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Sample records for ultrathin hfo2 dielectric

  1. Band gap and band offsets for ultrathin (HfO2)x(SiO2)1-x dielectric films on Si (100)

    NASA Astrophysics Data System (ADS)

    Jin, H.; Oh, S. K.; Kang, H. J.; Cho, M.-H.

    2006-09-01

    Energy band profile of ultrathin Hf silicate dielectrics, grown by atomic layer deposition, was studied by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap energy only slightly increases from 5.52eV for (HfO2)0.75(SiO2)0.25 to 6.10eV for (HfO2)0.25(SiO2)0.75, which is much smaller than 8.90eV for SiO2. For ultrathin Hf silicate dielectrics, the band gap is mainly determined by the Hf 5d conduction band state and the O 2p valence band state. The corresponding conduction band offsets are in the vicinity of 1eV, which satisfies the minimum requirement for the carrier barrier heights.

  2. HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment

    NASA Astrophysics Data System (ADS)

    Agrawal, Khushabu S.; Patil, Vilas S.; Khairnar, Anil G.; Mahajan, Ashok M.

    2016-02-01

    Interfacial properties of the ALD deposited HfO2 over the surface nitrided germanium substrate have been studied. The formation of GeON (∼1.7 nm) was confirmed by X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron spectroscopy (HRTEM) over the germanium surface. The effect of post deposition annealing temperature was investigated to study the interfacial and electrical properties of hafnium oxide/germanium oxynitride gate stacks. The high-k MOS devices with ultrathin GeON layer shows the good electrical characteristics including higher k value ∼18, smaller equivalent oxide thickness (EOT) around 1.5 nm and smaller hysteresis value less than 170 mV. The Qeff and Dit values are somewhat greater due to the (1 1 1) orientation of the germanium and may be due to the presence of nitrogen at the interface. The Fowler-Northeim (FN) tunneling of Ge MOS devices has been studied. The barrier height ΦB extracted from the plot is ∼1 eV.

  3. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

    NASA Astrophysics Data System (ADS)

    Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee

    2005-03-01

    This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor field-effect transistor with nickel nanocrystals and HfO2 tunneling dielectrics is fabricated and its programming, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

  4. Electrical stress in CdS thin film transistors using HfO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    García, R.; Mejia, I.; Molinar-Solis, J. E.; Salas-Villasenor, A. L.; Morales, A.; García, B.; Quevedo-Lopez, M. A.; Alemán, M.

    2013-05-01

    During thin film transistor (TFT) operation, gate dielectric is under a bias stress condition. In this work, bias stress effect for CdS TFT using HfO2 as gate dielectric is analyzed. Threshold voltage, Ion/Ioff ratio, and subthreshold slope were studied in order to understand changes produced at the dielectric semiconductor interface. We observed that threshold voltage shift is related with negative charge trapping in the dielectric/semiconductor interface and for this phenomenon we propose a trapping charge model. Finally, the TFT output characteristic was modeled considering a shift in the threshold voltage for each gate voltage curve.

  5. Determination of complex dielectric functions at HfO(2)/Si interface by using STEM-VEELS.

    PubMed

    Park, Jucheol; Yang, Mino

    2009-04-01

    The complex dielectric functions and refractive index of atomic layer deposited HfO(2) were determined by the line scan method of the valence electron energy loss spectrum (VEELS) in a scanning transmission electron microscope (STEM). The complex dielectric functions and dielectric constant of monoclinic HfO(2) were calculated by the density functional theory (DFT) method. The resulting two dielectric functions were relatively well matched. On the other hand, the refractive index of HfO(2) was measured as 2.18 by VEELS analysis and 2.1 by DFT calculation. The electronic structure of HfO(2) was revealed by the comparison of the inter-band transition strength, obtained by STEM-VEELS, with the density of states (DOS) calculated by DFT calculation.

  6. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    NASA Astrophysics Data System (ADS)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  7. C-V Measurement of HfO2 Dielectric Layer Received by UV Stimulated Plasma Anodizing

    NASA Astrophysics Data System (ADS)

    Bibilashvili, Amiran; Kushitashvili, Zurab

    2016-10-01

    In this report we consider HfO2 dielectric layer received by UV stimulated plasma anodizing. This dielectric is distinguished by good electric parameters. For this purpose, it was used C-V characterization technic and calculate dielectric constant, flatband voltage, thrishold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument - Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer - MprobeVis System.

  8. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    NASA Astrophysics Data System (ADS)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm-2 eV-1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement.

  9. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

    PubMed Central

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-01

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS2 and an ultra-thin HfO2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS2-HfO2 interface is responsible for the generation of interface states with a density (Dit) reaching ~7.03 × 1011 cm−2 eV−1. This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in Dit could be achieved by thermally diffusing S atoms to the MoS2-HfO2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS2 devices with carrier transport enhancement. PMID:28084434

  10. Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Triyoso, D. H.; Hegde, R. I.; Zollner, S.; Ramon, M. E.; Kalpat, S.; Gregory, R.; Wang, X.-D.; Jiang, J.; Raymond, M.; Rai, R.; Werho, D.; Roan, D.; White, B. E.; Tobin, P. J.

    2005-09-01

    The impact of 8-to 45-at. % Ti on physical and electrical characteristics of atomic-layer-deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet spectroscopic ellipsometry, secondary ion mass spectroscopy, transmission electron microscopy, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and x-ray reflectometry. The role of Ti addition on the electrical performance is investigated using molybdenum (Mo)-gated capacitors. The film density decreases with increasing Ti addition. Ti addition stabilizes the amorphous phase of HfO2, resulting in amorphous films as deposited. After a high-temperature annealing, the films transition from an amorphous to a polycrystalline phase. Orthorhombic Hf-Ti-O peaks are detected in polycrystalline films containing 33-at. % or higher Ti content. As Ti content is decreased, monoclinic HfO2 becomes the predominant microstructure. No TiSi is formed at the dielectric/Si interface, indicating films with good thermal stability. The band gap of Hf-Ti-O was found to be lower than that of HfO2. Well-behaved capacitance-voltage and leakage current density-voltage characteristics were obtained for Hf-Ti-O. However, an increased leakage current density was observed with Ti addition. The data from capacitance-voltage stressing indicate a smaller flatband voltage (Vfb) shift in the HfO2 films with low Ti content when compared with the HfO2 films. This indicates less charge trapping with a small amount of Ti addition.

  11. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

    NASA Astrophysics Data System (ADS)

    Dimoulas, A.; Mavrou, G.; Vellianitis, G.; Evangelou, E.; Boukos, N.; Houssa, M.; Caymax, M.

    2005-01-01

    Thin insulator films of the high-κ dielectric HfO2 are deposited on Ge(100) substrates by evaporating Hf in atomic oxygen beams after in situ thermal desorption of the native oxide in ultrahigh vacuum and subsequent treatment of the clean Ge surface in oxygen and nitrogen. It is shown that HfO2 forms atomically sharp interfaces with Ge and behaves as an excellent insulator with dielectric permittivity κ˜25, which is close to the expected bulk value. Very low equivalent oxide thickness of 0.75 (±0.1) nm with a low gate leakage current of ˜4.5×10-4A/cm2 at 1 V in accumulation is achieved. Strong frequency dispersion of the inversion capacitance and low frequency behavior of the high frequency capacitance-voltage curves is observed. This is attributed to a combined effect of a high generation rate of minority carriers due to impurity traps and the high intrinsic carrier concentration in Ge, which result in a short minority carrier response time.

  12. Negative photoconductivity and memory effects of germanium nanocrystals embedded in HfO2 dielectric.

    PubMed

    Wang, Shiye; Liu, Weili; Zhang, Miao; Song, Zhitang; Lin, Chenglu; Dai, J Y; Lee, P F; Chan, H L W; Choy, C L

    2006-01-01

    A metal-insulator-semiconductor (MIS) structure containing an HfO2/SiO2 stack tunnel layer, isolated Germanium (Ge) nanocrystals, and an HfO2 capping layer, was obtained by an electron-beam evaporation method. A high-resolution transmission electron microscopy (HRTEM) study revealed that uniform and pronounced Ge nanocrystals had formed after annealing. Raman spectroscopy provided evidence for the formation of Ge-Ge bonds and the optimal annealing temperature for the crystallization ratio of the Ge. The electric properties of the MIS structure were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Negative photoconductivity was observed when the structure was under a forward bias, which screened the bias voltage, resulting in a decrease in the current at a given voltage and a negative shift in flat band voltage. A relatively high stored charge density of 3.27 x 10(12) cm 2 was also achieved.

  13. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    PubMed

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  14. Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

    SciTech Connect

    Gutowski, Maciej S. ); Jaffe, John E. ); Lui, Chun-Li; Stoker, Matt; Hegde, Rama I.; Rai, Raghaw S.; Tobin, Philip J.

    2002-03-18

    We present theoretical and experimental results regarding the thermodynamic stability of the high-k dielectrics MO2 (M= Zr and Hf) in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The MO2/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

  15. Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric

    NASA Astrophysics Data System (ADS)

    Wen, Ming; Xu, Jingping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

    2016-09-01

    Atomic layer deposited HfO2 annealed in different ambients (N2, O2, and NH3) is used to replace SiO2 as a gate dielectric for fabricating back-gated multilayer MoS2 transistors. Excellent electrical properties such as a mobility of 15.1 cm2/(V·s), an on/off ratio exceeding 107, and a hysteresis of 0.133 V are achieved for samples annealed in NH3 at 400 °C for 10 min. This is caused by the NH3 annealing passivation effects that reduce defective states in the HfO2 dielectric and the interface. The capacitance equivalent thickness is only 7.85 nm, which is quite small for a back-gated MoS2 transistor and is conducive to the scaling down of the device.

  16. Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 - x gate dielectrics on 4H-SiC

    NASA Astrophysics Data System (ADS)

    Jia, Ren-Xu; Dong, Lin-Peng; Niu, Ying-Xi; Li, Cheng-Zhan; Song, Qing-Wen; Tang, Xiao-Yan; Yang, Fei; Zhang, Yu-Ming

    2015-03-01

    We study a series of (HfO2)x(Al2O3)1 - x /4H-SiC MOS capacitors. It is shown that the conduction band offset of HfO2 is 0.5 eV and the conduction band offset of HfAlO is 1.11-1.72 eV. The conduction band offsets of (HfO2)x(Al2O3)1 - x are increased with the increase of the Al composition, and the (HfO2)x(Al2O3)1 - x offer acceptable barrier heights (> 1 eV) for both electrons and holes. With a higher conduction band offset, (HfO2)x(Al2O3)1 - x/4H-SiC MOS capacitors result in a ˜ 3 orders of magnitude lower gate leakage current at an effective electric field of 15 MV/cm and roughly the same effective breakdown field of ˜ 25 MV/cm compared to HfO2. Considering the tradeoff among the band gap, the band offset, and the dielectric constant, we conclude that the optimum Al2O3 concentration is about 30% for an alternative gate dielectric in 4H-SiC power MOS-based transistors. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272202 and 61234006) and the Science Project of State Grid, China (Grant No. SGRI-WD-71-14-004).

  17. Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

    PubMed Central

    Silva, J. P. B.; Faita, F. L.; Kamakshi, K.; Sekhar, K. C.; Moreira, J. Agostinho; Almeida, A.; Pereira, M.; Pasa, A. A.; Gomes, M. J. M.

    2017-01-01

    An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.

  18. Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Lai, P. T.

    2010-07-01

    The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO2/LaON or HfO2/La2O3 stacked gate dielectric (LaON or La2O3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeOx interlayer and improving the dielectric/Ge interface quality.

  19. Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

    NASA Astrophysics Data System (ADS)

    Choi, Changhwan; Lee, Jack C.

    2011-02-01

    Negative bias temperature instabilities (NBTIs) of p-channel metal-oxide-semiconductor field-effect-transistor with HfO2, HfOxNy, and HfSiON were investigated. Higher bulk trap generation (ΔNot) is mainly attributed to threshold voltage shift rather than interface trap generation (ΔNit). ΔNit, ΔNot, activation energy (Ea), and lifetime were exacerbated with incorporated nitrogen while improved with adding Si into gate dielectrics. Compared to HfO2, HfOxNy showed worse NBTI due to nitrogen pile-up at Si interface. However, adding Si into HfOxNy placed nitrogen peak profile away from Si/oxide interface and NBTI was reduced. This improvement is ascribed to reduced ΔNot and ΔNit, resulting from less nitrogen at Si interface.

  20. Freestanding HfO2 grating fabricated by fast atom beam etching

    NASA Astrophysics Data System (ADS)

    Wang, Yongjin; Wu, Tong; Kanamori, Yoshiaki; Hane, Kazuhiro

    2011-04-01

    We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector. PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

  1. Comparative Study On The Impact Of TiN And Mo Metal Gates On MOCVD-Grown HfO2 And ZrO2 High-κ Dielectrics For CMOS Technology

    NASA Astrophysics Data System (ADS)

    Abermann, S.; Sjoblom, G.; Efavi, J.; Lemme, M.; Olsson, J.; Bertagnolli, E.

    2007-04-01

    We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-κ dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.

  2. A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

    NASA Astrophysics Data System (ADS)

    Krylov, Igor; Pokroy, Boaz; Eizenberg, Moshe; Ritter, Dan

    2016-09-01

    We compare the electrical properties of HfO2/Al2O3 nano-laminates with those of the ternary HfxAlyO compound in metal oxide semiconductor (MOS) capacitors. The dielectrics were deposited by atomic layer deposition on InGaAs. Water, ozone, and oxygen plasma were tested as oxygen precursors, and best results were obtained using water. The total dielectric thickness was kept constant in our experiments. It was found that the effective dielectric constant increased and the leakage current decreased with the number of periods. Best results were obtained for the ternary compound. The effect of the sublayer thicknesses on the electrical properties of the interface was carefully investigated, as well as the role of post-metallization annealing. Possible explanations for the observed trends are provided. We conclude that the ternary HfxAlyO compound is more favorable than the nano-laminates approach for InGaAs based MOS transistor applications.

  3. Strong photoluminescence of the porous silicon with HfO2-filled microcavities

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zhengran; Du, Xianghao; Han, Zuyin; Sun, Weideng

    2015-06-01

    Greatly enhanced blue emission was observed at room temperature in the single-crystal silicon with HfO2 filled into its microcavities. The broad blue band light was emitted from both the HfO2 dielectric and the porous Si. The ferroelectricity of HfO2 enhances the blue emission from Si by its filling into the microcaivities. At the same time, HfO2 contributes to the light emission for the transitions of the defect levels for oxygen vacancy. The observation of greatly enhanced blue light emission of the porous Si filled with HfO2 dielectric is remarkable as both HfO2 and Si are highly compatible with Si-based electronic industry.

  4. Low-frequency noise in Si 0.7Ge 0.3 surface channel pMOSFETs with ALD HfO 2/Al 2O 3 gate dielectrics

    NASA Astrophysics Data System (ADS)

    von Haartman, M.; Wu, D.; Malm, B. G.; Hellström, P.-E.; Zhang, S.-L.; Östling, M.

    2004-12-01

    Low-frequency noise was characterized in Si0.7Ge0.3 surface channel pMOSFETs with ALD Al2O3/HfO2/Al2O3 stacks as gate dielectrics. The influences of surface treatment prior to ALD processing and thickness of the Al2O3 layer at the channel interface were investigated. The noise was of the 1/f type and could be modeled as a sum of a Hooge mobility fluctuation noise component and a number fluctuation noise component. Mobility fluctuation noise dominated the 1/f noise in strong inversion, but the number fluctuation noise component, mainly originating from traps in HfO2, also contributed closer to threshold and in weak inversion. The number fluctuation noise component was negligibly small in a device with a 2 nm thick Al2O3 layer at the SiGe channel interface, which reduced the average 1/f noise by a factor of two and decreased the device-to-device variations.

  5. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

    NASA Astrophysics Data System (ADS)

    Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

    2016-11-01

    Ultrathin Hf-Ti-O higher k gate dielectric films ( 2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) 9.4%, low equivalent gate oxide thickness (EOT) of 0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ( V fb - 1) V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on/ I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length ( W/ L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on, I on/ I off ratio in the magnitude of 105, and peak transconductance, as well as suitable threshold voltage (-0.3 -0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/ V and subthreshold swing <70 mV/decade.

  6. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    PubMed Central

    2011-01-01

    Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea PMID:21711946

  7. Thermal stability of HfO2 nanotube arrays

    SciTech Connect

    Qiu, Xiaofeng; Howe, Jane Y; Meyer III, Harry M; Tuncer, Enis; Paranthaman, Mariappan Parans

    2010-01-01

    Thermal stability of highly ordered hafnium oxide (HfO2) nanotube arrays prepared through an electrochemical anodization method in the presence of ammonium fluoride is investigated in a temperature range of room temperature to 900 C in flowing argon atmosphere. The formation of the HfO2 nanotube arrays was monitored by current density transient characteristics during anodization of hafnium metal foil. Morphologies of the as-grown and post-annealed HfO2 nanotube arrays were analyzed by powder Xray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although monoclinic HfO2 is thermally stable up to 2000K in bulk, the morphology of HfO2 nanotube arrays degraded at 900 C. A detailed X-ray photoelectron spectroscopy (XPS) study revealed that the thermal treatment significantly impacted the composition and the chemical environment of the core elements (Hf and O), as well as F content coming from the electrolyte. Possible reasons for the degradation of the nanotube at high temperature were discussed based on XPS study and possible future improvements have also been suggested. Moreover, dielectric measurements were carried out on both the as-grown amorphous film and 500 C post-annealed crystalline film. This study will help us to understand the temperature impact on the morphology of nanotube arrays, which is important to its further applications at elevated temperatures.

  8. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    PubMed Central

    2011-01-01

    Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS) memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices. PMID:21711708

  9. Structure and dielectric properties of amorphous high-κ oxides: HfO2, ZrO2, and their alloys

    NASA Astrophysics Data System (ADS)

    Wang, Yin; Zahid, Ferdows; Wang, Jian; Guo, Hong

    2012-06-01

    High-κ metal oxides are a class of materials playing an increasingly important role in modern device physics and technology. Here we report theoretical investigations of the properties of structural and lattice dielectric constants of bulk amorphous metal oxides by a combined approach of classical molecular dynamics (MD), for structure evolution, and quantum mechanical first-principles density function theory (DFT), for electronic structure analysis. Using classical MD based on the Born-Mayer-Buckingham potential function within a melt and quench scheme, amorphous structures of high-κ metal oxides Hf1-xZrxO2 with different values of the concentration x are generated. The coordination numbers and the radial distribution functions of the structures are in good agreement with the corresponding experimental data. We then calculate the lattice dielectric constants of the materials from quantum mechanical first principles, and the values averaged over an ensemble of samples agree well with the available experimental data and are very close to the dielectric constants of their cubic form.

  10. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

    PubMed

    Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

    2016-12-01

    Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm(2) @ (V fb - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on/I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on, I on/I off ratio in the magnitude of 10(5), and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

  11. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    NASA Astrophysics Data System (ADS)

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dongkyu; Zhang, Xi-Xiang; Pey, Kin-Leong

    2011-08-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectric resistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy (EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  12. Interface and bulk properties of HfO2 films

    NASA Astrophysics Data System (ADS)

    Biswas, Nivedita; Harris, Harlan; Choi, Kisik; Temkin, Henryk; Gangopadhyay, Shubhra

    2003-03-01

    HfO2 films of varying thickness were deposited on silicon and titanium by reactive electron beam evaporation. Metal gates of Titanium were deposited to form MIS and MIM structures. Capacitance-voltage and conductance-voltage measurements were performed to analyze the HfO2/Si interface and HfO2 bulk. For samples having thickness between 30 and 300 Å the C-V curves of the as-deposited samples were marked by charge leakage, huge hysteresis and frequency dispersion. However, annealing the sample in H2 ambient reduced charge leakage, hysteresis and the frequency dispersion of the C-V curves. A dielectric constant of the annealed films was calculated to be 17. The interface state density as calculated using the method of Nicollian and Brews was 2-3E10 cm-2eV-1 close to the midgap. To study the bulk properties, HfO2 films of thickness 2100 Å with platinum electrodes were deposited on silicon and titanium nitride. The C-V and G-V curves of both as-deposited and annealed samples were measured. Interface state density was found to be comparable to that of the thin samples. Thus the passivation of bulk and interface states with hydrogen annealing is independent of thickness. The gap state densities were found compatible with the observed hysteresis of the as-deposited ( 1E16-1E17 eV-1cm-3) and annealed sample (1E14-1E15eV-1cm-3).

  13. Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

    2016-11-01

    Different high-permittivity (high-k) gate dielectric structures of HfO2, HfAlO, and HfO2/Al2O3 deposited on HF-etched n-GaAs using ALD have been investigated. It has been demonstrated that the stacked structure of HfO2/Al2O3 has the lowest interface state density of 8.12 × 1012eV-1 cm-2 due to the "self-cleaning" reaction process, but the sample of HfAlO shows much better frequency dispersion and much higher dielectric permittivity extracted from the C-V curves. The investigation reveals that the electrical properties of gate dielectrics are improved by introducing alumina into HfO2.

  14. Charge trapping properties of the HfO2 layer with various thicknesses for charge trap flash memory applications

    NASA Astrophysics Data System (ADS)

    You, Hee-Wook; Cho, Won-Ju

    2010-03-01

    MHOS (metal-HfO2-SiO2-Si) structure capacitors were fabricated to investigate the charge trapping properties of HfO2 layer with various thicknesses for the applications of charge trap flash (CTF) memory devices. Also, the centroid of charge trap in HfO2 layer was extracted by constant current stress method and compared with that of conventional Si3N4 layer. The gate leakage current of MHOS capacitor due to tunneling was significantly reduced by stacking the HfO2 trap layer on thin SiO2 tunnel layer. The MHOS capacitors showed a larger memory window than the MNOS (metal-Si3N4-SiO2-Si) capacitors at the same trap layer thickness, because the HfO2 layer has better charge trapping efficiency than the Si3N4 layer. It is found that ultrathin HfO2 trap layer with a thickness of 2 nm stored almost the same charges with Si3N4 layer with a thickness of 7 nm. Consequently, the application of ultrathin HfO2 to charge storage layer can considerably improve the performance and enhance the high density of CTF memory.

  15. Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

    NASA Astrophysics Data System (ADS)

    Jeong, Seong-Jun; Kim, Hyo Won; Heo, Jinseong; Lee, Min-Hyun; Song, Hyun Jae; Ku, JiYeon; Lee, Yunseong; Cho, Yeonchoo; Jeon, Woojin; Suh, Hwansoo; Hwang, Sungwoo; Park, Seongjun

    2016-09-01

    Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3 films can be synthesised on graphene by pALD. The mechanism underlying the pALD process is identified through first-principles calculations based on density functional theory. Further, this novel deposition technique is used to fabricate two types of wafer-scale devices. It is found that the incorporation of a 5 nm-thick pALD Al2O3 gate dielectric film improves the performance of metal-oxide-graphene field-effect transistors to a greater extent than does the incorporation of a conventional ALD Al2O3 film. We also employ a 5 nm-thick pALD HfO2 film as a highly scalable dielectric layer with a capacitance equivalent oxide thickness of 1 nm in graphene-based tunnelling field-effect transistors fabricated on a glass wafer and achieve a subthreshold swing of 30 mV/dec. This significant improvement in switching allows for the low-voltage operation of an inverter within 0.5 V of both the drain and the gate voltages, thus paving the way for low-power electronics.

  16. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric

    PubMed Central

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-01-01

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm2V−1s−1 coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering. PMID:27222074

  17. Interface Engineering for the Enhancement of Carrier Transport in Black Phosphorus Transistor with Ultra-Thin High-k Gate Dielectric.

    PubMed

    Ling, Zhi-Peng; Zhu, Jun-Tao; Liu, Xinke; Ang, Kah-Wee

    2016-05-25

    Black phosphorus (BP) is the most stable allotrope of phosphorus which exhibits strong in-plane anisotropic charge transport. Discovering its interface properties between BP and high-k gate dielectric is fundamentally important for enhancing the carrier mobility and electrostatics control. Here, we investigate the impact of interface engineering on the transport properties of BP transistors with an ultra-thin hafnium-dioxide (HfO2) gate dielectric of ~3.4 nm. A high hole mobility of ~536 cm(2)V(-1)s(-1) coupled with a near ideal subthreshold swing (SS) of ~66 mV/dec were simultaneously achieved at room temperature by improving the BP/HfO2 interface quality through thermal treatment. This is attributed to the passivation of phosphorus dangling bonds by hafnium (Hf) adatoms which produces a more chemically stable interface, as evidenced by the significant reduction in interface states density. Additionally, we found that an excessively high thermal treatment temperature (beyond 200 °C) could detrimentally modify the BP crystal structure, which results in channel resistance and mobility degradation due to charge-impurities scattering and lattice displacement. This study contributes to an insight for the development of high performance BP-based transistors through interface engineering.

  18. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

    2013-10-01

    Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

  19. Perpendicular magnetic anisotropy of Co/Pt bilayers on ALD HfO2

    NASA Astrophysics Data System (ADS)

    Vermeulen, Bart F.; Wu, Jackson; Swerts, Johan; Couet, Sebastien; Linten, Dimitri; Radu, Iuliana P.; Temst, Kristiaan; Rampelberg, Geert; Detavernier, Christophe; Groeseneken, Guido; Martens, Koen

    2016-10-01

    Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-κ dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2/Co/Pt/Ru stack in N2 with the Keff of 0.25 mJ/m2 as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co/Pt bilayer. High-κ dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies.

  20. High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties

    NASA Astrophysics Data System (ADS)

    Toledano-Luque, M.; San Andrés, E.; del Prado, A.; Mártil, I.; Lucía, M. L.; González-Díaz, G.; Martínez, F. L.; Bohne, W.; Röhrich, J.; Strub, E.

    2007-08-01

    Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were investigated using heavy ion elastic recoil detection analysis, Fourier transform infrared spectroscopy, ultraviolet-visible-near infrared spectroscopy, x-ray diffraction, and transmission electron microscopy. The films showed a monoclinic polycrystalline structure, with a grain size depending on the deposition pressure. All films were slightly oxygen rich with respect to stoichiometric HfO2 and presented a significant amount of hydrogen (up to 6at.%), which is attributed to the high affinity for moisture of the HfO2 films. The absorption coefficient was fitted to the Tauc law, obtaining a band gap value of 5.54eV. It was found that the growth rate of the HfO2 films depends on the deposition pressure (P ) as P-1.75. This dependence is explained by a diffusion model of the thermalized atoms in high-pressure sputtering. Additionally, the formation of an interfacial silicon oxide layer when the films were grown on silicon was observed, with a minimum thickness for deposition pressures around 1.2mbars. This interfacial layer was formed mainly during the initial stages of the deposition process, with only a slight increase in thickness afterwards. These results are explained by the oxidizing action of the oxygen plasma and the diffusion of oxygen radicals and hydroxyl groups through the polycrystalline HfO2 film. Finally, the dielectric properties of the HfO2/SiO2 stacks were studied by means of conductance and capacitance measurements on Al /HfO2/SiO2/Si devices as a function of gate voltage and ac frequency signal.

  1. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  2. Epitaxial Thin Films of Y doped HfO2

    NASA Astrophysics Data System (ADS)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  3. Total absorption in ultra-thin lossy layer on transparent substrate using dielectric resonance structure

    NASA Astrophysics Data System (ADS)

    Matsui, T.; Iizuka, H.

    2017-03-01

    A resonant sub-wavelength structure made of a high-refractive-index dielectric material exhibits a resonator-like response and provides unity reflection. We show that near-unity absorption is obtained by using a sub-wavelength resonant structure, which consists of periodic high-refractive-index nano-blocks, when an ultra-thin absorption layer is attached to a transparent dielectric substrate. The resonant structure does not necessarily touch the absorption layer and, therefore, a coating film can be inserted between the absorption layer and the periodic structure. Our results significantly extend application scenarios of detectors and optoelectronic devices that can be implemented on transparent dielectric substrates.

  4. Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

    PubMed

    Zettler, Johannes K; Corfdir, Pierre; Hauswald, Christian; Luna, Esperanza; Jahn, Uwe; Flissikowski, Timur; Schmidt, Emanuel; Ronning, Carsten; Trampert, Achim; Geelhaar, Lutz; Grahn, Holger T; Brandt, Oliver; Fernández-Garrido, Sergio

    2016-02-10

    The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which gives rises to much stronger enhancement, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.

  5. Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects

    NASA Astrophysics Data System (ADS)

    Umezawa, Naoto

    2010-04-01

    Electrical properties of field-effect transistors are significantly degraded by charged defects formed in dielectric oxides. Here, we propose a simple method for eliminating charged defects in HfO2. Our computational and thermodynamic investigations have revealed that multivalent oxides act as an oxygen reservoir when deposited on HfO2, playing an important role in keeping the oxygen chemical potential constant throughout the oxide film. This is due to the coexistence of two stoichiometric phases in the multivalent oxide, which allows absorption or desorption of oxygen atoms depending on the ambient conditions. Our theory predicts europium oxide is the best capping material for minimizing oxygen-related charged defects in HfO2.

  6. The effect of Gd doping on the atomic and electronic structure of HfO2 thin films.

    NASA Astrophysics Data System (ADS)

    Ketsman, Ihor; Sokolov, Andrei; Belashchenko, Kirill; Dowben, Peter; Losovyj, Yaroslav; Tang, Jinke; Wang, Zhenjun

    2008-03-01

    HfO2 is a promising oxide for many applications, including high-k gate dielectric for CMOS devices. In addition, Gd-doped HfO2 could lead to a dilute magnetic semiconductor and provide an efficient neutron detection medium due to huge neutron absorption cross section of Gd. Gd-doped HfO2 films deposited on both p-type and n-type silicon by PLD retain monoclinic phase at small doping levels, but can be stabilized in fluorite phase by increased doping [1]. At small doping levels, photoemission measurements indicate n-type character of the films as a result of overcompensation with oxygen vacancies. Depending on a doping level, the films form heterojunctions with good rectifying properties on n- or p-type silicon. Preliminary results show the potential ability of the formed diode structures to detect neutrons. [1] Ya.B.Losovyj, I.Ketsman et al.,APL, 91, 132908, (2007)

  7. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    NASA Astrophysics Data System (ADS)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  8. Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

    NASA Astrophysics Data System (ADS)

    Tan, Zerlinda; Samanta, S. K.; Yoo, Won Jong; Lee, Sungjoo

    2005-01-01

    We demonstrate memory property using Ni nanocrystals with mean diameter of 9nm embedded in HfO2 high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5nm HfO2 after high temperature annealing above 800°C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5V sweep during capacitance-voltage electrical measurement.

  9. Hetero-epitaxial growth of the cubic single crystalline HfO 2 film as high k materials by pulsed laser ablation

    NASA Astrophysics Data System (ADS)

    Zhang, Xinqiang; Tu, Hailing; Wang, Xiaona; Xiong, Yuhua; Yang, Mengmeng; Wang, Lei; Du, Jun

    2010-10-01

    We report a hetero-epitaxial growth of cubic single crystalline HfO 2 film on Si substrates as high k materials by pulse laser ablation (PLA) at 820 °C. To eliminate the interfacial defects, the HfO 2 film has then been annealed at 900 °C for 5 min in N 2. Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO 2 film on Si substrates corresponding to (∥( and [∥[. An interface layer has been revealed by high-resolution transmission electron microscope (HRTEM). Through capacitance-voltage ( C- V) and current-voltage ( I- V), it has been obtained that the leakage current of the HfO 2 gate insulator with dielectric constant of 26 is 5×10 -6 A/cm 2 at -1 V.

  10. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    NASA Astrophysics Data System (ADS)

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-02-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer.

  11. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    PubMed Central

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

  12. Crystal structure of Si-doped HfO2

    NASA Astrophysics Data System (ADS)

    Zhao, Lili; Nelson, Matthew; Aldridge, Henry; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.

    2014-01-01

    Si-doped HfO2 was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO2 was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO2) rather than HfSiO4, the latter of which would be expected from existing SiO2-HfO2 phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO2 shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  13. Cross linking molecular systems to form ultrathin dielectric layers

    NASA Astrophysics Data System (ADS)

    Feng, Danqin

    Dehydrogenation leads to cross linking of polymer or polymer like formation in very different systems: self-assembled monolayers and in closo -carboranes leading to the formation of semiconducting and dielectric boron carbide. We find evidence of intermolecular interactions for a self-assembled monolayer (SAM) formed from a large molecular adsorbate, [1,1';4',1"-terphenyl]-4,4"-dimethanethiol, from the dispersion of the molecular orbitals with changing the wave vector k and from the changes with temperature. With the formation self assembled molecular (SAM) layer, the molecular orbitals hybridize to electronic bands, with indications of significant band dispersion of the unoccupied molecular orbitals. Although organic adsorbates and thin films are generally regarded as "soft" materials, the effective Debye temperature, indicative of the dynamic motion of the lattice normal to the surface, can be very high, e.g. in the multilayer film formed from [1,1'-biphenyl]-4,4'-dimethanethiol (BPDMT). Depending on molecular orientation, the effective Debye temperature can be comparable to that of graphite due to the 'stiffness' of the benzene rings, but follows the expected Debye-Waller behavior for the core level photoemission intensities with temperature. This is not always the case. We find that a monomolecular film formed from [1,1';4',1"-terphenyl]-4,4"-dimethanethiol deviates from Debye-Waller temperature behavior and is likely caused by temperature dependent changes in molecular orientation. We also find evidence for the increase in dielectric character with polymerization (cross-linking) in spite of the decrease in the HOMO-LUMO gap upon irradiation of TPDMT. The changes in the HOMO-LUMO gap, with cross-linking, are roughly consistent with the band dispersion. The decomposition and cross-linking processes are also accompanied by changes in molecular orientation. The energetics of the three isomeric carborane cage compounds [ closo-1,2-orthocarborane, closo-1

  14. Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

    NASA Astrophysics Data System (ADS)

    Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.

    2007-03-01

    In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5V, the memory window was estimated to ˜1V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 106 write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

  15. Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces

    NASA Astrophysics Data System (ADS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-04-01

    Electrical dipole at SiO2/Si and HfO2/SiO2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO2/Si and HfO2/SiO2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO2 and a HfO2/SiO2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance–voltage (C–V) characteristics. Comparing the results of XPS and C–V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements.

  16. A small shoulder of optical absorption in polycrystalline HfO2 by LDA+U approach

    NASA Astrophysics Data System (ADS)

    Qin, Liyuan; Li, Jinping; Meng, Songhe; Lu, Hantao; Tohyama, Takami

    2016-10-01

    The dielectric function of the wide-gap optical material HfO2 is investigated by the local density approximation (LDA)+U approach. We focus on the origin of the shoulder-like structure near the edge of the band gap in the imaginary part of the dielectric function, which has been observed on the thin films of monoclinic HfO2. A comparison study on the three polymorphs of hafnia shows that regardless of the underlying crystal structure, the existence of the shoulder is mainly controlled by the value of the shortest length of Hf-O bonds. The proposition is further supported by the numerical simulations of isostatic pressing. A possible implication in high-pressure measurements is suggested accordingly.

  17. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2 Atomic Layer Deposition.

    PubMed

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al2O3, TiO2, ZnO, HfO2, and ZrO2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al2O3 or HfO2 provided the highest level of initial corrosion protection, but films of HfO2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO2 or ZrO2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  18. Ferroelectricity in Simple Binary ZrO2 and HfO2.

    PubMed

    Müller, Johannes; Böscke, Tim S; Schröder, Uwe; Mueller, Stefan; Bräuhaus, Dennis; Böttger, Ulrich; Frey, Lothar; Mikolajick, Thomas

    2012-08-08

    The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO(2) thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO(2)-ZrO(2) mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.

  19. Electron beam induced local crystallization of HfO2 nanopores for biosensing applications

    NASA Astrophysics Data System (ADS)

    Shim, Jiwook; Rivera, Jose A.; Bashir, Rashid

    2013-10-01

    We report the development of single, locally crystallized nanopores in HfO2 membranes for biosensing applications. HfO2 is chosen for its isoelectric point of 7.0, mechanical and chemical stability in solution, and for its potential as a high-k material for nanopore ionic field effect transistor applications. The HfO2 membrane is deposited on a graphene layer suspended over a 300 nm FIB hole, where graphene is used as the mechanical support. Exposure of the membrane to a focused electron beam causes crystallization in the vicinity of the nanopore during pore formation. We investigate the effects of crystallization on the electrical and surface properties of HfO2 films. Our surface analysis of HfO2 reveals improved hydrophilicity of crystallized HfO2, a notable advantage over the hydrophobicity of as-deposited HfO2. We also demonstrate detection of dsDNA translocation through HfO2 nanopores under various applied bias levels. In addition, our device architecture also presents a promising first step toward the realization of high-k HfO2 nanopore transistors.We report the development of single, locally crystallized nanopores in HfO2 membranes for biosensing applications. HfO2 is chosen for its isoelectric point of 7.0, mechanical and chemical stability in solution, and for its potential as a high-k material for nanopore ionic field effect transistor applications. The HfO2 membrane is deposited on a graphene layer suspended over a 300 nm FIB hole, where graphene is used as the mechanical support. Exposure of the membrane to a focused electron beam causes crystallization in the vicinity of the nanopore during pore formation. We investigate the effects of crystallization on the electrical and surface properties of HfO2 films. Our surface analysis of HfO2 reveals improved hydrophilicity of crystallized HfO2, a notable advantage over the hydrophobicity of as-deposited HfO2. We also demonstrate detection of dsDNA translocation through HfO2 nanopores under various applied bias levels. In addition, our device architecture also presents a promising first step toward the realization of high-k HfO2 nanopore transistors. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02608f

  20. Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2017-01-01

    Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low-k). To supplement low-k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high-k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high-k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3.

  1. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of different stacks of films.

  2. Multiple spectrum analysis and evaluation for optical constants of HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Liu, Dandan; Liu, Huasong; Jiang, Chenghui; Jiang, Yugang; Wang, Lishuan; Zhao, Zhihong; Ji, Yiqin

    2014-08-01

    HfO2 thin films were deposited on ZS1 silica by Ion Beam Sputtering (IBS) technique. Optical constants of HfO2 thin films were obtained by multiple spectrum analysis method, which combined the transmittance spectrum and ellipsometry spectrum of the film. The refractive index and extinction coiefficient of HfO2 thin films were evaluated by etching experiments of the film. The analysis spectral range was between 250nm and 850nm.

  3. Topology dependent electronic and dielectric properties of free standing alloyed ultrathin nanowires of noble metals

    NASA Astrophysics Data System (ADS)

    Kumar, Arun; Kumar, Ashok; Ahluwalia, P. K.

    2014-08-01

    Structural, electronic and dielectric properties of free standing ultrathin alloyed nanowires of noble metals (AgAu, AgCu, AgPt, AuCu, AuPt and CuPt) in various topologies (linear, ladder and double zigzag) have been studied by using ab initio density functional theory. Among the different topologies of alloyed ultrathin nanowires of noble metals, double zigzag (DZZ) topology has been found to be most stable and the linear topology the least stable. Also the binding energy of alloyed nanowires of AgAu and AuCu for all the studied topologies is found to be larger than the average binding energy of the corresponding pristine nanowires, indicating a strong alloying effect for these topologies. Among electronic properties, the alloyed nanowires of different topologies containing Pt (AgPt, AuPt and AuCu) are found to be ferromagnetic in nature, a result of d charge depletion in Ag, Au and Cu sites and d charge gain at Pt sites. On the other hand, all the topologies (except ladder topology) of alloyed nanowires viz. AgAu, AgCu and AuCu are found to be semiconducting in nature. The optical properties of the studied alloyed nanowires have been found to be different from their corresponding pristine nanowires due to change in the band structure on alloying. The linear topology of AgAu, AgCu and AuCu and DZZ topologies (DZZ1, DZZ2 and DZZ3) of Ag, Au, Cu, AgAu, AgCu and AuCu are semiconducting in nature with band gap lying in the infrared region, causing absorption of photons from a visible spectrum leading to blackish appearance. Whereas, remaining topologies are found to be metallic in nature, with plasmon frequency lying in the energy range of 0.35 eV to 1.62 eV, which is in the infrared region and hence these nanowires shall appear to be transparent to the visible region.

  4. Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

    NASA Astrophysics Data System (ADS)

    Kim, Kyung-Min; Choi, Byung Joon; Kim, Seong Keun; Hwang, Cheol Seong

    2004-11-01

    Capacitive tip arrays having a metal-insulator-semiconductor capacitor structure were fabricated using thermally oxidized SiO2 or atomic-layer-deposited HfO2 gate dielectric films for their application to scanning-probe-array-type memory devices. The SiO2 film showed a nonuniform thickness distribution over the flat and tip areas of the arrays owing to the different oxidation speeds of the flat and tip Si surfaces. This resulted in a smaller sensing margin of the device. However, the high-dielectric HfO2 film showed not only a higher capacitance value but also a more uniform growth behavior over the whole area, which would result in a better device performance. The capacitance-voltage characteristics of both devices coincide well with the simulation results based on conventional metal-insulator-semiconductor theories.

  5. Vacuum ultraviolet thin films. I - Optical constants of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 thin films. II - Vacuum ultraviolet all-dielectric narrowband filters

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Spann, James F.; Torr, Marsha R.

    1990-01-01

    An iteration process matching calculated and measured reflectance and transmittance values in the 120-230 nm VUV region is presently used to ascertain the optical constants of bulk MgF2, as well as films of BaF2, CaF2, LaF3, MgF2, Al2O3, HfO2, and SiO2 deposited on MgF2 substrates. In the second part of this work, a design concept is demonstrated for two filters, employing rapidly changing extinction coefficients, centered at 135 nm for BaF2 and 141 nm for SiO2. These filters are shown to yield excellent narrowband spectral performance in combination with narrowband reflection filters.

  6. Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

    PubMed

    Wang, Lin; Chen, Xiaolong; Wang, Yang; Wu, Zefei; Li, Wei; Han, Yu; Zhang, Mingwei; He, Yuheng; Zhu, Chao; Fung, Kwok Kwong; Wang, Ning

    2013-02-07

    We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers.

  7. Inelastic electron tunneling spectroscopy study of ultrathin Al2O3-TiO2 dielectric stack on Si

    NASA Astrophysics Data System (ADS)

    Liu, Zuoguang; Cui, Sharon; Kornblum, Lior; Eizenberg, Moshe; Chang, Ming-Feng; Ma, T. P.

    2010-11-01

    We report the properties of an ultrathin Al2O3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

  8. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

    PubMed

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2/floating gate of single layer of Ge QDs in HfO 2/tunnel HfO 2/p-Si wafers. Both Ge and HfO2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10(15) m(-2) is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO2 NCs boundaries, while another part of the Ge atoms is present inside the HfO2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO2, distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  9. Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

    NASA Astrophysics Data System (ADS)

    Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

    2015-11-01

    We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

  10. Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites

    PubMed Central

    Galeckas, Augustinas; Salumaa, Martin; Ducroquet, Frédérique; Rauwel, Erwan

    2016-01-01

    Summary A hybrid material consisting of nonfunctionalized multiwall carbon nanotubes (MWCNTs) and cubic-phase HfO2 nanoparticles (NPs) with an average diameter of 2.6 nm has been synthesized. Free standing HfO2 NPs present unusual optical properties and a strong photoluminescence emission in the visible region, originating from surface defects. Transmission electron microscopy studies show that these NPs decorate the MWCNTs on topological defect sites. The electronic structure of the C K-edge in the nanocomposites was probed by electron energy loss spectroscopy, highlighting the key role of the MWCNT growth defects in anchoring HfO2 NPs. A combined optical emission and absorption spectroscopy approach illustrated that, in contrast to HfO2 NPs, the metallic MWCNTs do not emit light but instead expose their discrete electronic structure in the absorption spectra. The hybrid material manifests characteristic absorption features with a gradual merger of the MWCNT π-plasmon resonance band with the intrinsic defect band and fundamental edge of HfO2. The photoluminescence of the nanocomposites indicates features attributed to combined effects of charge desaturation of HfO2 surface states and charge transfer to the MWCNTs with an overall reduction of radiative recombination. Finally, photocurrent generation under UV–vis illumination suggests that a HfO2 NP/MWCNT hybrid system can be used as a flexible nanodevice for light harvesting applications. PMID:27547626

  11. Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

    NASA Astrophysics Data System (ADS)

    Miyata, Noriyuki; Yasuda, Tetsuji; Abe, Yasuhiro

    2010-05-01

    Securing the thermal robustness of thin hafnium oxide (HfO2) film on the semiconductor surface is an important technical issue in the fabrication of the metal-oxide-semiconductor field-effect transistor devices, as the HfO2-based high-k gate stacks usually undergo high-temperature processes. In this study, the structural development of thin HfO2 film on a Ge surface during postdeposition annealing in an ultrahigh vacuum was examined to explore the origin for the initial degradation of thin HfO2 film. Void nucleation and subsequent two-dimensional void growth take place at 780-840 °C, while the chemical composition of the remaining Hf oxide is virtually stable. Both the void nucleation and growth processes show similar larger activation energy of about 10 eV. Based on the observed manner of void growth and the estimated activation energies, the authors propose that mass transport on the HfO2 surface is responsible for void nucleation in the HfO2 films on Ge. The authors also compare the present results with the previous studies on HfO2/Si structures, and suggest that similar surface process leads to the local Hf silicidation.

  12. Accurate prediction of band gaps and optical properties of HfO2

    NASA Astrophysics Data System (ADS)

    Ondračka, Pavel; Holec, David; Nečas, David; Zajíčková, Lenka

    2016-10-01

    We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran-Blaha modified Becke-Johnson potential (TB-mBJ) for exchange and local density approximation for correlation. Unit cells of monoclinic, cubic and tetragonal crystalline, and a simulated annealing-based model of amorphous hafnia were fully relaxed with respect to internal positions and lattice parameters. Electronic structures and band gaps for monoclinic, cubic, tetragonal and amorphous hafnia were calculated using three different TB-mBJ parametrisations and the results were critically compared with the available experimental and theoretical reports. Conceptual differences between a straightforward comparison of experimental measurements to a calculated band gap on the one hand and to a whole electronic structure (density of electronic states) on the other hand, were pointed out, suggesting the latter should be used whenever possible. Finally, dielectric functions were calculated at two levels, using the random phase approximation without local field effects and with a more accurate Bethe-Salpether equation (BSE) to account for excitonic effects. We conclude that a satisfactory agreement with experimental data for HfO2 was obtained only in the latter case.

  13. Ferroelectric phase stabilization of HfO2 by nitrogen doping

    NASA Astrophysics Data System (ADS)

    Xu, Lun; Nishimura, Tomonori; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-09-01

    We report that nitrogen (N) doping can drive the ferroelectricity of HfO2. It was found that N doping can cause the transition from a monoclinic phase to a highly symmetric phase. The role of N doping is discussed from the viewpoints of charge balance and bond-constraining effects. The former is responsible for the structural transformation from a paraelectric phase to a ferroelectric phase by forming an oxygen vacancy. In addition, Hf-N and N-O bonds with covalent characteristics have strong effects on HfO2 structural and electrical properties, and thus contribute to a marked HfO2 para-/ferroelectric transition.

  14. Nanometer-scale crystallization of thin HfO2 films studied by HF-chemical etching

    NASA Astrophysics Data System (ADS)

    Fujii, Shinji; Miyata, Noriyuki; Migita, Shinji; Horikawa, Tsuyoshi; Toriumi, Akira

    2005-05-01

    We used a HF-chemical etching process to examine crystalline structures in thin HfO2 films grown by metal organic chemical vapor deposition at 350-550°C. Nanometer-scale crystalline HfO2 nuclei were identified from all the HfO2 films. The nucleus density exponentially increased with increasing deposition temperature, but the diameter of the nuclei did not depend on the deposition temperature. We propose that the crystallization of thin HfO2 film during growth proceeds in a patchwork process with the increase of the crystalline HfO2 nuclei.

  15. Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si

    NASA Astrophysics Data System (ADS)

    Suzuki, Kazuyuki; Kato, Kazumi

    2007-10-01

    Ferroelectric/insulator/silicon structures were prepared using (Y,Yb)MnO3 films as ferroelectrics and HfO2 thin films as insulators through alkoxy-derived precursor solutions. The HfO2 solution was chemically modified in order to decrease the number of heating cycles required. The HfO2 films prepared using a partially hydrolyzed alkoxide solution had a uniform structure. From the results of measurements of the roughness level and refractive index of the HfO2 films, the partial hydrolysis of the HfO2 solution was found to be effective for the formation of a uniform microstructure in a thin insulator film. (Y,Yb)MnO3/HfO2/Si structures were constructed using the resultant HfO2 thin films prepared using the modified solutions.

  16. Characterization of local dielectric breakdown in ultrathin SiO2 films using scanning tunneling microscopy and spectroscopy

    NASA Astrophysics Data System (ADS)

    Watanabe, Heiji; Baba, Toshio; Ichikawa, Masakazu

    1999-05-01

    Local dielectric breakdown of ultrathin SiO2 films grown on silicon substrates has been investigated by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We found that STM observation can reveal individual quasibreakdown spots created by hot-electron injection into the oxide, as well as features of the topography such as atomic steps on the oxide surface. STS was used to study the local electrical properties of the oxide films before and after electrical stressing. We observed a leakage current at the quasibreakdown spots that passed through defect levels in the ultrathin oxide films. We also found that several tunneling spectra obtained from near leakage sites showed clear negative differential resistance. This phenomenon was attributed to the conductance change in the leakage path due to electron charging effects. Moreover, we confirmed the stressing polarity dependence of the leakage-site creation, and that atomic steps on the oxide and at the SiO2/Si interface did not cause any serous problem in the quasibreakdown process.

  17. Interfacial SiO2 scavenging kinetics in HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Li, Xiuyan; Nishimura, Tomonori; Toriumi, Akira

    2016-11-01

    In this paper, Si and oxygen diffusions as well as SiO2 reduction reaction in HfO2/SiO2/Si stacks are examined in detail for fully understanding the SiO2-IL scavenging process. A 29Si isotope tracing experiment confirms that Si in SiO2-IL is mostly emitted from the HfO2 surface. In addition, the reaction of oxygen from SiO2 with VO in HfO2 is suggested. Furthermore, it is reported that the Si substrate is not changed at all in the SiO2-IL scavenging by simultaneously comparing a Si surface between with and without scavenged parts. Based on these results, a kinetic model for the SiO2-IL scavenging in HfO2/SiO2/Si stacks is proposed.

  18. Microstructure dependent filament forming kinetics in HfO2 programmable metallization cells

    NASA Astrophysics Data System (ADS)

    Clarke, Heidi; Brown, Timothy; Hu, Jianjun; Ganguli, Raj; Reed, Amber; Voevodin, Andrey; Shamberger, Patrick J.

    2016-10-01

    Variability remains the principal concern for commercialization of HfO2 based resistance switching devices. Here, we investigate the role of thermal processing conditions on internal structure of atomic layer deposited HfO2 thin films, and the impact of that structure on filament forming kinetics of p+ Si/HfO2/Cu and TiN/HfO2/Cu devices. Regardless of bias polarity or electrode metal, filament formation times are at least one order of magnitude shorter in polycrystalline than in amorphous films, which we attribute to the presence of fast ion migration along grain boundaries. Within polycrystalline films, filament formation times are correlated with degree of crystalline orientation. Inter-device variability in forming time is roughly equivalent across HfO2 film processing conditions. The kinetics of filament forming are shown to be highly dependent on HfO2 microstructure, with possible implications for the inter-device variability of subsequent switching cycles.

  19. Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

    NASA Astrophysics Data System (ADS)

    Piallat, Fabien; Beugin, Virginie; Gassilloud, Remy; Dussault, Laurent; Pelissier, Bernard; Leroux, Charles; Caubet, Pierre; Vallée, Christophe

    2014-06-01

    Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO2 was studied by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the interface and connect them with C-V electrical characteristics of MOS devices. Moreover, angular resolved XPS (AR-XPS) was used for composition depth profiling of TaCN/HfO2/SiO2/Si stacks. Clear oxidation of the metal electrode through Tasbnd O bonding formation and migration of N in the dielectric with Hfsbnd N are shown. These modifications of chemical bonding give an insight on the electrical results. Low equivalent oxide thicknesses (EOT), as low as 0.89 nm and current leakage improvement by more than 5 decades, are observed for deposition with low plasma power and can be related to HfN content in HfO2 layer. The increase of plasma power used for TaCN deposition results in densification of the layer and promotes the creation of TaC in TaCN material. However H2 plasma has an impact on HfO2 with a reduction and scattering of the measured current leak gain. TaCN/HfO2 interface is also impacted with further creation of TaOx, leading to an increase of EOT when plasma power is increased. Based on these findings, reaction mechanisms with the corresponding Gibbs free energy are proposed.

  20. Electronic Structure Differences in ZrO2 vs. HfO2

    SciTech Connect

    Zheng, Weijun; Bowen Jr., K.H.; Li, Jun; Dabkowska, Iwona; Gutowski, Maciej S.

    2005-12-22

    While ZrO2 and HfO2 are, for the most part, quite similar chemically, subtle differences in their electronic structures appear to be responsible for differing MO2/Si (M = Zr, Hf) interface stabilities. In order to shed light on the electronic structure differences between ZrO2 and HfO2, we have conducted joint experimental/theoretical studies. Since electron affinities are a sensitive probe of electronic structure, we have measured them by conducting photoelectron spectroscopic experiments on ZrO2- and HfO2-. The electron affinity of HfO2 was determined to be 2.14? 0.03 eV, while that of ZrO2 was determined to be 1.64 ? 0.03 eV. Concurrently, electronic structure calculations were conducted to determine electron affinities, vibrational frequencies, and geometries of these systems. The calculated electron affinities of HfO2 and ZrO2 were found to be 2.05 and 1.62 eV, respectively. The molecular results confirm earlier predictions from solid phases that HfO2 is more ionic than ZrO2. The excess electron in MO2- occupies an sd-type hybrid orbital localized on the M atom (M=Zr, Hf). The structural parameters of ZrO2 and HfO2 were found to be very similar. The difference in geometries between the neutral and the anion is along the symmetrical stretching and bending modes. Together, these studies unveil significant differences in the electronic structures of ZrO2 and HfO2.

  1. Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

    NASA Astrophysics Data System (ADS)

    Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

    2016-12-01

    We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

  2. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules.

  3. Mixed Al and Si doping in ferroelectric HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  4. Comparative study of atomic-layer-deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs

    NASA Astrophysics Data System (ADS)

    Yu, Xinjiang; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Qin, Zaiyang

    2016-11-01

    Interfacial properties of n-GaAs metal-oxide-semiconductor (MOSCAPs) with the gate dielectrics of HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox are investigated. The results reveal that Hf0.5Al0.5Ox has larger permittivity and lower interface trap density than that of HfO2/Al2O3. In order to explain the result from the physical perspective, the XPS tests of all three samples are performed. It is found that the main reason to form interface trap of three samples treated with 500 °C post-deposition annealing, is attributed to the interfacial component of Ga2O3 and The Hf0.5Al0.5Ox dielectric is beneficial to reducing the formation of Ga2O3.

  5. Organic Electronic Devices Using Crosslinked Polyelectrolyte Multilayers as an Ultra-Thin Dielectric Material

    DTIC Science & Technology

    2006-09-01

    2.3.2.2 Function of heat treatment temperature……………………...…54 2.3.3 Heat-induced Crosslinking within PEI /PAA Films……………….………….…..57 2.4 Conclusion...strength as a function of dielectric thickness…………..70 3.3.3 Tertiary Amide Crosslinking with Linear Poly(ethylenimine) ( PEI )……….….…79 3.4...breakdown strength of these dielectric films is then analyzed as a function of their degree of cross-linking, layer morphology, and film thickness to

  6. Surface treatment for the atomic layer deposition of HfO2 on silicon

    NASA Astrophysics Data System (ADS)

    Damlencourt, J.-F.; Renault, O.; Martin, F.; Séméria, M.-N.; Billon, T.; Bedu, F.

    2005-04-01

    The atomic layer deposition (ALD) of HfO2 on silicon with a Cl2 surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites necessary for the ALD growth. The growth rates obtained by spectroscopic ellipsometry and total x-ray fluorescence spectroscopy indicate that the nucleation sites (i.e., the -OH groups), which are necessary to perform some bidimensional ALD growth, are generated during this surface treatment. After deposition of thin HfO2 layers (from a few monolayers up to 8.7nm), a very thin parasitic SiOx layer, underneath 1 monolayer of Hf silicate, is observed by x-ray photoelectron spectroscopy. Nevertheless, an equivalent oxide thickness of 1.1nm is obtained with an as-deposited 3.7nm thick HfO2 layer.

  7. High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer☆

    PubMed Central

    Petritz, Andreas; Wolfberger, Archim; Fian, Alexander; Krenn, Joachim R.; Griesser, Thomas; Stadlober, Barbara

    2013-01-01

    A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol–gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm2 V−1 s−1 at an operation voltage as low as −4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec−1 as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits. PMID:24748853

  8. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    PubMed Central

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  9. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    NASA Astrophysics Data System (ADS)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V‑1 sec‑1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  10. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

    PubMed

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-17

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  11. Light Coupling and Trapping in Ultrathin Cu(In,Ga)Se2 Solar Cells Using Dielectric Scattering Patterns.

    PubMed

    van Lare, Claire; Yin, Guanchao; Polman, Albert; Schmid, Martina

    2015-10-27

    We experimentally demonstrate photocurrent enhancement in ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells with absorber layers of 460 nm by nanoscale dielectric light scattering patterns printed by substrate conformal imprint lithography. We show that patterning the front side of the device with TiO2 nanoparticle arrays results in a small photocurrent enhancement in almost the entire 400-1200 nm spectral range due to enhanced light coupling into the cell. Three-dimensional finite-difference time-domain simulations are in good agreement with external quantum efficiency measurements. Patterning the Mo/CIGSe back interface using SiO2 nanoparticles leads to strongly enhanced light trapping, increasing the efficiency from 11.1% for a flat to 12.3% for a patterned cell. Simulations show that optimizing the array geometry could further improve light trapping. Including nanoparticles at the Mo/CIGSe interface leads to substantially reduced parasitic absorption in the Mo back contact. Parasitic absorption in the back contact can be further reduced by fabricating CIGSe cells on top of a SiO2-patterned In2O3:Sn (ITO) back contact. Simulations show that these semitransparent cells have similar spectrally averaged reflection and absorption in the CIGSe active layer as a Mo-based patterned cell, demonstrating that the absorption losses in the Mo can be partially turned into transmission through the semitransparent geometry.

  12. On the structural origins of ferroelectricity in HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Sang, Xiahan; Grimley, Everett D.; Schenk, Tony; Schroeder, Uwe; LeBeau, James M.

    2015-04-01

    Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.

  13. Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD

    NASA Astrophysics Data System (ADS)

    Spassov, D.; Paskaleva, A.; Guziewicz, E.; Luka, G.; AKrajewski, T.; Kopalko, K.; Wierzbicka, A.; Blagoev, B.

    2016-10-01

    Electrical and charge trapping properties of atomic layer deposited HfO2-Al2O3 multilayer stacks with two different Al2O3 sublayer thicknesses were investigated regarding their implementation in charge trapping non-volatile memories. The effect of post deposition annealing in oxygen at 600°C is also studied. The decreasing Al2O3 thickness increases the stack's dielectric constant and the density of the initial positive oxide charge. The initial oxide charge increases after annealing to ∼6×1012 cm-2 and changes its sign to negative for the stacks with thicker Al2O3. The annealing enhances the dielectric constant of the stacks and reduces their thickness preserving the amorphous status. Nevertheless the annealing is not beneficial for the stacks with thicker Al2O3 as it considerably increases leakage currents. Conduction mechanisms in stacks were considered in terms of hopping conduction at low electric fields, and Fowler- Nordheim tunnelling, Schottky emission and Poole-Frenkel effect at higher ones. Maximum memory windows of about 12 and 16V were obtained for the as-grown structures with higher and lower Al2O3 content, respectively. In latter case additional improvement (the memory window increase up to 23V) is achieved by the annealing.

  14. All-dielectric ultrathin conformal metasurfaces: lensing and cloaking applications at 532 nm wavelength

    PubMed Central

    Cheng, Jierong; Jafar-Zanjani, Samad; Mosallaei, Hossein

    2016-01-01

    Metasurfaces are ideal candidates for conformal wave manipulation on curved objects due to their low profiles and rich functionalities. Here we design and analyze conformal metasurfaces for practical optical applications at 532 nm visible band for the first time. The inclusions are silicon disk nanoantennas embedded in a flexible supporting layer of polydimethylsiloxane (PDMS). They behave as local phase controllers in subwavelength dimensions for successful modification of electromagnetic responses point by point, with merits of high efficiency, at visible regime, ultrathin films, good tolerance to the incidence angle and the grid stretching due to the curvy substrate. An efficient modeling technique based on field equivalence principle is systematically proposed for characterizing metasurfaces with huge arrays of nanoantennas oriented in a conformal manner. Utilizing the robust nanoantenna inclusions and benefiting from the powerful analyzing tool, we successfully demonstrate the superior performances of the conformal metasurfaces in two specific areas, with one for lensing and compensation of spherical aberration, and the other carpet cloak, both at 532 nm visible spectrum. PMID:27929070

  15. All-dielectric ultrathin conformal metasurfaces: lensing and cloaking applications at 532 nm wavelength

    NASA Astrophysics Data System (ADS)

    Cheng, Jierong; Jafar-Zanjani, Samad; Mosallaei, Hossein

    2016-12-01

    Metasurfaces are ideal candidates for conformal wave manipulation on curved objects due to their low profiles and rich functionalities. Here we design and analyze conformal metasurfaces for practical optical applications at 532 nm visible band for the first time. The inclusions are silicon disk nanoantennas embedded in a flexible supporting layer of polydimethylsiloxane (PDMS). They behave as local phase controllers in subwavelength dimensions for successful modification of electromagnetic responses point by point, with merits of high efficiency, at visible regime, ultrathin films, good tolerance to the incidence angle and the grid stretching due to the curvy substrate. An efficient modeling technique based on field equivalence principle is systematically proposed for characterizing metasurfaces with huge arrays of nanoantennas oriented in a conformal manner. Utilizing the robust nanoantenna inclusions and benefiting from the powerful analyzing tool, we successfully demonstrate the superior performances of the conformal metasurfaces in two specific areas, with one for lensing and compensation of spherical aberration, and the other carpet cloak, both at 532 nm visible spectrum.

  16. All-dielectric ultrathin conformal metasurfaces: lensing and cloaking applications at 532 nm wavelength.

    PubMed

    Cheng, Jierong; Jafar-Zanjani, Samad; Mosallaei, Hossein

    2016-12-08

    Metasurfaces are ideal candidates for conformal wave manipulation on curved objects due to their low profiles and rich functionalities. Here we design and analyze conformal metasurfaces for practical optical applications at 532 nm visible band for the first time. The inclusions are silicon disk nanoantennas embedded in a flexible supporting layer of polydimethylsiloxane (PDMS). They behave as local phase controllers in subwavelength dimensions for successful modification of electromagnetic responses point by point, with merits of high efficiency, at visible regime, ultrathin films, good tolerance to the incidence angle and the grid stretching due to the curvy substrate. An efficient modeling technique based on field equivalence principle is systematically proposed for characterizing metasurfaces with huge arrays of nanoantennas oriented in a conformal manner. Utilizing the robust nanoantenna inclusions and benefiting from the powerful analyzing tool, we successfully demonstrate the superior performances of the conformal metasurfaces in two specific areas, with one for lensing and compensation of spherical aberration, and the other carpet cloak, both at 532 nm visible spectrum.

  17. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    NASA Astrophysics Data System (ADS)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ˜35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  18. Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

    PubMed Central

    Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran

    2015-01-01

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect. PMID:26503804

  19. Enhancement of the blue photoluminescence intensity for the porous silicon with HfO2 filling into microcavities

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Du, Xianghao; Sun, Weideng; Han, Zuyin; Wu, Zhengran

    2015-10-01

    With HfO2 filled into the microcavities of the porous single-crystal silicon, the blue photoluminescence was greatly enhanced at room temperature. On one hand, HfO2 contributes to the light emission with the transitions of the defect levels for oxygen vacancy. On the other hand, the special filling-into-microcavities structure of HfO2 leads to the presence of ferroelectricity, which greatly enhances the blue emission from porous silicon. Since both HfO2 and Si are highly compatible with Si-based electronic industry, combined the low-cost and convenient process, the HfO2-filled porous Si shows a promising application prospect.

  20. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

    PubMed

    Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V; Mikolajick, Thomas

    2014-12-23

    Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

  1. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  2. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    NASA Technical Reports Server (NTRS)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  3. Effect of ionic substitutions on the structure and dielectric properties of hafnia: A first principles study

    NASA Astrophysics Data System (ADS)

    Cockayne, Eric

    2008-04-01

    First principles calculations were used to study the effects of Si, Ti, Zr, and Ta (+N) substitutional impurities on the structure and dielectric properties of crystalline HfO2. The dielectric constant of monoclinic HfO2 can be enhanced by substituting more polarizable ions for Hf, but the band gap is decreased. Enhancing the permittivity without decreasing the band gap requires forming the tetragonal or cubic phase of HfO2. Among the ions studied, Si alone is found to stabilize a nonmonoclinic phase of HfO2 relative to the monoclinic phase, but only at an atomic concentration above about 20%. Various experiments have reported the formation of nonmonoclinic phases of HfO2 with increased permittivity when other ions are substituted for Hf. It is concluded that these structures are, in general, either metastable or are stabilized by extrinsic factors or by a layered arrangement of the substitutional cations.

  4. Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

    NASA Astrophysics Data System (ADS)

    Ando, Takashi; Copel, Matt; Bruley, John; Frank, Martin M.; Watanabe, Heiji; Narayanan, Vijay

    2010-03-01

    We demonstrate metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric and clarify the kinetics underlying this process. The intrinsic IL scaling effect on electron mobility is separated from La and Al-induced dipole effects. We find that the mobility degradation for La-containing high-κ dielectrics is not due to the La-induced dipole but due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation. This unique nature of the La-induced dipole enables aggressive equivalent oxide thickness scaling down to 0.42 nm without extrinsic mobility degradation when combined with IL scaling.

  5. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

    NASA Astrophysics Data System (ADS)

    Aguirre-Tostado, F. S.; Milojevic, M.; Choi, K. J.; Kim, H. C.; Hinkle, C. L.; Vogel, E. M.; Kim, J.; Yang, T.; Xuan, Y.; Ye, P. D.; Wallace, R. M.

    2008-08-01

    A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO2 and Al2O3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH4OH or (NH4)2S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH4)2S shows a decreased band bending and slightly thinner films with respect to NH4OH.

  6. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

    NASA Astrophysics Data System (ADS)

    Pazos, S.; Aguirre, F.; Miranda, E.; Lombardo, S.; Palumbo, F.

    2017-03-01

    In this work, the breakdown transients of A l 2 O 3 - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, A l 2 O 3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of A l 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.

  7. Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

    PubMed

    Lee, Min-Seon; Oh, Hoon-Jung; Lee, Joo-Hee; Lee, In-Geun; Shin, Woo-Gon; Kim, Kyu-Dong; Park, Jin-Gu; Ko, Dae-Hong

    2016-05-01

    The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

  8. Thermodynamic mixing properties of the UO2-HfO2 solid solution: Density functional theory and Monte Carlo simulations

    NASA Astrophysics Data System (ADS)

    Yuan, Ke; Ewing, Rodney C.; Becker, Udo

    2015-03-01

    HfO2 is a neutron absorber and has been mechanically mixed with UO2 in nuclear fuel in order to control the core power distribution. During nuclear fission, the temperature at the center of the fuel pellet can reach above 1300 K, where hafnium may substitute uranium and form the binary solid solution of UO2-HfO2. UO2 adopts the cubic fluorite structure, but HfO2 can occur in monoclinic, tetragonal, and cubic structures. The distribution of Hf and U ions in the UO2-HfO2 binary and its atomic structure influence the thermal conductivity and melting point of the fuel. However, experimental data on the UO2-HfO2 binary are limited. Therefore, the enthalpies of mixing of the UO2-HfO2 binary with three different structures were calculated in this study using density functional theory and subsequent Monte Carlo simulations. The free energy of mixing was obtained from thermodynamic integration of the enthalpy of mixing over temperature. From the ΔG of mixing, a phase diagram of the binary was obtained. The calculated UO2-HfO2 binary forms extensive solid solution across the entire compositional range, but there are a variety of possible exsolution phenomena associated with the different HfO2 polymorphs. As the structure of the HfO2 end member adopts lower symmetry and becomes less similar to cubic UO2, the miscibility gap of the phase diagram expands, accompanied by an increase in cell volume by 7-10% as the structure transforms from cubic to monoclinic. Close to the UO2 end member, which is relevant to the nuclear fuel, the isometric uranium-rich solid solutions exsolve as the fuel cools, and there is a tendency to form the monoclinic hafnium-rich phase in the matrix of the isometric, uranium-rich solid solution phase.

  9. The effects of layering in ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  10. Surface ferromagnetism in HfO2 induced by excess oxygen

    NASA Astrophysics Data System (ADS)

    Zhang, Qinfang; Chen, Guohong; Yunoki, Seiji

    2017-02-01

    First-principles numerical simulations based on density functional theory are performed to examine surface electronic and magnetic properties of cubic, tetragonal, and monoclinic HfO2 with low index terminations. Our systematic calculations reveal that i) stoichiometric surfaces and Hf rich non-stoichiometric surfaces are non magnetic, and ii) O rich non-stoichiometric surfaces are ferromagnetic and metallic. The ferromagnetism found here is attributed to O surface electronic states with large O 2 p spin exchange energy. This finding provides a novel pathway to d0 ferromagnetism for simple oxides with no magnetic ions involved. We also calculate the surface energy and discuss a recent controversial issue of ferromagnetism observed experimentally in HfO2.

  11. Relative stability of ZrO2 and HfO2 structural phases

    NASA Astrophysics Data System (ADS)

    Lowther, J. E.; Dewhurst, J. K.; Leger, J. M.; Haines, J.

    1999-12-01

    The potentially hard oxides ZrO2 and HfO2 are investigated using ab initio electronic structure calculations and structural properties of the lowest phases compared. In general there are strong similarities between some phases apart from the softer monoclinic baddeyelite phase, which in HfO2 is the lowest energy phase with a bulk modulus almost twice that of ZrO2. Other differences relate to the formation of the first orthorhombic phase, especially the inter-relation between Pbc21 and Pbca structures. The bulk moduli of the high-pressure, cotunnite-type phases are in good agreement with experimental results. The present calculations confirm that these phases are highly incompressible and are thus good candidates for hard materials.

  12. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    PubMed Central

    González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

    2015-01-01

    In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers. PMID:25602271

  13. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2.

    PubMed

    González, Gabriel; Kolosovas-Machuca, Eleazar Samuel; López-Luna, Edgar; Hernández-Arriaga, Heber; González, Francisco Javier

    2015-01-16

    In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

  14. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    PubMed

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  15. Normally-off HfO2-gated diamond field effect transistors

    NASA Astrophysics Data System (ADS)

    Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y.

    2013-08-01

    A normally-off hydrogenated-diamond (H-diamond) field effect transistor (FET) using a HfO2 gate oxide is demonstrated. The HfO2 gate oxide has a bilayer structure which is fabricated by a sputter-deposition (SD) technique on a thin buffer layer prepared by an atomic layer deposition (ALD) technique. The role of the ALD-HfO2 is found to prevent deterioration of the H-diamond surface by the SD process. The leakage current density of the SD-HfO2/ALD-HfO2/H-diamond structure is smaller than 1.1 × 10-4 A cm-2 at gate voltages from -9.0 to 2.0 V. The capacitance-voltage characteristic shows that fixed and trapped charge densities are low enough to operate the FET. The HfO2-gated FET has p-type channel and complete normally-off characteristics. The drain-source current maximum, threshold voltage, extrinsic transconductance maximum, and effective mobility of the FET with gate length of 4 μm are -37.6 mA mm-1, -1.3 ± 0.1 V, 11.2 ± 0.1 mS mm-1, and 38.7 ± 0.5 cm2 V-1 s-1, respectively.

  16. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    NASA Astrophysics Data System (ADS)

    Dai, Yuehua; Pan, Zhiyong; Wang, Feifei; Li, Xiaofeng

    2016-08-01

    The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  17. Distribution of electron traps in SiO2/HfO2 nMOSFET

    NASA Astrophysics Data System (ADS)

    Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

    2016-05-01

    In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

  18. Ferroelectric Properties of Pt/Pb5Ge3O11/Pt and Pt/Pb5Ge3O11/HfO2/Si Structures

    NASA Astrophysics Data System (ADS)

    Ohara, Shuichiro; Aizawa, Koji; Ishiwara, Hiroshi

    2005-09-01

    The ferroelectric properties of metal-ferroelectric-metal (MFM) capacitors with a Pt/Pb5Ge3O11(PGO)/Pt structure and metal-ferroelectric-insulator-semiconductor (MFIS) diodes with a Pt/PGO/HfO2/Si structure were investigated. C-axis-oriented PGO thin films were formed on both Pt/SiO2/Si and HfO2 (6 nm)/Si structures by a sol-gel method. Typical values of remanent polarization (2Pr), coercive field (2Ec), and dielectric constant in the MFM capacitors were 5.7 μC/cm2, 63 kV/cm, and 50, respectively, and the remanent polarization gradually increased with the switching pulses for up to 1 × 1010 cycles. It was also found that the memory window in the MFIS diodes with a 340-nm-thick PGO film was as large as 1.3 V.

  19. Study of the picosecond laser damage in HfO2/SiO2-based thin-film coatings in vacuum

    NASA Astrophysics Data System (ADS)

    Kozlov, A. A.; Papernov, S.; Oliver, J. B.; Rigatti, A.; Taylor, B.; Charles, B.; Smith, C.

    2016-12-01

    The laser damage thresholds of various HfO2/SiO2-based thin film coatings, including multilayer dielectric (MLD) gratings and high reflectors of different designs, prepared by E-beam and Plasma Ion Assisted Deposition (PIAD) methods, were investigated in vacuum, dry nitrogen, and after air-vacuum cycling. Single and multiple-pulse damage thresholds and their pulse-length scaling in the range of 0.6 to 100 ps were measured using a vacuum damage test station operated at 1053nm. The E-beam deposited high reflectors showed higher damage thresholds with square-root pulse-length scaling, as compared to PIAD coatings, which typically show slower power scaling. The former coatings appeared to be not affected by air/vacuum cycling, contrary to PIAD mirrors and MLD gratings. The relation between 1-on-1 and N-on-1 damage thresholds was found dependent on coating design and deposition methods.

  20. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    NASA Astrophysics Data System (ADS)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  1. Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress

    NASA Astrophysics Data System (ADS)

    Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung

    2012-04-01

    This letter studies the channel hot carrier stress (CHCS) behaviors on high dielectric constant insulator and metal gate HfO2/TiN p-channel metal-oxide-semiconductor field effect transistors. It can be found that the degradation is associated with electron trapping, resulting in Gm decrease and positive Vth shift. However, Vth under saturation region shows an insignificant degradation during stress. To compare that, the CHC-induced electron trapping induced DIBL is proposed to demonstrate the different behavior of Vth between linear and saturation region. The devices with different channel length are used to evidence the trapping-induced DIBL behavior.

  2. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    NASA Astrophysics Data System (ADS)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  3. HfO 2 -based ferroelectric modulator of terahertz waves with graphene metamaterial

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zheng-Ran; Han, Zu-Yin; Jung, Hyung-Suk

    2016-10-01

    Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology. Project supported by the National Natural Science Foundation of China (Grant No. 11374182).

  4. Characterization of nanostructured HfO 2 films using RBS and PAC

    NASA Astrophysics Data System (ADS)

    Cavalcante, F. H. M.; Gomes, M. R.; Carbonari, A. W.; Pereira, L. F. D.; Rossetto, D. A.; Costa, M. S.; Alves, E.; Barradas, N. P.; Franco, N.; Redondo, L. M.; Lopes, A. M. L.; Soares, J. C.

    2012-02-01

    The hyperfine field at 181Ta lattice sites in a nanostructured HfO 2 thin film doped with Fe was studied using Rutherford Backscattering Spectrometry and Perturbed Angular Correlation techniques. The 409 nm Hf film was deposited by Electron Beam Evaporation on a silicon substrate. The radioactive 181Hf ions were produced by neutron activation of the nanofilm in the Brazilian Research Reactor (IPEN IEA-R1) by the reaction 180Hf(n,γ) 181Hf. These studies provided an excellent opportunity to obtain unique information regarding local arrangement of the grains, structure, phase transformations of nanoparticles and interfaces of nanostructured materials and the thin film.

  5. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film.

    PubMed

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J; Sakata, Osami; Funakubo, Hiroshi

    2016-09-09

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed - electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm(2). Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm(2). This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.

  6. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  7. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    NASA Astrophysics Data System (ADS)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-09-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.

  8. Stress and environmental shift characteristics of HfO2/SiO2 multilayer coatings

    NASA Astrophysics Data System (ADS)

    Anzellotti, J. F.; Smith, Douglas J.; Sczupak, Robert J.; Chrzan, Z. Roman

    1997-05-01

    HfO2/SiO2 polarizer coatings for 1054 nm have been produced that have low stress at explicit environmental conditions without the employment of backside stress- compensation films. In this process hafnia is condensed from a metallic melt and silica from an oxide source, both via electron-beam evaporation. Specifically, this process has been adopted for multilayer designs with stringent requirements on spectral control and wavefront distortion. Efforts to meet these requirements have prompted various investigations of coating stress and spectral behavior, especially under changing environmental conditions. Results have shown that coating stress and optical thickness vary significantly with humidity. THese quantities have been measured under both ambient air and dry nitrogen atmospheres. The effects of coating parameters on stress and environmental stability have been examined for an experimental hafnia/silica polarizer coating. The aforementioned parameters are hafnia deposition rate, oxygen pressure during hafnia deposition, and oxygen pressure during silica deposition. Results indicate a strong correlation of coating stress to oxygen pressure during the silica evaporation. Data on the aging of stress in hafnia/silica coatings will also be presented. The HfO2/SiO2 process has ben utilized in high-laser-damage- threshold coatings for the OMEGA laser system and for National Ignition Facility development coatings at the Laboratory for Laser Energetics.

  9. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    PubMed Central

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes. PMID:27608815

  10. Thickness dependent wetting properties and surface free energy of HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Zenkin, Sergei; Belosludtsev, Alexandr; Kos, Šimon; Čerstvý, Radomír; Haviar, Stanislav; Netrvalová, Marie

    2016-06-01

    We show here that intrinsic hydrophobicity of HfO2 thin films can be easily tuned by the variation of film thickness. We used the reactive high-power impulse magnetron sputtering for preparation of high-quality HfO2 films with smooth topography and well-controlled thickness. Results show a strong dependence of wetting properties on the thickness of the film in the range of 50-250 nm due to the dominance of the electrostatic Lifshitz-van der Waals component of the surface free energy. We have found the water droplet contact angle ranging from ≈120° for the thickness of 50 nm to ≈100° for the thickness of 2300 nm. At the same time the surface free energy grows from ≈25 mJ/m2 for the thickness of 50 nm to ≈33 mJ/m2 for the thickness of 2300 nm. We propose two explanations for the observed thickness dependence of the wetting properties: influence of the non-dominant texture and/or non-monotonic size dependence of the particle surface energy.

  11. Morphology and Photoluminescence of HfO2Obtained by Microwave-Hydrothermal

    PubMed Central

    2009-01-01

    In this letter, we report on the obtention of hafnium oxide (HfO2) nanostructures by the microwave-hydrothermal method. These nanostructures were analyzed by X-ray diffraction (XRD), field-emission gum scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDXS), ultraviolet–visible (UV–vis) spectroscopy, and photoluminescence (PL) measurements. XRD patterns confirmed that this material crystallizes in a monoclinic structure. FEG-SEM and TEM micrographs indicated that the rice-like morphologies were formed due to an increase in the effective collisions between the nanoparticles during the MH processing. The EDXS spectrum was used to verify the chemical compositional of this oxide. UV–vis spectrum revealed that this material have an indirect optical band gap. When excited with 488 nm wavelength at room temperature, the HfO2nanostructures exhibited only one broad PL band with a maximum at around 548 nm (green emission). PMID:20628455

  12. Structural and electrical properties of metal ferroelectric insulator semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer

    NASA Astrophysics Data System (ADS)

    Roy, A.; Dhar, A.; Bhattacharya, D.; Ray, S. K.

    2008-05-01

    Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C-V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10-7 A cm-2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer-ferroelectric interface is studied by the voltage stress method. Capacitance-voltage (C-V) and leakage current density (J-V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

  13. Comparison of n-type Gd2O3 and Gd-doped HfO2

    NASA Astrophysics Data System (ADS)

    Losovyj, Ya B.; Wooten, David; Colon Santana, Juan; An, Joonhee Michael; Belashchenko, K. D.; Lozova, N.; Petrosky, J.; Sokolov, A.; Tang, Jinke; Wang, Wendong; Arulsamy, Navamoney; Dowben, P. A.

    2009-01-01

    Gd2O3 and Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Gd 4f photoexcitation peaks at roughly 7 and 5 eV below the valence band maximum have been identified using the resonant photoemission of Gd2O3 and Gd-doped HfO2 films, respectively. In the case of Gd2O3, strong hybridization with the O 2p band is demonstrated, and there is evidence that the Gd 4f weighted band exhibits dispersion in the bulk band structure. The rectifying (diode-like) properties of Gd-doped HfO2-silicon and Gd2O3-silicon heterojunctions are demonstrated.

  14. First principles study of defects in high-k HfO2

    NASA Astrophysics Data System (ADS)

    Wang, Baozhu; Wang, Min; Duan, Fengxia; Ren, Jie; Li, Ying; Zhou, Tiege

    2016-11-01

    Intrinsic defects and doping N, Si, Al, and Ta defects in monoclinic HfO2 were investigated by using the first-principle calculations based on density functional theory (DFT). The results show that the defects of TaHf+1, AlHf-1, VHf-4 are stable under oxygen-rich conditions; while the Hfi+4, VO3+2, NO4-1 are stable when the conditions are hafnium-rich. It is revealed that the defects under hafnium-rich conditions are easy to form, and the results also show the properties of negative -U. Defects of the thermodynamic transition levels in the Si band gap can capture or release the charge. It will result in the effect of Fermi level pinning, so it can seriously affect the stability of the device.

  15. Self-compliance multilevel storage characteristic in HfO2-based device

    NASA Astrophysics Data System (ADS)

    Gao, Xiao-Ping; Fu, Li-Ping; Chen, Chuan-Bing; Yuan, Peng; Li, Ying-Tao

    2016-10-01

    In this paper, the self-compliance bipolar resistive switching characteristic of an HfO2-based memory device with Ag/HfO2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s, which may be useful for the applications in nonvolatile multilevel storage. Project supported by the National Natural Science Foundation of China (Grant Nos. 61664001, 61574070, and 61306148) and the Application Research and Development Plan of Gansu Academy of Sciences, China (Grant Nos. 2015JK-11 and 2015JK-01).

  16. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

    NASA Astrophysics Data System (ADS)

    Dai, Yuehua; Zhao, Yuanyang; Wang, Jiayu; Xu, Jianbin; Yang, Fei

    2015-01-01

    HfO2-based resistive random access memory (RRAM) takes advantage of oxygen vacancy (V o) defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP) is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS) phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

  17. Growth of HfO2/TiO2 nanolaminates by atomic layer deposition and HfO2-TiO2 by atomic partial layer deposition

    NASA Astrophysics Data System (ADS)

    Hernández-Arriaga, H.; López-Luna, E.; Martínez-Guerra, E.; Turrubiartes, M. M.; Rodríguez, A. G.; Vidal, M. A.

    2017-02-01

    A novel growth technique, called atomic partial layer deposition (APLD), has been proposed to expand the applications of, and the research in, atomic layer deposition (ALD). This technique allows the possibility for the fabrication of well-controlled alloys on a single atomic layer scale. To demonstrate the capabilities of this technique, samples of HfO2 and TiO2 were prepared as conventional ALD nanolaminates through the repeated exposure of the separated metal-precursor and reactant. Subsequently, HfO2-TiO2 APLD growth mode samples were obtained by varying the precursor doses and exposure times to obtain a fractional coverage in the monolayer of Hf and Ti. The thickness and structure of the samples were studied by X-ray reflectivity. The surface topography was studied using atomic force microscopy along with Kelvin probe force microscopy for surface potential mapping. Clear differences on the surface, compared with the conventional HfO2/TiO2 ALD nanolaminates, were observed, which confirmed the HfO2-TiO2 APLD growth. The films were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile scans and angle resolved XPS, where well-defined HfO2 and TiO2 contributions were found for both the conventional and APLD mode samples, and an additional contribution, assigned to a ternary phase Hf-Ti-O, in the APLD grown films was observed. This result confirms that Hf and Ti form an alloy in a monolayer by APLD mode growth.

  18. Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Ma, Xue-Li; Yang, Hong; Xiang, Jin-Juan; Wang, Xiao-Lei; Wang, Wen-Wu; Zhang, Jian-Qi; Yin, Hua-Xiang; Zhu, Hui-Long; Zhao, Chao

    2017-02-01

    Not Available Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016501) and the National Natural Science Foundation of China (Grant Nos. 61574168 and 61504163).

  19. Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory

    NASA Astrophysics Data System (ADS)

    Ye, Cong; Deng, Tengfei; Zhang, Junchi; Shen, Liangping; He, Pin; Wei, Wei; Wang, Hao

    2016-10-01

    We prepared bilayer HfO2/TiO2 resistive random accessory memory (RRAM) using magnetron sputtering on an ITO/PEN flexible substrate. The switching voltages (V SET and V RESET) were smaller for the Pt/HfO2/TiO2/ITO device than for a Pt/HfO2/ITO memory device. The insertion of a TiO2 layer in the switching layer was inferred to act as an oxygen reservoir to reduce the switching voltages. In addition, greatly improved uniformity was achieved, which showed the coefficient of the variations of V SET and V RESET to be 9.90% and 6.35% for the bilayer structure RRAM. We deduced that occurrence of conductive filament connection/rupture at the interface of the HfO2 and TiO2, in combination with the HfO2 acting as a virtual cathode, led to the improved uniformity. A multilevel storage capability can be obtained by varying the stop voltage in the RESET process for bilayer HfO2/TiO2 RRAM. By analyzing the current conduction mechanism, we demonstrated that the multilevel high resistance state (HRS) was attributable to the increased barrier height when the stop voltage was increased.

  20. Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfaces

    NASA Astrophysics Data System (ADS)

    Schaeffer, James Kenyon, III

    As metal-oxide-semiconductor field-effect transistor (MOSFET) gate lengths scale down below 45 nm, the gate oxide thickness approaches 1 nm equivalent oxide thickness. At this thickness, conventional silicon dioxide (SiO 2) gate dielectrics suffer from excessive gate leakage. Higher permittivity dielectrics are required to counter the increase in gate leakage. Hafnium dioxide (HfO2) has emerged as a promising dielectric candidate. HfO2 films deposited using metal organic chemical vapor deposition are being studied to determine the impact of process and annealing conditions on the physical and electrical properties of the gate dielectric. This study indicates that deposition and annealing temperatures influence the microstructure, density, impurity concentration, chemical environment of the impurities, and band-gap of the HfO2 dielectric. Correlations of the electrical and physical properties of the films indicate that impurities in the form of segregated carbon clusters, and low HfO2 density are detrimental to the leakage properties of the gate dielectric. Additionally, as the HfO2 thickness scales, the additional series capacitance due to poly-silicon depletion plays a larger roll in reducing the total gate capacitance. To solve this problem, high performance bulk MOSFETs will require dual metal gate electrodes possessing work functions near the silicon band edges for optimized drive current. This investigation evaluates TiN, Ta-Si-N, Ti-Al-N, WN, TaN, TaSi, Ir and IrO2 electrodes as candidate electrodes on HfO2 dielectrics. The metal-dielectric compatibility was studied by annealing the gate stacks at different temperatures. The physical stability and effective work functions of metal electrodes on HfO2 are discussed. Finally, Fermi level pinning of the metal is a barrier to identifying materials with appropriate threshold voltages. The contributions to the Fermi level pinning of platinum electrodes on HfO2 gate dielectrics are investigated by examining the

  1. Hafnia (HfO2) nanoparticles as an X-ray contrast agent and mid-infrared biosensor

    NASA Astrophysics Data System (ADS)

    McGinnity, Tracie L.; Dominguez, Owen; Curtis, Tyler E.; Nallathamby, Prakash D.; Hoffman, Anthony J.; Roeder, Ryan K.

    2016-07-01

    The interaction of hafnium oxide (HfO2) nanoparticles (NPs) with X-ray and mid-infrared radiation was investigated to assess the potential as a multifunctional diagnostic probe for X-ray computed tomography (CT) and/or mid-infrared biosensing. HfO2 NPs of controlled size were prepared by a sol-gel process and surface functionalized with polyvinylpyrrolidone, resulting in relatively spherical and monodispersed NPs with a tunable mean diameter in the range of ~7-31 nm. The X-ray attenuation of HfO2 NPs was measured over 0.5-50 mM concentration and compared with Au NPs and iodine, which are the most prominent X-ray contrast agents currently used in research and clinical diagnostic imaging, respectively. At clinical CT tube potentials >80 kVp, HfO2 NPs exhibited superior or similar X-ray contrast compared to Au NPs, while both exhibited significantly greater X-ray contrast compared to iodine, due to the favorable location of the k-shell absorption edge for hafnium and gold. Moreover, energy-dependent differences in X-ray attenuation enabled simultaneous quantitative molecular imaging of each agent using photon-counting spectral (multi-energy) CT. HfO2 NPs also exhibited a strong mid-infrared absorption in the Reststrahlen band from ~250-800 cm-1 and negative permittivity below 695 cm-1, which can enable development of mid-infrared biosensors and contrast agents, leveraging surface enhanced mid-infrared and/or phonon polariton absorption.

  2. High-k Dielectrics for Application in Broadband Radio Frequency-Microelectromechanical System Capacitive Shunt Switch

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Lu, Jian; Ichiki, Masaaki; Onodera, Kazumasa; Maeda, Ryutaro

    130 nm-thick lead zirconate titanate(PZT)/45 nm-thick HfO2 stack and single 45 nm-thick HfO2 dielectric film were utilized as insulator layer in π-type radio frequency (RF) capacitive shunt switches for achieving high isolation performance in broadband application. Thin PZT film in perovskite structure mainly with (1 1 1) orientation was successfully prepared at low temperature (500°C) using sol-gel method. The thin PZT film exhibited excellent ferroelectric properties and high dielectric constant (k ≈ 1185). Thin HfO2 film was prepared by sputtering method in a gas mixture of O2 and Ar. The thin HfO2 film had the dielectric constant of about 17 and the dielectric strength of about 24 MV/cm. The switch of PZT/HfO2 stack dielectric showed isolation performance better than -20 dB in the frequency range of 1 ∼ 35 GHz. The switch of HfO2 had isolation performance better than -40 dB in the frequency of 5 ∼ 35 GHz, suggesting its attractive prospective in practical broadband application.

  3. Hafnium zirconate gate dielectric for advanced gate stack applications

    NASA Astrophysics Data System (ADS)

    Hegde, R. I.; Triyoso, D. H.; Samavedam, S. B.; White, B. E.

    2007-04-01

    We report on the development of a hafnium zirconate (HfZrO4) alloy gate dielectric for advanced gate stack applications. The HfZrO4 and hafnium dioxide (HfO2) films were formed by atomic layer deposition using metal halides and heavy water as precursors. The HfZrO4 material properties were examined and compared with those of HfO2 by a wide variety of analytical methods. The dielectric properties, device performance, and reliability of HfZrO4 were investigated by fabricating HfZrO4/tantalum carbide (TaxCy) metal-oxide-semiconductor field effect transistor. The HfZrO4 dielectric film has smaller band gap, smaller and more uniform grains, less charge traps, and more uniform film quality than HfO2. The HfZrO4 dielectric films exhibited good thermal stability with silicon. Compared to HfO2, the HfZrO4 gate dielectric showed lower capacitance equivalent thickness value, higher transconductance, less charge trapping, higher drive current, lower threshold voltage (Vt), reduced capacitance-voltage (C-V ) hysteresis, lower interface state density, superior wafer level thickness uniformity, and longer positive bias temperature instability lifetime. Incorporation of zirconium dioxide (ZrO2) into HfO2 enhances the dielectric constant (k ) of the resulting HfZrO4 which is associated with structural phase transformation from mainly monoclinic to tetragonal. The tetragonal phase increases the k value of HfZrO4 dielectric to a large value as predicted. The improved device characteristics are attributed to less oxygen vacancy in the fine grained microstructure of HfZrO4 films.

  4. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

    PubMed Central

    Jiang, Hao; Han, Lili; Lin, Peng; Wang, Zhongrui; Jang, Moon Hyung; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2016-01-01

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. Here we report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression, suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. This work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications. PMID:27334443

  5. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

    DOE PAGES

    Jiang, Hao; Han, Lili; Lin, Peng; ...

    2016-06-23

    Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated that metal cations could also play an important role, but no direct physical characterizations have been reported yet. We report a Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention. We also programmed the device to 24 discrete resistance levels, and also demonstrated over a million (220) epochs of potentiation and depression,more » suggesting that our devices can be used for both multi-level non-volatile memory and neuromorphic computing applications. More importantly, we directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO2 layer that is responsible for the switching. Our work deepens our understanding of the resistance switching mechanism behind oxide-based memristive devices and paves the way for further device performance optimization for a broad spectrum of applications.« less

  6. Interface engineered HfO2-based 3D vertical ReRAM

    NASA Astrophysics Data System (ADS)

    Hudec, Boris; Wang, I.-Ting; Lai, Wei-Li; Chang, Che-Chia; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária; Hou, Tuo-Hung

    2016-06-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 104 s and excellent switching stability at 400 K. Endurance of 107 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.

  7. Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2-x /Pt memory

    NASA Astrophysics Data System (ADS)

    Ran, Jiang; Xianghao, Du; Zuyin, Han

    2016-08-01

    It is investigated for the effect of a ferroelectric Si:HfO2 thin film on the resistive switching in a stacked Pt/Si:HfO2/highly-oxygen-deficient HfO2-x /Pt structure. Improved resistance performance was observed. It was concluded that the observed resistive switching behavior was related to the modulation of the width and height of a depletion barrier in the HfO2-x layer, which was caused by the Si:HfO2 ferroelectric polarization field effect. Reliable switching reproducibility and long data retention were observed in these memory cells, suggesting their great potential in non-volatile memories applications with full compatibility and simplicity. Project supported by the National Natural Science Foundation of China (No. 11374182), the Natural Science Foundation of Shandong Province (No. ZR2012FQ012), and the Jinan Independent Innovation Projects of Universities (No. 201303019).

  8. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  9. Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

    2016-08-01

    The resistive switching phenomena of HfO2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of resistive random access memory (ReRAM) devices. In the fabricated Pt/HfO2/TiN memory cells, bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 μA and 4 μA, respectively, at V READ = 1 V. Regarding the resistive switching performance, stable resistive switching (RS) performance was observed under 40 repetitive dc cycles with small variations of set/reset voltages and the currents and good retention characteristics of over 105 s in both the low-resistance state (LRS) and the high-resistance state (HRS). These results show the possibility of using MOCVDgrown HfO2 films as a promising resistive switching materials for ReRAM applications.

  10. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    PubMed Central

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-01-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later. PMID:28252106

  11. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    NASA Astrophysics Data System (ADS)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I–V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

  12. Broadband and wide-angle light harvesting by ultra-thin silicon solar cells with partially embedded dielectric spheres.

    PubMed

    Yang, Zhenhai; Shang, Aixue; Qin, Linling; Zhan, Yaohui; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-04-01

    We propose a design of crystalline silicon thin-film solar cells (c-Si TFSCs, 2 μm-thick) configured with partially embedded dielectric spheres on the light-injecting side. The intrinsic light trapping and photoconversion are simulated by the complete optoelectronic simulation. It shows that the embedding depth of the spheres provides an effective way to modulate and significantly enhance the optical absorption. Compared to the conventional planar and front sphere systems, the optimized partially embedded sphere design enables a broadband, wide-angle, and strong optical absorption and efficient carrier transportation. Optoelectronic simulation predicts that a 2 μm-thick c-Si TFSC with half-embedded spheres shows an increment of more than 10  mA/cm2 in short-circuit current density and an enhancement ratio of more than 56% in light-conversion efficiency, compared to the conventional planar counterparts.

  13. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    PubMed Central

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-01-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors. PMID:26311131

  14. Damage evaluation in graphene underlying atomic layer deposition dielectrics.

    PubMed

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A

    2015-08-27

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  15. Damage evaluation in graphene underlying atomic layer deposition dielectrics

    NASA Astrophysics Data System (ADS)

    Tang, Xiaohui; Reckinger, Nicolas; Poncelet, Olivier; Louette, Pierre; Ureña, Ferran; Idrissi, Hosni; Turner, Stuart; Cabosart, Damien; Colomer, Jean-François; Raskin, Jean-Pierre; Hackens, Benoit; Francis, Laurent A.

    2015-08-01

    Based on micro-Raman spectroscopy (μRS) and X-ray photoelectron spectroscopy (XPS), we study the structural damage incurred in monolayer (1L) and few-layer (FL) graphene subjected to atomic-layer deposition of HfO2 and Al2O3 upon different oxygen plasma power levels. We evaluate the damage level and the influence of the HfO2 thickness on graphene. The results indicate that in the case of Al2O3/graphene, whether 1L or FL graphene is strongly damaged under our process conditions. For the case of HfO2/graphene, μRS analysis clearly shows that FL graphene is less disordered than 1L graphene. In addition, the damage levels in FL graphene decrease with the number of layers. Moreover, the FL graphene damage is inversely proportional to the thickness of HfO2 film. Particularly, the bottom layer of twisted bilayer (t-2L) has the salient features of 1L graphene. Therefore, FL graphene allows for controlling/limiting the degree of defect during the PE-ALD HfO2 of dielectrics and could be a good starting material for building field effect transistors, sensors, touch screens and solar cells. Besides, the formation of Hf-C bonds may favor growing high-quality and uniform-coverage dielectric. HfO2 could be a suitable high-K gate dielectric with a scaling capability down to sub-5-nm for graphene-based transistors.

  16. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    NASA Astrophysics Data System (ADS)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  17. Investigations on new carbon-based nanohybrids combining carbon nanotubes, HfO2 and ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Rauwel, P.; Galeckas, A.; Salumaa, M.; Aasna, A.; Ducroquet, F.; Rauwel, E.

    2017-02-01

    In this work, we present two types of hybrid materials. The first hybrid material is a combination of carbon nanotubes (CNT) with HfO2 nanoparticles. The latter constituent on its own exhibits unusual visible photoluminescence, which is in stark contrast to non-luminescent HfO2 in the bulk form. The small size of HfO2 nanoparticles, 2.6 nm in average, suggests surface-defect related origin of the observed photoluminescence. The other hybrid material is CNT-ZnO with the embedded ZnO nanoparticles ranging from 50nm to 100nm in size. ZnO represents a direct bandgap semiconductor renowned as highly-luminescent in a broad spectral range. The visible region is attributed to luminescence involving deep-level defects, and hence depends on the synthesis conditions. In this study we compare the morphology of the two hybrid materials with transmission electron microscopy. We further compare the photoluminescence properties and the influence of the CNT coupling on enhancing or suppressing defect related emissions. Finally, we present a novel hybrid material CNT-HfO2 capable of producing a photocurrent under zero bias.

  18. Characterization and application of HfO2 - SiO2 mixtures produced by ion-beam sputtering technology

    NASA Astrophysics Data System (ADS)

    Kičas, S.; BatavičiÅ«tÄ--, GintarÄ--; Juškevičius, Kestutis; Tolenis, Tomas; Drazdys, Ramutis; Buzelis, Rytis; Melninkaitis, Andrius

    2013-11-01

    In the past years the usage of mixed oxides coatings lead to an important improvement of laser damage threshold and quality of optical elements. In this study influence of post treatment procedure - ex-situ annealing - is examined in terms of quality, optical constants and laser induced damage threshold (LIDT) of mixed HfO2 and SiO2 coatings. Monolayer thin films containing different fractions of HfO2 are deposited with ion beam sputtering technology (IBS.) All samples are post annealed at different temperatures and optimal regimes are defined. Refractive index and absorption coefficient dispersion is evaluated from transmission spectra measurements. Surface roughness of all samples is characterized before and after deposition and annealing, using atomic force microscopy (AFM). Microstructural changes are identified from changes in surface topography. Further, optical resistance was characterized by 5.7 ns duration pulses for 355 nm wavelength laser radiation, performing 1-on-1 sample exposure tests with high resolution micro-focusing approach for monolayer samples and S-on-1 tests for multilayer reflectors. Morphology of damaged sites was analyzed through optical microscopy. Finally, conclusions about annealing effect for mixed HfO2 and SiO2 monolayer and multilayer coatings are made.

  19. Feature Modeling of HfO2 Atomic Layer Deposition Using HfCl4/H2O

    NASA Astrophysics Data System (ADS)

    Stout, Phillip J.; Adams, Vance; Ventzek, Peter L. G.

    2003-03-01

    A Monte Carlo based feature scale model (Papaya) has been applied to atomic layer deposition (ALD) of HfO2 using HfCl_4/H_20. The model includes physical effects of transport to surface, specular and diffusive reflection within feature, adsorption, surface diffusion, deposition and etching. Discussed will be the 3D feature modeling of HfO2 deposition in assorted features (vias and trenches). The effect of feature aspect ratios, pulse times, cycle number, and temperature on film thickness, feature coverage, and film Cl fraction (surface/bulk) will be discussed. Differences between HfO2 ALD on blanket wafers and in features will be highlighted. For instance, the minimum pulse times sufficient for surface reaction saturation on blanket wafers needs to be increased when depositing on features. Also, HCl products created during the HfCl4 and H_20 pulses are more likely to react within a feature than at the field, reducing OH coverage within the feature (vs blanket wafer) thus limiting the maximum coverage attainable for a pulse over a feature.

  20. Role of HfO2/SiO2 thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

    DOE PAGES

    Papernov, Semyon; Kozlov, Alexei A.; Oliver, James B.; ...

    2016-07-15

    Here, the role of thin-film interfaces in the near-ultraviolet (near-UV) absorption and pulsed laser-induced damage was studied for ion-beam-sputtered and electron-beam-evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similarmore » to a single-layer HfO2 film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces as compared to HfO2 film material. The relevance of obtained absorption data to coating near-UV, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. The results are explained through the similarity of interfacial film structure with structure formed during the codeposition of HfO2 and SiO2 materials.« less

  1. Photoluminescence of rare earth3+ doped uniaxially aligned HfO2 nanotubes prepared by sputtering with electrospun polyvinylpyrolidone nanofibers as templates

    NASA Astrophysics Data System (ADS)

    Liu, L. X.; Ma, Z. W.; Xie, Y. Z.; Su, Y. R.; Zhao, H. T.; Zhou, M.; Zhou, J. Y.; Li, J.; Xie, E. Q.

    2010-01-01

    Rare earth (RE) ions (Eu3+,Tb3+) doped uniaxially aligned HfO2 nanotubes were prepared by radio frequency sputtering with electrospun polyvinylpyrolidone (PVP) nanofiber templates. The as-sputtered samples were annealed at different temperatures (500-1000 °C) in O2 ambient in order to remove their PVP cores and make the HfO2 shells well crystallized. Morphologies and crystal configuration of the samples were investigated by optical microscope, scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. The nanotubes have uniform intact structure with an average diameter of 200 nm and a wall thickness of about 25 nm. Photoluminescence (PL) properties of the RE doped nanotubes have been studied in detail. The emission peaks of the aligned HfO2:Eu and HfO2:Tb nanotubes could correspond to the D50→F7J (J =0-2) transitions of Eu3+ and the D54→F7J (J =3-6) transitions of Tb3+, respectively. The PL intensities of the HfO2:RE3+ nanotubes were higher by several orders of magnitude than that of the films. This enhancement in the PL could be ascribed to the high density of surface states of HfO2:RE3+ nanotubes.

  2. Al2O3 passivation effect in HfO2·Al2O3 laminate structures grown on InP substrates.

    PubMed

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-04-07

    The passivation effect of an Al2O3 layer on electrical properties were investigated in HfO2--Al2O3 laminate structures grown on InP substrate by atomic layer deposition (ALD). The chemical state using HR-XPS showed that interfacial reactions were dependent on the presence of the Al2O3 passivation layer and its sequence in the HfO2--Al2O3 laminate structures. The Al2O3/HfO2/Al2O3 structure showed the best electrical characteristics, due to the interfacial reaction, compared with those of different stacking structures. The top Al2O3 layer suppressed the interdiffusion of oxidizing species into the HfO2 films, while the bottom Al2O3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was effectively suppressed in the Al2O3/HfO2/Al2O3/InP structure than that of HfO2-on-InP system. Moreover, conductance data revealed that the Al2O3/ layer on InP reduces the midgap traps to 2.6 × 10(12) eV(-1)cm(-2) (compared with that of HfO2/InP = 5.4 × 10(12) eV(-1)cm(-2)). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  3. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    NASA Astrophysics Data System (ADS)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  4. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.

    PubMed

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-05-16

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

  5. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

    PubMed Central

    Niu, Gang; Calka, Pauline; Auf der Maur, Matthias; Santoni, Francesco; Guha, Subhajit; Fraschke, Mirko; Hamoumou, Philippe; Gautier, Brice; Perez, Eduardo; Walczyk, Christian; Wenger, Christian; Di Carlo, Aldo; Alff, Lambert; Schroeder, Thomas

    2016-01-01

    Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability. PMID:27181525

  6. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    NASA Astrophysics Data System (ADS)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  7. Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2- x /Hf Stack

    NASA Astrophysics Data System (ADS)

    Ma, Haili; Feng, Jie; Lv, Hangbing; Gao, Tian; Xu, Xiaoxin; Luo, Qing; Gong, Tiancheng; Yuan, Peng

    2017-02-01

    In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2- x /Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2- x structure shows bidirectional memory switching properties with symmetrical I-V curve in low resistance state. After introducing a 28-nm-thick Ta2O5 layer on HfO2- x layer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of 4 × 103 observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta2O5 rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.

  8. Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

    NASA Astrophysics Data System (ADS)

    Trinh, Hai-Dang; Lin, Yueh-Chin; Nguyen, Minh-Thuy; Nguyen, Hong-Quan; Duong, Quoc-Van; Luc, Quang-Ho; Wang, Shin-Yuan; Nguyen, Manh-Nghia; Yi Chang, Edward

    2013-09-01

    In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10-4 A/cm-2. The Dit value of smaller than 1012 eV-1cm-2 has been obtained using conduction method.

  9. Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

    NASA Astrophysics Data System (ADS)

    Tang, M. H.; Sun, Z. H.; Zhou, Y. C.; Sugiyama, Y.; Ishiwara, H.

    2009-05-01

    The metal-ferroelectric-insulator-semiconductor (MFIS) structure diodes with SrBi2Ta2O9 (SBT) as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated. The electrical properties of MFIS structure were investigated for different HfO2 buffer layer thickness. The experimental results show that the memory window extended significantly as the HfO2 layer thickness increased from 6 to 10 nm. It is also observed that the leakage current was reduced to about 10-10 A at applied voltage of 4 V, and the high and low capacitances remained distinguishable for over 8 h even if we extrapolate the measured data to 10 years.

  10. O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

    PubMed

    Lucovsky, Gerald; Miotti, Leonardo; Bastos, Karen Paz

    2012-06-01

    Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect states in nano-crystalline transition metal oxides, e.g., HfO2, and the noncrystalline dielectrics, SiO2, Si3N4 and Si-oxynitride alloys. Two-electron multiplet theory been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. Comparisons between theory and experiment have used Tanabe-Sugano energy level diagrams for determining the symmetries and relative energies of intra-d-state transitions for an equivalent d2 ground state occupancy. Trap-assisted-tunneling, Poole-Frenkel hopping transport, and the negative bias temperature instability have been explained in terms of injection and/or trapping into O-atom and N-atom vacancy sites, and applied to gate dielectric, and metal-insulator-metal structures.

  11. HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control

    NASA Astrophysics Data System (ADS)

    Qi, Li-Qian; Pan, Di-Ya; Li, Jun-Qing; Liu, Li-Hu; Sun, Hui-Yuan

    2017-03-01

    New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2 nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.

  12. Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

    NASA Astrophysics Data System (ADS)

    Sahoo, S. K.; Misra, D.

    2012-06-01

    The temperature and field dependent leakage current in HfO2/SiO2 gate stack for in situ steam grown and chemical interfacial layers (ILs) are studied in the temperature range of 20 °C to 105 °C. Poole-Frenkel mechanism in high field whereas Ohmic conduction in low field region are dominant for both devices. Leakage current decreases whereas both trap energy level (ϕt) and activation energy (Ea) increase for chemically grown IL devices. The trap level energy, (ϕt) ˜ 0.2 eV, indicates that doubly charged oxygen vacancies (V2-) are the active electron traps which contribute to the leakage current in these gate stacks.

  13. Characterization of HfO2-SiO2 rugate multilayers deposited by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Rauhut, R.; Nehls, K.; Mechold, L.

    2014-10-01

    Ion beam sputtering (IBS) is a deposition technique being well known for resulting in very dense and damage resistant coatings due to high kinetic energies of the sputtered atoms. While different layers are deposited homogeneously, abrupt interfaces between the materials are the most susceptible part of the stack. Therefore we aim for an improvement of the laser damage threshold by sputtering material mixtures. Using a target with high- and low-index material next to each other, arbitrary refractive indices can be realized by adjusting the target axis. Our material system of choice is HfO2- SiO2, already yielding good results with non-rugate coatings. A comparison in terms of laser damage threshold between these designs and varying refractive index coatings will be shown.

  14. HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control.

    PubMed

    Qi, Li-Qian; Pan, Di-Ya; Li, Jun-Qing; Liu, Li-Hu; Sun, Hui-Yuan

    2017-03-17

    New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2 nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.

  15. The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming; Harder, Bryan James

    2014-01-01

    Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

  16. The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Treverrow, B.; Ross, A. E.; Falconer, I. S.; Kondyurin, A.; McCulloch, D. G.; Partridge, J. G.; McKenzie, D. R.; Bilek, M. M. M.

    2015-06-01

    In conventional reactive magnetron sputtering, target poisoning frequently leads to an instability that requires the reactive gas flow rate to be actively regulated to maintain a constant composition of the deposited layers. Here we demonstrate that the pulse length in high power impulse magnetron sputtering (HiPIMS) is important for determining the surface conditions on the target that lead to poisoning. By increasing the pulse length, a smooth transition can be achieved from a poisoned target condition (short pulses) to a quasi-metallic target condition (long pulses). Appropriate selection of pulse length eliminates the need for active regulation, enabling stable reactive magnetron sputter deposition of stoichiometric amorphous hafnium oxide (HfO2) from a Hf target. A model is presented for the reactive HiPIMS process in which the target operates in a partially poisoned mode with a distribution of oxide on its surface that depends on the pulse length.

  17. Well-Controlled Dielectric Nanomeshes by Colloidal Nanosphere Lithography for Optoelectronic Enhancement of Ultrathin Cu(In,Ga)Se2 Solar Cells.

    PubMed

    Yin, Guanchao; Song, Min; Duan, Shengkai; Manley, Phillip; Greiner, Dieter; Kaufmann, Christian A; Schmid, Martina

    2016-11-23

    Ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells pose challenges of incomplete absorption and back contact recombination. In this work, we applied the simple collodial nanosphere lithography and fabricated 2D SiO2 nanomeshes (NMs), which simultaneously benefit ultrathin CIGSe solar cells electrically and optically. Electrically, the NMs are capable of passivating the back contact recombination and increasing the minimum bandgap of absorbers. Optically, the parasitic absorption in Mo as a main optical loss is reduced. Consequently, the SiO2 NMs give rise to an increase of 3.5 mA/cm(2) in short circuit current density (Jsc) and of 57 mV in open circuit voltage increase (Voc), leading to an absolute efficiency enhancement as high as 2.6% (relatively 30%) for CIGSe solar cells with an absorber thickness of only 370 nm and a steep back Ga/[Ga + In] grading.

  18. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  19. Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Ajayan, J.

    2016-09-01

    This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications. Due to gate engineering in junctionless MOSFET, graded potential is obtained and results in higher electron velocity of about 31% for HfO2 than SiO2 in the channel region, which in turn improves the carrier transport efficiency. The simulation is done using sentaurus TCAD, ON current, OFF current, ION/IOFF ratio, DIBL, gain, transconductance and transconductance generation factor parameters are analysed. When using HfO2, DIBL shows a reduction of 61.5% over SiO2. The transconductance and transconductance generation factor shows an improvement of 44% and 35% respectively. The gain and output resistance also shows considerable improvement with high-k dielectrics. Using this device, inverter circuit is implemented with different high-k dielectric material and delay have been decreased by 4% with HfO2 when compared to SiO2. In addition, a significant reduction in power dissipation of the inverter circuit is obtained with high-k dielectric Dual Metal Surround Gate Junctionless Transistor than SiO2 based device. From the analysis, it is found that HfO2 will be a better alternative for the future nanoscale device.

  20. Chemical states and electronic structure of a HfO(-2) / Ge(001) interface

    SciTech Connect

    Seo, Kang-ill; McIntyre, Paul C.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; Saraswat, Krishna C.; /Stanford U., Elect. Eng. Dept.

    2005-05-04

    We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

  1. Fabrication of BaTiO3-Based Dielectrics for Ultrathin-Layer Multilayer Ceramic Capacitor Application by a Modified Coating Approach

    NASA Astrophysics Data System (ADS)

    Tian, Zhibin; Wang, Xiaohui; Zhang, Yichi; Song, Tae-Ho; Hur, Kang Heon; Li, Longtu

    2011-02-01

    The development of multilayer ceramic capacitor (MLCC) with base metal electrode (BME) requires precise controlling of the microstructure in a very thin dielectric layer (<1 µm). In this paper, a modified coating approach for high coverage of BaTiO3 powder for further MLCC application has been developed. The well dispersed and coated BaTiO3 powders are prepared and the relative mechanism has been discussed. Furthermore, the ultrafine grained X7R dielectric ceramics were produced by both conventional mixing and modified coating methods. Compared with the conventional mixing method, the ceramics prepared by the coating approach exhibited better TCC (the temperature coefficient of capacitance) performance, with dielectric constant over 2000 and grain size below 150 nm. In addition, it is found through the coating method the content of additives can be reduced to a relatively smaller amount than that required in conventional mixing method.

  2. Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

    NASA Astrophysics Data System (ADS)

    Son, Seung-Woo; Park, Jung-Ho; Baek, Ji-Min; Kim, Jin Su; Kim, Do-Kywn; Shin, Seung Heon; Banerjee, S. K.; Lee, Jung-Hee; Kim, Tae-Woo; Kim, Dae-Hyun

    2016-09-01

    In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2 nm) bi-layer stack by ALD. The fabricated device with Lg = 4 μm exhibits a record maximum transconductance (gm_max) in excess of 520 μS/μm at >1 μm region, and reasonably good electrostatic integrity, such as SS = 110 mV/decade and DIBL = 43 mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS = 100-110 mV/decade, VT = -0.25 V to -0.2 V and DIBL = 40-50 mV/V, as Lg decreases from 10 μm to 4 μm. Furthermore, we have explored the impact of source resistance (RS) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (gm_ext) and intrinsic transconductance (gm_int) as a function of Lg.

  3. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Syogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-09-01

    In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

  4. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    NASA Astrophysics Data System (ADS)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  5. Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

    NASA Astrophysics Data System (ADS)

    Suri, M.; Bichler, O.; Hubert, Q.; Perniola, L.; Sousa, V.; Jahan, C.; Vuillaume, D.; Gamrat, C.; DeSalvo, B.

    2013-01-01

    In this work, we will focus on the use of phase change memory (PCM) to emulate synaptic behavior in emerging neuromorphic system-architectures. In particular, we will show that the performance and energy-efficiency of large scale neuromorphic systems can be improved by engineering individual PCM devices used as synapses. This is obtained by adding a thin HfO2 interface layer to standard GST PCM devices, allowing for the lowering of the Set/Reset currents and the increase of the number of intermediate resistance states (or synaptic weights) in the synaptic potentiation characteristics. The experimentally obtained potentiation characteristics of such PCM devices are used to simulate a 2-layer ultra-dense spiking neural network (SNN) and to perform a complex visual pattern extraction from a test case based on real world data (i.e. cars passing on a 6-lane freeway). The total power dissipated in the learning mode, for the pattern extraction experiment is estimated to be as low as 60 μW. Average detection rate of cars is found to be greater than 90%.

  6. In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

    NASA Astrophysics Data System (ADS)

    Devloo-Casier, K.; Dendooven, J.; Ludwig, K. F.; Lekens, G.; D'Haen, J.; Detavernier, C.

    2011-06-01

    The initial growth of HfO2 was studied by means of synchrotron based in situ x-ray fluorescence (XRF) and grazing incidence small angle x-ray scattering (GISAXS). HfO2 was deposited by atomic layer deposition (ALD) using tetrakis(ethylmethylamino)hafnium and H2O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

  7. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

    NASA Astrophysics Data System (ADS)

    Takahashi, Kazuhiro; Aizawa, Koji; Park, Byung-Eun; Ishiwara, Hiroshi

    2005-08-01

    Metal-ferroelectric-insulator-semiconductor (MFIS) diodes and p-channel MFIS field-effect transistors (FETs) were fabricated and their electrical properties were characterized. These MFIS structures were formed using HfO2 as an insulating buffer layer, and SrBi2Ta2O9 (SBT) and (Bi,La)4Ti3O12 (BLT) as ferroelectric films. HfO2 buffer layers of about 8 nm physical thickness were deposited by ultrahigh-vacuum (UHV) electron-beam evaporation, then ferroelectric films of about 400 nm thickness were deposited by sol-gel spin coating. The fabricated p-channel MFIS-FETs with the SBT/HfO2 gate structure exhibited a drain current on/off ratio larger than 103 even after 30 days had elapsed. It was also found that the degradation of ferroelectricity was not pronounced even after applying 2.2× 1011 bipolar pulses.

  8. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    NASA Astrophysics Data System (ADS)

    Clima, S.; Wouters, D. J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G.

    2014-03-01

    The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 μC/cm2. We show the correlation between the computed polarization reversal barrier and the experimental coercive fields.

  9. Transition from isolated submicrometer pits to integral ablation of HfO2 and SiO2 films under subpicosecond irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Hu; Qi, Hongji; Zhao, Jiaoling; Wang, Bin; Shao, Jianda

    2017-03-01

    Damage behavior of HfO2 and SiO2 films under subpicosecond irradiation is investigated experimentally and theoretically in this work. The typical damage phenomenon is the transition from isolated submicrometer pits to integral ablation at transitive threshold. The experimental damage thresholds for both coatings are consistent with the theoretical calculation. The rate equation considering the feedback effect of electron number density is applied to calculate the deposited energy density, which illustrates the evolution of damage morphology.

  10. Band alignment of HfO2/In0.18Al0.82N determined by angle-resolved x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Owen, Man Hon Samuel; Bhuiyan, Maruf Amin; Zhang, Zheng; Pan, Ji Sheng; Tok, Eng Soon; Yeo, Yee-Chia

    2014-07-01

    The band-alignment of atomic layer deposited (ALD)-HfO2/In0.18Al0.82N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO2/In0.18Al0.82N interface was investigated, and the potential variation across the interface was taken into account in the band alignment calculation. It is observed that the binding energies for N 1s and Al 2p in In0.18Al0.82N decreases and the corresponding extracted valence band offsets increases with increasing θ (i.e., closer to the HfO2/In0.18Al0.82N interface), as a result of an upward energy band bending towards the HfO2/In0.18Al0.82N interface. The resultant valence band offset and the conduction band offset for the ALD-HfO2/In0.18Al0.82N interface calculated was found to be 0.69 eV and 1.01 eV, respectively.

  11. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    NASA Astrophysics Data System (ADS)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  12. Role of barrier layer on dielectric function of graphene double layer system at finite temperature

    NASA Astrophysics Data System (ADS)

    Patel, Digish K.; Ambavale, Sagar K.; Prajapati, Ketan; Sharma, A. C.

    2016-05-01

    We have theoretically investigated the static dielectric function of graphene double layer system (GDLS) at finite temperatures within the random phase approximation. GDLS has been suspended on a substrate and barrier layer of three different materials; h-BN, Al2O3 and HfO2 has been introduced between two graphene sheets of GDLS. We have reported dependence of the overall dielectric function of GDLS on interlayer distance and the effect of the dielectric environment at finite temperatures. Results show close relation between changing environment and behavior of dielectric constant of GDLS.

  13. Probing/Manipulating the Interfacial Atomic Bonding between High k Dielectrics and InGaAs for Ultimate CMOS

    DTIC Science & Technology

    2015-04-24

    prepared by atomic layer deposition (ALD) with the precursors as tetrakis[ethylmethylamino] Hafnium (TEMAHf) and water. Samples were kept under ultra-high...probed by synchrotron radiation photoemission. The dielectric film was prepared by atomic layer deposition (ALD) with the precursors as tetrakis...in-situ HfO2 on In0.53Ga0.47As(001)-4x2 probed by synchrotron radiation photoemission. The dielectric film was prepared by atomic layer deposition

  14. The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

    DOE PAGES

    Ristau, Detlev; Papernov, S.; Kozlov, A. A.; ...

    2015-11-23

    The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered and electron-beam–evaporated coatings comprised from HfO2 and SiO2 thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage-threshold measurements were performed for a one-wave (355-nm wavelength) thick, HfO2 single-layer film and for a film containing seven narrow HfO2 layers separated by SiO2 layers. The seven-layer film was designed to have a total optical thickness of HfO2 layers, equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO2more » film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thin-film interfaces, as compared to HfO2 film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO2 film in both sputtered and evaporated coatings. Here, the results are explained through the similarity of interfacial film structure with structure formed during the co-deposition of HfO2 and SiO2 materials.« less

  15. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

    NASA Astrophysics Data System (ADS)

    Martínez, F. L.; Toledano-Luque, M.; Gandía, J. J.; Cárabe, J.; Bohne, W.; Röhrich, J.; Strub, E.; Mártil, I.

    2007-09-01

    Thin films of hafnium oxide (HfO2) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  16. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    NASA Astrophysics Data System (ADS)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  17. Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films.

    PubMed

    Pothiraja, Ramasamy; Milanov, Andrian; Parala, Harish; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-01-28

    New Hf and Zr malonate complexes have been synthesized by the reaction of metal amides with different malonate ligands (L = dimethyl malonate (Hdmml), diethyl malonate (Hdeml), di-tert-butyl malonate (Hdbml) and bis(trimethylsilyl) malonate (Hbsml)). Homoleptic eight-coordinated monomeric compounds of the type ML4 were obtained for Hf with all the malonate ligands employed. In contrast, for Zr only Hdmml and Hdeml yielded the eight-coordinated monomeric compounds of the type ML4, while using the bulky Hdbml and Hbsml ligands resulted into mixed alkoxo-malonato six-coordinated compounds of the type [ML2(OR)2]. Single crystal X-ray diffraction studies of all the compounds are presented and discussed, and they are found to be monomeric. The complexes are solids and in solution, they retain their monomeric nature as evidenced by NMR measurements. Compared to the classical beta-diketonate complexes, [M(acac)4] and [M(thd)4] (M = Hf, Zr; acac: acetylacetonate; thd: tetramethylheptadione), the new malonate compounds are more volatile, decompose at lower temperatures and have lower melting points. In particular, the homoleptic diethyl malonate complexes of Hf and Zr melt at temperatures as low as 62 degrees C. In addition, the compounds are very stable in air and can be sublimed quantitatively. The promising thermal properties makes these compounds interesting for metal-organic chemical vapor deposition (MOCVD). This was demonstrated by depositing HfO2 and ZrO2 thin films successfully with two representative Hf and Zr complexes.

  18. Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

    NASA Astrophysics Data System (ADS)

    Espinal, Y.; Kesim, M. T.; Misirlioglu, I. B.; Trolier-McKinstry, S.; Mantese, J. V.; Alpay, S. P.

    2014-12-01

    The dielectric and pyroelectric properties of c-domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

  19. Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

    PubMed Central

    Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

    2015-01-01

    The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controlled metal–insulator transitions have been challenging because of the limited number of electrons accumulated by gate dielectrics, or possible electrochemical reaction in ionic liquid gate. Here we achieve a positive-bias gate-controlled metal–insulator transition near the transition temperature. A significant number of electrons were accumulated via a high-permittivity TiO2 gate dielectric with subnanometre equivalent oxide thickness in the inverse-Schottky-gate geometry. An abrupt transition in the VO2 channel is further exploited, leading to a significant current modulation far beyond the capacitive coupling. This solid-state operation enables us to discuss the electrostatic mechanism as well as the collective nature of gate-controlled metal–insulator transitions, paving the pathway for developing functional field effect transistors. PMID:26657761

  20. Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high- k LaTiON gate dielectric

    NASA Astrophysics Data System (ADS)

    Xu, H. X.; Xu, J. P.; Li, C. X.; Chan, C. L.; Lai, P. T.

    2010-06-01

    Ge Metal-Oxide-Semiconductor (MOS) capacitors with LaON gate dielectric incorporating different Ti contents are fabricated and their electrical properties are measured and compared. It is found that Ti incorporation can increase the dielectric permittivity, and the higher the Ti content, the larger is the permittivity. However, the interfacial and gate-leakage properties become poorer as the Ti content increases. Therefore, optimization of Ti content is important in order to obtain a good trade-off among the electrical properties of the device. For the studied range of the Ti/La2O3 ratio, a suitable Ti/La2O3 ratio of 14.7% results in a high relative permittivity of 24.6, low interface-state density of 3.1×1011 eV-1 cm-2, and relatively low gate-leakage current density of 2.0×10-3 A cm-2 at a gate voltage of 1 V.

  1. Annealing Behavior of Atomic Layer Deposited HfO2 Films Studied by Synchrotron X-ray Reflectivity and Grazing Incidence Small Angle Scattering

    SciTech Connect

    Green, M.; Allen, A; Jordan-Sweet, J; Ilavsky, J

    2009-01-01

    New results are presented for the annealing behavior of ultrathin complementary-metal-oxide-semiconductor (CMOS) gate dielectric HfO{sub 2} films grown by atomic layer deposition (ALD). A series of ALD HfO{sub 2} dielectric films has been studied by a combination of x-ray reflectivity (XRR) and grazing-incidence small-angle x-ray scattering (GISAXS) measurements. By using these techniques together, we have shown that the surface, interfaces, and internal structure of thin ALD films can be characterized with unprecedented sensitivity. Changes in film thickness, film roughness, or diffuseness of the film/substrate interface as measured by XRR are correlated with the corresponding changes in the internal film nanostructure, as measured by GISAXS. Although the films are dense, an internal film structure is shown to exist, attributed primarily to {approx} 2 nm 'missing island' porosity features close to the substrate; these are most likely associated with coalescence defects as a result of initial ALD growth, as they are not observed in the upper regions of the film. Some 8-9 nm heterogeneities are also present, which may indicate a widespread modulation in the film density pervading the entire film volume, and which likely also give rise to surface roughness. Comparison of the data between different scattering geometries and among a carefully designed sequence of samples has enabled important insights to be derived for the annealing behavior of the ALD HfO{sub 2} films. The main effects of single, brief, high temperature excursions to above 900C are to anneal out some of the fine voids and reduce the mean roughness and interfacial diffuseness of the film. These changes are indicative of densification. However, depending on the film thickness, the annealing behavior at temperatures between 650 and 800C is quite different for single excursion and cyclic anneals. Particularly for thin, just-coalesced films, XRR indicates marked increases in the film thickness and in the

  2. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    PubMed Central

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

  3. CMUTs with high-K atomic layer deposition dielectric material insulation layer.

    PubMed

    Xu, Toby; Tekes, Coskun; Degertekin, F

    2014-12-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

  4. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    NASA Astrophysics Data System (ADS)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  5. Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

    NASA Astrophysics Data System (ADS)

    Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

    2013-03-01

    Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

  6. Multi-layer high- κ interpoly dielectric for floating gate flash memory devices

    NASA Astrophysics Data System (ADS)

    Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jin

    2008-04-01

    We present a systematic simulation and experimental study of tunneling leakage current of the interpoly dielectric (IPD) layer in a floating gate (FG) type flash memory. IPD layers with different structural and material combinations such as HfLaO and 4% Tb-doped HfO 2 were studied. It is shown that compared with a conventional Al 2O 3-HfO 2-Al 2O 3 high-low-high barrier structure, the HfO 2-Al 2O 3-HfO 2 multilayer IPD stack with a low-high-low barrier structure has a lower leakage current due to the longer effective electron tunneling distance. Results also show that multilayer IPD structure has advantage of better thermal stability compared to the single layer IPD. Further work with simulations and experiments results suggest that the presence of a thin interfacial layer between polysilicon FG and IPD can increase the magnitude of leakage current by two or three orders. Nitridation of polysilicon floating gate reduced the leakage current by around two orders of magnitude at a constant equivalent oxide thickness. This is due to the elimination of the interfacial layer between polysilicon and high- κ IPD.

  7. On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

    NASA Astrophysics Data System (ADS)

    Saadi, M.; Gonon, P.; Vallée, C.; Mannequin, C.; Grampeix, H.; Jalaguier, E.; Jomni, F.; Bsiesy, A.

    2016-03-01

    Resistance switching is studied in HfO2 as a function of the anode metal (Au, Cu, and Ag) in view of its application to resistive memories (resistive random access memories, RRAM). Current-voltage (I-V) and current-time (I-t) characteristics are presented. For Au anodes, resistance transition is controlled by oxygen vacancies (oxygen-based resistive random access memory, OxRRAM). For Ag anodes, resistance switching is governed by cation injection (Conducting Bridge random access memory, CBRAM). Cu anodes lead to an intermediate case. I-t experiments are shown to be a valuable tool to distinguish between OxRRAM and CBRAM behaviors. A model is proposed to explain the high-to-low resistance transition in CBRAMs. The model is based on the theory of low-temperature oxidation of metals (Cabrera-Mott theory). Upon electron injection, oxygen vacancies and oxygen ions are generated in the oxide. Oxygen ions are drifted to the anode, and an interfacial oxide is formed at the HfO2/anode interface. If oxygen ion mobility is low in the interfacial oxide, a negative space charge builds-up at the HfO2/oxide interface. This negative space charge is the source of a strong electric field across the interfacial oxide thickness, which pulls out cations from the anode (CBRAM case). Inversely, if oxygen ions migration through the interfacial oxide is important (or if the anode does not oxidize such as Au), bulk oxygen vacancies govern resistance transition (OxRRAM case).

  8. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    NASA Astrophysics Data System (ADS)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  9. Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

    NASA Astrophysics Data System (ADS)

    Wu, Li-Fan; Zhang, Yu-Ming; Lv, Hong-Liang; Zhang, Yi-Men

    2016-10-01

    Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37 × 10-6 A/cm2 and 3.22 × 10-6 A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q ot) value and the interface state density (D it). Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

  10. Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Zhang, Z. H.; Zhong, X. L.; Zhang, Y.; Wang, J. B.; Lu, C. J.; Ye, W. N.; Zhou, Y. C.

    2012-04-01

    Metal-ferroelectric-insulator-silicon (MFIS) structures with SrBi2Ta2O9 as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated by pulsed-laser deposition. The interfaces and memory window of the MFIS structure were investigated. Piezoresponse force microscopy was used to observe the change of domain images in order to investigate the retention characteristics, which demonstrated that the MFIS structure experiences retention loss via a random-walk-type process, identified by a stretched exponential-decay model. The corresponding mechanism was discussed based on the time-dependent depolarization field.

  11. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

    NASA Astrophysics Data System (ADS)

    Lin, T. D.; Chang, W. H.; Chu, R. L.; Chang, Y. C.; Chang, Y. H.; Lee, M. Y.; Hong, P. F.; Chen, Min-Cheng; Kwo, J.; Hong, M.

    2013-12-01

    Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ˜10-8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C-800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ˜104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V . s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively.

  12. Nanosecond pulsed laser damage characteristics of HfO2/SiO2 high reflection coatings irradiated from crystal-film interface.

    PubMed

    Cheng, Xinbin; Jiao, Hongfei; Lu, Jiangtao; Ma, Bin; Wang, Zhanshan

    2013-06-17

    The nano-precursors in the subsurface of Nd:YLF crystal were limiting factor that decreased the laser-induced damage threshold (LIDT) of HfO(2)/SiO(2) high reflection (HR) coatings irradiated from crystal-film interface. To investigate the contribution of electric-field (E-field) to laser damage originating from nano-precursors and then to probe the distribution of vulnerable nano-precursors in the direction of subsurface depth, two 1064 nm HfO(2)/SiO(2) HR coatings having different standing-wave (SW) E-field distributions in subsurface of Nd:YLF c5424181043036123rystal were designed and prepared. Artificial gold nano-particles were implanted into the crystal-film interface prior to deposition of HR coatings to study the damage behaviors in a more reliable way. The damage test results revealed that the SW E-field rather than the travelling-wave (TW) E-field contributed to laser damage. By comparing the SW E-field distributions and LIDTs of two HR coating designs, the most vulnerable nano-precursors were determined to be concentrated in a thin redeposition layer that is within 100 nm from the crystal-film interface.

  13. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  14. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    PubMed

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  15. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    PubMed Central

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-01-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

  16. Optimum Ferroelectric Film Thickness in Metal-Ferroelectric-Insulator-Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

    NASA Astrophysics Data System (ADS)

    Takahashi, Kazuhiro; Aizawa, Koji; Ishiwara, Hiroshi

    2006-06-01

    The optimum ferroelectric film thickness in metal-ferroelectric-insulator-semiconductor (MFIS) structures is investigated, in which 80- to 560-nm-thick (Bi,La)4Ti3O12 (BLT) films are deposited on HfO2 buffer layers using a sol-gel spin-coating method. It is found from electrical characteristics of MFIS diodes as well as MIS diodes that the HfO2 layers act as excellent barriers for suppressing both leakage current and atom interdiffusion when they are annealed in a rapid-thermal-annealing furnace at 900 °C for 1 min in O2 flow. In MFIS diodes, the memory window width in capacitance-voltage (C-V) characteristics is found to increase from 0.2 to 1.6 V, as ferroelectric film thickness increases from 80 to 560 nm. On the basis of these results, the relationships among memory window width, ferroelectric film thickness, and the optimum applied voltage are discussed. Finally, it is shown from the capacitance change measured over 24 h that data retention characteristics are excellent in samples with BLT films thicker than 240 nm.

  17. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-02-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  18. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    PubMed

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-02-16

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  19. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  20. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    NASA Astrophysics Data System (ADS)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  1. Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

    NASA Astrophysics Data System (ADS)

    Xie, Dan; Luo, Yafeng; Han, Xueguang; Ren, Tianling; Liu, Litian

    2009-12-01

    We have investigated the structural and electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with Bi3.15Nd0.85Ti3O12 (BNdT) thin film deposited on Si and hafnium oxide (HfO2)/Si substrates. Microstructural analysis reveals the formation of well-crystallized BNdT perovskite film and good interface between BNdT film and HfO2 buffer layer. Pt/BNdT/HfO2/Si structure exhibits a memory window of 1.12 V at an operation voltage of 3.5 V. The width of memory window for the MFIS structure varies with increasing thickness of HfO2 layer, and 4-nm-thickness is optimum. The results from the fatigue test indicate a slight degradation of the memory window after 1010 switching cycles. These properties are encouraging for the development of ferroelectric memory transistors.

  2. High-dose neutron irradiation performance of dielectric mirrors

    DOE PAGES

    Nimishakavi Anantha Phani Kiran Kumar; Leonard, Keith J.; Jellison, Jr., Gerald Earle; ...

    2015-05-01

    The study presents the high-dose behavior of dielectric mirrors specifically engineered for radiation-tolerance: alternating layers of Al2O3/SiO2 and HfO2/SiO2 were grown on sapphire substrates and exposed to neutron doses of 1 and 4 dpa at 458 10K in the High Flux Isotope Reactor (HFIR). In comparison to previously reported results, these higher doses of 1 and 4 dpa results in a drastic drop in optical reflectance, caused by a failure of the multilayer coating. HfO2/SiO2 mirrors failed completely when exposed to 1 dpa, whereas the reflectance of Al2O3/SiO2 mirrors reduced to 44%, eventually failing at 4 dpa. Transmission electron microscopymore » (TEM) observation of the Al2O3/SiO2 specimens showed SiO2 layer defects which increases size with irradiation dose. The typical size of each defect was 8 nm in 1 dpa and 42 nm in 4 dpa specimens. Buckling type delamination of the interface between the substrate and first layer was typically observed in both 1 and 4 dpa HfO2/SiO2 specimens. Composition changes across the layers were measured in high resolution scanning-TEM mode using energy dispersive spectroscopy. A significant interdiffusion between the film layers was observed in Al2O3/SiO2 mirror, though less evident in HfO2/SiO2 system. Lastly, the ultimate goal of this work is the provide insight into the radiation-induced failure mechanisms of these mirrors.« less

  3. Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Wu, Zhengran; Du, Xianghao; Han, Zuyin; Sun, Weideng

    2015-07-01

    Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention, and reliable endurance, was observed in TiN/Si:HfO2/oxygen-deficient HfO2/TiN memory cells. The enhanced resistance ratio is ascribed to the creation/elimination of an extra barrier in oxygen-deficient HfO2 layer in response to the polarization reversal in the ferroelectric Si:HfO2 layer. Along with the enhanced resistance ratio, the long retention and good endurance make the proposed device a promising candidate for non-volatile resistive memories.

  4. Loss/gain-induced ultrathin antireflection coatings.

    PubMed

    Luo, Jie; Li, Sucheng; Hou, Bo; Lai, Yun

    2016-06-28

    Tradional antireflection coatings composed of dielectric layers usually require the thickness to be larger than quarter wavelength. Here, we demonstrate that materials with permittivity or permeability dominated by imaginary parts, i.e. lossy or gain media, can realize non-resonant antireflection coatings in deep sub-wavelength scale. Interestingly, while the reflected waves are eliminated as in traditional dielectric antireflection coatings, the transmitted waves can be enhanced or reduced, depending on whether gain or lossy media are applied, respectively. We provide a unified theory for the design of such ultrathin antireflection coatings, showing that under different polarizations and incident angles, different types of ultrathin coatings should be applied. Especially, under transverse magnetic polarization, the requirement shows a switch between gain and lossy media at Brewster angle. As a proof of principle, by using conductive films as a special type of lossy antireflection coatings, we experimentally demonstrate the suppression of Fabry-Pérot resonances in a broad frequency range for microwaves. This valuable functionality can be applied to remove undesired resonant effects, such as the frequency-dependent side lobes induced by resonances in dielectric coverings of antennas. Our work provides a guide for the design of ultrathin antireflection coatings as well as their applications in broadband reflectionless devices.

  5. Loss/gain-induced ultrathin antireflection coatings

    PubMed Central

    Luo, Jie; Li, Sucheng; Hou, Bo; Lai, Yun

    2016-01-01

    Tradional antireflection coatings composed of dielectric layers usually require the thickness to be larger than quarter wavelength. Here, we demonstrate that materials with permittivity or permeability dominated by imaginary parts, i.e. lossy or gain media, can realize non-resonant antireflection coatings in deep sub-wavelength scale. Interestingly, while the reflected waves are eliminated as in traditional dielectric antireflection coatings, the transmitted waves can be enhanced or reduced, depending on whether gain or lossy media are applied, respectively. We provide a unified theory for the design of such ultrathin antireflection coatings, showing that under different polarizations and incident angles, different types of ultrathin coatings should be applied. Especially, under transverse magnetic polarization, the requirement shows a switch between gain and lossy media at Brewster angle. As a proof of principle, by using conductive films as a special type of lossy antireflection coatings, we experimentally demonstrate the suppression of Fabry-Pérot resonances in a broad frequency range for microwaves. This valuable functionality can be applied to remove undesired resonant effects, such as the frequency-dependent side lobes induced by resonances in dielectric coverings of antennas. Our work provides a guide for the design of ultrathin antireflection coatings as well as their applications in broadband reflectionless devices. PMID:27349750

  6. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    NASA Astrophysics Data System (ADS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung; Liu, Han-Yin; Ho, Chiu-Sheng

    2013-07-01

    This paper reports Al0.27Ga0.73N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al2O3/HfO2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al2O3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain-source current (IDS, max), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate-drain breakdown/turn-on voltages (BVGD/VON), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al2O3/(HfO2) dielectric layer of the same physical thickness.

  7. Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Pi-Chun Juan, Trevor; Liu, Yu-Wei

    2011-05-01

    Metal-ferroelectric (Ti-substituted BiFeO3)-insulator (HfO2)-semiconductor structures have been fabricated via the cosputtering technique. Ti4+ substitution at the Fe site was investigated through x-ray photoelectron spectra and x-ray diffraction patterns at postannealing temperatures of 500 to 700 °C. The capacitance-voltage memory windows as functions of the insulator film thickness and the dc power for Ti were measured and compared. A memory window of 3.1 V was obtained at a sweep voltage of 8 V under O2-rich conditions. The leakage current and the charge injection effect, especially gate injection, can be greatly improved by Ti substitution. The effects of the postannealing temperature and the substitution amount on the leakage current can be well explained by the defect reaction model.

  8. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

    NASA Astrophysics Data System (ADS)

    Timm, R.; Fian, A.; Hjort, M.; Thelander, C.; Lind, E.; Andersen, J. N.; Wernersson, L.-E.; Mikkelsen, A.

    2010-09-01

    Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

  9. MBE and ALD grown High k Dielectrics Gate Stacks on GaN

    NASA Astrophysics Data System (ADS)

    Chang, Y. C.; Lee, K. Y.; Lee, W. C.; Lin, T. D.; Lee, Y. J.; Huang, M. L.; Hong, M.; Kwo, J.; Wang, Y. H.

    2007-03-01

    III-nitride compound semiconductors are attractive for high-temperature and high-power MOSFET applications due to their intrinsic properties of wide band gap, high breakdown field, and high saturation velocity under high fields. In this work GaN-based high k MOS diodes were fabricated using MBE-grown Ga2O3(Gd2O3), MBE-grown HfO2 and ALD-grown HfO2 as the gate dielectrics with dielectric constants of 14.7, 17.4 and 16.5, respectively. All MOS diodes exhibited low leakage (<10-6 A/cm^2 at Vfb+1) and well behaved capacitance-voltage curves with a low interfacial density of states of ˜10^11 cm-2eV-1. Energy-band diagrams of the MOS structures have been determined by extracting valance-band offset (δEV) from HR-XPS and with the bandgaps of the oxides. For example, the ALD-grown HfO2-GaN at the interfaces gave approximately δEC and δEV of 1.2 eV and 1.1 eV, respectively.

  10. Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

    NASA Astrophysics Data System (ADS)

    Ohsawa, Kazuto; Netsu, Seiko; Kise, Nobukazu; Noguchi, Shinji; Miyamoto, Yasuyuki

    2017-04-01

    In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance–gate voltage (C–V G) and drain current–gate voltage (I D–V G) characteristics. We determined that the mobility decreased when the gate voltage sweeping width increased during C–V G and I D–V G measurements. In addition, we determined that the lowering of the deposition temperature to 120 °C improved the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks as compared with that corresponding to deposition at 300 °C. Furthermore, HfO2/Al2O3/InGaAs gate stacks with various Al2O3 thicknesses were fabricated. When the number of Al2O3 deposition cycles was more than 4, the mobility of MOSFETs with HfO2/Al2O3/InGaAs gate stacks improved, reaching the value of the Al2O3/InGaAs gate stack.

  11. Polarization-independent broadband dielectric bilayer gratings for spectral beam combining system

    NASA Astrophysics Data System (ADS)

    Li, Linxin; Liu, Quan; Chen, Junming; Wang, Leilei; Jin, Yunxia; Yang, Yifeng; Shao, Jianda

    2017-02-01

    We report on a polarization-independent all-dielectric trapezoidal bilayer grating with broadband and high diffraction efficiency. The bilayer trapezoidal grating ridge on a reflector consists of an HfO2 layer and a SiO2 layer. The theoretical -1st order efficiencies of the grating are more than 95% with wavelength range from 1010 nm to 1080 nm for both TE and TM polarizations. The fabrication tolerances depending on the HfO2 and SiO2 layer grating ridge depths are enough to obtain the designed grating using current craft. The fabricated grating with exceeding 94% efficiency from 1000 nm to 1085 nm measured by a non-polarization laser has been fabricated and applied in a spectral beam combining external cavity to combine eight beams into one beam output with 10.77 kW.

  12. Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

    NASA Astrophysics Data System (ADS)

    Broqvist, Peter; Pasquarello, Alfredo

    2007-02-01

    Electronic band gaps and dielectric constants are obtained for amorphous hafnium silicates using first-principles methods. Models of amorphous (HfO2)x(SiO2)1-x for varying x are generated by ab initio molecular dynamics. The calculations show that the presence of Hf gives rise to low-lying conduction states which explain the experimentally observed nonlinear dependence of the band gap on hafnium content. Static dielectric constants are found to depend linearly on x, supporting recent experimental data.

  13. Ultrathin Dielectric Oxide Films On Silicon

    DOEpatents

    Klemperer, Walter G.; Lee, Jason; Mikalsen, Erik A.; Payne, David A.

    2004-09-21

    A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

  14. Low-Frequency Noise of Strained and Non-Strained n-Channel Tri-Gate FinFETs With Different Gate Dielectrics

    NASA Astrophysics Data System (ADS)

    Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, E.; Claeys, C.

    2009-04-01

    The influence of different front gate Hf-based high-k dielectrics (HfSiON/SiO2 and HfO2/SiO2) on the shape of the low-frequency noise spectra for n-channel tri-gate FinFETs processed in standard silicon-on-insulator (SOI) substrates, and global Strained Si Directly On Insulator (sSOI) wafers with/without Selective Epitaxial Grown (SEG) source and drain regions is studied. For different process splits the concentration distributions of slow traps over the thickness of the gate dielectric are estimated and it is shown that these distributions depend on the dielectric type.

  15. Reliability study of Zr and Al incorporated Hf based high-k dielectric deposited by advanced processing

    NASA Astrophysics Data System (ADS)

    Bhuyian, Md Nasir Uddin

    Hafnium-based high-kappa dielectric materials have been successfully used in the industry as a key replacement for SiO2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher kappa values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In addition, next generation devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-kappa film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al incorporated HfO 2 based high-kappa dielectrics is conducted to investigate improvement in electrical characteristics and reliability. To meet scaling requirements of the gate dielectric to sub 0.7 nm, Zr is added to HfO2 to form Hf1-xZrxO2 with x=0, 0.31 and 0.8 where the dielectric film is deposited by using various intermediate processing conditions, like (i) DADA: intermediate thermal annealing in a cyclical deposition process; (ii) DSDS: similar cyclical process with exposure to SPA Ar plasma; and (iii) As-Dep: the dielectric deposited without any intermediate step. MOSCAPs are formed with TiN metal gate and the reliability of these devices is investigated by subjecting them to a constant voltage stress in the gate injection mode. Stress induced flat-band voltage shift (DeltaVFB), stress induced leakage current (SILC) and stress induced interface state degradation are observed. DSDS samples demonstrate the superior characteristics whereas the worst degradation is observed for DADA samples. Time dependent dielectric breakdown (TDDB) shows that DSDS Hf1-xZrxO2 (x=0.8) has the superior characteristics with reduced oxygen vacancy, which is affiliated to

  16. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport.

    PubMed

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; Nakamura, Hisao; Asai, Yoshihiro; Heinonen, Olle

    2016-03-14

    Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer" between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottky barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high- and low-resistance states. Finally, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.

  17. How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO2/SiO2 antireflection and high reflection coatings.

    DOE PAGES

    Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

    2016-06-01

    Optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out ofmore » commission. In light of this circumstance, we explored how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. Finally, the coatings of this study consist of HfO2 and SiO2 layer materials and include antireflection coatings for 527 nm at normal incidence, and high reflection coatings for 527 nm, 45⁰ angle of incidence (AOI), in P-polarization (P-pol).« less

  18. Statistical study of single and multiple pulse laser-induced damages of HfO2/SiO2 AR coatings at 1064 nm

    NASA Astrophysics Data System (ADS)

    Liu, Wenwen; Wei, Chaoyang; Chen, Shunli; Fang, Zhou; Yi, Kui; Shao, Jianda

    2013-08-01

    Multiple laser irradiations induce a critical issue as regards the lifetime of optical components. HfO2/SiO2 AR coatings for 1064 nm were prepared by conventional electron beam deposition. The evolution of laser-induced damage threshold (LIDT) and 100% damage probability threshold with shot numbers were investigated to illustrate the incubation mechanism of defect-induced damages and the intrinsic material modifications of coatings. It was found that the multi-shot LIDTs were lower than that of single-shot because of "fatigue effect". The 100% damage probability threshold also decreased with increasing shot numbers. This incubation phenomenon implied laser-induced modifications to the coating material that weaken it to subsequent pulse exposures. LID probability curves simulated with a statistical model assuming Gaussian distribution of defect threshold were used to highlight information on defects. Simulation results showed that the thresholds of different kinds of defects decreased with the increase of shot numbers. Optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM) and step profiler were employed in mapping damage morphology features and damage depth to discuss the initiators and mechanism of damage initiation. Additionally, damage regions were accessed by X-ray photoelectron spectroscopy (XPS) to indicate the changes in elemental content and valence of the materials with increasing pulse numbers.

  19. An ultrathin directional carpet cloak based on generalized Snell's law

    NASA Astrophysics Data System (ADS)

    Zhang, Jing; Lei Mei, Zhong; Ru Zhang, Wan; Yang, Fan; Jun Cui, Tie

    2013-10-01

    Based on generalized Snell's law, we propose an ultrathin directional carpet cloak operating in the reflection geometry. The cloak is constructed by two identical ultrathin metal-backed dielectric slabs with metallic "H" patterns on the other sides to form a triangular region. When put on an infinite ground plane and illuminated by electromagnetic waves from overhead, it can manipulate the reflected wavefronts to mimic the infinite ground plane. We fabricate a microwave sample and perform near-field scanning experiments to verify the cloaking effect. The measurement results are in good agreement with full-wave simulations and theoretical analysis.

  20. Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

    NASA Astrophysics Data System (ADS)

    O'Regan, T. P.; Fischetti, M. V.; Sorée, B.; Jin, S.; Magnus, W.; Meuris, M.

    2010-11-01

    We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-κ dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In0.53Ga0.47As and GaAs substrates with SiO2 and HfO2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In0.53Ga0.47As with HfO2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs.

  1. Influence of oxygen vacancies on the dielectric properties of hafnia: First-principles calculations

    NASA Astrophysics Data System (ADS)

    Cockayne, Eric

    2007-03-01

    First-principles calculations were used to study the effects of neutral and 2+ charged oxygen vacancies on the dielectric properties of crystalline HfO2 . In agreement with previous results, the neutral vacancy is more stable on four fold-coordinated site, while the charged vacancy is more stable on a three fold-coordinated site. For both vacancy positions, HfO2 remains insulating whether the vacancy is neutral or in the 2+ charge state. The dynamical matrix, Born effective charges, and electronic dielectric tensor were calculated for each structure. With one oxygen vacancy per 64 oxygen atoms, the static dielectric constant κs is increased by 1%-2% for neutral vacancies and suppressed by 1%-3% for 2+ charged vacancies, with the larger changes for three fold-coordinated vacancies. The exact result in the case of a charged vacancy depends on how the neutralizing charge necessary for macroscopic charge neutrality is modeled. The increase in κs for neutral oxygen vacancies arises from an enhancement of the electronic dielectric response due to a pair of electrons occupying an easily polarizable F -center defect state. The suppression in κs for charged oxygen vacancies is due to phonon hardening, which reduces the ionic response. No evidence is found for characteristic localized phonons induced by oxygen vacancies that could be detected by infrared or Raman spectroscopy.

  2. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  3. Thermal Conductivity and Stability of HfO2-Y2O3 and La2Zr2O7 Evaluated for 1650 Deg C Thermal/Environmental Barrier Coating Applications

    NASA Technical Reports Server (NTRS)

    Zhu, Dong-Ming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal and environmental barrier coating (T/EBC) materials for gas turbine ceramic matrix composite (CMC) combustor applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature stability of hot-pressed and plasma sprayed specimens with representative partially-stabilized and fully-cubic HfO2-Y2O3 compositions and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasmasprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC hexoloy or SiC/SiC CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications are also discussed.

  4. Ultrathin microwave absorber based on metamaterial

    NASA Astrophysics Data System (ADS)

    Kim, Y. J.; Yoo, Y. J.; Hwang, J. S.; Lee, Y. P.

    2016-11-01

    We suggest that ultrathin broadband metamaterial is a perfect absorber in the microwave regime by utilizing the properties of a resistive sheet and metamaterial. Meta-atoms are composed of four-leaf clover-shape metallic patterns and a metal plane separated by three intermediate resistive sheet layers between four dielectric layers. We interpret the absorption mechanism of the broadband by using the distribution of surface currents at specific frequencies. The simulated absorption was over 99% in 1.8-4.2 GHz. The corresponding experimental absorption was also over 99% in 2.62-4.2 GHz; however, the absorption was slightly lower than 99% in 1.8-2.62 GHz because of the sheet resistance and the changed values for the dielectric constant. Furthermore, it is independent of incident angle. The results of this research indicate the possibility of applications, due to the suppression of noxious exposure, in cell phones, computers and microwave equipments.

  5. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    NASA Astrophysics Data System (ADS)

    Yu, Ai-Fang; Qi, Qiong; Jiang, Peng; Jiang, Chao

    2009-07-01

    Carrier mobility enhancement from 0.09 to 0.59 cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  6. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    NASA Astrophysics Data System (ADS)

    Kent, Tyler; Tang, Kechao; Chobpattana, Varistha; Negara, Muhammad Adi; Edmonds, Mary; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi; McIntyre, Paul; Kummel, Andrew C.

    2015-10-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher Cmax hypothesized to be a result of poor nucleation of HfO2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low Dit high Cox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared.

  7. Pulsed external magnetic fields increase the deposition rate in reactive HiPIMS while preserving stoichiometry: An application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Denniss, P.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-09-01

    We compare the use of externally applied pulsed and steady magnetic fields for the enhancement of deposition rate in reactive High Power Impulse Magnetron Sputtering (HiPIMS), using the deposition of amorphous hafnium oxide (a-HfO2) on Si as an example. The external magnetic fields were applied by a solenoidal coil, placed above the magnetron target. In the case of a steady magnetic field, a higher voltage was required to initiate the HiPIMS discharge, a longer delay time was observed for current onset, and the films became substoichiometric. For the pulsed magnetic field, film stoichiometry was maintained under all applied external magnetic field strengths. Varying the duration and delay times of the magnetic field after the application of HiPIMS voltage pulse revealed that the afterglow of the plasma between HiPIMS pulses was actively quenched by the presence of the magnetic field. Therefore, the optimum operation with the highest plasma density was obtained by applying the external magnetic field only when the plasma was established and removing it at the end of the HiPIMS pulse. A model to explain the findings is presented in which the target poisoning by oxide formation is determined by the conditions in the afterglow. We describe an approach to achieve maximum deposition rate while maintaining film stoichiometry and high film quality. Amorphous HfO2 films with leakage current through the film of less than 5 × 10-5 A/cm2 at 0.1 MV/cm were obtained at the maximum deposition rate. The refractive index, at a wavelength of 500 nm, of the film prepared with pulsed magnetic field was 2.05 with a very low extinction coefficient of 8 × 10-5.

  8. Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

    NASA Astrophysics Data System (ADS)

    Horiuchi, Takeshi; Takahashi, Mitsue; Ohhashi, Kentaro; Sakai, Shigeki

    2009-10-01

    The optimum temperature of rapid thermal nitridation (RTN) of Si substrates was investigated for minimizing an equivalent oxide thickness (EOT) of an interfacial layer (IL) which was grown between HfO2 and Si of Pt/SrBi2Ta2O9(SBT)/HfO2/Si ferroelectric-gate field-effect transistors (FeFETs) during a post-annealing process. The RTN was performed in NH3 gas at various temperatures ranging from 800 °C to 1190 °C. As the RTN temperature was raised from 800 °C to 1080 °C, memory windows of drain current-gate voltage curves became wider. Large memory windows were obtained at the range from 1020 °C to 1130 °C. The maximum was 1.36 V obtained at 1080 °C. It was 10% larger than the typical values of Pt/SBT/HfO2/Si FeFETs without the RTN. At higher RTN temperatures than 1080 °C, the memory windows tended to decrease. At 800 °C and 1190 °C, all layer boundaries among SBT-HfO2-IL-Si seemed unclear in scanning transmission electron microscopic views probably due to material diffusions. The optimum RTN temperature for minimizing the EOT of the IL and maximizing the memory window of the Pt/SBT/HfO2/SiNx/Si FeFET was 1080 °C. The FeFET using the Si processed by the RTN at 1080 °C also showed good retentions without significant degradations over two days.

  9. The effect of a Ta oxygen scavenger layer on HfO2-based resistive switching behavior: Thermodynamic stability, electronic structure, and low-bias transport

    DOE PAGES

    Zhong, Xiaoliang; Rungger, Ivan; Zapol, Peter; ...

    2016-02-15

    Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access memories. While recent experimental work has shown that inserting a metallic "oxygen scavenger layer'' between the positive electrode and oxide improves device performance, the fundamental understanding of how the scavenger layer modifies the heterostructure properties is lacking. We use density functional theory to calculate thermodynamic properties and conductance of TiN/HfO2/TiN heterostructures with and without a Ta scavenger layer. First, we show that Ta insertion lowers the formation energy of low-resistance states. Second, while the Ta scavenger layer reduces the Schottkymore » barrier height in the high-resistance state by modifying the interface charge at the oxide-electrode interface, the heterostructure maintains a high resistance ratio between high-and low-resistance states. Lastly, we show that the low-bias conductance of device on-states becomes much less sensitive to the spatial distribution of oxygen removed from the HfO2 in the presence of the Ta layer. By providing a fundamental understanding of the observed improvements with scavenger layers, we open a path to engineer interfaces with oxygen scavenger layers to control and enhance device performance. In turn, this may enable the realization of a non-volatile low-power memory technology with concomitant reduction in energy consumption by consumer electronics and offering significant benefits to society.« less

  10. Quantification of trap densities at dielectric/III-V semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Engel-Herbert, Roman; Hwang, Yoontae; Stemmer, Susanne

    2010-08-01

    High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the Γ valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (Dit) and band bending of HfO2/In0.53Ga0.47As interfaces with different Dit and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting Dit are discussed and criteria that establish unpinned interfaces are developed.

  11. Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: a Raman study.

    PubMed

    Liyanage, Luckshitha Suriyasena; Cott, Daire J; Delabie, Annelies; Van Elshocht, Sven; Bao, Zhenan; Wong, H-S Philip

    2013-06-21

    Single-wall carbon nanotubes (SWCNTs) have great potential to become the channel material for future high-speed transistor technology. However, to realize a carbon nanotube field effect transistor (CNTFET) with excellent gate control, the high-k dielectrics between the CNT and the metal gate must have superb electrical properties and extremely high uniformity. Thus it is essential to understand the interactions between high-k materials and the SWCNTs to effectively control the transistor characteristics. In this study, we investigate the effects of atomic layer deposited (ALD) high-k dielectrics (Al2O3 and HfO2) on SWCNTs using Raman spectroscopy. We subjected the SWCNTs to various ALD cycles and studied the nucleation and growth of ALD dielectrics at defect sites using scanning electron microscopy and transmission electron microscopy images. We analyzed these samples using Raman spectroscopy and x-ray photoelectron spectroscopy. The Raman peak shifts of the G-peak and the 2D (G') peaks suggest doping and stress induced effects on the CNTs by the surrounding high-k oxide environment. Trends in the G-peak FWHM and G/D-peak ratios were identified and compared between Al2O3 and HfO2. We confirmed the ALD-deposited HfO2 is polycrystalline using x-ray diffraction and analyzed dielectric-CNT bonding states using XPS measurements. This study provides insights on the effects of ALD high-k materials on SWCNTs for future high-speed transistor applications.

  12. Atomic layer deposition of high-k dielectrics on single-walled carbon nanotubes: a Raman study

    NASA Astrophysics Data System (ADS)

    Suriyasena Liyanage, Luckshitha; Cott, Daire J.; Delabie, Annelies; Van Elshocht, Sven; Bao, Zhenan; Wong, H.-S. Philip

    2013-06-01

    Single-wall carbon nanotubes (SWCNTs) have great potential to become the channel material for future high-speed transistor technology. However, to realize a carbon nanotube field effect transistor (CNTFET) with excellent gate control, the high-k dielectrics between the CNT and the metal gate must have superb electrical properties and extremely high uniformity. Thus it is essential to understand the interactions between high-k materials and the SWCNTs to effectively control the transistor characteristics. In this study, we investigate the effects of atomic layer deposited (ALD) high-k dielectrics (Al2O3 and HfO2) on SWCNTs using Raman spectroscopy. We subjected the SWCNTs to various ALD cycles and studied the nucleation and growth of ALD dielectrics at defect sites using scanning electron microscopy and transmission electron microscopy images. We analyzed these samples using Raman spectroscopy and x-ray photoelectron spectroscopy. The Raman peak shifts of the G-peak and the 2D (G‧) peaks suggest doping and stress induced effects on the CNTs by the surrounding high-k oxide environment. Trends in the G-peak FWHM and G/D-peak ratios were identified and compared between Al2O3 and HfO2. We confirmed the ALD-deposited HfO2 is polycrystalline using x-ray diffraction and analyzed dielectric-CNT bonding states using XPS measurements. This study provides insights on the effects of ALD high-k materials on SWCNTs for future high-speed transistor applications.

  13. Ultra-thin multilayer capacitors.

    SciTech Connect

    Renk, Timothy Jerome; Monson, Todd C.

    2009-06-01

    The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report details some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.

  14. Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

    NASA Astrophysics Data System (ADS)

    Sun, X.; Saadat, O. I.; Chang-Liao, K. S.; Palacios, T.; Cui, S.; Ma, T. P.

    2013-03-01

    We introduce an ac-transconductance method to profile the gate oxide traps in a HfO2 gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures.

  15. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

    NASA Astrophysics Data System (ADS)

    Park, Tae Joo; Byun, Youngchol; Wallace, Robert M.; Kim, Jiyoung

    2016-05-01

    The HfO2 films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al2O3 incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al2O3 phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  16. Ultrathin zoom telescopic objective.

    PubMed

    Li, Lei; Wang, Di; Liu, Chao; Wang, Qiong-Hua

    2016-08-08

    We report an ultrathin zoom telescopic objective that can achieve continuous zoom change and has reduced compact volume. The objective consists of an annular folded lens and three electrowetting liquid lenses. The annular folded lens undertakes the main part of the focal power of the lens system. Due to a multiple-fold design, the optical path is folded in a lens with the thickness of ~1.98mm. The electrowetting liquid lenses constitute a zoom part. Based on the proposed objective, an ultrathin zoom telescopic camera is demonstrated. We analyze the properties of the proposed objective. The aperture of the proposed objective is ~15mm. The total length of the system is ~18mm with a tunable focal length ~48mm to ~65mm. Compared with the conventional zoom telescopic objective, the total length has been largely reduced.

  17. Data Retention and Readout Degradation Properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Saiki, Hirokazu; Tokumitsu, Eisuke

    2007-01-01

    We discuss the data retention and readout degradation properties of ferroelectric-gate field-effect transistors (FeFETs) with Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structures. We first point out that to read out the stored data correctly, unselected FeFETs should be turned off during the readout process and that this process causes a significant reduction of ON readout current. We next characterize the data retention properties of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si structure n-channel FeFET by taking the readout process into account. It is shown that the retention property measured by applying positive readout pulses after holding at VG=0 V for 30 s, is similar to that measured by the conventional method in which drain current is continuously measured at a positive hold voltage.

  18. MOS Ge Diodes Based on High κ Gate Dielectrics Grown by MBE and ALD

    NASA Astrophysics Data System (ADS)

    Lee, Kun Yu; Lee, W. C.; Lin, T. D.; Lee, C. S.; Chang, Y. C.; Lee, Y. J.; Huang, M. L.; Wu, Y. D.; Hong, M.; Kwo, J.

    2007-03-01

    Germanium-based CMOS technology is gaining importance due to its high carrier mobility. In this work high κ gate-dielectrics, Al2O3, HfO2, Y2O3 and Ga2O3(Gd2O3) grown by MBE and ALD were investigated as passivation layers on n type Ge(100). Thermal stability of the MOS diodes was examined after various anneals. Prior to dielectric depositions surface pretreatments were applied to reduce the unwanted GeOx interfacial layer, and to improve electrical properties. Frequency dispersion of C-V curves was reduced by using a 350^oC preclean process, compared to the sample without precleaning. The leakage current density of ALD grown HfO2 (6.8nm) is 4.6×10-6 A/cm^2 with κ of 10.5. The improved CV curve was attributed to less GeOx formed at substrate and oxide interface, as confirmed by XPS analysis. However, with higher cleaning temperature over 400^oC, the CV curves showed additional inversion capacitance, possibly due to minority carriers from defect states near the interface.

  19. Nanoscale electrochemistry using dielectric thin films as solid electrolytes

    NASA Astrophysics Data System (ADS)

    Valov, Ilia; Lu, Wei D.

    2016-07-01

    It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications.

  20. Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN

    NASA Astrophysics Data System (ADS)

    Yang, Jialing

    In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25--220 °C). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O 3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H 2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and

  1. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.

    PubMed

    Chang, Hsiao-Yu; Yang, Shixuan; Lee, Jongho; Tao, Li; Hwang, Wan-Sik; Jena, Debdeep; Lu, Nanshu; Akinwande, Deji

    2013-06-25

    While there has been increasing studies of MoS2 and other two-dimensional (2D) semiconducting dichalcogenides on hard conventional substrates, experimental or analytical studies on flexible substrates has been very limited so far, even though these 2D crystals are understood to have greater prospects for flexible smart systems. In this article, we report detailed studies of MoS2 transistors on industrial plastic sheets. Transistor characteristics afford more than 100x improvement in the ON/OFF current ratio and 4x enhancement in mobility compared to previous flexible MoS2 devices. Mechanical studies reveal robust electronic properties down to a bending radius of 1 mm which is comparable to previous reports for flexible graphene transistors. Experimental investigation identifies that crack formation in the dielectric is the responsible failure mechanism demonstrating that the mechanical properties of the dielectric layer is critical for realizing flexible electronics that can accommodate high strain. Our uniaxial tensile tests have revealed that atomic-layer-deposited HfO2 and Al2O3 films have very similar crack onset strain. However, crack propagation is slower in HfO2 dielectric compared to Al2O3 dielectric, suggesting a subcritical fracture mechanism in the thin oxide films. Rigorous mechanics modeling provides guidance for achieving flexible MoS2 transistors that are reliable at sub-mm bending radius.

  2. Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses

    NASA Astrophysics Data System (ADS)

    Kwak, Ho-Young; Kwon, Hyuk-Min; Jung, Yi-Jung; Kwon, Sung-Kyu; Jang, Jae-Hyung; Choi, Woon-Il; Ha, Man-Lyun; Lee, Ju-Il; Lee, Song-Jae; Lee, Hi-Deok

    2013-01-01

    In this paper, electrical properties and reliability of high capacitance density Metal-Insulator-Metal (MIM) capacitor with sandwiched hafnium-based dielectric is analyzed using three kinds of voltage stress; constant voltage stress (CVS), unipolar voltage and bipolar voltage stresses. The fabricated MIM capacitor shows not only high capacitance density but also low leakage current density of about ˜10 nA/cm2 at room temperature and 1 V. The relative variation of capacitance (ΔC/C0) increases and the variation of voltage linearity (α/α0) gradually decreases with stress-time due to the charge trapping effect in the high-k dielectric. The relative variations of capacitance and voltage linearity show the greater change by the bipolar voltage stress than CVS and unipolar voltage stresses.

  3. Ultrathin metallized PBI paper

    NASA Technical Reports Server (NTRS)

    Chenevey, E. C.

    1978-01-01

    A study to determine the feasibility of preparing ultrathin papers with a target weight of 3.5 g/m squared from polybenzimidazole (PBI) fibrids was undertaken. Small hand sheets of target weight were fabricated. They were light brown, low density materials with sufficient strength to be readily handleable. Characterization of these sheets included strength, fold endurance, thermal gravimetric analysis in air and nitrogen and photomicrographs. Two different batches of PBI fibrids were studied and differences in fabrication performance were noted. In neither case could target weight papers be prepared using conventional paper making techniques.

  4. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

  5. Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Koteswara Rao, K. S. R.

    2017-02-01

    The solution route deposition method will reduce the fabrication cost, and it is compatible with existing Si technology. Here, we systematically investigate the impact of annealing temperature on the electrical and dielectric properties along with the band alignment of HfO2 thin films with silicon. The films were fabricated using the hafnium isopropoxide adduct precursor, which is environment friendly and non-toxic in ambient conditions. We have analyzed the band alignment of HfO2/Si stack by using ultra-violet photoelectron spectroscopic and current-voltage (J-V) plot to understand its impact on electrical transport. The bandgap of HfO2 films estimated from Plasmon energy loss spectra is 5.9 eV. The composition analysis is done with X-ray photoelectron spectroscopy that suggests a good stoichiometric ratio of 1:1.96. The atomic force microscopy studies display a smooth surface with the roughness of 1.4 Å without any cracks in the films. It is found that the current conduction mechanisms and barrier heights at both the interfaces are influenced by the annealing temperature; a temperature of 450 °C results in an optimum performance. Interestingly, the high value of dielectric constant (23) in the amorphous phase is attributed to the existence of cubic like short range order in HfO2 films. Moreover, a low leakage current density of 1.4 × 10-9 A/cm2 at -1 V and 1.48 × 10-8 A/cm2 at +1 V in gate and substrate injection modes is achieved. The obtained defect activation energies of 0.91 eV, 0.87 eV, and 0.93 eV for the films annealed at 350 °C, 450 °C, and 550 °C lay below the conduction band edge of HfO2. These energy levels are ascribed to three and four fold oxygen vacancy related traps. The formation of dipoles at the interface, change in the microstructure, and oxygen migration at the interfacial layer are the possible causes for the observed parametric variations in the metal-insulator-semiconductor structure. The electrical properties can be tuned by

  6. Structural, electronic, vibrational and dielectric properties of selected high-shape K semiconductor oxides

    NASA Astrophysics Data System (ADS)

    Scolfaro, L. M. R.; Leite Alves, H. W.; Borges, P. D.; Garcia, J. C.; da Silva, E. F., Jr.

    2014-10-01

    The semiconductor oxides SnO2, HfO2, ZrO2, TiO2 and SrTiO3 are interesting materials for applications as high-K dielectric gate materials in silicon-based devices and spintronics, among others. Here we review our theoretical work about the structural, electronic and vibrational properties of these oxides in their most stable structural phases, including dielectric properties as derived from the electronic structure taking into account the lattice contribution. Finally, we address the recent role played by the presence of transition metal atoms in semiconductor oxides, considering in particular SnO2 as an example in forming diluted magnetic alloys.

  7. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    PubMed

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

  8. Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M.

    2013-01-01

    This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (Ig)-gate voltage (Vg) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k ɛhigh-k = Q + Esio2ɛsio2.

  9. All-dielectric metamaterials

    NASA Astrophysics Data System (ADS)

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

  10. All-dielectric metamaterials.

    PubMed

    Jahani, Saman; Jacob, Zubin

    2016-01-01

    The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

  11. Theoretical views on activation of methane catalyzed by Hf2+ and oxidation of CO (x(1)Σ(+)) by N2O (x(1)Σ(+)) Catalyzed by HfO2+ and TaO2+.

    PubMed

    Nian, Jingyan; Tie, Lu; Wang, Ben; Guo, Zhiguang

    2013-09-12

    The mechanisms of activation of CH4 catalyzed by (1/3)Hf(2+) and oxidation of CO by N2O catalyzed by (1/3)HfO(2+) or (2/4)TaO(2+) have been investigated using the B3LYP level of theory. For the activation of methane, the TSR (two-state reactivity) mechanism has been certified through the spin-orbit coupling (SOC) calculation and the Landau-Zener-type model. In the vicinity of the minimum energy crossing point (MECP), SOC equals 900.23 cm(-1) and the probability of intersystem crossing is approximately 0.62. Spin inversion makes the activation barrier decline from 1.63 to 0.57 eV. NBO analysis demonstrates that empty 6s and 5d orbitals of the Hf atom play the major role for the activation of C-H bonds. Finally, CH4 dehydrogenates to produce Hf-CH2(2+). For oxidation of CO by N2O catalyzed by HfO(2+) or TaO(2+), the covalent bonds between transition metal atoms and the oxygen atom restrict the freedom of valence electrons. Therefore, they are all SSR (single-state reactivity). The oxygen atom is directly extracted during the course of oxygen transfer, and its microscopic essence has been discussed. The detailed kinetic information of two catalytic cycles has been calculated by referencing the "energetic span (δE)" model. Finally, TOF(HfO(2+))/TOF(TaO(2+)) = 2.7 at 298.15 K, which has a good consistency with the experimental result.

  12. HfO_2and ZrO2 : Comparison of Structures and Thermodynamic and Electronic Properties Based on Ab Initio Calculations and Experiment

    NASA Astrophysics Data System (ADS)

    Demkov, Alexander A.; Navrotsky, Alexandra

    2001-03-01

    The International Technology Roadmap for Semiconductors (ITRS) predicts that the strategy of scaling complementary metal-oxide-semiconductor (CMOS) devices will come to an abrupt end around the year 2012. The main reason for this will be the unacceptably high leakage current through the silicon dioxide gate with a thickness below 20 ÅFinding a gate insulator alternative to SiO2 has proven to be far from trivial. Hafnium and zirconium dioxides and silicates have been recently considered as gate dielectrics with intermediate dielectric constants. Hafnia and ziconia are important ceramic materials as well, and their phase relations are rather well studied. There is also interest in hafnia as a constituent of ceramic waste forms for plutonium, based on its refractory nature and high neutron absorption cross section. We use a combination of the ab-initio calculations and calorimetry to investigate thermodynamic and electronic properties of hafnia and zirconia. We describe the cubic to tetragonal phase transition in the fluorite structure by computing the total energy surface for zone-edge distortions correct to fourth order in the soft-mode displacement with the strain coupling renormalization included. We compare the two materials using some simple chemical concepts.

  13. Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Meyler, B.; Shneider, Y.; Yofis, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, T.; Ankonina, G.; Kaplan, W. D.; Lisiansky, M.; Roizin, Y.; Eisenstein, G.

    2013-02-01

    An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.

  14. Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer

    NASA Astrophysics Data System (ADS)

    Illarionov, Yu. Yu.; Vexler, M. I.; Isakov, D.; Fedorov, V. V.; Sing, Yew Kwang

    2013-10-01

    A technique for diagnostics of the injection properties of thin dielectric layers based on analysis of the data on silicon electroluminescence in a metal-insulator-semiconductor structure is proposed. The possibility of applying this technique to control the electron injection energy (in particular, when the barrier parameters are poorly known) is demonstrated by the example of samples with CaF2 and HfO2/SiO2. The results obtained are important for application of the insulators under study in microelectronic devices.

  15. Transport properties of chemically synthesized MoS2 - Dielectric effects and defects scattering

    NASA Astrophysics Data System (ADS)

    Mongillo, Massimo; Chiappe, Daniele; Arutchelvan, Goutham; Asselberghs, Inge; Perucchini, Marta; Manfrini, Mauricio; Lin, Dennis; Huyghebaert, Cedric; Radu, Iuliana

    2016-12-01

    We report on the electrical characterization of synthetic, large-area MoS2 layers obtained by the sulfurization technique. The effects of dielectric encapsulation and localized defect states on the intrinsic transport properties are explored with the aid of temperature-dependent measurements. We study the effect of dielectric environment by transferring as-grown MoS2 films into different dielectrics such as SiO2, Al2O3, HfO2, and ZrO2 with increasing dielectric permittivity. Electrical data are collected on a statistically-relevant device ensemble and allow to assess device performances on a large scale assembly. Our devices show relative in-sensitiveness of mobility with respect to dielectric encapsulation. We conclude that the device behavior is strongly affected by several scattering mechanisms of different origin that can completely mask any effect related to dielectric mismatch. At low temperatures, conductivity of the devices is thermally activated, a clear footprint of the existence of a mobility edge separating extended states in the conduction band from impurity states in the band-gap.

  16. Trapping of hydrogen in hafnium-based high kappa dielectric thin films for advanced CMOS applications

    NASA Astrophysics Data System (ADS)

    Ukirde, Vaishali

    In recent years, advanced high kappa gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavior such as incorporation, diffusion, trapping and release with the aim of controlling and using it to optimize the performance of electronic device structures. In this dissertation, a systematic study of hydrogen trapping and the role of carbon impurities in various alternate gate dielectric candidates, HfO2/Si, HfxSi1-xO2/Si, HfON/Si and HfON(C)/Si is presented. It has been shown that processing of high kappa dielectrics may lead to some crystallization issues. Rutherford backscattering spectroscopy (RBS) for measuring oxygen deficiencies, elastic recoil detection analysis (ERDA) for quantifying hydrogen and nuclear reaction analysis (NRA) for quantifying carbon, X-ray diffraction (XRD) for measuring degree of crystallinity and X-ray photoelectron spectroscopy (XPS) were used to characterize these thin dielectric materials. ERDA data are used to characterize the evolution of hydrogen during annealing in hydrogen ambient in combination with preprocessing in oxygen and nitrogen.

  17. Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack

    NASA Astrophysics Data System (ADS)

    Lin, Chi-Chou; Kuo, Yue

    2015-03-01

    Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.

  18. Femtosecond laser-induced damage threshold of electron beam deposited dielectrics for 1-m class optics

    NASA Astrophysics Data System (ADS)

    Hervy, Adrien; Gallais, Laurent; Chériaux, Gilles; Mouricaud, Daniel

    2017-01-01

    In order to transport multi-petawatt (PW) femtosecond laser beams with large spectral bandwidth, specific mirrors have to be designed and manufactured. We report on an experimental study of the laser-damage resistance and other optical properties of coating materials deposited in a 1-m class coating chamber. The study is conducted on single-layer coatings deposited by electron beam evaporation at 500 fs. Based on the experience of large optics for nanosecond applications, hafnia and silica are particularly investigated. However, in the case of sub-15 fs, the spectral specifications for PW beam transport mirrors cannot be reached by classical high laser-resistant quarter-wave SiO2/HfO2 stacks. Therefore, we investigate the laser resistance of different dielectrics of interest deposited with electron-beam processes: Al2O3, Y2O3, Sc2O3, HfO2, Ta2O5, TiO2. The influence of multiple pulse irradiations and environmental conditions, such as vacuum and temperature, is studied. With the investigation of multilayer stacks, we also show that there is no difference in behavior when a film is studied as a single layer or embedded in a stack. Based on these results, we were able to optimize high reflective (>99.5%), broadband (300 nm) and high laser-induced damage threshold (2.5 J/cm2) mirrors for PW applications.

  19. Conformal surface plasmons propagating on ultrathin and flexible films.

    PubMed

    Shen, Xiaopeng; Cui, Tie Jun; Martin-Cano, Diego; Garcia-Vidal, Francisco J

    2013-01-02

    Surface plasmon polaritons (SPPs) are localized surface electromagnetic waves that propagate along the interface between a metal and a dielectric. Owing to their inherent subwavelength confinement, SPPs have a strong potential to become building blocks of a type of photonic circuitry built up on 2D metal surfaces; however, SPPs are difficult to control on curved surfaces conformably and flexibly to produce advanced functional devices. Here we propose the concept of conformal surface plasmons (CSPs), surface plasmon waves that can propagate on ultrathin and flexible films to long distances in a wide broadband range from microwave to mid-infrared frequencies. We present the experimental realization of these CSPs in the microwave regime on paper-like dielectric films with a thickness 600-fold smaller than the operating wavelength. The flexible paper-like films can be bent, folded, and even twisted to mold the flow of CSPs.

  20. InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

    NASA Astrophysics Data System (ADS)

    Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed A.; Ng, Tien K.; Ooi, Boon S.

    2015-10-01

    We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ˜1060-1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

  1. Ultrathin Planar Graphene Supercapacitors

    SciTech Connect

    Huang, Jingsong; Meunier, Vincent; Sumpter, Bobby G; Ajayan, Pullikel M; Yoo, Jung Joon; Balakrishnan, Kaushik; Srivastava, Anchal; Conway, Michelle; Reddy, Arava Leela Mohan; Yu, Jin; Vajtai, Robert

    2011-01-01

    With the advent of atomically thin and flat layers of conducting materials such as graphene, new designs for thin film energy storage devices with good performance have become possible. Here, we report an in-plane fabrication approach for ultrathin supercapacitors based on electrodes comprised of pristine graphene and multi-layer reduced graphene oxide. The in-plane design is straightforward to implement and exploits efficiently the surface of each graphene layer for energy storage. The open architecture and the effect of graphene edges enable even the thinnest of devices, made from as grown 1-2 graphene layers, to reach specific capacities up to 80 Fcm-2. While, much higher (394 Fcm-2) specific capacities are observed in case of multi-layered graphene oxide electrodes, owing to the better utilization of the available electrochemical surface area. The performances of devices with pristine as well as thicker graphene based structures are examined using a combination of experiments and model calculations. The demonstrated all solid-state supercapacitors provide a prototype for a broad range of thin-film based energy storage devices.

  2. Fabrication and characterization of high-K dielectric integrated silicon nanowire sensor for DNA sensing application (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Jayakumar, Ganesh; Legallais, Maxime; Hellström, Per-Erik; Mouis, Mireille; Stambouli, Valérie; Ternon, Céline; Östling, Mikael

    2016-09-01

    1D silicon nanowires (SiNW) are attractive for charge based DNA sensing applications due to their small size and large surface to volume ratio. An ideal portable biosensor is expected to have repeatable and reliable sensitivity, selectivity, low production cost and small feature size. Instead of using tools such as e-beam that are capital and time intensive, we propose a low cost CMOS self-aligned-double-patterning I-line lithography process to fabricate 60 nm wide SiNW. DNA probes are grafted on a thin dielectric layer that is deposited on top of the SiNW surface. Here we used HfO2 instead of the usual SiO2. Indeed, compared to SiO2, HfO2 has been reported to have higher amount of OH groups on its surface leading to enhanced signal quality. We also report preliminary biosensor characterizations. After HfO2 functionalization and single-stranded DNA probe grafting onto the SiNWs, the sensors were first put in contact with fluorophore labelled complementary DNA targets in order to test the efficiency of DNA hybridization optically. Then, a sequence of hybridization, de-hybridization and re-hybridization steps was followed by Id-Vg measurements in order to measure the electrical response of the sensors to target DNA as well as recycling capability. After each step, SiNW devices exhibited a threshold voltage shift larger than device-to-device dispersion, showing that both complementary DNA hybridization and de-hybridization can be electrically detected. These results are very encouraging as they open new frontiers for heterogeneous integration of liquid interacting array of nano sensors with CMOS circuits to fabricate a complete lab on chip.

  3. Fundamental limits of ultrathin metasurfaces

    PubMed Central

    Arbabi, Amir; Faraon, Andrei

    2017-01-01

    We present a set of universal relations which relate the local transmission, reflection, and polarization conversion coefficients of a general class of non-magnetic passive ultrathin metasurfaces. We show that these relations are a result of equal forward and backward scattering by single layer ultrathin metasurfaces, and they lead to confinement of the transmission, reflection, and polarization conversion coefficients to limited regions of the complex plane. Using these relations, we investigate the effect of the presence of a substrate, and show that the maximum polarization conversion efficiency for a transmissive metasurface decreases as the refractive index contrast between the substrate and cladding layer increases. Furthermore, we demonstrate that a single layer reflective metasurface can achieve full 2π phase shift coverage without altering the polarization if it is illuminated from the higher refractive index material. We also discuss two approaches for achieving asymmetric scattering from metasurfaces, and realizing metasurfaces which overcome the performance limitations of single layer ultrathin metasurfaces. PMID:28262739

  4. Fundamental limits of ultrathin metasurfaces

    NASA Astrophysics Data System (ADS)

    Arbabi, Amir; Faraon, Andrei

    2017-03-01

    We present a set of universal relations which relate the local transmission, reflection, and polarization conversion coefficients of a general class of non-magnetic passive ultrathin metasurfaces. We show that these relations are a result of equal forward and backward scattering by single layer ultrathin metasurfaces, and they lead to confinement of the transmission, reflection, and polarization conversion coefficients to limited regions of the complex plane. Using these relations, we investigate the effect of the presence of a substrate, and show that the maximum polarization conversion efficiency for a transmissive metasurface decreases as the refractive index contrast between the substrate and cladding layer increases. Furthermore, we demonstrate that a single layer reflective metasurface can achieve full 2π phase shift coverage without altering the polarization if it is illuminated from the higher refractive index material. We also discuss two approaches for achieving asymmetric scattering from metasurfaces, and realizing metasurfaces which overcome the performance limitations of single layer ultrathin metasurfaces.

  5. Fundamental limits of ultrathin metasurfaces.

    PubMed

    Arbabi, Amir; Faraon, Andrei

    2017-03-06

    We present a set of universal relations which relate the local transmission, reflection, and polarization conversion coefficients of a general class of non-magnetic passive ultrathin metasurfaces. We show that these relations are a result of equal forward and backward scattering by single layer ultrathin metasurfaces, and they lead to confinement of the transmission, reflection, and polarization conversion coefficients to limited regions of the complex plane. Using these relations, we investigate the effect of the presence of a substrate, and show that the maximum polarization conversion efficiency for a transmissive metasurface decreases as the refractive index contrast between the substrate and cladding layer increases. Furthermore, we demonstrate that a single layer reflective metasurface can achieve full 2π phase shift coverage without altering the polarization if it is illuminated from the higher refractive index material. We also discuss two approaches for achieving asymmetric scattering from metasurfaces, and realizing metasurfaces which overcome the performance limitations of single layer ultrathin metasurfaces.

  6. Nanodynamics of ferroelectric ultrathin films.

    PubMed

    Zhang, Qingteng; Herchig, R; Ponomareva, I

    2011-10-21

    The nanodynamics of ferroelectric ultrathin films made of PbTi(0.6)Zr(0.4)TiO(3) alloy is explored via the use of a first-principles-based technique. Our atomistic simulations predict that the nanostripe domains which constitute the ground state of ferroelectric ultrathin films under most electric boundary conditions oscillate under a driving ac field. Furthermore, we find that the atomically thin wall, or nanowall, that separates the nanodomains with different polarization directions behaves as an elastic object and has a mass associated with it. The nanowall mass is size-dependent and gives rise to a unique size-driven transition from resonance to relaxational dynamics in ultrathin films. A general theory of nanodynamics in such films is developed and used to explain all computational findings. In addition, we find an unusual dynamical coupling between nanodomains and mechanical deformations that could potentially be used in ultrasensitive electromechanical nanosensors.

  7. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

    PubMed

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-13

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  8. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    PubMed Central

    Pathi, Prathap; Peer, Akshit; Biswas, Rana

    2017-01-01

    Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

  9. Enzymatically active ultrathin pepsin membranes.

    PubMed

    Raaijmakers, Michiel J T; Schmidt, Thomas; Barth, Monika; Tutus, Murat; Benes, Nieck E; Wessling, Matthias

    2015-05-11

    Enzymatically active proteins enable efficient and specific cleavage reactions of peptide bonds. Covalent coupling of the enzymes permits immobilization, which in turn reduces autolysis-induced deactivation. Ultrathin pepsin membranes were prepared by facile interfacial polycondensation of pepsin and trimesoyl chloride. The pepsin membrane allows for simultaneous enzymatic conversion and selective removal of digestion products. The large water fluxes through the membrane expedite the transport of large molecules through the pepsin layers. The presented method enables the large-scale production of ultrathin, cross-linked, enzymatically active membranes.

  10. Charge transport and structural dynamics in ultra-thin films of polymerized ionic liquids

    NASA Astrophysics Data System (ADS)

    Heres, Maximilian; Cosby, Tyler; Berdzinski, Stefan; Strehmel, Veronica; Benson, Roberto; Sangoro, Joshua

    Ion conduction and structural dynamics in a series of ultra-thin films of imidazolium based polymerized ionic liquids are investigated using broadband dielectric spectroscopy, atomic force microscopy, and ellipsometry. No alteration in the characteristic charge transport rate is observed between bulk sample and films as thin as 12nm. These results are discussed within the recent approaches proposed to explain the confinement effects on structural dynamics in polymers and low molecular weight ionic liquids. NSF DRM Polymers Program.

  11. Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer.

    PubMed

    Chiang, Kuo-Chang; Hsieh, Tsung-Eong

    2012-06-08

    An extremely large memory window shift of about 30.7 V and high charge storage density =2.3 × 10(13) cm(-2) at ± 23 V gate voltage sweep were achieved in the nonvolatile floating gate memory (NFGM) device containing the AgInSbTe (AIST)-SiO(2) nanocomposite as the charge trap layer and HfO(2)/SiO(2) as the blocking oxide layer. Due to the deep trap sites formed by high-density AIST nanocrystals (NCs) in the nanocomposite matrix and the high-barrier-height feature of the composite blocking oxide layer, a good retention property of the device with a charge loss of about 16.1% at ± 15 V gate voltage stress for 10(4) s at the test temperature of 85 °C was observed. In addition to inhibiting the Hf diffusion into the programming layer, incorporation of the SiO(2) layer prepared by plasma-enhanced chemical vapor deposition in the sample provided a good Coulomb blockade effect and allowed significant charge storage in AIST NCs. Analytical results demonstrated the feasibility of an AIST-SiO(2) nanocomposite layer in memory device fabrication with a simplified processing method and post-annealing at a comparatively low temperature of 400 °C in comparison with previous NC-based NFGM studies.

  12. How reduced vacuum pumping capability in a coating chamber affects the laser damage resistance of HfO2/SiO2 antireflection and high-reflection coatings

    NASA Astrophysics Data System (ADS)

    Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

    2017-01-01

    Optical coatings with the highest laser damage thresholds rely on clean conditions in the vacuum chamber during the coating deposition process. A low-base pressure in the coating chamber, as well as the ability of the vacuum system to maintain the required pressure during deposition, are important aspects of limiting the amount of defects in an optical coating that could induce laser damage. Our large optics coating chamber at Sandia National Laboratories normally relies on three cryo pumps to maintain low pressures for e-beam coating processes. However, on occasion, one or more of the cryo pumps have been out of commission. In light of this circumstance, we explored how deposition under compromised vacuum conditions resulting from the use of only one or two cryo pumps affects the laser-induced damage thresholds of optical coatings. The coatings of this study consist of HfO2 and SiO2 layer materials and include antireflection coatings for 527 nm at normal incidence and high-reflection coatings for 527 nm at 45-deg angle of incidence in P-polarization.

  13. High temperature calorimetric studies of heat of solution of NiO, CuO, La2O3, TiO2, HfO2 in sodium silicate liquids

    NASA Astrophysics Data System (ADS)

    Linard, Yannick; Wilding, Martin C.; Navrotsky, Alexandra

    2008-01-01

    The enthalpies of solution of La2O3, TiO2, HfO2, NiO and CuO were measured in sodium silicate melts at high temperature. When the heat of fusion was available, we derived the corresponding liquid-liquid enthalpies of mixing. These data, combined with previously published work, provide insight into the speciation reactions in sodium silicate melts. The heat of solution of La2O3 in these silicate solvents is strongly exothermic and varies little with La2O3 concentration. The variation of heat of solution with composition of the liquid reflects the ability of La(III) to perturb the transient silicate framework and compete with other cations for oxygen. The enthalpy of solution of TiO2 is temperature-dependent and indicates that the formation of Na-O-Si species is favored over Na-O-Ti at low temperature. The speciation reactions can be interpreted in terms of recent spectroscopic studies of titanium-bearing melts which identify a dual role of Ti4+ as both a network-former end network-modifier. The heats of solution of oxides of transition elements (Ni and Cu) are endothermic, concentration-dependent and reach a maximum with concentration. These indicate a charge balanced substitution which diminishes the network modifying role of Na+ by addition of Ni2+ or Cu2+. The transition metal is believed to be in tetrahedral coordination, charge balanced by the sodium cation in the melts.

  14. Effectiveness of ion cleaning to improve the laser damage threshold of HfO2/SiO2 optical coatings for high reflection and antireflection at 527 nm and 1054 nm

    NASA Astrophysics Data System (ADS)

    Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

    2016-07-01

    Preventing contamination is vital to achieving high laser-induced damage thresholds in optical coatings. The importance of removing contamination from optical substrates has led to the development of many specialized cleaning processes, including the application of solvents, acids, mild detergents, and abrasives. To further enhance contamination removal, the substrate may be treated with ion cleaning just prior to depositing the optical coating. Ion cleaning is attractive thanks to the convenience of providing in-situ treatment to optical substrates, and also avoiding the hassle of managing hazardous chemicals or applying mechanical force to scrub off detergents and other cleaning agents. In this study, we compare the effectiveness of ion cleaning for increasing the laser-induced damage thresholds of high reflection (527 nm and 1054 nm) and antireflection (527 nm) coatings. Ion cleaning was performed using a radio frequency ion source with argon and oxygen. The coatings investigated were deposited with layers of HfO2 and SiO2 in an e-beam evaporation system, and are designed to withstand nanosecond pulses from a kJ-class laser.

  15. SiO2-P2O5-HfO2-Al2O3-Na2O glasses activated by Er3+ ions: From bulk sample to planar waveguide fabricated by rf-sputtering

    NASA Astrophysics Data System (ADS)

    Chiasera, A.; Vasilchenko, I.; Dorosz, D.; Cotti, M.; Varas, S.; Iacob, E.; Speranza, G.; Vaccari, A.; Valligatla, S.; Zur, L.; Lukowiak, A.; Righini, G. C.; Ferrari, M.

    2017-01-01

    0.4 Er3+-doped 90.7 SiO2 - 4.4 P2O5 - 2.3 HfO2 - 1.7 Al2O3 - 0.7 Na2O planar waveguide was fabricated by multi-target rf-sputtering technique starting by massive Er3+-activated P2O5-SiO2-Al2O3-Na2O glass. The optical parameters were measured by m-line apparatus operating at 632.8, 1319 and 1542 nm. The waveguide compositions were investigated by Energy Dispersive X-ray Spectroscopy and its morphology analyzed by Atomic Force Microscopy. The waveguide exhibits a single propagation mode at 1319 and 1542 nm with an attenuation coefficient of 0.2 dB/cm in the infrared. The emission of 4I13/2 → 4I15/2 transition of Er3+ ion, with a 28.5 nm bandwidth was observed upon TE0 mode excitation at 514.5 nm. The optical and spectroscopic features of the Er3+-activated parent P2O5-SiO2-Al2O3-Na2O glass were also investigated.

  16. Synthesis, characterization and biological study on Cr 3+, ZrO 2+, HfO 2+ and UO 22+ complexes of oxalohydrazide and bis(3-hydroxyimino)butan-2-ylidene)-oxalohydrazide

    NASA Astrophysics Data System (ADS)

    El-Asmy, A. A.; El-Gammal, O. A.; Radwan, H. A.

    2010-09-01

    Cr 3+, ZrO 2+, HfO 2+ and UO 22+ complexes of oxalohydrazide (H 2L 1) and oxalyl bis(diacetylmonoxime hydrazone) [its IUPAC name is oxalyl bis(3-hydroxyimino)butan-2-ylidene)oxalohydrazide] (H 4L 2) have been synthesized and characterized by partial elemental analysis, spectral (IR; electronic), thermal and magnetic measurements. [Cr(L 1)(H 2O) 3(Cl)]·H 2O, [ZrO(HL 1) 2]·C 2H 5OH, [UO 2(L 1)(H 2O) 2] [ZrO(H 3L 2)(Cl)] 2·2H 2O, [HfO(H 3L 2)(Cl)] 2·2H 2O and [UO 2(H 2L 2)]·2H 2O have been suggested. H 2L 1 behaves as a monobasic or dibasic bidentate ligand while H 4L 2 acts as a tetrabasic octadentate with the two metal centers. The molecular modeling of the two ligands have been drawn and their molecular parameters were calculated. Examination of the DNA degradation of H 2L 1 and H 4L 2 as well as their complexes revealed that direct contact of [ZrO(H 3L 2)(Cl)] 2·2H 2O or [HfO(H 3L 2)(Cl)] 2·2H 2O degrading the DNA of Eukaryotic subject. The ligands and their metal complexes were tested against Gram's positive Bacillus thuringiensis (BT) and Gram's negative ( Escherichia coli) bacteria. All compounds have small inhibitory effects.

  17. Partitioning behavior and stabilization of hydrophobically coated HfO2, ZrO2 and Hfx Zr 1-x O2 nanoparticles with natural organic matter reveal differences dependent on crystal structure.

    PubMed

    Navarro, Divina A; Depner, Sean W; Watson, David F; Aga, Diana S; Banerjee, Sarbajit

    2011-11-30

    The interactions of engineered nanomaterials with natural organic matter (NOM) exert a profound influence on the mobilities of the former in the environment. However, the influence of specific nanomaterial structural characteristics on the partitioning and colloidal stabilization of engineered nanomaterials in various ecological compartments remains underexplored. Herein, we present a systematic study of the interactions of humic acid (HA, as a model for NOM) with monodisperse, well-characterized, ligand-passivated HfO(2), ZrO(2), and solid-solution Hf(x)Zr(1-x)O(2) nanoparticles (NPs). We note that mixing with HA induces the almost complete phase transfer of hydrophobically coated monoclinic metal oxide (MO) NPs from hexane to water. Furthermore, HA is seen to impart appreciable colloidal stabilization to the NPs in the aqueous phase. In contrast, phase transfer and aqueous-phase colloidal stabilization has not been observed for tetragonal MO-NPs. A mechanistic model for the phase transfer and aqueous dispersal of MO-NPs is proposed on the basis of evidence from transmission electron microscopy, ζ-potential measurements, dynamic light scattering, Raman and infrared spectroscopies, elemental analysis, and systematic experiments on a closely related set of MO-NPs with varying composition and crystal structure. The data indicate the synergistic role of over-coating (micellar), ligand substitution (coordinative), and electrostatic processes wherein HA acts both as an amphiphilic molecule and a charged chelating ligand. The strong observed preference for the phase transfer of monoclinic instead of tetragonal NPs indicates the importance of the preferential binding of HA to specific crystallographic facets and suggests the possibility of being able to design NPs to minimize their mobilities in the aquatic environment.

  18. High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode

    NASA Astrophysics Data System (ADS)

    Shankar, Bhawani; Gupta, Sanjeev K.; Taube, William R.; Akhtar, J.

    2016-12-01

    This paper develops a deep insight into the behaviour of high-k dielectric-based field plate on Ni/4H-SiC Schottky diode. It tries to explain the mechanism by which high-k materials outperform silicon dioxide, when used under the field plate. Phenomena like modulation of field enhancement factor, reshaping of equipotential contours and expansion of depletion region while maintaining fixed depletion ratio (length/width = 2.3) helps to understand the electrical behaviour of high-k dielectric-based field plate. High-k materials relaxed the equipotential contours under the field plate edge which resulted in electric field reduction up to 88% and significant drop from 6.6 to 2.2 in field enhancement factor at device edges. The study considers the field plate of different dielectrics (SiO2, Si3N4, Al203, HfO2) and in each case, analytically explores the optimisation of field plate parameters (overlap length and dielectric thickness, dielectric constant). All the investigations have been done using numerical simulations on calibrated setup.

  19. Negative differential resistance in ultrathin Ge-on-insulator FETs

    NASA Astrophysics Data System (ADS)

    Kazazis, D.; Zaslavsky, A.; Tutuc, E.; Bojarczuk, N. A.; Guha, S.

    2007-01-01

    In this paper we report on the fabrication of all-epitaxial ultrathin germanium-on-crystalline lanthanum-yttrium-oxide field effect transistors. The oxide is lattice matched to Si (1 1 1) and has a dielectric constant of ~18. The transistors show ambipolar behaviour, both N- and P-channel operations on the same device at any temperature. The transistor characteristics have an ON/OFF ratio of 102 at room temperature, while at cryogenic temperatures negative differential resistance (NDR) is observed in the channel. The NDR effect, which is stronger for lower temperatures, can be attributed to a number of reasons from intervalley or intersubband electron transfer to a heavy transport effective mass (low mobility) band or to charge trapping. A germanium-on-insulator technology, provided the material (Ge and oxide) quality improves, may be useful for building circuits that combine conventional FETs with unconventional ambipolar or NDR devices all on the same substrate.

  20. Ferroelectric Properties of Ultrathin Perovskite Heterostructures.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier

    2004-03-01

    Due to their switchable spontaneous polarization, ferroelectric thin films can be used in non-volatile ferroelectric random access memories (FeRAMs). Recently, 30 Gbit/cm^2 data storage densities have been demonstrated for Pb(Zr_0.2Ti_0.8)O3 films on a metallic oxide electrode (T. Tybell et al.), Phys. Rev. Lett. 89, 097601 (2002). While industry's demands for ultrahigh density information storage imposes a reduction of the cell-sizes and thicknesses of the ferroelectric thin films, fundamental questions concerning thickness dependence of ferroelectricity and related properties becomes crucial. Using a first-principles density-functional-theory approach (J. M. Soler et al.), J. Phys.: Condens. Matter 14, 2745 (2002) we have simulated the behaviour at 0 K of a typical ferroelectric capacitor epitaxially grown on a SrTiO3 substrate and made of an ultrathin film of BaTiO3 in between two SrRuO3 electrodes in short circuit (J. Junquera and Ph. Ghosez, Nature 422), 506 (2003). Both the electrical and the mechanical boundary conditions were properly considered in the calculations. We predict the existence of a critical thickness for ferroelectricity of about six unit cells (26 Ang), and relate it to an incomplete screening of the depolarizing field by real metallic electrodes. Transposing these ideas into a first-principles-based model Hamiltonian, (U. V. Waghmare and K. M. Rabe, Phys. Rev. B 55), 6161 (1997) and using Monte Carlo simulations, we have analyzed the temperature dependence of the thickness evolution of the polarization and tetragonality of the samples, as well as the piezoelectric and dielectric tensors. Our theoretical results show good agreement with very recent experimental measurements.

  1. Design and model of wideband absorber made of ultrathin metamaterial structures

    NASA Astrophysics Data System (ADS)

    Sellier, Alexandre; Teperik, Tatiana V.; Burokur, Shah Nawaz; Sabanowski, Guy; Piau, Gérard-Pascal; de Lustrac, André

    2014-08-01

    A planar microwave ultrathin broadband absorber is proposed. It is composed of metallic patterns arranged on a dielectric material which is backed by a copper plate. The patterns of different dimensions allow to judiciously design absorption peaks at specific frequencies of interest. These peaks are due to the mode resonances of the cavities formed by the metallic patches, the dielectric substrate and the copper plate. In order to widen the absorption bandwidth, patterns of different dimensions are used, together with the different modes of these cavities. Numerical and experimental results are presented to validate the proposed method at microwave frequencies. It is also shown that the use of a composite air dielectric substrate supporting the metallic patterns helps to increase the absorption level.

  2. Preparation of patterned ultrathin polymer films.

    PubMed

    Yang, Huige; Su, Meng; Li, Kaiyong; Jiang, Lei; Song, Yanlin; Doi, Masao; Wang, Jianjun

    2014-08-12

    Though patterned ultrathin polymer films (<100 nm) are of great importance in the fields of sensors and nanoelectronic devices, the fabrication of patterned ultrathin polymer films remains a great challenge. Herein, patterned ultrathin polymer films are fabricated facilely on hydrophobic substrates with different hydrophilic outline patterns by the pinning of three-phase contact lines of polymer solution on the hydrophilic outlines. This method is universal for most of the water-soluble polymers, and poly(vinyl alcohol) (PVA) has been selected as a model polymer due to its biocompatibility and good film-forming property. The results indicate that the morphologies of ultrathin polymer films can be precisely adjusted by the size of the hydrophilic outline pattern. Specifically, patterned hydrophilic outlines with sizes of 100, 60, and 40 μm lead to the formation of concave-shaped ultrathin PVA films, whereas uniform ultrathin PVA films are formed on 20 and 10 μm patterned substrates. The controllabilities of morphologies can be interpreted through the influences of the slip length and coffee ring effect. Theoretical analysis shows that when the size of the hydrophilic outline patterns is smaller than a critical value, the coffee ring effect disappears and uniform patterned ultrathin polymer films can be formed for all polymer concentrations. These results provide an effective methodology for the fabrication of patterned ultrathin polymer films and enhance the understanding of the coffee ring effect.

  3. Surface cleaning effects on reliability for devices with ultrathin oxides or oxynitrides

    NASA Astrophysics Data System (ADS)

    Lai, Kafai; Hao, Ming-Yin; Chen, Wei-Ming; Lee, Jack C.

    1994-09-01

    A new wafer cleaning procedure has been developed for ultra-thin thermal oxidation process (Ultrathin thermal oxides (48 angstrom) and oxynitrides grown in N2O (42 angstrom) were prepared using this new cleaning and other commonly used cleaning methods to investigate the effects of surface preparation on dielectric integrity. It has been found that this two-dip method produces dielectrics with reduced leakage current and stress-induced leakage current, which are believed to be the critical parameters for ultrathin oxides. Furthermore, this new cleaning procedure improves both intrinsic and defect-related breakdown as well as the uniformity of the current- voltage characteristics across a 4-inch wafer. The methanol/HF dip time has also been optimized. The improvement is believed to be due to enhanced silicon surface passivation by hydrogen, the reduced surface micro-roughness and the absence of native oxide.

  4. Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Maity, N. P.; Thakur, R. R.; Maity, Reshmi; Thapa, R. K.; Baishya, S.

    2016-10-01

    In this paper, the interface charge densities (Dit) are studied and analyzed for ultra thin dielectric metal oxide semiconductor (MOS) devices using different high-k dielectric materials such as Al2O3, ZrO2 and HfO2. The Dit have been calculated by a new approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with high-k. For the same oxide thickness, SiO2 has the lowest Dit and found to be the order of 1011cm-2eV-1. Linear increase in Dit has been observed as the dielectric constant of the oxide increases. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1×1017cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  5. Dewetting of ultrathin solid films.

    PubMed

    Pierre-Louis, O; Chame, A; Saito, Y

    2009-11-06

    Ultrathin crytalline solid films are found to dewet with a faceted rim. In the case of heterogeneous dewetting initiated from a linear trench or from periodically arranged holes, the dewetted area expands either with a faceted multilayer rim or in a layer-by-layer fashion. In the case of homogeneous dewetting, holes are accompanied with multilayer rims and the uncoverage increases as a power law of time. Results of kinetic Monte Carlo simulations are elucidated within the frame of nucleation theory and surface diffusion limited dynamics.

  6. Hybrid gate dielectric materials for unconventional electronic circuitry.

    PubMed

    Ha, Young-Geun; Everaerts, Ken; Hersam, Mark C; Marks, Tobin J

    2014-04-15

    Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry. However, it does not satisfy many of the performance requirements for the aforementioned semiconductors due to its relatively low dielectric constant and intransigent processability. High-k inorganics such as hafnium dioxide (HfO2) or zirconium dioxide (ZrO2) offer some increases in performance, but scientists have great difficulty depositing these materials as smooth films at temperatures compatible with flexible plastic substrates. While various organic polymers are accessible via chemical synthesis and readily form films from solution, they typically exhibit low capacitances, and the corresponding transistors operate at unacceptably high voltages. More recently, researchers have combined the favorable properties of high-k metal oxides and π-electron organics to form processable, structurally well-defined, and robust self-assembled multilayer nanodielectrics, which enable high-performance transistors with a wide variety of unconventional semiconductors. In this Account, we review recent advances in organic-inorganic hybrid gate dielectrics, fabricated by multilayer self-assembly, and their remarkable synergy with unconventional semiconductors. We first discuss the principals and functional

  7. Silicon nanowires with high-k hafnium oxide dielectrics for sensitive detection of small nucleic acid oligomers.

    PubMed

    Dorvel, Brian R; Reddy, Bobby; Go, Jonghyun; Duarte Guevara, Carlos; Salm, Eric; Alam, Muhammad Ashraful; Bashir, Rashid

    2012-07-24

    Nanobiosensors based on silicon nanowire field effect transistors offer advantages of low cost, label-free detection, and potential for massive parallelization. As a result, these sensors have often been suggested as an attractive option for applications in point-of-care (POC) medical diagnostics. Unfortunately, a number of performance issues, such as gate leakage and current instability due to fluid contact, have prevented widespread adoption of the technology for routine use. High-k dielectrics, such as hafnium oxide (HfO(2)), have the known ability to address these challenges by passivating the exposed surfaces against destabilizing concerns of ion transport. With these fundamental stability issues addressed, a promising target for POC diagnostics and SiNWFETs has been small oligonucleotides, more specifically, microRNA (miRNA). MicroRNAs are small RNA oligonucleotides which bind to mRNAs, causing translational repression of proteins, gene silencing, and expressions are typically altered in several forms of cancer. In this paper, we describe a process for fabricating stable HfO(2) dielectric-based silicon nanowires for biosensing applications. Here we demonstrate sensing of single-stranded DNA analogues to their microRNA cousins using miR-10b and miR-21 as templates, both known to be upregulated in breast cancer. We characterize the effect of surface functionalization on device performance using the miR-10b DNA analogue as the target sequence and different molecular weight poly-l-lysine as the functionalization layer. By optimizing the surface functionalization and fabrication protocol, we were able to achieve <100 fM detection levels of the miR-10b DNA analogue, with a theoretical limit of detection of 1 fM. Moreover, the noncomplementary DNA target strand, based on miR-21, showed very little response, indicating a highly sensitive and highly selective biosensing platform.

  8. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    NASA Astrophysics Data System (ADS)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry-Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  9. Ultrathin, flexible organic-inorganic hybrid solar cells based on silicon nanowires and PEDOT:PSS.

    PubMed

    Sharma, Manisha; Pudasaini, Pushpa Raj; Ruiz-Zepeda, Francisco; Elam, David; Ayon, Arturo A

    2014-03-26

    Recently, free-standing, ultrathin, single-crystal silicon (c-Si) membranes have attracted considerable attention as a suitable material for low-cost, mechanically flexible electronics. In this paper, we report a promising ultrathin, flexible, hybrid solar cell based on silicon nanowire (SiNW) arrays and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The free-standing, ultrathin c-Si membranes of different thicknesses were produced by KOH etching of double-side-polished silicon wafers for various etching times. The processed free-standing silicon membranes were observed to be mechanically flexible, and in spite of their relatively small thickness, the samples tolerated the different steps of solar cell fabrication, including surface nanotexturization, spin-casting, dielectric film deposition, and metallization. However, in terms of the optical performance, ultrathin c-Si membranes suffer from noticeable transmission losses, especially in the long-wavelength region. We describe the experimental performance of a promising light-trapping scheme in the aforementioned ultrathin c-Si membranes of thicknesses as small as 5.7 μm employing front-surface random SiNW texturization in combination with a back-surface distribution of silver (Ag) nanoparticles (NPs). We report the enhancement of both the short-circuit current density (JSC) and the open-circuit voltage (VOC) that has been achieved in the described devices. Such enhancement is attributable to the plasmonic backscattering effect of the back-surface Ag NPs, which led to an overall 10% increase in the power conversion efficiency (PCE) of the devices compared to similar structures without Ag NPs. A PCE in excess of 6.62% has been achieved in the described devices having a c-Si membrane of thickness 8.6 μm. The described device technology could prove crucial in achieving an efficient, low-cost, mechanically flexible photovoltaic device in the near future.

  10. Physicochemically functional ultrathin films by interfacial polymerization

    DOEpatents

    Lonsdale, Harold K.; Babcock, Walter C.; Friensen, Dwayne T.; Smith, Kelly L.; Johnson, Bruce M.; Wamser, Carl C.

    1990-01-01

    Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclsoed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers.

  11. Physicochemically functional ultrathin films by interfacial polymerization

    DOEpatents

    Lonsdale, H.K.; Babcock, W.C.; Friensen, D.T.; Smith, K.L.; Johnson, B.M.; Wamser, C.C.

    1990-08-14

    Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclosed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers. 3 figs.

  12. Electrostatic Gating of Ultrathin Films

    NASA Astrophysics Data System (ADS)

    Goldman, A. M.

    2014-07-01

    Electrostatic gating of ultrathin films can be used to modify electronic and magnetic properties of materials by effecting controlled alterations of carrier concentration while, in principle, not changing the level of disorder. As such, electrostatic gating can facilitate the development of novel devices and can serve as a means of exploring the fundamental properties of materials in a manner far simpler than is possible with the conventional approach of chemical doping. The entire phase diagram of a compound can be traversed by changing the gate voltage. In this review, we survey results involving conventional field effect devices as well as more recent progress, which has involved structures that rely on electrochemical configurations such as electric double-layer transistors. We emphasize progress involving thin films of oxide materials such as high-temperature superconductors, magnetic oxides, and oxides that undergo metal-insulator transitions.

  13. Depolarizing field in ultrathin electrocalorics

    NASA Astrophysics Data System (ADS)

    Glazkova, E.; Chang, C.-M.; Lisenkov, S.; Mani, B. K.; Ponomareva, I.

    2015-08-01

    Ferroelectric thin films are considered to be among the top candidates for room-temperature electrocaloric materials as they exhibit excellent electric properties and allow application of record high electric fields. At the same time, downsizing of ferroelectric electrocalorics brings about an unwanted but unavoidable depolarizing field that could critically alter or even destroy the films' electrocaloric properties. We use an atomistic first-principles-based computational approach that does not rely on the use of Maxwell relations (i) to reveal the critical role of the depolarizing field on the electrocaloric properties of ferroelectric ultrathin films, (ii) to demonstrate the contribution of nanodomains to the electrocaloric effect in such films, and (iii) to revisit the potential limitations of the indirect approach to study electrocaloric effect in nanoscale ferroelectrics.

  14. Dielectric metasurfaces

    NASA Astrophysics Data System (ADS)

    Valentine, Jason

    While plasmonics metasurfaces have seen much development over the past several years, they still face throughput limitations due to ohmic losses. On the other hand, dielectric resonators and associated metasurfaces can eliminate the issue of ohmic loss while still providing the freedom to engineer the optical properties of the composite. In this talk, I will present our recent efforts to harness this freedom using metasurfaces formed from silicon and fabricated using CMOS-compatible techniques. Operating in the telecommunications band, I will discuss how we have used this platform to realize a number of novel functionalities including wavefront control, near-perfect reflection, and high quality factor resonances. In many cases the optical performance of these silicon-based metasurfaces can surpass their plasmonic counterparts. Furthermore, for some cases the surfaces are more amenable to large-area fabrication techniques.

  15. High k dielectrics on silicon: Effects of processing on nanostructure and properties

    NASA Astrophysics Data System (ADS)

    Das, Anirban

    High permittivity hafnia, HfO2, and hafnium silicate, HfSiO 4, are the most promising candidates to replace oxide (SiOx) or oxynitride (SiOxNy) based gate dielectrics in future generation CMOS devices. In this thesis, the effects of processing (deposition techniques, post deposition annealing, nitridation) on nanostructure evolution (crystallization, phase segregation, interlayer growth), changes in nanochemistry (impurity content, interfacial reaction, interdiffusion, oxygen diffusion, paramagnetic charge centers) and properties (EOT, oxide charges) of atomic layer deposited (ALD) Hf-O/Hf-Si-O films on Si, with different interlayers (IL), were studied. A variety of analytical techniques including XRD, RBS, XPS, SIMS, AFM, HRTEM, STEM-EELS and EPR were used. In general, PEALD Hf-O films deposited using metal-organic precursors showed a higher C and H and lower Cl content compared to thermal ALD films using halide based precursors. Also, as-deposited ALD films (Hf-O/IL/Si) showed the formation of Hf-O-Si bonds at the Hf-O/IL interface, with increasing tendency in the presence of a chemical oxide interlayer and upon oxygen annealing. Upon post deposition annealing (PDA) of ALD Hf-O films up to 1000°C, m-HfO2 was the stable crystalline phase. It was observed that the chemical oxide interlayer grew significantly during PDA in oxygen, the rate of which was a f (t, T) due to oxygen diffusion. Additionally, an annealed Hf-O stack (i.e., target Hf-O thickness of 4.0 nm/1.2 nm nitrided chemical oxide interlayer/Si) showed a chemically diffused HfSiOx region (2 nm) in between pure HfO2 (2 nm) and the interlayer (1.2 nm) as a result of interdiffusion and interfacial reactions. Therefore, a three-layer capacitor model was used to determine the respective contributions to the total EOT. Moreover, to correlate the presence of defects with density of interfacial states, as-deposited ALD Hf-O/chemical oxide IL/Si stacks were shown to be EPR active at 8K, due to Pb0, Pb1 type

  16. Atomic Layer Deposition of High-k Dielectrics Using Supercritical CO2

    NASA Astrophysics Data System (ADS)

    Shende, Rajesh

    2005-03-01

    Atomic layer deposition (ALD) of high-κdielectric was performed in supercritical CO2 (SCCO2), using a two-step reaction sequence. In step one, tetraethoxy silane (TEOS) precursor was injected in SCCO2 at 80-100 C and 50 MPa pressure to obtain a chemisorbed surface monolayer, which was then oxidized into SiO2 using peroxide entrained in SCCO2. ALD process was controlled by estimating precursor solubility and its mass transport with respect to the density of SCCO2, and correlating these parameters with precursor injection volume. In the ALD process, 7 pulses of precursor were used anticipating deposition of one atomic layer in each of the pulses. The thickness of the SiO2 atomic layers deposited using SCCO2 was measured by variable angle spectroscopic ellipsometry (VASE), and the C-V measurements were also performed. The result obtained using VASE indicates that there were 7 monolayers of SiO2 with total thickness of 35 å, and the dielectric constant of the deposited layers was 4.0±0.1. Our initial findings clearly demonstrate that SCCO2 is capable of atomic layer deposition of high quality dielectric films at very low process temperatures preventing interface reaction. More research is in progress to achieve ALD of HfO2 and TiO2 in SCCO2.

  17. Design and fabrication of multilayer dielectric gratings for spectral beam combining

    NASA Astrophysics Data System (ADS)

    Cho, Hyun-Ju; Kim, Hyun-Tae; Lee, Yong-Soo

    2015-08-01

    Metal gratings are mostly used on low energy optics, but it has low laser damage threshold. Spectral beam combining is a method to make high power laser beam using diffraction gratings. Multilayer dielectric (MLD) high reflectance mirror is designed for high efficiency gratings using HfO2 and SiO2 for high laser damage threshold. On the top of the mirror, polarization dependent SiO2 grating structure is simulated by finite domain time division (FDTD) method at 1055nm for spectral beam combining. To estimate the far field diffraction characteristics, we first calculate near field electromagnetic wave properties at the substrate region and these are transformed to angular diffraction characteristics at about 1 meter apart from the grating. Multilayer dielectric mirror is deposited by electron beam evaporation method at the substrate temperature 250°C. Four types of high efficiency MLD gratings are selected and these are fabricated by lithography and reactive ion etching method. To fabricate the designed submicron structure, 4X stepper is used for pattern formation on the photo resistor. We use fused silica as a substrate and additional dummy silicon wafer substrates are used for grating structure confirmation using scanning electron microscope. The diffraction efficiencies are measured and these are compared with simulated results.

  18. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    PubMed Central

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  19. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    NASA Astrophysics Data System (ADS)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-07-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.

  20. Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

    NASA Astrophysics Data System (ADS)

    Madan, Jaya; Gupta, R. S.; Chaujar, Rishu

    2015-09-01

    In this work, an analytical drain current model for gate dielectric engineered (hetero dielectric)-dual material gate-gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been developed. Parabolic approximation has been used to solve the two-dimensional (2D) Poisson equation with appropriate boundary conditions and continuity equations to evaluate analytical expressions for surface potential, electric field, tunneling barrier width and drain current. Further, the analog performance of the device is studied for three high-k dielectrics (Si3N4, HfO2, and ZrO2), and it has been investigated that the problem of lower ION, can be overcome by using the hetero-gate architecture. Moreover, the impact of scaling the gate oxide thickness and bias variations has also been studied. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10-4 A. The effectiveness of the proposed model is validated by comparing it with ATLAS device simulations.

  1. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

    NASA Astrophysics Data System (ADS)

    Yang, Jialing; Eller, Brianna S.; Nemanich, Robert J.

    2014-09-01

    The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH4OH treatment and an in-situ elevated temperature NH3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ˜1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO2, Al2O3, and SiO2) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO2, Al2O3, and SiO2 with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.

  2. Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high- κ dielectrics on Ge without interfacial layers

    NASA Astrophysics Data System (ADS)

    Chu, L. K.; Chu, R. L.; Lin, T. D.; Lee, W. C.; Lin, C. A.; Huang, M. L.; Lee, Y. J.; Kwo, J.; Hong, M.

    2010-09-01

    Without using any interfacial passivation layers, high- κ dielectric Y 2O 3, HfO 2, and Ga 2O 3(Gd 2O 3) [GGO], by electron beam evaporation in ultra-high-vacuum (UHV), have been directly deposited on Ge substrate. Comprehensive investigations have been carried out to study the oxide/Ge interfaces chemically, structurally, and electronically: hetero-structures of all the studied oxides on Ge are highly thermally stable with annealing to 500 °C, and their interfaces remain atomically sharp. The electrical analyses have been conducted on metal-oxide-semiconductor (MOS) devices, i.e. MOS capacitors (MOSCAPs) and MOS field-effect-transistors (MOSFETs). Dielectrics constants of the Y 2O 3, HfO 2, and GGO have been extracted to be ˜17, 20, and 13-15, respectively, indicating no interfacial layer formation with 500 °C annealing. A low interfacial density of states ( Dits), as low as 3 × 10 11 cm -2 eV -1, has been achieved for GGO/Ge near mid-gap along with a high Fermi-level movement efficiency as high as 80%. The GGO/Ge pMOSFETs with TiN as the metal gate have yielded very high-performances, in terms of 496 μA/μm, 178 μS/μm, and 389 cm 2/V s in saturation drain current density, maximum transconductance, and effective hole mobility, respectively. The gate width and gate length of the MOSFET are 10 μm and 1 μm.

  3. Characterization of ALD Beryllium Oxide as a Potential High- k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

    NASA Astrophysics Data System (ADS)

    Johnson, Derek W.; Yum, Jung Hwan; Hudnall, Todd W.; Mushinski, Ryan M.; Bielawski, Christopher W.; Roberts, John C.; Wang, Wei-E.; Banerjee, Sanjay K.; Harris, H. Rusty

    2014-01-01

    The chemical and electrical characteristics of atomic layer deposited (ALD) beryllium oxide (BeO) on GaN were studied via x-ray photoelectron spectroscopy, current-voltage, and capacitance-voltage measurements and compared with those of ALD Al2O3 and HfO2 on GaN. Radiofrequency (RF) and power electronics based on AlGaN/GaN high-electron-mobility transistors are maturing rapidly, but leakage current reduction and interface defect ( D it) minimization remain heavily researched. BeO has received recent attention as a high- k gate dielectric due to its large band gap (10.6 eV) and thermal stability on InGaAs and Si, but little is known about its performance on GaN. Unintentionally doped GaN was cleaned in dilute aqueous HCl immediately prior to BeO deposition (using diethylberyllium and H2O precursors). Formation of an interfacial layer was observed in as-deposited samples, similar to the layer formed during ALD HfO2 deposition on GaN. Postdeposition anneal (PDA) at 700°C and 900°C had little effect on the observed BeO binding state, confirming the strength of the bond, but led to increased Ga oxide formation, indicating the presence of unincorporated oxygen in the dielectric. Despite the interfacial layer, gate leakage current of 1.1 × 10-7 A/cm2 was realized, confirming the potential of ALD BeO for use in low-leakage AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors.

  4. Quantum chemistry study of dielectric materials deposition

    NASA Astrophysics Data System (ADS)

    Widjaja, Yuniarto

    The drive to continually decrease the device dimensions of integrated circuits in the microelectronics industry requires that deposited films approach subnanometer thicknesses. Hence, a fundamental understanding of the physics and chemistry of film deposition is important to obtain better control of the properties of the deposited film. We use ab initio quantum chemistry calculations to explore chemical reactions at the atomic level. Important thermodynamic and kinetic parameters are then obtained, which can then be used as inputs in constructing first-principles based reactor models. Studies of new systems for which data are not available can be conducted as well. In this dissertation, we use quantum chemistry simulations to study the deposition of gate dielectrics for metal-oxide-semiconductor (MOS) devices. The focus of this study is on heterogeneous reactions between gaseous precursors and solid surfaces. Adsorbate-surface interactions introduce additional degrees of complexity compared to the corresponding gas-phase or solid-state reactions. The applicability and accuracy of cluster approximations to represent solid surfaces are first investigated. The majority of our results are obtained using B3LYP density functional theory (DFT). The structures of reactants, products, and transition states are obtained, followed by calculations of thermochemical and kinetic properties. Whenever experimental data are available, qualitative and/or quantitative comparisons are drawn. Atomistic mechanisms and the energetics of several reactions leading to the deposition of SiO2, Si3N4, and potential new high-kappa materials such as ZrO2, HfO2, and Al 2O3 have been explored in this dissertation. Competing reaction pathways are explored for each of the deposition reactions studied. For example, the potential energy surface (PES) for ZrO2 ALD shows that the reactions proceed through a trapping-mediated mechanism, which results in a competition between desorption and decomposition

  5. Lithography-Free Broadband Ultrathin-Film Absorbers with Gap-Plasmon Resonance for Organic Photovoltaics.

    PubMed

    Choi, Minjung; Kang, Gumin; Shin, Dongheok; Barange, Nilesh; Lee, Chang-Won; Ko, Doo-Hyun; Kim, Kyoungsik

    2016-05-25

    Strategies to confine electromagnetic field within ultrathin film emerge as essential technologies for applications from thin-film solar cells to imaging and sensing devices. We demonstrate a lithography-free, low-cost, large-scale method to realize broadband ultrathi-film metal-dielectric-metal (MDM) absorbers, by exploiting gap-plasmon resonances for strongly confined electromagnetic field. A two-steps method, first organizing Au nanoparticles via thermal dewetting and then transferring the nanoparticles to a spacer-reflector substrate, is used to achieve broader absorption bandwidth by manipulating geometric shapes of the top metallic layer into hemiellipsoids. A fast-deposited nominal Au film, instead of a conventional slow one, is employed in the Ostwald ripening process to attain hemiellipsoidal nanoparticles. A polymer supported transferring step allows a wider range of dewetting temperature to manipulate the nanoparticles' shape. By incorporating circularity with ImageJ software, the geometries of hemiellipsoidal nanoparticles are quantitatively characterized. Controlling the top geometry of MDM structure from hemisphere to hemiellipsoid increases the average absorption at 500-900 nm from 23.1% to 43.5% in the ultrathin film and full width at half-maximum of 132-324 nm, which is consistently explained by finite-difference time-domain simulation. The structural advantages of our scheme are easily applicable to thin-film photovoltaic devices because metal electrodes can act as metal reflectors and semiconductor layers as dielectric spacers.

  6. Spatially and momentum resolved energy electron loss spectra from an ultra-thin PrNiO{sub 3} layer

    SciTech Connect

    Kinyanjui, M. K. Kaiser, U.; Benner, G.; Pavia, G.; Boucher, F.; Habermeier, H.-U.; Keimer, B.

    2015-05-18

    We present an experimental approach which allows for the acquisition of spectra from ultra-thin films at high spatial, momentum, and energy resolutions. Spatially and momentum (q) resolved electron energy loss spectra have been obtained from a 12 nm ultra-thin PrNiO{sub 3} layer using a nano-beam electron diffraction based approach which enabled the acquisition of momentum resolved spectra from individual, differently oriented nano-domains and at different positions of the PrNiO{sub 3} thin layer. The spatial and wavelength dependence of the spectral excitations are obtained and characterized after the analysis of the experimental spectra using calculated dielectric and energy loss functions. The presented approach makes a contribution towards obtaining momentum-resolved spectra from nanostructures, thin film, heterostructures, surfaces, and interfaces.

  7. Condition for unity absorption in an ultrathin and highly lossy film in a Gires-Tournois interferometer configuration.

    PubMed

    Park, Junghyun; Kim, Soo Jin; Brongersma, Mark L

    2015-05-01

    We present a condition for unity absorption for a Gires-Tournois interferometer configuration constructed from an ultrathin and highly lossy film on top of metallic mirror. From the impedance matching condition in the transmission line theory, we identify a solution space for the required complex refractive index of the lossy film in various film thickness and dielectric constants of the metallic mirror. It is shown that strong absorption requires the imaginary part of the refractive index of the ultrathin lossy film be larger than 0.64, and the physical origin of this condition is elucidated. The proposed method is useful in identifying candidate semiconductor materials that can be used as the lossy film in a unity-absorption Gires-Tournois interferometer configuration and designing the thickness of this film to maximize absorption.

  8. Ultra-thin films with highly absorbent porous media fine-tunable for coloration and enhanced color purity.

    PubMed

    Yoo, Young Jin; Lim, Jin Ha; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-03-02

    We demonstrate ultra-thin, fine-tunable optical coatings with enhanced color purity based on highly absorbent porous media on a metal substrate. We show that the color range provided by these ultra-thin film coatings can be extended by making the absorptive dielectric layer porous. Oblique angle deposition (OAD) of a thin (10-25 nm) germanium (Ge) film by e-beam evaporation onto a thick gold substrate yields controlled porosity. Reflectance spectra and color representations from both calculations and experiments verify the enhancement of resonance tunability and color purity in the nano-tailored coatings. Angle independent reflection properties, and the applicability of such porous Ge on various metal substrates, indicate the strength of these concepts.

  9. Optical absorption enhancement in 40 nm ultrathin film silicon solar cells assisted by photonic and plasmonic modes

    NASA Astrophysics Data System (ADS)

    Saravanan, S.; Dubey, R. S.

    2016-10-01

    Presently, energy problems and environmental issues have attracted the scientific community for the development of cost-effective and high-performance solar cells. Thin film solar cells are cheaper but weak light absorption in longer wavelength has demanded an efficient light trapping scheme for the better harvesting of solar radiation to a maximum possibility. In this paper, we numerically explore the design efforts of an ultrathin film silicon solar cell, integrated with top dielectric and bottom metal gratings. The proposed design is influenced by the localized surface plasmon modes, surface plasmon polariton and optical resonances which leads to the optimal harvesting of sunlight within 40 nm thick absorbing layer. The optimized design of solar cell shows enhanced light absorption with cell efficiency ∼25% at normal transverse magnetic polarization condition. Our design approach assisted by photonic and plasmonic modes is promising for the realization of new generation, low-cost ultrathin film solar cells.

  10. On electromagnetic radiation under destruction of ultrathin glass fibers

    NASA Astrophysics Data System (ADS)

    Devyatkin, E. A.; Simonov, I. V.; Sirotin, A. A.

    2009-02-01

    We study how the characteristics of electric signals emitted in the course of vibrations and fracture of ultrathin fibers under tension depend on the geometric parameters and physical properties of the fibers. A unique highly sensitive experimental plant was developed, and glass fibers of diameter 6.5, 10, 18, 150µm, as well as polyethylene fibers of thickness 0.2-0.06mm, were tested. It turned out that the signals emitted by fracture of fibers made of different dielectric materials ( d < 20µm) are qualitatively the same in shape and have a negative phase of length 100-400µs and a much longer positive phase. An electric signal induced by a fiber thinner than a human hair by an order of magnitude was recorded for the first time. Unexpectedly, the average values of amplitudes of signals for fibers significantly different in diameter turned out to be close to each other. This can be explained by the well-known fact that the number of fragments in fracture increases with the glass strength (a scale effect). The potentialities of the method for measuring electric signals in studying the spectra of fiber vibrations were discovered.

  11. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

    NASA Astrophysics Data System (ADS)

    Zhu, Y.; Clavel, M.; Goley, P.; Hudait, M. K.

    2014-10-01

    Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-κ dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs0.38Sb0.62, indicating the potential of utilizing these dielectrics on GaAs0.38Sb0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al2O3 and HfO2 showed a conduction band offset of >2 eV on GaAs0.38Sb0.62, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs1-ySby material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs0.38Sb0.62, provides a pathway to utilize GaAs1-ySby materials in future microelectronic and optoelectronic applications.

  12. Ultrathin Colloidal Cesium Lead Halide Perovskite Nanowires.

    PubMed

    Zhang, Dandan; Yu, Yi; Bekenstein, Yehonadav; Wong, Andrew B; Alivisatos, A Paul; Yang, Peidong

    2016-10-12

    Highly uniform single crystal ultrathin CsPbBr3 nanowires (NWs) with diameter of 2.2 ± 0.2 nm and length up to several microns were successfully synthesized and purified using a catalyst-free colloidal synthesis method followed by a stepwise purification strategy. The NWs have bright photoluminescence (PL) with a photoluminescence quantum yield (PLQY) of about 30% after surface treatment. Large blue-shifted UV-vis absorption and PL spectra have been observed due to strong two-dimensional quantum confinement effects. A small angle X-ray scattering (SAXS) pattern shows the periodic packing of the ultrathin NWs along the radial direction, demonstrates the narrow radial distribution of the wires, and emphasizes the deep intercalation of the surfactants. Despite the extreme aspect ratios of the ultrathin NWs, their composition and the resulting optical properties can be readily tuned by an anion-exchange reaction with good morphology preservation. These bright ultrathin NWs may be used as a model system to study strong quantum confinement effects in a one-dimensional halide perovskite system.

  13. Electrochemical Synthesis of Ultrathin Film Composite Membranes

    DTIC Science & Technology

    1994-08-19

    polymers in pervaporation separations. The interfacial polymerizations we have developed are used to prepare ultrathin films of conductive polymers for... pervaporation -separations, etc. We are continuing this research effort by exploring in particular sensor and pervaporation applications of these coated hollow

  14. Anionically-Conductive Ultrathin Film Composite Membranes

    DTIC Science & Technology

    1994-08-19

    these polymers in pervaporation separations. The interfacial polymerizations we have developed are used to prepare ultrathin films of conductive... pervaporation -separations, etc. We are continuing this research effort by exploring in particular sensor and pervaporation applications of these coated...particular emphasis are in novel biosensors and novel membranes for pervaporation separations. IV. Research Articles. 1. Lei, J.; Menon, V. P.; Martin, C. R

  15. Atomic Structure of Ultrathin Gold Nanowires.

    PubMed

    Yu, Yi; Cui, Fan; Sun, Jianwei; Yang, Peidong

    2016-05-11

    Understanding of the atomic structure and stability of nanowires (NWs) is critical for their applications in nanotechnology, especially when the diameter of NWs reduces to ultrathin scale (1-2 nm). Here, using aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM), we report a detailed atomic structure study of the ultrathin Au NWs, which are synthesized using a silane-mediated approach. The NWs contain large amounts of generalized stacking fault defects. These defects evolve upon sustained electron exposure, and simultaneously the NWs undergo necking and breaking. Quantitative strain analysis reveals the key role of strain in the breakdown process. Besides, ligand-like morphology is observed at the surface of the NWs, indicating the possibility of using AC-HRTEM for surface ligand imaging. Moreover, the coalescence dynamic of ultrathin Au NWs is demonstrated by in situ observations. This work provides a comprehensive understanding of the structure of ultrathin metal NWs at atomic-scale and could have important implications for their applications.

  16. Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Vogel, Eric M.; Brown, George A.

    2003-09-01

    Experimental measurements and simulations are used to provide an overview of key issues with the electrical characterization of metal-oxide-semiconductor (MOS) devices with ultra-thin oxide and alternate gate dielectrics. Experimental issues associated with the most common electrical characterization method, capacitance-voltage (C-V), are first described. Issues associated with equivalent oxide thickness extraction and comparison, interface state measurement, extrinsic defects, and defect generation are then overviewed.

  17. Onset of bonding plasmon hybridization preceded by gap modes in dielectric splitting of metal disks.

    PubMed

    Frederiksen, Maj; Bochenkov, Vladimir E; Ogaki, Ryosuke; Sutherland, Duncan S

    2013-01-01

    Dielectric splitting of nanoscale disks was studied experimentally and via finite-difference time-domain (FDTD) simulations through systematic introduction of multiple ultrathin dielectric layers. Tunable, hybridized dark bonding modes were seen with first-order gap modes preceding the appearance of bonding dipole-dipole disk modes. The observed bright dipolar mode did not show the energy shift expected from plasmon hybridization but activated dark higher order gap modes. Introducing lateral asymmetry was shown to remodel the field distribution resulting in 3D asymmetry that reoriented the dipole orientation away from the dipole of the elementary disk modes.

  18. Highly stable organic field-effect transistors with engineered gate dielectrics (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kippelen, Bernard; Wang, Cheng-Yin; Fuentes-Hernandez, Canek; Yun, Minseong; Singh, Ankit K.; Dindar, Amir; Choi, Sangmoo; Graham, Samuel

    2016-11-01

    Organic field-effect transistors (OFETs) have the potential to lead to low-cost flexible displays, wearable electronics, and sensors. While recent efforts have focused greatly on improving the maximum charge mobility that can be achieved in such devices, studies about the stability and reliability of such high performance devices are relatively scarce. In this talk, we will discuss the results of recent studies aimed at improving the stability of OFETs under operation and their shelf lifetime. In particular, we will focus on device architectures where the gate dielectric is engineered to act simultaneously as an environmental barrier layer. In the past, our group had demonstrated solution-processed top-gate OFETs using TIPS-pentacene and PTAA blends as a semiconductor layer with a bilayer gate dielectric layer of CYTOP/Al2O3, where the oxide layer was fabricated by atomic layer deposition, ALD. Such devices displayed high operational stability with little degradation after 20,000 on/off scan cycles or continuous operation (24 h), and high environmental stability when kept in air for more than 2 years, with unchanged carrier mobility. Using this stable device geometry, simple circuits and sensors operating in aqueous conditions were demonstrated. However, the Al2O3 layer was found to degrade due to corrosion under prolonged exposure in aqueous solutions. In this talk, we will report on the use of a nanolaminate (NL) composed of Al2O3 and HfO2 by ALD to replace the Al2O3 single layer in the bilayer gate dielectric use in top-gate OFETs. Such OFETs were found to operate under harsh condition such as immersion in water at 95 °C. This work was funded by the Department of Energy (DOE) through the Bay Area Photovoltaics Consortium (BAPVC) under Award Number DE-EE0004946.

  19. Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

    NASA Astrophysics Data System (ADS)

    Pandey, G. N.; Kumar, Narendra; Thapa, Khem B.; Ojha, S. P.

    2016-05-01

    Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractive index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.

  20. Observation of Reliability of HfZrOX Gate Dielectric Devices with Different Zr/Hf Ratios

    NASA Astrophysics Data System (ADS)

    Liao, Jing-Chyi; Fang, Yean-Kuen; Tian Hou, Yong; Hsiung Tseng, Wei; Yang, Chih I.; Hsu, Peng Fu; Chao, Yuen Shun; Lin, Kang Cheng; Huang, Kuo Tai; Lee, Tzu Liang; Liang, Meng Sung

    2008-04-01

    The impact of the Zr/Hf ratio on the reliability of a HfZrOX gate dielectric has been investigated in detail. By a frequency-varied charge-pumping method, we found that the density of bulk traps is reduced with increasing Zr content. Also, a comparable Dit value observed by the rising/falling time-varied charge-pumping method suggests that Zr incorporation does not degrade the interface quality. Consequently, mobility increases with increasing Zr content in the HfZrOX dielectric and ˜25% mobility enhancement compared with that of HfO2 can be observed. However, the bulk trap density reduction reaches saturation at a higher Zr content. The improvement in positive-bias temperature instability (PBTI) was also demonstrated by both DC and pulse techniques. The smaller Vth shift in PBTI is attributed to the reduction of fast trapping and the generation of slow traps. Finally, a reduced gate-induced drain leakage current (GIDL) was also observed with increasing Zr content because of the reduction of trap-assisted tunneling in a high-k film.

  1. Spin-Orbit Interaction in High-κ Dielectric Gated Rashba-2D Electron Gas and Mesoscopic Rings

    NASA Astrophysics Data System (ADS)

    Dai, Yanhua; Yuan, Zhuoquan; Stone, Kristjan; Du, Rui-Rui; Xu, Min; Ye, Peide

    2008-03-01

    There is increasing current interest in the quantum interference effect in mesoscopic devices fabricated on a Rashba-2D electron gas (2DEG), where the spin-orbit interaction parameters can be tuned by a potential gate. We explore ring structures that use a gate consisting of thin (5nm-50nm) high-κ dielectric Al2O3 or HfO2 layer and nano-patterned metals. The 2DEG is provided by lattice-matched In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells that have a typical electron density n of 1.5x10^12/cm^2 and mobility μ>=2x10^4cm^2/Vs. The dielectric material was grown by atomic layer deposition. We will present the gate characteristics of Hall bars as well as magnetic transport data from gated mesoscopic rings. The work at Rice is funded by NSF DMR-0706634. Reference: M. Konig et al, Phys. Rev. Lett. 96, 076804 (2006); T. Bergsten et al, Phys. Rev. Lett. 97, 196803 (2006); B. Grbic et al, Phys. Rev. Lett. 99, 176803 (2007).

  2. Ultra-thin plasmonic color filters incorporating free-standing resonant membrane waveguides with high transmission efficiency

    NASA Astrophysics Data System (ADS)

    Wang, Jiaxing; Fan, Qingbin; Zhang, Si; Zhang, Zijie; Zhang, Hui; Liang, Yuzhang; Cao, Xun; Xu, Ting

    2017-01-01

    We propose an ultra-thin plasmonic color filtering device based on subwavelength metal grating engraved on a dielectric membrane waveguide without substrate. As experiments demonstrate, the fabricated free-standing plasmonic color filters have more than 70% transmission efficiency at different resonant wavelengths in the visible spectral region and are capable of generating arbitrary colors. Experimental results are in good agreement with the theoretical calculations. These artificial nanostructured color filtering devices may find potential applications in high resolution color imaging and sensing systems.

  3. Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

    NASA Astrophysics Data System (ADS)

    Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

    2016-03-01

    Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

  4. Ultrasound-responsive ultrathin multiblock copolyamide vesicles

    NASA Astrophysics Data System (ADS)

    Huang, Lei; Yu, Chunyang; Huang, Tong; Xu, Shuting; Bai, Yongping; Zhou, Yongfeng

    2016-02-01

    This study reports the self-assembly of novel polymer vesicles from an amphiphilic multiblock copolyamide, and the vesicles show a special structure with an ultrathin wall thickness of about 4.5 nm and a combined bilayer and monolayer packing model. Most interestingly, the vesicles are ultrasound-responsive and can release the encapsulated model drugs in response to ultrasonic irradiation.This study reports the self-assembly of novel polymer vesicles from an amphiphilic multiblock copolyamide, and the vesicles show a special structure with an ultrathin wall thickness of about 4.5 nm and a combined bilayer and monolayer packing model. Most interestingly, the vesicles are ultrasound-responsive and can release the encapsulated model drugs in response to ultrasonic irradiation. Electronic supplementary information (ESI) available: Details of experiments and characterization, and FT-IR, TEM, DPD, FL and micro-DSC results. See DOI: 10.1039/c5nr08596a

  5. Ultra-thin plasma radiation detector

    DOEpatents

    Friedman, Peter S.

    2017-01-24

    A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

  6. Resonant dielectric metamaterials

    DOEpatents

    Loui, Hung; Carroll, James; Clem, Paul G; Sinclair, Michael B

    2014-12-02

    A resonant dielectric metamaterial comprises a first and a second set of dielectric scattering particles (e.g., spheres) having different permittivities arranged in a cubic array. The array can be an ordered or randomized array of particles. The resonant dielectric metamaterials are low-loss 3D isotropic materials with negative permittivity and permeability. Such isotropic double negative materials offer polarization and direction independent electromagnetic wave propagation.

  7. Inductive dielectric analyzer

    NASA Astrophysics Data System (ADS)

    Agranovich, Daniel; Polygalov, Eugene; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri

    2017-03-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions.

  8. Handbook of Infrared Spectroscopy of Ultrathin Films

    NASA Astrophysics Data System (ADS)

    Tolstoy, Valeri P.; Chernyshova, Irina; Skryshevsky, Valeri A.

    2003-05-01

    Because of the rapid increase in commercially available Fourier transform infrared spectrometers and computers over the past ten years, it has now become feasible to use IR spectrometry to characterize very thin films at extended interfaces. At the same time, interest in thin films has grown tremendously because of applications in microelectronics, sensors, catalysis, and nanotechnology. The Handbook of Infrared Spectroscopy of Ultrathin Films provides a practical guide to experimental methods, up-to-date theory, and considerable reference data, critical for scientists who want to measure and interpret IR spectra of ultrathin films. This authoritative volume also: Offers information needed to effectively apply IR spectroscopy to the analysis and evaluation of thin and ultrathin films on flat and rough surfaces and on powders at solid-gaseous, solid-liquid, liquid-gaseous, liquid-liquid, and solid-solid interfaces. Provides full discussion of theory underlying techniques Describes experimental methods in detail, including optimum conditions for recording spectra and the interpretation of spectra Gives detailed information on equipment, accessories, and techniques Provides IR spectroscopic data tables as appendixes, including the first compilation of published data on longitudinal frequencies of different substances Covers new approaches, such as Surface Enhanced IR spectroscopy (SEIR), time-resolved FTIR spectroscopy, high-resolution microspectroscopy and using synchotron radiation

  9. Defects and metrology of ultrathin resist films

    NASA Astrophysics Data System (ADS)

    Okoroanyanwu, Uzodinma; Cobb, Jonathan L.; Dentinger, Paul M.; Henderson, Craig C.; Rao, Veena; Monahan, Kevin M.; Luo, David; Pike, Christopher

    2000-06-01

    Defectivity in spin-coated, but unpatterned ultrathin resist (UTR) films (ultrathin resists. Four resist samples formulated from the same Shipley UV6 polymer batch and having the same polymer molecular weight properties but different viscosities, were spin-coated at spin speeds ranging from 1000 to 5000 RPM on a production-grade track in a Class 1 pilot line facility. Defect inspection was carried out with KLA SP1/TBI tool, while defect review was carried out with JEOL 7515 SEM tool and KLA Ultrapointe Confocal Review Station (CRS) Microscope. The results obtained are related to the physical properties of the resist polymers, as well as to spin coating parameters. Also, the results of the defect inspection, review, characterization, and pareto are compared to those obtained on baseline thick resists (>= 3500 Angstrom) processed under similar condition as the ultra-thin resists. The results show that for a well-optimized coating process and within the thickness range explored (800 - 4200 Angstrom), there is no discernible dependence of defectivity on film thickness of the particular resists studied and on spin speed. Also assessed is the capability of the current metrology toolset for inspecting, reviewing, and classifying the various types of defects in UTR films.

  10. High-Magnetization FeCo Nanochains with Ultrathin Interfacial Gaps for Broadband Electromagnetic Wave Absorption at Gigahertz.

    PubMed

    Zhang, Xuefeng; Li, Yixing; Liu, Rongge; Rao, Yi; Rong, Huawei; Qin, Gaowu

    2016-02-10

    Superparamagnetic FeCo nanochains consisting of assembled ∼25 nm nanoparticles and ∼1 nm gaps are synthesized by facial wet-chemical route and exhibit significant electromagnetic absorption at gigahertz. Both the dielectric and magnetic loss factors present dual-resonance behaviors at 2-18 GHz frequencies, originated from the asymmetric architecture of the cubic FeCo particles that assembled in a one-dimensional chain structure. Theoretical analyses uncover that the origins of the enhancement of electromagnetic losses are ascribed to the high magnetization (228 emu/g) and the ultrathin gaps (∼1 nm), which enhances the Snoek limit and induces anisotropic dielectric polarizations, consequently constructing a proper electromagnetic match.

  11. Ultrathin niobium nanofilms on fiber optical tapers – a new route towards low-loss hybrid plasmonic modes

    PubMed Central

    Wieduwilt, Torsten; Tuniz, Alessandro; Linzen, Sven; Goerke, Sebastian; Dellith, Jan; Hübner, Uwe; Schmidt, Markus A.

    2015-01-01

    Due to the ongoing improvement in nanostructuring technology, ultrathin metallic nanofilms have recently gained substantial attention in plasmonics, e.g. as building blocks of metasurfaces. Typically, noble metals such as silver or gold are the materials of choice, due to their excellent optical properties, however they also possess some intrinsic disadvantages. Here, we introduce niobium nanofilms (~10 nm thickness) as an alternate plasmonic platform. We demonstrate functionality by depositing a niobium nanofilm on a plasmonic fiber taper, and observe a dielectric-loaded niobium surface-plasmon excitation for the first time, with a modal attenuation of only 3–4 dB/mm in aqueous environment and a refractive index sensitivity up to 15 μm/RIU if the analyte index exceeds 1.42. We show that the niobium nanofilm possesses bulk optical properties, is continuous, homogenous, and inert against any environmental influence, thus possessing several superior properties compared to noble metal nanofilms. These results demonstrate that ultrathin niobium nanofilms can serve as a new platform for biomedical diagnostics, superconducting photonics, ultrathin metasurfaces or new types of optoelectronic devices. PMID:26593209

  12. Cavity enhanced ultra-thin aluminum plasmonic resonator for surface enhanced infrared absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Wei, Wei; Jiang, Xiao; Nong, Jinpeng; Chen, Na; Lan, Guilian; Tang, Linlong

    2016-11-01

    Owing to the advantages of natural abundance, low cost, and amenability to manufacturing processes, aluminum has recently been recognized as a highly promising plasmonic material that attracts extensive research interest. Here, we propose a cavity-enhanced ultra-thin plasmonic resonator for surface enhanced infrared absorption spectroscopy. The considered resonator consists of a patterned ultra-thin aluminum grating strips, a dielectric spacer layer and a reflective layer. In such structure, the resonance absorption is enhanced by the cavity formed between the patterned aluminum strips and the reflective layer. It is demonstrated that the spectral features of the resonator can be tuned by adjusting the structural parameters. Furthermore, in order to achieve a deep and broad spectral line shape, the spacer layer thickness should be properly designed to realize the simultaneous resonances for the electric and the magnetic excitations. The enhanced infrared absorption characteristics can be used for infrared sensing of the environment. When the resonator is covered with a molecular layer, the resonator can be used as a surface enhanced infrared absorption substrate to enhance the absorption signal of the molecules. A high enhanced factor of 1.15×105 can be achieved when the resonance wavelength of resonator is adjusted to match the desired vibrational mode of the molecules. Such a cavity-enhanced plasmonic resonator, which is easy for practical fabrication, is expected to have potential applications for infrared sensing with high-performance.

  13. Confinement effects in ultrathin ZnO polymorph films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Sponza, Lorenzo; Goniakowski, Jacek; Noguera, Claudine

    2016-05-01

    Relying on generalized-gradient and hybrid first-principles simulations, this work provides a complete characterization of the electronic properties of ZnO ultrathin films, cut along the body-centered-tetragonal(010), cubane(100), hexagonal boron nitride(0001), zinc-blende(110), and wurtzite (10 1 ¯0 ) and (0001) orientations. The characteristics of the local densities of states are analyzed in terms of the reduction of the Madelung potential on undercoordinated atoms and surface states/resonances appearing at the top of the valence band and bottom of the conduction band. The gap width in the films is found to be larger than in the corresponding bulks, which is assigned to quantum confinement effects. The components of the high-frequency dielectric constant are determined and the absorption spectra of the films are computed. They display specific features just above the absorption threshold due to transitions from or to the surface resonances. This study provides a first understanding of finite-size effects on the electronic properties of ZnO thin films and a benchmark which is expected to foster experimental characterization of ultrathin films via spectroscopic techniques.

  14. Broadband Frequency-Selective Spoof Surface Plasmon Polaritons on Ultrathin Metallic Structure

    PubMed Central

    Yin, Jia Yuan; Ren, Jian; Zhang, Hao Chi; Pan, Bai Cao; Cui, Tie Jun

    2015-01-01

    We propose an ultrathin metallic structure to produce frequency-selective spoof surface plasmon polaritons (SPPs) in the microwave and terahertz frequencies. Designed on a thin dielectric substrate, the ultrathin metallic structure is composed of two oppositely oriented single-side corrugated strips, which are coupled to two double-side corrugated strips. The structure is fed by a traditional coplanar waveguide (CPW). To make a smooth conversion between the spatial modes in CPW and SPP modes, two transition sections are also designed. We fabricate and measure the frequency-selective spoof SPP structure in microwave frequencies. The measurement results show that the reflection coefficient is less than -10 dB with the transmission loss around 1.5 dB in the selective frequency band from 7 to 10 GHz, which are in good agreements with numerical simulations. The proposed structure can be used as an SPP filter with good performance of low loss, high transmission, and wide bandwidth in the selective frequency band. PMID:25641730

  15. Ultrathin triple-band polarization-insensitive wide-angle compact metamaterial absorber

    NASA Astrophysics Data System (ADS)

    Shang, Shuai; Yang, Shizhong; Tao, Lu; Yang, Lisheng; Cao, Hailin

    2016-07-01

    In this study, the design, realization, and characterization of an ultrathin triple-band polarization-insensitive wide-angle metamaterial absorber are reported. The metamaterial absorber comprises a periodic array of modified six-fold symmetric snowflake-shaped resonators with strip spiral line load, which is printed on a dielectric substrate backed by a metal ground plane. It is shown that the absorber exhibits three distinct near-unity absorption peaks, which are distributed across C, X, Ku bands, respectively. Owing to the six-fold symmetry, the absorber is insensitive to the polarization of the incident radiation. In addition, the absorber shows excellent absorption performance over wide oblique incident angles for both transverse electric and transverse magnetic polarizations. Simulated surface current and field distributions at the three absorption peaks are demonstrated to understand the absorption mechanism. Particularly, the absorption modes come from the fundamental and high-order dipole resonances. Furthermore, the experimental verification of the designed absorber is conducted, and the measured results are in reasonable agreement with the simulated ones. The proposed ultrathin (˜0.018λ0, λ0 corresponding to the lowest peak absorption frequency) compact (0.168λ0×0.168λ0 corresponding to the area of a unit cell) absorber enables potential applications such as stealth technology, electromagnetic interference and spectrum identification.

  16. Spoof localized surface plasmons on ultrathin textured MIM ring resonator with enhanced resonances.

    PubMed

    Zhou, Yong Jin; Xiao, Qian Xun; Yang, Bao Jia

    2015-09-30

    We numerically demonstrate that spoof localized surface plasmons (LSPs) resonant modes can be enhanced based on ultrathin corrugated metal-insulator-metal (MIM) ring resonator. Further enhancement of the LSPs modes has been achieved by incorporating an efficient and ease-of-integration exciting method. Quality factors of resonance peaks have become much larger and multipolar resonances modes can be easily observed on the textured MIM ring resonator excited by a microstrip line. Experimental results validate the high-efficiency excitation and resonance enhancements of spoof LSPs modes on the MIM ring resonator in the microwave frequencies. We have shown that the fabricated resonator is sensitive to the variation of both the dielectric constant and the thickness of surrounding materials under test. The spoof plasmonic resonator can be used as key elements to provide many important device functionalities such as optical communications, signal processing, and spectral engineering in the plasmonic integration platform.

  17. Spoof localized surface plasmons on ultrathin textured MIM ring resonator with enhanced resonances

    PubMed Central

    Zhou, Yong Jin; Xiao, Qian Xun; Jia Yang, Bao

    2015-01-01

    We numerically demonstrate that spoof localized surface plasmons (LSPs) resonant modes can be enhanced based on ultrathin corrugated metal-insulator-metal (MIM) ring resonator. Further enhancement of the LSPs modes has been achieved by incorporating an efficient and ease-of-integration exciting method. Quality factors of resonance peaks have become much larger and multipolar resonances modes can be easily observed on the textured MIM ring resonator excited by a microstrip line. Experimental results validate the high-efficiency excitation and resonance enhancements of spoof LSPs modes on the MIM ring resonator in the microwave frequencies. We have shown that the fabricated resonator is sensitive to the variation of both the dielectric constant and the thickness of surrounding materials under test. The spoof plasmonic resonator can be used as key elements to provide many important device functionalities such as optical communications, signal processing, and spectral engineering in the plasmonic integration platform. PMID:26420668

  18. Influence of Confinement and Substrate Interaction on the Crystallization Kinetics of PET Ultrathin Films

    SciTech Connect

    Capaccioli, S.; Lucchesi, M.; Prevosto, D.; Rolla, P. A.; Rotella, C.; Bertoldo, M.; Pingue, P.

    2008-07-07

    The cold crystallization kinetics of ultra-thin polymeric films (thickness: 10 nm divide 0.250 mm) of poly(ethylene terephthalate) (PET) have been investigated by dielectric spectroscopy, X-ray diffraction, infrared spectroscopy (FTIR, ATR, RAIR) and Atomic Force Microscopy (AFM) imaging. The crystallization kinetics, as well as the structural dynamics, departed form the bulk behavior in a region below 100 nm, with a stronger slowing down associated to films deposited on strongly interacting substrates. By means of AFM technique, the crystallization kinetics located at the free surface (air/polymer) were monitored: for thick samples, the kinetics at the free surface were found much faster than within the bulk. Reducing the thickness, as the free surface approached the substrate, the crystallization kinetics probed by AFM technique became slower. This effect was more relevant for strongly interacting substrates, up to prevent crystallization in very thin films.

  19. Terahertz Artificial Dielectric Lens

    NASA Astrophysics Data System (ADS)

    Mendis, Rajind; Nagai, Masaya; Wang, Yiqiu; Karl, Nicholas; Mittleman, Daniel M.

    2016-03-01

    We have designed, fabricated, and experimentally characterized a lens for the THz regime based on artificial dielectrics. These are man-made media that mimic properties of naturally occurring dielectric media, or even manifest properties that cannot generally occur in nature. For example, the well-known dielectric property, the refractive index, which usually has a value greater than unity, can have a value less than unity in an artificial dielectric. For our lens, the artificial-dielectric medium is made up of a parallel stack of 100 μm thick metal plates that form an array of parallel-plate waveguides. The convergent lens has a plano-concave geometry, in contrast to conventional dielectric lenses. Our results demonstrate that this lens is capable of focusing a 2 cm diameter beam to a spot size of 4 mm, at the design frequency of 0.17 THz. The results further demonstrate that the overall power transmission of the lens can be better than certain conventional dielectric lenses commonly used in the THz regime. Intriguingly, we also observe that under certain conditions, the lens boundary demarcated by the discontinuous plate edges actually resembles a smooth continuous surface. These results highlight the importance of this artificial-dielectric technology for the development of future THz-wave devices.

  20. Multi-technique Approach for the Evaluation of the Crystalline Phase of Ultrathin High-k Gate Oxide Films

    NASA Astrophysics Data System (ADS)

    Bersch, E.; LaRose, J. D.; Wells, I.; Consiglio, S.; Clark, R. D.; Leusink, G. J.; Matyi, R. J.; Diebold, A. C.

    2011-11-01

    In order to continue scaling metal oxide semiconductor field effect transistors (MOSFETs) with HfO2 gate oxides, efforts are being made to further improve the deposited high-k film properties. Recently, a process whereby an HfO2 film is deposited through a series of depositions and anneals (so-called DADA process) has been shown to result in films that give rise to MOS capacitors (MOSCAPs) which are electrically scaled compared to MOSCAPs with HfO2 films that only received post deposition anneals (PDA) or no anneals. We have measured as-deposited, DADA and PDA HfO2 films using four measurement techniques, all of which are non-destructive and capable of being used for in-line processing, to evaluate their crystallinity and crystalline phases. Grazing incidence in-plane X-ray diffraction was used to determine the crystalline phases of the HfO2 films. We observed the crystalline phases of these films to be process dependent. Additionally, X-ray and UV photoelectron spectroscopy were used to show the presence of crystallinity in the films. As a fourth technique, spectroscopic ellipsometry was used to determine if the crystalline phases were monoclinic. The combination of techniques was useful in that XPS and UPS were able to confirm the amorphous nature of a 30 cycle DADA film, as measured by GIIXRD, and GIIXRD was able to help us interpret the SE data as being an indication of the monoclinic phase of HfO2.

  1. Design and Fabrication of Ultrathin Plasmonic Nanostructures for Photovoltaics, Color Filtering and Biosensing

    NASA Astrophysics Data System (ADS)

    Zeng, Beibei

    Since the first report of the extraordinary optical transmission (EOT) phenomenon through periodic subwavelength hole arrays milled in optically-thick metal film, plasmonics have generated considerable interest because they enable new fundamental science and application technologies. Central to this phenomenon is the role of surface plasmon polaritons (SPPs), which are essentially electromagnetic waves trapped at the interface between a metal and a dielectric medium through their interactions with free electrons at the metal surface. The resonant interaction between the incident light and surface charge oscillations enables the concentration and manipulation of light at deep subwavelength scales, opening up exciting application opportunities ranging from subwavelength optics and optoelectronics to bio/chemical sensing. Furthermore, additional phenomena arise as the thickness of metal film decreases to be comparable to its skin depth (optically-thin), and the single-interface SPPs on the top and bottom metal surfaces combine to form two coupled SPPs, the long-range and short-range SPPs. Until now, much less work has focused on the study of surface plasmon resonances (SPRs) in ultrathin nanostructured metals. This dissertation seeks to elucidate underlying physical mechanisms of SPRs in ultrathin nanostructured metals and tailor them for practical applications. Inspired by state-of-the-art advances on plasmonics in optically-thick nanostructured metals, one- (1D) and two-dimensional (2D) ultrathin plasmonic nanostructures are exploited for particular applications in three essential areas: photovoltaics, color filters and biosensors, achieving superior performances compared with their optically-thick counterparts. More specifically, this thesis is focused on systematic investigations on: (1) plasmonic transparent electrodes for organic photovoltaics and polarization-insensitive optical absorption enhancement in the active layer; (2) plasmonic subtractive color filters

  2. Arrays of ultrathin silicon solar microcells

    DOEpatents

    Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2014-03-25

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  3. Arrays of ultrathin silicon solar microcells

    SciTech Connect

    Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

    2015-08-11

    Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

  4. Ultrathin, epitaxial cerium dioxide on silicon

    SciTech Connect

    Flege, Jan Ingo Kaemena, Björn; Höcker, Jan; Schmidt, Thomas; Falta, Jens; Bertram, Florian; Wollschläger, Joachim

    2014-03-31

    It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.

  5. Ultrathin self-assembled polyelectrolyte multilayer membranes

    NASA Astrophysics Data System (ADS)

    Tieke, B.; van Ackern, F.; Krasemann, L.; Toutianoush, A.

    The paper is concerned with ultrathin membranes prepared upon alternating layer-by-layer adsorption of cationic and anionic polyelectrolytes on a porous substructure. The formation of the polyelectrolyte multilayer membranes is characterised and the transport of gases, liquid mixtures and ions across the membranes is studied. In particular, the use of the membranes for alcohol/water separation under pervaporation conditions, and for the separation of mono- and divalent ions is described. It is demonstrated that upon a suitable choice of polyelectrolytes and substructures, and a careful optimisation of preparation and operation conditions, membranes can be tailored exhibiting an excellent separation capability.

  6. Elementary spin excitations in ultrathin itinerant magnets

    NASA Astrophysics Data System (ADS)

    Zakeri, Khalil

    2014-12-01

    Elementary spin excitations (magnons) play a fundamental role in condensed matter physics, since many phenomena e.g. magnetic ordering, electrical (as well as heat) transport properties, ultrafast magnetization processes, and most importantly electron/spin dynamics can only be understood when these quasi-particles are taken into consideration. In addition to their fundamental importance, magnons may also be used for information processing in modern spintronics. Here the concept of spin excitations in ultrathin itinerant magnets is discussed and reviewed. Starting with a historical introduction, different classes of magnons are introduced. Different theoretical treatments of spin excitations in solids are outlined. Interaction of spin-polarized electrons with a magnetic surface is discussed. It is shown that, based on the quantum mechanical conservation rules, a magnon can only be excited when a minority electron is injected into the system. While the magnon creation process is forbidden by majority electrons, the magnon annihilation process is allowed instead. These fundamental quantum mechanical selection rules, together with the strong interaction of electrons with matter, make the spin-polarized electron spectroscopies as appropriate tools to excite and probe the elementary spin excitations in low-dimensional magnets e.g ultrathin films and nanostructures. The focus is put on the experimental results obtained by spin-polarized electron energy loss spectroscopy and spin-polarized inelastic tunneling spectroscopy. The magnon dispersion relation, lifetime, group and phase velocity measured using these approaches in various ultrathin magnets are discussed in detail. The differences and similarities with respect to the bulk excitations are addressed. The role of the temperature, atomic structure, number of atomic layers, lattice strain, electronic complexes and hybridization at the interfaces are outlined. A possibility of simultaneous probing of magnons and phonons

  7. Improved Dielectric Films For Capacitors

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  8. Fabrication of Polyurethane Dielectric Actuators

    DTIC Science & Technology

    2005-01-01

    a summary of a 3 year Technology Investment Fund Project entitled “Dielectric Polymer Actuators for Active/ Passive Vibration Isolation”, which was...completed in March 2005. The purpose of this project was to investigate dielectric polymer materials for potential use in active/ passive vibration...devices and systems based on dielectric polymer actuators. Keywords: dielectric actuators, electroactive polymers , Technology Investment Fund 1

  9. Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

    NASA Astrophysics Data System (ADS)

    Sengupta, Amretashis; Sarkar, Chandan Kumar; Requejo, Felix G.

    2011-10-01

    Here, we present a comparative theoretical study on stacked (multilayer) gate dielectric MOS memory devices, having a metallic/semiconducting carbon nanotube (CNT), silicon nanowire (Si NW) and fullerene (C60) embedded nitride layer acting as a floating gate. Two types of devices, one with HfO2-SiO2 stack (stack-1) and the other with La2O3-SiO2 stack (stack-2) as the tunnel oxide were compared. We evaluated the effective barrier height, the dielectric constant and the effective electron mobility in the composite gate dielectric with the Maxwell-Garnett effective medium theory. Thereafter applying the WKB approximation, we simulated the Fowler-Nordheim (F-N) tunnelling/writing current and the direct tunnelling/leakage current in these devices. We evaluated the I-V characteristics, the charge decay and also the impact of CNT/Si NW aspect ratio and the volume fraction on the effective barrier height and the write voltage, respectively. We also simulated the write time, retention time and the erase time of these MOS devices. Based on the simulation results, it was concluded that the metallic CNT embedded stack-1 device offered the best performance in terms of higher F-N tunnelling current, lower direct tunnelling current and lesser write voltage and write time compared with the other devices. In case of direct tunnelling leakage and retention time it was found that the met CNT embedded stack-2 device showed better characteristics. For erasing, however, the C60 embedded stack-1 device showed the smallest erase time. When compared with earlier reports, it was seen that CNT, C60 and Si NW embedded devices all performed better than nanocrystalline Si embedded MOS non-volatile memories.

  10. Cast dielectric composite linear accelerator

    DOEpatents

    Sanders, David M.; Sampayan, Stephen; Slenes, Kirk; Stoller, H. M.

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  11. An ultrathin dual-band metamaterial absorber

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Duan, Junping; Zhang, Wendong; Wang, Wanjun; Zhang, Binzhen

    2016-10-01

    The design and preparation of an ultrathin dual-band metamaterial absorber whose resonant frequency located at radar wave (20 GHz-60 GHz) is presented in this paper. The absorber is composed of a 2-D periodic sandwich featured with two concentric annuluses. The influence on the absorber's performance produced by resonant cell's structure size and material parameters was numerically simulated and analyzed based on the standard full wave finite integration technology in CST. Laser ablation process was adopted to prepare the designed absorber on epoxy resin board coated with on double plane of copper with a thickness that is 1/30 and 1/50 of the resonant wavelength at a resonant frequency of 30.51 GHz and 48.15 GHz. The full width at half maximum (FWHM) reached 2.2 GHz and 2.35 GHz and the peak of the absorptance reached 99.977%. The ultrathin absorber is nearly omnidirectional for all polarizations. The test results of prepared sample testify the designed absorber's excellent absorbing performance forcefully. The absorber expands inspirations of radar stealth in military domain due to its flexible design, cost-effective and other outstanding properties.

  12. Ultrathin inorganic molecular nanowire based on polyoxometalates

    PubMed Central

    Zhang, Zhenxin; Murayama, Toru; Sadakane, Masahiro; Ariga, Hiroko; Yasuda, Nobuhiro; Sakaguchi, Norihito; Asakura, Kiyotaka; Ueda, Wataru

    2015-01-01

    The development of metal oxide-based molecular wires is important for fundamental research and potential practical applications. However, examples of these materials are rare. Here we report an all-inorganic transition metal oxide molecular wire prepared by disassembly of larger crystals. The wires are comprised of molybdenum(VI) with either tellurium(IV) or selenium(IV): {(NH4)2[XMo6O21]}n (X=tellurium(IV) or selenium(IV)). The ultrathin molecular nanowires with widths of 1.2 nm grow to micrometre-scale crystals and are characterized by single-crystal X-ray analysis, Rietveld analysis, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, thermal analysis and elemental analysis. The crystals can be disassembled into individual molecular wires through cation exchange and subsequent ultrasound treatment, as visualized by atomic force microscopy and transmission electron microscopy. The ultrathin molecular wire-based material exhibits high activity as an acid catalyst, and the band gap of the molecular wire-based crystal is tunable by heat treatment. PMID:26139011

  13. Pattern formation in dielectric barrier discharges with different dielectric materials

    SciTech Connect

    Dong, L. F.; Fan, W. L.; Wang, S.; Ji, Y. F.; Liu, Z. W.; Chen, Q.

    2011-03-15

    The influence of dielectric material on the bifurcation and spatiotemporal dynamics of the patterns in dielectric barrier discharge in argon/air at atmospheric pressure is studied. It is found that pattern bifurcation sequences are different with different dielectric materials. The spatiotemporal dynamics of the hexagonal pattern in dielectric barrier discharge depends on the dielectric material. The hexagon pattern with glass dielectric is an interleaving of two rectangular sublattices appearing at different moments. The hexagon pattern with quartz dielectric is composed of one set of hexagonal lattice discharging twice in one half cycle of the applied voltage, one is at the rising edge and the other at the falling edge. It results in that the accumulation of wall charges in individual microdischarges in a hexagon pattern with quartz dielectric is greater than that with glass dielectric, which is in agreement with the electron density measurement by Stark broadening of Ar I 696.54 nm.

  14. Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics

    NASA Astrophysics Data System (ADS)

    Bergeron, Hadallia; Sangwan, Vinod K.; McMorrow, Julian J.; Campbell, Gavin P.; Balla, Itamar; Liu, Xiaolong; Bedzyk, Michael J.; Marks, Tobin J.; Hersam, Mark C.

    2017-01-01

    Monolayer MoS2 has recently been identified as a promising material for high-performance electronics. However, monolayer MoS2 must be integrated with ultrathin high-κ gate dielectrics in order to realize practical low-power devices. In this letter, we report the chemical vapor deposition (CVD) of monolayer MoS2 directly on 20 nm thick Al2O3 grown by atomic layer deposition (ALD). The quality of the resulting MoS2 is characterized by a comprehensive set of microscopic and spectroscopic techniques. Furthermore, a low-temperature (200 °C) Al2O3 ALD process is developed that maintains dielectric integrity following the high-temperature CVD of MoS2 (800 °C). Field-effect transistors (FETs) derived from these MoS2/Al2O3 stacks show minimal hysteresis with a sub-threshold swing as low as ˜220 mV/decade, threshold voltages of ˜2 V, and current ION/IOFF ratio as high as ˜104, where IOFF is defined as the current at zero gate voltage as is customary for determining power consumption in complementary logic circuits. The system presented here concurrently optimizes multiple low-power electronics figures of merit while providing a transfer-free method of integrating monolayer MoS2 with ultrathin high-κ dielectrics, thus enabling a scalable pathway for enhancement-mode FETs for low-power applications.

  15. High-k Dielectric Nanosheets for Two-Dimensional material Electronics

    NASA Astrophysics Data System (ADS)

    Hao, Yufeng; Cui, Xu; Yin, Jun; Lee, Gwan-Hyoung; Arefe, Ghidewon; Osada, Minoru; Sasaki, Takayoshi; Hone, James

    2015-03-01

    Two-dimensional (2D) materials, such as graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides, have shown great potential in nano-electronics because of their unique and superior physical properties. Among them, hBN has been known as an alternative dielectric that is atomically flat and free of trapped charges, which drastically enhance the mobility of graphene or MoS2. However, low dielectric constant (k ~ 3.5) of hBN limits its use in transistors as gate lengths are scaled down to tens of nanometers. Here we demonstrate high performance graphene and MoS2 field effect transistors by using ultrathin Ca2NaNb4O13 nanosheet as a dielectric and mechanically stacking 2D materials. We developed a facile transfer strategy to build 2D materials devices based on the Ca2NaNb4O13 nanosheets. We measured and found that the oxide nanosheet has high dielectric strength, along with high dielectric constant at thickness of a few tens of nanometer. Therefore, multiple-stacked heterostructure of 2D materials shows high mobility at small operating voltage. This study shows possibility of high-k dielectric nanosheets for 2D electronics.

  16. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets.

    PubMed

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D; Seo, Jung-Woo T; Chen, Kan-Sheng; Marks, Tobin J; Hersam, Mark C

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10(-9) A/cm(2) at 2 MV/cm and high capacitances of 245 nF/cm(2). The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm(2) V(-1) s(-1) at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

  17. Characterization of ultrathin oxide-based multilayer SERS nanoprobes for intracellular sensing

    NASA Astrophysics Data System (ADS)

    Strobbia, Pietro; Cullum, Brian M.

    2014-05-01

    Photonic nanosensors (e.g. PEBBLES, quantum dots-based sensors, etc.) have begun to allow the study of these previously inaccessible environments. Unfortunately, many current techniques suffer from biocompatibility issues, limited ability to monitor multiple species simultaneously and/or complicated fabrication chemistries. Recently SERS immuno-nanoprobes have demonstrated the capability to overcome many of these limitations. Such intracellular SERS nanosensors require optimized substrate geometry to achieve the sensitivity necessary to detect the trace analyte concentrations present. To address this, we have developed a novel multilayered SERS substrate nanoarchitecture that is capable of enhancing SERS signals by over two orders of magnitude relative to comparable single layer substrates. These structures are fabricated using different deposition techniques (PVD, ALD, etc) in which multiple films of Ag (between 10-125 nm thick) are alternately deposited with ultrathin dielectric layers (tens of Å). This geometry allows surface plasmons from different metal layers to be generated. The resulting multilayer enhancement increases the sensitivity while also improving the robustness of the nanoprobes. In this paper, we investigate and characterize SERS immuno-nanoprobes fabricated using this multilayered geometry and discuss the effect of the dielectric spacer (Ag2O, TiO2, Ta2O5) work functions and conductive band offsets on the multilayer enhancement.

  18. Parallel-Plate Waveguide Terahertz Time Domain Spectroscopy for Ultrathin Conductive Films

    NASA Astrophysics Data System (ADS)

    Razanoelina, M.; Kinjo, R.; Takayama, K.; Kawayama, I.; Murakami, H.; Mittleman, Daniel M.; Tonouchi, M.

    2015-12-01

    Development of techniques for characterization of extremely thin films is an important challenge in terahertz (THz) science and applications. Spectroscopic measurements of materials on the nanometer scale or of atomic layer thickness (2D materials) require a sufficient terahertz wave-matter interaction length, which is challenging to achieve in conventional transmission geometry. Waveguide-based THz spectroscopy offers an alternative method to overcome this problem. In this paper, we investigate a new parallel-plate waveguide (PPWG) technique for measuring dielectric properties of ultrathin gold films, in which we mount the thin film sample at the center of the waveguide. We discuss a model of THz dielectric parameter extraction based on waveguide theory and analyze the response of thin films for both transverse magnetic (TM) and transverse electric (TE) waveguide modes. In contrast to other waveguide methods, our approach enables comparison of the material response with different electromagnetic field distributions without significantly changing the experimental setup. As a result, we demonstrate that TE modes have a better sensitivity to the properties of the thin film. For prototype test samples, optical parameters extracted using our method are in good agreement with literature values.

  19. Ultrathin phase-change coatings on metals for electrothermally tunable colors

    NASA Astrophysics Data System (ADS)

    Bakan, Gokhan; Ayas, Sencer; Saidzoda, Tohir; Celebi, Kemal; Dana, Aykutlu

    2016-08-01

    Metal surfaces coated with ultrathin lossy dielectrics enable color generation through strong interferences in the visible spectrum. Using a phase-change thin film as the coating layer offers tuning the generated color by crystallization or re-amorphization. Here, we study the optical response of surfaces consisting of thin (5-40 nm) phase-changing Ge2Sb2Te5 (GST) films on metal, primarily Al, layers. A color scale ranging from yellow to red to blue that is obtained using different thicknesses of as-deposited amorphous GST layers turns dim gray upon annealing-induced crystallization of the GST. Moreover, when a relatively thick (>100 nm) and lossless dielectric film is introduced between the GST and Al layers, optical cavity modes are observed, offering a rich color gamut at the expense of the angle independent optical response. Finally, a color pixel structure is proposed for ultrahigh resolution (pixel size: 5 × 5 μm2), non-volatile displays, where the metal layer acting like a mirror is used as a heater element. The electrothermal simulations of such a pixel structure suggest that crystallization and re-amorphization of the GST layer using electrical pulses are possible for electrothermal color tuning.

  20. Reversible optical switching of highly confined phonon-polaritons with an ultrathin phase-change material

    NASA Astrophysics Data System (ADS)

    Li, Peining; Yang, Xiaosheng; Maß, Tobias W. W.; Hanss, Julian; Lewin, Martin; Michel, Ann-Katrin U.; Wuttig, Matthias; Taubner, Thomas

    2016-08-01

    Surface phonon-polaritons (SPhPs), collective excitations of photons coupled with phonons in polar crystals, enable strong light-matter interaction and numerous infrared nanophotonic applications. However, as the lattice vibrations are determined by the crystal structure, the dynamical control of SPhPs remains challenging. Here, we realize the all-optical, non-volatile, and reversible switching of SPhPs by controlling the structural phase of a phase-change material (PCM) employed as a switchable dielectric environment. We experimentally demonstrate optical switching of an ultrathin PCM film (down to 7 nm, <λ/1,200) with single laser pulses and detect ultra-confined SPhPs (polariton wavevector kp > 70k0, k0 = 2π/λ) in quartz. Our proof of concept allows the preparation of all-dielectric, rewritable SPhP resonators without the need for complex fabrication methods. With optimized materials and parallelized optical addressing we foresee application potential for switchable infrared nanophotonic elements, for example, imaging elements such as superlenses and hyperlenses, as well as reconfigurable metasurfaces and sensors.

  1. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2001-10-09

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  2. Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2005-02-15

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  3. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2003-02-11

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  4. Ultrathin optical panel and a method of making an ultrathin optical panel

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2002-01-01

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated With a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  5. Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

    DOEpatents

    Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

    2005-05-17

    An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

  6. Magnetization dynamics in ultrathin magnetic films

    NASA Astrophysics Data System (ADS)

    Mosendz, Oleksandr

    Ultrathin magnetic multilayer structures are prepared by Molecular Beam Epitaxy (MBE) on GaAs(001) substrates. Growth was monitored and characterized by Reflection High Energy Electron Diffraction (RHEED), Auger Electron Spectroscopy (AES), X-Ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM). The Fe/GaAs interface and its influence on the static magnetic properties in magnetic ultrathin films was studied by means of Ferromagnetic Resonance (FMR) and Mossbauer spectroscopy. These studies were performed using the high quality single crystalline Fe(001) films. It will be shown that in ultrathin magnetic films the magnetic properties are governed by the interface and bulk contributions. The static and dynamic magnetic properties of the Fe single and double layers were studied by FMR and Time Resolved Magneto-optic Kerr Effect (TRMOKE) in a wide range of microwave frequencies. Magnetic damping was studied in the Au/Fe/GaAs(001) structures as a function of thickness of the Fe and the capping Au layer, respectively. Spin currents generated by spin pump/spin sink effects were extensively investigated in magnetic Au/Fe/Au/Fe/GaAs(001) double layers. Pure spin current driven dynamics in these magnetic double layers was studied using the TRMOKE technique. Spin accumulation and spin diffusion model was applied to explain the spin momentum propagation in the Au spacer. The spin diffusion length in Au was found of 34 nm at room temperature. The spin pump/spin sink theory was tested for antiparallel driving of the two Fe layers in Au/Fe/Au/Fe/GaAs(001). This condition was achieved via patterning the sample into a coplanar waveguide. Results are in good agreement with simulations based on the spin pump/spin sink model together with diffusive transport of the accumulated spin momentum across the non-magnetic spacer. The Au/Fe/Au/Fe/GaAs(001) structure was used to study the spin pump/spin sink effect in a non-collinear orientation of the magnetic moments

  7. PREFACE: Dielectrics 2011

    NASA Astrophysics Data System (ADS)

    Vaughan, Alun; Lewin, Paul

    2011-08-01

    In 2011, the biennial meeting of the Dielectrics Group of the IOP, Dielectrics 2011, was held for the first time in a number of years at the University of Kent at Canterbury. This conference represents the most recent in a long standing series that can trace its roots back to a two-day meeting that was held in the spring of 1968 at Gregynog Hall of the University of Wales. In the intervening 43 years, this series of meetings has addressed many topics, including dielectric relaxation, high field phenomena, biomaterials and even molecular electronics, and has been held at many different venues within the UK. However, in the early 1990s, a regular venue was established at the University of Kent at Canterbury and, it this respect, this year's conference can be considered as "Dielectrics coming home". The format for the 2011 meeting followed that established at Dielectrics 2009, in breaking away from the concept of a strongly themed event that held sway during the mid 2000s. Rather, we again adopted a general, inclusive approach that was based upon four broad technical areas: Theme 1: Insulation/HV Materials Theme 2: Dielectric Spectroscopy Theme 3: Modelling Dielectric Response Theme 4: Functional Materials The result was a highly successful conference that attracted more than 60 delegates from eight countries, giving the event a truly international flavour, and which included both regular and new attendees; it was particularly pleasing to see the number of early career researchers at the meeting. Consequently, the organizing committee would like to thank our colleagues at the IOP, the invited speakers, our sponsors and all the delegates for making the event such a success. Finally, we look forward to convening again in 2013, when we will be returning to The University of Reading. Prof Alun Vaughan and Prof Paul Lewin, Editors

  8. A single dielectric nanolaser

    NASA Astrophysics Data System (ADS)

    Huang, Tsung-Yu; Yen, Ta-Jen

    2016-09-01

    To conquer Ohmic losses from metal and enhance pump absorption efficiency of a nanolaser based on surface plasmon polariton, we theoretically calculate the first magnetic and electric scattering coefficient of a dielectric sphere under a plane wave excitation with a dielectric constant of around 12. From this calculation, we could retrieve both negative effective permittivity and permeability of the sphere simultaneously at frequencies around 153 THz in the aids of Lewin's theory and the power distribution clearly demonstrate the expected negative Goos-Hänchen effect, which usually occurred in a negative refractive waveguide, thus creating two energy vortices to trap incident energy and then promoting the pump absorption efficiency. Meanwhile, a magnetic lasing mode at 167.3 THz is demonstrated and reveals a magnetic dipole resonance mode and a circulating energy flow within the dielectric sphere, providing a possible stopped light feedback mechanism to enable the all-dielectric nanolaser. More importantly, the corresponding mode volume is reduced to 0.01λ3 and a gain threshold of 5.1×103 is obtained. To validate our design of all-dielectric nanolaser, we employ finite-difference-time-domain simulation software to examine the behavior of the nanolaser. From simulation, we could obtain a pinned-down population inversion of 0.001 and a lasing peak at around 166.5 THz, which is very consistent with the prediction of Mie theory. Finally, according to Mie theory, we can regard the all-dielectric nanolaser as the excitation of material polariton and thus could make an analogue between lasing modes of the dielectric and metallic nanoparticles.

  9. Ultra-thin microporous/hybrid materials

    DOEpatents

    Jiang, Ying-Bing [Albuquerque, NM; Cecchi, Joseph L [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM

    2012-05-29

    Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

  10. Electric field effect in ultrathin black phosphorus

    SciTech Connect

    Koenig, Steven P.; Schmidt, Hennrik; Doganov, Rostislav A.; Castro Neto, A. H.; Özyilmaz, Barbaros

    2014-03-10

    Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO{sub 2} and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm{sup 2}/Vs and drain current modulation of over 10{sup 3}. At low temperatures, the on-off ratio exceeds 10{sup 5}, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation.

  11. Ultrathin nonlinear metasurface for optical image encoding.

    PubMed

    Walter, Felicitas; Li, Guixin; Meier, Cedrik; Zhang, Shuang; Zentgraf, Thomas

    2017-04-14

    Security of optical information is of great importance in modern society. Many cryptography techniques based on classical and quantum optics have been widely explored in the linear optical regime. Nonlinear optical encryption, in which encoding and decoding involve nonlinear frequency conversions, represents a new strategy for securing optical information. Here, we demonstrate that an ultrathin nonlinear photonic metasurface, consisting of meta-atoms with three-fold rotational symmetry, can be used to hide optical images under illumination with a fundamental wave. However, the hidden image can be read out from second harmonic generation (SHG) waves. This is achieved by controlling the destructive and constructive interferences of SHG waves from two neighboring meta-atoms. In addition, we apply this concept to obtain grey-scale SHG imaging. Nonlinear metasurfaces based on space variant optical interference open new avenues for multi-level image encryption, anti-counterfeiting and background free image reconstruction.

  12. Self-Organized Ultrathin Oxide Nanocrystals

    SciTech Connect

    Huo, Ziyang; Tsung, Chia-kuang; Huang, Wenyu; Fardy, Melissa; Yan, Ruoxue; Li, Yadong; Yang, Piedong; Zhang, Xiaofeng

    2009-01-08

    Sub-2-nm (down to one-unit cell) uniform oxide nanocrystals and highly ordered superstructures were obtained in one step using oleylamine and oleic acid as capping and structure directing agents. The cooperative nature of the nanocrystal growth and assembly resulted in mesoscopic one-dimensional ribbon-like superstructures made of these ultrathin nanocrystals. The process reported here is general and can be readily extended to the production of many other transition metal (TiO2, ZnO, Nb2O5) and rare earth oxide (Eu2O3, Sm2O3, Er2O3, Y2O3, Tb2O3, and Yb2O3) systems.

  13. Electric field effect in ultrathin black phosphorus

    NASA Astrophysics Data System (ADS)

    Koenig, Steven P.; Doganov, Rostislav A.; Schmidt, Hennrik; Castro Neto, A. H.; Özyilmaz, Barbaros

    2014-03-01

    Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices on Si/SiO2 and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm2/Vs and drain current modulation of over 103. At low temperatures, the on-off ratio exceeds 105, and the device exhibits both electron and hole conduction. Using atomic force microscopy, we observe significant surface roughening of thin black phosphorus crystals over the course of 1 h after exfoliation.

  14. Experimental study on the dielectric properties of polyacrylate dielectric elastomer

    NASA Astrophysics Data System (ADS)

    Qiang, Junhua; Chen, Hualing; Li, Bo

    2012-02-01

    The dielectric constant of elastomeric dielectric material is an essential physical parameter, whose value may affect the electromechanical deformation of a dielectric elastomer actuator. Since the dielectric constant is influenced by several external factors as reported before, and no certain value has been confirmed to our knowledge, in the present paper, on the basis of systematical comparison of recent past literature, we conducted extensive works on the measurement of dielectric properties of VHB films, involving five influencing factors: prestretch (both equal and unequal biaxial), electrical frequency, electrode material, stress relaxation time and temperature. Experimental results directly show that the dielectric response changes according to these factors, based on which we investigate the significance of each factor, especially the interaction of two external conditions on the dielectric constant of deformable dielectric, by presenting a physical picture of the mechanism of polarization.

  15. Reducing Electroosmotic Flow Enables DNA Separations in Ultrathin Channels.

    DTIC Science & Technology

    1998-08-01

    systems with on-column detection. B. Schematic diagram of EOF in traditional CE systems . ...23 Figure 2-2: Schematic diagram of EOF in CE systems ...of the CE/ultrathin channel system for characterization studies. B. Schematic diagram of the CE/ultrathin channel system for separation studies 49...Development of an Integrated DNA Separation System ; Hietpas, P. B., Ed.; The Pennsylvannia State University: University Park, PA, 1997, pp 1-168. 19

  16. Nanocavity enhancement for ultra-thin film optical absorber.

    PubMed

    Song, Haomin; Guo, Luqing; Liu, Zhejun; Liu, Kai; Zeng, Xie; Ji, Dengxin; Zhang, Nan; Hu, Haifeng; Jiang, Suhua; Gan, Qiaoqiang

    2014-05-01

    A fundamental strategy is developed to enhance the light-matter interaction of ultra-thin films based on a strong interference effect in planar nanocavities, and overcome the limitation between the optical absorption and film thickness of energy harvesting/conversion materials. This principle is quite general and is applied to explore the spectrally tunable absorption enhancement of various ultra-thin absorptive materials including 2D atomic monolayers.

  17. Fracture and fatigue of ultrathin nanoporous polymer films

    NASA Astrophysics Data System (ADS)

    Kearney, Andrew V.

    Nanoporous polymer layers are being considered for a range of emerging nanoscale applications, from low permittivity materials for interlayer dielectrics in microelectronics and anti-reflective coatings in optical technologies, to biosensors and size-selective membranes for biological applications. Polymer thin films have inherently low elastic modulus, strength and hardness, but exhibit fracture properties that are higher than those reported for glass, ceramic, and even some metal layers. However, constraint of a ductile polymer between two elastic layers is expected to affect the local plasticity ahead of a crack tip and its contribution to the film adhesion with films below a micron in thickness. Additionally, nanoporosity would be expected to have a deleterious effect on mechanical properties, producing materials and layers that are structurally weaker than fully dense versions they replace. Therefore, the integration of these nanoporous polymer layer at nanometer thicknesses would present significantly processing and mechanical reliability challenges. In this dissertation, surprising evidence is presented that nanoporous polymer films exhibit increasing fracture energy with increasing porosity. Such behavior is in stark contrast to a wide range of reported behavior for porous solids. A ductile nano-void growth and coalescence fracture mechanics-based model is presented to rationalize the increase in fracture toughness of the voided polymer film. The model is shown to explain the behavior in terms of a specific scaling of the size of the pores with pore volume fraction. It is demonstrated that the pore size must increase with close to a linear dependence on the volume fraction in order to increase rather than decrease the fracture energy. Independent characterization of the pore size as a function of volume fraction is shown to confirm predictions made by the model. The fracture behavior of these constrained polymer films are also examined with film thickness

  18. Dielectric Constant of Suspensions

    NASA Astrophysics Data System (ADS)

    Mendelson, Kenneth S.; Ackmann, James J.

    1997-03-01

    We have used a finite element method to calculate the dielectric constant of a cubic array of spheres. Extensive calculations support preliminary conclusions reported previously (K. Mendelson and J. Ackmann, Bull. Am. Phys. Soc. 41), 657 (1996).. At frequencies below 100 kHz the real part of the dielectric constant (ɛ') shows oscillations as a function of the volume fraction of suspension. These oscillations disappear at low conductivities of the suspending fluid. Measurements of the dielectric constant (J. Ackmann, et al., Ann. Biomed. Eng. 24), 58 (1996). (H. Fricke and H. Curtis, J. Phys. Chem. 41), 729 (1937). are not sufficiently sensitive to show oscillations but appear to be consistent with the theoretical results.

  19. Superdirective dielectric nanoantennas

    NASA Astrophysics Data System (ADS)

    Krasnok, Alexander E.; Simovski, Constantin R.; Belov, Pavel A.; Kivshar, Yuri S.

    2014-06-01

    We introduce the novel concept of superdirective nanoantennas based on the excitation of higher-order magnetic multipole moments in subwavelength dielectric nanoparticles. Our superdirective nanoantenna is a small Si nanosphere containing a notch, and is excited by a dipole located within the notch. In addition to extraordinary directivity, this nanoantenna demonstrates efficient radiation steering at the nanoscale, resulting from the subwavelength sensitivity of the beam radiation direction to variation of the source position inside the notch. We compare our dielectric nanoantenna with a plasmonic nanoantenna of similar geometry, and reveal that the nanoantenna's high directivity in the regime of transmission is not associated with strong localization of near fields in the regime of reception. Likewise, the absence of hot spots inside the nanoantenna leads to low dissipation in the radiation regime, so that our dielectric nanoantenna has significantly smaller losses and high radiation efficiency of up to 70%.

  20. Dielectric assist accelerating structure

    NASA Astrophysics Data System (ADS)

    Satoh, D.; Yoshida, M.; Hayashizaki, N.

    2016-01-01

    A higher-order TM02 n mode accelerating structure is proposed based on a novel concept of dielectric loaded rf cavities. This accelerating structure consists of ultralow-loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure. Unlike conventional dielectric loaded accelerating structures, most of the rf power is stored in the vacuum space near the beam axis, leading to a significant reduction of the wall loss, much lower than that of conventional normal-conducting linac structures. This allows us to realize an extremely high quality factor and a very high shunt impedance at room temperature. A simulation of a 5 cell prototype design with an existing alumina ceramic indicates an unloaded quality factor of the accelerating mode over 120 000 and a shunt impedance exceeding 650 M Ω /m at room temperature.

  1. PREFACE: Dielectrics 2013

    NASA Astrophysics Data System (ADS)

    Hadjiloucas, Sillas; Blackburn, John

    2013-11-01

    This volume records the 42nd Dielectrics Group Proceedings of the Dielectrics Conference that took place at the University of Reading UK from 10-12 April 2013. The meeting is part of the biennial Dielectrics series of the Dielectrics Group, and formerly Dielectrics Society, and is organised by the Institute of Physics. The conference proceedings showcase some of the diversity and activity of the Dielectrics community worldwide, and bring together contributions from academics and industrial researchers with a diverse background and experiences from the Physics, Chemistry and Engineering communities. It is interesting to note some continuing themes such as Insulation/HV Materials, Dielectric Spectroscopy, Dielectric Measurement Techniques and Ferroelectric materials have a growing importance across a range of technologically important areas from the Energy sector to Materials research, Semiconductor and Electronics industries, and Metrology. We would like to thank all of our colleagues and friends in the Dielectrics community who have supported this event by contributing manuscripts and participating in the event. The conference has provided excellent networking opportunities for all delegates. Our thanks go also to our theme chairs: Dr Stephen Dodd (University of Leicester) on Insulation/HV Materials, Professor Darryl Almond (University of Bath) on Dielectric Spectroscopy, Dr John Blackburn (NPL) on Dielectric Measurement Techniques and Professor Anthony R West (University of Sheffield) on Ferroelectric Materials. We would also like to thank the other members of the Technical Programme Committee for their support, and refereeing the submitted manuscripts. Our community would also like to wish a full recovery to our plenary speaker Prof John Fothergill (City University London) who was unexpectedly unable to give his talk as well as thank Professor Alun Vaughan for stepping in and giving an excellent plenary lecture in his place at such very short notice. We are also

  2. Controlling birefringence in dielectrics

    NASA Astrophysics Data System (ADS)

    Danner, Aaron J.; Tyc, Tomáš; Leonhardt, Ulf

    2011-06-01

    Birefringence, from the very essence of the word itself, refers to the splitting of light rays into two parts. In natural birefringent materials, this splitting is a beautiful phenomenon, resulting in the perception of a double image. In optical metamaterials, birefringence is often an unwanted side effect of forcing a device designed through transformation optics to operate in dielectrics. One polarization is usually implemented in dielectrics, and the other is sacrificed. Here we show, with techniques beyond transformation optics, that this need not be the case, that both polarizations can be controlled to perform useful tasks in dielectrics, and that rays, at all incident angles, can even follow different trajectories through a device and emerge together as if the birefringence did not exist at all. A number of examples are shown, including a combination Maxwell fisheye/Luneburg lens that performs a useful task and is achievable with current fabrication materials.

  3. Thermally switchable dielectrics

    DOEpatents

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  4. A dielectric affinity microbiosensor

    NASA Astrophysics Data System (ADS)

    Huang, Xian; Li, Siqi; Schultz, Jerome S.; Wang, Qian; Lin, Qiao

    2010-01-01

    We present an affinity biosensing approach that exploits changes in dielectric properties of a polymer due to its specific, reversible binding with an analyte. The approach is demonstrated using a microsensor comprising a pair of thin-film capacitive electrodes sandwiching a solution of poly(acrylamide-ran-3-acrylamidophenylboronic acid), a synthetic polymer with specific affinity to glucose. Binding with glucose induces changes in the permittivity of the polymer, which can be measured capacitively for specific glucose detection, as confirmed by experimental results at physiologically relevant concentrations. The dielectric affinity biosensing approach holds the potential for practical applications such as long-term continuous glucose monitoring.

  5. Multilayer dielectric diffraction gratings

    DOEpatents

    Perry, Michael D.; Britten, Jerald A.; Nguyen, Hoang T.; Boyd, Robert; Shore, Bruce W.

    1999-01-01

    The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described.

  6. Multilayer dielectric diffraction gratings

    DOEpatents

    Perry, M.D.; Britten, J.A.; Nguyen, H.T.; Boyd, R.; Shore, B.W.

    1999-05-25

    The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described. 7 figs.

  7. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

    NASA Astrophysics Data System (ADS)

    Borrel, Julien; Hutin, Louis; Kava, Donato; Gassilloud, Remy; Bernier, Nicolas; Morand, Yves; Nemouchi, Fabrice; Gregoire, Magali; Dubois, Emmanuel; Vinet, Maud

    2017-04-01

    In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation.

  8. Nanoscale Buckling of Ultrathin Low-k Dielectric Lines during Hard-Mask Patterning.

    PubMed

    Stan, Gheorghe; Ciobanu, Cristian V; Levin, Igor; Yoo, Hui J; Myers, Alan; Singh, Kanwal; Jezewski, Christopher; Miner, Barbara; King, Sean W

    2015-06-10

    Commonly known in macroscale mechanics, buckling phenomena are now also encountered in the nanoscale world as revealed in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and elastic moduli measurements, as well as a thorough understanding of the relationships between stresses in the system and the ensuing morphologies. Here, we analyze quantitatively the buckling mechanics of organosilicate fins that are capped with hard masks in the process of lithographic formation of deep interconnects. We propose an analytical model that quantitatively describes the morphologies of the buckled fins generated by residual stresses in the hard mask. Using measurements of mechanical properties and geometric characteristics, we have verified the predictions of the analytical model for structures with various degrees of buckling, thus putting forth a framework for guiding the design of future nanoscale interconnect architectures.

  9. MoS{sub 2} functionalization for ultra-thin atomic layer deposited dielectrics

    SciTech Connect

    Azcatl, Angelica; McDonnell, Stephen; Santosh, K.C.; Peng, Xin; Dong, Hong; Qin, Xiaoye; Addou, Rafik; Lu, Ning; Kim, Moon J.; Cho, Kyeongjae; Wallace, Robert M.; Mordi, Greg I.; Kim, Jiyoung

    2014-03-17

    The effect of room temperature ultraviolet-ozone (UV-O{sub 3}) exposure of MoS{sub 2} on the uniformity of subsequent atomic layer deposition of Al{sub 2}O{sub 3} is investigated. It is found that a UV-O{sub 3} pre-treatment removes adsorbed carbon contamination from the MoS{sub 2} surface and also functionalizes the MoS{sub 2} surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS{sub 2} surface and provides nucleation sites for atomic layer deposition of Al{sub 2}O{sub 3}. The enhanced nucleation is found to be dependent on the thin film deposition temperature.

  10. Synthesis of Freestanding HfO2 Nanostructures

    DTIC Science & Technology

    2011-04-05

    Perebeinos V: Carbon-based electronics. Nature Nanotechnology 2007, 2:605-615. 8. Joensen P, Frindt RF, Morrison SR: Single-layer MoS2 . Mater Res Bull...standing single crystal silicon nanoribbons . J Am Chem Soc 2001, 123:11095-11096. 12. Hinode H, Ohtani T, Wakihara M: Homogeneity range and some

  11. Optimal Super Dielectric Material

    DTIC Science & Technology

    2015-09-01

    electrically insulating materials filled to the point of incipient wetness (paste consistency) with liquids containing dissolved ions. This work...109. This strongly supports the fundamental hypothesis of SDM: In the presence of an electric field any electrically insulating, porous material...ABSTRACT The results of this study establish that powder-based super dielectric materials (SDM) are a large family of porous electrically

  12. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.

    PubMed

    Jandhyala, Srikar; Mordi, Greg; Lee, Bongki; Lee, Geunsik; Floresca, Carlo; Cha, Pil-Ryung; Ahn, Jinho; Wallace, Robert M; Chabal, Yves J; Kim, Moon J; Colombo, Luigi; Cho, Kyeongjae; Kim, Jiyoung

    2012-03-27

    Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

  13. Electrical and reliability characteristics of Mn-doped nano BaTiO3-based ceramics for ultrathin multilayer ceramic capacitor application

    NASA Astrophysics Data System (ADS)

    Gong, Huiling; Wang, Xiaohui; Zhang, Shaopeng; Tian, Zhibin; Li, Longtu

    2012-12-01

    Nano BaTiO3-based dielectric ceramics were prepared by chemical coating approach, which are promising for ultrathin multilayer ceramic capacitor (MLCC) applications. The doping effects of Mn element on the microstructures and dielectric properties of the ceramics were investigated. The degradation test and impedance spectroscopy were employed to study the resistance degradation and the conduction mechanism of Mn-doped nano-BaTiO3 ceramic samples. It has been found that the reliability characteristics greatly depended on the Mn-doped content. Moreover, the BaTiO3 ceramic with grain size in nanoscale is more sensitive to the Mn-doped content than that in sub-micron scale. The addition of 0.3 mol. % Mn is beneficial for improving the reliability of the nano BaTiO3-based ceramics, which is an important parameter for MLCC applications. However, further increasing the addition amount will deteriorate the performance of the ceramic samples.

  14. Model of dissipative dielectric elastomers

    NASA Astrophysics Data System (ADS)

    Chiang Foo, Choon; Cai, Shengqiang; Jin Adrian Koh, Soo; Bauer, Siegfried; Suo, Zhigang

    2012-02-01

    The dynamic performance of dielectric elastomer transducers and their capability of electromechanical energy conversion are affected by dissipative processes, such as viscoelasticity, dielectric relaxation, and current leakage. This paper describes a method to construct a model of dissipative dielectric elastomers on the basis of nonequilibrium thermodynamics. We characterize the state of the dielectric elastomer with kinematic variables through which external loads do work, and internal variables that measure the progress of the dissipative processes. The method is illustrated with examples motivated by existing experiments of polyacrylate very-high-bond dielectric elastomers. This model predicts the dynamic response of the dielectric elastomer and the leakage current behavior. We show that current leakage can be significant under large deformation and for long durations. Furthermore, current leakage can result in significant hysteresis for dielectric elastomers under cyclic voltage.

  15. Interfacial diffusion behavior in Ni-BaTiO 3 MLCCs with ultra-thin active layers

    NASA Astrophysics Data System (ADS)

    Gong, Huiling; Wang, Xiaohui; Tian, Zhibin; Zhang, Hui; Li, Longtu

    2014-03-01

    The interfacial structure and diffusion behavior between the dielectric layers (BaTiO3) and internal electrode layers (Ni) in X5R-type multilayer ceramic capacitors (MLCCs, from -55°C to 85°C, at a temperature capacitance coefficient within ±15%) with ultra-thin active layers ( T = 1-3 µm) have been investigated by several microstructural techniques (SEM/TEM/HRTEM) with energy-dispersive x-ray spectroscopy (EDS). In the MLCC samples with different active layer thicknesses (1-3 µm), weak interfacial diffusion was observed between BaTiO3 and Ni. It was also found that the diffusion capability of Ni into the BaTiO3 layer was stronger than that of BaTiO3 to the Ni electrode, which indicated that the diffusion of Ni was the dominant factor for the interfacial diffusion behavior in the ultra-thin layered MLCCs. The mechanism of Ni diffusion is discussed in this study as well.

  16. Effects of the dielectric properties of the ceramic-solvent interface on the binding of proteins to oxide ceramics: a non-local electrostatic approach

    NASA Astrophysics Data System (ADS)

    Rubinstein, Alexander I.; Sabirianov, Renat F.; Namavar, Fereydoon

    2016-10-01

    The rapid development of nanoscience and nanotechnology has raised many fundamental questions that significantly impede progress in these fields. In particular, understanding the physicochemical processes at the interface in aqueous solvents requires the development and application of efficient and accurate methods. In the present work we evaluate the electrostatic contribution to the energy of model protein-ceramic complex formation in an aqueous solvent. We apply a non-local (NL) electrostatic approach that accounts for the effects of the short-range structure of the solvent on the electrostatic interactions of the interfacial systems. In this approach the aqueous solvent is considered as a non-ionic liquid, with the rigid and strongly correlated dipoles of the water molecules. We have found that an ordered interfacial aqueous solvent layer at the protein- and ceramic-solvent interfaces reduces the charging energy of both the ceramic and the protein in the solvent, and significantly increases the electrostatic contribution to their association into a complex. This contribution in the presented NL approach was found to be significantly shifted with respect to the classical model at any dielectric constant value of the ceramics. This implies a significant increase of the adsorption energy in the protein-ceramic complex formation for any ceramic material. We show that for several biocompatible ceramics (for example HfO2, ZrO2, and Ta2O5) the above effect predicts electrostatically induced protein-ceramic complex formation. However, in the framework of the classical continuum electrostatic model (the aqueous solvent as a uniform dielectric medium with a high dielectric constant ˜80) the above ceramics cannot be considered as suitable for electrostatically induced complex formation. Our results also show that the protein-ceramic electrostatic interactions can be strong enough to compensate for the unfavorable desolvation effect in the process of protein

  17. Application of Infrared Nanooptics to Ultrathin Materials

    NASA Astrophysics Data System (ADS)

    Andreev, Gregory

    My thesis describes the study of nanoscale physics using infrared spectroscopy and nanoscopy methods. The first phase of my research was the development of new methods for tuning metamaterials, which possess custom tailored optical properties not easily found in nature. Working together with Tom Driscoll, I co-invented a simple yet effective method for tuning the magnetic permeability of a Split Ring Resonator based metamaterial. This is the topic of Chapter 1. My subsequent research dealt with near field optics, in particular the application of the infrared imaging method of scattering Scanning Nearfield Optical Microscopy to ultrathin materials such as single layer Graphene and 2nm thin SiO2 layers on Silicon. On both of these materials we demonstrated incredible sensitivity to ≤ 10x10x1nm3 volumes (Chapter 3). Thanks to the incredibly large momenta of the evanescent light utilized in sSNOM, we also discovered a rich array of previously unobserved physics in Graphene. In particular, we were able to observe the resonance enhancement of the SiO2 phonon by the presence of plasmon oscillations in Graphene (Chapter 2). Lastly, a large part of my thesis work also involved building the first cryogenic sSNOM with which we were able to directly image the metal to insulator transition in the correlated oxide: V2O3, shown in the last chapter.

  18. Optimized actuators for ultrathin deformable primary mirrors.

    PubMed

    Laslandes, Marie; Patterson, Keith; Pellegrino, Sergio

    2015-05-20

    A novel design and selection scheme for surface-parallel actuators for ultrathin, lightweight mirrors is presented. The actuation system consists of electrodes printed on a continuous layer of piezoelectric material bonded to an optical-quality substrate. The electrodes provide almost full coverage of the piezoelectric layer, in order to maximize the amount of active material that is available for actuation, and their shape is optimized to maximize the correctability and stroke of the mirror for a chosen number of independent actuators and for a dominant imperfection mode. The starting point for the design of the electrodes is the observation that the correction of a figure error that has at least two planes of mirror symmetry is optimally done with twin actuators that have the same optimized shape but are rotated through a suitable angle. Additional sets of optimized twin actuators are defined by considering the intersection between the twin actuators, and hence an arbitrarily fine actuation pattern can be generated. It is shown that this approach leads to actuator systems with better performance than simple, geometrically based actuators. Several actuator patterns to correct third-order astigmatism aberrations are presented, and an experimental demonstration of a 41-actuator mirror is also presented.

  19. Ultrathin hydrogel films for rapid optical biosensing.

    PubMed

    Zhang, Xi; Guan, Ying; Zhang, Yongjun

    2012-01-09

    Novel biosensors have been designed by reporting an analyte-induced (de)swelling of a stimuli-responsive hydrogel (usually in a form of thin film) with a suitable optical transducer. These simple, inexpensive hydrogel biosensors are highly desirable, however, their practical applications have been hindered, largely because of their slow response. Here we show that quick response hydrogel sensors can be designed from ultrathin hydrogel films. By the adoption of layer-by-layer assembly, a simple but versatile approach, glucose-sensitive hydrogel films with thickness on submicrometer or micrometer scale, which is 2 orders of magnitude thinner than films used in ordinary hydrogel sensors, can be facilely fabricated. The hydrogel films can not only respond to the variation in glucose concentration, but also report the event via the shift of Fabry-Perot fringes using the thin film itself as Fabry-Perot cavity. The response is linear and reversible. More importantly, the response is quite fast, making it possible to be used for continuous glucose monitoring.

  20. Versatile ultrathin nanoporous silicon nitride membranes

    SciTech Connect

    Vlassiouk, Ivan V

    2009-01-01

    Single- and multiple-nanopore membranes are both highly interesting for biosensing and separation processes, as well as their ability to mimic biological membranes. The density of pores, their shape, and their surface chemistry are the key factors that determine membrane transport and separation capabilities. Here, we report silicon nitride (SiN) membranes with fully controlled porosity, pore geometry, and pore surface chemistry. An ultrathin freestanding SiN platform is described with conical or double-conical nanopores of diameters as small as several nanometers, prepared by the track-etching technique. This technique allows the membrane porosity to be tuned from one to billions of pores per square centimeter. We demonstrate the separation capabilities of these membranes by discrimination of dye and protein molecules based on their charge and size. This separation process is based on an electrostatic mechanism and operates in physiological electrolyte conditions. As we have also shown, the separation capabilities can be tuned by chemically modifying the pore walls. Compared with typical membranes with cylindrical pores, the conical and double-conical pores reported here allow for higher fluxes, a critical advantage in separation applications. In addition, the conical pore shape results in a shorter effective length, which gives advantages for single biomolecule detection applications such as nanopore-based DNA analysis.

  1. Inducing electric polarization in ultrathin insulating layers

    NASA Astrophysics Data System (ADS)

    Martinez-Castro, Jose; Piantek, Marten; Persson, Mats; Serrate, David; Hirjibehedin, Cyrus F.

    Studies of ultrathin polar oxide films have attracted the interest of researchers for a long time due to their different properties compared to bulk materials. However they present several challenges such as the difficulty in the stabilization of the polar surfaces and the limited success in tailoring their properties. Moreover, recently developed Van der Waals materials have shown that the stacking of 2D-layers trigger new collective states thanks to the interaction between layers. Similarly, interface phenomena emerge in polar oxides, like induced ferroelectricity. This represents a promising way for the creation of new materials with customized properties that differ from those of the isolated layers. Here we present a new approach for the fabrication and study of atomically thin insulating films. We show that the properties of insulating polar layers of sodium chloride (NaCl) can be engineered when they are placed on top of a charge modulated template of copper nitride (Cu2N). STM studies carried out in ultra-high vacuum and at low temperatures over NaCl/Cu2N/Cu(001) show that we are able to build up and stabilize interfaces of polar surface at the limit of one atomic layer showing new properties not present before at the atomic scale.

  2. Antenna with Dielectric Having Geometric Patterns

    NASA Technical Reports Server (NTRS)

    Dudley, Kenneth L. (Inventor); Elliott, Holly A. (Inventor); Cravey, Robin L. (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Watson, Kent A. (Inventor); Smith, Jr., Joseph G. (Inventor)

    2013-01-01

    An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

  3. A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

    NASA Astrophysics Data System (ADS)

    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.

    2016-03-01

    The charge coupling between the front and back gates is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOSFET. It is traditionally described by the classical Lim and Fossum model (Lim and Fossum, 1983). However, in the case of lightly-doped ultra-thin-body (UTB) SOI MOSFETs with ultra-thin gate dielectrics, significant deviations from this model have been observed and analyzed over the years. In this paper, we present a thorough review of special features of gate coupling in such devices, combining a large set of results from one-dimensional numerical simulations in classical and quantum-mechanical modes, experimental data and analytical modeling. We show that UTB SOI MOSFETs with ultra-thin gate dielectrics feature stronger modulation of the threshold voltage at the conduction side with opposite gate bias and much wider range of gate voltages for interface coupling than predicted by the Lim and Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects is presented. The model enables an easy assessment of the quantization-induced threshold voltage increase in a long-channel SOI MOSFET versus opposite gate bias and the electric field in the silicon film associated with gate decoupling.

  4. Temperature switchable polymer dielectrics.

    SciTech Connect

    Kholwadwala, Fenil Manish; Johnson, Ross Stefan; Dirk, Shawn M.

    2010-06-01

    Materials with switchable states are desirable in many areas of science and technology. The ability to thermally transform a dielectric material to a conductive state should allow for the creation of electronics with built-in safety features. Specifically, the non-desirable build-up and discharge of electricity in the event of a fire or over-heating would be averted by utilizing thermo-switchable dielectrics in the capacitors of electrical devices (preventing the capacitors from charging at elevated temperatures). We have designed a series of polymers that effectively switch from a non-conductive to a conductive state. The thermal transition is governed by the stability of the leaving group after it leaves as a free entity. Here, we present the synthesis and characterization of a series of precursor polymers that eliminate to form poly(p-phenylene vinylene) (PPV's).

  5. Broadband local dielectric spectroscopy

    NASA Astrophysics Data System (ADS)

    Labardi, M.; Lucchesi, M.; Prevosto, D.; Capaccioli, S.

    2016-05-01

    A route to extend the measurement bandwidth of local dielectric spectroscopy up to the MHz range has been devised. The method is based on a slow amplitude modulation at a frequency Ω of the excitation field oscillating at a frequency ω and the coherent detection of the modulated average electric force or force gradient at Ω. The cantilever mechanical response does not affect the measurement if Ω is well below its resonant frequency; therefore, limitations on the excitation field frequency are strongly reduced. Demonstration on a thin poly(vinyl acetate) film is provided, showing its structural relaxation spectrum on the local scale up to 45 °C higher than glass temperature, and nanoscale resolution dielectric relaxation imaging near conductive nanowires embedded in the polymer matrix was obtained up to 5 MHz frequency, with no physical reason to hinder further bandwidth extension.

  6. Temperature switchable polymer dielectrics.

    SciTech Connect

    Johnson, Ross Stefan

    2010-08-01

    Materials with switchable states are desirable in many areas of science and technology. The ability to thermally transform a dielectric material to a conductive state should allow for the creation of electronics with built-in safety features. Specifically, the non-desirable build-up and discharge of electricity in the event of a fire or over-heating would be averted by utilizing thermo-switchable dielectrics in the capacitors of electrical devices (preventing the capacitors from charging at elevated temperatures). We have designed a series of polymers that effectively switch from a non-conductive to a conductive state. The thermal transition is governed by the stability of the leaving group after it leaves as a free entity. Here, we present the synthesis and characterization of a series of precursor polymers that eliminate to form poly(p-phenylene vinylene) (PPV's).

  7. DIELECTRIC WALL ACCELERATOR TECHNOLOGY

    SciTech Connect

    Sampayan, S; Caporaso, G; Chen, Y; Harris, J; Hawkins, S; Holmes, C; Nelson, S; Poole, B; Rhodes, M; Sanders, D; Sullivan, J; Wang, L; Watson, J

    2007-10-18

    The dielectric wall accelerator (DWA) is a compact pulsed power device where the pulse forming lines, switching, and vacuum wall are integrated into a single compact geometry. For this effort, we initiated a extensive compact pulsed power development program and have pursued the study of switching (gas, oil, laser induced surface flashover and photoconductive), dielectrics (ceramics and nanoparticle composites), pulse forming line topologies (asymmetric and symmetric Blumleins and zero integral pulse forming lines), and multilayered vacuum insulator (HGI) technology. Finally, we fabricated an accelerator cell for test on ETAII (a 5.5 MeV, 2 kA, 70 ns pulsewidth electron beam accelerator). We review our past results and report on the progress of accelerator cell testing.

  8. Dielectric spectroscopy of polyaniline

    SciTech Connect

    Calleja, R.D.; Matveeva, E.M.

    1993-12-31

    Polyaniline films (PANI) are being considered as attractive new galvanic sources, electrochromic displays, chemical sensors, etc. So far much work has been done to study their optical, electrochemical and electrical properties. However, there are still doubts about the basic electric conductivity mechanisms of PANI. The aim of this paper is to study the influence of water molecules and acid anions on the properties of PANI films by dielectric spectroscopy.

  9. Structure in Thin and Ultrathin Spin-Cast Polymer Films

    NASA Astrophysics Data System (ADS)

    Frank, C. W.; Rao, V.; Despotopoulou, M. M.; Pease, R. F. W.; Hinsberg, W. D.; Miller, R. D.; Rabolt, J. F.

    1996-08-01

    The molecular organization in ultrathin polymer films (thicknesses less than 1000 angstroms) and thin polymer films (thicknesses between 1000 and 10,000 angstroms) may differ substantially from that of bulk polymers, which can lead to important differences in resulting thermophysical properties. Such constrained geometry films have been fabricated from amorphous poly(3-methyl-4-hydroxy styrene) (PMHS) and semicrystalline poly(di-n-hexyl silane) (PD6S) by means of spin-casting. The residual solvent content is substantially greater in ultrathin PMHS films, which suggests a higher glass transition temperature that results from a stronger hydrogen-bonded network as compared with that in thicker films. Crystallization of PD6S is substantially hindered in ultrathin films, in which a critical thickness of 150 angstroms is needed for crystalline morphology to exist and in which the rate of crystallization is initially slow but increases rapidly as the film approaches 500 angstroms in thickness.

  10. Fabrication of ultrathin SOI by SIMOX water bonding (SWB)

    NASA Astrophysics Data System (ADS)

    Tong, Q.-Y.; Gösele, U.

    1993-07-01

    Ultrathin silicon-on-insulator (SOI) layers of separation by implantation of oxygen (SIMOX) wafers have been transferred onto thermally oxidized silicon wafers by wafer bonding technology. Due to the technical availability and the complementary nature of SIMOX and wafer bonding approaches, SIMOX wafer bonding (SWB) solves some of the respective major difficulties faced by both SIMOX and wafer bonding for device quality ultrathin SOI mass production: the preparation of adequate buried oxide (including its interfaces) in SIMOX and the uniformly thinning one of the bonded wafers to less than 0.1 μm in wafer bonding. The effect of positive charges in the oxide on bondability of ultrathin SOI films and possible applications of SWB will also be outlined.

  11. Large ultrathin shelled drops produced via non-confined microfluidics.

    PubMed

    Chaurasia, Ankur S; Josephides, Dimitris N; Sajjadi, Shahriar

    2015-02-02

    We present a facile approach for producing large and monodisperse core-shell drops with ultrathin shells using a single-step process. A biphasic compound jet is introduced into a quiescent third (outer) phase that ruptures to form core-shell drops. Ultrathin shelled drops could only be produced within a certain range of surfactant concentrations and flow rates, highlighting the effect of interfacial tension in engulfing the core in a thin shell. An increase in surfactant concentrations initially resulted in drops with thinner shells. However, the drops with thinnest shells were obtained at an optimum surfactant concentration, and a further increase in the surfactant concentrations increased the shell thickness. Highly monodisperse (coefficient of variation smaller than 3 %) core-shell drops with diameter of ∼200 μm-2 mm with shell thickness as small as ∼2 μm were produced. The resulting drops were stable enough to undergo polymerisation and produce ultrathin shelled capsules.

  12. Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors.

    PubMed

    Rim, You Seung; Bae, Sang-Hoon; Chen, Huajun; Yang, Jonathan L; Kim, Jaemyung; Andrews, Anne M; Weiss, Paul S; Yang, Yang; Tseng, Hsian-Rong

    2015-12-22

    Conformal bioelectronics enable wearable, noninvasive, and health-monitoring platforms. We demonstrate a simple and straightforward method for producing thin, sensitive In2O3-based conformal biosensors based on field-effect transistors using facile solution-based processing. One-step coating via aqueous In2O3 solution resulted in ultrathin (3.5 nm), high-density, uniform films over large areas. Conformal In2O3-based biosensors on ultrathin polyimide films displayed good device performance, low mechanical stress, and highly conformal contact determined using polydimethylsiloxane artificial skin having complex curvilinear surfaces or an artificial eye. Immobilized In2O3 field-effect transistors with self-assembled monolayers of NH2-terminated silanes functioned as pH sensors. Functionalization with glucose oxidase enabled d-glucose detection at physiologically relevant levels. The conformal ultrathin field-effect transistor biosensors developed here offer new opportunities for future wearable human technologies.

  13. Engineering curvature in graphene ribbons using ultrathin polymer films.

    PubMed

    Li, Chunyu; Koslowski, Marisol; Strachan, Alejandro

    2014-12-10

    We propose a method to induce curvature in graphene nanoribbons in a controlled manner using an ultrathin thermoset polymer in a bimaterial strip setup and test it via molecular dynamics (MD) simulations. Continuum mechanics shows that curvature develops to release the residual stress caused by the chemical and thermal shrinkage of the polymer during processing and that this curvature increases with decreasing film thickness; however, significant deformation is only achieved for ultrathin polymer films. Quite surprisingly, explicit MD simulations of the curing and annealing processes show that the predicted trend not just continues down to film thicknesses of 1-2 nm but that the curvature development is enhanced significantly in such ultrathin films due to surface tension effects. This combination of effects leads to very large curvatures of over 0.14 nm(-1) that can be tuned via film thickness. This provides a new avenue to engineer curvature and, thus, electromagnetic properties of graphene.

  14. Swelling of ultrathin crosslinked polyamide water purification membranes

    NASA Astrophysics Data System (ADS)

    Chan, Edwin; Stafford, Christopher

    2013-03-01

    Polyamide (PA) ultrathin films represent the state-of-the-art nanofiltration and reverse osmosis membranes used in water desalination. The performance of these materials, such as permselectivity, is intimately linked with extent of swelling of the PA network. Thus, quantifying their swelling behavior would be a useful and simple route to understanding the specific network structural parameters that control membrane performance. In this work, we measure the swelling behavior of PA ultrathin films using X-ray reflectivity as a function of water hydration. By applying the Flory-Rehner theory used to describe the swelling behavior of polymer networks, we quantify the PA network properties including Flory interaction parameter and the monomer units between crosslinks. Finally, we demonstrate application of this measurement approach for characterizing the network properties of different types of PA ultrathin films relevant to water purification and discuss the relationship between network and transport properties. Materials Science and Engineering Division

  15. Characterization of dielectric breakdown behavior by in situ transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Bonifacio, Cecile Semana

    stage of sintering. The thermal effects were found to be driven by reduction-oxidation reactions of nickel oxide with carbon. The presence of carbon promotes the removal of surface oxides at lower temperatures and, therefore, can accelerate densification. By the controlled application of electrical bias, EFAS conditions were reproduced during in situ TEM and revealed reduction of ultra-thin nickel oxide surface layers by electric field-induced dielectric breakdown. The results provide evidence for previously suggested effects of local electric field amplification at inter-particle contact areas, which, hence, triggers surface cleaning through electric field-induced dielectric breakdown.

  16. Tunable dielectric properties of ferrite-dielectric based metamaterial.

    PubMed

    Bi, K; Huang, K; Zeng, L Y; Zhou, M H; Wang, Q M; Wang, Y G; Lei, M

    2015-01-01

    A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices.

  17. Tunable Dielectric Properties of Ferrite-Dielectric Based Metamaterial

    PubMed Central

    Bi, K.; Huang, K.; Zeng, L. Y.; Zhou, M. H.; Wang, Q. M.; Wang, Y. G.; Lei, M.

    2015-01-01

    A ferrite-dielectric metamaterial composed of dielectric and ferrite cuboids has been investigated by experiments and simulations. By interacting with the electromagnetic wave, the Mie resonance can take place in the dielectric cuboids and the ferromagnetic precession will appear in the ferrite cuboids. The magnetic field distributions show the electric Mie resonance of the dielectric cuboids can be influenced by the ferromagnetic precession of ferrite cuboids when a certain magnetic field is applied. The effective permittivity of the metamaterial can be tuned by modifying the applied magnetic field. A good agreement between experimental and simulated results is demonstrated, which confirms that these metamaterials can be used for tunable microwave devices. PMID:25993433

  18. The dielectric breakdown limit of silicone dielectric elastomer actuators

    NASA Astrophysics Data System (ADS)

    Gatti, Davide; Haus, Henry; Matysek, Marc; Frohnapfel, Bettina; Tropea, Cameron; Schlaak, Helmut F.

    2014-02-01

    Soft silicone elastomers are used in a generation of dielectric elastomer actuators (DEAs) with improved actuation speed and durability compared to the commonly used, highly viscoelastic polyacrylate 3M VHB™ films. The maximum voltage-induced stretch of DEAs is ultimately limited by their dielectric breakdown field strength. We measure the dependence of dielectric breakdown field strength on thickness and stretch for a silicone elastomer, when voltage-induced deformation is prevented. The experimental results are combined with an analytic model of equi-biaxial actuation to show that accounting for variable dielectric field strength results in different values of optimal pre-stretch and thickness that maximize the DEA actuation.

  19. Method for laser welding ultra-thin metal foils

    DOEpatents

    Pernicka, J.C.; Benson, D.K.; Tracy, C.E.

    1996-03-26

    A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld. 5 figs.

  20. Method for laser welding ultra-thin metal foils

    DOEpatents

    Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

    1996-01-01

    A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld.

  1. Phase Formation Behavior in Ultrathin Iron Oxide.

    PubMed

    Jõgi, Indrek; Jacobsson, T Jesper; Fondell, Mattis; Wätjen, Timo; Carlsson, Jan-Otto; Boman, Mats; Edvinsson, Tomas

    2015-11-17

    Nanostructured iron oxides, and especially hematite, are interesting for a wide range of applications ranging from gas sensors to renewable solar hydrogen production. A promising method for deposition of low-dimensional films is atomic layer deposition (ALD). Although a potent technique, ALD of ultrathin films is critically sensitive to the substrate and temperature conditions where initial formation of islands and crystallites influences the properties of the films. In this work, deposition at the border of the ALD window forming a hybrid ALD/pulsed CVD (pCVD) deposition is utilized to obtain a deposition less sensitive to the substrate. A thorough analysis of iron oxide phases formation on two different substrates, Si(100) and SiO2, was performed. Films between 3 and 50 nm were deposited and analyzed with diffraction techniques, high-resolution Raman spectroscopy, and optical spectroscopy. Below 10 nm nominal film thickness, island formation and phase dependent particle crystallization impose constraints for deposition of phase pure iron oxides on non-lattice-matching substrates. Films between 10 and 20 nm thickness on SiO2 could effectively be recrystallized into hematite whereas for the corresponding films on Si(100), no recrystallization occurred. For films thicker than 20 nm, phase pure hematite can be formed directly with ALD/pCVD with very low influence of the substrate on either Si or SiO2. For more lattice matched substrates such as SnO2:F, Raman spectroscopy indicated formation of the hematite phase already for films with 3 nm nominal thickness and clearly for 6 nm films. Analysis of the optical properties corroborated the analysis and showed a quantum confined blue-shift of the absorption edge for the thinnest films.

  2. Semiconductor/dielectric interface engineering and characterization

    NASA Astrophysics Data System (ADS)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  3. Dielectric Nonlinear Transmission Line (Postprint)

    DTIC Science & Technology

    2011-12-01

    Technical Paper 3. DATES COVERED (From - To) 2011 4. TITLE AND SUBTITLE Dielectric Nonlinear Transmission Line (POSTPRINT) 5a. CONTRACT NUMBER...14. ABSTRACT A parallel plate nonlinear transmission line (NLTL) was constructed. Periodic loading of nonlinear dielectric slabs provides the...846-9101 Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. 239.18 Dielectric Nonlinear Transmission Line David M. French, Brad W. Hoff

  4. Dielectric properties of lunar surface

    NASA Astrophysics Data System (ADS)

    Yushkova, O. V.; Kibardina, I. N.

    2017-03-01

    Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

  5. Surface-sensitive UHV dielectric studies of nanoscale organic thin films: Adsorption, crystallization, and sublimation

    NASA Astrophysics Data System (ADS)

    Underwood, Jason M.

    Nanoscale systems are small collections of atoms or molecules, which as a result of their limited extent, show measurable thermodynamic deviations from bulk samples of the same species. The deviations may result from purely finite-size effects, or may be due to an increased significance of the interaction between the nanoscale system and its container. Ultra-thin (<100 nm) films of organic molecules adsorbed on surfaces afford unique opportunities to study the interplay of forces relevant to nanoscale physics. This thesis describes the development of a novel ultra-high vacuum apparatus to study the behavior of adsorbed polar molecules via dielectric spectroscopy (UHV-DS). Ultra-thin films are grown and characterized in-situ. The use of interdigitated electrode capacitors and a ratio-transformer bridge technique yields resolutions of ˜1 aF and ˜10-5 ppm in the capacitance and loss tangent, respectively. Typical sensitivity is 10 aF per monolayer at 80 K. Results are given for studies on water, methanol, and Cp* (a synthetic molecular rotor). The desorption event in the dielectric spectra is correlated with thermal desorption spectroscopy. During growth of methanol films, we observe partial crystallization for temperatures above ≳ 100 K. Crystallization is also observed upon heating glassy films grown at 80 K. Finally, we discuss UHV-DS as a probe for solid thin-film vapor pressure measurements, and show that our data on methanol compare favorably with those in the literature.

  6. Surface plasmon exciton transition in ultra-thin silver and silver iodide films

    NASA Astrophysics Data System (ADS)

    Bharathi Mohan, D.; Sreejith, K.; Sunandana, C. S.

    2007-10-01

    Silver thin films in the thickness range 2 10 nm produced by thermal evaporation onto glass substrates were systematically iodized and carefully characterized by X-ray diffraction, atomic force microscopy (AFM) and optical absorption spectroscopy. While the uniodized films are X-ray amorphous in keeping with their quasi-continuous nature and 2D islanded structure, briefly iodized films showed characteristic beta AgI structure. Most interestingly, AFM of Ag films revealed uniform triangle-shaped embryos whose shape does not change appreciably upon iodization. Optical absorption spectra of uniodized Ag films show intense surface plasmon resonance (SPR) features with maxima at 440, 484 and 498 nm for the films of thicknesses 2, 5 and 10 nm, respectively, with 5 nm films showing properties characteristic of optimally matched dielectric and electronic properties of the substrate and sample, respectively. Finally, an interesting and unique SPR exciton phase transition is observed as the ultra-thin films are progressively iodized. These Ag and AgI films could be promising candidates for plasmonic and nanophotonic applications.

  7. Optical properties of Bi2Se3: from bulk to ultrathin films

    NASA Astrophysics Data System (ADS)

    Eddrief, M.; Vidal, F.; Gallas, B.

    2016-12-01

    We report on the determination of the dielectric functions of Bi2Se3 thin films and bulk material. The Bi2Se3 thin films with thicknesses ranging from 3-54 quintuple layers (QL) were grown by molecular beam epitaxy on GaAs(1 1 1)B substrates and the optical properties were determined from spectroscopic ellipsometry in the range of 0.5 eV-6 eV. We observed five absorption bands in the bulk sample, with a strong maximum near 2 eV, which were also present in the films down to 19 QL. Reducing the number below 19 QL in the Bi2Se3 films caused dampening and broadening of the bulk absorption bands below 2 eV, and a shift to a higher energy of the band near 2 eV. Our experimental results thus provide evidence of marked changes in the joint density of states of Bi2Se3 below 19 QL, indicating that the whole bulk band structure is affected for the ultrathin epilayers.

  8. Ultra-thin Low-Frequency Broadband Microwave Absorber Based on Magnetic Medium and Metamaterial

    NASA Astrophysics Data System (ADS)

    Cheng, Yongzhi; He, Bo; Zhao, Jingcheng; Gong, Rongzhou

    2017-02-01

    An ultra-thin low-frequency broadband microwave absorber (MWA) based on a magnetic rubber plate (MRP) and cross-shaped structure (CSS) metamaterial (MM) was presented numerically and experimentally. The designed composite MWA is consisted of the MRP, CSS resonator, dielectric substrate and metallic background plane. The low-frequency absorption can be easily adjusted by tuning the geometric parameter of the CSS MM and the thickness of MPR. A bandwidth (i.e. the reflectance is below -10 dB) from 2.5 GHz to 5 GHz can be achieved with the total thickness of about 2 mm in experiments. The broadband absorption is attributed to the overlap of two resonant absorption peaks originated from MRP and CSS MM, respectively. More importantly, the thickness of the composite WMA is much thinner ( λ/40; λ is the operation center frequency), which could operate well at wide incidence angles for both transverse electric and transverse magnetic waves. Thus, it can be expected that our design will be applicable in the area of eliminating microwave energy and electromagnetic stealth.

  9. Ultra-thin anisotropic metasurface for polarized beam splitting and reflected beam steering applications

    NASA Astrophysics Data System (ADS)

    Guo, Wenlong; Wang, Guangming; Li, Tangjing; Li, Haipeng; Zhuang, Yaqiang; Hou, Haisheng

    2016-10-01

    In this paper, we propose a polarization beam splitter utilizing an ultra-thin anisotropic metasurface. The proposed anisotropic element is composed of triple-layered rectangular patches spaced with double-layered dielectric isolators. By tailoring the metallic patches, the cell is capable of transmitting x-polarized waves efficiently and reflecting y-polarized beams with almost 100% efficiency at 15 GHz. In addition to this, the reflected phases can be modulated by adjusting the size of the element, which contributes to beam steering in reflection mode. By assigning gradient phases on the metasurface, the constructed sample has the ability to refract x-polarized waves normally and reflect y-polarized beams anomalously. For verification, a sample with a size of 240 × 240 mm2 is fabricated and measured. Consistent numerical and experimental results have both validated the efficiently anomalous reflection for y-polarized waves and normal refraction for x-polarized beams operating from 14.6-15.4 GHz. Furthermore, the proposed sample has a thickness of 0.1λ at 15 GHz, which provides a promising approach for steering and splitting beams in a compact size.

  10. Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics

    NASA Astrophysics Data System (ADS)

    Carter, Andrew Daniel

    III-V-based MOSFETs have the potential to exceed the performance of silicon-based MOSFETs due to the semiconductor's small electron effective mass. Modern silicon-based MOSFETs with 22 nm gate lengths utilize high-k gate insulators and non-planar device geometries to optimize device performance. III-V HEMT technology has achieved similar gate lengths, but large source-drain access resistances and the lack of high-quality gate insulators prevent further device performance scaling. Sub-22 nm gate length III-V MOSFETs require metal-semiconductor contact resistivity to be less than 1 ohm-micron squared, gate insulators with less than 1 nm effective oxide thickness, and semiconductor-insulator interface trap densities less than 2E12 per square centimeter per electron volt. This dissertation presents InGaAs-based III-V MOSFET process flows and device results to assess their use in VLSI circuits. Previous III-V MOSFET results focused on long (>100 nm) gate lengths and ion implantation for source-drain region formation. Scaling III-V MOSFETs to shorter gate lengths requires source-drain regions that have low sheet resistance, high mobile charge densities, and low metal-semiconductor contact resistance. MBE- and MOCVD-based raised epitaxial source-drain regrowth meet these requirements. MBE InAs source-drain regrowth samples have shown 0.5 to 2 ohm-micron squared metal semiconductor contact resistivities. MOCVD InGaAs source-drain regrowth samples have shown < 100 ohm-micron single-sided access resistance to InGaAs MOSFETs. Gate insulators on III-V materials require large conduction band offsets to the channel, high dielectric permittivities, and low semiconductor-insulator interface trap densities. An in-situ hydrogen plasma / trimethylaluminum treatment has been developed to lower the gate semiconductor-insulator interface trap density. This treatment, done immediately before gate insulator deposition, has been shown to lower MOS capacitor interface trap densities by more

  11. Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

    PubMed

    Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

    2017-03-03

    We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

  12. Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

    SciTech Connect

    Kawanago, Takamasa Oda, Shunri

    2016-01-25

    In this study, we apply self-assembled-monolayer (SAM)-based gate dielectrics to the fabrication of molybdenum disulfide (MoS{sub 2}) field-effect transistors. A simple fabrication process involving the selective formation of a SAM on metal oxides in conjunction with the dry transfer of MoS{sub 2} flakes was established. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were demonstrated with the ultrathin SAM-based gate dielectrics accompanied by a low gate leakage current. The small SS and no hysteresis indicate the superior interfacial properties of the MoS{sub 2}/SAM structure. Cross-sectional transmission electron microscopy revealed a sharp and abrupt interface of the MoS{sub 2}/SAM structure. The SAM-based gate dielectrics are found to be applicable to the fabrication of low-voltage MoS{sub 2} field-effect transistors and can also be extended to various layered semiconductor materials. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.

  13. Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

    NASA Astrophysics Data System (ADS)

    Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

    2017-03-01

    We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

  14. Low Dielectric Polymers

    NASA Technical Reports Server (NTRS)

    Venumbaka, Sreenivasulu R.; Cassidy, Patrick E.

    2002-01-01

    This report summarizes results obtained from research funded through Research Cooperative Agreement No. NCC-1-01033-"Low Dielectric Polymers" (from 5/10/01 through 5/09/02). Results are reported in three of the proposed research areas (Tasks 1-3 in the original proposal): (1) Repeat and confirm the preparation and properties of the new alkyl-substituted PEK, 6HC17-PEK, (2) Prepare and evaluate polymers derived from a highly fluorinated monomer, and (3) Prepare and evaluate new silicon and/or fluorine-containing polymers expected to retain useful properties at low temperature.

  15. Inorganic optical dielectric films

    NASA Astrophysics Data System (ADS)

    Woollam, John A.

    1996-07-01

    Dielectric coatings have been in use for a very long time, yet today they represent a steadily growing wold-wide industry. A wide range of materials, and applications from the near ultraviolet into the infrared are in use, or under development. This paper is a brief survey, including references to the literature, and a discussion of materials diagnostics. Discussed is the microstructure, optical constants and their relationship as determined especially by optical measurements. This paper emphasizes the materials science aspects rather than applications.

  16. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    SciTech Connect

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario; Zhang, Meiyun; Long, Shibing; Lian, Xiaojuan; Miao, Feng; Larcher, Luca; Wu, Ernest

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  17. Magnetic surface anisotropy of amorphous Fe-B ultrathin films

    SciTech Connect

    Zhang, L.

    1986-01-01

    Ferromagnetic resonance experiments were performed at room temperature on amorphous ultrathin films of Fe/sub x/B/sub 100-x/ (x = 50, x = 70) at two frequencies (f = 9.515 GHz and f = 24.03 GHz). Two different configurations were employed, with the applied field being either parallel or perpendicular to the film surface. The amorphous Fe-B ultrathin film samples were successfully fabricated by d.c. sputtering deposition techniques. Their thicknesses range from about 18 A to 77 A. General formulas for the free energy were derived from Hamilton's principle and were adapted to amorphous materials. The ultrathin nature of the samples allows one to employ a surface inhomogeneity model, which involves only surface anisotropy, and to ignore any volume inhomogeneities. No approximation beyond the usual linearization of the equation of motion and the assumption of the uniformity of the microwave field throughout the sample was involved. It was found that in ultrathin films the observed FMR modes were surface-induced modes in the parallel configuration and spin-wave modes in the perpendicular configuration.

  18. Hydrothermal Synthesis and Catalytic Application of Ultrathin Rhodium Nanosheet Nanoassemblies.

    PubMed

    Bai, Juan; Xu, Guang-Rui; Xing, Shi-Hui; Zeng, Jing-Hui; Jiang, Jia-Xing; Chen, Yu

    2016-12-14

    Ultrathin noble metal nanosheets with atomic thickness exhibit abnormal electronic, surfacial, and photonic properties due to the unique two-dimensional (2D) confinement effect, which have attracted intensive research attention in catalysis/electrocatalysis. In this work, the well-defined ultrathin Rh nanosheet nanoassemblies with dendritic morphology are synthesized by a facile hydrothermal method with assistance of poly(allylamine hydrochloride) (PAH), where PAH effectively acts as the complexant and shape-directing agent. Transmission electron microscopy and atomic force microscopy images reveal the thickness of 2D Rh nanosheet with (111) planes is only ca. 0.8-1.1 nm. Nitrogen adsorption-desorption measurement displays the specific surface area of the as-prepared ultrathin Rh nanosheet nanoassemblies is 139.4 m(2) g(-1), which is much bigger than that of homemade Rh black (19.8 m(2) g(-1)). Detailed catalytic investigations display the as-prepared ultrathin Rh nanosheet nanoassemblies have nearly 20.4-fold enhancement in mass-activity for the hydrolysis of ammonia borane as compared with homemade Rh black.

  19. Three-Component Integrated Ultrathin Organic Photosensors for Plastic Optoelectronics.

    PubMed

    Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Cheng, Cheng; Hu, Wenping; Liu, Yunqi

    2016-01-27

    By three-component integration, an integrated organic photosensor is presented using common organic dyes as building blocks. Gray-scale photosensing and signal amplification are achieved in the device within a wide range of light intensities. Moreover, with ultrathin film techniques, 470 nm thick devices are realized and continue to work when harshly bent.

  20. 4-fold photocurrent enhancement in ultrathin nanoplasmonic perovskite solar cells.

    PubMed

    Cai, Boyuan; Peng, Yong; Cheng, Yi-Bing; Gu, Min

    2015-11-30

    Although perovskite materials have been widely investigated for thin-film photovoltaic devices due to the potential for high efficiency, their high toxicity has pressed the development of a solar cell structure of an ultra-thin absorber layer. But insufficient light absorption could be a result of ultra-thin perovskite films. In this paper, we propose a new nanoplasmonic solar cell that integrates metal nanoparticles at its rear/front surfaces of the perovskite layer. Plasmon-enhanced light scattering and near-field enhancement effects from lumpy sliver nanoparticles result in the photocurrent enhancement for a 50 nm thick absorber, which is higher than that for a 300 nm thick flat perovskite solar cell. We also predict the 4-fold photocurrent enhancement in an ultrathin perovskite solar cell with the absorber thickness of 10 nm. Our results pave a new way for ultrathin high-efficiency solar cells with either a lead-based or a lead-free perovskite absorption layer.

  1. Ultra-Thin Coatings Beautify Art

    NASA Technical Reports Server (NTRS)

    2013-01-01

    The craftsmen in the Roman Empire who constructed the Lycurgus Cup 17 centuries ago probably didn't think their artifact would survive for nearly 2,000 years as a prized possession. And they certainly couldn't have known that the technology they used to make it would eventually become an important part of space exploration. Carved from one solid mass, the cup is one of the few complete glass objects from that period, and the only one made from dichroic glass. Meaning "two-colored" in Greek, dichroic glass was originally created by adding trace amounts of gold and silver to a large volume of glass melt. The resulting medium partially reflects the light passing through it, causing an observer to see different colors depending on the direction of the light source. The Lycurgus Cup, for example, is famous for appearing green in daylight and red when lit at night, symbolic of the ripening grapes used to fill it with wine. NASA revitalized the production of dichroic glass in the 1950s and 1960s as a means of protecting its astronauts. Ordinary clear substances cannot protect human vision from the harsh rays of unfiltered sunlight, and everything from the human body to spacecraft sensors and computers are at risk if left unprotected from the radiation that permeates space. The microscopic amounts of metal present in dichroic glass make it an effective barrier against such harmful radiation. While the ancient manufacturing technique called for adding metals to glass melt, NASA developed a process in which metals are vaporized by electron beams in a vacuum chamber and then applied directly to surfaces in an ultra-thin film. The vapor condenses in the form of crystal structures, and the process is repeated for up to several dozen coatings. The resulting material, still only about 30 millionths of an inch thick, is sufficient to reflect radiation even while the glass, or polycarbonate, as in the case of space suit helmets, remains transparent to the human eye.

  2. Self-assembly of large-scale and ultrathin silver nanoplate films with tunable plasmon resonance properties.

    PubMed

    Zhang, Xiao-Yang; Hu, Anming; Zhang, Tong; Lei, Wei; Xue, Xiao-Jun; Zhou, Yunhong; Duley, Walt W

    2011-11-22

    We describe a rapid, simple, room-temperature technique for the production of large-scale metallic thin films with tunable plasmonic properties assembled from size-selected silver nanoplates (SNPs). We outline the properties of a series of ultrathin monolayer metallic films (8-20 nm) self-assembled on glass substrates in which the localized surface plasmon resonance can be tuned over a range from 500 to 800 nm. It is found that the resonance peaks of the films are strongly dependent on the size of the nanoplates and the refractive index of the surrounding dielectric. It is also shown that the bandwidth and the resonance peak of the plasmon resonance spectrum of the metallic films can be engineered by simply controlling aggregation of the SNP. A three-dimensional finite element method was used to investigate the plasmon resonance properties for individual SNPs in different dielectrics and plasmon coupling in SNP aggregates. A 5-17 times enhancement of scattering from these SNP films has been observed experimentally. Our experimental results, together with numerical simulations, indicate that this self-assembly method shows great promise in the production of nanoscale metallic films with enormous electric-field enhancements at visible and near-infrared wavelengths. These may be utilized in biochemical sensing, solar photovoltaic, and optical processing applications.

  3. Voltage sensor and dielectric material

    DOEpatents

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  4. Microwave Propagation in Dielectric Fluids.

    ERIC Educational Resources Information Center

    Lonc, W. P.

    1980-01-01

    Describes an undergraduate experiment designed to verify quantitatively the effect of a dielectric fluid's dielectric constant on the observed wavelength of microwave radiation propagating through the fluid. The fluid used is castor oil, and results agree with the expected behavior within 5 percent. (Author/CS)

  5. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    NASA Astrophysics Data System (ADS)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  6. Low dielectric polyimide fibers

    NASA Technical Reports Server (NTRS)

    Dorogy, William E., Jr. (Inventor); St.clair, Anne K. (Inventor)

    1994-01-01

    A high temperature resistant polyimide fiber that has a dielectric constant of less than 3 is presented. The fiber was prepared by first reacting 2,2-bis (4-(4aminophenoxy)phenyl) hexafluoropropane with 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride in an aprotic solvent to form a polyamic acid resin solution. The polyamic acid resin solution is then extruded into a coagulation medium to form polyamic acid fibers. The fibers are thermally cured to their polyimide form. Alternatively, 2,2-bis(4-(4-aminophenoxy)phenyl) hexafluoropropane is reacted with 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride to form a polyamic acid, and the polyamic acid is chemically converted to its polyimide form. The polyimide is then dissolved in a solvent to form a polyimide resin solution, and the polyimide resin is extruded into a coagulation medium to form a polyimide wet gel filament. In order to obtain polyimide fibers of increased tensile properties, the polyimide wet gel filaments are stretched at elevated temperatures. The tensile properties of the fibers were measured and found to be in the range of standard textile fibers. Polyimide fibers obtained by either method will have a dielectric constant similar to that of the corresponding polymer, viz., less than 3 at 10 GHz.

  7. Folded dielectric elastomer actuators

    NASA Astrophysics Data System (ADS)

    Carpi, Federico; Salaris, Claudio; DeRossi, Danilo

    2007-04-01

    Polymer-based linear actuators with contractile ability are currently demanded for several types of applications. Within the class of dielectric elastomer actuators, two basic configurations are available today for such a purpose: the multi-layer stack and the helical structure. The first consists of several layers of elementary planar actuators stacked in series mechanically and parallel electrically. The second configuration relies on a couple of helical compliant electrodes alternated with a couple of helical dielectrics. The fabrication of both these configurations presents some specific drawbacks today, arising from the peculiarity of each structure. Accordingly, the availability of simpler solutions may boost the short-term use of contractile actuators in practical applications. For this purpose, a new configuration is here described. It consists of a monolithic structure made of an electroded sheet, which is folded up and compacted. The resulting device is functionally equivalent to a multi-layer stack with interdigitated electrodes. However, with respect to a stack the new configuration is advantageously not discontinuous and can be manufactured in one single phase, avoiding layer-by-layer multi-step procedures. The development and preliminary testing of prototype samples of this new actuator made of a silicone elastomer are presented here.

  8. Dielectric laser accelerators

    NASA Astrophysics Data System (ADS)

    England, R. Joel; Noble, Robert J.; Bane, Karl; Dowell, David H.; Ng, Cho-Kuen; Spencer, James E.; Tantawi, Sami; Wu, Ziran; Byer, Robert L.; Peralta, Edgar; Soong, Ken; Chang, Chia-Ming; Montazeri, Behnam; Wolf, Stephen J.; Cowan, Benjamin; Dawson, Jay; Gai, Wei; Hommelhoff, Peter; Huang, Yen-Chieh; Jing, Chunguang; McGuinness, Christopher; Palmer, Robert B.; Naranjo, Brian; Rosenzweig, James; Travish, Gil; Mizrahi, Amit; Schachter, Levi; Sears, Christopher; Werner, Gregory R.; Yoder, Rodney B.

    2014-10-01

    The use of infrared lasers to power optical-scale lithographically fabricated particle accelerators is a developing area of research that has garnered increasing interest in recent years. The physics and technology of this approach is reviewed, which is referred to as dielectric laser acceleration (DLA). In the DLA scheme operating at typical laser pulse lengths of 0.1 to 1 ps, the laser damage fluences for robust dielectric materials correspond to peak surface electric fields in the GV /m regime. The corresponding accelerating field enhancement represents a potential reduction in active length of the accelerator between 1 and 2 orders of magnitude. Power sources for DLA-based accelerators (lasers) are less costly than microwave sources (klystrons) for equivalent average power levels due to wider availability and private sector investment. Because of the high laser-to-particle coupling efficiency, required pulse energies are consistent with tabletop microJoule class lasers. Combined with the very high (MHz) repetition rates these lasers can provide, the DLA approach appears promising for a variety of applications, including future high-energy physics colliders, compact light sources, and portable medical scanners and radiative therapy machines.

  9. Dielectric Actuation of Polymers

    NASA Astrophysics Data System (ADS)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  10. A dielectric omnidirectional reflector

    PubMed

    Fink; Winn; Fan; Chen; Michel; Joannopoulos; Thomas

    1998-11-27

    A design criterion that permits truly omnidirectional reflectivity for all polarizations of incident light over a wide selectable range of frequencies was used in fabricating an all-dielectric omnidirectional reflector consisting of multilayer films. The reflector was simply constructed as a stack of nine alternating micrometer-thick layers of polystyrene and tellurium and demonstrates omnidirectional reflection over the wavelength range from 10 to 15 micrometers. Because the omnidirectionality criterion is general, it can be used to design omnidirectional reflectors in many frequency ranges of interest. Potential uses depend on the geometry of the system. For example, coating of an enclosure will result in an optical cavity. A hollow tube will produce a low-loss, broadband waveguide, whereas a planar film could be used as an efficient radiative heat barrier or collector in thermoelectric devices.

  11. The Dielectric Wall Accelerator

    SciTech Connect

    Caporaso, George J.; Chen, Yu-Jiuan; Sampayan, Stephen E.

    2009-01-01

    The Dielectric Wall Accelerator (DWA), a class of induction accelerators, employs a novel insulating beam tube to impress a longitudinal electric field on a bunch of charged particles. The surface flashover characteristics of this tube may permit the attainment of accelerating gradients on the order of 100 MV/m for accelerating pulses on the order of a nanosecond in duration. A virtual traveling wave of excitation along the tube is produced at any desired speed by controlling the timing of pulse generating modules that supply a tangential electric field to the tube wall. Because of the ability to control the speed of this virtual wave, the accelerator is capable of handling any charge to mass ratio particle; hence it can be used for electrons, protons and any ion. The accelerator architectures, key technologies and development challenges will be described.

  12. Multilayer optical dielectric coating

    DOEpatents

    Emmett, John L.

    1990-01-01

    A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

  13. Dielectric screening in semiconductors

    NASA Astrophysics Data System (ADS)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  14. Ultrathin film organic transistors: precise control of semiconductor thickness via spin-coating.

    PubMed

    Zhang, Fengjiao; Di, Chong-an; Berdunov, Nikolai; Hu, Yuanyuan; Hu, Yunbin; Gao, Xike; Meng, Qing; Sirringhaus, Henning; Zhu, Daoben

    2013-03-13

    Construction of ultrathin film organic transistors is an important challenge towards deeper understanding of the charge transport mechanism and multifunctional applications. We report on precise thickness control of ultrathin films of several organic semiconductors by using a simple spin-coating approach. Ultrathin film, n-channel organic transistors with mobilities well over 1.0 cm(2) V(-1) s(-1) have been realized and their potential in high-sensitivity gas sensing and other applications is demonstrated.

  15. Preparation and Properties of Transparent Ultrathin Lanthanide-Complex Films.

    PubMed

    Li, Yali; Xu, Yang; Wang, Yige

    2016-07-25

    Highly transparent ultrathin films (UTFs) based on alternative layer-by-layer assembly of Eu- and Tb-based lanthanide complexes (LCs) and Mg-Al-layered double hydroxide (LDH) nanosheets are reported herein. UV-visible absorption and fluorescence spectroscopy showed an orderly growth of the two types of ultrathin films upon increasing the number of deposition cycles. AFM and SEM measurements indicate that the films feature periodic layered structures as well as uniform surface morphology. Luminescent investigations reveal that (LCs/LDH)n UTFs can detect Fe(3+) with relative selectivity and high sensitivity (Stern-Volmer constant KSV =8.43×10(3)  L mol(-1) ); this suggests that (LCs/LDH)n UTFs could be a promising luminescent probe for selectively sensing Fe(3+) ion.

  16. A broadband terahertz ultrathin multi-focus lens

    PubMed Central

    He, Jingwen; Ye, Jiasheng; Wang, Xinke; Kan, Qiang; Zhang, Yan

    2016-01-01

    Ultrathin transmission metasurface devices are designed on the basis of the Yang-Gu amplitude-phase retrieval algorithm for focusing the terahertz (THz) radiation into four or nine spots with focal spacing of 2 or 3 mm at a frequency of 0.8 THz. The focal properties are experimentally investigated in detail, and the results agree well with the theoretical expectations. The designed THz multi-focus lens (TMFL) demonstrates a good focusing function over a broad frequency range from 0.3 to 1.1 THz. As a transmission-type device based on metasurface, the diffraction efficiency of the TMFL can be as high as 33.92% at the designed frequency. The imaging function of the TMFL is also demonstrated experimentally and clear images are obtained. The proposed method produces an ultrathin, low-cost, and broadband multi-focus lens for THz-band application PMID:27346430

  17. Features of noise in ultrathin gold nanowire structures

    NASA Astrophysics Data System (ADS)

    Handziuk, V.; Pud, S.; Coppola, M.; Kisner, A.; Vitusevich, S.

    2016-05-01

    Bundles of ultrathin gold nanowires (Au NWs, 2 nm in diameter) were fabricated and subsequently assembled onto electrodes. Electrical measurements and noise spectroscopy techniques were applied for sample characterization. The peculiarities of noise behavior in the system of bundles of ultrathin gold nanowires were studied. The measured power spectral density of flicker noise was proportional to current squared, which reflects ohmic behavior in NW structures. Lorentzian-shaped components were revealed in the noise spectra. They are suggested to be the result of the participation of molecules adsorbed on the NW surface in transport phenomena. The presence of molecular interfaces was confirmed by high-resolution transmission electron micrographs. The adsorbed molecules play an important role in charge transport and therefore determine electrical and noise properties of the NW structures. The results should be taken into account for the development of NW devices for sensing and molecular electronics applications.

  18. Strain-induced water dissociation on supported ultrathin oxide films

    PubMed Central

    Song, Zhenjun; Fan, Jing; Xu, Hu

    2016-01-01

    Controlling the dissociation of single water molecule on an insulating surface plays a crucial role in many catalytic reactions. In this work, we have identified the enhanced chemical reactivity of ultrathin MgO(100) films deposited on Mo(100) substrate that causes water dissociation. We reveal that the ability to split water on insulating surface closely depends on the lattice mismatch between ultrathin films and the underlying substrate, and substrate-induced in-plane tensile strain dramatically results in water dissociation on MgO(100). Three dissociative adsorption configurations of water with lower energy are predicted, and the structural transition going from molecular form to dissociative form is almost barrierless. Our results provide an effective avenue to achieve water dissociation at the single-molecule level and shed light on how to tune the chemical reactions of insulating surfaces by choosing the suitable substrates. PMID:26953105

  19. Study on machining deformation of the ultra-thin mirror

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Wang, Peng

    2016-10-01

    In shape processing of the ultra-thin mirror, deformation will be produced under cutting forces, which is a major cause of quality deterioration. An ultra-thin mirror with diameter-thickness ratio more than 10 is studied in this paper. Rigidity characteristic of the grinding process by diamond wheel is analyzed by FEM. A receptance model of the micro-cutting process and the surface accuracy is established by a self-adaptive multi-scale method according the first strength method. And the effectiveness of the mathematical model is verified by experience. And the dynamic stiffness caused by grinding is optimized. As a result, deformation of the optical surface is reduced to 0.004λ and the acceptable surface accuracy can be achieved.

  20. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose.

    PubMed

    Yuen, Jonathan D; Walper, Scott A; Melde, Brian J; Daniele, Michael A; Stenger, David A

    2017-01-19

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L(-1).

  1. Ultrathin and lightweight organic solar cells with high flexibility

    PubMed Central

    Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2012-01-01

    Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

  2. EDMOS in ultrathin FDSOI: Impact of the drift region properties

    NASA Astrophysics Data System (ADS)

    Litty, Antoine; Ortolland, Sylvie; Golanski, Dominique; Dutto, Christian; Cristoloveanu, Sorin

    2016-11-01

    The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Drain MOSFET (EDMOS) directly integrated in the ultra-thin SOI film (7 nm) of the 28 nm FDSOI CMOS technology node. Thanks to TCAD simulations, we analyse in detail the device behaviour as a function of the doping level and length of the drift region. The influence of the back-plane doping type and of the back-biasing schemes is discussed. DC measurements of fabricated EDMOS samples reveal promising performances in particular in terms of specific on-resistance versus breakdown voltage trade-off. The experimental results indicate that, even in an ultrathin film, the engineering of the drift region could be a lever to obtain integrated HVMOS (3.3-5 V).

  3. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

    PubMed Central

    Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

    2017-01-01

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L−1. PMID:28102316

  4. Ultrathin zoom lens system based on liquid lenses

    NASA Astrophysics Data System (ADS)

    Li, Lei; Liu, Chao; Wang, Qiong-Hua

    2015-07-01

    In this paper, we propose an ultrathin zoom lens system based on liquid lenses. The proposed system consists of an annular folded lens and three electrowetting liquid lenses. The annular folded lens has several concentric surfaces. The annular folded lens is used to get the main power and correct aberrations. The three liquid lenses are used to change the focal length and correct aberration. An analysis of the proposed system is presented along with the design, fabrication, and testing of a prototype. All the elements in the proposed system are very thin, so the system is an ultrathin zoom lens system, which has potential application as lightweight, thin, high-quality imagers for aerospace, consumer, and military applications.

  5. Ultrathin flexible memory devices based on organic ferroelectric transistors

    NASA Astrophysics Data System (ADS)

    Sugano, Ryo; Hirai, Yoshinori; Tashiro, Tomoya; Sekine, Tomohito; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    Here, we demonstrate ultrathin, flexible nonvolatile memory devices with excellent durability under compressive strain. Ferroelectric-gate field-effect transistors (FeFETs) employing organic semiconductor and polymer ferroelectric layers are fabricated on a 1-µm-thick plastic film substrate. The FeFETs are characterized by measuring their transfer characteristics, programming time, and data retention time. The data retention time is almost unchanged even when a 50% compressive strain is applied to the devices. To clarify the origin of the excellent durability of the devices against compressive strain, an intermediate plane is calculated. From the calculation result, the intermediate plane is placed close to the channel region of the FeFETs. The high flexibility of the ferroelectric polymer and ultrathin device structure contributes to achieving a bending radius of 0.8 µm without the degradation of memory characteristics.

  6. Low temperature CVD growth of ultrathin carbon films

    NASA Astrophysics Data System (ADS)

    Yang, Chao; Wu, Peng; Gan, Wei; Habib, Muhammad; Xu, Weiyu; Fang, Qi; Song, Li

    2016-05-01

    We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC) used in several device processing technologies.

  7. Magnetoelectric transport and quantum interference effect in ultrathin manganite films

    SciTech Connect

    Wang, Cong; Jin, Kui-juan Gu, Lin; Lu, Hui-bin; Li, Shan-ming; Zhou, Wen-jia; Zhao, Rui-qiang; Guo, Hai-zhong; He, Meng; Yang, Guo-zhen

    2014-04-21

    The magnetoelectric transport behavior with respect to the thicknesses of ultrathin La{sub 0.9}Sr{sub 0.1}MnO{sub 3} films is investigated in detail. The metal-insulator phase transition, which has never been observed in bulk La{sub 0.9}Sr{sub 0.1}MnO{sub 3}, is found in ultrathin films with thicknesses larger than 6 unit cells. Low-temperature resistivity minima appeared in films with thicknesses less than 10 unit cells. This is attributed to the presence of quantum interference effects. These data suggest that the influence of the weak localization becomes much pronounced as the film thickness decreases from 16 to 8 unit cells.

  8. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

    NASA Astrophysics Data System (ADS)

    Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

    2017-01-01

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L‑1.

  9. Giant room-temperature elastocaloric effect in ferroelectric ultrathin films.

    PubMed

    Liu, Yang; Infante, Ingrid C; Lou, Xiaojie; Bellaiche, Laurent; Scott, James F; Dkhil, Brahim

    2014-09-17

    Environmentally friendly ultrathin BaTiO3 capacitors can exhibit a giant stress-induced elastocaloric effect without hysteresis loss or Joule heating. By combining this novel elastocaloric effect with the intrinsic electrocaloric effect, an ideal refrigeration cycle with high performance (temperature change over 10 K with a wide working-temperature window of 60 K) at room temperature is proposed for future cooling applications.

  10. Threshold for superconductivity in ultrathin amorphous gallium films

    SciTech Connect

    Jaeger, H.M.; Haviland, D.B.; Goldman, A.M.; Orr, B.G.

    1986-10-01

    Systematic studies of the onset of superconductivity in ultrathin amorphous Ga films have revealed the existence of a threshold dependent only on the normal-state sheet resistance. Global superconductivity, or zero resistance, develops only when the normal-state sheet resistance falls below 6000 ..cap omega../D'Alembertian. This result agrees with previous observations on crystalline Sn films and further supports the notion of a universal resistance threshold.

  11. Dielectric loss in microstrip lines

    NASA Technical Reports Server (NTRS)

    Simpson, T. L.; Tseng, B.

    1976-01-01

    A technique is presented for calculating dielectric loss in microstrip lines. Numerical results for several different substrates are included. These are compared with other available results and experimental data.

  12. Dielectric inspection of erythrocyte morphology

    NASA Astrophysics Data System (ADS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-05-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  13. Thermal characterization and modeling of ultra-thin silicon chips

    NASA Astrophysics Data System (ADS)

    Alshahed, Muhammad; Yu, Zili; Rempp, Horst; Richter, Harald; Harendt, Christine; Burghartz, Joachim N.

    2015-11-01

    Manufacturing ultra-thin chip is an emerging field in semiconductor technology that is driven by 3-D integrated circuits and flexible electronics. Unlike bulk silicon (Si) chips with thickness greater than 400 μm, the thermal management of ultra-thin Si chips with thickness smaller than 20 μm is challenging due to the increased lateral thermal resistance implying stringent cooling requirements. Therefore, a reasonable prediction of temperature gradients in such chips is necessary. In this work, a thermal chip is implemented in an ultra-thin 0.5 μm CMOS technology to be employed in surface steady-state and transient temperature measurement. Test chips are either packaged in a Pin Grid Array (PGA) ceramic package or attached to a flexible polyimide substrate. The experimental results show an on-chip temperature gradient of ∼15 °C for a dissipated power of 0.4 W in the case of the PGA package and ∼30 °C for the polyimide substrate. The time constants are ∼50 s and ∼1 s for the PGA and the polyimide packages respectively. The measurements are complemented by FEM simulations using ANSYS 14.5 workbench and spice simulations using an equivalent lumped-component thermal circuit model. The lumped-element thermal circuit model is then used for the surface temperature prediction, which is compared to measurement results.

  14. Magnetism and surface structure of atomically controlled ultrathin metal films.

    SciTech Connect

    Shiratsuchi, Yu.; Yamamoto, M.; Bader, S. D.; Materials Science Division; Osaka Univ.

    2007-01-01

    We review the correlation of magnetism and surface structure in ultrathin metal films, including the tailoring of novel magnetic properties using atomic scale control of the nanostructure. We provide an overview of modern fabrication and characterization techniques used to create and explore these fascinating materials, and highlight important phenomena of interest. We also discuss techniques that control and characterize both the magnetic and structural properties on an atomic scale. Recent advances in the development and applications of these techniques allow nanomagnetism to be investigated in an unprecedented manner. A system cannot necessarily retain a two-dimensional structure as it enters the ultrathin region, but it can transform into a three-dimensional, discontinuous structure due to the Volmer-Weber growth mechanism. This structural transformation can give rise to superparamagnetism. During this evolution, competing factors such as interparticle interactions and the effective magnetic anisotropy govern the magnetic state. These magnetic parameters are influenced by the nanostructure of the film. In particular, controlling the magnetic anisotropy is critical for determining the magnetic properties. Surface effects play especially important roles in influencing both the magnitude and direction of the magnetic anisotropy in ultrathin films. By properly altering the surface structure, the strength and direction of the magnetic anisotropy are controlled via spin-orbit and/or dipole interactions.

  15. Mechanically Tunable Hollow Silica Ultrathin Nanoshells for Ultrasound Contrast Agents

    PubMed Central

    Liberman, A.; Wang, J.; Lu, N.; Viveros, R.D.; Allen, C. A.; Mattrey, R.F.; Blair, S.L.; Trogler, W.C.; Kim, M. J.; Kummel, A.C.

    2015-01-01

    Perfluoropentane (PFP) gas filled biodegradable iron-doped silica nanoshells have been demonstrated as long-lived ultrasound contrast agents. Nanoshells are synthesized by a sol-gel process with tetramethyl orthosilicate (TMOS) and iron ethoxide. Substituting a fraction of the TMOS with R-substituted trialkoxysilanes produces ultrathin nanoshells with varying shell thicknesses and morphologies composed of fused nanoflakes. The ultrathin nanoshells had continuous ultrasound Doppler imaging lifetimes exceeding 3 hours, were twice as bright using contrast specific imaging, and had decreased pressure thresholds compared to control nanoshells synthesized with just TMOS. Transmission electron microscopy (TEM) showed that the R-group substituted trialkoxysilanes could reduce the mechanically critical nanoshell layer to 1.4 nm. These ultrathin nanoshells have the mechanical behavior of weakly linked nanoflakes but the chemical stability of silica. The synthesis can be adapted for general fabrication of three-dimensional nanostructures composed of nanoflakes, which have thicknesses from 1.4–3.8 nm and diameters from 2–23 nm. PMID:26955300

  16. Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

    SciTech Connect

    Peer, Akshit; Biswas, Rana

    2016-02-01

    In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller than the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.

  17. Ultrathin Free-Standing Bombyx mori Silk Nanofibril Membranes.

    PubMed

    Ling, Shengjie; Jin, Kai; Kaplan, David L; Buehler, Markus J

    2016-06-08

    We report a new ultrathin filtration membrane prepared from silk nanofibrils (SNFs), directly exfoliated from natural Bombyx mori silk fibers to retain structure and physical properties. These membranes can be prepared with a thickness down to 40 nm with a narrow distribution of pore sizes ranging from 8 to 12 nm. Typically, 40 nm thick membranes prepared from SNFs have pure water fluxes of 13 000 L h(-1) m(-2) bar(-1), more than 1000 times higher than most commercial ultrathin filtration membranes and comparable with the highest water flux reported previously. The commercial membranes are commonly prepared from polysulfone, poly(ether sulfone), and polyamide. The SNF-based ultrathin membranes exhibit efficient separation for dyes, proteins, and colloids of nanoparticles with at least a 64% rejection of Rhodamine B. This broad-spectrum filtration membrane would have potential utility in applications such as wastewater treatment, nanotechnology, food industry, and life sciences in part due to the protein-based membrane polymer (silk), combined with the robust mechanical and separation performance features.

  18. Mechanically Tunable Hollow Silica Ultrathin Nanoshells for Ultrasound Contrast Agents.

    PubMed

    Liberman, A; Wang, J; Lu, N; Viveros, R D; Allen, C A; Mattrey, R F; Blair, S L; Trogler, W C; Kim, M J; Kummel, A C

    2015-07-08

    Perfluoropentane (PFP) gas filled biodegradable iron-doped silica nanoshells have been demonstrated as long-lived ultrasound contrast agents. Nanoshells are synthesized by a sol-gel process with tetramethyl orthosilicate (TMOS) and iron ethoxide. Substituting a fraction of the TMOS with R-substituted trialkoxysilanes produces ultrathin nanoshells with varying shell thicknesses and morphologies composed of fused nanoflakes. The ultrathin nanoshells had continuous ultrasound Doppler imaging lifetimes exceeding 3 hours, were twice as bright using contrast specific imaging, and had decreased pressure thresholds compared to control nanoshells synthesized with just TMOS. Transmission electron microscopy (TEM) showed that the R-group substituted trialkoxysilanes could reduce the mechanically critical nanoshell layer to 1.4 nm. These ultrathin nanoshells have the mechanical behavior of weakly linked nanoflakes but the chemical stability of silica. The synthesis can be adapted for general fabrication of three-dimensional nanostructures composed of nanoflakes, which have thicknesses from 1.4-3.8 nm and diameters from 2-23 nm.

  19. Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

    DOE PAGES

    Peer, Akshit; Biswas, Rana

    2016-02-01

    In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller thanmore » the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.« less

  20. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    NASA Technical Reports Server (NTRS)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.