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Sample records for ultrananocrystalline diamond layers

  1. Nitrogen-incorporated ultrananocrystalline diamond and multi-layer-graphene-like hybrid carbon films

    PubMed Central

    Tzeng, Yonhua; Yeh, Shoupu; Fang, Wei Cheng; Chu, Yuehchieh

    2014-01-01

    Nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) and multi-layer-graphene-like hybrid carbon films have been synthesized by microwave plasma enhanced chemical vapor deposition (MPECVD) on oxidized silicon which is pre-seeded with diamond nanoparticles. MPECVD of N-UNCD on nanodiamond seeds produces a base layer, from which carbon structures nucleate and grow perpendicularly to form standing carbon platelets. High-resolution transmission electron microscopy and Raman scattering measurements reveal that these carbon platelets are comprised of ultrananocrystalline diamond embedded in multilayer-graphene-like carbon structures. The hybrid carbon films are of low electrical resistivity. UNCD grains in the N-UNCD base layer and the hybrid carbon platelets serve as high-density diamond nuclei for the deposition of an electrically insulating UNCD film on it. Biocompatible carbon-based heaters made of low-resistivity hybrid carbon heaters encapsulated by insulating UNCD for possible electrosurgical applications have been demonstrated. PMID:24681781

  2. Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer

    SciTech Connect

    Chu, Yueh-Chieh; Jiang, Gerald; Tu, Chia-Hao; Chang Chi; Liu, Chuan-pu; Ting, Jyh-Ming; Lee, Hsin-Li; Tzeng, Yonhua; Auciello, Orlando

    2012-06-15

    We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

  3. In vitro and in vivo evaluation of ultrananocrystalline diamond as an encapsulation layer for implantable microchips.

    PubMed

    Chen, Ying-Chieh; Tsai, Che-Yao; Lee, Chi-Young; Lin, I-Nan

    2014-05-01

    Thin ultrananocrystalline diamond (UNCD) films were evaluated for use as hermetic and bioinert encapsulating coatings for implantable microchips, where the reaction to UNCD in vitro and in vivo tissue was investigated. Leakage current tests showed that depositing UNCD coatings, which were conformally grown in (1% H2) Ar/CH4 plasma, on microchips rendered the surface electrochemically inactive, i.e. with a very low leakage current density (2.8×10(-5)Acm(-2) at -1V and 1.9×10(-3)Acm(-2) at ±5V) ex vivo. The impact of UNCD with different surface modifications on the growth and activation of macrophages was compared to that of standard-grade polystyrene. Macrophages attached to oxygen-terminated UNCD films down-regulated their production of cytokines and chemokines. Moreover, with UNCD-coated microchips, which were implanted subcutaneously into BALB/c mice for up to 3months, the tissue reaction and capsule formation was significantly decreased compared to the medical-grade titanium alloy Ti-6Al-4V and bare silicon. Additionally, the leakage current density, elicited by electrochemical activity, on silicon chips encapsulated in oxygen-terminated UNCD coatings remained at the low level of 2.5×10(-3)Acm(-2) at 5V for up to 3months in vivo, which is half the level of those encapsulated in hydrogen-terminated UNCD coatings. Thus, controlling the surface properties of UNCDs makes it possible to manipulate the in vivo functionality and stability of implantable devices so as to reduce the host inflammatory response following implantation. These observations suggest that oxygen-terminated UNCDs are promising candidates for use as encapsulating coatings for implantable microelectronic devices.

  4. Nanopatterning of ultrananocrystalline diamond thin films via block copolymer lithography.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.; Sumant, A. V.; Auciello, O.

    2010-07-01

    Nanopatterning of diamond surfaces is critical for the development of diamond-based microelectromechanical system/nanoelectromechanical system (MEMS/NEMS), such as resonators or switches. Micro-/nanopatterning of diamond materials is typically done using photolithography or electron beam lithography combined with reactive ion etching (RIE). In this work, we demonstrate a simple process, block copolymer (BCP) lithography, for nanopatterning of ultrananocrystalline diamond (UNCD) films to produce nanostructures suitable for the fabrication of NEMS based on UNCD. In BCP lithography, nanoscale self-assembled polymeric domains serve as an etch mask for pattern transfer. The authors used thin films of a cylinder-forming organic-inorganic BCP, poly(styrene-block-ferrocenyldimethylsilane), PS-b-PFS, as an etch mask on the surface of UNCD films. Orientational control of the etch masking cylindrical PFS blocks is achieved by manipulating the polymer film thickness in concert with the annealing treatment. We have observed that the surface roughness of UNCD layers plays an important role in transferring the pattern. Oxygen RIE was used to etch the exposed areas of the UNCD film underneath the BCP. Arrays of both UNCD posts and wirelike structures have been created using the same starting polymeric materials as the etch mask.

  5. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

    DOEpatents

    Sumant, Anirudha V.; Baryshev, Sergey V.; Antipov, Sergey P.

    2016-08-16

    A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

  6. Planar Field Emitters and High Efficiency Photocathodes Based on Ultrananocrystalline Diamond

    NASA Technical Reports Server (NTRS)

    Sumant, Anirudha V. (Inventor); Baryshev, Sergey V. (Inventor); Antipov, Sergey P. (Inventor)

    2016-01-01

    A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

  7. Ultrananocrystalline diamond contacts for electronic devices

    DOEpatents

    Sumant, Anirudha V.; Smedley, John; Muller, Erik

    2016-11-01

    A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

  8. Low-stress doped ultrananocrystalline diamond

    DOEpatents

    Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn

    2016-10-25

    Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

  9. Ultrananocrystalline diamond thin films functionalized with therapeutically active collagen networks.

    SciTech Connect

    Huang, H.; Chen, M.; Bruno, P.; Lam, R.; Robinson, E.; Gruen, D.; Ho, D.; Materials Science Division; Northwestern Univ.

    2009-01-01

    The fabrication of biologically amenable interfaces in medicine bridges translational technologies with their surrounding biological environment. Functionalized nanomaterials catalyze this coalescence through the creation of biomimetic and active substrates upon which a spectrum of therapeutic elements can be delivered to adherent cells to address biomolecular processes in cancer, inflammation, etc. Here, we demonstrate the robust functionalization of ultrananocrystalline diamond (UNCD) with type I collagen and dexamethasone (Dex), an anti-inflammatory drug, to fabricate a hybrid therapeutically active substrate for localized drug delivery. UNCD oxidation coupled with a pH-mediated collagen adsorption process generated a comprehensive interface between the two materials, and subsequent Dex integration, activity, and elution were confirmed through inflammatory gene expression assays. These studies confer a translational relevance to the biofunctionalized UNCD in its role as an active therapeutic network for potent regulation of cellular activity toward applications in nanomedicine.

  10. Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices

    NASA Astrophysics Data System (ADS)

    Zalazar, M.; Gurman, P.; Park, J.; Kim, D.; Hong, S.; Stan, L.; Divan, R.; Czaplewski, D.; Auciello, O.

    2013-03-01

    The physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5-10 nm rms roughness) required thickness of ˜400 nm to induce (002) AlN orientation with piezoelectric d33 coefficient ˜1.91 pm/V at ˜10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d33 = 5.3 pm/V.

  11. Anisotropic pattern transfer in ultrananocrystalline diamond films by inductively coupled plasma etching.

    PubMed

    Park, Jong Cheon; Kim, Seong Hak; Cha, Seung Uk; Jeong, Geun; Kim, Tae Gyu; Kim, Jin Kon; Cho, Hyun

    2014-12-01

    High density plasma etching of ultrananocrystalline diamond (UNCD) films wasperformed in O2 and O2/Ar inductively coupled plasma (ICP) discharges. The O2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of -280 nm/min was obtained in 10 sccm O2/5 sccm Ar discharges. Very high etch selectivities up to -140:1 were obtained for the UNCD over Al mask layer. Anisotropic pattern transfer with a vertical sidewall profile was achieved in the 10 sccm O2/5 sccm Ar discharges at a relatively low source power (300 W) and a moderate rf chuck power (200 W). PMID:25971013

  12. Two- and three-dimensional ultrananocrystalline diamond (UNCD) structures for a high resolution diamond-based MEMS technology.

    SciTech Connect

    Auciello, O.; Krauss, A. R.; Gruen, D. M.; Busmann, H. G.; Meyer, E. M.; Tucek, J.; Sumant, A.; Jayatissa, A.; Moldovan, N.; Mancini, D. C.; Gardos, M. N.

    2000-01-17

    Silicon is currently the most commonly used material for the fabrication of microelectromechanical systems (MEMS). However, silicon-based MEMS will not be suitable for long-endurance devices involving components rotating at high speed, where friction and wear need to be minimized, components such as 2-D cantilevers that may be subjected to very large flexural displacements, where stiction is a problem, or components that will be exposed to corrosive environments. The mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of long-endurance MEMS components. Cost-effective fabrication of these components could in principle be achieved by coating Si with diamond films and using conventional lithographic patterning methods in conjunction with e. g. sacrificial Ti or SiO{sub 2} layers. However, diamond coatings grown by conventional chemical vapor deposition (CVD) methods exhibit a coarse-grained structure that prevents high-resolution patterning, or a fine-grained microstructure with a significant amount of intergranular non-diamond carbon. The authors demonstrate here the fabrication of 2-D and 3-D phase-pure ultrananocrystalline diamond (UNCD) MEMS components by coating Si with UNCD films, coupled with lithographic patterning methods involving sacrificial release layers. UNCD films are grown by microwave plasma CVD using C{sub 60}-Ar or CH{sub 4}-Ar gas mixtures, which result in films that have 3--5 nm grain size, are 10--20 times smoother than conventionally grown diamond films, are extremely resistant to corrosive environments, and are predicted to have a brittle fracture strength similar to that of single crystal diamond.

  13. Preventing nanoscale wear of atomic force microscopy tips through the use of monolithic ultrananocrystalline diamond probes.

    PubMed

    Liu, J; Grierson, D S; Moldovan, N; Notbohm, J; Li, S; Jaroenapibal, P; O'Connor, S D; Sumant, A V; Neelakantan, N; Carlisle, J A; Turner, K T; Carpick, R W

    2010-05-21

    Nanoscale wear is a key limitation of conventional atomic force microscopy (AFM) probes that results in decreased resolution, accuracy, and reproducibility in probe-based imaging, writing, measurement, and nanomanufacturing applications. Diamond is potentially an ideal probe material due to its unrivaled hardness and stiffness, its low friction and wear, and its chemical inertness. However, the manufacture of monolithic diamond probes with consistently shaped small-radius tips has not been previously achieved. The first wafer-level fabrication of monolithic ultrananocrystalline diamond (UNCD) probes with <5-nm grain sizes and smooth tips with radii of 30-40 nm is reported, which are obtained through a combination of microfabrication and hot-filament chemical vapor deposition. Their nanoscale wear resistance under contact-mode scanning conditions is compared with that of conventional silicon nitride (SiN(x)) probes of similar geometry at two different relative humidity levels (approximately 15 and approximately 70%). While SiN(x) probes exhibit significant wear that further increases with humidity, UNCD probes show little measurable wear. The only significant degradation of the UNCD probes observed in one case is associated with removal of the initial seed layer of the UNCD film. The results show the potential of a new material for AFM probes and demonstrate a systematic approach to studying wear at the nanoscale.

  14. A conversion model of graphite to ultrananocrystalline diamond via laser processing at ambient temperature and normal pressure

    SciTech Connect

    Ren, X. D. Yang, H. M.; Zheng, L. M.; Tang, S. X.; Ren, N. F.; Xu, S. D.; Yuan, S. Q.

    2014-07-14

    The synthesis mechanism of ultrananocrystalline diamond via laser shock processing of graphite suspension was presented at room temperature and normal pressure, which yielded the ultrananocrystalline diamond in size of about 5 nm. X-ray diffraction, high-resolution transmission electron microscopy, and laser Raman spectroscopy were used to characterize the nano-crystals. The transformation model and growth restriction mechanism of high power density with short-pulsed laser shocking of graphite particles in liquid was put forward.

  15. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

    SciTech Connect

    Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

    2015-03-16

    The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)

  16. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Dong, C. L.; Tai, N. H.; Lin, I. N.

    2015-03-01

    The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E0 = 2.6 V/μm and large EFE current density of Je = 3.2 mA/cm2 (at 5.3 V/μm).

  17. Planar ultrananocrystalline diamond field emitter in accelerator radio frequency electron injector: Performance metrics

    SciTech Connect

    Baryshev, Sergey V. Antipov, Sergey; Jing, Chunguang; Qiu, Jiaqi; Shao, Jiahang; Liu, Wanming; Gai, Wei; Pérez Quintero, Kenneth J.; Sumant, Anirudha V.; Kanareykin, Alexei D.

    2014-11-17

    A case performance study of a planar field emission cathode (FEC) based on nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, was carried out in an RF 1.3 GHz electron gun. The FEC was a 100 nm (N)UNCD film grown on a 20 mm diameter stainless steel disk with a Mo buffer layer. At surface gradients 45–65 MV/m, peak currents of 1–80 mA (equivalent to 0.3–25 mA/cm{sup 2}) were achieved. Imaging with two YAG screens confirmed emission from the (N)UNCD surface with (1) the beam emittance of 1.5 mm × mrad/mm-rms and (2) longitudinal FWHM and rms widths of non-Gaussian energy spread of 0.7% and 11% at an electron energy of 2 MeV. Current stability was tested over the course of 36 × 10{sup 3} RF pulses (equivalent to 288 × 10{sup 6 }GHz oscillations)

  18. Quantum chemical studies of growth mechanisms of ultrananocrystalline diamond.

    SciTech Connect

    Curtiss, L. A.; Zapol, P.; Sternberg, M.; Redfern, P. C.; Horner, D. A.; Gruen, D. M.; Materials Science Division; North Central Coll.

    2004-06-07

    Computational studies of growth mechanisms on diamond surfaces based on C{sub 2} precursor have been reviewed. The investigations have postulated reaction mechanisms with diamond growth occurring by insertion of C{sub 2} into the C-H bonds of the hydrogen-terminated diamond surface or into {pi}-bonded carbon dimers on dehydrogenated diamond surfaces. Reaction barriers for both growth and renucleation at (011) and (100) diamond surfaces had been calculated using quantum chemistry approaches. Preliminary results on growth mechanism involving CN precursors are also reported.

  19. Grain boundary fine structure of ultrananocrystalline diamond thin films measured by Raman scattering

    NASA Astrophysics Data System (ADS)

    Veres, M.; Tóth, S.; Koós, M.

    2007-07-01

    Structural units of the grain boundaries in ultrananocrystalline diamond thin films with different grain sizes were investigated using Raman spectroscopy. Characteristic peaks of well-defined molecular structural building blocks were detected in the near-infrared excited Raman spectra of these materials by limiting the excitation volume to the size of the crystallites using an optical microscope and surface enhanced Raman spectroscopy. The analysis of the spectra provides evidence for the presence of aromatic hydrocarbons and different sp3 CHx groups in grain boundaries of these materials.

  20. Synthesis method for ultrananocrystalline diamond in powder employing a coaxial arc plasma gun

    NASA Astrophysics Data System (ADS)

    Naragino, Hiroshi; Tominaga, Aki; Hanada, Kenji; Yoshitake, Tsuyoshi

    2015-07-01

    A new method that enables us to synthesize ultrananocrystalline diamond (UNCD) in powder is proposed. Highly energetic carbon species ejected from a graphite cathode of a coaxial arc plasma gun were provided on a quartz plate at a high density by repeated arc discharge in a compact vacuum chamber, and resultant films automatically peeled from the plate were aggregated and powdered. The grain size was easily controlled from 2.4 to 15.0 nm by changing the arc discharge energy. It was experimentally demonstrated that the proposed method is a new and promising method that enables us to synthesize UNCD in powder easily and controllably.

  1. Ultrananocrystalline and nanocrystalline diamond thin films for NEMS/MEMS applications.

    SciTech Connect

    Sumant, A. V.; Auciello, O.; Carpick, R. W.; Srinivasan, S.; Butler, J. E.

    2010-04-01

    There has been a tireless quest by the designers of micro- and nanoelectro mechanical systems (MEMS/NEMS) to find a suitable material alternative to conventional silicon. This is needed to develop robust, reliable, and long-endurance MEMS/NEMS with capabilities for working under demanding conditions, including harsh environments, high stresses, or with contacting and sliding surfaces. Diamond is one of the most promising candidates for this because of its superior physical, chemical, and tribomechanical properties. Ultrananocrystalline diamond (UNCD) and nanocrystalline diamond (NCD) thin films, the two most studied forms of diamond films in the last decade, have distinct growth processes and nanostructures but complementary properties. This article reviews the fundamental and applied science performed to understand key aspects of UNCD and NCD films, including the nucleation and growth, tribomechanical properties, electronic properties, and applied studies on integration with piezoelectric materials and CMOS technology. Several emerging diamond-based MEMS/NEMS applications, including high-frequency resonators, radio frequency MEMS and photonic switches, and the first commercial diamond MEMS product - monolithic diamond atomic force microscopy probes - are discussed.

  2. Flexible electron field emitters fabricated using conducting ultrananocrystalline diamond pyramidal microtips on polynorbornene films

    SciTech Connect

    Sankaran, K. J.; Tai, N. H.; Lin, I. N.

    2014-01-20

    High performance flexible field emitters made of aligned pyramidal shaped conducting ultrananocrystalline diamond (C-UNCD) microtips on polynorbornene substrates is demonstrated. Flexible C-UNCD pyramidal microtips show a low turn-on field of 1.80 V/μm with a field enhancement factor of 4580 and a high emission current density of 5.8 mA/cm{sup 2} (at an applied field of 4.20 V/μm) with life-time stability of 210 min. Such an enhancement in the field emission is due to the presence of sp{sup 2}-graphitic sheath with a nanowire-like diamond core. This high performance flexible C-UNCD field emitter is potentially useful for the fabrication of diverse, flexible electronic devices.

  3. Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

    SciTech Connect

    Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie Gu, Changzhi

    2014-05-05

    B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

  4. Wettability of ultrananocrystalline diamond and graphite nanowalls films: a comparison with their single crystal analogs.

    PubMed

    Ostrovskaya, L Y u; Ralchenko, V G; Bolshakov, A P; Saveliev, A V; Dzbanovsky, N N; Shmegera, S V

    2009-06-01

    Dramatic changes in wettability of diamond and graphite are observed when these materials are prepared in nanostructured forms--undoped and nitrogen-doped ultrananocrystalline diamond (UNCD) films, and graphite nanowalls (GNW), respectively. The nanostructured carbon films were deposited on Si by microwave plasma CVD processes. The advancing contact angle theta for water on hydrogenated undoped UNCD films increases to 106 +/- 3 degrees compared to hydrogenated single crystal diamond (theta = 92 degrees). Nitrogen doping (N2 addition to plasma) during UNCD growth makes the film more hydrophilic. The GNW films exhibited superhydrophobic behavior with theta = 144 +/- 3 degrees for water, which is higher than the contact angle of monocrystalline graphite (the basal plane) by a factor of 1.8. No chemical surface treatment is necessary to achieve such high hydrophobicity, it is accomplished solely by a specific (nanoporous, high aspect ratio) surface morphology with very low free surface energy inherent in it. The wetting behaviour of nanostructured films can be described with the Cassie-Baxter equation for heterophase nanoporous surfaces. Oxidation and hydrogenation of UNCD films make it possible to control theta over a much wider range as compared to a single crystal diamond. The influence of diamond grain size on wetting is considered taking into account the surface treatment. The corresponding variation in surface energy has been determined by the modified Young's equation.

  5. Synthesis of ultra-nano-carbon composite materials with extremely high conductivity by plasma post-treatment process of ultrananocrystalline diamond films

    SciTech Connect

    Yeh, Chien-Jui; Leou, Keh-Chyang; Manoharan, Divinah; Chang, Hsin-Tzer; Lin, I-Nan

    2015-08-24

    Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH{sub 4}/N{sub 2} plasma ppt-processed films exhibit high conductivity of σ = 1099 S/cm as well as excellent EFE properties with turn-on field of E{sub 0} = 2.48 V/μm (J{sub e} = 1.0 mA/cm{sup 2} at 6.5 V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.

  6. Synthesis of ultra-nano-carbon composite materials with extremely high conductivity by plasma post-treatment process of ultrananocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Yeh, Chien-Jui; Manoharan, Divinah; Chang, Hsin-Tzer; Leou, Keh-Chyang; Lin, I.-Nan

    2015-08-01

    Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH4/N2 plasma ppt-processed films exhibit high conductivity of σ = 1099 S/cm as well as excellent EFE properties with turn-on field of E0 = 2.48 V/μm (Je = 1.0 mA/cm2 at 6.5 V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.

  7. Transient photoresponse of nitrogen-doped ultrananocrystalline diamond electrodes in saline solution

    NASA Astrophysics Data System (ADS)

    Ahnood, Arman; Simonov, Alexandr N.; Laird, Jamie S.; Maturana, Matias I.; Ganesan, Kumaravelu; Stacey, Alastair; Ibbotson, Michael R.; Spiccia, Leone; Prawer, Steven

    2016-03-01

    Beyond conventional electrically-driven neuronal stimulation methods, there is a growing interest in optically-driven approaches. In recent years, nitrogen-doped ultrananocrystalline diamond (N-UNCD) has emerged as a strong material candidate for use in electrically-driven stimulation electrodes. This work investigates the electrochemical activity of N-UNCD in response to pulsed illumination, to assess its potential for use as an optically-driven stimulation electrode. Whilst N-UNCD in the as-grown state exhibits a weak photoresponse, the oxygen plasma treated film exhibits two orders of magnitude enhancement in its sub-bandgap open circuit photovoltage response. The enhancement is attributed to the formation of a dense network of oxygen-terminated diamond nanocrystals at the N-UNCD surface. Electrically connected to the N-UNCD bulk via sub-surface graphitic grain boundaries, these diamond nanocrystals introduce a semiconducting barrier between the sub-surface graphitic semimetal and the electrolyte solution, leading to a photovoltage under irradiation with wavelengths of λ = 450 nm and shorter. Within the safe optical exposure limit of 2 mW mm-2, charge injection capacity of 0.01 mC cm-2 is achieved using a 15 × 15 μm electrode, meeting the requirements for extracellular and intercellular stimulation. The nanoscale nature of processes presented here along with the diamond's biocompatibility and biostability open an avenue for the use of oxygen treated N-UNCD as optically driven stimulating electrodes.

  8. High Stability Electron Field Emitters Synthesized via the Combination of Carbon Nanotubes and N₂-Plasma Grown Ultrananocrystalline Diamond Films.

    PubMed

    Chang, Ting-Hsun; Hsieh, Ping-Yen; Kunuku, Srinivasu; Lou, Shiu-Cheng; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I-Nan; Tai, Nyan-Hwa

    2015-12-16

    An electron field emitter with superior electron field emission (EFE) properties and improved lifetime stability is being demonstrated via the combination of carbon nanotubes and the CH4/N2 plasma grown ultrananocrystalline diamond (N-UNCD) films. The resistance of the carbon nanotubes to plasma ion bombardment is improved by the formation of carbon nanocones on the side walls of the carbon nanotubes, thus forming strengthened carbon nanotubes (s-CNTs). The N-UNCD films can thus be grown on s-CNTs, forming N-UNCD/s-CNTs carbon nanocomposite materials. The N-UNCD/s-CNTs films possess good conductivity of σ = 237 S/cm and marvelous EFE properties, such as low turn-on field of (E0) = 3.58 V/μm with large EFE current density of (J(e)) = 1.86 mA/cm(2) at an applied field of 6.0 V/μm. Moreover, the EFE emitters can be operated under 0.19 mA/cm(2) for more than 350 min without showing any sign of degradation. Such a superior EFE property along with high robustness characteristic of these combination of materials are not attainable with neither N-UNCD films nor s-CNTs films alone. Transmission electron microscopic investigations indicated that the N-UNCD films contain needle-like diamond grains encased in a few layers of nanographitic phase, which enhanced markedly the transport of electrons in the N-UNCD films. Moreover, the needle-like diamond grains were nucleated from the s-CNTs without the necessity of forming the interlayer that facilitate the transport of electrons crossing the diamond-to-Si interface. Both these factors contributed to the enhanced EFE behavior of the N-UNCD/s-CNTs films.

  9. Method to fabricate portable electron source based on nitrogen incorporated ultrananocrystalline diamond (N-UNCD)

    DOEpatents

    Sumant, Anirudha V.; Divan, Ralu; Posada, Chrystian M.; Castano, Carlos H.; Grant, Edwin J.; Lee, Hyoung K.

    2016-03-29

    A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube "forest" (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

  10. Very Smooth Ultrananocrystalline Diamond Film Growth by a Novel Pretreatment Technique.

    PubMed

    Park, Jong Cheon; Hwang, Sungu; Kim, Tae Gyu; Kim, Jin Kon; Chun, Ho Hwan; Shin, Sung Chul; Cho, Hyun

    2016-02-01

    Very smooth ultrananocrystalline diamond (UNCD) film growth on SiC substrate was achieved by a novel pretreatment technique consisted of SiC surface texturing and deaggregation of nanodiamond (ND) seed particles. Texturing of SiC surfaces in Ar and SF6/02 plasmas was found to be able to provide normalized roughness values of 0.5-7.0 compared to the untreated surface. SiC surface plasma-textured and seeded with H2 heat-treated ND particles at 600 degrees C showed the highest nucleation density of ~44.2 x 10(11) cm(-2) and a highly uniform coverage of surface with very fine ND seeds. The UNCD film grown with this new pretreatment technique showed a very smooth surface morphology consisted of small and uniformly distributed grains. PMID:27433650

  11. Science and technology of ultrananocrystalline diamond (UNCD) thin films for multifunctional devices.

    SciTech Connect

    Auciello, O.; Gruen, D. M.; Krauss, A. R.; Jayatissa, A.; Sumant, A.; Tucek, J.; Mancini, D.; Moldovan, N.; Erdemir, A.; Ersoy, D.; Gardos, M. N.; Busmann, H. G.; Meyer, E. M.

    2000-11-15

    MEMS devices are currently fabricated primarily in silicon because of the available surface machining technology. However, Si has poor mechanical and tribological properties, and practical MEMS devices are currently limited primarily to applications involving only bending and flexural motion, such as cantilever accelerometers and vibration sensors, However, because of the poor flexural strength and fracture toughness of Si, and the tendency of Si to adhere to hydrophyllic surfaces, even these simple devices have limited dynamic range. Future MEMS applications that involve significant rolling or sliding contact will require the use of new materials with significantly improved mechanical and tribological properties, and the ability to perform well in harsh environments. Diamond is a superhard material of high mechanical strength, exceptional chemical inertness, and outstanding thermal stability. The brittle fracture strength is 23 times that of Si, and the projected wear life of diamond MEMS moving mechanical assemblies (MEMS-MMAS) is 10,000 times greater than that of Si MMAs. However, as the hardest known material, diamond is notoriously difficult to fabricate. Conventional CVD thin film deposition methods offer an approach to the fabrication of ultra-small diamond structures, but the films have large grain size, high internal stress, poor intergranular adhesion, and very rough surfaces, and are consequently ill-suited for MEMS-MMA applications. A thin film deposition process has been developed that produces phase-pure ultrananocrystalline diamond (UNCD) with morphological and mechanical properties that are ideally suited for MEMS applications in general, and MMA use in particular. We have developed lithographic techniques for the fabrication of diamond microstructure including cantilevers and multi-level devices, acting as precursors to micro-bearings and gears, making UNCD a promising material for the development of high performance MEMS devices.

  12. Development of ultrananocrystalline diamond (UNCD) coatings for multipurpose mechanical pump seals.

    SciTech Connect

    Kovalchenko, A. M.; Elam, J. W.; Erdemir, A.; Carlisle, J. A.; Auciello, O.; Libera, J. A.; Pellin, M. J.; Gruen, D. M.; Hryn, J. N.

    2011-01-01

    The reliability and performance of silicon carbide (SiC) shaft seals on multipurpose mechanical pumps are improved by applying a protective coating of ultrananocrystalline diamond (UNCD). UNCD exhibits extreme hardness (97 GPa), low friction (0.1 in air) and outstanding chemical resistance. Consequently, the application of UNCD coatings to multipurpose mechanical pump seals can reduce frictional energy losses and eliminate the downtime and hazardous emissions from seal failure and leakage. In this study, UNCD films were prepared by microwave plasma chemical vapor deposition utilizing an argon/methane gas mixture. Prior to coating, the SiC seals were subjected to mechanical polishing using different grades of micron-sized diamond powder to produce different starting surfaces with well-controlled surface roughnesses. Following this roughening process, the seals were seeded by mechanical abrasion with diamond nanopowder, and subsequently coated with UNCD. The coated seals were subjected to dynamic wear testing performed at 3600 RPM and 100 psi for up to 10 days during which the seals were periodically removed and inspected. The UNCD-coated seals were examined using Raman microanalysis, scanning electron microscopy, optical profilometry, and adhesion testing before and after the wear testing. These analyses revealed that delamination of the UNCD films was prevented when the initial SiC seal surface had an initial roughness >0.1 {micro}m. In addition, the UNCD surfaces showed no measurable wear as compared to approximately 0.2 {micro}m of wear for the untreated SiC surfaces.

  13. Ultrananocrystalline diamond film as a wear resistant and protective coating for mechanical seal applications.

    SciTech Connect

    Sumant, A. V.; Krauss, A. R.; Gruen, D. M.; Auciello, O.; Erdemir, A.; Williams, M.; Artiles, A. F.; Adams, W.; Western Michigan Univ.; Flowserve Corp.

    2005-01-01

    Mechanical shaft seals used in pumps are critically important to the safe operation of the paper, pulp, and chemical process industry, as well as petroleum and nuclear power plants. Specifically, these seals prevent the leakage of toxic gases and hazardous chemicals to the environment and final products from the rotating equipment used in manufacturing processes. Diamond coatings have the potential to provide negligible wear, ultralow friction, and high corrosion resistance for the sliding surfaces of mechanical seals, because diamond exhibits outstanding tribological, physical, and chemical properties. However, diamond coatings produced by conventional chemical vapor deposition (CVD) exhibit high surface roughness (R{sub a} {>=} 1 {mu}m), which results in high wear of the seal counterface, leading to premature seal failure. To avoid this problem, we have developed an ultrananocrystalline diamond (UNCD) film formed by a unique CH{sub 4}/Ar microwave plasma CVD method. This method yields extremely smooth diamond coatings with surface roughness R{sub a} = 20-30 nm and an average grain size of 2-5 nm. We report the results of a systematic test program involving uncoated and UNCD-coated SiC shaft seals. Results confirmed that the UNCD-coated seals exhibited neither measurable wear nor any leakage during long-duration tests that took 21 days to complete. In addition, the UNCD coatings reduced the frictional torque for seal rotation by five to six times compared with the uncoated seals. This work promises to lead to rotating shaft seals with much improved service life, reduced maintenance cost, reduced leakage of environmentally hazardous materials, and increased energy savings. This technology may also have many other tribological applications involving rolling or sliding contacts.

  14. Nitrogen incorporated ultrananocrystalline diamond based field emitter array for a flat-panel x-ray source

    SciTech Connect

    Posada, Chrystian M.; Grant, Edwin J.; Lee, Hyoung K.; Castaño, Carlos H.; Divan, Ralu; Sumant, Anirudha V.; Rosenmann, Daniel; Stan, Liliana

    2014-04-07

    A field emission based flat-panel transmission x-ray source is being developed as an alternative for medical and industrial imaging. A field emitter array (FEA) prototype based on nitrogen incorporated ultrananocrystalline diamond film has been fabricated to be used as the electron source of this flat panel x-ray source. The FEA prototype was developed using conventional microfabrication techniques. The field emission characteristics of the FEA prototype were evaluated. Results indicated that emission current densities of the order of 6 mA/cm{sup 2} could be obtained at electric fields as low as 10 V/μm to 20 V/μm. During the prototype microfabrication process, issues such as delamination of the extraction gate and poor etching of the SiO{sub 2} insulating layer located between the emitters and the extraction layer were encountered. Consequently, alternative FEA designs were investigated. Experimental and simulation data from the first FEA prototype were compared and the results were used to evaluate the performance of alternative single and double gate designs that would yield better field emission characteristics compared to the first FEA prototype. The best simulation results are obtained for the double gate FEA design, when the diameter of the collimator gate is around 2.6 times the diameter of the extraction gate.

  15. Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

    NASA Astrophysics Data System (ADS)

    Miksovsky, J.; Voss, A.; Kozarova, R.; Kocourek, T.; Pisarik, P.; Ceccone, G.; Kulisch, W.; Jelinek, M.; Apostolova, M. D.; Reithmaier, J. P.; Popov, C.

    2014-04-01

    Diamond and diamond-like carbon (DLC) films possess a set of excellent physical and chemical properties which together with a high biocompatibility make them attractive candidates for a number of medical and biotechnological applications. In the current work thin ultrananocrystalline diamond (UNCD) and DLC films were comparatively investigated with respect to cell attachment and proliferation after different surface modifications. The UNCD films were prepared by microwave plasma enhanced chemical vapor deposition, the DLC films by pulsed laser deposition (PLD). The films were comprehensively characterized with respect to their basic properties, e.g. crystallinity, morphology, chemical bonding nature, etc. Afterwards the UNCD and DLC films were modified applying O2 or NH3/N2 plasmas and UV/O3 treatments to alter their surface termination. The surface composition of as-grown and modified samples was studied by X-ray photoelectron spectroscopy (XPS). Furthermore the films were characterized by contact angle measurements with water, formamide, 1-decanol and diiodomethane; from the results obtained the surface energy with its dispersive and polar components was calculated. The adhesion and proliferation of MG63 osteosarcoma cells on the different UNCD and DLC samples were assessed by measurement of the cell attachment efficiency and MTT assays. The determined cell densities were compared and correlated with the surface properties of as-deposited and modified UNCD and DLC films.

  16. The influence of sterilization on nitrogen-included ultrananocrystalline diamond for biomedical applications.

    PubMed

    Tong, Wei; Tran, Phong A; Turnley, Ann M; Aramesh, Morteza; Prawer, Steven; Brandt, Milan; Fox, Kate

    2016-04-01

    Diamond has shown great potential in different biomedical applications, but the effects of sterilization on its properties have not been investigated. Here, we studied the influence of five sterilization techniques (solvent cleaning, oxygen plasma, UV irradiation, autoclave and hydrogen peroxide) on nitrogen-included ultrananocrystalline diamond. The chemical modification of the diamond surface was evaluated using X-ray photoelectron spectroscopy and water contact angle measurements. Different degrees of surface oxidation and selective sp(2) bonded carbon etching were found following all sterilization techniques, resulting in an increase of hydrophilicity. Higher viabilities of in vitro mouse 3T3 fibroblasts and rat cortical neuron cells were observed on oxygen plasma, autoclave and hydrogen peroxide sterilized diamond, which correlated with their higher hydrophilicity. By examination of apatite formation in simulated body fluid, in vivo bioactivity was predicted to be best on those surfaces which have been oxygen plasma treated and lowest on those which have been exposed to UV irradiation. The charge injection properties were also altered by the sterilization process and there appears to be a correlation between these changes and the degree of oxygen termination of the surface. We find that the modification brought by autoclave, oxygen plasma and hydrogen peroxide were most consistent with the use of N-UNCD in biological applications as compared to samples sterilized by solvent cleaning or UV exposure or indeed non-sterilized. A two-step process of sterilization by hydrogen peroxide following oxygen plasma treatment was then suggested. However, the final choice of sterilization technique will depend on the intended end application.

  17. Formation of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films in Vacuum Using Coaxial Arc Plasma Gun

    NASA Astrophysics Data System (ADS)

    Hanada, Kenji; Yoshida, Tomohiro; Nakagawa, You; Yoshitake, Tsuyoshi

    2010-12-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite films were grown in vacuum using a coaxial arc plasma gun. From the X-ray diffraction measurement, the UNCD crystallite size was estimated to be 1.6 nm. This size is dramatically reduced from that (2.3 nm) of UNCD/hydrogenated amorphous carbon (a-C:H) composite films grown in a hydrogen atmosphere. The sp3/(sp3 + sp2) value, which was estimated from the X-ray photoemission spectrum, was also reduced to be 41%. A reason for it might be the reduction in the UNCD crystallite size. From the near-edge X-ray absorption fine-structure (NEXAFS) spectrum, it was found that the π*C=C and π*C≡C bonds are preferentially formed instead of the σ*C-H bonds in the UNCD/a-C:H films. Since the extremely small UNCD crystallites (1.6 nm) correspond to the nuclei of diamond, we consider that UNCD crystallite formation should be due predominantly to nucleation. The supersaturated condition required for nucleation is expected to be realized in the deposition using the coaxial arc plasma gun.

  18. Ultra-high wear resistance of ultra-nanocrystalline diamond film: Correlation with microstructure and morphology

    NASA Astrophysics Data System (ADS)

    Rani, R.; Kumar, N.; Lin, I.-Nan

    2016-05-01

    Nanostructured diamond films are having numerous unique properties including superior tribological behavior which is promising for enhancing energy efficiency and life time of the sliding devices. High wear resistance is the principal criterion for the smooth functioning of any sliding device. Such properties are achievable by tailoring the grain size and grain boundary volume fraction in nanodiamond film. Ultra-nanocrystalline diamond (UNCD) film was attainable using optimized gas plasma condition in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. Crystalline phase of ultra-nanodiamond grains with matrix phase of amorphous carbon and short range ordered graphite are encapsulated in nanowire shaped morphology. Film showed ultra-high wear resistance and frictional stability in micro-tribological contact conditions. The negligible wear of film at the beginning of the tribological contact was later transformed into the wearless regime for prolonged sliding cycles. Both surface roughness and high contact stress were the main reasons of wear at the beginning of sliding cycles. However, the interface gets smoothened due to continuous sliding, finally leaded to the wearless regime.

  19. Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices.

    SciTech Connect

    Krauss, A. R.; Gruen, D. M.; Jayatissa, A.; Sumant, A.; Tucek, J.; Auciello, O.; Mancini, D.; Moldovan, N.; Erdemir, A.; Ersoy, D.; Gardos, M. N.; Busmann, H. G.; Meyer, E. M.; Ding, M. Q.; Univ. of Illinois at Chicago; Raytheon Electronic Systems Comp.; Fraunhofer Inst. for Applied Materials Science; Univ. of Bremen; Beijing Inst. of Electronics

    2001-11-01

    outstanding mechanical properties of diamond. We demonstrate here the application of a novel microwave plasma technique using a unique C{sub 60}/Ar or CH{sub 4}/Ar chemistry that produces phase-pure ultrananocrystalline diamond (UNCD) coatings with morphological and mechanical properties that are ideally suited for MEMS applications in general, and MMA use in particular. We have developed lithographic techniques for the fabrication of UNCD-MEMS components, including cantilevers and multi-level devices, acting as precursors to microbearings and gears, making UNCD a promising material for the development of high performance MEMS devices.

  20. Enabling long term monitoring of dopamine using dimensionally stable ultrananocrystalline diamond microelectrodes

    NASA Astrophysics Data System (ADS)

    Dutta, Gaurab; Tan, Chao; Siddiqui, Shabnam; Arumugam, Prabhu U.

    2016-09-01

    Chronic dopamine (DA) monitoring is a critical enabling technology to identify the neural basis of human behavior. Carbon fiber microelectrodes (CFM), the current gold standard electrode for in vivo fast scan cyclic voltammetry (FSCV), rapidly loses sensitivity due to surface fouling during chronic neural testing. Periodic voltage excursions at elevated anodic potentials regenerate fouled CFM surfaces but they also chemically degrade the CFM surfaces. Here, we compare the dimensional stability of 150 μm boron-doped ultrananocrystalline diamond (BDUNCD) microelectrodes in 1X PBS during ‘electrochemical cleaning’ with a similar-sized CFM. Scanning electron microscopy and Raman spectroscopy confirm the exceptional dimensional stability of BDUNCD after 40 h of FSCV cycling (∼8 million cycles). The fitting of electrochemical impedance spectroscopy data to an appropriate circuit model shows a 2x increase in charge transfer resistance and an additional RC element, which suggests oxidation of BDUNCD electrode surface. This could have likely increased the DA oxidation potential by ∼34% to +308 mV. A 2x increase in BDUNCD grain capacitance and a negligible change in grain boundary impedance suggests regeneration of grains and the exposure of new grain boundaries, respectively. Overall, DA voltammogram signals were reduced by only ∼20%. In contrast, the CFM is completely etched with a ∼90% reduction in the DA signal using the same cleaning conditions. Thus, BDUNCD provides a robust electrode surface that is amenable to repeated and aggressive cleaning which could be used for chronic DA sensing.

  1. The potential application of ultra-nanocrystalline diamond films for heavy ion irradiation detection

    SciTech Connect

    Chen, Huang-Chin; Chen, Shih-Show; Wang, Wei-Cheng; Lin, I-Nan; Chang, Ching-Lin; Lee, Chi-Young; Guo, Jinghua

    2013-06-15

    The potential of utilizing the ultra-nanocrystalline (UNCD) films for detecting the Au-ion irradiation was investigated. When the fluence for Au-ion irradiation is lower than the critical value (f{sub c}= 5.0 Multiplication-Sign 10{sup 12} ions/cm{sup 2}) the turn-on field for electron field emission (EFE) process of the UNCD films decreased systematically with the increase in fluence that is correlated with the increase in sp{sup 2}-bonded phase ({pi}{sup *}-band in EELS) due to the Au-ion irradiation. The EFE properties changed irregularly, when the fluence for Au-ion irradiation exceeds this critical value. The transmission electron microscopic microstructural examinations, in conjunction with EELS spectroscopic studies, reveal that the structural change preferentially occurred in the diamond-to-Si interface for the samples experienced over critical fluence of Au-ion irradiation, viz. the crystalline SiC phase was induced in the interfacial region and the thickness of the interface decreased. These observations implied that the UNCD films could be used as irradiation detectors when the fluence for Au-ion irradiation does not exceed such a critical value.

  2. Ultrananocrystalline Diamond Cantilever Wide Dynamic Range Acceleration/Vibration /Pressure Sensor

    DOEpatents

    Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.; Auciello, Orlando

    2003-09-02

    An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

  3. Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

    DOEpatents

    Krauss, Alan R.; Gruen, Dieter M.; Pellin, Michael J.; Auciello, Orlando

    2002-07-23

    An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined. By appropriately modulating the voltages applied between the UNCD cantilever and the two anodes, or limit electrodes, precise independent measurements of pressure, uniaxial acceleration, vibration and shock can be made. This invention also contemplates a method for fabricating the cantilever UNCD structure for the sensor.

  4. Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

    2012-06-01

    Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

  5. In vitro and in vivo evaluation of ultrananocrystalline diamond for coating of implantable retinal microchips.

    PubMed

    Xiao, Xingcheng; Wang, Jian; Liu, Chao; Carlisle, John A; Mech, Brian; Greenberg, Robert; Guven, Dilek; Freda, Ricardo; Humayun, Mark S; Weiland, James; Auciello, Orlando

    2006-05-01

    In this work, ultrananocrystalline diamond (UNCD) thin films were evaluated for use as hermetic and bioinert coatings for a retinal microchip. These films were deposited on highly conductive Si substrates at different temperatures (from 400 to 800 degrees C), using microwave plasma enhanced chemical vapor deposition with argon-rich Ar/CH4 gas mixtures and different relative amounts of hydrogen (0-20%). Scanning electron microscopy studies showed that all the films are dense and continuous. Results of cyclic voltammetry test revealed that when there was <2% of hydrogen in the plasma, the film obtained renders the surface electrochemically inactive, with very low leakage currents ( approximately 4 x 10(-7) A/cm2 at +/-5 V). In addition, in vivo tests of the UNCD-coated Si samples were performed by implanting them in the eyes of rabbits for 4-6 months within the eye physiological environment. According to all these results, it was concluded that UNCD is a promising candidate for use as the encapsulating coatings for implantable retinal microelectronic devices.

  6. Kinetics of the electrochemical mineralization of perfluorooctanoic acid on ultrananocrystalline boron doped conductive diamond electrodes.

    PubMed

    Urtiaga, Ane; Fernández-González, Carolina; Gómez-Lavín, Sonia; Ortiz, Inmaculada

    2015-06-01

    This work deals with the electrochemical degradation and mineralization of perfluorooctanoic acid (PFOA). Model aqueous solutions of PFOA (100mg/L) were electro-oxidized under galvanostatic conditions in a flow-by undivided cell provided with a tungsten cathode and an anode formed by a commercial ultrananocrystalline boron doped diamond (BDD) coating on a niobium substrate. A systematic experimental study was conducted in order to analyze the influence of the following operation variables: (i) the supporting electrolyte, NaClO4 (1.4 and 8.4g/L) and Na2SO4 (5g/L); (ii) the applied current density, japp, in the range 50-200 A/m(2) and (iii) the hydrodynamic conditions, in terms of flowrate in the range 0.4×10(-4)-1.7×10(-4)m(3)/s and temperature in the range 293-313K. After 6h of treatment and at japp 200A/m(2), PFOA removal was higher than 93% and the mineralization ratio, obtained from the decrease of the total organic carbon (TOC) was 95%. The electrochemical generation of hydroxyl radicals in the supporting electrolyte was experimentally measured based on their reaction with dimethyl sulfoxide. The enhanced formation of hydroxyl radicals at higher japp was related to the faster kinetics of PFOA removal. The fitting of experimental data to the proposed kinetic model provided the first order rate constants of PFOA degradation, kc(1) that moved from 2.06×10(-4) to 15.58×10(-4)s(-1), when japp varied from 50 to 200A/m(2).

  7. Kinetics of the electrochemical mineralization of perfluorooctanoic acid on ultrananocrystalline boron doped conductive diamond electrodes.

    PubMed

    Urtiaga, Ane; Fernández-González, Carolina; Gómez-Lavín, Sonia; Ortiz, Inmaculada

    2015-06-01

    This work deals with the electrochemical degradation and mineralization of perfluorooctanoic acid (PFOA). Model aqueous solutions of PFOA (100mg/L) were electro-oxidized under galvanostatic conditions in a flow-by undivided cell provided with a tungsten cathode and an anode formed by a commercial ultrananocrystalline boron doped diamond (BDD) coating on a niobium substrate. A systematic experimental study was conducted in order to analyze the influence of the following operation variables: (i) the supporting electrolyte, NaClO4 (1.4 and 8.4g/L) and Na2SO4 (5g/L); (ii) the applied current density, japp, in the range 50-200 A/m(2) and (iii) the hydrodynamic conditions, in terms of flowrate in the range 0.4×10(-4)-1.7×10(-4)m(3)/s and temperature in the range 293-313K. After 6h of treatment and at japp 200A/m(2), PFOA removal was higher than 93% and the mineralization ratio, obtained from the decrease of the total organic carbon (TOC) was 95%. The electrochemical generation of hydroxyl radicals in the supporting electrolyte was experimentally measured based on their reaction with dimethyl sulfoxide. The enhanced formation of hydroxyl radicals at higher japp was related to the faster kinetics of PFOA removal. The fitting of experimental data to the proposed kinetic model provided the first order rate constants of PFOA degradation, kc(1) that moved from 2.06×10(-4) to 15.58×10(-4)s(-1), when japp varied from 50 to 200A/m(2). PMID:24981910

  8. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    SciTech Connect

    Panda, Kalpataru E-mail: phy.kalpa@gmail.com; Inami, Eiichi; Sugimoto, Yoshiaki; Sankaran, Kamatchi J.; Tai, Nyan Hwa; Lin, I-Nan

    2014-10-20

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  9. Fast Photoresponse and Long Lifetime UV Photodetectors and Field Emitters Based on ZnO/Ultrananocrystalline Diamond Films.

    PubMed

    Saravanan, Adhimoorthy; Huang, Bohr-Ran; Lin, Jun-Cheng; Keiser, Gerd; Lin, I-Nan

    2015-11-01

    We have designed photodetectors and UV field emitters based on a combination of ZnO nanowires/nanorods (ZNRs) and bilayer diamond films in a metal-semiconductor-metal (MSM) structure. The ZNRs were fabricated on different diamond films and systematic investigations showed an ultra-high photoconductive response from ZNRs prepared on ultrananocrystalline diamond (UNCD) operating at a lower voltage of 2 V. We found that the ZNRs/UNCD photodetector (PD) has improved field emission properties and a reduced turn-on field of 2.9 V μm(-1) with the highest electron field emission (EFE) by simply illuminating the sample with ultraviolet (UV) light. The photoresponse (Iphoto /Idark ) behavior of the ZNRs/UNCD PD exhibits a much higher photoresponse (912) than bare ZNRs (229), ZNRs/nanocrystalline diamond (NCD; 518), and ZNRs/microcrystalline diamond (MCD; 325) under illumination at λ=365 nm. A photodetector with UNCD films offers superior stability and a longer lifetime compared with carbon materials and bare ZNRs. The lifetime stability of the ZNRs/UNCD-based device is about 410 min, which is markedly superior to devices that use bare ZNRs (92 min). The ZNRs/UNCD PD possesses excellent photoresponse properties with improved lifetime and stability; in addition, ZNRs/UNCD-based UV emitters have great potential for applications such as cathodes in flat-panel displays and microplasma display devices. PMID:26382200

  10. Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates

    SciTech Connect

    Sankaran, K. J.; Sundaravel, B.; Tai, N. H. E-mail: inanlin@mail.tku.edu.tw; Lin, I. N. E-mail: inanlin@mail.tku.edu.tw

    2015-08-28

    In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm){sup −1}, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm{sup 2} (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices.

  11. Structural and Physical Characteristics of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Deposited Using a Coaxial Arc Plasma Gun

    NASA Astrophysics Data System (ADS)

    Yoshitake, Tsuyoshi; Nakagawa, You; Nagano, Akira; Ohtani, Ryota; Setoyama, Hiroyuki; Kobayashi, Eiichi; Sumitani, Kazushi; Agawa, Yoshiaki; Nagayama, Kunihito

    2010-01-01

    Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were formed without initial nucleation using a coaxial arc plasma gun. The UNCD crystallite diameters estimated from the X-ray diffraction peaks were approximately 2 nm. The Fourier transform infrared absorption spectrum exhibited an intense sp3-CH peak that might originate from the grain boundaries between UNCD crystallites whose dangling bonds are terminated with hydrogen atoms. A narrow sp3 peak in the photoemission spectrum implied that the film comprises a large number of UNCD crystallites. Large optical absorption coefficients at photon energies larger than 3 eV that might be due to the grain boundaries are specific to the UNCD/a-C:H films.

  12. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

    DOEpatents

    Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

    2013-01-15

    An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

  13. Enhancement in electron field emission in ultrananocrystalline and microcrystalline diamond films upon 100 MeV silver ion irradiation

    SciTech Connect

    Chen, H.-C.; Palnitkar, Umesh; Pong, W.-F.; Lin, I-N.; Singh, Abhinav Pratap; Kumar, Ravi

    2009-04-15

    Enhanced electron field emission (EFE) behavior was observed in ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films upon irradiation with 100 MeV Ag{sup 9+}-ions in a fluence of 5x10{sup 11} ions/cm{sup 2}. Transmission electron microscopy indicated that while the overall crystallinity of these films remained essentially unaffected, the local microstructure of the materials was tremendously altered due to heavy ion irradiation, which implied that the melting and recrystallization process have occurred along the trajectory of the heavy ions. Such a process induced the formation of interconnected nanocluster networks, facilitating the electron conduction and enhancing the EFE properties for the materials. The enhancement in the EFE is more prominent for MCD films than that for UNCD films, reaching a low turn-on field of E{sub 0}=3.2 V/mum and large EFE current density of J{sub e}=3.04 mA/cm{sup 2} for 5x10{sup 11} ions/cm{sup 2} heavy ion irradiated samples.

  14. Fundamentals and application of materials integration for low-power piezoelectrically actuated ultra-nanocrystalline diamond MEMS/NEMS.

    SciTech Connect

    Auciello, O.; Srinivasan, S.; Hiller, J.; Kabius, B.

    2009-01-01

    Most current micro/nanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to several projected MEMS/NEMS devices, particularly those that require materials with high Young's modulus for MEMS resonators or low surface adhesion forces for MEMS/NEMS working in conditions with extensive surface contact. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD{cflx W}) in film form with 2-5 nm grains exhibits excellent properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(Zr{sub x}Ti{sub 1-x})O{sub 3} (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This paper describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.

  15. Hard coating of ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Naragino, Hiroshi; Egiza, Mohamed; Tominaga, Aki; Murasawa, Koki; Gonda, Hidenobu; Sakurai, Masatoshi; Yoshitake, Tsuyoshi

    2016-08-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were deposited on cemented carbide containing Co by coaxial arc plasma deposition. With decreasing substrate temperature, the hardness was enhanced accompanied by an enhancement in the sp3/(sp2 + sp3). Energy-dispersive X-ray and secondary ion mass spectrometry spectroscopic measurements exhibited that the diffusion of Co atoms from the substrates into the films hardly occurs. The film deposited at room temperature exhibited the maximum hardness of 51.3 GPa and Young's modulus of 520.2 GPa, which evidently indicates that graphitization induced by Co in the WC substrates, and thermal deformation from sp3 to sp2 bonding are suppressed. The hard UNCD/a-C films can be deposited at a thickness of approximately 3 μm, which is an order larger than that of comparably hard a-C films. The internal compressive stress of the 51.3-GPa film is 4.5 GPa, which is evidently smaller than that of comparably hard a-C films. This is a reason for the thick deposition. The presence of a large number of grain boundaries in the film, which is a structural specific to UNCD/a-C films, might play a role in releasing the internal stress of the films.

  16. Electron field emission enhancement of vertically aligned ultrananocrystalline diamond-coated ZnO core-shell heterostructured nanorods.

    PubMed

    Sankaran, Kamatchi Jothiramalingam; Afsal, Manekkathodi; Lou, Shiu-Cheng; Chen, Huang-Chin; Chen, Chulung; Lee, Chi-Young; Chen, Lih-Juann; Tai, Nyan-Hwa; Lin, I-Nan

    2014-01-15

    Enhanced electron field emission (EFE) behavior of a core-shell heterostructure, where ZnO nanorods (ZNRs) form the core and ultrananocrystalline diamond needles (UNCDNs) form the shell, is reported. EFE properties of ZNR-UNCDN core-shell heterostructures show a high emission current density of 5.5 mA cm(-2) at an applied field of 4.25 V μm(-1) , and a low turn-on field of 2.08 V μm(-1) compared to the 1.67 mA cm(-2) emission current density (at an applied field of 28.7 V μm(-1) ) and 16.6 V μm(-1) turn-on field for bare ZNRs. Such an enhancement in the field emission originates from the unique materials combination, resulting in good electron transport from ZNRs to UNCDNs and efficient field emission of electrons from the UNCDNs. The potential application of these materials is demonstrated by the plasma illumination measurements that lowering the threshold voltage by 160 V confirms the role of ZNR-UNCDN core-shell heterostructures in the enhancement of electron emission.

  17. Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma

    SciTech Connect

    Saravanan, A.; Huang, B. R.; Sankaran, K. J.; Tai, N. H.; Dong, C. L.; Lin, I. N.

    2014-05-05

    This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH{sub 4}/Ar plasma. The UNCD grains were formed at the beginning of the film's growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.

  18. All diamond self-aligned thin film transistor

    DOEpatents

    Gerbi, Jennifer

    2008-07-01

    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  19. Near-Edge X-ray Absorption Fine Structure Imaging of Spherical and Flat Counterfaces of Ultrananocrystalline Diamond Tribological Contacts: A Correlation of Surface Chemistry and Friction

    SciTech Connect

    A Konicek; C Jaye; M Hamilton; W Sawyer; D Fischer; R Carpick

    2011-12-31

    A recently installed synchrotron radiation near-edge X-ray absorption fine structure (NEXAFS) full field imaging electron spectrometer was used to spatially resolve the chemical changes of both counterfaces from an ultra-nanocrystalline diamond (UNCD) tribological contact. A silicon flat and Si{sub 3}N{sub 4} sphere were both coated with UNCD, and employed to form two wear tracks on the flat in a linear reciprocating tribometer. The first wear track was produced using a new, unconditioned sphere whose surface was thus conditioned during this first experiment. This led to faster run-in and lower friction when producing a second wear track using the conditioned sphere. The large depth of field of the magnetically guided NEXAFS imaging detector enabled rapid, large area spectromicroscopic imaging of both the spherical and flat surfaces. Laterally resolved NEXAFS data from the tribological contact area revealed that both substrates had an as-grown surface layer that contained a higher fraction of sp{sup 2}-bonded carbon and oxygen which was mechanically removed. Unlike the flat, the film on the sphere showed evidence of having graphitic character, both before and after sliding. These results show that the graphitic character of the sphere is not solely responsible for low friction and short run-in. Rather, conditioning the sphere, likely by removing asperities and passivating dangling bonds, leads to lower friction with less chemical modification of the substrate in subsequent tests. The new NEXAFS imaging spectroscopy detector enabled a more complete understanding of the tribological phenomena by imaging, for the first time, the surface chemistry of the spherical counterface which had been in continual contact during wear track formation.

  20. Science and technology of ultrananocrystalline diamond (UNCD) thin films for multifunctional devices

    SciTech Connect

    Auciello, O.; Krauss, A. R.; Gruen, D. M.; Jayatissa, A.; Sumant, A.; Tucek, J.; Mancini, D.; Molodvan, N.; Erdemir, A.; Ersoy, D.; Gardos, M. N.; Busman, H. G.; Meyer, E. M.

    2000-08-24

    MEMS devices are currently fabricated primarily in silicon because of the available surface machining technology. However, Si has poor mechanical and tribological properties, and practical MEMS devices are currently limited primarily to applications involving only bending and flexural motion, such as cantilever accelerometers and vibration sensors. However, because of the poor flexural strength and fracture toughness of Si, and the tendency of Si to adhere to hydrophyllic surfaces, even these simple devices have limited dynamic range. Future MEMS applications that involve significant rolling or sliding contact will require the use of new materials with significantly improved mechanical and tribological properties, and the ability to perform well in harsh environments. Diamond is a superhard material of high mechanical strength, exceptional chemical inertness, and outstanding thermal stability. The brittle fracture strength is 23 times that of Si, and the projected wear life of diamond MEMS moving mechanical assemblies (MEMS-MMAs) is 10,000 times greater than that of Si MMAs. However, as the hardest known material, diamond is notoriously difficult to fabricate. Conventional CVD thin film deposition methods offer an approach to the fabrication of ultra-small diamond structures, but the films have large grain size, high internal stress, poor intergranular adhesion, and very rough surfaces, and are consequently ill-suited for MEMS-MMA applications. A thin film deposition process has been developed that produces phase-pure nanocrystalline diamond with morphological and mechanical properties that are ideally suited for MEMS applications in general, and MMA use in particular. The authors have developed lithographic techniques for the fabrication of diamond microstructure including cantilevers and multi-level devices, acting as precursors to micro-bearings and gears, making nanocrystalline diamond a promising material for the development of high performance MEMS devices.

  1. High efficiency diamond solar cells

    DOEpatents

    Gruen, Dieter M.

    2008-05-06

    A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.

  2. Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

    SciTech Connect

    Katamune, Yūki Takeichi, Satoshi; Ohmagari, Shinya; Yoshitake, Tsuyoshi

    2015-11-15

    Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.

  3. Ultrananocrystalline diamond-CMOS device integration route for high acuity retinal prostheses.

    PubMed

    Ahnood, A; Escudie, M C; Cicione, R; Abeyrathne, C D; Ganesan, K; Fox, K E; Garrett, D J; Stacey, A; Apollo, N V; Lichter, S G; Thomas, C D L; Tran, N; Meffin, H; Prawer, S

    2015-01-01

    High density electrodes are a new frontier for biomedical implants. Increasing the density and the number of electrodes used for the stimulation of retinal ganglion cells is one possible strategy for enhancing the quality of vision experienced by patients using retinal prostheses. The present work presents an integration strategy for a diamond based, high density, stimulating electrode array with a purpose built application specific integrated circuit (ASIC). The strategy is centered on flip-chip bonding of indium bumps to create high count and density vertical interconnects between the stimulator ASIC and an array of diamond neural stimulating electrodes. The use of polydimethylsiloxane (PDMS) housing prevents cross-contamination of the biocompatible diamond electrode with non-biocompatible materials, such as indium, used in the microfabrication process. Micro-imprint lithography allowed edge-to-edge micro-scale pattering of the indium bumps on non-coplanar substrates that have a form factor that can conform to body organs and thus are ideally suited for biomedical applications. Furthermore, micro-imprint lithography ensures the compatibility of lithography with the silicon ASIC and aluminum contact pads. Although this work focuses on 256 stimulating diamond electrode arrays with a pitch of 150 μm, the use of indium bump bonding technology and vertical interconnects facilitates implants with tens of thousands electrodes with a pitch as low as 10 μm, thus ensuring validity of the strategy for future high acuity retinal prostheses, and bionic implants in general. PMID:25877379

  4. Time-Resolved Spectroscopic Observation of Deposition Processes of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films by Using a Coaxial Arc Plasma Gun

    NASA Astrophysics Data System (ADS)

    Hanada, Kenji; Yoshitake, Tsuyoshi; Nishiyama, Takashi; Nagayama, Kunihito

    2010-08-01

    The deposition of ultrananocrystalline diamond (UNCD)/amorphous carbon composite films using a coaxial arc plasma gun in vacuum and, for comparison, in a 53.3 Pa hydrogen atmosphere was spectroscopically observed using a high-speed camera equipped with narrow-band-pass filters. UNCD crystallites with diameters of approximately 1.6 nm were formed even in vacuum. These extremely small crystallites imply that the formation is predominantly due to nucleation without the subsequent growth. Even in vacuum, emissions from C+ ions, C atoms, and C2 dimers lasted for approximately 100 µs, although the emission lifetimes of these species are generally 10 ns. We consider that the nucleation is due to the supersaturated environment containing excited carbon species with large number densities.

  5. Bias-enhanced nucleation and growth processes for ultrananocrystalline diamond films in Ar/CH4 plasma and their enhanced plasma illumination properties.

    PubMed

    Saravanan, Adhimoorthy; Huang, Bohr-Ran; Sankaran, Kamatchi Jothiramalingam; Kunuku, Srinivasu; Dong, Chung-Li; Leou, Keh-Chyang; Tai, Nyan-Hwa; Lin, I-Nan

    2014-07-01

    Microstructural evolution of ultrananocrystalline diamond (UNCD) films in the bias-enhanced nucleation and growth (BEN-BEG) process in CH4/Ar plasma is systematically investigated. The BEN-BEG UNCD films possess higher growth rate and better electron field emission (EFE) and plasma illumination (PI) properties than those of the films grown without bias. Transmission electron microscopy investigation reveals that the diamond grains are formed at the beginning of growth for films grown by applying the bias voltage, whereas the amorphous carbon forms first and needs more than 30 min for the formation of diamond grains for the films grown without bias. Moreover, the application of bias voltage stimulates the formation of the nanographite phases in the grain boundaries of the UNCD films such that the electrons can be transported easily along the graphite phases to the emitting surface, resulting in superior EFE properties and thus leading to better PI behavior. Interestingly, the 10 min grown UNCD films under bias offer the lowest turn-on field of 4.2 V/μm with the highest EFE current density of 2.6 mA/cm(2) at an applied field of 7.85 V/μm. Such superior EFE properties attained for 10 min bias grown UNCD films leads to better plasma illumination (PI) properties, i.e., they show the smallest threshold field of 3300 V/cm with largest PI current density of 2.10 mA/cm(2) at an applied field of 5750 V/cm.

  6. Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices

    DOEpatents

    Gruen, Dieter M.; Busmann, Hans-Gerd; Meyer, Eva-Maria; Auciello, Orlando; Krauss, Alan R.; Krauss, Julie R.

    2004-11-02

    MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.

  7. Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Zkria, Abdelrahman; Katamune, Yūki; Yoshitake, Tsuyoshi

    2016-07-01

    3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm‑1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance–voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm‑3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

  8. Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH{sub 4}/Ar plasma

    SciTech Connect

    Sankaran, K. J.; Tai, N. H. E-mail: nhtai@mse.nthu.edu.tw; Huang, B. R.; Saravanan, A.; Lin, I. N. E-mail: nhtai@mse.nthu.edu.tw

    2014-10-28

    Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH{sub 4} and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm{sup 2} at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH{sub 4}/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.

  9. The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect

    SciTech Connect

    Lin, Sheng-Chang; Yeh, Chien-Jui; Leou, Keh-Chyang; Kurian, Joji; Lin, I.-Nan; Dong, Chung-Li; Niu, Huan

    2014-11-14

    The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.

  10. Science and technology of piezoelectric/diamond heterostructures for monolithically integrated high performance MEMS/NEMS/CMOS devices.

    SciTech Connect

    Auciello, O.; Sumant, A. V.; Hiller, J.; Kabius, B.; Ma, Z.; Srinivasan, S.

    2008-12-01

    This paper describes the fundamental and applied science performed to integrate piezoelectric PbZr{sub x}Ti{sub 1-x}O{sub 3} and AlN films with a novel mechanically robust ultrananocrystalline diamond layer to enable a new generation of low voltage/high-performance piezoactuated hybrid piezoelectric/diamond MEMS/NEMS devices.

  11. Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column

    NASA Astrophysics Data System (ADS)

    Lee, Hak-Joo; Jeon, Hyeongtag; Lee, Wook-Seong

    2011-01-01

    We have investigated the ultrananocrystalline diamond (UNCD) deposition by direct-current plasma assisted chemical vapor deposition on 4 in. Si wafer using CH4H2 as well as CH4Ar gas chemistry containing additive nitrogen. CH4/N2/H2 (5%/0.5%/94.5%) and CH4/N2/H2/Ar (0.5%/5%/6%/88.5%) gas mixtures were compared as the precursor gas. Molybdenum and tungsten were compared as cathode material. Discharge voltage and current were 480 V/45 A and 320 V/60 A, for respective gas chemistry. Chamber pressure and substrate temperature were 110-150 Torr and 750-850 °C, respectively. The film was characterized by near edge x-ray absorption fine structure spectroscopy, x-ray diffraction, high-resolution transmission electron microscope, electron energy loss spectroscopy, and high-resolution scanning electron microscope. We have demonstrated that (1) elimination of the positive column, by adopting very small interelectrode distance, gave some important and beneficial effects; (2) the plasma stability and impurity incorporation was sensitive to the cathode material and the precursor gas; (3) using the conventional CH4/H2 precursor gas and tungsten cathode, the mirror-smooth 4 in. UNCD film of excellent phase-purity and grain size below 10 nm could be deposited even in the absence of the positive column. The high electric field in the unusually narrow interelectrode space and the consequent high electron kinetic energy, in conjunction with the unusually high electron current thereof, directed to the substrate, i.e., the anode, was proposed to be the source of the grain refinement to achieve UNCD at such high chamber pressure around 110-150 Torr, in the absence of the usual ion bombardment assistance.

  12. Nanostructured diamond layers enhance the infrared spectroscopy of biomolecules.

    PubMed

    Kozak, Halyna; Babchenko, Oleg; Artemenko, Anna; Ukraintsev, Egor; Remes, Zdenek; Rezek, Bohuslav; Kromka, Alexander

    2014-03-01

    We report on the fabrication and practical use of high-quality optical elements based on Au mirrors coated with diamond layers with flat, nanocolumnar, and nanoporous morphologies. Diamond layers (100 nm thickness) are grown at low temperatures (about 300 °C) from a methane, carbon dioxide, and hydrogen gas mixture by a pulsed microwave plasma system with linear antennas. Using grazing angle reflectance (GAR) Fourier transform infrared spectroscopy with p-polarized light, we compare the IR spectra of fetal bovine serum proteins adsorbed on diamond layers with oxidized (hydrophilic) surfaces. We show that the nanoporous diamond layers provide IR spectra with a signal gain of about 600% and a significantly improved sensitivity limit. This is attributed to its enhanced internal surface area. The improved sensitivity enabled us to distinguish weak infrared absorption peaks of <10-nm-thick protein layers and thereby to analyze the intimate diamond-molecule interface.

  13. Diamond MEMS: wafer scale processing, devices, and technology insertion

    NASA Astrophysics Data System (ADS)

    Carlisle, J. A.

    2009-05-01

    Diamond has long held the promise of revolutionary new devices: impervious chemical barriers, smooth and reliable microscopic machines, and tough mechanical tools. Yet it's been an outsider. Laboratories have been effectively growing diamond crystals for at least 25 years, but the jump to market viability has always been blocked by the expense of diamond production and inability to integrate with other materials. Advances in chemical vapor deposition (CVD) processes have given rise to a hierarchy of carbon films ranging from diamond-like carbon (DLC) to vapor-deposited diamond coatings, however. All have pros and cons based on structure and cost, but they all share some of diamond's heralded attributes. The best performer, in theory, is the purest form of diamond film possible, one absent of graphitic phases. Such a material would capture the extreme hardness, high Young's modulus and chemical inertness of natural diamond. Advanced Diamond Technologies Inc., Romeoville, Ill., is the first company to develop a distinct chemical process to create a marketable phase-pure diamond film. The material, called UNCD® (for ultrananocrystalline diamond), features grain sizes from 3 to 300 nm in size, and layers just 1 to 2 microns thick. With significant advantages over other thin films, UNCD is designed to be inexpensive enough for use in atomic force microscopy (AFM) probes, microelectromechanical machines (MEMS), cell phone circuitry, radio frequency devices, and even biosensors.

  14. Structural transformation of implanted diamond layers during high temperature annealing

    NASA Astrophysics Data System (ADS)

    Rubanov, S.; Fairchild, B. A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-12-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  15. Effects of disorder state and interfacial layer on thermal transport in copper/diamond system

    NASA Astrophysics Data System (ADS)

    Sinha, V.; Gengler, J. J.; Muratore, C.; Spowart, J. E.

    2015-02-01

    The characterization of Cu/diamond interface thermal conductance (hc) along with an improved understanding of factors affecting it are becoming increasingly important, as Cu-diamond composites are being considered for electronic packaging applications. In this study, ˜90 nm thick Cu layers were deposited on synthetic and natural single crystal diamond substrates. In several specimens, a Ti-interface layer of thickness ≤3.5 nm was sputtered between the diamond substrate and the Cu top layer. The hc across Cu/diamond interfaces for specimens with and without a Ti-interface layer was determined using time-domain thermoreflectance. The hc is ˜2× higher for similar interfacial layers on synthetic versus natural diamond substrate. The nitrogen concentration of synthetic diamond substrate is four orders of magnitude lower than natural diamond. The difference in nitrogen concentration can lead to variations in disorder state, with a higher nitrogen content resulting in a higher level of disorder. This difference in disorder state potentially can explain the variations in hc. Furthermore, hc was observed to increase with an increase of Ti-interface layer thickness. This was attributed to an increased adhesion of Cu top layer with increasing Ti-interface layer thickness, as observed qualitatively in the current study.

  16. Effects of disorder state and interfacial layer on thermal transport in copper/diamond system

    SciTech Connect

    Sinha, V.; Gengler, J. J.; Muratore, C.; Spowart, J. E.

    2015-02-21

    The characterization of Cu/diamond interface thermal conductance (h{sub c}) along with an improved understanding of factors affecting it are becoming increasingly important, as Cu-diamond composites are being considered for electronic packaging applications. In this study, ∼90 nm thick Cu layers were deposited on synthetic and natural single crystal diamond substrates. In several specimens, a Ti-interface layer of thickness ≤3.5 nm was sputtered between the diamond substrate and the Cu top layer. The h{sub c} across Cu/diamond interfaces for specimens with and without a Ti-interface layer was determined using time-domain thermoreflectance. The h{sub c} is ∼2× higher for similar interfacial layers on synthetic versus natural diamond substrate. The nitrogen concentration of synthetic diamond substrate is four orders of magnitude lower than natural diamond. The difference in nitrogen concentration can lead to variations in disorder state, with a higher nitrogen content resulting in a higher level of disorder. This difference in disorder state potentially can explain the variations in h{sub c}. Furthermore, h{sub c} was observed to increase with an increase of Ti-interface layer thickness. This was attributed to an increased adhesion of Cu top layer with increasing Ti-interface layer thickness, as observed qualitatively in the current study.

  17. Method of forming fluorine-bearing diamond layer on substrates, including tool substrates

    DOEpatents

    Chang, R. P. H.; Grannen, Kevin J.

    2002-01-01

    A method of forming a fluorine-bearing diamond layer on non-diamond substrates, especially on tool substrates comprising a metal matrix and hard particles, such as tungsten carbide particles, in the metal matrix. The substrate and a fluorine-bearing plasma or other gas are then contacted under temperature and pressure conditions effective to nucleate fluorine-bearing diamond on the substrate. A tool insert substrate is treated prior to the diamond nucleation and growth operation by etching both the metal matrix and the hard particles using suitable etchants.

  18. Lamb Wave Characteristics of Composite Plates Including a Diamond Layer with Distinct Electrode Arrangements

    NASA Astrophysics Data System (ADS)

    Chen, Yung-Yu

    2013-07-01

    Diamond films have been utilized to develop surface acoustic wave filters and micromechanical resonators because of the highest acoustic wave velocity and largest product of frequency and quality factor (f.Q) of diamond among all materials. A theoretical analysis of Lamb wave characteristics in multilayer piezoelectric plates including a diamond layer is presented in this paper. Formulae for effective permittivity are derived using the transfer matrix method and are further employed to calculate Lamb wave phase velocity dispersions. The electromechanical coupling coefficients (ECCs) are also calculated exactly by Green's function method. Detailed calculations are carried out for ZnO/diamond and AlN/diamond composite plates with four distinct electrode arrangements. Results show that the ZnO/diamond structure yields a phase velocity of 6420 m/s and a large ECC of 7.41%, which makes it suitable for high-frequency wideband filter applications. Moreover, in the AlN/diamond structure, the S0 mode exhibits a large phase velocity of up to 10.3 km/s and a moderate ECC of 1.97%. Such favorable characteristics are expected to contribute to the development of AlN/diamond Lamb wave oscillators operating at approximately 5-10 GHz without the need for a sub-micrometer-resolution lithographic process. Therefore, both ZnO/diamond and AlN/diamond Lamb wave devices are highly promising candidates for RF devices in modern communication systems with advantages over conventional surface acoustic wave devices.

  19. Effect of diamond trip geometries on boundary layer transition for hypersonic inlet

    NASA Astrophysics Data System (ADS)

    Zhao, H. Y.; Ni, H. L.; Zhang, Z. M.; Yi, M. R.

    2016-10-01

    In order to grasp the effect of diamond trip geometries on boundary layer transition of hypersonic inlet, an experiment at Mach number 6 in a hypersonic wind tunnel was performed for a hypersonic inlet. The heat transfers at the inlet wall were measured through the infrared thermography. The transition region was judged by the comparison of heat transfer between experiment and computation. Ten diamond forced transition trips were designed according to Modern Design of Experiments. The experimental results shown that the effect order of trip geometries on transition region were the trip height, distance between diamond elements and diagonal length of diamond element from the largest to the smallest. Transition region moved forward to the model tip with increasing trip height or trip length, or with decreasing distance between diamond elements, or with increasing diagonal length of element. The optimized configuration was obtained for diamond forced-transition trip when the optimization object was transition region.

  20. Buffer layers for deposition of superconducting YBaCuO thin film on polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P.; Cui, G. J.; Lincoln, B. A.; Kirlin, Peter S.

    1992-09-01

    In an attempt to combine the properties of high temperature superconductors with the high thermal conductivity and low specific heat of diamond, we have explored the deposition of in- situ YBa(subscript 2)Cu(subscript 3)O(subscript 7-(delta) ) (YBCO) superconducting films on polycrystalline diamond thin films. We demonstrate for the first time superconducting YBCO films on diamond employing multiple layer buffer layer systems. Three different composite buffer layer systems were explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si(subscript 3)N(subscript 4)/YSZ/YBCO, and (3) Diamond/SiO(subscript 2)/YSZ/YBCO. Adherent thin Zr films were deposited by dc sputtering on the diamond films at 450 to 820 degree(s)C. The yttria stabilized zirconia (YSZ) was deposited by reactive RF sputtering at 680 to 750 degree(s)C. The Si(subscript 3)N(subscript 4) and SiO(subscript 2) were also deposited by on-axis RF sputtering at 400 to 700 degree(s)C. YBCO films were grown on the buffer layers by off-axis RF sputtering at substrate temperatures between 690 degree(s)C and 750 degree(s)C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric far IR detectors and paves the way for the use of HTSC as a high frequency interconnect metallization on thick diamond film based multichip modules.

  1. Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel

    NASA Astrophysics Data System (ADS)

    Zhang, Zhenyu; Guo, Liangchao; Cui, Junfeng; Wang, Bo; Kang, Renke; Guo, Dongming

    2016-10-01

    Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 μm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding.

  2. Nanoscale solely amorphous layer in silicon wafers induced by a newly developed diamond wheel

    PubMed Central

    Zhang, Zhenyu; Guo, Liangchao; Cui, Junfeng; Wang, Bo; Kang, Renke; Guo, Dongming

    2016-01-01

    Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline damaged layer beneath. The thicknesses of amorphous layer are 43 and 48 nm at infeed rates of 8 and 15 μm/min, respectively, which is verified using HRTEM. Diamond-cubic Si-I phase is verified in Si wafers using selected area electron diffraction patterns, indicating the absence of high pressure phases. Ceria plays an important role in the diamond wheel for achieving ultrasmooth and bright surfaces using ultraprecision grinding. PMID:27734934

  3. Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

    SciTech Connect

    Buijnsters, J. G.; Vazquez, L.; Celis, J. P.

    2010-11-15

    A method for the nucleation enhancement of nanocrystalline diamond (NCD) films on silicon substrates at low temperature is discussed. A sputter deposition of a Mo seed layer with thickness 50 nm on Si substrates was applied followed by an ultrasonic seeding step with nanosized detonation diamond powders. Hot-filament chemical vapor deposition (HF-CVD) was used to nucleate and grow NCD films on substrates heated up at 550 deg. C. The nucleation of diamond and the early stages of NCD film formation were investigated at different methane percentages in methane/hydrogen gas mixtures by atomic force microscopy, micro-Raman spectroscopy, scanning electron microscopy, and grazing incidence x-ray analyses in order to gain specific insight in the nucleation process of NCD films. The nucleation kinetics of diamond on the Mo-coated Si substrates was found to be up to ten times higher than on blank Si substrates. The enhancement of the nucleation of diamond on thin Mo interlayers results from two effects, namely, (a) the nanometer rough Mo surface shows an improved embedding of ultrasonically introduced nanosized diamond seeds that act as starting points for the diamond nucleation during HF-CVD and (b) the rapid carbonization of the Mo surface causes the formation of Mo{sub 2}C onto which diamond easily nucleates. The diamond nucleation density progressively increases at increasing methane percentages and is about 5x10{sup 10} cm{sup -2} at 4.0% methane. The improved nucleation kinetics of diamond on Mo interlayers facilitates the rapid formation of NCD films possessing a very low surface roughness down to {approx}6 nm, and allows a submicron thickness control.

  4. Epitaxial synthesis of diamond layers on a monocrystalline diamond substrate in a torch microwave plasmatron

    SciTech Connect

    Sergeichev, K. F. Lukina, N. A.

    2011-12-15

    The epitaxial growth of a diamond single-crystal film in a torch microwave discharge excited by a magnetron of a domestic microwave oven with the power of {<=}1 kW in an argon-hydrogen-methane mixture with a high concentration of methane (up to 25% with respect to hydrogen) at atmospheric pressure on a sub-strate of a synthetic diamond single crystal (HPHP) with the orientation (100) and 4 Multiplication-Sign 4 mm in size is obtained. A discharge with the torch diameter of {approx}2 mm and the concentration of the microwave power absorbed in the torch volume of >10{sup 3} W/cm{sup 3} is shown to be effective for epitaxial enlargement of a single crystal of synthetic diamond. The structure of the deposited film with the thickness up to 10 {mu}m with high-quality morphology is investigated with an optical microscope as well as using the methods of the Raman scattering and scanning electron microscopy.

  5. Hexagonal Diamonds (Lonsdaleite) Discovered in the K/T Impact Layer in Spain and New Zealand

    NASA Astrophysics Data System (ADS)

    Bunch, T. E.; Wittke, J. H.; West, A.; Kennett, J. P.; Kennett, D. J.; Que Hee, S. S.; Wolbach, W. S.; Stich, A.; Mercer, C.; Weaver, J. C.

    2008-12-01

    We present the first evidence from Cretaceous-Tertiary (K/T) boundary clay and rock for shocked hexagonal nanodiamonds (lonsdaleite), these being found in concentrations greater than 50 ppm at Needles Point, New Zealand, and Caravaca, Spain. This is also the first evidence for K/T diamonds of any kind outside of North America. No diamonds were detected immediately above or below the impact layer. Cubic diamonds have been reported earlier from North American K/T sediments by Carlisle and Braman (1991; 45 ppm) and Hough et al. (1997; 18 ppm), but lonsdaleite was not detected. Carlisle and Braman suggested that the cubic diamonds arrived already formed within the impactor, but Hough argued that they were shock-produced by the impact with Earth. Hence, it is not yet clear that K/T cubic diamonds were formed through shock. Lonsdaleite does not co-occur with terrestrial diamonds but is found with cubic diamonds in ET impact craters (e.g., Popigai, Sudbury). Both also have been reported in the impact layer of the proposed Younger Dryas impact event at 12.9 ka. Lonsdaleite is formed by shocking carbonaceous material, e. g., graphite, under extreme conditions of pressure and temperature (more than 15 GPa at more than 1000° C), thus making this mineral an excellent impact-shock indicator (DeCarli, 2002). Although lonsdaleite is also contained in meteorites, such as ureilites, there appears to be a consensus of opinion that crater-related lonsdaleite formed during ET impact. K/T sediment samples were acquired from the boundary layer, as well as above and below. To extract the diamonds from the sediments, we utilized the protocol from Amari (1994) and Huss and Lewis (1995), but modified their methodology after determining that phosphoric and perchloric acids oxidize metastable lonsdaleite. We extracted the diamonds successfully after eliminating those acids, which may explain why lonsdaleite was not apparent in extractions by others. The extracted lonsdaleite was analyzed by

  6. Enhancing secondary yield of a diamond amplifier using a nitrogen layer

    SciTech Connect

    Jensen, Kevin L.; Shaw, Jonathan L.; Yater, Joan E.; Pate, Bradford B.

    2015-06-07

    A thin nitrogen-doped layer less than 4% of the total thickness in diamond thin film amplifier is shown to reduce losses of generated secondaries to the back contact, generated by a high energy primary electron beam compared to a thin film without the substitutional nitrogen layer modification. Simulation indicates that the losses due to absorption of diffusing electrons by the back contact may be considerably reduced by a factor of 2 (depending on field across the film, width of the nitrogen layer, and boron doping level), thereby mitigating undesirable effects associated with trace amounts of boron.

  7. Demonstration of a three-dimensional photonic crystal nanocavity in a 〈110〉-layered diamond structure

    SciTech Connect

    Tajiri, T.; Takahashi, S.; Ota, Y.; Tatebayashi, J.; Iwamoto, S.; Arakawa, Y.

    2015-08-17

    We experimentally demonstrate a three-dimensional photonic crystal (3D PC) nanocavity in a 〈110〉-layered diamond structure with a quality factor (Q-factor) of 12 800 at a wavelength of 1.1 μm. The observed Q is 1.2 times higher than that of a 3D PC nanocavity in a woodpile structure with the same in-plane size and the same number of stacked layers. This result indicates the potential importance of the 〈110〉-layered diamond structure for getting high Q 3D PC nanocavities within a limited in-plane space.

  8. Calibration of an isotopically enriched carbon-13 layer pressure sensor to 156 GPa in a diamond anvil cell

    SciTech Connect

    Qiu,W.; Baker, P.; Velisavljevic, N.; Vohra, Y.; Weir, S.

    2006-01-01

    An isotopically enriched {sup 13}C homoepitaxial diamond layer of 6{+-}1 {mu}m thickness was grown on top of a brilliant cut diamond anvil by a microwave plasma chemical vapor deposition process for application as a pressure sensor. This isotopically enriched diamond tip was then used in conjunction with a natural isotopic abundance diamond anvil to generate high pressure on the sample. We provide a calibration for the {sup 13}C Raman mode of this extremely thin epitaxial layer to 156 GPa using ruby fluorescence and the equation of state of copper as secondary pressure standards. The nonlinear calibration of the {sup 13}C Raman mode pressure sensor is compared with similar calibrations of {sup 12}C Raman edge and a good agreement is obtained. The Raman signal from the {sup 13}C epitaxial layer remained a distinct singlet to 156 GPa, and pressure calibration is independent of sample mechanical strength or the diamond anvil geometry. The use of even thinner layer would allow calibration further into ultrahigh pressure regime where the use of other optical sensors has proven to be difficult.

  9. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

    NASA Astrophysics Data System (ADS)

    Zhao, Jing; Liu, Jiangwei; Sang, Liwen; Liao, Meiyong; Coathup, David; Imura, Masataka; Shi, Baogui; Gu, Changzhi; Koide, Yasuo; Ye, Haitao

    2016-01-01

    A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 μF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond metal-oxide semiconductor field effect transistors are anticipated.

  10. Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

    SciTech Connect

    Bhattacharyya, Somnath

    2014-08-18

    Polar angle-dependence of magneto-resistance (AMR) in heavily nitrogen-incorporated ultra-nanocrystalline diamond (UNCD) films is recorded by applying high magnetic fields, which shows strong anisotropic features at low temperatures. The temperature-dependence of MR and AMR can reveal transport in the weak-localization regime, which is explained by using a superlattice model for arbitrary values of disorder and angles. While a propagative Fermi surface model explains the negative MR features for low degree of disorder the azimuthal angle-dependent MR shows field dependent anisotropy due to the aligned conducting channels on the layers normal to film growth direction. The analysis of MR and AMR can extract the temperature dependence of dephasing time with respect to the elastic scattering time which not only establishes quasi-two dimensional features in this system but also suggests a potential application in monitoring the performance of UNCD based quantum devices.

  11. N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Auciello, Orlando H.; Carlisle, John A.

    2004-09-21

    An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10.sup.19 atoms/cm.sup.3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

  12. Presence of all Three Allotropes of Impact-Diamonds in the Younger Dryas Onset Layer (YDB) Across N America and NW Europe

    NASA Astrophysics Data System (ADS)

    West, A.; Kennett, J. P.; Kennett, D. J.; Que Hee, S. S.; Wolbach, W. S.; Stich, A.; Bunch, T. E.; Wittke, J. H.; Mercer, C.; Sellers, M.; Culleton, B. J.; Erlandson, J. M.; Johnson, J. R.; Stafford, T. W.; Weaver, J. C.; West, G.

    2008-12-01

    We report the discovery of all three diamond allotropes (cubic diamond, lonsdaleite, and n-diamond) in an extraterrestrial (ET) impact layer (the YDB), dating to the Younger Dryas onset at 12.9 ka. YDB diamonds are distributed broadly across N America and NW Europe at 15 sites spanning 9,000 km or 23 percent of Earth's circumference. N-diamonds and lonsdaleite, or hexagonal diamond, do not co-occur with terrestrial diamonds, but are found in meteorites. Lonsdaleite is found on Earth only in association with known ET impacts, and thus, is a definitive impact indicator. The diamonds were identified by transmission electron microscopy (TEM) using selected area diffraction (SAED), which display reflections corresponding to the following lattice planar spacings definitive of diamond: (1) cubic: 2.06, 1.26, 1.07, and 0.89 A; (2) lonsdaleite: 2.184, 1.261, 1.092, and 0.826 A; and (3) n-diamond: 2.06, 1.26, 1.07, and 0.89 A, plus "forbidden" reflections of 1.78, 1.04, and 0.796 A. Nanodiamonds are rounded to highly angular, and range in size from 1 to 1700 nm with most between 1 and 50 nm. Concentrations are up to 3700 ppb, equaling more than 1 billion diamonds per cm3 of sediment (comparable to K/T levels of 3600 ppb). No diamonds were detected above or below the YDB layer at any site tested. These diamonds could not have formed from volcanic activity, because they combust at temperatures above 500° C in the presence of atmospheric levels of oxygen, and micrometeoritic diamonds are similarly destroyed. Also, the diamonds could not have accumulated from the constant rain of micrometeoritic debris, because multi-billions occur in YDB layer samples, but yet none have been found in non-YDB strata dating from 55,000 RCYBP to present. YDB diamonds are associated with abundance peaks in magnetic spherules, carbon spherules, soot, and iridium, which can peak in impact layers of known ET events, such as the K/T and the 1908 airburst at Tunguska, Siberia. Furthermore, a high

  13. Diamond-Like-Carbon LC-Alignment Layers for Application in LCOS Microdisplays

    SciTech Connect

    Bol,A.; Dvorak, J.; Arena, D.

    2005-01-01

    To improve the lifetime and yield of LCOS microdisplays, non-contact LC alignment techniques using inorganic materials are under investigation. This report focuses on oblique ion-beam treatment of diamond-like carbon (DLC) layers, and in particular on the influence of the ion dose on the LC alignment on DLC, keeping the ion-beam angle (40 degrees) and ion-beam energy (170 eV) the same. LC alignment on ion-milled DLC layers is uniform if the ion dose is between 3.8 x 10{sup -4} C/cm{sup 2} and 5.5x10{sup -3} C/cm{sup 2}. Above and below this ion dose range, non-uniform alignment is observed. NEXAFS experiments show that this is caused by lack of molecular anisotropy on the surface of the ion-milled DLC layers. By varying the ion dose between 3.8 x 10{sup -4} C/cm{sup 2} and 5.5 x 10{sup -3} C/cm{sup 2}, LC molecules have an average pre-tilt between 3 and 5 degrees, which is within the desired range for application in LCOS microdisplays. The lifetime of the LCOS microdisplays with ion-milled DLC for projection-TV application is, however, shorter than the lifetime of microdisplays with PI layers. Ion milling probably creates a reactive surface that is unstable under the high light fluxes used in projection TVs. A solution for this problem could be chemical passivation of the ion-milled alignment layers. Initial experiments with passivation of ion-milled PI resulted in an increase in lifetime, but the lifetime after passivation was still lower than the lifetime of rubbed PI layers (factor 0.7). Nevertheless, ion-milling of DLC or PI can be a good alternative LC alignment technique in other LCD applications. LC-alignment layers based on inorganic layers such as obliquely deposited SiO{sub 2} films would be a better option for application in LCOS microdisplays due to their higher light stability.

  14. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors

    PubMed Central

    Wang, Jianwei; Zhang, Yong

    2016-01-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430

  15. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors.

    PubMed

    Wang, Jianwei; Zhang, Yong

    2016-01-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III-V, and II-VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain-low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side. PMID:27090430

  16. Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jianwei; Zhang, Yong

    2016-04-01

    When coming to identify new 2D materials, our intuition would suggest us to look from layered instead of 3D materials. However, since graphite can be hypothetically derived from diamond by stretching it along its [111] axis, many 3D materials can also potentially be explored as new candidates for 2D materials. Using a density functional theory, we perform a systematic study over the common Group IV, III–V, and II–VI semiconductors along different deformation paths to reveal new structures that are topologically connected to but distinctly different from the 3D parent structure. Specifically, we explore two major phase transition paths, originating respectively from wurtzite and NiAs structure, by applying compressive and tensile strain along the symmetry axis, and calculating the total energy changes to search for potential metastable states, as well as phonon spectra to examine the structural stability. Each path is found to further split into two branches under tensile strain–low buckled and high buckled structures, which respectively lead to a low and high buckled monolayer structure. Most promising new layered or planar structures identified include BeO, GaN, and ZnO on the tensile strain side, Ge, Si, and GaP on the compressive strain side.

  17. Three-dimensional kinetic Monte Carlo simulations of diamond chemical vapor deposition.

    PubMed

    Rodgers, W J; May, P W; Allan, N L; Harvey, J N

    2015-06-01

    A three-dimensional kinetic Monte Carlo model has been developed to simulate the chemical vapor deposition of a diamond (100) surface under conditions used to grow single-crystal diamond (SCD), microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films. The model includes adsorption of CHx (x = 0, 3) species, insertion of CHy (y = 0-2) into surface dimer bonds, etching/desorption of both transient adsorbed species and lattice sidewalls, lattice incorporation, and surface migration but not defect formation or renucleation processes. A value of ∼200 kJ mol(-1) for the activation Gibbs energy, ΔG(‡) etch, for etching an adsorbed CHx species reproduces the experimental growth rate accurately. SCD and MCD growths are dominated by migration and step-edge growth, whereas in NCD and UNCD growths, migration is less and species nucleate where they land. Etching of species from the lattice sidewalls has been modelled as a function of geometry and the number of bonded neighbors of each species. Choice of appropriate parameters for the relative decrease in etch rate as a function of number of neighbors allows flat-bottomed etch pits and/or sharp-pointed etch pits to be simulated, which resemble those seen when etching diamond in H2 or O2 atmospheres. Simulation of surface defects using unetchable, immobile species reproduces other observed growth phenomena, such as needles and hillocks. The critical nucleus for new layer growth is 2 adjacent surface carbons, irrespective of the growth regime. We conclude that twinning and formation of multiple grains rather than pristine single-crystals may be a result of misoriented growth islands merging, with each island forming a grain, rather than renucleation caused by an adsorbing defect species. PMID:26049516

  18. Three-dimensional kinetic Monte Carlo simulations of diamond chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rodgers, W. J.; May, P. W.; Allan, N. L.; Harvey, J. N.

    2015-06-01

    A three-dimensional kinetic Monte Carlo model has been developed to simulate the chemical vapor deposition of a diamond (100) surface under conditions used to grow single-crystal diamond (SCD), microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films. The model includes adsorption of CHx (x = 0, 3) species, insertion of CHy (y = 0-2) into surface dimer bonds, etching/desorption of both transient adsorbed species and lattice sidewalls, lattice incorporation, and surface migration but not defect formation or renucleation processes. A value of ˜200 kJ mol-1 for the activation Gibbs energy, ΔG‡etch, for etching an adsorbed CHx species reproduces the experimental growth rate accurately. SCD and MCD growths are dominated by migration and step-edge growth, whereas in NCD and UNCD growths, migration is less and species nucleate where they land. Etching of species from the lattice sidewalls has been modelled as a function of geometry and the number of bonded neighbors of each species. Choice of appropriate parameters for the relative decrease in etch rate as a function of number of neighbors allows flat-bottomed etch pits and/or sharp-pointed etch pits to be simulated, which resemble those seen when etching diamond in H2 or O2 atmospheres. Simulation of surface defects using unetchable, immobile species reproduces other observed growth phenomena, such as needles and hillocks. The critical nucleus for new layer growth is 2 adjacent surface carbons, irrespective of the growth regime. We conclude that twinning and formation of multiple grains rather than pristine single-crystals may be a result of misoriented growth islands merging, with each island forming a grain, rather than renucleation caused by an adsorbing defect species.

  19. Effects of protein inter-layers on cell-diamond FET characteristics.

    PubMed

    Rezek, Bohuslav; Krátká, Marie; Kromka, Alexander; Kalbacova, Marie

    2010-12-15

    Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors (FET) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated FETs based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum (FBS) proteins and osteoblastic SAOS-2 cells on diamond electronic properties. FBS proteins adsorbed on the diamond FETs permanently decrease diamond conductivity as reflected by the -45 mV shift of the FET transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 mV. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the FBS proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.

  20. Characterization of tribo-layer formed during sliding wear of SiC ball against nanocrystalline diamond coatings

    SciTech Connect

    Dumpala, Ravikumar; Kumar, N.; Samji, Sunil Kumar; Dash, S.; Ramamoorthy, B.; Ramachandra Rao, M.S.

    2014-09-15

    Tribo-layer formation and frictional characteristics of the SiC ball were studied with the sliding test against nanocrystalline diamond coating under atmospheric test conditions. Unsteady friction coefficients in the range of 0.04 to 0.1 were observed during the tribo-test. Friction and wear characteristics were found to be influenced by the formation of cohesive tribo-layer (thickness ∼ 1.3 μm) in the wear track of nanocrystalline diamond coating. Hardness of the tribo-layer was measured using nanoindentation technique and low hardness of ∼ 1.2 GPa was observed. The presence of silicon and oxygen in the tribo-layer was noticed by the energy dispersive spectroscopy mapping and the chemical states of the silicon were analyzed using X-ray photoelectron spectroscopy. Large amount of oxygen content in the tribo-layer indicated tribo-oxidation wear mechanism. - Highlights: • Sliding wear and friction characteristics of SiC were studied against NCD coating. • Silicon oxide tribo-layer formation was observed in the NCD coating wear track. • Low hardness 1.2 GPa of tribo-layer was measured using nanoindentation technique. • Chemical states of silicon were analyzed using X-ray photoelectron spectroscopy.

  1. Quartz Crystal Micro-Balance Gas Sensor with Ink-Jet Printed Nano-Diamond Sensitive Layer

    NASA Astrophysics Data System (ADS)

    Kulha, Pavel; Kroutil, Jiří; Laposa, Alexandr; Procházka, Václav; Husák, Miroslav

    2016-01-01

    the paper presents fabrication and characterization of a Quartz Crystal Microbalance based gas sensor with a diamond powder sensitive layer deposited using the ink-jet printing technique. The sensor was exposed to a low concentration of ammonia, acetone vapors and different levels of humidity. Impedance characteristics close to the natural resonant frequency of 10 MHz were examined. The sensor exhibits significant shifts in serial resonant frequency under different gas environments.

  2. Thermally stable diamond brazing

    DOEpatents

    Radtke, Robert P.

    2009-02-10

    A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

  3. Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

    PubMed

    Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

    2012-06-01

    Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation. PMID:22905536

  4. Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

    PubMed

    Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

    2012-06-01

    Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

  5. Diamond heteroepitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Tang, Yung-Hsiu

    This dissertation describes improvements in the growth of single crystal diamond by microwave plasma-assisted chemical vapor deposition (CVD). Heteroepitaxial (001) diamond was grown on 1 cm. 2 a-plane sapphiresubstrates using an epitaxial (001) Ir thin-film as a buffer layer. Low-energy ion bombardment of the Ir layer, a process known as bias-enhanced nucleation, is a key step in achieving a high density of diamond nuclei. Bias conditions were optimized to form uniformly-high nucleation densities across the substrates, which led to well-coalesced diamond thin films after short growth times. Epitaxial lateral overgrowth (ELO) was used as a means of decreasing diamond internal stress by impeding the propagation of threading dislocations into the growing material. Its use in diamond growth requires adaptation to the aggressive chemical and thermal environment of the hydrogen plasma in a CVD reactor. Three ELO variants were developed. The most successful utilized a gold (Au) mask prepared by vacuum evaporation onto the surface of a thin heteroepitaxial diamond layer. The Au mask pattern, a series of parallel stripes on the micrometer scale, was produced by standard lift-off photolithography. When diamond overgrows the mask, dislocations are largely confined to the substrate. Differing degrees of confinement were studied by varying the stripe geometry and orientation. Significant improvement in diamond quality was found in the overgrown regions, as evidenced by reduction of the Raman scattering linewidth. The Au layer was found to remain intact during diamond overgrowth and did not chemically bond with the diamond surface. Besides impeding the propagation of threading dislocations, it was discovered that the thermally-induced stress in the CVD diamond was significantly reduced as a result of the ductile Au layer. Cracking and delamination of the diamond from the substrate was mostly eliminated. When diamond was grown to thicknesses above 0.1 mm it was found that

  6. Using stepped anvils to make even insulation layers in laser-heated diamond-anvil cell samples.

    PubMed

    Du, Zhixue; Gu, Tingting; Dobrosavljevic, Vasilije; Weir, Samuel T; Falabella, Steve; Lee, Kanani K M

    2015-09-01

    We describe a method to make even insulation layers for high-pressure laser-heated diamond-anvil cell samples using stepped anvils. The method works for both single-sided and double-sided laser heating using solid or fluid insulation. The stepped anvils are used as matched pairs or paired with a flat culet anvil to make gasket insulation layers and not actually used at high pressures; thus, their longevity is ensured. We compare the radial temperature gradients and Soret diffusion of iron between self-insulating samples and samples produced with stepped anvils and find that less pronounced Soret diffusion occurs in samples with even insulation layers produced by stepped anvils.

  7. Using stepped anvils to make even insulation layers in laser-heated diamond-anvil cell samples

    NASA Astrophysics Data System (ADS)

    Du, Zhixue; Gu, Tingting; Dobrosavljevic, Vasilije; Weir, Samuel T.; Falabella, Steve; Lee, Kanani K. M.

    2015-09-01

    We describe a method to make even insulation layers for high-pressure laser-heated diamond-anvil cell samples using stepped anvils. The method works for both single-sided and double-sided laser heating using solid or fluid insulation. The stepped anvils are used as matched pairs or paired with a flat culet anvil to make gasket insulation layers and not actually used at high pressures; thus, their longevity is ensured. We compare the radial temperature gradients and Soret diffusion of iron between self-insulating samples and samples produced with stepped anvils and find that less pronounced Soret diffusion occurs in samples with even insulation layers produced by stepped anvils.

  8. Highly stable redox-active molecular layers by covalent grafting to conductive diamond.

    PubMed

    Ruther, Rose E; Rigsby, Matthew L; Gerken, James B; Hogendoorn, Stephanie R; Landis, Elizabeth C; Stahl, Shannon S; Hamers, Robert J

    2011-04-20

    We demonstrate a modular "click"-based functionalization scheme that allows inexpensive conductive diamond samples to serve as an ultrastable platform for surface-tethered electrochemically active molecules stable out to ∼1.3 V vs Ag/AgCl. We have cycled surface-tethered Ru(tpy)(2) to this potential more than 1 million times with little or no degradation in propylene carbonate and only slightly reduced stability in water and acetonitrile. PMID:21438578

  9. Band offsets of Al{sub 2}O{sub 3} and HfO{sub 2} oxides deposited by atomic layer deposition technique on hydrogenated diamond

    SciTech Connect

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2012-12-17

    High-k oxide insulators (Al{sub 2}O{sub 3} and HfO{sub 2}) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 Degree-Sign C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 {+-} 0.2 and 2.6 {+-} 0.2 eV for Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions, respectively. Band gaps of the Al{sub 2}O{sub 3} and HfO{sub 2} have been determined to be 7.2 {+-} 0.2 and 5.4 {+-} 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al{sub 2}O{sub 3}/H-diamond and HfO{sub 2}/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 {+-} 0.2 and 2.7 {+-} 0.2 eV, respectively.

  10. Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

    PubMed

    Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

    2013-08-14

    We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

  11. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    PubMed

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  12. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2001-01-01

    An overview of the industrial diamond industry is provided. More than 90 percent of the industrial diamond consumed in the U.S. and the rest of the world is manufactured diamond. Ireland, Japan, Russia, and the U.S. produce 75 percent of the global industrial diamond output. In 2000, the U.S. was the largest market for industrial diamond. Industrial diamond applications, prices for industrial diamonds, imports and exports of industrial diamonds, the National Defense Stockpile of industrial diamonds, and the outlook for the industrial diamond market are discussed.

  13. Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Taro; Reusch, Markus; Holc, Katarzyna; Iankov, Dimitre; Zuerbig, Verena; Zukauskaite, Agne; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim

    2016-04-01

    A great potential of the use of aluminum nitride (AlN) to enhance the actuation of nanocrystalline diamond (NCD) microelectromechanical system disk resonators is revealed. A disk resonator with a unimorph (AlN/NCD) structure is fabricated by depositing a c-axis oriented AlN on a capacitive NCD disk resonator. The unimorph resonator is piezoelectrically actuated with flexural whispering gallery modes with a relatively large electrode gap spacing, i.e., the spacing which is greater than 1 μm, although this is not possible for the capacitive NCD disk resonator. This result is explained by a finite element method simulation where the piezoelectric actuation turns out to be more effective than the capacitive actuation when the electrode gap spacing is >0.8 μm. The simulation also shows that the electrode gap spacing required for the capacitive actuation to be more effective than the piezoelectric actuation exponentially decreases when the resonator dimension is scaled down for higher frequency operations. Our study indicates that the use of AlN is promising to decrease impedance levels of NCD disk resonators especially for their higher frequency operations.

  14. Diamond-Cutter Drill Bits

    SciTech Connect

    1995-11-01

    Geothermal Energy Program Office of Geothermal and Wind Technologies Diamond-Cutter Drill Bits Diamond-cutter drill bits cut through tough rock quicker, reducing the cost of drilling for energy resources The U.S. Department of Energy (DOE) contributed markedly to the geothermal, oil, and gas industries through the development of the advanced polycrystalline diamond compact (PDC) drill bit. Introduced in the 1970s by General Electric Company (GE), the PDC bit uses thin, diamond layers bonded to t

  15. Surface damages in diamond by Ar/O{sub 2} plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers

    SciTech Connect

    Denisenko, A.; Pietzka, C.; Scharpf, J.; Kohn, E.; Romanyuk, A.

    2010-10-15

    Epitaxial single crystal and boron-doped diamond layers were exposed to reactive ion etching in Ar/O{sub 2} plasma (rf power of 25 W and self-bias of 100 V); and the electrical, structural, and electrochemical characteristics of the exposed surface were investigated. Angle-resolved x-ray photoemission spectroscopy (XPS) measurements revealed a nonuniform layer of amorphous carbon at the exposed surface with an average thickness of approximately 4 nm, as confirmed also by atomic force microscopy profiling of selectively etched areas. On highly boron-doped diamond, the plasma-induced damages resulted also in a nonconductive surface layer. This damaged and insulating surface layer remained resistant to graphite-etching chemicals and to rf oxygen plasma but it was removed completely in microwave hydrogen plasma at 700 deg. C. The surface characteristics after the H-plasma process followed by wet chemical oxidation were restored back to the initial state, as confirmed by XPS. Such ''recovery'' treatment had been applied to an all-diamond submicrometer electrode array initially patterned by an Ar/O{sub 2} plasma etching. The electrochemical characteristics of this electrode array were improved by more than two orders of magnitude, approaching theoretical limit for the given geometrical configuration.

  16. The Release Behavior of Diamond Shocked to 15 Mbar

    NASA Astrophysics Data System (ADS)

    Gregor, M. C.; McCoy, C. A.; Polsin, D. N.; Boehly, T. R.; Meyerhofer, D. D.; Fratanduono, D. E.; Celliers, P. M.

    2014-10-01

    Ultrananocrystalline diamond (UNCD) is used as an ablator material for inertial confinement fusion experiments at the National Ignition Facility. Both the Hugoniot and the release behavior of the UNCD ablators are needed to accurately model the implosion process. The OMEGA laser was used to perform experiments in which two types of high-density carbon released into sample materials with known Hugoniots (quartz, 200 mg/cm3 SiO2 foam, liquid deuterium, and polystyrene). We present preliminary results of the release behavior of both UNCD and single-crystal diamond in the 5- to 15-Mbar regime. Models for the release isentropes of UNCD and single-crystal diamond will be developed using a Mie-Grüneisen equation of state. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

  17. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  18. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2003-01-01

    Statistics on the production, consumption, cost, trade, and government stockpile of natural and synthetic industrial diamond are provided. The outlook for the industrial diamond market is also considered.

  19. Diamond Smoothing Tools

    NASA Technical Reports Server (NTRS)

    Voronov, Oleg

    2007-01-01

    Diamond smoothing tools have been proposed for use in conjunction with diamond cutting tools that are used in many finish-machining operations. Diamond machining (including finishing) is often used, for example, in fabrication of precise metal mirrors. A diamond smoothing tool according to the proposal would have a smooth spherical surface. For a given finish machining operation, the smoothing tool would be mounted next to the cutting tool. The smoothing tool would slide on the machined surface left behind by the cutting tool, plastically deforming the surface material and thereby reducing the roughness of the surface, closing microcracks and otherwise generally reducing or eliminating microscopic surface and subsurface defects, and increasing the microhardness of the surface layer. It has been estimated that if smoothing tools of this type were used in conjunction with cutting tools on sufficiently precise lathes, it would be possible to reduce the roughness of machined surfaces to as little as 3 nm. A tool according to the proposal would consist of a smoothing insert in a metal holder. The smoothing insert would be made from a diamond/metal functionally graded composite rod preform, which, in turn, would be made by sintering together a bulk single-crystal or polycrystalline diamond, a diamond powder, and a metallic alloy at high pressure. To form the spherical smoothing tip, the diamond end of the preform would be subjected to flat grinding, conical grinding, spherical grinding using diamond wheels, and finally spherical polishing and/or buffing using diamond powders. If the diamond were a single crystal, then it would be crystallographically oriented, relative to the machining motion, to minimize its wear and maximize its hardness. Spherically polished diamonds could also be useful for purposes other than smoothing in finish machining: They would likely also be suitable for use as heat-resistant, wear-resistant, unlubricated sliding-fit bearing inserts.

  20. On interlayer stability and high-cycle simulator performance of diamond-like carbon layers for articulating joint replacements.

    PubMed

    Thorwarth, Kerstin; Thorwarth, Götz; Figi, Renato; Weisse, Bernhard; Stiefel, Michael; Hauert, Roland

    2014-06-11

    Diamond like carbon (DLC) coatings have been proven to be an excellent choice for wear reduction in many technical applications. However, for successful adaption to the orthopaedic field, layer performance, stability and adhesion in physiologically relevant setups are crucial and not consistently investigated. In vitro wear testing as well as adequate corrosion tests of interfaces and interlayers are of great importance to verify the long term stability of DLC coated load bearing implants in the human body. DLC coatings were deposited on articulating lumbar spinal disks made of CoCr28Mo6 biomedical implant alloy using a plasma-activated chemical vapor deposition (PACVD) process. As an adhesion promoting interlayer, tantalum films were deposited by magnetron sputtering. Wear tests of coated and uncoated implants were performed in physiological solution up to a maximum of 101 million articulation cycles with an amplitude of ±2° and -3/+6° in successive intervals at a preload of 1200 N. The implants were characterized by gravimetry, inductively coupled plasma optical emission spectrometry (ICP-OES) and cross section scanning electron microscopy (SEM) analysis. It is shown that DLC coated surfaces with uncontaminated tantalum interlayers perform very well and no corrosive or mechanical failure could be observed. This also holds true in tests featuring overload and third-body wear by cortical bone chips present in the bearing pairs. Regarding the interlayer tolerance towards interlayer contamination (oxygen), limits for initiation of potential failure modes were established. It was found that mechanical failure is the most critical aspect and this mode is hypothetically linked to the α-β tantalum phase switch induced by increasing oxygen levels as observed by X-ray diffraction (XRD). It is concluded that DLC coatings are a feasible candidate for near zero wear articulations on implants, potentially even surpassing the performance of ceramic vs. ceramic.

  1. On Interlayer Stability and High-Cycle Simulator Performance of Diamond-Like Carbon Layers for Articulating Joint Replacements

    PubMed Central

    Thorwarth, Kerstin; Thorwarth, Götz; Figi, Renato; Weisse, Bernhard; Stiefel, Michael; Hauert, Roland

    2014-01-01

    Diamond like carbon (DLC) coatings have been proven to be an excellent choice for wear reduction in many technical applications. However, for successful adaption to the orthopaedic field, layer performance, stability and adhesion in physiologically relevant setups are crucial and not consistently investigated. In vitro wear testing as well as adequate corrosion tests of interfaces and interlayers are of great importance to verify the long term stability of DLC coated load bearing implants in the human body. DLC coatings were deposited on articulating lumbar spinal disks made of CoCr28Mo6 biomedical implant alloy using a plasma-activated chemical vapor deposition (PACVD) process. As an adhesion promoting interlayer, tantalum films were deposited by magnetron sputtering. Wear tests of coated and uncoated implants were performed in physiological solution up to a maximum of 101 million articulation cycles with an amplitude of ±2° and −3/+6° in successive intervals at a preload of 1200 N. The implants were characterized by gravimetry, inductively coupled plasma optical emission spectrometry (ICP-OES) and cross section scanning electron microscopy (SEM) analysis. It is shown that DLC coated surfaces with uncontaminated tantalum interlayers perform very well and no corrosive or mechanical failure could be observed. This also holds true in tests featuring overload and third-body wear by cortical bone chips present in the bearing pairs. Regarding the interlayer tolerance towards interlayer contamination (oxygen), limits for initiation of potential failure modes were established. It was found that mechanical failure is the most critical aspect and this mode is hypothetically linked to the α-β tantalum phase switch induced by increasing oxygen levels as observed by X-ray diffraction (XRD). It is concluded that DLC coatings are a feasible candidate for near zero wear articulations on implants, potentially even surpassing the performance of ceramic vs. ceramic. PMID

  2. Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications

    DOEpatents

    Gruen, Dieter M.

    2010-05-18

    One provides (101) disperse ultra-nanocrystalline diamond powder material that comprises a plurality of substantially ordered crystallites that are each sized no larger than about 10 nanometers. One then reacts (102) these crystallites with a metallic component. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also substantially preserving the thermal conductivity behavior of the disperse ultra-nanocrystalline diamond powder material. The reaction process can comprise combining (201) the crystallites with one or more metal salts in an aqueous solution and then heating (203) that aqueous solution to remove the water. This heating can occur in a reducing atmosphere (comprising, for example, hydrogen and/or methane) to also reduce the salt to metal.

  3. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

    NASA Astrophysics Data System (ADS)

    Willems van Beveren, L. H.; Liu, R.; Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S.

    2016-06-01

    Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

  4. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    SciTech Connect

    Altukhov, A. A.; Vikharev, A. L.; Gorbachev, A. M.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B. Radishev, D. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2011-03-15

    The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

  5. Characterisation of diamond coatings with different morphologies by Raman spectroscopy using various laser wavelengths.

    PubMed

    Rudigier, Moritz; Haubner, Roland

    2012-05-01

    Since the beginning of low-pressure diamond synthesis, Raman spectroscopy has been widely used to identify and characterise the quality of diamonds. The diamond crystal is characterised by a Raman peak at about 1,332 cm(-1). Other peaks are associated with miscellaneous carbon structures, e.g. graphite and amorphous phases. In recent years, both well-faceted crystalline diamonds and nanocrystalline and ultrananocrystalline diamonds have been investigated. For these fine-grained materials, the diamond peak at 1,332 cm(-1) disappears and the intensities of peaks at other wavelengths increase. To study the influence of the Raman laser wavelength, three lasers were used (472.681 nm, blue; 532.1 nm, green; 632.81 nm, red). For well-faceted diamonds, the Raman spectra with blue and green laser light were similar. A shift of the peak maxima and different intensities were observed. With use of the red laser, a strong luminescence peak and low peak intensities for the various carbon-related peaks occurred. When the diamond morphology changes from well-faceted to fine-grained ballas diamond, the spectra are similar for all three lasers.

  6. Nanofabrication of sharp diamond tips by e-beam lithography and inductively coupled plasma reactive ion etching.

    SciTech Connect

    Moldovan, N.; Divan, R.; Zeng, H.; Carlisle, J. A.; Advanced Diamond Tech.

    2009-12-07

    Ultrasharp diamond tips make excellent atomic force microscopy probes, field emitters, and abrasive articles due to diamond's outstanding physical properties, i.e., hardness, low friction coefficient, low work function, and toughness. Sharp diamond tips are currently fabricated as individual tips or arrays by three principal methods: (1) focused ion beam milling and gluing onto a cantilever of individual diamond tips, (2) coating silicon tips with diamond films, or (3) molding diamond into grooves etched in a sacrificial substrate, bonding the sacrificial substrate to another substrate or electrodepositing of a handling chip, followed by dissolution of the sacrificial substrate. The first method is tedious and serial in nature but does produce very sharp tips, the second method results in tips whose radius is limited by the thickness of the diamond coating, while the third method involves a costly bonding and release process and difficulties in thoroughly filling the high aspect ratio apex of molding grooves with diamond at the nanoscale. To overcome the difficulties with these existing methods, this article reports on the feasibility of the fabrication of sharp diamond tips by direct etching of ultrananocrystalline diamond (UNCD{reg_sign}) as a starting and structural material. The UNCD is reactive ion etched using a cap-precursor-mask scheme. An optimized etching recipe demonstrates the formation of ultrasharp diamond tips ({approx} 10 nm tip radius) with etch rates of 650 nm/min.

  7. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

    NASA Astrophysics Data System (ADS)

    Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-01

    The Al2O3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H2O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D2O instead of H2O in the ALD and found that the Al2O3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH3 groups than the high-temperature film. This CH3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H2O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H2O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D2O-oxidant ALD but found that the mass density and dielectric constant of D2O-grown Al2O3 films are smaller than those of H2O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al2O3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD technologies in general.

  8. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2012-01-01

    Estimated 2011 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2011, natural industrial diamonds were produced in more than 20 countries, and synthetic industrial diamond was produced in at least 13 countries. About 98 percent of the combined natural and synthetic global output was produced in China, Ireland, Japan, Russia, South Africa and the United States. China is the world's leading producer of synthetic industrial diamond followed by Russia and the United States.

  9. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2006-01-01

    In 2005, estimated world production of natural and synthetic industrial diamond was 630 million carats. Natural industrial diamond deposits were found in more than 35 countries. Synthetic industrial diamond is produced in at least 15 countries. More than 81% of the combined natural and synthetic global output was produced in Ireland, Japan, Russia, South Africa and the United States.

  10. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2011-01-01

    Estimated world production of natural and synthetic industrial diamond was about 4.44 billion carats in 2010. Natural industrial diamond deposits have been found in more than 35 countries, and synthetic industrial diamond is produced in at least 15 countries.

  11. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2013-01-01

    Estimated 2012 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2012, natural industrial diamonds were produced in at least 20 countries, and synthetic industrial diamond was produced in at least 12 countries. About 99 percent of the combined natural and synthetic global output was produced in Belarus, China, Ireland, Japan, Russia, South Africa and the United States. During 2012, China was the world’s leading producer of synthetic industrial diamond followed by the United States and Russia. In 2012, the two U.S. synthetic producers, one in Pennsylvania and the other in Ohio, had an estimated output of 103 million carats, valued at about $70.6 million. This was an estimated 43.7 million carats of synthetic diamond bort, grit, and dust and powder with a value of $14.5 million combined with an estimated 59.7 million carats of synthetic diamond stone with a value of $56.1 million. Also in 2012, nine U.S. firms manufactured polycrystalline diamond (PCD) from synthetic diamond grit and powder. The United States government does not collect or maintain data for either domestic PCD producers or domestic chemical vapor deposition (CVD) diamond producers for quantity or value of annual production. Current trade and consumption quantity data are not available for PCD or for CVD diamond. For these reasons, PCD and CVD diamond are not included in the industrial diamond quantitative data reported here.

  12. Spacetime diamonds

    NASA Astrophysics Data System (ADS)

    Su, Daiqin; Ralph, T. C.

    2016-02-01

    We show that the particle-number distribution of diamond modes, modes that are localized in a finite spacetime region, are thermal for the Minkowski vacuum state of a massless scalar field, an analogue to the Unruh effect. The temperature of the diamond is inversely proportional to its size. An inertial observer can detect this thermal radiation by coupling to the diamond modes using an appropriate energy-scaled detector. We further investigate the correlations between various diamonds and find that entanglement between adjacent diamonds dominates.

  13. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2000-01-01

    Part of the 1999 Industrial Minerals Review. A review of the state of the global industrial diamond industry in 1999 is presented. World consumption of industrial diamond has increased annually in recent years, with an estimated 500 million carats valued between $650 million and $800 million consumed in 1999. In 1999, the U.S. was the world's largest market for industrial diamond and was also one of the world's main producers; the others were Ireland, Russia, and South Africa. Uses of industrial diamonds are discussed, and prices of natural and synthetic industrial diamond are reported.

  14. Diamond detector - material science, design and application

    NASA Astrophysics Data System (ADS)

    Gaowei, Mengjia

    diamond valence-band maximum was determined by theoretically calculating the diamond density of states and applying cross section corrections. The diamond-platinum Schottky barrier height was lowered by 0.2 eV after thermal annealing, indicating annealing may increase carrier injection in diamond devices leading to photoconductive gain. In order to adapt our device to soft x-ray applications, efforts are made to develop a thin diamond position monitor for lowering device absorption. In section 5 we have discussed the fabrication and testing of thin diamond x-ray monitors made from diamond plates with nominal thickness of 30microm, which is 1/10th of the thickness of the diamonds we previously used. Calibration results of this detector are presented and discussed in comparison with thicker diamond sensors. Section 6 introduces our effort on the investigation of carrier loss mechanism in diamond detectors. Near edge responsivity in diamond x-ray detectors has been used to confirm the carrier loss mechanism as recombination due to diffusion into the incident electrode. We present a detailed study of the bias dependence of the diamond responsivity across the carbon k-edge. The carrier loss is modeled by incorporating a characteristic recombination length into the absorption model and is shown to agree well with Monte Carlo simulated carrier losses. In addition, nitrogen doped ultrananocrystalline diamond (nUNCD) grown on the surface of a CVD single crystal diamond as an alternative contact to metal is tested in the similar measurements as the metal contact diamond. nUNCD has a much lower x-ray absorption than metal contacts and is designed to improve the performance of our device. This diamond is calibrated over a wide photon energy range from 0.2 keV to 28 keV, and compared with platinum coated diamond. Results of these studies will be presented and discussed in section 7. Future work has been proposed in the last section in improving the design and fabrication of diamond

  15. Electrical stimulation of retinal ganglion cells with diamond and the development of an all diamond retinal prosthesis.

    PubMed

    Hadjinicolaou, Alex E; Leung, Ronald T; Garrett, David J; Ganesan, Kumaravelu; Fox, Kate; Nayagam, David A X; Shivdasani, Mohit N; Meffin, Hamish; Ibbotson, Michael R; Prawer, Steven; O'Brien, Brendan J

    2012-08-01

    Electronic retinal implants for the blind are already a market reality. A world wide effort is underway to find the technology that offers the best combination of performance and safety for potential patients. Our approach is to construct an epi-retinally targeted device entirely encapsulated in diamond to maximise longevity and biocompatibility. The stimulating array of our device comprises a monolith of electrically insulating diamond with thousands of hermetic, microscale nitrogen doped ultra-nanocrystalline diamond (N-UNCD) feedthroughs. Here we seek to establish whether the conducting diamond feedthroughs of the array can be used as stimulating electrodes without further modification with a more traditional neural stimulation material. Efficacious stimulation of retinal ganglion cells was established using single N-UNCD microelectrodes in contact with perfused, explanted, rat retina. Evoked rat retinal ganglion cell action potentials were recorded by patch clamp recording from single ganglion cells, adjacent to the N-UNCD stimulating electrode. Separately, excellent electrochemical stability of N-UNCD was established by prolonged pulsing in phosphate buffered saline at increasing charge density up to the measured charge injection limit for the material.

  16. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  17. Thermal diffusivity of diamond films

    NASA Technical Reports Server (NTRS)

    Albin, Sacharia; Winfree, William P.; Crews, B. Scott

    1990-01-01

    A laser pulse technique to measure the thermal diffusivity of diamond films deposited on a silicon substrate is developed. The effective thermal diffusivity of diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by the laser pulses. An analytical model is developed to calculate the effective in-plane (face-parallel) diffusivity of a two layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. Phase and amplitude measurements give similar results. The thermal conductivity of the films is found to be better than that of type 1a natural diamond.

  18. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2007-01-01

    World production of natural and synthetic industrial diamond was about 648 million carats in 2006, with 79 percent of the production coming from Ireland, Japan, Russia, South Africa, and the U.S. U.S. consumption was was an estimated 602 million carats, imports were over 391 million carats, and exports were about 83 million carats. About 87 percent of the industrial diamonds market uses synthetic diamonds, which are expected to become less expensive as technology improves and competition from low-cost producers increases.

  19. Extreme ultraviolet transmission of a synthetic diamond thin film

    NASA Technical Reports Server (NTRS)

    Vallerga, John V.; Gibson, J. L.; Knowles, J. L.

    1991-01-01

    Measurements are presented of a thin film of synthetic diamond at various wavelengths in the extreme ultraviolet. The synthetic diamond combines the transmission properties of carbon with the strength, density, and ruggedness of a natural diamond. The Extreme Ultraviolet Transmission (EUV) of a film of the synthetic diamond has shown the existence of a thin surface layer of silicon, probably in the form of silicon carbide, which is not a contaminant layer.

  20. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2004-01-01

    Part of the 2003 industrial minerals review. Supply and demand data for industrial diamond are provided. Topics discussed are consumption, prices, imports and exports, government stockpiles, and the outlook for 2004.

  1. Diamond nanophotonics

    PubMed Central

    Beha, Katja; Wolfer, Marco; Becker, Merle C; Siyushev, Petr; Jamali, Mohammad; Batalov, Anton; Hinz, Christopher; Hees, Jakob; Kirste, Lutz; Obloh, Harald; Gheeraert, Etienne; Naydenov, Boris; Jakobi, Ingmar; Dolde, Florian; Pezzagna, Sébastien; Twittchen, Daniel; Markham, Matthew; Dregely, Daniel; Giessen, Harald; Meijer, Jan; Jelezko, Fedor; Nebel, Christoph E; Bratschitsch, Rudolf; Leitenstorfer, Alfred; Wrachtrup, Jörg

    2012-01-01

    Summary We demonstrate the coupling of single color centers in diamond to plasmonic and dielectric photonic structures to realize novel nanophotonic devices. Nanometer spatial control in the creation of single color centers in diamond is achieved by implantation of nitrogen atoms through high-aspect-ratio channels in a mica mask. Enhanced broadband single-photon emission is demonstrated by coupling nitrogen–vacancy centers to plasmonic resonators, such as metallic nanoantennas. Improved photon-collection efficiency and directed emission is demonstrated by solid immersion lenses and micropillar cavities. Thereafter, the coupling of diamond nanocrystals to the guided modes of micropillar resonators is discussed along with experimental results. Finally, we present a gas-phase-doping approach to incorporate color centers based on nickel and tungsten, in situ into diamond using microwave-plasma-enhanced chemical vapor deposition. The fabrication of silicon–vacancy centers in nanodiamonds by microwave-plasma-enhanced chemical vapor deposition is discussed in addition. PMID:23365803

  2. High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al{sub 2}O{sub 3}

    SciTech Connect

    Daicho, Akira Saito, Tatsuya; Kurihara, Shinichiro; Kawarada, Hiroshi; Hiraiwa, Atsushi

    2014-06-14

    Although the two-dimensional hole gas (2DHG) of a hydrogen-terminated diamond surface provides a unique p-type conducting layer for high-performance transistors, the conductivity is highly sensitive to its environment. Therefore, the surface must be passivated to preserve the 2DHG, especially at high temperature. We passivated the surface at high temperature (450 °C) without the loss of C-H surface bonds by atomic layer deposition (ALD) and investigated the thermal reliability of the Al{sub 2}O{sub 3} film. As a result, C-H bonds were preserved, and the hole accumulation effect appeared after the Al{sub 2}O{sub 3} deposition by ALD with H{sub 2}O as an oxidant. The sheet resistivity and hole density were almost constant between room temperature and 500 °C by the passivation with thick Al{sub 2}O{sub 3} film thicker than 38 nm deposited by ALD at 450 °C. After the annealing at 550 °C in air The sheet resistivity and hole density were preserved. These results indicate the possibility of high-temperature application of the C-H surface diamond device in air. In the case of lower deposition temperatures, the sheet resistivity increased after air annealing, suggesting an insufficient protection capability of these films. Given the result of sheet resistivity after annealing, the increase in the sheet resistivity of these samples was not greatly significant. However, bubble like patterns were observed in the Al{sub 2}O{sub 3} films formed from 200 to 400 °C by air annealing at 550 °C for 1 h. On the other hand, the patterns were no longer observed at 450 °C deposition. Thus, this 450 °C deposition is the sole solution to enabling power device application, which requires high reliability at high temperatures.

  3. Diamond fiber field emitters

    DOEpatents

    Blanchet-Fincher, Graciela B.; Coates, Don M.; Devlin, David J.; Eaton, David F.; Silzars, Aris K.; Valone, Steven M.

    1996-01-01

    A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

  4. Nanocrystalline diamond for medicine

    NASA Astrophysics Data System (ADS)

    Mitura, Stanislaw

    1997-06-01

    The unique properties of thin amorphous diamond layers make them perspective candidates for producing advanced micro- electronic devices, coatings for cutting tools and optics. Moreover, due to the highest bicompatibility of carbon resulting from the presence of this element in human body, it appears to be a potential biomaterial. Until present the amorphous diamond has found industrial applications in some areas. One of the applications of the carbon layers are coatings for medical implants. The studies of carbon films as coatings for implants in surgery were aimed on the investigations of biological resistance of implants, histopathological investigations on laboratory animals, tests of corrosion resistance, measurements of mechanical properties and a breakdown test in Tyrod solution. The current state of published work in the subject is reviewed in the paper together with a discussion concerning classification of this material.

  5. Advanced Diamond Anvil Techniques (Customized Diamond Anvils)

    SciTech Connect

    Weir, S

    2009-02-11

    A complete set of diamond-based fabrication tools now exists for making a wide range of different types of diamond anvils which are tailored for various high-P applications. Current tools include: CVD diamond deposition (making diamond); Diamond polishing, laser drilling, plasma etching (removal of diamond); and Lithography, 3D laser pantography (patterning features onto diamond); - Metal deposition (putting electrical circuits and metal masks onto diamond). Current applications include the following: Electrical Conductivity; Magnetic Susceptibility; and High-P/High-T. Future applications may include: NMR; Hall Effect; de Haas - Shubnikov (Fermi surface topology); Calorimetry; and thermal conductivity.

  6. A novel radial anode layer ion source for inner wall pipe coating and materials modification—Hydrogenated diamond-like carbon coatings from butane gas

    NASA Astrophysics Data System (ADS)

    Murmu, Peter P.; Markwitz, Andreas; Suschke, Konrad; Futter, John

    2014-08-01

    We report a new ion source development for inner wall pipe coating and materials modification. The ion source deposits coatings simultaneously in a 360° radial geometry and can be used to coat inner walls of pipelines by simply moving the ion source in the pipe. Rotating parts are not required, making the source ideal for rough environments and minimizing maintenance and replacements of parts. First results are reported for diamond-like carbon (DLC) coatings on Si and stainless steel substrates deposited using a novel 360° ion source design. The ion source operates with permanent magnets and uses a single power supply for the anode voltage and ion acceleration up to 10 kV. Butane (C4H10) gas is used to coat the inner wall of pipes with smooth and homogeneous DLC coatings with thicknesses up to 5 μm in a short time using a deposition rate of 70 ± 10 nm min-1. Rutherford backscattering spectrometry results showed that DLC coatings contain hydrogen up to 30 ± 3% indicating deposition of hydrogenated DLC (a-C:H) coatings. Coatings with good adhesion are achieved when using a multiple energy implantation regime. Raman spectroscopy results suggest slightly larger disordered DLC layers when using low ion energy, indicating higher sp3 bonds in DLC coatings. The results show that commercially interesting coatings can be achieved in short time.

  7. A novel radial anode layer ion source for inner wall pipe coating and materials modification--hydrogenated diamond-like carbon coatings from butane gas.

    PubMed

    Murmu, Peter P; Markwitz, Andreas; Suschke, Konrad; Futter, John

    2014-08-01

    We report a new ion source development for inner wall pipe coating and materials modification. The ion source deposits coatings simultaneously in a 360° radial geometry and can be used to coat inner walls of pipelines by simply moving the ion source in the pipe. Rotating parts are not required, making the source ideal for rough environments and minimizing maintenance and replacements of parts. First results are reported for diamond-like carbon (DLC) coatings on Si and stainless steel substrates deposited using a novel 360° ion source design. The ion source operates with permanent magnets and uses a single power supply for the anode voltage and ion acceleration up to 10 kV. Butane (C4H10) gas is used to coat the inner wall of pipes with smooth and homogeneous DLC coatings with thicknesses up to 5 μm in a short time using a deposition rate of 70 ± 10 nm min(-1). Rutherford backscattering spectrometry results showed that DLC coatings contain hydrogen up to 30 ± 3% indicating deposition of hydrogenated DLC (a-C:H) coatings. Coatings with good adhesion are achieved when using a multiple energy implantation regime. Raman spectroscopy results suggest slightly larger disordered DLC layers when using low ion energy, indicating higher sp(3) bonds in DLC coatings. The results show that commercially interesting coatings can be achieved in short time. PMID:25173323

  8. Diamond-modified AFM probes: from diamond nanowires to atomic force microscopy-integrated boron-doped diamond electrodes.

    PubMed

    Smirnov, Waldemar; Kriele, Armin; Hoffmann, René; Sillero, Eugenio; Hees, Jakob; Williams, Oliver A; Yang, Nianjun; Kranz, Christine; Nebel, Christoph E

    2011-06-15

    In atomic force microscopy (AFM), sharp and wear-resistant tips are a critical issue. Regarding scanning electrochemical microscopy (SECM), electrodes are required to be mechanically and chemically stable. Diamond is the perfect candidate for both AFM probes as well as for electrode materials if doped, due to diamond's unrivaled mechanical, chemical, and electrochemical properties. In this study, standard AFM tips were overgrown with typically 300 nm thick nanocrystalline diamond (NCD) layers and modified to obtain ultra sharp diamond nanowire-based AFM probes and probes that were used for combined AFM-SECM measurements based on integrated boron-doped conductive diamond electrodes. Analysis of the resonance properties of the diamond overgrown AFM cantilevers showed increasing resonance frequencies with increasing diamond coating thicknesses (i.e., from 160 to 260 kHz). The measured data were compared to performed simulations and show excellent correlation. A strong enhancement of the quality factor upon overgrowth was also observed (120 to 710). AFM tips with integrated diamond nanowires are shown to have apex radii as small as 5 nm and where fabricated by selectively etching diamond in a plasma etching process using self-organized metal nanomasks. These scanning tips showed superior imaging performance as compared to standard Si-tips or commercially available diamond-coated tips. The high imaging resolution and low tip wear are demonstrated using tapping and contact mode AFM measurements by imaging ultra hard substrates and DNA. Furthermore, AFM probes were coated with conductive boron-doped and insulating diamond layers to achieve bifunctional AFM-SECM probes. For this, focused ion beam (FIB) technology was used to expose the boron-doped diamond as a recessed electrode near the apex of the scanning tip. Such a modified probe was used to perform proof-of-concept AFM-SECM measurements. The results show that high-quality diamond probes can be fabricated, which are

  9. 'Diamond' in 3-D

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This 3-D, microscopic imager mosaic of a target area on a rock called 'Diamond Jenness' was taken after NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool for a second time.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  10. High-density fluids and the growth of monocrystalline diamonds

    NASA Astrophysics Data System (ADS)

    Weiss, Y.; Kiflawi, I.; Davies, N.; Navon, O.

    2014-09-01

    The chemical nature and composition of the growth medium of monocrystalline (MC) diamonds is still a matter of debate, partially because carbonate-bearing high-density fluids (HDFs) that are common in fibrous diamonds have not been found in MC diamonds. Here we report the first finding of HDF microinclusions in a MC octahedral diamond from Finsch, South Africa and in the MC octahedral core of a coated diamond from Kankan, Guinea; both diamonds carry nitrogen in B-centers. Numerous microinclusions in diamond Finsch_2a_cap1 are restricted to two thin layers parallel to the (1 1 1) face, ∼20 and 200 μm from the diamond rim. Low-Mg carbonatitic HDFs are found along the inner layer while the outer layer trapped saline compositions. The major and trace element compositions of the inclusions and their infrared spectra are highly similar to those of microinclusions found in fibrous diamonds. A few isolated microinclusions of saline compositions are scattered around a sulfide inclusion in the center of the octahedral core of diamond ON-KAN-383. This evidence for the involvement of oxidized fluids in the formation of MC diamonds adds to previous reports on the antiquity of HDFs in fibrous diamonds, the presence of carbonate and halide phases in inclusions in MC diamonds and the similarity of trace element pattern of a MC diamond to those of low-Mg carbonatitic HDF in fibrous diamonds. In addition, we show that the interaction of HDFs with depleted garnets can produce sinusoidal REE patterns which are one of the primary features of lherzolitic and harzburgitic garnet inclusions in MC diamonds. Together, these observations suggest that HDFs are involved in the formation of many types of diamonds from the Archaean to the Phanerozoic. HDFs are trapped in large quantities during rapid, fibrous growth, but must also be present during the growth of many MC diamonds.

  11. New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

    NASA Astrophysics Data System (ADS)

    Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

    2006-04-01

    We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

  12. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  13. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    SciTech Connect

    Araújo, D.; Alegre, M. P.; Piñero, J. C.; Fiori, A.; Bustarret, E.; Jomard, F.

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  14. Superconducting nanowire single photon detector on diamond

    SciTech Connect

    Atikian, Haig A.; Burek, Michael J.; Choy, Jennifer T.; Lončar, Marko; Eftekharian, Amin; Jafari Salim, A.; Hamed Majedi, A.

    2014-03-24

    Superconducting nanowire single photon detectors are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310 nm and 632 nm photons. A multi-step diamond surface polishing procedure is reported, involving iterative reactive ion etching and mechanical polishing to create a suitable diamond surface for the deposition and patterning of thin film superconducting layers. Using this approach, diamond substrates with less than 300 pm Root Mean Square surface roughness are obtained.

  15. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

    NASA Astrophysics Data System (ADS)

    Banal, Ryan G.; Imura, Masataka; Liu, Jiangwei; Koide, Yasuo

    2016-09-01

    Significant improvements in electrical properties are achieved from AlN/Al2O3 stack gate H-terminated diamond metal-insulator-semiconductor field-effect transistors (MISFETs) upon improving the structural quality of an AlN insulating layer. The 5-nm-thick Al2O3 layer and 175-nm-thick AlN film are successively deposited by atomic layer deposition and sputter deposition techniques, respectively, on a (100) H-diamond epitaxial layer substrate. The AlN layer exhibits a poly-crystalline structure with the hexagonal wurtzite phase. The crystallite growth proceeds along the c-axis direction and perpendicular to the substrate surface, resulting in a columnar grain structure with an average grain size of around ˜40 nm. The MIS diode fabricated provides a leak current density as low as ˜10-5 A/cm2 at gate voltage bias in the range of -8 V and +4 V. The MISFET fabricated shows normally off enhancement mode transfer characteristic. The drain-source current maximum, threshold voltage, and maximum extrinsic conductance of the FET with 4 μm gate length are -8.89 mA/mm, -0.22 V, and 6.83 mS/mm, respectively.

  16. Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Li, F. N.; Liu, J. W.; Zhang, J. W.; Wang, X. L.; Wang, W.; Liu, Z. C.; Wang, H. X.

    2016-05-01

    Barrier height (VBH) values for Pd/hydrogen-terminated diamond (H-diamond) and Pd/oxygen-terminated diamond (O-diamond) have been investigated by X-ray photoelectron spectroscopy technique. H-diamond and O-diamond have been formed on the same diamond (100) layer grown by microwave plasma-enhanced chemical vapor deposition on which Pd layers have been evaporated. The VBH values for Pd/H-diamond and Pd/O-diamond are determined to be -0.27 eV and 1.73 eV, respectively. It indicates that Pd is a suitable metal for ohmic and Schottky contacts on H-diamond and O-diamond, respectively. The experimental ΦBH values are in good agreement with the theoretical calculation results.

  17. Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

    NASA Astrophysics Data System (ADS)

    Liu, Zhangcheng; Ao, Jin-Ping; Li, Fengnan; Wang, Wei; Wang, Jingjing; Zhang, Jingwen; Wang, Hong-Xing

    2016-10-01

    Three dimensional diamond ultraviolet (UV) photodetector have been fabricated on diamond epitaxial layer through down-top approach, where diamond epitaxial layer was grown between metal electrodes. A thin diamond epitaxial layer was first grown on high-pressure high-temperature single crystal diamond substrate. Then, the diamond epitaxial layer was covered by interdigitated tungsten electrodes. Furthermore, another diamond epitaxial layer was grown on uncovered area. At last, UV-Ozone treatment was used to oxidize the surface. The optoelectronic performance of the photodetector was characterized, exhibiting a large responsivity and a repeatable transient response behavior. Moreover, down-top process is beneficial for the electrode conductivity stability. Also, an ohmic contact could be formed between tungsten and diamond during growth. The results indicate that down-top process is an efficient way for fabrication of three dimensional diamond photodetectors.

  18. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  19. Diamond nucleation under bias conditions

    SciTech Connect

    Stoeckel, R.; Stammler, M.; Janischowsky, K.; Ley, L.; Albrecht, M.; Strunk, H.P.

    1998-01-01

    The so-called bias pretreatment allows the growth of heteroepitaxial diamond films by plasma chemical vapor deposition on silicon (100) surfaces. We present plan-view and cross-sectional transmission electron micrographs of the substrate surface at different phases of the bias pretreatment. These observations are augmented by measurements of the etch rates of Si, SiC, and different carbon modifications under plasma conditions and the size distribution of oriented diamond crystals grown after bias pretreatment. Based on these results a new model for diamond nucleation under bias conditions is proposed. First, a closed layer of nearly epitaxially oriented cubic SiC with a thickness of about 10 nm is formed. Subplantation of carbon into this SiC layer causes a supersaturation with carbon and results in the subcutaneous formation of epitaxially oriented nucleation centers in the SiC layer. Etching of the SiC during the bias pretreatment as well as during diamond growth brings these nucleation centers to the sample surface and causes the growth of diamonds epitaxially oriented on the Si/SiC substrate. {copyright} {ital 1998 American Institute of Physics.}

  20. FAST TRACK COMMUNICATION: On the reaction behaviour of hydrocarbon species at diamond (1 0 0) and (1 1 1) surfaces: a molecular dynamics investigation

    NASA Astrophysics Data System (ADS)

    Eckert, M.; Neyts, E.; Bogaerts, A.

    2008-02-01

    Molecular dynamics simulations have been performed to investigate the reaction behaviour of species that may affect the growth of ultrananocrystalline and nanocrystalline diamond films. We calculated the sticking coefficients of CHx (x = 0-4), C2Hx (x = 0-6), C3Hx (x = 0-2) and C4Hx (x = 0-2) on diamond (1 0 0)2 × 1 and (1 1 1)1 × 1 surfaces at two different substrate temperatures. It is found that the numbers of free electrons and hydrogen atoms of the species determine their sticking efficiency. The different bonding structures of the two surfaces cause different temperature effects on the sticking efficiency. These results predict a temperature-dependent ratio of diamond (1 0 0) to (1 1 1) growth.

  1. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

    DOEpatents

    Carlisle, John A.; Auciello, Orlando; Birrell, James

    2006-10-31

    An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

  2. Online, efficient and precision laser profiling of bronze-bonded diamond grinding wheels based on a single-layer deep-cutting intermittent feeding method

    NASA Astrophysics Data System (ADS)

    Deng, Hui; Chen, Genyu; He, Jie; Zhou, Cong; Du, Han; Wang, Yanyi

    2016-06-01

    In this study, an online, efficient and precision laser profiling approach that is based on a single-layer deep-cutting intermittent feeding method is described. The effects of the laser cutting depth and the track-overlap ratio of the laser cutting on the efficiency, precision and quality of laser profiling were investigated. Experiments on the online profiling of bronze-bonded diamond grinding wheels were performed using a pulsed fiber laser. The results demonstrate that an increase in the laser cutting depth caused an increase in the material removal efficiency during the laser profiling process. However, the maximum laser profiling efficiency was only achieved when the laser cutting depth was equivalent to the initial surface contour error of the grinding wheel. In addition, the selection of relatively high track-overlap ratios of laser cutting for the profiling of grinding wheels was beneficial with respect to the increase in the precision of laser profiling, whereas the efficiency and quality of the laser profiling were not affected by the change in the track-overlap ratio. After optimized process parameters were employed for online laser profiling, the circular run-out error and the parallelism error of the grinding wheel surface decreased from 83.1 μm and 324.6 μm to 11.3 μm and 3.5 μm, respectively. The surface contour precision of the grinding wheel significantly improved. The highest surface contour precision for grinding wheels of the same type that can be theoretically achieved after laser profiling is completely dependent on the peak power density of the laser. The higher the laser peak power density is, the higher the surface contour precision of the grinding wheel after profiling.

  3. Microstructural Evolution of Nanocrystalline Diamond Films Due to CH4/Ar/H2 Plasma Post-Treatment Process.

    PubMed

    Lin, Sheng-Chang; Yeh, Chien-Jui; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I-Nan

    2015-10-01

    Plasma post-treatment process was observed to markedly enhance the electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films. TEM examinations reveal that the prime factor which improves the EFE properties of these films is the coalescence of ultrasmall diamond grains (∼5 nm) forming large diamond grains about hundreds of nanometers accompanied by the formation of nanographitic clusters along the grain boundaries due to the plasma post-treatment process. OES studies reveal the presence of large proportion of atomic hydrogen and C2 (or CH) species, which are the main ingredients that altered the granular structure of the UNCD films. In the post-treatment process, the plasma interacts with the diamond films by a diffusion process. The recrystallization of diamond grains started at the surface region of the material, and the interaction zone increased with the post-treatment period. The entire diamond film can be converted into a nanocrystalline granular structure when post-treated for a sufficient length of time.

  4. Design and production of diamond devices

    SciTech Connect

    Haenni, W.; Dan, J.P.; Perret, A.

    1995-12-31

    The outstanding properties of thin diamond films (hardness, chemical inertness, high thermal conductivity, high transparency, etc.) make them a good candidate for sensors, electronic or micromechanical devices, either self-standing or as part of microsystems. The structuring of diamond films and production of devices based on their properties has been described several times in the literature. Intrinsic as well as p-type doped diamond layers are now routinely deposited by different suppliers. To make full use of these layers in microtechnical products, it is necessary to further master suitable structuring techniques. Two methods have been developed and tested namely, selective area deposition (SAD) and direct etching of blanket-deposited diamond films. Both of these complementary approaches are described here, aiming at the production of thin diamond film structures suitable for example, to manufacture chemical sensors, cantilever beams or electrodes.

  5. Diamond knife.

    PubMed

    Rowsey, J J; Balyeat, H D; Yeisley, K P

    1982-04-01

    We present a new diamond knife which allows for reasonably precise incisions in cornea or sclera. The knife may be ultrasonically cleaned and is sharper than any metal knife whose edge we have examined to date by scanning electron microscopy. The edge is approximately 0.1 micron in width, compared to 1-5 micron width edges of most metal knives. We feel that this prototype will allow investigators to recommend special modifications to the manufacturer of their own choice. PMID:6285246

  6. Diamond Tours

    NASA Technical Reports Server (NTRS)

    2007-01-01

    On April 24, a group traveling with Diamond Tours visited StenniSphere, the visitor center at NASA John C. Stennis Space Center in South Mississippi. The trip marked Diamond Tours' return to StenniSphere since Hurricane Katrina struck the Gulf Coast on Aug. 29, 2005. About 25 business professionals from Georgia enjoyed the day's tour of America's largest rocket engine test complex, along with the many displays and exhibits at the museum. Before Hurricane Katrina, the nationwide company brought more than 1,000 visitors to StenniSphere each month. That contributed to more than 100,000 visitors from around the world touring the space center each year. In past years StenniSphere's visitor relations specialists booked Diamond Tours two or three times a week, averaging 40 to 50 people per visit. SSC was established in the 1960s to test the huge engines for the Saturn V moon rockets. Now 40 years later, the center tests every main engine for the space shuttle. SSC will soon begin testing the rocket engines that will power spacecraft carrying Americans back to the moon and on to Mars. For more information or to book a tour, visit http://www.nasa.gov/centers/stennis/home/index.html and click on the StenniSphere logo; or call 800-237-1821 or 228-688-2370.

  7. Organophosphonate biofunctionalization of diamond electrodes.

    PubMed

    Caterino, R; Csiki, R; Wiesinger, M; Sachsenhauser, M; Stutzmann, M; Garrido, J A; Cattani-Scholz, A; Speranza, Giorgio; Janssens, S D; Haenen, K

    2014-08-27

    The modification of the diamond surface with organic molecules is a crucial aspect to be considered for any bioapplication of this material. There is great interest in broadening the range of linker molecules that can be covalently bound to the diamond surface. In the case of protein immobilization, the hydropathicity of the surface has a major influence on the protein conformation and, thus, on the functionality of proteins immobilized at surfaces. For electrochemical applications, particular attention has to be devoted to avoid that the charge transfer between the electrode and the redox center embedded in the protein is hindered by a thick insulating linker layer. This paper reports on the grafting of 6-phosphonohexanoic acid on OH-terminated diamond surfaces, serving as linkers to tether electroactive proteins onto diamond surfaces. X-ray photoelectron spectroscopy (XPS) confirms the formation of a stable layer on the surface. The charge transfer between electroactive molecules and the substrate is studied by electrochemical characterization of the redox activity of aminomethylferrocene and cytochrome c covalently bound to the substrate through this linker. Our work demonstrates that OH-terminated diamond functionalized with 6-phosphonohexanoic acid is a suitable platform to interface redox-proteins, which are fundamental building blocks for many bioelectronics applications.

  8. Study of diamond film growth and properties

    NASA Technical Reports Server (NTRS)

    Albin, Sacharial

    1990-01-01

    The objective was to study diamond film growth and its properties in order to enhance the laser damage threshold of substrate materials. Calculations were performed to evaluate laser induced thermal stress parameter, R(sub T) of diamond. It is found that diamond has several orders of magnitude higher in value for R(sub T) compared to other materials. Thus, the laser induced damage threshold (LIDT) of diamond is much higher. Diamond films were grown using a microwave plasma enhanced chemical vapor deposition (MPECVD) system at various conditions of gas composition, pressure, temperature, and substrate materials. A 0.5 percent CH4 in H2 at 20 torr were ideal conditions for growing of high quality diamond films on substrates maintained at 900 C. The diamond films were polycrystalline which were characterized by scanning electron microscopy (SEM) and Raman scattering spectroscopy. The top surface of the growing film is always rough due to the facets of polycrystalline film while the back surface of the film replicates the substrate surface. An analytical model based on two dimensional periodic heat flow was developed to calculate the effective in-plane (face parallel) diffusivity of a two layer system. The effective diffusivity of diamond/silicon samples was measured using a laser pulse technique. The thermal conductivity of the films was measured to be 13.5 W/cm K, which is better than that of a type Ia natural diamond. Laser induced damage experiments were performed on bare Si substrates, diamond film coated Si, and diamond film windows. Significant improvements in the LIDT were obtained for diamond film coated Si compared to the bare Si.

  9. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    NASA Astrophysics Data System (ADS)

    Liu, Xuezhang; Wei, Qiuping; Yu, Zhiming; Yang, Taiming; Zhai, Hao

    2013-01-01

    Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 1011 cm-2, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  10. Below-Band-Gap Laser Ablation Of Diamond For TEM

    NASA Technical Reports Server (NTRS)

    George, Thomas; Foote, Marc C.; Vasquez, Richard P.; Fortier, Edward P.; Posthill, John B.

    1995-01-01

    Thin, electron-transparent layers of diamond for examination in transmission electron microscope (TEM) fabricated from thicker diamond substrates by using laser beam to ablate surface of substrate. Involves use of photon energy below band gap. Growing interest in use of diamond as bulk substrate and as coating material in variety of applications has given rise to increasing need for TEM for characterization of diamond-based materials. Below-band-gap laser ablation method helps to satisfy this need. Also applied in general to cutting and etching of diamonds.

  11. The mechanical properties of various chemical vapor deposition diamond structures compared to the ideal single crystal

    NASA Astrophysics Data System (ADS)

    Hess, Peter

    2012-03-01

    The structural and electronic properties of the diamond lattice, leading to its outstanding mechanical properties, are discussed. These include the highest elastic moduli and fracture strength of any known material. Its extreme hardness is strongly connected with the extreme shear modulus, which even exceeds the large bulk modulus, revealing that diamond is more resistant to shear deformation than to volume changes. These unique features protect the ideal diamond lattice also against mechanical failure and fracture. Besides fast heat conduction, the fast vibrational movement of carbon atoms results in an extreme speed of sound and propagation of crack tips with comparable velocity. The ideal mechanical properties are compared with those of real diamond films, plates, and crystals, such as ultrananocrystalline (UNC), nanocrystalline, microcrystalline, and homo- and heteroepitaxial single-crystal chemical vapor deposition (CVD) diamond, produced by metastable synthesis using CVD. Ultrasonic methods have played and continue to play a dominant role in the determination of the linear elastic properties, such as elastic moduli of crystals or the Young's modulus of thin films with substantially varying impurity levels and morphologies. A surprising result of these extensive measurements is that even UNC diamond may approach the extreme Young's modulus of single-crystal diamond under optimized deposition conditions. The physical reasons for why the stiffness often deviates by no more than a factor of two from the ideal value are discussed, keeping in mind the large variety of diamond materials grown by various deposition conditions. Diamond is also known for its extreme hardness and fracture strength, despite its brittle nature. However, even for the best natural and synthetic diamond crystals, the measured critical fracture stress is one to two orders of magnitude smaller than the ideal value obtained by ab initio calculations for the ideal cubic lattice. Currently

  12. Isotope analysis of diamond-surface passivation effect of high-temperature H{sub 2}O-grown atomic layer deposition-Al{sub 2}O{sub 3} films

    SciTech Connect

    Hiraiwa, Atsushi E-mail: qs4a-hriw@asahi-net.or.jp; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-06-07

    The Al{sub 2}O{sub 3} film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H{sub 2}O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D{sub 2}O instead of H{sub 2}O in the ALD and found that the Al{sub 2}O{sub 3} film formed at a conventional temperature (100 °C) incorporates 50 times more CH{sub 3} groups than the high-temperature film. This CH{sub 3} is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H{sub 2}O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H{sub 2}O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D{sub 2}O-oxidant ALD but found that the mass density and dielectric constant of D{sub 2}O-grown Al{sub 2}O{sub 3} films are smaller than those of H{sub 2}O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al{sub 2}O{sub 3} films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of

  13. Diamond sensors for future high energy experiments

    NASA Astrophysics Data System (ADS)

    Bachmair, Felix

    2016-09-01

    With the planned upgrade of the LHC to High-Luminosity-LHC [1], the general purpose experiments ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation tolerant technologies. Chemical Vapor Deposition CVD diamond is one such technology. CVD diamond sensors are an established technology as beam condition monitors in the highest radiation areas of all LHC experiments. The RD42-collaboration at CERN is leading the effort to use CVD diamond as a material for tracking detectors operating in extreme radiation environments. An overview of the latest developments from RD42 is presented including the present status of diamond sensor production, a study of pulse height dependencies on incident particle flux and the development of 3D diamond sensors.

  14. Plasma spraying method for forming diamond and diamond-like coatings

    DOEpatents

    Holcombe, C.E.; Seals, R.D.; Price, R.E.

    1997-06-03

    A method and composition is disclosed for the deposition of a thick layer of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate. The softened or molten composition crystallizes on the substrate to form a thick deposition layer comprising at least a diamond or diamond-like material. The selected composition includes at least glassy carbon as a primary constituent and may include at least one secondary constituent. Preferably, the secondary constituents are selected from the group consisting of at least diamond powder, boron carbide (B{sub 4}C) powder and mixtures thereof. 9 figs.

  15. Plasma spraying method for forming diamond and diamond-like coatings

    DOEpatents

    Holcombe, Cressie E.; Seals, Roland D.; Price, R. Eugene

    1997-01-01

    A method and composition for the deposition of a thick layer (10) of diamond or diamond-like material. The method includes high temperature processing wherein a selected composition (12) including at least glassy carbon is heated in a direct current plasma arc device to a selected temperature above the softening point, in an inert atmosphere, and is propelled to quickly quenched on a selected substrate (20). The softened or molten composition (18) crystallizes on the substrate (20) to form a thick deposition layer (10) comprising at least a diamond or diamond-like material. The selected composition (12) includes at least glassy carbon as a primary constituent (14) and may include at least one secondary constituent (16). Preferably, the secondary constituents (16) are selected from the group consisting of at least diamond powder, boron carbide (B.sub.4 C) powder and mixtures thereof.

  16. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    PubMed

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer. PMID:24738731

  17. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    PubMed

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  18. Physical and Tribological Characteristics of Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

    1994-01-01

    Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

  19. Effects of high energy Au-ion irradiation on the microstructure of diamond films

    SciTech Connect

    Chen, Shih-Show; Chen, Huang-Chin; Wang, Wei-Cheng; Lin, I-Nan; Chang, Ching-Lin; Lee, Chi-Young; Guo Jinghua

    2013-03-21

    The effects of 2.245 GeV Au-ion irradiation and subsequent annealing processes on the evolution of microstructure of diamond films with microcrystalline (MCD) or ultra-nanocrystalline (UNCD) granular structure were investigated, using near edge x-ray absorption fine structure and electron energy loss spectroscopy in transmission electron microscopy. For MCD films, the Au-ion irradiation disintegrated some of the diamond grains, resulting in the formation of nano-sized carbon clusters embedded in a matrix of amorphous carbon (a-C). The annealing process recrystallized the diamond grains and converted the a-C into nano-sized graphite particulates and, at the same time, induced the formation of nano-sized i-carbon clusters, the bcc structured carbon with a{sub 0} = 0.432 nm. In contrast, for UNCD films, the Au-ion irradiation transformed the grain boundary phase into nano-sized graphite, but insignificantly altered the crystallinity of the grains of the UNCD films. The annealing process recrystallized the materials. In some of the regions, the residual a-C phases were transformed into nano-sized graphites, whereas in other regions i-carbon nanoclusters were formed. The difference in irradiation-induced microstructural transformation behavior between the MCD and the UNCD films is ascribed to the different granular structures of the two types of films.

  20. Diamond nonlinear photonics

    NASA Astrophysics Data System (ADS)

    Hausmann, B. J. M.; Bulu, I.; Venkataraman, V.; Deotare, P.; Lončar, M.

    2014-05-01

    Despite progress towards integrated diamond photonics, studies of optical nonlinearities in diamond have been limited to Raman scattering in bulk samples. Diamond nonlinear photonics, however, could enable efficient, in situ frequency conversion of single photons emitted by diamond's colour centres, as well as stable and high-power frequency microcombs operating at new wavelengths. Both of these applications depend crucially on efficient four-wave mixing processes enabled by diamond's third-order nonlinearity. Here, we have realized a diamond nonlinear photonics platform by demonstrating optical parametric oscillation via four-wave mixing using single-crystal ultrahigh-quality-factor (1 × 106) diamond ring resonators operating at telecom wavelengths. Threshold powers as low as 20 mW are measured, and up to 20 new wavelengths are generated from a single-frequency pump laser. We also report the first measurement of the nonlinear refractive index due to the third-order nonlinearity in diamond at telecom wavelengths.

  1. One step deposition of highly adhesive diamond films on cemented carbide substrates via diamond/β-SiC composite interlayers

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Zhuang, Hao; Jiang, Xin

    2015-12-01

    Deposition of adherent diamond films on cobalt-cemented tungsten carbide substrates has been realized by application of diamond/beta-silicon carbide composite interlayers. Diamond top layers and the interlayers were deposited in one single process by hot filament chemical vapor deposition technique. Two different kinds of interlayers have been employed, namely, gradient interlayer and interlayer with constant composition. The distribution of diamond and beta-silicon carbide phases was precisely controlled by manipulating the gas phase composition. X-ray diffraction and Raman spectroscopy were employed to determine the existence of diamond, beta-silicon carbide and cobalt silicides (Co2Si, CoSi) phases, as well as the quality of diamond crystal and the residual stress in the films. Rockwell-C indentation tests were carried out to evaluate the film adhesion. It is revealed that the adhesion of the diamond film is drastically improved by employing the interlayer. This is mainly influenced by the residual stress in the diamond top layer, which is induced by the different thermal expansion coefficient of the film and the substrate. It is even possible to further suppress the stress by manipulating the distribution of diamond and beta-silicon carbide in the interlayer. The most adhesive diamond film on cemented carbide is thus obtained by employing a gradient composite interlayer.

  2. 'Diamond Jenness': A Tough Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic of the target area called 'Diamond Jenness' was taken after NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool for a second time.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  3. 'Diamond Jenness': Before the Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic of the rock called 'Diamond Jenness' was snapped on sol 177 before NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool, or 'Rat.'

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer. On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  4. 'Diamond Jenness': After the Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic taken by NASA's Mars Exploration Rover Opportunity shows the rock dubbed 'Diamond Jenness.' It was taken on sol 177 (July 23, 2004) after the rover first ground into the rock with its rock abrasion tool, or 'Rat.' The rover later ground into the rock a second time. A sliced spherule, or 'blueberry,' is visible in the upper left corner of the hole.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  5. Electrically conductive diamond electrodes

    DOEpatents

    Swain, Greg; Fischer, Anne ,; Bennett, Jason; Lowe, Michael

    2009-05-19

    An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably by chemical vapor deposition which are held together with a binder. The electrodes are useful for oxidation reduction in gas, such as hydrogen generation by electrolysis.

  6. Germanium: a new catalyst for diamond synthesis and a new optically active impurity in diamond.

    PubMed

    Palyanov, Yuri N; Kupriyanov, Igor N; Borzdov, Yuri M; Surovtsev, Nikolay V

    2015-01-01

    Diamond attracts considerable attention as a versatile and technologically useful material. For many demanding applications, such as recently emerged quantum optics and sensing, it is important to develop new routes for fabrication of diamond containing defects with specific optical, electronic and magnetic properties. Here we report on successful synthesis of diamond from a germanium-carbon system at conditions of 7 GPa and 1,500-1,800 °C. Both spontaneously nucleated diamond crystals and diamond growth layers on seeds were produced in experiments with reaction time up to 60 h. We found that diamonds synthesized in the Ge-C system contain a new optical centre with a ZPL system at 2.059 eV, which is assigned to germanium impurities. Photoluminescence from this centre is dominated by zero-phonon optical transitions even at room temperature. Our results have widened the family of non-metallic elemental catalysts for diamond synthesis and demonstrated the creation of germanium-related optical centres in diamond. PMID:26435400

  7. Germanium: a new catalyst for diamond synthesis and a new optically active impurity in diamond

    PubMed Central

    Palyanov, Yuri N.; Kupriyanov, Igor N.; Borzdov, Yuri M.; Surovtsev, Nikolay V.

    2015-01-01

    Diamond attracts considerable attention as a versatile and technologically useful material. For many demanding applications, such as recently emerged quantum optics and sensing, it is important to develop new routes for fabrication of diamond containing defects with specific optical, electronic and magnetic properties. Here we report on successful synthesis of diamond from a germanium-carbon system at conditions of 7 GPa and 1,500–1,800 °C. Both spontaneously nucleated diamond crystals and diamond growth layers on seeds were produced in experiments with reaction time up to 60 h. We found that diamonds synthesized in the Ge-C system contain a new optical centre with a ZPL system at 2.059 eV, which is assigned to germanium impurities. Photoluminescence from this centre is dominated by zero-phonon optical transitions even at room temperature. Our results have widened the family of non-metallic elemental catalysts for diamond synthesis and demonstrated the creation of germanium-related optical centres in diamond. PMID:26435400

  8. Homoepitaxial Boron Doped Diamond Anvils as Heating Elements in a Diamond Anvil Cell

    NASA Astrophysics Data System (ADS)

    Montgomery, Jeffrey; Samudrala, Gopi; Smith, Spencer; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel

    2013-03-01

    Recent advances in designer-diamond technology have allowed for the use of electrically and thermally conducting homoepitaxially-grown layers of boron-doped diamond (grown at 1200 °C with a 2% mixture of CH4 in H, resulting in extremely high doping levels ~ 1020/cm3) to be used as heating elements in a diamond anvil cell (DAC). These diamonds allow for precise control of the temperature inside of the diamond anvil itself, particularly when coupled with a cryostat. Furthermore, the unmatched thermally conducting nature of diamond ensures that no significant lateral gradient in temperature occurs across the culet area. Since a thermocouple can easily be attached anywhere on the diamond surface, we can also measure diamond temperatures directly. With two such heaters, one can raise sample temperatures uniformly, or with any desired gradient along the pressure axis while preserving optical access. In our continuing set of benchmark experiments, we use two newly created matching heater anvils with 500 μm culets to analyze the various fluorescence emission lines of ruby microspheres, which show more complicated behavior than traditional ruby chips. We also report on the temperature dependence of the high-pressure Raman modes of paracetamol (C8H9NO2) up to 20 GPa.

  9. Diamond bio electronics.

    PubMed

    Linares, Robert; Doering, Patrick; Linares, Bryant

    2009-01-01

    The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

  10. Diamond bio electronics.

    PubMed

    Linares, Robert; Doering, Patrick; Linares, Bryant

    2009-01-01

    The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions. PMID:19745488

  11. Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

    SciTech Connect

    Liu, F. B.; Jing, B.; Cui, Y.; Di, J. J.; Qu, M.

    2015-04-15

    The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond film are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed.

  12. Diamond Synthesis Employing Nanoparticle Seeds

    NASA Technical Reports Server (NTRS)

    Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

    2014-01-01

    Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  13. Diamonds for beam instrumentation

    SciTech Connect

    Griesmayer, Erich

    2013-04-19

    Diamond is perhaps the most versatile, efficient and radiation tolerant material available for use in beam detectors with a correspondingly wide range of applications in beam instrumentation. Numerous practical applications have demonstrated and exploited the sensitivity of diamond to charged particles, photons and neutrons. In this paper, a brief description of a generic diamond detector is given and the interaction of the CVD diamond detector material with protons, electrons, photons and neutrons is presented. Latest results of the interaction of sCVD diamond with 14 MeV mono-energetic neutrons are shown.

  14. Diamond/aluminium nitride composites for efficient thermal management applications

    SciTech Connect

    Cervenka, J.; Dontschuk, N.; Prawer, S.; Ladouceur, F.; Duvall, S. G.

    2012-07-30

    Synthetic diamond/AlN composite materials have been fabricated by a combination of microwave plasma-assisted chemical vapor deposition and molecular beam epitaxy. These wide band gap semiconductor heterojunctions show promises for many applications, including thermal management, deep ultraviolet light emitting devices, and high power and high temperature electronics. Here, we report results of an interface study of polycrystalline diamond layers grown on single crystal AlN(0001). High resolution transmission microscopy revealed atomically sharp interfaces between diamond and AlN. Temperature dependent Raman spectroscopy measurements showed reduced thermal resistance on diamond-coated AlN substrates compared to uncoated AlN at temperatures above 330 K.

  15. The Nature of Diamonds

    NASA Astrophysics Data System (ADS)

    Harlow, George E.

    1997-10-01

    The paragon of physical perfection and a sparkling example of Earth's forces at work, the diamond has fascinated all realms of society, from starlets to scientists. The Nature of Diamonds is a comprehensive look at nature's most coveted gem. A handsome, large-format book, The Nature of Diamonds is an authoritative and richly-illustrated tribute to the diamond. Leading geologists, gemologists, physicists, and cultural observers cover every facet of the stone, from its formation in the depths of the Earth, its ascent to the surface, and its economic, regal, social, and technological roles. Cutting-edge research takes the reader to the frontiers of diamond exploration and exploitation, from the Arctic wastes to the laboratories where diamonds are created for massive road shredders that rip up and then re-create superhighways. Here also is an overview of cutting, from the rough stones in Roman rings to the highly-faceted stones we see today, and a glimpse into the business of diamonds. Finally, The Nature of Diamonds chronicles scientific and cultural history and explores the diamond as both a sacred and a social symbol, including a picture history of betrothal rings. Wide-ranging illustrations explain the geology of diamonds, chart the history of mining from its origins in India and Brazil through the diamond rush in South Africa and today's high-tech enterprises, and capture the brilliance and beauty of this extraordinary gem. _

  16. Catalytic effect of ultrananocrystalline Fe₃O₄ on algal bio-crude production via HTL process.

    PubMed

    Rojas-Pérez, Arnulfo; Diaz-Diestra, Daysi; Frias-Flores, Cecilia B; Beltran-Huarac, Juan; Das, K C; Weiner, Brad R; Morell, Gerardo; Díaz-Vázquez, Liz M

    2015-11-14

    We report a comprehensive quantitative study of the production of refined bio-crudes via a controlled hydrothermal liquefaction (HTL) process using Ulva fasciata macroalgae (UFMA) as biomass and ultrananocrystalline Fe3O4 (UNCFO) as catalyst. X-ray diffraction and electron microscopy were applied to elucidate the formation of the high-quality nanocatalysts. Gas chromatography-mass spectroscopy (GC-MS) and CHNS analyses showed that the bio-crude yield and carbon/oxygen ratios increase as the amount of UNCFO increases, reaching a peak value of 32% at 1.25 wt% (a 9% increase when compared to the catalyst-free yield). The bio-crude is mainly composed of fatty acids, alcohols, ketones, phenol and benzene derivatives, and hydrocarbons. Their relative abundance changes as a function of catalyst concentration. FTIR spectroscopy and vibrating sample magnetometry revealed that the as-produced bio-crudes are free of iron species, which accumulate in the generated bio-chars. Our findings also indicate that the energy recovery values via the HTL process are sensitive to the catalyst loading, with a threshold loading of 1.25 wt%. GC-MS studies show that the UNCFO not only influences the chemical nature of the resulting bio-crudes and bio-chars, but also the amount of fixed carbons in the solid residues. The detailed molecular characterization of the bio-crudes and bio-chars catalyzed by UNCFO represents the first systematic study reported using UFMA. This study brings forth new avenues to advance the highly-pure bio-crude production employing active, heterogeneous catalyst materials that are recoverable and recyclable for continuous thermochemical reactions.

  17. Raman spectroscopy of diamond and doped diamond.

    PubMed

    Prawer, Steven; Nemanich, Robert J

    2004-11-15

    The optimization of diamond films as valuable engineering materials for a wide variety of applications has required the development of robust methods for their characterization. Of the many methods used, Raman microscopy is perhaps the most valuable because it provides readily distinguishable signatures of each of the different forms of carbon (e.g. diamond, graphite, buckyballs). In addition it is non-destructive, requires little or no specimen preparation, is performed in air and can produce spatially resolved maps of the different forms of carbon within a specimen. This article begins by reviewing the strengths (and some of the pitfalls) of the Raman technique for the analysis of diamond and diamond films and surveys some of the latest developments (for example, surface-enhanced Raman and ultraviolet Raman spectroscopy) which hold the promise of providing a more profound understanding of the outstanding properties of these materials. The remainder of the article is devoted to the uses of Raman spectroscopy in diamond science and technology. Topics covered include using Raman spectroscopy to assess stress, crystalline perfection, phase purity, crystallite size, point defects and doping in diamond and diamond films.

  18. Diamond particle detectors systems in high energy physics

    NASA Astrophysics Data System (ADS)

    Oh, A.

    2015-04-01

    With the first three years of the LHC running complete, ATLAS and CMS are planning to upgrade their innermost tracking layers with more radiation hard technologies. Chemical Vapor Deposition (CVD) diamond is one such technology. CVD diamond has been used extensively in beam condition monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. The lessons learned in constructing the ATLAS Beam Conditions Monitor (BCM), Diamond Beam Monitor (DBM) and the CMS Pixel Luminosity Telescope (PLT) all of which are based on CVD diamond with the goal of elucidating the issues that should be addressed for future diamond based detector systems. The first beam test results of prototype diamond devices with 3D detector geometry should further enhance the radiation tolerance of this material.

  19. Nano-inclusions in diamond: Evidence of diamond genesis

    NASA Astrophysics Data System (ADS)

    Wirth, R.

    2015-12-01

    The use of Focused Ion Beam technology (FIB) for TEM sample preparation introduced approximately 15 years ago revolutionized the application of TEM in Geosciences. For the first time, FIB enabled cutting samples for TEM use from exactly the location we are interested in. Applied to diamond investigation, this technique revealed the presence of nanometre-sized inclusions in diamond that have been simply unknown before. Nanoinclusions in diamond from different location and origin such as diamonds from the Lower and Upper Mantle, metamorphic diamonds (Kazakhstan, Erzgebirge, Bohemia), diamonds from ophiolites (Tibet, Mongolia, Xinjiang, Ural Mountains), diamonds from igneous rocks (Hawaii, Kamchatka) and impact diamonds (Popigai Crater, Siberia) have been investigated during the last 15 years. The major conclusion of all these TEM studies is, that the nanoinclusions, their phases and phase composition together with the micro- and nanostructure evidence the origin of diamond and genesis of diamond. We can discriminate Five different mechanisms of diamond genesis in nature are observed: Diamond crystallized from a high-density fluid (Upper mantle and metamorphic diamond). Diamond crystallized from carbonatitic melt (Lower mantle diamond). Diamond precipitates from a metal alloy melt (Diamond from ophiolites). Diamond crystallized by gas phase condensation or chemical vapour condensation (CVD) (Lavas from Kamchatka, xenoliths in Hawaiian lavas). Direct transformation of graphite into diamond.

  20. Ultrafast transformation of graphite to diamond: an ab initio study of graphite under shock compression.

    PubMed

    Mundy, Christopher J; Curioni, Alessandro; Goldman, Nir; Will Kuo, I-F; Reed, Evan J; Fried, Laurence E; Ianuzzi, Marcella

    2008-05-14

    We report herein ab initio molecular dynamics simulations of graphite under shock compression in conjunction with the multiscale shock technique. Our simulations reveal that a novel short-lived layered diamond intermediate is formed within a few hundred of femtoseconds upon shock loading at a shock velocity of 12 kms (longitudinal stress>130 GPa), followed by formation of cubic diamond. The layered diamond state differs from the experimentally observed hexagonal diamond intermediate found at lower pressures and previous hydrostatic calculations in that a rapid buckling of the graphitic planes produces a mixture of hexagonal and cubic diamond (layered diamond). Direct calculation of the x-ray absorption spectra in our simulations reveals that the electronic structure of the final state closely resembles that of compressed cubic diamond. PMID:18532830

  1. Ultrafast transformation of graphite to diamond: an ab initio study of graphite under shock compression.

    PubMed

    Mundy, Christopher J; Curioni, Alessandro; Goldman, Nir; Will Kuo, I-F; Reed, Evan J; Fried, Laurence E; Ianuzzi, Marcella

    2008-05-14

    We report herein ab initio molecular dynamics simulations of graphite under shock compression in conjunction with the multiscale shock technique. Our simulations reveal that a novel short-lived layered diamond intermediate is formed within a few hundred of femtoseconds upon shock loading at a shock velocity of 12 kms (longitudinal stress>130 GPa), followed by formation of cubic diamond. The layered diamond state differs from the experimentally observed hexagonal diamond intermediate found at lower pressures and previous hydrostatic calculations in that a rapid buckling of the graphitic planes produces a mixture of hexagonal and cubic diamond (layered diamond). Direct calculation of the x-ray absorption spectra in our simulations reveals that the electronic structure of the final state closely resembles that of compressed cubic diamond.

  2. Diamond tool machining of materials which react with diamond

    DOEpatents

    Lundin, Ralph L.; Stewart, Delbert D.; Evans, Christopher J.

    1992-01-01

    Apparatus for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond.

  3. Diamond tool machining of materials which react with diamond

    DOEpatents

    Lundin, R.L.; Stewart, D.D.; Evans, C.J.

    1992-04-14

    An apparatus is described for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond. 1 figs.

  4. A micro-scale hot wire anemometer based on low stress (Ni/W) multi-layers deposited on nano-crystalline diamond for air flow sensing

    NASA Astrophysics Data System (ADS)

    Talbi, A.; Gimeno, L.; Gerbedoen, J.-C.; Viard, R.; Soltani, A.; Mortet, V.; Preobrazhensky, V.; Merlen, A.; Pernod, P.

    2015-12-01

    A linear array of microscale thermal anemometers has been designed, fabricated and characterized. The sensitive element consists of a self-compensated-stress multilayer (Ni/W) patterned to form a wire with length, width, and thickness close to 200 μm, 5 μm and 2 μm respectively. The wire is deposited and supported by prongs made of nano-crystalline diamond (NCD) of about 2 μm in thickness. Due to its high Young’s modulus, NCD allows a very high mechanical toughness without the need for thicker support for the hot wire. Also, depending on grain size, the NCD is able to present thermal conductivity smaller than 10 W mK-1, providing good thermal insulation from the substrate and less conductive end losses to the prongs. The sensor was characterized experimentally. Its electrical and thermal properties were obtained first in the absence of fluid flow. The results confirm the effectiveness of thermal insulation and the mechanical robustness of the structure. The fluidic characterizations were performed and analysed in the case of an airflow with velocities of up to 30 m s-1.

  5. Optimizing growth and post treatment of diamond for high capacitance neural interfaces.

    PubMed

    Tong, Wei; Fox, Kate; Zamani, Akram; Turnley, Ann M; Ganesan, Kumaravelu; Ahnood, Arman; Cicione, Rosemary; Meffin, Hamish; Prawer, Steven; Stacey, Alastair; Garrett, David J

    2016-10-01

    Electrochemical and biological properties are two crucial criteria in the selection of the materials to be used as electrodes for neural interfaces. For neural stimulation, materials are required to exhibit high capacitance and to form intimate contact with neurons for eliciting effective neural responses at acceptably low voltages. Here we report on a new high capacitance material fabricated using nitrogen included ultrananocrystalline diamond (N-UNCD). After exposure to oxygen plasma for 3 h, the activated N-UNCD exhibited extremely high electrochemical capacitance greater than 1 mF/cm(2), which originates from the special hybrid sp(2)/sp(3) structure of N-UNCD. The in vitro biocompatibility of the activated N-UNCD was then assessed using rat cortical neurons and surface roughness was found to be critical for healthy neuron growth, with best results observed on surfaces with a roughness of approximately 20 nm. Therefore, by using oxygen plasma activated N-UNCD with appropriate surface roughness, and considering the chemical and mechanical stability of diamond, the fabricated neural interfaces are expected to exhibit high efficacy, long-term stability and a healthy neuron/electrode interface. PMID:27424214

  6. Optimizing growth and post treatment of diamond for high capacitance neural interfaces.

    PubMed

    Tong, Wei; Fox, Kate; Zamani, Akram; Turnley, Ann M; Ganesan, Kumaravelu; Ahnood, Arman; Cicione, Rosemary; Meffin, Hamish; Prawer, Steven; Stacey, Alastair; Garrett, David J

    2016-10-01

    Electrochemical and biological properties are two crucial criteria in the selection of the materials to be used as electrodes for neural interfaces. For neural stimulation, materials are required to exhibit high capacitance and to form intimate contact with neurons for eliciting effective neural responses at acceptably low voltages. Here we report on a new high capacitance material fabricated using nitrogen included ultrananocrystalline diamond (N-UNCD). After exposure to oxygen plasma for 3 h, the activated N-UNCD exhibited extremely high electrochemical capacitance greater than 1 mF/cm(2), which originates from the special hybrid sp(2)/sp(3) structure of N-UNCD. The in vitro biocompatibility of the activated N-UNCD was then assessed using rat cortical neurons and surface roughness was found to be critical for healthy neuron growth, with best results observed on surfaces with a roughness of approximately 20 nm. Therefore, by using oxygen plasma activated N-UNCD with appropriate surface roughness, and considering the chemical and mechanical stability of diamond, the fabricated neural interfaces are expected to exhibit high efficacy, long-term stability and a healthy neuron/electrode interface.

  7. Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures

    SciTech Connect

    Williams, B.E.; Glass, J.T.

    1989-03-01

    Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold /111/ faceted diamond crystals were predominant on a film grown at 0.3% CH/sub 4/ in H/sub 2/ while fourfold /100/ facets were observed on films grown in 1.0% and 2.0% CH/sub 4/ in H/sub 2/. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of /111/ twins, /111/ stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 A epitaxial layer of ..beta..--SiC at the diamond-silicon interface of a film grown with 0.3% CH/sub 4/ in H/sub 2/ while no such layer was observed on a diamond film grown in 2.0% CH/sub 4/ in H/sub 2/.

  8. Diamond nucleation using polyethene

    DOEpatents

    Morell, Gerardo; Makarov, Vladimir; Varshney, Deepak; Weiner, Brad

    2013-07-23

    The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

  9. Diamond Nucleation Using Polyethene

    NASA Technical Reports Server (NTRS)

    Morell, Gerardo (Inventor); Makarov, Vladimir (Inventor); Varshney, Deepak (Inventor); Weiner, Brad (Inventor)

    2013-01-01

    The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

  10. Diamond films: Historical perspective

    SciTech Connect

    Messier, R.

    1993-01-01

    This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

  11. Method for growth of CVD diamond on thin film refractory coatings and glass ceramic materials

    NASA Astrophysics Data System (ADS)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1994-09-01

    This paper describes a new method for significantly improving diamond film quality and growth rate on insulating substrates and thin films. The usual method of abrading the substrate surface with diamond particles yields good quality CVD diamond films at reasonable deposition rates on semiconducting materials like silicon. However, on insulating materials like fused silica and sapphire, the conventional method of diamond seeding and surface abrasion almost always results in slow growth rates and poor quality films. Current in-house diamond nucleation and growth studies have focused on depositing CVD diamond on substrates such as fused silica, sapphire, and glass ceramics. Diamond was grown successfully on these types of materials using a sacrificial metal layer method called metal induced nucleation of diamond (MIND). This technique offers a way to deposit diamond on glassy materials with improved adhesion and at lower deposition temperatures (less than 650 degree(s)C). In addition, the MIND technique can be used in combination with metal masking and conventional etching to deposit patterns of diamond. The MIND method was combined with another in-house developed technique called sputtered refractory interlayer nucleation technique (SPRINT). Diamond-crystallite size and orientation can be controlled with SPRINT to fabricate low-scatter diamond films. Both techniques are discussed. A reliable, efficient method for growing diamond on insulating materials significantly enhances the feasibility for practical applications of CVD diamond technology. For example, further development of the MIND technique may provide low-scatter, protective diamond films on sapphire and glass ceramics for visible-wavelength windows and missile domes. For electronic applications, reduction in the growth temperature makes CVD diamond more compatible with existing semiconductor processes. The lower growth temperature also helps to alleviate diffusion problems in metal alloys and facilitates

  12. Thermally-induced single-crystal-to-single-crystal transformations from a 2D two-fold interpenetrating square lattice layer to a 3D four-fold interpenetrating diamond framework and its application in dye-sensitized solar cells.

    PubMed

    Gao, Song; Fan, Rui Qing; Wang, Xin Ming; Wei, Li Guo; Song, Yang; Du, Xi; Xing, Kai; Wang, Ping; Yang, Yu Lin

    2016-07-28

    In this work, a rare 2D → 3D single-crystal-to-single-crystal transformation (SCSC) is observed in metal-organic coordination complexes, which is triggered by thermal treatment. The 2D two-fold interpenetrating square lattice layer [Cd(IBA)2]n (1) is irreversibly converted into a 3D four-fold interpenetrating diamond framework {[Cd(IBA)2(H2O)]·2.5H2O}n (2) (HIBA = 4-(1H-imidazol-1-yl)benzoic acid). Consideration is given to these two complexes with different interpenetrating structures and dimensionality, and their influence on photovoltaic properties are studied. Encouraged by the UV-visible absorption and HOMO-LUMO energy states matched for sensitizing TiO2, the two complexes are employed in combination with N719 in dye-sensitized solar cells (DSSCs) to compensate absorption in the ultraviolet and blue-violet region, offset competitive visible light absorption of I3(-) and reducing charge the recombination of injected electrons. After co-sensitization with 1 and 2, the device co-sensitized by 1/N719 and 2/N719 to yield overall efficiencies of 7.82% and 8.39%, which are 19.94% and 28.68% higher than that of the device sensitized only by N719 (6.52%). Consequently, high dimensional interpenetrating complexes could serve as excellent co-sensitizers and have application in DSSCs. PMID:27356177

  13. Thermally-induced single-crystal-to-single-crystal transformations from a 2D two-fold interpenetrating square lattice layer to a 3D four-fold interpenetrating diamond framework and its application in dye-sensitized solar cells.

    PubMed

    Gao, Song; Fan, Rui Qing; Wang, Xin Ming; Wei, Li Guo; Song, Yang; Du, Xi; Xing, Kai; Wang, Ping; Yang, Yu Lin

    2016-07-28

    In this work, a rare 2D → 3D single-crystal-to-single-crystal transformation (SCSC) is observed in metal-organic coordination complexes, which is triggered by thermal treatment. The 2D two-fold interpenetrating square lattice layer [Cd(IBA)2]n (1) is irreversibly converted into a 3D four-fold interpenetrating diamond framework {[Cd(IBA)2(H2O)]·2.5H2O}n (2) (HIBA = 4-(1H-imidazol-1-yl)benzoic acid). Consideration is given to these two complexes with different interpenetrating structures and dimensionality, and their influence on photovoltaic properties are studied. Encouraged by the UV-visible absorption and HOMO-LUMO energy states matched for sensitizing TiO2, the two complexes are employed in combination with N719 in dye-sensitized solar cells (DSSCs) to compensate absorption in the ultraviolet and blue-violet region, offset competitive visible light absorption of I3(-) and reducing charge the recombination of injected electrons. After co-sensitization with 1 and 2, the device co-sensitized by 1/N719 and 2/N719 to yield overall efficiencies of 7.82% and 8.39%, which are 19.94% and 28.68% higher than that of the device sensitized only by N719 (6.52%). Consequently, high dimensional interpenetrating complexes could serve as excellent co-sensitizers and have application in DSSCs.

  14. Raman Characterisation of Diamond Coatings Using Different Laser Wavelengths

    NASA Astrophysics Data System (ADS)

    Haubner, Roland; Rudigier, Moritz

    Diamond layers can show different morphologies, i.e. well-facetted, fine-grained and ballas diamond. Additionally, the types NCD (nanocrystalline diamond), UNCD (ultra nanocrystalline diamond) and various types of amorphous carbon (a- C, a-CH …) are known. To characterise the various carbon deposits Raman spectroscopy is most common, because this technique is simple to handle. With a modern Raman spectrometer, provided with three different laser units (wavelengths 472,681 nm/ blue, 532,1 nm/ green, 632,81 nm/ red), the same spot of a sample can be measured several times. A set of diamond coatings, representing the different morphologies, and moreover, boron doped levels were selected for Raman characterisation. Varying the laser wavelength, highly different Raman spectra were obtained and their interpretation is quite difficult.

  15. The use of thin diamond films in fiber-optic low-coherence interferometers

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.

    2016-01-01

    In this paper we present the use of thin diamond films in fiber-optic low-coherence interferometers. Two kinds of diamond surfaces were used: undoped diamond film and boron- doped diamond film. They were deposited on glass plates as well as silicon layers. A conventionally used mirror was used as a reference layer. Diamond films were deposited using Microwave Plasma Enhanced Chemical Vapour Deposition (μPE CVD) system. Measurements were performed using two superluminescent diodes (SLD) with wavelengths of 1300 mm and 1550 mm. The optimal conditions for each layers were examined: the required wavelength of the light source and the length of Fabry-Perot interferometer cavity. Metrological parameters of Fabry-Perot interferometer with different mirrors were compared. The presented thin diamond films may be an interesting alternative to the commonly used reflective surfaces.

  16. Diamond and diamond-like carbon films for advanced electronic applications

    SciTech Connect

    Siegal, M.P.; Friedmann, T.A.; Sullivan, J.P.

    1996-03-01

    Aim of this laboratory-directed research and development (LDRD) project was to develop diamond and/or diamond-like carbon (DLC) films for electronic applications. Quality of diamond and DLC films grown by chemical vapor deposition (CVD) is not adequate for electronic applications. Nucleation of diamond grains during growth typically results in coarse films that must be very thick in order to be physically continuous. DLC films grown by CVD are heavily hydrogenated and are stable to temperatures {le} 400{degrees}C. However, diamond and DLC`s exceptional electronic properties make them candidates for integration into a variety of microelectronic structures. This work studied new techniques for the growth of both materials. Template layers have been developed for the growth of CVD diamond films resulting in a significantly higher nucleation density on unscratched or unprepared Si surfaces. Hydrogen-free DLC with temperature stability {le} 800{degrees}C has been developed using energetic growth methods such as high-energy pulsed-laser deposition. Applications with the largest system impact include electron-emitting materials for flat-panel displays, dielectrics for interconnects, diffusion barriers, encapsulants, and nonvolatile memories, and tribological coatings that reduce wear and friction in integrated micro-electro-mechanical devices.

  17. Comparative studies on photonic band structures of diamond and hexagonal diamond using the multiple scattering method

    NASA Astrophysics Data System (ADS)

    Chen, Hui; Zhang, Weiyi; Wang, Zhenlin

    2004-02-01

    Photonic band structures are investigated for both diamond and hexagonal diamond crystals composed of dielectric spheres, and absolute photonic band gaps (PBGs) are found in both cases. In agreement with both Karathanos and Moroz's calculations, a large PBG occurs between the eighth and ninth bands in diamond crystal, but a PBG in hexagonal diamond crystal is found to occur between the sixteenth and seventeenth bands because of the doubling of dielectric spheres in the primitive cell. To explore the physical mechanism of how the photonic band gap might be broadened, we have compared the electric field distributions (|E|2) of the 'valence' and 'conduction' band edges. Results show that the field intensity for the 'conduction' band locates in the inner core of the sphere while that of the 'valence' band concentrates in the outer shell. With this motivation, double-layer spheres are designed to enhance the corresponding photonic band gaps; the PBG is increased by 35% for the diamond structure, and 14% for the hexagonal diamond structure.

  18. Fundamentals of ultrananocrystallie diamond (UNCD) thin films as biomaterials for developmental biology : embryonic fibroblasts growth on the surface of (UNCD) films.

    SciTech Connect

    Shi, B.; Jin, Q.; Chen, L.; Auciello, O.

    2008-09-13

    Ultrananocrystalline diamond (UNCD) films possess numerous valuable good physical, chemical and mechanical properties, making UNCD an excellent material for implantable biodevices. However, one very important property required for biomaterials i.e., biocompatibility has not been studied for UNCD. In this research, biocompatible UNCD films were synthesized. It was found that UNCD film coated substrates can dramatically promote the growth of mouse embryonic fibroblasts (MEFs), while the uncoated substrates inhabit cell attachment. Through analyzing the microstructure and the surface chemistry of UNCD, the mechanisms of cell growth on UNCD were investigated. Given the unique properties of UNCD on inertness and toughness, the results consolidate UNCD film as the leading coating candidate for the next generation of medical implanted devices.

  19. Diamonds in detonation soot

    NASA Technical Reports Server (NTRS)

    Greiner, N. Roy; Phillips, Dave; Johnson, J. D.; Volk, Fred

    1990-01-01

    Diamonds 4 to 7 nm in diameter have been identified and partially isolated from soot formed in detonations of carbon-forming composite explosives. The morphology of the soot has been examined by transmission electron microscopy (TEM), and the identity of the diamond has been established by the electron diffraction pattern of the TEM samples and by the X-ray diffraction (XRD) pattern of the isolated solid. Graphite is also present in the form of ribbons of turbostatic structure with a thickness of 2 to 4 nm. A fraction, about 25 percent of the soot by weight, was recovered from the crude soot after oxidation of the graphite with fuming perchloric acid. This fraction showed a distinct XRD pattern of diamond and the diffuse band of amorphous carbon. The IR spectrum of these diamonds closely matches that of diamonds recovered from meteorites (Lewis et al., 1987), perhaps indicating similar surface properties after the oxidation. If these diamonds are produced in the detonation itself or during the initial expansion, they exhibit a phenomenal crystal growth rate (5 nm/0.00001 s equal 1.8 m/hr) in a medium with a very low hydrogen/carbon ratio. Because the diamonds will be carried along with the expanding gases, they will be accelerated to velocities approaching 8 km/s.

  20. Fabrication of diamond based sensors for use in extreme environments

    DOE PAGES

    Samudrala, Gopi K.; Moore, Samuel L.; Vohra, Yogesh K.

    2015-04-23

    Electrical and magnetic sensors can be lithographically fabricated on top of diamond substrates and encapsulated in a protective layer of chemical vapor deposited single crystalline diamond. This process when carried out on single crystal diamond anvils employed in high pressure research is termed as designer diamond anvil fabrication. These designer diamond anvils allow researchers to study electrical and magnetic properties of materials under extreme conditions without any possibility of damaging the sensing elements. We describe a novel method for the fabrication of designer diamond anvils with the use of maskless lithography and chemical vapor deposition in this paper. This methodmore » can be utilized to produce diamond based sensors which can function in extreme environments of high pressures, high and low temperatures, corrosive and high radiation conditions. Here, we demonstrate applicability of these diamonds under extreme environments by performing electrical resistance measurements during superconducting transition in rare earth doped iron-based compounds under high pressures to 12 GPa and low temperatures to 10 K.« less

  1. Fabrication of diamond based sensors for use in extreme environments

    SciTech Connect

    Samudrala, Gopi K.; Moore, Samuel L.; Vohra, Yogesh K.

    2015-04-23

    Electrical and magnetic sensors can be lithographically fabricated on top of diamond substrates and encapsulated in a protective layer of chemical vapor deposited single crystalline diamond. This process when carried out on single crystal diamond anvils employed in high pressure research is termed as designer diamond anvil fabrication. These designer diamond anvils allow researchers to study electrical and magnetic properties of materials under extreme conditions without any possibility of damaging the sensing elements. We describe a novel method for the fabrication of designer diamond anvils with the use of maskless lithography and chemical vapor deposition in this paper. This method can be utilized to produce diamond based sensors which can function in extreme environments of high pressures, high and low temperatures, corrosive and high radiation conditions. Here, we demonstrate applicability of these diamonds under extreme environments by performing electrical resistance measurements during superconducting transition in rare earth doped iron-based compounds under high pressures to 12 GPa and low temperatures to 10 K.

  2. Layers

    NASA Astrophysics Data System (ADS)

    Hong, K. J.; Jeong, T. S.; Youn, C. J.

    2014-09-01

    The temperature-dependent photoresponse characteristics of MnAl2S4 layers have been investigated, for the first time, by use of photocurrent (PC) spectroscopy. Three peaks were observed at all temperatures. The electronic origin of these peaks was associated with band-to-band transitions from the valence-band states Γ4( z), Γ5( x), and Γ5( y) to the conduction-band state Γ1( s). On the basis of the relationship between PC-peak energy and temperature, the optical band gap could be well expressed by the expression E g( T) = E g(0) - 2.80 × 10-4 T 2/(287 + T), where E g(0) was estimated to be 3.7920 eV, 3.7955 eV, and 3.8354 eV for the valence-band states Γ4( z), Γ5( x), and Γ5( y), respectively. Results from PC spectroscopy revealed the crystal-field and spin-orbit splitting were 3.5 meV and 39.9 meV. The gradual decrease of PC intensity with decreasing temperature can be explained on the basis of trapping centers associated with native defects in the MnAl2S4 layers. Plots of log J ph, the PC current density, against 1/ T, revealed a dominant trap level in the high-temperature region. By comparing PC and the Hall effect results, we confirmed that this trap level is a shallow donor 18.9 meV below the conduction band.

  3. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

    NASA Astrophysics Data System (ADS)

    Inaba, Masafumi; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi; Kawarada, Hiroshi

    2016-07-01

    The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

  4. Mechanical stresses and amorphization of ion-implanted diamond

    NASA Astrophysics Data System (ADS)

    Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

    2013-06-01

    Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

  5. Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

    SciTech Connect

    Bogdanov, G.; Ludwig, R.; Wiggins, J.; Bertagnolli, K.

    2014-02-18

    We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

  6. Fabrication of diamond shells

    DOEpatents

    Hamza, Alex V.; Biener, Juergen; Wild, Christoph; Woerner, Eckhard

    2016-11-01

    A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.

  7. Amorphous diamond films

    DOEpatents

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  8. Diamond Ranch High School.

    ERIC Educational Resources Information Center

    Betsky, Aaron

    2000-01-01

    Highlights award-winning Diamond Ranch High School (California) that was designed and built on a steep site around Los Angeles considered unsatisfactory for building due to its unstable soils. Building organization is discussed, and photos are provided. (GR)

  9. Synthesis of diamonds

    NASA Technical Reports Server (NTRS)

    Estes, M. F.; Rasquin, J. R.

    1970-01-01

    Shock wave transmitted through a solid exponential horn generates heat and pressure to convert part of a charge of graphite to diamonds. The shock wave is generated in the apparatus by a complex of magnetic fields and eddy currents.

  10. California: Diamond Valley

    Atmospheric Science Data Center

    2014-05-15

    ... County is billed as the largest earthworks construction project in U.S. history. Construction began in 1995 and involved 31 million ... water storage capacity. In addition to routine water management, Diamond Valley Lake is designed to provide protection against ...

  11. PROCESS FOR COLORING DIAMONDS

    DOEpatents

    Dugdale, R.A.

    1960-07-19

    A process is given for coloring substantially colorless diamonds in the blue to blue-green range and comprises the steps of irradiating the colorless diamonds with electrons having an energy within the range 0.5 to 2 Mev to obtain an integrated electron flux of between 1 and 2 x 10/sup 18/ thc diamonds may be irradiated 1 hr when they take on a blue color with a slight green tint: After being heated at about 500 deg C for half an hour they become pure blue. Electrons within this energy range contam sufficient energy to displace the diamond atoms from their normal lattice sites into interstitial sites, thereby causing the color changes.

  12. High-mobility diamond

    NASA Astrophysics Data System (ADS)

    Landstrass, Maurice I.

    1994-04-01

    Recent improvements in the CVD diamond deposition process have made possible the fabrication of diamond photoconductive diodes with carrier mobility and lifetime exceeding the values typical of natural gemstones. One of the more surprising recent results is that the best room-temperature carrier properties have been measured on polycrystalline diamond films. The combined electron- hole mobility, as measured by transient photoconductivity at low carrier densities, is 4000 square centimeters per volt per second at electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond films. The collection distance within the diamond films, at the highest applied fields, is comparable to the average film grain size, indicative of little or no carrier scattering at grain boundaries. A comparison of SIMS measurements with electrical results suggest that impurity incorporation in the near grain boundary regions are responsible for controlling the carrier mobility.

  13. Cryotribology of diamond and graphite

    SciTech Connect

    Iwasa, Yukikazu; Ashaboglu, A.F.; Rabinowicz, E.R.

    1996-12-31

    An experimental study was carried out on the tribological behavior of materials of interest in cryogenic applications, focusing on diamond and graphite. Both natural diamond (referred in the text as diamond) and chemical-vapor-deposition (CVD) diamond (CVD-diamond) were used. The experiment was carried out using a pin-on-disk tribometer capable of operating at cryogenic temperatures, from 4.2 to 293 K. Two basic scenarios of testing were used: (1) frictional coefficient ({mu}) vs velocity (v) characteristics at constant temperatures; (2) {mu} vs temperature (T) behavior at fixed sliding speeds. For diamond/CVD-diamond, graphite/CVD-diamond, stainless steel/CVD-diamond pairs, {mu}`s are virtually velocity independent. For each of diamond/graphite, alumina/graphite, and graphite/graphite pairs, the {partial_derivative}{mu}/{partial_derivative}v characteristic is favorable, i.e., positive. For diamond/CVD-diamond and graphite/CVD-diamond pairs, {mu}`s are nearly temperature independent between in the range 77 - 293 K. Each {mu} vs T plot for pin materials sliding on graphite disks has a peak at a temperature in the range 100 - 200 K.

  14. Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.

    SciTech Connect

    Auciello, O.; Sumant, A.; Goldsmith, C.; O'Brien, S.; Sampath, S.; Gudeman, C; Wang, W.; Hwang, J.; Swonger, J.; Carlisle, J.; Balachandran, S.; MEMtronics Corp.; Innovative Micro Technology; Lehigh Univ.; Peregrine Semiconductor; Advanced Diamond Technologies

    2010-01-01

    Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO{sub 2} and Si{sub 3}N{sub 4}. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD{sup (R)}) (2-5 nm grains) and nanocrystalline diamond (NCD) (10-100 nm grains) films exhibit one of the highest Young's modulus ({approx} 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q {ge} 10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials ({approx}10 mJ/m{sup 2}-close to van der Waals attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO{sub 2}, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.

  15. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    PubMed

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-02

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  16. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    PubMed Central

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-01-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air. PMID:26831205

  17. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles

    NASA Astrophysics Data System (ADS)

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-02-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air.

  18. Enhancement of oxidation resistance via a self-healing boron carbide coating on diamond particles.

    PubMed

    Sun, Youhong; Meng, Qingnan; Qian, Ming; Liu, Baochang; Gao, Ke; Ma, Yinlong; Wen, Mao; Zheng, Weitao

    2016-01-01

    A boron carbide coating was applied to diamond particles by heating the particles in a powder mixture consisting of H3BO3, B and Mg. The composition, bond state and coverage fraction of the boron carbide coating on the diamond particles were investigated. The boron carbide coating prefers to grow on the diamond (100) surface than on the diamond (111) surface. A stoichiometric B4C coating completely covered the diamond particle after maintaining the raw mixture at 1200 °C for 2 h. The contribution of the boron carbide coating to the oxidation resistance enhancement of the diamond particles was investigated. During annealing of the coated diamond in air, the priory formed B2O3, which exhibits a self-healing property, as an oxygen barrier layer, which protected the diamond from oxidation. The formation temperature of B2O3 is dependent on the amorphous boron carbide content. The coating on the diamond provided effective protection of the diamond against oxidation by heating in air at 1000 °C for 1 h. Furthermore, the presence of the boron carbide coating also contributed to the maintenance of the static compressive strength during the annealing of diamond in air. PMID:26831205

  19. The Diamond Makers

    NASA Astrophysics Data System (ADS)

    Hazen, Robert M.

    1999-08-01

    Since time immemorial, we have treasured diamonds for their exquisite beauty and unrivaled hardness. Yet, most of the earth's diamonds lie deep underground and totally unaccessible to us--if only we knew how to fabricate them! In The Diamond Makers Robert Hazen vividly recounts the very human desire to exceed nature and create a synthetic diamond. Spanning centuries of ground-breaking science, instances of bitter rivalry, cases of outright fraud and self-delusion, Hazen blends drama and science to reveal the extraordinary technological advances and devastating failures of the diamond industry. Along the way, readers will be introduced to the brilliant, often eccentric and controversial, pioneers of high-pressure research who have harnessed crushing pressures and scorching temperatures to transform almost any carbon-rich material, from road tar to peanut butter, into the most prized of all gems. Robert M. Hazen is the author of fifteen books, including the bestseller, Science Matters: Achieving Scientific Literacy, which he wrote with James Trefil. Dr. Hazen has won numerous awards for his research and scientific writing.

  20. Diamond collecting in northern Colorado.

    USGS Publications Warehouse

    Collins, D.S.

    1982-01-01

    The discovery of numerous diamond-bearing kimberlite diatremes in the N Front Range of Colorado and Wyoming is of both scientific and economic interest. Species recovered from heavy-mineral concentrates include Cr-diopside, spinel, Mg-ilmenite, pyrope and diamond. A nodule tentatively identified as a graphite-diamond eclogite was also found. -G.W.R.

  1. Making Diamond in the Laboratory

    ERIC Educational Resources Information Center

    Strong, Herbert

    1975-01-01

    Discusses the graphite to diamond transformation and a phase diagram for carbon. Describes high temperature-higher pressure experimental apparatus and growth of diamonds from seed crystals. Reviews properties of the diamond which suggest uses for the synthetic product. Illustrations with text. (GH)

  2. Diamond Measuring Machine

    SciTech Connect

    Krstulic, J.F.

    2000-01-27

    The fundamental goal of this project was to develop additional capabilities to the diamond measuring prototype, work out technical difficulties associated with the original device, and perform automated measurements which are accurate and repeatable. For this project, FM and T was responsible for the overall system design, edge extraction, and defect extraction and identification. AccuGem provided a lab and computer equipment in Lawrence, 3D modeling, industry expertise, and sets of diamonds for testing. The system executive software which controls stone positioning, lighting, focusing, report generation, and data acquisition was written in Microsoft Visual Basic 6, while data analysis and modeling were compiled in C/C++ DLLs. All scanning parameters and extracted data are stored in a central database and available for automated analysis and reporting. The Phase 1 study showed that data can be extracted and measured from diamond scans, but most of the information had to be manually extracted. In this Phase 2 project, all data required for geometric modeling and defect identification were automatically extracted and passed to a 3D modeling module for analysis. Algorithms were developed which automatically adjusted both light levels and stone focus positioning for each diamond-under-test. After a diamond is analyzed and measurements are completed, a report is printed for the customer which shows carat weight, summarizes stone geometry information, lists defects and their size, displays a picture of the diamond, and shows a plot of defects on a top view drawing of the stone. Initial emphasis of defect extraction was on identification of feathers, pinpoints, and crystals. Defects were plotted color-coded by industry standards for inclusions (red), blemishes (green), and unknown defects (blue). Diamonds with a wide variety of cut quality, size, and number of defects were tested in the machine. Edge extraction, defect extraction, and modeling code were tested for

  3. Process for making diamonds

    NASA Technical Reports Server (NTRS)

    Rasquin, J. R.; Estes, M. F. (Inventor)

    1973-01-01

    A description is given of a device and process for making industrial diamonds. The device is composed of an exponential horn tapering from a large end to a small end, with a copper plate against the large end. A magnetic hammer abuts the copper plate. The copper plate and magnetic hammer function together to create a shock wave at the large end of the horn. As the wave propagates to the small end, the extreme pressure and temperature caused by the wave transforms the graphite, present in an anvil pocket at the small end, into diamonds.

  4. Dosimetry with diamond detectors

    NASA Astrophysics Data System (ADS)

    Gervino, G.; Marino, C.; Silvestri, F.; Lavagno, A.; Truc, F.

    2010-05-01

    In this paper we present the dosimetry analysis in terms of stability and repeatability of the signal and dose rate dependence of a synthetic single crystal diamond grown by Chemical Vapor Deposition (CVD) technique. The measurements carried out by 5 MeV X-ray photons beam show very promising results, even if the dose rate detector response points out that the charge trapping centers distribution is not uniform inside the crystal volume. This handicap that affects the detectors performances, must be ascribed to the growing process. Synthetic single crystal diamonds could be a valuable alternative to air ionization chambers for quality beam control and for intensity modulated radiation therapy beams dosimetry.

  5. Experimental study of diamond resorption during mantle metasomatism

    NASA Astrophysics Data System (ADS)

    Fedorchuk, Yana; Schmidt, Max W.; Liebske, Christian

    2014-05-01

    and CO2 diamond crystals develop ditrigonal outline of {111} faces, striation or hillocks along the edges, and shallow negatively oriented trigonal etch pits with flat or pointed bottom. Presence of SiO2 in the fluid resulted in multi-corner morphology, layering and / or more intensive etching of {111} faces. Dissolution in carbonate melt in the absence of water produced deep stepped-wall hexagonal and trigonal etch pits with negative orientation. The three resorption styles show strong resemblance to the secondary morphology of natural diamonds. This suggests that CHO fluid, aqueous silicate melt, and carbonatatitic melt are metasomatic agents reacting with natural diamonds in subcratonic mantle. The comparison of the experimentally-induced resorption styles to those on natural diamonds show that mantle metasomatism induced by CHO fluid develop morphologies similar to those developed in kimberlite magma. This indicates that significant proportion of kimberlite-hosted diamonds may show resorption features of mantle origin. Aqueous silicate melt induces step-faced multi-corner resorption morphology, similar to natural diamonds with nitrogen aggregation corresponding to eclogitic diamonds. Dissolution in carbonatitic melt results in complex morphologies with deep hexagonal pits similar to natural diamonds with nitrogen data corresponding to peridotitic diamonds.

  6. Fluidized bed deposition of diamond

    DOEpatents

    Laia, Jr., Joseph R.; Carroll, David W.; Trkula, Mitchell; Anderson, Wallace E.; Valone, Steven M.

    1998-01-01

    A process for coating a substrate with diamond or diamond-like material including maintaining a substrate within a bed of particles capable of being fluidized, the particles having substantially uniform dimensions and the substrate characterized as having different dimensions than the bed particles, fluidizing the bed of particles, and depositing a coating of diamond or diamond-like material upon the substrate by chemical vapor deposition of a carbon-containing precursor gas mixture, the precursor gas mixture introduced into the fluidized bed under conditions resulting in excitation mechanisms sufficient to form the diamond coating.

  7. Laser Patterning of Diamond. Part II. Surface Nondiamond Carbon Formation and its Removal

    SciTech Connect

    Smedley, J.; Jaye, C; Bohon, J; Rao, T; Fischer, D

    2009-01-01

    As diamond becomes more prevalent for electronic and research applications, methods of patterning diamond will be required. One such method, laser ablation, has been investigated in a related work. We report on the formation of surface nondiamond carbon during laser ablation of both polycrystalline and single-crystal synthetic diamonds. Near edge x-ray absorption fine structure spectroscopy was used to confirm that the nondiamond carbon layer formed during the ablation was amorphous, and Fourier transform infrared absorption spectroscopy (FTIR) was used to estimate the thickness of this layer to be {approx} 60 nm. Ozone cleaning was used to remove the nondiamond carbon layer.

  8. Kinetics of diamond-silicon reaction under high pressure-high temperature conditions

    NASA Astrophysics Data System (ADS)

    Pantea, Cristian

    In this dissertation work, the kinetics of the reaction between diamond and silicon at high pressure-high temperature conditions was investigated. This study was motivated by the extremely limited amount of information related to the kinetics of the reaction in diamond-silicon carbide composites formation. It was found that the reaction between diamond and melted silicon and the subsequent silicon carbide formation is a two-stage process. The initial stage is a result of direct reaction of melted silicon with carbon atoms from the diamond surface, the phase boundary reaction. Further growth of SiC is much more complicated and when the outer surfaces of diamond crystals are covered with the silicon carbide layer it involves diffusion of carbon and silicon atoms through the SiC layer. The reaction takes place differently for the two regions of stability of carbon. In the graphite-stable region, the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, while in the diamond-stable region there is no intermediary step for the reaction. The data obtained at HPHT were fitted by the Avrami-Erofeev equation. It was found that the reaction is isotropic, the beta-SiC grown on different faces of the diamond crystals showing the same reaction rate, and that the controlling mechanism for the reaction is the diffusion. In the graphite-stable region the activation energy, 402 kJ/mol is slightly higher than in the diamond-stable region, 260 kJ/mol, as the reaction between diamond and melted silicon is associated with the diamond-to-graphite phase transition, which has higher activation energy. In the diamond-stable region, the calculated activation energy is higher for micron size diamond powders (≈260 kJ/mol), while for nanocrystalline diamond powders a lower value of 170 kJ/mol was obtained. This effect was attributed to nanocrystalline structure and strained bonds within grain boundaries in SiC formed from nanosize diamond

  9. Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

    NASA Astrophysics Data System (ADS)

    Radhika, R.; Ramachandra Rao, M. S.

    2016-11-01

    Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

  10. Diamond/AlN Thin Films for Optical Applications

    SciTech Connect

    Knoebber, F.; Bludau, O.; Williams, O. A.; Sah, R. E.; Kirste, L.; Baeumler, M.; Nebel, C. E.; Ambacher, O.; Cimalla, V.; Lebedev, V.; Leopold, S.; Paetz, D.

    2010-11-01

    In this work we report on membranes made of nanocrystalline diamond (NCD) and AlN for the use in tunable micro-optics. For the growth of the AlN and NCD thin films, magnetron sputtering and chemical vapor deposition techniques have been used, respectively. A chemical-mechanical polishing process of NCD layers has been introduced, which is crucial for the growth of c-oriented, fiber textured AlN films. AlN layers deposited on as grown and polished nanocrystalline diamond along with free standing membranes have been compared by studying microstructure, surface morphology, piezoelectrical response as well as optical properties.

  11. Chemical vapor deposition of diamond thin films on titanium silicon carbide

    NASA Astrophysics Data System (ADS)

    Yang, Songlan

    2008-10-01

    Chemical vapor deposition (CVD) has been the main method for synthesizing diamond thin films on hetero substrate materials since 1980s. It has been well acknowledged that both nucleation and growth of diamond on non-diamond surfaces without pre-treatment are very difficult and slow. Furthermore, the weak adhesion between the diamond thin films and substrates has been a major problem for widespread application of diamond thin films. Up to now, Si has been the most frequently used substrate for the study of diamond thin films and various methods, including bias and diamond powder scratching, have been applied to enhance diamond nucleation density. In the present study, nucleation and growth of diamond thin films on Ti3SiC2, a newly developed ceramic-metallic material, using Microwave Plasma Enhanced (MPE) and Hot- Filament (HF) CVD reactors were carried out. In addition, synchrotron-based Near Edge Extended X-Ray Absorption Fine Structure Spectroscopy (NEXAFS) was used to identify the electronic and chemical structures of various NCD films. The results from MPECVD showed that a much higher diamond nucleation density and a much higher film growth rate can be obtained on Ti3SiC2 compared with on Si. Consequently, nanocrystalline diamond (NCD) thin films were feasibly synthesized on Ti3SiC2 under the typical conditions for microcrystalline diamond film synthesis. Furthermore, the diamond films on Ti3SiC 2 exhibited better adhesion than on Si. The early stage growth of diamond thin films on Ti3SiC2 by HFCVD indicated that a nanowhisker-like diamond-graphite composite layer, different from diamond nucleation on Si, initially formed on the surface of Ti3SiC2, which resulted in high diamond nucleation density. These results indicate that Ti3SiC 2 has great potentials to be used both as substrates and interlayers on metals for diamond thin film deposition and application. This research may greatly expand the tribological application of both Ti3SiC 2 and diamond thin films

  12. Carbonado: natural polycrystalline diamond.

    PubMed

    Trueb, L F; De Wys, E C

    1969-08-22

    Carbonados are porous aggregates of mostly xenomorphic diamond crystallites ranging in diameter from a fraction of a micron to over 20 microns. Crystalline inclusions (up to 3 percent) occur in the pores of the crystallites and consist mainly of orthoclase and small amounts of other igneous, metamorphic, and secondary minerals. PMID:17742270

  13. DIAMOND AMPLIFIED PHOTOCATHODES.

    SciTech Connect

    SMEDLEY,J.; BEN-ZVI, I.; BOHON, J.; CHANG, X.; GROVER, R.; ISAKOVIC, A.; RAO, T.; WU, Q.

    2007-11-26

    High-average-current linear electron accelerators require photoinjectors capable of delivering tens to hundreds of mA average current, with peak currents of hundreds of amps. Standard photocathodes face significant challenges in meeting these requirements, and often have short operational lifetimes in an accelerator environment. We report on recent progress toward development of secondary emission amplifiers for photocathodes, which are intended to increase the achievable average current while protecting the cathode from the accelerator. The amplifier is a thin diamond wafer which converts energetic (few keV) primary electrons into hundreds of electron-hole pairs via secondary electron emission. The electrons drift through the diamond under an external bias and are emitted into vacuum via a hydrogen-terminated surface with negative electron affinity (NEA). Secondary emission gain of over 200 has been achieved. Two methods of patterning diamond, laser ablation and reactive-ion etching (RIE), are being developed to produce the required geometry. A variety of diagnostic techniques, including FTIR, SEM and AFM, have been used to characterize the diamonds.

  14. CVD diamond - fundamental phenomena

    SciTech Connect

    Yarbrough, W.A.

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  15. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

    PubMed

    Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A; Schreiner, Peter R; Shen, Zhi-Xun; Melosh, Nicholas A; Vučković, Jelena

    2016-01-13

    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

  16. Improvements in the Formation of Boron-Doped Diamond Coatings on Platinum Wires Using the Novel Nucleation Process (NNP)

    PubMed Central

    Fhaner, Mathew; Zhao, Hong; Bian, Xiaochun; Galligan, James J.; Swain, Greg M.

    2010-01-01

    In order to increase the initial nucleation density for the growth of boron-doped diamond on platinum wires, we employed the novel nucleation process (NNP) originally developed by Rotter et al. and discussed by others [1–3]. This pretreatment method involves (i) the initial formation of a thin carbon layer over the substrate followed by (ii) ultrasonic seeding of this “soft” carbon layer with nanoscale particles of diamond. This two-step pretreatment is followed by the deposition of boron-doped diamond by microwave plasma-assisted CVD. Both the diamond seed particles and sites on the carbon layer itself function as the initial nucleation zones for diamond growth from an H2-rich source gas mixture. We report herein on the characterization of the pre-growth carbon layer formed on Pt as well as boron-doped films grown for 2, 4 and 6 h post NNP pretreatment. Results from scanning electron microscopy, Raman spectroscopy and electrochemical studies are reported. The NNP method increases the initial nucleation density on Pt and leads to the formation of a continuous diamond film in a shorter deposition time than is typical for wires pretreated by conventional ultrasonic seeding. The results indicate that the pregrowth layer itself consists of nanoscopic domains of diamond and functions well to enhance the initial nucleation of diamond without any diamond powder seeding. PMID:21617759

  17. Lower pressure synthesis of diamond material

    DOEpatents

    Lueking, Angela; Gutierrez, Humberto; Narayanan, Deepa; Burgess Clifford, Caroline E.; Jain, Puja

    2010-07-13

    Methods of synthesizing a diamond material, particularly nanocrystalline diamond, diamond-like carbon and bucky diamond are provided. In particular embodiments, a composition including a carbon source, such as coal, is subjected to addition of energy, such as high energy reactive milling, producing a milling product enriched in hydrogenated tetrahedral amorphous diamond-like carbon compared to the coal. A milling product is treated with heat, acid and/or base to produce nanocrystalline diamond and/or crystalline diamond-like carbon. Energy is added to produced crystalline diamond-like carbon in particular embodiments to produce bucky diamonds.

  18. Forty years of development in diamond tools

    NASA Astrophysics Data System (ADS)

    The growth of the diamond industry in Western Countries since the First World War is surveyed. The articles described deal specifically with the development of the industrial diamond and diamond tool sector in different countries. All data point to continuing rapid expansion in the diamond tool sector. The West consumes 80 percent of world industrial diamond production. Diamond consumption increased sharply in the U.S. during World War 2. There are 300 diamond manufacturers in the U.S. today. In 1940, there were 25. In Japan, consumption of industrial diamonds has increased several times. In Italy, there has been a 75 fold increase in the production of diamond tools since 1959.

  19. Photo-stimulated low electron temperature high current diamond film field emission cathode

    DOEpatents

    Shurter; Roger Philips , Devlin; David James , Moody; Nathan Andrew , Taccetti; Jose Martin , Russell; Steven John

    2012-07-24

    An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

  20. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  1. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  2. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Rough diamond. 592.310 Section 592... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply...

  3. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  4. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  5. Development of Designer Diamond Anvils for High Pressure-High-Temperature Experiments in Support of the Stockpile Stewardship Program

    SciTech Connect

    Yogesh K. Vohra

    2005-05-12

    The focus of this program at the University of Alabama at Birmingham (UAB) is to develop the next generation of designer diamond anvils that can perform simultaneous joule heating and temperature profile measurements in a diamond anvil cell. A series of tungsten-rhenium thermocouples will be fabricated onto to the anvil and encapsulated by a chemical vapor deposited diamond layer to allow for a complete temperature profile measurement across the anvil. The tip of the diamond anvil will be engineered to reduce the thermal conductivity so that the tungsten-heating coils can be deposited on top of this layer. Several different approaches will be investigated to engineer the tip of the diamond anvil for reduction in thermal conductivity (a) isotopic mixture of 12C and 13C in the diamond layer, (b) doping of diamond with impurities (nitrogen and/or boron), and (c) growing diamond in a higher concentration of methane in hydrogen plasma. Under this academic alliance with Lawrence Livermore National Laboratory (LLNL), PI and his graduate students will use the lithographic and diamond polishing facility at LLNL. This proposed next generation of designer diamond anvils will allow multi-tasking capability with the ability to measure electrical, magnetic, structural and thermal data on actinide materials with unparallel sensitivity in support of the stockpile stewardship program.

  6. Catalytic effect of ultrananocrystalline Fe3O4 on algal bio-crude production via HTL process

    NASA Astrophysics Data System (ADS)

    Rojas-Pérez, Arnulfo; Diaz-Diestra, Daysi; Frias-Flores, Cecilia B.; Beltran-Huarac, Juan; Das, K. C.; Weiner, Brad R.; Morell, Gerardo; Díaz-Vázquez, Liz M.

    2015-10-01

    We report a comprehensive quantitative study of the production of refined bio-crudes via a controlled hydrothermal liquefaction (HTL) process using Ulva fasciata macroalgae (UFMA) as biomass and ultrananocrystalline Fe3O4 (UNCFO) as catalyst. X-ray diffraction and electron microscopy were applied to elucidate the formation of the high-quality nanocatalysts. Gas chromatography-mass spectroscopy (GC-MS) and CHNS analyses showed that the bio-crude yield and carbon/oxygen ratios increase as the amount of UNCFO increases, reaching a peak value of 32% at 1.25 wt% (a 9% increase when compared to the catalyst-free yield). The bio-crude is mainly composed of fatty acids, alcohols, ketones, phenol and benzene derivatives, and hydrocarbons. Their relative abundance changes as a function of catalyst concentration. FTIR spectroscopy and vibrating sample magnetometry revealed that the as-produced bio-crudes are free of iron species, which accumulate in the generated bio-chars. Our findings also indicate that the energy recovery values via the HTL process are sensitive to the catalyst loading, with a threshold loading of 1.25 wt%. GC-MS studies show that the UNCFO not only influences the chemical nature of the resulting bio-crudes and bio-chars, but also the amount of fixed carbons in the solid residues. The detailed molecular characterization of the bio-crudes and bio-chars catalyzed by UNCFO represents the first systematic study reported using UFMA. This study brings forth new avenues to advance the highly-pure bio-crude production employing active, heterogeneous catalyst materials that are recoverable and recyclable for continuous thermochemical reactions.We report a comprehensive quantitative study of the production of refined bio-crudes via a controlled hydrothermal liquefaction (HTL) process using Ulva fasciata macroalgae (UFMA) as biomass and ultrananocrystalline Fe3O4 (UNCFO) as catalyst. X-ray diffraction and electron microscopy were applied to elucidate the formation of

  7. Raman investigation of diamond films

    SciTech Connect

    Feng, Li-Ming

    1993-12-31

    Extensive Raman investigations were conducted on a wide range of diamond films whose structures were dilineated by optical and confocal microscopy. The Raman Spectra from one extreme of this range indicates a very intense 1331 cm{sup {minus}1} line diagnostic of bulk crystalline diamond. Microscopy of the corresponding film shows the presence of many large true diamond crystallite. The 1331 cm{sup {minus}1} Raman line at the other extreme of the range, however, is virtually absent. It is replaced, at this extreme, by a very broad Raman contour whose maxima occur near 1355 cm{sup {minus}1} and 1575 cm{sup {minus}1}. Optical microscopy now reveals a complete lack of diamond crystallites. The ratio of the integrated Raman intensity of the 1331 cm{sup {minus}1} diamond line to the integral of the entire broad contour extending from {approx}1200 cm{sup {minus}1} to 1800 cm{sup {minus}1}, with maxima near 1355 cm{sup {minus}1} and 1575 cm{sup {minus}1}, was determined. This ratio rises with increasing diamond crystallite size, and it decreases as true diamond crystallites are replaced by diamond-like, but amorphous, hard carbon, which produces the broad Raman contour. The measured intensity ratio was analyzed in terms of a differential equation related to phonon coupling. The increase of the intensity ratio of the 1331 cm{sup {minus}1} diagnostic diamond peak is due to phono-phonon coupling between the diamond crystallites, as the concentration of the amorphous diamond-like carbon decreases. Confocal microscopy indicates many amorphous-like regions interspersed between diamond crystallites which account for the intensity loss, and agree with the Raman intensity measurements. These Raman measurements crystallinity versus amorphous hard-carbon character of thin diamond film.

  8. Most diamonds were created equal

    NASA Astrophysics Data System (ADS)

    Jablon, Brooke Matat; Navon, Oded

    2016-06-01

    Diamonds crystallize deep in the mantle (>150 km), leaving their carbon sources and the mechanism of their crystallization debatable. They can form from elemental carbon, by oxidation of reduced species (e.g. methane) or reduction of oxidized ones (e.g. carbonate-bearing minerals or melts), in response to decreasing carbon solubility in melts or fluids or due to changes in pH. The mechanism of formation is clear for fibrous diamonds that grew from the carbonate-bearing fluids trapped in their microinclusions. However, these diamonds look different and, based on their lower level of nitrogen aggregation, are much younger than most monocrystalline (MC) diamonds. In the first systematic search for microinclusions in MC diamonds we examined twinned crystals (macles), assuming that during their growth, microinclusions were trapped along the twinning plane. Visible mineral inclusions (>10 μm) and nitrogen aggregation levels in these clear macles are similar to other MC diamonds. We found 32 microinclusions along the twinning planes in eight out of 30 diamonds. Eight inclusions are orthopyroxene; four contain >50% K2O (probably as K2(Mg, Ca)(CO3)2); but the major element compositions of the remaining 20 are similar to those of carbonate-bearing high-density fluids (HDFs) found in fibrous diamonds. We conclude that the source of carbon for these macles and for most diamonds is carbonate-bearing HDFs similar to those found here and in fibrous diamonds. Combined with the old ages of MC diamonds (up to 3.5 Ga), our new findings suggest that carbonates have been introduced into the reduced lithospheric mantle since the Archaean and that the mechanism of diamond formation is the same for most diamonds.

  9. Carbon onions as nanoscopic pressure cells for diamond formation

    NASA Astrophysics Data System (ADS)

    Banhart, F.; Ajayan, P. M.

    1996-08-01

    SPHERICAL particles of carbon consisting of concentric graphite-like shells ('carbon onions') can be formed by electron irradiation of graphitic carbon materials1,2. Here we report that, when such particles are heated to ~700 °C and irradiated with electrons, their cores can be transformed to diamond. Under these conditions the spacing between layers in the carbon onions decreases from 0.31 in the outer shells (slightly less than the 0.34-nm layer spacing of graphite) to about 0.22 nm in the core, indicating considerable compression towards the particle centres. We find that this compression allows diamond to nucleate-in effect the carbon onions act as nanoscopic pressure cells for diamond formation.

  10. A charge transport study in diamond, surface passivated by high-k dielectric oxides

    SciTech Connect

    Kovi, Kiran Kumar Majdi, Saman; Gabrysch, Markus; Isberg, Jan

    2014-11-17

    The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

  11. Thermal diffusivity of diamond films using a laser pulse technique

    NASA Technical Reports Server (NTRS)

    Albin, Sacharia; Winfree, William P.; Crews, B. Scott

    1990-01-01

    Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective in-plane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamonds/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. The average effective diffusivity values are 1.47 + or - 0.03 and 1.83 + or - 0.10 yielding thermal diffusivity values of 7.46 + or - 0.90 and 7.33 + or - 0.70 sq cm/s respectively, for the two samples; the calculated thermal con ductivity values are 13.50 and 13.28 W/cmK, which are better than that of type 1a natural diamond. The phase and amplitude measurements give similar results.

  12. Formation of oriented nanostructures in diamond using metallic nanoparticles.

    PubMed

    Mehedi, H-A; Hebert, C; Ruffinatto, S; Eon, D; Omnes, F; Gheeraert, E

    2012-11-16

    A simple, fast and cost-effective etching technique to create oriented nanostructures such as pyramidal and cylindrical shaped nanopores in diamond membranes by self-assembled metallic nanoparticles is proposed. In this process, a diamond film is annealed with thin metallic layers in a hydrogen atmosphere. Carbon from the diamond surface is dissolved into nanoparticles generated from the metal film, then evacuated in the form of hydrocarbons and, consequently, the nanoparticles enter the crystal volume. In order to understand and optimize the etching process, the role of different parameters such as type of catalyst (Ni, Co, Pt, and Au), hydrogen gas, temperature and time of annealing, and microstructure of diamond (polycrystalline and nanocrystalline) were investigated. With this technique, nanopores with lateral sizes in the range of 10-100 nm, and as deep as about 600 nm, in diamond membranes were produced without any need for a lithography process, which opens the opportunities for fabricating porous diamond membranes for chemical sensing applications. PMID:23090452

  13. Surface Design and Engineering Toward Wear-Resistant, Self-Lubricant Diamond Films and Coatings. Chapter 10

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes three studies on the surface design, surface engineering, and tribology of chemical-vapor-deposited (CVD) diamond films and coatings toward wear-resistant, self-lubricating diamond films and coatings. Friction mechanisms and solid lubrication mechanisms of CVD diamond are stated. Effects of an amorphous hydrogenated carbon on CVD diamond, an amorphous, nondiamond carbon surface layer formed on CVD diamond by carbon and nitrogen ion implantation, and a materials combination of cubic boron nitride and CVD diamond on the adhesion, friction, and wear behaviors of CVD diamond in ultrahigh vacuum are described. How surface modification and the selected materials couple improved the tribological functionality of coatings, giving low coefficient of friction and good wear resistance, is explained.

  14. Structure and properties of diamond and diamond-like films

    SciTech Connect

    Clausing, R.E.

    1993-01-01

    This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

  15. Genetics Home Reference: Diamond-Blackfan anemia

    MedlinePlus

    ... Home Health Conditions Diamond-Blackfan anemia Diamond-Blackfan anemia Enable Javascript to view the expand/collapse boxes. ... PDF Open All Close All Description Diamond-Blackfan anemia is a disorder of the bone marrow . The ...

  16. Integrated diamond sapphire laser

    NASA Astrophysics Data System (ADS)

    Fork, Richard L.; Walker, Wesley W.; Laycock, Rustin L.; Green, Jason J. A.; Cole, Spencer T.

    2003-10-01

    We use analytic expressions and simulations to examine a model laser gain element formed by integrating diamond and a solid state laser material, such as, Ti:sapphire. The gain element is designed to provide in a single composite structure the thermal management capabilities of diamond and the optical amplification of the laser material. The model results indicate low temperature and a specific radial dependence of the heat transfer coefficient at the material interfaces are needed to access the highest average powers and highest quality optical fields. We outline paths designed to increase average output power of a lowest order mode laser oscillator based on these gain elements to megawatt levels. The long term goal is economically viable solar power delivered safely from space. The short term goal is a design strategy that will facilitate "proof of principle" demonstrations using currently accessible optical pump and thermal management capabilities.

  17. Hexagonal diamonds in meteorites: implications.

    PubMed

    Hanneman, R E; Strong, H M; Bundy, F P

    1967-02-24

    A new polymorph of carbon, hexagonal diamond, has been discovered in the Canyon Diablo and Goalpara meteorites. This phase had been synthesized recently under specific high-pressure conditions in the laboratory. Our results: provide strong evidence that diamonds found in these meteorites were produced by intense shock pressures acting on crystalline graphite inclusions present within the meteorite before impact, rather than by disintegration of larger, statically grown diamonds, as some theories propose. PMID:17830485

  18. Diamond films for laser hardening

    NASA Technical Reports Server (NTRS)

    Albin, S.; Watkins, L.; Ravi, K.; Yokota, S.

    1989-01-01

    Laser-damage experiments were performed on free-standing polycrystalline diamond films prepared by plasma-enhanced CVD. The high laser-induced stress resistance found for this material makes it useful for thin-film coatings for laser optics. Results for diamond-coated silicon substrates demonstrate the enhanced damage threshold imparted by diamond thin-film coatings to materials susceptible to laser damage.

  19. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1994-01-01

    A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.

  20. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1993-01-01

    A method of forming synthetic diamond on a substrate is disclosed. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond thickness on the substrate.

  1. Diamond turning of glass

    SciTech Connect

    Blackley, W.S.; Scattergood, R.O.

    1988-12-01

    A new research initiative will be undertaken to investigate the critical cutting depth concepts for single point diamond turning of brittle, amorphous materials. Inorganic glasses and a brittle, thermoset polymer (organic glass) are the principal candidate materials. Interrupted cutting tests similar to those done in earlier research are Ge and Si crystals will be made to obtain critical depth values as a function of machining parameters. The results will provide systematic data with which to assess machining performance on glasses and amorphous materials

  2. DIAMOND SECONDARY EMITTER

    SciTech Connect

    BEN-ZVI, I.; RAO, T.; BURRILL, A.; CHANG, X.; GRIMES, J.; RANK, J.; SEGALOV, Z.; SMEDLEY, J.

    2005-10-09

    We present the design and experimental progress on the diamond secondary emitter as an electron source for high average power injectors. The design criteria for average currents up to 1 A and charge up to 20 nC are established. Secondary Electron Yield (SEY) exceeding 200 in transmission mode and 50 in emission mode have been measured. Preliminary results on the design and fabrication of the self contained capsule with primary electron source and secondary electron emitter will also be presented.

  3. DIAMOND PEAK WILDERNESS, OREGON.

    USGS Publications Warehouse

    Sherrod, David R.; Moyle, Phillip R.

    1984-01-01

    No metallic mineral resources were identified during a mineral survey of the Diamond Peak Wilderness in Oregon. Cinder cones within the wilderness contain substantial cinder resources, but similar deposits that are more accessible occur outside the wilderness. The area could have geothermal resources, but available data are insufficient to evaluate their potential. Several deep holes could be drilled in areas of the High Cascades outside the wilderness, from which extrapolations of the geothermal potential of the several Cascade wilderness could be made.

  4. DIAMOND AMPLIFIER FOR PHOTOCATHODES.

    SciTech Connect

    RAO,T.; BEN-ZVI,I.; BURRILL,A.; CHANG,X.; HULBERT,S.; JOHNSON,P.D.; KEWISCH,J.

    2004-06-21

    We report a new approach to the generation of high-current, high-brightness electron beams. Primary electrons are produced by a photocathode (or other means) and are accelerated to a few thousand electron-volts, then strike a specially prepared diamond window. The large Secondary Electron Yield (SEY) provides a multiplication of the number of electrons by about two orders of magnitude. The secondary electrons drift through the diamond under an electric field and emerge into the accelerating proper of the ''gun'' through a Negative Electron Affinity surface of the diamond. The advantages of the new approach include the following: (1) Reduction of the number of primary electrons by the large SEY, i.e. a very low laser power in a photocathode producing the primaries. (2) Low thermal emittance due to the NEA surface and the rapid thermalization of the electrons. (3) Protection of the cathode from possible contamination from the gun, allowing the use of large quantum efficiency but sensitive cathodes. (4) Protection of the gun from possible contamination by the cathode, allowing the use of superconducting gun cavities. (5) Production of high average currents, up to ampere class. (6) Encapsulated design, making the ''load-lock'' systems unnecessary. This paper presents the criteria that need to be taken into account in designing the amplifier.

  5. Effects of hydrogen atoms on surface conductivity of diamond film

    SciTech Connect

    Liu, Fengbin Cui, Yan; Qu, Min; Di, Jiejian

    2015-04-15

    To investigate the effects of surface chemisorbed hydrogen atoms and hydrogen atoms in the subsurface region of diamond on surface conductivity, models of hydrogen atoms chemisorbed on diamond with (100) orientation and various concentrations of hydrogen atoms in the subsurface layer of the diamond were built. By using the first-principles method based on density functional theory, the equilibrium geometries and densities of states of the models were studied. The results showed that the surface chemisorbed hydrogen alone could not induce high surface conductivity. In addition, isolated hydrogen atoms in the subsurface layer of the diamond prefer to exist at the bond centre site of the C-C bond. However, such a structure would induce deep localized states, which could not improve the surface conductivity. When the hydrogen concentration increases, the C-H-C-H structure and C-3H{sub bc}-C structure in the subsurface region are more stable than other configurations. The former is not beneficial to the increase of the surface conductivity. However, the latter would induce strong surface states near the Fermi level, which would give rise to high surface conductivity. Thus, a high concentration of subsurface hydrogen atoms in diamond would make significant contributions to surface conductivity.

  6. Raman barometry of diamond formation

    NASA Astrophysics Data System (ADS)

    Izraeli, E. S.; Harris, J. W.; Navon, O.

    1999-11-01

    Pressures and temperatures of the diamond source region are commonly estimated using chemical equilibria between coexisting mineral inclusions. Here we present another type of geobarometer, based on determination of the internal pressure in olivine inclusions and the stresses in the surrounding diamond. Using Raman spectroscopy, pressures of 0.13 to 0.65 GPa were measured inside olivine inclusions in three diamonds from the Udachnaya mine in Siberia. Stresses in the diamond surrounding the inclusions indicated similar pressures (0.11-0.41 GPa). Nitrogen concentration and aggregation state in two of the diamonds yielded mantle residence temperatures of ˜1200°C. Using this temperature and the bulk moduli and thermal expansion of olivine and diamond, we calculated source pressures of 4.4-5.2 GPa. We also derived a linear approximation for the general dependence of the source pressure ( P0, GPa) on source temperature ( T0, °C) and the measured internal pressure in the inclusion ( Pi): P0=(3.259×10 -4Pi+3.285×10 -3) T0+0.9246 Pi+0.319. Raman barometry may be applied to other inclusions in diamonds or other inclusion-host systems. If combined with IR determination of the mantle residence temperature of the diamond, it allows estimation of the pressure at the source based on a non-destructive examination of a single diamond containing a single inclusion.

  7. Conversion of fullerenes to diamonds

    DOEpatents

    Gruen, Dieter M.

    1995-01-01

    A method of forming synthetic diamond or diamond-like films on a substrate surface. The method involves the steps of providing a vapor selected from the group of fullerene molecules or an inert gas/fullerene molecule mixture, providing energy to the fullerene molecules consisting of carbon-carbon bonds, the energized fullerene molecules breaking down to form fragments of fullerene molecules including C.sub.2 molecules and depositing the energized fullerene molecules with C.sub.2 fragments onto the substrate with farther fragmentation occurring and forming a thickness of diamond or diamond-like films on the substrate surface.

  8. Diamonds in ophiolites: Contamination or a new diamond growth environment?

    NASA Astrophysics Data System (ADS)

    Howell, D.; Griffin, W. L.; Yang, J.; Gain, S.; Stern, R. A.; Huang, J.-X.; Jacob, D. E.; Xu, X.; Stokes, A. J.; O'Reilly, S. Y.; Pearson, N. J.

    2015-11-01

    For more than 20 years, the reported occurrence of diamonds in the chromites and peridotites of the Luobusa massif in Tibet (a complex described as an ophiolite) has been widely ignored by the diamond research community. This skepticism has persisted because the diamonds are similar in many respects to high-pressure high-temperature (HPHT) synthetic/industrial diamonds (grown from metal solvents), and the finding previously has not been independently replicated. We present a detailed examination of the Luobusa diamonds (recovered from both peridotites and chromitites), including morphology, size, color, impurity characteristics (by infrared spectroscopy), internal growth structures, trace-element patterns, and C and N isotopes. A detailed comparison with synthetic industrial diamonds shows many similarities. Cubo-octahedral morphology, yellow color due to unaggregated nitrogen (C centres only, Type Ib), metal-alloy inclusions and highly negative δ13C values are present in both sets of diamonds. The Tibetan diamonds (n = 3) show an exceptionally large range in δ15N (-5.6 to + 28.7 ‰) within individual crystals, and inconsistent fractionation between {111} and {100} growth sectors. This in contrast to large synthetic HPHT diamonds grown by the temperature gradient method, which have with δ15N = 0 ‰ in {111} sectors and + 30 ‰ in {100} sectors, as reported in the literature. This comparison is limited by the small sample set combined with the fact the diamonds probably grew by different processes. However, the Tibetan diamonds do have generally higher concentrations and different ratios of trace elements; most inclusions are a NiMnCo alloy, but there are also some small REE-rich phases never seen in HPHT synthetics. These characteristics indicate that the Tibetan diamonds grew in contact with a C-saturated Ni-Mn-Co-rich melt in a highly reduced environment. The stable isotopes indicate a major subduction-related contribution to the chemical environment. The

  9. Surface damage on diamond membranes fabricated by ion implantation and lift-off

    SciTech Connect

    Drumm, V. S.; Alves, A. D. C.; Fairchild, B. A.; Ganesan, K.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Rubanov, S.; Kalish, R.; Feldman, L. C.

    2011-06-06

    Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

  10. Observation of higher stiffness in nanopolycrystal diamond than monocrystal diamond

    NASA Astrophysics Data System (ADS)

    Tanigaki, Kenichi; Ogi, Hirotsugu; Sumiya, Hitoshi; Kusakabe, Koichi; Nakamura, Nobutomo; Hirao, Masahiko; Ledbetter, Hassel

    2013-08-01

    Diamond is the stiffest known material. Here we report that nanopolycrystal diamond synthesized by direct-conversion method from graphite is stiffer than natural and synthesized monocrystal diamonds. This observation departs from the usual thinking that nanocrystalline materials are softer than their monocrystals because of a large volume fraction of soft grain-boundary region. The direct conversion causes the nondiffusional phase transformation to cubic diamond, producing many twins inside diamond grains. We give an ab initio-calculation twinned model that confirms the stiffening. We find that shorter interplane bonds along [111] are significantly strengthened near the twinned region, from which the superstiff structure originates. Our discovery provides a novel step forward in the search for superstiff materials.

  11. Observation of higher stiffness in nanopolycrystal diamond than monocrystal diamond.

    PubMed

    Tanigaki, Kenichi; Ogi, Hirotsugu; Sumiya, Hitoshi; Kusakabe, Koichi; Nakamura, Nobutomo; Hirao, Masahiko; Ledbetter, Hassel

    2013-01-01

    Diamond is the stiffest known material. Here we report that nanopolycrystal diamond synthesized by direct-conversion method from graphite is stiffer than natural and synthesized monocrystal diamonds. This observation departs from the usual thinking that nanocrystalline materials are softer than their monocrystals because of a large volume fraction of soft grain-boundary region. The direct conversion causes the nondiffusional phase transformation to cubic diamond, producing many twins inside diamond grains. We give an ab initio-calculation twinned model that confirms the stiffening. We find that shorter interplane bonds along [111] are significantly strengthened near the twinned region, from which the superstiff structure originates. Our discovery provides a novel step forward in the search for superstiff materials.

  12. Advanced laser diagnostics for diamond deposition research

    SciTech Connect

    Kruger, C.H.; Owano, T.G.; Wahl, E.H.

    1995-12-31

    Chemical Vapor Deposition (CVD) using thermal plasmas is attractive for diamond synthesis applications due to the inherently high reactant densities and throughput, but the associated high gas-phase collision rates in the boundary layer above the substrate produce steep thermal and species gradients which can drive the complex plasma chemistry away from optimal conditions. To understand and control these environments, accurate measurements of temperature and species concentrations within the reacting boundary layer are needed. This is challenging in atmospheric pressure reactors due to the highly luminous environment, steep thermal and species gradients, and small spatial scales. The applicability of degenerate four-wave mixing (DFWM) as a spectroscopic probe of atmospheric pressure reacting plasmas has been investigated. This powerful, nonlinear technique has been applied to the measurement of temperature and radical species concentrations in the boundary layer of a diamond growth substrate immersed in a flowing atmospheric pressure plasma. In-situ measurements of CH and C{sub 2} radicals have been performed to determine spatially resolved profiles of vibrational temperature, rotational temperature, and species concentration. Results of these measurements are compared with the predictions of a detailed numerical simulation.

  13. Influence of diamond surface termination on thermal boundary conductance between Al and diamond

    SciTech Connect

    Monachon, Christian; Weber, Ludger

    2013-05-14

    The effect of diamond surface treatment on the Thermal Boundary Conductance (TBC) between Al and diamond is investigated. The treatments consist in either of the following: exposition to a plasma of pure Ar, Ar:H and Ar:O, and HNO{sub 3}:H{sub 2}SO{sub 4} acid dip for various times. The surface of diamond after treatment is analyzed by X-ray Photoelectron Spectroscopy, revealing hydrogen termination for the as-received and Ar:H plasma treated samples, pure sp{sup 2} termination for Ar treated ones and oxygen (keton-like) termination for the other treatments. At ambient, all the specific treatments improve the TBC between Al and diamond from 23 {+-} 2 MW m{sup -2} K{sup -1} for the as-received to 65 {+-} 5, 125 {+-} 20, 150 {+-} 20, 180 {+-} 20 MW m{sup -2} K{sup -1} for the ones treated by Ar:H plasma, acid, pure Ar plasma, and Ar:O plasma with an evaporated Al layer on top, respectively. The effect of these treatments on temperature dependence are also observed and compared with the most common models available in the literature as well as experimental values in the same system. The results obtained show that the values measured for an Ar:O plasma treated diamond with Al sputtered on top stay consistently higher than the values existing in the literature over a temperature range from 78 to 290 K, probably due a lower sample surface roughness. Around ambient, the TBC values measured lay close to or even somewhat above the radiation limit, suggesting that inelastic or electronic processes may influence the transfer of heat at this metal/dielectric interface.

  14. Stable metallization for diamond and other materials

    NASA Technical Reports Server (NTRS)

    Bachli, Andreas (Inventor); Kolawa, Elzbieta (Inventor); Nicolet, Marc-Aurele (Inventor); Vandersande, Jan W. (Inventor)

    2000-01-01

    An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed.

  15. Boron-doped superlattices and Bragg mirrors in diamond

    SciTech Connect

    Fiori, A.; Bousquet, J.; Eon, D.; Omnès, F.; Bustarret, E.; Bellet-Amalric, E.

    2014-08-25

    A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

  16. Diamond and other forms of elemental carbon in Saturn’s deep atmosphere

    NASA Astrophysics Data System (ADS)

    Delitsky, M. L.; Baines, K. H.

    2013-10-01

    The energetic lightning storms in the Saturn atmosphere will dissociate molecules into atoms, ions and plasma. Specifically, methane will be dissociated into elemental carbon, most probably in an amorphous form, such as fluffy turbostratic carbon or irregular soot particles. Once formed, this non-crystalline carbon sinks down through the atmosphere reaching an altitude of similar density. Amorphous carbon is converted to graphite under pressure. Graphite has a density of ~2.2 g/cc at room temperature. The density of diamond is ~3.3 g/cc at STP. However, at much higher pressures, the density of diamond increases dramatically, up to 9 grams/cm3 at P=1500 GPa (15 Mbar). As carbon descends through the atmosphere, amorphous carbon becomes graphite which then is converted into diamond, creating various strata of carbon allotropes according to their densities. Densities of the planets increase with depth. Eventually, at great depths, diamond will melt, forming liquid diamond. The melting point of diamond varies with pressure, reaching a high of ~ 8000 K at 500 GPa (5 Mbar). Using updated adiabats and equation-of-state data from Nettelmann et al. (2011), we determined the altitude at which diamond reaches its melting point on each planet. Combining these adiabats with new data for the carbon phase diagram from high-pressure shockwave experiments indicates that diamond may be a stable layer in the atmospheres of Jupiter and Saturn. Previously, only Uranus and Neptune were thought to have conditions in their interiors that would allow the formation of diamond at their cores. It appears that the interior of Jupiter gets hot enough to reach the liquid diamond region of the carbon phase diagram, whereas the interior of Saturn includes regions of temperature and pressure where carbon could exist as solid diamond. At the boundaries (locations of sharp increases in density) on Jupiter and Saturn, there may be diamond rain or diamond oceans sitting as a layer. However, in Uranus

  17. Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1996-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6

  18. Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

    SciTech Connect

    Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A. |

    1996-12-31

    The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds.

  19. Structural investigation of the titanium/diamond film interface

    NASA Astrophysics Data System (ADS)

    Terranova, M. L.; Rossi, M.; Vitali, G.

    1996-09-01

    Reflection high-energy electron diffraction (RHEED) technique, with the possibility to shift, rotate, and tilt the sample with respect to the electron beam, has been used to investigate the structure of the transition layers formed at the interface between titanium substrate and diamond films. The diamond films were deposited on partially masked titanium sheets by means of the chemical vapor deposition technique, using CH4/H2 mixtures activated by hot filament. Deposition experiments have been performed at 650 and 730 °C. The RHEED analysis has been carried out in selected area conditions on the boundary between coated and uncoated regions; it enabled us to detect and characterise the inhomogeneous and complex structural configuration of the diamond/titanium interface. For the samples deposited at 650 °C we identified, starting from the titanium surface: a mixed phase constituted by titanium hydride and carbide precipitates, graphitic clusters embedded into a titanium hydride/carbide phase, TiC layers, and finally diamond films. At 730 °C both growth location and formation sequence of the various structures were found to be similar to those detected at 650 °C, resulting, however, in the complete absence of the Ti hydride phase. A first indication about the time scale of the process has been determined from structural investigations of deposits grown by runs lasting from 3 up to 20 min. A schematic model is presented which describes the growth sequence of the various species inside the intermediate reaction layers.

  20. Onion-like carbon from ultra-disperse diamond

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Vladimir L.; Chuvilin, Andrey L.; Butenko, Yuri V.; Mal'kov, Igor Yu.; Titov, Vladimir M.

    1994-05-01

    A new material containing macroscopic quantities of onion-like carbon (OLC) particles is produced by heat treatment of ultra-disperse diamond (UDD) powder (2-6 nm). Annealing products (characterized by high-resolution electron microscopy) are presented by; (a) quasi-spherical particles with closed concentric graphite shells, (b) polyhedron particles with closed shells, (c) elongated particles with linked external graphite-like layers and closed quasi-spherical internal shells. The intermediates of UDD transformation have been registered. The structural transformation of UDD begins from the surface of the diamond particles towards a crystal bulk. The transformation rate of (111) diamond planes to graphite-like sheets is higher than that of other planes.

  1. Properties of diamond grown from CO2 containing gas chemistries

    NASA Astrophysics Data System (ADS)

    Mollart, Tim P.; Lewis, Keith L.; Williams, G. M.

    1999-07-01

    The structural, optical and mechanical properties of CVD diamond grown using chemistries on the H-CO tie line have been investigated. A microwave plasma CVD system has been used with methane and ethylene containing gas chemistries to grow free standing optical quality diamond layers. When these feed stock gases are combined with carbon dioxide and hydrogen they enable the H-CO tie line to be traversed up to the central region of the Bachmann growth diagram. The structural properties were assessed using SEM, cathodoluminescence, Raman spectroscopy and x-ray diffraction techniques. The optical properties were assessed using several techniques including measurements of spectral emissivity over a range of temperatures and the role of nitrogen impurities identified. The trends in the optical characteristics will be discussed in relation to differences in mechanical properties with a view of evaluating the viability of using oxygen-based chemistries for the fabrication of diamond components.

  2. Fabrication of UV Photodetector on TiO2/Diamond Film.

    PubMed

    Liu, Zhangcheng; Li, Fengnan; Li, Shuoye; Hu, Chao; Wang, Wei; Wang, Fei; Lin, Fang; Wang, Hongxing

    2015-09-24

    The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO2/diamond film shows higher responsivity.

  3. Fabrication of UV Photodetector on TiO2/Diamond Film

    PubMed Central

    Liu, Zhangcheng; Li, Fengnan; Li, Shuoye; Hu, Chao; Wang, Wei; Wang, Fei; Lin, Fang; Wang, Hongxing

    2015-01-01

    The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was used as electrode material to fabricate metal-semiconductor-metal UV photodetector. The dark current is measured to be 1.12 pA at 30 V. The photo response of the device displays an obvious selectivity between UV and visible light, and the UV-to-visible rejection ratio can reach 2 orders of magnitude. Compared with that directly on diamond film, photodetector on TiO2/diamond film shows higher responsivity. PMID:26399514

  4. Electron energy loss spectrometry of interstellar diamonds

    NASA Technical Reports Server (NTRS)

    Bernatowicz, Thomas J.; Gibbons, Patrick C.; Lewis, Roy S.

    1990-01-01

    The results are reported of electron energy loss spectra (EELS) measurements on diamond residues from carbonaceous meteorites designed to elucidate the structure and composition of interstellar diamonds. Dynamic effective medium theory is used to model the dielectric properties of the diamonds and in particular to synthesize the observed spectra as mixtures of diamond and various pi-bonded carbons. The results are shown to be quantitatively consistent with the idea that diamonds and their surfaces are the only contributors to the electron energy loss spectra of the diamond residues and that these peculiar spectra are the result of the exceptionally small grain size and large specific surface area of the interstellar diamonds.

  5. The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

    SciTech Connect

    Grot, S.A.; Gildenblat, G.S.; Hatfield, C.W.; Wronski, C.R. . Dept. of Electrical Engineering); Badzian, A.R.; Badzian, T.; Messier, R. . Materials Research Lab.)

    1990-02-01

    Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) {ital I-V} characteristics of the Au/diamond contacts, regardless of the doping level. The proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400{degrees}C.

  6. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  7. Theoretical investigation of the electronic structure and quantum transport in the graphene-C(111) diamond surface system.

    PubMed

    Selli, Daniele; Baburin, Igor; Leoni, Stefano; Zhu, Zhen; Tománek, David; Seifert, Gotthard

    2013-10-30

    We investigate the interaction of a graphene monolayer with the C(111) diamond surface using ab initio density functional theory. To accommodate the lattice mismatch between graphene and diamond, the overlayer deforms into a wavy structure that binds strongly to the diamond substrate. The detached ridges of the wavy graphene overlayer behave electronically as free-standing polyacetylene chains with delocalized π electrons, separated by regions containing only sp(3) carbon atoms covalently bonded to the (111) diamond surface. We performed quantum transport calculations for different geometries of the system to study how the buckling of the graphene layer and the associated bonding to the diamond substrate affect the transport properties. The system displays high carrier mobility along the ridges and a wide transport gap in the direction normal to the ridges. These intriguing, strongly anisotropic transport properties qualify the hybrid graphene-diamond system as a viable candidate for electronic nanodevices.

  8. Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1994-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine

  9. CVD Diamond Dielectric Accelerating Structures

    SciTech Connect

    Schoessow, P.; Kanareykin, A.; Gat, R.

    2009-01-22

    The electrical and mechanical properties of diamond make it an ideal candidate material for use in dielectric accelerating structures: high RF breakdown field, extremely low dielectric losses and the highest available thermoconductive coefficient. Using chemical vapor deposition (CVD) cylindrical diamond structures have been manufactured with dimensions corresponding to fundamental TM{sub 01} mode frequencies in the GHz to THz range. Surface treatments are being developed to reduce the secondary electron emission (SEE) coefficient below unity to reduce the possibility of multipactor. The diamond CVD cylindrical waveguide technology developed here can be applied to a variety of other high frequency, large-signal applications.

  10. Tailoring nanocrystalline diamond film properties

    DOEpatents

    Gruen, Dieter M.; McCauley, Thomas G.; Zhou, Dan; Krauss, Alan R.

    2003-07-15

    A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

  11. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1994-01-01

    A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.

  12. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

    PubMed

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature. PMID:27545201

  13. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    NASA Astrophysics Data System (ADS)

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-08-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature.

  14. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

    NASA Astrophysics Data System (ADS)

    Sun, Huarui; Simon, Roland B.; Pomeroy, James W.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

    2015-03-01

    Integration of chemical vapor deposited polycrystalline diamond offers promising thermal performance for GaN-based high power radio frequency amplifiers. One limiting factor is the thermal barrier at the GaN to diamond interface, often referred to as the effective thermal boundary resistance (TBReff). Using a combination of transient thermoreflectance measurement, finite element modeling and microstructural analysis, the TBReff of GaN-on-diamond wafers is shown to be dominated by the SiNx interlayer for diamond growth seeding, with additional impacts from the diamond nucleation surface. By decreasing the SiNx layer thickness and minimizing the diamond nucleation region, TBReff can be significantly reduced, and a TBReff as low as 12 m2K/GW is demonstrated. This enables a major improvement in GaN-on-diamond transistor thermal resistance with respect to GaN-on-SiC wafers. A further reduction in TBReff towards the diffuse mismatch limit is also predicted, demonstrating the full potential of using diamond as the heat spreading substrate.

  15. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    PubMed Central

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. PMID:27545201

  16. Direct coating adherent diamond films on Fe-based alloy substrate: the roles of Al, Cr in enhancing interfacial adhesion and promoting diamond growth.

    PubMed

    Li, X J; He, L L; Li, Y S; Yang, Q; Hirose, A

    2013-08-14

    Direct CVD deposition of dense, continuous, and adherent diamond films on conventional Fe-based alloys has long been considered impossible. The current study demonstrates that such a deposition can be realized on Al, Cr-modified Fe-based alloy substrate (FeAl or FeCrAl). To clarify the fundamental mechanism of Al, Cr in promoting diamond growth and enhancing interfacial adhesion, fine structure and chemical analysis around the diamond film-substrate interface have been comprehensively characterized by transmission electron microscopy. An intermediate graphite layer forms on those Al-free substrates such as pure Fe and FeCr, which significantly deteriorates the interfacial adhesion of diamond. In contrast, such a graphite layer is absent on the FeAl and FeCrAl substrates, whereas a very thin Al-rich amorphous oxide sublayer is always identified between the diamond film and substrate interface. These comparative results indicate that the Al-rich interfacial oxide layer acts as an effective barrier to prevent the formation of graphite phase and consequently enhance diamond growth and adhesion. The adhesion of diamond film formed on FeCrAl is especially superior to that formed on FeAl substrate. This can be further attributed to a synergetic effect including the reduced fraction of Al and the decreased substrate thermal-expansion coefficient on FeCrAl in comparison with FeAl, and a mechanical interlocking effect due to the formation of interfacial chromium carbides. Accordingly, a mechanism model is proposed to account for the different interfacial adhesion of diamond grown on the various Fe-based substrates.

  17. REVIEW ARTICLE: Diamond for bio-sensor applications

    NASA Astrophysics Data System (ADS)

    Nebel, Christoph E.; Rezek, Bohuslav; Shin, Dongchan; Uetsuka, Hiroshi; Yang, Nianjun

    2007-10-01

    A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapour deposition (CVD) diamond films is given. The covalently bonded formation of amine- and phenyl-linker molecule layers is characterized using x-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine- and phenyl-layers are very different with respect to formation, growth, thickness and molecule arrangement. We detect a single-molecular layer of amine-linker molecules on diamond with a density of about 1014 cm-2 (10% of carbon bonds). Amine molecules are bonded only on initially H-terminated surface areas to carbon. In the case of electrochemical deposition of phenyl-layers, multi-layer formation is detected due to three-dimensional (3D) growths. This gives rise to the formation of typically 25 Å thick layers. The electrochemical grafting of boron-doped diamond works on H-terminated and oxidized surfaces. After reacting such films with hetero-bifunctional crosslinker molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities of up to 1013 cm-2. The DNA is tilted by an angle of about 35° with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10 min causes a decrease of DNA density to about 1012 cm-2. Application of AFM scratching experiments shows threshold removal forces of around 75 nN for DNA bonded on phenyl-linker molecules and of about 45 nN for DNA bonded to amine-linker molecules. DNA sensor applications using Fe(CN6)3-/4- mediator redox molecules, impedance spectroscopy and DNA-field effect transistor devices performances are introduced and discussed.

  18. Investigation of nucleation and growth processes of diamond films by atomic force microscopy

    NASA Technical Reports Server (NTRS)

    George, M. A.; Burger, A.; Collins, Warren E.; Hu, Z.

    1995-01-01

    The nucleation and growth of plasma enhanced chemical vapor deposited (PECVD) polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for: (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the films cross-section and interface however were not affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscoy (XPS) spectra indicates that some silicon carbide is present in the precursor layer.

  19. Investigation of nucleation and growth processes of diamond films by atomic force microscopy

    NASA Technical Reports Server (NTRS)

    George, M. A.; Burger, A.; Collins, W. E.; Davidson, J. L.; Barnes, A. V.; Tolk, N. H.

    1994-01-01

    The nucleation and growth of plasma-enhanced chemical-vapor deposited polycrystalline diamond films were studied using atomic force microscopy (AFM). AFM images were obtained for (1) nucleated diamond films produced from depositions that were terminated during the initial stages of growth, (2) the silicon substrate-diamond film interface side of diamond films (1-4 micrometers thick) removed from the original surface of the substrate, and (3) the cross-sectional fracture surface of the film, including the Si/diamond interface. Pronounced tip effects were observed for early-stage diamond nucleation attributed to tip convolution in the AFM images. AFM images of the film's cross section and interface, however, were not highly affected by tip convolution, and the images indicate that the surface of the silicon substrate is initially covered by a small grained polycrystalline-like film and the formation of this precursor film is followed by nucleation of the diamond film on top of this layer. X-ray photoelectron spectroscopy spectra indicate that some silicon carbide is present in the precursor layer.

  20. "Compressed graphite" formed during C60 to diamond transformation as revealed by scattering computed tomography.

    PubMed

    Álvarez-Murga, M; Bleuet, P; Garbarino, G; Salamat, A; Mezouar, M; Hodeau, J L

    2012-07-13

    The collapsing of C60 into polycrystalline diamond has been studied after nonhydrostatic pressurization at ambient temperature using x-ray scattering computed tomography. Using this selective structural probe we provide evidence of concentric coexistence of "compressed graphite" (d(00l)∼3.09-3.11  Å), sp2-graphitelike phase (d(00l)∼3.35-3.42  Å), and sp3-like amorphous carbon surrounding polycrystalline diamond (a∼3.56-3.59  Å). The so-called "compressed graphite" exhibits a collapsed c axis and is textured with disordered layers. This latter phase is better described as a short interlayered carbon phase with buckled sp2-sp3 layers with possible interlayer bonding. Additionally, our 3D maps of phase distribution and of the residual stress retained in the polycrystalline diamond phase support the importance of stressed synthesis conditions for diamond formation.

  1. Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

    SciTech Connect

    Galář, P. Malý, P.; Čermák, J.; Kromka, A.; Rezek, B.

    2014-12-14

    Hybrid diamond-organic interfaces are considered attractive for diverse applications ranging from electronics and energy conversion to medicine. Here we use time-resolved and time-integrated photoluminescence spectroscopy in visible spectral range (380–700 nm) to study electronic processes in H-terminated nanocrystalline diamond films (NCD) with 150 nm thin, electrochemically deposited polypyrrole (PPy) layer. We observe changes in dynamics of NCD photoluminescence as well as in its time-integrated spectra after polymer deposition. The effect is reversible. We propose a model where the PPy layer on the NCD surface promotes spatial separation of photo-generated charge carriers both in non-diamond carbon phase and in bulk diamond. By comparing different NCD thicknesses we show that the effect goes as much as 200 nm deep inside the NCD film.

  2. Diamond single crystal-surface modification under high- fluence ion irradiation

    NASA Astrophysics Data System (ADS)

    Anikin, V. A.; Borisov, A. M.; Kazakov, V. A.; Mashkova, E. S.; Palyanov, Yu N.; Popov, V. P.; Shmytkova, E. A.; Sigalaev, S. K.

    2016-09-01

    The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400 oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.

  3. Method of dehalogenation using diamonds

    DOEpatents

    Farcasiu, Malvina; Kaufman, Phillip B.; Ladner, Edward P.; Anderson, Richard R.

    2000-01-01

    A method for preparing olefins and halogenated olefins is provided comprising contacting halogenated compounds with diamonds for a sufficient time and at a sufficient temperature to convert the halogenated compounds to olefins and halogenated olefins via elimination reactions.

  4. Diamond family of nanoparticle superlattices.

    PubMed

    Liu, Wenyan; Tagawa, Miho; Xin, Huolin L; Wang, Tong; Emamy, Hamed; Li, Huilin; Yager, Kevin G; Starr, Francis W; Tkachenko, Alexei V; Gang, Oleg

    2016-02-01

    Diamond lattices formed by atomic or colloidal elements exhibit remarkable functional properties. However, building such structures via self-assembly has proven to be challenging because of the low packing fraction, sensitivity to bond orientation, and local heterogeneity. We report a strategy for creating a diamond superlattice of nano-objects via self-assembly and demonstrate its experimental realization by assembling two variant diamond lattices, one with and one without atomic analogs. Our approach relies on the association between anisotropic particles with well-defined tetravalent binding topology and isotropic particles. The constrained packing of triangular binding footprints of truncated tetrahedra on a sphere defines a unique three-dimensional lattice. Hence, the diamond self-assembly problem is solved via its mapping onto two-dimensional triangular packing on the surface of isotropic spherical particles. PMID:26912698

  5. Diamond family of nanoparticle superlattices.

    PubMed

    Liu, Wenyan; Tagawa, Miho; Xin, Huolin L; Wang, Tong; Emamy, Hamed; Li, Huilin; Yager, Kevin G; Starr, Francis W; Tkachenko, Alexei V; Gang, Oleg

    2016-02-01

    Diamond lattices formed by atomic or colloidal elements exhibit remarkable functional properties. However, building such structures via self-assembly has proven to be challenging because of the low packing fraction, sensitivity to bond orientation, and local heterogeneity. We report a strategy for creating a diamond superlattice of nano-objects via self-assembly and demonstrate its experimental realization by assembling two variant diamond lattices, one with and one without atomic analogs. Our approach relies on the association between anisotropic particles with well-defined tetravalent binding topology and isotropic particles. The constrained packing of triangular binding footprints of truncated tetrahedra on a sphere defines a unique three-dimensional lattice. Hence, the diamond self-assembly problem is solved via its mapping onto two-dimensional triangular packing on the surface of isotropic spherical particles.

  6. Method of Dehalogenation using Diamonds

    SciTech Connect

    Farcasiu, Malvina; Kaufman, Phillip B.; Ladner, Edward P.; Anderson, Richard R.

    1999-02-26

    A method for preparing olefins and halogenated olefins is provided comprising contacting halogenated compounds with diamonds for a sufficient time and at a sufficient temperature to convert the halogenated compounds to olefins and halogenated olefins via elimination reactions.

  7. Fabrication of amorphous diamond films

    DOEpatents

    Falabella, S.

    1995-12-12

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  8. Biocompatibility of chemical-vapour-deposited diamond.

    PubMed

    Tang, L; Tsai, C; Gerberich, W W; Kruckeberg, L; Kania, D R

    1995-04-01

    The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS. Second, both in vitro and in vivo there appears to be less cellular adhesion and activation on the surface of CVD diamond surfaces compared to Ti and SS. This evident biocompatibility, coupled with the corrosion resistance and notable mechanical integrity of CVD diamond, suggests that diamond-coated surfaces may be highly desirable in a number of biomedical applications. PMID:7654876

  9. A procedure for diamond turning KDP crystals

    SciTech Connect

    Montesanti, R.C.; Thompson, S.L.

    1995-07-07

    A procedure and the equipment necessary for single-point diamond flycutting (loosely referred to as diamond turning) potassium di-hydrogen phosphate (KDP) crystals are described. It is based on current KDP diamond turning activities at the Lawrence Livermore National Laboratory (LLNL), drawing upon knowledge from the Nova crystal finishing development during the 1980`s and incorporating refinements from our efforts during 1995. In addition to describing a step-by-step process for diamond turning KDP, specific discussions are included on the necessary diamond tool geometry and edge sharpness, cutting fluid, and crystal preparation, handling, cleaning, and inspection. The authors presuppose that the reader is already familiar with diamond turning practices.

  10. Wear mechanism of diamond coated cutting tools

    SciTech Connect

    Leyendecker, T.; Lemmer, O.; Esser, S.

    1995-12-31

    Since Diamond Coatings were introduced into the market in 1989, five years experience in industrial applications of diamond coated cutting tools enables to present an overview of tool life and wear behavior of diamond coated cutting tools due to different cutting conditions and workpiece-materials. Machining reinforced plastics, presintered ceramic compacts, aluminum alloys, metal-matrix composites and graphite, different wear behavior occurs at the cutting edges of diamond coated tools. Having a good adhesion fatigue and chemical wear of Diamond coatings determines life time of the tools. By a profound pretreatment procedure CVD Diamond coated tools can compete with conventional PCD-tools.

  11. Diamond crystallization in a CO2-rich alkaline carbonate melt with a nitrogen additive

    NASA Astrophysics Data System (ADS)

    Khokhryakov, Alexander F.; Palyanov, Yuri N.; Kupriyanov, Igor N.; Nechaev, Denis V.

    2016-09-01

    Diamond crystallization was experimentally studied in a CO2-bearing alkaline carbonate melt with an increased content of nitrogen at pressure of 6.3 GPa and temperature of 1500 °C. The growth rate, morphology, internal structure of overgrown layers, and defect-impurity composition of newly formed diamond were investigated. The type of growth patterns on faces, internal structure, and nitrogen content were found to be controlled by both the crystallographic orientation of the growth surfaces and the structure of the original faces of diamond seed crystals. An overgrown layer has a uniform structure on the {100} plane faces of synthetic diamond and a fibrillar (fibrous) structure on the faceted surfaces of a natural diamond cube. The {111} faces have a polycentric vicinal relief with numerous twin intergrowths and micro twin lamellae. The stable form of diamond growth under experimental conditions is a curved-face hexoctahedron with small cube faces. The nitrogen impurity concentration in overgrown layers varies depending on the growth direction and surface type, from 100 to 1100 ppm.

  12. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers.

    PubMed

    Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A; Schreiner, Peter R; Shen, Zhi-Xun; Melosh, Nicholas A; Vučković, Jelena

    2016-01-13

    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing. PMID:26695059

  13. Diamonds: Exploration, mines and marketing

    NASA Astrophysics Data System (ADS)

    Read, George H.; Janse, A. J. A. (Bram)

    2009-11-01

    The beauty, value and mystique of exceptional quality diamonds such as the 603 carat Lesotho Promise, recovered from the Letseng Mine in 2006, help to drive a multi-billion dollar diamond exploration, mining and marketing industry that operates in some 45 countries across the globe. Five countries, Botswana, Russia, Canada, South Africa and Angola account for 83% by value and 65% by weight of annual diamond production, which is mainly produced by four major companies, De Beers, Alrosa, Rio Tinto and BHP Billiton (BHPB), which together account for 78% by value and 72% by weight of annual diamond production for 2007. During the last twelve years 16 new diamond mines commenced production and 4 re-opened. In addition, 11 projects are in advanced evaluation and may begin operations within the next five years. Exploration for diamondiferous kimberlites was still energetic up to the last quarter of 2008 with most work carried out in Canada, Angola, Democratic Republic of the Congo (DRC) and Botswana. Many kimberlites were discovered but no new economic deposits were outlined as a result of this work, except for the discovery and possible development of the Bunder project by Rio Tinto in India. Exploration methods have benefitted greatly from improved techniques of high resolution geophysical aerial surveying, new research into the geochemistry of indicator minerals and further insights into the formation of diamonds and the relation to tectonic/structural events in the crust and mantle. Recent trends in diamond marketing indicate that prices for rough diamonds and polished goods were still rising up to the last quarter of 2008 and subsequently abruptly sank in line with the worldwide financial crisis. Most analysts predict that prices will rise again in the long term as the gap between supply and demand will widen because no new economic diamond discoveries have been made recently. The disparity between high rough and polished prices and low share prices of publicly

  14. Surface Design and Engineering Toward Wear-Resistant, Self-Lubricating Diamond Films and Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    The tribological properties of chemical-vapor-deposited (CVD) diamond films vary with the environment, possessing a Jekyll-and-Hyde character. CVD diamond has low coefficient of friction and high wear resistance in air but high coefficient of friction and low wear resistance in vacuum. Improving the tribological functionality of materials (such as achieving low friction and good wear resistance) was an aim of this investigation. Three studies on the surface design, surface engineering, and tribology of CVD diamond have shown that its friction and wear are significantly reduced in ultrahigh vacuum. The main criteria for judging whether diamond films are an effective wear-resistant, self-lubricating material were coefficient of friction and wear rate, which must be less than 0.1 and on the order of 10(exp 6) cu mm/N(dot)m, respectively. In the first study the presence of a thin film (less than 1 micron thick) of amorphous, nondiamond carbon (hydrogenated carbon, also called diamondlike carbon or DLC) on CVD diamond greatly decreased the coefficient of friction and the wear rate. Therefore, a thin DLC film on CVD diamond can be an effective wear-resistant, lubricating coating in ultrahigh vacuum. In the second study the presence of an amorphous, nondiamond carbon surface layer formed on CVD diamond by ion implantation significantly reduced the coefficient of friction and the wear rate in ultrahigh vacuum. Therefore, such surface layers are acceptable for effective self-lubricating, wear-resistant applications of CVD diamond. In the third study CVD diamond in contact with cubic boron nitride exhibited low coefficient of friction in ultra high vacuum. Therefore, this materials combination can provide an effective self-lubricating, wear-resistant couple in ultrahigh vacuum.

  15. Ion Microscopy on Diamond

    NASA Astrophysics Data System (ADS)

    Manfredotti, Claudio

    Because of its physical properties (strong radiation hardness, wide energy gap with a consequent extremely low dark current, very large electron and hole mobility) diamond is a very good candidate for nuclear particle detection, particularly in harsh environments or in conditions of strong radiation damage. Being commonly polycrystalline, diamond samples obtained by chemical vapour deposition (CVD) are not homogeneous, not only from the morphological point of view, but also from the electronic one. As a consequence, as it was indicated quite early starting from 1995, charge collection properties such as charge collection efficiency (cce) are not uniform, but they are depending on the site hit by incoming particle. Moreover, these properties are influenced by previous irradiations which are used in order to improve them and, finally, they are also dependent on the thickness of the sample, since the electronic non uniformity extends also in depth by affecting the profile of the electrical field from top to bottom electrode of the nuclear detector in the standard "sandwich" arrangement. By the use of focussed ion beams, it is possible to investigate these non uniformities by the aid of techniques like IBIC (Ion Beam Induced Charge) and IBIL (Ion Beam Induced Luminescence) with a space resolution of the order of 1 m. This relatively new kind of microscopy, which is called "ion microscopy", is capable not only to give 2D maps of cce, which can be quite precisely compared with morphological images obtained by Scanning Electron Microscopy (generally the grains display a much better cce than intergrain regions), but also to give the electric field profile from one electrode to the other one in a "lateral" arrangement of the ion beam. IBIL, by supplying 2D maps of luminescence intensity at different wavelength, can give information about the presence of specific radiative recombination centers and their distribution in the material. Finally, a new technique called XBIC (X

  16. All-Diamond Microelectrodes as Solid State Probes for Localized Electrochemical Sensing.

    PubMed

    Silva, Eduardo L; Gouvêa, Cristol P; Quevedo, Marcela C; Neto, Miguel A; Archanjo, Braulio S; Fernandes, António J S; Achete, Carlos A; Silva, Rui F; Zheludkevich, Mikhail L; Oliveira, Filipe J

    2015-07-01

    The fabrication of an all-diamond microprobe is demonstrated for the first time. This ME (microelectrode) assembly consists of an inner boron doped diamond (BDD) layer and an outer undoped diamond layer. Both layers were grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner within a single deposition run. BDD is a material with proven potential as an electrochemical sensor. Undoped CVD diamond is an insulating material with superior chemical stability in comparison to conventional insulators. Focused ion beam (FIB) cutting of the apex of the ME was used to expose an electroactive BDD disk. By cyclic voltammetry, the redox reaction of ferrocenemethanol was shown to take place at the BDD microdisk surface. In order to ensure that the outer layer was nonelectrically conductive, a diffusion barrier for boron atoms was established seeking the formation of boron-hydrogen complexes at the interface between the doped and the undoped diamond layers. The applicability of the microelectrodes in localized corrosion was demonstrated by scanning amperometric measurements of oxygen distribution above an Al-Cu-CFRP (Carbon Fiber Reinforced Polymer) galvanic corrosion cell.

  17. Stiff diamond/buckypaper carbon hybrids.

    PubMed

    Holz, T; Mata, D; Santos, N F; Bdikin, I; Fernandes, A J S; Costa, F M

    2014-12-24

    Given the specific properties of each carbon allotrope such as high electrical/thermal conductivity of multiwall carbon nanotubes (MWCNT) and extreme hardness and high inertness of nanocrystalline diamond (NCD), the integration of both carbon phases is highly desirable. Therefore, in the present work, buckypapers were produced from MWCNT suspensions and were used as free-standing substrates to be coated with NCD by microwave plasma chemical vapor deposition (MPCVD). The integration of both allotropes was successfully achieved, the CNTs being preserved after diamond growth as confirmed by μ-Raman spectroscopy and scanning electron microscopy (SEM). Additionally, a good linkage was observed, the CNTs remaining embedded within the NCD matrix, thus reinforcing the interface of the resulting hybrid structure. This was corroborated by bending tests in a modified nanohardness tester. The increase of the Young's modulus from 0.3 to 300 GPa after NCD growth enables the use of this material in a wide range of applications including microelectromechanical systems (MEMS). Additionally, a highly anisotropic electrical resistivity behavior was confirmed: low in-plane values were found for the CNT layer (1.39 × 10(-2) Ω.cm), while high transverse ones were measured for both the NCD coated and uncoated CNT buckypapers (8.13 × 10(5) and 6.18 × 10(2) Ω.cm, respectively). PMID:25412196

  18. Origins of Majoritic Inclusions in Diamond

    NASA Astrophysics Data System (ADS)

    Kiseeva, K.; Wood, B. J.; Ghosh, S. K.; Stachel, T.

    2015-12-01

    Mineral inclusions in diamonds are the only available samples from the transition zone and the lower mantle. The dominant type of inclusions for the range of transition zone (410-660 km) pressures is majoritic garnet, a high-pressure Si-rich tetragonal garnet which crystallises when pyroxene breaks down and dissolves in the garnet structure. Two majoritic garnet endmembers: Na2MgSi5O12 and Mg4Si4O12 can be distinguished for eclogitic and peridotitic parageneses, respectively. In our recent study [1] we used these idealised substitutions to show that the majority of majoritic garnets reported in the literature belong to neither eclogitic nor peridotitic lithologies and rather crystallised from a wide range of intermediate compositions, referred to as pyroxenites [1]. Here we elaborate on the origin and composition of the pyroxenite lithology. According to Si geobarometry most majoritic garnet inclusions formed at mantle transition zone pressures, predominantly within the stability field of clinopyroxene + garnet. Using experimental partition coefficients for Na, Al, Mg and Fe between garnet and clinopyroxene, we have calculated the compositions of clinopyroxene in equilibrium with majoritic garnet, which allows us to estimate the locus of possible bulk rock compositions. These lie in the field of upper mantle pyroxenites as defined by Hirschmann and Stolper [2]. We also find that occasional clinopyroxene inclusions in diamond actually coexisting with majoritic garnet inclusions are all close in composition to those predicted by our study. Additionally, we show experimentally that the pyroxenite-diamond association is probably a consequence of the interaction between basaltic and peridotitic compositions in the presence of carbonate melt and that layering of pyroxenites is a natural consequence of this interaction. Reduction of carbonate to carbon at high pressures is responsible for the genetic connection between pyroxenite and diamond and the abundance of

  19. Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics

    SciTech Connect

    Vikharev, A. L. Gorbachev, A. M.; Dukhnovsky, M. P.; Muchnikov, A. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2012-02-15

    The fabrication of diamond substrates in which single-crystalline and polycrystalline CVD diamond form a single wafer, and the epitaxial growth of diamond films on such combined substrates containing polycrystalline and (100) single-crystalline CVD diamond regions are studied.

  20. Are diamond nanoparticles cytotoxic?

    PubMed

    Schrand, Amanda M; Huang, Houjin; Carlson, Cataleya; Schlager, John J; Omacr Sawa, Eiji; Hussain, Saber M; Dai, Liming

    2007-01-11

    Finely divided carbon particles, including charcoal, lampblack, and diamond particles, have been used for ornamental and official tattoos since ancient times. With the recent development in nanoscience and nanotechnology, carbon-based nanomaterials (e.g., fullerenes, nanotubes, nanodiamonds) attract a great deal of interest. Owing to their low chemical reactivity and unique physical properties, nanodiamonds could be useful in a variety of biological applications such as carriers for drugs, genes, or proteins; novel imaging techniques; coatings for implantable materials; and biosensors and biomedical nanorobots. Therefore, it is essential to ascertain the possible hazards of nanodiamonds to humans and other biological systems. We have, for the first time, assessed the cytotoxicity of nanodiamonds ranging in size from 2 to 10 nm. Assays of cell viability such as mitochondrial function (MTT) and luminescent ATP production showed that nanodiamonds were not toxic to a variety of cell types. Furthermore, nanodiamonds did not produce significant reactive oxygen species. Cells can grow on nanodiamond-coated substrates without morphological changes compared to controls. These results suggest that nanodiamonds could be ideal for many biological applications in a diverse range of cell types.

  1. Are diamond nanoparticles cytotoxic?

    PubMed

    Schrand, Amanda M; Huang, Houjin; Carlson, Cataleya; Schlager, John J; Omacr Sawa, Eiji; Hussain, Saber M; Dai, Liming

    2007-01-11

    Finely divided carbon particles, including charcoal, lampblack, and diamond particles, have been used for ornamental and official tattoos since ancient times. With the recent development in nanoscience and nanotechnology, carbon-based nanomaterials (e.g., fullerenes, nanotubes, nanodiamonds) attract a great deal of interest. Owing to their low chemical reactivity and unique physical properties, nanodiamonds could be useful in a variety of biological applications such as carriers for drugs, genes, or proteins; novel imaging techniques; coatings for implantable materials; and biosensors and biomedical nanorobots. Therefore, it is essential to ascertain the possible hazards of nanodiamonds to humans and other biological systems. We have, for the first time, assessed the cytotoxicity of nanodiamonds ranging in size from 2 to 10 nm. Assays of cell viability such as mitochondrial function (MTT) and luminescent ATP production showed that nanodiamonds were not toxic to a variety of cell types. Furthermore, nanodiamonds did not produce significant reactive oxygen species. Cells can grow on nanodiamond-coated substrates without morphological changes compared to controls. These results suggest that nanodiamonds could be ideal for many biological applications in a diverse range of cell types. PMID:17201422

  2. Ultimate Atomic Bling: Nanotechnology of Diamonds

    SciTech Connect

    Dahl, Jeremy

    2010-05-25

    Diamonds exist in all sizes, from the Hope Diamond to minuscule crystals only a few atoms across. The smallest of these diamonds are created naturally by the same processes that make petroleum. Recently, researchers discovered that these 'diamondoids' are formed in many different structural shapes, and that these shapes can be used like LEGO blocks for nanotechnology. This talk will discuss the discovery of these nano-size diamonds and highlight current SLAC/Stanford research into their applications in electronics and medicine.

  3. Nanocrystalline diamond synthesized from C60

    SciTech Connect

    Dubrovinskaia, N.; Dubrovinsky, L.; Langehorst, F.; Jacobsen, S.; Liebske, C.

    2010-11-30

    A bulk sample of nanocrystalline cubic diamond with crystallite sizes of 5-12 nm was synthesized from fullerene C{sub 60} at 20(1) GPa and 2000 C using a multi-anvil apparatus. The new material is at least as hard as single crystal diamond. It was found that nanocrystalline diamond at high temperature and ambient pressure kinetically is more stable with respect to graphitization than usual diamonds.

  4. Genesis of Diamond-bearing and Diamond-free Podiform Chromitites in the Luobusa Ophiolite, Tibet

    NASA Astrophysics Data System (ADS)

    Yang, J.; Xiong, F.; Xu, X.; Robinson, P. T.; Dilek, Y.; Griffin, W. L.

    2014-12-01

    Micro-diamonds, moissanite and many highly reduced minerals, such as native Fe, Cr, Ni, Si, Al, and metallic alloys, have been reported previously from podiform chromitites and peridotites of the Luobusa ophiolite in the eastern segment of the Yarlung-Zangbo suture of southern Tibet.. Similar mineral associations have now been confirmed in mantle peridotites or chromitites of 11 other ophiolites in 5 orogenic belts, in Tibet, Myanmar, North China and the Polar Urals. However, detailed studies of the Luobusa ophiolite show that not all chromitites contain these UHP and highly reduced minerals. Diamond-bearing chromitites are chiefly massive bodies composed of over 95 modal% magnesiochromite with Cr#s [100Cr/(Cr+Al)] of 77-83 and Mg#s [100Mg/(Mg+Fe)] of 71-82. Most of these bodies have sharp contacts with the host harzburgites and are only rarely enclosed in dunite envelopes. Many magnesiochromite grains in the massive chromitites contain inclusions of forsterite and pyroxene. Forsterite inclusions have Fo numbers of 97-99 and NiO contents of 1.11-1.29 wt%. Mg#s of clinopyroxene inclusions are 96-98 and those of orthopyroxene are 96-97. X-ray studies show that the olivine inclusions have very small unit cells and short cation-oxygen bond distances, suggesting crystallization at high pressure. In contrast, diamond-free chromitites typically occur as layers within thick dunite sequences or as irregular patches surrounded by dunite envelopes. They consist of variable proportions of magnesiochromite (Cr# = 76-78; Mg# = 58-61) and olivine, and have banded, nodular and disseminated textures. The dunite envelopes consist chiefly of granular olivine with a few relatively large, amoeboidal grains of magnesiochromite, and typically grade into the host peridotites with increasing pyroxene. Unlike those in the massive ores, magnesiochromite grains in nodular and disseminated chromitites lack pyroxene inclusions, and their olivine inclusions have relatively low Fo (94-96) and Ni

  5. Diamond and diamond-like films for transportation applications

    SciTech Connect

    Perez, J.M.

    1993-01-01

    This section is a compilation of transparency templates which describe the goals of the Office of Transportation Materials (OTM) Tribology Program. The positions of personnel on the OTM are listed. The role and mission of the OTM is reviewed. The purpose of the Tribology Program is stated to be `to obtain industry input on program(s) in tribology/advanced lubricants areas of interest`. The objective addressed here is to identify opportunities for cost effective application of diamond and diamond-like carbon in transportation systems.

  6. Diamond Drilling Specification Manual and Course Outline.

    ERIC Educational Resources Information Center

    British Columbia Dept. of Education, Victoria.

    This publication presents the standards required of a person practicing diamond drilling in western Canada and provides an outline for teaching the skills and knowledge. It is divided into two parts. The Diamond Drilling Specification Manual establishes the levels of skill and knowledge required in the four certified levels of diamond drilling.…

  7. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 2 2013-10-01 2013-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  8. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 2 2010-10-01 2010-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  9. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 2 2012-10-01 2012-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  10. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 2 2011-10-01 2011-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  11. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 2 2014-10-01 2014-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  12. Diamond device architectures for UV laser monitoring

    NASA Astrophysics Data System (ADS)

    Salvatori, S.; Girolami, M.; Oliva, P.; Conte, G.; Bolshakov, A.; Ralchenko, V.; Konov, V.

    2016-08-01

    The paper reviews the status of diamond detectors for UV laser monitoring and imaging. Single pixel detectors, position sensitive architectures, optically activated switches and sensor arrays for beam positioning and imaging are analyzed. The performances of natural diamond and synthetic diamond produced by chemical vapor deposition are compared to evaluate the suitability of such an outstanding material for the described applications.

  13. Ultratough single crystal boron-doped diamond

    SciTech Connect

    Hemley, Russell J; Mao, Ho-Kwang; Yan, Chih-Shiue; Liang, Qi

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  14. Diamond photodiodes for x-ray application

    SciTech Connect

    Distel, James R; Smedley, John; Keister, Jeffrey W; Muller, Erik; Jordan - Sweet, Jean; Bohon, Jen; Dong, Bin

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  15. Electron microscopic evidence for a tribologically induced phase transformation as the origin of wear in diamond

    SciTech Connect

    Zhang, Xinyi; Schneider, Reinhard; Müller, Erich; Gerthsen, Dagmar; Mee, Manuel; Meier, Sven; Gumbsch, Peter

    2014-02-14

    Tribological testing of a coarse-grained diamond layer, deposited by plasma-enhanced chemical vapor deposition, was performed on a ring-on-ring tribometer with a diamond counterpart. The origin of the wear of diamond and of the low friction coefficient of 0.15 was studied by analyzing the microstructure of worn and unworn regions by transmission and scanning electron microscopy. In the worn regions, the formation of an amorphous carbon layer with a thickness below 100 nm is observed. Electron energy loss spectroscopy of the C-K ionization edge reveals the transition from sp{sup 3}-hybridized C-atoms in crystalline diamond to a high fraction of sp{sup 2}-hybridized C-atoms in the tribo-induced amorphous C-layer within a transition region of less than 5 nm thickness. The mechanically induced phase transformation from diamond to the amorphous phase is found to be highly anisotropic which is clearly seen at a grain boundary, where the thickness of the amorphous layer above the two differently oriented grains abruptly changes.

  16. Deep ultraviolet diamond Raman laser.

    PubMed

    Granados, Eduardo; Spence, David J; Mildren, Richard P

    2011-05-23

    We present a synchronously pumped diamond Raman laser operating at 275.7 nm pumped by the 4th harmonic of a mode locked Nd:YVO4 laser. The laser had a threshold pump pulse energy of 5.8 nJ and generated up to 0.96 nJ pulses at 10.3% conversion efficiency. The results agree well with a numerical model that includes two-photon absorption of the pump and Stokes beams and uses a Raman gain coefficient of diamond of 100 cm/GW. We also report on the observation of nanometer scale two-photon assisted etching of the diamond crystal surfaces. PMID:21643343

  17. Diamond-silicon carbide composite

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  18. Fabrication and characterization of an all-diamond tubular flow microelectrode for electroanalysis.

    PubMed

    Hutton, Laura A; Vidotti, Marcio; Iacobini, James G; Kelly, Chris; Newton, Mark E; Unwin, Patrick R; Macpherson, Julie V

    2011-07-15

    The development of the first all-diamond hydrodynamic flow device for electroanalytical applications is described. Here alternate layers of intrinsic (insulating), conducting (heavily boron doped), and intrinsic polycrystalline diamond are grown to create a sandwich structure. By laser cutting a hole through the material, it is possible to produce a tubular flow ring electrode of a characteristic length defined by the thickness of the conducting layer (for these studies ∼90 μm). The inside of the tube can be polished to 17 ± 10 nm surface roughness using a diamond impregnanted wire resulting in a coplanar, smooth, all-diamond surface. The steady-state limiting current versus volume flow rate characteristics for the one electron oxidation of FcTMA(+) are in agreement with those expected for laminar flow in a tubular electrode geometry. For dopamine detection, it is shown that the combination of the reduced fouling properties of boron doped diamond, coupled with the flow geometry design where the products of electrolysis are washed away downstream of the electrode, completely eradicates fouling during electrolysis. This paves the way for incorporation of this flow design into online electroanalytical detection systems. Finally, the all diamond tubular flow electrode system described here provides a platform for future developments including the development of ultrathin ring electrodes, multiple apertures for increased current response, and multiple, individually addressable ring electrodes incorporated into the same flow tube.

  19. Superconductivity in CVD Diamond Films

    NASA Astrophysics Data System (ADS)

    Takano, Yoshihiko

    2005-03-01

    The recent news of superconductivity 2.3K in heavily boron-doped diamond synthesized by high pressure sintering was received with considerable surprise (1). Opening up new possibilities for diamond-based electrical devices, a systematic investigation of these phenomena clearly needs to be achieved. Application of diamond to actual devices requires it to be made into the form of wafers or thin films. We show unambiguous evidence for superconductivity in a heavily boron-doped diamond thin film deposited by the microwave plasma assisted chemical vapor deposition (MPCVD) method (2). An advantage of the MPCVD deposited diamond is that it can control boron concentration in its wider range, particularly in (111) oriented films. The temperature dependence of resistivity for (111) and (100) homoepitaxial thin films were measured under several magnetic fields. Superconducting transition temperatures of (111) homoepitaxial film are determined to be 11.4K for Tc onset and 7.2K for zero resistivity. And the upper critical field is estimated to be about 8T. These values are 2-3 times higher than these ever reported (1,3). On other hand, for (100) homoepitaxial film, Tc onset and Tc zero resistivity were estimated to be 6.3 and 3.2K respectively. The superconductivity in (100) film was strongly suppressed even at the same boron concentration. These differences of superconductivity in film orientation will be discussed. These findings established the superconductivity as a universal property of boron-doped diamond, demonstrating that device application is indeed a feasible challenge. 1. E. A. Ekimov et al. Nature, 428, 542 (2004). 2. Y. Takano et al., Appl. Phys. Lett. 85, 2851 (2004). 3. E. Bustarret et al., ond-mat 0408517.

  20. Impact of nucleation density on thermal resistance near diamond-substrate boundaries

    SciTech Connect

    Touzelbaev, M.N.; Goodson, K.E.

    1996-12-31

    Existing theory cannot account for the experimentally-observed thermal boundary resistance between deposited layers and substrates at room temperature. This is due to microstructural disorder in the deposited film within tens of nanometers of the interface. This work develops a model for the resulting thermal resistance near diamond-substrate interfaces, where the best deposition processes continue to yield high concentrations of amorphous inclusions and nanocrystalline material. The model relies on phonon transport theory and a novel subdivision of the near-interfacial region, which shows that the resistance is governed by the number of diamond nucleation sites per unit substrate area, i.e. The nucleation density. The predictions are consistent with experimental data for diamond-silicon interfaces and indicate that the resistance reaches a minimum for a nucleation density near 10{sup 10} cm{sup {minus}2}. This work facilitates the development microstructures that benefit more strongly from the excellent thermal-conduction properties of diamond.

  1. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

    PubMed Central

    Berman, Diana; Deshmukh, Sanket A.; Narayanan, Badri; Sankaranarayanan, Subramanian K. R. S.; Yan, Zhong; Balandin, Alexander A.; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V.

    2016-01-01

    The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics. PMID:27373740

  2. Diamond Composite Films for Protective Coatings on Metals and Method of Formation

    NASA Technical Reports Server (NTRS)

    Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

    1997-01-01

    Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

  3. High resolution core level spectroscopy of hydrogen-terminated (1 0 0) diamond

    NASA Astrophysics Data System (ADS)

    Schenk, A. K.; Rietwyk, K. J.; Tadich, A.; Stacey, A.; Ley, L.; Pakes, C. I.

    2016-08-01

    Synchrotron-based photoelectron spectroscopy experiments are presented that address a long standing inconsistency in the treatment of the C1s core level of hydrogen terminated (1 0 0) diamond. Through a comparison of surface and bulk sensitive measurements we show that there is a surface related core level component to lower binding energy of the bulk diamond component; this component has a chemical shift of -0.16+/- 0.05 eV which has been attributed to carbon atoms which are part of the hydrogen termination. Additionally, our results indicate that the asymmetry of the hydrogen terminated (1 0 0) diamond C1s core level is an intrinsic aspect of the bulk diamond peak which we have attributed to sub-surface carbon layers.

  4. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale.

    PubMed

    Berman, Diana; Deshmukh, Sanket A; Narayanan, Badri; Sankaranarayanan, Subramanian K R S; Yan, Zhong; Balandin, Alexander A; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V

    2016-01-01

    The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics. PMID:27373740

  5. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

    NASA Astrophysics Data System (ADS)

    Berman, Diana; Deshmukh, Sanket A.; Narayanan, Badri; Sankaranarayanan, Subramanian K. R. S.; Yan, Zhong; Balandin, Alexander A.; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V.

    2016-07-01

    The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.

  6. Diamond nanowires for highly sensitive matrix-free mass spectrometry analysis of small molecules.

    PubMed

    Coffinier, Yannick; Szunerits, Sabine; Drobecq, Hervé; Melnyk, Oleg; Boukherroub, Rabah

    2012-01-01

    This paper reports on the use of boron-doped diamond nanowires (BDD NWs) as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry (LDI-MS) analysis of small molecules. The diamond nanowires are prepared by reactive ion etching (RIE) with oxygen plasma of highly boron-doped (the boron level is 10(19) B cm(-3)) or undoped nanocrystalline diamond substrates. The resulting diamond nanowires are coated with a thin silicon oxide layer that confers a superhydrophilic character to the surface. To minimize droplet spreading, the nanowires were chemically functionalized with octadecyltrichlorosilane (OTS) and then UV/ozone treated to reach a final water contact angle of 120°. The sub-bandgap absorption under UV laser irradiation and the heat confinement inside the nanowires allowed desorption/ionization, most likely via a thermal mechanism, and mass spectrometry analysis of small molecules. A detection limit of 200 zeptomole for verapamil was demonstrated.

  7. Ultrafast transformation of graphite to diamond: An ab initio molecular dynamics study of graphite under shock compression

    SciTech Connect

    Mundy, Christopher J.; Curioni, Alessandro; Kuo, I-F W.; Goldman, Nir; Reed, Evan; Fried, Larry; Ianuzzi, Marcella

    2008-05-14

    This work was performed while I was LLNL. We present an extremely large scale ab initio calculation of the transformation of graphite to diamond under shock compression utilizing Car-Parrinello Molecular Dynamics (CPMD) in conjunction with the Multi-scale Shock Method (MSSM). Our results indicate that the transition from graphite to diamond is Martensitic, in agreement with experimental observations. We find that a shock of 12 km/s forms a short-lived layered diamond phase that eventually relaxes to a cubic diamond state. Moreover, access to the electronic structure allows the computation of the x-ray absorption spectra (XAS) to characterize the final states. The XAS spectra and wide angle x-ray scattering spectra (WAXS) confirm the presence of a cubic diamond final state.

  8. Development of Designer Diamond Technology for High Pressure High Temperature Experiments in Support of Stockpile Stewardship Program

    SciTech Connect

    Vohra, Yogesh, K.

    2009-10-28

    The role of nitrogen in the fabrication of designer diamond was systematically investigated by adding controlled amount of nitrogen in hydrogen/methane/oxygen plasma. This has led to a successful recipe for reproducible fabrication of designer diamond anvils for high-pressure high-temperature research in support of stockpile stewardship program. In the three-year support period, several designer diamonds fabricated with this new growth chemistry were utilized in high-pressure experiments at UAB and Lawrence Livermore National Laboratory. The designer diamond anvils were utilized in high-pressure studies on heavy rare earth metals, high pressure melting studies on metals, and electrical resistance measurements on iron-based layered superconductors under high pressures. The growth chemistry developed under NNSA support can be adapted for commercial production of designer diamonds.

  9. Design and fabrication of nano-scale single crystal diamond cutting tool by focused ion beam (FIB) milling

    NASA Astrophysics Data System (ADS)

    Baek, Seung-Yub

    2015-07-01

    Micro/nanoscale diamond cutting tools used in ultra-precision machining can be fabricated by precision grinding, but it is hard to fabricate a tool with a nanometric cutting edge and complex configurations. High-precision geometry accuracy and special shapes for microcutting tools with sharp edges can be achieved by FIB milling. Because the FIB milling method induces much smaller machining stress compared with conventional precision grinding methods. In this study, the FIB milling characteristics of single-crystal diamond were investigated, along with methods for decreasing the FIB-induced damage on diamond tools. Lift-off process method and Pt(Platinum) coating process method with FIB milling were investigated to reduce the damage layer on diamond substrate and quadrilateral-shaped single-crystal diamond cutting tool with cutting edge width under 500 nm were obtained.

  10. Electron Microscopy of Natural and Epitaxial Diamond

    NASA Technical Reports Server (NTRS)

    Posthill, J. B.; George, T.; Malta, D. P.; Humphreys, T. P.; Rudder, R. A.; Hudson, G. C.; Thomas, R. E.; Markunas, R. J.

    1993-01-01

    Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. Ultimately, it is preferable to use low-defect-density single crystal diamond for device fabrication. We have previously investigated polycrystalline diamond films with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and homoepitaxial films with SEM-based techniques. This contribution describes some of our most recent observations of the microstructure of natural diamond single crystals and homoepitaxial diamond thin films using TEM.

  11. Thermal Conductivity Of Natural Type IIa Diamond

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan; Vining, Cronin; Zoltan, Andrew

    1992-01-01

    Report describes application of flash diffusivity method to measure thermal conductivity of 8.04 x 8.84 x 2.35-mm specimen of natural, white, type-IIa diamond at temperatures between 500 and 1,250 K. Provides baseline for comparison to isotopically pure (12C) diamond. Results used as reference against which diamond films produced by chemical-vapor deposition at low pressures can be compared. High thermal conductivity of diamond exploited for wide variety of applications, and present results also used to estimate heat-conduction performances of diamond films in high-temperature applications.

  12. Diamond Ablators for Inertial Confinement Fusion

    SciTech Connect

    Biener, J; Mirkarimi, P B; Tringe, J W; Baker, S L; Wang, Y M; Kucheyev, S O; Teslich, N E; Wu, K J; Hamza, A V; Wild, C; Woerner, E; Koidl, P; Bruehne, K; Fecht, H

    2005-06-21

    Diamond has a unique combination of physical properties for the inertial confinement fusion ablator application, such as appropriate optical properties, high atomic density, high yield strength, and high thermal conductivity. Here, we present a feasible concept to fabricate diamond ablator shells. The fabrication of diamond capsules is a multi-step process, which involves diamond chemical vapor deposition on silicon mandrels followed by polishing, microfabrication of holes, and removing of the silicon mandrel by an etch process. We also discuss the pros and cons of coarse-grained optical quality and nanocrystalline chemical vapor deposition diamond films for the ablator application.

  13. Radiation monitoring with CVD diamonds in BABAR

    NASA Astrophysics Data System (ADS)

    Edwards, A. J.; Bruinsma, M.; Burchat, P.; Kagan, H.; Kass, R.; Kirkby, D.; Petersen, B. A.; Pulliam, T.

    2005-10-01

    The BABAR experiment has been using two polycrystalline chemical-vapor-deposition (pCVD) diamonds for radiation monitoring for nearly 2 years. In July 2005, an additional 12 diamond based radiation sensors will be installed inside the BABAR detector. These diamonds will take over the function of 12 silicon PIN-diodes that are currently used in the radiation protection and monitoring system. We describe our highly successful experience with using pCVD diamond radiation sensors in a high energy physics experiment. We also detail our findings of persistent signal currents and magnetically suppressed erratic dark currents in pCVD diamond based radiation sensors.

  14. Method for machining steel with diamond tools

    DOEpatents

    Casstevens, John M.

    1986-01-01

    The present invention is directed to a method for machining optical quality inishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

  15. Method for machining steel with diamond tools

    DOEpatents

    Casstevens, J.M.

    1984-01-01

    The present invention is directed to a method for machine optical quality finishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

  16. Recent results on CVD diamond radiation sensors

    NASA Astrophysics Data System (ADS)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  17. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    NASA Astrophysics Data System (ADS)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  18. CVD diamond film oxidation resistance research

    NASA Astrophysics Data System (ADS)

    Jing, Longwei; Wang, Xiaoping; Wang, Lijun; Pan, Xiufang; Sun, Yiqing; Wang, Jinye; Sun, Hongtao

    2013-12-01

    Diamond films were deposited on a silicon substrate by microwave plasma chemical vapor deposition system, and its oxidation experiments were carried out in atmospheric environmental condition by using a muffle furnace. Inatmospheric environment (the temperature is from 400°C to 900°C) the oxidation resistance of diamond thin films was investigated. The results indicate that under the atmospheric environment diamond thin film surface morphology did not change after 6 hours at 400°C. Diamond thin film surface morphology began to change after 2 hours at 600°C, and when time was extended to 4 hours, the diamond thin film surface morphology changed significantly. The surface morphology of diamond films began to change after 15 minutes at a 700°C condition and when time was extended to 6 hours diamond films were all destroyed. All the diamond films on the silicon substrate disappeared completely in 20 minutes at 900°C. The intact crystal face is the reason that natural diamond has stable chemical property. The crystal face of synthetic diamond film has a lot of defects, especially on the side. Oxidation of the diamond films begin with the grain boundary and defects.

  19. Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

    SciTech Connect

    Bousquet, J.; Chicot, G.; Eon, D.; Bustarret, E.

    2014-01-13

    The optimization of diamond-based unipolar electronic devices such as pseudo-vertical Schottky diodes or delta-doped field effect transistors relies in part on the sequential growth of nominally undoped (p{sup –}) and heavily boron doped (p{sup ++}) layers with well-controlled thicknesses and steep interfaces. Optical ellipsometry offers a swift and contactless method to characterize the thickness, roughness, and electronic properties of semiconducting and metallic diamond layers. We report ellipsometric studies carried out on delta-doped structures and other epitaxial multilayers with various boron concentrations and thicknesses (down to the nanometer range). The results are compared with Secondary Ion Mass Spectroscopy and transport measurements.

  20. Superhard material comparable in hardness to diamond

    SciTech Connect

    Badzian, A.R.

    1988-12-19

    Superhard boron suboxides, with hardness close to that of diamond, were synthesized from boron/boron oxide mixtures. Such hardness is expected when a material's molar volume approaches the value characteristic for diamond. These materials consist of boron-rich phases belonging to the boron-oxygen system. The phase which contains 4 at. % oxygen and a crystal structure related to ..beta..rhombohedral boron can scratch diamond faces. During scratching of diamond the suboxide is worn also, and the wear debris is amorphized. Wear on the lt. slash/100/ diamond faces results from a cleavage mechanism which leaves a rough surface covered with cleaved lt. slash/111/ microfaces. The lt. slash/100/ faces are more easily abraded than the lt. slash/111/ diamond faces. Wear on lt. slash/111/ faces consumes much more energy and leaves grooves of plastically deformed diamond.

  1. Superhard material comparable in hardness to diamond

    NASA Astrophysics Data System (ADS)

    Badzian, Andrzej R.

    1988-12-01

    Superhard boron suboxides, with hardness close to that of diamond, were synthesized from boron/boron oxide mixtures. Such hardness is expected when a material's molar volume approaches the value characteristic for diamond. These materials consist of boron-rich phases belonging to the boron-oxygen system. The phase which contains 4 at. % oxygen and a crystal structure related to β-rhombohedral boron can scratch diamond faces. During scratching of diamond the suboxide is worn also, and the wear debris is amorphized. Wear on the {100} diamond faces results from a cleavage mechanism which leaves a rough surface covered with cleaved {111} microfaces. The {100} faces are more easily abraded than the {111} diamond faces. Wear on {111} faces consumes much more energy and leaves grooves of plastically deformed diamond.

  2. Designing shallow donors in diamond

    NASA Astrophysics Data System (ADS)

    Moussa, Jonathan

    2015-03-01

    The production of n-type semiconducting diamond has been a long-standing experimental challenge. The first-principles simulation of shallow dopants in semiconductors has been a long-standing theoretical challenge. A desirable theoretical goal is to identify impurities that will act as shallow donors in diamond and assess their experimental viability. I will discuss this identification process for the LiN4 donor complex. It builds a scientific argument from several models and computational results in the absence of computational tools that are both trustworthy and computationally tractable for this task. I will compare the theoretical assessment of viability with recent experimental efforts to co-dope diamond with lithium and nitrogen. Finally, I discuss the computational tools needed to facilitate future work on this problem and some preliminary simulations of donors near diamond surfaces. Sandia National Laboratories is a multi-program lab managed and operated by Sandia Corp., a wholly owned subsidiary of Lockheed Martin Corp., for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  3. Diamond Nanophotonics and Quantum Optics

    NASA Astrophysics Data System (ADS)

    Barclay, Paul

    2011-10-01

    The diamond nitrogen-vacancy (NV) center is an optically active impurity whose ``atom-like'' properties make it a promising solid state qubit, in which well-defined optical transitions are used to control the quantum state of single NV electron and nuclear spins. These properties have led to impressive demonstrations of quantum information storage in single NV nuclear spins, entanglement between NV electron spins and single photons, and implementations of high resolution optical magnetometers using single NVs. A missing ingredient for implementing quantum information processing architectures with NVs is creating scalable coherent coupling between them. Nanophotonic circuits, in which waveguides function as a ``quantum bus'' between NVs embedded in optical microcavities, offer a chip-based solution to this hurdle. In my talk I will review recent advances in realizing nanophotonic devices in diamond based materials. I will present results demonstrating Purcell enhanced coupling between optical nanocavities and NVs in single crystal diamond, and will discuss opportunities and challenges which lay ahead for diamond quantum optics.

  4. OH and H2O of garnets in diamond-bearing and diamond-free garnet-clinopyroxene rocks from the Kumdy-kol area, Kokchetav Massif

    NASA Astrophysics Data System (ADS)

    Sakamaki, K.; Ogasawara, Y.

    2013-12-01

    Garnet-clinopyroxene (Grt-Cpx) rocks consisting mainly of Grt + Na-poor Cpx + calcite with various proportions, occur in the Kumdy-kol area. Diamond-bearing Grt-Cpx rock was first reported by Sobolev and Shatsky (1990) and has been well-known as one of the Kokchetav diamond-bearing rocks. UHP evidence, e.g., coesite exsolution from supersilicic titanite, was discovered also in the diamond-free Grt-Cpx rock (Inoue and Ogasawara, 2003). Presence/lack of diamond in Grt-Cpx rocks is one of important features to understand the stability of diamond in the Kokchetav UHP calcsilicate and carbonate rocks. We focused on OH and H2O in garnets in two types of Grt-Cpx rock to clarify fluid conditions during UHP metamorphism. One of the samples, the diamond-bearing Grt-Cpx rock (sample no. 25018; provided by Prof. H.-P. Schertl) is composed of two monomineralic layers, Grt-layer and Cpx-layer, with minor amounts of rutile and calcite. Coarse-grained diamond (up to 0.15 mm across) is included in garnet. Another Grt-Cpx rock, diamond-free one (sample no. XX16) shows a glanoblastic texture, and consists of Grt (30 %) + Cpx (30 %) + calcite (30 %) × titanite (5 %) with exsolved coesite-needles and plates. The precursor supersilicic compositions of titanite indicate six-coordinated Si at UHP conditions (Ogasawara et al, 2002; Sakamaki and Ogasawara, IGR in press). To understand the fluid environments during the formation of these two calcsilicate rocks, we chose garnets and conducted micro FT-IR spectroscopy. IR spectra of garnets in the diamond-bearing Grt-Cpx rock showed OH bands at 3430 and 3570 cm-1, sometimes with a week band at 3675 cm-1. The absorption band at 3570 cm-1 is the strongest and is sharp, whereas the band at 3430 cm-1 is broad. IR spectra of garnets in diamond-free one show strong OH bands at 3400 and 3555 cm-1, sometimes with week bands at 3590 and 3640 cm-1. The OH band at 3555 cm-1 is the strongest and is sharp, whereas the band at 3400 cm-1 is broad. IR

  5. High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation

    SciTech Connect

    Weishart, H.; Eichhorn, F.; Heera, V.; Pecz, B.; Barna, A.; Skorupa, W.

    2005-08-15

    In this paper the authors investigate the effect of implantation temperature on the structural properties of diamond implanted with high fluences of Si between 5.3x10{sup 17} Si cm{sup -2} and 1x10{sup 18} Si cm{sup -2}. In order to reduce radiation-induced damage and to enhance SiC formation the implantations were performed at elevated temperatures in the range from 900 to 1200 deg. C. Subsequently, all samples were annealed for 10 min at 1500 deg. C in a rf-heated furnace. X-ray diffraction revealed the formation of cubic SiC nanocrystallites in a buried layer inside the implanted diamond. The implantation-induced damage was assessed by analyzing graphitization of the surface-near layer using Raman spectroscopy. With increasing Si fluence the implantation-induced damage rises and the nearly perfect alignment of the formed SiC crystallites within the host diamond lattice deteriorates. However, raising the implantation temperature from 900 to 1000 deg. C reduces the damage in the diamond and increases the amount, size, and epitaxial alignment of the crystalline SiC precipitates. Further increase of the implantation temperature gives no improvement in the quality of the SiC-rich layer. Instead, the damaged diamond converts into graphite and the formation of SiC crystallites is obstructed.

  6. Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

    NASA Technical Reports Server (NTRS)

    Dimitrijevic, Steven (Inventor); Withers, James C. (Inventor); Loutfy, Raouf O. (Inventor)

    2005-01-01

    The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

  7. The boron doping of single crystal diamond for high power diode applications

    NASA Astrophysics Data System (ADS)

    Nicley, Shannon Singer

    concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. The corner architecture SBD structure is proposed as an alternative vertical architecture for the realization of high power, high temperature single crystal diamond diodes. The lightly doped layer of the diode is grown in a direction perpendicular to the previous epitaxial growth of the heavily doped layer, to reduce the threading type dislocations in the active region of the fabricated diodes. The first ever corner architecture SBD is fabricated and evaluated for diode performance, using the regimes identified for high quality boron doped diamond deposition at light and heavy doping levels.

  8. The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

    NASA Astrophysics Data System (ADS)

    Schaefer, D. M.

    2016-07-01

    After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

  9. Multiple Diamond Anvil (MDA) apparatus using nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Irifune, T.; Kunimoto, T.; Tange, Y.; Shinmei, T.; Isobe, F.; Kurio, A.; Funakoshi, K.

    2011-12-01

    Thanks to the great efforts by Dave Mao, Bill Bassett, Taro Takahashi, and their colleagues at the University of Rochester through 1960s-70s, diamond anvil cell (DAC) became a major tool to investigate the deep Earth after its invention by scientists at NBS in 1958. DAC can now cover almost the entire pressure and temperature regimes of the Earth's interior, which seems to have solved the longstanding debate on the crystal structure of iron under the P-T conditions of the Earth's inner core. In contrast, various types of static large-volume presses (LVP) have been invented, where tungsten carbide has conventionally been used as anvils. Kawai-type multianvil apparatus (MA), which utilize 6 first-stage harden steel and 8 tungsten carbide anvils, is the most successful LVP, and has been used for accurate measurements of phase transitions, physical properties, element partitioning, etc. at high pressure and temperature. However, pressures using tungsten carbide as the second-stage anvils have been limited to about 30 GPa due to significant plastic deformation of the anvils. Efforts have been made to expand this pressure limit by replacing tungsten carbide anvils with harder sintered diamond (SD) anvils over the last two decades, but the pressures available in KMA with SD anvils have still been limited to below 100 GPa. We succeeded to produce nano-polycrystalline diamond (NPD or HIME-Diamond) in 2003, which is known to have ultrahigh hardness, very high toughness and elastic stiffness, high transmittance of light, relatively low thermal conductivity. These properties are feasible for its use as anvils, and some preliminary experiments of application of NPD anvils to laser heated DAC have successfully made in the last few years. We are now able to synthesize NPD rods with about 1cm in both diameter and length using a newly constructed 6000-ton KMA at Geodynamics Research Center, Ehime University, and have just started to apply this new polycrystalline diamond as anvils

  10. Peculiarities of both light and beta-particles scattering by ultrathin diamond-like semiconductor film.

    PubMed

    Rumyantsev, Vladimir V; Shtaerman, Esfir Y

    2008-02-01

    Peculiarities of scattering of TM-polarized light wave by a diamond-like crystalline nano-layer are studied. They are due to specific dispersion of n-phonon polaritons localized in the layer. The IR polaritons discussed here (relating to diamond and Si crystals which are nonpolar materials) will only appear if some of the vibration modes become polar, e.g., due to the presence of the surface. As a result of mixing of g- and u-modes of ion oscillations along the (111)-direction in the near-surface layer, it is possible to observe additional (with respect to bulk) scattering of coherent electromagnetic waves of the Stokes and anti-Stokes frequencies. beta-particles can be utilized as an independent tool of study of new semiconductors, in particular thin diamond films. The effect associated with response of a quasi-two-dimensional diamond-like layer to the moving electron field is considered. beta-particle field induces phonon excitation modes to arise in the material. Coupled with the beta-particle electromagnetic modes they generate polaritons. Spectral density of the radiation intensity of the flashed phonon polaritons has been estimated as a function of the layer thickness as well as of the scattering angle and the beta-particle velocity.

  11. Medical applications of diamond particles and surfaces.

    SciTech Connect

    Narayan, R. J.; Boehm, R. D.; Sumant, A. V.

    2011-04-01

    Diamond has been considered for use in several medical applications due to its unique mechanical, chemical, optical, and biological properties. In this paper, methods for preparing synthetic diamond surfaces and particles are described. In addition, recent developments involving the use of diamond in prostheses, sensing, imaging, and drug delivery applications are reviewed. These developments suggest that diamond-containing structures will provide significant improvements in the diagnosis and treatment of medical conditions over the coming years. Diamond is an allotrope of carbon that is being considered for use in several medical applications. Ramachandran determined that the crystal structure of diamond consists of two close packed interpenetrating face centered cubic lattices; one lattice is shifted with respect to the other along the elemental cube space diagonal by one-quarter of its length. If one approximates carbon atoms as equal diameter rigid spheres, the filling of this construction is 34%. Due to the carbon-carbon distance (1.54 {angstrom}), diamond crystal exhibits the highest atomic density (1.76 x 10{sup 23} cm{sup -3}) of any solid. The very high bond energy between two carbon atoms (83 kcal/mol) and the directionality of tetrahedral bonds are the main reasons for the high strength of diamond. Diamond demonstrates the highest Vickers hardness value of any material (10,000 kg/mm{sup 2}). The tribological properties of diamond are also impressive; the coefficient of friction of polished diamond is 0.07 in argon and 0.05 in humid air. Diamond is resistant to corrosion except in an oxygen atmosphere at temperatures over 800 C. In addition, type IIa diamond exhibits the highest thermal conductivity of all materials (20 W cm{sup -1} K{sup -1} at room temperature).

  12. Synthesizing Diamond from Liquid Feedstock

    NASA Technical Reports Server (NTRS)

    Tzeng, Yonhua

    2005-01-01

    A relatively economical method of chemical vapor deposition (CVD) has been developed for synthesizing diamond crystals and films. Unlike prior CVD methods for synthesizing diamond, this method does not require precisely proportioned flows of compressed gas feedstocks or the use of electrical discharges to decompose the feedstocks to obtain free radicals needed for deposition chemical reactions. Instead, the feedstocks used in this method are mixtures of common organic liquids that can be prepared in advance, and decomposition of feedstock vapors is effected simply by heating. The feedstock used in this method is a solution comprising between 90 and 99 weight percent of methanol and the balance of one or more other oxyhydrocarbons that could include ethanol, isopropanol, and/or acetone. This mixture of compounds is chosen so that dissociation of molecules results in the desired proportions of carbon-containing radicals (principally, CH3) and of OH, H, and O radicals. Undesirably, the CVD temperature and pressure conditions thermodynamically favor the growth of graphite over the growth of diamond. The H radicals are desirable because they help to stabilize the growing surface of diamond by shifting the thermodynamic balance toward favoring the growth of diamond. The OH and O radicals are desirable because they preferentially etch graphite and other non-diamond carbon, thereby helping to ensure the net deposition of pure diamond. The non-methanol compounds are included in the solution because (1) methanol contains equal numbers of C and O atoms; (2) an excess of C over O is needed to obtain net deposition of diamond; and (3) the non-methanol molecules contain multiple carbon atoms for each oxygen atom and thus supply the needed excess carbon A typical apparatus used in this method includes a reservoir containing the feedstock liquid and a partially evacuated stainless-steel reaction chamber. The reservoir is connected to the chamber via tubing and a needle valve or

  13. Nanodiamonds in the Younger Dryas boundary sediment layer.

    PubMed

    Kennett, D J; Kennett, J P; West, A; Mercer, C; Hee, S S Que; Bement, L; Bunch, T E; Sellers, M; Wolbach, W S

    2009-01-01

    We report abundant nanodiamonds in sediments dating to 12.9 +/- 0.1 thousand calendar years before the present at multiple locations across North America. Selected area electron diffraction patterns reveal two diamond allotropes in this boundary layer but not above or below that interval. Cubic diamonds form under high temperature-pressure regimes, and n-diamonds also require extraordinary conditions, well outside the range of Earth's typical surficial processes but common to cosmic impacts. N-diamond concentrations range from approximately 10 to 3700 parts per billion by weight, comparable to amounts found in known impact layers. These diamonds provide strong evidence for Earth's collision with a rare swarm of carbonaceous chondrites or comets at the onset of the Younger Dryas cool interval, producing multiple airbursts and possible surface impacts, with severe repercussions for plants, animals, and humans in North America.

  14. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  15. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  16. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  17. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  18. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  19. Self-Lubricating, Wear-Resistant Diamond Films Developed for Use in Vacuum Environment

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Diamond's outstanding properties--extreme hardness, chemical and thermal inertness, and high strength and rigidity--make it an ideal material for many tribological applications, such as the bearings, valves, and engine parts in the harsh environment found in internal-combustion engines, jet engines, and space propulsion systems. It has been demonstrated that chemical-vapor-deposited diamond films have low coefficients of friction (on the order of 0.01) and low wear rates (less than 10(sup -7) mm (sup 3/N-m)) both in humid air and dry nitrogen but that they have both high coefficients of friction (greater than 0.4) and high wear rates (on the order of 1(sup -4) mm sup 3/N-m)) in vacuum. It is clear that surface modifications that provide acceptable levels of friction and wear properties will be necessary before diamond films can be used for tribological applications in a space-like, vacuum environment. Previously, it was found that coatings of amorphous, non-diamond carbon can provide low friction in vacuum. Therefore, to reduce the friction and wear of diamond film in vacuum, carbon ions were implanted in an attempt to form a surface layer of amorphous carbon phases on the diamond films.

  20. Boron δ-doped (111) diamond solution gate field effect transistors.

    PubMed

    Edgington, Robert; Ruslinda, A Rahim; Sato, Syunsuke; Ishiyama, Yuichiro; Tsuge, Kyosuke; Ono, Tasuku; Kawarada, Hiroshi; Jackman, Richard B

    2012-03-15

    A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

  1. Method of making a Josephson junction with a diamond-like carbon insulating barrier

    SciTech Connect

    Hed, A.Z.

    1991-11-12

    This patent describes a method of making a Josephson junction. It comprises depositing upon a substrate a first layer of high-temperature superconductive oxide having a critical temperature above 23 K.; depositing on the first layer to a thickness in excess of 200 angstroms an insulating layer of diamond-like carbon resistant to cation diffusion therethrough and incapable of interdiffusing with superconductive oxides of the junction; plasma etching the insulating layer to leave the insulating layer with a thickness of 20 to 100 angstroms on the first layer; to leave a continuous film thereof on the first layer of a thickness of 20 to 100 angstroms; and depositing on the insulating layer a second layer of high-temperature superconductive oxide having a critical temperature above 23 K. and forming with the first layer and the insulating layer a Josephson junction at a temperature at least equal to one of the critical temperatures.

  2. Optimizing the Growth of (111) Diamond for Diamond Based Magnetometry

    NASA Astrophysics Data System (ADS)

    Kamp, Eric; Godwin, Patrick; Samarth, Nitin; Snyder, David; de Las Casas, Charles; Awschalom, David D.

    Magnetometers based on nitrogen vacancy (NV) ensembles have recently achieved sub-picotesla sensitivities [Phys. Rev. X 5, 041001(2015)], putting the technique on par with SQUID and MFM magnetometry.Typically these sensors use (100) oriented diamond with NV centers forming along all four (111) crystal orientations.This allows for vector magnetometry, but is a hindrance to the absolute sensitivity. Diamond grown on (111) oriented substrates through microwave plasma enhanced chemical vapor deposition(MP-CVD) provides a promising route in this context since such films can exhibit preferential orientation greater than 99% [Appl. Phys. Lett.104, 102407 (2014)]. An important challenge though is to achieve sufficiently high NV center densities required for enhancing the sensitivity of an NV ensemble magnetometer.We report systematic studies of the MP-CVD growth and characterization of (111) oriented diamond, where we vary growth temperature, methane concentration, and nitrogen doping. For each film we study the Nitrogen to NV ratio, the NV- to NV0 ratio, and alignment percentage to minimize sources of decoherence and ensure preferential alignment. From these measurements we determine the optimal growth parameters for high sensitivity, NV center ensemble scalar magnetometry. Funded by NSF-DMR.

  3. Measurements and Studies of Secondary Electron Emission of Diamond Amplified Photocathode

    SciTech Connect

    Wu,Q.

    2008-10-01

    The Diamond Amplified Photocathode (DAP) is a novel approach to generating electrons. By following the primary electron beam, which is generated by traditional electron sources, with an amplifier, the electron beam available to the eventual application is increased by 1 to 2 orders of magnitude in current. Diamond has a very wide band gap of 5.47eV which allows for a good negative electron affinity with simple hydrogenation, diamond can hold more than 2000MV/m field before breakdown. Diamond also provides the best rigidity among all materials. These two characters offer the capability of applying high voltage across very thin diamond film to achieve high SEY and desired emission phase. The diamond amplifier also is capable of handling a large heat load by conduction and sub-nanosecond pulse input. The preparation of the diamond amplifier includes thinning and polishing, cleaning with acid etching, metallization, and hydrogenation. The best mechanical polishing available can provide high purity single crystal diamond films with no less than 100 {micro}m thickness and <15 nm Ra surface roughness. The ideal thickness for 700MHz beam is {approx}30 {micro}m, which requires further thinning with RIE or laser ablation. RIE can achieve atomic layer removal precision and roughness eventually, but the time consumption for this procedure is very significant. Laser ablation proved that with <266nm ps laser beam, the ablation process on the diamond can easily achieve removing a few microns per hour from the surface and <100nm roughness. For amplifier application, laser ablation is an adequate and efficient process to make ultra thin diamond wafers following mechanical polishing. Hydrogenation will terminate the diamond surface with monolayer of hydrogen, and form NEA so that secondary electrons in the conduction band can escape into the vacuum. The method is using hydrogen cracker to strike hydrogen atoms onto the bare diamond surface to form H-C bonds. Two independent

  4. Adhesive bonding and brazing of nanocrystalline diamond foil onto different substrate materials

    NASA Astrophysics Data System (ADS)

    Lodes, Matthias A.; Sailer, Stefan; Rosiwal, Stefan M.; Singer, Robert F.

    2013-10-01

    Diamond coatings are used in heavily stressed industrial applications to reduce friction and wear. Hot-filament chemical vapour deposition (HFCVD) is the favourable coating method, as it allows a coating of large surface areas with high homogeneity. Due to the high temperatures occurring in this CVD-process, the selection of substrate materials is limited. With the desire to coat light materials, steels and polymers a new approach has been developed. First, by using temperature-stable templates in the HFCVD and stripping off the diamond layer afterwards, a flexible, up to 150 μm thick and free standing nanocrystalline diamond foil (NCDF) can be produced. Afterwards, these NCDF can be applied on technical components through bonding and brazing, allowing any material as substrate. This two-step process offers the possibility to join a diamond layer on any desired surface. With a modified scratch test and Rockwell indentation testing the adhesion strength of NCDF on aluminium and steel is analysed. The results show that sufficient adhesion strength is reached both on steel and aluminium. The thermal stress in the substrates is very low and if failure occurs, cracks grow undercritically. Adhesion strength is even higher for the brazed samples, but here crack growth is critical, delaminating the diamond layer to some extent. In comparison to a sample directly coated with diamond, using a high-temperature CVD interlayer, the brazed as well as the adhesively bonded samples show very good performance, proving their competitiveness. A high support of the bonding layer could be identified as crucial, though in some cases a lower stiffness of the latter might be acceptable considering the possibility to completely avoid thermal stresses which occur during joining at higher temperatures.

  5. Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)

    SciTech Connect

    Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

    1995-12-01

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

  6. Laser damage threshold of diamond films

    NASA Technical Reports Server (NTRS)

    Albin, Sacharia; Cropper, Andre D.; Watkins, Linwood C.; Byvik, Charles E.; Buoncristiani, A. Martin

    1989-01-01

    The possibility that diamond films may inhibit laser-induced damage to optical components in laser systems films was investigated by measuring laser damage thresholds of free-standing diamond film windows, diamond films deposited on silicon substrates, and bare silicon substrate. Polycrystalline diamond films were deposited using a dc plasma-enhanced CVD process. It was found that free-standing diamond films had the highest laser damage threshold at 1064 nm. For a diamond film of 630 nm, the damage threshold was found to be 7 J/sq cm, as compared to a damage threshold of 4.5 J/sq cm for bare silicon, and a low value of 1.5 J/sq cm for the film/substrate combination. The damage mechanism is considered to involve melting or dielectric breakdown induced by laser radiation. The low value of the film/substrate combination is attributed to film stress and conditions of film deposition.

  7. Diamond thermoluminescence properties of different chondrites

    NASA Technical Reports Server (NTRS)

    Fisenko, A. V.; Kashkarov, L. L.; Semjonova, L. F.; Pillinger, C. T.

    1993-01-01

    It was found that thermoluminescence (TL) glows of diamonds depend on the origin of diamonds and the chondrite metamorphism degree. The investigation of TL of diamonds was continued and the results for diamonds from Murchison CM2, Krymka LL3.0, Kainsaz CO3, and Abee E4 were considered. The diamonds synthesized by CVD-process (samples 133, 159) and by detonation from soot (DDS-B14-89) were also analyzed for comparison. Before the TL measuring samples were annealed at approximately 350 C for a few seconds and then irradiated by gamma-rays of Cs-137 up to dose approximately 200 krad. TL-measurements were performed in the air atmosphere on the standard equipment. TL data for samples are shown. TL glow for some diamonds are also presented.

  8. The Toucan's Diamond

    NASA Astrophysics Data System (ADS)

    2006-06-01

    The Southern constellation Tucana (the Toucan) is probably best known as the home of the Small Magellanic Cloud, one of the satellite galaxies of the Milky Way. But Tucana also hosts another famous object that shines thousands of lights, like a magnificent, oversized diamond in the sky: the globular cluster 47 Tucanae. More popularly known as 47 Tuc, it is surpassed in size and brightness by only one other globular cluster, Omega Centauri. Globular clusters are gigantic families of stars, comprising several tens of thousands of stars, all thought to be born at the same time from the same cloud of gas [1]. As such, they constitute unique laboratories for the study of how stars evolve and interact. This is even more so because they are located at the same distance, so the brightness of different types of stars, at different stages in their evolution can be directly compared. The stars in globular clusters are held together by their mutual gravity which gives them their spherical shape, hence their name. Globular clusters are thought to be among the oldest objects in our Milky Way galaxy, and contain therefore mostly old, low-mass stars. ESO PR Photo 20/06 ESO PR Photo 20/06 Globular Cluster 47 Tuc 47 Tucanae is an impressive globular cluster that is visible with the unaided eye from the southern hemisphere. It was discovered in 1751 by the French astronomer Nicholas Louis de Lacaille who cataloged it in his list of southern nebulous objects. Located about 16 000 light years away, it has a total mass of about 1 million times the mass of the Sun and is 120 light years across, making it appear on the sky as big as the full moon. The colour image of 47 Tucanae presented here was taken with FORS1 on ESO's Very Large Telescope in 2001. The image covers only the densest, very central part of the cluster. The globular cluster extends in reality four times further away! As can be seen however, the density of stars rapidly drops off when moving away from the centre. The red

  9. Diamond turning machine controller implementation

    SciTech Connect

    Garrard, K.P.; Taylor, L.W.; Knight, B.F.; Fornaro, R.J.

    1988-12-01

    The standard controller for a Pnuemo ASG 2500 Diamond Turning Machine, an Allen Bradley 8200, has been replaced with a custom high-performance design. This controller consists of four major components. Axis position feedback information is provided by a Zygo Axiom 2/20 laser interferometer with 0.1 micro-inch resolution. Hardware interface logic couples the computers digital and analog I/O channels to the diamond turning machine`s analog motor controllers, the laser interferometer, and other machine status and control information. It also provides front panel switches for operator override of the computer controller and implement the emergency stop sequence. The remaining two components, the control computer hardware and software, are discussed in detail below.

  10. Diamonds and the african lithosphere.

    PubMed

    Boyd, F R; Gurney, J J

    1986-04-25

    Data and inferences drawn from studies of diamond inclusions, xenocrysts, and xenoliths in the kimberlites of southern Africa are combined to characterize the structure of that portion of the Kaapvaal craton that lies within the mantle. The craton has a root composed in large part of peridotites that are strongly depleted in basaltic components. The asthenosphere boundary shelves from depths of 170 to 190 kilometers beneath the craton to approximately 140 kilometers beneath the mobile belts bordering the craton on the south and west. The root formed earlier than 3 billion years ago, and at that time ambient temperatures in it were 900 degrees to 1200 degrees C; these temperatures are near those estimated from data for xenoliths erupted in the Late Cretaceous or from present-day heat-flow measurements. Many of the diamonds in southern Africa are believed to have crystallized in this root in Archean time and were xenocrysts in the kimberlites that brought them to the surface.

  11. Defect characterization in the diamond cutting tools

    SciTech Connect

    Zeren, Muzaffer . E-mail: zeren@kou.edu.tr; Karagoez, Sadi

    2006-08-15

    In this study, a general defect characterization in the diamond cutting tools used in natural stone cutting has been investigated. Transverse rupture tests were carried out with different matrix and diamond compositions. In these defect characterization studies on diamond cutting tool materials various microstructural analyses were performed using the techniques of light microscopy (LM), scanning electron microscopy (SEM), energy-dispersed X-ray spectrography (EDX) and image analysis (IA)

  12. Diamond-silicon carbide composite and method

    DOEpatents

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  13. Nanotwinned diamond with unprecedented hardness and stability.

    PubMed

    Huang, Quan; Yu, Dongli; Xu, Bo; Hu, Wentao; Ma, Yanming; Wang, Yanbin; Zhao, Zhisheng; Wen, Bin; He, Julong; Liu, Zhongyuan; Tian, Yongjun

    2014-06-12

    Although diamond is the hardest material for cutting tools, poor thermal stability has limited its applications, especially at high temperatures. Simultaneous improvement of the hardness and thermal stability of diamond has long been desirable. According to the Hall-Petch effect, the hardness of diamond can be enhanced by nanostructuring (by means of nanograined and nanotwinned microstructures), as shown in previous studies. However, for well-sintered nanograined diamonds, the grain sizes are technically limited to 10-30 nm (ref. 3), with degraded thermal stability compared with that of natural diamond. Recent success in synthesizing nanotwinned cubic boron nitride (nt-cBN) with a twin thickness down to ∼3.8 nm makes it feasible to simultaneously achieve smaller nanosize, ultrahardness and superior thermal stability. At present, nanotwinned diamond (nt-diamond) has not been fabricated successfully through direct conversions of various carbon precursors (such as graphite, amorphous carbon, glassy carbon and C60). Here we report the direct synthesis of nt-diamond with an average twin thickness of ∼5 nm, using a precursor of onion carbon nanoparticles at high pressure and high temperature, and the observation of a new monoclinic crystalline form of diamond coexisting with nt-diamond. The pure synthetic bulk nt-diamond material shows unprecedented hardness and thermal stability, with Vickers hardness up to ∼200 GPa and an in-air oxidization temperature more than 200 °C higher than that of natural diamond. The creation of nanotwinned microstructures offers a general pathway for manufacturing new advanced carbon-based materials with exceptional thermal stability and mechanical properties.

  14. Rapid Sintering of Nano-Diamond Compacts

    SciTech Connect

    Osipov, A.; Nauyoks, S; Zerda, T; Zaporozhets, O

    2009-01-01

    Diamond compacts were sintered from nano-size diamond crystals at high pressure, 8 GPa, and temperature above 1500 degrees C for very short times ranging from 5 to 11 s. Structure and mechanical properties of the compacts have been characterized. Although we have not completely avoided graphitization of diamonds, the amount of graphite produced was low, less than 2%, and despite relatively high porosity, the compacts were characterized by high hardness, bulk and Young moduli.

  15. Diamond detector for alpha-particle spectrometry.

    PubMed

    Dueñas, J A; de la Torre Pérez, J; Martín Sánchez, A; Martel, I

    2014-08-01

    An artificially grown high purity diamond was used as a detector for alpha-particle spectrometry. Diamond detectors can match the performance of silicon detectors employed in standard continuous air monitoring systems. Its radiation hardness and electronic properties make them ideal to work under extreme condition such as high temperature and ambient lights. A 50 μm thickness single-crystal diamond detector has been compared with a 300 μm passivated implanted planar silicon detector, under ambient conditions.

  16. Mineral resource of the month: diamond

    USGS Publications Warehouse

    Olson, Donald W.

    2009-01-01

    The article presents information on diamond, which is regarded as the world's most popular gemstone. It states that there is strength in the covalent bonding between its carbon atoms, resulting to the strength of its physical properties. The presence of colors in diamonds may be attributed to the impurities that settle in the crystal lattice. Diamonds have been used as decorative items since the ancient era.

  17. Nanotwinned diamond with unprecedented hardness and stability

    NASA Astrophysics Data System (ADS)

    Huang, Quan; Yu, Dongli; Xu, Bo; Hu, Wentao; Ma, Yanming; Wang, Yanbin; Zhao, Zhisheng; Wen, Bin; He, Julong; Liu, Zhongyuan; Tian, Yongjun

    2014-06-01

    Although diamond is the hardest material for cutting tools, poor thermal stability has limited its applications, especially at high temperatures. Simultaneous improvement of the hardness and thermal stability of diamond has long been desirable. According to the Hall-Petch effect, the hardness of diamond can be enhanced by nanostructuring (by means of nanograined and nanotwinned microstructures), as shown in previous studies. However, for well-sintered nanograined diamonds, the grain sizes are technically limited to 10-30 nm (ref. 3), with degraded thermal stability compared with that of natural diamond. Recent success in synthesizing nanotwinned cubic boron nitride (nt-cBN) with a twin thickness down to ~3.8 nm makes it feasible to simultaneously achieve smaller nanosize, ultrahardness and superior thermal stability. At present, nanotwinned diamond (nt-diamond) has not been fabricated successfully through direct conversions of various carbon precursors (such as graphite, amorphous carbon, glassy carbon and C60). Here we report the direct synthesis of nt-diamond with an average twin thickness of ~5 nm, using a precursor of onion carbon nanoparticles at high pressure and high temperature, and the observation of a new monoclinic crystalline form of diamond coexisting with nt-diamond. The pure synthetic bulk nt-diamond material shows unprecedented hardness and thermal stability, with Vickers hardness up to ~200 GPa and an in-air oxidization temperature more than 200 °C higher than that of natural diamond. The creation of nanotwinned microstructures offers a general pathway for manufacturing new advanced carbon-based materials with exceptional thermal stability and mechanical properties.

  18. [Distribution of nitrogen and hydrogen in diamond and its significance to nucleation and growth of diamond].

    PubMed

    Yang, Zhi-Jun; Peng, Ming-Sheng; Meng, Yu-Fei; Yuan, Zhi-Zhong; Su, Yu-Wei; Li, Hong-Zhong

    2007-06-01

    From the center to the rim of natural diamond there are differences in nitrogen and C-H bond contents, suggesting that diamond was formed under varying substance conditions. Both the nitrogen and C-H bond contents tend to decrease from the center to the rim as a whole, indicaing that nitrogen and hydrogen are expended little by little during the formation of diamond. But in the middle area of the sample both the nitrogen and C-H bond contents have a tendency to increase. This implies that nitrogen and hydrogen are added into the environment of diamond formation, meanwhile nitrogen is added earlier. So the procedure of diamond formation may be divided into three stages, namely nucleation and growth in the early stage, growth in the middle stage and in the late stage. In the early and late stages nitrogen and hydrogen are consumed in the environment of diamond formation. In the middle stage nitrogen and hydrogen must be replenished for the growth of diamond, and nitrogen should be replenished earlier than hydrogen. Hydrogen is useful to the nucleation and growth of diamond. During the formation of diamond the compounds of nitrogen and hydrogen do not exist. So we must avoid the formation of compounds of nitrogen and hydrogen for the nucleation and growth of diamond if we plan to introduce hydrogen to the synthesis of diamond at high temperature and high pressure (HPHT). Implanted hydrogen in graphite for the HPHT synthesis of diamond is a good choice.

  19. Diamond turning of thermoplastic polymers

    SciTech Connect

    Smith, E.; Scattergood, R.O.

    1988-12-01

    Single point diamond turning studies were made using a series of thermoplastic polymers with different glass transition temperatures. Variations in surface morphology and surface roughness were observed as a function of cutting speed. Lower glass transition temperatures facilitate smoother surface cuts and better surface finish. This can be attributed to the frictional heating that occurs during machining. Because of the very low glass transition temperatures in polymeric compared to inorganic glasses, the precision machining response can be very speed sensitive.

  20. Diamond Machining Applications And Capabilities

    NASA Astrophysics Data System (ADS)

    Benjamin, Roland J.

    1983-12-01

    Aspheric surface generation and precision machining have been important technologies at Hughes Optical Products, Inc. (formerly Optical Division, Bell & Howell Company) for over twenty years. Present machining capabilities and supporting services which are available on a custom basis are described. A variety of applications of diamond machining are illustrated, involving not only the usual reflective materials such as aluminum, copper, and electroless nickel but also such IR refractive materials as germanium, silicon, and chalcogenide glasses.

  1. Thin film diamond microstructure applications

    NASA Technical Reports Server (NTRS)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  2. Entanglement, holography and causal diamonds

    NASA Astrophysics Data System (ADS)

    de Boer, Jan; Haehl, Felix M.; Heller, Michal P.; Myers, Robert C.

    2016-08-01

    We argue that the degrees of freedom in a d-dimensional CFT can be reorganized in an insightful way by studying observables on the moduli space of causal diamonds (or equivalently, the space of pairs of timelike separated points). This 2 d-dimensional space naturally captures some of the fundamental nonlocality and causal structure inherent in the entanglement of CFT states. For any primary CFT operator, we construct an observable on this space, which is defined by smearing the associated one-point function over causal diamonds. Known examples of such quantities are the entanglement entropy of vacuum excitations and its higher spin generalizations. We show that in holographic CFTs, these observables are given by suitably defined integrals of dual bulk fields over the corresponding Ryu-Takayanagi minimal surfaces. Furthermore, we explain connections to the operator product expansion and the first law of entanglemententropy from this unifying point of view. We demonstrate that for small perturbations of the vacuum, our observables obey linear two-derivative equations of motion on the space of causal diamonds. In two dimensions, the latter is given by a product of two copies of a two-dimensional de Sitter space. For a class of universal states, we show that the entanglement entropy and its spin-three generalization obey nonlinear equations of motion with local interactions on this moduli space, which can be identified with Liouville and Toda equations, respectively. This suggests the possibility of extending the definition of our new observables beyond the linear level more generally and in such a way that they give rise to new dynamically interacting theories on the moduli space of causal diamonds. Various challenges one has to face in order to implement this idea are discussed.

  3. Diamond film deposition on WC-Co and steel substrates with a CrN interlayer for tribological applications

    NASA Astrophysics Data System (ADS)

    Chandran, Maneesh; Hoffman, Alon

    2016-06-01

    The most renowned property of diamond is its exceptional hardness. By depositing diamond films on tungsten carbide (WC-Co) and steel substrates, the hardness of diamond can be combined with the toughness of these materials, resulting in an excellent wear resistance material for tribological applications. However, poor adhesion of diamond coating on these substrates leads to a lesser lifetime for the diamond coated tools than expected. The prime reasons for the lack of proper adhesion are the preferential formation of graphitic layer at the interface due to the catalytic activities of cobalt/iron and the interfacial residual stresses due to the mismatch in thermal expansion coefficients of diamond (1.5  ×  10-6 K-1) and WC-Co (5.2  ×  10-6 K-1) or steel (12  ×  10-6 K-1). In this review, we discuss the possibility of using a Cr-N interlayer as a diffusion barrier to prevent the catalytic activities of cobalt/iron and also to relax the interfacial residual stresses to some extent to enhance the adhesion of diamond coatings on these substrates. An overview of the most pertinent results of the last two decades, including the recent progress is introduced. We describe in detail how the Cr-N interlayer with the desired properties is fabricated. We give a concise overview of diamond deposition process, including the methods to vary the grain size from microcrystalline to nanocrystalline, which are suitable for some tribological applications. We describe in detail on surface and interface analysis, residual stress measurements, assessment adhesion strength and tribological performance of diamond coated WC-Co and steel substrates using various characterization techniques. We conclude by highlighting the current progress and future perspectives of diamond coatings on these substrates for tribological applications.

  4. HRTEM study of Popigai impact diamond: heterogeneous diamond nanostructures in native amorphous carbon matrix

    NASA Astrophysics Data System (ADS)

    Kis, Viktoria K.; Shumilova, Tatyana; Masaitis, Victor

    2016-10-01

    High-resolution transmission electron microscopy was applied for the detailed nanostructural investigation of Popigai impact diamonds with the aim of revealing the nature of the amorphous carbon of the matrix. The successful application of two complementary specimen preparation methods, focused ion beam (FIB) milling and mechanical cleavage, allowed direct imaging of nanotwinned nanodiamond crystals embedded in a native amorphous carbon matrix for the first time. Based on its stability under the electron beam, native amorphous carbon can be easily distinguished from the amorphous carbon layer produced by FIB milling during specimen preparation. Electron energy loss spectroscopy of the native amorphous carbon revealed the dominance of sp 2-bonded carbon and the presence of a small amount of oxygen. The heterogeneous size distribution and twin density of the nanodiamond crystals and the structural properties of the native amorphous carbon are presumably related to non-graphitic (organic) carbon precursor material.

  5. HRTEM study of Popigai impact diamond: heterogeneous diamond nanostructures in native amorphous carbon matrix

    NASA Astrophysics Data System (ADS)

    Kis, Viktoria K.; Shumilova, Tatyana; Masaitis, Victor

    2016-07-01

    High-resolution transmission electron microscopy was applied for the detailed nanostructural investigation of Popigai impact diamonds with the aim of revealing the nature of the amorphous carbon of the matrix. The successful application of two complementary specimen preparation methods, focused ion beam (FIB) milling and mechanical cleavage, allowed direct imaging of nanotwinned nanodiamond crystals embedded in a native amorphous carbon matrix for the first time. Based on its stability under the electron beam, native amorphous carbon can be easily distinguished from the amorphous carbon layer produced by FIB milling during specimen preparation. Electron energy loss spectroscopy of the native amorphous carbon revealed the dominance of sp 2-bonded carbon and the presence of a small amount of oxygen. The heterogeneous size distribution and twin density of the nanodiamond crystals and the structural properties of the native amorphous carbon are presumably related to non-graphitic (organic) carbon precursor material.

  6. (Chemically vapor deposited diamond films)

    SciTech Connect

    Clausing, R.E.; Heatherly, L. Jr.

    1990-09-22

    The NATO-ASI on Diamond and Diamond-Like Films and Coatings'' was an opportunity for us to learn the latest research results from ongoing programs in the leading laboratories of the world and relate them to our work. Specific examples are given in the comprehensive report which follows. The meeting format provided an ideal environment to meet and interact with our international counterparts. It is clear that our studies are well regarded, and that we have established an excellent reputation in a short time. New opportunities for collaboration were identified. A panel discussion at the end of the meeting addressed the needs and opportunities in the synthesis of CVD diamond. The key scientific needs are those related to modeling the nucleation and growth processes and to elucidation of the critical roles of atomic hydrogen and the mechanisms of carbon addition to the growing surfaces. The development and more extensive use of in situ diagnostics for both surface and gas phases are important to solving these issues. The more immediate practical questions concern the identification of the growth-rate-limiting steps, the relation of growth parameters to the resulting film structure, and the dependence of properties on structure.

  7. Growth of diamond by atomic vapor deposition

    NASA Astrophysics Data System (ADS)

    Koizumi, Satoshi; Inuzuka, Tadao; Sawabe, Atsuhito; Suzuki, Kazuhiro

    1990-01-01

    Diamond has been synthesized by a new vacuum deposition method called atomic vapor deposition (AVD). In AVD, most of the evaporated carbon is decomposed to atomic carbon. Diamond growth has been achieved on Si(100) surfaces using AVD at a substrate temperature of 800 C in a hydrogen atmosphere at 0.0002 torr. The average diamond crystalline size, as determined by TEM, is 2000 A with a number density of 2 x 10 to the 8th/sq cm. It is found that diamond can be deposited at low pressure by the deposition of atomic carbon with the aid of hydrogen.

  8. Negative Electron Affinity Mechanism for Diamond Surfaces

    NASA Technical Reports Server (NTRS)

    Krainsky, I. L.; Asnin, V. M.

    1998-01-01

    The energy distribution of the secondary electrons for chemical vacuum deposited diamond films with Negative Electron Affinity (NEA) was investigated. It was found that while for completely hydrogenated diamond surfaces the negative electron affinity peak in the energy spectrum of the secondary electrons is present for any energy of the primary electrons, for partially hydrogenated diamond surfaces there is a critical energy above which the peak is present in the spectrum. This critical energy increases sharply when hydrogen coverage of the diamond surface diminishes. This effect was explained by the change of the NEA from the true type for the completely hydrogenated surface to the effective type for the partially hydrogenated surfaces.

  9. Processing of diamond by laser beam irradiation

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Masanori; Hirata, Atsushi

    1998-10-01

    YAG and ArF excimer laser beams, of which wavelengths are 1.06 micrometers and 193 nm respectively, have been applied to processing of a variety of diamonds. Cutting and smoothing of natural, CVD and sintered diamonds have been performed. CVD diamond films were prepared by arc discharge plasma jet CVD and microwave plasma CVD, and sintered diamonds contain metallic or ceramic binder have been used. Fundamental removal processes of diamond with YAG and ArF excimer laser have been investigated using natural single crystal and CVD diamonds in various atmospheres changing laser irradiation conditions such as average power, energy density and pulse repetition rates. Cutting of natural and CVD diamonds with YAG laser proceeds at higher peal power that occurs at lower pulse repetition rates. Smooth surfaces are obtained by excimer laser irradiation at the incident angle of 80 percent. In the cases of the processing with YAG laser, the effect of local heating by laser beam irradiation mainly assists the diamond processing, and diamond appears to be removed after graphitization and oxidization following vaporization in the atmosphere contains oxygen. The temperature measurement was carried out at backside of irradiation surface, and increase of temperature when YAG laser beam was irradiated was larger than that when excimer laser was irradiated. On the contrary, the detection of C, C2, C+, O2 and CO from the emission at the irradiation area with ArF excimer laser beam suggest that processing partly proceeds by the separation of carbon atoms from the surface of diamond after braking bonds between carbon atoms caused by laser beam. Cutting of sintered diamond with metallic binder was difficult because metallic binder remains in the groove while ceramic binder was easily removed. Processing technique using laser beams has been applied to surface planing, chip preparation and edge formation of CVD diamond and curved surface formation on sintered diamond. Surface planing was

  10. Nano-Crystals of c-Diamond, n-Diamond and i-Carbon Grown in Carbon-Ion Implanted Fused Quartz

    NASA Astrophysics Data System (ADS)

    Peng, J. L.; Orwa, J. O.; Jiang, B.; Prawer, S.; Bursill, L. A.

    Combined high-resolution transmission electron microscopy, selected area electron diffraction and parallel electron energy loss spectroscopy are used to characterise carbon nano-phases found embedded in fused quartz. These appear after implantation of 1 MeV carbon ions, followed by annealing in argon, oxygen and forming gas for 1 hour at 1100°C. For Ar, virtually all of the carbon diffuses out of the substrate with no observable carbon clusters for all doses studied. After annealing in oxygen, a crystalline COx phase is identified at the end of range, following a dose of 5×1017 C/cm2. Three nano-crystalline carbon phases, including diamond, appear after annealing in forming gas: these form a layer 170 nm beneath the fused quartz surface for all ion doses. The average size of these clusters and the corresponding phases depend on the ion dose; the smallest size of 5-7 nm diameter crystallise as fcc Fd¯ {3}m diamond following a dose of 0.5× 1017 C/cm2, whereas clusters of 8-13 nm diameter, for a higher dose of 2× 1017 C/cm2, have a Fm¯ {3}m modified phase of diamond known as n-diamond. The largest clusters, diameter 15-40 nm, for a dose of 5× 1017 C/cm2, have the cubic P213 (or P4232) structure known as i-carbon. These buried layered diamond and diamond-related materials may have applications for field emission and optical waveguide type devices.

  11. Diamond anvil cell for spectroscopic investigation of materials at high temperature, high pressure and shear

    DOEpatents

    Westerfield, Curtis L.; Morris, John S.; Agnew, Stephen F.

    1997-01-01

    Diamond anvil cell for spectroscopic investigation of materials at high temperature, high pressure and shear. A cell is described which, in combination with Fourier transform IR spectroscopy, permits the spectroscopic investigation of boundary layers under conditions of high temperature, high pressure and shear.

  12. Diamond anvil cell for spectroscopic investigation of materials at high temperature, high pressure and shear

    DOEpatents

    Westerfield, C.L.; Morris, J.S.; Agnew, S.F.

    1997-01-14

    Diamond anvil cell is described for spectroscopic investigation of materials at high temperature, high pressure and shear. A cell is described which, in combination with Fourier transform IR spectroscopy, permits the spectroscopic investigation of boundary layers under conditions of high temperature, high pressure and shear. 4 figs.

  13. AlN/single crystalline diamond piezoelectric structure as a high overtone bulk acoustic resonator

    NASA Astrophysics Data System (ADS)

    Sorokin, B. P.; Kvashnin, G. M.; Volkov, A. P.; Bormashov, V. S.; Aksenenkov, V. V.; Kuznetsov, M. S.; Gordeev, G. I.; Telichko, A. V.

    2013-03-01

    First, the Al/AlN/Al/Cr/diamond single crystal piezoelectric layered structure has been developed, and its properties have been investigated up to 8 GHz. The peculiarities associated with the influence of piezoelectric film on the Q factor of high overtones of substrate have been pointed out. High Q ˜ 104 has been found at 6-7 GHz band.

  14. High crystalline quality single crystal chemical vapour deposition diamond

    NASA Astrophysics Data System (ADS)

    Martineau, P. M.; Gaukroger, M. P.; Guy, K. B.; Lawson, S. C.; Twitchen, D. J.; Friel, I.; Hansen, J. O.; Summerton, G. C.; Addison, T. P. G.; Burns, R.

    2009-09-01

    Homoepitaxial chemical vapour deposition (CVD) on high pressure, high temperature (HPHT) synthetic diamond substrates allows the production of diamond material with controlled point defect content. In order to minimize the extended defect content, however, it is necessary to minimize the number of substrate extended defects that reach the initial growth surface and the nucleation of dislocations at the interface between the CVD layer and its substrate. X-ray topography has indicated that when type IIa HPHT synthetic substrates are used, the density of dislocations nucleating at the interface can be less than 400 cm-2. X-ray topography, photoluminescence imaging and birefringence microscopy of HPHT grown synthetic type IIa diamond clearly show that the extended defect content is growth sector dependent. lang111rang sectors contain the highest concentration of both stacking faults and dislocations but lang100rang sectors are relatively free of both. It has been shown that HPHT treatment of such material can significantly reduce the area of stacking faults and cause dislocations to move. This knowledge, coupled with an understanding of how growth sectors develop during HPHT synthesis, has been used to guide selection and processing of substrates suitable for CVD synthesis of material with high crystalline perfection and controlled point defect content.

  15. Glutamate biosensors based on diamond and graphene platforms.

    PubMed

    Hu, Jingping; Wisetsuwannaphum, Sirikarn; Foord, John S

    2014-01-01

    l-Glutamate is one of the most important neurotransmitters in the mammalian central nervous system, playing a vital role in many physiological processes and implicated in several neurological disorders, for which monitoring of dynamic levels of extracellular glutamate in the living brain tissues may contribute to medical understanding and treatments. Electrochemical sensing of glutamate has been developed recently mainly using platinum, carbon fibre and carbon nanotube electrodes. In the present work, we explore the fabrication and properties of electrochemical glutamate sensors fabricated on doped chemical vapour deposition diamond electrodes and graphene nanoplatelet structures. The sensors incorporate platinum nanoparticles to catalyse the electrooxidation of hydrogen peroxide, glutamate oxidase to oxidise glutamate, and a layer of poly-phenylenediamine to impart selectivity. The performance of the devices was compared to a similar sensor fabricated on glassy carbon. Both the diamond and the graphene sensor showed very competitive performance compared to the majority of existing electrochemical sensors. The graphene based sensor showed the best performance of the three investigated in terms of sensitivity, linear dynamic range and long term stability, whereas it was found that the diamond device showed the best limit of detection.

  16. Ab initio structure determination of n-diamond.

    PubMed

    Li, Da; Tian, Fubo; Chu, Binhua; Duan, Defang; Sha, Xiaojing; Lv, Yunzhou; Zhang, Huadi; Lu, Nan; Liu, Bingbing; Cui, Tian

    2015-08-24

    A systematic computational study on the crystal structure of n-diamond has been performed using first-principle methods. A novel carbon allotrope with hexagonal symmetry R32 space group has been predicted. We name it as HR-carbon. HR-carbon composed of lonsdaleite layers and unique C3 isosceles triangle rings, is stable over graphite phase above 14.2 GPa. The simulated x-ray diffraction pattern, Raman, and energy-loss near-edge spectrum can match the experimental results very well, indicating that HR-carbon is a likely candidate structure for n-diamond. HR-carbon has an incompressible atomic arrangement because of unique C3 isosceles triangle rings. The hardness and bulk modulus of HR-carbon are calculated to be 80 GPa and 427 GPa, respectively, which are comparable to those of diamond. C3 isosceles triangle rings are very important for the stability and hardness of HR-carbon.

  17. Electronic structure of hydrogenated diamond: Microscopical insight into surface conductivity

    NASA Astrophysics Data System (ADS)

    Iacobucci, S.; Alippi, Paola; Calvani, P.; Girolami, M.; Offi, F.; Petaccia, L.; Trucchi, D. M.

    2016-07-01

    We have correlated the surface conductivity of hydrogen-terminated diamond to the electronic structure in the Fermi region. Significant density of electronic states (DOS) in proximity of the Fermi edge has been measured by photoelectron spectroscopy (PES) on surfaces exposed to air, corresponding to a p -type electric conductive regime, while upon annealing a depletion of the DOS has been achieved, resembling the diamond insulating state. The surface and subsurface electronic structure has been determined, exploiting the different probing depths of PES applied in a photon energy range between 7 and 31 eV. Ab initio density functional calculations including surface charge depletion and band-bending effects favorably compare with electronic states measured by angular-resolved photoelectron spectroscopy. Such states are organized in the energy-momentum space in a twofold structure: one, bulk-derived, band disperses in the Γ -X direction with an average hole effective mass of (0.43 ±0.02 ) m0 , where m0 is the bare electron mass; a second flatter band, with an effective mass of (2.2 ±0.9 ) m0 , proves that a hole gas confined in the topmost layers is responsible for the conductivity of the (2 ×1 ) hydrogen-terminated diamond (100 ) surface.

  18. Glutamate biosensors based on diamond and graphene platforms.

    PubMed

    Hu, Jingping; Wisetsuwannaphum, Sirikarn; Foord, John S

    2014-01-01

    l-Glutamate is one of the most important neurotransmitters in the mammalian central nervous system, playing a vital role in many physiological processes and implicated in several neurological disorders, for which monitoring of dynamic levels of extracellular glutamate in the living brain tissues may contribute to medical understanding and treatments. Electrochemical sensing of glutamate has been developed recently mainly using platinum, carbon fibre and carbon nanotube electrodes. In the present work, we explore the fabrication and properties of electrochemical glutamate sensors fabricated on doped chemical vapour deposition diamond electrodes and graphene nanoplatelet structures. The sensors incorporate platinum nanoparticles to catalyse the electrooxidation of hydrogen peroxide, glutamate oxidase to oxidise glutamate, and a layer of poly-phenylenediamine to impart selectivity. The performance of the devices was compared to a similar sensor fabricated on glassy carbon. Both the diamond and the graphene sensor showed very competitive performance compared to the majority of existing electrochemical sensors. The graphene based sensor showed the best performance of the three investigated in terms of sensitivity, linear dynamic range and long term stability, whereas it was found that the diamond device showed the best limit of detection. PMID:25427169

  19. PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

    NASA Astrophysics Data System (ADS)

    Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

    2009-09-01

    Natural diamond has been valued for its appearance and mechanical properties for at least two thousand years. As a gem stone diamond is unsurpassed. However, scientific work, especially in the last 20 years, has demonstrated that diamond has numerous surprising properties and many unique ones. Some of the extreme properties have been known for many years, but the true scale of diamond's other highly desirable features is still only coming to light as control in the synthesis of diamond, and hence material perfection, improves. The ultimate prize for man-made diamond is surely not in the synthesis of gem stones, but in delivering technological solutions enabled by diamond to the challenges facing our society today. If the special properties are to be exploited to their full potential, at least four crucial factors must be considered. First, there must be sufficient scientific understanding of diamond to make applications effective, efficient and economical. Secondly, the means of fabrication and control of properties have to be achieved so that diamond's role can be optimised. Thirdly, it is not enough that its properties are superior to existing materials: they must be so much better that it is worth initiating new technologies to exploit them. Finally, any substantial applications will have to address the society's major needs worldwide. The clear technology drivers for the 21st century come from the biomedical technologies, the demand for energy subject to global constraints, and the information technologies, where perhaps diamond will provide the major enabling technology [1]. The papers in this volume concern the solid state physics of diamond, and primarily concern the first two factors: understanding, and control of properties. They address many of the outstanding basic problems, such as the identification of existing defects, which affect the material's properties, both desirable and less so. Regarding future substantial applications, one paper discusses

  20. Properties of chemical vapor infiltration diamond deposited in a diamond powder matrix

    SciTech Connect

    Panitz, J.K.G.; Tallant, D.R.; Hills, C.R.; Staley, D.J.

    1993-12-31

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors have developed two techniques: electrophoretic deposition and screen printing, to form nonmined diamond powder precursors on substrates. They then densify these precursors in a hot filament assisted reactor. Analysis indicated that a hot filament assisted chemical vapor infiltration process forms intergranular diamond deposits with properties that are to some degree different from predominantly hot-filament-assisted CVD material.

  1. Formation of diamond in the Earth's mantle.

    PubMed

    Stachel, Thomas; Harris, Jeff W

    2009-09-01

    The principal sources of natural diamonds are peridotitic (about 2/3 of diamonds) and eclogitic (1/3) domains located at 140-200 km depth in the subcratonic lithospheric mantle. There, diamonds probably form during redox reactions in the presence of melt (likely for eclogitic and lherzolitic diamonds) or under subsolidus conditions in the presence of CHO fluids (likely for harzburgitic diamonds). Co-variations of δ(13)C and the nitrogen content of diamonds suggest that two modes of formation may have been operational in peridotitic sources: (1) reduction of carbonates, that during closed system fractionation drives diamond compositions to higher δ(13)C values and lower nitrogen concentrations and (2) oxidation of methane, that in a closed system leads to a trend of decreasing δ(13)C with decreasing nitrogen. The present day redox state of subcratonic lithospheric mantle is generally too reduced to allow for methane oxidation to be a widespread process. Therefore, reduction of carbonate dissolved in melts and fluids is likely the dominant mode of diamond formation for the Phanerozoic (545 Ma-present) and Proterozoic (2.5 Ga-545 Ma). Model calculations indicate, however, that for predominantly Paleoarchean (3.6-3.2 Ga) to Mesoarchean (3.2-2.8 Ga) harzburgitic diamonds, methane reduction is the principal mode of precipitation. This suggests that the reduced present day character (oxygen fugacity below carbonate stability) of peridotitic diamond sources may be a secondary feature, possibly acquired during reducing Archean (>2.5 Ga) metasomatism. Recycling of biogenic carbonates back into the mantle through subduction only became an important process in the Paleoproterozoic (2.5-1.6 Ga) and diamonds forming during carbonate reduction, therefore, may predominantly be post-Archean in age. For eclogitic diamonds, open system fractionation processes involving separation of a CO(2) fluid appear to dominate, but in principal the same two modes of formation

  2. Formation of diamond in the Earth's mantle.

    PubMed

    Stachel, Thomas; Harris, Jeff W

    2009-09-01

    The principal sources of natural diamonds are peridotitic (about 2/3 of diamonds) and eclogitic (1/3) domains located at 140-200 km depth in the subcratonic lithospheric mantle. There, diamonds probably form during redox reactions in the presence of melt (likely for eclogitic and lherzolitic diamonds) or under subsolidus conditions in the presence of CHO fluids (likely for harzburgitic diamonds). Co-variations of δ(13)C and the nitrogen content of diamonds suggest that two modes of formation may have been operational in peridotitic sources: (1) reduction of carbonates, that during closed system fractionation drives diamond compositions to higher δ(13)C values and lower nitrogen concentrations and (2) oxidation of methane, that in a closed system leads to a trend of decreasing δ(13)C with decreasing nitrogen. The present day redox state of subcratonic lithospheric mantle is generally too reduced to allow for methane oxidation to be a widespread process. Therefore, reduction of carbonate dissolved in melts and fluids is likely the dominant mode of diamond formation for the Phanerozoic (545 Ma-present) and Proterozoic (2.5 Ga-545 Ma). Model calculations indicate, however, that for predominantly Paleoarchean (3.6-3.2 Ga) to Mesoarchean (3.2-2.8 Ga) harzburgitic diamonds, methane reduction is the principal mode of precipitation. This suggests that the reduced present day character (oxygen fugacity below carbonate stability) of peridotitic diamond sources may be a secondary feature, possibly acquired during reducing Archean (>2.5 Ga) metasomatism. Recycling of biogenic carbonates back into the mantle through subduction only became an important process in the Paleoproterozoic (2.5-1.6 Ga) and diamonds forming during carbonate reduction, therefore, may predominantly be post-Archean in age. For eclogitic diamonds, open system fractionation processes involving separation of a CO(2) fluid appear to dominate, but in principal the same two modes of formation

  3. The mechanical and strength properties of diamond.

    PubMed

    Field, J E

    2012-12-01

    Diamond is an exciting material with many outstanding properties; see, for example Field J E (ed) 1979 The Properties of Diamond (London: Academic) and Field J E (ed) 1992 The Properties of Natural and Synthetic Diamond (London: Academic). It is pre-eminent as a gemstone, an industrial tool and as a material for solid state research. Since natural diamonds grew deep below the Earth's surface before their ejection to mineable levels, they also contain valuable information for geologists. The key to many of diamond's properties is the rigidity of its structure which explains, for example, its exceptional hardness and its high thermal conductivity. Since 1953, it has been possible to grow synthetic diamond. Before then, it was effectively only possible to have natural diamond, with a small number of these found in the vicinity of meteorite impacts. Techniques are now available to grow gem quality synthetic diamonds greater than 1 carat (0.2 g) using high temperatures and pressures (HTHP) similar to those found in nature. However, the costs are high, and the largest commercially available industrial diamonds are about 0.01 carat in weight or about 1 mm in linear dimension. The bulk of synthetic diamonds used industrially are 600 µm or less. Over 75% of diamond used for industrial purposes today is synthetic material. In recent years, there have been two significant developments. The first is the production of composites based on diamond; these materials have a significantly greater toughness than diamond while still maintaining very high hardness and reasonable thermal conductivity. The second is the production at low pressures by metastable growth using chemical vapour deposition techniques. Deposition onto non-diamond substrates was first demonstrated by Spitsyn et al 1981 J. Cryst. Growth 52 219-26 and confirmed by Matsumoto et al 1982 Japan J. Appl. Phys. 21 L183-5. These developments have added further to the versatility of diamond. Two other groups of

  4. Diamond Growth in the Subduction Factory

    NASA Astrophysics Data System (ADS)

    Bureau, H.; Frost, D. J.; Bolfan-Casanova, N.; Leroy, C.; Estève, I.

    2014-12-01

    Natural diamonds are fabulous probes of the deep Earth Interior. They are the evidence of the deep storage of volatile elements, carbon at first, but also hydrogen and chlorine trapped as hydrous fluids in inclusions. The study of diamond growth processes in the lithosphere and mantle helps for our understanding of volatile elements cycling between deep reservoirs. We know now that inclusion-bearing diamonds similar to diamonds found in nature (i.e. polycrystalline, fibrous and coated diamonds) can grow in hydrous fluids or melts (Bureau et al., GCA 77, 202-214, 2012). Therefore, we propose that the best environment to promote such diamonds is the subduction factory, where highly hydrous fluids or melts are present. When oceanic plates are subducted in the lithosphere, they carry an oceanic crust soaked with seawater. While the slabs are traveling en route to the mantle, dehydration processes generate saline fluids highly concentrated in NaCl. In the present study we have experimentally shown that diamonds can grow from the saline fluids (up to 30 g/l NaCl in water) generated in subducted slabs. We have performed multi-anvil press experiments at 6-7 GPa and from 1300 to 1400°C during 6:00 hours to 30:00 hours. We observed large areas of new diamond grown in epitaxy on pure diamond seeds in salty hydrous carbonated melts, forming coated gems. The new rims are containing multi-component primary inclusions. Detailed characterizations of the diamonds and their inclusions have been performed and will be presented. These experimental results suggest that multi-component salty fluids of supercritical nature migrate with the slabs, down to the deep mantle. Such fluids may insure the first stage of the deep Earth's volatiles cycling (C, H, halogen elements) en route to the transition zone and the lower mantle. We suggest that the subduction factory may also be a diamond factory.

  5. The provenance of Borneo's enigmatic alluvial diamonds

    NASA Astrophysics Data System (ADS)

    White, Lloyd; Graham, Ian; Tanner, Dominique; Hall, Robert; Armstrong, Richard; Yaxley, Greg; Barron, Larry; Spencer, Lee; van Leeuwen, Theo

    2016-04-01

    Gem-quality diamonds occur in several alluvial deposits across central and southern Borneo. Borneo has been a known source of diamonds for centuries, but the location of their primary igneous source remains enigmatic. Numerous geological models have been proposed to explain the distribution of Borneo's diamonds. To assess these models, we used a variety of techniques to examine heavy minerals from Kalimantan's Cempaka paleoalluvial diamond deposit. This involved collecting U-Pb isotopic data, fission track and trace element geochemistry of zircon as well as major element geochemical data of spinels and morphological descriptions of zircon and diamond. Our results indicate that the Cempaka diamonds were likely derived from at least two sources, one which was relatively local and/or involved little reworking, and the other more distal recording several periods of reworking. The distal diamond source is interpreted to be diamond-bearing pipes that intruded the basement of a block that: (1) rifted from northwest Australia (East Java or SW Borneo) and the diamonds were recycled into its sedimentary cover, or: (2) were emplaced elsewhere (e.g. NW Australia) and transported to a block (e.g. East Java or SW Borneo). Both of these scenarios require the diamonds to be transported with the block when it rifted from NW Australia in the Late Jurassic. The 'local' diamonds could be associated with ophiolitic rocks that are exposed in the nearby Meratus Mountains, or could be diamondiferous diatremes associated with eroded Miocene high-K alkaline intrusions north of the Barito Basin. If this were the case, these intrusions would indicate that the lithosphere beneath SW Borneo is thick (~150 km or greater).

  6. Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

    NASA Technical Reports Server (NTRS)

    Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

    2004-01-01

    A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

  7. Method and apparatus for making diamond-like carbon films

    DOEpatents

    Pern, Fu-Jann; Touryan, Kenell J.; Panosyan, Zhozef Retevos; Gippius, Aleksey Alekseyevich

    2008-12-02

    Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm.sup.2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

  8. Nature of diamonds in Yakutian eclogites: views from eclogite tomography and mineral inclusions in diamonds

    NASA Astrophysics Data System (ADS)

    Anand, Mahesh; Taylor, Lawrence A.; Misra, Kula C.; Carlson, William D.; Sobolev, Nikolai V.

    2004-09-01

    We have performed dissections of two diamondiferous eclogites (UX-1 and U33/1) from the Udachnaya kimberlite, Yakutia in order to understand the nature of diamond formation and the relationship between the diamonds, their mineral inclusions, and host eclogite minerals. Diamonds were carefully recovered from each xenolith, based upon high-resolution X-ray tomography images and three-dimensional models. The nature and physical properties of minerals, in direct contact with diamonds, were investigated at the time of diamond extraction. Polished sections of the eclogites were made, containing the mould areas of the diamonds, to further investigate the chemical compositions of the host minerals and the phases that were in contact with diamonds. Major- and minor-element compositions of silicate and sulfide mineral inclusions in diamonds show variations among each other, and from those in the host eclogites. Oxygen isotope compositions of one garnet and five clinopyroxene inclusions in diamonds from another Udachnaya eclogite (U51) span the entire range recorded for eclogite xenoliths from Udachnaya. In addition, the reported compositions of almost all clinopyroxene inclusions in U51 diamonds exhibit positive Eu anomaly. This feature, together with the oxygen isotopic characteristics, is consistent with the well-established hypothesis of subduction origin for Udachnaya eclogite xenoliths. It is intuitive to expect that all eclogite xenoliths in a particular kimberlite should have common heritage, at least with respect to their included diamonds. However, the variation in the composition of multiple inclusions within diamonds, and among diamonds, from the same eclogite indicates the involvement of complex processes in diamond genesis, at least in the eclogite xenoliths from Yakutia that we have studied.

  9. Fluorinated diamond bonded in fluorocarbon resin

    DOEpatents

    Taylor, Gene W.

    1982-01-01

    By fluorinating diamond grit, the grit may be readily bonded into a fluorocarbon resin matrix. The matrix is formed by simple hot pressing techniques. Diamond grinding wheels may advantageously be manufactured using such a matrix. Teflon fluorocarbon resins are particularly well suited for using in forming the matrix.

  10. Diamond film growth argon-carbon plasmas

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Liu, Shengzhong; Pan, Xianzheng; Zuiker, Christopher D.

    1998-01-01

    A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

  11. Double bevel construction of a diamond anvil

    DOEpatents

    Moss, William C.

    1988-01-01

    A double or multiple bevel culet geometry is used on a diamond anvil in a high pressure cell apparatus to provide increased sample pressure and stability for a given force applied to the diamond tables. Double or multiple bevel culet geometries can also be used for sapphire or other hard crystal anvils. Pressures up to and above 5 Megabars can be reached.

  12. Double bevel construction of a diamond anvil

    DOEpatents

    Moss, W.C.

    1988-10-11

    A double or multiple bevel culet geometry is used on a diamond anvil in a high pressure cell apparatus to provide increased sample pressure and stability for a given force applied to the diamond tables. Double or multiple bevel culet geometries can also be used for sapphire or other hard crystal anvils. Pressures up to and above 5 Megabars can be reached. 8 figs.

  13. The World According to Jared Diamond.

    ERIC Educational Resources Information Center

    McNeil, J. R.

    2001-01-01

    Reviews the book, "Guns, Germs, and Steel: The Fates of Human Societies" (Jared Diamond). Examines the strengths of the book, focusing on its distinctive aspects, while also offering criticism. States that the final chapter is the most problematic part of Diamond's work. (CMK)

  14. Genetics Home Reference: Shwachman-Diamond syndrome

    MedlinePlus

    ... infection; and platelets, which are necessary for normal blood clotting. In Shwachman-Diamond syndrome , the bone marrow malfunctions and does not ... 06349.x. Citation on PubMed Dror Y. Shwachman-Diamond syndrome. Pediatr Blood Cancer. 2005 Dec;45(7):892-901. Review. ...

  15. Diamond film growth from fullerene precursors

    DOEpatents

    Gruen, Dieter M.; Liu, Shengzhong; Krauss, Alan R.; Pan, Xianzheng

    1997-01-01

    A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

  16. Infrared spectral and carbon isotopic characteristics of micro- and macro-diamonds from the Panda kimberlite (Central Slave Craton, Canada)

    NASA Astrophysics Data System (ADS)

    Melton, G. L.; Stachel, T.; Stern, R. A.; Carlson, J.; Harris, J. W.

    2013-09-01

    One hundred and twenty-one micro-diamonds (< 1 mm) and 90 macro-diamonds (2.5 mm to 3.4 mm) from the Panda kimberlite (Ekati mine, Central Slave Craton, Canada) were analyzed for nitrogen content, nitrogen aggregation state (%B) and platelet and hydrogen peak areas (cm- 2). Micro-diamond nitrogen concentrations range from < 10 at. ppm to 1696 at. ppm (median = 805 at. ppm) and the median aggregation state is 23%B. Macro-diamonds range from < 10 at. ppm to 1260 at. ppm (median = 187 at. ppm) nitrogen and have a median nitrogen aggregation of 26%B. Platelet and hydrogen peaks were observed in 37% and 79% of the micro-diamonds and 79% and 56% of the macro-diamonds, respectively. Nitrogen based time averaged residence temperatures indicate that micro- and macro-diamonds experienced similar thermal mantle residence histories, both populations displaying bimodal residence temperature distributions with a gap between 1130 °C and 1160 °C (at 3.5 Ga residence). In addition, SIMS carbon isotopic analyses for the micro-diamonds were obtained: δ13C compositions range from - 6.9‰ to + 1.8‰ (median = - 4.3‰). CL imaging reveals distinct growth layers that in some samples differ by > 2‰, but mostly vary by < 0.5‰. Comparison of only the “gem-quality” samples (n = 49 micro- and 90 macro-diamonds) between the two diamond sets, indicates a statistically significant shift of + 1.3‰ in average δ13C from macro- to micro-diamonds and this shift documents distinct diamond forming fluids, fractionation process or growth histories. A broad transition to heavier isotopic values is also observed in connection to decreasing mantle residence temperatures. The bimodal mantle residence temperature distribution may coincide with the transition from highly depleted shallow to more fertile deep lithospheric mantle observed beneath the Central Slave Craton. The increase in δ13C with decreasing residence temperature (proxy for decreasing depth) is interpreted to reflect diamond

  17. Structures of diamond-like phases

    SciTech Connect

    Greshnyakov, V. A.; Belenkov, E. A.

    2011-07-15

    The diamond-like phases containing carbon atoms with the same degree of hybridization, which is close to sp{sup 3}, are classified. It is found that twenty such phases can exist, and ten of them are described for the first time. Molecular mechanics and semi-empirical quantum-mechanical methods are used to calculate the geometrically optimized structures of diamond-like phase clusters and to determine their structural parameters and properties, such as the density, the bulk modulus, and the sublimation energy. The difference between the properties of the diamond-like phases and those of diamond is found to be determined by the difference between the structures of these phases and diamond.

  18. Carbon transport in diamond anvil cells

    SciTech Connect

    Prakapenka, V.B.; Shen, G.; Dubrovinsky, L.S.

    2010-11-10

    High-pressure-induced carbon transport from diamond anvils into the pressure chamber of diamond anvil cells (DACs) was studied by micro-Raman spectroscopy. Depending on experimental conditions (temperature and pressure), various carbon phases (amorphous carbon, diamond, microcrystalline or nanocrystalline graphite) were detected in the originally carbon-free samples. Temperature-induced growth of a graphite phase at the sample/diamond interface was observed in situ at high pressure in an externally heated DAC. In laser-heated samples inside the pressure-transmitting medium, at pressures above 6 GPa there was transport of carbon from the diamond culet surface into the heated part of the sample. These observations suggest that account should be taken of possible carbon diffusion in high-pressure research with DACs, such as high-pressure melting, element partitioning, phase transformations, chemical reactions, and electrical resistivity.

  19. Magnetic imaging with an ensemble of nitrogen vacancy-centers in diamond

    NASA Astrophysics Data System (ADS)

    Chipaux, Mayeul; Tallaire, Alexandre; Achard, Jocelyn; Pezzagna, Sébastien; Meijer, Jan; Jacques, Vincent; Roch, Jean-François; Debuisschert, Thierry

    2015-07-01

    The nitrogen-vacancy (NV) color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. An external magnetic field induces Zeeman shifts of the NV center levels which can be measured using optically detected magnetic resonance (ODMR). In this work, we quantitatively map the vectorial structure of the magnetic field produced by a sample close to the surface of a CVD diamond hosting a thin layer of NV centers. The magnetic field reconstruction is based on a maximum-likelihood technique which exploits the response of the four intrinsic orientations of the NV center inside the diamond lattice. The sensitivity associated to a 1 μm2 area of the doped layer, equivalent to a sensor consisting of approximately 104 NV centers, is of the order of 2 μT/√Hz. The spatial resolution of the imaging device is 480 nm, limited by the numerical aperture of the optical microscope which is used to collect the photoluminescence of the NV layer. The effectiveness of the method is illustrated by the accurate reconstruction of the magnetic field created by a DC current inside a copper wire deposited on the diamond sample.

  20. Ion-Beam-Induced Luminescence Analysis as Diagnostic Tool for Microstructure Patterning on Diamond by Proton Beam Writing

    NASA Astrophysics Data System (ADS)

    Kada, Wataru; Yokoyama, Akihito; Koka, Masashi; Takano, Katsuyoshi; Satoh, Takahiro; Kamiya, Tomihiro

    2012-06-01

    An in situ diagnostics technique for proton beam writing (PBW) on chemical vapor deposition (CVD) diamond was newly established by developing a method of monochromatic ion-beam-induced luminescence (IBIL) analysis. As a compact optic system of IBIL analysis, a couple of optics including a monochromator and a photon counting photomultiplier were installed on the microbeam line of a 3 MV single-ended accelerator. Changes in the crystal structure of single-crystal CVD diamond were continuously monitored by observing the decay of IBIL at a wavelength related to them. Two-dimensional microscopy images of IBIL were also clearly visualized as patterns on diamond in the postprocess of PBW with the same experimental setup. The total fluence of the proton microbeam was well linked to the photon count of IBIL for the fabrication of micrometer-sized carbonized layers in the CVD diamond crystal.

  1. Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

    NASA Astrophysics Data System (ADS)

    Catledge, Shane Aaron

    The primary focus of this dissertation is the investigation of the processing-structure-property relationships of diamond films deposited on Ti-6Al-4V alloy by microwave plasma chemical vapor deposition (MPCVD). By depositing a well-adhered protective layer of diamond on an alloy component, its hardness, wear-resistance, performance, and overall lifetime could be significantly increased. However, due to the large thermal expansion mismatch between the diamond film and metal (and the corresponding residual stress induced in the film), film adhesion is typically unsatisfactory and often results in immediate delamination after processing. Therefore, it is a major goal of this research to improve adhesion of the diamond film to the alloy substrate. Through the use of innovative processing techniques involving MPCVD deposition conditions and methane (CH4), nitrogen (N2), and hydrogen (H2) chemistry, we have achieved diamond films which consistently adhere to the alloy substrate. In addition, we have discovered that, with the appropriate choice of deposition conditions, the film structure can be tailored to range from highly crystalline, well-faceted diamond to nanocrystalline diamond with extremely low surface roughness (as low as 27 nm). The relationship between processing and structure was studied using in-situ optical emission spectroscopy, micro-Raman spectroscopy, surface profilometry, glancing-angle x-ray diffraction, and scanning electron microscopy. We observe that when nitrogen is added to the H2/CH4 feedgas mixture, a carbon-nitrogen (CN) emission band arises and its relative abundance to the carbon dimer (C2) gas species is shown to have a pronounced influence on the diamond film structure. By appropriate choice of deposition chemistry and conditions, we can tailor the diamond film structure and its corresponding properties. The mechanical properties of interest in this thesis are those relating to the integrity of the film/substrate interface, as well as the

  2. Toroidal plasma enhanced CVD of diamond films

    SciTech Connect

    Zvanya, John Cullen, Christopher Morris, Thomas Krchnavek, Robert R.; Holber, William Basnett, Andrew Basnett, Robert; Hettinger, Jeffrey

    2014-09-01

    An inductively coupled toroidal plasma source is used as an alternative to microwave plasmas for chemical vapor deposition of diamond films. The source, operating at a frequency of 400 kHz, synthesizes diamond films from a mixture of argon, methane, and hydrogen. The toroidal design has been adapted to create a highly efficient environment for diamond film deposition: high gas temperature and a short distance from the sample to the plasma core. Using a toroidal plasma geometry operating in the medium frequency band allows for efficient (≈90%) coupling of AC line power to the plasma and a scalable path to high-power and large-area operation. In test runs, the source generates a high flux of atomic hydrogen over a large area, which is favorable for diamond film growth. Using a deposition temperature of 900–1050 °C and a source to sample distance of 0.1–2.0 cm, diamond films are deposited onto silicon substrates. The results showed that the deposition rate of the diamond films could be controlled using the sample temperature and source to sample spacing. The results also show the films exhibit good-quality polycrystalline diamond as verified by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. The scanning electron microscopy and x-ray diffraction results show that the samples exhibit diamond (111) and diamond (022) crystallites. The Raman results show that the sp{sup 3} peak has a narrow spectral width (FWHM 12 ± 0.5 cm{sup −1}) and that negligible amounts of the sp{sup 2} band are present, indicating good-quality diamond films.

  3. Opalescent Diamonds Enriched in Hydrocarbon Fluids

    NASA Astrophysics Data System (ADS)

    Leung, I.; Tsao, C.

    2006-05-01

    We studied a large number of diamonds from Liaoning, China. These diamonds are not gem-quality, do not have sharp corners and sharp edges, they are not suitable for making cutting tools. Such industrial diamonds are usually crushed to form abrasives, thus, they might escape the scrutiny of researchers. In China, diamonds were routinely soaked in HF overnight to remove mud and other substances, and no oil and grease were used in the processing. It is not uncommon to see iridescence in pink, pale yellow and grey diamonds. The most common opalescent colors are alternating sharp bands of intense pink and indigo blue, and, less frequently, bands of yellow and blue-green, all may appear in the same diamond. As the bands have uniform thickness, their colors might not be due simply to optical effects, but rather, might be chemically related. We had chosen 10 diamonds to study their FT-IR spectra. Six of the crystals exhibited a group of hydrocarbons (HCs) peaks located just below 3000 cm-1, while all but one had a C-H stretch peak at 3107 cm-1. Two other diamonds had weak HCs peaks, but a very strong peak at 3107 cm-1. Two more diamonds had very weak HCs and C-H stretch peaks. To sum up, when a spectrum has strong HCs peaks, the C-H stretch peak is weak, and vice versa. There seems to be a chemical relationship between the substances represented by these peaks. Our observations indicate that hydrocarbon fluids might have been trapped during crystallization, but subsequently unmixed into well- organized thin bands. If fluids observed in the opalescent diamonds were soaked up in the mantle, then the amount of hydrocarbons existing in Earth's mantle might be quite appreciable in some environment.

  4. Graphene diamond-like carbon films heterostructure

    SciTech Connect

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  5. Graphene diamond-like carbon films heterostructure

    NASA Astrophysics Data System (ADS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ˜25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  6. Lithospheric mantle structure and the diamond potential of kimberlites in southern D.R. Congo

    NASA Astrophysics Data System (ADS)

    Batumike, J. M.; Griffin, W. L.; O'Reilly, S. Y.

    2009-11-01

    Mantle-derived peridotitic garnet xenocrysts from kimberlites in the Mbuji Mayi and Kundelungu areas and from heavy-mineral concentrates collected in the Luebo area, D.R. Congo, have been analysed for major- and trace-element compositions in order to understand the structure and composition of the subcontinental lithospheric mantle (SCLM) and the diamond potential of the kimberlites. The lithosphere beneath the Kundelungu Plateau is ca 175 km thick and has been affected by pronounced melt metasomatism. Garnets from the Kundelungu Plateau indicate an initially cool geotherm (~ 35 mW/m 2), which was disturbed by asthenospheric melts that penetrated the SCLM shortly before kimberlite intrusion ca 32 Ma ago. Harzburgitic garnets are very rare, but some lherzolitic garnets display compositions similar to garnets included in diamond. Garnets from the Mbuji Mayi region indicate a cool geotherm (35 mW/m 2); the SCLM is ~ 210 km thick and was affected by melt-related and phlogopite-related metasomatisms. Harzburgitic garnets form about 33% of the analysed population. The garnets from the Luebo region indicate a cool lithospheric geotherm (35 mW/m 2) typical of cratonic areas. The SCLM from which the garnets were derived was relatively thick (205 km), affected by melt-related and phlogopite-related metasomatisms and characterised by the presence of a ~ 80-km thick harzburgite-rich layer. In terms of peridotitic diamond potential, Mbuji Mayi and Luebo are more prospective than Kundelungu. The initially cool conductive geotherm, the presence of some garnets with compositions similar to garnets included in diamond and the presence of sporadic diamond in the Kundelungu Plateau suggest that diamond initially was present in the lithosphere and the observed paucity of diamond may be due to the melt-related metasomatism that affected the lithosphere in the region. We suggest that the lithospheric mantle beneath Kundelungu is a strongly modified Archean cratonic lithosphere that has

  7. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

    PubMed Central

    2011-01-01

    Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices. PMID:27502672

  8. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Liao, Meiyong; Liu, Jiangwei; Sang, Liwen; Coathup, David; Li, Jiangling; Imura, Masataka; Koide, Yasuo; Ye, Haitao

    2015-02-01

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  9. Diamond growth on Fe-Cr-Al alloy by H2-plasma enhanced graphite etching

    NASA Astrophysics Data System (ADS)

    Li, Y. S.; Hirose, A.

    2007-04-01

    Without intermediate layer and surface pretreatment, adherent diamond films with high initial nucleation density have been deposited on Fe-15Cr-5Al (wt. %) alloy substrate. The deposition was performed using microwave hydrogen plasma enhanced graphite etching in a wide temperature range from 370to740°C. The high nucleation density and growth rate of diamond are primarily attributed to the unique precursors used (hydrogen plasma etched graphite) and the chemical nature of the substrate. The improvement in diamond adhesion to steel alloys is ascribed to the important role played by Al, mitigation of the catalytic function of iron by suppressing the preferential formation of loose graphite intermediate phase on steel surface.

  10. Time Dependent DD Neutrons Measurement Using a Single Crystal Chemical Vapor Deposition Diamond Detector on EAST

    NASA Astrophysics Data System (ADS)

    Du, Tengfei; Peng, Xingyu; Chen, Zhongjing; Hu, Zhimeng; Ge, Lijian; Hu, Liqun; Zhong, Guoqiang; Pu, Neng; Chen, Jinxiang; Fan, Tieshuan

    2016-09-01

    A single crystal chemical vapor deposition (scCVD) diamond detector has been successfully employed for neutron measurements in the EAST (Experimental Advanced Superconducting Tokamak) plasmas. The scCVD diamond detector coated with a 5 μm 6LiF (95% 6Li enriched) layer was placed inside a polyethylene moderator to enhance the detection efficiency. The time-dependent neutron emission from deuteron plasmas during neutral beam injection (NBI) heating was obtained. The measured results are compared with that of fission chamber detectors, which always act as standard neutron flux monitors. The scCVD diamond detector exhibits good reliability, stability and the capability to withstand harsh radiation environments despite its low detection efficiency due to the small active volume. supported by the National Magnetic Confinement Fusion Science Program of China (Nos. 2013GB106004 and 2012GB101003) and National Natural Science Foundation of China (No. 91226102)

  11. 16 CFR 23.13 - Disclosure of treatments to diamonds.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 16 Commercial Practices 1 2012-01-01 2012-01-01 false Disclosure of treatments to diamonds. 23.13... JEWELRY, PRECIOUS METALS, AND PEWTER INDUSTRIES § 23.13 Disclosure of treatments to diamonds. A diamond is a gemstone product. Treatments to diamonds should be disclosed in the manner prescribed in §...

  12. 16 CFR 23.13 - Disclosure of treatments to diamonds

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 16 Commercial Practices 1 2011-01-01 2011-01-01 false Disclosure of treatments to diamonds 23.13... JEWELRY, PRECIOUS METALS, AND PEWTER INDUSTRIES § 23.13 Disclosure of treatments to diamonds A diamond is a gemstone product. Treatments to diamonds should be disclosed in the manner prescribed in §...

  13. 16 CFR 23.13 - Disclosure of treatments to diamonds.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 16 Commercial Practices 1 2013-01-01 2013-01-01 false Disclosure of treatments to diamonds. 23.13... JEWELRY, PRECIOUS METALS, AND PEWTER INDUSTRIES § 23.13 Disclosure of treatments to diamonds. A diamond is a gemstone product. Treatments to diamonds should be disclosed in the manner prescribed in §...

  14. 16 CFR 23.13 - Disclosure of treatments to diamonds.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 16 Commercial Practices 1 2014-01-01 2014-01-01 false Disclosure of treatments to diamonds. 23.13... JEWELRY, PRECIOUS METALS, AND PEWTER INDUSTRIES § 23.13 Disclosure of treatments to diamonds. A diamond is a gemstone product. Treatments to diamonds should be disclosed in the manner prescribed in §...

  15. 16 CFR 23.13 - Disclosure of treatments to diamonds

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 16 Commercial Practices 1 2010-01-01 2010-01-01 false Disclosure of treatments to diamonds 23.13... JEWELRY, PRECIOUS METALS, AND PEWTER INDUSTRIES § 23.13 Disclosure of treatments to diamonds A diamond is a gemstone product. Treatments to diamonds should be disclosed in the manner prescribed in §...

  16. Microstructure and thermal properties of copper–diamond composites with tungsten carbide coating on diamond particles

    SciTech Connect

    Kang, Qiping; He, Xinbo Ren, Shubin; Liu, Tingting; Liu, Qian; Wu, Mao; Qu, Xuanhui

    2015-07-15

    An effective method for preparing tungsten carbide coating on diamond surfaces was proposed to improve the interface bonding between diamond and copper. The WC coating was formed on the diamond surfaces with a reaction medium of WO{sub 3} in mixed molten NaCl–KCl salts and the copper–diamond composites were obtained by vacuum pressure infiltration of WC-coated diamond particles with pure copper. The microstructure of interface bonding between diamond and copper was discussed. Thermal conductivity and thermal expansion behavior of the obtained copper–diamond composites were investigated. Results indicated that the thermal conductivity of as-fabricated composite reached 658 W m{sup −} {sup 1} K{sup −} {sup 1}. Significant reduction in coefficient of thermal expansion of the composite compared with that of pure copper was obtained. - Highlights: • WC coating was successfully synthesized on diamond particles in molten salts. • WC coating obviously promoted the wettability of diamond and copper matrix. • WC coating greatly enhanced the thermal conductivity of Cu–diamond composite. • The composites are suitable candidates for heat sink applications.

  17. Alpha-Voltaic Sources Using Diamond as Conversion Medium

    NASA Technical Reports Server (NTRS)

    Patel, Jagadish U.; Fleurial, Jean-Pierre; Kolawa, Elizabeth

    2006-01-01

    A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of a particles into electricity in diamond semiconductor diodes. These power sources would function over a wide range of temperatures encountered in terrestrial and outer-space environments. These sources are expected to have operational lifetimes of 10 to 20 years and energy conversion efficiencies >35 percent. A power source according to the proposal would include a pair of devices like that shown in the figure. Each device would contain Schottky and p/n diode devices made from high-band-gap, radiation-hard diamond substrates. The n and p layers in the diode portion would be doped sparsely (<1014 cm-3) in order to maximize the volume of the depletion region and thereby maximize efficiency. The diode layers would be supported by an undoped diamond substrate. The source of a particles would be a thin film of 244Cm (half-life 18 years) sandwiched between the two paired devices. The sandwich arrangement would force almost every a particle to go through the active volume of at least one of the devices. Typical a particle track lengths in the devices would range from 20 to 30 microns. The a particles would be made to stop only in the undoped substrates to prevent damage to the crystalline structures of the diode portions. The overall dimensions of a typical source are expected to be about 2 by 2 by 1 mm. Assuming an initial 244Cm mass of 20 mg, the estimated initial output of the source is 20 mW (a current of 20 mA at a potential of 1 V).

  18. Diamonds and the african lithosphere.

    PubMed

    Boyd, F R; Gurney, J J

    1986-04-25

    Data and inferences drawn from studies of diamond inclusions, xenocrysts, and xenoliths in the kimberlites of southern Africa are combined to characterize the structure of that portion of the Kaapvaal craton that lies within the mantle. The craton has a root composed in large part of peridotites that are strongly depleted in basaltic components. The asthenosphere boundary shelves from depths of 170 to 190 kilometers beneath the craton to approximately 140 kilometers beneath the mobile belts bordering the craton on the south and west. The root formed earlier than 3 billion years ago, and at that time ambient temperatures in it were 900 degrees to 1200 degrees C; these temperatures are near those estimated from data for xenoliths erupted in the Late Cretaceous or from present-day heat-flow measurements. Many of the diamonds in southern Africa are believed to have crystallized in this root in Archean time and were xenocrysts in the kimberlites that brought them to the surface. PMID:17743571

  19. An insight into what superconducts in polycrystalline boron-doped diamonds based on investigations of microstructure

    PubMed Central

    Dubrovinskaia, N.; Wirth, R.; Wosnitza, J.; Papageorgiou, T.; Braun, H. F.; Miyajima, N.; Dubrovinsky, L.

    2008-01-01

    The discovery of superconductivity in polycrystalline boron-doped diamond (BDD) synthesized under high pressure and high temperatures [Ekimov, et al. (2004) Nature 428:542–545] has raised a number of questions on the origin of the superconducting state. It was suggested that the heavy boron doping of diamond eventually leads to superconductivity. To justify such statements more detailed information on the microstructure of the composite materials and on the exact boron content in the diamond grains is needed. For that we used high-resolution transmission electron microscopy and electron energy loss spectroscopy. For the studied superconducting BDD samples synthesized at high pressures and high temperatures the diamond grain sizes are ≈1–2 μm with a boron content between 0.2 (2) and 0.5 (1) at %. The grains are separated by 10- to 20-nm-thick layers and triangular-shaped pockets of predominantly (at least 95 at %) amorphous boron. These results render superconductivity caused by the heavy boron doping in diamond highly unlikely. PMID:18697937

  20. Morphology, functionality and molecular conformation study of CVD diamond surfaces functionalised with organic linkers and DNA

    NASA Astrophysics Data System (ADS)

    Wenmackers, Sylvia

    This PhD thesis fits within a joint-venture of physicists and biomedical researchers, aimed at the development of diamond-based DNA sensors. CVD diamond was chosen as the substrate material, because a strong covalent carbon-carbon bond can be created in this case, creating a highly stable platform for reusable biosensors or even for continuous monitoring. Moreover, diamond has favourable properties for sensing based on optical (transparency for a large spectral range) as well as electrical signals (semiconductor, stable in aqueous solutions with a wide potential window). The first specific goal for this thesis within the project was to establish the initial functionalisation of CVD diamond surfaces that would allow for the covalent linking of biomolecules, in casu DNA. This was obtained by UV attachement of omega-unsaturated fatty acid molecules (10-undecenoic acid) followed by the use of the zero-length crosslinker EDC to attach amino-modified DNA. The second goal was to characterise the diamond surfaces extensively with physical and (bio-)chemical methods to check the effectiveness of various surface treatments, and to elucidate the molecular organisation of the obtained linker layers and DNA brushes. Point mutation-sensitivity was achieved with end-point fluorescence as well as a real-time label-free electrical sensor prototype. The conformation of the end-tethered DNA molecules was investigated with spectroscopic ellipsometry.

  1. Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

    NASA Astrophysics Data System (ADS)

    Verona, C.; Ciccognani, W.; Colangeli, S.; Limiti, E.; Marinelli, Marco; Verona-Rinati, G.

    2016-07-01

    We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 1013 cm-2, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 1013 cm-2 and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.

  2. Creation of deep blue light emitting nitrogen-vacancy center in nanosized diamond

    NASA Astrophysics Data System (ADS)

    Himics, L.; Tóth, S.; Veres, M.; Balogh, Z.; Koós, M.

    2014-03-01

    This paper reports on the formation of complex defect centers related to the N3 center in nanosized diamond by employing plasma immersion and focused ion beam implantation methods. He+ ion implantation into nanosized diamond "layer" was performed with the aim of creating carbon atom vacancies in the diamond structure, followed by the introduction of molecular N2+ ion and heat treatment in vacuum at 750 °C to initiate vacancy diffusion. To decrease the sp2 carbon content of nanosized diamond formed during the implantation processes, a further heat treatment at 450 °C in flowing air atmosphere was used. The modification of the bonding properties after each step of defect creation was monitored by Raman scattering measurements. The fluorescence measurements of implanted and annealed nanosized diamond showed the appearance of an intensive and narrow emission band with fine structures at 2.98 eV, 2.83 eV, and 2.71 eV photon energies.

  3. Diamond formation - Where, when and how?

    NASA Astrophysics Data System (ADS)

    Stachel, T.; Luth, R. W.

    2015-04-01

    Geothermobarometric calculations for a worldwide database of inclusions in diamond indicate that formation of the dominant harzburgitic diamond association occurred predominantly (90%) under subsolidus conditions. Diamonds in eclogitic and lherzolitic lithologies grew in the presence of a melt, unless their formation is related to strongly reducing CHO fluids that would increase the solidus temperature or occurred at pressure-temperature conditions below about 5 GPa and 1050 °C. Three quarters of peridotitic garnet inclusions in diamond classify as "depleted" due to their low Y and Zr contents but, based on LREEN-HREEN ratios invariably near or greater than one, they nevertheless reflect re-enrichment through either highly fractionated fluids or small amounts of melt. The trace element signatures of harzburgitic and lherzolitic garnet inclusions are broadly consistent with formation under subsolidus and supersolidus conditions, respectively. Diamond formation may be followed by cooling in the range of ~ 60-180 °C as a consequence of slow thermal relaxation or, in the case of the Kimberley area in South Africa, possibly uplift due to extension in the lithospheric mantle. In other cases, diamond formation and final residence took place at comparable temperatures or even associated with small temperature increases over time. Diamond formation in peridotitic substrates can only occur at conditions at least as reducing as the EMOD buffer. Evaluation of the redox state of 225 garnet peridotite xenoliths from cratons worldwide indicates that the vast majority of samples deriving from within the diamond stability field represent fO2 conditions below EMOD. Modeling reveals that less than 50 ppm fluid are required to completely reset the redox state of depleted cratonic peridotite to that of the fluid. Consequently, the overall reduced state of diamond stable peridotites implies that the last fluids to interact with the deep cratonic lithosphere were generally reducing in

  4. The Geopolitical Setting of Conflict Diamonds.

    NASA Astrophysics Data System (ADS)

    Haggerty, S. E.

    2002-05-01

    September 11, 2001 will live in infamy. Ideological differences have also led to senseless atrocities in Angola, Congo Republic, Sierra Leone, and Liberia. Hundreds of thousands have died, scores mutilated, and millions displaced. These have gone virtually unnoticed for decades. Unnoticed that is until it became evident that these barbaric acts were fueled by the sale or bartering of diamonds for arms, or by more ingenious ways that are less traceable. There is no end in sight. Industry has long recognized that about 20% of diamonds reaching the open market are smuggled from operating mines, and more recently that an additional 4% originates from conflict diamond sources. Diamond identification by laser inscription, ion implantation, or certification protocols are subject to fraudulent tampering. And these applied methods are thwarted if cutting and polishing centers are infiltrated, or if terrorist facilities are independently established. Mark ups are substantial (40-60%) from raw material to finished product. Tracking the paths of rough stones from mines to faceted gems is impractical because some 30-50 million cts of top quality material, or about 100 million stones, would require branding each year. Moreover, the long standing tradition of site-holdings and the bourse system of mixing or matching diamonds, inadvertently ensures regional anonymity. Conflict diamonds are mined in primary kimberlites and from widely dispersed alluvial fields in tropical jungle. Landscapes, eroded by 1-5 vertical km over 100 Ma, have transformed low grade primary deposits into unconsolidated sedimentary bonanzas. The current value of stones retrieved, by motivated diggers and skillful jiggers, in rebel held territories, is impossible to determine, but in 1993 amounted to tens of millions USD. Diamonds over 100 cts continue to surface at premier prices. Borders are porous, diamonds flow easily, and armed networks are permeable and mobile. Diamonds form at great depths (over 200 km

  5. Dislocation electrical conductivity of synthetic diamond films

    SciTech Connect

    Samsonenko, S. N. Samsonenko, N. D.

    2009-05-15

    A relationship between the electric resistance of single-crystal homoepitaxial and polycrystalline diamond films and their internal structure has been investigated. It is established that the electrical conductivity of undoped homoepitaxial and polycrystalline diamond films is directly related to the dislocation density in them. A relation linking the resistivity {rho} ({approx}10{sup 13}-10{sup 15} {omega} cm) with the dislocation density {gamma} ({approx}10{sup 14}-4 x 10{sup 16} m{sup -2}) is obtained. The character of this correlation is similar for both groups of homoepitaxial and polycrystalline diamond films. Thin ({approx}1-8 {mu}m) homoepitaxial and polycrystalline diamond films with small-angle dislocation boundaries between mosaic blocks exhibit dislocation conductivity. The activation energy of dislocation acceptor centers was calculated from the temperature dependence of the conductivity and was found to be {approx}0.3 eV. The conduction of thick diamond films (h > 10 {mu}m) with the resistivity {rho} {approx} 10{sup 8} {omega} cm is determined by the conduction of intercrystallite boundaries, which have a nondiamond hydrogenated structure. The electronic properties of the diamond films are compared with those of natural semiconductor diamonds of types IIb and Ic, in which dislocation acceptor centers have activation energies in the range 0.2-0.35 eV and are responsible for hole conduction.

  6. Progress on diamond amplified photo-cathode

    SciTech Connect

    Wang, E.; Ben-Zvi, I.; Burrill, A.; Kewisch, J.; Chang, X.; Rao, T.; Smedley, J.; Wu, Q.; Muller, E.; Xin, T.

    2011-03-28

    Two years ago, we obtained an emission gain of 40 from the Diamond Amplifier Cathode (DAC) in our test system. In our current systematic study of hydrogenation, the highest gain we registered in emission scanning was 178. We proved that our treatments for improving the diamond amplifiers are reproducible. Upcoming tests planned include testing DAC in a RF cavity. Already, we have designed a system for these tests using our 112 MHz superconducting cavity, wherein we will measure DAC parameters, such as the limit, if any, on emission current density, the bunch charge, and the bunch length. The diamond-amplified photocathode, that promises to support a high average current, low emittance, and a highly stable electron beam with a long lifetime, is under development for an electron source. The diamond, functioning as a secondary emitter amplifies the primary current, with a few KeV energy, that comes from the traditional cathode. Earlier, our group recorded a maximum gain of 40 in the secondary electron emission from a diamond amplifier. In this article, we detail our optimization of the hydrogenation process for a diamond amplifier that resulted in a stable emission gain of 140. We proved that these characteristics are reproducible. We now are designing a system to test the diamond amplifier cathode using an 112MHz SRF gun to measure the limits of the emission current's density, and on the bunch charge and bunch length.

  7. Phosphorylated nano-diamond/ Polyimide Nanocomposites

    NASA Astrophysics Data System (ADS)

    Beyler-Çiǧil, Asli; Çakmakçi, Emrah; Vezir Kahraman, Memet

    2014-08-01

    In this study, a novel route to synthesize polyimide (PI)/phosphorylated nanodiamond films with improved thermal and mechanical properties was developed. Surface phosphorylation of nano-diamond was performed in dichloromethane. Phosphorylation dramatically enhanced the thermal stability of nano-diamond. Poly(amic acid) (PAA), which is the precursor of PI, was successfully synthesized with 3,3',4,4'-Benzophenonetetracarboxylic dianhydride (BTDA) and 4,4'-oxydianiline (4,4'-ODA) in the solution of N,N- dimethylformamide (DMF). Pure BTDA-ODA polyimide films and phosphorylated nanodiamond containing BTDA-ODA PI films were prepared. The PAA displayed good compatibility with phosphorylated nano-diamond. The morphology of the polyimide (PI)/phosphorylated nano-diamond was characterized by scanning electron microscopy (SEM). Chemical structure of polyimide and polyimide (PI)/phosphorylated nano-diamond was characterized by FTIR. SEM and FTIR results showed that the phosphorylated nano-diamond was successfully prepared. Thermal properties of the polyimide (PI)/phosphorylated nanodiamond was characterized by thermogravimetric analysis (TGA). TGA results showed that the thermal stability of (PI)/phosphorylated nano-diamond film was increased.

  8. Free-standing nanomechanical and nanophotonic structures in single-crystal diamond

    NASA Astrophysics Data System (ADS)

    Burek, Michael John

    Realizing complex three-dimensional structures in a range of material systems is critical to a variety of emerging nanotechnologies. This is particularly true of nanomechanical and nanophotonic systems, both relying on free-standing small-scale components. In the case of nanomechanics, necessary mechanical degrees of freedom require physically isolated structures, such as suspended beams, cantilevers, and membranes. For nanophotonics, elements like waveguides and photonic crystal cavities rely on light confinement provided by total internal reflection or distributed Bragg reflection, both of which require refractive index contrast between the device and surrounding medium (often air). Such suspended nanostructures are typically fabricated in a heterolayer structure, comprising of device (top) and sacrificial (middle) layers supported by a substrate (bottom), using standard surface nanomachining techniques. A selective, isotropic etch is then used to remove the sacrificial layer, resulting in free-standing devices. While high-quality, crystalline, thin film heterolayer structures are readily available for silicon (as silicon-on-insulator (SOI)) or III-V semiconductors (i.e. GaAs/AlGaAs), there remains an extensive list of materials with attractive electro-optic, piezoelectric, quantum optical, and other properties for which high quality single-crystal thin film heterolayer structures are not available. These include complex metal oxides like lithium niobate (LiNbO3), silicon-based compounds such as silicon carbide (SiC), III-V nitrides including gallium nitride (GaN), and inert single-crystals such as diamond. Diamond is especially attractive for a variety of nanoscale technologies due to its exceptional physical and chemical properties, including high mechanical hardness, stiffness, and thermal conductivity. Optically, it is transparent over a wide wavelength range (from 220 nm to the far infrared), has a high refractive index (n ~ 2.4), and is host to a vast

  9. Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

    SciTech Connect

    Gruen, Dieter M.

    2012-09-04

    One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

  10. Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

    DOEpatents

    Gruen, Dieter M.

    2009-08-11

    One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

  11. Artifact Diamond Its Allure And Significance

    NASA Astrophysics Data System (ADS)

    Yoder, Max N.

    1989-01-01

    While the preponderance of the mechanical, optical, and electronic properties of natural diamond have been known for over a decade, only recently has artifact diamond in technologically useful form factors become an exciting possibility. The advent of sacrificial, lattice matched crystalline substrates provides the basis not only for semiconducting applications of diamond, but for optical mirrors, lenses, and windows as well. As a semiconductor, diamond has the highest resistivity, the highest saturated electron velocity, the highest thermal conductivity, the lowest dielectric constant, the highest dielectric strength, the greatest hardness, the largest bandgap and the smallest lattice constant of any material. It also has electron and hole mobilities greater than those of silicon. Its figure of merit as a microwave power amplifier is unexcelled and exceeds that of silicon by a multiplier of 8200. For integrated circuit potential, its thermal conductivity, saturated velocity, and dielectric constant also place it in the premier position (32 times that of silicon, 46 times that of GaAs). Although not verified, its radiation hardness should also be unmatched. Aside from its brilliant sparkle as a gemstone, there has been little use of diamond in the field of optics. Processing of the diamond surface now appears to be as simple as that of any other material --albeit with different techniques. In fact, it may be possible to etch diamond far more controllably (at economically viable rates) than any other material as the product of the etch is gaseous and the etched trough is self-cleaning. Other properties of diamond make it an ideal optical material. Among them are its unmatched thermal conductivity, its extremely low absorption loss above 228 nanometers, and unmatched Young's modulus, Poisson's ratio, tensile strength, hardness, thermal shock, and modulus of elasticity. If the recently-found mechanisms by which erbium impurities in III-V junctions can be made to "lase

  12. Charge multiplication effect in thin diamond films

    NASA Astrophysics Data System (ADS)

    Skukan, N.; Grilj, V.; Sudić, I.; Pomorski, M.; Kada, W.; Makino, T.; Kambayashi, Y.; Andoh, Y.; Onoda, S.; Sato, S.; Ohshima, T.; Kamiya, T.; Jakšić, M.

    2016-07-01

    Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanche multiplication and radiation detectors with extreme radiation hardness.

  13. Photoinduced laser etching of a diamond surface

    SciTech Connect

    Kononenko, V V; Komlenok, M S; Pimenov, S M; Konov, V I

    2007-11-30

    Nongraphitising ablation of the surface of a natural diamond single crystal irradiated by nanosecond UV laser pulses is studied experimentally. For laser fluences below the diamond graphitisation threshold, extremely low diamond etching rates (less than 1nm/1000 pulses) are obtained and the term nanoablation is used just for this process. The dependence of the nanoablation rate on the laser fluence is studied for samples irradiated both in air and in oxygen-free atmosphere. The effect of external heating on the nanoablation rate is analysed and a photochemical mechanism is proposed for describing it. (interaction of laser radiation with matter. laser plasma)

  14. Observation of twinning in diamond CVD films

    NASA Astrophysics Data System (ADS)

    Marciniak, W.; Fabisiak, K.; Orzeszko, S.; Rozploch, F.

    1992-10-01

    Diamond particles prepared by dc-glow-discharge enhanced HF-CVD hybrid method, from a mixture of acetone vapor and hydrogen gas have been examined by TEM, RHEED and dark field method of observation. Results suggest the presence of twinned diamond particles, which can be reconstructed by a sequence of twinning operations. Contrary to the 'stick model' of the lattice, very common five-fold symmetry of diamond microcrystals may be obtained by applying a number of edge dislocations rather than the continuous deformation of many tetrahedral C-C bonds.

  15. The nature and origin of interstellar diamond

    NASA Technical Reports Server (NTRS)

    Blake, David F.; Freund, Friedemann; Shipp, Ruth; Krishnan, Kannan F. M.; Echer, Charles J.

    1988-01-01

    The C-delta component of the Allende meteorite is a microscopic diamond some of whose properties seem in conflict with those expected of diamond. High spatial resolution analytical data are presented here which may help explain such results. Surface and interfacial carbon atoms in the component, which may comprise as much as 25 percent of the total, impart an 'amorphous' character to some spectral data. These data support the proposed high-pressure conversion of amorphous carbon and graphite into diamonds due to grain-grain collisions in the ISM, although a low-pressure mechanism of formation cannot be ruled out.

  16. Supernovae as sources of interstellar diamonds

    NASA Technical Reports Server (NTRS)

    Nuth, Joseph A., III; Allen, John E., Jr.

    1992-01-01

    Small hydrocarbon grains in the vicinity of a supernova could be annealed by the absorption of several far-ultraviolet photons to produce the tiny diamonds found in meteorites. These freshly-synthesized diamond grains would be bombarded by the heavy ions and neutrals in the supernovae outflow and would thereby acquire the distinctive noble-gas isotopic signature by which they were first isolated. Only diamonds formed relatively close to supernovae would acquire such a signature, since grains formed farther out would be subjected to a much diluted and less energetic plasma environment.

  17. Trace element compositions of submicroscopic inclusions in coated diamond: A tool for understanding diamond petrogenesis

    NASA Astrophysics Data System (ADS)

    Tomlinson, Emma; De Schrijver, Isabel; De Corte, Katrien; Jones, Adrian P.; Moens, Luc; Vanhaecke, Frank

    2005-10-01

    Trace element compositions of submicroscopic inclusions in both the core and the coat of five coated diamonds from the Democratic Republic of Congo (DRC, formerly Zaire) have been analyzed by Laser Ablation Inductively Coupled Mass Plasma Spectrometry (LA-ICP-MS). Both the diamond core and coat inclusions show a general 2-4-fold enrichment in incompatible elements relative to major elements. This level of enrichment is unlikely to be explained by the entrapment of silicate mantle minerals (olivine, garnet, clinopyroxene, phlogopite) alone and thus submicroscopic fluid or glass inclusions are inferred in both the diamond coat and in the gem quality diamond core. The diamond core fluids have elevated High Field Strength Element (Ti, Ta, Zr, Nb) concentrations and are enriched in U relative to inclusions in the diamond coats and relative to chondrite. The core fluids are also moderately enriched in LILE (Ba, Sr, K). Therefore, we suggest that the diamond cores contain inclusions of silicate melt. However, the Ni content and Ni/Fe ratio of the trapped fluid are very high for a silicate melt in equilibrium with mantle minerals; high Ni and Co concentrations in the diamond cores are attributed to the presence of a sulfide phase coexisting with silicate melt in the diamond core inclusions. Inclusions in the diamond coat are enriched in LILE (U, Ba, Sr, K) and La over the diamond core fluids and to chondrite. The coats have incompatible element ratios similar to natural carbonatite (coat fluid: Na/Ba ≈0.66, La/Ta≈130). The coat fluid is also moderately enriched in HFSE (Ta, Nb, Zr) when normalized to chondritic Al. LILE and La enrichment is related to the presence of a carbonatitic fluid in the diamond coat inclusions, which is mixed with a HFSE-rich hydrous silicate fluid similar to that in the core. The composition of the coat fluid is consistent with a genetic link to group 1 kimberlite.

  18. Amorphous Diamond MEMS and Sensors

    SciTech Connect

    SULLIVAN, JOHN P.; FRIEDMANN, THOMAS A.; ASHBY, CAROL I.; DE BOER, MAARTEN P.; SCHUBERT, W. KENT; SHUL, RANDY J.; HOHLFELDER, ROBERT J.; LAVAN, D.A.

    2002-06-01

    This report describes a new microsystems technology for the creation of microsensors and microelectromechanical systems (MEMS) using stress-free amorphous diamond (aD) films. Stress-free aD is a new material that has mechanical properties close to that of crystalline diamond, and the material is particularly promising for the development of high sensitivity microsensors and rugged and reliable MEMS. Some of the unique properties of aD include the ability to easily tailor film stress from compressive to slightly tensile, hardness and stiffness 80-90% that of crystalline diamond, very high wear resistance, a hydrophobic surface, extreme chemical inertness, chemical compatibility with silicon, controllable electrical conductivity from insulating to conducting, and biocompatibility. A variety of MEMS structures were fabricated from this material and evaluated. These structures included electrostatically-actuated comb drives, micro-tensile test structures, singly- and doubly-clamped beams, and friction and wear test structures. It was found that surface micromachined MEMS could be fabricated in this material easily and that the hydrophobic surface of the film enabled the release of structures without the need for special drying procedures or the use of applied hydrophobic coatings. Measurements using these structures revealed that aD has a Young's modulus of {approx}650 GPa, a tensile fracture strength of 8 GPa, and a fracture toughness of 8 MPa{center_dot}m {sup 1/2}. These results suggest that this material may be suitable in applications where stiction or wear is an issue. Flexural plate wave (FPW) microsensors were also fabricated from aD. These devices use membranes of aD as thin as {approx}100 nm. The performance of the aD FPW sensors was evaluated for the detection of volatile organic compounds using ethyl cellulose as the sensor coating. For comparable membrane thicknesses, the aD sensors showed better performance than silicon nitride based sensors. Greater than

  19. Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes

    NASA Astrophysics Data System (ADS)

    Matsumoto, R.; Sasama, Y.; Fujioka, M.; Irifune, T.; Tanaka, M.; Yamaguchi, T.; Takeya, H.; Takano, Y.

    2016-07-01

    A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression.

  20. Note: Novel diamond anvil cell for electrical measurements using boron-doped metallic diamond electrodes.

    PubMed

    Matsumoto, R; Sasama, Y; Fujioka, M; Irifune, T; Tanaka, M; Yamaguchi, T; Takeya, H; Takano, Y

    2016-07-01

    A novel diamond anvil cell suitable for electrical transport measurements under high pressure has been developed. A boron-doped metallic diamond film was deposited as an electrode on a nano-polycrystalline diamond anvil using a microwave plasma-assisted chemical vapor deposition technique combined with electron beam lithography. The maximum pressure that can be achieved by this assembly is above 30 GPa. We report electrical transport measurements of Pb up to 8 GPa. The boron-doped metallic diamond electrodes showed no signs of degradation after repeated compression. PMID:27475610