In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta 1-x Al x N y Films for Cu Diffusion Barrier Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consiglio, S.; Dey, S.; Yu, K.

2016-01-01

Ultrathin TaN and Ta 1-xAl xN y films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3Si formation and determine the effective activation energy (E a) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (Tmore » c) for Cu silicidation. The Ea values of Cu 3Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the Ea of Cu 3Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase.« less

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

NASA Astrophysics Data System (ADS)

Niimi, Hiro; Khandelwal, Amit; Lamb, H. Henry; Lucovsky, Gerald

2002-01-01

Low-temperature nitridation of 3 nm SiO2 films using He/N2 and N2 remote radio frequency (rf) plasmas was investigated. On-line Auger electron spectroscopy and angle-resolved x-ray photoelectron spectroscopy (ARXPS) were employed to determine the concentration, spatial distribution, and local chemical bonding of nitrogen in the resultant films. Experiments were performed using a substrate temperature of 300 °C and 30 W rf power. Nitridation using an upstream He/N2 remote plasma at 0.1 Torr incorporates nitrogen at the top surface of the SiO2 film. In contrast, a lower concentration of nitrogen distributed throughout the film is obtained when the process pressure is increased to 0.3 Torr. ARXPS indicates a N-Si3 local bonding configuration, irrespective of the spatial distribution of N atoms. Slightly more nitrogen is incorporated using a downstream He/N2 plasma at each process pressure. By comparison, nitridation of SiO2 films using a N2 remote plasma at 0.1 Torr is very slow. Optical emission spectroscopy indicates that He dilution enhances the generation of N2+(B 2Σu+) species by altering the plasma electron energy distribution and by providing an additional kinetic pathway (Penning ionization). Changing the He/N2 remote plasma configuration from upstream to downstream (at 0.1 and 0.3 Torr) also enhances N2+(B 2Σu+) generation. For upstream He/N2 remote plasmas, the intensity of N2 first positive emission from N2(B 3Πg) states increases with pressure, whereas the N2+ first negative emission from N2+(B 2Σu+) states decreases. We infer from these observations that N2+ species are primarily responsible for top surface nitridation at 0.1 Torr, and that neutral species [N2(A 3Σu+) metastables and N atoms] are associated with sub-surface nitrogen incorporation.

New ultrathin film heterostructure for low-e application by sputtering technique: a theoretical and experimental study

NASA Astrophysics Data System (ADS)

Ruíz-Robles, M. A.; Abundiz-Cisneros, N.; Bender-Pérez, C. E.; Gutiérrez-Lazos, C. D.; Fundora-Cruz, A.; Solís-Pomar, F.; Pérez-Tijerina, E.

2018-03-01

The design and optical characterization by UV–vis transmittance of ultrathin low-emissivity (low-e) windows by reactive sputtering are reported. Two heterostructures on a glass substrate were considered for the low-e windows. The first heterostructure is Si3N4/TiO2/ZnO/Ag/SnO2/Si3N4 and the second is Si3N4/Ag/Si3N4. The transmittance and reflectance of these heterostructures were simulated to determine the required thickness of each layer. The first heterostructure exhibited maximum transmittance of 85% at 550 nm, slightly higher than the one determined by simulation and less than 50% transmittance in the near-infrared region (900 nm). The second heterostructure exhibited transmittance greater than 86% at 550 nm and <50% transmittance in the near-infrared region. In addition, we found that the bandwidth and maximum position of the transmittance depend on the Si3N4 layer thickness. Specifically, the thickness of the first Si3N4 layer allows the modulation of the transmittance bandwidth and the thickness of the second Si3N4 layer allows the modulation of the maximum position. The low-e windows were protected by the deposition of an ultrathin film of NiCr alloy (Ni 80%, Cr 20%) that preserved the optical characteristics and decreased the maximum of the transmittance only by 3%.

Preparation and characterization of the nanoporous ultrathin multilayer films based on molybdenum polyoxometalate (Mo 38) n

NASA Astrophysics Data System (ADS)

Wang, L.; Jiang, M.; Wang, E. B.; Duan, L. Y.; Hao, N.; Lan, Y.; Xu, L.; Li, Z.

2003-11-01

Ultrathin multilayer films of the wheel-shaped molybdenum polyoxometalate cluster (Mo 38) n and poly(allylamine hydrochloride)(PAH) have been prepared by the layer-by-layer (LbL) self-assembly method. The ((Mo 38) n/PAH) m multilayer films have been characterized by X-ray photoelectron spectra (XPS) and atomic force microscopy (AFM). UV-VIS measurements reveal regular film growth with each (Mo 38) n adsorption. The electrochemistry behavior of the film at room temperature was investigated.

Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Z Zhang; B Yang; Y Zhu

This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on themore » initial Pt fraction.« less

Magnetic and structural characterization of ultra-thin Fe (222) films

NASA Astrophysics Data System (ADS)

Loving, Melissa G.; Brown, Emily E.; Rizzo, Nicholas D.; Ambrose, Thomas F.

2018-05-01

Varied thickness body centered cubic (BCC) ultrathin Fe films (10-50Å) have been sputter deposited onto Si (111) substrates. BCC Fe with the novel (222) texture was obtained by H- terminating the Si (111) starting substrate then immediately depositing the magnetic films. Structural results derived from grazing incidence x-ray diffraction and x-ray reflectivity confirm the crystallographic texture, film thickness, and interface roughness. Magnetic results indicate that Fe (222) exhibits soft magnetic switching (easy axis), high anisotropy (hard axis), which is maintained across the thickness range, and a positive magnetostriction (for the thicker film layers). The observed soft magnetic switching in this system makes it an ideal candidate for future magnetic memory development as well as other microelectronics applications that utilize magnetic materials.

Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, X. Q., E-mail: xq-shen@aist.go.jp; Takahashi, T.; Ide, T.

2015-09-28

We investigate the generation mechanisms of micro-cracks (MCs) in an ultra-thin AlN/GaN superlattice (SL) structure grown on Si(110) substrates by metalorganic chemical vapor deposition. The SL is intended to be used as an interlayer (IL) for relaxing tensile stress and obtaining high-quality crack-free GaN grown on Si substrates. It is found that the MCs can be generated by two different mechanisms, where large mismatches of the lattice constant (LC) and the coefficient of thermal expansion (CTE) play key roles in the issue. Different MC configurations (low-density and high-density MCs) are observed, which are considered to be formed during the differentmore » growth stages (SL growth and cooling down processes) due to the LC and the CTE effects. In-situ and ex-situ experimental results support the mechanism interpretations of the MCs generation. The mechanism understanding makes it possible to optimize the SL IL structure for growing high-quality crack-free GaN films on Si substrates for optical and electronic device applications.« less

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Computational Study of In-Plane Phonon Transport in Si Thin Films

PubMed Central

Wang, Xinjiang; Huang, Baoling

2014-01-01

We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed. PMID:25228061

High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

NASA Astrophysics Data System (ADS)

Galanakis, I.

2015-03-01

Half-metallic Co2MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co2MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co2MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

PubMed

Wang, Ying; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-09-11

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

PubMed Central

Wang, Ying; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-01-01

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted. PMID:28788196

Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

NASA Astrophysics Data System (ADS)

Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

2017-04-01

Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

NASA Astrophysics Data System (ADS)

Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

2016-10-01

Due to the drawbacks of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, a new-type NEA GaN photocathodes with heterojunction surface dispense with Cs activation are proposed. This structure can be obtained through the coverage of an ultrathin n-type Si-doped GaN cap layer on the p-type Mg-doped GaN emission layer. The influences of the cap layer on the photocathode are calculated using DFT. This study indicates that the n-type cap layer can promote the photoemission characteristics of GaN photocathode and demonstrates the probability of the preparation of a NEA GaN photocathode with an n-type cap layer.

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

PubMed

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

Geometric structure of thin SiO xN y films on Si(100)

NASA Astrophysics Data System (ADS)

Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

1998-05-01

Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

NASA Astrophysics Data System (ADS)

Karpov, S. Y.; Zakheim, D. A.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Brunkov, P. N.; Lundina, E. Y.; Tsatsulnikov, A. F.

2018-02-01

In situ growth of an ultra-thin (up to 2.5 nm) Si3N4 film on the top of n-GaN is shown to reduce remarkably the height of the barrier formed by deposition of Ni-based Schottky contact. The reduction is interpreted in terms of polarization dipole induced at the Si3N4/n-GaN interface and Fermi level pinning at the Ni/Si3N4 interface. Detailed study of temperature-dependent current-voltage characteristics enables identification of the electron transport mechanism in such Schottky diodes under forward bias: thermal/field electron emission over the barrier formed in n-GaN followed by tunneling through the Si3N4 film. At reverse bias and room temperature, the charge transfer is likely controlled by Poole-Frenkel ionization of deep traps in n-GaN. Tunneling exponents at forward and reverse biases and the height of the Ni/Si3N4 Schottky barrier are evaluated experimentally and compared with theoretical predictions.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Structure Formation of Ultrathin PEO Films at Solid Interfaces—Complex Pattern Formation by Dewetting and Crystallization

PubMed Central

Braun, Hans-Georg; Meyer, Evelyn

2013-01-01

The direct contact of ultrathin polymer films with a solid substrate may result in thin film rupture caused by dewetting. With crystallisable polymers such as polyethyleneoxide (PEO), molecular self-assembly into partial ordered lamella structures is studied as an additional source of pattern formation. Morphological features in ultrathin PEO films (thickness < 10 nm) result from an interplay between dewetting patterns and diffusion limited growth pattern of ordered lamella growing within the dewetting areas. Besides structure formation of hydrophilic PEO molecules, n-alkylterminated (hydrophobic) PEO oligomers are investigated with respect to self-organization in ultrathin films. Morphological features characteristic for pure PEO are not changed by the presence of the n-alkylgroups. PMID:23385233

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

NASA Astrophysics Data System (ADS)

Sun, X.; Kolawa, E.; Im, S.; Garland, C.; Nicolet, M.-A.

Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700 °C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850 °C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

Controllable fabrication of ultrathin free-standing graphene films

PubMed Central

Chen, Jianyi; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Geng, Dechao; Liu, Hongtao; Wu, Bin; Yu, Gui; Hu, Wenping; Liu, Yunqi; Zhu, Daoben

2014-01-01

Graphene free-standing film-like or paper-like materials have attracted great attention due to their intriguing electronic, optical and mechanical properties and potential application in chemical filters, molecular storage and supercapacitors. Although significant progress has been made in fabricating graphene films or paper, there is still no effective method targeting ultrathin free-standing graphene films (UFGFs). Here, we present a modified filtration assembly method to prepare these ultrathin films. With this approach, we have fabricated a series of ultrathin free-standing graphene oxide films and UFGFs, up to 40 mm in diameter, with controllable thickness from micrometre to nanoscale (approx. 40 nm) dimensions. This method can be easily scaled up and the films display excellent optical, electrical and electrochemical properties. The ability to produce UFGFs from graphene oxide with a scalable, low-cost approach should take us a step closer to real-world applications of graphene. PMID:24615152

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Novel self-organization mechanism in ultrathin liquid films: theory and experiment.

PubMed

Trice, Justin; Favazza, Christopher; Thomas, Dennis; Garcia, Hernando; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2008-07-04

When an ultrathin metal film of thickness h (<20 nm) is melted by a nanosecond pulsed laser, the film temperature is a nonmonotonic function of h and achieves its maximum at a certain thickness h*. This is a consequence of the h and time dependence of energy absorption and heat flow. Linear stability analysis and nonlinear dynamical simulations that incorporate such intrinsic interfacial thermal gradients predict a characteristic pattern length scale Lambda that decreases for h>h*, in contrast to the classical spinodal dewetting behavior where Lambda increases monotonically as h2. These predictions agree well with experimental observations for Co and Fe films on SiO2.

Ultrathin Polymer Films, Patterned Arrays, and Microwells

NASA Astrophysics Data System (ADS)

Yan, Mingdi

2002-05-01

The ability to control and tailor the surface and interface properties of materials is important in microelectronics, cell growth control, and lab-on-a-chip devices. Modification of material surfaces with ultrathin polymer films is attractive due to the availability of a variety of polymers either commercially or by synthesis. We have developed two approaches to the attachment of ultrathin polymer films on solid substrates. In the first method, a silane-functionalized perfluorophenyl azide (PFPA-silane) was synthesized and used to covalently immobilize polymer thin films on silicon wafers. Silanization of the wafer surface with the PFPA-silane introduced a monolayer of azido groups which in turn covalently attached the polymer film by way of photochemically initiated insertion reactions. The thickness of the film could be adjusted by the type and the molecular weight of the polymer. The method is versatile due to the general C-H and/or N-H insertion reactions of crosslinker; and therefore, no specific reactive functional groups on the polymers are required. Using this method, a new type of microwell array was fabricated from covalently immobilized polymer thin films on flat substrates. The arrays were characterized with AFM, XPS, and TOF-SIMS. The second method describes the attachment of polymer thin films on solid substrates via UV irradiation. The procedure consisted of spin-coating a polymer film and irradiating the film with UV light. Following solvent extraction, a thin film remained. The thickness of the film, from a few to over a hundred nanometers, was controlled by varying solution concentration and the molecular weight of the polymer.

Biosensors Based on Ultrathin Film Composite Membranes

DTIC Science & Technology

1994-01-25

composite membranes should have a number C •’ of potential advantages including fast response time, simplicity of construction, and applicability to a number...The support membrane for the ultrathin film composite was an Anopore ( Alltech Associates) microporous alumina filter, these membranes are 55 Pm thick...constant 02 concentration in this solution. Finally, one of the most important potential advantage of a sensor based on an ultrathin film composite

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

NASA Astrophysics Data System (ADS)

Nagata, Masahiro; Shirahama, Ryouya; Duangchan, Sethavut; Baba, Akiyoshi

2018-06-01

We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO2 bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2 surface using various gases. We found that O2 plasma activation is more suitable for the bonding between SiO2 and Si than N2 or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2 surface was increased by O2 plasma activation. We fabricated the SOD substrate with an ultrathin (15 nm in thickness) SiO2 bonding layer using the sputter etching and O2 plasma activation methods.

Skyrmion morphology in ultrathin magnetic films

NASA Astrophysics Data System (ADS)

Gross, I.; Akhtar, W.; Hrabec, A.; Sampaio, J.; Martínez, L. J.; Chouaieb, S.; Shields, B. J.; Maletinsky, P.; Thiaville, A.; Rohart, S.; Jacques, V.

2018-02-01

Nitrogen-vacancy magnetic microscopy is employed in the quenching mode as a noninvasive, high-resolution tool to investigate the morphology of isolated skyrmions in ultrathin magnetic films. The skyrmion size and shape are found to be strongly affected by local pinning effects and magnetic field history. Micromagnetic simulations including a static disorder, based on the physical model of grain-to-grain thickness variations, reproduce all experimental observations and reveal the key role of disorder and magnetic history in the stabilization of skyrmions in ultrathin magnetic films. This work opens the way to an in-depth understanding of skyrmion dynamics in real, disordered media.

High-mobility ultrathin semiconducting films prepared by spin coating

NASA Astrophysics Data System (ADS)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

PubMed

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Injection doping of ultrathin microcrystalline silicon films prepared by CC-CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koynov, S.; Grebner, S.; Schwarz, R.

1997-07-01

Recently, the authors have proposed a cyclic method, referred to as Closed Chamber CVD (CC-CVD), for the preparation of {micro}c-Si films of high crystalline fraction at increased deposition rates. In this work, they first report new process conditions of CC-CVD, which result in growth of highly crystalline films with a sharp interface on a foreign substrate. Then these conditions are further used together with a pulsed injection of B{sub 2}H{sub 6} in an appropriate moment of each cycle, so that the disturbance of the crystallization process is prevented. A series of ultrathin {micro}c-Si films, doped by this technique, is characterizedmore » by conductivity measurements, SEM, Raman Scattering, optical transmission and UV reflection. A strong reduction of the transient interface layer is achieved and conductivity as high as 2 S/cm with an activation energy of 27 meV is reached.« less

A room temperature method for the formation of ultrathin silicon oxide films

NASA Astrophysics Data System (ADS)

Muisener, Richard John

Growing interest surrounds the use of thin films to impart unique surface properties without adversely affecting those of the bulk. One such example is the formation of a stable high-energy silicon oxide surface on polymers. Thin silicon oxide films have been used to tailor the surface properties of many materials. Conventional methods for SiOx film fabrication such as chemical vapor deposition require either high temperature or expensive vacuum chambers. This research focuses on the intrinsically inexpensive process of UV-ozone to form ultrathin SiOx films from polysiloxane precursors at room temperature and atmospheric pressure. Chemical evidence suggests a complete conversion from organic polymer to inorganic ceramic. Through XPS, the UV-ozone treatment oxidizes over 95% of the silicone's organic side groups with a resulting stoichiometry Of Si 1O2.2C0.08. The silicon oxidation state changes from 2+ in poly(dimethylsiloxane) to 93% 4+ corresponding to SiO2. IR studies show a total loss of methyl bands and the growth of a new Si-O band centered at 1225 cm-1. Gas phase reaction products suggest a radical driven process. The physical properties also suggest a complete conversion to SiO x. Excellent control of film thickness, as low as 2 nm, has been demonstrated by variable angle spectroscopic ellipsometry. The ellipsometrically determined thickness loss of 55% during treatment corresponds to an SiOx film density of 1.9 g/cm3. The continuity of the film is demonstrated by electrical properties and a very low water contact angle consistent with SiOx. The later property ensures that the SiOx films are anti-fogging in nature. Unique hydrophilic-hydrophobic structures were formed through photo-patterning. The reaction has been successfully modeled as self-limiting based on the diffusion of ozone. The chief reactant, atomic oxygen, is generated by the photochemical dissociation of ozone and quickly generates radical species within the polymer film. The reaction proceeds

Effect of structure on the tribology of ultrathin graphene and graphene oxide films.

PubMed

Chen, Hang; Filleter, Tobin

2015-03-27

The friction and wear properties of graphene and graphene oxide (GO) with varying C/O ratio were investigated using friction force microscopy. When applied as solid lubricants between a sliding contact of a silicon (Si) tip and a SiO2/Si substrate, graphene and ultrathin GO films (as thin as 1-2 atomic layers) were found to reduce friction by ∼6 times and ∼2 times respectively as compared to the unlubricated contact. The differences in measured friction were attributed to different interfacial shear strengths. Ultrathin films of GO with a low C/O ratio of ∼2 were found to wear easily under small normal load. The onset of wear, and the location of wear initiation, is attributed to differences in the local shear strength of the sliding interface as a result of the non-homogeneous surface structure of GO. While the exhibited low friction of GO as compared to SiO2 makes it an economically viable coating for micro/nano-electro-mechanical systems with the potential to extend the lifetime of devices, its higher propensity for wear may limit its usefulness. To address this limitation, the wear resistance of GO samples with a higher C/O ratio (∼4) was also studied. The higher C/O ratio GO was found to exhibit much improved wear resistance which approached that of the graphene samples. This demonstrates the potential of tailoring the structure of GO to achieve graphene-like tribological properties.

Real-Time Deposition Monitor for Ultrathin Conductive Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline

2011-01-01

A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a

Fabrication of Large-area Free-standing Ultrathin Polymer Films

PubMed Central

Stadermann, Michael; Baxamusa, Salmaan H.; Aracne-Ruddle, Chantel; Chea, Maverick; Li, Shuaili; Youngblood, Kelly; Suratwala, Tayyab

2015-01-01

This procedure describes a method for the fabrication of large-area and ultrathin free-standing polymer films. Typically, ultrathin films are prepared using either sacrificial layers, which may damage the film or affect its mechanical properties, or they are made on freshly cleaved mica, a substrate that is difficult to scale. Further, the size of ultrathin film is typically limited to a few square millimeters. In this method, we modify a surface with a polyelectrolyte that alters the strength of adhesion between polymer and deposition substrate. The polyelectrolyte can be shown to remain on the wafer using spectroscopy, and a treated wafer can be used to produce multiple films, indicating that at best minimal amounts of the polyelectrolyte are added to the film. The process has thus far been shown to be limited in scalability only by the size of the coating equipment, and is expected to be readily scalable to industrial processes. In this study, the protocol for making the solutions, preparing the deposition surface, and producing the films is described. PMID:26066738

Nucleation of C60 on ultrathin SiO2

NASA Astrophysics Data System (ADS)

Conrad, Brad; Groce, Michelle; Cullen, William; Pimpinelli, Alberto; Williams, Ellen; Einstein, Ted

2012-02-01

We utilize scanning tunneling microscopy to characterize the nucleation, growth, and morphology of C60 on ultrathin SiO2 grown at room temperature. C60 thin films are deposited in situ by physical vapor deposition with thicknesses varying from <0.05 to ˜1 ML. Island size and capture zone distributions are examined for a varied flux rate and substrate deposition temperature. The C60 critical nucleus size is observed to change between monomers and dimers non-monotonically from 300 K to 500 K. Results will be discussed in terms of recent capture zone studies and analysis methods. Relation to device fabrication will be discussed. doi:10.1016/j.susc.2011.08.020

High-mobility ultrathin semiconducting films prepared by spin coating.

PubMed

Mitzi, David B; Kosbar, Laura L; Murray, Conal E; Copel, Matthew; Afzali, Ali

2004-03-18

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (approximately 50 A), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS(2-x)Se(x) films, which exhibit n-type transport, large current densities (>10(5) A cm(-2)) and mobilities greater than 10 cm2 V(-1) s(-1)--an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au; Tao, Zhikuo

2015-03-02

The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high lightmore » trapping within amorphous silicon layer.« less

Integration of amorphous tantalum silicon nitride (TaSiN) films as diffusion barriers in a Cu/SiLK(TM) metallization scheme

NASA Astrophysics Data System (ADS)

Padiyar, Sumant Devdas

2003-09-01

Current and future performance requirements for high- speed integrated circuit (IC) devices have placed great emphasis on the introduction of novel materials, deposition techniques and improved metrology techniques. The introduction of copper interconnects and more currently low-k dielectric materials in IC fabrication are two such examples. This introduction necessitates research on the compatibility of these materials and process techniques with adjacent diffusion barrier materials. One candidate, which has attracted significant attention is tantalum-silicon-nitride (TaSiN) on account of its superior diffusion barrier performance and high recrystallization temperature1. The subject of this dissertation is an investigation of the integration compatibility and performance of TaSiN barrier layers with a low-k dielectric polymer (SiLK ®2). A plasma- enhanced chemical vapor deposition (PECVD) approach is taken for growth of TaSiN films in this work due to potential advantages in conformal film coverage compared to more conventional physical vapor deposition methods. A Design of Experiment (DOE) methodology was introduced for PECVD of TaSiN on SiLK to optimize film properties such as film composition, resistivity, growth rate and film roughness with respect to the predictors viz. substrate temperature, precursor gas flow and plasma power. The first pass study determined the response window for optimized TaSiN film composition, growth rate and low halide contamination and the compatibility of the process with an organic polymer substrate, i.e. SiLK. Second-pass studies were carried out to deposit ultra- thin (10nm) films on: (a)blanket SiLK to investigate the performance of TaSiN films against copper diffusion, and (b)patterned SiLK to evaluate step coverage and conformality. All TaSiN depositions were carried out on SiO2 substrates for baseline comparisons. A second purpose of the diffusion barrier in IC processing is to improve interfacial adhesion between the

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

DOE PAGES

Hilfiker, James N.; Stadermann, Michael; Sun, Jianing; ...

2016-08-27

It is a well-known challenge to determine refractive index (n) from ultra-thin films where the thickness is less than about 10 nm. In this paper, we discovered an interesting exception to this issue while characterizing spectroscopic ellipsometry (SE) data from isotropic, free-standing polymer films. Ellipsometry analysis shows that both thickness and refractive index can be independently determined for free-standing films as thin as 5 nm. Simulations further confirm an orthogonal separation between thickness and index effects on the experimental SE data. Effects of angle of incidence and wavelength on the data and sensitivity are discussed. Finally, while others have demonstratedmore » methods to determine refractive index from ultra-thin films, our analysis provides the first results to demonstrate high-sensitivity to the refractive index from ultra-thin layers.« less

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Synthesis and characterization of Ti-Si-C-N films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shtansky, D.V.; Levashov, E.A.; Sheveiko, A.N.

1999-09-01

This study represents one of the first attempts to deposit multicomponent (more than three components) thin films by magnetron sputtering of multiphase composite targets (three phases or even more). Films of Ti-Si-C-N were synthesized through dc magnetron sputtering of xTiC + yTi{sub 3}SiC{sub 2} + zA composite targets (A was TiSi{sub 2}, SiC, or a mixture of these phases) in an argon atmosphere or in a gaseous mixture of argon and nitrogen. The as-deposited films were characterized using Auger electron spectroscopy, X-ray diffraction, transmission electron microscopy using selected area electron diffraction and high-resolution techniques, and microhardness. It was shown thatmore » the substrate temperature and the nitrogen concentration in the reactive gas had a strong influence on the structure and the composition of the as-deposited films. Polycrystalline grains contained a high density of dislocations and exhibited a curved appearance of the lattice fringes that is probably due to the presence of the long-range stress fields. The measurements of the lattice parameters using the selected area electron diffraction pattern (SA EDP) method indicated, with a high probability, that the polycrystalline grains consist of clusters of atoms with varying compositions. The grain boundaries in the nanocrystalline Ti-Si-C-N films had both ordered and disordered regions, although some regions close to the interface exhibited neither a fully crystalline nor a homogeneously amorphous structure. The contribution of compressive stress as determined by an increase in the fcc lattice parameter is also discussed.« less

Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saravanan, K., E-mail: saravanan@igcar.gov.in; Jayalakshmi, G.; Krishnan, R.

We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influencemore » of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.« less

Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate

DOE PAGES

Yao, Liang-Zi; Crisostomo, Christian P.; Yeh, Chun-Chen; ...

2015-11-05

We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga, and Tl) with group V (N, P, As, Sb, and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs, and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN, and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One andmore » two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.« less

Simultaneous determination of the residual stress, elastic modulus, density and thickness of ultrathin film utilizing vibrating doubly clamped micro-/nanobeams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stachiv, Ivo, E-mail: stachiv@fzu.cz; Institute of Physics, Czech Academy of Sciences, Prague; Kuo, Chih-Yun

2016-04-15

Measurement of ultrathin film thickness and its basic properties can be highly challenging and time consuming due to necessity of using several very sophisticated devices. Here, we report an easy accessible resonant based method capable to simultaneously determinate the residual stress, elastic modulus, density and thickness of ultrathin film coated on doubly clamped micro-/nanobeam. We show that a general dependency of the resonant frequencies on the axial load is also valid for in-plane vibrations, and the one depends only on the considered vibrational mode. As a result, we found that the film elastic modulus, density and thickness can be evaluatedmore » from two measured in-plane and out-plane fundamental resonant frequencies of micro-/nanobeam with and without film under different prestress forces. Whereas, the residual stress can be determined from two out-plane (in-plane) measured consecutive resonant frequencies of beam with film under different prestress forces without necessity of knowing film and substrate properties and dimensions. Moreover, we also reveal that the common uncertainties in force (and thickness) determination have a negligible (and minor) impact on the determined film properties. The application potential of the present method is illustrated on the beam made of silicon and SiO{sub 2} with deposited 20 nm thick AlN and 40 nm thick Au thin films, respectively.« less

Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Jablonka, L.; Riekehr, L.; Zhang, Z.; Zhang, S.-L.; Kubart, T.

2018-01-01

Ultrathin Co films deposited on SiO2 with conductivities exceeding that of Cu are demonstrated. Ionized deposition implemented by high-power impulse magnetron sputtering (HiPIMS) is shown to result in smooth films with large grains and low resistivities, namely, 14 µΩ cm at a thickness of 40 nm, which is close to the bulk value of Co. Even at a thickness of only 6 nm, a resistivity of 35 µΩ cm is obtained. The improved film quality is attributed to a higher nucleation density in the Co-ion dominated plasma in HiPIMS. In particular, the pulsed nature of the Co flux as well as shallow ion implantation of Co into SiO2 can increase the nucleation density. Adatom diffusion is further enhanced in the ionized process, resulting in a dense microstructure. These results are in contrast to Co deposited by conventional direct current magnetron sputtering where the conductivity is reduced due to smaller grains, voids, rougher interfaces, and Ar incorporation. The resistivity of the HiPIMS films is shown to be in accordance with models by Mayadas-Shatzkes and Sondheimer which consider grain-boundary and surface-scattering.

Formation of crystalline heteroepitaxial SiC films on Si by carbonization of polyimide Langmuir-Blodgett films

NASA Astrophysics Data System (ADS)

Luchinin, Viktor V.; Goloudina, Svetlana I.; Pasyuta, Vyacheslav M.; Panov, Mikhail F.; Smirnov, Alexander N.; Kirilenko, Demid A.; Semenova, Tatyana F.; Sklizkova, Valentina P.; Gofman, Iosif V.; Svetlichnyi, Valentin M.; Kudryavtsev, Vladislav V.

2017-06-01

High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films were characterized by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD) analysis, Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). We demonstrated that the carbonization of a PI film on a Si substrate at 1000 °C leads to the formation of a carbon film and SiC nanocrystals on the Si substrate. It was found that five planes in the 3C-SiC(111) film are aligned with four Si(111) planes. As a result of repeated annealing of PI films containing 121 layers at 1200 °C crystalline SiC films were formed on the Si substrate. It was shown that the SiC films (35 nm) grown on Si(111) at 1200 °C have a mainly cubic 3C-SiC structure with small amount of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on the Si(100) substrate at the same temperature. It was shown that the SiC films (30-35 nm) can cover the voids with size up to 10 µm in the Si substrate. The current-voltage (I-V) characteristics of the n-Si/n-SiC heterostructure were obtained by conductive atomic force microscopy.

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film.

PubMed

Sun, Hao-Hua; Wang, Mei-Xiao; Zhu, Fengfeng; Wang, Guan-Yong; Ma, Hai-Yang; Xu, Zhu-An; Liao, Qing; Lu, Yunhao; Gao, Chun-Lei; Li, Yao-Yi; Liu, Canhua; Qian, Dong; Guan, Dandan; Jia, Jin-Feng

2017-05-10

Ultrathin freestanding bismuth film is theoretically predicted to be one kind of two-dimensional topological insulators. Experimentally, the topological nature of bismuth strongly depends on the situations of the Bi films. Film thickness and interaction with the substrate often change the topological properties of Bi films. Using angle-resolved photoemission spectroscopy, scanning tunneling microscopy or spectroscopy and first-principle calculation, the properties of Bi(111) ultrathin film grown on the NbSe 2 superconducting substrate have been studied. We find the band structures of the ultrathin film is quasi-freestanding, and one-dimensional edge state exists on Bi(111) film as thin as three bilayers. Superconductivity is also detected on different layers of the film and the pairing potential exhibits an exponential decay with the layer thicknesses. Thus, the topological edge state can coexist with superconductivity, which makes the system a promising platform for exploring Majorana Fermions.

Negative differential resistance in electron tunneling in ultrathin films near the two-dimensional limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batabyal, R.; Abdul Wasey, A. H. M.; Mahato, J. C.

We report on our observation of negative differential resistance (NDR) in electron tunneling conductance in atomic-scale ultrathin Ag films on Si(111) substrates. NDR was observed by scanning tunneling spectroscopy measurements. The tunneling conductance depends on the electronic local density of states (LDOS) of the sample. We show that the sample bias voltage, at which negative differential resistance and peak negative conductance occur, depends on the film thickness. This can be understood from the variation in the LDOS of the Ag films as a function of film thickness down to the two-dimensional limit of one atomic layer. First principles density functionalmore » theory calculations have been used to explain the results.« less

Effect of nanoconfinement on the sputter yield in ultrathin polymeric films: Experiments and model

NASA Astrophysics Data System (ADS)

Cristaudo, Vanina; Poleunis, Claude; Delcorte, Arnaud

2018-06-01

This fundamental contribution on secondary ion mass spectrometry (SIMS) polymer depth-profiling by large argon clusters investigates the dependence of the sputter yield volume (Y) on the thickness (d) of ultrathin films as a function of the substrate nature, i.e. hard vs soft. For this purpose, thin films of polystyrene (PS) oligomers (∼4,000 amu) are spin-coated, respectively, onto silicon and poly (methyl methacrylate) supports and, then, bombarded by 10 keV Ar3000+ ions. The investigated thickness ranges from 15 to 230 nm. Additionally, the influence of the polymer molecular weight on Y(d) for PS thin films on Si is explored. The sputtering efficiency is found to be strongly dependent on the overlayer thickness, only in the case of the silicon substrate. A simple phenomenological model is proposed for the description of the thickness influence on the sputtering yield. Molecular dynamics (MD) simulations conducted on amorphous films of polyethylene-like oligomers of increasing thickness (from 2 to 20 nm), under comparable cluster bombardment conditions, predict a significant increase of the sputtering yield for ultrathin layers on hard substrates, induced by energy confinement in the polymer, and support our phenomenological model.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

PubMed Central

Liu, Jianyi; Chen, Weijin; Wang, Biao; Zheng, Yue

2014-01-01

This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc.) that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads. PMID:28788198

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate

NASA Astrophysics Data System (ADS)

Hu, Bo; He, Wei; Ye, Jun; Tang, Jin; Syed Sheraz, Ahmad; Zhang, Xiang-Qun; Cheng, Zhao-Hua

2015-01-01

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films. In this paper, Co films with different thickness of CoSi2 buffer layers were grown on Si (001) substrates. In order to investigate morphology, structure, and magnetic properties of films, scanning tunneling microscope (STM), low energy electron diffraction (LEED), high resolution transmission electron microscopy (HRTEM), and surface magneto-optical Kerr effect (SMOKE) were used. The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of CoSi2 buffer layers. Few CoSi2 monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality. Furthermore, the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process, which is the typical phenomenon in cubic (001) films. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation of China (Grant Nos. 11374350, 11034004, 11274361, and 11274033), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005).

Molecular Imaging of Ultrathin Pentacene Films: Evidence for Homoepitaxy

NASA Astrophysics Data System (ADS)

Wu, Yanfei; Haugstad, Greg; Frisbie, C. Daniel

2013-03-01

Ultrathin polycrystalline films of organic semiconductors have received intensive investigations due to the critical role they play in governing the performance of organic thin film transistors. In this work, a variety of scanning probe microscopy (SPM) techniques have been employed to investigate ultrathin polycrystalline films (1-3 nm) of the benchmark organic semiconductor pentacene. By using spatially resolved Friction Force Microscopy (FFM), Kelvin Probe Force Microscopy (KFM) and Electrostatic Force Microscopy (EFM), an interesting multi-domain structure is revealed within the second layer of the films, characterized as two distinct friction and surface potential domains correlating with each other. The existence of multiple homoepitaxial modes within the films is thus proposed and examined. By employing lattice-revolved imaging using contact mode SPM, direct molecular evidence for the unusual homoepitaxy is obtained.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low-k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-04-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low-k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low-k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low-k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Acoustic Phonons and Mechanical Properties of Ultra-Thin Porous Low- k Films: A Surface Brillouin Scattering Study

NASA Astrophysics Data System (ADS)

Zizka, J.; King, S.; Every, A.; Sooryakumar, R.

2018-07-01

To reduce the RC (resistance-capacitance) time delay of interconnects, a key development of the past 20 years has been the introduction of porous low- k dielectrics to replace the traditional use of SiO2. Moreover, in keeping pace with concomitant reduction in technology nodes, these low- k materials have reached thicknesses below 100 nm wherein the porosity becomes a significant fraction of the film volume. The large degree of porosity not only reduces mechanical strength of the dielectric layer but also renders a need for non-destructive approaches to measure the mechanical properties of such ultra-thin films within device configurations. In this study, surface Brillouin scattering (SBS) is utilized to determine the elastic constants, Poisson's ratio, and Young's modulus of these porous low- k SiOC:H films (˜ 25-250 nm thick) grown on Si substrates by probing surface acoustic phonons and their dispersions.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment.

PubMed

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-15

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (10 19 cm -3 ) are distributed in the initial state, which exist in the forms of Si 2 N≡Si·, SiO 2 ≡Si·, O 3 ≡Si·, and N 3 ≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H + and O 2- . Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

NASA Astrophysics Data System (ADS)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

NASA Astrophysics Data System (ADS)

Liu, Guangyu; Wu, Liangcai; Song, Zhitang; Liu, Yan; Li, Tao; Zhang, Sifan; Song, Sannian; Feng, Songlin

2017-12-01

A memory cell composed of a selector device and a storage device is the basic unit of phase change memory. The threshold switching effect, main principle of selectors, is a universal phenomenon in chalcogenide glasses. In this work, we put forward a safe and controllable method to prepare a SiGeAsTeN chalcogenide film by implanting As ions into sputtered SiGeTeN films. For the SiGeAsTeN material, the phase structure maintains the amorphous state, even at high temperature, indicating that no phase transition occurs for this chalcogenide-based material. The electrical test results show that the SiGeAsTeN-based devices exhibit good threshold switching characteristics and the switching voltage decreases with the increasing As content. The decrease in valence alternation pairs, reducing trap state density, may be the physical mechanism for lower switch-on voltage, which makes the SiGeAsTeN material more applicable in selector devices through component optimization.

Ultrathin g-C3N4 films supported on Attapulgite nanofibers with enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Xu, Yongshuai; Zhang, Lili; Yin, Minghui; Xie, Dengyu; Chen, Jiaqi; Yin, Jingzhou; Fu, Yongsheng; Zhao, Pusu; Zhong, Hui; Zhao, Yijiang; Wang, Xin

2018-05-01

A novel visible-light-responsive photocatalyst is fabricated by introducing g-C3N4 ultrathin films onto the surface of attapulgite (ATP) via a simple in-situ depositing technique, in which ATP was pre-grafted using (3-Glycidyloxypropyl) trimethoxysilane (KH560) as the surfactant. A combination of XRD, FT-IR, BET, XPS, UV-vis, TEM and SEM techniques are utilized to characterize the composition, morphology and optical properties of the products. The results show that with the help of KH560, g-C3N4 presented as ultrathin layer is uniformly loaded onto the surface of ATP by forming a new chemical bond (Sisbnd Osbnd C). Comparing with g-C3N4 and ATP, ATP/g-C3N4 exhibits remarkably enhanced visible-light photocatalytic activity in degradation of methyl orange (MO) because of its high surface area, appropriate band gap and the synergistic effect between g-C3N4 and ATP. To achieve the best photocatalyst, the ratio of g-C3N4 was adjusted by controlling the mass portion between ATP-KH560 and melamine (r = m (ATP-KH560)/m (melamine)). The highest decomposition rate of methyl orange (MO) was 96.06% when r = 0.5 and this degradation efficiency remained unchanged after 4 cycles, which is 10 times as that of pure g-C3N4 particles. Possible photocatalytic mechanism is presented.

Microstructure and mechanical properties of Zr-Si-N films prepared by rf-reactive sputtering

NASA Astrophysics Data System (ADS)

Nose, M.; Chiou, W. A.; Zhou, M.; Mae, T.; Meshii, M.

2002-05-01

ZrN and ZrSiN films were prepared in an rf sputtering apparatus that has a pair of targets facing each other (referred to as the facing target-type rf sputtering). Films were deposited on silicon wafers without bias application or substrate heating in order to examine only the effect of silicon addition to the transition metal nitride films. The contents of zirconium, nitrogen, and silicon of the films were determined with an electron probe microanalyzer. The transmission electron microscopy studies were carried out in addition to x-ray diffraction. For the high resolution transmission electron microscopy observation, the field emission type transmission electron microscope was used, which provides a point-to-point resolution of 0.1 nm. The samples were observed both parallel and perpendicular to the film surface, which were plane and cross sectional views, respectively. In order to investigate the relationship between the mechanical properties and microstructure of films, the hardness was measured by a nanoindentation system at room temperature. The load was selected to keep the impression depth below 60 nm (not more than 5% of film thickness) so that the influence from the substrate can be neglected. The hardness of the films increases with small Si additions reaching the maximum value of 35 GPa at around 3 at. % Si. The tendency to grow columnar grains was strongest around this composition, while grains became equiaxial above 5 at. % of Si. The films containing 12.8% Si, which showed the lowest hardness of 18 GPa, consist of nanocrystal grains. The presence of ZrN nanocrystals embedded in Si3N4 was not observed in the present study. The hardening mechanism due to the addition of small amounts of Si in ZrN can not be determined at this time. The grain size and residual stress can make minor contributions to the hardening. A possibility of solid solution hardening due to atomistic strain, such as nitrogen atoms at interstitial sites or other point defects is

Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Pei; Zaslavsky, Alexander; Longo, Paolo

2016-01-07

Accurate optical methods are required to determine the energy bandgap of amorphous semiconductors and elucidate the role of quantum confinement in nanometer-scale, ultra-thin absorbing layers. Here, we provide a critical comparison between well-established methods that are generally employed to determine the optical bandgap of thin-film amorphous semiconductors, starting from normal-incidence reflectance and transmittance measurements. First, we demonstrate that a more accurate estimate of the optical bandgap can be achieved by using a multiple-reflection interference model. We show that this model generates more reliable results compared to the widely accepted single-pass absorption method. Second, we compare two most representative methods (Taucmore » and Cody plots) that are extensively used to determine the optical bandgap of thin-film amorphous semiconductors starting from the extracted absorption coefficient. Analysis of the experimental absorption data acquired for ultra-thin amorphous germanium (a-Ge) layers demonstrates that the Cody model is able to provide a less ambiguous energy bandgap value. Finally, we apply our proposed method to experimentally determine the optical bandgap of a-Ge/SiO{sub 2} superlattices with single and multiple a-Ge layers down to 2 nm thickness.« less

Metal Adatoms and Clusters on Ultrathin Zirconia Films

PubMed Central

2016-01-01

Nucleation and growth of transition metals on zirconia has been studied by scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. Since STM requires electrical conductivity, ultrathin ZrO2 films grown by oxidation of Pt3Zr(0001) and Pd3Zr(0001) were used as model systems. DFT studies were performed for single metal adatoms on supported ZrO2 films as well as the (1̅11) surface of monoclinic ZrO2. STM shows decreasing cluster size, indicative of increasing metal–oxide interaction, in the sequence Ag < Pd ≈ Au < Ni ≈ Fe. Ag and Pd nucleate mostly at steps and domain boundaries of ZrO2/Pt3Zr(0001) and form three-dimensional clusters. Deposition of low coverages of Ni and Fe at room temperature leads to a high density of few-atom clusters on the oxide terraces. Weak bonding of Ag to the oxide is demonstrated by removing Ag clusters with the STM tip. DFT calculations for single adatoms show that the metal–oxide interaction strength increases in the sequence Ag < Au < Pd < Ni on monoclinic ZrO2, and Ag ≈ Au < Pd < Ni on the supported ultrathin ZrO2 film. With the exception of Au, metal nucleation and growth on ultrathin zirconia films follow the usual rules: More reactive (more electropositive) metals result in a higher cluster density and wet the surface more strongly than more noble metals. These bind mainly to the oxygen anions of the oxide. Au is an exception because it can bind strongly to the Zr cations. Au diffusion may be impeded by changing its charge state between −1 and +1. We discuss differences between the supported ultrathin zirconia films and the surfaces of bulk ZrO2, such as the possibility of charge transfer to the substrate of the films. Due to their large in-plane lattice constant and the variety of adsorption sites, ZrO2{111} surfaces are more reactive than many other oxygen-terminated oxide surfaces. PMID:27213024

Suppression of superconductivity in epitaxial MgB2 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Chen; Wang, Yue; Wang, Da; Zhang, Yan; Liu, Zheng-Hao; Feng, Qing-Rong; Gan, Zi-Zhao

2013-07-01

MgB2 ultrathin films have potential to make sensitive superconducting devices such as superconducting single-photon detectors working at relatively high temperatures. We have grown epitaxial MgB2 films in thicknesses ranging from about 40 nm to 6 nm by using the hybrid physical-chemical vapor deposition method and performed electrical transport measurements to study the thickness dependence of the superconducting critical temperature Tc. With reducing film thickness d, although a weak depression of the Tc has been observed, which could be attributed to an increase of disorder (interband impurity scattering) in the film, the Tc retains close to the bulk value of MgB2 (39 K), being about 35 K in the film of 6 nm thick. We show that this result, beneficial to the application of MgB2 ultrathin films and in accordance with recent theoretical calculations, is in contrast to previous findings in MgB2 films prepared by other methods such as co-evaporation and molecular-beam epitaxy, where a severe Tc suppression has been observed with Tc about one third of the bulk value in films of ˜5 nm thick. We discuss this apparent discrepancy in experiments and suggest that, towards the ultrathin limit, the different degrees of Tc suppression displayed in currently obtained MgB2 films by various techniques may arise from the different levels of disorder present in the film or different extents of proximity effect at the film surface or film-substrate interface.

Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

NASA Astrophysics Data System (ADS)

Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

2018-05-01

GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

PubMed

Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

2017-10-06

Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

Influence of hysteresis effect on properties of reactively sputtered TiAlSiN films

NASA Astrophysics Data System (ADS)

Gao, Fangyuan; Li, Guang; Xia, Yuan

2018-02-01

This article reports on the hysteresis effect in TiAlSiN films prepared by an intermediate frequency magnetron. The discharge voltages for different metallic alloy targets varying with nitrogen flow rate were systematically investigated, under a constant pressure provided by sputtering gas. The hysteresis transition was introduced by the sudden changes in sputtering rate, fraction of compound formation, phase composition and mechanical properties. The result was shown that: the initial growth rate aD in metallic mode was 4 times faster than that in supersaturated state. The optimized stoichiometric TiAl(Si)Nx=1 films containing 50 at.% N were founded in the transition region. The discussion on the plasma characteristics caused by hysteresis process showed that the TiN(111) texture could be increased by applying higher particle bombarding energy. The hardness of TiAlSiN film was strongly influenced by the orientation, which depended on the loading history of nitrogen. The superior TiAlSiN film with hardness 33 GPa could be prepared during the nitrogen unloading for same nitrogen flow rates.

Quantitative Analysis of Etching Rate Profiles for 11B+-Implanted Si3N4 Film

NASA Astrophysics Data System (ADS)

Nakata, Jyoji; Kajiyama, Kenji

1983-01-01

Etching rate enhancement for 11B+-implanted Si3N4 film was investigated both experimentally and theoretically. The etching solution was concentrated H3PO4 at ˜165°C Film thicknesses were precisely measured by ellipsometry. Enhancement resulted from Si-N bond breaking. This was confirmed by a decrease of infrared absorption at a 12.0 μm wavelength for Si-N bond vibration. Main and additional peaks were observed in the etching rate profile. The former was due to nuclear damage and was well represented by the calculated etching rate profile deduced from the nuclear deposited energy density distribution. The latter existed in the surface region only when the ion projected range was shorter than the film thickness. This peak was possibly caused by charge accumulation in the insulating Si3N4 film during 11B+ implantation.

Thickness and composition of ultrathin SiO2 layers on Si

NASA Astrophysics Data System (ADS)

van der Marel, C.; Verheijen, M. A.; Tamminga, Y.; Pijnenburg, R. H. W.; Tombros, N.; Cubaynes, F.

2004-07-01

Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO2 layers (d) was determined from the XPS results using three different approaches: the ``standard'' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the ``standard'' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO2 decreased. This effect may be related to interface states of oxygen, which have been

Ultrathin nanofibrous films prepared from cadmium hydroxide nanostrands and anionic surfactants.

PubMed

Peng, Xinsheng; Karan, Santanu; Ichinose, Izumi

2009-08-04

We developed a simple fabrication method of ultrathin nanofibrous films from the dispersion of cadmium hydroxide nanostrands and anionic surfactants. The nanostrands were prepared in a dilute aqueous solution of cadmium chloride by using 2-aminoethanol. They were highly positively charged and gave bundlelike fibers upon mixing an aqueous solution of anionic surfactant. The nanostrand/surfactant composite fibers were filtered on an inorganic membrane filter. The resultant nanofibrous film was very uniform in the area of a few centimeters square when the thickness was not less than 60 nm. The films obtained with sodium tetradecyl sulfate (STS) had a composition close to the electroneutral complex, [Cd37(OH)68(H2O)n] x 6(STS), as confirmed by energy dispersive X-ray analysis. They were water-repellent with a contact angle of 117 degrees, and the value slightly decreased with the alkyl chain length of anionic surfactants. Ultrathin nanofibrous films were stable enough to be used for ultrafiltration at pressure difference of 90 kPa. We could effectively separate Au nanoparticles of 40 nm at an extremely high filtration rate of 14000 L/(h m2 bar).

Enhanced Hydrogen Transport over Palladium Ultrathin Films through Surface Nanostructure Engineering.

PubMed

Abate, Salvatore; Giorgianni, Gianfranco; Gentiluomo, Serena; Centi, Gabriele; Perathoner, Siglinda

2015-11-01

Palladium ultrathin films (around 2 μm) with different surface nanostructures are characterized by TEM, SEM, AFM, and temperature programmed reduction (TPR), and evaluated in terms of H2 permeability and H2-N2 separation. A change in the characteristics of Pd seeds by controlled oxidation-reduction treatments produces films with the same thickness, but different surface and bulk nanostructure. In particular, the films have finer and more homogeneous Pd grains, which results in lower surface roughness. Although all samples show high permeo-selectivity to H2 , the samples with finer grains exhibit enhanced permeance and lower activation energy for H2 transport. The analysis of the data suggests that grain boundaries between the Pd grains at the surface favor H2 transfer from surface to subsurface. Thus, the surface nanostructure plays a relevant role in enhancing the transport of H2 over the Pd ultrathin film, which is an important aspect to develop improved membranes that function at low temperatures and toward new integrated process architectures in H2 and syngas production with enhanced sustainability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Physicochemically functional ultrathin films by interfacial polymerization

DOEpatents

Lonsdale, Harold K.; Babcock, Walter C.; Friensen, Dwayne T.; Smith, Kelly L.; Johnson, Bruce M.; Wamser, Carl C.

1990-01-01

Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclsoed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers.

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

NASA Astrophysics Data System (ADS)

Tanner, Carey M.; Toney, Michael F.; Lu, Jun; Blom, Hans-Olof; Sawkar-Mathur, Monica; Tafesse, Melat A.; Chang, Jane P.

2007-11-01

The formation of epitaxial γ-Al2O3 thin films on 4H-SiC was found to be strongly dependent on the film thickness. An abrupt interface was observed in films up to 200 Å thick with an epitaxial relationship of γ-Al2O3(111)‖4H-SiC(0001) and γ-Al2O3(44¯0)‖4H-SiC(112¯0). The in-plane alignment between the film and the substrate is nearly complete for γ-Al2O3 films up to 115 Å thick, but quickly diminishes in thicker films. The films are found to be slightly strained laterally in tension; the strain increases with thickness and then decreases in films thicker than 200 Å, indicating strain relaxation which is accompanied by increased misorientation. By controlling the structure of ultrathin Al2O3 films, metal-oxide-semiconductor capacitors with Al2O3 gate dielectrics on 4H-SiC were found to have a very low leakage current density, suggesting suitability of Al2O3 for SiC device integration.

Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

DOE PAGES

Peer, Akshit; Biswas, Rana

2016-02-01

In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller thanmore » the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.« less

Physicochemically functional ultrathin films by interfacial polymerization

DOEpatents

Lonsdale, H.K.; Babcock, W.C.; Friensen, D.T.; Smith, K.L.; Johnson, B.M.; Wamser, C.C.

1990-08-14

Interfacially-polymerized ultrathin films containing physicochemically functional groups are disclosed, both with and without supports. Various applications are disclosed, including membrane electrodes, selective membranes and sorbents, biocompatible materials, targeted drug delivery, and narrow band optical absorbers. 3 figs.

Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces

NASA Astrophysics Data System (ADS)

Yalamarthy, Ananth Saran; So, Hongyun; Senesky, Debbie G.

2017-07-01

In this letter, we demonstrate an engineering strategy to boost thermoelectric power factor via geometry-induced properties of the pyramid structure. Aluminum gallium nitride (AlGaN)/GaN heterostructured films grown on inverted pyramidal silicon (Si) demonstrate higher power factor as compared to those grown on conventional flat Si substrates. We found that the magnitude of the Seebeck coefficient at room temperature increased from approximately 297 μVK-1 for the flat film to approximately 849 μVK-1 for the film on inverted pyramidal Si. In addition, the "effective" electrical conductivity of the AlGaN/GaN on the inverted pyramidal structure increased compared to the flat structure, generating an enhancement of thermoelectric power factor. The results demonstrate how manipulation of geometry can be used to achieve better thermoelectric characteristics in a manner that could be scaled to a variety of different material platforms.

Fabrication of Si3N4 thin films on phynox alloy substrates for electronic applications

NASA Astrophysics Data System (ADS)

Shankernath, V.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Padmanabhan, K. A.

2018-04-01

Thin films of Si3N4 are deposited on Phynox alloy substrates using radio frequency magnetron sputtering. The thickness of the films was varied between 80-150 nm by increasing the duration of deposition from 1 to 3 h at a fixed power density and working pressure. X-ray diffraction patterns reveal that the Si3N4 films had crystallized inspite of the substrates not being heated during deposition. This was confirmed using selected area electron diffraction and high resolution transmission electron microscopy also. It is postulated that a low lattice misfit between Si3N4 and Phynox provides energetically favourable conditions for ambient temperature crystallization. The hardness of the films is of the order of 6 to 9 GPa.

Mixed-Penetrant Sorption in Ultrathin Films of Polymer of Intrinsic Microporosity PIM-1.

PubMed

Ogieglo, Wojciech; Furchner, Andreas; Ghanem, Bader; Ma, Xiaohua; Pinnau, Ingo; Wessling, Matthias

2017-11-02

Mixed-penetrant sorption into ultrathin films of a superglassy polymer of intrinsic microporosity (PIM-1) was studied for the first time by using interference-enhanced in situ spectroscopic ellipsometry. PIM-1 swelling and the concurrent changes in its refractive index were determined in ultrathin (12-14 nm) films exposed to pure and mixed penetrants. The penetrants included water, n-hexane, and ethanol and were chosen on the basis of their significantly different penetrant-penetrant and penetrant-polymer affinities. This allowed studying microporous polymer responses at diverse ternary compositions and revealed effects such as competition for the sorption sites (for water/n-hexane or ethanol/n-hexane) or enhancement in sorption of typically weakly sorbing water in the presence of more highly sorbing ethanol. The results reveal details of the mutual sorption effects which often complicate comprehension of glassy polymers' behavior in applications such as high-performance membranes, adsorbents, or catalysts. Mixed-penetrant effects are typically very challenging to study directly, and their understanding is necessary owing to a broadly recognized inadequacy of simple extrapolations from measurements in a pure component environment.

Formation and investigation of ultrathin layers of Co2FeSi ferromagnetic alloy synthesized on silicon covered with a CaF2 barrier layer

NASA Astrophysics Data System (ADS)

Grebenyuk, G. S.; Gomoyunova, M. V.; Pronin, I. I.; Vyalikh, D. V.; Molodtsov, S. L.

2016-03-01

Ultrathin (∼2 nm) films of Co2FeSi ferromagnetic alloy were formed on silicon by solid-phase epitaxy and studied in situ. Experiments were carried out in an ultrahigh vacuum (UHV) using substrates of Si(1 1 1) single crystals covered with a 5 nm thick CaF2 barrier layer. The elemental and phase composition as well as the magnetic properties of the synthesized films were analyzed by photoelectron spectroscopy using synchrotron radiation and by magnetic linear dichroism in photoemission of Fe 3p and Co 3p electrons. The study shows that the synthesis of the Co2FeSi ferromagnetic alloy occurs in the temperature range of 200-400 °C. At higher temperatures, the films become island-like and lose their ferromagnetic properties, as the CaF2 barrier layer is unable to prevent a mass transfer between the film and the Si substrate, which violates the stoichiometry of the alloy.

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Synthesis of composite TiN/Ni3N/a-Si3N4 thin films using the plasma focus device

NASA Astrophysics Data System (ADS)

Adeel Umar, Zeshan; Ahmad, Riaz; Khan, Ijaz Ahmad; Hussain, Tousif; Hussnain, Ali; Khalid, Nida; Awais, Ali; Ali, T.

2013-12-01

Composite films of TiN/Ni3N/a-Si3N4 were synthesized using the Mather-type plasma focus device with varying numbers of focus deposition shots (5, 15, and 25) at 0° and 10° angular positions. The composition and structural analysis of these films were analyzed by using Rutherford backscattering (RBS) and X-ray diffraction (XRD). Scanning electron microscope and atomic force microscope were used to study the surface morphology of films. XRD patterns confirm the formation of composite TiN/Ni3N/a-Si3N4 films. The crystallite size of TiN (200) plane is 11 and 22 nm, respectively, at 0° and 10° angular positions for same 25 focus deposition shots. Impurity levels and thickness were measured using RBS. Scanning electron microscopy results show the formation of net-like structures for multiple focus shots (5, 15, and 25) at angular positions of 0° and 10°. The average surface roughness of the deposited films increases with increasing focus shots. The roughness of the film decreases at higher angle 10° and the films obtained are smoother as compared with the films deposited at 0° angular positions.

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

PubMed

Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

2016-06-28

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Bias current dependence of resistivity in Co0.4Fe0.4B0.2 ultrathin film prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Mandal, Snehal; Mazumdar, Dipak; Das, I.

2018-04-01

Ultrathin film of Co0.4Fe0.4B0.2 was prepared on p-type Si (100) substrate by RF magnetron sputtering. X-Ray Reflectivity and Atomic Force Microscopy measurements were performed to estimate the thickness and surface roughness of the film. Electrical transport measurements were performed by four-probe method in a current-in-plane (CIP) geometry. Presence of non-linearity in the current-voltage (I-V) characteristics was observed at higher current range. The electrical resistivity was found to change by several orders of magnitude (105) by changing the bias current from nano-ampere (nA) to milli-ampere (mA) range. This bias current dependence of the resistivity has been explained by different transport mechanisms.

The effect of nitrogen on the cycling performance in thin-film Si{sub 1-x}N{sub x} anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Donggi; Kim, Chunjoong; Lee, Joon-Gon

2008-09-15

The effects of nitrogen on the electrochemical properties of silicon-nitrogen (Si{sub 1-x}N{sub x}) thin films were examined in terms of their initial capacities and cycling properties. In particular, Si{sub 0.76}N{sub 0.24} thin films showed negligible initial capacity but an abrupt capacity increase to {approx}2300 mA h/g after {approx}650 cycles. The capacity of pure Si thin films was deteriorated to {approx}20% of the initial level after 200 cycles between 0.02 and 1.2 V at 0.5 C (1 C=4200 mA/g), whereas the Si{sub 0.76}N{sub 0.24} thin films exhibited excellent cycle-life performance after {approx}650 cycles. In addition, the Si{sub 0.76}N{sub 0.24} thin filmsmore » at 50 deg. C showed an abrupt capacity increase at an earlier stage of only {approx}30 cycles. The abnormal electrochemical behaviors in the Si{sub 0.76}N{sub 0.24} thin films were demonstrated to be correlated with the formation of Li{sub 3}N and Si{sub 3}N{sub 4}. - Graphical abstract: The Si{sub 0.76}N{sub 0.24} thin films showed negligible initial capacity, but an abrupt capacity increase to {approx}2300 mA h/g after {approx}650 cycles, followed by excellent cycle-life performance. This abnormal electrochemical behavior was demonstrated to be correlated with the formation of Li{sub 3}N and Si{sub 3}N{sub 4}.« less

Investigations of Topological Surface States in Sb (111) Ultrathin Films by STM/STS Experiments and DFT Calculations

NASA Astrophysics Data System (ADS)

Luo, Ziyu; Yao, Guanggeng; Xu, Wentao; Feng, Yuanping; Wang, Xue-Sen

2014-03-01

Bulk Sb was regarded as a semimetal with a nontrivial topological order. It is worth exploring whether the Sb ultrathin film has the potential to be an elementary topological insulator. In the presence of quantum confinement effect, we investigated the evolution of topological surface states in Sb (111) ultrathin films with different thickness by the scanning tunneling microscopy/ spectroscopy (STM/STS) experiments and density functional theory (DFT) calculations. By comparing the quasiparticle interference (QPI) patterns obtained from Fourier-transform scanning tunneling spectroscopy (FT-STS) and from DFT calculations, we successfully derive the spin properties of topological surface states on Sb (111) ultrathin films. In addition, based on the DFT calculations, the 8BL Sb (111) ultrathin film was proved to possess up to 30% spinseparated topological surface states within the bandgap. Therefore, the highquality 8BL Sb (111) ultrathin film could be regarded as an elementary topological insulator.

Magnetic Phase Transition in Ion-Irradiated Ultrathin CoN Films via Magneto-Optic Faraday Effect.

PubMed

Su, Chiung-Wu; Chang, Yen-Chu; Chang, Sheng-Chi

2013-11-15

The magnetic properties of 1 nm thick in-plane anisotropic Co ultrathin film on ZnO(0001) were investigated through successive 500 eV nitrogen-ion sputtering. Magneto-optical Faraday effects were used to observe the evolution of the ion-irradiated sample in longitudinal and perpendicular magnetic fields. The ferromagnetic phase of the initial in-plane anisotropic fcc β-Co phase transformation to β-Co(N) phase was terminated at paramagnetic CoN x phase. In-plane anisotropy with weak out-of-plane anisotropy of the Co/ZnO sample was initially observed in the as-grown condition. In the sputtering process, the N⁺ ions induced simultaneous sputtering and doping. An abrupt spin reorientation behavior from in-plane to out-of-plane was found under prolonged sputtering condition. The existence of perpendicular anisotropy measured from the out-of-plane Faraday effect may be attributed to the co-existence of residual β-Co and Co₄N exchange bonding force by the gradual depletion of Co-N thickness.

Tg and Structural Recovery of Single Ultrathin Films

NASA Astrophysics Data System (ADS)

Simon, Sindee

The behavior of materials confined at the nanoscale has been of considerable interest over the past two decades. Here, the focus is on recent results for single polystyrene ultrathin films studied with ultrafast scanning chip calorimetry. The Tg depression of a 20 nm-thick high-molecular-weight polystyrene film is found to be a function of cooling rate, decreasing with increasing cooling rate; whereas, at high enough cooling rates (e.g., 1000 K/s), Tg is the same as the bulk within the error of the measurements. Structural recovery is also performed with chip calorimetry as a function of aging time and temperature, and the evolution of the fictive temperature is followed. The advantages of the Flash DSC include sufficient sensitivity to measure enthalpy recovery for a single 20 nm-thick film, as well as extension of the measurements to aging temperatures as high as 15 K above nominal Tg and to aging times as short as 0.01 s. The aging behavior and relaxation time-temperature map for single ultrathin films are compared to those for bulk material. Comparison to behavior in other geometries will also be discussed.

Enhanced magnetic moment in ultrathin Fe-doped CoFe2O4 films

NASA Astrophysics Data System (ADS)

Moyer, J. A.; Vaz, C. A. F.; Kumah, D. P.; Arena, D. A.; Henrich, V. E.

2012-11-01

The effect of film thickness on the magnetic properties of ultrathin Fe-doped cobalt ferrite (Co1-xFe2+xO4) grown on MgO (001) substrates is investigated by superconducting quantum interference device magnetometry and x-ray magnetic linear dichroism, while the distribution of the Co2+ cations between the octahedral and tetrahedral lattice sites is studied with x-ray absorption spectroscopy. For films thinner than 10 nm, there is a large enhancement of the magnetic moment; conversely, the remanent magnetization and coercive fields both decrease, while the magnetic spin axes of all the cations become less aligned with the [001] crystal direction. In particular, at 300 K the coercive fields of the thinnest films vanish. The spectroscopy data show that no changes occur in the cation distribution as a function of film thickness, ruling this out as the origin of the enhanced magnetic moment. However, the magnetic measurements all support the possibility that these ultrathin Fe-doped CoFe2O4 films are transitioning into a superparamagnetic state, as has been seen in ultrathin Fe3O4. A weakening of the magnetic interactions at the antiphase boundaries, leading to magnetically independent domains within the film, could explain the enhanced magnetic moment in ultrathin Fe-doped CoFe2O4 and the onset of superparamagnetism at room temperature.

Fabrication of ultrathin film capacitors by chemical solution deposition

DOE PAGES

Brennecka, Geoff L.; Tuttle, Bruce A.

2007-10-01

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm 2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nmmore » but are still macroscopically addressable with specific capacitance values >160 nF/mm 2.« less

Transport in ultrathin gold films decorated with magnetic Gd atoms

NASA Astrophysics Data System (ADS)

Alemani, Micol; Helgren, Erik; Hugel, Addison; Hellman, Frances

2008-03-01

We have performed four-probe transport measurements of ultrathin Au films decorated with Gd ad-atoms. The samples were prepared by quench condensation, i.e., sequential evaporation on a cryogenically cooled substrate under UHV conditions while monitoring the film thickness and resistance. Electrically continuous Au films at thickness of about 2 mono-layers of material are grown on an amorphous Ge wetting layer. The quench condensation method provides a sensitive control on the sample growth process, allowing us to tune the morphological and electrical configuration of the system. The ultrathin gold films develop from an insulating to a metallic state as a function of film thickness. The temperature dependence of the Au conductivity for different thickness is studied. It evolves from hopping transport for the insulating films, to a ln T dependence for thicker films. For gold films in the insulating regime we found a decreasing resistance by adding Gd. This is in agreement with a decreasing tunneling barrier height between metallic atoms. The Gd magnetic moments are randomly oriented for isolated atoms. This magnetic disorder leads to scattering of the charge carriers and a reduced conductivity compared to nonmagnetic materials.

Superstable Ultrathin Water Film Confined in a Hydrophilized Carbon Nanotube.

PubMed

Tomo, Yoko; Askounis, Alexandros; Ikuta, Tatsuya; Takata, Yasuyuki; Sefiane, Khellil; Takahashi, Koji

2018-03-14

Fluids confined in a nanoscale space behave differently than in the bulk due to strong interactions between fluid molecules and solid atoms. Here, we observed water confined inside "open" hydrophilized carbon nanotubes (CNT), with diameter of tens of nanometers, using transmission electron microscopy (TEM). A 1-7 nm water film adhering to most of the inner wall surface was observed and remained stable in the high vacuum (order of 10 -5 Pa) of the TEM. The superstability of this film was attributed to a combination of curvature, nanoroughness, and confinement resulting in a lower vapor pressure for water and hence inhibiting its vaporization. Occasional, suspended ultrathin water film with thickness of 3-20 nm were found and remained stable inside the CNT. This film thickness is 1 order of magnitude smaller than the critical film thickness (about 40 nm) reported by the Derjaguin-Landau-Verwey-Overbeek theory and previous experimental investigations. The stability of the suspended ultrathin water film is attributed to the additional molecular interactions due to the extended water meniscus, which balances the rest of the disjoining pressures.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Laser-assisted atom probe tomography of Ti/TiN films deposited on Si.

PubMed

Sanford, N A; Blanchard, P T; White, R; Vissers, M R; Diercks, D R; Davydov, A V; Pappas, D P

2017-03-01

Laser-assisted atom probe tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of 5/5/5 (nm). Such materials are of interest for applications that require large arrays of microwave kinetic inductance detectors. The trilayers were deposited on Si substrates by reactive sputtering. Electron energy loss microscopy performed in a scanning transmission electron microscope (STEM/EELS) was used to corroborate the L-APT results and establish the overall thicknesses of the trilayers. Three separate batches were studied where the first (bottom) TiN layer was deposited at 500°C (for all batches) and the subsequent TiN/Ti bilayer was deposited at ambient temperature, 250°C, and 500°C, respectively. L-APT rendered an approximately planar TiN/Si interface by making use of plausible mass-spectral assignments to N 3 1+ , SiN 1+ , and SiO 1+ . This was necessary since ambiguities associated with the likely simultaneous occurrence of Si 1+ and N 2 1+ prevented their use in rendering the TiN/Si interface upon reconstruction. The non-superconducting Ti 2 N phase was also revealed by L-APT. Neither L-APT nor STEM/EELS rendered sharp Ti/TiN interfaces and the contrast between these layers diminished with increased film deposition temperature. L-APT also revealed that hydrogen was present in varying degrees in all samples including control samples that were composed of single layers of Ti or TiN. Published by Elsevier Ltd.

Ultrathin planar hematite film for solar photoelectrochemical water splitting

DOE PAGES

Liu, Dong; Bierman, David M.; Lenert, Andrej; ...

2015-10-08

Hematite holds promise for photoelectrochemical (PEC) water splitting due to its stability, low-cost, abundance and appropriate bandgap. However, it suffers from a mismatch between the hole diffusion length and light penetration length. We have theoretically designed and characterized an ultrathin planar hematite/silver nanohole array/silver substrate photoanode. Due to the supported destructive interference and surface plasmon resonance, photons are efficiently absorbed in an ultrathin hematite film. In conclusion, compared with ultrathin hematite photoanodes with nanophotonic structures, this photoanode has comparable photon absorption but with intrinsically lower recombination losses due to its planar structure and promises to exceed the state-of-the-art photocurrent ofmore » hematite photoanodes.« less

Magnetic x-ray linear dichroism of ultrathin Fe-Ni alloy films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, F.O.; Willis, R.F.; Goodman, K.W.

1997-04-01

The authors have studied the magnetic structure of ultrathin Fe-Ni alloy films as a function of Fe concentration by measuring the linear dichroism of the 3p-core levels in angle-resolved photoemission spectroscopy. The alloy films, grown by molecular-beam epitaxy on Cu(001) surfaces, were fcc and approximately four monolayers thick. The intensity of the Fe dichroism varied with Fe concentration, with larger dichroisms at lower Fe concentrations. The implication of these results to an ultrathin film analogue of the bulk Invar effect in Fe-Ni alloys will be discussed. These measurements were performed at the Spectromicroscopy Facility (Beamline 7.0.1) of the Advanced Lightmore » Source.« less

Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Kar, Debjit

2017-12-01

A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

NASA Astrophysics Data System (ADS)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films

PubMed Central

Wang, Xuewen; He, Xuexia; Zhu, Hongfei; Sun, Linfeng; Fu, Wei; Wang, Xingli; Hoong, Lai Chee; Wang, Hong; Zeng, Qingsheng; Zhao, Wu; Wei, Jun; Jin, Zhong; Shen, Zexiang; Liu, Jie; Zhang, Ting; Liu, Zheng

2016-01-01

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d33) up to 33 pm·V−1 was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices. PMID:27419234

Subatomic deformation driven by vertical piezoelectricity from CdS ultrathin films.

PubMed

Wang, Xuewen; He, Xuexia; Zhu, Hongfei; Sun, Linfeng; Fu, Wei; Wang, Xingli; Hoong, Lai Chee; Wang, Hong; Zeng, Qingsheng; Zhao, Wu; Wei, Jun; Jin, Zhong; Shen, Zexiang; Liu, Jie; Zhang, Ting; Liu, Zheng

2016-07-01

Driven by the development of high-performance piezoelectric materials, actuators become an important tool for positioning objects with high accuracy down to nanometer scale, and have been used for a wide variety of equipment, such as atomic force microscopy and scanning tunneling microscopy. However, positioning at the subatomic scale is still a great challenge. Ultrathin piezoelectric materials may pave the way to positioning an object with extreme precision. Using ultrathin CdS thin films, we demonstrate vertical piezoelectricity in atomic scale (three to five space lattices). With an in situ scanning Kelvin force microscopy and single and dual ac resonance tracking piezoelectric force microscopy, the vertical piezoelectric coefficient (d 33) up to 33 pm·V(-1) was determined for the CdS ultrathin films. These findings shed light on the design of next-generation sensors and microelectromechanical devices.

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

NASA Astrophysics Data System (ADS)

Anaya, Julian; Rossi, Stefano; Alomari, Mohammed; Kohn, Erhard; Tóth, Lajos; Pécz, Béla; Kuball, Martin

2015-06-01

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films

NASA Astrophysics Data System (ADS)

Sidorova, Mariia V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Yu. P.; Mikhailov, M. Yu.; Devizenko, A. Yu.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N.

2018-05-01

We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe -ph˜14 0 -19 0 ps at TC=3.4 K , supporting the results of earlier measurements by independent techniques.

The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

2011-12-01

Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

TOPICAL REVIEW: Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

NASA Astrophysics Data System (ADS)

Stoldt, Conrad R.; Bright, Victor M.

2006-05-01

A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film.

Manipulation of Spin-Torque Generation Using Ultrathin Au

NASA Astrophysics Data System (ADS)

An, Hongyu; Haku, Satoshi; Kanno, Yusuke; Nakayama, Hiroyasu; Maki, Hideyuki; Shi, Ji; Ando, Kazuya

2018-06-01

The generation and the manipulation of current-induced spin-orbit torques are of essential interest in spintronics. However, in spite of the vital progress in spin orbitronics, electric control of the spin-torque generation still remains elusive and challenging. We report on electric control of the spin-torque generation using ionic-liquid gating of ultrathin Au. We show that by simply depositing a SiO2 capping layer on an ultrathin-Au /Ni81Fe19 bilayer, the spin-torque generation efficiency is drastically enhanced by a maximum of 7 times. This enhancement is verified to be originated from the rough ultrathin-Au /Ni81Fe19 interface induced by the SiO2 deposition, which results in the enhancement of the interface spin-orbit scattering. We further show that the spin-torque generation efficiency from the ultrathin Au film can be reversibly manipulated by a factor of 2 using the ionic gating with an external electric field within a small range of 1 V. These results pave a way towards the efficient control of the spin-torque generation in spintronic applications.

Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

NASA Astrophysics Data System (ADS)

Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

2016-04-01

Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

NASA Technical Reports Server (NTRS)

Pantic, Dragan M.; Kapoor, Vik J.; Young, Paul G.; Williams, Wallace D.; Dickman, John E.

1990-01-01

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

PubMed

Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

2017-05-24

In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

Distinguishability of N Composition Profiles In SiON Films On Si By Angle-Resolved X-ray Photoelectron Spectroscopy

NASA Astrophysics Data System (ADS)

Powell, C. J.; Werner, W. S. M.; Smekal, W.

2007-09-01

We report on the use of the NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) to determine N 1s, O 1s, and Si 2p3/2 photoelectron intensities for a 25 Å SiON film on a Si substrate with different distributions of N in the film. These simulations were made to assess the distinguishability of angle-resolved x-ray photoelectron spectroscopy (ARXPS) signals for each N distribution. Our approach differs from conventional simulations of ARXPS data in that we do not neglect elastic scattering of the photoelectrons and the finite solid angle of the analyzer. Appreciable dispersion of the photoelectron intensities was found only for the N 1s intensities at an emission angle of 75° (with respect to the surface normal). Conventional analyses of ARXPS data that include such large emission angles are unlikely to be valid due to angle-dependent changes of the attenuation length. We demonstrate the magnitude of elastic-scattering and analyzer solid-angle effects on the calculated angular distributions.

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

PubMed

Choi, Juyun; Choi, Seongheum; Kang, Yu-Seon; Na, Sekwon; Lee, Hoo-Jeong; Cho, Mann-Ho; Kim, Hyoungsub

2014-08-27

An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

A dual-stimuli-responsive fluorescent switch ultrathin film

NASA Astrophysics Data System (ADS)

Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

2015-10-01

Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

NASA Astrophysics Data System (ADS)

Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

2017-04-01

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

Silicon content design of CrSiN films for good anti-corrosion and anti-wear performances in NaOH solution

NASA Astrophysics Data System (ADS)

Wang, Haixin; Ye, Yuwei; Wang, Chunting; Zhang, Guangan; Liu, Wei

2018-06-01

The CrSiN films with different silicon contents were fabricated by medium frequency magnetron sputtering. The 304L stainless steel and Si (1 0 0) wafer were used for substrate specimens. Film plasticity, corrosion and tribological behaviors in 0.1 M NaOH solution were systematically investigated. Results show that the plasticity of CrN film could be improved by the addition of silicon. During the corrosion test, with the increase of silicon content, the corrosion current density exhibited a descending trend and impedance presented a rising trend. The COF and wear rate of as-prepared CrSiN film initially decreased and then increased as the silicon content increased. The CrSiN film with 12.7 at.% Si exhibited the lowest COF of 0.04 and a wear rate of 6.746  ×  10‑8 mm3 Nm‑1 in 0.1 M NaOH solution.

Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kehagias, Th.; Dimitrakopulos, G. P.; Koukoula, T.

2013-10-28

Transmission electron microscopy has been employed to analyze the direct nucleation and growth, by plasma-assisted molecular beam epitaxy, of high quality InN (0001) In-face thin films on (111) Si substrates. Critical steps of the heteroepitaxial growth process are InN nucleation at low substrate temperature under excessively high N-flux conditions and subsequent growth of the main InN epilayer at the optimum conditions, namely, substrate temperature 400–450 °C and In/N flux ratio close to 1. InN nucleation occurs in the form of a very high density of three dimensional (3D) islands, which coalesce very fast into a low surface roughness InN film.more » The reduced reactivity of Si at low temperature and its fast coverage by InN limit the amount of unintentional Si nitridation by the excessively high nitrogen flux and good bonding/adhesion of the InN film directly on the Si substrate is achieved. The subsequent overgrowth of the main InN epilayer, in a layer-by-layer growth mode that enhances the lateral growth of InN, reduces significantly the crystal mosaicity and the density of threading dislocations is about an order of magnitude less compared to InN films grown using an AlN/GaN intermediate nucleation/buffer layer on Si. The InN films exhibit the In-face polarity and very smooth atomically stepped surfaces.« less

A molecular dynamics analysis of ion irradiation of ultrathin amorphous carbon films

NASA Astrophysics Data System (ADS)

Qi, J.; Komvopoulos, K.

2016-09-01

Molecular dynamics (MD) simulations provide insight into nanoscale problems where continuum description breaks down, such as the modeling of ultrathin films. Amorphous carbon (a-C) films are commonly used as protective overcoats in various contemporary technologies, including microelectromechanical systems, bio-implantable devices, optical lenses, and hard-disk drives. In all of these technologies, the protective a-C film must be continuous and very thin. For example, to achieve high storage densities (e.g., on the order of 1 Tb/in.2) in magnetic recording, the thickness of the a-C film used to protect the magnetic media and the recording head against mechanical wear and corrosion must be 2-3 nm. Inert ion irradiation is an effective post-deposition method for reducing the film thickness, while preserving the mechanical and chemical characteristics. In this study, MD simulations of Ar+ ion irradiated a-C films were performed to elucidate the effects of the ion incidence angle and ion kinetic energy on the film thickness and structure. The MD results reveal that the film etching rate exhibits a strong dependence on the ion kinetic energy and ion incidence angle, with a maximum etching rate corresponding to an ion incidence angle of ˜20°. It is also shown that Ar+ ion irradiation mainly affects the structure of the upper half of the ultrathin a-C film and that carbon atom hybridization is a strong function of the ion kinetic energy and ion incidence angle. The results of this study elucidate the effects of important ion irradiation parameters on the structure and thickness of ultrathin films and provide fundamental insight into the physics of dry etching.

Coupling of microphase separation and dewetting in weakly segregated diblock co-polymer ultrathin films.

PubMed

Yan, Derong; Huang, Haiying; He, Tianbai; Zhang, Fajun

2011-10-04

We have studied the coupling behavior of microphase separation and autophobic dewetting in weakly segregated poly(ε-caprolactone)-block-poly(L-lactide) (PCL-b-PLLA) diblock co-polymer ultrathin films on carbon-coated mica substrates. At temperatures higher than the melting point of the PLLA block, the co-polymer forms a lamellar structure in bulk with a long period of L ∼ 20 nm, as determined using small-angle X-ray scattering. The relaxation procedure of ultrathin films with an initial film thickness of h = 10 nm during annealing has been followed by atomic force microscopy (AFM). In the experimental temperature range (100-140 °C), the co-polymer dewets to an ultrathin film of itself at about 5 nm because of the strong attraction of both blocks with the substrate. Moreover, the dewetting velocity increases with decreasing annealing temperatures. This novel dewetting kinetics can be explained by a competition effect of the composition fluctuation driven by the microphase separation with the dominated dewetting process during the early stage of the annealing process. While dewetting dominates the relaxation procedure and leads to the rupture of the ultrathin films, the composition fluctuation induced by the microphase separation attempts to stabilize them because of the matching of h to the long period (h ∼ 1/2L). The temperature dependence of these two processes leads to this novel relaxation kinetics of co-polymer thin films. © 2011 American Chemical Society

In situ study of the electronic structure of atomic layer deposited oxide ultrathin films upon oxygen adsorption using ambient pressure XPS

DOE PAGES

Mao, Bao-Hua; Crumlin, Ethan; Tyo, Eric C.; ...

2016-07-21

In this work, ambient pressure X-ray photoelectron spectroscopy (APXPS) was used to investigate the effect of oxygen adsorption on the band bending and electron affinity of Al 2O 3, ZnO and TiO 2 ultrathin films (~1 nm in thickness) deposited on a Si substrate by atomic layer deposition (ALD). Upon exposure to oxygen at room temperature (RT), upward band bending was observed on all three samples, and a decrease in electron affinity was observed on Al 2O 3 and ZnO ultrathin films at RT. At 80°C, the magnitude of the upward band bending decreased, and the change in the electronmore » affinity vanished. These results indicate the existence of two surface oxygen species: a negatively charged species that is strongly adsorbed and responsible for the observed upward band bending, and a weakly adsorbed species that is polarized, lowering the electron affinity. Based on the extent of upward band bending on the three samples, the surface coverage of the strongly adsorbed species exhibits the following order: Al 2O 3 > ZnO > TiO 2. This finding is in stark contrast to the trend expected on the surface of these bulk oxides, and highlights the unique surface activity of ultrathin oxide films with important implications, for example, in oxidation reactions taking place on these films or in catalyst systems where such oxides are used as a support material.« less

Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Young Mi; Jung, Min-Sang; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr, E-mail: mcjung@oist.jp

2015-08-15

Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiO{sub x}-capped Si, and SiO{sub 2}-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

NASA Astrophysics Data System (ADS)

Feng, Liang; Ping, Chen; De-Gang, Zhao; De-Sheng, Jiang; Zhi-Juan, Zhao; Zong-Shun, Liu; Jian-Jun, Zhu; Jing, Yang; Wei, Liu; Xiao-Guang, He; Xiao-Jing, Li; Xiang, Li; Shuang-Tao, Liu; Hui, Yang; Li-Qun, Zhang; Jian-Ping, Liu; Yuan-Tao, Zhang; Guo-Tong, Du

2016-05-01

We have investigated the electron affinity of Si-doped AlN films (N Si = 1.0 × 1018-1.0 × 1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Band gap tuning of epitaxial SrTiO{sub 3-δ}/Si(001) thin films through strain engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cottier, Ryan J.; Steinle, Nathan A.; Currie, Daniel A.

2015-11-30

We investigate the effect of strain and oxygen vacancies (V{sub O}) on the crystal and optical properties of oxygen deficient, ultra-thin (4–30 nm) films of SrTiO{sub 3-δ} (STO) grown heteroepitaxially on p-Si(001) substrates by molecular beam epitaxy. We demonstrate that STO band gap tuning can be achieved through strain engineering and show that the energy shift of the direct energy gap transition of SrTiO{sub 3-δ}/Si films has a quantifiable dimensional and doping dependence that correlates well with the changes in crystal structure.

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

NASA Astrophysics Data System (ADS)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

2007-11-01

A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO2). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer etal . [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-film boundary conditions result in qualitatively different dispersion relationships especially in the limit as kho≪1, where k is the wavenumber of the perturbation and ho is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably contribute to surface

Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters

PubMed Central

2013-01-01

Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiNx films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E04 while deteriorating the electrical conductivity of the Si-NCs/SiNx film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiNx film as a mixture of a high-transparency SiNx phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc-Si heterojunction solar cell. PMID:24188725

High-Pressure CO2 Sorption in Polymers of Intrinsic Microporosity under Ultrathin Film Confinement.

PubMed

Ogieglo, Wojciech; Ghanem, Bader; Ma, Xiaohua; Wessling, Matthias; Pinnau, Ingo

2018-04-04

Ultrathin microporous polymer films are pertinent to the development and further spread of nanotechnology with very promising potential applications in molecular separations, sensors, catalysis, or batteries. Here, we report high-pressure CO 2 sorption in ultrathin films of several chemically different polymers of intrinsic microporosity (PIMs), including the prototypical PIM-1. Films with thicknesses down to 7 nm were studied using interference-enhanced in situ spectroscopic ellipsometry. It was found that all PIMs swell much more than non-microporous polystyrene and other high-performance glassy polymers reported previously. Furthermore, chemical modifications of the parent PIM-1 strongly affected the swelling magnitude. By investigating the behavior of relative refractive index, n rel , it was possible to study the interplay between micropores filling and matrix expansion. Remarkably, all studied PIMs showed a maximum in n rel at swelling of 2-2.5% indicating a threshold point above which the dissolution in the dense matrix started to dominate over sorption in the micropores. At pressures above 25 bar, all PIMs significantly plasticized in compressed CO 2 and for the ones with the highest affinity to the penetrant, a liquidlike mixing typical for rubbery polymers was observed. Reduction of film thickness below 100 nm revealed pronounced nanoconfinement effects and resulted in a large swelling enhancement and a quick loss of the ultrarigid character. On the basis of the partial molar volumes of the dissolved CO 2 , the effective reduction of the T g was estimated to be ∼200 °C going from 128 to 7 nm films.

Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films

NASA Astrophysics Data System (ADS)

Mo, D. L.; Wang, W. B.; Cai, Q.

2016-08-01

In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction plays a dominant role. The Fermi level is found to be 81 meV above the Dirac point, and the carrier mobility can reach ~6030 cm2/(Vs) for the 10-nm film. When the film thickness decreases from 30 to 10 nm, the Fermi level will move 8 meV far from the bulk valence band. The coefficient α in the Hikami-Larkin-Nagaoka equation is shown to be ~0.5, manifesting that only the bottom surface of the Bi2Te3 ultrathin films takes part in transport conductions. These will pave the way for understanding thoroughly the surface transport properties of topological insulators.

Spin fluctuation induced linear magnetoresistance in ultrathin superconducting FeSe films

DOE PAGES

Wang, Qingyan; Zhang, Wenhao; Chen, Weiwei; ...

2017-07-21

The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transitionmore » region in ultrathin FeSe/STO films.« less

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

PubMed

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-11-13

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

PubMed Central

Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

2015-01-01

2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices. PMID:26563573

Dynamics of ultrathin metal films on amorphous substrates under fast thermal processing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, Radhakrishna

A mathematical model is developed to analyze the growth/decay rate of surface perturbations of an ultrathin metal film on an amorphous substrate (SiO{sub 2}). The formulation combines the approach of Mullins [W. W. Mullins, J. Appl. Phys. 30, 77 (1959)] for bulk surfaces, in which curvature-driven mass transport and surface deformation can occur by surface/volume diffusion and evaporation-condensation processes, with that of Spencer et al. [B. J. Spencer, P. W. Voorhees, and S. H. Davis, Phys. Rev. Lett. 67, 26 (1991)] to describe solid-state transport in thin films under epitaxial strain. Modifications of the Mullins model to account for thin-filmmore » boundary conditions result in qualitatively different dispersion relationships especially in the limit as kh{sub o}<<1, where k is the wavenumber of the perturbation and h{sub o} is the unperturbed film height. The model is applied to study the relative rate of solid-state mass transport as compared to that of liquid phase dewetting in a thin film subjected to a fast thermal pulse. Specifically, we have recently shown that multiple cycles of nanosecond (ns) pulsed laser melting and resolidification of ultrathin metal films on amorphous substrates can lead to the formation of various types of spatially ordered nanostructures [J. Trice, D. Thomas, C. Favazza, R. Sureshkumar, and R. Kalyanaraman, Phys. Rev. B 75, 235439 (2007)]. The pattern formation has been attributed to the dewetting of the thin film by a hydrodynamic instability. In such experiments the film is in the solid state during a substantial fraction of each thermal cycle. However, results of a linear stability analysis based on the aforementioned model suggest that solid-state mass transport has a negligible effect on morphological changes of the surface. Further, a qualitative analysis of the effect of thermoelastic stress, induced by the rapid temperature changes in the film-substrate bilayer, suggests that stress relaxation does not appreciably

Tunneling interferometry and measurement of the thickness of ultrathin metallic Pb(111) films

NASA Astrophysics Data System (ADS)

Ustavshchikov, S. S.; Putilov, A. V.; Aladyshkin, A. Yu.

2017-10-01

Spectra of the differential tunneling conductivity for ultrathin lead films grown on Si(111) 7 × 7 single crystals with a thickness of 9 to 50 ML have been studied by low-temperature scanning tunneling microscopy and spectroscopy. The presence of local maxima of the tunneling conductivity is characteristic of such systems. The energies of maxima of the differential conductivity are determined by the spectrum of quantum-confined states of electrons in a metallic layer and, consequently, the local thickness of the layer. It has been shown that features of the microstructure of substrates, such as steps of monatomic height, structural defects, and inclusions of other materials covered with a lead layer, can be visualized by bias-modulation scanning tunneling spectroscopy.

Growth (AlCrNbSiTiV)N thin films on the interrupted turning and properties using DCMS and HIPIMS system

NASA Astrophysics Data System (ADS)

Chang, Kai-Sheng; Chen, Kuan-Ta; Hsu, Chun-Yao; Hong, Po-Da

2018-05-01

This paper determines the optimal settings in the deposition parameters for (AlCrNbSiTiV)N high-entropy alloy (HEAs) nitride films that are deposited on CBN cutting tools and glass substrates. We use direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HIPIMS), with Ar plasma and N2 reactive gases. Experiments with the grey-Taguchi method are conducted to determine the effect of deposition parameters (deposition time, substrate DC bias, DC power and substrate temperature) on interrupted turning 50CrMo4 steel machining and the films' structural properties. Experimental result shows that the multiple performance characteristics for these (AlCrNbSiTiV)N HEAs film coatings can be improved using the grey-Taguchi method. As can be seen, the coated film is homogeneous, very compact and exhibits perfect adherence to the substrate. The distribution of elements is homogeneous through the depth of the (AlCrNbSiTiV)N film, as measured by an auger electron nanoscope. After interrupted turning with an (AlCrNbSiTiV)N film coated tool, we obtain much longer tool life than when using uncoated tools. The correlation of these results with microstructure analysis and tool life indicates that HIPIMS discharge induced a higher (AlCrNbSiTiV)N film density, a smoother surface structure and a higher hardness surface.

Dissolvable Films of Silk Fibroin for Ultrathin Conformal Bio-Integrated Electronics

DTIC Science & Technology

2010-06-01

the systems described in the following, ultrathin, spin- cast films of polyimide (PI) served as a support for arrays of electrodes designed for...micropatterning of optically transparent, mechanically robust, biocompatible silk fibroin films. Adv. Mater. 20, 3070–3072 (2008). 20. Murphy, A. R., John, P. S...analysis of induced colour change on periodically nanopatterned silk films. Opt. Express 17, 21271–21279 (2009). 25. Parker, S. T. et al. Biocompatible

Ultrathin NiGe films prepared via catalytic solid-vapor reaction of Ni with GeH(4).

PubMed

Peter, Antony P; Opsomer, Karl; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Richard, Olivier; Vaesen, Inge; Moussa, Alain; Franquet, Alexis; Zsolt, Tokei; Van Elshocht, Sven

2013-10-09

A low-temperature (225-300 °C) solid-vapor reaction process is reported for the synthesis of ultrathin NiGe films (∼6-23 nm) on 300 mm Si wafers covered with thermal oxide. The films were prepared via catalytic chemical vapor reaction of germane (GeH4) gas with physical vapor deposited (PVD) Ni films of different thickness (2-10 nm). The process optimization by investigating GeH4 partial pressure, reaction temperature, and time shows that low resistive, stoichiometric, and phase pure NiGe films can be formed within a broad window. NiGe films crystallized in an orthorhombic structure and were found to exhibit a smooth morphology with homogeneous composition as evidenced by glancing angle X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back-scattering (RBS) analysis. Transmission electron microscopy (TEM) analysis shows that the NiGe layers exhibit a good adhesion without voids and a sharp interface on the thermal oxide. The NiGe films were found to be morphologically and structurally stable up to 500 °C and exhibit a resistivity value of 29 μΩ cm for 10 nm NiGe films.

Brillouin light scattering studies of the mechanical properties of ultrathin low-k dielectric films

NASA Astrophysics Data System (ADS)

Link, A.; Sooryakumar, R.; Bandhu, R. S.; Antonelli, G. A.

2006-07-01

In an effort to reduce RC time delays that accompany decreasing feature sizes, low-k dielectric films are rapidly emerging as potential replacements for silicon dioxide (SiO2) at the interconnect level in integrated circuits. The main challenge in low-k materials is their substantially weaker mechanical properties that accompany the increasing pore volume content needed to reduce k. We show that Brillouin light scattering is an excellent nondestructive technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for a direct measure of the principal elastic constants that completely characterize the mechanical properties of these ultrathin films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. We further show that the values obtained by this method agree well with other experimental techniques such as nanoindentation and picosecond laser ultrasonics.

Microstructures, mechanical behavior and strengthening mechanism of TiSiCN nanocomposite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Liu, Ping; Xue, Zenghui

Recently, the arguments have existed in the strengthening mechanism and microstructural model of the nanocomposite film due to lack of the convincible experimental evidences. In this investigation, the quarternary TiSiCN nanocomposite films with the different C and Si contents are synthesized by the reactive-magnetron-sputtering technique. The TiSiCN film is characterized as the nanocomposite structure with the TiN nanocrystallites surrounded by the (Si 3N 4 + C + CN x) interface phase. When the C/Si content ratio is 2:2, the TiSiCN nanocomposite film is remarkably strengthened with the maximal hardness and elastic modulus of 46.1 GPa and 425 GPa, respectively. Meanwhile,more » the (Si 3N 4 + C + CN x) interfaces exhibit as a crystallized form, which can coordinate the growth misorientations and maintain the coherently epitaxial growth between the TiN nanocrystallites and interfaces. Through the high-resolution transmission electron microscopy (HRTEM) observations, this investigation firstly provides the direct experimental evidence for the crystallized feature of the interfaces when the TiSiCN nanocomposite film is strengthened, suggesting that the strengthening effect of the TiSiCN nanocomposite film can be attributed to the coherent-interface strengthening mechanism, which is expressed as the “nc-TiN/c-Si 3N 4/c-C/c-CN x” model.« less

Microstructures, mechanical behavior and strengthening mechanism of TiSiCN nanocomposite films

DOE PAGES

Li, Wei; Liu, Ping; Xue, Zenghui; ...

2017-05-18

Recently, the arguments have existed in the strengthening mechanism and microstructural model of the nanocomposite film due to lack of the convincible experimental evidences. In this investigation, the quarternary TiSiCN nanocomposite films with the different C and Si contents are synthesized by the reactive-magnetron-sputtering technique. The TiSiCN film is characterized as the nanocomposite structure with the TiN nanocrystallites surrounded by the (Si 3N 4 + C + CN x) interface phase. When the C/Si content ratio is 2:2, the TiSiCN nanocomposite film is remarkably strengthened with the maximal hardness and elastic modulus of 46.1 GPa and 425 GPa, respectively. Meanwhile,more » the (Si 3N 4 + C + CN x) interfaces exhibit as a crystallized form, which can coordinate the growth misorientations and maintain the coherently epitaxial growth between the TiN nanocrystallites and interfaces. Through the high-resolution transmission electron microscopy (HRTEM) observations, this investigation firstly provides the direct experimental evidence for the crystallized feature of the interfaces when the TiSiCN nanocomposite film is strengthened, suggesting that the strengthening effect of the TiSiCN nanocomposite film can be attributed to the coherent-interface strengthening mechanism, which is expressed as the “nc-TiN/c-Si 3N 4/c-C/c-CN x” model.« less

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Du, H.; Skowronski, M.; Spry, D. J.; Trunek, A. J.

2007-01-01

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Fluctuation conductance and the Berezinskii-Kosterlitz-Thouless transition in two dimensional epitaxial NbTiN ultra-thin films

NASA Astrophysics Data System (ADS)

K, Makise; H, Terai; T, Yamashita; S, Miki; Z, Wang; Uzawa Y, Y.; S, Ezaki; T, Odou; B, Shinozaki

2012-12-01

We study on the electric transport properties of epitaxial NbTiN ultrathin films in a range from 2 to 8nm. The films with 4 nm thick shows superconductivity of which mean-field superconducting transition temperature is TC0 = 9.43 K The excess conductance due to superconducting fluctuations was measured at temperatures above TC0. The paraconductivity shows a two-dimensional like behaviour at close to TC0. Experimental results are in good agreement with the sum of Aslamazov - Larkin and Maki - Thompson term for superconducting fluctuation theory. Decreasing temperature below TC0, the current-voltage characteristic shows a crossover from linear to nonlinear behaviour. The exponent α of current-voltage relation, V ~ Iα showed universal jump at TCBKT = 9.33 K As results, we find that there is a consistency between the parametrization of the2D characteristics of fluctuation paraconductivity above TC0 and Berezinskii-Kosterlitz-Thouless type behaviour below TC0.

A dual-stimuli-responsive fluorescent switch ultrathin film.

PubMed

Li, Zhixiong; Liang, Ruizheng; Liu, Wendi; Yan, Dongpeng; Wei, Min

2015-10-28

Stimuli-responsive fluorescent switches have shown broad applications in optical devices, biological materials and intelligent responses. Herein, we describe the design and fabrication of a dual-stimuli-responsive fluorescent switch ultrathin film (UTF) via a three-step layer-by-layer (LBL) technique: (i) encapsulation of spiropyran (SP) within an amphiphilic block copolymer (PTBEM) to give the (SP@PTBEM) micelle; (ii) the mixture of riboflavin (Rf) and poly(styrene 4-sulfonate) (PSS) to enhance the adhesion ability of small molecules; (iii) assembly of negatively charged SP@PTBEM and Rf-PSS with cationic layered double hydroxide (LDH) nanoplatelets to obtain the (Rf-PSS/LDH/SP@PTBEM)n UTFs (n: bilayer number). The assembly process of the UTFs and their luminescence properties, as monitored by fluorescence spectroscopy and scanning electron microscopy (SEM), present a uniform and ordered layered structure with stepwise growth. The resulting Rf-PSS/LDH/SP@PTBEM UTF serves as a three-state switchable multicolor (green, yellow, and red) luminescent system based on stimulation from UV/Vis light and pH, with an acceptable reversibility. Therefore, this work provides a facile way to fabricate stimuli-responsive solid-state film switches with tunable-color luminescence, which have potential applications in the areas of displays, sensors, and rewritable optical memory and fluorescent logic devices.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

NASA Astrophysics Data System (ADS)

Huang, Zhiquan

Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si

Camphor-Enabled Transfer and Mechanical Testing of Centimeter-Scale Ultrathin Films.

PubMed

Wang, Bin; Luo, Da; Li, Zhancheng; Kwon, Youngwoo; Wang, Meihui; Goo, Min; Jin, Sunghwan; Huang, Ming; Shen, Yongtao; Shi, Haofei; Ding, Feng; Ruoff, Rodney S

2018-05-21

Camphor is used to transfer centimeter-scale ultrathin films onto custom-designed substrates for mechanical (tensile) testing. Compared to traditional transfer methods using dissolving/peeling to remove the support-layers, camphor is sublimed away in air at low temperature, thereby avoiding additional stress on the as-transferred films. Large-area ultrathin films can be transferred onto hollow substrates without damage by this method. Tensile measurements are made on centimeter-scale 300 nm-thick graphene oxide film specimens, much thinner than the ≈2 μm minimum thickness of macroscale graphene-oxide films previously reported. Tensile tests were also done on two different types of large-area samples of adlayer free CVD-grown single-layer graphene supported by a ≈100 nm thick polycarbonate film; graphene stiffens this sample significantly, thus the intrinsic mechanical response of the graphene can be extracted. This is the first tensile measurement of centimeter-scale monolayer graphene films. The Young's modulus of polycrystalline graphene ranges from 637 to 793 GPa, while for near single-crystal graphene, it ranges from 728 to 908 GPa (folds parallel to the tensile loading direction) and from 683 to 775 GPa (folds orthogonal to the tensile loading direction), demonstrating the mechanical performance of large-area graphene in a size scale relevant to many applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strain stabilization and thickness dependence of magnetism in epitaxial transition metal monosilicide thin films on Si(111)

NASA Astrophysics Data System (ADS)

Geisler, Benjamin; Kratzer, Peter

2013-09-01

We present a comprehensive study of different 3d transition metal monosilicides in their ground state crystal structure (B20), ranging from equilibrium bulk over biaxially strained bulk to epitaxial thin films on Si(111), by means of density functional theory. The magnetic properties of MnSi and FeSi films are found to be considerably modified due to the epitaxial strain induced by the substrate. In MnSi bulk material, which can be seen as a limit of thick films, we find a strain-induced volume expansion, an increase of the magnetic moments, and a significant rise of the energy difference between different spin configurations. The latter can be associated with an increase of the Curie temperature, which is in accordance with recent experimental results. While a ferromagnetic spin alignment is found to be the ground state also for ultrathin films, we show that for films of intermediate thickness a partially compensating magnetic ordering is more favorable; however, the films retain a net magnetic moment. Furthermore, we analyze the orbital structure in FeSi around the band gap, which can be located somewhere in the density of states for all studied B20 transition metal monosilicides, and find that FeSi becomes metallic and ferromagnetic under epitaxial strain. Finally, the influence of on-site electronic correlation and the reliability of ab initio calculations for 3d transition metal monosilicides are discussed.

Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide

NASA Astrophysics Data System (ADS)

Macco, B.; Bivour, M.; Deijkers, J. H.; Basuvalingam, S. B.; Black, L. E.; Melskens, J.; van de Loo, B. W. H.; Berghuis, W. J. H.; Hermle, M.; Kessels, W. M. M. Erwin

2018-06-01

This letter reports on effective surface passivation of n-type crystalline silicon by ultrathin niobium oxide (Nb2O5) films prepared by atomic layer deposition (ALD) and subjected to a forming gas anneal at 300 °C. A champion recombination parameter J0 of 20 fA/cm2 and a surface recombination velocity Seff of 4.8 cm/s have been achieved for ultrathin films of 1 nm. The surface pretreatment was found to have a strong impact on the passivation. Good passivation can be achieved on both HF-treated c-Si surfaces and c-Si surfaces with a wet-chemically grown interfacial silicon oxide layer. On HF-treated surfaces, a minimum film thickness of 3 nm is required to achieve a high level of surface passivation, whereas the use of a wet chemically-grown interfacial oxide enables excellent passivation even for Nb2O5 films of only 1 nm. This discrepancy in passivation between both surface types is attributed to differences in the formation and stoichiometry of interfacial silicon oxide, resulting in different levels of chemical passivation. On both surface types, the high level of passivation of ALD Nb2O5 is aided by field-effect passivation originating from a high fixed negative charge density of 1-2 × 1012 cm-3. Furthermore, it is demonstrated that the passivation level provided by 1 nm of Nb2O5 can be further enhanced through light-soaking. Finally, initial explorations show that a low contact resistivity can be obtained using Nb2O5-based contacts. Together, these properties make ALD Nb2O5 a highly interesting building block for high-efficiency c-Si solar cells.

Fabrication of multilayered Ge nanocrystals embedded in SiO xGeN y films

NASA Astrophysics Data System (ADS)

Gao, Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang, Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-09-01

Multilayered Ge nanocrystals embedded in SiO xGeN y films have been fabricated on Si substrate by a (Ge + SiO 2)/SiO xGeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction.

Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing

NASA Astrophysics Data System (ADS)

Xu, M.; Xu, S.; Chai, J. W.; Long, J. D.; Ee, Y. C.

2006-12-01

The authors report a simple method to significantly enhance the photoluminescence (PL) of SiNx films by incorporating a SiO2 buffer and annealing treatment under N2 protection. Strong visible PL is achieved with annealing temperature above 650°C. Optimal PL is obtained at 800°C. The composition and structure analysis reveal that strong PL is directly related to the content of the Si-O and Si-N bonds in the SiNx films. These bonds provide effective luminescent centers and passivate the interface between Si core and the surrounding oxide.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Temperature Controlled Electrostatic Disorder and Polymorphism in Ultrathin Films of α-Sexithiophene

NASA Astrophysics Data System (ADS)

Hoffman, Benjamin; Jafari, Sara; McAfee, Terry; Apperson, Aubrey; O'Connor, Brendan; Dougherty, Daniel

Competing phases in well-ordered alpha-sexithiophene (α-6T) are shown to contribute to electrostatic disorder observed by differences in surface potential between mono- and bi-layer crystallites. Ultrathin films are of key importance to devices in which charge transport occurs in the first several monolayers nearest to a dielectric interface (e.g. thin film transistors) and complex structures in this regime impact the general electrostatic landscape. This study is comprised of 1.5 ML sample crystals grown via organic molecular beam deposition onto a temperature controlled hexamethyldisilazane (HMDS) passivated SiO2 substrate to produce well-ordered layer-by-layer type growth. Sample topography and surface potential were characterized simultaneously using Kelvin Probe Force Microscopy to then isolate contact potential differences by first and second layer α-6T regions. Films grown on 70° C, 120° C substrates are observed to have a bilayer with lower, higher potential than the monolayer, respectively. Resulting interlayer potential differences are a clear source of electrostatic disorder and are explained as subtle shifts in tilt-angles between layers relative to the substrate. These empirical results continue our understanding of how co-existing orientations contribute to the complex electrostatics influencing charge transport. NSF CAREER award DMR-1056861.

Magnetic properties of epitaxial β-Nb2N thin film on SiC substrate

NASA Astrophysics Data System (ADS)

Yang, Zihao; Myers, Roberto; Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.

Previously superconductivity in Nb2N was studied in thin films synthesized by reactive magnetron sputtering or pulsed laser deposition. Recently, Nb2N was synthesized by molecular beam epitaxy (MBE). Here, we report on the magnetic properties of MBE grown Nb2N measured by SQUID magnetometry. The single hexagonal β phase Nb2N is grown on a semi-insulating Si-face 4H SiC (0001) substrate in nitrogen rich conditions at a substrate temperature of 850 °C. In-plane magnetization as a function of magnetic field measured at 5 K shows type-II superconductivity with critical fields Hc1 and Hc2 of 300 Oe and 10 kOe, respectively. In-plane field-cooled and zero-field-cooled a critical temperature (Tc) of 11.5 K, higher than in sputtered Nb2N films. This work was supported by Army Research Office and the Office of Naval Research.

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

NASA Astrophysics Data System (ADS)

Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

2017-11-01

The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

NASA Astrophysics Data System (ADS)

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

2015-03-01

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Thin-film formation of Si clathrates on Si wafers

NASA Astrophysics Data System (ADS)

Ohashi, Fumitaka; Iwai, Yoshiki; Noguchi, Akihiro; Sugiyama, Tomoya; Hattori, Masashi; Ogura, Takuya; Himeno, Roto; Kume, Tetsuji; Ban, Takayuki; Nonomura, Shuichi

2014-04-01

In this study, we prepared Si clathrate films (Na8Si46 and NaxSi136) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10-2 Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na8Si46 and NaxSi136 using the appropriate crystalline orientation of Si substrates.

Variations in interface compound nucleation for Ti-Al ultrathin films on Si substrates

NASA Astrophysics Data System (ADS)

Han, C. C.; Bené, R. W.

1985-11-01

We have determined the structures of compounds nucleated in a series of sequentially sputtered thin bilayer films of Al and Ti on Si substrates for a range of metal thicknesses and for both (100) and (111) substrates. The compound structures were determined by transmission electron microscopy and diffraction, augmented by Auger electron spectroscopy. An annealing temperature of about 380 °C for 30 min was required to produce compound nucleation. For the Ti/Al/Si(100) system it was found that the phases which were nucleated for samples with 30-min, 380 °C anneals varied from TiAl3 to Ti8Al24 to an unknown compound of tetragonal structure (a=b=5.782 Å, c=6.713 Å) as the Al intermediate layer thickness is changed from 200 to 60 to 40 Å. TiAl3 was the compound nucleated at 380 °C for all other cases. Finally, 410 °C annealing of the Al/Ti/Si(100) samples for 30 min resulted in formation of an apparently Al-altered form of TiSi2.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Formation of Fe2SiO4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

NASA Astrophysics Data System (ADS)

Choi, Jeongyong; Nguyen, Van Quang; Duong, Van Thiet; Shin, Yooleemi; Duong, Anh Tuan; Cho, Sunglae

2018-03-01

Fe2SiO4 thin films have been grown on n-type, p-type and semi-insulating Si(100) substrates by molecular beam epitaxy. When Fe-O thin films were deposited on Si(100) substrate at 300 °C, the film reacted with Si, resulting in a Fe2SiO4 film because of the high reactivity between Fe and Si. The electrical resistance and Seebeck coefficient of Fe2SiO4 thin films grown were different in different doping states. On n-type and p-type Si(100), the electrical resistance decreased suddenly and increased again at 350 and 250 K, respectively, while on semi-insulating Si(100), it exhibited typical semiconducting resistance behavior. We observed similar crossovers at 350 and 250 K in temperature dependent Seebeck coefficients on n-type and p-type Si(100), respectively. These results suggest that the measured electrical and thermoelectric properties originate from Si substrate.

A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell

NASA Astrophysics Data System (ADS)

Li, Y.; Han, B. C.; Gao, M.; Wan, Y. Z.; Yang, J.; Du, H. W.; Ma, Z. Q.

2017-09-01

On the basis of a photon-assisted high frequency capacitance-voltage (C-V) method (1 MHz C-V), an effective approach is developed to evaluate the average interface state density (Dit) of an ITO-SiOx/n-Si heterojunction structure. Tin-doped indium oxide (ITO) films with different thicknesses were directly deposited on (100) n-type crystalline silicon by magnetron sputtering to fabricate semiconductor-insulator-semiconductor (SIS) hetero-interface regions where an ultra-thin SiOx passivation layer was naturally created. The morphology of the SiOx layer was confirmed by X-ray photoelectron spectroscopy depth profiling and transmission electron microscope analysis. The thinness of this SiOx layer was the main reason for the SIS interface state density being more difficult to detect than that of a typical metal-oxide-semiconductor structure. A light was used for photon injection while measuring the C-V of the device, thus enabling the photon-assisted C-V measurement of the Dit. By quantifying decreases of the light-induced-voltage as a variation of the capacitance caused by parasitic charge at interface states the passivation quality within the interface of ITO-SiOx/n-Si could be reasonably evaluated. The average interface state density of these SIS devices was measured as 1.2-1.7 × 1011 eV-1 cm-2 and declined as the passivation layer was made thicker. The lifetime of the minority carriers, dark leakage current, and the other photovoltaic parameters of the devices were also used to determine the passivation.

The Improvement of Ion Plated Ag and Au Film Adherence to Si3N4 and SiC Surfaces for Increased Tribological Performance

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis

1998-01-01

A modified dc-diode plating system, utilizing a metallic screen cage as a cathode and referred as SCREEN CAGE ION PLATING (SCIP), is used to deposit Ag and Au lubricating films on Si3N4 and SiC surfaces. When deposition is performed in Ar or N2, glow discharge, the surface displays poor adhesive strength (less than 5 MPa). A dramatic increase in adhesive strength (less than 80 MPa) is achieved when plating is performed in a reactive 50% 02 + 50% Ar glow discharge. The excited/ionized oxygen species (O2(+)/O(+) in the glow discharge contribute to the oxidation of the Si3N4 or SiC surfaces as determined by X-ray Photoelectron Spectroscopy (XTS) depth profiling. The reactively sputter-oxidized S3N4 or SiC surfaces and the activated-oxidized-metastable Ag or Au species formed in the plasma cooperatively contribute to the increased adherence. As a result, the linear thermal expansion coefficient mismatch at the interface is reduced. These lubricating Ag and Au films under sliding conditions reduce the friction coefficient by a factor of 2-1/2 to 4.

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-02-23

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure.more » Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.« less

Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fager, Hanna, E-mail: hanfa@ifm.liu.se; Greczynski, Grzegorz; Jensen, Jens

Hf{sub 1−x−y}Al{sub x}Si{sub y}N (0 ≤ x ≤ 0.14, 0 ≤ y ≤ 0.12) single layer and multilayer films are grown on Si(001) at 250 °C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a single Hf{sub 0.6}Al{sub 0.2}Si{sub 0.2} target in mixed 5%-N{sub 2}/Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf{sub 1−x−y}Al{sub x}Si{sub y}N films are controlled by varying the energy E{sub i} of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E{sub i} between 10 and 40 eV allows the growthmore » of Hf{sub 0.78}Al{sub 0.10}Si{sub 0.12}N/Hf{sub 0.78}Al{sub 0.14}Si{sub 0.08}N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si–Si/Si–Hf for films grown with E{sub i} = 10 eV, to primarily Si–N with E{sub i} = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Λ, range from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while fracture toughness increases directly with Λ. Multilayers with Λ = 10 nm combine relatively high hardness, H ∼ 24 GPa, with good fracture toughness.« less

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities

NASA Astrophysics Data System (ADS)

Stegemann, Bert; Gad, Karim M.; Balamou, Patrice; Sixtensson, Daniel; Vössing, Daniel; Kasemann, Martin; Angermann, Heike

2017-02-01

Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO2/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO2/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO2/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO2/Si interfaces have been shown to generate less interface defect states.

Electrical properties of spin coated ultrathin titanium oxide films on GaAs

NASA Astrophysics Data System (ADS)

Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

2015-04-01

In recent years, ultrathin (<50 nm) metal oxide films have been being extensively studied as high-k dielectrics for future metal oxide semiconductor (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

Synthesis of Ultrathin ta-C Films by Twist-Filtered Cathodic Arc Carbon Plasmas

DTIC Science & Technology

2001-04-01

system. Ultrathin tetrahedral amorphous carbon (ta-C) films have been deposited on 6 inch wafers. Film properties have been investigated with respect to...Diamondlike films are characterized by an outstanding combination of advantageous properties : they can be very hard, tough, super-smooth, chemically...5 nm) hard carbon films are being used as protective overcoats on hard disks and read-write heads. The tribological properties of the head-disk

Synthesis of TiN/a-Si3N4 thin film by using a Mather type dense plasma focus system

NASA Astrophysics Data System (ADS)

Hussain, T.; R., Ahmad; Khalid, N.; A. Umar, Z.; Hussnain, A.

2013-05-01

A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness (root-mean-square).

SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

NASA Astrophysics Data System (ADS)

Haiping, Shang; Qiuxia, Xu

2010-05-01

By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

Multiscale Relaxation Dynamics in Ultrathin Metallic Glass-Forming Films

NASA Astrophysics Data System (ADS)

Bi, Q. L.; Lü, Y. J.; Wang, W. H.

2018-04-01

The density layering phenomenon originating from a free surface gives rise to the layerlike dynamics and stress heterogeneity in ultrathin Cu-Zr glassy films, which facilitates the occurrence of multistep relaxations in the timescale of computer simulations. Taking advantage of this condition, we trace the relaxation decoupling and evolution with temperature simply via the intermediate scattering function. We show that the β relaxation hierarchically follows fast and slow modes in films, and there is a β -relaxation transition as the film is cooled close to the glass transition. We provide the direct observation of particle motions responsible for the β relaxation and reveal the dominant mechanism varying from the thermal activated to the cooperative jumps across the transition.

Direct Imaging and First Principles Studies of Si3N4/SiO2 Interface

NASA Astrophysics Data System (ADS)

Walkosz, Weronika; Klie, Robert; Ogut, Serdar; Mikijelj, Bilijana; Pennycook, Stephen; Idrobo, Juan C.

2010-03-01

It is well known that the composition of the integranular films (IGFs) in sintered polycrystalline silicon nitride (Si3N4) ceramics controls many of their physical and mechanical properties. A considerable effort has been made to characterize these films on the atomic scale using both experimental and theoretical methods. In this talk, we present results from a combined atomic-resolution Z-contrast and annular bright field imaging, electron energy-loss spectroscopy, as well as ab initio studies of the interface between β-Si3N4 (10-10) and SiO2 intergranular film. Our results show that O replaces N at the interface between the two materials in agreement with our theoretical calculations and that N is present in the SiO2 IGF. Moreover, they indicate the presence of atomic columns completing Si3N4 open rings, which have not been observed experimentally at the recently imaged Si3N4/rare-earth oxides interfaces, but have been predicted theoretically on bare Si3N4 surfaces. The structural and electronic variations at the Si3N4/SiO2 interface will be discussed in detail, focusing in particular on bonding characteristics.

Electrical transport of spin-polarized carriers in disordered ultrathin films.

PubMed

Hernandez, L M; Bhattacharya, A; Parendo, Kevin A; Goldman, A M

2003-09-19

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.

Chain and mirophase-separated structures of ultrathin polyurethane films

NASA Astrophysics Data System (ADS)

Kojio, Ken; Uchiba, Yusuke; Yamamoto, Yasunori; Motokucho, Suguru; Furukawa, Mutsuhisa

2009-08-01

Measurements are presented how chain and microphase-separated structures of ultrathin polyurethane (PU) films are controlled by the thickness. The film thickness is varied by a solution concentration for spin coating. The systems are PUs prepared from commercial raw materials. Fourier-transform infrared spectroscopic measurement revealed that the degree of hydrogen bonding among hard segment chains decreased and increased with decreasing film thickness for strong and weak microphase separation systems, respectively. The microphase-separated structure, which is formed from hard segment domains and a surrounding soft segment matrix, were observed by atomic force microscopy. The size of hard segment domains decreased with decreasing film thickness, and possibility of specific orientation of the hard segment chains was exhibited for both systems. These results are due to decreasing space for the formation of the microphase-separated structure.

Archetypal structure of ultrathin alumina films: Grazing-incidence x-ray diffraction on Ni(111)

NASA Astrophysics Data System (ADS)

Prévot, G.; Le Moal, S.; Bernard, R.; Croset, B.; Lazzari, R.; Schmaus, D.

2012-05-01

We have studied by grazing-incidence x-ray diffraction the atomic structure of an ultrathin alumina film grown on Ni(111). We show that, since there is neither registry between the film and the substrate nor induced Ni relaxations, this system appears to be a prototypical freestanding oxide layer. We have been able to unambiguously determine the three-dimensional structure of the film, which consists of a substrate/Al16/O24/Al24/O28 stacking within a (18.23 × 10.53 Å) R0° unit cell. From the different Al coordinations (3/4/5) in the layer and from the precise determination of the Al-O interatomic distances, we conclude that the film structure presents some similarities with the η phase of bulk alumina, which also has a high surface/bulk ratio. The precise comparison between these two structures allows us to explain that the perfect 3 ratio between the two sides of the mesh of the film is governed by the stacking of the two central planes, combining oxygen close-packed atoms below Al atoms in tetrahedral or pyramidal positions. Moreover, Al atoms at the interface plane of the ultrathin film adopt a quasitrihedral configuration, which confirms that, in the alumina η phase, Al atoms with such a coordination are located near the surface of the nanocrystals. The atomic structure is also very close to the one first proposed by Kresse [G. Kresse, M. Schmid, E. Napetschnig, M. Shishkin, L. Köhler, and P. Varga, ScienceSCIEAS0036-807510.1126/science.1107783 308, 1440 (2005)] for alumina films on NiAl(110). This strongly suggests that this atomic model, within small variations, can be extended to ultrathin alumina film on numerous other metal substrates and may be quasi-intrinsic to a freestanding layer rather than governed by the interactions between the film and the substrate.

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu Shiyang; Nakajima, Anri; Ohashi, Takuo

2005-12-01

The interface trap generation ({delta}N{sub it}) and fixed oxide charge buildup ({delta}N{sub ot}) under negative bias temperature instability (NBTI) of p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for {delta}N{sub it} and {delta}N{sub ot}. At the earlier stress times, {delta}N{sub it} dominates the threshold voltage shift ({delta}V{sub th}) and {delta}N{sub ot} is negligible. With increasing stress time, the rate of increase of {delta}N{sub it} decreases continuously, showing a saturating trend for longer stress times, while {delta}N{submore » ot} still has a power-law dependence on stress time so that the relative contribution of {delta}N{sub ot} increases. The thermal activation energy of {delta}N{sub it} and the NBTI lifetime of pMOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.« less

Diffractive intermediate layer enables broadband light trapping for high efficiency ultrathin c-Si tandem cells

NASA Astrophysics Data System (ADS)

Li, Guijun; Ho, Jacob Y. L.; Li, He; Kwok, Hoi-Sing

2014-06-01

Light management through the intermediate reflector in the tandem cell configuration is of great practical importance for achieving high stable efficiency and also low cost production. So far, however, the intermediate reflectors employed currently are mainly focused on the light absorption enhancement of the top cell. Here, we present a diffractive intermediate layer that allows for light trapping over a broadband wavelength for the ultrathin c-Si tandem solar cell. Compared with the standard intermediate reflector, this nanoscale architectural intermediate layer results in a 35% and 21% remarkable enhancement of the light absorption in the top (400-800 nm) and bottom (800-1100 nm) cells simultaneously, and ultrathin c-Si tandem cells with impressive conversion efficiency of 13.3% are made on the glass substrate.

Quantum-well states in thin Ag films grown on the Ga/Si(111)-√{3 }×√{3 } surface

NASA Astrophysics Data System (ADS)

Starfelt, S.; Zhang, H. M.; Johansson, L. S. O.

2018-05-01

Silver thin films have been created by room temperature deposition on a Ga/Si(111)-√{3 }×√{3 } surface and their valence band structures and core levels have been measured by angle-resolved photoelectron spectroscopy (ARPES). Discrete quantum-well states (QWSs) quantized from the Ag s p valence band are observed already at 3 monolayers (ML). The characteristics of the QWSs have been examined in the phase accumulation model for thicknesses between 3 and 12 ML. The phase shift and QWSs binding energies dependence with Ag film thicknesses have all been consistently derived. In-plane energy dispersion follows a parabolic curve, and the effective mass of the QWSs shows an increasing trend with binding energies as well as with reduced film thicknesses. Furthermore, the ARPES measurements reveal umklapp mediated QWSs around the M ¯ points of the Si(111) 1 ×1 surface Brillouin zone. The study confirms that the Ga/Si(111)-√{3 }×√{3 } surface is a good substrate for growing uniform ultrathin Ag films in room temperature conditions.

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

NASA Astrophysics Data System (ADS)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Ultrathin pyrolytic carbon films on a magnetic substrate

NASA Astrophysics Data System (ADS)

Umair, Ahmad; Raza, Tehseen Z.; Raza, Hassan

2016-07-01

We report the growth of ultrathin pyrolytic carbon (PyC) films on nickel substrate by using chemical vapor deposition at 1000 °C under methane ambience. We find that the ultra-fast cooling is crucial for PyC film uniformity by controlling the segregation of carbon on nickel. We characterize the in-plane crystal size of the PyC film by using Raman spectroscopy. The Raman peaks at ˜1354 and ˜1584 cm-1 wavenumbers are used to extract the D and G bands. The corresponding peak intensities are then used in an excitation energy dependent equation to calculate the in-plane crystal size. Using Raman area mapping, the mean value of in-plane crystal size over an area of 100 μm × 100 μm is about 22.9 nm with a standard deviation of about 2.4 nm.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

NASA Astrophysics Data System (ADS)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron

NASA Astrophysics Data System (ADS)

Macchi, Carlos; Bürgi, Juan; García Molleja, Javier; Mariazzi, Sebastiano; Piccoli, Mattia; Bemporad, Edoardo; Feugeas, Jorge; Sennen Brusa, Roberto; Somoza, Alberto

2014-08-01

It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morphologies, the quality of the film-substrate interfaces and the open volume defects. A study of the depth profiling and morphological characterization of AlN thin films deposited on two types of Si substrates is presented. Thin films of thicknesses between 200 and 400 nm were deposited during two deposition times using a reactive sputter magnetron. These films were characterized by means of X-ray diffraction and imaging techniques (SEM and TEM). To analyze the composition of the films, energy dispersive X-ray spectroscopy was applied. Positron annihilation spectroscopy, specifically Doppler broadening spectroscopy, was used to gather information on the depth profiling of open volume defects inside the films and the AlN films-Si substrate interfaces. The results are interpreted in terms of the structural changes induced in the films as a consequence of changes in the deposition time (i.e., thicknesses) and of the orientation of the substrates.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE PAGES

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel; ...

2017-11-16

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Modeling the mechanical properties of ultra-thin polymer films [Structural modeling of films of atomic scale thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Espinosa-Loza, Francisco; Stadermann, Michael; Aracne-Ruddle, Chantel

A modeling method to extract the mechanical properties of ultra-thin films (10–100 nm thick) from experimental data generated by indentation of freestanding circular films using a spherical indenter is presented. The relationship between the mechanical properties of the film and experimental parameters including load, and deflection are discussed in the context of a constitutive material model, test variables, and analytical approaches. As a result, elastic and plastic regimes are identified by comparison of finite element simulation and experimental data.

Ultrathin free-standing graphene oxide film based flexible touchless sensor

NASA Astrophysics Data System (ADS)

Liu, Lin; Wang, Yingyi; Li, Guanghui; Qin, Sujie; Zhang, Ting

2018-01-01

Ultrathin free-standing graphene oxide (GO) films were fabricated by vacuum filtration method assisted with Ni(OH)2 nanosheets as the sacrifice layer. The surface of the obtained GO film is very clean as the Ni(OH)2 nanosheets can be thoroughly etched by HCl. The thickness of the GO films can be well-controlled by changing the volume of GO dispersion, and the thinnest GO film reached ~12 nm. As a novel and transparent dielectric material, the GO film has been applied as the dielectric layer for the flexible touchless capacitive sensor which can effectively distinguish the approaching of an insulator or a conductor. Project supported by the National Natural Science Foundation of China (No. 61574163) and the Foundation Research Project of Jiangsu Province (Nos. BK20160392, BK20170008).

Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

NASA Astrophysics Data System (ADS)

Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2018-02-01

The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

PubMed

Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

2018-06-06

We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.

Germanium growth on electron beam lithography patterned Si3N4/Si(001) substrate using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sarkar, Subhendu Sinha; Katiyar, Ajit K.; Sarkar, Arijit; Dhar, Achintya; Rudra, Arun; Khatri, Ravinder K.; Ray, Samit Kumar

2018-04-01

It is important to investigate the growth dynamics of Ge adatoms under different surface stress regimes of the patterned dielectric to control the selective growth of self-assembled Ge nanostructures on silicon. In the present work, we have studied the growth of Ge by molecular beam epitaxy on nanometer scale patterned Si3N4/Si(001) substrates generated using electron beam lithography. The pitch of the patterns has been varied to investigate its effect on the growth of Ge in comparison to un-patterned Si3N4. For the patterned Si3N4 film, Ge did not desorbed completely from the Si3N4 film and hence no site selective growth pattern is observed. Instead, depending upon the pitch, Ge growth has occurred in different growth modes around the openings in the Si3N4. For the un-patterned substrate, the morphology exhibits the occurrence of uniform 3D clustering of Ge adatoms on Si3N4 film. This variation in the growth modes of Ge is attributed to the variation of residual stress in the Si3N4 film for different pitch of holes, which has been confirmed theoretically through Comsol Multiphysics simulation. The variation in stress for different pitches resulted in modulation of surface energy of the Si3N4 film leading to the different growth modes of Ge.

Si-rich W silicide films composed of W-atom-encapsulated Si clusters deposited using gas-phase reactions of WF6 with SiH4.

PubMed

Okada, Naoya; Uchida, Noriyuki; Kanayama, Toshihiko

2016-02-28

We formed Si-rich W silicide films composed of Sin clusters, each of which encapsulates a W atom (WSi(n) clusters with 8 < n ≤ ∼ 12), by using a gas-phase reaction between WF6 and SiH4 in a hot-wall reactor. The hydrogenated WSi(n)H(x) clusters with reduced F concentration were synthesized in a heated gas phase and subsequently deposited on a substrate heated to 350-420 °C, where they dehydrogenated and coalesced into the film. Under a gas pressure of SiH4 high enough for the WSi(n)H(x) reactant to collide a sufficient number of times with SiH4 molecules before reaching the substrate, the resulting film was composed of WSi(n) clusters with a uniform n, which was determined by the gas temperature. The formed films were amorphous semiconductors with an optical gap of ∼0.8-1.5 eV and an electrical mobility gap of ∼0.05-0.12 eV, both of which increased as n increased from 8 to 12. We attribute this dependence to the reduction of randomness in the Si network as n increased, which decreased the densities of band tail states and localized states.

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

NASA Astrophysics Data System (ADS)

Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

2017-11-01

The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

Ultrathin Composite Polymeric Membranes for CO2 /N2 Separation with Minimum Thickness and High CO2 Permeance.

PubMed

Benito, Javier; Sánchez-Laínez, Javier; Zornoza, Beatriz; Martín, Santiago; Carta, Mariolino; Malpass-Evans, Richard; Téllez, Carlos; McKeown, Neil B; Coronas, Joaquín; Gascón, Ignacio

2017-10-23

The use of ultrathin films as selective layers in composite membranes offers significant advantages in gas separation for increasing productivity while reducing the membrane size and energy costs. In this contribution, composite membranes have been obtained by the successive deposition of approximately 1 nm thick monolayers of a polymer of intrinsic microporosity (PIM) on top of dense membranes of the ultra-permeable poly[1-(trimethylsilyl)-1-propyne] (PTMSP). The ultrathin PIM films (30 nm in thickness) demonstrate CO 2 permeance up to seven times higher than dense PIM membranes using only 0.04 % of the mass of PIM without a significant decrease in CO 2 /N 2 selectivity. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Understanding Metal-Insulator transitions in ultra-thin films of LaNiO3

NASA Astrophysics Data System (ADS)

Ravichandran, Jayakanth; King, Philip D. C.; Schlom, Darrell G.; Shen, Kyle M.; Kim, Philip

2014-03-01

LaNiO3 (LNO) is a bulk paramagnetic metal and a member of the family of RENiO3 Nickelates (RE = Rare Earth Metals), which is on the verge of the metal-insulator transition. Ultra-thin films of LNO has been studied extensively in the past and due to its sensitivity to disorder, the true nature of the metal-insulator transition in these films have been hard to decipher. We grow high quality ultra-thin films of LNO using reactive molecular beam epitaxy (MBE) and use a combination of ionic liquid gating and magneto-transport measurements to understand the nature and tunability of metal-insulator transition as a function of thickness for LNO. The underlying mechanisms for the transition are discussed in the framework of standard transport models. These results are discussed in the light of other Mott insulators such as Sr2IrO4, where we have performed similar measurements around the insulating state.

Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, H. W.; Yang, J.; Li, Y. H.

2015-03-02

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

Structural phase diagram for ultra-thin epitaxial Fe 3O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alraddadi, S.; Hines, W.; Yilmaz, T.

2016-02-19

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3O 4) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED)more » and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.« less

Influence of Si concentration on the magnetization dynamics in as-sputtered FeCoSiN thin films at high frequencies

NASA Astrophysics Data System (ADS)

Xu, Feng; Chen, Xin; Ma, Yungui; Phuoc, N. N.; Zhang, Xiaoyu; Ong, C. K.

2008-10-01

In this work, the high-frequency magnetic permeability spectra of as-sputtered FeCoSiN films with various Si concentrations were investigated. The soft magnetic properties with an induced in-plane uniaxial anisotropy can only be obtained within some composition ranges because of the formation of different granular microstructures. The permeability spectra measured without any external fields (He) were well fitted based on the phenomenological Landau-Lifshitz-Gilbert equation. Results show that with the increase in Si concentration, the saturated magnetization 4πMs, the resonance frequency fr, the permeability μ, and the qualify factor Q values decrease, while the damping coefficient α and resonant frequency linewidth Δf increase. The increase in Gilbert damping coefficient α or G is ascribed to the increase in mosaicity or magnetic ripples with higher volume proportion of Si-rich matrix. The investigations on Δf-He relations indicate the extrinsic damping contribution from the two-magnon scattering in FeCoSiN, which is suggested to be due to the change in the granular microstructures compared with FeCoN.

A repeated halving approach to fabricate ultrathin single-walled carbon nanotube films for transparent supercapacitors.

PubMed

Niu, Zhiqiang; Zhou, Weiya; Chen, Jun; Feng, Guoxing; Li, Hong; Hu, Yongsheng; Ma, Wenjun; Dong, Haibo; Li, Jinzhu; Xie, Sishen

2013-02-25

Ultrathin SWCNT transparent and conductive films on flexible and transparent substrates are prepared via repeatedly halving the directly grown SWCNT films and flexible and transparent supercapacitors with excellent performance were fabricated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

2018-05-01

GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuru, Yener; Welzel, Udo; Mittemeijer, Eric J.

2014-12-01

This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

The influence of the surface parameter changes onto the phonon states in ultrathin crystalline films

NASA Astrophysics Data System (ADS)

Šetrajčić, Jovan P.; Ilić, Dušan I.; Jaćimovski, Stevo K.

2018-04-01

In this paper, we have analytically investigated how the changes in boundary surface parameters influence the phonon dispersion law in ultrathin films of the simple cubic crystalline structure. Spectra of possible phonon states are analyzed using the method of two-time dependent Green's functions and for the diverse combination of boundary surface parameters, this problem was presented numerically and graphically. It turns out that for certain values and combinations of parameters, displacement of dispersion branches outside of bulk zone occurs, leading to the creation of localized phonon states. This fact is of great importance for the heat removal, electrical conductivity and superconducting properties of ultrathin films.

Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

NASA Astrophysics Data System (ADS)

Takagishi, Hideyuki; Masuda, Takashi; Yamazaki, Ken; Shimoda, Tatsuya

2018-01-01

Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10-3Ω ṡ cm, which is comparable to the specific resistance of flat n-type poly-Si films.

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Ultra-high current density thin-film Si diode

DOEpatents

Wang; Qi

2008-04-22

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

NASA Astrophysics Data System (ADS)

Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

2006-04-01

We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tombak, Ahmet, E-mail: tahmet@yahoo.com; Özaydin, C.; Boğa, M.

2016-03-25

Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio,more » barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm{sup 2} illumination conditions.« less

Precisely Controlled Ultrathin Conjugated Polymer Films for Large Area Transparent Transistors and Highly Sensitive Chemical Sensors.

PubMed

Khim, Dongyoon; Ryu, Gi-Seong; Park, Won-Tae; Kim, Hyunchul; Lee, Myungwon; Noh, Yong-Young

2016-04-13

A uniform ultrathin polymer film is deposited over a large area with molecularlevel precision by the simple wire-wound bar-coating method. The bar-coated ultrathin films not only exhibit high transparency of up to 90% in the visible wavelength range but also high charge carrier mobility with a high degree of percolation through the uniformly covered polymer nanofibrils. They are capable of realizing highly sensitive multigas sensors and represent the first successful report of ethylene detection using a sensor based on organic field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

NASA Astrophysics Data System (ADS)

Kar, Debjit; Das, Debajyoti

2016-07-01

With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Epitaxy of Fe/Cu/Si(1 1 1) ultrathin films: an Auger electron diffraction study

NASA Astrophysics Data System (ADS)

Castrucci, P.; Gunnella, R.; Bernardini, R.; Montecchiari, A.; Carboni, R.; De Crescenzi, M.

2001-06-01

Epitaxial Fe films, with thickness in the range between 1 and 50 ML (monolayer, ML), were grown in ultrahigh vacuum conditions on the 7×7 reconstructed (1 1 1)-Si surface. The films were evaporated on a Cu thick buffer layer to avoid iron silicides formation. Auger electron diffraction (AED) technique has been used to investigate the growth of the pseudomorphic film of fcc γ-Fe(1 1 1) and the successive growth of bcc Fe(1 1 0) domains in the Kurdjumov-Sachs orientation. The early stages of growth have been carefully investigated through AED to assess the pseudomorphism of iron γ-phase. AED patterns clearly show the presence of diffraction features that are fingerprints of the existence of a few bcc arranged atomic structures even for 1 ML iron coverage.

Electron transport in ultra-thin films and ballistic electron emission microscopy

NASA Astrophysics Data System (ADS)

Claveau, Y.; Di Matteo, S.; de Andres, P. L.; Flores, F.

2017-03-01

We have developed a calculation scheme for the elastic electron current in ultra-thin epitaxial heterostructures. Our model uses a Keldysh’s non-equilibrium Green’s function formalism and a layer-by-layer construction of the epitaxial film. Such an approach is appropriate to describe the current in a ballistic electron emission microscope (BEEM) where the metal base layer is ultra-thin and generalizes a previous one based on a decimation technique appropriated for thick slabs. This formalism allows a full quantum mechanical description of the transmission across the epitaxial heterostructure interface, including multiple scattering via the Dyson equation, which is deemed a crucial ingredient to describe interfaces of ultra-thin layers properly in the future. We introduce a theoretical formulation needed for ultra-thin layers and we compare with results obtained for thick Au(1 1 1) metal layers. An interesting effect takes place for a width of about ten layers: a BEEM current can propagate via the center of the reciprocal space (\\overlineΓ ) along the Au(1 1 1) direction. We associate this current to a coherent interference finite-width effect that cannot be found using a decimation technique. Finally, we have tested the validity of the handy semiclassical formalism to describe the BEEM current.

Composite membranes from photochemical synthesis of ultrathin polymer films

NASA Astrophysics Data System (ADS)

Liu, Chao; Martin, Charles R.

1991-07-01

THERE has recently been a resurgence of interest in synthetic membranes and membrane-based processes1-12. This is motivated by a wide variety of technological applications, such as chemical separations1-7, bioreactors and sensors8,9, energy conversion10,11 and drug-delivery systems12. Many of these technologies require the ability to prepare extremely thin, defect-free synthetic (generally polymeric) films, which are supported on microporous supports to form composite membranes. Here we describe a method for producing composite membranes of this sort that incorporate high-quality polymer films less than 50-nm thick. The method involves interfacial photopolymerization of a thin polymer film on the surface of the microporous substrate. We have been able to use this technique to synthesize a variety of functionalized ultrathin films based on electroactive, photoactive and ion-exchange polymers. We demonstrate the method here with composite membranes that show exceptional gas-transport properties.

Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/ p-SiOC:H ultralow- k dielectric integration

NASA Astrophysics Data System (ADS)

Jiao, Guohua; Liu, Bo; Li, Qiran

2015-08-01

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/ p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/ p-SiOC:H/Si, even annealing up to 500 °C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/ p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 °C, indicating its potential application in the advanced barrierless Cu metallization.

Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

NASA Astrophysics Data System (ADS)

Torchynska, T.; Khomenkova, L.; Slaoui, A.

2018-04-01

Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.

Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

NASA Astrophysics Data System (ADS)

Torchynska, T.; Khomenkova, L.; Slaoui, A.

2018-07-01

Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

NASA Astrophysics Data System (ADS)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Chang, Han-Soo; Lee, Sung-Nam; Lee, Myung Sun; Reddy, V. Rajagopal; Choi, Chel-Jong

2017-11-01

Au-CuPc nanocomposite films were prepared by simultaneous evaporation of Au and CuPc with various Au and CuPc concentrations. Microstructural analysis of Au-CuPc films revealed elongated Au cluster formation from isolated Au nanoclusters with increasing Au concentration associated with coalescence of Au clusters. Au-CuPc films with different compositions were employed as interlayer in Al/n-Si Schottky diode. Barrier height and series resistance of the Al/n-Si Schottky diode with Au-CuPc interlayer decreased with increasing Au concentration. This could be associated with the enhancement of electron tunneling between neighboring clusters due to decrease in spacing of Au clusters and formation of conducting paths through the composite material. Interface state density of the Al/n-Si Schottky diode with Au-CuPc interlayer increased with increasing Au concentration. This might be because the inclusion of metal decreases the crystallinity and crystal size of the polymer matrix accompanied by the formation of local defect sites at the places of metal nucleation.

Transport properties of epitaxial films for superconductor NbN and half-metallic Heusler alloy Co2MnSi under high magnetic fields

NASA Astrophysics Data System (ADS)

Shigeta, Iduru; Kubota, Takahide; Sakuraba, Yuya; Kimura, Shojiro; Awaji, Satoshi; Takanashi, Koki; Hiroi, Masahiko

2018-05-01

Transport properties were investigated for epitaxial films of superconductor NbN and half-metallic Heusler alloy Co2MnSi under high magnetic fields up to 17 T. The superconducting transition temperature Tc of NbN/Co2MnSi/Au trilayer films was determined to be 16.1 K in the absence of magnetic field. Temperature dependence of the resistivity ρ (T) was measured in both magnetic fields parallel and perpendicular to the surface of NbN/Co2MnSi/Au trilayer films. The activation energy U0 (H) for vortex motion of the trilayer films in both magnetic fields was well fitted above 5 T by the similar model with the exponents in the field dependence of the pinning force density. From the resistivity ρ (T) measurements under high magnetic fields, the upper critical field Hc2 (0) at 0 K was also deduced to be μ0 Hc2 ∥ (0) = 23.2 T for the parallel magnetic filed and μ0 Hc2 ⊥ (0) = 15.8 T for the perpendicular magnetic field, respectively. The experimental results under magnetic fields revealed the superconductivity of the NbN layer was affected by the interplay between the superconducting NbN layer and the half-metallic Co2MnSi layer.

Development of an ultra-thin film comprised of a graphene membrane and carbon nanotube vein support.

PubMed

Lin, Xiaoyang; Liu, Peng; Wei, Yang; Li, Qunqing; Wang, Jiaping; Wu, Yang; Feng, Chen; Zhang, Lina; Fan, Shoushan; Jiang, Kaili

2013-01-01

Graphene, exhibiting superior mechanical, thermal, optical and electronic properties, has attracted great interest. Considering it being one-atom-thick, and the reduced mechanical strength at grain boundaries, the fabrication of large-area suspended chemical vapour deposition graphene remains a challenge. Here we report the fabrication of an ultra-thin free-standing carbon nanotube/graphene hybrid film, inspired by the vein-membrane structure found in nature. Such a square-centimetre-sized hybrid film can realize the overlaying of large-area single-layer chemical vapour deposition graphene on to a porous vein-like carbon nanotube network. The vein-membrane-like hybrid film, with graphene suspended on the carbon nanotube meshes, possesses excellent mechanical performance, optical transparency and good electrical conductivity. The ultra-thin hybrid film features an electron transparency close to 90%, which makes it an ideal gate electrode in vacuum electronics and a high-performance sample support in transmission electron microscopy.

Electron transport in nanocrystalline SiC films obtained by direct ion deposition

NASA Astrophysics Data System (ADS)

Kozlovskyi, A.; Semenov, A.; Skorik, S.

2016-12-01

Electrical conductivity of nanocrystalline SiC films obtained by direct ion deposition was investigated within the temperature interval from 2 to 770 K. It were investigated the samples of films with 3С-SiC polytype structure and the heteropolytype films formed by layers of different polytypes SiC (3C-SiC/21R-SiC, 21R-SiC/27R-SiC, 3C-SiC/15R-SiC). The films had n-type conductivity that ensured a small excess of silicon ions. The thermally activated character of electron transport in the 3С-SiC polytype films was established. In the heteropolytype films the temperature dependence of the electrical resistance was described by the relation R(T) = R0 × exp[-kT/E0]. It was shown that the charge transport mechanism in the heteropolytype samples is electron tunneling through potential barriers formed by the conduction band offset in the contact region of the heterojunction. Tunnel charge transport occurs due to the presence of discrete energy states in the forbidden band caused the dimensional quantization.

FABRICATION AND OPTOELECTRONIC PROPERTIES OF MgxZn1-xO ULTRATHIN FILMS BY LANGMUIR-BLODGETT TECHNOLOGY

NASA Astrophysics Data System (ADS)

Tang, Dongyan; Feng, Qian; Jiang, Enying; He, Baozhu

2012-08-01

By transferring MgxZn1-xO sol and stearic acid onto a hydrophilic silicon wafer or glass plate, the Langmuir-Blodgett (LB) multilayers of MgxZn1-xO (x:0, 0.2, 0.4) were deposited. After calcinations at 350°C for 0.5 h and at 500°C for 3 h, MgxZn1-xO ultrathin films were fabricated. The optimized parameters for monolayer formation and multilayer deposition were determined by the surface pressure-surface (Π-A) area and the transfer coefficient, respectively. The expended areas of stearic acid with MgxZn1-xO sols under Π-A isotherms inferred the interaction of stearic acid with MgxZn1-xO sols during the formation of monolayer at air-water interface. X-ray diffraction (XRD) was used to determine the crystal structures of MgxZn1-xO nanoparticles and ultrathin films. The surface morphologies of MgxZn1-xO ultrathin films were observed by scanning probe microscopy (AFM). And the optoelectronic properties of MgxZn1-xO were detected and discussed based on photoluminescence (PL) spectra.

Modeling of UV laser-induced patterning of ultrathin Co films on bulk SiO2: verification of short- and long-range ordering mechanisms

NASA Astrophysics Data System (ADS)

Trice, Justin; Favazza, Christopher; Kalyanaraman, Ramki; Sureshkumar, R.

2006-03-01

Irradiating ultrathin Co films (1 to 10 nm) by a short-pulsed UV laser leads to pattern formation with both short- and long-range order (SRO, LRO). Single beam irradiation produces SRO, while two-beam interference irradiation produces a quasi-2D arrangement of nanoparticles with LRO and SRO. The pattern formation primarily occurs in the molten phase. An estimate of the thermal behavior of the film/substrate composite following a laser pulse is presented. The thermal behavior includes the lifetime of the liquid phase and the thermal gradient during interference heating. Based on this evidence, the SRO is attributed to spinodal dewetting of the film while surface tension gradients induced by the laser interference pattern appear to influence LRO [1]. [1] C.Favazza, J.Trice, H.Krishna, R.Sureshkumar, and R.Kalyanaraman, unpublished.

Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

PubMed

Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

2011-05-13

The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

Structural and magnetic properties of nanocomposite iron-containing SiCxNy films

NASA Astrophysics Data System (ADS)

Pushkarev, R. V.; Fainer, N. I.; Maurya, K. K.

2017-02-01

New ferromagnetic films with composition SiCxNyFez were synthesized using chemical vapor deposition technique. Films were deposited using ferrocene, 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and hydrogen gaseous mixture. Chemical and phase composition of the films were studied by FTIR, Raman spectroscopy and X-ray diffraction with grazing incidence (GI-XRD). FTIR spectra analysis confirmed the existence of Si-C and Si-N bonds. Graphite inclusions and amorphous carbon were determined by Raman spectra analysis. The surface of the SiCxNyFez films studied by SEM is covered by nanocrystallites of iron oxide Fe3O4 phase. The main purpose of GI-XRD analysis is to describe the layered structure of the films in detail. It was shown by GI-XRD study, that phase composition of the SiCxNyFez films varies from iron oxide Fe3O4 to iron silicide Fe3Si and silicon carbide SiC with the deposition temperature growing. It was established, that SiCxNyFez films are perspective for application in the spintronic field.

n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

PubMed

Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

2016-11-02

Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung

2016-01-15

It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films preparedmore » by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.« less

Dynamic XPS measurements of ultrathin polyelectrolyte films containing antibacterial Ag–Cu nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taner-Camcı, Merve; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr

Ultrathin films consisting of polyelectrolyte layers prepared by layer-by-layer deposition technique and containing also Ag and Cu nanoparticles exhibit superior antibacterial activity toward Escherichia coli. These films have been investigated with XPS measurements under square wave excitation at two different frequencies, in order to further our understanding about the chemical/physical nature of the nanoparticles. Dubbed as dynamical XPS, such measurements bring out similarities and differences among the surface structures by correlating the binding energy shifts of the corresponding XPS peaks. Accordingly, it is observed that the Cu2p, Ag3d of the metal nanoparticles, and S2p of cysteine, the stabilizer and themore » capping agent, exhibit similar shifts. On the other hand, the C1s, N1s, and S2p peaks of the polyelectrolyte layers shift differently. This finding leads us the claim that the Ag and Cu atoms are in a nanoalloy structure, capped with cystein, as opposed to phase separated entities.« less

Spin accumulation in disordered topological insulator ultrathin films

NASA Astrophysics Data System (ADS)

Siu, Zhuo Bin; Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

2017-08-01

Topological insulator (TI) ultrathin films differ from the more commonly studied semi-infinite bulk TIs in that the former possess both top and bottom surfaces where the surface states localized at different surfaces can couple to one another across the finite thickness of the film. In the presence of an in-plane magnetization, the TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a Bi2Se3 TI thin film system with an in-plane magnetization and numerically calculate the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo formula calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization and in the out of plane direction are antisymmetric in Fermi energy around the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation.

Development of hot-electron THz bolometric mixers using MgB2 thin films

NASA Astrophysics Data System (ADS)

Cunnane, Daniel; Kawamura, Jonathan; Karasik, Boris S.; Wolak, Matthaeus A.; Xi, X. X.

2014-07-01

Terahertz high-resolution spectroscopy of interstellar molecular clouds greatly relies on hot-electron superconducting bolometric (HEB) mixers. Current state-of-the-art receivers use mixer devices made from ultrathin (~ 3-5 nm) films of NbN with critical temperature ~ 9-11 K. Such mixers have been deployed on a number of groundbased, suborbital, and orbital platforms including the HIFI instrument on the Hershel Space Observatory. Despite its good sensitivity and well-established fabrication process, the NbN HEB mixer suffers from the narrow intermediate frequency (IF) bandwidth ~ 2-3 GHz and is limited to operation at liquid Helium temperature. As the heterodyne receivers are now trending towards "high THz" frequencies, the need in a larger IF bandwidth becomes more pressing since the same velocity resolution for a Doppler shifted line at 5 THz requires a 5-times greater IF bandwidth than at 1 THz. Our work is focusing on the realization of practical HEB mixers using ultrathin (10-20 nm) MgB2 films. They are prepared using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process yielding ultrathin films with critical temperature ~ 37-39 K. The expectation is that the combination of small thickness, high acoustic phonon transparency at the interface with the substrate, and very short electron-phonon relaxation time may lead to IF bandwidth ~ 10 GHz or even higher. SiC continues to be the most favorable substrate for MgB2 growth and as a result, a study has been conducted on the transparency of SiC at THz frequencies. FTIR measurements show that semi-insulating SiC substrates are at least as transparent as Si up to 2.5 THz. Currently films are passivated using a thin (10 nm) SiO2 layer which is deposited ex-situ via RF magnetron sputtering. Micron-sized spiral antenna-coupled HEB mixers have been fabricated using MgB2 films as thin as 10 nm. Fabrication was done using contact UV lithography and Ar Ion milling, with E-beam evaporated Au films deposited for the

Metastability of a-SiOx:H thin films for c-Si surface passivation

NASA Astrophysics Data System (ADS)

Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

2017-01-01

The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

Conformal surface plasmons propagating on ultrathin and flexible films

PubMed Central

Shen, Xiaopeng; Cui, Tie Jun; Martin-Cano, Diego; Garcia-Vidal, Francisco J.

2013-01-01

Surface plasmon polaritons (SPPs) are localized surface electromagnetic waves that propagate along the interface between a metal and a dielectric. Owing to their inherent subwavelength confinement, SPPs have a strong potential to become building blocks of a type of photonic circuitry built up on 2D metal surfaces; however, SPPs are difficult to control on curved surfaces conformably and flexibly to produce advanced functional devices. Here we propose the concept of conformal surface plasmons (CSPs), surface plasmon waves that can propagate on ultrathin and flexible films to long distances in a wide broadband range from microwave to mid-infrared frequencies. We present the experimental realization of these CSPs in the microwave regime on paper-like dielectric films with a thickness 600-fold smaller than the operating wavelength. The flexible paper-like films can be bent, folded, and even twisted to mold the flow of CSPs. PMID:23248311

In-situ observation of equilibrium transitions in Ni films; agglomeration and impurity effects.

PubMed

Thron, Andrew M; Greene, Peter; Liu, Kai; van Benthem, Klaus

2014-02-01

Dewetting of ultra-thin Ni films deposited on SiO2 layers was observed, in cross-section, by in situ scanning transmission electron microscopy. Holes were observed to nucleate by voids which formed at the Ni/SiO2 interface rather than at triple junctions at the free surface of the Ni film. Ni islands were observed to retract, in attempt to reach equilibrium on the SiO2 layer. SiO2 layers with 120 nm thickness were found to limit in situ heating experiments due to poor thermal conductivity of SiO2. The formation of graphite was observed during the agglomeration of ultra-thin Ni films. Graphite was observed to wet both the free surface and the Ni/SiO2 interface of the Ni islands. Cr forms surface oxide layers on the free surface of the SiO2 layer and the Ni islands. Cr does not prevent the dewetting of Ni, however it will likely alter the equilibrium shape of the Ni islands. © 2013 Published by Elsevier B.V.

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

PubMed

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-13

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

NASA Astrophysics Data System (ADS)

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-01

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of 80 and 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Polarity compensation in ultra-thin films of complex oxides: The case of a perovskite nickelate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Middey, S.; Rivero, P.; Meyers, D.

2014-10-29

In this study, we address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO 3 on the band insulator SrTiO 3 along the pseudo cubic [111] direction. While in general the metallic LaNiO 3 film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, andmore » synchrotron based resonant X-ray spectroscopy reveal the formation of a chemical phase La 2Ni 2O 5 (Ni 2+) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO 3/SrTiO 3 interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.« less

Metal Induced Growth of Si Thin Films and NiSi Nanowires

DTIC Science & Technology

2010-02-25

Zinc Oxide Over MIG Silicon- We have been studying the formation of ZnO films by RF sputtering. Part of this study deals with...about 50 nm. 15. SUBJECT TERMS Thin film silicon, solar cells, thin film transistors , nanowires, metal induced growth 16. SECURITY CLASSIFICATION...to achieve, µc-Si is more desirable than a-Si due to its increased mobility. Thin film µc-Si is also a popular material for thin film transistors

Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Ruifeng; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201; Cao, Hongtao

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore » 0.37 to 2.07 cm{sup 2} V{sup −1} s{sup −1}, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 10{sup 3}. The achievement of this ZnSnN{sub 2}-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN{sub 2} material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.« less

Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

NASA Astrophysics Data System (ADS)

Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

2015-12-01

Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

Omnidirectional, broadband light absorption using large-area, ultrathin lossy metallic film coatings

NASA Astrophysics Data System (ADS)

Li, Zhongyang; Palacios, Edgar; Butun, Serkan; Kocer, Hasan; Aydin, Koray

2015-10-01

Resonant absorbers based on nanostructured materials are promising for variety of applications including optical filters, thermophotovoltaics, thermal emitters, and hot-electron collection. One of the significant challenges for such micro/nanoscale featured medium or surface, however, is costly lithographic processes for structural patterning which restricted from industrial production of complex designs. Here, we demonstrate lithography-free, broadband, polarization-independent optical absorbers based on a three-layer ultrathin film composed of subwavelength chromium (Cr) and oxide film coatings. We have measured almost perfect absorption as high as 99.5% across the entire visible regime and beyond (400-800 nm). In addition to near-ideal absorption, our absorbers exhibit omnidirectional independence for incidence angle over ±60 degrees. Broadband absorbers introduced in this study perform better than nanostructured plasmonic absorber counterparts in terms of bandwidth, polarization and angle independence. Improvements of such “blackbody” samples based on uniform thin-film coatings is attributed to extremely low quality factor of asymmetric highly-lossy Fabry-Perot cavities. Such broadband absorber designs are ultrathin compared to carbon nanotube based black materials, and does not require lithographic processes. This demonstration redirects the broadband super absorber design to extreme simplicity, higher performance and cost effective manufacturing convenience for practical industrial production.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos,more » we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.« less

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

PubMed

Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

2017-11-01

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Acoustic Wave Monitor for Deposition and Analysis of Ultra-Thin Films

NASA Technical Reports Server (NTRS)

Hines, Jacqueline H. (Inventor)

2015-01-01

A surface acoustic wave (SAW) based thin film deposition monitor device and system for monitoring the deposition of ultra-thin films and nanomaterials and the analysis thereof is characterized by acoustic wave device embodiments that include differential delay line device designs, and which can optionally have integral reference devices fabricated on the same substrate as the sensing device, or on a separate device in thermal contact with the film monitoring/analysis device, in order to provide inherently temperature compensated measurements. These deposition monitor and analysis devices can include inherent temperature compensation, higher sensitivity to surface interactions than quartz crystal microbalance (QCM) devices, and the ability to operate at extreme temperatures.

Experimental study of interfacial fracture toughness in a SiN(x)/PMMA barrier film.

PubMed

Kim, Yongjin; Bulusu, Anuradha; Giordano, Anthony J; Marder, Seth R; Dauskardt, Reinhold; Graham, Samuel

2012-12-01

Organic/inorganic multilayer barrier films play an important role in the semihermetic packaging of organic electronic devices. With the rise in use of flexible organic electronics, there exists the potential for mechanical failure due to the loss of adhesion/cohesion when exposed to harsh environmental operating conditions. Although barrier performance has been the predominant metric for evaluating these encapsulation films, interfacial adhesion between the organic/inorganic barrier films and factors that influence their mechanical strength and reliability has received little attention. In this work, we present the interfacial fracture toughness of a model organic/inorganic multilayer barrier (SiN(x)-PMMA). Data from four point bending (FPB) tests showed that adhesive failure occurred between the SiN(x) and PMMA, and that the adhesion increased from 4.8 to 10 J/m(2) by using a variety of chemical treatments to vary the surface energy at the interface. Moreover, the adhesion strength increased to 28 J/m(2) by creating strong covalent bonds at the interface. Overall, three factors were found to have the greatest impact on the interfacial fracture toughness which were (a) increasing the polar component of the surface energy, (b) creating strong covalent bonds at the organic/inorganic interface, and (c) by increasing the plastic zone size at the crack tip by increasing the thickness of the PMMA layer.

Electric field effect on exchange interaction in ultrathin Co films with ionic liquids

NASA Astrophysics Data System (ADS)

Ishibashi, Mio; Yamada, Kihiro T.; Shiota, Yoichi; Ando, Fuyuki; Koyama, Tomohiro; Kakizakai, Haruka; Mizuno, Hayato; Miwa, Kazumoto; Ono, Shimpei; Moriyama, Takahiro; Chiba, Daichi; Ono, Teruo

2018-06-01

Electric-field modulations of magnetic properties have been extensively studied not only for practical applications but also for fundamental interest. In this study, we investigated the electric field effect on the exchange interaction in ultrathin Co films with ionic liquids. The exchange coupling J was characterized from the direct magnetization measurement as a function of temperature using Pt/ultrathin Co/MgO structures. The trend of the electric field effect on J is in good agreement with that of the theoretical prediction, and a large change in J by applying a gate voltage was observed by forming an electric double layer using ionic liquids.

Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

PubMed

Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

2015-01-01

We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, M.-H., E-mail: mhliaoa@ntu.edu.tw; Chen, P.-G.

The capping stressed SiN film is one of the most important process steps for the dislocation stress memorization technique (D-SMT), which has been used widely in the current industry, for the electron mobility booster in the n-type transistor beyond the 32/28 nm technology node. In this work, we found that the different stress-level SiN capping films influence the crystal re-growth velocities along different directions including [100] and [110] directions in Ge a lot. It can be further used to optimize the dislocation angle in the transistor during the D-SMT process and then results in the largest channel stress distribution to boostmore » the device performance in the Ge n-FinFETs. Based on the theoretical calculation and experimental demonstration, it shows that the Ge three dimensional (3D) n-FinFETs device performance is improved ∼55% with the usage of +3 GPa tensile stressed SiN capping film. The channel stress and dislocation angle is ∼2.5 GPa and 30°, measured by the atomic force microscope-Raman technique and transmission electron microscopy, respectively.« less

Theoretical requirements for broadband perfect absorption of acoustic waves by ultra-thin elastic meta-films

PubMed Central

Duan, Yuetao; Luo, Jie; Wang, Guanghao; Hang, Zhi Hong; Hou, Bo; Li, Jensen; Sheng, Ping; Lai, Yun

2015-01-01

We derive and numerically demonstrate that perfect absorption of elastic waves can be achieved in two types of ultra-thin elastic meta-films: one requires a large value of almost pure imaginary effective mass density and a free space boundary, while the other requires a small value of almost pure imaginary effective modulus and a hard wall boundary. When the pure imaginary density or modulus exhibits certain frequency dispersions, the perfect absorption effect becomes broadband, even in the low frequency regime. Through a model analysis, we find that such almost pure imaginary effective mass density with required dispersion for perfect absorption can be achieved by elastic metamaterials with large damping. Our work provides a feasible approach to realize broadband perfect absorption of elastic waves in ultra-thin films. PMID:26184117

Photoluminescence properties of arsenic and boron doped Si3N4 nanocrystal embedded in SiN x O y matrix

NASA Astrophysics Data System (ADS)

Puglia, Denise; Sombrio, Guilherme; dos Reis, Roberto; Boudinov, Henri

2018-03-01

Photoluminescence emission of Si3N4 nanocrystals embedded in SiN x O y matrices was investigated. Nanocrystals were grown by annealing of silicon oxynitride films deposited by sputtering, passivated in forming gas atmosphere and implanted with boron and arsenic. Emission energy was tuned from green to ultraviolet by changing the composition of SiN x O y matrices. Structural characterization of the nanocrystals was performed by Transmission Electron Microscopy. Photoluminescence at room and low temperatures was analyzed and the results suggest that light emission originates in the interface between the nanocrystals and the matrix. The highest photoluminescence intensity at room temperature was achieved by arsenic doped silicon oxynitride films deposited with an excess of nitrogen.

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

PubMed Central

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-01-01

Abstract The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm−2 and 7 × 1014 cm−2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm−2 and 2 × 1013 cm−2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10–13 cm2 V−1 s−1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500–700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm−3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500–700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration. PMID:28567175

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

NASA Astrophysics Data System (ADS)

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-12-01

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.

Electrochemical Properties of Si Film Electrodes Containing TiNi Thin-Film Current Collectors

NASA Astrophysics Data System (ADS)

Im, Yeon-min; Noh, Jung-pil; Cho, Gyu-bong; Nam, Tea-hyun

2018-03-01

A 50.3Ti-49.7Ni thin film fabricated by DC sputtering was employed as a current collector of Si film electrode. The structural and electrochemical properties of Si/TiNi film electrode were compared with those of a Si/Cu film electrode. The TiNi film with cluster-like structures composed of B2 austenitic phase at room temperature displayed the high electrochemical stability for Li ions. The amorphous Si film deposited on the TiNi film also consisted of cluster-like structures on the surface. The Si film grown on the TiNi film current collector (Si/TiNi electrode) demonstrated a high columbic efficiency of 87% at the first cycle (363 μAh/cm2 of charge capacity and 314 μAh/cm2 of discharge capacity). The Si/TiNi electrode exhibited better electrochemical properties in terms of capacity, cycle performance, and structural stability compared to the Si electrode with a conventional Cu foil current collector.

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

NASA Astrophysics Data System (ADS)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Temporally and Spatially Resolved Plasma Spectroscopy in Pulsed Laser Deposition of Ultra-Thin Boron Nitride Films (Postprint)

DTIC Science & Technology

2015-04-24

AFRL-RX-WP-JA-2016-0196 TEMPORALLY AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE...AND SPATIALLY RESOLVED PLASMA SPECTROSCOPY IN PULSED LASER DEPOSITION OF ULTRA-THIN BORON NITRIDE FILMS (POSTPRINT) 5a. CONTRACT NUMBER FA8650...distributions within a PVD plasma plume ablated from a boron nitride (BN) target by a KrF laser at different pressures of nitrogen gas were investigated

Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

PubMed

Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

2018-02-01

As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

Ultrathin Carbon Film Protected Silver Nanostructures for Surface-Enhanced Raman Scattering.

PubMed

Peng, Yinshan; Zheng, Xianliang; Tian, Hongwei; Cui, Xiaoqiang; Chen, Hong; Zheng, Weitao

2016-06-23

In this article, ultrathin carbon film protected silver substrate (Ag/C) was prepared via a plasma-enhanced chemical vapor deposition (PECVD) method. The morphological evolution of silver nanostructures underneath, as well as the surface-enhanced Raman scattering (SERS) activity of Ag/C hybrid can be tuned by controlling the deposition time. The stability and reproducibility of the as-prepared hybrid were also studied. © The Author(s) 2016.

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation

NASA Astrophysics Data System (ADS)

Zou, Jianxiong; Liu, Bo; Lin, Liwei; Lu, Yuanfu; Dong, Yuming; Jiao, Guohua; Ma, Fei; Li, Qiran

2018-01-01

Ultrathin graded ZrNx self-assembled diffusion barriers with controllable stoichiometry was prepared in Cu/p-SiOC:H interfaces by plasma immersion ion implantation (PIII) with dynamic regulation of implantation fluence. The fundamental relationship between the implantation fluence of N+ and the stoichiometry and thereby the electrical properties of the ZrNx barrier was established. The optimized fluence of a graded ZrN thin film with gradually decreased Zr valence was obtained with the best electrical performance as well. The Cu/p-SiOC:H integration is thermally stable up to 500 °C due to the synergistic effect of Cu3Ge and ZrNx layers. Accordingly, the PIII process was verified in a 100-nm-thick Cu dual-damascene interconnect, in which the ZrNx diffusion barrier of 1 nm thick was successfully self-assembled on the sidewall without barrier layer on the via bottom. In this case, the via resistance was reduced by approximately 50% in comparison with Ta/TaN barrier. Considering the results in this study, ultrathin ZrNx conformal diffusion barrier can be adopted in the sub-14 nm technology node.

Effect of interleaved Si layer on the magnetotransport and semiconducting properties of n-Si/Fe Schottky junctions

NASA Astrophysics Data System (ADS)

Das, Sudhansu Sekhar; Kumar, M. Senthil

2017-12-01

Heterostructure films of the form n-Si/Si(tSi)/Fe(800 Å) were prepared by DC magnetron sputtering. In these films, the Si and Fe (800 Å) films were deposited onto n-Si(100) substrates. Substrates with different doping concentration ND were used. The thickness tSi of the interleaved Si layer is varied. For tSi = 0, the heterostructures form n-Si/Fe Schottky junctions. Structural studies on the samples as performed through XRD indicate the polycrystalline nature of the films. The magnetization data showed that the samples have in-plane easy axis of magnetization. The coercivity of the samples is of the order of 90 Oe. The I-V measurements on the samples showed nonlinear behavior. The diode ideality factor η = 2.6 is observed for the junction with ND = 1018 cm-3. The leakage current I0 increases with the increase of ND. Magnetic field has less effect on the electrical properties of the junctions. A positive magnetoresistance in the range 1 - 10 % was observed for the Si/Fe Schottky junctions in the presence of magnetic field of strength 2 T. The origin of the MR is analyzed using a model where the ratio of the currents across the junctions with and without the applied magnetic field, IH=2T/IH=0 is studied as a function of the bias voltage Vbias. The ratio IH=2T/IH=0 shows a decreasing trend with the Vbias, suggesting that the contribution to the MR in our n-Si/Fe Schottky junctions due to the spin dependent scattering is very less as compared to that due to the suppression of the impact ionization process.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Growth of highly strained CeO 2 ultrathin films

DOE PAGES

Shi, Yezhou; Lee, Sang Chul; Monti, Matteo; ...

2016-11-07

Large biaxial strain is a promising route to tune the functionalities of oxide thin films. However, large strain is often not fully realized due to the formation of misfit dislocations at the film/substrate interface. In this work, we examine the growth of strained ceria (CeO 2) thin films on (001)-oriented single crystal yttria-stabilized zirconia (YSZ) via pulsed-laser deposition. By varying the film thickness systematically between 1 and 430 nm, we demonstrate that ultrathin ceria films are coherently strained to the YSZ substrate for thicknesses up to 2.7 nm, despite the large lattice mismatch (~5%). The coherency is confirmed by bothmore » X-ray diffraction and high-resolution transmission electron microscopy. This thickness is several times greater than the predicted equilibrium critical thickness. Partial strain relaxation is achieved by forming semirelaxed surface islands rather than by directly nucleating dislocations. In situ reflective high-energy electron diffraction during growth confirms the transition from 2-D (layer-by-layer) to 3-D (island) at a film thickness of ~1 nm, which is further supported by atomic force microscopy. We propose that dislocations likely nucleate near the surface islands and glide to the film/substrate interface, as evidenced by the presence of 60° dislocations. Finally, an improved understanding of growing oxide thin films with a large misfit lays the foundation to systematically explore the impact of strain and dislocations on properties such as ionic transport and redox chemistry.« less

Copper diffusion in Ti Si N layers formed by inductively coupled plasma implantation

NASA Astrophysics Data System (ADS)

Ee, Y. C.; Chen, Z.; Law, S. B.; Xu, S.; Yakovlev, N. L.; Lai, M. Y.

2006-11-01

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.

Structural and optical characterization of pure Si-rich nitride thin films

NASA Astrophysics Data System (ADS)

Debieu, Olivier; Nalini, Ramesh Pratibha; Cardin, Julien; Portier, Xavier; Perrière, Jacques; Gourbilleau, Fabrice

2013-01-01

The specific dependence of the Si content on the structural and optical properties of O- and H-free Si-rich nitride (SiN x>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between the composition and the refractive index was found. In the absence of Si-H, N-H, and Si-O vibration modes in the FTIR spectra, the transverse and longitudinal optical (TO-LO) Si-N stretching pair modes could be unambiguously identified using the Berreman effect. With increasing Si content, the LO and the TO bands shifted to lower wavenumbers, and the LO band intensity dropped suggesting that the films became more disordered. Besides, the LO and the TO bands shifted to higher wavenumbers with increasing annealing temperature which may result from the phase separation between Si nanoparticles (Si-np) and the host medium. Indeed, XRD and Raman measurements showed that crystalline Si-np formed upon 1100°C annealing but only for SiN x<0.8. Besides, quantum confinement effects on the Raman peaks of crystalline Si-np, which were observed by HRTEM, were evidenced for Si-np average sizes between 3 and 6 nm. A contrario, visible photoluminescence (PL) was only observed for SiN x>0.9, demonstrating that this PL is not originating from confined states in crystalline Si-np. As an additional proof, the PL was quenched while crystalline Si-np could be formed by laser annealing. Besides, the PL cannot be explained neither by defect states in the bandgap nor by tail to tail recombination. The PL properties of SiN x>0.9 could be then due to a size effect of Si-np but having an amorphous phase.

Highly conducting and wide band gap phosphorous doped nc-Si–QD/a-SiC films as n-type window layers for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kar, Debjit; Das, Debajyoti, E-mail: erdd@iacs.res.in

2016-05-23

Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH{sub 4} + CH{sub 4})-plasma with PH{sub 3} as the doping gas. The effect of PH{sub 3} flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si–QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10{sup −2} S cm{sup −1}) are obtained, which could be appropriately used as n-type window layers for nc-Si solarmore » cells in n-i-p configuration.« less

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

NASA Astrophysics Data System (ADS)

Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

2015-01-01

Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

Confined Transformation Derived Ultrathin Titanate Nanosheets/ Graphene Films for Excellent Na/K Ion Storage.

PubMed

Zeng, Cheng; Xie, Fangxi; Yang, Xianfeng; Jaroniec, Mietek; Zhang, Lei; Qiao, Shizhang

2018-05-02

Confined transformation of assembled two-dimensional MXene (titanium carbide) and reduced graphene oxide (rGO) nanosheets was employed to prepare the free-standing films of the integrated ultrathin sodium titanate (NTO)/potassium titanate (KTO) nanosheets sandwiched between graphene layers. The ultrathin Ti-based nanosheets reduce the diffusion distance while rGO layers enhance conductivity. Incorporation of graphene into the titanate films produced efficient binder-free anodes for ion storage. The resulting NTO/rGO electrode for sodium ion batteries exhibited an excellent rate performance and long cycling stability characterized by reversible capacity of 72 mA h g-1 at 5 A g-1 after 10000 cycles. Moreover, flexible KTO/rGO electrode for potassium ion batteries maintained a reversible capacity of 75 mA h g-1 after 700 cycles at 2 A g-1. These results demonstrate the superiority of the unique sandwich-type electrodes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Restoring the magnetism of ultrathin LaMn O3 films by surface symmetry engineering

NASA Astrophysics Data System (ADS)

Peng, J. J.; Song, C.; Li, F.; Gu, Y. D.; Wang, G. Y.; Pan, F.

2016-12-01

The frustration of magnetization and conductivity properties of ultrathin manganite is detrimental to their device performance, preventing their scaling down process. Here we demonstrate that the magnetism of ultrathin LaMn O3 films can be restored by a SrTi O3 capping layer, which engineers the surface from a symmetry breaking induced out-of-plane orbital occupancy to the recovered in-plane orbital occupancy. The stabilized in-plane orbital occupancy would strengthen the intralayer double exchange and thus recovers the robust magnetism. This method is proved to be effective for films as thin as 2 unit cells, greatly shrinking the critical thickness of 6 unit cells for ferromagnetic LaMn O3 as demonstrated previously [Wang et al., Science 349, 716 (2015), 10.1126/science.aaa5198]. The achievement made in this work opens up new perspectives to an active control of surface states and thereby tailors the surface functional properties of transition metal oxides.

Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film

NASA Astrophysics Data System (ADS)

Hijikata, Hayato; Kozawa, Takahiro; Tagawa, Seiichi; Takei, Satoshi

2009-06-01

A bottom extreme-ultraviolet-sensitive coating (BESC) for evaluation of the absorption coefficients of ultrathin films such as extreme ultraviolet (EUV) resists was developed. This coating consists of a polymer, crosslinker, acid generator, and acid-responsive chromic dye and is formed by a conventional spin-coating method. By heating the film after spin-coating, a crosslinking reaction is induced and the coating becomes insoluble. A typical resist solution can be spin-coated on a substrate covered with the coating film. The evaluation of the linear absorption coefficients of polymer films was demonstrated by measuring the EUV absorption of BESC substrates on which various polymers were spin-coated.

Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles.

PubMed

Sun, Hui; Wu, Hsuan-Chung; Chen, Sheng-Chi; Ma Lee, Che-Wei; Wang, Xin

2017-12-01

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investigated. The results show that all the NiSi/Si films and AlSi/Si films possess higher absorption ability compared to a pure a-Si film (60 nm). After annealing from 400 to 600 °C under vacuum for 1 h, the Si layer remains amorphous in both NiSi/Si films and AlSi/Si films, while the NiSi layer crystallizes into NiSi 2 phase, whereas Al atoms diffuse through the whole film during the annealing process. Consequently, with increasing the annealing temperature, the optical absorption of NiSi/Si films increases, while that of AlSi/Si films obviously degrades.

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

1999-01-01

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Trends in the thermodynamic stability of ultrathin supported oxide films

DOE PAGES

Plessow, Philipp N.; Bajdich, Michal; Greene, Joshua; ...

2016-05-05

The formation of thin oxide films on metal supports is an important phenomenon, especially in the context of strong metal support interaction (SMSI). Computational predictions of the stability of these films are hampered by their structural complexity and a varying lattice mismatch with different supports. In this study, we report a large combination of supports and ultrathin oxide films studied with density functional theory (DFT). Trends in stability are investigated through a descriptor-based analysis. Since the studied films are bound to the support exclusively through metal–metal interaction, the adsorption energy of the oxide-constituting metal atom can be expected to bemore » a reasonable descriptor for the stability of the overlayers. If the same supercell is used for all supports, the overlayers experience different amounts of stress. Using supercells with small lattice mismatch for each system leads to significantly improved scaling relations for the stability of the overlayers. Finally, this approach works well for the studied systems and therefore allows the descriptor-based exploration of the thermodynamic stability of supported thin oxide layers.« less

New possibilities for tuning ultrathin cobalt film magnetic properties by a noble metal overlayer.

PubMed

Kisielewski, M; Maziewski, A; Tekielak, M; Wawro, A; Baczewski, L T

2002-08-19

Complementary multiscale magneto-optical studies based on the polar Kerr effect are carried out on an ultrathin cobalt wedge covered with a silver wedge and subsequently with the Au thick layer. A few monolayers of Ag are found to have a substantial effect on magnetic anisotropy, the coercivity field, and Kerr rotation. The silver overlayer thickness-driven magnetic reorientation from easy axis to easy plane generates a new type of 90 degrees magnetic wall for cobalt thicknesses between 1.3 and 1.8 nm. The tuning of the wall width in a wide range is possible. Tailoring of the overlayer structure can be used for ultrathin film magnetic patterning.

Local Schottky contacts of embedded Ag nanoparticles in Al2O3/SiNx:H stacks on Si: a design to enhance field effect passivation of Si junctions.

PubMed

Ibrahim Elmi, Omar; Cristini-Robbe, Odile; Chen, Minyu; Wei, Bin; Bernard, Rémy; Okada, Etienne; Yarekha, Dmitri A; Ouendi, Saliha; Portier, Xavier; Gourbilleau, Fabrice; Xu, Tao; Stievenard, Didier

2018-04-26

This paper describes an original design leading to the field effect passivation of Si n+-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al2O3/SiNx:H stacks on the top of implanted Si n+-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag nanoparticles. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts. © 2018 IOP Publishing Ltd.

Materials Study of NbN and Ta x N Thin Films for SNS Josephson Junctions

DOE PAGES

Missert, Nancy; Brunke, Lyle; Henry, Michael D.; ...

2017-02-15

We investigated properties of NbN and Ta xN thin films grown at ambient temperatures on SiO 2/Si substrates by reactive-pulsed laser deposition and reactive magnetron sputtering (MS) as a function of N 2 gas flow. Both techniques produced films with smooth surfaces, where the surface roughness did not depend on the N 2 gas flow during growth. High crystalline quality, (111) oriented NbN films with T c up to 11 K were produced by both techniques for N contents near 50%. The low temperature transport properties of the Ta xN films depended upon both the N 2 partial pressure usedmore » during growth and the film thickness. Furthermore, the root mean square surface roughness of Ta xN films grown by MS increased as the film thickness decreased down to 10 nm.« less

Chemical vapor deposition of W-Si-N and W-B-N

DOEpatents

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Tunable broadband near-infrared absorber based on ultrathin phase-change material

NASA Astrophysics Data System (ADS)

Hu, Er-Tao; Gu, Tong; Guo, Shuai; Zang, Kai-Yan; Tu, Hua-Tian; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Wang, Song-You; Zhang, Rong-Jun; Lee, Young-Pak; Chen, Liang-Yao

2017-11-01

In this work, a tunable broadband near-infrared light absorber was designed and fabricated with a simple and lithography free approach by introducing an ultrathin phase-change material Ge2Sb2Te5 (GST) layer into the metal-dielectric multilayered film structure with the structure parameters as that: SiO2 (72.7 nm)/Ge2Sb2Te5 (6.0 nm)/SiO2 (70.2 nm)/Cu (>100.0 nm). The film structure exhibits a modulation depth of ∼72.6% and an extinction ratio of ∼8.8 dB at the wavelength of 1410 nm. The high light absorption (95%) of the proposed film structure at the wavelength of 450 nm in both of the amorphous and crystalline phase of GST, indicates that the intensity of the reflectance in the infrared region can be rapidly tuned by the blue laser pulses. The proposed planar layered film structure with layer thickness as the only controllable parameter and large reflectivity tuning range shows the potential for practical applications in near-infrared light modulation and absorption.

How Do Organic Vapors Swell Ultrathin Films of Polymer of Intrinsic Microporosity PIM-1?

PubMed

Ogieglo, Wojciech; Rahimi, Khosorov; Rauer, Sebastian Bernhard; Ghanem, Bader; Ma, Xiaohua; Pinnau, Ingo; Wessling, Matthias

2017-07-27

Dynamic sorption of ethanol and toluene vapor into ultrathin supported films of polymer of intrinsic microporosity PIM-1 down to a thickness of 6 nm are studied with a combination of in situ spectroscopic ellipsometry and in situ X-ray reflectivity. Both ethanol and toluene significantly swell the PIM-1 matrix and, at the same time, induce persistent structural relaxations of the frozen-in glassy PIM-1 morphology. For ethanol below 20 nm, three effects were identified. First, the swelling magnitude at high vapor pressures is reduced by about 30% as compared to that of thicker films. Second, at low penetrant activities (below 0.3p/p 0 ), films below 20 nm are able to absorb slightly more penetrant as compared with thicker films despite a similar swelling magnitude. Third, for the ultrathin films, the onset of the dynamic penetrant-induced glass transition P g has been found to shift to higher values, indicating higher resistance to plasticization. All of these effects are consistent with a view where immobilization of the superglassy PIM-1 at the substrate surface leads to an arrested, even more rigid, and plasticization-resistant, yet still very open, microporous structure. PIM-1 in contact with the larger and more condensable toluene shows very complex, heterogeneous swelling dynamics, and two distinct penetrant-induced relaxation phenomena, probably associated with the film outer surface and the bulk, are detected. Following the direction of the penetrant's diffusion, the surface seems to plasticize earlier than the bulk, and the two relaxations remain well separated down to 6 nm film thickness, where they remarkably merge to form just a single relaxation.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

SERS Taper-Fiber Nanoprobe Modified by Gold Nanoparticles Wrapped with Ultrathin Alumina Film by Atomic Layer Deposition

PubMed Central

Xu, Wenjie; Chen, Zhenyi; Chen, Na; Zhang, Heng; Liu, Shupeng; Hu, Xinmao; Wen, Jianxiang; Wang, Tingyun

2017-01-01

A taper-fiber SERS nanoprobe modified by gold nanoparticles (Au-NPs) with ultrathin alumina layers was fabricated and its ability to perform remote Raman detection was demonstrated. The taper-fiber nanoprobe (TFNP) with a nanoscale tip size under 80 nm was made by heated pulling combined with the chemical etching method. The Au-NPs were deposited on the TFNP surface with the electrostatic self-assembly technology, and then the TFNP was wrapped with ultrathin alumina layers by the atomic layer deposition (ALD) technique. The results told us that with the increasing thickness of the alumina film, the Raman signals decreased. With approximately 1 nm alumina film, the remote detection limit for R6G aqueous solution reached 10−6 mol/L. PMID:28245618

Electronic transport properties of nano-scale Si films: an ab initio study

NASA Astrophysics Data System (ADS)

Maassen, Jesse; Ke, Youqi; Zahid, Ferdows; Guo, Hong

2010-03-01

Using a recently developed first principles transport package, we study the electronic transport properties of Si films contacted to heavily doped n-type Si leads. The quantum transport analysis is carried out using density functional theory (DFT) combined with nonequilibrium Green's functions (NEGF). This particular combination of NEGF-DFT allows the investigation of Si films with thicknesses in the range of a few nanometers and lengths up to tens of nanometers. We calculate the conductance, the momentum resolved transmission, the potential profile and the screening length as a function of length, thickness, orientation and surface structure. Moreover, we compare the properties of Si films with and without a top surface passivation by hydrogen.

Structural and electrical investigations of a-Si:H(i) and a-Si:H(n+) stacked layers for improving the interface and passivation qualities

NASA Astrophysics Data System (ADS)

Hsieh, Yu-Lin; Lee, Chien-Chieh; Lu, Chia-Cheng; Fuh, Yiin-Kuen; Chang, Jenq-Yang; Lee, Ju-Yi; Li, Tomi T.

2017-07-01

A symmetrically stacked structure [(a-Si:H(n+)/a-Si:H(i)/CZ wafer (n)/a-Si:H(i)/a-Si:H(n+)] was used to optimize the growth process conditions of the n-type hydrogenated amorphous silicon [a-Si:H(n+)] thin films. Here a-Si:H(n+) film was used as back surface field (BSF) layer for the silicon heterojunction solar cell and all stacked films were prepared by conventional radio-frequency plasma-enhanced chemical vapor deposition. The characterizations of the effective carrier lifetime (τeff), electrical and structural properties, as well as correlation with the hydrogen dilution ratio (R=H2/SiH4) were systematically discussed with the emphasis on the effectiveness of the passivation layer using the lifetime tester, spectroscopic ellipsometry, and hall measurement. High quality of a stacked BSF layer (intrinsic/n-type a-Si:H layer) with effective carrier lifetime of 1.8 ms can be consistently obtained. This improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates

NASA Astrophysics Data System (ADS)

Padavala, Balabalaji

The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, AlN

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates.

PubMed

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Runchun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2017-11-08

Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 10 7  cm -2 . Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

Ultrathin Au film on polymer surface for surface plasmon polariton waveguide application

NASA Astrophysics Data System (ADS)

Liu, Tong; Ji, Lanting; He, Guobing; Sun, Xiaoqiang; Wang, Fei; Zhang, Daming

2017-11-01

Formation of laterally continuous ultrathin gold films on polymer substrates is a technological challenge. In this work, the vacuum thermal evaporation method is adopted to form continuous Au films in the thickness range of 7-17 nm on polymers of Poly(methyl-methacrylate-glycidly-methacrylate) and SU-8 film surface without using the adhesion or metallic seeding layers. Absorption spectrum, scanning electron microscope and atomic force microscope images are used to characterize the Au film thickness, roughness and optical loss. The result shows that molecular-scale structure, surface energy and electronegativity have impacts on the Au film morphology on polymers. Wet chemical etching is used to fabricate 7-nm thick Au stripes embedded in polymer claddings. These long-range surface plasmon polariton waveguides demonstrate the favorable morphological configurations and cross-sectional states. Through the end-fire excitation method, propagation losses of 6-μm wide Au stripes are compared to theoretical values and analyzed from practical film status. The smooth, patternable gold films on polymer provide potential applications to plasmonic waveguides, biosensing, metamaterials and optical antennas.

An XPS study on the chemical bond structure at the interface between SiO{sub x}N{sub y} and N doped polyethylene terephthalate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding Wanyu; Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024; Li Li

2013-03-14

The super-thin silicon oxynitride (SiO{sub x}N{sub y}) films were deposited onto the N doped polyethylene terephthalate (PET) surface. Varying the N doping parameters, the different chemical bond structures were obtained at the interface between the SiO{sub x}N{sub y} film and the PET surface. X-ray photoelectron spectra results showed that at the initial stage of SiO{sub x}N{sub y} film growth, the C=N bonds could be broken and C-N-Si crosslink bonds could be formed at the interface of SiO{sub x}N{sub y}/PET, which C=N bonds could be formed onto the PET surface during the N doping process. At these positions, the SiO{sub x}N{submore » y} film could be crosslinked well onto the PET surface. Meanwhile, the doped N could crosslink the [SiO{sub 4}] and [SiN{sub 4}] tetrahedrons, which could easily form the dense layer structure at the initial stage of SiO{sub x}N{sub y} film growth, instead of the ring and/or chain structures of [SiO{sub 4}] tetrahedrons crosslinked by O. Finally, from the point of applying SiO{sub x}N{sub y}/PET complex as the substrate, the present work reveals a simple way to crosslink them, as well as the crosslink model and physicochemical mechanism happened at the interface of complex.« less

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

PubMed

Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

2016-09-15

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (<20nm thick) were mainly investigated by atomic force microscopy. Surface chemical analysis of the ultrathin films annealed for different times were performed using X-ray photoelectron spectroscopy and contact angle measurement. With the annealing of acetone vapor, dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

Thermal stability, adhesion and electrical studies on (Ti,Zr)N x thin films as low resistive diffusion barriers between Cu and Si

NASA Astrophysics Data System (ADS)

Huang, Cheng-Lin; Lai, Chih-Huang; Tsai, Po-Hao; Kuo, Yu-Lin; Lin, Jing-Cheng; Lee, Chiapyng

2014-05-01

In this study, we investigated the thermal stability, wettability, adhesion and reliability of (Ti,Zr)N x films used as the diffusion barrier between Cu and Si. (Ti,Zr)N x films were prepared by DC reactive magnetron sputtering from a Ti-5 at. % Zr alloy target in N2/Ar gas mixtures. A minimum film resistivity of 59.3 µω cm was obtained at an N2/Ar flow ratio of 2.75, which corresponds to the near stoichiometric composition (N/(Ti,Zr) ratio ˜0.95). The sheet resistance of Cu/(Ti,Zr)N0.95/Si was not significantly increased until annealing above 750°C, indicating good thermal stability. On the other hand, the adhesion energy between Cu and the (Ti,Zr)Nx film was reduced as the N/Ti ratio was increased. To obtain reliable performance on stress-induced-voiding (SIV) and electromigration (EM) tests, we proposed to use (Ti,Zr)/(Ti,Zr)N x /(Ti,Zr) tri-layers. We suggest that the interfacial adhesion between barrier and Cu plays an important role in reliability. The proposed tri-layer structure may be a promising candidate for a barrier, as it exhibits excellent reliability without increasing resistance.

Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

NASA Astrophysics Data System (ADS)

Otsuka, Shintaro; Mori, Takahiro; Morita, Yukinori; Uchida, Noriyuki; Liu, Yongxun; O'uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku; Matsukawa, Takashi

2017-04-01

We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal annealing (RTA). After RTA treatment at 720 °C, we find the heteroepitaxial Ge films to have smooth surfaces with a roughness root mean square value of 0.54 nm. Raman measurement reveals that the 720 °C RTA improves the crystallinity of Ge films while maintaining abrupt Ge/Si interfaces. Cross-sectional transmission electron microscopy confirms that the 720 °C RTA step effectively reduces stacking faults and dislocations in the Ge films. The Richardson plot of the TaN/Ge/n-Si diode indicates a Schottky barrier height (SBH) of 0.33 V, which is close to the height of 0.37 V measured from the capacitance-voltage measurement. These values are reasonable compared with the reported SBH of the TaN/bulk Ge Schottky barrier diode, indicating that the method involving heated sputtering and subsequent RTA provides adequate thin Ge films for Ge/Si heterostructures.

Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

NASA Astrophysics Data System (ADS)

Liu, Hongfei; Yang, Ren Bin; Yang, Weifeng; Jin, Yunjiang; Lee, Coryl J. J.

2018-05-01

Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in air at Tann = 550-750 °C for 15 min. Scanning-electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been employed to evaluate the morphological and elemental properties as well as their evolutions upon annealing of the thin films. They revealed an interfacial SiOx layer in between the MoO3 layer and the Si substrate; this SiOx layer converted into SiO2 during the annealing; and the equivalent thickness of the MoO3 (SiO2) layer decreased (increased) with the increase in Tann. Particles with diameters smaller than 50 nm emerged at Tann = 550 °C and their sizes (density) were reduced (increased) by increasing Tann to 650 °C. A further increase of Tann to 750 °C resulted in telephone-cord-like MoO3 structures, initiated from isolated particles on the surface. These observations have been discussed and interpreted based on temperature-dependent atomic interdiffusions, surface evaporations, and/or melting of MoO3, which shed new light on ALD MoO3 towards its electronic applications.

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

NASA Astrophysics Data System (ADS)

Giaccherini, Andrea; Russo, Francesca; Carlà, Francesco; Guerri, Annalisa; Picca, Rosaria Anna; Cioffi, Nicola; Cinotti, Serena; Montegrossi, Giordano; Passaponti, Maurizio; Di Benedetto, Francesco; Felici, Roberto; Innocenti, Massimo

2018-02-01

Electrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds CuxZnyS grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of CuxZnyS by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu2S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase.

'One-component' ultrathin multilayer films based on poly(vinyl alcohol) as stabilizing coating for phenytoin-loaded liposomes.

PubMed

Zasada, Katarzyna; Łukasiewicz-Atanasov, Magdalena; Kłysik, Katarzyna; Lewandowska-Łańcucka, Joanna; Gzyl-Malcher, Barbara; Puciul-Malinowska, Agnieszka; Karewicz, Anna; Nowakowska, Maria

2015-11-01

Ultrathin "one-component" multilayer polymeric films for potential biomedical applications were designed based on polyvinyl alcohol,-a non-toxic, fully degradable synthetic polymer. Good uniformity of the obtained film and adequate adsorption properties of the polymeric layers were achieved by functional modification of the polymer, which involved synthesis of cationic and anionic derivatives. Synthesized polymers were characterized by FTIR, NMR spectroscopy, dynamic light scattering measurements and elemental analysis. The layer by layer assembly technique was used to build up a multilayer film and this process was followed using UV-Vis spectroscopy and ellipsometry. The morphology and thickness of the obtained multilayered film material was evaluated by atomic force microscopy (AFM). Preliminary studies on the application of the obtained multilayer film for coating of liposomal nanocarriers containing phenytoin, an antiarrhythmic drug, were performed. The coating effectively stabilizes liposomes and the effect increases with an increasing number of deposited layers until the polymeric film reaches the optimal thickness. The obtained release profiles suggest that bilayer-coated liposomes release phenytoin less rapidly than uncoated ones. The cytotoxicity studies performed for all obtained nanocarriers confirmed that none of them has negative effect on cell viability. All of the performed experiments suggest that liposomes coated with ultrathin film obtained from PVA derivatives can be attractive drug nanocarriers. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

PubMed

Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

2009-10-28

The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn

2014-11-15

Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowiremore » array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.« less

Stability of Polymer Ultrathin Films (<7 nm) Made by a Top-Down Approach.

PubMed

Bal, Jayanta Kumar; Beuvier, Thomas; Unni, Aparna Beena; Chavez Panduro, Elvia Anabela; Vignaud, Guillaume; Delorme, Nicolas; Chebil, Mohamed Souheib; Grohens, Yves; Gibaud, Alain

2015-08-25

In polymer physics, the dewetting of spin-coated polystyrene ultrathin films on silicon remains mysterious. By adopting a simple top-down method based on good solvent rinsing, we are able to prepare flat polystyrene films with a controlled thickness ranging from 1.3 to 7.0 nm. Their stability was scrutinized after a classical annealing procedure above the glass transition temperature. Films were found to be stable on oxide-free silicon irrespective of film thickness, while they were unstable (<2.9 nm) and metastable (>2.9 nm) on 2 nm oxide-covered silicon substrates. The Lifshitz-van der Waals intermolecular theory that predicts the domains of stability as a function of the film thickness and of the substrate nature is now fully reconciled with our experimental observations. We surmise that this reconciliation is due to the good solvent rinsing procedure that removes the residual stress and/or the density variation of the polystyrene films inhibiting thermodynamically the dewetting on oxide-free silicon.

Surface-potential undulation of Alq3 thin films prepared on ITO, Au, and n-Si.

PubMed

Ozasa, Kazunari; Ito, Hiromi; Maeda, Mizuo; Hara, Masahiko

2012-01-01

The surface potential (SP) morphology on thin films of tris(8-hydroxyquinolinato) aluminum (Alq3) was investigated with Kelvin probe force microscopy. Thin Alq3 films of 100 nm were prepared on ITO/glass substrates, Au/mica substrates, and n-Si substrates. Cloud-like morphologies of the SP undulation with 200-400 nm in lateral size were observed for all three types of the substrates. New larger peaks were observed in the cloud-like morphologies when the surfaces were exposed shortly to a light, while the SP average was reduced monotonically. The nonuniform distribution of charged traps and mobility was deduced from the SP undulation morphology and its photoexposure dependences.

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

NASA Astrophysics Data System (ADS)

Geenen, F. A.; Solano, E.; Jordan-Sweet, J.; Lavoie, C.; Mocuta, C.; Detavernier, C.

2018-05-01

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both "thin" (i.e., 9 nm) and "ultra-thin" (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.

Study of anisotropy, magnetization reversal and damping in ultrathin Co films on MgO (0 0 1) substrate

NASA Astrophysics Data System (ADS)

Mallik, Srijani; Bedanta, Subhankar

2018-01-01

Ultrathin Co films of 3 nm thickness have been prepared on MgO (0 0 1) substrate in presence or absence of substrate pre-annealing. Uniaxial anisotropy is induced in the samples due to the deposition under oblique angle of incidence. Along with the oblique deposition induced anisotropy, another uniaxial anisotropy contribution has been observed due to pre-annealing. However, no cubic anisotropy has been observed here as compared to the thicker films. Angle dependent ferromagnetic resonance (FMR) measurement confirms the presence of two anisotropies in the pre-annealed sample with ∼18° misalignment with each other. The two anisotropy constants were calculated from both superconducting quantum interference device (SQUID) magnetometry and FMR spectroscopy. The magnetization reversal is governed by nucleation dominated aftereffect followed by domain wall motion for the pre-annealed sample. Branched domains are observed for the sample prepared without pre-annealing which indicates grain disorientation of Co. However, in the thicker (25 nm) Co films ripple domains were observed in contrary to ultrathin (3 nm) films.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films.

PubMed

Nikitin, Timur; Khriachtchev, Leonid

2015-04-22

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si-SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ∼300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers.

PubMed

Cao, Dezhong; Xiao, Hongdi; Gao, Qingxue; Yang, Xiaokun; Luan, Caina; Mao, Hongzhi; Liu, Jianqiang; Liu, Xiangdong

2017-08-17

Herein, a lift-off mesoporous GaN-based thin film, which consisted of a strong phase-separated InGaN/GaN layer and an n-GaN layer, was fabricated via an electrochemical etching method in a hydrofluoric acid (HF) solution for the first time and then transferred onto quartz or n-Si substrates, acting as photoanodes during photoelectrochemical (PEC) water splitting in a 1 M NaCl aqueous solution. Compared to the as-grown GaN-based film, the transferred GaN-based thin films possess higher and blue-shifted light emission, presumably resulting from an increase in the surface area and stress relaxation in the InGaN/GaN layer embedded on the mesoporous n-GaN. The properties such as (i) high photoconversion efficiency, (ii) low turn-on voltage (-0.79 V versus Ag/AgCl), and (iii) outstanding stability enable the transferred films to have excellent PEC water splitting ability. Furthermore, as compared to the film transferred onto the quartz substrate, the film transferred onto the n-Si substrate exhibits higher photoconversion efficiency (2.99% at -0.10 V) due to holes (h + ) in the mesoporous n-GaN layer that originate from the n-Si substrate.

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

PubMed Central

Nikitin, Timur; Khriachtchev, Leonid

2015-01-01

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas. PMID:28347028

Aerosol-assisted chemical vapor deposition of ultra-thin CuOx films as hole transport material for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Zhixin; Chen, Shuqun; Li, Pingping; Li, Hongyi; Wu, Junshu; Hu, Peng; Wang, Jinshu

This paper reports on the fabrication of CuOx films to be used as hole transporting layer (HTL) in CH3NH3PbI3 perovskite solar cells (PSCs). Ultra-thin CuOx coatings were grown onto FTO substrates for the first time via aerosol-assisted chemical vapor deposition (AACVD) of copper acetylacetonate in methanol. After incorporating into the PSCs prepared at ambient air, a highest power conversion efficiency (PCE) of 8.26% with HTL and of 3.34% without HTL were achieved. Our work represents an important step in the development of low-cost CVD technique for fabricating ultra-thin metal oxide functional layers in thin film photovoltaics.

Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tóvári, E.; Csontos, M., E-mail: csontos@dept.phy.bme.hu; Kriváchy, T.

2014-09-22

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

Two-dimensional Si(x)Ge(1-x) films with variable composition made via multilayer colloidal template-guided ionic liquid electrodeposition.

PubMed

Xin, Wuhong; Zhao, Jiupeng; Ge, Dengteng; Ding, Yanbo; Li, Yao; Endres, Frank

2013-02-21

The binary alloy system Si(x)Ge(1-x) provides a continuous series of materials with gradually varying properties. In this paper, we report on a fundamental basis a method to make large-area macroporous Si(x)Ge(1-x) films with variable Ge content by electrodeposition in an ionic liquid, with SiCl(4) and GeCl(4) as precursors. The chemical composition of the products can be modified by changing the molar ratio of the precursors. Periodical macroporous Si(x)Ge(1-x) was made by a multilayer polystyrene (PS) template assembled as face-centered cubic lattice. Two-dimensional (2-D) Si(x)Ge(1-x) bowl-like and fishing-net structures can be obtained by applying different deposition temperatures. The results highlight the potential applications, including photonic bandgap and battery materials, as well as ultra-thin gratings, due to the effect of modification of light and improved tunability of composition, although Si(x)Ge(1-x) made by our method is sensitive to oxidation by air.

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

PubMed

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-01-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Growth and characterization of cubic SiC single-crystal films on Si

NASA Astrophysics Data System (ADS)

Powell, J. Anthony; Matus, L. G.; Kuczmarski, Maria A.

1987-06-01

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Laser ablation for membrane processing of AlGaN/GaN- and micro structured ferroelectric thin film MEMS and SiC pressure sensors for extreme conditions

NASA Astrophysics Data System (ADS)

Zehetner, J.; Vanko, G.; Dzuba, J.; Ryger, I.; Lalinsky, T.; Benkler, Manuel; Lucki, Michal

2015-05-01

AlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. In addition we investigate ferroelectric thin films for integration into micro-electro-mechanical-systems (MEMS). Creation of appropriate diaphragms and/or cantilevers out of SiC is necessary for further improvement of sensing properties of such MEMS sensors. For example sensitivity of the AlGaN/GaN based MEMS pressure sensor can be modified by membrane thickness. We demonstrated that a 4H-SiC 80μm thick diaphragms can be fabricated much faster with laser ablation than by electrochemical, photochemical or reactive ion etching (RIE). We were able to verify the feasibility of this process by fabrication of micromechanical membrane structures also in bulk 3C-SiC, borosilicate glass, sapphire and Al2O3 ceramic substrates by femtosecond laser (520nm) ablation. On a 350μm thick 4H-SiC substrate we produced an array of 275μm deep and 1000μm to 3000μm of diameter blind holes without damaging the 2μm AlN layer at the back side. In addition we investigated ferroelectric thin films as they can be deposited and micro-patterned by a direct UV-lithography method after the ablation process for a specific membrane design. The risk to harm or damage the function of thin films was eliminated by that means. Some defects in the ablated membranes are also affected by the polarisation of the laser light. Ripple structures oriented perpendicular to the laser polarisation promote creation of pin holes which would perforate a thin membrane. We developed an ablation technique strongly inhibiting formation of ripples and pin poles.

Diffusion of phonons through (along and across) the ultrathin crystalline films

NASA Astrophysics Data System (ADS)

Šetrajčić, J. P.; Jaćimovski, S. K.; Vučenović, S. M.

2017-11-01

Instead of usual approach, applying displacement-displacement Green's functions, the momentum-momentum Green's functions will be used to calculate the diffusion tensor. With this type of Green's function we have calculated and analyzed dispersion law in film-structures. A small number of phonon energy levels along the direction of boundary surfaces joint of the film are discrete-ones and in this case standing waves could occur. This is consequence of quantum size effects. These Green's functions enter into Kubo's formula defining diffusion properties of the system and possible heat transfer direction through observed structures. Calculation of the diffusion tensor for phonons in film-structure requires solving of the system of difference equations. Boundary conditions are included into mentioned system through the Hamiltonian of the film-structure. It has been shown that the diagonal elements of the diffusion tensor express discrete behavior of the dispersion law of elementary excitations. More important result is-that they are temperature independent and that their values are much higher comparing with bulk structures. This result favors better heat conduction of the film, but in direction which is perpendicular to boundary film surface. In the same time this significantly favors appearance 2D superconducting surfaces inside the ultra-thin crystal structure, which are parallel to the boundary surface.

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

NASA Astrophysics Data System (ADS)

Furuta, Mamoru; Kamada, Yudai; Hiramatsu, Takahiro; Li, Chaoyang; Kimura, Mutsumi; Fujita, Shizuo; Hirao, Takashi

2011-03-01

The positive bias instabilities of the zinc oxide thin-film transistors (ZnO TFTs) with a SiOx/SiNx-stacked gate insulator have been investigated. The film quality of a gate insulator of SiOx, which forms an interface with the ZnO channel, was varied by changing the gas mixture ratio of SiH4/N2O/N2 during plasma-enhanced chemical vapor deposition. The positive bias stress endurance of ZnO TFT strongly depended on the deposition condition of the SiOx gate insulator. From the relaxations of the transfer curve shift after imposition of positive bias stress, transfer curves could not be recovered completely without any thermal annealing. A charge trapping in a gate insulator rather than that in bulk ZnO and its interface with a gate insulator is a dominant instability mechanism of ZnO TFTs under positive bias stress.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Structural transformation of Si-rich SiNx film on Si via swift heavy ions irradiation

NASA Astrophysics Data System (ADS)

Murzalinov, D.; Akilbekov, A.; Dauletbekova, A.; Vlasukova, L.; Makhavikov, M.; Zdorovets, M.

2018-03-01

The effects of 200 MeV-Xe+ irradiation with fluencies of (109–1014) cm‑2 on the phase-structural transformation of Si-rich SiNx film deposited on Si substrate by low-pressure chemical vapor deposition have been reported. It has been shown from Raman scattering data that the swift heavy ions irradiation results in the dissolution of amorphous Si nanoclusters in nitride matrix. It has been shown, too, that the swift heavy ion irradiation leads to quenching a visual photoluminescence from nitride films.

Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams

NASA Astrophysics Data System (ADS)

Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Kawano, T.; Ohji, Y.

1994-04-01

The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2 (166 nm)/Si specimens fabricated by thermal oxidation. From the measurements, it was found that about 90% of positrons implanted into the SiO2 film annihilate from positronium (Ps) states. This fact was due to the trapping of positrons by open-space defects and a resultant enhanced formation of Ps in such regions. For the SiO2 film grown at 650 °C, the lifetime of ortho-Ps was found to be shorter than that in the film grown at 1000 °C. This result suggests that the volume of open-space defects in the SiO2 film decreased with decreasing the growth rate of the SiO2 film.

Structure of periodic crystals and quasicrystals in ultrathin films of Ba-Ti-O

DOE PAGES

Cockayne, Eric; Mihalkovič, Marek; Henley, Christopher L.

2016-01-07

Here, we model the remarkable thin-film Ba-Ti-O structures formed by heat treatment of an initial perovskite BaTiO 3 thin film on a Pt(111) surface. All structures contain a rumpled Ti-O network with all Ti threefold coordinated with O, and with Ba occupying the larger. mainly Ti 7O 7, pores. The quasicrystal structue is a simple decoration of three types of tiles: square, triangle and 30° rhombus, with edge lengths 6.85 Å, joined edge-to-edge in a quasicrystalline pattern; observed periodic crystals in ultrathin film Ba-Ti-O are built from these and other tiles. Simulated STM images reproduce the patterns seen experimentally, andmore » identify the bright protrusions as Ba atoms. The models are consistent with all experimental observations.« less

Ag films deposited on Si and Ti: How the film-substrate interaction influences the nanoscale film morphology

NASA Astrophysics Data System (ADS)

Ruffino, F.; Torrisi, V.

2017-11-01

Submicron-thick Ag films were sputter deposited, at room temperature, on Si, covered by the native SiO2 layer, and on Ti, covered by the native TiO2 layer, under normal and oblique deposition angle. The aim of this work was to study the morphological differences in the grown Ag films on the two substrates when fixed all the other deposition parameters. In fact, the surface diffusivity of the Ag adatoms is different on the two substrates (higher on the SiO2 surface) due to the different Ag-SiO2 and Ag-TiO2 atomic interactions. So, the effect of the adatoms surface diffusivity, as determined by the adatoms-substrate interaction, on the final film morphology was analyzed. To this end, microscopic analyses were used to study the morphology of the grown Ag films. Even if the homologous temperature prescribes that the Ag film grows on both substrates in the zone I described by the structure zone model some significant differences are observed on the basis of the supporting substrate. In the normal incidence condition, on the SiO2/Si surface a dense close-packed Ag film exhibiting a smooth surface is obtained, while on the TiO2/Ti surface a more columnar film morphology is formed. In the oblique incidence condition the columnar morphology for the Ag film occurs both on SiO2/Si and TiO2/Ti but a higher porous columnar film is obtained on TiO2/Ti due to the lower Ag diffusivity. These results indicate that the adatoms diffusivity on the substrate as determined by the adatom-surface interaction (in addition to the substrate temperature) strongly determines the final film nanostructure.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.