Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions

NASA Astrophysics Data System (ADS)

Jia, Xingtao; Tang, Huimin; Wang, Shizhuo; Qin, Minghui

2017-02-01

We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions based on first-principles scattering theory. MR as large as ˜100 % is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10-1mV and current density of order 105Acm-2 can switches a junction of three-layer MgO, they are about one order smaller than that in Fe |MgO |Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.

Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batabyal, R.; Abdul Wasey, A. H. M.; Mahato, J. C.

We report on our observation of negative differential resistance (NDR) in electron tunneling conductance in atomic-scale ultrathin Ag films on Si(111) substrates. NDR was observed by scanning tunneling spectroscopy measurements. The tunneling conductance depends on the electronic local density of states (LDOS) of the sample. We show that the sample bias voltage, at which negative differential resistance and peak negative conductance occur, depends on the film thickness. This can be understood from the variation in the LDOS of the Ag films as a function of film thickness down to the two-dimensional limit of one atomic layer. First principles density functionalmore » theory calculations have been used to explain the results.« less

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

NASA Astrophysics Data System (ADS)

Xin, Zheng; Ling, Zhi Peng; Nandakumar, Naomi; Kaur, Gurleen; Ke, Cangming; Liao, Baochen; Aberle, Armin G.; Stangl, Rolf

2017-08-01

The surface passivation performance of atomic layer deposited ultra-thin aluminium oxide layers with different thickness in the tunnel layer regime, i.e., ranging from one atomic cycle (∼0.13 nm) to 11 atomic cycles (∼1.5 nm) on n-type silicon wafers is studied. The effect of thickness and thermal activation on passivation performance is investigated with corona-voltage metrology to measure the interface defect density D it(E) and the total interface charge Q tot. Furthermore, the bonding configuration variation of the AlO x films under various post-deposition thermal activation conditions is analyzed by Fourier transform infrared spectroscopy. Additionally, poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) is used as capping layer on ultra-thin AlO x tunneling layers to further reduce the surface recombination current density to values as low as 42 fA/cm2. This work is a useful reference for using ultra-thin ALD AlO x layers as tunnel layers in order to form hole selective passivated contacts for silicon solar cells.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

NASA Astrophysics Data System (ADS)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Tunnel magnetoresistance in ultrathin L10 MnGa/MgO perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Suzuki, K. Z.; Miura, Y.; Ranjbar, R.; Sugihara, A.; Mizukami, S.

2018-06-01

L10 MnGa is one of the interesting magnetic alloys for spin-transfer-torque based applications because such alloys have high perpendicular magnetic anisotropy, small magnetization, and low Gilbert damping. Magnetic tunnel junctions (MTJs) with ultrathin MnGa electrodes have recently been demonstrated using the room temperature growth technique of MnGa on paramagnetic B2-ordered CoGa templates, which exhibited a small TMR ratio of  ∼3%. To obtain a higher TMR ratio, we systematically investigated the annealing dependence of the TMR ratio with MTJs with 1–5 nm thick MnGa electrodes in this study. The TMR ratios were 2%–3% without annealing, which were the same as those reported previously, and the TMR ratios reached their maximum values of 6%–8% at an annealing temperature of approximately 250 °C for the MTJs with 2–5 nm MnGa electrodes. The TMR ratio increased to approximately 25% at 10 K for those MTJs. These TMR ratios were slightly higher than those reported in MTJs with 30 nm-thick MnGa electrodes. The annealing temperature at which TMR showed the maximum value tended to decrease with decreasing MnGa thickness, and this low annealing endurance may be attributed to the atomic mixing between MnGa and barrier/buffer layers. The TMR ratio was discussed in terms of both coherent tunneling based on first principles calculations with different element terminations at the interface and incoherent tunneling.

Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Oliver, Bryan; Tuttle, Gary; He, Qing; Tang, Xuefei; Nowak, Janusz

2004-02-01

Two breakdown mechanisms are observed in magnetic tunnel junctions having an ultrathin alumina barrier. The two breakdown mechanisms manifest themselves differently when considering large ensembles of nominally identical devices under different stress conditions. The results suggest that one type of breakdown occurs because of the intrinsic breakdown of a well-formed oxide barrier that can be described by the E model of dielectric breakdown. The other is an extrinsic breakdown related to defects in the barrier rather than the failure of the oxide integrity. The characteristic of extrinsic breakdown suggests that a pre-existing pinhole in the barriers grows in area by means of dissipative (Joule) heating and/or an electric field across the pinhole circumference.

Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

PubMed Central

Bean, Jonathan J.; Saito, Mitsuhiro; Fukami, Shunsuke; Sato, Hideo; Ikeda, Shoji; Ohno, Hideo; Ikuhara, Yuichi; McKenna, Keith P.

2017-01-01

Polycrystalline metal oxides find diverse applications in areas such as nanoelectronics, photovoltaics and catalysis. Although grain boundary defects are ubiquitous their structure and electronic properties are very poorly understood since it is extremely challenging to probe the structure of buried interfaces directly. In this paper we combine novel plan-view high-resolution transmission electron microscopy and first principles calculations to provide atomic level understanding of the structure and properties of grain boundaries in the barrier layer of a magnetic tunnel junction. We show that the highly [001] textured MgO films contain numerous tilt grain boundaries. First principles calculations reveal how these grain boundaries are associated with locally reduced band gaps (by up to 3 eV). Using a simple model we show how shunting a proportion of the tunnelling current through grain boundaries imposes limits on the maximum magnetoresistance that can be achieved in devices. PMID:28374755

Bias Dependence of the Electrical Spin Injection into GaAs from Co -Fe -B /MgO Injectors with Different MgO Growth Processes

NASA Astrophysics Data System (ADS)

Barate, P.; Liang, S. H.; Zhang, T. T.; Frougier, J.; Xu, B.; Schieffer, P.; Vidal, M.; Jaffrès, H.; Lépine, B.; Tricot, S.; Cadiz, F.; Garandel, T.; George, J. M.; Amand, T.; Devaux, X.; Hehn, M.; Mangin, S.; Tao, B.; Han, X. F.; Wang, Z. G.; Marie, X.; Lu, Y.; Renucci, P.

2017-11-01

We investigate the influence of the MgO growth process on the bias dependence of the electrical spin injection from a Co -Fe -B /MgO spin injector into a GaAs-based light-emitting diode (spin LED). With this aim, textured MgO tunnel barriers are fabricated either by sputtering or molecular-beam-epitaxy (MBE) methods. For the given growth parameters used for the two techniques, we observe that the circular polarization of the electroluminescence emitted by spin LEDs is rather stable as a function of the injected current or applied bias for the samples with sputtered tunnel barriers, whereas the corresponding circular polarization decreases abruptly for tunnel barriers grown by MBE. We attribute these different behaviors to the different kinetic energies of the injected carriers linked to differing amplitudes of the parasitic hole current flowing from GaAs to Co-Fe-B in both cases.

Characterization of MgO Based Tunnel Barriers in Graphene Based Spin Valve Devices

NASA Astrophysics Data System (ADS)

Avsar, Ahmet; Balakrishnan, Jayakumar; Koon, Gavin; Ho, Yuda; Patra, Ajit; Bae, Sukang; Hong, Byung-Hee; Özyilmaz, Barbaros

2012-02-01

The low spin orbit coupling and hyperfine interaction in graphene allows a high spin relaxation length even at room temperature [1]. The demonstration of comparable spin transport properties in CVD synthesized single layer and bilayer graphene with its exfoliated counterparts raised hopes for the realization of possible room temperature spintronic applications [2]. To improve the spin transport properties of CVD Graphene based spin valves further, contact induced spin relaxation should be reduced by creating pin-hole free tunneling barriers. In this presentation, we will compare MgO barriers deposited under different conditions towards establishing pin-hole free barriers. We will discuss the effect of the substrate smoothness on the formation of high quality tunnel barriers by studying growth on different substrates. [4pt] [1] N. Tombros, C. Jozsa, M. Popinciuc, H. T. Jonkman, and B. J. van Wees, Nature 448, 571-574 (2007) [0pt] [2] A. Avsar, T. Yang, S. Bae, J. Balakrishnan, F. Volmer, M. Jaiswal, Z. Yi, S. R. Ali, G. Guntherodt, B. H. Hong, B. Beschoten, B. Ozyilmaz, Nano Lett. 10.10.1021/nl200714q (2011)

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

PubMed Central

Li, D. L.; Ma, Q. L.; Wang, S. G.; Ward, R. C. C.; Hesjedal, T.; Zhang, X.-G.; Kohn, A.; Amsellem, E.; Yang, G.; Liu, J. L.; Jiang, J.; Wei, H. X.; Han, X. F.

2014-01-01

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices. PMID:25451163

Giant thermal spin torque assisted magnetic tunnel junction switching

NASA Astrophysics Data System (ADS)

Pushp, Aakash

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin-currents from temperature gradients, and their associated thermal-spin-torques (TSTs) have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge-currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe. Reference: A. Pushp*, T. Phung*, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin, 112, 6585-6590 (2015).

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO.

PubMed

Schleicher, F; Halisdemir, U; Lacour, D; Gallart, M; Boukari, S; Schmerber, G; Davesne, V; Panissod, P; Halley, D; Majjad, H; Henry, Y; Leconte, B; Boulard, A; Spor, D; Beyer, N; Kieber, C; Sternitzky, E; Cregut, O; Ziegler, M; Montaigne, F; Beaurepaire, E; Gilliot, P; Hehn, M; Bowen, M

2014-08-04

Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

NASA Astrophysics Data System (ADS)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

DOE PAGES

Li, D. L.; Ma, Q. L.; Wang, S. G.; ...

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. In this paper, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δmore » 1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. Finally, in this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.« less

Tuning the ultrafast photodissociation dynamics of CH3Br on ultrathin MgO films by reducing the layer thickness to the 2D limit

NASA Astrophysics Data System (ADS)

Vaida, Mihai E.; Bernhardt, Thorsten M.

2017-11-01

The femtosecond-laser induced photodissociation of CH3Br adsorbed at sub-monolayer coverage on a solid surface was investigated by time-resolved pump-probe mass spectrometry. To tune the interaction of the CH3Br molecules with the substrate, an Mo(1 0 0) surface was covered with ultrathin insulating MgO layers of variable thickness. By gradually decreasing the magnesia layer thickness to the 2D limit the photodissociation dynamics observed by detection of the methyl fragment indicates an energetic lowering of the relevant methyl bromide excited states due to the increasing spatial proximity of the metallic support. Potential orientational effects of the methyl bromide adsorption geometry are also considered.

Disturbance of tunneling coherence by oxygen vacancy in epitaxial Fe/MgO/Fe magnetic tunnel junctions.

PubMed

Miao, G X; Park, Y J; Moodera, J S; Seibt, M; Eilers, G; Münzenberg, M

2008-06-20

Oxygen vacancies in the MgO barriers of epitaxial Fe/MgO/Fe magnetic tunnel junctions are observed to introduce symmetry-breaking scatterings and hence open up channels for noncoherent tunneling processes that follow the normal WKB approximation. The evanescent waves inside the MgO barrier thus experience two-step tunneling, the coherent followed by the noncoherent process, and lead to lower tunnel magnetoresistance, higher junction resistance, as well as increased bias and temperature dependence. The characteristic length of the symmetry scattering process is determined to be about 1.6 nm.

Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory

NASA Astrophysics Data System (ADS)

Sun, Jonathan Z.

2016-10-01

Spin-transfer torque (or spin-torque, or STT) based magnetic tunnel junction (MTJ) is at the heart of a new generation of magnetism-based solid-state memory, the so-called spin-transfer-torque magnetic random access memory, or STT-MRAM. Over the past decades, STT-based switchable magnetic tunnel junction has seen progress on many fronts, including the discovery of (001) MgO as the most favored tunnel barrier, which together with (bcc) Fe or FeCo alloy are yielding best demonstrated tunnel magneto-resistance (TMR); the development of perpendicularly magnetized ultrathin CoFeB-type of thin films sufficient to support high density memories with junction sizes demonstrated down to 11nm in diameter; and record-low spin-torque switching threshold current, giving best reported switching efficiency over 5 kBT/μA. Here we review the basic device properties focusing on the perpendicularly magnetized MTJs, both in terms of switching efficiency as measured by sub-threshold, quasi-static methods, and of switching speed at super-threshold, forced switching. We focus on device behaviors important for memory applications that are rooted in fundamental device physics, which highlights the trade-off of device parameters for best suitable system integration.

Ultrahigh Tunneling-Magnetoresistance Ratios in Nitride-Based Perpendicular Magnetic Tunnel Junctions from First Principles

NASA Astrophysics Data System (ADS)

Yang, Baishun; Tao, Lingling; Jiang, Leina; Chen, Weizhao; Tang, Ping; Yan, Yu; Han, Xiufeng

2018-05-01

We report a first-principles study of electronic structures, magnetic properties, and the tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M4N (M =Fe , Co, Ni)-based magnetic tunnel junctions (MTJs). It is found that bulk Fe4 N reveals a half-metal nature in terms of the Δ1 state. A perpendicular magnetic anisotropy is observed in the periodic system Fe4 N /MgO . In particular, the ultrahigh TMR ratio of over 24 000% is predicted in the Fe4 N /MgO /Fe4N MTJ due to the interface resonance tunneling and relatively high transmission for states of other symmetry. Besides, the large TMR can be maintained with the change of atomic details at the interface, such as the order-disorder interface, the change of thickness of the MgO barrier, and different in-plane lattice constants of the MTJ. The physical origin of the TMR effect can be well understood by analyzing the band structure and transmission channel of bulk Fe4 N as well as the transmission in momentum space of Fe4 N /MgO /Fe4N . Our results suggest that the Fe4 N /MgO /Fe4N MTJ is a benefit for spintronic applications.

Predicition and Discovery of High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Crystalline Barriers

NASA Astrophysics Data System (ADS)

Butler, William

2005-03-01

Tunneling magnetoresistance in excess of 200% has recently been observed in magnetic tunnel junctions using bcc Fe or bcc CoFe electrodes with crystalline MgO tunnel barriers[1,2]. These results demonstrate that tunneling magnetoresistance depends on more than the ``electrode polarization''. This talk will describe the calculations that predicted high TMR in these and other systems[3,4,5]. These calculations helped us to understand certain principles that may lead to high TMR through coherent electron tunneling. They can be briefly summarized as follows: (1) If the symmetry of a Bloch state can be preserved as electrons cross the interfaces between the electrode and the tunnel barrier, this be used to advantage for spin filtering. (2) Evanescent states of different symmetries decay at different rates in the barrier. (3) Interfacial bonding can be very important in determining the probability that an electron can traverse the interface. (4) Electrons of disallowed symmetry cannot propagate in an electrode. Once these simple principles are understood, simple band codes can be used to screen and to develop heterostructures with the proper symmetries to obtain high TMR. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant AND S.-H. Yang, ``Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers,'' Nature Materials, Advance Online Publication [2] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, ``Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions,'' Nature Materials, Advance Online Publication [3] W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, ``Spin-dependent tunneling conductance of Fe | MgO | Fe sandwiches'' Phys. Rev. B 63, 054416 (2001) [4] J. Mathon, A. Umerski, ``Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction,'' Phys. Rev. B 63, 220403(R) (2001). [5] X.-G. Zhang, and W. H. Butler, ``Large magnetoresistance in

Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

PubMed

Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

2016-12-01

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

NASA Astrophysics Data System (ADS)

Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

2017-12-01

Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V-1·s-1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal-MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

Investigations of Topological Surface States in Sb (111) Ultrathin Films by STM/STS Experiments and DFT Calculations

NASA Astrophysics Data System (ADS)

Luo, Ziyu; Yao, Guanggeng; Xu, Wentao; Feng, Yuanping; Wang, Xue-Sen

2014-03-01

Bulk Sb was regarded as a semimetal with a nontrivial topological order. It is worth exploring whether the Sb ultrathin film has the potential to be an elementary topological insulator. In the presence of quantum confinement effect, we investigated the evolution of topological surface states in Sb (111) ultrathin films with different thickness by the scanning tunneling microscopy/ spectroscopy (STM/STS) experiments and density functional theory (DFT) calculations. By comparing the quasiparticle interference (QPI) patterns obtained from Fourier-transform scanning tunneling spectroscopy (FT-STS) and from DFT calculations, we successfully derive the spin properties of topological surface states on Sb (111) ultrathin films. In addition, based on the DFT calculations, the 8BL Sb (111) ultrathin film was proved to possess up to 30% spinseparated topological surface states within the bandgap. Therefore, the highquality 8BL Sb (111) ultrathin film could be regarded as an elementary topological insulator.

CH3Br adsorption on MgO/Mo ultrathin films: A DFT study

NASA Astrophysics Data System (ADS)

Cipriano, Luis A.; Tosoni, Sergio; Pacchioni, Gianfranco

2018-06-01

The adsorption of methyl bromide on MgO ultrathin films supported on Mo(100) was studied by means of density functional theory calculations, in comparison to the MgO(100) and Mo(100) surfaces. The adsorption energy and geometry were shown to depend on the thickness of the supported oxide film. MgO films as thick as 2ML (or more) display adsorptive properties similar to MgO(100), i.e. the adsorption of CH3Br is mostly due to dispersion and the molecule lies in a tilted geometry almost parallel to the surface. The CH3Br HOMO-LUMO gap is almost unaltered with respect to the gas phase. On metallic Mo(100) surfaces the bonding is completely different with the CH3Br molecule strongly bound and the C-Br bond axis almost vertical with respect to the metal surface. The MgO monolayer supported on Mo exhibits somehow intermediate properties: the tilt angle is larger and the bonding is stronger than on MgO(100), due to the effect of the supporting metal. In this case, a small reduction of the HOMO-LUMO gap of the adsorbed molecule is reported. The results help to rationalize the observed behavior in photodissociation of CH3Br supported on different substrates.

Tunneling spectra and superconducting gaps observed by scanning tunneling microscopy near the grain boundaries of FeSe0.3Te0.7 films

NASA Astrophysics Data System (ADS)

Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

2013-12-01

We used scanning tunneling microscopy (STM) to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of the ab-planes and a connection ramp between them. We discovered that by pulsed laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on an Ar-ion-milled magnesium oxide (MgO) substrate were rotated 45° with respect to those of MgO, whereas the a- and b-axis of the film grown on a pristine MgO substrate were parallel to those of MgO. With photolithography and this technique, we can prepare FeSe0.3Te0.7 films with two orientations on the same MgO substrate so that the connection between them forms a ramp at an angle of about 25° to the substrate plane. In the planar region, for either the 0° or 45° orientation, we observed tunneling spectra with a superconducting gap of about 5 meV and 1.78 meV, respectively. However, a much larger gap at about 18 meV was observed in the ramp region. Furthermore, we observed a small zero-bias conductance peak (ZBCP) inside the large gap at T = 4.3 K. The ZBCP becomes smaller with increasing temperature and disappeared at temperature above 7 K.

Cap-Induced Magnetic Anisotropy in Ultra-thin Fe/MgO(001) Films

NASA Astrophysics Data System (ADS)

Brown-Heft, Tobias; Pendharkar, Mihir; Lee, Elizabeth; Palmstrom, Chris

Magnetic anisotropy plays an important role in the design of spintronic devices. Perpendicular magnetic anisotropy (PMA) is preferred for magnetic tunnel junctions because the resulting energy barrier between magnetization states can be very high and this allows enhanced device scalability suitable for magnetic random access memory applications. Interface induced anisotropy is often used to control magnetic easy axes. For example, the Fe/MgO(001) system has been predicted to exhibit PMA in the ultrathin Fe limit. We have used in-situ magneto optic Kerr effect and ex-situ SQUID to study the changes in anisotropy constants between bare Fe/MgO(001) films and those capped with MgO, Pt, and Ta. In some cases in-plane anisotropy terms reverse sign after capping. We also observe transitions from superparamagnetic to ferromagnetic behavior induced by capping layers. Perpendicular anisotropy is observed for Pt/Fe/MgO(001) films after annealing to 300°C. These effects are characterized and incorporated into a magnetic simulation that accurately reproduces the behavior of the films. This work was supported in part by the Semiconductor Research Corporation programs (1) MSR-Intel, and (2) C-SPIN.

230% room-temperature magnetoresistance in CoFeB /MgO/CoFeB magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Djayaprawira, David D.; Tsunekawa, Koji; Nagai, Motonobu; Maehara, Hiroki; Yamagata, Shinji; Watanabe, Naoki; Yuasa, Shinji; Suzuki, Yoshishige; Ando, Koji

2005-02-01

Magnetoresistance (MR) ratio up to 230% at room temperature (294% at 20 K) has been observed in spin-valve-type magnetic tunnel junctions (MTJs) using MgO tunnel barrier layer fabricated on thermally oxidized Si substrates. We found that such a high MR ratio can be obtained when the MgO barrier layer was sandwiched with amorphous CoFeB ferromagnetic electrodes. Microstructure analysis revealed that the MgO layer with (001) fiber texture was realized when the MgO layer was grown on amorphous CoFeB rather than on polycrystalline CoFe. Since there have been no theoretical studies on the MTJs with a crystalline tunnel barrier and amorphous electrodes, the detailed mechanism of the huge tunneling MR effect observed in this study is not clear at the present stage. Nevertheless, the present work is of paramount importance in realizing high-density magnetoresistive random access memory and read head for ultra high-density hard-disk drives into practical use.

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

NASA Astrophysics Data System (ADS)

Zhang, Jia; Chen, X. Z.; Song, C.; Feng, J. F.; Wei, H. X.; Lü, Jing-Tao

2018-04-01

The magnetic phase-transition tunnel-magnetoresistance (MPT-TMR) effect with a single magnetic electrode is investigated by first-principles calculations. The calculations show that the MPT-TMR of an α'-FeRh /MgO /Cu tunnel junction can be as high as hundreds of percent when the magnetic structure of α'-FeRh changes from G -type antiferromagnetic (G -AFM ) to ferromagnetic order. This type of MPT-TMR may be superior to the tunnel anisotropic magnetoresistance because of its huge magnetoresistance effect and similar structural simplicity. The main mechanism for the giant MPT-TMR can be attributed to the formation of interface resonant states at the G -AFM FeRh /MgO interface. A direct FeRh /MgO interface is found to be necessary for achieving a high MPT-TMR experimentally. Moreover, we find the α'-FeRh /MgO interface with FeRh in the ferromagnetic phase has nearly full spin polarization due to the negligible majority transmission and significantly different Fermi surface of two spin channels. Thus, it may act as a highly efficient and tunable spin injector. In addition, the electric-field-driven MPT of FeRh-based heteromagnetic nanostructures can be utilized to design various energy-efficient tunnel-junction structures and the corresponding lower-power-consumption devices. We also discuss the consequence of various junction defects on MPT-TMR. The interface oxygen layer is found to be detrimental to MPT-TMR. The sign of MPT-TMR is reversed with Rh termination due to the lack of contribution from the interface resonance states. However, the MPT-TMR may be robust against the oxygen vacancy inside of MgO and the shift of the Fermi energy. Our results will stimulate further experimental investigations of MPT-TMR and other fascinating phenomenon of FeRh-based tunnel junctions that may be promising in antiferromagnetic spintronics.

Al embedded MgO barrier MTJ: A first principle study for application in fast and compact STT-MRAMs

NASA Astrophysics Data System (ADS)

Yadav, Manoj Kumar; Gupta, Santosh Kumar; Rai, Sanjeev; Pandey, Avinash C.

2017-03-01

The first principle comparative study of a novel single Al sheet embedded MgO and pure MgO barrier having Fe electrodes magnetic tunnel junction has been presented. Al embedded MgO is reported to provide enhanced spin polarised tunnelling current due to increase of spin-polarized density of states at Fermi energy in the barrier region. This novel MTJ provides a current density and resistance area (RA) product of 94.497 ×107 A / cm2 and 0.105  Ω - μm2 respectively. With such a low RA product; it allows higher deriving current due to which switching time of magnetization reversal reduces without inducing barrier related breakdowns in non-volatile magnetic random access memories. The low RA product and high current density of the proposed MTJ may have possible applications in integration with existing MOS circuits.

Characterization of Magnetic Tunnel Junctions by IETS and STS

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo; Yang, See-Hun

2005-03-01

Inelastic electron tunneling spectroscopy (IETS) and superconducting tunneling spectroscopy (STS) have been employed to investigate spin-dependent tunneling in magnetic tunnel junctions (MTJs). MTJs were studied in which the ferromagnetic electrodes were formed from the 3d transition metals, Fe, Co and Ni and their alloys, and the tunnel barriers were formed from various nitrides and oxides including MgO. MTJs with MgO barriers exhibit more than 220% tunneling magnetoresistance (TMR) at room temperature[1]. IETS was used to measure the contributions of defects and impurities, as well as phonons and magnons, to the tunneling current. These processes give rise to conductance peaks at characteristic voltages according to their excitation energies. STS was used to measure the spin polarization of the tunneling current as well as to explore the role of spin-flip scattering in the tunneling process. The goal of this research is a more complete understanding of the mechanisms which gives rise to the bias voltage dependence of the TMR as well as indirect tunneling through states in the barrier. [1] S. S. P. Parkin, C. Kaiser, A. Panchula, P. Rice, B. Hughes, M. Samant, and S.-H. Yang, Nature Materials, vol. Published online: 31 October 2004, 2004.

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics.

PubMed

Cui, Qingsong; Sakhdari, Maryam; Chamlagain, Bhim; Chuang, Hsun-Jen; Liu, Yi; Cheng, Mark Ming-Cheng; Zhou, Zhixian; Chen, Pai-Yen

2016-12-21

We present a new and viable template-assisted thermal synthesis method for preparing amorphous ultrathin transition-metal oxides (TMOs) such as TiO 2 and Ta 2 O 5 , which are converted from crystalline two-dimensional (2D) transition-metal dichalcogenides (TMDs) down to a few atomic layers. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were used to characterize the chemical composition and bonding, surface morphology, and atomic structure of these ultrathin amorphous materials to validate the effectiveness of our synthesis approach. Furthermore, we have fabricated metal-insulator-metal (MIM) diodes using the TiO 2 and Ta 2 O 5 as ultrathin insulating layers with low potential barrier heights. Our MIM diodes show a clear transition from direct tunneling to Fowler-Nordheim tunneling, which was not observed in previously reported MIM diodes with TiO 2 or Ta 2 O 5 as the insulating layer. We attribute the improved performance of our MIM diodes to the excellent flatness and low pinhole/defect densities in our TMO insulting layers converted from 2D TMDs, which enable the low-threshold and controllable electron tunneling transport. We envision that it is possible to use the ultrathin TMOs converted from 2D TMDs as the insulating layer of a wide variety of metal-insulator and field-effect electronic devices for various applications ranging from microwave mixing, parametric conversion, infrared photodetection, emissive energy harvesting, to ultrafast electronic switching.

Probing specific oxides as potential supports for metal/oxide model catalysts: MgO(111) polar film

NASA Astrophysics Data System (ADS)

Grigorkina, G. S.; Ramonova, A. G.; Kibizov, D. D.; Kozyrev, E. N.; Zaalishvili, V. B.; Fukutani, K.; Magkoev, T. T.

2017-05-01

The growth of thermally evaporated magnesium oxide thin film on Mo(110) substrate in ultra-high vacuum was studied by means of Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and work function (WF) measurements. It is shown that at a growth rate of c.a. 0.1 monolayer per minute and the substrate temperature of 600 K the film acquires the MgO(111) structure. This structure begins to form at two monolayers and holds up to six monolayers. At higher thickness the film disorders due to weakening of the ordering effect of the isosymmetric Mo(110) support. Adsorption of CO and H2 on the formed MgO(111) film cooled down to 90 K was studied by means of ultraviolet photoelectron spectroscopy (UPS) and reflection absorption infrared spectroscopy (RAIRS) and compared with in-situ obtained results for CO on Pt(111). Comparison of UPS data of CO on MgO(111) and Pt(111) in combination with RAIRS results reveals quite different bonding mechanisms on the metal and the oxide supports. The main feature of CO on MgO(111) is quite high intensity of CO stretch vibration, considerably exceeding that on amorphous MgO, and comparable to that of CO on Pt(111). This is presumably due to the electrostatic effect of the uncompensated microscopic dipole moment of ultrathin MgO(111) film on the enhancing of CO dynamical dipole moment. Adsorption of H2 dramatically reduces the CO stretch intensity as a possible result of removing of dipole moment of MgO(111) surface by hydrogen and (CO+H2) interaction.

MgO Nanoparticle Modified Anode for Highly Efficient SnO2-Based Planar Perovskite Solar Cells.

PubMed

Ma, Junjie; Yang, Guang; Qin, Minchao; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Chen, Zhiliang; Guo, Yaxiong; Han, Hongwei; Zhao, Xingzhong; Fang, Guojia

2017-09-01

Reducing the energy loss and retarding the carrier recombination at the interface are crucial to improve the performance of the perovskite solar cell (PSCs). However, little is known about the recombination mechanism at the interface of anode and SnO 2 electron transfer layer (ETL). In this work, an ultrathin wide bandgap dielectric MgO nanolayer is incorporated between SnO 2 :F (FTO) electrode and SnO 2 ETL of planar PSCs, realizing enhanced electron transporting and hole blocking properties. With the use of this electrode modifier, a power conversion efficiency of 18.23% is demonstrated, an 11% increment compared with that without MgO modifier. These improvements are attributed to the better properties of MgO-modified FTO/SnO 2 as compared to FTO/SnO 2 , such as smoother surface, less FTO surface defects due to MgO passivation, and suppressed electron-hole recombinations. Also, MgO nanolayer with lower valance band minimum level played a better role in hole blocking. When FTO is replaced with Sn-doped In 2 O 3 (ITO), a higher power conversion efficiency of 18.82% is demonstrated. As a result, the device with the MgO hole-blocking layer exhibits a remarkable improvement of all J-V parameters. This work presents a new direction to improve the performance of the PSCs based on SnO 2 ETL by transparent conductive electrode surface modification.

Tunnel Magneto Resistance of Fe/Insulator/Fe

NASA Astrophysics Data System (ADS)

Aryee, Dennis; Seifu, Dereje

Tri-layer thin films of Fe/Insulator/Fe were synthesized using magnetron DC/ RF sputtering with MgO insulator and Bi2Te3 topological insulators as middle buffer layer. The multi-layered samples thus produced were studied using in-house built magneto-optic Kerr effect (MOKE) instrument, vibrating sample magnetometer (VSM), torque magnetometer (TMM), AFM, MFM, and magneto-resistance (MR). This system, that is Fe/Insulator/Fe on MgO(100) substrate, is a well-known tunnel magneto resistance (TMR) structure often used in magnetic tunnel junction (MTJ) devices. TMR effect is a method by which MTJs are used in developing magneto-resistive random access memory (MRAM), magnetic sensors, and novel logic devices. The main purpose behind this research is to measure the magnetic anisotropy of Fe/Insulator /Fe structure and correlate it to magneto-resistance. In this presentation, we will present results from MOKE, VSM, TMM, AFM, MFM, and MR studies of Fe/Insulator/Fe on MgO(100). We would like to acknowledge support by NSF-MRI-DMR-1337339.

High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications.

PubMed

Chen, Jun-Yang; Lau, Yong-Chang; Coey, J M D; Li, Mo; Wang, Jian-Ping

2017-02-02

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices' robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications.

High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

PubMed Central

Chen, Jun-Yang; Lau, Yong-Chang; Coey, J. M. D.; Li, Mo; Wang, Jian-Ping

2017-01-01

The magnetic tunnel junction (MTJ) using MgO barrier is one of most important building blocks for spintronic devices and has been widely utilized as miniaturized magentic sensors. It could play an important role in wearable medical devices if they can be fabricated on flexible substrates. The required stringent fabrication processes to obtain high quality MgO-barrier MTJs, however, limit its integration with flexible electronics devices. In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to plastic substrates. Remarkably, such flexible MTJs are fully functional, exhibiting a TMR ratio as high as 190% under bending radii as small as 5 mm. The devices‘ robustness is manifested by its retained excellent performance and unaltered TMR ratio after over 1000 bending cycles. The demonstrated flexible MgO-barrier MTJs opens the door to integrating high-performance spintronic devices in flexible and wearable electronics devices for a plethora of biomedical sensing applications. PMID:28150807

Enhanced magnetic moment in ultrathin Fe-doped CoFe2O4 films

NASA Astrophysics Data System (ADS)

Moyer, J. A.; Vaz, C. A. F.; Kumah, D. P.; Arena, D. A.; Henrich, V. E.

2012-11-01

The effect of film thickness on the magnetic properties of ultrathin Fe-doped cobalt ferrite (Co1-xFe2+xO4) grown on MgO (001) substrates is investigated by superconducting quantum interference device magnetometry and x-ray magnetic linear dichroism, while the distribution of the Co2+ cations between the octahedral and tetrahedral lattice sites is studied with x-ray absorption spectroscopy. For films thinner than 10 nm, there is a large enhancement of the magnetic moment; conversely, the remanent magnetization and coercive fields both decrease, while the magnetic spin axes of all the cations become less aligned with the [001] crystal direction. In particular, at 300 K the coercive fields of the thinnest films vanish. The spectroscopy data show that no changes occur in the cation distribution as a function of film thickness, ruling this out as the origin of the enhanced magnetic moment. However, the magnetic measurements all support the possibility that these ultrathin Fe-doped CoFe2O4 films are transitioning into a superparamagnetic state, as has been seen in ultrathin Fe3O4. A weakening of the magnetic interactions at the antiphase boundaries, leading to magnetically independent domains within the film, could explain the enhanced magnetic moment in ultrathin Fe-doped CoFe2O4 and the onset of superparamagnetism at room temperature.

Increased magnetic damping in ultrathin films of Co2FeAl with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Takahashi, Y. K.; Miura, Y.; Choi, R.; Ohkubo, T.; Wen, Z. C.; Ishioka, K.; Mandal, R.; Medapalli, R.; Sukegawa, H.; Mitani, S.; Fullerton, E. E.; Hono, K.

2017-06-01

We estimated the magnetic damping constant α of Co2FeAl (CFA) Heusler alloy films of different thicknesses with an MgO capping layer by means of time-resolved magneto-optical Kerr effect and ferromagnetic resonance measurements. CFA films with thicknesses of 1.2 nm and below exhibited perpendicular magnetic anisotropy arising from the presence of the interface with MgO. While α increased gradually with decreasing CFA film thickness down to 1.2 nm, it was increased substantially when the thickness was reduced further to 1.0 nm. Based on the microstructure analyses and first-principles calculations, we attributed the origin of the large α in the ultrathin CFA film primarily to the Al deficiency in the CFA layer, which caused an increase in the density of states and thereby in the scatterings of their spins.

Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films

PubMed Central

Wang, Xuewen; He, Xuexia; Zhu, Hongfei; Sun, Linfeng; Fu, Wei; Wang, Xingli; Hoong, Lai Chee; Wang, Hong; Zeng, Qingsheng; Zhao, Wu; Wei, Jun; Jin, Zhong; Shen, Zexiang; Liu, Jie; Zhang, Ting; Liu, Zheng

2016-01-01

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d33) up to 33 pm·V−1 was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices. PMID:27419234

Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films.

PubMed

Wang, Xuewen; He, Xuexia; Zhu, Hongfei; Sun, Linfeng; Fu, Wei; Wang, Xingli; Hoong, Lai Chee; Wang, Hong; Zeng, Qingsheng; Zhao, Wu; Wei, Jun; Jin, Zhong; Shen, Zexiang; Liu, Jie; Zhang, Ting; Liu, Zheng

2016-07-01

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d 33) up to 33 pm·V(-1) was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices.

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

NASA Astrophysics Data System (ADS)

Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

2017-08-01

Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr

For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2}more » pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.« less

On the persistence of polar domains in ultrathin ferroelectric capacitors.

PubMed

Zubko, Pavlo; Lu, Haidong; Bark, Chung-Wung; Martí, Xavi; Santiso, José; Eom, Chang-Beom; Catalan, Gustau; Gruverman, Alexei

2017-07-19

The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO 3 films sandwiched between the most habitual perovskite electrodes, SrRuO 3 , on top of the most used perovskite substrate, SrTiO 3 . We use a combination of piezoresponse force microscopy, dielectric measurements and structural characterization to provide conclusive evidence for the ferroelectric nature of the relaxed polarization state in ultrathin BaTiO 3 capacitors. We show that even the high screening efficiency of SrRuO 3 electrodes is still insufficient to stabilize polarization in SrRuO 3 /BaTiO 3 /SrRuO 3 heterostructures at room temperature. We identify the key role of domain wall motion in determining the macroscopic electrical properties of ultrathin capacitors and discuss their dielectric response in the light of the recent interest in negative capacitance behaviour.

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film.

PubMed

Sun, Hao-Hua; Wang, Mei-Xiao; Zhu, Fengfeng; Wang, Guan-Yong; Ma, Hai-Yang; Xu, Zhu-An; Liao, Qing; Lu, Yunhao; Gao, Chun-Lei; Li, Yao-Yi; Liu, Canhua; Qian, Dong; Guan, Dandan; Jia, Jin-Feng

2017-05-10

Ultrathin freestanding bismuth film is theoretically predicted to be one kind of two-dimensional topological insulators. Experimentally, the topological nature of bismuth strongly depends on the situations of the Bi films. Film thickness and interaction with the substrate often change the topological properties of Bi films. Using angle-resolved photoemission spectroscopy, scanning tunneling microscopy or spectroscopy and first-principle calculation, the properties of Bi(111) ultrathin film grown on the NbSe 2 superconducting substrate have been studied. We find the band structures of the ultrathin film is quasi-freestanding, and one-dimensional edge state exists on Bi(111) film as thin as three bilayers. Superconductivity is also detected on different layers of the film and the pairing potential exhibits an exponential decay with the layer thicknesses. Thus, the topological edge state can coexist with superconductivity, which makes the system a promising platform for exploring Majorana Fermions.

Tunable magnetic properties by interfacial manipulation of L1(0)-FePt perpendicular ultrathin film with island-like structures.

PubMed

Feng, C; Wang, S G; Yang, M Y; Zhang, E; Zhan, Q; Jiang, Y; Li, B H; Yu, G H

2012-02-01

Based on interfacial manipulation of the MgO single crystal substrate and non-magnetic AIN compound, a L1(0)-FePt perpendicular ultrathin film with the structure of MgO/FePt-AIN/Ta was designed, prepared, and investigated. The film is comprised of L1(0)-FePt "magnetic islands," which exhibits a perpendicular magnetic anisotropy (PMA), tunable coercivity (Hc), and interparticle exchange coupling (IEC). The MgO substrate promotes PMA of the film because of interfacial control of the FePt lattice orientation. The AIN compound is doped to increase the difference of surface energy between FePt layer and MgO substrate and to suppress the growth of FePt grains, which takes control of island growth mode of FePt atoms. The AIN compound also acts as isolator of L1(0)-FePt islands to pin the sites of FePt domains, resulting in the tunability of Hc and IEC of the films.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Charge Transfer and Orbital Level Alignment at Inorganic/Organic Interfaces: The Role of Dielectric Interlayers.

PubMed

Hollerer, Michael; Lüftner, Daniel; Hurdax, Philipp; Ules, Thomas; Soubatch, Serguei; Tautz, Frank Stefan; Koller, Georg; Puschnig, Peter; Sterrer, Martin; Ramsey, Michael G

2017-06-27

It is becoming accepted that ultrathin dielectric layers on metals are not merely passive decoupling layers, but can actively influence orbital energy level alignment and charge transfer at interfaces. As such, they can be important in applications ranging from catalysis to organic electronics. However, the details at the molecular level are still under debate. In this study, we present a comprehensive analysis of the phenomenon of charge transfer promoted by a dielectric interlayer with a comparative study of pentacene adsorbed on Ag(001) with and without an ultrathin MgO interlayer. Using scanning tunneling microscopy and photoemission tomography supported by density functional theory, we are able to identify the orbitals involved and quantify the degree of charge transfer in both cases. Fractional charge transfer occurs for pentacene adsorbed on Ag(001), while the presence of the ultrathin MgO interlayer promotes integer charge transfer with the lowest unoccupied molecular orbital transforming into a singly occupied and singly unoccupied state separated by a large gap around the Fermi energy. Our experimental approach allows a direct access to the individual factors governing the energy level alignment and charge-transfer processes for molecular adsorbates on inorganic substrates.

Room Temperature Ferroelectricity in Ultrathin SnTe Films

NASA Astrophysics Data System (ADS)

Chang, Kai; Liu, Junwei; Lin, Haicheng; Zhao, Kun; Zhong, Yong; Ji, Shuai-Hua; He, Ke; Wang, Lili; Ma, Xucun; Fu, Liang; Chen, Xi; Xue, Qi-Kun

2015-03-01

The ultrathin SnTe films with several unit cell thickness grown on graphitized SiC(0001) surface have been studied by the scanning tunneling microscopy and spectroscopy (STM/S). The domain structures, local lattice distortion and the electronic band bending at film edges induced by the in-plane spontaneous polarization along < 110 > have been revealed at atomic scale. The experiments at variant temperature show that the Curie temperature Tc of the one unit cell thick (two atomic layers) SnTe film is as high as 280K, much higher than that of the bulk counterpart (~100K) and the 2-4 unit cell thick films even indicate robust ferroelectricity at room temperature. This Tc enhancement is attributed to the stress-free interface, larger electronic band gap and greatly reduced Sn vacancy concentration in the ultrathin films. The lateral domain size varies from several tens to several hundreds of nanometers, and the spontaneous polarization direction could be modified by STM tip. Those properties of ultrathin SnTe films show the potential application on ferroelectric devices. The work was financially supported by Ministry of Science and Technology of China, National Science Foundation and Ministry of Education of China.

Gap state charge induced spin-dependent negative differential resistance in tunnel junctions

NASA Astrophysics Data System (ADS)

Jiang, Jun; Zhang, X.-G.; Han, X. F.

2016-04-01

We propose and demonstrate through first-principles calculation a new spin-dependent negative differential resistance (NDR) mechanism in magnetic tunnel junctions (MTJ) with cubic cation disordered crystals (CCDC) AlO x or Mg1-x Al x O as barrier materials. The CCDC is a class of insulators whose band gap can be changed by cation doping. The gap becomes arched in an ultrathin layer due to the space charge formed from metal-induced gap states. With an appropriate combination of an arched gap and a bias voltage, NDR can be produced in either spin channel. This mechanism is applicable to 2D and 3D ultrathin junctions with a sufficiently small band gap that forms a large space charge. It provides a new way of controlling the spin-dependent transport in spintronic devices by an electric field. A generalized Simmons formula for tunneling current through junction with an arched gap is derived to show the general conditions under which ultrathin junctions may exhibit NDR.

BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swerts, J., E-mail: Johan.Swerts@imec.be; Mertens, S.; Lin, T.

Perpendicularly magnetized MgO-based tunnel junctions are envisaged for future generation spin-torque transfer magnetoresistive random access memory devices. Achieving a high tunnel magneto resistance and preserving it together with the perpendicular magnetic anisotropy during BEOL CMOS processing are key challenges to overcome. The industry standard technique to deposit the CoFeB/MgO/CoFeB tunnel junctions is physical vapor deposition. In this letter, we report on the use of an ultrathin Mg layer as free layer cap to protect the CoFeB free layer from sputtering induced damage during the Ta electrode deposition. When Ta is deposited directly on CoFeB, a fraction of the surface ofmore » the CoFeB is sputtered even when Ta is deposited with very low deposition rates. When depositing a thin Mg layer prior to Ta deposition, the sputtering of CoFeB is prevented. The ultra-thin Mg layer is sputtered completely after Ta deposition. Therefore, the Mg acts as a sacrificial layer that protects the CoFeB from sputter-induced damage during the Ta deposition. The Ta-capped CoFeB free layer using the sacrificial Mg interlayer has significantly better electrical and magnetic properties than the equivalent stack without protective layer. We demonstrate a tunnel magneto resistance increase up to 30% in bottom pinned magnetic tunnel junctions and tunnel magneto resistance values of 160% at resistance area product of 5 Ω.μm{sup 2}. Moreover, the free layer maintains perpendicular magnetic anisotropy after 400 °C annealing.« less

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

PubMed

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Enhancement of Spin-transfer torque switching via resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torquemore » thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.« less

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

Single crystalline silicene consist of various superstructures using a flexible ultrathin Ag(111) template on Si(111)

NASA Astrophysics Data System (ADS)

Hsu, Hung-Chang; Lu, Yi-Hung; Su, Tai-Lung; Lin, Wen-Chin; Fu, Tsu-Yi

2018-07-01

Using scanning tunneling microscopy, we studied the formation of silicene on an ultrathin Ag(111) film with a thickness of 6–12 monolayers, which was prepared on a Si(111) substrate. A low-energy electron diffraction pattern with an oval spot indicated that the ultrathin Ag(111) film is more disordered than the single-crystal Ag(111). After Si epitaxy growth, we still measured the classical 4 × 4, √13 × √13, and 2√3 × 2√3 silicene superstructures, which are the same as the silicene superstructure on single-crystal Ag(111). Growing silicene on a single-crystal Ag(111) bulk usually results in the formation of a defect boundary due to the inconsistent orientation of various superstructures. By comparing the angles and boundary conditions between various silicene superstructures on the ultrathin film and single-crystal Ag(111), we discovered that a consistent orientation of various superstructures without obvious boundary defects formed on the ultrathin Ag(111) film. The results indicated single crystalline silicene formation, which was attributed to the domain rotation and lateral shift of the disordered ultrathin Ag(111) film.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Growden, Tyler A.; Zhang, Weidong; Brown, Elliott R.; Storm, David F.; Hansen, Katurah; Fakhimi, Parastou; Meyer, David J.; Berger, Paul R.

2018-01-01

We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370-385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.

Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

PubMed

Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

2017-09-06

The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

Structural Properties of Alternate Monatomic Layered [Fe/Co]n Epitaxial Films on MgO Substrate

NASA Astrophysics Data System (ADS)

Chu, In Chang; Saki, Yoshinobu; Kawasaki, Shohei; Doi, Masaaki; Sahashi, Masashi

2008-06-01

Body-centered-cubic (bcc) Fe50Co50 material is reported to show a high bulk spin scattering coefficient on current perpendicular to plane-giant magneto-resistance (CPP-GMR) system. But the origin of that phenomenon does not make sure yet. We prepared artificially alternate monatomic layered (AML) [Fe/Co] 41 MLs epitaxial films (Ts: 75, 250 °C) by monatomic deposition method and investigated the topology of AML [Fe/Co]n epitaxial films on MgO substrate with different orientation (001), (011) by the scanning tunnel microscopy (STM) and reflection high energy electron diffraction (RHEED), which we could confirm Frank-van der Merwe (FM) growth mode for AML [Fe/Co]n on MgO(001) and Volmer-Weber (VW) growth mode for that on Mg(011). The roughness of surface, Ra (0.20 nm) of AML [Fe/Co] 41 MLs epitaxial film grown at 75 °C on MgO(001) is smaller than that (0.46 nm) of AML [Fe/Co] grown at 250 °C on MgO(001), which has the large terraces of over 50 nm (Ra: 0.17 nm), even though there are some valleys between large terraces. Moreover we confirmed the structural properties of trilayered epitaxial films with AML [Fe/Co]n (Ra: 0.18 nm) and Fe50Co50 alloy epitaxial film on Au electrode by RHEED before confirming the characteristics of CPP-GMR devices.

Transport properties of ultrathin YBa2Cu3O7 -δ nanowires: A route to single-photon detection

NASA Astrophysics Data System (ADS)

Arpaia, Riccardo; Golubev, Dmitri; Baghdadi, Reza; Ciancio, Regina; Dražić, Goran; Orgiani, Pasquale; Montemurro, Domenico; Bauch, Thilo; Lombardi, Floriana

2017-08-01

We report on the growth and characterization of ultrathin YBa2Cu3O7 -δ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have also been successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films and critical current densities, which are limited by only vortex dynamics. The 10-nm-thick YBCO nanowires without the Au capping present hysteretic current-voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. We associate such bistability to the presence of localized normal domains within the superconductor. The presence of the voltage switch in ultrathin YBCO nanostructures, characterized by high sheet resistance values and high critical current values, makes our nanowires very attractive devices to engineer single-photon detectors.

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

NASA Astrophysics Data System (ADS)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Growth of an Ultrathin Zirconia Film on Pt3Zr Examined by High-Resolution X-ray Photoelectron Spectroscopy, Temperature-Programmed Desorption, Scanning Tunneling Microscopy, and Density Functional Theory.

PubMed

Li, Hao; Choi, Joong-Il Jake; Mayr-Schmölzer, Wernfried; Weilach, Christian; Rameshan, Christoph; Mittendorfer, Florian; Redinger, Josef; Schmid, Michael; Rupprechter, Günther

2015-02-05

Ultrathin (∼3 Å) zirconium oxide films were grown on a single-crystalline Pt 3 Zr(0001) substrate by oxidation in 1 × 10 -7 mbar of O 2 at 673 K, followed by annealing at temperatures up to 1023 K. The ZrO 2 films are intended to serve as model supports for reforming catalysts and fuel cell anodes. The atomic and electronic structure and composition of the ZrO 2 films were determined by synchrotron-based high-resolution X-ray photoelectron spectroscopy (HR-XPS) (including depth profiling), low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. Oxidation mainly leads to ultrathin trilayer (O-Zr-O) films on the alloy; only a small area fraction (10-15%) is covered by ZrO 2 clusters (thickness ∼0.5-10 nm). The amount of clusters decreases with increasing annealing temperature. Temperature-programmed desorption (TPD) of CO was utilized to confirm complete coverage of the Pt 3 Zr substrate by ZrO 2 , that is, formation of a closed oxide overlayer. Experiments and DFT calculations show that the core level shifts of Zr in the trilayer ZrO 2 films are between those of metallic Zr and thick (bulklike) ZrO 2 . Therefore, the assignment of such XPS core level shifts to substoichiometric ZrO x is not necessarily correct, because these XPS signals may equally well arise from ultrathin ZrO 2 films or metal/ZrO 2 interfaces. Furthermore, our results indicate that the common approach of calculating core level shifts by DFT including final-state effects should be taken with care for thicker insulating films, clusters, and bulk insulators.

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Leduc, Henry G. (Inventor)

1992-01-01

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Superstructures and Electronic Properties of Manganese-Phthalocyanine Molecules on Au(110) from Submonolayer Coverage to Ultrathin Molecular Films.

PubMed

Topyła, M; Néel, N; Kröger, J

2016-07-12

The adsorption of manganese-phthalocyanine molecules on Au(110) was investigated using a low-temperature scanning tunneling microscope. A rich variety of commensurate superstructures was observed upon increasing the molecule coverage from submonolayers to ultrathin films. All structures were associated with reconstructions of the Au(110) substrate. Molecules adsorbed in the second molecular layer exhibited negative differential conductance occurring symmetrically around zero bias voltage. A double-barrier tunneling model rationalized this observation in terms of a peaked molecular resonance at the Fermi energy together with a voltage drop across the molecular film.

Effect of interfacial structures on spin dependent tunneling in epitaxial L1 0-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE PAGES

Yang, G.; Li, D. L.; Wang, S. G.; ...

2015-02-24

In this study, epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1 0-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Finally,more » both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, G.; Li, D. L.; Wang, S. G., E-mail: Sgwang@iphy.ac.cn

2015-02-28

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominantmore » role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.« less

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

PubMed Central

Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tom

2016-01-01

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs. PMID:26924259

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

PubMed

Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

2016-12-01

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal Adatoms and Clusters on Ultrathin Zirconia Films

PubMed Central

2016-01-01

Nucleation and growth of transition metals on zirconia has been studied by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Since STM requires electrical conductivity, ultrathin ZrO2 films grown by oxidation of Pt3Zr(0001) and Pd3Zr(0001) were used as model systems. DFT studies were performed for single metal adatoms on supported ZrO2 films as well as the (1̅11) surface of monoclinic ZrO2. STM shows decreasing cluster size, indicative of increasing metal–oxide interaction, in the sequence Ag < Pd ≈ Au < Ni ≈ Fe. Ag and Pd nucleate mostly at steps and domain boundaries of ZrO2/Pt3Zr(0001) and form three-dimensional clusters. Deposition of low coverages of Ni and Fe at room temperature leads to a high density of few-atom clusters on the oxide terraces. Weak bonding of Ag to the oxide is demonstrated by removing Ag clusters with the STM tip. DFT calculations for single adatoms show that the metal–oxide interaction strength increases in the sequence Ag < Au < Pd < Ni on monoclinic ZrO2, and Ag ≈ Au < Pd < Ni on the supported ultrathin ZrO2 film. With the exception of Au, metal nucleation and growth on ultrathin zirconia films follow the usual rules: More reactive (more electropositive) metals result in a higher cluster density and wet the surface more strongly than more noble metals. These bind mainly to the oxygen anions of the oxide. Au is an exception because it can bind strongly to the Zr cations. Au diffusion may be impeded by changing its charge state between −1 and +1. We discuss differences between the supported ultrathin zirconia films and the surfaces of bulk ZrO2, such as the possibility of charge transfer to the substrate of the films. Due to their large in-plane lattice constant and the variety of adsorption sites, ZrO2{111} surfaces are more reactive than many other oxygen-terminated oxide surfaces. PMID:27213024

Band-to-band tunneling in Γ valley for Ge source lateral tunnel field effect transistor: Thickness scaling

NASA Astrophysics Data System (ADS)

Jain, Prateek; Rastogi, Priyank; Yadav, Chandan; Agarwal, Amit; Chauhan, Yogesh Singh

2017-07-01

The direct and indirect valleys in Germanium (Ge) are separated by a very small offset, which opens up the prospect of direct tunneling in the Γ valley of an extended Ge source tunnel field effect transistor (TFET). We explore the impact of thickness scaling of extended Ge source lateral TFET on the band to band tunneling (BTBT) current. The Ge source is extended inside the gate by 2 nm to confine the tunneling in Ge only. We observe that as the thickness is scaled, the band alignment at the Si/Ge heterojunction changes significantly, which results in an increase in Ge to Si BTBT current. Based on density functional calculations, we first obtain the band structure parameters (bandgap, effective masses, etc.) for the Ge and Si slabs of varying thickness, and these are then used to obtain the thickness dependent Kane's BTBT tunneling parameters. We find that electrostatics improves as the thickness is reduced in the ultra-thin Ge film ( ≤ 10 nm). The ON current degrades as we scale down in thickness; however, the subthreshold slope ( S S AVG ) improves remarkably with thickness scaling due to subsurface BTBT. We predict that 8 nm thin devices offer the best option for optimized ON current and S S AVG .

Ultrathin Shape Change Smart Materials.

PubMed

Xu, Weinan; Kwok, Kam Sang; Gracias, David H

2018-02-20

With the discovery of graphene, significant research has focused on the synthesis, characterization, and applications of ultrathin materials. Graphene has also brought into focus other ultrathin materials composed of organics, polymers, inorganics, and their hybrids. Together, these ultrathin materials have unique properties of broad significance. For example, ultrathin materials have a large surface area and high flexibility which can enhance conformal contact in wearables and sensors leading to improved sensitivity. When porous, the short transverse diffusion length in these materials allows rapid mass transport. Alternatively, when impermeable, these materials behave as an ultrathin barrier. Such controlled permeability is critical in the design of encapsulation and drug delivery systems. Finally, ultrathin materials often feature defect-free and single-crystal-like two-dimensional atomic structures resulting in superior mechanical, optical, and electrical properties. A unique property of ultrathin materials is their low bending rigidity, which suggests that they could easily be bent, curved, or folded into 3D shapes. In this Account, we review the emerging field of 2D to 3D shape transformations of ultrathin materials. We broadly define ultrathin to include materials with a thickness below 100 nm and composed of a range of organic, inorganic, and hybrid compositions. This topic is important for both fundamental and applied reasons. Fundamentally, bending and curving of ultrathin films can cause atomistic and molecular strain which can alter their physical and chemical properties and lead to new 3D forms of matter which behave very differently from their planar precursors. Shape change can also lead to new 3D architectures with significantly smaller form factors. For example, 3D ultrathin materials would occupy a smaller space in on-chip devices or could permeate through tortuous media which is important for miniaturized robots and smart dust applications. Our

Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Teixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N. F. F.; Auffret, S.; Sousa, R. C.; Dieny, B.; Alves, E.; Sobolev, N. A.

2018-05-01

We have used the ferromagnetic resonance in the X-band (9.37 GHz) to investigate the effect of 400 keV Ar+ irradiation on the perpendicular magnetic anisotropy (PMA) and Gilbert damping parameter, α, of double-MgO free layers designed for application in perpendicular magnetic tunnel junctions. The samples comprised a MgO/Fe72Co8B20/X(0.2 nm)/Fe72Co8B20/MgO layer stack, where X stands for an ultrathin Ta or W spacer. Samples with two different total FeCoB layer thicknesses, tFCB = 3.0 nm and tFCB = 2.6 nm, were irradiated with ion fluences ranging from 1012 cm-2 to 1016 cm-2. The effective first-order PMA field, BK1, decreased nearly linearly with the logarithm of the fluence for both FeCoB thicknesses and spacer elements. The decrease in BK1, which is likely caused by an ion-induced intermixing at the FeCoB/MgO interfaces, resulted in a reorientation of the magnetization of the free layers with tFCB = 2.6 nm, initially exhibiting a perpendicular easy-axis anisotropy. For intermediate fluences, 1013 cm-2 and 1014 cm-2, easy-cone states with different cone angles could be induced in the free layer with a W spacer. Importantly, no corresponding increase in the Gilbert damping was observed. This study shows that ion irradiation can be used to tune the easy-cone anisotropy in perpendicular magnetic tunnel junctions, which is interesting for spintronic applications such as spin-torque magnetic memory devices, oscillators, and sensors.

Gilbert Damping Parameter in MgO-Based Magnetic Tunnel Junctions from First Principles

NASA Astrophysics Data System (ADS)

Tang, Hui-Min; Xia, Ke

2017-03-01

We perform a first-principles study of the Gilbert damping parameter (α ) in normal-metal/MgO-cap/ferromagnet/MgO-barrier/ferromagnetic magnetic tunnel junctions. The damping is enhanced by interface spin pumping, which can be parametrized by the spin-mixing conductance (G↑↓ ). The calculated dependence of Gilbert damping on the thickness of the MgO capping layer is consistent with experiment and indicates that the decreases in α with increasing thickness of the MgO capping layer is caused by suppression of spin pumping. Smaller α can be achieved by using a clean interface and alloys. For a thick MgO capping layer, the imaginary part of the spin-mixing conductance nearly equals the real part, and the large imaginary mixing conductance implies that the change in the frequency of ferromagnetic resonance can be observed experimentally. The normal-metal cap significantly affects the Gilbert damping.

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

PubMed

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

Optimization of the buffer surface of CoFeB/MgO/CoFeB-based magnetic tunnel junctions by ion beam milling

NASA Astrophysics Data System (ADS)

Martins, L.; Ventura, J.; Ferreira, R.; Freitas, P. P.

2017-12-01

Due to their high tunnel magnetoresistance (TMR) ratios at room temperature, magnetic tunnel junctions (MTJs) with a crystalline MgO insulating barrier and CoFeB ferromagnetic (FM) layers are the best candidates for novel magnetic memory applications. To overcome impedance matching problems in electronic circuits, the MgO barrier must have an ultra-low thickness (∼1 nm). Therefore, it is mandatory to optimize the MTJ fabrication process, in order to prevent relevant defects in the MgO barrier that could affect the magnetic and electrical MTJ properties. Here, a smoothing process aiming to decrease the roughness of the buffer surface before the deposition of the full MTJ stack is proposed. An ion beam milling process was used to etch the surface of an MTJ buffer structure with a Ru top layer. The morphologic results prove an effective decrease of the Ru surface roughness with the etching time. The electrical and magnetic results obtained for MTJs with smoothed buffer structures show a direct influence of the buffer roughness and coupling field on the improvement of the TMR ratio.

Pressure-induced photoluminescence of MgO

NASA Astrophysics Data System (ADS)

Li, Xin; Yuan, Ye; Zhang, Jinbo; Kim, Taehyun; Zhang, Dongzhou; Yang, Ke; Lee, Yongjae; Wang, Lin

2018-05-01

It is reported in this paper that pressure can promote strong photoluminescence (PL) in MgO. The PL measurements of MgO indicate that it has no obvious luminescence at pressures lower than 13 GPa. PL starts to appear upon further compression and reaches a maximum intensity at about 35 GPa. The center of the emission band shows a red shift at lower pressures and turns to a blue shift as pressure exceeds 25 GPa. The PL is preserved upon complete decompression. The defects and micro-strain due to the plastic deformation of MgO are likely responsible for the origin of the luminescence.

Nucleation of C60 on ultrathin SiO2

NASA Astrophysics Data System (ADS)

Conrad, Brad; Groce, Michelle; Cullen, William; Pimpinelli, Alberto; Williams, Ellen; Einstein, Ted

2012-02-01

We utilize scanning tunneling microscopy to characterize the nucleation, growth, and morphology of C60 on ultrathin SiO2 grown at room temperature. C60 thin films are deposited in situ by physical vapor deposition with thicknesses varying from <0.05 to ˜1 ML. Island size and capture zone distributions are examined for a varied flux rate and substrate deposition temperature. The C60 critical nucleus size is observed to change between monomers and dimers non-monotonically from 300 K to 500 K. Results will be discussed in terms of recent capture zone studies and analysis methods. Relation to device fabrication will be discussed. doi:10.1016/j.susc.2011.08.020

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.

PubMed

Sun, Pengfei; Ishihara, Ryoichi; Charbon, Edoardo

2016-02-22

We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside- (FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.

Transport in ultrathin gold films decorated with magnetic Gd atoms

NASA Astrophysics Data System (ADS)

Alemani, Micol; Helgren, Erik; Hugel, Addison; Hellman, Frances

2008-03-01

We have performed four-probe transport measurements of ultrathin Au films decorated with Gd ad-atoms. The samples were prepared by quench condensation, i.e., sequential evaporation on a cryogenically cooled substrate under UHV conditions while monitoring the film thickness and resistance. Electrically continuous Au films at thickness of about 2 mono-layers of material are grown on an amorphous Ge wetting layer. The quench condensation method provides a sensitive control on the sample growth process, allowing us to tune the morphological and electrical configuration of the system. The ultrathin gold films develop from an insulating to a metallic state as a function of film thickness. The temperature dependence of the Au conductivity for different thickness is studied. It evolves from hopping transport for the insulating films, to a ln T dependence for thicker films. For gold films in the insulating regime we found a decreasing resistance by adding Gd. This is in agreement with a decreasing tunneling barrier height between metallic atoms. The Gd magnetic moments are randomly oriented for isolated atoms. This magnetic disorder leads to scattering of the charge carriers and a reduced conductivity compared to nonmagnetic materials.

Tunneling magnetoresistance from a symmetry filtering effect

PubMed Central

Butler, William H

2008-01-01

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. PMID:27877932

Multifunctional MgO Layer in Perovskite Solar Cells.

PubMed

Guo, Xudong; Dong, Haopeng; Li, Wenzhe; Li, Nan; Wang, Liduo

2015-06-08

A multifunctional magnesium oxide (MgO) layer was successfully introduced into perovskite solar cells (PSCs) to enhance their performance. MgO was coated onto the surface of mesoporous TiO(2) by the decomposition of magnesium acetate and, therefore, could block contact between the perovskite and TiO(2). X-ray photoelectron spectroscopy and infrared spectroscopy showed that the amount of H(2)O/hydroxyl absorbed on the TiO(2) decreased after MgO modification. The UV/Vis absorption spectra of the perovskite with MgO modification revealed an enhanced photoelectric performance compared with that of unmodified perovskite after UV illumination. In addition to the photocurrent, the photovoltage and fill factor also showed an enhancement after modification, which resulted in an increase in the overall efficiency of the cell from 9.6 to 13.9 %. Electrochemical impedance spectroscopy (EIS) confirmed that MgO acts as an insulating layer to reduce charge recombination. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recovery of SO2 and MgO from By-Products of MgO Wet Flue Gas Desulfurization.

PubMed

Yan, Liyun; Lu, Xiaofeng; Wang, Quanhai; Guo, Qiang

2014-11-01

An industrial demonstration unit using natural gas as a heat source was built to calcine the by-products of MgO wet flue gas desulfurization from power plants; influencing factors on the SO 2 content in calciner gas were comprehensively analyzed; and an advantageous recycling condition of MgO and SO 2 from by-products was summarized. Results showed that the SO 2 content in the calciner gas was increased by more than 10 times under a lower excess air coefficient, a higher feed rate, a lower crystal water in by-products, and a higher feed port position. For the tests conducted under the excess air coefficient above and below one, the effect of the furnace temperature on the SO 2 content in the calciner gas was reversed. Results of activity analysis indicate that particles of MgO generated under the calcination temperature of 900-1,000°C had a high activity. In contrast, due to the slight sintering, MgO generated under the calcination temperature of 1,100°C had a low activity. To recycle SO 2 as well as MgO, a temperature range of 900-927°C for TE103 is proposed. These studies will prompt the desulfurization market diversification, reduce the sulfur's dependence on imports for making sulfuric acid, be meaningful to balance the usage of the natural resource in China, and be regarded as a reference for the development of this technology for other similar developing countries.

Individual Magnetic Molecules on Ultrathin Insulating Surfaces

NASA Astrophysics Data System (ADS)

El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

2012-02-01

Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

Size effects in MgO cube dissolution.

PubMed

Baumann, Stefan O; Schneider, Johannes; Sternig, Andreas; Thomele, Daniel; Stankic, Slavica; Berger, Thomas; Grönbeck, Henrik; Diwald, Oliver

2015-03-10

Stability parameters and dissolution behavior of engineered nanomaterials in aqueous systems are critical to assess their functionality and fate under environmental conditions. Using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction, we investigated the stability of cubic MgO particles in water. MgO dissolution proceeding via water dissociation at the oxide surface, disintegration of Mg(2+)-O(2-) surface elements, and their subsequent solvation ultimately leads to precipitation of Mg(OH)2 nanosheets. At a pH ≥ 10, MgO nanocubes with a size distribution below 10 nm quantitatively dissolve within few minutes and convert into Mg(OH)2 nanosheets. This effect is different from MgO cubes originating from magnesium combustion in air. With a size distribution in the range 10 nm ≤ d ≤ 1000 nm they dissolve with a significantly smaller dissolution rate in water. On these particles water induced etching generates (110) faces which, above a certain face area, dissolve at a rate equal to that of (100) planes.1 The delayed solubility of microcrystalline MgO is attributed to surface hydroxide induced self-inhibition effects occurring at the (100) and (110) microplanes. The present work underlines the importance of morphology evolution and surface faceting of engineered nanomaterials particles during their dissolution.

Antibacterial activities of magnesium oxide (MgO) nanoparticles against foodborne pathogens

NASA Astrophysics Data System (ADS)

Jin, Tony; He, Yiping

2011-12-01

The antibacterial activities of magnesium oxide nanoparticles (MgO NP) alone or in combination with other antimicrobials (nisin and ZnO NP) against Escherichia coli O157:H7 and Salmonella Stanley were investigated. The results show that MgO NP have strong bactericidal activity against the pathogens, achieving more than 7 log reductions in bacterial counts. The antibacterial activity of MgO NP increased as the concentrations of MgO increased. A synergistic effect of MgO in combination with nisin was observed as well. However, the addition of ZnO NP to MgO NP did not enhance the antibacterial activity of MgO against both pathogens. Scanning electron microscopy was used to characterize the morphological changes of E. coli O157:H7 before and after antimicrobial treatments. It was revealed that MgO NP treatments distort and damage the cell membrane, resulting in a leakage of intracellular contents and eventually the death of bacterial cells. These results suggest that MgO NP alone or in combination with nisin could potentially be used as an effective antibacterial agent to enhance food safety.

Recovery of SO2 and MgO from By-Products of MgO Wet Flue Gas Desulfurization

PubMed Central

Yan, Liyun; Lu, Xiaofeng; Wang, Quanhai; Guo, Qiang

2014-01-01

Abstract An industrial demonstration unit using natural gas as a heat source was built to calcine the by-products of MgO wet flue gas desulfurization from power plants; influencing factors on the SO2 content in calciner gas were comprehensively analyzed; and an advantageous recycling condition of MgO and SO2 from by-products was summarized. Results showed that the SO2 content in the calciner gas was increased by more than 10 times under a lower excess air coefficient, a higher feed rate, a lower crystal water in by-products, and a higher feed port position. For the tests conducted under the excess air coefficient above and below one, the effect of the furnace temperature on the SO2 content in the calciner gas was reversed. Results of activity analysis indicate that particles of MgO generated under the calcination temperature of 900–1,000°C had a high activity. In contrast, due to the slight sintering, MgO generated under the calcination temperature of 1,100°C had a low activity. To recycle SO2 as well as MgO, a temperature range of 900–927°C for TE103 is proposed. These studies will prompt the desulfurization market diversification, reduce the sulfur's dependence on imports for making sulfuric acid, be meaningful to balance the usage of the natural resource in China, and be regarded as a reference for the development of this technology for other similar developing countries. PMID:25371652

Fabrication of Single Crystal MgO Capsules

NASA Technical Reports Server (NTRS)

Danielson, Lisa

2012-01-01

A method has been developed for machining MgO crystal blocks into forms for containing metallic and silicate liquids at temperatures up to 2,400 C, and pressures up to at least 320 kilobars. Possible custom shapes include tubes, rods, insulators, capsules, and guides. Key differences in this innovative method include drilling along the crystallographic zone axes, use of a vibration minimizing material to secure the workpiece, and constant flushing of material swarf with a cooling medium/lubricant (water). A single crystal MgO block is cut into a section .5 mm thick, 1 cm on a side, using a low-speed saw with a 0.004 blade. The cut is made parallel to the direction of cleavage. The block may be cut to any thickness to achieve the desired length of the piece. To minimize drilling vibrations, the MgO block is mounted on a piece of adhesive putty in a vise. The putty wad cradles the bottom half of the entire block. Diamond coring tools are used to drill the MgO to the desired custom shape, with water used to wet and wash the surface of swarf. Compressed air may also be used to remove swarf during breaks in drilling. The MgO workpiece must be kept cool at all times with water. After all the swarf is rinsed off, the piece is left to dry overnight. If the workpiece is still attached to the base of the MgO block after drilling, it may be cut off by using a diamond cutoff wheel on a rotary hand tool or by using a low-speed saw.

Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratiomore » and hence the barrier quality.« less

Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

DOE PAGES

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.; ...

2018-01-08

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratiomore » and hence the barrier quality.« less

Influence of MgO barrier quality on spin-transfer torque in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Tiwari, Dhananjay; Sharma, Raghav; Heinonen, O. G.; Åkerman, Johan; Muduli, P. K.

2018-01-01

We studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

Perpendicular magnetic anisotropy in CoXPd100-X alloys for magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Clark, B. D.; Natarajarathinam, A.; Tadisina, Z. R.; Chen, P. J.; Shull, R. D.; Gupta, S.

2017-08-01

CoFeB/MgO-based perpendicular magnetic tunnel junctions (p-MTJ's) with high anisotropy and low damping are critical for spin-torque transfer random access memory (STT-RAM). Most schemes of making the pinned CoFeB fully perpendicular require ferrimagnets with high damping constants, a high temperature-grown L10 alloy, or an overly complex multilayered synthetic antiferromagnet (SyAF). We report a compositional study of perpendicular CoxPd alloy-pinned Co20Fe60B20/MgO based MTJ stacks, grown at moderate temperatures in a planetary deposition system. The perpendicular anisotropy of the CoxPd alloy films can be tuned based on the layer thickness and composition. The films were characterized by alternating gradient magnetometry (AGM), energy-dispersive X-rays (EDX), and X-ray diffraction (XRD). Current-in-plane tunneling (CIPT) measurements have also been performed on the compositionally varied CoxPd MTJ stacks. The CoxPd alloy becomes fully perpendicular at approximately x = 30% (atomic fraction) Co. Full-film MTJ stacks of Si/SiO2/MgO (13)/CoXPd100-x (50)/Ta (0.3)/CoFeB (1)/MgO (1.6)/CoFeB (1)/Ta (5)/Ru (10), with the numbers enclosed in parentheses being the layer thicknesses in nm, were sputtered onto thermally oxidized silicon substrates and in-situ lamp annealed at 400 °C for 5 min. CIPT measurements indicate that the highest TMR is observed for the CoPd composition with the highest perpendicular magnetic anisotropy.

Surface exciton emission of MgO crystals

NASA Astrophysics Data System (ADS)

Kuang, Wen-Jian; Li, Qing; Chen, Yu-Xiang; Hu, Kai; Wang, Ning-Hui; Xing, Fang-Li; Yan, Qun; Sun, Shuai-Shuai; Huang, Yan; Tao, Ye; Tolner, Harm

2013-09-01

MgO crystals have been exposed to vacuum ultraviolet (VUV) radiation from a synchrotron, with energies up to 9 eV, and the emitted light, at wavelengths above 200 nm, was observed. It is concluded that bulk excitons, play an important role in the diffusion of energy inside MgO crystals, resulting in 5.85 eV (212 nm) emission from the MgO terraces of large (0.2-2 µm) MgO : F crystals. In the case of aliovalent impurity doping, then the bulk exciton energy is also transferred to the Vk centres and 5.3 eV (235 nm) light is emitted. Both fluorine and silicon doping appear to promote UV surface emission, acting similarly to an ns2 ion inside MgO, while strong scandium doping is killing the surface emission completely. The 212 nm surface UV emission and the 235 nm bulk UV emission can be excited only at the bandgap edge. Broadband visible light, centred around 400 nm, is also emitted. Contrary to the UV emission, this is not generated when excited at the bandgap edge; instead, we find that it is only excited at sub-bandgap energies, with a maximum at the 5C surface excitation energy of 5.71 eV (217 nm) for the MgO terraces.

Fabrication of superconducting nanowires from ultrathin MgB2 films via focused ion beam milling

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Da; Liu, Zheng-Hao; Zhang, Yan; Ma, Ping; Feng, Qing-Rong; Wang, Yue; Gan, Zi-Zhao

2015-02-01

High quality superconducting nanowires were fabricated from ultrathin MgB2 films by a focused ion beam milling technique. The precursor MgB2 films in 10 nm thick were grown on MgO substrates by using a hybrid physical-chemical vapor deposition method. The nanowires, in widths of about 300-600 nm and lengths of 1 or 10 μm, showed high superconducting critical temperatures (Tc's) above 34 K and narrow superconducting transition widths (ΔTc's) of 1-3 K. The superconducting critical current density Jc of the nanowires was above 5 × 107 A/cm2 at 20 K. The high Tc, narrow ΔTc, and high Jc of the nanowires offered the possibility of making MgB2-based nano-devices such as hot-electron bolometers and superconducting nanowire single-photon detectors with high operating temperatures at 15-20 K.

Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gibson, Andrew J.; Temperton, Robert H.; Handrup, Karsten

2014-06-21

The interaction of the dye molecule N3 (cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4′-dicarbo-xylato) -ruthenium(II)) with the ultra-thin oxide layer on a AlNi(110) substrate, has been studied using synchrotron radiation based photoelectron spectroscopy, resonant photoemission spectroscopy, and near edge X-ray absorption fine structure spectroscopy. Calibrated X-ray absorption and valence band spectra of the monolayer and multilayer coverages reveal that charge transfer is possible from the molecule to the AlNi(110) substrate via tunnelling through the ultra-thin oxide layer and into the conduction band edge of the substrate. This charge transfer mechanism is possible from the LUMO+2 and 3 in the excited state but not from the LUMO,more » therefore enabling core-hole clock analysis, which gives an upper limit of 6.0 ± 2.5 fs for the transfer time. This indicates that ultra-thin oxide layers are a viable material for use in dye-sensitized solar cells, which may lead to reduced recombination effects and improved efficiencies of future devices.« less

Force and light tuning vertical tunneling current in the atomic layered MoS2.

PubMed

Li, Feng; Lu, Zhixing; Lan, Yann-Wen; Jiao, Liying; Xu, Minxuan; Zhu, Xiaoyang; Zhang, Xiankun; Wu, Hualin; Qi, Junjie

2018-07-06

In this work, the vertical electrical transport behavior of bilayer MoS 2 under the coupling of force and light was explored by the use of conductive atomic force microscopy. We found that the current-voltage behavior across the tip-MoS 2 -Pt junction is a tunneling current that can be well fitted by a Simmons approximation. The transport behavior is direct tunneling at low bias and Fowler-Nordheim tunneling at high bias, and the transition voltage and tunnel barrier height are extracted. The effect of force and light on the effective band gap of the junction is investigated. Furthermore, the source-drain current drops surprisingly when we continually increase the force, and the dropping point is altered by the provided light. This mechanism is responsible for the tuning of tunneling barrier height and width by force and light. These results provide a new way to design devices that take advantage of ultrathin two-dimensional materials. Ultrashort channel length electronic components that possess tunneling current are important for establishing high-efficiency electronic and optoelectronic systems.

WIPP Magnesium Oxide (MgO) - Planned Change Request

EPA Pesticide Factsheets

On April 10, 2006, the DOE submitted a planned change request pertaining to the amount of MgO emplaced in the WIPP repository. MgO is an engineered barrier that DOE included as part of the original WIPP Certification Decision.

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

NASA Astrophysics Data System (ADS)

Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

2013-07-01

Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 104, about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

Self-organized ferromagnetic nanowires in MgO-based magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Seike, Masayoshi; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

2013-08-01

The focus of this study is to examine the distribution of defects and defect-induced properties in MgO-based magnetic tunnel junctions (MTJs). To this end, first-principles calculations were performed to estimate the electronic structures and total energies of MgO with various defects by using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. From connections drawn between the calculated results and previously reported experimental data, we propose that self-organized ferromagnetic nanowires of magnesium vacancies can be formed in MgO-based MTJs. This self-organization may provide the foundation for a comprehensive understanding of the conductivity, tunnel barriers and quantum oscillations of MgO-based MTJs. Further experimental verification is needed before firm conclusions can be drawn.

Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

NASA Astrophysics Data System (ADS)

Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

2018-06-01

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

A study of the properties and microstructure of Ni 81Fe 19 ultrathin films with MgO

NASA Astrophysics Data System (ADS)

Li, Minghua; Han, Gan; Ding, Lei; Wang, Xiaocui; Liu, Yang; Feng, Chun; Wang, Haicheng; Yu, Guanghua

2012-01-01

The anisotropic magnetoresistance (AMR) of a Ta (5 nm)/MgO (3 nm)/Ni81Fe19 (10 nm)/MgO (2 nm)/Ta (3 nm) film with MgO-Nano Oxide Layer (NOL) increases dramatically from 1.05% to 3.24% compared with a Ta (5 nm)/Ni81Fe19 (10 nm)/Ta (3 nm) film without the MgO-NOL layer after annealing at 380 °C for 2 h. Although the MgO destroys the NiFe (1 1 1) texture, it enhances the specular electron scattering of the conduction electrons at the NOL interface and suppresses the interface reactions and diffusion at the Ta/NiFe and NiFe/Ta interfaces. The NiFe (1 1 1) texture was formed after the annealing, resulting in a higher AMR ratio. X-ray photoelectron spectroscope results show that Mg and Mg2+ were present in the MgOx films.

[Color selection of ultrathin veneers in clinic].

PubMed

Feng, Sun

2016-12-01

Ultrathin veneer is a new therapeutic technology developed from minimally invasive theories. Ultrathin veneer alters the unwanted shape and color of a tooth through minimal or lack of preparation. The color of tooth after restoration is mixed with the natural color of tooth, the original color of veneer, and the color of bonding material because of ultrathin (approximately 0.2 mm) veneer. Thus, the color is affected by numerous variations. Full considerations are required for creating designs. The author summarizes clinical points and provides suggestions for ultrathin veneer in color.

The characterization of a zebrafish mid-hindbrain mutant, mid-hindbrain gone (mgo).

PubMed

Shima, Takaki; Znosko, Wade; Tsang, Michael

2009-04-01

The vertebrate mid-hindbrain boundary (MHB) is a crucial morphological structure required for patterning and neural differentiation of the midbrain and anterior hindbrain. We isolated a novel zebrafish mutant, MHB gone (mgo), that exhibited a defective MHB. Expression of engrailed3 in the prospective MHB was absent at the 1-somite stage, suggesting that initiation of the isthmic organizer was disrupted in mgo mutants. Complementation test with mgo and noi, in which the pax2a gene is mutated, infer that the mgo mutant may represent a novel noi allele. However, pronephric, otic vesicle, and commissural axonal defects described in noi mutants were not associated with mgo mutants. Genetic mapping revealed that the mgo mutation is linked to the Pax2a locus, but no mutation was detected in pax2a exons or within intron-exon boundaries. Based on these findings, we propose that the mgo mutation genetically interacts with pax2a required for the initiation of MHB formation. Copyright 2009 Wiley-Liss, Inc.

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiang-Wei, E-mail: xwjiang@semi.ac.cn; Li, Shu-Shen; Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026

2014-05-12

Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at V{sub g} = V{sub d} = 0.5 V when 2 nm thin HfO{sub 2} layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnelmore » transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe{sub 2} based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.« less

Ultra-senstitive magnesium oxide-based magnetic tunnel junctions for spintronic immunoassay

NASA Astrophysics Data System (ADS)

Shen, Weifeng

We systematically studied the spin-dependent tunnel properties of MgO-based magnetic tunnel junctions (MTJs). Utilizing the spin-coherent tunnel effects of the MgO (001) insulating layer, we have achieved large tunneling magnetoresistance (TMR) ratios (above 200%) at room temperature in optimized MTJ devices. We have shown that the MgO surface roughness, and therefore device magnetoresistance, depends strongly on the pressure of the Ar sputtering gas. We have investigated the characteristics of MgO-MTJs, including their dependence on barrier thickness and bias voltage, their thermal stability and resistance to electrostatic discharge (ESD). We have also fabricated MgO-MTJs with a synthetic antiferromagnetic (SAF) free layer, which exhibits a coherent, single-domain-like switching. Our data show that MgO-MTJs have superior properties for low-field magnetic field sensing applications as compared with conventional AlOx-based MTJs. Based on this giant TMR effect, we designed and developed ultra-sensitive magnetic tunnel junction (MTJ) sensors and sensor arrays for biomagnetic sensing applications. By integrating MTJ sensor arrays into microfluidic channels, we were able to detect the presence of moving, micron-size superparamagnetic beads in real time. We have obtained an average signal of 80 mV for a single Dynal M-280 bead, with a signal-to-noise ratio (SNR) of 24 dB. We also biologically treated the MTJ sensor array surfaces, and demonstrated the detection of 2.5 muM single strand target DNA labeled with 16-nm-diameter Fe3O 4 nanoparticles (NPs). Our measured signal of 72 muV indicates that the current system's detection limit for analyte DNA is better than 150 nM. We also demonstrated the detection of live HeLa cells labeled with Fe 3O4 nanoparticles, with an effective signal of 8 mV and a signal-to-noise ratio of 6 dB. These results represent an important milestone in the development of spintronics immunoassay technology: the detection of a single live cell

Fabrication and properties of nanoscale multiferroic heterostructures for application in magneto-electric random access memory (MERAM) devices

NASA Astrophysics Data System (ADS)

Kim, Gunwoo

Magnetoelectric random access memory (MERAM) has emerged as a promising new class of non-volatile solid-state memory device. It offers nondestructive reading along with low power consumption during the write operation. A common implementation of MERAM involves use of multiferroic tunneling junctions (MFTJs), which besides offering non-volatility are both electrically and magnetically tunable. Fundamentally, a MFTJ consists of a heterostructure of an ultrathin multiferroic or ferroelectric material as the active tunneling barrier sandwiched between ferromagnetic electrodes. Thereby, the MFTJ exhibits both tunnel electroresistance (TER) and tunnel magnetoresistance (TMR) effects with application of an electric and magnetic field, respectively. In this thesis work, we have developed two-dimensional (2D) thin-film multiferroic heterostructure METJ prototypes consisting of ultrathin ferroelectric BaTiO3 (BTO) layer and a conducting ferromagnetic La0.67Sr 0.33MnO3 (LSMO) electrode. The heteroepitaxial films are grown using the pulsed laser deposition (PLD) technique. This oxide heterostructure offers the opportunity to study the nano-scale details of the tunnel electroresistance (TER) effect using scanning probe microscopy techniques. We performed the measurements using the MFP-3D (Asylum Research) scanning probe microscope. The ultrathin BTO films (1.2-2.0 nm) grown on LSMO electrodes display both ferro- and piezo-electric properties and exhibit large tunnel resistance effect. We have explored the growth and properties of one-dimensional (1D) heterostructures, referred to as multiferoric nanowire (NW) heterostructures. The ferromagnetic/ferroelectric composite heterostructures are grown as sheath layers using PLD on lattice-matched template NWs, e.g. MgO, that are deposited by chemical vapor deposition utilizing the vapor-liquid-solid (VLS) mechanism. The one-dimensional geometry can substantially overcome the clamping effect of the substrate present in two

Interfacial structure and electrical properties of ultrathin HfO2 dielectric films on Si substrates by surface sol-gel method

NASA Astrophysics Data System (ADS)

Gong, You-Pin; Li, Ai-Dong; Qian, Xu; Zhao, Chao; Wu, Di

2009-01-01

Ultrathin HfO2 films with about ~3 nm thickness were deposited on n-type (1 0 0) silicon substrates using hafnium chloride (HfCl4) source by the surface sol-gel method and post-deposition annealing (PDA). The interfacial structure and electrical properties of ultrathin HfO2 films were investigated. The HfO2 films show amorphous structures and smooth surface morphologies with a very thin interfacial oxide layer of ~0.5 nm and small surface roughness (~0.45 nm). The 500 °C PDA treatment forms stronger Hf-O bonds, leading to passivated traps, and the interfacial layer is mainly Hf silicate (HfxSiyOz). Equivalent oxide thickness of around 0.84 nm of HfO2/Si has been obtained with a leakage current density of 0.7 A cm-2 at Vfb + 1 V after 500 °C PDA. It was found that the current conduction mechanism of HfO2/Si varied from Schottky-Richardson emission to Fowler-Nordheim tunnelling at an applied higher positive voltage due to the activated partial traps remaining in the ultrathin HfO2 films.

Characterization of the surface properties of MgO using paper spray mass spectrometry.

PubMed

Zheng, Yajun; Zhang, Xiaoling; Bai, Zongquan; Zhang, Zhiping

2016-08-01

Significant advances have been made in the preparation of different morphologies of magnesium oxide (MgO), but the relationship between MgO morphology and its interactions with therapeutic drugs is rarely studied. Herein, we investigated the interactions between different morphologies of MgO and therapeutic drugs using paper spray mass spectrometry. Different morphologies of MgO including trapezoidal, needle-like, flower-like and nest-like structures were prepared through a facile precipitation method. The as-obtained MgO particles were then coated onto the surface of filter paper via vacuum filtration strategy. The coated papers with different morphologies of MgO were used as the substrates for paper spray mass spectrometry to explore the interactions between different MgO and therapeutic drugs. Through investigating the interactions between different morphologies of MgO coated papers and therapeutic drugs, it demonstrated that, in contrast to the trapezoidal, needle-like and nest-like MgO coated papers, different drugs in dried blood spots (DBS) were more favourably eluted off from the paper coated with flower-like MgO due to its weaker surface basicity. Also, the signal intensities of different drugs during paper spray were highly dependent on their elution behaviours. Paper spray mass spectrometry (MS) provides an avenue to elaborate the surface properties of MgO with different structures. The surface basicity of MgO played a crucial role in determining the elution behaviours of therapeutic drugs in DBS, and a more favourable elution behaviour tended to result in a higher MS signal. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Structure of a zinc oxide ultra-thin film on Rh(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuhara, J.; Kato, D.; Matsui, T.

The structural parameters of ultra-thin zinc oxide films on Rh(100) are investigated using low-energy electron diffraction intensity (LEED I–V) curves, scanning tunneling microscopy (STM), and first-principles density functional theory (DFT) calculations. From the analysis of LEED I–V curves and DFT calculations, two optimized models A and B are determined. Their structures are basically similar to the planer h-BN ZnO(0001) structure, although some oxygen atoms protrude from the surface, associated with an in-plane shift of Zn atoms. From a comparison of experimental STM images and simulated STM images, majority and minority structures observed in the STM images represent the two optimizedmore » models A and B, respectively.« less

Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

NASA Astrophysics Data System (ADS)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2018-01-01

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akushichi, T., E-mail: taiju.aku7@isl.titech.ac.jp; Shuto, Y.; Sugahara, S., E-mail: sugahara@isl.titech.ac.jp

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accuratelymore » fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.« less

Transparent Al+3 doped MgO thin films for functional applications

NASA Astrophysics Data System (ADS)

Maiti, Payel; Sekhar Das, Pradip; Bhattacharya, Manjima; Mukherjee, Smita; Saha, Biswajit; Mullick, Awadesh Kumar; Mukhopadhyay, Anoop Kumar

2017-08-01

The present work reports the utilization of a relatively simple, cost effective sol-gel technique based route to synthesize highly transparent, spin coated 4.1 at% Al+3 doped MgO thin films on quartz substrates. The films were characterized by XRD, XPS, Raman spectroscopy, and SIMS techniques. The microstructures were characterized by FESEM and TEM while the nanomechanical properties were assessed by the nanoindentation technique. Finally the optical transmittance was measured by UV-vis technique. The x-ray diffraction (XRD) study suggests the crystal facet (2 0 0) of MgO lattice to be distorted after incorporation of Al+3 into MgO lattice. From FESEM the doped films were found to have a dense microstructure with a crystallite size of about 20 nm as revealed by the TEM studies. Nanoindentation measurements indicated drastic increase of elastic modulus for the Al+3 doped MgO thin films by ~73% compared to that of the pristine MgO thin films along with retaining the nanohardness at ~8 GPa. The transmittance of Al+3 doped MgO thin films in the visible range was significantly higher (~99%) than that of pristine MgO (~90%) thin films. The films also had a relatively higher refractive index of about 1.45 as evaluated from the optical properties. The enhanced transmittance as well as the improved elastic modulus of Al+3 doped MgO thin films suggest its promising candidature in magnetic memory devices and as buffer layers of solar cells.

Feasibilty of a Multi-bit Cell Perpendicular Magnetic Tunnel Junction Device

NASA Astrophysics Data System (ADS)

Kim, Chang Soo

The ultimate objective of this research project was to explore the feasibility of making a multi-bit cell perpendicular magnetic tunnel junction (PMTJ) device to increase the storage density of spin-transfer-torque random access memory (STT-RAM). As a first step toward demonstrating a multi-bit cell device, this dissertation contributed a systematic and detailed study of developing a single cell PMTJ device using L10 FePt films. In the beginning of this research, 13 up-and-coming non-volatile memory (NVM) technologies were investigated and evaluated to see whether one of them might outperform NAND flash memories and even HDDs on a cost-per-TB basis in 2020. This evaluation showed that STT-RAM appears to potentially offer superior power efficiency, among other advantages. It is predicted that STTRAM's density could make it a promising candidate for replacing NAND flash memories and possibly HDDs if STTRAM could be improved to store multiple bits per cell. Ta/Mg0 under-layers were used first in order to develop (001) L1 0 ordering of FePt at a low temperature of below 400 °C. It was found that the tradeoff between surface roughness and (001) L10 ordering of FePt makes it difficult to achieve low surface roughness and good perpendicular magnetic properties simultaneously when Ta/Mg0 under-layers are used. It was, therefore, decided to investigate MgO/CrRu under-layers to simultaneously achieve smooth films with good ordering below 400°C. A well ordered 4 nm L10 FePt film with RMS surface roughness close to 0.4 nm, perpendicular coercivity of about 5 kOe, and perpendicular squareness near 1 was obtained at a deposition temperature of 390 °C on a thermally oxidized Si substrate when MgO/CrRu under-layers are used. A PMTJ device was developed by depositing a thin MgO tunnel barrier layer and a top L10 FePt film and then being postannealed at 450 °C for 30 minutes. It was found that the sputtering power needs to be minimized during the thin MgO tunnel barrier

Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics

NASA Astrophysics Data System (ADS)

Knoll, L.; Richter, S.; Nichau, A.; Trellenkamp, S.; Schäfer, A.; Wirths, S.; Blaeser, S.; Buca, D.; Bourdelle, K. K.; Zhao, Q.-T.; Mantl, S.

2014-08-01

Electrical characteristics of silicon nanowire tunnel field effect transistors (TFETs) are presented and benchmarked versus other concepts. Particular emphasis is placed on the band to band tunneling (BTBT) junctions, the functional core of the device. Dopant segregation from ion implanted ultrathin silicide contacts is proved as a viable method to achieve steep tunneling junctions. This reduces defect generation by direct implantation into the junction and thus minimizes the risk of trap assisted tunneling. The method is applied to strained silicon, specifically to nanowire array transistors, enabling the realization of n-type and p-type TFETs with fairly high currents and complementary TFET inverters with sharp transitions and good static gain, even at very low drain voltages of VDD = 0.2 V. These achievements suggest a considerable potential of TFETs for ultralow power applications. Gate-all-around Si nanowire array p-type TFETs have been fabricated to demonstrate the impact of electrostatic control on the device performance. A high on-current of 78 μA/μm at VD = VG = 1.1 V is obtained.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE PAGES

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; ...

2018-02-13

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.

Perpendicular magnetic tunnel junctions with GdO X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here we investigate the quality of the GdO X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence includingmore » sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.« less

Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

NASA Astrophysics Data System (ADS)

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

2015-03-01

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Experimental demonstration of single electron transistors featuring SiO{sub 2} plasma-enhanced atomic layer deposition in Ni-SiO{sub 2}-Ni tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karbasian, Golnaz, E-mail: Golnaz.Karbasian.1@nd.edu; McConnell, Michael S.; Orlov, Alexei O.

The authors report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin (≈1 nm) tunnel-transparent SiO{sub 2} in Ni-SiO{sub 2}-Ni tunnel junctions. They show that, as a result of the O{sub 2} plasma steps in PEALD of SiO{sub 2}, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO{sub 2}, most likely as a result of oxygen-containing species on the surface of the SiO{sub 2}. Due to the presence of these surface parasitic layersmore » of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO{sub 2}-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultrathin barriers. Using this technique, the authors successfully fabricated MIM SETs with minimal trace of parasitic NiO component. They demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions (with <10{sup −15} m{sup 2} in area) can be evaluated by electrical characterization of SETs.« less

Self-Organized Defects of Half-Metallic Nanowires in MgO-Based Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Seike, Masayoshi; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

2013-03-01

The purpose of this study is to examine the possibility of self-organization of defects and defect-induced properties in MgO-based magnetic tunnel junctions (MTJs). Using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional, first-principles calculations were performed to estimate the electronic structures and total energies of MgO with various defects. From our thorough evaluation of the calculated results and previously reported experimental data, we propose that self-organized half-metallic nanowires of magnesium vacancies can be formed in MgO-based MTJs. This self-organization may provide the foundation for a comprehensive understanding of the conductivity, tunnel barriers and quantum oscillations of MgO-based MTJs. Further experimental verification is needed before firm conclusions can be drawn.

Spectroscopic, thermal, and electrical properties of MgO/ polyvinyl pyrrolidone/ polyvinyl alcohol nanocomposites

NASA Astrophysics Data System (ADS)

Mohammed, Gh.; El Sayed, Adel M.; Morsi, W. M.

2018-04-01

In this study, we aimed to control the optical and electrical properties of polyvinyl alcohol (PVA) in order to broaden its industrial and technological applications, which we achieved by blending PVA with polyvinyl pyrrolidone (PVP) and adding sol-gel prepared MgO nanopowder. The blended film and nanocomposite films were prepared using the solution casting technique. X-ray diffraction analyses showed that the crystallite size was ∼18.4 nm for MgO and the highest degree of crystallinity (XC) in the films was about 24.34% at 1.0 wt% MgO. High resolution transmission electron microscopy determined the nanoribbon morphology of MgO. Scanning electron microscopy (SEM) indicated the uniform distribution of the MgO nanoribbons on the surfaces of the PVA/PVP films. SEM and Fourier transform infrared spectroscopy also confirmed the interaction between the blend and MgO fillers. The effects of the additives on the glass transition (Tg) and melting (Tm) temperatures were evaluated by differential thermal analysis and differential scanning calorimetry. The appearance of one melting point confirmed the miscibility of the two polymers. According to ultraviolet-visible-near infrared spectroscopy measurements, the optical properties and optical constants of PVA could be adjusted by the addition of PVP and MgO, where the optical band gap (Eg) determined for PVA increased with the PVP content, whereas it decreased to 4.8 eV as the MgO content increased. The DC conductivity (σdc) of the films increased whereas the activation energy (Ea) decreased after the addition of MgO, possibly because the nanoribbon shape fixed the preferred conducting pathways. In addition, MgO could break the H-bond in sbnd OH groups of the blends to allow the free movement of the molecular chains.

Magnetic tunnel spin injectors for spintronics

NASA Astrophysics Data System (ADS)

Wang, Roger

Research in spin-based electronics, or "spintronics", has a universal goal to develop applications for electron spin in a broad range of electronics and strives to produce low power nanoscale devices. Spin injection into semiconductors is an important initial step in the development of spintronic devices, with the goal to create a highly spin polarized population of electrons inside a semiconductor at room temperature for study, characterization, and manipulation. This dissertation investigates magnetic tunnel spin injectors that aim to meet the spin injection requirements needed for potential spintronic devices. Magnetism and spin are inherently related, and chapter 1 provides an introduction on magnetic tunneling and spintronics. Chapter 2 then describes the fabrication of the spin injector structures studied in this dissertation, and also illustrates the optical spin detection technique that correlates the measured electroluminescence polarization from quantum wells to the electron spin polarization inside the semiconductor. Chapter 3 reports the spin injection from the magnetic tunnel transistor (MTT) spin injector, which is capable of producing highly spin polarized tunneling currents by spin selective scattering in its multilayer structure. The MTT achieves ˜10% lower bound injected spin polarization in GaAs at 1.4 K. Chapter 4 reports the spin injection from CoFe-MgO(100) tunnel spin injectors, where spin dependent tunneling through MgO(100) produces highly spin polarized tunneling currents. These structures achieve lower bound spin polarizations exceeding 50% at 100 K and 30% in GaAs at 290 K. The CoFe-MgO spin injectors also demonstrate excellent thermal stability, maintaining high injection efficiencies even after exposure to temperatures of up to 400 C. Bias voltage and temperature dependent studies on these structures indicate a significant dependence of the electroluminescence polarization on the spin and carrier recombination lifetimes inside the

A novel approach for arsenic adsorbents regeneration using MgO.

PubMed

Tresintsi, Sofia; Simeonidis, Konstantinos; Katsikini, Maria; Paloura, Eleni C; Bantsis, Georgios; Mitrakas, Manassis

2014-01-30

An integrated procedure for the regeneration of iron oxy-hydroxide arsenic adsorbents by granulated MgO is proposed in this study. A continuous recirculation configuration, with a NaOH solution flowing sequentially through the saturated adsorbent (leaching step) and the MgO (adsorption step) column beds, was optimized by utilizing the high arsenic adsorption efficiency of MgO at strong alkaline environments. Experimental results indicated that the total amount of leached arsenic was captured by MgO whereas the regenerated iron oxy-hydroxide recovered around 80% of its removal capacity upon reuse. The improved adsorption capacity of MgO for As(V), which is maximized at pH 10, is explained by the intermediate hydration to Mg(OH)2 and the following As(V) oxy-anions adsorption on its surface through the formation of monodentate inner sphere complexes, as it is deduced from the AsK-edge X-ray absorption fine structure (EXAFS) analysis. In addition to the economical-benefits, corresponding tests proved that the solid wastes of this process, namely spent MgO/Mg(OH)2, can be environmentally safely disposed as stable additives in cement products, while the alkaline solution is completely detoxified and can be recycled to the regeneration task. Copyright © 2013 Elsevier B.V. All rights reserved.

Structure, magnetic ordering, and spin filtering efficiency of NiFe{sub 2}O{sub 4}(111) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matzen, S.; Moussy, J.-B., E-mail: jean-baptiste.moussy@cea.fr; Wei, P.

2014-05-05

NiFe{sub 2}O{sub 4}(111) ultrathin films (3–5 nm) have been grown by oxygen-assisted molecular beam epitaxy and integrated as effective spin-filter barriers. Structural and magnetic characterizations have been performed in order to investigate the presence of defects that could limit the spin filtering efficiency. These analyses have revealed the full strain relaxation of the layers with a cationic order in agreement with the inverse spinel structure but also the presence of antiphase boundaries. A spin-polarization up to +25% has been directly measured by the Meservey-Tedrow technique in Pt(111)/NiFe{sub 2}O{sub 4}(111)/γ-Al{sub 2}O{sub 3}(111)/Al tunnel junctions. The unexpected positive sign and relatively small valuemore » of the spin-polarization are discussed, in comparison with predictions and previous indirect tunnelling magnetoresistance measurements.« less

Zero temperature coefficient of resistance of the electrical-breakdown path in ultrathin hafnia

NASA Astrophysics Data System (ADS)

Zhang, H. Z.; Ang, D. S.

2017-09-01

The recent widespread attention on the use of the non-volatile resistance switching property of a microscopic oxide region after electrical breakdown for memory applications has prompted basic interest in the conduction properties of the breakdown region. Here, we report an interesting crossover from a negative to a positive temperature dependence of the resistance of a breakdown region in ultrathin hafnia as the applied voltage is increased. As a consequence, a near-zero temperature coefficient of resistance is obtained at the crossover voltage. The behavior may be modeled by (1) a tunneling-limited transport involving two farthest-spaced defects along the conduction path at low voltage and (2) a subsequent transition to a scattering-limited transport after the barrier is overcome by a larger applied voltage.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

PubMed

Wang, Ying; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-09-11

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

PubMed Central

Wang, Ying; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-01-01

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted. PMID:28788196

Experimental Work Conducted on MgO Inundated Hydration in WIPP-Relevant Brines

NASA Astrophysics Data System (ADS)

Deng, H.; Xiong, Y.; Nemer, M. B.; Johnsen, S.

2009-12-01

Magnesium oxide (MgO) is being emplaced in the Waste Isolation Pilot Plant (WIPP) as an engineered barrier to mitigate the effect of microbial CO2 generation on actinide mobility in a postclosure repository environment. MgO will sequester CO2 and consume water in brine or water vapor in the gaseous phase. Martin Marietta (MM) MgO is currently being emplaced in the WIPP. A fractional-factorial experiment has been performed to study the inundated-hydration of MM MgO as a function of its particle size, solid-to-liquid ratio, and brine type. MgO hydration experiments have been carried out with three MgO particle sizes and two solid-to-liquid ratios in three WIPP-related brines: ERDA-6, GWB and simplified GWB. ERDA-6 is a synthetic NaCl-rich brine typical of a Castile brine reservoir below the repository. GWB is a synthetic MgCl2- and NaCl-rich brine representative of intergranular brines from the Salado Formation at or near the stratigraphic horizon of the repository. Simplified GWB contains amounts of Mg, Na, and Cl similar to those in GWB without other minor constituents. The hydration products include brucite (Mg(OH)2) and phase 5 (Mg3(OH)5Cl4H2O). In addition to phase 5, MgO hydration in GWB or simplified GWB produces brucite, whereas MgO hydrated in ERDA-6 only produces brucite. The MgO particle size has had a significant effect on the formation of hydration products: small MgO particles have hydrated before the large particles. MgO has hydrated faster in simplified GWB than in the other two brines. In ERDA-6, the solid-to-liquid ratio has affected the brine pH due to the presence of CaO (~1 wt %) as an impurity in MM MgO. GWB has sufficient dissolved Mg to buffer pH despite small amounts of CaO. Both our results and thermodynamic modeling indicate that phase-5 is the stable Mg-OH-Cl phase in Mg-Na-Cl-dominated brines with ionic strengths and chemical compositions similar to that of GWB. In contrast, phase-3 (Mg2(OH)3Cl4H2O) is the stable phase in the MgCl2

Interstitial Fe in MgO

NASA Astrophysics Data System (ADS)

Mølholt, T. E.; Mantovan, R.; Gunnlaugsson, H. P.; Svane, A.; Masenda, H.; Naidoo, D.; Bharuth-Ram, K.; Fanciulli, M.; Gislason, H. P.; Johnston, K.; Langouche, G.; Ólafsson, S.; Sielemann, R.; Weyer, G.

2014-01-01

Isolated 57Fe atoms were studied in MgO single-crystals by emission Mössbauer spectroscopy following implantation of 57Mn decaying to 57Fe. Four Mössbauer spectral components were found corresponding to different Fe lattice positions and/or charge states. Two components represent Fe atoms substituting Mg as Fe2+ and Fe3+, respectively; a third component is due to Fe in a strongly implantation-induced disturbed region. The fourth component, which is the focus of this paper, can be assigned to Fe at an interstitial site. Comparison of its measured isomer shift with ab initio calculations suggests that the interstitial Fe is located on, or close to, the face of the rock-salt MgO structure. To harmonize such an assignment with the measured near-zero quadrupole interaction a local motion process (cage motion) of the Fe has to be stipulated. The relation of such a local motion as a starting point for long range diffusion is discussed.

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

NASA Astrophysics Data System (ADS)

Wang, D. D.; Chen, Z. Q.; Li, C. Y.; Li, X. F.; Cao, C. Y.; Tang, Z.

2012-07-01

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.

Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, H. W.; Yang, J.; Li, Y. H.

2015-03-02

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

NASA Astrophysics Data System (ADS)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

2015-12-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials.

PubMed

Tan, Chaoliang; Cao, Xiehong; Wu, Xue-Jun; He, Qiyuan; Yang, Jian; Zhang, Xiao; Chen, Junze; Zhao, Wei; Han, Shikui; Nam, Gwang-Hyeon; Sindoro, Melinda; Zhang, Hua

2017-05-10

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.

Dependence of magnetic anisotropy on MgO sputtering pressure in Co20Fe60B20/MgO stacks

NASA Astrophysics Data System (ADS)

Kaidatzis, A.; Serletis, C.; Niarchos, D.

2017-10-01

We investigated the dependence of magnetic anisotropy of Ta/Co20Fe60B20/MgO stacks on the Ar partial pressure during MgO deposition, in the range between 0.5 and 15 mTorr. The stacks are studied before and after annealing at 300°C and it is shown that magnetic anisotropy significantly depends on Ar partial pressure. High pressure results in stacks with very low perpendicular magnetic anisotropy even after annealing, while low pressure results in stacks with perpendicular anisotropy even at the as-deposited state. A monotonic increase of magnetic anisotropy energy is observed as Ar partial pressure is decreased.

Fundamental limits of ultrathin metasurfaces

PubMed Central

Arbabi, Amir; Faraon, Andrei

2017-01-01

We present a set of universal relations which relate the local transmission, reflection, and polarization conversion coefficients of a general class of non-magnetic passive ultrathin metasurfaces. We show that these relations are a result of equal forward and backward scattering by single layer ultrathin metasurfaces, and they lead to confinement of the transmission, reflection, and polarization conversion coefficients to limited regions of the complex plane. Using these relations, we investigate the effect of the presence of a substrate, and show that the maximum polarization conversion efficiency for a transmissive metasurface decreases as the refractive index contrast between the substrate and cladding layer increases. Furthermore, we demonstrate that a single layer reflective metasurface can achieve full 2π phase shift coverage without altering the polarization if it is illuminated from the higher refractive index material. We also discuss two approaches for achieving asymmetric scattering from metasurfaces, and realizing metasurfaces which overcome the performance limitations of single layer ultrathin metasurfaces. PMID:28262739

Pulsed laser deposition of YBCO films on ISD MgO buffered metal tapes

NASA Astrophysics Data System (ADS)

Ma, B.; Li, M.; Koritala, R. E.; Fisher, B. L.; Markowitz, A. R.; Erck, R. A.; Baurceanu, R.; Dorris, S. E.; Miller, D. J.; Balachandran, U.

2003-04-01

Biaxially textured magnesium oxide (MgO) films deposited by inclined-substrate deposition (ISD) are desirable for rapid production of high-quality template layers for YBCO-coated conductors. High-quality YBCO films were grown on ISD MgO buffered metallic substrates by pulsed laser deposition (PLD). Columnar grains with a roof-tile surface structure were observed in the ISD MgO films. X-ray pole figure analysis revealed that the (002) planes of the ISD MgO films are tilted at an angle from the substrate normal. A small full-width at half maximum (FWHM) of approx9° was observed in the phi-scan for ISD MgO films deposited at an inclination angle of 55°. In-plane texture in the ISD MgO films developed in the first approx0.5 mum from the substrate surface, and then stabilized with further increases in film thickness. Yttria-stabilized zirconia and ceria buffer layers were deposited on the ISD MgO grown on metallic substrates prior to the deposition of YBCO by PLD. YBCO films with the c-axis parallel to the substrate normal have a unique orientation relationship with the ISD MgO films. An orientation relationship of YBCOlangle100rangleparallelMgOlangle111rangle and YBCOlangle010rangleparallelMgOlangle110rangle was measured by x-ray pole figure analyses and confirmed by transmission electron microscopy. A Tc of 91 K with a sharp transition and transport Jc of 5.5 × 105 A cm-2 at 77 K in self-field were measured on a YBCO film that was 0.46 mum thick, 4 mm wide and 10 mm long.

Electrochemical Corrosion Properties of Commercial Ultra-Thin Copper Foils

NASA Astrophysics Data System (ADS)

Yen, Ming-Hsuan; Liu, Jen-Hsiang; Song, Jenn-Ming; Lin, Shih-Ching

2017-08-01

Ultra-thin electrodeposited Cu foils have been developed for substrate thinning for mobile devices. Considering the corrosion by residual etchants from the lithography process for high-density circuit wiring, this study investigates the microstructural features of ultra-thin electrodeposited Cu foils with a thickness of 3 μm and their electrochemical corrosion performance in CuCl2-based etching solution. X-ray diffraction and electron backscatter diffraction analyses verify that ultra-thin Cu foils exhibit a random texture and equi-axed grains. Polarization curves show that ultra-thin foils exhibit a higher corrosion potential and a lower corrosion current density compared with conventional (220)-oriented foils with fan-like distributed fine-elongated columnar grains. Chronoamperometric results also suggest that ultra-thin foils possess superior corrosion resistance. The passive layer, mainly composed of CuCl and Cu2O, forms and dissolves in sequence during polarization.

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Cheng, Ruiqing; Wang, Feng; Yin, Lei; Xu, Kai; Ahmed Shifa, Tofik; Wen, Yao; Zhan, Xueying; Li, Jie; Jiang, Chao; Wang, Zhenxing; He, Jun

2017-04-01

The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two-dimensional layered materials (2DLMs) have attracted considerable attention due to their superb properties. As a typical structure, graphene/hexagonal boron nitride (h-BN)/graphene vdWH has been proved possible to make tunneling devices. Compared with graphene, transition metal dichalcogenides possess intrinsic bandgap, leading to high performance of electronic devices. Here, tunneling devices based on graphene/h-BN/MoSe2 vdWHs are designed for multiple functions. On the one hand, the device shows a typical tunneling field-effect transistor behavior. A high on/off ratio of tunneling current (5 × 103) and an ultrahigh current rectification ratio (7 × 105) are achieved, which are attributed to relatively small electronic affinity of MoSe2 and optimized thickness of h-BN. On the other hand, the same structure also realizes 2D non-volatile memory with a high program/erase current ratio (>105), large memory window (˜150 V from ±90 V), and good retention characteristic. These results could enhance the fundamental understanding of tunneling behavior in vdWHs and contribute to the design of ultrathin rectifiers and memory based on 2DLMs.

Grain boundary mobility in anion doped MgO

NASA Technical Reports Server (NTRS)

Kapadia, C. M.; Leipold, M. H.

1973-01-01

Certain anions OH(-), F(-) and Gl(-) are shown to enhance grain growth in MgO. The magnitude of their effect decreases in the order in which the anions are listed and depends on their location (solid-solution, second phase) in the MgO lattice. As most anions exhibit relatively high vapor pressures at sintering temperatures, they retard densification and invariably promote residual porosity. The role of anions on grain growth rates was studied in relation to their effect on pore mobility and pore removal; the atomic process controlling the actual rates was determined from observed kinetics in conjunction with the microstructural features. With respect to controlling mechanisms, the effects of all anions are not the same. OH(-) and F(-) control behavior through creation of a defect structure and a grain boundary liquid phase while Cl(-) promotes matter transport within pores by evaporation-condensation. Studies on an additional anion, S to the minus 2nd power gave results which were no different from undoped MgO, possibly because of evaporative losses during hot pressing. Hence, the effect of sulphur is negligible or undetermined.

Wavelength-selective thermal emitters using Si-rods on MgO

NASA Astrophysics Data System (ADS)

Suemitsu, Masahiro; Asano, Takashi; De Zoysa, Menaka; Noda, Susumu

2018-01-01

Supporting substrates for Si rod-type photonic crystals (PCs) are investigated for realizing highly wavelength-selective near-infrared thermal emitters. Three materials—SiO2, Al2O3, and MgO—are considered for their low infrared emission (transparency) and remarkable heat resistance. Theoretical calculations of the emissivity spectra of Si-rod PCs (rod height = 500 nm, rod diameter = 300 nm, and lattice constant = 600 nm) on 50 μm-thick supporting substrates at 1400 K indicate that the long-wavelength (>3 μm) emission power from the emitter using MgO is less than 1/10 of that of the other two materials. Fabrication of the Si-rod PCs on the 50 μm-thick MgO substrate requires the insertion of a thin (30 nm) HfO2 film between MgO and Si to improve the stability at high temperatures (>1400 K). Experimental results of the fabricated structure show that at 1400 K, the ratio of emissive power at wavelengths <1.8 μm to the total emissive power is 34% and that this can be increased to over 53% in an optimized rod-array structure with a 10 μm-thick MgO substrate.

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.

PubMed

Wong, Dillon; Velasco, Jairo; Ju, Long; Lee, Juwon; Kahn, Salman; Tsai, Hsin-Zon; Germany, Chad; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

2015-11-01

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but such single-defect electronic characterization remains an elusive goal for intrinsic bulk insulators. Here, we show that individual native defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipulated using a scanning tunnelling microscope. This would typically be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomically thin nature of graphene to allow the visualization of defect phenomena in the underlying bulk boron nitride. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunnelling spectroscopy we obtain charge and energy-level information for these boron nitride defect structures. We also show that it is possible to manipulate the defects through voltage pulses applied to the scanning tunnelling microscope tip.

Tuning the properties of an MgO layer for spin-polarized electron transport

NASA Astrophysics Data System (ADS)

Zhao, Chong-Jun; Ding, Lei; Zhao, Zhi-Duo; Zhang, Peng; Cao, Xing-Zhong; Wang, Bao-Yi; Zhang, Jing-Yan; Yu, Guang-Hua

2014-08-01

The influence of substrate temperature and annealing on quality/microstructural evolution of MgO, as well as the resultant magnetoresistance (MR) ratio, has been investigated. It has been found that the crystallinity of MgO in the MgO/NiFe/MgO heterostructures gradually improves with increasing substrate temperature. This behavior facilitates the transport of spin-polarized electrons, resulting in a high MR value. After annealing, the formation of vacancy clusters in MgO layers observed through positron annihilation spectroscopy leads to an increase in MR at different levels because of the crystallinity improvement of MgO. However, these vacancy clusters as another important defect can limit further improvement in MR.

Asymmetric angular dependence of spin-transfer torques in CoFe/Mg-B-O/CoFe magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Ling, E-mail: lingtang@zjut.edu.cn; Xu, Zhi-Jun, E-mail: xzj@zjut.edu.cn; Zuo, Xian-Jun

Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg{sub 3}BO{sub 4}), B atoms replacing O atoms (Mg{sub 4}BO{sub 3}), and B atoms occupying interstitial positions (Mg{sub 4}BO{sub 4}) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg{sub 3}BO{sub 4} and CoFe/Mg{sub 4}BO{sub 4} based MTJs, whereas a nearly symmetric STT curve is observed in the junctions based on CoFe/Mg{sub 4}BO{sub 3}. Furthermore, the asymmetry ofmore » the angular dependence of STT can be suppressed significantly by the disorder of B distribution. Such skewness of STTs in the CoFe/Mg-B-O/CoFe MTJs could be attributed to the interfacial resonance states induced by the B diffusion into MgO spacer.« less

Regenerable MgO promoted metal oxide oxygen carriers for chemical looping combustion

DOEpatents

Siriwardane, Ranjani V.; Miller, Duane D.

2014-08-19

The disclosure provides an oxygen carrier comprised of a plurality of metal oxide particles in contact with a plurality of MgO promoter particles. The MgO promoter particles increase the reaction rate and oxygen utilization of the metal oxide when contacting with a gaseous hydrocarbon at a temperature greater than about 725.degree. C. The promoted oxide solid is generally comprised of less than about 25 wt. % MgO, and may be prepared by physical mixing, incipient wetness impregnation, or other methods known in the art. The oxygen carrier exhibits a crystalline structure of the metal oxide and a crystalline structure of MgO under XRD crystallography, and retains these crystalline structures over subsequent redox cycles. In an embodiment, the metal oxide is Fe.sub.2O.sub.3, and the gaseous hydrocarbon is comprised of methane.

Terahertz carpet cloak based on ultrathin metasurface

NASA Astrophysics Data System (ADS)

Wei, Minggui; Yang, Quanlong; Zhang, Xueqian; Li, Yanfeng; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2018-01-01

Ultrathin metasurfaces with local phase compensation deliver new schemes to cloaking devices. We demonstrate a remarkable large size carpet cloak realized by an ultrathin metasurface at terahertz frequencies. The metasurface cloak is constructed by periodically arranging 12 different elements. The reflected wave front is perfectly reconstructed by an ultrathin metasurface cloak, which perform well under both intensity-sensitive and phase-sensitive detectors. The invisibility is verified when the cloak is placed on a reflecting triangular surface (bump). The multi-step discrete phase design method would greatly simplify the design process and is probable to achieve large-dimension cloaks, for applications in radar and antenna systems as a thin and easy-to-fabricate solution for radio and terahertz frequencies.

Investigation on the formation process of single-crystalline GaO x barrier in Fe/GaO x /MgO/Fe magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Krishna, N. S.; Doko, N.; Matsuo, N.; Saito, H.; Yuasa, S.

2017-11-01

We have grown Fe(0 0 1)/GaO x (0 0 1)/MgO(0 0 1)/Fe(0 0 1) magnetic tunnel junctions (MTJs) with or without in situ annealing after the deposition of GaO x layer and performed structural characterizations by focusing on the formation process of the single-crystalline GaO x . It was found that, even without the in situ annealing, the as-grown GaO x grown on the MgO was mostly single-crystalline except near the surface region (amorphous). The crystallization temperature of the amorphous region was reduced from 500 °C down to 250 °C by depositing the Fe upper electrode (poly-crystalline). It was clarified that the crystallization of the amorphous region near the Fe/GaO x interface caused the realignments of the crystal grains in the poly-crystalline Fe upper electrode, and, as a result, the fully epitaxial Fe/GaO x /MgO/Fe structure is eventually formed. All the MTJs showed high tunneling magnetoresistance ratios (about 100%) at room temperature, which was almost independent of the formation temperature of the single-crystalline GaO x .

Ultrathin 2D Photocatalysts: Electronic-Structure Tailoring, Hybridization, and Applications.

PubMed

Di, Jun; Xiong, Jun; Li, Huaming; Liu, Zheng

2018-01-01

As a sustainable technology, semiconductor photocatalysis has attracted considerable interest in the past several decades owing to the potential to relieve or resolve energy and environmental-pollution issues. By virtue of their unique structural and electronic properties, emerging ultrathin 2D materials with appropriate band structure show enormous potential to achieve efficient photocatalytic performance. Here, the state-of-the-art progress on ultrathin 2D photocatalysts is reviewed and a critical appraisal of the classification, controllable synthesis, and formation mechanism of ultrathin 2D photocatalysts is presented. Then, different strategies to tailor the electronic structure of ultrathin 2D photocatalysts are summarized, including component tuning, thickness tuning, doping, and defect engineering. Hybridization with the introduction of a foreign component and maintaining the ultrathin 2D structure is presented to further boost the photocatalytic performance, such as quantum dots/2D materials, single atoms/2D materials, molecular/2D materials, and 2D-2D stacking materials. More importantly, the advancement of versatile photocatalytic applications of ultrathin 2D photocatalysts in the fields of water oxidation, hydrogen evolution, CO 2 reduction, nitrogen fixation, organic syntheses, and removal pollutants is discussed. Finally, the future opportunities and challenges regarding ultrathin 2D photocatalysts to bring about new opportunities for future research in the field of photocatalysis are also presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermodynamics of MgO shocked to 250 GPa and 9000 K

NASA Astrophysics Data System (ADS)

Fat'yanov, O. V.; Asimow, P. D.; Ahrens, T. J.

2011-06-01

Plate impact experiments in the 200-250 GPa pressure range were done on <100 > single-crystal MgO preheated before compression to 1850 K. Hot Mo(driver)-MgO targets were impacted with Ta flyers launched by the Caltech two-stage light-gas gun up to 7.5 km/s. Radiative temperatures and shock velocities were measured with 3-5% and 1-2% respective uncertainty by a 6-channel pyrometer with 3 ns time resolution, over 500-900 nm spectral range. MgO shock front reflectivity was determined in additional experiments at 220 and 250 GPa using 50/50 high-temperature sapphire beamsplitters. Shock temperatures and preheated MgO Hugoniot data reported here are in good agreement with the corresponding values calculated using Mie-Grüneisen equation of state with γ0 = 1.4 and constant γ / V . Our experiments showed no evidence of MgO melting up to 250 GPa and 9.2 kK. The highest shock temperatures exceed the extrapolated melting curve of Zerr & Boehler by >3000 K at 250 GPa, which seems too much for any realistic superheating.

First stage of reaction of molten Al with MgO substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgiel, J., E-mail: j.morgiel@imim.pl; Sobczak, N.; Motor Transport Institute, 80 Jagiellońska St., 03-301 Warsaw

The Al/MgO couple was produced in vacuum (~ 5 × 10{sup −} {sup 4} Pa) by contact heating from RT up to 1000 °C and holding at that temperature for 1 h of a small 4 × 4 × 4 mm aluminium (5 N) sample placed on the [100] MgO single crystal substrate. TEM observations backed with electron diffraction analysis indicated that the interaction between liquid aluminium and MgO starts from a redox reaction producing a continuous layer of MgAl{sub 2}O{sub 4} spinel on the substrate surface. Its growth is controlled by solid state out-diffusion of magnesium and oxygen towardsmore » the surface being in contact with liquid metal. The thickening of spinel layer is accompanied by its cracking and infiltration with aluminium. The above process enables local dissolution of the MgO substrate and formation in it of a thin region of interpenetrating metallic channels walled with spinel. The removal of dissolved magnesium through open aluminium channels towards the drop and to vacuum locally produces areas of aluminium enriched with dissolved oxygen, which results in the nucleation of α-Al{sub 2}O{sub 3} at spinel clad walls. The growth of α-Al{sub 2}O{sub 3} is controlled only by the dissolution rate of MgO by aluminium, liquid state diffusion of Mg to drop/vacuum and oxygen to the front of the of α-Al{sub 2}O{sub 3} crystallites growing into MgO substrate. - Highlights: • New unique evidence of first stages of interaction of liquid Al with MgO substrates • Interaction of liquid Al with MgO starts with the formation of a layer MgAl{sub 2}O{sub 4}. • Growth of MgAl{sub 2}O{sub 4} is slow as controlled by solid state out-diffusion of Mg and O. • MgAl{sub 2}O{sub 4} serves as a nucleation site for Al{sub 2}O{sub 3} and consumed by it soon after. • Growth of Al{sub 2}O{sub 3} is fast as controlled by diffusion in liquid state.« less

Impact of geometric, thermal and tunneling effects on nano-transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Langhua; Chen, Duan, E-mail: dchen10@uncc.edu; Wei, Guo-Wei

Electronic transistors are fundamental building blocks of large scale integrated circuits in modern advanced electronic equipments, and their sizes have been down-scaled to nanometers. Modeling and simulations in the framework of quantum dynamics have emerged as important tools to study functional characteristics of these nano-devices. This work explores the effects of geometric shapes of semiconductor–insulator interfaces, phonon–electron interactions, and quantum tunneling of three-dimensional (3D) nano-transistors. First, we propose a two-scale energy functional to describe the electron dynamics in a dielectric continuum of device material. Coupled governing equations, i.e., Poisson–Kohn–Sham (PKS) equations, are derived by the variational principle. Additionally, it ismore » found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section offers the largest channel current, which indicates that ultra-thin nanotransistors may not be very efficient in practical applications. Moreover, we introduce a new method to evaluate quantum tunneling effects in nanotransistors without invoking the comparison of classical and quantum predictions. It is found that at a given channel cross section area and gate voltage, the geometry that has the smallest perimeter of the channel cross section has the smallest quantum tunneling ratio, which indicates that geometric defects can lead to higher geometric confinement and larger quantum tunneling effect. Furthermore, although an increase in the phonon–electron interaction strength reduces channel current, it does not have much impact to the quantum tunneling ratio. Finally, advanced numerical techniques, including second order elliptic interface methods, have been applied to ensure computational accuracy and reliability of the present PKS simulation.« less

Tunable reactivity of supported single metal atoms by impurity engineering of the MgO(001) support.

PubMed

Pašti, Igor A; Johansson, Börje; Skorodumova, Natalia V

2018-02-28

Development of novel materials may often require a rational use of high price components, like noble metals, in combination with the possibility to tune their properties in a desirable way. Here we present a theoretical DFT study of Au and Pd single atoms supported by doped MgO(001). By introducing B, C and N impurities into the MgO(001) surface, the interaction between the surface and the supported metal adatoms can be adjusted. Impurity atoms act as strong binding sites for Au and Pd adatoms and can help to produce highly dispersed metal particles. The reactivity of metal atoms supported by doped MgO(001), as probed by CO, is altered compared to their counterparts on pristine MgO(001). We find that Pd atoms on doped MgO(001) are less reactive than on perfect MgO(001). In contrast, Au adatoms bind CO much more strongly when placed on doped MgO(001). In the case of Au on N-doped MgO(001) we find that charge redistribution between the metal atom and impurity takes place even when not in direct contact, which enhances the interaction of Au with CO. The presented results suggest possible ways for optimizing the reactivity of oxide supported metal catalysts through impurity engineering.

Bulk and surface electronic structures of MgO

NASA Astrophysics Data System (ADS)

Schönberger, U.; Aryasetiawan, F.

1995-09-01

The bulk electronic structure of MgO is calculated from first principles including correlation effects within the GW approximation. The band gap, the position of the 2s O band, and the valence band width are in good agreement with experiment. From the quasiparticle band structure, optical transitions corresponding to the main optical absorption peaks are identified. The energy-loss spectrum is also calculated and compared with experiment. The surface electronic structure of MgO(100) is calculated self-consistently within the local-density approximation. It is found that states observed in a recent photoemission experiment outside the bulk allowed states are close to surface states.

Incipient plasticity and indentation response of MgO surfaces using molecular dynamics

NASA Astrophysics Data System (ADS)

Tran, Anh-Son; Hong, Zheng-Han; Chen, Ming-Yuan; Fang, Te-Hua

2018-05-01

The mechanical characteristics of magnesium oxide (MgO) based on nanoindentation are studied using molecular dynamics (MD) simulation. The effects of indenting speed and temperature on the structural deformation and loading-unloading curve are investigated. Results show that the strained surface of the MgO expands to produce a greater relaxation of atoms in the surroundings of the indent. The dislocation propagation and pile-up for MgO occur more significantly with the increasing temperature from 300 K to 973 K. In addition, with increasing temperature, the high strained atoms with a great perturbation appearing at the groove location.

Transport and spin transfer torques in Fe/MgO/Fe tunnel barriers.

NASA Astrophysics Data System (ADS)

Heiliger, Christian

2008-03-01

The prediction of very high tunneling magnetoresistance (TMR) ratios in crystalline Fe/MgO/Fe [1,2] tunnel junctions has been verified by a number of experiments [3,4]. The high TMR can be understood in terms of the electronic structure of the system. In MgO the δ1 states at the Brillouin zone center decay the most slowly and dominate the tunnelling current. For coherent interfaces, which are achievable due to the small lattice mismatch between Fe and MgO, these δ1 states at the Brillouin zone center are half-metallic in the Fe layers. The dominance of the δ1 states and their half-metallicity cause the high tunnelling magnetoresistance measured in Fe/MgO/Fe tunnel junctions [5]. For the spin transfer torque, we calculate the linear response for small currents and voltages. Our calculations show that the half metallicity of the Fe δ1 states leads to a strong localization of the spin transfer torque to the interface. As a result, the linear current dependence of the torque in the plane of the two magnetizations is independent of the free layer thickness for more than three monolayers of Fe. For perfect samples we also find a linear current dependence of the out-of-plane component. However, this linear piece oscillates rapidly with thickness and averages to zero in the presence of structural imperfections like thickness fluctuation, in agreement with experiment [6]. In this talk I discuss the bias dependence of the TMR and spin transfer torque effects mentioned above and the influence on them of the following factors: the interface structure Fe/MgO, the barrier thickness, and the structure of the leads [7]. This work has been supported in part by the NIST-CNST/UMD-NanoCenter Cooperative Agreement. [1] W. Butler, X.-G. Zhang, T. Schulthess, J. MacLaren, Phys. Rev. B 63 (2001) 054416. [2] J. Mathon, A. Umerski, Phys. Rev. B 63 (2001) 220403. [3] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, Nature Materials 3 (2004) 868. [4] S.S.P. Parkin, C. Kaiser, A

Melting temperatures of MgO under high pressure by micro-texture analysis

PubMed Central

Kimura, T.; Ohfuji, H.; Nishi, M.; Irifune, T.

2017-01-01

Periclase (MgO) is the second most abundant mineral after bridgmanite in the Earth's lower mantle, and its melting behaviour under pressure is important to constrain rheological properties and melting behaviours of the lower mantle materials. Significant discrepancies exist between the melting temperatures of MgO determined by laser-heated diamond anvil cell (LHDAC) and those based on dynamic compressions and theoretical predictions. Here we show the melting temperatures in earlier LHDAC experiments are underestimated due to misjudgment of melting, based on micro-texture observations of the quenched samples. The high melting temperatures of MgO suggest that the subducted cold slabs should have higher viscosities than previously thought, suggesting that the inter-connecting textural feature of MgO would not play important roles for the slab stagnation in the lower mantle. The present results also predict that the ultra-deep magmas produced in the lower mantle are peridotitic, which are stabilized near the core–mantle boundary. PMID:28580945

Ultra-thin plasma panel radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Peter S.

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

Tunnel junctions with multiferroic barriers

NASA Astrophysics Data System (ADS)

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Tunnel junctions with multiferroic barriers.

PubMed

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La(0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Fabrication of Mg-X-O (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yakushiji, K.; Kitagawa, E.; Ochiai, T.; Kubota, H.; Shimomura, N.; Ito, J.; Yoda, H.; Yuasa, S.

2018-05-01

We fabricated magnetic tunnel junctions with a 3d-transition material(X)-doped MgO (Mg-X-O) barrier, and evaluated the effect of the doping on magnetoresistance (MR) and microstructure. Among the variations of X (X = Fe, Co, Ni, Cr, Mn, Ti, V, and Zn), X = Fe and Mn showed a high MR ratio of more than 100%, even at a low resistance-area product of 3 Ωμm2. The microstructure analysis revealed that (001) textured orientation formed for X = Fe and Mn despite substantial doping (about 10 at%). The elemental mappings indicated that Fe atoms in the Mg-Fe-O barrier were segregated at the interfaces, while Mn atoms were evenly involved in the Mg-Mn-O barrier. This suggests that MgO has high adaptability for Fe and Mn dopants in terms of high MR ratio.

Stabilization of arsenic and lead by magnesium oxide (MgO) in different seawater concentrations.

PubMed

Kameda, Kentaro; Hashimoto, Yohey; Ok, Yong Sik

2018-02-01

Ongoing sea level rise will have a major impact on mobility and migration of contaminants by changing a number of natural phenomena that alter geochemistry and hydrology of subsurface environment. In-situ immobilization techniques may be a promising remediation strategy for mitigating contaminant mobility induced by sea level rise. This study investigated the reaction mechanisms of magnesium oxide (MgO) with aqueous Pb and As under freshwater and seawater using XAFS spectroscopy. Initial concentrations of Pb and As in freshwater strongly controlled the characteristics of the reaction product of MgO. Our study revealed that i) the removal of aqueous Pb and As by MgO was increased by the elevation of seawater concentration, and ii) the removal of As was attributed primarily to (inner-sphere) surface adsorption on MgO, independent on seawater concentrations, and iii) the retention mechanism of Pb was dependent on seawater concentrations where formations of Pb oxides and adsorption on the MgO surface were predominant in solutions with low and high salinity, respectively. The release of As fixed with MgO significantly increased in seawater compared to freshwater, although the amount of As desorbed accounted for <0.2% of total As. Copyright © 2017 Elsevier Ltd. All rights reserved.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Biosensors Based on Ultrathin Film Composite Membranes

DTIC Science & Technology

1994-01-25

composite membranes should have a number C •’ of potential advantages including fast response time, simplicity of construction, and applicability to a number...The support membrane for the ultrathin film composite was an Anopore ( Alltech Associates) microporous alumina filter, these membranes are 55 Pm thick...constant 02 concentration in this solution. Finally, one of the most important potential advantage of a sensor based on an ultrathin film composite

Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

PubMed Central

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

Resonant tunneling modulation in quasi-2D Cu(2)O/SnO(2) p-n horizontal-multi-layer heterostructure for room temperature H(2)S sensor application.

PubMed

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu(2)O/SnO(2) p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu(2)O and SnO(2) selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H(2)S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing.

Phase Transitions of MgO Along the Hugoniot (Invited)

NASA Astrophysics Data System (ADS)

Root, S.; Shulenburger, L.; Lemke, R. W.; Cochrane, K. R.; Mattsson, T. R.

2013-12-01

The formation of terrestrial planets and planetary structure has become of great interest because of recent exoplanet discoveries of super earths. MgO is a major constituent of Earth's mantle, the rocky cores of gas giants such as Jupiter, and likely constitutes the interiors of many exoplanets. The high pressure - high temperature behavior of MgO directly affects equation of state models for planetary structure and formation. In this work, we examine single crystal MgO under shock compression utilizing experimental and density functional theory (DFT) methods to determine phase transformations along the Hugoniot. We perform plate impact experiments using Sandia's Z - facility on MgO up to 11.6 Mbar. The plate impact experiments generate highly accurate Hugoniot state data. The experimental results show the B1 - B2 solid - solid phase transition occurs near 4 Mbar on the Hugoniot. The solid - liquid transition is determined to be near 7 Mbar with a large region of B2-liquid coexistence. Using DFT methods, we also determine melt along the B1 and B2 solid phase boundaries as well as along the Hugoniot. The combined experimental and DFT results have determined the phase boundaries along the Hugoniot, which can be implemented into new planetary and EOS models. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Securities Administration under Contract No. DE-AC04-94AL85000.

Ultrathin Carbon with Interspersed Graphene/Fullerene-like Nanostructures: A Durable Protective Overcoat for High Density Magnetic Storage.

PubMed

Dwivedi, Neeraj; Satyanarayana, Nalam; Yeo, Reuben J; Xu, Hai; Ping Loh, Kian; Tripathy, Sudhiranjan; Bhatia, Charanjit S

2015-06-25

One of the key issues for future hard disk drive technology is to design and develop ultrathin (<2 nm) overcoats with excellent wear- and corrosion protection and high thermal stability. Forming carbon overcoats (COCs) having interspersed nanostructures by the filtered cathodic vacuum arc (FCVA) process can be an effective approach to achieve the desired target. In this work, by employing a novel bi-level surface modification approach using FCVA, the formation of a high sp(3) bonded ultrathin (~1.7 nm) amorphous carbon overcoat with interspersed graphene/fullerene-like nanostructures, grown on magnetic hard disk media, is reported. The in-depth spectroscopic and microscopic analyses by high resolution transmission electron microscopy, scanning tunneling microscopy, time-of-flight secondary ion mass spectrometry, and Raman spectroscopy support the observed findings. Despite a reduction of ~37% in COC thickness, the FCVA-processed thinner COC (~1.7 nm) shows promising functional performance in terms of lower coefficient of friction (~0.25), higher wear resistance, lower surface energy, excellent hydrophobicity and similar/better oxidation corrosion resistance than current commercial COCs of thickness ~2.7 nm. The surface and tribological properties of FCVA-deposited COC was further improved after deposition of lubricant layer.

Ultrathin Carbon with Interspersed Graphene/Fullerene-like Nanostructures: A Durable Protective Overcoat for High Density Magnetic Storage

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Satyanarayana, Nalam; Yeo, Reuben J.; Xu, Hai; Ping Loh, Kian; Tripathy, Sudhiranjan; Bhatia, Charanjit S.

2015-06-01

One of the key issues for future hard disk drive technology is to design and develop ultrathin (<2 nm) overcoats with excellent wear- and corrosion protection and high thermal stability. Forming carbon overcoats (COCs) having interspersed nanostructures by the filtered cathodic vacuum arc (FCVA) process can be an effective approach to achieve the desired target. In this work, by employing a novel bi-level surface modification approach using FCVA, the formation of a high sp3 bonded ultrathin (~1.7 nm) amorphous carbon overcoat with interspersed graphene/fullerene-like nanostructures, grown on magnetic hard disk media, is reported. The in-depth spectroscopic and microscopic analyses by high resolution transmission electron microscopy, scanning tunneling microscopy, time-of-flight secondary ion mass spectrometry, and Raman spectroscopy support the observed findings. Despite a reduction of ~37 % in COC thickness, the FCVA-processed thinner COC (~1.7 nm) shows promising functional performance in terms of lower coefficient of friction (~0.25), higher wear resistance, lower surface energy, excellent hydrophobicity and similar/better oxidation corrosion resistance than current commercial COCs of thickness ~2.7 nm. The surface and tribological properties of FCVA-deposited COC was further improved after deposition of lubricant layer.

Ultrathin Carbon with Interspersed Graphene/Fullerene-like Nanostructures: A Durable Protective Overcoat for High Density Magnetic Storage

PubMed Central

Dwivedi, Neeraj; Satyanarayana, Nalam; Yeo, Reuben J.; Xu, Hai; Ping Loh, Kian; Tripathy, Sudhiranjan; Bhatia, Charanjit S.

2015-01-01

One of the key issues for future hard disk drive technology is to design and develop ultrathin (<2 nm) overcoats with excellent wear- and corrosion protection and high thermal stability. Forming carbon overcoats (COCs) having interspersed nanostructures by the filtered cathodic vacuum arc (FCVA) process can be an effective approach to achieve the desired target. In this work, by employing a novel bi-level surface modification approach using FCVA, the formation of a high sp3 bonded ultrathin (~1.7 nm) amorphous carbon overcoat with interspersed graphene/fullerene-like nanostructures, grown on magnetic hard disk media, is reported. The in-depth spectroscopic and microscopic analyses by high resolution transmission electron microscopy, scanning tunneling microscopy, time-of-flight secondary ion mass spectrometry, and Raman spectroscopy support the observed findings. Despite a reduction of ~37 % in COC thickness, the FCVA-processed thinner COC (~1.7 nm) shows promising functional performance in terms of lower coefficient of friction (~0.25), higher wear resistance, lower surface energy, excellent hydrophobicity and similar/better oxidation corrosion resistance than current commercial COCs of thickness ~2.7 nm. The surface and tribological properties of FCVA-deposited COC was further improved after deposition of lubricant layer. PMID:26109208

Low-cost ultra-thin broadband terahertz beam-splitter.

PubMed

Ung, Benjamin S-Y; Fumeaux, Christophe; Lin, Hungyen; Fischer, Bernd M; Ng, Brian W-H; Abbott, Derek

2012-02-27

A low-cost terahertz beam-splitter is fabricated using ultra-thin LDPE plastic sheeting coated with a conducting silver layer. The beam splitting ratio is determined as a function of the thickness of the silver layer--thus any required splitting ratio can be printed on demand with a suitable rapid prototyping technology. The low-cost aspect is a consequence of the fact that ultra-thin LDPE sheeting is readily obtainable, known more commonly as domestic plastic wrap or cling wrap. The proposed beam-splitter has numerous advantages over float zone silicon wafers commonly used within the terahertz frequency range. These advantages include low-cost, ease of handling, ultra-thin thickness, and any required beam splitting ratio can be readily fabricated. Furthermore, as the beam-splitter is ultra-thin, it presents low loss and does not suffer from Fabry-Pérot effects. Measurements performed on manufactured prototypes with different splitting ratios demonstrate a good agreement with our theoretical model in both P and S polarizations, exhibiting nearly frequency-independent splitting ratios in the terahertz frequency range.

Manipulation of Spin-Torque Generation Using Ultrathin Au

NASA Astrophysics Data System (ADS)

An, Hongyu; Haku, Satoshi; Kanno, Yusuke; Nakayama, Hiroyasu; Maki, Hideyuki; Shi, Ji; Ando, Kazuya

2018-06-01

The generation and the manipulation of current-induced spin-orbit torques are of essential interest in spintronics. However, in spite of the vital progress in spin orbitronics, electric control of the spin-torque generation still remains elusive and challenging. We report on electric control of the spin-torque generation using ionic-liquid gating of ultrathin Au. We show that by simply depositing a SiO2 capping layer on an ultrathin-Au /Ni81Fe19 bilayer, the spin-torque generation efficiency is drastically enhanced by a maximum of 7 times. This enhancement is verified to be originated from the rough ultrathin-Au /Ni81Fe19 interface induced by the SiO2 deposition, which results in the enhancement of the interface spin-orbit scattering. We further show that the spin-torque generation efficiency from the ultrathin Au film can be reversibly manipulated by a factor of 2 using the ionic gating with an external electric field within a small range of 1 V. These results pave a way towards the efficient control of the spin-torque generation in spintronic applications.

Conductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, P.; Yu, G. Q.; Wei, H. X.

Electron-beam evaporated MgO-based magnetic tunnel junctions have been fabricated with the CoFeB free layer deposited at Ar pressure from 1 to 4 mTorr, and their tunneling process has been studied as a function of temperature and bias voltage. By changing the growth pressure, the junction dynamic conductance dI/dV, inelastic electron tunneling spectrum d²I/dV², and tunneling magnetoresistance vary with temperature. Moreover, the low-energy magnon cutoff energy E {sub C} derived from the conductance versus temperature curve agrees with interface magnon energy obtained directly from the inelastic electron tunneling spectrum, which demonstrates that interface magnons are involved in the electron tunneling process,more » opening an additional conductance channel and thus enhancing the total conductance.« less

Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions.

PubMed

Dvir, T; Massee, F; Attias, L; Khodas, M; Aprili, M; Quay, C H L; Steinberg, H

2018-02-09

Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe 2 devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin-orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.

Metal spintronics: Tunneling spectroscopy in junctions with magnetic and superconducting electrodes

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

Recent advances in generating, manipulating and detecting spin-polarized electrons and their electrical current make possible entirely new classes of spin-based sensor, logic and storage devices. An important such device is the magnetic tunnel junction (MTJ) which has been under intensive study in recent years: important applications include nonvolatile memory cells for high performance magnetic random access memory (MRAMs), and magnetic field sensors for high density hard disk drive read heads. Many aspects of the tunneling magnetoresistance (TMR) phenomenon are poorly understood although it is clear that the fundamental origin of TMR is the spin-polarization of the tunneling current. Thus, the measurement of the magnitude and sign of the tunneling spin polarization (TSP) is very important to help the further understanding of TMR. Recently, an extremely high TMR value, of up to 350% at room temperature, has been reported in practical MTJ devices. These MTJs are fabricated with highly oriented crystalline MgO(100) tunnel barriers by straightforward magnetron sputter deposition at room temperature. In parallel with this observation, we report extremely high TSP values exceeding 90% from CoFe/MgO tunnel spin injectors. These TSP values rival the highest polarization values previously reported using exotic half-metallic oxide ferromagnets. The spin polarization of electrons extracted from ferromagnetic films can be probed by a variety of techniques. Amongst these techniques, STS is perhaps the most relevant with respect to TMR but until now all measurements have been made with Al superconducting films which have low superconducting transition temperatures (Tc) so that the measurements must be made at temperatures below 400mK. We demonstrate the use of superconducting electrodes formed from NbN which has a much higher Tc (˜16K) than Al. The use of NbN allows measurements of TSP at higher temperatures above 1K. We have observed the phenomenon of Kondo

Electronic, magnetic and optical properties of B, C, N and F doped MgO monolayer

NASA Astrophysics Data System (ADS)

Moghadam, A. Dashti; Maskane, P.; Esfandiari, S.

2018-06-01

MgO as one of the alkaline earth oxides has various applications in industry. In this work, we aim to investigate the electronic, optical and magnetic properties of MgO monolayers. Furthermore, monolayer structures with substituted B, N, C and F atoms instead of O atom are studied. These results indicate that MgO layer has possessed potential application in optoelectronic and spintronic nano-devices.

Positron annihilation 2D-ACAR study of semi-coherent Li nanoclusters in MgO( 1 0 0 ) and MgO( 1 1 0 )

NASA Astrophysics Data System (ADS)

Falub, C. V.; Mijnarends, P. E.; Eijt, S. W. H.; van Huis, M. A.; van Veen, A.; Schut, H.

2002-05-01

Depth selective positron annihilation two-dimensional angular correlation of annihilation radiation (2D-ACAR) is used to determine the electronic structure of Li nanoclusters formed by implantation of 10 16 cm -26Li ions (with an energy of 30 keV) in MgO(1 0 0) and (1 1 0) crystals, and subsequently annealed at 950 K. The 2D-ACAR spectra of Li-implanted MgO obtained with 4 keV positrons reveal the semi-coherent ordering state of the embedded metallic Li nanoclusters. The results agree with ab initio Korringa-Kohn-Rostoker calculations.

Competitive Heterogeneous Nucleation Between Zr and MgO Particles in Commercial Purity Magnesium

NASA Astrophysics Data System (ADS)

Peng, G. S.; Wang, Y.; Fan, Z.

2018-04-01

Grain refining of commercial purity (CP) Mg by Zr addition with intensive melt shearing prior to solidification has been investigated. Experimental results showed that, when intensive melt shearing is imposed prior to solidification, the grain structure of CP Mg exhibits a complex changing pattern with increasing Zr addition. This complex behavior can be attributed to the change of nucleating particles in terms of their crystal structure, size, and number density with varied Zr additions. Naturally occurring MgO particles are found to be {100} faceted with a cubic morphology and 50 to 300 nm in size. Such MgO particles are usually populated densely in a liquid film (usually referred as oxide film) and can be effectively dispersed by intensive melt shearing. It has been confirmed that the dispersed MgO particles can act as nucleating substrates resulting in a significant grain refinement of CP Mg when no other more potent particles are present in the melt. However, Zr particles in the Mg-Zr alloys are more potent than MgO particles for nucleation of Mg due to their same crystal structure and similar lattice parameters with Mg. With the addition of Zr, Zr and the MgO particles co-exist in the melt. Grain refining efficiency is closely related to the competition for heterogeneous nucleation between Zr and the MgO particles. The final solidified microstructure is mainly determined by the interplay of three factors: nucleation potency (measured by lattice misfit), particle size, and particle number density.

Competitive Heterogeneous Nucleation Between Zr and MgO Particles in Commercial Purity Magnesium

NASA Astrophysics Data System (ADS)

Peng, G. S.; Wang, Y.; Fan, Z.

2018-06-01

Grain refining of commercial purity (CP) Mg by Zr addition with intensive melt shearing prior to solidification has been investigated. Experimental results showed that, when intensive melt shearing is imposed prior to solidification, the grain structure of CP Mg exhibits a complex changing pattern with increasing Zr addition. This complex behavior can be attributed to the change of nucleating particles in terms of their crystal structure, size, and number density with varied Zr additions. Naturally occurring MgO particles are found to be {100} faceted with a cubic morphology and 50 to 300 nm in size. Such MgO particles are usually populated densely in a liquid film (usually referred as oxide film) and can be effectively dispersed by intensive melt shearing. It has been confirmed that the dispersed MgO particles can act as nucleating substrates resulting in a significant grain refinement of CP Mg when no other more potent particles are present in the melt. However, Zr particles in the Mg-Zr alloys are more potent than MgO particles for nucleation of Mg due to their same crystal structure and similar lattice parameters with Mg. With the addition of Zr, Zr and the MgO particles co-exist in the melt. Grain refining efficiency is closely related to the competition for heterogeneous nucleation between Zr and the MgO particles. The final solidified microstructure is mainly determined by the interplay of three factors: nucleation potency (measured by lattice misfit), particle size, and particle number density.

Analytical electron microscopic studies and positron lifetime measurements in Al-doped MgO crystals

NASA Astrophysics Data System (ADS)

Pedrosa, M. A.; Pareja, R.; González, R.; Abraham, M. M.

1987-07-01

MgO crystals intentionally doped with Al were characterized by analytical electron microscopic examinations and positron lifetime measurements. Large spinel (MgO Al2O3) precipitates were observed in samples with high contents of Al. A well-defined crystallographic relationship between the precipitates and the matrix was found. The characteristics of positron lifetime spectra appear to depend on the valence state of the different impurities in the MgO lattice suggesting that positrons are trapped by vacancy impurity complexes.

Ultrathin zoom telescopic objective.

PubMed

Li, Lei; Wang, Di; Liu, Chao; Wang, Qiong-Hua

2016-08-08

We report an ultrathin zoom telescopic objective that can achieve continuous zoom change and has reduced compact volume. The objective consists of an annular folded lens and three electrowetting liquid lenses. The annular folded lens undertakes the main part of the focal power of the lens system. Due to a multiple-fold design, the optical path is folded in a lens with the thickness of ~1.98mm. The electrowetting liquid lenses constitute a zoom part. Based on the proposed objective, an ultrathin zoom telescopic camera is demonstrated. We analyze the properties of the proposed objective. The aperture of the proposed objective is ~15mm. The total length of the system is ~18mm with a tunable focal length ~48mm to ~65mm. Compared with the conventional zoom telescopic objective, the total length has been largely reduced.

Combustion synthesis of MgO nanoparticles using plant extract: Structural characterization and photoluminescence studies

NASA Astrophysics Data System (ADS)

Kumar, Danith; Yadav, L. S. Reddy; Lingaraju, K.; Manjunath, K.; Suresh, D.; Prasad, Daruka; Nagabhushana, H.; Sharma, S. C.; Naika, H. Raja; Chikkahanumantharayappa, Nagaraju, G.

2015-06-01

Magnesium oxide nanoparticles (MgO Nps) have been successfully synthesized via solution combustion method using Parthenium plant extract as fuel for the first time. Powder X-ray diffraction (PXRD) pattern reveal that product belongs to the cubic phase (Periclase). FTIR spectrum shows the band at 822 cm-1 indicates the formation of cubic periclase MgO. The optical band gap of MgO Nps estimated from UV -Vis spectrum was found to be in the range 5.40-5.45 eV. SEM images showed that, the product is agglomerated and particle in nature. Photoluminescence (PL) studies shows violet emission at 390 nm, blue emission at 470 nm and green emission at 550 nm. MgO Nps shows good photocatalytic activity for the degradation of methylene blue (MB) dye under UV/Sun light irradiation.

Subsurface synthesis and characterization of Ag nanoparticles embedded in MgO

NASA Astrophysics Data System (ADS)

Vilayurganapathy, S.; Devaraj, A.; Colby, R.; Pandey, A.; Varga, T.; Shutthanandan, V.; Manandhar, S.; El-Khoury, P. Z.; Kayani, Asghar; Hess, W. P.; Thevuthasan, S.

2013-03-01

Metal nanoparticles exhibit a localized surface plasmon resonance (LSPR) which is very sensitive to the size and shape of the nanoparticle and the surrounding dielectric medium. The coupling between the electromagnetic radiation and the localized surface plasmon in metallic nanoparticles results in a sizable enhancement of the incident fields, making them possible candidates for plasmonic applications. In particular, partially exposed metallic nanoparticles distributed in a dielectric matrix can provide prime locations for LSPR spectroscopy and sensing. We report the synthesis and characterization of a plasmonic substrate consisting of Ag nanoparticles partially buried in MgO. Ag nanoparticles of different shapes and size distributions were synthesized below the surface of MgO by implanting 200 keV Ag+ ions followed by annealing at 1000 °C for 10 and 30 h. A detailed optical and structural characterization was carried out to understand the evolution of the Ag nanoparticle and size distribution inside the MgO matrix. Micro x-ray diffraction (Micro-XRD) was employed to investigate the structural properties and estimate the crystallite size. The nanoparticles evolved from a spherical to a faceted morphology with annealing time, assuming an octahedral shape truncated at the (001) planes, as visualized from aberration-corrected transmission electron microscopy (TEM) images. The nanoparticles embedded in MgO were shown to be pure metallic Ag using atom probe tomography (APT). The nanoparticles were partially exposed to the surface by employing plasma etch techniques to remove the overlaying MgO. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were employed to study the surface morphology and obtain a height distribution for the partially exposed nanoparticles.

Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Zhang, De-Lin; Schliep, Karl B.; Wu, Ryan J.; Quarterman, P.; Reifsnyder Hickey, Danielle; Lv, Yang; Chao, Xiaohui; Li, Hongshi; Chen, Jun-Yang; Zhao, Zhengyang; Jamali, Mahdi; Mkhoyan, K. Andre; Wang, Jian-Ping

2018-04-01

We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance the TMR ratio of the p-MTJs formed using high-temperature annealing, which are necessary for the formation of high quality L10-FePd films and MgO barriers. The L10-FePd p-MTJ stack was developed with an FePd free layer with a stack of FePd/X/Co20Fe60B20, where X is the diffusion barrier, and patterned into micron-sized MTJ pillars. The addition of the diffusion barrier was found to greatly enhance the magneto-transport behavior of the L10-FePd p-MTJ pillars such that those without a diffusion barrier exhibited negligible TMR ratios (<1.0%), whereas those with a Ta (W) diffusion barrier exhibited TMR ratios of 8.0% (7.0%) at room temperature and 35.0% (46.0%) at 10 K after post-annealing at 350 °C. These results indicate that diffusion barriers could play a crucial role in realizing high TMR ratios in bulk p-MTJs such as those based on FePd and Mn-based perpendicular magnetic anisotropy materials for spintronic applications.

MgO NPs synthesis, capping and enhanced free radical effect on the bacteria and its cell morphology

NASA Astrophysics Data System (ADS)

Kushwaha, Amisha; Bagchi, T.

2018-05-01

Magnesium Oxide Nanoparticles (MgO NPs) commonly known as Magnesia is a white powder, hygroscopic material. MgO NPs were synthesized through four methods Co-precipitation method (Co-PM), Solution combustion (S-CoM) and Sol-gel method with starch (So-GSM) and CTAB (So-GCM), classified as template dependent and template independent method using magnesium nitrate hexahydrate (Mg(NO3).6H2O) as the precursor and comparative analysis was done through DLS. The order of hydrodynamic diameters of four different synthesis method of MgO NPs is Co-PMMgO NPs considered for the further studies and characterized through UV/Visible spectroscopy, DLS and FTIR spectroscopy and particle size was confirmed with transmission electron microscopy (TEM), crystal lattice was estimated by XRD spectroscopy, morphology was confirmed with SEM and surface absorbed free radicals were analysed with electron spin resonance (ESR). Subsequently, MgO NPs were capped with Lauric acid (LA). Further, antibacterial assay of MgO NPs, LA capped MgO NPs (LA-MgO) and LA studied against bacteria through Minimum Inhibitory Concentration (MIC). In the antibacterial test the Ascending order for bactericidal activity responding against Bacillus pumilus was resultant as LA> LA-MgO NPs> MgO NPs responding.

Skyrmion morphology in ultrathin magnetic films

NASA Astrophysics Data System (ADS)

Gross, I.; Akhtar, W.; Hrabec, A.; Sampaio, J.; Martínez, L. J.; Chouaieb, S.; Shields, B. J.; Maletinsky, P.; Thiaville, A.; Rohart, S.; Jacques, V.

2018-02-01

Nitrogen-vacancy magnetic microscopy is employed in the quenching mode as a noninvasive, high-resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected by local pinning effects and magnetic field history. Micromagnetic simulations including a static disorder, based on the physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.

Ultrathin Quantum Dot Display Integrated with Wearable Electronics.

PubMed

Kim, Jaemin; Shim, Hyung Joon; Yang, Jiwoong; Choi, Moon Kee; Kim, Dong Chan; Kim, Junhee; Hyeon, Taeghwan; Kim, Dae-Hyeong

2017-10-01

An ultrathin skin-attachable display is a critical component for an information output port in next-generation wearable electronics. In this regard, quantum dot (QD) light-emitting diodes (QLEDs) offer unique and attractive characteristics for future displays, including high color purity with narrow bandwidths, high electroluminescence (EL) brightness at low operating voltages, and easy processability. Here, ultrathin QLED displays that utilize a passive matrix to address individual pixels are reported. The ultrathin thickness (≈5.5 µm) of the QLED display enables its conformal contact with the wearer's skin and prevents its failure under vigorous mechanical deformation. QDs with relatively thick shells are employed to improve EL characteristics (brightness up to 44 719 cd m -2 at 9 V, which is the record highest among wearable LEDs reported to date) by suppressing the nonradiative recombination. Various patterns, including letters, numbers, and symbols can be successfully visualized on the skin-mounted QLED display. Furthermore, the combination of the ultrathin QLED display with flexible driving circuits and wearable sensors results in a fully integrated QLED display that can directly show sensor data. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

PubMed

Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-08-01

Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

DOEpatents

Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

2005-02-15

An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

Ultrathin Optical Panel And A Method Of Making An Ultrathin Optical Panel.

DOEpatents

Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

2005-05-17

An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

Ultrathin optical panel and a method of making an ultrathin optical panel

DOEpatents

Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

2003-02-11

An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

Ultrathin optical panel and a method of making an ultrathin optical panel

DOEpatents

Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

2001-10-09

An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated with a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

Ultrathin optical panel and a method of making an ultrathin optical panel

DOEpatents

Biscardi, Cyrus; Brewster, Calvin; DeSanto, Leonard; Veligdan, James T.

2002-01-01

An ultrathin optical panel, and a method of producing an ultrathin optical panel, are disclosed, including stacking a plurality of glass sheets, which sheets may be coated With a transparent cladding substance or may be uncoated, fastening together the plurality of stacked coated glass sheets using an epoxy or ultraviolet adhesive, applying uniform pressure to the stack, curing the stack, sawing the stack to form an inlet face on a side of the stack and an outlet face on an opposed side of the stack, bonding a coupler to the inlet face of the stack, and fastening the stack, having the coupler bonded thereto, within a rectangular housing having an open front which is aligned with the outlet face, the rectangular housing having therein a light generator which is optically aligned with the coupler. The light generator is preferably placed parallel to and proximate with the inlet face, thereby allowing for a reduction in the depth of the housing.

Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell.

PubMed

Su, Yantao; Xin, Chao; Feng, Yancong; Lin, Qinxian; Wang, Xinwei; Liang, Jun; Zheng, Jiaxin; Lin, Yuan; Pan, Feng

2016-10-11

The present work intends to explain why ultrathin Al 2 O 3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al 2 O 3 /Cu x Te by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al 2 O 3 ) as the key factor for rectification and tunneling effects.

Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration

NASA Astrophysics Data System (ADS)

McFadden, Anthony; Wilson, Nathaniel; Brown-Heft, Tobias; Pennachio, Daniel; Pendharkar, Mihir; Logan, John A.; Palmstrøm, Chris J.

2017-12-01

The interface formation in epitaxial MgO /Co2MnSi (001) films was studied using in-situ X-ray photoelectron spectroscopy (XPS). MgO was deposited on single crystal Co2MnSi (001) layers using e-beam evaporation: a technique which is expected to oxidize the Co2MnSi layer somewhat due to the rise in oxygen partial pressure during MgO deposition while leaving the deposited MgO oxygen deficient. Not unexpectedly, we find that e-beam evaporation of MgO raises the oxygen background in the deposition chamber to a level that readily oxidizes the Co2MnSi surface, with oxygen bonding preferentially to Mn and Si over Co. Interestingly, this oxidation causes an elemental segregation, with Mn-Si effectively moving toward the surface, resulting in an MgO /Co2MnSi interface with a composition significantly differing from the original surface of the unoxidized Co2MnSi film. As MgO is deposited on the oxidized Co2MnSi , the Mn-oxides are reduced, while the Si oxide remains, and is only somewhat reduced after additional annealing in ultrahigh vacuum. Annealing after the MgO is grown on Co2MnSi causes oxygen to move away from the oxidized Co2MnSi interface toward the surface and into the MgO. This observation is consistent with an increase in the tunneling magnetoresistance ratio with post-growth annealing measured in fabricated magnetic tunnel junctions (MTJs). The findings are discussed in light of fabrication of MgO/Heusler based MTJs, where the exponential decay of tunneling probability with contact separation exemplifies the importance of the ferromagnet/tunnel barrier interface.

Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

PubMed Central

Mahadeva, Sreekanth K.; Fan, Jincheng; Biswas, Anis; Sreelatha, K.S.; Belova, Lyubov; Rao, K.V.

2013-01-01

We report a systematic study of room-temperature ferromagnetism (RTFM) in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2) are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2) ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS) value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies. PMID:28348346

Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles

NASA Astrophysics Data System (ADS)

Isik, M.; Gasanly, N. M.

2018-05-01

Shallow trapping centers in MgO nanoparticles were characterized using photo-transferred thermoluminescence (TL) measurements. Experiments were carried out in low temperature range of 10-280 K with constant heating rate. Shallow traps were filled with charge carriers firstly by irradiating the sample at room temperature using S90/Y90 source and then illuminating at 10 K using blue LED. TL glow curve exhibited one peak around 150 K. Curve fitting analyses showed that this peak is composed of two individual peaks with maximum temperatures of 149.0 and 155.3 K. The activation energies of corresponding trapping centers were revealed as 0.70 and 0.91 eV. The dominant mechanism for TL process was found as second order kinetics which represent that fast retrapping is effective transitions taking place within the band gap. Structural characterization of MgO nanoparticles were investigated using x-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. Analyses of experimental observations indicated that MgO nanoparticles show good crystallinity with particle size in nanometer scale.

Experimental and DFT studies of gold nanoparticles supported on MgO(111) nano-sheets and their catalytic activity.

PubMed

Li, Zhi; Ciobanu, Cristian V; Hu, Juncheng; Palomares-Báez, Juan-Pedro; Rodríguez-López, José-Luis; Richards, Ryan

2011-02-21

A wet chemical preparation of MgO with the (111) facet as the primary surface has recently been reported and with alternating layers of oxygen anions and magnesium cations, this material shows unique chemical and physical properties. The potential to utilize the MgO(111) surface for the immobilization of metal particles is intriguing because the surface itself offers a very different environment for the metal particle with an all oxygen interface, as opposed to the typical (100) facet that possesses alternating oxygen anion and magnesium cation sites on the surface. Gold nanoparticles have demonstrated a broad range of interesting catalytic properties, but are often susceptible to aggregation at high temperatures and are very sensitive to substrate effects. Here, we investigate gold-supported on MgO(111) nanosheets as a catalyst system for the aerobic oxidation of benzyl alcohol. Gold nanoparticles deposited on MgO(111) show an increased level of activity in the solvent-free benzyl alcohol aerobic oxidation as compared to gold nanoparticles deposited on a typical MgO aerogel. TEM studies reveal that the gold nanoparticles have a hemispherical shape while sitting on the main surface of MgO(111) nanosheets, with a large Au-MgO interface. Given that the gold nanoparticles deposited on the two types of MgO have similar size, and that the two types of unmodified MgO show almost the same activities in the blank reaction, we infer that the high activity of Au/MgO(111) is due to the properties of the (111) support and/or those of the gold-support interface. To understand the binding of Au on low-index MgO surfaces and the charge distribution at the surface of the support, we have performed density functional theory (DFT) calculations on all low-index MgO substrates (with and without gold), using a model Au(10) cluster. Due to similar lattice constants of Au(111) and MgO(111) planes, the Au cluster retains its structural integrity and binds strongly on MgO(111) with either

Combustion synthesis of MgO nanoparticles using plant extract: Structural characterization and photoluminescence studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Danith; Chikkahanumantharayappa; Yadav, L. S. Reddy

Magnesium oxide nanoparticles (MgO Nps) have been successfully synthesized via solution combustion method using Parthenium plant extract as fuel for the first time. Powder X-ray diffraction (PXRD) pattern reveal that product belongs to the cubic phase (Periclase). FTIR spectrum shows the band at 822 cm{sup −1} indicates the formation of cubic periclase MgO. The optical band gap of MgO Nps estimated from UV –Vis spectrum was found to be in the range 5.40–5.45 eV. SEM images showed that, the product is agglomerated and particle in nature. Photoluminescence (PL) studies shows violet emission at 390 nm, blue emission at 470 nm and green emissionmore » at 550 nm. MgO Nps shows good photocatalytic activity for the degradation of methylene blue (MB) dye under UV/Sun light irradiation.« less

Improved passive treatment of high Zn and Mn concentrations using caustic magnesia (MgO): particle size effects.

PubMed

Rötting, Tobias S; Ayora, Carlos; Carrera, Jesus

2008-12-15

High concentrations of divalent metals such as Zn, Mn, Cu, Pb, Ni, Cd, Co, etc. are not removed satisfactorily in conventional (calcite- or organic matter-based) passive treatment systems. Caustic magnesia ("MgO") has been used successfully as an alternative alkaline material to remove these metals almost completely from water, but columns with coarse-grained MgO lost reactivity or permeability due to the accumulation of precipitates when only a small portion of the reagent had been spent. In the present study, MgO was mixed with wood chips to overcome these problems. Two columns with different MgO grain sizes were used to treat Zn- and Mn-rich water during one year. Performance was compared by measuring depth profiles of chemical parameters and hydraulic conductivity. The column containing 25% (v/v) of MgO with median particle size of about 3 mm displayed low reactivity and poor metal retention. In contrast, the column containing only 12.5% (v/v) of MgO with median particle size of 0.15 mm depleted Zn and Mn below detection limit throughout the study and had a good hydraulic performance. 95% of the applied MgO was consumed in the zone where Zn and Mn accumulated. The fine alkaline grains can dissolve almost completely before the growing layer of precipitates passivates them, whereas clogging is prevented by the large pores of the coarse inert matrix (wood chips). A reactive transport model corroborated the hypotheses that Zn(II) was removed due to its low solubility at pH near 10 achieved by MgO dissolution, whereas Mn(II) was removed due to rapid oxidation to Mn(III) at this pH and subsequent precipitation. The model also confirmed that the small size and large specific surface area of the MgO particles are the key factor to achieve a sufficiently fast dissolution.

Ultrathin planar hematite film for solar photoelectrochemical water splitting

DOE PAGES

Liu, Dong; Bierman, David M.; Lenert, Andrej; ...

2015-10-08

Hematite holds promise for photoelectrochemical (PEC) water splitting due to its stability, low-cost, abundance and appropriate bandgap. However, it suffers from a mismatch between the hole diffusion length and light penetration length. We have theoretically designed and characterized an ultrathin planar hematite/silver nanohole array/silver substrate photoanode. Due to the supported destructive interference and surface plasmon resonance, photons are efficiently absorbed in an ultrathin hematite film. In conclusion, compared with ultrathin hematite photoanodes with nanophotonic structures, this photoanode has comparable photon absorption but with intrinsically lower recombination losses due to its planar structure and promises to exceed the state-of-the-art photocurrent ofmore » hematite photoanodes.« less

Fabrication and Characterization of Ultrathin-ring Electrodes for Pseudo-steady-state Amperometric Detection.

PubMed

Kitazumi, Yuki; Hamamoto, Katsumi; Noda, Tatsuo; Shirai, Osamu; Kano, Kenji

2015-01-01

The fabrication of ultrathin-ring electrodes with a diameter of 2 mm and a thickness of 100 nm is established. The ultrathin-ring electrodes provide a large density of pseudo-steady-state currents, and realize pseudo-steady-state amperometry under quiescent conditions without a Faraday cage. Under the limiting current conditions, the current response at the ultrathin-ring electrode can be well explained by the theory of the microband electrode response. Cyclic voltammograms at the ultrathin-ring electrode show sigmoidal characteristics with some hysteresis. Numerical simulation reveals that the hysteresis can be ascribed to the time-dependence of pseudo-steady-state current. The performance of amperometry with the ultrathin-ring electrode has been verified in its application to redox enzyme kinetic measurements.

High mobility La-doped BaSnO3 on non-perovskite MgO substrate

NASA Astrophysics Data System (ADS)

Kim, Youjung; Shin, Juyeon; Kim, Young Mo; Char, Kookrin

(Ba,La)SnO3 is a transparent perovskite oxide with high electron mobility and excellent oxygen stability. Field effect device with (Ba,La)SnO3 channel was reported to show good output characteristics on STO substrate. Here, we fabricated (Ba,La)SnO3\\ films and field effect devices with (Ba,La)SnO3 channel on non-perovskite MgO substrates, which are available in large size wafers. X-ray diffraction and transmission electron microscope (TEM) images of (Ba,La)SnO3\\ films on MgO substrates show that the films are epitaxial with many threading dislocations. (Ba,La)SnO3 exhibits the high mobility with 97.2 cm2/Vs at 2 % La doping on top of 150 nm thick BaSnO3 buffer layer. Excellent carrier modulation was observed in field effect devices. FET performances on MgO substrates are slightly better than those on SrTiO3 substrates in spite of the higher dislocation density on MgO than on SrTiO3 substrates. These high mobility BaSnO3 thin films and transistors on MgO substrates will accelerate development for applications in high temperature and high power electronics. Samsung Science and Technology Foundation.

Mechanically Assisted Self-Healing of Ultrathin Gold Nanowires.

PubMed

Wang, Binjun; Han, Ying; Xu, Shang; Qiu, Lu; Ding, Feng; Lou, Jun; Lu, Yang

2018-04-17

As the critical feature sizes of integrated circuits approaching sub-10 nm, ultrathin gold nanowires (diameter <10 nm) have emerged as one of the most promising candidates for next-generation interconnects in nanoelectronics. Also due to their ultrasmall dimensions, however, the structures and morphologies of ultrathin gold nanowires are more prone to be damaged during practical services, for example, Rayleigh instability can significantly alter their morphologies upon Joule heating, hindering their applications as interconnects. Here, it is shown that upon mechanical perturbations, predamaged, nonuniform ultrathin gold nanowires can quickly recover into uniform diameters and restore their smooth surfaces, via a simple mechanically assisted self-healing process. By examining the local self-healing process through in situ high-resolution transmission electron microscopy, the underlying mechanism is believed to be associated with surface atomic diffusion as evidenced by molecular dynamics simulations. In addition, mechanical manipulation can assist the atoms to overcome the diffusion barriers, as suggested by ab initio calculations, to activate more surface adatoms to diffuse and consequently speed up the self-healing process. This result can provide a facile method to repair ultrathin metallic nanowires directly in functional devices, and quickly restore their microstructures and morphologies by simple global mechanical perturbations. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Formation of solid Kr nanoclusters in MgO

NASA Astrophysics Data System (ADS)

van Huis, M. A.; van Veen, A.; Schut, H.; Kooi, B. J.; de Hosson, J. Th.

2003-06-01

The phenomenon of positron confinement enables us to investigate the electronic structure of nanoclusters embedded in host matrices. Solid Kr nanoclusters are a very interesting subject of investigation because of the very low predicted value of the positron affinity of bulk Kr. In this work, positron trapping in solid Kr nanoclusters embedded in MgO is investigated. The Kr nanoclusters were created by means of 280 keV Kr ion implantation in single crystals of MgO(100) and subsequent thermal annealing at a temperature of 1100 K. The nanoclusters were observed by cross-sectional transmission electron microscopy in high-resolution mode. The fcc Kr nanoclusters are rectangularly shaped with sizes of 2 to 5 nm and are in a cube-on-cube orientation relationship with the MgO host matrix. From the Moiré fringes in high-resolution recordings, the lattice parameter of the solid Kr was deduced and found to vary from 5.3 to 5.8 Å. The corresponding pressures are 0.6 2.5 GPa as found using the Ronchi equation of state. The relationship between lattice parameter and cluster size was investigated and it was found that the lattice parameter increases linearly with increasing nanocluster size. The defect evolution during annealing was monitored by means optical absorption spectroscopy and positron beam analysis. No evidence of positron trapping was found despite the very low positron affinity of solid Kr. Alternative definitions of the positron affinity are proposed for application to insulator materials.

Curie temperature of ultrathin ferromagnetic layer with Dzyaloshinskii-Moriya interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, Chun-Yeol

2014-08-07

We investigate the effect of the Dzyaloshinskii-Moriya interaction (DMI) on the Curie temperature of the ultrathin ferromagnetic layers. It has been known that the Curie temperature of the ferromagnet depends on spin wave excitation energies, and they are affected by DMI. Therefore, the ferromagnetic transition temperature of the ultrathin ferromagnetic layer must be sensitive on the DMI. We find that the Curie temperature depends on the DMI by using the double time Green's function method. Since the DMI is arisen by the inversion symmetry breaking structure, the DMI is always important in the inversion symmetry breaking ultrathin ferromagnetic layers.

Extracellular ultrathin fibers sensitive to intracellular reactive oxygen species: Formation of intercellular membrane bridges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Se-Hui; Park, Jin-Young; Joo, Jung-Hoon

2011-07-15

Membrane bridges are key cellular structures involved in intercellular communication; however, dynamics for their formation are not well understood. We demonstrated the formation and regulation of novel extracellular ultrathin fibers in NIH3T3 cells using confocal and atomic force microscopy. At adjacent regions of neighboring cells, phorbol 12-myristate 13-acetate (PMA) and glucose oxidase induced ultrathin fiber formation, which was prevented by Trolox, a reactive oxygen species (ROS) scavenger. The height of ROS-sensitive ultrathin fibers ranged from 2 to 4 nm. PMA-induced formation of ultrathin fibers was inhibited by cytochalasin D, but not by Taxol or colchicine, indicating that ultrathin fibers mainlymore » comprise microfilaments. PMA-induced ultrathin fibers underwent dynamic structural changes, resulting in formation of intercellular membrane bridges. Thus, these fibers are formed by a mechanism(s) involving ROS and involved in formation of intercellular membrane bridges. Furthermore, ultrastructural imaging of ultrathin fibers may contribute to understanding the diverse mechanisms of cell-to-cell communication and the intercellular transfer of biomolecules, including proteins and cell organelles.« less

Effect of MgO on Liquidus Temperatures in the ZnO-"FeO"-Al2O3-CaO-SiO2-MgO System in Equilibrium with Metallic Iron

NASA Astrophysics Data System (ADS)

Zhao, Baojun; Hayes, Peter C.; Jak, Evgueni

2011-06-01

The phase equilibria in the ZnO-"FeO"-Al2O3-CaO-SiO2-MgO system have been determined experimentally in equilibrium with metallic iron. Synthetic slags were equilibrated at a high temperature, quenched, and then the compositions of the phases in equilibrium were measured using electron probe X-ray microanalysis. Pseudoternary sections of the form ZnO-"FeO"-(Al2O3 + CaO + SiO2) for CaO/SiO2 = 0.71, (CaO + SiO2)/Al2O3 = 5 and fixed MgO concentrations of 2, 4, and 6 wt pct have been constructed. Wustite (Fe2+,Mg,Zn)O and spinel (Fe2+,Mg,Zn)O·(Al,Fe3+)2O3 are the major primary phases in the temperature and composition ranges investigated. The liquidus temperatures are increased by 140 K in the wustite primary phase field and by 70 K in the spinel primary phase field with the addition of 6 wt pct MgO in the slag. The partitioning of MgO and ZnO between the solid and liquid phases has been discussed.

Effect of MgO and MnO on Phosphorus Utilization in P-Bearing Steelmaking Slag

NASA Astrophysics Data System (ADS)

Lin, Lu; Bao, Yan-Ping; Wang, Min; Li, Xiang

2016-04-01

In order to recycle the phosphorus in P-bearing converter slag and make it used as slag phosphate fertilizer, the effect of MgO and MnO in P-bearing steelmaking slag on phosphorus existence form, P2O5 solubility and magnetic separation behavior were researched systematically. The results show that the phosphorus in slag is mainly in the form of n2CaO · SiO2-3CaO · P2O5 (for short nC2S-C3P) solid solution in the P-rich phase for CaO-SiO2-FetO-P2O5-X (X stands for MgO and MnO, respectively). And the increasing of MgO and MnO content has no influence on precipitation of nC2S-C3P solid solution in slag, MnO and MgO mainly enter into RO phase and base phase to form MnFe2O4 and MgFe2O4, which has little effect on the P2O5 content of P-rich phase, so which has little effect on the degree of phosphorus enrichment and phosphorus occurrence form of the P-bearing slag. And adding MgO and MnO into CaO-SiO2-P2O5-Fe2O3 slag system can break the complex net structure formed by Si-O on certain degree, and also hinder the precipitation of β-Ca3(PO4)2 crystal with low citric acid solubility during the melting-cooling process. Therefore, adding appropriate MgO and MnO content into slag can improve the slag P2O5 solubility, but the effect of different amounts of MgO and MnO on the P2O5 solubility has little difference. Meanwhile, adding MgO and MnO into slag can improve the metallization of slag and magnetism of iron-rich phase, make the magnetic substances content increase and separation of phosphorus and iron incomplete, so it is adverse to phosphorus resources recovery from P-bearing slag by magnetic separation method. In order to recycle the phosphorus in P-bearing converter slag, the MgO and MnO content in the P-bearing slag should be controlled in the steelmaking process.

Grain boundaries at the surface of consolidated MgO nanocrystals and acid-base functionality.

PubMed

Vingurt, Dima; Fuks, David; Landau, Miron V; Vidruk, Roxana; Herskowitz, Moti

2013-09-21

The increase of the surface basicity-acidity of MgO material by factors of 1.8-3.0 due to consolidation of its nanocrystals was demonstrated by the indicator titration. It was shown that the parallel increase of surface acidity and basicity is attributed to the formation of grain boundaries (GB) after MgO aerogel densification. A simple model predicting the increase of surface acidity-basicity of MgO that correlates with the results of direct measurements was proposed. The model is based on the study of the fine atomic structure at GB surface areas in consolidated MgO nanocrystals in the framework of Density Functional Theory. It is found that the displacements of coordinatively unsaturated surface ions near the GB are significant at the distances ~3-4 atomic layers from the geometrical contact plane between nanocrystals. The detailed analysis of atomic positions inside GB demonstrated the coordination deficiency of surface atoms at the GB areas leading to the formation of stretched bonds and to creation of low coordinated surface ions due to splitting of coordination numbers of surface atoms belonging to GB areas. Density of states for electrons shows the existence of additional states in the band gap close to the bottom of the conduction band. The adsorption energy of CO2 molecules atop oxygen atoms exposed at surface GB areas is of the same order of magnitude as that reported for oxygen atoms at crystallographic edges and corners of MgO crystals. It provides additional options for bonding of molecules at the surface of nanocrystalline MgO increasing the adsorption capacity and catalytic activity.

Pose measurement method and experiments for high-speed rolling targets in a wind tunnel.

PubMed

Jia, Zhenyuan; Ma, Xin; Liu, Wei; Lu, Wenbo; Li, Xiao; Chen, Ling; Wang, Zhengqu; Cui, Xiaochun

2014-12-12

High-precision wind tunnel simulation tests play an important role in aircraft design and manufacture. In this study, a high-speed pose vision measurement method is proposed for high-speed and rolling targets in a supersonic wind tunnel. To obtain images with high signal-to-noise ratio and avoid impacts on the aerodynamic shape of the rolling targets, a high-speed image acquisition method based on ultrathin retro-reflection markers is presented. Since markers are small-sized and some of them may be lost when the target is rolling, a novel markers layout with which markers are distributed evenly on the surface is proposed based on a spatial coding method to achieve highly accurate pose information. Additionally, a pose acquisition is carried out according to the mentioned markers layout after removing mismatching points by Case Deletion Diagnostics. Finally, experiments on measuring the pose parameters of high-speed targets in the laboratory and in a supersonic wind tunnel are conducted to verify the feasibility and effectiveness of the proposed method. Experimental results indicate that the position measurement precision is less than 0.16 mm, the pitching and yaw angle precision less than 0.132° and the roll angle precision 0.712°.

Pose Measurement Method and Experiments for High-Speed Rolling Targets in a Wind Tunnel

PubMed Central

Jia, Zhenyuan; Ma, Xin; Liu, Wei; Lu, Wenbo; Li, Xiao; Chen, Ling; Wang, Zhengqu; Cui, Xiaochun

2014-01-01

High-precision wind tunnel simulation tests play an important role in aircraft design and manufacture. In this study, a high-speed pose vision measurement method is proposed for high-speed and rolling targets in a supersonic wind tunnel. To obtain images with high signal-to-noise ratio and avoid impacts on the aerodynamic shape of the rolling targets, a high-speed image acquisition method based on ultrathin retro-reflection markers is presented. Since markers are small-sized and some of them may be lost when the target is rolling, a novel markers layout with which markers are distributed evenly on the surface is proposed based on a spatial coding method to achieve highly accurate pose information. Additionally, a pose acquisition is carried out according to the mentioned markers layout after removing mismatching points by Case Deletion Diagnostics. Finally, experiments on measuring the pose parameters of high-speed targets in the laboratory and in a supersonic wind tunnel are conducted to verify the feasibility and effectiveness of the proposed method. Experimental results indicate that the position measurement precision is less than 0.16 mm, the pitching and yaw angle precision less than 0.132° and the roll angle precision 0.712°. PMID:25615732

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

NASA Astrophysics Data System (ADS)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Controllable fabrication of ultrathin free-standing graphene films

PubMed Central

Chen, Jianyi; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Liu, Hongtao; Wu, Bin; Yu, Gui; Hu, Wenping; Liu, Yunqi; Zhu, Daoben

2014-01-01

Graphene free-standing film-like or paper-like materials have attracted great attention due to their intriguing electronic, optical and mechanical properties and potential application in chemical filters, molecular storage and supercapacitors. Although significant progress has been made in fabricating graphene films or paper, there is still no effective method targeting ultrathin free-standing graphene films (UFGFs). Here, we present a modified filtration assembly method to prepare these ultrathin films. With this approach, we have fabricated a series of ultrathin free-standing graphene oxide films and UFGFs, up to 40 mm in diameter, with controllable thickness from micrometre to nanoscale (approx. 40 nm) dimensions. This method can be easily scaled up and the films display excellent optical, electrical and electrochemical properties. The ability to produce UFGFs from graphene oxide with a scalable, low-cost approach should take us a step closer to real-world applications of graphene. PMID:24615152

Reduction of CaO and MgO Slag Components by Al in Liquid Fe

NASA Astrophysics Data System (ADS)

Mu, Haoyuan; Zhang, Tongsheng; Fruehan, Richard J.; Webler, Bryan A.

2018-05-01

This study documents laboratory-scale observations of reactions between Fe-Al alloys (0.1 to 2 wt pct Al) with slags and refractories. Al in steels is known to reduce oxide components in slag and refractory. With continued development of Al-containing Advanced High-Strength Steel (AHSS) grade, the effects of higher Al must be examined because reduction of components such as CaO and MgO could lead to uncontrolled modification of non-metallic inclusions. This may lead to castability or in-service performance problems. In this work, Fe-Al alloys and CaO-MgO-Al2O3 slags were melted in an MgO crucible and samples were taken at various times up to 60 minutes. Inclusions from these samples were characterized using an automated scanning electron microscope equipped with energy dispersive x-ray analysis (SEM/EDS). Initially Al2O3 inclusions were modified to MgAl2O4, then MgO, then MgO + CaO-Al2O3-MgO liquid inclusions. Modification of the inclusions was faster at higher Al levels. Very little Ca modification was observed except at 2 wt pct Al level. The thermodynamic feasibility of inclusion modification and some of the mass transfer considerations that may have led to the differences in the Mg and Ca modification behavior were discussed.

Loss/gain-induced ultrathin antireflection coatings

PubMed Central

Luo, Jie; Li, Sucheng; Hou, Bo; Lai, Yun

2016-01-01

Tradional antireflection coatings composed of dielectric layers usually require the thickness to be larger than quarter wavelength. Here, we demonstrate that materials with permittivity or permeability dominated by imaginary parts, i.e. lossy or gain media, can realize non-resonant antireflection coatings in deep sub-wavelength scale. Interestingly, while the reflected waves are eliminated as in traditional dielectric antireflection coatings, the transmitted waves can be enhanced or reduced, depending on whether gain or lossy media are applied, respectively. We provide a unified theory for the design of such ultrathin antireflection coatings, showing that under different polarizations and incident angles, different types of ultrathin coatings should be applied. Especially, under transverse magnetic polarization, the requirement shows a switch between gain and lossy media at Brewster angle. As a proof of principle, by using conductive films as a special type of lossy antireflection coatings, we experimentally demonstrate the suppression of Fabry-Pérot resonances in a broad frequency range for microwaves. This valuable functionality can be applied to remove undesired resonant effects, such as the frequency-dependent side lobes induced by resonances in dielectric coverings of antennas. Our work provides a guide for the design of ultrathin antireflection coatings as well as their applications in broadband reflectionless devices. PMID:27349750

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

PubMed

Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

2017-08-29

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

Direct graphene growth on MgO: origin of the band gap.

PubMed

Gaddam, Sneha; Bjelkevig, Cameron; Ge, Siping; Fukutani, Keisuke; Dowben, Peter A; Kelber, Jeffry A

2011-02-23

A 2.5 monolayer (ML) thick graphene film grown by chemical vapor deposition of thermally dissociated C(2)H(4) on MgO(111), displays a significant band gap. The apparent six-fold low energy electron diffraction (LEED) pattern actually consists of two three-fold patterns with different 'A' and 'B' site diffraction intensities. Similar effects are observed for the LEED patterns of a 1 ML carbon film derived from annealing adventitious carbon on MgO(111), and for a 1.5 ML thick graphene film grown by sputter deposition on the 1 ML film. The LEED data indicate different electron densities at the A and B sites of the graphene lattice, suggesting that the observed band gap results from lifting the graphene HOMO/LUMO degeneracy at the Dirac point. The data also indicate that disparities in A site/B site LEED intensities decrease with increasing carbon overlayer thickness, suggesting that the graphene band gap size decreases with increasing number of graphene layers on MgO(111). © 2011 IOP Publishing Ltd

Defect induced ferromagnetism in MgO nanoparticles studied by optical and positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Kumar, Nitesh; Sanyal, D.; Sundaresan, A.

2009-08-01

Positron annihilation spectroscopy has been used to explore the nature of defects and to estimate the defect concentrations in ferromagnetic MgO nanoparticles. Our experimental results show that Mg vacancies or Mg vacancy concentration are present approximately at the concentration of 3.4 × 10 16 cm -3 in the nano-crystalline MgO which is twice the value that obtained for bulk sample. This is in correlation with the decrease of the intensity of blue luminescence and the saturation magnetic moment with increasing particle size. These results clearly demonstrate that the origin of magnetic moment and thus the ferromagnetism in MgO nanoparticles is due to Mg related vacancies at the surface of the particles.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Nonlinearity, resonance, charging, and motion at the atomic scale studied with scanning tunneling microscopes

NASA Astrophysics Data System (ADS)

Tu, Xiuwen

2008-10-01

complexes controllably by voltage pulses. STM imaging and spectroscopy revealed precise information about the atomic and electronic structure of these cation-pi complexes. Finally, electron transport through single atoms and molecules in a double-barrier tunnel junction (DBTJ) was examined. Charge bistability was observed for single ZnEtioI molecules adsorbed in several different conformations on ultrathin aluminum oxide. A sudden decrease in local apparent barrier height (LABH) was observed at the onset of an adsorbate electronic orbital for single ZnEtioI molecules and Cs atoms supported by the ultrathin aluminum oxide. The resonant-tunneling model, which was proposed to explain the transition from NDR to the absence of NDR, was found useful in explaining the sudden decrease in LABH, too. NDR, bipolar tunneling, and vibronic states were also observed and discussed in the context of DBTJ.

The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys

NASA Technical Reports Server (NTRS)

Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.

2010-01-01

The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.

Interface effects in ultra-thin films: Magnetic and chemical properties

NASA Astrophysics Data System (ADS)

Park, Sungkyun

When the thickness of a magnetic layer is comparable to (or smaller than) the electron mean free path, the interface between magnetic and non-magnetic layers becomes very important factor to determine magnetic properties of the ultra-thin films. The quality of interface can enhance (or reduce) the desired properties. Several interesting physical phenomena were studied using these interface effects. The magnetic anisotropy of ultra-thin Co films is studied as function of non-magnetic underlayer thickness and non- magnetic overlayer materials using ex situ Brillouin light scattering (BLS). I observed that perpendicular magnetic anisotropy (PMA) increases with underlayer thickness and saturates after 5 ML. This saturation can be understood as a relaxation of the in-plane lattice parameter of Au(111) on top of Cu(111) to its bulk value. For the overlayer study, Cu, Al, and Au are used. An Au overlayer gives the largest PMA due to the largest in-plane lattice mismatch between Co and Au. An unusual effect was found by adding an additional layer on top of the Au overlayer. An additional Al capping layer on top of the Au overlayer reduces the PMA significantly. The possible explanation is that the misfit strain at the interface between the Al and the Au can be propagated through the Au layer to affect the magnetic properties of Co even though the in- plane lattice mismatch is less than 1%. Another interesting problem in interface interdiffusion and thermal stability in magnetic tunnel junction (MTJ) structures is studied using X-ray photoelectron spectroscopy (XPS). Since XPS is a very chemically sensitive technique, it allows us to monitor interface interdiffusion of the MTJ structures as-deposited and during post-deposition processing. For the plasma- oxidized samples, Fe only participates in the oxidation reduction process. In contrast to plasma-oxidized samples, there were no noticeable chemical shifts as- deposited and during post-deposition processing in air

Ultra-thin plasma radiation detector

DOEpatents

Friedman, Peter S.

2017-01-24

A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

Nano SiO2 and MgO improve the properties of porous β-TCP scaffolds via advanced manufacturing technology.

PubMed

Gao, Chengde; Wei, Pingpin; Feng, Pei; Xiao, Tao; Shuai, Cijun; Peng, Shuping

2015-03-25

Nano SiO2 and MgO particles were incorporated into β-tricalcium phosphate (β-TCP) scaffolds to improve the mechanical and biological properties. The porous cylindrical β-TCP scaffolds doped with 0.5 wt % SiO2, 1.0 wt % MgO, 0.5 wt % SiO2 + 1.0 wt % MgO were fabricated via selective laser sintering respectively and undoped β-TCP scaffold was also prepared as control. The phase composition and mechanical strength of the scaffolds were evaluated. X-ray diffraction analysis indicated that the phase transformation from β-TCP to α-TCP was inhibited after the addition of MgO. The compressive strength of scaffold was improved from 3.12 ± 0.36 MPa (β-TCP) to 5.74 ± 0.62 MPa (β-TCP/SiO2), 9.02 ± 0.55 MPa (β-TCP/MgO) and 10.43 ± 0.28 MPa (β-TCP/SiO2/MgO), respectively. The weight loss and apatite-forming ability of the scaffolds were evaluated by soaking them in simulated body fluid. The results demonstrated that both SiO2 and MgO dopings slowed down the degradation rate and improved the bioactivity of β-TCP scaffolds. In vitro cell culture studies indicated that SiO2 and MgO dopings facilitated cell attachment and proliferation. Combined addition of SiO2 and MgO were found optimal in enhancing both the mechanical and biological properties of β-TCP scaffold.

Nano SiO2 and MgO Improve the Properties of Porous β-TCP Scaffolds via Advanced Manufacturing Technology

PubMed Central

Gao, Chengde; Wei, Pingpin; Feng, Pei; Xiao, Tao; Shuai, Cijun; Peng, Shuping

2015-01-01

Nano SiO2 and MgO particles were incorporated into β-tricalcium phosphate (β-TCP) scaffolds to improve the mechanical and biological properties. The porous cylindrical β-TCP scaffolds doped with 0.5 wt % SiO2, 1.0 wt % MgO, 0.5 wt % SiO2 + 1.0 wt % MgO were fabricated via selective laser sintering respectively and undoped β-TCP scaffold was also prepared as control. The phase composition and mechanical strength of the scaffolds were evaluated. X-ray diffraction analysis indicated that the phase transformation from β-TCP to α-TCP was inhibited after the addition of MgO. The compressive strength of scaffold was improved from 3.12 ± 0.36 MPa (β-TCP) to 5.74 ± 0.62 MPa (β-TCP/SiO2), 9.02 ± 0.55 MPa (β-TCP/MgO) and 10.43 ± 0.28 MPa (β-TCP/SiO2/MgO), respectively. The weight loss and apatite-forming ability of the scaffolds were evaluated by soaking them in simulated body fluid. The results demonstrated that both SiO2 and MgO dopings slowed down the degradation rate and improved the bioactivity of β-TCP scaffolds. In vitro cell culture studies indicated that SiO2 and MgO dopings facilitated cell attachment and proliferation. Combined addition of SiO2 and MgO were found optimal in enhancing both the mechanical and biological properties of β-TCP scaffold. PMID:25815597

Structural, spectral, NLO and MEP analysis of the [MgO2Ti2(OPri)6], [MgO2Ti2(OPri)2(acac)4] and [MgO2Ti2(OPri)2(bzac)4] by DFT method

NASA Astrophysics Data System (ADS)

Sayin, Koray; Karakaş, Duran

2015-06-01

Quantum chemical calculations are performed on [MgO2Ti2(OPri)6] and [MgO2Ti2(OPri)2(L)4] complexes. L is acetylacetonate (acac) and benzoylacetonate (bzac) anion. The crystal structures of these complexes have not been obtained as experimentally but optimized structures of these complexes are obtained as theoretically in this study. Universal force field (UFF) and DFT/B3LYP method are used to obtain optimized structures. Theoretical spectral analysis (IR, 1H and 13C NMR) is compared with their experimental values. A good agreement is found between experimental and theoretical spectral analysis. These results mean that the optimized structures of mentioned complexes are appropriate. Additionally, the active sites of mentioned complexes are determined by molecular electrostatic potential (MEP) diagrams and non-linear optical (NLO) properties are investigated.

Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zeng, J. M.; Wang, H.; Shang, S. X.; Wang, Z.; Wang, M.

1996-12-01

Magnesium oxide (MgO) thin films have been prepared on Si(100), {SiO2(100) }/{Si} and {Pt(111) }/{Si} substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( Ts) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( Ts ≈ 400-680°C), {SiO2}/{Si} and {Pt}/{Si} were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.

Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galbiati, Marta; Tatay, Sergio; Delprat, Sophie

2015-02-23

Molecular and organic spintronics is an emerging research field which combines the versatility of chemistry with the non-volatility of spintronics. Organic materials have already proved their potential as tunnel barriers (TBs) or spacers in spintronics devices showing sizable spin valve like magnetoresistance effects. In the last years, a large effort has been focused on the optimization of these organic spintronics devices. Insertion of a thin inorganic tunnel barrier (Al{sub 2}O{sub 3} or MgO) at the bottom ferromagnetic metal (FM)/organic interface seems to improve the spin transport efficiency. However, during the top FM electrode deposition, metal atoms are prone to diffusemore » through the organic layer and potentially short-circuit it. This may lead to the formation of a working but undesired FM/TB/FM magnetic tunnel junction where the organic plays no role. Indeed, establishing a protocol to demonstrate the effective spin dependent transport through the organic layer remains a key issue. Here, we focus on Co/Al{sub 2}O{sub 3}/Alq{sub 3}/Co junctions and show that combining magnetoresistance and inelastic electron tunnelling spectroscopy measurements one can sort out working “organic” and short-circuited junctions fabricated on the same wafer.« less

Vacancies in MgO at ultrahigh pressure: About mantle rheology of super-Earths

NASA Astrophysics Data System (ADS)

Ritterbex, Sebastian; Harada, Takafumi; Tsuchiya, Taku

2018-05-01

First-principles calculations are performed to investigate vacancy formation and migration in the B2 phase of MgO. Defect energetics suggest the importance of intrinsic non-interacting vacancy pairs, even though the extrinsic vacancy concentration might govern atomic diffusion in the B2 phase of MgO. The enthalpies of ionic vacancy migration are generally found to decrease across the B1-B2 phase transition around a pressure of 500 GPa. It is shown that this enthalpy change induces a substantial increase in the rate of vacancy diffusion in MgO of almost four orders of magnitude (∼104) when the B1 phase transforms into the B2 phase with increasing pressure. If plastic deformation is controlled by vacancy diffusion, mantle viscosity is expected to decrease in relation to this enhanced diffusion rate in MgO across the B1-B2 transition in the interior of Earth-like large exoplanets. Our results of atomic relaxations near the defects suggest that diffusion controlled creep viscosity may generally decrease across high-pressure phase transitions with increasing coordination number. Plastic flow and resulting mantle convection in the interior of these super-Earths may be therefore less sluggish than previously thought.

Dissolution behavior of MgO based inert matrix fuel for the transmutation of minor actinides

NASA Astrophysics Data System (ADS)

Mühr-Ebert, E. L.; Lichte, E.; Bukaemskiy, A.; Finkeldei, S.; Klinkenberg, M.; Brandt, F.; Bosbach, D.; Modolo, G.

2018-07-01

This study explores the dissolution properties of magnesia-based inert matrix nuclear fuel (IMF) containing transuranium elements (TRU). Pure MgO pellets as well as MgO pellets containing CeO2, as surrogate for TRU oxides, and are considered as model systems for genuine magnesia based inert matrix fuel were fabricated. The aim of this study is to identify conditions at which the matrix material can be selectively dissolved during the head-end reprocessing step, allowing a separation of MgO from the actinides, whereas the actinides remain undissolved. The dissolution behavior was studied in macroscopic batch experiments as a function of nitric acid concentration, dissolution medium volume, temperature, stirring velocity, and pellet density (85, 90, 96, and 99%TD). To mimic pellets with various burn-ups the density of the here fabricated pellets was varied. MgO is soluble even under mild conditions (RT, 2.5 mol/L HNO3). The dissolution rates of MgO at different acid concentrations are rather similar, whereas the dissolution rate is strongly dependent on the temperature. Via a microscopic approach, a model was developed to describe the evolution of the pellet surface area during dissolution and determine a surface normalized dissolution rate. Moreover, dissolution rates of the inert matrix fuel containing CeO2 were determined as a function of the acid concentration and temperature. During the dissolution of MgO/CeO2 pellets the MgO dissolves completely, while CeO2 (>99%) remains undissolved. This study intends to provide a profound understanding of the chemical performance of magnesia based IMF containing fissile material. The feasibility of the dissolution of magnesia based IMF with nitric acid is discussed.

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

PubMed Central

Liu, Jianyi; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-01-01

This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc.) that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads. PMID:28788198

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, J.C.; Benson, D.K.; Tracy, C.E.

1996-03-26

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld. 5 figs.

Method for laser welding ultra-thin metal foils

DOEpatents

Pernicka, John C.; Benson, David K.; Tracy, C. Edwin

1996-01-01

A method for simultaneously cutting and welding ultra-thin foils having a thickness of less than 0.002 inches wherein two ultra-thin films are stacked and clamped together. A pulsed laser such as of the Neodymium: YAG type is provided and the beam of the laser is directed onto the stacked films to cut a channel through the films. The laser is moved relative to the stacked foils to cut the stacked foils at successive locations and to form a plurality of connected weld beads to form a continuous weld.

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Shim, Tae-Hun

We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However,more » the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.« less

Ultrathin Nickel Hydroxide and Oxide Nanosheets: Synthesis, Characterizations and Excellent Supercapacitor Performances

PubMed Central

Zhu, Youqi; Cao, Chuanbao; Tao, Shi; Chu, Wangsheng; Wu, Ziyu; Li, Yadong

2014-01-01

High-quality ultrathin two-dimensional nanosheets of α-Ni(OH)2 are synthesized at large scale via microwave-assisted liquid-phase growth under low-temperature atmospheric conditions. After heat treatment, non-layered NiO nanosheets are obtained while maintaining their original frame structure. The well-defined and freestanding nanosheets exhibit a micron-sized planar area and ultrathin thickness (<2 nm), suggesting an ultrahigh surface atom ratio with unique surface and electronic structure. The ultrathin 2D nanostructure can make most atoms exposed outside with high activity thus facilitate the surface-dependent electrochemical reaction processes. The ultrathin α-Ni(OH)2 and NiO nanosheets exhibit enhanced supercapacitor performances. Particularly, the α-Ni(OH)2 nanosheets exhibit a maximum specific capacitance of 4172.5 F g−1 at a current density of 1 A g−1. Even at higher rate of 16 A g−1, the specific capacitance is still maintained at 2680 F g−1 with 98.5% retention after 2000 cycles. Even more important, we develop a facile and scalable method to produce high-quality ultrathin transition metal hydroxide and oxide nanosheets and make a possibility in commercial applications. PMID:25168127

Hydrogen production from steam reforming of ethylene glycol over iron loaded on MgO

NASA Astrophysics Data System (ADS)

Chen, Mingqiang; Wang, Yishuang; Liang, Tian; Yang, Jie; Yang, Zhonglian

2017-01-01

In this study, a series of Fe-based catalysts loaded on MgO were prepared by a precipitation technique. And they were tested in hydrogen production from steam reforming of ethylene glycol (SRE), which was a representative model compound of fast bio-oil. The catalysts were characterized by XRD, SEM and H2-TPR analysis. The results showed that the crystalline phases of catalysts contained Fe2O3 (Hematite), Fe3O4 (Magnetite), Fe2MgO4 (iron magnesium oxide) and MgO, and morphology of MgO was changed from the rugby-ball like particles to spherical particles with the addition of Fe. In addition, the catalytic test results indicated that the 18%Fe/MgO catalyst exhibited the highest ethylene glycol conversion (˜99.8%) and H2 molar percent (˜77%) during at the following conditions: H2O/C molar ratio is 5˜7, the feeding rate is 14 mL/h and the reaction temperature at 600˜650°C. Furthermore, the 18%Fe/MgO catalyst can keep outstanding stability during SRE for 12 h.

Polyethylene Nanocomposites for the Next Generation of Ultralow-Transmission-Loss HVDC Cables: Insulation Containing Moisture-Resistant MgO Nanoparticles.

PubMed

Pourrahimi, Amir Masoud; Pallon, Love K H; Liu, Dongming; Hoang, Tuan Anh; Gubanski, Stanislaw; Hedenqvist, Mikael S; Olsson, Richard T; Gedde, Ulf W

2016-06-15

The use of MgO nanoparticles in polyethylene for cable insulation has attracted considerable interest, although in humid media the surface regions of the nanoparticles undergo a conversion to a hydroxide phase. A facile method to obtain MgO nanoparticles with a large surface area and remarkable inertness to humidity is presented. The method involves (a) low temperature (400 °C) thermal decomposition of Mg(OH)2, (b) a silicone oxide coating to conceal the nanoparticles and prevent interparticle sintering upon exposure to high temperatures, and (c) heat treatment at 1000 °C. The formation of the hydroxide phase on these silicone oxide-coated MgO nanoparticles after extended exposure to humid air was assessed by thermogravimetry, infrared spectroscopy, and X-ray diffraction. The nanoparticles showed essentially no sign of any hydroxide phase compared to particles prepared by the conventional single-step thermal decomposition of Mg(OH)2. The moisture-resistant MgO nanoparticles showed improved dispersion and interfacial adhesion in the LDPE matrix with smaller nanosized particle clusters compared with conventionally prepared MgO. The addition of 1 wt % moisture-resistant MgO nanoparticles was sufficient to decrease the conductivity of polyethylene 30 times. The reduction in conductivity is discussed in terms of defect concentration on the surface of the moisture-resistant MgO nanoparticles at the polymer/nanoparticle interface.

Direct peroral cholangioscopy using an ultrathin endoscope: making technique easier.

PubMed

Sola-Vera, Javier; Uceda, Francisco; Cuesta, Rubén; Vázquez, Narcís

2014-01-01

Cholangioscopy is a useful tool for the study and treatment of biliary pathology. Ultrathin upper endoscopes allow direct peroral cholangioscopy (DPC) but have some drawbacks. The aim of the study was to evaluate the success rate of DPC with an ultrathin endoscope using a balloon catheter to reach the biliary confluence. Prospective observational study. An ultrathin endoscope (Olympus XP180N, outer diameter 5.5 mm, working channel 2 mm) was used. To access the biliary tree, free-hand technique was used. To reach the biliary confluence an intraductal balloon catheter (Olympus B5-2Q diameter 1.9 mm) and a 0.025 inch guide wire was used. In all cases sphincterotomy and/or sphincteroplasty was performed. The success rate was defined as the percentage of cases in which the biliary confluence could be reached with the ultrathin endoscope. Fifteen patients (8 men/7 women) were included. Mean age was 77.7 + or - 10.8 years (range 45-91). The indications for cholangioscopy were suspected bile duct stones (n = 9), electrohydraulic lithotripsy for the treatment of difficult choledocholithiasis (n = 5) and evaluation of biliary stricture (n = 1). Access to the bile duct was achieved in 14/15 cases (93.3%). Biliary confluence was reached in 13/15 cases (86.7%). One complication was observed in one patient (oxigen desaturation). DPC with an ultrathin endoscope can be done with the free-hand technique. Intraductal balloon-guided DPC allows full examination of the common bile duct in most cases.

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

NASA Astrophysics Data System (ADS)

Miura, Sadahiko; Honjo, Hiroaki; Kinoshita, Keizo; Tokutome, Keiichi; Koike, Hiroaki; Ikeda, Shoji; Endoh, Tetsuo; Ohno, Hideo

2015-04-01

Perpendicular-anisotropy magnetic tunnel junctions (MTJs) were prepared on four substrate geometries, i.e., directly on the axis of the bottom electrode contact, directly off the axis of the bottom electrode contact, on the axis of the bottom electrode contact with a polished bottom electrode, and off the axis of the bottom electrode contact with a polished bottom electrode. Electrical shorts were observed for direct on-axis geometry at a certain extent, whereas there were no electrical shorts for the other three geometries. The MR ratio/σR, JC0, and thermal stability factor of the devices for polish on-axis geometry were almost the same as those for polish off-axis geometry. From TEM observations of the polish on-axis device, the interface between the bottom contact and the base electrode was determined to be rough, whereas the MgO barrier layer was determined to be smooth, indicating that the polish process was effective for smooth magnetic tunnel junction fabrication over the bottom contact. MTJs for polish on-axis geometry eliminated the base electrode resistance and increased the magnetoresistance ratio. This technology contributes to the higher density of spin transfer torque magnetic random access memory.

Controllable synthesis of ultrathin vanadium oxide nanobelts via an EDTA-mediated hydrothermal process

NASA Astrophysics Data System (ADS)

Yu-Xiang, Qin; Cheng, Liu; Wei-Wei, Xie; Meng-Yang, Cui

2016-02-01

Ultrathin VO2 nanobelts with rough alignment features are prepared on the induction layer-coated substrates by an ethylenediaminetetraacetic acid (EDTA)-mediated hydrothermal process. EDTA acts as a chelating reagent and capping agent to facilitate the one-dimensional (1D) preferential growth of ultrathin VO2 nanobelts with high crystallinities and good uniformities. The annealed induction layer and concentration of EDTA are found to play crucial roles in the formation of aligned and ultrathin nanobelts. Variation in EDTA concentration can change the VO2 morphology of ultrathin nanobelts into that of thick nanoplates. Mild annealing of ultrathin VO2 nanobelts at 350 °C in air results in the formation of V2O5 nanobelts with a nearly unchanged ultrathin structure. The nucleation and growth mechanism involved in the formations of nanobelts and nanoplates are proposed. The ethanol gas sensing properties of the V2O5 nanobelt networks-based sensor are investigated in a temperature range from 100 °C to 300 °C over ethanol concentrations ranging from 3 ppm to 500 ppm. The results indicate that the V2O5 nanobelt network sensor exhibits high sensitivity, good reversibility, and fast response-recovery characteristics with an optimal working temperature of 250 °C. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274074, 61271070, and 61574100).

Structural and optical characterization of Er-alkali-metals codoped MgO nanoparticles synthesized by solution combustion route

NASA Astrophysics Data System (ADS)

Sivasankari, J.; Selvakumar Sellaiyan, S.; Sankar, S.; Devi, L. Vimala; Sivaji, K.

2017-01-01

Pure MgO, rare-earth (Er) doped MgO (MgO:Er), and alkali metal ions (Li, Na and K) co-doped MgO:Er [i.e. MgO: Er+X (X=Li, Na, and K)] nanopowders were synthesized by solution combustion method and characterized. The XRD analysis reveals the cubic structure and the substitution of dopants and co-dopants in MgO. Annealing at 800 °C, increases the sizes of nano-crystallites of all samples appreciably, indicating the grain growth and the improvement in crystallinity of all the samples. Increase in lattice parameter, d spacing and band gap were observed after annealing. Structural and morphological analysis using scanning electron microscope (SEM) and transmission electron microscope (TEM) studies has shown that the samples contain structures like agglomerated clusters. FT-IR spectra confirm the stretching mode of hydroxyl groups, carbonate and presence of MgO bonding. The characteristic wavelength ranging from 2600 cm-1 to 3000 cm-1 were assigned to transition of 4S3/2→4I13/2 and 4I11/2→4I15/2 of Er3+.

Periodic DFT study of acidic trace atmospheric gas molecule adsorption on Ca- and Fe-doped MgO(001) surface basic sites.

PubMed

Baltrusaitis, Jonas; Hatch, Courtney; Orlando, Roberto

2012-08-02

The electronic properties of undoped and Ca- or Fe-doped MgO(001) surfaces, as well as their propensity toward atmospheric acidic gas (CO2, SO2, and NO2) uptake was investigated with an emphasis on gas adsorption on the basic MgO oxygen surface sites, O(surf), using periodic density functional theory (DFT) calculations. Adsorption energy calculations show that MgO doping will provide stronger interactions of the adsorbate with the O(surf) sites than the undoped MgO for a given adsorbate molecule. Charge transfer from the iron atom in Fe-doped MgO(001) to NO2 was shown to increase the binding interaction between adsorbate by an order of magnitude, when compared to that of undoped and Ca-doped MgO(001) surfaces. Secondary binding interactions of adsorbate oxygen atoms were observed with surface magnesium sites at distances close to those of the Mg-O bond within the crystal. These interactions may serve as a preliminary step for adsorption and facilitate further adsorbate transformations into other binding configurations. Impacts on global atmospheric chemistry are discussed as these adsorption phenomena can affect atmospheric gas budgets via altered partitioning and retention on mineral aerosol surfaces.

Periodic DFT study of acidic trace atmospheric gas molecule adsorption on Ca and Fe doped MgO (001) surface basic sites

PubMed Central

Hatch, Courtney; Orlando, Roberto

2012-01-01

The electronic properties of undoped and Ca or Fe doped MgO (001) surfaces, as well as their propensity towards atmospheric acidic gas (CO2, SO2 and NO2) uptake was investigated with an emphasis on gas adsorption on the basic MgO oxygen surface sites, Osurf, using periodic Density Functional Theory (DFT) calculations. Adsorption energy calculations show that MgO doping will provide stronger interactions of the adsorbate with the Osurf sites than the undoped MgO for a given adsorbate molecule. Charge transfer from the iron atom in Fe doped MgO (001) to NO2 was shown to increase the binding interaction between adsorbate by an order of magnitude, when compared to that of undoped and Ca doped MgO (001) surfaces. Secondary binding interactions of adsorbate oxygen atoms were observed with surface magnesium sites at distances close to those of the Mg-O bond within the crystal. These interactions may serve as a preliminary step for adsorption and facilitate further adsorbate transformations into other binding configurations. Impacts on global atmospheric chemistry are discussed as these adsorption phenomena can affect atmospheric gas budgets via altered partitioning and retention on mineral aerosol surfaces. PMID:22775293

Crystal orientation of monoclinic β-Ga2O3 thin films formed on cubic MgO substrates with a γ-Ga2O3 interfacial layer

NASA Astrophysics Data System (ADS)

Nakagomi, Shinji; Kokubun, Yoshihiro

2017-12-01

The crystal orientation relationship between β-Ga2O3 and MgO in β-Ga2O3 thin films prepared on (1 0 0), (1 1 1), and (1 1 0) MgO substrates was investigated by X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The γ-Ga2O3 interfacial layer was present between β-Ga2O3 and MgO acted as a buffer to connect β-Ga2O3 on MgO. The following conditions were satisfied under each case: β-Ga2O3 (1 0 0)||MgO (1 0 0) and β-Ga2O3 [0 0 1]||MgO 〈0 1 1〉 for the formation of β-Ga2O3 on (1 0 0) MgO, and β-Ga2O3 (2 bar 0 1)||MgO (1 1 1) for the formation of β-Ga2O3 on (1 1 1) MgO, as well as each condition of β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 bar 1 0 ] (0 0 1), β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 0 1 bar 1 ] (1 0 0), and β-Ga2O3 [0 1 0] (1 0 0)||MgO [ 1 0 1 bar ] (0 1 0). β-Ga2O3 (1 bar 0 2)||MgO(1 1 0) and β-Ga2O3 [0 1 0] ⊥ MgO [0 0 1] for β-Ga2O3 formed on (1 1 0) MgO. The β-Ga2O3 formed on (1 1 1) MgO at 800 °C exhibited a threefold structure. The β-Ga2O3 formed on (1 1 0) MgO had a twofold structure but different by 90° from the result reported previously.

Magnetic anisotropy modulation of epitaxial Fe3O4 films on MgO substrates

NASA Astrophysics Data System (ADS)

Chichvarina, O.; Herng, T. S.; Xiao, W.; Hong, X.; Ding, J.

2015-05-01

Fe3O4 has been widely studied because of its great potential in spintronics and other applications. As a magnetic electrode, it is highly desired if magnetic anisotropy can be controlled. Here, we report the results from our systematic study on the magnetic properties of magnetite (Fe3O4) thin films epitaxially grown on various MgO substrates. Strikingly, we observed a prominent perpendicular magnetic anisotropy in Fe3O4 film deposited on MgO (111) substrate. When measured in out-of-plane direction, the film (40 nm thick) exhibits a well-defined square hysteresis loop with coercivity (Hc) above 1 kOe, while much lower coercivity was obtained in the in-plane orientation. In sharp contrast, the films deposited onto MgO (100) and MgO (110) substrates show in-plane magnetic anisotropy. These films exhibit a typical soft magnet characteristic—Hc lies within the range of 200-400 Oe. All the films showed a clear Verwey transition near 120 K—a characteristic of Fe3O4 material. In addition, a series of magnetoresistance (MR) measurements is performed and the MR results are in good agreement with the magnetic observations. The role of the substrate orientation and film thickness dependency is also investigated.

Molecular dynamics simulation on adsorption of pyrene-polyethylene onto ultrathin single-walled carbon nanotube

NASA Astrophysics Data System (ADS)

Cai, Lu; Lv, Wenzhen; Zhu, Hong; Xu, Qun

2016-07-01

The mechanism of the adsorption of pyrene-polyethylene (Py-PE) onto ultrathin single-walled carbon nanotube (SWNT) was studied by using all-atom molecular dynamics (MD) simulations. We found that solvent polarity and pyrene group are two critical factors in the Py-PE decoration on ultrathin SWNT. Combined MD simulations with free energy calculations, our results indicate that larger solvent polarity can decrease the contribution of conformation entropy, but contributes little to the interaction energy, moreover, larger SWNT diameter can decrease the contribution of conformation entropy but lead to the increasing of the interaction energy. In polar organic solvent (N, N-Dimethylacetamide), the pyrene group plays a key role in the adsorption of Py-PE onto ultrathin SWNT, not only facilitates the spontaneous adsorption of Py-PE onto ultrathin SWNT, but also helps to form compact structure between themselves in the final adsorption states. While in aqueous solution, pyrene group no longer works as an anchor, but still affects a lot to the final adsorption conformation. Our present work provides detailed theoretical clue to understand the noncovalent interaction between aromatic segment appended polymer and ultrathin SWNT, and helps to explore the potential application of ultrathin SWNT in the fields of hybrid material, biomedical and electronic materials.

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

NASA Technical Reports Server (NTRS)

Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

1998-01-01

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Application of flowerlike MgO for highly sensitive determination of lead via matrix-assisted laser desorption/ionization mass spectrometry.

PubMed

Hou, Jian; Chen, Suming; Cao, Changyan; Liu, Huihui; Xiong, Caiqiao; Zhang, Ning; He, Qing; Song, Weiguo; Nie, Zongxiu

2016-08-01

Matrix-assisted laser desorption/ionization mass spectrometry (MALDI MS) is a high-throughput method to achieve fast and accurate identification of lead (Pb) exposure, but is seldom used because of low ionization efficiency and insufficient sensitivity. Nanomaterials applied in MS are a promising technique to overcome the obstacles of MALDI. Flowerlike MgO nanostructures are applied for highly sensitive lead profiling in real samples. They can be used in two ways: (a) MgO is mixed with N-naphthylethylenediamine dihydrochloride (NEDC) as a novel matrix MgO/NEDC; (b) MgO is applied as an absorbent to enrich Pb ions in very dilute solution. The signal intensities of lead by MgO/NEDC were ten times higher than the NEDC matrix. It also shows superior anti-interference ability when analyzing 10 μmol/L Pb ions in the presence of organic substances or interfering metal ions. By applying MgO as adsorbent, the LOD of lead before enrichment is 1 nmol/L. Blood lead test can be achieved using this enrichment process. Besides, MgO can play the role of internal standard to achieve quantitative analysis. Flowerlike MgO nanostructures were applied for highly sensitive lead profiling in real samples. The method is helpful to prevent Pb contamination in a wide range. Further, the combination of MgO with MALDI MS could inspire more nanomaterials being applied in highly sensitive profiling of pollutants. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

A Comparative Study of Chemically and Biologically Synthesized MgO Nanomaterial for Liquefied Petroleum Gas Detection

NASA Astrophysics Data System (ADS)

Thirupathi, Rampelly; Solleti, Goutham; Sreekanth, Tirumala; Sadasivuni, Kishor Kumar; Venkateswara Rao, Kalagadda

2018-03-01

The exceptional chemical and physical properties of nanostructured materials are extremely suitable for designing new and enhanced sensing devices, particularly gas sensors and biosensors. The present work describes the synthesis of magnesium oxide (MgO) nanoparticles through two methods: a green synthesis using aloe vera plant extract and a chemical method using a glycine-based solution combustion route. In a single step, the extracted organic molecules from aloe vera plants were used to reduce metal ions by the green method. MgO nanoparticles were coated onto the interdigital electrode using the drop-drying method. The dynamic gas-sensing characteristics were measured for liquefied petroleum gas (LPG) at different concentrations and various temperatures. The MgO nanoparticles were characterized by using x-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy to determine the size and structure of the particles. The product's functional properties were analyzed by Fourier transform-infrared spectroscopy and UV-visible spectroscopy. We found that the LPG sensing behavior of biologically synthesized MgO registers excellent sensitivity at various operating temperatures.

A Comparative Study of Chemically and Biologically Synthesized MgO Nanomaterial for Liquefied Petroleum Gas Detection

NASA Astrophysics Data System (ADS)

Thirupathi, Rampelly; Solleti, Goutham; Sreekanth, Tirumala; Sadasivuni, Kishor Kumar; Venkateswara Rao, Kalagadda

2018-07-01

The exceptional chemical and physical properties of nanostructured materials are extremely suitable for designing new and enhanced sensing devices, particularly gas sensors and biosensors. The present work describes the synthesis of magnesium oxide (MgO) nanoparticles through two methods: a green synthesis using aloe vera plant extract and a chemical method using a glycine-based solution combustion route. In a single step, the extracted organic molecules from aloe vera plants were used to reduce metal ions by the green method. MgO nanoparticles were coated onto the interdigital electrode using the drop-drying method. The dynamic gas-sensing characteristics were measured for liquefied petroleum gas (LPG) at different concentrations and various temperatures. The MgO nanoparticles were characterized by using x-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy to determine the size and structure of the particles. The product's functional properties were analyzed by Fourier transform-infrared spectroscopy and UV-visible spectroscopy. We found that the LPG sensing behavior of biologically synthesized MgO registers excellent sensitivity at various operating temperatures.

High-Performance Ultrathin Active Chiral Metamaterials.

PubMed

Wu, Zilong; Chen, Xiaodong; Wang, Mingsong; Dong, Jianwen; Zheng, Yuebing

2018-05-22

Ultrathin active chiral metamaterials with dynamically tunable and responsive optical chirality enable new optical sensors, modulators, and switches. Herein, we develop ultrathin active chiral metamaterials of highly tunable chiroptical responses by inducing tunable near-field coupling in the metamaterials and exploit the metamaterials as ultrasensitive sensors to detect trace amounts of solvent impurities. To demonstrate the active chiral metamaterials mediated by tunable near-field coupling, we design moiré chiral metamaterials (MCMs) as model metamaterials, which consist of two layers of identical Au nanohole arrays stacked upon one another in moiré patterns with a dielectric spacer layer between the Au layers. Our simulations, analytical fittings, and experiments reveal that spacer-dependent near-field coupling exists in the MCMs, which significantly enhances the spectral shift and line shape change of the circular dichroism (CD) spectra of the MCMs. Furthermore, we use a silk fibroin thin film as the spacer layer in the MCM. With the solvent-controllable swelling of the silk fibroin thin films, we demonstrate actively tunable near-field coupling and chiroptical responses of the silk-MCMs. Impressively, we have achieved the spectral shift over a wavelength range that is more than one full width at half-maximum and the sign inversion of the CD spectra in a single ultrathin (1/5 of wavelength in thickness) MCM. Finally, we apply the silk-MCMs as ultrasensitive sensors to detect trace amounts of solvent impurities down to 200 ppm, corresponding to an ultrahigh sensitivity of >10 5 nm/refractive index unit (RIU) and a figure of merit of 10 5 /RIU.

Process for growing a film epitaxially upon a MgO surface

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1997-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Self-healing of drying shrinkage cracks in cement-based materials incorporating reactive MgO

NASA Astrophysics Data System (ADS)

Qureshi, T. S.; Al-Tabbaa, A.

2016-08-01

Excessive drying shrinkage is one of the major issues of concern for longevity and reduced strength performance of concrete structures. It can cause the formation of cracks in the concrete. This research aims to improve the autogenous self-healing capacity of traditional Portland cement (PC) systems, adding expansive minerals such as reactive magnesium oxide (MgO) in terms of drying shrinkage crack healing. Two different reactive grades (high ‘N50’and moderately high ‘92-200’) of MgO were added with PC. Cracks were induced in the samples with restraining end prisms through natural drying shrinkage over 28 days after casting. Samples were then cured under water for 28 and 56 days, and self-healing capacity was investigated in terms of mechanical strength recovery, crack sealing efficiency and improvement in durability. Finally, microstructures of the healing materials were investigated using FT-IR, XRD, and SEM-EDX. Overall N50 mixes show higher expansion and drying shrinkage compared to 92-200 mixes. Autogenous self-healing performance of the MgO containing samples were much higher compared to control (only PC) mixes. Cracks up to 500 μm were sealed in most MgO containing samples after 28 days. In the microstructural investigations, highly expansive Mg-rich hydro-carbonate bridges were found along with traditional calcium-based, self-healing compounds (calcite, portlandite, calcium silicate hydrates and ettringite).

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Z. H., E-mail: zhaohui@physics.umanitoba.ca; Bai, Lihui; Hu, C.-M.

2015-03-15

The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, itsmore » angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.« less

Fabrication of Large-area Free-standing Ultrathin Polymer Films

PubMed Central

Stadermann, Michael; Baxamusa, Salmaan H.; Aracne-Ruddle, Chantel; Chea, Maverick; Li, Shuaili; Youngblood, Kelly; Suratwala, Tayyab

2015-01-01

This procedure describes a method for the fabrication of large-area and ultrathin free-standing polymer films. Typically, ultrathin films are prepared using either sacrificial layers, which may damage the film or affect its mechanical properties, or they are made on freshly cleaved mica, a substrate that is difficult to scale. Further, the size of ultrathin film is typically limited to a few square millimeters. In this method, we modify a surface with a polyelectrolyte that alters the strength of adhesion between polymer and deposition substrate. The polyelectrolyte can be shown to remain on the wafer using spectroscopy, and a treated wafer can be used to produce multiple films, indicating that at best minimal amounts of the polyelectrolyte are added to the film. The process has thus far been shown to be limited in scalability only by the size of the coating equipment, and is expected to be readily scalable to industrial processes. In this study, the protocol for making the solutions, preparing the deposition surface, and producing the films is described. PMID:26066738

A novel reduced symmetry oxide (Mg3B2O6) for magnetic tunnel junctions based on FeCo or Fe leads

NASA Astrophysics Data System (ADS)

Stewart, Derek

2010-03-01

Magnetic tunnel junctions with high TMR values, such as FeMgOFe, capitalize on spin filtering in the oxide due to the band symmetry of incident electrons. However, these structures rely on magnetic leads and oxide regions of the same cubic symmetry class. This raises the question of whether reducing the oxide symmetry can enhance spin filtering. A new magnetic tunnel junction (FeCoMg3B2O6FeCo) is presented that uses a reduced symmetry oxide region (orthorhombic) to filter spins between two cubic magnetic leads. Symmetry analysis of coupling between states in the cubic leads and the orthorhombic oxide indicates that majority carrier tunneling through the oxide should be favored over minority carriers. Complex band structure analysis of Mg3B2O6 shows that the relevant evanescent states in the band gap are due to boron p states and that there is sufficient difference in the decay rates of the imaginary bands for spin filtering to occur. Electronic transport calculations through a FeMg3B2O6Fe magnetic tunnel junction are also performed to address the possible influence of interface states. Some recent experimental studies of FeCoBMgOFeCoB junctions, with B diffusion into the MgO region, indicate that this new type of junction may have already been fabricated. The prospect of developing a general class of magnetic tunnel junctions based on reduced symmetry oxides is also examined.

Effects of MgO on the Reduction of Vanadium Titanomagnetite Concentrates with Char

NASA Astrophysics Data System (ADS)

Chen, Chao; Sun, TiChang; Wang, XiaoPing; Hu, TianYang

2017-10-01

The effects of MgO on the carbothermic reduction behavior of vanadium titanomagnetite concentrates (VTC) from Chengde, China, were investigated via temperature-programmed heating under nitrogen atmosphere in a sealed furnace. Gaseous product content was measured by using an infrared gas analyzer, and it was found that the addition of MgO to VTC with char decreased the reduction rate and reduction degree, and the utilization of CO in VTC reduction was also reduced. X-ray diffraction results showed that magnesium titanate (Mg2TiO4) was formed but FeTi2O5 was not observed in the VTC reduction process by adding 6 wt.% MgO, which can be explained by thermodynamic analysis. Scanning electron microscopy revealed that the enrichment of Mg in the unreacted core was the main reason that the further reduction of VTC was restricted. However, comparatively pure particles of Mg2TiO4 were generated, and the titanium and iron were separated well due to the combination of magnesium and titanium.

Electron microscopy and positron annihilation study of CdSe nanoclusters embedded in MgO

NASA Astrophysics Data System (ADS)

van Huis, M. A.; van Veen, A.; Schut, H.; Eijt, S. W. H.; Kooi, B. J.; De Hosson, J. Th. M.

2004-06-01

CdSe nanoclusters are created in MgO by means of co-implantation of 280 keV, 1 × 10 16 Cd ions cm -2 and 210 keV, 1 × 10 16 Se ions cm -2 in single crystals of MgO(0 0 1) and subsequent thermal annealing at a temperature of 1300 K. The structural properties and the orientation relationship between the CdSe and the MgO are investigated using cross-sectional transmission electron microscopy (XTEM). The crystal structure of the nanoclusters depends on their size. The smallest nanoclusters with a size below 5 nm have the cubic rocksalt crystal structure. The larger nanoclusters have a different (most likely the cubic sphalerite) crystal structure. The defect evolution in the sample after ion implantation and during thermal annealing is investigated using Doppler broadening positron beam analysis (PBA). The defect evolution in samples co-implanted with Cd and Se is compared to the defect evolution in samples implanted with only Cd or only Se ions.

SO2 Initiates the Efficient Conversion of NO2 to HONO on MgO Surface.

PubMed

Ma, Qingxin; Wang, Tao; Liu, Chang; He, Hong; Wang, Zhe; Wang, Weihao; Liang, Yutong

2017-04-04

Nitrous acid (HONO) is an important source of hydroxyl radical (OH) that determines the fate of many chemically active and climate relevant trace gases. However, the sources and the formation mechanisms of HONO remain poorly understood. In this study, the effect of SO 2 on the heterogeneous reactions of NO 2 on MgO as a mineral dust surrogate was investigated. The reactivity of MgO to NO 2 is weak, while coexisting SO 2 can increase the uptake coefficients of NO 2 on MgO by 2-3 orders of magnitude. The uptake coefficients of NO 2 on SO 2 -aged MgO are independent of NO 2 concentrations in the range of 20-160 ppbv and relative humidity (0-70%RH). The reaction mechanism was demonstrated to be a redox reaction between NO 2 and surface sulfite. In the presence of SO 2 , NO 2 was reduced to nitrite under dry conditions, which could be further converted to gas-phase HONO in humid conditions. These results suggest that the reductive effect of SO 2 on the heterogeneous conversion of NO 2 to HONO may have a significant contribution to the unknown sources of HONO observed in polluted areas (for example, in China).

Ultrathin zoom lens system based on liquid lenses

NASA Astrophysics Data System (ADS)

Li, Lei; Liu, Chao; Wang, Qiong-Hua

2015-07-01

In this paper, we propose an ultrathin zoom lens system based on liquid lenses. The proposed system consists of an annular folded lens and three electrowetting liquid lenses. The annular folded lens has several concentric surfaces. The annular folded lens is used to get the main power and correct aberrations. The three liquid lenses are used to change the focal length and correct aberration. An analysis of the proposed system is presented along with the design, fabrication, and testing of a prototype. All the elements in the proposed system are very thin, so the system is an ultrathin zoom lens system, which has potential application as lightweight, thin, high-quality imagers for aerospace, consumer, and military applications.

Physicochemically functional ultrathin films by interfacial polymerization

DOEpatents

Lonsdale, Harold K.; Babcock, Walter C.; Friensen, Dwayne T.; Smith, Kelly L.; Johnson, Bruce M.; Wamser, Carl C.

1990-01-01

Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclsoed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers.

Nanoscale control of reversible chemical reaction between fullerene C60 molecules using scanning tunneling microscope.

PubMed

Nakaya, Masato; Kuwahara, Yuji; Aono, Masakazu; Nakayama, Tomonobu

2011-04-01

The nanoscale control of reversible chemical reactions, the polymerization and depolymerization between C60 molecules, has been investigated. Using a scanning tunneling microscope (STM), the polymerization and depolymerization can be controlled at designated positions in ultrathin films of C60 molecules. One of the two chemical reactions can be selectively induced by controlling the sample bias voltage (V(s)); the application of negative and positive values of V(s) results in polymerization and depolymerization, respectively. The selectivity between the two chemical reactions becomes extremely high when the thickness of the C60 film increases to more than three molecular layers. We conclude that STM-induced negative and positive electrostatic ionization are responsible for the control of the polymerization and depolymerization, respectively.

Selected Growth of Cubic and Hexagonal GaN Epitaxial Films on Polar MgO(111)

NASA Astrophysics Data System (ADS)

Lazarov, V. K.; Zimmerman, J.; Cheung, S. H.; Li, L.; Weinert, M.; Gajdardziska-Josifovska, M.

2005-06-01

Selected molecular beam epitaxy of zinc blende (111) or wurtzite (0001) GaN films on polar MgO(111) is achieved depending on whether N or Ga is deposited first. The cubic stacking is enabled by nitrogen-induced polar surface stabilization, which yields a metallic MgO(111)-(1×1)-ON surface. High-resolution transmission electron microscopy and density functional theory studies indicate that the atomically abrupt semiconducting GaN(111)/MgO(111) interface has a Mg-O-N-Ga stacking, where the N atom is bonded to O at a top site. This specific atomic arrangement at the interface allows the cubic stacking to more effectively screen the substrate and film electric dipole moment than the hexagonal stacking, thus stabilizing the zinc blende phase even though the wurtzite phase is the ground state in the bulk.

Patterned FePt nanostructures using ultrathin self-organized templates

NASA Astrophysics Data System (ADS)

Deng, Chen Hua; Zhang, Min; Wang, Fang; Xu, Xiao Hong

2018-02-01

Patterned magnetic thin films are both scientifically interesting and technologically useful. Ultrathin self-organized anodic aluminum oxide (AAO) template can be used to fabricate large area nanodot and antidot arrays. The magnetic properties of these nanostructures may be tuned by the morphology of the AAO template, which in turn can be controlled by synthetic parameters. In this work, ultrathin AAO templates were used as etching masks for the fabrication of both FePt nanodot and antidot arrays with high areal density. The perpendicular magnetic anisotropy of L10 FePt thin films are preserved in the nanostructures.

Generalized Self-Doping Engineering towards Ultrathin and Large-Sized Two-Dimensional Homologous Perovskites.

PubMed

Chen, Junnian; Wang, Yaguang; Gan, Lin; He, Yunbin; Li, Huiqiao; Zhai, Tianyou

2017-11-20

Two-dimensional (2D) homologous perovskites are arousing intense interest in photovoltaics and light-emitting fields, attributing to significantly improved stability and increasing optoelectronic performance. However, investigations on 2D homologous perovskites with ultrathin thickness and large lateral dimension have been seldom reported, being mainly hindered by challenges in synthesis. A generalized self-doping directed synthesis of ultrathin 2D homologous (BA) 2 (MA) n-1 Pb n Br 3n+1 (1Ultrathin (BA) 2 (MA) n-1 Pb n Br 3n+1 perovskites are formed via an intercalation-merging mechanism, with thickness shrinking down to 4.2 nm and the lateral dimension to 57 μm. The ultrathin 2D homologous (BA) 2 (MA) n-1 Pb n Br 3n+1 perovskites are potential materials for photodetectors with promising photoresponse and stability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

XRD investigation of the Effect of MgO Additives on ZTA-TiO2 Ceramic Composites

NASA Astrophysics Data System (ADS)

Azhar, Ahmad Zahirani Ahmad; Manshor, Hanisah; Ali, Afifah Mohd

2018-01-01

Alumina (Al2O3) based ceramics possess good mechanical properties and suitable for the application of cutting inserts. However, this monolithic ceramics suffer from lack of toughness. Hence, there are some modification were made such as the addition of yttria stabilized zirconia (YSZ) to the Al2O3 helps in increasing the toughness of the Al2O3 ceramics. Some additives such as MgO and TiO2 were used to further improve the mechanical properties of ZTA. In this study, high purity raw materials which consist of ZTA-TiO2 were mixed with different amount of MgO (0.0 - 1.0 wt %). The mixture of materials was going through wet mixing, compaction and pressureless sintering at 1600°C for one hour. The samples were characterized for phase analysis, microstructure, shrinkage rate, bulk density, Vickers hardness and fracture toughness. Based on the XRD analysis results, the secondary phase (MgAl2O4) was detected in the sample with 0.5 wt% of MgO onwards which leads to grains refinement, thus improve the density and hardness of ZTA-TiO2-MgO ceramics composites.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

MgO melting curve constraints from shock temperature and rarefaction overtake measurements in samples preheated to 2300 K

NASA Astrophysics Data System (ADS)

Fat'yanov, O.; Asimow, P.

2013-06-01

In a continuous effort to determine experimentally the melting curve of MgO at 100-200 GPa, we extended our target preheating capability to 2300 K. The limit was primarily caused by intense sublimation of pure MgO in vacuum above ~2050 K. Completely redesigned Mo capsules holding ~20 mm long MgO crystals with controlled thermal gradients were impacted by thin Ta flyers launched at 6.5 to 7.5 km/s on the Caltech two-stage light-gas gun. Radiative shock temperatures and rarefaction overtake times were measured simultaneously by a 6-channel pyrometer with 3 ns time resolution, over 440-750 nm spectral range. All our experiments showed smooth pressure dependence of MgO sound speed consistent with the solid phase at 204-239 GPa. Observed temperatures are ~1000 K lower than those predicted by the solid phase model, but the plot of measured shock temperature versus pressure exhibits a pattern typical of shock melting at the highest pressure investigated. This may suggest that the Hugoniot of MgO preheated to 2300 K crosses its melting line at 220-240 GPa. Sound speed data indistinguishable from the solid phase model do not exclude the possibility of melting there.

Physicochemically functional ultrathin films by interfacial polymerization

DOEpatents

Lonsdale, H.K.; Babcock, W.C.; Friensen, D.T.; Smith, K.L.; Johnson, B.M.; Wamser, C.C.

1990-08-14

Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclosed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers. 3 figs.

Tunneling Diode Based on WSe2 /SnS2 Heterostructure Incorporating High Detectivity and Responsivity.

PubMed

Zhou, Xing; Hu, Xiaozong; Zhou, Shasha; Song, Hongyue; Zhang, Qi; Pi, Lejing; Li, Liang; Li, Huiqiao; Lü, Jingtao; Zhai, Tianyou

2018-02-01

van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe 2 /SnS 2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe 2 /SnS 2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe 2 /SnS 2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 10 13 Jones (I ph /I dark ratio of ≈10 6 ) and photoresponsivity of 244 A W -1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm -2 ). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermodynamic and Neutron Scattering Investigation of Ethylene Wetting on MgO (100)

NASA Astrophysics Data System (ADS)

Barbour, Andi; Brown, Craig; Larese, J. Z.

2008-03-01

The adsorption properties of a molecular film on a solid substrate are governed by the relative strength of the molecule-substrate versus molecule-molecule interaction. The wetting properties of ethylene (C2H4) molecular thin films on graphite are of fundamental interest because the number of observed adlayers increases as the isothermal temperature increases with T<=104K (bulk triple point). In adsorbate/substrate systems like C2H4/graphite, it is accepted that triple point wetting occurs. For our studies, we employed MgO nanocubes because they represent a prototypical metal oxide with a wide variety of technological uses including catalyst support. Of particular interest are wetting/layering transitions and the changes that take place in the neighborhood of the bulk triple point. We report our experimental investigation of the adsorption behavior of evidence C2H4 on MgO (100) using high-precision adsorption isotherms and neutron diffraction and scattering. We demonstrate the dominate role that molecule-molecule interaction plays in the wetting phenomena by comparing the behavior of ethylene on graphite and MgO. U.S. Department of Energy (DE-AC05-00OR22725) at ORNL managed and operated by UT-Battelle, LLC, and the NSF (DMR-0412231).

Study of interlayer coupling between FePt and FeCoB thin films through MgO spacer layer

NASA Astrophysics Data System (ADS)

Singh, Sadhana; Kumar, Dileep; Gupta, Mukul; Reddy, V. Raghvendra

2017-05-01

Interlayer exchange coupling between hard-FePt and soft-FeCoB magnetic layers has been studied with increasing thickness of insulator MgO spacer layer in FePt/MgO/FeCoB sandwiched structure. A series of the samples were prepared in identical condition using ion beam sputtering method and characterized for their magnetic and structural properties using magneto-optical Kerr effect (MOKE) and X-ray reflectivity measurements. The nature of coupling between FePt and FeCoB was found to be ferromagnetic which decreases exponentially with increasing thickness of MgO layer. At very low thickness of MgO layer, both layers were found strongly coupled thus exhibiting coherent magnetization reversal. At higher thickness, both layers were found decoupled and magnetization reversal occurred at different switching fields. Strong coupling at very low thickness is attributed to pin holes in MgO layer which lead to direct coupling whereas on increasing thickness, coupling may arise due to magneto-static interactions.

Role of basic and acidic centers of MgO and modified MgO in catalytic transfer hydrogenation of ketones studied by infrared spectroscopy

NASA Astrophysics Data System (ADS)

Szöllösi, György; Bartók, Mihály

1999-05-01

In this study our aim was to identify the active sites and the surface species responsible for deactivation of MgO during catalytic transfer hydrogenations (CTH) of ketones using alcohols as hydrogen donors. Our previous studies showed that deactivation of MgO could be prevented by previous treatment with chloromethanes. Therefore the surface species formed during the reaction were studied before and after treatment with chloroform or chloroform- d by in situ infrared spectroscopy (IR). As a result, it was concluded that the reaction requires the presence of surface basic and acidic centers. The presence of Lewis acid centers was not necessary, the reaction could proceed on weakly acidic surface Brönsted sites, as the alterations in intensity and position of the ν(OH) bands indicated. Modification with chloroform resulted also in the generation of surface OH groups with a proper acidity for the reaction. The shift in carbonyl vibrations led us to the conclusion that Lewis acid and base centers were responsible for the catalyst poisoning, so covering these acid sites by Cl - led to a stable catalyst.

F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

NASA Astrophysics Data System (ADS)

Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

1981-07-01

Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

A first-principles and experimental study of helium diffusion in periclase MgO

NASA Astrophysics Data System (ADS)

Song, Zhewen; Wu, Henry; Shu, Shipeng; Krawczynski, Mike; Van Orman, James; Cherniak, Daniele J.; Bruce Watson, E.; Mukhopadhyay, Sujoy; Morgan, Dane

2018-02-01

The distribution of He isotopes is used to trace heterogeneities in the Earth's mantle, and is particularly useful for constraining the length scale of heterogeneity due to the generally rapid diffusivity of helium. However, such an analysis is challenging because He diffusivities are largely unknown in lower mantle phases, which can influence the He profiles in regions that cycle through the lower mantle. With this motivation, we have used first-principles simulations based on density functional theory to study He diffusion in MgO, an important lower mantle phase. We first studied the case of interstitial helium diffusion in perfect MgO and found a migration barrier of 0.73 eV at zero pressure. Then we used the kinetic Monte Carlo method to study the case of substitutional He diffusion in MgO, where we assumed that He diffuses on the cation sublattice through cation vacancies. We also performed experiments on He diffusion at atmospheric pressure using ion implantation and nuclear reaction analysis in both as-received and Ga-doped samples. A comparison between the experimental and simulation results are shown. This work provides a foundation for further studies at high-pressure.

Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

PubMed Central

Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

2017-01-01

We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L−1. PMID:28102316

Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

NASA Astrophysics Data System (ADS)

Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

2017-01-01

We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L-1.

Formation mechanism, degradation behavior, and cytocompatibility of a nanorod-shaped HA and pore-sealed MgO bilayer coating on magnesium.

PubMed

Li, Bo; Han, Yong; Qi, Kai

2014-10-22

A novel bilayer coating (HT24h) was fabricated on magnesium using microarc oxidation (MAO) and hydrothermal treatment (HT). The coating comprises an outer layer of narrow interrod spaced hydroxyapatite (HA) nanorods and an inner layer of MgO containing Mg(OH)2/HA-sealing-pores. The hydrothermal formation mechanism of HA nanorods on MAO-formed MgO was explored. Also, evolution of structure and bonding integrity of HT24h coating with immersion in physiological saline (PS) for 0-90 days, corrosion resistance and cytocompatibility of the coating were investigated, together with MgO containing Mg(OH)2-sealing-pores (HT2h) and porous MgO (MAO) coatings. Corrosion resistance was identified by three-point bending and electrochemical tests in PS, while cytocompatibility was determined by MTT, live/dead staining, and vinculin-actin-nucleus tricolor staining assays of hFOB1.19 cells. Immersion tests indicate that cracking rather than delamination is a common feature in most areas of the coatings up to day 90 and degradation is the reason for thinning in thickness of the coatings. MAO and HT2h coatings exhibit a significant thinning due to fast degradation of MgO. However, HT24h coating shows a quite small thinning, owing to the fact that the HA nanorods underwent quite slow degradation while the underlying MgO only underwent conversion to Mg(OH)2 without dissolution of the Mg(OH)2. Scratch tests reveal that HT24h coating still retains relatively high bonding integrity, although the failure position changes from the MgO interior to a point between the HA and MgO layers after 90 days of immersion. HT24h coating appears far more effective than MAO and HT2h coatings in reducing degradation and maintaining the mechanical integrity of Mg, as well as enhancing the mitochondrial activity, adhesion, and proliferation of osteoblasts.

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

PubMed

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

2018-02-01

In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

Fewer Defects in the Surface Slows the Hydrolysis Rate, Decreases the ROS Generation Potential, and Improves the Non-ROS Antimicrobial Activity of MgO.

PubMed

Anicˇić, Nemanja; Vukomanović, Marija; Koklicˇ, Tilen; Suvorov, Danilo

2018-05-21

Magnesium oxide (MgO) is recognised as exhibiting a contact-based antibacterial activity. However, a comprehensive study of the impact of atomic-scale surface features on MgO's antibacterial activity is lacking. In this study, the nature and abundance of the native surface defects on different MgO powders are thoroughly investigated. Their impacts on the hydrolysis kinetics, antibacterial activity against Escherichia coli (ATCC 47076), Staphylococcus epidermidis and Pseudomonas aeruginosa and the reactive oxygen species (ROS) generation potential are determined and explained. It is shown that a reduction in the abundance of low-coordinated oxygen atoms on the surface of the MgO improves its resistance to both hydrolysis and antibacterial activity. The ROS generation potential, determined in-situ using a fluorescence microplate assay and electron paramagnetic resonance spectroscopy, is not an inherent property of the studied MgO, rather it is a side product of hydrolysis (only for the most highly defected MgO particles) and/or a consequence of the MgO/bacteria interaction. The evaluation of the mutual correlations of the hydrolysis, the antibacterial activity and the ROS generation, with their origin in the surface defects' peculiarities, led to the conclusion that the acid/base reaction between the MgO surface and the bacterial wall contributes considerably to the MgO's antibacterial activity. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetotransport Properties in High-Quality Ultrathin Two-Dimensional Superconducting Mo2C Crystals.

PubMed

Wang, Libin; Xu, Chuan; Liu, Zhibo; Chen, Long; Ma, Xiuliang; Cheng, Hui-Ming; Ren, Wencai; Kang, Ning

2016-04-26

Ultrathin transition metal carbides are a class of developing two-dimensional (2D) materials with superconductivity and show great potentials for electrical energy storage and other applications. Here, we report low-temperature magnetotransport measurements on high-quality ultrathin 2D superconducting α-Mo2C crystals synthesized by a chemical vapor deposition method. The magnetoresistance curves exhibit reproducible oscillations at low magnetic fields for temperature far below the superconducting transition temperature of the crystals. We interpret the oscillatory magnetoresistance as a consequence of screening currents circling around the boundary of triangle-shaped terraces found on the surface of ultrathin Mo2C crystals. As the sample thickness decreases, the Mo2C crystals exhibit negative magnetoresistance deep in the superconducting transition regime, which reveals strong phase fluctuations of the superconducting order parameters associated with the superconductor-insulator transition. Our results demonstrate that the ultrathin superconducting Mo2C crystals provide an interesting system for studying rich transport phenomena in a 2D crystalline superconductor with enhanced quantum fluctuations.

Gold atoms and clusters on MgO(100) films; an EPR and IRAS study

NASA Astrophysics Data System (ADS)

Yulikov, M.; Sterrer, M.; Risse, T.; Freund, H.-J.

2009-06-01

Single gold atoms deposited on single crystalline MgO(1 0 0) films grown on Mo(1 0 0) are characterized by electron paramagnetic resonance spectroscopy as well as IR spectroscopy using CO as probe molecules. In this article we describe the first angular dependent measurements to determine the principal hyperfine components of a secondary hyperfine interaction, namely, with 17O of the MgO. The values determined here are in perfect agreement with theoretical expectations and corroborate the previously reported binding mechanism of Au atoms on the oxygen anions of the MgO terrace. The temperature dependent EPR data reveal an onset of Au atom mobility at about 80 K while the formation of Au particles occurs only above 125 K. By an analysis of the EPR line width in combination with STM measurements it is possible to deduce an increase of the interatomic distance above 80 K. The Au/CO complexes show a somewhat smaller temperature stability as compared to the Au atoms. The observed thermal stability is in perfect agreement with theoretical predictions for CO desorption.

A broadband terahertz ultrathin multi-focus lens

PubMed Central

He, Jingwen; Ye, Jiasheng; Wang, Xinke; Kan, Qiang; Zhang, Yan

2016-01-01

Ultrathin transmission metasurface devices are designed on the basis of the Yang-Gu amplitude-phase retrieval algorithm for focusing the terahertz (THz) radiation into four or nine spots with focal spacing of 2 or 3 mm at a frequency of 0.8 THz. The focal properties are experimentally investigated in detail, and the results agree well with the theoretical expectations. The designed THz multi-focus lens (TMFL) demonstrates a good focusing function over a broad frequency range from 0.3 to 1.1 THz. As a transmission-type device based on metasurface, the diffraction efficiency of the TMFL can be as high as 33.92% at the designed frequency. The imaging function of the TMFL is also demonstrated experimentally and clear images are obtained. The proposed method produces an ultrathin, low-cost, and broadband multi-focus lens for THz-band application PMID:27346430

Behaviour of tunnel lining material in road tunnel fire

NASA Astrophysics Data System (ADS)

Tomar, M.; Khurana, S.; Singh, R.

2018-04-01

The worldwide road tunnel linings are protected against possible fire scenarios to safeguard the structure and assist in occupant evacuation. There are various choices of active and passive protection available, passive protections includes calcium silicate boards, polypropylene fibers, vermiculite cement based sprays, and other intumescent materials. Tunnel fire is a complex phenomenon and researchers in the past has highlighted that there are various factors which affect the tunnel fires. The effect of passive protection techniques on tunnel fire is not well understood, especially for the insulation boards. It’s been understood from past research that for a heavy good vehicular (HGV) fire in the tunnel, the heat feedback effect is significant. Insulation boards may also affect the tunnel fires by altering the heat feedback effect in vehicular tunnels and hence this can affect the overall heat release rates and temperature profile inside a tunnel. This study focuses on studying the role of insulation boards in tunnel fires and evaluating its effect on overall heat release rate and tunnel temperatures.

Exploratory development and services for preparing and examining ultrathin polished sections of lunar rocks and particulates, part 1

NASA Technical Reports Server (NTRS)

Beauchamp, R. H.; Williford, J. F.; Gafford, E. L.

1972-01-01

Development of improved procedures is reported for three classes of lunar materials: dense rocks, breccias, and particulates. High quality ultrathin sections of these materials are obtained. Lists of equipment and supplies, procedures, photomicrographic documentation, and training are provided. Advantages of ultrathin polished sections for conventional and unconventional optical microscopy methods are described. Recommendations are provided for use of ultrathin sections in lunar rock studies, for further refinement of ultrathinning procedures, and for additional training efforts to establish a capability at the Manned Space Center. For Part 2, See N72-50754.

The Evaluation of Damage Effects on MgO Added Concrete with Slag Cement Exposed to Calcium Chloride Deicing Salt.

PubMed

Jang, Jae-Kyeong; Kim, Hong-Gi; Kim, Jun-Hyeong; Ryou, Jae-Suk

2018-05-14

Concrete systems exposed to deicers are damaged in physical and chemical ways. In mitigating the damage from CaCl₂ deicers, the usage of ground slag cement and MgO are investigated. Ordinary Portland cement (OPC) and slag cement are used in different proportions as the binding material, and MgO in doses of 0%, 5%, 7%, and 10% are added to the systems. After 28 days of water-curing, the specimens are immersed in 30% CaCl₂ solution by mass for 180 days. Compressive strength test, carbonation test, chloride penetration test, chloride content test, XRD analysis, and SEM-EDAX analysis are conducted to evaluate the damage effects of the deicing solution. Up to 28 days, plain specimens with increasing MgO show a decrease in compressive strength, an increase in carbonation resistance, and a decrease in chloride penetration resistance, whereas the S30- and S50- specimens show a slight increase in compressive strength, an increase in carbonation resistance, and a slight increase in chloride penetration resistance. After 180 days of immersion in deicing solution, specimens with MgO retain their compressive strength longer and show improved durability. Furthermore, the addition of MgO to concrete systems with slag cement induces the formation of magnesium silicate hydrate (M-S-H) phases.

The Evaluation of Damage Effects on MgO Added Concrete with Slag Cement Exposed to Calcium Chloride Deicing Salt

PubMed Central

Jang, Jae-Kyeong; Kim, Hong-Gi; Kim, Jun-Hyeong

2018-01-01

Concrete systems exposed to deicers are damaged in physical and chemical ways. In mitigating the damage from CaCl2 deicers, the usage of ground slag cement and MgO are investigated. Ordinary Portland cement (OPC) and slag cement are used in different proportions as the binding material, and MgO in doses of 0%, 5%, 7%, and 10% are added to the systems. After 28 days of water-curing, the specimens are immersed in 30% CaCl2 solution by mass for 180 days. Compressive strength test, carbonation test, chloride penetration test, chloride content test, XRD analysis, and SEM-EDAX analysis are conducted to evaluate the damage effects of the deicing solution. Up to 28 days, plain specimens with increasing MgO show a decrease in compressive strength, an increase in carbonation resistance, and a decrease in chloride penetration resistance, whereas the S30- and S50- specimens show a slight increase in compressive strength, an increase in carbonation resistance, and a slight increase in chloride penetration resistance. After 180 days of immersion in deicing solution, specimens with MgO retain their compressive strength longer and show improved durability. Furthermore, the addition of MgO to concrete systems with slag cement induces the formation of magnesium silicate hydrate (M-S-H) phases. PMID:29758008

Crystallization Behavior of the CaO-Al2O3-MgO System Studied with a Confocal Laser Scanning Microscope

NASA Astrophysics Data System (ADS)

Jung, Sung Suk; Sohn, Il

2012-12-01

The crystallization behavior of a calcium-aluminate system with various MgO content from 2.5 to 7.5 wt pct and CaO/Al2O3 ratios between 0.8 and 1.2 has been examined using a confocal laser scanning microscope (CLSM). CCT (continuous cooling transformation) and time temperature transformation (TTT) diagrams were constructed to identify the primary crystal phase of slag at different compositions and at cooling rates between 25 and 800 K/minutes. In the slag at a CaO/Al2O3 ratio of 1.0, crystallization temperature increased during isothermal and continuous cooling with higher MgO content, and the shortest incubation time was observed at 5 wt pct MgO. When MgO content was fixed to be 5 wt pct, crystallization temperature increased with lower CaO/Al2O3 ratio. According to the slag composition, cooling rates and temperature, the primary phase could be CA, or C5A3, or C3A, or C3MA2, or MgO, and the crystal morphology changes from dendrites to faceted crystals to columnar crystals in this composition range.

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

NASA Astrophysics Data System (ADS)

Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

2018-01-01

The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

Neutron monochromators of BeO, MgO and ZnO single crystals

NASA Astrophysics Data System (ADS)

Adib, M.; Habib, N.; Bashter, I. I.; Morcos, H. N.; El-Mesiry, M. S.; Mansy, M. S.

2014-05-01

The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm.

Organic-inorganic interface-induced multi-fluorescence of MgO nanocrystal clusters and their applications in cellular imaging.

PubMed

Xie, Shuifen; Bao, Shixiong; Ouyang, Junjie; Zhou, Xi; Kuang, Qin; Xie, Zhaoxiong; Zheng, Lansun

2014-04-25

Surface functionalization of inorganic nanomaterials through chemical binding of organic ligands on the surface unsaturated atoms, forming unique organic-inorganic interfaces, is a powerful approach for creating special functions for inorganic nanomaterials. Herein, we report the synthesis of hierarchical MgO nanocrystal clusters (NCs) with an organic-inorganic interface induced multi-fluorescence and their application as new alternative labels for cellular imaging. The synthetic method was established by a dissolution and regrowth process with the assistance of carboxylic acid, in which the as-prepared MgO NCs were modified with carboxylic groups at the coordinatively unsaturated atoms of the surface. By introducing acetic acid to partially replace oleic acid in the reaction, the optical absorption of the produced MgO NCs was progressively engineered from the UV to the visible region. Importantly, with wider and continuous absorption profile, those MgO NCs presented bright and tunable multicolor emissions from blue-violet to green and yellow, with the highest absolute quantum yield up to (33±1) %. The overlap for the energy levels of the inorganic-organic interface and low-coordinated states stimulated a unique fluorescence resonance energy transfer phenomenon. Considering the potential application in cellular imaging, such multi-fluorescent MgO NCs were further encapsulated with a silica shell to improve the water solubility and stability. As expected, the as-formed MgO@SiO2 NCs possessed great biocompatibility and high performance in cellular imaging. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical spin injection from CoFe2O4 into p-Si semiconductor across MgO tunnel barrier for spin electronics

NASA Astrophysics Data System (ADS)

Panda, J.; Maji, Nilay; Nath, T. K.

2017-05-01

The room temperature spin injection and detection in non magnetic p-Si semiconductor have been studied in details in our CoFe2O4 (CFO)/MgO/p-Si heterojunction. The 3-terminal tunnel contacts have been made on the device for transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The spin accumulation in non magnetic p-Si semiconductor has been observed at different bias current under the applied magnetic field parallel to the film plane in the temperature range of 40-300 K. We have observed a giant spin accumulation in p-Si semiconductor using MgO/CFO tunnel contact. The Hanley effect is used to control the reduction of spin accumulation by applying magnetic field perpendicular to the carrier spin in the p-Si. The accumulated spin signal decays as a function of applied magnetic field for fixed bias current. These results will enable utilization of the spin degree of freedom in complementary Si devices and its further development.

The phase diagram and transport properties of MgO from theory and experiment

NASA Astrophysics Data System (ADS)

Shulenburger, Luke

2013-06-01

Planetary structure and the formation of terrestrial planets have received tremendous interest due to the discovery of so called super-earth exoplanets. MgO is a major constituent of Earth's mantle, the rocky cores of gas giants and is a likely component of the interiors of many of these exoplanets. The high pressure - high temperature behavior of MgO directly affects equation of state models for planetary structure and formation. In this work, we examine MgO under extreme conditions using experimental and theoretical methods to determine its phase diagram and transport properties. Using plate impact experiments on Sandia's Z facility the solid-solid phase transition from B1 to B2 is clearly determined. The melting transition, on the other hand, is subtle, involving little to no signal in us-up space. Theoretical work utilizing density functional theory (DFT) provides a complementary picture of the phase diagram. The solid-solid phase transition is identified through a series of quasi-harmonic phonon calculations and thermodynamic integration, while the melt boundary is found using phase coexistence calculations. One issue of particular import is the calculation of reflectivity along the Hugoniot and the influence of the ionic structure on the transport properties. Particular care is necessary because of the underestimation of the band gap and attendant overestimation of transport properties due to the use of semi-local density functional theory. We will explore the impact of this theoretical challenge and its potential solutions in this talk. The integrated use of DFT simulations and high-accuracy shock experiments together provide a comprehensive understanding of MgO under extreme conditions. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL85000.

A sextuple-band ultra-thin metamaterial absorber with perfect absorption

NASA Astrophysics Data System (ADS)

Yu, Dingwang; Liu, Peiguo; Dong, Yanfei; Zhou, Dongming; Zhou, Qihui

2017-08-01

This paper presents the design, simulation and measurement of a sextuple-band ultra-thin metamaterial absorber (MA). The unit cell of this proposed structure is composed of triangular spiral-shaped complementary structures imprinted on the dielectric substrate backed by a metal ground. The measured results are in good agreement with simulations with high absorptivities of more than 90% at all six absorption frequencies. In addition, this proposed absorber has good performances of ultra-thin, polarization insensitivity and a wide-angle oblique incidence, which can easily be used in many potential applications such as detection, imaging and sensing.

Chiral magnetic conductivity and surface states of Weyl semimetals in topological insulator ultra-thin film multilayer.

PubMed

Owerre, S A

2016-06-15

We investigate an ultra-thin film of topological insulator (TI) multilayer as a model for a three-dimensional (3D) Weyl semimetal. We introduce tunneling parameters t S, [Formula: see text], and t D, where the former two parameters couple layers of the same thin film at small and large momenta, and the latter parameter couples neighbouring thin film layers along the z-direction. The Chern number is computed in each topological phase of the system and we find that for [Formula: see text], the tunneling parameter [Formula: see text] changes from positive to negative as the system transits from Weyl semi-metallic phase to insulating phases. We further study the chiral magnetic effect (CME) of the system in the presence of a time dependent magnetic field. We compute the low-temperature dependence of the chiral magnetic conductivity and show that it captures three distinct phases of the system separated by plateaus. Furthermore, we propose and study a 3D lattice model of Porphyrin thin film, an organic material known to support topological Frenkel exciton edge states. We show that this model exhibits a 3D Weyl semi-metallic phase and also supports a 2D Weyl semi-metallic phase. We further show that this model recovers that of 3D Weyl semimetal in topological insulator thin film multilayer. Thus, paving the way for simulating a 3D Weyl semimetal in topological insulator thin film multilayer. We obtain the surface states (Fermi arcs) in the 3D model and the chiral edge states in the 2D model and analyze their topological properties.

Theoretical aspects of methyl acetate and methanol activation on MgO(100) and (501) catalyst surfaces with application in FAME production

NASA Astrophysics Data System (ADS)

Man, Isabela-Costinela; Soriga, Stefan Gabriel; Parvulescu, Vasile

2017-01-01

Density functional theory (DFT) calculations were carried out to study the activation of methyl acetate and methanol on MgO(100) and MgO(501) surfaces and integrated in the context of transesterification, interesterification and glycerolysis reactions used in biodiesel industry. First results indicate the importance of including of dispersion forces in the calculations. On MgO(100) the reverse reactions steps of Csbnd O and Csbnd H dissociations and on MgO(501) the same reverse reaction step of Csbnd H dissociations of methyl acetate are energetically favorable, while the dissociation of Csbnd O bond into methoxide and acetate fragments on the edge of MgO(501) was found to be exothermic with a low activation energy. For methanol, the dissociation of Osbnd H bond on MgO(100) surface in the presence of the second coadsorbed methanol molecule becomes more energetically favoured compared to the isolated molecule, due to the fact that the methoxide fragment is stabilized by intermolecular hydrogen bonding. This is reflected by the decrease of the activation energy of the forward reaction step and the increase of the activation energy of the backward reaction step, increasing the probability to have dissociated molecules among the undissociated ones. These results represent a step forward for better understanding from atomistic point of view the paths of these reactions on these surfaces for the corresponding catalytic processes.

Probing Dirac fermion dynamics in topological insulator Bi2Se3 films with a scanning tunneling microscope.

PubMed

Song, Can-Li; Wang, Lili; He, Ke; Ji, Shuai-Hua; Chen, Xi; Ma, Xu-Cun; Xue, Qi-Kun

2015-05-01

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi2Se3 ultrathin films. At the two-dimensional limit, bulk electrons become quantized and the quantization can be controlled by the film thickness at a single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of the phase relaxation length lϕ and inelastic scattering lifetime τ of topological surface-state electrons. We find that τ exhibits a remarkable (E - EF)(-2) energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Ion beam synthesis of Fe nanoparticles in MgO and yttria-stabilized zirconia

NASA Astrophysics Data System (ADS)

Potzger, K.; Reuther, H.; Zhou, Shengqiang; Mücklich, A.; Grötzschel, R.; Eichhorn, F.; Liedke, M. O.; Fassbender, J.; Lichte, H.; Lenk, A.

2006-04-01

To form embedded Fe nanoparticles, MgO(001) and YSZ(001) single crystals have been implanted at elevated temperatures with Fe ions at energies of 100 keV and 110 keV, respectively. The ion fluence was fixed at 6×1016 cm-2. As a result, γ- and α-phase Fe nanoparticles were synthesized inside MgO and YSZ, respectively. A synthesis efficiency of 100% has been achieved for implantation at 1273 K into YSZ. The ferromagnetic behavior of the α-Fe nanoparticles is reflected by a magnetic hyperfine field of 330 kOe and a hysteretic magnetization reversal. Electron holography showed a fringing magnetic field around some, but not all of the particles.

Laser cutting of ultra-thin glasses based on a nonlinear laser interaction effect

NASA Astrophysics Data System (ADS)

Chen, Jian; Wu, Zhouling

2013-07-01

Glass panel substrates have been widely used in consumer electronics such as in flat panel TVs, laptops, and cell phones. With the advancement in the industry, the glass substrates are becoming thinner and stronger for reduced weight and volume, which brings great challenges for traditional mechanical processes in terms of cut quality, yield, and throughput. Laser glass cutting provides a non-contact process with minimum impact and superior quality compared to the mechanical counterparts. In this paper, we presented recent progresses in advanced laser processing of ultra-thin glass substrates, especially laser-cutting of ultra-thin glasses by a high power laser through a nonlinear interaction effect. Our results indicate that this technique has great potential of application for mass production of ultra-thin glass substrates.

Ultrathin metallized PBI paper

NASA Technical Reports Server (NTRS)

Chenevey, E. C.

1978-01-01

A study to determine the feasibility of preparing ultrathin papers with a target weight of 3.5 g/m squared from polybenzimidazole (PBI) fibrids was undertaken. Small hand sheets of target weight were fabricated. They were light brown, low density materials with sufficient strength to be readily handleable. Characterization of these sheets included strength, fold endurance, thermal gravimetric analysis in air and nitrogen and photomicrographs. Two different batches of PBI fibrids were studied and differences in fabrication performance were noted. In neither case could target weight papers be prepared using conventional paper making techniques.

Spin-Torque Diode Effect in Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Suzuki, Yoshishige

2007-03-01

Spin-injection magnetization switching (SIMS) technique [1] made it possible to control magnetization by a direct current. A discovery of spontaneous rf oscillation from CPP-GMR nano-pillars and a real time observation of the switching process have revealed essential amplification function of a precession in the magnetic nano-pillars under a direct current [2]. Beside of those progresses, developments of giant tunneling magneto-resistive (GTMR) effect using an MgO barrier [3] made it possible to utilize a very large resistance change according to the magnetization switching. In this talk, several attempts to utilize interplay between spin-torque and giant-TMR effect will be presented referring to a ``spin-torque diode effect'' [4] and other properties such like rf noise control and possible signal amplification using magnetic tunnel junctions (MTJs). [1] J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996) , L. Berger, Phys. Rev. B 54, 9353 (1996), and E. B. Myers, et al., Science 285, 867 (1999). [2] S. I. Kiselev et al., Nature 425, 380 (2003), I. N. Krivorotov et al., Science, 307, 228 (2005). [3] W. Wulfhekel, et al. Appl. Phys. Lett. 78, 509--511 (2001), M. Bowen, et al. Appl. Phys. Lett. 79, 1655--1657 (2001), J. Faure-Vincent, et al. Appl. Phys. Lett. 82, 4507--4509 (2003), S. Yuasa, et al., Jpn. J. Appl. Phys. Part 2, 43, L588 (2004), S. Yuasa, et al., Nature Mat. 3, 868 (2004), S. S. P. Parkin et al., Nature Mat. 3, 862 (2004), and D. D. Djayaprawira et al., Appl. Phys. Lett. 86, 092502 (2005). [4] A. A. Tulapurkar, et al., Nature, 438, 339 (2005).

Ultrathin inorganic molecular nanowire based on polyoxometalates

PubMed Central

Zhang, Zhenxin; Murayama, Toru; Sadakane, Masahiro; Ariga, Hiroko; Yasuda, Nobuhiro; Sakaguchi, Norihito; Asakura, Kiyotaka; Ueda, Wataru

2015-01-01

The development of metal oxide-based molecular wires is important for fundamental research and potential practical applications. However, examples of these materials are rare. Here we report an all-inorganic transition metal oxide molecular wire prepared by disassembly of larger crystals. The wires are comprised of molybdenum(VI) with either tellurium(IV) or selenium(IV): {(NH4)2[XMo6O21]}n (X=tellurium(IV) or selenium(IV)). The ultrathin molecular nanowires with widths of 1.2 nm grow to micrometre-scale crystals and are characterized by single-crystal X-ray analysis, Rietveld analysis, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, thermal analysis and elemental analysis. The crystals can be disassembled into individual molecular wires through cation exchange and subsequent ultrasound treatment, as visualized by atomic force microscopy and transmission electron microscopy. The ultrathin molecular wire-based material exhibits high activity as an acid catalyst, and the band gap of the molecular wire-based crystal is tunable by heat treatment. PMID:26139011

Optical and thermodynamic properties of MgO from radiative shock temperature and sound speed measurements on samples preheated to 2300 K

NASA Astrophysics Data System (ADS)

Fatýanov, O. V.; Asimow, P. D.

2013-12-01

Thermodynamic properties of MgO, one of the major end-members of deep planetary interiors, play a significant role in the processes inside the Earth's lower mantle. Of particular importance in geophysics and geochemistry is the MgO melting behavior at high pressure. Despite considerable theoretical and experimental efforts over decades, it remains essentially unknown. The melting temperature predictions for MgO at 135 GPa, the Earth's core-mantle boundary pressure, range from 5 to 9 kK. In a continuous effort to resolve this inconsistency and to probe the P-T region previously unexplored, we developed a technique for radiative shock temperature measurements in single-crystal MgO preheated to 2300 K. Large ventilated Mo capsules were employed to hold ~20 mm long MgO crystals with controlled longitudinal thermal gradients. These hot targets were impacted by 0.8 mm thick Ta flyers launched at 6.5 to 7.5 km/s on the Caltech two-stage light-gas gun. Six spectral radiance histories from MgO shock front were recorded in every shot with 3 ns time resolution over 440-750 nm or 500-830 nm spectral range. The majority of our experiments showed smooth pressure dependence of MgO shock temperature and sound speed consistent with the solid phase at 197-243 GPa. Although most observed temperatures are ~700 K lower and sound speeds ~1 km/s higher than the model predictions, the pressure slopes for both parameters are in close agreement with those calculated for the solid phase. Unconfirmed data from a single experiment at 239 GPa and 8.3 kK showed correlated temperature and sound speed anomalies (both values lower than expected) that may be explained by partial melting. Our past and recent data on shock-compressed preheated MgO suggest its melting curve above 200 GPa is higher than the extrapolation of the experiments of Zerr & Boehler or the theoretical calculation by Strachan et. al. These results, features of shock experiments with 2300 K pre-heat temperatures, data analysis

Mechanism of Antiwear Property Under High Pressure of Synthetic Oil-Soluble Ultrathin MoS2 Sheets as Lubricant Additives.

PubMed

Chen, Zhe; Liu, Yuhong; Gunsel, Selda; Luo, Jianbin

2018-01-30

Wear occurs between two rubbing surfaces. Severe wear due to seizure under high pressure leads to catastrophic failures of mechanical systems and raises wide concerns. In this paper, a kind of synthetic oil-soluble ultrathin MoS 2 sheets is synthesized and investigated as lubricant additives between steel surfaces. It is found that, with the ultrathin MoS 2 sheets, the wear can be controlled under the nominal pressure of about 1 GPa, whereas the bearable nominal pressure for traditional lubricants is only a few hundred megapascals. It is found that when wear is under control, the real pressure between the asperities agrees with the breaking strength of ultrathin MoS 2 . Therefore, it is believed that, because of the good oil solubility and ultrasmall thickness, the ultrathin MoS 2 sheets can easily enter the contact area between the contacting asperities. Then, the localized seizure and further wear are prevented because there will be no metal-to-metal contact as long as the real pressure between the asperities is below the breaking strength of ultrathin MoS 2 . In this way, the upper limit pressure the lubricant can work is dependent on the mechanical properties of the containing ultrathin two-dimensional (2D) sheets. Additionally, ultrathin MoS 2 sheets with various lateral sizes are compared, and it is found that sheets with a larger size show better lubrication performance. This work discovers the lubrication mechanism of ultrathin MoS 2 sheets as lubricant additives and provides an inspiration to develop a novel generation of lubricant additives with high-strength ultrathin 2D materials.

Ultrathin nondoped emissive layers for efficient and simple monochrome and white organic light-emitting diodes.

PubMed

Zhao, Yongbiao; Chen, Jiangshan; Ma, Dongge

2013-02-01

In this paper, highly efficient and simple monochrome blue, green, orange, and red organic light emitting diodes (OLEDs) based on ultrathin nondoped emissive layers (EMLs) have been reported. The ultrathin nondoped EML was constructed by introducing a 0.1 nm thin layer of pure phosphorescent dyes between a hole transporting layer and an electron transporting layer. The maximum external quantum efficiencies (EQEs) reached 17.1%, 20.9%, 17.3%, and 19.2% for blue, green, orange, and red monochrome OLEDs, respectively, indicating the universality of the ultrathin nondoped EML for most phosphorescent dyes. On the basis of this, simple white OLED structures are also demonstrated. The demonstrated complementary blue/orange, three primary blue/green/red, and four color blue/green/orange/red white OLEDs show high efficiency and good white emission, indicating the advantage of ultrathin nondoped EMLs on constructing simple and efficient white OLEDs.

Ultrathin MoS2 Nanosheets with Superior Extreme Pressure Property as Boundary Lubricants.

PubMed

Chen, Zhe; Liu, Xiangwen; Liu, Yuhong; Gunsel, Selda; Luo, Jianbin

2015-08-07

In this paper, a new kind of oil-soluble ultrathin MoS2 nanosheets is prepared through a one-pot process. A superior extreme pressure property, which has not been attained with other nano-additives, is discovered when the nanosheets are used as lubricant additives. The as-synthesized MoS2 nanosheet is only a few atomic layers thick and tens of nanometers wide, and it is surface-modified with oleylamine so it can be well dispersed in oil or lubricant without adscititious dispersants or surfactants. By adding 1 wt% ultrathin MoS2 nanosheets, at the temperature of 120 °C, the highest load liquid paraffin can bear is tremendously improved from less than 50 N to more than 2000 N. Based on the tribological tests and analysis of the wear scar, a lubrication mechanism is proposed. It is believed that the good dispersion and the ultrathin shape of the nanosheets ensure that they can enter the contact area of the opposite sliding surfaces and act like a protective film to prevent direct contact and seizure between them. This work enriches the investigation of ultrathin MoS2 and has potential application in the mechanical industry.

Ultrathin MoS2 Nanosheets with Superior Extreme Pressure Property as Boundary Lubricants

NASA Astrophysics Data System (ADS)

Chen, Zhe; Liu, Xiangwen; Liu, Yuhong; Gunsel, Selda; Luo, Jianbin

2015-08-01

In this paper, a new kind of oil-soluble ultrathin MoS2 nanosheets is prepared through a one-pot process. A superior extreme pressure property, which has not been attained with other nano-additives, is discovered when the nanosheets are used as lubricant additives. The as-synthesized MoS2 nanosheet is only a few atomic layers thick and tens of nanometers wide, and it is surface-modified with oleylamine so it can be well dispersed in oil or lubricant without adscititious dispersants or surfactants. By adding 1 wt% ultrathin MoS2 nanosheets, at the temperature of 120 °C, the highest load liquid paraffin can bear is tremendously improved from less than 50 N to more than 2000 N. Based on the tribological tests and analysis of the wear scar, a lubrication mechanism is proposed. It is believed that the good dispersion and the ultrathin shape of the nanosheets ensure that they can enter the contact area of the opposite sliding surfaces and act like a protective film to prevent direct contact and seizure between them. This work enriches the investigation of ultrathin MoS2 and has potential application in the mechanical industry.

Engineering and characterizing nanoscale multilayered structures for magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Yang, J. Joshua

Magnetic tunnel junction (MTJ) has generated considerable attention due to its potential applications in improved magnetic sensors, read heads in HDDs and nonvolatile RAM. The materials issues play a crucial role in the performance of MTJs. In the work described in this thesis, we have engineered some interesting nanoscale multilayered structures mainly via thermodynamics considerations for MTJs. The insulator is usually an ultra-thin (<2nm) oxide, formed by oxidizing a pre-deposited metal, such as Al etc. We have developed novel fabrication approaches for obtaining clean and smooth interfaces between the insulator and the ferromagnets. These approaches include selectively oxidizing the pre-deposited tunnel barrier precursor metal, amorphizing the tunnel barrier precursor metal by alloying it with other elements, and in-situ annealing the bottom ferromagnetic layer. About 72% tunneling magnetoresistance (TMR) has been achieved at room temperature with AlOx and CoFe based MTJs. We have made a systemic study of the TMR vs. the Co1-xFe x electrode composition for AlOx based MTJs. A significant variation of TMR with Fe concentration has been observed. It is well known that the crystal structure of Co1-xFex changes from fcc to bcc with increasing Fe concentration. The concomitant composition change cast doubts on the role played by the crystal structure of the Co1-x Fex electrode on the TMR. By introducing different strains to an epitaxial Co1-xFex layer, we were able to fix its composition but alter its crystalline structure from fcc to bcc and found that the bcc structure resulted in much higher TMR values than found for the fcc structure. This is one of the few direct experimental confirmatory results showing the role of the FM electronic structure on the MTJ properties. Using Ag as a template, different 3d ferromagnets have been epitaxially grown on the Si substrate with hcp, fcc and bcc crystalline structures, respectively. By combining the selective oxidation

Physicochemical and adsorptive characteristics of activated carbons from waste polyester textiles utilizing MgO template method.

PubMed

Xu, Zhihua; Zhang, Daofang; Yuan, Zhihang; Chen, Weifang; Zhang, Tianqi; Tian, Danqi; Deng, Haixuan

2017-10-01

Activated carbons with high specific surface areas were produced, utilizing waste polyester textiles as carbon precursor by magnesium oxide (MgO) template method. Magnesium chloride (MgCl 2 ), magnesium citrate (MgCi), and MgO were employed as MgO precursors to prepare activated carbons (AC-MgCl 2 , AC-MgCi, and AC-MgO). Thermogravimetry-differential scanning calorimetry was conducted to investigate the pore-forming mechanism, and N 2 adsorption/desorption isotherms, XRD, SEM-EDS, TEM, FTIR and pH pzc were achieved to analyze physicochemical characteristics of the samples. The specific surface areas of AC-MgCl 2 (1173 m 2 /g) and AC-MgCi (1336 m 2 /g) were much higher than that of AC-MgO (450 m 2 /g), and the pores sizes of which were micro-mesoporous, mesoporous, and macropores, respectively, due to the formation of MgO crystal with different sizes. All activated carbons had abundant acidic oxygen groups. In addition, batch adsorption experiments were carried out to investigate the adsorptive characteristics of the prepared activated carbons toward Cr(VI). The adsorption kinetics fitted well with the pseudo-second order, and the adsorptive capacity of AC-MgCl 2 (42.55 mg/g) was higher than those of AC-MgCi (40.93 mg/g) and AC-MgO (35.87 mg/g).

Destructive adsorption of Diazinon pesticide by activated carbon nanofibers containing Al2O3 and MgO nanoparticles.

PubMed

Behnam, Roghaye; Morshed, Mohammad; Tavanai, Hossein; Ghiaci, Mehran

2013-10-01

We report the destructive adsorption of Diazinon pesticide by porous webs of activated carbon nanofibers containing Al2O3 and MgO nanoparticles. The results show that, the presence of Al2O3 and MgO nanoparticles in the activated carbon nanofibers increases the amount of destructively adsorbed Diazinon pesticide by activated carbon nanofibers. Moreover, type, amount, and specific surface area of metal oxide nanoparticles affect the adsorption rate as well as the total destructively adsorbed Diazinon. Liquid chromatography proved the degradation of Diazinon by chemical reaction with Al2O3 and MgO nanoparticles. Liquid chromatography-mass spectrometry showed that the main product of reaction between Diazinon and the metal oxides is 2-isopropyl-6-methyl-4-pyrimidinol with less toxicity than Diazinon.

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Khanfar, H. K.

2013-12-01

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current ( I)-voltage ( V), room-temperature differential resistance ( R)-voltage, and capacitance ( C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I- V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ˜1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R- V and C- V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.

Effect of hot extrusion, other constituents, and temperature on the strength and fracture of polycrystalline MgO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rice, R.W.

Improved agreement was confirmed between the Petch intercept and single-crystal yield stresses at 22 C. Hot-extruded MgO crystal specimens stressed parallel with the resultant axial texture (1) gave the highest and least-scattered strength-grain size results at 22 C, (2) showed direct fractographic evidence of microplastic initiated fracture at 22 C and showed macroscopic yield at 1,315 and especially 1,540 C, and (3) fractured entirely via transgranular cleavage, except for intergranular failure initiation from one or a few grain boundary surfaces exposed on the subsequent fracture surface, mainly at 1,540 C. Hot-extruded, hot-pressed MgO billets gave comparable strength when fracture initiatedmore » transgranularly, but lower strength when fracture initiated from one or especially a few grain boundary surfaces exposed on the fracture. The extent and frequency of such boundary fracture increased with test temperature. While oxide additions of [<=] 5% or impurities in hot-pressed or hot-extruded MgO can make limited strength increases at larger grain sizes, those having limited solubility can limit strength at finer grain sizes, as can coarser surface finish. Overall, MgO strength is seen as a balance between flaw and microplastic controlled failure, with several parameters shifting the balance.« less

Magnetic tunnel transistor with a perpendicular Co/Ni multilayer sputtered on a Si/Cu(1 0 0) Schottky diode

NASA Astrophysics Data System (ADS)

Vautrin, C.; Lu, Y.; Robert, S.; Sala, G.; Lenoble, O.; Petit-Watelot, S.; Devaux, X.; Montaigne, F.; Lacour, D.; Hehn, M.

2016-09-01

We have studied a magnetic tunnel transistor (MTT) structure based on a MgO tunnelling barrier emitter and a [Co/Ni]5/Cu multilayer base on a Si (0 0 1) substrate. Evident links between the Schottky barrier preparation techniques and the properties of perpendicular magnetic anisotropy (PMA) in the [Co/Ni] multilayer have been revealed by combined x-ray diffraction and magnetometry analyses. The Si surface treated by hydrofluoric acid (HF) is found to favour a Cu [1 0 0] texture growth which is detrimental to the [Co/Ni]5 PMA properties. However, a Ta layer insertion can restore the [1 1 1] texture required for the PMA appearance. By carefully engineering the base crystallographic texture structure, we obtain both a good quality of Schottky barrier and PMA property; a magneto-current ratio of 162% has been measured for MTTs with a spin-valve base composed of one magnetic layer having in-plane anisotropy and another one with out-of-plane anisotropy.

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

PubMed

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO

NASA Astrophysics Data System (ADS)

Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

2013-02-01

Virgin MgO single crystals were implanted with 70 keV C/N/O ions at room temperature to a dose of 2 × 1017/cm2. After implantation the samples showed room temperature hysteresis in magnetization loops. The annealing effects on the magnetic properties and induced defects of these samples were determined by vibrating sample magnetometer and positron annihilation spectroscopy, respectively. The experimental results indicate that ferromagnetism can be introduced to MgO single crystals by doping with C, N or introduction of Mg related vacancy defects. However, the Mg vacancies coexistence with C or N ions in the C-/N-implanted samples may play a negative role in magnetic performance in these MgO samples. The rapid increase of magnetic moment in O-implanted sample is attributed to the formation of new type of vacancy defects.

Instantons re-examined: dynamical tunneling and resonant tunneling.

PubMed

Le Deunff, Jérémy; Mouchet, Amaury

2010-04-01

Starting from trace formulas for the tunneling splittings (or decay rates) analytically continued in the complex time domain, we obtain explicit semiclassical expansions in terms of complex trajectories that are selected with appropriate complex-time paths. We show how this instantonlike approach, which takes advantage of an incomplete Wick rotation, accurately reproduces tunneling effects not only in the usual double-well potential but also in situations where a pure Wick rotation is insufficient, for instance dynamical tunneling or resonant tunneling. Even though only one-dimensional autonomous Hamiltonian systems are quantitatively studied, we discuss the relevance of our method for multidimensional and/or chaotic tunneling.

Synthesis of hexagonal ultrathin tungsten oxide nanowires with diameters below 5 nm for enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Lu, Huidan; Zhu, Qin; Zhang, Mengying; Yan, Yi; Liu, Yongping; Li, Ming; Yang, Zhishu; Geng, Peng

2018-04-01

Semiconductor with one dimension (1D) ultrathin nanostructure has been proved to be a promising nanomaterial in photocatalytic field. Great efforts were made on preparation of monoclinic ultrathin tungsten oxide nanowires. However, non-monoclinic phase tungsten oxides with 1D ultrathin structure, especially less than 5 nm width, have not been reported. Herein, we report the synthesis of hexagonal ultrathin tungsten oxide nanowires (U-WOx NW) by modified hydrothermal method. Microstructure characterization showed that U-WOx NW have the diameters of 1-3 nm below 5 nm and are hexagonal phase sub-stoichiometric WOx. U-WOx NW show absorption tail in the visible and near infrared region due to oxygen vacancies. For improving further photocatalytic performance, Ag co-catalyst was grown directly onto U-WOx NW surface by in situ redox reaction. Photocatalytic measurements revealed hexagonal U-WOx NW have better photodegradation activity, compared with commercial WO3(C-WO3) and oxidized U-WOx NW, ascribe to larger surface area, short diffusion length of photo-generated charge carriers and visible absorption of oxygen-vacancy-rich hexagonal ultrathin nanostructures. Moreover, the photocatalytic activity and stability of U-WOx NW using Ag co-catalyst were further improved.

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Martin, D.; Grandjean, N.

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device ismore » 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.« less

Probing the electronic and spintronic properties of buried interfaces by extremely low energy photoemission spectroscopy

PubMed Central

Fetzer, Roman; Stadtmüller, Benjamin; Ohdaira, Yusuke; Naganuma, Hiroshi; Oogane, Mikihiko; Ando, Yasuo; Taira, Tomoyuki; Uemura, Tetsuya; Yamamoto, Masafumi; Aeschlimann, Martin; Cinchetti, Mirko

2015-01-01

Ultraviolet photoemission spectroscopy (UPS) is a powerful tool to study the electronic spin and symmetry features at both surfaces and interfaces to ultrathin top layers. However, the very low mean free path of the photoelectrons usually prevents a direct access to the properties of buried interfaces. The latter are of particular interest since they crucially influence the performance of spintronic devices like magnetic tunnel junctions (MTJs). Here, we introduce spin-resolved extremely low energy photoemission spectroscopy (ELEPS) to provide a powerful way for overcoming this limitation. We apply ELEPS to the interface formed between the half-metallic Heusler compound Co2MnSi and the insulator MgO, prepared as in state-of-the-art Co2MnSi/MgO-based MTJs. The high accordance between the spintronic fingerprint of the free Co2MnSi surface and the Co2MnSi/MgO interface buried below up to 4 nm MgO provides clear evidence for the high interface sensitivity of ELEPS to buried interfaces. Although the absolute values of the interface spin polarization are well below 100%, the now accessible spin- and symmetry-resolved wave functions are in line with the predicted existence of non-collinear spin moments at the Co2MnSi/MgO interface, one of the mechanisms evoked to explain the controversially discussed performance loss of Heusler-based MTJs at room temperature. PMID:25702631

Reaction of water with MgO(100) surfaces: Part III. X-ray standing wave studies

NASA Astrophysics Data System (ADS)

Liu, P.; Kendelewicz, T.; Nelson, E. J.; Brown, G. E.

1998-09-01

Clean MgO(100) surfaces cleaved in vacuum and exposed to water vapor or bulk water were studied using the X-ray standing wave (XSW) technique in back reflection mode and surface sensitive, element specific O KLL and Mg KLL Auger electron yield detection. The effects of surface charging were mitigated, but not entirely eliminated, by using a low-energy electron flood gun. Simulation of the XSW signal showed that the effect of surface charging on the XSW data could be minimized with careful experimental design. We demonstrate that the XSW method can be applied to studies of insulating surfaces, and our results for MgO(100) surfaces exposed to water vapor or bulk water indicate the following: (1) the vacuum-cleaved clean surface undergoes no surface reconstruction or significant relaxation perpendicular to the surface; (2) Mg-OH distances on surfaces exposed to water vapor or bulk water measured perpendicular to the (100) surface are the same as in bulk MgO; and (3) the z-position of the surface Mg atoms does not change within the estimated error [±2% of the (200) spacing] after the surface is fully hydroxylated. Our results for the clean, vacuum-cleaved surface disagree with results from impact collision ion-scattering spectroscopy and surface-extended electron-loss fine structure for MgO(100), which indicate 15 and 17% inward relaxation, respectively, and they support results from low-energy electron diffraction, reflection high-energy electron diffraction, and photoelectron diffraction that show little, if any, relaxation or rumpling of the surface.

Experimental and Statistical Analysis of MgO Nanofluids for Thermal Enhancement in a Novel Flat Plate Heat Pipes

NASA Astrophysics Data System (ADS)

Pandiaraj, P.; Gnanavelbabu, A.; Saravanan, P.

Metallic fluids like CuO, Al2O3, ZnO, SiO2 and TiO2 nanofluids were widely used for the development of working fluids in flat plate heat pipes except magnesium oxide (MgO). So, we initiate our idea to use MgO nanofluids in flat plate heat pipe as a working fluid material. MgO nanopowders were synthesized by wet chemical method. Solid state characterizations of synthesized nanopowders were carried out by Ultraviolet Spectroscopy (UV), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD) techniques. Synthesized nanopowders were prepared as nanofluids by adding water and as well as water/ethylene glycol as a binary mixture. Thermal conductivity measurements of prepared nanofluids were studied using transient hot-wire apparatus. Response surface methodology based on the Box-Behnken design was implemented to investigate the influence of temperature (30-60∘C), particle fraction (1.5-4.5 vol.%), and solution pH (4-12) of nanofluids as the independent variables. A total of 17 experiments were accomplished for the construction of second-order polynomial equations for target output. All the influential factors, their mutual effects and their quadratic terms were statistically validated by analysis of variance (ANOVA). The optimum stability and thermal conductivity of MgO nanofluids with various temperature, volume fraction and solution pH were predicted and compared with experimental results. The results revealed that increase in particle fraction and pH of MgO nanofluids at certain points would increase thermal conductivity and become stable at nominal temperature.

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

NASA Astrophysics Data System (ADS)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Ultrathin Coating of Confined Pt Nanocatalysts by Atomic Layer Deposition for Enhanced Catalytic Performance in Hydrogenation Reactions.

PubMed

Wang, Meihua; Gao, Zhe; Zhang, Bin; Yang, Huimin; Qiao, Yan; Chen, Shuai; Ge, Huibin; Zhang, Jiankang; Qin, Yong

2016-06-13

Metal-support interfaces play a prominent role in heterogeneous catalysis. However, tailoring the metal-support interfaces to realize full utilization remains a major challenge. In this work, we propose a graceful strategy to maximize the metal-oxide interfaces by coating confined nanoparticles with an ultrathin oxide layer. This is achieved by sequential deposition of ultrathin Al2 O3 coats, Pt, and a thick Al2 O3 layer on carbon nanocoils templates by atomic layer deposition (ALD), followed by removal of the templates. Compared with the Pt catalysts confined in Al2 O3 nanotubes without the ultrathin coats, the ultrathin coated samples have larger Pt-Al2 O3 interfaces. The maximized interfaces significantly improve the activity and the protecting Al2 O3 nanotubes retain the stability for hydrogenation reactions of 4-nitrophenol. We believe that applying ALD ultrathin coats on confined catalysts is a promising way to achieve enhanced performance for other catalysts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thickness Dependence of the Dzyaloshinskii-Moriya Interaction in Co2 FeAl Ultrathin Films: Effects of Annealing Temperature and Heavy-Metal Material

NASA Astrophysics Data System (ADS)

Belmeguenai, M.; Roussigné, Y.; Bouloussa, H.; Chérif, S. M.; Stashkevich, A.; Nasui, M.; Gabor, M. S.; Mora-Hernández, A.; Nicholson, B.; Inyang, O.-O.; Hindmarch, A. T.; Bouchenoire, L.

2018-04-01

The interfacial Dzyaloshinskii-Moriya interaction (IDMI) is investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm ≤tCFA≤2 nm ) grown by sputtering on Si substrates, using Pt, W, Ir, and MgO buffer or/and capping layers. Vibrating sample magnetometry reveals that the magnetization at saturation (Ms ) for the Pt- and Ir-buffered films is higher than the usual Ms of CFA due to the proximity-induced magnetization (PIM) in Ir and Pt estimated to be 19% and 27%, respectively. The presence of PIM in these materials is confirmed using x-ray resonant magnetic reflectivity. Moreover, while no PIM is induced in W, higher PIM is obtained with Pt when it is used as a buffer layer rather than a capping layer. Brillouin light scattering in the Damon-Eshbach geometry is used to investigate the thickness dependences of the IDMI constants from the spin-wave nonreciprocity and the perpendicular anisotropy field versus the annealing temperature. The IDMI sign is found to be negative for Pt /CFA and Ir /CFA , while it is positive for W /CFA . The thickness dependence of the effective IDMI constant for stacks involving Pt and W shows the existence of two regimes similar to that of the perpendicular anisotropy constant due to the degradation of the interfaces as the CFA thickness approaches a critical thickness. The surface IDMI and anisotropy constants of each stack are determined for the thickest samples where a linear thickness dependence of the effective IDMI constant and the effective magnetization are observed. The interface anisotropy and IDMI constants investigated for the Pt /CFA /MgO system show different trends with the annealing temperature. The decrease of the IDMI constant with increasing annealing temperature is probably due to the electronic structure changes at the interfaces, while the increase of the interface anisotropy constant is coherent with the interface quality and disorder enhancement.

Real-Time Deposition Monitor for Ultrathin Conductive Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline

2011-01-01

A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grezes, C.; Alzate, J. G.; Cai, X.

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memorymore » and logic integrated circuits.« less

First principles study of iron-bearing MgO under ultrahigh pressure

NASA Astrophysics Data System (ADS)

Umemoto, K.; Hsu, H.

2017-12-01

Understanding of minerals under ultrahigh pressure is essential to model interiors of super-Earths. Chemical compositions of the super-Earths are expected to be similar to those of the Earth. Computational studies on Mg-Si-O ternary systems under ultrahigh pressures, which are difficult to be achieved by diamond-anvil-cell experiments, have been intensively performed (e.g., [1] for MgO, [2,3] for SiO2, and [4,5] for MgSiO3). However, as far as we know, these studies have been restricted to pure Mg-Si-O systems. In the mantles of super-Earths, we expect that there should be impurities as in the Earth's mantle. Among candidates of impurities, iron is especially important to model interiors of super-Earths. Here, we investigate iron-bearing MgO under ultrahigh pressures by first principles. We clarify effects of iron on the phase transition of MgO and thermodynamic quantities by first principles. The role of the 3d electrons will be elucidated. [1] Z. Wu, R. M. Wentzcovitch, K. Umemoto, B. Li, K. Hirose, and J. C. Zheng, J. Geophys. Res. 113, B06204 (2008). [2] S. Q. Wu, K. Umemoto, M. Ji, C. Z. Wang, K. M. Ho, and R. M. Wentzcovitch, Phys. Rev. B 83, 184102 (2011). [3] T. Tsuchiya and J. Tsuchiya, Proc. Nat. Acad. Sci. 108, 1252 (2011) [4] S. Q. Wu, M. Ji, C. Z. Wang, M. C. Nguye, X. Zhao, K. Umemoto, R. M. Wentzcovitch, and K. M. Ho, J. Phys.: Condens. Matter 26, 035402 (2014). [5] H. Niu, A. R. Oganov, X.-C. Chen, and D. Li, Sci. Rep. 5, 18347 (2015).

Design of Ultrathin Pt-Based Multimetallic Nanostructures for Efficient Oxygen Reduction Electrocatalysis.

PubMed

Lai, Jianping; Guo, Shaojun

2017-12-01

Nanocatalysts with high platinum (Pt) utilization efficiency are attracting extensive attention for oxygen reduction reactions (ORR) conducted at the cathode of fuel cells. Ultrathin Pt-based multimetallic nanostructures show obvious advantages in accelerating the sluggish cathodic ORR due to their ultrahigh Pt utilization efficiency. A focus on recent important developments is provided in using wet chemistry techniques for making/tuning the multimetallic nanostructures with high Pt utilization efficiency for boosting ORR activity and durability. First, new synthetic methods for multimetallic core/shell nanoparticles with ultrathin shell sizes for achieving highly efficient ORR catalysts are reviewed. To obtain better ORR activity and stability, multimetallic nanowires or nanosheets with well-defined structure and surface are further highlighted. Furthermore, ultrathin Pt-based multimetallic nanoframes that feature 3D molecularly accessible surfaces for achieving more efficient ORR catalysis are discussed. Finally, the remaining challenges and outlooks for the future will be provided for this promising research field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectric properties of an ultra-thin topological insulator.

PubMed

Islam, S K Firoz; Ghosh, T K

2014-04-23

Thermoelectric coefficients of an ultra-thin topological insulator are presented here. The hybridization between top and bottom surface states of a topological insulator plays a significant role. In the absence of a magnetic field, the thermopower increases and thermal conductivity decreases with an increase in the hybridization energy. In the presence of a magnetic field perpendicular to the ultra-thin topological insulator, thermoelectric coefficients exhibit quantum oscillations with inverse magnetic field, whose frequency is strongly modified by the Zeeman energy and whose phase factor is governed by the product of the Landé g-factor and the hybridization energy. In addition to the numerical results, the low-temperature approximate analytical results for the thermoelectric coefficients are also provided. It is also observed that for a given magnetic field these transport coefficients oscillate with hybridization energy, at a frequency that depends on the Landé g-factor.

Terahertz Mixing Characteristics of NbN Superconducting Tunnel Junctions and Related Astronomical Observations

NASA Astrophysics Data System (ADS)

Li, J.

2010-01-01

High-sensitivity superconducting SIS (superconductor-insulator-superconductor) mixers are playing an increasingly important role in the terahertz (THz) astronomical observation, which is an emerging research frontier in modern astrophysics. Superconducting SIS mixers with niobium (Nb) tunnel junctions have reached a sensitivity close to the quantum limit, but have a frequency limit about 0.7 THz (i.e., gap frequency of Nb tunnel junctions). Beyond this frequency Nb superconducting films will absorb energetic photons (i.e., energy loss) to break Cooper pairs, thereby resulting in significant degradation of the mixer performance. Therefore, it is of particular interest to develop THz superconducting SIS mixers incorporating tunnel junctions with a larger energy gap. Niobium-nitride (NbN) superconducting tunnel junctions have been long known for their large energy gap, almost double that of Nb ones. With the introduction of epitaxially grown NbN films, the fabrication technology of NbN superconducting tunnel junctions has been considerably improved in the recent years. Nevertheless, their performances are still not as good as Nb ones, and furthermore they are not yet demonstrated in real astronomical applications. Given the facts mentioned above, in this paper we systematically study the quantum mixing behaviors of NbN superconducting tunnel junctions in the THz regime and demonstrate an astronomical testing observation with a 0.5 THz superconducting SIS mixer developed with NbN tunnel junctions. The main results of this study include: (1) successful design and fabrication of a 0.4˜0.6 THz waveguide mixing circuit with the high-dielectric-constant MgO substrate; (2) successful fabrication of NbN superconducting tunnel junctions with the gap voltage reaching 5.6 mV and the quality factor as high as 15; (3) demonstration of a 0.5 THz waveguide NbN superconducting SIS mixer with a measured receiver noise temperature (no correction) as low as five times the quantum limit

Ultrathin MoS2 Nanosheets with Superior Extreme Pressure Property as Boundary Lubricants

PubMed Central

Chen, Zhe; Liu, Xiangwen; Liu, Yuhong; Gunsel, Selda; Luo, Jianbin

2015-01-01

In this paper, a new kind of oil-soluble ultrathin MoS2 nanosheets is prepared through a one-pot process. A superior extreme pressure property, which has not been attained with other nano-additives, is discovered when the nanosheets are used as lubricant additives. The as-synthesized MoS2 nanosheet is only a few atomic layers thick and tens of nanometers wide, and it is surface-modified with oleylamine so it can be well dispersed in oil or lubricant without adscititious dispersants or surfactants. By adding 1 wt% ultrathin MoS2 nanosheets, at the temperature of 120 °C, the highest load liquid paraffin can bear is tremendously improved from less than 50 N to more than 2000 N. Based on the tribological tests and analysis of the wear scar, a lubrication mechanism is proposed. It is believed that the good dispersion and the ultrathin shape of the nanosheets ensure that they can enter the contact area of the opposite sliding surfaces and act like a protective film to prevent direct contact and seizure between them. This work enriches the investigation of ultrathin MoS2 and has potential application in the mechanical industry. PMID:26249536

Static and dynamic properties of Co2FeAl thin films: Effect of MgO and Ta as capping layers

NASA Astrophysics Data System (ADS)

Husain, Sajid; Barwal, Vineet; Kumar, Ankit; Behera, Nilamani; Akansel, Serkan; Goyat, Ekta; Svedlindh, Peter; Chaudhary, Sujeet

2017-05-01

The influence of MgO and Ta capping layers on the static and dynamic magnetic properties of Co2FeAl (CFA) Heusler alloy thin films has been investigated. It is observed that the CFA film deposited with MgO capping layer is preeminent compared to the uncapped or Ta capped CFA film. In particular, the magnetic inhomogeneity contribution to the ferromagnetic resonance line broadening and damping constant are found to be minimal for the MgO capped CFA thin film i.e., 0.12±0.01 Oe and 0.0074±0.00014, respectively. The saturation magnetization was found to be 960±25emu/cc.

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Ultra-thin, light-trapping silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

1989-01-01

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Molecular Imaging of Ultrathin Pentacene Films: Evidence for Homoepitaxy

NASA Astrophysics Data System (ADS)

Wu, Yanfei; Haugstad, Greg; Frisbie, C. Daniel

2013-03-01

Ultrathin polycrystalline films of organic semiconductors have received intensive investigations due to the critical role they play in governing the performance of organic thin film transistors. In this work, a variety of scanning probe microscopy (SPM) techniques have been employed to investigate ultrathin polycrystalline films (1-3 nm) of the benchmark organic semiconductor pentacene. By using spatially resolved Friction Force Microscopy (FFM), Kelvin Probe Force Microscopy (KFM) and Electrostatic Force Microscopy (EFM), an interesting multi-domain structure is revealed within the second layer of the films, characterized as two distinct friction and surface potential domains correlating with each other. The existence of multiple homoepitaxial modes within the films is thus proposed and examined. By employing lattice-revolved imaging using contact mode SPM, direct molecular evidence for the unusual homoepitaxy is obtained.

Search for O[-1] earthquake-like precursors: a ME μSR MgO study

NASA Astrophysics Data System (ADS)

Boekema, C.; Cabot, A.; Lee, A.-L.; Lin, I.; Colebaugh, A.; Freund, Ft

We study O-1 earthquake-like precursor effects by analyzing Muon-Spin-Resonance (μSR) MgO data using Maximum Entropy (ME). Due to its presence in the Earth's crust, MgO is ideal to study these features. O-1 formation results from a 2-stage break-up in an O anion pair at high-temperature or high-pressure conditions. As T increases above room temperature, a small % of oxygen is predicted to produce an O-1 state. ME analysis of 100-Oe μSR data of a pure 3N-MgO single crystal produces a broad Gaussian at 1.36 MHz and a sharp Lorentzian at 1.4 MHz. The latter could be effects of extended O-1 states, as positive muons probe near O ions. There is no sharp 1.4-MHz signal observed in the μSR data of insulators Al2O3 and PrBCO6 data, only the expected 100-Oe Gaussian. We have fitted ME μSR transforms of MgO to obtain an empirical description of 1.36- and 1.4- MHz peaks. Their T dependences above room temperature appear to be positive-hole effects. Relations to precursor earthquake-like O-valency effects are discussed. Research supported by ISIS-UK, LANL-DOE, SETI-NASA, SJSU & AFC.

The Design of Wind Tunnels and Wind Tunnel Propellers

NASA Technical Reports Server (NTRS)

Warner, Edward P; Norton, F H; Hebbert, C M

1919-01-01

Report discusses the theory of energy losses in wind tunnels, the application of the Drzewiecki theory of propeller design to wind tunnel propellers, and the efficiency and steadiness of flow in model tunnels of various types.

Enhancements of magnetic properties and planar magnetoresistance by electric fields in γ-Fe{sub 2}O{sub 3}/MgO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Bin; Qin, Hongwei; Pei, Jinliang

2016-05-23

The treatment of perpendicular electric field upon γ-Fe{sub 2}O{sub 3}/MgO film at room temperature could adjust the magnetic properties (saturation magnetization, magnetic remanence, coercivity, and saturation magnetizing field) of the film. The enhancement of saturation magnetization after the treatment of electric field may be connected with the combined shift effects of Mg ions from MgO to γ-Fe{sub 2}O{sub 3} and O{sup 2−} ions from γ-Fe{sub 2}O{sub 3} to MgO. The negative magnetoresistance of the γ-Fe{sub 2}O{sub 3}/MgO film also enhances with the treatment of perpendicular electric field at room temperature, possibly due to the increasing of electron hopping rate betweenmore » Fe{sup 2+} and Fe{sup 3+}.« less

Effect of the MgO on microstructure and optical properties of TAG (Tb3Al5O12) transparent ceramics using hot isostatic pressing

NASA Astrophysics Data System (ADS)

Zhang, Shouyi; Liu, Peng; Xu, Xiaodong; Zhang, Jian

2018-06-01

In this work, the TAG transparent ceramics doped with 0.4 wt.% TEOS and different concentration of MgO were fabricated by a reactive sintering process under vacuum sintering combined with hot isostatic pressing (HIP) treatment. The effect of MgO on the microstructure evolution and optical properties of delivered ceramics were investigated. The results showed that the TAG ceramics doped with 0.4 wt.% TEOS and 0.1 wt.% MgO exhibited the optimum optical transmittance, which can reach about 81% in the visible and near-infrared (NIR) regions. The addition of MgO inhibited the grain growth and accelerated the densification of TAG ceramic at the sintering temperature reached about 1600 °C.

MgO melting curve constraints from shock temperature and rarefaction overtake measurements in samples preheated to 2300 K

NASA Astrophysics Data System (ADS)

Fat'yanov, O. V.; Asimow, P. D.

2014-05-01

Continuing our effort to obtain experimental constraints on the melting curve of MgO at 100-200 GPa, we extended our target preheating capability to 2300 K. Our new Mo capsule design holds a long MgO crystal in a controlled thermal gradient until impact by a Ta flyer launched at up to 7.5 km/s on the Caltech two-stage light-gas gun. Radiative shock temperatures and rarefaction overtake times were measured simultaneously by a 6-channel VIS/NIR pyrometer with 3 ns time resolution. The majority of our experiments showed smooth monotonic increases in MgO sound speed and shock temperature with pressure from 197 to 243 GPa. The measured temperatures as well as the slopes of the pressure dependences for both temperature and sound speed were in good agreement with those calculated numerically for the solid phase at our peak shock compression conditions. Most observed sound speeds, however, were ~800 m/s higher than those predicted by the model. A single unconfirmed data point at 239 GPa showed anomalously low temperature and sound speed, which could both be explained by partial melting in this experiment and could suggest that the Hugoniot of MgO preheated to 2300 K crosses its melting line just slightly above 240 GPa.

Optical Properties of Nanocrystal Interfaces in Compressed MgO Nanopowders

PubMed Central

2011-01-01

The optical properties and charge trapping phenomena observed on oxide nanocrystal ensembles can be strongly influenced by the presence of nanocrystal interfaces. MgO powders represent a convenient system to study these effects due to the well-defined shape and controllable size distributions of MgO nanocrystals. The spectroscopic properties of nanocrystal interfaces are investigated by monitoring the dependence of absorption characteristics on the concentration of the interfaces in the nanopowders. The presence of interfaces is found to affect the absorption spectra of nanopowders more significantly than changing the size of the constituent nanocrystals and, thus, leading to the variation of the relative abundance of light-absorbing surface structures. We find a strong absorption band in the 4.0−5.5 eV energy range, which was previously attributed to surface features of individual nanocrystals, such as corners and edges. These findings are supported by complementary first-principles calculations. The possibility to directly address such interfaces by tuning the energy of excitation may provide new means for functionalization and chemical activation of nanostructures and can help improve performance and reliability for many nanopowder applications. PMID:21443262

The influence of incorporating MgO into Ni-based cermets by plasma spraying on anode microstructural and chemical stability in dry methane

NASA Astrophysics Data System (ADS)

Lay, E.; Metcalfe, C.; Kesler, O.

2012-11-01

The Solution Precursor Plasma Spray (SPPS) process was successfully used to deposit cermet coatings that exhibit fine microstructures with high surface area. MgO addition in Ni-YSZ and Ni-SDC cermets results in (Ni,Mg)O solid solution formation, and nickel particles after reduction are finer than in coatings without magnesia. The influence of MgO on the chemical stability of cermets in anodic operating conditions is discussed. It was found that a sufficient amount of magnesia addition (Ni0.9(MgO)0.1) helps to reduce carbon deposition in dry methane.

Effect of annealing on microstructure evolution in CoFeB/MgO/CoFeB heterostructures by positron annihilation

NASA Astrophysics Data System (ADS)

Zhao, Chong-Jun; Lu, Xiang-An; Zhao, Zhi-Duo; Li, Ming-Hua; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Zhang, Jing-Yan; Yu, Guang-Hua

2013-09-01

As one of the most powerful tools for investigation of defects of materials, positron annihilation spectroscopy was employed to explore the thermal effects on the film microstructure evolution in CoFeB/MgO/CoFeB heterostructures. It is found that high annealing temperature can drive vacancy defects agglomeration and ordering acceleration in the MgO barrier. Meanwhile, another important type of defects, vacancy clusters, which are formed via the agglomeration of vacancy defects in the MgO barrier after annealing, still exists inside the MgO barrier. All these behaviors in the MgO barrier could potentially impact the overall performance in MgO based magnetic tunnel junctions.

Comparison of dye doping and ultrathin emissive layer in white organic light-emitting devices with dual emissive layers

NASA Astrophysics Data System (ADS)

Wang, Xu; Qi, Yige; Yu, Junsheng

2014-09-01

White organic light-emitting devices (WOLEDs) with combined doping emissive layer (EML) and ultrathin EML have been fabricated to investigate the effect of each EML on the electroluminescent (EL) performance of the WOLEDs. Through tailoring doping concentration of bis[(4,6-difluorophenyl)-pyridinato-N,C2'](picolinate) iridium(III) (FIrpic) and thickness of ultrathin bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2'] iridium (acetylacetonate) [(tbt)2Ir(acac)] EML, it is found that the change in the doping ratio of FIrpic significantly influenced the EL efficiencies and spectra, while the alteration of ultrathin EML thickness had much milder effect on the EL performance. The results indicated that ultrathin EML is in favor of reproducibility in mass production compared with doping method.

Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Wonjong; Cho, Gu Young; Noh, Seungtak

2015-01-15

An ultrathin yttria-stabilized zirconia (YSZ) blocking layer deposited by atomic layer deposition (ALD) was utilized for improving the performance and reliability of low-temperature solid oxide fuel cells (SOFCs) supported by an anodic aluminum oxide substrate. Physical vapor-deposited YSZ and gadolinia-doped ceria (GDC) electrolyte layers were deposited by a sputtering method. The ultrathin ALD YSZ blocking layer was inserted between the YSZ and GDC sputtered layers. To investigate the effects of an inserted ultrathin ALD blocking layer, SOFCs with and without an ultrathin ALD blocking layer were electrochemically characterized. The open circuit voltage (1.14 V) of the ALD blocking-layered SOFC was visiblymore » higher than that (1.05 V) of the other cell. Furthermore, the ALD blocking layer augmented the power density and improved the reproducibility.« less

In Vitro Cytotoxic Evaluation of MgO Nanoparticles and Their Effect on the Expression of ROS Genes

PubMed Central

Kumaran, Rangarajulu Senthil; Choi, Yong-Keun; Singh, Vijay; Song, Hak-Jin; Song, Kyung-Guen; Kim, Kwang Jin; Kim, Hyung Joo

2015-01-01

Water-dispersible MgO nanoparticles were tested to investigate their cytotoxic effects on oxidative stress gene expression. In this in vitro study, genes related to reactive oxygen species (ROS), glutathione S-transferase (GST) and catalase, were quantified using real-time polymerase chain reactions (molecular level) and molecular beacon technologies (cellular level). The monodispersed MgO nanoparticles, 20 nm in size, were used to treat human cancer cell lines (liver cancer epithelial cells) at different concentrations (25, 75 and 150 µg/mL) and incubation times (24, 48 and 72 h). Both the genetic and cellular cytotoxic screening methods produced consistent results, showing that GST and catalase ROS gene expression was maximized at 150 µg/mL nanoparticle treatment with 48 h incubation. However, the genotoxic effect of MgO nanoparticles was not significant compared with control experiments, which indicates its significant potential applications in nanomedicine as a diagnostic and therapeutic tool. PMID:25854426

Electron Microscopy of Ultrathin Sections of Sporosarcina ureae

PubMed Central

Mazanec, K.; Kocur, M.; Martinec, T.

1965-01-01

Mazanec, K. (J. E. Purkyně University, Brno, Czechoslovakia), M. Kocur, and T. Martinec. Electron microscopy of ultrathin sections of Sporosarcina ureae. J. Bacteriol. 90:808–816. 1965.—Ultrathin sections of Sporosarcina ureae cells were studied by means of electron microscopy. The cell wall consists of several layers and is 340 A thick. The cytoplasm is of globular structure and includes ribosomelike structures, occasional mesosomes, and inclusions not precisely identifiable. The nuclear area has various shapes and is formed by filaments 10 to 20 A thick which proceed in various directions. Cell division occurs similarly to that of sarcinate. Both synchronic and asynchronic cell division was observed. The spores of S. ureae consist of an outer coat having several layers, a cortex, a spore wall, and cytoplasm. The results of the present investigation substantiate our previous suggestion that S. ureae should be transferred from the family Micrococcaceae to the family Bacillaceae. Images PMID:16562085

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

PubMed

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.

PubMed

Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen

2017-11-28

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

Positronium hydride in hydrogen-laden thermochemically reduced MgO single crystals

NASA Astrophysics Data System (ADS)

Pareja, R.; de La Cruz, R. M.; Pedrosa, M. A.; González, R.; Chen, Y.

1990-04-01

Thermochemical reduction of hydrogen-laden MgO single crystals at T~2400 K results in a large concentration of both hydride (H-) ions and anion vacancies (>1024 m-3). Positron-lifetime experiments of these crystals provide evidence for bound positronium hydride states also referred to as [e+-H-] or PsH states. The presence of the anion vacancies was found to inhibit the formation of these states. After thermally annealing out these vacancies, such that H- concentration remains intact, two long-lived components appear in the lifetime spectrum. Furthermore, these two components correlate with the presence of the H-ions. These results suggest the existence of bound [e+-H-] states when positrons are trapped by the H- ions, and the subsequent formation of positronium (Ps) states by the dissociation of the [e+-H-] states. From the values of the intermediate lifetime component, a value of (570+/-50) ps is obtained for the lifetime of the PsH state located in an anion vacancy in MgO. The longest lifetime component ~(1-3) ns is attributed to pick-off annihilation of ortho-Ps states.

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

A comparison study of Co and Cu doped MgO diluted magnetic thin films

NASA Astrophysics Data System (ADS)

Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

2017-02-01

Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

Ultrathin and lightweight organic solar cells with high flexibility

PubMed Central

Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

2012-01-01

Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

Ultrathin Au-Alloy Nanowires at the Liquid-Liquid Interface.

PubMed

Chatterjee, Dipanwita; Shetty, Shwetha; Müller-Caspary, Knut; Grieb, Tim; Krause, Florian F; Schowalter, Marco; Rosenauer, Andreas; Ravishankar, Narayanan

2018-03-14

Ultrathin bimetallic nanowires are of importance and interest for applications in electronic devices such as sensors and heterogeneous catalysts. In this work, we have designed a new, highly reproducible and generalized wet chemical method to synthesize uniform and monodispersed Au-based alloy (AuCu, AuPd, and AuPt) nanowires with tunable composition using microwave-assisted reduction at the liquid-liquid interface. These ultrathin alloy nanowires are below 4 nm in diameter and about 2 μm long. Detailed microstructural characterization shows that the wires have an face centred cubic (FCC) crystal structure, and they have low-energy twin-boundary and stacking-fault defects along the growth direction. The wires exhibit remarkable thermal and mechanical stability that is critical for important applications. The alloy wires exhibit excellent electrocatalytic activity for methanol oxidation in an alkaline medium.

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

NASA Technical Reports Server (NTRS)

Ueda, A.; Mu, R.; Tung, Y. -S.; Henderson, D. O.; White, C. W.; Zuhr, R. A.; Zhu, Jane G.; Wang, P. W.

1997-01-01

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Stabilization of Reactive MgO Surfaces by Ni Doping

NASA Astrophysics Data System (ADS)

Mazheika, Aliaksei; Levchenko, Sergey V.

Ni-MgO solid solutions are promising materials for catalytic reduction of CO2 and dry reforming of CH4. To explain the catalytic activity, an ab initio study of Ni-substitutional defects in MgO (NiMg) has been performed. At first, the validation of the theory level was done. We compared results of CCSD(T) embedded-cluster calculations of NiMg formation energies and adsorption energies of CO, CO2 and H2 on them to the HSE(α) hybrid DFT functional with the fraction of the exact exchange α varied between 0 and 1. HSE(0.3) was found to be the best compromise in this study. Our periodic HSE(0.3) calculations show that NiMg defects are most stable at corner sites, followed by steps, and are least stable at (001) terraces. Thus, Ni-doping stabilizes stepped MgO surfaces. The dissociative adsorption of H2 on the terrace is found to be endothermic (+ 1 . 1 eV), whereas on (110) surface with NiMg it is highly exothermic (- 1 . 6 eV). Adsorbed CO2 is also significantly stabilized (- 0 . 6 vs. - 2 . 2 eV). These findings explain recent microcalorimetry measurements of H2 and CO2 adsorption at doped Ni-MgO samples. partially supported by UniCat (Deutsche Forschungsgemeinschaft).

Designing metal hemispheres on silicon ultrathin film solar cells for plasmonic light trapping.

PubMed

Gao, Tongchuan; Stevens, Erica; Lee, Jung-kun; Leu, Paul W

2014-08-15

We systematically investigate the design of two-dimensional silver (Ag) hemisphere arrays on crystalline silicon (c-Si) ultrathin film solar cells for plasmonic light trapping. The absorption in ultrathin films is governed by the excitation of Fabry-Perot TEMm modes. We demonstrate that metal hemispheres can enhance absorption in the films by (1) coupling light to c-Si film waveguide modes and (2) exciting localized surface plasmon resonances (LSPRs). We show that hemisphere arrays allow light to couple to fundamental TEm and TMm waveguide modes in c-Si film as well as higher-order versions of these modes. The near-field light concentration of LSPRs also may increase absorption in the c-Si film, though these resonances are associated with significant parasitic absorption in the metal. We illustrate how Ag plasmonic hemispheres may be utilized for light trapping with 22% enhancement in short-circuit current density compared with that of a bare 100 nm thick c-Si ultrathin film solar cell.

The self streamlining wind tunnel. [wind tunnel walls

NASA Technical Reports Server (NTRS)

Goodyer, M. J.

1975-01-01

A two dimensional test section in a low speed wind tunnel capable of producing flow conditions free from wall interference is presented. Flexible top and bottom walls, and rigid sidewalls from which models were mounted spanning the tunnel are shown. All walls were unperforated, and the flexible walls were positioned by screw jacks. To eliminate wall interference, the wind tunnel itself supplied the information required in the streamlining process, when run with the model present. Measurements taken at the flexible walls were used by the tunnels computer check wall contours. Suitable adjustments based on streamlining criteria were then suggested by the computer. The streamlining criterion adopted when generating infinite flowfield conditions was a matching of static pressures in the test section at a wall with pressures computed for an imaginary inviscid flowfield passing over the outside of the same wall. Aerodynamic data taken on a cylindrical model operating under high blockage conditions are presented to illustrate the operation of the tunnel in its various modes.

Structure Formation of Ultrathin PEO Films at Solid Interfaces—Complex Pattern Formation by Dewetting and Crystallization

PubMed Central

Braun, Hans-Georg; Meyer, Evelyn

2013-01-01

The direct contact of ultrathin polymer films with a solid substrate may result in thin film rupture caused by dewetting. With crystallisable polymers such as polyethyleneoxide (PEO), molecular self-assembly into partial ordered lamella structures is studied as an additional source of pattern formation. Morphological features in ultrathin PEO films (thickness < 10 nm) result from an interplay between dewetting patterns and diffusion limited growth pattern of ordered lamella growing within the dewetting areas. Besides structure formation of hydrophilic PEO molecules, n-alkylterminated (hydrophobic) PEO oligomers are investigated with respect to self-organization in ultrathin films. Morphological features characteristic for pure PEO are not changed by the presence of the n-alkylgroups. PMID:23385233

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Magnetic x-ray linear dichroism of ultrathin Fe-Ni alloy films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, F.O.; Willis, R.F.; Goodman, K.W.

1997-04-01

The authors have studied the magnetic structure of ultrathin Fe-Ni alloy films as a function of Fe concentration by measuring the linear dichroism of the 3p-core levels in angle-resolved photoemission spectroscopy. The alloy films, grown by molecular-beam epitaxy on Cu(001) surfaces, were fcc and approximately four monolayers thick. The intensity of the Fe dichroism varied with Fe concentration, with larger dichroisms at lower Fe concentrations. The implication of these results to an ultrathin film analogue of the bulk Invar effect in Fe-Ni alloys will be discussed. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Lightmore » Source.« less

Spin fluctuation induced linear magnetoresistance in ultrathin superconducting FeSe films

DOE PAGES

Wang, Qingyan; Zhang, Wenhao; Chen, Weiwei; ...

2017-07-21

The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transitionmore » region in ultrathin FeSe/STO films.« less

The influence of an MgO nanolayer on the planar Hall effect in NiFe films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Minghua, E-mail: mhli@ustb.edu.cn; Department of Electrical Engineering, University of California, Los Angeles, California 90095; Zhao, Zhiduo

2015-03-28

The Planar Hall Effect (PHE) in NiFe films was studied using MgO as the buffer and capping layer to reduce the shunt effect. The thermal annealing was found to be effective in increasing the sensitivity. The sensitivity of the magnetic field reached as high as 865 V/AT in a MgO (3 nm)/NiFe (5 nm)/MgO(3 nm)/Ta(3 nm) structure after annealing at 500 °C for 2 h, which is close to the sensitivity of semiconductor Hall Effect (HE) sensors. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to study the sample. The results show that the top crystallization of MgO and NiFemore » (111) texture were improved by proper annealing. The smooth and clear bottom MgO/NiFe and top NiFe/MgO interface is evident from our data. In addition, the shunt current of Ta was decreased. These combined factors facilitate the improvement of the sensitivity of the magnetic field.« less

The role of thin MgO(100) epilayer for polarized charge injection into top-emitting OLED

NASA Astrophysics Data System (ADS)

Kim, Tae Hee; Jong Lee, Nyun; Bae, Yu Jeong; Cho, Hyunduck; Lee, Changhee; Ito, Eisuke

2012-02-01

A new top-emitting OLED (TOLED) structure, which is formed on an Si(100) substrate and an epitaxial MgO(100)/Fe(100)/MgO(100) bottom electrode, was investigated. Our TOLED design included a semi-transparent cathode Al, a stack of conventional organic electroluminescent layers (α-NPD/Alq3/LiF) and a thin Cu-Phthalocyanine (CuPc) film to enhance the hole injection into the luminescent layers. At room temperature (RT), magnetoluminescence of ˜5 % was observed in low magnetic field up to 1 Tesla , which is obviously larger than that of the OLEDs with epitaxial and polycrystalline Fe anodes without MgO(100) covering layer. Our results indicate that the magnetic field effect on the electroluminescence could be strongly related to the magnetic properties of bottom electrode, more precisely the interfacial properties between CuPc layer and the anode. Therefore, we focused on understanding interface electronic states and energy alignment by using x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. Our results showed that the use of appropriate oxide layers could represent a new interface engineering technique for improving reliability and functionality in organic semiconductor devices.

Identification of O-rich structures on platinum(111)-supported ultrathin iron oxide films

DOE PAGES

Merte, Lindsay R.; Bai, Yunhai; Zeuthen, Helene; ...

2016-01-06

Using high-resolution scanning tunneling microscopy (STM) we have studied the oxidation of ultrathin FeO films grown on Pt(111). At the initial stage of the FeO film oxidation by atomic oxygen exposure, we identified three distinct types of line defects, all of which form boundaries between FeO domains of opposite orientation. Two types of line defects appearing bright ( type-i) and dark ( type-ii) in the STM images at typical scanning parameters are “metallic”, whereas the third line defect exhibits nonmetallic behavior ( type-iii). Atomic-scale structure models of these line defects are proposed, with type-i defects exhibiting 4-fold coordinated Fe atoms,more » type-ii exhibiting 2-fold coordinated O atoms, and type-iii exhibiting tetrahedrally-coordinated Fe atoms. In addition, FeO 2 trilayer islands are formed upon oxidation, which appear at FCC-type domains of the moiré structure. At high scanning bias, distinct protrusions on the trilayer islands are observed over surface O ions, which are assigned to H adatoms. The experimental data are supported by density functional theory (DFT) calculations, in which bare and hydroxylated FeO 2 trilayer islands are compared. Finally, we compare the formation of O-rich features on continuous FeO films using atomic oxygen with the oxidation of Pt(111)-supported FeO islands accomplished by O 2 exposure.« less

Tunnel and Station Cost Methodology : Mined Tunnels

DOT National Transportation Integrated Search

1983-01-01

The main objective of this study was to develop a model for estimating the cost of subway station and tunnel construction. This report describes a cost estimating methodology for subway tunnels that can be used by planners, designers, owners, and gov...

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Surface and local electronic structure modification of MgO film using Zn and Fe ion implantation

NASA Astrophysics Data System (ADS)

Singh, Jitendra Pal; Lim, Weon Cheol; Lee, Jihye; Song, Jonghan; Lee, Ik-Jae; Chae, Keun Hwa

2018-02-01

Present work is motivated to investigate the surface and local electronic structure modifications of MgO films implanted with Zn and Fe ions. MgO film was deposited using radio frequency sputtering method. Atomic force microscopy measurements exhibit morphological changes associated with implantation. Implantation of Fe and Zn ions leads to the reduction of co-ordination geometry of Mg2+ ions in host lattice. The effect is dominant at bulk of film rather than surface as the large concentration of implanted ions resides inside bulk. Moreover, the evidences of interaction among implanted ions and oxygen are not being observed using near edge fine structure measurements.

Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes.

PubMed

Choi, Moon Kee; Yang, Jiwoong; Kim, Dong Chan; Dai, Zhaohe; Kim, Junhee; Seung, Hyojin; Kale, Vinayak S; Sung, Sae Jin; Park, Chong Rae; Lu, Nanshu; Hyeon, Taeghwan; Kim, Dae-Hyeong

2018-01-01

Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such "see-through" displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m -2 , top: ≈30 000 cd m -2 , total: ≈73 000 cd m -2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in. -1 ) shows the potential of the full-color transparent display. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Capillary sample introduction of polymerase chain reaction (PCR) products separated in ultrathin slab gels.

PubMed

Bullard, K M; Hietpas, P B; Ewing, A G

1998-01-01

Polymerase chain reaction (PCR) amplified short tandem repeat (STR) samples from the HUMVWF locus have been analyzed using a unique sample introduction and separation technique. A single capillary is used to transfer samples onto an ultrathin slab gel (57 microm thin). This ultrathin nondenaturing polyacrylamide gel is used to separate the amplified fragments, and laser-induced fluorescence with ethidium bromide is used for detection. The feasibility of performing STR analysis using this system has been investigated by examining the reproducibility for repeated samples. Reproducibility is examined by comparing the migration of the 14 and 17 HUMVWF alleles on three consecutive separations on the ultrathin slab gel. Using one locus, separations match in migration time with the two alleles 42 s apart for each of the three consecutive separations. This technique shows potential to increase sample throughput in STR analysis techniques although separation resolution still needs to be improved.

First principles and Debye model study of the thermodynamic, electronic and optical properties of MgO under high-temperature and pressure

NASA Astrophysics Data System (ADS)

Miao, Yurun; Li, Huayang; Wang, Hongjuan; He, Kaihua; Wang, Qingbo

2018-02-01

First principles and quasi-harmonic Debye model have been used to study the thermodynamic properties, enthalpies, electronic and optical properties of MgO up to the core-mantle boundary (CMB) condition (137 GPa and 3700 K). Thermodynamic properties calculation includes thermal expansion coefficient and capacity, which have been studied up to the CMB pressure (137 GPa) and temperature (3700 K) by the Debye model with generalized gradient approximation (GGA) and local-density approximation (LDA). First principles with hybrid functional method (PBE0) has been used to calculate the electronic and optical properties under pressure up to 137 GPa and 0 K. Our results show the Debye model with LDA and first principles with PBE0 can provide accurate thermodynamic properties, enthalpies, electronic and optical properties. Calculated enthalpies show that MgO keep NaCl (B1) structure up to 137 GPa. And MgO is a direct bandgap insulator with a 7.23 eV calculated bandgap. The bandgap increased with increasing pressure, which will induce a blue shift of optical properties. We also calculated the density of states (DOS) and discussed the relation between DOS and band, optical properties. Equations were used to fit the relations between pressure and bandgaps, absorption coefficient (α(ω)) of MgO. The equations can be used to evaluate pressure after careful calibration. Our calculations can not only be used to identify some geological processes, but also offer a reference to the applications of MgO in the future.

View down tank tunnel (tunnel no. 2) showing pipes and ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View down tank tunnel (tunnel no. 2) showing pipes and walkway of metal grating, side tunnel to tank 3 is on the left - U.S. Naval Base, Pearl Harbor, Diesel Purification Plant, North Road near Pierce Street, Pearl City, Honolulu County, HI

Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuan, Z. H.; Huang, L.; Feng, J. F., E-mail: jiafengfeng@iphy.ac.cn

2015-08-07

MgO magnetic tunnel junction (MTJ) sensors with spin-valve-like sensing layers of Ir{sub 22}Mn{sub 78} (6)/Ni{sub 80}Fe{sub 20} (t{sub NiFe} = 20–70)/Ru (0.9)/Co{sub 40}Fe{sub 40}B{sub 20} (3) (unit: nm) have been fabricated. A linear field dependence of magnetoresistance for these MTJ sensors was obtained by carrying out a two-step field annealing process. The sensitivity and linear field range can be tuned by varying the thickness of NiFe layer and annealing temperature, and a high sensitivity of 37%/mT has been achieved in the MTJ sensors with 70 nm NiFe at the optimum annealing temperature of 230 °C. Combining the spin-valve-like sensing structure and a soft magneticmore » NiFe layer, MTJ sensors with relatively wide field sensing range have been achieved and could be promising for showing high sensitivity magnetic field sensing applications.« less

New drainage tunnel of the tunnel Višňové - design and excavation

NASA Astrophysics Data System (ADS)

Jurík, Igor; Grega, Ladislav; Valko, Jozef; Janega, Peter

2017-09-01

The actual pilot tunnel dated to the period of geological and hydrogeological survey, is designed as a part of the tunnel Višňové, which is located at the section of the D1 motorway Lietavská Lúčka - Višňové - Dubná Skala in Slovakia. Drainage tunnel will be used for the drainage of the main tunnel tubes, where the maximum inflow from the eastern portal is greater than 250 l.s-1. Overlapping of the initial pilot tunnel with the profile of the southern tunnel tube led to the demolition of the portal sections of the pilot tunnel during the excavation of main tunnel tubes. These sections were replaced by new drainage tunnels, with the lengths of 288.0 meters from west portal and 538.0 meters from eastern portal, to ensure access from both portals. The new drainage tunnel is excavated under the level of the two main tunnel tubes. Drainage pipes with a diameter of 250 mm will be installed from cleaning niches in the main tunnel tubes to the new drainage tunnel.

Ultra-thin whitetopping for general aviation airports in New Mexico.

DOT National Transportation Integrated Search

2002-06-01

Whitetopping is a pavement rehabilitation construction practice where portland cement concrete (PCC) is placed over an existing asphalt concrete pavement as an overlay. Ultra-thin whitetopping (UTW) is generally a thin overlay with a thickness betwee...

Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhusan Singh, Braj; Chaudhary, Sujeet

2012-09-15

The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thinmore » MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 Degree-Sign C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.« less

Carpal Tunnel Syndrome

MedlinePlus

... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...

Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanan, K., E-mail: saravanan@igcar.gov.in; Jayalakshmi, G.; Krishnan, R.

We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influencemore » of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.« less

Electrical conduction of organic ultrathin films evaluated by an independently driven double-tip scanning tunneling microscope.

PubMed

Takami, K; Tsuruta, S; Miyake, Y; Akai-Kasaya, M; Saito, A; Aono, M; Kuwahara, Y

2011-11-02

The electrical transport properties of organic thin films within the micrometer scale have been evaluated by a laboratory-built independently driven double-tip scanning tunneling microscope, operating under ambient conditions. The two tips were used as point contact electrodes, and current in the range from 0.1 pA to 100 nA flowing between the two tips through the material can be detected. We demonstrated two-dimensional contour mapping of the electrical resistance on a poly(3-octylthiophene) thin films as shown below. The obtained contour map clearly provided an image of two-dimensional electrical conductance between two point electrodes on the poly(3-octylthiophene) thin film. The conductivity of the thin film was estimated to be (1-8) × 10(-6) S cm(-1). Future prospects and the desired development of multiprobe STMs are also discussed.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability.

PubMed

Kim, Jungdae; Nam, Hyoungdo; Qin, Shengyong; Kim, Sang-ui; Schroeder, Allan; Eom, Daejin; Shih, Chih-Kang

2015-09-01

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper and stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.

Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alimardani, Nasir; Conley, John F., E-mail: jconley@eecs.oregonstate.edu

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling,more » and operation is relatively insensitive to temperature.« less

Surface structure of MgO underlayer with Ti diffusion for (002) oriented L10 FePt-based heat assisted magnetic recording media

NASA Astrophysics Data System (ADS)

Hinata, Sintaro; Jo, Shin; Saito, Shin

2018-05-01

Surface morphology of the MgO layer and magnetic properties of FePt-C layer deposited on the MgO were investigated for the FePt-based heat assisted magnetic recording media. Stacking structure of the underlayer for the FePt-C layer was MgO (0-5 nm)/Cr80Mn20 (0-30 nm)/Cr50Ti50 (0-50 nm)/glass sub.. Surface observation result for the MgO film by using an atomic force microscope revealed the existence of nodules with a height of about 2 nm and a network-like convex structure with a height difference of about sub nm (boundary wall, BW) on the MgO crystal grain boundary. Density of the nodules largely depends on the surface roughness of the CrTi layer, RaCrTi and it is suppressed from 10 to 2/0.5 μm2 by reducing RaCrTi from 420 to 260 pm. Height of the BW depends on thickness of the MgO layer, tMgO and it can be suppressed by reducing tMgO to less than 4 nm. From the cross-sectional energy dispersive x-ray mapping, it is clarified that the BW is formed by atomic diffusion of Ti atoms from CrTi layer due to the substrate heating process, and a compound consists of Mg, Ti and O atoms. This BW can be used as a template to magnetically isolate the FePt column in the FePt-based granular film, such as FePt-SiO2, if the size of the BW is reduced to less than 10 nm. M-H loop of the FePt-C granular film deposited on the underlayer showed that the nodule and BW induce oxidation of the FePt grains, and reduction of intergranular exchange coupling.

Transport properties of ultrathin BaFe1.84Co0.16As2 superconducting nanowires

NASA Astrophysics Data System (ADS)

Yuan, Pusheng; Xu, Zhongtang; Li, Chen; Quan, Baogang; Li, Junjie; Gu, Changzhi; Ma, Yanwei

2018-07-01

Superconducting nanowire single-photon detectors (SNSPDs) have an absolute advantage over other types of single-photon detectors, except for the low operating temperature. Therefore, much effort has been devoted to finding high-temperature superconducting materials that are suitable for preparing SNSPDs. Copper-based and MgB2 ultrathin superconducting nanowires have already been reported. However, the transport properties of iron-based ultrathin superconducting nanowires have not been studied. In this work, a 10 nm thick × 200 nm wide × 30 μm long high-quality superconducting nanowire was fabricated from ultrathin BaFe1.84Co0.16As2 films by a lift-off process. The precursor BaFe1.84Co0.16As2 film with a thickness of 10 nm and root-mean-square roughness of 1 nm was grown on CaF2 substrates by pulsed laser deposition. The nanowire shows a high superconducting critical temperature {T}{{c}}{{zero}} = 20 K with a narrow transition width of ΔT = 2.5 K and exhibits a high critical current density J c of 1.8 × 107 A cm-2 at 10 K. These results of ultrathin BaFe1.84Co0.16As2 nanowire will attract interest in electronic applications, including SNSPDs.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

PubMed

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Suppression of superconductivity in epitaxial MgB2 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Yue; Wang, Da; Zhang, Yan; Liu, Zheng-Hao; Feng, Qing-Rong; Gan, Zi-Zhao

2013-07-01

MgB2 ultrathin films have potential to make sensitive superconducting devices such as superconducting single-photon detectors working at relatively high temperatures. We have grown epitaxial MgB2 films in thicknesses ranging from about 40 nm to 6 nm by using the hybrid physical-chemical vapor deposition method and performed electrical transport measurements to study the thickness dependence of the superconducting critical temperature Tc. With reducing film thickness d, although a weak depression of the Tc has been observed, which could be attributed to an increase of disorder (interband impurity scattering) in the film, the Tc retains close to the bulk value of MgB2 (39 K), being about 35 K in the film of 6 nm thick. We show that this result, beneficial to the application of MgB2 ultrathin films and in accordance with recent theoretical calculations, is in contrast to previous findings in MgB2 films prepared by other methods such as co-evaporation and molecular-beam epitaxy, where a severe Tc suppression has been observed with Tc about one third of the bulk value in films of ˜5 nm thick. We discuss this apparent discrepancy in experiments and suggest that, towards the ultrathin limit, the different degrees of Tc suppression displayed in currently obtained MgB2 films by various techniques may arise from the different levels of disorder present in the film or different extents of proximity effect at the film surface or film-substrate interface.

Metalliclike behavior of the exchange coupling in (001) Fe/MgO/Fe junctions

NASA Astrophysics Data System (ADS)

Bellouard, C.; Duluard, A.; Snoeck, E.; Lu, Y.; Negulescu, B.; Lacour, D.; Senet, C.; Robert, S.; Maloufi, N.; Andrieu, S.; Hehn, M.; Tiusan, C.

2017-10-01

Exchange magnetic coupling between Fe electrodes through a thin MgO interlayer in epitaxial junctions has been investigated as a function of temperature, MgO thickness, and interface quality. Depending on the MgO thickness, which has been varied from 1.5 to 4 monolayers, two opposite temperature dependences are clearly disentangled. For a thin MgO spacer, the main component decreases with temperature following a metalliclike behavior. On the contrary, for the thickest MgO layers, the main component increases with temperature, following an Arrhenius law. Moreover, the insertion of a monoatomic roughness at the bottom MgO interface, induced by the addition of a fraction of a Fe monolayer, exacerbates the metallic features as an oscillatory behavior from antiferromagnetic to ferromagnetic is observed. These results allow questioning the simple tunneling mechanism usually invoked for MgO coupling, and suggest a crossover behavior of the thin MgO spacer from metallic to insulating with a progressive opening of the gap.

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

DOE PAGES

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing; ...

2016-08-27

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films

NASA Astrophysics Data System (ADS)

Sidorova, Mariia V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Yu. P.; Mikhailov, M. Yu.; Devizenko, A. Yu.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N.

2018-05-01

We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe -ph˜14 0 -19 0 ps at TC=3.4 K , supporting the results of earlier measurements by independent techniques.

EDMOS in ultrathin FDSOI: Impact of the drift region properties

NASA Astrophysics Data System (ADS)

Litty, Antoine; Ortolland, Sylvie; Golanski, Dominique; Dutto, Christian; Cristoloveanu, Sorin

2016-11-01

The development of high-voltage MOSFET (HVMOS) is necessary for including power management or radiofrequency functionalities in CMOS technology. In this paper, we investigate the fabrication and optimization of an Extended Drain MOSFET (EDMOS) directly integrated in the ultra-thin SOI film (7 nm) of the 28 nm FDSOI CMOS technology node. Thanks to TCAD simulations, we analyse in detail the device behaviour as a function of the doping level and length of the drift region. The influence of the back-plane doping type and of the back-biasing schemes is discussed. DC measurements of fabricated EDMOS samples reveal promising performances in particular in terms of specific on-resistance versus breakdown voltage trade-off. The experimental results indicate that, even in an ultrathin film, the engineering of the drift region could be a lever to obtain integrated HVMOS (3.3-5 V).

Ultra-thin smart acoustic metasurface for low-frequency sound insulation

NASA Astrophysics Data System (ADS)

Zhang, Hao; Xiao, Yong; Wen, Jihong; Yu, Dianlong; Wen, Xisen

2016-04-01

Insulating low-frequency sound is a conventional challenge due to the high areal mass required by mass law. In this letter, we propose a smart acoustic metasurface consisting of an ultra-thin aluminum foil bonded with piezoelectric resonators. Numerical and experimental results show that the metasurface can break the conventional mass law of sound insulation by 30 dB in the low frequency regime (<1000 Hz), with an ultra-light areal mass density (<1.6 kg/m2) and an ultra-thin thickness (1000 times smaller than the operating wavelength). The underlying physical mechanism of such extraordinary sound insulation performance is attributed to the infinite effective dynamic mass density produced by the smart resonators. It is also demonstrated that the excellent sound insulation property can be conveniently tuned by simply adjusting the external circuits instead of modifying the structure of the metasurface.

Metastable self-trapping of positrons in MgO

NASA Astrophysics Data System (ADS)

Monge, M. A.; Pareja, R.; González, R.; Chen, Y.

1997-01-01

Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62+/-5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.

Anatase TiO2 ultrathin nanobelts derived from room-temperature-synthesized titanates for fast and safe lithium storage

PubMed Central

Wen, Wei; Wu, Jin-ming; Jiang, Yin-zhu; Yu, Sheng-lan; Bai, Jun-qiang; Cao, Min-hua; Cui, Jie

2015-01-01

Lithium-ion batteries (LIBs) are promising energy storage devices for portable electronics, electric vehicles, and power-grid applications. It is highly desirable yet challenging to develop a simple and scalable method for constructions of sustainable materials for fast and safe LIBs. Herein, we exploit a novel and scalable route to synthesize ultrathin nanobelts of anatase TiO2, which is resource abundant and is eligible for safe anodes in LIBs. The achieved ultrathin nanobelts demonstrate outstanding performances for lithium storage because of the unique nanoarchitecture and appropriate composition. Unlike conventional alkali-hydrothermal approaches to hydrogen titanates, the present room temperature alkaline-free wet chemistry strategy guarantees the ultrathin thickness for the resultant titanate nanobelts. The anatase TiO2 ultrathin nanobelts were achieved simply by a subsequent calcination in air. The synthesis route is convenient for metal decoration and also for fabricating thin films of one/three dimensional arrays on various substrates at low temperatures, in absence of any seed layers. PMID:26133276

Safety in tunnels : transport of dangerous goods through road tunnels : highlights

DOT National Transportation Integrated Search

2001-10-01

A serious incident involving dangerous goods in a tunnel can be extremely costly in terms of loss of human lives, environmental degradation, tunnel damage and transport disruption. On the other hand, needlessly banning dangerous goods from tunnels ma...

Ultrathin cerium orthovanadate nanobelts for high-performance flexible all-solid-state asymmetric supercapacitors.

PubMed

He, Junzhi; Zhao, Junhong; Run, Zhen; Sun, Mengjun; Pang, Huan

2015-02-01

Ultrathin CeVO4 nanobelts were successfully synthesized by a hydrothermal method. The thickness of a single nanobelt is about 2.4 nm, which can effectively shorten the ion diffusion and fasten the charge pathway. More importantly, ultrathin CeVO4 nanobelts and graphene are easily assembled as a flexible all-solid-state asymmetric device, which shows a highly flexible property and achieves a maximum energy density of 0.78 mW h cm(-3) and a high life cycle of >6000 cycles. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of absorption and color contrast in ultra-thin highly absorbing optical coatings

NASA Astrophysics Data System (ADS)

Kats, Mikhail A.; Byrnes, Steven J.; Blanchard, Romain; Kolle, Mathias; Genevet, Patrice; Aizenberg, Joanna; Capasso, Federico

2013-09-01

Recently a new class of optical interference coatings was introduced which comprises ultra-thin, highly absorbing dielectric layers on metal substrates. We show that these lossy coatings can be augmented by an additional transparent subwavelength layer. We fabricated a sample comprising a gold substrate, an ultra-thin film of germanium with a thickness gradient, and several alumina films. The experimental reflectivity spectra showed that the additional alumina layer increases the color range that can be obtained, in agreement with calculations. More generally, this transparent layer can be used to enhance optical absorption, protect against erosion, or as a transparent electrode for optoelectronic devices.

Magnesium Vacancy Segregation and Fast Pipe Diffusion for the ½<110>{110} Edge Dislocation in MgO

NASA Astrophysics Data System (ADS)

Walker, A. M.; Zhang, F.; Wright, K.; Gale, J. D.

2009-12-01

The movement of point defects in minerals plays a key role in determining their rheological properties, both by permitting diffusional creep and by allowing recovery by dislocation climb. Point defect diffusion can also control the kinetics of phase transitions and grain growth, and can determine the rate of chemical equilibration between phases. Because of this, and the difficulties associated with experimental studies of diffusion, the simulation of point defect formation and migration has been a subject of considerable interest in computational mineral physics. So far, studies have concentrated on point defects moving through otherwise perfect crystals. In this work we examine the behavior of magnesium vacancies close to the core of an edge dislocation in MgO and find that the dislocation dramatically changes the behavior of the point defect. An atomic scale model of the ½<110>{110} edge dislocation in MgO was constructed by applying the anisotropic linear elastic displacement field to the crystal structure and subsequently minimizing the energy of the crystal close to the dislocation core using a parameterized potential model. This process yielded the structure of an isolated edge dislocation in an otherwise perfect crystal. The energy cost associated with introducing magnesium vacancies around the dislocation was then mapped and compared to the formation energy of an isolated magnesium vacancy in bulk MgO. We find that the formation energy of magnesium vacancies around the dislocation mirrors the elastic strain field. Above the dislocation line σxx and σyy are negative and the strain field is compressional. Atoms are squeezed together to make room for the extra half plane effectively increasing the pressure in this region. Below the dislocation line σxx and σyy are positive and the strain field is dilatational. Planes of atoms are pulled apart to avoid a discontinuity across the glide plane and the effective pressure is decreased. In the region with a

Lubrication of dislocation glide in MgO by hydrous defects

NASA Astrophysics Data System (ADS)

Skelton, Richard; Walker, Andrew M.

2018-02-01

Water-related defects, principally in the form of protonated cation vacancies, are potentially able to weaken minerals under high-stress or low-temperature conditions by reducing the Peierls stress required to initiate dislocation glide. In this study, we use the Peierls-Nabarro (PN) model to determine the effect of protonated Mg vacancies on the 1/2<110>{110} and 1/2<110>{100} slip systems in MgO. This PN model is parameterized using generalized stacking fault energies calculated using plane-wave density functional theory, with and without protonated Mg vacancies present at the glide plane. It found that these defects increase dislocation core widths and reduce the Peierls stress over the entire pressure range 0-125 GPa. Furthermore, 1/2<110>{110} slip is found to be more sensitive to the presence of protonated vacancies which increases in the pressure at which {100} becomes the easy glide plane for 1/2<110> screw dislocations. These results demonstrate, for a simple mineral system, that water-related defects can alter the deformation behavior of minerals in the glide-creep regime by reducing the stress required to move dislocations by glide. (Mg, Fe)O is the most anisotropic mineral in the Earth's lower mantle, so the differential sensitivity of the major slip systems in MgO to hydrous defects has potential implications for the interpretation of the seismic anisotropy in this region.

Numeric simulation of occlusal interferences in molars restored with ultrathin occlusal veneers.

PubMed

Magne, Pascal; Cheung, Raymond

2017-01-01

Selecting material for a minimally invasive occlusal veneer reconstruction concept requires an understanding of how stresses are distributed during functional and parafunctional forces. The purpose of this in vitro study was to investigate stress distribution in a maxillary molar restored with ultrathin occlusal veneers and subjected by an antagonistic mandibular molar to clenching and working and nonworking movements. A maxillary first molar was modeled from microcomputed tomography (micro-CT) data, using medical image processing software, stereolithography editing/optimizing software, and finite element software. Simulated ultrathin occlusal veneer materials were used. The mandibular molar antagonist was a solid nondeformable geometric entity. Loads simulated clenching, working, and nonworking movements with loading of 500 N. The values of the maximum principal stress were recorded. In the clenching load situation, maximum tensile stresses were located at the occlusal veneer (52 MPa for composite resin versus 47 MPa for ceramic). In the working movement, significant additional tensile stresses were found on the palatal root (87 MPa for composite resin and 85 MPa for ceramic). In the nonworking movement, tensile stress on the ultrathin occlusal veneer increased to 118 MPa for composite resin and 143 MPa for ceramic veneers. Tensile stress peaks shifted to the mesiobuccal root (75 MPa for composite resin and 74 MPa for ceramic). The topography of stresses generated by the various occlusal interferences were clearly identified. Significant tensile stress concentrations were found within the restoration's occlusal topography and root, with the nonworking interference being the most harmful and also the most revealing of the difference between the composite resin and ceramic ultrathin occlusal veneers. Copyright © 2016 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

NASA Astrophysics Data System (ADS)

Cadieu, F. J.; Chen, Li; Li, Biao

2002-05-01

We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

Coupling of microphase separation and dewetting in weakly segregated diblock co-polymer ultrathin films.

PubMed

Yan, Derong; Huang, Haiying; He, Tianbai; Zhang, Fajun

2011-10-04

We have studied the coupling behavior of microphase separation and autophobic dewetting in weakly segregated poly(ε-caprolactone)-block-poly(L-lactide) (PCL-b-PLLA) diblock co-polymer ultrathin films on carbon-coated mica substrates. At temperatures higher than the melting point of the PLLA block, the co-polymer forms a lamellar structure in bulk with a long period of L ∼ 20 nm, as determined using small-angle X-ray scattering. The relaxation procedure of ultrathin films with an initial film thickness of h = 10 nm during annealing has been followed by atomic force microscopy (AFM). In the experimental temperature range (100-140 °C), the co-polymer dewets to an ultrathin film of itself at about 5 nm because of the strong attraction of both blocks with the substrate. Moreover, the dewetting velocity increases with decreasing annealing temperatures. This novel dewetting kinetics can be explained by a competition effect of the composition fluctuation driven by the microphase separation with the dominated dewetting process during the early stage of the annealing process. While dewetting dominates the relaxation procedure and leads to the rupture of the ultrathin films, the composition fluctuation induced by the microphase separation attempts to stabilize them because of the matching of h to the long period (h ∼ 1/2L). The temperature dependence of these two processes leads to this novel relaxation kinetics of co-polymer thin films. © 2011 American Chemical Society

FeO and MgO in plagioclase of lunar anorthosites: Igneous or metamorphic?

NASA Technical Reports Server (NTRS)

Phinney, W. C.

1994-01-01

The combined evidence from terrestrial anorthosites and experimental laboratory studies strongly implies that lunar anorthosites have been subjected to high-grade metamorphic events that have erased the igneous signatures of FeO and MgO in their plagioclases. Arguments to the contrary have, to this point, been more hopeful than rigorous.

Arrays of ultrathin silicon solar microcells

DOEpatents

Rogers, John A.; Rockett, Angus A.; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2015-08-11

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Arrays of ultrathin silicon solar microcells

DOEpatents

Rogers, John A; Rockett, Angus A; Nuzzo, Ralph; Yoon, Jongseung; Baca, Alfred

2014-03-25

Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 .mu.m and, for example, is made from low grade Si.

Tg and Structural Recovery of Single Ultrathin Films

NASA Astrophysics Data System (ADS)

Simon, Sindee

The behavior of materials confined at the nanoscale has been of considerable interest over the past two decades. Here, the focus is on recent results for single polystyrene ultrathin films studied with ultrafast scanning chip calorimetry. The Tg depression of a 20 nm-thick high-molecular-weight polystyrene film is found to be a function of cooling rate, decreasing with increasing cooling rate; whereas, at high enough cooling rates (e.g., 1000 K/s), Tg is the same as the bulk within the error of the measurements. Structural recovery is also performed with chip calorimetry as a function of aging time and temperature, and the evolution of the fictive temperature is followed. The advantages of the Flash DSC include sufficient sensitivity to measure enthalpy recovery for a single 20 nm-thick film, as well as extension of the measurements to aging temperatures as high as 15 K above nominal Tg and to aging times as short as 0.01 s. The aging behavior and relaxation time-temperature map for single ultrathin films are compared to those for bulk material. Comparison to behavior in other geometries will also be discussed.

Influence of Short Distance Super-large Diameter Shield Tunneling on Existing Tunnels in Sea Areas

NASA Astrophysics Data System (ADS)

Li, Zhuolin; Liu, Dagang; Wang, Mingnian; Xiao, Shihui; Yuan, Jiawei

2018-03-01

In oder to find out the influence of large diameter shield tunneling on the existing tunnel under the condition of compound strata in the sea area, taking the Maliuzhou traffic tunnel as the research background, numerical simulation and field test were combined to get the regulation of the additional internal force and deformation of the existing tunnel caused by the shield tunneling. Analysis of the data showed that: the shield construction caused the secondary additional internal force; The moment of the vault was most affected by the tunnel excavation; The axial force of the arch bottom was most affected by the excavation of the tunnel. The deformation of arch waist near excavation tunnel was more affected by tunnel excavation than that of the other side. Combined with the construction experience, the influence of the tunnel close-distance construction on the existing tunnel was within the control range, which could ensure the normal construction.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków; Nozaki, Takayuki

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes inmore » the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.« less

Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

DOE PAGES

Peer, Akshit; Biswas, Rana

2016-02-01

In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller thanmore » the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.« less

Process for growing a film epitaxially upon a MGO surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Hydrogen peroxide sensing using ultrathin platinum-coated gold nanoparticles with core@shell structure.

PubMed

Li, Yongxin; Lu, Qiufang; Wu, Shengnan; Wang, Lun; Shi, Xianming

2013-03-15

Ultrathin platinum-coated gold (Pt@Au) nanoparticles with core@shell structure have been developed by under-potential deposition (UPD) redox replacement technique. A single UPD Cu replacement with Pt(2+) produced a uniform Pt monolayer on the surface of gold nanoparticles, which are immobilized on glassy carbon electrode (GCE) surface based on electrostatic interaction. The ultrathin Pt@Au nanoparticles were confirmed by cyclic voltammetry and X-ray photoelectron spectroscopy (XPS). Voltammetry and amperometric methodologies were used to evaluate the electrocatalytic activity of the Pt@Au nanoparticles modified electrode towards the reduction of hydrogen peroxide under the physiological condition. The present results show that ultrathin Pt coating greatly enhances the electrocatalytic activity towards the reduction of hydrogen peroxide, which can be utilized to fabricate the hydrogen peroxide sensor. Chronoamperometric experiments showed that at an applied potential of 0.08 V (vs. Ag/AgCl), the current reduction of hydrogen peroxide was linear to its concentration in the range of 1-450 μΜ, and the detection limit was found to be 0.18 μM (signal-to-noise ratio, S/N=3). Copyright © 2012 Elsevier B.V. All rights reserved.

All-solid-state flexible ultrathin micro-supercapacitors based on graphene.

PubMed

Niu, Zhiqiang; Zhang, Li; Liu, Lili; Zhu, Bowen; Dong, Haibo; Chen, Xiaodong

2013-08-07

Flexible, compact, ultrathin and all-solid-state micro-supercapacitors are prepared by coating H₃PO₄/PVA gel electrolyte onto micro-patterned rGO interdigitated electrodes prepared by combining photolithography with selective electrophoretic deposition. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effective NaBH4-exfoliated ultrathin multilayer Co(OH)2 nanosheets arrays and sulfidation for energy storage

NASA Astrophysics Data System (ADS)

Yang, Wanjun; Qu, Gan; Chen, Mingyue; Ma, Wenhao; Li, Wenhui; Tang, Yiwen

2018-07-01

Facile engineering ultrathin nano structural materials is still a huge challenge for material science. Thereinto, the strategy of exfoliating shows great advantages. In this work, we develop a convenient approach to exfoliate Co(OH)2 nanosheets into ultrathin Co(OH)2 nanoflakes through NaBH4-exfoliation method. Moreover, the microstructures of the Co(OH)2 nanosheets are conveniently controlled by varying the exfoliation time. As a result, the obtained ultrathin Co(OH)2-72 h nanosheets deliver the excellent electrochemical performance. In order to improve the energy storage properties, the obtained ultrathin Co(OH)2 nanosheets are further modified to enhance the conductivity via sulfidation. Consequently, the synthesized Co(OH)2-72 h/CoS2 composites exhibit a specific capacitance of 2536 F g‑1 at 1 A g‑1, which is more outstanding than that of Co(OH)2-72 h. What’s more, the Co(OH)2-72 h/CoS2 composites show a capacitance retention of 83.3% after 10 000 cycles. Besides, the assembled asymmetric supercapacitor displays a power density of 482 W kg‑1 at an energy density of 36 Wh kg‑1, demonstrating a large potential for application.

Effective NaBH4-exfoliated ultrathin multilayer Co(OH)2 nanosheets arrays and sulfidation for energy storage.

PubMed

Yang, Wanjun; Qu, Gan; Chen, Mingyue; Ma, Wenhao; Li, Wenhui; Tang, Yiwen

2018-07-20

Facile engineering ultrathin nano structural materials is still a huge challenge for material science. Thereinto, the strategy of exfoliating shows great advantages. In this work, we develop a convenient approach to exfoliate Co(OH) 2 nanosheets into ultrathin Co(OH) 2 nanoflakes through NaBH 4 -exfoliation method. Moreover, the microstructures of the Co(OH) 2 nanosheets are conveniently controlled by varying the exfoliation time. As a result, the obtained ultrathin Co(OH) 2 -72 h nanosheets deliver the excellent electrochemical performance. In order to improve the energy storage properties, the obtained ultrathin Co(OH) 2 nanosheets are further modified to enhance the conductivity via sulfidation. Consequently, the synthesized Co(OH) 2 -72 h/CoS 2 composites exhibit a specific capacitance of 2536 F g -1 at 1 A g -1 , which is more outstanding than that of Co(OH) 2 -72 h. What's more, the Co(OH) 2 -72 h/CoS 2 composites show a capacitance retention of 83.3% after 10 000 cycles. Besides, the assembled asymmetric supercapacitor displays a power density of 482 W kg -1 at an energy density of 36 Wh kg -1 , demonstrating a large potential for application.

Large-area thin self-supporting carbon foils with MgO coatings

NASA Astrophysics Data System (ADS)

Stolarz, Anna; Maier-Komor, Peter

2002-03-01

Large area self-supporting carbon foils in the thickness of range of 8-22 μg/cm 2, coated with approximately 4 μg/cm 2 MgO have been prepared by e-gun evaporation. They were mounted on frames with apertures of 130 cm 2. Problems related to the parting agent preparation, floating procedure, and mounting onto frames are discussed. Special precautions necessary to avoid damage during foil drying, storage and transportation are suggested.

Electric field effect on exchange interaction in ultrathin Co films with ionic liquids

NASA Astrophysics Data System (ADS)

Ishibashi, Mio; Yamada, Kihiro T.; Shiota, Yoichi; Ando, Fuyuki; Koyama, Tomohiro; Kakizakai, Haruka; Mizuno, Hayato; Miwa, Kazumoto; Ono, Shimpei; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

2018-06-01

Electric-field modulations of magnetic properties have been extensively studied not only for practical applications but also for fundamental interest. In this study, we investigated the electric field effect on the exchange interaction in ultrathin Co films with ionic liquids. The exchange coupling J was characterized from the direct magnetization measurement as a function of temperature using Pt/ultrathin Co/MgO structures. The trend of the electric field effect on J is in good agreement with that of the theoretical prediction, and a large change in J by applying a gate voltage was observed by forming an electric double layer using ionic liquids.

Ultra-thin carbon-fiber paper fabrication and carbon-fiber distribution homogeneity evaluation method

NASA Astrophysics Data System (ADS)

Zhang, L. F.; Chen, D. Y.; Wang, Q.; Li, H.; Zhao, Z. G.

2018-01-01

A preparation technology of ultra-thin Carbon-fiber paper is reported. Carbon fiber distribution homogeneity has a great influence on the properties of ultra-thin Carbon-fiber paper. In this paper, a self-developed homogeneity analysis system is introduced to assist users to evaluate the distribution homogeneity of Carbon fiber among two or more two-value images of carbon-fiber paper. A relative-uniformity factor W/H is introduced. The experimental results show that the smaller the W/H factor, the higher uniformity of the distribution of Carbon fiber is. The new uniformity-evaluation method provides a practical and reliable tool for analyzing homogeneity of materials.

Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications.

PubMed

Nguyen, Tuan-Khoa; Phan, Hoang-Phuong; Kamble, Harshad; Vadivelu, Raja; Dinh, Toan; Iacopi, Alan; Walker, Glenn; Hold, Leonie; Nguyen, Nam-Trung; Dao, Dzung Viet

2017-12-06

Micromachined membranes are promising platforms for cell culture thanks to their miniaturization and integration capabilities. Possessing chemical inertness, biocompatibility, and integration, silicon carbide (SiC) membranes have attracted great interest toward biological applications. In this paper, we present the batch fabrication, mechanical characterizations, and cell culture demonstration of robust ultrathin epitaxial deposited SiC membranes. The as-fabricated ultrathin SiC membranes, with an ultrahigh aspect ratio (length/thickness) of up to 20 000, possess high a fracture strength up to 2.95 GPa and deformation up to 50 μm. A high optical transmittance of above 80% at visible wavelengths was obtained for 50 nm membranes. The as-fabricated membranes were experimentally demonstrated as an excellent substrate platform for bio-MEMS/NEMS cell culture with the cell viability rate of more than 92% after 72 h. The ultrathin SiC membrane is promising for in vitro observations/imaging of bio-objects with an extremely short optical access.

Surface structures of L10-MnGa (001) by scanning tunneling microscopy and first-principles theory

NASA Astrophysics Data System (ADS)

Corbett, J. P.; Guerrero-Sanchez, J.; Richard, A. L.; Ingram, D. C.; Takeuchi, N.; Smith, A. R.

2017-11-01

We report on the surface reconstructions of L10-ordered MnGa (001) thin films grown by molecular beam epitaxy on a 50 nm Mn3N2 (001) layer freshly grown on a magnesium oxide (001) substrate. Scanning tunneling microscopy, Auger electron spectroscopy, and reflection high energy electron diffraction are combined with first-principles density functional theory calculations to determine the reconstructions of the L10-ordered MnGa (001) surface. We find two lowest energy reconstructions of the MnGa (001) face: a 1 × 1 Ga-terminated structure and a 1 × 2 structure with a Mn replacing a Ga in the 1 × 1 Ga-terminated surface. The 1 × 2 reconstruction forms a row structure along [100]. The manganese:gallium stoichiometry within the surface based on theoretical modeling is in good agreement with experiment. Magnetic moment calculations for the two lowest energy structures reveal important surface and bulk effects leading to oscillatory total magnetization for ultra-thin MnGa (001) films.

Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

NASA Astrophysics Data System (ADS)

Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

2018-05-01

Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

Charge dynamics of MgO single crystals subjected to KeV electron irradiation

NASA Astrophysics Data System (ADS)

Boughariou, A.; Blaise, G.; Braga, D.; Kallel, A.

2004-04-01

A scanning electron microscope has been equipped to study the fundamental aspects of charge trapping in insulating materials, by measuring the secondary electron emission (SEE) yield σ with a high precision (a few percent), as a function of energy, electron current density, and dose. The intrinsic secondary electron emission yield σ0 of uncharged MgO single crystals annealed at 1000 °C, 2 h, has been studied at four energies 1.1, 5, 15, and 30 keV on three different crystal orientations (100), (110), and (111). At low energies (1.1 and 5 keV) σ0 depends on the crystalline orientation wheras at high energies (30 keV) no differentiation occurs. It is shown that the value of the second crossover energy E2, for which the intrinsic SEE yield σ0=1, is extremely delicate to measure with precision. It is about 15 keV±500 eV for the (100) orientation, 13.5 keV±500 eV for the (110), and 18.5 keV±500 eV for the (111) one. At low current density J⩽105 pA/cm2, the variation of σ with the injected dose makes possible the observation of a self-regulated regime characterized by a steady value of the SEE yield σst=1. At low energies 1.1 and 5 keV, there is no current density effects in MgO, but at high energies ≈30 keV, apparent current density effects come from a bad collect of secondary electrons, due to very high negative surface potential. At 30 keV energy, an intense erratic electron exoemission was observed on the MgO (110) orientation annealed at 1500 °C. This phenomenon is the result of a disruptive process similar to flashover, which takes place at the surface of the material.

Ab initio molecular dynamics simulations of low energy recoil events in MgO

NASA Astrophysics Data System (ADS)

Petersen, B. A.; Liu, B.; Weber, W. J.; Zhang, Y.

2017-04-01

Low-energy recoil events in MgO are studied using ab intio molecular dynamics simulations to reveal the dynamic displacement processes and final defect configurations. Threshold displacement energies, Ed, are obtained for Mg and O along three low-index crystallographic directions, [100], [110], and [111]. The minimum values for Ed are found along the [110] direction consisting of the same element, either Mg or O atoms. Minimum threshold values of 29.5 eV for Mg and 25.5 eV for O, respectively, are suggested from the calculations. For other directions, the threshold energies are considerably higher, 65.5 and 150.0 eV for O along [111] and [100], and 122.5 eV for Mg along both [111] and [100] directions, respectively. These results show that the recoil events in MgO are partial-charge transfer assisted processes where the charge transfer plays an important role. There is a similar trend found in other oxide materials, where the threshold displacement energy correlates linearly with the peak partial-charge transfer, suggesting this behavior might be universal in ceramic oxides.

Ultrathin endoscope flexibility can predict discomfort associated with unsedated transnasal esophagogastroduodenoscopy

PubMed Central

Ono, Satoshi; Niimi, Keiko; Fujishiro, Mitsuhiro; Nakao, Tomoko; Suzuki, Kazushi; Ohike, Yumiko; Kodashima, Shinya; Yamamichi, Nobutake; Yamazaki, Tsutomu; Koike, Kazuhiko

2013-01-01

AIM: To evaluate the effects of choice of insertion route and ultrathin endoscope types. METHODS: This prospective study (January-June 2012) included 882 consecutive patients who underwent annual health checkups. Transnasal esophagogastroduodenoscopy (EGD) was performed in 503 patients and transoral EGD in 235 patients using six types of ultrathin endoscopes. Patients were given a choice of insertion route, either transoral or transnasal, prior to EGD examination. For transoral insertion, the endoscope was equipped with a thin-type mouthpiece and tongue depressor. Conscious sedation was not used for any patient. EGD-associated discomfort was assessed using a visual analog scale (VAS; no discomfort 0- maximum discomfort 10). RESULTS: Rates of preference for transnasal insertion were significantly higher in male (male/female 299/204 vs 118/117) and younger patients (56.8 ± 11.2 years vs 61.3 ± 13.0 years), although no significant difference was found in VAS scores between transoral and transnasal insertion (3.9 ± 2.3 vs 4.1 ± 2.5). Multivariate analysis revealed that gender, age, operator, and endoscope were independent significant predictors of VAS for transnasal insertion, although gender, age, and endoscope were those for transoral insertion. Further analysis revealed only the endoscopic flexibility index (EFI) as an independent significant predictor of VAS for transnasal insertion. Both EFI and tip diameter were independent significant predictors of VAS for transoral insertion. CONCLUSION: Flexibility of ultrathin endoscopes can be a predictor of EGD-associated discomfort, especially in transnasal insertion. PMID:23858379

Probing individual tunneling fluctuators with coherently controlled tunneling systems

NASA Astrophysics Data System (ADS)

Meißner, Saskia M.; Seiler, Arnold; Lisenfeld, Jürgen; Ustinov, Alexey V.; Weiss, Georg

2018-05-01

Josephson junctions made from aluminum and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin film AlOx contains atomic tunneling systems. Coherent tunneling systems may couple strongly to a qubit via their electric dipole moment, giving rise to spectral level repulsion. In addition, slowly fluctuating tunneling systems are observable when they are located close to coherent ones and distort their potentials. This interaction causes telegraphic switching of the coherent tunneling systems' energy splitting. Here, we measure such switching induced by individual fluctuators on timescales from hours to minutes using a superconducting qubit as a detector. Moreover, we extend the range of measurable switching times to millisecond scales by employing a highly sensitive single-photon qubit swap spectroscopy and statistical analysis of the measured qubit states.

Dynamic response of ultrathin highly dense ZIF-8 nanofilms.

PubMed

Cookney, Joanna; Ogieglo, Wojciech; Hrabanek, Pavel; Vankelecom, Ivo; Fila, Vlastimil; Benes, Nieck E

2014-10-11

Ultrathin ZIF-8 nanofilms are prepared by facile step-by-step dip coating. A critical withdrawal speed allows for films with a very uniform minimum thickness. The high refractive index of the films denotes the absence of mesopores. The dynamic response of the films to CO2 exposure resembles behaviour observed for non-equilibrium organic polymers.

Substrateless ultra-thin quarter meta-waveplate based on Babinet’s Principle

NASA Astrophysics Data System (ADS)

Loo, Y. L.; Guo, B. S.; Ong, C. K.

2018-06-01

This work proposes a substrateless ultrathin metamaterial for converting an incident electromagnetic (EM) wave from linear to a circular state of polarization within the frequency range of 10 to 14 GHz. Owing to the absence of a substrate, the polarization converter can realize a remarkable ultra-thin thickness of approximately 400 times smaller than the central working wavelength. In addition, simulated results demonstrate its capability of achieving a 3 dB axial ratio bandwidth of 34.5% at normal incidence and more than 25% for an oblique incidence angle up to 40°. The metamaterial experimental transmission coefficients for horizontal and vertical polarized EM fields show excellent agreement with the simulated results. The metasurface, which comprises of a self-complementary L-shaped structure, is designed based on Babinet’s principle, and fabricated using an advanced method for precise cutting of metal.

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Y., E-mail: yoshiaki.saito@toshiba.co.jp; Ishikawa, M.; Sugiyama, H.

2015-05-07

Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. Tomore » demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.« less

Ultra-thin microporous/hybrid materials

DOEpatents

Jiang, Ying-Bing [Albuquerque, NM; Cecchi, Joseph L [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM

2012-05-29

Ultra-thin hybrid and/or microporous materials and methods for their fabrication are provided. In one embodiment, the exemplary hybrid membranes can be formed including successive surface activation and reaction steps on a porous support that is patterned or non-patterned. The surface activation can be performed using remote plasma exposure to locally activate the exterior surfaces of porous support. Organic/inorganic hybrid precursors such as organometallic silane precursors can be condensed on the locally activated exterior surfaces, whereby ALD reactions can then take place between the condensed hybrid precursors and a reactant. Various embodiments can also include an intermittent replacement of ALD precursors during the membrane formation so as to enhance the hybrid molecular network of the membranes.

Nanocrystal ghosting: Extensive radiation damage in MgO induced by low-energy electrons

NASA Astrophysics Data System (ADS)

Frankenfield, Zackery; Kane, Kenneth; Sawyer, William H.

2017-03-01

We report direct evidence of extensive radiation damage in MgO nanocrystals due to intense bombardment (2 × 10 electrons/nm sec) by electrons with beam energies between 60 keV and 120 keV. Based upon a minimum intensity necessary to produce the observed damage, we present an explanation based on the Knotek-Feibelman process.

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Budde, Melanie; Tschammer, Carsten; Franz, Philipp; Feldl, Johannes; Ramsteiner, Manfred; Goldhahn, Rüdiger; Feneberg, Martin; Barsan, Nicolae; Oprea, Alexandru; Bierwagen, Oliver

2018-05-01

NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single crystalline growth with a cube-on-cube epitaxial relationship was confirmed by X-ray diffraction measurements for all used growth conditions and substrates except MgO(111). A detailed growth series on MgO(100) was prepared using substrate temperatures ranging from 20 °C to 900 °C to investigate the influence on the layer characteristics. Energy-dispersive X-ray spectroscopy indicated close-to-stoichiometric layers with an oxygen content of ≈ 47 at. % and ≈ 50 at. % grown under low and high O-flux, respectively. All NiO layers had a root-mean-square surface roughness below 1 nm, measured by atomic force microscopy, except for rougher layers grown at 900 °C or using molecular oxygen. Growth at 900 °C led to a significant diffusion of Mg from the substrate into the film. The relative intensity of the quasi-forbidden one-phonon Raman peak is introduced as a gauge of the crystal quality, indicating the highest layer quality for growth at low oxygen flux and high growth temperature, likely due to the resulting high adatom diffusion length during growth. The optical and electrical properties were investigated by spectroscopic ellipsometry and resistance measurements, respectively. All NiO layers were transparent with an optical bandgap around 3.6 eV and semi-insulating at room temperature. However, changes upon exposure to reducing or oxidizing gases of the resistance of a representative layer at elevated temperature were able to confirm p-type conductivity, highlighting their suitability as a model system for research on oxide-based gas sensing.

Defects and nanocluster engineering in MgO

NASA Astrophysics Data System (ADS)

Fedorov, A. V.; van Veen, A.; van Huis, M. A.; Schut, H.; Kooi, B. J.; De Hosson, J. Th.; Zimmerman, R. L.

2001-07-01

The optical properties of MgO crystals are known to change after introduction of nanosize metal precipitates. In this work the formation of metallic nanoclusters in the presence of nanosize rectangular shaped cavities was studied. The rectangular cavities were formed by 30 keV He+ implantation followed by 1273 K annealing. The formation of cavities and their location was established by Positron Beam Analysis (PBA). The rectangular shape and their alignment in (100) direction was observed by X-TEM. Subsequently, the samples were implanted with 600 keV Ag and 1000 keV Au in order to introduce the metal ions in the vicinity of the cavities. The samples were then annealed to provide the formation of nanoclusters. The evolution of the implantation induced defects was monitored by PBA. The optical properties were studied by light absorption measurements.

Antiferromagnetic exchange and magnetoresistance enhancement in ultrathin Co-Re sandwiches

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.

1992-10-01

Co-Re ultrathin sandwiches were prepared that show antiferromagnetic coupling and enhanced saturation magnetoresistance for Re spacer thicknesses below 9 Å. A field of 2.5 kOe is needed to saturate the antiferromagnetically coupled Co layers. These results are similar to those found in Co-Re superlattices.

Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

DTIC Science & Technology

2015-04-24

AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650...distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment.

PubMed

Kao, Chyuan-Haur; Chang, Chia Lung; Su, Wei Ming; Chen, Yu Tzu; Lu, Chien Cheng; Lee, Yu Shan; Hong, Chen Hao; Lin, Chan-Yu; Chen, Hsiang

2017-08-03

Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF 4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF 4 plasma treatment show promise for future industrial biosensing applications.

Melting temperatures of MgO under high pressure determined by micro-texture observation

NASA Astrophysics Data System (ADS)

Kimura, T.; Ohfuji, H.; Nishi, M.; Irifune, T.

2016-12-01

Periclase (MgO) is the second abundant mineral after bridgmanite in the Earth's lower mantle, and its melting temperature (Tm) under pressure is important to constrain the chemical composition of ultra-deep magma formed near the mantle-core boundary. However, the melting behavior is highly controversial among previous studies: a laser-heated diamond anvil cell (LHDAC) study reported a melting curve with a dTm/dP of 30 K/GPa at zero pressure [1], while several theoretical computations gave substantially higher dTm/dP of 90 100 K/GPa [2,3]. We performed a series of LHDAC experiments for measurements of Tm of MgO under high pressure, using single crystal MgO as the starting material. The melting was detected by using micro-texture observations of the quenched samples. We found that the laser-heated area of the sample quenched from the Tm in previous LHDAC experiments [1] showed randomly aggregated granular crystals, which was not caused by melting, but by plastic deformation of the sample. This suggests that the Tms of their study were substantially underestimated. On the other hand, the sample recovered from the temperature higher by 1500-1700 K than the Tms in previous LHDAC experiments showed a characteristic internal texture comparable to the solidification texture typically shown in metal casting. We determined the Tms based on the observation of this texture up to 32 GPa. Fitting our Tms to the Simon equation yields dTm/dP of 82 K/GPa at zero pressure, which is consistent with those of the theoretical predictions (90 100 K/GPa) [2,3]. Extrapolation of the present melting curve of MgO to the pressure of the CMB (135 GPa) gives a melting temperature of 8900 K. The present steep melting slope offers the eutectic composition close to peridotite (in terms of Mg/Si ratio) throughout the lower mantle conditions. According to the model for sink/float relationship between the solid mantle and the magma [4], a considerable amount of iron (Fe/(Mg+Fe) > 0.24) is expected

Recognition Tunneling

PubMed Central

Lindsay, Stuart; He, Jin; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel; Zhang, Peiming; Chang, Shuai; Huang, Shuo

2010-01-01

Single molecules in a tunnel junction can now be interrogated reliably using chemically-functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode (“tethered molecule-pair” configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the “free analyte” configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. PMID:20522930

Origin of the broad three-terminal Hanle signals in Fe/SiO{sub 2}/Si tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shoichi; Tanaka, Masaaki; Nakane, Ryosho

2015-07-20

Lorentzian-shaped broader three-terminal Hanle (B-3TH) signals are observed in Fe/SiO{sub 2}/Si tunnel junction devices at 6–300 K. We propose a spin conducting model, which explains all the characteristics of our experimental results, such as field angle dependence and bias dependence of the B-3TH signals, as well as experimental results reported by other groups. It was found that the shape of the B-3TH signals is determined by the spin depolarization at the Fe/SiO{sub 2} interface caused by local magnetic fields, unlike the conventional understanding. The shape of the B-3TH signals, including narrower and inverted Hanle signals, reflects the magnetic order of anmore » ultrathin paramagnetic layer formed at the Fe/SiO{sub 2} interface. Our model provides a unified explanation of the B-3TH signals observed in three-terminal Hanle measurements.« less

Soft Ultrathin Electronics Innervated Adaptive Fully Soft Robots.

PubMed

Wang, Chengjun; Sim, Kyoseung; Chen, Jin; Kim, Hojin; Rao, Zhoulyu; Li, Yuhang; Chen, Weiqiu; Song, Jizhou; Verduzco, Rafael; Yu, Cunjiang

2018-03-01

Soft robots outperform the conventional hard robots on significantly enhanced safety, adaptability, and complex motions. The development of fully soft robots, especially fully from smart soft materials to mimic soft animals, is still nascent. In addition, to date, existing soft robots cannot adapt themselves to the surrounding environment, i.e., sensing and adaptive motion or response, like animals. Here, compliant ultrathin sensing and actuating electronics innervated fully soft robots that can sense the environment and perform soft bodied crawling adaptively, mimicking an inchworm, are reported. The soft robots are constructed with actuators of open-mesh shaped ultrathin deformable heaters, sensors of single-crystal Si optoelectronic photodetectors, and thermally responsive artificial muscle of carbon-black-doped liquid-crystal elastomer (LCE-CB) nanocomposite. The results demonstrate that adaptive crawling locomotion can be realized through the conjugation of sensing and actuation, where the sensors sense the environment and actuators respond correspondingly to control the locomotion autonomously through regulating the deformation of LCE-CB bimorphs and the locomotion of the robots. The strategy of innervating soft sensing and actuating electronics with artificial muscles paves the way for the development of smart autonomous soft robots. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carpal Tunnel Syndrome

PubMed Central

Zimmerman, Gregory R.

1994-01-01

Carpal tunnel syndrome is a neuropathy resulting from compression of the median nerve as it passes through a narrow tunnel in the wrist on its way to the hand. The lack of precise objective and clinical tests, along with symptoms that are synonymous with other syndromes in the upper extremity, cause carpal tunnel syndrome to appear to be a rare entity in athletics. However, it should not be ruled out as a possible etiology of upper extremity paralysis in the athlete. More typically, carpal tunnel syndrome is the most common peripheral entrapment neuropathy encountered in industry. Treatment may include rest and/or splinting of the involved wrist, ice application, galvanic stimulation, or iontophoresis to reduce inflammation, and then transition to heat modalities and therapeutic exercises for developing flexibility, strength, and endurance. In addition, an ergonomic assessment should be conducted, resulting in modifications to accommodate the carpal tunnel syndrome patient. ImagesFig 3.Fig 4.Fig 5.Fig 6.Fig 7. PMID:16558255

Few-layered CoHPO4.3H2O ultrathin nanosheets for high performance of electrode materials for supercapacitors

NASA Astrophysics Data System (ADS)

Pang, Huan; Wang, Shaomei; Shao, Weifang; Zhao, Shanshan; Yan, Bo; Li, Xinran; Li, Sujuan; Chen, Jing; Du, Weimin

2013-06-01

Ultrathin cobalt phosphate (CoHPO4.3H2O) nanosheets are successfully synthesized by a one pot hydrothermal method. Novel CoHPO4.3H2O ultrathin nanosheets are assembled for constructing the electrodes of supercapacitors. Benefiting from the nanostructures, the as-prepared electrode shows a specific capacitance of 413 F g-1, and no obvious decay even after 3000 charge-discharge cycles. Such a quasi-two-dimensional material is a new kind of supercapacitor electrode material with high performance.Ultrathin cobalt phosphate (CoHPO4.3H2O) nanosheets are successfully synthesized by a one pot hydrothermal method. Novel CoHPO4.3H2O ultrathin nanosheets are assembled for constructing the electrodes of supercapacitors. Benefiting from the nanostructures, the as-prepared electrode shows a specific capacitance of 413 F g-1, and no obvious decay even after 3000 charge-discharge cycles. Such a quasi-two-dimensional material is a new kind of supercapacitor electrode material with high performance. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01460f

The cutting of ultrathin sections with the thickness less than 20 nm from biological specimens embedded in resin blocks.

PubMed

Nebesářová, Jana; Hozák, Pavel; Frank, Luděk; Štěpan, Petr; Vancová, Marie

2016-06-01

Low voltage electron microscopes working in transmission mode, like LVEM5 (Delong Instruments, Czech Republic) working at accelerating voltage 5 kV or scanning electron microscope working in transmission mode with accelerating voltage below 1 kV, require ultrathin sections with the thickness below 20 nm. Decreasing of the primary electron energy leads to enhancement of image contrast, which is especially useful in the case of biological samples composed of elements with low atomic numbers. As a result treatments with heavy metals, like post-fixation with osmium tetroxide or ultrathin section staining, can by omitted. The disadvantage is reduced penetration ability of incident electrons influencing the usable thickness of the specimen resulting in the need of ultrathin sections of under 20 nm thickness. In this study we want to answer basic questions concerning the cutting of extremely ultrathin sections: Is it possible routinely and reproducibly to cut extremely thin sections of biological specimens embedded in commonly used resins with contemporary ultramicrotome techniques and under what conditions? Microsc. Res. Tech. 79:512-517, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae

We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, canmore » have potential for diverse applications ranging from color display devices to the image sensors.« less

The Tunnels of Samos

NASA Technical Reports Server (NTRS)

Apostol, Tom M. (Editor)

1995-01-01

This 'Project Mathematics' series video from CalTech presents the tunnel of Samos, a famous underground aquaduct tunnel located near the capital of Pithagorion (named after the famed Greek mathematician, Pythagoras, who lived there), on one of the Greek islands. This tunnel was constructed around 600 BC by King Samos and was built under a nearby mountain. Through film footage and computer animation, the mathematical principles and concepts of why and how this aquaduct tunnel was built are explained.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jungdae; Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749; Nam, Hyoungdo

2015-09-15

We report on the design of a compact low temperature scanning tunneling microscope (STM) having in-situ sample preparation capability. The in-situ sample preparation chamber was designed to be compact allowing quick transfer of samples to the STM stage, which is ideal for preparing temperature sensitive samples such as ultra-thin metal films on semiconductor substrates. Conventional spring suspensions on the STM head often cause mechanical issues. To address this problem, we developed a simple vibration damper consisting of welded metal bellows and rubber pads. In addition, we developed a novel technique to ensure an ultra-high-vacuum (UHV) seal between the copper andmore » stainless steel, which provides excellent reliability for cryostats operating in UHV. The performance of the STM was tested from 2 K to 77 K by using epitaxial thin Pb films on Si. Very high mechanical stability was achieved with clear atomic resolution even when using cryostats operating at 77 K. At 2 K, a clean superconducting gap was observed, and the spectrum was easily fit using the BCS density of states with negligible broadening.« less

Fatigue resistance of ultrathin CAD/CAM complete crowns with a simplified cementation process.

PubMed

Magne, Pascal; Carvalho, Adriana O; Bruzi, Greciana; Giannini, Marcelo

2015-10-01

Traditional tooth preparation for complete crowns requires a substantial amount of hard tissue reduction. This is in contrast with the principles of minimally invasive dentistry. An ultrathin complete crown preparation is proposed instead. The purpose of this in vitro study was to assess the fatigue resistance and failure mode of computer-aided design and computer-aided manufacturing (CAD/CAM) ultrathin complete molar crowns placed with self-adhesive cement. Different restorative materials (resin nanoceramic [RNC], feldspathic ceramic [FEL], and lithium disilicate [LD]) were compared. Forty-five extracted molars with a standardized crown preparation were restored with the Cerec 3 CAD/CAM system using FEL, LD, or RNC (n=15). FEL and LD restorations were etched with hydrofluoric acid and silanated. RNC restorations and all preparations were treated with airborne-particle abrasion. All restorations (thickness=0.7 mm) were cemented with RelyX Unicem II Automix cement and submitted to cyclic isometric loading, beginning with a load of 200 N (5000 cycles) and followed by stages of 400, 600, 800, 1000, 1200, and 1400 N at a maximum of 30 000 cycles each. The specimens were loaded until failure or for a maximum of 185 000 cycles. The failure mode was categorized as "catastrophic," "possibly reparable," or "reparable." The groups were compared using life table survival analysis (log rank test at α=.05). Previously published data from the same authors about traditional complete crowns (thickness 1.5 mm) using the same experimental design were included for comparison. All specimens survived the fatigue test until the 600 N step. RNC, LD, and FEL failed at an average load of 1014 N (1 survival), 1123 N (2 survivals), and 987 N (no survivals), and no difference in survival rate was found. No catastrophic failures were reported after the fatigue test. Comparison with previously published data showed that 1.5-mm thick complete crowns demonstrated higher survival rates than

Interior of Tunnel No. 1356, Stick Pile Tunnel showing timber ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior of Tunnel No. 1356, Stick Pile Tunnel showing timber framing and missing posts, looking northeast. - Western Maryland Railway, Cumberland Extension, Pearre to North Branch, from WM milepost 125 to 160, Pearre, Washington County, MD

Dissolvable films of silk fibroin for ultrathin conformal bio-integrated electronics.

PubMed

Kim, Dae-Hyeong; Viventi, Jonathan; Amsden, Jason J; Xiao, Jianliang; Vigeland, Leif; Kim, Yun-Soung; Blanco, Justin A; Panilaitis, Bruce; Frechette, Eric S; Contreras, Diego; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Hwang, Keh-Chih; Zakin, Mitchell R; Litt, Brian; Rogers, John A

2010-06-01

Electronics that are capable of intimate, non-invasive integration with the soft, curvilinear surfaces of biological tissues offer important opportunities for diagnosing and treating disease and for improving brain/machine interfaces. This article describes a material strategy for a type of bio-interfaced system that relies on ultrathin electronics supported by bioresorbable substrates of silk fibroin. Mounting such devices on tissue and then allowing the silk to dissolve and resorb initiates a spontaneous, conformal wrapping process driven by capillary forces at the biotic/abiotic interface. Specialized mesh designs and ultrathin forms for the electronics ensure minimal stresses on the tissue and highly conformal coverage, even for complex curvilinear surfaces, as confirmed by experimental and theoretical studies. In vivo, neural mapping experiments on feline animal models illustrate one mode of use for this class of technology. These concepts provide new capabilities for implantable and surgical devices.

Dissolvable Films of Silk Fibroin for Ultrathin, Conformal Bio-Integrated Electronics

PubMed Central

Kim, Dae-Hyeong; Viventi, Jonathan; Amsden, Jason J.; Xiao, Jianliang; Vigeland, Leif; Kim, Yun-Soung; Blanco, Justin A.; Panilaitis, Bruce; Frechette, Eric S.; Contreras, Diego; Kaplan, David L.; Omenetto, Fiorenzo G.; Huang, Yonggang; Hwang, Keh-Chih; Zakin, Mitchell R.; Litt, Brian; Rogers, John A.

2011-01-01

Electronics that are capable of intimate, non-invasive integration with the soft, curvilinear surfaces of biological tissues offer important opportunities for diagnosing and treating disease and for improving brain-machine interfaces. This paper describes a material strategy for a type of bio-interfaced system that relies on ultrathin electronics supported by bioresorbable substrates of silk fibroin. Mounting such devices on tissue and then allowing the silk to dissolve and resorb initiates a spontaneous, conformal wrapping process driven by capillary forces at the biotic/abiotic interface. Specialized mesh designs and ultrathin forms for the electronics ensure minimal stresses on the tissue and highly conformal coverage, even for complex curvilinear surfaces, as confirmed by experimental and theoretical studies. In vivo, neural mapping experiments on feline animal models illustrate one mode of use for this class of technology. These concepts provide new capabilities for implantable or surgical devices. PMID:20400953

Dissolvable films of silk fibroin for ultrathin conformal bio-integrated electronics

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeong; Viventi, Jonathan; Amsden, Jason J.; Xiao, Jianliang; Vigeland, Leif; Kim, Yun-Soung; Blanco, Justin A.; Panilaitis, Bruce; Frechette, Eric S.; Contreras, Diego; Kaplan, David L.; Omenetto, Fiorenzo G.; Huang, Yonggang; Hwang, Keh-Chih; Zakin, Mitchell R.; Litt, Brian; Rogers, John A.

2010-06-01

Electronics that are capable of intimate, non-invasive integration with the soft, curvilinear surfaces of biological tissues offer important opportunities for diagnosing and treating disease and for improving brain/machine interfaces. This article describes a material strategy for a type of bio-interfaced system that relies on ultrathin electronics supported by bioresorbable substrates of silk fibroin. Mounting such devices on tissue and then allowing the silk to dissolve and resorb initiates a spontaneous, conformal wrapping process driven by capillary forces at the biotic/abiotic interface. Specialized mesh designs and ultrathin forms for the electronics ensure minimal stresses on the tissue and highly conformal coverage, even for complex curvilinear surfaces, as confirmed by experimental and theoretical studies. In vivo, neural mapping experiments on feline animal models illustrate one mode of use for this class of technology. These concepts provide new capabilities for implantable and surgical devices.

Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films

NASA Astrophysics Data System (ADS)

Mo, D. L.; Wang, W. B.; Cai, Q.

2016-08-01

In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction plays a dominant role. The Fermi level is found to be 81 meV above the Dirac point, and the carrier mobility can reach ~6030 cm2/(Vs) for the 10-nm film. When the film thickness decreases from 30 to 10 nm, the Fermi level will move 8 meV far from the bulk valence band. The coefficient α in the Hikami-Larkin-Nagaoka equation is shown to be ~0.5, manifesting that only the bottom surface of the Bi2Te3 ultrathin films takes part in transport conductions. These will pave the way for understanding thoroughly the surface transport properties of topological insulators.

Ultrathin spinel membrane-encapsulated layered lithium-rich cathode material for advanced Li-ion batteries.

PubMed

Wu, Feng; Li, Ning; Su, Yuefeng; Zhang, Linjing; Bao, Liying; Wang, Jing; Chen, Lai; Zheng, Yu; Dai, Liqin; Peng, Jingyuan; Chen, Shi

2014-06-11

Lack of high-performance cathode materials has become a technological bottleneck for the commercial development of advanced Li-ion batteries. We have proposed a biomimetic design and versatile synthesis of ultrathin spinel membrane-encapsulated layered lithium-rich cathode, a modification by nanocoating. The ultrathin spinel membrane is attributed to the superior high reversible capacity (over 290 mAh g(-1)), outstanding rate capability, and excellent cycling ability of this cathode, and even the stubborn illnesses of the layered lithium-rich cathode, such as voltage decay and thermal instability, are found to be relieved as well. This cathode is feasible to construct high-energy and high-power Li-ion batteries.

New possibilities for tuning ultrathin cobalt film magnetic properties by a noble metal overlayer.

PubMed

Kisielewski, M; Maziewski, A; Tekielak, M; Wawro, A; Baczewski, L T

2002-08-19

Complementary multiscale magneto-optical studies based on the polar Kerr effect are carried out on an ultrathin cobalt wedge covered with a silver wedge and subsequently with the Au thick layer. A few monolayers of Ag are found to have a substantial effect on magnetic anisotropy, the coercivity field, and Kerr rotation. The silver overlayer thickness-driven magnetic reorientation from easy axis to easy plane generates a new type of 90 degrees magnetic wall for cobalt thicknesses between 1.3 and 1.8 nm. The tuning of the wall width in a wide range is possible. Tailoring of the overlayer structure can be used for ultrathin film magnetic patterning.

Flexible Ultrathin Endoscope Integrated with Irrigation Suction Apparatus for Assisting Microneurosurgery.

PubMed

Otani, Naoki; Morimoto, Yuji; Fujii, Kazuya; Toyooka, Terushige; Wada, Kojiro; Mori, Kentaro

2017-12-01

Endoscopy can observe the anatomical components in a deeply located and/or hidden area during neurosurgical procedures under the operating microscope. We have newly developed a flexible ultrathin endoscope integrated with irrigation suction apparatus (FUEISA) to visualize deeply located and/or hidden areas for assisting microneurosurgery. The present study investigated the usefulness of the FUEISA system for direct clipping surgery of cerebral aneurysms. Twenty-one patients underwent microneurosurgery assisted with the FUEISA system for direct clipping of cerebral aneurysms. The flexible ultrathin endoscope (outer diameter 0.75mm) consists of an image guide (6000 dpi) and a light guide, integrated with the irrigation suction apparatus. This endoscopic system was inserted before and after clipping to observe the anatomical conditions surrounding the lesions. In all cases, handling and operation of the FUEISA was technically successful during the surgical procedure. The ultrathin endoscope was adequately integrated with the irrigation suction apparatus in all cases. General anatomy visualization including the lenticulostriate arteries, medial striate arteries, and/or internal carotid artery perforators was possible, and the correct clip positioning and vessel conditions were easily checked. The endoscope revealed that the clip had been positioned incorrectly in one case. No complications associated with the endoscopic system occurred. The FUEISA system can be applied with safe manipulation, which was remarkably useful for confirmation of the presence of perforators and cranial nerves behind the lesions, particularly anatomical components located in deep and/or hidden areas during clipping of cerebral aneurysms. Copyright © 2017 Elsevier Inc. All rights reserved.

Ultrathin SnO2 nanorods: template- and surfactant-free solution phase synthesis, growth mechanism, optical, gas-sensing, and surface adsorption properties.

PubMed

Xi, Guangcheng; Ye, Jinhua

2010-03-01

A novel template- and surfactant-free low temperature solution-phase method has been successfully developed for the controlled synthesis of ultrathin SnO(2) single-crystalline nanorods for the first time. The ultrathin SnO(2) single-crystalline nanorods are 2.0 +/- 0.5 nm in diameter, which is smaller than its exciton Bohr radius. The ultrathin SnO(2) nanorods show a high specific area (191.5 m(2) g(-1)). Such a thin SnO(2) single-crystalline nanorod is new in the family of SnO(2) nanostrucures and presents a strong quantum confinement effect. Its formation depends on the reaction temperature as well as on the concentration of the urea solution. A nonclassical crystallization process, Ostwald ripening process followed by an oriented attachment mechanism, is proposed based on the detailed observations from a time-dependent crystal evolution process. Importantly, such structured SnO(2) has shown a strong structure-induced enhancement of gas-sensing properties and has exhibited greatly enhanced gas-sensing property for the detection of ethanol than that of other structured SnO(2), such as the powders of nanobelts and microrods. Moreover, these ultrathin SnO(2) nanorods exhibit excellent ability to remove organic pollutant in wastewater by enormous surface adsorption. These properties are mainly attributed to its higher surface-to-volume ratio and ultrathin diameter. This work provides a novel low temperature, green, and inexpensive pathway to the synthesis of ultrathin nanorods, offering a new material form for sensors, solar cells, catalysts, water treatments, and other applications.

Evaluation of novel reactive MgO activated slag binder for the immobilisation of lead and zinc.

PubMed

Jin, Fei; Al-Tabbaa, Abir

2014-12-01

Although Portland cement is the most widely used binder in the stabilisation/solidification (S/S) processes, slag-based binders have gained significant attention recently due to their economic and environmental merits. In the present study, a novel binder, reactive MgO activated slag, is compared with hydrated lime activated slag in the immobilisation of lead and zinc. A series of lead or zinc-doped pastes and mortars were prepared with metal to binder ratio from 0.25% to 1%. The hydration products and microstructure were studied by X-ray diffraction, thermogravimetric analysis and scanning electron microscopy. The major hydration products were calcium silicate hydrate and hydrotalcite-like phases. The unconfined compressive strength was measured up to 160 d. Findings show that lead had a slight influence on the strength of MgO-slag paste while zinc reduced the strength significantly as its concentration increased. Leachate results using the TCLP tests revealed that the immobilisation degree was dependent on the pH and reactive MgO activated slag showed an increased pH buffering capacity, and thus improved the immobilisation efficiency compared to lime activated slag. It was proposed that zinc was mainly immobilised within the structure of the hydrotalcite-like phases or in the form of calcium zincate, while lead was primarily precipitated as the hydroxide. It is concluded, therefore, that reactive MgO activated slag can serve as clinker-free alternative binder in the S/S process. Copyright © 2014 Elsevier Ltd. All rights reserved.

Structural performance of ultra-thin whitetopping on Illinois roadways and parking lots.

DOT National Transportation Integrated Search

2014-08-01

A performance evaluation of ultra-thin whitetopping (UTW) pavements in Illinois was undertaken in 20122014 : to evaluate current design procedures and to determine design life criteria for future projects. The two main : components of this evaluat...

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Phenomenological in-situ TEM gas exposure studies of palladium particles on MgO at room temperature

NASA Technical Reports Server (NTRS)

Heinemann, K.; Poppa, H.; Osaka, T.

1983-01-01

It has been found that very small vapor-deposited catalytically active metal particles in the 1-2 nm size range on metal oxide substrates can undergo significant changes when they are exposed to gases such as oxygen or air, or even when allowed to 'anneal' at room temperature (RT) under vacuum conditions. The present investigation is concerned with continued in-situ gas exposures of as-deposited, 1 to 2 nm size palladium particles on MgO to air, oxygen, nitrogen, hydrogen, CO, and water vapor at RT. It is found that the low-pressure exposure to various gases at RT can significantly affect small palladium particles supported on MgO surfaces. Exposure to oxygen for 3 min at 0.0002 m bar produces a considerable amount of coalescence, flattening of the particles, and some distinct crystallographic particle shapes.

Thermodynamically complete equation of state of MgO from true radiative shock temperature measurements on samples preheated to 1850 K

NASA Astrophysics Data System (ADS)

Fat'yanov, O. V.; Asimow, P. D.; Ahrens, T. J.

2018-01-01

Plate impact experiments in the 100-250 GPa pressure range were done on a 〈100 〉 single-crystal MgO preheated before compression to 1850 K. Hot Mo(driver)-MgO targets were impacted with Mo or Ta flyers launched by the Caltech two-stage light-gas gun up to 7.5 km/s. Radiative temperatures and shock velocities were measured with 3%-4% and 1%-2% uncertainty, respectively, by a six-channel pyrometer with 3-ns time resolution, over a 500-900-nm spectral range. MgO shock front reflectivity was determined in additional experiments at 220 and 248 GPa using ≈50 /50 high-temperature sapphire beam splitters. Our measurements yield accurate experimental data on the mechanical, optical, and thermodynamic properties of B1 phase MgO from 102 GPa and 3900 K to 248 GPa and 9100 K, a region not sampled by previous studies. Reported Hugoniot data for MgO initially at ambient temperature, T =298 K, and the results of our current Hugoniot measurements on samples preheated to 1850 K were analyzed using the most general methods of least-squares fitting to constrain the Grüneisen model. This equation of state (EOS) was then used to construct maximum likelihood linear Hugoniots of MgO with initial temperatures from 298 to 2400 K. A parametrization of all EOS values and best-fit coefficients was done over the entire range of relevant particle velocities. Total uncertainties of all the EOS parameters and correlation coefficients for these uncertainties are also given. The predictive capabilities of our updated Mie-Grüneisen EOS were confirmed by (1) the good agreement between our Grüneisen data and five semiempirical γ (V ) models derived from porous shock data only or from combined static and shock data sets, (2) the very good agreement between our 1-bar Grüneisen values and γ (T ) at ambient pressure recalculated from reported experimental data on the adiabatic bulk modulus Ks(T ) , and (3) the good agreement of the brightness temperatures, corrected for shock reflectivity

View of entrance tunnel. Tunnel right to Control Center, left ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

View of entrance tunnel. Tunnel right to Control Center, left to Antenna Silos - Titan One Missile Complex 2A, .3 miles west of 129 Road and 1.5 miles north of County Line Road, Aurora, Adams County, CO

Single Electron Tunneling