in healthy porcine coronary arteries.

PubMed

Vahl, Torsten P; Gasior, Pawel; Gongora, Carlos A; Ramzipoor, Kamal; Lee, Chang; Cheng, Yanping; McGregor, Jenn; Shibuya, Masahiko; Estrada, Edward A; Conditt, Gerard B; Kaluza, Greg L; Granada, Juan F

2016-12-20

The vascular healing profile of polymers used in bioresorbable vascular scaffolds (BRS) has not been fully characterised in the absence of antiproliferative drugs. In this study, we aimed to compare the polymer biocompatibility profile and vascular healing response of a novel ultrahigh molecular weight amorphous PLLA BRS (FORTITUDE®; Amaranth Medical, Mountain View, CA, USA) against bare metal stent (BMS) controls in porcine coronary arteries. Following device implantation, optical coherence tomography (OCT) evaluation was performed at 0 and 28 days, and at one, two, three and four years. A second group of animals underwent histomorphometric evaluation at 28 and 90 days. At four years, both lumen (BRS 13.19±1.50 mm2 vs. BMS 7.69±2.41 mm2) and scaffold areas (BRS 15.62±1.95 mm2 vs. BMS 8.65±2.37 mm2) were significantly greater for BRS than BMS controls. The degree of neointimal proliferation was comparable between groups. Histology up to 90 days showed comparable healing and inflammation profiles for both devices. At four years, the novel PLLA BRS elicited a vascular healing response comparable to BMS in healthy pigs. Expansive vascular remodelling was evident only in the BRS group, a biological phenomenon that appears to be independent of the presence of antiproliferative drugs.

Investigation of ultrahigh sensitivity in GaInAsP nanolaser biosensor

NASA Astrophysics Data System (ADS)

Saijo, Yoshito; Watanabe, Takumi; Hasegawa, Yu; Nishijima, Yoshiaki; Baba, Toshihiko

2018-02-01

We have developed GaInAsP semiconductor photonic crystal nanolaser biosensor and demonstrated the detection of ultralow-concentration (fM to aM) proteins and deoxyribonucleic acids (DNAs) adsorbed on the device surface. In general, this type of photonic sensors exploiting optical resonance has been considered to detect the refractive index of biomolecules via the wavelength shift. However, this principle cannot explain the detection of such ultralowconcentration. Therefore, we investigated another candidate principle, i.e., ion sensitivity. We consider such a process that 1) the electric charge of biomolecules changes the nanolaser's surface charge, 2) the Schottky barrier near the semiconductor surface is increased or decreased, 3) the distribution of photopumped carriers is modified by the barrier, 4) the refractive index of the semiconductor is changed by the carrier effects, and 5) the laser wavelength shifts. To confirm this process, we electrochemically measured the zeta and flatband potentials when charged electrolyte polymers were adsorbed in water. We clearly observed that these potentials temporally behaved consistently with that of the laser wavelength, which suggests that polymers significantly acted on the Schottky barrier. The same behaviors were also observed for the adsorption of 1 fM DNA. We consider that a limited number of charged DNA changed the surface functional group of the entire device surface. Such charge effects will be the key that achieves the ultrahigh sensitivity in the nanolaser biosensor.

Characterization and Analysis of Multi-Quantum Well Solar Cells

NASA Astrophysics Data System (ADS)

Bradshaw, Geoffrey Keith

Multijunction (MJ) photovoltaics are the most efficient solar cells today. Under sufficient solar concentration, these devices can achieve over 44% efficiency, roughly twenty percentage points higher than single crystal silicon based solar cells. Current records for triple junction (3J) multijunction cells are being challenged and broken regularly. However, it is unclear at this time which method of device growth will ultimately produce an efficiency that approaches the Shockley-Queisser limit. Lattice-matched (LM) MJ cells offer benefits over metamorphic and/or inverted metamorphic cells in that the device can be grown continuously, require no extra fabrication steps, and will ultimate produce the highest material quality throughout all junctions. The efficiency of current 3JMJ cells composed of GaInP(1.8eV)/(In)GaAs(1.4eV)/Ge(0.7eV) is limited by the bandgap combination used in the structure. The low energy bandgap bottom Ge cell produces roughly twice as much current as the middle GaAs cell and results in a current mismatch that limits the total current and thus total efficiency. By replacing the middle GaAs subcell with a 1-1.2eV subcell, the current mismatch could be alleviated and the efficiency enhanced. Unfortunately, there are no semiconductors lattice-matched to GaAs/Ge with this bandgap. InGaAs, which has a larger lattice constant than GaAs/Ge, can be grown with the appropriate bandgap, but due to compressive stresses introduced during growth the thickness that can be grown is limited to tens of nanometers, thus limiting absorption and current production. However, by growing layers of tensile strained GaAsP with appropriate thickness and composition, the stresses introduced by the InGaAs can be balanced. By repeating this process and inserting these layers into the intrinsic region of the GaAs middle subcell, a low bandgap material with an effective lattice constant equal to that of GaAs is introduced while maintaining lattice-matching conditions. The InGaAs layers form quantum well capable of absorbing lower energy wavelengths than GaAs which leads to an increase in current. Absorption due to quantum wells is proportional to the number of quantum wells in the intrinsic region. Therefore, in order to grow the maximum number of the absorbing quantum wells within the background doping limited intrinsic region, it is necessary to reduce the width of the non-absorbing GaAsP barriers to as thin as possible. The research presented within shows this concept by exploring the fabrication and electrical characterization of these quantum well devices when balanced with ultra-thin GaAsP layers with very high phosphorus content (˜75-80%). By reducing the width of the barriers to approximately 30 A, tunneling of carriers dominates carrier transport across the structure as opposed to the traditional quantum well approach with very thick, low phosphorus GaAsP barriers that rely on thermionic emission of carriers to escape the InGaAs quantum wells. This research shows the strong effect and sensitivity to not only the thickness the GaAsP barriers, but also to the polarity of the device and the dependence of electric field. As well widths are decreased, quantum confinement of carriers within the InGaAs quantum wells increases. This leads to a blue-shift in the wavelengths of light absorbed and limits the current gain potential of the quantum well structure. To combat this blue-shift, the staggered MQW is introduced. The staggering technique can be use to not only improve wavelength absorption extension, but also lead to an enhancement in the absorption coefficient. These structures were also included into a GaInP/GaAs(MQW) tandem device to see the effects of the structure on the GaInP top cell.

Ultra-High Density Single Nanometer-Scale Anodic Alumina Nanofibers Fabricated by Pyrophosphoric Acid Anodizing

NASA Astrophysics Data System (ADS)

Kikuchi, Tatsuya; Nishinaga, Osamu; Nakajima, Daiki; Kawashima, Jun; Natsui, Shungo; Sakaguchi, Norihito; Suzuki, Ryosuke O.

2014-12-01

Anodic oxide fabricated by anodizing has been widely used for nanostructural engineering, but the nanomorphology is limited to only two oxides: anodic barrier and porous oxides. Therefore, the discovery of an additional anodic oxide with a unique nanofeature would expand the applicability of anodizing. Here we demonstrate the fabrication of a third-generation anodic oxide, specifically, anodic alumina nanofibers, by anodizing in a new electrolyte, pyrophosphoric acid. Ultra-high density single nanometer-scale anodic alumina nanofibers (1010 nanofibers/cm2) consisting of an amorphous, pure aluminum oxide were successfully fabricated via pyrophosphoric acid anodizing. The nanomorphologies of the anodic nanofibers can be controlled by the electrochemical conditions. Anodic tungsten oxide nanofibers can also be fabricated by pyrophosphoric acid anodizing. The aluminum surface covered by the anodic alumina nanofibers exhibited ultra-fast superhydrophilic behavior, with a contact angle of less than 1°, within 1 second. Such ultra-narrow nanofibers can be used for various nanoapplications including catalysts, wettability control, and electronic devices.

Ultrahigh-throughput exfoliation of graphite into pristine 'single-layer' graphene using microwaves and molecularly engineered ionic liquids.

PubMed

Matsumoto, Michio; Saito, Yusuke; Park, Chiyoung; Fukushima, Takanori; Aida, Takuzo

2015-09-01

Graphene has shown much promise as an organic electronic material but, despite recent achievements in the production of few-layer graphene, the quantitative exfoliation of graphite into pristine single-layer graphene has remained one of the main challenges in developing practical devices. Recently, reduced graphene oxide has been recognized as a non-feasible alternative to graphene owing to variable defect types and levels, and attention is turning towards reliable methods for the high-throughput exfoliation of graphite. Here we report that microwave irradiation of graphite suspended in molecularly engineered oligomeric ionic liquids allows for ultrahigh-efficiency exfoliation (93% yield) with a high selectivity (95%) towards 'single-layer' graphene (that is, with thicknesses <1 nm) in a short processing time (30 minutes). The isolated graphene sheets show negligible structural deterioration. They are also readily redispersible in oligomeric ionic liquids up to ~100 mg ml(-1), and form physical gels in which an anisotropic orientation of graphene sheets, once induced by a magnetic field, is maintained.

Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100).

PubMed

Radocea, Adrian; Sun, Tao; Vo, Timothy H; Sinitskii, Alexander; Aluru, Narayana R; Lyding, Joseph W

2017-01-11

There has been tremendous progress in designing and synthesizing graphene nanoribbons (GNRs). The ability to control the width, edge structure, and dopant level with atomic precision has created a large class of accessible electronic landscapes for use in logic applications. One of the major limitations preventing the realization of GNR devices is the difficulty of transferring GNRs onto nonmetallic substrates. In this work, we developed a new approach for clean deposition of solution-synthesized atomically precise chevron GNRs onto H:Si(100) under ultrahigh vacuum. A clean transfer allowed ultrahigh-vacuum scanning tunneling microscopy (STM) to provide high-resolution imaging and spectroscopy and reveal details of the electronic structure of chevron nanoribbons that have not been previously reported. We also demonstrate STM nanomanipulation of GNRs, characterization of multilayer GNR cross-junctions, and STM nanolithography for local depassivation of H:Si(100), which allowed us to probe GNR-Si interactions and revealed a semiconducting-to-metallic transition. The results of STM measurements were shown to be in good agreement with first-principles computational modeling.

ZnGeSb2: a promising thermoelectric material with tunable ultra-high conductivity.

PubMed

Sreeparvathy, P C; Kanchana, V; Vaitheeswaran, G; Christensen, N E

2016-09-21

First principles calculations predict the promising thermoelectric material ZnGeSb 2 with a huge power factor (S 2 σ/τ) on the order of 3 × 10 17 W m -1 K -2 s -1 , due to the ultra-high electrical conductivity scaled by a relaxation time of around 8.5 × 10 25 Ω -1 m -1 s -1 , observed in its massive Dirac state. The observed electrical conductivity is higher than the well-established Dirac materials, and is almost carrier concentration independent with similar behaviour of both n and p type carriers, which may certainly attract device applications. The low range of thermal conductivity is also evident from the phonon dispersion. Our present study further reports the gradual phase change of ZnGeSb 2 from a normal semiconducting state, through massive Dirac states, to a topological semi-metal. The maximum power factor is observed in the massive Dirac states compared to the other two states.